Multilayer type electronic component

Abstract

To provide a multilayer type electronic component in which an X5R characteristic (TCC characteristic) is satisfied.SOLUTION: The multilayer type electronic component according to one embodiment of the present invention includes: a main body 110 including a dielectric layer 111 and internal electrodes 121 and 122; and external electrodes 131 and 132 disposed on the main body. The dielectric layer includes an acceptor element containing vanadium (V), a donor element containing a rare earth element, and titanium (Ti). When the mol number of the acceptor element per 100 mole of titanium (Ti) is Am, the mol number of the donor element per 100 mole of titanium (Ti) is Dm, and the mol number of vanadium (V) per 100 mole of titanium (Ti) is Vm, 1.2≤Dm / Am≤1.4 and 0.2≤Vm / Dm are satisfied.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present invention relates to a multilayer electronic component.

Background Art

[0002] A multilayer ceramic capacitor (MLCC), which is one type of multilayer electronic component, is a chip-type capacitor that is mounted on a printed circuit board of various electronic products such as video devices like liquid crystal display (LCD) devices and plasma display panel (PDP) panels, computers, smartphones, and mobile phones, and plays a role in charging or discharging electricity.

[0003] Such a multilayer ceramic capacitor can be used as a component of various electronic devices due to its advantages of being small in size while ensuring high capacitance and being easy to mount. As various electronic devices such as computers and mobile devices are miniaturized and have increased output power, the requirements for miniaturization and high capacitance of multilayer ceramic capacitors are increasing.

[0004] The "deterioration" mechanism, which is directly related to the high-speed reliability of multilayer ceramic capacitors, is affected by the movement of oxygen vacancies. In order to suppress such deterioration, research is actively being conducted in the direction of reducing the concentration of oxygen vacancies itself to prevent a decrease in insulation resistance under high-temperature environments (insulation resistance degradation). In order to minimize the decrease in insulation resistance, a fine structure such as core-shell structured crystal grains containing rare earth elements in a certain ratio or more can be realized, and the reliability characteristics of multilayer ceramic capacitors can be improved. However, when rare earth elements are added excessively, there is a risk of degrading the temperature characteristics (TCC characteristics) of multilayer ceramic capacitors, and it is necessary to add an appropriate amount of rare earth elements.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] One of several problems to be solved by the present invention is to provide a multilayer electronic component that satisfies X5R characteristics (TCC characteristics).

[0007] One of several problems to be solved by the present invention is to provide a multilayer electronic component with improved reliability.

[0008] However, several problems to be solved by the present invention are not limited to the above-described content and can be more easily understood in the process of describing specific embodiments of the present invention.

Means for Solving the Problems

[0009] A multilayer electronic component according to an embodiment of the present invention includes a main body including a dielectric layer and internal electrodes, and external electrodes disposed on the main body. The dielectric layer contains an acceptor element containing vanadium (V), a donor element containing a rare earth element, and titanium (Ti). When the number of moles of the acceptor element with respect to 100 moles of the titanium (Ti) is Am, the number of moles of the donor element with respect to 100 moles of the titanium (Ti) is Dm, and the number of moles of the vanadium (V) with respect to 100 moles of the titanium (Ti) is Vm, 1.2 ≤ Dm / Am ≤ 1.4 and 0.2 ≤ Vm / Dm can be satisfied.

Effects of the Invention

[0010] One of several effects of the present invention is to satisfy the X5R characteristics (TCC characteristics) of the multilayer electronic component.

[0011] One of the effects of the present invention is to improve the reliability of the multilayer electronic component.

[0012] However, the various and beneficial advantages and effects of the present invention are not limited to the above-described content, and can be more easily understood in the process of explaining the specific embodiments of the present invention.

Brief Description of the Drawings

[0013]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Modes for Carrying Out the Invention

[0014] Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Also, the embodiments of the present invention are provided to more fully explain the present invention to an ordinary technician. Therefore, the shape, size, etc. of the elements in the drawings can be exaggerated for a clearer explanation, and the elements denoted by the same reference numerals in the drawings are the same elements.

[0015] And, in order to clearly explain the present invention in the drawings, parts not related to the explanation are omitted, and the sizes and thicknesses of each configuration shown in the drawings are arbitrarily shown for convenience of explanation, so the present invention is not necessarily limited to what is shown in the drawings. Note that components having the same function within the scope of the same concept are described using the same reference numerals. Furthermore, throughout the specification, when a certain part says that a certain component "includes", this means that other components can be further included, rather than excluding other components, unless otherwise stated to the contrary.

[0016] In the figure, the first direction can be defined as the stacking direction or the thickness T direction, the second direction as the length L direction, and the third direction as the width W direction.

[0017] Stacked electronic component FIG. 1 schematically shows a perspective view of a stacked electronic component according to an embodiment of the present invention, FIG. 2 schematically shows an exploded perspective view showing the stacked structure of internal electrodes, FIG. 3 schematically shows a cross-sectional view taken along line I-I' of FIG. 1, FIG. 4 schematically shows a cross-sectional view taken along line II-II' of FIG. 1, and FIG. 5 schematically shows an enlarged view of the P region of FIG. 3.

[0018] Hereinafter, with reference to FIGS. 1 to 5, a multilayer electronic component according to an embodiment of the present invention will be described in detail. However, as an example of the multilayer electronic component, a multilayer ceramic capacitor will be described, but the present invention can also be applied to various electronic products using a dielectric composition, such as an inductor, a piezoelectric element, a varistor, or a thermistor.

[0019] A multilayer electronic component 100 according to an embodiment of the present invention includes a main body 110 including a dielectric layer 111 and internal electrodes 121 and 122, and external electrodes 131 and 132 disposed on the main body 110. The dielectric layer 111 contains an acceptor element containing vanadium (V), a donor element containing a rare earth element, and titanium (Ti). When the number of moles of the acceptor element with respect to 100 moles of the titanium (Ti) is Am, the number of moles of the donor element with respect to 100 moles of the titanium (Ti) is Dm, and the number of moles of the vanadium (V) with respect to 100 moles of the titanium (Ti) is Vm, 1.2 ≦ Dm / Am ≦ 1.4 and 0.2 ≦ Vm / Dm can be satisfied.

[0020] The main body 110 may have the dielectric layer 111 and the internal electrodes 121 and 122 alternately laminated.

[0021] More specifically, the main body 110 can include a capacitance forming portion Ac that is disposed inside the main body 110 and includes a first internal electrode 121 and a second internal electrode 122 that are alternately disposed so as to face each other with the dielectric layer 111 interposed therebetween to form capacitance.

[0022] There is no particular limitation on the specific shape of the main body 110. As shown in the drawing, the main body 110 can have a hexahedral shape or a shape similar thereto. Due to the shrinkage of the ceramic particles contained in the main body 110 during the firing process, the main body 110 does not have a perfect hexahedral shape with straight lines, but can have a substantially hexahedral shape.

[0023] The main body 110 can have a first surface 1 and a second surface 2 that face each other in a first direction, a third surface 3 and a fourth surface 4 that are connected to the first surface 1 and the second surface 2 and face each other in a second direction, and a fifth surface 5 and a sixth surface 6 that are connected to the first surface 1, the second surface 2, the third surface 3, and the fourth surface 4 and face each other in a third direction.

[0024] The plurality of dielectric layers 111 forming the main body 110 are in a fired state, and the boundary between adjacent dielectric layers 111 can be integrated to the extent that it is difficult to confirm without using a Scanning Electron Microscope (SEM).

[0025] The raw material for forming the dielectric layer 111 is not limited as long as sufficient capacitance can be obtained. Generally, perovskite (ABO 3 ) - based materials can be used. For example, barium titanate - based materials, lead - composite perovskite - based materials, or strontium titanate - based materials can be used. The barium titanate - based material can contain BaTiO 3 - based ceramic particles. As examples of the ceramic particles, BaTiO 3 , BaTiO 3 in which Ca (calcium), Zr (zirconium), etc. are partially solid - solved (Ba 1-x Ca x )TiO 3 (0 < x < 1), Ba(Ti 1-y Ca y )O 3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O 3 (0 < x < 1, 0 < y < 1) or Ba(Ti 1-y Zr y )O 3 (0 < y < 1), etc. can be mentioned.

[0026] Also, various ceramic additives, organic solvents, binders, dispersants, etc. can be added to particles such as barium titanate (BaTiO 3 ) according to the purpose of the present invention to the raw material for forming the dielectric layer 111.

[0027] The dielectrics of current high-capacity BME MLCCs such as X5R, X7R, X8R, and Y5V are BaTiO 3 base materials, or (Ba 1-x Ca x )(Ti 1-y Ca y )O 3 , (Ba 1-x Ca x )(Ti 1- y Zr y )O 3 , Ba(Ti 1-y Zr y )O 3 and the like, which are co-doped with fixed valence acceptor elements such as Mg and Al, and rare earth elements that serve as donors such as Y, Dy, Ho, and Er, and further added with variable valence acceptor elements such as Mn, V, and Cr, as well as excess Ba, and sintering aids such as SiO 2 or materials sintered by adding this. When firing in a reducing atmosphere, in order to realize the normal capacitance and insulation characteristics of high-capacity MLCCs, suppression of grain growth and reduction resistance must be realized, and it is known that these two effects are realized by adding an appropriate amount of fixed valence acceptor elements such as Mg. However, when only fixed valence acceptor elements such as Mg are added, the breakdown voltage characteristics and reliability of the dielectric may not be good, and by adding both transition metal elements and rare earth elements, which are variable valence acceptor elements such as Mn and V, an effect of improving the breakdown voltage and reliability can be obtained. Most of these elements are co-doped and dissolved in the shell region of the BaTiO 3 base material crystal grains to form a core-shell structure, realizing stable capacitance characteristics and reliability depending on the temperature of the multilayer electronic component.

[0028] In the multilayer electronic component 100 according to an embodiment of the present invention, the dielectric layer 111 can contain an acceptor element containing vanadium (V), a donor element containing a rare earth element, and titanium (Ti). When the number of moles of the acceptor element with respect to 100 moles of the titanium (Ti) is Am, the number of moles of the donor element with respect to 100 moles of the titanium (Ti) is Dm, and the number of moles of the vanadium (V) with respect to 100 moles of the titanium (Ti) is Vm, 1.2 ≦ Dm / Am ≦ 1.4 and 0.2 ≦ Vm / Dm can be satisfied.

[0029] Here, the rare earth element that plays the role of the donor element can contain at least one of dysprosium (Dy), terbium (Tb), yttrium (Y), holmium (Ho), erbium (Er), gadolinium (Gd), cerium (Ce), neodymium (Nd), samarium (Sm), and thulium (Tm). Preferably, it can contain at least one of dysprosium (Dy) and terbium (Tb), and more preferably, it can be at least one of dysprosium (Dy) and terbium (Tb).

[0030] The rare earth element can play a role in suppressing the movement of oxygen vacancies, and by suppressing the movement of oxygen vacancies, deterioration of insulation resistance can be suppressed and reliability can be improved.

[0031] In addition, the acceptor element contains vanadium (V) and can further contain at least one of magnesium (Mg), aluminum (Al), manganese (Mn), chromium (Cr), iron (Fe), nickel (Ni), cobalt (Co), copper (Cu), and zinc (Zn). Preferably, it can further contain at least one of magnesium (Mg), aluminum (Al), and manganese (Mn), and more preferably, it can be at least one of magnesium (Mg), aluminum (Al), and manganese (Mn).

[0032] The acceptor element can play a role in imparting reduction resistance, and among the acceptor elements, vanadium (V) can play a role in effectively satisfying the X5R characteristics.

[0033] When the molar ratio (Dm) of the donor element, the molar ratio (Am) of the acceptor element, and the molar ratio (Vm) of vanadium (V) to 100 moles of titanium (Ti) contained in the dielectric layer 111 satisfy 1.2 ≦ Dm / Am ≦ 1.4 and 0.2 ≦ Vm / Dm, the X5R characteristics (the capacitance in the temperature range of -55°C to 85°C is -15% or more and +15% or less with respect to the capacitance at 25°C) can be satisfied, or the reliability of the multilayer electronic component can be improved.

[0034] When the ratio of Dm / Am is less than 1.2 (Dm / Am < 1.2), there is a risk of reduced reliability, and when the ratio of Dm / Am exceeds 1.4 (1.4 < Dm / Am), there is a risk of not satisfying the X5R characteristics.

[0035] Also, when the ratio of Vm / Dm is less than 0.2, there is a risk of reduced reliability. The upper limit of Vm / Dm is not particularly limited as long as the reliability or the X5R characteristics are satisfied, but the molar ratio (Vm) of vanadium (V) to 100 moles of titanium (Ti) contained in the dielectric layer 111 can satisfy more than 0 moles and 1.0 mole or less, that is, 0 moles < Vm ≦ 1.0 mole.

[0036] At this time, when the molar ratio (Vm) of vanadium (V) exceeds 1.0 mole, there is a risk of reduced reliability.

[0037] On the other hand, the dielectric layer 111 according to an embodiment of the present invention includes dielectric crystal grains 10 having a core-shell structure, and the area fraction of the core 11 with respect to the area of the dielectric crystal grains 10 having the core-shell structure can be 60% or more.

[0038] If it is for improving reliability, the upper limit value of the area fraction of the core 11 is not particularly limited, but it may be 95% or less, 90% or less, or 85% or less. In order to achieve better capacitance characteristics, the upper limit value of the area fraction of the core 11 may be 80% or less.

[0039] In the present invention, the dielectric layer 111 can include a plurality of dielectric crystallites, and the plurality of dielectric crystallites can be conceptually composed of dielectric crystallites 10 having a core-shell structure and dielectric crystallites 20 not having a core-shell structure.

[0040] Also, the dielectric crystallite 10 having a core-shell structure can be a structure including an inner core 11 and a shell 12 surrounding the core 11. Here, the core 11 can mean a region where no rare earth element is detected. For example, it can mean a region where the atomic percentage of the rare earth element is 0 at%. And the shell 12 can mean a region where the atomic percentage of the rare earth element is, for example, more than 0 at% and 0.5 at% or less.

[0041] As an example of a more specific method for measuring the content of each element contained in the dielectric layer 111 or the dielectric crystallite, in the case of a destructive method, the components of the dielectric layer can be analyzed at the center of the chip using measurement equipment such as SEM-EDS, TEM-EDS, or STEM-EDS. First, a thin-sectioned analysis sample is prepared using a focused ion beam (FIB) equipment in the region including the dielectric layer in the cross-section of the sintered body. Then, the damaged layer on the surface of the thin-sectioned sample is removed using xenon (Xe) ion or argon (Ar) ion milling. After that, in the image obtained using SEM, TEM, or STEM, the EDS mode is applied, and the components of the element to be measured are mapped for qualitative / quantitative analysis. In this case, the qualitative / quantitative analysis graph of each component can also be expressed in terms of the mass fraction (wt%), atomic percentage (at%), or mole fraction (mol%) of each element.

[0042] As yet another method, after the chip is pulverized to remove the internal electrodes, the dielectric layer portions are sorted, and the components of the dielectric layer thus sorted can be analyzed using an apparatus such as an inductively coupled plasma optical emission spectrometer (ICP-OES) or an inductively coupled plasma mass spectrometer (ICP-MS).

[0043] By satisfying that the area fraction of the core 11 with respect to the area of the dielectric crystal grains 10 having a core-shell structure is 60% or more, the target dielectric characteristics can be satisfied, the X5R characteristics can be satisfied, or the reliability of the multilayer electronic component can be improved.

[0044] When the area fraction of the core 11 with respect to the area of the dielectric crystal grains 10 having a core-shell structure is less than 60%, it is difficult to achieve the target dielectric characteristics, or it may become difficult to satisfy the X5R characteristics.

[0045] The method for calculating the area fraction of the core 11 with respect to the area of the dielectric crystal grains 10 having a core-shell structure is not particularly limited, but can be as follows. For example, after obtaining an image of the cross-section of the dielectric layer using SEM, TEM, or STEM measurement equipment, each component is observed in the EDS mode. At this time, after observing each component so that the number of all pixels is 100,000 or more, when a pixel with a rare earth element content of 0 at% is defined as the core and a pixel with a rare earth element content exceeding 0 at% and equal to or less than 0.5 at% is defined as the shell, the value obtained by calculating the number of pixels with a rare earth element content of 0 at% with respect to the total number of pixels can be defined as the area fraction of the core with respect to the area of the dielectric crystal grains having a core-shell structure.

[0046] The number of pixels with a rare earth element content of 0 at% in the region other than the core may be negligible, but when the number of pixels with a rare earth element content of 0 at% in the region other than the core increases, among the pixels with a rare earth element content of 0 at% in the region other than the core, only the pixels located inside the crystal grains having a core-shell structure or at the center of the crystal grains having a core-shell structure can be selected to obtain the core fraction.

[0047] The thickness td of the dielectric layer 111 does not need to be particularly limited.

[0048] In order to ensure the reliability of the multilayer electronic component 100 under a high voltage environment, the thickness of the dielectric layer 111 may be 10.0 μm or less. Further, in order to achieve miniaturization and high capacitance of the multilayer electronic component 100, the thickness of the dielectric layer 111 may be 3.0 μm or less. In order to more easily achieve ultra-miniaturization and high capacitance, the thickness of the dielectric layer 111 may be 1.0 μm or less, preferably 0.6 μm or less, and more preferably 0.4 μm or less.

[0049] Here, the thickness td of the dielectric layer 111 can mean the thickness td of at least one of the plurality of dielectric layers 111.

[0050] Note that the thickness td of the dielectric layer 111 can mean the thickness td of the dielectric layer 111 disposed between the first internal electrode 121 and the second internal electrode 122.

[0051] On the other hand, the thickness td of the dielectric layer 111 can mean the size of the dielectric layer 111 in the first direction. Further, the thickness td of the dielectric layer 111 can mean the average thickness td of the dielectric layer 111, and can mean the average size of the dielectric layer 111 in the first direction.

[0052] The average size of the dielectric layer 111 in the first direction can be measured by scanning an image of the cross-section of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average size of one dielectric layer 111 in the first direction can mean the average value calculated by measuring the size in the first direction at 10 equally spaced points in the second direction for one dielectric layer 111 in the scanned image. The 10 equally spaced points can be specified in the capacitance forming portion Ac. Also, when the measurement of such an average value is extended to 10 dielectric layers 111 to measure the average value, the average size of the dielectric layer 111 in the first direction can be further generalized.

[0053] The internal electrodes 121 and 122 may be alternately laminated with the dielectric layer 111.

[0054] The internal electrodes 121 and 122 can include a first internal electrode 121 and a second internal electrode 122, and the first internal electrode 121 and the second internal electrode 122 are alternately arranged so as to face each other with the dielectric layer 111 constituting the main body 110 interposed therebetween, and can be exposed to the third surface 3 and the fourth surface 4 of the main body 110, respectively.

[0055] More specifically, the first internal electrode 121 can be separated from the fourth surface 4 and exposed through the third surface 3, and the second internal electrode 122 can be separated from the third surface 3 and exposed through the fourth surface 4. A first external electrode 131 can be arranged on the third surface 3 of the main body 110 and connected to the first internal electrode 121, and a second external electrode 132 can be arranged on the fourth surface 4 of the main body 110 and connected to the second internal electrode 122.

[0056] That is, the first internal electrode 121 can be connected to the first external electrode 131 without being connected to the second external electrode 132, and the second internal electrode 122 can be connected to the second external electrode 132 without being connected to the first external electrode 131. At this time, the first internal electrode 121 and the second internal electrode 122 can be electrically separated from each other by the dielectric layer 111 arranged in the middle.

[0057] On the one hand, the main body 110 can be formed by alternately laminating a ceramic green sheet printed with a first internal electrode 121 and a ceramic green sheet printed with a second internal electrode 122, and then firing them.

[0058] The materials for forming the internal electrodes 121 and 122 are not particularly limited, and materials with excellent electrical conductivity can be used. For example, the internal electrodes 121 and 122 can include one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0059] Also, the internal electrodes 121 and 122 can be formed by printing a conductive paste for internal electrodes, which includes one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, on a ceramic green sheet. As the printing method of the above conductive paste for internal electrodes, a screen printing method or a gravure printing method can be used, but the present invention is not limited thereto.

[0060] On the other hand, the thickness te of the internal electrodes 121 and 122 does not need to be particularly limited.

[0061] In order to ensure the reliability of the multilayer electronic component 100 in a high-voltage environment, the thickness te of the internal electrodes 121 and 122 may be 3.0 μm or less. Also, in order to achieve miniaturization and high capacitance of the multilayer electronic component 100, the thickness of the internal electrodes 121 and 122 may be 1.0 μm or less. In order to more easily achieve ultra-miniaturization and high capacitance, the thickness of the internal electrodes 121 and 122 may be 0.6 μm or less, and more preferably 0.4 μm or less.

[0062] Here, the thickness te of the internal electrodes 121 and 122 can mean the thickness te of at least one of the plurality of internal electrodes 121 and 122.

[0063] Further, the thickness te of the internal electrodes 121 and 122 can represent the size of the internal electrodes 121 and 122 in the first direction. Also, the thickness te of the internal electrodes 121 and 122 represents the average thickness te of the internal electrodes 121 and 122, and can represent the average size of the internal electrodes 121 and 122 in the first direction.

[0064] The average size of the internal electrodes 121 and 122 in the first direction can be measured by scanning an image of the cross-sections of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average size of one internal electrode in the first direction can be the average value calculated by measuring the size of one internal electrode in the first direction at 10 equally spaced points in the second direction in the scanned image. The 10 equally spaced points can be specified in the capacitance forming portion Ac. Also, when the measurement of such an average value is extended to 10 internal electrodes to measure the average value, the average size of the internal electrodes in the first direction can be further generalized.

[0065] On the other hand, in one embodiment of the present invention, the average thickness td of at least one of the plurality of dielectric layers 111 and the average thickness te of at least one of the plurality of internal electrodes 121 and 122 can satisfy 2×te < td.

[0066] In other words, the average thickness td of one of the dielectric layers 111 may be even greater than twice the average thickness te of one of the internal electrodes 121 and 122. Preferably, the average thickness td of the plurality of dielectric layers 111 may be even greater than twice the average thickness te of the plurality of internal electrodes 121 and 122.

[0067] Generally, for high-voltage electrical components, the main issue is the reliability problem due to the decrease in the breakdown voltage (BDV) in a high-voltage environment.

[0068] Therefore, in order to prevent the breakdown voltage from decreasing in a high-voltage environment, by making the average thickness td of the dielectric layer 111 greater than twice the average thickness te of the internal electrodes 121 and 122, the thickness of the dielectric layer, which is the distance between the internal electrodes, can be increased, and the breakdown voltage characteristics can be improved.

[0069] When the average thickness td of the dielectric layer 111 is less than or equal to twice the average thickness te of the internal electrodes 121 and 122, the average thickness of the dielectric layer, which is the distance between the internal electrodes, becomes thin, and the breakdown voltage may decrease, and there is a possibility of a short circuit occurring between the internal electrodes.

[0070] On the other hand, the main body 110 can include cover portions 112 and 113 disposed on both end surfaces in the first direction of the capacitance forming portion Ac.

[0071] Specifically, it can include a first cover portion 112 disposed on one surface in the first direction of the capacitance forming portion Ac and a second cover portion 113 disposed on the other surface in the first direction of the capacitance forming portion Ac. More specifically, it can include an upper cover portion 112 disposed on the upper part in the first direction of the capacitance forming portion Ac and a lower cover portion 113 disposed on the lower part in the first direction of the capacitance forming portion Ac.

[0072] The upper cover portion 112 and the lower cover portion 113 can be formed by laminating a single dielectric layer 111 or two or more dielectric layers 111 in the first direction on the upper and lower surfaces of the capacitance forming portion Ac, and can basically play a role in preventing damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0073] The upper cover portion 112 and the lower cover portion 113 do not include the internal electrodes 121 and 122 and can include the same material as the dielectric layer 111. That is, the upper cover portion 112 and the lower cover portion 113 can include a ceramic material, for example, a barium titanate (BaTiO 3 )-based ceramic material.

[0074] On the other hand, the thickness tc of the cover parts 112 and 113 does not need to be particularly limited.

[0075] However, in order to more easily achieve miniaturization and high capacity of the multilayer electronic component, the thickness tc of the cover parts 112 and 113 may be 100 μm or less, preferably 30 μm or less, and in the case of ultra-small products, more preferably 20 μm or less.

[0076] Here, the thickness tc of the cover parts 112 and 113 can mean the size of the cover parts 112 and 113 in the first direction. Note that the thickness tc of the cover parts 112 and 113 means the average thickness tc of the cover parts 112 and 113, and can mean the average size of the cover parts 112 and 113 in the first direction.

[0077] The average size of the cover parts 112 and 113 in the first direction can be measured by scanning an image of the cross-section of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, in an image obtained by scanning one cover part, it can mean the average value calculated by measuring the size in the first direction at 10 equally spaced points in the second direction.

[0078] Note that the average size of the cover part in the first direction measured by the above method can have substantially the same size as the average size of the cover part in the first direction in the cross-section of the main body 110 in the first and third directions.

[0079] On the other hand, the multilayer electronic component 100 can include side margin parts 114 and 115 disposed on both end-surfaces of the main body 110 in the third direction.

[0080] More specifically, the side margin parts 114 and 115 can include a first side margin part 114 disposed on the fifth surface 5 of the main body 110 and a second side margin part 115 disposed on the sixth surface 6 of the main body 110.

[0081] As shown in the figure, the side margin portions 114 and 115 can mean the regions between the end - surfaces of the first internal electrode 121 and the second internal electrode 122 in the third direction and the boundary surface of the main body 110, based on the cross - sections of the main body 110 in the first direction and the third direction.

[0082] Alternatively, for the side margin portions 114 and 115, except for the locations where the side margin portions 114 and 115 are formed on the ceramic green sheet applied to the capacitance forming portion Ac, a conductive paste is applied to form the internal electrodes 121 and 122. In order to suppress the step caused by the internal electrodes 121 and 122, after cutting so that the internal electrodes 121 and 122 after lamination are exposed on the fifth surface 5 and the sixth surface 6 of the main body 110, a single dielectric layer 111 or two or more dielectric layers 111 can also be laminated in the third direction on the end - surfaces in the third direction of the capacitance forming portion Ac.

[0083] The side margin portions 114 and 115 can basically play a role in preventing damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0084] The first side margin portion 114 and the second side margin portion 115 do not include the internal electrodes 121 and 122 and can contain the same material as the dielectric layer 111. That is, the first side margin portion 114 and the second side margin portion 115 can contain a ceramic material. For example, they can contain a barium titanate (BaTiO 3 ) - based ceramic material.

[0085] On the other hand, the width wm of the first side margin portion 114 and the second side margin portion 115 does not need to be particularly limited.

[0086] However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component 100, the width wm of the side margin portions 114 and 115 may be 100 μm or less, preferably 30 μm or less, and in the case of ultra - small products, more preferably 20 μm or less.

[0087] Here, the width wm of the side margin portions 114 and 115 can represent the size of the side margin portions 114 and 115 in the third direction. Also, the width wm of the side margin portions 114 and 115 can represent the average width wm of the side margin portions 114 and 115, and can represent the average size of the side margin portions 114 and 115 in the third direction.

[0088] The average size of the side margin portions 114 and 115 in the third direction can be measured by scanning an image of the cross-section of the main body 110 in the first and third directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, in an image of one scanned side margin portion, it can represent the average value calculated by measuring the size in the third direction at 10 equally spaced points in the first direction.

[0089] In one embodiment of the present invention, a structure in which the stacked electronic component 100 has two external electrodes 131 and 132 is described, but the number, shape, etc. of the external electrodes 131 and 132 can be changed according to the form of the internal electrodes 121 and 122 and other purposes.

[0090] The external electrodes 131 and 132 are disposed on the main body 110 and can be connected to the internal electrodes 121 and 122.

[0091] More specifically, the external electrodes 131 and 132 can include a first external electrode 131 and a second external electrode 132 that are respectively disposed on the third surface 3 and the fourth surface 4 of the main body 110 and are respectively connected to the first internal electrode 121 and the second internal electrode 122. That is, the first external electrode 131 can be disposed on the third surface 3 of the main body and connected to the first internal electrode 121, and the second external electrode 132 can be disposed on the fourth surface 4 of the main body and connected to the second internal electrode 122.

[0092] In addition, the external electrodes 131 and 132 can be arranged to extend over a part on the first surface 1 and the second surface 2 of the main body 110, or can be arranged to extend over a part on the fifth surface 5 and the sixth surface 6 of the main body 110. That is, the first external electrode 131 can be arranged on a part on the first surface 1, the second surface 2, the fifth surface 5 and the sixth surface 6 of the main body 110, and on the third surface 3 of the main body 110, and the second external electrode 132 can be arranged on a part on the first surface 1, the second surface 2, the fifth surface 5 and the sixth surface 6 of the main body 110, and on the third surface 3 of the main body 110.

[0093] On the other hand, the external electrodes 131 and 132 may be formed using any material as long as it has electrical conductivity such as metal, and a specific material may be determined in consideration of electrical characteristics, structural stability, etc., and may further have a multilayer structure.

[0094] For example, the external electrodes 131 and 132 can include an electrode layer disposed on the main body 110 and a plating layer disposed on the electrode layer.

[0095] As a more specific example of the electrode layer, the electrode layer can include first electrode layers 131a and 132a which are fired electrodes containing a conductive metal and glass, or can include second electrode layers 131b and 132b which are resin-based electrodes containing a conductive metal and a resin.

[0096] Here, the conductive metal contained in the first electrode layers 131a and 132a can be called the first conductive metal, and the conductive metal contained in the second electrode layers 131b and 132b can be called the second conductive metal. At this time, the first conductive metal and the second conductive metal may be the same as or different from each other. When including a plurality of conductive metals, only a part may contain the same conductive metal, but it is not particularly limited thereto.

[0097] Note that the electrode layers 131a, 132a, 131b, and 132b may be in a form in which a fired electrode and a resin-based electrode are sequentially formed on the main body 110.

[0098] Further, the electrode layers 131a, 132a, 131b, and 132b may be formed by a method of transferring a sheet containing a conductive metal onto the main body, or may be formed by a method of transferring a sheet containing a conductive metal onto a fired electrode.

[0099] As the conductive metal contained in the electrode layers 131a, 132a, 131b, and 132b, a material having excellent electrical conductivity can be used. For example, the conductive metal can include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, but is not particularly limited thereto.

[0100] In one embodiment of the present invention, the electrode layers 131a, 132a, 131b, and 132b can have a two-layer structure including a first electrode layer 131a, 132a and a second electrode layer 131b, 132b. Thus, the external electrodes 131, 132 can include the first electrode layers 131a, 132a containing a first conductive metal and glass, and the second electrode layers 131b, 132b disposed on the first electrode layers 131a, 132a and containing a second conductive metal and a resin.

[0101] The first electrode layers 131a, 132a play a role of improving the bonding property with the main body 110 by including glass, and the second electrode layers 131b, 132b can play a role of improving the bending strength by including resin.

[0102] The first conductive metal contained in the first electrode layers 131a, 132a is not particularly limited as long as it can be electrically connected to the internal electrodes 121, 122 for forming capacitance. For example, it can include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0103] The first electrode layers 131a and 132a can be formed by applying a conductive paste provided by adding glass frit to first conductive metal particles and then firing.

[0104] The second conductive metal contained in the second electrode layers 131b and 132b can serve to be electrically connected to the first electrode layers 131a and 132a.

[0105] The second conductive metal contained in the second electrode layers 131b and 132b is not particularly limited as long as it can be electrically connected to the electrode layers 131a and 132a, and can include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0106] The second conductive metal contained in the second electrode layers 131b and 132b can include one or more of spherical particles and flake-shaped particles. That is, the conductive metal can consist only of flake-shaped particles, or only of spherical particles, or may be in a form in which flake-shaped particles and spherical particles are mixed. Here, the spherical particles can also include forms that are not completely spherical. For example, it can include forms in which the length ratio of the major axis to the minor axis (major axis / minor axis) is 1.45 or less. The flake-shaped particles mean particles having a flat and elongated form, and are not particularly limited. For example, the length ratio of the major axis to the minor axis (major axis / minor axis) may be 1.95 or more. The lengths of the major axis and the minor axis of the above spherical particles and flake-shaped particles can be measured from an image obtained by scanning the cross-sections in the first direction and the second direction cut at the central part in the third direction of the multilayer electronic component with a scanning electron microscope (SEM).

[0107] The resins contained in the second electrode layers 131b and 132b can play a role in ensuring bondability and absorbing shock. The resins contained in the second electrode layers 131b and 132b have bondability and shock absorbency, and are not particularly limited as long as they can be mixed with the second conductive metal particles to form a paste. For example, they can contain epoxy resins.

[0108] Also, the second electrode layers 131b and 132b can contain a plurality of metal particles, intermetallic compounds, and resins. By including intermetallic compounds, the electrical connectivity with the first electrode layers 131a and 132a can be further improved. The intermetallic compound can play a role in connecting a plurality of metal particles to improve electrical connectivity, and can play a role in surrounding and connecting a plurality of metal particles to each other.

[0109] At this time, the intermetallic compound can contain a metal having a melting point lower than the curing temperature of the resin. That is, since the intermetallic compound contains a metal having a melting point lower than the curing temperature of the resin, the metal having a melting point lower than the curing temperature of the resin melts during the drying and curing processes, forms an intermetallic compound with a part of the metal particles, and comes to surround the metal particles. At this time, the intermetallic compound can preferably contain a low-melting-point metal of 300°C or lower.

[0110] For example, it can contain Sn having a melting point of 213 to 220°C. During the drying and curing processes, Sn melts, and the melted Sn wets high-melting-point metal particles such as Ag, Ni, or Cu by capillary action, reacts with a part of the Ag, Ni, or Cu metal particles, and 3 Sn, Ni 3 Sn 4 、Cu 6 Sn 5 、Cu 3 forms intermetallic compounds such as Sn. Ag, Ni, or Cu that did not participate in the reaction remain in the form of metal particles.

[0111] Therefore, the plurality of metal particles contain one or more of Ag, Ni, and Cu, and the intermetallic compound is Ag3 Sn, Ni 3 Sn 4 , Cu 6 Sn 5 and Cu 3 It can contain one or more of Sn.

[0112] The plating layers 131c and 132c can play a role in improving mounting characteristics.

[0113] The types of the plating layers 131c and 132c are not particularly limited, and they may be single-layer plating layers 131c and 132c containing one or more of nickel (Ni), tin (Sn), palladium (Pd), and alloys thereof, or may be formed of a plurality of layers.

[0114] As a more specific example of the plating layers 131c and 132c, the plating layers 131c and 132c may be Ni plating layers or Sn plating layers, or may be in a form in which a Ni plating layer and an Sn plating layer are sequentially formed on the electrode layer, or may be in a form in which an Sn plating layer, a Ni plating layer, and an Sn plating layer are sequentially formed. Also, the plating layers 131c and 132c can also contain a plurality of Ni plating layers and / or a plurality of Sn plating layers.

[0115] The size of the multilayer electronic component 100 does not need to be particularly limited.

[0116] However, in order to simultaneously achieve miniaturization and high capacity, since the thickness of the dielectric layer and the internal electrodes must be reduced and the number of layers increased, the effects according to the present invention can be more remarkable in the multilayer electronic component 100 having a size of 1005 (length × width: 1.0 mm × 0.5 mm) or less.

[0117] Here, the multilayer electronic component 100 having a size of 1005 or less can mean that the average length of the multilayer electronic component is 1.0 mm or less and the average width is 0.5 mm or less, but it does not exactly mean satisfying this, and can be a concept including an error of about 5%.

[0118] (Test Example) Example 1 involves adding a donor element containing rare earth elements such as dysprosium (Dy) and terbium (Tb), an additive containing acceptor elements such as vanadium (V), aluminum (Al), magnesium (Mg), and manganese (Mn), ethanol, toluene, a dispersant, etc. to a dielectric raw material powder containing barium titanate (BaTiO 3 ) powder with a size of about 100 nm or more and 300 nm, and mixing them to provide a dielectric slurry. After that, the dielectric slurry is applied and dried on a carrier film to provide a ceramic green sheet.

[0119] At this time, based on 100 moles of barium titanate (BaTiO 3 ), the ratio (Dm / Am) of the number of moles of the donor element (Dm) to the number of moles of the acceptor element (Am) was weighed and added so as to be 1.2, and the ratio (Vm / Dm) of the number of moles of the vanadium (V) element to the number of moles of the donor element (Dm) was weighed and added so as to be 0.27.

[0120] Then, a conductive paste for the internal electrode was applied on the ceramic green sheet to form an internal electrode pattern, and this was repeatedly laminated to form a laminate. After that, the laminate was pressure-bonded and cut. Then, the cut laminate was heated to remove the binder, and then fired in a high-temperature reducing atmosphere to form a ceramic body.

[0121] The firing process was carried out in a reducing atmosphere (0.1% H 2 / 99.9% N 2 , H 2 O / H 2 / N 2 atmosphere) at a temperature of 1100 °C to 1200 °C for about 1 hour, and then heat-treated by re-oxidation in a 0.03% H 2 atmosphere for 12 hours.

[0122] Next, the fired ceramic body was completed with an external electrode through a termination process and electrode firing with a copper (Cu) paste, and a chip was fabricated.

[0123] At this time, the thickness of the dielectric layer 111 was fabricated to be 1.0 μm or less, and the fraction of the core in the core-shell structured dielectric crystallites was fabricated to be 60% or more.

[0124] Comparative Example 1 was prepared by weighing and charging based on 100 moles of barium titanate (BaTiO 3 ) so that the ratio (Dm / Am) of the number of moles of the donor element (Dm) to the number of moles of the acceptor element (Am) was less than 1.2, and the ratio (Vm / Dm) of the number of moles of the vanadium (V) element to the number of moles of the donor element (Dm) was weighed and charged so as to be less than 0.2. Chips were fabricated in the same manner as in Example 1 described above, except for the input content of the additive.

[0125] For Example 1 and Comparative Example 1, highly accelerated life test (HALT) and temperature coefficient of capacitance (TCC) evaluation of capacitance were performed.

[0126] In the highly accelerated life test (HALT), a temperature condition of 105°C and a voltage condition of 100 V were applied for 100 hours, and chips in which a short circuit occurred were determined to be defective.

[0127] The TCC characteristic graph was shown by measuring the capacitance change rate (%) at -55°C and the capacitance change rate (%) at 85°C based on the capacitance at 25°C (0% reference).

[0128] Fig. 6(a) is the highly accelerated life test (HALT) graph of Example 1, Fig. 6(b) is the highly accelerated life test (HALT) graph of Comparative Example 1, and Fig. 6(c) is the capacitance temperature change (TCC) characteristic graph of Example 1 and Comparative Example 1.

[0129] As can be seen from the comparison between (a) and (b) of FIG. 6, it can be seen that the mean time to failure (MTTF) of Example 1 is longer than that of Comparative Example 1. Thus, it can be seen that when the conditions of 1.2 ≦ Dm / Am ≦ 1.4 and 0.2 ≦ Vm / Dm are satisfied, the reliability is improved.

[0130] Also, as shown in FIG. 6(c), for Comparative Example 1, based on the capacitance at 25°C, the capacitance change rate at -55°C was measured to be -15.83% and at 85°C was -20.21%, which does not meet the X5R characteristics. In contrast, for Example 1, based on the capacitance at 25°C, the capacitance change rate at -55°C was measured to be -14.83% and at 85°C was -13.29%, which meets the X5R characteristics. Thus, it can be seen that when the conditions of 1.2 ≦ Dm / Am ≦ 1.4 and 0.2 ≦ Vm / Dm are satisfied, the X5R characteristics are met.

[0131] Next, Comparative Example 2, Comparative Example 3, and Example 2 were fabricated, and the cross-sections of these dielectric layers were observed by EDS, and it was measured whether the TCC characteristics (X5R) were satisfied according to the core fraction.

[0132] More specifically, FIG. 7(a) is an image obtained by observing dysprosium (Dy) by TEM-EDS for the cross-section of the dielectric layer of the comparative example, FIG. 7(b) is an image obtained by observing dysprosium (Dy) by TEM-EDS for the cross-section of the dielectric layer of another comparative example, and FIG. 7(c) is an image obtained by observing dysprosium (Dy) by TEM-EDS for the cross-section of the dielectric layer of the example.

[0133] The total number of pixels in Comparative Example 2 is 156,228, the number of core pixels is 59,308, and the core fraction corresponds to approximately 38%. The total number of pixels in Comparative Example 3 is 154,186, the number of core pixels is 62,246, and the core fraction corresponds to approximately 40%. The total number of pixels in Example 2 is 148,050, the number of core pixels is 90,818, and the core fraction corresponds to approximately 61%. Here, pixels with an atomic percentage of dysprosium (Dy) of 0 at% were defined as the pixels in the region corresponding to the core, and the area fraction of the core was calculated.

[0134] At this time, for Comparative Example 2 and Example 2, the capacitance change rate due to temperature change was measured. For Comparative Example 2, based on the capacitance at 25°C, the capacitance change rate at -55°C was measured to be -15.83% and the capacitance change rate at 85°C was measured to be -19.21%, and it could not satisfy the X5R characteristics. For Example 2, based on the capacitance at 25°C, the capacitance change rate at -55°C was measured to be -14.83% and the capacitance change rate at 85°C was measured to be -13.19%, and it satisfied the X5R characteristics.

[0135] From this, it can be understood that when the core fraction in the dielectric crystal grains of the core-shell structure satisfies 60% or more, the capacitance change rate due to temperature is improved and the X5R characteristics are satisfied.

[0136] As described above, the embodiments of the present invention have been described in detail. However, the present invention is not limited by the above-described embodiments and the accompanying drawings, but is limited by the appended claims. Therefore, various forms of substitution, modification, and change are possible by those having ordinary knowledge in the art without departing from the technical idea of the present invention described in the claims, and it can be said that these also belong to the scope of the present invention.

[0137] In addition, the expression "one embodiment" used in the present invention does not mean the same embodiment, but is provided to emphasize and explain each different unique feature. However, the one embodiment presented above does not exclude being implemented in combination with the features of other embodiments. For example, even if a matter described in a specific embodiment is not described in other embodiments, it can be understood as an explanation related to other embodiments as long as there is no explanation contrary to or conflicting with that matter in other embodiments.

[0138] The terms used in the present invention are merely used to explain one embodiment and are not intended to limit the present invention. At this time, the singular expression includes plural expressions unless the context clearly indicates a different meaning.

Explanation of reference numerals

[0139] 100: Multilayer electronic component 110: Main body 111: Dielectric layer 112, 113: Cover part 114, 115: Side margin part 121, 122: Internal electrode 131, 132: External electrode

Claims

1. a body including a dielectric layer and an internal electrode; an external electrode disposed on the body; the dielectric layer includes an acceptor element including vanadium (V), a donor element including a rare earth element, and titanium (Ti); When the number of moles of the acceptor element per 100 moles of titanium (Ti) is Am, the number of moles of the donor element per 100 moles of titanium (Ti) is Dm, and the number of moles of the vanadium (V) per 100 moles of titanium (Ti) is Vm, A multilayer electronic component satisfying 1.2≦Dm / Am≦1.4 and 0.2≦Vm / Dm.

2. 2. The multilayer electronic component according to claim 1, wherein Vm satisfies 0 mol<Vm≦1.0 mol.

3. 2. The multilayer electronic component according to claim 1, wherein the rare earth element includes at least one of dysprosium (Dy), terbium (Tb), yttrium (Y), holmium (Ho), erbium (Er), gadolinium (Gd), cerium (Ce), neodymium (Nd), samarium (Sm), and thulium (Tm).

4. 2. The multilayer electronic component according to claim 1, wherein the rare earth element is at least one of dysprosium (Dy) and terbium (Tb).

5. 2. The multilayer electronic component according to claim 1, wherein the acceptor element further includes at least one of magnesium (Mg), aluminum (Al), manganese (Mn), chromium (Cr), iron (Fe), nickel (Ni), cobalt (Co), copper (Cu), and zinc (Zn).

6. the dielectric layer includes dielectric grains having a core-shell structure; 2. The multilayer electronic component according to claim 1, wherein an area ratio of the core to an area of ​​the dielectric crystal grains of the core-shell structure is 60% or more.

7. 7. The multilayer electronic component according to claim 6, wherein the dielectric crystal grains of the core-shell structure contain a rare earth element, and the atomic percentage of the rare earth element in the shell is more than 0 at % and 0.5 at % or less.

8. The dielectric layer is made of barium titanate (BaTiO ３ The multilayer electronic component according to claim 1 , comprising a polysilicon-based dielectric material.

9. 8. The multilayer electronic component according to claim 1, wherein the body includes a plurality of dielectric layers, and at least one of the plurality of dielectric layers has an average thickness of 1.0 μm or less.

10. 8. The multilayer electronic component according to claim 1, wherein the body includes a plurality of internal electrodes, and at least one of the plurality of internal electrodes has an average thickness of 0.6 μm or less.

11. 8. The multilayer electronic component according to claim 1, wherein the average length of the multilayer electronic component is 1.0 mm or less and the average width of the multilayer electronic component is 0.5 mm or less.

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