Multiplexer, wireless communication device, and bulk acoustic wave device

Abstract

To provide a bulk acoustic wave (BAW) device that includes a multi-layer raised frame structure, a filter, a multiplexer, a packaged module, and a wireless communication device and a method.SOLUTION: In a dual raised frame bulk acoustic wave device 20, a multi-layer raised frame structure includes a first raised frame layer 23 positioned between a first electrode 21 and a second electrode 22 of the bulk acoustic wave device. The first raised frame layer has a lower acoustic impedance than the first electrode. The first and second raised frame layers overlap in the active area of the bulk acoustic wave device.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] CROSS REFERENCE TO PRIORITY APPLICATIONS This application is the subject of a joint patent application Ser. No. 09 / 24 / 2018 filed on September 24, 2018 entitled "Multilayer Bumps in Bulk Acoustic Wave Devices." This application claims the benefit of priority to U.S. Provisional Patent Application No. 62 / 735,523, entitled "Frame." In addition, the company filed a patent application on November 11, 2018 entitled "Multilayered Bulk Acoustic Wave Devices" This application claims the benefit of priority to U.S. Provisional Patent Application No. 62 / 760,470, entitled "Raised Frame." No. 6,399,433, the disclosures of each of which are incorporated herein by reference in their entirety.

[0002] FIELD OF THE DISCLOSURE Embodiments of the present disclosure relate to acoustic wave devices, and more particularly to bulk acoustic wave devices. . [Background technology]

[0003] Acoustic wave filters can be implemented in radio frequency electronic systems. The filters in the radio frequency front end of the handset include one or more acoustic wave filters. A number of acoustic wave filters can be arranged as a multiplexer. For example, Two acoustic wave filters can be arranged as a duplexer.

[0004] An acoustic wave filter is a device that includes multiple resonators arranged to filter radio frequency signals. Examples of acoustic wave filters include surface acoustic wave (SAW) filters and bulk acoustic wave (BAW) filters. BAW filters include BAW resonators. AW resonators are thin film bulk acoustic wave resonators (FBARs) and solid mounted resonators (SM R). In a BAW resonator, acoustic waves propagate in the bulk of the piezoelectric layer.

[0005] For high performance BAW filters, low insertion loss and low gamma loss are generally desirable. However, However, it is difficult to achieve the desired levels of insertion loss and gamma loss. Summary of the Invention

[0006] Each of the claimed innovations has several aspects, each of which is Not just one of the features is responsible for the desired attribute. Without further ado, a brief summary of some prominent features of the present disclosure is provided below.

[0007] One aspect of the present disclosure is a first electrode, a second electrode, and a sensor positioned between the first electrode and the second electrode. A bulk acoustic wave device including a piezoelectric layer and a multi-layer raised frame structure, The multi-layer raised framework is disposed in a middle area of ​​an active region of the bulk acoustic wave device. The multi-layer raised frame structure includes a first raised frame layer and a second raised frame layer. The first raised frame layer is positioned between the first electrode and the second electrode. The frame layer has a lower acoustic impedance than the first electrode. The second raised frame layer , overlapping the first raised frame layer in the active area.

[0008] The first raised frame layer aligns the frequency of the raised frame mode to the main frequency of the bulk acoustic wave device. The acoustic impedance of the first raised frame layer can be moved away from the resonant frequency. The acoustic impedance of the first raised frame layer may be lower than the acoustic impedance of the piezoelectric layer. The first raised frame layer is positioned between the piezoelectric layer and the first electrode. The first raised frame layer is used to align the bulk acoustic wave devices along the edges of the active domain. The bulk acoustic wave device may be disposed on a raised frame domain of the semiconductor laser. The recessed frame domain may be between the frame domain and the intermediate area.

[0009] The multi-layer raised frame structure separates the active and passive regions of the bulk acoustic wave device. It is possible to block lateral energy leakage to the

[0010] The first electrode may include molybdenum. The first electrode may include tungsten. The first electrode may include ruthenium. The first electrode may include platinum. The first electrode may include iridium. 1 The electrode is made of any of molybdenum, tungsten, ruthenium, platinum and / or iridium. It may include a suitable alloy.

[0011] The second raised frame layer and the piezoelectric layer may be disposed on opposite sides of the second electrode. The raised frame layer may be positioned between the piezoelectric layer and the second electrode. The second raised frame layer may include: The second raised frame layer may have a higher density than the piezoelectric layer. The second raised frame layer may comprise the same material as the second electrode. The second raised frame layer may also comprise the same material as the first electrode.

[0012] The bulk acoustic wave device may include a passivation layer overlying the multi-layer raised frame layer. The bulk acoustic wave device may include a silicon dioxide layer overlying a multi-layer raised frame layer.

[0013] The bulk acoustic wave device may include an air cavity, where the air cavity and the pressure The electrode layer is located opposite the first electrode.

[0014] The bulk acoustic wave device may include an acoustic Bragg reflector. The emitter and the piezoelectric layer are on opposite sides of the first electrode.

[0015] Another aspect of the present disclosure is a first filter having a first passband and a second filter having a second passband. The first filter includes a bulk acoustic wave device. The bulk acoustic wave device has many layers outside the central area of ​​the active region of the bulk acoustic wave device. The multi-layer raised frame structure includes a first raised frame layer and a second raised frame layer. The piezoelectric layer includes a first raised frame layer positioned between the electrode and the piezoelectric layer. The first raised frame layer has a lower acoustic impedance than the first electrode. The first raised frame layer overlaps the first raised frame layer in the active area. The multi-layer raised frame structure is coupled to a first acoustic wave filter at a node. The passive waveguide is configured to move the elevated frame mode of the passive waveguide device out of the second passband.

[0016] The acoustic impedance of the first raised frame layer is lower than the acoustic impedance of the piezoelectric layer. The first elastic filter may further include a second bulk acoustic wave device. The bulk acoustic wave device is disposed outside a middle area of ​​the active area of ​​the second bulk acoustic wave device. a second multi-layer raised frame structure.

[0017] The second filter may be an acoustic wave filter. The multiplexer is coupled to the common node. The filter may include one or more additional filters.

[0018] The common node includes at least a first carrier associated with a first passband and a second passband. and receiving a carrier aggregation signal including a second carrier associated with the second carrier. can.

[0019] The reflection coefficient of the first acoustic wave filter in the second passband due to the multilayer raised frame mode may increase.

[0020] Another aspect of the present disclosure is a package substrate and a radio frequency signal receiving device on the package substrate. and an acoustic wave filter configured to filter the acoustic wave. and a radio frequency component coupled to and positioned on the package substrate. The acoustic wave filter and the radio frequency components are packaged in a common package. The acoustic wave filter includes a bulk acoustic wave device. The bulk acoustic wave device has a multi-layer raised fin outside the middle area of ​​the active region of the bulk acoustic wave device. The multi-layer raised frame structure includes a first raised frame layer and a second raised frame layer. The first raised frame layer is positioned between the electrode and the piezoelectric layer. The frame layer has a lower acoustic impedance than the first electrode. The second raised frame layer , overlapping the first raised frame layer in the active area.

[0021] The radio frequency component may be a radio frequency amplifier, such as a power amplifier or a low noise amplifier. The radio frequency component may include a radio frequency switch.

[0022] Another aspect of the present disclosure is a method for manufacturing a semiconductor device comprising: a first electrode; a second electrode; and a semiconductor device disposed between the first electrode and the second electrode. A bulk acoustic wave device comprising a piezoelectric layer and a multi-layer raised frame structure, The multi-layer raised framework is a central area of ​​the active region of the bulk acoustic wave device. The multi-layer raised frame structure includes a first raised frame layer and a second raised frame layer. The first raised frame layer is positioned between the first electrode and the second electrode. The frame layer has a lower acoustic impedance than the piezoelectric layer. The first raised frame layer overlaps the first raised frame layer in the active area.

[0023] The first raised frame layer aligns the frequencies of the raised frame modes to the dominant frequencies of the bulk acoustic wave devices. The first raised frame layer is made of silicon dioxide. The first raised frame layer may be positioned between the piezoelectric layer and the first electrode. The first raised frame layer supports the raised bulk acoustic wave device along the edges of the active domain. The bulk acoustic wave device may be disposed in a raised frame domain. It may include a recessed frame domain between the in and intermediate areas.

[0024] The multi-layer raised frame structure separates the active and passive regions of the bulk acoustic wave device. It is possible to block lateral energy leakage to the

[0025] The first electrode may include molybdenum. The first electrode may include tungsten. The first electrode may include ruthenium. It may include ruthenium.

[0026] The second raised frame layer and the piezoelectric layer may be disposed on opposite sides of the second electrode. The raised frame layer may be positioned between the piezoelectric layer and the second electrode. The second raised frame layer may include: The second raised frame layer may have a higher density than the piezoelectric layer. The second raised frame layer may comprise the same material as the second electrode. The second raised frame layer may also comprise the same material as the first electrode.

[0027] The bulk acoustic wave device may include a passivation layer overlying the multi-layer raised frame layer. The bulk acoustic wave device may include a silicon dioxide layer overlying a multi-layer raised frame layer.

[0028] The bulk acoustic wave device may include an air cavity, where the air cavity and the pressure The electrode layer is located opposite the first electrode.

[0029] The bulk acoustic wave device may include an acoustic Bragg reflector. The emitter and the piezoelectric layer are on opposite sides of the first electrode.

[0030] The bulk acoustic wave devices may include any suitable filters, multiplexers, and and / or modules.

[0031] For purposes of summarizing this disclosure, certain aspects, advantages and novel features of the innovation are set forth herein. It will be understood that not all such advantages may be realized in any one This is not achieved in any particular embodiment of the present invention. , any one advantage or group of advantages taught herein, or any other advantages taught or suggested herein. It may be embodied or carried out in a manner that achieves or optimizes, but does not necessarily achieve, the Cut. [Brief description of the drawings]

[0032] Embodiments of the present disclosure are described below by way of non-limiting examples with reference to the accompanying drawings.

[0033] [Figure 1] FIG. 1 is a top view of a dual ridge frame bulk acoustic wave device. [Diagram 2] FIG. 1 is a cross-sectional view of a dual ridge frame bulk acoustic wave device according to an embodiment. [Diagram 3] 1 is a cross-sectional view of a dual ridge frame bulk acoustic wave device according to another embodiment. [Figure 4] 1 is a cross-sectional view of a dual ridge frame bulk acoustic wave device according to another embodiment. [Diagram 5] 1 is a cross-sectional view of a dual ridge frame bulk acoustic wave device according to another embodiment. [Figure 6] 1 is a cross-sectional view of a dual ridge frame bulk acoustic wave device according to another embodiment. [Figure 7A] 1 is a cross-sectional view of a dual ridge frame bulk acoustic wave device according to another embodiment. [Figure 7B] 1 is a cross-sectional view of a dual ridge frame bulk acoustic wave device according to another embodiment. [Figure 8] 1 is a cross-sectional view of a dual ridge frame bulk acoustic wave device according to another embodiment. [Figure 9] 1 is a cross-sectional view of a dual ridge frame bulk acoustic wave device according to another embodiment. [Figure 10] 10A, 10B, and 10C are cross-sectional views of one, another, and a dual-ridge frame bulk acoustic wave device, respectively, in accordance with an embodiment. [Figure 11A] 10B is a graph comparing the quality factors of the bulk acoustic wave devices of FIGS. 10A, 10B, and 10C. [Figure 11B] 11A is a graph comparing the conductance of the bulk acoustic wave devices of FIGS. 10A, 10B, and 10C over a larger frequency range than FIG. 11A. [Figure 12] FIG. 1 is a schematic diagram of an example of an elastic wave ladder filter. [Figure 13] 13A and 13B are schematic diagrams of an example of a duplexer. [Figure 14] FIG. 1 is a schematic block diagram of a module including an antenna switch and a duplexer including one or more multi-layer raised frame bulk acoustic wave devices. [Figure 15]15A is a schematic block diagram of a module including a power amplifier, a radio frequency switch, and a duplexer including one or more multi-layer raised frame bulk acoustic wave devices; and FIG 15B is a schematic block diagram of a module including a low noise amplifier, a radio frequency switch, and an acoustic wave filter including one or more multi-layer raised frame bulk acoustic wave devices. [Figure 16] FIG. 1 is a schematic block diagram of a module including a power amplifier, a radio frequency switch, and a duplexer including one or more multi-layer raised frame bulk acoustic wave devices. [Figure 17] Figure 17A is a schematic block diagram of one wireless communication device including a filter that includes one or more multi-layer raised frame bulk acoustic wave devices, and Figure 17B is a schematic block diagram of another wireless communication device including a filter that includes one or more multi-layer raised frame bulk acoustic wave devices. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0034] The following detailed description of certain embodiments represents various descriptions of specific embodiments. However, the innovations described herein are defined and covered, for example, by the claims. In this description, the same reference numerals refer to the same Reference is made to the drawings which may show identical or functionally similar elements. It is understood that the drawings It is to be further understood that elements depicted in the drawings are not necessarily to scale. The embodiments may include more elements than are shown in the drawings and / or may include more elements than are shown in the drawings. Additionally, some embodiments may include a subset of features from two or more of the drawings. Any suitable combination may be incorporated.

[0035] To develop a high-performance bulk acoustic wave (BAW) filter, it is necessary to reduce the insertion loss while In general, it is desirable to reduce gamma loss. W resonators typically have a high quality factor (Q). To achieve a high Q, The raised frame, also called the boundary ring, separates the active domain of the BAW resonator from the BAW coaxial cable. It can block lateral energy leakage into the passive domain of the oscillator. Rehm can improve the Q, but it can trap all the leakage energy. The raised frame is relatively weak below the main resonant frequency of the BAW resonator. This can generate large spurious modes, also called raised frame modes. This can cause gamma degradation in the carrier aggregation band of the filter. Low gamma loss reduces the incidence of raised frame spurious modes (RaF modes). This can be achieved by moving the 10Gb / s ...

[0036] Aspects of the present disclosure provide a multi-layer raised frame that can achieve low insertion loss and low gamma loss. The present invention relates to a bulk acoustic wave resonator including a multi-layer raised frame structure. The first raised frame layer includes a frame layer and a second raised frame layer. The first raised frame layer supports an opposing electrode on the piezoelectric layer. A low acoustic impedance material, such as silicon dioxide, is placed between the poles. and disposing an acoustic impedance material between the top electrode and the piezoelectric layer of the bulk acoustic wave resonator. The multi-layer raised frame structure is placed along the periphery of the active area of ​​the bulk acoustic wave resonator. The second raised frame layer may include a relatively heavy material. The raised frame layer may be of the same material as the electrodes of the bulk acoustic wave resonator.

[0037] Generates relatively strong raised frame spurious modes due to low acoustic impedance The frequency of the multi-layer raised frame domain is controlled by the first raised frame layer with low acoustic impedance. The acoustic properties of the raised frame domain can be significantly lower than those of a similar raised frame domain that does not exist. Due to impedance, the raised frame mode for the multi-layer raised frame structure is reduced by gamma loss. It will be outside the carrier aggregation band so as not to cause loss of For example, in carrier aggregation applications, the multiplexer A common node arranged to receive a carrier aggregation signal; a first filter having a passband associated with a first carrier of the transmission signal; a second carrier of the carrier aggregation signal coupled to the first filter in the and a second filter having a second passband associated with the first filter. A multi-layer raised frame structure according to one embodiment of the present disclosure may include a BAW resonator. The BAW resonator having the raised frame structure is arranged to transmit the first filter in the passband of the second filter. This can increase the gamma for the filter.

[0038] Additionally, due to the relatively low frequency of the multi-layer raised frame structure, the multi-layer raised frame The difference in effective acoustic impedance between the active domain and the second raised frame layer The multi-layer raised frame structure is larger than that for a raised frame structure with a single layer corresponding to the multi-layer raised frame. The beam structure provides high mode reflection of lateral energy away from the primary modes to anti-resonant frequencies. This reduces mode conversion to other nearby transverse modes. Therefore, the Q is significantly It may increase.

[0039] The embodiments disclosed herein are directed to a dual raised frame structure having two raised frame layers. Although any suitable principles and advantages described herein may be described with reference to , can be applied to multi-layer raised frame structures containing two or more raised frame layers.

[0040] Several example bulk acoustic resonators having dual raised frame layers are described below. Any suitable principles and advantages of the dual raised frame layer may be incorporated into the multi-layer raised frame bulk acoustic wave device. The devices may be implemented together in a single device.

[0041] FIG. 1 is a plan view of a dual-ridge frame bulk acoustic wave device. In addition, the bulk acoustic wave device has a raised area around the periphery of the active area of ​​the bulk acoustic wave device. The raised frame zone 12 includes a border ring 14. The raised frame zone 12 may, in certain instances, be A double raised frame structure may be present in the raised frame zone 12. The raised frame structure may be any suitable embodiment of the dual raised frame bulk acoustic wave device of FIGS. The dual-ridge frame structure can be implemented according to the principles and advantages of the bulk acoustic wave The raised frame layer is located outside the intermediate area 14 of the active area of ​​the device. The metal electrodes may extend over the frame zone 12. The metal electrodes and the raised frame layer in the raised frame zone 12 are shown. For example, silicon dioxide may be included over the metal electrodes and the raised frame layer. A metal electrode and raised frame layer may be included over the bulk acoustic wave device. It is also shown that the piezoelectric layer 16 of the chair underlies the metal electrodes and raised frame layer.

[0042] Several embodiments of the dual ridge frame bulk acoustic wave device are shown in FIG. 2 to 9 are cross-sectional views of a double-ridge frame bulk acoustic wave The cross sections of the device taken along the line A to A' in FIG. Any suitable combination of features of the acoustic wave devices may be combined with each other. Any of the bulk acoustic wave devices disclosed herein may be used to filter radio frequency signals. The resonator may be a bulk acoustic wave resonator in a filter arranged to accommodate the resonator.

[0043] FIG. 2 is a cross-sectional view of a dual-ridge frame bulk acoustic wave device 20 according to one embodiment. As shown, the dual ridge frame bulk elastic device 20 includes a piezoelectric layer 16, a first electrode 2, and a second electrode 3. 1, second electrode 22, first raised frame layer 23, second raised frame layer 24, silicon substrate 2 5, an air cavity 26 and a silicon dioxide layer 27.

[0044] The piezoelectric layer 16 is disposed between the first electrode 21 and the second electrode 22. The piezoelectric layer 16 is made of a nitride. It may be an aluminum (AlN) layer or any other suitable piezoelectric layer. The active area or domain of the piezoelectric layer 16 is connected to the first electrode 21 and The first electrode 21 is defined by a portion overlapping both the first electrode 21 and the second electrode 22. For example, the first electrode 21 may be made of molybdenum (Mo), tungsten (W), or the like. (W), ruthenium (Ru), indium (Ir), platinum (Pt), Ir / Pt, or The second electrode 22 may include any suitable alloy and / or combination of these. The second electrode 22 may also have a relatively high acoustic impedance. It may be formed from the same material as the first electrode 21.

[0045] The dual raised frame structure of the bulk acoustic wave device 20 includes a first raised frame layer 23 and a second raised frame layer 24. The first raised frame layer 23 and the second raised frame layer 24 are , overlap each other in the active area of ​​the bulk acoustic wave device 20. The raised frame domain of the substrate 20 is connected to the active domain of the bulk acoustic wave device 20. The double-ridge frame structure is defined by a portion of the double-ridge frame structure. At least a portion of the bulk acoustic wave device 20 is included in the active area. Frame structures can significantly improve Q due to the highly efficient reflection of lateral energy. can.

[0046] The first raised frame layer 23 is positioned between the first electrode 21 and the second electrode 22. As shown in FIG. 2, a first raised frame layer 23 is positioned between the piezoelectric layer 16 and the second electrode 22. The first raised frame layer 23 is a low acoustic impedance material. The impedance material has a lower acoustic impedance than the first electrode 21. The impedance material has a lower acoustic impedance than the second electrode 22. The piezoelectric material may have a lower acoustic impedance than the piezoelectric layer 16. The raised frame layer 23 may be a silicon dioxide (SiO2) layer. The first raised surface of silicon dioxide is used in a variety of bulk acoustic wave devices. The first raised frame layer 23 is relatively easy to manufacture. Silicon nitride (SiN), silicon carbide (SiC), or any other suitable low acoustic impedance layer. The first raised frame layer 23 may be a relatively low density. The framing layer 23 is the active region of the bulk acoustic wave device 20 as shown in FIG. This may be for manufacturing reasons in certain instances.

[0047] The first raised frame layer 23 defines an effective raised frame domain for the bulk acoustic wave device 20. Electromechanical coupling coefficient (k 2 ) compared to a similar device in which the first raised frame layer 23 is absent. This reduces the excitation strength of the raised frame spurious modes. Furthermore, the first raised frame layer 23 reduces the frequency of the raised frame mode by By moving the frequency of the acoustic wave device 20 relatively far away from the primary resonant frequency of the acoustic wave device 20, This can contribute to gamma loss without causing any significant effect.

[0048] As shown, the second raised frame layer 24 is disposed over the active area of ​​the bulk acoustic wave device 20. The second raised frame layer 24 overlaps the first raised frame layer 23 in the region. This may be convenient from a manufacturing point of view. The second raised frame layer 24 may be a relatively dense material. For example, the second raised frame layer 24 may be made of molybdenum. butene (Mo), tungsten (W), ruthenium (Ru), etc., or any suitable of these. The second raised frame layer 24 may comprise a metal alloy. The raised frame layer 24 may be any suitable non-metallic material having a relatively high density. The density of the rubber layer 24 is similar to or greater than the density of the second electrode 22. Layer 24 may have a relatively high acoustic impedance.

[0049] The second raised frame layer 24 supports the bulk acoustic wave device 20 in the raised frame domain. Thus, the bulk acoustic wave device 20 has a raised frame domain. The height at the active domain is different from that at the other parts of the active domain, e.g. The second raised frame layer 24 is formed to cover the second electrode 22. This can be relatively easy from a manufacturing standpoint. However, some other In an embodiment, the second raised frame layer is at a different location in the raised frame domain. It may be included.

[0050] In the bulk acoustic wave device 20, the silicon dioxide layer 27 is connected to the second electrode 22 and the second raised portion. A silicon dioxide layer 27 is included over the raised frame layer 24. Different regions of the substrate 20 may be formed to have different thicknesses. For example, As shown in FIG. 2, the silicon dioxide layer 27 is thinned in the recessed frame domain. Instead of and / or in addition to the silicon dioxide layer 27, any suitable A passivation layer may be included.

[0051] The dual-ridge frame bulk acoustic wave device 20 is an FBAR. The air cavity 26 , contained beneath the first electrode 21. An air cavity 26 is formed between the first electrode 21 and the silicon substrate. Instead of the silicon substrate 25, other suitable substrates may be used. Alternatively, one or more layers, such as a passivation layer, may be implemented to separate the first electrode 21 from the first electrode 22. It can be positioned between the silicon substrate 25.

[0052] Although the bulk acoustic wave device 20 is an FBAR, any of the devices described herein may be The relevant principles and advantages can also be applied to solid mounted resonators (SMRs).

[0053] FIG. 3 is a cross-sectional view of a dual-ridge frame bulk acoustic wave device 30 according to one embodiment. The dual-ridge frame bulk acoustic wave device 30 is the dual-ridge frame bulk acoustic wave device of FIG. 1 is similar to device 20, except that bulk acoustic wave device 30 is an SMR instead of an FBAR. In the bulk acoustic wave device 30, the solid acoustic mirror is and a silicon substrate 35. The acoustic mirror shown is an acoustic Bragg reflector. The illustrated acoustic Bragg reflector 32 includes alternating low impedance layers 3 3 and high impedance layer 34. By way of example, Bragg reflector 32 may be Also, a silicon dioxide layer as the low impedance layer 33 and a silicon dioxide layer as the high impedance layer 34 are Any other suitable features of the SMR may include a multi-layer raised frame ballast. Alternatively or additionally, the present invention may be implemented in a bulk acoustic wave device.

[0054] FIG. 4 is a cross-sectional view of a dual-ridge frame bulk acoustic wave device 40 according to one embodiment. The dual-ridge frame bulk acoustic wave device 40 is the dual-ridge frame bulk acoustic wave device of FIG. Bulk acoustic wave device 40 is similar to device 20, except that silicon dioxide layer 27 is 1, except that the recessed frame domain is omitted and is not present in the bulk acoustic wave device 40 .

[0055] FIG. 5 is a cross-sectional view of a dual-ridge frame bulk acoustic wave device 50 according to one embodiment. The dual-ridge frame bulk acoustic wave device 50 is the dual-ridge frame bulk acoustic wave device of FIG. 40, except that the first raised frame layer 53 of the bulk acoustic wave device 50 is 5. The first raised frame layer 23 of the bulk acoustic wave device 40 is different from the first raised frame layer 23 of the bulk acoustic wave device 40 shown in FIG. Thus, the first raised frame layer 53 spans the raised frame domain. Layer 53 does not extend beyond the active area of ​​bulk acoustic wave device 50 .

[0056] FIG. 6 is a cross-sectional view of a dual-ridge frame bulk acoustic wave device 60 according to one embodiment. The dual-ridge frame bulk acoustic wave device 60 is the dual-ridge frame bulk acoustic wave device of FIG. The bulk acoustic wave device 60 is similar to the device 40, except that the second electrode 62 of the bulk acoustic wave device The second electrode 62 is different from the second electrode 22 of the device 40 in that different regions have different The thin area of ​​the second electrode 62 corresponds to a recessed portion of the bulk acoustic wave device 60. Implement a real domain.

[0057] FIG. 7A is a cross-sectional view of a dual-ridge frame bulk acoustic wave device 70 according to one embodiment. The dual-ridge frame bulk acoustic wave device 70 is the same as the dual-ridge frame bulk acoustic wave device of FIG. Similar to device 40, bulk acoustic wave device 70 has two raised frame domains. The bulk acoustic wave device 70 includes a first raised frame domain RaF and The first raised frame layer 73 is included in the raised frame domain RaF3. The first raised frame domain RaF in the substrate 70 corresponds to the bulk acoustic wave device 40 of FIG. The first raised frame layer 73 and the second raised frame layer 74 are similar to the raised frame domains in the first raised frame layer 73 and the second raised frame layer 74. The first raised frame layer 73 is included in the first raised frame domain RaF. The first raised frame layer 7 may include any suitable features of the first raised frame layer 23 of FIG. 3 is thinned in the second raised frame domain RaF3. Here, the first raised frame A rubber layer 73 and a second electrode 72 are arranged to cover the piezoelectric layer 16 .

[0058] The second raised frame region RaF3 may be referred to as a recessed raised frame region. 4. The second raised frame layer 24 has a different shape than the second electrode 22 of FIG. The first raised frame layer 73 is located outside the raised frame domain RaF3. The raised frame domain RaF3 consists of (1) the middle area of ​​the active region and (2) the first raised The acoustic impedance of the incident beam is different from that of the incident beam domain. This causes spurious modes The first raised frame region may be the first region in a plan view of the bulk acoustic wave device 70. 2. The raised frame area may be enclosed.

[0059] FIG. 7B is a cross-sectional view of a dual-ridge frame bulk acoustic wave device 75 according to one embodiment. The dual-ridge frame bulk elastic device 75 is the dual-ridge frame bulk elastic device of FIG. Bulk acoustic wave device 75 is similar to bulk acoustic wave device 70, but has two raised frame domains. 7B, except that it includes a second raised frame layer 77 extending over the inner periphery of the first raised frame layer 77. As shown in FIG. The second raised frame layer 77 has a first raised frame domain RaF and a second raised frame The first raised frame layer 73 is included in the domain RaF3. The second raised frame layer 77 is thinned in the second raised frame domain. First raised frame domain RaF and second raised frame domain in wave device 75 The RaF3 has substantially the same thickness on both sides. The raised frame domains can help suppress spurious modes.

[0060] FIG. 8 is a cross-sectional view of a dual-ridge frame bulk acoustic wave device 80 according to one embodiment. The dual-ridge frame bulk acoustic wave device 80 is similar to the dual-ridge frame bulk acoustic wave device of FIG. 50, but in these devices the first raised frame layer is at a different location. In the bulk acoustic wave device 80, the first raised frame layer 83 is The first raised frame layer 83 is positioned between the first electrode 21 and the piezoelectric layer 86. 86 and the first electrode 21. The first raised frame layer 83 is in physical contact with the first raised frame The first raised frame layer 83 may function similarly to the first raised frame layer 23. Piezoelectric layer 86 may include any suitable feature in cross-section from piezoelectric layer 16 of FIG. It has a shape as follows.

[0061] FIG. 9 is a cross-sectional view of a dual-ridge frame bulk acoustic wave device 90 according to one embodiment. The dual-ridge frame bulk acoustic wave device 90 is similar to the dual-ridge frame bulk acoustic wave device of FIG. 8. The device is similar to device 80, except that the second electrode and the piezoelectric layer have different shapes in cross section. As shown in FIG. 9, the second electrode 92 is disposed on the second raised frame layer 24. It has a planar top surface. A planar top surface can be easily manufactured in certain instances.

[0062] As mentioned above, the dual-ridge frame bulk acoustic wave devices described herein are similar to the single-layered ridge frame bulk acoustic wave devices described herein. 10A-10C show a single raised frame device. Rise frame bulk acoustic wave devices and dual rise frame bulk acoustic wave devices 11A-11B show a multi-layer bulk acoustic wave device in accordance with the present invention. 13 is a graph comparing the Q of bulk acoustic wave devices.

[0063] 10A is a cross-sectional view of a raised frame bulk acoustic wave device 100. The bulk acoustic wave device 100 includes a single layer raised frame structure. The raised frame structure of 00 includes a raised frame layer 23 .

[0064] 10B is a cross-sectional view of the raised frame bulk acoustic wave device 104. The bulk acoustic wave device 104 includes a single layer raised framework. The raised frame structure at 104 includes raised frame layer 24 .

[0065] 10C is a cross-sectional view of a raised frame bulk acoustic wave device 108. Bulk acoustic wave device 108 includes both raised frame layer 23 and raised frame layer 24. Includes a double layer raised frame structure.

[0066] FIG. 11A illustrates the bulk acoustic wave devices 100 and 102 of FIGS. 10A, 10B, and 10C, respectively. 1 is a graph comparing the Q of bulk acoustic wave device 104 and 108. can provide better lateral energy reflection than the polarized wave devices 104 and 108. FIG. 11A shows a bulk acoustic wave device 108 in accordance with the present invention. It is shown that a higher Q can be achieved.

[0067] FIG. 11B illustrates the bulk acoustic wave devices 100, 102 of FIGS. 10A, 10B, and 10C, respectively. Conductance in decibels (dB) of 0.4 and 108 at higher frequencies than in Figure 11A. FIG. 11B is a graph comparing the Bulk Acoustic Wave device 104 over a range of frequencies. Frequency difference from the resonant frequency F D3 The relatively large noise in The wave device 100 has a frequency difference F D2 Relatively large noise in and the bulk acoustic wave device 108 is at a frequency difference F from the resonant frequency. D1 In relative terms These surrounding noises for bulk elastic devices are shown to be significantly larger than those for bulk elastic devices. The relatively large noise in the wavenumber difference corresponds to the raised frame spurious modes. As shown in FIG. 1B, these frequency differences are related by the following relationship: F D1 >F D2 >F D3 Meet The frequency difference F D3 is close to the desired resonant frequency for various applications. For example, in the context of a multiplexer, the frequency difference F away from the resonant frequency D3 To Noise in the filter can affect the performance of adjacent filters.

[0068] FIG. 11B illustrates the raised frame spurious modes of the bulk acoustic wave device 108. The raised frame spurious modes of the acoustic wave devices 100 and 104 are closer to the resonant frequency than the As shown in FIG. 11B, the raised frame spurious mode and The resonant frequency of the bulk acoustic wave device 108 is approximately 1 gigahertz (GHz). Therefore, such spurious modes of the raised frame are considered to be bulk acoustic waves. Filtering radio frequency signals having frequencies similar to the resonant frequency of the device 108 Other acoustic wave filters arranged to accommodate the other acoustic wave filters (e.g., one or more other acoustic wave filters of a multiplexer) This is useful for carrier aggregation applications, for example. This can be advantageous in the application.

[0069] FIG. 11B illustrates a bulk acoustic wave device 108 in accordance with the present invention. The raised frame spurious modes have smaller amplitudes than the raised frame spurious modes of the This indicates that.

[0070] The multilayer raised frame bulk acoustic wave resonators disclosed herein are suitable for implementation in acoustic wave filters. In a given application, the acoustic wave filter may be configured to operate in a radio frequency band. a bandpass filter arranged to pass frequencies outside the radio frequency band and attenuate frequencies outside the radio frequency band Two or more acoustic wave filters may be coupled together at a common node. It may be arranged as a multiplexer, such as a duplexer.

[0071] FIG. 12 is a schematic diagram of an example of an acoustic wave ladder filter 120. The acoustic wave ladder filter 120 may be a transmit filter or a receive filter. The filter may be a bandpass filter arranged to filter radio frequency signals. The passive filter 120 is connected to the radio frequency input / output port RF I / O and antenna port ANT Series resonators R1, R3, R5, R7 and R9 coupled between Includes R2, R4, R6 and R8. Radio frequency input / output port RF I / O The transmission filter The port number may be a transmit port in a filter, or a receive port in a receive filter. One or more of the acoustic wave resonators may be a multi-layer ridge structure according to any suitable principles and advantages described herein. The acoustic wave ladder filter may be a frame bulk acoustic wave resonator. It may include a series resonator and any suitable number of shunt resonators.

[0072] The acoustic wave filters are based on lattice topology or hybrid ladder and lattice topology. The filter may be arranged in any other suitable filter topology, such as Bulk acoustic wave resonators according to any suitable principles and advantages may be implemented in bandpass filters. In some other applications, any of the methods disclosed herein may be used. Bulk acoustic wave resonators, following appropriate principles and advantages, can be implemented into bandstop filters. Cut.

[0073] 13A is a schematic diagram of an example of a duplexer 130. The duplexer 130 includes: A transmit filter 131 and a receive filter 132 are coupled to each other in the antenna node ANT. 32. A shunt inductor L1 can be connected to the antenna node ANT. Both the transmit filter 131 and the receive filter 132 are in the duplexer 130. This is an elastic wave ladder filter.

[0074] The transmit filter 131 filters a radio frequency signal and outputs a filtered radio A frequency signal can be applied to the antenna node ANT. A series inductor L2 is connected to The filter 131 may be coupled between a transmit input node TX and the acoustic wave resonator. The illustrated transmit filter 131 includes acoustic wave resonators T01 to T09. One or more of the multi-layer raised frame bulk according to any suitable principles and advantages disclosed herein. The receiving filter shown in the figure includes acoustic wave resonators R01 to R09. One or more of these resonators may be multi-layered according to any suitable principles and advantages disclosed herein. The receiving filter may be a layer-raised frame bulk acoustic wave resonator. The radio frequency signal received at the series inductor L 3 can be coupled between the resonator and the receive output node RX. An output node RX provides the radio frequency receive signal.

[0075] FIG. 13B is a schematic diagram of a multiplexer 135 including an acoustic wave filter according to an embodiment. FIG. 1 is a diagram of a multiplexer 135 that includes multiple inputs coupled together at a common node COM. The plurality of filters may include any suitable number of filters. For example, 3 filters, 4 filters, 5 filters, 6 filters, It may contain seven filters, eight filters, or more filters. Some or all of the wave filters may be acoustic wave filters. , 136B and 136N respectively denote a common node COM and an input / output node RF I / O 1. RF I / O2 and RF I / ON is connected between each of them.

[0076] In some examples, all of the filters in multiplexer 135 are receive filters. According to some alternatives, all of the filters in the multiplexer 135 can be transmitted. In various applications, the multiplexer 135 may be a The multiplexer may include one or more transmit filters and one or more receive filters. Lexer 135 may include any suitable number of transmit filters and any suitable number of receive filters. Each of the illustrated filters may be a bandpass filter having a different corresponding passband. It can be used as a filter.

[0077] The multiplexer 135 includes a filter 136A having a fixed connection to a common node COM. ~136N is shown to perform hard multiplexing. Some other applications In this case, one or more of the filters of the multiplexer are connected to a common node via a corresponding switch. Any such filter may be electrically connected to the filter. The present invention may include bulk acoustic wave resonators according to any suitable principles and advantages.

[0078] The first filter 136A has a first passband and filters a radio frequency signal. The first filter 136A is an acoustic wave filter arranged to The second filter may include one or more bulk acoustic wave resonators according to any suitable principles and advantages. The first filter 136A has one or more bulk elastic moduli. The multi-layer raised frame structure of the bulk acoustic wave resonator includes a raised frame structure of the one or more bulk acoustic wave resonators. The second passband can be moved away from the second passband. Increasing the reflection coefficient (gamma) of the first filter 136A in the passband of filter 136B The multi-layer raised frame structure of the bulk acoustic wave resonator of the first filter 136A can be The structure may also include a raised frame mode that is coupled to one or more other filters of multiplexer 135. Move the filter away from the passband.

[0079] In certain examples, the common node COM of the multiplexer 135 is a carrier aggregation The carrier aggregation signal is arranged to receive at least one of the carrier aggregation signals. , a first carrier associated with a first passband of the first filter 136A, and a second filter and a second carrier associated with a second passband of the first filter 136A. The multi-layer raised frame structure of the bulk acoustic wave resonator is A first filter in a second passband of the second filter 136B associated with the second carrier The reflection coefficient of 136A can be maintained and / or increased.

[0080] The filters 136B to 136N of the multiplexer 135 are each one or more acoustic wave filters. One or more bulk acoustic wave resonators including at least one bulk acoustic wave resonator having a multi-layer raised framework. Acoustic wave filters, one or more LC filters, one or more hybrid acoustic wave LC filters , or any suitable combination thereof.

[0081] The multi-layer raised frame bulk acoustic wave resonators disclosed herein are suitable for use in a variety of packaged modules. The bulk acoustic wave devices disclosed herein can be implemented in any suitable form. Some example packaged modules in which the principles and advantages may be implemented are described below. The example packaged module may include a package that encapsulates the circuit elements shown. The circuit elements shown may be disposed on a common package substrate. The plate may be, for example, a laminate substrate. Figures 14, 15A, 15B and 16 show certain embodiments. FIG. 1 is a schematic block diagram of an example packaged module according to the present invention. The module may include one or more power amplifiers and / or one or more low noise amplifiers. Any suitable combination of the features of the modules may be combined. The duplexer can be packaged together in the packages of FIGS. The example of the module shown in FIG. 1 may include any suitable module that includes multiple acoustic wave filters coupled to a common node. Any other suitable multiplexer may be implemented in place of one or more duplexers. For example, in certain applications, a quadplexer may be implemented. Alternatively or additionally, one or more filters of the packaged module may be connected to a multiplexer. The filters may be arranged as transmit or receive filters not included.

[0082] FIG. 14 shows a module including duplexers 141A to 141N and an antenna switch 142. 1 is a schematic block diagram of a controller 140. The filter may include any suitable number of multi-layer raised structures according to any suitable principles and advantages described herein. Any suitable number of duplexers 141A-1 may include frame-type bulk acoustic wave resonators. The antenna switch 142 can be implemented with duplexers 141A to 141N. 41N. The antenna switch 142 may have a certain number of throws corresponding to the number of The multiplexer may be electrically coupled to the antenna port of the module 140 .

[0083] FIG. 15A illustrates a power amplifier 152, a radio frequency switch 154, and one or more embodiments of the 1 is a schematic block diagram of a module 150 including duplexers 141A to 141N according to the present invention. The power amplifier 152 can amplify the radio frequency signal. The switch 154 may be a multi-throw radio frequency switch. The radio frequency switch 154 is The output of the amplifier 152 is electrically connected to a selected transmission filter of the duplexer 141A to 141N. One or more filters of the duplexers 141A to 141N can be coupled to The present invention relates to a method for manufacturing a raised frame having a multi-layer structure, comprising: Any suitable number of duplexers 141A to 141N may be used. It can be implemented.

[0084] FIG. 15B illustrates filters 156A-156N, a radio frequency switch 157, and an embodiment of the FIG. 1 is a schematic block diagram of a module 155 including a low noise amplifier 158 according to an embodiment. One or more of the filters 156A-156N may be any suitable filter as disclosed herein. Any suitable number of multi-layer raised frame bulk acoustic wave resonators according to the principles and advantages may be included. Any suitable number of filters 156A-156N may be implemented. 156A to 156N are receive filters. In some embodiments (not illustrated), One or more of the filters 156A-156N are included in a multiplexer that also includes a transmit filter. The radio frequency switch 157 may be a multi-throw radio frequency switch. The frequency switch 157 switches the output of a selected filter from the filters 156A to 156N to a low frequency. The amplifier 157 may be electrically coupled to the noise amplifier 157. In some embodiments (not illustrated), In a given application, multiple low noise amplifiers can be implemented. In certain applications, it may include a diversity reception feature.

[0085] FIG. 16 illustrates a power amplifier 152, a radio frequency switch 154, and, in accordance with one or more embodiments, A duplexer 14 including such a multi-layer raised frame bulk acoustic wave device, as well as an antenna strip 1 is a schematic block diagram of a module 160 including a switch 142. , multiple elements of module 140, and multiple elements of module 150.

[0086] One or more filters having any suitable number of multi-layer raised frame bulk elastic devices may be 17A is a block diagram of any of the wireless communication devices disclosed herein. A frame having one or more multi-layer raised frame bulk acoustic wave resonators according to the principles and advantages of the present invention. 1 is a schematic block diagram of a wireless communication device 170 including a filter 173. The wireless communication device 170 may be any suitable wireless communication device. For example, the wireless communication device 170 The wireless communication device 1 may be a mobile phone such as a smartphone. 70 includes an antenna 171, an RF front end 172 including a filter 173, a transceiver 1 74, a processor 175, a memory 176 and a user interface 177. The amplifier 171 can transmit an RF signal provided by the RF front end 172. The antenna 171 provides the received RF signal to an RF front end 172 for processing. obtain.

[0087] The RF front end 172 includes one or more power amplifiers, one or more low noise amplifiers, R F switch, receive filter, transmit filter, duplex filter, multiplexer A filter, a diplexer or other frequency multiplexing circuit filter, or any suitable combination thereof. The RF front end 172 may include any suitable combination of The multi-layer raised frame disclosed herein can transmit and receive RF signals. The bulk acoustic wave resonators are implemented in the filter 173 of the RF front end 172. It is possible.

[0088] The RF transceiver 174 couples the RF signal to the RF front end for amplification and / or other processing. The RF transceiver 174 can also be provided to the RF front end 172. The RF transceiver 174 can process the RF signal provided by the low noise amplifier 72. In communication with the processor 175, the processor 175 may be a baseband processor. The processor 175 may include any suitable baseband processing unit for the wireless communication device 170. The memory 176 is accessible to the processor 175. The memory 176 may store any suitable data for the wireless communication device 170. The processor 175 also communicates with a user interface 177. Interface 177 may be any suitable user interface, such as a display. good.

[0089] FIG. 17B shows a filter 173 in the radio frequency front end 172 and a diversity receiver. FIG. 1 is a schematic diagram of a wireless communication device 180 including a second filter 183 in a receiving module 182. The wireless communication device 180 is similar to the wireless communication device 170 of FIG. 17B, ​​except that the line communication device 180 further includes a diversity receiving function. As shown in FIG. 1, the wireless communication device 180 includes a diversity antenna 181 and a diversity A die including a filter 183 is configured to process signals received by the die antenna 181. The diversity module 182, the radio frequency front end 172 and the diversity receiver The second filter 183 includes a transceiver 174 that communicates with both the first filter 183 and the second filter 184. The above provides a multi-layer raised frame structure according to any suitable principles and advantages disclosed herein. The piezoelectric element may include a bulk acoustic wave resonator.

[0090] The bulk acoustic wave devices disclosed herein are of the fifth generation (5th generation) in the frequency range 1 (FR1). G) Configured to filter radio frequency signals in the New Radio (NR) operating band FR1 may be included in the filters and / or multiplexers defined in the current 5G NR specification. For example, 410 megahertz (MHz) to 7.125 gigahertz (GHz), as specified in Hz). Filtering radio frequency signals in the 5GNRFR1 operating band The filters arranged to filter the signal may be arranged according to any suitable principles and advantages disclosed herein. The device may include one or more bulk acoustic wave resonators implemented using a single crystal.

[0091] 5G NR carrier aggregation specifications may present technical challenges. Carrier aggregation is a technology that was developed for 4th generation (4G) long-term evolution (LTE ) may have a wider bandwidth and / or channel spacing than carrier aggregation. The carrier aggregation bandwidth in 5GFR1 applications is 120MHz. z in the range of 120 MHz to 400 MHz, such as in the range of 200 MHz to 120 MHz. Carrier spacing in 5GFR1 applications can be up to 100 MHz. The bulk acoustic wave resonator having the multi-layer raised frame structure disclosed herein provides low insertion loss and Such a raised frame for a bulk acoustic wave resonator can achieve low gamma loss. The frequency of the mode is shifted significantly away from the resonant frequency of the bulk acoustic wave resonator. Therefore, wide carrier aggregation within FR1 in the 5G specification is possible. The bandwidth and / or channel spacing may be increased by the raised frame mode, or by the carrier aggregation This allows the LTE-2000 to exist outside the LTE band. Gamma degradation in the operating band of other carriers can be reduced and / or eliminated. In some instances, gamma is used to determine the operating band of other carriers in carrier aggregation. It may increase in

[0092] Any of the above described embodiments may relate to a mobile device such as a cellular handset. The principles and advantages of the embodiments may be implemented in any of the embodiments described herein. Any system, such as any uplink wireless communication device, that may benefit from The teachings herein may be applied to a variety of systems or devices. Although the present disclosure includes several example embodiments, the teachings described herein are , and can be applied to a variety of structures. All of the principles and advantages described herein are Frequency range from 0 kHz to 300 GHz, for example from about 450 MHz to 8.5 GHz The present invention can be implemented in conjunction with RF circuitry configured to process signals in a range of frequencies. .

[0093] Aspects of the present disclosure may be implemented in a variety of electronic devices. Examples include consumer electronic products, packaged radio frequency modules, and the like. components, uplink wireless communication devices, wireless communication infrastructure, electronic test equipment Examples of electronic devices include, but are not limited to, portable electronic devices such as smartphones. Wearable computing devices such as phones, smart watches or earpieces , telephones, televisions, computer monitors, computers, modems, handheld computers computers, laptop computers, tablet computers, microwave ovens, refrigerators, In-vehicle electronic systems such as car electronic systems, stereo systems, digital music players , radios, cameras such as digital cameras, portable memory chips, washing machines, dryers, Laundry / drying machines, copiers, facsimile machines, scanners, multi-function peripheral devices, watches, This includes, but is not limited to, watches, etc. Additionally, electronic devices may also include unfinished products. .

[0094] Throughout this specification and claims, unless the context indicates otherwise, The terms "comprise," "include," "includes," and the like are used to imply inclusion as opposed to an exclusive or exhaustive meaning. It should be interpreted in a general sense, i.e. "including but not limited to." In particular, "can," "may," "may," "may," "for example," and "of Conditional language herein, such as "such as" is generally used unless specifically stated otherwise. or unless otherwise understood by the context of use, a given embodiment may be used in conjunction with a given feature. The term "contains" refers to a set of features, elements, and / or states that are intended to convey that the features, elements, and / or states are included while other embodiments do not include them. The word "coupled" as generally used herein means directly connected or one or more The term "connected" refers to two or more elements that may be connected through an intermediate element. As used generally herein, the word "connected" refers to a direct connection or to one or more intermediate elements. In addition, the word " The words "here", "above", "below" and similar meanings are used in this Application. When referring to the Application, the following terms are used: In the above detailed description, the singular or plural is used where the context permits. Each term herein may also include plural or singular.

[0095] Although certain embodiments have been described, it is to be understood that these embodiments have been presented by way of example only. As such, the disclosure is not intended to limit the scope of the present disclosure. The novel resonators, devices, modules, apparatus, methods and systems may be embodied in a variety of other forms. Further, the resonators, devices, modules, and apparatus described herein may be embodied in a semiconductor device. Various omissions, substitutions and changes in the form of the methods and systems may depart from the scope of the present disclosure. For example, although the blocks are presented in a given sequence, alternative embodiments may include Similar functions can be performed with different components and / or circuit topologies, and some blocks Locks can be deleted, moved, added, subdivided, combined, and / or modified. Each of the blocks can be implemented in a variety of different ways. Any suitable combination of the elements and steps of the embodiments may be combined to provide further embodiments. The appended claims and their equivalents are intended to obviate the scope and spirit of the present disclosure. It is intended to cover such forms or modifications as fall within the scope of the appended claims.

Claims

1. 1. A bulk acoustic wave device comprising: A first electrode; A second electrode; a piezoelectric layer positioned between the first electrode and the second electrode; a multi-layer raised frame outside a middle area of ​​the active region of said bulk acoustic wave device; Structures and Including, the multi-layer raised frame structure includes a first raised frame layer and a second raised frame layer; the first raised frame layer is positioned between the first electrode and the second electrode; the first raised frame layer has a lower acoustic impedance than the first electrode; The second raised frame layer overlaps the first raised frame layer in the active area. Bulk acoustic wave devices.

2. The first raised frame layer modulates the frequency of a raised frame mode of the bulk acoustic wave device.

2. The bulk acoustic wave of claim 1, configured to move a frequency band of the bulk acoustic wave away from a dominant resonant frequency of the device.

3. The multi-layer raised framework supports the bulk acoustic wave device from the active region.

2. The bulk dielectric of claim 1 , configured to block lateral energy leakage into the aggressive region. Acoustic wave devices.

4. The acoustic impedance of the first raised frame layer is greater than the acoustic impedance of the piezoelectric layer. The bulk acoustic wave device of claim 1 ,

5. The bulk acoustic wave device of claim 1 , wherein the first raised frame layer is a silicon dioxide layer.

6. The first electrode is made of at least one of molybdenum, tungsten, ruthenium, platinum, and iridium. The bulk acoustic wave device of claim 1 , further comprising one or more of:

7. 4. The method of claim 3, wherein the first raised frame layer is positioned between the piezoelectric layer and the first electrode.

1. Bulk acoustic wave device.

8. The first raised frame layer is disposed in a raised frame domain of the bulk acoustic wave device.

10. The bulk acoustic wave device of claim 1 , wherein the first and second electrodes are disposed along edges of the active domain. 。

9. The bulk acoustic wave device further comprises a first insulating layer between the raised frame domain and the intermediate area. The bulk acoustic wave device of claim 8 comprising a recessed frame domain.

10. the second raised frame layer and the piezoelectric layer are disposed on opposite sides of the second electrode; 4. The method of claim 3, wherein the first raised frame layer is positioned between the piezoelectric layer and the second electrode.

1. Bulk acoustic wave device.

11. 2. The bulk acoustic wave of claim 1, wherein the second raised frame layer has a higher density than the piezoelectric layer. device.

12. 2. The bulk acoustic wave device of claim 1, wherein the second raised frame layer comprises the same material as the second electrode. Vice.

13. Further comprising an air cavity; 2. The piezoelectric device of claim 1, wherein the air cavity and the piezoelectric layer are on opposite sides of the first electrode. Acoustic wave devices.

14. further comprising an acoustic Bragg reflector; 2. The piezoelectric layer of claim 1, wherein the acoustic Bragg reflector and the piezoelectric layer are on opposite sides of the first electrode. Bulk acoustic wave devices.

15. 1. A multiplexer, comprising: a first filter having a first passband; a second filter having a second passband; and Including, the first filter includes a bulk acoustic wave device; The bulk acoustic wave device includes a middle area of ​​an active area of ​​the bulk acoustic wave device. a multi-layer raised frame structure on the outside of the the multi-layer raised frame structure includes a first raised frame layer and a second raised frame layer; the first raised frame layer is positioned between the electrode and the piezoelectric layer; the first raised frame layer has a lower acoustic impedance than the electrodes; The second raised frame layer overlaps the first raised frame layer in the active area. the law of nature, the second filter is coupled to the first filter at a common node; The multi-layer raised frame structure is configured to align the raised frame modes of the bulk acoustic wave device in the The multiplexer is configured to move the first passband away from the second passband.

16. The common node includes at least a first carrier associated with the first passband and and a second carrier associated with the second passband.

16. The multiplexer of claim 15 configured to:

17. The multi-layer raised frame mode has a reflection coefficient of the first filter in the second passband of 16. The multiplexer of claim 15 configured to increase

18. the first acoustic filter further includes a second bulk acoustic wave device; The second bulk acoustic wave device includes a first bulk acoustic wave device having an active region of the second bulk acoustic wave device.

16. The multiplexer of claim 15, further comprising a second multi-layer raised frame structure outside the interspace area. 。

19. The acoustic impedance of the first raised frame layer is greater than the acoustic impedance of the piezoelectric layer.

16. The multiplexer of claim 15, wherein the

20. A packaged module, A package substrate; a flexible substrate configured to filter radio frequency signals on the packaging substrate; Wave filters, A radio frequency (RF) filter is electrically coupled to the acoustic wave filter and positioned on the package substrate. Wavenumber components and Including, the acoustic wave filter includes a bulk acoustic wave device; The bulk acoustic wave device includes a middle area of ​​an active area of ​​the bulk acoustic wave device. a multi-layer raised frame structure on the outside of the the multi-layer raised frame structure includes a first raised frame layer and a second raised frame layer; the first raised frame layer is positioned between the electrode and the piezoelectric layer; the first raised frame layer has a lower acoustic impedance than the electrodes; The second raised frame layer overlaps the first raised frame layer in the active area. the law of nature, The acoustic wave filter and the radio frequency component are encapsulated in a common package. , packaged module.

21. The radio frequency component may be at least one of a radio frequency amplifier and a radio frequency switch.

21. The packaged module of claim 20, further comprising:

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