Gas injectors for epitaxy and CVD chambers

Abstract

To provide a process chamber and a gas injector for a process chamber for processing a semiconductor substrate that meets the demand for increased production yields and faster throughput while meeting the temperature control standards required for manufacturing next generation devices.SOLUTION: One or more gas injectors 108 are coupled to a process chamber at an injection ring, each of the gas injectors receiving process gas and distributing the process gas to one or more gas outlets 178, include a plurality of passages 614a, 614b, a fin array 620a, 620b, and a baffle array, and are individually heated. Additionally, a gas mixing assembly is utilized to control the concentration of the process gas flowing from each of the gas injectors into the processing space, allowing the concentration and flow rate of the process gas to be controlled.SELECTED DRAWING: Figure 6B

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to apparatuses and methods for fabricating semiconductor substrates. More specifically, the apparatuses disclosed herein relate to components for gas injection within the scope of semiconductor processes.

Background Art

[0002] Semiconductor substrates are processed for various applications including the manufacture of integrated devices and micro-devices. During processing, the substrate is placed on a susceptor within a processing chamber. The susceptor is supported by a support shaft that is rotatable about a central axis. By precisely controlling heat sources such as a plurality of heating lamps disposed above and below the substrate, the substrate can be heated within a very strict tolerance range. The temperature of the substrate can affect the uniformity of the material deposited on the substrate.

[0003] The ability to accurately control the substrate temperature within the processing chamber has a significant impact on throughput and production yield. In conventional processing chambers, it has been difficult to meet the increasingly high demands for improving production yield and accelerating throughput while meeting the temperature control criteria required for the manufacture of next-generation devices.

[0004] Therefore, there is a need for improved processing chambers and gas injection apparatuses that can replace hardware components at low cost and enhance the control of gas flow across the substrate.

Summary of the Invention

[0005] In one embodiment of the present disclosure, a gas injector for use within a processing chamber is described. The gas injector includes an injector body and an injector insertion portion coupled to the injector body and extending outwardly from the injector body. The injector insertion portion includes a gas introduction passage, a gas diffusion passage, and an outlet opening. The gas introduction passage is disposed through the injector body and is fluidly coupled to the injector insertion portion. The gas diffusion passage is coupled to the gas introduction passage and forms a gas distribution tree. The outlet opening is disposed through the injection surface of the injector insertion portion on the side opposite the gas introduction passage and is in fluid communication with the gas diffusion passage.

[0006] In other embodiments, a chamber for substrate processing is described. The processing chamber includes a base ring, an injection ring, and one or more gas injectors. The base ring includes a substrate transfer passage disposed therethrough and one or more upper chamber exhaust passages. The injection ring is disposed above the base ring, and one or more injector passages are disposed through the injection ring. One or more gas injectors are each disposed within one of the injector passages. Each of the gas injectors includes an injector body configured to couple to an injector support surface of the injection ring and an injector insertion portion extending outwardly from the injector body. The injector insertion portion includes a gas introduction passage, a gas diffusion passage, and an outlet opening disposed through the injection surface of the injector insertion portion on the side opposite the gas introduction passage and in fluid communication with the gas diffusion passage.

[0007] In other embodiments, a mixed gas assembly for use in a heat treatment chamber is described. The mixed gas assembly includes a process gas source, a gas reservoir, an exhaust induction valve, an exhaust pump, a plurality of splitter valves, a processing chamber, and a master flow controller. The gas reservoir is fluidly coupled to the process gas source. The exhaust induction valve is fluidly coupled to the gas reservoir. The exhaust pump is fluidly coupled to the exhaust induction valve. The plurality of splitter valves are arranged in parallel and are fluidly coupled to the gas reservoir. The processing chamber includes a processing space in fluid communication with each of the splitter valves. The master flow controller is configured to control the flow rate through each of the exhaust induction valve and the plurality of splitter valves.

[0008] To enable a more detailed understanding of the features described above of the present disclosure, a more specific description of the present disclosure, briefly summarized above, can be obtained by reference to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings illustrate only exemplary embodiments and should not be regarded as limiting the scope of the present disclosure, and other equally effective embodiments may be permitted.

Brief Description of the Drawings

[0009]

Figure 1

Figure 2A

Figure 2B

Figure 3A

Figure 3B

Figure 3C

Figure 4A

Figure 4B

Figure 5A

Figure 5B

Figure 5C

Figure 5D

Figure 5E

Figure 6A

Figure 6B

Figure 6C

Figure 6D

Figure 7A

Figure 7B

Figure 8

Figure 9A

Figure 9B

DETAILED DESCRIPTION OF THE INVENTION

[0010] For ease of understanding, the same reference numbers are used to indicate the same elements common to multiple figures whenever possible. It is assumed that the components and features of one embodiment can be beneficially incorporated into other embodiments without further description.

[0011] Embodiments of the present disclosure generally relate to apparatus for semiconductor processing. More specifically, the apparatus disclosed herein relates to a processing chamber and its components. The processing chamber is configured as a thermal deposition chamber, such as an epitaxial deposition chamber. The processing chamber disclosed herein enables improved process gas flow and heating of the substrate. Since the components of the processing chamber are less expensive than those of conventional chambers, the replacement cost of a part of the processing chamber after a part of the chamber body has worn out or when an improved design has been applied to a part of the chamber body is reduced. The disclosed processing chamber overcomes conventional problems including improved process gas flow through the chamber space and more uniform thermal control, thereby improving throughput and process yield.

[0012] The components of the processing chamber are also disclosed herein. The components disclosed herein include an injection ring, a base ring, an upper lamp module, a lower lamp module, a susceptor, a rotation assembly, an upper liner, a lower liner, and one or more heating elements. Each of the components of the processing chamber is used together to flow one or more process gases horizontally across the surface of the substrate. The components of the processing chamber are coupled to each other to form a processing space in which the substrate is processed, for example, by epitaxial deposition.

[0013] FIG. 1 is a schematic view of a processing chamber 100 according to an embodiment of the present disclosure. The processing chamber 100 is an epitaxial deposition chamber and can be used as part of a cluster tool (not shown). The processing chamber 100 is utilized to grow an epitaxial film on a substrate such as the substrate 150. The processing chamber 100 generates a cross-flow of precursors across the upper surface of the substrate 150 during processing.

[0014] The processing chamber 100 includes an upper lamp module 102, a lower lamp module 104, a chamber body assembly 106, a susceptor assembly 124, a lower window 120, and an upper window 122. The susceptor assembly 124 is disposed between the susceptor assembly 124 and the lower lamp module 104. The lower window 120 is disposed between the susceptor assembly 124 and the lower lamp module 104. The upper window 122 is disposed between the susceptor assembly 124 and the upper lamp module 102.

[0015] The upper lamp module 102 is disposed above the susceptor assembly 124 and is configured to heat a substrate such as the substrate 150 disposed on the susceptor assembly 124. The upper lamp module 102 includes an upper module body 126 and a plurality of lamp openings 128 disposed through the upper module body 126. A lamp 130 is disposed in each of the plurality of lamp openings 128. Each lamp 130 is coupled to a lamp base 129. Each of the lamp bases 129 supports one of the lamps 130 and electrically connects each lamp 130 to a power source (not shown). Each lamp 129 extends and is fixed in an orientation generally perpendicular within the opening 128. As used herein, the generally perpendicular orientation of the lamp 130 is substantially perpendicular to the substrate support surface of the susceptor 124. The perpendicular orientation of the lamp 130 is not necessarily perpendicular to the substrate support surface but can be at an angle of about 30 degrees to about 150 degrees, for example, at an angle of about 45 degrees to about 135 degrees, for example, at an angle of about 70 degrees to about 110 degrees with respect to the substrate support surface 906 (FIG. 9).

[0016] Continuing to refer to FIG. 1, the upper lamp module 102 further includes a heating gas passage 136 and a pyrometer passage 138. A heating gas source 132 is fluidly coupled to the heating gas passage 136. The heating gas passage 136 extends from the upper surface to the bottom surface of the upper module body 126. The heating gas passage 136 is configured such that a heated gas, such as heated air or a heated inert gas, can flow from the heating gas source 132 to the upper surface of the upper window 122 and convectively heat the upper window 122. The heated gas is supplied to an upper plenum 180 defined between the upper lamp module 102 and the upper window 122. A heating gas exhaust passage 142 is also disposed through the upper module body 126. The heating gas exhaust passage 142 is coupled to a heating exhaust pump 140. The heating exhaust pump 140 removes gas from the upper plenum 180. The heating exhaust pump 140 also functions as an exhaust pump for the processing space. The heating gas exhaust passage 142 may, in some embodiments, be a groove formed along the edge of the upper module body 126, or may be formed through a separate component in fluid communication with the upper plenum 180.

[0017] The pyrometer passage 138 is disposed through the upper module body 126 such that a pyrometer 134, such as a scanning pyrometer, can measure the temperature of the substrate 150. The pyrometer 134 is disposed on the upper module body 126 adjacent to the pyrometer passage 138. The pyrometer passage 138 extends from the upper surface of the upper module body 126 to the bottom surface in the vicinity of the upper window 122.

[0018] The lower lamp module 104 is disposed below the susceptor assembly 124 and is configured to heat the bottom surface of the substrate 150 disposed on the susceptor assembly 124. The lower lamp module 104 includes a lower module body 182 and a plurality of lamp openings 186 disposed through the lower module body 182. A lamp 188 is disposed in each of the plurality of lamp openings 186. Each lamp 188 is disposed in a generally vertical orientation and is coupled to a lamp base 184. Each lamp base 184 supports one of the lamps 188 and electrically connects each lamp 188 to a power source (not shown). In this specification, the generally vertical orientation of the lamp 188 is described with respect to the substrate support surface of the susceptor 124. The generally vertical orientation is not necessarily generally perpendicular to the substrate support surface, but may also be at an angle of about 30 degrees to about 150 degrees with respect to the substrate support surface, for example, at an angle of about 45 degrees to about 135 degrees with respect to the substrate support surface, for example, at an angle of about 70 degrees to about 110 degrees with respect to the substrate support surface.

[0019] The lower lamp module 104 further includes a susceptor shaft passage 195 and a pyrometer passage 192. The support shaft 904 (FIG. 9) of the susceptor 124 is disposed through the susceptor shaft passage 195. The susceptor shaft passage 195 is disposed through the center of the lower module body 182. The susceptor shaft passage 195 is configured such that the support shaft 904 of the susceptor 124 and a part of the lower window 120 can pass through the lower module body 182.

[0020] The pyrometer passage 192 is disposed through the lower module body 182 so that a pyrometer 190 such as a scanning pyrometer can measure the temperature of the bottom surface of the substrate 150 or the bottom surface of the substrate support. The pyrometer 190 is disposed adjacent to the pyrometer passage 192 below the lower module body 182. The pyrometer passage 192 is disposed from the bottom surface of the lower module body 182 to the upper surface of the lower module body 182 in the vicinity of the lower window 120.

[0021] Continuing to refer to FIG. 1, the chamber body assembly 106 includes an injection ring 116 and a base ring 114. The injection ring 116 is disposed on top of the base ring 114. The injection ring 116 has one or more gas injectors 108 disposed therethrough. The base ring 114 includes a substrate transfer passage 162 disposed therethrough, one or more upper chamber exhaust passages 326 (FIG. 3C), and a lower chamber exhaust passage 164. The substrate transfer passage 162 is disposed opposite the one or more upper chamber exhaust passages 326 and the lower chamber exhaust passage 164. Each of the one or more upper chamber exhaust passages 326 is coupled to an exhaust module 165.

[0022] The upper chamber 111 is the portion of the processing space 110 where the substrate 150 is processed and process gas is injected. The lower chamber 113 is the portion of the processing space 110 where the substrate 150 is loaded onto the susceptor assembly 124. The upper chamber 111 can also be understood as the space above the susceptor of the susceptor assembly 124 while the susceptor assembly 124 is in the processing position. The lower chamber 113 is understood to be the space below the susceptor of the susceptor assembly 124 while the susceptor assembly 124 is in the processing position. The processing position (not shown) is the position where the substrate 150 is disposed on the same plane as or above the horizontal plane 125. The horizontal plane 125 is the plane where the injection ring 116 and the base ring 114 contact each other.

[0023] The one or more upper chamber exhaust passages 326 and the lower chamber exhaust passage 164 are coupled to one or more exhaust pumps (not shown). The one or more exhaust pumps are configured to remove exhaust gas from the processing space 110 via the one or more upper chamber exhaust passages 326 and the lower chamber exhaust passage 164. In some embodiments, each of the upper chamber exhaust passage 326 and the lower chamber exhaust passage 164 is coupled to a single exhaust pump using a plurality of conduits. In other embodiments, the upper chamber exhaust passage 326 is coupled to a different exhaust pump than the lower chamber exhaust passage 164.

[0024] The substrate transfer path 162 is formed to penetrate the base ring 114 and is configured to allow a substrate to pass therethrough from a transfer chamber of a cluster tool (not shown). In order to enable the processing chamber 100 to be attached to a cluster tool (not shown), a flange 168 is attached to one end of the base ring 114. The substrate transfer path 162 penetrates the flange 168.

[0025] The upper cooling ring 118 and the lower cooling ring 112 are disposed on both sides of the chamber body assembly 106. The upper cooling ring 118 is disposed above the injection ring 116 and is configured to cool the injection ring 116. The lower cooling ring 112 is disposed below the base ring 114 and is configured to cool the base ring 114. The upper cooling ring 118 has a coolant passage 146 disposed therein. The coolant circulating through the coolant passage 146 may include water or oil in some embodiments. The lower cooling ring 112 has a coolant passage 148 disposed therein. The coolant circulating through the coolant passage 148 is the same as the coolant circulating through the coolant passage 146 of the upper cooling ring 118. In some embodiments, the upper cooling ring 118 and the lower cooling ring 112 assist in fixing the injection ring 116 and the base ring 114 in place. The upper cooling ring 118 can partially support the upper lamp module 102, and the lower cooling ring 112 can partially support the base ring 114 and the injection ring 116.

[0026] By using the upper cooling ring 118 and the lower cooling ring 112, the temperatures of the injection ring 116 and the base ring 114 are reduced, and at this time, additional cooling channels arranged through the injection ring 116 and the base ring 114, such as those existing in conventional rings, are not required. As a result, the manufacturing costs of the injection ring 116 and the base ring 114, which are replaced more frequently than the upper cooling ring 118 and the lower cooling ring 112, are reduced. In some embodiments, the injection ring 116 may have additional coolant passages 421 (FIG. 4A) disposed therein.

[0027] One or more gas injectors 108 of the injection ring 116 are disposed through one or more openings inside the injection ring 116. In the embodiments described herein, a plurality of gas injectors 108 are disposed through the injection ring 116. One or more gas injectors 108 are configured to supply process gas to the processing space 110 via one or more gas outlets 178. One of the one or more gas injectors 108 is shown in FIG. 1. The gas injector 108 is shown as being arranged such that one or more gas outlets 178 point downward toward the susceptor 124 and the substrate 150. The downward angle of the gas injector 108 can be greater than about 5 degrees from horizontal, for example greater than about 10 degrees from horizontal. Each of the one or more gas outlets 178 is fluidly coupled to one or more process gas sources, such as a first process gas source 174 or a second process gas source 176. In some embodiments, only the first process gas source 174 is utilized. In embodiments where both the first process gas source 174 and the second process gas source 176 are utilized, two gas outlets 178 are present within each gas injector 108. The two gas outlets 178 are arranged in an overlapping configuration, and gas mixing is possible only after the gas enters the processing space 110. In some embodiments, the first process gas source 174 is a process gas and the second process gas source 176 is a cleaning gas. In other embodiments, both the first process gas source 174 and the second process gas source 176 are process gases.

[0028] The upper window 122 is disposed between the injection ring 116 and the upper lamp module 102. The upper window 122 is an optically transparent window, whereby the radiant energy generated by the upper lamp module 102 can pass therethrough. In some embodiments, the upper window 122 is formed of quartz or glass material. The upper window 122 has a dome shape and is depicted as an upper dome in some embodiments. The outer edge of the upper window 122 forms a peripheral support portion 172. The peripheral support portion 172 is thicker than the central portion of the upper window 122. The peripheral support portion 172 is disposed on the injection ring 116. The peripheral support portion 172 is connected to the central portion of the upper window 122 and is formed of the optically transparent material of the central portion of the upper window 122.

[0029] The lower window 120 is disposed between the base ring 114 and the lower lamp module 104. The lower window 120 is an optically transparent window, whereby the radiant energy generated by the lower lamp module 104 can pass therethrough. In some embodiments, the lower window 120 is formed of quartz or glass material. The lower window 120 has a dome shape and is depicted as a lower dome in some embodiments. The outer edge of the lower window 120 forms a peripheral support portion 170. The peripheral support portion 170 is thicker than the central portion of the lower window 120. The peripheral support portion 170 is connected to the central portion of the lower window 120 and is formed of the same optically transparent material.

[0030] Various liners and heaters are disposed inside the chamber body assembly 106 within the processing space 110. As shown in FIG. 1, an upper liner 156 and a lower liner 154 are disposed within the chamber body assembly 106. The upper liner 156 is disposed above the lower liner 154 and inside the injection ring 116. The lower liner 154 is disposed inside the base ring 114. The upper liner 156 and the lower liner 154 are configured to be coupled together while present within the processing space. The upper liner 156 and the lower liner 154 are configured to shield the inner surfaces of the injection ring 116 and the base ring 114 from the process gas within the processing space. The upper liner 156 and the lower liner 154 further serve to reduce heat loss from the processing space to the injection ring 116 and the base ring 114. When the heat loss is reduced, the heating uniformity of the substrate 150 is improved, enabling more uniform deposition on the substrate 150 during processing.

[0031] The upper heater 158 and the lower heater 152 are also disposed within the processing space 110 in the chamber body assembly 106. As shown in FIG. 1, the upper heater 158 is disposed between the upper liner 156 and the injection ring 116, and the lower heater 152 is disposed between the lower liner 154 and the base ring 114. Both the upper heater 158 and the lower heater 152 are disposed inside the chamber body assembly 106, enabling more uniform heating of the substrate 150 while the substrate 150 is within the processing chamber 100. The upper heater 158 and the lower heater 152 reduce heat loss to the walls of the chamber body assembly 106 and form a more uniform temperature distribution around the surfaces that form the processing space 110. Each of the upper liner 156, the lower liner 154, the upper heater 158, and the lower heater 152 is coupled to a flange 160 disposed within the processing space 110. The flange 160 is a horizontal surface configured to be fixed between a portion of the injection ring 116 and the base ring 114 to enable the fixing of each of the upper liner 156, the lower liner 154, the upper heater 158, and the lower heater 152. Both the upper heater 158 and the lower heater 152 can be configured such that a heated fluid passes therethrough or can be resistance heaters. The upper heater 158 and the lower heater 152 are further shaped to receive openings that penetrate the injection ring 116 and the base ring 114.

[0032] The susceptor assembly 124 is disposed within the processing space 110 and is configured to support the substrate 150 during processing. The susceptor assembly 124 includes a planar upper surface for supporting the substrate 150 and a shaft that extends through a portion of the lower window 120 and the lower lamp module 104. The susceptor assembly 124 is coupled to a movement assembly 194. The movement assembly 194 includes a rotation assembly 196 and a lift assembly 198. The rotation assembly 196 is configured to rotate the susceptor assembly 124 about a central axis A, and the lift assembly 198 is configured to linearly move the susceptor assembly 124 within the processing space 110 along the central axis A.

[0033] Figure 2A is a schematic cross-sectional perspective view of a chamber body assembly 106 according to an embodiment of the present disclosure. The chamber body 106 includes an injection ring 116 disposed on and coupled to a base ring 114. The injection ring 116 includes one or more gas injectors 108. The injection ring 116 includes an inner surface 404, and the base ring 114 includes an inner surface 304. The inner surface 304 of the base ring 114 and the inner surface 404 of the injection ring 116 are aligned with each other such that the inner surfaces 304, 404 have the same diameter for at least a portion of the outer periphery of the base ring 114 and the injection ring 116. The inner surface 304 of the base ring 114 and the inner surface 404 of the injection ring 116 form a central opening 201. The central opening 201 includes both an opening 310 of the base ring 114 and an opening 410 of the injection ring 116. The upper surface 312 of the base ring is in contact with the bottom surface 324 of the injection ring 116.

[0034] One or more gas injectors 108 are disposed on one side of the chamber body assembly 106, and one or more upper chamber exhaust passage openings 324 are disposed on the opposite side of the chamber body assembly 106. Each of the one or more upper chamber exhaust passage openings 324 is aligned with a recess 430 formed in the inner surface of the injection ring 116. By aligning each of the one or more recesses 430 with the upper chamber exhaust passage opening 324, the gas injected by the one or more gas injectors 108 can flow across the processing space 110 (FIG. 1) over the substrate 150 and then be removed from the processing space 110 through the upper chamber exhaust passage opening 324. The recess 430 assists in collecting the exhaust gas and directing the exhaust gas downward from a region at the same height as the injection ring 116 toward the upper chamber exhaust passage opening 324. When the exhaust gas enters the upper chamber exhaust passage opening 324, the exhaust gas flows through one or more upper chamber exhaust passages 326 and exits through the exhaust outlet 330.

[0035] The combination of the recess 430 and the upper chamber exhaust passage opening 324 reduces the complexity of manufacturing the base ring 114 and / or the injection ring 116. The combination of the recess 430 and the upper chamber exhaust passage opening 324 further enables the process gas to flow horizontally across the processing space 110 and remain in the upper chamber 111, without bypassing downward into the lower chamber 113, which can be a source of contamination.

[0036] FIG. 2B is a schematic cross-sectional view of the chamber body assembly 106 of FIG. 2A through another plane, according to an embodiment of the present disclosure. The cross-section shown in FIG. 2B shows the relationship between the lower chamber exhaust passage 164, and the orientation of the lower chamber exhaust passage 164, and at least one of the upper chamber exhaust passage opening 324, the recess 430, and the upper chamber exhaust passage 326. The recess 430, the upper chamber exhaust passage opening 324, and the upper chamber exhaust passage 326 are arranged at an angle with respect to the lower chamber exhaust passage 164, as will be described with reference to FIGS. 4D, 4E, and 5B. The recess 430 and the upper chamber exhaust passage opening 324 are additionally arranged above the lower chamber exhaust passage 164. The lower chamber exhaust passage 164 is configured to remove exhaust gas from the lower chamber 113, and the upper chamber exhaust passage opening 324 is configured to remove exhaust gas from the upper chamber 111.

[0037] FIG. 3A is a schematic cross-sectional view of the base ring 114. The base ring 114 includes a base ring body 302, and an opening 310 is disposed through the base ring body 302. The opening 310 forms at least a part of the processing space 110 of the entire processing chamber 100. The opening 310 is dimensioned to receive the substrate and the susceptor assembly 124 therein. The opening 310 is formed by the inner wall 304 of the base ring 114. The opening 310 extends from the upper surface 312 to the bottom surface 314 of the base ring 114.

[0038] The base ring body 302 is the body of the base ring 114 and is formed of a metallic material such as steel, aluminum, copper, nickel, or a metal alloy. In some embodiments, the base ring body 302 can be a silicon carbide material or a doped silicon carbide material.

[0039] As described above, the substrate transfer passage 162 is disposed opposite to one or more upper chamber exhaust passages 324 and the lower chamber exhaust passage 164. The substrate transfer passage 162 is disposed through the first side surface 306 of the base ring 114, and the one or more upper chamber exhaust passage openings 324 and the lower chamber exhaust passage 164 are formed through the second side surface 308 of the base ring 114. The first side surface 306 of the base ring 114 is disposed on one side of a plane C (FIG. 3C) disposed through the base ring 114, and the second side surface 308 of the base ring 114 is disposed on the opposite side of the plane C from the first side surface 306. The plane C passes through the central axis A and is perpendicular to the plane B. The plane C separates the substrate transfer passage 162 from the lower chamber exhaust passage 164 and the upper chamber exhaust passage openings 324. In the embodiments described herein, two upper chamber exhaust passage openings 324 are formed through the upper surface 312 of the base ring 114 (FIG. 3B). The two upper chamber exhaust passage openings 324 face the substrate transfer passage 162 but are offset from directly opposite the substrate transfer passage 162. The two upper chamber exhaust passage openings 324 are offset to prevent the gas from gathering inwardly when the gas flows across the processing space 110 from the gas injector 108 (FIG. 1). Instead, the gas flow remains more evenly distributed across the processing space, enabling more uniform deposition on the substrate 150. The two upper chamber exhaust passage openings 324 are disposed inside the seal groove 316.

[0040] The substrate transfer path 162 has a height H1 of about 7 mm to about 30 mm, for example about 10 mm to about 20 mm, so that the substrate 150 and a transfer arm (not shown) can be arranged therethrough. The substrate transfer path 162 further has a width W1 (FIG. 3C) of about 305 mm to about 350 mm, for example about 305 mm to about 315 mm. The width W1 enables the substrate 150 to be arranged thereon through the susceptor assembly 124.

[0041] Referring further to FIG. 1, the lower chamber exhaust passage 164 is arranged on the opposite side of the substrate transfer path 162 to fluidly connect the lower chamber exhaust passage 164 to an exhaust pump (not shown). The exhaust pump is also coupled to and can be in fluid communication with two upper chamber exhaust passage openings 324. In this specification, the lower chamber exhaust passage 164 is a cylindrical passage or an elliptical passage. The lower chamber exhaust passage 164 has a height H2 of about 0 mm to about 75 mm, for example about 25 mm to about 50 mm. The height H2 of the lower chamber exhaust passage 164 is configured such that an appropriate lower chamber gas flow can pass therethrough together with the lift arm assembly as shown in FIG. 10A.

[0042] Continuing to refer to FIG. 4C, a seal groove 316 is arranged on the upper surface 312 of the base ring body 302. The seal groove 316 surrounds the inner wall 304 and is configured to accommodate a seal ring such as an O-ring or other sealing gasket. The seal ring arranged in the seal groove 316 can be a polymer or plastic with a hardness higher than 50 durometers on the Shore A scale, for example higher than 60 durometers, for example higher than about 65 durometers. The seal groove 316 is dimensioned to accommodate a seal ring that forms a seal between the base ring 114 and the injection ring 116 as shown in FIG. 1. The seal groove 316 is arranged radially outside the upper chamber exhaust passage opening 324 to prevent the exhaust gas flowing through the upper chamber exhaust passage opening 324 from leaking out of the processing chamber 100.

[0043] The upper surface 312 optionally includes a support step portion 340. The support step portion 340 is a recess formed between the upper surface 312 and the inner wall 304. The support step portion 340 is configured to support the flange 160 (FIG. 1). The flange 160 is configured to be at least partially disposed within the support step portion 340 of the base ring 114 and the injection ring 116 to hold the flange 160 in a predetermined position.

[0044] The bottom surface 314 of the base ring body 302 includes a first seal groove 318 and a second seal groove 320. The first seal groove 318 and the second seal groove 320 are concentric and surround the inner wall 304 along the bottom surface 314. The first seal groove 318 is disposed further outward from the axis A than the second seal groove 320 such that the first seal groove 318 surrounds the second seal groove 320. Each of the first seal groove 318 and the second seal groove 320 is configured to accommodate a seal ring such as an O-ring or other sealing gasket. The seal rings disposed within the first seal groove 318 and the second seal groove 320 can be a polymer or plastic having a hardness higher than 50 durometers on the Shore A scale, for example higher than 60 durometers, for example higher than about 65 durometers. The first seal groove 318 and the second seal groove 320 are dimensioned to accommodate the seal rings and enable the formation of a seal between the base ring 114 and the peripheral support portion 170 of the lower window 120 as shown in FIG. 1.

[0045] Figure 3B is a schematic plan view of the base ring 114 of Figure 3A. As shown in Figure 3B, the upper surface 312 has one or more upper chamber exhaust passage openings 324 disposed therethrough. The one or more upper chamber exhaust passage openings 324 are disposed between the inner wall 304 and the seal groove 316. The one or more upper chamber exhaust passage openings 324 are in fluid communication with a portion of the upper liner 156 and the injection ring 116 to remove process gas from the upper portion of the processing space 110. Each of the one or more upper chamber exhaust passage openings 324 is in fluid communication with the exhaust module 165 via an upper chamber exhaust passage 326. The upper chamber exhaust passage 326 is a passage disposed through the base ring body 302 (Figure 3C). The upper chamber exhaust passage 326 fluidly couples one of the exhaust modules 165 to one of the upper chamber exhaust passage openings 324. As shown in Figure 3B, two exhaust modules 165 are attached to the second side surface 308 of the base ring body 302. Each of the two exhaust modules 165 is disposed on both sides of the lower chamber exhaust passage 164, whereby each of the exhaust modules 165 is disposed on both sides of and is mirror-imaged across the plane B. The plane B passes through the central axis A, the center of the substrate transfer passage 162, and the lower chamber exhaust passage 164 (Figure 3C). The plane B is a vertically oriented plane that divides the base ring 114 in half such that the base ring 114 is mirror-imaged across the plane B. The same plane B is utilized with reference to the injection ring as shown in Figure 4B.

[0046] Each of the one or more upper chamber exhaust passage openings 324 has a width W2 of from about 10 mm to about 220 mm, such as from about 20 mm to about 150 mm. By the respective width W2 of the one or more upper chamber exhaust passage openings 324, it is possible to remove exhaust gas from within the processing space 110 while reducing the turbulence of the gas flow within the processing space 110.

[0047] Each of the upper chamber exhaust passage openings 324 is disposed between a first exhaust angle α and a second exhaust angle β with respect to plane B. The first exhaust angle α is an angle of about 5 degrees to about 45 degrees with respect to plane B, for example an angle of about 10 degrees to about 30 degrees with respect to plane B, for example an angle of about 10 degrees to about 25 degrees with respect to plane B. The first exhaust angle α is large enough to prevent the upper chamber exhaust passage 326 from intersecting the lower chamber exhaust passage 164. The second exhaust angle β is an angle of about 30 degrees to about 70 degrees, for example an angle of about 35 degrees to about 65 degrees, for example an angle of about 45 degrees to about 60 degrees. The second exhaust angle β is large enough to capture the gas directed across the opening 310 by one or more gas injectors 108, wherein the gas path does not substantially bend inwardly towards plane B. The difference between the first exhaust angle α and the second exhaust angle β is about 25 degrees to about 60 degrees, for example about 30 degrees to about 50 degrees. The difference between the first exhaust angle α and the second exhaust angle β enables the upper chamber exhaust passage openings 324 to be disposed around the desired circumference of the opening 310, and the difference is the amount of the base ring 114 around which the upper chamber exhaust passage openings 324 extend.

[0048] FIG. 3C is a plan view of a schematic cross-section of the base ring 114 of FIG. 3A cut along the cutting line 3C-3C. As shown in FIG. 3C, each of the upper chamber exhaust passages 326 is fluidly coupled to an exhaust module passage 328 disposed through each of the exhaust modules 165. The exhaust module passage 328 is in fluid communication with the upper chamber exhaust passage opening 324 via the upper chamber exhaust passage 326. The exhaust module passage 328 narrows as the exhaust module passage 328 extends further from the base ring body 302, and finally, the exhaust module passage 328 leads to an exhaust outlet 330. The exhaust outlet 330 is an opening formed through the wall of the exhaust module passage 328 and is configured to be coupled to an exhaust conduit (not shown) for removing exhaust gas from the processing chamber 100. Similar to the upper chamber exhaust passage opening 324, the upper chamber exhaust passage 326 is disposed between a first exhaust angle α and a second exhaust angle β with respect to plane B.

[0049] Figure 4A is a schematic cross-sectional view of the injection ring 116 according to an embodiment of the present disclosure. The injection ring 116 is seated on the base ring 114 and is configured to supply process gas to the processing space 110. The injection ring 116 is a component separate from the base ring 114. The injection ring 116 is configured to inject gas across the surface of the substrate such that the main flow of gas through the processing space 110 is horizontal. The separable injection ring 116 enables easy replacement and maintenance of the injection ring 116 without replacing or removing the entire chamber body assembly 106. This reduces replacement costs and enables easier implementation of improvements in new gas injection in the processing chamber 100 while minimizing the impact on other chamber components.

[0050] The injection ring 116 includes an inner surface 404 and an outer surface 406. The inner surface 404 forms a ring around the opening 410 disposed within the injection ring 116. The opening 410 forms at least a portion of the processing space 110 of the processing chamber 100. One or more gas injectors 108 are disposed through the injection ring 116. The one or more gas injectors 108 extend from the injector support surface 414 through the injection ring body 402 to the inner surface 404. The one or more gas injectors 108 described herein are disposed through one or more injector passages 408. Each injector passage 408 is dimensioned to accommodate one of the one or more gas injectors 108, for example, one of the gas injectors 108. The injector passage 408 extends from the injector support surface 414 to the inner surface 404. As the injector passage 408 moves from the injector support surface 414 to the inner surface 404, the injector passage 408 extends downward. Extending downward is defined as being disposed such that as the injector passage 408 moves radially inwardly toward the inner surface 404, the injector passage 408 moves away from the upper surface 418 of the injection ring 116 and closer to the bottom surface 424 of the injection ring 116.

[0051] The inner surface 404 includes a groove 436 disposed around most of the outer periphery of the inner surface 404, and the groove 436 is disposed at a ratio greater than, for example, 50% of the outer periphery of the inner surface 404, for example greater than 60% of the outer periphery of the inner surface 404, for example greater than 70% of the outer periphery of the inner surface 404. The groove 436 is configured to accommodate a heating element such as the upper heating element 158. The groove 436 is shown in FIG. 4A as being formed as part of the inner surface 404 and the bottom surface 424 of the injection ring 116. Two recesses 430 are also disposed on the inner surface 404. The two recesses 430 are disposed opposite the injector passage 408. The recesses 430 are disposed within the range of the groove 436 and extend deeper into the injection ring body 402 than the groove 436, whereby the recesses 430 extend further away from the axis A than the groove 436.

[0052] The injector support surface 414, together with the outer step surface 416, is part of the outer surface 406 of the injection ring body 402. The injector support surface 414 is configured to hold one or more gas injectors 108 in place by providing a surface for fixing a portion of the one or more gas injectors 108. One or more gas outlets 178 are disposed through the inner surface 404 and are angled downwardly toward a substrate 150 disposed within the processing space 110 (FIG. 1).

[0053] The bottom surface 424 of the injection ring 116 is configured to contact the upper surface 312 of the base ring 114. The bottom surface 424 is a planar surface that extends between the outer surface 406 and the inner surface 404. The outer stepped surface 416 extends from the outermost portion of the outer surface 406 to the lower distal end of the injector support surface 414. The injector support surface 406 extends from the outer stepped surface 416 and is spaced from the bottom surface 424. The injector support surface 414 is disposed at an angle with respect to the bottom surface 424. The angle of the injector support surface 414 depends at least in part on the desired downward angle of the injector passage 408 and the one or more gas injectors 108. In the embodiments described herein, the angle of the injector support surface 414 with respect to the bottom surface 424 is greater than about 45 degrees, such as from about 45 degrees to about 85 degrees, such as from about 60 degrees to about 80 degrees, such as from about 70 degrees to about 80 degrees. The injector support surface 414 extends radially inwardly from the outer stepped surface 416, such that the distal end of the injector support surface 414 that is furthest from the outer stepped surface 416 is closer to the inner surface 404.

[0054] The upper surface 418 of the injection ring 116 extends radially inwardly from the upper distal end of the injector support surface 414. The upper surface 418 is a horizontal surface, whereby the upper surface 418 extends parallel to the bottom surface 424. The distal end of the upper surface 418 opposite the injector support surface 414 is connected to the window support groove 412. The window support groove 412 is a channel disposed along the upper surface of the injection ring 116. The window support groove 412 is configured to receive the peripheral support portion 172 of the upper window 122 therein. The window support groove 412 includes a first window seal groove 420 and a second window seal groove 422. Each of the first seal window groove 420 and the second seal window groove 422 is configured to receive a seal ring such as an O-ring or other sealing gasket. The seal rings disposed within the first window seal groove 420 and the second window seal groove 422 can be a polymer or plastic having a hardness higher than 50 durometers on the Shore A scale, for example higher than 60 durometers, for example higher than about 65 durometers. The first window seal groove 420 and the second window seal groove 422 are dimensioned to receive the seal rings and are capable of forming a seal between the injection ring 116 and the upper window 122 as shown in FIG. 1.

[0055] The inner portion of the window support groove 412 is formed by an angled protrusion 411. The angled protrusion 411 is disposed inwardly of the first window seal groove 420 and the second window seal groove 422. The angled protrusion 411 extends upward from the window support groove 412 so as to be away from the bottom surface 408. The angled protrusion 411 forms a portion of the window support groove 412 disposed at the innermost side of the angled protrusion 411 and a portion of the inner surface 404 disposed at the outermost side of the angled protrusion 411. The angled protrusion 411 extends radially inward while extending upward from the window support groove 412. The angled protrusion 411 shields a part of the upper window 122, such as the peripheral support portion 172, from the processing space 110 (FIG. 1). By shielding the peripheral support portion 172 from the processing space 110, the heating load on the peripheral support portion 172 and the seals within the first window seal groove 420 and the second window seal groove 422 is reduced. In addition, the angled protrusion 411 protects the seal ring disposed within the support groove 412 from being directly exposed to radiant energy or process gas, and thus improves the lift (lifting force) and reliability of the seal ring.

[0056] The coolant passage 421 is optionally disposed through the injection ring body 402. The coolant passage 421 is configured to receive a coolant fluid such as water or oil. The coolant passage 421 is a partial ring disposed through the injection ring body 402 and assists in temperature control of both the injection ring 116 and the base ring 114.

[0057] FIG. 4B is a schematic plan view of the injection ring 116 of FIG. 4A having a plurality of gas injectors 108. In FIG. 4B, five gas injectors 108 are shown. Other quantities of gas injectors 108 are also contemplated, for example, three or more gas injectors 108, four or more gas injectors 108, five or more gas injectors 108, or six or more gas injectors 108 are also contemplated. The number of gas injectors 108 determines the number of zones for injecting process gas into the processing space 110 (FIG. 1). Each gas injector 108 has a gas outlet oriented toward the central portion of the injection ring 116, such as central axis A. The gas injectors 108 are arranged on one side of the injection ring 116 to enable crossflow across the substrate within the processing chamber 100. The group of gas injectors 108 is arranged centered on plane B. Plane B is the same plane as plane B passing through the base ring 114. Plane B is arranged through the central axis A and is orthogonal to plane D. Inside each gas injector 108, a plurality of individual process gas passages (FIGS. 5A-6B) may be arranged. In an embodiment where five gas injectors 108 are utilized, the central gas injector 432a forms an inner gas injection zone, the two outermost gas injectors 432c form outer gas injection zones, and the two intermediate gas injectors 432b between the central gas injector 432a and the outermost gas injector 432c form intermediate gas injection zones. Plane B is arranged through the central gas injector 432a. The two intermediate gas injectors 432b are mirror images across plane B. Similarly, the two outermost gas injectors 432c are mirror images across plane B. Each injector passage 408 passes through which the gas injector 108 is arranged. The number of injector passages 408 is equal to the number of injectors 108.

[0058] Each injector passage 408 has an injector passage width W3. The injector passage widths W3 of each injector passage 408 are shown to be the same. In an alternative embodiment, the injector passage width W3 varies as the injector passage 408 extends outwardly from the central gas injector 432a to the outermost gas injector 432c. In some embodiments, the injector passage width W3 of the injector passage 408 in which the outermost gas injector 432c extends is larger than the injector passage width W3 of the injector passage 408 in which the intermediate gas injector 432b extends. The injector passage 408 in which the intermediate gas injector 432b extends has an injector passage width W3 that is larger than the injector passage width W3 of the injector passage 408 in which the central gas injector 432a extends.

[0059] Alternatively, the injector passage width W3 decreases as the injector passage 408 extends outwardly from the injector passage 408 in which the central gas injector 432a is disposed. In this embodiment, the injector passage width W3 of the injector passage 408 in which the outermost gas injector 432c extends is smaller than the injector passage width W3 of the injector passage 408 in which the intermediate gas injector 432b extends. The injector passage width W3 of the injector passage 408 in which the intermediate gas injector 432b extends is smaller than the injector passage width W3 of the injector passage 408 in which the central gas injector 432a extends.

[0060] Each of the injector passages 408 is arranged at an injector angle γ with respect to plane B. The injector angle γ is obtained with respect to plane B, while on the opposite side of plane D, it is obtained with respect to the first exhaust angle α and the second exhaust angle β. The injector angle γ is less than about 90 degrees, for example less than about 70 degrees, for example less than about 65 degrees, for example less than about 60 degrees from plane B. The injector angle γ is configured to be within a range of 10 degrees from the second exhaust angle β, whereby the difference between the injector angle γ and the second exhaust angle β is from about -10 degrees to about 10 degrees, for example, from about -5 degrees to about 5 degrees, for example about 0 degrees. The injector angle γ and the second exhaust angle β are similar in that they reduce the deflection of the gas injected into the processing space 110 by the gas injector 108 while the gas is being discharged. Gas deflection may cause non-uniformity during film deposition.

[0061] The injection ring 116 includes recesses 430 in the inner surface 404 facing the injector passages 408. The recesses 430 correspond to one or more upper chamber exhaust passage openings 324 (FIG. 3B). The recesses 430 are disposed above one or more upper chamber exhaust passage openings 324, whereby the recesses 430 function as a first portion of one or more upper chamber exhaust passages 326 of the base ring 114 (FIG. 4A). In the embodiments described herein, there are two recesses 430 corresponding to two upper chamber exhaust passages 326. The two recesses 430 are disposed on the opposite side of the opening 410 from the injector passages 408. The two recesses 430 are disposed on one side of plane D passing through the injection ring 116, and the injector passages 408 are disposed on the opposite side of plane D. The two recesses 430 are offset from the center of the injection ring 116 on the opposite side of the injector passage 408 where the central gas injector 432a is disposed. Neither of the recesses 430 is disposed through plane B. The recesses 430 are mirror images across plane B. As described above, by offsetting the two recesses 430, when the gas flows from the gas injector 108 (FIG. 1) across the processing space 110 to the upper chamber exhaust passage 326, the gas is prevented from gathering inward.

[0062] In this specification, the recess 430 has the same size and shape as one or more upper chamber exhaust passage openings 324. Each of the recesses 430 has a width W4 of from about 0 mm to about 220 mm, for example from about 10 mm to about 150 mm. The width W4 corresponds to the width W2 (FIG. 3B) of the upper chamber exhaust passage opening 324. The width W4 is configured to reduce the turbulence of the gas flow within the processing space 110 and enable a mainly laminar gas flow and a uniform deposition onto the substrate 150. Similar to the upper chamber exhaust passage opening 324, the recess 430 is disposed between a first exhaust angle α and a second exhaust angle β with respect to the plane B.

[0063] The injection ring body 402 forms the injection ring 116 and is made of a metallic material such as steel, aluminum, copper, nickel, or a metal alloy. In some embodiments, the injection ring body 402 can be made from a silicon carbide material or a doped silicon carbide material.

[0064] FIG. 5A is a schematic isometric view of a gas injector 108 according to an embodiment of the present disclosure. The gas injector 108 includes an injector base 502 and an injector insert 500. The injector insert 500 is connected to the injector base 502 and is configured to be fitted into one of the injector passages 408 (FIG. 4A). The injector base 502 is placed on the injector support surface 414 and is configured to fix the injector insert 500 at a fixed position within the range of one of the injector passages 408 of the injector passages 408. The gas injector 108 is configured to form a plurality of gas paths within the injector 108 and provide a sheet of gas exiting from a gas outlet 178 disposed at the distal end of the injector insert 500 opposite the injector base 502.

[0065] Both the injector insertion part 500 and the injector base 502 are formed of materials that are less reactive to process gases, have high durability, and have high thermal conductivity. Materials suitable for forming the injector base 502 and the injector insertion part 500 include silicon carbide, nickel, stainless steel, aluminum, and quartz.

[0066] The injector insertion part 500 extends from the back surface 506 of the injector base 502. The back surface 506 functions as an attachment surface for fixing the gas injector 108 to the injector support surface 414. The back surface 506 is a planar surface disposed around the base 501 of the injector insertion part 500. The injector insertion part 500 has an outer surface 504 and an injection surface 510. The gas outlet 178 is disposed through the injection surface 510. The injection surface 510 is disposed at the distal end of the injector insertion part 500 opposite the base 501 and the injector base 502. The outer surface 504 of the injector insertion part 500 is configured to fit inside one of the injector passages 408. The cross-sections of the outer surface 504 and the injection surface 510 of the injector insertion part 500 are in a stadium shape or an obround shape. In some embodiments, the cross-sections of the outer surface 504 and the injection surface 510 are quadrilaterals such as an ellipse, a rectangle, a parallelogram, or a trapezoid. Other cross-sections of the outer surface 504 and the injection surface 510 with different shapes are also envisioned and may be effective.

[0067] The gas outlet 178 of the injector insertion part 500 is formed from an outlet opening 508. The outlet opening 508 is disposed through the outer surface 504 of the injector insertion part 500. The outlet opening 508 is shaped to distribute the gas driven through the outlet opening 508 and form a spread of the gas directed across the upper surface of the substrate 150.

[0068] FIG. 5B is a schematic cross-sectional view of the gas injector 108 of FIG. 5A taken along the cutting line 5B-5B, according to an embodiment of the present disclosure. The injector body 502 includes a front surface 512. The front surface 512 is a side surface of the injector body 502 opposite to the back surface 506. The front surface 512 is configured to receive one or more gas connections and one or more electrical connections. The one or more gas connections can be either the first process gas supply source 174 and / or the second process gas supply source 176. Although not shown, the one or more electrical connections can be configured to supply power to a heater disposed within the gas injector 108.

[0069] A gas introduction passage 514 is disposed through the front surface 512. The gas introduction passage 514 is a single gas passage and is configured to transfer process gas from a gas line connected to the front surface 512 to a diffusion passage 516 disposed within the range of the injector insertion portion 500. The diffusion passage 516 divides the gas flow from the gas introduction passage 514 into a plurality of gas flows. The diffusion of the gas into the plurality of gas flows can be gradual or sudden. In some embodiments, a single gas introduction passage 514 is divided into three or more passages simultaneously. In other embodiments, a single gas introduction passage 514 is divided into two gas passages, the two gas passages are divided into four gas passages, and the four gas passages are divided into eight gas passages (FIG. 5C).

[0070] Accordingly, the diffusion passage 516 is a gas distribution network or a gas distribution tree of the gas passage. As shown in FIG. 5C, by gradually dividing the gas in the diffusion passage 516, it becomes possible to make the pressure of the gas in each gas passage uniform across the flow direction. Accordingly, the uniformity of gas dispersion in the diffusion passage 516 over the plurality of individual paths 552a - h (FIG. 5C) is improved. Various configurations of the diffusion passage 516 are utilized to vary the gas dispersion over each path 552a - h. In the example shown in FIG. 5C, the diffusion passage 516 includes a first branch 540 that extends from the gas introduction passage to two arms of the diffusion passage 516. After the diffusion passage 516 is divided into two arms at the first branch 540, each of the two arms is further divided into two arms at two second branches 542a, 542b. After being divided at the two second branches 542a, 542b, there are a total of four arms extending towards the outlet opening 508. Thereafter, each of the four arms is further divided into two arms at four third branches 550a, 550b, 550c, 550d. After being divided at the four third branches 550a, 550b, 550c, 550d, there are a total of eight arms extending towards the outlet opening 508. In some embodiments, each of the first branch 540, the second branches 542a, 542b, or the third branches 550a, 550b, 550c, 550d may alternatively be divided into three or four additional arms instead of two additional arms. In yet another embodiment, one of the second branches 542a, 542b, or the third branches 550a, 550b, 550c, 550d may not be utilized, and only two sets of branches or one set of branches may exist.

[0071] Individual paths 552a - h can be configured to provide a gas flow passing through some of the paths 552a - h to be larger than that for the other paths 552a - h. The size of the injector insertion part 500 and the number of the individual gas paths 552a - h are also adjusted for various configurations of the injector insertion part 500 and different processes. There are 4 to 16 paths formed by the diffusion passage 516, for example, 4 to 12 paths, for example, 6 to 10 paths, for example, 8 paths. The cross-sectional size of each path 552a - h in the diffusion passage 516 is selected according to the desired flow rate, flow velocity, flow pressure, and / or the type of gas desired for a given process.

[0072] The use of the gas injector 108 is beneficial in that it can quickly and inexpensively test the design of a new injection passage in the processing chamber while minimizing downtime and significantly reducing production costs. The design of the new injection passage can be tested by replacing one or more gas injectors 108, without disassembling or replacing other components in the processing chamber 100, such as the injection ring 116 or the base ring 114. Thus, the gas injector 108 enables rapid adaptation of the design of the new diffusion passage 516 and the injector insertion part 500. Various gas injectors 108 can also be utilized to distribute process gas to various parts of the substrate 150. The overall length of the gas injector can be about 75 mm to about 150 mm, for example, about 80 mm to about 120 mm, for example, about 100 mm. Various lengths of the gas injector 108 are utilized for various reasons to bias the gas supply to the edge of the substrate relative to the gas supply to the center of the substrate.

[0073] Each path 552a - h of the diffusion path 516 communicates with the first plenum 518. The first plenum 518 is a space located at the distal end of the diffusion path 516 on the opposite side from the introduction path 514. The first plenum 518 is a single space at the distal ends of each path 552a - h of the diffusion path 516. The first plenum 518 enables at least partially uniformizing the pressure and flow velocity among the gas flows moving through one of the individual paths 552a - h. By making the pressure in the first plenum 518 uniform, it becomes possible to at least partially uniformize the flow rate among each path 551a - h. Since back pressure is generated within the first plenum 518, the gases in the gas flow are mixed. The first plenum 518 is configured to partially uniformize the pressure between each of the individual paths 552a - h. The diffusion amount of the gas flow within the first plenum 518 is controlled by the length L1 of the first plenum 518 between the distal end of the diffusion path 516 and the distal end of the fin array 520 closest to the diffusion path 516. The first plenum 518 has a length L1 of about 3 mm to about 12 mm, for example, about 3 mm to about 10 mm.

[0074] The fin array 520 includes a plurality of fins 521 disposed between the bottom surface 503 and the top surface 505 of the injector insertion portion 500. The plurality of fins 521 are dispersed so as to form a plurality of path extension portions 534. The path extension portions 534 are formed between the inner wall of the injector insertion portion 500 and one of the fins 521, or between two adjacent fins 521. In the embodiments described herein, there are 3 to 14 fins 521, for example 4 to 12 fins 521, for example 6 to 8 fins 521. The fins form the path extension portions 534 such that there are 4 to 16 path extension portions 534, for example 6 to 12 path extension portions 534, for example 8 path extension portions 534. In the embodiments described herein, there are the same number of path extension portions 534 as the paths 552a - h, whereby the gas flow is not interrupted and continues after passing through the first plenum 518. Each fin 521 within the fin array 520 is individually oriented in a different direction. In the example shown in FIG. 5C, the fins 521 are arranged in a fan shape and are oriented such that the angle increases from the center line E of the injection ring 116. Each fin 521 disposed farther away from the center line E is oriented at a larger angle with respect to the center line E (FIG. 5C). The fins on the center line E are linearly aligned with the center line E.

[0075] The fin array 520 is disposed over the length L2 of the injector insertion portion 500. The length L2 of the fin array 520 helps in determining the flow vector and dispersion of each gas flow. The longer the length L2, the lower the velocity of the gas flow and the higher the back pressure within the first plenum 518. With a reduced length L2, proper back pressure accumulation or gas mixing is not possible. The length L2 of the fin array 520 is from about 15 mm to about 50 mm, for example from about 20 mm to about 40 mm. In some embodiments, the length L2 is about 25% to about 50% of the overall width W5 of the injector insertion portion 500.

[0076] Immediately downstream of the fin array 520, there is a second plenum 522. The second plenum 522 is a space located at the distal end of the fin array 520 on the side opposite to the first plenum 520. The second plenum 522 is a single space at the distal end of each path extension 534 of the fin array 520. The second plenum 522 makes it possible to at least partially equalize the pressure and flow rate between the gas flows moving through one of the individual path extensions 534. By equalizing the pressure within the second plenum 522, it becomes possible to at least partially equalize the flow rate between each path extension 534. Backpressure is generated within the second plenum 522 and the gases in the gas flow are mixed. The second plenum 522 is configured to partially equalize the pressure between each of the path extensions 534. The amount of diffusion of the gas flow within the second plenum 522 and the accumulation of backpressure are partially controlled by the length L3 of the second plenum 522 between the distal end of the fin array 520 and the distal end of the baffle array 524 closest to the second plenum 522. The second plenum 522 has a length L3 of about 3 mm to about 12 mm, for example about 3 mm to about 10 mm.

[0077] The baffle array 524 is formed from a plurality of baffles 535 (FIG. 5C). The baffles 535 of the baffle array 524 form a plurality of passage outlets 536. The passage outlets 535 are additional extensions of each path 552a - h and the path extensions 534. The passage outlets 535 are narrow passages in the vicinity of the second plenum 522 and widen as the passage outlets 535 move away from the second plenum 522 and towards the third plenum 526. The plurality of baffles 535 are shaped such that the width of the surface in the vicinity of the second plenum 522 is wider in the gas flow direction than the surface in the vicinity of the third plenum 526. In some embodiments, each baffle 535 has a trapezoidal shape such as an isosceles trapezoid. Other shapes of the baffle 535 are also envisioned. In the embodiments described herein, there are 3 to 14 baffles 535, for example 4 to 12 baffles, for example 5 to 10 baffles, for example 6 to 8 baffles within the baffle array 524.

[0078] The shape and orientation of each baffle 535 helps to equalize the pressure between the respective gas flows passing through the second plenum 522 by generating backpressure within the second plenum 522. The backpressure within the second plenum 522 slows down the gas flow passing through the injector insertion portion 500 and helps to generate a uniform gas flow through the path outlet 536. The widening of the width of each path outlet 536 promotes the expansion of each gas flow filling the third plenum 536. Accordingly, the baffle array 524 helps to form a curtain of process gas disposed across the width of the third plenum 526. The curtain of process gas is configured to be a substantially uniform curtain such that the flow rate and concentration of the process gas are the same across the entire width of the third plenum 526.

[0079] The baffle array 524 is disposed along the length L4 of the injector insertion portion 500. The length L4 of the baffle array 524 helps to determine the expansion rate of the gas flow, the backpressure within the second plenum 522, and the rate of gas mixing. The length L4 of the baffle array 524 is about 25% to about 50% of the length L2 of the fin array 520, for example about 30% to about 40% of the length L2, for example about 30% to about 35% of the length L2.

[0080] The third plenum 526 is disposed between the baffle array 524 and the outlet opening 508. The third plenum 526 is an empty region formed within the wall of the injector insertion portion 500. The third plenum 526 is configured to allow the gas flows exiting the baffle array 524 to mix and merge into a continuous spread of process gas. The sheet of process gas then exits through the outlet opening 508 and is discharged into the processing space 110.

[0081] FIG. 5C is a plan view with a schematic cross section taken along cutting line 5C-5C of the gas injector 108 of FIG. 5A according to an embodiment of the present disclosure. FIG. 5C more clearly shows the distribution system 515 through the injector insertion portion 500 described above. The distribution system 515 includes a gas introduction passage 514, a diffusion passage, a first plenum 518, a fin array 520, a second plenum 522, a baffle array 524, a third plenum 536, and passages formed therefrom.

[0082] One or more heating elements 530 are disposed on both sides of the injector insertion portion 500. The heating element 530 is disposed around the diffusion passage 516 through at least a portion of the injector insertion portion 500. The heating element 530 described herein is inserted into the injector insertion portion 500 through one or more openings 528 disposed through the front surface 512 of the injector base 502. The heating element 530 can be either a resistive heating element or a radiant heating element. The heating element 530 shown in FIG. 5C is a cartridge heater and is disposed within a heater cavity 531. In the embodiments of FIGS. 5A-5C, there are two heater cavities 531, and one heating element 530 is disposed within each heater cavity 531.

[0083] Heating elements 530 disposed within each gas injector 108 allow for pre-heating of the gas mixture or process gas flowing into the processing space 110 (FIG. 1). Gas injectors 108 that are heated separately from other components of the processing chamber 100, such as the injection ring 116 and base body 114, allow for more controlled heating of the gases flowing through the gas injector 108. The gases can be heated to the desired process temperature just prior to entering the processing space using the heating elements 530 described herein. Heating the gas injectors 108 is generally utilized when flowing stable or non-reactive precursors, such as dichlorosilane or trichlorosilane, through the gas injectors 108. The heating elements 530 are configured to heat the gas injectors 108 and the gases flowing through the gas injectors 108 to a temperature less than about 400° C., such as between about 100° C. and about 400° C., such as between about 150° C. and about 300° C., such as between about 200° C. and about 300° C. Independent heating of each gas injector 108 further allows for control of the process gases flowing through each individual gas injector 108, such that the process gases flowing through one or more gas injectors 108 are heated to a different temperature than the process gases flowing through other gas injectors 108. The heating elements 530 allow for preheating of the gases before flowing over the substrate without consumption of the unfinished gas.

[0084] 5D is a schematic side view of the gas injector 108 of FIG. 5A from a first side, according to an embodiment of the present disclosure. The gas injector 108 is shown facing the front surface 512 of the injector base 502. Disposed through the front surface 512 are a gas introduction passage 514, one or more openings 528 for a heating element 530, and one or more mounting fasteners 507. The gas introduction passage 514 is disposed between the openings 528 such that the gas introduction passage 514 is centered between the openings 528. Two openings 528 are shown, with a heating element 530 disposed within each opening 528. The openings 528 and the gas introduction passages 514 are disposed inwardly from the outer surface 504 of the injector insert 500.

[0085] One or more attachment fasteners 507 are used to attach the gas injector 108 to the injection ring 116 and hold the gas injector 108 in place. The one or more attachment fasteners 507 can include hooks, clasps, fixing pins, latches, screws, or bolts. Other types of fasteners are also envisioned. The one or more attachment fasteners 507 are disposed through the injector body 502. The one or more attachment fasteners 507 are disposed through at least the front face 512. The one or more attachment fasteners 507 shown herein are two attachment fasteners 507. The two attachment fasteners 507 are disposed on both sides of the injector body 502 and on both sides of the gas introduction passage 514. The two attachment fasteners 507 are disposed outside of the opening 528 disposed through the injector body 502.

[0086] In some embodiments, a heating element 530 or an attachment fastener 507 is additionally utilized. The opening 528 disposed through the front face 512 enables the heating element 530 to be individually connected to a power source (not shown). The gas introduction passage 514 enables a gas source, such as a first process gas supply source 174 or a second process gas supply source 176, to be fluidly coupled to the diffusion passage 516 to supply process gas.

[0087] FIG. 5E is a schematic side view from a second side of the gas injector 108 of FIG. 5A, according to an embodiment of the present disclosure. The gas injector 108 is shown facing the injection surface 510 of the injector insertion portion 500. As shown, the outlet opening 508 is disposed within the injection surface 510. One or more attachment fasteners 507 are further disposed through the injector body 502.

[0088] The height H3 of the injection surface 510, and thus the height of the injector insertion portion 500, is from about 5 mm to about 12 mm, for example from about 6 mm to about 11 mm, for example from about 7 mm to about 10 mm. The height H3 is the same as the height of the injector passage 408, enabling the injector insertion portion 500 to be inserted into the injector passage 408. The width W5 of the injection surface 510, and thus the width of the injector insertion portion 500, is from about 50 mm to about 100 mm, for example from about 60 mm to about 90 mm, for example from about 70 mm to about 90 mm. The width W5 is the same as the width of the injector passage 408, enabling the injector insertion portion 500 to be inserted into the injector passage 408. Further, the width W5 determines the number of gas injectors 108 utilized within the processing chamber 100. The ratio of the height H3 to the width W5 of the injection surface 500 is from about 1:15 to about 1:5, for example from about 1:12 to about 1:8, for example about 1:10. The ratio of the height H3 to the width W5 aids in forming a uniform spread of gas exiting the injector insertion portion 500.

[0089] The outlet opening 508 of the gas injector 108 includes a width W6 of from about 50 mm to about 100 mm, for example from about 70 mm to about 90 mm. The width W6 of the outlet opening 508 is configured to control the distribution of gas from a single gas injector 108. The width W6 can be wider when fewer gas injectors 108 are used and narrower when more gas injectors 108 are used. The height H4 of the outlet opening 508 is from about 2 mm to about 8 mm, for example from about 3 mm to about 7 mm, for example from about 3 mm to about 6 mm. The height H4 of the outlet opening 508 is equal to the height of the remainder of the distribution system 515. In some embodiments, the height H4 varies through the distribution system 515.

[0090] FIG. 6A is a schematic isometric view of a gas injector 108 according to another embodiment, according to a second embodiment of the present disclosure. The gas injector 108 of FIGS. 6A-6B is similar to the gas injector 108, but the injector insertion portion 500 is replaced by a multi-layer injector insertion portion 600. The multi-layer injector insertion portion 600 is similar to the injector insertion portion 500 of FIGS. 5A-5C, but has a two-layer gas flow, and a first sheet of gas flow is disposed below a second sheet of gas flow. The injector insertion portion 600 includes two distribution systems 515, whereby the first distribution system 515 is superimposed on the second distribution system 515 as described herein.

[0091] The gas injector 108 of FIGS. 6A-6B includes an injector body 502 and a multi-layer injector insertion portion 600. The multi-layer injector insertion portion 600 is connected to the injector body 502 and is configured to be fitted into one of the injector passages 408 (FIG. 4A) in the same manner as the injector insertion portion 500 of FIGS. 5A-5C. Each gas injector 108 having the injector insertion portion 600 includes a first outlet opening 608a and a second outlet opening 608b in the gas outlet 178, whereby there are two separate gas outlets disposed at the distal end of the multi-layer injector insertion portion 600 opposite the injector body 502. Separate process gases are supplied to each of the first outlet opening 608a and the second outlet opening 608b from separate process gas supply sources such as a first process gas supply source 174 and a second process gas supply source 176.

[0092] Both the multi-layer injector insertion portion 600 and the injector body 502 are formed of a material that is less reactive to process gases, has high durability, and has high thermal conductivity. Materials suitable for forming the injector body 502 and the multi-layer injector insertion portion 600 include silicon carbide, nickel, stainless steel, aluminum, and quartz.

[0093] The multi-layer injector insertion part 600 extends from the back surface 506 of the injector base body 502. The multi-layer injector insertion part 600 has an outer surface 604 and an injection surface 610. The gas outlet 178 is disposed through the injection surface 610. The injection surface 610 is disposed at the distal end of the multi-layer injector insertion part 600 opposite to the base 601 of the multi-layer injector insertion part 600 and the injector base 502. The outer surface 604 of the multi-layer injector insertion part 600 is configured to fit inside one of the injector passages 408. The cross-sections of the outer surface 604 and the injection surface 610 of the multi-layer injector insertion part 600 are in a stadium shape or an obround shape. In some embodiments, the cross-sections of the outer surface 604 and the injection surface 610 are quadrilaterals such as an ellipse, a rectangle, a parallelogram, or a trapezoid. Other cross-sections of the outer surface 604 and the injection surface 610 with other shapes are also envisioned and may be effective. The multi-layer injector insertion part 600 includes an upper surface 605 and a bottom surface 603 of the outer surface 604. The upper surface 605 and the bottom surface 603 are similar to the upper surface 505 and the bottom surface 503.

[0094] The gas outlet 178 of the injector insertion part 600 includes a first outlet opening 608a and a second outlet opening 608b. The first outlet opening 608a and the second outlet opening 608b are disposed through the outer surface 604 of the multi-layer injector insertion part 600. Each of the first outlet opening 608a and the second outlet opening 608b is shaped to distribute the gas driven therethrough to form two sheets of gas spreading over the surface of the substrate. In the embodiments of FIGS. 6A-6B, the first outlet opening 608a is disposed below the second outlet opening 608b. The first outlet opening 608a is disposed parallel to the second outlet opening 608b. Each of the first outlet opening 608a and the second outlet opening 608b is configured to provide a separate gas curtain or gas spread.

[0095] Each individual gas sheet is discharged parallel to each other and mixed only after entering the processing space 110 (FIG. 1). The paths of each gas sheet are separated while flowing through the injector insertion portion 600. In some embodiments, one or both of the first outlet opening 608a and the second outlet opening 608b are arranged to direct the gas exiting the first outlet opening 608a or the second outlet opening 608b toward the gas flow exiting the opposing outlet openings 608a, 608b. This can improve the gas mixing between the two curtains of process gas exiting the outlet openings 608a, 608b.

[0096] FIG. 6B is a schematic cross-sectional view of the gas injector 108 of FIG. 6A through another plane according to an embodiment of the present disclosure. In the embodiments described herein, there are a first gas introduction passage 614a and a second gas introduction passage 614b. One or more gas connections coupled to the first gas introduction passage 614a and the second gas introduction passage 614b can be either the first process gas supply source 174 or the second process gas supply source 176. In some embodiments, the first gas introduction passage 614a is coupled to the first process gas supply source 174, and the second gas introduction passage 614b is coupled to the second process gas supply source 176. Both the first gas introduction passage 614a and the second gas introduction passage 614b are similar to the gas introduction passage 514 of FIGS. 5B and 5C.

[0097] Each of the first gas introduction passage 614a and the second gas introduction passage 614b is a separate and distinct gas passage. The first gas introduction passage 614a is a single gas passage that transfers process gas from a gas line connected to the front surface 512. The second gas introduction passage 614b is similar to the first gas introduction passage 614a and is a single gas passage that transfers a second process gas from a second line connected to the front surface 512. The first gas introduction passage 614a is configured to be in fluid communication with the first diffusion passage 616a. The second gas introduction passage 614b is in fluid communication with a second diffusion passage 616b disposed within the multilayer injector insert 600. Both the first diffusion passage 616a and the second diffusion passage 616b are similar to the diffusion passage 516 of FIG. 5C. The first diffusion passage 616a and the second diffusion passage 616b can have different patterns in some embodiments, whereby the pattern of the first diffusion passage 616a is different from the pattern of the second diffusion passage 616b. The first diffusion passage 616a is disposed below the second diffusion passage 616b.

[0098] There are 4 to 16 paths formed by each of the first diffusion passage 616a and the second diffusion passage 616b, for example 4 to 12 paths, for example 6 to 10 paths, for example 8 paths.

[0099] Each path of the first diffusion passage 616a communicates with the first lower plenum 618a. Each path of the second diffusion passage 616b communicates with the first upper plenum 618b. The first lower plenum 618a and the first lower plenum 618b are two separate spaces, and are respectively arranged at the distal ends of the first diffusion passage 616a and the second diffusion passage 616b. The first lower plenum 618a and the first upper plenum 618b are similar to the first plenum 518 in FIGS. 5B and 5C. The lower fin array 620a is arranged at the distal end of the first lower plenum 618a on the side opposite to the first lower plenum 618a from the first diffusion passage 616a. The upper fin array 620b is arranged at the distal end of the first upper plenum 618b. Each of the lower fin array 620a and the upper fin array 620b is similar to the fin array 520 in FIGS. 5B and 5C, and each includes a plurality of fins.

[0100] Immediately downstream of the lower fin array 620a, there is a second lower plenum 622a. Immediately downstream of the upper fin array 620b, there is a second upper plenum 622b. The second lower plenum 622a and the second upper plenum 622b are respectively spaces arranged at the distal ends of the lower fin array 620a and the upper fin array 620b. The second lower plenum 622a and the second upper plenum 622b are similar to the second plenum 522 in FIGS. 5B and 5C.

[0101] The lower baffle array 624a and the upper baffle array 624b are formed from a plurality of baffles similar to the baffle 535 of FIG. 5C. The lower baffle array 624a is disposed at the distal end of the second lower plenum 622a, which is the farthest from the lower fin array 620a. The upper baffle array 624b is disposed at the distal end of the second upper plenum 622b, which is the farthest from the lower fin array 620b. A third lower plenum 626a and a third upper plenum 626b extend from the lower baffle array 624a and the upper baffle array 624b, respectively. The third lower plenum 626a is a space that extends between the lower baffle array 624a and the first outlet opening 608a. The third upper plenum 626b is a space that extends between the upper baffle array 624b and the second outlet opening 608b. Each of the third lower plenum 626a and the third upper plenum 626b is similar to the third plenum 526.

[0102] Although not shown in FIGS. 6A and 6B, the multi-layer injector insert 600 further includes one or more heating elements similar to the heating element 530 of FIG. 5C. The pattern and distribution of the passages, plenums, fins, and baffles within the multi-layer injector insert 600 are similar to those previously described with respect to the embodiments of FIGS. 5A - 5C. As long as space permits, there may be three or more layers within the multi-layer injector insert 600. In some embodiments, there are three layers for injecting three separate gas sheets into the processing space 110, or four layers for injecting four separate gas sheets into the processing space 110.

[0103] FIG. 6C is a schematic side view from a first side of the gas injector 108 of FIG. 6A according to an embodiment of the present disclosure. The gas injector 108 is shown facing the front surface 512 of the injector base 502. Similar to that described above with reference to FIG. 5D, the gas injector 108 includes one or more openings 528 for the heating element 530 and one or more mounting fasteners 507. The gas introduction passage 514 is replaced by a first gas introduction passage 614a and a second gas introduction passage 614b. The second gas introduction passage 614b is disposed above the first gas introduction passage 614a. Both the first gas introduction passage 614a and the second gas introduction passage 614b are disposed between the openings 528 and between the heating elements 530. The first gas introduction passage 614a and the second gas introduction passage 614b are located inside the outer surface 604 of the multilayer injector insert 600. The height of the multilayer injector insert 600 can be adjusted to compensate for an additional layer of the gas passage, or each gas passage can be made narrower.

[0104] FIG. 6D is a schematic side view from a second side of the gas injector of FIG. 6A according to an embodiment of the present disclosure. The gas injector 108 is shown facing the injection surface 610 of the multilayer injector insert 600. As shown, a first outlet opening 608a and a second outlet opening 608b are disposed within the range of the injection surface 610.

[0105] The height H5 of the injection surface 610, and thus the height of the injector insertion portion 600, is from about 5 mm to about 15 mm, such as from about 6 mm to about 12 mm, such as from about 8 mm to about 12 mm. The height H5 is the same as the height of the injector passage 408, enabling the injector insertion portion 600 to be inserted into the injector passage 408. The width W5 of the injection surface 610 is the same as the width W5 of the injection surface 510. The width W5 is the same as the width of the injector passage 408, enabling the injector insertion portion 600 to be inserted into the injector passage 408. The ratio of the height H5 to the width W5 of the injection surface 600 is from about 1:7 to about 1:20, such as from about 1:8 to about 1:16, such as from about 1:10 to about 1:15. The ratio of the height H5 to the width W5 helps to form a uniform spread of the gas exiting the injector insertion portion 600.

[0106] The respective widths W6 of the first outlet opening 608a and the second outlet opening 608b are the same as the width W6 of the outlet opening 508. Each of the first outlet opening 608a and the second outlet opening 608b further includes a height H6. The height H6 is from about 2 mm to about 8 mm, such as from about 3 mm to about 7 mm, such as from about 3 mm to about 6 mm. The height H6 of the outlet openings 608a, 608b is equal to the height of the remainder of each distribution system 515. In some embodiments, the height H6 varies through the distribution system 515.

[0107] FIG. 7A is a schematic gas flow diagram of a gas supply assembly 700 according to an embodiment of the present disclosure. The gas supply assembly 700 can be used instead of or together with one of a first process gas supply source 174 and a second process gas supply source 176. One or more gas supply assemblies 700 are configured to supply process gas to a processing space 110 via one or more gas injectors 108. The gas supply assembly 700 assists in controlling the partial pressure and flow rate of a precursor from a process gas supply source 702 to the processing space 110. By controlling the partial pressure of the gas from the process gas supply source 702, it becomes possible to control the concentration of the process gas flowing into various regions of the processing space 110. The gas supply assembly 700 enables separately controlling the flow rate and partial pressure (i.e., concentration) of the process gas and precursor flowing past various arms of the gas supply assembly 700. A user can configure various arms or conduits of the gas supply assembly 700 to supply a specific process gas at the same flow rate at various partial pressures / concentrations.

[0108] The gas supply assembly 700 includes a process gas supply source 702 fluidly coupled to a pressure controller 704, a gas reservoir 706 fluidly coupled to the pressure controller 704, and an exhaust induction valve 708 fluidly coupled to the gas reservoir 706 and an exhaust pump 734 and disposed between the gas reservoir 706 and the exhaust pump 734. A plurality of splitter valves 726a - 726f are fluidly connected to the gas reservoir 706 and the processing space 110. The plurality of splitter valves 726a - 726f are coupled in parallel to the gas reservoir 706. Each of the plurality of splitter valves 726a - 726f is connected to valve controllers 724a - 724f. The valve controllers 724a - 724f control the volumetric flow rate through each of the splitter valves 726a - 726f from the gas reservoir 706.

[0109] The carrier gas supply source 728 is fluidly coupled to a plurality of mixing points 732. The plurality of mixing points 732 are disposed between the carrier gas supply source 728 and the processing space 110, and between the plurality of splitter valves 726a - 726f and the processing space 110. The gas from the splitter valves 726a - 726f and the gas from the carrier gas supply source 728 are combined at the mixing point 732 before being supplied to the gas injector 108.

[0110] The process gas supply source 702 can be a gas panel or a single process gas supply source 702. The process gas supply source 702 is configured to supply process gases such as silicon - containing gas, germanium - containing gas, nitrogen - containing gas, carbon - containing gas, oxygen - containing gas. Other types of process gases are also conceivable. The process gas supply source 702 is configured to supply the process gas at a predetermined concentration and flow rate, whereby the mass flow rate of the components in the process gas is controlled by the process gas supply source 702. The process gas supply source 702 is fluidly coupled to the pressure controller 704 via the process gas conduit 714. The pressure controller 704 is configured to control the pressure of the gas stored in the gas reservoir 706. The pressure controller 704 controls the pressure within the gas reservoir 706. The pressure controller 704 controls the flow of the process gas through the pressure controller 704 and the exhaust induction valve 708 in consideration of the gas that exits the gas reservoir 706 and enters the processing space 110.

[0111] The pressure controller 704 is fluidly coupled to the gas reservoir 706 by a reservoir supply conduit 716. The reservoir supply conduit 716 transfers gas between the pressure controller 704 and the gas reservoir 706. The gas reservoir 706 is a reservoir of pressurized gas. The gas reservoir 706 is maintained at a pressure of about 10 psi to about 65 psi, such as about 10 psi to about 60 psi, such as about 14 psi to about 50 psi. The gas reservoir 706 is configured to maintain a constant pressure. The constant pressure helps control the pulsation of the process gas passing through the splitter valves 726a - 726f. The gas reservoir 706 is a chamber or tank and is configured to hold more than about 100 cm 3 of process gas during the substrate processing step. The gas reservoir 706 has a volume of about 100 cm 3 to about 750 cm 3 , such as about 100 cm 3 to about 500 cm3. The gas reservoir 706 is large enough to allow for a uniform mixing of the gas introduced by the process gas source 702. The gas reservoir 706 can be configured to continuously pass a flow rate of about 100 sccm to about 500 sccm.

[0112] When the pressure within the gas reservoir 706 exceeds a predetermined limit value, the pressure controller 704 communicates with the exhaust induction valve 708 via the exhaust valve controller 712. The exhaust valve controller 712 is coupled to the exhaust induction valve 708 and opens and closes the exhaust induction valve 708 to increase or decrease the outflow of process gas from the gas reservoir 706 to the exhaust pump 734. The exhaust pump 734 is coupled to the exhaust induction valve 708 via an exhaust conduit 720. The exhaust conduit 720 also fluidly couples the exhaust module 165 and the lower chamber exhaust passage 164 to the exhaust pump 734.

[0113] The exhaust induction valve 708 enables the process gas from the gas reservoir 706 to be exhausted to the exhaust pump 734 while each of the splitter valves 726a - 726f is closed. During the period when all of the splitter valves 726a - 726f are closed, the flow rate of the process gas exhausted through the exhaust induction valve 708 is equal to the desired flow rate of the process gas flowing through each of the splitter valves 726a - 726f. When the splitter valves 726a - 726f are in the open position and allow the process gas to enter the processing space 110, the exhaust induction valve 708 is closed. By combining the opening and closing of the splitter valves 726a - 726f and the exhaust induction valve 708, a high-speed gas supply time is provided with little or no increase in speed and pressure. The total flow rate through each of the splitter valves 726a - 726f and the exhaust induction valve 708 over time is controlled to be approximately constant using the master flow controller 722.

[0114] Each splitter valve 726a - 726f is coupled to the gas reservoir 706 via a splitter conduit 725. The splitter conduit 725 branches into a plurality of gas lines and is configured to connect to each of the splitter valves 726a - 726f. Each of the splitter valves 726a - 726f is coupled in parallel, and none of the splitter valves 726a - 726b are in the same gas flow path. The plurality of splitter valves 726a - 726f includes a first splitter valve 726a, a second splitter valve 726b, a third splitter valve 726c, a fourth splitter valve 726d, a fifth splitter valve 726e, and a sixth splitter valve 726f. Each of the splitter valves 726a - 726f is configured to control the flow rate of the process gas passing through itself from the splitter conduit 725. Each of the splitter valves 726a - 726f is controlled by one of the valve controllers 724a - 724f. The valve controllers 724a - 724f are connected to the master flow controller 722. The master flow controller 722 is configured to give instructions to each of the valve controllers 724a - 724f. Each of the valve controllers 724a - 724f is configured to control the configuration of the splitter valves 726a - 726f such that each of the valve controllers 724a - 724f opens and closes one of the splitter valves 726a - 726f. By the splitter valves 726a - 726f, it becomes possible to control the flow rate or partial pressure (i.e., concentration) of the process gas flowing through each branch of the splitter valve assembly 731 before mixing with the carrier gas at the mixing point 732. Therefore, the flow rate exiting from each gas injector 108 can be the same, but the partial pressure of the process gas in the gas flow exiting from the gas injector 108 can be varied between each gas injector 108. The partial pressure of the process gas passing through each gas injector 108 can be further varied during the same process in the processing chamber so that the concentration of the process gas passing through each gas injector 108 changes as one substrate is processed.

[0115] The first valve controller 724a is configured to open and close the first splitter valve 726a. The second valve controller 724b is configured to open and close the second splitter valve 726b. The third valve controller 724c is configured to open and close the third splitter valve 726c. The fourth valve controller 724d is configured to open and close the fourth splitter valve 726d. The fifth valve controller 724e is configured to open and close the fifth splitter valve 726e. The sixth valve controller 724f is configured to open and close the sixth splitter valve 726f. Each of the splitter valves 726a - 726f can be opened and closed to various degrees in order to partially restrict or allow the flow of the process gas passing through one of the splitter valves 726a - 726f. By opening the splitter valves 726a - 726f, the flow rate increases through one or more of the splitter valves 726a - 726f. By at least partially closing one or more of the splitter valves 726a - 726f, the flow rate decreases through one or more of the splitter valves 726a - 726f.

[0116] Although it is shown as having six splitter valves 726a - 726f and six valve controllers 724a - 724f, other numbers of splitter valves 726a - 726f and valve controllers 724a - 724f are also conceivable. In some embodiments, there are from 2 to 20 splitter valves 726a - 726f, such as from 3 to 15 splitter valves 726a - 726f, such as from 4 to 12 splitter valves 726a, 726f, such as from 4 to 10 splitter valves 726a - 726f, such as from 4 to 8 splitter valves 726a - 726f, such as from 4 to 6 splitter valves 726a - 726f. In the embodiments shown in FIGS. 1, 2A, 2B, 4A, and 4B, there are five splitter valves 726a - 726f. Similarly, there may be from 2 to 20 valve controllers 724a - 724f, such as from 3 to 15 valve controllers 724a - 724f, such as from 4 to 12 valve controllers 724a - 724f, such as from 4 to 10 valve controllers 724a - 724f, such as from 4 to 8 valve controllers 724a - 724f, such as from 4 to 6 valve controllers 724a - 724f. In the embodiments shown in FIGS. 1, 2A, 2B, 4A, and 4B, there are five valve controllers 724a - 724f.

[0117] The flow rate through some of the splitter valves 726a - 726f can be controlled to be less than the flow rate through other splitter valves 726a - 726f. In some embodiments, each of the splitter valves 726a - 726f and the corresponding valve controllers 724a - 724f is regarded as a splitter valve assembly 731.

[0118] The gas flows into a plurality of gas splitting conduits 733 through each of the splitter valves 726a - 726f. The gas splitting conduits 733 extend from each of the splitter valves 726a - 726f to a mixing point 732 among the plurality of mixing points 732. The gas flow through each gas splitting conduit 733 is combined with the carrier gas at the mixing point 732. The carrier gas is supplied from a carrier gas source 728. The carrier gas is supplied from the carrier gas source 728 to each mixing point 732 via a carrier gas conduit 730. The carrier gas conduit 730 may include a splitter valve assembly similar to the splitter valve assembly 731 described above. Alternatively, the carrier gas conduit 730 is divided into a plurality of carrier gas lines. One of the carrier gas lines is connected to each mixing point 732. The carrier gas supplied by the carrier gas source 728 can be any one of helium (He), nitrogen (N2), hydrogen (H2), argon (Ar), or oxygen (O2), or a combination thereof. Other carrier gases are also envisioned. In some embodiments, the carrier gas source 728 is replaced by a second process gas source.

[0119] After the process gas is combined with the carrier gas at one of the mixing points 732 and becomes one, the combined gas is supplied to each of one or more gas injectors 108 for injection into the processing space 110 through the gas injector 108. Individual mixed gas conduits 735 extend between each mixing point 732 and the corresponding each gas injector 108.

[0120] Each of the valve controllers 724a - 724f is connected to the master flow controller 722. Each of the valve controllers 724a - 724f is connected to the master flow controller 722 using one or more electrical connections or is connected using an electronic signal or a radio frequency (RF) signal. The master flow controller 722 is further connected to each of the pressure controller 704, the gas reservoir 706, and the exhaust valve controller 712. The master flow controller 722 is configured to send and receive instructions to and from each of the valve controllers 724a - 724f, the pressure controller 704, the gas reservoir 706, and the exhaust valve controller 712 to control the flow rate of the process gas into the processing space 110.

[0121] Each of the splitter valves 726a - 726f and the exhaust induction valve 708 is configured to control the flow rate of the process gas passing through a conduit disposed within the gas supply assembly 700. The types of valves that can constitute the splitter valves 726a - 726f and the exhaust induction valve 708 include rotary valves, linear valves, and self - actuating valves. More specifically, the splitter valves 726a - 726f and the exhaust induction valve 708 can be one of a ball valve, a plug valve, a butterfly valve, a gate valve, a globe valve, a pinch valve, a diaphragm valve, or a needle valve. The type of valve is selected at least partially according to the degree of accuracy used when distributing the process gas throughout the gas supply assembly 700.

[0122] The gas supply assembly 700 enables control of both the flow rate of the mixed gas entering the processing space 110 and the concentration / partial pressure of the process gas in the mixed gas. By controlling both the concentration / partial pressure of the process gas and the total flow rate, it becomes possible to vary the distribution of the process gas across the substrate surface. By controlling the concentration of the process gas, it becomes possible to better control the deposition rate in various regions of the substrate.

[0123] FIG. 7B is a schematic gas flow diagram of the mixed gas assembly 700 of FIG. 7A and a second mixed gas assembly 701 according to an embodiment of the present disclosure. Each of the gas injectors 108 is attached to one of the mixed gas conduits 735. Each of the mixed gas conduits 735 extends from the supply assembly 700. The supply assembly 700 is shown in more detail in FIG. 7A. The second mixed gas assembly 701 is similar to the supply assembly 700. The second mixed gas assembly 701 is connected to each gas injector 108 via a plurality of second mixed gas conduits 740. The second mixed gas conduits 740 are similar to the mixed gas conduits 735 but extend from the second mixed gas assembly 701. Each component within the second mixed gas assembly 701 is similar to the components within the supply assembly 700.

[0124] The second mixed gas assembly 701 can be utilized with the multi-layer injector insertion portion 600 of FIGS. 6A - 6D. In the embodiments described herein, the supply assembly 700 supplies gas to the first gas introduction passage 614a (FIGS. 6B and 6C) of the gas injector 108, and the second mixed gas assembly 701 supplies gas to the second gas introduction passage 614b (FIGS. 6B and 6C) of the gas injector 108. Thus, the spread of the gas ejected by the gas injector 108 can be accurately controlled in both the flow rate and the process gas concentration.

[0125] Each of the exhaust module 165 and the lower chamber exhaust passage 164 is in fluid communication with an exhaust conduit 720 for removing the gas supplied by both the first mixed gas assembly 700 and the second mixed gas assembly 701. In some embodiments, both of the mixed gas assemblies 700, 701 share a common exhaust system such as the exhaust conduit 720 and the exhaust pump 734.

[0126] The first mixed gas assembly 700 and the second mixed gas assembly 701 may supply the same gas or different gases. In some embodiments, the first mixed gas assembly 700 supplies a first process gas for depositing a layer on the substrate 150. The second mixed gas assembly 701 is utilized to supply a second process gas to the processing space 110. The second process gas may be the same as the first process gas and may deposit a second layer on the substrate 150. Alternatively, the second mixed gas assembly 701 supplies a purge gas, a cleaning gas, or an etchant gas. In some embodiments, the same gas is utilized but supplied at different flow rates or concentrations. The gases can be supplied simultaneously through the first mixed gas assembly 700 and the second mixed gas assembly 701, or at staggered times according to the desired process being performed within the flowing gas and the processing chamber 100.

[0127] FIG. 8 is a flowchart of a method 800 for use with the gas supply assembly 700 of FIG. 7A, according to an embodiment of the present disclosure. The method 800 is utilized to control the flow rate and concentration of a process gas to a processing space such as the processing space 110. During step 802, a first mixed gas is introduced into a gas reservoir such as the gas reservoir 706. The first mixed gas includes a process gas at a first concentration.

[0128] The gas reservoir is a pressure reservoir configured to maintain the amount of gas therein at a predetermined pressure. The amount of gas is greater than about 100 sccm, for example, a process gas greater than about 100 cm 3 and, for example, about 100 cm 3 to about 750 cm 3 , for example, about 100 cm 3 to about 500 cm 3It is the process gas. The pressure of the first mixed gas in the gas reservoir 706 is maintained within the above-mentioned predetermined pressure range in order to avoid the resonance mode in the gas reservoir that can generate dynamic pressure vibrations. The exhaust induction valve and the plurality of splitter valves are used to maintain a substantially constant pressure in the gas reservoir. The exhaust induction valve is the exhaust induction valve 708, and the plurality of splitter valves are the splitter valves 724a to 724f.

[0129] The first mixed gas is introduced into the gas reservoir by a process gas supply source such as the process gas supply source 702. The process gas supply source is configured to supply the first mixed gas containing the process gas. The process gas can be one of or a combination of a silicon-containing gas, a germanium-containing gas, a nitrogen-containing gas, a carbon-containing gas, and an oxygen-containing gas. Other types of process gases not listed are also conceivable. The process gas supply source supplies the first mixed gas at a predetermined first process gas concentration and flow rate, whereby the mass flow rate of the components in the first mixed gas is controlled by the process gas supply source. The flow rate of the first mixed gas from the process gas supply source is the first flow rate. The first flow rate is from about 100 sccm to about 2500 sccm, for example from about 100 sccm to about 2000 sccm.

[0130] After process 802, another process 804 of supplying the first mixed gas to a plurality of splitter valves is executed. The plurality of splitter valves can be splitter valves 726a to 726f. The plurality of splitter valves are respectively arranged at different branches of a splitter conduit such as splitter conduit 725. Each of the plurality of splitter valves is utilized to control the flow rate of the first mixed gas passing therethrough. Accordingly, the splitter valves are utilized to control the flow rate of the first mixed gas across each branch of the splitter conduit 725. The flow rate of the first mixed gas passing through each splitter valve is equal to the total flow rate of the first mixed gas from the process gas supply source divided by the number of splitter valves. In an embodiment where there are five splitter valves, the flow rate of the first mixed gas is about 20 sccm to about 500 sccm, for example about 20 sccm to about 400 sccm. In an embodiment where there are six splitter valves, the flow rate of the first mixed gas is about 15 sccm to about 420 sccm, for example about 15 sccm to about 335 sccm. Each splitter valve can be opened and closed to control the flow rate of the first mixed gas. In some embodiments, the splitter valve is controlled to allow a partial flow rate of the first mixed gas passing therethrough. Each splitter valve is individually controlled so that each of the splitter valves can be adjusted for a desired gas flow rate. After passing through the splitter valve, the first mixed gas flows into a plurality of gas splitting conduits such as gas splitting conduit 733. One gas splitting conduit can be coupled to each of the splitter valves. The gas splitting conduit 733 carries the first mixed gas passing therethrough and connects to a plurality of mixing points such as a plurality of mixing points 732. Each of the gas splitting conduits 733 is coupled to one of the mixing points 732.

[0131] Another step 806 of supplying carrier gas to the carrier gas conduit is performed before step 804, simultaneously with step 804, or after step 804. The carrier gas is supplied by a carrier gas source during step 806. The carrier gas source can be the carrier gas source 728. The carrier gas source is configured to supply carrier gas at a flow rate less than about 30 slm, for example, at a flow rate of about 5 slm to about 30 slm, for example, about 10 slm to about 30 slm. The carrier gas can be any one of helium (He), nitrogen (N2), hydrogen (H2), argon (Ar), or oxygen (O2), or a combination thereof. Other carrier gases are also contemplated. The carrier gas conduit can be the carrier gas conduit 730. The carrier gas conduit branches into a plurality of carrier gas lines. One carrier gas line is connected to each of the plurality of mixing points.

[0132] Simultaneously with the supply of the carrier gas through the carrier gas conduit in step 806 and after the first mixed gas has flowed through the splitter valve in step 804, the carrier gas and the first mixed gas are mixed during step 808. The mixing of the first mixed gas and the carrier gas is performed at a plurality of mixing points. Each of the mixing points among the plurality of mixing points can be an intersection of one of the carrier gas lines of the carrier gas conduit and one of the gas splitting conduits. Accordingly, each mixing point can include a T-joint or a Y-joint for joining the distal end of the carrier gas line and the distal end of the gas splitting conduit to mix the carrier gas and the first mixed gas. By mixing the carrier gas and the first mixed gas, a second mixed gas is generated, and the second mixed gas flows out from the mixing point and flows through a plurality of mixed gas conduits such as the mixed gas conduit 735. When first mixed at the mixing point, the carrier gas and the first mixed gas may not be uniformly mixed. While the second mixed gas flows through the plurality of mixed gas conduits and one or more gas injectors, the carrier gas and the first mixed gas continue to mix.

[0133] The second mixed gas has a second process gas concentration that is lower than the first process gas concentration. The flow rate of the second mixed gas through each mixed gas conduit is equal to the total flow rate of both the first mixed gas and the carrier gas through each mixed gas conduit. The flow rate of the second mixed gas through each mixed gas conduit is from about 2 slm to about 10 slm, such as from about 4 to about 8 slm, such as about 6 slm. The flow rate of the second mixed gas through each mixed gas conduit may depend at least in part on the number of gas injectors within the processing chamber. The ratio of the first mixed gas to the carrier gas in the second mixed gas can be controlled and adjusted using the apparatus described herein, whereby the concentration and flow rate of the first mixed gas through each injector are adjusted for each individual injector as desired for various processes. The total flow rate through each gas injector can be kept constant, and the concentration / partial pressure of the first mixed gas in the second mixed gas is varied between each gas injector.

[0134] The second mixed gas is flowed through a plurality of gas injectors via a mixed gas conduit. Each of the mixed gas conduits is coupled to a gas injector and supplies the second mixed gas to the gas injector. When the second mixed gas is introduced into the gas injector, the second mixed gas is introduced into the processing space of the processing chamber during step 810. The introduction of the second mixed gas into the processing space is performed at a predetermined rate and gas distribution. By introducing the second mixed gas, it becomes possible to form one or more layers on a substrate disposed within the processing space.

[0135] FIG. 9A is a schematic plan view of a ring injector 900 according to an embodiment of the present disclosure. The ring injector 900 is configured to be disposed around a processing space in addition to the gas injector 108. The ring injector 900 is disposed inside the processing space 110 and attached to the inner surface 404 of the injection ring 116 or the inner surface 304 of the base ring 114. As shown in FIG. 1, the ring injector 900 is attached to the inner surface 404 of the injection ring 116. The ring injector 900 is disposed above the upper surface of the substrate while the substrate is in the processing position. Accordingly, the ring injector 900 is disposed above the horizontal plane 125 of FIG. 1 and inside the upper chamber 111. The ring injector 900 is configured to supply a precursor into the processing space 110 through a plurality of holes 906. The ring injector 900 provides flexibility in precursor supply within the chamber. The ring injector 900 can supplement the gas flow from the gas injector 108 and assist in controlling the deposition rate near the edges of the substrate 150.

[0136] A ring supply line 902 is connected to a distribution body 908. The distribution body 908 is a ring-shaped distribution body 908 and is connected to the ring supply line 902. The ring supply line 902 is configured to pass through a supply port (not shown) in the wall of the processing chamber 100. The ring supply line 902 is configured to supply a precursor gas to the distribution body 908. The ring supply line 902 and the distribution body 908 are hollow passages or conduits configured to allow a process gas to flow therethrough. The distribution body 908 has an outer ring surface 904 and an inner ring surface 910. The outer ring surface 904 is configured to be attached to a surface within the processing space 110, such as the inner surface 404 of the injection ring 116.

[0137] A plurality of holes 906 are formed through the inner ring surface 910. The plurality of holes 906 are openings formed between the inner hollow portion of the distribution body 908 and the inner ring surface 910. The plurality of holes 906 are arranged at intervals around the inner ring surface 910 so that gas can be distributed at various circumferential positions around the processing space 110. The diameter of the distribution body 908 and the size of the holes 906 are affected by the desired flow rate and the desired position of the precursor distribution.

[0138] The diameter of the inner ring surface 910 is from about 250 mm to about 450 mm, for example from about 300 mm to about 400 mm, for example about 350 mm. The size of each of the holes 906 depends on the number and position of the holes 906. The holes 906 can have a diameter of from about 1 mm to about 5 mm, for example from about 2 mm to about 4 mm, for example from about 2 mm to about 3 mm. There are about 4 to 30 holes 906 arranged through the inner ring surface 906, for example about 6 to 25 holes 906, for example about 8 to 20 holes 906. The holes 906 are evenly arranged around the entire circumference of the inner ring surface 910. In some embodiments, the holes 906 are arranged asymmetrically around the inner ring surface 906. By dispersing the holes 906 asymmetrically, it is possible to increase the concentration of the process gas near the end of the substrate 150 far from the gas injector 108 or the upper chamber exhaust passage opening 324 (FIG. 3B). The asymmetric dispersion further aids in controlling the gas flow through the processing space 110.

[0139] FIG. 9B is a schematic plan view of a ring injector 901 according to another embodiment of the present disclosure. In the embodiment of FIG. 9B, the ring injector 901 is only configured to surround a portion of the processing space 110, whereby the distribution body 906 is not a complete ring. In the embodiment of FIG. 9B, the distribution body 906 is a partial ring such as a semi-circle. Alternatively, the distribution body 906 can be a 1 / 4 ring or other arc segment. Alternatively, the distribution body 906 can be a 3 / 4 ring such that the distribution body 906 forms approximately 75% of a circle. Other embodiments of the distribution body 906 form various partial rings. As used herein, a partial ring is defined as a portion of a ring that forms a circle smaller than a full circle, e.g., from about 5% to about 95% of a full circle, e.g., from about 10% to about 90% of a full circle.

[0140] The embodiment of FIG. 9B in which a partial ring is used for the distribution body 906 can be used for processing steps where gas distribution around the entire circumference of the substrate is not desired. Except for the partial ring formation of the distribution body 906, the ring injector 901 of FIG. 9B is the same as the ring injector 900 of FIG. 9A.

[0141] The components described herein enable better uniformity and deposition control within a processing chamber such as processing chamber 100. Although shown together within one processing chamber 100 herein, the components described herein can be utilized separately in existing or alternative deposition processing chambers.

[0142] While the foregoing description is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure can be devised without departing from the basic scope thereof, and the scope of the present disclosure is defined by the following claims.

Claims

1. 1. A process chamber for processing a substrate, comprising: an injection ring including one or more injector passages disposed in one half of the injection ring and extending therethrough; one or more gas injectors, each of the one or more gas injectors disposed within one of the injector passages, each of the gas injectors comprising: Injector insertion part, Gas inlet passage, a gas diffusion passage fluidly coupled to the gas introduction passage; and an exit opening disposed through an injection face of the injector insert opposite the gas introduction passage and in fluid communication with the gas diffusion passage; one or more gas injectors including 1. A process chamber for processing a substrate comprising:

2. The processing chamber of claim 1 , wherein each of the one or more gas injectors further comprises one or more heaters through the injector insert.

3. 10. The processing chamber of claim 1, wherein there are three or more injector passages and three or more gas injectors, each of the gas injectors oriented toward a central portion of the injection ring.

4. 2. The processing chamber of claim 1, wherein the gas introduction passage is a single passage disposed through the injector base.

5. The processing chamber of claim 1 , wherein the gas diffusion passage comprises multiple passage branches and multiple paths.

6. 6. The processing chamber of claim 5, wherein a fin array is disposed between the gas diffusion passage and the exit opening, and a baffle array is disposed between the fin array and the exit opening.

7. The method further includes a ring injector, the ring injector comprising: a distributor body including an inner ring surface; a plurality of holes disposed through the inner ring surface; The processing chamber of claim 1 , comprising:

8. 1. A gas injector for use in a processing chamber, comprising: An injector insertion portion; a gas introduction passage disposed through the gas injector; a gas diffusion passage connected to the gas introduction passage, the gas diffusion passage forming a gas distribution tree; an exit opening disposed through an injection face of the injector insert opposite the gas introduction passage and in fluid communication with the gas diffusion passage; Including, a gas injector.

9. The gas injector of claim 8 , wherein the gas diffusion passage includes multiple passage branches and multiple paths.

10. The gas injector of claim 9 , wherein a fin array is disposed between the gas diffusion passage and the exit opening.

11. The gas injector of claim 10 , wherein a baffle array is disposed between the fin array and the exit opening.

12. 12. The gas injector of claim 11, wherein the baffle array includes a plurality of baffles, each baffle shaped to have a first surface facing the fin array that is wider than a second surface facing the exit opening.

13. The gas injector of claim 8 , further comprising one or more heaters disposed within the injector insert.

14. The gas injector of claim 13 , wherein each of the one or more heaters is a resistive heating element or a radiative heating element.

15. the gas introduction passage is a first gas introduction passage, the gas diffusion passage is a first diffusion passage, the exit opening is a first exit opening, and the injector insert is A second gas introduction passage; a second gas diffusion passage; A second outlet opening; and The gas injector of claim 8 further comprising:

16. 16. The gas injector of claim 15, wherein the first outlet opening is disposed below the second outlet opening.

17. 1. A gas mixing assembly for use in a processing chamber, comprising: a gas reservoir having an inlet configured to be connected to a process gas source; an exhaust diverter valve fluidly coupled to the gas reservoir and configured to be coupled to an exhaust pump that bypasses the process chamber; a plurality of splitter valves arranged in parallel and fluidly coupled to the gas reservoir; a processing chamber, a processing volume of the processing chamber in fluid communication with each of the splitter valves; a master flow controller configured to control flow through the exhaust diverter valve and each of the plurality of splitter valves; A mixed gas assembly comprising:

18. a plurality of gas split conduits, each of the gas split conduits fluidly coupled between one of the splitter valves and one of a plurality of mixing points; a carrier gas conduit configured to fluidly couple to a carrier gas source and to each of the plurality of mixing points; a plurality of mixed gas conduits extending between the plurality of mixing points and the processing space; 20. The mixed gas assembly of claim 17, further comprising:

19. 20. The gas mixing assembly of claim 17, further comprising a gas injector fluidly coupled to each of the splitter valves and configured to supply a mixed gas to the process space.

20. 20. The mixed gas assembly of claim 17, wherein each of the splitter valves further comprises a valve controller configured to open and close the splitter valve.

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