Substrate processing apparatus, method for processing substrate, and method for manufacturing article

Abstract

To provide a technology that is advantageous for forming a film.SOLUTION: A method for processing a substrate includes a step of exposing a solution containing a liquid of a first solvent and disposed on a substrate to a supply gas containing a gas of a second solvent having a saturation vapor pressure that is lower than that of the first solvent at 25°C to regulate liquid physical property of the solution.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a method for manufacturing an article.

Background Art

[0002] When manufacturing an article such as a panel (organic EL panel) having an OLED (Organic Light Emitting Diode) which is an organic EL (Electro Luminescence) element, a method of applying a solution (ink) to a desired location on a substrate using an application device is known. By applying the solution to the substrate, a solution film is formed on the substrate. The solution film composed of the solution is a film containing a solute and a solvent. Through a drying process of drying the solution film applied on the substrate, a film (layer) such as a functional film is formed on the substrate. A drying device is used for drying the solution film.

[0003] On the other hand, Patent Document 1 discloses that a solution film containing cyclohexanone as a solvent is applied to a substrate. And Patent Document 1 discloses that in order to suppress the drying of the solution film, that is, to suppress the volatilization of the solvent contained in the solution film, the atmosphere in the vicinity of the solution film is filled with the vapor of PEGMIA (propylene glycol monomethyl ether acetate) as a solvent vapor. The saturated vapor pressure of PEGMIA is 500 Pa, and the saturated vapor pressure of cyclohexanone is 450 Pa. That is, Patent Document 1 discloses that the atmosphere in the vicinity of the solution film is filled with the vapor of a solvent having a saturated vapor pressure higher than that of the solvent contained in the solution film.

[0004] Further, Patent Document 2 discloses that the atmosphere in the vicinity of the solution film is filled with the vapor of the same solvent as the main solvent contained in the solution film.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

[0006] In recent years, films formed on substrates have been required to be miniaturized, and high uniformity in film thickness has been required for miniaturizing the films.

[0007] The present disclosure aims to provide a technique advantageous for film formation. [Means for Solving the Problems]

[0008] A first aspect of the present disclosure is a substrate processing method, comprising a step of exposing a solution containing a liquid of a first solvent disposed on a substrate to a supply gas containing a gas of a second solvent having a lower saturated vapor pressure at 25 °C than the first solvent to adjust the liquid physical properties of the solution. The substrate processing method is characterized by this.

[0009] A second aspect of the present disclosure is a substrate processing apparatus, comprising a container in which a substrate on which a solution containing a liquid of a first solvent is disposed is conveyed, and a gas supply unit that supplies a supply gas containing a gas of a second solvent having a lower saturated vapor pressure at 25 °C than the first solvent into the container. The substrate processing apparatus is characterized by this. [Advantages of the Invention]

[0010] According to the present disclosure, a technique advantageous for film formation is provided. [Brief Description of the Drawings]

[0011]

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Embodiments for Carrying Out the Invention

[0012] In recent years, high-definition has been progressing in the pixels of displays included in smartphones, tablet terminals, etc. In the organic EL elements included in the pixels, high uniformity is required in the film thickness of the functional film which is an organic film. However, with the miniaturization of pixels, in the functional film formed on the substrate through a drying process for drying the solution film, there has been a phenomenon where the solute remains thickly on the outer periphery in a ring shape, i.e., the so-called coffee ring phenomenon. As a result of intensive research, the present inventors have found that there is a correlation between the coffee ring phenomenon and the liquid physical properties of the solution film.

[0013] FIG. 1 is an explanatory diagram of the phenomenon in which film thickness unevenness occurs in the dried film F1X obtained by drying the solution film F0 according to the comparative example. The solution film F0 is composed of a solution, i.e., ink IK. The ink IK is applied to the recess R on the substrate S using, for example, an inkjet head. By drying the solution film F0, the dried film F1X is formed. Then, if necessary, a functional film is formed by subjecting the substrate to a process such as a firing process.

[0014] The present inventors considered that there are two factors as the factors causing coffee ring in the dried film F1X in the recess R. The first factor is the phenomenon of Marangoni convection occurring inside the solution film F0, and the second factor is the phenomenon of the ink IK wetting up the side wall surface of the bank defining the recess R.

[0015] The result of examining the factor causing coffee ring due to Marangoni convection will be described. As shown in FIG. 1, when the ink IK (droplet) is applied to the recess R, the ink IK bulges compared to the peripheral area. Since the solvent evaporates during the drying process, the concentration of the solute increases near the outer surface of the solution film F0. Then, in the solution film F0, Marangoni convection, which is a flow that draws the ink IK from the center of the solution film F0 toward the outer peripheral direction, occurs. When Marangoni convection acts strongly, coffee ring occurs in the dried film F1X formed by drying the ink IK, where the solute remains thickly on the outer periphery of the recess R in a ring shape.

[0016] The factors causing coffee ring formation due to the phenomenon of ink IK wetting up the side wall surface of the bank will be described based on the results of an investigation. As shown in FIG. 1, when ink IK (droplets) is applied to the recess R, the ink IK bulges compared to the surrounding area. When the solvent evaporates during the drying process, due to surface tension, the phenomenon occurs where the ink IK wets up the side wall surface of the bank. This is a phenomenon related to the wettability (receding contact angle) of the ink IK with respect to the side wall surface of the bank. Thus, coffee ring formation occurs in the dry film F1X when the ink IK dries in the state of wetting up the side wall surface of the bank.

[0017] The inventors of the present invention have found that the occurrence of coffee ring formation in the dry film, that is, the functional film, is correlated with the liquid physical properties of the solution film to be dried. And it was considered that in order to reduce the occurrence of coffee ring formation, the liquid physical properties of the solution film to be dried should be adjusted. The liquid physical properties of the solution film are, for example, viscosity or surface tension.

[0018] However, when applying ink IK to the recess R of the substrate S by the inkjet method, it is necessary to stably eject a trace amount of ink IK at the pl level from the nozzle of the inkjet head. For this reason, there are also restrictions on the adjustment of the liquid physical properties of the ink IK ejected from the nozzle, and the liquid physical properties cannot be freely adjusted. Therefore, the inventors of the present invention have derived that after applying the solution film F0 to the substrate S, the liquid physical properties of the solution film F0 on the substrate S should be adjusted. That is, by adjusting the liquid physical properties of the solution film F0, it was derived that the phenomenon of Marangoni convection can be alleviated or the phenomenon of the ink IK wetting up the side wall surface of the bank can be alleviated.

[0019] Hereinafter, preferred embodiments of the present invention will be described in detail based on the accompanying drawings. In each figure, the same members are denoted by the same reference numerals, and redundant explanations are omitted.

[0020] <First Embodiment> FIG. 2(a) is a schematic diagram showing the configuration of a manufacturing system 1000, which is an example of a system according to the first embodiment. FIG. 2(b) is a schematic plan view of a substrate S processed in the manufacturing system 1000.

[0021] In the following description, in order to clarify the positional relationship, a rectangular coordinate system of an X-axis direction, a Y-axis direction, and a Z-axis direction that are orthogonal to each other is defined. The plus direction of the Z-axis is the vertically upward direction. That is, the minus direction of the Z-axis is the direction of gravity. The manufacturing system 1000 is a system for manufacturing an article used for a display device. The article is, for example, an article in which an organic film is formed on a substrate S. The manufacturing system 1000 includes, for example, a film forming apparatus that forms an organic film on the substrate S.

[0022] The substrate S is a large substrate, for example, an 8.5-generation (2 m × 2 m) glass substrate. By dividing the substrate S into six equal parts, for example, six 55-inch panels are manufactured.

[0023] FIG. 2(c) is a schematic cross-sectional view of a subpixel according to the first embodiment. One pixel in the panel is composed of three subpixels of RGB. One of the three subpixels is shown in FIG. 2(c). In addition, in FIG. 2(c), one organic film F2 among a plurality of organic films included in one subpixel is schematically shown. Each organic film is a functional film.

[0024] In each subpixel, the organic film F2 is formed in a recess R defined by a bank. The organic film F2 can be, for example, any one of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer of an organic EL element (OLED). In the process of manufacturing an organic EL element, organic films such as a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer are formed. The step of forming each organic film may include a step of applying a solution containing a functional material as a solute onto the substrate S to form a solution film made of the solution on the substrate S.

[0025] The step of forming the organic film F2 on the substrate S may include a coating step of disposing or coating a solution film on the substrate S, for example, by an inkjet method, a liquid physical property adjustment step of adjusting the liquid physical properties of the coated solution film, a drying step of drying the adjusted solution film to form a dry film, and a firing step of firing the dry film.

[0026] The solution film is composed of a solution containing a solute for forming the organic film F2 and at least one solvent (liquid). Hereinafter, the solution is also referred to as ink. The solvent may have a property that evaporation is promoted in a reduced pressure environment lower than atmospheric pressure (1 atm). The evaporation of the solvent can be promoted, for example, at a temperature higher than room temperature (25°C).

[0027] The manufacturing system 1000 shown in Fig. 2(a) includes a plurality of processing apparatuses for performing some processing on the substrate S and a transfer robot 9 which is an example of a transfer apparatus configured to be able to transfer the substrate between the plurality of processing apparatuses. Each processing apparatus may include a container (processing chamber). The manufacturing system 1000 includes containers (transfer chambers) 11 connected to the processing chambers of the plurality of processing apparatuses, and the transfer robot 9 may be disposed in the transfer chambers 11. The transfer chambers 11 may be disposed so as to be surrounded by the processing chambers of the plurality of processing apparatuses. The manufacturing system 1000 may be a manufacturing system of a multi-chamber type article.

[0028] In one example, the plurality of processing apparatuses include a coating apparatus 1 that coats the substrate S with a solution film by supplying ink to the substrate S by an inkjet method, a substrate processing apparatus 10 that adjusts the liquid physical properties of the solution film coated on the substrate S by the coating apparatus 1, and a drying apparatus 4 that dries the solution film whose liquid physical properties have been adjusted. Further, the plurality of processing apparatuses may include a load lock apparatus 2, an unload lock apparatus 3, a processing apparatus 5, a processing apparatus 6, a processing apparatus 7, and a processing apparatus 8.

[0029] The load lock device 2 is used as an interface for transporting the substrate S from the outside of the manufacturing system 1000 to the inside of the manufacturing system 1000. The unload lock device 3 is configured as an interface for transporting the substrate whose processing in the manufacturing system 1000 has been completed from the manufacturing system 1000 to the outside. The load lock device 2 and the unload lock device 3 may be configured as one device shared for loading and unloading.

[0030] The drying device 4 is configured to form a dry film by performing a drying process for drying the solution film disposed on the substrate S. In the first embodiment, the drying device 4 is a vacuum drying device having a decompression mechanism, and the pressure of the processing chamber in which the substrate S is transported is reduced below atmospheric pressure to dry the solution film on the substrate S. The processing devices 5 to 8 may include processing chambers that perform various processes according to the device characteristics such as cooling and alignment. Note that the number of processing devices is not limited to the illustrated example and may increase or decrease.

[0031] The transfer robot 9 is configured to hold the substrate S, carry the substrate S from the coating device 1 via the substrate processing device 10 into any of the processing chambers, and carry out the substrate S from the processing chamber.

[0032] The transfer robot 9 includes a robot arm 91 capable of holding the substrate S. The robot arm 91 includes, for example, a link that can advance and retreat in a linear direction. The robot arm 91 holds the substrate S by supporting the substrate S from below with the link. The transfer robot 9 carries the substrate S from the coating device 1 via the substrate processing device 10 along a straight path to the transfer chamber 11, and in the transfer chamber 11, for example, after changing the orientation of the substrate S toward any of the processing chambers by a rotational operation, the substrate S can be directly carried into the processing chamber. When the substrate processing device 10 processes the substrate S, the transfer robot 9 temporarily stops the transfer of the substrate S in the substrate processing device 10. In this state, the substrate processing device 10 processes the substrate S. After the processing is completed, the transfer robot 9 transfers the substrate S to the next process, that is, the drying device 4.

[0033] In the first embodiment, a substrate processing apparatus 10 is provided between the coating apparatus 1 and the transfer chamber 11. The substrate processing apparatus 10 is an apparatus that performs a process of adjusting the physical properties of a solution film disposed on a substrate S. The substrate processing apparatus 10 includes a container (processing chamber) 101. In the first embodiment, the transfer robot 9 is configured to directly transfer the substrate S coated with ink in the coating apparatus 1 to the transfer chamber 11 via the container (processing chamber) 101 of the substrate processing apparatus 10.

[0034] The manufacturing system 1000 further includes a control device 20. The control device 20 is an example of a control unit and may be configured by hardware such as an FPGA (Field Programmable Gate Array). Note that the control device 20 may be configured by a PLD (Programmable Logic Device) or an ASIC (Application Specific Integrated Circuit). Alternatively, the control device 20 may be configured by a general-purpose or dedicated computer in which a program (software) is incorporated, or may be configured by a combination of all or part of the above-described configuration and a computer.

[0035] The control device 20 can include a CPU, an I / O port, and a computer-readable recording medium. As the computer-readable recording medium, a non-transitory recording medium that stores a processing program executed by the CPU, parameters necessary for the execution of the process, and the like can be used. As the non-transitory recording medium, for example, a flexible disk, an optical disk, a magneto-optical disk, a magnetic tape, a USB memory, an SSD, or the like can be used. Further, the control device 20 can include a rewritable storage medium (such as a RAM) that provides a recording area necessary for processes such as arithmetic operations.

[0036] The control device 20 controls the operations of each part of the manufacturing system 1000 including the transfer robot 9 and the substrate processing device 10. A computer-readable non-transitory recording medium included in the control device 20 records programs for performing the transfer operation according to the present embodiment and for manufacturing a substrate for an organic EL display device by the manufacturing system 1000.

[0037] FIG. 3 is an explanatory diagram of the substrate processing device 10 according to the first embodiment. In FIG. 3, a cross section of the substrate processing device 10 is schematically illustrated. The substrate processing device 10 includes a container (chamber) 101 that defines a processing space, and a supply unit 110 that supplies solvent vapor G2, which is a gas of the solvent L2, to the processing space that is the internal space of the container 101. The supply unit 110 is an example of a gas supply unit. The container 101 can be an airtight container that can communicate with other containers (chambers). The container 101 is configured to prevent the solvent vapor G2 supplied by the supply unit 110 from scattering outside the container 101.

[0038] A solution film F0 is disposed on the substrate S. In the first embodiment, the solution film F0 is disposed in the concave portion R of the substrate S. Inside the container 101, the substrate S on which the solution film F0 is disposed can be transported by the transfer robot 9. Then, inside the container 101, the solution film F0 disposed on the substrate S is exposed to a supply gas G20 containing the solvent vapor G2 supplied into the container 101, whereby the liquid physical properties of the solution film F0 are adjusted.

[0039] Note that the supply unit 110 may be mounted on the coating device 1 or the drying device 4, may be mounted on any one of the processing devices 5 to 8, or may be mounted on the transfer chamber 11.

[0040] Inside the container 101, the substrate S on which the solution film F0 is coated by the coating device 1 is transported by the transfer robot 9. The solution film F0 coated on the substrate S is processed by the solvent vapor G2 supplied into the container 101 by the supply unit 110.

[0041] The solution film F0 can be formed by applying the ink IK onto the substrate S. The ink IK is a solution containing a solvent L1 and a solute for forming the organic film F2. In the solution film F0, the solvent L1 exists as a liquid. The solution film F0 is composed of the ink IK. That is, the solution film F0 contains the solvent L1 and the solute. Here, the solvent L1 is an example of the first solvent, and the solvent L2 is an example of the second solvent.

[0042] FIG. 4 is a flowchart of a method for manufacturing an article including the substrate processing method according to the first embodiment. FIG. 5 is an explanatory diagram of a method for manufacturing an article including the substrate processing method according to the first embodiment. When the substrate S is loaded inside the manufacturing system 1000, the control device 20 is instructed to start substrate processing of the substrate S.

[0043] In step (pretreatment step) S1, the control device 20 causes the transfer robot 9 to transfer the substrate S to a processing device that performs the substrate pretreatment step among the processing devices 5 to 8. The organic EL element is vulnerable to organic substances and moisture. Therefore, in this processing device, the substrate S is mainly subjected to pretreatment such as dry cleaning, for example, dehumidification baking or UV light cleaning. Thereby, organic substances and moisture are removed from the surface of the substrate S, and the wettability of the substrate S with respect to the ink IK applied to the surface is adjusted.

[0044] In step (coating step) S2, the control device 20 causes the transfer robot 9 to transfer the substrate S to the coating device 1. Then, the coating device 1 disposes the solution film F0 on the substrate S by applying the ink IK onto the substrate S. When the ink IK is applied onto the substrate S in the coating device 1, the solution film F0 is formed on the substrate S.

[0045] The solution film F0 may be formed over the entire main surface of the substrate S, but in the first embodiment, it is formed in the fine recesses R. That is, by supplying the ink IK to the recesses R, the solution film F0 is formed in the recesses R. The recesses R are areas surrounded by banks as described above. The method by which the coating apparatus 1 supplies the ink IK to the substrate S is preferably an inkjet method. By the inkjet method, the ink IK is ejected from the nozzles of the inkjet head toward the recesses R, and the ink IK is dropped into the recesses R. The ink IK contains a solvent L1. As the solvent L1, a solvent of a type that allows the ink IK to be ejected from the nozzles is selected.

[0046] Note that in the first embodiment, the coating method is the inkjet method, but it is not limited to this method. The coating method can be, for example, a slit coating method, a spin coating method, a spray coating method, a screen printing method, or a dispenser method.

[0047] Next, in step S3 (liquid physical property adjustment step), the control device 20 causes the transfer robot 9 to transfer the substrate S to the container 101 of the substrate processing device 10. The solution film F0 is disposed on the substrate S transferred to the container 101. The control device 20 controls the supply unit 110 so as to blow a supply gas G20 containing the solvent vapor G2 for adjusting the liquid physical properties of the solution film F0 into the container 101.

[0048] Thereby, the atmosphere around the substrate S is replaced with the supply gas G20 containing the solvent vapor G2, and the solution film F0 disposed on the substrate S is exposed to the supply gas G20 containing the solvent vapor G2. Among the supplied supply gas G20, the component of the solvent vapor G2 is gradually taken into the solution film F0 on the substrate S, and the liquid physical properties of the solution film F0 change. That is, by taking in the solvent L2, the solution film F0 is adjusted to the solution film F0'. The solvent L2 is an example of a second solvent. The solvent vapor G2 is a gas of the solvent L2. In this way, in the liquid physical property adjustment step S3, the liquid physical properties of the solution film F0 are adjusted, whereby the solution film F0' is generated. In the solution film F0', the solvent L2 is taken in as a liquid.

[0049] In step S4, the control device 20 determines whether or not the processing of the liquid physical property adjustment step S3 has been completed. If the processing of the liquid physical property adjustment step S3 has not been completed, that is, if step S4 is NO, the control device 20 continues the liquid physical property adjustment step S3. When the processing of the liquid physical property adjustment step S3 is completed, that is, when step S4 is YES, the control device 20 stops the supply of the solvent vapor G2 to the supply unit 110 and proceeds to the next step S5.

[0050] In step (drying step) S5, the control device 20 causes the transfer robot 9 to transfer the substrate S to the drying device 4. On the substrate S transferred to the drying device 4 by the transfer robot 9, a solution film F0' processed in the liquid physical property adjustment step S3 is disposed. The drying device 4 dries the solution film F0' on the substrate S at a pressure, time, and temperature determined based on the composition of the solution film F0' and the like. Thereby, a dry film F1 is formed in the concave portion R of the substrate S.

[0051] Next, in step (firing step) S6, the control device 20 causes the transfer robot 9 to transfer the substrate S to any one of the processing devices 5 to 8. Then, in the firing step S6, the processing device performs a firing process for firing the dry film F1, and forms an organic film F2 in the concave portion R of the substrate S. Thus, the processing of the substrate S is completed, and the substrate S is unloaded from the manufacturing system 1000 to the outside.

[0052] Note that the liquid physical property adjustment step S3 is preferably performed before the drying step S5, but may be performed during the drying step S5 in the drying device 4. That is, the supply unit 110 may be provided in the coating device 1, may be provided in the drying device 4, may be provided in any one of the other processing devices 5 to 8, or may be provided in the transfer chamber 11. And the liquid physical property adjustment step S3 may be performed after the completion of the coating step S2 and before the completion of the drying step S5.

[0053] Here, it takes a certain amount of time to adjust the liquid physical properties of the solution film F0 by the solvent vapor G2. For this reason, the supply unit 110 is preferably mounted on a unit with a margin in processing time while achieving a tact balance from the coating step S2 to the drying step S5. That is, the supply unit 110 is preferably mounted on the substrate processing apparatus 10 between the coating apparatus 1 and the transfer chamber 11 in the first embodiment. And it is preferable that the liquid physical property adjustment step S3 is performed after the end of the coating step S2 and before the start of the drying step S5.

[0054] Also, the supply unit 110 is preferably provided in the transfer path from the coating apparatus 1 to the drying apparatus 4. In this embodiment, it is provided in the container 101 between the coating apparatus 1 and the transfer chamber 11. Thereby, space saving is realized.

[0055] The step of adjusting the liquid physical properties of the solution film F0 will be specifically described. The liquid physical properties of the solution film F0 are viscosity or surface tension. In the first embodiment, the solvent vapor G2 is applied to the solution film F0 to dissolve the solvent L2 in the solution film F0, adjust the liquid physical properties of the solution film F0, and obtain the solution film F0'.

[0056] On the other hand, exposing the substrate to solvent vapor is also disclosed in Patent Document 1 and Patent Document 2. However, in Patent Document 1, the solvent contained in the solution film is cyclohexanone, and the solvent vapor is the vapor of PEGMIA (propylene glycol monomethyl ether acetate). PEGMIA has a higher saturated vapor pressure than cyclohexanone.

[0057] When the solvent of the solvent vapor has a higher saturated vapor pressure than the solvent contained in the solution film, the liquid physical properties of the solution film cannot be adjusted. This is because PEGMIA has a higher saturated vapor pressure than cyclohexanone contained in the solution film, so it is easier to dry than cyclohexanone contained in the solution film and difficult to be taken into the solution film.

[0058] Note that since the solvent of the solvent vapor disclosed in Patent Document 2 is of the same type as the solvent contained in the solution film, it is not possible to adjust the liquid physical properties of the solution film F0.

[0059] In the first embodiment, in the liquid physical property adjustment step S3, the solution film F0 disposed on the substrate S is exposed to a supply gas G20 containing a gas of a solvent L2 (i.e., solvent vapor G2) having a lower saturation vapor pressure at room temperature (25 ° C) than the solvent L1, to adjust the liquid physical properties of the solution film F0 and obtain an adjusted solution film F0'. The solvent L2 having a lower saturation vapor pressure than the solvent L1 is incorporated into the solution film F0'. The solvent L2 is a solvent of a different type from the solvent L1. Note that the saturation vapor pressure of the solvent L2 is lower than the saturation vapor pressure of the solvent L1 at any temperature within the range of 20 ° C or higher and 25 ° C or lower.

[0060] The solvent L2 may be selected according to which of the phenomenon of Marangoni convection occurring and the phenomenon of the ink IK wetting up the side wall surface of the bank is dominant as a factor causing coffee ring formation. If the phenomenon of Marangoni convection occurring is dominant, it is advantageous to adjust the viscosity as the liquid physical property, and if the phenomenon of the ink IK wetting up the side wall surface of the bank is dominant, it is advantageous to adjust the surface tension as the liquid physical property.

[0061] Therefore, the solvent L2 may be selected so that the desired liquid physical properties are obtained in the solution film F0'. For example, the solvent L2 may be selected so that the viscosity of the solution film F0' becomes higher than the viscosity of the solution film F0, or the surface tension of the solution film F0' becomes lower than the surface tension of the solution film F0.

[0062] When the viscosity of the solution film F0' is increased, the flow of the ink in the solution film F0' is suppressed and the Marangoni convection is alleviated. Also, when the surface tension of the solution film F0' is decreased, the wetting up of the ink on the side wall surface of the bank is alleviated.

[0063] The solvent L1 preferably contains at least one organic solvent having solubility for the solute. Examples of the organic solvent include, but are not limited to, cyclohexanone, N-methylformamide, N-methylpyrrolidone, and the like.

[0064] The solvent L2 used to obtain the high-viscosity solution film F0' preferably contains at least one organic solvent. That is, the viscosity of the solvent L2 is preferably higher than that of the solvent L1. At this time, examples of the at least one organic solvent contained in the solvent L2 include, but are not limited to, cyclohexanol, ethylene glycol, ethylene glycol diglycidyl ether, 1,3-octylene glycol, diethylene glycol, dipropylene glycol, triethylene glycol, tripropylene glycol, 1,3-butanediol, 2,3-butanediol, 1,4-butanediol, propylene glycol, hexylene glycol, propylene glycol diacetate, 3-methoxybutanol, and the like.

[0065] The solvent L2 used to obtain the low surface tension solution film F0' preferably contains at least one organic solvent. That is, the surface tension of the solvent L2 is preferably lower than that of the solvent L1. At this time, examples of the at least one organic solvent contained in the solvent L2 include, but are not limited to, ethylene glycol monobutyl ether, diethylene glycol diethyl ether, diethylene glycol dimethyl ether, ethylene glycol diethyl ether, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether, dipropylene glycol methyl ether acetate, 3-methoxybutyl acetate, diethylene glycol monoethyl ether, diacetone alcohol, γ-butyrolactone, ethyl lactate (ethyl lactate), n-hexyl acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, and the like.

[0066] As described above, a solvent that is advantageous for liquid physical properties may be selected as the solvent L2 according to the saturated vapor pressure, viscosity, surface tension, etc. of the solvent L1 contained in the solution film F0.

[0067] Note that the solvent contained in the ink IK is not limited to one type of the solvent L1, and at least one type of solvent different from the solvent L1 may be further contained in order to adjust various properties of the ink IK. That is, the ink IK may contain a plurality of types of solvents. In this case, the solvent L2 may be selected from among the plurality of types of solvents contained in the ink IK, at least from a solvent having a saturated vapor pressure lower than that of the solvent L1.

[0068] FIG. 6 is an explanatory diagram of the supply unit 110 according to the first embodiment. In FIG. 6, a cross section of the supply unit 110 is schematically illustrated. In the first embodiment, the supply unit 110 is configured to supply, as the supply gas G20, a mixed gas of the solvent vapor G2 and the carrier gas G1 to the internal space of the container 101 in which the substrate S is disposed.

[0069] Further, in the first embodiment, the supply unit 110 is configured to selectively supply either the supply gas G20 containing the solvent vapor G2 or the purge gas G0 not containing the solvent vapor to the internal space of the container 101.

[0070] The supply unit 110 includes a flow rate adjustment mechanism 21, a temperature adjustment mechanism 29, a solvent container 22, a temperature adjustment mechanism 23, a check valve 24, a three-way valve 25, a gas flow rate adjustment mechanism 31, and a gas temperature adjustment mechanism 32.

[0071] The supply system of the supply gas G20 containing the solvent vapor G2 will be described. A carrier gas G1 for transporting the solvent vapor G2 is introduced into the supply unit 110 from the outside. As the carrier gas G1, an inert gas such as nitrogen or argon is preferable, but a gas having a composition different from that of the solvent of the solution film F0 may be a gas other than the inert gas. For example, the carrier gas G1 may be a gas such as clean dry air (air).

[0072] The carrier gas G1 passes through the flow rate adjusting mechanism 21. The flow rate adjusting mechanism 21 is, for example, a Mass Flow Controller, and can adjust the flow rate (supply amount) of the carrier gas G1.

[0073] The flow rate adjusting mechanism 21 is connected by piping to a solvent container 22 in which the solvent L2 is stored. A temperature adjusting mechanism 29 is arranged in the piping. The temperature adjusting mechanism 29 is, for example, a heater or a cooler, and can adjust the temperature of the carrier gas G1 output from the flow rate adjusting mechanism 21 and supplied to the solvent container 22.

[0074] The carrier gas G1 whose temperature has been adjusted is supplied into the solvent container 22 through the piping and introduced into the liquid (liquid phase) solvent L2 as bubbles 28 of the carrier gas G1. In the process of the bubbles 28 of the carrier gas G1 passing through the solvent L2, the solvent vapor G2 of the solvent L2 is taken into the carrier gas G1 and output as a supply gas (mixed gas) G20 from the piping connected to the solvent container 22.

[0075] Here, a temperature adjusting mechanism 23 is arranged in the solvent container 22. The temperature adjusting mechanism 23 is, for example, a heater or a cooler, and can adjust the temperature of the solvent L2 in the solvent container 22.

[0076] By the temperature adjusting mechanism 29 for adjusting the temperature of the carrier gas G1 and the temperature adjusting mechanism 23 for adjusting the temperature of the solvent L2 in the solvent container 22, the supply amount of the solvent vapor G2 per unit volume in the supply gas G20 containing the solvent vapor G2 and the carrier gas G1 can be adjusted. Also, the supply amount of the carrier gas G1 can be adjusted by the flow rate adjusting mechanism 21.

[0077] As described above, in the first embodiment, the supply gas G20 which is a mixed gas is generated by a bubbling process of sending the carrier gas G1 into the liquid solvent L2. Then, the supply gas G20 containing the solvent vapor G2 and the carrier gas G1 is supplied to the space near the substrate S via the check valve 24 and the three-way valve 25.

[0078] The three-way valve 25 has three ports. A pipe connected to the solvent container 22 is connected to the first port, a pipe connected to the container 101 is connected to the second port, and a pipe through which the purge gas G0 is introduced is connected to the third port.

[0079] The three-way valve 25 is provided in the supply unit 110 for the purpose of switching the gas species supplied to the space near the substrate S. By being switched to the control device 20, either the supply gas G20 or the purge gas G0 can be selectively supplied to the internal space of the container 101. That is, when the three-way valve 25 is set to the first state in which the third port is closed and the first and second ports are open, the supply gas G20 can be supplied to the inside of the container 101. When the first port is closed and the three-way valve 25 is set to the second state in which the third and second ports are open, the purge gas G0 can be supplied to the inside of the container 101.

[0080] The check valve 24 is disposed in the pipe between the three-way valve 25 and the solvent container 22 to prevent the reverse flow of the purge gas G0 to the solvent container 22 side.

[0081] Next, the supply system of the purge gas G0 will be described. The purge gas G0 is supplied to the pipe connected to the third port of the three-way valve 25 of the supply unit 110. When the three-way valve 25 is switched from the first state to the second state by the control device 20, the supply of the supply gas G20 to the inside of the container 101 is stopped, the purge gas G0 is supplied to the inside of the container 101, and the atmosphere in the space near the substrate S disposed inside the container 101 is replaced from the solvent vapor G2 to the purge gas G0. That is, when the purge gas G0 is supplied to the inside of the container 101, the solvent vapor G2 staying near the substrate S is expelled by the purge gas G0, and the atmosphere in the space near the substrate S is replaced by the purge gas G0. Thereby, the supply of the solvent vapor G2 to the solution film F0´ is terminated, and the atmosphere near the substrate S is prepared for the next substrate process, that is, the drying process.

[0082] As the purge gas G0, an inert gas such as nitrogen or argon is preferable, but any gas other than the inert gas may be used as long as it has a composition different from that of the solvent contained in the solution film F0´. For example, the purge gas G0 may be a gas such as clean dry air (air).

[0083] A gas flow rate adjusting mechanism 31 is disposed in a pipe connected to the third port of the three-way valve 25. The gas flow rate adjusting mechanism 31 is, for example, a gas regulator. The supply amount of the purge gas G0 can be adjusted by the gas flow rate adjusting mechanism 31.

[0084] Also, a gas temperature adjusting mechanism 32 is disposed in a pipe connected to the third port of the three-way valve 25. The gas temperature adjusting mechanism 32 is, for example, a heater or a cooler. The temperature of the purge gas G0 supplied in the vicinity of the substrate S can be adjusted by the gas temperature adjusting mechanism 32.

[0085] According to the configuration of the supply unit 110 described above, a supply gas G20, which is a mixed gas of a solvent vapor G2, which is a gas of the solvent L2, and a carrier gas G1, can be generated by a bubbling process. Further, by switching the three-way valve 25, either the supply gas G20 or the purge gas G0 can be selectively supplied to the internal space of the container 101.

[0086] As described above, according to the first embodiment, the physical properties of the solution film F0 are adjusted by supplying the solvent vapor G2 contained in the supply gas G20, which is a mixed gas, around the substrate S. In the first embodiment, the physical properties of the liquid are, for example, viscosity or surface tension. The solvent L2 that becomes the solvent vapor G2 is a solvent that is less volatile than the solvent L1 contained in the ink IK. That is, the solvent L2 has a lower saturated vapor pressure at room temperature (25°C) than the solvent L1 contained in the ink IK. Thus, in the first embodiment, the solvent vapor G2 of the solvent L2, which has a lower saturated vapor pressure at room temperature (25°C) compared to the solvent L1 contained in the solution film F0, is supplied around the substrate S.

[0087] As a result, the solvent L2 is incorporated into the solution film F0, and a solution film F0' with adjusted liquid physical properties is obtained. Therefore, Marangoni convection or the wetting-up of the ink IK can be reduced, and the occurrence of film thickness unevenness in the formed dry film F1, that is, the organic film F2, can be reduced. Thus, according to the first embodiment, a technique advantageous for film formation is provided.

[0088] The supply amount of the solvent L2 contained in the solution film F0' is preferably in the range of 30 vol% or more and 50 vol% or less with respect to the total amount of the solvent L1 contained in the solution film F0'. Within this range, the liquid physical properties of the ink IK contained in the solution film F0' can be effectively shifted, and the film thickness unevenness can be effectively reduced. However, if the solvent L2 is added to the solution film F0' in an amount exceeding 50 vol%, for example, if the viscosity becomes too high, the fluidity of the ink IK may be lost, and the leveling (flattening) performance required for the ink IK may be lost. Also, if the total amount of the solvent in the solution film F0' becomes too large, the drying time may become too long.

[0089] In addition, as a factor causing coffee ring formation, which phenomenon of Marangoni convection occurs or which phenomenon of the ink IK wetting up the side wall surface of the bank is dominant also depends on the size of the concave portion R, that is, the size (ink amount) of the solution film F0. The type of the solvent L2 may be selected according to the size of the concave portion R, that is, the size (ink amount) of the solution film F0.

[0090] For example, when the resolution of the pixels of a 55-inch organic EL panel is 4K, for example, it is preferable to reduce Marangoni convection, and as the solvent L2, a solvent having a higher viscosity than the solvent L1 is preferably used so that the viscosity of the solution film F0' is higher than the viscosity of the solution film F0.

[0091] Further, for example, when the resolution of the pixels of a 55-inch organic EL panel is 8K, it is preferable to reduce the wetting of the side wall surface of the bank by the ink IK. For the solvent L2, it is preferable to use a solvent having a lower surface tension than the solvent L1 so that the surface tension of the solution film F0' is lower than the surface tension of the solution film F0.

[0092] In the above description, the case where the carrier gas G1 is included in the supply gas G20 has been described. However, the carrier gas G1 may be omitted in the supply gas G20. In this case, the supply gas G20 is the solvent vapor G2.

[0093] <Modification Example 1> Modification Example 1 of the first embodiment will be described. In the above first embodiment, the case where the supply gas G20 contains the solvent vapor G2 has been described as an example. However, the supply gas G20 may further contain the gas of the surfactant. That is, by adding the surfactant to the solvent container 22 of the supply unit 110 shown in FIG. 6, the gas of the surfactant is added to the solvent vapor G2 which is the gas of the solvent L2.

[0094] Then, the solvent L2 and the surfactant are incorporated into the solution film F0, and the solution film F0' is formed. In the solution film F0', even if a very small amount (tens of ppm or less) of the surfactant is contained, the surface tension of the solution film F0' is significantly reduced compared to the surface tension of the solution film F0. That is, the solution film F0' contains a mixture in which the surfactant is added to the solvent L1. The surface tension of the mixture is lower than the surface tension of the solvent L1.

[0095] Examples of the surfactant include nonionic surfactants. Examples of the nonionic surfactants include 3,5-dimethyl-1-hexyn-3-ol, 2,4,7,9-tetramethyl-5-decyn-4,7-diol, 3,6-dimethyl-4-octyn-3,6-diol, ethylene oxide adducts of acetylene glycol (e.g., Acetylenol EH; manufactured by Kawaken Fine Chemicals Co., Ltd.), ethylene oxide adducts of acetylene alcohol (e.g., Acetylenol EL; manufactured by Kawaken Fine Chemicals Co., Ltd.), ethylene oxide adducts of acetylene or alkane (e.g., Surfynol 104, 82, 465, 485; manufactured by Air Products), or Tergitol 15-S-5 or Tergitol 15-S-7 (both manufactured by Union Carbide Company).

[0096] In addition, examples of the surfactant include fluorosurfactants. Examples of the fluorosurfactants include surfactants having a fluorine-containing alkyl group as a lipophilic group, such as a structure in which a sulfonyl group is directly bonded to a perfluoroalkyl group as a lipophilic group that imparts leveling performance, and a structure in which a carboxy group is directly bonded to a perfluoroalkyl group. Examples of the surfactants having a fluorine-containing alkyl group as a lipophilic group include perfluoroalkyl sulfonates, perfluoroalkyl ethylene oxide adducts, perfluoroalkyl trimethylammonium salts, perfluoroalkyl aminosulfonates, perfluoroalkyl group-containing hydrophilic group oligomers, perfluoroalkyl group-containing lipophilic group oligomers, perfluoroalkyl group-containing (hydrophilic group and lipophilic group) oligomers, perfluoroalkyl group-containing lipophilic group urethanes, perfluoroalkyl phosphates, perfluoroalkyl carboxylates, perfluoroalkyl amine compounds, perfluoroalkyl quaternary ammonium salts, perfluoroalkyl betaines, non-dissociative perfluoroalkyl compounds, or low molecular weight compounds containing fluorine atoms such as fluorosilicone oil.

[0097] In addition, examples of the surfactant include silane-based surfactants. Examples of silane-based surfactants include low-molecular compounds containing silicon atoms such as dimethyl silicone, diphenyl silicone, hydrogen-modified polysiloxane, vinyl-modified polysiloxane, hydroxy-modified polysiloxane, amino-modified polysiloxane, carboxyl-modified polysiloxane, chloro-modified polysiloxane, epoxy-modified polysiloxane, methacryloxy-modified polysiloxane, mercapto-modified polysiloxane, fluorine-modified polysiloxane, long-chain alkyl-modified polysiloxane, phenyl-modified polysiloxane, and silicone-modified copolymer.

[0098] The added surfactant is more preferably selected from the above nonionic surfactants and fluorine-based surfactants according to the solvent type of the ink IK.

[0099] The solvent L2 is selected so as to be advantageous in terms of liquid physical properties according to the saturated vapor pressure and surface tension of the solvent L1 contained in the solution film F0. At this time, the surfactant can be supplied to the solution film F0 as vapor together with the solvent L2.

[0100] Figure 7 is a table showing physical property values of an example of the solvent L1 which is the first solvent in the first embodiment or its modification 1, physical property values of six examples of the solvent L2 which is the second solvent, and physical property values of an example of the surfactant in the modification 1. In Figure 7, physical property values of three examples of solvents with high viscosity and physical property values of three examples of solvents with low surface tension are shown as the solvent L2. In addition, physical property values of an example of the surfactant are shown as the surfactant. Also, physical property values of an example of the solvent are shown as the solvent L1. It is preferable to use the solvents shown in Figure 7 as the solvents L1 and L2. Also, it is preferable to use the surfactant shown in Figure 7 as the surfactant.

[0101] The saturated vapor pressures of six solvents that can be selected as solvent L2 are lower than those of one solvent that can be selected as solvent L1. Also, the viscosities of three high-viscosity solvents that can be selected as solvent L2 are higher than those of one solvent that can be selected as solvent L1. Further, the surface tensions of three low-surface-tension solvents that can be selected as solvent L2 are lower than those of one solvent that can be selected as solvent L1.

[0102] <Second Embodiment> The second embodiment will be described. Hereinafter, elements denoted by the same reference numerals as those in the first embodiment have substantially the same configuration and operation as those described in the first embodiment unless otherwise specified, and the parts different from the first embodiment will be mainly described.

[0103] FIG. 8(a) is a schematic plan view of a substrate S to be processed in the manufacturing system of the second embodiment. In display production including organic EL panels and the like, the substrate S is getting larger in order to improve productivity. Under such circumstances, in order to achieve multi-variety production according to customer needs, "mixed-flow production" in which panels of a plurality of specifications (pixel size and pixel pitch) are produced on one substrate S is in progress. The substrate S is a large substrate, for example, a glass substrate of 8.5 generations (2 m × 2 m). By dividing the substrate S into six equal parts, for example, six 55-inch panels are manufactured. For example, three of the six panels to be manufactured are panels with a resolution of 4K, and the remaining three are panels with a resolution of 8K. The region A1 of the substrate S corresponds to a panel with a resolution of 4K, and the region A2 of the substrate S corresponds to a panel with a resolution of 8K. The region A1 is an example of the first region, and the region A2 is an example of the second region.

[0104] One pixel in each panel is composed of three sub-pixels of RGB. The configuration of the sub-pixels of each panel is as described in the first embodiment. Here, if the panel sizes are the same, the size of the sub-pixels in a panel with a resolution of 8K is smaller than the size of the sub-pixels in a panel with a resolution of 4K. That is, the size of the recess in the region A2 is smaller than the size of the recess in the region A1.

[0105] FIG. 8(b) is an explanatory view of the recess R1 in the region A1 in the second embodiment. FIG. 8(c) is an explanatory view of the recess R2 in the region A2 in the second embodiment. In FIG. 8(b), one of the plurality of recesses R1 in the region A1 of the substrate S is shown, and in FIG. 8(c), two of the plurality of recesses R2 in the region A2 of the substrate S are shown. The recess R1 is a recess that can be a sub-pixel corresponding to 4K and is defined by a bank. The recess R2 is a recess that can be a sub-pixel corresponding to 8K and is defined by a bank.

[0106] Each step of the substrate processing method (article manufacturing method) of the second embodiment follows the flowchart of FIG. 4 described in the first embodiment. In the coating step S2 of FIG. 4, ink is supplied to each of the recesses R1 and R2 to form a solution film F0. The recess R2 is smaller in size than the recess R1. That is, the amount of the solution film F0 supplied to the recess R2 is less than the amount of the solution film F0 supplied to the recess R1. In other words, the amount of the solution film F0 supplied to the recess R1 is more than the amount of the solution film F0 supplied to the recess R2. The recess R1 is an example of a first recess, and the recess R2 is an example of a second recess. Each solution film F0 is composed of a solution containing a solvent L1, which is a first solvent, and a solute, as described in the first embodiment.

[0107] By the way, when the organic film of the organic EL element is produced by drying the solution film, whether the phenomenon of Marangoni convection or the phenomenon of the ink wicking up the side wall surface of the bank, which are the factors causing coffee ring, i.e., the factors causing film thickness unevenness, is dominant also depends on the size of the recess, i.e., the size of the solution film (ink amount).

[0108] For example, when the amount of ink dropped into the recess is large, the duration of Marangoni convection becomes long. Therefore, the main factor causing film thickness unevenness is Marangoni convection. On the other hand, when the amount of ink dropped into the recess is small, the main factor causing film thickness unevenness is the wicking up of the ink on the side wall surface. The amount of ink drop also varies depending on the formulation design of the ink material, mainly the solute concentration, and the film design of the organic film to be produced, mainly the film thickness.

[0109] And when the pixel size is small like in a high-definition display (for example, in the case of 8K), the amount of solution that can be held in the recess where the sub-pixels are formed is small. That is, the amount of solvent in the entire panel is small, and the drying time is short. On the other hand, when the pixel size is large (for example, in the case of 4K), the amount of solution that can be held in the recess where the sub-pixels are formed is large. That is, the amount of solvent in the entire panel is large, and the drying time is long.

[0110] Thus, when the pixel size is large, that is, when the size of the recess is large, the required amount of ink is large, and the main cause of film thickness unevenness shifts to Marangoni convection. Also, when the pixel size is small, that is, when the size of the recess is small, the required amount of ink is small, and the main cause of film thickness unevenness shifts to the wetting-up of the ink on the side wall surface. Thus, due to the difference in the amount of ink droplet deposition, that is, the pixel size, the main cause of film thickness unevenness is different.

[0111] In the case of the examples in FIGS. 8(a) to 8(c), in region A1 where an organic EL panel with a resolution of 8K is manufactured and region A2 where an organic EL panel with a resolution of 4K is manufactured, there are differences in the drying process of the solution film F0, so the adjustment of the liquid physical properties corresponding to each is effective. In region A1, since the amount of ink supplied to one recess R1 is large and the drying time is long, Marangoni convection becomes the dominant factor in causing film thickness unevenness. On the other hand, in region A2, since the amount of ink supplied to one recess R2 is small and the drying time is short, the wetting-up of the ink on the side wall surface of the bank becomes the dominant factor in causing film thickness unevenness.

[0112] FIG. 9 is an explanatory diagram of a partial configuration of a substrate processing apparatus according to the second embodiment. The substrate processing apparatus of the second embodiment has two supply units 110-1 and 110-2 instead of the supply unit 110 in the substrate processing apparatus 10 of the first embodiment. Further, the substrate processing apparatus of the second embodiment further has a box 40. The other configurations of the substrate processing apparatus of the second embodiment are the same as those of the substrate processing apparatus 10 of the first embodiment.

[0113] The configurations of the supply units 110-1 and 110-2 are the same as those of the supply unit 110 in the substrate processing apparatus 10 of the first embodiment. However, the solvent L2 stored in the solvent container 22 of the supply unit 110-1 is different from the solvent L3 stored in the solvent container 22 of the supply unit 110-2. That is, the type of the solvent L3 is different from the type of the solvent L2. The solvent L2 is an example of a second solvent, and the solvent L3 is an example of a third solvent. Each of the solvents L1 and L2 is a solvent having a lower saturated vapor pressure at 25°C than the solvent L1.

[0114] The solvent L2 is, for example, the high-viscosity solvent described in the first embodiment. That is, the solvent L2 is a solvent having a higher viscosity than the solvent L1.

[0115] The solvent L3 is, for example, the low-surface-tension solvent described in the first embodiment. That is, the solvent L3 is a solvent having a lower surface tension than the solvent L1.

[0116] The box 40 is disposed inside the container 101 in FIGS. 2 and 3. The box 40 is disposed inside the container 101 so as to be located above the substrate S conveyed by the transfer robot 9 (FIGS. 2 and 3). That is, the box 40 is separated from the substrate S so as not to contact the substrate S. Further, the box 40 is disposed in a size and position that overlap the entire substrate S in a plan view, that is, in a direction perpendicular to the main surface of the substrate S.

[0117] The box 40 is a box having an opening on the side of the substrate S, that is, on the lower end side. And the box 40 is configured to define a space SP1 communicating with the region A1 and a space SP2 communicating with the region A2. That is, the space SP1 faces the region A1 in the Z direction, and the space SP2 faces the region A2 in the Z direction. In the first embodiment, the box 40 has a partition plate 42 that partitions the space SP1 and the space SP2. The space SP1 is an example of a first space, and the space SP2 is an example of a second space.

[0118] The box 40 has an air supply port 41-1 connected to the supply unit 110-1 and an air supply port 41-2 connected to the supply unit 110-2.

[0119] The supply unit 110-1 is configured to supply the supply gas G20 to the space SP1 through the air supply port 41-1. The supply gas G20 is a mixed gas containing the gas of the solvent L2, that is, the solvent vapor G2, and the carrier gas G1. The supply gas G20 is an example of the first supply gas.

[0120] The supply unit 110-2 is configured to supply the supply gas G30 to the space SP2 through the air supply port 41-2. The supply gas G30 is a mixed gas containing the gas of the solvent L3, that is, the solvent vapor G3, and the carrier gas G1. The supply gas G20 is an example of the second supply gas.

[0121] In the second embodiment, in the liquid physical property adjustment step S3 of FIG. 4, by supplying the supply gas G20 to the space SP1, the solution film F0 disposed in the region A1 of the substrate S is exposed to the supply gas G20, and by supplying the supply gas G30 to the space SP2, the solution film F0 disposed in the region A2 of the substrate S is exposed to the supply gas G30.

[0122] When the solution film F0 disposed in the region A1 is exposed to the supply gas G20, the solvent vapor G2 contained in the supply gas G20, that is, the solvent L2, is taken into the solution film F0 and the liquid physical properties of the solution film F0 are adjusted. As a result, a solution film F0' with adjusted liquid physical properties is generated.

[0123] Also, when the solution film F0 disposed in the region A2 is exposed to the supply gas G30, the solvent vapor G3 contained in the supply gas G30, that is, the solvent L3, is taken into the solution film F0 and the liquid physical properties of the solution film F0 are adjusted. As a result, a solution film F0'' with adjusted liquid physical properties is generated.

[0124] Then, in the drying step S5, in the solution film F0´, mainly the Marangoni convection is reduced, and by drying the solution film F0´, a dry film with a uniform thickness is formed. Also, in the drying step S5, in the solution film F0´´, mainly the wetting-up on the side wall surface of the bulk is reduced, and by drying the solution film F0´´, a dry film with a uniform thickness is formed. Thereafter, in the firing step S6, by firing these dry films, an organic film (functional film) with a uniform thickness is formed.

[0125] Also, in the second embodiment, in the liquid physical property adjustment step S3, since the space SP1 and the space SP2 are partitioned by the box 40, the diffusion of the solvent vapor G2 and the solvent vapor G3 is suppressed, and the color mixing of the solvent vapor G2 and the solvent vapor G3 is reduced.

[0126] Although not shown in FIG. 9, the box 40 has an exhaust port communicating with the space SP1 and an exhaust port communicating with the space SP2. Each exhaust port is connected to an exhaust mechanism (not shown).

[0127] After the completion of the liquid physical property adjustment step S3 in FIG. 4, the control device 20 operates the exhaust mechanism, whereby the solvent vapor staying in each of the spaces SP1 and SP2 is quickly exhausted. Also, the spaces SP1 and SP2 can be made negative pressure compared to the space around the box 40, thereby reducing the diffusion of the solvent vapor into the space around the box 40.

[0128] <Modification 2> A modification 2 of the second embodiment will be described. When the solvent adheres to and aggregates on the surface of the box 40, there is a risk that the aggregated solvent will be dropped onto the substrate. FIG. 10 is an explanatory diagram of a partial configuration of a substrate processing apparatus according to a modification 2 of the second embodiment. In the modification 2, a liquid repellent member 44 is provided at least inside the box 40. Note that the air supply port is not shown in FIG. 10. Also, FIG. 10 shows an exhaust port 43-1 communicating with the space SP1 and an exhaust port 43-2 communicating with the space SP2, which are not shown in FIG. 9.

[0129] The liquid repellent member 44 is provided, for example, at the lower end of the partition plate 42 of the box 40, on the inner surface of the box 40, and at the lower end of the outer surface of the box 40.

[0130] Since the liquid repellent member 44 is provided on the box 40, the adhesion of the solvent to the surface of the box 40 is reduced.

[0131] The receding contact angle of the dynamic contact angle of the liquid repellent member 44 with respect to pure water is preferably 90 degrees or more and 120 degrees or less. Thereby, the adhesion of the solvent to the inner surface of the box 40 is more effectively reduced.

[0132] The material of the liquid repellent member 44 is preferably a fluororesin. For example, the material of the liquid repellent member 44 may be a resin containing fluorine such as tetrafluoroethylene resin (PTFE), perfluoroalkoxy resin (PFA), fluorinated ethylene propylene resin (FEP), ethylene tetrafluoroethylene resin, polychlorotrifluoroethylene resin, etc., a film made of such resin, or a fluorine-containing silane coupling agent.

[0133] When the supply units 110-1, 110-2 and the box 40 are applied to the drying device 4, since the liquid repellent member 44 is provided on the box 40, the adhesion of the solvent to the box 40 is reduced, so the influence on the drying step S5 is reduced.

[0134] In addition, at least one of the first embodiment and the modified example of the first embodiment may be combined with the second embodiment and the modified example of the second embodiment.

[0135] <Third Embodiment> The third embodiment will be described. Hereinafter, elements denoted by the same reference numerals as those in the first embodiment or the second embodiment have substantially the same configuration and operation as those described in the first embodiment or the second embodiment unless otherwise specified, and the parts different from the first embodiment or the second embodiment will be mainly described.

[0136] In the first embodiment, the case where the solvent vapor G2 supplied to the substrate S is a vapor (gas) of a single solvent will be described as an example. In the second embodiment, the case where the solvent vapor G2 supplied to the substrate S is a vapor (gas) of a single solvent and the solvent vapor G3 supplied to the substrate S is a vapor (gas) of a single solvent was described as an example, but the present invention is not limited thereto.

[0137] For example, the solvent vapor G2 supplied to the substrate S may contain vapors (gases) of a plurality of solvents, or the solvent vapor G3 supplied to the substrate S may contain vapors (gases) of a plurality of solvents. That is, gases of a plurality of solvents may be supplied to the substrate. Hereinafter, the solvent vapor G2 will be described.

[0138] The solvent vapor G2 supplied to the substrate S may be produced by generating a plurality of solvent vapors from a plurality of solvents and mixing the plurality of solvent vapors, or by producing a solvent vapor from a mixed solvent obtained by mixing a plurality of solvents. The solvent vapor G2 may be generated by either method, but the former method is easier to adjust the mixing ratio of the plurality of solvent vapors. Hereinafter, the configuration of the supply unit that generates the solvent vapor G2 by mixing a plurality of solvent vapors will be specifically described. Note that the configuration of the supply unit that generates the solvent vapor G3 is the same as that of the supply unit that generates the solvent vapor G2, and thus the description thereof will be omitted.

[0139] FIG. 11 is an explanatory diagram of a supply unit 110B of a substrate processing apparatus according to the third embodiment. The substrate processing apparatus of the third embodiment is obtained by replacing the supply unit 110 with a supply unit 110B in the substrate processing apparatus of the first embodiment. Note that, in the substrate processing apparatus of the second embodiment, the supply unit 110-1 may be replaced with the supply unit 110.

[0140] Hereinafter, the case where the solvent vapor G2 is two types of solvent vapors will be described as an example. The supply unit 110B is an example of a gas supply unit. The supply unit 110B includes a supply unit section 110B-1 and a supply unit section 110B-2. Each of the supply unit section 110B-1 and the supply unit section 110B-2 has the same configuration as the supply unit 110 shown in FIG. 6 described in the first embodiment.

[0141] In the third embodiment, the solvent L2-1 is stored in the solvent container 22 of the supply unit section 110B-1, and the solvent L2-2 is stored in the solvent container 22 of the supply unit section 110B-2. The solvents L2-1 and L2-2 are different in type from each other. And the solvents exemplified as the solvent L2 described in the first embodiment can be applied to each of the solvents L2-1 and L2-2.

[0142] The supply unit section 110B-1 generates a mixed gas G20-1 of a solvent vapor G2-1, which is a gas of the solvent L2-1, and a carrier gas G1, and the supply unit section 110B-2 generates a mixed gas G20-2 of a solvent vapor G2-2, which is a gas of the solvent L2-2, and a carrier gas G1. Then, the supply gas G20 is generated by mixing the mixed gas G20-1 and the mixed gas G20-2. The supply gas G20 is supplied to the container 101 shown in FIG. 3.

[0143] The supply gas G20 in the third embodiment includes a solvent vapor G2 in which the solvent vapor G2-1 and the solvent vapor G2-2 are mixed. That is, the supply gas G20 includes the solvent vapor G2-1, the solvent vapor G2-2, and the carrier gas G1.

[0144] The mixing ratio of the solvent vapor G2-1 and the solvent vapor G2-2 can be adjusted by the control device 20 controlling the flow rate adjustment mechanisms 21 of the respective supply unit parts 110B-1 and 110B2 to adjust the flow rate of the carrier gas G1. In the third embodiment, the volume flow rate of the carrier gas G1 is adjusted by the flow rate adjustment mechanisms 21 of the respective supply unit parts 110B-1 and 110B2, so that the mixing ratio of the solvent vapor G2-1 and the solvent vapor G2-2 is adjusted in terms of volume ratio. In this way, the solvent vapor G2-1 and the solvent vapor G2-2 can be supplied to the substrate S at a desired mixing ratio.

[0145] Although the case where there are two types of solvent species has been described as an example, the present invention is not limited to this, and there may be three or more types. That is, the supply unit 110B may be provided with a number of supply unit parts corresponding to the number of types of solvents to be mixed.

[0146] In this way, since a plurality of types of solvent vapors are mixed at a desired mixing ratio and supplied to the substrate S, it becomes possible to finely adjust the solution film F0, and the flattening of the formed organic film (functional film) can be further improved.

[0147] Here, the solvent L2-1 is preferably a solvent having a higher viscosity than the solvent L1, and the solvent L2-2 is preferably a solvent having a lower surface tension than the solvent L1. The solvent L2-1 is preferably a high-viscosity solvent exemplified in the first embodiment, and the solvent L2-2 is preferably a low-surface-tension solvent exemplified in the first embodiment.

[0148] Thereby, the phenomenon that causes film thickness unevenness, that is, the phenomenon of Marangoni convection and the phenomenon of ink wetting can be effectively reduced. Then, according to the degree to which the two phenomena contribute, by adjusting the mixing ratio of the solvent vapors G2-1 and G2-2, it becomes possible to more finely adjust the liquid physical properties of the solution film F0. Thereby, the flattening of the formed organic film (functional film) can be further improved.

[0149] When the supply unit 110B is applied to the drying apparatus 4, it becomes possible to supply solvent vapor according to the progress of the drying of the solution film F0 by changing the mixing ratio of the solvent vapors G2-1 and G2-2 according to the progress of the drying process of the solution film F0.

[0150] Note that at least one of the first embodiment, the modified example of the first embodiment, the second embodiment, and the modified example of the second embodiment may be combined with the third embodiment and the modified example of the third embodiment.

[0151] <Fourth Embodiment> The fourth embodiment will be described. Hereinafter, elements denoted by the same reference numerals as those in the first embodiment, the second embodiment, or the third embodiment have substantially the same configuration and operation as those described in the first embodiment, the second embodiment, or the third embodiment unless otherwise specified, and differences from the first embodiment, the second embodiment, or the third embodiment will be mainly described.

[0152] FIGS. 12(a) and 12(b) are schematic views of a substrate S processed in the manufacturing system of the fourth embodiment. In display production including an organic EL panel or the like, the substrate S is increasing in size in order to improve productivity. Under such circumstances, in order to achieve multi-product production according to customer needs, "mixed-flow production" in which panels of a plurality of specs (pixel size and pixel pitch) are produced on a single substrate S is in progress. The substrate S is a large substrate, for example, an 8.5-generation (2 m × 2 m) glass substrate. One pixel in each panel is composed of three sub-pixels of RGB. The configuration of the sub-pixels of each panel is as described in the first embodiment.

[0153] In addition, in a production line where the product lineup of panels such as an organic EL panel is switched, in order to increase the operating rate of the factory, it is necessary to efficiently perform changeover when switching the product lineup.

[0154] For example, as shown in FIG. 12(a), among the six panels manufactured from the substrate S, three are 55-inch panels with a resolution of 4K, and the remaining three are 55-inch panels with a resolution of 8K. Region A1 of the substrate S corresponds to the panel with a resolution of 4K, and region A2 of the substrate S corresponds to the panel with a resolution of 8K. Region A1 is an example of the first region, and region A2 is an example of the second region. As shown in FIG. 12(a), the size of the recess R12 (sub-pixel) in which the solution film F0 is disposed in region A2 is smaller than the size of the recess R11 (sub-pixel) in which the solution film F0 is disposed in region A1.

[0155] Also, for example, as shown in FIG. 12(b), among the five panels manufactured from the substrate S, three are 65-inch panels with a resolution of 4K, and the remaining two are 55-inch panels with a resolution of 4K. Region A1 of the substrate S corresponds to the 65-inch panel, and region A2 of the substrate S corresponds to the 55-inch panel. Region A1 is an example of the first region, and region A2 is an example of the second region. As shown in FIG. 12(b), the size of the recess R22 (sub-pixel) in which the solution film F0 is disposed in region A2 is smaller than the size of the recess R21 (sub-pixel) in which the solution film F0 is disposed in region A1.

[0156] In this way, cases such as when changing from the layout A shown in FIG. 12(a) to the layout B shown in FIG. 12(b) or when changing from the layout B to the layout A may occur. At this time, in the configuration of the second embodiment described above, it is necessary to replace the box 40.

[0157] FIG. 13 is an explanatory diagram of a partial configuration of a substrate processing apparatus according to the fourth embodiment. The substrate processing apparatus of the fourth embodiment includes a box 40C having a configuration different from that of the box 40 of the second embodiment.

[0158] Box 40C is disposed inside the container 101 of FIGS. 2 and 3. Box 40C is disposed inside the container 101 so as to be located above the substrate S conveyed by the transfer robot 9 (FIGS. 2 and 3). That is, Box 40C is separated from the substrate S so as not to contact the substrate S. Further, Box 40C is disposed in a size and position that overlaps the entire substrate S in a plan view, that is, in a direction perpendicular to the main surface of the substrate S.

[0159] Box 40C is a box having an opening on the side of the substrate S, that is, the lower end side. And Box 40C defines a space SP0 facing the substrate S. Box 40C has a partition plate 42C that partitions the space SP0 facing the substrate S into a plurality of partial spaces P1, P2, P3, P4.

[0160] The substrate processing apparatus according to the fourth embodiment includes a plurality of supply devices 110C-1, 110C-2, 110C-3, 110C-4. The supply device 110C-1 is connected to an air supply port corresponding to the partial space P1 in the box 40C. The supply device 110C-2 is connected to an air supply port corresponding to the partial space P2 in the box 40C. The supply device 110C-3 is connected to an air supply port corresponding to the partial space P3 in the box 40C. The supply device 110C-4 is connected to an air supply port corresponding to the partial space P4 in the box 40C.

[0161] The plurality of supply devices 110C-1, 110C-2, 110C-3, 110C-4 have the same configuration as each other, and the supply device 110C-1 will be described as a representative thereof.

[0162] The supply device 110C-1 has a plurality of supply units, for example, two supply units 110-1, 110-2. The configurations of the supply units 110-1, 110-2 are as shown in FIG. 9 described in the second embodiment. That is, the supply unit 110-1 can supply a supply gas G20 containing a solvent vapor G2 that is a gas of the solvent L2 to the partial space P1, and the supply unit 110-2 can supply a supply gas G20 containing a solvent vapor G3 that is a gas of the solvent L3 to the partial space P1.

[0163] The solvent vapor G2 is, for example, the vapor of the high-viscosity solvent described in the first embodiment, that is, the vapor of a solvent having a higher viscosity than the solvent L1. Further, as the solvent of the solvent vapor G2, among the high-viscosity solvents exemplified in the first embodiment, it is preferable to use any one of the high-viscosity solvents L2 shown in FIG. 7.

[0164] The solvent vapor G3 is, for example, the vapor of the low-surface-tension solvent described in the first embodiment, that is, the vapor of a solvent having a lower surface tension than the solvent L1. Further, as the solvent of the solvent vapor G3, among the low-surface-tension solvents exemplified in the first embodiment, it is preferable to use any one of the low-surface-tension solvents L2 shown in FIG. 7.

[0165] A valve VL1 is provided in the pipe on the output side of the supply unit 110-1, and a valve VL2 is provided in the pipe on the output side of the supply unit 110-2. The control device 20 controls the supply and stop of the supply gas G20 to the partial space P1 by opening and closing the valve VL1. Further, the control device 20 controls the supply and stop of the supply gas G30 to the partial space P1 by opening and closing the valve VL2. That is, the control device 20 controls the valves VL1 and VL2 so as to selectively supply either the supply gas G20 or the supply gas G30 to the partial space P1.

[0166] With the above configuration, either the supply gas G20 or the supply gas G30 can be selectively supplied to each of the partial spaces P1 to P4. That is, it is possible to individually select the gas to be supplied to the partial spaces P1 to P4.

[0167] Each step of the substrate processing method (article manufacturing method) of the fourth embodiment follows the flowchart of FIG. 4 described in the first embodiment. In the liquid physical property adjustment step S3, either the supply gas G20 or the supply gas G30 is selectively supplied to each of the plurality of partial spaces P1 to P4. FIGS. 14(a) and 14(b) are explanatory diagrams of the operation of the substrate processing apparatus according to the fourth embodiment.

[0168] For example, in the case of layout A shown in Fig. 12(a), as shown in Fig. 14(a), a supply gas G20 containing solvent vapor G2 is supplied to sub-spaces P2 and P4 among the plurality of sub-spaces P1 to P4, and a supply gas G30 containing solvent vapor G3 is supplied to sub-spaces P1 and P3. That is, sub-spaces P2 and P4 become a space SP1 communicating with the region A1 of the substrate S shown in Fig. 12(a), and sub-spaces P1 and P3 become a space SP2 communicating with the region A2 of the substrate S shown in Fig. 12(a). That is, the space SP1 faces the region A1 in the Z direction, and the space SP2 faces the region A2 in the Z direction. Thereby, the supply gas G20, that is, the solvent vapor G2 can be exposed to the solution film F0 on the region A1 facing the sub-spaces P2 and P4, and the supply gas G30, that is, the solvent vapor G3 can be exposed to the solution film F0 on the region A2 facing the sub-spaces P1 and P3.

[0169] Also, for example, in the case of layout B shown in Fig. 12(b), as shown in Fig. 14(b), a supply gas G20 containing solvent vapor G2 is supplied to sub-spaces P1 and P2 among the plurality of sub-spaces P1 to P4, and a supply gas G30 containing solvent vapor G3 is supplied to sub-spaces P3 and P4. That is, sub-spaces P1 and P2 become a space SP1 communicating with the region A1 of the substrate S shown in Fig. 12(b), and sub-spaces P3 and P4 become a space SP2 communicating with the region A2 of the substrate S shown in Fig. 12(b). That is, the space SP1 faces the region A1 in the Z direction, and the space SP2 faces the region A2 in the Z direction. Thereby, the supply gas G20, that is, the solvent vapor G2 can be exposed to the solution film F0 on the region A1 facing the sub-spaces P1 and P2, and the supply gas G30, that is, the solvent vapor G3 can be exposed to the solution film F0 on the region A2 facing the sub-spaces P3 and P4.

[0170] In this way, in the liquid physical property adjustment step S3, by selectively supplying either of the supply gases G20 and G30 to each of the plurality of sub-spaces P1 to P4, at least one of the plurality of sub-spaces P1 to P4 becomes the space SP1, and at least one of the plurality of sub-spaces P1 to P4 becomes the space SP2.

[0171] According to the fourth embodiment, by changing the types of gases supplied to the partial spaces P1 to P4 according to the layout and specifications (size) of the panel, it is not necessary to replace the box 40C with the change in layout. Thereby, the labor required for setup change can be reduced.

[0172] In the above description, the case where four partial spaces P1 to P4 are defined in the box 40C has been described as an example, but the present invention is not limited to this, and two partial spaces may be defined, or three partial spaces may be defined, or five or more partial spaces may be defined.

[0173] Also, each of the supply devices 110C-1 to 110C-4 is configured to be able to supply the vapors of two types of solvents, but the present invention is not limited to this, and by adding a supply unit, it may be configured to be able to supply three or more types of solvents.

[0174] Further, at least one of the first embodiment, the modified example of the first embodiment, the second embodiment, the modified example of the second embodiment, the third embodiment, and the modified example of the third embodiment may be combined with the fourth embodiment and the modified example of the fourth embodiment.

[0175] [Other Modified Examples] The present disclosure is not limited to the embodiments described above, and many modifications are possible within the technical idea of the present disclosure. For example, at least two of the above-described plurality of embodiments and plurality of modified examples may be combined. Also, the effects described in the present embodiment are merely an enumeration of the most preferable effects resulting from the embodiments of the present disclosure, and the effects according to the embodiments of the present disclosure are not limited to those described in the present embodiment.

[0176] In the above-described embodiments, the case of applying to the production of a display including an organic EL panel has been described, but the present invention is not limited to this, and for example, the above-described embodiments are also applicable to the production of a display including a liquid crystal panel.

[0177] The disclosure of the above embodiments includes the following items.

[0178] (Item 1) A substrate processing method, comprising a step of exposing a solution containing a liquid of a first solvent disposed on a substrate to a supply gas containing a gas of a second solvent having a saturation vapor pressure at 25°C lower than that of the first solvent to adjust the liquid physical properties of the solution. A substrate processing method characterized by the above.

[0179] (Item 2) The second solvent has a higher viscosity than the first solvent. The substrate processing method according to Item 1, characterized by the above.

[0180] (Item 3) The second solvent has a lower surface tension than the first solvent. The substrate processing method according to Item 1 or 2, characterized by the above.

[0181] (Item 4) The supply gas contains a surfactant. The substrate processing method according to any one of Items 1 to 3, characterized by the above.

[0182] (Item 5) The surface tension of a mixture in which the surfactant is added to the first solvent is lower than the surface tension of the first solvent. The substrate processing method according to Item 4, characterized by the above.

[0183] (Item 6) The surfactant is a fluorine-based surfactant. The substrate processing method according to Item 4 or 5, characterized by the above.

[0184] (Item 7) The supply gas is a mixed gas of a gas of the second solvent and a carrier gas. The substrate processing method according to any one of Items 1 to 6, characterized by the above.

[0185] (Item 8) Generating the mixed gas by bubbling the carrier gas into the liquid second solvent. The substrate processing method according to claim 7, characterized in that.

[0186] (Item 9) The solution is supplied to the recesses contained in the substrate. The substrate processing method according to any one of claims 1 to 8, characterized in that.

[0187] (Item 10) The supply gas is a first supply gas. In the step of adjusting the liquid physical properties of the solution, the solution disposed in the first region of the substrate is exposed to the first supply gas, and the solution disposed in the second region of the substrate is exposed to a second supply gas containing a gas of a third solvent having a lower saturated vapor pressure at 25 °C than the first solvent. The substrate processing method according to any one of claims 1 to 8, characterized in that.

[0188] (Item 11) The second solvent has a higher viscosity than the first solvent. The third solvent has a lower surface tension than the first solvent. The substrate processing method according to claim 10, characterized in that.

[0189] (Item 12) The solution is supplied to each of a first recess contained in the first region and a second recess smaller in size than the first recess and contained in the second region. The substrate processing method according to claim 10 or 11, characterized in that.

[0190] (Item 13) Above the substrate, a box is disposed that defines a first space with an open side of the substrate and communicating with the first region and a second space communicating with the second region. In the step of adjusting the liquid physical properties of the solution, the first supply gas is supplied to the first space, and the second supply gas is supplied to the second space. The substrate processing method according to any one of claims 10 to 12, characterized in that...

[0191] (Claim 14) At least the inner side of the box is provided with a liquid repellent member. The substrate processing method according to claim 13, characterized in that...

[0192] (Claim 15) The receding contact angle of the dynamic contact angle of the liquid repellent member with respect to pure water is 90 degrees or more and 120 degrees or less. The substrate processing method according to claim 14, characterized in that...

[0193] (Claim 16) The material of the liquid repellent member is a fluororesin. The substrate processing method according to claim 14 or 15, characterized in that...

[0194] (Claim 17) The box includes a partition plate that partitions the space facing the substrate into a plurality of partial spaces. In the step of adjusting the liquid physical properties of the solution, either the first supply gas or the second supply gas is selectively supplied to each of the plurality of partial spaces. At least one partial space to which the first supply gas is supplied among the plurality of partial spaces is the first space. At least one partial space to which the second supply gas is supplied among the plurality of partial spaces is the second space. The substrate processing method according to any one of claims 13 to 16, characterized in that...

[0195] (Claim 18) The gas of the second solvent includes gases of a plurality of solvents. The substrate processing method according to any one of claims 1 to 17, characterized in that...

[0196] (Claim 19) The gases of the plurality of solvents include a gas of a solvent having a higher viscosity than the first solvent and a gas of a solvent having a lower surface tension than the first solvent. The substrate processing method according to claim 18, characterized in that...

[0197] (Claim 20) The solution further contains at least one solvent different from the first solvent. The substrate processing method according to any one of claims 1 to 19, characterized in that...

[0198] (Claim 21) The solution is supplied to the substrate by an inkjet method. The substrate processing method according to any one of claims 1 to 20, characterized in that...

[0199] (Claim 22) The method further includes a step of drying the solution. The step of adjusting the liquid physical properties of the solution is performed before the step of drying the solution. The substrate processing method according to any one of claims 1 to 21, characterized in that...

[0200] (Claim 23) A method for manufacturing an article, characterized in that the substrate is processed by the substrate processing method according to any one of claims 1 to 22 to manufacture an article.

[0201] (Claim 24) A substrate processing apparatus, comprising: A container for transporting a substrate on which a solution containing a liquid of a first solvent is disposed; A gas supply unit that supplies a supply gas containing a gas of a second solvent having a lower saturated vapor pressure at 25°C than the first solvent into the container. The substrate processing apparatus, characterized in that...

[0202] (Claim 25) The substrate processing apparatus according to claim 24; A transport device capable of transporting the substrate; A drying device that transports the substrate on which the solution processed by the substrate processing apparatus is disposed and dries the solution. The system, characterized in that...

Explanation of Symbols

[0203] F0…Solution film (solution), G2…Solvent vapor (vapor of the second solvent), L1…Solvent (the first solvent), L2…Solvent (the second solvent), S…Substrate, 10…Substrate processing apparatus, 110…Supply unit (gas supply unit), 1000…Manufacturing system

Claims

1. A substrate processing method, comprising: exposing a solution containing a liquid of a first solvent disposed on a substrate to a supply gas containing a gas of a second solvent having a lower saturated vapor pressure at 25 °C than the first solvent to adjust the liquid physical properties of the solution. A substrate processing method characterized by the above.

2. The second solvent has a higher viscosity than the first solvent. The substrate processing method according to claim 1, characterized by the above.

3. The second solvent has a lower surface tension than the first solvent. The substrate processing method according to claim 1, characterized by the above.

4. The supply gas contains a surfactant. The substrate processing method according to claim 1, characterized by the above.

5. The surface tension of a mixture in which the surfactant is added to the first solvent is lower than the surface tension of the first solvent. The substrate processing method according to claim 4, characterized by the above.

6. The surfactant is a fluorine-based surfactant. The substrate processing method according to claim 4, characterized by the above.

7. The supply gas is a mixed gas of a gas of the second solvent and a carrier gas. The substrate processing method according to claim 1, characterized by the above.

8. The mixed gas is generated by a bubbling process of blowing the carrier gas into the liquid second solvent. The substrate processing method according to claim 7, characterized by the above.

9. The solution is supplied to a recess formed in the substrate. The substrate processing method according to claim 1, characterized by the above.

10. The supply gas is a first supply gas. In the step of adjusting the liquid physical properties of the solution, the solution disposed in the first region of the substrate is exposed to the first supply gas, and the solution disposed in the second region of the substrate is exposed to a second supply gas containing a gas of a third solvent having a lower saturated vapor pressure at 25 °C than the first solvent. The substrate processing method according to claim 1, characterized by the above.

11. The second solvent has a higher viscosity than the first solvent. The third solvent has a lower surface tension than the first solvent. The substrate processing method according to claim 10, characterized by the above.

12. The solution is supplied to each of a first recess formed in the first region and a second recess formed in the second region and having a smaller size than the first recess. The substrate processing method according to claim 10, characterized by the above.

13. Above the substrate, a box is disposed which defines a first space that is open on the side of the substrate and communicates with the first region and a second space that communicates with the second region. ​ In the step of adjusting the physical properties of the solution, the first supply gas is supplied to the first space, and the second supply gas is supplied to the second space. The substrate processing method according to claim 10, characterized in that.

14. A liquid repellent member is provided at least inside the box. The substrate processing method according to claim 13, characterized in that.

15. The receding contact angle of the dynamic contact angle of the liquid repellent member with respect to pure water is 90 degrees or more and 120 degrees or less. The substrate processing method according to claim 14, characterized in that.

16. The material of the liquid repellent member is a fluororesin. The substrate processing method according to claim 14, characterized in that.

17. The box includes a partition plate that partitions the space facing the substrate into a plurality of partial spaces. In the step of adjusting the physical properties of the solution, either the first supply gas or the second supply gas is selectively supplied to each of the plurality of partial spaces. At least one partial space to which the first supply gas is supplied among the plurality of partial spaces is the first space. At least one partial space to which the second supply gas is supplied among the plurality of partial spaces is the second space. The substrate processing method according to claim 13, characterized in that.

18. The gas of the second solvent includes gases of a plurality of solvents. The substrate processing method according to claim 1, characterized in that.

19. The gases of the plurality of solvents include a gas of a solvent having a higher viscosity than the first solvent and a gas of a solvent having a lower surface tension than the first solvent. The substrate processing method according to claim 18, characterized in that.

20. The solution further includes at least one solvent different from the first solvent. The substrate processing method according to claim 1, characterized in that.

21. The solution is supplied to the substrate by an inkjet method. The substrate processing method according to claim 1, characterized in that.

22. The method further includes a step of drying the solution. The step of adjusting the physical properties of the solution is performed before the step of drying the solution. The substrate processing method according to claim 1, characterized in that.

23. A method for manufacturing an article, characterized in that the substrate is processed by the substrate processing method according to any one of claims 1 to 22 to manufacture an article.

24. A substrate processing apparatus, A container for transporting a substrate on which a solution containing a liquid of a first solvent is disposed, A gas supply unit that supplies a supply gas containing a gas of a second solvent having a lower saturated vapor pressure at 25°C than the first solvent into the interior of the container. A substrate processing apparatus characterized by this.

25. The substrate processing apparatus according to claim 24, A transfer device capable of transferring the substrate, A drying device that transfers the substrate on which the solution processed by the substrate processing apparatus is disposed and dries the solution. A system characterized by this.

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