Capacitor
The capacitor design with multiple openings, internal and external electrodes, and insulating layers addresses the need for higher capacitance and breakdown voltage, enhancing performance in miniaturized electronic devices.
Patent Information
- Application Number
- JP2024139007
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-12-21
- Filing Date
- 2024-08-20
- Publication Date
- 2025-07-03
AI Technical Summary
There is a growing demand for capacitors with higher capacitance to meet the miniaturization and thinning requirements of electronic devices, yet existing technologies have limitations in achieving this.
The capacitor design includes a structure with multiple openings on a surface, featuring internal electrodes, floating electrodes, and external electrodes, along with insulating layers and dielectric layers, which enhance capacitance and breakdown voltage while minimizing the risk of breakdown.
The design achieves a high capacitance and increased breakdown voltage, reducing the likelihood of breakdown due to mechanical stress, thus meeting the demands of miniaturized electronic devices.
Smart Images
Figure 2025100318000001_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to a capacitor.
Background Art
[0002] As electronic components used in electronic devices, there are capacitors, inductors, piezoelectric elements, varistors, thermistors, etc. Among these ceramic electronic components, multilayer capacitors can be used in various electronic devices due to their advantages of being small in size while ensuring high capacitance and being easy to mount.
[0003] For example, multilayer capacitors can be used for chip-type capacitors that are mounted on the substrates of various electronic products such as liquid crystal displays (LCDs), plasma display panels (PDPs), organic light-emitting diodes (OLEDs), computers, personal mobile terminals, and smartphones, and play a role in charging and discharging electricity.
[0004] In recent years, due to the trend of miniaturization and thinning of electronic products, the demand for capacitors with a larger capacitance than conventional multilayer capacitors has been increasing.
Summary of the Invention
Problems to be Solved by the Invention
[0005] At least one of the embodiments provides a capacitor having a high capacitance.
[0006] However, the problems to be solved by the embodiments of the present invention are not limited to the above-mentioned problems, and are variously extended within the scope of the technical idea included in the present invention.
Means for Solving the Problems
[0007] The capacitor on one side may include a structure having a plurality of openings on a first surface; a first internal electrode located on at least a part of the region where the openings are located; a floating electrode located on a partial region of the first internal electrode; a second internal electrode located on the floating electrode; a first external electrode located on the first surface and connected to the first internal electrode; and a second external electrode located on the first surface and connected to the second internal electrode.
[0008] The structure may be an anodized aluminum.
[0009] The plurality of openings may include a first opening, a second opening, and a third opening, and the first external electrode may face the region where the first opening is located in the direction in which the first surface and the second surface are separated.
[0010] A first opening side cavity may be located in the first opening.
[0011] The first external electrode may be connected to the first internal electrode in the region adjacent to the first opening.
[0012] The first external electrode may be directly in contact with and connected to the first internal electrode.
[0013] It may further include a first opening side insulating layer located to cover the first opening.
[0014] The second external electrode may face the region where the second opening is located in the direction in which the first surface and the second surface are separated.
[0015] The second external electrode may be connected to the second internal electrode in the region adjacent to the second opening.
[0016] The second external electrode may be directly in contact with and connected to the second internal electrode.
[0017] A second opening side cavity may be located in the second opening.
[0018] It may further include a second opening side insulating layer positioned to cover the second opening.
[0019] The floating electrode and the second internal electrode can be positioned on the second opening side insulating layer.
[0020] The plurality of openings include a first opening and a second opening, and the floating electrode and the second internal electrode can be positioned only on the region where the second opening and the third opening are located.
[0021] The plurality of openings include a first opening and a second opening, and the floating electrode and the second internal electrode can be positioned only on the region where the second opening is located.
[0022] The capacitor on the other side includes a structure in which a plurality of openings are located on a first surface; a first internal electrode located in the region between the openings and on the openings on the first surface; a floating electrode located on the first internal electrode; a second internal electrode located on the floating electrode; a first external electrode connected to the first internal electrode and located in the direction in which the first surface of the structure faces; and a second external electrode connected to the second internal electrode and located in the direction in which the first surface of the structure faces.
[0023] The plurality of openings include a first opening, a second opening, and a third opening. In the first opening and the region where the first opening is adjacent to each other, there are no floating electrode and the second internal electrode, and the first external electrode can be connected to the first internal electrode in the region adjacent to the first opening.
[0024] It may further include a second opening side insulating layer positioned to cover the second opening.
[0025] The plurality of the openings include a first opening and a second opening, and in a region where the first opening and the first opening are adjacent to each other, there are no said floating electrodes and said second internal electrodes, and the first external electrode can be connected to the first internal electrode in a region located adjacent to the first opening.
Advantages of the Invention
[0026] According to at least one of the embodiments, a capacitor having a high capacitance can be provided.
Brief Description of the Drawings
[0027]
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Modes for Carrying Out the Invention
[0028] Hereinafter, with reference to the accompanying drawings, various embodiments of the present invention will be described in detail so that those having ordinary knowledge in the technical field to which the present invention pertains can easily implement them. The present invention can be implemented in several different forms and is not limited to the embodiments described herein.
[0029] In order to clearly explain the present invention, parts not related to the explanation are omitted, and the same reference numerals are given to the same or similar components throughout the specification.
[0030] Also, the sizes and thicknesses of the respective configurations shown in the drawings are arbitrarily shown for convenience of explanation, so the present invention is not necessarily limited to what is shown in the drawings. In the drawings, the thickness is enlarged to clearly represent a plurality of layers and regions. And, in the drawings, for convenience of explanation, the thicknesses of some layers and regions are exaggeratedly shown.
[0031] Also, when a part such as a layer, film, region, plate, etc. is said to be "on" or "above" another part, this includes not only the case where it is directly above the other part, but also the case where there is another part in the middle. Conversely, when a part is said to be "directly above" another part, it means that there is no other part between them. Also, being "on" or "above" a reference part means being located above or below the reference part, and does not necessarily mean being located "on" or "above" in the direction opposite to gravity.
[0032] Also, throughout the specification, when a part "includes" a certain component, this means that, unless otherwise stated to the contrary, it does not exclude other components, but can further include other components.
[0033] Also, throughout the specification, "in a plane" means when the target part is viewed from above, and "in a cross-section" means when a cross-section obtained by cutting the target part vertically is viewed from the side.
[0034] FIG. 1 is a drawing showing a capacitor 10 according to an embodiment, FIG. 2 is a drawing showing the structure 100 of FIG. 1, and FIG. 3 is a drawing showing the A region of FIG. 1.
[0035] Referring to FIGS. 1 to 3, a capacitor 10 according to an embodiment can include a structure 100, a first internal electrode 210, a floating electrode 220, a second internal electrode 230, a dielectric layer 240, a first external electrode 410, and a second external electrode 420.
[0036] The structure 100 includes a first surface 100a and a second surface 100b that are located in opposite directions. In FIG. 1, the first surface 100a is shown as being located on the upper side and the second surface 100b is shown as being located on the lower side. Accordingly, the first surface 100a can be used as the upper surface and the second surface 100b can be used as the lower surface. And the direction in which the first surface 100a and the second surface 100b are separated from each other can be defined as the vertical direction. The structure 100 is provided with an insulating material. A plurality of openings 101 are located on the first surface 100a of the structure 100. The opening 101 may be a columnar space that enters from the first surface 100a toward the second surface 100b. As an example, the structure 100 can be porous anodizing aluminum oxide (AAO), and the opening 101 can be formed by fine pores formed in the anodizing aluminum oxide. The aspect ratio of the fine pores can be 2000 or more and 3000 or less. The structure 100 can have a structure in which the lower side of the lower end of the fine pores is blocked.
[0037] The first internal electrode 210 can be located on at least a part of the region where the opening 101 is located. The first internal electrode 210 is located on the inner surface of the opening 101. Also, the first internal electrode 210 is located in the section between adjacent openings 101 on the first surface 100a of the structure 100. Accordingly, the region where the first internal electrode 210 is located on the inner surface of the opening 101 can be connected by the region located on the first surface 100a of the structure 100.
[0038] The opening 101 can include a first opening 101a, a second opening 101b, and a third opening 101c. At least one or more of the plurality of openings 101 are provided as the first opening 101a. Also, at least one or more of the plurality of openings 101 are provided as the second opening 101b. And the remaining openings 101 among the plurality of openings 101 excluding the first opening 101a and the second opening 101b can be provided as the third opening 101c. The region where the first opening 101a is located and the region where the second opening 101b is located are spaced apart from each other, and the third opening 101 is located between the first opening 101a and the second opening 101b.
[0039] The first external electrode 410 can be located in the direction in which the first surface 100a of the structure 100 faces. The first external electrode 410 is located on the first internal electrode 210 in the region where the first opening 101a is located. The first external electrode 410 can face the region where the first opening 101a is located in the vertical direction. The first external electrode 410 is located so as to contact the first internal electrode 210 in the region adjacent to the first opening 101a and can be electrically connected to the first internal electrode 210. The first external electrode 410 may have a single-layer structure or a multi-layer structure.
[0040] The first external electrode 410 can be located on the first internal electrode 210 in the section between the first openings 101a. The first external electrode 410 can cover at least one or more of the first openings 101a. Thereby, a first opening-side cavity (C1) can be formed on the first internal electrode 210 in the first opening 101a located below the first external electrode 410. Also, in the upper region of the first opening 101a, a first opening-side insulating layer 310 can be located outside the region where the first external electrode 410 is located. The first opening-side insulating layer 310 can be located so as to cover the first opening 101a. The first opening-side insulating layer 310 can cover a part of the plurality of first openings 101a. Thereby, a first opening-side cavity (C1) can be formed on the first internal electrode 210 in the first opening 101a located below the first opening-side insulating layer 310. The material of the first opening-side insulating layer 310 may be polyimide or the like.
[0041] The second opening side insulating layer 320 can be located on the first internal electrode 210 in the region where the second opening 101b is located. The second opening side insulating layer 320 can be located so as to cover the second opening 101b. Thereby, a second opening side cavity (C2) can be formed on the first internal electrode 210 in the second opening 101b. The material of the second opening side insulating layer 320 may be polyimide or the like.
[0042] The floating electrode 220 can be located in the region where the second opening 101b is located. The floating electrode 220 can be located on the second opening side insulating layer 320. Thereby, in the region where the second opening 101b is located, the floating electrode 220 is located on the first internal electrode 210, and the second opening side insulating layer 320 can be located between the first internal electrode 210 and the floating electrode 220.
[0043] Also, the floating electrode 220 can be located on the first internal electrode 210 in the region where the third opening 101c is located. In the region where the third opening 101c is located, the floating electrode 220 can be formed in the inner region of the third opening 101c and in the section between the third openings 101c adjacent to each other on the first surface 100a of the structure 100.
[0044] The floating electrode 220 can connect the portion formed on the region where the second opening 101b is located and the portion formed on the region where the third opening 101c is located to each other.
[0045] The floating electrode 220 may not be on the first internal electrode 210 in the region where the first opening 101a is located. That is, the floating electrode 220 may not be formed on the first internal electrode 210 in the region of the first opening 101a and in the region of the first internal electrode 210 between the first openings 101a adjacent to each other on the first surface 100a.
[0046] Also, the floating electrode 220 can be formed of a plurality of layers.
[0047] On the floating electrode 220, a second internal electrode 230 is positioned. That is, the second internal electrode 230 can be positioned on the region where the second opening 101b is located and on the region where the third opening 101c is located. In the region where the third opening 101c is located, the second internal electrode 230 can be formed in the inner region of the third opening 101c and in the section between the third openings 101c adjacent to each other on the second surface 100b of the structure 100. In the third opening 101c, a cavity on the third opening side (C3) can be formed on the second internal electrode 230. In contrast, the second internal electrode 230 may be positioned in a structure that fills the third opening 101c, and there may be no cavity on the third opening side (C3) in the third opening 101c.
[0048] The second internal electrode 230 is not on the first internal electrode 210 in the region where the first opening 101a is located.
[0049] The dielectric layer 240 is positioned only on a partial region of the first internal electrode 210. The dielectric layer 240 can be positioned only on the regions where the second opening 101b and the third opening 101c are located.
[0050] In the regions where the second opening 101b and the third opening 101c are located, the dielectric layer 240 can be positioned between the first internal electrode 210 and the floating electrode 220. In the region where the second opening 101b is located, the dielectric layer 240 can be positioned on the insulating layer 320 on the second opening side. Thereby, in the region where the second opening 101b is located, the dielectric layer 240 can be positioned between the floating electrode 220 and the insulating layer 320 on the second opening side. And in the region where the second opening 101b is located, the insulating layer 320 on the second opening side can be positioned between the first internal electrode 210 and the dielectric layer 240. In the region where the third opening 101c is located, the dielectric layer 240 can be positioned between the first internal electrode 210 and the floating electrode 220.
[0051] Also, when the floating electrode 220 is composed of a plurality of layers, the dielectric layer 240 can be positioned between the floating electrodes 220.
[0052] A dielectric layer 240 is located between the floating electrode 220 and the second internal electrode 230. In the region where the second opening 101b is located, the dielectric layer 240 can be located between the floating electrode 220 and the second internal electrode 230. In the region where the third opening 101c is located, the dielectric layer 240 can be located between the floating electrode 220 and the second internal electrode 230.
[0053] The dielectric layer 240 may not be on the first internal electrode 210 in the region where the first opening 101a is located. That is, in the first opening 101a and on the first internal electrode 210 in the region between the adjacent first openings 101a on the first surface 100a, the dielectric layer 240 may not be formed.
[0054] The second external electrode 420 can be located in the direction in which the first surface 100a of the structure 100 faces. The second external electrode 420 is located at a distance from the first external electrode 410. The second external electrode 420 is located on the second internal electrode 230. The second external electrode 420 is located so as to be in contact with the second internal electrode 230 and can be electrically connected to the second internal electrode 230. The second external electrode 420 is located on the region where the second opening 101b is located and can face the region where the second opening 101b is located in the vertical direction. Thereby, below the second external electrode 420, the second opening side insulating layer 320 and the second opening side cavity (C2) can be located. The second external electrode 420 may have a single-layer structure or a multilayer structure.
[0055] In a capacitor 10 according to an embodiment, most of a first internal electrode 210 and a second internal electrode 230 are located on an opening 101. For convenience, only a part of the opening 101 is shown in FIGS. 1 to 3, but a very large number of nanostructures are located in a structure 100 which is anodizing aluminum oxide (AAO). Thus, with respect to a plane intersecting the direction in which a first surface 100a and a second surface 100b of the structure 100 face each other, the surface areas of the first internal electrode 210 and the second internal electrode 230 are very large compared to the area occupied by the structure 100. As a result, the capacitor 10 according to an embodiment has a very large capacitance compared to its size.
[0056] Also, in a capacitor 10 according to an embodiment, a floating electrode 220 is located between the first internal electrode 210 and the second internal electrode 230. Specifically, the floating electrode 220 is located between the first internal electrode 210 and the second internal electrode 230 on a region where a second opening 101b and a third opening 101c are located. Thus, the voltage difference between the first internal electrode 210 and the second internal electrode 230 is dispersed by the floating electrode 220. Specifically, the voltage difference between the first internal electrode 210 and the floating electrode 220 and the voltage difference between the floating electrode 220 and the second internal electrode 230 generate the voltage difference between the first internal electrode 210 and the second internal electrode 230. Thereby, the capacitor 10 according to an embodiment increases the magnitude of the breakdown voltage and significantly reduces the possibility of occurrence of a breakdown phenomenon.
[0057] Also, in a capacitor 10 according to an embodiment, cavities (C1, C2) can be formed inside the opening 101 located below external electrodes 410, 420. Such cavities (C1, C2) can prevent cracks from occurring in the internal electrodes 210, 230, the dielectric layer 240, etc. due to forces (e.g., vibration, compression) applied to the external electrodes 410, 420 and below the external electrodes 410, 420 during the process of mounting the capacitor 10.
[0058] Figs. 4 to 9 are drawings showing a method for manufacturing the capacitor 10 according to an embodiment.
[0059] Hereinafter, with reference to Figs. 4 to 9, a method for manufacturing the capacitor 10 according to an embodiment will be described.
[0060] Referring to Fig. 4, a substrate (S) for forming the structure 100 is provided. The substrate (S) is provided with a plurality of openings 101 formed therein. The substrate (S) can be provided to have an area capable of accommodating two or more capacitors 10. The substrate (S) is made of anodic aluminum oxide (AAO), and the openings 101 can be fine pores formed by an anodization method. At this time, the openings 101 are provided in a state where the lower sides are blocked. The diameter of the openings 101 may be 50 nm or more and 300 nm or less. The diameter of the openings 101 can be measured at the upper ends of the openings 101.
[0061] Referring to Fig. 5, in the structure 100, a first internal electrode 210 is formed on the region where the openings 101 are located. The first internal electrode 210 is formed on the inner surface of the openings 101. Also, the first internal electrode 210 is formed on the region where the openings 101 are adjacent to each other. Thereby, the first internal electrodes 210 are formed to be connected to each other. The first internal electrode 210 can be formed through a vapor deposition process. For the formation of the first internal electrode 210, chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. can be used. The first internal electrode 210 can be formed with a thickness of several nanometers to several tens of nanometers. The first internal electrode 210 can be formed of TiN or the like.
[0062] Referring to FIG. 6, a first insulating layer (IL1) is formed on the region where the first opening 101a is located, and a second insulating layer (IL2) is formed on the region where the second opening 101b is located. As an example, through a photolithography process, a mask with the regions where the first insulating layer (IL1) and the second insulating layer (IL2) are to be formed on the structure 100 opened can be formed. Then, the first insulating layer (IL1) and the second insulating layer (IL2) can be formed on the structure 100 through the mask. The first insulating layer (IL1) and the second insulating layer (IL2) can be formed through a deposition process. For the formation of the first insulating layer (IL1) and the second insulating layer (IL2), chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. can be used. After that, the mask can be removed through a strip process.
[0063] Referring to FIG. 7, a dielectric layer 240, a floating electrode 220, a dielectric layer 240, and a second internal electrode 230 are sequentially formed on the region where the second opening 101b is located and the region where the third opening 101c is located.
[0064] The dielectric layer 240, the floating electrode 220, another dielectric layer 240, and the second internal electrode 230 are formed together in the region where the second opening 101b is located and the region where the third opening 101c is located. Thereby, the dielectric layer 240, the floating electrode 220, another dielectric layer 240, and the second internal electrode 230 sequentially formed on the region where the second opening 101b is located and the region where the third opening 101c is located are respectively connected to each other.
[0065] The dielectric layer 240, the floating electrode 220, another dielectric layer 240, and the second internal electrode 230 are formed on the second insulating layer (IL2). Also, the dielectric layer 240, the floating electrode 220, another dielectric layer 240, and the second internal electrode 230 are formed on the inner surface of the third opening 101c and in the section between the adjacent third openings 101c.
[0066] The dielectric layer 240 can be formed through a vapor deposition process. For the formation of the dielectric layer 240, chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. can be used. The dielectric layer 240 can be formed of any one of metal oxides such as Al2O3, ZrO2, HfO2. Also, the dielectric layer 240 can be formed of a combination of metal oxides such as Al2O3, ZrO2, HfO2. Further, the dielectric layer 240 can be formed of ZAZ of a ZrO2 - Al2O3 - ZrO2 composite layer. At this time, the thickness of each of the ZrO2, Al2O3, and ZrO2 layers can be 1.9 nm or more and 2.1 nm or less, 0.29 nm or more and 0.31 nm or less, and 1.9 nm or more and 2.1 nm or less.
[0067] The floating electrode 220 can be formed through a vapor deposition process. For the formation of the floating electrode 220, chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. can be used. The floating electrode 220 can be formed of TiN or the like.
[0068] The second internal electrode 230 can be formed through a vapor deposition process. For the formation of the second internal electrode 230, chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. can be used. The second internal electrode 230 can be formed of TiN or the like.
[0069] The second internal electrode 230 is formed in a form that does not completely fill the inside of the third opening 101c, and a third opening side cavity (C3) can be formed on the second internal electrode 230 in the third opening 101c. In contrast, the second internal electrode 230 can be formed to fill the third opening 101c, and there may be no third opening side cavity (C3) in the third opening 101c.
[0070] Inside the first opening 101a, deposition of the dielectric layer 240, the floating electrode 220, another dielectric layer 240, and the second internal electrode 230 is prevented by the first insulating layer (IL1). Inside the first opening 101a located below the first insulating layer (IL1), a first opening side cavity (C1) is formed.
[0071] Inside the second opening 101b, deposition of the dielectric layer 240, the floating electrode 220, another dielectric layer 240, and the second internal electrode 230 is prevented by the second insulating layer (IL2). Inside the second opening 101b located below the second insulating layer (IL2), a second opening side cavity (C2) is formed.
[0072] Referring to FIG. 8, a part of the first insulating layer (IL1) is etched to form the first opening side insulating layer 310. Then, the first internal electrode 210 is exposed to the outside from the region where the first insulating layer (IL1) is etched. The etching process of the first insulating layer (IL1) can be performed after forming a mask with an open etching region through a photolithography process. Also, the second insulating layer (IL2) becomes the second opening side insulating layer 320.
[0073] Referring to FIG. 9, the first external electrode 410 and the second external electrode 420 are formed. The first external electrode 410 can be formed on the first internal electrode 210 exposed to the outside from the region where the first opening 101a is located. The second external electrode 420 can be formed on the second internal electrode 230. The second external electrode 420 can be formed on the region where the second opening 101b is located. As an example, the first external electrode 410 and the second external electrode 420 can have a multilayer structure where a seed layer is formed first and the remaining part is formed on the seed layer. The seed layer can be formed of a metal material such as Ti or Cu. The seed layer can be formed through a sputtering process. The remaining part formed on the seed layer can be formed through a plating process using Cu, Sn, Ag, etc.
[0074] Thereafter, the substrate (S) can be diced such that the regions where the respective capacitors 10 are located are separated from each other. The dicing process can be performed through a blade, a laser, or the like.
[0075] FIG. 10 is a drawing showing a capacitor 20 according to another embodiment.
[0076] Referring to FIG. 10, the capacitor 20 according to another embodiment can include a structure 600, a first internal electrode 710, a floating electrode 720, a second internal electrode 730, a dielectric layer 740, a first external electrode 910, and a second external electrode 920.
[0077] The structure 600 includes a first surface 600a and a second surface 600b that are located in opposite directions to each other. In FIG. 10, the first surface 600a is shown to be located on the upper side and the second surface 600b is shown to be located on the lower side. Accordingly, the first surface 600a can be the upper surface and the second surface 600b can be the lower surface. And the direction in which the first surface 600a and the second surface 600b are separated from each other can be the vertical direction. Since the structure of the structure 600 is the same as or similar to that of the structure 100 of the capacitor 10 according to one embodiment, repeated description will be omitted.
[0078] The first internal electrode 710 is located on the inner surface of the opening 601. Also, the first internal electrode 710 is located in a section between the openings 601 adjacent to each other on the first surface 600a of the structure 600. Thereby, the regions of the first internal electrode 710 located on the inner surface of the opening 601 can be connected to each other by the regions located on the first surface 600a of the structure 600.
[0079] The opening 601 can include a first opening 601a and a second opening 601b. At least one or more of the plurality of openings 601 are provided as the first opening 601a. And the remaining openings 601 among the plurality of openings 601 excluding the first opening 601a can be provided as the second opening 601b.
[0080] The first external electrode 910 can be positioned in the direction of the first surface 600a of the structure 600. The first external electrode 910 is located on the first internal electrode 710 in the region where the first opening 601a is located. The first external electrode 910 can face the region where the first opening 601a is located in the vertical direction. The first external electrode 910 is positioned so as to contact the first internal electrode 710 in the region adjacent to the first opening 601a and can be electrically connected to the first internal electrode 710. The first external electrode 910 may have a single-layer structure or a multilayer structure.
[0081] The first external electrode 910 can be located on the first internal electrode 710 in the section between the first openings 601a. The first external electrode 910 can cover at least one or more of the first openings 601a. Thereby, a first opening-side cavity (C4) can be formed on the first internal electrode 710 in the first opening 601a located below the first external electrode 910. Also, in the upper region of the first opening 601a, a first opening-side insulating layer 810 can be located in the region other than the region where the first external electrode 910 is located. The first opening-side insulating layer 810 can be positioned so as to cover the first opening 601a. Thereby, a first opening-side cavity (C4) can be formed on the first internal electrode 710 in the first opening 601a located below the first opening-side insulating layer 810.
[0082] A floating electrode 720 can be located on the first internal electrode 710 in the region where the second opening 601b is located. In the region where the second opening 601b is located, the floating electrode 720 can be formed in the inner region of the second opening 601b and in the section between the second openings 601b adjacent to each other on the first surface 600a of the structure 600.
[0083] The floating electrode 720 may not be on the first internal electrode 710 in the region where the first opening 601a is located. That is, the floating electrode 720 may not be formed on the first internal electrode 710 in the region between the first openings 601a adjacent to each other on the first opening 601a and the first surface 600a.
[0084] On the floating electrode 720, the second internal electrode 730 is positioned. That is, the second internal electrode 730 can be positioned on the region where the second opening 601b is located. In the region where the second opening 601b is located, the second internal electrode 730 can be formed in the inner region of the second opening 601b and in the section between the second openings 601b adjacent to each other on the first surface 600a of the structure 600. In the second opening 601b, a second opening side cavity (C5) can be formed on the second internal electrode 730. In contrast, the second internal electrode 730 may be positioned in a structure that fills the second opening 601b, and there may be no second opening side cavity (C5) in the second opening 601b.
[0085] The second internal electrode 730 is not on the first internal electrode 710 in the region where the first opening 601a is located.
[0086] The dielectric layer 740 is positioned only on a partial region of the first internal electrode 710. The dielectric layer 740 can be positioned only on the region where the second opening 601b is located.
[0087] In the region where the second opening 601b is located, the dielectric layer 740 can be positioned between the first internal electrode 710 and the floating electrode 720. In the region where the second opening 601b is located, the dielectric layer 740 can be positioned between the floating electrode 720 and the second internal electrode 730.
[0088] The dielectric layer 740 may not be on the first internal electrode 710 in the region where the first opening 601a is located. That is, the dielectric layer 740 may not be formed on the first internal electrode 710 in the region of the first opening 601a and in the region between the first openings 601a adjacent to each other on the first surface 600a.
[0089] The second external electrode 920 can be positioned in the direction of the first surface 600a of the structure 600. The second external electrode 920 is located on the second internal electrode 730. The second external electrode 920 is positioned so as to be in contact with the second internal electrode 730 and can be electrically connected to the second internal electrode 730. The second external electrode 920 is located on the region where the second opening 601b is located and can face the region where the second opening 601b is located in the vertical direction. The second external electrode 920 can have a single-layer structure or a multilayer structure.
[0090] As described above, the embodiments of the present invention have been described in detail. However, the scope of the rights of the present invention is not limited thereto, and various modifications and improvements made by those skilled in the art using the basic concept of the present invention defined in the claims also belong to the scope of the rights of the present invention.
Explanation of Reference Numerals
[0091] 100: Structure 101: Opening 210: First internal electrode 220: Floating electrode 230: Second internal electrode 240: Dielectric layer 310: First opening side insulating layer 320: Second opening side insulating layer 410: First external electrode 420: Second external electrode
Claims
1. A structure having a plurality of openings located on a first surface; A first internal electrode located on at least a part of the region where the openings are located; A floating electrode located on a partial region of the first internal electrode; A second internal electrode located on the floating electrode; A first external electrode located on the first surface and connected to the first internal electrode; and A capacitor including a second external electrode located on the first surface and connected to the second internal electrode.
2. The capacitor according to claim 1, wherein the structure is an anodized aluminum.
3. The plurality of openings include a first opening, a second opening, and a third opening, The capacitor according to claim 1, wherein the first external electrode faces the region where the first opening is located in a direction in which the first surface and the second surface are separated.
4. The capacitor according to claim 3, wherein a first opening side cavity is located in the first opening.
5. The capacitor according to claim 3, wherein the first external electrode is connected to the first internal electrode in a region adjacent to the first opening.
6. The capacitor according to claim 5, wherein the first external electrode is directly in contact with and connected to the first internal electrode.
7. The capacitor according to claim 3, further including a first opening side insulating layer located so as to cover the first opening.
8. The capacitor according to claim 3, wherein the second external electrode faces the region where the second opening is located in a direction in which the first surface and the second surface are separated.
9. The capacitor according to claim 8, wherein the second external electrode is connected to the second internal electrode in a region adjacent to the second opening.
10. The capacitor according to claim 9, wherein the second external electrode is directly in contact with and connected to the second internal electrode.
11. The capacitor according to claim 8, wherein a second opening side cavity is located in the second opening.
12. The capacitor according to claim 8, further including a second opening side insulating layer located so as to cover the second opening.
13. The capacitor according to claim 12, wherein the floating electrode and the second internal electrode are located on the second opening side insulating layer.
14. The plurality of openings include a first opening and a second opening, The capacitor according to claim 3, wherein the floating electrode and the second internal electrode are located only on the region where the second opening and the third opening are located.
15. The plurality of openings include a first opening and a second opening, The capacitor according to claim 1, wherein the floating electrode and the second internal electrode are located only on the region where the second opening is located.
16. A structure having a plurality of openings located on a first surface; A first internal electrode located in a region between the openings from the first surface and on the openings; A floating electrode located on the first internal electrode; A second internal electrode located on the floating electrode; A first external electrode connected to the first internal electrode and located in a direction in which the first surface of the structure faces; and A capacitor including a second external electrode connected to the second internal electrode and located in a direction in which the first surface of the structure faces.
17. The plurality of openings include a first opening, a second opening, and a third opening, The floating electrode and the second internal electrode are not present in the first opening and the region where the first opening is adjacent to each other, The capacitor according to claim 16, wherein the first external electrode is connected to the first internal electrode in a region adjacent to the first opening.
18. The capacitor according to claim 17, further including a second opening side insulating layer located so as to cover the second opening.
19. The plurality of openings include a first opening and a second opening, The floating electrode and the second internal electrode are not present in the first opening and the region where the first opening is adjacent to each other, The capacitor according to claim 16, wherein the first external electrode is connected to the first internal electrode in a region adjacent to the first opening.