Photoelectric conversion device, sub-power conversion system, and mobile body

Abstract

To realize both of an AF performance improvement and a layout efficiency improvement.SOLUTION: A photoelectric conversion device includes a plurality of pixels to be arranged in an array shape, and each of the plurality of pixels includes a plurality of photoelectric conversion parts sharing a microlens. The plurality of photoelectric conversion parts of a first pixel from the plurality of pixels are separated each other in a first direction, and the plurality of photoelectric conversion parts of a second pixel of the plurality of pixels is separated each other in a second direction that is different from the first direction. A floating diffusion region is arranged to rows or columns of the photoelectric conversion parts contained into the plurality of pixels, and a well contact is arranged to the other of the row or the column of the photoelectric conversion parts to be contained to the plurality of pixels is arranged.SELECTED DRAWING: Figure 6

Description

Technical Field

[0001] The present invention relates to a photoelectric conversion device, a photoelectric conversion system, and a moving body.

Background Art

[0002] There exists an image sensor having a plurality of photoelectric conversion elements in each pixel for image plane phase difference autofocus (AF). As shown in Patent Document 1, in order to improve AF performance, the arrangement direction (alignment direction) of the photoelectric conversion elements in a pixel in some pixels may be changed from the arrangement direction of the photoelectric conversion elements in a pixel in other pixels.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Patent Document 1 does not describe the arrangement of well contacts in the image sensor, and does not specify a suitable arrangement of well contacts considering the influence of well contacts on pixel characteristics.

Means for Solving the Problems

[0005] One aspect of the present invention has a plurality of pixels arranged in an array, each of the plurality of pixels having a plurality of photoelectric conversion portions sharing a microlens, the plurality of photoelectric conversion portions of the first pixel among the plurality of pixels being separated in a first direction, and the plurality of photoelectric conversion portions of the second pixel among the plurality of pixels being separated in a second direction different from the first direction. A photoelectric conversion device, wherein a floating diffusion region is disposed on one of the columns or rows between the photoelectric conversion portions included in the plurality of pixels, and a well contact is disposed on the other of the columns or rows between the photoelectric conversion portions included in the plurality of pixels.

Effect of the Invention

[0006] According to the present invention, a photoelectric conversion device that takes into account the influence of the well contact on the pixel characteristics is realized.

Brief Description of the Drawings

[0007]

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Embodiments for Carrying Out the Invention

[0008] In each of the embodiments described below, as an example of a photoelectric conversion device, an imaging device will be mainly described. However, each embodiment is not limited to the imaging device and is also applicable to other examples of the photoelectric conversion device. For example, there are a distance measuring device (a device for distance measurement using focus detection or TOF (Time Of Flight)), a photometric device (a device for measuring the incident light amount), and the like.

[0009] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following description, terms indicating a specific direction or position (for example, "up", "down", "right", "left", and other terms including these terms) are used as necessary. The use of these terms is for facilitating the understanding of the embodiments with reference to the drawings, and the technical scope of the present invention is not limited by the meanings of these terms.

[0010] In this specification, a plan view means viewing from a direction perpendicular to the light incident surface of the semiconductor layer. Further, a cross-sectional view means viewing a cross-section perpendicular to the light incident surface of the semiconductor layer. When the light incident surface of the semiconductor layer is a rough surface when viewed microscopically, the plan view is defined based on the light incident surface of the semiconductor layer when viewed macroscopically.

[0011] The semiconductor layer has a first surface and a second surface on the side opposite to the first surface where light is incident. In this specification, the depth direction is the direction from the first surface to the second surface of the semiconductor layer. A transistor is provided on the first surface side of the semiconductor layer, and wiring layers are stacked. Hereinafter, the "first surface" may be referred to as the "surface", and the "second surface" may be referred to as the "back surface". The "depth" of a certain point or region within the semiconductor layer means the distance from the first surface (surface) of that point or region. There is a point (or region) Z1 with a distance (depth) d1 from the first surface and a point (or region) Z2 with a distance (depth) d2 from the first surface. When d1>d2, it may also be expressed as "Z1 is deeper than Z2" or "Z2 is shallower than Z1". Also, there is a point (or region) Z3 with a distance (depth) d3 from the first surface. When d1>d3>d2 holds, it may also be expressed as "Z3 is at a depth between Z1 and Z2" or "Z3 is between Z1 and Z2 in the depth direction".

[0012] Also, the conductivity type of the semiconductor regions and wells and the dopants to be implanted described in the embodiments below are examples, and are not limited to only the conductivity types and dopants described in the embodiments. The conductivity type and dopants described in the embodiments can be appropriately changed, and along with this change, the potentials of the semiconductor regions and wells are appropriately changed.

[0013] Note that the conductivity type of the transistors described in the embodiments below is an example, and is not limited to only the conductivity types described in the description of the embodiments. The conductivity type can be appropriately changed with respect to the conductivity type described in the embodiments, and along with this change, the potentials of the gates, sources, and drains of the transistors are appropriately changed.

[0014] For example, in the case of a transistor that operates as a switch, the low level and high level of the potential supplied to the gate may be reversed with respect to the description in the embodiments as the conductivity type changes. Also, the conductivity type of the semiconductor regions described in the embodiments below is merely an example and is not limited to only the conductivity types described in the embodiments. The conductivity type can be appropriately changed with respect to the conductivity type described in the embodiments, and accordingly, the potential of the semiconductor regions is appropriately changed.

[0015] Also, in the following embodiments, the connection between the elements of the circuit may be described. In this case, even if another element is interposed between the elements of interest, unless otherwise specified, the elements of interest are treated as being connected. For example, suppose that element A is connected to one node of a capacitive element C having a plurality of nodes and element B is connected to the other node. Even in such a case, unless otherwise specified, elements A and B are treated as being connected.

[0016] The metal members such as wirings and pads described in this specification may be composed of a single metal element of a certain element or may be a mixture (alloy). For example, the wiring described as copper wiring may be composed of a single copper or may have a configuration mainly containing copper and further containing other components. Also, for example, the pad connected to an external terminal may be composed of a single aluminum or may have a configuration mainly containing aluminum and further containing other components. The copper wiring and aluminum pad shown here are examples and can be changed to various metals. Also, the wirings and pads shown here are an example of the metal members used in the photoelectric conversion device, and the various material configurations described above can also be applied to other metal members.

[0017] (First Embodiment) The photoelectric conversion device according to the first embodiment will be described with reference to FIGS. 1 to 6.

[0018] FIG. 1 is a schematic top view of the photoelectric conversion device 101 of the present invention. The photoelectric conversion device 101 according to the present embodiment is a so-called backside incident type photoelectric conversion device, and includes a semiconductor layer having a plurality of pixels 102 arranged in an array of a plurality of rows and a plurality of columns, and a wiring structure laminated on the surface side of the semiconductor layer. The photoelectric conversion device 101 may be a stacked type photoelectric conversion device configured by laminating and electrically connecting a sensor substrate and a circuit board that processes a signal output from the sensor substrate. Further, it may be a non-stacked type photoelectric conversion device in which the configuration included in the sensor substrate and the configuration included in the circuit board are arranged on a common semiconductor layer.

[0019] The pixel 102 includes at least two types of pixels, a first pixel 102 and a second pixel 102. The pixel 102 refers to the minimum unit of a circuit that is repeatedly arranged to form an image. The pixel 102 includes at least a photoelectric conversion unit and a pixel circuit. The pixel circuit may include at least one of a transfer transistor, a floating diffusion region (hereinafter referred to as FD), a reset transistor, an amplification transistor, a capacitance connection transistor, and a selection transistor. Typically, a selection transistor and a group of elements connected to a signal line via the selection transistor constitute the pixel 10. That is, the selection transistor may be the outer edge of the pixel circuit.

[0020] FIGS. 2(a) and 2(b) are plan views of the first pixel 102 and the second pixel 102, respectively. The elements arranged in each pixel 102 are represented as a plan view seen from the surface side of the semiconductor substrate. The elements overlapping each element are also shown by broken lines for explanation.

[0021] The first pixel 102 shown in FIGS. 2(a) and 2(b) includes a backside N-type semiconductor region 107 that photoelectrically converts incident light, and a surface-side N-type semiconductor region 108 for accumulating electrons generated by photoelectric conversion. The backside N-type region 107 and the surface-side N-type region 108 are connected by an N-type connection region 109 made of an N-type semiconductor region. The charges photoelectrically converted in the backside N-type region 107 move to the surface-side N-type region 108 via the N-type connection region 109. Hereinafter, the "N-type semiconductor region" will be simply described as the "N-type region".

[0022] Here, the backside N-type region 107 is separated by the first separation portions 111(a) and 111(b) into the first photoelectric conversion portions 103(a) and 103(b) and the second photoelectric conversion portions 104(a) and 104(b). The first photoelectric conversion portion 103(a) and the second photoelectric conversion portion 104(a), and the first photoelectric conversion portion 103(b) and the second photoelectric conversion portion 104(b) each share one microlens 110.

[0023] In a pixel configuration in which a plurality of photoelectric conversion portions (photoelectric conversion elements) are arranged for one microlens for image plane phase difference AF, the pattern of a subject that is easy to detect varies depending on the arrangement direction of the photoelectric conversion elements. For example, when a plurality of photoelectric conversion elements are arranged in the column direction, it becomes easier to focus on a subject having vertical stripe contrast, but it is difficult to focus on a subject having horizontal stripe contrast. Therefore, by arranging pixels in which the photoelectric conversion elements are arranged in a direction different from the column direction (for example, the row direction), a sensor that is easier to focus on a larger number of subject patterns is realized.

[0024] FIG. 2(a) is a pixel in which the first separation portion 111(a) having a longitudinal direction in a direction intersecting the first direction is arranged so that the first photoelectric conversion portion 103(a) and the second photoelectric conversion portion 104(a) are arranged in the first direction (11 direction). Such an arrangement results in a configuration that is easy to focus on a subject having vertical stripe contrast.

[0025] On the other hand, FIG. 2(b) is a pixel in which the first separation portion 111(b) having a longitudinal direction in a direction intersecting the second direction is arranged so that the first photoelectric conversion portion 103(b) and the second photoelectric conversion portion 104(b) are arranged in a second direction (12 direction) different from the first direction. In such an arrangement, it becomes a configuration that is easy to focus on a subject having horizontal stripe contrast.

[0026] Here, although the arrangement directions of the separated back-side N-type regions 107 are different between the pixels in FIG. 2(a) and the pixels in FIG. 2(b), the arrangement direction of the separated front-side N-type regions 108 is the same between the pixels in FIG. 2(a) and the pixels in FIG. 2(b). By adopting such a configuration, not only the front-side N-type region 108 but also the arrangements of the transfer gates 105 and FDs 106 of the transfer transistors can be made the same between the pixels in FIG. 2(a) and the pixels in FIG. 2(b). By making the arrangements of the transfer gates 105 and FDs 106 the same for each pixel, the difference in transfer characteristics due to variations in ion implantation during manufacturing can be suppressed. Also, since the wiring layers can be created with a certain repeating unit, the design of the transistors and wirings in the pixel portion becomes easier.

[0027] Using FIG. 3, arrangement examples of a plurality of types of pixels 102 with different arrangement directions (alignment directions) of the back-side N-type regions 107 are shown. Each of FIGS. 3(a) to 3(c) is an arrangement example of the pixels 102 in the photoelectric conversion device 101, and the direction of the arrow represents the arrangement direction of the back-side N-type region 107.

[0028] FIG. 3(a) shows a photoelectric conversion device 101 in which a plurality of pixels having two back-side N-type regions 107 arranged in the 11 direction as shown in FIG. 2(a) are arranged side by side. FIG. 3(b) shows a photoelectric conversion device 101 in which a plurality of pixels having two back-side N-type regions 107 arranged in the 12 direction as shown in FIG. 2(b) are arranged side by side. FIG. 3(c) shows an example of a photoelectric conversion device 101 in which a plurality of pixels having two back-side N-type regions 107 arranged in the 11 direction and a plurality of pixels having two back-side N-type regions 107 arranged in the 12 direction are arranged in a checkerboard pattern.

[0029] As described above, depending on the arrangement direction of the back-side N-type region 107, the direction of the stripes where the subject is likely to be in focus is determined. Therefore, in the photoelectric conversion device of FIG. 3(a), AF can be performed at high speed and with high accuracy for a subject with vertical stripes, and in the photoelectric conversion device of FIG. 3(b), AF can be performed at high speed and with high accuracy for a subject with horizontal stripes. In the photoelectric conversion device of FIG. 3(c) in which a plurality of types of pixels with different arrangement directions of the back-side N-type regions 107 are mixed, AF can be performed at high speed and with high accuracy for each of the subject patterns of vertical stripes and horizontal stripes.

[0030] The arrangement of the pixels is not limited to this. For example, a configuration may be adopted in which a plurality of blocks each having pixels with the backside N-type regions 107 arranged in 11 directions and a plurality of blocks each having pixels with the backside N-type regions 107 arranged in 12 directions are arranged in a checkered pattern. Also, in the above description, the first direction and the second direction in which the plurality of backside N-type regions 107 are arranged are orthogonal to each other. However, for example, a configuration may be adopted in which the plurality of backside N-type regions 107 are arranged such that the first direction and the second direction intersect at an angle other than 90°, such as 45° or 30°.

[0031] FIG. 4(a) shows a plan view of the first pixel 102 in the present embodiment. FIGS. 4(b), (c), (d), and (e) show schematic views of four cross-sections of the first pixel 102 in the present embodiment. The cross-section A-A' shown in FIG. 4(a) corresponds to FIG. 4(b), and the cross-section B-B' corresponds to FIG. 4(c). Similarly, the cross-section C-C' corresponds to FIG. 4(d), and the cross-section D-D' corresponds to FIG. 4(e). Also, in FIG. 4, the backside N-type region 107 will be described by appropriately rephrasing it as the second semiconductor region 202, and the frontside N-type region 108 as the first semiconductor region 201.

[0032] As shown in FIG. 4(b), in the cross-section A-A' of FIG. 4(a), the pixel 102 has, in order from the backside, a fifth semiconductor region 205, a second semiconductor region 202, a first separation portion 111, a third semiconductor region 203, a fourth semiconductor region 204, a first semiconductor region 201, and a sixth semiconductor region 206.

[0033] The light that has passed through the microlens 110 is incident on the pixel 102 from the back side, and is photoelectrically converted in a region formed by an N-type (first conductivity type) second semiconductor region 202 in the pixel 102. The electrons generated by the photoelectric conversion move along the potential gradient through the N-type connection region 109 to the N-type first semiconductor region 201 and are accumulated. The N-type impurity concentration of the first semiconductor region 201 is higher than the N-type impurity concentration of the second semiconductor region 202. A P-type (second conductivity type) third semiconductor region 203 is disposed between the first semiconductor region 201 and the second semiconductor region 202 in the depth direction, thereby restricting the movement path of the signal charge from the second semiconductor region 202 to the first semiconductor region 201 to the N-type connection region 109. By doing so, even when the arrangement directions of the plurality of back-side N-type regions 107 and the arrangement directions of the plurality of front-side N-type regions 108 are different, charges can be moved to the desired first semiconductor region.

[0034] A P-type fourth semiconductor region 204 is disposed at the boundary portion adjacent to another pixel 102 of each pixel 102 for the purpose of suppressing charge crosstalk with the adjacent other pixel. Also, a P-type fifth semiconductor region 205 and a P-type sixth semiconductor region 206 are disposed near the back surface and the front surface of the semiconductor layer, respectively, for the purpose of suppressing dark current.

[0035] A first separation portion 111 is disposed between the first photoelectric conversion portion 103 and the second photoelectric conversion portion 104 disposed in one pixel 102. The first separation portion 111 for suppressing charge crosstalk between the N-type first photoelectric conversion portion 103 and the N-type second photoelectric conversion portion 104 may be a P-type semiconductor region or a separation portion including a trench structure. By making it a separation portion including a trench structure, an optical crosstalk suppressing configuration is achieved.

[0036] Similarly, the first semiconductor region 201 is also separated by a second separation portion 112 so as to correspond to each of the first photoelectric conversion portion 103 and the second photoelectric conversion portion 104. In the pixel 102 shown in FIG. 4, the extending directions of the first separation portion 111 and the second separation portion 112 coincide.

[0037] Similarly, with respect to the cross section in the B-B' cross section of FIG. 4(a) shown in FIG. 4(c) and the cross section in the C-C' cross section of FIG. 4(a) shown in FIG. 4(d), electrons generated in the second semiconductor region 202 are accumulated in the first semiconductor region 201 through the N-type connection region 109.

[0038] As shown in FIG. 4(e), the D-D' cross section of FIG. 4(a) shows a configuration in which a well contact 301 for supplying a potential to the well is provided between adjacent pixels 102 on the left and right. Here, the well is a region formed by implanting impurities at the transistor formation location, and the well contact 301 supplies a voltage to the fourth semiconductor region 204 via the sixth semiconductor region 206. Since the well contact 301 can be a source of dark current, it is desirable that it be formed away from the first semiconductor region 201 where signal charges are accumulated. Specifically, the dark current can be suppressed by arranging the well contact 301 at a position closer to the substrate surface, which is shallower than the first semiconductor region 201 closer to the back surface of the substrate, and not arranging the well contact 301 and the first semiconductor region 201 at the same position in the depth direction.

[0039] Also, by forming a P-type semiconductor region around the well contact 301, the generated dark current can be recombined to suppress the dark current. A high-concentration P-type semiconductor region is formed around the well contact 301 to make contact with the semiconductor substrate (semiconductor layer). Further, in order to enhance the dark current suppression effect, a configuration may be adopted in which part or all of the well contact 301 overlaps with the sixth semiconductor region 206 in a plan view. In addition, the well contact 301 may be disposed in a region where the sixth semiconductor region 206 and a part thereof overlap in the depth direction. FIG. 5(a) shows a plan view of the second pixel 102 in the present embodiment. FIGS. 5(b), (c), (d), and (e) show schematic diagrams of four cross-sections of the second pixel 102 in the present embodiment. The cross-section A-A' shown in FIG. 5(a) corresponds to FIG. 5(b), the cross-section B-B' corresponds to FIG. 5(c), the cross-section C-C' corresponds to FIG. 5(d), and the cross-section D-D' corresponds to FIG. 5(e). In FIG. 5, the back-side N-type region 107 is described by appropriately rephrasing it as the second semiconductor region 202, and the front-side N-type region 108 is described as the first semiconductor region 201. The description of the same configuration as the pixel configuration described in FIG. 4 is omitted, and the difference between the first pixel 102 shown in FIG. 4 and the second pixel 102 will be described.

[0040] In the second pixel 102 of FIG. 5, the arrangement direction (alignment direction) of the back-side N-type region 107 is different from that of the first pixel in FIG. 4. That is, the extending direction of the first separation portion 111 is different between the first pixel 102 shown in FIG. 4 and the second pixel 102 shown in FIG. 5.

[0041] As shown in FIGS. 5(b) and (c), the electrons generated by the photoelectric conversion in the second semiconductor region 202 in the cross-sections A-A' and B-B' of FIG. 5(a) move through the N-type connection region 109 to the first semiconductor region 201 and are accumulated. The first semiconductor region 201 is separated into two parts by the second separation portion 112.

[0042] On the other hand, as shown in FIG. 5(d), in the C-C' cross section of FIG. 5(a), the second semiconductor region 202 is separated into two parts by the first separation portion 111. That is, in the second pixel 102 shown in FIG. 5, in a plan view of the semiconductor layer, the extending directions of the first separation portion 111 and the second separation portion 112 are different, and the extending directions of the first separation portion 111 of the first pixel 102 and the first separation portion 111 of the second pixel 102 are different.

[0043] By changing the arrangement direction of the backside N-type region 107, when performing image plane phase difference AF, the direction in which phase difference detection is possible can be changed. Since the phase difference detection direction can be changed without changing the arrangement direction of the front side N-type region 108, the arrangements of the transfer gate 105 and the FD 106 can be made uniform for each pixel. Therefore, even in a plurality of pixels in which the arrangement directions of the backside N-type regions 107 are different from each other, it is possible to suppress the transfer characteristic difference due to ion implantation variation during transistor manufacturing. In addition, since the wiring layer can be formed with a certain repeating unit, the design of the transistors and wirings in the pixel portion becomes easy.

[0044] As shown in FIG. 5(e), the D-D' cross section of FIG. 5(a) shows a configuration in which a well contact 301 for supplying a potential to the well is provided between adjacent pixels 102 on the left and right.

[0045] Since the well contact 301 can be a source of dark current, it is desirable that the well contact 301 is formed away from the first semiconductor region 201 in which the signal charges are accumulated. Specifically, the well contact 301 and the first semiconductor region 201 are not arranged at the same position in the depth direction, and the dark current can be suppressed by arranging the well contact 301 at a position closer to the substrate surface and shallower than the first semiconductor region 201 closer to the back surface of the substrate.

[0046] In addition, by forming a P-type semiconductor region around the well contact 301, the generated dark current can be recombined to suppress the dark current. A high-concentration P-type semiconductor region is formed around the well contact 301 to make contact with the semiconductor substrate (semiconductor layer). Further, in order to enhance the dark current suppression effect, a part or all of the well contact 301 may overlap with the sixth semiconductor region 206 in a plan view. In addition, the well contact 301 may be disposed in a region where the sixth semiconductor region 206 and a part thereof overlap in the depth direction.

[0047] FIG. 6 shows a plan view of the first pixel 102 and the second pixel 102 in the present embodiment. With reference to FIG. 6, the arrangement of a plurality of well contacts 301 in the photoelectric conversion device of the present embodiment, including the first pixel 102 and the second pixel 102, will be described.

[0048] FIG. 6 shows the first pixel 102 and the second pixel 102 in one pixel row among a plurality of pixels 102 arranged in an array of a plurality of rows and a plurality of columns in the photoelectric conversion device.

[0049] As shown in FIG. 6, in the configuration where the FD 106 is provided above the pixel 102 in a plan view, the FD 106 is arranged between the rows of the photoelectric conversion units included in adjacent pixels, and the pixel transistor 302 is provided between the columns of the photoelectric conversion units included in adjacent pixels. The pixel transistor 302 is, for example, a selection transistor for reading charges from the pixel.

[0050] Well contacts 301 are arranged between the photoelectric conversion units included in the pixels to apply a well potential to the wells of the plurality of pixels 102 arranged in an array in the photoelectric conversion device. By arranging the well contacts 301 in the pixel array, a reference well potential is applied to the P-type fourth semiconductor region 204 in the pixel 102.

[0051] In the photoelectric conversion device according to the present embodiment, from the viewpoint of layout efficiency, the well contact 301 is arranged not between the rows of the photoelectric conversion units included in adjacent pixels where the FD106 is arranged, but between the columns of the photoelectric conversion units included in adjacent pixels. Thereby, the well contact 301 does not interfere with the FD106 and the pixel transistor 302 arranged around it.

[0052] Although an example has been described with reference to FIG. 6 in which the FD106 is arranged between the rows of the photoelectric conversion units included in the pixels and the well contact 301 is arranged between the columns of the photoelectric conversion units included in the pixels, the FD106 is arranged between the columns of the photoelectric conversion units included in adjacent pixels, and the well contact 301 is arranged between the rows of the photoelectric conversion units included in adjacent pixels, a similar effect of improving the layout efficiency can be obtained.

[0053] As shown in FIG. 6, the well contact 301 may be arranged at a position sandwiched between two of the plurality of pixel transistors 302 arranged in the second direction (direction 12, column direction). Considering arranging the well contact 301 between the columns of the photoelectric conversion units included in adjacent pixels and supplying a well potential to each pixel, it is desirable that the well contact 301 be arranged near the same position as the center of the pixel with respect to the direction 12. In other words, when two line segments extending in the first direction 11 (direction 11, row direction) are arranged so that the area of the pixel 102 is divided into three equal parts, it is desirable that the well contact 301 be arranged in the region sandwiched between these two line segments.

[0054] From the viewpoint of layout efficiency, it is desirable that the well contact 301 be arranged near the same position as the center of the pixel with respect to the direction 12.

[0055] When the well contact 301 is arranged above or below the pixel with respect to the second direction 12, the layout symmetry with the pixel transistor 302 arranged adjacent to the direction 12 is impaired. On the other hand, when the well contact 301 is arranged near the center of the pixel with respect to the direction 12, the layout symmetry is maintained when the pixel transistors 302 are arranged above and below it. Thereby, variations in characteristics can be suppressed with respect to the plurality of pixel transistors 302.

[0056] For example, as shown in FIG. 6, the well contact 301 may be arranged near the center of the pixel with respect to the direction 12, and the same type of pixel transistors 302 may be arranged so as to sandwich the well contact 301 with respect to the direction 12. Here, the same type of transistor means that the functions borne by the transistors are the same. For example, a well contact 301 is arranged between a first selection transistor for reading the charge of the first pixel 102 and a second selection transistor for reading the charge of the second pixel 102.

[0057] Also, in the pixel on the left side of FIG. 6 and its periphery, since the first separation portion 111 is supplied with a potential from the left well contact 301, it is desirable that they be arranged close to each other. It is desirable that a line segment passing through the center of the first separation portion and a part of the well contact 301 overlap in a plan view, but it is not necessarily required to be such an arrangement, and a certain degree of deviation is allowed from the viewpoint of potential supply. Specifically, if the distance is about the same as the width of the separation portion between the pixels, the well contact 301 may be separated from the line segment passing through the center of the first separation portion. For example, when the width of the fourth semiconductor region 204 is 1 μm, the well contact 301 may be separated from the first separation portion 111 by 1 μm. It is desirable that at least a part of the well contact 301 be arranged in a region within 1 μm with respect to the direction 12 from the extension line extending the first separation portion 111, and it is even better if the line segment passing through the center of the first separation portion and the line segment passing through the center of the well contact 301 overlap.

[0058] (Second Embodiment) The second embodiment of the present invention will be described with reference to FIG. 7. The photoelectric conversion device shown in the second embodiment has a different arrangement of the well contacts 301 compared to the photoelectric conversion device shown in the first embodiment.

[0059] As the first embodiment, a configuration in which well contacts 301 are arranged between all pixel columns was shown. By arranging well contacts 301 between all pixel columns, stable potential supply can be expected, but there is a concern that the dark current caused by the well contacts 301 increases. In contrast, in this embodiment, the well contacts 301 are arranged every other pixel column. When the well contacts 301 are arranged every other pixel column, the number of well contacts 301 arranged in the pixel array can be reduced, so that the dark current caused by the well contacts 301 can be suppressed.

[0060] Also, as shown in FIG. 7, the columns in which the well contacts 301 are arranged and the columns in which the well contacts 301 are not arranged may be made different for each row. The arrangement of the well contacts 301 is not limited to this. This makes it possible to further reduce the number of well contacts 301, and the dark current is suppressed.

[0061] Even in the arrangement of the well contacts 301 as in this embodiment, a more efficient layout is realized by arranging the FD106 between columns.

[0062] (Third Embodiment) The third embodiment of the present invention will be described with reference to FIG. 8.

[0063] In the photoelectric conversion devices according to the first and second embodiments, in a plan view, the well contacts 301 and the photoelectric conversion unit 103 are arranged in a continuous semiconductor region. That is, no separation structure is provided between the well contacts 301 and the photoelectric conversion unit 103.

[0064] In the photoelectric conversion device according to the third embodiment, the semiconductor region where the first photoelectric conversion unit 103 and the second photoelectric conversion unit 104 are arranged and the semiconductor region where the well contact 301 is arranged are separated by a separation structure 302. Examples of the separation structure include separation by an insulating layer such as LOCOS or STI. By arranging a separation structure 302 made of an insulating layer surrounding the well contact 301 between the first photoelectric conversion unit 103 and the second photoelectric conversion unit 104 and the well contact 301, the dark current generated in the well contact 301 can be suppressed from flowing into the photoelectric conversion element 103.

[0065] (Fourth Embodiment) The fourth embodiment of the present invention will be described with reference to FIG. 9.

[0066] As shown in FIG. 9, this embodiment is different from the first to third embodiments in that the first photoelectric conversion unit 103 and the second photoelectric conversion unit 104 constituting the pixel 102 are arranged at an angle of 45° with respect to the arrangement direction of a plurality of pixels.

[0067] Since the direction in which the phase difference can be detected is determined by the arrangement direction (alignment direction) of the back-side N-type region 107, pixels having a pair of photoelectric conversion units arranged at 45° shown in FIG. 9, for example, pixels having a pair of photoelectric conversion units arranged at 0° in the first embodiment and pixels having a pair of photoelectric conversion units arranged at 90° are arranged in the photoelectric conversion device, so that high-speed and high-precision AF can be realized for more subjects.

[0068] Also in this embodiment, by arranging the well contact 301 on the extension line of the first separation unit 111, more stable potential supply and suppression of dark current are achieved. Further, although not shown in FIG. 9, when the FD 106 is arranged between pixel rows, by adopting a structure in which the well contact 301 is arranged between pixel columns, a more efficient layout arrangement is obtained.

[0069] (Fifth Embodiment) The fifth embodiment of the present invention will be described with reference to FIGS. 10 and 11. In contrast to the first to fourth embodiments, in this embodiment, for the plurality of photoelectric conversion elements 103 arranged in the pixel, the arrangement directions of the front-side N-type region 108 and the back-side N-type region 107 are the same.

[0070] By arranging pixels in which the arrangement directions of the front-side N-type region 108 and the back-side N-type region 107 are different from those of other pixels together with other pixels in the photoelectric conversion device, the surface-side structure can be made uniform for each pixel and the phase difference detection direction can be changed. On the other hand, by forming the front-side N-type region 108 and the back-side N-type region 107 in the same direction, pixels can be formed in an easier process.

[0071] FIG. 10 shows a pixel in which the first photoelectric conversion unit 103 and the second photoelectric conversion unit 104 are arranged in 11 directions (row direction) that are easy for phase difference detection with respect to a vertically striped subject. FIG. 11 shows a pixel in which the first photoelectric conversion unit 103 and the second photoelectric conversion unit 104 are arranged in 12 directions (column direction) that are easy for phase difference detection with respect to a horizontally striped subject. By arranging the pixels shown in FIG. 10 and the pixels shown in FIG. 11 in the pixel array, phase difference detection in a plurality of directions becomes easy.

[0072] Even in such a pixel configuration, by arranging the FD 106 between pixel rows and arranging the well contact 301 between pixel columns, a more efficient layout arrangement becomes possible.

[0073] (Sixth Embodiment) The photoelectric conversion system according to this embodiment will be described with reference to FIG. 12. FIG. 12 is a block diagram showing a schematic configuration of the photoelectric conversion system according to this embodiment.

[0074] The photoelectric conversion devices described in the first to fifth embodiments can be applied to various photoelectric conversion systems. Examples of applicable photoelectric conversion systems include digital still cameras, digital camcorders, surveillance cameras, copiers, fax machines, mobile phones, in-vehicle cameras, observation satellites, and the like. Also included in the photoelectric conversion system is a camera module that includes an optical system such as a lens and an imaging device. FIG. 13 illustrates a block diagram of a digital still camera as an example of these.

[0075] The photoelectric conversion system illustrated in FIG. 12 has an imaging device 1004, which is an example of a photoelectric conversion device, and a lens 1002 that forms an optical image of a subject on the imaging device 1004. Further, it has a diaphragm 1003 for variably controlling the amount of light passing through the lens 1002 and a barrier 1001 for protecting the lens 1002. The lens 1002 and the diaphragm 1003 are an optical system that condenses light onto the imaging device 1004. The imaging device 1004 is a photoelectric conversion device (imaging device) according to any of the above embodiments, and converts the optical image formed by the lens 1002 into an electrical signal.

[0076] The photoelectric conversion system also has a signal processing unit 1007, which is an image generation unit that generates an image by processing the output signal output from the imaging device 1004. The signal processing unit 1007 performs operations such as various corrections and compressions as necessary to output image data. The signal processing unit 1007 may be formed on the semiconductor substrate on which the imaging device 1004 is provided, or may be formed on a semiconductor substrate different from the imaging device 1004. Also, the imaging device 1004 and the signal processing unit 1007 may be formed on the same semiconductor substrate.

[0077] The photoelectric conversion system further includes a memory unit 1010 for temporarily storing image data and an external interface unit (external I / F unit) 1013 for communicating with an external computer or the like. The photoelectric conversion system further includes a recording medium 1012 such as a semiconductor memory for recording or reading imaging data, and a recording medium control interface unit (recording medium control I / F unit) 1011 for recording or reading from the recording medium 1012. Note that the recording medium 1012 may be built into the photoelectric conversion system or may be detachable.

[0078] The photoelectric conversion system further includes an overall control and arithmetic unit 1009 for performing various operations and controlling the entire digital still camera, and a timing generation unit 1008 for outputting various timing signals to the imaging device 1004 and the signal processing unit 1007. Here, the timing signals and the like may be input from the outside, and the photoelectric conversion system may have at least the imaging device 1004 and the signal processing unit 1007 that processes the output signal output from the imaging device 1004.

[0079] The imaging device 1004 outputs an imaging signal to the signal processing unit 1007. The signal processing unit 1007 performs predetermined signal processing on the imaging signal output from the imaging device 1004 and outputs image data. The signal processing unit 1007 generates an image using the imaging signal.

[0080] As described above, according to this embodiment, a photoelectric conversion system to which the photoelectric conversion device (imaging device) of any of the above embodiments is applied can be realized.

[0081] (Seventh Embodiment) The photoelectric conversion system and the moving body of this embodiment will be described with reference to FIG. 13. FIG. 13 is a diagram showing the configuration of the photoelectric conversion system and the moving body of this embodiment.

[0082] FIG. 13(a) shows an example of a photoelectric conversion system related to an in-vehicle camera. The photoelectric conversion system 1300 includes an imaging device 1310. The imaging device 1310 is the photoelectric conversion device (imaging device) described in any of the above embodiments. The photoelectric conversion system 1300 includes an image processing unit 1312 that performs image processing on a plurality of pieces of image data acquired by the imaging device 1310, and a parallax acquisition unit 1314 that calculates a parallax (phase difference of a parallax image) from the plurality of pieces of image data acquired by the photoelectric conversion system 1300. Further, the photoelectric conversion system 1300 includes a distance acquisition unit 1316 that calculates a distance to an object based on the calculated parallax, and a collision determination unit 1318 that determines whether there is a possibility of collision based on the calculated distance. Here, the parallax acquisition unit 1314 and the distance acquisition unit 1316 are examples of distance information acquisition means for acquiring distance information to an object. That is, the distance information is information related to parallax, defocus amount, distance to an object, and the like. The collision determination unit 1318 may determine the possibility of collision using any of these distance information. The distance information acquisition means may be realized by dedicatedly designed hardware, or may be realized by a software module. Further, it may be realized by an FPGA (Field Programmable Gate Array), an ASIC (Application Specific Integrated Circuit), or the like, or may be realized by a combination of these.

[0083] The photoelectric conversion system 1300 is connected to the vehicle information acquisition device 1320 and can acquire vehicle information such as vehicle speed, yaw rate, and steering angle. Further, the photoelectric conversion system 1300 is connected to a control ECU 1330, which is a control device that outputs a control signal for generating a braking force for the vehicle based on the determination result of the collision determination unit 1318. Further, the photoelectric conversion system 1300 is also connected to an alarm device 1340 that issues an alarm to the driver based on the determination result of the collision determination unit 318. For example, when the collision determination unit 1318 determines that there is a high possibility of collision, the control ECU 1330 performs vehicle control to avoid the collision and reduce the damage, such as applying the brakes, returning the accelerator, and suppressing the engine output. The alarm device 1340 warns the user by sounding an alarm such as a sound, displaying alarm information on the screen of a car navigation system, or applying vibration to the seat belt or steering wheel.

[0084] In this embodiment, the photoelectric conversion system 1300 images the surroundings of the vehicle, for example, the front or the rear. FIG. 13(b) shows the photoelectric conversion system when imaging the front of the vehicle (imaging range 1350). The vehicle information acquisition device 1320 sends an instruction to the photoelectric conversion system 1300 or the imaging device 1310. With such a configuration, the ranging accuracy can be further improved.

[0085] In the above, an example of controlling so as not to collide with other vehicles has been described, but it is also applicable to control for automatically driving while following other vehicles and control for automatically driving so as not to deviate from the lane. Further, the photoelectric conversion system is not limited to vehicles such as the host vehicle, and can be applied to moving bodies (moving devices) such as ships, aircraft, or industrial robots. This moving body mainly includes a driving force generation unit that generates a driving force used for the movement of the moving body, and one or both of rotating bodies mainly used for the movement of the moving body. The driving force generation unit can be an engine, a motor, or the like. The rotating body can be a tire, a wheel, a screw of a ship, a propeller of an aircraft, or the like. In addition, it can be applied not only to moving bodies but also to devices that widely use object recognition, such as an advanced road traffic system (ITS).

[0086] (Eighth Embodiment) The photoelectric conversion system of this embodiment will be described with reference to FIG. 14. FIG. 14 is a block diagram showing a configuration example of a distance image sensor which is the photoelectric conversion system of this embodiment.

[0087] As shown in FIG. 14, the distance image sensor 401 includes an optical system 407, a photoelectric conversion device 408, an image processing circuit 404, a monitor 405, and a memory 406. Then, the distance image sensor 401 can obtain a distance image corresponding to the distance to the subject by projecting light from the light source device 409 toward the subject and receiving the light (modulated light or pulsed light) reflected by the surface of the subject.

[0088] The optical system 407 is configured to have one or more lenses, guide image light (incident light) from the subject to the photoelectric conversion device 408, and form an image on the light receiving surface (sensor unit) of the photoelectric conversion device 408.

[0089] As the photoelectric conversion device 408, the photoelectric conversion devices of the above-described embodiments are applied, and a distance signal indicating the distance obtained from the light reception signal output from the photoelectric conversion device 408 is supplied to the image processing circuit 404.

[0090] The image processing circuit 404 performs image processing for constructing a distance image based on the distance signal supplied from the photoelectric conversion device 408. Then, the distance image (image data) obtained by the image processing is supplied to the monitor 405 for display or supplied to the memory 406 for storage (recording).

[0091] In the distance image sensor 401 configured as described above, by applying the above-described photoelectric conversion device, for example, a more accurate distance image can be obtained as the characteristics of the pixels are improved.

[0092] (Ninth Embodiment) The photoelectric conversion system of this embodiment will be described with reference to FIG. 15. FIG. 15 is a diagram showing an example of a schematic configuration of an endoscope surgery system which is the photoelectric conversion system of this embodiment.

[0093] In FIG. 15, a state where an operator (doctor) 1131 is performing a surgery on a patient 1132 on a patient bed 1133 using an endoscopic surgery system 1150 is illustrated. As shown, the endoscopic surgery system 1150 includes an endoscope 1100, a surgical instrument 1110, and a cart 1134 equipped with various devices for endoscopic surgery.

[0094] The endoscope 1100 includes a lens barrel 1101 whose tip region of a predetermined length is inserted into the body cavity of the patient 1132, and a camera head 1102 connected to the proximal end of the lens barrel 1101. In the illustrated example, the endoscope 1100 configured as a so-called rigid endoscope having a rigid lens barrel 1101 is shown, but the endoscope 1100 may be configured as a so-called flexible endoscope having a flexible lens barrel.

[0095] An opening in which an objective lens is fitted is provided at the tip of the lens barrel 1101. A light source device 1203 is connected to the endoscope 1100, and the light generated by the light source device 1203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 1101 and irradiated toward an observation target in the body cavity of the patient 1132 through the objective lens. Note that the endoscope 1100 may be a direct vision endoscope, a forward oblique endoscope, or a side vision endoscope.

[0096] An optical system and a photoelectric conversion device are provided inside the camera head 1102, and the reflected light (observation light) from the observation target is condensed by the optical system onto the photoelectric conversion device. The observation light is photoelectrically converted by the photoelectric conversion device, and an electrical signal corresponding to the observation light, that is, an image signal corresponding to the observation image, is generated. As the photoelectric conversion device, the photoelectric conversion device (imaging device) described in each of the above embodiments can be used. The image signal is transmitted as RAW data to a camera control unit (CCU) 1135.

[0097] The CCU 1135 is composed of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and comprehensively controls the operations of the endoscope 1100 and the display device 1136. Further, the CCU 1135 receives an image signal from the camera head 1102, and performs various image processes for displaying an image based on the image signal, such as development processing (demosaicing processing), on the image signal.

[0098] The display device 1136 displays an image based on the image signal that has been subjected to image processing by the CCU 1135 under the control of the CCU 1135.

[0099] The light source device 1203 is composed of a light source such as an LED (Light Emitting Diode), and supplies irradiation light for photographing the surgical site, etc. to the endoscope 1100.

[0100] The input device 1137 is an input interface for the endoscope surgical system 1150. The user can input various information and instruction inputs to the endoscope surgical system 1150 via the input device 1137.

[0101] The treatment instrument control device 1138 controls the driving of the energy treatment instrument 1112 for tissue cauterization, incision, or blood vessel sealing, etc.

[0102] The light source device 1203 that supplies irradiation light for photographing the surgical site with the endoscope 1100 can be configured from, for example, an LED, a laser light source, or a white light source composed of a combination thereof. When a white light source is configured by a combination of RGB laser light sources, since the output intensity and output timing of each color (each wavelength) can be controlled with high precision, the white balance of the captured image can be adjusted in the light source device 1203. Further, in this case, the laser light from each of the RGB laser light sources is irradiated to the observation target in a time-division manner, and by controlling the driving of the imaging element of the camera head 1102 in synchronization with the irradiation timing, it is also possible to capture images corresponding to each of RGB in a time-division manner. According to this method, a color image can be obtained without providing a color filter for the imaging element.

[0103] Further, the driving of the light source device 1203 may be controlled so as to change the intensity of the output light at predetermined time intervals. By controlling the driving of the imaging element of the camera head 1102 in synchronization with the timing of the change in the intensity of the light and acquiring images in a time-division manner and synthesizing the images, it is possible to generate a high-dynamic range image without so-called black crushing and white blooming.

[0104] Further, the light source device 1203 may be configured to be able to supply light in a predetermined wavelength band corresponding to special light observation. In special light observation, for example, the wavelength dependence of light absorption in body tissue is utilized. Specifically, by irradiating light in a narrower band than the irradiation light (i.e., white light) during normal observation, a predetermined tissue such as blood vessels in the mucosal surface layer can be photographed with high contrast. Alternatively, in special light observation, fluorescence observation may be performed to obtain an image by fluorescence generated by irradiating excitation light. In fluorescence observation, it is possible to irradiate the body tissue with excitation light and observe the fluorescence from the body tissue, or to locally inject a reagent such as indocyanine green (ICG) into the body tissue and irradiate the body tissue with excitation light corresponding to the fluorescence wavelength of the reagent to obtain a fluorescence image. The light source device 1203 can be configured to be able to supply such narrow-band light and / or excitation light corresponding to special light observation.

[0105] (Embodiment 10) The photoelectric conversion system of this embodiment will be described with reference to FIGS. 16(a) and 16(b). FIG. 16(a) illustrates glasses 1600 (smart glasses), which are the photoelectric conversion system of this embodiment. The glasses 1600 have a photoelectric conversion device 1602. The photoelectric conversion device 1602 is the photoelectric conversion device (imaging device) described in each of the above embodiments. Also, a display device including a light-emitting device such as an OLED or an LED may be provided on the back side of the lens 1601. The number of photoelectric conversion devices 1602 may be one or more. Also, a combination of multiple types of photoelectric conversion devices may be used. The arrangement position of the photoelectric conversion device 1602 is not limited to FIG. 16(a).

[0106] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power supply that supplies power to the photoelectric conversion device 1602 and the above display device. Also, the control device 1603 controls the operations of the photoelectric conversion device 1602 and the display device. An optical system for condensing light onto the photoelectric conversion device 1602 is formed in the lens 1601.

[0107] FIG. 16(b) illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 have a control device 1612, and a photoelectric conversion device corresponding to the photoelectric conversion device 1602 and a display device are mounted on the control device 1612. An optical system for projecting the light emitted from the photoelectric conversion device and the display device within the control device 1612 is formed in the lens 1611, and an image is projected onto the lens 1611. The control device 1612 functions as a power supply that supplies power to the photoelectric conversion device and the display device, and controls the operations of the photoelectric conversion device and the display device. The control device may have a gaze detection unit that detects the wearer's gaze. Infrared rays may be used for gaze detection. The infrared light emitting unit emits infrared light to the eyeball of the user who is gazing at the display image. An imaging image of the eyeball can be obtained by detecting the reflected light of the emitted infrared light from the eyeball by an imaging unit having a light receiving element. By having a reduction means for reducing the light from the infrared light emitting unit to the display unit in a plan view, a reduction in image quality is reduced.

[0108] The user's line of sight with respect to the display image is detected from the captured image of the eyeball obtained by infrared imaging. Any known method can be applied to the line-of-sight detection using the captured image of the eyeball. As an example, a line-of-sight detection method based on the Purkinje image by the reflection of the irradiation light on the cornea can be used.

[0109] More specifically, a line-of-sight detection process based on the pupillary corneal reflex method is performed. Using the pupillary corneal reflex method, a line-of-sight vector representing the orientation (rotation angle) of the eyeball is calculated based on the image of the pupil and the Purkinje image included in the captured image of the eyeball, thereby detecting the user's line of sight.

[0110] The display device of the present embodiment may include a photoelectric conversion device having a light receiving element, and control the display image of the display device based on the user's line-of-sight information from the photoelectric conversion device.

[0111] Specifically, the display device determines, based on the line-of-sight information, a first visual field region that the user is gazing at and a second visual field region other than the first visual field region. The first visual field region and the second visual field region may be determined by the control device of the display device, or the display device may receive those determined by an external control device. In the display area of the display device, the display resolution of the first visual field region may be controlled to be higher than that of the second visual field region. That is, the resolution of the second visual field region may be made lower than that of the first visual field region.

[0112] Also, the display area has a first display area and a second display area different from the first display area, and based on the line-of-sight information, a region with a higher priority may be determined from the first display area and the second display area. The first visual field region and the second visual field region may be determined by the control device of the display device, or the display device may receive those determined by an external control device. The resolution of the region with a higher priority may be controlled to be higher than that of the region other than the region with a higher priority. That is, the resolution of the region with a relatively lower priority may be made lower.

[0113] Note that AI may be used to determine the first visual field area or the area with high priority. The AI may be a model configured to estimate the angle of the line of sight and the distance to the object at the tip of the line of sight from the eye image, using the eye image and the direction in which the eye in the image is actually looking as teacher data. The AI program may be provided in the display device, the photoelectric conversion device, or an external device. When provided in an external device, it is transmitted to the display device via communication.

[0114] When performing display control based on visual recognition detection, it is preferably applicable to smart glasses further having a photoelectric conversion device for imaging the outside. The smart glasses can display the captured external information in real time.

[0115] (Embodiment 11) FIG. 17 is a block diagram of the X-ray CT apparatus according to this embodiment. As described above, the semiconductor device in the first to fifth embodiments is applicable to the detector of the X-ray CT apparatus. The X-ray CT apparatus 30 in this embodiment includes an X-ray generation unit 310, a wedge 311, a collimator 312, an X-ray detection unit 320, a top plate 330, a rotating frame 340, and a high voltage generation device 350. Further, it includes a data acquisition device (DAS: Data Acquisition System) 351, a signal processing unit 352, a display unit 353, and a control unit 354.

[0116] The X-ray generation unit 310 is composed of, for example, a vacuum tube that generates X-rays. The vacuum tube of the X-ray generation unit 310 is supplied with a high voltage and a filament current from the high voltage generation device 350. X-rays are generated by irradiating thermoelectrons from the cathode (filament) toward the anode (target).

[0117] The wedge 311 is a filter that adjusts the X-ray dose irradiated from the X-ray generating unit 310. The wedge 311 attenuates the X-ray dose so that the X-rays irradiated from the X-ray generating unit 310 to the subject have a predetermined distribution. The collimator 312 is composed of a lead plate or the like that narrows the irradiation range of the X-rays transmitted through the wedge 311. The X-rays generated by the X-ray generating unit 310 are shaped into a cone beam through the collimator 312 and irradiated onto the subject on the top plate 330.

[0118] The X-ray detection unit 320 is configured using the semiconductor device in the above-described second and third embodiments. The X-ray detection unit 320 detects the X-rays that have passed through the subject from the X-ray generating unit 310 and outputs a signal corresponding to the X-ray dose to the DAS 351.

[0119] The rotating frame 340 is annular and configured to be rotatable. Inside the rotating frame 340, the X-ray generating unit 310 (wedge 311, collimator 312) and the X-ray detection unit 320 are arranged to face each other. The X-ray generating unit 310 and the X-ray detection unit 320 can rotate together with the rotating frame 340.

[0120] The high voltage generator 350 includes a booster circuit and outputs a high voltage to the X-ray generating unit 310. The DAS 351 includes an amplifier circuit and an A / D conversion circuit, and outputs the signal from the X-ray detection unit 320 to the signal processing unit 352 as digital data.

[0121] The signal processing unit 352 includes a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory), and is capable of performing image processing and the like on the digital data. The display unit 353 includes a flat panel display device or the like and can display an X-ray image. The control unit 354 includes a CPU, a ROM, a RAM, etc., and controls the operation of the entire X-ray CT apparatus 30.

[0122] The above-described embodiments can be appropriately modified without departing from the technical idea. Note that the disclosure of this specification includes not only what is described in this specification but also all matters that can be grasped from this specification and the drawings attached hereto. Further, the disclosure of this specification includes the complementary set of the concepts described in this specification. That is, for example, if this specification describes that "A is larger than B", even if the description that "A is not larger than B" is omitted, it can be said that this specification discloses that "A is not larger than B". This is because when the description that "A is larger than B" is given, it is premised that the case where "A is not larger than B" is considered.

[0123] Further, the present disclosure includes the following configurations.

[0124] (Configuration 1) A photoelectric conversion device having a plurality of pixels arranged in an array, each of the plurality of pixels having a plurality of photoelectric conversion portions that share a microlens, the plurality of photoelectric conversion portions of the first pixel among the plurality of pixels being separated in a first direction, the plurality of photoelectric conversion portions of the second pixel among the plurality of pixels being separated in a second direction different from the first direction, a floating diffusion region being arranged in one of the columns or rows between the photoelectric conversion portions included in the plurality of pixels, and a well contact being arranged in the other of the columns or rows between the photoelectric conversion portions included in the plurality of pixels.

[0125] (Configuration 2) The photoelectric conversion device according to Configuration 1, wherein the well contact is arranged between two transistors of the same type.

[0126] (Configuration 3) The first pixel has a first selection transistor, the second pixel has a second selection transistor, and the well contact is arranged between the first selection transistor and the second selection transistor. The photoelectric conversion device according to Configuration 1 or 2, characterized by this.

[0127] (Configuration 4) The photoelectric conversion device according to any one of Configurations 1 to 3, wherein when two line segments extending in the first direction are arranged so that the area of the first pixel is divided into three equal parts, the well contact is arranged in the region sandwiched between the two line segments.

[0128] (Configuration 5) The photoelectric conversion device according to any one of Configurations 1 to 4, wherein in plan view, the center of the well contact is arranged in a region within ±1 μm in the direction orthogonal to the extension line from the extension line extending in the longitudinal direction of the separation part.

[0129] (Configuration 6) The photoelectric conversion device according to any one of Configurations 1 to 5, wherein when a line segment extending in the longitudinal direction of the separation part passing through the center of the separation part is assumed in plan view, the line segment passes through the well contact.

[0130] (Configuration 7) The photoelectric conversion device according to any one of Configurations 1 to 6, wherein the first direction and the second direction are orthogonal to each other.

[0131] (Configuration 8) The photoelectric conversion device according to any one of Configurations 1 to 7, wherein the first direction is the column direction of the array in which the plurality of pixels are arranged, and the second direction is the row direction of the array in which the plurality of pixels are arranged.

[0132] (Configuration 9) It has a separation part that separates the plurality of photoelectric conversion parts of the first pixel in the first direction, and a separation part that separates the plurality of photoelectric conversion parts of the second pixel in the second direction. In each of the first pixel and the second pixel, the plurality of photoelectric conversion parts and the first separation part have different impurity conduction types. The photoelectric conversion device according to any one of Claim Configurations 1 to 8.

[0133] (Configuration 10) A separating portion that separates a plurality of photoelectric conversion portions of the first pixel from each other in the first direction, and a separating portion that separates a plurality of photoelectric conversion portions of the second pixel from each other in the second direction. In each of the first pixel and the second pixel, the first separating portion includes a trench structure. The photoelectric conversion device according to any one of Configurations 1 to 8.

[0134] (Configuration 11) A separation structure is disposed between the region where the well contact is disposed and the photoelectric conversion portion of the first pixel. The photoelectric conversion device according to any one of Configurations 1 to 10.

[0135] (Configuration 12) The region where the well contact is disposed and the photoelectric conversion portion of the first pixel are a continuous semiconductor region. The photoelectric conversion device according to any one of Configurations 1 to 10.

[0136] (Configuration 13) The well contact is disposed in a region shallower than the photoelectric conversion portion. The photoelectric conversion device according to any one of Configurations 1 to 12.

[0137] (Configuration 14) A photoelectric conversion system including the photoelectric conversion device according to any one of Configurations 1 to 13, and a signal processing portion that generates an image using a signal output from the photoelectric conversion device.

[0138] (Configuration 15) A moving body including the photoelectric conversion device according to any one of Configurations 1 to 13, and having a control portion that controls the movement of the moving body using a signal output from the photoelectric conversion device.

Explanation of Reference Numerals

[0139] 102 Pixel 103 Photoelectric conversion element 104 Microlens 106 Floating diffusion region 301 Well Contact

Claims

1. having a plurality of pixels arranged in an array, each of the plurality of pixels having a plurality of photoelectric conversion units that share a microlens, the plurality of photoelectric conversion units of the first pixel among the plurality of pixels being separated from each other in a first direction, the plurality of photoelectric conversion units of the second pixel among the plurality of pixels being separated from each other in a second direction different from the first direction, a floating diffusion region being arranged between columns or rows of the photoelectric conversion units included in the plurality of pixels, a well contact being arranged between columns or rows of the photoelectric conversion units included in the plurality of pixels, characterized in that the photoelectric conversion device is a photoelectric conversion device.

2. The photoelectric conversion device according to claim 1, wherein the well contact is arranged between two transistors of the same type.

3. The first pixel has a first selection transistor, The second pixel has a second selection transistor, The photoelectric conversion device according to claim 2, wherein the well contact is arranged between the first selection transistor and the second selection transistor.

4. When two line segments extending in the first direction are arranged so that the area of the first pixel is divided into three equal parts, The photoelectric conversion device according to claim 1, wherein the well contact is arranged in a region sandwiched between the two line segments.

5. In a plan view, the center of the well contact is arranged in a region within ±1 μm in a direction orthogonal to an extension line from the extension line extending in the longitudinal direction of the separation part to the separation part. The photoelectric conversion device according to claim 1.

6. In a plan view, when a line segment extending in the longitudinal direction of the separation part passing through the center of the separation part is assumed, the line segment passes through the well contact. The photoelectric conversion device according to claim 1.

7. The photoelectric conversion device according to claim 1, wherein the first direction and the second direction are orthogonal to each other.

8. The first direction is the column direction of the array in which the plurality of pixels are arranged, The photoelectric conversion device according to claim 1, wherein the second direction is the row direction of the array in which the plurality of pixels are arranged.

9. having a separation part that separates the plurality of photoelectric conversion units of the first pixel from each other in the first direction, and a separation part that separates the plurality of photoelectric conversion units of the second pixel from each other in the second direction, The photoelectric conversion device according to claim 1, wherein in each of the first pixel and the second pixel, the plurality of photoelectric conversion units and the separation unit have different impurity conductivity types.

10. The photoelectric conversion device according to claim 1, further comprising: a separation unit that separates the plurality of photoelectric conversion units of the first pixel in the first direction; and a separation unit that separates the plurality of photoelectric conversion units of the second pixel in the second direction. The photoelectric conversion device according to claim 1, wherein in each of the first pixel and the second pixel, the separation unit includes a trench structure.

11. The photoelectric conversion device according to claim 1, wherein the separation unit is disposed between the region where the well contact is disposed and the photoelectric conversion unit of the first pixel.

12. The photoelectric conversion device according to claim 1, wherein the region where the well contact is disposed and the photoelectric conversion unit of the first pixel are a continuous semiconductor region.

13. The photoelectric conversion device according to claim 1, wherein the well contact is disposed in a region shallower than the photoelectric conversion unit.

14. A photoelectric conversion system, comprising: the photoelectric conversion device according to any one of claims 1 to 13; and a signal processing unit that generates an image using a signal output from the photoelectric conversion device.

15. A moving body including the photoelectric conversion device according to any one of claims 1 to 13, further comprising: a control unit that controls the movement of the moving body using a signal output from the photoelectric conversion device. ​ ​

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