Light-emitting element and display device

Abstract

To provide a light-emitting element and a display device that can improve light-emitting characteristics.SOLUTION: According to the present disclosure, a plurality of first electrodes are provided on a substrate for each pixel. An insulating layer is provided on the substrate. An organic layer is provided on the first electrodes. A second electrode is disposed on the surface of the organic layer opposite to the first electrodes. The insulating layer includes, from the substrate side, a first insulating layer, a second insulating layer, and a third insulating layer. The first insulating layer covers at least a portion of a side surface of the first electrode. An edge of an opening of the third insulating layer protrudes inward beyond an edge of an opening of the second insulating layer. This protruding portion forms an overhang, and the third insulating layer has an overhang shape when viewed in cross section.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a light-emitting element and a display device. [Background technology]

[0002] In active OLED (Organic Light-Emitting Diode) panels that do not use pixel-specific coating, when low-resistance organic materials are used, problems of organic layer leakage, which is current leakage between pixels through the organic material, and device leakage in parts where the organic coating property is deteriorated, are known. When such leakage current occurs, when a specific pixel is turned on, current flows to adjacent pixels, causing unintended pixels to emit light. As a result, problems such as a decrease in color gamut, color shift, decrease in luminous efficiency, or insufficient contrast may occur.

[0003] As a countermeasure to this problem, a structure is known in which a pixel isolating insulating film is disposed so as to cut an organic material having low resistance between pixels, thereby isolating and isolating the pixels from each other. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2013-112694 A Summary of the Invention [Problem to be solved by the invention]

[0005] However, in the conventional technology in which an insulating film for isolating pixels is disposed, there is a risk that the coverage of the organic film, the cathode electrode film, and the protective film is deteriorated, resulting in deterioration of the light emitting characteristics.

[0006] In view of this, the present disclosure provides a light-emitting element and a display device capable of improving the light-emitting characteristics. [Means for solving the problem]

[0007] According to the present disclosure, a plurality of first electrodes are provided on a substrate for each pixel. An insulating layer is provided on the substrate. An organic layer is provided on the first electrodes. A second electrode is disposed on the surface of the organic layer opposite to the first electrodes. The insulating layer includes, from the substrate side, a first insulating layer, a second insulating layer, and a third insulating layer. The first insulating layer covers at least a portion of a side surface of the first electrode. An edge of an opening of the third insulating layer protrudes inward beyond an edge of an opening of the second insulating layer. This protruding portion forms an overhang, and the third insulating layer has an overhang shape when viewed in cross section. [Brief description of the drawings]

[0008] [Figure 1] 1 is a cross-sectional view of a light-emitting element according to a first embodiment. [Diagram 2] 1 is a diagram of one example of a light-emitting element according to a first embodiment. [Diagram 3] FIG. 2 is a cross-sectional view of a light-emitting element having a continuous CGL. [Figure 4] FIG. 13 is a diagram for explaining the influence of a leakage current in a CGL. [Diagram 5] 1 is a diagram illustrating an outline of a cross section of a pixel isolating insulating film according to a first modified example of the first embodiment. FIG. [Figure 6] FIG. 11 is a cross-sectional view of a pixel isolating insulating film according to Modification 2 of the first embodiment. [Figure 7] FIG. 11 is a cross-sectional view of a pixel isolating insulating film according to Modification 3 of the first embodiment. [Figure 8] FIG. 11 is a cross-sectional view of a pixel isolating insulating film according to a second embodiment. [Figure 9] FIG. 13 is a diagram illustrating an outline of a cross section of a pixel isolating insulating film according to a modified example of the second embodiment. [Figure 10] FIG. 11 is a cross-sectional view of a pixel isolating insulating film according to a third embodiment. [Figure 11] FIG. 13 is a cross-sectional view of a pixel isolating insulating film according to a fourth embodiment. [Figure 12] FIG. 13 is a cross-sectional view of a light-emitting device according to a fifth embodiment. [Figure 13] FIG. 13 is a cross-sectional view of a light-emitting device according to a sixth embodiment. [Figure 14] FIG. 13 is a cross-sectional view of a light-emitting device according to a seventh embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In the following embodiments, the same components are designated by the same reference numerals, and duplicated descriptions will be omitted.

[0010] (First embodiment) Active OLEDs are difficult to paint pixels separately due to their high resolution. For this reason, area deposition is used for organic deposition. With this method, leakage current between adjacent pixels becomes an issue in the organic layer where hole mobility is high. The main causes of leakage current include lateral leakage between pixels in the layer with high hole electron mobility in the organic layer, and vertical leakage due to low voltage in the thin layer caused by deterioration of the organic coating.

[0011] To address this issue, a pixel-separating insulating film is arranged so that the low-resistance organic material is cut between pixels. Furthermore, the anode portion of the pixel-separating insulating film arranged between pixels is tapered, and the taper angle is made high to thin the layer with high hole mobility, lowering the mobility and suppressing leakage. Also, current leakage in the first layer HIL / HTL, etc. is blocked.

[0012] However, with this technology, when the organic structure of the organic layer is a multi-stack, it is difficult to take measures for the second stack or more. In the case of an organic structure of two or more stacks, even if the current leakage in the first layer HIL / HTL etc. is blocked, it is difficult to block the current leakage in the layer with high hole electron mobility. Furthermore, even in an organic layer having a one-stack organic structure, there is a possibility that the film thickness design value of the layer with high hole mobility is limited, making it difficult to make it sufficiently thin. In that case, it is difficult to suppress the occurrence of leakage current in the organic layer with high hole mobility, and there is a possibility that the electrical characteristics, light emitting characteristics, reliability, etc. may be deteriorated.

[0013] [Configuration of the Light-Emitting Device According to the First Embodiment] 1 is a cross-sectional view of a light-emitting element according to embodiment 1. As shown in FIG. 1, a light-emitting element 1 according to this embodiment has an anode electrode 11, a pixel-isolating insulating film 12, and an organic layer .

[0014] The anode electrode 11 is provided for each pixel so as to be electrically separated from the other pixels, and also functions as a reflective layer, and it is desirable for the anode electrode 11 to have as high a reflectance as possible in order to improve the light-emitting efficiency. In addition, since the anode electrode 11 is used as a positive electrode, it is desirable for the anode electrode 11 to be made of a material having a high hole-injecting property.

[0015] The thickness of the anode electrode 11 in the stacking direction (hereinafter simply referred to as thickness) is, for example, 30 nm or more and 1000 nm or less. The pitch of the anode electrodes 11 (the distance between adjacent anode electrodes 11) is, for example, about 200 nm to 1000 nm. The constituent material of the anode electrode 11 includes a single metal element or an alloy such as chromium (Cr), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), molybdenum (Mo), tungsten (W), titanium (Ti), tantalum (Ta), silver (Ag) or aluminum (Al). A transparent conductive film such as an oxide of indium and tin (ITO) may be provided on the surface of the anode electrode 11. The thickness of the anode electrode 11 is appropriately set depending on the balance between the wiring resistance and the reflectance (surface roughness). In the case of a so-called bottom emission type (bottom emission type), the anode electrode 11 is composed of a transparent conductive film.

[0016] The pixel-isolating insulating film 12 serves to electrically separate the anode electrodes 11 for each pixel, and to ensure insulation between the anode electrodes 11 and the cathode electrodes 14 in contact with the organic layer 13. The pixel-isolating insulating film 12 is formed by laminating a lower insulating layer 121 (first insulating layer), an intermediate insulating layer 122 (second insulating layer), and an upper insulating layer 123 (third insulating layer). This pixel-isolating insulating film 12 is an example of an "insulating layer".

[0017] The lower insulating layer 121 has an opening that exposes the surface of the anode electrode 11 (the surface facing the cathode electrode 14) to the outside, and is provided so as to cover the periphery of the anode electrode 11 from the surface to the side surface (end surface). The opening of the lower insulating layer 121 is formed in a tapered shape such that an inner wall 121A extending from the surface facing the cathode electrode 14 toward the anode electrode 11 becomes smaller toward the anode electrode 11 side.

[0018] Intermediate insulating layer 122 is laminated on the surface of lower insulating layer 121 facing cathode electrode 14. Intermediate insulating layer 122 is disposed at a fixed distance from each point on the periphery of the opening of lower insulating layer 121. That is, intermediate insulating layer 122 has an opening whose periphery is located at a fixed distance from the opening of lower insulating layer 121. Inner wall 122A of the opening of intermediate insulating layer 122 according to this embodiment has a surface perpendicular to anode electrode 11 in the thickness direction.

[0019] The upper insulating layer 123 is laminated on the surface of the intermediate insulating layer 122 facing the cathode electrode 14. The upper insulating layer 123 has an opening with a tapered inner wall 123A. The opening of the upper insulating layer 123 has a shape in which the outer periphery of the inner wall 123A on the anode electrode 11 side is reduced inward by a certain distance from the outer periphery of the opening of the intermediate insulating layer 122. The outer periphery of the inner wall 123A of the opening of the upper insulating layer 123 becomes larger in the direction away from the anode electrode 11. The portion including the thickness of the inner wall 123A of the upper insulating layer 123 becomes the overhang 123B as described later. That is, the overhang 123B is tapered.

[0020] Here, the organic adhesion of the organic layer 13, which will be described later, to the tapered inner wall 123A of the upper insulating layer 123 is poor. Therefore, it is preferable that the overhang 123B of the upper insulating layer 123 is made thinner or has a smaller taper angle than the combined thickness of the inner wall 121A, the inner wall 122A, and the inner wall 123A. This can improve the organic adhesion of the organic layer 13 to the inner wall 123A. The maximum angle at which the organic adhesion of the organic layer 13 can be improved is an example of the "predetermined angle." Note that the overhang 123B may be made thinner and have a smaller taper angle.

[0021] An opening 120 in the pixel isolating insulating film 12 is formed by an opening in the lower insulating layer 121, an opening in the intermediate insulating layer 122, and an opening in the upper insulating layer 123. The opening 120 defines a light emitting region of the light emitting element 1. The planar shape of the opening 120 is not particularly limited, and may be, for example, a rectangular, square, or circular shape.

[0022] In the present embodiment, at the edge of opening 120, the edge of the opening of upper insulating layer 123 protrudes further inward into opening 120 than the edge of the opening of intermediate insulating layer 122, and this protruding portion becomes eaves 123B. In other words, at the edge of opening 120, inner wall 122A of intermediate insulating layer 122 is formed receding from the position of the end of inner wall 123A of upper insulating layer 123 on the anode electrode 11 side.

[0023] By providing the canopy 123B, as described later, the first OLED layer 131 and the CGL 132 in the organic layer 13 are cut. Therefore, the shape including the thickness, length, and taper angle of the canopy 123B and the shape including the thickness of the intermediate insulating layer 122 are determined so that the first OLED layer 131 and the CGL 132 are cut at the organic layer cut portion P when the first OLED layer 131 and the CGL 132 are vapor-deposited. The height and width of the canopy 123B are set to values ​​that allow the first OLED layer 131 and the CGL 132 to be cut depending on the thickness, material, and etching conditions of the upper insulating layer 123 and the intermediate insulating layer 122, the width of the opening 120, the material and thickness of the first OLED layer 131 and the CGL 132, and the like.

[0024] In the present embodiment, at the edge of the opening 120, the edge of the opening in the lower insulating layer 121 protrudes further inward into the opening 120 than the edge of the opening in the upper insulating layer 123. It is preferable that the distance L between the position of the end of the inner wall 121A of the lower insulating layer 121 on the anode electrode 11 side and the position of the end of the inner wall 123A of the upper insulating layer 123 on the anode electrode 11 side be a certain distance. For example, the distance L can be set to 200 nm. By making this distance L longer than a certain length, it is possible to improve pixel edge vertical leakage.

[0025] The lower insulating layer 121, the upper insulating layer 123, and the intermediate insulating layer 122 are each made of different materials that can obtain an etching selectivity, such as, for example, silicon oxide, silicon nitride, silicon oxynitride, or aluminum oxide. In this embodiment, for example, the lower insulating layer 121 and the upper insulating layer 123 are made of silicon oxide (SiO2), and the intermediate insulating layer 122 is made of silicon nitride (SiN). However, as long as an etching selectivity can be obtained between the lower insulating layer 121, the upper insulating layer 123, and the intermediate insulating layer 122, a material different from the lower insulating layer 121 and the upper insulating layer 123 may be used. Also, a material that can obtain an etching selectivity may be used between the lower insulating layer 121 and the upper insulating layer 123. In this way, by using a material that can obtain an etching selectivity, the lower insulating layer 121, the upper insulating layer 123, and the intermediate insulating layer 122 can be easily processed into a desired shape.

[0026] The organic layer 13 includes a first OLED layer 131, a CGL (Charge Generation Layer) 132, and a second OLED layer 133, which are stacked together. Although not shown, the organic layer 13 also includes an electron injection layer, an electron transport layer, a hole transport layer, a hole injection layer, and the like.

[0027] The first OLED layer 131 is a blue light-emitting layer. When an electric field is applied to the first OLED layer 131, some of the holes injected from the anode electrode 11 and some of the electrons injected from the cathode electrode 14 are recombined to emit blue light. The first OLED layer 131 includes, for example, at least one of a blue light-emitting material, a hole transport material, an electron transport material, and a positive and negative charge transport material. The blue light-emitting material may be fluorescent or phosphorescent. For example, the first OLED layer 131 is composed of a mixture of DPVBi and 2.5% by weight of 4,4'-bis[2-{4-(N,N-diphenylamino)phenyl}vinyl]biphenyl (DPAVBi).

[0028] The first OLED layer 131 is formed by deposition, for example, by a vapor deposition method. By depositing on the canopy 123B, a region that is shaded by the canopy 123B and the elements deposited on the canopy 123B is formed on the surface of the lower insulating layer 121 on the cathode electrode 14 side. The first OLED layer 131 is no longer deposited in the shaded region, and is cut at the organic layer cut portion P. Such a phenomenon in which the organic layer is cut due to being shaded by the canopy 123B and the elements deposited on the canopy 123B during vapor deposition is sometimes called the "shadowing phenomenon in the organic vapor deposition process."

[0029] The CGL 132 is a charge generating layer formed of a highly conductive material to supply carriers, and is a layer with high hole mobility. The CGL 132 supplies electrons to the first OLED layer 131 and holes to the second OLED layer 133, and maintains an equipotential surface within the CGL 132 by supplying equal amounts of charge to each. The CGL 132 increases the light emission efficiency.

[0030] CGL 132 is formed by deposition, for example, by a vapor deposition method. By being laminated on overhang 123B and deposited on first OLED layer 131, CGL 132 is also not deposited in the area shaded by overhang 123B and the elements deposited on overhang 123B on the surface of lower insulating layer 121 on the cathode electrode 14 side, and is cut at organic layer cut portion P due to the shadowing phenomenon in the organic vapor deposition process.

[0031] The second OLED layer 133 is a red and green light emitting layer. In the second OLED layer 133, a part of holes injected from the anode electrode 11 and a part of electrons injected from the cathode electrode 14 are recombined by applying an electric field, and the second OLED layer 133 emits red and green light. The second OLED layer 133 includes, for example, at least one of a red and green light emitting material, a hole transporting material, an electron transporting material, and a positive and negative charge transporting material. The red and green light emitting materials may be fluorescent or phosphorescent.

[0032] The second OLED layer 133 is formed by deposition, for example, by a vapor deposition method. The second OLED layer 133 is deposited on each of the CGL 132 laminated on the canopy 123B and the CGL 132 laminated on the anode electrode 11. The CGL 132 is cut at the organic layer cut portion P, but the interval is short. Therefore, the second OLED layer 133 deposited on the CGL 132 laminated on the canopy 123B and the second OLED layer 133 deposited in the same manner as the CGL 132 laminated on the anode electrode 11 are connected. In other words, the second OLED layer 133 fills the opening of the organic layer cut portion P to become one continuous layer.

[0033] By filling the opening of the organic layer cut portion P, a space S surrounded by the pixel isolating insulating film 12 and the organic layer 13 is generated. This space S may be filled with the second OLED layer 133.

[0034] The cathode electrode 14 is formed so as to cover the entire surface of the second OLED layer 133 opposite to the anode electrode 11. The cathode electrode 14 is made of, for example, a light-transmitting conductive film, such as a single layer film of ITO, IZO, ZnO, InSnZnO, MgAg alloy, Ag, or the like, or a laminated film containing two or more of these. In the case of a bottom emission type, the same materials as those listed for the anode electrode 11 can be used.

[0035] In this way, the organic layer 13 is formed by stacking the first OLED layer 131, which is a blue light-emitting layer, and the second OLED layer 133, which is a red and green light-emitting layer, and the light generated by each layer is mixed to generate white light. However, the organic layer 13 is not limited to such a stacked structure as long as it is configured to generate white light. For example, the organic layer 13 may be formed by stacking a blue light-emitting layer and a yellow light-emitting layer, or may be formed by stacking a blue light-emitting layer and an orange light-emitting layer.

[0036] Further, a display device using the light-emitting element 1 will be described. In the display device, a protective layer is formed on the surface of the cathode electrode 14 opposite to the second OLED layer 133. The protective layer is made of silicon nitride, silicon oxide, metal oxide, or the like. Furthermore, in the display device, a color filter layer is formed on the protective layer opposite to the cathode electrode 14. The color filter layer extracts white light generated by the light-emitting element 1 as red light, green light, or blue light for each pixel. For example, the color filter layer is disposed in a position where any one of a red filter layer, a green filter layer, and a blue filter layer faces the light-emitting element 1.

[0037] [Manufacturing method] The light emitting element 1 is manufactured by combining general semiconductor processes. An example of a manufacturing process for the light emitting element 1 and a display device using the light emitting element 1 will be outlined below.

[0038] After forming a driving circuit layer on a substrate by a MOS process, a photosensitive resin, for example, is applied to the entire surface. This photosensitive resin is exposed and developed, and patterned into a predetermined shape to form a planarization layer. After forming connection holes at the same time as the patterning, plugs are formed by filling the connection holes with a conductive material. After that, a metal layer is formed by, for example, a sputtering method, and then wet etching is performed to form anode electrodes 11 separated for each light-emitting element 1 (each pixel).

[0039] Next, the pixel isolating insulating film 12 having the opening 120 and the eaves 123B is generated. Specifically, first, the lower insulating layer 121, the intermediate insulating layer 122, and the upper insulating layer 123 are laminated in this order over the entire surface of the substrate. At this time, the lower insulating layer 121 is formed of, for example, SiON or SiN, the intermediate insulating layer 122 is formed of, for example, SiO2, and the upper insulating layer 123 is formed of, for example, SiON or SiN, for example, by CVD (Chemical Vapor Deposition).

[0040] Next, only the second insulating layer 15B is selectively removed from the stacked lower insulating layer 121, intermediate insulating layer 122, and upper insulating layer 123 by etching using, for example, photolithography, to form an opening in the upper insulating layer 123. Specifically, for example, a photoresist is formed on the upper insulating layer 123 and exposed (patterned). Thereafter, for example, anisotropic (or isotropic) dry etching (or wet etching) is used to process the upper insulating layer 123 to the surface of the intermediate insulating layer 122 under conditions that provide an etching selectivity between the upper insulating layer 123 and the intermediate insulating layer 122. At this time, etching is performed so that the inner wall 123A of the upper insulating layer 123, i.e., the eaves 123B, are tapered. Here, it is preferable that the eaves 123B of the upper insulating layer 123 are formed to be thinner or have a smaller taper angle than the thickness of the inner wall of the opening 120. After processing the upper insulating layer 123, the photoresist is peeled off.

[0041] Next, the exposed intermediate insulating layer 122 is selectively removed to form an opening in the intermediate insulating layer 122. At this time, the intermediate insulating layer 122 is processed to the surface of the lower insulating layer 121 by, for example, isotropic dry etching or isotropic wet etching under conditions that provide an etching selectivity between the intermediate insulating layer 122 and the upper insulating layer 123 and the lower insulating layer 121. As a result, an opening is formed in the intermediate insulating layer 122, and the position of the inner wall 122A of the intermediate insulating layer 122 is set back from the end of the inner wall 123A of the upper insulating layer 123 on the intermediate insulating layer 122 side, forming the overhang 123B.

[0042] Next, the exposed lower insulating layer 121 is selectively removed to form an opening 120. At this time, the lower insulating layer 121 is processed to the surface of the anode electrode 11 by, for example, isotropic dry etching or isotropic wet etching under conditions that provide an etching selectivity between the lower insulating layer 121 and the intermediate insulating layer 122. At this time, etching is performed so that the inner wall 121A of the lower insulating layer 121 has a tapered shape. In addition, the distance L between the end of the inner wall 121A of the lower insulating layer 121 on the anode electrode 11 side and the end of the inner wall 123A of the upper insulating layer 123 on the anode electrode 11 side is formed to have a certain length.

[0043] Thereafter, a hole injection layer and a hole transport layer are formed in this order on the entire surface of the substrate by, for example, a vacuum deposition method, a sputtering method, or a coating method such as a spin coating method or a die coating method. At this time, the hole injection layer is cut off by the overhang 123B formed in the opening 120 of the pixel separating insulating film 12.

[0044] Next, the first OLED layer 131 is formed by, for example, a vacuum deposition method, a sputtering method, or a coating method such as a spin coating method or a die coating method. At this time, the first OLED layer 131 is cut by the overhang 123B formed in the opening 120 of the pixel separating insulating film 12.

[0045] Next, the CGL 132 is formed by, for example, a vacuum deposition method, a sputtering method, or a coating method such as a spin coating method or a die coating method. At this time, the CGL 132 is cut by the overhang 123B formed in the opening 120 of the pixel isolating insulating film 12.

[0046] In this manner, in this embodiment, the overhang 123B allows the first OLED layer 131 and the CGL 132 to be formed separately for each anode electrode 11 without separate patterning.

[0047] Next, the second OLED layer 133 is formed by, for example, a vacuum deposition method, a sputtering method, or a coating method such as a spin coating method or a die coating method. In this case, the second OLED layer 133 is formed in a state where it is connected without being cut by the overhang 123B. The cut portions of the first OLED layer 131 and the CGL 132 are filled with the second OLED layer 133, thereby forming the void S.

[0048] Next, the cathode electrode 14 made of the above-mentioned material is formed on the entire surface of the substrate by, for example, vacuum deposition or sputtering. In this manner, the organic layer 13 and the cathode electrode 14 can be successively formed on the anode electrode 11, for example, in a vacuum atmosphere. In addition, the organic layer 13 and the cathode electrode 14 are formed not only in the region directly above the anode electrode 11, but also in the region between adjacent anode electrodes 11 (between pixels), resulting in an element structure. In this manner, the light-emitting element 1 is formed.

[0049] Next, for example, by CVD or sputtering, a protective layer is formed on the light-emitting element 1. Furthermore, a sealing substrate having a color filter layer is bonded onto the protective layer via an adhesive layer. In this way, a display device having the light-emitting element 1 can be manufactured.

[0050] Fig. 2 is a diagram of one example of the light-emitting element according to the first embodiment. As shown in Fig. 2, the pixel separating insulating film 12 has a lower insulating layer 121, an intermediate insulating layer 122, and an upper insulating layer 123, each having an opening 120. The intermediate insulating layer 122 is recessed toward the center of the opening 120 more than the upper insulating layer 123 to form an overhang 123B. By providing this overhang 123B, the first OLED layer 131 and the CGL 132 are cut as shown in Fig. 2. In addition, in the example of Fig. 2, a gap S is formed.

[0051] [Action, effect] In the light-emitting element 1 of the present embodiment, a driving current is injected. This driving current is injected through the anode electrode 11 and the cathode electrode 14 into the first OLED layer 131 and the second OLED layer 133 of the organic layer 13 via the CGL 132, whereby holes and electrons are recombined, causing light emission.

[0052] When white light is generated by mixing the colors of light generated by the first OLED layer 131 and the second OLED layer 133, the light is repeatedly reflected between the anode electrode 11 and the cathode electrode 14, and then passes through the cathode electrode 14, the protective layer, and the color filter, and is extracted. Specifically, the white light generated from the organic layer 13 and passed through the cathode electrode 14 is color-separated into, for example, RGB (Red, Green, Blue) color lights in the color filter layer. That is, of the white light generated from the light-emitting element 1, the red light is selectively transmitted through the red filter layer, the green light is selectively transmitted through the green filter layer, and the blue light is selectively transmitted through the blue filter layer. In this way, an image is displayed with a set of light-emitting elements 1 emitting R, G, and B color lights as one pixel.

[0053] Here, in a display device having the light-emitting element 1, the organic layer 13 and the cathode electrode 14 are continuously formed as a solid film without being patterned for each pixel.

[0054] Here, Fig. 3 is a cross-sectional view of a light-emitting element having a continuous CGL. The light-emitting element 2 has an anode electrode 21, a pixel-separating insulating film 22, a first OLED layer 23, a CGL 24, a second OLED layer 25, and a cathode electrode 26, similar to the light-emitting element 1 according to this embodiment. However, the pixel-separating insulating film 22 does not have an overhang at the middle position of the inner wall of the opening. Therefore, as shown in Fig. 3, in the conventional light-emitting element 2, the first OLED layer 23 and the CGL 24 are not cut for each anode electrode 21 (for each pixel). Therefore, adjacent pixels are electrically connected in the CGL 24, which is a layer with high hole mobility.

[0055] 4 is a diagram for explaining the influence of leakage current in a CGL. Cross section 301 shows a state where a current flows through anode electrode 21A corresponding to red filter layer 27A. Cross section 302 shows a state where a current flows through anode electrode 21B corresponding to green filter layer 27B. Cross section 303 shows a state where a current flows through anode electrode 21C corresponding to blue filter layer 27C.

[0056] As shown in the cross section 301, when a current flows through the anode electrode 21A and the cathode electrode 26, light is emitted at a position corresponding to the red filter layer 27A in the first OLED layer 23. Then, a current flows through the CGL 24 to the second OLED layer 25. At this time, a current leak occurs between adjacent pixels in the CGL 24. Therefore, the current flows to the positions of the green filter layer 27B and the blue filter layer 27C, and light is emitted at positions corresponding to the red filter layer 27A, the green filter layer 27B, and the blue filter layer 27C in the second OLED layer 25. As a result, red and green light are generated, the red light is extracted by the red filter layer 27A, and the green light is extracted by the green filter layer 27B.

[0057] Also, as shown in cross section 302, when a current flows through anode electrode 21B and cathode electrode 26, light emission occurs at a position corresponding to green filter layer 27B in first OLED layer 23. Then, a current flows through CGL 24 to second OLED layer 25. At this time, current leakage occurs between adjacent pixels in CGL 24. Therefore, a current flows to the positions of red filter layer 27A and blue filter layer 27C, and light emission occurs at positions corresponding to red filter layer 27A, green filter layer 27B, and blue filter layer 27C in second OLED layer 25. As a result, red and green light are generated, red light is extracted by red filter layer 27A, and green light is extracted by green filter layer 27B.

[0058] Also, as shown in the cross section 303, when a current flows through the anode electrode 21C and the cathode electrode 26, light is emitted at a position corresponding to the blue filter layer 27C in the first OLED layer 23. Then, a current flows through the CGL 24 to the second OLED layer 25. At this time, a current leak occurs between adjacent pixels in the CGL 24. Therefore, a current flows to the positions of the red filter layer 27A and the green filter layer 27B, and light is emitted at positions corresponding to the red filter layer 27A, the green filter layer 27B, and the blue filter layer 27C in the second OLED layer 25. As a result, blue light is extracted by the blue filter layer 27C, and red and green light are generated, red light is extracted by the red filter layer 27A, and green light is extracted by the green filter layer 27B.

[0059] In this way, in the conventional light-emitting element 2, pixels other than the applied pixel are also excited to emit light, resulting in deterioration of the light-emitting characteristics. In contrast, in the present embodiment, the canopy 123B is provided at the middle position of the inner wall of the opening 120 of the pixel separating insulating film 12, and the first OLED layer 131 and the CGL 132 are cut by this canopy 123B. In particular, by cutting the CGL 132, the CGL 132 is electrically cut off between adjacent pixels while the organic layer 13 and the cathode electrode 14 are continuously and solidly formed on the anode electrode 11.

[0060] By providing the pixel separating insulating film 12 having the opening 120 with the canopy 123B on the anode electrode 11 provided for each pixel, the CGL 132 can be electrically isolated between each pixel. This makes it possible to suppress current leakage in a structure in which the organic layer 13 is continuously and solidly formed on all pixels. This makes it possible to suppress excited light emission in pixels other than the applied pixel, improves the charge injection efficiency (here, the hole injection efficiency), and improves the light emission efficiency. Furthermore, since the current leakage to adjacent pixels is reduced, the occurrence of color mixing can also be suppressed.

[0061] (Variation 1) The light-emitting element 1 according to this modification differs from that of the first embodiment in the shape of the intermediate insulating layer 122. Fig. 5 is a diagram illustrating an outline of a cross section of a pixel-isolating insulating film according to Modification 1 of the first embodiment. The pixel-isolating insulating films 12 shown in cross sections 201 to 204 in Fig. 5 each have an intermediate insulating layer 122 with a different shape.

[0062] In the light-emitting element 1 according to the first embodiment, the inner wall 122A of the opening of the intermediate insulating layer 122 has a tapered shape perpendicular to the surface of the anode electrode 11. Hereinafter, the shape of the pixel-isolating insulating film 12 of the light-emitting element 1 according to the first embodiment is referred to as the standard shape.

[0063] In contrast, inner wall 122A in cross section 201 has a tapered shape such that the opening becomes larger from the cathode electrode 14 side toward the anode electrode 11 side, i.e., the inverse tapered shape of eaves 123B. In this case, the end position of the opening of intermediate insulating layer 122 on the cathode electrode 14 side is located farther from the center of the opening than the end position of the opening of upper insulating layer 123 on the anode electrode 11 side.

[0064] Furthermore, inner wall 122A in cross section 202 has an inverse tapered shape of overhang 123B, similar to cross section 201. However, in this case, the position of the end of the opening of intermediate insulating layer 122 on the cathode electrode 14 side coincides with the position of the end of the opening of upper insulating layer 123 on the anode electrode 11 side.

[0065] Furthermore, inner wall 122A in cross section 203 has a tapered shape such that the opening becomes smaller from the cathode electrode 14 side toward the anode electrode 11 side, i.e., a forward tapered shape of eaves 123B. In this case, the end position of the opening of intermediate insulating layer 122 on the cathode electrode 14 side is located farther from the center of the opening than the end position of the opening of upper insulating layer 123 on the anode electrode 11 side.

[0066] 5, the end position of the opening in intermediate insulating layer 122 on the cathode electrode 14 side coincides with the end position of the opening in upper insulating layer 123 on the anode electrode 11 side. However, the end position of the opening in intermediate insulating layer 122 on the cathode electrode 14 side may be located farther from the center of the opening than the end position of the opening in upper insulating layer 123 on the anode electrode 11 side.

[0067] The light-emitting element 1 according to this modification can use any one of the cross sections 201 to 204. In any shape of the cross sections 201 to 204, the first OLED layer 131 and the CGL 132 are cut due to the shadowing phenomenon in the organic vapor deposition process.

[0068] As described above, the light-emitting element 1 according to this modification has a pixel-isolating insulating film 12 having a shape different from the standard shape, and even with such a pixel-isolating insulating film 12, the CGL 132 is cut. Therefore, it is possible to suppress current leakage and suppress excited light emission in pixels other than the applied pixel, thereby improving the light-emitting characteristics. Thus, there is no particular limitation on the shape of the pixel-isolating insulating film 12 as long as the CGL 132 can be cut by the shadowing phenomenon in the organic vapor deposition process by providing the canopy 123B.

[0069] (Variation 2) Fig. 6 is a cross-sectional view of a pixel isolating insulating film according to Modification 2 of the first embodiment. In the light-emitting element 1 according to this modification, as shown in Fig. 6, the distance from the end of the opening side of the upper insulating layer 123 to the end of the opening side of the lower insulating layer 121 is longer than that of the pixel isolating insulating film 12 shown in Fig. 1.

[0070] In this way, by increasing the distance from the end of the opening side of the upper insulating layer 123 to the end of the opening side of the lower insulating layer 121, it is possible to improve the deterioration of the coating properties of the second OLED layer 133, the cathode electrode 14, and the protective film.

[0071] (Variation 3) Fig. 7 is a diagram showing a cross section of a pixel isolating insulating film according to Modification 3 of the first embodiment. In the light emitting element 1 according to this modification, as shown in Fig. 7, the thickness of the upper insulating layer 123 is formed to be thicker than the thickness of the upper insulating layer 123 of the pixel isolating insulating film 12 shown in Fig. 1. Furthermore, the taper angle of the inner wall 123A is smaller than the taper angle of the inner wall 123A of the pixel isolating insulating film 12 shown in Fig. 1.

[0072] In this way, even if the upper insulating layer 123 is thick, the first OLED layer 131 and the CGL 132 are cut by reducing the taper angle of the inner wall 123A. Therefore, in order to cut the first OLED layer 131 and the CGL 132, the pixel isolating insulating film 12 of the light-emitting element 1 can be selected between thinning the upper insulating layer 123 or reducing the taper angle of the inner wall 123A.

[0073] Second Embodiment Next, a second embodiment will be described. The light-emitting element 1 according to this embodiment differs from the first embodiment in that an additional layer is added to the pixel-isolating insulating film 12 in addition to the lower insulating layer 121, the intermediate insulating layer 122, and the upper insulating layer 123. The light-emitting element 1 according to this embodiment has the same structure as that shown in FIG. 1, except for the shape of the pixel-isolating insulating film 12.

[0074] 8 is a cross-sectional view of an image-separating insulating film according to the second embodiment. As shown in cross section 211, the pixel-separating insulating film 12 according to this embodiment has a lowermost insulating layer 124 below a lower insulating layer 121. An opening 120 in the pixel-separating insulating film 12 is formed to include an opening in the lowermost insulating layer 124.

[0075] The inner wall of the opening in the lowest insulating layer 124 has a region farther from the center of the opening 120 than the end of the inner wall of the opening in the lower insulating layer 121 on the anode electrode 11 side. In other words, the inner wall of the opening in the lowest insulating layer 124 has a region recessed toward the center of the opening 120 more than the end of the inner wall of the opening in the lower insulating layer 121 on the anode electrode 11 side. As a result, a part of the lower insulating layer 121 is formed as overhang 121B.

[0076] From the viewpoint of flatness, it is desirable that the height of overhang 121B is set to a value as small as possible that can cut the hole injection layer arranged on the anode electrode 11 side of first OLED layer 131 in organic layer 13. The height and width of overhang 121B are set to a value that can cut the hole injection layer depending on the respective thicknesses, materials and etching conditions of lower insulating layer 121 and lowermost insulating layer 124, the width of opening 120, the material and thickness of the hole injection layer, etc. Note that the layer cut by lowermost insulating layer 124 is not limited to the hole injection layer, and other layers of organic layer 18 may be cut.

[0077] The bottom insulating layer 124 is formed by the following method. The lower insulating layer 121 is selectively removed to form an opening, and the bottom insulating layer 124 is exposed. Then, the exposed bottom insulating layer 124 is selectively removed to form an opening in the bottom insulating layer 124. At this time, the bottom insulating layer 124 is processed to the surface of the anode electrode 11 by, for example, isotropic dry etching or isotropic wet etching under conditions that provide an etching selectivity between the bottom insulating layer 124 and the lower insulating layer 121. As a result, an opening is formed in the bottom insulating layer 124, and the position of the inner wall of the bottom insulating layer 124 is set back from the end of the lower insulating layer 121 on the bottom insulating layer 124 side, forming the eaves 121B. This eaves 121B is an example of a "lower end layer cutting eaves."

[0078] The hole injection layer of the organic layer 13 is cut by the shadowing phenomenon in the organic vapor deposition process during vapor deposition when the lowest insulating layer 124 is provided and the canopy 121B is formed. That is, the hole injection layer of the organic layer 13 is cut for each anode electrode 11 (for each pixel). Here, in this embodiment, the hole injection layer is cut by the canopy 121B, but if the positive and negative electrodes are reversed in structure, the electron injection layer in the organic layer 13 is cut by the canopy 121B. That is, the hole injection layer or the electron injection layer is a layer located at the end of the organic layer 13, and the side located on the anode electrode 11 side is the lower end layer, and is cut by the canopy 121B.

[0079] Moreover, the first OLED layer 131 and the CGL 132 are cut off by the shadowing phenomenon in the organic vapor deposition process during deposition by the canopy 123B, similarly to the first embodiment.

[0080] In this way, the light-emitting element 1 according to this embodiment has a hole injection layer that is cut for each pixel. The hole injection layer 17 can be electrically isolated between each pixel. Therefore, in an element structure having a light-emitting layer common to all pixels, it is possible to suppress current leakage. In addition, since the current leakage in the hole injection layer can be suppressed, the hole injection layer can be made thicker, thereby achieving further improvement in hole injection efficiency and therefore light-emitting efficiency.

[0081] (Modification) The light-emitting element 1 according to this modification has a pixel-isolating insulating film 12 corresponding to three or more stages of light-emitting layers. Fig. 9 is a diagram showing an outline of a cross section of a pixel-isolating insulating film according to a modification of the second embodiment. The pixel-isolating insulating film 12 of the light-emitting element 1 according to this example has a shape represented by a cross section 212 or 213.

[0082] The pixel isolating insulating film 12 having a cross section 212 has a second middle-stage insulating layer 125 and a second upper-stage insulating layer 126 on an upper-stage insulating layer 123. The inner wall of the second middle-stage insulating layer 125 is located farther from the center of the opening 120 than the end of the second upper-stage insulating layer 126 on the second middle-stage insulating layer 125 side. As a result, a part of the second upper-stage insulating layer 126 is formed as an overhang 126B.

[0083] The second middle insulating layer 125 and the second upper insulating layer 126 are manufactured in a manner similar to the manufacturing procedure of the intermediate insulating layer 122 and the upper insulating layer 123 described in the first embodiment.

[0084] In this case, the organic layer 13 has three OLED layers. Here, the three OLED layers are referred to as a first layer, a second layer, and a third layer from the anode electrode 11 side. A first CGL is laminated between the first layer and the second layer, and a second CGL is laminated between the second layer and the third layer.

[0085] The first layer and the first CGL are cut for each anode electrode 11 (for each pixel) due to a shadowing phenomenon in the organic vapor deposition process caused by the provision of the canopy 123B. Also, the second layer and the second CGL are cut for each anode electrode 11 (for each pixel) due to a shadowing phenomenon in the organic vapor deposition process caused by the provision of the canopy 126B.

[0086] The pixel isolating insulating film 12 having a cross section 213 has a second middle-level insulating layer 125, a second upper-level insulating layer 126, a third middle-level insulating layer 127, and a third upper-level insulating layer 128 on the upper-level insulating layer 123. The inner wall of the second middle-level insulating layer 125 is located farther from the center of the opening 120 than the end of the second upper-level insulating layer 126 on the second middle-level insulating layer 125 side. As a result, a part of the upper-level insulating layer 123 is formed as an overhang 126B. Also, the inner wall of the third middle-level insulating layer 127 is located farther from the center of the opening 120 than the end of the third upper-level insulating layer 128 on the third middle-level insulating layer 127 side. As a result, a part of the third upper-level insulating layer 128 is formed as an overhang 128B.

[0087] The second middle insulating layer 125 and the second upper insulating layer 126, as well as the third middle insulating layer 127 and the third upper insulating layer 128, are manufactured in a manner similar to the manufacturing procedure of the intermediate insulating layer 122 and the upper insulating layer 123 described in the first embodiment.

[0088] In this case, the organic layer 13 has four OLED layers. Here, the four OLED layers are referred to as a first layer, a second layer, a third layer, and a fourth layer from the anode electrode 11 side. A first CGL is laminated between the first layer and the second layer, a second CGL is laminated between the second layer and the third layer, and a third CGL is laminated between the third layer and the fourth layer.

[0089] The first layer and the first CGL are cut into individual anode electrodes 11 (pixels) due to the shadowing phenomenon in the organic vapor deposition process caused by the provision of canopy 123B. The second layer and the second CGL are cut into individual anode electrodes 11 (pixels) due to the shadowing phenomenon in the organic vapor deposition process caused by the provision of canopy 126B. The third layer and the third CGL are cut into individual anode electrodes 11 (pixels) due to the shadowing phenomenon in the organic vapor deposition process caused by the provision of canopy 128B.

[0090] Here, in this modified example, a case has been described in which the pixel-isolating insulating film 12 has a shape corresponding to the organic layer 13 having three OLED layers or four OLED layers. However, there is no particular restriction on the number of OLED layer stages, and the pixel-isolating insulating film 12 may have an overhang in accordance with the number of OLED layer stages.

[0091] As described above, in the light-emitting element 1 according to this embodiment, the organic layer 13 has three or more stages of OLED layers and CGLs, and each CGL is cut for each pixel. This makes it possible to suppress current leakage in the CGL. Therefore, it is possible to suppress excited light emission in pixels other than the applied pixel, and improve the light-emitting characteristics.

[0092] Here, in this modification, the pixel isolating insulating film 12 having the same number of eaves as the CGL to be cut has been described, but if there is a CGL in the CGL that is to be cut due to the inclination of the inner wall of the opening 120 including the eaves, it is not necessary to provide an eaves corresponding to that CGL. In other words, if there is a CGL in the CGL to be cut due to the inclination of the inner wall of the opening 120, it is sufficient to provide the pixel isolating insulating film 12 with eaves in the number obtained by subtracting the number of those CGLs from the total number of CGLs to be cut.

[0093] (Third embodiment) 10 is a cross-sectional view of a pixel isolating insulating film according to a third embodiment. The pixel isolating insulating film 12 of the light-emitting element 1 according to this embodiment has a structure represented by any one of cross sections 221 to 224. The light-emitting element 1 according to this embodiment has the same structure as that shown in FIG.

[0094] The pixel isolating insulating film 12 having a cross section 221 has the following structure. The lower insulating layer 121 has an opening in the form of a two-step staircase. The lower insulating layer 121 is formed such that the step on the cathode electrode 14 side is recessed toward the center of the opening more than the cut surface on the anode electrode 11 side. Furthermore, the inner wall of the opening of the step on the anode electrode 11 side of the lower insulating layer 121 is tapered so that the opening becomes smaller toward the anode electrode 11.

[0095] The pixel isolating insulating film 12 having a cross section 222 is disposed so that the edges of the openings of the lower insulating layer 121 and the upper insulating layer 123 coincide with each other.

[0096] In the pixel isolating insulating film 12 having the cross section 223 , the edge of the opening of the upper insulating layer 123 is disposed closer to the center of the opening than the edge of the lower insulating layer 121 .

[0097] In the pixel isolating insulating film 12 having a cross section 224, the inner walls of the openings of the upper insulating layer 123 and the lower insulating layer 121 are tapered so that the opening becomes larger toward the anode electrode 11. Furthermore, the edge of the opening of the upper insulating layer 123 is located closer to the center of the opening than the edge of the lower insulating layer 121.

[0098] Any of the light-emitting elements 1 according to this embodiment having the pixel-isolating insulating film 12 having any of the cross sections 221 to 224 has the overhang 123B at the middle position of the inner wall of the pixel-isolating insulating film 12. As a result, the light-emitting element 1 according to this example has the CGL 132 cut for each anode electrode 11 (for each pixel).

[0099] 10, however, the organic film adhesion is poor, and a thin organic structure is generated relative to the flat portion of the pixel opening, which may lower the OLED voltage in that portion and cause current leakage in the vertical direction of the organic device in the low voltage region. Therefore, if poor adhesion of the organic film formed on the stepped portion of the pixel separating insulating film 12 is acceptable, the light emitting element 1 according to this embodiment can be used to suppress current leakage and suppress excited light emission in pixels other than the applied pixel, thereby improving the light emitting characteristics.

[0100] (Fourth embodiment) By modifying the shape of the portions other than the overhang 123B as in the cross section 221 in the third embodiment, it is possible to control the cutting state of the organic layer 13 due to the shadowing phenomenon in organic vapor deposition caused by the provision of the overhang structure. The light-emitting element 1 according to this embodiment has a pixel-isolating insulating film 12 in which the shape of the portions other than the overhang 123B has been modified as in the cross section 221. The light-emitting element 1 according to this embodiment has the same structure as that shown in FIG. 1 except for the shape of the pixel-isolating insulating film 12.

[0101] 11 is a cross-sectional view of a pixel isolating insulating film according to the fourth embodiment. The light-emitting element 1 according to this embodiment includes a pixel isolating insulating film 12 having either a cross-section 231 or 232.

[0102] The pixel isolating insulating film 12 having the cross section 231 is obtained by modifying the shape of the lower insulating layer 121 of the cross section 211 shown in Fig. 8 in the same manner as the lower insulating layer 121 of the cross section 211 shown in Fig. 10. By modifying the shape of the lower insulating layer 121, the deposition state of the organic elements below the overhang 123B can be changed, and the relationship between the height of the overhang 123B and the cut portion of the organic layer 13 can be changed.

[0103] In the light-emitting element 1 having the pixel-isolating insulating film 12 having the cross section 231, the hole injection layer is cut due to the shadowing phenomenon in organic vapor deposition caused by the provision of the overhang 121B. Furthermore, by controlling the cut state of the organic layer 13 by changing the shape of the lower insulating layer 121, the first OLED layer 131 and the CGL 132 are reliably cut during vapor deposition due to the shadowing phenomenon in organic vapor deposition caused by the provision of the overhang 123B. In other words, the light-emitting element 1 having the pixel-isolating insulating film 12 having the cross section 231 has the first OLED layer 131 and the CGL 132 reliably cut for each anode electrode 11 (for each pixel).

[0104] The pixel isolating insulating film 12 having the cross section 232 is obtained by modifying the shapes of the upper insulating layer 123 and the second upper insulating layer 126 of the cross section 212 shown in Fig. 9 in the same manner as the upper insulating layer 123 of the cross section 211 shown in Fig. 10. By modifying the shape of the lower insulating layer 121, the deposition state of the organic elements below the overhang 123B can be changed, and by modifying the shape of the upper insulating layer 123, the deposition state of the organic elements below the overhang 126B can be changed, and the relationship between the heights of the overhangs 123B and 126B and the cut portions of the organic layer 13 can be changed. Here, a case will be described in which the organic layer 13 has three light-emitting layers, namely a first layer, a second layer, and a third layer, and a first CGL and a second CGL are laminated between each layer.

[0105] In the light-emitting element 1 having the pixel-isolating insulating film 12 having the cross section 232, the first layer, the first CGL, the second layer, and the second CGL are cut due to a shadowing phenomenon during organic vapor deposition caused by the provision of the canopies 123B and 126B. Furthermore, by changing the shapes of the upper insulating layer 123 and the second upper insulating layer 126 to control the cut state of the organic layer 13, the first layer, the first CGL, the second layer, and the second CGL are reliably cut during vapor deposition. That is, the light-emitting element 1 having the pixel-isolating insulating film 12 having the cross section 232 has the first layer, the first CGL, the second layer, and the second CGL that are reliably cut for each anode electrode 11 (for each pixel) for the organic layer 13 having three light-emitting layers.

[0106] Here, we have described a light-emitting element 1 having a pixel-isolating insulating film 12 having a cross-section 231 or 232. However, as described above, even in a light-emitting element 1 having a pixel-isolating insulating film 12 having a cross-section 211 shown in FIG. 10, the cutting state of the organic layer 13 can be controlled by changing the shape of the lower insulating layer 121.

[0107] As described above, in the light-emitting element 1 according to this embodiment, the shape of parts other than the overhang 123B is modified to control the cutting state of the organic layer 13 caused by the shadowing phenomenon in organic vapor deposition due to the provision of the overhang structure. This makes it possible to reliably cut the target layer contained in the organic layer 13, more reliably suppress current leakage, suppress excited light emission in pixels other than the applied pixel, and improve the light-emitting characteristics.

[0108] Fifth embodiment In each of the above embodiments, it has been explained assuming that there is one continuous lower insulating layer 121, intermediate insulating layer 122, and upper insulating layer 123 between adjacent anode electrodes 11 (between pixels). In contrast, in this embodiment, a plurality of intermediate insulating layers 122 and upper insulating layers 123 are provided between adjacent anode electrodes 11 (between pixels). The light-emitting element 1 according to this embodiment has a structure similar to the structure shown in Fig. 1. Fig. 12 is a cross-sectional view of a light-emitting element according to a fifth embodiment.

[0109] One lower insulating layer 121 is disposed continuously across adjacent anode electrodes 11. That is, the lower insulating layer 121 covering the surface near the end of one anode electrode 11 extends to cover the vicinity of the end of the adjacent anode electrode 11.

[0110] As shown in FIG. 12, two intermediate insulating layers 122 are disposed between adjacent anode electrodes 11.

[0111] Moreover, the upper insulating layers 123 are individually disposed on the surface of each intermediate insulating layer 122 facing the cathode electrode 14. That is, two upper insulating layers 123 are also disposed between adjacent anode electrodes 11.

[0112] In this case, the first OLED layer 131 is disconnected between the anode electrode 11 and the adjacent upper insulating layer 123 due to a shadowing phenomenon in the organic deposition process caused by the canopy 123B. Also, the first OLED layer 131 is disconnected between the two upper insulating layers 123 and lower insulating layers 121 disposed between the adjacent anode electrodes 11 due to a shadowing phenomenon in the organic deposition process caused by the canopy 123B.

[0113] Moreover, CGL 132 is also cut between anode electrode 11 and the adjacent upper insulating layer 123 due to the shadowing phenomenon in the organic vapor deposition process caused by overhang 123B. Moreover, CGL 132 is also cut between the two upper insulating layers 123 and lower insulating layers 121 disposed between adjacent anode electrodes 11 due to the shadowing phenomenon in the organic vapor deposition process caused by overhang 123B.

[0114] The second OLED layer 133 is formed as a continuous layer without being interrupted between each pixel.

[0115] As described above, in the light-emitting element 1 according to this embodiment, a plurality of intermediate insulating layers 122 and upper insulating layers 123 are disposed between adjacent anode electrodes 11 (between pixels). In this way, even if the intermediate insulating layers 122 and upper insulating layers 123 are interrupted between adjacent anode electrodes 11, the light-emitting element 1 can have the CGL 132 cut for each anode electrode 11 (between pixels) if there is an overhanging structure on the anode electrode 11 side. Therefore, the light-emitting element 1 according to this embodiment can also suppress current leakage and suppress excited light emission in pixels other than the applied pixel, thereby improving the light-emitting characteristics.

[0116] Sixth embodiment The light emitting device 1 according to this embodiment differs from Example 1 in that it does not include a lower insulating layer 121. The light emitting device 1 according to this embodiment has the same structure as that shown in Fig. 1 except for the lower insulating layer 121. Fig. 13 is a cross-sectional view of the light emitting device according to the sixth embodiment.

[0117] The light-emitting element 1 according to this embodiment does not have a lower insulating layer 121. That is, a flat insulating layer is disposed between the side surface of the end of one anode electrode 11 and the side surface of the end of the adjacent anode electrode 11, and the surface near the end of the anode electrode 11 is not covered.

[0118] 12, the intermediate insulating layer 122 is disposed on a flat insulating layer that covers the space between adjacent anode electrodes 11. In addition, the upper insulating layer 123 is disposed on the surface of each intermediate insulating layer 122 on the cathode electrode 14 side.

[0119] In this case, the first OLED layer 131 is cut between the anode electrode 11 and the adjacent upper insulating layer 123 by the upper insulating layer 123 due to the shadowing phenomenon in the organic vapor deposition process by the canopy 123B. The CGL 132 is also cut between the anode electrode 11 and the adjacent upper insulating layer 123 due to the shadowing phenomenon in the organic vapor deposition process by the canopy 123B.

[0120] The second OLED layer 133 is formed as a continuous layer without being interrupted between each pixel.

[0121] As described above, the light-emitting element 1 according to this embodiment does not have the lower insulating layer 121, and the intermediate insulating layer 122 and the upper insulating layer 123 are disposed between the anode electrodes 11. In this way, even if the lower insulating layer 121 is not provided, as long as there is an overhanging structure on the anode electrode 11 side, the light-emitting element 1 can have the CGL 132 cut for each anode electrode 11 (between each pixel). Therefore, the light-emitting element 1 according to this embodiment can also suppress current leakage and suppress excited light emission in pixels other than the applied pixel, thereby improving the light-emitting characteristics.

[0122] Seventh embodiment In the light-emitting device 1 according to this embodiment, an intermediate insulating layer 122 and an upper insulating layer 123 are disposed with an anode electrode 11 sandwiched therebetween. In the light-emitting device 1 according to this embodiment, the structure of the organic layer 13 has the same arrangement as the structure shown in Fig. 1. Fig. 14 is a cross-sectional view of the light-emitting device according to the seventh embodiment.

[0123] 14, in the light-emitting element 1 according to this embodiment, an intermediate insulating layer 122 and an upper insulating layer 123 are disposed in close contact with the side surfaces of an anode electrode 11. The intermediate insulating layer 122 and the upper insulating layer 123 have openings between adjacent anode electrodes 11.

[0124] The end portion on the opening side of intermediate insulating layer 122 is located farther from the center of the opening than the end portion on the anode electrode 11 side of the inner wall of the opening of upper insulating layer 123. This forms overhang 123B extending from anode electrode 11 to the outside, in other words, toward the adjacent anode electrode 11.

[0125] In this case, the first OLED layer 131 is cut between the upper insulating layer 123 and the insulating layer covering the space between the anode electrode 11 due to a shadowing phenomenon caused by the canopy 123B in the organic vapor deposition process. The CGL 132 is also cut between the upper insulating layer 123 and the insulating layer covering the space between the anode electrode 11 due to a shadowing phenomenon caused by the canopy 123B in the organic vapor deposition process.

[0126] The second OLED layer 133 is formed as a continuous layer without being interrupted between each pixel.

[0127] As described above, in the light-emitting element 1 according to this embodiment, the intermediate insulating layer 122 and the upper insulating layer 123 are arranged to sandwich the anode electrode 11, and the eaves 123B are formed facing the outside of the anode electrode 11. Even when the intermediate insulating layer 122 and the upper insulating layer 123 are arranged to sandwich the anode electrode 11 in this way, the light-emitting element 1 can have the CGL 132 cut for each anode electrode 11 (between each pixel). Therefore, the light-emitting element 1 according to this embodiment can also suppress current leakage and suppress excited light emission in pixels other than the applied pixel, thereby improving the light-emitting characteristics.

[0128] Although the embodiments of the present disclosure have been described above, the technical scope of the present disclosure is not limited to the above-described embodiments, and various modifications are possible without departing from the gist of the present disclosure. In addition, components of different embodiments and modifications may be appropriately combined.

[0129] It should be noted that the effects described in this specification are merely examples and are not limiting, and other effects may also be obtained.

[0130] The present technology can also be configured as follows. (1) A plurality of first electrodes provided on a substrate for each pixel; an insulating layer provided on the substrate; an organic layer provided on the first electrode; a second electrode disposed on a surface of the organic layer opposite to the first electrode; Equipped with the insulating layer includes, from the substrate side, a first insulating layer, a second insulating layer, and a third insulating layer; the first insulating layer covers at least a portion of a side surface of the first electrode; an edge of the opening of the third insulating layer protrudes inward more than an edge of the opening of the second insulating layer, and this protruding portion forms an overhang, so that the third insulating layer has an overhang shape when viewed in cross section. Light emitting element. (2) The light-emitting element according to (1), wherein the overhang is tapered. (3) The light-emitting element according to (2), wherein the maximum thickness of the eaves is smaller than the thickness of the inner wall of the opening, or the taper angle of the eaves is equal to or smaller than a predetermined angle. (4) The light-emitting element according to any one of (1) to (3), wherein the insulating layer has a plurality of the overhangs. (5) The light-emitting element according to (4), wherein at least one of the plurality of overhangs is a part of the first insulating layer. (6) The light-emitting device according to any one of (1) to (5), further comprising a charge generation layer that is cut off by the overhang. (7) The light-emitting device according to (6), wherein the charge generation layers are present in the same number as the overhangs, and are cut off by the corresponding overhangs. (8) The light-emitting device according to (6) or (7), wherein the insulating layer includes the charge generation layer that is cut by a slope of an inner wall at the opening. (9) The light-emitting element according to any one of (1) to (8), wherein the end of the overhang on the opening side is spaced a predetermined distance away from the center of the opening with respect to the end of the insulating layer on the opening side that is located closer to the first electrode than the overhang. (10) The light-emitting element according to any one of (1) to (8), wherein the end of the overhang on the opening side is the same distance from the center of the opening as the end of the overhang on the opening side of the insulating layer that is located closer to the first electrode than the overhang. (11) The light-emitting element according to any one of (1) to (8), wherein the end of the overhang on the opening side is closer to the center of the opening than the end of the overhang on the opening side of the insulating layer that is located closer to the first electrode than the overhang. (12) The light emitting device according to any one of (1) to (11), wherein the insulating layer has a stepped region located on the first electrode side relative to the overhang. (13) The light-emitting element according to any one of (1) to (12), wherein the insulating layer has a lower-end layer cutting eaves at an end on the first electrode side in a thickness direction. (14) The light emitting element is arranged in a plurality of rows, The light emitting element according to any one of (1) to (13), wherein a plurality of the canopies are disposed between the light emitting elements. (15) The light-emitting element according to any one of (1) to (13), wherein the first electrode has a surface on the opposite side to the opening that is recessed into a region of the opening that is closer to the first electrode than the eaves of the insulating layer. (16) The light-emitting element according to any one of (1) to (13), wherein the first electrode is sandwiched between the overhangs such that the overhangs face in a direction away from the first electrode. (17) The light-emitting element according to any one of (1) to (16), wherein the second insulating layer has an opening whose periphery is located at a certain distance from the opening of the first insulating layer. (18) A substrate; A plurality of first electrodes provided on the substrate for each pixel; an insulating layer provided on the substrate; an organic layer provided on the first electrode; a second electrode disposed on a surface of the organic layer opposite to the first electrode; a color filter layer disposed on a surface of the second electrode opposite to the organic layer; Equipped with the insulating layer includes, from the substrate side, a first insulating layer, a second insulating layer, and a third insulating layer; the first insulating layer covers at least a portion of a side surface of the first electrode; an edge of the opening of the third insulating layer protrudes inward more than an edge of the opening of the second insulating layer, and this protruding portion forms an overhang, so that the third insulating layer has an overhang shape when viewed in cross section. Display device. [Explanation of symbols]

[0131] 1 Light emitting element 11 Anode electrode 12 Pixel isolation insulating film 13 Organic layer 14 Cathode electrode 121 Lower insulating layer 121A Inner wall 121B Eaves 122 Intermediate insulation layer 122A Inner wall 123 Upper insulating layer 123A Inner wall 123B Eaves 131 1st OLED layer 132 CGL 133 2nd OLED layer P Organic layer cut section S void

Claims

1. A plurality of first electrodes provided on a substrate for each pixel; an insulating layer provided on the substrate; an organic layer provided on the first electrode; a second electrode disposed on a surface of the organic layer opposite to the first electrode; Equipped with the insulating layer includes, from the substrate side, a first insulating layer, a second insulating layer, and a third insulating layer; the first insulating layer covers at least a portion of a side surface of the first electrode; an edge of the opening of the third insulating layer protrudes inwardly beyond an edge of the opening of the second insulating layer, and this protruding portion forms an overhang, so that the third insulating layer has an overhang shape when viewed in cross section. Light emitting element.

2. The light-emitting element according to claim 1 , wherein the overhang is tapered.

3. The light-emitting element according to claim 2 , wherein the maximum thickness of the eaves is smaller than the thickness of the inner wall of the opening, or the taper angle of the eaves is equal to or smaller than a predetermined angle.

4. The light-emitting element according to claim 1 , wherein the insulating layer has a plurality of the overhangs.

5. The light-emitting element according to claim 4 , wherein at least one of the plurality of overhangs is a part of the first insulating layer.

6. The light emitting device of claim 1 including a charge generating layer interrupted by the overhang.

7. The light-emitting element according to claim 6 , wherein the charge generation layers are present in the same number as the overhangs, and are cut off by the corresponding overhangs.

8. The light-emitting device according to claim 6 , wherein the insulating layer includes the charge generating layer that is cut by a slope of an inner wall at the opening.

9. The light-emitting element according to claim 1 , wherein an end of the overhang on the opening side is spaced a predetermined distance away from a center of the opening from an end of the insulating layer on the opening side that is located closer to the first electrode than the overhang.

10. The light-emitting element according to claim 1 , wherein an end of the overhang on the opening side is spaced from a center of the opening by the same distance as an end of the insulating layer on the opening side that is located closer to the first electrode than the overhang.

11. The light-emitting element according to claim 1 , wherein an end of the overhang on the opening side is located closer to a center of the opening than an end of the insulating layer on the opening side that is located closer to the first electrode than the overhang.

12. The light-emitting element according to claim 1 , wherein the insulating layer has a stepped area located closer to the first electrode than the overhang.

13. The light-emitting element according to claim 1 , wherein the insulating layer has a lower-end layer cutting visor at an end portion on the first electrode side in the thickness direction.

14. The light emitting element is arranged in a plurality of rows, The light emitting element according to claim 1 , wherein a plurality of the canopies are disposed between the light emitting elements.

15. The light-emitting element according to claim 1 , wherein the first electrode has a surface on an opposite side to the opening direction that is recessed into a region of the opening that is closer to the first electrode than the eaves of the insulating layer.

16. The light-emitting element according to claim 1 , wherein the first electrode is sandwiched between the overhangs such that the overhangs face in a direction away from the first electrode.

17. The light-emitting device according to claim 1 , wherein the second insulating layer has an opening whose periphery is located at a certain distance from the opening of the first insulating layer.

18. A substrate; A plurality of first electrodes provided on the substrate for each pixel; an insulating layer provided on the substrate; an organic layer provided on the first electrode; a second electrode disposed on a surface of the organic layer opposite to the first electrode; a color filter layer disposed on a surface of the second electrode opposite to the organic layer; Equipped with the insulating layer includes, from the substrate side, a first insulating layer, a second insulating layer, and a third insulating layer; the first insulating layer covers at least a portion of a side surface of the first electrode; an edge of the opening of the third insulating layer protrudes inwardly beyond an edge of the opening of the second insulating layer, and this protruding portion forms an overhang, so that the third insulating layer has an overhang shape when viewed in cross section. Display device.

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