Power semiconductor module and power conversion device including the same

Abstract

To provide a power semiconductor module capable of preventing defective assembly and thermal, mechanical, and electrical reliability problems due to height tolerance (tolerance) of components in the power semiconductor module, a manufacturing method thereof, and a power conversion device.SOLUTION: A power semiconductor module 501 may include a first substrate 210, a power semiconductor element 100 bonded to the first substrate, a second substrate 220 bonded to the power semiconductor element, a heat dissipation post 310 bonded to the second substrate, and a molding member 320 surrounding the first substrate, the power semiconductor element, the second substrate, and the heat dissipation post. The upper surface of the heat dissipation post can be exposed through the molding member. The height of the upper surface of the head dissipation post may be the same as the height of the upper surface of the molding member. The heat dissipation post can overlap the power semiconductor element above and below.SELECTED DRAWING: Figure 4

Description

Technical Field

[0001] The embodiments relate to a power semiconductor module, a method for manufacturing the same, and a power conversion device including the same.

Background Art

[0002] A power conversion module is a device that performs power conversion (AC->DC, DC->AC), power transformation (step-down, step-up), power distribution, or power control functions. It is a core component that improves energy efficiency in the power transmission and control process and controls voltage changes to provide system stability and reliability. It is also referred to as a power module or a power system.

[0003] The power conversion module includes various components such as power semiconductor elements, heat dissipation substrates, base plates, molding silicon, cases and covers, terminals, etc.

[0004] Recently, eco-friendly vehicles based on electricity or hydrogen have been in the spotlight instead of internal combustion engine vehicles based on fossil fuels. A large number of power semiconductor elements are used in such eco-friendly vehicles. Eco-friendly vehicles include hybrid electric vehicles (HEV), plug-in hybrid electric vehicles (PHEV), electric vehicles (EV), fuel cell electric vehicles (PCEV), etc.

[0005] In addition, power semiconductors are being used in various electrical and electronic devices such as electric vehicle chargers, energy storage devices, power supply devices, or railways, in addition to eco-friendly vehicles.

[0006] Conventionally, silicon (Si) power semiconductor elements have been widely used. However, Si power semiconductors have reached their physical limits, and active research is being conducted on wide bandgap (WBG) power semiconductors such as silicon carbide (SiC) or gallium nitride (GaN) to replace them.

[0007] The WBG power semiconductor device has a bandgap energy approximately three times that of the Si power semiconductor device, a breakdown electric field approximately ten times higher than that of the Si power semiconductor device, and a thermal conductivity approximately three times or more higher than that of the Si power semiconductor device. Due to such excellent characteristics, it can operate in a high-temperature and high-voltage environment, has a high switching speed, and has the advantage of low switching losses.

[0008] For example, the Si-based power semiconductor module conventionally used for power conversion (DC⇔AC), motor drive switching, control, etc. in electric vehicles, hybrid electric vehicles, etc. was driven in a temperature environment of around 150°C. However, recently, due to the requirements for increased switching performance and power density, research on power semiconductor devices based on wide bandgap (WBG) such as SiC or GaN that can operate at a use temperature of 300°C or higher, for example, around 300 - 700°C, has been actively conducted.

[0009] On the other hand, the heat generated from the power semiconductor generates thermo-mechanical stress in each part of the power semiconductor module, and the life of the joint and the power semiconductor device deteriorates due to thermal fatigue at the joint. Therefore, reliable design of the power semiconductor module to appropriately release the heat generated in the power semiconductor device through the heat dissipation substrate and maintain the junction temperature of the power semiconductor device below the appropriate temperature is very important.

[0010] On the other hand, the heat dissipation substrate for the power semiconductor not only functions to transfer the heat generated during the operation of the power semiconductor device to the outside, but also has a circuit pattern formed on one surface of the heat dissipation substrate, which plays an important role in electrically connecting the power semiconductor devices.

[0011] Conventionally, heat dissipation substrates for power semiconductors can be classified into a DBC (direct bonded copper) method and an AMB (active metal brazing) method according to the bonding method. The DBC method is a method of directly bonding to a ceramic after forming an oxide film on a copper (Cu) layer. The AMB method is a method of performing brazing with a paste containing metal particles with a relatively low melting point between a metal as a base material and a ceramic as an intermediate material.

[0012] By the way, recently, for the performance improvement of hybrid and electric vehicles and autonomous driving vehicles, 1200V, 200A-class high-voltage / high-power SiC power conversion modules are being used. During the operation of such high-performance electric vehicles, the operating temperature of power semiconductor elements is required to be realized at an average of 300°C or higher, and it is facing an ultra-high temperature operating state where the instantaneous maximum operating temperature is 350°C or higher.

[0013] In such an ultra-high temperature, high-voltage, and high-current operating environment, the existing bonding material itself may re-melt, and a heat trap phenomenon occurs due to pores present in the joint, rapidly deteriorating the life of the power semiconductor module.

[0014] For example, cracks may occur due to defects induced at the interface between the ceramic substrate and the copper (Cu) sheet of the heat dissipation substrate. Cracks induced in such a heat dissipation substrate will induce thermal runaway and lead to the destruction of the power semiconductor element.

[0015] For example, when the heat dissipation performance decreases due to cracks or the like in the heat dissipation substrate, the temperature of the power semiconductor module case and its surroundings will increase. At this time, if heat generation exceeds the heat dissipation performance due to a rapid temperature rise (heat generation state > heat dissipation performance), the heat balance state (heat generation state < heat dissipation performance) by thermal design cannot be maintained, and heat generation will continuously increase. As a result, the leakage current will continuously increase, and ultimately the power semiconductor module itself will be destroyed.

[0016] In particular, when the degradation problem of the power semiconductor module occurs in an ultra-high temperature operating temperature environment, the destruction of the power semiconductor element due to the malfunction of the power semiconductor module mounted on the vehicle has a problem of seriously affecting the safety of the driver.

[0017] FIG. 1 is an external photograph of a power semiconductor module package according to the prior art.

[0018] There is a DSC (Dual Side Cooling) technology in the power semiconductor module according to the prior art.

[0019] In the conventional DSC power semiconductor module, the gate electrode and the source electrode of the power semiconductor element are flip-chip bonded to the upper heat dissipation substrate and the lower heat dissipation substrate respectively so that they face the heat dissipation substrate. Also, a spacer structure is interposed and bonded under the drain electrode of the power semiconductor element.

[0020] By the way, according to the prior art, when the power semiconductor element and the spacer structure are stacked together, a height tolerance of the module occurs, and when pressure is applied by a press jig (not shown), there is a problem that damage to the components may occur.

[0021] Also, according to the prior art, there is a problem that thermal or mechanical reliability problems may occur between components due to height variations between components.

[0022] Also, according to the prior art, there is a possibility that an appearance defect (Mold flash: MF) may occur during EMC Transfer Molding due to the height tolerance of the module.

[0023] On the one hand, when modularized in a state where there are thermal or mechanical reliability problems between components, there is a risk that the degradation problem of the power semiconductor module will occur rapidly in an ultra-high temperature operating temperature environment close to 300°C, and there is a problem that it will seriously affect the safety of the driver due to the destruction of the power semiconductor element caused by malfunction of the power semiconductor module mounted on the vehicle.

[0024] On the other hand, since the power semiconductor module used in an inverter of an electric vehicle or the like performs a high-speed switching operation in a state where a plurality of power semiconductor elements are arranged in series or in parallel, electromagnetic interference (EMI) occurs inside the power semiconductor module, or electromagnetic noise is generated from the outside, which may cause problems with electromagnetic susceptibility (EMS).

[0025] On the other hand, when a malfunction occurs in the high-speed switching of the power semiconductor element due to EMI or EMS problems in the power semiconductor module mounted on the vehicle, there is a problem that it will seriously affect the safety of the driver.

Summary of the Invention

Problems to be Solved by the Invention

[0026] One of the technical problems of the embodiment is to provide a power semiconductor module, a manufacturing method thereof, and a power conversion device including the same, which can prevent assembly defects and thermal, mechanical, and electrical reliability problems due to the height tolerance of the components of the power semiconductor module.

[0027] Another technical problem of the embodiment is to provide a power semiconductor module, a manufacturing method thereof, and a power conversion device including the same, which can prevent problems in which a malfunction occurs in the high-speed switching of the power semiconductor element due to EMI or EMS problems in the power semiconductor module.

[0028] The technical problems of the embodiments are not limited to those described in this item, but include those that can be understood from the description of the invention.

Means for Solving the Problems

[0029] The power semiconductor module according to the embodiment may include a first substrate 210, a power semiconductor element 100 bonded onto the first substrate 210, a second substrate 220 bonded onto the power semiconductor element 100, a heat dissipation post 310 bonded onto the second substrate 220, and a molding member 320 surrounding the first substrate 210, the power semiconductor element 100, the second substrate 220, and the heat dissipation post 310.

[0030] The upper surface of the heat dissipation post 310 can be exposed from the upper surface of the molding member 320.

[0031] The height of the upper surface of the heat dissipation post 310 may be the same as the height of the upper surface of the molding member 320.

[0032] The heat dissipation post 310 can overlap vertically with the power semiconductor element.

[0033] The heat dissipation post 310 may be grounded.

[0034] The second substrate 220 includes a metal plate, and the metal plate of the second substrate may be grounded.

[0035] The power semiconductor element includes a first power semiconductor element and a second power semiconductor element that are spaced apart and arranged on the first substrate. The second substrate 220 may include a second-1 substrate bonded onto the first power semiconductor element and a second-2 substrate that is spaced apart from the second-1 substrate and bonded onto the second power semiconductor element.

[0036] The power semiconductor device includes a first power semiconductor device and a second power semiconductor device that are spaced apart on the first substrate. The second substrate 220 includes a second-2 substrate that is bonded onto the second power semiconductor device, and a second-3 substrate that is spaced apart from the second-2 substrate and is bonded onto the first power semiconductor device. A conductive member 190 can be further included between the first substrate and the second-3 substrate.

[0037] The molding member includes a molding recess 320R on its upper surface, and the side surface of the heat dissipation post 310 can be exposed by the molding recess 320R.

[0038] The gate electrode of the power semiconductor device is electrically connected to the first substrate by a wire.

[0039] The upper surface of the heat dissipation post may be higher than the upper surface of the molding member.

[0040] The heat dissipation post 320P protruding higher than the upper surface of the molding member can include a third-1 heat dissipation post 313a disposed inside the molding member and a third-2 heat dissipation post 313b disposed outside the molding member.

[0041] The power conversion device according to the embodiment can include any one of the power semiconductor modules.

Advantages of the Invention

[0042] According to the embodiment, there is a technical effect of preventing assembly defects and thermal, mechanical, and electrical reliability problems due to height tolerances of components of the power semiconductor module.

[0043] For example, according to the embodiment, a power semiconductor device is disposed between the first substrate 210 and the second substrate 220, and an additional structure such as a separate spacer is omitted, thereby having a technical effect of preventing assembly defects due to height tolerances of components of the power semiconductor module.

[0044] Further, according to the embodiment, a power semiconductor element is disposed between the first substrate 210 and the second substrate 220, and an additional structure such as a separate spacer is omitted, so that the pressure applied to the power semiconductor element and the substrate during the crimping process by the press jig can be reduced, and there is a technical effect of preventing thermal, mechanical, and electrical reliability problems.

[0045] Further, according to the embodiment, the heat dissipation performance is improved by disposing heat dissipation posts at positions corresponding to the vertical direction of the power semiconductor element in consideration of the heat dissipation distribution on the substrate.

[0046] Further, according to the embodiment, there is a technical effect of preventing problems in which malfunction occurs in high-speed switching of the power semiconductor element due to EMI or EMS problems in the power semiconductor module.

[0047] For example, according to the embodiment, a heat dissipation post made of a metal material having a function of electrostatic shielding or electromagnetic wave shielding is disposed at a position overlapping the power semiconductor element in the vertical direction, so that there is a technical effect of preventing problems in which malfunction occurs in high-speed switching of the power semiconductor element due to EMI or EMS problems in the power semiconductor module.

[0048] For example, according to the embodiment, a heat dissipation post made of a metal material having a function of electrostatic shielding or electromagnetic wave shielding is disposed at a position overlapping the power semiconductor element in the vertical direction, and the second plate 220c of the second substrate 220 in contact with the heat dissipation post or the heat dissipation post is grounded, so that there is a special technical effect of preventing problems in which malfunction occurs in high-speed switching of the power semiconductor element due to EMI or EMS problems in the power semiconductor module.

[0049] Further, according to the embodiment, after overcoating up to a position higher than the heat dissipation post 310 and then grinding G, a molding member is formed such that the heat dissipation post 310 is exposed, thereby preventing the occurrence of appearance defects in the EMC molding.

[0050] In addition, in the embodiment, the height of the heat dissipation post can be controlled in consideration of the product specifications, and thereafter, by performing the molding process, there is a technical effect that the thickness and height of the product specifications can be accurately controlled.

[0051] The technical effects of the embodiment are not limited to those described in this item, and include those that can be grasped from the description of the invention.

Brief Description of the Drawings

[0052]

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Best Mode for Carrying Out the Invention

[0053] Hereinafter, with reference to the drawings, the invention according to the embodiments for solving the above problems will be described in more detail.

[0054] In the following description, the suffixes "module" and "section" for the components used are merely given or mixed for the purpose of facilitating the creation of this specification, and do not themselves confer any particularly important meaning or role. Therefore, the "module" and "section" can also be mixed with each other.

[0055] Terms including ordinal numbers such as first, second, etc. can be used to describe various components, but the components are not limited by the terms. The terms are used only for the purpose of distinguishing one component from another.

[0056] Singular expressions include plural expressions unless clearly limited in context.

[0057] In this application, terms such as "including", "having", or "comprising" are intended to specify the presence of the features, numbers, steps, operations, components, parts, or combinations thereof described in the specification, and are not to be construed as precluding the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0058] In the embodiment, the power semiconductor module can be used in inverters, converters, etc. of automobiles, computers, home appliances, solar power, smart grids, etc. Further, the power semiconductor module according to the embodiment can be applied to various electrical and electronic devices such as electric vehicle chargers, power supply devices, or railways in addition to eco-friendly vehicles.

[0059] In addition, the heat dissipation substrate for power semiconductors according to the embodiments can also be mounted on and used in power semiconductor modules employed in inverters, converters, etc. of automobiles, computers, home appliances, solar power, smart grids, and the like. Further, the heat dissipation substrate for power semiconductors according to the embodiments can be mounted on and used in power semiconductor modules mounted on various electric and electronic devices such as electric vehicle chargers, power supply devices, or railways, etc., in addition to eco-friendly vehicles.

[0060] In the embodiments, the power semiconductor device can include one power semiconductor module or a plurality of power semiconductor modules. Further, the power semiconductor module can include a plurality of power semiconductor elements.

[0061] In the following embodiments, the power semiconductor device describes an inverter for an automobile for driving a motor. However, the power semiconductor device of the embodiments can be applied to inverters, converters, etc. in the various technical fields described above. Here, the automobiles include hybrid electric vehicles (HEVs), plug-in hybrid electric vehicles (PHEVs), electric vehicles (EVs), fuel cell electric vehicles (PCEVs), etc. In the description of the following embodiments, the switching element and the power semiconductor element can be used interchangeably.

[0062] <Power conversion device> FIG. 2 is a configuration example diagram of a power conversion device 1000 according to an embodiment.

[0063] The power conversion device 1000 according to the embodiments can receive a DC power supply from a battery or a fuel cell and convert it into an AC power supply, and can supply the AC power supply to a predetermined load. For example, the power conversion device 1000 according to the embodiments can include an inverter, receive a DC power supply from a battery, convert it into a three-phase AC power supply, and supply it to a motor M. The motor M can provide power to an electric vehicle, a fuel cell electric vehicle, etc.

[0064] The power conversion device 1000 according to the embodiment can include a power semiconductor device 100. The power semiconductor device 100 may be a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), but is not limited thereto, and can include an IGBT (Insulated Gate Bipolar Transistor).

[0065] For example, the power conversion device 1000 can include a plurality of power semiconductor devices 100a, 100b, 100c, 100d, 100e, 100f, and can include a plurality of diodes (not shown). Each of the plurality of diodes may be inherent in each of the power semiconductor devices 100a, 100b, 100c, 100d, 100e, 100f in the form of an internal diode, but is not limited thereto, and may be separately arranged.

[0066] The embodiment can convert a DC power supply into an AC power supply by on / off control of a plurality of power semiconductor devices 100a to 100f. For example, the power conversion device 1000 according to the embodiment can turn on the first power semiconductor device 100a and turn off the second power semiconductor device 100b in the first time interval of one cycle to supply a positive-polarity power supply to the motor M, and turn off the first power semiconductor device 100a and turn on the second power semiconductor device 100b in the second time interval of one cycle to supply a negative-polarity power supply to the motor M.

[0067] In the embodiment, a group of power semiconductor devices arranged in series between the high-voltage line and the low-voltage line on the input side can be called an arm. For example, the first power semiconductor device 100a and the second power semiconductor device 100b can form the first arm, the third power semiconductor device 100c and the fourth power semiconductor device 100d can form the second arm, and the fifth power semiconductor device 100e and the sixth power semiconductor device 100f can form the third arm.

[0068] The upper and lower power semiconductor devices are controlled by the arm so as not to turn on simultaneously. For example, in the first arm, the first power semiconductor device 100a and the second power semiconductor device 100b do not turn on simultaneously but turn on and off alternately.

[0069] A high power supply is applied to each of the power semiconductor devices 100a to 100f in the off state. For example, when the second power semiconductor device 100b turns off while the first power semiconductor device 100a is on, the input voltage is applied to the second power semiconductor device 100b as it is. The voltage input to the second power semiconductor device 100b is a relatively high voltage, and the breakdown voltage of each of the power semiconductor devices 100a to 100f can be designed to a high level so as to withstand such a high voltage.

[0070] Each of the power semiconductor devices 100a to 100f can conduct a high current in the on state. The motor M is driven by a relatively high current, and such a high current is supplied to the motor M through the power semiconductor that is on.

[0071] The high voltage applied to each of the power semiconductor devices 100a to 100f can induce a high switching loss. The high current flowing through the power semiconductor devices 100a to 100f can induce a high conduction loss. In order to dissipate the heat generated by such losses, the power semiconductor devices 100a to 100f can be packaged in a power semiconductor module including a heat dissipation means.

[0072] The power semiconductor device 100 of the embodiment may be a SiC (Silicon Carbide) power semiconductor device, which can operate in a high-temperature and high-voltage environment and can have a high switching speed and a low switching loss.

[0073] On the other hand, the power conversion device 1000 according to the embodiment can include a plurality of power semiconductor modules.

[0074] For example, a plurality of power semiconductor devices 100a to 100f illustrated in FIG. 2 are packaged in one power semiconductor module, or the power semiconductor devices constituting each arm are packaged in one power semiconductor module.

[0075] For example, the first power semiconductor device 100a, the second power semiconductor device 100b, the third power semiconductor device 100c, the fourth power semiconductor device 100d, the fifth power semiconductor device 100e, and the sixth power semiconductor device 100f illustrated in FIG. 2 are packaged in one power semiconductor module.

[0076] Further, additional power semiconductor devices arranged in parallel with the power semiconductor devices 100a to 100f can be further included to increase the current capacity. In such a case, the number of power semiconductor devices included in the power semiconductor module becomes more than six.

[0077] The power conversion device 1000 according to the embodiment may also include power semiconductor devices in the form of diodes in addition to the power semiconductor devices 100a to 100f in the form of transistors. For example, a first diode (not shown) may be arranged in parallel with the first power semiconductor device 100a, and a second diode (not shown) may be arranged in parallel with the second power semiconductor device 100b. And such diodes may also be packaged together in one power semiconductor module. Further, the diodes may be arranged in the form of internal diodes in each power semiconductor device.

[0078] Next, the power semiconductor devices constituting each arm are packaged in one power semiconductor module.

[0079] For example, the first power semiconductor device 100a and the second power semiconductor device 100b constituting the first arm are packaged in the first power semiconductor module, the third power semiconductor device 100c and the fourth power semiconductor device 100d constituting the second arm are packaged in the second power semiconductor module, and the fifth power semiconductor device 100e and the sixth power semiconductor device 100f constituting the third arm are packaged in the third power semiconductor module.

[0080] In addition, additional power semiconductor devices arranged in parallel with each of the power semiconductor devices 100a to 100f can be further included to increase the current capacity. In this case, the number of power semiconductor devices included in each power semiconductor module becomes more than two. And each arm includes, in addition to the power semiconductor devices 100a to 100f in transistor form, power semiconductor devices in diode form (not shown), and such diodes may also be packaged together in one power semiconductor module. Further, the diode may be arranged in the form of an internal diode for each power semiconductor device.

[0081] Next, FIG. 3 is a cross-sectional view of the power semiconductor device 100 according to the embodiment.

[0082] The power semiconductor device 100 according to the embodiment can include a source electrode 145 disposed above a predetermined semiconductor epitaxial layer 120, a gate electrode 165, and a drain electrode 105 disposed below the semiconductor epitaxial layer 120.

[0083] In the form of a MOSFET, the source electrode 145 or the gate electrode 165 can include an Al-based metal, and the drain electrode 105 can include a Ti / Ni / Ag metal including a Ti layer, a Ni layer, and an Ag layer, NiV / Ag, V (vanadium) / Ni / Ag, etc., but is not limited thereto.

[0084] As described above, one of the technical problems of the embodiment is to provide a power semiconductor module, a manufacturing method thereof, and a power conversion device including the same that can prevent assembly defects due to height tolerances of components of the power semiconductor module and thermal, mechanical, and electrical reliability problems.

[0085] In addition, one of the technical problems of the embodiment is to provide a power semiconductor module, a manufacturing method thereof, and a power conversion device including the same that can prevent problems in which malfunction occurs in high-speed switching of a power semiconductor device due to EMI or EMS problems in the power semiconductor module.

[0086] Hereinafter, embodiments that can solve the technical problems of the embodiments will be described in detail.

[0087] (First Embodiment) FIG. 4 is a cross-sectional view of a power semiconductor module 501 according to the first embodiment. Hereinafter, the "first embodiment" may be abbreviated as the "embodiment".

[0088] Referring to FIG. 4, the power semiconductor module 501 according to the first embodiment can include a first substrate 210, a second substrate 220, and a conductive frame 250. A plurality of power semiconductor elements 100 can constitute one sub-module. The first substrate 210 and the second substrate 220 may be heat dissipation substrates.

[0089] For example, the sub-module can include a first power semiconductor element 100a and a second power semiconductor element 100b. Referring to FIG. 3, the first power semiconductor element 100a or the second power semiconductor element 100b can include a semiconductor epi-layer 120, a source electrode 145, a gate electrode 165, and a drain electrode 105.

[0090] Subsequently, referring to FIG. 4, the first power semiconductor element 100a and the second power semiconductor element 100b can constitute one arm. For example, the electrodes of the first power semiconductor element 100a and the second power semiconductor element 100b may be arranged in opposite directions. For example, the source electrode and the gate electrode of the first power semiconductor element 100a are arranged on the upper side, and the drain electrode is arranged on the lower side. Also, the source electrode and the gate electrode of the second power semiconductor element 100b are arranged on the lower side, and the drain electrode is arranged on the upper side. In such an arrangement structure, the first power semiconductor element 100a and the second power semiconductor element 100b can constitute one arm.

[0091] Also, when the electrodes of the first power semiconductor element 100a and the second power semiconductor element 100b are arranged in the same direction, the first power semiconductor element 100a and the second power semiconductor element 100b are electrically connected in parallel.

[0092] On the one hand, the first power semiconductor device 100a is disposed between the first substrate 210 and the second substrate 220 and joined by an adhesive member 135. Also, the second power semiconductor device 100b is disposed between the first substrate 210 and the second substrate 220 and joined by the adhesive member 135.

[0093] The first adhesive member 135 may be a Sn-Ag-based adhesive member or an Ag-based adhesive member. The first adhesive member 135 may be pasted between the first substrate 210 and the second substrate 220, but is not limited thereto. Also, the power semiconductor device 100 may be joined by sintering, but is not limited thereto.

[0094] Referring to FIG. 4, the first substrate 210 and the second substrate 220 may be heat dissipation substrates. For example, the first substrate 210 may include a first insulating substrate 210s, a first plate 210c under the first insulating substrate 210s, and a first circuit pattern 210p on the first insulating substrate 210s.

[0095] Also, the second substrate 220 may include a second insulating substrate 220s, a second circuit pattern 220P under the second insulating substrate 220s, and a second plate 220c on the second insulating substrate 220s.

[0096] The first insulating substrate 210s and the second insulating substrate 220s may include a polycrystalline insulating substrate made of a ceramic material with high thermal conductivity. For example, the first insulating substrate 210s and the second insulating substrate 220s may be one of AlN or Si3N4, but are not limited thereto, and may be Al2O3 or the like. Also, the first insulating substrate 210s and the second insulating substrate 220s may include a single crystal substrate such as a sapphire substrate.

[0097] The first plate 210c and the second plate 220c may include a Cu-based metal, but are not limited thereto.

[0098] Referring back to FIG. 1, in a power semiconductor module according to the prior art, in the DSC (Dual Side Cooling) technology, when a power semiconductor element and a spacer structure are laminated together, there may be a height tolerance problem in the module, and when pressure is applied with a press jig (not shown), there may be a problem of component damage.

[0099] In particular, since many components such as a power semiconductor element and a spacer structure are laminated together, the pressure of the press jig must be applied with a greater pressure, so there is a problem that component damage may occur.

[0100] Also, according to the prior art, due to the height variation between components, the degree of adhesion and the position are different for each power semiconductor element during crimping, so there may be problems of thermal or mechanical reliability between components.

[0101] Also, according to the prior art, due to the height tolerance of the module, there may be an appearance defect (Mold flash: MF) during EMC Transfer Molding.

[0102] Also, according to the prior art, when a power semiconductor chip is arranged with a predetermined paste interposed on a heat dissipation substrate and pressure is applied with a press jig (not shown), when a power semiconductor element and a spacer structure are laminated together, a height tolerance may occur, or when an inclination occurs, a misalignment may occur between the circuit pattern on the heat dissipation substrate and the power semiconductor chip when pressure is applied with the press jig.

[0103] For example, when applying pressure to a power semiconductor chip with a press jig (not shown), a rotated chip (R-chip) or a shifted chip (S-Chip) may be generated, resulting in misalignment between the circuit pattern on the heat dissipation substrate and the power semiconductor chip, and problems such as electrical disconnection or short circuit may occur.

[0104] In particular, since the gate electrode and the source electrode are miniaturized as the power semiconductor element is miniaturized, there is a problem that poor electrical contact of the electrodes occurs even if the power semiconductor element deviates slightly from the fixed position.

[0105] In addition, a power semiconductor module used in an inverter of an electric vehicle or the like performs a high-speed switching operation in a state where a plurality of power semiconductor elements are arranged in series or in parallel. Therefore, electromagnetic interference (EMI: Electromagnetic Interference) may occur inside the power semiconductor module, or electromagnetic noise may be generated from the outside, resulting in problems with electromagnetic susceptibility (EMS: Electromagnetic Susceptibility). When a malfunction occurs in the high-speed switching of the power semiconductor element due to an EMI or EMS problem in the power semiconductor module mounted on the vehicle, there is a problem that it will seriously affect the safety of the driver.

[0106] The first embodiment may include heat dissipation posts 310 disposed on the second substrate 220, and may include a first molding member 320 surrounding the first substrate 210, the second substrate, and the conductive frame 250.

[0107] For example, the heat dissipation posts 310 are disposed at positions overlapping the first power semiconductor element 100a and the second power semiconductor element 100b vertically.

[0108] For example, the heat dissipation posts 310 may include a first heat dissipation post 311 overlapping the first power semiconductor element 100a vertically and a second heat dissipation post 312 overlapping the second power semiconductor element 100b vertically.

[0109] The heat dissipation post 310 may be made of a heat-conductive material. For example, the heat dissipation post 310 may be made of a metal material such as Cu, but is not limited thereto.

[0110] The heat dissipation post 310 may be joined onto the second substrate 220 using a predetermined adhesive member (not shown). Alternatively, the heat dissipation post 310 may be joined by ultrasonic bonding, thereby reducing the transmission of pressure and heat to the first power semiconductor element 100a or the second power semiconductor element 100b.

[0111] According to the embodiment, there is a technical effect of preventing assembly defects and thermal, mechanical, and electrical reliability problems due to height tolerances of components of the power semiconductor module.

[0112] For example, according to the embodiment, a power semiconductor element is disposed between the first substrate 210 and the second substrate 220, and an additional structure such as a separate spacer is omitted, thereby having a technical effect of preventing assembly defects due to height tolerances of components of the power semiconductor module.

[0113] Further, according to the embodiment, a power semiconductor element is disposed between the first substrate 210 and the second substrate 220, and an additional structure such as a separate spacer is omitted, thereby reducing the pressure applied to the power semiconductor element and the substrate during the crimping process using a press jig, and having a technical effect of preventing thermal, mechanical, and electrical reliability problems.

[0114] Further, according to the embodiment, the heat dissipation performance is improved by disposing heat dissipation posts at positions corresponding to the vertical direction of the power semiconductor element in consideration of the heat dissipation distribution on the substrate.

[0115] Further, according to the embodiment, there is a technical effect of preventing problems in which malfunction occurs in high-speed switching of the power semiconductor element due to EMI or EMS problems in the power semiconductor module.

[0116] For example, according to the embodiment, a heat dissipation post made of a metal material capable of functioning as an electrostatic shield or an electromagnetic wave shield is disposed at a position overlapping the power semiconductor element in the vertical direction, thereby having a technical effect of preventing a problem in which malfunction occurs in high-speed switching of the power semiconductor element due to EMI or EMS problems in the power semiconductor module.

[0117] For example, since the heat dissipation post can reduce the impedance of the ground wire, there is an effect of preventing malfunction due to EMI or EMS problems in a power semiconductor module that operates at high-speed switching. Further, in the embodiment, the second plate 220c of the second substrate 220 that is in contact with the heat dissipation post or the heat dissipation post may be grounded.

[0118] Generally, since the second plate 220c of the second substrate 220 that is not electrically connected to the power semiconductor element only has a heat dissipation function, the second plate 220c of the second substrate 220 is not grounded.

[0119] On the other hand, according to the embodiment, a heat dissipation post made of a metal material capable of functioning as an electrostatic shield or an electromagnetic wave shield is disposed at a position overlapping the power semiconductor element in the vertical direction, and the second plate 220c of the second substrate 220 that is in contact with the heat dissipation post or the heat dissipation post is grounded, thereby having a special technical effect of preventing a problem in which malfunction occurs in high-speed switching of the power semiconductor element due to EMI or EMS problems in the power semiconductor module.

[0120] Hereinafter, with reference to FIGS. 5A to 6B, the manufacturing process of the power semiconductor module 501 according to the first embodiment will be described, and the technical features of the first embodiment will be described in detail.

[0121] First, referring to FIG. 5A, a first power semiconductor element 100a, a second power semiconductor element 100b, and a conductive frame 250 are disposed between a first substrate 210 and a second substrate 220 and are primarily joined by a first bonding member 135.

[0122] Specifically, a pick-and-place process is performed using a pickup tool, and the first power semiconductor element 100a and the conductive frame 250 are joined to the first substrate 210 by the first adhesive member 135.

[0123] Also, the second power semiconductor element 100b is joined to the second substrate 220 by the first adhesive member 135.

[0124] The first adhesive member 135 may be a Sn-Ag based adhesive member or an Ag based adhesive member, and may be pasted on the first substrate 210 and the second substrate 220, but is not limited thereto.

[0125] Thereafter, a sintering process is performed while performing thermocompression bonding P using a predetermined press jig (not shown).

[0126] For example, a power semiconductor module can be manufactured by performing secondary bonding for thermocompression bonding the first substrate 210 and the second substrate 220. The process temperature of the secondary bonding may be 200°C to 300°C, but is not limited thereto.

[0127] On the other hand, in the DSC (Dual Side Cooling) technology according to the prior art, a height tolerance of the module may occur due to the power semiconductor element and the spacer structure being laminated together. When pressure is applied using a press jig (not shown), there is a problem that damage to the components may occur. In particular, since many components such as the power semiconductor element and the spacer structure are laminated together, the pressure of the press jig must be applied with a greater pressure, so there is a problem that damage to the components may occur.

[0128] Also, according to the prior art, due to the height variation between components, the adhesion degree and position of each power semiconductor element are different during pressure bonding, so there is a problem that thermal or mechanical reliability problems may occur between components.

[0129] Further, according to the prior art, when pressure is applied with a press jig, misalignment may occur between the circuit pattern on the heat dissipation substrate and the power semiconductor chip due to the occurrence of height tolerance or inclination caused by laminating the power semiconductor element and the spacer structure together.

[0130] On the other hand, according to the embodiment, a power semiconductor element is disposed between the first substrate 210 and the second substrate 220, and an additional structure such as a separate spacer is omitted, so that there is a technical effect of preventing the problem of assembly failure due to the height tolerance of the components of the power semiconductor module.

[0131] Also, according to the embodiment, a power semiconductor element is disposed between the first substrate 210 and the second substrate 220, and an additional structure such as a separate spacer is omitted, so that the pressure applied to the power semiconductor element and the substrate during the crimping process by the press jig can be reduced, and there is a technical effect of preventing thermal, mechanical, and electrical reliability problems.

[0132] Next, referring to FIG. 5b, the heat dissipation post 310 can be disposed on the second substrate 220. For example, the heat dissipation post 310 is disposed at a position overlapping vertically with the first power semiconductor element 100a and the second power semiconductor element 100b.

[0133] For example, the heat dissipation post 310 may include a first heat dissipation post 311 overlapping vertically with the first power semiconductor element 100a and a second heat dissipation post 312 overlapping vertically with the second power semiconductor element 100b.

[0134] The heat dissipation post 310 may be made of a heat conductive material. For example, the heat dissipation post 310 may be made of a metal material such as Cu, but is not limited thereto.

[0135] The heat dissipation post 310 may be joined on the second substrate 220 using a predetermined adhesive member.

[0136] Alternatively, by joining the heat dissipation posts 310 through ultrasonic bonding, it is possible to reduce the transmission of pressure and heat to the first power semiconductor element 100a or the second power semiconductor element 100b. For example, the ultrasonic bonding technique of the embodiment is a technique in which the heat dissipation post 310 to be joined and the heat dissipation substrate are brought into contact with each other and a certain pressure is applied, and then vibrated with a predetermined ultrasonic wave, for example, an ultrasonic wave of about 20 kHz or more, to cause friction on the bonding surface to induce intermetallic contact, and a bonding portion is formed by frictional heat or the like to perform bonding. The ultrasonic bonding technique of the embodiment can include, but is not limited to, a horizontal vibration method.

[0137] According to an additional embodiment, the bonding process of the first substrate 210, the second substrate 220, the first power semiconductor element 100a, and the second power semiconductor element 100b in FIG. 5a may be performed with the heat dissipation posts 310 bonded to the second substrate 220.

[0138] Next, referring to FIG. 6a, a preliminary molding material 320a is overcoated up to a position higher than the heat dissipation posts 310 using a molding housing (not shown). The preliminary molding material 320a can include, but is not limited to, EMC (Epoxy Molding Compound).

[0139] Next, referring to FIG. 6b, the first molding member 320 can be formed by grinding the preliminary molding material 320a by grinding G so that the heat dissipation posts 310 are exposed.

[0140] According to the prior art, there was a possibility of appearance defects (Mold flash: MF) occurring during EMC Transfer Molding due to the height tolerance of the module.

[0141] On the one hand, according to an embodiment, after overcoating up to a position higher than the heat dissipation post 310 and then performing grinding G to form the first molding member 320 such that the heat dissipation post 310 is exposed, it is possible to prevent the occurrence of appearance defects in the EMC molding.

[0142] Further, the embodiment can control the height of the heat dissipation post in consideration of the product specifications, and by performing the subsequent molding process, there is a technical effect that the thickness and height of the product specifications can be accurately controlled.

[0143] Also, in the embodiment, the second plate 220c of the second substrate 220 in contact with the heat dissipation post 310 or the heat dissipation post 310 may be grounded.

[0144] Accordingly, according to the embodiment, a heat dissipation post made of a metal material that can function as an electrostatic shield or an electromagnetic wave shield is disposed at a position overlapping the power semiconductor element in the vertical direction, and the second plate 220c of the second substrate 220 in contact with the heat dissipation post or the heat dissipation post is grounded, so that there is a special technical effect of preventing the problem of malfunction in the high-speed switching of the power semiconductor element due to EMI or EMS problems in the power semiconductor module.

[0145] (Second Embodiment) Next, FIG. 7 is a cross-sectional view of a power semiconductor module 502 according to the second embodiment. The second embodiment can adopt the technical features of the first embodiment, and the following will mainly focus on the main features of the second embodiment for explanation.

[0146] Referring to FIG. 7, the power semiconductor module 502 according to the second embodiment may include a first substrate 210, a second-1 substrate 220a, a second-2 substrate 220b, a conductive frame 250, and a heat dissipation post 310. A plurality of power semiconductor elements 100 can constitute one sub-module. The first substrate 210, the second-1 substrate 222a, and the second-2 substrate 220b may be heat dissipation substrates.

[0147] The second embodiment can include a first molding member 320 that surrounds the first substrate 210, the second-1 substrate 220a, the second-2 substrate 220b, and the conductive frame 250.

[0148] The first power semiconductor element 100a is disposed between the first substrate 210 and the second-1 substrate 220a and is joined by an adhesive member 135. Also, the second power semiconductor element 100b is disposed between the first substrate 210 and the second-2 substrate 220b and is joined by the adhesive member 135. The first adhesive member 135 may be a Sn-Ag based adhesive member or an Ag based adhesive member.

[0149] The first substrate 210 can include a first insulating substrate 210s, a first plate 210c under the first insulating substrate 210s, and a first circuit pattern 210p on the first insulating substrate 210s (see FIG. 4).

[0150] Also, the second-1 and second-2 substrates 220a, 220b can include a second insulating substrate 220s, a second circuit pattern 220P under the second insulating substrate 220s, and a second plate 220c on the second insulating substrate 220s (see FIG. 4).

[0151] Hereinafter, the technical features will be described in detail while explaining the manufacturing process of the second embodiment.

[0152] First, referring to FIG. 7, the first power semiconductor element 100a and the conductive frame 250 are joined by the first adhesive member 135 on the first substrate 210 using a pickup tool.

[0153] Also, the second power semiconductor element 100b is joined by the first adhesive member 135 on the second-2 substrate 220b. Also, the second-1 substrate 220a is joined on the first power semiconductor element 100a.

[0154] The sintering process is performed while thermocompression bonding P is carried out by a predetermined press jig (not shown). For example, a secondary bonding for thermocompression bonding the first substrate 210, the second-1 substrate 220a, and the second-2 substrate 220b can be performed to manufacture a power semiconductor module.

[0155] According to the second embodiment, a power semiconductor element is disposed between the first substrate 210, the second-1 substrate 220a, and the second-2 substrate 220b, and an additional structure such as a separate spacer is omitted, thereby having a technical effect of preventing the problem of assembly failure due to the height tolerance of the components of the power semiconductor module.

[0156] Also, according to the second embodiment, a power semiconductor element is disposed between the first substrate 210 and the second substrate 220, and an additional structure such as a separate spacer is omitted, thereby reducing the pressure applied to the power semiconductor element and the substrate during the pressure bonding process by the press jig, and having a technical effect of preventing thermal, mechanical, and electrical reliability problems.

[0157] Next, a first heat dissipation post 311 and a second heat dissipation post 312 can be respectively disposed on the second-1 substrate 220a and the second-2 substrate 220b. For example, the first heat dissipation post 311 and the second heat dissipation post 312 are respectively disposed at positions overlapping the first power semiconductor element 100a and the second power semiconductor element 100b vertically.

[0158] The heat dissipation post 310 may be made of a heat conductive material. For example, the heat dissipation post 310 may be made of a metal material such as Cu, but is not limited thereto.

[0159] The heat dissipation post 310 may be joined on the second substrate 220 using a predetermined adhesive member.

[0160] Alternatively, the heat dissipation post 310 is joined by ultrasonic bonding, thereby reducing the transmission of pressure and heat to the first power semiconductor element 100a or the second power semiconductor element 100b.

[0161] Next, using a molding housing (not shown), a preliminary molding material (not shown) such as EMC is overcoated up to a position higher than the heat dissipation post 310. Thereafter, as shown in FIG. 7, the first molding member 320 can be formed by grinding the preliminary molding material so that the heat dissipation post 310 is exposed.

[0162] According to the second embodiment, by forming a molding material by overcoating up to a position higher than the heat dissipation post and then grinding so that the heat dissipation post is exposed, it is possible to prevent the occurrence of appearance defects in the EMC molding. In addition, the embodiment can control the height of the heat dissipation post in consideration of the product specifications, and thereafter, by performing the molding process, there is a technical effect that the thickness and height of the product specifications can be accurately controlled.

[0163] Also, in the second embodiment, the second plate of the heat dissipation post 310 or the second substrate 220 in contact with the heat dissipation post 310 may be grounded. Thereby, according to the second embodiment, a heat dissipation post made of a metal material having a function of electrostatic shielding or electromagnetic wave shielding is disposed at a position overlapping the power semiconductor element in the vertical direction, and the second plate of the heat dissipation post or the second substrate 220 in contact with the heat dissipation post is grounded. There is a special technical effect that can prevent problems such as malfunction in the high-speed switching of the power semiconductor element due to EMI or EMS problems in the power semiconductor module.

[0164] (Third Embodiment) Next, FIG. 8 is a cross-sectional view of a power semiconductor module 503 according to the third embodiment. The third embodiment can adopt the technical features of the first embodiment or the second embodiment, and hereinafter, the description will be centered on the main features of the third embodiment.

[0165] Referring to FIG. 8, the power semiconductor module 503 according to the third embodiment may include a first substrate 210, a second-third substrate 220c, a second-second substrate 220b, a conductive frame 250, and a heat dissipation post 310. A plurality of power semiconductor elements 100 may constitute one sub-module. The first substrate 210, the second-third substrate 222c, and the second-second substrate 220b may be heat dissipation substrates.

[0166] The third embodiment may include a first molding member 320 that surrounds the first substrate 210, the second-third substrate 220c, the second-second substrate 220b, and the conductive frame 250.

[0167] The first power semiconductor element 100a is disposed between the first substrate 210 and the second-third substrate 220c and is joined by an adhesive member 135. Also, the second power semiconductor element 100b is disposed between the first substrate 210 and the second-second substrate 220b and is joined by an adhesive member 135. The first adhesive member 135 may be a Sn-Ag based adhesive member or an Ag based adhesive member.

[0168] The first substrate 210 may include a first insulating substrate 210s, a first plate 210c under the first insulating substrate 210s, and a first circuit pattern 210p on the first insulating substrate 210s (see FIG. 4).

[0169] Also, the second-third and second-second substrates 220c, 220b may include a second insulating substrate 220s, a second circuit pattern 220P under the second insulating substrate 220s, and a second plate 220c on the second insulating substrate 220s (see FIG. 4).

[0170] Hereinafter, the technical features will be described in detail while explaining the manufacturing process of the third embodiment 503.

[0171] Referring to FIG. 8, the conductive frame 250 is joined to the first substrate 210 by the first adhesive member 135 using a pick-up tool.

[0172] Next, the first power semiconductor element 100a and the conductive member 190 are joined to the second-third substrate 220c by the first adhesive member 135. The conductive member 190 can include a metal material such as Cu. Also, the second power semiconductor element 100b is joined to the second-second substrate 220b by the first adhesive member 135.

[0173] Thereafter, a sintering process is performed while performing thermocompression bonding P by a predetermined press jig (not shown). For example, a power semiconductor module can be manufactured by performing secondary bonding for thermocompression bonding the first substrate 210, the second-third substrate 220c, and the second-second substrate 220b.

[0174] According to the third embodiment, a power semiconductor element is disposed between the first substrate 210 and the second-third substrate 220c and the second-second substrate 220b, and an additional structure such as a spacer that overlaps in the direction perpendicular to the power semiconductor element is omitted, thereby preventing the problem of assembly failure due to the height tolerance of the components of the power semiconductor module. It is possible to reduce the pressure applied to the power semiconductor element and the substrate during the crimping process by the press jig, and there is a technical effect that thermal, mechanical, and electrical reliability problems can be prevented.

[0175] Next, the first heat dissipation post 311 and the second heat dissipation post 312 can be respectively disposed on the second-third substrate 220c and the second-second substrate 220b. For example, the first heat dissipation post 311 and the second heat dissipation post 312 are respectively disposed at positions overlapping the first power semiconductor element 100a and the second power semiconductor element 100b vertically. The heat dissipation post 310 may be made of a metal material such as Cu, but is not limited thereto.

[0176] The heat dissipation post 310 may be joined to the second substrate 220 using a predetermined adhesive member. Alternatively, the heat dissipation post 310 can be joined by ultrasonic bonding to reduce the transmission of pressure and heat to the first power semiconductor element 100a or the second power semiconductor element 100b.

[0177] Next, using a molding housing (not shown), a preliminary molding material (not shown) such as EMC is overcoated up to a position higher than the heat dissipation post 310. Thereafter, as shown in FIG. 7, the preliminary molding material can be ground to form the first molding member 320 so that the heat dissipation post 310 is exposed.

[0178] According to the third embodiment, by forming a molding material by grinding after overcoating up to a position higher than the heat dissipation post so that the heat dissipation post is exposed, it is possible to prevent the occurrence of appearance defects in the EMC molding. Further, in the embodiment, the height of the heat dissipation post can be controlled in consideration of the product specifications, and thereafter, by performing the molding process, there is a technical effect that the thickness and height of the product specifications can be accurately controlled.

[0179] Also, in the third embodiment, the second plate of the heat dissipation post 310 or the second - 3 substrate 220c or the second - 2 substrate 220b in contact with the heat dissipation post 310 may be grounded. Thereby, according to the third embodiment, a heat dissipation post made of a metal material having a function of electrostatic shielding or electromagnetic wave shielding is disposed at a position overlapping the power semiconductor element in the vertical direction, and by grounding the heat dissipation post or the plate of the second - 3 substrate 220c or the second - 2 substrate in contact with the heat dissipation post, there is a special technical effect that it is possible to prevent a problem that malfunction occurs in the high - speed switching of the power semiconductor element due to EMI or EMS problems in the power semiconductor module.

[0180] (Fourth Embodiment) Next, FIG. 9 is a cross - sectional view of a power semiconductor module 504 according to the fourth embodiment. The fourth embodiment can adopt the technical features of the first to third embodiments, and hereinafter, the main features of the fourth embodiment will be mainly described.

[0181] Referring to FIG. 9, the power semiconductor module 504 according to the fourth embodiment can include a first substrate 210, a second-third substrate 220c, a second-second substrate 220b, a conductive frame 250, and a heat dissipation post 310. A plurality of power semiconductor elements 100 can constitute one sub-module. The first substrate 210, the second-third substrate 222c, and the second-second substrate 220b may be heat dissipation substrates.

[0182] The third embodiment can include a first molding member 320 that surrounds the first substrate 210, the second-third substrate 220c, the second-second substrate 220b, and the conductive frame 250.

[0183] Hereinafter, the manufacturing process of the fourth embodiment 504 may be the same up to the step of grinding the preliminary molding material of the third embodiment to form the first molding member 320 so that the heat dissipation post 310 is exposed (see FIG. 7).

[0184] Thereafter, in the fourth embodiment, a molding recess 320R can be formed by a laser drilling process or the like on the first molding member 320 to form the second molding member 230b. According to the fourth embodiment, the side surface of the heat dissipation post 310 is exposed by the molding recess 320R, so that there is a technical effect of further improving the heat dissipation efficiency.

[0185] Also, according to the fourth embodiment, a power semiconductor element is disposed between the first substrate 210 and the second-third substrate 220c and the second-second substrate 220b, and an additional structure such as a spacer that overlaps in the vertical direction with the power semiconductor element is omitted, thereby preventing the problem of assembly failure due to the height tolerance of the components of the power semiconductor module, reducing the pressure applied to the power semiconductor element and the substrate during the crimping process by the press jig, and having a technical effect of preventing thermal, mechanical, and electrical reliability problems.

[0186] Also, according to the fourth embodiment, by performing overcoating up to a position higher than the heat dissipation posts and then grinding to form a molding material such that the heat dissipation posts are exposed, it is possible to prevent the occurrence of appearance defects in the EMC molding. Further, the embodiment has a technical effect that the height of the heat dissipation posts can be controlled in consideration of product specifications, and thereafter, by performing the molding process, the thickness and height of the product specifications can be accurately controlled.

[0187] Also, according to the fourth embodiment, a heat dissipation post made of a metal material that can function as an electrostatic shield or an electromagnetic wave shield is disposed at a position overlapping the power semiconductor element in the vertical direction, and the heat dissipation post 310 or the plate of the second - 3 substrate 220c or the second - 2 substrate in contact with the heat dissipation post 310 is grounded, thereby having a special technical effect of preventing problems such as malfunction in the high - speed switching of the power semiconductor element due to EMI or EMS problems in the power semiconductor module.

[0188] (Fifth Embodiment) Next, FIG. 10 is a cross - sectional view of a power semiconductor module 505 according to the fifth embodiment. The fifth embodiment can adopt the technical features of the first to fourth embodiments, and hereinafter, the main features of the fifth embodiment will be mainly described.

[0189] Referring to FIG. 10, the power semiconductor module 505 according to the fifth embodiment can include a first substrate 210, a second - 4 substrate 220d, a second - 5 substrate 220e, a conductive frame 250, and heat dissipation posts 310. A plurality of power semiconductor elements 100 can form one sub - module. The first substrate 210, the second - 4 substrate 220d, and the second - 5 substrate 220e may be heat dissipation substrates.

[0190] The fifth embodiment can include a first molding member 320 that surrounds the first substrate 210, the second - 4 substrate 220d, the second - 5 substrate 220e, and the conductive frame 250.

[0191] The first power semiconductor device 100a is disposed between the first substrate 210 and the second to fourth substrates 220d and is joined by an adhesive member 135. Further, the second power semiconductor device 100b is disposed between the first substrate 210 and the second to fifth substrates 220e and is joined by the adhesive member 135. The first adhesive member 135 may be a Sn-Ag based adhesive member or an Ag based adhesive member.

[0192] Hereinafter, the technical features will be described in detail while explaining the manufacturing process of the fifth embodiment 505.

[0193] Referring to FIG. 10, the first power semiconductor device 100a, the conductive member 190, the second power semiconductor device 100b, and the conductive frame 250 are joined by the first adhesive member 135 on the first substrate 210 using a pickup tool. The conductive member 190 can include a metal material such as Cu.

[0194] Thereafter, the second to fourth substrates 220d and the second to fifth substrates 220e are respectively disposed on the first power semiconductor device 100a and the second power semiconductor device 100b.

[0195] The second to fourth substrates 220d are disposed on the source electrode of the first power semiconductor device 100a and on the conductive member 190.

[0196] Also, the second to fifth substrates 220e are disposed on the source electrode of the second power semiconductor device 100b.

[0197] Thereafter, a sintering process is performed while performing thermocompression bonding P with a predetermined press jig (not shown). For example, a power semiconductor module can be manufactured by performing secondary bonding for thermocompression bonding the first substrate 210, the second to fourth substrates 220d, and the second to fifth substrates 220e.

[0198] Thereafter, the gate electrode of the first power semiconductor device 100a and the circuit pattern of the first substrate are connected by a wire W. Also, the gate electrode of the second power semiconductor device 100b and the circuit pattern of the first substrate are connected by a wire W.

[0199] According to the fifth embodiment, a power semiconductor device is disposed between the first substrate 210 and the second to fifth substrates 220e, and an additional structure such as a spacer that overlaps the power semiconductor device in the vertical direction is omitted, thereby preventing the problem of assembly failure due to the height tolerance of the components of the power semiconductor module, reducing the pressure applied to the power semiconductor device and the substrate during the crimping process using a press jig, and having a technical effect of preventing thermal, mechanical, and electrical reliability problems.

[0200] Next, a first heat dissipation post 311 and a second heat dissipation post 312 can be respectively disposed on the second to fourth substrates 220d and the second to fifth substrates 220e. For example, the first heat dissipation post 311 and the second heat dissipation post 312 are respectively disposed at positions overlapping the first power semiconductor device 100a and the second power semiconductor device 100b in the vertical direction. The heat dissipation post 310 may be made of a metal material such as Cu, but is not limited thereto.

[0201] The heat dissipation post 310 may be joined to the second substrate 220 using a predetermined adhesive member. Alternatively, the heat dissipation post 310 can be joined by ultrasonic bonding to reduce the transmission of pressure and heat to the first power semiconductor device 100a or the second power semiconductor device 100b.

[0202] Next, a preliminary molding material such as EMC (not shown) is overcoated up to a position higher than the heat dissipation post 310 using a molding housing (not shown). Thereafter, the first molding member 320 can be formed by grinding the preliminary molding material so that the heat dissipation post 310 is exposed.

[0203] According to the fifth embodiment, by overcoating up to a position higher than the heat dissipation post and then grinding to form a molding material so that the heat dissipation post is exposed, it is possible to prevent the occurrence of appearance defects in the EMC molding. Further, in the embodiment, the height of the heat dissipation post can be controlled in consideration of product specifications, and by performing the subsequent molding process, there is a technical effect that the thickness and height of the product specifications can be accurately controlled.

[0204] Also, in the fifth embodiment, the second plate of the heat dissipation post 310 or the second - 4 substrate 220d or the second - 5 substrate 220e in contact with the heat dissipation post 310 may be grounded. Thus, according to the fifth embodiment, a heat dissipation post made of a metal material having a function of electrostatic shielding or electromagnetic wave shielding is disposed at a position overlapping the power semiconductor element in the vertical direction, and by grounding the heat dissipation post or the plate of the second - 4 substrate 220d or the second - 5 substrate 220e in contact with the heat dissipation post, there is a special technical effect that it is possible to prevent problems such as malfunction in the high - speed switching of the power semiconductor element due to EMI or EMS problems in the power semiconductor module.

[0205] (Sixth Embodiment) Next, FIG. 11 is a cross - sectional view of a power semiconductor module 506 according to the sixth embodiment. The sixth embodiment can adopt the technical features of the first to fifth embodiments, and hereinafter, the main features of the sixth embodiment will be mainly described.

[0206] Referring to FIG. 10, the power semiconductor module 506 according to the sixth embodiment may include a first substrate 210, a second - 3 substrate 220c, a second - 2 substrate 220b, a conductive frame 250, and a protruding heat dissipation post 320P. A plurality of power semiconductor elements 100 can constitute one sub - module. The first substrate 210, the second - 3 substrate 222c, and the second - 2 substrate 220b may be heat - dissipating substrates.

[0207] The sixth embodiment can include a third molding member 320c that surrounds the first substrate 210, the second-third substrate 220c, the second-second substrate 220b, and the conductive frame 250.

[0208] In the sixth embodiment, the third molding member 320c may be formed by an injection molding method using a predetermined mold frame (not shown), rather than an overcoating method. For example, the third molding member 320c can be formed by injecting a mold into the interior of a predetermined mold frame. The height of the third molding member 320c may be lower than the height of the protruding heat dissipation post 320P.

[0209] Accordingly, the protruding heat dissipation post 320P can include a third heat dissipation post 313 and a fourth heat dissipation post 314, and can include a region covered by the third molding member 320c and a region that is exposed.

[0210] For example, the third heat dissipation post 313 can include a third-1 heat dissipation post 313a disposed inside the third molding member 320c and a third-2 heat dissipation post 313b disposed outside the third molding member 320c.

[0211] Also, the fourth heat dissipation post 314 can include a fourth-1 heat dissipation post 314a disposed inside the third molding member 320c and a fourth-2 heat dissipation post 314b disposed outside the third molding member 320c.

[0212] According to the sixth embodiment, there is a technical effect that the heat dissipation efficiency is further improved by exposing the upper surface of the protruding heat dissipation post 320P by the third molding member 320c.

[0213] Also, according to the sixth embodiment, a power semiconductor element is disposed between the first substrate 210 and the second-third substrate 220c and the second-second substrate 220b, and an additional structure such as a spacer that overlaps in the vertical direction with the power semiconductor element is omitted, thereby preventing problems of assembly defects due to height tolerance of components of the power semiconductor module, reducing the pressure applied to the power semiconductor element and the substrate during the crimping process by the press jig, and having a technical effect of preventing thermal, mechanical, and electrical reliability problems.

[0214] Also, according to the sixth embodiment, the height of the protruding heat dissipation post can be controlled in consideration of the product specifications, thereby having a technical effect of accurately controlling the thickness and height of the product specifications.

[0215] Also, according to the sixth embodiment, a heat dissipation post made of a metal material that can function as electrostatic shielding or electromagnetic wave shielding is disposed at a position overlapping in the vertical direction with the power semiconductor element, and the plate of the second-third substrate 220c or the second-second substrate 220b that contacts the protruding heat dissipation post 320P or the protruding heat dissipation post 320P is grounded, thereby having a special technical effect of preventing problems of malfunction in high-speed switching of the power semiconductor element due to EMI or EMS problems in the power semiconductor module.

[0216] The main technical features of the first to sixth embodiments are summarized as follows.

[0217] According to the embodiment, there is a technical effect of preventing assembly defects due to height tolerance of components of the power semiconductor module and thermal, mechanical, and electrical reliability problems.

[0218] For example, according to the embodiment, a power semiconductor element is disposed between the first substrate 210 and the second substrate 220, and an additional structure such as a separate spacer is omitted, thereby having a technical effect of preventing problems of assembly defects due to height tolerance of components of the power semiconductor module.

[0219] Further, according to the embodiment, a power semiconductor element is disposed between the first substrate 210 and the second substrate 220, and an additional structure such as a separate spacer is omitted, so that the pressure applied to the power semiconductor element and the substrate during the crimping process by the press jig can be reduced, and there is a technical effect of preventing thermal, mechanical, and electrical reliability problems.

[0220] Further, according to the embodiment, the heat dissipation performance is improved by disposing heat dissipation posts at positions corresponding to the vertical direction of the power semiconductor element in consideration of the heat dissipation distribution on the substrate.

[0221] Further, according to the embodiment, there is a technical effect of preventing problems in which malfunction occurs in high-speed switching of the power semiconductor element due to EMI or EMS problems in the power semiconductor module.

[0222] For example, according to the embodiment, by disposing heat dissipation posts made of a metal material having functions of electrostatic interruption and electromagnetic wave interruption at positions overlapping the power semiconductor element in the vertical direction, there is a technical effect of preventing problems in which malfunction occurs in high-speed switching of the power semiconductor element due to EMI or EMS problems in the power semiconductor module.

[0223] For example, according to the embodiment, heat dissipation posts made of a metal material having functions of electrostatic interruption and electromagnetic wave interruption are disposed at positions overlapping the power semiconductor element in the vertical direction, and the second plate 220c of the second substrate 220 in contact with the heat dissipation posts or the heat dissipation posts is grounded, so that there is a special technical effect of preventing problems in which malfunction occurs in high-speed switching of the power semiconductor element due to EMI or EMS problems in the power semiconductor module.

[0224] Further, according to the embodiment, after overcoating up to a position higher than the heat dissipation post 310 and then grinding G, a molding member is formed so that the heat dissipation post 310 is exposed, thereby preventing the occurrence of appearance defects in the EMC molding.

[0225] In addition, the embodiment can control the height of the heat dissipation post in consideration of the product specifications, and thereafter, by performing the molding process, there is a technical effect that the thickness and height of the product specifications can be accurately controlled.

[0226] Although the embodiments of the present invention have been described above with reference to the embodiments, those having ordinary knowledge in the technical field should easily understand that the present invention can be variously modified and changed without departing from the spirit and scope of the present invention described in the following claims.

Claims

1. A first substrate; a power semiconductor device bonded onto the first substrate; a second substrate bonded onto the power semiconductor device; a heat dissipation post bonded onto the second substrate; a molding member surrounding the first substrate, the power semiconductor device, the second substrate, and the heat dissipation post, A power semiconductor module, wherein an upper surface of the heat dissipation post is exposed from an upper surface of the molding member.

2. The power semiconductor module according to claim 1 , wherein the height of the upper surface of the heat dissipation post is the same as the height of the upper surface of the molding member.

3. The power semiconductor module according to claim 1 , wherein the heat dissipation post vertically overlaps the power semiconductor element.

4. The power semiconductor module of claim 1 , wherein the heat sink post is grounded.

5. the second substrate includes a metal plate; The power semiconductor module according to claim 1 , wherein the metal plate of the second substrate is grounded.

6. The power semiconductor device includes a first power semiconductor device and a second power semiconductor device spaced apart from each other on the first substrate, The second substrate is a second-1 substrate bonded onto the first power semiconductor device; 2. The power semiconductor module according to claim 1, further comprising a second-2 substrate disposed apart from the second-1 substrate and bonded onto the second power semiconductor device.

7. The power semiconductor device includes a first power semiconductor device and a second power semiconductor device spaced apart from each other on the first substrate, The second substrate is a second-2 substrate bonded onto the second power semiconductor device; a second-third substrate disposed apart from the second-second substrate and bonded onto the first power semiconductor device; 2. The power semiconductor module according to claim 1, further comprising a conductive member between said first substrate and said second to third substrates.

8. the molding member includes a molding recess in an upper surface thereof; a side surface of the heat dissipation post is exposed by the molding recess; The power semiconductor module according to claim 1 , wherein a gate electrode of the power semiconductor device is electrically connected to the first substrate by a wire.

9. The upper surface of the heat dissipation post is higher than the upper surface of the molding member, 2. The power semiconductor module of claim 1, wherein the heat dissipation posts protruding higher than the upper surface of the molding member include a third-1 heat dissipation post arranged on the inside of the molding member and a third-2 heat dissipation post arranged on the outside of the molding member.

10. A power conversion device comprising the power semiconductor module according to any one of claims 1 to 9.

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