Colloidal particle ink composition, colloidal particle pattern formation method, colloidal particle pattern film, and electronic element, each using colloidal particle ink composition

Abstract

To provide a colloidal particle ink composition, a colloidal particle pattern formation method, a colloidal particle pattern film, and an electronic element, each of which uses the colloidal particle ink composition.SOLUTION: There are provided a colloidal particle ink composition, a colloidal particle pattern formation method, a colloidal particle pattern film, and an electronic element, each of which uses the colloidal particle ink composition.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a colloidal particle ink composition, a method for forming a colloidal particle pattern using the same, a colloidal particle pattern film, and an electronic device.

[0002] This research was conducted with the support of the Samsung Future Technology Incubation Project (Project Number: SRFC-MA1901-51) and the National Research Foundation of Korea (Project Numbers: 2021R1A2C2008332 and RS-2024-00445116).

Background Art

[0003] Colloidal particles have been extensively studied in recent years due to their potential applications in optoelectronic devices. For example, as an example of such materials, quantum dots exhibit interesting physical properties such as an adjustable bandgap, narrow bandwidth, high emission efficiency, and solution processability. However, developing a patterning process suitable for such solution-processed nanomaterials still remains a challenge. Photolithography is one of the most promising techniques among the various available patterning methods and can produce high-resolution patterns that meet industrial requirements.

[0004] In conventional photolithography, a target substance is physically or chemically etched based on the characteristics of a pre-pattern of overlapping photoresist to generate a pattern. In this process, the target material has to withstand harsh etching conditions while maintaining its physical properties. However, the luminescence characteristics of nanostructured luminescent materials such as quantum dots may deteriorate during the etching stage due to defects generated over a large surface area. Also, the conventional general direct photopatterning process is utilized as a promising lithography approach to form a pattern through selective chemical conversion of a target layer and an appropriate development stage thereafter, and does not include an etching stage. However, the high-energy irradiation and / or high-temperature heat treatment required for chemical conversion in direct photopatterning raises concerns about potential damage to the inherent luminescence characteristics of nanostructured luminescent materials, particularly quantum dots. Also, the quantum dot pattern formed by direct photopatterning has the disadvantage of low fidelity.

Summary of the Invention

Problems to be Solved by the Invention

[0005] The problems to be solved by the present invention are to provide a colloidal particle ink composition capable of forming a colloidal particle pattern with high fidelity. Also provided are a colloidal particle pattern forming method and a colloidal particle pattern film using the colloidal particle ink composition. Further provided is an electronic device including a colloidal particle pattern formed using the colloidal particle ink composition and having excellent characteristics.

Means for Solving the Problems

[0006] According to one aspect, there is provided a colloidal particle ink composition including colloidal particles and a low-temperature activatable crosslinking agent.

[0007] According to one embodiment, the low-temperature activated crosslinking agent can be thermally activated at a temperature of 0°C to 130°C or activated by ultraviolet light of 200 nm to 380 nm to generate an intermediate.

[0008] According to one embodiment, the low-temperature activated crosslinking agent is also a compound containing a diazo group.

[0009] According to one embodiment, the low-temperature activated crosslinking agent is also a compound represented by the following Chemical Formula 1:

[0010]

Chemical Formula

[0011] In the Chemical Formula 1, L1 and L2 are, independently of each other, a single bond or a C1-C alkylene group substituted or unsubstituted with at least one R1, 30 wherein m1 and m2 are, independently of each other, 1, 2, 3, 4, 5 or 6, Ar1 and Ar2 are a C5-C carbocyclic group substituted or unsubstituted with at least one R1, or a C1-C heterocyclic group substituted or unsubstituted with at least one R1, 60 wherein 60 n1 and n2 are, independently of each other, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10, wherein the sum of n1 and n2 is 2 or more, wherein Q1 to Q3 are, independently of each other, a single bond, O, S, C, C(R2), C(R2)(R3), or a C1-C alkylene group substituted or unsubstituted with at least one R1, 30 wherein X1 and X2 are, independently of each other, O, S, Se, N(R4), C(R4)(R5), wherein 30 R1 to R5 are, independently of each other, hydrogen, deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, a C1-C alkyl group, a C2-C alkenyl group, a C2-C 30 alkenyl group, C2-C30 an alkynyl group, C1-C 30 an alkoxy group, C1-C 30 an alkylthio group, C5-C 60 a carbocyclic group, C1-C 60 a heterocyclic group, or -Si(Q 11 )(Q 12 )(Q 13 ) and Q 11 ~Q 13 are, independently of one another, hydrogen, deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, C1-C 30 an alkyl group, C2-C 30 an alkenyl group, C2-C 30 an alkynyl group, C1-C 30 an alkoxy group, or C1-C 30 an alkylthio group.

[0012] According to another aspect, there is provided a method for forming a colloidal particle pattern using the colloidal particle ink composition.

[0013] According to still another aspect, there is provided a colloidal particle pattern film formed using the colloidal particle ink composition.

[0014] According to still another aspect, there is provided an electronic device including a colloidal particle pattern formed using the colloidal particle ink composition.

Advantages of the Invention

[0015] The colloidal particle pattern formed using the colloidal particle ink composition has high fidelity and can reduce line edge roughness and surface roughness. Further, when forming a colloidal particle pattern using the colloidal particle ink composition, the colloidal particles are crosslinked by a low-temperature activating crosslinking agent, so that a crosslinking reaction occurs without high-temperature heat treatment. Also, since the chemical crosslinking reaction provides excellent chemical durability and / or resistance to solvents, high-quality multi-hue colloidal particle patterns can be formed by repeating ink application and patterning as necessary. Furthermore, crosslinking and patterning can be performed on various colloidal particles having various dimensions or having luminescent or non-luminescent properties.

Brief Description of Drawings

[0016]

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DETAILED DESCRIPTION OF THE INVENTION

[0017] Hereinafter, the present invention will be described in more detail.

[0018] In this specification, terms such as "including" or "having" mean that the features or components described in the specification exist, and do not preclude the possibility that one or more other features or components may be added.

[0019] In this specification, when various components such as layers and films are "on" other components, this includes not only the case where they are "directly on" the other components, but also the case where other components are interposed therebetween.

[0020] [Colloidal Particle Ink Composition] The colloidal particle ink composition provided by one aspect of the present invention includes colloidal particles and a low-temperature activatable crosslinking agent.

[0021] Since the colloidal particle ink composition contains the low-temperature activating crosslinking agent, the colloidal particles are crosslinked by the low-temperature activating crosslinking agent, so that a crosslinking reaction occurs without heat treatment at a high temperature (for example, a temperature exceeding 140°C). As a result, the colloidal particles are damaged by high temperature in the solution process, and the luminescence characteristics and electrical characteristics are deteriorated, or the morphology of the formed pattern thin film is changed or degraded. This phenomenon can be prevented. In addition, since chemical crosslinking is formed in the colloidal particles and the chemical durability and / or resistance to solvents are excellent, deterioration of the previously formed pattern can be prevented even if photopatterning is repeated as necessary. Therefore, a high-quality multi-color colloidal particle pattern can be formed.

[0022] According to one embodiment, the colloidal particles can have a shape such as a dot, a rod, a 2D plate, or a 3D object.

[0023] According to one embodiment, the colloidal particles are also quantum dots.

[0024] According to one embodiment, the quantum dots include semiconductor nanocrystals and organic ligands bonded to the surface of the semiconductor nanocrystals.

[0025] The semiconductor nanocrystals mean crystals of semiconductor compounds. The semiconductor nanocrystals can include any substance having semiconductor or conductor characteristics capable of emitting light of various emission wavelengths depending on their size.

[0026] According to one embodiment, the semiconductor nanocrystals include group III-VI semiconductor compounds; group II-VI semiconductor compounds; group III-V semiconductor compounds; group III-VI semiconductor compounds; group I-III-VI semiconductor compounds; group IV-VI semiconductor compounds; group IV compounds; or any combination thereof.

[0027] According to one embodiment, the group III-VI semiconductor compound includes a binary compound (e.g., In2S3, etc.), a ternary compound (e.g., AgInS, AgInS2, CuInS, CuInS2, etc.), or any combination thereof.

[0028] According to one embodiment, the group II-VI semiconductor compound includes a binary compound (e.g., CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, etc.), a ternary compound (e.g., CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, etc.), a quaternary compound (e.g., CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, etc.), or any combination thereof.

[0029] According to one embodiment, the group III-V semiconductor compound includes a binary compound (e.g., GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, etc.), a ternary compound (e.g., GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP, etc.), a quaternary compound (e.g., GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, etc.), or any combination thereof.

[0030] According to one embodiment, the group III-V semiconductor compound may further contain a group II element. For example, the group III-V semiconductor compound further containing a group II element may include InZnP, InGaZnP, InAlZnP, or any combination thereof.

[0031] According to one embodiment, the group III-VI semiconductor compound includes binary compounds (e.g., GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2Se3, InTe, etc.), ternary compounds (e.g., InGaS3, InGaSe3, etc.), or any combination thereof.

[0032] According to one embodiment, the group I-III-VI semiconductor compound includes ternary compounds (e.g., AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, AgAlO2, etc.), or any combination thereof.

[0033] According to one embodiment, the group IV-VI semiconductor compound includes binary compounds (e.g., SnS, SnSe, SnTe, PbS, PbSe, PbTe, etc.), ternary compounds (e.g., SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, etc.), quaternary compounds (e.g., SnPbSSe, SnPbSeTe, SnPbSTe, etc.), or any combination thereof.

[0034] According to one embodiment, the group IV compound includes single-element compounds (e.g., Si, Ge, etc.), binary compounds (e.g., SiC, SiGe, etc.), or any combination thereof.

[0035] According to one embodiment, the semiconductor nanocrystal includes CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, InP, InN, InAs, GaN, GaP, GaAs, ZnCdS, ZnSeS, ZnCdSeS, CdZnSe, InZnP, InGaP, GaPZnS, GaPZnSe, GaPZnSeS, or any combination thereof.

[0036] According to one embodiment, the diameter of the semiconductor nanocrystal is from about 1 nm to about 10 nm.

[0037] According to one embodiment, the semiconductor nanocrystal has a core-shell structure including a core and a shell covering at least a part of the core.

[0038] According to one embodiment, the shell of the quantum dot can serve as a protective layer for preventing chemical modification of the core and maintaining semiconductor properties, and / or as a charging layer for imparting electrophoretic properties to the quantum dot.

[0039] According to one embodiment, the substance contained in the core is different from the substance contained in the shell.

[0040] According to one embodiment, the shell is a single layer or a multilayer.

[0041] According to one embodiment, the interface between the core and the shell can have a concentration gradient in which the concentration of a specific element present in the shell decreases or increases towards the center.

[0042] The shell of the semiconductor nanocrystal includes the aforementioned group III-VI semiconductor compounds, group II-VI semiconductor compounds, group III-V semiconductor compounds, group III-VI semiconductor compounds, group I-III-VI semiconductor compounds, or group IV-VI semiconductor compounds; metal or non-metal oxides; or combinations thereof.

[0043] According to one embodiment, the metal or non-metal oxide includes binary compounds (e.g., SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, etc.), ternary compounds (e.g., MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, etc.), or any combination thereof.

[0044] According to one embodiment, the semiconductor nanocrystals are synthesized by a wet chemical process, a metalorganic chemical vapor deposition process, a molecular beam epitaxy process, or the like.

[0045] According to one embodiment, the full width of half maximum (FWHM) of the emission wavelength spectrum of the semiconductor nanocrystals is about 45 nm or less. For example, the FWHM of the semiconductor nanocrystals is about 40 nm or less, or about 30 nm or less.

[0046] According to one embodiment, the semiconductor nanocrystals can have forms such as nanoparticles (e.g., spherical, plate-like, pyramid-like, multi-arm, or cubic), nanotubes, nanowires, nanofibers, and the like.

[0047] According to one embodiment, the energy band gap of the quantum dots is controlled by their size, and light in various wavelength bands can be obtained.

[0048] According to one embodiment, the quantum dots can emit red, green, and / or blue light.

[0049] According to one embodiment, by using quantum dots of different sizes, a light-emitting device that emits light of multiple wavelengths can be realized, and it can be configured to combine light of various colors to emit white light, and an element that absorbs light of various wavelengths other than white light can also be realized.

[0050] According to one embodiment, the organic ligand protects the surface of the semiconductor nanocrystals and plays roles such as adjusting the dispersibility in a solvent, and generally used organic ligand compounds can be utilized.

[0051] According to one embodiment, the organic ligand contains a C4-C 30 fatty acid or a derivative thereof.

[0052] According to one embodiment, the organic ligand includes oleic acid, myristic acid, lauric acid, palmitic acid, palmitoleic acid, stearic acid, oleylamine, n-octylamine, hexadecylamine, trioctylamine, octanethiol, dodecanethiol, hexylphosphonic acid, n-octylphosphonic acid, tetradecylphosphonic acid, octadecylphosphonic acid, or any combination thereof.

[0053] According to one embodiment, the low-temperature activating crosslinking agent can be thermally activated at a temperature of 0°C to 130°C to generate an intermediate. For example, the low-temperature activating crosslinking agent can be thermally activated at a temperature of 20°C to 120°C, or 50°C to 115°C to generate an intermediate.

[0054] According to one embodiment, the low-temperature activating crosslinking agent can be activated by ultraviolet light to generate an intermediate. For example, the low-temperature activating crosslinking agent can be activated by ultraviolet light of 200 nm to 380 nm, 300 nm to 380 nm, about 254 nm, or about 365 nm to generate an intermediate.

[0055] According to one embodiment, the low-temperature activating crosslinking agent can be used in the colloidal particle patterning method described below. For example, the low-temperature activating crosslinking agent can be used in the photoresist-guided indirect photopatterning method.

[0056] According to one embodiment, the low-temperature activating crosslinking agent can be used in a direct photopatterning method.

[0057] According to one embodiment, the low-temperature activating crosslinking agent is also a compound containing a diazo group. For example, the diazo group can induce carbene-mediated crosslinking by annealing as exemplified below.

[0058]

Chemical formula

[0059] According to one embodiment, the low-temperature activating crosslinking agent is also a compound represented by the following Chemical Formula 1:

[0060]

Chem.

[0061] In Chemical Formula 1, L1 and L2 are, independently of each other, a single bond or a C1-C alkylene group substituted or unsubstituted with at least one R1, 30 and are an alkylene group, m1 and m2 are, independently of each other, 1, 2, 3, 4, 5 or 6, Ar1 and Ar2 are a C5-C carbocyclic group substituted or unsubstituted with at least one R1, or a C1-C heterocyclic group substituted or unsubstituted with at least one R1, 60 and are a carbocyclic group, 60 or are a heterocyclic group, n1 and n2 are, independently of each other, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10, and the sum of n1 and n2 is 2 or more, Q1 to Q3 are, independently of each other, a single bond, O, S, C, C(R2), C(R2)(R3), or a C1-C alkylene group substituted or unsubstituted with at least one R1, 30 and are an alkylene group, X1 and X2 are, independently of each other, O, S, Se, N(R4), C(R4)(R5), R1 to R5 are, independently of each other, hydrogen, deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, a C1-C alkyl group, a C2-C alkenyl group, a C2-C alkynyl group, a C1-C alkoxy group, a C1-C alkylthio group, a C5-C carbocyclic group, a C1-C heterocyclic group, or -Si(Q 30 alkyl group, C2-C 30 alkenyl group, C2-C 30 alkynyl group, C1-C 30 alkoxy group, C1-C 30 alkylthio group, C5-C 60 carbocyclic group, C1-C 60 heterocyclic group, or -Si(Q 11 )(Q 12)(Q 13 ) and Q 11 ~Q 13 are, independently of each other, hydrogen, deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, C1-C 30 alkyl group, C2-C 30 alkenyl group, C2-C 30 alkynyl group, C1-C 30 alkoxy group, or C1-C 30 alkylthio group.

[0062] According to one embodiment, L1 and L2 are, independently of each other, a single bond, a methylene group, or an ethylene group.

[0063] According to one embodiment, m1 and m2 are, independently of each other, 1 or 2.

[0064] According to one embodiment, Ar1 and Ar2 are, independently of each other, a substituted or unsubstituted phenyl group.

[0065] According to one embodiment, the sum of n1 and n2 is 4 to 6.

[0066] According to one embodiment, the low-temperature activating crosslinking agent is also a compound represented by the following Chemical Formula 2:

[0067]

Chemical Formula

[0068] In the Chemical Formula 2, the descriptions regarding L1, L2, m1, m2, n1, n2, X1, X2, and Q1 to Q3 are the same as those described in this specification, R 11 ~R 15 and R 21 ~R 25 the descriptions regarding are, independently of each other, the same as the description regarding R1.

[0069] According to one embodiment, the crosslinkable compound is one or more selected from the following Compounds 1 to 7:

[0070] [Chemical formula] [Chemical formula] [Chemical formula]

[0071] According to one embodiment, the low-temperature activatable crosslinking agent can form a covalent bond with the colloidal particles.

[0072] For example, when the colloidal particles are quantum dots, the quantum dots include semiconductor nanocrystals and organic ligands on the surface of the semiconductor nanocrystals, and the low-temperature activatable crosslinking agent can form a covalent bond (for example, a carbon-carbon bond) with the organic ligands.

[0073] According to one embodiment, the low-temperature activatable crosslinking agent is also hydrophobic.

[0074] Generally, a photoresist often contains a hydrophilic material containing a large number of hydroxyl groups (-OH). However, since the low-temperature activatable crosslinking agent satisfies the above-described characteristics, when forming a photoresist pattern using the colloidal particle ink composition, a pattern can be stably formed without a hydrophobic treatment process for the substrate, and there is an advantage that a phenomenon in which the optical and electrical properties of the colloidal particles are deteriorated due to a hydrophobic treatment or the like can be prevented.

[0075] According to one embodiment, the colloidal particle ink composition does not contain a hydrophobic treatment agent (for example, hexasiloxane).

[0076] According to one embodiment, the colloidal particle ink composition does not contain a tackifier.

[0077] According to one embodiment, the colloidal particle ink composition may further contain a solvent.

[0078] According to one embodiment, the solvent is also an organic solvent. For example, the solvent includes 1-octadecene (ODE), trioctylamine (TOA), trioctylphosphine (TOP), oleylamine, or any combination thereof.

[0079] According to one embodiment, the colloidal particle ink composition can be used in a solution process.

[0080] [Colloidal Particle Pattern Formation Method] According to another aspect of the present invention, a method for forming a colloidal particle pattern using the colloidal particle ink composition is provided.

[0081] In the method for forming a colloidal particle pattern using the colloidal particle ink composition, since the colloidal particles are crosslinked by a low-temperature activating crosslinking agent, a crosslinking reaction occurs without heat treatment at a high temperature (for example, a temperature exceeding 140 °C). As a result, in the solution process, the colloidal particles are damaged, and phenomena such as deterioration of luminescence characteristics and electrical characteristics, or changes or deterioration of the morphology of the formed pattern thin film can be prevented. In addition, chemical crosslinking is formed on the colloidal particles, and since it is excellent in chemical durability and / or resistance to solvents, deterioration of the previously formed pattern can be prevented even if photopatterning is repeated as necessary, so that a high-quality multi-color colloidal particle pattern can be formed.

[0082] According to one embodiment, the method for forming a colloidal particle pattern is also a photoresist-induced indirect photopatterning method.

[0083] For example, the method for forming the colloidal particle pattern is a method of forming a thin film using the colloidal particle ink composition on a predetermined photoresist pattern and removing the photoresist pattern to form a colloidal particle pattern. That is, the photoresist pattern can serve as a guide as a reverse pattern of the colloidal particle pattern to be formed.

[0084] According to one embodiment, the method for forming the colloidal particle pattern includes applying a first quantum dot ink composition including first colloidal particles and a first low-temperature activatable crosslinking agent on a first photoresist pattern. annealing the applied first colloidal particle ink composition at a temperature of 0°C to 130°C. removing the first photoresist pattern to form a first colloidal particle pattern.

[0085] According to one embodiment, the step of applying the first colloidal particle ink composition can utilize a spin coating method, a spray coating method, a casting method, a drop casting method, a dipping method, an LB (Langmuir-Blodgett) method, an inkjet printing method, a screen printing method, a laser printing method, an imprinting method, a laser induced thermal imaging (LITI) method, etc.

[0086] According to one embodiment, the step of annealing the applied first colloidal particle ink composition at a temperature of 0°C to 130°C is performed for 1 minute to 60 minutes. For example, the annealing step is performed for 10 minutes to 30 minutes.

[0087] According to one embodiment, the thickness of the first photoresist pattern is 0.5 nm to 10 μm. For example, the thickness of the first photoresist pattern is 1 nm to 1 μm, 5 nm to 100 nm, or 10 nm to 50 nm.

[0088] According to one embodiment, the thickness of the first colloidal particle pattern is 1 nm to 50 nm. For example, the thickness of the first colloidal particle pattern is 10 nm to 40 nm, or 15 nm to 25 nm.

[0089] According to one embodiment, the ratio of the thickness of the first photoresist pattern to the thickness of the first colloidal particle pattern is 1:1 to 1:0.7.

[0090] By the thickness of the first colloidal particle pattern and the thickness of the first photoresist pattern satisfying the aforementioned ranges, the fidelity of the first colloidal particle pattern can be improved.

[0091] According to one embodiment, the colloidal particle pattern forming method may further include a step of reducing the thickness of the first photoresist pattern and / or the first colloidal particle pattern by plasma etching.

[0092] By adjusting the thickness of the first photoresist pattern and / or the first colloidal particle pattern by the plasma etching, it can be adjusted to satisfy the aforementioned thickness ratio, and the fidelity of the first colloidal particle pattern can be improved.

[0093] According to one embodiment, the plasma etching can utilize a reactive ion etching system. For example, the plasma etching is performed using an Ar / O2 mixed gas (about 10 sccm to about 80 sccm for Ar and about 1 sccm to about 30 sccm for O2 gas) and radio frequency (RF) power of about 10 W to 100 W.

[0094] According to one embodiment, the colloidal particle pattern forming method does not include a step of reducing the thickness of the first photoresist pattern and / or the first colloidal particle pattern by plasma etching. For example, when the thickness of the first photoresist pattern is relatively thin (for example, when the thickness of the first photoresist pattern is 1 nm to 1 μm, 5 nm to 100 nm, or 10 nm to 50 nm), the colloidal particle pattern forming method does not include a step of reducing the thickness of the first photoresist pattern and / or the first colloidal particle pattern by plasma etching.

[0095] According to one embodiment, the step of removing the first photoresist pattern to form the first colloidal particle pattern is performed using a strip solvent. For example, the strip solvent is acetone.

[0096] According to one embodiment, the step of removing the first photoresist pattern to form the first colloidal particle pattern may further include a step of subjecting the first photoresist pattern to ultrasonic treatment.

[0097] According to one embodiment, the colloidal particle pattern forming method includes a step of forming a second photoresist pattern on the first colloidal particle pattern, a step of applying a second colloidal particle ink composition including second colloidal particles and a second low-temperature activating crosslinking agent on the second photoresist pattern, a step of annealing the applied second colloidal particle ink composition at a temperature of 0°C to 130°C, and a step of removing the second photoresist pattern to form a second colloidal particle pattern.

[0098] According to one embodiment, the first colloidal particles and the second colloidal particles can exhibit different hues from each other.

[0099] The method for forming a colloidal particle pattern using the colloidal particle ink composition is such that chemical cross-linking is formed in the colloidal particles, and it is excellent in chemical durability and / or resistance to solvents. Therefore, even if patterning (for example, photolithography, solution process patterning, etc.) is repeated as necessary, deterioration of the previously formed pattern can be prevented, and thus a high-quality multi-color colloidal particle pattern can be formed.

[0100] According to one embodiment, the step of applying the second colloidal particle ink composition can utilize a spin coating method, a spray coating method, a casting method, a drop casting method, a dipping method, an LB (Langmuir - Blodgett) method, an inkjet printing method, a screen printing method, a laser printing method, an imprinting method, a laser induced thermal imaging (LITI) method, etc.

[0101] According to one embodiment, the step of annealing the applied second colloidal particle ink composition at a temperature of 0°C to 130°C is performed for 1 minute to 60 minutes. For example, the annealing step is performed for 10 minutes to 30 minutes.

[0102] According to one embodiment, the thickness of the second photoresist pattern is 0.5 nm to 50 nm. For example, the thickness of the second photoresist pattern is 5 nm to 40 nm, or 10 nm to 25 nm.

[0103] According to one embodiment, the thickness of the second colloidal particle pattern is 1 nm to 50 nm. For example, the thickness of the second colloidal particle pattern is 10 nm to 40 nm, or 15 nm to 25 nm.

[0104] According to one embodiment, the method for forming a colloidal particle pattern may further include a step of reducing the thickness of the second photoresist pattern and / or the second colloidal particle pattern by plasma etching.

[0105] According to one embodiment, the step of removing the second photoresist pattern to form the second colloidal particle pattern is performed using a strip solvent. For example, the strip solvent is acetone.

[0106] According to one embodiment, the step of removing the second photoresist pattern to form the second colloidal particle pattern may further include the step of subjecting the second photoresist pattern to ultrasonic treatment.

[0107] According to one embodiment, the method for forming a colloidal particle pattern includes forming a third photoresist pattern on the second colloidal particle pattern, applying a third colloidal particle ink composition containing third colloidal particles and a third low-temperature activating crosslinking agent on the third photoresist pattern, annealing the applied third colloidal particle ink composition at a temperature of 0°C to 130°C, and removing the third photoresist pattern to form a third colloidal particle pattern.

[0108] According to one embodiment, the first colloidal particles and the third colloidal particles can exhibit different hues from each other.

[0109] According to one embodiment, the second colloidal particles and the third colloidal particles can exhibit different hues from each other.

[0110] According to one embodiment, the step of applying the third colloidal particle ink composition can utilize a spin coating method, a spray coating method, a casting method, a drop casting method, a dipping method, an LB (Langmuir - Blodgett) method, an inkjet printing method, a screen printing method, a laser printing method, an imprinting method, a laser induced thermal imaging (LITI) method, etc.

[0111] According to one embodiment, the step of annealing the applied third colloidal particle ink composition at a temperature of 0°C to 130°C is performed for 1 minute to 60 minutes. For example, the annealing step is performed for 10 minutes to 30 minutes.

[0112] According to one embodiment, the thickness of the third photoresist pattern is 0.5 nm to 50 nm. For example, the thickness of the third photoresist pattern is 5 nm to 40 nm, or 10 nm to 25 nm.

[0113] According to one embodiment, the thickness of the third colloidal particle pattern is 1 nm to 50 nm. For example, the thickness of the third colloidal particle pattern is 10 nm to 40 nm, or 15 nm to 25 nm.

[0114] According to one embodiment, the colloidal particle pattern forming method may further include a step of reducing the thickness of the third photoresist pattern or the third colloidal particle pattern by plasma etching.

[0115] According to one embodiment, the step of removing the third photoresist pattern to form a third colloidal particle pattern is performed using a strip solvent. For example, the strip solvent is acetone.

[0116] According to one embodiment, the step of removing the third photoresist pattern to form a third colloidal particle pattern may further include a step of subjecting the third photoresist pattern to ultrasonic treatment.

[0117] [Colloidal Particle Pattern Film] According to still another aspect of the present invention, there is provided a colloidal particle pattern film formed using the colloidal particle ink composition.

[0118] The colloidal particle pattern film formed using the colloidal particle ink composition undergoes a crosslinking reaction without heat treatment at a high temperature (e.g., a temperature exceeding 140°C) because the colloidal particles are crosslinked by a low-temperature activating crosslinking agent. As a result, it is possible to prevent phenomena such as damage to the colloidal particles in the solution process, degradation of luminescence characteristics and electrical characteristics, and changes or deterioration in the morphology of the formed pattern thin film. In addition, chemical crosslinking is formed in the colloidal particles, and since it is excellent in chemical durability and / or resistance to solvents, high-quality multi-color colloidal particle patterns can be formed by repeating photopatterning as needed.

[0119] A colloidal particle pattern film according to one embodiment is manufactured by the aforementioned colloidal particle pattern forming method.

[0120] According to one embodiment, the colloidal particle pattern film includes a substrate and a colloidal particle pattern formed on the substrate.

[0121] According to one embodiment, the substrate is selected in consideration of mechanical strength, thermal stability, surface smoothness, ease of handling, waterproofness, etc. For example, a silicon wafer or a glass substrate, or a plastic film such as polyethersulfone, polyacrylate, polyetherimide, polyimide, polyethylene naphthalate, polyethylene terephthalate, or an organic substrate coated with those plastic films can be used.

[0122] According to one embodiment, the substrate has a single-layer or multi-layer structure.

[0123] For example, the substrate is a single layer containing a resin. As another example, the substrate has a multi-layer structure including two or more layers each containing two or more different resins. As still another example, the substrate has a multi-layer structure including a layer containing a resin and a functional layer, and the functional layer is, for example, an adhesive layer, a corrosion prevention layer, an antireflection layer, a hard coating layer, or a combination thereof.

[0124] According to one embodiment, the thickness of the colloidal particle pattern is 1 nm to 200 nm. For example, the thickness of the colloidal particle pattern is 5 nm to 100 nm, 10 nm to 40 nm, or 15 nm to 25 nm.

[0125] [Electronic device] According to still another aspect of the present invention, an electronic device including the colloidal particle pattern is provided.

[0126] According to one embodiment, the electronic device is a colloidal particle light-emitting device, and the colloidal particle light-emitting device includes a first electrode, a second electrode facing the first electrode, and an intermediate layer disposed between the first electrode and the second electrode and including a light-emitting layer, and the light-emitting layer includes the colloidal particle pattern.

[0127] According to one embodiment, the electronic device is a thin film transistor (TFT), an electrochromic device (EC), a light emitting diode (LED), a solar cell, or a photodiode.

[0128] According to one embodiment, the electronic device is also a light-emitting device.

[0129] FIG. 8 schematically shows an example of a light-emitting device according to one aspect of the present invention. The light-emitting device 10 includes a first electrode 110, an intermediate layer 150, and a second electrode 190, and the intermediate layer 150 includes a hole transport region 120 and a light-emitting layer 130.

[0130] A substrate (not shown) may be further disposed below the first electrode 110 and / or above the second electrode 190. As the substrate, a glass substrate or a plastic substrate having excellent mechanical strength, thermal stability, transparency, surface smoothness, ease of handling, and waterproofness can be used.

[0131] The first electrode 110 is formed, for example, by providing a first electrode material on the upper part of a substrate using a vapor deposition method, a sputtering method, or the like.

[0132] The first electrode 110 is also a transmissive electrode. To form the first electrode 110 which is a transmissive electrode, the first electrode material is selected from indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), antimony tin oxide (ATO), fluorine tin oxide (FTO), silver nanoparticles, silver nanowires, carbon nanotubes (CNT), and any combination thereof, but is not limited thereto. Alternatively, to form the first electrode 110 which is a semi-transmissive electrode or a reflective electrode, the first electrode material is selected from magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), and any combination thereof, but is not limited thereto.

[0133] A hole transport region 120 may be disposed on the first electrode 110.

[0134] The hole transport region includes a hole injection layer, a hole transport layer, a light emission auxiliary layer, an electron blocking layer, or a combination thereof.

[0135] The hole transport layer may contain a hole transporting compound.

[0136] For example, the hole transporting compound is a hole transporting polymer compound such as TFB (poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)]) or PTAA (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]).

[0137] [Chemical formula]

[0138] As another example, the hole transporting compound is a hole transporting low molecular weight compound that does not contain a π - electron - deficient nitrogen - containing ring. Examples of the hole transporting low molecular weight compound include carbazole - containing compounds, amine compounds, and the like.

[0139] On the hole transport region 120, a light - emitting layer 130 may be disposed.

[0140] The light - emitting layer includes a colloidal particle pattern formed using the aforementioned colloidal particle ink composition.

[0141] The thickness of the light - emitting layer 130 is about 100 Å to about 1,000 Å, for example, about 200 Å to about 600 Å. When the thickness of the light - emitting layer 130 satisfies the above - mentioned range, excellent light - emitting characteristics can be exhibited without a substantial increase in driving voltage.

[0142] On the light - emitting layer 130, an electron transport region 140 may be disposed.

[0143] The electron transport region includes a buffer layer, a hole - blocking layer, an electron - regulating layer, an electron - transport layer, an electron - injection layer, or any combination thereof.

[0144] For example, the electron transport region can have a stacked structure such as an electron - transport layer / electron - injection layer, a hole - blocking layer / electron - transport layer / electron - injection layer, an electron - regulating layer / electron - transport layer / electron - injection layer, or a buffer layer / electron - transport layer / electron - injection layer.

[0145] The electron transport region may contain an electron - transporting compound.

[0146] For example, the electron transporting compound is a metal-free compound containing at least one π-electron deficient nitrogen-containing ring, BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), Bphen (4,7-diphenyl-1,10-phenanthroline), Alq3, BAlq, TAZ (3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole), NTAZ, or TPBi.

[0147] [Chemical formula]

[0148] The "π-electron deficient nitrogen-containing ring" means a C1-C heterocyclic group having at least one *-N=*' moiety as a ring-forming moiety. 60 It means a heterocyclic group.

[0149] For example, the "π-electron deficient nitrogen-containing ring" is i) a five- to seven-membered hetero monocyclic group having at least one *-N=*' moiety, ii) a hetero polycyclic group in which two or more of the five- to seven-membered hetero monocyclic groups having at least one *-N=*' moiety are condensed with each other, or iii) a hetero polycyclic group in which at least one of the five- to seven-membered hetero monocyclic groups having at least one *-N=*' moiety and at least one C5-C 60 carbon ring group are condensed with each other.

[0150] Examples of the π-electron-deficient nitrogen-containing ring include imidazole, pyrazole, thiazole, isothiazole, oxazole, isoxazole, pyridine, pyrazine, pyrimidine, pyridazine, indazole, purine, quinoline, isoquinoline, benzoquinoline, phthalazine, naphthyridine, quinoxaline, quinazoline, cinnoline, phenanthridine, acridine, phenanthroline, phenazine, benzimidazole, isobenzothiazole, benzoxazole, isobenzoxazole, triazole, tetrazole, oxadiazole, triazine, thiadiazole, imidazopyridine, imidazopyrimidine, azacarbazole, and the like.

[0151] In addition to the aforementioned electron transporting compound, the electron transport region may further contain a metal or a metal complex. For example, the electron transport region may further contain oxides and halides (e.g., fluorides, chlorides, bromides, iodides, etc.) of alkali metals, alkaline earth metals, and rare earth metals, an alkali metal complex, an alkaline earth metal complex, or a combination thereof. For example, the electron transport region may further contain LiQ. For example, the electron transport region may further contain molybdenum oxide (MoO x ).

[0152]

Chemical formula

[0153] The thickness of the electron transport region is about 100 Å to about 2,000 Å, for example, about 150 Å to about 1,000 Å. When the thickness of the electron transport region satisfies the range as described above, electron transport characteristics to be satisfied can be obtained without a substantial increase in driving voltage.

[0154] A second electrode 190 is disposed on the electron transport region 140. The second electrode 190 may be a cathode which is an electron injection electrode.

[0155] As the material of the second electrode 190, a metal, an alloy, an electrically conductive compound, or a combination thereof having a low work function can be used.

[0156] The second electrode 190 includes at least one selected from lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), silver-magnesium (Ag-Mg), ITO, and IZO, but is not limited thereto. The second electrode 190 is a transmissive electrode, a semi-transmissive electrode, or a reflective electrode.

[0157] The second electrode 190 can have a single-layer structure that is a single layer or a multilayer structure having a plurality of layers.

[0158] Each layer of the light-emitting element is formed by using various methods such as a vacuum deposition method, a spin coating method, a casting method, an LB (Langmuir-Blodgett) method, an inkjet printing method, a laser printing method, and a laser induced thermal imaging (LITI) method.

[0159] According to one embodiment, the electronic device is also a flexible electronic device.

[0160] According to one embodiment, the electronic device is also a stretchable electronic device.

[0161] [Definition of Substituent] In this specification, C5-C 60 The carbocyclic group means a monocyclic group or a polycyclic group having 5 to 60 carbon atoms containing only carbon as ring-forming atoms. The C5-C 60 The carbocyclic group is an aromatic carbocyclic group or a non-aromatic carbocyclic group. The C5-C 60The carbocyclic group is a ring such as benzene, a monovalent group such as a phenyl group, or a divalent group such as a phenylene group. Alternatively, depending on the number of substituents linked to the C5-C 60 carbocyclic group, various modifications are possible, such as the carbocyclic group being a trivalent group or a tetravalent group. 60 In this specification, the C1-C

[0162] The heterocyclic group means a group having the same structure as the C5-C 60 carbocyclic group, but containing at least one heteroatom selected from N, O, Si, P, and S in addition to carbon (with the number of carbon atoms being 1 to 60) as a ring-forming atom. 60 In this specification, the C1-C

[0163] The alkyl group means a linear or branched aliphatic hydrocarbon group having 1 to 30 carbon atoms. Specific examples thereof include a methyl group, an ethyl group, a propyl group, an isobutyl group, a sec-butyl group, a ter-butyl group, a pentyl group, an iso-amyl group, a hexyl group, a heptyl group, an n-octyl group, a 2-ethylhexyl group, and the like. 30

[0164] In this specification, the C2-C 30 The alkenyl group means a hydrocarbon group containing one or more carbon-carbon double bonds in the middle or at the end of the C2-C 30 alkyl group. Specific examples thereof include an ethenyl group, a propenyl group, a butenyl group, and the like. 30

[0165] In this specification, the C2-C 30 The alkynyl group means a hydrocarbon group containing one or more carbon-carbon triple bonds in the middle or at the end of the C2-C 30 alkyl group. Specific examples thereof include an ethynyl group, a propynyl group, and the like.

[0166] In this specification, the C1-C 30 The alkoxy group is -OA 101 (where A 101 is the C1-C 30It means a monovalent group having a chemical formula of (which is an alkyl group), and specific examples thereof include a methoxy group, an ethoxy group, an isopropyloxy group, and the like.

[0167] In this specification, C1-C 30 An alkylthio group is -SA 101 (where A 101 is the above C1-C 30 It means a monovalent group having a chemical formula of (which is an alkyl group), and specific examples thereof include a methylthio group, an ethylthio group, an isopropylthio group, and the like.

[0168] In this specification, * and *' mean the bonding sites with adjacent atoms in the chemical formula unless otherwise defined.

[0169] Hereinafter, the present invention will be described more specifically with reference to examples. These examples are for more specifically explaining the present invention, and the scope of the present invention is not limited by the examples.

[0170] [Examples] Synthesis Example 1: Production of Compounds 1 - 7

[0171] [Chemical formula]

[0172] (1) Production of Crosslinkable Compound 1 Under an argon atmosphere, a mixed solution of phenylacetyl chloride (1020 mg, 6.60 mmol) and pentaerythritol (150 mg, 1.10 mmol) was stirred at 140 °C for 18 hours. Then, after cooling to room temperature, extraction was performed using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, and then concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (developing solvent = ethyl acetate:hexane = 1:4 volume ratio) to obtain a white solid (483 mg, 72%). 1 H-NMR (400 MHz, CDCl3) δ: 7.29 - 7.15 (m, 20H), 3.87 (s, 8H), 3.51 (s, 8H).

[0173] Under an argon atmosphere, the white solid (400 mg, 0.66 mmol) obtained in the previous step and p-ABSA (789 mg, 3.28 mmol) were dissolved in anhydrous THF (10 mL) and stirred for 10 minutes. DBU (670 mg, 4.40 mmol) was gradually added dropwise to the solution, and then the mixture was stirred at room temperature for 12 hours. Subsequently, extraction was carried out using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (developing solvent = ethyl acetate:hexane = 1:5 by volume). The obtained substance was recrystallized using chloroform and methanol to obtain crosslinkable compound 1 as an orange solid (433 mg, 92%). 1 1H-NMR (400 MHz, CDCl3) δ: 7.43 - 7.34 (m, 16H), 7.21 - 7.16 (t, J = 8.0 Hz, 4H), 4.41 (s, 8H).

[0174] (2) Production of Crosslinkable Compound 2 Under an argon atmosphere, a mixed solution of phenylacetyl chloride (2193 mg, 14.18 mmol) and dipentaerythritol (500 mg, 1.97 mmol) was stirred at 120 °C for 18 hours. After cooling to room temperature, extraction was carried out using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (developing solvent = ethyl acetate:hexane = 1:3 by volume) to obtain a viscous yellow liquid (1506 mg, 80%). 1 1H-NMR (400 MHz, CDCl3) δ: 7.31 - 7.18 (m, 30H), 3.87 (s, 12H), 3.53 (s, 12H), 2.87 (s, 4H).

[0175] Under an argon atmosphere, the sticky yellow liquid (1000 mg, 1.04 mmol) obtained in the previous step and p-ABSA (1795 mg, 7.47 mmol) were dissolved in anhydrous acetonitrile (20 mL) and stirred for 10 minutes. DBU (1580 mg, 10.38 mmol) was gradually added dropwise to the solution, and then the mixture was stirred at room temperature for 24 hours. Next, extraction was performed using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, concentrated using a rotary evaporator, and then the substance was purified by silica gel column chromatography (developing solvent = dichloromethane). The obtained substance was recrystallized using chloroform and methanol to obtain crosslinkable compound 2 as an orange solid (577 mg, 49%). 1 1H-NMR (400 MHz, CDCl3) δ: 7.39 - 7.33 (m, 24H), 7.17 - 7.13 (t, 6H), 4.37 (s, 12H).

[0176] (3) Production of Crosslinkable Compound 3 Under an argon atmosphere, a mixed solution of 4-methoxyphenylacetyl chloride (1605 mg, 11.02 mmol) and pentaerythritol (300 mg, 2.203 mmol) was stirred at 120 °C for 12 hours. After cooling to room temperature, extraction was performed using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (developing solvent = ethyl acetate:hexane = 1:1 by volume ratio) to obtain a white solid (1498 mg, 93%). 1 1H-NMR (400 MHz, CDCl3) δ: 7.09 (d, J = 8 Hz, 8H), 6.82 (d, J = 8 Hz, 8H), 3.91 (s, 8H), 3.77 (s, 12H), 3.46 (s, 8H).

[0177] Under an argon atmosphere, the white solid (300 mg, 0.412 mmol) obtained in the previous step and p-ABSA (611 mg, 2.470 mmol) were dissolved in anhydrous acetonitrile (7 mL) and stirred for 10 minutes. DBU (376 mg, 2.470 mmol) was gradually added dropwise to the solution, and then the mixture was stirred at room temperature for 24 hours. Subsequently, extraction was performed using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (developing solvent = ethyl acetate:dichloromethane = 1:20 by volume). The obtained substance was recrystallized using chloroform and methanol to obtain crosslinkable compound 3 as an orange solid (433 mg, 92%). 1 1H-NMR (400 MHz, CDCl3) δ: 7.31 (d, J = 8 Hz, 8H), 6.91 (d, J = 8 Hz, 8H), 4.36 (s, 8H), 3.80 (s, 12H).

[0178] (4) Production of Crosslinkable Compound 4 Under an argon atmosphere, a mixed solution of 4-methoxyphenylacetyl chloride (1605 mg, 11.02 mmol) and pentaerythritol (300 mg, 2.203 mmol) was stirred at 120 °C for 12 hours. After cooling to room temperature, extraction was performed using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (developing solvent = ethyl acetate:hexane = 1:1 by volume) to obtain a white solid (1498 mg, 93%). 1 1H-NMR (400 MHz, CDCl3) δ: 7.09 (d, J = 8 Hz, 8H), 6.82 (d, J = 8 Hz, 8H), 3.91 (s, 8H), 3.77 (s, 12H), 3.46 (s, 8H).

[0179] Under an argon atmosphere, the white solid obtained in the previous step (1000 mg, 1.372 mmol) was dissolved in anhydrous dichloromethane (40 mL) and stirred at -78 °C for 1 hour. Subsequently, a solution of BBr3 (1 M in DCM, 6.2 mL, 6.174 mmol) was slowly added dropwise, and then the mixture was stirred at 0 °C for 7 hours. After the reaction was terminated by slowly adding saturated aqueous NaHCO3, the mixture was extracted with ethyl acetate. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The resulting substance formed a precipitate with hexane, and a white solid (551 mg, 60%) was obtained. 1 1H-NMR (400 MHz, DMSO-d6) δ: 8.33 (s, 4H), 6.98 (d, J = 8 Hz, 8H), 6.67 (d, J = 8 Hz, 8H), 3.94 (s, 8H), 3.46 (s, 8H).

[0180] Under an argon atmosphere, the white solid obtained in the previous step (100 mg, 0.149 mmol), 1-bromo-2-methyl-propane (611 mg, 2.470 mmol), and K2CO3 (144 mg, 1.043 mmol) were dissolved in anhydrous DMF (7 mL) and stirred at 110 °C for 24 hours. After cooling to room temperature, the mixture was extracted with dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (developing solvent = ethyl acetate:hexane = 1:3 by volume ratio), and a viscous liquid product (73 mg, 54%) was obtained. 1 1H-NMR (400 MHz, CDCl3) δ: 7.07 (d, J = 8 Hz, 8H), 6.81 (d, J = 8 Hz, 8H), 3.93 (s, 8H), 3.67 (d, J = 8 Hz, 8H), 3.45 (s, 12H), 2.09 - 2.02 (m, 4H), 1.01 (d, J = 4 Hz, 24H).

[0181] Under an argon atmosphere, the liquid obtained in the previous step (73 mg, 0.081 mmol) and p-ABSA (74 mg, 0.486 mmol) were dissolved in anhydrous acetonitrile (5 mL) and stirred for 10 minutes. DBU (117 mg, 0.486 mmol) was gradually added dropwise to the solution, and then the mixture was stirred at room temperature for 24 hours. Subsequently, extraction was performed using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (developing solvent = ethyl acetate:hexane = 1:5 by volume). The obtained substance was recrystallized using dichloromethane and methanol to obtain crosslinkable compound 4 as an orange solid (9 mg, 11%). 1 1H-NMR (400 MHz, CDCl3) δ: 7.29 (d, J = 8 Hz, 8H), 6.90 (d, J = 8 Hz, 8H), 4.34 (s, 8H), 3.70 (d, J = 4 Hz, 8H), 2.10 - 2.03 (m, 4H), 1.02 (d, J = 4 Hz, 24H).

[0182] (5) Production of Crosslinkable Compound 5 A mixed solution of 4-fluorophenylacetyl chloride (1267 mg, 7.345 mmol) and pentaerythritol (200 mg, 1.469 mmol) was stirred at 140 °C for 18 hours. After cooling to room temperature, extraction was performed using ethyl acetate and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (developing solvent = ethyl acetate:hexane = 1:2 by volume) to obtain a white solid (806 mg, 81%). 1 1H-NMR (400 MHz, CDCl3) δ: 7.14 (dd, J = 8 Hz, 4 Hz, 8H), 6.99 (t, J = 8 Hz, 8H), 3.93 (s, 8H), 3.51 (s, 8H).

[0183] Under an argon atmosphere, the white solid (400 mg, 0.588 mmol) obtained in the previous step and p-ABSA (1019 mg, 4.114 mmol) were dissolved in anhydrous acetonitrile (10 mL) and stirred for 10 minutes. Then, DBU (626 mg, 2.470 mmol) was gradually added dropwise, and the mixture was stirred at room temperature for 24 hours. Subsequently, extraction was performed using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (developing solvent = dichloromethane). The obtained substance was recrystallized using chloroform and methanol to obtain crosslinkable compound 5 as an orange solid (78 mg, 17%). 1 1H-NMR (400 MHz, CDCl3) δ: 7.38 (t, J = 8 Hz, 8H), 7.08 (t, J = 8 Hz, 8H), 4.38 (s, 8H).

[0184] (6) Production of Crosslinkable Compound 6 Under an argon atmosphere, a mixed solution of phenylacetyl chloride (7636 mg, 49.40 mmol) and D-mannitol (1000 mg, 5.489 mmol) was stirred at 130 °C for 24 hours. After cooling to room temperature, extraction was performed using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (developing solvent = ethyl acetate:hexane = 1:5 by volume ratio) to obtain a pale yellow liquid (1177 mg, 24%). 1 1H-NMR (400 MHz, CDCl3) δ: 7.32 - 7.19 (m, 30H), 5.46 (d, J = 8 Hz, 2H), 5.11 - 5.07 (m, 2H), 4.20 (s, 1H), 4.19 (s, 1H), 3.88 (d, J = 4 Hz, 1H), 3.85 (d, J = 4 Hz, 1H), 3.60 (d, J = 4 Hz, 4H), 3.54 (d, J = 4 Hz, 4H), 3.50 (s, 4H).

[0185] Under an argon atmosphere, the pale yellow liquid (1157 mg, 1.299 mmol) obtained in the previous step and p-ABSA (2808 mg, 11.69 mmol) were dissolved in anhydrous acetonitrile (50 mL) and stirred for 10 minutes. Then, DBU (1780 mg, 11.69 mmol) was gradually added dropwise, and the mixture was stirred at room temperature for 24 hours. Subsequently, extraction was performed using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (developing solvent = dichloromethane). The obtained substance was recrystallized using chloroform and methanol to obtain crosslinkable compound 6 as a yellow solid (279 mg, 21%). 1 1H-NMR (400 MHz, CDCl3) δ: 7.40 - 7.14 (m, 30H), 5.81 (d, J = 8 Hz, 2H), 5.49 (m, 2H), 4.70 (d, J = 12 Hz, 2H), 4.35 (dd, J = 12 Hz, 4 Hz, 2H).

[0186] (7) Production of Crosslinkable Compound 7 A mixed solution of 4-fluorophenylacetyl chloride (1010 mg, 5.852 mmol) and dipentaerythritol (250 mg, 0.836 mmol) was stirred at 120 °C for 18 hours. After cooling to room temperature, extraction was performed using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (developing solvent = ethyl acetate:hexane = 1:2 by volume ratio) to obtain a white solid (710 mg, 79%). 1 1H-NMR (400 MHz, CDCl3) δ: 7.17 (t, J = 4 Hz, 4 Hz, 12H), 6.99 (t, J = 4 Hz, 12H), 3.92 (s, 12H), 3.52 (s, 12H), 2.94 (s, 4H).

[0187] Under an argon atmosphere, the white solid (400 mg, 0.374 mmol) obtained in the previous step and p-ABSA (897 mg, 3.735 mmol) were dissolved in anhydrous acetonitrile (10 mL) and stirred for 10 minutes. Then, DBU (568 mg, 3.735 mmol) was gradually added dropwise, and the mixture was stirred at room temperature for 24 hours. Next, extraction was performed using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (developing solvent = chloroform:hexane = 30:1 by volume ratio). The obtained substance was recrystallized using chloroform and hexane to obtain crosslinkable compound 7 as an orange solid (160 mg, 35%). 1 1H-NMR (400 MHz, CDCl3) δ: 7.34 (t, J = 4 Hz, 12H), 7.03 (t, J = 8 Hz, 12H), 4.34 (s, 12H), 3.46 (s, 4H).

[0188] Production Example 1: Production of Quantum Dot Ink Composition (1) Production of Red Quantum Dot Ink Composition Zinc oleate (0.5 M, Zn(OA)2) was prepared by heating 20 mmol of Zn(OAc)2 with 12 ml of OA at 150 °C for 1 hour, and then diluting this with ODE to a total volume of 40 ml. Trioctylphosphine selenide (1 M, TOPSe) and trioctylphosphine sulfur (1 M, TOPS) were prepared by stirring 1 mmol of Se or S with 1 ml of TOP at room temperature overnight.

[0189] For red-emitting CdSe / ZnSe / ZnS quantum dots (r = 3.0 nm, l = 5.0 nm, h = 2.0 nm), 0.3 mmol of CdO, 1 mmol of OA, and 6 ml of ODE were placed in a three-neck flask and heated to 300 °C under inert conditions to form a clear Cd(OA)2 solution. Subsequently, 0.5 ml of TOPSe (1 M) was quickly injected into the reaction flask. After 3 minutes, 5 ml of a Cd, Se stock solution in ODE was injected to grow the CdSe core. Then, 20 ml of Zn(OA)2 (0.5 M) and 7 ml of TOPSe were continuously added to grow the ZnSe shell. Finally, 10 ml of Zn(OA)2 (0.5 M) and 5 ml of TOPS were added to grow the ZnS shell. The synthesized red-emitting CdSe / ZnSe / ZnS quantum dots were purified 5 times by the precipitation / redispersion (ethanol / toluene) method.

[0190] Compound 1 was added to a red-emitting CdSe / ZnSe / ZnS quantum dot solution dissolved in toluene (55 mg / mL) at 5 wt% based on the quantum dots to produce a red quantum dot ink composition.

[0191] (2) Synthesis of Green Quantum Dot Ink Composition Green-emitting InP / ZnSeS quantum dots were purchased from Uniam.

[0192] Compound 1 was added to a green-emitting InP / ZnSeS quantum dot solution dissolved in toluene (55 mg / mL) at 5 wt% based on the quantum dots to produce a green quantum dot ink composition.

[0193] (3) Synthesis of Blue Quantum Dot Ink Composition Zn(OA)2 (0.5 M) stock solution was prepared as the cation precursor for ODE. TOPSe (2 M), trioctylphosphine telluride (0.05 M, TOPTe), and diphenylphosphine selenide (0.2 M, DPPSe) were prepared as the anion precursors. For the preparation of Zn(OA)2, 50 mmol of Zn(Ac)2 and 100 mmol of OA were placed in a flask, degassed at 130 °C for 6 h, refilled with N2 gas, and then diluted to 0.5 M concentration with ODE. For the preparation of TOPSe, 100 mmol of Se powder was mixed with 50 mL of TOP at 160 °C for 5 h under inert conditions. TOPTe was prepared by the same method.

[0194] 4 mmol of Se powder was reacted with 2 mL of DPP at 200 °C under inert conditions until the reaction was complete, and then diluted to 0.2 M concentration with toluene at RT to prepare DPPSe.

[0195] ZnSeTe / ZnSe / ZnS quantum dots (r = 1.8 nm, l = 1.8 nm, h = 0.6 nm) were synthesized with a slight modification of the previously reported method (1). 1.2 mL of Zn(OA)2 (0.5 M) and 10 mL of ODE were placed in a three-neck round-bottom flask, stirred and degassed at 110 °C. After degassing for 1 h to completely remove water and oxygen, it was refilled with N2 gas. Then, a mixture of 1.43 mL of DPPSe (0.2 M) and 0.3 mL of TOPTe (0.05 M) was injected to synthesize the ZnSe 0.95 Te 0.05 core and maintained for 30 min. Then, the temperature was raised to 300 °C for 15 min to grow the ZnSe 0.95 Te 0.05 core (r = 1.8 nm) completely. To further grow a ZnSe shell on the core, 2 mL / 3.4 mL / 5 mL of Zn(OA)2 (0.5 M) and 0.25 mL / 0.425 mL / 0.625 mL of TOPSe (2 M) were sequentially injected at 300 °C. 10 mL of Zn(OA)2 (0.5 M) and 0.5 mL of DDT were further injected to grow a 0.6 nm thick ZnS shell. The synthesized quantum dots were purified twice by the precipitation / redispersion (ethanol / toluene) method.

[0196] Compound 1 was added to a blue-emitting ZnSeTe / ZnSe / ZnS quantum dot solution dissolved in toluene (55 mg / mL) at 20 wt% with respect to the quantum dots to produce a blue quantum dot ink composition.

[0197] Example 1: Production of Quantum Dot Pattern Film Using PIN Photopatterning The quantum dot pattern film according to one embodiment is manufactured by the following method with reference to FIG. 1.

[0198] (1) Formation of Photoresist Pattern (PR pattern) The substrate was washed in an ultrasonic bath filled with acetone and isopropyl alcohol for 10 minutes each, and then dried with a nitrogen gun. KL5301 photoresist (manufactured by Kemlab Incorporation) was coated on the SiO2 substrate in a multi-stage spin coating process (500 rpm for 5 seconds, 4500 rpm for 40 seconds, 2,000 rpm for 2 seconds), and then the resulting film was soft-baked on a hot plate at 105 °C for 1 minute. After soft baking, the photoresist film was irradiated through a photomask with a UV light source (365 nm, 9.8 mW / cm 2 ) for 9 seconds using a mask aligner (MDA-400LJ, MIDAS system), and then hard-baked on a hot plate at 115 °C for 1 minute. The hard-baked photoresist film was developed with AZ300MIF developer (manufactured by AZ Electronic Materials) for 4 seconds and then rinsed with deionized water. The thickness of the resulting photoresist pattern was 70 nm.

[0199] (2) Formation of CdSe / ZnSe / ZnS Quantum Dot Pattern The red quantum dot ink composition (QD ink) was spin-coated (4,000 rpm, 30 seconds) on the substrate on which the photoresist pattern was formed, and the resulting film was annealed at 110 °C for 20 minutes to induce a cross-linking reaction. Subsequently, the photoresist pattern was stripped in an ultrasonic bath filled with acetone for 1 minute, dried using a nitrogen gun, and a 70-nm-thick CdSe / ZnSe / ZnS quantum dot pattern (QD pattern) was formed.

[0200] Comparative Example 1: Production of Quantum Dot Pattern Film Using Direct Photopatterning A mixed solution in which Compound 1 (5 wt% with respect to the quantum dots) was added to a red-emitting CdSe / ZnSe / ZnS quantum dot solution dissolved in toluene (60 mg / mL) was spin-coated on the substrate (60 seconds at 2,000 rpm, a 25-nm-thick quantum dot pattern, 30 seconds at 4,000 rpm) to obtain a 70-nm thickness. The resulting film was cross-linked with UV (365 nm, 4 mW / cm 2 , corresponding exposure 4.8 J / cm 2 ). Subsequently, the uncross-linked regions were selectively removed using a toluene solvent, and the quantum dot pattern film of Comparative Example 1 in which a red quantum dot pattern was formed was developed.

[0201] Evaluation Example 1 Photographs and height profiles of the quantum dot pattern films produced in each of Example 1 and Comparative Example 1 were observed with an atomic force microscope (AFM) and are shown in Figure 2.

[0202] In addition, five or more quantum dot pattern films were produced in each of Example 1 and Comparative Example 1, and their line edge roughness, line width variation, and surface roughness were measured, and the results are shown in Figure 3. In each graph of Figure 3, the values on the vertical axis are average values, and the error bars indicate the standard deviation.

[0203] Referring to FIGS. 2 and 3, it can be seen that the quantum dot pattern film according to one embodiment has significantly reduced line edge roughness, line width variation, and surface roughness compared to the quantum dot pattern film of the comparative example, and is very excellent in pattern fidelity.

[0204] Example 2: Production of Multicolor Quantum Dot Pattern Film The quantum dot pattern film according to one embodiment is also manufactured into a multicolor quantum dot pattern film by the following method with reference to FIG. 4.

[0205] (1) First, the red-emitting CdSe / ZnSe / ZnS quantum dot ink composition was patterned through the method described in Example 1 to form a red quantum dot pattern (Red pattern).

[0206] (2) Then, a photoresist pattern, which is a reverse pattern of the green quantum dot pattern, was formed (PR patterning) on the substrate with the red-emitting CdSe / ZnSe / ZnS quantum dot pattern, and reactive ion etching was performed to reduce the thickness. Since the red-emitting CdSe / ZnSe / ZnS quantum dot pattern was covered with a photoresist layer, it was possible to prevent direct exposure to the plasma during the etching step.

[0207] (3) Then, using the green-emitting InP / ZnSeS quantum dot ink composition (QD ink), patterning (Green spin-coating, Annealing, and Lift-off) was performed in the same manner as in (1) to form a red and green quantum dot pattern (RG pattern).

[0208] (4) Then, using the blue-emitting ZnSeTe / ZnSe / ZnS quantum dot ink composition, the processes of (2) and (3) were repeated (Repeat) for patterning to form a red (R), green (G), and blue (B) quantum dot pattern (RGB pattern).

[0209] Evaluation Example 2 The quantum dot pattern film produced in Example 2 was observed with a fluorescence microscope, and the results are shown in FIG. 5.

[0210] In addition, a photograph and a height profile of the quantum dot film produced in Example 2 observed by AFM (atomic force microscopy) are shown in FIG. 6.

[0211] Referring to FIGS. 5 and 6, it can be seen that the RGB quantum dots in the quantum dot pattern film according to one embodiment are all formed with excellent fidelity.

[0212] Example 3: Fabrication of Red Light - Emitting Device The pre-patterned ITO substrate was washed in an ultrasonic bath containing deionized water, acetone, and isopropyl alcohol for 10 minutes each, and then dried using a nitrogen gun. The entire QD-LED fabrication was performed under inert conditions.

[0213] 20 mg / mL of ZnO nanoparticles were spin-coated on the pre-patterned ITO substrate at 4000 rpm for 30 seconds, and then the film was annealed at 80 °C for 30 minutes. After adding 5 wt% of Compound 1 to 15 mg / mL of red-emitting CdSe / ZnSe / ZnS QDs, it was spin-coated on the ZnO nanoparticles at 4000 rpm for 30 seconds, and the formed QD film was annealed at 110 °C for 20 minutes. CBP (60 nm), MoO x (10 nm), and Al (120 nm) were thermally evaporated onto the QD film at evaporation rates of 0.4 Å / s to 1.0 Å / s, 0.1 Å / s to 0.2 Å / s, and 1.0 Å / s to 2.0 Å / s, respectively, at a pressure of ~10 -7 torr to fabricate a red-emitting device.

[0214] [Chemical formula]

[0215] Example 4: Fabrication of Green Light - Emitting Device A green light-emitting device was fabricated in the same manner as in Example 3, except that 15 mg / mL of green light-emitting InP / ZnSeS QDs were used instead of 15 mg / mL of red light-emitting CdSe / ZnSe / ZnS QDs during the formation of the QD film.

[0216] Example 5: Fabrication of Blue Light - Emitting Device A blue light-emitting device was fabricated in the same manner as in Example 3, except that 10 mg / mL of blue light-emitting ZnSeTe / ZnSe / ZnS QDs were used instead of 15 mg / mL of red light-emitting CdSe / ZnSe / ZnS QDs during the formation of the QD film.

[0217] Comparative Examples 2 - 4 A red light-emitting device, a green light-emitting device, and a blue light-emitting device were respectively fabricated in the same manner as in Examples 3 to 5, except that Compound 1 was not used during the formation of the QD film.

[0218] Evaluation Example 3: Evaluation of Light - Emitting Device Characteristics The emission spectra, current density, luminance, and external quantum efficiency (EQE) of the light-emitting devices fabricated in Examples 3 to 5 and Comparative Examples 2 to 4 were measured using Keithley MU 236 and a luminance meter PR650, respectively, and the results are shown in FIGS. 9 to 12.

[0219] Referring to FIG. 9, it can be seen that the emission spectra of the light-emitting devices of Examples 3 to 5 ("Crosslinked") are hardly distinguishable from those of the light-emitting devices of Comparative Examples 2 to 4 ("Pristine").

[0220] Also, referring to FIGS. 10 to 12, it can be seen that the current density (J)-voltage (V)-luminance (L) profiles and external quantum efficiency (EQE)-J profiles of the light-emitting devices of Examples 3 to 5 ("Crosslinked") are very similar to those of the light-emitting devices of Comparative Examples 2 to 4 ("Pristine").

[0221] From this, it can be seen that the use of the low-temperature activating crosslinking agent does not deteriorate the electrical and optoelectronic properties of the QD layer, and the photopatterning process using the colloidal particle ink composition according to one embodiment is non-destructive.

[0222] Although the present invention has been described with reference to the above embodiments, these are merely illustrative, and those having ordinary knowledge in the technical field to which the present invention pertains will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true technical protection scope of the present invention must be determined by the technical idea of the claims.

Claims

1. A colloidal particle ink composition comprising colloidal particles and a low-temperature activatable crosslinking agent.

2. The colloidal particle ink composition according to claim 1, wherein the colloidal particles comprise semiconductor nanocrystals and organic ligands bonded to the surface of the nanocrystals.

3. The colloidal particle ink composition according to claim 2, wherein the semiconductor nanocrystals comprise a core and a shell covering at least a part of the core.

4. The colloidal particle ink composition according to claim 2, wherein the semiconductor nanocrystals comprise a III-VI group semiconductor compound; a II-VI group semiconductor compound; a III-V group semiconductor compound; a III-VI group semiconductor compound; a I-III-VI group semiconductor compound; a IV-VI group semiconductor compound; a Group IV compound; or any combination thereof.

5. wherein the organic ligand is C ４ -C ３０ The colloidal particle ink composition according to claim 2, comprising a fatty acid or a derivative thereof.

6. The colloidal particle ink composition according to claim 1, wherein the low-temperature activatable crosslinking agent is thermally activated at a temperature of 0°C to 130°C or activated by ultraviolet light of 200 nm to 380 nm to generate an intermediate.

7. The colloidal particle ink composition according to claim 1, wherein the low-temperature activatable crosslinking agent is a compound containing a diazo group.

8. The colloidal particle ink composition according to claim 1, wherein the low-temperature activatable crosslinking agent is a compound represented by the following Chemical Formula 1: 【Chemical 1】 In the Chemical Formula 1, L １ and L ２ are, independently of each other, a single bond or a C １ -alkylene group which is substituted or unsubstituted with at least one R １ -C ３０ and is an alkylene group m1 and m2 are independently 1, 2, 3, 4, 5 or 6, Ar １ and Ar ２ is a C １ -C ５ -C ６０ carbocyclic group which is substituted or unsubstituted with at least one R １ or a C １ -C ６０ heterocyclic group which is substituted or unsubstituted with at least one R n1 and n2 are independently 0, 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10, and the sum of n1 and n2 is 2 or more. Q １ ~Q ３ are, independently of each other, a single bond, O, S, C, C(R ２ ), C(R ２ )(R ３ ), or a C １ -C １ -C ３０ alkylene group which is substituted or unsubstituted with at least one R X １ and X ２ are, independently of each other, O, S, Se, N(R ４ ), C(R ４ )(R ５ ), and R １ to R ５ are, independently of one another, hydrogen, deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, C １ -C ３０ alkyl group, C ２ -C ３０ alkenyl group, C ２ -C ３０ alkynyl group, C １ -C ３０ alkoxy group, C １ -C ３０ alkylthio group, C ５ -C ６０ carbocyclic group, C １ -C ６０ heterocyclic group, or -Si(Q １１ )(Q １２ )(Q １３ ) and Q １１ to Q １３ are, independently of one another, hydrogen, deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, C １ -C ３０ an alkyl group, C ２ -C ３０ an alkenyl group, C ２ -C ３０ an alkynyl group, C １ -C ３０ an alkoxy group, or C １ -C ３０ an alkylthio group.

9. The colloidal particle ink composition according to claim 8, wherein the low-temperature activatable crosslinking agent is a compound represented by the following Chemical Formula 2: 【Chemical 2】 In the Chemical Formula 2, L １ 、L ２ 、m1, m2, n1, n2, X １ 、X ２ 、and Q １ ~Q ３ The description related to is the same as the description in claim 8, R １１ ~R １５ and R ２１ ~R ２５ The descriptions related to R １ are, independently of each other, the same as the description related to R in claim 8.

10. The colloidal particle ink composition according to claim 1, wherein the low-temperature activatable crosslinking agent is one or more selected from the following Compounds 1 to 7: 【Chemical 3】 【Chemical Formula 4】 [Chemical Formula 5]

11. A method for forming a colloidal particle pattern using the colloidal particle ink composition according to any one of claims 1 to 10.

12. Applying a first colloidal particle ink composition comprising first colloidal particles and a first low-temperature activatable crosslinking agent onto a first photoresist pattern; Annealing the applied first colloidal particle ink composition at a temperature of 0°C to 130°C; Removing the first photoresist pattern to form a first colloidal particle pattern, the method for forming a colloidal particle pattern according to claim 11.

13. The method for forming a colloidal particle pattern according to claim 12, wherein the ratio of the thickness of the first photoresist pattern to the thickness of the first colloidal particle pattern is 1:1 to 1:0.

7.

14. The method for forming a colloidal particle pattern according to claim 12, further comprising reducing the thickness of the first photoresist pattern and / or the first colloidal particle pattern by plasma etching.

15. Forming a second photoresist pattern on the first colloidal particle pattern, Coating a second colloidal particle ink composition containing second colloidal particles and a second low-temperature activating crosslinking agent on the second photoresist pattern, Annealing the coated second colloidal particle ink composition at a temperature of 0°C to 130°C, Removing the second photoresist pattern to form a second colloidal particle pattern, including The method for forming a colloidal particle pattern according to claim 12, wherein the first colloidal particles and the second colloidal particles exhibit different hues from each other.

16. A colloidal particle pattern film formed using the colloidal particle ink composition according to any one of claims 1 to 10.

17. The colloidal particle pattern film includes a substrate and a colloidal particle pattern formed on the substrate, The colloidal particle pattern film according to claim 16, wherein the thickness of the colloidal particle pattern is 1 nm to 50 nm.

18. An electronic device including a colloidal particle pattern formed using the colloidal particle ink composition according to any one of claims 1 to 10.

19. The electronic device according to claim 18, wherein the electronic device is a thin film transistor (TFT), an electrochromic device (EC), a light emitting diode (LED), a solar cell, or a photodiode.

20. The electronic device is a colloidal particle light emitting device, The colloidal particle light-emitting device includes a first electrode, a second electrode facing the first electrode, and an intermediate layer including a light-emitting layer disposed between the first electrode and the second electrode, The electronic device according to claim 18, wherein the light-emitting layer includes the colloidal particle pattern.

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