Light-emitting device, light-emitting module and multiple light-emitting devices

Abstract

To provide a light-emitting device capable of using a submount of the same design in common with two semiconductor laser elements differing in resonator-directional length from each other.SOLUTION: A light-emitting device comprises: a plurality of semiconductor laser elements which each have a light-emitting surface and a first side face on the opposite side from the light-emitting surface; a plurality of protective elements; and a plurality of submounts which each have a wiring layer having a first region where a semiconductor laser element is arranged and a second region where a protective element is mounted, wherein first protective elements are not arranged between a first virtual straight light passing the light-emitting surface of the first laser element and a second virtual straight light passing the first side face of the first semiconductor laser element, and some or all of second protective elements are arranged between a third virtual straight line passing light-emitting surfaces of the second laser elements and a fourth virtual straight line passing first side faces of the second semiconductor elements, the width middle point of a light-emitting surface of a semiconductor laser element not matching with the width middle point of a submount.SELECTED DRAWING: Figure 6

Description

Technical Field

[0001] The present invention relates to a light-emitting device, a light-emitting module, and a plurality of light-emitting devices including a first light-emitting device and a second light-emitting device.

Background Art

[0002] Japanese Patent Application Laid-Open No. 2023-164346 discloses that when the light-emitting surface of a semiconductor laser element is a front side surface, on the mounting surface of a submount, the semiconductor laser element and a protective element are arranged such that the protective element is located further rearward from the rear side surface of the semiconductor laser element.

Prior Art Document

Patent Document

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Disclosed is an invention that solves the problem of realizing a light-emitting device or a light-emitting module in which the same-designed submount can be shared for two semiconductor laser elements having different resonator-direction lengths.

[0005] Alternatively, instead of the above problems, disclosed is an invention that solves the problem of enabling sharing of the same-designed submount for a first light-emitting device and a second light-emitting device on which semiconductor laser elements having different resonator-direction lengths are mounted.

[0006] Alternatively, instead of each of the above problems, disclosed is an invention that solves the problem of realizing a light-emitting device or a light-emitting module that realizes a small-sized light-emitting device.

[0007] Alternatively, instead of each of the above problems, an invention is disclosed that solves the problem of realizing a light-emitting device or a light-emitting module that emits light that is easy to optically design.

[0008] Alternatively, instead of each of the above problems, an invention is disclosed that solves the problem of realizing a first light-emitting device and a second light-emitting device that can reduce the deviation of the light emission position when mounted in the same direction and when mounted facing each other.

[0009] Note that in this specification, inventions that comprehensively solve a plurality of the above-described problems are also disclosed.

Means for Solving the Problems

[0010] The light-emitting device disclosed in the embodiment includes a plurality of semiconductor laser elements each having a light-emitting surface and a first side surface which is the surface opposite to the light-emitting surface, a plurality of protective elements including a first protective element and a second protective element, a wiring layer having a first region on which the semiconductor laser element is placed and a second region on which the protective element is placed, and a mounting surface on which the wiring layer is provided, and a plurality of submounts having the same. The plurality of semiconductor laser elements include a first semiconductor laser element and a second semiconductor laser element having a resonator direction length greater than that of the first semiconductor laser element. The plurality of submounts include a first submount on which the first semiconductor laser element and the first protective element are placed, and a second submount on which the second semiconductor laser element and the second protective element are placed. In a top view, the first protective element is not disposed between a first virtual straight line passing through the light-emitting surface of the first semiconductor laser element and being parallel and a second virtual straight line passing through the first side surface of the first semiconductor laser element and being parallel. In a top view, a part or all of the second protective element is disposed between a third virtual straight line passing through the light-emitting surface of the second semiconductor laser element and being parallel and a fourth virtual straight line passing through the first side surface of the second semiconductor laser element and being parallel. In a direction parallel to the light-emitting surface of the first semiconductor laser element in a top view, the midpoint of the width of the light-emitting surface of the first semiconductor laser element does not coincide with the midpoint of the width of the first submount. In a direction parallel to the light-emitting surface of the second semiconductor laser element in a top view, the midpoint of the width of the light-emitting surface of the second semiconductor laser element does not coincide with the midpoint of the width of the second submount.

[0011] The light-emitting module disclosed in the embodiment includes a first light-emitting device, a second light-emitting device, and a mounting substrate on which the first light-emitting device and the second light-emitting device are mounted. The first light-emitting device includes a plurality of first semiconductor laser elements each having a light-emitting surface and a first side surface opposite to the light-emitting surface, a plurality of first protection elements, a plurality of first submounts each having a first wiring layer with a first region on which the first semiconductor laser element is placed and a second region on which the first protection element is placed, and a first mounting surface on which the first wiring layer is provided. The second light-emitting device includes a plurality of second semiconductor laser elements each having a light-emitting surface and a second side surface opposite to the light-emitting surface, a plurality of second protection elements, a plurality of second submounts each having a second wiring layer with a first region on which the second semiconductor laser element is placed and a second region on which the second protection element is placed, and a second mounting surface on which the second wiring layer is provided. The shape of the first wiring layer as viewed in a direction perpendicular to the first mounting surface is the same as the shape of the second wiring layer as viewed in a direction perpendicular to the second mounting surface. In a top view, the first protection element is not disposed between a first virtual straight line passing through the light-emitting surface of the first semiconductor laser element and parallel to it and a second virtual straight line passing through the first side surface of the first semiconductor laser element and parallel to it. In a top view, a part or all of the second protection element is disposed between a third virtual straight line passing through the light-emitting surface of the second semiconductor laser element and parallel to it and a fourth virtual straight line passing through the first side surface of the second semiconductor laser element and parallel to it. In a top view, with respect to the direction parallel to the light-emitting surface of the first semiconductor laser element, the midpoint of the width of the light-emitting surface of the first semiconductor laser element does not coincide with the midpoint of the width of the first submount. In a top view, with respect to the direction parallel to the light-emitting surface of the second semiconductor laser element, the midpoint of the width of the light-emitting surface of the second semiconductor laser element does not coincide with the midpoint of the width of the second submount.

[0012] In addition, the plurality of light-emitting devices disclosed in the embodiment include a first light-emitting device and a second light-emitting device. The first light-emitting device includes a plurality of first semiconductor laser elements each having a light-emitting surface and a first side surface opposite to the light-emitting surface, a plurality of first protection elements, a first wiring layer having a first region on which the first semiconductor laser element is mounted and a second region on which the first protection element is mounted, and a plurality of first submounts having a first mounting surface on which the first wiring layer is provided. The second light-emitting device includes a plurality of second semiconductor laser elements each having a light-emitting surface and a second side surface opposite to the light-emitting surface, a plurality of second protection elements, a second wiring layer having a first region on which the second semiconductor laser element is mounted and a second region on which the second protection element is mounted, and a plurality of second submounts having a second mounting surface on which the second wiring layer is provided. The shape of the first wiring layer as viewed from a direction perpendicular to the first mounting surface is the same as the shape of the second wiring layer as viewed from a direction perpendicular to the second mounting surface. In a top view, the first protection element is not disposed between a first virtual straight line passing through the light-emitting surface of the first semiconductor laser element and parallel thereto and a second virtual straight line passing through the first side surface of the first semiconductor laser element and parallel thereto. In a top view, a part or all of the second protection element is disposed between a third virtual straight line passing through the light-emitting surface of the second semiconductor laser element and parallel thereto and a fourth virtual straight line passing through the first side surface of the second semiconductor laser element and parallel thereto. In a top view, with respect to a direction parallel to the light-emitting surface of the first semiconductor laser element, the midpoint of the width of the light-emitting surface of the first semiconductor laser element does not coincide with the midpoint of the width of the first submount. In a top view, with respect to a direction parallel to the light-emitting surface of the second semiconductor laser element, the midpoint of the width of the light-emitting surface of the second semiconductor laser element does not coincide with the midpoint of the width of the second submount.

[0013] According to at least one of one or more inventions disclosed by the embodiment, submounts with the same design can be shared for two semiconductor laser elements having different resonator-direction lengths.

Brief Description of the Drawings

[0014]

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Embodiments for Carrying Out the Invention

[0015] In this specification or the claims, with regard to polygons such as triangles and quadrilaterals, shapes that have been processed such as rounding, chamfering, corner rounding, or filleting at the corners of the polygon are also included and are referred to as polygons. Also, not limited to the corners (ends of the sides), shapes that have been processed in the middle part of the sides are likewise referred to as polygons. That is, shapes that have been partially processed while leaving the polygon as a base are included in the interpretation of "polygon" described in this specification and the claims.

[0016] Moreover, not only for polygons, but also for words representing specific shapes such as trapezoids, circles, concavities and convexities, the same applies. The same is true when dealing with each side forming the shape. That is, even if a side has been processed at a corner or an intermediate portion, the processed portion is included in the interpretation of the "side". When distinguishing a "polygon" or a "side" without partial processing from the processed shape, "strict" is added, for example, it is described as "strict quadrilateral", etc.

[0017] In addition, in this specification or the claims, descriptions such as up and down (above / below), left and right, front and back, front and rear (front / back), near and far, etc. only describe relative positions, orientations, directions, etc., and do not have to match the relationships during use.

[0018] In addition, in the drawings, directions such as the X direction, Y direction, and Z direction may be indicated using arrows. The directions of these arrows are consistent among a plurality of drawings related to the same embodiment. Also, in the drawings, the direction of the arrow marked with X, Y, and Z is the positive direction, and the opposite direction is the negative direction. For example, the direction in which X is marked at the tip of the arrow is the X direction and is the positive direction. In this specification, the direction that is the X direction and is the positive direction is referred to as the "positive direction of X", and the opposite direction is referred to as the "negative direction of X". When referring to the "X direction", it includes both the positive and negative directions. The same applies to the Y direction and the Z direction.

[0019] In addition, in this specification, when a certain object is specified as "one or more" and this object is described, the forms in which this object is one and the forms in which this object is plural are explained together. Therefore, the description specified as "one or more" supports any of the embodiments including one or more objects, the embodiments including at least one object, and the embodiments including a plurality of objects.

[0020] In addition, in this specification, a description explaining "one or each" of the objects is a description that summarizes the description of one object in an embodiment having one object, the description of one object in an embodiment having a plurality of objects, and the description of each of the plurality of objects in an embodiment having a plurality of objects. Therefore, the description explaining "one or each" of the objects supports any of the following: in an embodiment having one object, this one object has the description content; in an embodiment having a plurality of objects, at least one of these objects has the description content; in an embodiment having a plurality of objects, each of these plurality of objects has the description content; and in an embodiment having one or a plurality of objects, all the objects have the description content.

[0021] In addition, in this specification, when explaining components or the like, there may be descriptions such as "member" or "part". "Member" shall refer to an object that is physically treated as a single entity. An object that is physically treated as a single entity can also be said to be an object that is treated as one part in the manufacturing process. On the other hand, "part" shall refer to an object that does not necessarily need to be physically treated as a single entity. For example, "part" is used when partially grasping a part of one member or when grasping a plurality of members as one object.

[0022] Note that the above distinction between "member" and "part" does not indicate an intention to consciously limit the scope of rights in the interpretation of the doctrine of equivalents. That is, even if there is a component described as "member" in the claims, the applicant does not recognize that it is essential for the application of the present invention to physically treat this component as a single entity solely based on this fact.

[0023] In addition, in this specification or the claims, when there are a plurality of certain components and they are to be expressed separately for distinction, "first", "second", etc. may be appended to the heads of these components for distinction. Also, there may be cases where the objects to be distinguished are different between this specification and the claims. Therefore, even if a component with the same appended notation as in this specification is described in the claims, the object specified by this component may not match between this specification and the claims.

[0024] For example, in this specification, there are components distinguished by appending "first", "second", and "third". When the components with "first" and "third" appended in this specification are described in the claims, for the sake of readability, in the claims, they may be distinguished by appending "first" and "second". In this case, the components with "first" and "second" appended in the claims respectively refer to the components with "first" and "third" appended in this specification. Note that the application object of this rule is not limited to components, and it can also be reasonably and flexibly applied to other objects.

[0025] Hereinafter, embodiments for implementing the present invention will be described. Furthermore, specific embodiments for implementing the present invention will be described with reference to the drawings. Note that the embodiments for implementing the present invention are not limited to this specific embodiment. That is, the illustrated embodiments are not the only forms in which the present invention can be realized. Note that the sizes and positional relationships of the members shown in each drawing may be exaggerated for the convenience of understanding.

[0026] <First Embodiment> The light-emitting device 1 according to the first embodiment will be described. FIGS. 1 to 13 are drawings for explaining an exemplary form of the light-emitting device 1. FIG. 1 is a perspective view of the light-emitting device 1. FIG. 2 is a side view of the light-emitting device 1. FIG. 3 is a cross-sectional view of the light-emitting device 1 taken along the III-III cross-sectional line of FIG. 1. FIG. 4 is a top view for explaining the internal structure of the light-emitting device 1. FIG. 5 is a top view in a state where the wiring 60 is removed from FIG. 4. FIG. 6 is a top view of the submount 30. FIG. 7A is a top view in a state where the first semiconductor laser element 20A and the first protection element 50A are mounted on the first submount 30A. FIG. 7B is a top view in a state where the second semiconductor laser element 20B and the second protection element 50B are mounted on the second submount 30B. FIG. 8 is a side view in a state where the semiconductor laser element 20 and the protection element 50 are mounted on the submount 30. FIG. 9 is a perspective view of the package 10. FIG. 10 is a cross-sectional view of the package 10 taken along the X-X cross-sectional line of FIG. 9. FIG. 11 is a top view of the base 11. FIG. 12 is a bottom view of the base 11. FIG. 13 is a cross-sectional view of the base 11 taken along the XIII-XIII cross-sectional line of FIG. 11.

[0027] The light-emitting device 1 includes a plurality of components. The plurality of components include the packages 10, one or more semiconductor laser elements 20, one or more submounts 30, one or more reflecting members 40, one or more protection elements 50, a plurality of wirings 60, and an optical member 70.

[0028] Note that the light-emitting device 1 may further include other components. For example, the light-emitting device 1 may further include a semiconductor laser element separately from the one or more semiconductor laser elements 20. Also, the light-emitting device 1 may not include some of the plurality of components listed here.

[0029] First, each component will be described.

[0030] (Package 10) Package 10 includes a base body 11 and a lid body 14. The lid body 14 is joined to the base body 11 to form the package 10. In the package 10, an internal space is defined in which other components are arranged. This internal space is a closed space surrounded by the base body 11 and the lid body 14. Also, this internal space can be a space sealed in a vacuum or airtight state.

[0031] In a top view, the outer edge shape of the package 10 is rectangular. This rectangle can be a rectangle having a long side and a short side. In the illustrated package 10, the long side direction of this rectangle is the same as the X direction, and the short side direction is the same as the Y direction. Note that in a top view, the outer edge shape of the package 10 does not have to be rectangular.

[0032] In the package 10, an internal space is formed in which other components are arranged. The first upper surface 11A of the package 10 is part of the region defining the internal space. Also, each inner surface 11E and the lower surface 14B of the package 10 are part of the region defining the internal space.

[0033] The base body 11 has a first upper surface 11A and a lower surface 11B. The base body 11 has a second upper surface 11C. The base body 11 has one or more outer surfaces 11D. The base body 11 has one or more inner surfaces 11E. One or more outer surfaces 11D intersect the second upper surface 11C. One or more outer surfaces 11D intersect the lower surface 11B. One or more inner surfaces 11E intersect the second upper surface 11C.

[0034] In a top view, the outer edge shape of the base body 11 is rectangular. In a top view, the outer edge shape of the base body 11 is the outer edge shape of the package 10. In a top view, the outer edge shape of the first upper surface 11A is rectangular. This rectangle can be a rectangle having a long side and a short side. The long side direction of the first upper surface 11A is parallel to the long side direction of the outer edge shape of the base body 11. Note that in a top view, the outer edge shape of the first upper surface 11A does not have to be rectangular.

[0035] In a top view, the first upper surface 11A is surrounded by the second upper surface 11C. The second upper surface 11C is an annular surface that surrounds the first upper surface 11A in a top view. The second upper surface 11C is a rectangular annular surface. Here, the frame defined by the inner edge of the second upper surface 11C is referred to as the inner frame of the second upper surface 11C, and the frame defined by the outer edge of the second upper surface 11C is referred to as the outer frame of the second upper surface 11C.

[0036] The base body 11 has a recess surrounded by the frame formed by the second upper surface 11C. The recess defines a portion that is recessed downward from the second upper surface 11C in the base body 11. The first upper surface 11A is part of the recess. One or more inner surfaces 11E are part of the recess. The second upper surface 11C is located above the first upper surface 11A.

[0037] The base body 11 has one or more stepped portions 11F. The stepped portion 11F has an upper surface 11G and a side surface 11H that intersects the upper surface 11G and extends downward from the upper surface 11G. Here, the surfaces included in one stepped portion 11F are only one upper surface 11G and one side surface 11H. The upper surface 11G intersects the inner surface 11E. The side surface 11H intersects the first upper surface 11A.

[0038] One or each stepped portion 11F is provided inside the inner frame of the second upper surface 11C in a top view. One or each stepped portion 11F is formed along a part or all of the inner surface 11E in a top view. In the base body 11, the side surface 11H is an inner surface, but the side surface 11H and the inner surface 11E are different surfaces. One or each inner surface 11E and one or each side surface 11H are perpendicular to the first upper surface 11A. Here, the perpendicularity allows a difference of ±3 degrees.

[0039] One or more stepped portions 11F may include a first stepped portion 11F1 and a second stepped portion 11F2. The first stepped portion 11F1 and the second stepped portion 11F2 are provided at positions where their respective side surfaces 11H face each other. The first stepped portion 11F1 and the second stepped portion 11F2 are provided on the short side of the inner frame of the second upper surface 11C.

[0040] One or each inner surface 11E, and one or each side surface 11H are between the first upper surface 11A and the second upper surface 11C. The one or more inner surfaces 11E include a first inner surface 11E1 and a second inner surface 11E2 facing each other. The base body 11 has a plurality of side surfaces 11H including a first side surface 11H1 and a second side surface 11H2 facing each other.

[0041] The first inner surface 11E1 intersects the upper surface 11G of the first step portion 11F1. The second inner surface 11E2 intersects the upper surface 11G of the second step portion 11F2. The first side surface 11H1 is the side surface 11H of the first step portion 11F1, and the second side surface 11H2 is the side surface 11H of the second step portion 11F2.

[0042] The base body 11 has a base portion 11M and a frame portion 11N. The base portion 11M and the frame portion 11N may be members made of different materials. The base body 11 may be configured to include a base member corresponding to the base portion 11M and a frame member corresponding to the frame portion 11N.

[0043] The first upper surface 11A is included in the base portion 11M. The second upper surface 11C is included in the frame portion 11N. The frame portion 11N includes one or more outer surfaces 11D and one or more inner surfaces 11E. The frame portion 11N includes one or more step portions 11F.

[0044] The lower surface of the base portion 11M constitutes part or all of the lower surface 11B of the base body 11. When the lower surface of the base portion 11M constitutes part of the lower surface 11B of the base body 11, the lower surface of the frame portion 11N constitutes the remaining region of the lower surface 11B of the base body.

[0045] The base body 11 has a plurality of wiring portions 12A. The plurality of wiring portions 12A include one or more first wiring portions 12A1 arranged in the internal space of the package 10 and one or more second wiring portions 12A2 provided on the outer surface of the package 10.

[0046] One or each of the first wiring portions 12A1 is provided on the upper surface 11G of the step portion 11F. The substrate 11 has one or a plurality of first wiring portions 12A1 provided on the upper surface 11G of the first step portion 11F1. The substrate 11 has one or a plurality of first wiring portions 12A1 provided on the upper surface 11G of the second step portion 11F2.

[0047] One or each of the second wiring portions 12A2 is provided on the lower surface 11B of the package 10. One or each of the second wiring portions 12A2 is provided on the lower surface of the frame portion 11N. Note that the second wiring portion 12A2 may be provided on an outer surface different from the lower surface 11B of the package 10.

[0048] In a top view, when the substrate 11 is divided into two regions by a virtual line passing through the side surface 11H of the first step portion 11F1 and parallel to this side surface 11H, the substrate 11 has one or a plurality of second wiring portions 12A2 provided on the lower surface 11B of the substrate 11 in a region including the upper surface 11G of this first step portion 11F1.

[0049] In a top view, when the substrate 11 is divided into two regions by a virtual line passing through the side surface 11H of the second step portion 11F2 and parallel to this side surface 11H, the substrate 11 has one or a plurality of second wiring portions 12A2 provided on the lower surface 11B of the substrate 11 in a region including the upper surface 11G of this second step portion 11F2.

[0050] In the substrate 11, one or each of the first wiring portions 12A1 is electrically connected to the second wiring portion 12A2. One or a plurality of first wiring portions 12A1 are electrically connected to different second wiring portions 12A2.

[0051] The substrate 11 has a bonding pattern 13A. The bonding pattern 13A is provided on the second upper surface 11C. The bonding pattern 13A is provided in an annular shape. The bonding pattern 13A is provided in a rectangular annular shape. In a top view, the first upper surface 11A is surrounded by the bonding pattern 13A.

[0052] The substrate 11 can be formed, for example, using ceramic as the main material. Examples of the ceramic that serves as the main material of the substrate 11 include aluminum nitride, silicon nitride, aluminum oxide, or silicon carbide.

[0053] Here, the main material refers to the material that occupies the largest proportion of the mass or volume in the object to be formed. Note that when the object to be formed is formed from one material, that material is the main material. That is, for a certain material to be the main material includes the fact that the proportion occupied by that material can be 100%.

[0054] The substrate 11 may be formed using a base member and a frame member formed using different main materials. The base member can be formed, for example, using a material with excellent heat dissipation properties such as metal or a composite containing metal, graphite, or diamond as the main material. Examples of the metal that serves as the main material of the base member include copper, aluminum, or iron. Examples of the composite containing metal that serves as the main material of the base member include copper molybdenum or copper tungsten. The frame member can be formed, for example, using the ceramic mentioned above as the main material of the substrate 11 as the main material.

[0055] The wiring portion 12A can be formed, for example, using a metal material as the main material. Examples of the metal material that serves as the main material of the wiring portion 12A include single metals such as Cu, Ag, Ni, Au, Ti, Pt, Pd, Cr, W, or alloys containing these metals. The wiring portion 12A can be composed of, for example, one or a plurality of metal layers.

[0056] The bonding pattern 13A can be formed, for example, using a metal material as the main material. Examples of the metal material that serves as the main material of the bonding pattern 13A include single metals such as Cu, Ag, Ni, Au, Sn, Ti, Pd, or alloys containing these metals. The bonding pattern 13A can be composed of, for example, one or a plurality of metal layers.

[0057] The lid 14 has an upper surface 14A and a lower surface 14B. Further, the lid 14 has one or a plurality of side surfaces 14C. The lid 14 is configured in a rectangular parallelepiped flat plate shape. Note that the shape of the lid 14 does not have to be a rectangular parallelepiped.

[0058] The lid 14 is joined to the base 11. The lower surface 14B of the lid 14 is joined to the second upper surface 11C of the base 11. The lid 14 is joined to the joining pattern 13A of the base 11. The lid 14 is joined to the base 11 via an adhesive.

[0059] The lid 14 has light transmissivity that allows light to pass through. Here, the light transmissivity means that the transmittance is 80% or more with respect to the light incident on the lid 14. Note that the lid 14 may have a partially non-light-transmissive region (a region that does not have light transmissivity).

[0060] The lid 14 can be formed using, for example, glass as a main material. The lid 14 can also be formed using, for example, sapphire as a main material.

[0061] (Semiconductor laser element 20) The semiconductor laser element 20 has an upper surface 21A, a lower surface 21B, and a plurality of side surfaces 21C. The shape of the upper surface 21A is a rectangle having a long side and a short side. The outer shape of the semiconductor laser element 20 in a top view is a rectangle having a long side and a short side. Note that the shape of the upper surface 21A and the outer shape of the semiconductor laser element 20 in a top view are not limited to this.

[0062] The semiconductor laser element 20 has a light emitting surface 22 that emits light. For example, a side surface 21C can be the light emitting surface 22. The side surface 21C that becomes the light emitting surface 22 intersects the short side of the upper surface 21A. Further, for example, the upper surface 21A can be the light emitting surface 22.

[0063] The plurality of side surfaces 21C includes a first side surface 21C1 that is the surface on the opposite side of the light emitting surface 22. The first side surface 21C1 intersects the short side of the upper surface 21A. In the semiconductor laser element 20, a resonator extends in a direction perpendicular to the light emitting surface 22. The direction perpendicular to the light emitting surface 22 is referred to as the resonator direction.

[0064] The semiconductor laser element 20 has a length in the resonator direction that is greater than the length in the direction parallel to the light emitting surface 22. In the illustrated semiconductor laser element 20, the resonator direction of the semiconductor laser element 20 is the same direction as the Y direction. Also, the resonator direction and the long side direction of the outer shape of the semiconductor laser element 20 in top view are parallel.

[0065] As the semiconductor laser element 20, a single emitter semiconductor laser element having one emitter can be employed. Also, as the semiconductor laser element 20, a multi-emitter semiconductor laser element having a plurality of emitters can be employed.

[0066] As the semiconductor laser element 20, for example, a semiconductor laser element that emits blue light can be employed. Also, for example, as the semiconductor laser element 20, a semiconductor laser element that emits green light can be employed. Also, for example, as the semiconductor laser element 20, a semiconductor laser element that emits red light can be employed. Note that as the semiconductor laser element 20, a semiconductor laser element that emits light of other colors or wavelengths may be employed.

[0067] Here, blue light refers to light having an emission peak wavelength in the range of 420 nm to 494 nm. Green light refers to light having an emission peak wavelength in the range of 495 nm to 570 nm. Red light refers to light having an emission peak wavelength in the range of 605 nm to 750 nm.

[0068] Examples of the semiconductor laser element 20 that emits blue light or the semiconductor laser element 20 that emits green light include semiconductor laser elements containing a nitride semiconductor. As the nitride semiconductor, for example, GaN-based semiconductors such as GaN, InGaN, and AlGaN can be employed. Examples of the semiconductor laser element 20 that emits red light include semiconductor laser elements containing InAlGaP-based, GaInP-based, and GaAs-based semiconductors such as GaAs and AlGaAs.

[0069] The semiconductor laser element 20 emits a laser beam with directivity. Divergent light having divergence is emitted from the light emitting surface 22 (emitting end face) of the semiconductor laser element 20. The light emitted from the semiconductor laser element 20 forms an elliptical far-field pattern (hereinafter referred to as "FFP") on a plane parallel to the light emitting surface 22. The FFP is the shape and light intensity distribution of the emitted light at a position away from the light emitting surface of the semiconductor laser element.

[0070] Here, the light passing through the center of the elliptical shape of the FFP, in other words, the light with the peak intensity in the light intensity distribution of the FFP, is called the light traveling along the optical axis or the light passing through the optical axis. Also, in the light intensity distribution of the FFP, the light having an intensity of 1 / e 2 or more of the peak intensity value is called the light of the main part.

[0071] The shape of the FFP of the light emitted from the semiconductor laser element 20 is an elliptical shape in which the stacking direction is longer than the direction perpendicular to the stacking direction on a plane parallel to the light emitting surface 22. The stacking direction is the direction in which a plurality of semiconductor layers including the active layer are stacked in the semiconductor laser element 20. The direction perpendicular to the stacking direction can also be called the plane direction of the semiconductor layer. Also, the major axis direction of the elliptical shape of the FFP can be called the fast axis direction of the semiconductor laser element 20, and the minor axis direction can be called the slow axis direction of the semiconductor laser element 20.

[0072] Based on the light intensity distribution of the FFP, the angle at which the light with an intensity of 1 / e 2 of the peak light intensity spreads is defined as the light divergence angle of the semiconductor laser element 20. Here, the light divergence angle is indicated by the angle formed by the light with the peak light intensity (the light passing through the optical axis) and the light with an intensity of 1 / e 2 of the peak light intensity. Note that the light divergence angle may be obtained from, for example, the light intensity at half the peak light intensity in addition to the light intensity of 1 / e 2 of the peak light intensity. In the description of this specification, when simply referring to the "light divergence angle", it refers to the light divergence angle at the light intensity of 1 / e 2 of the peak light intensity.

[0073] The divergence angle of the light emitted from the semiconductor laser element 20 in the fast axis direction can be 10 degrees or more and less than 40 degrees. Further, the divergence angle of this light in the slow axis direction can be more than 0 degrees and 15 degrees or less. Further, for this light, the divergence angle in the fast axis direction is larger than the divergence angle in the slow axis direction.

[0074] For example, the divergence angle of the blue light emitted from the semiconductor laser element 20 in the fast axis direction can be 15 degrees or more and less than 30 degrees, and the divergence angle in the slow axis direction can be 2 degrees or more and less than 8 degrees. Further, for example, the divergence angle of the green light emitted from the semiconductor laser element 20 in the fast axis direction can be 15 degrees or more and less than 30 degrees, and the divergence angle in the slow axis direction can be 2 degrees or more and less than 15 degrees. Further, for example, the divergence angle of the red light emitted from the semiconductor laser element 20 in the fast axis direction can be 20 degrees or more and less than 40 degrees, and the divergence angle in the slow axis direction can be 2 degrees or more and less than 10 degrees.

[0075] (Submount 30) The submount 30 has an upper surface 31A, a lower surface 31B, and one or more side surfaces 31C. The upper surface 31A can be said to be a mounting surface on which other components are mounted. The shape of the upper surface 31A is rectangular. This rectangle of the upper surface 31A can have a short side and a long side. Note that the shape of the upper surface 31A does not have to be rectangular.

[0076] The outer shape of the submount 30 in a top view is rectangular. This rectangle of the submount 30 can have a short side and a long side. Note that the outer shape of the submount 30 in a top view does not have to be rectangular. The submount 30 can have an outer shape in which the length in one direction (hereinafter, this direction is referred to as the short side direction of the submount 30) is smaller than the length in the direction perpendicular thereto (hereinafter, this direction is referred to as the long side direction of the submount 30) in a top view. In the illustrated submount 30, the short side direction is the same direction as the X direction, and the long side direction is the same direction as the Y direction.

[0077] The submount 30 can be configured to include a substrate 32A and an upper metal member 32B. Further, the submount 30 can be configured to further include a lower metal member 32C. The upper metal member 32B is provided on the upper surface side of the substrate 32A. The lower metal member 32C is provided on the lower surface side of the substrate 32A. The submount 30 further includes a wiring layer 33. The wiring layer 33 is provided on the upper metal member 32B.

[0078] The wiring layer 33 is provided on the upper surface 31A of the submount 30. Other components are mounted on the wiring layer 33. The wiring layer 33 has a first region 33A and a second region 33B. Different components are mounted on the first region 33A and the second region 33B.

[0079] In a top view, the wiring layer 33 has a rectangular region where the width in the longitudinal direction is larger than the width in the short transverse direction, and a convex region extending in the short transverse direction beyond this rectangle. This convex shape extends in the short transverse direction from a corner of this rectangle. In other words, one side extending in the short transverse direction of the wiring layer 33 includes the side extending in the short transverse direction in this rectangular region and the side extending in the short transverse direction in this convex region.

[0080] The first region 33A includes this rectangular region in a top view. The second region 33B includes this convex region in a top view. In the illustrated submount 30, this rectangular region is the first region 33A, and this convex region is the second region 33B. Note that the shape of this convex region is a rectangular shape where the ratio of the width in the longitudinal direction to the width in the short transverse direction is smaller than the rectangle of the first region 33A.

[0081] Here, the midpoint of the width of the first region 33A in the short transverse direction of the submount 30 is denoted as midpoint MP1, the midpoint of the width of the submount 30 in the short transverse direction of the submount 30 is denoted as midpoint MP2, and the midpoint of the width of the upper surface 31A in the short transverse direction of the submount 30 is denoted as midpoint MP3.

[0082] In a top view, with respect to the short side direction, the midpoint MP1 of the first region 33A does not coincide with the midpoint MP2 of the submount 30. In a top view, with respect to the short side direction, the midpoint MP1 of the first region 33A does not coincide with the midpoint MP3 of the upper surface 31A. In a top view, with respect to the short side direction, the midpoint MP2 of the submount 30 and the midpoint MP3 of the upper surface 31A coincide. Here, the coincidence means including a difference within ±60 μm.

[0083] By not making the midpoint MP1 coincide with the midpoint MP2 or the midpoint MP3, the width in the short side direction in which the second region 33B can be provided becomes larger than the case where the midpoint MP1 coincides with the midpoint MP2 or the midpoint MP3. As a result, it becomes easier to mount the components placed in the first region 33A and the components placed in the second region 33B without contact, and productivity can be improved.

[0084] In a top view, with respect to the short side direction, the distance from the midpoint MP2 to the midpoint MP1 is 10 μm or more and 200 μm or less. Further, this distance is preferably 45 μm or more and 85 μm or less. By setting it to 45 μm or more, it becomes easier to mount the components placed in the second region 33B without contact. By setting it to 85 μm or less, a decrease in heat dissipation performance with respect to the components placed in the first region 33A can be suppressed to a certain extent. The upper limit allowed for this distance can be determined according to the required heat dissipation performance for the components placed in the first region 33A.

[0085] With respect to the longitudinal direction of the submount 30, the difference between the width of the first region 33A and the width of the upper surface 31A is 0 or more and 130 μm or less. The wiring layer 33 is formed such that the first region 33A has a width close to the longitudinal width of the mounting surface of the submount 30. With respect to the short side direction of the submount 30, the second region 33B extends from the boundary with the first region 33A to the end of the upper surface 31A.

[0086] In a top view, in the longitudinal direction, the width of the second region 33B is 1 / 4 or less of the width of the first region 33A. In a top view, a virtual straight line SL1 parallel to the short side direction passing through the midpoint of the longitudinal width of the submount 30 passes through the first region 33A and does not pass through the second region 33B.

[0087] The substrate 32A has insulation. The substrate 32A is formed of, for example, silicon nitride, aluminum nitride, or silicon carbide. It is advisable to select a ceramic with relatively good heat dissipation (high thermal conductivity) as the main material of the substrate 32A.

[0088] As the main material of the upper metal member 32B, a metal such as copper or aluminum is used. The upper metal member 32B has one or a plurality of metal layers. The upper metal member 32B may have a plurality of metal layers with different metals as the main materials.

[0089] As the main material of the lower metal member 32C, a metal such as copper or aluminum is used. The lower metal member 32C has one or a plurality of metal layers. The lower metal member 32C may have a plurality of metal layers with different metals as the main materials.

[0090] The wiring layer 33 can be formed using a metal. For example, the wiring layer 33 can be formed using an AuSn solder (a metal layer of AuSn).

[0091] For example, the length of the submount 30 in the short side direction or the short hand direction is 600 μm or more and 900 μm or less. Also, the length of the submount 30 in the long side direction or the longitudinal direction is 1300 μm or more and 1800 μm or less. Also, the difference between the longitudinal length and the short hand length of the submount 30 is 500 μm or more and 900 μm or less.

[0092] For example, the thickness of the submount 30 (width in the direction perpendicular to the upper surface 31A) is 200 μm or more and 400 μm or less. Also, for example, the thickness of the substrate 32A is 140 μm or more and 260 μm or less. Also, for example, the thickness of the upper metal member 32B is 30 μm or more and 70 μm or less. Also, for example, the thickness of the lower metal member 32C is 30 μm or more and 70 μm or less. Also, for example, the thickness of the wiring layer 33 is 1 μm or more and 5 μm or less.

[0093] (Reflective member 40) The reflective member 40 has a lower surface 41A and a light reflecting surface 41B that reflects light. Also, the light reflecting surface 41B is inclined with respect to the lower surface 41A. The straight line connecting the lower end and the upper end of the light reflecting surface 41B is inclined with respect to the lower surface 41A. The angle at which the light reflecting surface 41B is inclined with respect to the lower surface 41A is referred to as the inclination angle of the light reflecting surface 41B.

[0094] The light reflecting surface 41B is a flat surface. Note that the light reflecting surface 41B may be a curved surface. The inclination angle of the light reflecting surface 41B is 45 degrees. Note that the inclination angle of the light reflecting surface 41B does not have to be 45 degrees.

[0095] For the main material of the reflective member 40, glass, metal, etc. can be used. It is preferable to use a material that is resistant to heat as the main material of the reflective member 40. For the main material, for example, glass such as quartz or BK7 (borosilicate glass), metal such as Al, etc. can be used. The reflective member 40 can also be formed using Si as the main material.

[0096] If the main material is a reflective material such as Al, the light reflecting surface 41B can be formed from the main material. Instead of forming the light reflecting surface 41B from the main material, the general shape of the reflective member 40 can be formed from the main material, and the light reflecting surface 41B can be formed on the surface of the general shape. In this case, the light reflecting surface 41B can be formed using, for example, a metal layer such as Ag, Al, or a dielectric multilayer film such as Ta2O5 / SiO2, TiO2 / SiO2, Nb2O5 / SiO2.

[0097] The light reflecting surface 41B has a reflectance of 90% or more with respect to the peak wavelength of the light irradiated onto the light reflecting surface 41B. Further, this reflectance may be 95% or more. Also, this reflectance can be set to 99% or more. The light reflectance is 100% or less or less than 100%.

[0098] (Protective element 50) The protective element 50 has an upper surface 51A, a lower surface 51B, and one or more side surfaces 51C. The shape of the protective element 50 is a rectangular parallelepiped. Note that the shape of the protective element 50 does not have to be a rectangular parallelepiped.

[0099] The protective element 50 is for preventing a specific element (for example, a semiconductor laser element) from being destroyed due to an excessive current flowing through it. Examples of the protective element 50 include a Zener diode. Also, as the Zener diode, one formed of Si can be adopted.

[0100] (Wiring 60) The wiring 60 is a linear conductive material with both ends being junction parts. The junction parts at both ends become the junction parts with other components. The wiring 60 is used for electrical connection between two components. The wiring 60 is, for example, a metal wire. For the metal, for example, gold, aluminum, silver, copper, etc. can be used.

[0101] (Optical member 70) The optical member 70 has an upper surface 71A, a lower surface 71B, and one or more side surfaces 71C. The optical member 70 exerts an optical action on the light incident on the optical member 70. Examples of the optical action exerted on the light by the optical member 70 include condensing, collimating, diffusing, polarizing, diffracting, multiplexing, light guiding, reflecting, wavelength conversion, etc.

[0102] The optical member 70 has an optical action surface that provides an optical action. The upper surface 71A, the lower surface 71B, or the side surface 71C can be the optical action surface. Alternatively, it may have an optical action surface at a position different from the upper surface 71A, the lower surface 71B, and the side surface 71C. For example, the optical action surface may be formed inside the optical member 70 instead of on its surface.

[0103] The optical member 70 may have one or more lens surfaces 71D. The lens surface 71D is the optical action surface of the optical member 70. Note that the optical member 70 having the lens surface 71D may be referred to as a lens member. The light emitted from the optical member 70 passing through the lens surface 71D is given an optical action of focusing, diffusing, or collimating by the optical member 70. For example, the optical member 70 is a collimating lens that collimates the light incident on the optical member 70 and emits it.

[0104] One or each of the lens surfaces 71D is provided on the upper surface 71A side. Note that the lens surface 71D may be provided on the lower surface 71B side. The upper surface 71A and the lower surface 71B are flat. One or each of the lens surfaces 71D intersects the upper surface 71A. In a top view, one or each of the lens surfaces 71D is surrounded by the upper surface 71A.

[0105] In a top view, the outer shape of the optical member 70 is rectangular. Note that the outer shape of the optical member 70 in a top view does not have to be rectangular. The lower surface 71B is flat. No lens surface 71D is formed on the lower surface 71B side of the optical member 70. The shape of the lower surface 71B is rectangular. Note that the shape of the lower surface 71B does not have to be rectangular.

[0106] In the optical member 70, the portion overlapping the lens surface 71D in a top view is defined as the lens portion 72A. In the optical member 70, the portion overlapping the upper surface 71A in a top view is defined as the non-lens portion 72B. The lower surface 71B has a region constituting the lower surface of one or each of the lens portions 72A and a region constituting the lower surface of the non-lens portion 72B.

[0107] The optical member 70 may have a plurality of lens surfaces 71D formed continuously in one direction. In a top view, the direction in which the plurality of lens surfaces 71D are arranged is referred to as the lens connection direction. In the illustrated optical member 70, the connection direction is the same as the X direction.

[0108] The plurality of lens surfaces 71D are formed such that the vertices of each lens surface 71D are provided on a straight line. This virtual straight line connecting the vertices is parallel to the lower surface 71B of the optical member 70. Here, the parallelism includes a difference within ±5 degrees.

[0109] Some or all of the plurality of lens surfaces 71D may have the same curvature, and the curvature of two or more lens surfaces 71D may be the same. All of the plurality of lens surfaces 71D may have the same curvature.

[0110] The optical member 70 has light transmissibility. The transmittance of the optical member 70 with respect to the peak wavelength of the light incident on the optical member 70 is 80% or more. The optical member 70 may have a light-transmissive region and a region that does not have light transmissibility (hereinafter referred to as a non-light-transmissive region). In the non-light-transmissive region, the transmittance with respect to the peak wavelength of the light incident on the optical member 70 is 50% or less. The optical member 70 can be formed using, for example, glass such as BK7.

[0111] Next, the light-emitting device 1 will be described.

[0112] (Light-emitting device 1) The light-emitting device 1 includes a plurality of semiconductor laser elements 20 and a plurality of submounts 30. The plurality of semiconductor laser elements 20 include a first semiconductor laser element 20A and a second semiconductor laser element 20B having a resonator direction length larger than that of the first semiconductor laser element 20A. The light-emitting device 1 may include a plurality of semiconductor laser elements 20 including one or more first semiconductor laser elements 20A and one or more second semiconductor laser elements 20B.

[0113] The length of the second semiconductor laser element 20B in the resonator direction is larger than the length of the first semiconductor laser element 20A in the resonator direction by 200 μm or more and 700 μm or less. 1 Or the length of each second semiconductor laser element 20B in the resonator direction is larger than the length of any first semiconductor laser element 20A in the resonator direction by 200 μm or more and 700 μm or less. By adjusting the length in the resonator direction, the output of the light emitted from the semiconductor laser element 20 can be adjusted.

[0114] The emission peak wavelength of the light emitted from the first semiconductor laser element 20A and the emission peak wavelength of the light emitted from the second semiconductor laser element 20B differ by 30 nm or more. 1 Or the emission peak wavelength of the light emitted from each first semiconductor laser element 20A differs by 30 nm or more from the emission peak wavelength of the light emitted from any second semiconductor laser element 20B. Note that the difference between the emission peak wavelength of the light emitted from the first semiconductor laser element 20A and the emission peak wavelength of the light emitted from the second semiconductor laser element 20B may be less than 30 nm. Also, this difference may be 10 nm or less.

[0115] 1 Or each first semiconductor laser element 20A emits light with an emission peak wavelength of the first wavelength ±15 nm. 1 Or each second semiconductor laser element 20B emits light with an emission peak wavelength of the second wavelength ±15 nm.

[0116] 1 Or each first semiconductor laser element 20A emits light of the first color. 1 Or each second semiconductor laser element 20B emits light of the second color. The first color and the second color can be different. Note that the color of the light emitted from the first semiconductor laser element 20A and the color of the light emitted from the second semiconductor laser element 20B may be the same.

[0117] Each semiconductor laser element 20 is mounted on the submount 30. Each semiconductor laser element 20 is placed on the wiring layer 33 of the submount 30. Each semiconductor laser element 20 is placed in the first region 33A of the wiring layer 33.

[0118] A semiconductor laser element 20 is placed on each of a plurality of submounts 30. One semiconductor laser element 20 is placed on one submount 30. Here, among the plurality of submounts 30, the submount 30 on which the first semiconductor laser element 20A is placed is called the first submount 30A, and the submount 30 on which the second semiconductor laser element 20B is placed is called the second submount 30B for distinction.

[0119] The first submount 30A and the second submount 30B are submounts 30 having the same shape. In a top view, the wiring layer 33 of the first submount 30A and the wiring layer 33 of the second submount 30B have the same shape.

[0120] Regarding each semiconductor laser element 20, the difference between the length in the direction parallel to the light emitting surface 22 of the first semiconductor laser element 20A and the length in the direction parallel to the light emitting surface 22 of the second semiconductor laser element 20B is 0 or more and 100 μm or less. By setting it to 100 μm or less, when the first semiconductor laser element 20A and the second semiconductor laser element 20B are respectively mounted on the submount 30 of the same design, the difference in the margin space of the mounting surface can be suppressed.

[0121] However, the length of the first semiconductor laser element 20A in the direction parallel to the light emitting surface 22 may be 100 μm or more larger than the length of the light emitting surface 22 of any or a specific second semiconductor laser element 20B in the direction parallel to the light emitting surface 22.

[0122] For example, the light emitting device 1 may include one or more first semiconductor laser elements 20A in which the length in the resonator direction is 200 μm or less smaller than that of the second semiconductor laser element 20B, and the length in the direction parallel to the light emitting surface 22 is larger than that of the second semiconductor laser element 20B in the range of 0 μm or more and 100 μm or less.

[0123] Here, the midpoint of the width of the light emitting surface 22 in the direction parallel to the light emitting surface 22 in top view is denoted as the midpoint MP4, and the midpoint of the width of the submount 30 in the direction parallel to the light emitting surface 22 in top view is denoted as the midpoint MP5. In the illustrated light emitting device 1, the short side direction of the submount 30 and the direction parallel to the light emitting surface 22 in top view are the same direction.

[0124] Regarding the plurality of semiconductor laser elements 20, the distance from the midpoint MP4 of the first semiconductor laser element 20A to the midpoint MP5 of the first submount 30A on which the first semiconductor laser element 20A is mounted is the same as the distance from the midpoint MP4 of the second semiconductor laser element 20B to the midpoint MP5 of the second submount 30B on which the second semiconductor laser element 20B is mounted. Here, the same includes a difference within ±50 μm. By making these distances the same, it becomes easier to mount the first semiconductor laser element 20A and the second semiconductor laser element 20B on the submount 30 of the same design.

[0125] Regarding the plurality of semiconductor laser elements 20, the distance from the midpoint MP4 of the first semiconductor laser element 20A to the midpoint MP2 of the first submount 30A on which the first semiconductor laser element 20A is mounted is the same as the distance from the midpoint MP4 of the second semiconductor laser element 20B to the midpoint MP2 of the second submount 30B on which the second semiconductor laser element 20B is mounted. Here, the same includes a difference within ±50 μm. By making these distances the same, it becomes easier to mount the first semiconductor laser element 20A and the second semiconductor laser element 20B on the submount 30 of the same design.

[0126] One or each semiconductor laser element 20 is arranged such that in top view, the light emitting surface 22 is included in the vicinity of the side of the outer edge of the upper surface 31A. In top view, the light emitting surface 22 of one or each semiconductor laser element 20 is arranged between the side surface 31C of the upper metal member 32B and the side surface 31C of the substrate 32A, each facing the same direction.

[0127] Regarding a plurality of semiconductor laser elements 20, in a top view, the distance from the first side surface 21C1 of the first semiconductor laser element 20A to the side surface 31C of the first submount 30A facing the same direction as the first side surface 21C1 is larger than the distance from the first side surface 21C1 of the second semiconductor laser element 20B to the side surface 31C of the second submount 30B facing the same direction as the first side surface 21C1 within a range of 200 μm or more and 400 μm or less.

[0128] A protective element 50 is placed on one or each of the submounts 30. Here, the protective element 50 placed on the first submount 30A is called the first protective element 50A, and the protective element 50 placed on the second submount 30B is called the second protective element 50B for distinction. The plurality of protective elements 50 includes one or more first protective elements 50A and one or more second protective elements 50B.

[0129] The plurality of submounts 30 includes one or more first submounts 30A on which the first semiconductor laser element 20A and the first protective element 50A are placed, and one or more second submounts 30B on which the second semiconductor laser element 20B and the second protective element 50B are placed.

[0130] In one or each of the submounts 30, the protective element 50 is placed on the wiring layer 33. Each protective element 50 is placed in the second region 33B of the wiring layer 33. The first protective element 50A and the second protective element 50B are protective elements 50 of the same shape. Note that the shape of the first protective element 50A and the shape of the second protective element 50B may be different.

[0131] In a top view, one or each of the first protective elements 50A is not arranged between a first virtual straight line L1 passing through the light emitting surface 22 of the first semiconductor laser element 20A and parallel thereto, and a second virtual straight line L2 passing through the first side surface 21C1 of the first semiconductor laser element 20A and parallel thereto.

[0132] Part or all of one or each of the second protective elements 50B is disposed, in a top view, between a third virtual straight line L3 passing through the light emitting surface 22 of the second semiconductor laser element 20B and parallel thereto, and a fourth virtual straight line L4 passing through the first side surface 21C1 of the second semiconductor laser element 20B and parallel thereto. The second protective element 50B is disposed, in a top view, at a position through which the fourth virtual straight line L4 passes.

[0133] Regarding one or each of the first semiconductor laser elements 20A, in a top view, the midpoint MP4 of the first semiconductor laser element 20A does not coincide with the midpoint MP5 of the first submount 30A on which the first semiconductor laser element 20A is mounted. Regarding one or each of the second semiconductor laser elements 20B, in a top view, the midpoint MP4 of the second semiconductor laser element does not coincide with the midpoint MP5 of the second submount 30B on which the second semiconductor laser element 20B is mounted.

[0134] Thus, even when at least a part of the second protective element 50B is disposed between the third virtual straight line L3 and the fourth virtual straight line L4, by shifting the midpoint MP4 without making it coincide with the midpoint MP5, the second protective element 50B can be stably mounted on the second submount 30B. Thereby, two semiconductor laser elements 20 having different resonator direction lengths from each other can share the same designed submount 30. The sharing of the submount 30 can contribute to an improvement in the productivity of the light emitting device 1.

[0135] One or each of the protective elements 50 is disposed in the region with a larger area when the upper surface 31A of the submount 30 is divided into two regions by a virtual straight line SL2 passing through the midpoint MP1 of the submount 30 and parallel to the longitudinal direction of the submount 30.

[0136] Here, of the two side surfaces 21C intersecting with the light emitting surface 22 of the semiconductor laser element 20, the side surface 21C closer to the protective element 50 is referred to as the second side surface 21C2, and the side surface 21C farther from the protective element 50 is referred to as the third side surface 21C3.

[0137] One or each of the protection elements 50 is disposed on the upper surface 31A of the submount 30 near the side surface 31C of the submount 30 facing the same direction as the first side surface 21C1 and near the side surface 31C of the submount 30 facing the same direction as the second side surface 21C2.

[0138] Regarding one or each of the submounts 30, in the direction parallel to the light emitting surface 22, the distance from the midpoint MP4 of the semiconductor laser element 20 to the side surface 31C of the submount 30 facing the same direction as the third side surface 21C3 is not more than twice the width of the protection element 50. This distance is preferably not less than 260 μm and not more than 420 μm. By setting it to be not less than 260 μm, the heat dissipation property for the semiconductor laser element 20 can be ensured, and by setting it to be not more than 420 μm, the width of the submount 30 in the direction parallel to the light emitting surface 22 can be suppressed.

[0139] Regarding one or each of the second semiconductor laser elements 20B, in a plan view, in the direction parallel to the light emitting surface 22 of the second semiconductor laser element 20B, the midpoint MP4 of the second semiconductor laser element 20B is separated from the midpoint MP5 of the second submount 30B on which the second semiconductor laser element 20B is mounted in the range of not less than 10 μm and not more than 200 μm. By separating the midpoint MP4 from the midpoint MP5 by not less than 10 μm, stable mounting of the semiconductor laser element 20 and the protection element 50 can be achieved. By ensuring that the midpoint MP4 is not separated from the midpoint MP5 by more than 200 μm, sufficient heat dissipation property for the semiconductor laser element 20 can be ensured.

[0140] Regarding one or each of the first semiconductor laser elements 20A, in a plan view, in the direction parallel to the light emitting surface 22 of the first semiconductor laser element 20A, the midpoint MP4 of the first semiconductor laser element 20A is separated from the midpoint MP5 of the first submount 30A on which the first semiconductor laser element 20A is mounted in the range of not less than 10 μm and not more than 200 μm.

[0141] Between the first semiconductor laser element 20A and the second semiconductor laser element 20B, the distance in the direction parallel to the light emitting surface 22 of the semiconductor laser element 20 from the midpoint MP4 of the semiconductor laser element 20 to the midpoint MP5 of the submount 30 on which the semiconductor laser element 20 is mounted is the same. This makes it easier to arrange a plurality of semiconductor laser elements 20 with the light emitting points arranged at equal intervals.

[0142] Regarding the plurality of semiconductor laser elements 20, the distance between the first semiconductor laser element 20A mounted on the first submount 30A and the first protection element 50A is greater than the distance between the second semiconductor laser element 20B mounted on the second submount 30B and the second protection element 50B. Also, regarding the plurality of semiconductor laser elements 20, the distance between the first semiconductor laser element 20A mounted on the first submount 30A and the first protection element 50A in the direction parallel to the light emitting surface 22 of the semiconductor laser element 20 is the same as the distance between the second semiconductor laser element 20B mounted on the second submount 30B and the second protection element 50B. By mounting the semiconductor laser element 20 and the protection element 50 on the submount 30 in this way, two semiconductor laser elements with different resonator lengths in the resonator direction can share the submount 30 with the same design.

[0143] Regarding one or each of the first submounts 30A, in a top view, in the resonator direction, the width of the first submount 30A is greater than the sum of the widths of the first semiconductor laser element 20A and the first protection element 50A mounted on the first submount 30A.

[0144] Regarding one or each of the second submounts 30B, in a top view, in the resonator direction, the width of the second submount 30B is greater than the sum of the widths of the second semiconductor laser element 20B and the second protection element 50B mounted on the second submount 30B. This can suppress an increase in the width of the submount 30 in the resonator direction, contributing to miniaturization of the light emitting device 1.

[0145] A plurality of semiconductor laser elements 20 are arranged in the internal space of the package 10. A plurality of submounts 30 are arranged in the internal space of the package 10. The plurality of semiconductor laser elements 20 are arranged on the first upper surface 11A via the submounts 30. The plurality of submounts 30 are arranged on the first upper surface 11A.

[0146] The plurality of submounts 30 are arranged side by side in the first direction on the first upper surface 11A of the base body 11. The plurality of submounts 30 are arranged side by side such that the interval between adjacent submounts 30 is 300 μm or less. In the illustrated light emitting device 1, the first direction is the same as either the positive direction of X or the negative direction of X.

[0147] The plurality of submounts 30 are arranged side by side in the direction in which the first inner surface 11E1 and the second inner surface 11E2 face each other. Note that the direction in which the two inner surfaces face each other is the direction from one inner surface to the other inner surface. The plurality of submounts 30 are arranged side by side in the direction in which the first side surface 11H1 and the second side surface 11H2 face each other.

[0148] The plurality of semiconductor laser elements 20 are arranged side by side in the first direction on the first upper surface 11A of the base body 11. Each of the plurality of semiconductor laser elements 20 is arranged on the first upper surface 11A via the submount 30.

[0149] The plurality of semiconductor laser elements 20 are arranged at equal intervals in the first direction. The "equal intervals" here include a difference of ±50 μm or less. The plurality of semiconductor laser elements 20 are arranged such that the light emission points of the light emitted from the light emission surface 22 are arranged at equal intervals in the first direction. The "equal intervals" here include a difference of ±50 μm or less.

[0150] The plurality of submounts 30 are arranged at equal intervals in the first direction. The "equal intervals" here include a difference of ±50 μm or less. In each submount 30, the midpoint MP1 of the submount 30 is separated from the midpoint MP2 in the first direction. This makes it easier to arrange the plurality of semiconductor laser elements 20 at equal intervals in the first direction.

[0151] In each semiconductor laser element 20, the midpoint MP4 of the semiconductor laser element 20 is separated from the midpoint MP5 of the submount 30 on which the semiconductor laser element 20 is mounted in the first direction.

[0152] In a top view, in the first direction, the distance from the submount 30 disposed at the position closest to the first side surface 11H1 among the plurality of submounts 30 to the first side surface 11H1 is larger than the distance between adjacent submounts 30 and smaller than the width of the submount 30. By arranging the submounts 30 in this way, more semiconductor laser elements 20 can be arranged in the internal space of the package 10.

[0153] In a top view, in the first direction, the distance from the submount 30 disposed at the position closest to the second side surface 11H2 among the plurality of submounts 30 to the second side surface 11H2 is larger than the distance between adjacent submounts 30 and smaller than the width of the submount 30. By arranging the submounts 30 in this way, more semiconductor laser elements 20 can be arranged in the internal space of the package 10.

[0154] In a top view, in the first direction, the distance from the submount 30 disposed at the position closest to the first side surface 11H1 among the plurality of submounts 30 to the first side surface 11H1 is different from the distance from the submount 30 disposed at the position closest to the second side surface 11H2 among the plurality of submounts 30 to the second side surface 11H2. By arranging the submounts 30 in this way, the plurality of semiconductor laser elements 20 can be arranged so as to be centrosymmetric with respect to the first direction in the internal space of the package 10.

[0155] In the second direction, which is perpendicular to the first direction in the top view, the distance from the side surface 31C of the first submount 30A facing the same direction as the first side surface 21C1 of the first semiconductor laser element 20A to the inner side surface 11E of the base body 11 facing the first side surface 21C1 is smaller than the distance obtained by adding 200 μm to the difference in the resonator direction lengths of the first semiconductor laser element 20A and the second semiconductor laser element 20B. When the first submount 30A is arranged in this way, if a submount is adopted such that the second protective element 50B is placed away from the second semiconductor laser element 20B in the resonator direction, the light emitting surfaces 22 of the first semiconductor laser element 20A and the second semiconductor laser element 20B will be greatly displaced in the resonator direction. Therefore, there is a further advantage in sharing the submount 30 with the same design for the first semiconductor laser element 20A and the second semiconductor laser element 20B as in the light emitting device 1.

[0156] Among the plurality of semiconductor laser elements 20, in the two semiconductor laser elements 20 where the distance in the second direction from the light emitting surface 22 to the light emitting surface 22 is the largest, this distance is 100 μm or less. Alternatively, this distance can be 50 μm or less. Or alternatively, this distance can be 30 μm or less. The light emitting surfaces 22 of the plurality of semiconductor laser elements 20 are arranged so as not to be greatly displaced in the second direction.

[0157] Each of the plurality of semiconductor laser elements 20 emits light in the second direction from the light emitting surface 22. Regarding the plurality of semiconductor laser elements 20, the light traveling along the optical axis emitted from the light emitting surface 22 is the light traveling in the second direction. Each semiconductor laser element 20 emits the light of the FFP with the second direction as the optical axis from the light emitting surface 22.

[0158] The light emitted from the plurality of semiconductor laser elements 20 can be regarded as the collection of the light emitted from each semiconductor laser element 20. Here, the light emitted from each semiconductor laser element 20 with respect to the light emitted from the plurality of semiconductor laser elements 20 is referred to as partial light. The light emitted from the plurality of semiconductor laser elements 20 is composed of a plurality of partial lights.

[0159] In the light-emitting device 1, one or more reflecting members 40 are disposed in the internal space of the package 10. The one or more reflecting members 40 are disposed on the first upper surface 11A. One reflecting member 40 may be disposed for one semiconductor laser element 20. In this case, the main part of the light in one partial light may be irradiated onto the light reflecting surface 41B of one reflecting member 40. Also, in this case, the main part of the light in two partial lights is not irradiated onto the light reflecting surface 41B of one reflecting member 40.

[0160] The one or more reflecting members 40 reflect the light emitted from the plurality of semiconductor laser elements 20. The light emitted from the plurality of semiconductor laser elements 20 is reflected upward by the light reflecting surface 41B of the one or more reflecting members 40. The light traveling along the optical axis in each partial light is emitted from the light emitting surface 22, reflected by the light reflecting surface 41B, and travels in a direction perpendicular to the first upper surface 11A.

[0161] The plurality of points P1 formed by the points P1 at which the light traveling along the optical axis in each of the plurality of partial lights is irradiated onto the one or more reflecting members 40 are arranged symmetrically with respect to a virtual straight line SL3 that passes through the midpoint between both ends of the base 11 in the first direction and is perpendicular to the first direction in a top view. Thereby, a plurality of partial lights can be emitted from the light-emitting device 1 in a similar line-symmetrical arrangement, facilitating an optical design using the light emitted from the light-emitting device 1.

[0162] In a top view, with respect to the first direction, the distance from the midpoint between both ends of the base 11 in the first direction to the midpoint between both ends EP1 of the one or more reflecting members 40 in the first direction is smaller than the distance from the midpoint between both ends of the base 11 in the first direction to the midpoint between both ends EP2 of the plurality of submounts 30 in the first direction. By designing the mounting position based on the reflecting member 40 rather than the submount 30 with respect to the center of the package 10 in the first direction, an optical design using the light emitted from the light-emitting device 1 becomes easier.

[0163] In the light-emitting device 1, a plurality of wirings 60 are arranged in the internal space of the package 10. The plurality of wirings 60 include two or more wirings 60 that electrically connect a plurality of semiconductor laser elements 20 to the substrate 11. The plurality of wirings 60 include two or more wirings 60 that electrically connect a plurality of protection elements 50 to the substrate 11. By providing the plurality of wirings 60, power can be supplied from an external power source to the plurality of semiconductor laser elements 20 through the substrate 11.

[0164] The plurality of wirings 60 include two or more wirings 60 that electrically connect one or more first semiconductor laser elements 20A to the substrate 11. The plurality of wirings 60 include two or more wirings 60 that electrically connect one or more second semiconductor laser elements 20B to the substrate 11.

[0165] The plurality of wirings 60 include wirings 60 that join with the first wiring portion 12A1. The plurality of wirings 60 include wirings 60 that join with the first wiring portion 12A1 provided on the first inner surface 11E1 side and wirings 60 that join with the first wiring portion 12A1 provided on the second inner surface 11E2 side. The plurality of wirings 60 include wirings 60 that do not join with the first wiring portion 12A1.

[0166] The first wiring portion 12A1 provided on the upper surface 11G of the first step portion 11F1 is an example of the first wiring portion 12A1 provided on the first inner surface 11E1 side, and the first wiring portion 12A1 provided on the upper surface 11G of the second step portion 11F2 is an example of the first wiring portion 12A1 provided on the second inner surface 11E2 side.

[0167] In the light-emitting device 1, the optical member 70 is arranged on the optical path of the light emitted from the plurality of semiconductor laser elements 20. The optical member 70 is fixed to the package 10. The optical member 70 is arranged outside the package 10. The optical member 70 joins with the upper surface 14A.

[0168] The light emitted from the plurality of semiconductor laser elements 20 is subjected to an optical action and then emitted from the optical member 70. For example, each of the plurality of partial lights passes through the lens surface 71D and becomes collimated light, and is then emitted from the optical member 70. Also for example, each of the plurality of partial lights becomes wavelength-converted light and is then emitted from the optical member 70.

[0169] Regarding each of the plurality of partial lights, the light passing through the optical axis passes through the optical axis OA of the lens surface 71D of the optical member 70. Regarding the plurality of partial lights, the light of the main part in each partial light passes through different lens surfaces 71D.

[0170] The optical member 70 is arranged such that the connecting direction is the same as the first direction. The plurality of optical axes OA formed by the optical axes OA of each of the plurality of lens surfaces 71D are arranged symmetrically with respect to a virtual straight line SL3 that passes through the midpoints of both ends of the base body 11 in the first direction and is perpendicular to the first direction in a top view. Alternatively, the same can be said by replacing "optical axis OA" with "vertex". This facilitates optical design using the light emitted from the light emitting device 1.

[0171] In a top view, with respect to the first direction, the distance from the midpoints of both ends of the base body 11 in the first direction to the midpoint of the vertices of the lens surfaces 71D at both ends of the plurality of lens surfaces 71D arranged in the first direction is smaller than the distance from the midpoints of both ends of the base body 11 in the first direction to the midpoint of both ends EP2 of the plurality of submounts 30 in the first direction. By designing the mounting position based on the optical member 70 rather than the submount 30 with respect to the center of the package 10 in the first direction, it becomes easier to perform optical design using the light emitted from the light emitting device 1.

[0172] <Second Embodiment> The light-emitting device 2 according to the second embodiment will be described. FIGS. 1, 2, 6 to 15B are drawings for explaining an exemplary form of the light-emitting device 2. FIG. 1 is a perspective view of the light-emitting device 2. FIG. 2 is a side view of the light-emitting device 2. FIG. 14A is a top view for explaining a first example of the internal structure of the light-emitting device 2. FIG. 14B is a top view of a state where the first semiconductor laser element 20A and the first protection element 50A are mounted on the first submount 30A. FIG. 14C is a side view of a state where the semiconductor laser element 20 and the protection element 50 shown in FIGS. 14B and 15B are mounted on the submount 30. FIG. 15A is a top view for explaining a second example of the internal structure of the light-emitting device 2. FIG. 15B is a top view of a state where the second semiconductor laser element 20B and the second protection element 50B are mounted on the second submount 30B. FIG. 6 is a top view of the submount 30. FIG. 7A is a top view of a state where the first semiconductor laser element 20A and the first protection element 50A in the second example of the internal structure are mounted on the first submount 30A. FIG. 7B is a top view of a state where the second semiconductor laser element 20B and the second protection element 50B in the first example of the internal structure are mounted on the second submount 30B. FIG. 8 is a side view of a state where the semiconductor laser element 20 and the protection element 50 shown in FIGS. 7A and 7B are mounted on the submount 30. FIG. 9 is a perspective view of the package 10. FIG. 10 is a cross-sectional view of the package 10 taken along the X-X cross-sectional line in FIG. 9. FIG. 11 is a top view of the base 11. FIG. 12 is a bottom view of the base 11. FIG. 13 is a cross-sectional view of the base 11 taken along the XIII-XIII cross-sectional line in FIG. 11.

[0173] Among the descriptions of the light-emitting device 1 and each component according to the first embodiment described above, all the contents except for the contents that can be said to be contradictory from the drawings of FIGS. 1, 2, 6 to 15B related to the light-emitting device 2 are also applicable as descriptions of the light-emitting device 2. To avoid duplication, all non-contradictory contents will not be repeated here.

[0174] (Light-emitting device 2) In the light-emitting device 2, among the first submount 30A and the second submount 30B, the protection element 50 placed on one of the submounts 30 is placed on the first side surface 21C1 side of the semiconductor laser element 20, and the protection element 50 placed on the other submount 30 is placed on the light-emitting surface 22 side of the semiconductor laser element 20.

[0175] In the example of FIG. 14A, the first protection element 50A placed on the first submount 30A is placed on the light-emitting surface 22 side of the first semiconductor laser element 20A, and the second protection element 50B placed on the second submount 30B is placed on the first side surface 21C1 side of the second semiconductor laser element 20B. In the example of FIG. 15A, the first protection element 50A placed on the first submount 30A is placed on the first side surface 21C1 side of the first semiconductor laser element 20A, and the second protection element 50B placed on the second submount 30B is placed on the light-emitting surface 22 side of the second semiconductor laser element 20B.

[0176] In the example of FIG. 14A, one or each of the first protection elements 50A is arranged between a first virtual straight line L1 passing through the light-emitting surface 22 of the first semiconductor laser element 20A and parallel thereto, and a second virtual straight line L2 passing through the first side surface 21C1 of the first semiconductor laser element 20A and parallel thereto, in a top view.

[0177] In the example of FIG. 14A, one or each of the first protection elements 50A is arranged on the upper surface 31A of the first submount 30A in the vicinity of the side surface 31C of the first submount 30A facing the same direction as the light-emitting surface 22 and in the vicinity of the side surface 31C of the first submount 30A facing the same direction as the third side surface 21C3.

[0178] In the example of FIG. 15A, one or each of the second protection elements 50B is arranged on the upper surface 31A of the second submount 30B in the vicinity of the side surface 31C of the second submount 30B facing the same direction as the light-emitting surface 22 and in the vicinity of the side surface 31C of the second submount 30B facing the same direction as the third side surface 21C3.

[0179] In the example of FIG. 14A, regarding a plurality of semiconductor laser elements 20, the distance between the first semiconductor laser element 20A placed on the first submount 30A and the first protection element 50A is the same as the distance between the second semiconductor laser element 20B placed on the second submount 30B and the second protection element 50B.

[0180] Among the plurality of submounts 30, except for the first submount 30A and the second submount 30B which are arranged adjacent to each other, they are arranged at equal intervals in the first direction. The distance between the adjacent first submount 30A and the second submount 30B is larger than the distance between the first submounts 30A arranged adjacent to each other. The distance between the adjacent first submount 30A and the second submount 30B is larger than the distance between the second submounts 30B arranged adjacent to each other.

[0181] In each first submount 30A, the midpoint MP1 of the first submount 30A is separated from the midpoint MP2 in the first direction, and in each second submount 30B, the midpoint MP1 of the second submount 30B is separated from the midpoint MP2 in the direction opposite to the first direction. In the example of FIG. 14A, the first direction is the same as the negative direction of X, and in the example of FIG. 15A, the first direction is the same as the positive direction of X.

[0182] In each first semiconductor laser element 20A, the midpoint MP4 of the first semiconductor laser element 20A is separated from the midpoint MP5 of the first submount 30A on which this first semiconductor laser element 20A is placed in the first direction, and in each second semiconductor laser element 20B, the midpoint MP4 of the second semiconductor laser element 20B is separated from the midpoint MP5 of the second submount 30B on which this second semiconductor laser element 20B is placed in the direction opposite to the first direction. In the example of FIG. 14A, the first direction is the same as the negative direction of X, and in the example of FIG. 15A, the first direction is the same as the positive direction of X.

[0183] In a top view, in a first direction, the distance from the submount 30 disposed at the position closest to the first side surface 11H1 among the plurality of submounts 30 to the first side surface 11H1 is the same as the distance from the submount 30 disposed at the position closest to the second side surface 11H2 among the plurality of submounts 30 to the second side surface 11H2. By arranging the submounts 30 in this way, the plurality of semiconductor laser elements 20 can be arranged so as to be centrosymmetric with respect to the first direction in the internal space of the package 10.

[0184] <Third Embodiment> The light-emitting module 901 according to the third embodiment will be described. FIGS. 1 to 3, FIGS. 6 to 13, and FIGS. 16 to 19 are drawings for explaining an exemplary form of the light-emitting module 901. FIG. 16 is a perspective view of the light-emitting module 901. FIG. 1 is a perspective view of the first light-emitting device 1A and the second light-emitting device 1B. FIG. 2 is a side view of the first light-emitting device 1A and the second light-emitting device 1B. FIG. 3 is a cross-sectional view of the first light-emitting device 1A and the second light-emitting device 1B taken along the III-III cross-sectional line of FIG. 1. FIG. 17A is a top view for explaining the internal structure of the first light-emitting device 1A. FIG. 17B is a top view of the state in which the wiring 60 is removed from FIG. 17A. FIG. 17C is a top view for explaining the internal structure of the second light-emitting device 1B. FIG. 17D is a top view of the state in which the wiring 60 is removed from FIG. 17C. FIG. 6 is a top view of the submount 30. FIG. 7A is a top view of a state in which the first semiconductor laser element 20A and the first protective element 50A are mounted on the first submount 30A. FIG. 7B is a top view of a state in which the second semiconductor laser element 20B and the second protective element 50B are mounted on the second submount 30B. FIG. 8 is a side view of a state in which the semiconductor laser element 20 and the protective element 50 are mounted on the submount 30. FIG. 9 is a perspective view of the package 10. FIG. 10 is a cross-sectional view of the package 10 taken along the X-X cross-sectional line of FIG. 9. FIG. 11 is a top view of the base 11. FIG. 12 is a bottom view of the base 11. FIG. 13 is a cross-sectional view of the base 11 taken along the XIII-XIII cross-sectional line of FIG. 11. FIG. 18 is a top view of the wiring board 101. In FIG. 18, the first connection region 101R1 and the second connection region 101R2 are each hatched. FIG. 19 is a top view for explaining the internal structure of the first light-emitting device 1A and the second light-emitting device 1B in the light-emitting module 901.

[0185] The light-emitting module 901 includes a plurality of components. The plurality of components included in the light-emitting module 901 include a first light-emitting device 1A, a second light-emitting device 1B, a wiring board 101, a connector 201, and a thermistor 301.

[0186] Note that the light-emitting module 901 may also include other components. For example, the light-emitting module 901 may include a light-emitting device different from the first light-emitting device 1A and the second light-emitting device 1B. Also, the light-emitting module 901 may not include some of the plurality of components listed here.

[0187] Among the descriptions of the light-emitting device 1 and each component according to the above-described first embodiment, all the contents excluding the contents that can be said to be contradictory from the drawings of FIGS. 1 to 3, FIGS. 6 to 13, and FIGS. 16 to 19 related to the light-emitting module 901 are also applicable as descriptions of the first light-emitting device 1A and the second light-emitting device 1B. To avoid duplication, all non-contradictory contents will not be repeated here.

[0188] (First light-emitting device 1A and second light-emitting device 1B) Both the first light-emitting device 1A and the second light-emitting device 1B include a plurality of components. The plurality of components included in each light-emitting device include a package 10, 1 or a plurality of semiconductor laser elements 20, 1 or a plurality of submounts 30, 1 or a plurality of reflection members 40, 1 or a plurality of protection elements 50, a plurality of wirings 60, and an optical member 70.

[0189] The plurality of semiconductor laser elements 20 included in the first light-emitting device 1A include a plurality of first semiconductor laser elements 20A. The plurality of semiconductor laser elements 20 included in the second light-emitting device 1B include a plurality of second semiconductor laser elements 20B. The first light-emitting device 1A includes a plurality of first submounts 30A, and the second light-emitting device 1B includes a plurality of second submounts 30B. Also, the first light-emitting device 1A includes a plurality of first protection elements 50A, and the second light-emitting device 1B includes a plurality of second protection elements.

[0190] The plurality of semiconductor laser elements 20 included in the first light-emitting device 1A are composed of a plurality of first semiconductor laser elements 20A. Therefore, the first light-emitting device 1A does not include a second semiconductor laser element 20B. Further, the plurality of semiconductor laser elements 20 included in the second light-emitting device 1B are composed of a plurality of second semiconductor laser elements 20B. The second light-emitting device 1B does not include a first semiconductor laser element 20A. Note that the first light-emitting device 1A may include a second semiconductor laser element 20B. Also, the second light-emitting device 1B may include a first semiconductor laser element 20A.

[0191] The first light-emitting device 1A and the second light-emitting device 1B include packages 10 having the same outer shape. The first light-emitting device 1A and the second light-emitting device 1B include substrates 11 having the same outer shape.

[0192] The number of first semiconductor laser elements 20A included in the first light-emitting device 1A is the same as the number of second semiconductor laser elements 20B included in the second light-emitting device 1B. By sharing submounts 30 having the same shape for packages 10 having the same outer shape, it becomes easier to mount the same number of semiconductor laser elements 20 on the first light-emitting device 1A and the second light-emitting device 1B.

[0193] (Wiring board 101) The wiring board 101 has an upper surface 101A, a lower surface 101B, and one or more side surfaces 101C. The wiring board 101 has a plate-like shape. In a top view, the outer edge shape of the wiring board 101 is rectangular. This rectangle can be a rectangle having a long side and a short side. In the illustrated package 10, the short side direction of this rectangle is the same direction as the X direction, and the long side direction is the same direction as the Y direction.

[0194] The wiring board 101 has a heat dissipation part 101D, an electrode part 101E, and an insulating part 101F. The heat dissipation part 101D functions as a heat dissipation path for heat generated from other components mounted on the wiring board 101. The electrode part 101E is electrically connected to other components mounted on the wiring board 101.

[0195] The insulating part 101F insulates the heat radiating part 101D and the electrode part 101E. The insulating part 101F is provided in the wiring board 101 to insulate the electrical connection between the heat radiating part 101D and the electrode part 101E.

[0196] One or more through holes 101H are provided in the wiring board 101. The one or more through holes 101H include through holes 101H for fixing the wiring board 101 to other members (components). For example, a screw is inserted into the through hole 101H to fix the wiring board 101 to other members. The one or more through holes 101H include through holes 101H used to determine the position when the wiring board 101 is fixed to other members.

[0197] For the heat radiating part 101D, a metal material can be used as the main material. For example, a single metal such as Cu, Ag, Al, Ni, Rh, Au, Ti, Pt, Pd, Mo, Cr, W, etc., or an alloy containing these metals can be used as the main material of the heat radiating part 101D. The heat radiating part 101D is preferably formed of a material with excellent heat dissipation performance. The heat radiating part 101D can be formed to contain 95% by mass or more of copper.

[0198] For the electrode part 101E, a metal material can be used as the main material. For example, a single metal such as Cu, Ag, Al, Ni, Rh, Au, Ti, Pt, Pd, Mo, Cr, W, etc., or an alloy containing these metals can be used as the main material of the electrode part 101E.

[0199] The insulating part 101F is formed of an insulating material. For example, for the insulating part 101F, polyimide can be used as the main material. Also, for example, for the insulating part 101F, one or more glass cloths are impregnated with a thermosetting insulating resin such as an epoxy resin, and glass epoxy or liquid crystal polymer obtained by curing this thermosetting insulating resin can be used.

[0200] (Connector 201) The connector 201 has an insertion port into which a connector cable is inserted.

[0201] (Thermistor 301) The thermistor 301 can be used as an element for measuring temperature.

[0202] (Light-emitting module 901) In the light-emitting module 901, the first light-emitting device 1A and the second light-emitting device 1B are mounted on the wiring board 101. The wiring board 101 can be said to be an example of a mounting board on which the first light-emitting device 1A and the second light-emitting device 1B are mounted.

[0203] The first light-emitting device 1A and the second light-emitting device 1B are respectively disposed on the upper surface 101A. The first light-emitting device 1A and the second light-emitting device 1B are respectively joined to the electrode portion 101E via a conductive bonding material. Thereby, the first light-emitting device 1A and the second light-emitting device 1B are electrically connected to the wiring board 101.

[0204] The wiring board 101 has a first connection region 101R1 and a second connection region 101R2 each including an electrode portion 101E. The electrode portion 101E included in the first connection region 101R1 and the electrode portion 101E included in the second connection region 101R2 do not overlap.

[0205] In a top view, the first connection region 101R1 and the second connection region 101R2 have the same shape. Both regions are rectangular in a top view.

[0206] Either the first light-emitting device 1A or the second light-emitting device 1B is disposed in the first connection region 101R1. Either the first light-emitting device 1A or the second light-emitting device 1B is disposed in the second connection region 101R2. The first light-emitting device 1A can also be disposed in each of the first connection region 101R1 and the second connection region 101R2. Further, the above-described light-emitting device 1 or light-emitting device 2 can also be disposed in the first connection region 101R1 or the second connection region 101R2. In the illustrated light-emitting module 901, the first light-emitting device 1A is disposed in the first connection region 101R1, and the second light-emitting device 1B is disposed in the second connection region 101R2.

[0207] The first connection region 101R1 can be defined as the smallest rectangular region including the electrode portion 101E that joins the light-emitting device disposed in the first connection region 101R1, within the electrode portion 101E partitioned by the insulating portion 101F in a top view. The second connection region 101R2 can be defined as the smallest rectangular region including the electrode portion 101E that joins the light-emitting device disposed in the second connection region 101R2, within the electrode portion 101E partitioned by the insulating portion 101F in a top view. The two hatched regions shown in FIG. 18 indicate the first connection region 101R1 and the second connection region 101R2 according to this definition.

[0208] The first connection region 101R1 can be defined as the smallest rectangular region including the region that joins the light-emitting device disposed in the first connection region 101R1, and the second connection region 101R2 can be defined as the smallest rectangular region including the region that joins the light-emitting device disposed in the second connection region 101R2.

[0209] In the wiring substrate 101, the first connection region 101R1 and the second connection region 101R2 are arranged side by side. The first connection region 101R1 and the second connection region 101R2 having the same shape are arranged side by side in the same direction.

[0210] In the light-emitting module 901, the first light-emitting device 1A and the second light-emitting device 1B are respectively arranged on the wiring substrate 101 such that the first direction is perpendicular to the direction in which the first connection region 101R1 and the second connection region 101R2 are arranged side by side.

[0211] In the light-emitting module 901, the first light-emitting device 1A and the second light-emitting device 1B are oriented 180 degrees differently in a top view. The first light-emitting device 1A is arranged such that the reflecting member 40 is closer to the second light-emitting device 1B than the first semiconductor laser element 20A in the first light-emitting device 1A. The second light-emitting device 1B is arranged such that the reflecting member 40 is closer to the first light-emitting device 1A than the second semiconductor laser element 20B in the second light-emitting device 1B.

[0212] Since a plurality of irradiation points P1 or a plurality of optical axes OA are arranged symmetrically with respect to the virtual straight line SL3, even when the first light emitting device 1A and the second light emitting device 1B are arranged in directions different from each other by 180 degrees, each partial light can be aligned and emitted. That is, regardless of whether the first light emitting device 1A and the second light emitting device 1B are arranged and mounted in the same direction or arranged facing each other, the emission positions of the light in the X direction can be aligned, so that the deviation of the light emission position can be reduced.

[0213] Thus, in the form of a light emitting module in which a plurality of light emitting devices are mounted on a mounting substrate, even if one light emitting device includes two semiconductor laser elements having different lengths in the resonator length direction, or each light emitting device includes semiconductor laser elements having different lengths in the resonator direction from each other, the same designed submount can be shared.

[0214] In addition, the merit of sharing such a submount is not limited to the form of a light emitting module, and can be enjoyed by any implementer who manufactures or transfers a plurality of light emitting devices including the first light emitting device 1A and the second light emitting device 1B. At this time, the first light emitting device 1A and the second light emitting device 1B may be transferred to the same customer or different customers. In addition, the plurality of light emitting devices manufactured or transferred by the implementer may include the light emitting device 1 and the light emitting device 2, the light emitting device 1 and the first light emitting device 1A, the light emitting device 1 and the second light emitting device 1B, the light emitting device 2 and the first light emitting device 1A, or the light emitting device 2 and the second light emitting device 1B.

[0215] As described above, each embodiment of the present invention has been explained. However, the light-emitting device and the light-emitting module according to the present invention are not strictly limited to the light-emitting device or the light-emitting module of each embodiment. That is, the present invention can be realized without being limited to the outer shape and structure of the light-emitting device or the light-emitting module disclosed by each embodiment. The present invention can be applied without necessarily including all the components. For example, when some of the components of the light-emitting device or the light-emitting module disclosed by the embodiment are not described in the claims, regarding some of those components, the freedom of design by those skilled in the art such as substitution, omission, deformation of the shape, and change of the material is recognized, and it is specified that the invention described in the claims is applied thereon.

[0216] Through the content described so far in this specification, the following technical matters are disclosed. (Item 1) A plurality of semiconductor laser elements each having a light-emitting surface and a first side surface that is a surface opposite to the light-emitting surface, A plurality of protective elements including a first protective element and a second protective element, A plurality of submounts each having a wiring layer having a first region on which the semiconductor laser element is mounted and a second region on which the protective element is mounted, and a mounting surface on which the wiring layer is provided, Comprising, The plurality of semiconductor laser elements include a first semiconductor laser element and a second semiconductor laser element having a resonator direction length larger than that of the first semiconductor laser element, The plurality of submounts include a first submount on which the first semiconductor laser element and the first protective element are mounted, and a second submount on which the second semiconductor laser element and the second protective element are mounted, In a top view, the first protective element is not disposed between a first virtual straight line passing through the light-emitting surface of the first semiconductor laser element and parallel thereto, and a second virtual straight line passing through the first side surface of the first semiconductor laser element and parallel thereto, In a top view, between a third virtual straight line passing through the light emitting surface of the second semiconductor laser element and being parallel, and a fourth virtual straight line passing through the first side surface of the second semiconductor laser element and being parallel, part or all of the second protective element is disposed. In a top view, in a direction parallel to the light emitting surface of the first semiconductor laser element, the midpoint of the width of the light emitting surface of the first semiconductor laser element does not coincide with the midpoint of the width of the first submount. In a top view, in a direction parallel to the light emitting surface of the second semiconductor laser element, the midpoint of the width of the light emitting surface of the second semiconductor laser element does not coincide with the midpoint of the width of the second submount, the light emitting device. (Item 2) In a top view, at a position where the fourth virtual straight line passes, the second protective element is disposed, the light emitting device according to Item 1. (Item 3) In a top view, in the resonator direction, the width of the first submount is larger than the sum of the widths of the first semiconductor laser element and the first protective element. In a top view, in the resonator direction, the width of the second submount is smaller than the sum of the widths of the second semiconductor laser element and the second protective element, the light emitting device according to Item 1 or 2. (Item 4) In a top view, in a direction parallel to the light emitting surface of the first semiconductor laser element, the midpoint of the width of the light emitting surface of the first semiconductor laser element is separated from the midpoint of the width of the first submount in a range of 10 μm or more and 200 μm or less. In a top view, in a direction parallel to the light emitting surface of the second semiconductor laser element, the midpoint of the width of the light emitting surface of the second semiconductor laser element is separated from the midpoint of the width of the second submount in a range of 10 μm or more and 200 μm or less, the light emitting device according to any one of Items 1 to 3. (Item 5) The semiconductor laser element is mounted on each of the plurality of submounts. The plurality of submounts are arranged side by side such that the interval between adjacent submounts is 300 μm or less, the light emitting device according to any one of Items 1 to 4. (Item 6) The substrate further includes a base body having a first upper surface, a second upper surface located above the first upper surface, and a plurality of inner surfaces between the first upper surface and the second upper surface. The plurality of submounts are arranged side by side in a first direction on the first upper surface. The plurality of inner surfaces include a first inner surface and a second inner surface facing each other in the first direction. In a top view, in the first direction, the distance from the submount disposed closest to the first inner surface among the plurality of submounts to the first inner surface is different from the distance from the submount disposed closest to the second inner surface among the plurality of submounts to the second inner surface. The light-emitting device according to any one of Items 1 to 5. (Item 7) One or a plurality of reflecting members that reflect light emitted from the plurality of semiconductor laser elements. A base body having the plurality of submounts and a first upper surface on which the one or a plurality of reflecting members are disposed. Further comprising. The plurality of submounts are arranged side by side in a first direction on the first upper surface. In a top view, with respect to the first direction, the distance from the midpoint between both ends of the base body in the first direction to the midpoint between both ends of the one or a plurality of reflecting members in the first direction is smaller than the distance from the midpoint between both ends of the base body in the first direction to the midpoint between both ends of the plurality of submounts in the first direction. The light-emitting device according to any one of Items 1 to 6. (Item 8) The light emitted from the plurality of semiconductor laser elements is composed of a plurality of partial lights each of which is the light emitted from the semiconductor laser element. A plurality of points formed by the points where the light traveling along the optical axis in each of the plurality of partial lights is irradiated on the one or a plurality of reflecting members are arranged symmetrically with respect to a virtual straight line passing through the midpoint between both ends of the base body in the first direction and perpendicular to the first direction in a top view. The light-emitting device according to Item 7. (Item 9) A first light-emitting device a second light-emitting device, a mounting substrate on which the first light-emitting device and the second light-emitting device are mounted, and are provided with, the first light-emitting device includes a plurality of first semiconductor laser elements each having a light-emitting surface and a first side surface which is a surface opposite to the light-emitting surface, a plurality of first protection elements, a plurality of first submounts each having a wiring layer having a first region on which the first semiconductor laser element is mounted and a second region on which the first protection element is mounted, and a first mounting surface on which the wiring layer is provided, and are provided with, the second light-emitting device includes a plurality of second semiconductor laser elements each having a light-emitting surface and a second side surface which is a surface opposite to the light-emitting surface, a plurality of second protection elements, a plurality of second submounts each having a wiring layer having a first region on which the second semiconductor laser element is mounted and a second region on which the second protection element is mounted, and a second mounting surface on which the wiring layer is provided, and a second wiring layer provided on the second mounting surface, and are provided with, the shape of the first wiring layer as viewed from a direction perpendicular to the first mounting surface is the same as the shape of the second wiring layer as viewed from a direction perpendicular to the second mounting surface, in a top view, the first protection element is not disposed between a first virtual straight line passing through the light-emitting surface of the first semiconductor laser element and parallel thereto and a second virtual straight line passing through the first side surface of the first semiconductor laser element and parallel thereto, in a top view, a part or all of the second protection element is disposed between a third virtual straight line passing through the light-emitting surface of the second semiconductor laser element and parallel thereto and a fourth virtual straight line passing through the first side surface of the second semiconductor laser element and parallel thereto, in a top view, with respect to a direction parallel to the light-emitting surface of the first semiconductor laser element, the midpoint of the width of the light-emitting surface of the first semiconductor laser element does not coincide with the midpoint of the width of the first submount, In a top view, with respect to the direction parallel to the light emitting surface of the second semiconductor laser element, the midpoint of the width of the light emitting surface of the second semiconductor laser element does not coincide with the midpoint of the width of the second submount, a light emitting module. (Item 10) In a top view, with respect to the direction parallel to the light emitting surface of the first semiconductor laser element, the midpoint of the width of the light emitting surface of the first semiconductor laser element is separated from the midpoint of the width of the first submount by a range of 10 μm or more and 200 μm or less, In a top view, with respect to the direction parallel to the light emitting surface of the second semiconductor laser element, the midpoint of the width of the light emitting surface of the second semiconductor laser element is separated from the midpoint of the width of the second submount by a range of 10 μm or more and 200 μm or less, the light emitting module according to Item 9. (Item 11) The plurality of first submounts are arranged side by side such that the interval between adjacent first submounts is 300 μm or less, The plurality of second submounts are arranged side by side such that the interval between adjacent second submounts is 300 μm or less, the light emitting module according to Item 9 or 10. (Item 12) A plurality of light emitting devices including a first light emitting device and a second light emitting device, The first light emitting device includes A plurality of first semiconductor laser elements each having a light emitting surface and a first side surface which is the surface opposite to the light emitting surface, A plurality of first protection elements, A plurality of first submounts each having a first wiring layer having a first region on which the first semiconductor laser element is mounted and a second region on which the first protection element is mounted, and a first mounting surface on which the first wiring layer is provided, And comprising The second light emitting device includes A plurality of second semiconductor laser elements each having a light emitting surface and a second side surface which is the surface opposite to the light emitting surface, A plurality of second protection elements, A plurality of second submounts each having a second wiring layer with a first region on which the second semiconductor laser element is mounted and a second region on which the second protection element is mounted, and a second mounting surface on which the second wiring layer is provided, comprising the shape of the first wiring layer as viewed in a direction perpendicular to the first mounting surface is the same as the shape of the second wiring layer as viewed in a direction perpendicular to the second mounting surface, in a top view, the first protection element is not disposed between a first virtual straight line passing through the light emitting surface of the first semiconductor laser element and parallel thereto and a second virtual straight line passing through the first side surface of the first semiconductor laser element and parallel thereto, in a top view, a part or all of the second protection element is disposed between a third virtual straight line passing through the light emitting surface of the second semiconductor laser element and parallel thereto and a fourth virtual straight line passing through the first side surface of the second semiconductor laser element and parallel thereto, in a top view, with respect to a direction parallel to the light emitting surface of the first semiconductor laser element, the midpoint of the width of the light emitting surface of the first semiconductor laser element does not coincide with the midpoint of the width of the first submount, in a top view, with respect to a direction parallel to the light emitting surface of the second semiconductor laser element, the midpoint of the width of the light emitting surface of the second semiconductor laser element does not coincide with the midpoint of the width of the second submount, a plurality of light emitting devices. (Item 13) in a top view, with respect to a direction parallel to the light emitting surface of the first semiconductor laser element, the midpoint of the width of the light emitting surface of the first semiconductor laser element is separated from the midpoint of the width of the first submount by a range of 10 μm or more and 200 μm or less, in a top view, with respect to a direction parallel to the light emitting surface of the second semiconductor laser element, the midpoint of the width of the light emitting surface of the second semiconductor laser element is separated from the midpoint of the width of the second submount by a range of 10 μm or more and 200 μm or less, the plurality of light emitting devices according to Item 12. (Item 14) the plurality of first submounts are arranged side by side such that the interval between adjacent first submounts is 300 μm or less, The plurality of second submounts are arranged side by side such that the distance between adjacent second submounts is 300 μm or less, in the plurality of light-emitting devices according to claim 12 or 13. (Claim 15) The first light-emitting device and the second light-emitting device are transferred to the same customer or different customers, in the plurality of light-emitting devices according to any one of claims 12 to 14.

Industrial Applicability

[0217] The light-emitting device and the light-emitting module described in the embodiment can be used in a projector. That is, the projector can be said to be one application form to which the present invention is applied. Note that the present invention is not limited thereto, and can be used in various application forms such as lighting, exposure, in-vehicle headlamps, head-mounted displays, and backlights for other displays.

Explanation of Signs

[0218] 1, 2 Light-emitting device 1A First light-emitting device 1B Second light-emitting device 10 Package 11 Substrate 11A First upper surface 11B Lower surface 11C Second upper surface 11D Outer surface 11E Inner surface 11E1 First inner surface 11E2 Second inner surface 11F Step portion 11F1 First step portion 11F2 Second step portion 11G Upper surface 11H Side surface 11H1 First side surface 11H2 Second side surface 11M Base 11N Frame portion 12A Wiring portion 12A1 First wiring portion 12A2 Second wiring portion 13A Bonding pattern 14 Cover 14A Upper surface 14B Lower surface 14C Side surface 20 Semiconductor laser element 20A First semiconductor laser element 20B Second semiconductor laser element 21A Upper surface 21B Lower surface 21C Side surface 21C1 First side surface 21C2 Second side surface 21C3 Third side surface 22 Light emitting surface 30 Submount 30A First submount 30B Second submount 31A Upper surface 31B Lower surface 31C Side surface 32A Substrate 32B Upper metal member 32C Lower metal member 33 Wiring layer 33A First region 33B Second region 40 Reflective member 41A Lower surface 41B Light reflecting surface 50 Protective element 50A First protective element 50B Second protective element 51A Upper surface 51B Lower surface 51C Side surface 60 Wiring 70 Optical member (lens member) 71A Upper surface 71B Lower surface 71C Side surface 71D Lens surface (optical action surface) 72A Lens part 72B Non - lens part 101 Wiring board 101A Upper surface 101B Lower surface 101C Side surface 101D Heat dissipation part 101E Electrode part 101F Insulating part 101H Through hole 101R1 First connection area 101R2 Second connection area 201 Connector 301 Thermistor 901 Light emitting module

Claims

1. a plurality of semiconductor laser elements each having a light emitting surface and a first side surface which is a surface opposite to the light emitting surface; a plurality of protective elements including a first protective element and a second protective element; a plurality of submounts each having a wiring layer having a first region on which the semiconductor laser element is mounted and a second region on which the protective element is mounted, and a mounting surface on which the wiring layer is provided; comprising: the plurality of semiconductor laser elements include a first semiconductor laser element and a second semiconductor laser element having a resonator direction length larger than that of the first semiconductor laser element; the plurality of submounts include a first submount on which the first semiconductor laser element and the first protective element are mounted, and a second submount on which the second semiconductor laser element and the second protective element are mounted; in a top view, the first protective element is not disposed between a first virtual straight line passing through the light emitting surface of the first semiconductor laser element and being parallel, and a second virtual straight line passing through the first side surface of the first semiconductor laser element and being parallel; in a top view, a part or all of the second protective element is disposed between a third virtual straight line passing through the light emitting surface of the second semiconductor laser element and being parallel, and a fourth virtual straight line passing through the first side surface of the second semiconductor laser element and being parallel; in a direction parallel to the light emitting surface of the first semiconductor laser element in a top view, the midpoint of the width of the light emitting surface of the first semiconductor laser element does not coincide with the midpoint of the width of the first submount; a light emitting device, wherein in a direction parallel to the light emitting surface of the second semiconductor laser element in a top view, the midpoint of the width of the light emitting surface of the second semiconductor laser element does not coincide with the midpoint of the width of the second submount.

2. The light emitting device according to claim 1, wherein the second protective element is disposed at a position through which the fourth virtual straight line passes in a top view.

3. in a top view, in the resonator direction, the width of the first submount is larger than the sum of the widths of the first semiconductor laser element and the first protective element; in a top view, in the resonator direction, the width of the second submount is smaller than the sum of the widths of the second semiconductor laser element and the second protective element, the light emitting device according to claim 1.

4. In a top view, in a direction parallel to the light emitting surface of the first semiconductor laser element, the midpoint of the width of the light emitting surface of the first semiconductor laser element is separated from the midpoint of the width of the first submount by a distance in the range of 10 μm or more and 200 μm or less. The light emitting device according to claim 1, wherein in a top view, in a direction parallel to the light emitting surface of the second semiconductor laser element, the midpoint of the width of the light emitting surface of the second semiconductor laser element is separated from the midpoint of the width of the second submount by a distance in the range of 10 μm or more and 200 μm or less.

5. The semiconductor laser element is mounted on each of the plurality of submounts. The light emitting device according to claim 1, wherein the plurality of submounts are arranged side by side such that the distance between adjacent submounts is 300 μm or less.

6. The light emitting device further includes a substrate having a first upper surface, a second upper surface above the first upper surface, and a plurality of inner surfaces between the first upper surface and the second upper surface. The plurality of submounts are arranged side by side in a first direction on the first upper surface. The plurality of inner surfaces include a first inner surface and a second inner surface facing each other in the first direction. The light emitting device according to claim 1, wherein in a top view, in the first direction, the distance from the submount disposed closest to the first inner surface among the plurality of submounts to the first inner surface is different from the distance from the submount disposed closest to the second inner surface among the plurality of submounts to the second inner surface.

7. One or more reflecting members that reflect light emitted from the plurality of semiconductor laser elements. A substrate having the plurality of submounts and a first upper surface on which the one or more reflecting members are disposed. The light emitting device further includes: The plurality of submounts are arranged side by side in a first direction on the first upper surface. The light emitting device according to claim 1, wherein in a top view, with respect to the first direction, the distance from the midpoints of both ends of the substrate in the first direction to the midpoints of both ends of the one or more reflecting members in the first direction is smaller than the distance from the midpoints of both ends of the substrate in the first direction to the midpoints of both ends of the plurality of submounts in the first direction.

8. The light emitted from the plurality of semiconductor laser elements is composed of a plurality of partial lights each of which is the light emitted from the semiconductor laser element. In the light-emitting device according to claim 7, a plurality of points formed by points at which light traveling along the optical axes of the respective plurality of partial lights is irradiated onto the one or more reflection members are arranged symmetrically with respect to a virtual straight line that passes through the midpoint between both ends of the base body in the first direction and is perpendicular to the first direction, in a top view.

9. A first light-emitting device; A second light-emitting device; A mounting substrate on which the first light-emitting device and the second light-emitting device are mounted; Comprising: The first light-emitting device includes: A plurality of first semiconductor laser elements each having a light-emitting surface and a first side surface that is a surface opposite to the light-emitting surface; A plurality of first protection elements; A plurality of first submounts each having a first wiring layer having a first region on which the first semiconductor laser element is placed and a second region on which the first protection element is placed, and a first mounting surface on which the first wiring layer is provided; Comprising: The second light-emitting device includes: A plurality of second semiconductor laser elements each having a light-emitting surface and a second side surface that is a surface opposite to the light-emitting surface; A plurality of second protection elements; A plurality of second submounts each having a second wiring layer having a first region on which the second semiconductor laser element is placed and a second region on which the second protection element is placed, and a second mounting surface on which the second wiring layer is provided; Comprising: The shape of the first wiring layer as viewed from a direction perpendicular to the first mounting surface is the same as the shape of the second wiring layer as viewed from a direction perpendicular to the second mounting surface. In a top view, the first protection element is not arranged between a first virtual straight line passing through the light-emitting surface of the first semiconductor laser element and parallel thereto and a second virtual straight line passing through the first side surface of the first semiconductor laser element and parallel thereto. In a top view, a part or all of the second protection element is arranged between a third virtual straight line passing through the light-emitting surface of the second semiconductor laser element and parallel thereto and a fourth virtual straight line passing through the first side surface of the second semiconductor laser element and parallel thereto. In a top view, with respect to a direction parallel to the light-emitting surface of the first semiconductor laser element, the midpoint of the width of the light-emitting surface of the first semiconductor laser element does not coincide with the midpoint of the width of the first submount. In a top view, with respect to a direction parallel to the light-emitting surface of the second semiconductor laser element, the midpoint of the width of the light-emitting surface of the second semiconductor laser element does not coincide with the midpoint of the width of the second submount. A light-emitting module.

10. In a top view, with respect to the direction parallel to the light emitting surface of the first semiconductor laser element, the midpoint of the width of the light emitting surface of the first semiconductor laser element is separated from the midpoint of the width of the first submount by a range of 10 μm or more and 200 μm or less. The light emitting module according to claim 9, wherein in a top view, with respect to the direction parallel to the light emitting surface of the second semiconductor laser element, the midpoint of the width of the light emitting surface of the second semiconductor laser element is separated from the midpoint of the width of the second submount by a range of 10 μm or more and 200 μm or less.

11. The plurality of first submounts are arranged side by side such that the distance between adjacent first submounts is 300 μm or less. The light emitting module according to claim 9, wherein the plurality of second submounts are arranged side by side such that the distance between adjacent second submounts is 300 μm or less.

12. A plurality of light emitting devices including a first light emitting device and a second light emitting device, wherein the first light emitting device includes a plurality of first semiconductor laser elements each having a light emitting surface and a first side surface opposite to the light emitting surface, a plurality of first protection elements, and a plurality of first submounts each having a first wiring layer having a first region on which the first semiconductor laser element is mounted and a second region on which the first protection element is mounted, and a first mounting surface on which the first wiring layer is provided. The first light emitting device is provided with wherein the second light emitting device includes a plurality of second semiconductor laser elements each having a light emitting surface and a second side surface opposite to the light emitting surface, a plurality of second protection elements, and a plurality of second submounts each having a second wiring layer having a first region on which the second semiconductor laser element is mounted and a second region on which the second protection element is mounted, and a second mounting surface on which the second wiring layer is provided. The second light emitting device is provided with the shape of the first wiring layer as viewed from a direction perpendicular to the first mounting surface is the same as the shape of the second wiring layer as viewed from a direction perpendicular to the second mounting surface. In a top view, the first protection element is not disposed between a first virtual straight line passing through the light emitting surface of the first semiconductor laser element and parallel thereto, and a second virtual straight line passing through the first side surface of the first semiconductor laser element and parallel thereto. In a top view, between a third virtual straight line passing through the light emitting surface of the second semiconductor laser element and being parallel, and a fourth virtual straight line passing through the first side surface of the second semiconductor laser element and being parallel, part or all of the second protective element is disposed. In a top view, with respect to the direction parallel to the light emitting surface of the first semiconductor laser element, the midpoint of the width of the light emitting surface of the first semiconductor laser element does not coincide with the midpoint of the width of the first submount. In a top view, with respect to the direction parallel to the light emitting surface of the second semiconductor laser element, the midpoint of the width of the light emitting surface of the second semiconductor laser element does not coincide with the midpoint of the width of the second submount, a plurality of light emitting devices.

13. In a top view, with respect to the direction parallel to the light emitting surface of the first semiconductor laser element, the midpoint of the width of the light emitting surface of the first semiconductor laser element is separated in a range of 10 μm or more and 200 μm or less from the midpoint of the width of the first submount. In a top view, with respect to the direction parallel to the light emitting surface of the second semiconductor laser element, the midpoint of the width of the light emitting surface of the second semiconductor laser element is separated in a range of 10 μm or more and 200 μm or less from the midpoint of the width of the second submount, the plurality of light emitting devices according to claim 12.

14. The plurality of first submounts are arranged side by side such that the interval between adjacent first submounts is 300 μm or less. The plurality of second submounts are arranged side by side such that the interval between adjacent second submounts is 300 μm or less, the plurality of light emitting devices according to claim 12.

15. The first light emitting device and the second light emitting device are transferred to the same customer or different customers, the plurality of light emitting devices according to claim 12.

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