Multilayer electronic component

Abstract

To provide a multilayer electronic component having improved reliability, satisfying X7R or X7S characteristics, having improved MTTF of high temperature and high pressure acceleration lifespan, and having improved capacitance.SOLUTION: A multilayer electronic component according to one example embodiment of the present invention includes: a body including a capacitance formation portion including a dielectric layer and an internal electrode; and an external electrode disposed on the body. When secondary phase crystal grains including rare earth element and titanium (Ti) are referred to as first secondary phase crystal grains and secondary phase crystal grains including the rare earth element and silicon (Si) are referred to as second secondary phase crystal grains, and when the number of the first secondary phase crystal grains included in the capacitance formation portion is referred to as A and the number of the second secondary phase crystal grains included in the capacitance formation portion is referred to as B, the capacitance formation portion may satisfy 0<A / (A+B)≤0.4.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] The present invention relates to a multilayer electronic component.

Background Art

[0002] A multilayer ceramic capacitor (MLCC), which is one type of multilayer electronic component, is a chip-shaped capacitor that is mounted on a printed circuit board of various electronic products such as video devices like liquid crystal display (LCD) devices and plasma display panel (PDP) devices, computers, smartphones, and mobile phones, and serves to charge or discharge electricity.

[0003] Such a multilayer ceramic capacitor can be used as a component of various electronic devices due to its advantages of being small in size while ensuring high capacitance and being easy to mount. As various electronic devices such as computers and mobile devices are miniaturized and have increased output power, the requirements for miniaturization and high capacitance of multilayer ceramic capacitors are increasing.

[0004] As the market for MLCCs for electrical equipment as well as for IT expands, the demand for products with a high rated voltage and excellent reliability in the same capacitance range is increasing. Generally, it is known that the smaller the grain size and the more grain boundaries there are, the higher the reliability of the dielectric. Among the additive elements of the MLCC dielectric composition, the effects of valence-fixed acceptors, transition metal elements which are valence-variable acceptors, and rare earth elements on reliability are already known, and generally, conditions with good reliability are selected by optimizing the composition ratio of these dielectric additive elements. Since more than 30 years have passed since the industrialization of BME (Base Metal Electrode) MLCCs, the composition optimization work for improving reliability has been continuously carried out, and many such cases have already been reported as patents. Recently, it has been reported that even with the same dielectric composition, there are significant differences in reliability depending on the microstructure, the distribution and solid solution degree of the additive elements, and the process conditions, and research on this is actively underway.

[0005] Conventional high-capacity multilayer electronic components are based on materials that are sintered by adding magnesium (Mg), aluminum (Al), etc., which are fixed valence acceptors, adding rare earth elements that act as donors, or adding manganese (Mn), vanadium (V), chromium (Cr), etc., which are variable valence acceptors, and at the same time further adding sintering aids such as barium (Ba) or silicon (Si). However, in order to manufacture high-capacity and high-reliability multilayer electronic components, doping with additional elements is necessary, and it can be said that it is a preferable direction to further add rare earth elements mainly for the purpose of improving reliability as in the past. Therefore, by increasing the addition content of rare earth elements, some rare earth elements can form a core-shell structure with the crystal lattice of barium titanate (BaTiO3) - based, and further improved reliability can be realized. However, some rare earth elements do not participate in the formation of the shell due to solid solution in the crystal lattice of barium titanate (BaTiO3) - based, but combine with other elements to form a secondary phase. It has been found that the formed secondary phase may or may not affect reliability, but may instead have an adverse effect, and this control is necessary.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0007] One of the various problems to be solved by the present invention is to provide a multilayer electronic component with improved reliability.

[0008] One of the various problems to be solved by the present invention is to provide a multilayer electronic component that satisfies X7R or X7S characteristics.

[0009] One of the various problems to be solved by the present invention is to provide a multilayer electronic component with an improved MTTF of high-temperature and high-pressure accelerated life.

[0010] One of the various problems to be solved by the present invention is to provide a multilayer electronic component with improved capacitance.

[0011] However, the various problems to be solved by the present invention are not limited to the above-described content and can be more easily understood in the process of explaining specific embodiments of the present invention.

Means for Solving the Problems

[0012] The multilayer electronic component according to one embodiment of the present invention includes a main body including a capacitance forming portion including a dielectric layer and internal electrodes, and external electrodes disposed on the main body. The secondary phase crystal grains containing rare earth elements and titanium (Ti) are defined as the first secondary phase crystal grains, and the secondary phase crystal grains containing rare earth elements and silicon (Si) are defined as the second secondary phase crystal grains. When the number of the first secondary phase crystal grains contained in the capacitance forming portion is A and the number of the second secondary phase crystal grains contained in the capacitance forming portion is B, the capacitance forming portion can satisfy 0 < A / (A + B) ≤ 0.4.

[0013] The multilayer electronic component according to another embodiment of the present invention includes a main body including a capacitance forming portion including a dielectric layer and internal electrodes, and external electrodes disposed on the main body. The secondary phase crystal grains containing rare earth elements and titanium (Ti) are defined as the first secondary phase crystal grains, and the secondary phase crystal grains containing rare earth elements and silicon (Si) are defined as the second secondary phase crystal grains. When the number of the first secondary phase crystal grains contained in the capacitance forming portion is A and the number of the second secondary phase crystal grains contained in the capacitance forming portion is B, the capacitance forming portion can satisfy 0 < A and 0 < B.

Effects of the Invention

[0014] One of the various effects of the present invention is to improve the reliability of the multilayer electronic component.

[0015] One of the various effects of the present invention is to satisfy the X7R or X7S characteristics of the multilayer electronic component.

[0016] One of the various effects of the present invention is to improve the MTTF of the high-temperature and high-pressure accelerated life of the multilayer electronic component.

[0017] One of the various effects of the present invention is to improve the capacitance of the multilayer electronic component.

[0018] However, the diverse and significant advantages and effects of the present invention are not limited to the above-described content and can be more easily understood in the process of describing the specific embodiments of the present invention.

Brief Description of the Drawings

[0019]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Mode for Carrying Out the Invention

[0020] Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiments of the present invention can be modified into several other forms, and the scope of the present invention is not limited to the embodiments described below. Also, the embodiments of the present invention are provided to more fully explain the present invention to ordinary technicians. Therefore, for clearer explanation, elements such as the shape and size in the drawings may be enlarged, reduced (or emphasized or simplified), and elements denoted by the same reference numerals in the drawings are the same elements.

[0021] In addition, for the purpose of clearly explaining the present invention in the drawings, parts not related to the explanation are omitted, and the sizes and thicknesses of the illustrated components are arbitrarily shown for the convenience of explanation, so the present invention is not necessarily limited by the illustration. Also, components with the same functions within the scope of the same concept are described using the same reference numerals. Furthermore, throughout the specification, when a certain part "includes" a certain component, it means that other components can be further included, rather than excluding other components, unless otherwise stated to the contrary.

[0022] In the drawings, the first direction can be defined as the stacking direction or the thickness (T) direction, the second direction as the length (L) direction, and the third direction as the width (W) direction.

[0023] Multilayer electronic component FIG. 1 schematically shows a perspective view of a stacked electronic component according to an embodiment of the present invention, FIG. 2 schematically shows a separated perspective view showing the stacked structure of internal electrodes, FIG. 3 schematically shows a cross-sectional view taken along line I-I' of FIG. 1, FIG. 4 schematically shows a cross-sectional view taken along line II-II' of FIG. 1, and FIG. 5 schematically shows an enlarged view of the P region of FIG. 3.

[0024] Hereinafter, with reference to FIGS. 1 to 5, a multilayer electronic component according to an embodiment of the present invention will be described in detail. However, although a multilayer ceramic capacitor will be described as an example of the multilayer electronic component, the present invention can also be applied to various electronic products using a dielectric composition, such as an inductor, a piezoelectric element, a varistor, or a thermistor.

[0025] A multilayer electronic component 100 according to an embodiment of the present invention includes a main body 110 including a capacitance forming portion Ac including a dielectric layer 111 and internal electrodes 121 and 122, and external electrodes 131 and 132 disposed on the main body 110. Secondary phase crystal grains containing a rare earth element and titanium (Ti) are defined as first secondary phase crystal grains 10, and secondary phase crystal grains containing the rare earth element and silicon (Si) are defined as second secondary phase crystal grains 20. When the number of the first secondary phase crystal grains 10 contained in the capacitance forming portion Ac is A and the number of the second secondary phase crystal grains 20 contained in the capacitance forming portion Ac is B, the capacitance forming portion Ac can satisfy 0 < A / (A + B) ≦ 0.4.

[0026] A multilayer electronic component 100 according to another embodiment of the present invention includes a main body 110 including a capacitance forming portion Ac including a dielectric layer 111 and internal electrodes 121 and 122, and external electrodes 131 and 132 disposed on the main body 110. Secondary phase crystal grains containing a rare earth element and titanium (Ti) are defined as first secondary phase crystal grains 10, and secondary phase crystal grains containing the rare earth element and silicon (Si) are defined as second secondary phase crystal grains 20. When the number of the first secondary phase crystal grains 10 contained in the capacitance forming portion Ac is A and the number of the second secondary phase crystal grains 20 contained in the capacitance forming portion Ac is B, the capacitance forming portion Ac can satisfy 0 < A and 0 < B.

[0027] The main body 110 can have the dielectric layer 111 and the internal electrodes 121 and 122 alternately laminated.

[0028] More specifically, the main body 110 can include a capacitance forming portion Ac that is disposed inside the main body 110 and includes first internal electrodes 121 and second internal electrodes 122 that are alternately disposed so as to face each other with the dielectric layer 111 interposed therebetween to form a capacitance.

[0029] There is no particular limitation on the specific shape of the main body 110. However, as shown in the figure, the main body 110 can be formed in a hexahedron shape or a shape similar thereto. Due to the shrinkage of the ceramic particles contained in the main body 110 during the firing process, the main body 110 is not a hexahedron with a perfect straight line, but can have a substantially hexahedron shape.

[0030] The main body 110 can have a first surface 1 and a second surface 2 facing each other in a first direction, a third surface 3 and a fourth surface 4 facing each other in a second direction and connected to the first and second surfaces 1 and 2, and a fifth surface 5 and a sixth surface 6 facing each other in a third direction and connected to the first to fourth surfaces 1, 2, 3, and 4.

[0031] The plurality of dielectric layers 111 forming the main body 110 are in a fired state, and the boundaries between adjacent dielectric layers 111 can be integrated so that they are difficult to confirm without using a scanning electron microscope (SEM).

[0032] The raw material for forming the dielectric layer 111 is not limited as long as sufficient capacitance can be obtained. Generally, perovskite (ABO3)-based materials can be used. For example, barium titanate-based materials, lead composite perovskite-based materials, or strontium titanate-based materials can be used. The barium titanate-based material can contain barium titanate (BaTiO3)-based ceramic particles as the main component. Examples of barium titanate (BaTiO3)-based ceramic particles include BaTiO3, (Ba 1-x Ca x )TiO3 (0 < x < 1), Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1) or Ba(Ti 1-y Zr y)Examples include O3 (0 < y < 1).

[0033] In addition, various sub-component additives, organic solvents, binders, dispersants, etc. can be added to the raw materials for forming the dielectric layer 111 according to the purpose of the present invention to particles such as barium titanate (BaTiO3).

[0034] In addition, since the dielectric layer 111 can be formed using a dielectric material such as barium titanate (BaTiO3), it can contain a dielectric microstructure after firing. The dielectric microstructure can include a plurality of dielectric crystallites 30, dielectric grain boundaries disposed between the adjacent dielectric crystallites 30, and triple points disposed at points where three or more of the dielectric grain boundaries meet, and each can include a plurality of them. The dielectric crystallites 30 can include dielectric crystallites having a core-shell structure and dielectric crystallites not having a core-shell structure, and more specific details will be described later.

[0035] Conventional high-capacity multilayer electronic components are based on materials that are sintered by adding magnesium (Mg), aluminum (Al), etc., which are fixed valence acceptors, adding rare earth elements that serve as donors, or adding manganese (Mn), vanadium (V), chromium (Cr), etc., which are variable valence acceptors, and further adding sintering aids such as barium (Ba) or silicon (Si). However, in order to manufacture high-capacity and high-reliability multilayer electronic components, doping with additional elements is necessary, and it can be said that further adding rare earth elements, which have the main purpose of improving reliability as in the past, is a preferable direction. Therefore, by increasing the addition content of rare earth elements, some rare earth elements dissolve in the crystal lattice of the barium titanate (BaTiO3) system to form a core-shell structure, and a multilayer electronic component with further improved reliability can be realized. However, some rare earth elements do not participate in the formation of the shell due to the solid solution of the crystal lattice of the barium titanate (BaTiO3) system, but combine with other elements to form a secondary phase. It has been found that the formed secondary phase may not affect reliability or may even have an adverse effect, and control of the secondary phase may be required.

[0036] Therefore, the present invention provides a dielectric composition doped with a donor element capable of achieving high reliability. In the dielectric composition, in addition to the core-shell structure, the ratio of the number (A) of the first secondary-phase crystal grains 10 formed by the combination of the rare earth element and titanium (Ti) and the number (B) of the second secondary-phase crystal grains 20 formed by the combination of the rare earth element and silicon (Si) of the excessively added rare earth element is adjusted to achieve high reliability.

[0037] Among the degradation mechanisms of multilayer electronic components, the movement of oxygen vacancies by an electric field, which is the most well-known, may accelerate the semiconductorization of the dielectric layer. However, since the first dielectric crystallites 10 may be used as a migration path for oxygen vacancies, it may cause rapid degradation. Therefore, it is preferable to minimize the generation of the first dielectric crystallites 10. The second secondary-phase crystallites 20 can play a role in suppressing the movement of oxygen vacancies. Therefore, when formed in an appropriate number, they may not have an adverse effect on the dielectric properties and reliability. Accordingly, adjusting the ratio of the number (A) of the first dielectric crystallites 10 to the number (B) of the second dielectric crystallites 20 through control of the content of the added components corresponds to one of various mechanisms capable of achieving high reliability of the multilayer electronic component, and can effectively prevent side effects caused by the addition of an excessive amount of rare earth elements.

[0038] In one embodiment of the present invention, secondary-phase crystallites containing a rare earth element and titanium (Ti) are defined as first secondary-phase crystallites 10, and secondary-phase crystallites containing a rare earth element and silicon (Si) are defined as second secondary-phase crystallites 20. When the number of the first secondary-phase crystallites 10 contained in the capacitance forming portion Ac is A and the number of the second secondary-phase crystallites 20 contained in the capacitance forming portion Ac is B, the capacitance forming portion Ac can satisfy 0 < A / (A + B) ≤ 0.4.

[0039] At this time, the capacitance forming portion Ac can include a cross-sectional area of 1.85 μm × 1.85 μm that satisfies the condition of 0 < A / (A + B) ≤ 0.4, and a cross-sectional area of 1.85 μm × 1.85 μm that satisfies 0 < A < B can have A and B satisfying 5 ≤ A + B < 20. That is, a cross-sectional area of 1.85 μm × 1.85 μm in the capacitance forming portion Ac can satisfy 0 < A and 0 < B, satisfy 0 < A < B, and satisfy 5 ≤ A + B < 20.

[0040] In the present invention, the "secondary-phase or secondary-phase crystal grains" can mean particles, segregation, or crystal grains having a composition or crystal lattice different from that of perovskite-based (ABO3) dielectric particles, and can mean an aggregate of components not dissolved in the dielectric crystal grains, but is not particularly limited thereto. For example, the first secondary-phase crystal grains 10 and the second secondary-phase crystal grains 20 can mean an aggregate of elements not dissolved or substituted in the crystal lattice structure of the dielectric crystal grains 30.

[0041] Such secondary-phase crystal grains 10 and 20 can be included in the dielectric layer 111 in the capacitance forming portion Ac, or can also be detected at the interface with the internal electrodes 121 and 122, but is not particularly limited thereto, and can be included in any region within the capacitance forming portion Ac.

[0042] In the present invention, as an example of a more specific method for measuring the content of each component of the multilayer electronic component 100, for example, the elements contained in the dielectric layer 111, in the case of the destructive method, the Energy Dispersive X-ray Spectroscopy (EDS) mode of a scanning electron microscope (SEM), the EDS mode of a transmission electron microscope (TEM), or the EDS mode of a scanning transmission electron microscope (STEM) can be used to analyze the components. First, a thin-sectioned analysis sample is prepared using a Focused Ion Beam (FIB) equipment in the region to be measured. Then, the damaged layer on the surface of the thin-sectioned sample is removed using xenon (Xe) or argon (Ar) ion milling. After that, each component to be measured is mapped in the image obtained using SEM-EDS, TEM-EDS, or STEM-EDS to proceed with qualitative / quantitative analysis. When measuring each component, point measurement, line measurement such as line-profile, or area measurement for observing the components within a certain region is possible. In this case, the qualitative / quantitative analysis graph of each component can also be expressed by converting it into the mass percentage (wt%), atomic percentage (at%), or molar percentage (mol%) of each element. At this time, it can be expressed by converting it into the number of moles of another specific component with respect to the number of moles of a specific component.

[0043] As another method, the multilayer electronic component is pulverized to select the region to be measured, and the components of the selected region can be analyzed using devices such as an inductively coupled plasma optical emission spectrometer (ICP-OES) and an inductively coupled plasma mass spectrometer (ICP-MS).

[0044] The first secondary-phase crystal grains 10 and the second secondary-phase crystal grains 20 can be included in the capacitance forming portion Ac, and more specifically, can be included in the dielectric layer 111 of the capacitance forming portion Ac. When the number of the first secondary-phase crystal grains 10 included in the capacitance forming portion Ac is A and the number of the second secondary-phase crystal grains 20 included in the capacitance forming portion Ac is B, the capacitance forming portion Ac can satisfy 0 < A / (A + B) ≤ 0.4.

[0045] That is, the ratio (A / (A + B)) of the number A of the first secondary-phase crystal grains 10 included in the capacitance forming portion Ac to the total (A + B) of the number A of the first secondary-phase crystal grains 10 and the number B of the second secondary-phase crystal grains 20 included in the capacitance forming portion Ac can satisfy more than 0 and less than or equal to 0.4.

[0046] The method for counting the number A of the first secondary-phase crystal grains 10 and the number B of the second secondary-phase crystal grains 20 included in the capacitance forming portion Ac is, for example, as follows, but is not particularly limited thereto.

[0047] First, after cutting a cross-section in the first and second directions at the center of the main body 110 in the third direction, for any cross-sectional area, map rare earth elements, titanium (Ti), and silicon (Si) in the EDS mode of a scanning electron microscope (SEM), a transmission electron microscope (TEM), or a scanning transmission electron microscope (STEM). Then, the region where the high-concentration rare earth elements and high-concentration titanium (Ti) overlap is defined as the first secondary-phase crystal grains 10, and the region where the high-concentration rare earth elements and high-concentration silicon (Si) overlap can be primarily analyzed as the second secondary-phase crystal grains 20. More specifically, referring to FIGS. 6(a) to 6(c), FIG. 6(a) is an image obtained by mapping dysprosium (Dy) in the EDS mode of a scanning transmission electron microscope (STEM) for a 3.0 μm × 3.0 μm cross-sectional area of the dielectric layer of an embodiment of the present invention. FIG. 6(b) is an image obtained by mapping titanium (Ti) in the EDS mode of a scanning transmission electron microscope (STEM) for the same cross-section as FIG. 6(a). FIG. 6(c) is an image obtained by mapping silicon (Si) in the EDS mode of a scanning transmission electron microscope (STEM) for the same cross-section as FIG. 6(a). The high-concentration rare earth elements indicated by the dotted circles (see FIG. 6(a)) correspond to the first secondary-phase crystal grains 10, and the high-concentration rare earth elements indicated by the arrows (see FIG. 6(a)) and the high-concentration silicon (Si) indicated by the arrows (see FIG. 6(c)) correspond to the second secondary-phase crystal grains 20. The number A of the first secondary-phase crystal grains 10 contained in the 3.0 μm × 3.0 μm cross-sectional area is observed to be 1, and the number B of the second secondary-phase crystal grains 20 is observed to be 6. Since A / (A + B) corresponds to 0.14 and satisfies the numerical range of the present invention, it can be predicted that the reliability degradation occurs relatively slowly. At this time, one first secondary-phase crystal grain 10 and six second secondary-phase crystal grains 20 are contained within a 1.85 μm × 1.85 μm cross-sectional area, and it can be confirmed that A / (A + B) also corresponds to 0.14 within the 1.85 μm × 1.85 μm cross-sectional area and satisfies the numerical range of the present invention.

[0048] As another method for observing the first secondary-phase crystal grains 10 and the second secondary-phase crystal grains 20, first, after cutting cross-sections in the first and second directions at the center of the body 110 in the third direction, for an arbitrary cross-sectional area in the central portion, when photographed in the high-angle annular dark field (HAADF) mode of a scanning electron microscope (SEM), a transmission electron microscope (TEM), or a scanning transmission electron microscope (STEM), the regions (or crystal grains) observed with white contrast can be primarily interpreted as corresponding to the secondary-phase crystal grains. At this time, in the case of the first secondary-phase crystal grains 10, since they can correspond to a pyrochlore phase having a cubic crystal system, they have a shape close to a polygon, and pores can be observed between adjacent barium titanate (BaTiO3)-based dielectric crystal grains. On the other hand, in the case of the second secondary-phase crystal grains 20, since they can have a triclinic crystal system, they have a crystal grain morphology close to amorphous, and can be observed in a form with almost no pores between adjacent barium titanate (BaTiO3)-based dielectric crystal grains.

[0049] Furthermore, the first secondary-phase crystal grains 10 can contain RE-Ti-O (RTO, where RE is a rare-earth element) in which a rare-earth element and titanium oxide (Ti-O x ) are combined, and the second secondary-phase crystal grains 20 can contain RE-Si-O (RSO, where RE is a rare-earth element) in which a rare-earth element and silicon oxide (Si-O x ) are combined, but are not particularly limited thereto.

[0050] More specifically, referring to FIGS. 7(a) and 7(b), FIG. 7(a) is an image of the first secondary-phase crystal grains 10 contained in the dielectric layer 111 of an embodiment of the present invention taken in the HAADF mode of a scanning transmission electron microscope (STEM), and FIG. 7(b) is an image of the second secondary-phase crystal grains 20 contained in the dielectric layer 111 of an embodiment of the present invention taken in the HAADF mode of a scanning transmission electron microscope (STEM). In the case of the first secondary-phase crystal grains 10 in FIG. 7(a), they have a substantially polygonal form, and pores are observed between adjacent barium titanate (BaTiO3) dielectric crystal grains. In contrast, in the case of the second secondary-phase crystal grains 20 in FIG. 7(b), they have a form close to amorphous, and it can be confirmed that no pores are observed between adjacent barium titanate (BaTiO3) dielectric crystal grains.

[0051] After primarily analyzing the presence or absence of the first secondary-phase crystal grains 10 and the second secondary-phase crystal grains 20 by the method described above, a secondary determination can be made by more detailed component analysis. The more detailed component analysis can confirm the types and contents of the elements contained in the measurement region by the EDS analysis described above. The specific determination criteria for the first secondary-phase crystal grains 10 and the second secondary-phase crystal grains 20 are as follows.

[0052] First, for the first secondary-phase crystal grains 10, the ratio of the average atomic percentage of the rare earth element to the average atomic percentage of titanium (Ti) contained in the first secondary-phase crystal grains 10 can be 0.4 or more and 1.5 or less. That is, the ratio (RE at% / Ti at%) of the average atomic percentage of the rare earth element (RE at%, where RE is the rare earth element) to the average atomic percentage of titanium (Ti at%) contained in the first secondary-phase crystal grains 10 can be 0.4 or more and 1.5 or less. At this time, the average atomic percentage of the rare earth element contained in the first secondary-phase crystal grains 10 can be 10 at% or more and 25 at% or less, and the average atomic percentage of titanium (Ti) contained in the first secondary-phase crystal grains 10 can exceed 15 at% and be 20 at% or less.

[0053] On the one hand, the first secondary-phase crystal grains 10 can further contain barium (Ba), and the average atomic percentage of barium (Ba) contained in the first secondary-phase crystal grains 10 can be 0.01 at% or more and 6 at% or less.

[0054] In addition, the first secondary-phase crystal grains 10 can further contain silicon (Si), and the average atomic percentage of silicon (Si) contained in the first secondary-phase crystal grains 10 can be 0.05 at% or more and 1.0 at% or less.

[0055] Next, for the second secondary-phase crystal grains 20, the ratio of the average atomic percentage of rare earth elements to the average atomic percentage of silicon (Si) contained in the second secondary-phase crystal grains 20 can be 0.5 or more and 2.0 or less. That is, the ratio (RE at% / Si at%) of the average atomic percentage of rare earth elements (RE at%, where RE is a rare earth element) to the average atomic percentage of silicon (Si at%) contained in the second secondary-phase crystal grains 20 can be 0.5 or more and 2.0 or less. At this time, the average atomic percentage of rare earth elements contained in the second secondary-phase crystal grains 20 can be 20 at% or more and 25 at% or less, and the average atomic percentage of silicon (Si) contained in the second secondary-phase crystal grains 20 can be 10 at% or more and 15 at% or less.

[0056] On the one hand, the second secondary-phase crystal grains 20 can further contain barium (Ba), and the average atomic percentage of barium (Ba) contained in the second secondary-phase crystal grains 20 can be 1 at% or more and 5 at% or less.

[0057] In addition, the second secondary-phase crystal grains 20 can further contain titanium (Ti), and the average atomic percentage of titanium (Ti) contained in the second secondary-phase crystal grains 20 can be 0.1 at% or more and 1.0 at% or less.

[0058] Taking the measurements specifically with reference to FIGS. 7(a) and 7(b), which are one embodiment of the present invention, as described above, the white contrast in FIG. 7(a) corresponds to the first secondary phase crystal grains 10, and the white contrast in FIG. 7(b) corresponds to the second secondary phase crystal grains 20. When point measurements were carried out at the point corresponding to Spectrum 17 in the STEM-EDS mode with respect to the first secondary phase crystal grains 10 in FIG. 7(a), dysprosium (Dy), which is a rare earth element, was measured at 10.8 at%, titanium (Ti) at 16.5 at%, barium (Ba) at 5.5 at%, and trace silicon (Si) at 1.0 at% or less. The ratio of the atomic percentage of dysprosium (Dy), which is a rare earth element, to the atomic percentage of titanium (Ti) was calculated to be 0.65. When point measurements were carried out at the point corresponding to Spectrum 4 in the STEM-EDS mode with respect to the second secondary phase crystal grains 20 in FIG. 7(b), dysprosium (Dy), which is a rare earth element, was measured at 20.0 at%, silicon (Si) at 11.5 at%, barium (Ba) at 5.2 at%, and trace titanium (Ti) at 0.8 at%. The ratio of the atomic percentage of dysprosium (Dy), which is a rare earth element, to the atomic percentage of silicon (Si) was calculated to be 1.74.

[0059] Regarding another embodiment of the present invention, taking FIGS. 8(a), 8(b), 9(a) and 9(b) as examples, FIG. 8(a) is an image taken by a scanning transmission electron microscope (STEM) of the first secondary phase crystal grains 10 contained in the dielectric layer of another embodiment of the present invention. FIG. 8(b) is a graph showing the atomic percentages of each element contained in the line-profile after performing a line-profile (LP1-LP1') so as to penetrate the first secondary phase crystal grains 10 of FIG. 8(a). In FIG. 8(a), the region represented by white contrast corresponds to the first secondary phase crystal grains 10, and the region represented by black contrast other than that corresponds to the barium titanate (BaTiO3) dielectric crystal grains 30. On the line-profile (LP1-LP1'), in the first secondary phase crystal grains 10, the atomic percentage of dysprosium (Dy) was measured to be 20 at% or more and 25 at% or less, the atomic percentage of titanium (Ti) was more than 15 at% and 20 at% or less, the atomic percentage of barium (Ba) was 0.01 at% or more and 5.5 at% or less, and the atomic percentage of silicon (Si) was 0.1 at% or more and 0.4 at% or less. On the other hand, on the line-profile (LP1-LP1'), in the dielectric crystal grains 30, the atomic percentage of dysprosium (Dy) was measured to be 0.5 at% or more and 2.0 at% or less, the atomic percentage of titanium (Ti) was 10 at% or more and 15 at% or less, the atomic percentage of barium (Ba) was more than 20 at%, and the atomic percentage of silicon (Si) was 0.1 at% or more and 0.4 at% or less.

[0060] Figure 9(a) is an image taken by a scanning transmission electron microscope (STEM) of the second secondary phase crystallites 20 included in the dielectric layer of another embodiment of the present invention. Figure 9(b) shows, in a graph, the atomic percentages of the respective elements included in the line-profile after performing a line-profile (LP2-LP2') so as to penetrate the second secondary phase crystallites 20 of Figure 9(a). In Figure 9(a), the region represented by white contrast corresponds to the second secondary phase crystallites 20, and the other region represented by black contrast corresponds to barium titanate (BaTiO3) dielectric crystallites 30. On the line-profile (LP2-LP2'), it was measured that in the second secondary phase crystallites 20, the atomic percentage of dysprosium (Dy) is 20 at% or more and 25 at% or less, the atomic percentage of silicon (Si) is 10 at% or more and 15 at% or less, the atomic percentage of barium (Ba) is 1.5 at% or more and 5.0 at% or less, and the atomic percentage of titanium (Ti) is 0.5 at% or more and 1.0 at% or less. On the other hand, on the line-profile (LP2-LP2'), it was measured that in the dielectric crystallites 30, the atomic percentage of dysprosium (Dy) is 0.5 at% or more and 2.0 at% or less, the atomic percentage of silicon (Si) is 0.1 at% or more and 0.4 at% or less, the atomic percentage of barium (Ba) is 20 at% or more and 25 at% or less, and the atomic percentage of titanium (Ti) is 10 at% or more and 20 at% or less.

[0061] On the other hand, when counting the number A of the first secondary phase crystallites 10 and the number B of the second secondary phase crystallites 20 included in the capacitance forming section Ac, the sizes of the first secondary phase crystallites 10 and the second secondary phase crystallites 20 as the reference are not particularly limited, but the size of the first secondary phase crystallites 10 can be 50 nm or more and 1 μm or less, and the size of the second secondary phase crystallites 20 can be 100 nm or more and 1 μm or less. Here, the sizes of the first secondary phase crystallites 10 and the second secondary phase crystallites 20 can correspond to the values obtained by averaging the major axis and the minor axis passing through the center of each secondary phase crystallite, but are not particularly limited thereto.

[0062] In one embodiment of the present invention, when the capacitance forming part Ac satisfies 0 < A / (A + B) ≤ 0.4, it can satisfy the characteristics of a relative permittivity of 1500 or more, the characteristics of a dissipation factor (DF) of 1.5% or more, the characteristics of a breakdown voltage (BDV) of 350 V or more, the characteristics of a mean time to failure (MTTF) of 200 hours or more under the accelerated test conditions (Highly Accelerated Life Test, HALT) of applying an electric field of 42 V / μm at a temperature of 150°C, the characteristics of an insulation resistance (IR, high-temperature insulation resistance) of 3.0E+5 Ω or more at a temperature of 150°C, and the X7R characteristics which are the change rate of capacitance (Temperature Coefficient of Capacitance, TCC) according to the target temperature (the capacitance in the temperature range of -55°C or more and 125°C or less satisfies -15% or more and 15% or less based on the capacitance at 25°C).

[0063] When A / (A + B) = 0 in the capacitance forming part Ac, there is a possibility that the high-temperature insulation resistance (IR) characteristics, the breakdown voltage (BDV) characteristics, or the high-temperature reliability characteristics may deteriorate. When 0.4 < A / (A + B) in the capacitance forming part (Ac), there is a possibility that the relative permittivity characteristics, the dissipation factor (DF) characteristics, the high-temperature insulation resistance (IR) characteristics, the breakdown voltage (BDV) characteristics, or the high-temperature reliability characteristics may deteriorate.

[0064] On the other hand, when the rare earth element contained in the first secondary phase crystal grain 10 is the first rare earth element and the rare earth element contained in the second secondary phase crystal grain 20 is the second rare earth element, the first and second rare earth elements can be the same as each other, but are not particularly limited thereto. The first and second rare earth elements can be different from each other. When the first and second rare earth elements each contain a plurality of rare earth elements, they can all be the same, or only some of them can be the same, or they can all be different.

[0065] At this time, the first and second rare earth elements can preferably be at least one of lanthanum (La), samarium (Sm), dysprosium (Dy), terbium (Tb), holmium (Ho), erbium (Er), and gadolinium (Gd), but can exclude at least one of ytterbium (Yb) and yttrium (Y).

[0066] On the other hand, the dielectric layer 111 can include dielectric crystallites having a core-shell structure containing rare earth elements. At this time, the average atomic percentage of the rare earth elements in the core is more than 0 at% and less than 0.5 at%, and the average atomic percentage of the rare earth elements in the shell can be 0.5 at% or more and less than 2.0 at%.

[0067] By satisfying that the average atomic percentage of the rare earth elements in the core is more than 0 at% and less than 0.5 at% and the average atomic percentage of the rare earth elements in the shell is 0.5 at% or more and less than 2.0 at%, the highly reliable multilayer electronic component 100 can be realized.

[0068] On the other hand, in another embodiment of the present invention, when the number of the first secondary phase crystallites 10 included in the capacitance forming portion Ac is A and the number of the second secondary phase crystallites 20 included in the capacitance forming portion Ac is B, the capacitance forming portion Ac can satisfy 0 < A and 0 < B, and preferably the capacitance forming portion Ac can satisfy 0 < A < B.

[0069] At this time, the capacitance forming portion Ac can include one cross-sectional area of 1.85 μm × 1.85 μm that satisfies the condition of 0 < A < B, and one cross-sectional area of 1.85 μm × 1.85 μm that satisfies the condition of 0 < A < B can satisfy 5 ≤ A + B < 20. That is, one cross-sectional area of 1.85 μm × 1.85 μm in the capacitance forming portion Ac can satisfy 0 < A and 0 < B, satisfy 0 < A < B, and satisfy 5 ≤ A + B < 20.

[0070] By the capacitance forming section Ac satisfying 0 < A and 0 < B, it can satisfy at least one of the following characteristics: a relative permittivity of 1500 or more, a dielectric loss factor DF of 1.5% or more, a breakdown voltage (BDV) of 350 V or more, an average failure time (MTTF) of 200 hours or more under an accelerated test condition (HALT) where an electric field of 42 V / μm is applied at a temperature of 150°C, an insulation resistance (IR, high-temperature insulation resistance) of 3.0E+5 Ω or more at a temperature of 150°C, and an X7R characteristic which is a capacitance change rate (TCC) corresponding to a target temperature.

[0071] This can provide the highly reliable multilayer electronic component 100 by adding rare earth elements. However, by generating the second secondary phase crystal grains 20 to prevent the unexpected side effects caused by the generation of the first secondary phase crystal grains 10 due to the addition of excessive rare earth elements, the side effects caused by the generation of the first secondary phase crystal grains 10 can be prevented in advance.

[0072] On the other hand, in the dielectric layer 111, in addition to the main component of barium titanate (BaTiO3), the first to fifth sub-components can be further added and can be detected by the first to fifth sub-component elements.

[0073] In the present invention, the "main component" can mean a component that occupies a relatively large weight ratio or atomic ratio compared to other components, and can mean a component of 50 wt% or more based on the weight of the entire composition or the entire dielectric layer, or a component of 50 at% or more based on the number of atoms.

[0074] And in the present invention, the "sub-component" can mean a component that occupies a relatively small weight ratio or atomic ratio compared to other components, and can mean a component of less than 50 wt% based on the weight of the entire composition or the entire dielectric layer, or a component of less than 50 at% based on the number of atoms.

[0075] Hereinafter, the first to fifth sub-components will be described more specifically.

[0076] a) The first sub-component According to one embodiment of the present invention, the dielectric layer 111 can further contain a first sub-component element, and the first sub-component element can be a variable-valence acceptor element. The variable-valence acceptor element can be at least one of manganese (Mn), vanadium (V), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), and zinc (Zn), preferably at least one of manganese (Mn) and vanadium (V), and more preferably manganese (Mn) and vanadium (V).

[0077] On the other hand, the number of moles of the first sub-component element with respect to 100 moles of the B-site element in the perovskite (ABO3) - based main component contained in the dielectric layer 111 can be 0.3 mole or more and 0.5 mole or less. More specifically, for example, when the main component is barium titanate (BaTiO3), the number of moles of the first sub-component element with respect to 100 moles of titanium (Ti) contained in the dielectric layer 111 can be 0.3 mole or more and 0.5 mole or less.

[0078] The first sub-component can be added to the dielectric layer 111 in at least one form of an oxide or a carbonate of the first sub-component element. As described above, the first sub-component element can mean a variable-valence acceptor element. When a plurality of first sub-component elements are added, the total number of moles of the plurality of first sub-component elements combined can be defined as the number of moles of the first sub-component element.

[0079] When the number of moles of the first sub-component element with respect to 100 moles of titanium (Ti) contained in the dielectric layer 111 is 0.3 mole or more and 0.5 mole or less, the firing temperature of the dielectric layer 111 can be lowered, and the dielectric properties and the high-temperature accelerated life characteristics can be improved.

[0080] When the number of moles of the first sub-component element with respect to 100 moles of titanium (Ti) contained in the dielectric layer 111 is less than 0.3 moles, there is a risk that the high-temperature insulation resistance characteristics deteriorate or that the X7R characteristics cannot be satisfied. When the number of moles of the first sub-component element with respect to 100 moles of titanium (Ti) exceeds 0.5 moles, there is a risk that the room-temperature dielectric constant deteriorates.

[0081] b) Second sub-component According to one embodiment of the present invention, the dielectric layer 111 can further contain a second sub-component element, and the second sub-component element can be magnesium (Mg).

[0082] On the other hand, the number of moles of the second sub-component element with respect to 100 moles of the B-site element among the perovskite (ABO3) - based main components contained in the dielectric layer 111 can be 0.3 moles or more and 0.5 moles or less. More specifically, for example, when the main component is barium titanate (BaTiO3), the number of moles of the second sub-component element with respect to 100 moles of titanium (Ti) contained in the dielectric layer 111 can be 0.3 moles or more and 0.5 moles or less.

[0083] The second sub-component can be added to the dielectric layer 111 in at least one of the forms of an oxide or a carbonate of the second sub-component element, and as described above, the second sub-component element can mean magnesium (Mg).

[0084] When the number of moles of the second sub-component element with respect to 100 moles of titanium (Ti) contained in the dielectric layer 111 is 0.3 moles or more and 0.5 moles or less, it has excellent high-temperature insulation resistance characteristics and can satisfy the X7R characteristics.

[0085] When the number of moles of the second sub-component element with respect to 100 moles of titanium (Ti) contained in the dielectric layer 111 is less than 0.3 moles, there is a risk that the high-temperature insulation resistance characteristics deteriorate, that the X7R characteristics cannot be satisfied, or that the breakdown voltage (BDV) characteristics deteriorate. When the number of moles of the second sub-component element with respect to 100 moles of titanium (Ti) exceeds 0.5 moles, there is a risk that the X7R characteristics cannot be satisfied.

[0086] c) Third sub-component According to an embodiment of the present invention, the dielectric layer 111 can further contain a third sub-component element, and the third sub-component element can be a rare earth element. The rare earth element can preferably be at least one of lanthanum (La), samarium (Sm), dysprosium (Dy), terbium (Tb), holmium (Ho), erbium (Er), and gadolinium (Gd), but can exclude at least one of ytterbium (Yb) and yttrium (Y).

[0087] On the other hand, the number of moles of the third sub-component element with respect to 100 moles of the B-site element in the perovskite (ABO3) - based main component contained in the dielectric layer 111 can be 3.5 moles or more and 5.5 moles or less. More specifically, for example, when the main component is barium titanate (BaTiO3), the number of moles of the third sub-component element with respect to 100 moles of titanium (Ti) contained in the dielectric layer 111 can be 3.5 moles or more and 5.5 moles or less.

[0088] The third sub-component can be added to the dielectric layer 111 in at least one form of an oxide or carbonate of the third sub-component element. As described above, the third sub-component element can mean a rare earth element. When a plurality of third sub-component elements are added, the total number of moles of the plurality of third sub-component elements combined can be defined as the number of moles of the third sub-component element.

[0089] When the number of moles of the third sub-component element with respect to 100 moles of titanium (Ti) contained in the dielectric layer 111 is 3.5 moles or more and 5.5 moles or less, it has excellent high-temperature insulation resistance characteristics, can satisfy the X7R characteristics, the breakdown voltage (BDV) characteristics are improved, and it can have excellent high-temperature reliability.

[0090] When the number of moles of the third sub-component element with respect to 100 moles of titanium (Ti) contained in the dielectric layer 111 is less than 3.5 moles, there is a risk of deterioration in high-temperature insulation resistance characteristics, breakdown voltage (BDV) characteristics, or high-temperature reliability. When the number of moles of the third sub-component element with respect to 100 moles of titanium (Ti) exceeds 5.5 moles, there is a risk of deterioration in room-temperature dielectric constant, loss factor (DF), high-temperature insulation resistance characteristics, or high-temperature reliability.

[0091] d) Fourth sub-component According to an embodiment of the present invention, the dielectric layer 111 can further contain a fourth sub-component element, and the fourth sub-component element can be at least one of barium (Ba) and calcium (Ca), and preferably can be barium (Ba).

[0092] On the other hand, the number of moles of the fourth sub-component element with respect to 100 moles of the B-site element among the perovskite (ABO3) - based main components contained in the dielectric layer 111 can be 1 mole or more and 1.5 moles or less. More specifically, for example, when the main component is barium titanate (BaTiO3), the number of moles of the fourth sub-component element with respect to 100 moles of titanium (Ti) contained in the dielectric layer 111 can be 1 mole or more and 1.5 moles or less. Here, when the fourth sub-component element is the same as the A-site element of the main component, it can be calculated excluding the number of moles of the A-site element of the main component. For example, when the fourth sub-component element is barium (Ba) and the main component is barium titanate (BaTiO3), the number of moles of barium (Ba) with respect to 100 moles of titanium (Ti) contained in the dielectric layer 111 can be 101 moles or more and 101.5 moles or less. Excluding 100 moles of barium (Ba) due to the main component, the number of moles of barium (Ba) due to the fourth sub-component element can be calculated to be 1 mole or more and 1.5 moles or less.

[0093] The fourth sub-component can be added to the dielectric layer 111 in at least one form of an oxide or a carbonate of the fourth sub-component element. As described above, the fourth sub-component element can mean at least one of barium (Ba) and calcium (Ca). When a plurality of fourth sub-component elements are added, the total number of moles of the plurality of fourth sub-component elements combined can be defined as the number of moles of the fourth sub-component element.

[0094] When the number of moles of the fourth sub-component element with respect to 100 moles of titanium (Ti) contained in the dielectric layer 111 is 1 mole or more and 1.5 moles or less, it has excellent high-temperature insulation resistance characteristics, can satisfy the X7R characteristics, and the breakdown voltage (BDV) characteristics and high-temperature reliability can be improved.

[0095] When the number of moles of the fourth sub-component element with respect to 100 moles of titanium (Ti) contained in the dielectric layer 111 is less than 1 mole, the high-temperature insulation resistance characteristics or high-temperature reliability may decrease. When the number of moles of the fourth sub-component element with respect to 100 moles of titanium (Ti) exceeds 1.5 moles, the high-temperature insulation resistance characteristics, breakdown voltage (BDV) characteristics, or high-temperature reliability may decrease.

[0096] e) The fifth sub-component According to an embodiment of the present invention, the dielectric layer 111 can further include a fifth sub-component element, and the fifth sub-component element can be silicon (Si).

[0097] On the other hand, the number of moles of the fifth sub-component element with respect to 100 moles of the B-site element among the perovskite (ABO3) - based main components contained in the dielectric layer 111 can be 1.1 moles or more and 3 moles or less. More specifically, for example, when the main component is barium titanate (BaTiO3), the number of moles of the fifth sub-component element with respect to 100 moles of titanium (Ti) contained in the dielectric layer 111 can be 1.1 moles or more and 3 moles or less.

[0098] The fifth sub-component can be added to the dielectric layer 111 in at least one form of an oxide of the fifth sub-component element or a glass containing the fifth sub-component element. As described above, the fifth sub-component element can mean silicon (Si).

[0099] When the molar number of the fifth sub-component element with respect to 100 moles of titanium (Ti) contained in the dielectric layer 111 is 1.1 moles or more and 3 moles or less, it has excellent high-temperature insulation resistance characteristics and can satisfy the X7R characteristics.

[0100] When the molar number of the fifth sub-component element with respect to 100 moles of titanium (Ti) contained in the dielectric layer 111 is less than 1.1 moles, the high-temperature insulation resistance characteristics or high-temperature reliability may decrease. When the molar number of the fifth sub-component element with respect to 100 moles of titanium (Ti) exceeds 3 moles, the room-temperature dielectric constant or high-temperature reliability characteristics may decrease.

[0101] On the other hand, the thickness td of the dielectric layer 111 does not need to be particularly limited.

[0102] In order to ensure the reliability of the multilayer electronic component 100 under a high-voltage environment, the thickness of the dielectric layer 111 can be 10.0 μm or less. Also, in order to achieve miniaturization and high capacitance of the multilayer electronic component 100, the thickness of the dielectric layer 111 can be 3.0 μm or less. In order to more easily achieve ultra-miniaturization and high capacitance, the thickness of the dielectric layer 111 can be 1.0 μm or less, preferably 0.6 μm or less, and more preferably 0.4 μm or less.

[0103] Here, the thickness td of the dielectric layer 111 can mean the thickness td of the dielectric layer 111 disposed between the first and second internal electrodes 121 and 122.

[0104] On the one hand, the thickness td of the dielectric layer 111 can represent the size of the dielectric layer 111 in the first direction. Also, the thickness td of the dielectric layer 111 can represent the average thickness td of the dielectric layer 111, and can represent the average size of the dielectric layer 111 in the first direction.

[0105] The average size of the dielectric layer 111 in the first direction can be measured by scanning an image of the cross-sections of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average size of one dielectric layer 111 in the first direction can mean the average value calculated by measuring the size in the first direction at 10 equally spaced points in the second direction for one dielectric layer 111 in the scanned image. The 10 equally spaced points can be specified by the capacitance forming portion Ac. Also, when such average value measurement is extended to 10 dielectric layers 111 to measure the average value, the average size of the dielectric layer 111 in the first direction can be further generalized.

[0106] The internal electrodes 121 and 122 can be alternately laminated with the dielectric layer 111.

[0107] The internal electrodes 121 and 122 can include a first internal electrode 121 and a second internal electrode 122. The first and second internal electrodes 121 and 122 are alternately arranged facing each other with the dielectric layer 111 constituting the main body 110 interposed therebetween, and can be respectively exposed on the third and fourth surfaces 3 and 4 of the main body 110.

[0108] More specifically, the first internal electrode 121 can be separated from the fourth surface 4 and exposed through the third surface 3, and the second internal electrode 122 can be separated from the third surface 3 and exposed through the fourth surface 4. A first external electrode 131 can be arranged on the third surface 3 of the main body 110 and connected to the first internal electrode 121, and a second external electrode 132 can be arranged on the fourth surface 4 of the main body 110 and connected to the second internal electrode 122.

[0109] That is, the first internal electrode 121 is not connected to the second external electrode 132, but is connected to the first external electrode 131, and the second internal electrode 122 is not connected to the first external electrode 131, but can be connected to the second external electrode 132. At this time, the first and second internal electrodes 121 and 122 can be electrically separated from each other by the dielectric layer 111 disposed in the middle.

[0110] On the other hand, the main body 110 can be formed by alternately laminating a ceramic green sheet printed with the first internal electrode 121 and a ceramic green sheet printed with the second internal electrode 122 and then firing them.

[0111] The material for forming the internal electrodes 121 and 122 is not particularly limited, and a material with excellent electrical conductivity can be used. For example, the internal electrodes 121 and 122 can include one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0112] Also, the internal electrodes 121 and 122 can be formed by printing a conductive paste for internal electrodes containing one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof on a ceramic green sheet. As the printing method of the conductive paste for internal electrodes, a screen printing method, a gravure printing method, or the like can be used, but the present invention is not limited thereto.

[0113] On the other hand, the thickness te of the internal electrodes 121 and 122 does not need to be particularly limited.

[0114] In order to ensure the reliability of the multilayer electronic component 100 in a high voltage environment, the thickness te of the internal electrodes 121 and 122 can be 3.0 μm or less. Also, in order to achieve miniaturization and high capacitance of the multilayer electronic component 100, the thickness of the internal electrodes 121 and 122 can be 1.0 μm or less, and in order to more easily achieve ultra-miniaturization and high capacitance, the thickness of the internal electrodes 121 and 122 can be 0.6 μm or less, and more preferably 0.4 μm or less.

[0115] Here, the thickness te of the internal electrodes 121 and 122 can mean the size of the internal electrodes 121 and 122 in the first direction. Note that the thickness te of the internal electrodes 121 and 122 can mean the average thickness te of the internal electrodes 121 and 122, and can mean the average size of the internal electrodes 121 and 122 in the first direction.

[0116] The average size of the internal electrodes 121 and 122 in the first direction can be measured by scanning an image of the cross-section of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average size of one internal electrode in the first direction can be the average value calculated by measuring the size in the first direction at 10 equally spaced points in the second direction for one internal electrode in the scanned image. The above 10 equally spaced points can be specified in the capacitance forming portion Ac. Also, when such average value measurement is extended to 10 internal electrodes to measure the average value, the average size of the internal electrodes in the first direction can be further generalized.

[0117] On the other hand, in one embodiment of the present invention, the average thickness td of at least one of the plurality of dielectric layers 111 and the average thickness te of at least one of the plurality of internal electrodes 121 and 122 can satisfy 2×te < td.

[0118] In other words, the average thickness td of one of the dielectric layers 111 can be even greater than twice the average thickness te of one of the internal electrodes 121, 122. Preferably, the average thickness td of the plurality of dielectric layers 111 can be even greater than twice the average thickness te of the plurality of internal electrodes 121, 122.

[0119] Generally, for high-voltage electrical components, the main issue is the reliability problem due to the decrease in breakdown voltage (BDV) under high-voltage environments.

[0120] Therefore, in order to prevent the decrease in breakdown voltage under high-voltage environments, by making the average thickness td of the dielectric layer 111 even greater than twice the average thickness te of the internal electrodes 121, 122, the thickness of the dielectric layer, which is the distance between the internal electrodes, can be increased, and the breakdown voltage characteristics can be improved.

[0121] When the average thickness td of the dielectric layer 111 is less than or equal to twice the average thickness te of the internal electrodes 121, 122, the average thickness of the dielectric layer, which is the distance between the internal electrodes, may be thin and the breakdown voltage may decrease, and there is a possibility of a short circuit occurring between the internal electrodes.

[0122] On the other hand, the main body 110 can include cover portions 112, 113 disposed on both end-surfaces in the first direction of the capacitance forming portion Ac.

[0123] Specifically, it can include a first cover portion 112 disposed on one surface in the first direction of the capacitance forming portion Ac and a second cover portion 113 disposed on the other surface in the first direction of the capacitance forming portion Ac. More specifically, it can include an upper cover portion 112 disposed on the upper part in the first direction of the capacitance forming portion Ac and a lower cover portion 113 disposed on the lower part in the first direction of the capacitance forming portion Ac.

[0124] The upper cover part 112 and the lower cover part 113 can be formed by laminating a single dielectric layer 111 or two or more dielectric layers 111 in the first direction on the upper and lower surfaces of the capacitance forming part Ac, and can basically play a role in preventing damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0125] The upper cover part 112 and the lower cover part 113 do not include the internal electrodes 121 and 122 and can include the same material as the dielectric layer 111. That is, the upper cover part 112 and the lower cover part 113 can include a ceramic material, for example, can include a barium titanate (BaTiO3)-based ceramic material.

[0126] On the other hand, the thickness tc of the cover parts 112 and 113 does not need to be particularly limited.

[0127] However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component, the thickness tc of the cover parts 112 and 113 can be 100 μm or less, preferably 30 μm or less, and more preferably 20 μm or less in the case of ultra-small products.

[0128] Here, the thickness tc of the cover parts 112 and 113 can mean the size of the cover parts 112 and 113 in the first direction. Also, the thickness tc of the cover parts 112 and 113 can mean the average thickness tc of the cover parts 112 and 113 and can mean the average size of the cover parts 112 and 113 in the first direction.

[0129] The average size of the cover parts 112 and 113 in the first direction can be measured by scanning an image of the cross-section of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, it can mean the average value calculated by measuring the size in the first direction at 10 equally spaced points in the second direction in an image of one scanned cover part.

[0130] In addition, the average size of the cover portion in the first direction measured by the method described above can have substantially the same size as the average size of the cover portion in the first direction in the cross-sections of the main body 110 in the first and third directions.

[0131] On the other hand, the multilayer electronic component 100 can include side margin portions 114 and 115 disposed on both end surfaces of the main body 110 in the third direction.

[0132] More specifically, the side margin portions 114 and 115 can include a first side margin portion 114 disposed on the fifth surface 5 of the main body 110 and a second side margin portion 115 disposed on the sixth surface 6 of the main body 110.

[0133] As shown in the figure, the side margin portions 114 and 115 can mean the regions between the boundary surfaces of the main body 110 and the end surfaces of the first and second internal electrodes 121 and 122 in the third direction, based on the cross-sections of the main body 110 in the first and third directions.

[0134] Except for the places where the side margin portions 114 and 115 are formed on the ceramic green sheet applied to the capacitance forming portion Ac, the side margin portions 114 and 115 can be formed by applying a conductive paste to form the internal electrodes 121 and 122. After cutting so that the internal electrodes 121 and 122 after lamination are exposed on the fifth and sixth surfaces 5 and 6 of the main body 110 to suppress the steps caused by the internal electrodes 121 and 122, a single dielectric layer 111 or two or more dielectric layers 111 can also be laminated in the third direction on both end surfaces of the capacitance forming portion Ac in the third direction to form.

[0135] The side margin portions 114 and 115 can basically play a role in preventing damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0136] The first side margin portion 114 and the second side margin portion 115 do not include the internal electrodes 121 and 122, and can include the same material as the dielectric layer 111 of the capacitance forming portion Ac. That is, the first side margin portion 114 and the second side margin portion 115 can include a ceramic material, for example, can include a barium titanate (BaTiO3)-based ceramic material.

[0137] On the other hand, the widths wm of the first and second side margin portions 114 and 115 do not need to be particularly limited.

[0138] However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component 100, the widths wm of the side margin portions 114 and 115 can be 100 μm or less, preferably 30 μm or less, and in the case of ultra-small products, more preferably 20 μm or less.

[0139] Here, the width wm of the side margin portions 114 and 115 can mean the size in the third direction of the side margin portions 114 and 115. Also, the width wm of the side margin portions 114 and 115 can mean the average width wm of the side margin portions 114 and 115, and can mean the average size in the third direction of the side margin portions 114 and 115.

[0140] The average size in the third direction of the side margin portions 114 and 115 can be measured by scanning an image of the cross-section in the first and third directions of the main body 110 with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, in an image obtained by scanning one side margin portion, it can mean the average value calculated by measuring the size in the third direction at 10 equally spaced points in the first direction.

[0141] In one embodiment of the present invention, a structure in which the multilayer electronic component 100 has two external electrodes 131 and 132 is described, but the number, shape, etc. of the external electrodes 131 and 132 can vary according to the form of the internal electrodes 121 and 122 and other purposes.

[0142] The external electrodes 131 and 132 are arranged on the main body 110 and can be connected to the internal electrodes 121 and 122.

[0143] More specifically, the external electrodes 131 and 132 can be respectively arranged on the third and fourth surfaces 3 and 4 of the main body 110, and include first and second external electrodes 131 and 132 respectively connected to the first and second internal electrodes 121 and 122. That is, the first external electrode 131 can be arranged on the third surface 3 of the main body and connected to the first internal electrode 121, and the second external electrode 132 can be arranged on the fourth surface 4 of the main body and connected to the second internal electrode 122.

[0144] Furthermore, the external electrodes 131 and 132 can extend and be arranged on a part of the first and second surfaces 1 and 2 of the main body 110, or can extend and be arranged on a part of the fifth and sixth surfaces 5 and 6 of the main body 110. That is, the first external electrode 131 can be arranged on a part of the first, second, fifth, and sixth surfaces 1, 2, 5, 6 of the main body 110 and on the third surface 3 of the main body 110, and the second external electrode 132 can be arranged on a part of the first, second, fifth, and sixth surfaces 1, 2, 5, 6 of the main body 110 and on the third surface 3 of the main body 110.

[0145] On the other hand, the external electrodes 131 and 132 can be formed using any material as long as it has electrical conductivity such as metal, and a specific material can be determined considering electrical characteristics, structural stability, etc., and can further have a multilayer structure.

[0146] For example, the external electrodes 131 and 132 can include an electrode layer arranged on the main body 110 and a plating layer arranged on the electrode layer.

[0147] As a more specific example for the electrode layer, the electrode layer can include first electrode layers 131a and 132a which are fired electrodes containing a first conductive metal and glass, or can include second electrode layers 131b and 132b which are resin-based electrodes containing a second conductive metal and resin.

[0148] Here, the conductive metal contained in the first electrode layers 131a and 132a can be defined as the first conductive metal, and the conductive metal contained in the second electrode layers 131b and 132b can be defined as the second conductive metal. At this time, the first conductive metal and the second conductive metal can be the same as or different from each other. When including a plurality of conductive metals, it can include conductive metals where only some are the same, but it is not particularly limited thereto.

[0149] Also, the electrode layers 131a, 132a, 131b, and 132b can be in a form where a fired electrode and a resin-based electrode are sequentially formed on the main body 110.

[0150] Also, the electrode layers 131a, 132a, 131b, and 132b can be formed by a method of transferring a sheet containing a conductive metal onto the main body 110, or can be formed by a method of transferring a sheet containing a conductive metal onto a fired electrode.

[0151] As the conductive metal contained in the electrode layers 131a, 132a, 131b, and 132b, a material with excellent electrical conductivity can be used. For example, the conductive metal can include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, but is not particularly limited thereto.

[0152] In one embodiment of the present invention, the electrode layers 131a, 132a, 131b, and 132b can have a two-layer structure including the first electrode layers 131a and 132a and the second electrode layers 131b and 132b. Thereby, the external electrodes 131 and 132 can include the first electrode layers 131a and 132a containing the first conductive metal and glass, and the second electrode layers 131b and 132b disposed on the first electrode layers 131a and 132a and containing the second conductive metal and resin.

[0153] The first electrode layers 131a and 132a play a role in improving the bonding property with the main body 110 by including glass, and the second electrode layers 131b and 132b can play a role in improving the bending strength by including resin.

[0154] The first conductive metal contained in the first electrode layers 131a and 132a is not particularly limited as long as it can be electrically connected to the internal electrodes 121 and 122 for capacitance formation. For example, it can include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0155] The first electrode layers 131a and 132a can be formed by applying a conductive paste provided by adding glass frit to the first conductive metal particles and then firing.

[0156] The second conductive metal contained in the second electrode layers 131b and 132b can play a role in being electrically connected to the first electrode layers 131a and 132a.

[0157] The conductive metal contained in the second electrode layers 131b and 132b is not particularly limited as long as it can be electrically connected to the electrode layers 131a and 132a, and can include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0158] The second conductive metal contained in the second electrode layers 131b and 132b can include one or more of spherical particles and flake-like particles. That is, the second conductive metal can consist only of flake-like particles, can consist only of spherical particles, or can be in a form in which flake-like particles and spherical particles are mixed. Here, the spherical particles can include forms that are not perfectly spherical. For example, they can include forms in which the ratio of the length of the major axis to the length of the minor axis (major axis / minor axis) is 1.45 or less. The flake-like particles mean particles having a flat and elongated form and are not particularly limited. For example, the ratio of the length of the major axis to the length of the minor axis (major axis / minor axis) can be 1.95 or more. The lengths of the major axis and the minor axis of the above spherical particles and flake-like particles can be measured from an image obtained by scanning cross-sections in the first and second directions cut at the central part in the third direction of the multilayer electronic component with a scanning electron microscope (SEM).

[0159] The resin contained in the second electrode layers 131b and 132b can play a role in ensuring bondability and absorbing shock. The resin contained in the second electrode layers 131b and 132b has bondability and shock absorbability and is not particularly limited as long as it can be mixed with the second conductive metal particles to form a paste. For example, it can include an epoxy resin.

[0160] Also, the second electrode layers 131b and 132b can include a plurality of second conductive metal particles, an intermetallic compound, and a resin. By including the intermetallic compound, the electrical connectivity with the first electrode layers 131a and 132a can be further improved. The intermetallic compound plays a role in connecting a plurality of metal particles to improve electrical connectivity and can play a role in surrounding and connecting the plurality of metal particles to each other.

[0161] At this time, the intermetallic compound can contain a metal having a melting point lower than the curing temperature of the resin. That is, since the intermetallic compound contains a metal having a melting point lower than the curing temperature of the resin, the metal having a melting point lower than the curing temperature of the resin melts during the drying and curing processes, forms a part of the metal particles and the intermetallic compound, and comes to surround the metal particles. At this time, the intermetallic compound can preferably contain a low-melting-point metal of 300 °C or lower.

[0162] For example, it can contain Sn having a melting point of 213 to 220 °C. Sn melts during the drying and curing processes, and the melted Sn wets high-melting-point metal particles such as Ag, Ni, or Cu by capillary action and reacts with a part of the Ag, Ni, or Cu metal particles to form intermetallic compounds such as Ag3Sn, Ni3Sn4, Cu6Sn5, Cu3Sn. Ag, Ni, or Cu not involved in the reaction remains in the form of metal particles.

[0163] Therefore, the plurality of second conductive metal particles can contain one or more of Ag, Ni, and Cu, and the intermetallic compound can contain one or more of Ag3Sn, Ni3Sn4, Cu6Sn5, and Cu3Sn.

[0164] The plating layers 131c and 132c can play a role in improving the mounting characteristics.

[0165] The types of the plating layers 131c and 132c are not particularly limited, and they can be single-layer plating layers 131c and 132c containing one or more of nickel (Ni), tin (Sn), silver (Ag), palladium (Pd), and alloys thereof, and can be formed of a plurality of layers.

[0166] As a more specific example of the plating layers 131c, 132c, the plating layers 131c, 132c may be Ni plating layers or Sn plating layers, and although not shown, may be in a form in which a Ni plating layer and a Sn plating layer are sequentially formed on an electrode layer, or in a form in which a Sn plating layer, a Ni plating layer and a Sn plating layer are sequentially formed. Also, the plating layers 131c, 132c may include a plurality of Ni plating layers and / or a plurality of Sn plating layers.

[0167] The size of the multilayer electronic component 100 does not need to be particularly limited.

[0168] However, in order to simultaneously achieve miniaturization and high capacity, the thickness of the dielectric layers and internal electrodes must be reduced and the number of layers must be increased, so the effects of the present invention become more pronounced for multilayer electronic components 100 having a size of 3216 (length x width: 3.2 mm x 1.6 mm) or less.

[0169] The present invention will be described in more detail below with reference to examples. However, these examples are intended to aid in the specific understanding of the present invention, and the scope of the present invention is not limited to these examples.

[0170] (Example) Tables 1, 3, and 5 show the RE type of the third subcomponent (RE here indicates the type of rare earth element added and that it was added in the form of an oxide), the firing temperature, firing time, firing atmosphere, and the content of the first to fifth subcomponent elements added. The number of moles of the first to fifth subcomponent elements is shown based on 100 moles of BaTiO3, which is the main component, and corresponds to the element standard where all of the first to fifth subcomponent elements are not oxides. For example, in Example 1-1, the fact that 3.5 moles of the third subcomponent element are added means that 3.5 moles of lanthanum (La), a rare earth element, are added to 100 moles of the main component.

[0171] As the main component base material, BaTiO3 powder with an average particle size of 200 nm was used. Using zirconia beads as the mixing / dispersing medium, the raw material powder containing the main component BaTiO3 powder and the sub-components corresponding to the compositions specified in Tables 1, 3, and 5 was mixed with an ethanol / toluene solvent and a dispersant and milled for 12 hours. After mixing the binder, it was milled for another 12 hours to provide a slurry. With the thus-produced slurry, a formed sheet was manufactured with a thickness of 5.0 μm using a sheet manufacturing molding machine. Thereafter, nickel (Ni) internal electrode printing was performed on the formed sheet. The upper and lower cover parts were manufactured by laminating 25 layers, and 22 printed active sheets were pressed and laminated to manufacture a bar. The crimped bar was cut into chips with a size of 3216 (length × width: 3.2 mm × 1.6 mm) using a cutting machine. After plasticizing the manufactured 3216-size MLCC chips, they were fired under the conditions of maintaining the temperature at 1200 °C to 1260 °C for 2 hours in a reducing atmosphere of 0.1% H2 / 99.9% N2 to 0.7% H2 / 99.5% N2 (H2O / H2 / N2 atmosphere), and then re-oxidized in a N2 atmosphere at 1080 °C for 3 hours. Here, the 0.1% H2 concentration corresponds to the condition of an electromotive force of 680 mV measured by an oxygen partial pressure measuring instrument, and the 0.7% H2 concentration corresponds to the condition of an electromotive force of 780 mV. After the termination process and electrode firing with copper (Cu) paste on the fired chips, the external electrodes were completed. As a result, an MLCC chip with a size of 3216 was manufactured, where the thickness of the dielectric layer after firing was approximately 2.4 μm and the number of layers of the dielectric layer between the internal electrodes was 20 layers.

[0172] In Tables 2, 4, and 6, A / (A + B) and A + B are based on the cross-sections in the first and second directions at the center of the main body 110 in the third direction. They represent the ratio A / (A + B) of the number A of the first secondary-phase crystallites (also referred to as RTO) contained in the dielectric layer (excluding the internal electrodes) within a cross-sectional area of 1.85 μm × 1.85 μm in the capacitance-forming portion Ac to the total (A + B) of the number A of the first secondary-phase crystallites and the number B of the second secondary-phase crystallites (also referred to as RSO), and the total (A + B) of the number A of the first secondary-phase crystallites and the number B of the second secondary-phase crystallites.

[0173] The room-temperature dielectric constant and DF (dielectric loss factor) were obtained by measuring the capacitance or capacitance change rate of the MLCC chip at room temperature using an LCR meter under the conditions of 1 kHz and AC 0.5 V / μm, and calculating the dielectric constant of the MLCC chip dielectric from the capacitance, the thickness of the dielectric layer of the MLCC chip, the internal electrode area, and the number of stacked dielectric layers. When the room-temperature dielectric constant is 1500 or more, it is evaluated as excellent; when it is less than 1500, it is evaluated as poor. When DF is 1.5% or more, it is evaluated as excellent; when it is less than 1.5%, it is evaluated as poor.

[0174] IR (high-temperature insulation resistance) was described by taking 10 samples each, measuring the insulation resistance value after 60 seconds of curing under the condition of applying DC 30 V / μm at a temperature of 150°C. When IR is 3.0E+5 Ω or more, it is evaluated as excellent; when it is less than 3.0E+5 Ω, it is evaluated as poor.

[0175] TCC (change in capacitance due to temperature) was described by measuring the change rate of capacitance in the temperature range from -55°C to 125°C with reference to the capacitance at 25°C. When the change rate of capacitance in the temperature range from -55°C to 125°C is -15% or more and +15% or less, the TCC characteristic is evaluated as excellent; when it deviates from this change rate of capacitance, it is evaluated as poor.

[0176] BDV (dielectric breakdown voltage) was described by measuring the voltage (V) at which chip breakdown occurs when the voltage of the chip is gradually increased at a voltage increase rate of 10 V / 0.1 s with a reference initial voltage of 0 V.

[0177] The MTTF was determined through highly accelerated life testing (HALT). For each example, a voltage corresponding to an electric field of 42 V / μm was applied to 40 test pieces at 150°C, and the time (hr) until a failure occurred was measured to calculate the mean time to failure (MTTF).

[0178] During the evaluation of the characteristics of the MLCC chip, characteristics with a normal temperature dielectric constant of 1500 or more, a dielectric loss factor (DF) of 1.5% or more, a breakdown voltage (BDV) of 350 V or more, a mean time to failure (MTTF) of 200 hours or more under the accelerated test conditions (HALT) of applying an electric field of 42 V / μm at a temperature of 150°C, an insulation resistance (IR, high-temperature insulation resistance) of 3.0E+5 Ω or more at a temperature of 150°C, and an X7R characteristic which is the change rate of capacitance (TCC) according to the target temperature (a characteristic in which the capacitance in the temperature range of -55°C to 125°C satisfies -15% to 15% based on the capacitance at 25°C) were evaluated as preferred examples.

[0179] [Table 1]

[0180] [Table 2]

[0181] The following describes Tables 1 and 2. Examples 1-1 to 1-8 in Table 1 show examples with eight types of third sub-components (RE2O3) (La2O3, Sm2O3, Dy2O3, Tb4O7, Ho2O3, Er2O3, Gd2O3, Yb2O3) when the total of the valence-variable acceptor elements Mn and V, which are the first sub-component elements, is 0.4 mol (Mn 0.2 mol, V 0.2 mol), the content of Mg, which is the second sub-component element, is 0.5 mol, the content of RE, which is the third sub-component element, is 3.5 mol, the content of Ba, which is the fourth sub-component element, is 1.0 mol, and the content of Si, which is the fifth sub-component element, is 1.4 mol, with respect to 100 mol of the main component BaTiO3 base material. At this time, a firing temperature of 1230 °C, a firing time of 1.5 hr, and an atmosphere of EMF 780 mV (hydrogen concentration 0.7%) were applied.

[0182] Examples 1-1 to 1-8 in Table 2 show the characteristics of the Prototype MLCC sample chips corresponding to these examples. Up to Examples 1-1 to 1-7, all meet the characteristics of the target Prototype MLCC chip. However, for Yb2O3 in Example 1-8, the MTTF value remains at 87 hr and thus does not meet the judgment criterion of 200 hr. When observing an arbitrary 1.85 um × 1.85 um region without an internal electrode using Yb2O3, the number of secondary phase crystal grains (A + B) was found to be 5. At this time, since the ratio of A / (A + B) is 0.6 and A is more than B, it can be seen that rapid deterioration occurred.

[0183] Examples 2-1 to 2-4 show examples when the third sub-component Dy2O3 is applied and firing temperatures of 1190 °C, 1210 °C, 1250 °C, and 1270 °C are applied. When fired at 1190 °C, a temperature lower than the reference firing temperature of 1230 °C as in Example 2-1, the number (A + B) of secondary-phase crystal grains within the observation area (1.85 μm × 1.85 μm) was found to be 7, and since the ratio of A / (A + B) corresponds to 0.43, it can be seen that more A was generated than B. At this time, the MTTF was 142 hr and did not meet the judgment criteria, and it can be predicted that this was because additive solid solution did not occur sufficiently. When fired at 1210 °C in Example 2-2, the number (A + B) of secondary-phase crystal grains within the observation area was 5, and since the ratio of A / (A + B) corresponds to 0.2, it can be seen that less A was generated than B. It can be seen that all characteristics including MTTF meet the characteristic judgment. It can be seen that even when the firing temperature is raised to 1250 °C, the characteristics of the Prototype MLCC chip are met. Under the firing conditions of 1270 °C in Example 2-4, the IR value was 1.2E+05 Ω, and it can be seen that the IR value decreased with respect to 1230 °C. Also, it can be seen that BDV and MTTF did not reach the judgment criteria. This is considered to be due to the IR decrease caused by excessive donor element doping (donor-doped), and since all the observed secondary-phase crystal grains are first secondary-phase crystal grains, rapid MTTF degradation occurred.

[0184] Examples 3-1 and 3-2 are the results when the third sub-component Dy2O3, a firing temperature of 1230 °C, and an EMF of 780 mV are applied, and the firing time is increased from 1.5 hr to 2 hr and 3 hr, respectively. In the case of Example 3-1, it decreased from 241 hr, which was the MTTF of Example 1-3, to 215 hr, but it meets the judgment criteria. In the case of the 3-hr holding time of Example 3-2, the number (A + B) of secondary-phase crystal grains was observed to be 7, and all were observed as first secondary-phase crystal grains, from which it can be seen that rapid degradation occurred and the MTTF remained at 54 hr and did not meet the judgment criteria.

[0185] Examples 4-1, 4-2, and 4-3 are examples when the third sub-component Dy2O3, firing temperature 1230 °C, and firing time 1.5 h are applied and the EMF is changed to 740 mV (hydrogen concentration 0.3%), 760 mV (hydrogen concentration 0.5%), and 800 mV (hydrogen concentration 1.0%). Under the condition of a hydrogen concentration of 0.3% in Example 4-1, the number of secondary phase crystal grains (A + B) is 8, the ratio of A / (A + B) is 0.25, which conforms to the determination of the number and ratio of secondary phase crystal grains, and the MTTF is also 230 h, so it can be seen that it conforms to the characteristic determination. At an EMF of 760 mV in Example 4-2, it can be seen that all characteristics conform to the determination criteria. At an EMF of 800 mV in Example 4-3, the number of secondary phase crystal grains (A + B) within the observation area (1.85 μm × 1.85 μm) decreased to 6, and the ratio of A / (A + B) achieved 0.4 or less, so the MTTF also shows 235 h without a significant decrease. With the increase in the reducing atmosphere, solid solution strengthening of the additive appears, and the generation frequency of secondary phase crystal grains decreases, and it is considered that the number of secondary phase crystal grains (A + B) decreases. Further strengthened firing in a reducing atmosphere may cause a decrease in the IR-level due to an increase in leakage current. Therefore, in order to achieve the target characteristics of the present invention, the third sub-component corresponds to La2O3, Sm2O3, Dy2O3, Tb4O7, Ho2O3, Er2O3, Gd2O3, the firing temperature is 1230 °C or 1250 °C, the firing time is 1.5 h or 2 h, the EMF is maintained at 740 mV (hydrogen concentration 0.3%) to 800 mV (hydrogen concentration 1.0%), and it can be seen that it is realized under the condition that the ratio of A / (A + B) is 0.4 or less.

[0186] Through Tables 1 and 2, it can be seen that when the firing temperature is relatively high or the firing holding time is long, more A is generated than B, or only the first secondary phase crystal grains are observed in all cases. An increase in the firing temperature and an increase in the holding time may induce the aggregation of the first secondary phase crystal grains, resulting in an increase in the number of overall secondary phase crystal grains. At the same time, it is understood that the second secondary phase crystal grains are converted into the first secondary phase crystal grains, and it can be seen that there is no significant change in the number of overall secondary phase crystal grains. Furthermore, since the electric field is concentrated in the first secondary phase crystal grains with larger sizes, faster movement of charges and oxygen vacancies is expected, which is predicted to induce faster semiconductorization and may cause a sharp decrease in MTTF.

[0187]

Table 3

[0188]

Table 4

[0189] Examples 5-1 to 6-5 in Table 3 show examples when the contents of the first sub-component elements (Mn, V) and the second sub-component element (Mg) are changed in 100 mol of the main component BaTiO3 base material, and the contents of the third sub-component (Dy) element, the fourth sub-component (Ba) element, and the fifth sub-component (Si) element are maintained at 3.5 mol, 1.0 mol, and 1.4 mol, respectively. Examples 5-1 to 5-4 show the characteristics when the first sub-component elements Mn and V are each decreased from the existing 0.2 mol to 0.1 mol or increased to 0.3 mol. In Example 5-1, the characteristics are shown when Mn is reduced to 0.1 mol and V is maintained at 0.2 mol, and the ratio of A / (A + B) is 0.17, and it can be seen that all characteristics are satisfied. Example 5-2 shows the characteristics when Mn is increased to 0.3 mol and V is maintained at 0.2 mol. When Mn is further increased, side effects occur where IR, BDV, and MTTF are further improved, but the low-temperature part TCC deteriorates. Example 5-3 shows an example when Mn is maintained at 0.2 mol and V is reduced to 0.1 mol, and the ratio of A / (A + B) satisfies 0.25, and all other characteristics are judged to be good. Example 5-4 is obtained by maintaining Mn at 0.2 mol and additionally increasing V by 0.1 mol (total 0.3 mol). It can be seen that the room-temperature dielectric constant decreases compared to Example 5-3, but the remaining characteristics including MTTF are similar.

[0190] Examples 6-1 to 6-5 show the characteristics of the Prototype MLCC chips when Mg, which is the second sub-component element, is 0.1 mol, 0.3 mol, 0.4 mol, 0.6 mol, and 0.9 mol. In Example 6-1, when the Mg content is 0.1 mol, the number (A + B) of secondary-phase crystal grains within the observation area (1.85 μm × 1.85 μm) is 4, which is less than 5. The IR level is 2.8E+05 Ω, showing a decrease relative to the reference value, indicating that the low-temperature part TCC and BDV have deteriorated. However, it can be seen that the MTTF is 207 hr, which is higher than the reference value. In Example 6-2, when Mg is reduced to 0.3 mol, the ratio of A / (A + B) is 0.17, and the number (A + B) of secondary-phase crystal grains observed is 6. It can be seen that all characteristics are above the reference value. Example 6-3, similar to Example 6-2, shows that all characteristics are met. Example 6-4 shows that, except for the high-temperature part TCC at 125 °C, all characteristics are above the reference value. Example 6-5 shows the characteristics of the chip when Mg is increased to 0.9 mol. Similar to other examples, there is no significant change in the ratio of A / (A + B), but it can be seen that the MTTF increases to 261 hr. However, it can be seen that the high-temperature part TCC deteriorates further due to the effect of suppressing grain growth as in Example 6-4. Furthermore, the decrease in MTTF, BDV, and high-temperature IR is expected to be due to the formation of secondary-phase crystal grains of the increased Mg. Examples 5-1 to 5-4 and 6-1 to 6-5 of the present invention are preferably considered as reference values for characteristics by adjusting the first sub-component rather than as examples for characteristic determination.

[0191]

Table 5

[0192]

Table 6

[0193] Examples 7-1 to 9-6 in Tables 5 and 6 investigated the characteristics of Prototype MLCC chips by adjusting the contents of the third sub-component RE, the fourth sub-component Ba, and the fifth sub-component Si. In Examples 7-1 to 7-6, the content of Dy, which is the third sub-component element, was changed from 1.5 mol to 2.0 mol, 2.5 mol, 4.5 mol, 5.5 mol, and 6.5 mol, while the contents of the other sub-components were all the same. When the content of the third sub-component element in Example 7-1 was decreased to 1.5 mol, it was found that no secondary phase crystal grains were generated (A + B = 0) in any observation region (1.85 μm × 1.85 μm). At this time, it was found that the MTTF decreased to 177 hr and did not meet the judgment criteria. When the third sub-component element decreased to 1.5 mol or less, it was predicted that the amount of rare earth elements required for donor-doped would decrease, resulting in a decrease in reliability. As the characteristics when the content of the third sub-component element in Example 7-2 was increased to 2.0 mol, it was found that the number of secondary phase crystal grains (A + B) in any observation region (1.85 μm × 1.85 μm) increased to 3 compared with Example 7-1, and the MTTF increased from 177 hr to 206 hr. However, it was found that the high-temperature IR and BDV values did not meet the reference values. As the characteristics when the content of the third sub-component element in Example 7-3 was increased to 2.5 mol, it was found that the number of secondary phase crystal grains (A + B) in any observation region (1.85 μm × 1.85 μm) increased to 4 compared with Example 7-2, and it was found that the remaining characteristics except for BDV were met. In Examples 7-4 and 7-5, the content of the third sub-component element was increased to 4.5 mol and 5.5 mol, respectively, and it was found that the ratio of A / (A + B) was less than 0.4 and had no significant effect on reliability, and it was also found that the other characteristics met the judgment criteria. In Example 7-6, the content of the third sub-component element was increased to 6.5 mol, and it was found that the number of secondary phase crystal grains (A + B) in any observation area (1.85 μm × 1.85 μm) increased to 20. The ratio of A / (A + B) was also 0.4 or more, and as the number of secondary phase crystal grains (A + B) increased, A was also seen to increase, and it was seen that it caused a decrease in the high-temperature IR level and a rapid deterioration of MTTF due to the remaining secondary phase crystal grains.

[0194] Examples 8-1 to 8-7 are those in which the Ba content, which is the fourth sub-component element, is changed from 0.25 mol, 0.5 mol, 0.75 mol, 1.25 mol, 1.5 mol, 2.5 mol to 3.5 mol, and the contents of the other sub-components are all the same. In Example 8-1, an experiment was conducted by adding 0.25 mol of the content of the fourth sub-component element. The number of secondary-phase crystal grains (A + B) within an arbitrary observation area (1.85 μm × 1.85 μm) was observed to be 15, and the ratio of A / (A + B) was 0.73. It can be seen that more of the first secondary-phase crystal grains were generated than the second secondary-phase crystal grains (A > B). As a result, it can be seen that the high-temperature IR level decreased to 1.5E+05 Ω, and the MTTF value also decreased to 83 hr. In Example 8-2, an experiment was conducted by adding 0.5 mol of the content of the fourth sub-component element. It can be seen that the number of secondary-phase crystal grains (A + B) within an arbitrary observation area (1.85 μm × 1.85 μm) decreased compared to Example 8-1. However, the ratio of A / (A + B) was 0.63, which is a value greater than 0.4. It can be seen that more of the first secondary-phase crystal grains were generated than the second secondary-phase crystal grains (A > B). Since the high-temperature IR level was also 2.3E+05 Ω, it did not meet the characteristic determination, and it can be seen that the MTTF was also 127 hr and did not meet the specific determination. In Example 8-3, MLCC production was carried out by adding 0.75 mol of the content of the fourth sub-component element, and it can be seen that the high-temperature IR level increased compared to Example 8-2 and met the specific determination. However, since the ratio of A / (A + B) was 0.5, it can be predicted that it is not excellent in reliability. The MTTF characteristic of Example 8-3 was 185 hr, and it can be seen that it did not meet the determination criteria. Examples 8-4 and 8-5 correspond to 1.25 mol and 1.5 mol of the content of the fourth sub-component element, respectively, and it can be seen that all characteristics are met. The number of secondary-phase crystal grains (A + B) within an arbitrary observation area (1.85 μm × 1.85 μm) in the two examples decreased compared to Example 8-3, and it can be seen that fewer of the first secondary-phase crystal grains were generated than the second secondary-phase crystal grains (A < B).

[0195] Example 8-6 is obtained by adding 2.5 mol of the fourth sub-component element, and it can be seen that the number (A + B) of secondary-phase crystal grains within an arbitrary observation area (1.85 μm × 1.85 μm) is 3. It can be seen that the MTTF characteristic decreases up to 206 hr, and deterioration is observed in high-temperature IR, BDV, and high-temperature part TCC. Example 8-7 is obtained by adding 3.5 mol of the fourth sub-component element, and it can be seen that the number (A + B) of secondary-phase crystal grains within an arbitrary observation area (1.85 μm × 1.85 μm) has decreased to 2, and it can be seen that only the second secondary-phase crystal grains exist. However, since the excessively increased content of the fourth sub-component element has an adverse effect of increasing the appropriate firing temperature, sufficient solid solution of the rare-earth element, which is the third sub-component element, may not be achieved, and the rare-earth element, which is the third sub-component element that is not solid-solved, may cause a problem of deteriorating TCC. In Example 8-7, it can be confirmed that the TCC, MTTF, and high-temperature IR characteristics at 125 °C do not match. When the content of the fourth sub-component element is relatively small, it can be seen that the generation of the first secondary-phase crystal grains is promoted, which may cause rapid deterioration of reliability. Conversely, when a very large amount of the fourth sub-component element is added, the solid solution of the additive is weakened due to the decrease in grain growth and the increase in firing temperature, and the problem of non-secured density may similarly cause rapid deterioration of reliability. Therefore, it is important to ensure an appropriate content of the fourth sub-component element to minimize the generation of the first secondary-phase crystal grains and promote the solid solution of the rare-earth element, which is the third sub-component element, into the shell.

[0196] Examples 9-1 to 9-6 are those in which the Si content, which is the fifth sub-component element, is changed to 0.5 mol, 0.8 mol, 1.1 mol, 1.7 mol, 2.0 mol, and 3.0 mol. The contents of the remaining sub-components are the same. Example 9-1 is one in which 0.5 mol of the fifth sub-component element is added. The number (A + B) of secondary phase crystal grains within an arbitrary observation area (1.85 μm × 1.85 μm) is 16, and it can be seen that more first secondary phase crystal grains are formed than second secondary phase crystal grains (A > B). As a result, the high-temperature IR level decreases to 1.8E+05 Ω, and the MTTF decreases to 147 hr, not meeting the characteristic determination. Example 9-2 is one in which 0.8 mol of the fifth sub-component element is added. The number (A + B) of secondary phase crystal grains within an arbitrary observation area (1.85 μm × 1.85 μm) is 11. However, since the ratio of A / (A + B) is 0.55, a decrease in the high-temperature IR level and rapid deterioration of reliability can be predicted due to the high ratio of the first secondary phase crystal grains. The high-temperature IR level of Example 9-2 is 2.4E+05 Ω, and the MTTF is 195 hr, so it can be seen that it does not reach the specific determination. Example 9-3 is one in which 1.1 mol of the fifth sub-component element is added. It can be seen that the number (A + B) of secondary phase crystal grains within an arbitrary observation area (1.85 μm × 1.85 μm) decreased to 8, and fewer first secondary phase crystal grains were formed than second secondary phase crystal grains (A < B), and it can be seen that it has no significant effect on the IR level and MTTF values. From Example 9-4 to 9-6, even when the content of the fifth sub-component element is gradually increased, there is no significant difference in the number (A + B) of secondary phase crystal grains within an arbitrary observation area (1.85 μm × 1.85 μm), and fewer first secondary phase crystal grains are formed than second secondary phase crystal grains (A < B), so it can be seen that it has a good MTTF level. Through this example, when the Si content, which is the fifth sub-component element, is relatively low, the content of the fifth sub-component element required for the formation of the second secondary phase crystal grains is insufficient, promoting the formation of the first secondary phase crystal grains, and it can be predicted that the deterioration of reliability will occur more rapidly.

[0197] Therefore, in order to achieve the target characteristics of the present invention, it can be understood that the characteristics of the Prototype MLCC chip are satisfied under the condition that the content of the third sub-component element is maintained at 3.5 to 5.5 mol, the content of the fourth sub-component element is maintained at 1.25 to 1.5 mol, and the content of the fifth sub-component element is maintained at 1.1 to 3.0 mol.

[0198] As described above, the embodiments of the present invention have been described in detail. However, the present invention is not limited by the above-described embodiments and the accompanying drawings, but is limited by the appended claims. Therefore, within the scope not departing from the technical idea of the present invention described in the claims, various forms of substitution, modification, and change can be made by those having ordinary knowledge in the technical field, and this can also be said to belong to the scope of the present invention.

[0199] In addition, the expression "one embodiment" used in the present disclosure does not mean the same embodiment, but is provided to emphasize and explain each different unique feature. However, the above-presented one embodiment does not exclude being implemented in combination with the features of another one embodiment. For example, even if a matter described in a specific one embodiment is not described in another one embodiment, it can be understood as an explanation related to another one embodiment as long as there is no explanation contrary to or inconsistent with that matter in another one embodiment.

[0200] The terms used in the present disclosure are merely used to explain one embodiment and are not intended to limit the present disclosure. At this time, the singular expression includes the plural expression unless the context clearly indicates otherwise.

Explanation of Reference Numerals

[0201] 10 First secondary-phase crystal grains 20 Second secondary-phase crystal grains 30 Dielectric crystal grains 100 Multilayer electronic component 110 Body 111 Dielectric layer 112, 113 Cover portions 114 and 115 side margin parts 121 and 122 internal electrodes 131 and 132 external electrodes

Claims

1. a main body including a capacitance forming portion including a dielectric layer and an internal electrode; an external electrode disposed on the body; When the secondary phase crystal grains containing a rare earth element and titanium (Ti) are defined as first secondary phase crystal grains, the secondary phase crystal grains containing the rare earth element and silicon (Si) are defined as second secondary phase crystal grains, the number of the first secondary phase crystal grains contained in the capacitance forming portion is defined as A, and the number of the second secondary phase crystal grains contained in the capacitance forming portion is defined as B, The capacitance forming portion satisfies 0<A / (A+B)≦0.

4.

2. 2. The multilayer electronic component according to claim 1, wherein the capacitance forming portion has a cross-sectional area of ​​1.85 μm×1.85 μm that satisfies the condition 0<A / (A+B)≦0.

4.

3. 3. The multilayer electronic component according to claim 2, wherein the cross-sectional area of ​​1.85 μm×1.85 μm that satisfies the condition 0<A / (A+B)≦0.4 satisfies the relationship between A and B, which is 5≦A+B<20.

4. 2. The multilayer electronic component according to claim 1, wherein the rare earth element is at least one of lanthanum (La), samarium (Sm), dysprosium (Dy), terbium (Tb), holmium (Ho), erbium (Er), and gadolinium (Gd).

5. 2. The multilayer electronic component according to claim 1, wherein the rare earth elements do not include at least one of ytterbium (Yb) and yttrium (Y).

6. 2. The multilayer electronic component according to claim 1, wherein a ratio of an average atomic percentage of rare earth elements to an average atomic percentage of titanium (Ti) contained in the first secondary phase crystal grains is 0.4 to 1.

5.

7. 2. The multilayer electronic component according to claim 1, wherein an average atomic percentage of the rare earth element contained in the first secondary phase crystal grains is 10 at % or more and 25 at % or less.

8. 2. The multilayer electronic component according to claim 1, wherein an average atomic percentage of titanium (Ti) contained in the first secondary phase crystal grains is more than 15 at % and not more than 20 at %.

9. 2. The multilayer electronic component according to claim 1, wherein the first secondary phase crystal grains further contain barium (Ba), and an average atomic percentage of barium (Ba) contained in the first secondary phase crystal grains is 0.01 at% or more and 6 at% or less.

10. 2. The laminated electronic component according to claim 1, wherein the first secondary phase crystal grains further contain silicon (Si), and an average atomic percentage of silicon (Si) contained in the first secondary phase crystal grains is 0.05 at% or more and 1.0 at% or less.

11. 2. The multilayer electronic component according to claim 1, wherein a ratio of an average atomic percentage of rare earth elements to an average atomic percentage of silicon (Si) contained in the second secondary phase crystal grains is 0.5 to 2.

0.

12. 2. The multilayer electronic component according to claim 1, wherein an average atomic percentage of the rare earth element contained in the second secondary phase crystal grains is 20 at % or more and 25 at % or less.

13. 2. The multilayer electronic component according to claim 1, wherein an average atomic percentage of silicon (Si) contained in the second secondary phase crystal grains is 10 at % or more and 15 at % or less.

14. 2. The multilayer electronic component according to claim 1, wherein the second secondary phase crystal grains further contain barium (Ba), and an average atomic percentage of the barium (Ba) contained in the second secondary phase crystal grains is 1 at% or more and 5 at% or less.

15. 2. The multilayer electronic component according to claim 1, wherein the second secondary phase crystal grains further contain titanium (Ti), and an average atomic percentage of titanium (Ti) contained in the second secondary phase crystal grains is 0.1 at% or more and 1.0 at% or less.

16. 2. The laminated electronic component according to claim 1, wherein the dielectric layer includes dielectric crystal grains having a core-shell structure containing a rare earth element, the average atomic percentage of the rare earth element in the core being greater than 0 at% and less than 0.5 at%, and the average atomic percentage of the rare earth element in the shell being 0.5 at% or more and less than 2.0 at%.

17. The dielectric layer is made of barium titanate (BaTiO ３ 2. The multilayer electronic component according to claim 1, comprising a polyimide-based main component.

18. 18. The laminated electronic component according to claim 17, wherein the dielectric layer further includes a first minor component element, the first minor component element being a variable valence acceptor element, and the number of moles of the first minor component element per 100 moles of titanium (Ti) contained in the dielectric layer is 0.3 moles or more and 0.5 moles or less.

19. 19. The multilayer electronic component according to claim 18, wherein the variable valence acceptor element is at least one of manganese (Mn), vanadium (V), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), and zinc (Zn).

20. 18. The laminated electronic component according to claim 17, wherein the dielectric layer further includes a first minor component element, the first minor component element being a variable valence acceptor element, the variable valence acceptor element being manganese (Mn) and vanadium (V), and the number of moles of the first minor component element per 100 moles of titanium (Ti) contained in the dielectric layer is 0.3 moles or more and 0.5 moles or less.

21. 18. The multilayer electronic component according to claim 17, wherein the dielectric layer further includes a second minor component element, the second minor component element being magnesium (Mg), and the number of moles of the second minor component element per 100 moles of titanium (Ti) included in the dielectric layer is 0.3 moles or more and 0.5 moles or less.

22. 18. The multilayer electronic component according to claim 17, wherein the dielectric layer further includes a third minor component element, the third minor component element being the rare earth element, and the number of moles of the third minor component element per 100 moles of titanium (Ti) contained in the dielectric layer is 3.5 moles or more and 5.5 moles or less.

23. 18. The multilayer electronic component according to claim 17, wherein the dielectric layer further includes a fourth minor component element, the fourth minor component element being at least one of barium (Ba) and calcium (Ca), and a mole number of the fourth minor component element per 100 moles of titanium (Ti) included in the dielectric layer is 1 mole or more and 1.5 moles or less.

24. 18. The laminated electronic component according to claim 17, wherein the dielectric layer further includes a fifth minor component element, the fifth minor component element being silicon (Si), and the number of moles of the fifth minor component element per 100 moles of titanium (Ti) contained in the dielectric layer is 1.1 moles or more and 3 moles or less.

25. a main body including a capacitance forming portion including a dielectric layer and an internal electrode; an external electrode disposed on the body; When the secondary phase crystal grains containing a rare earth element and titanium (Ti) are defined as first secondary phase crystal grains, the secondary phase crystal grains containing the rare earth element and silicon (Si) are defined as second secondary phase crystal grains, the number of the first secondary phase crystal grains contained in the capacitance forming portion is defined as A, and the number of the second secondary phase crystal grains contained in the capacitance forming portion is defined as B, The capacitance forming portion satisfies 0<A and 0<B.

26. 26. The multilayer electronic component according to claim 25, wherein the capacitance forming portion satisfies 0<A<B.

27. 27. The multilayer electronic component according to claim 26, wherein the capacitance forming portion has a cross-sectional area of ​​1.85 μm×1.85 μm that satisfies the condition 0<A<B.

28. 28. The multilayer electronic component according to claim 27, wherein the cross-sectional area of ​​1.85 μm×1.85 μm that satisfies the condition 0<A<B satisfies 5≦A+B<20.

29. 26. The multilayer electronic component according to claim 25, wherein the rare earth element includes at least one of lanthanum (La), samarium (Sm), dysprosium (Dy), terbium (Tb), holmium (Ho), erbium (Er), and gadolinium (Gd).

30. 26. The multilayer electronic component according to claim 25, wherein the rare earth elements do not include at least one of ytterbium (Yb) and yttrium (Y).

31. 26. The multilayer electronic component according to claim 25, wherein a ratio of an average atomic percentage of rare earth elements to an average atomic percentage of titanium (Ti) contained in the first secondary phase crystal grains is 0.4 to 1.

5.

32. 26. The multilayer electronic component according to claim 25, wherein an average atomic percentage of the rare earth element contained in the first secondary phase crystal grains is 10 at % or more and 25 at % or less.

33. 26. The multilayer electronic component according to claim 25, wherein an average atomic percentage of titanium (Ti) contained in the first secondary phase crystal grains is more than 15 at % and not more than 20 at %.

34. 26. The multilayer electronic component according to claim 25, wherein the first secondary phase crystal grains further contain barium (Ba), and an average atomic percentage of barium (Ba) contained in the first secondary phase crystal grains is 0.01 at% or more and 6 at% or less.

35. 26. The laminated electronic component according to claim 25, wherein the first secondary phase crystal grains further contain silicon (Si), and an average atomic percentage of silicon (Si) contained in the first secondary phase crystal grains is 0.05 at% or more and 1.0 at% or less.

36. 26. The multilayer electronic component according to claim 25, wherein a ratio of an average atomic percentage of rare earth elements to an atomic percentage of silicon (Si) contained in the second secondary phase crystal grains is 0.5 to 2.

0.

37. 26. The multilayer electronic component according to claim 25, wherein an average atomic percentage of the rare earth element contained in the second secondary phase crystal grains is 20 at % or more and 25 at % or less.

38. 26. The multilayer electronic component according to claim 25, wherein an average atomic percentage of silicon (Si) contained in the second secondary phase crystal grains is 10 at % or more and 15 at % or less.

39. 26. The multilayer electronic component according to claim 25, wherein the second secondary phase crystal grains further contain barium (Ba), and an average atomic percentage of barium (Ba) contained in the second secondary phase crystal grains is 1 at% or more and 5 at% or less.

40. 26. The laminated electronic component according to claim 25, wherein the second secondary phase crystal grains further contain titanium (Ti), and an average atomic percentage of titanium (Ti) contained in the second secondary phase crystal grains is 0.1 at% or more and 1.0 at% or less.

41. The laminated electronic component according to claim 25, wherein the dielectric layer includes dielectric crystal grains having a core-shell structure containing a rare earth element, the average atomic percentage of the rare earth element in the core is greater than 0 at% and less than 0.5 at%, and the average atomic percentage of the rare earth element in the shell is 0.5 at% or more and less than 2.0 at%.

42. The dielectric layer is made of barium titanate (BaTiO ３ 26. The multilayer electronic component according to claim 25, comprising a polyimide-based main component.

43. 43. The laminated electronic component according to claim 42, wherein the dielectric layer further includes a first minor component element, the first minor component element being a variable valence acceptor element, and the number of moles of the first minor component element per 100 moles of titanium (Ti) contained in the dielectric layer is 0.3 moles or more and 0.5 moles or less.

44. 44. The laminated electronic component according to claim 43, wherein the variable valence acceptor element is at least one of manganese (Mn), vanadium (V), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), and zinc (Zn).

45. 43. The laminated electronic component according to claim 42, wherein the dielectric layer further includes a first minor component element, the first minor component element being a variable valence acceptor element, the variable valence acceptor element being manganese (Mn) and vanadium (V), and the number of moles of the first minor component element per 100 moles of titanium (Ti) contained in the dielectric layer is 0.3 moles or more and 0.5 moles or less.

46. 43. The multilayer electronic component according to claim 42, wherein the dielectric layer further includes a second minor component element, the second minor component element being magnesium (Mg), and the number of moles of the second minor component element per 100 moles of titanium (Ti) included in the dielectric layer is 0.3 moles or more and 0.5 moles or less.

47. 43. The laminated electronic component according to claim 42, wherein the dielectric layer further includes a third minor component element, the third minor component element being the rare earth element, and the number of moles of the third minor component element per 100 moles of titanium (Ti) contained in the dielectric layer is 3.5 moles or more and 5.5 moles or less.

48. 43. The multilayer electronic component according to claim 42, wherein the dielectric layer further includes a fourth minor component element, the fourth minor component element being at least one of barium (Ba) and calcium (Ca), and the number of moles of the fourth minor component element per 100 moles of titanium (Ti) included in the dielectric layer is 1 mole or more and 1.5 moles or less.

49. 43. The laminated electronic component according to claim 42, wherein the dielectric layer further includes a fifth minor component element, the fifth minor component element being silicon (Si), and the number of moles of the fifth minor component element per 100 moles of titanium (Ti) contained in the dielectric layer is 1.1 moles or more and 3 moles or less.

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