Superconducting quantum circuit, quantum bit, quantum computer, and manufacturing method

Abstract

To provide a superconducting quantum circuit, a quantum bit, a quantum computer, and a manufacturing method that are easy to form using a deposition pattern.SOLUTION: A superconducting quantum circuit includes a substrate, a superconductor layer laminated on the substrate and including a main pattern and an extension pattern, a first vapor deposition pattern having a portion laminated on the superconductor layer, and a second vapor deposition pattern having a portion laminated on the first vapor deposition pattern, and has a Josephson junction at an overlapping portion between the first vapor deposition pattern and the second vapor deposition pattern, and the extension pattern is connected to at least one of the first vapor deposition pattern and the second vapor deposition pattern.SELECTED DRAWING: Figure 12

Description

Technical Field

[0001] The present disclosure relates to superconducting quantum circuits, qubits, quantum computers, and manufacturing methods.

Background Art

[0002] It is known that superconducting quantum circuits are used in quantum devices mounted on quantum computers and the like. As such a superconducting quantum circuit, for example, Patent Document 1 describes a superconducting quantum circuit in which a conductor layer and two vapor deposition patterns are formed of a superconducting material.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the superconducting quantum circuit described in Patent Document 1, Josephson junctions are formed by obliquely depositing two vapor deposition patterns on a substrate on which a conductor layer is formed. However, in the superconducting quantum circuit disclosed in Patent Document 1, depending on the circuit configuration, the vapor deposition pattern may become long. When the portion of the vapor deposition pattern becomes long, for example, the characteristics of the superconducting quantum circuit may deteriorate. For this reason, it is difficult to form the superconducting quantum circuit disclosed in Patent Document 1 with a vapor deposition pattern.

[0005] An object of the present disclosure is to provide a superconducting quantum circuit, a qubit, a quantum computer, and a manufacturing method that solve the above problems.

Means for Solving the Problems

[0006] A superconducting quantum circuit according to one aspect of the present disclosure includes a substrate, a superconductor layer laminated on the substrate and including a main pattern and an extension pattern, a first deposition pattern having a part laminated on the superconductor layer, and a second deposition pattern having a part laminated on the first deposition pattern. The overlapping portion of the first deposition pattern and the second deposition pattern has a Josephson junction, and the extension pattern is connected to at least one of the first deposition pattern and the second deposition pattern.

[0007] A manufacturing method according to one aspect of the present disclosure includes laminating a part of a first deposition pattern on a superconductor layer laminated on a substrate and including a main pattern and an extension pattern, oxidizing the surface of the first deposition pattern, laminating a part of a second deposition pattern on the first deposition pattern, forming a Josephson junction in the overlapping portion of the first deposition pattern and the second deposition pattern, and connecting the extension pattern to at least one of the first deposition pattern and the second deposition pattern.

Advantages of the Invention

[0008] According to the above aspect, it is easy to form with a deposition pattern.

Brief Description of the Drawings

[0009]

Figure 1

Figure 2

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Figure 9

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Figure 12

Figure 13

Embodiments for Carrying Out the Invention

[0010] <First Embodiment> Hereinafter, an embodiment according to the present disclosure will be described with reference to the drawings.

[0011] (Configuration of Quantum Computer) As shown in FIG. 1, the quantum computer 9 includes a plurality of qubits 91 and a plurality of couplers 92. The quantum computer 9 may be an annealing type quantum computer or a gate type quantum computer. The plurality of couplers 92 couple the plurality of qubits 91.

[0012] (Configuration of Qubit) Each qubit 91 includes a superconducting quantum circuit 1 and a coupling part 93. Each qubit 91 is coupled to another qubit 91 via a coupler 92 coupled to the coupling part 93. However, the coupler 92 is not essential. For example, a plurality of qubits 91 may have a structure in which two qubits are coupled only by the coupling part 93 without passing through the coupler 92.

[0013] (Configuration of Superconducting Quantum Circuit) As shown in FIG. 2, the superconducting quantum circuit 1 includes a substrate 2, a superconductor layer 3, a first vapor deposition layer 4, and a second vapor deposition layer 5. The superconducting quantum circuit 1 has a plurality of Josephson junctions (hereinafter also referred to as "JJ") 6 which are junctions for realizing a superconductor-insulator thin film-superconductor structure.

[0014] (Configuration of the substrate) Each pattern of the superconducting quantum circuit 1 is provided on the substrate 2. The substrate 2 has a substrate surface 2s. On the substrate surface 2s, there are portions where each pattern is formed and exposed portions. For example, the substrate 2 may be formed of a material such as silicon, sapphire, or compound semiconductor. For example, the substrate 2 may be formed of single crystal, polycrystal, amorphous, etc. For example, the substrate 2 may be a high-resistance semiconductor substrate.

[0015] Hereinafter, the direction in which each pattern is stacked is referred to as the Z direction. One direction in the substrate surface 2s is referred to as the X direction. Also, the direction intersecting the X direction in the substrate surface 2s is referred to as the Y direction. Also, one side of the X direction is the +X direction, and the other side of the X direction is the -X direction. Also, one side of the Y direction is the +Y direction, and the other side of the X direction is the -Y direction. Also, one side of the Z direction is the +Z direction, and the other side of the Z direction is the -Z direction. The X direction is also referred to as the deposition direction D1. Also, the Y direction is also referred to as the connection direction D2. Also, the Z direction is also referred to as the stacking direction D3.

[0016] For example, the X direction, the Y direction, and the Z direction may be mutually orthogonal directions. For example, the substrate surface 2s may be a surface along the XY plane and a surface facing the +Z direction. For example, the +Z direction may be the upward direction.

[0017] Also, unless otherwise specifically mentioned hereinafter, the shape and position of each pattern are the shape and position when viewed from the Z direction.

[0018] (Configuration of the superconductor layer) The superconductor layer 3 is laminated on the substrate surface 2s. The superconductor layer 3 includes a plurality of surface patterns 31 (main patterns) and a plurality of extension patterns 32. For example, the superconductor layer 3 may be formed by, for example, sputtering, vapor deposition, CVD (Chemical Vapor Deposition), or the like. For example, each pattern of the superconductor layer 3 may be patterned by reactive ion etching, wet etching, or the like. For example, each pattern of the superconductor layer 3 may be formed of Nb as the superconductor.

[0019] (Surface pattern) The plurality of surface patterns 31 include a ground pattern 31A and an electrode pattern 31B. Each surface pattern 31 is a planar pattern. For example, each pattern of the surface pattern 31 may be a pattern including at least a rectangular region having a vertical dimension and a horizontal dimension larger than each extension width (dimension in a direction orthogonal to the extending direction) of the plurality of extension patterns 32.

[0020] (Extension pattern) Each extension pattern 32 has an extension end 32e at the extended tip. For example, each extension pattern 32 has a strip shape extending in one direction, for example, the X direction. The plurality of extension patterns 32 include a pair of protrusion patterns 32A and an island pattern 32B.

[0021] Each of the pair of protrusion patterns 32A is a pattern continuous with the ground pattern 31A. Each of the pair of protrusion patterns 32A protrudes in the X direction from the ground pattern 31A such that the extension end 32e is the protruding end. In the present embodiment, the protruding ends of the pair of protrusion patterns 32A face each other. Specifically, among the pair of protrusion patterns 32A, the protrusion pattern 32A on the -X direction side protrudes in the +X direction from the ground pattern 31A. Also, among the pair of protrusion patterns 32A, the protrusion pattern 32A on the +X direction side protrudes in the -X direction from the ground pattern 31A. For example, the pair of protrusion patterns 32A may have the same length in the X direction as each other. For example, a pair of protrusion patterns 32A may have the same width in the Y direction as each other. For example, each protrusion pattern 32A may protrude from an end edge 31e extending in the Y direction of the ground pattern 31A with a width in the Y direction smaller than the length of the end edge 31e in the Y direction.

[0022] The island pattern 32B is separated from the plurality of surface patterns 31. In the present embodiment, the island pattern 32B is separated from the ground pattern 31A and the electrode pattern 31B. For example, the island pattern 32B may be separated from the pair of protrusion patterns 32A in the -Y direction. When viewed from the X direction, for example, the island pattern 32B may be located between the ground pattern 31A and the electrode pattern 31B and separated from the ground pattern 31A and the electrode pattern 31B. For example, when viewed from the Y direction, the island pattern 32B may extend between a pair of protrusion patterns 32A facing each other such that both ends of the island pattern 32B overlap with the protruding ends of the pair of protrusion patterns 32A facing each other. For example, the island pattern 32B may have the same width in the Y direction as the width in the Y direction of each protrusion pattern 32A.

[0023] (Configuration of the first vapor deposition layer) The first vapor deposition layer 4, together with the second vapor deposition layer 5, is a pattern for bridging the ground pattern 31A, the island pattern 32B, and the electrode pattern 31B via the Josephson junction 6. The first vapor deposition layer 4 is partially laminated on the superconductor layer 3. For example, the first vapor deposition layer 4 may be a vapor deposition layer vapor-deposited from an oblique direction with respect to the Z direction on the superconductor layer 3 by an oblique vapor deposition method. For example, the first vapor deposition layer 4 may be formed of Al as a superconductor.

[0024] As shown in FIG. 3, the first vapor deposition layer 4 includes a plurality of first vapor deposition patterns 41. A part of each first vapor deposition pattern 41 is laminated on the superconductor layer 3. For example, the plurality of first deposition patterns 41 may include a first deposition pattern 41A, a first deposition pattern 41B, a first deposition pattern 41C, and a first deposition pattern 41D. Each of the first deposition pattern 41A, the first deposition pattern 41B, the first deposition pattern 41C, and the first deposition pattern 41D has a strip shape extending in the Y direction.

[0025] The first deposition pattern 41A and the first deposition pattern 41B are located at the center in the Y direction and are arranged side by side in the X direction with a gap therebetween.

[0026] A portion on the -Y direction side of the first deposition pattern 41A is electrically connected to the island pattern 32B by overlapping with an extending end 32e on the -X direction side of the island pattern 32B. For example, with respect to an overlapping portion between the first deposition pattern 41A and the extending end 32e of the island pattern 32B, the extending end 32e on the -X direction side of the island pattern 32B may further extend in the -X direction from the overlapping portion.

[0027] A portion on the -Y direction side of the first deposition pattern 41B is electrically connected to the island pattern 32B by overlapping with an extending end 32e on the +X direction side of the island pattern 32B. For example, with respect to an overlapping portion between the first deposition pattern 41B and the extending end 32e of the island pattern 32B, the extending end 32e on the +X direction side of the island pattern 32B may further extend in the +X direction from the overlapping portion.

[0028] The first deposition pattern 41C and the first deposition pattern 41D are located closer to the -Y direction than the first deposition pattern 41A and the first deposition pattern 41B. The first deposition pattern 41C and the first deposition pattern 41D are arranged side by side in the Y direction with a gap therebetween. When viewed from the Y direction, the first deposition pattern 41C and the first deposition pattern 41D are located between the first deposition pattern 41A and the first deposition pattern 41B and are separated from the first deposition pattern 41A and the first deposition pattern 41B. The portion of the first vapor deposition pattern 41C on the +Y direction side is electrically connected to the island pattern 32B by overlapping on the central portion of the island pattern 32B in the X direction. The portion of the first vapor deposition pattern 41D on the -Y direction side is electrically connected to the electrode pattern 31B by overlapping on the central portion of the electrode pattern 31B in the X direction.

[0029] (Configuration of the second vapor deposition layer) The second vapor deposition layer 5 is partially laminated on the first vapor deposition layer 4. For example, the second vapor deposition layer 5 may be a vapor deposition layer deposited from an oblique direction different from the first vapor deposition layer 4 in the Z direction on the superconductor layer 3 by an oblique vapor deposition method following the first vapor deposition layer 4. For example, the second vapor deposition layer 5 may be formed of Al as a superconductor.

[0030] The second vapor deposition layer 5 includes a plurality of second vapor deposition patterns 51. A part of each second vapor deposition pattern 51 is laminated on the corresponding first vapor deposition pattern 41. For example, the plurality of second vapor deposition patterns 51 may include a second vapor deposition pattern 51A, a second vapor deposition pattern 51B, and a second vapor deposition pattern 51C. Each of the second vapor deposition pattern 51A, the second vapor deposition pattern 51B, and the second vapor deposition pattern 51C has a strip shape extending in the Y direction.

[0031] The second vapor deposition pattern 51A and the second vapor deposition pattern 51B are located closer to the +Y direction than the first vapor deposition pattern 41A and the first vapor deposition pattern 41B. The second vapor deposition pattern 51A and the second vapor deposition pattern 51B are arranged side by side in the X direction while being separated from each other. The second vapor deposition pattern 51A is partially overlapped and arranged on the first vapor deposition pattern 41A so as to be shifted in the +Y direction with respect to the first vapor deposition pattern 41A. The second vapor deposition pattern 51B is partially overlapped and arranged on the first vapor deposition pattern 41B so as to be shifted in the +Y direction with respect to the first vapor deposition pattern 41B.

[0032] The portion of the second vapor deposition pattern 51A on the +Y direction side overlaps with the portion of the extended end 32e of the protrusion pattern 32A on the -X direction side among the pair of protrusion patterns 32A, and is thus electrically connected to the protrusion pattern 32A on the -X direction side. For example, with respect to the overlapping portion between the second vapor deposition pattern 51A and the extended end 32e of the protrusion pattern 32A, the extended end 32e of the protrusion pattern 32A on the -X direction side may further extend in the +X direction from the overlapping portion.

[0033] The portion of the second vapor deposition pattern 51A on the -Y direction side overlaps with the portion of the first vapor deposition pattern 41A on the +Y direction side, and is thus electrically connected to the first vapor deposition pattern 41A via the Josephson junction 6. For example, the width in the X direction of the portion of the second vapor deposition pattern 51A on the -Y direction side may be wider than the width in the X direction of the other portions of the second vapor deposition pattern 51A in the portion overlapping with the first vapor deposition pattern 41A. For example, the width in the X direction of the portion of the second vapor deposition pattern 51A on the -Y direction side may be wider than the width in the X direction of the first vapor deposition pattern 41A in the portion overlapping with the first vapor deposition pattern 41A.

[0034] The portion of the second vapor deposition pattern 51B on the +Y direction side overlaps with the portion of the extended end 32e of the protrusion pattern 32A on the +X direction side among the pair of protrusion patterns 32A, and is thus electrically connected to the protrusion pattern 32A on the +X direction side. For example, with respect to the overlapping portion between the second vapor deposition pattern 51B and the extended end 32e of the protrusion pattern 32A, the extended end 32e of the protrusion pattern 32A on the +X direction side may further extend in the -X direction from the overlapping portion.

[0035] The portion of the second vapor deposition pattern 51B on the -Y direction side overlaps with the portion of the first vapor deposition pattern 41B on the +Y direction side, and is thus electrically connected to the first vapor deposition pattern 41B via the Josephson junction 6. For example, the width in the X direction of the portion on the -Y direction side of the second vapor deposition pattern 51B may be wider than the width in the X direction of other portions of the second vapor deposition pattern 51B in the portion overlapping with the first vapor deposition pattern 41B. For example, the width in the X direction of the portion on the -Y direction side of the second vapor deposition pattern 51B may be wider than the width in the X direction of the first vapor deposition pattern 41B in the portion overlapping with the first vapor deposition pattern 41B.

[0036] The second vapor deposition pattern 51C is arranged partially overlapping on the first vapor deposition pattern 41C so as to be shifted in the -Y direction with respect to the first vapor deposition pattern 41C. The portion on the +Y direction side of the second vapor deposition pattern 51C is electrically connected to the first vapor deposition pattern 41C via the Josephson junction 6 by overlapping on the portion on the -Y direction side of the first vapor deposition pattern 41C. For example, the width in the X direction of the portion on the +Y direction side of the second vapor deposition pattern 51C may be wider than the width in the X direction of the central portion in the Y direction of the second vapor deposition pattern 51C in the portion overlapping with the first vapor deposition pattern 41C. For example, the width in the X direction of the portion on the +Y direction side of the second vapor deposition pattern 51C may be wider than the width in the X direction of the first vapor deposition pattern 41C in the portion overlapping with the first vapor deposition pattern 41C.

[0037] The second vapor deposition pattern 51C is arranged partially overlapping on the first vapor deposition pattern 41D so as to be shifted in the +Y direction with respect to the first vapor deposition pattern 41D. The portion on the -Y direction side of the second vapor deposition pattern 51C is electrically connected to the first vapor deposition pattern 41D via the Josephson junction 6 by overlapping on the portion on the +Y direction side of the first vapor deposition pattern 41D. For example, the width in the X direction of the portion on the -Y direction side of the second vapor deposition pattern 51C may be wider than the width in the X direction of the central portion in the Y direction of the second vapor deposition pattern 51C in the portion overlapping with the first vapor deposition pattern 41D. For example, the width in the X direction of the portion on the -Y direction side of the second deposition pattern 51C may be wider than the width in the X direction of the first deposition pattern 41D in the portion overlapping with the first deposition pattern 41D.

[0038] (Configuration of Josephson Junction) The plurality of Josephson junctions 6 includes a first Josephson junction 6A, a second Josephson junction 6B, a third Josephson junction 6C, and a fourth Josephson junction 6D. The first Josephson junction 6A is formed in a portion where the first deposition pattern 41A and the second deposition pattern 51A overlap. The second Josephson junction 6B is formed in a portion where the first deposition pattern 41B and the second deposition pattern 51B overlap. The third Josephson junction 6C is formed in a portion where the first deposition pattern 41C and the second deposition pattern 51C overlap. The fourth Josephson junction 6D is formed in a portion where the first deposition pattern 41D and the second deposition pattern 51C overlap.

[0039] (Configuration of Nonlinear Inductor and Superconducting Quantum Interference Device) In the superconducting quantum circuit 1, the superconductor layer 3, the first deposition pattern 41, the second deposition pattern 51, and the Josephson junction 6 are electrically connected so as to constitute a SQUID 81. The superconducting quantum circuit 1 is configured with a nonlinear inductor 8 including the SQUID 81. Specifically, the nonlinear inductor 8 and the SQUID 81 are configured as follows.

[0040] The SQUID 81 includes a pair of protrusion patterns 32A, a part of the pattern of the ground pattern 31A, an island pattern 32B, the first deposition pattern 41A, the first deposition pattern 41B, the second deposition pattern 51A, the second deposition pattern 51B, the first Josephson junction 6A, and the second Josephson junction 6B. In the SQUID 81, one of the pair of protrusion patterns 32A, the second deposition pattern 51A, the first Josephson junction 6A, the first deposition pattern 41A, the island pattern 32B, the first deposition pattern 41B, the second Josephson junction 6B, the second deposition pattern 51B, the other of the pair of protrusion patterns 32A, and the ground pattern 31A are electrically connected in this order to form a loop. The ground pattern 31A functions as the terminal end of the SQUID 81.

[0041] In addition to the SQUID 81, the non - linear inductor 8 includes the first deposition pattern 41C, the third Josephson junction 6C, the second deposition pattern 51C, the fourth Josephson junction 6D, the first deposition pattern 41D, and the electrode pattern 31B. In the non - linear inductor 8, the SQUID 81 and the third Josephson junction 6C are electrically connected in series via the first deposition pattern 41C. Also, in the non - linear inductor 8, the third Josephson junction 6C and the fourth Josephson junction 6D are electrically connected in series via the second deposition pattern 51C. Also, in the non - linear inductor 8, the fourth Josephson junction 6D and the electrode pattern 31B are electrically connected in series via the first deposition pattern 41D.

[0042] (Steps of the manufacturing method) Hereinafter, the manufacturing method of the present embodiment will be described. The manufacturing method of the present embodiment is a method for manufacturing the superconducting quantum circuit 1.

[0043] As shown in FIG. 4, first, the manufacturer applies a resist on the substrate on which the superconductor layer 3 is laminated on the substrate surface 2s, and further forms a mask pattern (ST01: coating step).

[0044] Subsequent to the implementation of ST01, the manufacturer laminates a part of each first deposition pattern 41 on the superconductor layer 3 (ST02: first deposition step). For example, in ST02, the manufacturer may deposit the first deposition layer 4 made of Al by the oblique deposition method described later.

[0045] Following the implementation of ST02, the manufacturer oxidizes the surface of each first deposition pattern 41 (ST03: surface oxidation step). For example, in ST03, a predetermined film thickness of AlOx may be formed on the surface of the first deposition layer 4 made of Al by thermally oxidizing the surface of the first deposition layer 4.

[0046] Following the implementation of ST03, the manufacturer laminates a part of each second deposition pattern 51 on the corresponding first deposition pattern 41 (ST04: second deposition step). For example, in ST04, the manufacturer may deposit the second deposition layer 5 made of Al on the first deposition layer 4 by the oblique deposition method described later. In this embodiment, by implementing ST01 to ST04, a superconducting quantum circuit 1 including a superconductor layer 3, a first deposition pattern 41, a second deposition pattern 51, and a Josephson junction 6 is formed, and a superconducting quantum interference device 81 is provided.

[0047] Here, in an example of ST02 and ST04, each deposition layer is deposited using the oblique deposition method. In the oblique deposition method, the injection direction of the superconducting material is inclined with respect to the Z direction in the deposition direction D1. Also, in the oblique deposition method, the injection direction of the superconducting material is inclined to one side of the deposition direction D1 with respect to the Z direction in the first deposition, and to the other side of the deposition direction D1 with respect to the Z direction in the second deposition.

[0048] In a typical oblique deposition method, first, the manufacturer injects the superconducting material in the first irradiation direction DZ1 (see FIG. 8 described later) inclined in the -X direction with respect to the -Z direction, and performs oblique deposition of the first deposition film. As a result, each pattern of the first deposition film is formed at a position shifted in the -X direction with respect to the X-direction position of each opening of the resist. Subsequently, after performing surface oxidation of the first vapor deposition film, the manufacturer injects a superconducting material in a second irradiation direction DZ2 (see FIG. 8 described later) that is inclined in the +X direction with respect to the -Z direction, and performs oblique vapor deposition of the second vapor deposition film. As a result, each pattern of the second vapor deposition film is formed at a position shifted in the +X direction with respect to the X-direction position of each opening of the resist. At this time, a Josephson junction is formed at a portion where the first vapor deposition film and the second vapor deposition film overlap. By such an oblique vapor deposition method, for example, for a mask pattern as shown in FIG. 5, patterns of each vapor deposition film as shown in FIG. 6 can be formed.

[0049] In the present embodiment, by using a resist RS having an opening OP as shown in FIG. 7, each pattern as shown in FIGS. 1 and 2 is formed. Note that according to the oblique vapor deposition method, among the vapor deposition patterns shown in FIG. 6, isolated vapor deposition patterns that are not related to Josephson junctions, such as the vapor deposition patterns shown on the left and right, are also simultaneously vapor deposited. Therefore, in the plan view of the superconducting quantum circuit according to the present disclosure including FIGS. 1 and 2, such isolated vapor deposition patterns that are not related to Josephson junctions are omitted.

[0050] (Operation and Effect) According to the superconducting quantum circuit 1 of the present embodiment, the extension pattern 32 of the superconductor layer 3 extends to the first vapor deposition pattern 41 and the second vapor deposition pattern 51. Therefore, the first vapor deposition layer 4 and the second vapor deposition layer 5 can be configured such that the first vapor deposition pattern 41 and the second vapor deposition pattern 51 are shortened. Therefore, the superconducting quantum circuit 1 is easy to form with a vapor deposition pattern.

[0051] For example, as Comparative Example 1, as shown in FIG. 8, when using the oblique vapor deposition method from two directions, namely the first irradiation direction DZ1 and the second irradiation direction DZ2, if there is an opening that is long in the vapor deposition direction, a Josephson junction having an area approximately the same as that of the opening is formed directly below the opening. Such a junction has a very large critical current value proportional to the area and can be approximated as a simple superconducting wire, but there is a possibility that the behavior of the non-linear inductor deviates from the design value. In addition, a superconductor deposited obliquely (hereinafter also referred to as "SES") through processes such as resist coating contains defects such as resist residues, and thus generally has worse characteristics compared to a superconductor (hereinafter also referred to as "GS") deposited on one surface of a high-resistance semiconductor substrate. Moreover, since SES uses superconductors with low superconducting transition temperatures such as Al, there is also a possibility that the characteristics of the quantum circuit deteriorate due to quasiparticles, and it is desirable to make the structure of the non-linear inductor as small as possible.

[0052] Superconducting quantum circuits are widely used as quantum bits. A Josephson parametric oscillator (JPO), which is a type of superconducting quantum circuit and is excited by periodically varying the resonance frequency at a frequency close to its harmonic, is expected to be applied to a quantum annealer, but a lower Kerr non-linearity is required compared to a transmon qubit used in gate-type quantum computing and the like. To reduce the Kerr non-linearity, as Comparative Example 2, as shown in FIG. 9, for a superconducting quantum circuit, it is effective to be composed of a SQUID and a JJ with non-linear inductors connected in series according to the vapor deposition pattern. However, when the number of SESs with a series structure increases, in a vapor deposition pattern formed by a long opening in a direction parallel to the vapor deposition direction D1, such as the vapor deposition pattern AA shown in FIG. 9, according to the principle shown in FIG. 8, a Josephson junction having an area approximately the same as that of the opening will inevitably be formed in the SQUID part.

[0053] For Comparative Example 1 and Comparative Example 2, the superconducting quantum circuit 1 of the present embodiment is not composed only of an SES in which a non-linear inductor including, for example, a SQUID and a JJ is obliquely deposited, but the termination portion and the coupling portion between the SQUID and the JJ are composed of a GS deposited on the substrate surface. That is, as shown in FIGS. 1 and 2, the superconducting quantum circuit 1 of the present embodiment is configured such that the non-linear inductor has a GS island pattern and a GS protrusion pattern in addition to the SES. Therefore, the superconducting quantum circuit 1 of the present embodiment has a structure in which the superconducting quantum circuit and the ground are bridged by a non-linear inductor in which the SQUID and the JJ are connected in series. According to such a structure, the SQUID and the JJ bridge the ground pattern, the island pattern, and the electrode pattern, which are composed of the GS left in the high-resistance semiconductor exposed surface. Thereby, in addition to reducing the amount of SES that can increase the loss of qubits, a structure long in the deposition direction is formed by the GS. Therefore, the superconducting quantum circuit 1 can be configured so as not to generate a JJ due to an opening long in the deposition direction.

[0054] Note that the boundary between the GS and the SES needs to take into account the displacement of the position due to oblique deposition. Therefore, considering that the superconductor is deposited with a displacement in the X direction by oblique deposition, each extension end 32e is provided with an overlap margin longer in the X direction than the overlapping portion. That is, in an example of the superconducting quantum circuit 1 of the present embodiment, the extension end 32e extends further in the X direction than the overlapping portion. For example, in the superconducting quantum circuit 1, as shown in FIGS. 1 and 2, at the overlapping portion between the second deposition pattern 51A, which is the connection portion between the SES on the left side of the SQUID and the GS, and the extension end 32e of the protrusion pattern 32A, an overlap margin longer in the X direction than the overlapping portion is provided. Further, for example, in an example of the superconducting quantum circuit 1, as shown in FIGS. 1 and 2, in an example of the superconducting quantum circuit 1, an overlap margin longer in the X direction than the overlap portion is also provided at the overlap portion between the first deposition pattern 41A and the extended end 32e of the island pattern 32B.

[0055] Also, according to the superconducting quantum circuit 1 of the present embodiment, the protrusion pattern 32A of the superconductor layer 3 protrudes from the surface pattern 31 and extends to the first deposition pattern 41 and the second deposition pattern 51. Thereby, among the respective deposition patterns, the portion extending toward the surface pattern 31 can be replaced with the pattern of the superconductor layer 3. Therefore, the first deposition layer 4 and the second deposition layer 5 can be configured such that each deposition pattern becomes shorter. Therefore, the superconducting quantum circuit 1 is easy to form with a deposition pattern.

[0056] Also, according to the superconducting quantum circuit 1 of the present embodiment, the island pattern 32B of the superconductor layer 3 is separated from the surface pattern 31. Thereby, among the respective deposition patterns, the portion different from the portion toward the surface pattern 31 can be replaced with the pattern of the superconductor layer 3. Therefore, the first deposition layer 4 and the second deposition layer 5 can be configured such that each deposition pattern becomes shorter. Therefore, the superconducting quantum circuit 1 is easy to form with a deposition pattern.

[0057] Also, according to the superconducting quantum circuit 1 of the present embodiment, the extension pattern 32 extends in the X direction which is the direction intersecting the connection direction D2. Therefore, at least a part of the portion of the deposition pattern that extends intersecting the connection direction D2 can be replaced with the pattern of the superconductor layer 3. Therefore, the first deposition layer 4 and the second deposition layer 5 can be configured such that the deposition pattern becomes shorter. Therefore, the superconducting quantum circuit 1 is easy to form with a deposition pattern.

[0058] In addition, the superconducting quantum circuit 1 of this embodiment includes a SQUID 81. Therefore, by flowing a direct current through the pump line coupled to the SQUID 81 to adjust the inductance of the SQUID 81 or the like, the resonance frequency can be changed.

[0059] In addition, the superconducting quantum circuit 1 of this embodiment includes a non-linear inductor 8 including the SQUID 81. According to such a configuration, since the SQUID 81 can be treated as a variable inductance, the superconducting quantum circuit 1 can excite a resonance mode having non-linearity. When there is non-linearity, the transition frequency between the ground state (|0>) and the first excited state (|1>) of the resonator is different from the transition frequencies of other states (|2> or higher), so that the superconducting quantum circuit 1 can be treated as a system consisting of only two states of |0> / |1>, that is, a qubit.

[0060] In addition, according to the manufacturing method of this embodiment, in the manufactured superconducting quantum circuit 1, the stretching pattern 32 of the superconductor layer 3 extends to the first vapor deposition pattern 41 and the second vapor deposition pattern 51. Therefore, in the manufactured superconducting quantum circuit 1, the first vapor deposition layer 4 and the second vapor deposition layer 5 can be configured so that the first vapor deposition pattern 41 and the second vapor deposition pattern 51 are shortened. Therefore, according to this manufacturing method, the superconducting quantum circuit 1 can be easily formed with a vapor deposition pattern.

[0061] <Second Embodiment> Hereinafter, an embodiment according to the present disclosure will be described with reference to the drawings. The superconducting quantum circuit 101 of this embodiment has the same configuration as the superconducting quantum circuit 1 of the first embodiment, operates in the same manner, is manufactured in the same manner, and has the same actions and the same effects, except for the points shown below. For example, the plurality of stretching patterns 32 of this embodiment may include a pair of protrusion patterns 132A and an island pattern 132B instead of or in addition to the pair of protrusion patterns 32A and the island pattern 32B of the first embodiment. For example, the plurality of first deposition patterns 41 of the present embodiment may include first deposition patterns 141A to 141D instead of (or in addition to) first deposition patterns 41A to 41D. For example, the plurality of second deposition patterns 51 of the present embodiment may include second deposition patterns 151A to 151C instead of (or in addition to) second deposition patterns 51A to 51C. For example, the plurality of Josephson junctions 6 of the present embodiment may include first Josephson junctions 106A to 106D instead of (or in addition to) first Josephson junctions 6A to 6D. Specifically, it is shown below.

[0062] As shown in FIG. 10, the superconducting quantum circuit 101 includes a substrate 2, a superconductor layer 3, a first deposition layer 4, and a second deposition layer 5. The superconducting quantum circuit 101 has a plurality of Josephson junctions 6.

[0063] (Configuration of the superconductor layer) In the superconductor layer 3, a pair of protrusion patterns 132A and an island pattern 132B are included. Each protrusion pattern 132A is a pattern continuous with the ground pattern 31A. Each protrusion pattern 132A protrudes in the Y direction from the ground pattern 31A with the extension end 32e as the protrusion end. Specifically, among the pair of protrusion patterns 132A, the protrusion pattern 132A on the -X direction side protrudes in the +Y direction from the ground pattern 31A, bends in the +X direction from the tip protruding in the +Y direction, and further extends in the +X direction. Also, among the pair of protrusion patterns 132A, the protrusion pattern 132A on the +X direction side protrudes in the +Y direction from the ground pattern 31A, bends in the -X direction from the tip protruding in the +Y direction, and further extends in the -X direction. For example, each protrusion pattern 132A may protrude from the end side 31e extending in the X direction of the ground pattern 31A with an X direction width smaller than the X direction length of the end side 31e. For example, the portion of each protrusion pattern 132A that protrudes and extends in the Y direction may have a constant width in the X direction throughout. For example, the portion of each protrusion pattern 132A that protrudes and extends in the X direction may have a constant width in the Y direction throughout, and may be the same as the width in the X direction of the portion of each protrusion pattern 132A that protrudes and extends in the Y direction. For example, each protrusion pattern 132A may be an L-shaped pattern that bends at a right angle from the portion that protrudes and extends in the Y direction to the portion that extends in the X direction as a whole. The pair of protrusion patterns 132A may have the same shape and the same size as each other.

[0064] The island pattern 132B is separated from the plurality of surface patterns 31. In the present embodiment, the island pattern 132B is separated from the ground pattern 31A and the electrode pattern 31B. For example, the island pattern 132B may be separated from the pair of protrusion patterns 132A in the +Y direction. When viewed from the X direction, for example, the island pattern 132B may be located between the ground pattern 31A and the electrode pattern 31B and may be separated from the ground pattern 31A and the electrode pattern 31B. When viewed from the Y direction, for example, the island pattern 132B may extend between the pair of protrusion patterns 132A facing each other such that both ends of the island pattern 132B overlap with the protruding ends of the pair of protrusion patterns 132A facing each other. For example, the island pattern 132B may have the same width in the Y direction as the width in the Y direction of the portion of each protrusion pattern 132A that protrudes and extends in the X direction.

[0065] (Configuration of the first vapor deposition layer) The first vapor deposition layer 4, together with the second vapor deposition layer 5, is a pattern for bridging the ground pattern 31A, the island pattern 132B, and the electrode pattern 31B via the Josephson junction 6. As shown in FIG. 11, in the first vapor deposition layer 4, for example, the plurality of first vapor deposition patterns 41 may include a first vapor deposition pattern 141A, a first vapor deposition pattern 141B, a first vapor deposition pattern 141C, and a first vapor deposition pattern 141D. Each of the first vapor deposition pattern 141A, the first vapor deposition pattern 141B, the first vapor deposition pattern 141C, and the first vapor deposition pattern 141D has a strip shape extending in the Y direction.

[0066] The first vapor deposition pattern 141A and the first vapor deposition pattern 141B are located at the center in the Y direction and are arranged side by side in the X direction with a distance therebetween.

[0067] The +Y direction side portion of the first vapor deposition pattern 141A is electrically connected to the island pattern 132B by overlapping with the -X direction side extension end 32e of the island pattern 132B. For example, with respect to the overlapping portion between the first vapor deposition pattern 141A and the extension end 32e of the island pattern 132B, the -X direction side extension end 32e of the island pattern 132B may further extend in the -X direction from the overlapping portion.

[0068] The +Y direction side portion of the first vapor deposition pattern 141B is electrically connected to the island pattern 132B by overlapping with the +X direction side extension end 32e of the island pattern 132B. For example, with respect to the overlapping portion between the first vapor deposition pattern 141B and the extension end 32e of the island pattern 132B, the +X direction side extension end 32e of the island pattern 132B may further extend in the +X direction from the overlapping portion.

[0069] The first vapor deposition pattern 141C and the first vapor deposition pattern 141D are located closer to the +Y direction than the first vapor deposition pattern 141A and the first vapor deposition pattern 141B. The first vapor deposition pattern 141C and the first vapor deposition pattern 141D are arranged side by side in the Y direction with a distance therebetween. When viewed from the Y direction, the first vapor deposition patterns 141C and 141D are located between the first vapor deposition patterns 141A and 141B and are separated from the first vapor deposition patterns 141A and 141B. The -Y direction side portion of the first vapor deposition pattern 141C is electrically connected to the island pattern 132B by overlapping the central portion of the island pattern 132B in the X direction. The +Y direction side portion of the first vapor deposition pattern 141D is electrically connected to the electrode pattern 31B by overlapping the central portion of the electrode pattern 31B in the X direction.

[0070] (Configuration of the second vapor deposition layer) In the second vapor deposition layer 5, for example, the plurality of second vapor deposition patterns 51 may include a second vapor deposition pattern 151A, a second vapor deposition pattern 151B, and a second vapor deposition pattern 151C. Each of the second vapor deposition pattern 151A, the second vapor deposition pattern 151B, and the second vapor deposition pattern 151C has a strip shape extending in the Y direction.

[0071] The second vapor deposition patterns 151A and 151B are located closer to the -Y direction than the first vapor deposition patterns 141A and 141B. The second vapor deposition patterns 151A and 151B are arranged side by side in the X direction while being separated from each other.

[0072] The second vapor deposition pattern 151A is arranged partially overlapping on the first vapor deposition pattern 141A so as to be displaced in the -Y direction with respect to the first vapor deposition pattern 141A. The second vapor deposition pattern 151B is arranged partially overlapping on the first vapor deposition pattern 141B so as to be displaced in the -Y direction with respect to the first vapor deposition pattern 141B.

[0073] The -Y direction side portion of the second vapor deposition pattern 151A is electrically connected to the -X direction side protrusion pattern 132A by overlapping the portion of the extension end 32e of the -X direction side protrusion pattern 132A among the pair of protrusion patterns 132A. For example, with respect to the overlapping portion between the second vapor deposition pattern 151A and the extended end 32e of the protrusion pattern 132A, the extended end 32e of the protrusion pattern 132A on the -X direction side may further extend in the +X direction from the overlapping portion.

[0074] The portion of the second vapor deposition pattern 151A on the +Y direction side is electrically connected to the first vapor deposition pattern 141A via the Josephson junction 6 by overlapping with the portion of the first vapor deposition pattern 141A on the -Y direction side. For example, the width in the X direction of the portion of the second vapor deposition pattern 151A on the +Y direction side may be wider than the width in the X direction of other portions of the second vapor deposition pattern 151A in the portion overlapping with the first vapor deposition pattern 141A. For example, the width in the X direction of the portion of the second vapor deposition pattern 151A on the -Y direction side may be wider than the width in the X direction of the first vapor deposition pattern 141A in the portion overlapping with the first vapor deposition pattern 141A.

[0075] The portion of the second vapor deposition pattern 151B on the -Y direction side is electrically connected to the protrusion pattern 132A on the +X direction side by overlapping with the portion of the extended end 32e of the protrusion pattern 132A on the +X direction side among the pair of protrusion patterns 132A. For example, with respect to the overlapping portion between the second vapor deposition pattern 151B and the extended end 32e of the protrusion pattern 132A, the extended end 32e of the protrusion pattern 132A on the +X direction side may further extend in the -X direction from the overlapping portion.

[0076] The portion of the second vapor deposition pattern 151B on the +Y direction side is electrically connected to the first vapor deposition pattern 141B via the Josephson junction 6 by overlapping with the portion of the first vapor deposition pattern 141B on the -Y direction side. For example, the width in the X direction of the portion of the second vapor deposition pattern 151B on the +Y direction side may be wider than the width in the X direction of other portions of the second vapor deposition pattern 151B in the portion overlapping with the first vapor deposition pattern 141B. For example, the width in the X direction of the +Y direction side portion of the second vapor deposition pattern 151B may be wider than the width in the X direction of the first vapor deposition pattern 141B in the portion overlapping with the first vapor deposition pattern 141B.

[0077] The second vapor deposition pattern 151C is arranged partially overlapping on the first vapor deposition pattern 141C so as to be shifted in the +Y direction with respect to the first vapor deposition pattern 141C. The -Y direction side portion of the second vapor deposition pattern 151C is electrically connected to the first vapor deposition pattern 141C via the Josephson junction 6 by overlapping on the +Y direction side portion of the first vapor deposition pattern 141C. For example, the width in the X direction of the -Y direction side portion of the second vapor deposition pattern 151C may be wider than the width in the X direction of the central portion in the Y direction of the second vapor deposition pattern 151C in the portion overlapping with the first vapor deposition pattern 141C. For example, the width in the X direction of the -Y direction side portion of the second vapor deposition pattern 151C may be wider than the width in the X direction of the first vapor deposition pattern 141C in the portion overlapping with the first vapor deposition pattern 141C.

[0078] The second vapor deposition pattern 151C is arranged partially overlapping on the first vapor deposition pattern 141D so as to be shifted in the -Y direction with respect to the first vapor deposition pattern 141D. The +Y direction side portion of the second vapor deposition pattern 151C is electrically connected to the first vapor deposition pattern 141D via the Josephson junction 6 by overlapping on the -Y direction side portion of the first vapor deposition pattern 141D. For example, the width in the X direction of the +Y direction side portion of the second vapor deposition pattern 151C may be wider than the width in the X direction of the central portion in the Y direction of the second vapor deposition pattern 151C in the portion overlapping with the first vapor deposition pattern 141D. For example, the width in the X direction of the +Y direction side portion of the second vapor deposition pattern 151C may be wider than the width in the X direction of the first vapor deposition pattern 141D in the portion overlapping with the first vapor deposition pattern 141D.

[0079] (Configuration of Josephson junction) In the present embodiment, the plurality of Josephson junctions 6 includes a first Josephson junction 106A, a second Josephson junction 106B, a third Josephson junction 106C, and a fourth Josephson junction 106D. The first Josephson junction 106A is formed at a portion where the first vapor deposition pattern 141A and the second vapor deposition pattern 151A overlap. The second Josephson junction 106B is formed at a portion where the first vapor deposition pattern 141B and the second vapor deposition pattern 151B overlap. The third Josephson junction 106C is formed at a portion where the first vapor deposition pattern 141C and the second vapor deposition pattern 151C overlap. The fourth Josephson junction 106D is formed at a portion where the first vapor deposition pattern 141D and the second vapor deposition pattern 151C overlap.

[0080] (Configuration of Nonlinear Inductor and Superconducting Quantum Interference Device) In the superconducting quantum circuit 101, the superconductor layer 3, the first vapor deposition pattern 41, the second vapor deposition pattern 51, and the Josephson junction 6 are electrically connected so as to constitute a SQUID 181. The nonlinear inductor 108 includes the SQUID 181. The nonlinear inductor 108 and the SQUID 181 are specifically configured as follows.

[0081] The SQUID 181 includes a pair of protrusion patterns 132A, a partial pattern of the ground pattern 31A, an island pattern 132B, the first vapor deposition pattern 141A, the first vapor deposition pattern 141B, the second vapor deposition pattern 151A, the second vapor deposition pattern 151B, the first Josephson junction 106A, and the second Josephson junction 106B. In the SQUID 181, one of the pair of protrusion patterns 132A, the second deposition pattern 151A, the first Josephson junction 106A, the first deposition pattern 141A, the island pattern 132B, the first deposition pattern 141B, the second Josephson junction 106B, the second deposition pattern 151B, the other of the pair of protrusion patterns 132A, and the ground pattern 31A are electrically connected in this order so as to form a loop.

[0082] In addition to the SQUID 181, the non-linear inductor 108 includes a first deposition pattern 141C, a third Josephson junction 106C, a second deposition pattern 151C, a fourth Josephson junction 106D, a first deposition pattern 141D, and an electrode pattern 31B. In the non-linear inductor 108, the SQUID 181 and the third Josephson junction 106C are electrically connected in series via the first deposition pattern 141C. Also, in the non-linear inductor 108, the third Josephson junction 106C and the fourth Josephson junction 106D are electrically connected in series via the second deposition pattern 151C. Also, in the non-linear inductor 108, the fourth Josephson junction 106D and the electrode pattern 31B are electrically connected in series via the first deposition pattern 141D.

[0083] (Function and Effect) According to the superconducting quantum circuit 101 of the present embodiment, the extension pattern 32 of the superconductor layer 3 extends to the first deposition pattern 41 and the second deposition pattern 51. Therefore, the first deposition layer 4 and the second deposition layer 5 can be configured so that the first deposition pattern 41 and the second deposition pattern 51 are shortened. Therefore, the superconducting quantum circuit 101 is easy to form with a deposition pattern.

[0084] Also, according to the superconducting quantum circuit 101 of the present embodiment, the protrusion pattern 132A of the superconductor layer 3 protrudes from the surface pattern 31 and extends to the first deposition pattern 41 and the second deposition pattern 51. As a result, among each vapor deposition pattern, a portion extending toward the planar pattern 31 can be replaced with the pattern of the superconductor layer 3. Therefore, the first vapor deposition layer 4 and the second vapor deposition layer 5 can be configured such that each vapor deposition pattern becomes shorter. Accordingly, the superconducting quantum circuit 101 can be easily formed with a vapor deposition pattern.

[0085] Further, according to the superconducting quantum circuit 101 of the present embodiment, the island pattern 132B of the superconductor layer 3 is separated from the planar pattern 31. As a result, among each vapor deposition pattern, a portion different from the portion toward the planar pattern 31 can be replaced with the pattern of the superconductor layer 3. Therefore, the first vapor deposition layer 4 and the second vapor deposition layer 5 can be configured such that each vapor deposition pattern becomes shorter. Accordingly, the superconducting quantum circuit 101 can be easily formed with a vapor deposition pattern.

[0086] Furthermore, the superconducting quantum circuit 101 has the same operations and effects as those of the superconducting quantum circuit 1 and the method for manufacturing the same described above.

[0087] In addition, according to the superconducting quantum circuit 101 of the present embodiment, the extension pattern 32 extends in the Y direction which is the connection direction D2. Therefore, at least a part of the portion of the vapor deposition pattern that extends in the connection direction D2 can be replaced with the pattern of the superconductor layer 3. Therefore, the first vapor deposition layer 4 and the second vapor deposition layer 5 can be configured such that the vapor deposition pattern becomes shorter. Accordingly, the superconducting quantum circuit 101 can be easily formed with a vapor deposition pattern.

[0088] <Modification Example> In each of the above-described embodiments, the superconductor layer 3 includes the planar pattern 31 as the main pattern. However, if it is laminated on the substrate surface 2s, the main pattern may be any pattern. As a modification example, the main pattern may be a linear pattern instead of a planar pattern.

[0089] In each of the above embodiments, the extended pattern 32 of the superconductor layer 3 extends to the first deposition pattern 41 and the second deposition pattern 51. However, as long as the deposition pattern can be shortened, it may be configured in any way. As a modification, the extended pattern 32 of the superconductor layer 3 may extend to at least one of the first deposition pattern 41 and the second deposition pattern 51. Even with such a modification, the deposition pattern can be shortened, so the superconducting quantum circuit is easy to form with the deposition pattern.

[0090] In each of the above embodiments, the second deposition layer 5 is partially laminated on the first deposition layer 4 by the oblique deposition method. However, as long as the Josephson junction 6 can be formed, the second deposition layer 5 may be partially laminated on the first deposition layer 4 by any method. Regardless of the configuration of the Josephson junction and the deposition method, as long as the deposition pattern can be shortened, the superconducting quantum circuit is easy to form with the deposition pattern.

[0091] In each of the above embodiments, the non-linear inductor includes a SQUID and a pair of Josephson junctions. However, as long as the non-linear inductor can be configured, it may be configured in any way. As a modification, the non-linear inductor may include a plurality of SQUIDs and a plurality of pairs of Josephson junctions. In that case, the plurality of SQUIDs and the plurality of pairs of Josephson junctions may be connected in any order.

[0092] In each of the above embodiments, the extended pattern extends in at least one of the X direction and the Y direction. However, as long as the deposition pattern can be shortened, it may extend in any direction. As a modification, the extended pattern may extend in an oblique direction with respect to the X direction and the Y direction. Even with such a modification, the deposition pattern can be shortened, so the superconducting quantum circuit is easy to form with the deposition pattern.

[0093] In each of the above embodiments, the second vapor deposition layer 5 is partially laminated on the first vapor deposition layer 4. As a modification, the first vapor deposition layer 4 may be partially laminated on the second vapor deposition layer 5. Even with such a modification, the vapor deposition pattern can be shortened, so that the superconducting quantum circuit can be easily formed with the vapor deposition pattern.

[0094] In each of the above embodiments, the second vapor deposition pattern 51 is electrically connected to the protrusion pattern by overlapping on the portion of the extension end 32e of the protrusion pattern. However, as long as at least one of the first vapor deposition pattern 41 and the second vapor deposition pattern 51 is electrically connected to the protrusion pattern, it may be configured in any way. As a modification, the first vapor deposition pattern 41 electrically connected to the second vapor deposition pattern 51 via the Josephson junction 6 may be electrically connected to the protrusion pattern by overlapping on the portion of the extension end 32e of the protrusion pattern. Even with such a modification, the vapor deposition pattern can be shortened, so that the superconducting quantum circuit can be easily formed with the vapor deposition pattern.

[0095] In each of the above embodiments, the second vapor deposition pattern 51 is electrically connected to the protrusion pattern by overlapping on the portion of the extension end 32e of the protrusion pattern. However, as long as at least one of the first vapor deposition pattern 41 and the second vapor deposition pattern 51 is electrically connected to the protrusion pattern, it may be configured in any way. As a modification, the second vapor deposition pattern 51 may be electrically connected to the protrusion pattern by overlapping on a portion other than the extension end 32e of the protrusion pattern (for example, a portion of the protrusion pattern closer to the edge 31e than the extension end 32e). As another modification, the first vapor deposition pattern 41 may be electrically connected to the protrusion pattern by overlapping on a portion other than the extension end 32e of the protrusion pattern (for example, a portion of the protrusion pattern closer to the edge 31e than the extension end 32e). Even with such a modification, the vapor deposition pattern can be shortened, so that the superconducting quantum circuit can be easily formed with the vapor deposition pattern.

[0096] In each of the above embodiments, the first vapor deposition pattern 41 is electrically connected to the island pattern by overlapping the extended end 32e of the island pattern. However, as long as at least one of the first vapor deposition pattern 41 and the second vapor deposition pattern 51 is electrically connected to the island pattern, it may be configured in any way. As a modification, the second vapor deposition pattern 51 electrically connected to the first vapor deposition pattern 41 via the Josephson junction 6 may be electrically connected to the island pattern by overlapping the extended end 32e of the island pattern. Even with such a modification, the vapor deposition pattern can be shortened, so the superconducting quantum circuit is easy to form with the vapor deposition pattern.

[0097] In each of the above embodiments, the first vapor deposition pattern 41 is electrically connected to the island pattern by overlapping the extended end 32e of the island pattern. However, as long as at least one of the first vapor deposition pattern 41 and the second vapor deposition pattern 51 is electrically connected to the island pattern, it may be configured in any way. As a modification, the first vapor deposition pattern 41 may be electrically connected to the island pattern by overlapping a portion other than the extended end 32e of the island pattern (for example, a portion between the extended ends 32e of the island pattern). As another modification, the second vapor deposition pattern 51 may be electrically connected to the island pattern by overlapping a portion other than the extended end 32e of the island pattern (for example, a portion between the extended ends 32e of the island pattern). Even with such a modification, the vapor deposition pattern can be shortened, so the superconducting quantum circuit is easy to form with the vapor deposition pattern.

[0098] <Third Embodiment> Hereinafter, an embodiment according to the present disclosure will be described with reference to the drawings.

[0099] (Configuration of Superconducting Quantum Circuit) As shown in FIG. 12, the superconducting quantum circuit 201 of this embodiment includes a substrate 202, a superconductor layer 203, a first vapor deposition pattern 241, and a second vapor deposition pattern 251. The superconducting layer 203 is laminated on the substrate 202 and includes a main pattern 231 and an extension pattern 232. A part of the first vapor deposition pattern 241 is laminated on the superconducting layer 203. A part of the second vapor deposition pattern 251 is laminated on the first vapor deposition layer 204. The superconducting quantum circuit 201 has a Josephson junction 206 at the overlapping portion of the first vapor deposition pattern 241 and the second vapor deposition pattern 251. The extension pattern 232 is connected to at least one of the first vapor deposition pattern 241 and the second vapor deposition pattern 251.

[0100] (Function and effect) According to the superconducting quantum circuit 201 of the present embodiment, the extension pattern 232 of the superconducting layer 203 extends to at least one of the first vapor deposition pattern 241 and the second vapor deposition pattern 251. Therefore, at least one of the first vapor deposition layer 204 and the second vapor deposition layer 205 can be configured so that at least one of the first vapor deposition pattern 241 and the second vapor deposition pattern 251 becomes shorter. Therefore, the superconducting quantum circuit 201 is easy to form with a vapor deposition pattern.

[0101] <Fourth Embodiment> Hereinafter, an embodiment according to the present disclosure will be described with reference to the drawings.

[0102] (Steps of the manufacturing method) As shown in FIG. 13, first, a part of the first vapor deposition pattern is laminated on a superconducting layer laminated on a substrate and including a main pattern and an extension pattern (ST101). The surface of the first vapor deposition pattern is oxidized (ST102: surface oxidation step). A part of the second vapor deposition pattern is laminated on the first vapor deposition pattern (ST103). A Josephson junction is formed at the overlapping portion of the first vapor deposition pattern and the second vapor deposition pattern. The extension pattern is connected to at least one of the first vapor deposition pattern and the second vapor deposition pattern.

[0103] (Function and Effect) According to the manufacturing method of this embodiment, in the superconducting quantum circuit to be manufactured, the stretching pattern of the superconductor layer extends to at least one of the first vapor deposition pattern and the second vapor deposition pattern. Therefore, in the superconducting quantum circuit to be manufactured, at least one of the first vapor deposition layer and the second vapor deposition layer can be configured so that at least one of the first vapor deposition pattern and the second vapor deposition pattern becomes shorter. Therefore, the manufacturing method can easily form a superconducting quantum circuit with a vapor deposition pattern.

[0104] As described above, the embodiments of the present disclosure have been described. However, this embodiment is shown as an example and is not intended to limit the scope of the present disclosure. This embodiment can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the gist of the present disclosure. And each embodiment can be combined with other embodiments as appropriate.

[0105] Some or all of the above embodiments can also be described as follows in the appended claims, but are not limited thereto.

[0106] (Appended Claim 1) A substrate, A superconductor layer laminated on the substrate, including a main pattern and a stretching pattern, A first vapor deposition pattern partially laminated on the superconductor layer, A second vapor deposition pattern partially laminated on the first vapor deposition pattern, Comprising, The overlapping portion of the first vapor deposition pattern and the second vapor deposition pattern has a Josephson junction, The stretching pattern is connected to at least one of the first vapor deposition pattern and the second vapor deposition pattern, A superconducting quantum circuit.

[0107] (Appended Claim 2) The extension pattern protrudes from the main pattern such that the extension end is a protruding end. The superconducting quantum circuit according to Appendix 1.

[0108] (Appendix 3) The extension pattern is separated from the main pattern. The superconducting quantum circuit according to Appendix 1.

[0109] (Appendix 4) The first vapor deposition pattern and the second vapor deposition pattern overlap and are arranged so as to be displaced in the connection direction, The extension pattern extends in a direction intersecting the connection direction. The superconducting quantum circuit according to any one of Appendices 1 to 3.

[0110] (Appendix 5) The first vapor deposition pattern and the second vapor deposition pattern overlap and are arranged so as to be displaced in the connection direction, The extension pattern extends in the connection direction. The superconducting quantum circuit according to any one of Appendices 1 to 3.

[0111] (Appendix 6) The superconductor layer, the first vapor deposition pattern, the second vapor deposition pattern, and the Josephson junction are connected so as to form a superconducting quantum interference device. The superconducting quantum circuit according to any one of Appendices 1 to 5.

[0112] (Appendix 7) A non-linear inductor including the superconducting quantum interference device is formed. The superconducting quantum circuit according to Appendix 6.

[0113] (Appendix 8) The superconducting quantum circuit according to any one of Appendices 1 to 7, A coupling part capable of coupling with a coupler, Comprising A qubit.

[0114] (Appendix 9) Comprising a plurality of qubits described in Appendix 8, Further comprising a coupler for coupling the coupling parts to each other across the plurality of qubits. Quantum computer.

[0115] (Appendix 10) Laminating a part of the first vapor deposition pattern on a superconductor layer laminated on a substrate and including a main pattern and an extended pattern, Oxidizing the surface of the first vapor deposition pattern, Laminating a part of the second vapor deposition pattern on the first vapor deposition pattern, A Josephson junction is formed at an overlapping portion between the first vapor deposition pattern and the second vapor deposition pattern, The extended pattern is connected to at least one of the first vapor deposition pattern and the second vapor deposition pattern. Manufacturing method.

[0116] (Appendix 11) The extended pattern protrudes from the main pattern such that the extended end is a protruding end. The manufacturing method according to Appendix 10.

[0117] (Appendix 12) The extended pattern is separated from the main pattern. The manufacturing method according to Appendix 10 or 11.

[0118] (Appendix 13) The first vapor deposition pattern and the second vapor deposition pattern overlap and are arranged so as to be displaced in the connection direction, The extended pattern extends in a direction intersecting the connection direction. The manufacturing method according to any one of Appendices 10 to 12.

[0119] (Appendix 14) The first vapor deposition pattern and the second vapor deposition pattern overlap and are arranged so as to be displaced in the connection direction, The extended pattern extends in the connection direction. The manufacturing method described in any one of Supplementary Notes 10 to 12.

[0120] (Supplementary Note 15) The superconductor layer, the first vapor deposition pattern, the second vapor deposition pattern, and the Josephson junction are connected so as to form a superconducting quantum interference device. The manufacturing method described in any one of Supplementary Notes 10 to 14.

[0121] (Supplementary Note 16) A non-linear inductor including the superconducting quantum interference device is configured. The manufacturing method described in Supplementary Note 15.

Explanation of Reference Numerals

[0122] 1 Superconducting quantum circuit 2 Substrate 2s Substrate surface 3 Superconductor layer 4 First vapor deposition layer 5 Second vapor deposition layer 6 Josephson junction 6A First Josephson junction 6B Second Josephson junction 6C Third Josephson junction 6D Fourth Josephson junction 8 Non-linear inductor 9 Quantum computer 31 Surface pattern (main pattern) 31A Ground pattern 31B Electrode pattern 31e Edge 32 Extension pattern 32A Protrusion pattern 32B Island pattern 32e Extension end 41 First vapor deposition pattern 41A First vapor deposition pattern 41B First vapor deposition pattern 41C First vapor deposition pattern 41D First vapor deposition pattern 51 Second vapor deposition pattern 51A Second vapor deposition pattern 51B Second vapor deposition pattern 51C Second vapor deposition pattern 81 Superconducting quantum interference device 91 Quantum bit 92 Coupler 93 Junction 101 Superconducting quantum circuit 106A First Josephson junction 106B Second Josephson junction 106C Third Josephson junction 106D Fourth Josephson junction 108 Nonlinear inductor 132A Protrusion pattern 132B Island pattern 141A First vapor deposition pattern 141B First vapor deposition pattern 141C First vapor deposition pattern 141D First vapor deposition pattern 151A Second vapor deposition pattern 151B Second vapor deposition pattern 151C Second vapor deposition pattern 201 Superconducting quantum circuit 202 Substrate 203 Superconductor layer 204 First vapor deposition layer 205 Second vapor deposition layer 206 Josephson junction 231 Main pattern 232 Extension pattern 241 First vapor deposition pattern 251 Second vapor deposition pattern AA Vapor deposition pattern D1 Vapor deposition direction D2 Connection direction D3 Lamination direction DZ1 First irradiation direction DZ2 Second irradiation direction OP Opening RS Resist

Claims

1. A substrate, a superconductor layer laminated on the substrate and including a main pattern and an extended pattern, a first vapor deposition pattern having a part laminated on the superconductor layer, a second vapor deposition pattern having a part laminated on the first vapor deposition pattern, and a Josephson junction is provided at an overlapping portion between the first vapor deposition pattern and the second vapor deposition pattern, wherein the extended pattern is connected to at least one of the first vapor deposition pattern and the second vapor deposition pattern, a superconducting quantum circuit.

2. The superconducting quantum circuit according to claim 1, wherein the extended pattern protrudes from the main pattern such that the extended end is a protruding end.

3. The superconducting quantum circuit according to claim 1, wherein the extended pattern is separated from the main pattern.

4. The superconducting quantum circuit according to claim 1, wherein the first vapor deposition pattern and the second vapor deposition pattern overlap and are arranged so as to be displaced in the connecting direction, and the extended pattern extends in a direction intersecting the connecting direction.

5. The superconducting quantum circuit according to claim 1, wherein the first vapor deposition pattern and the second vapor deposition pattern overlap and are arranged so as to be displaced in the connecting direction, and the extended pattern extends in the connecting direction.

6. The superconducting quantum circuit according to claim 1, wherein the superconductor layer, the first vapor deposition pattern, the second vapor deposition pattern, and the Josephson junction are connected so as to constitute a superconducting quantum interference device.

7. The superconducting quantum circuit according to claim 6, wherein a non-linear inductor including the superconducting quantum interference device is formed.

8. A superconducting quantum circuit according to any one of claims 1 to 7, and a coupling portion capable of coupling with a coupler, a quantum bit.

9. A quantum computer comprising a plurality of quantum bits according to claim 8, and further comprising a coupler for coupling the coupling portions across the plurality of quantum bits.

10. A manufacturing method, comprising laminating a part of a first vapor deposition pattern on a superconductor layer laminated on a substrate and including a main pattern and an extended pattern, oxidizing a surface of the first vapor deposition pattern, laminating a part of a second vapor deposition pattern on the first vapor deposition pattern, forming a Josephson junction at an overlapping portion between the first vapor deposition pattern and the second vapor deposition pattern, and connecting the extended pattern to at least one of the first vapor deposition pattern and the second vapor deposition pattern.

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