Dielectric substrate and method of forming the same

Abstract

To provide improved dielectric materials and dielectric layers that can be used in PCBs and other high-frequency applications.SOLUTION: The present disclosure relates to a dielectric substrate that may include a polyimide layer and a first filled polymer layer overlying the polyimide layer. The first filled polymer layer includes a resin matrix component and a first ceramic filler component. The first ceramic filler component may include a first filler material. The first filler material further has a mean particle size of at most about 10 micrometers.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a dielectric substrate and a method for forming the same. In particular, the present disclosure relates to a dielectric substrate for use in a copper-clad laminate structure and a method for forming the same. and a method for forming the same.

Background Art

[0002] A copper-clad laminate (CCL) includes a dielectric material laminated on or between two layers of conductive copper foil. Such a CCL is then processed into a printed circuit board (PCB) in a subsequent process. When used to form a PCB, the conductive copper foil is selectively etched to form a circuit having through-holes opened between layers, metallized (i.e., plated), and establish electrical continuity between the layers of the multilayer PCB. Therefore, the CCL must exhibit excellent thermomechanical stability. Also, the PCB is routinely exposed to excessively high temperatures not only during manufacturing processes such as soldering but also during use. As a result, the PCB is required to function without deforming under continuous temperatures above 200°C, withstand severe temperature fluctuations, and not absorb moisture. The dielectric layer of the CCL serves as a spacer between the conductive layers and can minimize signal loss and crosstalk by blocking conductivity. The lower the dielectric constant (absolute dielectric constant) of the dielectric layer, the faster the speed of the electrical signal passing through the layer. Therefore, a low dielectric tangent, which depends on temperature, frequency, and the polarizability of the material, is extremely important for high-frequency applications. Therefore, improved dielectric materials and dielectric layers that can be used for PCBs and other high-frequency applications are desired.

Summary of the Invention

[0003] According to the first aspect, the dielectric substrate can include a polyimide layer and a first filling polymer layer covering the polyimide layer. The first filling polymer layer can include a resin matrix component and a first ceramic filler component. The first ceramic filler component can include a first filler material. The first filler material can further have an average particle size of about 10 micrometers or less.

[0004] According to another aspect, the copper-clad laminate can include a copper foil layer and a dielectric substrate covering the copper foil layer. The dielectric substrate can include a polyimide layer and a first filling polymer layer covering the polyimide layer. The first filling polymer layer can include a resin matrix component and a first ceramic filler component. The first ceramic filler component can include a first filler material. The first filler material can further have an average particle size of about 10 micrometers or less.

[0005] According to still another aspect, the printed circuit board can include a copper foil layer and a dielectric substrate covering the copper foil layer. The dielectric substrate can include a polyimide layer and a first filling polymer layer covering the polyimide layer. The first filling polymer layer can include a resin matrix component and a first ceramic filler component. The first ceramic filler component can include a first filler material. The first filler material can further have an average particle size of about 10 micrometers or less.

[0006] According to another aspect, a method of forming a dielectric substrate can include providing a polyimide layer and combining a first resin matrix precursor component and a first ceramic filler precursor component to form a first forming mixture, and forming the first forming mixture into a first filled polymer layer covering the polyimide layer. The first ceramic filler precursor component can include a first filler precursor material. The first filler precursor material can further have an average particle diameter of about 10 micrometers or less.

[0007] According to yet another aspect, a method of forming a copper-clad laminate can include providing a copper foil and forming a dielectric layer covering the copper foil. Forming the dielectric layer can include providing a polyimide layer, combining a first resin matrix precursor component and a first ceramic filler precursor component to form a first forming mixture, and forming the first forming mixture into a first filled polymer layer covering the polyimide layer. The first ceramic filler precursor component can include a first filler material. The first filler precursor material can further have an average particle diameter of about 10 micrometers or less.

[0008] According to yet another aspect, a method of forming a printed circuit board can include providing a copper foil and forming a dielectric layer covering the copper foil. Forming the dielectric layer can include providing a polyimide layer, combining a first resin matrix precursor component and a first ceramic filler precursor component to form a first forming mixture, and forming the first forming the forming mixture in a first filled polymer layer covering the polyimide layer It can be. The first ceramic filler precursor component includes the first filler material It can be. The first filler precursor material can further have an average particle size of about 10 micrometers or less diameter.

Brief Description of the Drawings

[0009] Embodiments are shown by way of example and are not limited to the accompanying drawings.

Figure 1

Figure 2A

Figure 2B

Figure 3

Figure 4A

Figure 4B

Figure 5

Figure 6A

Figure 6B

[0010] Those skilled in the art should understand that the elements in the figures are shown for simplicity and clarity purposes and are not necessarily drawn to scale as shown.

Embodiments for Carrying Out the Invention

[0011] The following description focuses on specific embodiments and implementations of the teachings. The detailed description is provided to assist in describing specific embodiments and should not be construed as a limitation on the scope of the present disclosure or teachings or their applicability. It will be understood that other embodiments can be used based on the present disclosure and teachings provided herein.

[0012] The terms "comprises," "comprising," "includes," "including," "has," "having," or any other variations thereof are intended to cover non-exclusive inclusion. For example, a method, article, or apparatus that includes a list of features is not necessarily limited to those features, but may include other features not expressly listed or other features inherent to such method, article, or apparatus. Further, unless there is a conflicting description, "or" refers to inclusive "or" and not exclusive "or." For example, the condition A or B is satisfied by any one of the following: A is true (or exists) and B is false (or does not exist), A is false (or does not exist) and B is true (or exists), and both A and B are true (or exist). (or exist), and both A and B are true (or exist).

[0013] Also, the use of "a" or "an" is employed to describe the elements and components described herein. This is done merely for convenience and to give a general sense of the scope of the invention. This description is clearly not meant to imply otherwise. Unless otherwise specified, the singular forms "a," "an," and "the" include plural referents, and vice versa should be understood accordingly. For example, if a single article is described herein, two or more articles can be used instead of the single article. Similarly, if two or more articles are described herein, a single article can be replaced with two or more articles.

[0014] The embodiments described herein generally relate to a dielectric substrate that can include a polyimide layer and a first filled polymer layer covering the polyimide layer, wherein the first filled polymer layer can include a first resin matrix component and a first ceramic filler component.

[0015] Referring first to a method of forming a dielectric substrate, FIG. 1 includes a schematic diagram showing a forming method 100 for forming a dielectric substrate according to an embodiment described herein. According to a particular embodiment, the forming method 100 can include a first step 110 of providing a polyimide layer, a second step 120 of combining a first resin matrix precursor component and a first ceramic filler precursor component to form a first forming mixture, and a third step 130 of forming the first forming mixture into a first filled polymer layer covering the polyimide layer.

[0016] According to a particular embodiment, the first ceramic filler precursor component can include a first filler precursor material that can have certain properties that can improve the performance of the dielectric substrate formed by the forming method 100.

[0017] According to a particular embodiment, the first filler precursor material has a specific size distribution For purposes of the embodiments described herein, the particle size distribution of the material, e.g., the first fraction The particle size distribution of the filler precursor material is expressed as the particle size distribution D value D 10 , D 50 and D. 90 Any combination of The particle size distribution can be described using the D 10 A value is the number of particles that 10% of the particles are greater than or equal to the value. It is defined as the particle size value above which 90% of the particles are larger. 50 A value is the particle size at which 50% of the particles are smaller than that value and 50% of the particles are larger than that value. It is defined as the value D from the particle size distribution. 90 The value is the value below which 90% of the particles are smaller. It is defined as the particle size value above which 10% of the particles are larger. For this purpose, particle size measurements of certain materials are performed using laser diffraction spectroscopy.

[0018] According to a particular embodiment, the first filler precursor material has a particular size distribution D 10 value For example, the D of the first filler precursor material may be 10 is at least about 0.3 mm micrometers, or at least about 0.4 micrometers, or at least about 0.5 micrometers micrometers, or at least about 0.6 micrometers, or at least about 0.7 micrometers micrometers, or at least about 0.8 micrometers, or at least about 0.9 micrometers 1.0 micrometer, or at least about 1.1 micrometer at least about 1.2 micrometers, or even at least about 1.2 micrometers According to yet another embodiment, the first filler material may be 0.2 micrometers. Fee D 10is about 1.5 micrometers or less, or even about 1.4 micrometers or less, and may be about 1.6 micrometers or less, such as. The D of the first filler precursor material should be understood to be any value (including both end values) between any of the above minimum and maximum values. The D of the first filler precursor material D 10 should be understood to be within the range (including both end values) between any of the above minimum and maximum values. The D of the first filler precursor material D 10 is between any of the above minimum values and should be further understood to be within the range (including both end values) between any of the above maximum values.

[0019] According to other embodiments, the first filler precursor material may have a specific size distribution D value 50 For example, the D of the first filler precursor material D 50 is at least about 0.6 micro meter, or at least about 0.7 micrometer, or at least about 0.8 micro meter, or at least about 0.9 micrometer, or at least about 1.0 micro meter, or at least about 1.1 micrometer, or at least about 1.2 micro meter, or at least about 1.3 micrometer, or at least about 1.4 micro meter, or at least about 1.5 micrometer, or at least about 1.6 micro meter, or at least about 1.7 micrometer, or at least about 1.8 micro meter, or at least about 1.9 micrometer, or at least about 2.0 micro meter, or at least about 2.1 micrometer, or even at least about 2. 2 micrometers, etc., and may be at least about 0.5 micrometer. Further According to other embodiments, the D of the first filler material 50 is about 2.6 micrometers or less ​or less than or equal to about 2.5 micrometers, or even less than or equal to about 2.4 micrometers, etc., may be less than or equal to about 2.7 micrometers. The D of the first filler precursor material 50 is any value (including both end values) between any of the above minimum and maximum values. It should be understood that the D of the first filler precursor material 50 is within the range between any of the above minimum and maximum values (including both end values). It should be further understood.

[0020] According to other embodiments, the first filler precursor material may have a specific size distribution D 90 value For example, the D of the first filler precursor material 90 is at least about 0.9 micro- meter, or at least about 1.0 micrometer, or at least about 1.1 micro- meter, or at least about 1.2 micrometer, or at least about 1.3 micro- meter, or at least about 1.4 micrometer, or at least about 1.5 micro- meter, or at least about 1.6 micrometer, or at least about 1.7 micro- meter, or at least about 1.8 micrometer, or at least about 1.9 micro- meter, or at least about 2.0 micrometer, or at least about 2.1 micro- meter, or at least about 2.2 micrometer, or at least about 2.3 micro- meter, or at least about 2.4 micrometer, or at least about 2.5 micro- meter, or at least about 2.6 micrometer, or even at least about 2. 7 micrometers, etc., may be at least about 0.8 micrometer. Further According to other embodiments, the D of the first filler material 90is about 7.5 micrometers or less , or about 7.0 micrometers or less, or about 6.5 micrometers or less, or about 6. 0 micrometers or less, or about 5.5 micrometers or less, or about 5.4 microm eters or less, or about 5.3 micrometers or less, or about 5.2 micrometers or less, or even about 5.1 micrometers or less, etc., and may be about 8.0 micrometers or less . D of the first filler precursor material 90 should be understood to be any value between any of the above minimum and maximum values (including both ends). D of the first filler precursor material should be further understood to be within the range between any of the above minimum and maximum values (including both ends). 90 D of the first filler precursor material should be further understood to be within the range between any of the above minimum and maximum values (including both ends).

[0021] According to still other embodiments, the first filler precursor material may have a specific average particle size measured using laser diffraction spectroscopy. For example, the average particle size of the first filler precursor material is about 9 micrometers or less, or about 8 micrometers or less, or about 7 micro meters or less, or about 6 micrometers or less, or about 5 micrometers or less, or is about 4 micrometers or less, or about 3 micrometers or less, or even about 2 micro meters or less, etc., and may be about 10 micrometers or less. The average particle size of the first filler precursor material should be understood to be any value between any of the above values (including both ends). The average particle size of the first filler precursor material should be further understood to be within the range between any of the above values (including both ends). The average particle size of the first filler precursor material should be further understood to be within the range between any of the above values (including both ends).

[0022] According to yet another embodiment, the first filler precursor material is selected from the group consisting of a filler having a particular particle size distribution span ( The first filler precursor material may be described as having a PSD (Proton-Stimulating Dispersion Diffusion System). S is (D 90 -D 10 ) / D 50 where D 90 is a first filler precursor material Fee D 90 D is equal to the particle size distribution measurement 10 is the D of the first filler precursor material 10 particle size The distribution measure is equal to D 50 is the D of the first filler precursor material 50 Particle size distribution measurement For example, the PSDS of the first filler precursor material is about 4.5 or less, or about 4.0 or less. or less than about 5, such as less than about 3.5, or less than about 3.0, or even less than about 2.5. The PSDS of the first filler precursor material may be between any of the above values ​​(both It will be understood that the PS of the first filler precursor material may be any value, including any extreme value. It is further understood that DS may be within a range between any of the above values ​​(inclusive). Let it be understood.

[0023] According to yet another embodiment, the first filler precursor material is a filler precursor material as described in Brunauer-Em Specific surface area measured using BET surface area analysis (nitrogen adsorption) For example, the first filler precursor material may have an average surface area of ​​about 7.9m 2 / g or less, or about 7.5m 2 / g or less, or about 7.0m 2 / g or less, or about 6 .5m 2 / g or less, or about 6.0m 2 / g or less, or about 5.5m 2 / g or less, or about 5. 0 m 2 or less than about 4.5 m 2 / g or less than about 4.0 m 2 / g or less, or even about 3.5 m 2 / g or less, such as about 10 m 2 It may have an average surface area of / g or less. Further, other According to another embodiment, the first filler precursor material is at least about 2.2 m 2 / g or the like, at least about 1.2 m 2 / g. The average surface area of the first filler precursor material can be any value (including both end values) between any of the above minimum and maximum values. It should be understood that the average surface area of the first filler precursor material can be within the range (including both end values) between any of the above minimum and maximum values. It should be further understood that the average surface area of the first filler precursor material can be within the range (including both end values) between any of the above minimum and maximum values. It should be further understood that the average surface area of the first filler precursor material can be within the range (including both end values) between any of the above minimum and maximum values.

[0024] According to other embodiments, the first filler precursor material may include a specific material. According to a specific embodiment, the first filler precursor material may include a silica-based compound. Further, according to other embodiments, the first filler precursor material may consist of a silica-based compound. According to other embodiments, the first filler precursor material may include silica. Further, according to other embodiments, the first filler precursor material may consist of silica. According to other embodiments, the first filler precursor material may include silica. Further, according to other embodiments, the first filler precursor material may consist of silica. According to other embodiments, the first filler precursor material may include silica. Further, according to other embodiments, the first filler precursor material may consist of silica.

[0025] According to still other embodiments, the first forming mixture can include a first ceramic filler precursor component in a specific content. For example, the content of the first ceramic filler precursor component is at least about 31% by volume, or at least about 32% by volume, or at least about 33% by volume, or at least about 34% by volume, or at least about 35% by volume, or at least about 36% by volume, or at least about 37% by volume, or at least about 38% by volume, or at least about 39% by volume, or at least about 40% by volume, or at least about 41% by volume, or at least about 42% by volume, or at least about 43% by volume, or at least about 44% by volume, or at least about 45% by volume, or at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or at least about 55% by volume, or at least about 56% by volume, or at least about 57% by volume, or at least about 58% by volume, or at least about 59% by volume, or at least about 60% by volume, or at least about 61% by volume, or at least about 62% by volume, or at least about 63% by volume, or at least about 64% by volume, or at least about 65% by volume, or at least about 66% by volume, or at least about 67% by volume, or at least about 68% by volume, or at least about 69% by volume, or at least about 70% by volume, or at least about 71% by volume, or at least about 72% by volume, or at least about 73% by volume, or at least about 74% by volume, or at least about 75% by volume, or at least about 76% by volume, or at least about 77% by volume, or at least about 78% by volume, or at least about 79% by volume, or at least about 80% by volume, or at least about 81% by volume, or at least about 82% by volume, or at least about 83% by volume, or at least about 84% by volume, or at least about 85% by volume, or at least about 86% by volume, or at least about 87% by volume, or at least about 88% by volume, or at least about 89% by volume, or at least about 90% by volume, or at least about 91% by volume, or at least about 92% by volume, or at least about 93% by volume, or at least about 94% by volume, or at least about 95% by volume, or at least about 96% by volume, or at least about 97% by volume, or at least about 98% by volume, or at least about 99% by volume, or at least about 100% by volume, based on the total volume of the first forming mixture. or at least about 35% by volume, or at least about 36% by volume, or at least about 37% by volume, or at least about 38% by volume, or at least about 39% by volume, or at least about 40% by volume, or at least about 41% by volume, or at least about 42% by volume, or at least about 43% by volume, or at least about 44% by volume, or at least about 45% by volume, or at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or at least about 55% by volume, or at least about 56% by volume, or at least about 57% by volume, or at least about 58% by volume, or at least about 59% by volume, or at least about 60% by volume, or at least about 61% by volume, or at least about 62% by volume, or at least about 63% by volume, or at least about 64% by volume, or at least about 65% by volume, or at least about 66% by volume, or at least about 67% by volume, or at least about 68% by volume, or at least about 69% by volume, or at least about 70% by volume, or at least about 71% by volume, or at least about 72% by volume, or at least about 73% by volume, or at least about 74% by volume, or at least about 75% by volume, or at least about 76% by volume, or at least about 77% by volume, or at least about 78% by volume, or at least about 79% by volume, or at least about 80% by volume, or at least about 81% by volume, or at least about 82% by volume, or at least about 83% by volume, or at least about 84% by volume, or at least about 85% by volume, or at least about 86% by volume, or at least about 87% by volume, or at least about 88% by volume, or at least about 89% by volume, or at least about 90% by volume, or at least about 91% by volume, or at least about 92% by volume, or at least about 93% by volume, or at least about 94% by volume, or at least about 95% by volume, or at least about 96% by volume, or at least about 97% by volume, or at least about 98% by volume, or at least about 99% by volume, or at least about 100% by volume, based on the total volume of the first forming mixture.​ At least about 35% by volume, or at least about 36% by volume, or at least about 37% by volume, or at least about 38% by volume, or at least about 39% by volume, or at least about 40% by volume , or at least about 41% by volume, or at least about 42% by volume, or at least about 43% by volume, or at least about 44% by volume, or at least about 45% by volume, or at least about 4 6% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or even at least about 54% by volume, any of which may be at least about 30% by volume. According to yet other embodiments, the content of the first ceramic filler precursor component may be about 57% by volume or less, such as about 56% by volume or less, or even about 55% by volume or less, based on the total volume of the first forming mixture. It will be understood that the content of the first ceramic filler precursor component can be any value (including both end values) between the above-mentioned minimum and maximum values. It will be further understood that the content of the first ceramic filler precursor component can be within the range (including both end values) between any of the above-

[0026] mentioned minimum and maximum values. According to yet other embodiments, the first ceramic filler precursor component can include a first filler precursor material having a specific content. For example, the content of the first filler precursor material is at least about 81% by volume, or at least about 82% by volume, or at 4 volume %, or at least about 85 volume %, or at least about 86 volume %, or at least about 87 volume %, or at least about 88 volume %, or at least about 89 volume %, or even at least about 90 volume % and the like, may be at least about 80 volume %. According to still other embodiments the content of the first filler precursor material is about 99 volume % or less, or about 98 volume % or less, or about 97 volume % or less, or about 96 volume % or less, or about 95 volume % or less, or about 94 volume % or less, or about 93 volume % or less, or even about 92 volume % or less and the like, may be about 100 volume % or less. The content of the first filler precursor material may be any value (including both end values) between any of the above minimum and maximum values. It will be understood that the content of the first filler precursor material may be within the range (including both end values) between any of the above minimum and maximum values. (including both end values) and may be any value. It will be further understood that the content of the first filler precursor material may be within the range (including both end values) between any of the above minimum and maximum values.

[0027] According to still other embodiments, the first ceramic filler precursor component may include a second filler precursor material.

[0028] According to still other embodiments, the second filler precursor material can include a specific material. For example, the second filler precursor material can include a high dielectric constant ceramic material such as a ceramic material having a dielectric constant of at least about 14 . According to a specific embodiment , the second filler precursor material can include any high dielectric constant ceramic material such as TiO2, SrTiO3, ZrTi2O6, MgTiO 3, CaTiO3, BaTiO4, or any combination thereof.

[0029] According to yet another embodiment, the second filler precursor material may include TiO2 。According to yet another embodiment, the second filler precursor material may consist of TiO2 。

[0030] According to yet another embodiment, the first ceramic filler precursor component may include a second filler precursor material in a specific content 。For example, the content of the second filler precursor material may be at least about 2% by volume, or at least about 3% by volume, or at least about 4% by volume, or at least about 5% by volume, or at least about 6% by volume, or at least about 7% by volume, or at least about 8% by volume, or at least about 9% by volume, or at least about 10% by volume, etc., at least about 1% by volume 。According to yet another embodiment, the content of the second filler precursor material may be about 19% by volume or less, or about 18% by volume 。According to yet another embodiment, the content of the second filler precursor material may be about 19% by volume or less, or about 18% by volume 。According to yet another embodiment, the content of the second filler precursor material may be about 19% by volume or less, or about 18% by volume 。According to yet another embodiment, the content of the second filler precursor material may be about 19% by volume or less, or about 18% by volume 。According to yet another embodiment, the content of the second filler precursor material may be about 19% by volume or less, or about 18% by volume 。It will be understood that the content of the second filler precursor material can be any value between the above minimum and maximum values (including both ends). The content of the second filler 。It will be understood that the content of the second filler precursor material can be any value between the above minimum and maximum values (including both ends). The content of the second filler 。It will be understood that the content of the second filler precursor material can be any value between the above minimum and maximum values (including both ends). The content of the second filler 。It will be further understood that the content of the second filler precursor material can be within the range between any of the above minimum and maximum values (including both ends).

[0031] According to yet another embodiment, the first ceramic filler precursor component can include an amorphous material in a specific content 。For example, the first ceramic filler precursor component may be at least At least about 97% of amorphous, such as at least about 98%, or even at least about 99%, etc., can be included. It will be understood that the content of the amorphous material can be any value between any of the above values (including both end values). It will be further understood that the content of the amorphous material may be within the range between any of the above values (including both end values).

[0032] According to other embodiments, the first resin matrix precursor component may include a specific material. For example, the first resin matrix precursor component may include a perfluoropolymer. According to still other embodiments, the first resin matrix precursor component may consist of a perfluoropolymer.

[0033] According to still other embodiments, the perfluoropolymer of the first resin precursor matrix component may include a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof. According to other embodiments, the perfluoropolymer of the first resin matrix precursor component may consist of a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0034] According to still other embodiments, the perfluoropolymer of the first resin matrix precursor component The mark may include polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. ated ethylene propylene, FEP), or any combination thereof. ated ethylene propylene, FEP), or any combination thereof. According to still other embodiments, the perfluoropolymer of the first resin matrix precursor component may be polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. formed.

[0035] According to still other embodiments, the first forming mixture may include a specific content of the first resin matrix precursor component. For example, the content of the first resin matrix precursor component is at least about 46% by volume, or at least about 47% by volume %, or at least about 48% by volume, or at least about 49% by volume, or at least about 50 % by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or even at least about 55% by volume, etc., which may be at least about 45% by volume. According to still other embodiments, the content of the first resin matrix precursor component is about 63% by volume or less, or about 62% by volume or less, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or even about 57% by volume or less. The content of the first resin matrix precursor component is between any of the above minimum and maximum values (both end values are It should be understood that it can be any value (including). The content of the first resin matrix precursor component is within the range between any of the above minimum and maximum values (including both end values) and it should be further understood that it can be obtained.

[0036] According to still other embodiments, the first forming mixture may contain a specific content of perfluoropoly mer. For example, the content of the perfluoropolymer is at least about 46% by volume, or at least about 47% by volume, or at least about 48 % by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or even at least about 55% by volume, etc., and can be at least about 45% by volume and still be acceptable. According to still other embodiments, the content of the perfluoropolymer is about 62% by volume or less, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or even about 57% by volume or less with respect to the total volume of the first forming mixture, and can be up to about 63% by volume. It should be understood that the content of the perfluoropolymer can be any value between any of the above minimum and maximum values (including both end values) and it should be further understood that the content of the perfluoropolymer can be within the range between any of the above minimum and maximum values (including both end values).

[0037] According to still other embodiments, in the second step 120, a second resin matrix precursor component and a second ceramic filler precursor component are combined to form a second forming mixture. ​​It may further include a step, and the third step 130 may further include forming the second forming mixture into a second filled polymer layer that covers under the polyimide layer. .

[0038] According to a particular embodiment, the second ceramic filler precursor component may include a third filler precursor material having particular characteristics that can improve the performance of the dielectric substrate formed by the forming method 100.

[0039] According to a particular embodiment, the third filler precursor material may have a particular size distribution. For the purposes of the embodiments described herein, the particle size distribution of a material, for example, the particle size distribution of the third filler precursor material, may be described using any combination of the particle size distribution D values D , D 10 , D 50 and D 90 . The D value from the particle size distribution is defined as the particle size value at which 10% of the particles are smaller than that value and 90% of the particles are larger than that value. The D 10 value from the particle size distribution is defined as the particle size value at which 50% of the particles are smaller than that value and 50% of the particles are larger than that value. The D value from the particle size distribution is defined as the particle size value at which 90% of the particles are 50 smaller than that value and 10% of the particles are larger than that value. For the purposes of the embodiments described herein, the particle size measurement of a particular material is performed using laser diffraction spectroscopy. 90 smaller than that value and 10% of the particles are larger than that value. For the purposes of the embodiments described herein, the particle size measurement of a particular material is performed using laser diffraction spectroscopy.

[0040] According to a particular embodiment, the third filler precursor material may have a particular size distribution D 10 value . For example, the D 10The value is at least about 0.3 micrometers, or at least about 0.4 micrometers, or at least about 0.5 micrometers, or at least about 0.6 micrometers, or at least about 0.7 micrometers, or at least about 0.8 micrometers, or at least about 0.9 micrometers, or at least about 1.0 micrometers, or at least about 1.1 micrometers, or even at least about 1.2 micrometers, etc., at least about 0.2 micrometers may be sufficient. According to still other embodiments, the third filler material's D 10 is about 1.5 micrometers or less, or even about 1.4 micrometers or less, etc., may be about 1.6 micrometers or less. The third filler precursor material 's D 10 can be any value (including both end values) between any of the above minimum and maximum values It will be understood. The D of the third filler precursor material 10 is the minimum value as described above and It is further understood that it can be within the range (including both end values) between any of the maximum values be.

[0041] According to other embodiments, the third filler precursor material has a specific size distribution D 50 value to may have. For example, the D of the third filler precursor material 50 is at least about 0.6 micro meters, or at least about 0.7 micrometers, or at least about 0.8 micro meters, or at least about 0.9 micrometers, or at least about 1.0 micro meters, or at least about 1.1 micrometers, or at least about 1.2 micro Chrometer, or at least about 1.3 micrometers, or at least about 1.4 micro Meters, or at least about 1.5 micrometers, or at least about 1.6 micro Meters, or at least about 1.7 micrometers, or at least about 1.8 micro Meters, or at least about 1.9 micrometers, or at least about 2.0 micro Meters, or at least about 2.1 micrometers, or even at least about 2. It may be at least about 0.5 micrometers, such as 2 micrometers. Further According to other embodiments, D of the third filler material 50 Is about 2.6 micrometers or less , or about 2.5 micrometers or less, or even about 2.4 micrometers or less, etc. , may be about 2.7 micrometers or less. D of the third filler material 50 Is the above It can be understood that it can be any value between (including both end values) any of the minimum and maximum values of It will be understood that D of the third filler precursor material 50 Can be within the range between (including both end values) any of the above minimum and maximum values It will be further understood.

[0042] According to other embodiments, the third filler precursor material has a specific size distribution D 90 Value It may have. For example, D of the third filler precursor material 90 Is at least about 0.9 micro Meters, or at least about 1.0 micrometer, or at least about 1.1 micro Meters, or at least about 1.2 micrometers, or at least about 1.3 micro Meters, or at least about 1.4 micrometers, or at least about 1.5 micro Chrometer, or at least about 1.6 micrometers, or at least about 1.7 micro Chrometer, or at least about 1.8 micrometers, or at least about 1.9 micro Chrometer, or at least about 2.0 micrometers, or at least about 2.1 micro Chrometer, or at least about 2.2 micrometers, or at least about 2.3 micro Chrometer, or at least about 2.4 micrometers, or at least about 2.5 micro Chrometer, or at least about 2.6 micrometers, or even at least about 2. 7 micrometers, etc., may be at least about 0.8 micrometers. Further According to other embodiments, the D of the third filler material 90 is about 7.5 micrometers or less or about 7.0 micrometers or less, or about 6.5 micrometers or less, or about 6. 0 micrometers or less, or about 5.5 micrometers or less, or about 5.4 microm eter or less, or about 5.3 micrometers or less, or about 5.2 micrometers or less, or even about 5.1 micrometers or less, etc., may be about 8.0 micrometers or less and may be. The D of the third filler precursor material 90 is understood to be any value between any of the above minimum and maximum values (including both ends). The third filler pre cursor material's D is understood to be any value between any of the above minimum and maximum values (including both ends). The D of the third filler precursor material 90 is further understood to be within the range between any of the above minimum and maximum values (including both ends).

[0043] According to still other embodiments, the third filler precursor material may have a specific average particle size measured using laser diffraction spectroscopy. For example, the third filler precursor material's ​The average particle size may be about 10 micrometers or less, such as about 9 micrometers or less, or about 8 micrometers or less, or about 7 micrometers or less, or about 6 micrometers or less, or about 5 micrometers or less, or about 4 micrometers or less, or about 3 micrometers or less, or even about 2 micrometers or less. The average particle size of the third filler precursor material can be any value (including both end values) between any of the above values. It will be understood that the average particle size of the third filler precursor material can be within the range (including both end values) between any of the above values. or about 6 micrometers or less, or about 5 micrometers or less, or is about 4 micrometers or less, or about 3 micrometers or less, or even about 2 micrometers or less, etc. It will be understood that the average particle size of the third filler precursor material can be any value (including both end values) between any of the above values. It will be further understood that the average particle size of the third filler precursor material can be within the range (including both end values) between any of the above values.

[0044] According to yet another embodiment, the third filler precursor material can be described as having a specific particle size distribution span (PSDS). The PSDS of the third filler precursor material is equal to (D -D ) / D 90 -D 10 ) / D 50 , where D 90 is equal to the D particle size distribution measurement value of the third filler precursor 90 material, D 10 is equal to the D 10 particle size distribution measurement value of the third filler precursor material, and D 50 is equal to the D 50 particle size distribution measurement value of the third filler precursor material. For example, the PSDS of the third filler precursor material may be about 5 or less, such as about 4.5 or less, or about 4.0 or less, or about 3.5 or less, or about 3.0 or less, or even about 2.5 or less. It will be understood that the PSDS of the third filler precursor material can be any value (including both end values) between any of the above values. The PSD S of the third filler precursor material can be any value (including both end values) between any of the above values. or less, or about 3.5 or less, or about 3.0 or less, or even about 2.5 or less, etc. It will be understood that the PSDS of the third filler precursor material can be any value (including both end values) between any of the above values. The PSDS of the third filler precursor material can be within the range (including both end values) between any of the above values. It will be understood that the PSDS of the third filler precursor material can be any value (including both end values) between any of the above values. The PS of the third filler precursor material can be within the range (including both end values) between any of the above values. DS may further be understood to be within a range (including both end values) between any of the above values. be understood.

[0045] According to still other embodiments, the third filler precursor material may be described as having a specific average surface area measured using Brunauer-Emmett-Teller (BET) surface area analysis (nitrogen adsorption). For example, the third filler precursor material may be about 7.9 m / g or less, or about 7.5 m / g or less, or about 7.0 m 2 / g or less, or about 6 2 / g or less, or about 6.5 m 2 / g or less, or about 6.0 m .5 m 2 / g or less, or about 5.5 m 2 / g or less, or about 5. 2 0 m / g or less, or about 4.5 m 2 / g or less, or about 4.0 m 2 / g or less, or even about 2 3.5 m / g or less, etc., and may have an average surface area of about 10 m 2 / g or less. According to still other 2 embodiments, the third filler precursor material may have an average surface area of at least about 1.2 m / g, such as at least about 2.4 m 2 / g. It will be understood that the average surface area of the third filler precursor material can be any value (including both end values) between any of the above minimum and maximum values. It will be further understood that the average surface area of the third filler precursor material can be within a range (including both end values) between any of the above minimum and maximum values. at least about 1.2 m 2 / g. The average surface area of the third filler precursor material can be any value (including both end values) between any of the above minimum and maximum values. It will be understood. The average surface area of the third filler precursor material can be within a range (including both end values) between any of the above minimum and maximum values. It will be further understood.

[0046] According to other embodiments, the third filler precursor material may include a specific material. Specific According to an embodiment, the third filler precursor material may include a silica-based compound. According to still other embodiments, the third filler precursor material may consist of a silica-based compound. According to other embodiments, the third filler precursor material may include silica. According to still other embodiments, the third filler precursor material may consist of silica. .

[0047] According to still other embodiments, the second forming mixture may include a specific content of a second ceramic filler precursor component. For example, the content of the second ceramic filler precursor component may be at least about 31% by volume, or at least about 32% by volume, or at least about 33% by volume, or at least about 34% by volume, or at least about 35% by volume, or at least about 36% by volume, or at least about 37% by volume, or at least about 38% by volume, or at least about 39% by volume, or at least about 40% by volume , or at least about 41% by volume, or at least about 42% by volume, or at least about 43% by volume , or at least about 44% by volume, or at least about 45% by volume, or at least about 46% by volume , or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume , or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume , or at least about 53% by volume, or even at least about 54% by volume, and may be at least about 30% by volume. According to still other embodiments, the content of the second ceramic filler precursor component may be about 57% by volume or less, such as about 56% by volume or less, or even about 55% by volume or less. The second forming mixture may have a content of the second ceramic filler precursor component of about 57% by volume or less, such as about 56% by volume or less, or even about 55% by volume or less. The second forming mixture may have a content of the second ceramic filler precursor component of about 57% by volume or less, such as about 56% by volume or less, or even about 55% by volume or less. The second ceramic filler precursor component content may be about 57% by volume or less, such as about 56% by volume or less, or even about 55% by volume or less. The second forming mixture may have a content of the second ceramic filler precursor component of about 57% by volume or less, such as about 56% by volume or less, or even about 55% by volume or less. The second The content of the ceramic filler precursor component can be any value between the above-mentioned minimum and maximum values (including both end values). It will be understood that the content of the second ceramic filler precursor component can be within the range between any of the above-mentioned minimum and maximum values (including both end values). It will be further understood.

[0048] According to still other embodiments, the second ceramic filler precursor component can include a third filler precursor material with a specific content. For example, the content of the third filler precursor material can be at least about 81% by volume, or at least about 82% by volume, or at least about 83% by volume, or at least about 84% by volume, or at least about 85% by volume, or at least about 86% by volume, or at least about 87% by volume, or at least about 88% by volume, or at least about 89% by volume, or even at least about 90% by volume, etc., of the total volume of the second ceramic filler precursor component. According to still other embodiments, the content of the third filler precursor material can be about 99% by volume or less, or about 98% by volume or less, or about 97% by volume or less, or about 96% by volume or less, or about 95% by volume or less, or about 94% by volume or less, or about 93% by volume or less, or even about 92% by volume or less, etc., of the total volume of the second ceramic filler precursor component. It will be understood that the content of the third filler precursor material can be any value between any of the above-mentioned minimum and maximum values (including both end values). It will be further understood that the content of the third filler precursor material can be within the range between any of the above-mentioned minimum and maximum values (including both end values). It will be further understood. It will be understood that the content of the third filler precursor material can be any value between any of the above-mentioned minimum and maximum values (including both end values). It will be further understood that the content of the third filler precursor material can be within the range between any of the above-mentioned minimum and maximum values (including both end values). It will be further understood. It will be further understood.

[0049] According to still other embodiments, the second ceramic filler precursor component may include a fourth filler precursor material.

[0050] According to still other embodiments, the fourth filler precursor material may include a specific material. For example, the fourth filler precursor material can include a high dielectric constant ceramic material such as a ceramic material having a dielectric constant of at least about 14. According to specific embodiments, the fourth filler precursor material can include any high dielectric constant ceramic material such as TiO2, SrTiO3, ZrTi2O6, MgTiO3, Ca TiO3, BaTiO4, or any combination thereof. According to still other embodiments, the fourth filler precursor material may include TiO2. According to still other embodiments, the fourth filler precursor material may consist of TiO2.

[0051] According to still other embodiments, the second ceramic filler precursor component can include a fourth filler precursor material having a specific content. For example, the content of the fourth filler precursor material can be at least about 1 volume %, such as at least about 2 volume %, or at least about 3 volume %, or at least about 4 volume %, or at least about 5 volume %

[0052] According to still other embodiments, the second ceramic filler precursor component can include a fourth filler precursor material having a specific content. For example, the content of the fourth filler precursor material can be at least about 1 volume %, such as at least about 2 volume %, or at least about 3 volume %, or at least about 4 volume %, or at least about 5 volume % %, or at least about 6 volume %, or at least about 7 volume %, or at least about 8 volume %, or at least about 9 volume %, or at least about 10 volume %, etc., based on the total volume of the second ceramic filler precursor component. According to still other embodiments, the content of the fourth filler precursor material is about 19 volume % or less, or about 18 volume % or less, based on the total volume of the second ceramic filler precursor component. % or less, based on the total volume of the second ceramic filler precursor component. Less than or equal to about 17% by volume, or about 16% by volume, or about 15% by volume, or about 14% by volume, or about 13% by volume, or about 12% by volume, etc., up to about 20% by volume may be sufficient. It should be understood that the content of the fourth filler precursor material can be any value between any of the above minimum and maximum values (including both end values). The content of the fourth filler precursor material can be further understood to be within the range between any of the above minimum and maximum values (including both end values).

[0053] According to yet another embodiment, the second ceramic filler precursor component can include an amorphous material having a specific content For example, the second ceramic filler precursor component can include at least about 97%, or even at least about 98%, or still at least about 99%, etc., of amorphous material. It should be understood that the content of the amorphous material can be any value between any of the above values (including both end values). The content of the amorphous material can be further understood to be within the range between any of the above values (including both end values).

[0054] According to other embodiments, the second resin matrix precursor component may include a specific material For example, the second resin matrix precursor component may include a perfluoropolymer According to yet another embodiment, the second resin matrix precursor component may consist of a perfluoropolymer

[0055] According to yet another embodiment, the perfluoropolymer of the first resin precursor matrix component is a copolymer of tetrafluoroethylene (TFE), hexafluoropropylene ( ), etc. ​​​a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof may be included. According to other embodiments, the second resin matrix The perfluoropolymer of the precursor component is a copolymer of tetrafluoroethylene (TFE) , a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE ), or any combination thereof.

[0056] According to still other embodiments, the perfluoropolymer of the second resin matrix precursor component may include polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof . According to still other embodiments, the perfluoropolymer of the second resin matrix precursor component may consist of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof .

[0057] According to still other embodiments, the second forming mixture can include a specific content of the second resin matrix precursor component. For example, the content of the second resin matrix precursor component is at least about 46% by volume, or at least about 47 % by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or even at least about 55% by volume, etc. may be at least about 45% by volume. According to still other embodiments, the second resin ma The content of the matrix precursor component is about 63% by volume or less based on the total volume of the second forming mixture or about 62% by volume or less, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume % or less, or about 58% by volume or less, or even about 57% by volume or less. The content of the second resin matrix precursor component can be any value between any of the above minimum and maximum values (including both end values). It will be understood that the content of the second resin matrix precursor component can be within a range between any of the above minimum and maximum values (including both end values) Further understanding will be gained.

[0058] According to still other embodiments, the second forming mixture may include a specific content of perfluoropoly mer. For example, the content of the perfluoropolymer is at least about 46% by volume, or at least about 47% by volume, or at least about 48 % by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or even at least about 55% by volume, etc., and may be at least about 45% by volume. According to still other embodiments, the content of the perfluoropolymer is about 62% by volume or less, or about 61% by volume or less, or about 60% by volume % or less, or about 59% by volume or less, or about 58% by volume or less, or even about 57% by volume or less of the total volume of the second forming mixture, and may be about 63% by volume or less. It is understood that the content of the perfluoropolymer can be any value between any of the above minimum and maximum values (including both end values) % or less, or about 59% by volume or less, or about 58% by volume or less, or even about 57% by volume or less of the total volume of the second forming mixture, and may be about 63% by volume or less. It is understood that the content of the perfluoropolymer can be any value between any of the above minimum and maximum values (including both end values) Let it be. The content of the perfluoropolymer can be further understood to be within the range (including both end values) between any of the above minimum and maximum values.

[0059] Next, referring to an embodiment of a dielectric substrate formed according to forming method 100, FIG. 2 a includes a schematic view of a dielectric substrate 200. As shown in FIG. 2a, the dielectric substrate 200 includes a polyimide layer 202 and a first filled polymer layer 204 covering the polyimide layer. As shown in FIG. 2a, the first filled polymer layer 204 can include a first resin matrix component 210 and a first ceramic filler component 220.

[0060] According to a specific embodiment, the first ceramic filler component 220 can include a first filler material that can have specific properties capable of improving the performance of the dielectric substrate 20 0.

[0061] According to a specific embodiment, the first filler material of the first ceramic filler component 220 can have a specific size distribution. For the purposes of the embodiments described herein, the particle size distribution of the material, for example, the particle size distribution of the first filler material, can be described using any combination of particle size distribution D values D D D 10 D 50 and D 90 The D value from the particle size distribution can be defined as the particle size value at which 10% of the particles are smaller than that value and 90% of the particles are larger than that value. The D value from the particle size distribution is defined as the particle size value at which 50% of the particles are smaller than that value D 10 and 50% of the particles are larger than that value. The D value from the particle size distribution 50 and 50% of the particles are larger than that value. The D value from the particle size distribution 90 is defined as the particle size value such that 90% of the particles are smaller than that value and 10% of the particles are larger than that value. For the purposes of the embodiments described herein, the particle size measurement of a particular material is performed using laser diffraction spectroscopy. According to a particular embodiment, the first filler material of the first ceramic filler component 220 can have a particular size distribution D

[0062] value. For example, the D value of the first filler material can be at least about 0.3 micrometers, or at least about 0.4 micrometers, or at least about 0.5 micrometers, or at least about 0.6 micrometers, or at least about 0.7 micrometers, or at least about 0.8 micrometers, or at least about 0.9 micrometers, or at least about 1.0 micrometers, or at least about 1.1 micrometers, or even at least about 1.2 micrometers, such as at least about 0.2 micrometers. According to yet other embodiments, the D 10 of the first filler material can be about 1.6 micrometers or less, such as about 1.5 micrometers or less, or even about 1.4 micrometers or less. It will be understood that the D of the first filler material can be any value (including the end values) between any of the above minimum and maximum values. It will be further understood that the D 10 of the first filler material can be within the range (including the end values) between any of the above minimum and maximum values. According to other embodiments, the first filler material of the first ceramic filler component 220 can have a particular size distribution D value. For example, the D value of the first filler material can be at least about 0.3 micrometers, or at least about 0.4 micrometers, or at least about 0.5 micrometers, or at least about 0.6 micrometers, or at least about 0.7 micrometers, or at least about 0.8 micrometers, or at least about 0.9 micrometers, or at least about 1.0 micrometers, or at least about 1.1 micrometers, or even at least about 1.2 micrometers, such as at least about 0.2 micrometers. According to yet other embodiments, the D of the first filler material can be about 1.6 micrometers or less, such as about 1.5 micrometers or less, or even about 1.4 micrometers or less. It will be understood that the D of the first filler material can be any value (including the end values) between any of the above minimum and maximum values. It will be further understood that the D 10 of the first filler material can be within the range (including the end values) between any of the above minimum and maximum values. According to other embodiments, the D of the first filler material can be about 1.6 micrometers or less, such as about 1.5 micrometers or less, or even about 1.4 micrometers or less. It will be understood that the D 10 of the first filler material can be any value (including the end values) between any of the above minimum and maximum values. It will be further understood that the D of the first filler material can be within the range (including the end values) between any of the above minimum and maximum values. 10 of the first filler material can be within the range (including the end values) between any of the above minimum and maximum values. It will be further understood.

[0063] According to other embodiments, the first filler material of the first ceramic filler component 220 may have a specific size distribution D 50 value. For example, the D of the first filler material 50 is , at least about 0.6 micrometers, or at least about 0.7 micrometers, or is at least about 0.8 micrometers, or at least about 0.9 micrometers, or is at least about 1.0 micrometers, or at least about 1.1 micrometers, or is at least about 1.2 micrometers, or at least about 1.3 micrometers, or is at least about 1.4 micrometers, or at least about 1.5 micrometers, or is at least about 1.6 micrometers, or at least about 1.7 micrometers, or is at least about 1.8 micrometers, or at least about 1.9 micrometers, or is at least about 2.0 micrometers, or at least about 2.1 micrometers, or is further at least about 2.2 micrometers, etc., at least about 0.5 micrometer may be. According to still other embodiments, the D of the first filler material 50 is about 2 .6 micrometers or less, or about 2.5 micrometers or less, or further about 2.4 microns rometers or less, etc., may be about 2.7 micrometers or less. The D of the first filler - material 50 can be any value (including both end values) between any of the above minimum and maximum values. It will be understood that the D of the first filler material can be any value within the range (including both end values) between any of the above minimum and 50 maximum values. It will be further understood that.

[0064] According to other embodiments, the first filler material of the first ceramic filler component 220​ may have a specific size distribution D 90 value. For example, the D of the first filler material 90 is , at least about 0.9 micrometers, or at least about 1.0 micrometers, or is at least about 1.1 micrometers, or at least about 1.2 micrometers, or is at least about 1.3 micrometers, or at least about 1.4 micrometers, or is at least about 1.5 micrometers, or at least about 1.6 micrometers, or is at least about 1.7 micrometers, or at least about 1.8 micrometers, or is at least about 1.9 micrometers, or at least about 2.0 micrometers, or is at least about 2.1 micrometers, or at least about 2.2 micrometers, or is at least about 2.3 micrometers, or at least about 2.4 micrometers, or is at least about 2.5 micrometers, or at least about 2.6 micrometers, or is even at least about 2.7 micrometers or the like, at least about 0.8 micrometer tor. According to still other embodiments, the D of the first filler material 90 is about 7 .5 micrometers or less, or about 7.0 micrometers or less, or about 6.5 micrometers meter or less, or about 6.0 micrometers or less, or about 5.5 micrometers or less , or about 5.4 micrometers or less, or about 5.3 micrometers or less, or about 5. 2 micrometers or less, or even about 5.1 micrometers or less, etc., about 8.0 m icrometer or less. The D of the first filler material 90 is understood to be any value (including both end values) between any of the above minimum and maximum values The D of the first filler material 90 can be further understood to be within a range (including both end values) between any of the above minimum and maximum values.

[0065] According to yet other embodiments, the first filler material of the first ceramic filler component 220 may have a specific average particle size measured by laser diffraction spectroscopy. For example , the average particle size of the first filler material may be about 10 micrometers or less, such as about 9 micrometers or less, or about 8 micrometers or less, or about 7 micrometers or less, or about 6 micrometers or less, or about 5 micrometers or less, or about 4 micrometers or less, or about 3 micrometers or less, or even about 2 micrometers or less. It will be understood that the average particle size of the first filler material can be any value (including both end values) between any of the above values. It will be further understood that the average particle size of the first filler material can be within a range (including both end values) between any of the above values.

[0066] According to yet other embodiments, the first filler material of the first ceramic filler component 220 can be described as having a specific particle size distribution span (PSDS), where the PSDS is equal to (D - D 90 10 ) / D 50 , where D 90 is equal to the D particle size distribution measurement value of the first filler material, D 90 is equal to the D 10 particle size distribution measurement value of the first filler material, and D 10 is equal to the D particle size distribution measurement value of the first filler material. For example 50 50 ​​​​​​​​​​​​The PSDS of the first filler material is about 4.5 or less, or about 4.0 or less, or about 3.5 or less , or about 3.0 or less, or even about 2.5 or less, etc., and may be about 5 or less. The first filler material's PSDS can be any value (including both end values) between any of the above values . It should be understood that the PSDS of the first filler material may be within the range (including both end values) between any of the above values .

[0067] According to yet other embodiments, the first filler material of the first ceramic filler component 220 can be described as having a specific average surface area measured using Brunauer - Emmett - Teller (BET) surface area analysis (nitrogen adsorption ). For example, the first filler material has an average surface area of about 7.9 m 2 / g or less, or about 7.5 m 2 / g or less, or about 7. 0 m 2 / g or less, or about 6.5 m 2 / g or less, or about 6.0 m 2 / g or less, or about 5.5 m 2 / g or less, or about 5.0 m 2 / g or less, or about 4.5 m 2 / g or less, or about 4.0 m 2 / g or less, or even about 3.5 m 2 / g or less, etc., and may have an average surface area of about 10 m 2 / g or less. According to yet other embodiments, the first filler material may have an average surface area of at least about 1.2 m , such as at least about 2. 4 m 2 / g. The average surface area of the first filler 2 material can be any value (including both end values) between any of the above minimum and maximum values . It should be understood that it can be any value (including). The average surface area of the first filler material can be within the range (including both end values) between any of the minimum and maximum values described above. It should be further understood.

[0068] According to other embodiments, the first filler material of the first ceramic filler component 220 can include a specific material. According to a specific embodiment, the first filler material can include a silica-based compound. According to still other embodiments, the first filler material can consist of a silica-based compound. According to other embodiments, the first filler material can include silica. According to still other embodiments, the first filler material can consist of silica.

[0069] According to still other embodiments, the first filled polymer layer 204 can include a specific content of the first ceramic filler component 220. For example, the content of the ceramic filler component 2 20 is at least about 31 volume %, or at least about 32 volume %, or at least about 33 volume %, or at least about 34 volume %, or at least about 35 volume %, or at least about 36 volume %, or at least about 37 volume %, or at least about 38 volume %, or at least about 39 volume %, or at least about 40 volume %, or at least about 41 volume %, or at least about 42 volume %, or at least about 43 volume %, or at least about 44 volume %, or at least about 45 volume %, or at least about 46 volume %, or at least about 47 volume %, or at least about 48 volume %, or at least about 49 volume %, or at least about 50 volume %, or at least about 51 volume %, or at least about 52 volume %, or at least about 53 volume %, or at least about 54 volume %, or at least about 52% by volume, or at least about 53% by volume, or even at least about 54% by volume, etc., may be at least about 30% by volume. According to still other embodiments the content of the ceramic filler component 220 is relative to the total volume of the first filled polymer layer 204 and may be at most about 57% by volume, or even at most about 56% by volume, or even at most about 55% by volume, etc. It will be understood that the content of the ceramic filler component 220 can be any value between the above minimum and maximum values (including both end values). It will be further understood that the content of the ceramic filler component 220 can be within the range between any of the above minimum and maximum values (including both end values). the content of the ceramic filler component 220 can be within the range between any of the above minimum and maximum values (including both end values).

[0070] According to still other embodiments, the first ceramic filler component 220 can include a first filler material having a specific content . For example, the content of the first filler material is at least about 81% by volume, or at least at least about 82% by volume, or at least about 83% by volume, or at least about 84% by volume, or at least about 85% by volume, or at least about 86% by volume, or at least about 87% by volume , or at least about 88% by volume, or at least about 89% by volume, or even at least about 90% by volume, etc., may be at least about 80% by volume. According to still other embodiments the content of the first filler material is relative to the total volume of the first ceramic filler component 220 and may be at most about 99% by volume, or about 98% by volume, or about 97% by volume, or about 96 % by volume, or about 95% by volume, or about 94% by volume, or about 93% by volume, or even at most about... It may be 100% by volume or less, such as 92% by volume or less. The first filler material The content can be any value (including both end values) between any of the above minimum and maximum values. It will be understood that the content of the first filler material can be within the range between any of the above minimum and maximum values (including both end values).

[0071] According to yet another embodiment, the first ceramic filler component 220 can include a second filler material.

[0072] According to yet another embodiment, the second filler material of the first ceramic filler component 220 can include a specific material. For example, the second filler material can include a high dielectric constant ceramic material such as a ceramic material having a dielectric constant of at least about 14. According to a specific embodiment, the second filler material of the first ceramic filler component 220 can include any high dielectric constant ceramic material such as TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTi O4, or any combination thereof. It can include any high dielectric constant ceramic material such as TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTi O4, or any combination thereof.

[0073] According to yet another embodiment, the second filler material of the first ceramic filler component 220 can include TiO2. According to yet another embodiment, the second filler material may consist of TiO2.

[0074] According to yet another embodiment, the first ceramic filler component 220 can include a second filler material having a specific content. For example, the content of the second filler material is the first At least about 2 volume %, or at least about 3 volume %, or at least about 4 volume %, or at least about 5 volume %, or at least about 6 volume %, or at least about 7 volume %, or at least about 8 volume %, or at least about 9 volume %, or at least about 10 volume %, etc., of the total volume of the ceramic filler component 220 of 1 may be at least about 1 volume %. According to still other embodiments, the content of the second filler material may be about 19 volume % or less, or about 18 volume % or less, or about 17 volume % or less, or about 16 volume % or less, or about 15 volume % or less, or about 14 volume % or less, or about 13 volume % or less, or about 12 volume % or less, etc., of the total volume of the first ceramic filler component 220. According to still other embodiments, the content of the second filler material may be about 19 volume % or less, or about 18 volume % or less, or about 17 volume % or less, or about 16 volume % or less, or about 15 volume % or less, or about 14 volume % or less, or about 13 volume % or less, or about 12 volume % or less, etc., of the total volume of the first ceramic filler component 220. According to still other embodiments, the content of the second filler material may be about 19 volume % or less, or about 18 volume % or less, or about 17 volume % or less, or about 16 volume % or less, or about 15 volume % or less, or about 14 volume % or less, or about 13 volume % or less, or about 12 volume % or less, etc., of the total volume of the first ceramic filler component 220. According to still other embodiments, the content of the second filler material may be about 19 volume % or less, or about 18 volume % or less, or about 17 volume % or less, or about 16 volume % or less, or about 15 volume % or less, or about 14 volume % or less, or about 13 volume % or less, or about 12 volume % or less, etc., of the total volume of the first ceramic filler component 220. According to still other embodiments, the content of the second filler material may be about 19 volume % or less, or about 18 volume % or less, or about 17 volume % or less, or about 16 volume % or less, or about 15 volume % or less, or about 14 volume % or less, or about 13 volume % or less, or about 12 volume % or less, etc., of the total volume of the first ceramic filler component 220. According to still other embodiments, the content of the second filler material may be about 19 volume % or less, or about 18 volume % or less, or about 17 volume % or less, or about 16 volume % or less, or about 15 volume % or less, or about 14 volume % or less, or about 13 volume % or less, or about 12 volume % or less, etc., of the total volume of the first ceramic filler component 220. According to still other embodiments, the content of the second filler material may be about 19 volume % or less, or about 18 volume % or less, or about 17 volume % or less, or about 16 volume % or less, or about 15 volume % or less, or about 14 volume % or less, or about 13 volume % or less, or about 12 volume % or less, etc., of the total volume of the first ceramic filler component 220. It will be understood that the content of the second filler material can be any value between any of the above minimum and maximum values (including the end values). It will be further understood that the content of the second filler material can be within the range between any of the above minimum and maximum values (including the end values). It will be further understood that the content of the second filler material can be within the range between any of the above minimum and maximum values (including the end values). It will be further understood that the content of the second filler material can be within the range between any of the above minimum and maximum values (including the end values).

[0075] According to still other embodiments, the first ceramic filler component 220 can include an amorphous material with a specific content. For example, the first ceramic filler component 220 can include at least about 97% of an amorphous material, such as at least about 98% or even at least about 99%. For example, the first ceramic filler component 220 can include at least about 97% of an amorphous material, such as at least about 98% or even at least about 99%. It will be understood that the content of the amorphous material can be any value between any of the above values (including the end values). It will be further understood that the content of the amorphous material can be within the range between any of the above values (including the end values).

[0076] ​According to other embodiments, the first resin matrix component 210 may include specific materials. For example, the first resin matrix component 210 can include a perfluoropolymer. According to still other embodiments, the first resin matrix component 210 may consist of a perfluoropolymer.

[0077] According to still other embodiments, the perfluoropolymer of the first resin matrix component 210 may include a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene ( HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof. According to other embodiments, the perfluoropolymer of the first resin matrix component 210 may consist of a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE ), or any combination thereof. According to still other embodiments, the perfluoropolymer of the first resin matrix component 210 may include polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to still other embodiments, the perfluoropolymer of the first resin matrix component 210

[0078] may consist of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to still other embodiments, the perfluoropolymer of the first resin matrix component 210 may include polytetrafluoroethylene (PTFE), perfluoroalkyl oxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to still other embodiments, the perfluoropolymer of the first resin matrix component 210 may consist of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0079] According to yet other embodiments, the first filled polymer layer 204 can include a first resin matrix component 210. For example, the content of the first resin matrix component 210 can be at least about 46 volume %, or at least about 47 volume %, or at least about 48 volume %, or at least about 49 volume %, or at least about 50 volume %, or at least about 51 volume %, or at least about 52 volume %, or at least about 53 volume %, or at least about 54 volume %, or even at least about 55 volume %, etc., and can be at least about 45 volume %. According to yet other embodiments, the content of the first resin matrix component 210 is about 63 volume % or less, or about 62 volume % or less, or about 61 volume % or less with respect to the total volume of the first filled polymer layer 2 04, or about 60 volume % or less, or about 59 volume % or less, or about 58 volume % or less, or even about 57 volume % or less. It is understood that the content of the first resin matrix component 210 can be any value between any of the above minimum and maximum values (including both end values). It is further understood that the content of the first resin matrix component 210 can be within the range between any of the above minimum and maximum values (including both end values).

[0080] According to yet other embodiments, the first filled polymer layer 204 may include a specific content of perfluoro polymer. For example, the content of the perfluoropolymer is at least about 46 volume %, or at least about 47 volume %, or at least about 48 volume %, or at least about 49 volume %, or at least about 5 volume % with respect to the total volume of the first filled polymer layer 204, or at least about 5 0 volume %, or at least about 51 volume %, or at least about 52 volume %, or at least about 53 volume %, or at least about 54 volume %, or even at least about 55 volume % and so on , may be at least about 45 volume %. According to still other embodiments, the perfluoro polymer content is about 62 volume % or less, or about 61 volume % or less, or about 60 volume % or less, or about 59 volume % or less, or about 58 volume % or less or even about 57 volume % or less and so on, and may be about 63 volume % or less. The perflu oropolymer content can be understood to be any value (including both end values) between any of the above minimum and maximum values. The perfluoropolymer content can be further understood to be within the range (including both end values) between any of the above minimum and maximum values.

[0081] According to still other embodiments, the dielectric substrate 200 can include a specific porosity measured using X-ray diffraction. For example, the porosity of the substrate 200 is about 10 volume % or less, such as about 9 volume % or less, or about 8 volume % or less, or about 7 volume % or less, or about 6 volume % or less, or even about 5 volume % or less . It will be understood that the porosity of the dielectric substrate 200 can be any value (including both end values) between any of the above values. It will be further understood that the porosity of the dielectric substrate 200 can be within the range (including both end values) between any of the above values.

[0082] According to still other embodiments, the dielectric substrate 200 may have a specific average thickness. For example, the average thickness of the dielectric substrate 200 is at least about 15 micrometers, or at least At least about 20 micrometers, or at least about 25 micrometers, or at least about 30 micrometers, or at least about 35 micrometers, or at least about 40 micrometers, or at least about 45 micrometers, or at least about 50 micrometers, or at least about 55 micrometers, or at least about 60 micro meters, or at least about 65 micrometers, or at least about 70 micrometers or even at least about 75 micrometers, etc., may be at least about 10 micro meters. According to yet other embodiments, the average thickness of the dielectric substrate 200 is about 1800 micrometers or less, or about 1600 micrometers or less, or about 1 400 micrometers or less, or about 1200 micrometers or less, or about 1000 mic rometers or less, or about 800 micrometers or less, or about 600 micrometers or less, or about 400 micrometers or less, or about 200 micrometers or less, or about 190 micrometers or less, or about 180 micrometers or less, or about 170 mic rometers or less, or about 160 micrometers or less, or about 150 micrometers or less, or about 140 micrometers or less, or about 120 micrometers or less, or even about 100 micrometers or less, etc., may be about 2000 micrometers or less. It will be understood that the average thickness of the dielectric substrate 200 can be any value between any of the above minimum and maximum values (including both end values). It will be further understood that the average thickness of the dielectric substrate 200 (including both end values) can be within the range between any of the above minimum and maximum values.

[0083] ​​ According to yet another embodiment, the dielectric substrate 200 is measured in the 5 GHz range at 20% RH. For example, the dielectric may have a specific dissipation factor (Df) that is set to The substrate 200 has a thickness of about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or About 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0 about 0.005 or less, such as about 0.016 or less, or about 0.0015 or less, or about 0.0014 or less The dielectric loss tangent of the dielectric substrate 200 may be any of the above values. It will be understood that the dielectric constant of the dielectric substrate 200 may be any value between these two values ​​(including both values). The dissipation factor may be within a range between any of the above values ​​(inclusive). Let's understand further.

[0084] According to yet another embodiment, the dielectric substrate 200 is measured in the 5 GHz range and at 80% RH. For example, the dielectric substrate 200 may have a particular dissipation factor (Df) that is determined to be approximately 0. 004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less; or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0 having a dissipation factor of about 0.005 or less, such as .0015 or less, or about 0.0014 or less; The dielectric loss tangent of the dielectric substrate 200 may be any value between (including) any of the above values. It will be understood that the dielectric loss tangent of the dielectric substrate 200 can be any value, including the above values. It will be further understood that the range may be within any of the ranges (inclusive) of:

[0085] According to yet another embodiment, the dielectric substrate 200 is subjected to a thermal treatment in the range of 10 GHz and at 20% RH. It may have a specific dielectric tangent (Df) to be measured. For example, the dielectric substrate 200 may have a dielectric tangent of about 0 .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less , or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, etc., having a dielectric tangent of about 0.005 or less . The dielectric tangent of the dielectric substrate 200 can be understood to be any value between any of the above values (including the end values). It will be further understood that the dielectric tangent of the dielectric substrate 200 can be within the range between any of the above values (including the end values).

[0086] According to still other embodiments, the dielectric substrate 200 may have a specific dielectric tangent (Df) measured at 80% RH in the range of 10 GHz. For example, the dielectric substrate 200 may have a dielectric tangent of about 0 .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less . , or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, etc., having a dielectric tangent of about 0.005 or less . The dielectric tangent of the dielectric substrate 200 can be understood to be any value between any of the above values (including the end values). It will be further understood that the dielectric tangent of the dielectric substrate 200 can be within the range between any of the above values (including the end values).

[0087] According to still other embodiments, the dielectric substrate 200 may have a specific dielectric tangent (Df) measured at 20% RH in the range of 28 GHz. For example, the dielectric substrate 200 may have a dielectric tangent of about 0 .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less . ​​​​, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, etc., having a dielectric tangent of about 0.005 or less may be. It will be understood that the dielectric tangent of the dielectric substrate 200 can be any value between any of the above values (including both end values). The dielectric tangent of the dielectric substrate 200 will be further understood to be within a range between any of the above values (including both end values). It will be further understood that the dielectric tangent of the dielectric substrate 200 can be within a range between any of the above

[0088] According to still other embodiments, the dielectric substrate 200 may have a specific dielectric tangent (Df) measured at 80% RH in the range of 28 GHz. For example, the dielectric substrate 200 may have a dielectric tangent of about 0 .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less , or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, etc., having a dielectric tangent of about 0.005 or less may be. It will be understood that the dielectric tangent of the dielectric substrate 200 can be any value between any of the above values (including both end values). The dielectric tangent of the dielectric substrate 200 will be further understood to be within a range between any of the above values (including both end values). It will be further understood that the dielectric tangent of the dielectric substrate 200 can be within a range between any of the above values (including both end values).

[0089] According to still other embodiments, the dielectric substrate 200 may have a specific dielectric tangent (Df) measured at 20% RH in the range of 39 GHz. For example, the dielectric substrate 200 may have a dielectric tangent of about 0 .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less , or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, etc., having a dielectric tangent of about 0.005 or less may be. This is also acceptable. It should be understood that the dielectric loss tangent of the dielectric substrate 200 can be any value between any of the above values (including both end values). It should be further understood that the dielectric loss tangent of the dielectric substrate 200 can be within the range between any of the above values (including both end values). It should be further understood that the dielectric loss tangent of the dielectric substrate 200 can be within the range between any of the above values (including both end values).

[0090] According to still other embodiments, the dielectric substrate 200 may have a specific dielectric loss tangent (Df) measured at 80% RH in the range of 39 GHz. For example, the dielectric substrate 200 may have a dielectric loss tangent of about 0 .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less , or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, etc., that is, a dielectric loss tangent of about 0.005 or less. It should be understood that the dielectric loss tangent of the dielectric substrate 200 can be any value between any of the above values (including both end values). It should be further understood that the dielectric loss tangent of the dielectric substrate 200 can be within the range between any of the above values (including both end values). It should be further understood that the dielectric loss tangent of the dielectric substrate 200 can be within the range between any of the above values (including both end values). It should be further understood that the dielectric loss tangent of the dielectric substrate 200 can be within the range between any of the above values (including both end values).

[0091] According to still other embodiments, the dielectric substrate 200 may have a specific dielectric loss tangent (Df) measured at 20% RH in the range of 76 - 81 GHz. For example, the dielectric substrate 200 may have a dielectric loss tangent of about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.001 9 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, etc., that is, a dielectric loss tangent of about 0.005 or less. It should be understood that the dielectric loss tangent of the dielectric substrate 200 can be any value between any of the above values (including both end values). It should be understood that the dielectric loss tangent of the dielectric substrate 200 can be any value between any of the above values (including both end values). It should be understood that the dielectric loss tangent of the dielectric substrate 200 can be any value between any of the above values (including both end values). It is further understood that it may be within the range between any of the above values (including both end values). like.

[0092] According to yet another embodiment, the dielectric substrate 200 may have a specific dielectric tangent (Df) measured at 76 - 81 GHz and 80% RH. For example, the dielectric substrate 200 , may be about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.001 9 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, etc., and may have a dielectric tangent of about 0.005 or less. It will be understood that the dielectric tangent of the dielectric substrate 200 can be any value between any of the above values (including both end values). The dielectric tangent of the dielectric substrate 200 is understood to be able to be within the range between any of the above values (including both end values). It is further understood that it may be within the range between any of the above values (including both end values). like.

[0093] According to yet another embodiment, the dielectric substrate 200 may have a specific coefficient of thermal expansion measured according to the IPC - TM - 650 2.4. 24 Rev.C glass transition temperature and Z - axis thermal expansion by TMA. For example, the dielectric substrate 200 may have a coefficient of thermal expansion of about 80 ppm / °C or less.

[0094] According to another embodiment of the dielectric substrate formed according to the forming method 100, FIG. 2b includes a schematic diagram of the dielectric substrate 201. As shown in FIG. 2b, the dielectric substrate 201 may include a polyimide layer 202, a first filled polymer layer 204 covering the polyimide layer, and a second filled polymer layer 206 covering the bottom of the polyimide layer. As shown in FIG. 2b, ​​The second filled polymer layer 206 can include a second resin matrix component 230 and a second ceramic filler component 240.

[0095] According to certain embodiments, the second ceramic filler component 240 can include a third filler material having certain properties that can improve the performance of the dielectric substrate 201. It can be done.

[0096] According to certain embodiments, the third filler material of the second ceramic filler component 240 can have a specific size distribution. For the purposes of the embodiments described herein, the particle size distribution of a material, for example, the particle size distribution of the third filler material, can be described using any combination of the particle size distribution D values 10 D, 50 D, 90 and D. The D 10 value from the particle size distribution is defined as the particle size value at which 10% of the particles are smaller than that value and 90% of the particles are larger than that value. The 50 D value from the particle size distribution is defined as the particle size value at which 50% of the particles are smaller than that value and 50% of the particles are larger than that value. The 90 D value from the particle size distribution is defined as the particle size value at which 90% of the particles are smaller than that value and 10% of the particles are larger than that value. For the purposes of the embodiments described herein, the particle size measurement of a particular material is

[0097] performed using laser diffraction spectroscopy. material of the second ceramic filler component 240 can have a specific size distribution D 10 value. For example, the 10 is at least about 0.3 micrometers, or at least about 0.4 micrometers, or at least about 0.5 micrometers, or at least about 0.6 micrometers, or at least about 0.7 micrometers, or at least about 0.8 micrometers, or at least about 0.9 micrometers, or at least about 1.0 micrometers, or at least about 1.1 micrometers, or even at least about 1.2 micrometers and may be at least about 0.2 micrometers. In yet other embodiments according to, the D of the third filler material 10 is about 1.5 micrometers or less, or even about 1.4 micrometers or less and may be about 1.6 micrometers or less. The D of the third filler material 10 is understood to be any value between any of the above minimum and maximum values (including the end values ). The D of the third filler material 10 is understood to be within a range between any of the above minimum and maximum values (including the end values) and further understood to be within a range between any of the above minimum and maximum values (including the end values).

[0098] According to other embodiments, the third filler material of the second ceramic filler component 240 may have a specific size distribution D 50 value. For example, the D of the third filler material 50 is at least about 0.6 micrometers, or at least about 0.7 micrometers, or is at least about 0.8 micrometers, or at least about 0.9 micrometers, or is at least about 1.0 micrometers, or at least about 1.1 micrometers, or is at least about 1.2 micrometers, or at least about 1.3 micrometers, or is at least about 1.4 micrometers, or at least about 1.5 micrometers, or is at least about 1.6 micrometers, or at least about 1.7 micrometers, or is at least about 1.8 micrometers, or at least about 1.9 micrometers, or is at least about 2.0 micrometers, or at least about 2.1 micrometers, or is even at least about 0.5 micrometers such as at least about 2.2 micrometers, etc. According to yet other embodiments, D of the third filler material 50 is about 2 .6 micrometers or less, or about 2.5 micrometers or less, or even about 2.4 micr ometers or less, etc., may be about 2.7 micrometers or less. The D of the third fill er material 50 is understood to be any value (including both end values) between any of the above minimum and maximum values. The D of the third filler material is understood to be even within the range (including both end values) between any of the above minimum 50 and maximum values. It should be further understood that it may be.

[0099] According to other embodiments, the third filler material of the second ceramic filler component 240 may have a specific size distribution D 90 value. For example, D of the third filler material 90 is , at least about 0.9 micrometers, or at least about 1.0 micrometers, or is at least about 1.1 micrometers, or at least about 1.2 micrometers, or is at least about 1.3 micrometers, or at least about 1.4 micrometers, or is at least about 1.5 micrometers, or at least about 1.6 micrometers, or is at least about 1.7 micrometers, or at least about 1.8 micrometers, or is at least about 1.9 micrometers, or at least about 2.0 micrometers, or is at least about 2.1 micrometers, or at least about 2.2 micrometers, or is at least about 2.3 micrometers, or at least about 2.4 micrometers, or is at least about 2.5 micrometers, or at least about 2.6 micrometers, or is even at least about 0.8 micrometers, such as at least about 2.7 micrometers or more. According to still other embodiments, D of the third filler material 90 is about 7 .5 micrometers or less, or about 7.0 micrometers or less, or about 6.5 micrometers or less, or about 6.0 micrometers or less, or about 5.5 micrometers or less , or about 5.4 micrometers or less, or about 5.3 micrometers or less, or about 5. 2 micrometers or less, or even about 5.1 micrometers or less, etc., about 8.0 microns or less may be. D of the third filler material 90 is understood to be any value (including both end values) between any of the above minimum values and maximum values. . D of the third filler material 90 is further understood to be within the range (including both end values) between any of the above minimum values and maximum values.

[0100] According to still other embodiments, the third filler material of the second ceramic filler component 240 may have a specific average particle size measured according to laser diffraction spectroscopy. For example , the average particle size of the third filler material is about 9 micrometers or less, or about 8 micrometers Less than 1 Torr, or less than about 7 micrometers, or less than about 6 micrometers, or less than about 5 micrometers, or less than about 4 micrometers, or less than about 3 micrometers, or even less than about 2 micrometers, etc., may be less than about 10 micrometers. It will be understood that the average particle size of the third filler material can be any value (including both end values) between any of the above values. It will be further understood that the average particle size of the third filler material can be within the range (including both end values) between any of the above values.

[0101] According to yet another embodiment, the third filler material of the second ceramic filler component 240 can be described as having a specific particle size distribution span (PSDS), where the PSDS is equal to (D - D ) / D 90 - D 10 ) / D 50 where D 90 is equal to the D particle size distribution measurement value of the third filler material, D 90 is equal to the D 10 particle size distribution measurement value of the third filler material, and D 10 is equal to the D particle size distribution measurement value of the third filler material. For example, 50 the PSDS of the third filler material can be less than about 4.5, or less than about 4.0, or less than about 3.5 50 , or less than about 3.0, or even less than about 2.5, etc., may be less than about 5. The PSDS of the third filler material can be any value (including both end values) between any of the above values. It will be understood that the PSDS of the third filler material can be within the range (including both end values) between any of the above values.

[0102] According to yet other embodiments, the third filler of the second ceramic filler component 240 material can be described as having a specific average surface area measured using Brunauer-Emmett-Teller (BET) surface area analysis (nitrogen adsorption). For example, the third filler material can have an average surface area of about 9.9 m 2 / g or less, or about 9.5 m 2 / g or less, or about 9.0 m 2 / g or less, or about 8.5 m 2 / g or less, or about 8.0 m 2 / g or less, or about 7.5 m 2 / g or less, or about 7.0 m 2 / g or less, or about 6.5 m 2 / g or less, or about 6.0 m 2 / g or less, or about 5.5 m 2 / g or less, or about 5.0 m 2 / g or less, or about 4 .5 m 2 / g or less, or about 4.0 m 2 / g or less, or even about 3.5 m 2 / g or less, etc., and can have an average surface area of about 10 m 2 / g or less. According to yet other embodiments, the third filler material can have an average surface area of at least about 2.4 m 2 / g, such as at least about 1.2 m 2 / g. It will be understood that the average surface area of the third filler material can be any value (including both end values) between any of the above minimum and maximum values. It will be further understood that the average surface area of the third filler material can be within the range (including both end values) between any of the above minimum and maximum values.

[0103] According to other embodiments, the third filler material of the second ceramic filler component 240 can include a specific material. According to certain embodiments, the third filler material can include a silica-based compound. According to still other embodiments, the third filler material may consist of a silica-based compound. According to other embodiments, the third filler material can include si lica. According to still other embodiments, the third filler material may consist of silica .

[0104] According to still other embodiments, the first filled polymer layer 204 can include a specific content of a second ceramic filler component 240. For example, the content of the second ceramic filler component 240 is at least about 31% by volume, or at least about 32% by volume, or at least about 33% by volume, or at least about 34% by volume, or at least about 35% by volume, or at least about 36% by volume, or at least about 37% by volume, or at least about 38% by volume, or at least about 39% by volume with respect to the total volume of the second ceramic filler component 240, or at least about 40% by volume, or at least about 41% by volume, or at least about 42% by volume, or at least about 43% by volume, or at least about 44% by volume, or at least about 4 5% by volume, or at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume or at least about 52% by volume or at least about 53% by volume, or at least about 54% by volume, etc., and can be at least about 30% by volume. According to still other embodiments, the content of the second ceramic filler component 240 is about 56% by volume or less, or even about 55% by volume or less, etc., with respect to the total volume of the first filled polymer layer 204, about 57% by volume or less. % It may be as follows. It will be understood that the content of the ceramic filler component 220 can be any value (including both end values) between any of the above minimum and maximum values. It will be further understood that the content of the ceramic filler component 220 can be within the range (including both end values) between any of the above minimum and maximum values.

[0105] According to still other embodiments, the second ceramic filler component 240 can include a third filler material having a specific content. For example, the content of the third filler material is at least about 81% by volume, or at least about 82% by volume, or at least about 83% by volume, or at least about 84% by volume, or at least about 85% by volume, or at least about 86% by volume, or at least about 87% by volume, or at least about 88% by volume, or at least about 89% by volume, or even at least about 90% by volume, etc., and may be at least about 80% by volume. According to still other embodiments, the content of the third filler material is about 99% by volume or less, or about 98% by volume or less, or about 97% by volume or less, or about 96% by volume or less, or about 95% by volume or less, or about 94% by volume or less, or about 93% by volume or less, or even about 92% by volume or less, etc., and may be about 100% by volume or less with respect to the total volume of the second ceramic filler component 240. It will be understood that the content of the third filler material can be any value (including both end values) between any of the above minimum and maximum values. It will be further understood that the content of the third filler material can be within the range (including both end values) between any of the above minimum and maximum values.

[0106] According to still other embodiments, the second ceramic filler component 240 can include a fourth filler material.

[0107] According to still other embodiments, the fourth filler material of the second ceramic filler component 240 can include certain materials. For example, the fourth filler material can include a high dielectric constant ceramic material such as a ceramic material having a dielectric constant of at least about 14. According to certain embodiments, the fourth filler material of the second ceramic filler component 240 can include any high dielectric constant ceramic material such as TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTi O4, or any combination thereof. According to still other embodiments, the fourth filler material of the second ceramic filler component 240 can include TiO2. According to still other embodiments, the fourth filler material

[0108] can consist of TiO2. According to still other embodiments, the second ceramic filler component 240 can include a fourth filler material in a specific content. For example, the content of the fourth filler material can be at least about 1 volume %, such as at least about 2 volume %, or at least about 3 volume %, or at least about 4 volume %, or at least about 5 volume %, or at least about 6 volume %, or at least about 7 volume %, or at least about 8 volume %, or at least about 9 volume %, or at least about 10 volume % with respect to the total volume of the second ceramic filler component 240. According to still other embodiments, the content of the fourth filler material is the second ceramic filler

[0109] According to still other embodiments, the second ceramic filler component 240 can include a fourth filler material in a specific content. For example, the content of the fourth filler material can be at least about 1 volume %, such as at least about 2 volume %, or at least about 3 volume %, or at least about 4 volume %, or at least about 5 volume %, or at least about 6 volume %, or at least about 7 volume %, or at least about 8 volume %, or at least about 9 volume %, or at least about 10 volume % with respect to the total volume of the second ceramic filler component 240. According to still other embodiments, the content of the fourth filler material is the second ceramic filler component 240, and can be at least about 1 volume %, such as at least about 2 volume %, or at least about 3 volume %, or at least about 4 volume %, or at least about 5 volume %, or at least about 6 volume %, or at least about 7 volume %, or at least about 8 volume %, or at least about 9 volume %, or at least about 10 volume %. According to still other embodiments, the content of the fourth filler material is the second ceramic filler component 240, and can be at least about 1 volume %, such as at least about 2 volume %, or at least about 3 volume %, or at least about 4 volume %, or at least about 5 volume %, or at least about 6 volume %, or at least about 7 volume %, or at least about 8 volume %, or at least about 9 volume %, or at least about 10 volume %. According to still other embodiments, the content of the fourth filler material is the second ceramic filler component 240, and can be at least about 1 volume %, such as at least about 2 volume %, or at least about 3 volume %, or at least about 4 volume %, or at least about 5 volume %, or at least about 6 volume %, or at least about 7 volume %, or at least about 8 volume %, or at least about 9 volume %, or at least about 10 volume %. According to still other embodiments, the content of the fourth filler material is the second ceramic filler component 240, and can be at least about 1 volume %, such as at least about 2 volume %, or at least about 3 volume %, or at least about 4 volume %, or at least about 5 volume %, or at least about 6 volume %, or at least about 7 volume %, or at least about 8 volume %, or at least about 9 volume %, or at least about 10 volume %. According to still other embodiments, the content of the fourth filler material is the second ceramic filler component 240, and can be at least about 1 volume %, such as at least about 2 volume %, or at least about 3 volume %, or at least about 4 volume %, or at least about 5 volume %, or at least about 6 volume %, or at least about 7 volume %, or at least about 8 volume %, or at least about 9 volume %, or at least about 10 volume %. According to still other embodiments, the content of the fourth filler material is the second ceramic filler About 19% by volume or less, or about 18% by volume or less, or about 1 7% by volume or less, or about 16% by volume or less, or about 15% by volume or less, or about 14% by volume or less; or may be about 20% by volume or less, such as about 13% by volume or less, or about 12% by volume or less. The content of the fourth filler material is between the above minimum and maximum values ​​(both It will be understood that the content of the fourth filler material may be any value (including any extreme value). may be within a range between any of the above minimum and maximum values ​​(inclusive) will be further understood.

[0110] According to yet another embodiment, the second ceramic filler component 240 has a particular content For example, the second ceramic filler component 240 may include at least one amorphous material. At least about 97% amorphous material, such as at least about 98% or even at least about 99% The content of amorphous material may be any value between (and including) any of the values ​​above. It will be understood that the content of amorphous material may be any value, including any of the values ​​above. It will be further understood that the range may be within any of the above (inclusive) limits.

[0111] According to other embodiments, the second resin matrix component 230 may include certain materials. For example, the second resin matrix component 230 may include a perfluoropolymer. According to yet another embodiment, the second resin matrix component 230 is a perfluoro The insulating layer may be made of a copolymer.

[0112] According to yet another embodiment, the second resin matrix component 230 is a perfluoropoly The mer may include a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene ( HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof. According to other embodiments, the perfluoropolymer of the second resin matrix component 230 may consist of a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene ( HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof. According to still other embodiments, the perfluoropolymer of the second resin matrix component 230 may include polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to still other embodiments, the perfluoropolymer of the second resin matrix component 230

[0113] may consist of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to still other embodiments, the second filled polymer layer 206 may include a specific content of the second resin matrix component 230. For example, the content of the second resin matrix component 230 may be at least about 46 volume %, or at least about 47 volume %, or at least about 48 volume %, or at least about 4 9 volume %, or at least about 50 volume %, or at least about 51 volume %, or at least about, based on the total volume of the second filled polymer layer 206. According to still other embodiments, the second filled polymer layer 206 may consist of a specific content of the second resin matrix component 230.

[0114] According to still other embodiments, the second filled polymer layer 206 may include a specific content of the second resin matrix component 230. For example, the content of the second resin matrix component 230 may be at least about 46 volume %, or at least about 47 volume %, or at least about 48 volume %, or at least about 4 9 volume %, or at least about 50 volume %, or at least about 51 volume %, or at least about 52 volume %, or at least about 53 volume %, or at least about 54 volume %, or at least about 5 About 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or even It may be at least about 45% by volume, such as at least about 55% by volume. In still other embodiments According to the form, the content of the second resin matrix component 230 is such that the second filled polymer layer 2 is about 63% by volume or less, or about 62% by volume or less, or about 61% by volume or less with respect to the total volume of 06, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or even about 57% by volume or less. It is understood that the content of the second resin matrix component 230 can be any value between the above minimum and maximum values (including both end values). It is further understood that the content of the second resin matrix component 230 can be within the range between any of the above minimum and maximum values (including both end values).

[0115] In still other embodiments, the second filled polymer layer 206 may contain a specific content of perfluoro polymer. For example, the content of the perfluoropolymer is at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 5 0% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or even at least about 55% by volume, etc. It may be at least about 45% by volume. In still other embodiments, the content of the perfluoropolymer is about 62% by volume or less with respect to the total volume of the second filled polymer layer 206, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or about 57% by volume or less. It may be 63% by volume or less, such as 57% by volume or less, or even less. Perflu The content of the perfluoropolymer can be any value between any of the above minimum and maximum values (including both end values). It will be understood that the content of the perfluoropolymer can be within the range between any of the above minimum and maximum values (including both end values). It will be further understood that the content of the perfluoropolymer can be within the range between any of the above minimum and maximum values (including both end values).

[0116] According to yet another embodiment, the dielectric substrate 201 can have a specific porosity measured using X-ray diffraction. For example, the porosity of the substrate 200 can be 10% by volume or less, such as 9% by volume or less, or 8% by volume or less, or 7% by volume or less, or 6% by volume or less, or even 5% by volume or less. It will be understood that the porosity of the dielectric substrate 201 can be any value between any of the above values (including both end values). It will be further understood that the porosity of the dielectric substrate 201 can be within the range between any of the above values (including both end values). It will be understood that the porosity of the dielectric substrate 201 can be any value between any of the above values (including both end values). It will be further understood that the porosity of the dielectric substrate 201 can be within the range between any of the above values (including both end values).

[0117] According to yet another embodiment, the dielectric substrate 201 may have a specific average thickness. For example, the average thickness of the dielectric substrate 201 can be at least about 15 micrometers, or at least about 20 micrometers, or at least about 25 micrometers, or at least about 30 micrometers, or at least about 35 micrometers, or at least about 40 micrometers, or at least about 45 micrometers, or at least about 50 micrometers, or at least about 55 micrometers, or at least about 60 micrometers, or at least about 65 micrometers, or at least about 70 micrometers. ​​​​​​​​​It may be at least about 10 micrometers, such as a meter, or even at least about 75 micrometers. According to still other embodiments, the average thickness of the dielectric substrate 201 is about 1800 micrometers or less, or about 1600 micrometers or less, or about 1 400 micrometers or less, or about 1200 micrometers or less, or about 1000 micro meters or less, or about 800 micrometers or less, or about 600 micrometers or less, or about 400 micrometers or less, or about 200 micrometers or less, or about 190 micrometers or less, or about 180 micrometers or less, or about 170 micro meters or less, or about 160 micrometers or less, or about 150 micrometers or less, or about 140 micrometers or less, or about 120 micrometers or less, or even about 100 micrometers or less, etc., may be about 2000 micrometers or less. It will be understood that the average thickness of the dielectric substrate 201 can be any value (including both end values) between any of the above minimum and maximum values. It will be further understood that the average thickness of the dielectric substrate 201 can be within the range (including both end values) between any of the above minimum and maximum values.

[0118] According to still other embodiments, the dielectric substrate 201 may have a specific dielectric tangent (Df) measured at 5 GHz and 20% RH. For example, the dielectric substrate 201 has a dielectric tangent of about 0. 004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0 .0015 or less, or about 0.0014 or less, etc., and has a dielectric tangent of about 0.005 or less. is also acceptable. It should be understood that the dielectric loss tangent of the dielectric substrate 201 can be any value between any of the above values (including both end values). It should be further understood that the dielectric loss tangent of the dielectric substrate 201 can be within the range between any of the above values (including both end values).

[0119] According to still other embodiments, the dielectric substrate 201 may have a specific dielectric loss tangent (Df) measured at 80% RH in the range of 5 GHz. For example, the dielectric substrate 201 may have a dielectric loss tangent of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It should be understood that the dielectric loss tangent of the dielectric substrate 201 can be any value between any of the above values (including both end values). It should be further understood that the dielectric loss tangent of the dielectric substrate 201 can be within the range between any of the above values (including both end values). is also acceptable. It should be understood that the dielectric loss tangent of the dielectric substrate 201 can be any value between any of the above values (including both end values). It should be further understood that the dielectric loss tangent of the dielectric substrate 201 can be within the range between any of the above values (including both end values).

[0120] According to still other embodiments, the dielectric substrate 201 may have a specific dielectric loss tangent (Df) measured at 20% RH in the range of 10 GHz. For example, the dielectric substrate 201 may have a dielectric loss tangent of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It should be understood that the dielectric loss tangent of the dielectric substrate 201 can be any value between any of the above values (including both end values). is also acceptable. It should be understood that the dielectric loss tangent of the dielectric substrate 201 can be any value between any of the above values (including both end values). It should be further understood that the dielectric loss tangent of the dielectric substrate 201 can be within the range between any of the above values (including both end values). ​​​​​​​It will be further understood that it may be within a range (including both end values) between any of the values.

[0121] According to yet other embodiments, the dielectric substrate 201 may have a specific dielectric tangent (Df) measured at 80% RH in the range of 10 GHz. For example, the dielectric substrate 201 may have a dielectric tangent of about 0 .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less , or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, etc., and may have a dielectric tangent of about 0.005 or less. It will be understood that the dielectric tangent of the dielectric substrate 201 may be any value between any of the above values (including both end values). It will be further understood that the dielectric tangent of the dielectric substrate 201 may be within a range (including both end values) between any of the above values. It will be further understood that it may be within a range (including both end values) between any of the values.

[0122] According to yet other embodiments, the dielectric substrate 201 may have a specific dielectric tangent (Df) measured at 20% RH in the range of 28 GHz. For example, the dielectric substrate 201 may have a dielectric tangent of about 0 .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less , or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, etc., and may have a dielectric tangent of about 0.005 or less. It will be understood that the dielectric tangent of the dielectric substrate 201 may be any value between any of the above values (including both end values). It will be understood that the dielectric tangent of the dielectric substrate 201 may be within a range (including both end values) between any of the above values. It will be further understood that it may be within a range (including both end values) between any of the values.

[0123] According to yet another embodiment, the dielectric substrate 201 may have a specific dielectric tangent (Df) measured at 80% RH in the range of 28 GHz. For example, the dielectric substrate 201 may have a dielectric tangent of about 0 .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less , or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, etc., having a dielectric tangent of about 0.005 or less. It will be understood that the dielectric tangent of the dielectric substrate 201 can be any value between any of the above values (including the end values). It will be further understood that the dielectric tangent of the dielectric substrate 201 can be within a range between any of the above values (including the end values). 0.0015 or less, or about 0.0014 or less, etc., having a dielectric tangent of about 0.005 or less. It will be understood that the dielectric tangent of the dielectric substrate 201 can be any value between any of the above values (including the end values). It will be further understood that the dielectric tangent of the dielectric substrate 201 can be within a range between any of the above values (including the end values). According to yet another embodiment, the dielectric substrate 201 may have a specific dielectric tangent (Df) measured at 20% RH in the range of 39 GHz. For example, the dielectric substrate 201 may have a dielectric tangent of about 0 .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less , or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about

[0124] According to yet another embodiment, the dielectric substrate 201 may have a specific dielectric tangent (Df) measured at 80% RH in the range of 39 GHz. For example, the dielectric substrate 201 may have a dielectric tangent of about 0 .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less , or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, etc., having a dielectric tangent of about 0.005 or less. It will be understood that the dielectric tangent of the dielectric substrate 201 can be any value between any of the above values (including the end values). It will be further understood that the dielectric tangent of the dielectric substrate 201 can be within a range between any of the above values (including the end values). 0.0015 or less, or about 0.0014 or less, etc., having a dielectric tangent of about 0.005 or less. It will be understood that the dielectric tangent of the dielectric substrate 201 can be any value between any of the above values (including the end values). It will be further understood that the dielectric tangent of the dielectric substrate 201 can be within a range between any of the above values (including the end values). According to yet another embodiment, the dielectric substrate 201 may have a specific dielectric tangent (Df) measured at 80% RH in the range of 39 GHz. For example, the dielectric substrate 201 may have a dielectric tangent of about 0 .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less

[0125] According to yet another embodiment, the dielectric substrate 201 may have a specific dielectric tangent (Df) measured at 80% RH in the range of 39 GHz. For example, the dielectric substrate 201 may have a dielectric tangent of about 0 .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less Less than or equal to about 0.004, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less , or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, etc., having a dielectric tangent of about 0.005 or less may be. It will be understood that the dielectric tangent of the dielectric substrate 201 can be any value between any of the above values (including the end values). The dielectric tangent of the dielectric substrate 201 will be further understood to be within a range between any of the above values (including the end values). It will be understood that the dielectric tangent of the dielectric substrate 201 can be any value between any of the above values (including the end values). The dielectric tangent of the dielectric substrate 201 will be further understood to be within a range between any of the above values (including the end values). It will be further understood that the dielectric tangent of the dielectric substrate 201 can be within a range between any of the above values (including the end values).

[0126] According to still other embodiments, the dielectric substrate 201 may have a specific dielectric tangent (Df) measured at 76 - 81 GHz and 20% RH. For example, the dielectric substrate 201 may have a dielectric tangent of about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.001 9 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, etc., of about 0.005 or less It will be understood that the dielectric tangent of the dielectric substrate 201 can be any value between any of the above values (including the end values). The dielectric tangent of the dielectric substrate 201 will be further understood to be within a range between any of the above values (including the end values). It will be understood that the dielectric tangent of the dielectric substrate 201 can be any value between any of the above values (including the end values). The dielectric tangent of the dielectric substrate 201 will be further understood to be within a range between any of the above values (including the end values). It will be further understood that the dielectric tangent of the dielectric substrate 201 can be within a range between any of the above values (including the end values). It will be further understood that the dielectric tangent of the dielectric substrate 201 can be within a range between any of the above values (including the end values). It will be further understood that the dielectric tangent of the dielectric substrate 201 can be within a range between any of the above values (including the end values).

[0127] According to still other embodiments, the dielectric substrate 201 may have a specific dielectric tangent (Df) measured at 76 - 81 GHz and 80% RH. For example, the dielectric substrate 201 may have a dielectric tangent of about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.001 9 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, 9 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or a dielectric tangent of about 0.005 or less, such as about 0.0015 or less, or about 0.0014 or less, etc. The dielectric substrate 201 may have a dielectric tangent. It should be understood that the dielectric tangent of the dielectric substrate 201 can be any value between any of the above values (including both end values). It should be further understood that the dielectric tangent of the dielectric substrate 201 can be within a range between any of the above values (including both end values).

[0128] According to still other embodiments, the dielectric substrate 201 may have a specific thermal expansion coefficient measured according to the glass transition temperature of IPC-TM-650 2.4. 24 Rev.C and the Z-axis thermal expansion by TMA. For example, the dielectric substrate 201 may have a thermal expansion coefficient of about 80 ppm / °C or less.

[0129] The filled polymer layer described with reference to the embodiments of the dielectric substrate disclosed herein may be in direct contact with the polyimide layer, or there may be an additional layer between the filled polymer layer and the polyimide layer. For example, a fluoropolymer layer (filled or unfilled) may be disposed between the polyimide layer of the dielectric substrate and the filled polymer layer.

[0130] Next, embodiments of a copper-clad laminate that may include the dielectric substrate described herein will be described. Such additional embodiments described herein generally relate to a copper-clad laminate that can include a copper foil layer and a dielectric substrate covering the copper foil layer. According to a particular embodiment, the dielectric substrate can include a polyimide layer and a first filled polymer layer covering the polyimide layer, and the first filled polymer layer can include a first resin matrix component and a first ​​​​ and a ceramic filler component.

[0131] Referring now to the method of forming a copper clad laminate, FIG. 3 includes a simplified diagram illustrating a method 300 for forming a copper clad laminate, according to an embodiment. According to this embodiment, the method 300 includes a first step 310 of providing a copper foil layer; and a second step 320 of forming a dielectric substrate overlying the foil layer. According to certain embodiments, forming the dielectric substrate comprises forming a first resin matrix precursor composition. and a first ceramic filler precursor component to form a first forming mixture. and forming the first forming mixture into a first filled polymer layer overlying the polyimide layer. forming a dielectric substrate.

[0132] According to certain embodiments, the first ceramic filler precursor component is formed by the method of forming 300 The first step may have certain properties that can improve the performance of the copper clad laminate formed by The filler precursor material may include:

[0133] According to a particular embodiment, the first filler precursor material has a particular size distribution. For purposes of the embodiments described herein, the particle size distribution of the material, e.g., the first The particle size distribution of the filler precursor material is expressed as the particle size distribution D value D 10 , D 50 and D. 90 Any pair of The particle size distribution can be described using a combination of D 10 The value is the value at which 10% of the particles are greater than that value. It is defined as the particle size value smaller than the particle size distribution, and 90% of the particles are larger than that value. D 50The value is such that 50% of the particles are smaller than the value and 50% of the particles are larger than the value is defined as a particle size value. D from the particle size distribution 90 The value is such that 90% of the particles are smaller than the value and 10% of the particles are larger than the value, and is defined as a particle size value. For the purposes of the embodiments described herein the particle size measurement of a particular material is performed using laser diffraction spectroscopy is performed

[0134] According to a particular embodiment, the first filler precursor material may have a particular size distribution D 10 value For example, the D of the first filler precursor material 10 is at least about 0.3 micrometers, or at least about 0.4 micrometers, or at least about 0.5 micrometers, or at least about 0.6 micrometers, or at least about 0.7 micrometers, or at least about 0.8 micrometers, or at least about 0.9 micrometers, or at least about 1.0 micrometers, or at least about 1.1 micrometers, or even at least about 1.2 micrometers, etc., and may be at least about 0.2 micrometers. According to still other embodiments, the D of the first filler material may be 10 about 1.5 micrometers or less, or even about 1.4 micrometers or less etc., and may be about 1.6 micrometers or less. It will be understood that the D of the first filler precursor material may be 10 any value (including both end values) between any of the above minimum and maximum values It will be further understood that the D of the first filler precursor material 10 may be within the range (including both end values) between any of the above minimum and maximum values Ugh.

[0135] According to other embodiments, the first filler precursor material may have a specific size distribution D 50 value For example, the D of the first filler precursor material 50 may be at least about 0.6 micro meter, or at least about 0.7 micrometer, or at least about 0.8 micro meter, or at least about 0.9 micrometer, or at least about 1.0 micro meter, or at least about 1.1 micrometer, or at least about 1.2 micro meter, or at least about 1.3 micrometer, or at least about 1.4 micro meter, or at least about 1.5 micrometer, or at least about 1.6 micro meter, or at least about 1.7 micrometer, or at least about 1.8 micro meter, or at least about 1.9 micrometer, or at least about 2.0 micro meter, or at least about 2.1 micrometer, or even at least about 2. 2 micrometers, etc., may be at least about 0.5 micrometer. Further According to other embodiments, the D of the first filler material 50 may be about 2.6 micrometers or less , or about 2.5 micrometers or less, or even about 2.4 micrometers or less, etc., may be about 2.7 micrometers or less. The D of the first filler precursor material 50 is any value between any of the above minimum and maximum values (including both ends) and can be understood. It will be further understood that the D of the first filler precursor material 50 is within the range between any of the above minimum and maximum values (including both ends).

[0136] According to other embodiments, the first filler precursor material may have a specific size distribution D 90 value For example, the D of the first filler precursor material 90 may be at least about 0.9 micro meter, or at least about 1.0 micrometer, or at least about 1.1 micro meter, or at least about 1.2 micrometer, or at least about 1.3 micro meter, or at least about 1.4 micrometer, or at least about 1.5 micro meter, or at least about 1.6 micrometer, or at least about 1.7 micro meter, or at least about 1.8 micrometer, or at least about 1.9 micro meter, or at least about 2.0 micrometer, or at least about 2.1 micro meter, or at least about 2.2 micrometer, or at least about 2.3 micro meter, or at least about 2.4 micrometer, or at least about 2.5 micro meter, or at least about 2.6 micrometer, or even at least about 2. 7 micrometers, etc., may be at least about 0.8 micrometer. Further According to other embodiments, the D of the first filler material 90 is about 7.5 micrometers or less , or about 7.0 micrometers or less, or about 6.5 micrometers or less, or about 6. 0 micrometers or less, or about 5.5 micrometers or less, or about 5.4 micrometers or less, or about 5.3 micrometers or less, or about 5.2 micrometers or less, or even about 5.1 micrometers or less, etc., may be about 8.0 micrometers or less The D of the first filler precursor material 90can be any value between any of the above minimum and maximum values (including both end values). Before the first filler it will be understood that the body material D is within the range between any of the above minimum and maximum values (including both end values) 90 and it will be further understood that the body material D is within the range.

[0137] According to yet other embodiments, the first filler precursor material may have a specific average particle size measured using laser diffraction spectroscopy. For example, the average particle size of the first filler precursor material may be about 10 micrometers or less, such as about 9 micrometers or less, or about 8 micrometers or less, or about 7 micrometers or less, or about 6 micrometers or less, or about 5 micrometers or less, or about 4 micrometers or less, or about 3 micrometers or less, or even about 2 micrometers or less. The average particle size of the first filler precursor material can be any value between any of the above values (including both end values) and it will be understood that the average particle size of the first filler precursor material can be within the range between any of the above values (including both end values). and it will be further understood that the average particle size of the first filler precursor material can be within the range between any of the above values (including both end values). and it will be understood that the average particle size of the first filler precursor material can be within the range between any of the above values (including both end values). According to yet other embodiments, the first filler precursor material can be described as having a specific particle size distribution span ( PSDS), and the PSD S of the first filler precursor material is equal to (D - D

[0138] ) / D wherein D is equal to the D 90 particle size distribution measurement value of the first filler precursor material, and D 10 is equal to the D 50 particle size 90 of the first filler precursor material, and D is equal to the D 90 particle size distribution measurement value of the first filler precursor material, and D 10 is equal to the D 10 particle size Equal to the distribution measurement value, D 50 is the D of the first filler precursor material 50 equal to the particle size distribution measurement value For example, the PSDS of the first filler precursor material is about 4.5 or less, or about 4.0 or less, or about 3.5 or less, or about 3.0 or less, or even about 2.5 or less, etc., and may be about 5 or less It may be any value between any of the above values (including the extreme values). It will be understood that the PSDS of the first filler precursor material may be within the range between any of the above values (including the extreme values). It will be further understood that the PSDS of the first filler precursor material may be within the range between any of the above values (including the extreme values).

[0139] According to still other embodiments, the first filler precursor material may be described as having a specific average surface area measured using Brunauer-Emmett-Teller (BET) surface area analysis (nitrogen adsorption). For example, the first filler precursor material is about 9.9 m / g or less, or about 9.5 m / g or less, or about 9.0 m 2 / g or less, or about 8 2 / g or less, or about 8 2 .5 m / g or less, or about 8.0 m 2 / g or less, or about 7.5 m 2 / g or less, or about 7 2 .0 m / g or less, or about 6.5 m 2 / g or less, or about 6.0 m 2 / g or less, or about 5.5 2 m / g or less, or about 5.0 m 2 / g or less, or about 4.5 m 2 / g or less, or about 4.0 m 2 / g or less, or about 3.5 m 2 / g or less, or even about 3.5 m 2 / g or less, etc., and an average surface area of about 10 m 2 / g or less ​​​may have. Further, according to other embodiments, the first filler precursor material is at least about 2.4 m 2 / g, etc., and may have an average surface area of at least about 1.2 m 2 / g. The average surface area of the first filler precursor material is between any of the above minimum and maximum values including both ends. It should be understood that the average surface area of the first filler precursor material can be any value within the range (including both ends) between any of the above minimum and maximum values. The average surface area of the first filler precursor material is between any of the above minimum and maximum values (including both ends) and may be further understood to be within the range.

[0140] According to other embodiments, the first filler precursor material may include a specific material. According to a specific embodiment, the first filler precursor material may include a silica-based compound. Further according to other embodiments, the first filler precursor material may consist of a silica-based compound. According to other embodiments, the first filler precursor material may include silica. Further according to other embodiments, the first filler precursor material may consist of silica.

[0141] According to still other embodiments, the first forming mixture can include a first ceramic filler precursor component in a specific content. For example, the content of the first ceramic filler precursor component is at least about 31% by volume, or at least about 32% by volume, or at least about 33% by volume, or at least about 34% by volume, or at least about 35% by volume, or at least about 36% by volume, or at least about 37% by volume, or at least about 38% by volume, or at least about 39% by volume, or at least about 40% by volume with respect to the total volume of the first forming mixture, or at least about 41% by volume, or at least about 42% by volume, or at least about 43% by volume or at least about 44% by volume, or at least about 45% by volume, or at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or at least about 55% by volume, or at least about 56% by volume, or at least about 57% by volume, or at least about 58% by volume, or at least about 59% by volume, or at least about 60% by volume, or at least about 61% by volume, or at least about 62% by volume, or at least about 63% by volume, or at least about 64% by volume, or at least about 65% by volume, or at least about 66% by volume, or at least about 67% by volume, or at least about 68% by volume, or at least about 69% by volume, or at least about 70% by volume, or at least about 71% by volume, or at least about 72% by volume, or at least about 73% by volume, or at least about 74% by volume, or at least about 75% by volume, or at least about 76% by volume, or at least about 77% by volume, or at least about 78% by volume, or at least about 79% by volume, or at least about 80% by volume, or at least about 81% by volume, or at least about 82% by volume, or at least about 83% by volume, or at least about 84% by volume, or at least about 85% by volume, or at least about 86% by volume, or at least about 87% by volume, or at least about 88% by volume, or at least about 89% by volume, or at least about 90% by volume, or at least about 91% by volume, or at least about 92% by volume, or at least about 93% by volume, or at least about 94% by volume, or at least about 95% by volume, or at least about 96% by volume, or at least about 97% by volume, or at least about 98% by volume, or at least about 99% by volume, or at least about 100% by volume. ​The volume percentage is at least about 44 volume %, or at least about 45 volume %, or at least about 4 6 volume %, or at least about 47 volume %, or at least about 48 volume %, or at least about 49 volume %, or at least about 50 volume %, or at least about 51 volume %, or at least about 52 volume %, or at least about 53 volume %, or even at least about 54 volume % any of which may be at least about 30 volume %. According to yet other embodiments, the first ceramic filler precursor component content may be about 56 volume % or less, or even about 55 volume % or less, such as about 57 volume % or less, based on the total volume of the first forming mixture. The first content of the ceramic filler precursor component can be any value (including both end values) between the above - mentioned minimum and maximum values. It will be understood that the first ceramic filler precursor component content can be within the range (including both end values) between any of the above - mentioned minimum and maximum values. It will be further understood that the content of the first ceramic filler precursor component can be within the range (including both end values) between any of the above - mentioned minimum and maximum values.

[0142] According to yet other embodiments, the first ceramic filler precursor component can include a first filler precursor material having a specific content. For example, the content of the first filler precursor material is at least about 81 volume %, or at least about 82 volume %, or at least about 83 volume %, or at least about 8 4 volume %, or at least about 85 volume %, or at least about 86 volume %, or at least about 8 7 volume %, or at least about 88 volume %, or at least about 89 volume %, or even at least about 9 0 volume %, such as at least about 80 volume %, based on the total volume of the first ceramic filler precursor component. According to yet other embodiments, the content of the first filler precursor material is the first ceramic filler precursor component's total volume of at least about 80 volume %, or at least about 81 volume %, or at least about 82 volume %, or at least about 83 volume %, or at least about 84 volume %, or at least about 85 volume %, or at least about 86 volume %, or at least about 87 volume %, or at least about 88 volume %, or at least about 89 volume %, or even at least about 90 volume %. According to yet other embodiments, the content of the first filler precursor material is the first ceramic filler precursor component's​ With respect to the total volume of the components, it may be about 100% by volume or less, such as about 99% by volume or less, or about 98% by volume or less, or about 97% by volume or less, or about 96% by volume or less, or about 95% by volume or less, or about 94% by volume or less, or about 93% by volume or less, or even about 92% by volume or less. It should be understood that the content of the first filler precursor material can be any value (including both end values) between any of the above minimum and maximum values. The content of the first filler precursor material can be within the range (including both end values) between any of the above minimum and maximum values. It should be further understood. According to still other embodiments, the first ceramic filler precursor component may include a second filler precursor material. (Including both end values) According to still other embodiments, the second filler precursor material may include a specific material. For example, the second filler precursor material can include a high dielectric constant ceramic material such as a ceramic material having a dielectric constant of at least about 14. According to a specific embodiment, the second filler precursor material can include any high dielectric constant ceramic material such as TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof. It should be further understood.

[0143] According to still other embodiments, the first ceramic filler precursor component may include a second filler precursor material. It may contain a second filler precursor material.

[0144] According to still other embodiments, the second filler precursor material may contain a specific material. For example, the second filler precursor material can include a high dielectric constant ceramic material such as a ceramic material having a dielectric constant of at least about 14. According to a specific embodiment, the second filler precursor material can include any high dielectric constant ceramic material such as TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof. TiO3, BaTiO4, or any combination thereof. Any high dielectric constant ceramic material such as TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof can be included. It can be included.

[0145] According to still other embodiments, the second filler precursor material may include TiO2. According to still other embodiments, the second filler precursor material may consist of TiO2. It may consist of TiO2. It should be understood.

[0146] According to still other embodiments, the first ceramic filler precursor component has a specific content. It may contain a second filler precursor material. For example, the content of the second filler precursor material is at least about 2% by volume, or at least about 3% by volume, or at least about 4% by volume, or at least about 5% by volume, or at least about 6% by volume, or at least about 7% by volume, or at least about 8% by volume, or at least about 9% by volume, or at least about 10% by volume, etc., and may be at least about 1% by volume. According to still other embodiments, the content of the second filler precursor material is about 19% by volume or less, or about 18% by volume or less, or about 17% by volume or less, or about 16% by volume or less, or about 15% by volume or less, or about 1 4% by volume or less, or about 13% by volume or less, or about 12% by volume or less, etc., and may be about 20% by volume or less. It will be understood that the content of the second filler precursor material can be any value between the above minimum and maximum values (including both ends). The content of the second filler precursor material can be further understood to be within the range between any of the above minimum and maximum values (including both ends). It will be understood that the content of the second filler precursor material can be any value between any of the above minimum and maximum values (including both ends). The content of the second filler precursor material can be further understood to be within the range between any of the above minimum and maximum values (including both ends).

[0147] According to still other embodiments, the first ceramic filler precursor component can include an amorphous material having a specific content. For example, the first ceramic filler precursor component can include at least about 97% of an amorphous material, or at least about 98%, or even at least about 99%. It will be understood that the content of the amorphous material can be any value between any of the above values (including both ends). It will be further understood that the content of the amorphous material can be within the range between any of the above values (including both ends). ​​​​

[0148] According to another embodiment, the first resin matrix precursor component may include a specific material. For example, the first resin matrix precursor component may include a perfluoropolymer. According to still another embodiment, the first resin matrix precursor component may consist of a perfluoropolymer.

[0149] According to still another embodiment, the perfluoropolymer of the first resin precursor matrix component may include a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof. According to another embodiment, the perfluoropolymer of the first resin matrix precursor component may consist of a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0150] According to still another embodiment, the perfluoropolymer of the first resin matrix precursor component may include polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to still another embodiment, the perfluoropolymer of the first resin matrix precursor component may consist of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0151] According to yet other embodiments, the first forming mixture may include a specific content of a first resin matrix precursor component. For example, the content of the first resin matrix precursor component is at least about 46% by volume, or at least about 4 7% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or even at least about 55% by volume of the total volume of the first forming mixture, and may be at least about 45% by volume. According to yet other embodiments, the content of the first resin matrix precursor component is below about 63% by volume, or below about 62% by volume, or below about 61% by volume, or below about 60% by volume, or below about 59 % by volume, or below about 58% by volume, or even below about 57% by volume of the total volume of the first forming mixture. It will be understood that the content of the first resin matrix precursor component can be any value between the above minimum and maximum values (including both end values). It will be further understood that the content of the first resin matrix precursor component can be within the range between any of the above minimum and maximum values (including both end values).

[0152] According to yet other embodiments, the first forming mixture may include a specific content of a perfluoropoly mer. For example, the content of the perfluoropolymer is at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least ​​​​At least about 45 volume percent, such as at least about 51 volume percent, or at least about 52 volume percent, or at least about 53 volume percent, or at least about 54 volume percent, or even at least about 55 volume percent, etc. According to yet other embodiments, the perfluoropolymer content is about 62 volume percent or less, or about 61 volume percent or less, or about 6 0 volume percent or less, or about 59 volume percent or less, or about 58 volume percent or less, or even about 57 volume percent or less, etc., of the total volume of the first forming mixture. It will be understood that the perfluoropolymer content can be any value (including both end values) between any of the above minimum and maximum values. It will be further understood that the perfluoropolymer content can be within the range (including both end values) between any of the above minimum and maximum values.

[0153] According to yet other embodiments, forming the dielectric substrate can further include combining a second resin matrix precursor component and a second ceramic filler precursor component to form a second forming mixture, and forming the second forming mixture into a second filled polymer layer that covers under the polyimide layer.

[0154] According to certain embodiments, the second ceramic filler precursor component can include a third filler precursor material that can have certain properties that can improve the performance of the copper-clad laminate formed by forming method 300.

[0155] According to certain embodiments, the third filler precursor material can have a specific size distribution. For the purposes of the embodiments described herein, the particle size distribution of the material, for example, The particle size distribution of the third filler precursor material is the particle size distribution D value D 10 , D 50 and D 90 any of the combinations can be used to describe. The D 10 value from the particle size distribution is defined as the particle size value at which 10% of the particles are smaller than that value and 90% of the particles are larger than that value. The D value from the particle size distribution 50 is defined as the particle size value at which 50% of the particles are smaller than that value and 50% of the particles are larger than that value. The D 90 value from the particle size distribution is defined as the particle size value at which 90% of the particles are smaller than that value and 10% of the particles are larger than that value. For the purposes of the embodiments described herein , the particle size measurement of a particular material is performed using laser diffraction spectroscopy .

[0156] According to a particular embodiment, the third filler precursor material may have a specific size distribution D 10 value . For example, the D 10 value of the third filler precursor material is at least about 0.3 micrometers, or at least about 0.4 micrometers, or at least about 0.5 micrometers, or at least about 0.6 micrometers, or at least about 0.7 micrometers, or at least about 0.8 micrometers, or at least about 0.9 micrometers, or at least about 1.0 micrometers, or at least about 1.1 micrometers, or even at least about 1.2 micrometers, etc., and may be at least about 0.2 micrometers. According to still other embodiments, the D of the third filler 10 material is about 1.5 micrometers or less, or even about 1.4 micrometers It may be, for example, 1.6 micrometers or less. The third filler precursor material D of 10 can be any value (including both end values) between any of the above minimum and maximum values It will be understood that D of the third filler precursor material 10 is further understood to be within the range (including both end values) between any of the above minimum and maximum values

[0157] According to other embodiments, the third filler precursor material may have a specific size distribution D 50 value For example, D of the third filler precursor material 50 is at least about 0.6 micro meters, or at least about 0.7 micrometers, or at least about 0.8 micro meters, or at least about 0.9 micrometers, or at least about 1.0 micro meters, or at least about 1.1 micrometers, or at least about 1.2 micro meters, or at least about 1.3 micrometers, or at least about 1.4 micro meters, or at least about 1.5 micrometers, or at least about 1.6 micro meters, or at least about 1.7 micrometers, or at least about 1.8 micro meters, or at least about 1.9 micrometers, or at least about 2.0 micro meters, or at least about 2.1 micrometers, or even at least about 2. 2 micrometers, etc., may be at least about 0.5 micrometers. Further According to other embodiments, D of the third filler material 50 is about 2.6 micrometers or less or about 2.5 micrometers or less, or even about 2.4 micrometers or less, etc. , may be 2.7 micrometers or less. D of the third filler material 50 is any value (including both end values) between either the minimum value and the maximum value described above, and it can be understood. D of the third filler precursor material 50 is further understood to be within the range between either of the above minimum and maximum values (including both end values).

[0158] According to other embodiments, the third filler precursor material may have a specific size distribution D 90 value . For example, D of the third filler precursor material 90 is at least about 0.9 micro meter, or at least about 1.0 micrometer, or at least about 1.1 micro meter, or at least about 1.2 micrometer, or at least about 1.3 micro meter, or at least about 1.4 micrometer, or at least about 1.5 micro meter, or at least about 1.6 micrometer, or at least about 1.7 micro meter, or at least about 1.8 micrometer, or at least about 1.9 micro meter, or at least about 2.0 micrometer, or at least about 2.1 micro meter, or at least about 2.2 micrometer, or at least about 2.3 micro meter, or at least about 2.4 micrometer, or at least about 2.5 micro meter, or at least about 2.6 micrometer, or even at least about 2. 7 micrometers, etc., may be at least about 0.8 micrometer. Further According to other embodiments, D of the third filler material 90 is 7.5 micrometers or less , or about 7.0 micrometers or less, or about 6.5 micrometers or less, or about 6. 0 micrometers or less, or about 5.5 micrometers or less, or about 5.4 microm eters or less, or about 5.3 micrometers or less, or about 5.2 micrometers or less, or even about 5.1 micrometers or less, etc., may be about 8.0 micrometers or less and be acceptable. The D of the third filler precursor material 90 can be understood to be any value (including both end values) between any of the above minimum and maximum values. The D of the third filler precursor material can be further understood to be within the range (including both end values) between any of the above minimum and maximum values. The D of the third filler precursor material 90 can be further understood to be within the range (including both end values) between any of the above minimum and maximum values.

[0159] According to yet other embodiments, the third filler precursor material may have a specific average particle size measured using laser diffraction spectroscopy. For example, the average particle size of the third filler precursor material may be about 9 micrometers or less, or about 8 micrometers or less, or about 7 mic rometers or less, or about 6 micrometers or less, or about 5 micrometers or less, or may be about 4 micrometers or less, or about 3 micrometers or less, or even about 2 mic rometers or less, etc., may be about 10 micrometers or less. The average particle size of the third filler precursor material can be understood to be any value (including both end values) between any of the above values. The average particle size of the third filler precursor material can be further understood to be within the range (including both end values) between any of the above values.

[0160] According to yet other embodiments, the third filler precursor material has a specific particle size distribution span ( The PSD of the third filler precursor material can be described as having a PSD of 100%. S is (D 90 -D 10 ) / D 50 where D 90 is a third filler precursor material Fee D 90 D is equal to the particle size distribution measurement 10 is the D of the third filler precursor material 10 particle size The distribution measure is equal to D 50 is the D of the third filler precursor material 50 Particle size distribution measurement For example, the PSDS of the third filler precursor material is about 4.5 or less, or about 4.0 or less. or less than about 5, such as less than about 3.5, or less than about 3.0, or even less than about 2.5. The PSDS of the third filler precursor material may be between any of the above values ​​(both It will be understood that the PS of the third filler precursor material may be any value, including any extreme value. It is further understood that DS may be within a range between any of the above values ​​(inclusive). Let it be understood.

[0161] According to yet another embodiment, the third filler precursor material is a filler precursor material as described in Brunauer-Em Specific surface area measured using BET surface area analysis (nitrogen adsorption) For example, the third filler precursor material may be described as having an average surface area of ​​about 9.9m 2 / g or less, or about 9.5m 2 / g or less, or about 9.0m 2 / g or less, or about 8 .5m 2 / g or less, or about 8.0m 2 / g or less, or about 7.5m 2 / g or less, or about 7. 0m 2 / g or less, or about 6.5m 2less than or equal to about 6.0 m / g, or 2 less than or equal to about 5.5 m 2 less than or equal to about 5.0 m / g, or 2 less than or equal to about 4.5 m / g, or 2 less than or equal to about 4.0 m / g, or 2 less than or equal to, or even about 3.5 m / g 2 less than or equal to about 10 m / g, such as 2 the average surface area less than or equal to may be included. According to still other embodiments, the third filler precursor material is at least about 2.4 m 2 / g, such as at least about 1.2 m 2 / g may have an average surface area. The average surface area of the third filler precursor material may be any value (including both ends) between any of the above minimum and maximum values. It will be understood that the average surface area of the third filler precursor material may be within the range (including both ends) between any of the above minimum and maximum values. It will be further understood that the average surface area of the third filler precursor material may be within the range (including both ends) between any of the above minimum and maximum values.

[0162] According to other embodiments, the third filler precursor material may include a specific material. According to a specific embodiment, the third filler precursor material may include a silica-based compound. Further according to other embodiments, the third filler precursor material may consist of a silica-based compound. According to other embodiments, the third filler precursor material may include silica. Further according to other embodiments, the third filler precursor material may consist of silica.

[0163] According to still other embodiments, the second forming mixture may include a second ceramic filler precursor component having a specific content. For example, the second ceramic filler precursor component ​​The content is at least about 31% by volume, or at least about 32% by volume, or at least about 33% by volume, or at least about 34% by volume, or at least about 35% by volume, or at least about 36% by volume, or at least about 37% by volume, or at least about 38% by volume, or at least about 39% by volume, or at least about 40% by volume , or at least about 41% by volume, or at least about 42% by volume, or at least about 43% by volume , or at least about 44% by volume, or at least about 45% by volume, or at least about 4 6% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or even at least about 54% by volume, any of which may be at least about 30% by volume. According to still other embodiments, the second content of the ceramic filler precursor component may be about 57% by volume or less, such as about 56% by volume or less, or even about 55% by volume or less, based on the total volume of the second forming mixture. The content of the second ceramic filler precursor component may be any value (including both end values) between the above minimum and maximum values. It will be understood that the content of the second ceramic filler precursor component can be within a range (including both end values) between any of the above minimum and maximum values. According to still other embodiments, the second ceramic filler precursor component can include a third filler precursor material having a specific content. For example, the content of the third filler precursor material is at least about 81% by volume based on the total volume of the second ceramic filler precursor component.

[0164] According to still other embodiments, the second ceramic filler precursor component can include a third filler precursor material having a specific content. For example, the content of the third filler precursor material is at least about 81% by volume based on the total volume of the second ceramic filler precursor component. volume %, or at least about 82 volume %, or at least about 83 volume %, or at least about 8 4 volume %, or at least about 85 volume %, or at least about 86 volume %, or at least about 87 volume %, or at least about 88 volume %, or at least about 89 volume %, or even at least about 90 volume %, etc., may be at least about 80 volume %. According to still other embodiments in form, the content of the third filler precursor material is about 99 volume % or less, or about 98 volume % or less, or about 97 volume % or less, or about 96 volume % or less, or about 95 volume % or less, or about 94 volume % or less, or about 93 volume % or less, or even about 92 volume % or less, etc., with respect to the total volume of the second ceramic filler precursor component, and may be about 100 volume % or less. It will be understood that the content of the third filler precursor material can be any value (including both end values) between the above minimum and maximum values. It will be further understood that the content of the third filler precursor material can be within the range (including both end values) between any of the above minimum and maximum values. It will be understood that the content of the third filler precursor material can be any value (including both end values) between the above minimum and maximum values. It will be further understood that the content of the third filler precursor material can be within the range (including both end values) between any of the above minimum and maximum values. It will be understood that the content of the third filler precursor material can be any value (including both end values) between the above minimum and maximum values. It will be further understood that the content of the third filler precursor material can be within the range (including both end values) between any of the above minimum and maximum values. According to still other embodiments, the second ceramic filler precursor component may include a fourth filler precursor material. According to still other embodiments, the fourth filler precursor material may include a specific material. For example, the fourth filler precursor material can include a high dielectric constant ceramic material such as a ceramic material having a dielectric constant of at least about 14. According to a specific embodiment, the fourth

[0165] filler precursor material can include TiO2, SrTiO3, ZrTi2O6, MgTiO3, Ca etc.

[0166] According to still other embodiments, the fourth filler precursor material may include a specific material. For example, the fourth filler precursor material can include a high dielectric constant ceramic material such as a ceramic material having a dielectric constant of at least about 14. According to a specific embodiment, the fourth filler precursor material can include a high dielectric constant ceramic material such as a ceramic material having a dielectric constant of at least about 14. According to a specific embodiment, the fourth filler precursor material can include TiO2, SrTiO3, ZrTi2O6, MgTiO3, Ca Any high dielectric constant ceramic such as TiO3, BaTiO4, or any combination thereof can be included.

[0167] According to yet another embodiment, the fourth filler precursor material may include TiO2. According to yet another embodiment, the fourth filler precursor material may consist of TiO2.

[0168] According to yet another embodiment, the second ceramic filler precursor component can include a fourth filler precursor material in a specific content. For example, the content of the fourth filler precursor material can be at least about 1 volume %, or at least about 2 volume %, or at least about 3 volume %, or at least about 4 volume %, or at least about 5 volume % %, or at least about 6 volume %, or at least about 7 volume %, or at least about 8 volume %, %, or at least about 9 volume %, or at least about 10 volume %, etc., based on the total volume of the second ceramic filler precursor component. According to yet another embodiment, the content of the fourth filler precursor material can be about 20 volume % or less, or about 19 volume % or less, or about 18 volume % or less, or about 17 volume % or less, or about 16 volume % or less, or about 15 volume % or less, or about 14 volume % or less, or about 13 volume % or less, or about 12 volume % or less, etc. It will be understood that the content of the fourth filler precursor material can be any value between the above minimum and maximum values (including both end values). It will be further understood that the content of the fourth filler precursor material can be within a range between any of the above minimum and maximum values (including both end values).

[0169] According to still other embodiments, the second ceramic filler precursor component can include an amorphous material having a specific content. For example, the second ceramic filler precursor component can include at least about 97% of amorphous material, such as at least about 98%, or even at least about 99%. It will be understood that the content of the amorphous material can be any value between any of the above values (including the end values). It will be further understood that the content of the amorphous material can be within a range between any of the above values (including the end values).

[0170] According to other embodiments, the second resin matrix precursor component can include a specific material. For example, the second resin matrix precursor component can include a perfluoropolymer. According to still other embodiments, the second resin matrix precursor component can consist of a perfluoropolymer.

[0171] According to still other embodiments, the perfluoropolymer of the first resin precursor matrix component can include a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene ( HFP), a terpolymer of a polymer of tetrafluoroethylene (TFE), or any combination thereof. According to other embodiments, the perfluoropolymer of the second resin matrix precursor component can consist of a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene ( TFE), or any combination thereof.

[0172] According to still other embodiments, the perfluoropolymer of the second resin matrix precursor component The mark may include polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to still other embodiments, the perfluoro polymer of the second resin matrix precursor component may be polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to still other embodiments, the second forming mixture may include a specific content of the second resin matrix

[0173] precursor component. For example, the content of the second resin matrix precursor component may be at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or even at least about 55% by volume such as at least about 45% by volume. According to still other embodiments, the content of the second resin matrix precursor component may be about 63% by volume or less, or about 62% by volume or less, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or even about 57% by volume or less of the total volume of the second forming mixture. It will be understood that the content of the second resin matrix precursor component may be any value between any of the above minimum and maximum values (including both ends). The content of the second resin matrix precursor component may be within the range (including both ends) between any of the above minimum and maximum values. It should be understood that the content of the second resin matrix precursor component can be any value between any of the above minimum and maximum values (including both ends). The content of the second resin matrix precursor component is within the range (including both ends) between any of the above minimum and maximum values. It will be further understood that it can be within the enclosure.

[0174] According to yet another embodiment, the second forming mixture may include a specific content of perfluoropoly mer. For example, the content of the perfluoropolymer may be at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or even at least about 55% by volume, etc., of at least about 45% by volume. According to yet another embodiment, the content of the perfluoropolymer may be about 62% by volume or less, or about 61% by volume or less, or about 6 0% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or even about 57% by volume or less, etc., of about 63% by volume or less. It will be understood that the content of the perfluoropolymer can be any value (including both end values) between any of the above minimum and maximum values. It will be further understood that the content of the perfluoropolymer can be within the range (including both end values) between any of the above minimum and maximum values. 2 of the total volume of the forming mixture. 0% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or even about 57% by volume or less, etc., of about 63% by volume or less. It will be understood that the content of the perfluoropolymer can be any value (including both end values) between any of the above minimum and maximum values. It will be further understood that the content of the perfluoropolymer can be within the range (including both end values) between any of the above minimum and maximum values. It will be understood that the content of the perfluoropolymer can be any value (including both end values) between any of the above minimum and maximum values. It will be further understood that the content of the perfluoropolymer can be within the range (including both end values) between any of the above minimum and maximum values. It will be further understood that the content of the perfluoropolymer can be within the range (including both end values) between any of the above minimum and maximum values.

[0175] Next, referring to an embodiment of a copper-clad laminate formed according to the forming method 300, FIG. 4 a includes a schematic view of a copper-clad laminate 400. As shown in FIG. 4a, the copper-clad laminate 400 can include a copper foil layer 403 and a dielectric substrate 405 covering the surface of the copper foil layer 403. As further shown in FIG. 4a, the dielectric substrate 405 can include a polyimide layer 402 and a polyimide layer 4 It can include a first filled polymer layer 404 that covers the top of 02. As shown in FIG. 4a, the first filled polymer layer 404 can include a first resin matrix component 410 and a first ce ramic filler component 420.

[0176] According to a particular embodiment, the first ceramic filler component 420 can include a first filler material that can have particular properties that can improve the performance of the dielectric substrate 40 5. It can be done.

[0177] According to a particular embodiment, the first filler material of the first ceramic filler component 420 can have a particular size distribution. For the purposes of the embodiments described herein, the particle size distribution of the material, e.g., the particle size distribution of the first filler material, can be described using any combination of particle size distribution D values D D D 10 D 50 and D 90 The D values from the particle size distribution can be described using any combination of D values. The D values from the particle size distribution are defined as the particle size value such that 10% of the particles are smaller than that value and 90% of the particles are larger than that value. The D value from the particle size distribution is defined as the particle size value such that 50% of the particles are smaller than that value and 50% of the particles are larger than that value. The D90 value from the particle size distribution is defined as the particle size value such that 90% of the particles are smaller than that value and 10% of the particles are larger than that value. For the purposes of the embodiments described herein, the particle size measurement of a particular material is performed using laser diffraction spectroscopy. from the particle size distribution 10 D values are defined as the particle size value such that 10% of the particles are smaller than that value and 90% of the particles are larger than that value. The D value from the particle size distribution 50 is defined as the particle size value such that 50% of the particles are smaller than that value and 50% of the particles are larger than that value. The D90 value from the particle size distribution is defined as the particle size value such that 90% of the particles are smaller than that value and 10% of the particles are larger than that value. For the purposes of the embodiments described herein, the particle size measurement of a particular material is performed using laser diffraction spectroscopy. is performed using laser diffraction spectroscopy.

[0178] According to a particular embodiment, the first filler material of the first ceramic filler component 420 has a particular size distribution D D 10For example, the first filler material may have a value of D 10 is at least about 0.3 micrometers, or at least about 0.4 micrometers or at least about 0.5 micrometers, or at least about 0.6 micrometers or at least about 0.7 micrometers, or at least about 0.8 micrometers or at least about 0.9 micrometers, or at least about 1.0 micrometers or at least about 1.1 micrometers, or even at least about 1.2 micrometers. In yet another embodiment, the distance between the first and second electrodes may be at least about 0.2 micrometers, such as at least about 0.2 micrometers. According to the embodiment, the D of the first filler material 10 is about 1.5 micrometers or less, or For example, the thickness may be about 1.6 micrometers or less, such as about 1.4 micrometers or less. D of the first filler material 10 is between any of the above minimum and maximum values ​​( It will be understood that the D of the first filler material can be any value, including both extreme values. 10 teeth may be within a range between any of the above minimum and maximum values ​​(including both ends). This will be further understood.

[0179] According to another embodiment, the first filler material of the first ceramic filler component 420 is the specific size distribution D 50 For example, the D of the first filler material may have a value of 50 teeth , at least about 0.9 micrometers, or at least about 1.0 micrometers, or at least about 1.1 micrometers, or at least about 1.2 micrometers, or at least about 1.3 micrometers, or at least about 1.4 micrometers, or is at least about 1.5 micrometers, or at least about 1.6 micrometers, or is at least about 1.7 micrometers, or at least about 1.8 micrometers, or is at least about 1.9 micrometers, or at least about 2.0 micrometers, or is at least about 2.1 micrometers, or even at least about 2.2 micrometers and so on, and may be at least about 0.8 micrometers. According to still other embodiments the D of the first filler material 50 is about 2.6 micrometers or less, or about 2.5 micrometers or less or even about 2.4 micrometers or less and so on, and may be about 2.7 micrometers or less. The D of the first filler material 50 can be understood to be any value (including both end values) between any of the above minimum and maximum values It will be understood that the D of the first filler material can be any value (including both end values) within the range between any of the above minimum and maximum values 50 and it will be further understood that the D of the first filler material can be within the range (including both end values) between any of the above minimum and maximum values According to other embodiments, the first filler material of the first ceramic filler component 420

[0180] may have a specific size distribution D value. For example, the D of the first filler material 90 is 90 is at least about 0.9 micrometers, or at least about 1.0 micrometers, or is at least about 1.1 micrometers, or at least about 1.2 micrometers, or is at least about 1.3 micrometers, or at least about 1.4 micrometers, or is at least about 1.5 micrometers, or at least about 1.6 micrometers, or is at least about 1.7 micrometers, or at least about 1.8 micrometers, or is at least about 1.9 micrometers, or at least about 2.0 micrometers, or is at least about 2.1 micrometers, or at least about 2.2 micrometers, or is at least about 2.3 micrometers, or at least about 2.4 micrometers, or is at least about 2.5 micrometers, or at least about 2.6 micrometers, or is further at least about 0.8 micrometers, such as at least about 2.7 micrometers or more. According to still other embodiments, the D of the first filler material 90 is about 7 .5 micrometers or less, or about 7.0 micrometers or less, or about 6.5 micrometers or less, or about 6.0 micrometers or less, or about 5.5 micrometers or less , or about 5.4 micrometers or less, or about 5.3 micrometers or less, or about 5. 2 micrometers or less, or further about 5.1 micrometers or less, etc., about 8.0 m icrometers or less may be. The D of the first filler material 90 is understood to be any value (including both end values) between the above minimum value and the maximum value. It will be understood that the D of the first filler material 90 is within the range (including both end values) between any of the above minimum and maximum values.

[0181] According to still other embodiments, the first filler material of the first ceramic filler component 420 may have a specific average particle size measured by laser diffraction spectroscopy. For example , the average particle size of the first filler material is about 9 micrometers or less, or about 8 micrometers Less than 10 µm, or less than about 7 µm, or less than about 6 µm, or less than about 5 µm, or less than about 4 µm, or less than about 3 µm, or even less than about 2 µm, etc., may be less than 10 µm. It will be understood that the average particle size of the first filler material can be any value between any of the above values (including both end values). It will be further understood that the average particle size of the first filler material can be within the range between any of the above values (including both end values). According to yet another embodiment, the first filler material of the first ceramic filler component 420 can be described as having a specific particle size distribution span (PSDS), where PSDS is equal to (D - D ) / D

[0182] where D is equal to the D particle size distribution measurement value of the first filler material, D 90 is equal to the D 10 particle size distribution measurement value of the first filler material, and D 50 is equal to the D 90 particle size distribution measurement value of the first filler material. For example, the PSDS of the first filler material is about 4.5 or less, or about 4.0 or less, or about 3.5 or less, 90 or about 3.0 or less, or even about 2.5 or less, etc., may be about 5 or less. It will be understood that the PSDS of the first filler material can be any value between any of the above values (including both end values). It will be further understood that the PSDS of the first filler material can be within the range between any of the above values (including both end values). 10 10 50 50

[0183] ​​​​​​​​​​According to yet another embodiment, the first filler of the first ceramic filler component 420 The materials were analyzed by Brunauer-Emmett-Teller (BET) surface area analysis (nitrogen adsorption The surface area of ​​the polymer may be described as having a particular average surface area, as measured using a surface treatment method, such as: The first filler material is approximately 9.9 m 2 / g or less, or about 9.5m 2 / g or less, or about 9. 0m 2 / g or less, or about 8.5m 2 / g or less, or about 8.0m 2 / g or less, or about 7.5 m 2 / g or less, or about 7.0m 2 / g or less, or about 6.5m 2 / g or less, or about 6.0m 2 / g or less, or about 5.5m 2 / g or less, or about 5.0m 2 / g or less, or about 4.5m 2 / g or less, or about 4.0m 2 / g or less, or even about 3.5m 2 / g or less, about 10 m 2 According to yet another embodiment, the first filler may have an average surface area of ​​0.1 to 1.0 μm / g or less. The material must be at least 2.4m 2 At least about 1.2 m / g, 2 / g average surface area The average surface area of ​​the first filler material may be within the range of the minimum and maximum values ​​set forth above. It will be appreciated that the value may be any value between (and including) any of the above. - The average surface area of ​​the material is between the minimum and maximum values ​​above (inclusive). It will be further understood that the range may be within the range.

[0184] According to another embodiment, the first filler material of the first ceramic filler component 420 can include a specific material. According to certain embodiments, the first filler material can include a silica-based compound. According to still other embodiments, the first filler material may consist of a silica-based compound. According to other embodiments, the first filler material may include silica. According to still other embodiments, the first filler material may consist of silica.

[0185] According to still other embodiments, the first filled polymer layer 404 can include a specific content of a first ceramic filler component 420. For example, the content of the first ceramic filler component 420 can be at least about 5 volume %, or at least about 52 volume %, or at least about 53 volume %, or even at least about 54 volume %, etc., and can be at least about 50 volume %. According to still other embodiments the content of the ceramic filler component 220 can be about 56 volume % or less, or even about 55 volume % or less, etc., and can be about 57 volume % or less with respect to the total volume of the first filled polymer layer 404. It will be understood that the content of the first ceramic filler component 420 can be any value (including both end values) between the above minimum and maximum values. It will be further understood that the content of the first ceramic filler component 420 can be within a range (including both end values) between any of the above minimum and maximum values.

[0186] According to still other embodiments, the first ceramic filler component 420 can include a specific content of the first filler material. For example, the content of the first filler material can be the first At least about 81% by volume, or at least at least about 82% by volume, or at least about 83% by volume, or at least about 84% by volume, or at least about 85% by volume, or at least about 86% by volume, or at least about 87% by volume , or at least about 88% by volume, or at least about 89% by volume, or even at least about 90% by volume, etc., may be at least about 80% by volume. According to still other embodiments , the content of the first filler material is relative to the total volume of the first ceramic filler component 420 and may be about 99% by volume or less, or about 98% by volume or less, or about 97% by volume or less, or about 96% by volume % or less, or about 95% by volume or less, or about 94% by volume or less, or about 93% by volume or less, or even about 92% by volume or less, etc., may be about 100% by volume or less. The content of the first filler material can be any value (including both end values) between any of the above minimum and maximum values . It will be understood that the content of the first filler material can be within the range (including both end values) between any of the above minimum and maximum values.

[0187] According to still other embodiments, the first ceramic filler component 420 can include a second filler material.

[0188] According to still other embodiments, the second filler material of the first ceramic filler component 420 can include specific materials. For example, the second filler material can include a high dielectric constant ceramic material such as a ceramic material having a dielectric constant of at least about 14. According to a specific embodiment, the second filler material of the first ceramic filler component 420 . ​It can include any high dielectric constant ceramic material such as TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTi O4, or any combination thereof. It is possible.

[0189] According to yet other embodiments, the second filler material of the first ceramic filler component 420 can include TiO2. According to yet other embodiments, the second filler material may consist of TiO2.

[0190] According to yet other embodiments, the first ceramic filler component 420 can include a second filler material in a specific content. For example, the content of the second filler material is at least about 2 volume %, or at least about 3 volume %, or at least about 4 volume %, or at least about 5 volume %, or at least about 6 volume %, or at least about 7 volume %, or at least about 8 volume %, or at least about 9 volume %, or at least about 10 volume %, etc., and may be at least about 1 volume %. According to yet other embodiments, the content of the second filler material is about 19 volume % or less, or about 18 volume % or less, or about 1 7 volume % or less, or about 16 volume % or less, or about 15 volume % or less, or about 14 volume % or less, or about 13 volume % or less, or about 12 volume % or less, etc., and may be about 20 volume % or less. It will be understood that the content of the second filler material can be any value between any of the above minimum and maximum values (including both end values). The content of the second filler material can be within the range between any of the above minimum and maximum values (including both end values). It can be within the range between any of the above minimum and maximum values (including both end values). It should be understood that the content of the second filler material can be any value between any of the above minimum and maximum values (including both end values). The content of the second filler material can be within the range between any of the above minimum and maximum values (including both end values). It should be understood that the content of the second filler material can be any value between any of the above minimum and maximum values (including both end values). The content of the second filler material can be within the range between any of the above minimum and maximum values (including both end values). It should be understood that the content of the second filler material can be any value between any of the above minimum and maximum values (including both end values). The content of the second filler material can be within the range between any of the above minimum and maximum values (including both end values). will be further understood.

[0191] According to yet other embodiments, the first ceramic filler component 420 can include a specific content of an amorphous material. For example, the first ceramic filler component 420 can include at least about 97% of an amorphous material, such as at least about 98% or even at least about 99%. It will be understood that the content of the amorphous material can be any value between any of the above values (including both end values). It will be further understood that the content of the amorphous material can be within a range between any of the above values (including both end values).

[0192] According to other embodiments, the first resin matrix component 410 can include a specific material. For example, the first resin matrix component 410 can include a perfluoropolymer. According to yet other embodiments, the first resin matrix component 410 can consist of a perfluoropolymer.

[0193] According to yet other embodiments, the perfluoropolymer of the first resin matrix component 410 can include a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene ( HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof. According to other embodiments, the perfluoropolymer of the first resin matrix component 410 can consist of a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE ), or any combination thereof. ) or any combination thereof.

[0194] According to still other embodiments, the perfluoropoly mer of the first resin matrix component 410 is polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to still other embodiments, the perfluoropolymer of the first resin matrix component 410 may consist of polytetrafluoroethylene (PTFE), perfluoroal koxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0195] According to still other embodiments, the first filled polymer layer 404 can include a specific content of the first resin matrix component 410. For example, the content of the first resin matrix component 410 can be at least about 46 volume %, or at least about 47 volume %, or at least about 48 volume %, or at least about 4 9 volume %, or at least about 50 volume %, or at least about 51 volume %, or at least about 52 volume %, or at least about 53 volume %, or at least about 54 volume %, or even at least about 55 volume %, etc., and can be at least about 45 volume %. According to still other embodiments the content of the first resin matrix component 410 can be about 63 volume % or less, or about 62 volume % or less, or about 61 volume % or less with respect to the total volume of the first filled polymer layer 4 04, or about 60 volume % or less, or about 59 volume % or less, or about 58 volume % or less , or even about 57 volume % or less. It is understood that the content of the first resin matrix component 410 can be any value between the above minimum and maximum values (including both end values).​ Well. It will be further understood that the content of the first resin matrix component 410 can be within the range between any of the above minimum and maximum values (including both end values).

[0196] According to still other embodiments, the first filled polymer layer 404 may include a perfluoropolymer with a specific content. For example, the content of the perfluoropolymer may be at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or even at least about 55% by volume, etc., and may be at least about 45% by volume. According to still other embodiments, the content of the perfluoropolymer may be about 62% by volume or less, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or even about 57% by volume or less, etc., and may be about 63% by volume or less with respect to the total volume of the first filled polymer layer 404. It will be understood that the content of the perfluoropolymer can be any value between any of the above minimum and maximum values (including both end values). It will be further understood that the content of the perfluoropolymer can be within the range between any of the above minimum and maximum values (including both end values).

[0197] According to still other embodiments, the dielectric substrate 405 can have a specific porosity measured using X-ray diffraction. For example, the porosity of the substrate 405 is about 9% by volume or less, or is about 8% by volume or less, or about 7% by volume or less, or about 6% by volume or less, or even about 5% by volume or less, etc., and may be about 10% by volume or less. The porosity of the dielectric substrate 405 can be understood to be any value between any of the above values (including both end values). The porosity of the dielectric substrate 405 can be further understood to be within the range between any of the above values (including both end values). According to still other embodiments, the dielectric substrate 405 may have a specific average thickness. For example, the average thickness of the dielectric substrate 405 is at least about 15 micrometers, or at least about 20 micrometers, or at least about 25 micrometers, or at least about 30 micrometers, or at least about 35 micrometers, or at least about 40 micrometers, or at least about 45 micrometers, or at least about 50 micrometers, or at least about 55 micrometers, or at least about 60 micrometers, or at least about 65 micrometers, or at least about 70 micrometers, or even at least about 75 micrometers, etc., and may be at least about 10 micrometers. According to still other embodiments, the average thickness of the dielectric substrate 405 is about 1800 micrometers or less, or about 1600 micrometers or less, or about 1400 micrometers or less, or about 1200 micrometers or less, or about 1000 micrometers or less, or about 800 micrometers or less, or about 600 micrometers or less, or about 400 micrometers or less, or about 200 micrometers or less, or about 190 micrometers or less, or about 180 micrometers or less, or about 170 micrometers It should be understood that the porosity of the dielectric substrate 405 can be any value between any of the above values (including both end values). The porosity of the dielectric substrate 405 can be further understood to be within the range between any of the above values (including both end values). The porosity of the dielectric substrate 405 is within the range between any of the above values (including both end values). It should be further understood that it can be obtained.

[0198] According to still other embodiments, the dielectric substrate 405 may have a specific average thickness. For example, the average thickness of the dielectric substrate 405 is at least about 15 micrometers, or at least about 20 micrometers, or at least about 25 micrometers, or at least about 30 micrometers, or at least about 35 micrometers, or at least about 40 micrometers, or at least about 45 micrometers, or at least about 50 micrometers, or at least about 55 micrometers, or at least about 60 micrometers, or at least about 65 micrometers, or at least about 70 micrometers, or even at least about 75 micrometers, etc., and may be at least about 10 micrometers. According to still other embodiments, the average thickness of the dielectric substrate 405 is about 1800 micrometers or less, or about 1600 micrometers or less, or about 1 400 micrometers or less, or about 1200 micrometers or less, or about 1000 micrometers or less, or about 800 micrometers or less, or about 600 micrometers or less, or about 400 micrometers or less, or about 200 micrometers or less, or about 190 micrometers or less, or about 180 micrometers or less, or about 170 micrometers It should be further understood that it can be obtained. is about 1800 micrometers or less, or about 1600 micrometers or less, or about 1 400 micrometers or less, or about 1200 micrometers or less, or about 1000 micrometers or less, or about 800 micrometers or less, or about 600 micrometers or less, or about 400 micrometers or less, or about 200 micrometers or less, or about 190 micrometers or less, or about 180 micrometers or less, or about 170 micrometers micrometers or less, or about 800 micrometers or less, or about 600 micrometers or less, or about 400 micrometers or less, or about 200 micrometers or less, or about 190 micrometers or less, or about 180 micrometers or less, or about 170 micrometers micrometers or less, or about 400 micrometers or less, or about 200 micrometers or less, or about 190 micrometers or less, or about 180 micrometers or less, or about 170 micrometers micrometers or less, or about 180 micrometers or less, or about 170 micrometers Less than or equal to 160 micrometers, or less than or equal to about 150 micrometers, or about 140 micrometers or less, or about 120 micrometers or less, or even less than or equal to about 100 micrometers, etc., and may be less than or equal to about 2000 micrometers. The average thickness of the dielectric substrate 405 is between any of the above minimum and maximum values It should be understood that it can be any value (including both end values). The average thickness of the dielectric substrate 405 can be within the range between any of the above minimum and maximum values (including both end values). It should be further understood that this is the case.

[0199] According to still other embodiments, the dielectric substrate 405 may have a specific dielectric tangent (Df) measured at 5 GHz and 20% RH. For example, the dielectric substrate 405 may have a dielectric tangent of about 0. 004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0 .0015 or less, or about 0.0014 or less, etc., and may have a dielectric tangent of about 0.005 or less. The dielectric tangent of the dielectric substrate 405 can be any value (including both end values) between any of the above values. It should be understood that the dielectric tangent of the dielectric substrate 405 can be within the range between any of the above values (including both end values). It should be further understood that this is the case.

[0200] According to still other embodiments, the dielectric substrate 405 may have a specific dielectric tangent (Df) measured at 5 GHz and 80% RH. For example, the dielectric substrate 405 may have a dielectric tangent of about 0. 004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0 or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0 .0015 or less, or about 0.0014 or less, etc., having a dielectric tangent of about 0.005 or less may be. It will be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including both end values). The dielectric tangent of the dielectric substrate 405 can further be understood to be within the range between any of the above values (including both end values). The dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including both end values). It will be further understood that the dielectric tangent of the dielectric substrate 405 can be within the range between any of the above values (including both end values). According to yet another embodiment, the dielectric substrate 405 may have a specific dielectric tangent (Df) measured at 20% RH in the range of 10 GHz.

[0201] For example, the dielectric substrate 405 may have a dielectric tangent of about 0 .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less , or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, etc., having a dielectric tangent of about 0.005 or less The dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including both end values). It will be understood that the dielectric tangent of the dielectric substrate 405 can be within the range between any of the above values (including both end values). The dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including both end values). It will be further understood that the dielectric tangent of the dielectric substrate 405 can be within the range between any of the above values (including both end values). According to yet another embodiment, the dielectric substrate 405 may have a specific dielectric tangent (Df) measured at 80% RH in the range of 10 GHz. For example, the dielectric substrate 405 may have a dielectric tangent of about 0

[0202] .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less , or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, etc., having a dielectric tangent of about 0.005 or less The dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including both end values). It will be understood that the dielectric tangent of the dielectric substrate 405 can be within the range between any of the above values (including both end values). It may be. It should be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including both end values). It should be further understood that the dielectric tangent of the dielectric substrate 405 can be within the range between any of the above values (including both end values). It should be further understood that the dielectric tangent of the dielectric substrate 405 can be within the range between any of the above values (including both end values).

[0203] According to still other embodiments, the dielectric substrate 405 may have a specific dielectric tangent (Df) measured at 28 GHz and 20% RH. For example, the dielectric substrate 405 may have a dielectric tangent of about 0 .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less , or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, etc., and may have a dielectric tangent of about 0.005 or less. It should be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including both end values). It should be further understood that the dielectric tangent of the dielectric substrate 405 can be within the range between any of the above values (including both end values). It should be further understood that the dielectric tangent of the dielectric substrate 405 can be within the range between any of the above values (including both end values). It should be further understood that the dielectric tangent of the dielectric substrate 405 can be within the range between any of the above values (including both end values).

[0204] According to still other embodiments, the dielectric substrate 405 may have a specific dielectric tangent (Df) measured at 28 GHz and 80% RH. For example, the dielectric substrate 405 may have a dielectric tangent of about 0 .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less , or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, etc., and may have a dielectric tangent of about 0.005 or less. It should be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including both end values). It should be further understood that the dielectric tangent of the dielectric substrate 405 can be within the range between any of the above values (including both end values). It should be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including both end values). It will be further understood that it may be within a range (including both end values) between any of the values.

[0205] According to still other embodiments, the dielectric substrate 405 may have a specific dielectric tangent (Df) measured at 20% RH in the range of 39 GHz. For example, the dielectric substrate 405 may have a dielectric tangent of about 0 .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less , or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, etc., and may have a dielectric tangent of about 0.005 or less. It will be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including both end values). It will be further understood that the dielectric tangent of the dielectric substrate 405 may be within a range (including both end values) between any of the above values. It will be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including both end values). It will be further understood that the dielectric tangent of the dielectric substrate 405 may be within a range (including both end values) between any of the above values. It will be further understood that it may be within a range (including both end values) between any of the values.

[0206] According to still other embodiments, the dielectric substrate 405 may have a specific dielectric tangent (Df) measured at 80% RH in the range of 39 GHz. For example, the dielectric substrate 405 may have a dielectric tangent of about 0 .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less , or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, etc., and may have a dielectric tangent of about 0.005 or less. It will be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including both end values). It will be further understood that the dielectric tangent of the dielectric substrate 405 may be within a range (including both end values) between any of the above values. It will be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including both end values). It will be further understood that the dielectric tangent of the dielectric substrate 405 may be within a range (including both end values) between any of the above values. It will be further understood that it may be within a range (including both end values) between any of the values.

[0207] According to still other embodiments, the dielectric substrate 405 may have a specific dielectric tangent (Df) measured at 76 - 81 GHz and 20% RH. For example, the dielectric substrate 405 may have a dielectric tangent of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.001 9 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including both end values). It will be further understood that the dielectric tangent of the dielectric substrate 405 can be within a range between any of the above values (including both end values).

[0208] According to still other embodiments, the dielectric substrate 405 may have a specific dielectric tangent (Df) measured at 76 - 81 GHz and 80% RH. For example, the dielectric substrate 405 may have a dielectric tangent of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.001 9 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including both end values). It will be further understood that the dielectric tangent of the dielectric substrate 405 can be within a range between any of the above values (including both end values).

[0209] According to still other embodiments, the dielectric substrate 405 is IPC - TM - 650 2.4. ​​​​​​It may have a specific glass transition temperature of Rev.C and a specific coefficient of thermal expansion measured according to the Z-axis thermal expansion by TMA. For example, the dielectric substrate 405 may have a coefficient of thermal expansion of about 80 ppm / °C or less. According to another embodiment of the copper-clad laminate formed according to the forming method 300, FIG. 4b includes a schematic view of the copper-clad laminate 401. As shown in FIG. 4a, the copper-clad laminate 401 can include a copper foil layer 4 03 and a dielectric substrate 405 covering the surface of the copper foil layer 403. As shown in FIG. 4b,

[0210] the dielectric substrate 405 can include a polyimide layer 402, a first filled polymer layer 404 covering the polyimide layer 402, and a second filled polymer layer 406 covering the bottom of the polyimide layer 402. As shown in FIG. 4b, the second filled polymer layer 406 can include a second resin matrix component 430 and a second ceramic filler component 440. As shown in FIG. 4b, the second filled polymer layer 406 can include a second resin matrix component 430 and a second ceramic filler component 440. As shown in FIG. 4b, the second filled polymer layer 406 can include a second resin matrix component 430 and a second ceramic filler component 440. According to a specific embodiment, the second ceramic filler component 440 can include a third filler material having specific properties that can improve the performance of the dielectric substrate 40

[0211] 5. According to a specific embodiment, the third filler material of the second ceramic filler component 440 can have a specific size distribution. For the purposes of the embodiments described herein, the particle size distribution of the material, for example, the particle size distribution of the third filler material, can be described using any combination of particle size distribution D values D

[0212] D D and D D 10 D 50 and D 90 For the purposes of the embodiments described herein, the particle size distribution of the material, for example, the particle size distribution of the third filler material, can be described using any combination of particle size distribution D values D 10The value is defined as the particle diameter value such that 10% of the particles are smaller than the value and 90% of the particles are larger than the value. The D value from the particle size distribution is defined as the particle diameter value such that 50% of the particles are smaller than the value 50 and 50% of the particles are larger than the value. The D value from the particle size distribution is defined as the particle diameter value such that 90% of the particles are smaller than the value and 10% of the particles are larger than the value. For the purposes of the embodiments described herein, the particle size measurement of a specific material 90 is performed using laser diffraction spectroscopy. According to a specific embodiment, the third filler material of the second ceramic filler component 440 may have a specific size distribution D value. For example, the D of the third filler material is at least about 0.3 micrometers, or at least about 0.4 micrometers, or at least about 0.5 micrometers, or at least about 0.6 micrometers,

[0213] or at least about 0.7 micrometers, or at least about 0.8 micrometers, or at least about 0.9 micrometers, or at least about 1.0 micrometers, 10 or at least about 1.1 micrometers, or even at least about 1.2 micrometers, 10 and may be at least about 0.2 micrometers, such as. According to still other embodiments the D of the third filler material is about 1.5 micrometers or less, or even about 1.4 micrometers or less, and may be about 1.6 micrometers or less. The D of the third filler material is between any of the above minimum and maximum values (both end values inclusive). According to yet another embodiment, the D of the third filler material 10 is between any of the above minimum and maximum values (both end values inclusive). The D of the third filler material 10 is between any of the above minimum and maximum values (both end values It should be understood that it can be any value (including). The D of the third filler material 10 is within the range (including both end values) between any of the minimum and maximum values of the above and it should be further understood.

[0214] According to other embodiments, the third filler material of the second ceramic filler component 440 may have a specific size distribution D 50 value. For example, the D of the third filler material 50 is , at least about 0.9 micrometers, or at least about 1.0 micrometers, or is at least about 1.1 micrometers, or at least about 1.2 micrometers, or is at least about 1.3 micrometers, or at least about 1.4 micrometers, or is at least about 1.5 micrometers, or at least about 1.6 micrometers, or is at least about 1.7 micrometers, or at least about 1.8 micrometers, or is at least about 1.9 micrometers, or at least about 2.0 micrometers, or is at least about 2.1 micrometers, or even at least about 2.2 micrometers and so on, and it may be at least about 0.8 micrometers. According to still other embodiments , the D of the third filler material 50 is about 2.6 micrometers or less, or about 2.5 micrometers or less, or even about 2.4 micrometers or less, and so on, and it may be about 2.7 micrometers or less. It should be understood that the D of the third filler material 50 can be any value (including both end values) between any of the above minimum and maximum values. The D of the third filler material 50 is between any of the above minimum and maximum values (including both end values)​ It will be further understood that it can be within the range (including).

[0215] According to other embodiments, the third filler material of the second ceramic filler component 440 may have a specific size distribution D 90 value. For example, the D of the third filler material 90 is , at least about 0.9 micrometers, or at least about 1.0 micrometers, or is at least about 1.1 micrometers, or at least about 1.2 micrometers, or is at least about 1.3 micrometers, or at least about 1.4 micrometers, or is at least about 1.5 micrometers, or at least about 1.6 micrometers, or is at least about 1.7 micrometers, or at least about 1.8 micrometers, or is at least about 1.9 micrometers, or at least about 2.0 micrometers, or is at least about 2.1 micrometers, or at least about 2.2 micrometers, or is at least about 2.3 micrometers, or at least about 2.4 micrometers, or is at least about 2.5 micrometers, or at least about 2.6 micrometers, or is even at least about 2.7 micrometers or more, such as at least about 0.8 micrometers torr. According to still other embodiments, the D of the third filler material 90 is about 7 .5 micrometers or less, or about 7.0 micrometers or less, or about 6.5 micrometers meter or less, or about 6.0 micrometers or less, or about 5.5 micrometers or less , or about 5.4 micrometers or less, or about 5.3 micrometers or less, or about 5. 2 micrometers or less, or even about 5.1 micrometers or less, etc., about 8.0 m It may be 1 micrometer or less. D of the third filler material 90 is understood to be any value (including both end values) between any of the above minimum and maximum values. D of the third filler material 90 is further understood to be within the range (including both end values) between any of the above minimum and maximum values.

[0216] According to still other embodiments, the third filler material of the second ceramic filler component 440 may have a specific average particle size measured according to laser diffraction spectroscopy. For example , the average particle size of the third filler material is about 10 micrometers or less, such as about 9 micrometers or less, or about 8 micrometers or less, or about 7 micrometers or less, or about 6 micrometers or less, or about 5 micrometers or less, or about 4 micrometers or less, or about 3 micrometers or less, or even about 2 micrometers or less. It is understood that the average particle size of the third filler material can be any value (including both end values) between any of the above values. It is further understood that the average particle size of the third filler material can be within the range (including both end values) between any of the above values.

[0217] According to still other embodiments, the third filler material of the second ceramic filler component 440 can be described as having a specific particle size distribution span (PSDS), where PSDS is equal to (D - D 90 - D 10 ) / D 50 , where D 90 is equal to the D particle size distribution measurement value of the third filler material 90 and D 10is D of the third filler material 10 Particle size distribution measurement equal to the value, D 50 is D of the third filler material 50 equal to the particle size distribution measurement value. For example, the PSDS of the third filler material is about 4.5 or less, or about 4.0 or less, or about 3.5 or less , or about 3.0 or less, or even about 2.5 or less, etc., and may be about 5 or less. The third PSDS of the filler material can be any value (including both end values) between any of the above values It will be understood. The PSDS of the third filler material can be within the range (including both end values) between any of the above values It will be further understood.

[0218] According to still other embodiments, the third filler material of the second ceramic filler component 440 can be described as having a specific average surface area measured using Brunauer - Emmett - Teller (BET) surface area analysis (nitrogen adsorption ). For example, the third filler material is about 9.9 m / g or less, or about 9.5 m 2 / g or less, or 2 is about 9.0 m / g or less, or about 8.5 m 2 / g or less, or about 8.0 m 2 / g or less, or 2 / g or less, or about 7.5 m 2 / g or less, or about 7.0 m 2 / g or less, or about 6.5 m 2 / g or less, or about 6.0 m 2 / g or less, or about 5.5 m 2 / g or less, or about 5.0 m 2 / g or less, or about 4 .5 m 2 / g or less, or about 4.0 m 2 / g or less, or even about 3.5 m 2 / g or less, etc., about 10 m2 It may have an average surface area of less than or equal to [specific value]. According to yet other embodiments, the third filler material may have an average surface area of at least about 2.4 m 2 / g, such as at least about 1.2 m 2 / g. It will be understood that the average surface area of the third filler material can be any value between (including both end values) any of the above minimum and maximum values. The average surface area of the third filler material will be further understood to be within the range between (including both end values) any of the above minimum and maximum values.

[0219] According to other embodiments, the third filler material of the second ceramic filler component 440 can include specific materials. According to a specific embodiment, the third filler material can include a silica-based compound. According to yet other embodiments, the third filler material can consist of a silica-based compound. According to other embodiments, the third filler material can include silica. According to yet other embodiments, the third filler material can consist of silica.

[0220] According to yet other embodiments, the first filled polymer layer 404 can include a specific content of the second ceramic filler component 440. For example, the content of the second ceramic filler component 440 is at least about 3 volume %, or at least about 32 volume %, or at least about 33 volume %, or at least about 34 volume %, or at least about 35 volume %, or at least about 36 volume %, or at least about 37 volume %, or at least about 38 volume %, or at least about 39 volume %, or at least At least about 40% by volume, or at least about 41% by volume, or at least about 42% by volume, or at least about 43% by volume, or at least about 44% by volume, or at least about 45% by volume , or at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 5 1% by volume, or at least about 52% by volume, or at least about 53% by volume, or even at least about 54% by volume, etc., may be at least about 30% by volume. According to still other embodiments , the content of the second ceramic filler component 440 may be about 56% by volume or less, or even about 55% by volume or less, etc., with respect to the total volume of the first filled polymer layer 40 4. It will be understood that the content of the ceramic filler component 220 can be any value (including both end values) between any of the above minimum and maximum values. It will be further understood that the content of the ceramic filler component 220 can be within the range (including both end values) between any of the above minimum and maximum values.

[0221] According to still other embodiments, the second ceramic filler component 440 can include a third filler material having a specific content . For example, the content of the third filler material is at least about 81% by volume, or at least about 82% by volume, or at least about 83% by volume, or at least about 84% by volume, or at least about 85% by volume, or at least about 86% by volume, or at least about 87% by volume , or at least about 88% by volume, or at least about 89% by volume, or even at least about 90% by volume, etc., with respect to the total volume of the second ceramic filler component 440. It may be at least about 80% by volume, such as 90% by volume. According to still other embodiments , the content of the third filler material is relative to the total volume of the second ceramic filler component 440 and may be about 99% by volume or less, or about 98% by volume or less, or about 97% by volume or less, or about 96% by volume or less, or about 95% by volume or less, or about 94% by volume or less, or about 93% by volume or less, or further about 92% by volume or less, etc., and may be about 100% by volume or less. The content of the third filler material can be any value (including both end values) between any of the above minimum and maximum values . It will be understood that the content of the third filler material can be within the range (including both end values) between any of the above minimum and maximum values.

[0222] According to still other embodiments, the second ceramic filler component 440 can include a fourth filler material.

[0223] According to still other embodiments, the fourth filler material of the second ceramic filler component 440 can include specific materials. For example, the fourth filler material can include a high dielectric constant ceramic material such as a ceramic material having a dielectric constant of at least about 14. According to a specific embodiment, the fourth filler material of the second ceramic filler component 440 can include any high dielectric constant ceramic material such as TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTi O4, or any combination thereof.

[0224] According to still other embodiments, the fourth filler The material can include TiO2. According to still other embodiments, a fourth filler material may consist of TiO2.

[0225] According to still other embodiments, the second ceramic filler component 440 can include a fourth filler material in a specific content . For example, the content of the fourth filler material can be at least about 1 volume %, such as at least about 2 volume %, or at least about 3 volume %, or at least about 4 volume %, or at least about 5 volume %, or at least about 6 volume %, or at least about 7 volume %, or at least about 8 volume %, or at least about 9 volume %, or at least about 10 volume % etc., with respect to the total volume of the second ceramic filler component 440. According to still other embodiments, the content of the fourth filler material can be about 20 volume % or less, such as about 19 volume % or less, or about 18 volume % or less, or about 17 volume % or less, or about 16 volume % or less, or about 15 volume % or less, or about 14 volume % or less, or about 13 volume % or less, or about 12 volume % or less etc., with respect to the total volume of the second ceramic filler component 440. It will be understood that the content of the fourth filler material can be any value between any of the above minimum and maximum values (including both end values). It will be further understood that the content of the fourth filler material can be within the range between any of the above minimum and maximum values (including both end values).

[0226] According to still other embodiments, the second ceramic filler component 440 can include an amorphous material in a specific content . For example, the second ceramic filler component 440 can include at least about 97% of an amorphous material, such as at least about 98% or even at least about 99%. It can contain materials. It will be understood that the content of the amorphous material can be any value between any of the above values (including both end values). It will be further understood that the content of the amorphous material may be within a range between any of the above values (including both end values). It will be understood that the content of the amorphous material can be any value between any of the above values (including both end values). It will be further understood that the content of the amorphous material may be within a range between any of the above values (including both end values).

[0227] According to still other embodiments, the second resin matrix component 430 can include specific materials. For example, the second resin matrix component 430 can include a perfluoropolymer. According to still other embodiments, the second resin matrix component 430 may consist of a perfluoropolymer. For example, the second resin matrix component 430 can include a perfluoropolymer. According to still other embodiments, the second resin matrix component 430 can include a perfluoropolymer. According to still other embodiments, the second resin matrix component 430 may consist of a perfluoropolymer.

[0228] According to still other embodiments, the perfluoropolymer of the second resin matrix component 430 can include a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof. According to other embodiments, the perfluoropolymer of the second resin matrix component 430 may consist of a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof. According to still other embodiments, the perfluoropolymer of the second resin matrix component 430 can include a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof. According to still other embodiments, the perfluoropolymer of the second resin matrix component 430 can include a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof. According to other embodiments, the perfluoropolymer of the second resin matrix component 430 can include a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof. According to other embodiments, the perfluoropolymer of the second resin matrix component 430 can include a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof. According to other embodiments, the perfluoropolymer of the second resin matrix component 430 can include a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof. According to other embodiments, the perfluoropolymer of the second resin matrix component 430 may consist of a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof.

[0229] According to still other embodiments, the perfluoropolymer of the second resin matrix component 430 can include polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to still other embodiments, the perfluoropolymer of the second resin matrix component 430 can include polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to still other embodiments, the perfluoropolymer of the second resin matrix component 430 can include polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to still other embodiments, the perfluoropolymer of the second resin matrix component 430 can include polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. According to still other embodiments, the perfluoropolymer of the second resin matrix component 430 can include polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof. The perfluoropolymer may consist of polytetrafluoroethylene (PTFE), perfluoroalkyl copolymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

[0230] According to still other embodiments, the first filled polymer layer 404 may include a second resin matrix component 430 at a specific content. For example, the content of the second resin matrix component 43 0 is at least, at least about 31% by volume, or at least about 32% by volume, or at least about 33% by volume, or at least about 34% by volume, or at least about 35% by volume, or at least about 36% by volume, or at least about 37% by volume, or at least about 38% by volume, or at least about 39% by volume, or at least about 40% by volume, or at least about 41% by volume, or at least about 42% by volume, or at least about 43% by volume, or at least about 44% by volume, or at least about 45% by volume %, or at least about 46% by volume, or at least about 47% by volume, or at least about 48 % by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or even at least about 55% by volume, etc., and may be about 30% by volume. According to still other embodiments, the content of the first resin matrix component 410 is about 63% by volume or less, or about 62% by volume or less, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less , or even about 57% by volume or less, with respect to the total volume of the first filled polymer layer 404. The content of the second resin matrix component 430 is ​ It can be any value (including both end values) between any of the above minimum and maximum values. It will be understood that the content of the second resin matrix component 430 can be within a range (including both end values) between any of the above minimum and maximum values. It will be further understood that this is the case.

[0231] According to yet another embodiment, the second filled polymer layer 406 may include a specific content of perfluoro polymer. For example, the content of the perfluoropolymer is at least about 46% by volume, or at least about 47% by volume, or at least about 48% by volume, or at least about 49% by volume, or at least about 50% by volume, or at least about 51% by volume, or at least about 52% by volume, or at least about 53% by volume, or at least about 54% by volume, or even at least about 55% by volume, etc., and may be at least about 45% by volume. According to yet another embodiment, the content of the perfluoropolymer is about 62% by volume or less, or about 61% by volume or less, or about 60% by volume or less, or about 59% by volume or less, or about 58% by volume or less, or even about 57% by volume or less, etc., and may be about 63% by volume or less with respect to the total volume of the second filled polymer layer 406. It will be understood that the content of the perfluoropolymer can be any value (including both end values) between any of the above minimum and maximum values. It will be further understood that the content of the perfluoropolymer can be within a range (including both end values) between any of the above minimum and maximum values. It will be understood that the content of the perfluoropolymer can be within a range (including both end values) between any of the above minimum and maximum values. It will be further understood that this is the case. According to yet another embodiment, the dielectric substrate 405 has characteristics measured using X-ray diffraction It will be understood that the content of the perfluoropolymer can be any value (including both end values) between any of the above minimum and maximum values. The content of the perfluoropolymer can be within a range (including both end values) between any of the above minimum and maximum values. It will be further understood that this is the case.

[0232] According to yet another embodiment, the dielectric substrate 405 has characteristics measured using X-ray diffraction It can have a certain porosity. For example, the porosity of the substrate 200 is about 9% by volume or less, or about 8% by volume or less, or about 7% by volume or less, or about 6% by volume or less, or even about 5% by volume or less, etc., and may be about 10% by volume or less. It will be understood that the porosity of the dielectric substrate 405 can be any value between any of the above values (including both end values). The porosity of the dielectric substrate 405 will be further understood to be within the range between any of the above values (including both end values).

[0233] According to still other embodiments, the dielectric substrate 405 may have a specific average thickness. For example, the average thickness of the dielectric substrate 405 is at least about 15 micrometers, or at least about 20 micrometers, or at least about 25 micrometers, or at least about 30 micrometers, or at least about 35 micrometers, or at least about 40 micrometers, or at least about 45 micrometers, or at least about 50 micrometers, or at least about 55 micrometers, or at least about 60 micro- meters, or at least about 65 micrometers, or at least about 70 micrometers, or even at least about 75 micrometers, etc., and may be at least about 10 micrometers. According to still other embodiments, the average thickness of the dielectric substrate 405 is about 1800 micrometers or less, or about 1600 micrometers or less, or about 1 400 micrometers or less, or about 1200 micrometers or less, or about 1000 micro- meters or less, or about 800 micrometers or less, or about 600 micrometers or less, or about 400 micrometers or less, or about 200 micrometers or less, or ​​​​ 190 micrometers or less, or about 180 micrometers or less, or about 170 micro meters or less, or about 160 micrometers or less, or about 150 micrometers or less, or about 140 micrometers or less, or about 120 micrometers or less, or even more preferably about 100 micrometers or less, etc., may be 2000 micrometers or less The average thickness of the dielectric substrate 405 may be any value between the above minimum and maximum values (including both ends). It will be understood that the average thickness of the dielectric substrate 405 can be any value between the above minimum and maximum values (including both ends). It will be further understood that the average thickness of the dielectric substrate 405 is within the range between any of the above minimum and maximum values (including both ends). It will be further understood.

[0234] According to still other embodiments, the dielectric substrate 405 may have a specific dielectric tangent (Df) measured at 5 GHz and 20% RH. For example, the dielectric substrate 405 may have a dielectric tangent of about 0. 004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0 .0015 or less, or about 0.0014 or less, etc., may have a dielectric tangent of about 0.005 or less. The dielectric tangent of the dielectric substrate 405 may be any value between any of the above values (including both ends). It will be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including both ends). It will be further understood that the dielectric tangent of the dielectric substrate 405 is within the range between any of the above values (including both ends). It will be further understood. It will be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including both ends). It will be further understood that the dielectric tangent of the dielectric substrate 405 is within the range between any of the above values (including both ends).

[0235] According to still other embodiments, the dielectric substrate 405 may have a specific dielectric tangent (Df) measured at 5 GHz and 80% RH. For example, the dielectric substrate 405 may have a dielectric tangent of about 0. 004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about .0015 or less, or about 0.0014 or less, etc., having a dielectric tangent of about 0.005 or less may be. It will be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including both end values). It will be further understood that the dielectric tangent of the dielectric substrate 405 can be within the range between any of the above values (including both end values).

[0236] According to still other embodiments, the dielectric substrate 405 may have a specific dielectric tangent (Df) measured at 20% RH in the range of 10 GHz. For example, the dielectric substrate 405 may have a dielectric tangent of about 0 .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less , or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, etc., having a dielectric tangent of about 0.005 or less. It will be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including both end values). It will be further understood that the dielectric tangent of the dielectric substrate 405 can be within the range between any of the above values (including both end values).

[0237] According to still other embodiments, the dielectric substrate 405 may have a specific dielectric tangent (Df) measured at 80% RH in the range of 10 GHz. For example, the dielectric substrate 405 may have a dielectric tangent of about 0 .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less , or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, etc. having a dielectric tangent of about 0.005 or less, such as 0.0015 or less, or about 0.0014 or less may be. It will be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including both end values). The dielectric tangent of the dielectric substrate 405 can further be understood to be within a range between any of the above values (including both end values).

[0238] According to yet another embodiment, the dielectric substrate 405 may have a specific dielectric tangent (Df) measured at 28 GHz and 20% RH. For example, the dielectric substrate 405 may have a dielectric tangent of about 0 .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less , or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, such as having a dielectric tangent of about 0.005 or less may be. It will be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including both end values). The dielectric tangent of the dielectric substrate 405 can further be understood to be within a range between any of the above values (including both end values).

[0239] According to yet another embodiment, the dielectric substrate 405 may have a specific dielectric tangent (Df) measured at 28 GHz and 80% RH. For example, the dielectric substrate 405 may have a dielectric tangent of about 0 .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less , or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, such as having a dielectric tangent of about 0.005 or less may be. It will be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including both end values). The dielectric tangent of the dielectric substrate 405 can further be understood to be within a range between any of the above values (including both end values). ​​​​​​It should be understood that it can be any value (including the above). The dielectric tangent of the dielectric substrate 405 can be within the range between any of the above values (including both end values).

[0240] According to still other embodiments, the dielectric substrate 405 may have a specific dielectric tangent (Df) measured at 20% RH in the range of 39 GHz. For example, the dielectric substrate 405 may have a dielectric tangent of about 0 .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less , or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, etc., having a dielectric tangent of about 0.005 or less. It should be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including both end values). The dielectric tangent of the dielectric substrate 405 can be further understood to be within the range between any of the above values (including both end values). It should be understood that it can be any value (including the above). The dielectric tangent of the dielectric substrate 405 can be within the range between any of the above values (including both end values). It should be further understood that it can be within the range between any of the above values (including both end values).

[0241] According to still other embodiments, the dielectric substrate 405 may have a specific dielectric tangent (Df) measured at 80% RH in the range of 39 GHz. For example, the dielectric substrate 405 may have a dielectric tangent of about 0 .004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.0019 or less , or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less, etc., having a dielectric tangent of about 0.005 or less. It should be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including both end values). The dielectric tangent of the dielectric substrate 405 can be further understood to be within the range between any of the above values (including both end values). It should be understood that it can be any value (including the above). The dielectric tangent of the dielectric substrate 405 can be within the range between any of the above values (including both end values). It should be further understood that it can be within the range between any of the above values (including both end values).

[0242] According to still other embodiments, the dielectric substrate 405 may have a specific dielectric tangent (Df) measured at 76-81 GHz and 20% RH. For example, the dielectric substrate 405 may have a dielectric tangent of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.001 9 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including the end values). The dielectric tangent of the dielectric substrate 405 can be further understood to be within a range between any of the above values (including the end values). It will be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including the end values). The dielectric tangent of the dielectric substrate 405 can be further understood to be within a range between any of the above values (including the end values). It will be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including the end values). The dielectric tangent of the dielectric substrate 405 can be further understood to be within a range between any of the above values (including the end values). It will be further understood that the dielectric tangent of the dielectric substrate 405 can be within a range between any of the above values (including the end values).

[0243] According to still other embodiments, the dielectric substrate 405 may have a specific dielectric tangent (Df) measured at 76-81 GHz and 80% RH. For example, the dielectric substrate 405 may have a dielectric tangent of about 0.005 or less, such as about 0.004 or less, or about 0.003 or less, or about 0.002 or less, or about 0.001 9 or less, or about 0.0018 or less, or about 0.0017 or less, or about 0.0016 or less, or about 0.0015 or less, or about 0.0014 or less. It will be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including the end values). The dielectric tangent of the dielectric substrate 405 can be further understood to be within a range between any of the above values (including the end values). It will be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including the end values). The dielectric tangent of the dielectric substrate 405 can be further understood to be within a range between any of the above values (including the end values). It will be understood that the dielectric tangent of the dielectric substrate 405 can be any value between any of the above values (including the end values). The dielectric tangent of the dielectric substrate 405 can be further understood to be within a range between any of the above values (including the end values). It will be further understood that the dielectric tangent of the dielectric substrate 405 can be within a range between any of the above values (including the end values).

[0244] According to still other embodiments, the dielectric substrate 405 is IPC-TM-650 2.4.​​ Specific glass transition temperature and Z-axis thermal expansion measured according to Rev. C 24 For example, the dielectric substrate 405 may have a thermal expansion coefficient of about 80 ppm / ° C. or less. The tension factor may be

[0245] Turning now to a method of forming a printed circuit board, FIG. 5 includes a schematic diagram illustrating a forming method 500 for forming a printed circuit board, according to an embodiment. According to certain embodiments, the method 500 includes a first step 510 of providing a copper foil layer; A second step 520 of forming a dielectric substrate overlying the copper foil layer. According to a particular embodiment, the step of forming the dielectric substrate includes forming a first resin matrix. The precursor component and the first ceramic filler precursor component are combined to form a first forming mixture. forming a first filled polymer layer overlying the polyimide layer; and applying the first forming mixture to the first filled polymer layer overlying the polyimide layer. and forming a dielectric substrate on the substrate.

[0246] All descriptions provided herein regarding the method of formation 100 and / or the method of formation 300 , details, and features may be further applied to or may be incorporated in the corresponding aspects of the forming method 500. It will be appreciated that this can be explained.

[0247] Turning now to an embodiment of a printed circuit board formed according to method 500, FIG. 6a includes a schematic diagram of a printed circuit board 600. As shown in FIG. The circuit board 600 includes a copper foil layer 603 and a dielectric substrate 605 that covers the surface of the copper foil layer 603. As further shown in FIG. 6a, the dielectric substrate 605 may include a polyimide layer 602. and a first filled polymer layer 604 covering the polyimide layer 602, can be included . As shown in FIG. 6a, the first filled polymer layer 604 can include a first resin matrix component 610 and a first ceramic filler component 620.

[0248] Also in this case, all the explanations provided in this specification regarding the dielectric substrate 200(405) and / or the copper-clad laminate 400 can be further applied to modified aspects of the printed circuit board 600 including all the components of the printed circuit board 600. It will be understood.

[0249] According to another embodiment of the printed circuit board formed according to the forming method 500, FIG. 6 b includes a schematic diagram of the printed circuit board 601. As shown in FIG. 6b, the printed circuit board 601 can include a copper foil layer 603 and a dielectric substrate 605 covering the surface of the copper foil layer 603 . As shown in FIG. 6b, the dielectric substrate 605 can include a polyimide layer 602, a first filled polymer layer 604 covering the polyimide layer 602, and a second filled polymer layer 606 covering the bottom of the polyimide layer 602 . As shown in FIG. 6b, the second filled polymer layer 606 can include a second resin matrix component 630 and a second ceramic filler component 640 . Also in this case, all the explanations provided in this specification regarding the dielectric substrate 200(405) and / or the copper-clad laminate 400 can be further applied to modified aspects of the printed circuit board 601 including all the components of the printed circuit board 601. It will be understood.

[0250] Also in this case, all the explanations provided in this specification regarding the dielectric substrate 200(405) and / or the copper-clad laminate 400 can be further applied to modified aspects of the printed circuit board 601 including all the components of the printed circuit board 601. It will be understood.

[0251] Many different aspects and embodiments are possible. Some of these aspects and embodiments is described in this specification. After reading this specification, those skilled in the art will understand that these aspects and embodiments are merely exemplary and do not limit the scope of the present invention. The embodiments can conform to any one or more of the embodiments listed below.

[0252] Embodiment 1. A dielectric substrate comprising a polyimide layer and a first filled polymer layer covering the polyimide layer, wherein the first filled polymer layer contains a first resin matrix component and a first ceramic filler component, and the first ceramic filler component contains a first filler material, and the first filler material further has an average particle size of about 10 micrometers or less. Dielectric substrate.

[0253] Embodiment 2. The particle size distribution of the silica filler material of the first ceramic filler component is at least about 0.2 micrometers and D of about 1.6 or less 10 , at least about 0.5 micro chrometers and D of about 2.7 micrometers or less 50 , and at least about 0.8 micro chrometers and D of about 4.7 micrometers or less 90 The dielectric substrate according to Embodiment 1, including .

[0254] Embodiment 3. The silica filler material of the first ceramic filler component has a particle size distribution span (PSDS) of about 8 or less, and PSDS is equal to (D -D 90 -D 10 ) / D 50 , wherein D 90 is equal to the D of the silica filler material 90 particle size distribution measurement value, and D 10 is equal to the D of the first filler material 10 particle size distribution measurement value, and D 50D5 of the first filler material 2. The dielectric substrate of embodiment 1, having a particle size distribution measurement equal to 0.

[0255] Embodiment 4. The first filler material is about 10 m 2 / g or less. 2. A dielectric substrate as described in embodiment 1.

[0256] Embodiment 5. The composite of embodiment 1, wherein the first filler material comprises a silica-based compound. Electrical circuit board.

[0257] Embodiment 6. The dielectric substrate of embodiment 1, wherein the first filler material comprises silica. .

[0258] Embodiment 7. The first resin matrix component comprises a perfluoropolymer. The dielectric substrate according to embodiment 1.

[0259] Embodiment 8. The perfluoropolymer is a copolymer of tetrafluoroethylene (TFE). copolymer of hexafluoropropylene (HFP), tetrafluoroethylene (T FE), or any combination thereof. Law.

[0260] Embodiment 9. The perfluoropolymer is polytetrafluoroethylene (PTFE), Perfluoroalkoxy polymer resin (PFA), Fluorinated ethylene propylene (FEP 8. The dielectric substrate of claim 7, comprising:

[0261] Embodiment 10. The perfluoropolymer is polytetrafluoroethylene (PTFE). , Perfluoroalkoxy Polymer Resin (PFA), Fluorinated Ethylene Propylene (FE The dielectric substrate according to Embodiment 7, which consists of (P), or any combination thereof.

[0262] Embodiment 11. The content of the first resin matrix component is at least about 45% by volume based on the total volume of the first filled polymer layer. The dielectric substrate according to Embodiment 1. The dielectric substrate according to Embodiment 1, wherein the content of the first resin matrix component is about 63% by volume or less based on the total volume of the first filled polymer layer.

[0263] Embodiment 12. The content of the first resin matrix component is about 63% by volume or less based on the total volume of the first filled polymer layer. The dielectric substrate according to Embodiment 1. The dielectric substrate according to Embodiment 1, wherein the content of the first resin matrix component is about 63% by volume or less based on the total volume of the first filled polymer layer.

[0264] Embodiment 13. The content of the perfluoropolymer is at least about 45% by volume based on the total volume of the first filled polymer layer. The dielectric substrate according to Embodiment 7. The dielectric substrate according to Embodiment 7, wherein the content of the perfluoropolymer is about 63% by volume or less based on the total volume of the first filled polymer layer.

[0265] Embodiment 14. The content of the perfluoropolymer is about 63% by volume or less based on the total volume of the first filled polymer layer. The dielectric substrate according to Embodiment 7. The dielectric substrate according to Embodiment 7, wherein the content of the perfluoropolymer is about 63% by volume or less based on the total volume of the first filled polymer layer.

[0266] Embodiment 15. The content of the first ceramic filler component is at least about 30% by volume based on the total volume of the first filled polymer layer. The dielectric substrate according to Embodiment 1. The dielectric substrate according to Embodiment 1, wherein the content of the first ceramic filler component is about 57% by volume or less based on the total volume of the first filled polymer layer.

[0267] Embodiment 16. The content of the first ceramic filler component is about 57% by volume or less based on the total volume of the first filled polymer layer. The dielectric substrate according to Embodiment 1. The dielectric substrate according to Embodiment 1, wherein the content of the first ceramic filler component is about 57% by volume or less based on the total volume of the first filled polymer layer.

[0268] Embodiment 17. The content of the first filler material is at least about 80% by volume based on the total volume of the first ceramic filler component. The dielectric substrate according to Embodiment 1. The dielectric substrate according to Embodiment 1, wherein the content of the first filler material is about 80% by volume or less based on the total volume of the first ceramic filler component.

[0269] Embodiment 18. The content of the first filler material is about 80% by volume or less based on the total volume of the first ceramic filler component. The dielectric substrate according to Embodiment 1, which is about 100% by volume or less with respect to the volume.

[0270] Embodiment 19. The first ceramic filler component further includes a second filler material. The dielectric substrate according to Embodiment 1.

[0271] Embodiment 20. The second filler material of the first ceramic filler component includes a high dielectric constant ceramic material. The dielectric substrate according to Embodiment 19.

[0272] Embodiment 21. The high dielectric constant ceramic material has a dielectric constant of at least about 14. The dielectric substrate according to Embodiment 20.

[0273] Embodiment 22. The second ceramic filler component further includes TiO2, SrTiO3, ZrTi2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof. The dielectric substrate according to Embodiment 20. The dielectric substrate according to Embodiment 20.

[0274] Embodiment 23. The content of the second filler material of the first ceramic filler component is at least about 1% by volume with respect to the total volume of the first ceramic filler component. The dielectric substrate according to Embodiment 19. The dielectric substrate according to Embodiment 19.

[0275] Embodiment 24. The content of the second filler material of the first ceramic filler component is about 20% by volume or less with respect to the total volume of the first ceramic filler component. The dielectric substrate according to Embodiment 19. The dielectric substrate according to Embodiment 19.

[0276] Embodiment 25. The content of the TiO2 filler material in the first ceramic filler component is at least about 1% by volume with respect to the total volume of the first ceramic filler component. The dielectric substrate according to Embodiment 22. The dielectric substrate according to Embodiment 22.

[0277] Embodiment 26. The content of the TiO2 filler material in the first ceramic filler component is about 20% by volume or less with respect to the total volume of the first ceramic filler component, Embodiment 2 The dielectric substrate according to Embodiment 2.

[0278] Embodiment 27. The first ceramic filler component is at least about 97%, Embodiment The dielectric substrate according to Embodiment 1.

[0279] Embodiment 28. The dielectric substrate further includes a second filled polymer layer that covers the bottom of the polyimide layer, and the second filled polymer layer includes a second resin matrix component and a second ceramic filler component, and the second ceramic filler component includes a silica filler material, and the first filler material further has an average particle size of about 10 micrometers or less, Embodiment 1 The dielectric substrate according to Embodiment 1. The dielectric substrate according to Embodiment 1.

[0280] Embodiment 29. The particle size distribution of the silica filler material in the second ceramic filler component is at least about 0.2 micrometers and D of about 1.6 or less 10 , at least about 0.5 ma icrometers and D of about 2.7 micrometers or less 50 , and at least about 0.8 ma icrometers and D of about 4.7 micrometers or less 90 including, the dielectric substrate according to Embodiment 28 The dielectric substrate according to Embodiment 28.

[0281] Embodiment 30. The silica filler material of the second ceramic filler component has a particle size distribution span (PSDS) of about 8 or less, and PSDS is (D -D 90 -D 10 ) / D 50 equal to , where D 90 is the D of the silica filler material90 equal to the particle size distribution measurement value, D 10 is the D of the filler material of No. 10 equal to the particle size distribution measurement value, D 50 is the D of the first filler material 50 A dielectric substrate according to Embodiment 28, which is equal to the particle size distribution measurement value.

[0282] Embodiment 31. The first filler material further has an average surface area of about 10 m 2 / g or less A dielectric substrate according to Embodiment 28.

[0283] Embodiment 32. The second filler material contains a silica-based compound, a dielectric substrate according to Embodiment 28 described.

[0284] Embodiment 33. The second filler material contains silica, a dielectric substrate according to Embodiment 28 substrate.

[0285] Embodiment 34. The second resin matrix contains a perfluoropolymer, an embodiment 28 dielectric substrate described.

[0286] Embodiment 35. The perfluoropolymer is a copolymer of tetrafluoroethylene (TFE) mer, a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene ( TFE), or any combination thereof, a method according to Embodiment 34 described.

[0287] Embodiment 36. The perfluoropolymer is polytetrafluoroethylene (PTFE) , perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FE P), or any combination thereof, a dielectric substrate according to Embodiment 34.

[0288] Embodiment 37. The perfluoropolymer is polytetrafluoroethylene (PTFE). , a perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FE P), or a dielectric substrate according to Embodiment 34 comprising any combination thereof.

[0289] Embodiment 38. The content of the second resin matrix component is at least about 45% by volume based on the total volume of the second filled polymer layer, a dielectric substrate according to Embodiment 28.

[0290] Embodiment 39. The content of the second resin matrix component is about 63% by volume or less based on the total volume of the second filled polymer layer, a dielectric substrate according to Embodiment 28.

[0291] Embodiment 40. The content of the perfluoropolymer is at least about 45% by volume based on the total volume of the second filled polymer layer , a dielectric substrate according to Embodiment 28.

[0292] Embodiment 41. The content of the perfluoropolymer is about 63% by volume or less based on the total volume of the second filled polymer layer , a dielectric substrate according to Embodiment 28.

[0293] Embodiment 42. The content of the second ceramic filler component is at least about 30% by volume based on the total volume of the second filled polymer layer, a dielectric substrate according to Embodiment 28.

[0294] Embodiment 43. The content of the second ceramic filler component is about 57% by volume or less based on the total volume of the second filled polymer layer, a dielectric substrate according to Embodiment 28.

[0295] Embodiment 44. The content of the second filler material is based on the total of the second ceramic filler component The dielectric substrate according to Embodiment 28, which is at least about 80% by volume with respect to the volume.

[0296] Embodiment 45. The content of the second filler material is the total of the second ceramic filler component The dielectric substrate according to Embodiment 28, which is about 100% by volume or less with respect to the volume.

[0297] Embodiment 46. The second ceramic filler component further includes a TiO2 filler material The dielectric substrate according to Embodiment 28.

[0298] Embodiment 47. The content of the TiO2 filler material is at least about 1% by volume with respect to the total volume of the second ceramic filler component. The dielectric substrate according to Embodiment 46. The dielectric substrate according to Embodiment 46, which is about 20% by volume or less with respect to the total volume of the second ceramic filler component.

[0299] Embodiment 48. The content of the TiO2 filler material is about 20% by volume or less with respect to the total volume of the second ceramic filler component. The dielectric substrate according to Embodiment 46. The dielectric substrate according to Embodiment 46, which is about 20% by volume or less with respect to the total volume of the second ceramic filler component.

[0300] Embodiment 49. At least about 97% of the second ceramic filler component is amorphous. The dielectric substrate of Embodiment 28. The dielectric substrate of Embodiment 28.

[0301] Embodiment 50. The dielectric substrate has a porosity of about 10% by volume or less. The dielectric substrate according to any one of Embodiments 1 and 28.

[0302] Embodiment 51. The dielectric substrate has an average thickness of at least about 10 micrometers. The dielectric substrate according to any one of Embodiments 1 and 28. The dielectric substrate according to any one of Embodiments 1 and 28.

[0303] Embodiment 52. The dielectric substrate has an average thickness of about 200 micrometers or less. The dielectric substrate according to any one of Embodiments 1 and 28.

[0304] Embodiment 53. The dielectric substrate has a dielectric tangent of about 0.005 or less (5 GHz, 20% RH ), and is the dielectric substrate according to any one of Embodiments 1 and 28.

[0305] Embodiment 54. The dielectric substrate has a dielectric tangent of about 0.0014 or less (5 GHz, 20% R H), and is the dielectric substrate according to any one of Embodiments 1 and 28.

[0306] Embodiment 55. The dielectric substrate has a thermal expansion coefficient (x / y axis) of about 80 ppm / °C or less and is the dielectric substrate according to any one of Embodiments 1 and 28.

[0307] Embodiment 56. The dielectric substrate has a peel strength of at least about 5 lb / in between the first filled polymer layer and the polyimide layer, and is the dielectric substrate according to any one of Embodiments 1 and 28. substrate.

[0308] Embodiment 57. The dielectric substrate has a peel strength of at least about 5 lb / in between the second filled polymer layer and the polyimide layer, and is the dielectric substrate according to any one of Embodiments 1 and 28. substrate.

[0309] Embodiment 58. The dielectric substrate has a moisture absorption rate of about 1.2% or less, and is the dielectric substrate according to any one of Embodiments 1 and 2 8.

[0310] Embodiment 59. A copper-clad laminate includes a copper foil layer and a dielectric substrate covering the copper foil layer. The dielectric substrate includes a polyimide layer and a first filled polymer layer covering the polyimide layer. The first filled polymer layer includes a first resin matrix component and a first ceramic filler component. The first ceramic filler component includes a first filler material. and includes , the first filler material further has an average particle size of about 10 micrometers or less, and is a copper-clad laminate. Laminate.

[0311] Embodiment 60. The particle size distribution of the silica filler material of the first ceramic filler component is at least about 0.2 micrometers and D of about 1.6 or less 10 , at least about 0.5 m icrometers and D of about 2.7 micrometers or less 50 , and at least about 0.8 m icrometers and D of about 4.7 micrometers or less 90 including, the copper-clad laminate according to Embodiment 59 .

[0312] Embodiment 61. The silica filler material of the first ceramic filler component has a particle size distribution span (PSDS) of about 8 or less, and the PSDS is (D - D 90 - D 10 ) / D 50 equal to , where D 90 is equal to the D 90 particle size distribution measurement value of the silica filler material, D 10 is the first D of the filler material 10 equal to the particle size distribution measurement value, D 50 is the D of the first filler material 50 equal to the particle size distribution measurement value, the copper-clad laminate according to Embodiment 59.

[0313] Embodiment 62. The first filler material further has an average surface area of about 10 m 2 / g or less, the copper-clad laminate according to Embodiment 59.

[0314] Embodiment 63. The first filler material contains a silica-based compound, the copper-clad laminate according to Embodiment 59 .

[0315] ​Embodiment 64. The first filler material is the copper-clad laminate described in Embodiment 59 that contains silica. Laminate.

[0316] Embodiment 65. The first resin matrix component is the copper-clad laminate described in Embodiment 59 that contains a perfluoropolymer. Laminate.

[0317] Embodiment 66. The perfluoropolymer contains a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof, and is the method described in Embodiment 65. A copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof, and is the laminate described in Embodiment 65. Laminate. Method.

[0318] Embodiment 67. The perfluoropolymer contains polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof, and is the copper-clad laminate described in Embodiment 65. A copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof, and is the laminate described in Embodiment 65. Laminate.

[0319] Embodiment 68. The perfluoropolymer consists of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FEP), or any combination thereof, and is the copper-clad laminate described in Embodiment 65. A copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene (TFE), or any combination thereof, and is the laminate described in Embodiment 65. Laminate.

[0320] Embodiment 69. The content of the first resin matrix component is at least about 45% by volume based on the total volume of the first filled polymer layer, and is the copper-clad laminate described in Embodiment 59. Laminate.

[0321] Embodiment 70. The content of the first resin matrix component is about 63% by volume or less based on the total volume of the first filled polymer layer, and is the copper-clad laminate described in Embodiment 59. Laminate.

[0322] Embodiment 71. The copper-clad laminate of Embodiment 65, wherein the content of the perfluoropolymer is at least about 45% by volume based on the total volume of the first filled polymer layer.

[0323] Embodiment 72. The copper-clad laminate according to Embodiment 65, wherein the content of the perfluoropolymer is about 63% by volume or less based on the total volume of the first filled polymer layer.

[0324] Embodiment 73. The copper-clad laminate of Embodiment 59, wherein the content of the first ceramic filler component is at least about 50% by volume based on the total volume of the first filled polymer layer.

[0325] Embodiment 74. The copper-clad laminate of Embodiment 59, wherein the content of the first ceramic filler component is about 57% by volume or less based on the total volume of the first filled polymer layer.

[0326] Embodiment 75. The copper-clad laminate of Embodiment 59, wherein the content of the first filler material is at least about 80% by volume based on the total volume of the first ceramic filler component.

[0327] Embodiment 76. The copper-clad laminate of Embodiment 59, wherein the content of the first filler material is about 100% by volume or less based on the total volume of the first ceramic filler component.

[0328] Embodiment 77. The copper-clad laminate of Embodiment 59, wherein the first ceramic filler component further contains a second filler material.

[0329] Embodiment 78. The copper-clad laminate of Embodiment 77, wherein the second filler material of the first ceramic filler component contains a high dielectric constant ceramic material.

[0330] Embodiment 79. The high dielectric constant ceramic material has a dielectric constant of at least about 14, the copper-clad laminate of Embodiment 78.

[0331] Embodiment 80. The first ceramic filler component further includes TiO2, SrTiO3, ZrTi i2O6, MgTiO3, CaTiO3, BaTiO4, or any combination thereof, the copper-clad laminate described in Embodiment 78.

[0332] Embodiment 81. The content of the second filler material of the first ceramic filler component is at least about 1 volume % with respect to the total volume of the first ceramic filler component, the copper-clad laminate of Embodiment 7 7.

[0333] Embodiment 82. The content of the second filler material of the first ceramic filler component is about 20 volume % or less with respect to the total volume of the first ceramic filler component, the copper-clad laminate described in Embodiment 77.

[0334] Embodiment 83. The content of the TiO2 filler material in the first ceramic filler component is at least about 1 volume % with respect to the total volume of the first ceramic filler component, the copper-clad laminate described in Embodiment 80.

[0335] Embodiment 84. The content of the TiO2 filler material in the first ceramic filler component is about 20 volume % or less with respect to the total volume of the first ceramic filler component, the copper-clad laminate described in Embodiment 8 0.

[0336] Embodiment 85. At least about 97% of the first ceramic filler component is amorphous, the copper-clad laminate of Embodiment 59.

[0337] Embodiment 86. The dielectric substrate further includes a second filled polymer layer that covers the bottom of the polyimide layer. The second filled polymer layer includes a second resin matrix component and a second ceramic filler component. The second ceramic filler component includes a silica filler material. The first filler material further has an average particle diameter of about 10 micrometers or less. The copper-clad laminate according to Embodiment 59.

[0338] Embodiment 87. The particle size distribution of the silica filler material of the second ceramic filler component is at least about 0.2 micrometers and D of about 1.6 or less 10 , at least about 0.5 mic rometers and D of about 2.7 micrometers or less 50 , and at least about 0.8 mic rometers and D of about 4.7 micrometers or less 90 . The copper-clad laminate according to Embodiment 86 .

[0339] Embodiment 88. The second filler material of the second ceramic filler component has a particle size distribution span (PSDS) of about 8 or less. The PSDS is equal to (D -D 90 ) / D 10 ), where D 50 is equal to the measured value of the D of the silica filler material, D is equal to the measured value of the D of the first filler material, and D 90 is equal to the measured value of the D of the first filler material. The copper-clad laminate according to Embodiment 86. 90 10 10 50 50

[0340] 50

[0340] Embodiment 89. The second filler material further has an average surface area of about 10 m 2 / g or less. ​The copper-clad laminate according to Embodiment 86.

[0341] Embodiment 90. The second filler material contains a silica-based compound, and the copper-clad laminate of Embodiment 86.

[0342] Embodiment 91. The second filler material contains silica, and the copper-clad laminate of Embodiment 86.

[0343] Embodiment 92. The second resin matrix contains a perfluoropolymer, and the copper-clad laminate according to Embodiment 86.

[0344] Embodiment 93. The perfluoropolymer is a copolymer of tetrafluoroethylene (TFE), a copolymer of hexafluoropropylene (HFP), a terpolymer of tetrafluoroethylene ( TFE), or any combination thereof, and the method according to Embodiment 92. TFE), or any combination thereof, and the method according to Embodiment 92. The method according to Embodiment 92.

[0345] Embodiment 94. The perfluoropolymer is polytetrafluoroethylene (PTFE) , perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FE P), or any combination thereof, and the copper-clad laminate according to Embodiment 92.

[0346] Embodiment 95. The perfluoropolymer consists of polytetrafluoroethylene (PTFE) , perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene (FE P), or any combination thereof, and the cop...

Claims

1. A dielectric substrate, a polyimide layer and a first filled polymer layer overlying the polyimide layer; The first filled polymer layer comprises a first resin matrix component; a first ceramic filler component, said first ceramic filler component comprising , a first filler material, the first filler material being about 10 micrometers or less The dielectric substrate further has an average grain size of

2. The particle size distribution of the silica filler material of the first ceramic filler component is D of at least about 0.2 micrometers and not more than about 1.6 １０ and, D of at least about 0.5 micrometers and no more than about 2.7 micrometers ５０ and, D of at least about 0.8 micrometers and no more than about 4.7 micrometers ９０ The dielectric substrate of claim 1 .

3. The silica filler material of the first ceramic filler component has a particle size distribution of about 8 or less. The PSDS has a fabric span (PSDS), and the PSDS has a ９０ -D １０ ) / D ５０ where , D ９０ is the D of the silica filler material ９０ D is equal to the particle size distribution measurement １０ The above D of the first filler material １０ D is equal to the particle size distribution measurement ５０ The first filler material Fee D ５０ The dielectric substrate of claim 1 , wherein the particle size distribution is equal to a particle size distribution measurement.

4. The first filler material is about 10 m ２ / g or less.

2. The dielectric substrate according to claim 1.

5. The dielectric substrate of claim 1 , wherein the first filler material comprises a silica-based compound.

6. The composition of claim 1 , wherein the first resin matrix component comprises a perfluoropolymer. Dielectric substrate.

7. The content of the first resin matrix component is based on the total volume of the first filled polymer layer.

10. The dielectric substrate of claim 1, wherein the dielectric substrate comprises at least about 45% by volume and no more than about 63% by volume of the dielectric substrate. Board.

8. The content of the first ceramic filler component is determined by the total volume of the first filled polymer layer.

2. The dielectric of claim 1, wherein the dielectric constant is at least about 30% by volume and not more than about 57% by volume. substrate.

9. The content of the first filler material is based on the total volume of the first ceramic filler component.

10. The dielectric of claim 1, wherein the dielectric is at least about 80% by volume and not more than about 100% by volume. substrate.

10. The method of claim 1 , wherein the first ceramic filler component further comprises a second filler material. The dielectric substrate described herein.

11. The second filler material of the first ceramic filler component is a high dielectric constant ceramic. The dielectric substrate of claim 10 comprising a quartz material.

12. the dielectric substrate further comprises a second filled polymer layer underlying the polyimide layer; The second filled polymer layer comprises a second resin matrix component and a second ceramic filler. and the second ceramic filler component comprises a silica filler material; The first filler material further has an average particle size of about 10 micrometers or less. Item 2. The dielectric substrate according to item 1.

13. The dielectric substrate of claim 12 , wherein the second filler material comprises a silica-based compound. 。

14. A copper clad laminate including a copper foil layer and a dielectric substrate covering the copper foil layer, The electric board is a polyimide layer and a first filled polymer layer overlying the polyimide layer; The first filled polymer layer comprises a first resin matrix component and a first ceramic filler. a first ceramic filler component comprising a first filler material; The first filler material further has an average particle size of about 10 micrometers or less. Laminated plate.

15. A printed circuit board comprising a copper clad laminate, the copper clad laminate comprising: A copper foil layer and a dielectric substrate covering the copper foil layer, the dielectric substrate comprising: a polyimide layer and a first filled polymer layer overlying the polyimide layer. The first filled polymer layer comprises a first resin matrix component and a first ceramic filler. and a first ceramic filler component, the first ceramic filler component comprising a first filler material, The first filler material further has an average particle size of about 10 micrometers or less. Circuit board.

Images