Display device

Abstract

To provide a display device with a light detecting function, and a display device with high convenience.SOLUTION: A display device includes a light-receiving element and a light-emitting element in a display part. The light-receiving element includes a first pixel electrode, an active layer, and a common electrode. The light-emitting element includes a second pixel electrode, a light-emitting layer, and a common electrode. The active layer exists on the first pixel electrode. The active layer contains a first organic compound. The light-emitting layer exists on the second pixel electrode. The light-emitting layer includes a second organic compound that is different from the first organic compound. The common electrode includes a part overlapping with the first pixel electrode through the active layer, and a part overlapping with the second pixel electrode through the light-emitting layer. The display device preferably further includes a common layer existing on the first pixel electrode and the second pixel electrode. The common layer includes a part overlapping with the active layer and a part overlapping with the light-emitting layer.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] One aspect of the present invention relates to a display device, a display module, and an electronic device. One aspect of the present invention relates to a display device having a light-receiving element and a light-emitting element.

[0002] Note that one aspect of the present invention is not limited to the above technical field. As the technical field of one aspect of the present invention semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), and their driving methods, or their manufacturing methods can be cited as an example.

Background Art

[0003] In recent years, display devices have been expected to be applied to various uses. For example, as uses of large display devices home television sets (also referred to as TVs or television receivers), digital signage, PID (Public c Information Display), etc. can be cited. In addition, as mobile information terminals the development of smartphones and tablet terminals equipped with touch panels has been advanced. As display devices, for example, light-emitting devices having light-emitting elements have been developed. Electroluminescence (hereinafter referred to as EL) elements that utilize

[0004] the (Electroluminescence) phenomenon have characteristics such as being easily thinned and lightened, being capable of responding quickly to an input signal, and being drivable using a DC low-voltage power supply, and are applied to display devices. For example, in Patent Document 1, a flexible light-emitting device to which an organic EL element is applied is described. is easily thinned and lightened, can respond quickly to an input signal, and can be driven using a DC low-voltage power supply, and is applied to display devices. For example, in Patent Document 1, a flexible light-emitting device to which an organic EL element is applied has characteristics such as being easily thinned and lightened, being capable of responding quickly to an input signal, and being drivable using a DC low-voltage power supply, and is applied to display devices. For example, in Patent Document 1, a flexible light-emitting device to which an organic EL element is applied has characteristics such as being easily thinned and lightened, being capable of responding quickly to an input signal, and being drivable using a DC low-voltage power supply, and is applied to display devices. For example, in Patent Document 1, a flexible light-emitting device to which an organic EL element is applied An apparatus is disclosed.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] One aspect of the present invention is to provide a display device having a light detection function as one of the problems. One aspect of the present invention is to provide a highly convenient display device as one of the problems. One aspect of the present invention is to provide a multifunctional display device as one of the problems. One aspect of the present invention is to provide a novel display device as one of the problems.

[0007] Note that the description of these problems does not prevent the existence of other problems. One aspect of the present invention does not necessarily have to solve all of these problems. It is possible to extract other problems from the description of the specification, drawings, and claims .

Means for Solving the Problems

[0008] One aspect of the present invention is a display device having a light receiving element and a first light emitting element in a display unit. The light receiving element has a first pixel electrode, an active layer, and a common electrode. The first light emitting element has a second pixel electrode, a light emitting layer, and a common electrode. The active layer is located on the first pixel electrode. The active layer has a first organic compound. The light emitting layer is located on the second pixel electrode. The light emitting layer has a second organic compound different from the first organic compound. The common electrode is connected to the active layer It has a portion overlapping with the first pixel electrode and a portion overlapping with the second pixel electrode via the light-emitting layer. It does.

[0009] One aspect of the present invention is a display device having a light-receiving element and a first light-emitting element in a display unit. The light-receiving element has a first pixel electrode, a common layer, an active layer, and a common electrode. The first light-emitting element has a second pixel electrode, a common layer, a light-emitting layer, and a common electrode. The active layer is located on the first pixel electrode. The active layer has a first organic compound. The light-emitting layer is located on the second pixel electrode. The light-emitting layer has a second organic compound different from the first organic compound. The common layer is located on the first pixel electrode and the second pixel electrode. The common layer has a portion overlapping with the active layer and a portion overlapping with the light-emitting layer. The common electrode has a portion overlapping with the first pixel electrode through the common layer and the active layer, and a portion overlapping with the second pixel electrode through the common layer and the light-emitting layer. It does.

[0010] One aspect of the present invention is a display device having a light-receiving element, a first light-emitting element, and a second light-emitting element in a display unit. The light-receiving element has a first pixel electrode, a common layer, an active layer, and a common electrode. The first light-emitting element has a second pixel electrode, a common layer, a first light-emitting layer, and a common electrode. The second light-emitting element has a third pixel electrode, a common layer, a second light-emitting layer, and a common electrode. The active layer is located on the first pixel electrode. The active layer has a first organic compound. The first light-emitting layer is located on the second pixel electrode. The first light-emitting layer has a second organic compound different from the first organic compound. The second light-emitting layer is located on the third pixel electrode. The second light-emitting layer has a third organic compound different from the first organic compound and the second organic compound. The common The layer is located on the first pixel electrode, on the second pixel electrode, and on the third pixel electrode. Common layer has a portion overlapping with the active layer, a portion overlapping with the first light-emitting layer, and a portion overlapping with the second light-emitting layer . The common electrode has a portion overlapping with the first pixel electrode through the common layer and the active layer, and a common portion overlapping with the second pixel electrode through the common layer and the first light-emitting layer, and the common layer and the second light-emitting layer and has a portion overlapping with the third pixel electrode through the same.

[0011] The display unit preferably further has a lens. The lens preferably has a portion overlapping with the light-receiving element . The light transmitted through the lens is incident on the light-receiving element.

[0012] The display unit preferably further has a partition wall. The partition wall preferably covers the ends of the first pixel electrode and the second pixel electrode. The partition wall preferably has a function of electrically insulating the first pixel electrode and the second pixel electrode . The partition wall preferably has a function of absorbing at least a part of the light emitted by the first light-emitting element.

[0013] The display unit preferably further has a colored layer. The colored layer preferably has a portion in contact with the upper surface of the first pixel electrode and a portion in contact with the side surface of the partition wall.

[0014] Alternatively, the display unit preferably further has an insulating layer and a colored layer.

[0015] The colored layer, the first pixel electrode, and the second pixel electrode preferably each have a portion in contact with the upper surface of the insulating layer . At this time, the partition wall preferably covers the upper surface and the side surface of the colored layer.

[0016] Alternatively, the partition wall, the first pixel electrode, and the second pixel electrode preferably each have a portion that contacts the upper surface of the insulating layer. At this time, the partition wall preferably has an opening that reaches the insulating layer. Preferably, the colored layer has a portion that contacts the insulating layer through the opening and a portion that contacts the upper surface of the partition wall.

[0017] The colored layer preferably has a color filter or a black matrix.

[0018] The display unit preferably further has a light shielding layer. The end of the light shielding layer preferably overlaps with the end of the lens. The light shielding layer preferably overlaps with the partition wall.

[0019] The display unit preferably has flexibility.

[0020] One aspect of the present invention has a display device having any of the above configurations, and is a module to which a flexible printed circuit board (hereinafter referred to as FPC) or a connector such as TCP (Tape Carrier Package) is attached, or a module in which an integrated circuit (IC) is mounted by a COG (Chip On Glass) method or a COF (Chip On Film) method or the like.

[0021] One aspect of the present invention is an electronic device having the above module and at least one of an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operation button.

Advantages of the Invention

[0022] According to one aspect of the present invention, a display device having a light detection function can be provided. According to one aspect of the present invention, Thus, a display device with high convenience can be provided. According to one aspect of the present invention, a multi-functional display device can be provided. According to one aspect of the present invention, a novel display device can be provided.

[0023] Note that the description of these effects does not prevent the existence of other effects. One aspect of the present invention does not necessarily have to have all of these effects. It is possible to extract other effects from the descriptions in the specification, drawings, and claims. From the descriptions in the specification, drawings, and claims, it is possible to extract other effects.

Brief Description of the Drawings

[0024]

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MODE FOR CARRYING OUT THE INVENTION

[0025] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be easily understood by those skilled in the art that the forms and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention is the following embodiments without being limited thereto, and various changes can be made to the forms and details thereof without departing from the spirit and scope of the present invention. It is easily understood by those skilled in the art. Therefore, the present invention is the following embodiments without being limited thereto, and various changes can be made to the forms and details thereof without departing from the spirit and scope of the present invention. It is easily understood by those skilled in the art. Therefore, the present invention is the following embodiments It should not be construed as being limited to the contents described.

[0026] In the configuration of the invention described below, the same parts or parts having similar functions are referred to as the same parts. The same reference numerals are used in common among different drawings, and the repeated explanations are omitted. When referring to a function, the same hatch pattern may be used and no particular reference number may be given.

[0027] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as in the actual embodiment, in order to facilitate understanding. Therefore, the disclosed invention may not necessarily represent the position, size, range, etc. Furthermore, the present invention is not limited to the position, size, range, etc. disclosed in the drawings.

[0028] The words "film" and "layer" may be interchangeable depending on the circumstances. For example, the term "conductive layer" can be replaced with "conductive film" Alternatively, for example, the term "insulating film" can be changed to " The term "insulating layer" may be changed to "insulating layer."

[0029] (Embodiment 1) In this embodiment, a display device according to one embodiment of the present invention will be described with reference to FIGS.

[0030] The display device of this embodiment has a light receiving element and a light emitting element in a display portion. The display unit has light-emitting elements arranged in a matrix, and an image can be displayed on the display unit. In addition, the display unit has light receiving elements arranged in a matrix, and the display unit is It also functions as a light receiving section. The light receiving section can be used in image sensors and touch sensors. In other words, by detecting light with the light receiving section, it is possible to capture an image or to detect an object (such as a finger or pen). It is possible to detect the proximity or contact of (such as).

[0031] In the display device of the present embodiment, when the object reflects the light emitted by the light-emitting element included in the display unit, the light-receiving element can detect the reflected light. Therefore, even in a dark place, imaging and touch (including near-touch ) detection are possible.

[0032] The display device of the present embodiment has a function of displaying an image using a light-emitting element. That is, the light-emitting element functions as a display element.

[0033] As the light-emitting element, it is preferable to use an EL element such as an OLED (Organic Light Emitting Dio de) or a QLED (Quantum-dot Light Emitting Diod e). As the light-emitting substance included in the EL element, a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescent material), an inorganic compound (quantum dot material etc.), a substance that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence (Thermally ac tivated delayed fluorescence: TADF) material), etc. can be mentioned. In addition, as the light-emitting element, an LED such as a micro LED (Light Emitting Diode) can also be used.

[0034] The display device of the present embodiment has a function of detecting light using a light-receiving element.

[0035] When the light-receiving element is used as an image sensor, the display device of the present embodiment can capture an image using the light-receiving element.

[0036] For example, using an image sensor to acquire data such as fingerprints, palm prints, or irises This is possible. That is, it is possible to incorporate a biometric sensor into the display device of the present embodiment. By incorporating a biometric sensor into the display device, the number of components of the electronic device can be reduced compared to the case where a biometric sensor is provided separately from the display device, and the electronic device can be miniaturized and lightened.

[0037] In addition, using an image sensor, it is possible to acquire data such as the user's facial expression, eye movement, or change in pupil diameter. By analyzing the data, it is possible to acquire information about the user's physical and mental state. By changing the output content of one or both of the display and sound based on the information, for example, in a device for VR (Virtual Reality), AR (Augmented Reality), or MR (Mixed Reality), it is possible to ensure that the user can use the device safely. gmented Reality), or a device for MR (Mixed Reality )

[0038] When the light receiving element is used as a touch sensor, the display device of the present embodiment can detect the proximity or contact of an object using the light receiving element.

[0039] As the light receiving element, for example, a pn-type or pin-type photodiode can be used. The light receiving element functions as a photoelectric conversion element that detects light incident on the light receiving element and generates electric charges. The amount of generated electric charges is determined based on the amount of incident light.

[0040] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light receiving element. The organic photodiode is easy to thin, lighten, and increase in area, and has a high degree of freedom in shape and design, so it can be applied to various display devices.

[0041] In one aspect of the present invention, an organic EL element is used as a light-emitting element, and an organic photodiode is used as a light-receiving element. The organic photodiode has many layers that can have the same configuration as the organic EL element. Therefore, a light-receiving element can be incorporated into the display device without significantly increasing the manufacturing process. For example, the active layer of the light-receiving element and the light-emitting layer of the light-emitting element can be made separately, and the other layers can have the same configuration for both the light-emitting element and the light-receiving element. Note that the layers commonly shared by the light-receiving element and the light-emitting element may have different functions in the light-emitting element and the light-receiving element. In this specification, components are named based on their functions in the light-emitting element. For example, the hole injection layer functions as a hole injection layer in the light-emitting element and as a hole transport layer in the light-receiving element. Similarly, the electron injection layer functions as an electron injection layer in the light-emitting element and as an electron transport layer in the light-receiving element.

[0042] Figures 1A to 1D show cross-sectional views of a display device according to one aspect of the present invention.

[0043] The display device 50A shown in Figure 1A has a layer 53 having a light-receiving element and a layer 57 having a light-emitting element between a substrate 51 and a substrate 59.

[0044] The display device 50B shown in Figure 1B has a layer 53 having a light-receiving element, a layer 55 having a transistor, and a layer 57 having a light-emitting element between a substrate 51 and a substrate 59.

[0045] The display devices 50A and 50B are configured such that light of red (R), green (G), and blue (B) is emitted from the layer 57 having the light-emitting element.

[0046] The display device according to one aspect of the present invention has a plurality of pixels arranged in a matrix. One pixel has one or more sub-pixels. One sub-pixel has one light-emitting element. For example, a pixel may have a configuration with three sub-pixels (three colors of R, G, B, or three colors of yellow (Y), cyan ( C), and magenta (M), etc.), or a configuration with four sub-pixels (four colors of R, G, B , white (W), or four colors of R, G, B, Y, etc.). Furthermore, a pixel has a light-receiving element. The light-receiving element may be provided in all pixels, or may be provided in some pixels. Also, one pixel may have a plurality of light-receiving elements.

[0047] The layer 55 having transistors preferably has a first transistor and a second transistor. The first transistor is electrically connected to the light-receiving element. The second transistor is electrically connected to the light-emitting element.

[0048] The display device according to one aspect of the present invention may have a function of detecting an object such as a finger in contact with the display device. For example, as shown in FIG. 1C, in the layer 57 having the light-emitting element, the light emitted by the light-emitting element is reflected by the finger 52 in contact with the display device 50B, and the light-receiving element in the layer 53 having the light-receiving element detects the reflected light. Thereby, it can be detected that the finger 52 is in contact with the display device 50B.

[0049] The display device according to one aspect of the present invention may have a function of detecting or imaging an object proximate to (not in contact with) the display device 50B, as shown in FIG. 1D.

[0050] FIGS. 1E to 1H show an example of a pixel.

[0051] The pixels shown in FIGS. 1E and 1F have three sub-pixels (three light-emitting elements) of R, G, and B, and a light-receiving element PD. FIG. 1E shows an example in which three sub-pixels and the light-receiving element PD are arranged in a 2×2 matrix, and FIG. 1F shows an example in which three sub-pixels and the light-receiving element PD are arranged in a single horizontal row.

[0052] The pixel shown in FIG. 1G has four sub-pixels (four light-emitting elements) of R, G, B, and W, and a light-receiving element P D.

[0053] The pixel shown in FIG. 1H has three sub-pixels of R, G, and B, a light-emitting element IR that emits infrared light, and a light-receiving element PD. At this time, it is preferable that the light-receiving element PD has a function of detecting infrared light. The light-receiving element PD may have a function of detecting both visible light and infrared light. The wavelength of the light detected by the light-receiving element PD can be determined according to the use of the sensor.

[0054] Hereinafter, with reference to FIGS. 2 to 5, the detailed configuration of a display device according to an aspect of the present invention will be described.

[0055] [Display device 10A] FIG. 2A shows a cross-sectional view of the display device 10A.

[0056] The display device 10A has a light-receiving element 110 and a light-emitting element 190.

[0057] The light-receiving element 110 has a pixel electrode 111, a common layer 112, an active layer 113, a common layer 114, and a common electrode 115.

[0058] The light-emitting element 190 has a pixel electrode 191, a common layer 112, a light-emitting layer 193, a common layer 114, and a common electrode 115.

[0059] The pixel electrode 111, the pixel electrode 191, the common layer 112, the active layer 113, the light-emitting layer 193, and the common layer 114, and the common electrode 115 may each have a single-layer structure or a laminated structure as well.

[0060] The pixel electrode 111 and the pixel electrode 191 are located on the insulating layer 214. The pixel electrode 111 and the pixel electrode 191 can be formed of the same material and in the same process.

[0061] The common layer 112 is located on the pixel electrode 111 and on the pixel electrode 191. The common layer 112 is a layer commonly used for the light-receiving element 110 and the light-emitting element 190.

[0062] The active layer 113 overlaps with the pixel electrode 111 via the common layer 112. The light-emitting layer 193 overlaps with the pixel electrode 191 via the common layer 112. The active layer 113 contains a first organic compound, and the light-emitting layer 193 contains a second organic compound different from the first organic compound.

[0063] The common layer 114 is located on the common layer 112, on the active layer 113, and on the light-emitting layer 193. The common layer 114 is a layer commonly used for the light-receiving element 110 and the light-emitting element 190.

[0064] The common electrode 115 has a portion overlapping with the pixel electrode 111 via the common layer 112, the active layer 113, and the common layer 114. Also, the common electrode 115 has a portion overlapping with the pixel electrode 191 via the common layer 112, the light-emitting layer 193, and the common layer 114. The common electrode 115 is a layer commonly used for the light-receiving element 110 and the light-emitting element 190.

[0065] In the display device of the present embodiment, an organic compound is used for the active layer 113 of the light-receiving The optical element 110 has layers other than the active layer 113 in common with the light emitting element 190 (EL element). Therefore, the process of forming the active layer 113 can be omitted in the process of manufacturing the light emitting device 190. By simply adding a step, the light receiving element 110 can be formed in parallel with the formation of the light emitting element 190. In addition, the light emitting element 190 and the light receiving element 110 can be formed on the same substrate. Therefore, the light receiving element 110 can be built into the display device without significantly increasing the number of manufacturing steps. It is possible.

[0066] In the display device 10A, the active layer 113 of the light receiving element 110 and the light emitting layer 193 of the light emitting element 190 1. The light receiving element 110 and the light emitting element 190 have the same configuration except that they are made differently. However, the configuration of the light receiving element 110 and the light emitting element 190 is not limited to this. In addition to the active layer 113 and the light-emitting layer 193, the light-emitting element 190 also has layers that are made separately. (See display devices 10K, 10L, and 10M described later.) It is preferable that the optical element 190 has one or more layers that are used in common (common layers). This makes it possible to incorporate the light receiving element 110 into the display device without significantly increasing the number of manufacturing steps. can.

[0067] The display device 10A has a pair of substrates (substrate 151 and substrate 152) between which a light receiving element 110 and a light emitting element 111 are disposed. It includes a photoelement 190, a transistor 41, and a transistor 42, etc.

[0068] In the light receiving element 110, a common electrode 115 is disposed between the pixel electrode 111 and the common electrode 115. The communication layer 112, the active layer 113, and the common layer 114 are called organic layers (layers containing an organic compound). It is preferable that the pixel electrode 111 has a function of reflecting visible light. The end of the electrode 111 is covered by the partition wall 216. The common electrode 115 transmits visible light. It has a function.

[0069] The light receiving element 110 has a function of detecting light. Specifically, the light receiving element 110 is a photoelectric conversion element that receives the light 22 incident from the outside of the display device 10A and converts it into an electrical signal. The light 22 can also be the light reflected by the object from the light emitted by the light emitting element 190. Further, the light 22 may be incident on the light receiving element 110 through a lens described later. In the present embodiment, the pixel electrode 111 functions as an anode and the common electrode 115 functions as a cathode in alignment with the light emitting element 190. That is, the light receiving element 110 can detect the light incident on the light receiving element 110 and generate charges by applying a reverse bias between the pixel electrode 111 and the common electrode 115 and driving it.

[0070] A light shielding layer BM is provided on the surface of the substrate 152 on the substrate 151 side. The light shielding layer BM has openings at positions overlapping the light receiving element 110 and at positions overlapping the light emitting element 190. By providing the light shielding layer BM, the range in which the light receiving element 110 detects light can be controlled.

[0071] As the light shielding layer BM, a material that blocks the light emitted from the light emitting element can be used. The light shielding layer BM preferably absorbs visible light. As the light shielding layer BM, for example, a black matrix can be formed using a metal material, or a resin material containing a pigment (such as carbon black) or a dye. The light shielding layer BM may have a laminated structure of a red color filter, a green color filter, and a blue color filter.

[0072] ​​​​​​​​​​​​Here, the light receiving element 110 detects the light reflected by the object from the light emission of the light emitting element 190. However, the light emitted from the light emitting element 190 may be reflected within the display device 10A and incident on the light receiving element 110 without passing through the object. The light shielding layer BM can suppress the influence of such stray light. For example, when the light shielding layer BM is not provided, the light 23a emitted from the light emitting element 190 may be reflected by the substrate 152, and the reflected light 23b may be incident on the light receiving element 110. By providing the light shielding layer BM, the incidence of the reflected light 23b on the light receiving element 110 can be suppressed. Thereby, noise can be reduced and the sensitivity of the sensor using the light receiving element 110 can be increased.

[0073] In the light emitting element 190, the common layer 112, the light emitting layer 193, and the common layer 114 located between the pixel electrode 191 and the common electrode 115, respectively, can also be referred to as an EL layer. The pixel electrode 191 preferably has a function of reflecting visible light. The end portion of the pixel electrode 191 is covered by the partition wall 216. The pixel electrode 111 and the pixel electrode 191 are electrically insulated from each other by the partition wall 216. The common electrode 115 has a function of transmitting visible light.

[0074] The light emitting element 190 has a function of emitting visible light. Specifically, the light emitting element 190 is an electroluminescent element that emits light toward the substrate 152 side by applying a voltage between the pixel electrode 191 and the common electrode 115 (see light emission 21).

[0075] The light emitting layer 193 is preferably formed so as not to overlap with the light receiving region of the light receiving element 110. Thereby, absorption of the light 22 by the light emitting layer 193 can be suppressed, and the amount of light irradiated onto the light receiving element 110 can be increased. ​​​

[0076] The pixel electrode 111 is electrically connected to the source or drain of the transistor 41 through an opening provided in the insulating layer 214. The end of the pixel electrode 111 is covered by the partition wall 216. The pixel electrode 191 is electrically connected to the source or drain of the transistor 42 through an opening provided in the insulating layer 214. The end of the pixel electrode 191 is covered by the partition wall 216. The transistor 42 has a function of controlling the driving of the light-emitting element 190.

[0077] The pixel electrode 191 is electrically connected to the source or drain of the transistor 42 through an opening provided in the insulating layer 214. The end of the pixel electrode 191 is covered by the partition wall 216. The transistor 42 has a function of controlling the driving of the light-emitting element 190.

[0078] The transistor 41 and the transistor 42 are in contact with each other on the same layer (substrate 151 in FIG. 2A).

[0079] At least a part of the circuit electrically connected to the light-receiving element 110 is preferably formed of the same material and in the same process as the circuit electrically connected to the light-emitting element 190. Thereby, compared with the case where the two circuits are formed separately, the thickness of the display device can be reduced, and the manufacturing process can be simplified.

[0080] The light-receiving element 110 and the light-emitting element 190 are preferably each covered by a protective layer 195. In FIG. 2A, the protective layer 195 is provided in contact with the common electrode 115. By providing the protective layer 195, it is possible to suppress impurities such as water from entering the light-receiving element 110 and the light-emitting element 190, and improve the reliability of the light-receiving element 110 and the light-emitting element 190. Also, the protective layer 195 and the substrate 152 are bonded together by an adhesive layer 142.

[0081] ​​​​​​​​​Note that, as shown in FIG. 3A, it is not necessary to have a protective layer on the light receiving element 110 and the light emitting element 190. In FIG. 3A, the common electrode 115 and the substrate 152 are bonded together by the adhesive layer 142. Note that, as shown in FIG. 3A, it is not necessary to have a protective layer on the light receiving element 110 and the light emitting element 190. In FIG. 3A, the common electrode 115 and the substrate 152 are bonded together by the adhesive layer 142. together.

[0082] [Display device 10B] FIG. 2B shows a cross-sectional view of the display device 10B. In the following description of the display device, the description of the same configuration as the previously described display device may be omitted. together.

[0083] The display device 10B shown in FIG. 2B has a lens 149 in addition to the configuration of the display device 10A.

[0084] The display device of the present embodiment may have a lens 149. The lens 149 is provided at a position overlapping the light receiving element 110. In the display device 10B, the lens 149 is provided in contact with the substrate 152. The lens 149 included in the display device 10B has a convex surface on the substrate 151 side. Alternatively, the lens 149 may have a convex surface on the substrate 152 side. together. 2 is provided in contact. The lens 149 included in the display device 10B has a convex surface on the substrate 151 side. Alternatively, the lens 149 may have a convex surface on the substrate 152 side. together.

[0085] When forming both the light shielding layer BM and the lens 149 on the same surface of the substrate 152, the formation order does not matter. FIG. 2B shows an example in which the lens 149 is formed first, but the light shielding layer BM may be formed first. In FIG. 2B, the end portion of the lens 149 is covered by the light shielding layer BM. together. together.

[0086] The display device 10B is configured such that the light 22 is incident on the light receiving element 110 through the lens 149. When having the lens 149, the imaging range of the light receiving element 110 can be made narrower compared to the case without the lens 149, and it is possible to suppress the imaging ranges of adjacent light receiving elements 110 from overlapping. As a result, a clear image with less blurring can be captured. Also, of the light receiving element 110 together. together. together. When the imaging range is the same, having the lens 149 can increase the size of the pinhole (corresponding to the size of the opening of the BM overlapping with the light receiving element 110 in FIG. 2B) compared to not having the lens 149. Therefore, by having the lens 149, the amount of light incident on the light receiving element 110 can be increased. ) can be increased. 0 can be increased.

[0087] The display devices shown in FIGS. 3B and 3C also have a configuration in which light 22 is incident on the light receiving element 110 through the lens 149, similar to the display device 10B shown in FIG. 2B. is incident on the light receiving element 110 through the lens 149.

[0088] In FIG. 3B, the lens 149 is provided in contact with the upper surface of the protective layer 195. The lens 149 included in the display device shown in FIG. 3B has a convex surface on the substrate 152 side. has a convex surface on the substrate 152 side.

[0089] In the display device shown in FIG. 3C, a lens array 146 is provided on the display surface side of the substrate 152. The lenses included in the lens array 146 are provided at positions overlapping with the light receiving element 110. It is preferable that a light shielding layer BM is provided on the surface of the substrate 152 on the substrate 151 side. are provided at positions overlapping with the light receiving element 110. It is preferable that a light shielding layer BM is provided on the surface of the substrate 152 on the substrate 151 side. is provided on the surface of the substrate 152 on the substrate 151 side.

[0090] As a method for forming the lens used in the display device of the present embodiment, a lens such as a microlens may be directly formed on the substrate or on the light receiving element, or a lens array such as a separately manufactured microlens array may be bonded to the substrate. As a method for forming the lens used in the display device of the present embodiment, a lens such as a microlens may be directly formed on the substrate or on the light receiving element, or a lens array such as a separately manufactured microlens array may be bonded to the substrate. may be bonded to the substrate.

[0091] [Display device 10C] FIG. 2C shows a cross-sectional view of the display device 10C.

[0092] The display device 10C shown in FIG. 2C does not have the substrate 151, the substrate 152, and the partition wall 216, and the base It is different from the display device 10A in that it has a plate 153, a substrate 154, an adhesive layer 155, an insulating layer 212, and a partition wall 217. It is different from the

[0093] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The substrate 154 and the protective layer 195 are bonded together by an adhesive layer 142.

[0094] The display device 10C is configured to be manufactured by transferring an insulating layer 212, transistors 41, transistors 42, a light receiving element 110, a light emitting element 190, etc., formed on a manufacturing substrate, onto the substrate 153. The substrate 153 and the substrate 154 preferably each have flexibility. This can enhance the flexibility of the display device 10C. For example, it is preferable to use resin for the substrate 15 3 and the substrate 154 respectively. As the substrate 153 and the substrate 154, polyester resins such as polyethylene terephthalate (PET)

[0095] , polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene (PP) resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. can be used. Glass with a thickness sufficient to have flexibility may be used for one or both of the substrate 153 and the substrate 154. As the substrate 153 and the substrate 154, polyester resins such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene (PP) resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. can be used. Glass with a thickness sufficient to have flexibility may be used for one or both of the substrate 153 and the substrate 154.

[0096] For the substrate included in the display device according to the present embodiment, a film with high optical isotropy may be used. Examples of the film with high optical isotropy include triacetyl cellulose (TAC, also referred to as cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic film.

[0097] The partition wall 217 preferably absorbs the light emitted by the light-emitting element. As the partition wall 217, for example, a black matrix can be formed using a resin material containing a pigment or a dye. Also, by using a brown resist material, the partition wall 217 can be formed of a colored insulating layer.

[0098] The light 23c emitted by the light-emitting element 190 may be reflected by the substrate 154 and the partition wall 217, and the reflected light 23d may enter the light-receiving element 110. Also, the light 23c may pass through the partition wall 217 and be reflected by a transistor or wiring, etc., and the reflected light may enter the light-receiving element 110. By absorbing the light 23c by the partition wall 217, the entry of the reflected light 23d into the light-receiving element 110 can be suppressed. Thereby, noise can be reduced and the sensitivity of the sensor using the light-receiving element 110 can be increased.

[0099] The partition wall 217 preferably absorbs at least the wavelength of the light detected by the light-receiving element 110. For example, when the light-receiving element 110 detects the green light emitted by the light-emitting element 190, the partition wall 217 preferably absorbs at least the green light. For example, if the partition wall 217 has a red color filter, it can absorb the green light 23c and suppress the entry of the reflected light 23d into the light-receiving element 110. ​​​​​​​​​​​​

[0100] [Indicating device 10D] Fig. 4A shows a cross-sectional view of the indicating device 10D.

[0101] The indicating device 10D has a colored layer 148a in addition to the configuration of the indicating device 10B.

[0102] The colored layer 148a has a portion in contact with the upper surface of the pixel electrode 111 of the light receiving element 110 and a portion in contact with the side surface of the partition wall 216.

[0103] The colored layer 148a preferably absorbs the light emitted by the light emitting element. As the colored layer 148a, for example, a black matrix can be formed using a resin material containing a pigment or a dye. Also, by using a brown resist material, the colored layer 14 8a can be configured with a colored insulating layer.

[0104] The colored layer 148a preferably absorbs at least the wavelength of the light detected by the light receiving element 110. For example, when the light receiving element 110 detects the green light emitted by the light emitting element 190, the colored layer 148a preferably absorbs at least the green light. For example, if the colored layer 148 a has a red color filter, it can absorb the green light and suppress the reflected light from entering the light receiving element 110. By the colored layer 148a absorbing the stray light generated in the indicating device 10D, the amount of stray light incident on the light receiving element 110 can be reduced. Thereby, noise can be reduced and the sensitivity of the sensor using the light receiving element 110 can be increased.

[0105] In the indicating device of the present embodiment, the colored layer is provided between the light receiving element 110 and the light emitting element 190.

[0106] In the indicating device of the present embodiment, the colored layer is provided between the light receiving element 110 and the light emitting element 190. ​​It is configured. Thereby, stray light incident from the light-emitting element 190 to the light-receiving element 110 can be suppressed. It can be done.

[0107] [Display device 10E] Fig. 4B shows a cross-sectional view of the display device 10E.

[0108] In addition to the configuration of the display device 10D, the display device 10E has a colored layer 148b. The material that can be used for the colored layer 148b is the same as that of the colored layer 148a. 8b is the same as the colored layer 148a.

[0109] The colored layer 148b has a portion in contact with the upper surface of the pixel electrode 191 included in the light-emitting element 190 and a portion in contact with the side surface of the partition wall 216. 216 has a portion in contact with the side surface of the partition wall 216.

[0110] The display device of the present embodiment preferably has one or both of the colored layer 148a and the colored layer 148b. It is preferable to have it.

[0111] By having both the colored layer 148a and the colored layer 148b, the amount of stray light incident on the light-receiving element 110 can be further reduced. The amount of stray light can be further reduced.

[0112] In the display device 10E, since the colored layer 148b is in contact with the upper surface of the pixel electrode 191, the amount of light extracted to the outside of the display device 10E among the light emissions 21 of the light-emitting element 190 may be less than that of the display device 10D (Fig. 4A). Therefore, when only one of the colored layer 148a and the colored layer 148b is provided, it is preferable to provide only the colored layer 148a on the light-receiving element 110 side as in the display device 10D. Thereby, the light extraction efficiency of the light-emitting element 190 can be increased, and the incidence of stray light on the light-receiving element 110 can be suppressed. And a highly sensitive sensor can be incorporated in a display device with high display quality. 110 can be suppressed. And a highly sensitive sensor can be incorporated in a display device with high display quality. 10D (Fig. 4A). Therefore, when only one of the colored layer 148a and the colored layer 148b is provided, it is preferable to provide only the colored layer 148a on the light-receiving element 110 side as in the display device 10D. 10D, it is preferable to provide only the colored layer 148a on the light-receiving element 110 side. 10D, it is preferable to provide only the colored layer 148a on the light-receiving element 110 side. Thereby, the light extraction efficiency of the light-emitting element 190 can be increased, and the incidence of stray light on the light-receiving element 110 can be suppressed. 190 can be increased, and the incidence of stray light on the light-receiving element 110 can be suppressed. And a highly sensitive sensor can be incorporated in a display device with high display quality. A highly sensitive sensor can be incorporated in a display device with high display quality.

[0113] [Display device 10F] Fig. 4C shows a cross-sectional view of the display device 10F.

[0114] In addition to the configuration of the display device 10B, the display device 10F has a colored layer 148. The colored layer 148 The material that can be used for it is the same as that of the colored layer 148a.

[0115] The colored layer 148 is provided so as to cover the upper surface and the side surface of the partition wall 216. The colored layer 148 has a portion that contacts the upper surface of the pixel electrode 111 included in the light receiving element 110 and a portion that contacts the upper surface of the pixel electrode 191 included in the light emitting element 190.

[0116] The colored layer 148a and the colored layer 148b shown in Fig. 4B may not be separated from each other, and may be a single film like the colored layer 148 shown in Fig. 4C. By absorbing stray light generated within the display device 10F, the amount of stray light incident on the light receiving element 110 can be reduced . As a result, noise can be reduced and the sensitivity of the sensor using the light receiving element 110 can be increased.

[0117] [Display device 10G] Fig. 5A shows a cross-sectional view of the display device 10G.

[0118] In addition to the configuration of the display device 10B, the display device 10G has a colored layer 147.

[0119] The colored layer 147 is located on the insulating layer 214, and the partition wall 216 is provided so as to cover the upper surface and the side surface of the colored layer 147. The colored layer 147 and the light receiving element 110 are electrically insulated by the partition wall 216. Similarly, the colored layer 147 and the light emitting element 190 are electrically insulated by the partition wall 216.

[0120] The materials that can be used for the colored layer 147 are the same as those for the colored layer 148a. The above-mentioned colored layer 147, similar to the colored layers 148, 148a, and 148b, can absorb stray light generated within the display device 10G to reduce the amount of stray light incident on the light-receiving element 110. As a result, noise can be reduced, and the sensitivity of the sensor using the light-receiving element 110 can be enhanced.

[0121] Since the above-mentioned colored layers 148, 148a, and 148b are configured to absorb light, depending on the material used, the resistivity may be lower than that of the partition wall 216. For example, a resin containing a pigment such as carbon black has a lower resistivity than a resin without the pigment. Therefore, depending on the material, providing any of the colored layers 148, 148a, or 148b may cause current leakage to an adjacent light-emitting element or light-receiving element. For example, current leakage to an adjacent light-emitting element may cause a problem that a light-emitting element other than the desired one emits light (also referred to as cross talk).

[0122] On the other hand, the colored layer 147 is provided separately from the light-receiving element 110 and the light-emitting element 190, respectively. Also, the colored layer 147 is electrically insulated from the light-receiving element 110 and the light-emitting element 190, respectively, by the partition wall 21 6. Therefore, even if the colored layer 147 is a layer with a low resistivity, it is less likely to affect the light-receiving element 110 and the light-emitting element 190. Therefore, it is preferable that the range of material selection for the colored layer 147 is widened. For example, as the colored layer 147, a black matrix may be formed using a metal material or the like.

[0123] [Display device 10H] FIG. 5B shows a cross-sectional view of the display device 10H.

[0124] ​​​​ The display device 10H has a colored layer 148c in addition to the configuration of the display device 10B.

[0125] In the display device 10H, the partition wall 216 has an opening reaching the insulating layer 214. The colored layer 148 c has a portion in contact with the insulating layer 214 through the opening, a portion in contact with the side surface of the partition wall 216 inside the opening, and a portion in contact with the upper surface of the partition wall 216. The colored layer 148c and the light receiving element 110 are electrically insulated by the partition wall 216. Similarly, the colored layer 148c and the light emitting element 190 are electrically insulated by the partition wall 216.

[0126] The material that can be used for the colored layer 148c is the same as that of the colored layer 147. By the colored layer 148 c absorbing stray light generated in the display device 10H, the amount of stray light incident on the light receiving element 110 can be reduced. Thereby, noise can be reduced and the sensitivity of the sensor using the light receiving element 110 can be increased.

[0127] The colored layer 148c is provided separately from the light receiving element 110 and the light emitting element 190, respectively. Also, the colored layer 148c is electrically insulated from each of the light receiving element 110 and the light emitting element 190 by the partition wall 216. Therefore, even if the colored layer 148c is a layer with a low resistivity, it is difficult to affect the light receiving element 110 and the light emitting element 190. Therefore, it is preferable that the range of selection of the material used for the colored layer 148 c is widened.

[0128] [Display device 10J]

[0129] FIG. 5C shows a cross-sectional view of the display device 10J.

[0130] The display device 10J has a colored layer 148c in addition to the configuration of the display device 10D. ​​As shown in FIGS. 4A to 4C and FIGS. 5A to 5C, the display device according to one aspect of the present invention preferably has one or more of colored layers 148, 148a, 148b, 148c, 147. Thereby, stray light generated in the display device can be absorbed, and the amount of stray light incident on the light receiving element 110 can be reduced. Therefore, noise can be reduced and the sensitivity of the sensor using the light receiving element 110 can be increased.

[0131] [Display devices 10K, 10L, 10M] FIG. 6A shows a cross-sectional view of the display device 10K, FIG. 6B shows a cross-sectional view of the display device 10L, and FIG. 6 C shows a cross-sectional view of the display device 10M.

[0132] The display device 10K is different from the display device 10A in that it does not have the common layer 114 and has the buffer layers 184 and 194. The buffer layers 184 and 194 may each have a single-layer structure or a laminated structure.

[0133] In the display device 10K, the light receiving element 110 has a pixel electrode 111, a common layer 112, an active layer 1 13, a buffer layer 184, and a common electrode 115. Also, in the display device 10K , the light emitting element 190 has a pixel electrode 191, a common layer 112, a light emitting layer 193, a buffer layer 194 , and a common electrode 115.

[0134] The display device 10L is different from the display device 10A in that it does not have the common layer 112 and has the buffer layers 182 and 192. The buffer layers 182 and 192 may each have a single-layer structure or a laminated structure.

[0135] In the display device 10L, the light receiving element 110 has a pixel electrode 111, a buffer layer 182, an active It has layer 113, common layer 114, and common electrode 115. Also, in display device 10L , the light-emitting element 190 has a pixel electrode 191, a buffer layer 192, a light-emitting layer 193, common layer 114 , and common electrode 115.

[0136] Display device 10M does not have common layer 112 and common layer 114, and is different from display device 10A in that it has buffer layer 182, buffer layer 184, buffer layer 192, and buffer layer 194.

[0137] In display device 10M, the light-receiving element 110 has a pixel electrode 111, a buffer layer 182, an active layer 113, a buffer layer 184, and a common electrode 115. Also, in display device 10M the light-emitting element 190 has a pixel electrode 191, a buffer layer 192, a light-emitting layer 193, a buffer layer 194, and a common electrode 115.

[0138] In the fabrication of the light-receiving element 110 and the light-emitting element 190, not only the active layer 113 and the light-emitting layer 193 can be separately fabricated, but also other layers can be separately fabricated.

[0139] In display device 10K, an example is shown in which the buffer layer 184 between the common electrode 115 and the active layer 113 and the buffer layer 194 between the common electrode 115 and the light-emitting layer 193 are separately fabricated. As the buffer layer 184, for example, an electron transport layer can be formed. As the buffer layer 194 , for example, one or both of an electron injection layer and an electron transport layer can be formed.

[0140] In display device 10L, an example is shown in which the buffer layer 182 between the pixel electrode 111 and the active layer 113 and the buffer layer 192 between the pixel electrode 191 and the light-emitting layer 193 are separately fabricated. As the buffer ​​As the layer 182, for example, a hole transport layer can be formed. As the buffer layer 192, for example, one or both of a hole injection layer and a hole transport layer can be formed.

[0141] In the display device 10M, an example is shown in which the light receiving element 110 and the light emitting element 190 do not have a common layer between a pair of electrodes (the pixel electrode 11 1 or the pixel electrode 191 and the common electrode 115). The light receiving element 110 and the light emitting element 190 included in the display device 10M form the pixel electrode 11 1 and the pixel electrode 191 on the insulating layer 214 with the same material and in the same process, and form the buffer layer 182, the active layer 113, and the buffer layer 184 on the pixel electrode 111, and form the buffer layer 192, the light emitting layer 193, and the buffer layer 194 on the pixel electrode 191. Then, the common electrode 115 is formed so as to cover the pixel electrode 111, the buffer layer 182, the active layer 113, the buffer layer 184, the pixel electrode 191, the buffer layer 192, the light emitting layer 193, and the buffer layer 194, whereby the device can be manufactured. Note that the manufacturing order of the stacked structure of the buffer layer 182, the active layer 113, and the buffer layer 184 and the stacked structure of the buffer layer 192, the light emitting layer 193, and the buffer layer 194 is not particularly limited. For example, after forming the buffer layer 182, the active layer 113, and the buffer layer 184, the buffer layer 192, the light emitting layer 193, and the buffer layer 194 may be manufactured. Conversely, before forming the buffer layer 182, the active layer 113, and the buffer layer 184, the buffer layer 192, the light emitting layer 193, and the buffer layer 194 may be manufactured. Also, the buffer layer 18 2, the buffer layer 192, the active layer 113, the light emitting layer 193, etc. may be alternately formed in this order.

[0142] Hereinafter, with reference to FIGS. 7 to 11, a more detailed configuration of the display device according to one aspect of the present invention will be described. will be described.

[0143] [Display Device 100A] FIG. 7 shows a perspective view of the display device 100A, and FIG. 8 shows a cross-sectional view of the display device 100A.

[0144] The display device 100A has a configuration in which a substrate 152 and a substrate 151 are bonded together. In FIG. 7, the substrate 152 is clearly shown by a broken line.

[0145] The display device 100A includes a display unit 162, a circuit 164, a wiring 165, etc. FIG. 7 shows an example in which an IC (integrated circuit) 173 and an FPC 172 are mounted on the display device 100A. Therefore, the configuration shown in FIG. 7 can also be referred to as a display module having the display device 100A, the IC, and the FPC. module. module.

[0146] As the circuit 164, for example, a scanning line driving circuit can be used.

[0147] The wiring 165 has a function of supplying signals and power to the display unit 162 and the circuit 164. The signals and power are input to the wiring 165 from the outside via the FPC 172 or from the IC 173. input.

[0148] In FIG. 7, an example is shown in which the IC 173 is provided on the substrate 151 by a COG (Chip On Glass) method or a COF (Chip on Film) method or the like. The IC 17 3 can be an IC having, for example, a scanning line driving circuit or a signal line driving circuit. Note that the display device 100A and the display module may have a configuration without providing an IC. Also, the I C may be mounted on the FPC by a COF method or the like.

[0149] FIG. 8 shows a part of the region including the FPC 172, a part of the region including the circuit 164, a part of the region including the display unit 162, and an example of a cross section when a part of the region including the end portion of the display device 100A shown in FIG. 7 is cut, respectively. FIG. 8 shows a part of the region including the FPC 172, a part of the region including the circuit 164, a part of the region including the display unit 162, and an example of a cross section when a part of the region including the end portion of the display device 100A shown in FIG. 7 is cut, respectively. FIG. 8 shows a part of the region including the FPC 172, a part of the region including the circuit 164, a part of the region including the display unit 162, and an example of a cross section when a part of the region including the end portion of the display device 100A shown in FIG. 7 is cut, respectively.

[0150] The display device 100A shown in FIG. 8 has a transistor 201, a transistor 205, a transistor 206, a light emitting element 190, a light receiving element 110, etc. between the substrate 151 and the substrate 152. The display device 100A shown in FIG. 8 has a transistor 201, a transistor 205, a transistor 206, a light emitting element 190, a light receiving element 110, etc. between the substrate 151 and the substrate 152. .

[0151] The substrate 152 and the insulating layer 214 are adhered via an adhesive layer 142. For sealing the light emitting element 190 and the light receiving element 110, a solid sealing structure, a hollow sealing structure, or the like can be applied. In FIG. 8, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 is filled with an inert gas (such as nitrogen or argon), and a hollow sealing structure is applied. The adhesive layer 142 may be provided overlapping the light emitting element 190. Also, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 may be filled with a resin different from the adhesive layer 142. The substrate 152 and the insulating layer 214 are adhered via an adhesive layer 142. For sealing the light emitting element 190 and the light receiving element 110, a solid sealing structure, a hollow sealing structure, or the like can be applied. In FIG. 8, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 is filled with an inert gas (such as nitrogen or argon), and a hollow sealing structure is applied. The adhesive layer 142 may be provided overlapping the light emitting element 190. Also, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 may be filled with a resin different from the adhesive layer 142. The substrate 152 and the insulating layer 214 are adhered via an adhesive layer 142. For sealing the light emitting element 190 and the light receiving element 110, a solid sealing structure, a hollow sealing structure, or the like can be applied. In FIG. 8, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 is filled with an inert gas (such as nitrogen or argon), and a hollow sealing structure is applied. The adhesive layer 142 may be provided overlapping the light emitting element 190. Also, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 may be filled with a resin different from the adhesive layer 142. (nitrogen, argon, etc.) and a hollow sealing structure is applied. The adhesive layer 142 may be provided overlapping the light emitting element 190. Also, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 may be filled with a resin different from the adhesive layer 142. 2 may be provided overlapping the light emitting element 190. Also, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 may be filled with a resin different from the adhesive layer 142. 2, and the insulating layer 214 may be filled with a resin different from the adhesive layer 142. Okay.

[0152] The light emitting element 190 has a stacked structure in which a pixel electrode 191, a common layer 112, a light emitting layer 193, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 191 is connected to a conductive layer 222b included in the transistor 206 through an opening provided in the insulating layer 214. The transistor 206 has a function of controlling the driving of the light emitting element 190. The end portion of the pixel electrode 191 is covered by a partition wall 216. The pixel electrode 191 contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light. The light emitting element 190 has a stacked structure in which a pixel electrode 191, a common layer 112, a light emitting layer 193, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 191 is connected to a conductive layer 222b included in the transistor 206 through an opening provided in the insulating layer 214. The transistor 206 has a function of controlling the driving of the light emitting element 190. The end portion of the pixel electrode 191 is covered by a partition wall 216. The pixel electrode 191 contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light. The light emitting element 190 has a stacked structure in which a pixel electrode 191, a common layer 112, a light emitting layer 193, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 191 is connected to a conductive layer 222b included in the transistor 206 through an opening provided in the insulating layer 214. The transistor 206 has a function of controlling the driving of the light emitting element 190. The end portion of the pixel electrode 191 is covered by a partition wall 216. The pixel electrode 191 contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light. b is connected. The transistor 206 has a function of controlling the driving of the light emitting element 190. The end portion of the pixel electrode 191 is covered by a partition wall 216. The pixel electrode 191 contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light. The light emitting element 190 has a stacked structure in which a pixel electrode 191, a common layer 112, a light emitting layer 193, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 191 is connected to a conductive layer 222b included in the transistor 206 through an opening provided in the insulating layer 214. The transistor 206 has a function of controlling the driving of the light emitting element 190. The end portion of the pixel electrode 191 is covered by a partition wall 216. The pixel electrode 191 contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light. The light emitting element 190 has a stacked structure in which a pixel electrode 191, a common layer 112, a light emitting layer 193, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 191 is connected to a conductive layer 222b included in the transistor 206 through an opening provided in the insulating layer 214. The transistor 206 has a function of controlling the driving of the light emitting element 190. The end portion of the pixel electrode 191 is covered by a partition wall 216. The pixel electrode 191 contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light.

[0153] The light-receiving element 110 has a stacked structure in which a pixel electrode 111, a common layer 112, an active layer 113, a common layer 114, and a common electrode 115 are stacked in this order from the side of the insulating layer 214. The pixel electrode 111 is electrically connected to a conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214. An end portion of the pixel electrode 111 is covered by a partition wall 216. The pixel electrode 111 contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light.

[0154] The light emitted by the light-emitting element 190 is emitted toward the substrate 152 side. Further, light is incident on the light-receiving element 110 through the substrate 152 and the space 143. It is preferable to use a material having high transmittance for visible light for the substrate 152.

[0155] The pixel electrode 111 and the pixel electrode 191 can be manufactured using the same material and the same process. The common layer 112, the common layer 114, and the common electrode 115 are used for both the light-receiving element 110 and the light-emitting element 190. The light-receiving element 110 and the light-emitting element 190 can have the same configuration except that the configurations of the active layer 113 and the light-emitting layer 193 are different. Thereby, the light-receiving element 110 can be incorporated into the display device 100A without significantly increasing the manufacturing process. 0.

[0156] A light-shielding layer BM is provided on the surface of the substrate 152 on the substrate 151 side. The light-shielding layer BM has openings at positions overlapping the light-receiving element 110 and at positions overlapping the light-emitting element 190. By providing the light-shielding layer BM, the range in which the light-receiving element 110 detects light can be controlled. Further, by having the light-shielding layer BM, light can be directly transmitted from the light-emitting element 190 to the light-receiving element 110 without passing through an object. transmitted, which can prevent crosstalk between the light-emitting element 190 and the light-receiving element 110.​​​​​​​​ It is possible to suppress incident light. Therefore, a sensor with less noise and high sensitivity can be realized.

[0157] Transistors 201, 205, and 206 are all formed on substrate 151. These transistors can be fabricated by the same material and the same process.

[0158] On substrate 151, an insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided in this order. A part of the insulating layer 211 functions as a gate insulating layer of each transistor. A part of the insulating layer 213 functions as a gate insulating layer of each transistor. The insulating layer 215 is provided to cover the transistors. The insulating layer 214 is provided to cover the transistors and has a function as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0159] It is preferable to use a material in which impurities such as water and hydrogen hardly diffuse in at least one of the insulating layers covering the transistors. Thereby, the insulating layer can function as a barrier layer. With such a configuration, it is possible to effectively suppress the diffusion of impurities from the outside into the transistors, and the reliability of the display device can be improved.

[0160] As the insulating layer 211, the insulating layer 213, and the insulating layer 215, it is preferable to use an inorganic insulating film respectively. Examples of the inorganic insulating film include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. ​​​​​​​​​​​​​An inorganic insulating film can be used. Further, a hafnium oxide film, a yttrium oxide film, an zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, etc. may be used. Further, two or more of the above-mentioned insulating films may be laminated and used.

[0161] Here, the organic insulating film often has lower barrier properties than the inorganic insulating film. Therefore, it is preferable that the organic insulating film has an opening near the end of the display device 100A. Thereby, it is possible to suppress the entry of impurities from the end of the display device 100A through the organic insulating film. Alternatively, the organic insulating film may be formed such that the end of the organic insulating film is inside the end of the display device 100A,

[0162] An organic insulating film is suitable for the insulating layer 214 that functions as a planarization layer. Examples of the material that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene-based resin, phenol resin, and precursors of these resins.

[0163] In the region 228 shown in FIG. 8, an opening is formed in the insulating layer 214. Thereby, even when an organic insulating film is used for the insulating layer 214, it is possible to suppress the entry of impurities from the outside into the display unit 162 through the insulating layer 214. Therefore, the reliability of the display device 100A can be improved.

[0164] Transistors 201, 205, and 206 function as gates. A conductive layer 221 that can function, an insulating layer 211 that functions as a gate insulating layer, a source and a drain, and conductive layers 222a and 222b that function as such, a semiconductor layer 231, and an insulating layer that functions as a gate insulating layer 213, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is given to a plurality of layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0165] The structure of the transistor included in the display device of the present embodiment is not particularly limited. For example, a p-type transistor, a staggered transistor, an inverse staggered transistor, etc. can be used. Also, either a top gate type or a bottom gate type transistor structure may be used. Or, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0166] In the transistors 201, 205, and 206, a configuration in which the semiconductor layer in which the channel is formed is sandwiched between two gates is applied. The two gates may be connected, and the transistor may be driven by supplying the same signal to these. Or, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0167] The crystallinity of the semiconductor material used for the transistor is also not particularly limited, and an amorphous semiconductor, a semiconductor having crystallinity (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or a partially crystalline region Any of them may be used, such as a semiconductor having a region. Using a crystalline semiconductor is preferable because deterioration of transistor characteristics can be suppressed. It is preferable because deterioration of transistor characteristics can be suppressed.

[0168] The semiconductor layer of the transistor preferably has a metal oxide (also referred to as an oxide semiconductor). Or, the semiconductor layer of the transistor may have silicon. Examples of silicon include amorphous silicon, crystalline silicon (such as low-temperature polysilicon, single-crystalline silicon, etc.). The semiconductor layer of the transistor preferably has a metal oxide (also referred to as an oxide semiconductor). Or, the semiconductor layer of the transistor may have silicon. Examples of silicon include amorphous silicon, crystalline silicon (such as low-temperature polysilicon, single-crystalline silicon, etc.). It is preferable because deterioration of transistor characteristics can be suppressed. Examples thereof include amorphous silicon, crystalline silicon (such as low-temperature polysilicon, single-crystalline silicon, etc.).

[0169] The semiconductor layer preferably has, for example, indium and one or more kinds (M) selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium, and zinc. In particular, M is preferably one or more kinds selected from aluminum, gallium, yttrium, and strontium. The semiconductor layer preferably has, for example, indium and one or more kinds (M) selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium, and zinc. In particular, M is preferably one or more kinds selected from aluminum, gallium, yttrium, and strontium. The semiconductor layer preferably has, for example, indium and one or more kinds (M) selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium, and zinc. In particular, M is preferably one or more kinds selected from aluminum, gallium, yttrium, and strontium. The semiconductor layer preferably has, for example, indium and one or more kinds (M) selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium, and zinc. In particular, M is preferably one or more kinds selected from aluminum, gallium, yttrium, and strontium. The semiconductor layer preferably has, for example, indium and one or more kinds (M) selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium, and zinc. In particular, M is preferably one or more kinds selected from aluminum, gallium, yttrium, and strontium. The semiconductor layer preferably has, for example, indium and one or more kinds (M) selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium, and zinc. In particular, M is preferably one or more kinds selected from aluminum, gallium, yttrium, and strontium.

[0170] In particular, it is preferable to use an oxide (also denoted as IGZO) containing indium (In), gallium (Ga), and zinc (Zn) as the semiconductor layer.

[0171] When the semiconductor layer is an In-M-Zn oxide, the sputtering target used for forming the In-M-Zn oxide preferably has an atomic ratio of indium equal to or greater than the atomic ratio of M. As the atomic ratio of the metal elements of such a sputtering target, In:M:Zn = 1:1:1, In:M:Zn = 1:1:1.2, In:M:Zn = 2:1:3, In:M When the semiconductor layer is an In-M-Zn oxide, the sputtering target used for forming the In-M-Zn oxide preferably has an atomic ratio of indium equal to or greater than the atomic ratio of M. As the atomic ratio of the metal elements of such a sputtering target, In:M:Zn = 1:1:1, In:M:Zn = 1:1:1.2, In:M:Zn = 2:1:3, In:M When the semiconductor layer is an In-M-Zn oxide, the sputtering target used for forming the In-M-Zn oxide preferably has an atomic ratio of indium equal to or greater than the atomic ratio of M. As the atomic ratio of the metal elements of such a sputtering target, In:M:Zn = 1:1:1, In:M:Zn = 1:1:1.2, In:M:Zn = 2:1:3, In:M 1:1:1, In:M:Zn = 1:1:1.2, In:M:Zn = 2:1:3, In:M :Zn = 3:1:2, In:M:Zn = 4:2:3, In:M:Zn = 4:2:4.1, In:M:Zn = 5:1:6, In:M:Zn = 5:1:7, In:M:Zn = 5:1: 8, In:M:Zn = 6:1:6, In:M:Zn = 5:2:5, etc. can be mentioned.

[0172] As the sputtering target, it is preferable to use a target containing polycrystalline oxide because it becomes easier to form a semiconductor layer having crystallinity. Note that the atomic number ratio of the semiconductor layer to be formed includes a plasma minus plus 40% variation of the atomic number ratio of the metal elements contained in the above sputtering target. For example, when the composition of the sputtering target used for the semiconductor layer is I n:Ga:Zn = 4:2:4.1 [atomic number ratio], the composition of the semiconductor layer to be formed may be in the vicinity of I n:Ga:Zn = 4:2:3 [atomic number ratio]. When the atomic number ratio is described as In:Ga:Zn = 4:2:3 or in its vicinity, when the atomic number ratio of In is 4, the atomic number ratio of Ga is 1 or more and 3 or less, and the atomic number ratio of Zn is 2 or more

[0173] and 4 or less. Also, when the atomic number ratio is described as In:Ga:Zn = 5:1:6 or in its vicinity, when the atomic number ratio of In is 5, the atomic number ratio of Ga is greater than 0.1 and 2 or less, and the atomic number ratio of Zn is 5 or more and 7 or less. Also, when the atomic number ratio is described as In:Ga:Zn = 1:1:1 or in its vicinity, when the atomic number ratio of In is 1, the atomic number ratio of Ga is greater than 0.1 and 2 or less, and the atomic number ratio of Zn is greater than 0.1 and 2 or less. When the circuit 164 has a transistor and the display unit 162 has a transistor, they have the same structure. When the atomic number ratio is described as In:Ga:Zn = 1:1:1 or in its vicinity, when the atomic number ratio of In is 1, the atomic number ratio of Ga is greater than 0.1 and 2 or less, and the atomic number ratio of Zn is greater than 0.1 and 2 or less.

[0174] The transistor included in the circuit 164 and the transistor included in the display unit 162 have the same structure. The circuit 164 may have a plurality of transistors, or may have a different structure. The structures may all be the same, or there may be two or more types. The structures of the multiple transistors may all be the same, or there may be two or more types.

[0175] A connection portion 204 is provided in an area of ​​the substrate 151 where the substrate 152 does not overlap. In the portion 204, the wiring 165 is electrically connected to the FPC 172 via the conductive layer 166 and the connection layer 242. The upper surface of the connection portion 204 is processed with the same conductive film as the pixel electrode 191. The resulting conductive layer 166 is exposed. This allows the connection portion 204 and the FPC 172 to be connected. Electrical connection can be made via interconnect layer 242.

[0176] Various optical members can be arranged on the outside of the substrate 152. Examples of the optical members include a polarizing plate. Examples of the optical components include a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light collecting film. In addition, the outside of the substrate 152 is provided with an antistatic film to prevent dust from adhering, It is equipped with a water-repellent film that protects the product from scratches, a hard coat film that prevents scratches from occurring during use, and an impact absorbing layer. It may be placed.

[0177] The substrates 151 and 152 are made of glass, quartz, ceramic, sapphire, or resin. The substrate 151 and the substrate 152 may be made of a flexible material. This can increase the flexibility of the display device.

[0178] The adhesive layer may be a light-curing adhesive such as an ultraviolet-curing adhesive, a reaction-curing adhesive, or a heat-curing adhesive. Various curing adhesives such as elastomeric adhesives, anaerobic adhesives, etc. can be used. Epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, EV A (ethylene vinyl acetate) resin, etc. may be mentioned. In particular, materials with low moisture permeability such as epoxy resin are preferred. Also, a two-component mixed resin may be used. Also, an adhesive sheet or the like may be used.

[0179] As the connection layer 242, an anisotropic conductive film (ACF: Anisotropic Con ductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), etc. can be used.

[0180] The light-emitting element 190 includes a top emission type, a bottom emission type, a dual emission type, etc. For the electrode on the side where light is extracted, a conductive film that transmits visible light is used. Also, for the electrode on the side where light is not extracted, it is preferable to use a conductive film that reflects visible light.

[0181] The light-emitting element 190 has at least a light-emitting layer 193. The light-emitting element 190 may further have, as layers other than the light-emitting layer 193, a substance with high hole injection property, a substance with high hole transport property, a hole blocking material, an electron transporting substance with high electron injection property, or a bipolar substance (substance with high electron transport property and high hole transport property), etc. For example, the common layer 112 preferably has one or both of a hole injection layer and a hole transport layer. For example, the common layer 1 14 preferably has one or both of an electron transport layer and an electron injection layer.

[0182] The common layer 112, the light-emitting layer 193, and the common layer 114 contain low molecular weight compounds and high molecular weight compounds​​​ Any of them can be used, and it may contain an inorganic compound. The common layer 112, the light-emitting layer 1 93, and the layer constituting the common layer 114 can each be formed by a method such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, a coating method, or the like.

[0183] The light-emitting layer 193 may have an inorganic compound such as a quantum dot as a light-emitting material.

[0184] The active layer 113 of the light-receiving element 110 contains a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon , and organic semiconductors containing organic compounds. In this embodiment, an example in which an organic semiconductor is used as the semiconductor included in the active layer is shown. By using an organic semiconductor, the light-emitting layer 193 of the light-emitting element 190 and the active layer 113 of the light-receiving element 110 can be formed by the same method (for example , a vacuum vapor deposition method), and it is preferable because the manufacturing apparatus can be shared.

[0185] Examples of the material of the n-type semiconductor included in the active layer 113 include electron-accepting organic semiconductor materials such as fullerenes (for example, C 60 , C 70 etc ). Further, examples of the material of the p-type semiconductor included in the active layer 113 include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (Copper(II) phthalocyanine; CuPc) and tetraphenyldibenzoperiflanthene (Tetraphenyldibenzoperiflanthene; DBP) etc .

[0186] For example, the active layer 113 is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor. .

[0187] In addition to the gate, source, and drain of the transistor, various wirings and electrodes constituting the display device, etc., materials that can be used for conductive layers such as electrodes include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys mainly composed of such metals. Films containing these materials can be used as a single layer or in a laminated structure.

[0188] In addition, as the conductive material having translucency, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, or graphene can be used. Or, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, and alloy materials containing such metal materials can be used. Or, nitrides of such metal materials (for example, titanium nitride) may be used. When using metal materials, alloy materials (or their nitrides), it is preferably made thin enough to have translucency. Also, laminated films of the above materials can be used as the conductive layer. For example, using a laminated film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These can also be used for conductive layers such as various wirings and electrodes constituting the display device, and conductive layers (conductive layers functioning as pixel electrodes and common electrodes) of display elements.

[0189] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, silicon oxide, silicon oxynitride, silicon nitride oxynitride, silicon nitride, and oxidation ​​​​​​​​​​​​​​Examples include inorganic insulating materials such as aluminum.

[0190] [Display device 100B] Fig. 9A shows a cross-sectional view of the display device 100B.

[0191] The display device 100B mainly differs from the display device 100 A in that it has a lens 149 and a protective layer 195.

[0192] By providing a protective layer 195 that covers the light receiving element 110 and the light emitting element 190, it is possible to suppress the entry of impurities such as water into the light receiving element 110 and the light emitting element 190, and improve the reliability of the light receiving element 110 and the light emitting element 190.

[0193] In the region 228 near the end of the display device 100B, it is preferable that the insulating layer 215 and the protective layer 195 are in contact with each other through the opening of the insulating layer 214. In particular, it is preferable that the inorganic insulating film of the insulating layer 215 and the inorganic insulating film of the protective layer 195 are in contact with each other. This can suppress the entry of impurities from the outside into the display unit 162 through the organic insulating film. Therefore, the reliability of the display device 100B can be improved. Accordingly, it is possible to suppress the entry of impurities from the outside into the display unit 162 through the organic insulating film. Therefore, the reliability of the display device 100B can be improved.

[0194] Fig. 9B shows an example in which the protective layer 195 has a three-layer structure. In Fig. 9B, the protective layer 195 has an inorganic insulating layer 195a on the common electrode 115, an organic insulating layer 195b on the inorganic insulating layer 195a, and an inorganic insulating layer 195c on the organic insulating layer 195b.

[0195] The end of the inorganic insulating layer 195a and the end of the inorganic insulating layer 195c extend outside the end of the organic insulating layer 195b and are in contact with each other. And the inorganic insulating layer 195a is the insulating layer 214 ( ​It is in contact with the insulating layer 215 (inorganic insulating layer) through an opening in the organic insulating layer). As a result, the insulating layer 215 and the protective layer 195 can surround the light receiving element 110 and the light emitting element 190, so that the reliability of the light receiving element 110 and the light emitting element 190 can be enhanced.

[0196] Thus, the protective layer 195 may have a laminated structure of an organic insulating film and an inorganic insulating film. In this case, it is preferable to extend the end portion of the inorganic insulating film outside the end portion of the organic insulating film.

[0197] A lens 149 is provided on the surface of the substrate 152 on the side of the substrate 151. The lens 149 has a convex surface on the side of the substrate 151. The light receiving area of the light receiving element 110 preferably overlaps with the lens 149 and does not overlap with the light emitting layer 193. Thereby, the sensitivity and accuracy of the sensor using the light receiving element 110 can be enhanced.

[0198] The lens 149 preferably has a refractive index of 1.3 or more and 2.5 or less. The lens 149 can be formed using at least one of an inorganic material and an organic material. For example, a material containing a resin can be used for the lens 149. Also, a material containing at least one of an oxide and a sulfide can be used for the lens 149.

[0199] Specifically, a resin containing chlorine, bromine, or iodine, a resin containing a heavy metal atom, a resin containing an aromatic ring, a resin containing sulfur, etc. can be used for the lens 149. Or, a material containing a resin and nanoparticles of a material having a higher refractive index than the resin can be used for the lens 149. Titanium oxide or zirconium oxide, etc. can be used for the nanoparticles.

[0200] In addition, cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, an oxide containing indium and tin, or an oxide containing indium, gallium, and zinc can be used for the lens 149. Alternatively, zinc sulfide or the like can be used for the lens 149.

[0201] In the display device 100B, the protective layer 195 and the substrate 152 are bonded together by the adhesive layer 142. The adhesive layer 142 is provided so as to overlap the light receiving element 110 and the light emitting element 190 respectively, and a solid

[0202] [Display Device 100C] FIG. 10A shows a cross-sectional view of the display device 100C.

[0203] The structure of the transistors in the display device 100C is different from that

[0204] of the display device 100B. The display device 100C has transistors 208, 209, and

[0205] 210 on the substrate 151. The transistors 208, 209, and 210 include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a semiconductor layer having a channel formation region 231i and a pair of low resistance regions 231n, a conductive layer 222a connected to one of the pair of low resistance regions 231n, a conductive layer 222b connected to the other of the pair of low resistance regions 231n, an insulating layer 225 that functions as a gate insulating layer, a conductive layer 223 It is located between the channel formation region 231i. The insulating layer 225 is located between the conductive layer 223 and the channel formation region 231i.

[0206] The conductive layers 222a and 222b are respectively connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215. Among the conductive layers 222a and 222 b, one functions as a source and the other functions as a drain. b, one functions as a source and the other functions as a drain.

[0207] The pixel electrode 191 of the light-emitting element 190 is electrically connected to one of the pair of low-resistance regions 231n of the transistor 208 through the conductive layer 222b. The pixel electrode 191 of the light-emitting element 190 is electrically connected to one of the pair of low-resistance regions 231n of the transistor 208 through the conductive layer 222b.

[0208] The pixel electrode 111 of the light-receiving element 110 is electrically connected to the other of the pair of low-resistance regions 231n of the transistor 209 through the conductive layer 222b. The pixel electrode 111 of the light-receiving element 110 is electrically connected to the other of the pair of low-resistance regions 231n of the transistor 209 through the conductive layer 222b.

[0209] In FIG. 10A, an example in which the insulating layer 225 covers the upper surface and the side surface of the semiconductor layer is shown. On the other hand, in FIG. 10B the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 and does not overlap with the low-resistance region 231n. For example, the structure shown in FIG. 10B can be fabricated by processing the insulating layer 225 using the conductive layer 223 as a mask. In FIG. 10B, an insulating layer 215 is provided covering the insulating layer 225 and the conductive layer 223, and through the opening of the insulating layer 215, the conductive layers 222a and the conductive layer 222b are respectively connected to the low-resistance region 231n. Further, an insulating layer 218 covering the transistor may be provided. layer 222b are respectively connected to the low-resistance region 231n. Further, an insulating layer 218 covering the transistor may be provided. layer 222b are respectively connected to the low-resistance region 231n. Further, an insulating layer 218 covering the transistor may be provided. layer 222b are respectively connected to the low-resistance region 231n. Further, an insulating layer 218 covering the transistor may be provided.

[0210] The display device 100C is different from the display device 100B in that it has a colored layer 147.

[0211] The colored layer 147 is located on the insulating layer 214, and the partition wall 216 is provided so as to cover the upper surface and the side surface of the colored layer 147. It is provided so as to cover.

[0212] In FIG. 10A, the colored layer 147 and the light receiving element 110 are provided so as to be separated from each other. Similarly the colored layer 147 and the light emitting element 190 are provided so as to be separated from each other. The colored layer 147 is not limited to the arrangement of FIG. 10A. As shown in FIG. 10C, the colored layer 147 may cover one or both of the end portions of the pixel electrode 111 and the end portions of the pixel electrode 191.

[0213] In FIG. 10A, since the colored layer 147 is provided separately from the light receiving element 110 and the light emitting element 190 respectively, even if the colored layer 147 is a layer with a low resistivity, it is difficult to affect the light receiving element 110 and the light emitting element 190. Therefore, the range of selection of the material used for the colored layer 147 is wide, which is preferable. It is preferable.

[0214] In FIG. 10C, since the colored layer 147 covers the end portions of the pixel electrode 111 and the end portions of the pixel electrode 191, the area where the colored layer 147 is provided can be widened. The larger the area where the colored layer 147 is provided, the more stray light generated in the display device can be absorbed by the colored layer 147, and the amount of stray light incident on the light receiving element 110 can be reduced, which is preferable. Thereby, noise can be reduced and the sensitivity of the sensor using the light receiving element 110 can be increased. It is possible to increase the sensitivity of the sensor using the light receiving element 110.

[0215] [Display device 100D] FIG. 11 shows a cross-sectional view of the display device 100D.

[0216] The display device 100D is different from the display device 1 00C in that it does not have the colored layer 147 but has the colored layer 148a.

[0217] The colored layer 148a has a portion that contacts the upper surface of the pixel electrode 111 included in the light receiving element 110 and a portion that contacts the side surface of the partition wall 216.

[0218] By absorbing stray light generated within the display device 100D, the colored layer 148a can reduce the amount of stray light incident on the light receiving element 110. Thereby, noise can be reduced and the sensitivity of the sensor using the light receiving element 110 can be enhanced.

[0219] Further, the display device 100D is different from the display device 100C in that it does not have the substrates 151 and 152, but has the substrates 153, 15 4, the adhesive layer 155, and the insulating layer 212.

[0220] The substrate 153 and the insulating layer 212 are bonded together by the adhesive layer 155. The substrate 154 and the protective layer 195 are bonded together by the adhesive layer 142.

[0221] The display device 100D is configured by transferring the insulating layer 212, the transistors 208, the transistors 209, the light receiving element 110, the light emitting element 190, etc. formed on the fabrication substrate onto the substrate 153. The substrates 153 and 154 preferably each have flexibility. Thereby, the flexibility of the display device 100D can be enhanced.

[0222] As the insulating layer 212, an inorganic insulating film that can be used for the insulating layers 211, 213, and 215 can be used.

[0223] Further, an example in which the display device 100C does not have the lens 149 is shown, and an example in which the display device 100D has the lens 149 is shown. The lens 149 can be appropriately provided according to the use of the sensor or the like.

[0224] [Metal oxide] Hereinafter, metal oxides applicable to the semiconductor layer will be described.

[0225] In this specification and the like, metal oxides containing nitrogen may also be collectively referred to as metal oxides (metal oxi de). Further, metal oxides containing nitrogen may be referred to as metal oxynitrides (met al oxynitride). For example, zinc oxynitride (ZnON) Any metal oxide containing nitrogen may be used for the semiconductor layer.

[0226] In this specification and the like, CAAC (c-axis aligned crystal ) and CAC (Cloud-Aligned Composite) may be described. CAAC represents an example of a crystal structure, and CAC represents an example of the configuration of a function or material.

[0227] For example, CAC (Cloud-Aligned Composite)-O S (Oxide Semiconductor) can be used for the semiconductor layer.

[0228] CAC-OS or CAC-metal oxide has a conductive function in part of the material and an insulating function in part of the material, and has a function as a semiconductor in the whole material . When CAC-OS or CAC-metal oxide is used for the semiconductor layer of a transistor, the conductive function is the function of flowing electrons (or holes) serving as carriers whereas the insulating function is the function of not flowing electrons serving as carriers. By causing the conductive function and the insulating function to act complementarily, respectively, a switching function (On / O ff function) to CAC-OS or CAC-metal oxide. In CAC-OS or CAC-metal oxide, By separating the functions, the functionality of both can be maximized.

[0229] In addition, CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. In addition, the conductive and insulating regions in the material are formed at the nanoparticle level. In addition, the conductive and insulating regions may be separated by a metal. In addition, the conductive area may be observed as a cloud-like connected area with a blurred periphery. There may be cases where this occurs.

[0230] In addition, in the CAC-OS or CAC-metal oxide, the conductive region and the insulating region are The peripheral region is 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. The following sizes may be present in the material:

[0231] In addition, CAC-OS or CAC-metal oxide has different band gaps. For example, CAC-OS or CAC-metal oxi de is a component with a wide gap due to the insulating region and a component with a narrow gap due to the conductive region. In the case of this configuration, when a carrier flows, In the narrow gap component, carriers mainly flow. The component having a narrow gap acts complementary to the component having a wide gap. Carriers also flow through the component having a wide gap in conjunction with the component. Therefore, the above C When AC-OS or CAC-metal oxide is used in the channel formation region of a transistor a high current driving force, that is, a large on-current, and a high field effect mobility can be obtained in the on-state of the transistor.

[0232] That is, CAC-OS or CAC-metal oxide can also be referred to as a matrix composite (matrix composite), or a metal matrix composite (metal matrix composite).

[0233] Oxide semiconductors (metal oxides) can be divided into single crystal oxide semiconductors and other non-single crystal oxide semiconductors Examples of non-single crystal oxide semiconductors include CAAC-OS (c-a xis aligned crystalline oxide semiconduc tor), polycrystalline oxide semiconductors, nc-OS (nanocrystalline oxi de semiconductor), pseudo-amorphous oxide semiconductors (a-like OS: amorphous-like oxide semiconductor), and amorphous oxide semiconductors.

[0234] CAAC-OS has a c-axis orientation and a plurality of nanocrystals are connected in the a-b plane direction resulting in a crystal structure with strain. Note that strain refers to a location where the lattice arrangement changes between a region with an aligned lattice arrangement and another region with an aligned lattice arrangement in the region where a plurality of nanocrystals are connected.

[0235] The nanocrystals are based on a hexagonal shape, but are not necessarily regular hexagonal shapes and may be non-regular hexagonal shapes. In addition, in the case of strain, there may be lattice arrays such as pentagons and heptagons. Note that , in CAAC-OS, it is difficult to confirm a clear grain boundary (also called a grain boundary) even in the vicinity of strain. That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice array. This is because CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the a-b plane direction and the interatomic bond distance changes due to the substitution of metal elements. ー).

[0236] In addition, CAAC-OS has a tendency to have a layered crystal structure (also called a layered structure) in which a layer containing indium and oxygen (hereinafter referred to as an In layer) and a layer containing element M , zinc, and oxygen (hereinafter referred to as an (M,Zn) layer) are laminated. Note that indium and element M are mutually substitutable , and when element M in the (M,Zn) layer is substituted with indium, it can also be represented as an (In,M,Zn) layer . Also, when indium in the In layer is substituted with element M, it can also be represented as an (In,M) layer .

[0237] CAAC-OS is a highly crystalline metal oxide. On the other hand, since it is difficult to confirm a clear grain boundary in CAAC-OS, it can be said that a decrease in electron mobility due to grain boundaries is less likely to occur. In addition, since the crystallinity of metal oxides may decrease due to the incorporation of impurities or the generation of defects, CAAC-OS can also be said to be a metal oxide with few impurities and defects (such as oxygen vacancies (V O : oxygen vacancy ancy)). Therefore, CAAC- Metal oxides with an OS have stable physical properties. Therefore, those with CAAC-OS are heat-resistant and highly reliable.

[0238] nc-OS has periodicity in the atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less). Further, nc-OS has no regularity in the crystal orientation between different nanocrystals. Therefore, there is no orientation in the entire film. Thus, nc-OS may not be distinguishable from a-like OS or an amorphous oxide semiconductor depending on the analysis method.

[0239] Indium-gallium-zinc oxide (hereinafter, IGZO), which is a kind of metal oxide having indium, gallium, and zinc, may have a stable structure by forming the above-described nanocrystals. In particular, since IGZO tends to be difficult to grow crystals in the air, a crystal smaller than a large crystal (here, a crystal of several mm or a crystal of several cm), for example, the above-described nanocrystal, may be structurally more stable.

[0240] a-like OS is a metal oxide having a structure between nc-OS and an amorphous oxide semiconductor. a-like OS has a loose or low-density region. That is, a-like OS has lower crystallinity than nc-OS and CAAC-OS.

[0241] Oxide semiconductors (metal oxides) have various structures, each having different characteristics. The oxide semiconductor according to one aspect of the present invention may have two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, a-like OS, nc-OS, and CAAC-OS.

[0242] ​​​​​​ The metal oxide film that functions as a semiconductor layer can be formed using either an inert gas or an oxygen gas, or both. Note that there is no particular limitation on the flow rate ratio (oxygen partial pressure) of oxygen during the formation of the metal oxide film. However, in order to obtain a transistor with high field-effect mobility, in the case, the flow rate ratio (oxygen partial pressure) of oxygen during the formation of the metal oxide film is preferably 0% or more and 3 0% or less, more preferably 5% or more and 30% or less, and even more preferably 7% or more and 15% or less.

[0243] The metal oxide preferably has an energy gap of 2 eV or more, more preferably 2.5 eV or more and even more preferably 3 eV or more. By using a metal oxide with a wide energy gap in this way, the off-current of the transistor can be reduced.

[0244] The substrate temperature during the formation of the metal oxide film is preferably 350 °C or less, more preferably room temperature or more and 200 °C or less and even more preferably room temperature or more and 130 °C or less. When the substrate temperature during the formation of the metal oxide film is room temperature, the productivity can be increased, which is preferable.

[0245] The metal oxide film can be formed by a sputtering method. In addition, for example, PL D method, PECVD method, thermal CVD method, ALD method, vacuum evaporation method, etc. may also be used.

[0246] As described above, the display device of the present embodiment has a light receiving element and a light emitting element in the display unit, and the display unit has both a function of displaying an image and a function of detecting light. Thereby, compared with the case where a sensor is provided outside the display unit or outside the display device, the miniaturization and weight reduction of the electronic device can be achieved. It can be illustrated. In addition, it can also be combined with a sensor provided outside the display unit or outside the display device to realize a more multifunctional electronic device. It can also be combined with a sensor provided outside the display unit or outside the display device to realize a more multifunctional electronic device.

[0247] The light-receiving element can have at least one layer other than the active layer in the same configuration as the light-emitting element (EL element). Furthermore, the light-receiving element can have all layers other than the active layer in the same configuration as the light-emitting element (EL element). For example, by simply adding a process of forming the active layer to the manufacturing process of the light-emitting element, the light-emitting element and the light-receiving element can be formed on the same substrate. For example, by simply adding a process of forming the active layer to the manufacturing process of the light-emitting element, the light-emitting element and the light-receiving element can be formed on the same substrate. In addition, the pixel electrode and the common electrode of the light-receiving element and the light-emitting element can be formed of the same material and in the same process, respectively. Also, by manufacturing the circuit electrically connected to the light-receiving element and the circuit electrically connected to the light-emitting element with the same material and in the same process, the manufacturing process of the display device can be simplified. In addition, the pixel electrode and the common electrode of the light-receiving element and the light-emitting element can be formed of the same material and in the same process, respectively. Also, by manufacturing the circuit electrically connected to the light-receiving element and the circuit electrically connected to the light-emitting element with the same material and in the same process, the manufacturing process of the display device can be simplified. In this way, a display device with a built-in light-receiving element and high convenience can be manufactured without having a complicated process. In this way, a display device with a built-in light-receiving element and high convenience can be manufactured without having a complicated process. Also, the display device of this embodiment has a colored layer between the light-receiving element and the light-emitting element. The colored layer may also serve as a partition that electrically insulates the light-receiving element and the light-emitting element. Since the colored layer can absorb stray light in the display device, the sensitivity of the sensor using the light-receiving element can be increased.

[0248] Also, the display device of this embodiment has a colored layer between the light-receiving element and the light-emitting element. The colored layer may also serve as a partition that electrically insulates the light-receiving element and the light-emitting element. Since the colored layer can absorb stray light in the display device, the sensitivity of the sensor using the light-receiving element can be increased. Also, the display device of this embodiment has a colored layer between the light-receiving element and the light-emitting element.

[0249] This embodiment can be appropriately combined with other embodiments. Also, in this specification, when a plurality of configuration examples are shown in one embodiment, the configuration examples can be appropriately combined. This embodiment can be appropriately combined with other embodiments. Also, in this specification, when a plurality of configuration examples are shown in one embodiment, the configuration examples can be appropriately combined. It is possible.

[0250] (Embodiment 2) In this embodiment, a display device according to an aspect of the present invention will be described with reference to FIG. 12.

[0251] A display device according to an aspect of the present invention includes a first pixel circuit having a light receiving element and a second pixel circuit having a light emitting element. The first pixel circuit and the second pixel circuit are each arranged in a matrix. shape.

[0252] FIG. 12A shows an example of the first pixel circuit having a light receiving element, and FIG. 12B shows an example of the second pixel circuit having a light emitting element. element.

[0253] The pixel circuit PIX1 shown in FIG. 12A includes a light receiving element PD, transistors M1, M 2, transistor M3, transistor M4, and capacitor C1. Here, an example using a photodiode as the light receiving element PD is shown. element.

[0254] The cathode of the light receiving element PD is electrically connected to the wiring V1, and the anode is electrically connected to one of the source or drain of the transistor M1. The gate of the transistor M1 is electrically connected to the wiring T X, and the other of the source or drain is electrically connected to one electrode of the capacitor C1, one of the source or drain of the transistor M2, and the gate of the transistor M3. X, and the other of the source or drain is electrically connected to one electrode of the capacitor C1, one of the source or drain of the transistor M2, and the gate of the transistor M3. The gate of the transistor M2 is electrically connected to the wiring RES, and the other of the source or drain is electrically connected to the wiring V2. One of the source or drain of the transistor M3 is electrically connected to the wiring V3, and the other of the source or drain is electrically connected to one of the source or drain of the transistor M4. The gate of the transistor M2 is electrically connected to the wiring RES, and the other of the source or drain is electrically connected to the wiring V2. One of the source or drain of the transistor M3 is electrically connected to the wiring V3, and the other of the source or drain is electrically connected to one of the source or drain of the transistor M4. The gate of the transistor M4 is electrically connected to the wiring SE, and the other of the source or drain is electrically connected to the wiring OUT1. The gate of the transistor M4 is electrically connected to the wiring SE, and the other of the source or drain is electrically connected to the wiring OUT1. The gate of the transistor M4 is electrically connected to the wiring SE, and the other of the source or drain is electrically connected to the wiring OUT1. The gate of the transistor M4 is electrically connected to the wiring SE, and the other of the source or drain is electrically connected to the wiring OUT1.

[0255] Constant potentials are supplied to wiring V1, wiring V2, and wiring V3, respectively. When the light receiving element PD is driven in reverse bias, a potential lower than the potential of wiring V1 is supplied to wiring V2. Transistor M2 is controlled by the signal supplied to wiring RES and has a function of resetting the potential of the node connected to the gate of transistor M 3 to the potential supplied to wiring V2. Transistor M1 is controlled by the signal supplied to wiring TX and has a function of controlling the timing at which the potential of the node changes according to the current flowing through the light receiving element PD. Transistor M1 is controlled by the signal supplied to wiring TX and has a function of controlling the timing at which the potential of the node changes according to the current flowing through the light receiving element PD. Transistor M3 functions as an amplification transistor that outputs according to the potential of the above node. Transistor M4 is controlled by the signal supplied to wiring SE and functions as a selection transistor for reading out the output according to the potential of the above node to an external circuit connected to wiring OUT1. Transistor M3 functions as an amplification transistor that outputs according to the potential of the above node. Transistor M4 is controlled by the signal supplied to wiring SE and functions as a selection transistor for reading out the output according to the potential of the above node to an external circuit connected to wiring OUT1. Transistor M3 functions as an amplification transistor that outputs according to the potential of the above node. Transistor M4 is controlled by the signal supplied to wiring SE and functions as a selection transistor for reading out the output according to the potential of the above node to an external circuit connected to wiring OUT1. Transistor M3 functions as an amplification transistor that outputs according to the potential of the above node. Transistor M4 is controlled by the signal supplied to wiring SE and functions as a selection transistor for reading out the output according to the potential of the above node to an external circuit connected to wiring OUT1. Transistor M3 functions as an amplification transistor that outputs according to the potential of the above node. Transistor M4 is controlled by the signal supplied to wiring SE and functions as a selection transistor for reading out the output according to the potential of the above node to an external circuit connected to wiring OUT1.

[0256] The pixel circuit PIX2 shown in FIG. 12B includes a light emitting element EL, transistors M5, M 6, transistor M7, and a capacitor element C2. Here, an example using a light emitting diode as the light emitting element EL is shown. In particular, it is preferable to use an organic EL element as the light emitting element EL. 6, transistor M7, and a capacitor element C2. Here, an example using a light emitting diode as the light emitting element EL is shown. In particular, it is preferable to use an organic EL element as the light emitting element EL. 6, transistor M7, and a capacitor element C2. Here, an example using a light emitting diode as the light emitting element EL is shown. In particular, it is preferable to use an organic EL element as the light emitting element EL.

[0257] The gate of transistor M5 is electrically connected to wiring VG, one of the source or drain is electrically connected to wiring VS, and the other of the source or drain is electrically connected to one electrode of capacitor element C2 and the gate of transistor M6. One of the source or drain of transistor M6 is electrically connected to wiring V4, and the other is electrically connected to the anode of light emitting element EL and one of the source or drain of transistor M7. Transistor M7 The gate of transistor M5 is electrically connected to wiring VG, one of the source or drain is electrically connected to wiring VS, and the other of the source or drain is electrically connected to one electrode of capacitor element C2 and the gate of transistor M6. One of the source or drain of transistor M6 is electrically connected to wiring V4, and the other is electrically connected to the anode of light emitting element EL and one of the source or drain of transistor M7. Transistor M7 The gate of transistor M5 is electrically connected to wiring VG, one of the source or drain is electrically connected to wiring VS, and the other of the source or drain is electrically connected to one electrode of capacitor element C2 and the gate of transistor M6. One of the source or drain of transistor M6 is electrically connected to wiring V4, and the other is electrically connected to the anode of light emitting element EL and one of the source or drain of transistor M7. Transistor M7 The gate of transistor M5 is electrically connected to wiring VG, one of the source or drain is electrically connected to wiring VS, and the other of the source or drain is electrically connected to one electrode of capacitor element C2 and the gate of transistor M6. One of the source or drain of transistor M6 is electrically connected to wiring V4, and the other is electrically connected to the anode of light emitting element EL and one of the source or drain of transistor M7. Transistor M7 The gate of transistor M5 is electrically connected to wiring VG, one of the source or drain is electrically connected to wiring VS, and the other of the source or drain is electrically connected to one electrode of capacitor element C2 and the gate of transistor M6. One of the source or drain of transistor M6 is electrically connected to wiring V4, and the other is electrically connected to the anode of light emitting element EL and one of the source or drain of transistor M7. Transistor M7 The gate is electrically connected to the wiring MS, and the other of the source or drain is electrically connected to the wiring OUT2. The cathode of the light-emitting element EL is electrically connected to the wiring V5.

[0258] A constant potential is supplied to each of the wiring V4 and the wiring V5. The anode side of the light-emitting element EL can be set to a high potential, and the cathode side can be set to a potential lower than that of the anode side. The transistor M5 is controlled by the signal supplied to the wiring VG and functions as a selection transistor for controlling the selection state of the pixel circuit PIX2. Also, the transistor M6 functions as a drive transistor for controlling the current flowing through the light-emitting element EL according to the potential supplied to its gate. When the transistor M5 is in the conductive state, the potential supplied to the wiring VS is supplied to the gate of the transistor M6, and the emission luminance of the light-emitting element EL can be controlled according to that potential. The transistor M7 is controlled by the signal supplied to the wiring MS and has a function of outputting the potential between the transistor M6 and the light-emitting element EL to the outside via the wiring OUT2. The wiring V1 to which the cathode of the light-receiving element PD is electrically connected and the wiring V5 to which the cathode of the light-emitting element EL is electrically connected can be in the same layer and at the same potential. In the display device of this embodiment, an image may be displayed by causing the light-emitting element to emit light in a pulse shape. By shortening the driving time of the light-emitting element, it is possible to reduce the power consumption of the display device and suppress heat generation. In particular, since the organic EL element has excellent frequency characteristics, it is suitable. The frequency can be, for example, 1 kHz or more and 100 MHz or less.

[0259]

[0260]

[0261] ​​​​​​​​​​Here, for the transistors M1, M2, M3, and M4 included in the pixel circuit PIX1, and the transistors M5, M6, and M7 included in the pixel circuit PIX2, it is preferable to apply transistors using a metal oxide (oxide semiconductor) to the semiconductor layer in which channels are formed. Transistors using a metal oxide with a wider bandgap and a lower carrier density than silicon can achieve an extremely small off-current. Therefore, due to this small off-current, it is possible to hold the charges accumulated in the capacitive element connected in series with the transistor over a long period. Therefore, in particular, for the transistors M1, M2, and M5 connected in series to the capacitive element C1 or C2, it is preferable to use transistors to which an oxide semiconductor is applied. Also, by using transistors to which an oxide semiconductor is similarly applied for the other transistors, the manufacturing cost can be reduced.

[0262] Moreover, for the transistors M1 to M7, it is also possible to use transistors in which silicon is applied to the semiconductor in which channels are formed. In particular, by using highly crystalline silicon such as single-crystalline silicon or polycrystalline silicon, a high field-effect mobility can be achieved, and a faster operation becomes possible, which is preferable. Also, a configuration in which transistors to which an oxide semiconductor is applied are used for one or more of the transistors M1 to M7, and transistors to which silicon is applied are used for the rest is also good. Moreover, for the transistors M1 to M7, it is also possible to use transistors in which silicon is applied to the semiconductor in which channels are formed. In particular, by using highly crystalline silicon such as single-crystalline silicon or polycrystalline silicon, a high field-effect mobility can be achieved, and a faster operation becomes possible, which is preferable.

[0263] Also, a configuration in which transistors to which an oxide semiconductor is applied are used for one or more of the transistors M1 to M7, and transistors to which silicon is applied are used for the rest is also good. Moreover, for the transistors M1 to M7, it is also possible to use transistors in which silicon is applied to the semiconductor in which channels are formed. In particular, by using highly crystalline silicon such as single-crystalline silicon or polycrystalline silicon, a high field-effect mobility can be achieved, and a faster operation becomes possible, which is preferable.

[0264] Also, a configuration in which transistors to which an oxide semiconductor is applied are used for one or more of the transistors M1 to M7, and transistors to which silicon is applied are used for the rest is also good. Moreover, for the transistors M1 to M7, it is also possible to use transistors in which silicon is applied to the semiconductor in which channels are formed. In particular, by using highly crystalline silicon such as single-crystalline silicon or polycrystalline silicon, a high field-effect mobility can be achieved,

[0265] In addition, in FIG. 12A and FIG. 12B, the transistors are assumed to be n-channel transistors. Although shown, p-channel transistors can also be used.

[0266] The transistors in the pixel circuit PIX1 and the transistors in the pixel circuit PIX2 are the same. It is preferable that they are formed side by side on one substrate. The transistors of the pixel circuit PIX1 and the transistors of the pixel circuit PIX2 are mixed and periodically arranged in one area. It is preferable to have a configuration in which the electrodes are arranged in a row.

[0267] In addition, a transistor and a capacitor are provided at a position overlapping with the light receiving element PD or the light emitting element EL. It is preferable to provide one or more layers having one or both of these. This reduces the effective area occupied by the light receiving section or display section, thereby enabling a high-definition light receiving section or display section to be realized.

[0268] This embodiment mode can be combined with other embodiment modes as appropriate.

[0269] (Embodiment 3) In this embodiment, electronic devices according to one embodiment of the present invention will be described with reference to FIGS. do.

[0270] The electronic devices of this embodiment include the display device of one embodiment of the present invention. The display device of one embodiment of the present invention can be used as the display portion. The device has a light detection function, so it can perform biometric authentication on the display or by touching the screen. This allows the detection of near-touch, which can improve the functionality and convenience of electronic devices. It can be improved.

[0271] Examples of electronic devices include television sets, desktop or notebook personal computers, monitors for computers, digital signage, pachinko machines, and other large-screen electronic devices such as large game machines. In addition, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, portable information terminals, audio playback devices, and the like can be mentioned. The electronic device of the present embodiment may have a sensor (a device having a function of measuring force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, odor, or infrared rays). The electronic device of the present embodiment can have various functions. For example, it can have functions such as displaying various information (still images, moving images, text images, etc.) on a display unit, a touch panel function, a calendar, a function of displaying a date or time, a function of executing various software (programs), a wireless communication function, and a function of reading programs or data recorded on a recording medium. The electronic device 6500 shown in FIG. 13A is a portable information terminal that can be used as a smartphone. The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, buttons 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display unit 6502 has a touch panel function.

[0272] As the electronic device, for example, a television set, a desktop or notebook personal computer, a monitor for a computer, digital signage, a pachinko machine, or other large-screen electronic devices such as a large game machine, and in addition, a digital camera, a digital video camera, a digital photo frame, a mobile phone, a portable game machine, a portable information terminal, an audio playback device, etc. can be mentioned. The electronic device of this embodiment may have a sensor (including a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, odor, or infrared rays). The electronic device of this embodiment can have various functions. For example, it can have functions such as displaying various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a calendar, a function of displaying a date or time, a function of executing various software (programs), a wireless communication function, and a function of reading programs or data recorded on a recording medium. The electronic device shown in FIG. 13A is a portable information terminal that can be used as a smartphone.

[0273] The electronic device of this embodiment can have various functions. For example, it can have functions such as displaying various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a calendar, a function of displaying a date or time, a function of executing various software (programs), a wireless communication function, and a function of reading programs or data recorded on a recording medium. The electronic device shown in FIG. 13A is a portable information terminal that can be used as a smartphone. The electronic device of this embodiment can have various functions. For example, it can have functions such as displaying various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a calendar, a function of displaying a date or time, a function of executing various software (programs), a wireless communication function, and a function of reading programs or data recorded on a recording medium. The electronic device shown in FIG. 13A is a portable information terminal that can be used as a smartphone. The electronic device of this embodiment can have various functions. For example, it can have functions such as displaying various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a calendar, a function of displaying a date or time, a function of executing various software (programs), a wireless communication function, and a function of reading programs or data recorded on a recording medium.

[0274] The electronic device 6500 shown in FIG. 13A is a portable information terminal that can be used as a smartphone. The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, buttons 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display unit 6502 has a touch panel function.

[0275] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, buttons 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The display unit 6502 has a touch panel function. The electronic device 6500 has a housing 6501, a display unit 6502, a power button 6503, buttons 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The display unit 6502 has a touch panel function. The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, buttons 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The display unit 6502 has a touch panel function.

[0276] The display device according to an aspect of the present invention can be applied to the display unit 6502.

[0277] FIG. 13B is a schematic cross-sectional view including the end portion on the microphone 6506 side of the housing 6501.

[0278] A protective member 6510 having translucency is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510. .

[0279] The display panel 6511, the optical member 6512, and the touch sensor panel 6513 are fixed to the protective member 6510 by an adhesive layer (not shown).

[0280] In a region outside the display unit 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded-back portion. An I C 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals provided on the printed circuit board 6517.

[0281] The flexible display according to an aspect of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. Further, since the display panel 6511 is extremely thin, it is possible to mount a large-capacity battery 6518 while suppressing the thickness of the electronic device. Further, by folding back a part of the display panel 6511 and arranging the connection portion between the FPC 6515 and the back side of the pixel portion, a narrow-bezel electronic device can be realized.

[0282] FIG. 14A shows an example of a television apparatus. The television apparatus 7100 includes a housing 7101 in which a display unit 7000 is incorporated. Here, a configuration is shown in which the housing 7101 is supported by a stand 7103.

[0283] The display device according to an aspect of the present invention can be applied to the display unit 7000.

[0284] The operation of the television apparatus 7100 shown in FIG. 14A can be performed by operation switches provided in the housing 7101 or by a separate remote control operation unit 7111. Alternatively, the display unit 7000 may be provided with a touch sensor, and the television apparatus 7100 may be operated by touching the display unit 7000 with a finger or the like. The remote control operation unit 7111 may have a display unit for displaying information output from the remote control operation unit 7111. Channel and volume operations can be performed by operation keys or a touch panel provided in the remote control operation unit 7111, and the video displayed on the display unit 7000 can be operated.

[0285] Note that the television apparatus 7100 has a configuration including a receiver and a modem. The receiver can receive general television broadcasts. Also, by connecting to a wired or wireless communication network via a modem, one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers) information communication can also be performed.

[0286] FIG. 14B shows an example of a notebook personal computer. The notebook personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 721 ​​​​3. It has an external connection port 7214 or the like. A display unit 7000 is incorporated in the housing 7211. ing.

[0287] The display device according to one aspect of the present invention can be applied to the display unit 7000.

[0288] Figures 14C and 14D show an example of digital signage.

[0289] The digital signage 7300 shown in Figure 14C has a housing 7301, a display unit 7000, and a speaker 7303 or the like. Furthermore, it can have an LED lamp, operation keys (including a power switch or an operation switch), connection terminals, various sensors, a microphone, etc. ating switch), connection terminals, various sensors, a microphone, etc.

[0290] Figure 14D shows a digital signage 7400 attached to a cylindrical column 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the column 7401. ing.

[0291] In Figures 14C and 14D, the display device according to one aspect of the present invention can be applied to the display unit 7000. ing.

[0292] The larger the display unit 7000 is, the more information can be provided at once. Also, the larger the display unit 7000 is, the more easily it catches people's eyes, for example, it can enhance the advertising effect. ing.

[0293] By applying a touch panel to the display unit 7000, not only can an image or video be shown on the display unit 7000, but also the user can operate it intuitively, which is preferable. Also, when used for applications such as providing route information or traffic information, the usability can be enhanced by intuitive operation. ing.​​​​​

[0294] Also, as shown in FIGS. 14C and 14D, the digital signage 7300 or the digital signage 7400 is preferably capable of wireless communication and cooperation with an information terminal device 7311 such as a smartphone held by a user or the information terminal device 7411. For example, the information of the advertisement displayed on the display unit 7 000 can be displayed on the screen of the information terminal device 7311 or the information terminal device 7411. Also, by operating the information terminal device 7311 or the information terminal device 7411 the display on the display unit 7000 can be switched.

[0295] Also, a game can be executed on the digital signage 7300 or the digital signage 7400 using the screen of the information terminal device 7 311 or the information terminal device 7411 as an operation means (controller). As a result, an unspecified number of users can participate in the game simultaneously and have fun

[0296] The electronic device shown in FIGS. 15A to 15F includes a housing 9000, a display unit 9001, a speaker 90 03, operation keys 9005 (including a power switch or an operation switch), connection terminals 900 6, a sensor 9007 (having a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity , inclination, vibration, odor or infrared rays), a microphone 90 08, etc.

[0297] The electronic device shown in FIGS. 15A to 15F has various functions. For example, functions of displaying various information (still images, videos, text images, etc.) on the display unit, touch panel functions, calendar functions, - A function to display a date, time, etc., a function to control processing by various software (programs), a wireless communication function, a function to read and process a program or data recorded on a recording medium, etc. can be provided. Note that the functions of the electronic device are not limited to these, and various functions can be provided. The electronic device may have a plurality of display units. Further, a camera or the like may be provided in the electronic device, and it may have a function to capture a still image or a moving image and store it in a recording medium (external or built into the camera), a function to display the captured image on a display unit, etc. Processing, a function to control processing by various software (programs), a wireless communication function, a function to read and process a program or data recorded on a recording medium, etc. can be provided. Note that the functions of the electronic device are not limited to these, and various functions can be provided. The electronic device may have a plurality of display units. Further, a camera or the like may be provided in the electronic device, and it may have a function to capture a still image or a moving image and store it in a recording medium (external or built into the camera), a function to display the captured image on a display unit, etc. Reading and processing the program or data recorded on the recording medium, etc. can be provided. Note that the functions of the electronic device are not limited to these, and various functions can be provided. The electronic device may have a plurality of display units. Further, a camera or the like may be provided in the electronic device, and it may have a function to capture a still image or a moving image and store it in a recording medium (external or built into the camera), a function to display the captured image on a display unit, etc. And so on. The functions of the electronic device are not limited to these, and various functions can be provided. The electronic device may have a plurality of display units. Further, a camera or the like may be provided in the electronic device, and it may have a function to capture a still image or a moving image and store it in a recording medium (external or built into the camera), a function to display the captured image on a display unit, etc. Also, a camera or the like may be provided in the electronic device, and it may have a function to capture a still image or a moving image and store it in a recording medium (external or built into the camera), a function to display the captured image on a display unit, etc. The function of storing in a recording medium (external or built into the camera), the function of displaying the captured image on a display unit, etc. may be provided. It may also be good.

[0298] Details of the electronic device shown in FIGS. 15A to 15F will be described below.

[0299] FIG. 15A is a perspective view showing a portable information terminal 9101. The portable information terminal 9101 can be used, for example, as a smartphone. The portable information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, etc. Further, the portable information terminal 9101 can display character and image information on its plurality of surfaces. FIG. 15A shows an example in which three icons 9050 are displayed. Also, information 9051 indicated by a dashed rectangle can be displayed on another surface of the display unit 9001. As an example of the information 9051, there are notifications of incoming calls such as e-mails, SNS, and phone calls, titles, sender names, dates, times, remaining battery levels, antenna reception strengths, etc. of e-mails and SNS. Or, an icon 9050 or the like may be displayed at the position where the information 9051 is displayed. For example, it can be used as a smartphone. The portable information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, etc. Further, the portable information terminal 9101 can display character and image information on its plurality of surfaces. FIG. 15A shows an example in which three icons 9050 are displayed. Also, information 9051 indicated by a dashed rectangle can be displayed on another surface of the display unit 9001. As an example of the information 9051, there are notifications of incoming calls such as e-mails, SNS, and phone calls, titles, sender names, dates, times, remaining battery levels, antenna reception strengths, etc. of e-mails and SNS. Or, an icon 9050 or the like may be displayed at the position where the information 9051 is displayed. Speaker 9003, connection terminal 9006, sensor 9007, etc. may be provided. Further, the portable information terminal 9101 can display character and image information on its plurality of surfaces. FIG. 15A shows an example in which three icons 9050 are displayed. Also, information 9051 indicated by a dashed rectangle can be displayed on another surface of the display unit 9001. As an example of the information 9051, there are notifications of incoming calls such as e-mails, SNS, and phone calls, titles, sender names, dates, times, remaining battery levels, antenna reception strengths, etc. of e-mails and SNS. Or, an icon 9050 or the like may be displayed at the position where the information 9051 is displayed. 101 can display character and image information on its plurality of surfaces. FIG. 15A shows an example in which three icons 9050 are displayed. Also, information 9051 indicated by a dashed rectangle can be displayed on another surface of the display unit 9001. As an example of the information 9051, there are notifications of incoming calls such as e-mails, SNS, and phone calls, titles, sender names, dates, times, remaining battery levels, antenna reception strengths, etc. of e-mails and SNS. Or, an icon 9050 or the like may be displayed at the position where the information 9051 is displayed. In FIG. 15A, an example in which three icons 9050 are displayed is shown. Also, information 9051 indicated by a dashed rectangle can be displayed on another surface of the display unit 9001. As an example of the information 9051, there are notifications of incoming calls such as e-mails, SNS, and phone calls, titles, sender names, dates, times, remaining battery levels, antenna reception strengths, etc. of e-mails and SNS. Or, an icon 9050 or the like may be displayed at the position where the information 9051 is displayed. Shown on another surface of the display unit 9001. As an example of the information 9051, there are notifications of incoming calls such as e-mails, SNS, and phone calls, titles, sender names, dates, times, remaining battery levels, antenna reception strengths, etc. of e-mails and SNS. Or, an icon 9050 or the like may be displayed at the position where the information 9051 is displayed. Examples of the information 9051 include notifications of incoming calls such as e-mails, SNS, and phone calls, titles, sender names, dates, times, remaining battery levels, antenna reception strengths, etc. of e-mails and SNS. Sender name, date, time, remaining battery level, antenna reception strength, etc. Or, an icon 9050 or the like may be displayed at the position where the information 9051 is displayed.

[0300] FIG. 15B is a perspective view showing a portable information terminal 9102. The portable information terminal 9102 has a display It has a function of displaying information on three or more sides of the unit 9001. Here, an example is shown where the information 9052, the information 9 053, and the information 9054 are displayed on different sides respectively. For example, the user , with the portable information terminal 9102 stored in the breast pocket of the clothing, can also check the information 9053 displayed at a position where it can be observed from above the portable information terminal 9102. The user can check the display without taking out the portable information terminal 9102 from the pocket, and for example, can determine whether to answer a call.

[0301] FIG. 15C is a perspective view showing a wristwatch-type portable information terminal 9200. The portable information terminal 920 0 can be used, for example, as a smartwatch. Also, the display unit 9001 has its display surface provided in a curved shape, and can perform display along the curved display surface. Also, the portable information terminal 9200 can communicate with, for example, a wirelessly communicable headset to make a hands-free call. Also, the portable information terminal 9200 can perform data transmission with other information terminals and charging through the connection terminal 90 06. Note that the charging operation may be performed by wireless power supply.

[0302] FIGS. 15D, 15E, and (F) are perspective views showing a foldable portable information terminal 9201. Also, FIG. 15D shows the state where the portable information terminal 9201 is unfolded, FIG. 15F shows the folded state , and FIG. 15E is a perspective view of the state in the middle of changing from one of FIGS. 15D and 15F to the other. The portable information terminal 9201 has excellent portability in the folded state and excellent display comprehensibility due to a wide display area without seams in the unfolded state. The display unit 9 001 of the portable information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example ​ For example, the display unit 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less. .

[0303] This embodiment can be appropriately combined with other embodiments and examples.

Example

[0304] In this example, the imaging range of one pixel included in the display device according to one aspect of the present invention will be described with reference to FIGS. 16 to 18.

[0305] The components used in the calculation in this example and their positional relationships will be described with reference to FIGS. 16A and 16B. .

[0306] As shown in FIGS. 16A and 16B, a light-shielding layer BM is provided on a substrate SUB. A light-receiving element PD is provided so as to be separated from the substrate SUB and the light-shielding layer BM. The light-shielding layer BM has an opening , and the light-receiving element PD overlaps with the opening.

[0307] The configuration shown in FIG. 16B is different from the configuration shown in FIG. 16A in that a lens LE is provided on the substrate SUB. The lens LE overlaps with the opening of the light-shielding layer BM and the light-receiving element PD.

[0308] In this example, assuming that the light-receiving element PD is used as a fingerprint sensor or the like, it is assumed that the subject is in contact with the surface of the substrate S UB.

[0309] In this example, calculations were performed using the size d of the light-receiving element PD, the imaging range D of the light-receiving element PD, the distance L1 between the pinhole and the subject, the distance L2 between the light-receiving element PD and the pinhole, and the diameter p of the pinhole, as shown in FIGS. 16A and 16B. Note that the distance L1 is the light of the substrate SUB Corresponds to the path length. Also, the distance L1 in FIG. 16B is the distance between the lens LE and the subject. It can also be said so. Also, the diameter p of the pinhole corresponds to the diameter of the opening of the light shielding layer BM.

[0310] First, using the configuration shown in FIG. 16A, the relationship between the diameter p of the pinhole and the imaging range D of the light receiving element PD was obtained by calculation. was obtained by calculation.

[0311] The conditions used in the calculation were determined assuming that a light receiving element was mounted on a flexible OLED panel in a method of separately coating the light emitting layer for each color. was determined assuming that a light receiving element was mounted on a flexible OLED panel in a method of separately coating the light emitting layer for each color.

[0312] Specifically, the fineness was 254 ppi, the pixel size was 100 μm□, the size of the light receiving element PD d was 14 μm□, and the distance L2 was 30 μm. Also, one pixel has a sub-pixel of red (R) , a sub-pixel of green (G), a sub-pixel of blue (B), and a sub-pixel having a light receiving element PD. It was assumed. The total aperture ratio of the RGB sub-pixels was 10.1%, the aperture ratio of the sub-pixel having the light receiving element PD was 2.0%, and the aperture ratio of one pixel was 12.1%.

[0313] FIG. 17 shows the relationship between the diameter p of the pinhole obtained by calculation and the imaging range D of the light receiving element PD. In FIG. 17, the results of five conditions (distance L1 = 100 μ m, 200 μm, 500 μm, 1000 μm, and 2000 μm) with different values of the distance L1 are shown.

[0314] As described above, since the calculation was performed under the condition of a pixel size of 100 μm□, when the imaging range D of the light receiving element PD is 100 μm or less, it can be said that the imaging range of one light receiving element PD fits within the area of one pixel. On the other hand, when the imaging range D of the light receiving element PD exceeds 100 μm, adjacent light receiving elements Since it overlaps with the imaging range D of the PD, the image obtained by imaging becomes blurred.

[0315] From FIG. 17, it was found that there are conditions for the diameter p of the pinhole that can confine the imaging range D of the light-receiving element PD to an area of one pixel under the conditions where the distance L1 is 100 μm and 200 μm. Also, under the condition that the distance L1 is 500 μm or more, it was found that even with the condition of a diameter p ≒ 0 μm, the imaging range D of the light-receiving element PD becomes wider than the area of one pixel.

[0316] Note that even under the conditions and configurations where the imaging ranges D of adjacent light-receiving elements PD overlap, a clearer image can be obtained by performing image processing to reduce image blurring after imaging. On the other hand if the imaging range D of the light-receiving element PD can be confined to an area of one pixel, the image processing becomes unnecessary, which is preferable.

[0317] Also, as described above, since the distance L1 corresponds to the optical path length of the substrate SUB, to shorten the distance L1 it is necessary to make the substrate SUB thinner. Therefore, the strength and bending resistance of the flexible OLED panel may decrease.

[0318] Therefore, calculations were performed to determine whether the range of the distance L1 within which the imaging range D of the light-receiving element PD can be confined to an area of one pixel can be expanded by using the lens LE.

[0319] Specifically, using the configuration shown in FIG. 16B, the relationship between the imaging range D of the light-receiving element PD and the distance L1 between the pinhole and the subject was obtained by calculation.

[0320]

[0321] The conditions used in the calculation were the same as above. The diameter p of the pinhole was set to 14 μm.

[0321] Fig. 18 shows the imaging range D of the light receiving element PD obtained by calculation and the relationship with the distance L1 between the pinhole and the subject.

[0322] From Fig. 18, when the distance L1 is 215 μm or less, the imaging range D of the light receiving element PD is 100 μm or less, and it was found that the imaging range D can be contained in an area of one pixel.

[0323] On the other hand, from Fig. 17, when the lens LE is not used, under the conditions of a diameter p = 14 μm and a distance L1 = 100 μ m, the imaging range D can be contained in an area of one pixel, but under the conditions of a diameter p = 14 μm and a distance L1 = 200 μm, it can be seen that the imaging range D of the light receiving element PD is wider than 100 μm. That is, from the results of Figs. 17 and 18, it was found that by using the lens LE, the range of the distance L1 in which the imaging

[0324] range D of the light receiving element PD can be contained in an area of one pixel has become wider. Specifically, when the diameter p of the pinhole is the same, by using the lens LE, compared with the case where the lens L E is not used, it was found that even if the distance L1 is increased, the imaging range D can be contained in an area of one pixel. That is, the longer the distance L1 can be, the thicker the substrate SUB can be. For example, not only can the thickness of the substrate itself be increased, but at least one of an antistatic film, a water repellent film, a hard coat film, and a shock absorbing layer can be added and arranged on the substrate. Therefore, the strength, bend resistance, and reliability of the flexible OLED panel

[0325] can be improved.

[0326] As described above, from the results of this embodiment, regardless of the presence or absence of the lens LE, the imaging of the light receiving element PD ​​It was confirmed that there is a condition under which the range D can be contained in a region of one pixel. Also, it was found that providing the lens LE can widen the said condition. For example, since the thickness of the substrate SUB can be increased, it was suggested that the strength, bend resistance, and reliability of the flexible OLED panel can be enhanced. By providing the lens LE, it was found that the said condition can be widened. For example, since the thickness of the substrate SUB can be increased, it was suggested that the strength, bend resistance, and reliability of the flexible OLED panel can be enhanced. Since the thickness of the substrate SUB can be increased, it was suggested that the strength, bend resistance, and reliability of the flexible OLED panel can be enhanced. Since the thickness of the substrate SUB can be increased, it was suggested that the strength, bend resistance, and reliability of the flexible OLED panel can be enhanced.

Example

[0327] In this example, a light-receiving element was fabricated, and the results of imaging performed by using the said light-receiving element as an image sensor will be described. The results of imaging performed by using the said light-receiving element as an image sensor will be described.

[0328] The light-receiving element 1 of this example has a stacked structure that aims for commonality of structure with the light-emitting element and can be fabricated by replacing the light-emitting layer of the light-emitting element with the active layer of the light-receiving element. The comparative light-receiving element 2 has a stacked structure suitable for an image sensor and does not aim for commonality of structure with the light-emitting element. The light-receiving element 1 of this example has a stacked structure that aims for commonality of structure with the light-emitting element and can be fabricated by replacing the light-emitting layer of the light-emitting element with the active layer of the light-receiving element. The comparative light-receiving element 2 has a stacked structure suitable for an image sensor and does not aim for commonality of structure with the light-emitting element. The comparative light-receiving element 2 has a stacked structure suitable for an image sensor and does not aim for commonality of structure with the light-emitting element. The comparative light-receiving element 2 has a stacked structure suitable for an image sensor and does not aim for commonality of structure with the light-emitting element.

[0329] The chemical formulas of the materials used in this example are shown below.

[0330]

Chemical formula

[0331] The element structure of the light-receiving element of this example is shown in Table 1. Also, using Table 1, the light-receiving element 1 and the comparative light-receiving element 2 will be described. Using Table 1, the light-receiving element 1 and the comparative light-receiving element 2 will be described.

[0332]

Table 1

[0333] [Light-receiving element 1] As shown in Table 1, in the light-receiving element 1, as the first electrode, a titanium film with a thickness of about 50 nm, a thickness A three-layer structure of an aluminum film with a thickness of about 200 nm and a titanium film with a thickness of about 5 nm was used.

[0334] The first buffer layer of the light-receiving element 1 is a layer corresponding to the hole injection layer and the hole transport layer of the light-emitting element. There is.

[0335] First, a layer corresponding to the hole injection layer is formed by co-evaporating 3-[4-(9-phenanthryl)phenyl]-9 -phenyl-9H-carbazole (abbreviation: PCPPn) and molybdenum oxide in a weight ratio such that PCPPn:molybdenum oxide = 2:1. The thickness of the layer corresponding to the hole injection layer was formed to be about 15 nm.

[0336] Next, a layer corresponding to the hole transport layer is formed by using N-(1,1'-biphenyl-4-yl)-N-[4 -(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9 H-fluorene-2-amine (abbreviation: PCBBiF) and depositing it to a thickness of 60 nm. Thereby deposited.

[0337] The active layer of the light-receiving element 1 is formed by co-evaporating fullerene (C 70 ) and tetraphenyldibenzoperiflanthene (abbreviation: DBP) in a weight ratio of C 70 :DBP = 9:1. The thickness of the active layer was formed to be about 60 nm. Thereby formed.

[0338] The second buffer layer of the light-receiving element 1 is a layer corresponding to the electron transport layer and the electron injection layer of the light-emitting element. There is.

[0339] First, a layer corresponding to the electron transport layer is formed by using 2-[3'-(dibenzothiophen-4-yl)bip enyl-3-yl]dibenz[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-I The thickness of (I) is 10 nm, 2,9-bis(naphthalen-2-yl)-4,7-diphenyl- 1,10-phenanthroline (abbreviation: NBPhen) was sequentially deposited so that the thickness became 10 nm. It was formed by evaporation.

[0340] Next, a layer corresponding to the electron injection layer was formed by depositing lithium fluoride (LiF) so that the thickness became 1 nm. It was formed by evaporation.

[0341] The second electrode of the light-receiving element 1 was formed by co-evaporating silver (Ag) and magnesium (Mg) at a volume ratio of 10:1 so that the thickness became 9 nm, and then indium tin oxide (ITO) was formed by sputtering so that the thickness became 70 nm. Thereafter, indium tin oxide (ITO) was formed by sputtering so that the thickness became 70 nm. It was formed by sputtering so that the thickness became 70 nm.

[0342] Thus, the light-receiving element 1 was fabricated.

[0343] [Comparative light-receiving element 2] As shown in Table 1, for the comparative light-receiving element 2, as the first electrode, a three-layer structure of a titanium film with a thickness of about 50 nm, an aluminum film with a thickness of about 200 nm, and a titanium film with a thickness of about 5 nm was used. A three-layer structure of a titanium film with a thickness of about 50 nm, an aluminum film with a thickness of about 200 nm, and a titanium film with a thickness of about 5 nm was used.

[0344] The first buffer layer of the comparative light-receiving element 2 was deposited using fullerene (C 70 ) so that the thickness became about 10 n m.

[0345] The active layer of the comparative light-receiving element 2 is the same as that of the light-receiving element 1, and was formed by co-evaporating fullerene (C 70 ) and DBP so that the weight ratio of C 70 :DBP = 9:1. The thickness of the active layer was formed to be about 60 nm.

[0346] The second buffer layer of the comparative light-receiving element 2 was formed using molybdenum oxide so that the thickness became about 60 nm. It was vapor-deposited as described above.

[0347] The second electrode of the comparison light-receiving element 2 was formed by sputtering ITO to a thickness of about 70 nm. so as to be.

[0348] Thus, the comparison light-receiving element 2 was fabricated.

[0349] [Current-Irradiated Light Intensity Characteristics of Light-Receiving Element 1] Fig. 19 shows the results of evaluating the current-irradiated light intensity characteristics of the light-receiving element 1. In Fig. 19, the vertical axis represents the current (A), and the horizontal axis represents the irradiated light intensity (W / cm 2 ).

[0350] The light-receiving area of the light-receiving element 1 was 2 mm × 2 mm.

[0351] With a voltage of -2 V applied to the light-receiving element 1, light with a wavelength λ = 550 nm was irradiated under the conditions of 1 μW / cm 2 to 40 μW / cm 2 , and the current amount was measured. The voltage applied here (- 2 V) is usually the value when the bias applied to the EL element is positive. That is, the case where the first electrode side is at a high potential and the second electrode side is at a low potential is positive.

[0352] It was confirmed from Fig. 19 that the current amount changes linearly with respect to the irradiated light intensity. From this , it was suggested that the image sensor using the light-receiving element 1 operates normally.

[0353] [Imaging Results] Next, an image sensor chip was fabricated using each of the light-receiving element 1 and the comparison light-receiving element 2, and still images were captured.

[0354] The imaging results of the image sensor chip using the light-receiving element 1 are shown in Figs. 20A and 20B. Fig. 20A is the data before correction. Also, the image sensor chip using the light receiving element 1 Using all-white and all-black images captured in advance, the gradation and pixel The unevenness between the images was corrected. Figure 20B shows the corrected data.

[0355] The imaging results of the image sensor chip using the comparative light receiving element 2 are shown in Figs. 20C and 20D. FIG. 20C shows the data before correction. Using all-white and all-black images captured in advance by the camera, the gradation of the data before correction was Also, unevenness between pixels was corrected. Figure 20D shows the data after correction.

[0356] As shown in FIG. 20A to FIG. 20D, an image sensor chip using a light receiving element 1 and a comparative light receiving element In either case, the image sensor chip using the optical element 2 can capture still images satisfactorily. In other words, the light receiving element 1, which has a structure common to the light emitting element, was used to The image sensor has a laminated structure suitable for the comparison of the photodetector 2, and the image sensor has the same imaging results as the comparison of the photodetector 2. It was possible to do so.

[0357] As described above, in this embodiment, a light receiving element having a structure common to a light emitting element is used. We were able to create an image sensor that can capture good images. EXAMPLES

[0358] In this embodiment, a display device having a light receiving element and a light emitting element in a display portion is manufactured. He explains.

[0359] [Cross-sectional structure] FIG. 21 shows a device structure constituting a pixel of a display device.

[0360] One pixel of the display device manufactured in this embodiment includes a total of four elements: organic EL elements OLED in three colors of Red (R), Green (G), and Blue (B), and one organic photodiode OPD, and circuits (driving circuits 43 and 44) for driving these four elements independently. The four elements are respectively provided on a substrate 151 (glass substrate). Further, on the substrate 151, a driving circuit 43 electrically connected to the pixel electrode 111 of the organic photodiode OPD and a driving circuit 44 electrically connected to the pixel electrode 191 of the organic EL element OLED are provided. The organic photodiode OPD is configured to detect light incident from the counter substrate side. The organic EL element OLED has a top emission structure that emits light toward the counter substrate side (the common electrode 115 side in FIG. 21). The pixel electrode 111 and the pixel electrode 191 have a function of reflecting visible light. The four elements each have a separately formed hole transport layer. Further, the light emitting layer of each color organic EL element OLED and the active layer of the organic photodiode OPD are separately formed. Specifically, the organic photodiode OPD has a hole transport layer 186 and an active layer 113. The red organic EL element OLED has a hole transport layer 196R and a light emitting layer 193R. The green organic EL element OLED has a hole transport layer 196G and a light emitting layer 193G. The blue organic EL element OLED has a hole transport layer 196B and a light emitting layer 193B. The common layers 112, 114a, 114b, and the common electrode 115 have a common configuration for the four elements.

[0361] One pixel of the display device fabricated in this embodiment consists of a total of four elements: organic EL elements OLED in three colors of Red (R), Green (G), and Blue (B), and one organic photodiode OPD, along with circuits (driving circuits 43 and 44) for driving these four elements independently. The four elements are each provided on a substrate 151 (glass substrate). Additionally, on the substrate 151, a driving circuit 43 electrically connected to the pixel electrode 111 of the organic photodiode OPD and a driving circuit 44 electrically connected to the pixel electrode 191 of the organic EL element OLED are provided. The organic photodiode OPD is configured to detect light incident from the counter substrate side. The organic EL element OLED has a top emission structure that emits light toward the counter substrate side (the common electrode 115 side in FIG. 21). The pixel electrode 111 and the pixel electrode 191 have the function of reflecting visible light. The four elements each have a separately formed hole transport layer. Moreover, the light emitting layer of each color organic EL element OLED and the active layer of the organic photodiode OPD are separately formed. Specifically, the organic photodiode OPD has a hole transport layer 186 and an active layer 113. The red organic EL element OLED has a hole transport layer 196R and a light emitting layer 193R. The green organic EL element OLED has a hole transport layer 196G and a light emitting layer 193G. The blue organic EL element OLED has a hole transport layer 196B and a light emitting layer 193B. The common layers 112, 114a, 114b, and the common electrode 115 have a common configuration for the four elements. One pixel of the display device made in this embodiment contains a total of four elements: organic EL elements OLED in three colors of Red (R), Green (G), and Blue (B), and one organic photodiode OPD, as well as circuits (driving circuits 43 and 44) for driving these four elements independently. The four elements are each provided on a substrate 151 (glass substrate). Furthermore, on the substrate 151, a driving circuit 43 electrically connected to the pixel electrode 111 of the organic photodiode OPD and a driving circuit 44 electrically connected to the pixel electrode 191 of the organic EL element OLED are provided. The organic photodiode OPD is configured to detect light incident from the counter substrate side. The organic EL element OLED has a top emission structure that emits light toward the counter substrate side (the common electrode 115 side in FIG. 21). The pixel electrode 111 and the pixel electrode 191 have the function of reflecting visible light. The four elements each have a separately formed hole transport layer. Also, the light emitting layer of each color organic EL element OLED and the active layer of the organic photodiode OPD are separately formed. Specifically, the organic photodiode OPD has a hole transport layer 186 and an active layer 113. The red organic EL element OLED has a hole transport layer 196R and a light emitting layer 193R. The green organic EL element OLED has a hole transport layer 196G and a light emitting layer 193G. The blue organic EL element OLED has a hole transport layer 196B and a light emitting layer 193B.

[0362] The four elements each have a separately formed hole transport layer. Moreover, the light emitting layer of each color organic EL element OLED and the active layer of the organic photodiode OPD are separately formed. Specifically, the organic photodiode OPD has a hole transport layer 186 and an active layer 113. The red organic EL element OLED has a hole transport layer 196R and a light emitting layer 193R. The green organic EL element OLED has a hole transport layer 196G and a light emitting layer 193G. The blue organic EL element OLED has a hole transport layer 196B and a light emitting layer 193B. The common layers 112, 114a, 114b, and the common electrode 115 have a common configuration for the four elements. One pixel of the display device produced in this embodiment is composed of a total of four elements: organic EL elements OLED in three colors of Red (R), Green (G), and Blue (B), and one organic photodiode OPD, along with circuits (driving circuits 43 and 44) for driving these four elements independently. The four elements are each provided on a substrate 151 (glass substrate). Additionally, on the substrate 151, a driving circuit 43 electrically connected to the pixel electrode 111 of the organic photodiode OPD and a driving circuit 44 electrically connected to the pixel electrode 191 of the organic EL element OLED are provided. The organic photodiode OPD is configured to detect light incident from the counter substrate side. The organic EL element OLED has a top emission structure that emits light toward the counter substrate side (the common electrode 115 side in FIG. 21). The pixel electrode 111 and the pixel electrode 191 have the function of reflecting visible light. The four elements each have a separately formed hole transport layer. Moreover, the light emitting layer of each color organic EL element OLED and the active layer of the organic photodiode OPD are separately formed. Specifically, the organic photodiode OPD has a hole transport layer 186 and an active layer 113. The red organic EL element OLED has a hole transport layer 196R and a light emitting layer 193R. The green organic EL element OLED has a hole transport layer 196G and a light emitting layer 193G. The blue organic EL element OLED has a hole transport layer 196B and a light emitting layer 193B. The common layers 112, 114a, 114b, and the common electrode 115 have a common configuration for the four elements.

[0363] One pixel of the display device fabricated in this embodiment consists of a total of four elements: organic EL elements OLED in three colors of Red (R), Green (G), and Blue (B), and one organic photodiode OPD, along with circuits (driving circuits 43 and 44) for driving these four elements independently. Yes, and it is formed using a common mask. In this embodiment, the common layer 112 is a hole injection layer, the common layer 114a is an electron transport layer, and the common layer 114b is an electron injection layer. The common electrode 115 has a function of transmitting visible light and a function of reflecting visible light.

[0364] In this way, by simply changing the configuration from making three types of light-emitting elements for R, G, and B to making four types including the organic photodiode OPD, a photosensor can be formed over the entire surface of the display section of the organic EL display. Compared with the case of incorporating the photosensor as a separate module, the configuration of the display device of this embodiment is excellent in terms of process, cost, and designability, and is easy to miniaturize and flexibilize. The imaging method in the display device of this embodiment will be described with reference to FIG. 1C.

[0365] The imaging by the display device of this embodiment is performed by using the light emitted from the organic EL element OLED as a light source and detecting the reflected light from the object to be imaged with the organic photodiode OPD. When imaging the fingerprint of the finger 52 in contact with the substrate 59 (opposing substrate) as shown in FIG. 1C,

[0366] the light emitted from the organic EL element OLED is reflected by the finger 52 on the substrate 59, and the organic photodiode OPD detects the reflected light. At this time, by utilizing the difference in reflectance of the unevenness of the fingerprint, the fingerprint can be imaged.

[0367] In addition, in the display device of this embodiment, a black resin layer is provided on the opposing substrate. The black resin layer corresponds to the light-shielding layer BM shown in FIG. 2A. By providing the black resin layer, the light emitted from the organic EL element OLED is reflected within the display device, and the reflected light directly reaches the organic photodiode OPD.​ It can be suppressed from being incident. Further, the black resin layer is also used for adjusting the range in which the organic photodiode (OPD) captures an image. By setting the diameter of the opening of the black resin layer according to the target imaging range, it is possible to suppress blurring of the captured image. The imaging of fingerprints can be detected only with monochromatic light and does not need to be color imaging. However, the display device of this embodiment can also perform color imaging by sequentially emitting light from the R, G, and B organic EL elements and detecting the respective reflected lights in a time-division manner. For example, a color image is arranged on the counter substrate, and the color image can be scanned in color. When this method is used, it is only necessary to arrange an organic photodiode (OPD) having sensitivity to the entire visible light region, and it is not necessary to arrange individual organic photodiodes (OPD) for R, G, and B, which is advantageous for high definition.

[0368] The imaging of fingerprints can be detected only with monochromatic light and does not need to be color imaging. However, the display device of this embodiment can also perform color imaging by sequentially emitting light from the R, G, and B organic EL elements and detecting the respective reflected lights in a time-division manner. For example, a color image is arranged on the counter substrate, and the color image can be scanned in color. When this method is used, it is only necessary to arrange an organic photodiode (OPD) having sensitivity to the entire visible light region, and it is not necessary to arrange individual organic photodiodes (OPD) for R, G, and B, which is advantageous for high definition. The imaging of fingerprints can be detected only with monochromatic light and does not need to be color imaging. However, the display device of this embodiment can also perform color imaging by sequentially emitting light from the R, G, and B organic EL elements and detecting the respective reflected lights in a time-division manner. For example, a color image is arranged on the counter substrate, and the color image can be scanned in color. When this method is used, it is only necessary to arrange an organic photodiode (OPD) having sensitivity to the entire visible light region, and it is not necessary to arrange individual organic photodiodes (OPD) for R, G, and B, which is advantageous for high definition. The imaging of fingerprints can be detected only with monochromatic light and does not need to be color imaging. However, the display device of this embodiment can also perform color imaging by sequentially emitting light from the R, G, and B organic EL elements and detecting the respective reflected lights in a time-division manner. For example, a color image is arranged on the counter substrate, and the color image can be scanned in color. When this method is used, it is only necessary to arrange an organic photodiode (OPD) having sensitivity to the entire visible light region, and it is not necessary to arrange individual organic photodiodes (OPD) for R, G, and B, which is advantageous for high definition. The imaging of fingerprints can be detected only with monochromatic light and does not need to be color imaging. However, the display device of this embodiment can also perform color imaging by sequentially emitting light from the R, G, and B organic EL elements and detecting the respective reflected lights in a time-division manner. For example, a color image is arranged on the counter substrate, and the color image can be scanned in color. When this method is used, it is only necessary to arrange an organic photodiode (OPD) having sensitivity to the entire visible light region, and it is not necessary to arrange individual organic photodiodes (OPD) for R, G, and B, which is advantageous for high definition. The imaging of fingerprints can be detected only with monochromatic light and does not need to be color imaging. However, the display device of this embodiment can also perform color imaging by sequentially emitting light from the R, G, and B organic EL elements and detecting the respective reflected lights in a time-division manner. For example, a color image is arranged on the counter substrate, and the color image can be scanned in color. When this method is used, it is only necessary to arrange an organic photodiode (OPD) having sensitivity to the entire visible light region, and it is not necessary to arrange individual organic photodiodes (OPD) for R, G, and B, which is advantageous for high definition. The imaging of fingerprints can be detected only with monochromatic light and does not need to be color imaging. However, the display device of this embodiment can also perform color imaging by sequentially emitting light from the R, G, and B organic EL elements and detecting the respective reflected lights in a time-division manner. For example, a color image is arranged on the counter substrate, and the color image can be scanned in color. When this method is used, it is only necessary to arrange an organic photodiode (OPD) having sensitivity to the entire visible light region, and it is not necessary to arrange individual organic photodiodes (OPD) for R, G, and B, which is advantageous for high definition.

[0369] [Consideration of Light-Receiving Element] As described above, in the display device of this embodiment, the common electrode 115, which is the upper electrode, has a function of transmitting visible light and a function of reflecting visible light, and a microcavity structure is applied to both the organic EL element (OLED) and the organic photodiode (OPD). As a result, the color purity of the organic EL element (OLED) can be improved, and in the organic photodiode (OPD), the width of the wavelength to be sensed becomes narrower. As described above, in the display device of this embodiment, the common electrode 115, which is the upper electrode, has a function of transmitting visible light and a function of reflecting visible light, and a microcavity structure is applied to both the organic EL element (OLED) and the organic photodiode (OPD). As a result, the color purity of the organic EL element (OLED) can be improved, and in the organic photodiode (OPD), the width of the wavelength to be sensed becomes narrower. As described above, in the display device of this embodiment, the common electrode 115, which is the upper electrode, has a function of transmitting visible light and a function of reflecting visible light, and a microcavity structure is applied to both the organic EL element (OLED) and the organic photodiode (OPD). As a result, the color purity of the organic EL element (OLED) can be improved, and in the organic photodiode (OPD), the width of the wavelength to be sensed becomes narrower. As described above, in the display device of this embodiment, the common electrode 115, which is the upper electrode, has a function of transmitting visible light and a function of reflecting visible light, and a microcavity structure is applied to both the organic EL element (OLED) and the organic photodiode (OPD). As a result, the color purity of the organic EL element (OLED) can be improved, and in the organic photodiode (OPD), the width of the wavelength to be sensed becomes narrower. As described above, in the display device of this embodiment, the common electrode 115, which is the upper electrode, has a function of transmitting visible light and a function of reflecting visible light, and a microcavity structure is applied to both the organic EL element (OLED) and the organic photodiode (OPD). As a result, the color purity of the organic EL element (OLED) can be improved, and in the organic photodiode (OPD), the width of the wavelength to be sensed becomes narrower.

[0370] Fig. 22 shows the relationship between the wavelength dependence of the spectral sensitivity and the film thickness of the hole transport layer in a light-receiving element to which the same configuration as the organic photodiode (OPD) adopted in the display device of this embodiment is applied. Fig. 22 also shows the normalized absorption spectrum of the light-receiving element. In Fig. 22, Fig. 22 shows the relationship between the wavelength dependence of the spectral sensitivity and the film thickness of the hole transport layer in a light-receiving element to which the same configuration as the organic photodiode (OPD) adopted in the display device of this embodiment is applied. Fig. 22 also shows the normalized absorption spectrum of the light-receiving element. In Fig. 22, Fig. 22 shows the relationship between the wavelength dependence of the spectral sensitivity and the film thickness of the hole transport layer in a light-receiving element to which the same configuration as the organic photodiode (OPD) adopted in the display device of this embodiment is applied. Fig. 22 also shows the normalized absorption spectrum of the light-receiving element. In Fig. 22, The first vertical axis is spectral sensitivity (in arbitrary units), the second vertical axis is the absorption spectrum (in arbitrary units), and the horizontal axis is wavelength (unit: nm).

[0371] Note that the material of the light-receiving element in this example is the same as that of the light-receiving element 1 (Table 1) in Example 2, except that the pixel electrode 111 uses a laminated structure of an alloy (Ag-Pd-Cu (APC)) film of silver (Ag), palladium (Pd ) and copper (Cu) and indium tin oxide (ITSO) film, and PCPPn is used for the hole transport layer.

[0372] As shown in FIG. 22, the absorption band of the light-receiving element exists throughout the visible light region, and it was found that the absorbance decreases as the wavelength increases in the red region. On the other hand, the spectral sensitivity of the light-receiving element has a peak, and it was found that the peak shifts depending on the film thickness of the hole transport layer. From this, it was confirmed that it is necessary to appropriately adjust the film thickness of the hole transport layer of the organic photodiode OPD for the wavelength region to be sensed.

[0373] In this example, a green organic EL element OLED is emitted to image a fingerprint. Therefore , an organic photodiode OPD with a film thickness of 40 nm of the hole transport layer that can widely cover from blue to red with green (wavelength of about 550 nm) as the center was adopted for the display device of this example.

[0374] FIG. 23 shows the relationship between the incident light intensity and the photocurrent when a monochromatic light with a wavelength of 550 n m is irradiated on an organic photodiode OPD with a film thickness of 40 nm of the hole transport layer. In FIG. 23, the vertical axis is the current density (unit: μA / cm 2 ), and the horizontal axis is the incident light intensity (unit: μW / cm 2 ).

[0375] ​​​​​​As shown in Fig. 23, when the applied voltage is -2V or less, the linear relationship between the incident light intensity and the photocurrent was confirmed. In particular, when the voltage is -3V or more and -6V or less, it was confirmed that the voltage dependence is small and there is a saturation region.

[0376] When scanning an image, sensing in analog gradation is required. Also, when scanning a color image, it is required to have a wide wavelength range that can be sensed. Therefore, it is necessary to have linearity between the incident light intensity and the photocurrent and a wide saturation region for a wide wavelength range. From Figs. 22 and 23, it was confirmed that the organic photodiode OPD, which shares a part of the device structure with the organic EL element OLED, satisfies the above requirements and can operate without problems as an optical sensor.

[0377] [Configuration of the display device] In this embodiment, an active matrix type display device with a screen size of 3.07 inches diagonal, a pixel number of 360 (H) × 540 (V), a pixel pitch of 120 μm × 120 μm, and a fineness of 212 ppi was fabricated. The gate driver is built-in, and the source driver is externally attached and mounted by the COG method. The readout circuit outputs analog voltages sequentially.

[0378] The display device of this embodiment uses a transistor using an oxide semiconductor as the semiconductor layer as a switching element. The transistor using CAAC-OS as the semiconductor layer has the characteristic that the off-current is very small. Due to this characteristic, in terms of sensing, there is an advantage that imaging in the global shutter method becomes possible. Also, in a still image, the number of rewrite times of the image can be reduced, enabling driving (IDS driving) that leads to low power consumption.

[0379] Note that IDS driving is an idling stop drive that operates at a frame frequency lower than normal. In IDS driving, after executing the writing process of image data, the rewriting of the image data is stopped. Once the image data is written, and then by extending the interval until the writing of the next image data, the power consumption required for writing the image data during that period can be reduced. The frame frequency of IDS driving can be, for example, 1 / 100 or more and 1 / 10 or less of the normal operation (typically 60 Hz or more and 240 Hz or less). A still image has the same video signal between consecutive frames. Therefore, the IDS driving mode is particularly effective when displaying a still image.

[0380] Normally, the image rewriting operation becomes noise for the sensor, thus reducing the signal-to-noise ratio. However, in the case of IDS driving, during sensing, the image rewriting operation can be stopped while the image is held. Therefore, sensing can be performed without being affected by the noise caused by image rewriting, and a decrease in the signal-to-noise ratio can be suppressed.

[0381] In the display device of this embodiment, one frame is divided into a display period and a sensing period. During the sensing period, by using IDS driving, image rewriting is not performed, and the noise during sensing is reduced. Also, for fingerprint authentication and image scanning, since the light emitted by the organic EL element OLED is used as a light source, it is necessary to keep the luminance of the light emitted by the organic EL element OLED constant. In this case as well, by adopting IDS driving, noise can be reduced, and good sensing can be performed.

[0382] [Display result] FIG. 24 shows the display result of the display device of this embodiment. As shown in FIG. 24, in the display unit, light reception In a display device having an element and a light-emitting element, it was confirmed that an image can be displayed well .

[0383] [Imaging result] FIG. 25 shows the result of imaging the light emitted from the organic EL element OLED as a light source using the organic photodiode OPD in the display device of this embodiment. Note that image correction was performed on the acquired imaging image using the detection values of white display and black display measured in advance as reference values. Also, at the time of image correction, for portions where the detection value of the imaging image shows a value significantly deviated from the reference value it was corrected to the value of black display.

[0384] FIG. 25 is the result of printing an image on paper, placing the printed surface of the paper facing the display device side, placing the paper on the display device, and imaging. The exposure time was 1.78 msec and the readout time was 248 msec. Color imaging was performed by RGB time division. As shown in FIG. 25, it was confirmed that a color image can be imaged well using the display device of this embodiment. Also, when a finger was placed on the display device and the green organic EL element OLED was made to emit light to image the fingerprint, it was possible to image well the pattern caused by the unevenness of the fingerprint. From this

[0385] it was confirmed that imaging with a resolution comparable to that of a fingerprint can be performed using the display device of this embodiment.

Description of reference numerals

[0386] C1: Capacitor element, C2: Capacitor element, EL: Light-emitting element, IR: Light-emitting element, L1: Distance, L2 : Distance, LE: Lens, M1: Transistor, M2: Transistor, M3: Transistor , M4: Transistor, M5: Transistor, M6: Transistor, M7: Transistor , OLED: Organic EL element, OPD: Organic photodiode, OUT1: Wiring, OUT2 : Wiring, PD: Light-receiving element, PIX1: Pixel circuit, PIX2: Pixel circuit, SUB: Substrate, V 1: Wiring, V2: Wiring, V3: Wiring, V4: Wiring, V5: Wiring, 10A: Display device, 10 B: Display device, 10C: Display device, 10D: Display device, 10E: Display device, 10F: Display device, 10G: Display device, 10H: Display device, 10J: Display device, 10K: Display device, 1 0L: Display device, 10M: Display device, 21: Light emission, 22: Light, 23a: Light, 23b: Reflection light, 23c: Light, 23d: Reflected light, 41: Transistor, 42: Transistor, 43: Drive circuit, 44: Drive circuit, 50A: Display device, 50B: Display device, 51: Substrate, 52: Finger , 53: Layer having a light-receiving element, 55: Layer having a transistor, 57: Layer having a light-emitting element , 59: Substrate, 100A: Display device, 100B: Display device, 100C: Display device, 10 0D: Display device, 110: Light-receiving element, 111: Pixel electrode, 112: Common layer, 113: Active layer, 114: Common layer, 114a: Common layer, 114b: Common layer, 115: Common electrode, 142 : Adhesive layer, 143: Space, 146: Lens array, 147: Color layer, 148: Color layer, 1 48a: Color layer, 148b: Color layer, 148c: Color layer, 149: Lens, 151: Substrate , 152: Substrate, 153: Substrate, 154: Substrate, 155: Adhesive layer, 162: Display section, 16 4: Circuit, 165: Wiring, 166: Conductive layer, 172: FPC, 173: IC, 182: Barrier layer, 184: Barrier layer, 186: Hole transport layer, 190: Light-emitting element, 191: Pixel electrode, 192: Barrier layer, 193: Light-emitting layer, 193B: Light-emitting layer, 193G: Light-emitting layer, 1 93R: Light-emitting layer, 194: Buffer layer, 195: Protection layer, 195a: Inorganic insulating layer, 195 b: Organic insulating layer, 195c: Inorganic insulating layer, 196B: Hole transport layer, 196G: Hole transport layer , 196R: Hole transport layer, 201: Transistor, 204: Connection part, 205: Trans istor, 206: Transistor, 208: Transistor, 209: Transistor, 210: Trans istor, 211: Insulating layer, 212: Insulating layer, 213: Insulating layer, 214: Insulating layer, 21 5: Insulating layer, 216: Partition wall, 217: Partition wall, 218: Insulating layer, 221: Conductive layer, 222a : Conductive layer, 222b: Conductive layer, 223: Conductive layer, 225: Insulating layer, 228: Region, 231 : Semiconductor layer, 231i: Channel formation region, 231n: Low-resistance region, 242: Connection layer, 6 500: Electronic device, 6501: Housing, 6502: Display unit, 6503: Power button, 650 4: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 6510: Protection member, 6511: Display panel, 6512: Optical member, 6513: Tact ile sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 651 8: Battery, 7000: Display unit, 7100: Television device, 7101: Housing, 71 03: Stand, 7111: Remote control operation unit, 7200: Notebook personal computer ter, 7211: Housing, 7212: Keyboard, 7213: Pointing device, 72 14: External connection port, 7300: Digital signage, 7301: Housing, 7303: S peaker, 7311: Information terminal device, 7400: Digital signage, 7401: Column, 741 1: Information terminal device, 9000: Housing, 9001: Display unit, 9003: Speaker, 9005: Operation key, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 905 0: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9 055: Hinge, 9101: Portable information terminal, 9102: Portable information terminal, 9200: Portable infor mation terminal, 9201: Portable information terminal

Claims

[Claim 1] A display device having a display unit, the display unit includes a light receiving element and a first light emitting element, the light receiving element has a first pixel electrode, an active layer and a common electrode; the first light-emitting element has a second pixel electrode, a light-emitting layer, and the common electrode; the active layer is located on the first pixel electrode; the active layer comprises a first organic compound; the light-emitting layer is located on the second pixel electrode; the light-emitting layer has a second organic compound different from the first organic compound; the common electrode has a portion overlapping with the first pixel electrode via the active layer, and a portion overlapping with the second pixel electrode via the light-emitting layer.

Images