Measurement device, measurement method, lithography device, and article producing method

Abstract

To provide a measurement device advantageous in realizing high measurement accuracy in a mark measurement utilizing a binning function.SOLUTION: A measurement device includes an imaging unit that captures an image of the mark using an imaging element, and a control unit that determines the position of the mark based on the results of a first measurement using the imaging unit and a second measurement using the imaging unit conducted after the first measurement. The control unit determines a first binning condition, which is a condition for binning processing in the first measurement, and a second binning condition, which is a condition for binning processing in the second measurement, based on the design information of the mark, sets the first binning condition to perform the first measurement, and sets the second binning condition to perform the second measurement.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a measuring device, a measuring method, a lithography device, and an article manufacturing method.

Background Art

[0002] In a lithography device such as an exposure device used in a lithography process, it is important to perform alignment between a shot region of a substrate and a reticle, and overlay between different layers on the substrate at high speed and with high accuracy. In order to shorten the measurement time in alignment, a technique has been proposed in which binning processing is set for an imaging device to measure the position of a mark (see Patent Document 1). Patent Document 1 discloses a technique in which binning processing for detecting a signal by treating several adjacent pixels among a plurality of pixels of an imaging device as one pixel is set, and sequential imaging is performed at a predetermined interval within a measurement region wider than a measurement field of view.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, the use of the binning function may cause a decrease in the measurement accuracy of a mark formed on a substrate due to a decrease in pixel resolution.

[0005] The present invention provides, for example, a measuring device advantageous for realizing high measurement accuracy in measuring a mark using a binning function.

Means for Solving the Problems

[0006] According to one aspect of the present invention, there is provided an imaging unit that images the mark using an imaging device, a first measurement using the imaging unit, and a control unit that determines the position of the mark based on the results of a second measurement using the imaging unit performed after the first measurement. The control unit determines a first binning condition, which is a condition regarding binning processing in the first measurement, and a second binning condition, which is a condition regarding binning processing in the second measurement, based on the design information of the mark, sets the first binning condition and performs the first measurement, and sets the second binning condition and performs the second measurement. There is provided a measuring device characterized by the above.

Effect of the Invention

[0007] According to the present invention, for example, in the measurement of a mark using a binning function, it is possible to provide a measuring device advantageous for realizing high measurement accuracy.

Brief Description of the Drawings

[0008]

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Embodiments for Carrying Out the Invention

[0009] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the invention according to the claims. Although a plurality of features are described in the embodiments, not all of these plurality of features are essential for the invention, and the plurality of features may be arbitrarily combined. Further, in the accompanying drawings, the same or similar configurations are denoted by the same reference numerals, and redundant descriptions are omitted.

[0010] <First Embodiment> FIG. 1(a) is a diagram showing the configuration of a measuring apparatus 100 according to an embodiment. The measuring apparatus 100 is configured to measure the position of a mark provided on a substrate 73. The measuring apparatus 100 includes a substrate stage WS that holds the substrate 73, an imaging unit 50, a control unit CU, and a user interface UI. Here, the substrate 73 is, for example, a substrate used for manufacturing devices such as semiconductor elements and liquid crystal display elements, and specifically, a wafer, a glass substrate, or other substrates to be processed.

[0011] The substrate stage WS holds the substrate 73 via a substrate chuck (not shown) and is connected to a stage drive mechanism (not shown). The stage drive mechanism includes a linear motor or the like and is a positioning mechanism that positions the substrate 73 held by the substrate stage WS by driving the substrate stage WS in the X-axis direction, Y-axis direction, Z-axis direction, and rotational directions with each axis as a rotation axis. The position of the substrate stage WS is monitored by, for example, a six-axis laser interferometer IF, and the substrate stage WS is driven to a predetermined position under the control of the control unit CU.

[0012] The control unit CU is composed of a computer (information processing device) including, for example, a CPU and a memory, and comprehensively controls each part of the measuring device 100 according to a program stored in a storage unit or the like. The control unit CU also functions as a processing unit that performs various correction processes (computation processes) on the measurement results obtained by the imaging unit 50, specifically, the imaging results of the mark 72 (measurement mark) formed on the substrate 73, and obtains the position of the mark 72.

[0013] The user interface UI may include a display device, an input device, and the like. The user can specify a shot region to be measured or a mark within the shot region for a plurality of shot regions of the substrate 73 via the user interface UI.

[0014] The configuration of the imaging unit 50 will be described with reference to FIG. 1(b). The imaging unit 50 includes an illumination optical system that illuminates the substrate 73 using light from a light source 61, and an imaging optical system that forms an image of the mark 72 formed on the substrate 73 on an image sensor 75. The light from the light source 61 is guided to an illumination aperture stop 64 via lenses 62 and 63. The light that has passed through the illumination aperture stop 64 is guided to a polarization beam splitter 68 via a lens 65, a mirror 66, and a lens 67. The P-polarized light that has passed through the beam splitting surface of the polarization beam splitter 68 is converted into circularly polarized light by a λ / 4 plate 70 after passing through an aperture stop 69, and illuminates the mark 72 formed on the substrate 73 in Koehler illumination via an objective lens 71 arranged such that the optical axis is along the Z direction.

[0015] The light illuminated by Keller and reflected, diffracted, and scattered by the mark 72 passes through the objective lens 71 and the λ / 4 plate 70 and is guided to the aperture stop 69. Here, the polarization state of the light from the mark 72 becomes circularly polarized light in the opposite direction to the circularly polarized light illuminating the mark 72, and by passing through the λ / 4 plate 70, it is converted from circularly polarized light to S-polarized light. After passing through the aperture stop 69, this S-polarized light is reflected by the beam splitting surface of the polarization beam splitter 68 and guided to the imaging device 75 via the lens 74. The imaging device 75 has a signal readout unit 75a that reads out the received light as an electrical signal. The signal readout unit 75a is configured to be able to perform a process (binning process) of reading out a plurality of adjacent pixels together during readout. By performing the binning process, it is possible to achieve both a reduction in the accumulation time due to an increase in the charge capacity and a reduction in the charge readout time.

[0016] Note that the illumination optical system may have a light quantity adjustment unit (not shown) and a wavelength adjustment unit (not shown). The light quantity adjustment unit adjusts the light quantity for illuminating the substrate. For example, a plurality of ND filters with different transmittances for the light from the light source 61 are arranged in a state where they can be switched, and by controlling the switching of the ND filters by the light quantity adjustment unit, the intensity of the light illuminating the substrate 73 can be adjusted. Also, a plurality of wavelength filters with different wavelength characteristics of the transmitted light for the light from the light source 61 are arranged in a state where they can be switched, and by controlling the switching of the wavelength filters by the wavelength adjustment unit, the wavelength of the light illuminating the substrate 73 can be adjusted. Furthermore, the wavelength adjustment unit may include a wavelength variable element and a drive mechanism for driving the wavelength variable element. The drive mechanism includes a linear motor or the like, and by driving the wavelength variable element along a predetermined direction, the wavelength of the light illuminating the mark 72 can be adjusted.

[0017] On one hand, the control unit CU in Fig. 1(a) acquires the position of the mark 72 based on the position information of the substrate stage WS obtained by the laser interferometer IF and the signal waveform obtained by detecting the image of the mark 72. The intensity of the signal waveform can be adjusted by at least one of the control of the light quantity adjustment unit (ND filter) provided in the illumination optical system of the imaging unit 50, the output control of the light source 61, and the control of the accumulation time of the imaging element 75.

[0018] In addition, in the imaging optical system of the imaging unit 50, a detection aperture stop may be configured by arranging a plurality of lenses between the polarization beam splitter 68 and the imaging element 75. Also, a plurality of aperture stops with different aperture numbers can be set for each of the illumination aperture stop 64 and the detection aperture stop with respect to the illumination optical system and the imaging optical system, respectively, and these plurality of aperture stops may be made switchable. Thereby, it becomes possible to adjust the σ value, which is a coefficient representing the ratio of the aperture number of the illumination system to the aperture number of the imaging system. Further, as a method of detecting the light from the mark 72, for example, it may be a dark field detection that controls the aperture diameters of the illumination aperture stop 64 and the detection stop to block the zero-order diffracted light from the mark 72 and detect only the higher-order diffracted light and scattered light.

[0019] Hereinafter, a method for measuring the position of the substrate 73 at high speed and with high precision by detecting the light from the mark formed on the substrate 73 using the measuring device 100 described in Figs. 1(a) and 1(b) will be described.

[0020] In the present embodiment, the control unit CU performs a process of obtaining the position of the mark 72 based on the results of the first measurement using the imaging unit 50 and the second measurement using the imaging unit 50 performed after the first measurement.

[0021] Fig. 2 is a flowchart showing the measurement method in the first embodiment. The measurement method (measurement process) is implemented by the control unit CU comprehensively controlling each part of the measuring device 100.

[0022] In S301, the control unit CU determines a condition regarding the binning process in the first measurement (first binning condition) and a condition regarding the binning process in the second measurement (second binning condition) based on the design information of the mark 72. In the present embodiment, the first measurement is a rough measurement for obtaining the relative positional deviation of the substrate 73 with respect to the imaging unit 50, and the second measurement is a precise measurement for obtaining the position of the mark with high precision. The binning process and the method for determining the conditions regarding the binning process will be described in detail later.

[0023] In S302, the control unit CU controls the substrate stage WS to convey the substrate 73 into the measurement field of view of the imaging unit 50.

[0024] In S303, the control unit CU sets the first binning condition determined in S301 for the imaging element 75.

[0025] In S304, for the purpose of roughly measuring the relative positional deviation of the substrate 73 with respect to the imaging unit 50, the control unit CU controls the imaging unit 50 to image the mark 72 formed on the substrate 73.

[0026] In S305, the control unit CU performs image processing (signal processing, arithmetic processing) on the image of the mark 72 obtained by the imaging in S304. As a result, the relative position between the substrate 73 and the imaging unit 50 is calculated, and a position correction amount for aligning the relative position is calculated.

[0027] In S306, the control unit CU performs relative alignment of the substrate 73 with respect to the imaging unit 50. The alignment of the substrate 73 is performed, for example, so that the X direction in which the substrate stage WS can be driven coincides with the X-directional arrangement direction of a plurality of shot regions exposed on the substrate 73. Further, the alignment of the substrate 73 may be performed so that an image of the mark 72 is disposed in the measurement region of the imaging unit 50 in the second measurement. Further, the alignment of the substrate 73 is not limited to the X direction and the Y direction, and may be alignment in the Z direction. For example, rough measurement for obtaining the relative positional deviation in the Z direction in the first measurement is performed, and based on the result of the first measurement, the alignment of the substrate 73 in the Z direction is performed so that an image of the mark 72 is disposed at the focal position of the imaging unit 50 in the second measurement.

[0028] In S307, the control unit CU sets the second binning condition determined in S301 for the imaging device 75.

[0029] In S308, for the purpose of accurately obtaining the position of the mark, the control unit CU controls the imaging unit 50 to image the mark 72 on the substrate 73.

[0030] In S309, the control unit CU performs image processing (signal processing, arithmetic processing) on the image of the mark 72 obtained by the imaging in S308. Thereby, the position information of the substrate 73 with respect to the imaging unit 50 is acquired. The position information of the substrate 73 may be acquired by measuring the positions of a plurality of marks 72 formed at different positions on the substrate 73 respectively.

[0031] In calculating the positions of the marks 72 at S305 and S309 in FIG. 2, the positions of the marks 72 can be calculated by processing the images of the marks 72 acquired at S304 and S308 using, for example, the template matching method. In the template matching method, the position with the highest correlation can be detected as the center position of the measurement pattern by performing a correlation operation between the signals acquired at S304 and S308 and a model signal (template) acquired in advance. Generally, the model signal (template) is expressed in terms of the relationship between the number of pixels and the signal intensity. By obtaining the centroid pixel position of a region of several pixels to the left and right from the position that becomes the peak in the correlation value function, a resolution of 1 / 10 pixel to 1 / 50 pixel can be achieved.

[0032] Referring to FIG. 3, the binning process in the image sensor 75 will be described. FIGS. 3(a) and 3(b) are block diagrams showing a configuration example of the signal readout unit 75a in the image sensor 75. Here, for simplicity of explanation, a 4×4 matrix is used. The image sensor 75 is an image sensor that transfers and reads the charges accumulated in the pixels 90 to acquire image information. The in-line transfer type and the frame transfer type are known as charge transfer methods. Here, the signal readout unit 75a of the frame transfer type will be described as an example. The signal readout unit 75a of the frame transfer type may include a vertical shift register 91, a horizontal shift register 92, and a readout amplifier 93. The charges accumulated in the pixels 90 are transferred vertically by the vertical shift register 91 and then sequentially transferred horizontally by the horizontal shift register 92, and the signals are read out by the readout amplifier 93. First, the charges accumulated under the gate electrodes of the respective pixels of the image sensor are transferred to the vertical shift register 91 at high speed. In the vertical shift register 91, the charges are transferred sequentially in the vertical direction. Let the pixels of the vertical shift register 91 be the first row, the second row, the third row, and the fourth row from the bottom. At the time of transfer, the charges of the pixels in the fourth row are transferred to the pixels in the third row, the charges of the pixels in the third row are transferred to the pixels in the second row, the charges of the pixels in the second row are transferred to the pixels in the first row, and the charges of the pixels in the first row are transferred to the horizontal shift register 92 simultaneously.

[0033] As shown in Fig. 3(a), in normal charge readout, each time the charge of a pixel is transferred to the horizontal shift register 92, the readout amplifier 93 operates to read out the data in the horizontal shift register 92 one by one. When all the data are read out, the charge transfer of each pixel is performed again. That is, the charge of the pixels in the third row is simultaneously transferred to the pixels in the second row, the charge of the pixels in the second row is simultaneously transferred to the pixels in the first row, and the charge of the pixels in the first row is transferred to the horizontal shift register 92. Then, similarly, the data in the horizontal shift register 92 are read out by the readout amplifier 93, and the charge transfer is repeated. In this way, when all the charges initially accumulated in each pixel are transferred and read out, the readout of one frame is completed.

[0034] As shown in Fig. 3(b), by performing the readout of the data in the horizontal shift register 92 not every time of charge transfer but after several transfers, binning processing in the vertical transfer direction can be performed. For example, the charge of the pixels in the fourth row is simultaneously transferred to the pixels in the third row, the charge of the pixels in the third row is simultaneously transferred to the pixels in the second row, the charge of the pixels in the second row is simultaneously transferred to the pixels in the first row, and the charge of the pixels in the first row is transferred to the horizontal shift register 92. Then, without reading out the data in the horizontal shift register 92, the next vertical transfer is started. That is, the charge of the pixels in the third row is simultaneously transferred to the pixels in the second row, the charge of the pixels in the second row is simultaneously transferred to the pixels in the first row, and the charge of the pixels in the first row is transferred to the horizontal shift register 92. Then, when the data in the horizontal shift register 92 are read out, the charge of the pixels in the first row and the charge of the pixels in the second row are added and read out. When the optoelectronic signal is read out in this way, it is equivalent to using the pixel group of the image sensor corresponding to the pixels in the first row and the pixel group of the image sensor corresponding to the pixels in the second row as one line image sensor.

[0035] In this way, the binning process can be realized by a process of adding and reading the charges of a plurality of pixels. By the binning process, it becomes possible to set a plurality of light-receiving portions where signal reading is independently performed for one area image sensor. So far, the method of performing the binning process in the vertical transfer direction has been described, but the application range of the present invention is not limited thereto. For example, by controlling the reading amplifier 93 that reads the data in the horizontal shift register 92, the binning process can also be performed in the horizontal transfer direction. Further, the signal reading unit 75a in the imaging device 75 may be configured to include a plurality of vertical shift registers, a plurality of horizontal shift registers, and a plurality of reading amplifiers. In the example of FIG. 3(c), for the pixel group 90A, a vertical shift register 91A, a horizontal shift register 92A, and a reading amplifier 93A are configured, and for the pixel group 90B, a vertical shift register 91B, a horizontal shift register 92B, and a reading amplifier 93B are configured. For example, by setting different binning processes in the plurality of vertical shift registers and horizontal shift registers, different binning processes may be executed within the detection surface of the imaging device.

[0036] Generally, as methods for shortening the measurement time in an imaging device, a method of thinning out and reading the pixels within the detection surface and a method of reading only the region of interest within the detection surface are known. However, in those methods, although it is possible to shorten the charge reading time, it is not possible to shorten the accumulation time. In the binning process, there is an advantage that the measurement time can be shortened by achieving both the shortening of the accumulation time due to the increase in the charge capacity and the shortening of the charge reading time.

[0037] Note that so far, the configuration for performing the binning process in the imaging device has been described, but the application range of the present invention is not limited thereto. For example, it is also possible for the control unit CU to perform the binning process on the output data from the imaging device. Thereby, the electrical noise generated in each pixel of the imaging device can be averaged, and the ratio of the noise to the signal intensity can be reduced.

[0038] With reference to FIG. 4, a method for determining binning conditions will be described. FIG. 4(a) is a diagram showing a mark image 72A formed on the detection surface of the imaging device 75. The imaging device 75 can be, for example, a two-dimensional imaging device having a plurality of pixels in the X direction and the Y direction. Here, the Y direction (first direction) corresponds to the vertical transfer direction of the imaging device 75, and the X direction (second direction) corresponds to the horizontal transfer direction of the imaging device 75. The mark image 72A includes a plurality of line elements extending in the Y direction corresponding to the vertical transfer direction of the imaging device 75. The plurality of line elements are arranged at a predetermined pitch in the X direction corresponding to the horizontal transfer direction of the imaging device 75. In the example of FIG. 4(a), the plurality of line elements (mark patterns) can include four line elements A11, A12, A13, and A14. The line width (length in the Y direction) of the line element is represented by L1, the pitch is P1, and the length in the Y direction corresponding to the vertical transfer direction of the imaging device 75 is represented by L2. The design information of the mark can include information on the line width L1 of the line element, the pitch P1 between the line elements, and the length L2 of the line element in the Y direction.

[0039] In the position measurement of the mark in the present embodiment, after obtaining the position correction amount of the substrate conveyed to the measurement position by rough measurement and aligning the substrate, precise measurement is performed. Thereby, the position of the mark is accurately measured and the position information of the substrate is acquired. For this reason, for example, a wide measurement field of view is required for rough measurement, and high resolution is required for precise measurement. Here, if measurement that satisfies both a wide measurement field of view and high resolution is performed, since the number of pixels for reading charges in the imaging device 75 is large, there is a problem that it takes time for reading. Further, in order to detect the signal intensity from the mark with high resolution, increasing the accumulation time of the imaging device for the purpose of obtaining a predetermined detection light amount in each pixel causes a problem of an increase in measurement time.

[0040] Therefore, in the present embodiment, the control unit CU determines a first binning condition set in the first measurement (in this embodiment, a rough measurement for obtaining the relative positional deviation of the substrate 73 with respect to the imaging unit 50) and a second binning condition set in the second measurement (in this embodiment, a precise measurement for obtaining the position of the mark 72) based on the design information of the mark 72 (S301).

[0041] Figures 4(b) and 4(c) show examples of the resolutions 75W1 and 75W2 of the image sensor 75 when the first binning condition and the second binning condition are set in the rough measurement and the precise measurement of the present embodiment, respectively. As described above, in the binning process, charges accumulated in a plurality of adjacent pixels in the image sensor 75 are added and processed. In the present embodiment, the first binning condition and the second binning condition may each include a binning coefficient indicating the number of adjacent pixels to be binned. For example, when the binning coefficient is 4, it indicates that the number of adjacent pixels to be binned is 4. For example, when the binning coefficient is 9, it indicates that the number of adjacent pixels to be binned is 9.

[0042] Also, the binning coefficient may include a first binning coefficient related to binning in the first direction and a second binning coefficient related to binning in the second direction. Specifically, the first binning coefficient indicates the number of adjacent pixels binned in the Y direction (first direction) corresponding to the vertical transfer direction of the image sensor 75. The second binning coefficient indicates the number of adjacent pixels binned in the X direction (second direction) corresponding to the horizontal transfer direction of the image sensor 75. In the first measurement and the second measurement, the first binning coefficient and the second binning coefficient can be set independently. In the rough measurement as the first measurement shown in FIG. 4(b), a binning process of 2 pixels × 2 pixels is set. In this case, the first binning coefficient is set to 2 and the second binning coefficient is also set to 2. On the other hand, in the precise measurement as the second measurement shown in FIG. 4(c), a binning process of 1 pixel × 1 pixel is set. Here, the "binning process of 1 pixel × 1 pixel" means that the binning process is not set (binning is disabled). In this case, the first binning coefficient is set to 1 and the second binning coefficient is also set to 1. Thus, not performing the binning process is also included in the "binning conditions".

[0043] As described above, according to this embodiment, the control unit CU determines the first binning condition and the second binning condition such that the binning coefficient specified by the first binning condition is larger than the binning coefficient specified by the second binning condition. According to such processing, in the rough measurement shown in FIG. 4(b), measurement is performed with a lower resolution while maintaining an equivalent measurement field of view compared to the precise measurement shown in FIG. 4(c). Therefore, in the rough measurement, it is possible to shorten the measurement time by shortening the readout time due to the reduction in the number of pixels for reading out charges and shortening the accumulation time by adding charges.

[0044] The binning coefficient can be determined, for example, so that the resolution of the image sensor 75 becomes smaller with respect to the line width L1 of the line elements constituting the mark image 72A, the pitch P1 between the line elements, and the length L2 in the Y direction in which the line elements extend on the detection surface of the image sensor 75. Assuming that the pixel size of the image sensor 75 is Ps and the binning coefficient is N, the binning coefficient N can be determined, for example, so as to satisfy the following equations (1) to (3).

[0045] N ≤ L1 / Ps ··· Equation (1) N ≤ P1 / Ps ··· Equation (2) N ≤ L2 / Ps ··· Equation (3)

[0046] As described above, since the first binning coefficient and the second binning coefficient can be set independently, the first binning coefficient and the second binning coefficient may be set to different values instead of the same value. Let Ny be the first binning coefficient indicating the number of adjacent pixels binned in the Y direction, and Nx be the second binning coefficient indicating the number of adjacent pixels binned in the X direction. In this case, for a mark as shown in FIG. 4(a), the first binning coefficient Ny and the second binning number Nx can be determined so as to satisfy the following equations (4) to (6).

[0047] Nx ≤ L1 / Ps ··· Equation (4) Nx ≤ P1 / Ps ··· Equation (5) Ny ≤ L2 / Ps ··· Equation (6)

[0048] Also, let Pi be the maximum signal intensity detectable by the imaging device 75, and Si be the signal intensity with which the mark 72 can be measured with a desired accuracy (required accuracy). In this case, in addition to the above equations (1) to (3) or equations (4) to (6), it is preferable that the binning number N is determined so as to satisfy the following equation (7). N ≤ Pi / Si ··· Equation (7)

[0049] Thereby, it is possible to avoid the signal intensity added by the binning process from exceeding the maximum signal intensity in the imaging device 75.

[0050] FIG. 4(d) is a diagram showing a specific example in the case of obtaining the relative positional deviation between the focal position of the imaging unit 50 with respect to the Z direction and the substrate 73 in the first measurement. The horizontal axis represents the Z position, and the vertical axis represents the signal contrast calculated based on the signal intensity. For example, the signal contrast SC is represented by the following equation (8) when the maximum value of the signal intensity of the mark image 72A detected by the imaging unit 50 is Smax and the minimum value of the signal intensity is Smin. SC = (Smax - Smin) / (Smax + Smin) ··· Equation (8)

[0051] Accordingly, for example, at a plurality of different positions in the Z direction, the signal contrast SC may be detected, and the Z position at which the signal contrast is maximized may be obtained as the best focus position of the imaging unit 50. Thus, the present embodiment is not limited to alignment in the X and Y directions. For example, the relative positional deviation in the Z direction may be obtained in the first measurement, and based on the result of the first measurement, the substrate 73 may be aligned in the Z direction so that the mark image 72A is disposed at the focus position of the imaging unit 50 in the second measurement.

[0052] Subsequently, a method for setting the measurement parameters in the first measurement and the second measurement will be described. As described above, when different binning conditions are set in the first measurement and the second measurement, there are differences in the signal intensity and the number of pixels in the output data from the image sensor 75. Therefore, if the same measurement parameters are set, there is a concern that the measurement accuracy will decrease.

[0053] FIG. 5 is a diagram showing an example of the signal intensity detected by the image sensor 75 and its target range when different binning conditions are set in the first measurement and the second measurement. FIGS. 5(a) and 5(b) are diagrams showing cases where the measurement parameters set in the first measurement and the second measurement are the same and different, respectively. Assuming that the binning coefficient for the first measurement is N and the binning coefficient for the second measurement is 1, based on the principle of the binning process, the signal intensity is higher in binning ON (N pixels) than in binning OFF (1 pixel). Therefore, as shown in FIG. 5(a), when the same measurement parameters are set, it is difficult for the signal intensity to fall within the target range under both the first binning condition and the second binning condition. If the measurement is performed with a signal intensity below the target, the ratio of noise to the signal intensity increases, resulting in a decrease in measurement accuracy. Also, when adjusting the measurement parameters so that the detected signal intensity falls within the target range, the measurement time increases, leading to a decrease in productivity.

[0054] Therefore, the control unit CU sets the measurement parameters in the first measurement (the first binning condition is set for the first measurement) or the second measurement (the second binning condition is set for the second measurement) so that both the signal intensity detected by the imaging device in the first measurement and the signal intensity detected by the imaging device in the second measurement fall within the target range. FIG. 5(b) is a diagram showing the signal intensities respectively detected when the accumulation time of the imaging device 75 is set differently as an example of the measurement parameters. For example, the control unit CU sets a longer accumulation time for the second measurement than the first measurement based on the number of pixels added by the binning process. Thereby, in the first measurement and the second measurement where different binning conditions are set, the signal intensities respectively detected can be kept within the target range.

[0055] Note that the measurement parameters are not limited to the accumulation time of the imaging device 75. The measurement parameters may be, for example, at least any one of the gain of the imaging device 75, the light amount adjustment amount (light transmittance) by the light amount adjustment unit, the output of the light source 61, the optical magnification of the imaging unit 50, etc. For example, the control unit CU may set at least any one of the set value of the gain of the imaging device 75, the ND filter of the light amount adjustment unit, and the current value of the light source 61 so that the signal intensity falls within the target range based on the ratio of the number of pixels added by the binning process. Also, the optical magnification of the imaging unit 50 may be switched between rough measurement and precise measurement to adjust so that the signal intensity falls within the target range.

[0056] Also, as shown in FIGS. 4(b) and (c), when different binning conditions are set in the first measurement and the second measurement, there is a difference in the number of pixels of the output data from the imaging device 75, so the relationship of the signal intensity for each pixel is different between the first measurement and the second measurement. For example, the number of pixels from the origin 70 of the imaging device 75 to the mark image 72A decreases by half in the binning process (2 pixels × 2 pixels) compared to the binning process (1 pixel × 1 pixel). Therefore, when calculating the position of the mark 72 using the same model signal (template) in the first measurement and the second measurement, the difference in the number of pixels between the acquired signal and the template causes a decrease in measurement accuracy.

[0057] Therefore, in this embodiment, the control unit CU sets different templates for the first measurement and the second measurement based on the number of pixels of the output data according to the binning conditions. For example, based on the different binning conditions set for the rough measurement and the precise measurement in S301, templates suitable for the number of pixels of the respective output data are set, and the rough measurement in S304 and the precise measurement in S308 are performed. Thereby, it is possible to avoid a decrease in the measurement accuracy of the mark due to the difference in the number of pixels between the acquired signal and the template.

[0058] The setting of the measurement parameters is not limited to the template, and at least any one of the readout area, gradation, and processing algorithm in the image sensor 75 may be set differently for the first measurement and the second measurement according to at least any one of the required measurement time, measurement area, and measurement accuracy. For example, in the rough measurement compared to the precise measurement, the gradation at the time of detection in the image sensor 75 may be reduced to reduce the data capacity and shorten the transfer time. Also, the calculation time may be shortened by simplifying the arithmetic processing for calculating the mark position. Further, the control unit CU may set different processing algorithms for processing the image and the signal waveform when calculating the mark position for the rough measurement and the precise measurement. In addition to this, for the purpose of suppressing an increase in the transfer time and the calculation time, the readout area of the image sensor 75 in the precise measurement may be made smaller than that in the rough measurement.

[0059] Note that, so far, the case where the positions of the same mark are measured in the rough measurement and the precise measurement has been described as an example, but the application range of the present invention is not limited to this. For example, the marks used in the rough measurement and the precise measurement may be marks having different positions on the substrate, mark designs, or formed layers. In this case, if the mark used in the first measurement and the mark used in the second measurement are defined as the first mark and the second mark, respectively, the control unit CU acquires in advance the relative position information of the first mark and the second mark. Then, based on the result of the first measurement executed in S304 of FIG. 2 and the relative position information of the first mark and the second mark, a position correction amount is calculated in S305, and in S306, the second mark is aligned with the measurement area of the image sensor 75.

[0060] As described above, in the first embodiment, the control unit CU determines the first binning condition and the second binning condition based on the design information of the marks formed on the substrate. The control unit CU performs a first measurement for setting the first binning condition and obtaining the position of the mark, obtains the position correction amount of the substrate based on the result of the first measurement, and aligns the position of the substrate. Thereafter, the control unit CU performs a second measurement for setting the second binning condition and obtaining the position of the mark, and acquires the position information of the substrate. Thereby, the measurement target can be measured at high speed and with high accuracy.

[0061] <Second Embodiment> Referring to FIG. 6, the measurement process of the second embodiment will be described. In the first embodiment, rough measurement is performed in the first measurement to obtain the position correction amount, and then precise measurement is performed in the second measurement. In contrast, in the second embodiment, precise measurement is performed in both the first measurement and the second measurement in which different binning conditions are set, and the position information of the substrate is acquired. Since the difference between this embodiment and the first embodiment lies in the measurement process sequence, the measurement process sequence will be described in detail here, and the description of other contents will be omitted because they are the same as those in the first embodiment.

[0062] FIG. 6 is a flowchart showing the measurement method in the second embodiment. The measurement method (measurement process) is performed by the control unit CU comprehensively controlling each part of the measuring device 100.

[0063] In S501, the control unit CU determines the condition (first binning condition) regarding the binning process in the first measurement for measuring the position of the mark 72 and the condition (second binning condition) regarding the binning process in the second measurement based on the design information of the mark 72. In this embodiment, after rough measurement for obtaining the relative positional deviation of the substrate 73 with respect to the imaging unit 50 is performed, precise measurement for obtaining the position of the mark with high accuracy is performed by the first measurement and the second measurement.

[0064] In S502, the control unit CU controls the substrate stage WS to convey the substrate 73 into the measurement field of view of the imaging unit 50. Since S503, S504, and S505 are the same as S304, S305, and S306 in FIG. 2, the description thereof is omitted. In S505, it is preferable that the control unit CU drives the substrate stage WS so as to align the first mark on the substrate 73 with the imaging unit 50.

[0065] In S506, the control unit CU sets the first binning condition determined in S501 for the imaging device 75.

[0066] In S507, the control unit CU controls the imaging unit 50 to image the first mark on the substrate 73. Thereafter, the control unit CU performs image processing (signal processing, arithmetic processing) on the image of the first mark obtained by imaging, and obtains the position of the first mark.

[0067] In S508, for the purpose of obtaining the position of the second mark arranged at a position different from the first mark, alignment is performed so that the second mark is located within the measurement field of view of the imaging unit 50.

[0068] In S509, the control unit CU sets the second binning condition determined in S501 for the imaging device 75. In the present embodiment, the start of S509 is not limited to after the execution of S508. For example, S508 and S509 may be executed simultaneously.

[0069] In S510, the control unit CU controls the imaging unit 50 to image the second mark on the substrate 73. Thereafter, the control unit CU performs image processing (signal processing, arithmetic processing) on the image of the second mark obtained by imaging, and obtains the position of the second mark.

[0070] In S511, the control unit CU acquires the position information of the substrate 73 with respect to the imaging unit 50 based on the position of the first mark obtained in S507 and the position of the second mark obtained in S510.

[0071] Referring to FIG. 7, a method for precisely measuring the position of the substrate 73 using the first mark and the second mark will be described. FIG. 7(a) is a diagram showing an image of the first mark 72B formed on the detection surface of the imaging device 75. The first mark 72B is configured as a mark pattern including a plurality of line elements B11, B12, B13, B14 extending in the Y direction (first direction) corresponding to the vertical transfer direction of the imaging device 75. The plurality of line elements B11, B12, B13, B14 are arranged at an equal pitch P1, and each line element has a line width L1 and a length L2 in the Y direction. The first mark 72B is used, for example, for the purpose of accurately measuring the position of the substrate in the X direction. FIG. 7(b) is a diagram showing an image of the second mark 72C formed on the detection surface of the imaging device 75. The second mark 72C is configured as a mark pattern including a plurality of line elements C11, C12, C13, C14 extending in the X direction (second direction intersecting the first direction) corresponding to the horizontal transfer direction of the imaging device 75. The plurality of line elements C11, C12, C13, C14 are arranged at an equal pitch P1, and each line element has a line width L1 and a length L2 in the Y direction. The second mark 72C is used, for example, for the purpose of accurately measuring the position of the substrate in the Y direction.

[0072] In the present embodiment, the first measurement is the measurement of the first mark 72B using the imaging unit 50, and the second measurement is the measurement of the second mark 72C using the imaging unit 50. The binning conditions for the first measurement and the second measurement are determined by the control unit CU based on the design information of the first mark 72B and the second mark 72C on the substrate, respectively, in the same manner as in the first embodiment. Since the method for setting the binning conditions is the same as that described in the first embodiment, the description thereof is omitted here.

[0073] In addition, in the present embodiment, the first binning condition includes a first binning coefficient indicating the number of adjacent pixels binned in the Y direction and a second binning coefficient indicating the number of adjacent pixels binned in the X direction. In the measurement of the first mark 72B (first measurement), by performing binning processing on the first mark 72B in the Y direction, it is possible to achieve both a reduction in measurement time associated with the binning processing and a high resolution in the measurement direction (X direction). Further, in the measurement of the second mark 72C (second measurement), by performing binning processing on the second mark 72C in the X direction, it is possible to achieve both a reduction in measurement time associated with the binning processing and a high resolution in the measurement direction (Y direction). Therefore, different conditions are set for the binning processing of the first measurement and the second measurement in at least one of the horizontal transfer direction and the vertical transfer direction of the image sensor 75.

[0074] From the above, in the second embodiment, based on the design information of the marks formed on the substrate, the first binning condition and the second binning condition are determined. Then, a first measurement for measuring the first mark on the substrate under the first binning condition and a second measurement for measuring the second mark, which is arranged at a different position on the substrate from the first mark, under the second binning condition are performed to obtain the position information of the substrate. Thereby, the measurement target can be measured at high speed and with high accuracy.

[0075] <Third Embodiment> Next, the measurement process of the third embodiment will be described. In this embodiment, the point of performing precise measurement by the first measurement and the second measurement with different binning conditions is the same as in the second embodiment. Since the difference between this embodiment and the second embodiment lies in the measurement process sequence, the measurement process sequence will be described in detail here, and the description of other contents will be omitted because they are the same as in the second embodiment.

[0076] FIG. 8 is a flowchart of the measurement method in the third embodiment. The measurement method (measurement process) is performed by the control unit CU comprehensively controlling each part of the measuring device 100.

[0077] S701 to S707, and S708 to S710 are the same as S501 to S507, and S509 to S511 described in FIG. 6. In the second embodiment, after the first measurement for measuring the first mark, the second mark arranged at a position different from that of the first mark on the substrate 73 is aligned with the imaging unit 50. In contrast, in this embodiment, after the first measurement is performed at S707, the second measurement is performed at S709 without performing substrate alignment.

[0078] Referring to FIG. 9, a method for precisely measuring the position of the substrate 73 using the first mark and the second mark will be described. FIG. 9 is a diagram showing an image of the mark 72D formed on the detection surface of the imaging element 75. The mark 72D includes a first plurality of line elements 72DX extending in the Y direction corresponding to the vertical transfer direction of the imaging element 75, and a second plurality of line elements 72DY extending in the X direction corresponding to the horizontal transfer direction of the imaging element 75. In the example of FIG. 9, the first plurality of line elements 72DX includes two line elements D1X and D2X for accurately measuring the position in the X direction. The second plurality of line elements 72DY includes two line elements D1Y and D2Y for accurately measuring the position in the Y direction. The mark 72D is an example of a mark capable of simultaneously measuring the positions in the X direction and the Y direction.

[0079] In this embodiment, the first measurement is the measurement of the first plurality of line elements 72DX using the imaging unit 50, and the second measurement is the measurement of the second plurality of line elements 72DY using the imaging unit 50. The control unit CU determines different binning conditions for the first measurement and the second measurement, which are precise measurements, based on the design information of the mark 72D including the first plurality of line elements 72DX and the second plurality of line elements 72DY. Since the method for setting the binning conditions is the same as that in the second embodiment, the description thereof is omitted here.

[0080] In this embodiment, in precise measurement, the control unit CU performs a first measurement in which a first binning condition is set to measure a first plurality of line elements 72DX, and then performs a second measurement in which a second binning condition is set to measure a second plurality of line elements 72DY. Since the second measurement is performed without aligning the substrate after the first measurement, the measurement time can be shortened compared to the second embodiment.

[0081] <Fourth Embodiment> Next, the measurement process of the fourth embodiment will be described. In this embodiment, the point of performing precise measurement by the first measurement and the second measurement with different binning conditions is the same as in the third embodiment. The difference between this embodiment and the third embodiment lies in the measurement process sequence. Therefore, here, the measurement process sequence will be described in detail, and the description of other contents will be omitted because they are the same as in the third embodiment.

[0082] FIG. 10 is a flowchart of the measurement method in the fourth embodiment. The measurement method (measurement process) is performed by the control unit CU comprehensively controlling each part of the measuring device 100.

[0083] S901 to S905 are the same as S701 to S705 shown in FIG. 8, so the description is omitted here. In the third embodiment, for the first plurality of line elements 72DX and the first plurality of line elements 72DY shown in FIG. 9, the first measurement and the second measurement with different binning conditions are performed respectively to obtain the position information of the substrate 73. In contrast, in this embodiment, in S906, a first measurement region in which a first binning condition is set for the detection surface of the imaging element 75 and a second measurement region in which a second binning condition is set are set respectively. For example, the first measurement region is the measurement region of the imaging element 75 including the images of the first plurality of line elements 72DX capable of measuring in the X direction shown in FIG. 9, and the second measurement region is the measurement region of the imaging element 75 including the images of the first plurality of line elements 72DY capable of measuring in the Y direction. Then, in S907, the positions of the marks in the first measurement region and the second measurement region are measured simultaneously.

[0084] In this embodiment, the control unit CU determines different binning conditions for the first measurement and the second measurement, which are precise measurements, based on the design information of the mark 72D including the first plurality of line elements 72DX and the first plurality of line elements 72DY. The first measurement and the second measurement are executed to simultaneously measure the position of the mark 72D in the first measurement region and the second measurement region on the detection surface of the imaging device 75. Therefore, compared with the third embodiment in which the second measurement is performed after the first measurement, the measurement time can be shortened.

[0085] <Fifth Embodiment> The above measurement device can be used for aligning the substrate in a lithography device such as an exposure device or an imprint device. Hereinafter, an example in which the measurement device of the present disclosure is applied to an exposure device, which is an example of a lithography device, will be described.

[0086] FIG. 11 is a schematic diagram showing the configuration of the exposure device EXA. The exposure device EXA is a lithography device that is used in a lithography process, which is a manufacturing process of devices such as semiconductor elements and liquid crystal display elements, and forms a pattern on a substrate 83. The exposure device EXA exposes the substrate 83 through a reticle 31, which is a master mask, and transfers the pattern of the reticle 31 to the substrate 83. In this embodiment, the exposure device EXA employs a step-and-scan method, but it is also possible to employ a step-and-repeat method or other exposure methods.

[0087] As shown in FIG. 11, the exposure device EXA includes an illumination optical system 801, a reticle stage RS that holds the reticle 31, a projection optical system 32, a substrate stage WS that holds the substrate 83, a position measurement device 550, and a control unit 1200.

[0088] The illumination optical system 801 is an optical system that illuminates the surface to be illuminated using the light from the light source unit 800. The light source unit 800 includes, for example, a laser. The laser includes, for example, an ArF excimer laser with a wavelength of about 193 nm, a KrF excimer laser with a wavelength of about 248 nm, etc., but the type of the light source is not limited to excimer lasers. For example, the light source unit 800 may use an F2 laser with a wavelength of about 157 nm or EUV (Extreme ultraviolet) with a wavelength of 20 nm or less as the light source.

[0089] In this embodiment, the illumination optical system 801 shapes the light from the light source unit 800 into slit light having a predetermined shape optimal for exposure, and illuminates the reticle 31. The illumination optical system 801 has a function of uniformly illuminating the reticle 31 and a function of polarized illumination. The illumination optical system 801 includes, for example, a lens, a mirror, an optical integrator, an aperture, etc., and is configured by arranging them in the order of a condenser lens, a fly's eye lens, an aperture stop, a condenser lens, a slit, and an imaging optical system.

[0090] The reticle 31 is made of, for example, quartz. A pattern (circuit pattern) to be transferred to the substrate 83 is formed on the reticle 31.

[0091] The reticle stage RS holds the reticle 31 via a reticle chuck (not shown) and is connected to a reticle drive mechanism (not shown). The reticle drive mechanism includes a linear motor, etc., and can move the reticle 31 held by the reticle stage RS by driving the reticle stage RS in the X-axis direction, Y-axis direction, Z-axis direction, and the rotational directions of each axis. Note that the position of the reticle 31 is measured by a reticle position measuring unit (not shown) of the light obliquely incident system, and is arranged at a predetermined position via the reticle stage RS.

[0092] The projection optical system 32 is arranged such that its optical axis is along the Z direction and has a function of imaging the light from the object plane onto the image plane. In this embodiment, the projection optical system 32 projects the light (diffracted light) that has passed through the pattern of the reticle 31 onto the substrate 83 to form an image of the pattern of the reticle 31 on the substrate. As the projection optical system 32, an optical system composed of a plurality of lens elements, an optical system including a plurality of lens elements and at least one concave mirror (catadioptric optical system), an optical system including a plurality of lens elements and at least one diffractive optical element such as a kinoform, etc. are used.

[0093] A photoresist is applied to the substrate 83. The substrate 83 is a workpiece onto which the pattern of the reticle 31 is transferred and includes a wafer, a liquid crystal substrate, other work substrates, etc.

[0094] The substrate stage WS holds the substrate 83 via a substrate chuck (not shown) and is connected to a substrate drive mechanism (not shown). The substrate drive mechanism includes a linear motor, etc. and can move the substrate 83 held by the substrate stage WS by driving the substrate stage WS in the X-axis direction, Y-axis direction, Z-axis direction and the rotational directions of each axis. Further, a reference plate 39 is provided on the substrate stage WS.

[0095] The position of the substrate stage WS is monitored by, for example, a six-axis laser interferometer 910, etc. and can be driven in synchronization with the driving of the reticle stage RS under the control of the control unit 1200 via the stage control unit 1250.

[0096] The control unit 1200 is composed of a computer (information processing device) including a CPU, a memory, etc., and, for example, controls each part of the exposure apparatus EXA in accordance with a program stored in a storage unit to operate the exposure apparatus EXA. The control unit 1200 controls an exposure process of exposing the substrate 83 through the reticle 31 to transfer the pattern of the reticle 31 to the substrate 83. Further, in this embodiment, the control unit 1200 also controls the measurement process in the position measurement device 550 and the correction process (arithmetic process) of the measurement values obtained by the position measurement device 550. Thus, the control unit 1200 also functions as a part of the position measurement device 550.

[0097] In the exposure apparatus EXA, the light (diffracted light) that has passed through the reticle 31 is projected onto the substrate 83 through the projection optical system 32. The reticle 31 and the substrate 83 are arranged in an optically conjugate relationship. By scanning the reticle 31 and the substrate 83 at the speed ratio of the reduction magnification ratio of the projection optical system 32, the pattern of the reticle 31 is transferred to the substrate 83.

[0098] The position measurement device 550 is a measurement device that measures the position of an object. In this embodiment, the position measurement device 550 measures the positions of a plurality of different marks 82 such as alignment marks provided on the substrate 83. Since the position measurement device 550 has the same configuration as the imaging unit 50 shown in FIG. 1(b), the description thereof is omitted here.

[0099] With reference to FIG. 12, a sequence of an exposure process of exposing the substrate 83 through the reticle 31 to transfer the pattern of the reticle 31 to the substrate 83 will be described. As described above, the exposure process is performed by the control unit 1200 comprehensively controlling each part of the exposure apparatus EXA.

[0100] In S101, the substrate 83 is carried into the exposure apparatus EXA by a transport device (not shown). In S102, the surface (height) of the substrate 83 is detected by a shape measurement device (not shown), and the surface shape of the entire area of the substrate 83 is measured.

[0101] In S103, calibration is performed. Specifically, the control unit 1200 drives the substrate stage WS so that the reference mark is positioned on the optical axis of the position measuring device 550 based on the designed coordinate position of the reference mark provided on the reference plate 39 in the stage coordinate system. Next, the control unit 1200 measures the positional deviation of the reference mark with respect to the optical axis of the position measuring device 550, and based on the positional deviation, re - sets the stage coordinate system so that the origin of the stage coordinate system coincides with the optical axis of the position measuring device 550. Next, the control unit 1200 drives the substrate stage WS so that the reference mark is positioned on the optical axis of the exposure light based on the designed positional relationship between the optical axis of the position measuring device 550 and the optical axis of the projection optical system 32. Then, the control unit 1200 measures the positional deviation of the reference mark with respect to the optical axis of the exposure light through the projection optical system 32 by the TTL (Through - The - Lens) measurement system.

[0102] In S104, the control unit 1200 determines the baseline between the optical axis of the position measuring device 550 and the optical axis of the projection optical system 32 based on the result of the calibration in S103. In S105, the control unit 1200 controls the position measuring device 550 to measure the position of the mark 82 provided on the substrate 83.

[0103] In S106, the control unit 1200 performs global alignment. Specifically, the control unit 1200 calculates the shift, magnification (scale factor), and rotation regarding the arrangement of the shot areas of the substrate 83 based on the measurement result in S105, and obtains the regularity of the arrangement of the shot areas. Then, the control unit 1200 obtains a correction coefficient from the regularity of the arrangement of the shot areas and the baseline, and aligns (aligns) the substrate 83 with respect to the reticle 31 (exposure light) based on the correction coefficient.

[0104] In S107, the control unit 1200 performs exposure of the substrate 83 while scanning the reticle 31 and the substrate 83 in the scanning direction (Y direction). At this time, the control unit 1200 also drives the substrate stage WS in the Z direction and the tilt direction based on the surface shape of the substrate 83 measured by the shape measurement device, and performs an operation of sequentially aligning the surface of the substrate 83 with the imaging surface of the projection optical system 32.

[0105] In S108, the control unit 1200 determines whether exposure for all shot areas of the substrate 83 has been completed (that is, whether there is no unexposed shot area). If the exposure for all shot areas of the substrate 83 has not been completed, the process proceeds to S107, and S107 and S108 are repeated until the exposure for all shot areas is completed. On the other hand, if the exposure for all shot areas of the substrate 83 has been completed, the process proceeds to S109, and the substrate 83 is carried out from the exposure apparatus EXA.

[0106] In the present embodiment, any one of the measurement devices 100 of the first to fourth embodiments is applied to the exposure apparatus EXA. Specifically, the position measurement device 550 may include the imaging unit 50 shown in FIG. 1(b). The functions of the control unit CU described in the first to fourth embodiments can be realized by, for example, the control unit 1200.

[0107] In this embodiment, the position measurement device 550 (i.e., the imaging unit 50) includes a plurality of pixels that detect light from the mark, and forms an imaging region for imaging the mark by the plurality of pixels. The control unit 1200 performs binning processing to obtain the position of the mark based on the output from the imaging unit 50. The control unit 1200 performs measurement processing according to the method according to any one of the first to fourth embodiments. Specifically, the control unit 1200 determines binning conditions based on the design information of the mark, performs first measurement to obtain the position of the mark by setting first binning conditions, and performs second measurement to obtain the position of the mark by setting second binning conditions different from the first binning conditions. Then, the control unit 1200 obtains the position of the substrate based on the results of the first measurement and the second measurement, or the result of the second measurement. Thereby, the measurement target can be measured with high accuracy.

[0108] <Embodiment of article manufacturing method> The article manufacturing method according to an embodiment of the present invention is suitable for manufacturing articles such as microdevices such as semiconductor devices and elements having a fine structure. The article manufacturing method of the present embodiment includes a step of transferring a pattern of a master plate to a substrate using the above-described lithography apparatus (exposure apparatus, imprint apparatus, drawing apparatus, etc.), and a step of processing the substrate on which the pattern has been transferred in such a step. Further, such a manufacturing method includes other well-known steps (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The article manufacturing method of the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article as compared with the conventional method.

[0109] The disclosure of this specification includes at least the following techniques. (Item 1) A measuring device for measuring the position of a mark provided on a substrate, an imaging unit that images the mark using an image sensor, a control unit that obtains the position of the mark based on the results of a first measurement using the imaging unit and a second measurement using the imaging unit performed after the first measurement, and having The control unit determines a first binning condition, which is a condition regarding binning processing in the first measurement, and a second binning condition, which is a condition regarding binning processing in the second measurement, based on the design information of the mark, sets the first binning condition and performs the first measurement, sets the second binning condition and performs the second measurement, The measuring device is characterized by the above. (Item 2) The first measurement is a rough measurement of the relative positional displacement of the substrate with respect to the imaging unit, and the second measurement is a precise measurement of the relative positional displacement. Each of the first binning condition and the second binning condition includes a binning coefficient indicating the number of adjacent pixels to be binned. The control unit determines the first binning condition and the second binning condition such that the binning coefficient specified by the first binning condition is larger than the binning coefficient specified by the second binning condition. The measuring device according to Item 1, characterized by the above. (Item 3) The mark is composed of a plurality of line elements extending in a first direction corresponding to the vertical transfer direction of the imaging element. The design information includes information on the line width of the line element, the pitch between the line elements, and the length of the line element in the first direction. On the detection surface of the imaging element, when the line width is L1, the pitch is P1, the length is L2, the pixel size of the imaging element is Ps, and the binning coefficient is N, the control unit N≦L1 / Ps, N≦P1 / Ps, and N≦L2 / Ps determines so as to satisfy the above. The measuring device according to Item 2, characterized by the above. (Item 4) The mark is composed of a plurality of line elements extending in a first direction corresponding to the vertical transfer direction of the imaging element. The design information includes information on the line width of the line element, the pitch between the line elements, and the length of the line element in the first direction. The binning coefficient includes a first binning coefficient indicating the number of adjacent pixels binned in the first direction and a second binning coefficient indicating the number of adjacent pixels binned in a second direction corresponding to the horizontal transfer direction of the image sensor. On the detection surface of the image sensor, when the line width is L1, the pitch is P1, the length is L2, the pixel size of the image sensor is Ps, the first binning coefficient is Ny, and the second binning coefficient is Nx, the control unit determines the first binning coefficient and the second binning coefficient specified by the first binning condition as Nx ≤ L1 / Ps, Nx ≤ P1 / Ps, and Ny ≤ L2 / Ps to satisfy the above conditions. The measuring device according to item 2 is characterized by this. (Item 5) When the maximum signal intensity detectable in the image sensor is Pi and the signal intensity at which the mark can be measured with the required accuracy is Si, the control unit determines the binning coefficient specified by the first binning condition as N ≤ Pi / Si to further satisfy the above condition. The measuring device according to item 3 is characterized by this. (Item 6) The control unit sets the measurement parameters in the first measurement or the second measurement so that both the signal intensity detected by the image sensor in the first measurement in which the first binning condition is set and the signal intensity detected by the image sensor in the second measurement in which the second binning condition is set fall within the target range. The measuring device according to item 1 is characterized by this. (Item 7) The measurement parameter is the integration time of the image sensor. The measuring device according to item 6 is characterized by this. (Item 8) A light source, An illumination optical system that illuminates the substrate using the light from the light source, A light quantity adjustment unit that adjusts the amount of light for illuminating the substrate by the illumination optical system, further comprising, The measurement parameter is at least any one of the accumulation time of the imaging device, the gain of the imaging device, the light quantity adjustment amount by the light quantity adjustment unit, the output of the light source, and the optical magnification of the imaging unit. The measuring device according to item 6, characterized in that. (Item 9) further comprising a substrate stage that holds and moves the substrate, The control unit performs the first measurement in which the first binning condition is set, and based on the result of the first measurement, controls the substrate stage so that the substrate is aligned with the imaging unit, and then performs the second measurement in which the second binning condition is set. The measuring device according to item 1, characterized in that. (Item 10) The mark includes a first mark composed of a plurality of line elements extending in a first direction corresponding to the vertical transfer direction of the imaging device, and a second mark composed of a plurality of line elements extending in a second direction corresponding to the horizontal transfer direction of the imaging device. The first measurement is a measurement of the first mark using the imaging unit, and the second measurement is a measurement of the second mark using the imaging unit. The first binning condition includes a first binning coefficient indicating the number of adjacent pixels binned in the first direction, and the second binning condition includes a second binning coefficient indicating the number of adjacent pixels binned in the second direction. The measuring device according to item 1, characterized in that. (Item 11) The mark includes a first plurality of line elements extending in a first direction corresponding to the vertical transfer direction of the imaging device, and a second plurality of line elements extending in a second direction corresponding to the horizontal transfer direction of the imaging device. The first measurement is a measurement of the first plurality of line elements using the imaging unit, and the second measurement is a measurement of the second plurality of line elements using the imaging unit. The first binning condition includes a first binning coefficient indicating the number of adjacent pixels to be binned in the first direction, and the second binning condition includes a second binning coefficient indicating the number of adjacent pixels to be binned in the second direction. The measuring device according to item 1, characterized in that. (Item 12) The mark includes a first plurality of line elements extending in a first direction corresponding to the vertical transfer direction of the image sensor, and a second plurality of line elements extending in a second direction corresponding to the horizontal transfer direction of the image sensor. The control unit sets a first measurement region for setting the first binning condition with respect to the detection surface of the image sensor, and a second measurement region for setting the second binning condition with respect to the detection surface. As the first measurement, the first plurality of line elements are measured using the first measurement region. As the second measurement, the second plurality of line elements are measured using the second measurement region. The measuring device according to item 1, characterized in that. (Item 13) A measuring method for measuring the position of a mark based on the results of a first measurement using an imaging unit for imaging a mark provided on a substrate and a second measurement using the imaging unit performed after the first measurement, a step of determining a first binning condition, which is a condition regarding binning processing in the first measurement, and a second binning condition, which is a condition regarding binning processing in the second measurement, based on the design information of the mark; a step of setting the first binning condition and performing the first measurement; a step of setting the second binning condition and performing the second measurement; The measuring method is characterized by comprising. (Item 14) A lithography apparatus for forming a pattern on a substrate, the measuring device according to any one of items 1 to 12 for measuring the position of a mark provided on the substrate; A positioning mechanism for positioning the substrate based on the position of the mark measured using the measurement device; A lithography apparatus, characterized by comprising the same. (Item 15) A step of forming a pattern on a substrate using the lithography apparatus according to Item 14; A step of processing the substrate on which the pattern is formed; An article manufacturing method, characterized by comprising the same and manufacturing an article from the processed substrate.

[0110] The invention is not limited to the above embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, claims are attached to disclose the scope of the invention.

Description of Reference Numerals

[0111] 100: Measurement device, 73: Substrate, WS: Substrate stage, 50: Imaging unit, CU: Control unit

Claims

1. A measuring device for measuring the position of a mark provided on a substrate, comprising: an imaging unit that images the mark using an imaging element; a control unit that obtains the position of the mark based on the result of a first measurement using the imaging unit and a second measurement using the imaging unit performed after the first measurement; and having wherein the control unit determines a first binning condition, which is a condition regarding binning processing in the first measurement, and a second binning condition, which is a condition regarding binning processing in the second measurement, based on the design information of the mark; sets the first binning condition and performs the first measurement; sets the second binning condition and performs the second measurement, characterized in that it is a measuring device.

2. The first measurement is a rough measurement of the relative positional deviation of the substrate with respect to the imaging unit, and the second measurement is a precise measurement of the relative positional deviation. Each of the first binning condition and the second binning condition includes a binning coefficient indicating the number of adjacent pixels to be binned. The control unit determines the first binning condition and the second binning condition such that the binning coefficient specified by the first binning condition is larger than the binning coefficient specified by the second binning condition. The measuring device according to claim 1, characterized in that.

3. The mark is composed of a plurality of line elements extending in a first direction corresponding to the vertical transfer direction of the imaging element. The design information includes information on the line width of the line element, the pitch between the line elements, and the length of the line element in the first direction. On the detection surface of the imaging element, when the line width is L1, the pitch is P1, the length is L2, the pixel size of the imaging element is Ps, and the binning coefficient is N, the control unit N ≤ L1 / Ps, N ≤ P1 / Ps, and N ≤ L2 / Ps is determined so as to satisfy, characterized in that it is the measuring device according to claim 2.

4. The mark is composed of a plurality of line elements extending in a first direction corresponding to the vertical transfer direction of the imaging element. The design information includes information on the line width of the line element, the pitch between the line elements, and the length of the line element in the first direction. The binning coefficient includes a first binning coefficient indicating the number of adjacent pixels binned in the first direction and a second binning coefficient indicating the number of adjacent pixels binned in a second direction corresponding to the horizontal transfer direction of the image sensor. When the line width is L1, the pitch is P1, and the length is L2 on the detection surface of the image sensor, the pixel size of the image sensor is Ps, the first binning coefficient is Ny, and the second binning coefficient is Nx, the control unit uses the first binning coefficient and the second binning coefficient specified by the first binning condition. Nx ≤ L1 / Ps Nx ≤ P1 / Ps, and Ny ≤ L2 / Ps to determine so as to satisfy the above, the measuring device according to claim 2.

5. When the maximum signal intensity detectable in the image sensor is Pi and the signal intensity with which the mark can be measured with the required accuracy is Si, the control unit uses the binning coefficient specified by the first binning condition. N ≤ Pi / Si to further determine so as to satisfy the above, the measuring device according to claim 3.

6. The control unit sets the measurement parameters in the first measurement or the second measurement so that the signal intensity detected by the image sensor in the first measurement in which the first binning condition is set and the signal intensity detected by the image sensor in the second measurement in which the second binning condition is set both fall within a target range. The measuring device according to claim 1, characterized in that.

7. The measurement parameter is the integration time of the image sensor, the measuring device according to claim 6, characterized in that.

8. A light source, An illumination optical system that illuminates the substrate using light from the light source, A light quantity adjustment unit that adjusts the amount of light for illuminating the substrate by the illumination optical system, further having, The measurement parameter is at least one of the integration time of the image sensor, the gain of the image sensor, the light quantity adjustment amount by the light quantity adjustment unit, the output of the light source, and the optical magnification of the imaging unit. The measuring device according to claim 6, characterized in that.

9. further having a substrate stage that holds and moves the substrate, The control unit performs the first measurement in which the first binning condition is set, and based on the result of the first measurement, controls the substrate stage so that the substrate is aligned with the imaging unit, and then performs the second measurement in which the second binning condition is set. The measuring device according to claim 1, characterized in that...

10. The mark includes a first mark composed of a plurality of line elements extending in a first direction corresponding to the vertical transfer direction of the imaging element, and a second mark composed of a plurality of line elements extending in a second direction corresponding to the horizontal transfer direction of the imaging element. The first measurement is the measurement of the first mark using the imaging unit, and the second measurement is the measurement of the second mark using the imaging unit. The first binning condition includes a first binning coefficient indicating the number of adjacent pixels binned in the first direction, and the second binning condition includes a second binning coefficient indicating the number of adjacent pixels binned in the second direction. The measuring device according to claim 1, characterized in that...

11. The mark includes a first plurality of line elements extending in a first direction corresponding to the vertical transfer direction of the imaging element, and a second plurality of line elements extending in a second direction corresponding to the horizontal transfer direction of the imaging element. The first measurement is the measurement of the first plurality of line elements using the imaging unit, and the second measurement is the measurement of the second plurality of line elements using the imaging unit. The first binning condition includes a first binning coefficient indicating the number of adjacent pixels binned in the first direction, and the second binning condition includes a second binning coefficient indicating the number of adjacent pixels binned in the second direction. The measuring device according to claim 1, characterized in that...

12. The mark includes a first plurality of line elements extending in a first direction corresponding to the vertical transfer direction of the imaging element, and a second plurality of line elements extending in a second direction corresponding to the horizontal transfer direction of the imaging element. The control unit sets a first measurement region for setting the first binning condition with respect to the detection surface of the imaging element, and a second measurement region for setting the second binning condition with respect to the detection surface. As the first measurement, the first plurality of line elements are measured using the first measurement region. As the second measurement, the second plurality of line elements are measured using the second measurement region. The measuring device according to claim 1, characterized in that...

13. A measurement method for measuring the position of a mark based on the results of a first measurement using an imaging unit for imaging a mark provided on a substrate and a second measurement using the imaging unit performed after the first measurement. Based on the design information of the mark, determining a first binning condition which is a condition regarding binning processing in the first measurement and a second binning condition which is a condition regarding binning processing in the second measurement; Setting the first binning condition and performing the first measurement; Setting the second binning condition and performing the second measurement; A measurement method characterized by comprising the above.

14. A lithography apparatus for forming a pattern on a substrate, The measurement apparatus according to any one of claims 1 to 12, which measures the position of a mark provided on the substrate; A positioning mechanism for positioning the substrate based on the position of the mark measured using the measurement apparatus; A lithography apparatus characterized by comprising the above.

15. A step of forming a pattern on a substrate using the lithography apparatus according to claim 14; A step of processing the substrate on which the pattern is formed; An article manufacturing method characterized by comprising the above and manufacturing an article from the processed substrate.

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