Solid-state imaging element package and method for manufacturing the same
The solid-state imaging device package addresses the issue of adhesive washaway and substrate tilting by using a hardened material layer and columnar structures to maintain structural integrity and enhance image quality.
Patent Information
- Application Number
- JP2024037751
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-11-27
- Filing Date
- 2024-03-12
- Publication Date
- 2025-06-06
AI Technical Summary
In the manufacturing process of solid-state imaging element packages, the weight of the glass substrate can cause the liquid adhesive to be crushed, leading to issues such as substrate tilting and adhesive washaway near the light-receiving element.
A solid-state imaging device package configuration featuring a transparent first substrate, a second substrate with a solid-state imaging element, and a hardened material layer surrounding the element, with columnar structures embedded in the cured material layer to maintain structural integrity and distance between substrates.
This configuration enhances structural accuracy and prevents adhesive washaway, ensuring reliable bonding and improved image quality by maintaining the structural integrity and preventing tilting of the glass substrate.
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Figure 2025086307000001_ABST
Abstract
Description
[Technical field]
[0001] The present invention relates to a solid-state imaging device package and a method for manufacturing the solid-state imaging device package. [Background technology]
[0002] Solid-state imaging devices (solid-state imaging element packages) such as CMOS image sensors and CCD image sensors are used in digital cameras, smartphones, etc. In recent years, their use has increased due to their widespread use in surveillance cameras in automobiles and factories, and there is an increasing demand for them to be more compact and have higher definition.
[0003] A solid-state imaging device package is a package with a hollow space in which a semiconductor substrate having a light receiving element and a glass substrate are bonded together with a rib material that surrounds the light receiving element of the semiconductor substrate. Conventionally, solid-state imaging device packages are manufactured by forming a rib material by applying a liquid adhesive such as epoxy resin or acrylic resin onto a semiconductor substrate, placing glass that serves as a sealing substrate, and then heating to harden the adhesive layer. (Patent Document 1) [Prior art documents] [Patent documents]
[0004] [Patent Document 1] JP 2004-296453 A Summary of the Invention [Problem to be solved by the invention]
[0005] In the manufacturing process of a solid-state imaging element package, when a glass substrate is laminated to a semiconductor substrate via a liquid adhesive, the weight of the glass substrate itself can cause the liquid adhesive to be crushed, resulting in problems such as the glass substrate tilting or the liquid adhesive being washed away to the vicinity of the light-receiving element.
[0006] SUMMARY OF THE PRESENT DISCLOSURE An object of the present invention is to provide a solid-state imaging device package with improved structural accuracy and a method for manufacturing the same. [Means for solving the problem]
[0007] As a result of intensive research, it has been found that the above problems can be solved by the following configuration.
[0008] (1) a transparent first substrate; a second substrate having a solid-state imaging element; A hardened layer is interposed between the first substrate and the second substrate and disposed so as to surround the solid-state imaging element; A plurality of columnar structures embedded in the cured material layer and defining a distance between the first substrate and the second substrate; A solid-state imaging element package comprising:
[0009] (2) The cured layer is formed into a rectangular frame shape, The solid-state imaging element package according to (1), wherein the columnar structures are disposed at corner portions of the cured material layer.
[0010] (3) The solid-state imaging element package according to (2), wherein a plurality of the columnar structures are arranged at each of the corners.
[0011] (4) The solid-state imaging device package according to any one of (1) to (3), wherein the cured layer contains a colorant.
[0012] (5) A solid-state imaging device having a plurality of solid-state imaging device packages according to any one of (1) to (3), A solid-state imaging element package assembly, in which the first substrate and the second substrate are formed as an integrated aggregate first substrate and an integrated aggregate second substrate, respectively, via a dicing space.
[0013] (6) A method for manufacturing a solid-state imaging element package, comprising: a transparent first substrate; a second substrate having a solid-state imaging element; and a cured material layer disposed between the first substrate and the second substrate and surrounding the solid-state imaging element, the method comprising the steps of: forming a plurality of columnar structures on the first substrate, the columnar structures being embedded in the cured material layer and defining a distance between the first substrate and the second substrate; applying an adhesive to the second substrate to form the cured layer; bonding the first substrate and the second substrate with the adhesive so that the columnar structures are inserted into the adhesive; A method for manufacturing a solid-state imaging device package comprising:
[0014] (7) The first substrate and the second substrate are provided as a first substrate aggregate and a second substrate aggregate, respectively, in which a plurality of substrates are arranged with a dicing space therebetween; the step of forming the columnar structures, the step of applying the adhesive, and the step of bonding the first substrate and the second substrate are performed using the aggregate first substrate and the aggregate second substrate; The method for manufacturing a solid-state imaging element package according to (6), further comprising the step of dividing the solid-state imaging element package into individual pieces by dicing after the step of bonding the first substrate and the second substrate.
[0015] (8) The method for manufacturing a solid-state imaging device package according to (6) or (7), wherein the columnar structures are formed from a negative photosensitive resin. Effect of the Invention
[0016] According to the present invention, it is possible to provide a solid-state image sensor device with improved structural accuracy and a manufacturing method thereof. [Brief description of the drawings]
[0017] [Figure 1] 1 is a (perspective) view of an example of a solid-state imaging element package according to the present invention, as viewed from a first substrate side. [Diagram 2] 2 is a cross-sectional view of the solid-state imaging element package taken along line aa in FIG. 1. [Diagram 3] 1 is a (perspective) view of an example of a solid-state imaging element package according to the present invention, as viewed from a first substrate side. [Figure 4]1 is a (perspective) view of an example of a solid-state imaging element package according to the present invention, as viewed from a first substrate side. [Diagram 5] 1 is a diagram showing an example of a first substrate (transparent substrate) showing an arrangement of structures 50. FIG. [Figure 6] 1 is a diagram showing an example of a first substrate (transparent substrate) showing an arrangement of structures 50. FIG. [Figure 7] 1 is a diagram showing an example of a first substrate (transparent substrate) showing an arrangement of structures 50. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0018] The present invention will be described below.
[0019] The present invention is a solid-state imaging element package (solid-state imaging device) comprising a transparent first substrate, a second substrate having an imaging element, a hardened material layer interposed between the first substrate and the second substrate and arranged to surround the imaging element, and a plurality of columnar structures embedded in the hardened material layer and defining the distance between the first substrate and the second substrate.
[0020] An embodiment of the present invention will be described with reference to the drawings. Fig. 1 is an example of a (perspective) view of a solid-state imaging device (solid-state imaging element package) according to an embodiment of the present invention as viewed from the first substrate side. Fig. 2 is a cross-sectional view of the solid-state imaging element package of Fig. 1 taken along line aa.
[0021] The solid-state imaging element package 1 has a first substrate 10 which is a transparent substrate, a second substrate 20 on which a solid-state imaging element 30 is mounted, and a hardened material layer 40 interposed between the first substrate 10 and the second substrate 20, and the hardened material layer 40 is patterned into a rectangular frame shape, and inside the frame patterned into a rectangular frame shape there is a hollow space between the first substrate 10 and the second substrate 20.
[0022] The second substrate 20 is a structural member that supports the solid-state imaging element 30. For this reason, the second substrate 20 is formed from a material having sufficient rigidity. The second substrate 20 may be a simple support that does not have any components that are electrically incorporated into a circuit, but is preferably a circuit board on which a circuit is formed that supplies power to the solid-state imaging element 30 and extracts a signal from the solid-state imaging element 30. In this embodiment, the second substrate 20 may be a circuit board on which a circuit including a terminal for electrically connecting to the solid-state imaging element 30 is formed.
[0023] Examples of the second substrate 20 include organic materials such as polyimide, polyester, ceramic, epoxy, bismaleimide triazine resin, and phenol resin, structures in which paper or nonwoven glass fiber is impregnated with the organic materials and then heated and cured, ceramics such as alumina, aluminum nitride, beryllium oxide, and silicon nitride, and metal substrates. Among these, preferred are glass epoxy substrates, ceramic substrates, and bismaleimide triazine resin substrates. Circuits having metal wiring patterns and metal bumps can be formed on the surface or inside of these insulating substrates.
[0024] The cured material layer 40 is disposed so as to surround the solid-state imaging element 30 with a margin (leaving a space between the solid-state imaging element 30 in a plan view). The cured material layer 40 functions as an adhesive layer that bonds the first substrate 10 and the second substrate 20. The cured material layer 40, together with the first substrate 10, forms an enclosed space above the solid-state imaging element 30.
[0025] The cured layer 40 may be formed from, for example, an epoxy adhesive, an acrylic adhesive, a urethane adhesive, or the like. The cured layer 40 may also contain a colorant to absorb light and suppress reflection. Examples of the colorant contained in the cured layer 40 include organic pigments, inorganic pigments, dyes, and the like. From the viewpoint of heat resistance and colorability, it is preferable to use a pigment as the colorant. The colorant may be any color, such as red, yellow, or blue, but is preferably black from the viewpoint of suppressing reflection. When forming a black cured layer 40, it is preferable to use a black pigment as the colorant.
[0026] As black pigments that absorb a wide range of wavelengths in the visible light region, black organic pigments and black inorganic pigments are considered. Examples of black organic pigments include anthraquinone-based black pigments, perylene-based black pigments, azo-based black pigments, and lactam-based black pigments. Among these, perylene-based black pigments and lactam-based black pigments are preferred because of their excellent light-shielding properties. Examples of black inorganic pigments include carbon black and black low-order titanium oxynitride. Examples of inorganic pigments other than black include composite metal oxide pigments, titanium oxide, barium sulfate, lead sulfate, yellow lead, red ocher, ultramarine, Prussian blue, chromium oxide, antimony white, zinc sulfide, zinc, manganese purple, cobalt purple, and magnesium carbonate. Specific examples of chromatic pigments include Color Index (CI) Pigment Yellow 1, 10, and 83, etc.; CI Pigment Orange 2, 5, and 13, etc.; CI Pigment Red 1, 2, and 3, etc.; CI Pigment Green 7, 10, and 36, etc.; and CI Pigment Blue 1, 2, and 15, etc. These pigments can be used alone or in various combinations. Examples of dyes include azo compounds, anthraquinone compounds, perylene compounds, perinone compounds, phthalocyanine compounds, carbonium compounds, indigoid compounds, etc. Examples of pigments used to obtain colored patterns other than black patterns include chromatic pigments such as red, orange, yellow, green, blue, purple, cyanine, and magenta.
[0027] The content of the colorant in the cured material layer 40 is preferably 0.2% by mass or more and 20% by mass or less, more preferably 0.5% by mass or more and 15% by mass or less, and even more preferably 0.8% by mass or more and 10% by mass or less. By setting the content of the colorant to the lower limit or more, flare due to light reflection can be effectively suppressed. By setting the content of the colorant to the upper limit or less, curing of the cured material layer 40 can be prevented from being hindered.
[0028] The first substrate 10, which is a transparent substrate, allows light to enter the solid-state imaging element 30. The first substrate 10 can be made of transparent ceramics such as glass or sapphire, or transparent plastics such as acrylic resin or polycarbonate, with transparent ceramics being preferred from the viewpoint of reliability. From the viewpoint of versatility, it is preferred to use glass. The type of glass is not particularly limited, but examples include quartz glass, borosilicate glass, and non-alkali glass.
[0029] The columnar structures 50 are embedded in the cured layer 40, and the columnar structures 50 determine the distance between the first substrate 10 and the second substrate 20, and in a cross section perpendicular to the imaging surface of the solid-state imaging element 30, the order is first substrate 10 / columnar structures 50 / second substrate 20.
[0030] In order to define the distance between the first substrate 10 and the second substrate 20, the compressive strength of the columnar structure 50 at 60° C. is preferably 0.1 N / cm 2 More preferably, it is 0.1 N / cm 2 More preferably, 0.5N / cm 2 That's all.
[0031] In order to stably perform the process of inserting the columnar structures 50 into the resin layer forming the cured material layer 40 disposed on the second substrate 20 and bonding the first substrate 10 and the second substrate 20 via the columnar structures 50, the area of the surface of the columnar structures 50 in contact with the second substrate 20 must be 25 μm or less. 2 ~1mm 2 It is preferable that the thickness is 50 μm. 2 ~0.75mm 2It is preferable that the thickness is 100 μm. 2 ~0.5mm 2 By setting the area of the surface of the columnar structures 50 in contact with the second substrate 20 to be equal to or greater than the above lower limit, sufficient strength for supporting the first substrate 10 can be obtained, and by setting the area of the surface of the columnar structures 50 in contact with the second substrate 20 to be equal to or less than the above upper limit, degradation of image quality caused by the cured material layer 40 approaching the solid-state imaging element 30 can be suppressed.
[0032] Furthermore, in order to make the first substrate 10 and the second substrate 20 parallel to each other, three or more columnar structures 50 may be arranged per first substrate 10, but preferably, a columnar structure 50 is arranged at each of the four corners of the cured material layer 40, that is, four or more columnar structures 50, as shown in FIG. 3.
[0033] The columnar structures 50 are preferably arranged within 1 mm from the outer periphery of the first substrate 10, preferably in a range of 1 μm to 1 mm from the outer periphery of the first substrate 10, and more preferably in a range of 10 μm to 0.5 mm from the outer periphery of the first substrate 10.
[0034] The columnar structures 50 are preferably arranged within a 1 mm square range at the corners of the first substrate 10, because this makes it easier to stably determine the distance between the first substrate 10 and the second substrate 20. In order to allow the columnar structures 50 to be inserted into the resin material layer forming the cured material layer 40 without damaging the shape of the resin material layer, it is more preferable to arrange a plurality of columnar structures 50 having a small cross-sectional area at each of the four corners of the cured material layer 40, as shown in Fig. 4, and it is particularly preferable to arrange four or more columnar structures 50 at each of the four corners.
[0035] When the columnar structures 50 are inserted into the resin material layer forming the cured material layer 40, the resin material layer forming the cured material layer 40 is pushed out by the amount of insertion, and the frame-shaped wall of the cured material layer 40 is pushed out. The light reflected by the rectangular frame patterned by the amount of pushing out may enter the solid-state imaging element 30, causing inconvenience. Therefore, if the columnar structures 50 are present only within 30% of the length of one side from the closer corner of the patterned cured material layer 40, the possibility of the above-mentioned inconvenience occurring can be reduced, and it is preferably within 20%, more preferably within 15%, and even more preferably within 5%.
[0036] The shape of the columnar structures 50 is not particularly limited, but is preferably a shape selected from a prismatic shape, a cylindrical shape, a pyramidal shape, and a conical shape.
[0037] The columnar structures 50 are preferably a cured product of a negative or positive photosensitive resin, since this makes it possible to easily set the shape of the columnar structures 50. Among these, a negative photosensitive resin is preferred from the viewpoints of strength, adhesion, chemical resistance, film thickness range, etc., and among negative photosensitive resins, an acrylic photosensitive resin, an epoxy photosensitive resin, a siloxane photosensitive resin, etc. are preferred.
[0038] Next, a method for manufacturing the solid-state image pickup device package will be described. The solid-state imaging element package manufacturing method of the present invention is a method for manufacturing a solid-state imaging element package comprising a transparent first substrate, a second substrate having a solid-state imaging element, and a hardened material layer interposed between the first substrate and the second substrate and arranged to surround the solid-state imaging element, and comprises the steps of: (1) forming a plurality of columnar structures on the first substrate which are embedded in the hardened material layer and define the distance between the first substrate and the second substrate; (2) applying an adhesive to the second substrate which forms the hardened material layer; and (3) joining the first substrate and the second substrate with the adhesive so as to insert the columnar structures into the adhesive.
[0039] The first substrate and the second substrate are provided as a first substrate and a second substrate, respectively, in which a plurality of the substrates are arranged with dicing spaces interposed therebetween, and the step of forming the columnar structures, the step of applying the adhesive, and the step of joining the first substrate and the second substrate are performed using the first substrate and the second substrate, and the method for manufacturing a solid-state imaging device package may further include a step (4) of dividing the solid-state imaging device packages into individual pieces by dicing after the step (3). Note that the solid-state imaging device package assembly obtained by the step (3) and in which a plurality of solid-state imaging device packages are integrated with each other through dicing spaces is itself an embodiment of the solid-state imaging device package assembly according to the present invention.
[0040] <The manufacturing method of the solid-state imaging element package of the present invention includes the step (1) of preparing a first substrate assembly having columnar structures> In the method for manufacturing a solid-state imaging device package of the present invention, a step (1) of preparing a first substrate assembly having columnar structures (hereinafter, step (1)) will be described.
[0041] A photosensitive resin is applied to a first substrate, which is a transparent substrate, and after drying, the resin is pattern-exposed, developed, and cured (post-baked) as necessary to obtain a first substrate having columnar structures.
[0042] By pattern exposure, a columnar structure is formed within 1 mm from the outer periphery of the first substrate formed by dicing, and the area of the surface of the columnar structure in contact with the aggregate second substrate is 25 μm 2 ~1mm 2 Each first substrate has four or more structures having this shape.
[0043] 5 to 7 show diagrams of the first substrate (transparent substrate) illustrating examples of the arrangement of the columnar structures 50 after dicing. Among these, Fig. 5 and Fig. 6 are particularly preferable.
[0044] <Step (2) of applying and drying an adhesive in a rectangular frame shape so as to surround the imaging element of the aggregate second substrate having the imaging element, and forming a hardened layer> The step (2) (hereinafter, step (2)) of applying and drying an adhesive in a rectangular frame shape so as to surround the imaging element of the aggregate second substrate having the imaging element to form a hardened layer will be described.
[0045] Methods for applying adhesive in a rectangular frame shape to surround the imaging element of the collective second substrate having the imaging element include dispensing and screen printing. Among them, dispensing is often used because it is simple and inexpensive. Epoxy adhesive, acrylic adhesive, urethane adhesive, etc. are applied through a nozzle. The width and height of the applied adhesive can be controlled by the inner diameter of the nozzle when applying, the discharge pressure, the application speed, the gap between the substrate and the nozzle, etc.
[0046] <Step (3) of inserting the columnar structures of the first aggregate substrate obtained in step (1) into the cured material layer of the second aggregate substrate in step (2) and bonding the first aggregate substrate and the second aggregate substrate via the columnar structures> We will now explain step (3) (hereinafter step (3)), in which the columnar structures of the first aggregate substrate obtained in step (1) are inserted into the cured material layer of the second aggregate substrate in step (2) and the first aggregate substrate and the second aggregate substrate are joined via the columnar structures.
[0047] A method for bonding the first and second aggregate substrates is to use a flip chip bonder. The second aggregate substrate coated with the adhesive obtained in step (2) is set on a stage, and the surface of the first aggregate substrate on which the columnar structures are not formed is adsorbed and fixed with a collet, and then the substrates are bonded together at an appropriate position. At this time, the load, temperature, etc. are set as desired.
[0048] <Dicing and dividing process (4)> The step (4) of dicing into individual pieces (hereinafter referred to as step (3)) will be described.
[0049] This is a step in which the laminate obtained in step (3) in which the aggregate first substrate and the aggregate second substrate are joined is diced into (individual) solid-state imaging device packages.
[0050] As a method for dividing the wafer into individual pieces, dicing using a diamond cutter is available. By using a rotary blade, the wafer can be divided into individual pieces efficiently.
[0051] <Other manufacturing methods> Although the above describes the process of dicing after bonding the aggregate first substrate and the aggregate second substrate, a similar solid-state imaging element package can also be manufactured by the following processes (Other 1, Other 2).
[0052] (Other 1) A step (1) of preparing a first substrate assembly having columnar structures; A step (2) of applying and drying an adhesive in a rectangular frame shape so as to surround the imaging element of the aggregate second substrate having the imaging element, thereby forming a hardened layer; A step of dicing the assembly substrate of step (1) and step (2), and a step (3) of bonding the diced first substrate and second substrate.
[0053] (Other 2) A step (1) of preparing a first substrate assembly having columnar structures; A step of dicing the aggregate first substrate of step (1) to prepare a first substrate; dicing the imaging elements of the aggregate second substrate having the imaging elements; A step (2') of applying and drying an adhesive in a rectangular frame shape so as to surround the imaging element of the diced aggregate second substrate (second substrate) to form a hardened layer; A step (3') of inserting the columnar structures of the first substrate into the cured material layer of the second substrate and bonding the first substrate and the second substrate together via the columnar structures. EXAMPLES
[0054] The present invention will be specifically described below based on examples, but the present invention is not limited to the following examples.
[0055] <Siloxane-based negative-type photosensitive resin composition> As a material for forming the columnar structures, a photosensitive resin composition was prepared by mixing 100 parts by weight of a main polymer (main polymer) having a cyclic polysiloxane structure in its main chain and having a cationic polymerizable group and an alkali-soluble group, 15 parts by weight of an alicyclic epoxy compound "Celloxide 2021P" manufactured by Daicel Corporation, 3 parts by mass of a photocationic polymerization initiator "CPI-210S" manufactured by San-Apro, and 0.1 parts by weight of an antioxidant "IRGANOX1010" manufactured by BASF.
[0056] The main polymer was prepared by the following procedure. First, 124 mg of platinum vinylsiloxane complex xylene solution "Pt-VTSC-3X" manufactured by Umicore Precious Metals Japan was added to a mixture of 40 g of diallyl isocyanurate, 29 g of diallyl monomethyl isocyanurate, and 264 g of 1,4-dioxane to obtain solution S1. Separately, 88 g of 1,3,5,7-tetrahydrogen-1,3,5,7-tetramethylcyclotetrasiloxane was dissolved in 176 g of toluene to obtain solution S2. Then, in a nitrogen atmosphere containing 3% by volume of oxygen, solution S2 was heated to a temperature of 105°C, and solution S1 was dropped into solution S2 over a period of 3 hours. After the dropwise addition, the mixture was stirred for 30 minutes while maintaining the temperature at 105°C to obtain solution S3. The reaction rate of the alkenyl group of the compound contained in the obtained solution S3 was measured by 1H-NMR, and the reaction rate was 95% or more. Separately, 62 g of 1-vinyl-3,4-epoxycyclohexane was dissolved in 62 g of toluene to obtain solution S4. Then, in a nitrogen atmosphere containing 3% by volume of oxygen, solution S3 was heated to a temperature of 105° C., and solution S4 was dropped into solution S3 over 1 hour. After the dropwise addition, the solution was stirred for 30 minutes while maintaining the temperature at 105° C. to obtain solution S5. The reaction rate of the alkenyl group of the compound contained in the obtained solution S5 was measured by 1H-NMR, and the reaction rate was 95% or more. Next, after cooling solution S5, the solvent (toluene, xylene, and 1,4-dioxane) was distilled off from solution S5 under reduced pressure to obtain a main polymer. The main polymer had a plurality of cationic polymerizable groups and a plurality of alkali-soluble groups in one molecule, and had a cyclic polysiloxane structure in the main chain.
[0057] <Acrylic negative type photosensitive resin composition> As a material for forming the columnar structures, "SU-8" manufactured by Nippon Kayaku Co., Ltd., which is an acrylic negative type photosensitive composition, was used.
[0058] "Manufacturing Examples 1-8" A siloxane-based negative photosensitive resin composition was applied by spin coating onto a glass substrate (10 cm × 10 cm, thickness 0.4 mm) so that the thickness of the coating film after pre-baking would be 100 μm, and the substrate was pre-baked by heating on a hot plate at a temperature of 85°C for 10 minutes and then at a temperature of 120°C for 10 minutes to obtain Sample 1.
[0059] Next, using a manual exposure machine ("MA-1300" manufactured by Dainihon Kaken Co., Ltd., lamp: high-pressure mercury lamp), the film was exposed to a cumulative exposure dose of 3000 mJ / cm through a photomask on which a pattern for obtaining a columnar structure of the prescribed shape shown in Table 1 was formed. 2 The coating film of Sample 1 was exposed to light (specifically, soft contact exposure) by irradiating the coating film with light under the above conditions.
[0060] After the exposure, Sample 1 was left for 1 minute in an atmosphere at 25° C., and then immersed in an aqueous TMAH solution (TMAH concentration: 2.38% by mass) as an alkaline developer for 60 seconds. Sample 1 immersed in the alkaline developer was then washed with water for 30 seconds, and the moisture on the surface was removed with compressed air to obtain Sample 2 having a semi-cured patterned film in which the coating film was patterned into a columnar structure.
[0061] Then, the sample 2 was cut by a dicing device to obtain individual pieces of sample 3 with faces of 12 mm×12 mm.
[0062] "Manufacturing Example 9" Sample 2 was obtained in the same manner as in Production Examples 1 to 7, except that a negative acrylic photosensitive resin composition was used.
[0063] "Examples 1 to 9" The solid-state imaging device packages of Examples 1 to 11 were produced by the following manufacturing process. (Adhesive application process) First, a semiconductor substrate laminate was prepared in which an image sensor substrate provided with a light receiving element and a wiring substrate were bonded via a die bonding agent, and an electrode pad on the semiconductor substrate and an electrode pad on the wiring substrate were electrically connected via a metal wire. Next, an adhesive was applied so as to surround the light receiving element of the semiconductor substrate laminate. In detail, an air pulse dispenser ("ML-808GX" manufactured by Musashi Engineering Co., Ltd.) was combined with a tabletop application robot ("IMAGE MASTER 350PC SMART" manufactured by Musashi Engineering Co., Ltd.) to adjust the application diameter (inner diameter of the coating film) so that the inner periphery-center line distance in the bonding process described later was 90 μm, and the adhesive was applied around the light receiving element. When applying the adhesive, a nozzle with an inner diameter of 100 μm and an outer diameter of 150 μm ("DSHN-M2-0.10F" manufactured by Musashi Engineering Co., Ltd.) was used. In addition, when applying the adhesive, the air pressure of the dispenser was set to 300 kPa, the distance between the nozzle and the semiconductor substrate (hereinafter sometimes referred to as "nozzle distance") was set to 40 μm, and the application speed was set to 8 mm / s.
[0064] (Adhesion process) Next, using a flip chip bonder (Athlete FA's "CB-505"), the transparent substrate with columnar structures obtained by the above-mentioned procedure and the semiconductor substrate laminate with adhesive were laminated. In detail, the semiconductor substrate laminate with adhesive was set on the stage of the flip chip bonder, and the surface of the glass substrate with columnar structures on which the columnar structures were not formed was adsorbed and fixed with a collet, and the collet was moved to a position above the adhesive applied on the semiconductor substrate laminate while checking with a camera attached to the flip chip bonder. At this time, the inner peripheral surface-center line distance was adjusted to 90 μm. Thereafter, the position of the collet was gradually brought closer to the semiconductor substrate laminate, and when the load detection sensor attached to the collet side indicated 1 N, the adsorption of the transparent substrate with columnar structures by the collet was released, and a laminate in which the glass substrate with columnar structures and the semiconductor substrate laminate were laminated via the adhesive was obtained.
[0065] The laminate was then exposed to an integrated light exposure of 3000 mJ / cm 2After being exposed under the above conditions, the substrate was heated in an oven at a temperature of 200° C. for 2 hours. This caused the glass substrate with columnar structures to be bonded to the semiconductor substrate laminate. Next, the adhesive periphery (area including wires) of the laminate after heating was sealed with a sealing resin, and solder balls were formed on the surface of the wiring substrate opposite to the semiconductor substrate side, to obtain solid-state imaging device packages of Examples 1 to 8. Here, the solid-state imaging device package of Example 1 had a structure shown in FIG. 4. Examples 4 to 7 also had a structure shown in FIG. 4. Example 2 had a structure corresponding to FIG. 1. Example 3 had a structure in which the columnar structures in the corners of FIG. 1 were removed in a range of 0.2 mm square. The glass substrate used in Example 8 had columnar structures at three of the four corners. Example 9 reduced the cross-sectional area of the columnar structures and therefore the area in contact with the second substrate (ground area). Example 10 was prepared in the same manner as Example 1, except that 88 g of 1,3,5,7-tetrahydrogen-1,3,5,7-tetramethylcyclotetrasiloxane was replaced with 66 g of 1,3,5,7-tetrahydrogen-1,3,5,7-tetramethylcyclotetrasiloxane and 11 g of DMS-H11 manufactured by Gelest during synthesis of the main polymer of the siloxane-based negative photosensitive resin composition. Example 11 was prepared in the same manner as Example 1, except that 1% by mass of carbon black ("MA100" manufactured by Mitsubishi Chemical Corporation) was added to the adhesive.
[0066] "Comparative Example 1" A solid-state imaging device package of Comparative Example 1 was produced in the same manner as in Example 1, except that a glass substrate on which no columnar structures were formed was used.
[0067] <Various evaluation methods> Next, the measurement method will be described.
[0068] "Method of measuring compressive strength" Each manufacturing example was placed on the measurement table of the measuring device with the columnar structure facing upward. Next, a load was gradually applied from above to the columnar structure with an indenter, and the displacement for each load (the displacement when the indenter pressed into the columnar structure) was measured to obtain a load-displacement curve. The maximum load in the obtained load-displacement curve was divided by the cross-sectional area of the columnar structure to obtain the compressive strength. Detailed measurement conditions are as follows: Measurement device: Nanoindentation tester ("ENT-NEXUS (registered trademark)" manufactured by Elionix) Temperature during measurement (temperature of measurement environment): 60℃ Indenter approach speed: 100 nm / sec Maximum load: 5N Load application acceleration: 0.6mN / sec
[0069] "Measurement of the inclination of the glass substrate of a solid-state image sensor package" A 3D measuring laser microscope (Olympus Corporation "LEXT (registered trademark) OLS5100") was used to measure the inner corners of the adhesive applied to the frame. The height difference between the top surface of the glass substrate of the solid-state imaging device package and the surface of the imaging device substrate was measured, and the maximum-minimum value of the four measurement points was taken as the tilt of the glass substrate. If the tilt value was less than 3 μm, it was rated as "A", if it was 3 μm or more but less than 5 μm, it was rated as "B", if it was 5 μm or more but less than 10 μm, it was rated as "C", if it was 10 μm or more but less than 15 μm, it was rated as "D", and if it was 15 μm or more, it was rated as "E", with A and B being excellent in tilt suppression, C being good in tilt suppression, D being slightly poor in tilt suppression, and E being poor in tilt suppression.
[0070] "Ghost Index" First, for the optical semiconductor device to be evaluated, a ghost flare evaluation system (Tsubosaka Electric Co., Ltd. "GCS-2T") was used to determine the number of pixels (hereinafter referred to as "abnormal pixel number") that exceeded a predetermined threshold value (one hundred millionth of the brightness of the light source), and then the value obtained by dividing the number of abnormal pixels by the total number of pixels (abnormal pixel number / total pixel number) was calculated. Hereinafter, the value obtained by dividing the number of abnormal pixels by the total number of pixels (abnormal pixel number / total pixel number) may be referred to as the abnormal pixel number ratio.
[0071] The abnormal pixel ratio of Comparative Example 1 was set to 100, and the abnormal pixel ratio of the Example was normalized, and the normalized value (hereinafter, referred to as the "ghost index") was used as an index of the performance of suppressing ghost occurrence. When the ghost index was 80 or less, it was evaluated that the occurrence of ghost occurrence was suppressed. On the other hand, when the ghost index was more than 80, it was evaluated that the occurrence of ghost occurrence was not suppressed.
[0072] <Evaluation Results> In Examples 1 to 6, the glass tilt was suppressed excellently.
[0073] In Examples 1 to 6, the ghost index was significantly reduced compared to Comparative Example 1 since the glass tilt was suppressed.
[0074] Although Examples 7 to 10 were inferior to Examples 1 to 6, the glass tilt and ghost index were suppressed compared to Comparative Example 1.
[0075] The above results show that by using the structure according to the present invention, it is possible to provide a solid-state imaging device package with high structural accuracy.
[0076] [Table 1] [Explanation of symbols]
[0077] 1. Solid-state imaging device package 10. First substrate (transparent substrate) 20. Second board 30. Solid-state imaging element 40.Cured material layer 50. Columnar structure
Claims
1. A transparent first substrate; a second substrate having a solid-state imaging element; a hardened layer interposed between the first substrate and the second substrate and disposed so as to surround the solid-state imaging element; A plurality of columnar structures embedded in the cured material layer and defining a distance between the first substrate and the second substrate; A solid-state imaging element package comprising:
2. The cured material layer is formed in a rectangular frame shape, The solid-state imaging device package according to claim 1 , wherein the columnar structures are disposed at corners of the cured material layer.
3. The solid-state imaging device package according to claim 2 , wherein a plurality of the columnar structures are arranged at each of the corners.
4. The solid-state imaging device package according to claim 1 , wherein the cured material layer contains a colorant.
5. A solid-state imaging device package according to any one of claims 1 to 3, a solid-state imaging element package assembly, wherein the first substrate and the second substrate are formed as an integrated aggregate first substrate and an integrated aggregate second substrate, respectively, via a dicing space.
6. A method for manufacturing a solid-state imaging element package, comprising: a transparent first substrate; a second substrate having a solid-state imaging element; and a cured material layer disposed between the first substrate and the second substrate and surrounding the solid-state imaging element, the method comprising the steps of: forming a plurality of columnar structures on the first substrate, the columnar structures being embedded in the cured material layer and defining a distance between the first substrate and the second substrate; Applying an adhesive to the second substrate to form the cured layer; bonding the first substrate and the second substrate with the adhesive so that the columnar structures are inserted into the adhesive; A method for manufacturing a solid-state imaging device package comprising:
7. the first substrate and the second substrate are provided as a first substrate aggregate and a second substrate aggregate, respectively, in which a plurality of substrates are arranged with a dicing space therebetween; the step of forming the columnar structures, the step of applying the adhesive, and the step of bonding the first substrate and the second substrate are performed using the aggregate first substrate and the aggregate second substrate; 7. The method for manufacturing a solid-state imaging device package according to claim 6, further comprising the step of: dividing the solid-state imaging device package into individual pieces by dicing after the step of bonding the first substrate and the second substrate.
8. 8. The method for producing a solid-state image pickup device package according to claim 6, wherein the columnar structures are made of a negative photosensitive resin.
Citation Information
Patent Citations
Solid-state imaging device, semiconductor wafer, optical device module, method of manufacturing the solid-state imaging device, and method of manufacturing the optical device module
JP2004296453A
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