Transfer chambers, associated semiconductor processing systems, and methods for preventing moisture from entering transfer chamber

Abstract

To provide transfer chambers, semiconductor processing systems including transfer chambers, and methods for preventing moisture from entering a transfer chamber.SOLUTION: The transfer chambers disclosed include one or more gas distributors for forming a gas curtain across openings in the transfer chamber thereby preventing moisture from entering the transfer chamber.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure generally relates to the field of semiconductor processing apparatus, systems and methods, and to the field of manufacturing of devices and integrated circuits. More specifically, the present disclosure relates to a transfer chamber configured to reduce moisture content, a semiconductor processing system including such a transfer chamber, and related methods for reducing the moisture content within the transfer chamber associated with a semiconductor processing system.

Background Art

[0002] Generally, semiconductor processing systems use transfer chambers during the manufacture of semiconductor devices and integrated circuits (ICs). For example, an untreated substrate can be transferred from a cassette into a transfer chamber such as a load lock chamber. Then, the substrate can be transferred from the transfer chamber to a process module for processing. When the process is completed in one process module, the substrate can be transferred to a different process module to continue processing the substrate. During transfer of the substrate between different process modules, the substrate may pass through one or more different transfer chambers multiple times. When processing of the substrate is completed, the substrate is typically returned to the transfer chamber for cooling, post-processing, and transfer (e.g., transfer out of the semiconductor processing system).

[0003] The transfer chamber generally uses gate valves to enable a substrate to controllably enter and exit the transfer chamber while maintaining the environment (e.g., pressure and / or gas atmosphere) in an adjacent chamber of a semiconductor processing system connected to the transfer chamber. When the gate valve is open to allow movement of the substrate, unwanted moisture can enter the transfer chamber. However, moisture in the transfer chamber (and in adjacent chambers) can adversely affect the substrate, the processes performed in the process modules, and / or the semiconductor processing system itself. For example, moisture can introduce particle contamination that can affect the quality of the substrate and any layers deposited thereon. As another example, moisture can interfere with the vacuum conditions in the transfer chamber and adjacent vacuum chambers. Also, the presence of moisture can result in an increase in the time required to evacuate the transfer chamber and / or adjacent chambers to a low pressure, which can slow down the throughput of the substrate through the entire device / IC manufacturing process and thus the semiconductor processing system. Further, the transfer chamber generally provides a clean and stable environment for handling delicate materials disposed on the substrate, and moisture in such a transfer chamber can potentially damage these materials.

[0004] Accordingly, there is a general desire for a transfer chamber configured to reduce the amount of moisture within the transfer chamber and within a semiconductor processing system that includes such a transfer chamber, and for related methods to prevent moisture from entering the transfer chamber.

[0005] Any discussion, including the discussion of the problems and solutions described in this section, is included in this disclosure only for the purpose of providing background to the disclosure, and none or all of the discussion is to be regarded as an admission that any of the discussion was known at the time the invention was made or that these constitute prior art. SUMMARY OF THE INVENTION MEANS FOR SOLVING THE PROBLEM

[0006] The summary of the invention is presented in a simplified form to introduce some concepts, which will be described in more detail later. This summary is not necessarily intended to identify the main or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0007] Various embodiments of the present disclosure relate to a transfer chamber including an apparatus for forming a protective gas curtain, as well as related semiconductor processing systems and methods.

[0008] According to an embodiment of the present disclosure, a transfer chamber is disclosed. The transfer chamber includes a housing having a first opening through which a substrate is transferred in and out of a first passage within the housing. In such an embodiment, the transfer chamber includes a first gate valve disposed on the front surface of the housing, and the first gate valve is set to an open position to allow the transfer of the substrate into the first passage through the first opening, or is set to a closed position to form a vacuum seal to cover the first opening. In such embodiments, one or more gas distributors are disposed on the housing in proximity to the first gate valve, and the one or more gas distributors are provided with a plurality of gas directing channels for directing an inert gas to cover the first opening of the housing and forming a gas curtain to cover the first opening.

[0009] In some embodiments, one or more gas distributors are disposed within the housing.

[0010] In some embodiments, one or more gas distributors are disposed on the outer surface of the housing.

[0011] In some embodiments, one or more gas distributors are disposed above and / or below the first opening, and the gas directing channels extend longitudinally to direct the inert gas across the width of the first opening.

[0012] In some embodiments, one or more gas distributors are disposed laterally of the first opening, and the gas directing channels extend laterally to direct the inert gas across the height of the first opening.

[0013] In some embodiments, the housing further comprises a second opening disposed laterally of the first opening and a second gate valve disposed on the front face of the housing, the second gate valve being set to an open position to allow the substrate to pass into a second passage through the second opening or set to a closed position to form a vacuum seal to cover the second opening.

[0014] In some embodiments, one or more gas distributors are disposed above and / or below the first opening and the second opening, and the gas directing channels extend vertically to direct the inert gas across the widths of the first opening and the second opening.

[0015] In some embodiments, the transport chamber further comprises a second gas distributor disposed above and / or below the second opening, the second gas distributor comprising a second gas directing channel that extends vertically to direct the inert gas across the width of the second opening.

[0016] In some embodiments, one or more gas distributors are disposed between the first opening and the second opening, the one or more gas distributors comprising a first laterally extending first lateral gas directing channel to direct the inert gas across the height of the first opening and a second laterally extending second lateral gas directing channel to direct the inert gas across the height of the second opening, the first lateral gas directing channel and the second lateral gas directing channel being constructed and arranged to direct the inert gas in opposite directions.

[0017] In some embodiments, the housing of the present transport chamber includes a third opening disposed below the first opening, and a third gate valve disposed on the front surface of the housing. The third gate valve is set to an open position to enable the conveyance of a substrate into a third passage through the third opening, or is set to a closed position to form a vacuum seal so as to cover the third opening. The third gate valve, a fourth opening disposed below the second opening and laterally of the third opening, and a fourth gate valve disposed on the front surface of the housing. The fourth gate valve is set to an open position to enable the passage of a substrate into a fourth passage through the fourth opening, or is set to a closed position to form a vacuum seal so as to cover the fourth opening. The present transport chamber further includes the fourth gate valve.

[0018] In some embodiments, one or more gas distributors are disposed laterally of the first opening and the third opening, and the gas directing channels extend laterally to direct an inert gas across the height of the first opening and the height of the third opening.

[0019] In some embodiments, the present transport chamber further includes a third gas distributor disposed laterally of the third opening. The third gas distributor includes a third gas directing channel that extends laterally to direct an inert gas across the height of the third opening.

[0020] In some embodiments, one or more gas distributors are disposed between the first opening and the third opening. The one or more gas distributors include a first longitudinal gas directing channel that extends longitudinally to direct an inert gas across the width of the first opening, and a second longitudinal gas directing channel that extends longitudinally to direct an inert gas across the width of the third opening. The first longitudinal gas directing channel and the second longitudinal gas directing channel are constructed and arranged to direct an inert gas in opposite directions, respectively.

[0021] In some embodiments, one or more gas distributors are disposed laterally of the first and third openings and / or laterally of the second and fourth openings.

[0022] In some embodiments, one or more additional gas distributors are disposed above the first and second openings and / or below the first and second openings and / or below the third and fourth openings.

[0023] In some examples, the transport chamber further includes a gas diffuser disposed within a first passage of the housing, the gas diffuser configured to disperse a second inert gas within the first passage of the housing.

[0024] According to an embodiment of the present disclosure, a semiconductor processing system is also disclosed, the semiconductor processing system including one or more embodiments of the transport chamber of the present disclosure. In such an embodiment, the semiconductor processing system includes a transport chamber and an equipment front end module (EFEM) connected to the front surface of the housing of the transport chamber, the equipment front end module housing a front end substrate transfer robot. In such an embodiment, the semiconductor processing system also includes a back-end transfer module (BETM) connected to the rear surface of the housing of the transport chamber, the back-end transfer module coupling a process module to the transport chamber, and a controller configured to form a gas curtain between the transport chamber and the equipment front end module by initiating a flow of inert gas into one or more gas distributors disposed on the front surface of the transport chamber prior to transporting a substrate into the transport chamber.

[0025] In some embodiments, the semiconductor processing system further comprises an additional back-end transfer module having one or more additional process modules, and an additional transfer chamber coupling the additional back-end transfer module to the equipment front-end module.

[0026] According to embodiments of the present disclosure, a method for preventing moisture from entering a transfer chamber is disclosed. According to embodiments of the present disclosure, the method includes flowing an inert gas into one or more gas distributors disposed on a housing of the transfer chamber. In such embodiments, the one or more gas distributors are disposed proximate to a first gate valve, and the one or more gas distributors include a plurality of gas directing channels for directing the inert gas to cover a first opening of the housing and form a gas curtain to cover the first opening. In such embodiments, the method also includes opening a first gate valve disposed on a front surface of the housing of the transfer chamber, transporting a substrate into a first passage within the transfer chamber, and placing the substrate on a substrate support disposed within the first passage. Also, in such embodiments, the method includes closing the first gate valve disposed on the front surface of the housing of the transfer chamber, and blocking the gas curtain by stopping the flow of the inert gas into the one or more gas distributors disposed on the housing of the transfer chamber. In some embodiments, the method further includes flowing a second inert gas into a gas diffuser disposed within the housing of the transfer chamber before opening the first gate valve.

[0027] In the present disclosure, for the purpose of summarizing the invention and advantages achieved beyond the prior art, certain objects and advantages of the invention have been described as above. It should be understood, of course, that not necessarily all such objects or advantages need to be achieved in accordance with any particular embodiment of the invention. Therefore, for example, one skilled in the art should recognize that the invention may be embodied or practiced in a manner that achieves or optimizes one advantage or group of advantages that may be taught or suggested in the present disclosure, without necessarily achieving other objects or advantages that may be taught or suggested in the present disclosure.

[0028] All of these embodiments are intended to be within the scope of the invention disclosed in the present disclosure. It is believed that these and other embodiments will be readily apparent to those skilled in the art from the following detailed description of certain embodiments, with reference to the accompanying drawings, but the invention is not limited to any particular embodiment disclosed.

[0029] To easily identify the description of any particular element or operation, the most significant digit of the reference numeral refers to the figure number in which the element is first introduced.

[0030] A more complete understanding of the embodiments of the present disclosure will be obtained by considering the detailed description and the claims in view of the following exemplary drawings.

Brief Description of the Drawings

[0031]

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DETAILED DESCRIPTION

[0032] It should be understood that the elements in the drawings are illustrated for simplicity and clarity and are not necessarily drawn to scale. For example, some of the dimensions of the elements in the drawings may be exaggerated relative to other elements to assist in understanding the illustrated embodiments of the present disclosure.

[0033] The following description of exemplary embodiments of the methods and configurations provided is merely exemplary and is intended for illustrative purposes only. The following description is not intended to limit the scope of the present disclosure or the claims. Further, while multiple embodiments having the described configurations or steps are described, this is not intended to exclude other embodiments having additional configurations or steps, or other embodiments incorporating different combinations of the described configurations or steps.

[0034] As used in the present disclosure, the term "transfer chamber" can refer to any chamber configuration configured for handling, transporting, and / or storing substrates before and / or after processing in a process module (such as a reactor and reaction chamber).

[0035] As used herein, the term "substrate" can refer to any one or more underlying materials that can be used to form, or on which devices, circuits, or films can be formed, by a method according to an embodiment of the present disclosure. The substrate can be a bulk material such as silicon (e.g., single-crystalline silicon), other Group IV materials such as germanium, or other semiconductor materials such as Group II-VI or Group III-V semiconductor materials, and can be a configuration including one or more layers on or under the bulk material. Further, the substrate can be a configuration having various shapes such as recesses, protrusions, and the like formed in or on at least a portion of a layer of the substrate. By way of example, the substrate can include a bulk semiconductor material and an insulating or dielectric material layer on at least a portion of the bulk semiconductor material. Further, the term "substrate" can refer to any underlying material that can be used, or on which devices, circuits, or films can be formed. The "substrate" can be continuous or discontinuous, rigid or flexible, solid or porous. The "substrate" can be in any form such as a powder, plate, or workpiece. Examples of substrates in the form of plates include wafers of various shapes and sizes. The substrate can be a configuration made of materials such as, for example, silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide. A continuous substrate can extend beyond the boundaries of the process chamber in which the deposition process occurs and can be moved through the process chamber such that the process continues until it reaches the end of the substrate. A continuous substrate can be supplied from a continuous substrate supply system that enables the manufacture and output of the continuous substrate in any suitable form. Non-limiting examples of continuous substrates can include sheets, non-woven membranes, rolls, foils, webs, flexible materials, bundles of continuous filaments or fibers (i.e., ceramic fibers or polymer fibers). Also, the continuous substrate can be a configuration that also has a carrier or sheet on which the discontinuous substrate is placed. By way of example, the substrate can be a configuration including a semiconductor material.The semiconductor material may include one or more of the source, drain, or channel regions of the device, or may be used to form these. The substrate may further include a interlayer dielectric (e.g., silicon oxide) and / or a high-k material layer that overlays the semiconductor material. In this context, a high-k material (or high-k dielectric material) is a material having a dielectric constant greater than that of silicon dioxide.

[0036] As used in this disclosure, the terms “film” and / or “layer” are interchangeable with each other and can mean any continuous or discontinuous structure and material, such as a material deposited by the methods disclosed in this disclosure. For example, a film and / or layer can include two-dimensional materials, three-dimensional materials, nanoparticles, partial or complete molecular layers, or partial or complete atomic layers, or clusters of atoms and / or molecules. A film or layer may be partially or completely composed of a plurality of atoms dispersed on the surface of a substrate, and / or may be embedded within the substrate, and / or may be embedded within a device fabricated on this substrate. A film or layer may include a material or layer having pinholes and / or isolated islands. A film or layer may be at least partially continuous. A film or layer may be patterned (e.g., subdivided) and may consist of a plurality of semiconductor devices.

[0037] It should be understood that in this specification, the terms "on" or "over" may be used to describe a relative positional relationship. Another element, film, or layer may be disposed directly on the layer being referred to, or another layer (intermediate layer) or element may intervene therebetween, or the layer may be disposed on the layer being referred to but may not completely cover the surface of the layer being referred to. Thus, unless the term "directly" is used separately, the terms "on" or "over" are to be construed as relative concepts. Similarly, it should be understood that the terms "under", "underlying", or "below" are to be construed as relative concepts.

[0038] Various embodiments of the present disclosure relate to a transfer chamber configured to reduce a moisture content, a semiconductor processing system employing such a transfer chamber, and related methods for reducing the moisture content in a semiconductor processing system. In some embodiments of the present disclosure, the transfer chamber includes one or more gas diffusers configured to form a protective gas curtain so as to cover a transfer chamber opening when transferring a substrate into the transfer chamber. In some embodiments of the present disclosure, the transfer chamber includes one or more gas diffusers configured to pressurize the transfer chamber so as to prevent moisture from entering the transfer chamber during a substrate transfer operation.

[0039] Referring now to the drawings, FIG. 1 shows a semiconductor processing system 100 of the present disclosure, including a transfer chamber 500 (e.g., a load lock chamber) equipped with an apparatus for reducing the moisture content within the exemplary transfer chamber 500. The semiconductor processing system 100 includes a process module 102, a back-end transfer module 104, and a transfer chamber 500 with a housing 202. The semiconductor processing system 100 also includes an equipment front-end module (EFEM) 110, a controller 112, and an exhaust / ventilation source 114. In the illustrated embodiment, the semiconductor processing system 100 uses, for example, deposition processes and / or etching processes such as atomic layer deposition (ALD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALEt) process, chemical vapor etch (CVE) process, plasma dry etching, etc. to deposit / etch a material layer onto / from a substrate 118, and includes a cluster-type platform 116 having four process modules configured to do so. This is for illustrative and explanatory purposes only and is non-limiting. As those skilled in the art will understand in view of the present disclosure, the present disclosure may also be beneficial to semiconductor processing systems configured for other material layer deposition / etching processes and semiconductor processing systems configured for other processing operations.

[0040] The process module 102 is connected to the back-end transfer module 104 by the process module gate valve 120. The process module 102 includes a process chamber 122, a heater 124, and a precursor source 126. The process chamber 122 is disposed within the process module 102, houses the heater 124, and is configured to flow a precursor or reactant over a substrate 118 that is placed on top of the heater 124 during deposition / etching of a material layer onto the substrate 118. The precursor / reactant source 126 is fluidly connected to the process chamber 122 and is configured to supply a precursor / reactant to the process chamber 122 for depositing / etching one or more material layers onto the substrate 118. The process module gate valve 120 connects the process module 102 to the back-end transfer module 104 and is configured to provide selective communication between the process chamber 122 and the back-end transfer module 104. In this regard, it is considered that the process module gate valve 120 can be configured to allow transfer of the substrate 118 between the back-end transfer module 104 and the process module 102 before and after deposition of a material layer onto the substrate 118.

[0041] According to an embodiment of the present disclosure, the process chamber 122 may be a first process chamber, and the process module 102 may include one or more second process chambers. For example, the process module 102 may be a dual-chamber module having two process chambers, or a quad-chamber module (not shown) having four process chambers. According to a particular embodiment, the process module gate valve 120 may be a first process module gate valve, and the process module 102 may also include a second process module gate valve that also connects the process module 102 to the back-end transfer module 104. In a particular embodiment, it is conceivable that the reactant may be configured to include a reactant or precursor suitable for deposition / etching of a material layer. Also, according to a particular embodiment, the process module 102 may be configured to include a plasma unit configured to provide the reactant as a suitable plasma to the substrate 118. In this regard, the process module 102 may be configured to deposit / etch a material layer on the substrate 118 using, for example, plasma-enhanced deposition / etching.

[0042] The back-end transfer module 104 is connected to the rear surface 206 of the housing 202 of the transfer chamber 500 and includes a back-end chamber body 128 and a back-end substrate transfer robot 130. The back-end chamber body 128 is arranged along the transfer axis 132. The back-end substrate transfer robot 130 can also be arranged in the passage of the back-end chamber body 128 so as to move relative to the back-end chamber body 128 for the transfer of substrates, such as substrate 118, between the transfer chamber 500 and the process module 102, and be configured to be supported within the back-end chamber body 128. In a particular embodiment, the back-end chamber body 128 may have a polygonal shape. In this regard, the back-end chamber body 128 may have five sides, fewer than five sides (e.g., rectangle or square), or more than five sides (e.g., hexagon), and may have a regular or irregular polygon shape.

[0043] The machine front-end module (EFEM) 110 is coupled to the front surface 204 of the housing 202 of the transfer chamber 500 and includes an enclosure 144, a front-end substrate transfer robot 146, and one or more load ports 148. The enclosure 144 houses the front-end substrate transfer robot 146. The front-end substrate transfer robot 146 is housed within the enclosure 144 such that it can move with respect to the enclosure 144 or transfer substrates, such as substrate 118, between one or more load ports 148 and the transfer chamber 500. One or more load ports 148 are connected to the enclosure 144 and are configured to receive pods 150 that house one or more substrates before and after deposition / etching of a material layer onto the substrates. In certain embodiments, the pod 150 may be configured to include a standard mechanical interface pod. According to certain embodiments, the pod 150 may be configured to include a front-opening unified pod. Although the present disclosure is illustrated and described as having three load ports, it should be understood and recognized that the machine front-end module 110 may include fewer or more load ports and that such configurations are also included within the scope of the present disclosure.

[0044] The controller 112 is operably connected to the semiconductor processing system 100 and includes a device interface 152, a processor 154, a user interface 156, and a memory 158. The device interface 152 couples the processor 154 to the semiconductor processing system 100, for example, via (or over) a wired or wireless link 160. The processor 154 is operably connected to the user interface 156 and is disposed in communication with the memory 158. The memory 158 includes a machine-readable non-transitory medium having a plurality of program modules 162 that are recorded on the memory 158 and contain instructions that, when read by the processor 154, cause the processor 154 to perform certain operations. Among the operations are operations for reducing moisture within the transfer chamber 500, as described below.

[0045] In some embodiments, the semiconductor processing system 100 may be configured to include a transfer chamber 500, and the transfer chamber 500 includes an apparatus for preventing moisture from entering the transfer chamber.

[0046] Figures 2, 3, and 4 show various views of an exemplary transfer chamber 200 before adding various components / devices configured to reduce the amount of moisture within the transfer chamber 200. More specifically, FIG. 2 shows a front view of the transfer chamber 200 having various gate valves set to an open position, FIG. 3 shows a front view of the transfer chamber 200 having various gate valves set to a closed position, and FIG. 4 shows a cutaway plan view of the transfer chamber 200.

[0047] According to an embodiment of the present disclosure, and with reference to FIGS. 2-4, the transfer chamber 200 includes a housing 202 having a front surface 204 and a rear surface 206.

[0048] According to an embodiment of the present disclosure, the housing 202 has a first opening 208 through which a substrate (not shown) is conveyed into the first passage 210. In such an embodiment, the first gate valve 212 is disposed on the front surface 204 of the housing 202, and the first gate valve 212 is set to an open position to enable controlled conveyance of the substrate into the first passage 210 through the first opening 208, or is set to a closed position to cover the first opening 208 and form a vacuum seal, either one.

[0049] According to other embodiments of the present disclosure, the housing 202 may be configured to have a second opening 214 through which a substrate (not shown) is conveyed into the second passage 216. In such an embodiment, the second opening 214 is disposed laterally of the first opening 208. In such an embodiment, the second gate valve 218 is disposed on the front surface 204 of the housing 202, and the second gate valve 218 is set to an open position to enable controlled conveyance of the substrate into the second passage 216 through the second opening 214, or is set to a closed position to cover the second opening 214 and form a vacuum seal, either one.

[0050] According to other embodiments of the present disclosure, the housing 202 may be configured to have a third opening 220 through which a substrate (not shown) is conveyed into the third passage 222. In such an embodiment, the third opening 220 is disposed below the first opening 208. In such an embodiment, the third gate valve 224 is disposed on the front surface 204 of the housing 202, and the third gate valve 224 is set to an open position to enable controlled conveyance of the substrate into the third passage 222 through the third opening 220, or is set to a closed position to cover the third opening 220 and form a vacuum seal, either one.

[0051] According to a further embodiment of the present disclosure, the housing 202 may be configured to have a fourth opening through which a substrate (not shown) is conveyed into the fourth passage 228. In such an embodiment, the fourth opening 226 is disposed below the second opening 214 and laterally of the third opening 220. In such an embodiment, the fourth gate valve 230 is disposed on the front face 204 of the housing 202, and the fourth gate valve 230 is set to an open position to allow controlled movement of the substrate into the fourth passage 228 through the fourth opening 226, or to a closed position to cover the fourth opening 226 and form a vacuum seal, either way.

[0052] According to an embodiment of the present disclosure, each of the passages (210, 216, 222, 228) within the transfer chamber 200 comprises at least one substrate support 232 (illustrated in FIG. 4). In such an embodiment, the substrate support 232 is constructed and arranged to hold a substrate within a passage of the transfer chamber. Further, the rear face 206 of the housing 202 comprises one or more rear gate valves 234, and each of the one or more passages of the transfer chamber 200 comprises a rear gate valve 234 that operates in the same manner as the gate valves (e.g., gate valves 212, 218, 224, 230) disposed on the front face 204 of the transfer chamber 200.

[0053] In some embodiments of the present disclosure, the transfer chamber is a single chamber transfer chamber and comprises a first opening 208 and a single passage (e.g., the first passage 210). In such an embodiment, the transfer chamber comprises a first gate valve 212, a substrate support 232, and a rear gate valve 234.

[0054] In some embodiments of the present disclosure, the transfer chamber is a dual-chamber type transfer chamber having a first opening 208 and a second opening 214, and the second opening 214 is disposed laterally of the first opening 208. In such an embodiment, the dual-chamber type transfer chamber has a first passage 210 (controlled by gate valves 212 and 234) and a second passage 216 (controlled by gate valves 218 and 234), and the substrate support 232 is provided in each of the first passage 210 and the second passage 216.

[0055] In some embodiments of the present disclosure, the transfer chamber is a dual-chamber type transfer chamber having a first opening 208 and a third opening 220, and the third opening 220 is disposed below the first opening 208. In such an embodiment, the dual-chamber type transfer chamber has a first passage 210 (controlled by gate valves 212 and 234) and a third passage 222 (controlled by gate valves 224 and 234), and the substrate support 232 is provided in each of the first passage 210 and the third passage 222.

[0056] In some embodiments of the present disclosure, the transfer chamber is a quad-chamber type transfer chamber. In such embodiments, the transfer chamber includes an upper dual chamber, the upper dual chamber has a first opening 208 and a second opening 214, and the second opening 214 is disposed laterally of the first opening 208. In such embodiments, the upper chamber has a first passage 210 (controlled by gate valves 212 and 234) and a second passage 216 (controlled by gate valves 218 and 234), and the substrate support 232 is provided in each of the first passage 210 and the second passage 216. In such embodiments, the transfer chamber also includes a lower dual chamber, the lower dual chamber includes a third opening 220 and a fourth opening 226, the third opening 220 is disposed below the first opening 208, and the fourth opening is disposed laterally of the third opening 220 and below the second opening 214. In such embodiments, the lower dual chamber has a third passage 222 (controlled by gate valves 224 and 234) and a fourth passage 228 (controlled by gate valves 230 and 234), and the substrate support 232 is provided in each of the third passage 222 and the fourth passage 228.

[0057] FIGS. 5 and 6 show diagrams of a transfer chamber 500 according to one or more embodiments of the present disclosure. FIG. 5 shows a front view of the transfer chamber 500 with the first gate valve 212 in the open position, and FIG. 6 shows a plan view of the transfer chamber 500.

[0058] According to an embodiment of the present disclosure, the transfer chamber 500 includes a housing 202, a front surface 204, a rear surface 206, a first opening 208, a first gate valve 212, a rear gate valve 234, and a first passage 210 including at least one substrate support 232 as described above.

[0059] According to an embodiment of the present disclosure, the transfer chamber 500 includes one or more gas distributors (502a, 502b, 502c) disposed in the housing 202 proximate to the first gate valve 212. In some embodiments, the one or more gas distributors are disposed within the first passage 210 (shown as a dashed line for gas distributor 502c in FIG. 6). In some embodiments, the one or more gas distributors are disposed on the outer surface of the housing (exemplified in the drawings as gas distributors 502a and 502b). In such embodiments, the gas distributors may be disposed on the front surface 204 of the housing 202 as exemplified by gas distributors 502a and 502b in FIGS. 5 and 6.

[0060] According to an embodiment of the present disclosure, one or more gas distributors (502a, 502b, 502c) may be configured to include a flow prevention mechanism (also shown as 502a in FIG. 5) such as a baffle or brim structure to prevent backflow into the transfer chamber 500. The flow prevention mechanism may be fixed to the rear wall of the transfer chamber 500 at a position above the first gate valve 212 and / or the second gate valve 218. The flow prevention mechanism may project from the rear wall of the transfer chamber 500 and may operate to create a local region of high-pressure recirculation that impedes fluid communication from the interior of the transfer chamber 500 through either (or both) of the first gate valve 212 and the second gate valve 218. Advantageously, this can suppress moisture from entering the load lock during wafer transfer through either (or both) of the first gate valve 212 and the second gate valve 218 and can suppress contamination that can occur with the moisture. As a further advantage, the flow prevention mechanism may reduce the amount of nitrogen required to otherwise maintain a barrier between the EFEM 110 and the transfer chamber 500.

[0061] According to an embodiment of the present disclosure, one or more gas distributors (502a, 502b, 502c) may be configured to have a plurality of gas directing channels 504a, 504b. The gas directing channels 504a, 504b are illustrated as dashed channels in FIG. 5 such that the gas directing channels are internal channels within the gas distributor (see gas distributors 502a, 502b). In other embodiments, the gas distributor has a single gas directing channel. In other embodiments, the gas directing channels have openings provided in the surfaces of the gas distributors 502a, 502b. In other embodiments, the gas distributor has one or more gas directing channels. According to an embodiment of the present disclosure, the gas directing channels 504a and the gas directing channels 504b are constructed and arranged to direct an inert gas (shown as inert gas flows 506a and 506b) to cover the first opening 208 of the housing 202 and form a gas curtain covering the first opening 208.

[0062] According to an embodiment of the present disclosure, the gas distributor is disposed above and / or below the first opening of the housing. In such an embodiment, the plurality of gas directing channels in one or more gas distributors extend longitudinally to direct the inert gas across the width of the first opening. In some embodiments, the transport chamber 500 includes a gas distributor 502a disposed above the first opening 208, and the gas directing channels 504a in the gas distributor 502a extend longitudinally to direct the inert gas downward (shown as the active gas flow 506a) across the width of the first opening (the width of the first opening is indicated by the arrow 508). In such an embodiment, the gas distributor 502a may be configured to include a plurality of gas directing channels 504a that are constructed and arranged to direct the inert gas across the entire width (508) of the first opening 208. In some embodiments, the transport chamber 500 includes a gas distributor 502b disposed below the first opening 208, and the gas directing channels 504b in the gas distributor 502b extend longitudinally to direct the inert gas upward (shown by the inert gas flow 506b) across the width (508) of the first opening. In such an embodiment, the gas distributor 502b may be configured to include a plurality of gas directing channels 504b that are constructed and arranged to direct the inert gas across the entire width (508) of the first opening 208.

[0063] In some embodiments, the transport chamber 500 includes both a gas distributor 502a disposed above the first opening 208 and a gas distributor 502b disposed below the first opening 208. In some embodiments, the transport chamber 500 includes a gas distributor 502a (as described above) disposed above the first opening 208, a gas distributor 502b (as described above) disposed below the first opening 208, and an internal gas distributor 502c. In some embodiments, the transport chamber 500 includes at least one of the gas distributors 502a, 502b, 502c).

[0064] Figures 7 and 8 show diagrams of a transfer chamber 700 according to one or more other embodiments of the present disclosure. FIG. 7 shows a front view of the transfer chamber 700 with the first gate valve 212 in the open position, and FIG. 8 shows a plan view of the transfer chamber 700.

[0065] According to an embodiment of the present disclosure, the transfer chamber 700 of FIGS. 7 and 8 is the same as or similar to that described with reference to FIGS. 5 and 6, except for the configuration of the gas distributor. Therefore, the following description only describes the additional configuration of the gas distributor.

[0066] According to an embodiment of the present disclosure, the transfer chamber 700 includes one or more gas distributors (702a, 702b, 702c) disposed on the housing 202 proximate to the first gate valve 212. In some embodiments, the one or more gas distributors are disposed within the first passage 210 of the housing 202 (shown as a dashed line for gas distributor 702c in FIG. 8). In some embodiments, the one or more gas distributors are disposed on the outer surface of the housing, as illustrated by gas distributors 702a and 702b. In such embodiments, the gas distributors (702a, 702b) may be disposed on the front face 204 of the housing 202, as shown in FIGS. 7 and 8.

[0067] According to an embodiment of the present disclosure, the one or more gas distributors of the transfer chamber 700 include a plurality of gas directing channels 704a, 704b, as described above with reference to the gas directing channels 504a, 504b. According to an embodiment of the present disclosure, the gas directing channels 704a, 704b are constructed and arranged to direct an inert gas stream (shown as inert gas stream lines 706a and 706b) to cover the first opening 208 of the housing 202 and form a gas curtain to cover the first opening 208.

[0068] According to an embodiment of the present disclosure, one or more gas distributors of the transfer chamber 700 are disposed laterally to the first opening, and the gas directing channels extend laterally to direct the inert gas across the height of the first opening. In such an embodiment, the plurality of gas directing channels in one or more gas distributors extend laterally to direct the inert gas across the height of the first opening.

[0069] In some embodiments, the transfer chamber 700 includes a gas distributor 702a disposed on the left side of the first opening 208, and the gas directing channels 704a in the gas distributor 702a extend laterally to direct the inert gas toward the first opening 208 (shown as the inert gas flow line 706a). In such an embodiment, the lateral gas directing channels direct the inert gas across the height of the first opening (arrow 708 indicates the height of the first opening 208). In such an embodiment, the gas distributor 702a may be configured to include a plurality of gas directing channels 704a that are constructed and arranged to direct the inert gas across the entire height (708) of the first opening 208.

[0070] In some embodiments, the transfer chamber 700 includes a gas distributor 702b disposed on the right side of the first opening 208, and the gas directing channels 704b in the gas distributor 702b extend laterally to direct the inert gas toward the first opening 208 (shown as the inert gas flow line 706b). In such an embodiment, the lateral gas directing channels direct the inert gas across the height (708) of the first opening. In such an embodiment, the gas distributor 702b may be configured to include a plurality of gas directing channels 704b that are constructed and arranged to direct the inert gas across the entire height (708) of the first opening 208.

[0071] In some embodiments, the transport chamber 700 is disposed on either the left and / or right of the first opening 208 and includes a gas distributor 702c disposed within the first passage 210. In such embodiments, the gas distributor 702c includes the lateral gas direction channels described above. In such embodiments, the gas distributor 702c is the same as or similar to the gas distributors 702a and 702b.

[0072] In some embodiments, the transport chamber 700 includes both a gas distributor 702a disposed on the left side of the first opening 208 and a gas distributor 702b disposed on the right side of the first opening 208. In some examples, the transport chamber 700 includes both gas distributors 702a and 702b, as well as one or more internal gas distributors 702c. In some examples, the transport chamber 700 includes at least one of the gas distributors 702a, 702b, 702c.

[0073] FIGS. 9 and 10 show diagrams of a transport chamber 900 according to one or more other embodiments of the present disclosure. FIG. 9 shows a front view of the transport chamber 900 having the first gate valve 212 and the second gate valve 218 in the open position, and FIG. 9 shows a cutaway plan view of the transport chamber 900.

[0074] According to an embodiment of the present disclosure, the transport chamber 900 includes a dual-chamber type transport chamber as described above. In such an embodiment, the transport chamber 900 includes a housing 202, a front surface 204, a rear surface 206, a first opening 208, a second opening 214, a first gate valve 212, a second gate valve 218, a rear gate valve 234, a first passage 210, and a second passage 216 (each including at least one substrate support (shown here) as described above).

[0075] According to an embodiment of the present disclosure, and referring to FIG. 9, the transfer chamber 900 includes one or more gas distributors (902a, 902b, gas distributor 902c) disposed on the housing 202 proximate to the first gate valve 212 and proximate to the second gate valve 218. In some embodiments, the gas distributors of the transfer chamber 900 are disposed within the first passage 210 and the second passage 216 (illustrated as dashed lines of the gas distributor 902c in FIG. 10). In some examples, the gas distributors are disposed on the outer surface of the housing (illustrated as the gas distributor 902a and the gas distributor 902b). In such an embodiment, the gas distributors may be disposed on the front surface 204 of the housing 202 as shown in FIG. 9 for the gas distributors 902a and 902b.

[0076] According to an embodiment of the present disclosure, the gas distributors (902a, 902b, gas distributor 902c) include a plurality of gas directing channels 904a, 904b as described above. According to an embodiment of the present disclosure, the gas directing channels 904a, 904b are configured and arranged to direct an inert gas (shown as the inert gate flows 906a, 906b) to cover both the first opening 208 and the second opening 214 of the housing 202 and to form a gas curtain to cover both the first opening 208 and the second opening 214.

[0077] According to an embodiment of the present disclosure, the gas distributor is disposed above and / or below the first opening and the second opening of the housing. In such an embodiment, the gas directing channels in one or more gas distributors extend longitudinally to direct the inert gas across the width of the first opening and across the width of the second opening. In some embodiments, the transport chamber 900 includes a gas distributor 902a disposed above the first opening 208 and the second opening 214, and the gas directing channel 904a in the gas distributor 902a directs the inert gas downward (shown as the inert gas flow line 906a) within the gas distributor 902a across the width of the first opening (508) and across the width of the second opening (arrow 908 indicates the width of the second opening) and extends longitudinally for this purpose. In such an embodiment, the gas distributor 902a may be configured to include a plurality of gas directing channels 904a that are constructed and arranged to direct the inert gas across the entirety of both the width (508) of the first opening 208 and the width (908) of the second opening 214. In some embodiments, the transport chamber 900 includes a gas distributor 902b disposed below the first opening 208 and the second opening 214, and the gas directing channel 904b in the gas distributor 902b directs the inert gas upward (shown as the inert gas flow line 906b) across the width of the first opening (508) and across the width of the second opening (908) and extends longitudinally for this purpose. In such an embodiment, the gas distributor 902b may be configured to include a plurality of gas directing channels 904b that are constructed and arranged to direct the inert gas across the entirety of both the width (508) of the first opening 208 and the width (908) of the second opening 214.

[0078] In some embodiments, the transfer chamber 900 includes a gas distributor 902a disposed above the first opening 208 and the second opening 214, and a gas distributor 902b disposed below the first opening 208 and the second opening 214. In some examples, the transfer chamber 900 includes gas distributors 902a and 902b, and an internal gas distributor 902c, and the gas distributor 902c may be configured to be disposed above and / or below the first opening and the second opening. In some examples, the transfer chamber 900 includes at least one of the gas distributors 902a, 902b, 902c.

[0079] FIGS. 11 and 12 show diagrams of a transfer chamber 1100 according to one or more additional embodiments of the present disclosure. FIG. 11 shows a front view of the transfer chamber 1100 having a first gate valve 212 and a second gate valve 218 in an open position, and FIG. 9 shows a cutaway plan view of the transfer chamber 1100.

[0080] According to an embodiment of the present disclosure, the transfer chamber 1100 includes a dual-chamber type transfer chamber as described above. In such an embodiment, the transfer chamber 1100 includes a housing 202, a front surface 204, a rear surface 206, a first opening 208, a second opening 214, a first gate valve 212, a second gate valve 218, a rear gate valve 234, a first passage 210, and a second passage 216 (each including at least one substrate support (shown here) as described above).

[0081] The configuration of the transfer chamber 1100 is similar to that of the transfer chamber 900, but is different in that a single gas distributor (e.g., gas distributor 902a or 902b) of the transfer chamber 900 is divided into two, e.g., a first gas distributor and a second gas distributor. In such an embodiment, the first gas distributor is disposed above and / or below the first opening, and the second gas distributor is disposed above and / or below the second opening.

[0082] More specifically, referring to FIGS. 11 and 12, the transfer chamber 1100 includes a first gas distributor 1102a disposed above and / or below the first opening 208, and a second gas distributor 1102b disposed above and / or below the second opening 214. The gas distributors 1102a and 1102b may be disposed on the front surface 204 of the housing 202 and / or may be disposed within the first passage 210 and the second passage 216 (shown as a dashed line of the gas distributor 1102c in FIG. 12). In some embodiments, the transfer chamber 1100 includes the gas distributors 1102a and 1102b, as well as one or more internal gas distributors 1102c, and the gas distributors 1102a, 1102b, 1102c may be configured to be disposed above and / or below the first opening and the second opening. In some embodiments, the transfer chamber 1100 includes the gas distributors 1102a and 1102b, or one or more internal gas distributors 1102c. Further, the gas distributors 1102a, 1102b, and 1102c include a plurality of vertically extending gas directing channels (e.g., channels 1104a, 1104b, and 1104c) for directing an inert gas flow (e.g., flows 1106a, 1106b) to cover both the first opening 208 and the second opening 214 as described above.

[0083] FIGS. 13 and 14 show diagrams of a transfer chamber 1300 according to one or more other embodiments of the present disclosure. FIG. 13 shows a front view of the transfer chamber 1300 having the first gate valve 212 and the second gate valve 218 in the open position, and FIG. 9 shows a cutaway plan view of the transfer chamber 1300.

[0084] According to an embodiment of the present disclosure, the transfer chamber 1300 includes a dual-chamber type transfer chamber as described above. The transfer chamber 1300 of FIGS. 13 and 14 is the same or similar to that described with reference to FIGS. 9 and 10, except for the configuration of one or more gas distributors. Therefore, the following description will only describe the additional configuration of one or more gas distributors.

[0085] According to an embodiment of the present disclosure, the transfer chamber 1300 includes one or more gas distributors disposed laterally of the first opening and laterally of the second opening. In such an embodiment, the gas directing channels (within the gas distributor) extend laterally across the height of the first opening and across the height of the second opening to direct inertness. In such an embodiment, the plurality of gas directing channels within one or more gas distributors extend laterally to direct an inert gas across the height of the first opening and across the height of the second opening.

[0086] In some embodiments, referring to FIG. 13, the transfer chamber 1300 includes a gas distributor 1302a disposed on the left side of the first opening 208, and the gas directing channel 1304a within the gas distributor 1302a extends laterally to direct an inert gas toward the first opening 208 (shown as the inert gas flow line 1306a), as described above with reference to FIG. 7. In such an embodiment, the gas distributor 1302a directs an inert gas across the height of the first opening 208 (arrow 708 indicates the height of the first opening).

[0087] In some examples, the transfer chamber 1300 of FIG. 13 includes a gas distributor 1302b disposed to the right of the second opening 214, and the gas directing channel 1304b within the gas distributor 1302b extends laterally to direct an inert gas toward the second opening 214 (shown as the inert gas flow line 1306b). In such an embodiment, the gas distributor 1302b directs an inert gas across the height of the second opening 214 (arrow 1308 indicates the height of the second opening).

[0088] In some embodiments, the transfer chamber 1300 of FIG. 13 includes both a gas distributor 1302a (as described above) disposed on the left side of the first opening 208 and a gas distributor 1302b (as described above) disposed on the right side of the second opening 214.

[0089] Also, according to a further embodiment of the present disclosure, the transport chamber 1300 may be configured to include a gas distributor disposed between the first opening and the second opening. In such an embodiment, the gas distributor may be configured to include a first lateral response gas directing channel and a second lateral gas directing channel. The first lateral gas directing channel extends laterally to direct the inert gas across the height of the first opening, and the second lateral gas directing channel extends laterally to direct the inert gas across the height of the second opening. In such an embodiment, the first lateral gas directing channel and the second lateral gas directing channel are constructed and arranged to direct the inert gas in opposite directions. According to such an embodiment, FIG. 13 illustrates a gas distributor 1302c disposed between the first opening 208 and the second opening 214. In such an embodiment, the gas distributor 1302c includes a first lateral gas directing channel 1310 that extends laterally to direct the inert gas across the height (708) of the first opening 208. In such an embodiment, the gas distributor 1302c includes a second lateral gas directing channel 1312 that extends laterally to direct the inert gas across the height (1308) of the second opening 214. In such an embodiment, the first lateral gas directing channel 1310 and the second lateral gas directing channel 1312 are constructed and arranged to direct the inert gas in opposite directions. In some embodiments, the gas distributor 1302c includes a single gas distributor that includes both the first lateral gas directing channel and the second lateral gas directing channel. In some embodiments, the gas distributor 1302c includes two gas distributors: a first gas distributor (1302c) that includes the first lateral gas directing channel 1310 and a second gas distributor (1302c) that includes the second lateral gas directing channel 1312.

[0090] In some embodiments, the transfer chamber 1300 of FIG. 13 includes a gas distributor 1302a (as described above) disposed on the left side of the first opening 208, a gas distributor 1302b (as described above) disposed on the right side of the second opening 214, and a gas distributor 1302c (as described above) disposed between the first opening 208 and the second opening 214. The gas distributors 1302a, 1302b, and 1302c may be disposed on the front surface 204 of the housing 202 and / or within the first passage 210 and the second passage 216 (shown as dashed lines for the gas distributor 1302d in FIG. 14). In some examples, the transfer chamber 1300 includes at least one of the gas distributors 1302a, 1302b, 1302c, and 1302d.

[0091] FIGS. 15 and 16 show diagrams of a transfer chamber 1500 according to one or more additional embodiments of the present disclosure. FIG. 15 shows a front view of the transfer chamber 1500 having the first gate valve 212 and the third gate valve 224 in the open position, and FIG. 16 shows a cutaway plan view of the transfer chamber 1500. Note that the transfer chamber 1500 includes two openings, two passages, etc. Hereinafter, the lower opening is referred to as the third opening, and the lower passage is referred to as the third passage, to distinguish it from the previous dual-chamber example described above. Also, the cutaway plan view of the transfer chamber in FIG. 16 shows only the upper chamber, but it should be understood that the lower chamber configuration is the same as or similar to that shown in FIG. 16.

[0092] According to an embodiment of the present disclosure, the transfer chamber 1500 includes an upper chamber including a first opening 208 and a lower chamber including a third opening 220, and is a dual-chamber type transfer chamber. The third opening 220 is disposed below the first opening 208. In such an embodiment, the transfer chamber 1500 includes a housing 202, a front surface 204, a rear surface 206, a first opening 208, a third opening 220, a first gate valve 212, a third gate valve 224, a rear gate valve 234, a first passage 210, and a third passage 222 (each including at least one substrate support (shown here) as described above).

[0093] According to an embodiment of the present disclosure, the transfer chamber 1500 includes one or more gas distributors (1502a, 1502b, 1502c) disposed on the housing 202 proximate to the first gate valve 212 and the third gate valve 224. In some embodiments, the gas distributor is disposed within the first passage 210 and the third passage 222 of the housing 202 (shown as a dashed line for gas distributor 1502c in FIG. 16). In some embodiments, the gas distributor is disposed on the outer surface of the housing as exemplified by gas distributor 1502a and gas distributor 1502b. In such an embodiment, the gas distributors (1502a, 1502b) may be configured to be disposed on the front surface 204 of the housing 202 as shown in FIGS. 15 and 16.

[0094] According to an embodiment of the present disclosure, the gas distributor of the transfer chamber 1500 includes a plurality of gas-directing channels 1504a and 1504b as described above. According to an embodiment of the present disclosure, the gas-directing channels 1504a and 1504b are constructed and arranged to direct an inert gas flow (shown as inert gas flow lines 1506a and 1506b) to cover the first opening 208 and the third opening 220 of the housing 202 and form a gas curtain covering both the first opening 208 and the third opening 220.

[0095] According to an embodiment of the present disclosure, the gas distributor of the transfer chamber 1500 is disposed laterally of the first opening and the third opening, and the gas directing channels extend laterally across the height of the first opening and across the height of the third opening to direct the inertness. In such an embodiment, the plurality of gas directing channels in one or more gas distributors extend laterally to direct the inert gas across the height of the first opening and the third opening.

[0096] In some embodiments, the transfer chamber 1500 includes a gas distributor 1502a disposed to the left of the first opening 208 and the third opening 220, and the gas directing channels 1504a in the gas distributor 1502a extend laterally to direct the inert gas toward the first opening 208 and the third opening 220 (shown as the inert gas flow line 1506a). In such an embodiment, the lateral gas directing channels direct the inert gas across the height of the first opening 208 (arrow 708 indicates the height of the first opening) and across the height of the third opening 220 (arrow 1508 indicates the height of the third opening). In such an embodiment, the gas distributor 1502a may be configured with a plurality of gas directing channels 1504a that are constructed and arranged to direct the inert gas across the entire height (708) of the first opening 208 and across the entire height (1508) of the third opening 220.

[0097] In some embodiments, the transfer chamber 1500 includes a gas distributor 1502b disposed to the right of the first opening 208 and the third opening 220, and the gas directing channels 1504b within the gas distributor 1502b extend laterally (shown as the inert gas flow line 1506b) to direct the inert gas toward the first opening 208 and the third opening 220. In such embodiments, the lateral gas directing channels direct the inert gas across the height (708) of the first opening and across the height (1508) of the third opening. In such a configuration, the gas distributor 1502b may include a plurality of gas directing channels 1504b constructed and arranged to direct the inert gas across the entire height (708) of the first opening 208 and across the entire height (1508) of the third opening 220.

[0098] In some embodiments, the transfer chamber 1500 includes a number of gas distributors 1502c disposed within the first passage 210 and the third passage 222 and either to the left and / or right of the first opening 208 and the third opening 220. In such embodiments, the gas distributors 1502c include the lateral gas directing channels described above. In such embodiments, the gas distributors 1502c are the same as or similar to the gas distributors 1502a and 1502b.

[0099] In some embodiments, the transfer chamber 1500 includes both a gas distributor 1502a located to the left of the first opening 208 and the third opening 220 and a gas distributor 1502b located to the right of the first opening 208 and the third opening 220. In some examples, the transfer chamber 1500 includes both the gas distributors 1502a and 1502b, as well as one or more internal gas distributors 1502c. In some examples, the transfer chamber 1500 includes at least one of the gas distributors 1502a, 1502b, and 1502c.

[0100] Figures 17 and 18 show diagrams of a transfer chamber 1700 according to one or more other embodiments of the present disclosure. FIG. 17 shows a front view of the transfer chamber 1700 in which the first gate valve 212 and the third gate valve 224 are in the open position, and FIG. 16 shows a cutaway plan view of the transfer chamber 1700. The configuration of the transfer chamber 1700 is similar to that of the transfer chamber 1500 (FIGS. 15-16), but there is a difference in that a single gas distributor of the transfer chamber 1500 (e.g., gas distributor 1502a or 1502b) is divided into two, for example, a first gas distributor and a second gas distributor. In such an embodiment, the first gas distributor is disposed to the left of the first opening, and the third opening and the second gas distributor are disposed to the right of the first opening and the third opening.

[0101] More specifically, referring to FIGS. 17 and 18, the transfer chamber 1700 includes a first gas distributor 1702a located to the left of the first opening 208 and the third opening 220, and a second gas distributor 1702b located to the right of the first opening 208 and the third opening 220. The first gas distributor 1702a includes a gas directing channel 1704a therein, and the gas directing channel 1704a extends laterally to direct an inert gas toward the first opening 208 and the third opening 220 (shown as an inert gas flow line 1706a). In such an embodiment, the first gas distributor 1702a directs the inert gas across the height (708) of the first opening 208 and across the height (1708) of the third opening 220. The second gas distributor 1702b includes a gas directing channel 1704b therein, and the gas directing channel 1704b extends laterally to direct an inert gas toward the first opening 208 and the third opening 220 (shown as an inert gas flow line 1706b). In such an embodiment, the second gas distributor 1702b directs the inert gas across the height (708) of the first opening 208 and across the height (1708) of the third opening 220.

[0102] In some embodiments, the transfer chamber 1700 includes both a first gas distributor 1702a and a second gas distributor 1702b, as well as one or more internal gas distributors 1702c. In some embodiments, the transfer chamber 1700 includes at least one of the gas distributors 1702a, 1702b, 1702c.

[0103] FIGS. 19 and 20 show diagrams of a transfer chamber 1900 according to one or more other embodiments of the present disclosure. FIG. 19 shows a front view of the transfer chamber 1900 having a first gate valve 212 and a third gate valve 224 in an open position, and FIG. 20 shows a cutaway plan view of the transfer chamber 1900. The configuration of the transfer chamber 1900 is similar to the configuration of the transfer chamber 1500 (FIGS. 15-16), except that one or more gas distributors are laterally disposed above and / or below the first opening and the third housing.

[0104] According to an embodiment of the present disclosure, the transfer chamber 1900 includes a dual-chamber type transfer chamber as described above. The transfer chamber 1900 of FIGS. 19 and 20 is the same as or similar to that described with reference to FIGS. 15 and 17, except for the configuration of one or more gas distributors. Accordingly, the following description only describes the additional configuration of one or more gas distributors.

[0105] According to an embodiment of the present disclosure, the transfer chamber 1900 includes one or more gas distributors disposed above and / or below the first opening and the third opening. In such an embodiment, the gas directing channels (within the gas distributor) extend longitudinally across the width of the first opening and across the width of the third opening to direct inertness.

[0106] In some embodiments, referring to FIGS. 19 and 20, the transport chamber 1900 includes a gas distributor 1902a disposed above the first opening 208, and the gas directing channels 1904a in the gas distributor 1902a extend vertically (shown as the inert gas flow line 1906a) to direct the inert gas downward toward the first opening 208. In such an embodiment, the gas distributor 1902a directs the inert gas across the width (708) of the first opening 208.

[0107] In some embodiments, the transport chamber 1900 of FIGS. 19 and 20 includes a gas distributor 1902b disposed below the third opening 220, and the gas directing channels 1904b in the gas distributor 1902b extend vertically (shown as the inert gas flow line 1906b) to direct the inert gas upward toward the third opening 220. In such an embodiment, the gas distributor 1902b directs the inert gas across the width (1908) of the third opening 220.

[0108] In some embodiments, the transport chamber 1900 of FIGS. 19 and 20 includes both a gas distributor 1902a (as described above) disposed above the first opening 208 and a gas distributor 1902b (as described above) disposed below the third opening 220.

[0109] According to a further embodiment of the present disclosure, the transfer chamber 1900 may also be configured to include a gas distributor disposed between the first opening and the third opening. In such an embodiment, the gas distributor may be configured to include a first longitudinal gas directing channel and a second longitudinal gas directing channel. The first longitudinal gas directing channel extends longitudinally to direct the inert gas across the width of the first opening, and the second longitudinal gas directing channel extends longitudinally to direct the inert gas across the width of the third opening 220. In such an embodiment, the first longitudinal gas directing channel and the second longitudinal gas directing channel are constructed and arranged to direct the inert gas in opposite directions. In such an embodiment, FIG. 19 illustrates a gas distributor 1902c disposed between the first opening 208 and the third opening 220. In such an embodiment, the gas distributor 1902c includes a first longitudinal gas directing channel 1910 including a gas directing channel 1904c that extends longitudinally to direct the inert gas upward across the width (508) of the first opening 208. In such an embodiment, the gas distributor 1302c includes a second longitudinal gas directing channel 1912 that extends longitudinally to direct the inert gas downward across the width (1908) of the third opening 220. In such an embodiment, the first longitudinal gas directing channel 1910 and the second longitudinal gas directing channel 1912 are constructed and arranged to direct the inert gas in opposite directions (i.e., up and down). In some embodiments, the gas distributor 1902c includes a single gas distributor that includes both the first longitudinal gas directing channel and the second longitudinal gas directing channel. In some embodiments, the gas distributor 1902c includes two gas distributors: a first gas distributor (1902c) that includes the first longitudinal gas directing channel 1910 and a second gas distributor (1902c) that includes the second longitudinal gas directing channel 1912.

[0110] In some embodiments, the transfer chamber 1900 of FIGS. 19 and 20 includes a gas distributor 1902a (as described above) disposed above the first opening 208, a gas distributor 1902b (as described above) disposed below the third opening 220, and a gas distributor 1902c (as described above) disposed between the first opening 208 and the third opening 220. The gas distributors 1902a, 1902b, and 1902c may be disposed on the front surface 204 of the housing 202 and / or within the first passage 210 and the third passage 222 (shown as a dashed line of the gas distributor 1902d in FIG. 20). In some embodiments, the transfer chamber 1900 includes at least one of the gas distributors 1902a, 1902b, 1902c, and 1902d.

[0111] According to an embodiment of the present disclosure, the transfer chamber may be configured to include a quad-chamber type transfer chamber. In such an embodiment, the transfer chamber includes an upper dual chamber having a first opening and a second opening, and the second opening is disposed laterally of the first opening. In such an embodiment, the upper chamber has a first passage and a second passage. In such an embodiment, the transfer chamber also includes a lower dual chamber having a third opening and a fourth opening, the third opening is disposed below the first opening, and the fourth opening is disposed laterally of the third opening and below the second opening. In such an embodiment, the lower dual chamber has a third passage and a fourth passage. In such an embodiment, various configurations (and combinations thereof) of the gas distributors described above can be used to prevent moisture from entering the first passage, the second passage, the third passage, and the fourth passage of the quad-chamber type transfer chamber. The following description provides some non-limiting examples of configurations that can be used in a quad-chamber type transfer chamber, but it is clear that additional configurations are within the scope of the present disclosure.

[0112] FIG. 21 shows a front view of a transfer chamber 2100 including a housing 202 having a front surface 204, a first opening 208 and a second opening 214 (both constituting an upper transfer chamber), and a third opening 220 and a fourth opening 226 (both constituting a lower transfer chamber). Each opening (208, 214, 220, and 226) of the transfer chamber 2100 has an associated gate valve, passage, substrate support, and rear gate valve as described above. According to an embodiment of the present disclosure, the transfer chamber 2100 includes gas distributors 2102a, 2102b, 2102c, 2102d, 2102e, and 2102f.

[0113] In some embodiments, gas distributors 2102a and 2102b are disposed on the left sides of the first opening 208 and the third opening 220, respectively, and include gas directing channels 2104a and 2104b for directing an inert gas across the first opening 208 and the third opening 220. In some embodiments, as illustrated and described in FIG. 15, gas distributors 2102a and 2102b can be replaced with a single gas distributor extending across both the first opening 208 and the third opening 220.

[0114] In some embodiments, gas distributors 2102e and 2102f are disposed on the right sides of the second opening 214 and the fourth opening 226, respectively, and include gas directing channels 2104e and 2104f for directing an inert gas across the second opening 214 and the fourth opening 226. In some embodiments, gas distributors 2102e and 2102f can be replaced with a single gas distributor extending across both the second opening 214 and the fourth opening 226 as described above.

[0115] In some embodiments, the gas distributor 2102c is disposed between the first opening 208 and the second opening 214, and the gas distributor 2102d is disposed between the third opening 220 and the fourth opening 226. In such embodiments, the gas distributors 2102c and 2102d comprise gas directing channels for directing the inert gas across the first opening 208, the second opening 214, the third opening 220, and the fourth opening 226. In some embodiments, both the gas distributors 2102c and 2102d are identical to the gas distributor 1302c of FIG. 13 and may be configured to comprise both the first lateral gas directing channel and the second lateral gas directing channel as described above.

[0116] In some examples, the transport chamber 2100 may be configured to comprise internal equivalents of the gas distributors 2102a, 2102b, 2102c, 2102d, 2102e, and 2102f as described above. In some embodiments, the transport chamber 2100 comprises at least the gas distributors 2102a and 2102b. In some embodiments, the transport chamber 2100 comprises at least the gas distributors 2102e and 2102f. In some embodiments, the transport chamber 2100 comprises at least the gas distributors 2102c and 2102d.

[0117] FIG. 22 shows a further example of a transport chamber configuration for a quad-chamber type transport chamber as described above. According to an example of the present disclosure, the transport chamber 2200 comprises gas distributors 2202a, 2202b, 2202c, 2202d, 2202e, and 2202f.

[0118] In some embodiments, gas distributors 2202a and 2202b are each disposed above a first opening 208 and a second opening 214, and include gas directing channels 2204a and 2204b for directing an inert gas across the first opening 208 and the second opening 214. In some embodiments, as illustrated and described in FIG. 9, gas distributors 2202a and gas distributor 2202b can be replaced with a single gas distributor across both the first opening 208 and the second opening 214.

[0119] In some embodiments, gas distributors 2202e and 2202f are each disposed below a third opening 220 and a fourth opening 226, and include gas directing channels 2204e and 2204f for directing an inert gas flow 2206 across the third opening 220 and the fourth opening 226. In some embodiments, as illustrated and described in FIG. 9, gas distributors 2202e and gas distributor 2202f can be replaced with a single gas distributor across both the third opening 220 and the fourth opening 226.

[0120] In some embodiments, gas distributor 2202c is disposed between the first opening 208 and the third opening 220, and gas distributor 2202d is disposed between the second opening 214 and the fourth opening 226. In such embodiments, gas distributors 2202c and 2202d include gas directing channels for directing an inert gas across the first opening 208, the second opening 214, the third opening 220, and the fourth opening 226. In some embodiments, both gas distributors 2202c and 2202d are the same as gas distributor 1902c in FIG. 19 and, as described above, may be configured to include both a first vertical gas directing channel and a second vertical gas directing channel.

[0121] In some embodiments, the transfer chamber 2200 may be configured to include internal equivalents of the gas diffusers 2202a, 2202b, 2202c, 2202d, 2202e, and 2202f as described above. In some embodiments, the transfer chamber 2200 includes at least the gas diffusers 2202a and 2202b. In some embodiments, the transfer chamber 2200 includes at least the gas diffusers 2202e and 2202f. In some embodiments, the transfer chamber 2200 includes at least the gas diffusers 2202c and 2202d.

[0122] FIG. 23 shows a further example of a transfer chamber configuration for a quad-chamber type transfer chamber as described above. According to an embodiment of the present disclosure, the transfer chamber 2300 includes a combination of the gas diffuser of the transfer chamber 2100 (FIG. 21) and the gas diffuser of the transfer chamber 2200 (FIG. 22) as described above, that is, the gas diffusers 2102a, 2102b, 2102c, 2102d, 2102e, 2102f and the gas diffusers 2202a, 2202b, 2202c, 2202d, 2202e, and 2202f.

[0123] Also, various embodiments of the present disclosure provide a transfer chamber including one or more gas diffusers for preventing moisture from entering the transfer chamber. FIGS. 24 and 25 show diagrams of a transfer chamber 2400 including a gas diffuser according to one or more embodiments of the present disclosure. FIG. 24 shows a cutaway side view of the transfer chamber 2400, and FIG. 25 shows a cutaway plan view of the transfer chamber 2400.

[0124] According to an embodiment of the present disclosure, and referring to FIGS. 24 and 25, the transfer chamber 2400 includes a housing 202, a front surface 204, a rear surface 206, a first gate valve 212, a rear gate valve 234, a first passage 210, and a substrate support 232 for holding the substrate 118. In some embodiments, the transfer chamber 2400 is illustrated as including a gas diffuser 2402 disposed at the upper part of the housing 202 in FIG. 24, but the gas diffuser 2402 can be disposed at other locations within the transfer chamber 2400. In such embodiments, the gas diffuser 2402 is constructed and arranged to provide a flow of inert gas into the first passage within the housing 202 (shown as flow arrow 2406). In some embodiments, the gas diffuser 2402 is disposed in proximity to the rear gate valve 234. In some embodiments, the gas diffuser 2402 is disposed in proximity to the first gate valve 212 (i.e., the front gate valve).

[0125] According to an embodiment of the present disclosure, the gas diffuser may be configured to introduce an inert gas into the first passage, thereby providing a higher pressure within the transfer chamber 2400 as compared to an adjacent chamber (not shown) connected to the front surface 204 of the housing 202. In such embodiments, the higher pressure within the transfer chamber 2400 prevents moisture from entering the transfer chamber 2400 when the first gate valve 212 is opened. According to an embodiment of the present disclosure, the gas diffuser 2402 of FIGS. 24 and 25 can be used in combination with any continuous transfer chamber configuration to prevent moisture from entering the transfer chamber of the present disclosure.

[0126] According to an embodiment of the present disclosure, a transfer chamber of the present disclosure (i.e., transfer chambers 500, 700, 900, 1100, 1300, 1500, 1700, 1900, 2100, 2200, 2300, and 2400) can be utilized as part of a semiconductor processing system such as the exemplary semiconductor processing system 100 of FIG. 1. In such an embodiment, referring to FIGS. 1 and 5 - 25, the semiconductor processing system 100 includes a transfer chamber (e.g., transfer chamber 500 of FIG. 5) provided with a housing 202. In such an embodiment, the equipment front - end module 110 (EFEM) is connected to the front surface 204 of the housing 202 of the transfer chamber (e.g., 500), and the equipment front - end module 110 includes a front - end substrate transfer robot 146. In such an embodiment, the semiconductor processing system 100 includes a back - end transfer module 104 (BETM) connected to the rear surface 206 of the housing 202 of the transfer chamber (e.g., 500), and the back - end transfer module 104 couples one or more process modules (e.g., process module 102) to the transfer chamber (e.g., 500). In such an embodiment, the transfer chamber (e.g., 500 of FIG. 5) has a first opening 208 through which a substrate 118 is transported in and out of a first passage 210 within the housing 202. The transfer chamber (e.g., transfer chamber 500) includes a first gate valve 212 disposed on the front surface 204 of the housing 202. In such an embodiment, the first gate valve 212 is set to an open position to allow the transfer of the substrate into the first passage 210 or to a closed position to cover the first opening 208 and form a vacuum seal. In such an embodiment, the transfer chamber (e.g., transfer chamber 500) includes one or more gas distributors (e.g., gas distributors 502a, 502b, 502c of FIG. 5) disposed on the housing 202 proximate to the first gate valve 212.In such an embodiment, one or more gas distributors (e.g., gas distributors 502a, 502b, 502c of FIG. 5) are oriented to cover the first opening 208 of the housing 202 and include a plurality of gas directing channels (e.g., gas directing channel 504a of FIG. 5) for forming a gas curtain to cover the first opening 208.

[0127] According to an embodiment of the present disclosure, the semiconductor processing system of the present disclosure may be configured to include two or more transfer chambers of the present disclosure. In such an embodiment, the semiconductor processing system further includes an additional back-end transfer module including one or more connected additional process modules. In such an embodiment, additional transfer chambers (e.g., transfer chambers 500, 700, 900, 1100, 1300, 1500, 1700, 1900, 2100, 2200, 2300, and 2400, etc.) can connect the additional back-end transfer module (and its associated additional process modules).

[0128] As a non-limiting example, FIG. 26 shows a semiconductor processing system 2600 including an equipment front-end module 110 (described above) connected to the front of a first transfer chamber 2602 (e.g., transfer chambers 500, 700, 900, 1100, 1300, 1500, 1700, 1900, 2100, 2200, 2300, and 2400, etc.). The rear of the first transfer chamber 2602 is connected to a first back-end transfer module 2604 including various process modules 102. The front of a second transfer chamber 2606 (e.g., transfer chambers 500, 700, 900, 1100, 1300, 1500, 1700, 1900, 2100, 2200, 2300, and 2400, etc.) is connected behind the first back-end transfer module 2604, and the rear of the second transfer chamber 2606 is connected to a second back-end transfer module 2608 including various process modules 102.

[0129] Various embodiments of the present disclosure also provide a method for preventing moisture from entering the transport chamber. FIG. 27 shows an exemplary method 2700 for preventing moisture from entering the transport chamber.

[0130] According to an embodiment of the present disclosure, method 2700 includes a step 2702 of flowing an inert gas into one or more gas distributors disposed on the housing of the transport chamber. In such an embodiment, the one or more gas distributors are disposed proximate to the first gate valve. Further, in such an embodiment, the one or more gas distributors include a plurality of gas directing channels for directing the inert gas to cover the first opening of the housing and forming a gas curtain to cover the first opening.

[0131] According to an embodiment of the present disclosure, method 2700 includes a step 2704 of opening a first gate valve disposed on the front surface of the housing of the transport chamber.

[0132] According to an embodiment of the present disclosure, method 2700 includes a step 2706 of transporting a substrate into a first passage in the transport chamber and placing the substrate on a substrate support disposed in the first passage.

[0133] According to an embodiment of the present disclosure, method 2700 includes a step 2708 of closing a first gate valve disposed on the front surface of the housing of the transport chamber.

[0134] Also, according to an embodiment of the present disclosure, method 2700 includes a step 2710 of shutting off the gas curtain by stopping the flow of the inert gas into one or more gas distributors disposed on the housing of the transport chamber.

[0135] The method 2700 of FIG. 27 may be adapted to a dual chamber having two passages (and associated components) and a quad chamber having four passages (associated components).

[0136] FIG. 28 illustrates the method of the present disclosure in more detail. FIG. 28 shows a cut-away side view of a portion of a semiconductor processing system 2800 that includes an equipment front-end module 110, a transfer chamber of the present disclosure (in this case, the exemplary transfer chamber 2200 described above), and a back-end transfer module 104. The equipment front-end module 110 is connected to the front face 204 of the transfer chamber 2200, and gas distributors 2202a, 2202c, and 2202e are disposed between the transfer chamber 2400 and the equipment front-end module 110. Prior to opening the first gate valve 212, a flow of inert gas is supplied to a plurality of gas distributors (e.g., 2202a and 2202c) provided in the housing 202 of the transfer chamber 2200. The gas distributors (e.g., 2202a and 2202c) are disposed in proximity to the first gate valve 212, and the gas distributors (e.g., 2202a and 2202c) include a plurality of gas directing channels (not shown) for directing an inert gas (gas flow 2206) to cover the first opening 208 of the housing 202 and form a gas curtain (gas flow 2206) to cover the first opening 208. When the gas curtain (inert flow 2206) covering the first opening is activated, the first gate valve 212 can be opened (shown as a dashed line of the first gate valve 212 in FIG. 28). In such an embodiment, the inert gas flow 2206 and the resulting gas curtain prevent moisture from within the equipment front-end module 110 from entering the transfer chamber 2400. After opening the first gate valve 212 with the gas curtain in place, the substrate 118 can be transferred into the first passage 210 within the transfer chamber 2400 and then placed onto a substrate support 232 disposed within the first passage 210. Once the substrate 118 is placed within the transfer chamber 2400, the first gate valve disposed on the front face of the housing 202 can be closed. After closing the first gate valve 212, the flow of inert gas to the plurality of gas distributors (e.g., 2202a, 2202c, and 2202e) can be stopped, thereby shutting off the gas curtain on the first gate valve 212.According to an embodiment of the present disclosure, this process can be repeated to convey a subsequent substrate within one or more passages disposed in the conveyance chamber 2400, such as the third passage 222.

[0137] Also, in some embodiments, the conveyance chamber 2400 may be configured to include a gas diffuser 2402 (described above with reference to FIG. 24). In such an embodiment, a flow of inert gas is supplied to the gas diffuser 2402 before opening the first gate valve 212. After the substrate 118 is placed on the substrate support 232 and the first gate valve returns to the closed position, the flow of inert gas supplied to the gas diffuser 2402 can be terminated.

[0138] For the purpose of summarizing the invention and advantages achieved over the prior art, certain objects and advantages of the invention have been described above in this disclosure as described. It is understood, of course, that not necessarily all such objects or advantages need to be achieved in accordance with any particular embodiment of the invention. Therefore, for example, one or more advantages taught or suggested in this disclosure may be achieved or optimized in a manner that does not necessarily achieve other objects or advantages that may be taught or suggested in this disclosure, which should be recognized by those skilled in the art.

[0139] All of these embodiments are intended to be within the scope of the invention disclosed in this disclosure. These and other embodiments will become readily apparent to those skilled in the art from the following detailed description of certain embodiments with reference to the accompanying drawings, but the invention is not limited to any particular embodiment disclosed.

Claims

1. A transfer chamber, comprising: A housing having a first opening through which a substrate is moved in and out of a first passage within the housing; A first gate valve disposed on the front surface of the housing, the first gate valve being set to an open position to enable conveyance of the substrate into the first passage through the first opening, or set to a closed position to form a vacuum seal to cover the first opening, the first gate valve; One or more gas distributors disposed on the housing proximate to the first gate valve, the one or more gas distributors comprising a plurality of gas directing channels for directing an inert gas across the first opening of the housing to form a gas curtain across the first opening, a transfer chamber comprising the one or more gas distributors.

2. The one or more gas distributors are disposed within the housing, the transfer chamber according to claim 1.

3. The one or more gas distributors are disposed on an outer surface of the housing, the transfer chamber according to claim 1.

4. The one or more gas distributors are disposed above and / or below the first opening, The gas directing channels extend longitudinally to direct the inert gas across the width of the first opening, the transfer chamber according to claim 1.

5. The one or more gas distributors are disposed laterally of the first opening, The gas directing channels extend laterally to direct the inert gas across the height of the first opening, the transfer chamber according to claim 1.

6. The housing further comprises a second opening disposed laterally of the first opening and a second gate valve disposed on the front surface of the housing, The second gate valve is set to an open position to enable passage of the substrate into a second passage through the second opening, or set to a closed position to form a vacuum seal to cover the second opening, the transfer chamber according to claim 1.

7. The one or more gas distributors are disposed above and / or below the first opening and the second opening, The gas directing channel extends vertically to direct the inert gas across the width of the first opening and the width of the second opening. The transport chamber according to claim 6.

8. Further comprising a second gas distributor disposed above and / or below the second opening, The second gas distributor comprises a second gas directing channel extending vertically to direct the inert gas across the width of the second opening. The transport chamber according to claim 6.

9. The one or more gas distributors are disposed between the first opening and the second opening, The one or more gas distributors, A first laterally extending first lateral gas directing channel for directing the inert gas across the height of the first opening; and A second laterally extending second lateral gas directing channel for directing the inert gas across the height of the second opening. The transport chamber according to claim 6, comprising: The first lateral gas directing channel and the second lateral gas directing channel are constructed and arranged to direct the inert gas in opposite directions respectively. The transport chamber according to claim 6.

10. The housing, A third opening disposed below the first opening; and A third gate valve disposed on the front surface of the housing, the third gate valve being set to an open position to enable the transport of the substrate into a third passage through the third opening, or a closed position to form a vacuum seal to cover the third opening. A third gate valve; and A fourth opening disposed below the second opening and laterally of the third opening, A fourth gate valve disposed on the front surface of the housing, the fourth gate valve being set to an open position to allow the substrate to pass into a fourth passage through the fourth opening, or set to a closed position to form a vacuum seal to cover the fourth opening; and a fourth gate valve. The transfer chamber according to claim 6, further comprising:

11. The one or more gas distributors are disposed laterally of the first opening and the third opening, The gas directing channel extends laterally to direct the inert gas across the height of the first opening and the height of the third opening. The transfer chamber according to claim 10.

12. Further comprising a third gas distributor disposed laterally of the third opening, The third gas distributor includes a third gas directing channel extending laterally to direct the inert gas across the height of the third opening. The transfer chamber according to claim 10.

13. The one or more gas distributors are disposed between the first opening and the third opening, The one or more gas distributors, A first longitudinal gas directing channel extending longitudinally to direct the inert gas across the width of the first opening; and A second longitudinal gas directing channel extending longitudinally to direct the inert gas across the width of the third opening, and The first longitudinal gas directing channel and the second longitudinal gas directing channel are constructed and arranged to direct the inert gas in opposite directions respectively. The transfer chamber according to claim 10.

14. The one or more gas distributors are disposed laterally of the first opening and the third opening, and / or laterally of the second opening and the fourth opening. The transfer chamber according to claim 10.

15. One or more additional gas distributors are disposed above the first opening and the second opening, and / or below the first opening and the second opening, and / or below the third opening and the fourth opening. The transfer chamber according to claim 10.

16. Further comprising a gas diffuser disposed within the first passage of the housing, The gas diffuser is configured to disperse a second inert gas into the first passage of the housing. The transfer chamber according to claim 1.

17. A semiconductor processing system, A transfer chamber according to any one of claims 1 to 16, An equipment front-end module connected to the front surface of the housing of the transfer chamber, the equipment front-end module accommodating a front-end substrate transfer robot, A back-end transfer module connected to the rear surface of the housing of the transfer chamber, the back-end transfer module connecting a process module to the transfer chamber, A controller configured to form a gas curtain between the transfer chamber and the equipment front-end module by starting the flow of an inert gas into one or more gas diffusers disposed on the front surface of the transfer chamber before transporting a substrate into the transfer chamber. A semiconductor processing system comprising:

18. An additional back-end transfer module comprising one or more additional process modules, The semiconductor processing system according to claim 17, further comprising an additional transfer chamber connecting the additional back-end transfer module to the equipment front-end module.

19. A method for preventing moisture from entering a transfer chamber, Flowing an inert gas into one or more gas diffusers disposed on the housing of the transfer chamber, The one or more gas diffusers are disposed in proximity to a first gate valve, The one or more gas diffusers comprising a plurality of gas directing channels for directing the inert gas to cover the first opening of the housing to form a gas curtain covering the first opening, flowing the inert gas, Opening the first gate valve disposed on the front surface of the housing of the transfer chamber, Transporting a substrate into a first passage within the transfer chamber and placing the substrate on a substrate support disposed within the first passage, Closing the first gate valve disposed on the front surface of the housing of the transfer chamber, A method including shutting off the gas curtain by stopping the flow of the inert gas into one or more of the gas distributors disposed on the housing of the transfer chamber. **Claim 20** The method according to claim 19, further comprising flowing a second inert gas into a gas diffuser disposed within the housing of the transfer chamber before opening the first gate valve.

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