El device, light-emitting apparatus, electronic appliance, and lighting apparatus

Abstract

To provide an organic compound having a small refractive index, a novel organic compound having a small refractive index and electron donatability, or an EL device having high luminous efficiency.SOLUTION: There are provided: an organic compound having an arylamine skeleton or acridine skeleton containing a fluorine atom; and an EL device using the organic compound. The EL device preferably has a hole injection layer which contains: an organic compound having an arylamine skeleton or acridine skeleton containing a fluorine atom; and a substance exhibiting electron acceptability for the organic compound.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One aspect of the present invention is an organic compound, an EL device, a display module, a lighting module, The present invention relates to a display device, a light-emitting device, an electronic device, a lighting device, and an electronic device. The present invention is not limited to the above-mentioned technical fields. The technical field relates to an article, a method, or a manufacturing method. , process, machine, manufacture, or composition of matter Therefore, one embodiment of the present invention disclosed in the present specification more specifically relates to The technical fields include semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, and power storage devices. As examples of the present invention, the present invention relates to a device, a storage device, an imaging device, a driving method thereof, or a manufacturing method thereof. Some examples include: [Background technology]

[0002] Electroluminescence (EL) using organic compounds The practical application of EL devices (organic EL devices) that use these The basic structure of an EL device is an organic compound layer (EL layer) containing a light-emitting material between a pair of electrodes. A voltage is applied to this element to inject carriers, and the regeneration of the carriers By utilizing the bond energy, light can be emitted from the light-emitting material.

[0003] Since such EL devices are self-emitting, when they are used as pixels in a display, Compared to flat panel displays, it has the advantage of being highly visible and not requiring a backlight. The EL device is suitable as a display element. It is also a great advantage that it can be manufactured in a thin and lightweight manner. Furthermore, it is also one of the characteristics that the response speed is extremely fast.

[0004] In addition, since these EL devices can form the light-emitting layer continuously in two dimensions, light emission in a planar shape can be obtained. This is a characteristic that is difficult to obtain with point light sources typified by incandescent bulbs and LEDs, or linear light sources typified by fluorescent lamps. Therefore, it has high utility value as a planar light source that can be applied to lighting and the like.

[0005] Thus, displays and lighting devices using EL devices can be suitably applied to various electronic devices, but research and development are underway to obtain EL devices with better characteristics.

[0006] One of the problems often encountered when talking about organic EL devices is the low light extraction efficiency. In particular, the attenuation due to reflection caused by the difference in refractive index is a major factor in reducing the efficiency of the device. In order to reduce this influence, a configuration has been proposed in which a layer made of a low refractive index material is formed inside the EL layer (see, for example, Non-Patent Document 1).

[0007] An EL device having this configuration can be made into an EL device with higher luminous efficiency than an EL device having a conventional configuration. However, it is not easy to form a layer made of a low refractive index material inside the EL layer without adversely affecting other important characteristics of the EL device. This is because there is a trade-off relationship between a low refractive index and high carrier transportability or reliability when used in an EL device. That is, carriers in organic compounds Transportability and reliability are largely due to the presence of unsaturated bonds, and organic compounds having many unsaturated bonds tend to have a high refractive index.

Prior Art Documents

Patent Documents

[0008]

Non-Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0009] In one aspect of the present invention, an object is to provide a novel organic compound. Or, in one aspect of the present invention, an object is to provide an organic compound having a small refractive index. Or, in one aspect of the present invention, an object is to provide a novel organic compound having a small refractive index and high electron donating properties.

[0010] Or, in another aspect of the present invention, an object is to provide an EL device having high luminous efficiency. Or, in one aspect of the present invention, an object is to provide an EL device, a light-emitting device, an electronic appliance, a display device, and an electronic device each having low power consumption.

[0011] Note that the description of these effects does not prevent the existence of other effects. Note that one aspect of the present invention does not necessarily have to have all of these effects. Note that other effects ​​, which will become obvious from the descriptions in the specification, drawings, claims, etc., and from the descriptions in the specification, drawings , claims, etc., it is possible to extract other effects than these.

[0012] The present invention only needs to solve any one of the above problems.

Means for Solving the Problems

[0013] One aspect of the present invention has an anode, a cathode, and an EL layer located between the anode and the cathode , the EL layer has a first layer, and the first layer contains a first substance and a second substance , the first substance is a substance that exhibits electron-donating properties with respect to the second substance, and the first substance has an arylamine skeleton or an acridine skeleton, and a fluorine atom is included in the first substance is an EL device.

[0014] Alternatively, another aspect of the present invention has an anode, a cathode, and an EL layer located between the anode and the cathode , the EL layer has a first layer, and the first layer contains a first substance and a second substance, the first substance is a substance that exhibits electron-donating properties with respect to the second substance , the first substance has an arylamine skeleton or an acridine skeleton, and the first substance has one or more aromatic rings in which the lone pair of electrons of the nitrogen atom of the arylamine skeleton or the acridine skeleton can be conjugated , and one or two of the aromatic rings are bonded to fluorine atoms is an EL device.

[0015] Alternatively, another aspect of the present invention is an EL device in which a fluorine atom is bonded to 1 of the aromatic rings in the above configuration .

[0016] Alternatively, in another aspect of the present invention, in the above configuration, the refractive index of the first substance is less than 1.8, and it is an EL device.

[0017] Alternatively, in another aspect of the present invention, in the above configuration, the EL layer includes a hole injection layer and a light-emitting layer, the light-emitting layer is provided between the hole injection layer and the cathode, the hole injection layer is provided in contact with the anode, and the first layer is the hole injection layer, and it is an EL device.

[0018] Alternatively, in another aspect of the present invention, in the above configuration, the EL layer has a plurality of light-emitting units and a charge generation layer provided between the plurality of light-emitting units, and the first layer is the charge generation layer, and it is an EL device.

[0019] Alternatively, in another aspect of the present invention, in the above configuration, the EL layer further has a second layer, the second layer has a third substance and a fourth substance, the third substance is a substance showing electron-donating property with respect to the fourth substance, the third substance is an organic compound having an arylamine skeleton or an acridine skeleton, and the third substance contains a fluorine atom, and it is an EL device.

[0020] Alternatively, in another aspect of the present invention, in the above configuration, the EL layer further has a second layer, the second layer has a third substance and a fourth substance, the third substance is a substance showing electron-donating property with respect to the fourth substance, the third substance is an organic compound having an arylamine skeleton or an acridine skeleton, and the first substance is an aromatic ring in which the lone pair of nitrogen atoms in the arylamine skeleton or the acridine skeleton can be conjugated. An EL device having one or more, and having a fluorine atom bonded to one or two of the aromatic rings is a bis.

[0021] Or, another aspect of the present invention is an EL device in which, in the above configuration, the refractive index of the third substance is 1.8 or less.

[0022] Or, another aspect of the present invention is an EL device in which the light-emitting unit on the most anodic side among the plurality of light-emitting units has a hole injection layer in contact with the anode, and the second layer is the hole injection layer.

[0023] Or, another aspect of the present invention is an EL device in which, in the above configuration, the first substance and the third substance are the same substance, and the second substance and the fourth substance are the same substance.

[0024] Or, another aspect of the present invention is an EL device in which, in the above configuration, the number of fluorine atoms contained in the organic compound is 5 or more.

[0025] Or, another aspect of the present invention is an EL device in which, in the above configuration, the number of fluorine atoms contained in the organic compound is 7 atomic% or more and 40 atomic% or less.

[0026] Or, another aspect of the present invention is an EL device in which, in the above configuration, the aromatic ring to which the fluorine atom is bonded is a benzene ring or a naphthalene ring.

[0027] Or, another aspect of the present invention is an EL device in which, in the above configuration, the aromatic ring to which the fluorine atom is bonded is a perfluoroaryl group.

[0028] ​​​​​​​​​Alternatively, in another aspect of the present invention, in the above configuration, the aromatic ring to which the fluorine atom is bonded is an EL device that is a perfluorophenyl group or a perfluorobiphenyl group.

[0029] Alternatively, in another aspect of the present invention, in the above configuration, the EL device is such that the film thickness of the hole injection layer is 20 nm or more.

[0030] Alternatively, in another aspect of the present invention, in the above configuration, the EL device is such that the second substance is molybdenum oxide.

[0031] Alternatively, in another aspect of the present invention, it is an organic compound represented by the following general formula (G1).

[0032] [Chemical formula]

[0033] However, in the above general formula (G1), R 1 to R 4 and R 7 to R 10 are each independently either hydrogen, an alkyl group having 1 to 6 carbon atoms, or a fluorinated alkyl group having 1 to 6 carbon atoms, and R 5 and R 6 are each independently either hydrogen, an alkyl group having 1 to 6 carbon atoms, a fluorinated alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted phenyl group. Also, R 13 is either fluorine or a group represented by the following general formula (g1).

[0034] [Chemical formula]

[0035] ​​​​​However, in the above general formula (g1), R 21 to R 24 and R 27 to R 30 are each independently either hydrogen, an alkyl group having 1 to 6 carbon atoms, or a fluoroalkyl group having 1 to 6 carbon atoms, and R 25 and R 26 are each independently either hydrogen, an alkyl group having 1 to 6 carbon atoms, a fluoroalkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted phenyl group.

[0036] Or, another aspect of the present invention is an organic compound in which, in the above configuration, R 13 is a group represented by the general formula (g1).

[0037] Or, another aspect of the present invention is an organic compound represented by the following general formula (G2).

[0038]

Chemical formula

[0039] However, in the above general formula (G2), R 1 to R 4 and R 7 to R 10 are each independently either hydrogen, an alkyl group having 1 to 6 carbon atoms, or a fluoroalkyl group having 1 to 6 carbon atoms, and R 5 and R 6 are each independently either hydrogen, an alkyl group having 1 to 6 carbon atoms, carbon a fluoroalkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted phenyl group. Also, R 33 is either fluorine or a group represented by the following general formula (g1).

[0040]

Chemical formula

[0041] However, in the above general formula (g1), R 21 to R 24 and R 27 to R 30 are each independently any one of hydrogen, an alkyl group having 1 to 6 carbon atoms, and a fluorinated alkyl group having 1 to 6 carbon atoms, and R 25 and R 26 are each independently any one of hydrogen, an alkyl group having 1 to 6 carbon atoms, a fluorinated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted phenyl group. That is.

[0042] Or, another aspect of the present invention is an organic compound in which R 33 is represented by the above general formula (g1). That is.

[0043] Or, another aspect of the present invention is an organic compound in which, in the above configuration, R 25 and R 26 are phenyl groups. That is.

[0044] Or, another aspect of the present invention is an organic compound in which, in the above configuration, R 21 to R 24 and R 27 to R 30 are hydrogen.

[0045] Or, another aspect of the present invention is an organic compound in which, in the above configuration, R 5 and R 6 are phenyl groups. That is.

[0046] Or, another aspect of the present invention is an organic compound represented by the following structural formula (100) in the above configuration. That is.

[0047] [Chemical formula]

[0048] Alternatively, another aspect of the present invention is an organic compound represented by the following structural formula (200) in the above configuration. It is an organic compound.

[0049] [Chemical formula]

[0050] Alternatively, another aspect of the present invention is an EL device containing the organic compound represented by any one of the above. It is a device.

[0051] Alternatively, another aspect of the present invention is an EL device containing the organic compound represented by any one of the above as a hole transport material. It is a device.

[0052] Alternatively, another aspect of the present invention is an EL device containing the organic compound represented by any one of the above in a hole injection layer. It is a device.

[0053] Alternatively, another aspect of the present invention has an anode, a cathode, and an EL layer provided between the anode and the cathode, the EL layer includes a hole injection layer and a light-emitting layer, the light-emitting layer is located between the hole injection layer and the cathode, the hole injection layer is provided in contact with the anode, the hole injection layer includes the organic compound represented by any one of the above and a second substance, and the organic compound is a substance that shows electron-donating properties to the second substance. It is an EL device. It is a device. It is located between the hole injection layer and the cathode, the hole injection layer is provided in contact with the anode, the hole injection layer includes the organic compound represented by any one of the above and a second substance, and the organic compound is a substance that shows electron-donating properties to the second substance. It is an EL device. It is located between the hole injection layer and the cathode, the hole injection layer is provided in contact with the anode, the hole injection layer includes the organic compound represented by any one of the above and a second substance, and the organic compound is a substance that shows electron-donating properties to the second substance. It is an EL device. It is an EL device.

[0054] Alternatively, another aspect of the present invention is an EL device in the above configuration, wherein the refractive index of the organic compound is 1.8 or less. It is an EL device.

[0055] Alternatively, another aspect of the present invention is an EL device in the above configuration, wherein the film thickness of the hole injection layer is 20 nm or more.

[0056] Alternatively, another aspect of the present invention is an EL device in the above configuration, wherein the second substance is molybdenum oxide.

[0057] Alternatively, another aspect of the present invention is a light-emitting device including the EL device according to any one of the above, a transistor, or a substrate.

[0058] Alternatively, another aspect of the present invention is an electronic device including the above light-emitting device, a sensor, an operation button, a speaker, or a microphone.

[0059] Alternatively, another aspect of the present invention is a lighting device including the above light-emitting device and a housing.

[0060] Alternatively, another aspect of the present invention is an electronic device including the organic compound according to any one of the above.

[0061] Note that the light-emitting device in this specification includes an image display device using an EL device. In addition, a module in which a connector, for example, an anisotropic conductive film or a TCP (Tape Carrier Package) is attached to the EL device, a module in which a printed wiring board is provided at the tip of the TCP, or a module in which an IC (integrated circuit) is directly mounted on the EL device by a COG (Chip On Glas s) method may have a light-emitting device. Furthermore, lighting fixtures and the like may have a light-emitting device.

Advantages of the Invention

[0062] In one aspect of the present invention, a novel organic compound can be provided. Or, in one aspect of the present invention it is possible to provide an organic compound having a low refractive index. Or, in one aspect of the present invention it is possible to provide an organic compound having a low refractive index and a high electron donating property.

[0063] Or, in another aspect of the present invention, an EL device with high luminous efficiency can be provided . Or, in one aspect of the present invention, an EL device, a light emitting device, an electronic device, a display device, and an electronic device with low power consumption can each be provided.

[0064] Note that the description of these effects does not prevent the existence of other effects. Note that one aspect of the present invention does not necessarily have to have all of these effects. Note that other effects will become obvious from the description in the specification, drawings, claims, etc., and it is possible to extract these other effects from the description in the specification, drawings , claims, etc.

Brief Description of the Drawings

[0065]

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Figure 30

Mode for Carrying Out the Invention

[0066] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and those skilled in the art can easily understand that the form and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention is not to be construed as limited to the description of the embodiments shown below.

[0067] (Embodiment 1) An organic EL device (hereinafter also referred to as an EL device) usually includes a light-emitting layer, a carrier transport layer, A layer (also referred to as an EL layer) containing an organic compound composed of a plurality of functionally separated layers such as a carrier injection layer is sandwiched between a pair of electrodes. A hole injection layer or a hole transport layer is formed between the anode and the light-emitting layer, which serves to smoothly inject holes from the electrode into the EL layer and rapidly transport and inject holes into the light-emitting layer. As reported in Non-Patent Document 1, the luminous efficiency of an organic EL device can be improved by providing a layer with a lower refractive index inside the device than the surrounding materials. As the name implies, an organic EL device is an EL device using an EL layer containing an organic compound. The refractive index of an organic compound largely depends on the atomic refraction of the atoms constituting the organic compound. That is, an organic compound having a large proportion of atoms with small atomic refraction among the atoms constituting the organic compound is likely to be an organic compound with a small refractive index, and an organic EL device fabricated using the organic compound can be an EL device with high luminous efficiency. Here, a typical example of an atom with small atomic refraction is a fluorine atom. However, since a fluorine atom has a high electron-withdrawing property, an organic compound containing a large amount of fluorine atoms is predicted to have an adverse effect on hole transportability and electron-donating property, and has hardly been used as a hole transport material or an electron-donating material. However, the present inventors have found that an organic compound having an arylamine skeleton or an acridine skeleton can be suitably used as an electron-donating material even if it contains a fluorine atom in its molecular structure. The above-mentioned organic compound containing fluorine with low atomic refraction has a low refractive index.

[0068] As reported in Non-Patent Document 1, an organic EL device can improve its luminous efficiency by providing a layer with a lower refractive index inside the device than the surrounding materials. An organic EL device, as the name suggests, is an EL device using an EL layer containing an organic compound. The refractive index of an organic compound depends greatly on the atomic refraction of the atoms that make up the organic compound. That is, an organic compound with a large proportion of atoms with small atomic refraction among the atoms that make up the organic compound is likely to be an organic compound with a small refractive index, and an organic EL device made using this organic compound can be an EL device with high luminous efficiency. Here, a typical example of an atom with small atomic refraction is a fluorine atom. However, since a fluorine atom has a high electron-withdrawing property, an organic compound containing a large amount of fluorine atoms is predicted to have an adverse effect on hole transportability and electron-donating property, and has hardly been used as a hole transport material or an electron-donating material. An organic EL device, as the name implies, is an EL device using an EL layer containing an organic compound. The refractive index of an organic compound depends greatly on the atomic refraction of the atoms that make up the organic compound. That is, an organic compound with a large proportion of atoms with small atomic refraction among the atoms that make up the organic compound is likely to be an organic compound with a small refractive index, and an organic EL device made using this organic compound can be an EL device with high luminous efficiency. Here, a typical example of an atom with small atomic refraction is a fluorine atom. However, since a fluorine atom has a high electron-withdrawing property, an organic compound containing a large amount of fluorine atoms is predicted to have an adverse effect on hole transportability and electron-donating property, and has hardly been used as a hole transport material or an electron-donating material. That is, an organic compound with a large proportion of atoms with small atomic refraction among the atoms that make up the organic compound is likely to be an organic compound with a small refractive index, and an organic EL device made using this organic compound can be an EL device with high luminous efficiency. Here, a typical example of an atom with small atomic refraction is a fluorine atom. However, since a fluorine atom has a high electron-withdrawing property, an organic compound containing a large amount of fluorine atoms is predicted to have an adverse effect on hole transportability and electron-donating property, and has hardly been used as a hole transport material or an electron-donating material. However, the present inventors have found that an organic compound having an arylamine skeleton or an acridine skeleton can be suitably used as an electron-donating material even if it contains a fluorine atom in its molecular structure. The above-mentioned organic compound containing fluorine with low atomic refraction has a low refractive index.

[0069] Here, a typical example of an atom with small atomic refraction is a fluorine atom. However, since a fluorine atom has a high electron-withdrawing property, an organic compound containing a large amount of fluorine atoms is predicted to have an adverse effect on hole transportability and electron-donating property, and has hardly been used as a hole transport material or an electron-donating material. However, since a fluorine atom has a high electron-withdrawing property, an organic compound containing a large amount of fluorine atoms is predicted to have an adverse effect on hole transportability and electron-donating property, and has hardly been used as a hole transport material or an electron-donating material. However, since a fluorine atom has a high electron-withdrawing property, an organic compound containing a large amount of fluorine atoms is predicted to have an adverse effect on hole transportability and electron-donating property, and has hardly been used as a hole transport material or an electron-donating material. However, the present inventors have found that an organic compound having an arylamine skeleton or an acridine skeleton can be suitably used as an electron-donating material even if it contains a fluorine atom in its molecular structure. The above-mentioned organic compound containing fluorine with low atomic refraction has a low refractive index.

[0070] However, the present inventors have found that an organic compound having an arylamine skeleton or an acridine skeleton can be suitably used as an electron-donating material even if it contains a fluorine atom in its molecular structure. However, the present inventors have found that an organic compound having an arylamine skeleton or an acridine skeleton can be suitably used as an electron-donating material even if it contains a fluorine atom in its molecular structure. That is, an organic compound with a large proportion of atoms with small atomic refraction among the atoms that make up the organic compound is likely to be an organic compound with a small refractive index, and an organic EL device made using this organic compound can be an EL device with high luminous efficiency. It can be an organic compound, and the hole injection layer formed using the above organic compound can be a layer with a low refractive index. Therefore, it is possible to provide an EL device with high luminous efficiency.

[0071] In addition, in an organic compound having an arylamine skeleton or an acridine skeleton, since the lone pair of electrons on the nitrogen atom in these skeletons contributes to the electron-donating property, when fluorine is substituted for hydrogen in an aromatic ring within the conjugated range, the influence of its electron-withdrawing property is significant, and it was considered that the electron-donating property of the organic compound would decrease. However, it has been found by the inventors' results that an organic compound having an arylamine skeleton or an acridine skeleton does not significantly impair its electron-donating property even when fluorine is substituted in such an aromatic ring, and it can function as an electron-donating material when used together with an electron-accepting material, and can be suitably used as the hole injection layer of an EL device. As a result, it becomes easier to use an organic compound containing more fluorine atoms in the molecule as an electron-donating material, and a layer with a lower refractive index can be formed inside the light-emitting layer. As a result, it becomes possible to provide an EL device with better luminous efficiency.

[0072] In an aromatic ring where the lone pair of electrons on the nitrogen atom in the above arylamine skeleton or acridine skeleton is present within the conjugated range and the hydrogen of the aromatic ring is substituted with fluorine, when a plurality of aromatic rings are bonded to the nitrogen, it is preferable that fluorine atoms are bonded to one or two aromatic rings rather than all the aromatic rings.

[0073] ​​​​​​​​​​​​​​​​Also, it is possible that the larger the proportion of fluorine atoms contained in the organic compound, the smaller the refractive index. Therefore, it is preferable that 4 or more fluorine atoms are bonded to the aromatic ring. More preferably, fluorine atoms are bonded to all substitutable positions.

[0074] Also, the aromatic ring is preferably a benzene ring or a naphthalene ring, more preferably a benzene ring.

[0075] In the organic compound, it is preferable that there is one aromatic ring having a fluorine atom in the range where the lone pair of nitrogen in the arylamine skeleton or the acridine skeleton can be conjugated, because the electron donating property does not become too low.

[0076] In addition, a substituent having a fluorine atom may be bonded outside the range where the lone pair of nitrogen in the arylamine skeleton or the acridine skeleton of the organic compound can be conjugated. Examples of the substituent having a fluorine atom include an alkyl fluoride group and an aryl fluoride group, and an aryl fluoride group is more preferable. Among them, an aryl group having 5 or more fluorine atoms, particularly a perfluoroaryl group, is suitable because it has a large number of fluorine atoms and an organic compound with a lower refractive index can be obtained. In addition, an organic compound having a fluorine atom in the aromatic ring where the lone pair of nitrogen in the arylamine skeleton or the acridine skeleton can be conjugated and also having a fluorine atom outside the range is more preferable because the ratio of fluorine atoms in the molecule increases and the refractive index can be further reduced.

[0077] Also, an EL device using the organic compound as an electron donating material has improved luminous efficiency. while also maintaining other major characteristics (such as driving voltage and lifespan) other than luminous efficiency at good levels as in the case of an EL device using an organic compound not containing fluorine atoms, which is also a major feature. That is, the inventors have found an organic compound with a low refractive index that contains many fluorine atoms with high electron-withdrawing properties while maintaining good electron-donating properties, and have realized an EL device with good luminous efficiency using the organic compound. In particular, when the organic compound is used as the first substance and a substance in which the first substance exhibits electron-donating properties is used as the second substance, an EL device using a layer containing the first substance and the second substance as a hole injection layer or an intermediate layer (charge generation layer) in a tandem device can not only improve luminous efficiency but also have other major characteristics (such as driving voltage and lifespan) other than luminous efficiency at good levels.

[0078] That is, while containing many fluorine atoms with high electron-withdrawing properties, the inventors have found an organic compound with a low refractive index that maintains good electron-donating properties, and have realized an EL device with good luminous efficiency using the organic compound. In particular, when the organic compound is used as the first substance and a substance in which the first substance exhibits electron-donating properties is used as the second substance, an EL device using a layer containing the first substance and the second substance as a hole injection layer or an intermediate layer (charge generation layer) in a tandem device can not only improve luminous efficiency but also have other major characteristics (such as driving voltage and lifespan) other than luminous efficiency at good levels. can be an EL device with good characteristics. Note that when the proportion of fluorine atoms in the molecule of the organic compound (first substance) exceeds 40 atomic%, the electron-donating property becomes too low and the function as a donor material deteriorates. Therefore, the proportion of fluorine atoms is preferably 40 atomic% or less. Also, in order to achieve a low refractive index, it is preferably contains 7 atomic% or more of fluorine atoms. Some preferred embodiments of the organic compound (first substance) as described above can be represented by the following general formula as specific examples.

[0079] However, in the above general formula (G1), R to R

[0080]

[0081]

Chemical Formula

[0082] However, in the above general formula (G1), R 1 to R 4and R 7 or R 10 are each independently either hydrogen, an alkyl group having 1 to 6 carbon atoms or a fluoroalkyl group having 1 to 6 carbon atoms and R 5 and R 6 are each independently hydrogen, an alkyl group having 1 to 6 carbon atoms, a fluoroalkyl group having 1 to 6 carbon atoms or an optionally substituted phenyl group In addition, R 13 is either fluorine or a group represented by the following general formula (g1).

[0083] [Chemical formula]

[0084] However, in the above general formula (g1), R 21 to R 24 and R 27 to R 30 are each independently either hydrogen, an alkyl group having 1 to 6 carbon atoms or a fluoroalkyl group having 1 to 6 carbon atoms and R 25 and R 26 are each independently hydrogen, an alkyl group having 1 to 6 carbon yl group, a fluoroalkyl group having 1 to 6 carbon atoms or an optionally substituted phenyl group either

[0085] In the organic compound represented by the above general formula (G1), R 13 being fluorine is preferred because it results in an organic compound having a lower refractive index, and being a group represented by the above general formula (g1) is preferred because it imparts a stronger electron-donating property

[0086] In addition, the organic compound of one embodiment of the present invention can also be represented by the following general formula (G2).

[0087] [ka]

[0088] In the above general formula (G2), R 1 ~R 4 and R 7 ~R 10 are independent any one of hydrogen, an alkyl group having 1 to 6 carbon atoms, and a fluoroalkyl group having 1 to 6 carbon atoms; Or, R 5 and R 6 are each independently a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, The alkyl groups are either fluorinated alkyl groups of numbers 1 to 6 or substituted or unsubstituted phenyl groups. Also, R 33 is either fluorine or a group represented by the above general formula (g1).

[0089] [ka]

[0090] In the above general formula (G3), R 1 ~R 4 and R 7 ~R 10 are independent any one of hydrogen, an alkyl group having 1 to 6 carbon atoms, and a fluoroalkyl group having 1 to 6 carbon atoms; Or, R 5 and R 6 are each independently a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, The alkyl groups are either fluorinated alkyl groups of numbers 1 to 6 or substituted or unsubstituted phenyl groups. Also, R 21 ~R 24 and R 27 ~R 30 each independently represents hydrogen, a group having 1 to 6 carbon atoms and a fluorinated alkyl group having 1 to 6 carbon atoms; R 25 and R26 is independently either hydrogen, an alkyl group having 1 to 6 carbon atoms, a fluorinated alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted phenyl group.

[0091] In the organic compound represented by the general formula (G2), R 33 is preferably fluorine because it results in an organic compound with a lower refractive index. That is, a preferred embodiment of the present invention is an organic compound represented by the following general formula (G4).

[0092] [Chemical formula]

[0093] However, in the general formula (G4), R 1 to R 4 and R 7 to R 10 are each independently either hydrogen, an alkyl group having 1 to 6 carbon atoms, or a fluorinated alkyl group having 1 to 6 carbon atoms, and R 5 and R 6 are each independently either hydrogen, an alkyl group having 1 to 6 carbon atoms, a fluorinated alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted phenyl group.

[0094] Also, in the organic compound represented by the general formula (G2), R 33 is preferably an organic compound represented by the above general formula (g1) because it imparts stronger electron-donating properties. That is, a preferred embodiment of the present invention is an organic compound represented by the above general formula (G3).

[0095] In the organic compounds represented by the general formulas (G1) to (G4), R 5 and R 6is a phenyl group which may be substituted or unsubstituted, particularly preferably an unsubstituted phenyl group, for improving the glass transition temperature (Tg) and maintaining the heat resistance of the EL device. Further, in the general formula (G1) or the general formula (G3) above, R 25 or R 26 is a phenyl group which may be substituted or unsubstituted, particularly preferably an unsubstituted phenyl group, for the same reason.

[0096] Further, in the organic compound represented by the general formula (G1) to the general formula (G4), it is preferable that R 2 and R 9 are hydrogen in order to maintain a low refractive index. Further, in the general formula (G1 ) or the general formula (G3) above, it is preferable that R 22 or R 29 are hydrogen for the same reas on.

[0097] Further, in the organic compound represented by the general formula (G1) to the general formula (G4), it is preferable that R 1 to R 4 and R 7 to R 10 are hydrogen in order to maintain a low refractive index. Further , in the general formula (G1) or the general formula (G3) above, it is preferable that R 21 to R 24 and R 2 7 to R 30 are hydrogen for the same reason.

[0098] In the organic compound represented by the general formula (G1) to the general formula (G4), specific examples of the alkyl group having 1 to 6 carbon atoms and the alkyl fluoride group having 1 to 6 carbon atoms include groups represented by the following formulas (1- 1) to (1-23). Further, the above-mentioned substituted or unsubstituted When the phenyl group without substitution has a substituent, examples of the substituent include, in addition to the groups represented by the following formulas (1-1) to (1-23), a fluoro group, a phenyl group, a dibenzothiophenyl group, a carbazolyl group, a fluorenyl group, a dimethylfluorenyl group, a diphenyltriazinyl group, etc. can be used.

[0099]

Chemical formula

[0100] Specific examples of the organic compound having the above structure are shown below.

[0101]

Chemical formula

[0102]

Chemical formula

[0103]

Chemical formula

[0104]

Chemical formula

[0105]

Chemical formula

[0106]

Chemical formula

[0107]

Chemical formula

[0108] [ka]

[0109] [ka]

[0110] Next, examples of methods for synthesizing organic compounds represented by the above general formula (G1) or general formula (G2) are given below. This article explains:

[0111] The organic compound represented by the above general formula (G1) or (G2) can be synthesized according to the following synthesis scheme: As shown, the 9,10-dihydroacridine derivative (g1-1) and the fluorinated benzene Derivative (m1) or fluorinated biphenyl derivative (m2) is reacted with the compound in the presence of a strong base. The compound can be synthesized by

[0112] [ka]

[0113] [ka]

[0114] In the above synthesis scheme, R 1 ~R 4 and R 7 ~R 10 are each independently Any of hydrogen, an alkyl group having 1 to 6 carbon atoms, and a fluorinated alkyl group having 1 to 6 carbon atoms. and R 5 and R 6 each independently represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, 1 to 6 fluorinated alkyl groups and substituted or unsubstituted phenyl groups. or X 4 or X 16 is fluorine or chlorine, and R 13 or R 33 is fluorine or a group represented by the following general formula (g1). However, in the above general formula (g1), R

[0115] [Chemical formula]

[0116] However, in the above general formula (g1), R 21 to R 24 and R 27 to R 30 are each independently any one of hydrogen, an alkyl group having 1 to 6 carbon atoms, and a fluorinated alkyl group having 1 to 6 carbon atoms, and R and R 25 and R 26 are each independently hydrogen, an alkyl group having 1 to 6 carbon atoms, a fluorinated alkyl group having 1 to 6 carbon atoms, and a substituted or unsubstituted phenyl group.

[0117] When the above synthetic scheme is carried out by an aromatic electrophilic substitution reaction, examples of the base include inorganic bases such as lithium amide, sodium amide, sodium hydroxide, and potassium hydroxide, and organic bases such as sodium tert-butoxide. Further, when a solvent is used in the reaction, tetrahydrofuran, 1,4-dioxane, dimethoxyethane, formamide, dimethylformamide, dimethyl sulfoxide, etc. can be used.

[0118] The organic compound represented by the above general formula (G1) or general formula (G2) is, as shown in the following synthetic scheme, a derivative (g1-1) of 9,10-dihydroacridine and fluorinated benzene ​​​​​​The derivative (m3) or the fluorinated biphenyl derivative (m4) can also be synthesized by reacting them in the presence of a palladium catalyst and a base. It can also be synthesized by allowing it to act below.

[0119]

Chemical formula

[0120]

Chemical formula

[0121] However, in the above synthesis scheme, R 1 to R 4 and R 7 to R 10 are each independently hydrogen, an alkyl group having 1 to 6 carbon atoms, or a fluorinated alkyl group having 1 to 6 carbon atoms. R 5 and R 6 are each independently hydrogen, an alkyl group having 1 to 6 carbon atoms, an alkyl group having 1 to 6 carbon atoms, a fluorinated alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted phenyl group. Also, X 4 or X 16 represents a halogen or a triflate group. As the halogen, iodine , bromine, or chlorine is preferable. Also, R 13 or R 33 is fluorine or a group represented by the following general formula ( g1).

[0122]

Chemical formula

[0123] However, in the above general formula (g1), R 21 to R 24 and R 27 to R 30 are each Each independently represents hydrogen, an alkyl group having 1 to 6 carbon atoms, or a fluoroalkyl group having 1 to 6 carbon atoms and either R 25 and R 26 each independently represents hydrogen, an alkyl group having 1 to 6 carbon atoms, a fluoroalkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted phenyl group whichever is applicable.

[0124] However, in the above synthetic scheme, X 4 or X 16 represents a halogen or a triflate group . As the halogen, iodine, bromine, or chlorine is preferred.

[0125] The above synthetic scheme is preferably carried out as a Buchwald-Hartwig reaction. In this reaction, a palladium complex or compound such as bis(dibenzylideneacetone)palladium(0), allyl palladium chloride dimer (II ), etc., and a ligand such as tri(tert-butyl)phosphine, di-tert-butyl(1-methyl-2,2-diphenylcyclopropyl)phosphine, tricyclohexylphosphine, etc., are used to utilize a palladium catalyst. As the base, an organic base such as sodium tert-butoxide or an inorganic base such as potassium carbonate can be mentioned. When a solvent is used in the reaction, toluene, xylene, 1 ,3,5-trimethylbenzene, etc. can be used.

[0126] As described above, an organic compound represented by the general formula (G1) or the general formula (G2) can be synthesized .

[0127] Here, as described above, typically an organic compound having the above arylamine skeleton or acridine skeleton represented by the general formula (G1) or the general formula (G2) and containing fluorine (the first ​ The substance of 1) can be preferably used as a hole injection layer or an intermediate layer in an EL device when used together with a second substance in which the organic compound can exhibit electron-donating properties. The first substance and the second substance may be used as a mixture, or each thin film may be laminated, but it is preferable to use a composite material mixed by co-evaporation. If one substance in a pair of substances shows electron-donating properties to the other substance, it can be said that the other substance shows electron-accepting properties to the one substance. Therefore, the second substance can be said to be a substance having electron-accepting properties with respect to the first substance. Examples of substances having electron-accepting properties that can be used as the second substance include molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, etc. Among them, in particular, molybdenum oxide is a preferable substance because it is stable in the air, has low hygroscopicity, and is easy to handle. Moreover, in addition to the substances described above, examples of substances having electron-accepting properties include organic compounds having an electron-withdrawing group (halogen group or cyano group). [3]Radialene derivatives having an electron-withdrawing group (especially a halogen group or a cyano group such as a fluoro group) have very high electron-accepting properties and can be preferably used as organic compounds having electron-accepting properties. Examples of such organic compounds include 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, chloranil, 2,3,6,7,10,11-hexacyano

[0128] If one substance in a pair of substances shows electron-donating properties to the other substance, it can be said that the other substance shows electron-accepting properties to the one substance. Therefore, the second substance can be said to be a substance having electron-accepting properties with respect to the first substance. Examples of substances having electron-accepting properties that can be used as the second substance include molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, etc. Among them, in particular, molybdenum oxide is a preferable substance because it is stable in the air, has low hygroscopicity, and is easy to handle. Moreover, in addition to the substances described above, examples of substances having electron-accepting properties include organic compounds having an electron-withdrawing group (halogen group or cyano group). Among them, [3]radialene derivatives having an electron-withdrawing group (especially a halogen group or a cyano group such as a fluoro group) have very high electron-accepting properties and can be preferably used as organic compounds having electron-accepting properties. Examples of such organic compounds include 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, chloranil, 2,3,6,7,10,11-hexacyano

[0129] Moreover, in addition to the substances described above, examples of substances having electron-accepting properties include organic compounds having an electron-withdrawing group (halogen group or cyano group). Among them, [3]radialene derivatives having an electron-withdrawing group (especially a halogen group or a cyano group such as a fluoro group) have very high electron-accepting properties and can be preferably used as organic compounds having electron-accepting properties. Examples of such organic compounds include 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, chloranil, 2,3,6,7,10,11-hexacyano Moreover, in addition to the substances described above, examples of substances having electron-accepting properties include organic compounds having an electron-withdrawing group (halogen group or cyano group). Among them, [3]radialene derivatives having an electron-withdrawing group (especially a halogen group or a cyano group such as a fluoro group) have very high electron-accepting properties and can be preferably used as organic compounds having electron-accepting properties. Examples of such organic compounds include 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, chloranil, 2,3,6,7,10,11-hexacyano ,8-hexacyanoquinodimethane, chloranil, 2,3,6,7,10,11-hexacyano Anno-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F 6-TCNNQ), etc., α,α’,α’’-1,2,3-cyclopropanetriylidene tris[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α ’,α’’-1,2,3-cyclopropanetriylidene tris[2,6-dichloro-3, 5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], α,α’,α ’’-1,2,3-cyclopropanetriylidene tris[2,3,4,5,6-pentaflu orobenzeneacetonitrile] can be used. Organic compounds having an electron-accepting property As, compounds in which an electron-withdrawing group is bonded to a condensed aromatic ring having a plurality of heteroatoms like HAT-CN are thermally stable and preferable.

[0130] In addition, phthalocyanine (abbreviation: H2Pc), copper(II) phthalocyanine (CuPC), etc. of phthalocyanine-based complex compounds, 4,4’-bis[N-(4-diphenylaminophenyl yl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N’-bis{4-[bi s(3-methylphenyl)amino]phenyl}-N,N’-diphenyl-(1,1’-bi phenyl)-4,4’-diamine (abbreviation: DNTPD), etc. of aromatic amine compounds can also be used.

[0131] Note that by co-evaporating an electron-donating material and an electron-accepting material to mix them, a composite material is used as a hole injection layer in contact with the anode, so that a material for forming an electrode can be selected regardless of the work function. That is, not only a material with a large work function is used as the anode, but also a material with a small work function. ​ It becomes possible to use the sai material as well.

[0132] (Embodiment 2) In this embodiment, the detailed aspects of the EL device shown in Embodiment 1 will be described. Fig. 1 shows a diagram representing an EL device according to one aspect of the present invention. The EL device shown in Fig. 1A has an anode 101, a cathode 102, and an EL layer 103. The EL device according to one aspect of the present invention has the arylamine skeleton or acridine skeleton described in Embodiment 1 in the EL layer 103 and contains an organic compound containing fluorine (the first substance). The first substance preferably forms a first layer together with a second substance in the EL layer 10 3. Note that the first substance is assumed to exhibit electron-donating properties to the second substance.

[0133] In Fig. 1, the first layer is preferably used as the hole injection layer 111. Further, the EL layer 103 has various functional layers including a light-emitting layer 113 in addition to the first layer, and in addition to the above-mentioned light emitting layer 113 and hole injection layer 111, it may have a hole transport layer 112, an electron transport layer 114, an electron injection layer 115, etc. The light-emitting layer 113 contains a light-emitting material, and the EL device according to one aspect of the present invention obtains light emission from the light-emitting material. The light-emitting layer 113 may contain a host material and other materials. The above-mentioned first substance may be contained in the light-emitting layer 113 , may be contained in the hole transport layer 112, may be contained in the hole injection layer, or may be contained in any of them . Note that the configuration of the EL device is not limited to these.

[0134] Since the above-mentioned first substance is an organic compound with a low refractive index, using it inside the EL layer Thus, an EL device with good external quantum efficiency can be obtained. Also, the first material The first layer containing the second material can also be a layer with a low refractive index. Similarly, the EL device having the first layer can be an EL device with good external quantum efficiency. Also the first layer functions suitably as a hole injection layer, and an EL device in which the first layer is a hole injection layer has high luminous efficiency such as external quantum efficiency, and can be an EL device with good main performance (drive voltage, lifetime etc.) other than luminous efficiency.

[0135] Subsequently, the detailed structure and material examples of the above EL device will be described.

[0136] The anode 101 is preferably formed using a metal, alloy, conductive compound having a large work function (specifically, 4.0 eV or more), and mixtures thereof. Specifically, for example, indium tin oxide (ITO: Indium Tin Oxide), indium tin oxide containing silicon or silicon oxide, indium zinc oxide, indium oxide containing tungsten and zinc oxide (IWZO), etc. are mentioned. These conductive metal oxide films are usually formed by sputtering, but may be formed by applying a sol-gel method or the like. As an example of the manufacturing method, indium zinc oxide is formed by a sputtering method using a target obtained by adding 1 to 20 wt% of zinc oxide to indium oxide. Also, indium oxide containing tungsten oxide and zinc oxide (IWZO) is formed by a sputtering method using a target containing 0.5 to 5 wt% of tungsten oxide and 0.1 to 1 wt% of zinc oxide with respect to indium oxide. wt%, and zinc oxide is formed by a sputtering method using a target containing 0.1 to 1 wt% of zinc oxide with respect to indium oxide. There are methods such as forming by a sputtering method using a target containing tungsten oxide and zinc oxide. Also, indium oxide containing tungsten oxide and zinc oxide (IWZO) is formed by a sputtering method using a target containing 0.5 to 5 wt% of tungsten oxide and 0.1 to 1 wt% of zinc oxide with respect to indium oxide. wt%, and zinc oxide is formed by a sputtering method using a target containing 0.1 to 1 wt% of zinc oxide with respect to indium oxide. It can also be formed. In addition, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co) , copper (Cu), palladium (Pd), or nitrides of metal materials (e.g., titanium nitride), etc. can be mentioned. Graphene can also be used. Note that by using it for the layer in contact with the anode 101 in the EL layer 103 described later, regardless of the work function, the electrode material can be selected .

[0137] The EL layer 103 preferably has a laminated structure, but there are no particular limitations on the laminated structure, and various layer structures such as a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a carrier blocking layer, an exciton blocking layer, and a charge generation layer can be applied. In this embodiment , as shown in FIG. 1A, in addition to the hole injection layer 111, the hole transport layer 112, and the light emitting layer 113 , a configuration having an electron transport layer 114 and an electron injection layer 115, and as shown in FIG. 1B, in addition to the hole injection layer 111, the hole transport layer 112, and the light emitting layer 113 , a configuration having an electron transport layer 114 and an electron injection layer 115 and a charge generation layer 116 will be described for two types of configurations. The materials constituting each layer are specifically shown below.

[0138] The EL device of one aspect of the present invention has a first layer with a small refractive index as described in Embodiment 1, and it is preferable that the first layer is the hole injection layer 111.

[0139] When the hole injection layer 111 is not the first layer, it can be formed using a substance having electron accepting properties. As the substance having electron accepting properties, in Embodiment 1, the second ​​​​​​​In addition to the substances listed as substances that can be used, polymers such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) can also be used. A substance having electron accepting properties can extract electrons from an adjacent hole transport layer (or hole transport material) by applying an electric field, and by extracting electrons, holes can be injected (generated) into the adjacent hole transport layer (or hole transport material). A composite material in which an electron accepting substance is contained in a substance having hole transporting properties can also be used as the hole injection layer 111. By using a composite material in which an electron accepting substance is contained in a hole transporting substance, a material for forming an electrode can be selected regardless of the work function. That is, not only a material having a large work function but also a material having a small work function can be used as the anode 101. As the electron accepting substance, those listed as substances that can be used as the second substance in Embodiment 1 can be used. As the hole transporting substance used in the composite material, various organic compounds such as aromatic amine compounds, carbazole derivatives, aromatic hydrocarbons, and polymer compounds (oligomers, dendrimers, polymers, etc.) can be used. The hole transporting substance used in the composite material is preferably a substance having a hole mobility of 10 cm / Vs or more. Hereinafter, organic compounds that can be used as the hole transporting substance in the composite material will be specifically listed. In addition to the substances listed as substances that can be used, polymers such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) can also be used. A substance having electron accepting properties can extract electrons from an adjacent hole transport layer (or hole transport material) by applying an electric field, and by extracting electrons, holes can be injected (generated) into the adjacent hole transport layer (or hole transport material). A composite material in which an electron accepting substance is contained in a substance having hole transporting properties can also be used as the hole injection layer 111. By using a composite material in which an electron accepting substance is contained in a hole transporting substance, a material for forming an electrode can be selected regardless of the work function. That is, not only a material having a large work function but also a material having a small work function can be used as the anode 101. As the electron accepting substance, those listed as substances that can be used as the second substance in Embodiment 1 can be used.

[0140] In addition to the substances listed as substances that can be used, polymers such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) can also be used. A substance having electron accepting properties can extract electrons from an adjacent hole transport layer (or hole transport material) by applying an electric field, and by extracting electrons, holes can be injected (generated) into the adjacent hole transport layer (or hole transport material). A composite material in which an electron accepting substance is contained in a substance having hole transporting properties can also be used as the hole injection layer 111. By using a composite material in which an electron accepting substance is contained in a hole transporting substance, a material for forming an electrode can be selected regardless of the work function. That is, not only a material having a large work function but also a material having a small work function can be used as the anode 101. As the electron accepting substance, those listed as substances that can be used as the second substance in Embodiment 1 can be used. As the hole transporting substance used in the composite material, various organic compounds such as aromatic amine compounds, carbazole derivatives, aromatic hydrocarbons, and polymer compounds (oligomers, dendrimers, polymers, etc.) can be used. The hole transporting substance used in the composite material is preferably a substance having a hole mobility of 10 cm / Vs or more. Hereinafter, organic compounds that can be used as the hole transporting substance in the composite material will be specifically listed. That is, not only a material having a large work function but also a material having a small work function can be used as the anode 101. As the electron accepting substance, those listed as substances that can be used as the second substance in Embodiment 1 can be used. As the hole transporting substance used in the composite material, various organic compounds such as aromatic amine compounds, carbazole derivatives, aromatic hydrocarbons, and polymer compounds (oligomers, dendrimers, polymers, etc.) can be used. The hole transporting substance used in the composite material is preferably a substance having a hole mobility of 10 cm / Vs or more. Hereinafter, organic compounds that can be used as the hole transporting substance in the composite material will be specifically listed. As the hole transporting substance used in the composite material, various organic compounds such as aromatic amine compounds, carbazole derivatives, aromatic hydrocarbons, and polymer compounds (oligomers, dendrimers, polymers, etc.) can be used. The hole transporting substance used in the composite material is preferably a substance having a hole mobility of 10 cm / Vs or more. Hereinafter, organic compounds that can be used as the hole transporting substance in the composite material will be specifically listed.

[0141] As the hole transporting substance used in the composite material, various organic compounds such as aromatic amine compounds, carbazole derivatives, aromatic hydrocarbons, and polymer compounds (oligomers, dendrimers, polymers, etc.) can be used. The hole transporting substance used in the composite material is preferably a substance having a hole mobility of 10 cm / Vs or more. Hereinafter, organic compounds that can be used as the hole transporting substance in the composite material will be specifically listed. As the hole transporting substance used in the composite material, various organic compounds such as aromatic amine compounds, carbazole derivatives, aromatic hydrocarbons, and polymer compounds (oligomers, dendrimers, polymers, etc.) can be used. The hole transporting substance used in the composite material is preferably a substance having a hole mobility of 10 cm / Vs or more. Hereinafter, organic compounds that can be used as the hole transporting substance in the composite material will be specifically listed. As the hole transporting substance used in the composite material, various organic compounds such as aromatic amine compounds, carbazole derivatives, aromatic hydrocarbons, and polymer compounds (oligomers, dendrimers, polymers, etc.) can be used. The hole transporting substance used in the composite material is preferably a substance having a hole mobility of 10 cm / Vs or more. Hereinafter, organic compounds that can be used as the hole transporting substance in the composite material will be specifically listed. 10 -6 cm 2 / Vs or more is preferred. Hereinafter, organic compounds that can be used as the hole transporting substance in the composite material will be specifically listed. Hereinafter, organic compounds that can be used as the hole transporting substance in the composite material will be specifically listed.

[0142] ​​Aromatic amine compounds that can be used in composite materials include N,N'-di(p-tolyl) )-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4' -Bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation Name: DPAB), N,N'-bis{4-[bis(3-methylphenyl)amino]phenyl }-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (abbreviation: D NTPD), 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenyl 1,1-bis-(4-bis(4-methyl- Examples of suitable cyclohexane derivatives include cyclohexane (phenyl)-amino-phenyl)-cyclohexane (abbreviation: TAPC). Specific examples of carbazole derivatives include 3-[N-(9-phenylcarbazole) PCzPC A1), 3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenyla Amino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl -N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazol PCzPCN1, 4,4'-di(N-carbazolyl)biphenyl (abbreviation: C BP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: T CPB), 9-[4-(N-carbazolyl)]phenyl-10-phenylanthracene ( Abbreviation: CzPA), 1,4-bis[4-(N-carbazolyl)phenyl]-2,3,5, 6-Tetraphenylbenzene, etc. can be used. Examples of aromatic hydrocarbons include , 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-Bu DNA), 2-tert-butyl-9,10-di(1-naphthyl)anthracene, 9,1 0-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 2-ter t-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuD BA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 9,10-dif enylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation : t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)anthracene (abbreviation : DMNA), 2-tert-butyl-9,10-bis[2-(1-naphthyl)phenyl yl]anthracene, 9,10-bis[2-(1-naphthyl)phenyl]anthracene, 2 ,3,6,7-tetramethyl-9,10-di(1-naphthyl)anthracene, 2,3,6 ,7-tetramethyl-9,10-di(2-naphthyl)anthracene, 9,9’-bianth ryl, 10,10’-diphenyl-9,9’-bianthryl, 10,10’-bis(2- phenylphenyl)-9,9’-bianthryl, 10,10’-bis[(2,3,4,5 ,6-pentaphenyl)phenyl]-9,9’-bianthryl, anthracene, tetracene , rubrene, perylene, 2,5,8,11-tetra(tert-butyl)perylene, etc. are mentioned. In addition, pentacene, coronene, etc. can also be used. The vinyl skeleton may be present. Examples of aromatic hydrocarbons having a vinyl group include, for example, 4,4’ -bis(2,2-diphenylvinyl)biphenyl (abbreviation: DPVBi), 9,10-bis [4-(2,2-diphenylvinyl)phenyl]anthracene (abbreviation: DPVPA), etc. are mentioned.

[0143] In addition, high molecular compounds such as poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenyl amine) (abbreviation: PVTPA), poly[N-(4-{N’-[4-(4-diphenylamino)phenyl]phenyl-N’-phenylamino}phenyl)methacrylamide](abbre viation: PTPDMA), poly[N,N’-bis(4-butylphenyl)-N,N’-bis( phenyl)benzidine] (abbreviation: Poly-TPD), etc. can also be used. The hole transport layer 112 is formed by including a material having hole transporting properties. As the material having hole transporting properties, it is preferably to have a hole mobility of 1×10

[0144] cm / Vs or more. -6 cm 2 / Vs or more. .

[0145] Examples of the material having hole transporting properties include 4,4’-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N’-bis(3-methylphenyl)- N,N’-diphenyl-[1,1’-biphenyl]-4,4’-diamine (abbreviation: TPD ), 4,4’-bis[N-(spiro-9,9’-bifluoren-2-yl)-N-phenylamino]biphenyl (abbreviation: BSPB), 4-phenyl-4’-(9-phenylfluoro rene-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3’-( 9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4 -phenyl-4’-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbre viation: PCBA1BP), 4,4’-diphenyl-4’’-(9-phenyl-9H- carbazol-3-yl)triphenylamine (abbreviation: PCBA2BP), etc. amine (abbreviation: PCBA1BP), 4,4’-diphenyl-4’’-(9-phenyl-9H- (Carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1- Naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl- 9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), 9,9- Dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl) Phenyl]fluorene-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-( 9-phenyl-9H-carbazol-3-yl)phenyl]spiro-9,9'-bifluoro rene-2-amine (abbreviation: PCBASF), etc. compounds having an aromatic amine skeleton, and 1 ,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carb azolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)- 9-phenylcarbazole (abbreviation: CzTP), 3,3'-bis(9-phenyl-9H- carbazole) (abbreviation: PCCP), etc. compounds having a carbazole skeleton, and 4,4' ,4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: D BT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluorene -9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), 4-[4 -(9-phenyl-9H-fluorene-9-yl)phenyl]-6-phenyldibenzoth ophene (abbreviation: DBTFLP-IV), etc. compounds having a thiophene skeleton, and 4,4 ',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DB F3P-II), 4-{3-[3-(9-phenyl-9H-fluorene-9-yl)phenyl]phen Compounds having a furan skeleton such as nil {phenyl} dibenzofuran (abbreviation: mmDBFFLBi-II), etc. Compounds having an aromatic amine skeleton and carbazole Compounds having a skeleton are preferred because they have good reliability, high hole transportability, and contribute to driving voltage reduction. In addition, the substances listed as hole transporting materials used in the composite material of the hole injection layer 111 can also be suitably used as the materials constituting the hole transport layer 112.

[0146] The light-emitting layer 113 is a layer containing a host material and a light-emitting material. The light-emitting material may be a fluorescent light-emitting substance, a phosphorescent light-emitting substance, a substance showing thermally activated delayed fluorescence (TADF), or other light-emitting materials. Also, it may be a single layer or may be composed of a plurality of layers containing different light-emitting materials.

[0147] In the light-emitting layer 113, examples of the materials that can be used as the fluorescent light-emitting substance include the following. Also, other fluorescent light-emitting substances can be used.

[0148] 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthryl biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N, N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl )phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bi (3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluorene- ​​​​9-[4-(9H-carbazol-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn ), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-di phenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazol -9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2 anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl -N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole -3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra(tert- butyl)perylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'- (9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA PA), N,N''-(2-tert-butylanthracene-9,10-diyl-di-4, 1-phenylene)bis[N,N',N'-triphenyl-1,4-phenylenediamine] (abbreviation: DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2 -anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: 2PCAPPA ), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'- triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), N,N,N', N',N'',N'',N''',N''' - octaphenyldibenz[g,p]chryse ne-2,7,10,15-tetraamine (abbreviation: DBC1), coumarin 30, N-(9, 10-diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazole-3- Amine (abbreviation: 2PCAPA), N-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazole-3-amine (abbreviation : 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N '-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,1 0-bis(1,1'-biphenyl-2-yl)-2-anthryl]-N,N',N'-tri phenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis (1,1'-biphenyl-2-yl)-N-[4-(9H-carbazole-9-yl)phenyl]-N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N,N (1,1'-biphenyl-2-yl)-N-[4-(9H-carbazole-9-yl)phenyl]-N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N,N 9-triphenylanthracen-9-amine (abbreviation: DPhAPhA) Coumarin 545 T, N,N'-diphenylquinacridone, (abbreviation: DPQd), Rubrene, 5,12-bis (1,1'-biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BP T), 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl- 4H-pyran-4-ylidene)propanedinitrile (abbreviation: DCM1), 2-{2-methyl yl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin -9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5, 11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N' -tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,1 11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N' 0-diamine (abbreviation: p-mPhAFD), 2-{2-isopropyl-6-[2-(1, 1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitro rile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7- tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoline -9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: D CJTB), 2-(2,6-bis{2-[4-(dimethylamino)phenyl]ethenyl} -4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2 ,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-te trahydro-1H,5H-benzo[ij]quinolin-9-yl)ethenyl]-4H-pi ran-4-ylidene}propanedinitrile (abbreviation: BisDCJTM), N,N’-(pi rene-1,6-diyl)bis[(6,N-diphenylbenzo[b]naphtho[1,2-d] furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), etc. Particularly , 1,6FLPAPrn, 1,6mMemFLPAPrn, 1,6BnfAPrn-03 Such condensed aromatic diamine compounds represented by pyrenediamine compounds are preferred because they have high hole transport properties and excellent luminous efficiency and reliability.

[0149] In the light-emitting layer 113, examples of materials that can be used as the phosphorescent material include the following. The following are examples.

[0150] Tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H -1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III )(abbreviation: [Ir(mpptz-dmp)3]), tris(5-methyl-3,4-diphe nyl-4H-1,2,4-triazolato)iridium(III)(abbreviation: [Ir(Mpt z)3]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H -1,2,4-triazolato]iridium(III)(abbreviation: [Ir(iPrptz-3 b)3]) and other organometallic iridium complexes having a 4H-triazole skeleton, tris [3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-tri zolato]iridium(III)(abbreviation: [Ir(Mptz1-mp)3]), tris(1 -methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium (III)(abbreviation: [Ir(Prptz1-Me)3]) and other organometallic iridium complexes having a 1H-triazole skeleton, fac-tris[1-(2,6-diisopropyl phenyl)-2-phenyl-1H-imidazole]iridium(III)(abbreviation: [Ir (iPrpmi)3]), tris[3-(2,6-dimethylphenyl)-7-methylimi dazo[1,2-f]phenanthridinato]iridium(III)(abbreviation: [Ir(dmp impt-Me)3]) and other organometallic iridium complexes having an imidazole skeleton, bis[2-(4’,6’-difluorophenyl)pyridinato-N,C iridium( 2’ III) tetrakis(1-pyrazolyl)borate(abbreviation: FIr6), bis[2-(4’ ,6’-difluorophenyl)pyridinato-N,C ,6’-difluorophenyl)pyridinato-N,C 2’Iridium(III) picolinate -to (abbreviation: FIrpic), bis{2-[3’,5’-bis(trifluoromethyl)f enyl]pyridinato-N,C 2’}}iridium(III) picolinate (abbreviation: [Ir( CF3ppy)2(pic)]), bis[2-(4’,6’-difluorophenyl)pyr dinato-N,C 2’ iridium(III) acetylacetonate (abbreviation: FIrac c) and other organometallic iridium complexes with phenylpyridine derivatives having an electron-withdrawing group such as this are compounds that exhibit blue phosphorescent emission and have an emission peak at 440 nm to 520 nm

[0151] In addition, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)3]), tris(4-t-butyl-6-phenylpyrimidinato)iri dium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bis (6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mp pm)2(acac)]), (acetylacetonato)bis(6-tert-butyl-4- phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)2(ac ac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyr imidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenyl pyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm)2(acac)] ), (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(II I) Organometallic iridium complexes having a pyrimidine skeleton such as (abbreviation: [Ir(dppm)2(acac)]), and (acetylacetonato)bis(3,5-dimethyl-2-phenyl pyradinato)iridium(III) (abbreviation: [Ir(mppr-Me)2(acac) ), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyr dinato)iridium(III) (abbreviation: [Ir(mppr-iPr)2(acac)]) Organometallic iridium complexes having a pyrazine skeleton such as, tris(2-phenylpyr inato-N,C 2’ )iridium(III) (abbreviation: [Ir(ppy)3]), bis(2- phenylpyridinato-N,C 2’ )iridium(III) acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), bis(benzo[h]quinolinato)iridium(I II) acetylacetonate (abbreviation: [Ir(bzq)2(acac)]), tris(be nzo[h]quinolinato)iridium(III) (abbreviation: [Ir(bzq)3]), tris (2-phenylquinolinato-N,C 2’ )iridium(III) (abbreviation: [Ir(pq) 3]), bis(2-phenylquinolinato-N,C 2’ )iridium(III) acetylacet onate (abbreviation: [Ir(pq)2(acac)]) Organometallic iridium complexes having a pyridine skeleton, in addition to tris(acetylacetonato)(monophenanthroline)ter rubidium(III) (abbreviation: [Tb(acac)3(Phen)]) Rare earth metal complexes such as. These are mainly compounds that exhibit green phosphorescent emission and have an emission peak at 500 nm to 6 00 nm. In addition, organometallic iridium complexes having a pyrimidine skeleton ​ The body is particularly preferable because it is remarkably excellent in reliability and luminous efficiency.

[0152] Also, (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis [4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), bis[4,6-di( [naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]), and other organometallic iridium complexes having a pyrimidine skeleton such as (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr)2(acac)]), bis(2, (3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr)2(dpm)]), (acetylacetonato)bis[2,3-bis (4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]), and other organometallic iridium complexes having a pyrazine skeleton such as (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr)2(acac)]), bis(2, (3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr)2(dpm)]), (acetylacetonato)bis[2,3-bis (4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]), and other organometallic iridium complexes having a pyrazine skeleton such as (acetylacetonato)bis[2,3-bis (4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]), and other organometallic iridium complexes having a pyrazine skeleton such as tris(1-phenylisoquinolinato-N,C 2’ )iridium(III) (abbreviation: [Ir (piq)3]), bis(1-phenylisoquinolinato-N,C 2’ )iridium(II I) acetylacetonate (abbreviation: [Ir(piq)2(acac)]), and other organometallic iridium complexes having a pyridine skeleton such as In addition to organometallic iridium complexes having a pyridine skeleton, 2,3,7,8,12,13,17,18 -octaethyl-21H,23H-porphyrin platinum(II) (abbreviation: PtOEP) such as Platinum complexes, tris(1,3-diphenyl-1,3-propanedionato)(monophen anthroline)europium(III) (abbreviation: [Eu(DBM)3(Phen)]), tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthro line)europium(III) (abbreviation: [Eu(TTA)3(Phen)]), and the like rare earth metal complexes are included. These are compounds that exhibit red phosphorescent emission and have an emission peak in the range of 60 0 nm to 700 nm. In addition, organometallic iridium complexes having a pyrazine skeleton can obtain red emission with good chromaticity.

[0153] In addition to the phosphorescent compounds described above, known phosphorescent materials can also be selected and used.

[0154] As the TADF material, fullerenes and their derivatives, acridines and their derivatives, eosin derivatives, etc. can be used. In addition, metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (P d), etc. can be mentioned. Examples of the metal-containing porphyrin include, for example, protoporphyrin-tin fluoride complex (SnF2(Pro to IX)), mesoporphyrin-tin fluoride complex (SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (SnF2(Hemato IX)), coproporph hyrin tetramethyl ester-tin fluoride complex (SnF2(Copro III-4M e)), octaethylporphyrin-tin fluoride complex (SnF2(OEP)), etioporph hyrin-tin fluoride complex (SnF2(Etio I)), octaethylporphyrin ​ - Examples also include platinum chloride complex (PtCl2OEP), etc.

[0155]

Chemical formula

[0156] Also, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ) shown by the following structural formula, 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: PCCzTzn), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10'H-spiro[acridine-9,9'-anthracene]-10'-one (abbreviation: ACRSA), etc. A heterocyclic compound having one or both of a π-electron excessive heterocyclic ring and a π-electron deficient heterocyclic ring is also used. enylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine ( abbreviation: PIC-TRZ), and 9-(4,6-diphenyl-1,3,5-triazin-2- yl)-9’-phenyl-9H,9’H-3,3’-bicarbazole (abbreviation: PCCzT zn), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-c arbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazine-10-yl)phenyl -4,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[4 -(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5- diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-d imethyl-9H-acridine-10-yl)-9H-xanthen-9-one (abbreviation: ACR XTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl] sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10’H-spiro[a cridine-9,9’-anthracene]-10’-one (abbreviation: ACRSA), etc. of π-electron excessive heterocyclic ring and π-electron deficient heterocyclic ring is also used It can exist. Since the heterocyclic compound has a π-electron-excessive heterocyclic aromatic ring and a π-electron-deficient heterocyclic aromatic ring, it has both high electron transportability and hole transportability, which is preferable. Among them, among the skeletons having a π-electron-deficient heterocyclic aromatic ring, a pyridine skeleton, a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), and a triazine skeleton are preferable because they are stable and have good reliability. Particularly, a benzofuropyrimidine skeleton, a benzothienopyrimidine skeleton, a benzofuropyrazine skeleton, and a benzothienopyrazine skeleton are highly acceptive and have good reliability, so they are preferable. Also, among the skeletons having a π-electron-excessive heterocyclic aromatic ring, an acridine skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a furan skeleton, a thiophene skeleton, and a pyrrole skeleton are stable and have good reliability, so it is preferable to have at least one of these skeletons. Note that as the furan skeleton, a dibenzofuran skeleton is preferable, as the thiophene skeleton, a dibenzothiophene skeleton is preferable, respectively. Also, as the pyrrole skeleton, an indole skeleton, a carbazole skeleton, an indolocarbazole skeleton, a bicarba zole skeleton, and a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton are particularly preferable. Note that a substance in which a π-electron-excessive heterocyclic aromatic ring and a π-electron-deficient heterocyclic aromatic ring are directly bonded has both strong electron-donating property of the π-electron-excessive heterocyclic aromatic ring and strong electron-accepting property of the π-electron-deficient heterocyclic aromatic ring, and the energy difference between the S1 level and the T1 level becomes small, so it is particularly preferable because thermally activated delayed fluorescence can be efficiently obtained. Note that instead of the π-electron-deficient heterocyclic aromatic ring, an aromatic ring bonded with an electron-withdrawing group such as a cyano group may be used. Also, as the π-electron-excessive skeleton, an aromatic amine skeleton, a phenazine skeleton, etc. can be used. Also, as the π-electron-deficient skeleton, a xanthene skeleton, etc. Since the heterocyclic compound has a π-electron-excessive heterocyclic aromatic ring and a π-electron-deficient heterocyclic aromatic ring, it has both high electron transportability and hole transportability, which is preferable. Among them, among the skeletons having a π-electron-deficient heterocyclic aromatic ring, a pyridine skeleton, a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), and a triazine skeleton are preferable because they are stable and have good reliability. Particularly, a benzofuropyrimidine skeleton, a benzothienopyrimidine skeleton, a benzofuropyrazine skeleton, and a benzothienopyrazine skeleton are highly acceptive and have good reliability, so they are preferable. Also, among the skeletons having a π-electron-excessive heterocyclic aromatic ring, an acridine skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a furan skeleton, a thiophene skeleton, and a pyrrole skeleton are stable and have good reliability, so it is preferable to have at least one of these skeletons. Note that as the furan skeleton, a dibenzofuran skeleton is preferable, as the thiophene skeleton, a dibenzothiophene skeleton is preferable, respectively. Also, as the pyrrole skeleton, an indole skeleton, a carbazole skeleton, an indolocarbazole skeleton, a bicarba zole skeleton, and a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton are particularly preferable. Note that a substance in which a π-electron-excessive heterocyclic aromatic ring and a π-electron-deficient heterocyclic aromatic ring are directly bonded has both strong electron-donating property of the π-electron-excessive heterocyclic aromatic ring and strong electron-accepting property of the π-electron-deficient heterocyclic aromatic ring, and the energy difference between the S1 level and the T1 level becomes small, so it is particularly preferable because thermally activated delayed fluorescence can be efficiently obtained. Note that instead of the π-electron-deficient heterocyclic aromatic ring, an aromatic ring bonded with an electron-withdrawing group such as a cyano group may be used. Also, as the π-electron-excessive skeleton, an aromatic amine skeleton, a phenazine skeleton, etc. can be used. Also, as the π-electron-deficient skeleton, a xanthene skeleton, etc. Since the heterocyclic compound has a π-electron-excessive heterocyclic aromatic ring and a π-electron-deficient heterocyclic aromatic ring, it has both high electron transportability and hole transportability, which is preferable. Among them, among the skeletons having a π-electron-deficient heterocyclic aromatic ring, a pyridine skeleton, a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), and a triazine skeleton are preferable because they are stable and have good reliability. Particularly, a benzofuropyrimidine skeleton, a benzothienopyrimidine skeleton, a benzofuropyrazine skeleton, and a benzothienopyrazine skeleton are highly acceptive and have good reliability, so they are preferable. Also, among the skeletons having a π-electron-excessive heterocyclic aromatic ring, an acridine skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a furan skeleton, a thiophene skeleton, and a pyrrole skeleton are stable and have good reliability, so it is preferable to have at least one of these skeletons. Note that as the furan skeleton, a dibenzofuran skeleton is preferable, as the thiophene skeleton, a dibenzothiophene skeleton is preferable, respectively. Also, as the pyrrole skeleton, an indole skeleton, a carbazole skeleton, an indolocarbazole skeleton, a bicarba zole skeleton, and a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton are particularly preferable. Note that a substance in which a π-electron-excessive heterocyclic aromatic ring and a π-electron-deficient heterocyclic aromatic ring are directly bonded has both strong electron-donating property of the π-electron-excessive heterocyclic aromatic ring and strong electron-accepting property of the π-electron-deficient heterocyclic aromatic ring, and the energy difference between the S1 level and the T1 level becomes small, so it is particularly preferable because thermally activated delayed fluorescence can be efficiently obtained. Note that instead of the π-electron-deficient heterocyclic aromatic ring, an aromatic ring bonded with an electron-withdrawing group such as a cyano group may be used. Also, as the π-electron-excessive skeleton, an aromatic amine skeleton, a phenazine skeleton, etc. can be used. Also, as the π-electron-deficient skeleton, a xanthene skeleton, etc. Since the heterocyclic compound has a π-electron-excessive heterocyclic aromatic ring and a π-electron-deficient heterocyclic aromatic ring, it has both high electron transportability and hole transportability, which is preferable. Among them, among the skeletons having a π-electron-deficient heterocyclic aromatic ring, a pyridine skeleton, a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), and a triazine skeleton are preferable because they are stable and have good reliability. Particularly, a benzofuropyrimidine skeleton, a benzothienopyrimidine skeleton, a benzofuropyrazine skeleton, and a benzothienopyrazine skeleton are highly acceptive and have good reliability, so they are preferable. Also, among the skeletons having a π-electron-excessive heterocyclic aromatic ring, an acridine skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a furan skeleton, a thiophene skeleton, and a pyrrole skeleton are stable and have good reliability, so it is preferable to have at least one of these skeletons. Note that as the furan skeleton, a dibenzofuran skeleton is preferable, as the thiophene skeleton, a dibenzothiophene skeleton is preferable, respectively. Also, as the pyrrole skeleton, an indole skeleton, a carbazole skeleton, an indolocarbazole skeleton, a bicarba Thioxanthene dioxide skeleton, oxadiazole skeleton, triazole skeleton, imidazo -le skeleton, anthraquinone skeleton, boron-containing skeletons such as phenylborane and borantrene, ben zo nitrile or aromatic rings or heteroaromatic rings having a nitrile group or a cyano group such as cyanobenzene, carbonyl skeletons such as benzophenone, phosphine oxide skeletons, sulfone skeletons, etc. can be used. Thus, at least one of the π-electron-deficient heteroaromatic ring and the π-electron-excessive heteroaromatic ring can be replaced with a π-electron-deficient skeleton and a π-electron-excessive skeleton.

[0157]

Chemical formula

[0158] Note that a TADF material is a material having a function of converting energy from triplet excitation energy to singlet excitation energy due to a small difference between the S1 level and the T1 level and reverse intersystem crossing. Therefore, triplet excitation energy can be upconverted (reverse intersystem crossing) to singlet excitation energy by a small amount of thermal energy, and the singlet excited state can be efficiently generated. Also, triplet excitation energy can be converted into light emission.

[0159] In addition, an exciplex (also called an exciplex or Exciplex) that forms an excited state with two kinds of substances has a function as a TADF material in which the difference between the S1 level and the T1 level is extremely small and triplet excitation energy can be converted into singlet excitation energy.

[0160] ​​​​​​​​​As an index of the T1 level, a phosphorescence spectrum observed at a low temperature (e.g., from 77 K to 10 K) may be used. As the TADF material, a tangent is drawn at the trailing edge on the short-wavelength side of its fluorescence spectrum, and the energy of the wavelength of the extrapolated line is defined as the S1 level. When a tangent is drawn at the trailing edge on the short-wavelength side of the phosphorescence spectrum and the energy of the wavelength of the extrapolated line is defined as the T1 level, it is preferable that the difference between S1 and T1 is 0.3 eV or less, and more preferably 0.2 eV or less. When using a TADF material as the light-emitting center material, it is preferable that the S1 level of the host material is higher than the S1 level of the TADF material. Also, it is preferable that the T1 level of the host material is higher than the T1 level of the TADF material. As the host material of the light-emitting layer, various carrier transport materials such as materials having electron transport properties, materials having hole transport properties, and the above TADF materials can be used. As the material having hole transport properties, the substances listed as the materials having hole transport properties included in the hole transport layer 112 can be preferably used. Examples of the material having electron transport properties include bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnPBT), etc.

[0161]

[0162]

[0163]

[0164] ​​​​​​​​​​​​​Metal complexes such as phenolato zinc(II) (abbreviation: ZnBTZ) and 2-(4-biphenyl (aryl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation : PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl) phenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-tert-butyl) rt-Butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl) phenyl]-9H-carbazole (abbreviation: CO11), 2,2',2''-(1,3,5 -benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TP BI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H -benzimidazole (abbreviation: mDBTBIm-II) and other polyazole skeletons Heterocyclic compounds and 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f ,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothio 2-phenyl-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl 2mCzBPDBq, 4,6 -Bis[3-(phenanthren-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPn P2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation Heterocyclic compounds with diazine skeletons such as 3,5 -Bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCz PPy), 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmP yPB), and other heterocyclic compounds having a pyridine skeleton can be mentioned. Among those described above, dia heterocyclic compounds having a diazine skeleton and heterocyclic compounds having a pyridine skeleton have good reliability and are preferable. In particular, heterocyclic compounds having a diazine (pyrimidine or pyrazine) skeleton have high electron transport properties and contribute to reducing the driving voltage.

[0165] When a fluorescent light-emitting substance is used as a light-emitting material, as the host material, a material having an anthracene skeleton is suitable. When a substance having an anthracene skeleton is used as the host material of a fluorescent light-emitting substance it is possible to realize a light-emitting layer with good light-emitting efficiency and durability. Since many materials having an anthracene skeleton have a deep HOMO level, one aspect of the present invention can be preferably applied Substances having an anthracene skeleton used as the host material include di phenylanthracene skeletons, particularly substances having a 9,10-diphenylanthracene skeleton are preferable because they are chemically stable. Also, when the host material has a carbazole skeleton it is preferable because the hole injection and transport properties are enhanced. However, when it contains a benzocarbazole skeleton in which a benzene ring is further condensed with carbazole, the HOMO is about 0.1 eV shallower than that of carbazole and holes can easily enter, so it is more preferable. In particular, when the host material contains a dibenzocarbazole skeleton, the HOMO is about 0.1 eV shallower than that of carbazole and holes can easily enter In addition, it has excellent hole transport properties and high heat resistance, so it is suitable. Therefore more preferably as the host material are the 9,10-diphenylanthracene skeleton and A substance having a carbazole skeleton (or a benzocarbazole skeleton or a dibenzocarbazole skeleton) at the same time. From the above viewpoints of hole injection and transport properties, instead of the carbazole skeleton, a benzofluorene skeleton or a dibenzofluorene skeleton may be used. Examples of such substances include 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9-[4-(N-carbazolyl)]phenyl-10-phenylanthracene (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-{4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4'-yl}anthracene (abbreviation: FLPPA), etc. In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA show very good properties and are thus preferred choices. In addition, the host material may be a material obtained by mixing a plurality of substances. When using a mixed host material, it is preferable to mix a material having electron transport properties and a material having hole transport properties. By mixing a material having electron transport properties and a material having hole transport properties, the transport properties of the light-emitting layer 113 can be easily adjusted, and the control of the recombination region can also be conveniently performed. The ratio of the content of the material having hole transport properties to the content of the material having electron transport properties is The hole transport property of the light-emitting layer 113 can be easily adjusted, and the control of the recombination region can also be conveniently performed. The ratio of the content of the material having hole transport properties to the content of the material having electron transport properties is 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9-[4-(N-carbazolyl)]phenyl-10-phenylanthracene (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-{4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4'-yl}anthracene (abbreviation: FLPPA), etc. In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA show very good properties and are thus preferred choices. 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9-[4-(N-carbazolyl)]phenyl-10-phenylanthracene (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-{4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4'-yl}anthracene (abbreviation: FLPPA), etc. In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA show very good properties and are thus preferred choices. 9-[4-(N-carbazolyl)]phenyl-10-phenylanthracene (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-{4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4'-yl}anthracene (abbreviation: FLPPA), etc. In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA show very good properties and are thus preferred choices. 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-{4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4'-yl}anthracene (abbreviation: FLPPA), etc. In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA show very good properties and are thus preferred choices. 6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-{4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4'-yl}anthracene (abbreviation: FLPPA), etc. In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA show very good properties and are thus preferred choices. 9-phenyl-10-{4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4'-yl}anthracene (abbreviation: FLPPA), etc. In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA show very good properties and are thus preferred choices. In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA show very good properties and are thus preferred choices. 9-phenyl-10-{4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4'-yl}anthracene (abbreviation: FLPPA), etc. In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA show very good properties and are thus preferred choices. In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA show very good properties and are thus preferred choices. In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA show very good properties and are thus preferred choices. In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA show very good properties and are thus preferred choices.

[0166] In addition, the host material may be a material obtained by mixing a plurality of substances. When using a mixed host material, it is preferable to mix a material having electron transport properties and a material having hole transport properties. When using a mixed host material, it is preferable to mix a material having electron transport properties and a material having hole transport properties. When using a mixed host material, it is preferable to mix a material having electron transport properties and a material having hole transport properties. By mixing a material having electron transport properties and a material having hole transport properties, the transport properties of the light-emitting layer 113 can be easily adjusted, and the control of the recombination region can also be conveniently performed. By mixing a material having electron transport properties and a material having hole transport properties, the transport properties of the light-emitting layer 113 can be easily adjusted, and the control of the recombination region can also be conveniently performed. For the material with charge transport property: the ratio of the material with electron transport property to the material with hole transport property may be 1:9 to 9:1.

[0167] Moreover, exciplexes may be formed between these mixed materials. The exciplex is preferably an exciplex that emits light overlapping with the wavelength of the absorption band on the lowest energy side of the luminescent material By selecting such a combination that forms an exciplex exhibiting light emission overlapping with the wavelength of the absorption band on the lowest energy side of the luminescent material, energy transfer becomes smooth and efficient light emission can be obtained, which is preferable. Also, using such a configuration is preferable because the driving voltage is reduced. Moreover, using such a configuration is preferable because the driving voltage is reduced.

[0168] The electron transport layer 114 is a layer containing a substance having electron transport property. As the substance having electron transport property, those mentioned as the substances having electron transport property that can be used for the above host material can be used.

[0169] Between the electron transport layer 114 and the cathode 102, as the electron injection layer 115, a layer containing an alkali metal such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), etc., an alkaline earth metal or a compound thereof may be provided. The electron injection layer 11 5 may be a layer containing an alkali metal, an alkaline earth metal or a compound thereof in a layer made of a substance having electron transport property, or an electride may be used. As the electride, for example, a substance obtained by adding electrons to a mixed oxide of calcium and aluminum at a high concentration, etc. can be mentioned. Moreover, as the electron injection layer 115, a layer containing the fluoride of the above alkali metal or alkaline earth metal in a microcrystalline state or more (50 wt% or more) in a substance having electron transport property (preferably an organic compound having a bipyridine skeleton) can also be used. The layer has a refractive index

[0170] Note that as the electron injection layer 115, a layer containing the fluoride of the above alkali metal or alkaline earth metal in a microcrystalline state or more (50 wt% or more) in a substance having electron transport property (preferably an organic compound having a bipyridine skeleton) can also be used. Since it is a layer with a low rate, it is possible to provide an EL device with a better external quantum efficiency. It is possible.

[0171] Also, a charge generation layer 116 may be provided instead of the electron injection layer 115 (Fig. 1B). The charge generation layer 116 is a layer that can inject holes into the layer in contact with the cathode side of the layer and electrons into the layer in contact with the anode side by applying a potential. The charge generation layer 116 includes at least a P-type layer 117. The P-type layer 117 is preferably formed using the composite material mentioned as a material that can form the above-mentioned hole injection layer 111. Also, the P-type layer 117 may be formed by laminating a film containing the acceptor material mentioned above as a material constituting the composite material and a film containing a hole transport material. By applying a potential to the P-type layer 117, electrons are injected into the electron transport layer 114 and holes are injected into the cathode 102 which is the cathode, and the EL device operates. When a potential is applied to the P-type layer 117, electrons are injected into the electron transport layer 114 and holes are injected into the cathode 102 which is the cathode, and the EL device operates. The charge generation layer 116 is a layer that can inject holes into the layer in contact with the cathode side of the layer and electrons into the layer in contact with the anode side by applying a potential. The charge generation layer 116 includes at least a P-type layer 117. The P-type layer 117 preferably uses the composite material mentioned as a material that can form the above-mentioned hole injection layer 111. The P-type layer 117 is preferably formed using the composite material mentioned as a material that can form the above-mentioned hole injection layer 111. Also, the P-type layer 117 may be formed by laminating a film containing the acceptor material mentioned above as a material constituting the composite material and a film containing a hole transport material. By applying a potential to the P-type layer 117, electrons are injected into the electron transport layer 114 and holes are injected into the cathode 102 which is the cathode, and the EL device operates. When a potential is applied to the P-type layer 117, electrons are injected into the electron transport layer 114 and holes are injected into the cathode 102 which is the cathode, and the EL device operates. Also, the first layer can be used as the P-type layer 117. As a result, it becomes possible to form the P-type layer 117 with a low refractive index, and an EL device with a good external quantum efficiency can be obtained. Also, the first layer can be used as the P-type layer 117. As a result, it becomes possible to form the P-type layer 117 with a low refractive index, and an EL device with a good external quantum efficiency can be obtained. It is possible.

[0172] Note that the charge generation layer 116 preferably has either or both of an electron relay layer 118 and an electron injection buffer layer 119 in addition to the P-type layer 117. Note that the charge generation layer 116 preferably has either or both of an electron relay layer 118 and an electron injection buffer layer 119 in addition to the P-type layer 117.

[0173] The electron relay layer 118 includes at least a substance having electron transport properties and has a function of preventing the interaction between the electron injection buffer layer 119 and the P-type layer 117 and smoothly transferring electrons. The LUMO level of the substance having electron transport properties contained in the electron relay layer 118 is the LUMO level of the electron-accepting substance in the P-type layer 117 and the charge generation layer 116 in the electron transport layer 114. The electron relay layer 118 includes at least a substance having electron transport properties and has a function of preventing the interaction between the electron injection buffer layer 119 and the P-type layer 117 and smoothly transferring electrons. The LUMO level of the substance having electron transport properties contained in the electron relay layer 118 is the LUMO level of the electron-accepting substance in the P-type layer 117 and the charge generation layer 116 in the electron transport layer 114. The LUMO level of the substance having electron transport properties contained in the electron relay layer 118 is the LUMO level of the electron-accepting substance in the P-type layer 117 and the charge generation layer 116 in the electron transport layer 114. It is preferably between the LUMO level of the substance contained in the layer to be formed. Electron relay layer 118 The specific energy level of the LUMO level in the substance having electron transporting properties used for is preferably -5.0 eV or more, more preferably -5.0 eV or more and -3.0 eV or less. Note that as the substance having electron transporting properties used for the electron relay layer 118, a phthalocyanine-based material or a metal complex having a metal-oxygen bond and an aromatic ligand is preferably used.

[0174] For the electron injection buffer layer 119, an alkali metal, an alkaline earth metal, a rare earth metal, and these compounds (including alkali metal compounds (such as oxides like lithium oxide, halides, carbonates like lithium carbonate and cesium carbonate), alkaline earth metal compounds (including oxides, halides, carbonates), or rare earth metal compounds (including oxides, halides, carbonates)) and other substances with high electron injection properties can be used.

[0175] Further, when the electron injection buffer layer 119 is formed by including a substance having electron transporting properties and a donor substance, as the donor substance, in addition to an alkali metal, an alkaline earth metal, a rare earth metal, and these compounds (including alkali metal compounds (such as oxides like lithium oxide, halides, carbonates like lithium carbonate and cesium carbonate), alkaline earth metal compounds (including oxides, halides, carbonates), or rare earth metal compounds (including oxides, halides, carbonates)), organic compounds such as tetrathianaphthacene (abbreviation: TTN), nickelocene, and decamethylnickelocene can also be used. Note that as the substance having electron transporting properties, a material similar to the material constituting the electron transport layer 114 described above is used for formation. It is possible.

[0176] As the material for forming the cathode 102, gold with a small work function (specifically, 3.8 eV or less), alloys, electrically conductive compounds, and mixtures thereof can be used. Specific examples of such cathode materials include alkali metals such as lithium (Li) and cesium (Cs), and elements belonging to Group 1 or Group 2 of the periodic table such as magnesium (Mg), calcium (Ca), and strontium (Sr), and alloys containing these (MgAg, AlLi, rare earth metals such as europium (Eu) and ytterbium (Yb), and alloys containing these, etc. However, by providing an electron injection layer between the cathode 102 and the electron transport layer, various conductive materials such as Al, Ag, ITO, silicon, or indium tin oxide containing silicon oxide can be used as the cathode 102 regardless of the work function. These conductive materials can be formed into a film using dry methods such as vacuum evaporation and sputtering, inkjet method, spin coating method, etc. Further, it may be formed by a wet method using the sol-gel method, or may be formed by a wet method using a paste of a metal material.

[0177] Also, as a method for forming the EL layer 103, various methods can be used regardless of dry or wet methods. For example, vacuum evaporation, gravure printing, offset printing, screen printing, inkjet method, or spin coating method can be used.

[0178] Also, each of the above electrodes or layers may be formed using different film formation methods.

[0179] Note that the configuration of the layer provided between the anode 101 and the cathode 102 is not limited to the above. However, in order to suppress quenching caused by the proximity of the light-emitting region to the metal used for the electrode or the carrier injection layer, a configuration is preferred in which a light-emitting region where holes and electrons recombine is provided at a site distant from the anode 101 and the cathode 102.

[0180] In addition, the hole transport layer or the electron transport layer in contact with the light-emitting layer 113, particularly the carrier transport layer close to the recombination region in the light-emitting layer 113, suppresses energy transfer from the excitons generated in the light-emitting layer. Therefore, it is preferably composed of a substance having a band gap larger than the band gap of the light-emitting material constituting the light-emitting layer or the band gap of the light-emitting material contained in the light-emitting layer.

[0181] Subsequently, an embodiment of an EL device (also referred to as a stacked element or a tandem element) having a configuration in which a plurality of light-emitting units are stacked will be described with reference to FIG. 1C. This EL device is an EL device having a plurality of light-emitting units between an anode and a cathode.

[0182] These correspond to the anode 101 and the cathode 102 in FIG. 1A, and the same ones as those described in the description of FIG. 1A can be applied. Moreover, the first light-emitting unit 511 and the second light-emitting unit 5 12 may have the same configuration or different configurations.

[0183] When a voltage is applied to the anode 501 and the cathode 502, the charge generation layer 513 has a function of injecting electrons into one light-emitting unit and holes into the other light-emitting unit. That is, in FIG. 1C, when a voltage is applied so that the potential of the anode is higher than the potential of the cathode, the charge generation layer 513 may inject electrons into the first light-emitting unit 511 and holes into the second light-emitting unit 5 12 as long as it can perform such functions.

[0184] The charge generation layer 513 is preferably formed with the same configuration as the charge generation layer 116 described in FIG. 1B. Since the composite material of the organic compound and the metal oxide is excellent in carrier injection property and carrier transport property, low-voltage driving and low-current driving can be realized. In addition, when the surface on the anode side of the light-emitting unit is in contact with the charge generation layer 513, since the charge generation layer 513 can also serve as the hole injection layer of the light-emitting unit, the light-emitting unit does not necessarily need to be provided with a hole injection layer. That's fine.

[0185] Also, when an electron injection buffer layer 119 is provided in the charge generation layer 513, since the electron injection buffer layer 119 serves as the electron injection layer in the light-emitting unit on the anode side, it is not always necessary to form an electron injection layer in the light-emitting unit on the anode side.

[0186] In FIG. 1C, an EL device having two light-emitting units has been described, but for three or more The same also applies to an EL device in which light-emitting units are stacked. This EL device according to the embodiment, like the one described in the embodiment, has a plurality of light-emitting units disposed between a pair of electrodes and separated by a charge generation layer 513, enabling high-brightness light emission while keeping the current density low, and further realizing a longer-lasting device. In addition, a light-emitting device that can be driven at a low voltage and has low power consumption can be realized.

[0187] Also, by making the emission colors of the respective light-emitting units different, it is possible to obtain light emission of a desired color for the entire EL device. For example, in an EL device having two light-emitting units, it is possible to obtain an EL device that emits white light as a whole by obtaining a red and green emission color for the first light-emitting unit and a blue emission color for the second light-emitting unit. There is also.

[0188] In addition, each layer and electrode such as the above-described EL layer 103, the first light-emitting unit 511, the second light-emitting unit 512, and the charge generation layer can be formed by, for example, a vapor deposition method (including a vacuum vapor deposition method), a droplet discharge method (also referred to as an inkjet method), a coating method, a gravure printing method, or the like. They may also contain a low-molecular material, a medium-molecular material (including an oligomer and a dendrimer), or a high-molecular material.

[0189] (Embodiment 3) In this embodiment, a light-emitting device using the EL device described in Embodiment 2 will be described.

[0190] In this embodiment, a light-emitting device manufactured using the EL device described in Embodiment 2 will be described with reference to FIG. 2. Note that FIG. 2A is a top view showing the light-emitting device, and FIG. 2B is a cross-sectional view taken along line A-A' of FIG. 2A. of FIG. 2A.​​​​​ It is a cross-sectional view cut along A-B and C-D. This light-emitting device controls the light emission of the EL device, and includes a drive circuit section (source line drive circuit) 601, a pixel section 602, and a drive circuit section (gate line drive circuit) 603, which are indicated by dotted lines. Also, 604 is a sealing substrate, 605 is a sealing material, and the inside surrounded by the sealing material 605 is a space 607.

[0191] The routing wiring 608 is a wiring for transmitting signals input to the source line drive circuit 601 and the gate line drive circuit 603, and receives video signals, clock signals, start signals, reset signals, etc. from an FPC (Flexible Printed Circuit) 609 that serves as an external input terminal. Here, only the FPC is shown, but a printed wiring board (PWB) may be attached to this FPC. The light-emitting device in this specification includes not only the light-emitting device main body but also a state in which an FPC or a PWB is attached thereto.

[0192] Next, the cross-sectional structure will be described with reference to FIG. 2B. A drive circuit section and a pixel section are formed on the element substrate 610. Here, a source line drive circuit 601 that is a drive circuit section and one pixel in the pixel section 602 are shown.

[0193] The element substrate 610 may be made of a substrate such as glass, quartz, organic resin, metal, alloy, semiconductor, or a plastic substrate made of FRP (Fiber Reinforced Plastics), PVF (polyvinyl fluoride), polyester, acrylic resin, or the like.

[0194] ​​​​​​​​​​​​​The structure of the transistor used in the pixel and the driving circuit is not particularly limited. For example, an inverted staggered type transistor may be used, or a staggered type transistor may be used. Also, a top gate type transistor or a bottom gate type transistor may be used. The semiconductor material used for the transistor is not particularly limited, and for example, silicon, germanium, silicon carbide, gallium nitride, etc. can be used. Alternatively, an oxide semiconductor containing at least one of indium, gallium, and zinc, such as an In-Ga-Zn based metal oxide, may be used.

[0195] The crystallinity of the semiconductor material used for the transistor is also not particularly limited, and an amorphous semiconductor, a semiconductor having crystallinity (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or a semiconductor having a crystalline region in part) may be used. Using a semiconductor having crystallinity is preferable because it can suppress the deterioration of transistor characteristics.

[0196] Here, in addition to the transistor provided in the pixel and the driving circuit, for semiconductor devices such as transistors used in a touch sensor described later, it is preferable to apply an oxide semiconductor. In particular, it is preferable to apply an oxide semiconductor having a wider bandgap than silicon. By using an oxide semiconductor having a wider bandgap than silicon, the current in the off state of the transistor can be reduced.

[0197] The above oxide semiconductor preferably contains at least indium (In) or zinc (Zn). Also, it is more preferable that it is an oxide semiconductor containing an oxide represented by In-M-Zn based oxide (M is a metal such as Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce or Hf). ​​​

[0198] Here, the oxide semiconductor that can be used in one aspect of the present invention will be described below. .

[0199] Oxide semiconductors can be divided into single-crystalline oxide semiconductors and other non-single-crystalline oxide semiconductors. Non-single-crystalline oxide semiconductors include, for example, CAAC-OS (c-axis aligned crystalline oxide semiconductor), polycrystalline oxide semiconductors, nc-OS (nano crystalline oxide semiconductor), pseudo-amorphous oxide semiconductors (a-like OS: amorphous-like oxide semiconductor), and amorphous oxide semiconductors. CAAC-OS has c-axis orientation and a crystal structure in which a plurality of nanocrystals are connected in the a-b plane direction and have strain. The strain refers to a portion where the lattice arrangement changes between a region with an aligned lattice arrangement and another region with an aligned lattice arrangement in the region where the plurality of nanocrystals are connected. The nanocrystals are based on a hexagon, but are not necessarily regular hexagons and may be non-regular hexagons. Also, in the strain, there may be lattice arrangements such as pentagons and heptagons. In CAAC-OS, it is difficult to confirm a clear grain boundary (also called a grain boundary) even in the vicinity of the strain. That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice arrangement. This is because CAAC-OS has a structure in which the formation of grain boundaries is suppressed in the a-b plane direction. In the strain, there may be lattice arrangements such as pentagons and heptagons. There are, for example, CAAC-OS (c-axis aligned crystalline oxide semiconductor), polycrystalline oxide semiconductors, nc-OS (nano crystalline oxide semiconductor), pseudo-amorphous oxide semiconductors (a-like OS: amorphous-like oxide semiconductor), and amorphous oxide semiconductors.

[0200] CAAC-OS has c-axis orientation and a crystal structure in which a plurality of nanocrystals are connected in the a-b plane direction and have strain. The strain refers to a portion where the lattice arrangement changes between a region with an aligned lattice arrangement and another region with an aligned lattice arrangement in the region where the plurality of nanocrystals are connected. The nanocrystals are based on a hexagon, but are not necessarily regular hexagons and may be non-regular hexagons. In the strain, there may be lattice arrangements such as pentagons and heptagons.

[0201] The nanocrystals are based on a hexagon, but are not necessarily regular hexagons and may be non-regular hexagons. In the strain, there may be lattice arrangements such as pentagons and heptagons. In CAAC-OS, it is difficult to confirm a clear grain boundary (also called a grain boundary) even in the vicinity of the strain. That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice arrangement. This is because CAAC-OS has a structure in which the formation of grain boundaries is suppressed in the a-b plane direction. This is because strain can be tolerated due to, for example, the non-dense arrangement of oxygen atoms and the change in the interatomic bond distance caused by the substitution of metal elements.

[0202] In addition, CAAC-OS tends to have a layered crystal structure (also referred to as a layered structure) in which a layer containing indium and oxygen (hereinafter referred to as the In layer) and a layer containing element M, zinc, and oxygen (hereinafter referred to as the (M,Zn) layer) are stacked. Note that indium and element M can substitute for each other. When element M in the (M,Zn) layer is substituted with indium, it can also be represented as an (In,M,Zn) layer. When indium in the In layer is substituted with element M, it can also be represented as an (In,M) layer.

[0203] CAAC-OS is a highly crystalline oxide semiconductor. On the other hand, since it is difficult to confirm distinct crystal grain boundaries in CAAC-OS, it can be said that a decrease in electron mobility due to crystal grain boundaries is unlikely to occur. In addition, the crystallinity of oxide semiconductors may decrease due to the incorporation of impurities or the generation of defects. Therefore, CAAC-OS can also be said to be an oxide semiconductor with few impurities and defects (such as oxygen vacancies (also referred to as V:oxygen O :oxygen vacancy)). Therefore, the physical properties of the oxide semiconductor having CAAC-OS are stable. For this reason, the oxide semiconductor having CAAC-OS is heat-resistant and highly reliable. O

[0204] nc-OS has periodicity in the atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less). Also, nc-OS does not show regularity in the crystal orientation between different nanocrystals. Therefore, no orientation is observed in the entire film. ​​​​​​​​​​​​​​​Thus, depending on the analysis method, nc-OS may not be distinguishable from a-like OS or amorphous oxide semiconductors.

[0205] Note that indium-gallium-zinc oxide (hereinafter referred to as IGZO), which is a type of oxide semiconductor having indium, gallium, and zinc, may have a stable structure by forming the above-described nanocrystals. In particular, since IGZO tends to be difficult to grow crystals in the air, a structure may be more stable with crystals smaller than large crystals (here, crystals of several millimeters or several centimeters), for example, the above-described nanocrystals.

[0206] a-like OS is an oxide semiconductor having a structure between nc-OS and amorphous oxide semiconductors. a-like OS has a loose or low-density region. That is, a-like OS has lower crystallinity than nc-OS and CAAC-OS.

[0207] Oxide semiconductors have various structures and each has different characteristics. An oxide semiconductor according to one aspect of the present invention may have two or more of amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, nc-OS, and CAAC-OS.

[0208] In addition to the above-described oxide semiconductors, CAC (Cloud-Aligned Composite)-OS may be used.

[0209] CAC-OS has a conductive function in part of the material and an insulating function in part of the material, and has a function as a semiconductor in the whole material. When CAC-OS is used for the active layer of a transistor, the conductive function is a function of flowing electrons (or holes) serving as carriers. ​​​​​​​ and the insulating function is the function of not allowing electrons serving as carriers to flow. By causing the conductive function and the insulating function to act complementarily, respectively, a switching function (On / Off function) can be imparted to the CAC-OS. In the CAC-OS, by separating the respective functions, both functions can be enhanced to the maximum extent.

[0210] Also, the CAC-OS has a conductive region and an insulating region. The conductive region has the above-described conductive function, and the insulating region has the above-described insulating function. Also, in the material , the conductive region and the insulating region may be separated at the nanoparticle level. Also, the conductive region and the insulating region may be unevenly distributed in the material, respectively. Also, the conductive region may be observed to be blurred at the periphery and connected in a cloud shape.

[0211] Also, in the CAC-OS, the conductive region and the insulating region are each dispersed in the material with a size of 0.5 nm or more and 10 nm or less, preferably 0.5 nm or more and 3 nm or less. There are cases.

[0212] Also, the CAC-OS is composed of components having different band gaps. For example, the CAC-OS is composed of a component having a wide gap caused by the insulating region and a component having a narrow gap caused by the conductive region. In the case of such a configuration, when carriers flow, mainly carriers flow in the component having a narrow gap. Also, the component having a narrow gap acts complementarily to the component having a wide gap, and carriers also flow in the component having a wide gap in conjunction with the component having a narrow gap. Therefore and When the above CAC-OS is used in the channel formation region of a transistor, a high current driving force, that is, a large on-current, and a high field-effect mobility can be obtained in the on-state of the transistor. That is, CAC-OS can also be referred to as a matrix composite or a metal matrix composite.

[0213] By using the above-described oxide semiconductor material as the semiconductor layer, fluctuations in electrical characteristics can be suppressed, and a highly reliable transistor can be realized. Moreover, the transistor having the above-described semiconductor layer can hold the charge accumulated in the capacitor through the transistor for a long period of time due to its low off-current. By applying such a transistor to a pixel, it is possible to stop the driving circuit while maintaining the gradation of the image displayed in each display area. As a result, an electronic device with extremely low power consumption can be realized. It is preferable to provide an underlayer film for stabilizing the characteristics of the transistor. As the underlayer film, an inorganic insulating film such as a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film can be used, and it can be formed as a single layer or in a stacked manner. The underlayer film can be formed by a sputtering method, a CVD (Chemical Vapor Deposition) method (such as a plasma CVD method, a thermal CVD method, a MOCVD (Metal Organic CVD) method, etc.), an ALD (Atomic Layer Deposition) method, a coating method, a printing method, or the like.

[0214] When the above CAC-OS is used in the channel formation region of a transistor, a high current driving force, that is, a large on-current, and a high field-effect mobility can be obtained in the on-state of the transistor. That is, CAC-OS can also be referred to as a matrix composite

[0215] or a metal matrix composite. By using the above-described oxide semiconductor material as the semiconductor layer, fluctuations in electrical characteristics can be suppressed, and a highly reliable transistor can be realized. Moreover, the transistor having the above-described semiconductor layer can hold the charge accumulated in the capacitor through the transistor for a long period of time due to its low off-current. By applying such a transistor to a pixel, it is possible to stop the driving circuit while maintaining the gradation of the image displayed in each display area. As a result, an electronic device with extremely low power consumption can be realized. It is preferable to provide an underlayer film for stabilizing the characteristics of the transistor. As the underlayer film, an inorganic insulating film such as a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film can be used, and it can be formed as a single layer or in a stacked manner. The underlayer film can be formed by a sputtering method, a CVD (Chemical Vapor Deposition) method (such as a plasma CVD method, a thermal CVD method, a MOCVD (Metal Organic CVD) method, etc.), an ALD (Atomic Layer Deposition) method, a coating method, a printing method, or the like. When the above CAC-OS is used in the channel formation region of a transistor, a high current driving force, that is, a large on-current, and a high field-effect mobility can be obtained in the on-state of the transistor.

[0216] That is, CAC-OS can also be referred to as a matrix composite or a metal matrix composite. By using the above-described oxide semiconductor material as the semiconductor layer, fluctuations in electrical characteristics can be suppressed, and a highly reliable transistor can be realized. Moreover, the transistor having the above-described semiconductor layer can hold the charge accumulated in the capacitor through the transistor for a long period of time due to its low off-current. By applying such a transistor to a pixel, it is possible to stop the driving circuit while maintaining the gradation of the image displayed in each display area. As a result, an electronic device with extremely low power consumption can be realized. It is preferable to provide an underlayer film for stabilizing the characteristics of the transistor. As the underlayer film, an inorganic insulating film such as a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film can be used, and it can be formed as a single layer or in a stacked manner. The underlayer film can be formed by a sputtering method, a CVD (Chemical Vapor Deposition) method (such as a plasma CVD method, a thermal CVD method, a MOCVD (Metal Organic CVD) method, etc.), an ALD (Atomic Layer Deposition) method, a coating method, a printing method, or the like. When the above CAC-OS is used in the channel formation region of a transistor, a high current driving force, that is, a large on-current, and a high field-effect mobility can be obtained in the on-state of the transistor. It should be noted that the undercoat film does not have to be provided if it is not necessary.

[0217] The FET 623 indicates one of the transistors formed in the driver circuit section 601. The driving circuits are made up of various CMOS circuits, PMOS circuits, or NMOS circuits. In this embodiment, a driver integrated type in which a driver circuit is formed on a substrate is shown. However, this is not necessarily required, and the drive circuit can be formed externally instead of on the substrate. .

[0218] The pixel section 602 includes a switching FET 611, a current control FET 612 and its driver. The pixel is formed of a plurality of pixels including an anode 613 electrically connected to the drain. However, the present invention is not limited to this, and the pixel section may be formed by combining three or more FETs and a capacitive element.

[0219] An insulator 614 is formed to cover the end of the anode 613. It can be formed by using a photosensitive acrylic resin film.

[0220] In order to improve the coverage of the EL layer and the like to be formed later, the upper end of the insulator 614 is For example, the material of the insulator 614 is When a positive photosensitive acrylic resin is used, the radius of curvature ( It is preferable that the insulating material 614 has a curved surface having a thickness of 0.2 μm to 3 μm. Either a negative photosensitive resin or a positive photosensitive resin can be used.

[0221] An EL layer 616 and a cathode 617 are formed on the anode 613. , as the material used for the anode 613 that functions as an anode, it is desirable to use a material with a large work function. For example, an ITO film, or an indium tin oxide film containing silicon, 2 ~20 wt% indium oxide film containing zinc oxide, titanium nitride film, chromium film, tungsten film, Zn film, Pt film, etc. In addition to single-layer films, a laminate of a titanium nitride film and a film mainly composed of aluminum , a three-layer structure of a titanium nitride film, a film mainly composed of aluminum, and a titanium nitride film, etc. can be used. Note that when a laminated structure is used, the resistance as wiring is also low, good ohmic contact can be achieved, and it can further function as an anode.

[0222] Also, the EL layer 616 is formed by various methods such as vapor deposition using a vapor deposition mask, inkjet method, spin coating method , etc. The EL layer 616 includes the structure as described in Embodiment 2. Also, as other materials constituting the EL layer 616, low molecular compounds, or high molecular compounds (including oligomers and dendrimers) may be used.

[0223] Furthermore, as the material used for the cathode 617 formed on the EL layer 616 and functioning as a cathode , it is preferable to use a material with a small work function (Al, Mg, Li, Ca, or alloys or compounds thereof (M gAg, MgIn, AlLi, etc.)). Note that when the light generated in the EL layer 616 passes through the cathode 617, as the cathode 617, a thin metal thin film and a laminate of a transparent conductive film (ITO, indium oxide containing 2~20 wt% zinc oxide, indium tin oxide containing silicon , zinc oxide (ZnO), etc.) are preferably used.

[0224] Note that the EL device 618 is formed by the anode 613, the EL layer 616, and the cathode 617. is provided. The EL device 618 is the EL device described in Embodiment 2. Note that although the pixel portion is formed of a plurality of EL devices, in the light-emitting device of the present embodiment, both the EL device described in Embodiment 2 and an EL device having other configurations may be mixed.

[0225] Further, by bonding the sealing substrate 604 to the element substrate 610 with the sealing material 605, an EL device 618 is provided in a space 607 surrounded by the element substrate 610, the sealing substrate 604, and the sealing material 605. Note that the space 607 is filled with a filling material, and in addition to the case where an inert gas (such as nitrogen or argon) is filled, there is also a case where it is filled with a sealing material. It is preferable to form a concave portion in the sealing substrate and provide a drying material therein to suppress deterioration due to the influence of moisture.

[0226] Note that it is preferable to use an epoxy-based resin or glass frit for the sealing material 605. Further, it is desirable that these materials are materials that hardly transmit moisture and oxygen. In addition to a glass substrate or a quartz substrate, as a material for the sealing substrate 604, a plastic substrate made of FRP (Fiber Reinforced Plastics), PVF (polyvinyl fluoride), polyester, or acrylic resin can be used. einforced Plastics), PVF (polyvinyl fluoride), polyester

[0227] Although not shown in FIG. 2, a protective film may be provided on the cathode. The protective film may be formed of an organic resin film or an inorganic insulating film. Further, the protective film may be formed so as to cover the exposed portion of the sealing material 605. Further, the protective film covers the surfaces and sides of the pair of substrates, the sealing layer, the insulating layer, It can be provided to cover the exposed side surfaces such as etc.

[0228] For the protective film, a material that is difficult to permeate impurities such as water can be used. Therefore, water and other impurities can be effectively suppressed from diffusing from the outside to the inside.

[0229] As the material constituting the protective film, oxides, nitrides, fluorides, sulfides, ternary compounds, metals or polymers etc. can be used. For example, aluminum oxide, hafnium oxide, ha hafnium silicate, lanthanum oxide, silicon oxide, strontium titanate, tantalum oxide , titanium oxide, zinc oxide, niobium oxide, zirconium oxide, tin oxide, yttrium oxide , cerium oxide, scandium oxide, erbium oxide, vanadium oxide or indium ium oxide etc. containing materials, materials containing aluminum nitride, hafnium nitride, silicon nitride, tantalum nitride, nit rides such as titanium nitride, niobium nitride, molybdenum nitride, zirconium nitride or gallium nitride etc. containing materials, nitrides containing titanium and aluminum, oxides containing titanium and aluminum , oxides containing aluminum and zinc, sulfides containing manganese and zinc, sulfides containing cerium and strontium, oxides containing erbium and aluminum, it rides containing yttrium and zirconium etc. containing materials can be used.

[0230] The protective film is preferably formed using a film formation method with good step coverage. One such method is the atomic layer deposition (ALD: Atomic Layer Deposition) method. Materials that can be formed using the ALD method are preferably used for the protective film. By using the ALD method, dense films without cracks or pinholes etc. A protective film with reduced defects or having a uniform thickness can be formed. Also, the damage imparted to the processing member when forming the protective film can be reduced.

[0231] For example, by forming a protective film using the ALD method, a surface having a complex uneven shape, or a protective film that is uniform and has few defects can be formed on the upper surface, side surfaces, and back surface of the touch panel. .

[0232] As described above, a light-emitting device manufactured using the EL device described in Embodiment 2 can be obtained.

[0233] Since the light-emitting device in the present embodiment uses the EL device described in Embodiment 2, a light-emitting device having good characteristics can be obtained. Specifically, since the EL device described in Embodiment 2 has good luminous efficiency, it is possible to obtain a light-emitting device with low power consumption.

[0234] FIG. 3 shows an example of a full-color light-emitting device formed by forming an EL device that exhibits white light emission and providing a coloring layer (color filter) or the like. FIG. 3A shows a substrate 1001, an underlying insulating film 1002, a gate insulating film 1003, gate electrodes 1006, 1007, 1008, a first interlayer insulating film 1020, a second interlayer insulating film 1021, a peripheral portion 1042, a pixel portion 1040, a driving circuit portion 1041, anodes 1024W, 1024R, 1024G, 1024 B of the EL device, a partition wall 1025, an EL layer 1028, a cathode 1029 of the EL device, a sealing substrate 1031, a sealing material 1032, etc. are shown.

[0235] Also, in FIG. 3A, coloring layers (a red coloring layer 1034R, a green coloring layer 1034G, a blue coloring The color layer 1034B) is provided on a transparent substrate 1033. 5 may be further provided. A transparent substrate 103 provided with a colored layer and a black matrix. 3 is aligned and fixed to the substrate 1001. 1035 is covered with an overcoat layer 1036. In FIG. The light-emitting layer emits light to the outside without passing through the colored layers, and the light-emitting layer emits light to the outside by passing through the colored layers of each color. The light that does not pass through the colored layers is white, and the light that does pass through the colored layers is red, green, or blue. This allows images to be displayed using four color pixels.

[0236] In FIG. 3B, the color layers (red color layer 1034R, green color layer 1034G, blue color layer 1034R) are 034B) is formed between the gate insulating film 1003 and the first interlayer insulating film 1020. In this way, the colored layer may be provided between the substrate 1001 and the sealing substrate 1031. stomach.

[0237] In the light emitting device described above, the light is taken in toward the substrate 1001 on which the FET is formed. The light emitting device has a bottom emission structure, but the light is taken in from the sealing substrate 1031 side. The light emitting device may have a structure in which the light is emitted from the top (top emission type). A cross-sectional view of a light-emitting device is shown in FIG. 4. In this case, a substrate 1001 that does not transmit light is used. The bottom electrode is used until the connection electrode that connects the FET and the anode of the EL device is fabricated. The third interlayer insulating film 1037 is then formed in the same manner as in the case of the m-emission type light emitting device. The insulating film is formed to cover the electrode 1022. This insulating film may also serve as a planarizing film. The interlayer insulating film 1037 may be formed using the same material as the second interlayer insulating film, or other known materials. It can be done.

[0238] The anodes 1024W, 1024R, 1024G, and 1024B of the EL device are referred to as anodes here, but it can also be a cathode. Also, in the case of a top emission type light emitting device as shown in Fig. 4, it is preferable to use the anode as a reflective electrode. The configuration of the EL layer 1028 is the same as the configuration described for the EL layer 103 in Embodiment 1, and it has an element structure capable of obtaining white light emission.

[0239] In the top emission structure as shown in Fig. 4, sealing can be performed with a sealing substrate 1031 provided with a coloring layer (red coloring layer 1034R, green coloring layer 1034G, blue coloring layer 1034B). A black matrix 1035 may be provided on the sealing substrate 1031 so as to be located between pixels. The coloring layer (red coloring layer 1034R, green coloring layer 1034G, blue coloring layer 1034B) and the black matrix may be covered by an overcoat layer 1036. Note that the sealing substrate 1031 uses a substrate having translucency. Also, although an example of full-color display using four colors of red, green, blue, and white is shown here, it is not particularly limited, and full-color display may be performed using four colors of red, yellow, green, and blue or three colors of red, green, and blue.

[0240] In a top emission type light emitting device, the application of a microcavity structure can be suitably performed. An EL device having a microcavity structure is obtained by using the anode as a reflective electrode and the cathode as a semi-transmissive / semi-reflective electrode. Between the reflective electrode and the semi-transmissive / semi-reflective electrode, there is at least an EL layer and at least a light emitting layer serving as a light emitting region.

[0241] Note that the reflective electrode has a visible light reflectance of 40% to 100%, preferably 70% to 100% %, and its resistivity is a film of 1×10 -2 Ωcm or less. Also, the semi-transmissive / semi-reflective electrode has a visible light reflectance of 20% to 80%, preferably 40% to 70% and its resistivity is a film of 1×10 Ωcm or less. -2

[0242] The light emitted from the light-emitting layer contained in the EL layer is reflected by the reflective electrode and the semi-transmissive / semi-reflective electrode and resonates.

[0243] By changing the thicknesses of the transparent conductive film, the above-described composite material, the carrier transport material, etc., the optical distance between the reflective electrode and the semi-transmissive / semi-reflective electrode can be changed. Thus it is possible to enhance the light of the resonant wavelength and attenuate the light of the non-resonant wavelength between the reflective electrode and the semi-transmissive / semi-reflective electrode.

[0244] Note that the light (first reflected light) reflected back by the reflective electrode causes significant interference with the light (first incident light) directly incident on the semi-transmissive / semi-reflective electrode from the light-emitting layer. Therefore, it is preferable to adjust the optical distance between the reflective electrode and the light-emitting layer to (2n - 1)λ / 4 (where n is a natural number of 1 or more and λ is the wavelength of the amplified emitted light). By adjusting the optical distance, the phases of the first reflected light and the first incident light can be matched to further amplify the light emitted from the light-emitting layer

[0245] Note that in the above configuration, the EL layer may have a structure having a plurality of light-emitting layers or a structure having a single light-emitting layer. For example, it may be combined with the configuration of the tandem type EL device described above ​​​​​​​​​A plurality of EL layers are provided with a charge generation layer interposed therebetween in one EL device, and each EL layer may be applied to a configuration in which one or more light emitting layers are formed.

[0246] By having a microcavity structure, it is possible to enhance the light emission intensity in the front direction of a specific wavelength, so that power consumption can be reduced. In the case of a light emitting device that displays an image with four sub-pixels of red, yellow, green, and blue, in addition to the luminance improvement effect by yellow light emission, a microcavity structure adapted to the wavelength of each color can be applied to all the sub-pixels, resulting in a light emitting device with good characteristics.

[0247] Since the light emitting device in the present embodiment uses the EL device described in Embodiment 2, a light emitting device with good characteristics can be obtained. Specifically, since the EL device described in Embodiment 2 has good luminous efficiency, it is possible to obtain a light emitting device with low power consumption.

[0248] So far, the active matrix type light emitting device has been described. Hereinafter, the passive matrix type light emitting device will be described. FIG. 5 shows a passive matrix type light emitting device fabricated by applying the present invention. Note that FIG. 5A is a perspective view showing the light emitting device, and FIG. 5B is a cross-sectional view taken along X - Y of FIG. 5A. In FIG. 5, an EL layer 955 is provided between an electrode 952 and an electrode 956 on a substrate 951. The end of the electrode 952 is covered with an insulating layer 953. And a partition layer 954 is provided on the insulating layer 953. The side walls of the partition layer 954 have an inclination such that the distance between one side wall and the other side wall becomes narrower as it approaches the substrate surface. That is, the cross-section in the short side direction of the partition layer 954 is trapezoidal. ​​​ The bottom side (the side facing the same direction as the plane of the insulating layer 953 and in contact with the insulating layer 953) is shorter than the top side (the side facing the same direction as the plane of the insulating layer 953 and not in contact with the insulating layer 953). Thus, by providing the partition layer 954, it is possible to prevent defects in the EL device caused by static electricity or the like. Also, in a passive matrix type light emitting device, the EL device described in Embodiment 2 is used, and a light emitting device with good reliability or a light emitting device with low power consumption can be obtained. As described above, the light emitting device can be suitably used as a display device for displaying an image because it is possible to control each of a large number of minute EL devices arranged in a matrix.

[0249] Furthermore, the present embodiment can be freely combined with other embodiments.

[0250] (Embodiment 4)

[0251] In this embodiment, an example of using the EL device described in Embodiment 2 as a lighting device will be described with reference to FIG. 6. FIG. 6B is a top view of the lighting device, and FIG. 6A is a cross-sectional view taken along the line e - f in FIG. 6B.

[0252] In the lighting device according to this embodiment, an anode 401 is formed on a light-transmissive substrate 400 serving as a support. The anode 401 corresponds to the anode 101 in Embodiment 1. When extracting light from the anode 401 side, the anode 401 is formed of a light-transmissive material.

[0253] A pad 412 for supplying a voltage to the cathode 404 is formed on the substrate 400.

[0254] An EL layer 403 is formed on the anode 401. The EL layer 403 is the same as the configuration of the EL layer 103 in Embodiment 1, or the combined configuration of the light-emitting units 511 and 512 and the charge generation layer 513. For the details of these

[0255] configurations, please refer to the corresponding descriptions. A cathode 404 is formed to cover the EL layer 403. The cathode 404 corresponds to the cathode 102 in Embodiment 2. When extracting light from the anode 401 side, the cathode 404 is formed of a material with high reflectivity. The cathode 404 is connected to

[0256] the pad 412 to supply voltage. The lighting device shown in this embodiment has an EL device having the anode 401, the EL layer 403, and the cathode 404. Since the EL device has high luminous efficiency,

[0257] the lighting device in this embodiment can be a lighting device with low power consumption. The lighting device is completed by fixing and sealing the substrate 400 on which the EL device having the above configuration is formed and the sealing substrate 407 using the sealing materials 405 and 406. Either of the sealing materials 405 and 406 can be used. Also, a desiccant can be mixed into the inner sealing material 406 (not shown in

[0258] FIG. 6B), which can adsorb moisture and lead to an improvement in reliability. In addition, by extending a part of the pad 412 and the anode 401 outside the sealing materials 405 and 406, they can be used as external input terminals. Also, an IC chip 420

[0259] As described above, the lighting device according to the present embodiment uses the EL device described in Embodiment 2, and can be a light-emitting device with low power consumption.

[0260] (Embodiment 5) In this embodiment, an example of an electronic device including the EL device described in Embodiment 2 in a part thereof will be described. The EL device described in Embodiment 2 has good luminous efficiency and is an EL device with low power consumption. As a result, the electronic device described in this embodiment can be an electronic device having a light-emitting part with low power consumption.

[0261] Examples of electronic devices to which the above EL device is applied include, for example, a television device (also referred to as a TV or a television receiver), a monitor for a computer, a digital camera, a digital video camera, a digital photo frame, a mobile phone (also referred to as a mobile phone or a mobile phone device), a portable game machine, a portable information terminal, an audio reproduction device, and a large game machine such as a pachinko machine. Specific examples of these electronic devices are shown below.

[0262] FIG. 7A shows an example of a television device. The television device has a display unit 7103 incorporated in a housing 7101. Here, a configuration in which the housing 71 01 is supported by a stand 7105 is shown. The display unit 7103 can display an image, and the display unit 7103 is configured by arranging the EL devices described in Embodiment 2 in a matrix.

[0263] The operation of the television device can be performed by an operation switch provided in the housing 7101 or a separate remote control operation machine 7110. The operation keys 7109 provided in the remote control operation machine 7110 It is possible to perform operations such as channel and volume control, and to operate the video displayed on the display unit 7103. Further, the remote control operation unit 7110 may be configured to include a display unit 7107 for

[0264] displaying information output from the remote control operation unit 7110. Note that the television device is configured to include a receiver, a modem, etc. The receiver can receive general television broadcasts, and further, by connecting to a wired or wireless communication network via a modem, it is

[0265] also possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication. FIG. 7B1 shows a computer, which includes a main body 7201, a housing 7202, a display unit 7203, a keyboard 7204, an external connection port 7205, a pointing device 7206, etc. Note that this computer is manufactured by arranging the EL devices described in Embodiment 2 in a matrix form and using them for the display unit 7203. The computer in FIG. 7B1 may be in a form such as that in FIG. 7B2. The computer in FIG. 7B2 is provided with a second display unit 7210 instead of the keyboard 7204 and the pointing device 7206. The second display unit 7210 is a touch panel type, and input can be performed by operating can be stopped.

[0266] FIG. 7C shows an example of a mobile terminal. The mobile phone includes a display unit 7402 incorporated in a housing 7401, operation buttons 7403, an external connection port 7404, a speaker 7405, a microphone 7406, and the like. The mobile phone has a display unit 7402 formed by arranging EL devices

[0267] described in Embodiment 2 in a matrix. The mobile terminal shown in FIG. 7C can be configured to input information by touching the display unit 7402 with a finger or the like. In this case,

[0268] any operation such as making a call or creating an email can be performed by touching the display unit 7402 with a finger or the like. The screen of the display unit 7402 mainly has three modes. The first is a

[0269] display mode mainly for displaying images, the second is an input mode mainly for inputting information such as characters. The third is a display + input mode in which the two modes of the display mode and the input mode are mixed.

[0270] For example, when making a call or creating an email, the display unit 7402 may be set to a character input mode mainly for inputting characters, and an input operation of the characters displayed on the screen may be

[0271] Also, the switching of the screen mode is performed by touching the display unit 7402 or operating the operation button 7403 of the housing 7401. Further, it can also be switched according to the type of image displayed on the display unit 7402. For example, if the image signal to be displayed on the display unit is a video data, it is switched to the display mode, and if it is text data, it is switched to the input mode.

[0272] Also, in the input mode, the signal detected by the optical sensor of the display unit 7402 is detected, and when there is no input by the touch operation of the display unit 7402 for a certain period, the screen mode may be controlled to be switched from the input mode to the display mode.

[0273] The display unit 7402 can also function as an image sensor. For example, by touching the display unit 74 02 with a palm or a finger and imaging the palm print, fingerprint, etc., personal authentication can be performed. Also, by using a backlight that emits near-infrared light or a sensing light source that emits near-infrared light on the display unit, finger vein, palm vein, etc. can also be imaged.

[0274] Note that the configuration shown in this embodiment can be appropriately combined with the configurations shown in Embodiments 1 to 4 and used.

[0275] As described above, the application range of the light-emitting device including the EL device described in Embodiment 2 is extremely wide, and this light-emitting device can be applied to electronic devices in all fields. By using the EL device described in Embodiment 2, an electronic device with low power

[0276] Figure 8A is a schematic diagram showing an example of a cleaning robot.

[0277] The cleaning robot 5100 has a display 5101 arranged on the upper surface, a plurality of cameras 5102, a brush 5103, and operation buttons 5104 arranged on the side surface. Although not shown, tires, suction ports, etc. are provided on the lower surface of the cleaning robot 5100. The cleaning robot 5100 is also equipped with various sensors such as infrared sensors, ultrasonic sensors, acceleration sensors, piezo sensors, optical sensors, and gyro sensors. In addition, the cleaning robot 5100 is equipped with wireless communication means.

[0278] The cleaning robot 5100 can move automatically, detect dust 5120, and suck the dust through the suction port provided on the lower surface.

[0279] In addition, the cleaning robot 5100 can analyze the images taken by the camera 5102 and determine the presence or absence of obstacles such as walls, furniture, or steps. Also, when an object that is likely to get caught in the brush 5103, such as wiring, is detected by image analysis, the rotation of the brush 5103 can be stopped.

[0280] The display 5101 can display the remaining battery level, the amount of sucked dust, etc. The path traveled by the cleaning robot 5100 may also be displayed on the display 5101. Further, the display 5101 may be a touch panel, and the operation buttons 5104 may be provided on the display 5101.

[0281] The cleaning robot 5100 can communicate with a mobile electronic device 5140 such as a smartphone. The images taken by the camera 5102 can be displayed on the mobile electronic device 5140. Thus, the owner of the cleaning robot 5100 can know the state of the room even when away from home. Also, the display 5101 can be checked using a portable electronic device such as a smartphone.

[0282] The light-emitting device according to one aspect of the present invention can be used for the display 5101.

[0283] The robot 2100 shown in FIG. 8B includes an arithmetic unit 2110, an illuminance sensor 2101, a microphone 2102, an upper camera 2103, a speaker 2104, a display 2105, a lower camera 2106, an obstacle sensor 2107, and a moving mechanism 2108.

[0284] The microphone 2102 has a function of detecting the user's voice and ambient sound, etc. Also, the speaker 2104 has a function of emitting sound. The robot 2100 can communicate with the user using the microphone 2102 and the speaker 2104.

[0285] The display 2105 has a function of displaying various information. The robot 2100 can display the information desired by the user on the display 2105. The display 2105 may be equipped with a touch panel. Also, the display 2105 may be a removable information terminal, and by installing it at a fixed position of the robot 2100, charging and data transfer are made possible.

[0286] The upper camera 2103 and the lower camera 2106 have a function of imaging the surroundings of the robot 2100. Also, the obstacle sensor 2107 uses the moving mechanism 2108 to move the robot 210 It is possible to detect the presence or absence of an obstacle in the traveling direction when 0 moves forward. Robot 21 00 can recognize the surrounding environment and move safely by using the upper camera 2103, the lower camera 2106, and the obstacle sensor 2107. An illuminating device according to one aspect of the present invention can be used for the display 2105.

[0287] FIG. 8C is a diagram showing an example of a goggle-type display. The goggle-type display is, for example a housing 5000, a display unit 5001, a speaker 5003, an LED lamp 5004, a connection terminal 5006, a sensor 5007 (including functions for measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance , light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation , flow rate, humidity, gradient, vibration, odor, or infrared rays), a microphone 5008, a display unit 5002, a support unit 5012, earphones 5013, and the like.

[0288] An illuminating device according to one aspect of the present invention can be used for the display unit 5001 and the second display unit 5002.

[0289] FIG. 9 shows an example in which the EL device described in Embodiment 2 is used in an electric stand which is a lighting device. The electric stand shown in FIG. 9 has a housing 2001 and a light source 200 2. As the light source 2002, the lighting device described in Embodiment 3 may be used.

[0290] FIG. 10 shows an example in which the EL device described in Embodiment 2 is used as an indoor lighting device 3001. Since the EL device described in Embodiment 2 is an EL device with high luminous efficiency , it can be made into a lighting device with low power consumption. Further, the EL device described in Embodiment 2 ​​Since the chair can be made large in area, it can be used as a large-area lighting device. Also, Since the EL device described in Embodiment 2 is thin, it can be used as a thin lighting device. It becomes possible.

[0291] The EL device described in Embodiment 2 can also be mounted on the windshield or dashboard of an automobile. FIG. 11 shows an aspect of using the EL device described in Embodiment 2 on the windshield or dashboard of an automobile. The display areas 5200 to 5203 are display areas provided using the EL device described in Embodiment 2. The display areas 5200 to 5203 are display areas provided using the EL device described in Embodiment 2. The display areas 5200 to 5203 are display areas provided using the EL device described in Embodiment 2.

[0292] The display area 5200 and the display area 5201 are display devices equipped with the EL device described in Embodiment 2 provided on the windshield of the automobile. The EL device described in Embodiment 2 is a display device in a so-called see-through state where the opposite side can be seen through by forming the anode and the cathode with translucent electrodes. In the case of a see-through display even if it is installed on the windshield of an automobile, it can be installed without obstructing the view. When providing a transistor or the like for driving, a translucent transistor such as an organic transistor made of an organic semiconductor material or a transistor using an oxide semiconductor is preferably used. is preferably used. is preferably used. is preferably used. is preferably used.

[0293] The display area 5202 is a display device equipped with the EL device described in Embodiment 2 provided in the pillar portion. By projecting the video from the imaging means provided on the vehicle body onto the display area 5202 the view blocked by the pillar can be complemented. Similarly, the dashboard can be complemented. Similarly, the dashboard The display area 5203 provided in the dashboard portion compensates for the blind spot by projecting the image from the imaging means provided outside the vehicle body, thereby enhancing safety. By projecting the image so as to complement the invisible portion, safety confirmation can be performed more naturally without any sense of discomfort. The display area 5203 provided in the dashboard portion compensates for the blind spot by projecting the image from the imaging means provided outside the vehicle body, thereby enhancing safety. By projecting the image so as to complement the invisible portion, safety confirmation can be performed more naturally without any sense of discomfort. The display area 5203 provided in the dashboard portion compensates for the blind spot by projecting the image from the imaging means provided outside the vehicle body, thereby enhancing safety. By projecting the image so as to complement the invisible portion, safety confirmation can be performed more naturally without any sense of discomfort. The display area 5203 provided in the dashboard portion compensates for the blind spot by projecting the image from the imaging means provided outside the vehicle body, thereby enhancing safety. By projecting the image so as to complement the invisible portion, safety confirmation can be performed more naturally without any sense of discomfort.

[0294] The display area 5203 can also provide various information by displaying navigation information, speedometers, tachometers, driving distances, fuel gauges, gear states, air conditioner settings, etc. The display can be appropriately changed in terms of its display items and layout according to the user's preferences. Incidentally, these information can also be displayed in the display areas 5200 to 5202. Also, the display areas 5200 to 5203 can be used as lighting devices. The display area 5203 can also provide various information by displaying navigation information, speedometers, tachometers, driving distances, fuel gauges, gear states, air conditioner settings, etc. The display can be appropriately changed in terms of its display items and layout according to the user's preferences. Incidentally, these information can also be displayed in the display areas 5200 to 5202. Also, the display areas 5200 to 5203 can be used as lighting devices. The display area 5203 can also provide various information by displaying navigation information, speedometers, tachometers, driving distances, fuel gauges, gear states, air conditioner settings, etc. The display can be appropriately changed in terms of its display items and layout according to the user's preferences. Incidentally, these information can also be displayed in the display areas 5200 to 5202. Also, the display areas 5200 to 5203 can be used as lighting devices. The display area 5203 can also provide various information by displaying navigation information, speedometers, tachometers, driving distances, fuel gauges, gear states, air conditioner settings, etc. The display can be appropriately changed in terms of its display items and layout according to the user's preferences. Incidentally, these information can also be displayed in the display areas 5200 to 5202. Also, the display areas 5200 to 5203 can be used as lighting devices. The display area 5203 can also provide various information by displaying navigation information, speedometers, tachometers, driving distances, fuel gauges, gear states, air conditioner settings, etc. The display can be appropriately changed in terms of its display items and layout according to the user's preferences. Incidentally, these information can also be displayed in the display areas 5200 to 5202. Also, the display areas 5200 to 5203 can be used as lighting devices.

[0295] Also, FIGS. 12A and 12B show a foldable portable information terminal 5150. The foldable portable information terminal 5150 has a housing 5151, a display area 5152, and a bending portion 5153. FIG. 12A shows the portable information terminal 5150 in the unfolded state. FIG. 12B shows the portable information terminal 5150 in the folded state. Despite having a large display area 5152, the portable information terminal 5150 can be folded into a compact and highly portable form. Also, FIGS. 12A and 12B show a foldable portable information terminal 5150. The foldable portable information terminal 5150 has a housing 5151, a display area 5152, and a bending portion 5153. FIG. 12A shows the portable information terminal 5150 in the unfolded state. FIG. 12B shows the portable information terminal 5150 in the folded state. Despite having a large display area 5152, the portable information terminal 5150 can be folded into a compact and highly portable form. Also, FIGS. 12A and 12B show a foldable portable information terminal 5150. The foldable portable information terminal 5150 has a housing 5151, a display area 5152, and a bending portion 5153. FIG. 12A shows the portable information terminal 5150 in the unfolded state. FIG. 12B shows the portable information terminal 5150 in the folded state. Despite having a large display area 5152, the portable information terminal 5150 can be folded into a compact and highly portable form. Also, FIGS. 12A and 12B show a foldable portable information terminal 5150. The foldable portable information terminal 5150 has a housing 5151, a display area 5152, and a bending portion 5153. FIG. 12A shows the portable information terminal 5150 in the unfolded state. FIG. 12B shows the portable information terminal 5150 in the folded state. Despite having a large display area 5152, the portable information terminal 5150 can be folded into a compact and highly portable form. Also, FIGS. 12A and 12B show a foldable portable information terminal 5150. The foldable portable information terminal 5150 has a housing 5151, a display area 5152, and a bending portion 5153. FIG. 12A shows the portable information terminal 5150 in the unfolded state. FIG. 12B shows the portable information terminal 5150 in the folded state. Despite having a large display area 5152, the portable information terminal 5150 can be folded into a compact and highly portable form.

[0296] The display area 5152 can be folded in half by the bending portion 5153. The bending portion 5153 is composed of an extensible member and a plurality of support members. When folding, the extensible member extends. The bending portion 5153 has a curvature radius of 2 mm or more, preferably 3 mm or more, and is folded. The display area 5152 can be folded in half by the bending portion 5153. The bending portion 5153 is composed of an extensible member and a plurality of support members. When folding, the extensible member extends. The bending portion 5153 has a curvature radius of 2 mm or more, preferably 3 mm or more, and is folded. The display area 5152 can be folded in half by the bending portion 5153. The bending portion 5153 is composed of an extensible member and a plurality of support members. When folding, the extensible member extends. The bending portion 5153 has a curvature radius of 2 mm or more, preferably 3 mm or more, and is folded. The display area 5152 can be folded in half by the bending portion 5153. The bending portion 5153 is composed of an extensible member and a plurality of support members. When folding, the extensible member extends. The bending portion 5153 has a curvature radius of 2 mm or more, preferably 3 mm or more, and is folded.

[0297] Note that the display area 5152 may be a touch panel (input / output device) equipped with a touch sensor (input device). The light-emitting device according to one aspect of the present invention can be used for the display area 5152. Also, FIGS. 13A to 13C show a foldable portable information terminal 9310. FIG. 13A shows the portable information terminal 9310 in a deployed state. FIG. 13B shows the portable information terminal 9310 in a state of changing from one of the deployed state or the folded state to the other. FIG. 13C shows the portable information terminal 9310 in a folded state. The portable information terminal 9310 has excellent portability in the folded state and excellent viewability due to a seamless and wide display area in the deployed state.

[0298] Also, FIGS. 13A to 13C show a foldable portable information terminal 9310. FIG. 13A shows the portable information terminal 9310 in a deployed state. FIG. 13B shows the portable information terminal 9310 in a state of changing from one of the deployed state or the folded state to the other. FIG. 13C shows the portable information terminal 9310 in a folded state. The portable information terminal 9310 has excellent portability in the folded state and excellent viewability due to a seamless and wide display area in the deployed state. Also, FIGS. 13A to 13C show a foldable portable information terminal 9310. FIG. 13A shows the portable information terminal 9310 in a deployed state. FIG. 13B shows the portable information terminal 9310 in a state of changing from one of the deployed state or the folded state to the other. FIG. 13C shows the portable information terminal 9310 in a folded state. The portable information terminal 9310 has excellent portability in the folded state and excellent viewability due to a seamless and wide display area in the deployed state. Also, FIGS. 13A to 13C show a foldable portable information terminal 9310. FIG. 13A shows the portable information terminal 9310 in a deployed state. FIG. 13B shows the portable information terminal 9310 in a state of changing from one of the deployed state or the folded state to the other. FIG. 13C shows the portable information terminal 9310 in a folded state. The portable information terminal 9310 has excellent portability in the folded state and excellent viewability due to a seamless and wide display area in the deployed state. Also, FIGS. 13A to 13C show a foldable portable information terminal 9310. FIG. 13A shows the portable information terminal 9310 in a deployed state. FIG. 13B shows the portable information terminal 9310 in a state of changing from one of the deployed state or the folded state to the other. FIG. 13C shows the portable information terminal 9310 in a folded state. The portable information terminal 9310 has excellent portability in the folded state and excellent viewability due to a seamless and wide display area in the deployed state. Also, FIGS. 13A to 13C show a foldable portable information terminal 9310. FIG. 13A shows the portable information terminal 9310 in a deployed state. FIG. 13B shows the portable information terminal 9310 in a state of changing from one of the deployed state or the folded state to the other. FIG. 13C shows the portable information terminal 9310 in a folded state. The portable information terminal 9310 has excellent portability in the folded state and excellent viewability due to a seamless and wide display area in the deployed state. Also, FIGS. 13A to 13C show a foldable portable information terminal 9310. FIG. 13A shows the portable information terminal 9310 in a deployed state. FIG. 13B shows the portable information terminal 9310 in a state of changing from one of the deployed state or the folded state to the other. FIG. 13C shows the portable information terminal 9310 in a folded state. The portable information terminal 9310 has excellent portability in the folded state and excellent viewability due to a seamless and wide display area in the deployed state.

[0299] The display panel 9311 is supported by three housings 9315 connected by a hinge 9313. Note that the display panel 9311 may be a touch panel (input / output device) equipped with a touch sensor (input device). Also, the display panel 9311 can be reversibly deformed from the deployed state to the folded state of the portable information terminal 9310 by bending between the two housings 9315 via the hinge 9313. The light-emitting device according to one aspect of the present invention can be used for the display panel 9311. The display panel 9311 is supported by three housings 9315 connected by a hinge 9313. Note that the display panel 9311 may be a touch panel (input / output device) equipped with a touch sensor (input device). Also, the display panel 9311 can be reversibly deformed from the deployed state to the folded state of the portable information terminal 9310 by bending between the two housings 9315 via the hinge 9313. The light-emitting device according to one aspect of the present invention can be used for the display panel 9311. The display panel 9311 is supported by three housings 9315 connected by a hinge 9313. Note that the display panel 9311 may be a touch panel (input / output device) equipped with a touch sensor (input device). Also, the display panel 9311 can be reversibly deformed from the deployed state to the folded state of the portable information terminal 9310 by bending between the two housings 9315 via the hinge 9313. The light-emitting device according to one aspect of the present invention can be used for the display panel 9311. The display panel 9311 is supported by three housings 9315 connected by a hinge 9313. Note that the display panel 9311 may be a touch panel (input / output device) equipped with a touch sensor (input device). Also, the display panel 9311 can be reversibly deformed from the deployed state to the folded state of the portable information terminal 9310 by bending between the two housings 9315 via the hinge 9313. The light-emitting device according to one aspect of the present invention can be used for the display panel 9311. The display panel 9311 is supported by three housings 9315 connected by a hinge 9313. Note that the display panel 9311 may be a touch panel (input / output device) equipped with a touch sensor (input device). Also, the display panel 9311 can be reversibly deformed from the deployed state to the folded state of the portable information terminal 9310 by bending between the two housings 9315 via the hinge 9313. The light-emitting device according to one aspect of the present invention can be used for the display panel 9311. The display panel 9311 is supported by three housings 9315 connected by a hinge 9313. Note that the display panel 9311 may be a touch panel (input / output device) equipped with a touch sensor (input device). Also, the display panel 9311 can be reversibly deformed from the deployed state to the folded state of the portable information terminal 9310 by bending between the two housings 9315 via the hinge 9313. The light-emitting device according to one aspect of the present invention can be used for the display panel 9311.

Example

[0300] ≪Synthesis Example 1≫ In this example, an organic compound, 10-(2,2’,3,3’,4’,5,5’,6,6’-nonafluoro-4-biphenylyl)9,9-diphenyl-9H,10H-acridine (abbreviation: F9BPPad) and 10,10’-(2,2’,3,3’ 5,5’,6,6’-nonafluoro-4-biphenylyl)9,9-diphenyl-9H,10H-acridine (abbreviation: F9BPPad) and 10,10’-(2,2’,3,3’ 5,5’,6,6’-nonafluoro-4-biphenylyl)9,9-diphenyl-9H,10H-acridine (abbreviation: F9BPPad) and 10,10’-(2,2’,3,3’ ​,5,5’,6,6’-Octafluorobiphenylene-4,4’-diyl)bis(9,9 -diphenyl-9H,10H-acridine)(abbreviation: Pad2F8BP) will be described. The structures of F9BPPad and Pad2F8BP are shown below.

[0301]

Chemical formula

[0302] <Step 1: Synthesis of 10-(2,2’,3,3’,4’,5,5’,6,6’-Nonaf luoro -4-biphenylyl)9,9-diphenyl-9H,10H-acridine and 10,10 ’-(2,2’,3,3’,5,5’,6,6’-Octafluorobiphenylene-4,4 ’-diyl)bis(9,9-diphenyl-9H,10H-acridine)> Place 0.41 g (16.5 mmol) of lithium amide in a three-necked flask, and once perform a decompression operation After that, replace the inside of the flask with nitrogen. Add 15 mL of dehydrated THF to this flask and stir For this suspension, a 45 mL THF solution of 5.0 g (15 mmol) of 9,9-diphenyl-10H-acridine was added dropwise with a syringe. Stir this mixed suspension at room temperature for about 3 hours and react. Cool this mixture to -78 °C. After cooling, add 15 mL of a THF solution of 5.0 g (15 mmol) of decafluorobiphenyl to this mixture dropwise with a syringe and react for about 2 hours. Warm this mixture to room temperature and stir overnight. After stirring, add about 50 mL of water to this mixture and separate the layers. Extract the obtained aqueous layer with ethyl acetate. The separated organic layer and the ethyl acetate obtained by extraction were mixed, washed with a saturated aqueous sodium hydrogen carbonate solution, and separated. The obtained organic layer was dried over magnesium sulfate and then filtered and evaporated The solvent was distilled off using a rotary evaporator. The resulting mixture was separated and purified by silica gel column chromatography to obtain two types of white solids. Of the two types of white solids obtained, one was 10-(2,2’,3,3’,4’,5,5’,6,6’-nonafluoro-4-biphenylyl)9,9-diphenyl-9H,10H-acridine (abbreviation: F9BPPad) 3.2 g (4.95 mmol) (yield 33%), and the other was 10,10’-(2,2’,3,3’,5,5’,6,6’-octafluorobiphenylene-4,4’-diyl)bis(9,9-diphenyl-9H,10H-acridine) (abbreviation: Pad2F8BP) 3.1 g (3.2 0 mmol), (yield 43%). The synthesis scheme of Step 1 is shown below. (4.95 mmol) (yield 33%), and the other was 10,10’-(2,2’,3,3’, 5,5’,6,6’-octafluorobiphenylene-4,4’-diyl)bis(9,9- diphenyl-9H,10H-acridine) (abbreviation: Pad2F8BP) 3.1 g (3.2 0 mmol), (yield 43%). The synthesis scheme of Step 1 is shown below.

[0303]

Chemical formula

[0304] The white solid obtained in Step 1 above was analyzed by nuclear magnetic resonance spectroscopy ( 1 1H-NMR and 19 19F-N MR). The numerical data are shown below. Also, the 1 1H-NMR chart of F9BPPad is shown in Figures 14A and 14B, 19 the 19F-NMR chart is shown in Figures 15A and 15B, and the 1H-NMR chart of 1 Pad2F8BP is shown in Figures 16A and 16B, and the 19 19F-NMR chart is shown in Figures 17A and 17B. From these results, by the synthesis method of Step 1, 10- (2,2’,3,3’,4’,5,5’,6,6’-nonafluoro-4-biphenylyl) 9,9-diphenyl-9H,10H-acridine and 10,10’-(2,2’,3, 3’,5,5’,6,6’-Octafluorobiphenylene-4,4’-diyl)bis(9 ,9-diphenyl-9H,10H-acridine) could be confirmed to have been synthesized.

[0305] F9BPPad 1 H-NMR. δ(CDCl3): 7.17 - 7.28(m, 8H), 6.94 - 7.0 4(m, 8H), 6.48(d, 2H, J = 7.5Hz). 19 F-NMR. δ(CDCl3): -159.9, -149.3, -141.7, -1 36.9, -136.3.

[0306] Pad2F8BP 1 H-NMR. δ(CDCl3): 7.18 - 7.29(m, 16H), 6.95 - 7. 05(m, 16H), 6.50(d, 4H, J = 8.0Hz). 19 F-NMR. δ(CDCl3): -141.0, -136.0.

[0307] Next, the obtained solid was purified by sublimation using the train sublimation method. 3.1 g of the solid of F9BPPad was used for sublimation purification. When heated at 195 °C under the conditions of a pressure of 3.0 Pa and an argon flow rate of 17.9 mL / m in, 2.9 g of a white crystalline solid was obtained with a recovery rate of 94%. Also, when 3.0 g of the solid of Pad2F8BP was used for sublimation purification and heated at 290 °C under the conditions of a pressure of 3.0 Pa and an argon flow rate of 18.8 mL / min, 2.6 g of a white solid was obtained with a recovery rate of 89%.

[0308] Subsequently, the absorption spectrum and emission spectrum of F9BPPad in a toluene solution are shown in Fig. 1 9, and the absorption spectrum and emission spectrum of Pad2F8BP in a toluene solution are shown in Fig. 2 shown in 0.

[0309] Next, the F9BPPad and Pad2F8BP obtained in this example were analyzed by liquid chromatography mass spectrometry (Liquid Chromatography Mass Spectrometry, abbreviated: LC / MS analysis).

[0310] For the LC / MS analysis, LC (liquid chromatography) separation was performed using an Ultimate 3000 manufactured by Thermo Fisher Scientific, and MS analysis (mass spectrometry) was performed using a Q Exactive manufactured by Thermo Fisher Scientific.

[0311] For the LC separation, any column was used, the column temperature was set at 40 °C, the liquid delivery conditions were appropriately selected for the solvent, the sample was prepared by dissolving F9BPPad and Pad2F8BP at an arbitrary concentration in an organic solvent, and the injection volume was set at 5.0 μL.

[0312] Measurement of the MS of m / z = 648.13, which is an ion derived from F9BPPad, was performed by the PRM method. 2 For the PRM setting, the mass range of the target ion was set at m / z = 648.13 ± 2.0 (isolation window = 4), and the detection was performed in the positive mode. The energy NCE (Normalized Collision Energy) for accelerating the target ion in the collision cell was set at 20 and measured. The obtained MS spectrum is shown in Fig. 29.

[0313] Measurement of the MS of m / z = 961.28, which is an ion derived from Pad2F8BP, was performed by the PRM method. 2 For the PRM setting, the mass range of the target ion was set at m / z = 961.28 ± Set it to 2.0 (isolation window = 4), and the detection was performed in the positive mode. The energy NCE (Normalized Collision Energy) for accelerating the target ions in the collision cell was set to 30 and measured. The obtained MS spectrum is shown in Figure 30.

Example

[0314] In this example, an EL device and a comparative EL device of one aspect of the present invention described in the embodiment will be described. The structural formula of the organic compound used in this example is shown below.

[0315]

Chemical formula

[0316] (Method for manufacturing EL device 1-0) First, indium tin oxide (ITSO) containing silicon oxide was formed on a glass substrate by sputtering to form the anode 101. The film thickness was 70 nm, and the electrode area was 2 mm × 2 mm.

[0317] Next, as a pretreatment for forming the EL device on the substrate, the substrate surface was washed with water, baked at 200 °C for 1 hour, and then subjected to UV ozone treatment for 370 seconds.

[0318] After that, the substrate was introduced into a vacuum evaporation apparatus whose internal pressure was reduced to about 10 Pa, and vacuum baking was performed at 170 °C for 30 minutes in the heating chamber of the vacuum evaporation apparatus. Then, the substrate was allowed to cool for about 30 minutes. -4

[0319] Next, with the surface on which the anode 101 is formed facing downward, the substrate on which the anode 101 is formed was placed in a vacuum evaporation apparatus. ​​​​​​​​Fixed to a substrate holder provided inside a vacuum evaporation device, evaporation using resistive heating is performed on the anode 101 By the method, 10-(2,2’,3,3’,4’,5,5’ ,6,6’-nonafluoro-4-biphenylyl)9,9-diphenyl-9H,10H-a carbazole (abbreviation: F9BPPad) and molybdenum(VI) oxide are co-evaporated at a weight ratio of 2:0.5 (=F9BPPad:MoOx) to form a hole injection layer 111 with a thickness of 50 nm .

[0320] Next, N-(1,1’-biphenyl -4-yl)-9,9-dimethyl-N-[4-(9-phenyl-9H-carbazol-3 -yl)phenyl]-9H-fluorene-2-amine (abbreviation: PCBBiF) represented by the above structural formula (i) is evaporated to a film thickness of 20 nm to form a hole transport layer 112

[0321] Subsequently, 2-[3’-(dibenzothiophen-4-yl) biphenyl-3-yl]dibenz[f,h]quinoxaline (abbreviation: 2mDBTBPDBq -II), PCBBiF, and (acetylacetonato) bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dpp m)2(acac)]) represented by the above structural formula (iii) are co-evaporated at a weight ratio of 0.7:0.3:0.06 (=2mDBTBPD Bq-II:PCBBiF:[Ir(dppm)2(acac)]) to a thickness of 20 n m, and then co-evaporated at a weight ratio of 0.8:0.2:0.06 (=2mDBTBPDBq-II:PCBB iF:[Ir(dppm)2(acac)]) to a thickness of 20 nm to form a light-emitting layer 1 13

[0322] Thereafter, 2mDBTBPDBq-II was deposited on the light-emitting layer 113 to a film thickness of 30 nm. After that, 2,9-bis(naphthalen-2-yl)-4, 7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen) represented by the above structural formula (iv) was deposited to a film thickness of 10 nm to form the electron transport layer 114.

[0323] After forming the electron transport layer 114, lithium fluoride (LiF) was deposited to a thickness of 1 nm to form the electron injection layer 115, and then aluminum was deposited to a film thickness of 200 nm to form the cathode 102, thereby fabricating the EL device 1-0 of this example.

[0324] (Fabrication method of EL device 1-1 to EL device 1-3) In EL device 1-1, the hole injection layer 111 in EL device 1-0 was formed by co-depositing F9BPPad and molybdenum(VI) oxide in a weight ratio of 2:0.5 (=F9BPPad: molybdenum oxide) to a thickness of 50 nm. After that, 4,4’,4’’ -(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P -II) and molybdenum(VI) oxide were co-deposited in a weight ratio of 2:0.5 (=DBT3P-II: molybdenum oxide) to a thickness of 5 nm to form the hole injection layer 111, and the rest was fabricated in the same manner as EL device 1-0. -II) and molybdenum(VI) oxide were co-deposited in a weight ratio of 2:0.5 (=DBT3P-II: molybdenum oxide) to a thickness of 5 nm to form the hole injection layer 111, and the rest was fabricated in the same manner as EL device 1-0. After co-depositing to form a layer with a thickness of 10 nm for the layer formed by co-depositing DBT3P-II and molybdenum(VI) oxide in EL device 1-2 compared to EL device 1-1, the rest was fabricated in the same manner as EL device 1-1. It was fabricated in the same manner as EL device 1-0 except that the layer formed by co-depositing DBT3P-II and molybdenum(VI) oxide in EL device 1-2 was formed to a thickness of 10 nm compared to EL device 1-1, and the rest was fabricated in the same manner as EL device 1-1.

[0325] EL device 1-2 was fabricated in the same manner as EL device 1-1 except that the layer formed by co-depositing DBT3P-II and molybdenum(VI) oxide in EL device 1-1 was formed to a thickness of 10 nm. After that, it was fabricated in the same manner as EL device 1-1. It was fabricated in the same manner as EL device 1-1.

[0326] EL device 1-3 is a compound of DBT3P-II and molybdenum oxide in EL device 1-1. The layer formed by co-evaporation was formed to a thickness of 15 nm, but otherwise the same as EL device 1-1. It was made in.

[0327] (Method of Fabricating EL Devices 2-0 to 2-3) EL device 2-0 was fabricated using the same F9BP as in hole injection layer 111 of EL device 1-0. Pad is 10,10'-(2,2',3,3',5,5 ',6,6'-Octafluorobiphenylene-4,4'-diyl)bis(9,9-diphenyl) The other components were changed to 2H,10H-acridine (abbreviation: Pad2F8BP) and the EL device was It was prepared in the same manner as 1-0.

[0328] EL device 2-1 is an EL device in EL device 1-1, and EL device 2-2 is an EL device in The EL device 2-3 in 1-2 is the same as the F9BPPad in the EL device 1-3. Each was prepared by replacing it with Pad2F8BP.

[0329] (Method of Fabricating Comparative EL Devices 1-0 to 1-3) Comparative EL device 1-0 is the same as that of EL device 1-0 except that F9 An EL device was fabricated in the same manner as in EL device 1-0, except that BPPad was changed to DBT3P-II.

[0330] Comparative EL Device 1-1 is the EL device 1-1, and Comparative EL Device 1-2 is the EL In Device 1-2, Comparative EL Device 1-3 is F9B in EL Device 1-3. The PPad was replaced with DBT3P-II.

[0331] (Method of Fabricating Comparative EL Devices 2-0 to 2-3) The comparative EL device 2-0 is the F9 used in the hole injection layer 111 in the EL device 1-0 The BPPad was changed to 4,4,8,8,12,12-hexa-p- tolyl-4H-8H-12H-12C-aza-dibenzo[cd,mn]pyrene (abbreviation: F ATPA), and it was fabricated in the same manner as the EL device 1-0 except for this change.

[0332] The comparative EL device 2-1 is the one in the EL device 1-1, the comparative EL device 2-2 is the one in the EL device 1-2, and the comparative EL device 2-3 is the F9B PPad in the EL device 1-3, respectively changed to FATPA for fabrication.

[0333] Also, the device structures of the EL devices 1-0 to 1-3, the EL devices 2-0 to 2-3, the comparative EL devices 1-0 to 1-3, and the comparative EL devices 2-0 to 2-3 are summarized in the following table.

Table 1

[0334]

Table 1

[0335] These EL devices were sealed with a glass substrate in a nitrogen atmosphere glove box so that the EL devices were not exposed to the atmosphere (applying a sealing material around the elements and performing UV treatment and heat treatment at 80 °C for 1 hour during sealing). After that, the initial characteristics of these EL devices were measured. Note that no special measures were taken on the glass substrate on which the EL devices were fabricated to improve the extraction efficiency.

[0336] Also, in Fig. 18, F9BPPad, Pad2F8BP, DBT3P-II, and FATP The results of measuring the refractive index of the composite material using A are shown. Note that for the refractive index n, there are n_ordinary which is the refractive index of the ordinary ray, n_extra - ordinary which is the refractive index of the extraordinary ray, and n_average which is the average value of the two. When simply referred to as "refractive index" in this specification, if anisotropy analysis was not performed, it may be read as n_average, and if anisotropy analysis was performed, it may be read as n_ordinary. Incidentally, the value obtained by dividing the sum of twice the value of n_Ordinary and the value of n_extra - ordinary by 3 is n_average. Note that DBT3P - II is a material that can obtain good characteristics when used as an electron - donating material in the hole - injection layer. rate and n_extra - ordinary which is the refractive index of the extraordinary ray, and n_average which is the average value of the two. When simply referred to as "refractive index" in this specification, if anisotropy analysis was not performed, it may be read as n_average, and if anisotropy analysis was performed, it may be read as n_ordinary. Incidentally, the value obtained by dividing the sum of twice the value of n_Ordinary and the value of n_extra - ordinary by 3 is n_average. Note that DBT3P - II is a material that can obtain good characteristics when used as an electron - donating material in the hole - injection layer. Note that DBT3P - II is a material that can obtain good characteristics when used as an electron - donating material in the hole - injection layer. Note that DBT3P - II is a material that can obtain good characteristics when used as an electron - donating material in the hole - injection layer.

[0337] As shown in FIG. 18, the composite material using F9BPPad and Pad2F8BP is a material with a low refractive index. Since the EL device of one aspect of the present invention forms a hole - transport layer using the composite material, it is possible to obtain an EL device with a small refractive index of the hole - transport layer. Note that the refractive index of other organic compounds used in the EL device is about 1.70 to 1.90. Note that the refractive index of other organic compounds used in the EL device is about 1.70 to 1.90. Note that the refractive index of other organic compounds used in the EL device is about 1.70 to 1.90.

[0338] The luminance - current density characteristics of EL device 1 - 0, EL device 2 - 0, comparative EL device 1 - 0, and comparative EL device 2 - 0 are shown in FIG. 21, the current efficiency - luminance characteristics are shown in FIG. 22, the luminance - voltage characteristics are shown in FIG. 23, the current - voltage characteristics are shown in FIG. 24, the external quantum efficiency - luminance characteristics are shown in FIG. 25, and the emission spectrum is shown in FIG. 26.

[0339] Also, for EL devices 1 - 0 to 1 - 3, EL devices 2 - 0 to 2 - 3, comparative EL devices 1 - 0 to 1 - 3, and comparative EL devices 2 - 0 to 2 - 3 The main characteristics near 2 - 0 to 1000 cd / m of the comparison EL device 2 - 3 2 are shown in Table 2 . For the measurement of luminance and CIE chromaticity, a color luminance meter (Topcon Corporation, BM - 5A ) was used, and for the measurement of the emission spectrum, a multi - channel spectroscope (Hamamatsu Photonics, P MA - 11) was used.

[0340]

Table 2

[0341] From FIGS. 21 to 26, it can be seen that the EL devices 1 - 0 and EL device 2 - 0, which are EL devices of one aspect of the present invention, have the same driving performance as the comparison EL device 1 - 0 and comparison EL device 2 - 0, and are EL devices with good luminous efficiency.

[0342] In this example, since EL devices are fabricated using materials with different refractive indices, even if each EL device is formed with the same film thickness, the optical distance between the electrodes will be different from that of the EL device formed. Also, since it is difficult to precisely control the film thickness in the fabrication of EL devices by evaporation, the elements may not be fabricated as expected in terms of the pre - assumed film thickness.

[0343] In the EL device in this example, since aluminum is used as the cathode, the reflection at the cathode is large, and also, to some extent, reflection occurs at the anode due to the difference in refractive index. Therefore, the structure is such that light is amplified or attenuated by interference . Which wavelength of light is interfered with or amplified principally depends on the optical distance between the electrodes. Here, since substances have their own emission spectra, at wavelengths with high emission intensity

[0344] ​ If amplification is performed, amplification can be carried out efficiently, and its luminous efficiency will be high. On the other hand, when light with a low wavelength of the emission intensity is amplified, the efficiency will be lower than in the previous case. That is, the luminous efficiency will increase or decrease depending on the optical distance between the electrodes.

[0345] As described above, in this embodiment, materials with different refractive indices are used, and due to the difficulty of precise control of the film thickness, the optical distances between the electrodes are different, and a precise comparison of the luminous efficiency cannot be made in Fig. 25.

[0346] Therefore, Fig. 27 shows a diagram representing the relationship between the chromaticity x and the external quantum efficiency in the vicinity of 1000 cd / m² for EL devices 1-0 to EL devices 1-3, EL devices 2-0 to EL devices 2-3, comparative EL devices 1-0 to comparative EL devices 1-3, and comparative 2 EL devices 2-0 to comparative EL devices 2-3. The horizontal axis is the chromaticity x because the interference effect is determined by the optical distance between the electrodes, and light that has received a similar interference effect using the same light-emitting substance will have a similar emission spectrum. Therefore,

[0347] emission with the same chromaticity is considered to have received the same interference effect and the optical distance between the electrodes is the same. That is, by using Fig. 27, the difference in refractive index of the aforementioned materials and the difference in optical distance due to the vapor deposition operation can be canceled, and the effect of improving the luminous efficiency by the low refractive index layer can be verified purely.

[0348] That is, by using Fig. 27, the difference in refractive index of the aforementioned materials and the difference in optical distance due to the vapor deposition operation can be canceled, and the effect of improving the luminous efficiency by the low refractive index layer can be verified purely.

[0349] From Fig. 27, for EL devices using Pad2F8BP and FATPA having similar refractive indices Compared with EL devices 2-0 to 2-3, EL devices 2-0 to 2-3 have the same external quantum efficiency at the same chromaticity. In addition, EL device 1 using F9BPPad with a lower refractive index, compared with EL devices 2-0 to 2-3, EL devices 2-0 to 2-3 show a higher external quantum efficiency, and a comparative EL device 1-0 to 1- using DBT3P-II with a normal refractive index as the organic compound of the EL device, compared with 1- 0 to 1-3, an efficiency improvement effect of up to 15% could be obtained.

[0350] As can also be seen from Table 2, the EL device according to one aspect of the present invention is an EL device with no significant deterioration such as drive voltage and good drive characteristics.

[0351] In addition, FIG. 28 shows a diagram representing the change in luminance with respect to the drive time when a constant current drive of 2 mA is performed on EL device 1-0, EL device 1-2, EL device 2-0, EL de vice 2-2, comparative EL device 1-0, comparative EL device 1-2, and comparative EL de vice 2-0, and comparative EL device 2-2. From FIG. 28, no significant difference is seen in the change in luminance of each EL device, and it was found that the EL device according to one aspect of the present invention is an EL device that exhibits good luminous efficiency while maintaining a good life.

Explanation of Signs

[0352] 101: Anode, 102: Cathode, 103: EL layer, 111: Hole injection layer, 112: Hole transport layer, 113: Light emitting layer, 114: Electron transport layer, 115: Electron injection layer, 116: Charge generation layer, 117: P-type layer, 118: Electron relay layer, 119: Electron injection buffer layer, 400: Substrate, ​​401: Anode, 403: EL layer, 404: Cathode, 405: Sealing material, 406: Sealing material, 407: Sealing substrate, 412: Pad, 420: IC chip, 501: Anode, 502: Cathode , 511: First light-emitting unit, 512: Second light-emitting unit, 513: Charge generation layer, 6 01: Driving circuit section (source line driving circuit), 602: Pixel section, 603: Driving circuit section (gate line driving circuit), 604: Sealing substrate, 605: Sealing material, 607: Space, 608: Wiring, 6 09: FPC (Flexible Printed Circuit), 610: Element substrate, 611: Switching FET, 612: Current control FET, 613: Anode, 614: Insulator, 616: EL layer, 617: Cathode, 618: EL device, 951: Substrate, 952: Electrode, 953: Insulating layer, 954: Partition layer, 955: EL layer, 956: Electrode, 1001: Substrate, 1002: Underlying insulating film, 1003: Gate insulating film, 1006: Gate electrode, 1007: Gate electrode, 1008: Gate electrode, 1020: First interlayer insulating film, 1021: Second interlayer insulating film, 1 022: Electrode, 1024W: Anode, 1024R: Anode, 1024G: Anode, 1024B: Anode, 1025: Partition, 1028: EL layer, 1029: Cathode, 1031: Sealing substrate, 10 32: Sealing material, 1033: Transparent base material, 1034R: Red coloring layer, 1034G: Green coloring layer, 1034B: Blue coloring layer, 1035: Black matrix, 1036: Over coat layer, 1037: Third interlayer insulating film, 1040: Pixel section, 1041: Driving circuit section , 1042: Peripheral section, 2001: Housing, 2002: Light source, 2100: Robot, 2110 : Arithmetic unit, 2101: Illuminance sensor, 2102: Microphone, 2103: Upper camera , 2104: Speaker, 2105: Display, 2106: Lower camera, 2107: Obstacle Pest sensor, 2108: Moving mechanism, 3001: Lighting device, 5000: Housing, 5001: Front Display unit, 5002: Second display unit, 5003: Speaker, 5004: LED lamp, 500 6: Connection terminal, 5007: Sensor, 5008: Microphone, 5012: Support part, 50 13: Earphone, 5100: Cleaning robot, 5101: Display, 5102: Camera , 5103: Brush, 5104: Operation button, 5150: Portable information terminal, 5151: Housing , 5152: Display area, 5153: Bending part, 5120: Garbage, 5200: Display area, 52 01: Display area, 5202: Display area, 5203: Display area, 7101: Housing, 7103 : Display unit, 7105: Stand, 7107: Display unit, 7109: Operation key, 7110: Li Remote control operation machine, 7201: Main body, 7202: Housing, 7203: Display unit, 7204: Keyboard board, 7205: External connection port, 7206: Pointing device, 7210: Second display unit, 7401: Housing, 7402: Display unit, 7403: Operation button, 7404: External connection port, 7405: Speaker, 7406: Microphone, 9310: Portable information terminal, 931 1: Display panel, 9312: Display area, 9313: Hinge, 9315: Housing

Claims

1. An EL device having a first layer and a light-emitting layer between an anode and a cathode, wherein the first layer is located between the anode and the light-emitting layer, the first layer contains a first substance and a second substance, the first substance is a substance that exhibits electron-donating properties with respect to the second substance, the first substance has an arylamine skeleton or an acridine skeleton, the first substance has a fluorine atom, and the refractive index of the first substance is 1.8 or less.

2. An EL device having a first layer, a first light-emitting layer, and a second light-emitting layer between an anode and a cathode, wherein the first layer is located between the first light-emitting layer and the second light-emitting layer, the first layer contains a first substance and a second substance, the first substance is a substance that exhibits electron-donating properties with respect to the second substance, the first substance has an arylamine skeleton or an acridine skeleton, the first substance has a fluorine atom, and the refractive index of the first substance is 1.8 or less.

3. In Claim 1 or Claim 2, the first substance has one or more aromatic rings in which the lone pair of electrons of the nitrogen atom in the arylamine skeleton or the acridine skeleton can be conjugated, and one or two of the aromatic rings are bonded to fluorine atoms.

4. In any one of Claims 1 to 3, the EL device in which the number of fluorine atoms contained in the first substance is 5 or more.

5. In any one of Claims 1 to 4, the EL device in which the fluorine atoms contained in the first substance are 7 atomic% or more and 40 atomic% or less.

6. In any one of Claims 1 to 5, the EL device in which the aromatic ring to which the fluorine atom is bonded is a benzene ring or a naphthalene ring.

7. An EL device according to any one of Claims 1 to 6, and at least one of a transistor and a substrate.

8. An EL device according to Claim 7, and at least one of a sensor, an operation button, a speaker, and a microphone.

9. An illumination device having an EL device according to Claim 7 and a housing. ​

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