Display device

Abstract

To provide a display device whose drive circuit is prevented from breakage, when a flexible panel is handled, or provide a display device having a simplified structure.SOLUTION: A display device comprises a first plate and a second plate, a first flexible substrate, a display portion, a second flexible substrate, and a third plate and a fourth plate. The display portion comprises a transistor, the first plate and second plate are provided spaced from each other, the third plate and fourth plate are provided spaced from each other, an area between the first plate and second plate overlaps an area between the third plate and fourth plate, the display portion has the function of bending between the first plate and second plate, and the display portion has the function of bending in a first direction.SELECTED DRAWING: Figure 9

Description

Technical Field

[0001] It relates to a display device.

Background Art

[0002] In recent years, with the progress of digitization technology, a provision mode of providing character information and image information such as newspapers and magazines as electronic data has been adopted. This type of electronic data generally has the feature that its content is viewed by being displayed on a display device provided in a personal computer (PC) or the like. However, the display device provided in a PC or the like is quite different from paper media such as newspapers and magazines, and has disadvantages in terms of convenience such as difficulty in carrying. On the other hand, in order to eliminate the differences from the above-mentioned paper media, flexible electronic paper has been proposed (see, for example, Patent Document 1). When forming the display portion of flexible electronic paper using elements such as transistors, it is necessary to provide a circuit for driving the transistor. In this case, there is a risk that the circuit may be destroyed by bending the electronic paper. Also, it is conceivable that the bending of the electronic paper may be restricted by the driving circuit.

[0003]

[0004]

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] ​​​​​​​​In one aspect of the disclosed invention, when handling a flexible panel, the driving circuit breaks down, and one of the objectives is to provide a display device that reduces this. Or, in one aspect of the disclosed invention, one of the objectives is to provide a display device with a simplified structure. and In one aspect of the disclosed invention, one of the objectives is to provide a display device with a simplified structure.

Means for Solving the Problems

[0007] One aspect of the disclosed invention is a flexible display panel having a display portion where scanning lines and signal lines intersect, a support portion that holds one end of the flexible display panel, a signal line driving circuit provided in the support portion that outputs a signal to the signal lines, and a scanning line driving circuit disposed substantially perpendicular to the support portion on the flexible surface of the display panel that outputs a signal to the scanning lines. and a scanning line driving circuit that outputs a signal to the scanning lines disposed substantially perpendicular to the support portion on the flexible surface of the display panel. A display device having a signal line driving circuit that outputs a signal to the signal lines. is a display device.

[0008] In one aspect of the disclosed invention, the scanning line driving circuit may have a plurality of circuit portions, and the plurality of circuit portions may be provided spaced apart from each other. It may be a display device.

[0009] In one aspect of the disclosed invention, it may also be a display device having a stress concentration region between the plurality of circuit portions. It may be.

[0010] In one aspect of the disclosed invention, the scanning line driving circuit and the signal line driving circuit may have transistors, and the structure of the transistors constituting the scanning line driving circuit and the transistors constituting the signal line driving circuit may be different. It may be a display device. It may be a display device.

[0011] In one aspect of the disclosed invention, the channel layer of the transistors constituting the scanning line driving circuit may be a non-single crystal semiconductor, and the channel layer of the transistors constituting the signal line driving circuit may be a single crystal semiconductor. It may be a display device. It may be a display device.

[0012] In one aspect of the disclosed invention, the non-single crystal semiconductor may be an amorphous silicon, microcrystalline silicon, polysilicon, or oxide semiconductor display device.

[0013] In one aspect of the disclosed invention, the display unit has transistors, and the display device may be such that the channel layers of the transistors constituting the display unit and the transistors constituting the scanning line driving circuit are provided with the same material.

[0014] In one aspect of the disclosed invention, the support unit may be a display device having any one of a battery, an antenna, a CPU, and a memory in addition to the signal line driving circuit.

[0015] Also, in this specification and the like, the semiconductor device generally refers to a device that can function by utilizing semiconductor characteristics, and all electro-optical devices, semiconductor circuits, and electronic devices are included in the semiconductor device.

[0016] Also, in this specification and the like, the display device includes a light-emitting device and a liquid crystal display device. The light-emitting device includes a light-emitting element, and the liquid crystal display device includes a liquid crystal element. The light-emitting element includes, in its category, an element whose luminance is controlled by current or voltage. Specifically, there are inorganic EL (Electro Luminescence) elements, organic EL elements, and the like.

Effects of the Invention

[0017] According to one aspect of the disclosed invention, it is possible to provide a robust display device that reduces the breakdown of the driving circuit.

[0018] According to one aspect of the disclosed invention, it is possible to simplify the structure and reduce the cost of the display device.

Brief Description of the Drawings

[0019] ​​​​​​​​​​

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Figure 13

Figure 14

Figure 15

Figure 16

Embodiments for Carrying Out the Invention

[0020] Hereinafter, embodiments will be described in detail with reference to the drawings. However, the invention is not limited to the description content of the following embodiments, and it is obvious to those skilled in the art that the forms and details can be variously changed without departing from the gist of the invention disclosed in this specification and the like. Also, different from the above and without departing from the gist of the invention disclosed in this specification and the like, various changes can be made to the forms and details. It is obvious to those skilled in the art that different The configurations according to the embodiments can be implemented in appropriate combinations. Note that in the configuration of the invention described below, the same reference numerals are used for the same parts or parts having the same functions, and repeated descriptions thereof are omitted.

[0021] Note that the sizes, layer thicknesses, or areas of the respective components shown in the drawings and the like of each embodiment may be exaggerated for clarity. Therefore, they are not necessarily limited to that scale. Note that the terms "first", "second", "third", etc. used in this specification are added to avoid confusion of components, and it is noted that they are not numerically limiting.

[0022] In addition, it should be noted that the terms such as "first", "second", "third", etc. used in this specification are added to avoid confusion of components and are not numerically limiting.

[0023] (Embodiment 1) In this embodiment, an example of a display device will be described with reference to the drawings.

[0024] The display device shown in this embodiment has a flexible display panel having a display portion where scanning lines and signal lines intersect, a support portion that holds one end of the flexible display panel, a signal line driving circuit that outputs a signal to the signal lines provided in the support portion, and a scanning line driving circuit that outputs a signal to the scanning lines arranged substantially perpendicular to the support portion on the flexible surface of the display panel.

[0025] FIG. 1 shows a case where a support portion 4308 is provided at one end of a display panel 4311 as an example of a display device. Hereinafter, the specific configuration of the display device will be described with reference to FIG. 1. Note that FIG. 1(A) shows the state where the display device is horizontal, and FIG. 1(B) shows the state where the display device is vertical.

[0026] ​​​The display device shown in FIG. 1 includes a display panel 4311 having a display unit 4301, a support unit 4308 provided at one end of the display panel 43 11, a scanning line driving circuit 4321a, 4321b for performing display control of the display unit 4301, and a signal line driving circuit 43 23 for performing display control of the display unit 4301.

[0027] The scanning line driving circuits 4321a, 4321b are provided on the display panel 4311, and the signal line driving circuit 4323 is provided inside the support unit 4308.

[0028] The display panel 4311 can be configured to have flexibility. In this case, a pixel circuit constituting the display unit 4301 and scanning line driving circuits 4 321a, 4321b may be provided on a flexible substrate such as plastic.

[0029] The support unit 4308 is preferably configured to be less bendable (higher in rigidity) than at least the display panel 4311. As an example, the housing constituting the support unit 4308 can be formed of plastic or metal that is thicker than the display panel 43 11. In this case, the display device can be configured to bend (curve) at portions other than the support unit 4308.

[0030] Also, the location where the support unit 4308 is provided is not particularly limited. As an example, the support unit 4308 can be provided along one end of the display panel 43 11. For example, as shown in FIG. 1, when the display panel 4311 is rectangular, the support unit 4308 can be provided along a predetermined side (to fix one side). Here, the rectangular shape includes the case where the corners are rounded.

[0031] The signal line driving circuit 4323 is provided inside the support portion 4308. For example, the support portion 430 8 is provided as a columnar or cylindrical housing having a hollow, and the signal line driving circuit 432 3 can be provided in the hollow portion. By providing the signal line driving circuit 4323 inside the support portion 4308 it is possible to prevent damage to the signal line driving circuit 4323 caused by bending of the display panel 4311 .

[0032] Also, as shown in FIG. 1, it is preferable to provide the scanning line driving circuits 4321a and 4321b at both ends in a direction substantially parallel to the support portion 4308 in the display panel 431 1. Thereby, compared with the case where the scanning line driving circuit and the signal line driving circuit are provided at one location (for example, the support portion 4308), the routing of the wiring can be reduced and the structure can be simplified . Also, by forming the pixel circuits constituting the scanning line driving circuits 4321a and 4321b and the display portion 4301 on a flexible substrate in the same process, the scanning line driving circuits 4321a

[0033] 4321b can be curved and the cost can be reduced . As the elements constituting the pixel circuits and the scanning line driving circuits 4321a and 4321b constituting the display portion 4301, they can be formed of thin film transistors or the like. On the other hand, a circuit such as the signal line driving circuit

[0034] 4323 that operates at high speed is formed using an IC (Integrated Circuit) formed using a semiconductor substrate such as silicon or an SOI substrate, and the IC can be provided inside the support portion 4308 . In this way, an IC in which a circuit that operates at high speed such as a signal line driving circuit is formed is provided inside the support portion .

[0035] ​Provided that the pixel circuit constituting the scanning line driving circuit and the display unit is formed of elements such as thin film transistors on a flexible substrate, the signal line driving circuit and the scanning line driving circuit are provided by an IC Compared with the case where it is provided, the curvature of the display panel is facilitated, the destruction of the IC due to bending of the display panel is suppressed, and further cost reduction can be achieved. Further, by providing the scanning line driving circuit at an end portion in a direction substantially perpendicular to the support portion in the display panel, the routing of the wiring can be suppressed and the structure can be simplified. In FIG. 1, the case where the scanning line driving circuit is formed at both end portions of the display panel 4311 is shown, but it may be configured to be provided only at one end portion (either one of the scanning line driving circuit 4321a and the scanning line driving circuit 4321b).

[0036]

[0037] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments.

[0038] (Embodiment 2) In this embodiment, the specific configuration of the display device shown in FIG. 1 above will be described with reference to the drawings. Note that the configuration shown in this embodiment is common to that of the first embodiment in many parts. Therefore, in the following, the description of the overlapping parts will be omitted, and the different points will be described in detail.

[0039] First, an example of the specific configuration of the display device will be described with reference to FIG. 2. Note that FIG. 2(A) shows a plan view of the display device, FIG. 2(B) shows a cross section between A1 and B1 in FIG. 2(A), and FIG. 2(C) shows a detailed schematic diagram of the cross section.

[0040] The display device shown in FIG. 2 is formed of a housing in which the support portion 4308 has a hollow interior and a signal line driving circuit 4323 is provided therein. Here, the signal line driving circuit 4323 is formed of an IC and the IC is provided inside the support portion 4308. The IC can be formed using a semiconductor substrate such as silicon or an SOI substrate. Of course, circuits other than the signal line driving circuit (for example, a CPU, a memory, etc.) can be provided in the IC

[0041] Also, in FIG. 2, the case where the IC provided inside the support portion 4308 is mounted on an FPC (Flexible Printed Circuit) using the TAB (Tape Automated Bonding) method is shown. More specifically, a signal line driving circuit 4323 for controlling the display portion 4301 is provided on the FPC 4324, and the FPC 4324 is electrically connected to the printed circuit board 4325

[0042] Also, as shown in FIG. 2, the printed circuit board 4325 can be provided in contact with the support portion 4308

[0043] When the signal line driving circuit 4323 is provided on the FPC 4324, it is preferable to provide a stress concentration region 4326 in the display panel 4311. By providing the stress concentration region 4326 in the display panel, the stress applied to the FPC 4324 when the display panel 4311 is bent can be reduced and the destruction of the signal line driving circuit 4323 provided on the FPC 4324 can be suppressed

[0044] Note that the stress concentration region refers to a region where stress is concentrated, which is formed by deformation of a member due to a cut or the like, or by bending or elongation due to attachment of a member, etc., and a change in strength against bending Specifically​​​​​​​​​ By providing a cut (recess, groove) in the portion of the display panel 4311 that is to be bent, a stress concentration region 4326 can be formed.

[0045] For example, the display panel 4311 can be formed using an element substrate 4331 and a sealing substrate 4332, and a configuration can be adopted in which a cut is provided in one or both of the element substrate 4331 and the sealing substrate 4332. In FIG. 2, the case of forming the stress concentration region 4326 by providing a cut in the sealing substrate 4332 is shown. Also, in the structure shown here, the element substrate 433 1 forms a pixel circuit for driving the display unit 4301 and scanning line driving circuits 4321a and 4321b, and these circuits can be electrically connected to the FPC 4324.

[0046] Note that pixels are arranged (arrayed) in a matrix in the display unit 4301, and the scanning lines 43 61 and signal lines 4362 are arranged so as to be orthogonal. The arrangement of the pixels includes cases where the pixels are arranged in a straight line in the vertical or horizontal direction, or are arranged on a jagged line. Therefore, for example, in the case of a stripe arrangement or when the dots of three color elements are arranged in a delta pattern, the scanning lines 4361 and the signal lines 4362 are arranged according to the arrangement of the pixels. Also, the stress concentration region 4326 may be provided along the direction in which the display panel 4311 is to be bent. For example, in FIG. 2(A), by providing a cut from the upper end to the lower end of the display panel 4311 along a direction substantially parallel to the support portion 4308, the direction of bending the display panel 4311 can be controlled (selecting the display panel 4311 in a direction perpendicular to the support portion 4308).

[0047] ​​​​​The signal line driver circuit 4 on the FPC4324 is 323 destruction can be suppressed.

[0048] It should be noted that the stress concentration area 4326 may be provided inside or outside the support portion 4308 . For example, when the support portion 4308 is provided close to the display panel 4311, The stress concentration area 43 is located outside the support portion 4308 (for example, between the support portion 4308 and the display portion 4301). It is preferable to provide 26.

[0049] Next, a configuration of a display device different from that shown in FIG. 2 will be described with reference to FIG. 3. FIG. 3(A) shows a display device. FIG. 3(B) shows a cross section taken along line A2-B2 of FIG. 3(A), and FIG. 3(C) shows a plan view of the display device. ) shows a detailed schematic diagram of the cross section.

[0050] FIG. 3 shows a display panel 4311 using the COG (Chip On Glass) method. This shows a case where an IC in which a signal line driver circuit 4323 is formed is mounted. A signal line driver circuit 4323 for controlling the display portion 4301 constitutes a display panel 4311. A signal line driver circuit 4323 is printed on a substrate 4331 via an FPC 4324. It is electrically connected to the substrate 4325 .

[0051] As shown in FIG. 3, when a signal line driver circuit is provided on a display panel, the display It is preferable to provide a stress concentration area 4326 on the display panel 4311. In this case, the stress concentration The region 4326 is a region different from the region where the signal line driver circuit 4323 is provided (the region where the signal line driver circuit For example, the insulating film 4332 is provided on the sealing substrate 4332 side. By doing so, when the display panel 4311 is bent, the stress applied to the signal line driving circuit 4323 can be reduced, and the destruction of the signal line driving circuit 4323 can be suppressed.

[0052] Next, a configuration of a display device different from that in FIGS. 2 and 3 will be described with reference to FIG. 4. FIG. 4(A ) shows a plan view of the display device, FIG. 4(B) shows a cross section between A3 and B3 in FIG. 4(A), and FIG 4(C) shows a detailed schematic diagram of the cross section.

[0053] FIG. 4 shows a case where an IC in which circuits such as a signal line driving circuit are formed is provided on a printed circuit board, and the printed circuit board and the display panel are connected using an FPC. More specifically, a signal line driving circuit 4323 that controls the display unit 4301 is provided on the printed circuit board 4327, and the display panel 4311 and the signal line driving circuit 4323 are electrically connected via the FPC 4324 .

[0054] In FIG. 4, since the display panel 4311 can be bent by the FPC 4324, a configuration in which no stress concentration region is provided in the display panel 4311 can be adopted.

[0055] Next, an example of the configuration of the support portion 4308 and the circuit that can be provided in the support portion 4308 will be described with reference to FIG. 5.

[0056] FIG. 5 illustrates a case where a display control unit 200 including a signal line driving circuit is built in the support portion 4308. These circuits can be formed using an IC formed using a semiconductor substrate such as silicon or an SOI substrate .

[0057] The display control unit 200 includes a CPU 201, a storage unit 203, a power supply unit 205, and a power supply circuit 207 ​, a configuration having an image signal generation circuit 215, a signal line drive circuit 4323, an operation unit 219, etc. can be. Further, each configuration can be connected via an interface or the like. Also the display control unit 200 is electrically connected to the display panel 4311. Here, the case where the operation unit 219 is provided on the support unit 4308 is shown, but the operation unit 219 can also be provided on the display panel 4 311.

[0058] The CPU 201 controls the operation of the entire display device.

[0059] The data input unit 211 receives information to be displayed on the display unit 4301 from an external device. Note that the data input unit 211 may have an antenna 216 in order to transmit and receive data with an external device. In this case, the data input unit 211 has a function of transferring data received by the antenna 216 and data stored in a recording medium (external memory 213) to the internal memory 209

[0060] The storage unit 203 can be configured to include an internal memory 209, a data input unit 211, and an external memory 213. The internal memory 209, the data input unit 211, and the external memory 213 can record information to be displayed on the display unit 4301, a program for operating the display device, etc.

[0061] The internal memory 209 has a storage unit that stores a program for the CPU 201 to process signals output to the image signal generation circuit 215 and / or the power supply circuit 207 based on signals from the power supply unit 205, the operation unit 219, etc., and data transferred from the data input unit 211. As an example of the internal memory 209, DRAM (Dynamic Random Acc essive Memory) can be used. ess Memory), SRAM (Static Random Access Me mory), mask ROM (Read Only Memory), PROM (Prog rammable Read Only Memory), etc.

[0062] As the external memory 213, there are storage media such as IC cards and memory cards.

[0063] The power supply unit 205 is composed of a secondary battery, a capacitor, etc. As the secondary battery, for example, a lithium battery, preferably a lithium polymer battery using a gel electrolyte, a lithium ion battery etc. can be used to miniaturize. Of course, any rechargeable battery can be used, a nickel metal hydride battery, a nickel cadmium battery, an organic radical battery, a lead storage battery, an air secondary battery, nickel zinc battery, a silver zinc battery, etc. may also be rechargeable batteries. As the capacitor, an electric double layer capacitor, a lithium ion capacitor, or other large-capacity capacitors can be used for this. The capacitor is suitable because it has little deterioration even when the number of charge and discharge cycles increases and has excellent rapid charging characteristics. As the shape of the power supply unit 205, a sheet shape, a cylindrical shape, a prismatic shape a plate shape, a coin shape, etc. can be appropriately selected.

[0064] Also, the power supply unit 205 can be configured to be wirelessly powered. In this case an antenna may be provided in the power supply unit 205.

[0065] The power supply circuit 207 is a circuit for controlling the power supply to the display element in order to perform the display and non-display of the display panel 4311 according to the control of the CPU 201.

[0066] ​The operation unit 219 can be provided with a keyboard, operation buttons, etc. In the case where the display panel 4311 is provided with the display unit 4301, The display unit can function as an operation unit.

[0067] In FIG. 5, the display control unit 200 is built into the support unit 4308. A so-called power device such as a switching power supply or a DC-DC converter may be provided.

[0068] In addition, in the display device shown in FIG. 5, the power supply and the display can be controlled by operating the operation unit 219. In addition, the display unit 4301 can be used as a touch display. The portion 4301 may be configured to be operated by touching it with a finger or an input pen.

[0069] In this way, by incorporating the display control unit 200 in the support unit 4308, The display device can be protected by the housing, and can be made thin.

[0070] In the first and second embodiments, the display panel 4311 includes a scanning line driver circuit 4321a 4321b are provided along the display portion 4301, but the present invention is not limited to this.

[0071] For example, as shown in FIG. 6A, in a display panel 4311, a scanning line driver circuit 432 1a and 4321b are provided so as to be spaced apart from the support portion 4308 compared to the display portion 4301. In general, the elements constituting the scanning line driver circuits 4321a and 4321b are Since the elements constituting the basic circuit are arranged in a concentrated manner, the display panel 4311 can be folded. By providing the scanning line driving circuits 4321a and 4321b at a distance from the portion where the scanning lines The damage to the drive circuits 4321a and 4321b can be suppressed.

[0072] Also, as shown in FIGS. 6(B) and 6(C), the scanning line drive circuits 4321a and 4321b can be each provided by being divided into a plurality of circuit portions, and the plurality of circuit portions can be provided spaced apart from each other. Thereby, even when the display panel 4311 is curved, the stress applied to the scanning line drive circuits 4321 a and 4321b can be reduced, and the damage to the scanning line drive circuits 4321a and 4321b can be suppressed. FIG. 6(B) shows a case where the scanning line drive circuits 4321a and 4321b are each divided into two circuit portions and provided, and FIG. 6(C) shows a case where the scanning line drive circuits 4321a and 4321b are each divided into four circuit portions and provided, but the number of divisions is not limited to this.

[0073] Also, as shown in FIG. 6(D), in the display panel 4311, it may be configured to be provided only at one end (only one of the scanning line drive circuit 4321a and the scanning line drive circuit 4321b). Thereby, it becomes possible to achieve a narrow bezel of the display device.

[0074] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments.

[0075] (Embodiment 3) In this embodiment, regarding a display device having a flexible display panel when it is used in a curved state, an example of the operation and effect of the above embodiment will be shown and described with reference to FIGS. 7 to 10.

[0076] First, in FIG. 7(A), a front plan view when a user uses the display device, FIG. 7(B) ​​​​​) will show and explain a top plan view when the user uses the display device.

[0077] The display device shown in FIG. 7(A) has a display panel 4311 and a support portion 4308. The display panel 4311 has a display portion 4301, and the display portion 4301 is supplied with a scanning signal to the display portion 4301 by a scanning line driving circuit 4321 and an image signal to the display portion 4301 by a signal line driving circuit 4323, and the display will be controlled. Also, in FIG. 7(A), the state of the user holding the support portion 4308 with the hand 4 350 is also shown. Further, in the front plan view shown in FIG. 7( A), the line of sight when viewing the top plan view shown in FIG. 7(B) is also appended.

[0078] The top plan view shown in FIG. 7(B) shows the display panel 4311 and the support portion 4308. As shown in FIG. 7(B), when the user uses the display device with the hand 4350, the flexible display panel has a bent portion (hereinafter referred to as the bent portion C) within the range of the arrow shown as C in the figure, and a non-bent portion (hereinafter referred to as the non-bent portion D) within the range of the arrow shown as D in the figure. will be formed.

[0079] In FIG. 7(B), as an example, regarding the bent portion C and the non-bent portion D of the first display panel 4311, the side closer to the support portion 4308 is described as the bent portion C, and the side away from the support portion 4308 is described as the non- bent portion D. The positions of the bent portion C and the non-bent portion D vary depending on the configuration of the support portion 4308 and the material of the substrate constituting the display panel, and the way the display panel is curved is different. Therefore, regarding the bent portion C and the non-bent portion D of the display panel 4311, the side away from the support portion 4308 may be the bent portion C, and the side closer to the support portion 4308 may be the non-bent portion D. ​

[0080] Since the display device is configured to fix the display panel by the support portion 4308, the support portion The bending portion C and the non-bending portion D are formed on the display panel 4311 in a direction perpendicular to the extending direction of 4308 (the arrow 7001 in the depth direction (or the front direction) in FIG. 7(B)) and the vertical direction (the arrow 7002 in FIG. 7(B)). Therefore, by arranging the signal line driving circuit 4323 as described above, bending in a direction perpendicular to the support portion 4308 can be enabled and breakage can be prevented. Also, by arranging the scanning line driving circuit 4321 at an end portion in a direction substantially parallel to the support portion 4308 on the display panel 4311, it becomes possible to manufacture it in the same process as the display portion, so that cost reduction can be achieved, and the routing of the wiring to the display portion can be reduced as compared with the case of providing it on the support portion 4308. Note that a plurality of bending portions C and non-bending portions D may be formed, or they may be formed alternately. Also, a stress concentration region may be provided on the display panel, and the bending portion C and the non-bending portion D may be artificially formed.

[0081]

[0082] Next, in FIGS. 8(A) to 8(C), similar to FIG. 7(A), a front plan view when the display device is used is shown, and the arrangement of the scanning line driving circuit 4321 with respect to the bending portion C and the non-bending portion D will be described.

[0082] In FIG. 8(A), the side close to the support portion 4308 is described as the bending portion C, and the side away from the support portion 4308 is described as the non-bending portion D. Therefore, the scanning line driving circuit 4321 is provided on the non-bending portion D on the side away from the support portion 4308, respectively. Note that the supply of the scanning signal to the pixel TFT 4352 in the display portion is through the wiring extending from the scanning line driving circuit 4321 to the display ​It may be performed by routing to each scanning line of the section. Note that the supply of control signals such as a clock signal for driving the scanning line driving circuit 4321 is from the video signal generation circuit in the support section 4308 through the wiring extending therefrom. The wiring for making electrical connections between circuits is formed by microfabrication such as a metal film, and the semiconductor film of the transistor constituting the scanning line driving circuit is formed of a semiconductor material such as a silicon film . The metal film has superior ductility compared to the semiconductor material and little damage due to bending. Therefore, by disposing the wiring connected to the scanning line driving circuit at the location corresponding to the bent portion C and disposing the transistors constituting the scanning line driving circuit at the location corresponding to the non-bent portion D , damage to the semiconductor film of the transistor due to bending can be reduced . As a result, by arranging the scanning line driving circuit 4321 as shown in Fig. 8(A), when the user uses the display device with the hand 4350, damage to the circuit can be suppressed . In Fig. 8(B), a configuration is shown in which the bent portion C and the non-bent portion D are alternately provided from the side close to the support portion 4308 toward the side far therefrom. Therefore, the arrangement of the scanning line driving circuit 4321 is such that in the non-bent portion D, the driving circuit is divided into a plurality and provided separately from each other . Note that the supply of the scanning signal to the pixel TFT 4352 in the display section may be performed by routing the wiring extending from the scanning line driving circuit 432 1. Note that the control signals such as a clock signal for driving the scanning line driving circuit 4321 are performed through the wiring extending from the video signal generation circuit in the support section 4308

[0083] . Also, the signals propagated between the pulse signal generation circuits such as flip-flops constituting the scanning line driving circuit are performed through the wiring . The electrical connection between circuits is made The wiring for singing is formed by microfabrication such as a metal film and constitutes a scanning line drive circuit. The semiconductor film of the transistor is formed of a semiconductor material such as a silicon film. The metal film has superior ductility compared to the semiconductor material and less damage due to bending. Therefore, by arranging the wiring connected to the scanning line drive circuit at the location corresponding to the bent portion C and arranging the transistors constituting the scanning line drive circuit at the location corresponding to the non-bent portion D, damage to the semiconductor film of the transistor due to bending can be reduced. Also, in Fig. 8(B), the drive circuit is divided into a plurality of parts and arranged separately from each other, so that the stress applied to the scanning line drive circuit when bent can be dispersed. As a result, by arranging the scanning line drive circuit 4321 as shown in Fig. 8(B), when the user uses the display device with the hand 4350, circuit breakage can be more effectively suppressed.

[0084] In Fig. 8(B), the scanning line drive circuit 4321 may be arranged above and below the display unit as the scanning line drive circuit 4321a and the scanning line drive circuit 4321b to form a redundant configuration, or a configuration in which the function of outputting the scanning signal is dispersed. Fig. 8(C) is a diagram in which the configuration described in Fig. 8(B) is arranged above and below the display panel. The scanning signal supplied to the pixel TFT4352 is supplied by arranging the scanning line drive circuit 4321a and the scanning line drive circuit 4321b above and below. As a result, the pulse signal generation circuit such as a flip-flop constituting the scanning line drive circuit can be reduced, so that when the user uses the display device with the hand 4350, circuit breakage can be suppressed.

[0085] In Figs. 8(B) and (C) above, by showing a specific example, in the region that becomes the bent portion C, the scanning ​​​​​​The advantages of arranging the scanning line driving circuit in the region that becomes the non-bending portion D instead of arranging the line inspection driving circuit are described. With this configuration, the stress applied to the scanning line driving circuit when it is bent can be dispersed, and circuit breakage can be suppressed when the user uses the display device with their hand 4350.

[0086] Next, as described with reference to FIGS. 8(B) and 8(C), when the scanning line driving circuit is divided into a plurality of parts and provided separately from each other, an example of providing a stress concentration region for artificially forming the bending portion C and the non-bending portion D in the display panel will be described with reference to FIGS. 9 and 10. FIG. 9(A) shows a plan view of the display device, and FIGS. 9(B) and 9(C) are examples of cross-sectional views taken along the line E1 - F1 in FIG. 9(A). Also, FIG. 10(A) shows a plan view of the display device, and FIGS. 10(B) and 10(C) are examples of cross-sectional views taken along the line E2 - F2 in FIG. 10(A). In FIG. 9(A), the display panel 4311, the support portion 4308, the display portion 4301, the scanning line driving circuit 4321, and the signal line driving circuit 4323 are shown. The scanning line driving circuit 4321 is shown divided into two circuit parts and is provided separately from each other via the wiring 920. The stress concentration region 921 is preferably formed so as to overlap the wiring 920. FIG. 9(B) shows a cross-sectional view in the direction perpendicular to the support portion. In the stress concentration region 921 that overlaps the wiring 920, a cutout portion 922a may be provided on the sealing substrate 923, and a cutout portion 922b may be provided on the element substrate 924 as an example. As shown in FIG. 9(C), by attaching a reinforcing plate 925 on the scanning line driving circuit 4321 of the element substrate 924 and the sealing substrate 923,

[0087] it may be configured to form the cutout portion 922a and the cutout portion 922b. ​​​​​​​​​​ The portion 922a and the notch portion 922b may be provided parallel to the major axis direction of the support portion 4308. Moreover, it may be configured to be provided only in a part.

[0088] The stress concentration region refers to a region where stress is concentrated, which is formed by deformation of a member due to a notch or the like, or by bending or elongation due to attachment of a member, etc., and a change in strength with respect to the bending or elongation. That is, it refers to a region where stress is concentrated.

[0089] The division of the scanning line driving circuit means a state in which a region where circuit elements such as TFTs and wirings are mixed and repeated layout is divided by a region used for wiring routing. That is, it refers to such a state. That is.

[0090] Also, in FIG. 10(A), similar to FIG. 9(A), the display panel 4311, the support portion 4308, the display portion 4301, the scanning line driving circuit 4321, and the signal line driving circuit 4323 are shown. The scanning line driving circuit 4321 is divided into four circuit portions and is provided separately from each other via the wiring 920. The stress concentration region 921 is preferably formed so as to overlap with a plurality of wirings 920. FIG. 10(B) shows a cross-sectional view in a direction perpendicular to the support portion. In the stress concentration region 921 that overlaps with the wiring 920, a plurality of notch portions 922a may be provided on the sealing substrate 923, and a plurality of notch portions 922b may be provided on the element substrate 924 as an example. As shown in FIG. 10(C), by attaching the reinforcing plate 925 on the scanning line driving circuit 4321 of the element substrate 924 and the sealing substrate 923, it may be configured to form a plurality of notch portions 922a and a plurality of notch portions 922b. The plurality of notch portions 922a and the plurality of notch portions 922b may be provided parallel to the major axis direction of the support portion 4308, or may be configured to be provided only in a part. The scanning line driving circuit 4321 is divided into four circuit portions and is provided separately from each other via the wiring 920. The stress concentration region 921 is preferably formed so as to overlap with a plurality of wirings 920. FIG. 10(B) shows a cross-sectional view in a direction perpendicular to the support portion. In the stress concentration region 921 that overlaps with the wiring 920, a plurality of notch portions 922a are provided on the sealing substrate 923, and a plurality of notch portions 922b may be provided on the element substrate 924 as an example. Note that, as shown in FIG. 10(C), by attaching the reinforcing plate 925 on the scanning line driving circuit 43 21 of the element substrate 924 and the sealing substrate 923, it may be configured to form a plurality of notch portions 922a and a plurality of notch portions 922b. The plurality of notch portions 922a and the plurality of notch portions 922b may be provided parallel to the major axis direction of the support portion 4308, or may be configured to be provided only in a part.

[0091] Note that the number of divisions of the scanning line drive circuit shown in FIGS. 9 and 10 is an example for explanation, and it may be divided into any number as appropriate.

[0092] As described above, according to the configuration of the present embodiment, when using the display device, breakage of the scanning line drive circuit can be more effectively suppressed. Also, according to the configuration of the present embodiment, by providing a stress concentration region such as a cut portion in advance with respect to the display panel, breakage of the scanning line drive circuit can be suppressed more effectively.

[0093] The present embodiment can be implemented in appropriate combination with the configurations described in other embodiments.

[0094] (Embodiment 4) In the present embodiment, an example of a display panel provided in the display device is shown. As the display panel, a display panel having various display elements can be applied, and it may be a passive matrix type or an active matrix type.

[0095] As the display panel, electronic paper, a light-emitting display panel (EL (electroluminescence) panel), a liquid crystal display panel, etc. can be used. The display panel is a panel in a state where the display elements are sealed, and a connector, for example, an FPC (Flexible Printed Circuit) or a TAB (Tape Automated Bonding) tape or a TCP (Tape Carrier Package) is attached and electrically connected to an external circuit including a signal line drive circuit. The IC which is the signal line drive circuit may be directly mounted on the display panel by the COG (Chip On Glass) method. ​​​​​​​​​​​​​​

[0096] The display panel 4311 can be a double-sided display type that displays on both sides or a single-sided display type that displays on only one side. A panel may be used. For the double-sided display type panel, a double-sided injection type display panel may be used, or a single-sided injection type display panel may be bonded and used. Also, two liquid crystal display panels with a backlight (preferably a thin EL panel) sandwiched therebetween may be used.

[0097] Examples of the double-sided display type panel applicable to the display panel 4311 are shown in FIGS. 11(A) to (C). In FIGS. 11(A) to (C), the arrows indicate the light emission direction (viewing side).

[0098] FIG. 11(A) shows a display panel 4313 in which a display element 102 is sandwiched between a substrate 100 and a substrate 101, where a first display portion 4302 is provided on the substrate 100 side and a second display portion 4310 is provided on the substrate 101 side. Since the first display portion 4302 and the second display portion 4 310 are displayed by the display element 102, the substrates 100 and 101 have translucency. The display element 102 is preferably an EL element which is a self-luminous type light emitting element. When using the light incident on the display panel 4313, a liquid crystal display element or an electrophoretic display element can also be used as the display element 102.

[0099] FIG. 11(B) shows a display panel 4313 which is a laminate of a single-sided display panel including a display element 114 sandwiched between a substrate 110 and a substrate 112 and a single-sided display panel including a display element 115 sandwiched between a substrate 111 and a substrate 113, where a first display portion 4302 is provided on the substrate 110 side and a second display portion 4310 is provided on the substrate 111 side. The first display portion is formed by the display element 114. 4302 is displayed, and since the second display section 4310 is displayed by the display element 115, the substrate 110 and the substrate 111 have translucency. On the other hand, the substrate 112 and the substrate 113 do not necessarily have translucency and may have reflectivity. Note that the single-sided display panels may be bonded and attached to each other by bonding the substrate 112 and the substrate 113 with an adhesive layer. Also, only one of the substrate 112 and the substrate 113 may be used.

[0100] It is preferable to use EL elements for the display element 114 and the display element 115. Note that when utilizing the light incident on the display panel 4313, liquid crystal display elements or electrophoretic display elements may also be used as the display element 114 and the display element 115. To improve the light extraction efficiency, it is preferable to use a reflective display panel as the single-sided display type display panel.

[0101] A backlight may be provided between the transmissive liquid crystal display panels to form the display panel 4313. FIG. 11(C) shows a transmissive liquid crystal display panel including a display element 124 sandwiched between a substrate 120 and a substrate 122, and a transmissive liquid crystal display panel including a display element 125 sandwiched between a substrate 121 and a substrate 123, laminated via a backlight 126 serving as a light source, wherein a first display section 4302 is provided on the substrate 120 side and a second display section 4310 is provided on the substrate 121 side. The first display section 4302 is displayed by the light of the backlight 126 and the display element 124, and the second display section 4310 is displayed by the light of the backlight 126 and the display element 125, so the substrate 120, the substrate 121, the substrate 122, and the substrate 123 have translucency.

[0102] Note that the single-sided display panel and the backlight may be adhered and bonded together by an adhesive layer. Also, only one of the substrates 122 and 123 may be used. As the backlight 126, it is preferable to use a thin EL panel because the display panel 4313 can be thinned. Preferably.

[0103] In the case of a single-sided display panel, it is preferable to provide a non-transmissive or reflective housing on the surface where the display portion is not provided, as this can improve the strength of the display panel. Preferably.

[0104] One form of the display panel will be described with reference to FIGS. 12 to 14 and FIG. 16. FIGS. 12 to 14 and FIG. 16 correspond to the cross-sectional view taken along M-N in FIG. 4(A). FIGS. 12 to 14 and FIG. 16 show an example in which an FPC 4324 is attached to a display panel 4311 having a display portion 4301 with a pixel circuit and a scanning line driving circuit 4321a, and the display portion 4301 and the scanning line driving circuit 4321a provided on the element substrate 4331 are sealed with a sealing substrate 4332 by a sealing material 4005. As shown in FIGS. 12 to 14 and FIG. 16, the display panel 4311 has connection terminal electrodes 401

[0105] 5 and terminal electrodes 4016, and the connection terminal electrodes 4015 and the terminal electrodes 4016 are electrically connected via an anisotropic conductive film 4019 to the terminals of the F PC 4324. The connection terminal electrode 4015 is formed of the same conductive film as the first electrode layer 4030, and the terminal electrode 4 016 is formed of the same conductive film as the source electrode layer and the drain electrode layer of the thin film transistors 4010 and 4011.

[0106] The connection terminal electrode 4015 is formed from the same conductive film as the first electrode layer 4030, and the terminal electrode 4 016 is formed from the same conductive film as the source electrode layer and the drain electrode layer of the thin film transistors 4010 and 4011. Preferably.

[0107] Also, as shown in FIG. 4 above, a signal line driving circuit 4323 formed of a single-crystal semiconductor film or a polycrystalline semiconductor film on a separately prepared substrate is mounted by an FPC and provided within a support portion 4308. Various signals and potentials supplied to the signal line driving circuit 4323, the scanning line driving circuit 4321a, and the display portion 4301 are supplied from an FPC 4324. The connection method of the signal line driving circuit 4323 is not particularly limited, and a COG method, a wire bonding method, a TAB method, or the like can be used. Also, the display portion 4301 provided on the element substrate 4331 and the scanning line driving circuit 4321a each have a plurality of thin film transistors. FIGS. 12 to 14 and FIG. 16 illustrate a thin film transistor 4010 included in the display portion 4301 and a thin film transistor 4011 included in the scanning line driving circuit 4321a. Insulating layers 4020 and 4021 are provided on the thin film transistors 4010 and 4011. Note that the insulating film 4023 is an insulating film that functions as an underlying film. The thin film transistors 4010 and 4011 are not particularly limited, and various thin film transistors can be applied. FIGS. 12 to 14 and FIG. 16 show an example in which an inverted staggered thin film transistor having a bottom gate structure is used as the thin film transistors 4010 and 4011. The thin film transistors 4010 and 4011 are of a channel etch type, but an inverted staggered thin film transistor of a channel protection type in which a channel protection film is provided on a semiconductor layer may be used.

[0108] The thin film transistor 4010 provided in the display portion 4301 is electrically connected to a display element and

[0109]

[0110]

[0111] ​ constitutes a display panel. The display element is not particularly limited as long as it can perform display, and various display elements can be used.

[0112] An electronic paper can be used as the display panel. In electronic paper, for the image writing means, there are many methods in various combinations such as the use of an electric field, a magnetic field, light, or heat, and for the change of the display medium, the use of a shape or position change , the use of a physical change, etc. For example, the twist ball method, the electrophoresis method, the powder system method (also called a toner display), the liquid crystal method , etc. can be mentioned.

[0113] Figures 12 and 16 show examples in which an active matrix type electronic paper is used as the display panel 4311. The electronic paper has the advantages of being as easy to read as paper, having lower power consumption compared to other display panels, and being able to be made thin and light in shape.

[0114] Figures 12(A)(B) and 16 show an active matrix type electronic paper as an example of the display panel.

[0115] The electronic paper in Figure 12(A) is an example of a display device using the twist ball display method. The twist ball display method is a method of performing display by arranging spherical particles painted white and black between electrode layers used in the display element and controlling the orientation of the spherical particles by generating a potential difference between the electrode layers.

[0116] Between a first electrode layer 4030 connected to the thin film transistor 4010 and a second electrode layer 4031 provided on the sealing substrate 4332, there are a black region 4615a and a white region 4615b. Moreover, spherical particles 4613 including a cavity 4612 filled with a liquid are provided around it. The periphery of the spherical particles 4613 is filled with a filler 4614 such as resin. The second electrode layer 4031 corresponds to a common electrode (opposing electrode). The second electrode layer 4031 is electrically connected to a common potential line.

[0117] In addition, instead of the twist ball, it is also possible to use an electrophoretic element. An example of using an electrophoretic element as a display element is shown in Fig. 12(B). A microcapsule 4713 with a diameter of about 10 μm to 200 μm encapsulating a transparent liquid 4712, negatively charged black fine particles 4715a as the first particles, and positively charged white fine particles 4715b as the second particles is used.

[0118] When an electric field is applied by the first electrode layer 4030 and the second electrode layer 4031, the microcapsules 4713 provided between the first electrode layer 4030 and the second electrode layer 4031 cause the white fine particles 4715b and the black fine particles 4715a to move in opposite directions, enabling the display of white or black. A display element applying this principle is an electrophoretic display element. Since the electrophoretic display element has a high reflectivity, an auxiliary light is not required, and it also has low power consumption and can recognize the display part even in a dim place. Also, even when no power is supplied to the display part, it is possible to hold the once-displayed image, so even when the display panel is far from the radio wave emission source, it is possible to save the displayed image.

[0119] Note that the first particles and the second particles contain dyes and do not move in the absence of an electric field. Also, the colors of the first particles and the second particles are different (including colorless).

[0120] A dispersion of the above microcapsules in a solvent is called an electronic ink, and this electronic ink can be printed on the surfaces of glass, plastic, cloth, paper, etc. Also color display is possible by using color filters or particles having dyes.

[0121] Note that the first particles and the second particles in the microcapsules are made of a conductor material, an insulator material, a semiconductor material, a magnetic material, a liquid crystal material, a ferroelectric material, an electroluminescent material, an electr ochromic material, a magnetophoretic material, a material selected from these, or a composite material thereof may be used.

[0122] Also, it is possible to use Electronic Powder Fluid (registered trademark) as a powder system method. An example of using Electronic Powder Fluid as a display element is shown in Fig. 16. The first electrode layer 4030, the second electrode layer 403 1, and the space 4812 partitioned by the rib 4814 are filled with a positively charged black powder fluid 4815a and a negatively charged white powder fluid 4815b. Note that the space 4812 is air. When an electric field is applied by the first electrode layer 4030 and the second electrode layer 4031, the black powder fluid

[0123] 4815a and the white powder fluid 4815b move in opposite directions, and it is possible to display white or black. Color powder such as red, yellow, and blue may be used as the powder fluid. Also, as the display element, a light-emitting element (EL element) utilizing electroluminescence may be used. A light-emitting element utilizing electroluminescence is distinguished by whether the light-emitting material is an organic compound

[0124] or an inorganic compound. Generally, the former is an organic EL element, and the latter ​​is called an inorganic electroluminescent element.

[0125] In an organic electroluminescent element, when a voltage is applied to a light-emitting element, electrons and holes are respectively injected into a layer containing a light-emitting organic compound, and a current flows. Then, these carriers (electrons and holes) recombine to form an excited state of the light-emitting organic compound and emit light when the excited state returns to the ground state. Due to such a mechanism, such a light-emitting element is called a current-excited type light-emitting element.

[0126] Inorganic electroluminescent elements are classified into dispersed inorganic electroluminescent elements and thin-film inorganic electroluminescent elements according to their element structures. A dispersed inorganic electroluminescent element has a light-emitting layer in which particles of a light-emitting material are dispersed in a binder and its light-emitting mechanism is donor-acceptor recombination type luminescence that utilizes a donor level and an acceptor level. A thin-film inorganic electroluminescent element has a structure in which a light-emitting layer is sandwiched between dielectric layers and further sandwiched between electrodes, and its light-emitting mechanism is localized luminescence that utilizes inner-shell electron transitions of metal ions. Here, an organic electroluminescent element is used as the light-emitting element for explanation.

[0127] For a light-emitting element, at least one of a pair of electrodes may be transparent in order to extract light emission. Then, a thin-film transistor and a light-emitting element are formed on a substrate, and there are top emission that extracts light emission from the surface opposite to the substrate, bottom emission that extracts light emission from the surface on the substrate side, and double-sided emission structures that extract light emission from both the substrate side and the surface opposite to the substrate. Any light-emitting element with an emission structure can be applied.

[0128] Fig. 13 shows an example in which a light-emitting display panel (EL panel) is used as the display panel 4311. ​The light-emitting element 4513, which is the display element, is electrically connected to the thin-film transistor 401 provided in the display unit 4301. 0. The structure of the light-emitting element 4513 is a laminated structure of a first electrode layer 4030, an electroluminescent layer 4511, and a second electrode layer 4031, but is not limited to the shown structure. The structure of the light-emitting element 4513 can be appropriately changed according to the direction of the light extracted from the light-emitting element 4513 and the like.

[0129] The partition wall 4510 is formed using an organic resin film, an inorganic insulating film, or an organic polysiloxane. In particular, it is preferable to use a photosensitive material to form an opening on the first electrode layer 4030 and form it so that the side wall of the opening becomes an inclined surface formed with a continuous curvature.

[0130] The electroluminescent layer 4511 may be composed of a single layer or a plurality of layers laminated.

[0131] A protective film may be formed on the second electrode layer 4031 and the partition wall 4510 so that oxygen, hydrogen, moisture, carbon dioxide, etc. do not enter the light-emitting element 4513. As the protective film, a silicon nitride film, a silicon oxynitride film, a DLC film, etc. can be formed. Further, a filling material 4514 is provided in the space sealed by the element substrate 4331, the sealing substrate 4332, and the sealing material 4005. It is preferably packaged (encapsulated) with a protective film (laminated film, ultraviolet curable resin film, etc.) or a cover material that has high airtightness and little outgassing so as not to be exposed to the outside air.

[0132] As the filling material 4514, in addition to inert gases such as nitrogen and argon, an ultraviolet curable resin or A thermosetting resin can be used, such as PVC (polyvinyl chloride), acrylic, poly imide, epoxy resin, silicone resin, PVB (polyvinyl butyral) or EVA (ethylene vinyl acetate). For example, nitrogen can be used as a filler.

[0133] Also, if necessary, a polarizing plate, or a circular polarizing plate (including an elliptical polarizing plate), a retardation plate (λ / 4 plate, λ / 2 plate), a color filter, and other optical films can be appropriately provided on the light-emitting surface of the light-emitting element. Also, an antireflection film can be provided on the polarizing plate or the circular polarizing plate. For example, an antiglare treatment can be performed to diffuse the reflected light due to the surface irregularities and reduce the reflection.

[0134] FIG. 14 shows an example in which a liquid crystal display panel is used as the display panel 4311. In FIG. 14, the liquid crystal element 4013, which is a display element, includes a first electrode layer 4030, a second electrode layer 4031, and a liquid crystal layer 4008. Note that insulating films 4032 and 4033 that function as alignment films are provided so as to sandwich the liquid crystal layer 4008. The second electrode layer 4031 is provided on the sealing substrate 4332 side, and the first electrode layer 4030 and the second electrode layer 4031 are laminated via the liquid crystal layer 4008.

[0135] Also, 4035 is a columnar spacer obtained by selectively etching an insulating film, and is provided to control the film thickness (cell gap) of the liquid crystal layer 4008. Note that a spherical spacer can also be used.

[0136] Also, although not shown in the liquid crystal display device of FIG. 14, a color filter (colored layer), a black matrix ​​​Optical members (optical substrates) such as tricks (light-shielding layers), polarizing members, retardation members, and antireflection members are provided as appropriate. For example, circular polarization using a polarizing substrate and a retardation substrate may be used. Also , a backlight, a side light, etc. may be used as the light source. As the backlight, an E L panel is preferably used because it can be made thinner.

[0137] Also, a liquid crystal showing a blue phase that does not use an alignment film may be used. The blue phase is one of the liquid crystal phases and is a phase that appears immediately before the cholesteric liquid crystal transitions from the cholesteric phase to the isotropic phase when the temperature is raised. Since the blue phase appears only in a narrow temperature range, a liquid crystal composition mixed with 5 wt% or more of a chiral agent is used for the liquid crystal layer 4008 in order to improve the temperature range . The liquid crystal composition containing a liquid crystal showing a blue phase and a chiral agent has a response speed as short as 10 μs to 100 μs, is optically isotropic, does not require alignment treatment, and has little viewing angle dependence .

[0138] Note that FIG. 14 is an example of a transmissive liquid crystal display panel, but it can also be applied to a reflective liquid crystal display panel or a transflective liquid crystal display panel .

[0139] In FIGS. 12 to 14, and FIG. 16, as the element substrate 4331 and the sealing substrate 4332 , a plastic having light transmittance or the like can be used. As the plastic , an FRP (Fiberglass-Reinforced Plastics) plate, a PV F (polyvinyl fluoride) film, a polyester film, or an acrylic resin film can be used. Also, a sheet having a structure in which an aluminum foil is sandwiched between a PVF film and a polyester film can also be used.

[0140] ​​​ The insulating layer 4020 functions as a protective film for the thin film transistor.

[0141] The protective film prevents the intrusion of contaminating impurities such as organic matter, metals, and water vapor suspended in the air. The protective film is a silicon oxide film formed by sputtering. , silicon nitride film, silicon oxynitride film, silicon nitride oxide film, aluminum oxide film, aluminum nitride The aluminum oxide film, the aluminum nitride film, or the aluminum nitride oxide film is a single layer or a laminated layer. That's good.

[0142] The insulating layer 4021 functioning as a planarizing insulating film is made of a material selected from the group consisting of acrylic, polyimide, and benzosilane. Heat-resistant organic materials such as clobutene, polyamide, and epoxy can be used. In addition to the above organic materials, low-k materials, siloxane resins, and PS G (phosphorus glass), BPSG (borophosphorus glass), etc. can be used. The insulating layer may be formed by stacking a plurality of insulating films made of these materials.

[0143] The method for forming the insulating layers 4020 and 4021 is not particularly limited. ttach method, SOG method, spin coat, dip, spray coating, droplet ejection method (inkjet printing, screen printing, offset printing, etc.), doctor knife, roll coater, A coating machine, knife coater, etc. can be used. The insulating layer is formed using a material liquid. In this case, annealing the semiconductor layer (200℃ to 400℃) at the same time as the baking process is performed. By combining the firing process of the insulating layer with the annealing process of the semiconductor layer, display panels can be manufactured efficiently. It becomes possible to do so.

[0144] The display panel performs display by transmitting light from a light source or a display element. Therefore, all thin films such as the substrate, insulating film, and conductive film provided in the display portion through which light passes are made translucent to light in the visible wavelength region. In the first electrode layer and the second electrode layer (also referred to as a pixel electrode layer, a common electrode layer, a counter electrode layer, etc.) to which a voltage is applied to the display element, the light transmittance and reflectivity may be selected according to the direction of the light to be extracted, the location where the electrode layer is provided, and the pattern structure of the electrode layer. to be translucent.

[0145] The first electrode layer 4030 and the second electrode layer 4031 may be made of a conductive material having translucency, such as indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium tin oxide (hereinafter referred to as ITO). In the first electrode layer 4030 and the second electrode layer 4031, the light transmittance and reflectivity may be selected according to the direction of the light to be extracted, the location where the electrode layer is provided, and the pattern structure of the electrode layer.

[0146] The first electrode layer 4030 and the second electrode layer 4031 can be formed using one or more of indium zinc oxide, indium tin oxide added with silicon oxide, etc. In addition, the first electrode layer 4030 and the second electrode layer 4031 can be formed using a conductive composition containing a conductive polymer (also referred to as a conductive polymer). As the conductive polymer, indium zinc oxide, indium tin oxide added with silicon oxide, etc. can be used.

[0147] In addition, the first electrode layer 4030 and the second electrode layer 4031 can be formed using one or more of metals such as tungsten (W), molybdenum (Mo), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), cobalt (Co), nickel (Ni), titanium (Ti), platinum (Pt), aluminum (Al), copper (Cu), silver (Ag), (Mo), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb b), tantalum (Ta), chromium (Cr), cobalt (Co), nickel (Ni), titanium n (Ti), platinum (Pt), aluminum (Al), copper (Cu), silver (Ag), etc., or an alloy thereof, or one or more of its metal nitrides. can be.

[0148] In addition, as the first electrode layer 4030 and the second electrode layer 4031, a conductive composition containing a conductive polymer (also referred to as a conductive polymer) can be used. As the conductive polymer, ​​​ The so-called π-electron conjugated system conductive polymer can be used. For example, polyaniline or its derivatives, polypyrrole or its derivatives, polythiophene or its derivatives, or copolymers of two or more of these can be mentioned.

[0149] In addition, since the thin film transistor is easily damaged by static electricity or the like, it is preferable to provide a protection circuit for protecting the drive circuit. The protection circuit is preferably configured using a non-linear element.

[0150] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments.

[0151] (Embodiment 5) In this embodiment, examples of the materials and element structures constituting the display device will be described in detail.

[0152] Since the signal line drive circuit is provided on the support portion, it does not particularly need to have flexibility. Therefore, as the signal line drive circuit, it is preferable to use a semiconductor integrated circuit chip (IC) using a semiconductor substrate (semiconductor wafer) capable of high-speed operation. As the semiconductor substrate, a single crystal semiconductor substrate and a polycrystalline semiconductor substrate can be used, and semiconductor wafers such as silicon wafers and germanium wafers, and compound semiconductor wafers such as gallium arsenide and indium phosphide can be applied.

[0153] In addition, a substrate having an SOI structure in which a single crystal semiconductor layer is provided on an insulating surface ( SOI substrate) may be used for the signal line drive circuit. The SOI substrate is formed using the SIMOX (Separation by IMplanted Oxygen) method or the Smart-Cut method. It is possible. The SIMOX method involves implanting oxygen ions into a single-crystalline silicon substrate to form an oxygen-containing layer at a predetermined depth, followed by heat treatment to form a buried insulating layer at a certain depth from the surface, and then forming a single-crystalline silicon layer on top of the buried insulating layer. Also, the Smart-Cut method involves implanting hydrogen ions into an oxidized single-crystalline silicon substrate to form a hydrogen-containing layer at a location corresponding to a desired depth, bonding it to another semiconductor substrate (such as a single-crystalline silicon substrate having a silicon oxide film for bonding on the surface), and performing heat treatment to cleave the single-crystalline silicon substrate at the hydrogen-containing layer, thereby forming a stack of a silicon oxide film and a single-crystalline silicon layer on the semiconductor substrate. After forming the oxygen-containing layer, heat treatment is carried out to form a buried insulating layer at a certain depth from the surface, and a single-crystalline silicon layer is formed on top of the buried insulating layer. It is a method of forming a single-crystalline silicon layer on top of the buried insulating layer. Also, the Smart-Cut method involves implanting hydrogen ions into an oxidized single-crystalline silicon substrate to form a hydrogen-containing layer at a location corresponding to a desired depth, bonding it to another semiconductor substrate (such as a single-crystalline silicon substrate having a silicon oxide film for bonding on the surface), and performing heat treatment to cleave the single-crystalline silicon substrate at the hydrogen-containing layer, thereby forming a stack of a silicon oxide film and a single-crystalline silicon layer on the semiconductor substrate. It is a method of forming a stack of a silicon oxide film and a single-crystalline silicon layer on the semiconductor substrate.

[0154] As semiconductor elements provided in the circuit section of the display device, not only field-effect transistors but also memory (storage) elements using a conductor layer can be applied, and a semiconductor integrated circuit that satisfies functions required for a wide range of applications can be provided. There is no particular limitation on the method as long as the scanning line driving circuit and the display section are provided on the flexible substrate of the display panel. The scanning line driving circuit and the display section may be directly formed on the flexible substrate, or may be fabricated on another fabrication substrate and then only the element layer may be transferred to the flexible substrate using a peeling method. For example, the scanning line driving circuit and the display section can be formed on the fabrication substrate in the same process and then transferred and provided on the flexible substrate of the display panel. In this case, since the scanning line driving circuit and the display section are formed in the same process, it is preferable to use transistors having the same structure and material to reduce costs. Therefore, the channel layers of the transistors constituting the scanning line driving circuit and the display section are provided with the same material.

[0155] There is no particular limitation on the method as long as the scanning line driving circuit and the display section are provided on the flexible substrate of the display panel. The scanning line driving circuit and the display section may be directly formed on the flexible substrate, or may be fabricated on another fabrication substrate and then only the element layer may be transferred to the flexible substrate using a peeling method. For example, the scanning line driving circuit and the display section can be formed on the fabrication substrate in the same process and then transferred and provided on the flexible substrate of the display panel. In this case, since the scanning line driving circuit and the display section are formed in the same process, it is preferable to use transistors having the same structure and material to reduce costs. Therefore, the channel layers of the transistors constituting the scanning line driving circuit and the display section are provided with the same material. The scanning line driving circuit and the display section may be directly formed on the flexible substrate, or may be fabricated on another fabrication substrate and then only the element layer may be transferred to the flexible substrate using a peeling method. For example, the scanning line driving circuit and the display section can be formed on the fabrication substrate in the same process and then transferred and provided on the flexible substrate of the display panel. In this case, since the scanning line driving circuit and the display section are formed in the same process, it is preferable to use transistors having the same structure and material to reduce costs. Therefore, the channel layers of the transistors constituting the scanning line driving circuit and the display section are provided with the same material. For example, the scanning line driving circuit and the display section can be formed on the fabrication substrate in the same process and then transferred and provided on the flexible substrate of the display panel. In this case, since the scanning line driving circuit and the display section are formed in the same process, it is preferable to use transistors having the same structure and material to reduce costs. Therefore, the channel layers of the transistors constituting the scanning line driving circuit and the display section are provided with the same material. Therefore, the channel layers of the transistors constituting the scanning line driving circuit and the display section are provided with the same material. ​​​

[0156] Alternatively, it may be transferred from the production substrate to a flexible support substrate and provided by adhering it to the substrate of the display panel together with the flexible support substrate. For example, a plurality of only scanning line driving circuits are formed on the production substrate, transferred to the flexible support substrate, and then divided into individual scanning line driving circuits together with the flexible support substrate, and the scanning line driving circuits provided on the flexible support substrate as required for one display panel are adhered and provided. In this case, since the scanning line driving circuit and the display unit are manufactured in separate processes, transistors of various configurations and materials can be selected.

[0157] Alternatively, the above transfer method and the direct formation method may be combined. For example, wiring for electrically connecting the display unit, the scanning line driving circuit unit, the FPC, etc. may be directly formed on the flexible substrate of the display panel using a printing method or the like.

[0158] The production substrate may be appropriately selected according to the production process of the element layer. For example, as the production substrate, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, a metal substrate having an insulating layer formed on the surface, etc. can be used. Further, a plastic substrate having heat resistance capable of withstanding the processing temperature may be used.

[0159] As the flexible substrate, an aramid resin, a polyethylene naphthalate (PEN) resin, a polyethersulfone (PES) resin, a polyphenylene sulfide (PPS) resin, a polyimide (PI) resin, etc. can be used. Further, a prepreg having a structure in which fibers are impregnated with an organic resin may be used.

[0160] The method of transferring the element layer from the production substrate to another substrate is not particularly limited, and various methods can be used. ​​​​​​​​​​​​For example, a separation layer may be formed between the formation substrate and the element layer.

[0161] In this specification, the element layer refers to not only the semiconductor element layer provided on the element substrate side, but also the opposing This also includes the counter electrode layer provided on the substrate side. Therefore, the peeling process is performed on both the element base side and the sealing substrate side. In addition, in consideration of the simplicity of the process, the substrate is transferred to a flexible substrate. After that, the flexible substrate is temporarily attached to a glass substrate or the like in the manufacturing process, and the manufacturing process is continued. It is also possible.

[0162] The release layer is formed by sputtering, plasma CVD, coating, printing, etc. W, Molybdenum (Mo), Titanium (Ti), Tantalum (Ta), Niobium (Nb), Nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium Ru, Rh, Palladium (Pd), Os, Iridium (Ir), silicon (Si), or an alloy material mainly composed of the element, or A layer made of a compound material containing the above element as a main component is formed as a single layer or a laminate. The crystal structure of the layer may be amorphous, microcrystalline, or polycrystalline. Fabrication methods include spin coating, droplet ejection, and dispensing.

[0163] When the release layer has a single-layer structure, it is preferably a tungsten layer, a molybdenum layer, or a tungsten layer. A layer containing a mixture of tungsten and molybdenum is formed. Alternatively, a layer containing tungsten oxide or oxide A layer containing a nitride, a layer containing an oxide or oxynitride of molybdenum, or a layer containing tungsten and A layer containing a mixture of oxide or oxynitride of molybdenum is formed. The mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum.

[0164] When the release layer has a laminated structure, preferably, a layer containing a tungsten layer, a molybdenum layer, or a mixture of tungsten and molybdenum is formed as the first layer, and as the second layer, tungsten, molybdenum, or an oxide, nitride, oxynitride, or nitroxide of a mixture of tungsten and molybdenum is formed.

[0165] When forming a laminated structure of a layer containing tungsten and a layer containing an oxide of tungsten as the release layer a layer containing tungsten is formed, and an insulating layer formed of an oxide is formed on the upper layer thereof so that a layer containing an oxide of tungsten is formed at the interface between the tungsten layer and the insulating layer. Furthermore, the surface of the layer containing tungsten may be treated by heat oxidation treatment, oxygen plasma treatment, treatment with a solution having a strong oxidizing power such as ozone water, etc. to form a layer containing an oxide of tungsten. Also, the plasma treatment and the heat treatment may be performed in an atmosphere of oxygen, nitrogen, dinitrogen monoxide, or a mixed gas atmosphere of the above gas and other gases. This is the same when forming a layer containing a nitride, oxynitride, and nitroxide of tungsten. After forming a layer containing tungsten, a silicon nitride layer, an oxynitride silicon layer, or a nitroxide silicon layer may be formed on the upper layer thereof.

[0166] In addition, the transfer process to another substrate is to form a release layer between the substrate and the element layer, provide a metal oxide film between the release layer and the element layer, weaken the metal oxide film by crystallization, and peel off the element layer. Another method is to provide an amorphous silicon film containing hydrogen between a substrate with high heat resistance and the element layer, and use a laser beam. By removing the amorphous silicon film by irradiation or etching, the element layer is peeled off. Method: A release layer is formed between the substrate and the element layer, and a metal oxide film is provided between the release layer and the element layer. The metal oxide film is weakened by crystallization, and a part of the release layer is removed by etching with a solution, NF3, BrF3, Cl F3 or other halogen fluoride gases, and then peeled off on the weakened metal oxide film. Method of peeling: The substrate on which the element layer is formed is mechanically removed or removed by etching with a solution, NF3, BrF 3, ClF3 or other halogen fluoride gases can be used as appropriate. In addition, a film containing nitrogen, oxygen, hydrogen, etc. (for example, an amorphous silicon film containing hydrogen, a hydrogen-containing alloy film, an oxygen-containing alloy film, etc.) can be used as the release layer, and the release layer is irradiated with a laser beam. To release nitrogen, oxygen, or hydrogen contained in the release layer as a gas to promote the peeling of the element layer from the substrate. This method may be used.

[0167] By combining the above peeling methods, the transfer process can be performed more easily. That is, irradiation with a laser beam, etching of the release layer with a gas or solution, mechanical removal with a sharp knife or scalpel, etc. After making the release layer and the element layer in a state where they are easy to peel off, peeling can also be performed by a physical force (such as by a machine).

[0168] Alternatively, a liquid may be infiltrated into the interface between the release layer and the element layer to peel the element layer from the substrate. Water or the like can be used as the liquid.

[0169] The transistors included in the display device disclosed in this specification are not particularly limited. Therefore, various transistor structures and semiconductor materials used can be used.

[0170] An example of the structure of a thin film transistor will be described with reference to FIG. 15. FIG. 15 shows the structure of a thin film transistor according to the fifth embodiment. 4 is an example of a thin film transistor that can be used as the thin film transistor 4010 in the semiconductor device.

[0171] In FIG. 15(A) to (D), an insulating film 4023 is formed on an element substrate 4331. Thin film transistors 4010a, 410b, 4010c, and 4010d are provided on the insulating film 4023. The thin film transistors 4010a, 4010b, 4010c, and 4010d are Insulating layers 4020 and 4021 are formed, and thin film transistors 4010a and 4010b are formed. , 4010c, and 4010d.

[0172] The thin film transistor 4010a is a thin film transistor 4010 shown in FIG. The wiring layers 405a and 405b functioning as a source electrode layer and a drain electrode layer and the semiconductor layer 40 3 is in contact with the n+ layer without an intervening n+ layer.

[0173] The thin film transistor 4010a is an inverted staggered thin film transistor having an insulating surface. On an element substrate 4331 and an insulating film 4023, a gate electrode layer 401 and a gate insulating layer 402, a semiconductor layer 403, and a wiring layer 405 functioning as a source electrode layer or a drain electrode layer. Includes a, 405b.

[0174] The thin film transistor 4010b is a bottom-gate type thin film transistor having an insulating surface. A gate electrode layer 401 and a gate insulating layer 4023 are formed on an element substrate 4331, which is a substrate to be used as a gate insulating layer. An edge layer 402, wiring layers 405a and 405b functioning as source and drain electrode layers, , which function as a source region or a drain region +Layers 404a, 404b, and the semiconductor layer include 403. n + Layers 404a and 404b are semiconductor layers with lower resistance than the semiconductor layer 403 . Also, an insulating layer 4020 that covers the thin-film transistor 4010b and is in contact with the semiconductor layer 403 is provided.

[0175] Note that n + Layers 404a and 404b may be provided between the gate insulating layer 402 and the wiring layers 405a and 405b. Also, n It may be structured such that the n + layer is provided between the gate insulating layer and the wiring layer, and between the wiring layer and the semiconductor layer.

[0176] The thin-film transistor 4010b has a gate insulating layer 402 throughout the region including the thin-film transistor 4010b, and a gate electrode layer 401 is provided between the gate insulating layer 402 and the element substrate 4331 having an insulating surface. Wiring layers 405a and 405b, and n layers 404a and 404b are provided on the gate insulating layer 402. Then, a semiconductor layer 403 is provided on the gate insulating layer 402, the wiring layers 405a and 405b, and the n + layers 404a and 404b. Also, although not shown, in addition to the wiring layers 405a and 405b, there is a wiring layer on the gate insulating layer 402, and the wiring layer extends outside the outer peripheral portion of the semiconductor layer 403. n + layers 404a and 404b. And a semiconductor layer 403 is provided on the gate insulating layer 402, the wiring layers 405a and 405b, and the n layers 404a and 404b. Also, although not shown, in addition to the wiring layers 405a and 405b, there is a wiring layer on the gate insulating layer 402, and the wiring layer extends outside the outer peripheral portion of the semiconductor layer 403.

[0177] The thin-film transistor 4010c has a configuration in which, in the thin-film transistor 4010b, the source electrode layer and the drain electrode layer are in contact with the semiconductor layer without passing through the n + layer.

[0178] The thin film transistor 4010c has a gate insulating layer 402 in all regions including the thin film transistor 4010c, and a gate electrode layer 401 is provided between the gate insulating layer 402 and the element substrate 4331 which is a substrate having an insulating surface. Wiring layers 405a and 405b are provided on the gate insulating layer 402. Then, a semiconductor layer 403 is provided on the gate insulating layer 402, the wiring layer 405a, and 405b. Although not shown, in addition to the wiring layers 405a and 405b, there is a wiring layer on the gate insulating layer 402, and the wiring layer extends outside the outer peripheral portion of the semiconductor layer 403. The thin film transistor 4010d is a top gate type thin film transistor. The thin film transistor 4010d is an example of a planar type thin film transistor. On an element substrate 4331 having an insulating surface and an insulating film 4023, a semiconductor layer 403 including n layers 404a and 404b functioning as a source region or a drain region, a gate insulating layer 402 is formed on the semiconductor layer 403, and a gate electrode layer 401 is formed on the gate insulating layer 402. Also, wiring layers 405a and 405b functioning as a source electrode layer or a drain electrode layer are formed in contact with the n layers 404a and 404b. The n layers 404a and 404b are semiconductor regions having a lower resistance than the semiconductor layer 403. In this embodiment, although a single gate structure has been described, a multi-gate such as a double gate structure can also be used. It is also possible to use a top gate type sequential staggered thin film transistor as the thin film transistor. On the gate insulating layer 402, in addition to the wiring layers 405a and 405b, there is a wiring layer, and the wiring layer extends outside the outer peripheral portion of the semiconductor layer 403.

[0179] The thin film transistor 4010d is a top gate type thin film transistor. The thin film transistor 4010d is an example of a planar type thin film transistor. On an element substrate 4331 having an insulating surface, n + layers 404a, 404b, a semiconductor layer 403 including the n layers 404a and 404b, a gate insulating layer 4 02 is formed on the semiconductor layer 403, and a gate electrode layer 401 is formed on the gate insulating layer 402. Also, n + layers 404a, 404b, and wiring layers 405a, 405b functioning as a source electrode layer or a drain electrode layer in contact with the n layers 404a, 404b are formed. n + layers 404a, 404b are semiconductor regions having a lower resistance than the semiconductor layer 403.

[0180]

[0181] In this embodiment, a single gate structure has been described, but a multi-gate such as a double gate structure A gate structure may also be used. In this case, a structure in which gate electrode layers are provided above and below the semiconductor layer is also acceptable, and a structure in which a plurality of gate electrode layers are provided only on one side (above or below) of the semiconductor layer may also be used.

[0182] The semiconductor material used for the semiconductor layer is not particularly limited. Examples of materials that can be used for the semiconductor layer of a thin film transistor will be described.

[0183] The material for forming the semiconductor layer of the semiconductor element is an amorphous (amorphous, hereinafter also referred to as "AS") semiconductor produced by a vapor phase growth method or a sputtering method using a semiconductor material gas typified by silane or germanium, or the amorphous semiconductor is crystallized using light energy or thermal energy to obtain a polycrystalline semiconductor, or a microcrystalline (also called semi-amorphous or microcrystalline, hereinafter also referred to as "SAS") semiconductor can be used. The semiconductor layer can be formed by a sputtering method, an LPCVD method, a plasma CVD method, or the like.

[0184] Considering the Gibbs free energy, the microcrystalline semiconductor film belongs to an intermediate metastable state between amorphous and single crystal. That is, it is a semiconductor having a third state that is stable in terms of free energy, having short-range order and lattice strain. Columnar or needle-like crystals grow in the normal direction with respect to the substrate surface. The Raman spectrum of microcrystalline silicon, which is a representative example of microcrystalline semiconductors, is shifted to the lower wavenumber side than 520 cm which indicates single crystal silicon. That is, there is a peak in the Raman spectrum of microcrystalline silicon between 520 cm indicating single crystal silicon and 480 cm indicating amorphous silicon. -1 That is, there is a peak in the Raman spectrum of microcrystalline silicon between 520 cm -1 indicating single crystal silicon and 480 cm -1 indicating amorphous silicon. Also, dangling bonds​​​​​ To terminate the ring bond), at least 1 atomic % or more of hydrogen or halogen is included. Furthermore, by including noble gas elements such as helium, argon, krypton, neon, etc., lattice strain is further promoted, resulting in an increase in stability and a good microcrystalline semiconductor film being obtained. .

[0185] This microcrystalline semiconductor film can be formed by a high-frequency plasma CVD method with a frequency in the range of several tens of MHz to several hundreds of MHz, or by a microwave plasma CVD apparatus with a frequency of 1 GHz or higher. . Typically, it can be formed by diluting silicon hydrides such as SiH4, Si2H6, SiH2Cl2, SiHCl3, SiCl4, SiF4, etc. with hydrogen. Also, in addition to silicon hydrides and hydrogen, a microcrystalline semiconductor film can be formed by diluting with one or more noble gas elements selected from helium, argon, krypton, and neon. At this time, the flow rate ratio of hydrogen to silicon hydride is 5 times or more and 200 times or less, preferably 50 times or more and 150 times or less, and more preferably 100 times.

[0186] Typical examples of amorphous semiconductors include hydrogenated amorphous silicon, and typical examples of crystalline semiconductors include polysilicon, etc. Polysilicon (polycrystalline silicon) includes so-called high-temperature polysilicon formed using polysilicon formed through a process temperature of 800 °C or higher as the main material, so-called low-temperature polysilicon formed using polysilicon formed at a process temperature of 600 °C or lower as the main material, and also includes polysilicon obtained by crystallizing amorphous silicon using elements that promote crystallization, etc. Of course, as described above, it is also possible to use a microcrystalline semiconductor or a semiconductor containing a crystalline phase in a part of the semiconductor layer.

[0187] In addition to single substances such as silicon (Si) and germanium (Ge) as semiconductor materials compound semiconductors such as GaAs, InP, SiC, ZnSe, GaN, SiGe, etc. can also be used as well.

[0188] When a crystalline semiconductor film is used for the semiconductor layer, the method for fabricating the crystalline semiconductor film can be various methods (laser crystallization method, thermal crystallization method, or thermal crystallization method using an element that promotes crystallization such as nickel, etc.). Also, a microcrystalline semiconductor that is SAS can be irradiated with a laser to crystallize and its crystallinity can be enhanced. When an element that promotes crystallization is not introduced, before irradiating an amorphous silicon film with a laser beam, it is heated at 500 °C for 1 hour in a nitrogen atmosphere to release the hydrogen concentration of the amorphous silicon film to 1×10 atoms / cm or less. 20 atoms / cm 3 This is because when a laser beam is irradiated on an amorphous silicon film containing a large amount of hydrogen, the amorphous silicon film will be damaged and destroyed.

[0189] As for the method of introducing a metal element into the amorphous semiconductor layer, there is no particular limitation as long as it is a method that can make the metal element present on the surface or inside of the amorphous semiconductor film. For example, sputtering method, CVD method, plasma treatment method (including plasma CVD method), adsorption method, method of applying a solution of a metal salt can be used. Among these, the method using a solution is simple and useful in that the concentration of the metal element can be easily adjusted . Also, at this time, the wettability of the surface of the amorphous semiconductor film is improved and an aqueous solution is spread over the entire surface of the amorphous semiconductor film. Therefore, irradiation with UV light in an oxygen atmosphere , thermal oxidation method, treatment with ozone water or hydrogen peroxide containing hydroxyl radicals, etc. can be performed to achieve this. ​It is desirable to form an oxide film.

[0190] In addition, in the crystallization step of crystallizing the amorphous semiconductor film to form a crystalline semiconductor film, an element that promotes crystallization (also referred to as a catalyst element or a metal element) is added to the amorphous semiconductor film, and crystallization may be performed by heat treatment (at 550 °C to 750 °C for 3 minutes to 24 hours). As the element that promotes (facilitates) crystallization, one or more selected from iron (Fe), nickel (Ni), cobalt (Co), ruthenium (Ru ), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir) ), platinum (Pt), copper (Cu), and gold (Au) can be used. ) To remove or reduce the element that promotes crystallization from the crystalline semiconductor film, a semiconductor film containing an impurity element is formed in contact with the crystalline semiconductor film to function as a gettering sink. As the impurity element, an impurity element that imparts an n-type, an impurity element that imparts a p-type, a noble gas element, etc. can be used. For example, phosphorus (P), nitrogen (N), arsenic (As), antimony ( )

[0191] Sb), bismuth (Bi), boron (B), helium (He), neon (Ne), argon ( Ar), Kr (krypton), Xe (xenon), one or more selected from these can be used. A semiconductor film containing a noble gas element is formed on the crystalline semiconductor film containing the element that promotes crystallization, and heat treatment (at 550 °C to 750 °C for 3 minutes to 24 hours) is performed. The element that promotes crystallization contained in the crystalline semiconductor film moves into the semiconductor film containing the noble gas element, and the element that promotes crystallization in the crystalline semiconductor film is removed or reduced. Then, the semiconductor film containing the noble gas element that has become a gettering sink is removed.

[0192] The crystallization of the amorphous semiconductor film may combine heat treatment and crystallization by laser light irradiation, and heat treatment or laser light irradiation may be performed alone or multiple times.

[0193] In addition, the crystalline semiconductor film may be directly formed on the substrate by a plasma method. Also, the plasma method may be used to selectively form the crystalline semiconductor film on the substrate.

[0194] An oxide semiconductor may also be used for the semiconductor layer. For example, zinc oxide (ZnO), tin oxide (SnO2), etc. can also be used. When ZnO is used for the semiconductor layer, the gate insulating layer is made of Y2O3, Al2O3, TiO2, a laminate thereof, etc., and for the gate electrode layer, source electrode layer, and drain electrode layer, ITO, Au, Ti, etc. can be used. Also, In, Ga, etc. can be added to ZnO.

[0195] As the oxide semiconductor, a thin film represented by InMO3(ZnO) m (m>0) can be used. Here, M represents one metal element or a plurality of metal elements selected from gallium (Ga), iron (Fe), nickel (Ni), manganese (M n), and cobalt (Co). For example in addition to the case where M is Ga, there may be cases where M contains the above-mentioned metal elements other than Ga, such as Ga and Ni or Ga and Fe. Also, in the above oxide semiconductor, in addition to the metal elements contained as M, there are those that contain Fe, Ni, other transition metal elements, or oxides of the transition metals as impurity elements. For example, an In-Ga-Zn-O-based non-single crystal film can be used as the oxide semiconductor layer.

[0196] oxide semiconductor layer (InMO3(ZnO) m ​(m > 0) As the film, an In-Ga-Zn-O system Instead of the non-single crystal film, InMO3(ZnO) with M being another metal element m (m > 0) film may be used. Also, in addition to the above, as the oxide semiconductor applied to the oxide semiconductor layer, In -Sn-Zn-O system, In-Al-Zn-O system, Sn-Ga-Zn-O system, Al-Ga- Zn-O system, Sn-Al-Zn-O system, In-Zn-O system, Sn-Zn-O system, Al-Z n-O system, In-O system, Sn-O system, ZnO system oxide semiconductors can be applied .

[0197] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments .

Claims

[Claim 1] A first resin and a second resin; a display portion having a first transistor; a first scanning line driver circuit having a second transistor; a second scanning line driver circuit having a third transistor; a signal line driver circuit having a fourth transistor; In cross section, the first transistor has a region located between the first resin and the second resin; each of the second transistor and the third transistor has a region located between the first resin and the second resin; the fourth transistor is not located between the first resin and the second resin; the first resin has a function of bending in a first region overlapping with the display unit and in a second region between the second transistor and the third transistor; the first scanning line driving circuit and the second scanning line driving circuit are arranged to extend in a first direction, A display device, wherein the first region extends in a direction intersecting the first direction.

Images