High frequency module

Abstract

To provide a high-frequency module capable of downsizing an achieving cost reduction.SOLUTION: A high-frequency module includes: a first circuit that inputs and outputs signals in a first frequency band; and a second circuit that inputs and outputs signals in a second frequency different from the first frequency band; and a first receiving part in the first circuit is selectively connected to either the first external connect terminal or the second external connect terminal via a first switch in the high-frequency switches after passing through a bandpass filter. A first transmission part or a second receiving part in the first circuit is selectively connected via a second switch in the high-frequency switch. A second switch is connected to a diplexer that is connected to a third external connection terminal of the terminal. A second transmission part in the second circuit is connected to the diplexer or a fourth external connection terminal via a third switch in the high-frequency switch. A third receiving part or a fourth receiving part in the second circuit is selectively connected to a fourth external connection terminal via a third switch.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a high-frequency module.

Background Art

[0002] FIG. 1 of Patent Document 1 below describes a wireless portable unit including a UWB (Ultra Wide Band) module and a CDMA (Code Division Multiple Access) module.

Prior Art Document

Patent Document

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the wireless portable unit described in Patent Document 1, since it includes two modules, the size becomes large and the cost becomes high.

[0005] The present disclosure has been made in view of the above, and aims to miniaturize and reduce the cost of a high-frequency module.

Means for Solving the Problems

[0006] A high-frequency module according to one aspect of the present disclosure includes a first circuit that inputs and outputs signals in a first frequency band, a second circuit that inputs and outputs signals in a second frequency band different from the first frequency band, a high-frequency switch, a diplexer, a first external connection terminal and a second external connection terminal to which signals received from a first antenna and a second antenna are input, and a third external connection terminal and a fourth external connection terminal to which signals received from a third antenna and a fourth antenna are input, or to which signals are transmitted to the third antenna and the fourth antenna. A first receiving unit in the first circuit is selectively connected to either the first external connection terminal or the second external connection terminal via a band-pass filter and then via a first switch in the high-frequency switch. A first transmitting unit or a second receiving unit in the first circuit is selectively connected via a second switch in the high-frequency switch. Further, the second switch is connected to the diplexer connected to the third external connection terminal. A second transmitting unit in the second circuit is connected to the diplexer or the fourth external connection terminal via a third switch in the high-frequency switch. A third receiving unit or a fourth receiving unit in the second circuit is selectively connected to the fourth external connection terminal via the third switch.

Advantages of the Invention

[0007] According to the present disclosure, miniaturization and cost reduction of the high-frequency module are made possible.

Brief Description of the Drawings

[0008]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Embodiments for Carrying Out the Invention

[0009] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. Note that the present invention is not limited by this embodiment. Each embodiment is an example, and it goes without saying that partial substitution or combination of the configurations shown in different embodiments is possible. In the following embodiments after the second embodiment, descriptions of matters common to the first embodiment will be omitted, and only different points will be described. In particular, the same operational effects due to the same configurations will not be sequentially mentioned for each embodiment.

[0010] <First Embodiment> (Configuration) FIG. 1 is a diagram showing the configuration of the high-frequency module according to the first embodiment.

[0011] The high-frequency module 1 includes a substrate 2, a UWB (Ultra Wide Band) circuit 3, a UHB (Ultra High Band) circuit 4, band-pass filters 5 to 10, and switches 11 to 13. The UWB circuit 3, the UHB circuit 4, the band-pass filters 5 to 10, and the switches 11 to 13 are mounted on the substrate 2.

[0012] UWB is defined, for example, in IEEE802.15.4z, and the frequency band is exemplified as being from 6 GHz to 8 GHz, but the present disclosure is not limited thereto. UHB is exemplified by n77, n78, and n79 of 5GNR (5th Generation New Radio), and the frequency band is exemplified as being from 3.3 GHz to 5 GHz, but the present disclosure is not limited thereto.

[0013] The UWB circuit 3 corresponds to an example of the "first circuit" of the present disclosure. The UHB circuit 4 corresponds to an example of the "second circuit" of the present disclosure.

[0014] In the first embodiment, the "second circuit" is the UHB circuit 4, but the present disclosure is not limited thereto. The "second circuit" may be, for example, an MHB (Middle High Band) circuit. MHB is exemplified by B39 and B41 of LTE (Long Term Evolution), and the frequency band is exemplified as being from 1.8 GHz to 2.7 GHz. It is exemplified that the frequency band of the signal input and output by the "second circuit" is lower than the frequency band of the signal input and output by the "first circuit".

[0015] The substrate 2 has terminals 1a to 1e. The terminal 1a is electrically connected to the antenna ANT1. The terminal 1b is electrically connected to the antenna ANT2. The terminal 1c is electrically connected to the antenna ANT3. The terminal 1d is electrically connected to the antenna ANT4. The terminal 1e is electrically connected to the antenna ANT5.

[0016] The UWB circuit 3 includes a receiving unit 21, a transmitting unit 22, and a receiving unit 23.

[0017] The receiving unit 21 corresponds to an example of the "first receiving unit" of the present disclosure. The transmitting unit 22 corresponds to an example of the "first transmitting unit" of the present disclosure. The receiving unit 23 corresponds to an example of the "second receiving unit" of the present disclosure.

[0018] The UWB circuit 3 may be a single semiconductor device formed on a Si (silicon) substrate.

[0019] The UHB circuit 4 includes a transmission unit 31 and a reception unit 32. The transmission unit 31 includes a power amplifier 41. The reception unit 32 includes a low-noise amplifier 51 and a low-noise amplifier 52.

[0020] The transmission unit 31 may be a single semiconductor device formed on a GaAs (gallium arsenide) substrate. The power amplifier 41 may be an HBT (Heterojunction Bipolar Transistor) formed on a GaAs substrate. The reception unit 32 may be a single semiconductor device formed on an Si substrate. Each of the low-noise amplifier 51 and the low-noise amplifier 52 may be an FET (Field Effect Transistor) formed on an Si substrate.

[0021] The power amplifier 41 corresponds to an example of the "second transmission unit" of the present disclosure. The low-noise amplifier 51 corresponds to an example of the "third reception unit" of the present disclosure. The low-noise amplifier 52 corresponds to an example of the "fourth reception unit" of the present disclosure.

[0022] The reception unit 21 is electrically connected to the terminal 11a of the switch 11 via a band-pass filter 5. The terminal 11b of the switch 11 is electrically connected to the antenna ANT1 via the terminal 1a. The terminal 11c of the switch 11 is electrically connected to the antenna ANT2 via the terminal 1b.

[0023] The switch 11 selectively electrically connects between the terminal 11a and the terminal 11b, or between the terminal 11a and the terminal 11c.

[0024] The transmission unit 22 is electrically connected to the terminal 12a of the switch 12 via a band-pass filter 6. The reception unit 23 is electrically connected to the terminal 12b of the switch 12 via a band-pass filter 7. The terminal 12c of the switch 12 is electrically connected to the antenna ANT3 via the terminal 1c.

[0025] Switch 12 selectively makes an electrical connection between terminal 12a and terminal 12c, or between terminal 12b and terminal 12c.

[0026] Power amplifier 41 is electrically connected to terminal 13a of switch 13 via band-pass filter 8. Low-noise amplifier 51 is electrically connected to terminal 13b of switch 13 via band-pass filter 9. Low-noise amplifier 52 is electrically connected to terminal 13c of switch 13 via band-pass filter 10. Terminal 13d of switch 13 is electrically connected to antenna ANT4 via terminal 1d. Terminal 13e of switch 13 is electrically connected to antenna ANT5 via terminal 1e.

[0027] Switch 13 selectively makes an electrical connection between terminal 13a and terminal 13d, between terminal 13b and terminal 13d, or between terminal 13c and terminal 13d. Further, switch 13 selectively makes an electrical connection between terminal 13a and terminal 13e, between terminal 13b and terminal 13e, or between terminal 13c and terminal 13e.

[0028] (Effect) The high-frequency module 1 can mount the UWB circuit 3 and the UHB circuit 4 on one substrate 2. Thereby, the high-frequency module 1 can reduce the mounting area of the communication device (for example, a mobile phone device), can be miniaturized, and can be cost-reduced.

[0029] <Second Embodiment> (Configuration) FIG. 2 is a diagram showing the configuration of the high-frequency module according to the second embodiment.

[0030] The high-frequency module 1A does not include the band-pass filter 6 and the band-pass filter 7 as compared with the high-frequency module 1 (see FIG. 1). Further, the high-frequency module 1A further includes a diplexer 14 as compared with the high-frequency module 1. Further, the high-frequency module 1A does not have a terminal 1e as compared with the high-frequency module 1. Therefore, the antenna ANT5 (see FIG. 1) is not required for the high-frequency module 1A.

[0031] The transmission unit 22 is electrically connected to the terminal 12a of the switch 12. The reception unit 23 is electrically connected to the terminal 12b of the switch 12. The terminal 12c of the switch 12 is electrically connected to the terminal 14a of the diplexer 14.

[0032] The terminal 13d of the switch 13 is electrically connected to the terminal 14b of the diplexer 14. The terminal 13e of the switch 13 is electrically connected to the antenna ANT4 via the terminal 1d.

[0033] The terminal 14c of the diplexer 14 is electrically connected to the antenna ANT3 via the terminal 1c.

[0034] The diplexer 14 passes the UWB signal input to the terminal 14a through the band and outputs it from the terminal 14c. The diplexer 14 passes the UHB signal input to the terminal 14b through the band and outputs it from the terminal 14c.

[0035] The diplexer 14 passes the UWB signal component in the high-frequency signal input to the terminal 14c through the band and outputs it from the terminal 14a. The diplexer 14 passes the UHB signal component in the high-frequency signal input to the terminal 14c through the band and outputs it from the terminal 14b.

[0036] That is, the antenna ANT3 is shared for the transmission and reception of UWB radio waves and the transmission and reception of UHB radio waves.

[0037] (Effect) The high-frequency module 1A can reduce the number of band-pass filters from six to four compared with the high-frequency module 1. Also, the high-frequency module 1A can reduce the number of antennas from five to four compared with the high-frequency module 1.

[0038] As a result, the high-frequency module 1A can further reduce the mounting area of the communication device, can be further miniaturized, and can be further cost-reduced.

[0039] <The Third Embodiment> (Configuration) FIG. 3 is a diagram showing the configuration of the high-frequency module according to the third embodiment.

[0040] The high-frequency module 1B includes high-frequency switches 15, compared with the high-frequency module 1 (see FIG. 1). And the high-frequency switch 15 is formed on one semiconductor device.

[0041] The switch 11 corresponds to an example of the "first switch" of the present disclosure. The switch 12 corresponds to an example of the "second switch" of the present disclosure. The switch 13 corresponds to an example of the "third switch" of the present disclosure.

[0042] (Effect) In the high-frequency module 1B, the high-frequency switch 15 is formed on one semiconductor device.

[0043] As a result, the high-frequency module 1B can reduce the number of components, so that the mounting area of the communication device can be further reduced, it can be further miniaturized, and it can be further cost-reduced.

[0044] (Combination with the Second Embodiment) The third embodiment can be combined with the second embodiment. That is, in the high-frequency module 1A (see FIG. 2) of the second embodiment, the switches 11, 12, and 13 may be replaced with the high-frequency switch 15.

[0045] <Fourth Embodiment> (Structural Example) FIG. 4 is an explanatory view of the high-frequency module according to the fourth embodiment as viewed from a direction parallel to the substrate.

[0046] The high-frequency module 1C is mounted on the system board 121 of the communication device.

[0047] The high-frequency module 1C includes a substrate 101, a semiconductor device 102, a semiconductor device 103, a shield member 104, a filling member 105, a conductive member 106, and a conductive member 107.

[0048] The semiconductor device 102 has a power amplifier 41 (see FIG. 1 etc.) formed thereon. That is, the semiconductor device 102 is a semiconductor device including a GaAs substrate.

[0049] The semiconductor device 103 has a UWB circuit 3 (see FIG. 1 etc.) formed thereon. That is, the semiconductor device 103 is a semiconductor device including a Si substrate.

[0050] The substrate 101 extends along the X-Y plane.

[0051] The first main surface (the main surface on the Z-axis base end side) of the semiconductor device 102 is mounted on the first main surface 101a (the main surface on the Z-axis tip end side) of the substrate 101 via bumps, solder, etc. The bumps are, for example, pillar bumps, and for example, copper (Cu) is used. Each bump may use a low-resistance metal material such as aluminum (Al) or gold (Au) in addition to copper. Each bump may be, for example, a solder bump or a stud bump.

[0052] The first main surface (the main surface on the Z-axis tip end side) of the semiconductor device 103 is mounted on the second main surface 101b (the main surface on the Z-axis base end side) of the substrate 101 via bumps, solder, etc.

[0053] The first main surface 101a and the four side surfaces of the substrate 101 are covered by the shield member 104.

[0054] The shielding member 104 is exemplified by a metal. Examples of the metal include SUS (stainless steel) and copper, but the present disclosure is not limited thereto.

[0055] The shielding member 104 shields the radiation of the high-frequency signal generated from the high-frequency module 1C.

[0056] A filling member 105 is filled between the shielding member 104 and the substrate 101, and between the shielding member 104 and each component. Examples of the filling member 105 include resins, but the present disclosure is not limited thereto.

[0057] Between the second main surface 101b and the system substrate 121, they are electrically connected via the conductive member 106 and the conductive member 107.

[0058] The first main surface (the main surface on the Z-axis tip side) of the semiconductor device 103 is mounted on the substrate 101 and is electrically connected. The second main surface (the main surface on the Z-axis base end side) of the semiconductor device 103 is in contact with the system substrate 121.

[0059] The heat generated from the semiconductor device 102 is conducted to the system substrate 121 in the direction opposite to the Z-axis direction via the substrate 101 and the filling member 105, as indicated by the arrow 108.

[0060] The heat generated from the semiconductor device 103 is conducted to the system substrate 121 from the second main surface of the semiconductor device 103 in the direction opposite to the Z-axis direction, as indicated by the arrow 109.

[0061] (Layout example) FIG. 5 is an explanatory view seen from a direction perpendicular to the substrate of the high-frequency module according to the fourth embodiment.

[0062] The high-frequency module 1D includes a substrate 141 and semiconductor devices 142 to 146.

[0063] The semiconductor device 142 has a power amplifier 41 (see FIG. 1 etc.) formed therein. That is, the semiconductor device 142 is a semiconductor device including a GaAs substrate.

[0064] The semiconductor device 143 is a power amplifier controller that controls the power amplifier 41 (semiconductor device 142).

[0065] The semiconductor device 144 has a low-noise amplifier 51 and a low-noise amplifier 52 (see FIG. 1 etc.) formed therein. That is, the semiconductor device 144 is a semiconductor device including a Si substrate.

[0066] The semiconductor device 145 has a high-frequency switch 15 (see FIG. 3) formed therein.

[0067] The semiconductor device 146 has a UWB circuit 3 (see FIG. 1 etc.) formed therein. That is, the semiconductor device 103 is a semiconductor device including a Si substrate.

[0068] The substrate 141 extends along the X-Y plane.

[0069] The semiconductor device 142 is mounted on the first main surface of the substrate 141 (the main surface on the Z-axis tip side, the main surface on the front side of the paper) on the X-axis tip side and the Y-axis base end side.

[0070] The semiconductor device 143 is mounted on the first main surface of the substrate 141 (the main surface on the Z-axis tip side, the main surface on the front side of the paper) on the X-axis base end side and the Y-axis base end side.

[0071] The semiconductor device 144 is mounted on the first main surface of the substrate 141 (the main surface on the Z-axis tip side, the main surface on the front side of the paper) on the X-axis base end side and adjacent to the Y-axis tip side of the semiconductor device 143.

[0072] The semiconductor device 145 is mounted on the first main surface of the substrate 141 (the main surface on the Z-axis tip side, the main surface on the front side of the paper) on the X-axis base end side and the Y-axis tip side.

[0073] The semiconductor device 146 is mounted on the second main surface (the main surface on the Z-axis proximal side, the main surface on the back side of the paper) of the substrate 141, on the X-axis distal side and the Y-axis distal side.

[0074] (Effect) [1] For example, if UWB is set from 6 GHz to 8 GHz and UHB is set from 3.3 GHz to 5 GHz, the second harmonic of the UHB signal may affect the UWB circuit 3.

[0075] However, the semiconductor device 102 is mounted on the first main surface 101a of the substrate 101, and the semiconductor device 103 is mounted on the second main surface 101b of the substrate 101. Also, the first main surface 101a and the four side surfaces of the substrate 101 are covered by the shield member 104.

[0076] Thereby, the high-frequency module 1C can suppress the influence of the harmonic wave during the transmission of the UHB signal on the UWB circuit 3. Therefore, the high-frequency module 1C can mount the semiconductor device 102 (UWB circuit 3) and the semiconductor device 103 (UHB circuit 4) in one module while ensuring high isolation between the semiconductor device 102 and the semiconductor device 103.

[0077] [2] The semiconductor device 102 (power amplifier 41) includes a GaAs substrate in consideration of high-frequency characteristics. The heat generated from the semiconductor device 102 conducts along the path indicated by the arrow 108.

[0078] The semiconductor device 103 (UWB circuit 3) includes a Si substrate with high thermal conductivity. And the second main surface of the semiconductor device 103 is in contact with the system substrate 121. The heat generated from the semiconductor device 103 conducts to the system substrate 121 along the path indicated by the arrow 109.

[0079] In this way, the high-frequency module 1C separates the heat conduction path (arrow 108) of the heat generated from the semiconductor device 102 and the heat conduction path (arrow 109) of the heat generated from the semiconductor device 103. Therefore, the high-frequency module 1C can suppress the mutual influence (characteristic degradation) of the semiconductor device 102 and the semiconductor device 103 due to heat.

[0080] (Modification example) In the fourth embodiment, the semiconductor device 103 is configured such that the UWB circuit 3 is formed, but the present disclosure is not limited thereto. The semiconductor device 103 may be formed with a circuit for transmitting and receiving LB (Low Band) signals. LB is, for example, n5, n8, n28 of 5G NR, and the frequency band is exemplified as 1 GHz or less. In this case, the fourth harmonic of the LB signal may affect the UHB circuit 4.

[0081] However, the semiconductor device 102 is mounted on the first main surface 101a of the substrate 101, and the semiconductor device 103 is mounted on the second main surface 101b of the substrate 101. Further, the first main surface 101a and the four side surfaces of the substrate 101 are covered by the shield member 104.

[0082] Thereby, the high-frequency module 1C can suppress the harmonic wave at the time of transmission of the LB signal from affecting the UHB circuit 4. Therefore, the high-frequency module 1C can mount the semiconductor device 102 (UWB circuit 3) and the semiconductor device 103 (LB circuit) in one module while ensuring high isolation between the semiconductor device 102 and the semiconductor device 103.

[0083] (Combination with other embodiments) The fourth embodiment can be combined with the first to third embodiments.

[0084] <Fifth Embodiment> (Configuration) FIG. 6 is a diagram showing the configuration of the high-frequency module according to the fifth embodiment.

[0085] The high-frequency module 1E further includes a terminal 1f on the substrate 2 as compared with the high-frequency module 1 (see FIG. 1). A timing signal S indicating the timing for the UHB circuit 4 to receive a signal (DL: Down Link) and the timing for transmitting a signal (UL: Up Link) is input to the terminal 1f. The timing signal S is input to the UWB circuit 3. The UWB circuit 3 operates according to the timing signal S.

[0086] (Operation Timing) FIG. 7 is a diagram for explaining the operation timing of the high-frequency module according to the fifth embodiment.

[0087] The UHB circuit 4 performs transmission and reception in units of radio frames. The time length of one radio frame is exemplified as 10 ms. One radio frame includes 10 sub-frames. The time length of one sub-frame is exemplified as 1 ms. One sub-frame includes two slots. The time length of one slot is exemplified as 0.5 ms. One slot includes 14 symbols. The symbols are of three types: DL, F (Flexible) where no transmission or reception is performed, and UL.

[0088] The UWB circuit 3 performs signal transmission and reception (on) during the period (DL) when the UHB circuit 4 is receiving a signal according to the timing signal S. The UWB circuit 3 does not perform signal transmission and reception (off) during the period (UL) when the UHB circuit 4 is transmitting a signal according to the timing signal S.

[0089] (Effect) For example, if UWB is set from 6 GHz to 8 GHz and UHB is set from 3.3 GHz to 5 GHz, during the period (UL) when the UHB circuit 4 is transmitting a signal, the second harmonic of the UHB signal may affect the UWB circuit 3.

[0090] Therefore, the UWB circuit 3 does not perform signal transmission and reception (off) during the period (UL) when the UHB circuit 4 is transmitting a signal.

[0091] During the period (DL) when the UHB circuit 4 is receiving a signal, the second harmonic of the UHB signal is not generated.

[0092] Therefore, the UWB circuit 3 transmits and receives signals (on) during the period (DL) when the UHB circuit 4 is receiving a signal.

[0093] Thereby, the high-frequency module 1E can suppress the influence of the harmonic at the time of transmitting the UHB signal on the UWB circuit 3. Therefore, the high-frequency module 1E can eliminate the restrictions on the arrangement of the UWB circuit 3 and the UHB circuit 4. Further, the high-frequency module 1E can mount the UWB circuit 3 and the UHB circuit 4 on one substrate 2. Thereby, the high-frequency module 1E can reduce the mounting area of the communication device, can be miniaturized, and can be cost-reduced.

[0094] (Modification example) In the fifth embodiment, the UHB circuit 4 may be replaced with another time-division duplex (TDD) type transmission / reception circuit.

[0095] (Combination with other embodiments) The fifth embodiment can be combined with the first to fourth embodiments.

[0096] <Configuration example of the present disclosure> The present disclosure can also take the following configuration.

[0097] (1) A first circuit for inputting and outputting a signal in a first frequency band, A second circuit for inputting and outputting a signal in a second frequency band lower than the first frequency band, A high-frequency switch, A diplexer, A first external connection terminal and a second external connection terminal to which signals received from the first antenna and the second antenna are input, A third external connection terminal and a fourth external connection terminal to which signals received from the third antenna and the fourth antenna are input, or to which signals are transmitted to the third antenna and the fourth antenna, including The first receiving unit in the first circuit is selectively connected to either the first external connection terminal or the second external connection terminal via the first switch in the high-frequency switch after passing through a band-pass filter. The first transmitting unit or the second receiving unit in the first circuit is selectively connected via the second switch in the high-frequency switch, and further, the second switch is connected to the diplexer connected to the third external connection terminal. The second transmitting unit in the second circuit is connected to the diplexer or the fourth external connection terminal via the third switch in the high-frequency switch. The third receiving unit or the fourth receiving unit in the second circuit is selectively connected to the fourth external connection terminal via the third switch. High-frequency module.

[0098] (2) The high-frequency module according to (1) above, wherein the high-frequency switch is formed on one semiconductor device. High-frequency module.

[0099] (3) The high-frequency module according to (1) or (2) above, wherein the first circuit, the second circuit, the high-frequency switch, and the diplexer are mounted on one substrate. High-frequency module.

[0100] (4) The high-frequency module according to (3) above, wherein the second transmitting unit in the second circuit is mounted on the first main surface of the substrate, and the first circuit is mounted on the second main surface of the substrate. High-frequency module.

[0101] (5) The high-frequency module according to (4) above, The third receiving unit and the fourth receiving unit in the second circuit are mounted on the first main surface of the substrate. High-frequency module.

[0102] (6) The high-frequency module according to (4) above, The third receiving unit and the fourth receiving unit in the second circuit are mounted on the second main surface of the substrate. High-frequency module.

[0103] (7) The high-frequency module according to any one of (4) to (6) above, The first main surface and the four side surfaces of the substrate are covered by a shielding member. High-frequency module.

[0104] (8) The high-frequency module according to any one of (4) to (7) above, The second main surface of the substrate is mounted on another substrate via a conductive member, The first circuit is in contact with the other substrate. High-frequency module.

[0105] (9) The high-frequency module according to any one of (1) to (8) above, The first circuit transmits and receives signals during the period when the second circuit is receiving signals, and does not transmit and receive signals during the period when the second circuit is transmitting signals. High-frequency module.

[0106] (10) The high-frequency module according to any one of (1) to (9) above, The first frequency band is UWB (Ultra Wide Band), The second frequency band is UHB (Ultra High Band). High-frequency module.

[0107] Note that the above-described embodiments are for facilitating the understanding of the present invention and are not for limiting the interpretation of the present invention. The present invention can be changed / improved without departing from its gist, and equivalents thereof are also included in the present invention.

Explanation of reference numerals

[0108] 1, 1A, 1B, 1C, 1D, 1E High-frequency module 2, 101, 141 Substrate 3 UWB circuit 4 UHB circuit 5, 6, 7, 8, 9, 10 Band-pass filter 11, 12, 13 Switch 14 Diplexer 15 High-frequency switch 21 Receiver 22 Transmitter 23 Receiver 31 Transmitter 32 Receiver 41 Power amplifier 51, 52 Low-noise amplifier 102, 103, 142, 143, 144, 145, 146 Semiconductor device 104 Shielding member 105 Filling member 106, 107 Conductive member

Claims

1. A first circuit for inputting and outputting signals in a first frequency band, A second circuit for inputting and outputting signals in a second frequency band different from the first frequency band, A high-frequency switch, A diplexer, A first external connection terminal and a second external connection terminal to which signals received from a first antenna and a second antenna are input, A third external connection terminal and a fourth external connection terminal to which signals received from a third antenna and a fourth antenna are input, or to which signals are transmitted to the third antenna and the fourth antenna, comprising, The first receiving section in the first circuit is selectively connected to either the first external connection terminal or the second external connection terminal via a first switch in the high-frequency switch after passing through a band-pass filter, The first transmitting section or the second receiving section in the first circuit is selectively connected via a second switch in the high-frequency switch, and further the second switch is connected to the diplexer connected to the third external connection terminal, The second transmitting section in the second circuit is connected to the diplexer or the fourth external connection terminal via a third switch in the high-frequency switch, The third receiving section or the fourth receiving section in the second circuit is selectively connected to the fourth external connection terminal via the third switch, A high-frequency module.

2. The high-frequency module according to claim 1, wherein the high-frequency switch is formed in one semiconductor device, A high-frequency module.

3. The high-frequency module according to claim 1, wherein the first circuit, the second circuit, the high-frequency switch and the diplexer are mounted on one substrate, A high-frequency module.

4. The high-frequency module according to claim 3, wherein the second transmission unit in the second circuit is mounted on the first main surface of the substrate, the first circuit is mounted on the second main surface of the substrate, High-frequency module.

5. The high-frequency module according to claim 4, wherein the third receiving unit and the fourth receiving unit in the second circuit are mounted on the first main surface of the substrate, High-frequency module.

6. The high-frequency module according to claim 4, wherein the third receiving unit and the fourth receiving unit in the second circuit are mounted on the second main surface of the substrate, High-frequency module.

7. The high-frequency module according to claim 4, wherein the first main surface and the four side surfaces of the substrate are covered by a shielding member, High-frequency module.

8. The high-frequency module according to claim 4, wherein the second main surface of the substrate is mounted on another substrate via a conductive member, the first circuit is in contact with the other substrate, High-frequency module.

9. The high-frequency module according to claim 1, wherein the first circuit transmits and receives signals during the period when the second circuit is receiving signals, and does not transmit and receive signals during the period when the second circuit is transmitting signals, High-frequency module.

10. The high-frequency module according to claim 1, wherein The first frequency band is UWB (Ultra Wide Band), The second frequency band is UHB (Ultra High Band), High-frequency module.

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