Substrate processing apparatus and substrate processing method

Abstract

To enhance an in-plane uniformity of a temperature of a substrate while reducing the amount of a chemical solution used.SOLUTION: A substrate processing apparatus includes: a substrate holding part that holds a substrate having a first surface and a second surface in a horizontal posture; a rotation driving part that rotates the substrate holding part and the substrate held by the substrate holding part about a vertical axis; a first fluid supply part that supplies a fluid to the first surface of the substrate held by the substrate holding part; a second fluid supply part that supplies the fluid to the second surface of the substrate held by the substrate holding part; and a control part. The control part controls the rotation driving part, the first fluid supply part, and the second fluid supply part to execute: a pretreatment step of supplying the heated fluid to the second surface of the substrate while rotating the substrate at a first rotation speed and supplying a prewetting liquid to the first surface of the substrate; and a chemical liquid treatment step of supplying a chemical liquid to the first surface of the substrate while intermittently supplying the heated fluid to the second surface of the substrate while rotating the substrate at a second rotation speed after the pretreatment step to perform the chemical liquid treatment on the first surface.SELECTED DRAWING: Figure 6

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] In the manufacture of semiconductor devices, wet chemical processing such as wet etching and chemical solution cleaning of a substrate is performed by supplying a chemical solution to the surface of the substrate while rotating the substrate by a spin chuck. In order to equalize the temperature distribution of the substrate to improve the in-plane uniformity of the chemical solution processing, a temperature control liquid is supplied to the back surface of the substrate (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of improving the in-plane uniformity of the temperature of a substrate while reducing the usage amount of a chemical solution.

Means for Solving the Problems

[0005] According to an embodiment of the present disclosure, a substrate holding unit that holds a substrate having a first surface and a second surface in a horizontal posture, a rotation driving unit that rotates the substrate holding unit and the substrate held by the substrate holding unit around a vertical axis, a first fluid supply unit that supplies fluid to the first surface of the substrate held by the substrate holding unit, a second fluid supply unit that supplies fluid to the second surface of the substrate held by the substrate holding unit, and a control unit, wherein the control unit controls the rotation driving unit, the first fluid supply unit, and the second fluid supply unit to supply heated fluid to the second surface of the substrate while rotating the substrate at a first rotation speed and supply a pre-wetting liquid to the first surface of the substrate, and a chemical liquid treatment step of supplying a chemical liquid to the first surface of the substrate while intermittently supplying the heated fluid to the second surface of the substrate while rotating the substrate at a second rotation speed to perform a chemical liquid treatment on the first surface. A substrate processing apparatus is provided that causes the above steps to be executed.

Advantages of the Invention

[0006] According to the above embodiment, it is possible to improve the in-plane uniformity of the temperature of the substrate while reducing the amount of chemical liquid used.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Embodiments for Carrying Out the Invention

[0008] An embodiment of a substrate processing apparatus will be described with reference to the accompanying drawings.

[0009] FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment. Hereinafter, in order to clarify the positional relationship, an X-axis, a Y-axis, and a Z-axis that are orthogonal to each other are defined, and the positive direction of the Z-axis is the vertically upward direction.

[0010] As shown in FIG. 1, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

[0011] The loading / unloading station 2 includes a carrier placement unit 11 and a transfer unit 12. A plurality of carriers C for horizontally accommodating a plurality of substrates, semiconductor wafers (hereinafter referred to as wafers W) in the present embodiment, are placed on the carrier placement unit 11.

[0012] The transfer unit 12 is provided adjacent to the carrier placement unit 11 and includes a substrate transfer device 13 and a delivery unit 14 inside. The substrate transfer device 13 includes a wafer holding mechanism for holding the wafer W. Further, the substrate transfer device 13 can move in the horizontal and vertical directions and turn around the vertical axis, and transfers the wafer W between the carrier C and the delivery unit 14 using the wafer holding mechanism.

[0013] The processing station 3 is provided adjacent to the transfer unit 12. The processing station 3 includes a transfer unit 15 and a plurality of processing units 16. The plurality of processing units 16 are arranged side by side on both sides of the transfer unit 15.

[0014] The transfer unit 15 includes a substrate transfer device 17 therein. The substrate transfer device 17 includes a wafer holding mechanism for holding the wafer W. Further, the substrate transfer device 17 is capable of moving in the horizontal and vertical directions and turning about a vertical axis, and transfers the wafer W between the delivery unit 14 and the processing unit 16 using the wafer holding mechanism.

[0015] The processing unit 16 performs predetermined substrate processing on the wafer W transferred by the substrate transfer device 17.

[0016] Also, the substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer, and includes an arithmetic processing unit 18 and a storage unit 19. Programs for controlling various processes executed in the substrate processing system 1 are stored in the storage unit 19. The arithmetic processing unit 18 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the storage unit 19.

[0017] Note that such a program may be recorded on a computer-readable storage medium and installed from the storage medium into the storage unit 19 of the control device 4. Examples of computer-readable storage media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, and the like.

[0018] In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C placed on the carrier placement unit 11 and places the taken-out wafer W on the delivery unit 14. The wafer W placed on the delivery unit 14 is taken out from the delivery unit 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16.

[0019] The wafer W carried into the processing unit 16 is processed by the processing unit 16 and then carried out from the processing unit 16 by the substrate transfer device 17 and placed on the delivery unit 14. Then, the processed wafer W placed on the delivery unit 14 is returned to the carrier C on the carrier placement unit 11 by the substrate transfer device 13.

[0020] Next, the configuration of the processing unit 16 will be described with reference to FIG. 2.

[0021] The processing unit 16 includes a chamber 20, a substrate holding and rotating mechanism 30, a first processing fluid supply unit (first fluid supply unit) 40, a second processing fluid supply unit (second fluid supply unit) 50, and a liquid receiving cup 60.

[0022] The chamber 20 houses the substrate holding and rotating mechanism 30 and the liquid receiving cup 60. An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20. The FFU 21 forms a downflow in the chamber 20.

[0023] The substrate holding and rotating mechanism 30 includes a substrate holding portion 31, a support column portion 32, and a rotation driving portion 33. The substrate holding portion 31 is configured as a mechanical chuck having a disk-shaped base 31a and a plurality of gripping claws 31b provided at intervals in the circumferential direction on the outer peripheral edge of the base 31a. The substrate holding portion 31 horizontally holds the wafer W by the gripping claws 31b. When the gripping claws 31b grip the substrate, a gap is formed between the upper surface of the base 31a and the lower surface of the wafer W.

[0024] The support column portion 32 is a hollow member extending in the vertical direction. The upper end of the support column portion 32 is connected to the base 31a. By rotating the support column portion 32 by the rotation driving portion 33, the substrate holding portion 31 and the wafer W held thereon rotate around the vertical axis.

[0025] The liquid receiving cup 60 is arranged so as to surround the substrate holding portion 31. The liquid receiving cup 60 collects the processing liquid scattered from the wafer W held and rotated by the substrate holding portion 31. A drain port 61 is formed at the bottom of the liquid receiving cup 60. The processing liquid collected by the liquid receiving cup 60 is discharged from the drain port 61 to the outside of the processing unit 16. An exhaust port 62 is formed at the bottom of the liquid receiving cup 60. The internal space of the liquid receiving cup 60 is sucked through the exhaust port 62. The gas supplied from the FFU 21 is drawn into the inside of the liquid receiving cup 60 and then discharged to the outside of the processing unit 16 through the exhaust port 62.

[0026] The first processing fluid supply unit 40 supplies various processing fluids (liquids, gases, gas-liquid mixed fluids, etc.) to the upper surface of the wafer W held by the substrate holding portion 31 (usually the surface of the wafer W on which the device is formed). The first processing fluid supply unit 40 has a plurality of surface nozzles 41 that discharge the processing fluid toward the upper surface (first surface) of the wafer W. The number of surface nozzles 41 is provided as many as required for performing the processing executed in the processing unit 16. Five surface nozzles 41 are depicted in FIG. 2, but the number is not limited to this.

[0027] The first processing fluid supply unit 40 has one or more (two in the illustrated example) nozzle arms (nozzle moving mechanisms) 42. Each nozzle arm 42 carries at least one of the plurality of surface nozzles 41. Each nozzle arm 42 can move the carried surface nozzle 41 between a position substantially directly above the rotation center of the wafer W (processing position) and a retracted position outside the upper end opening of the liquid receiving cup 60. The nozzle arm 42 may be of a type that pivots about a pivot axis or of a type that performs a translational movement.

[0028] To each of the surface nozzles 41, a processing fluid is supplied from a corresponding processing fluid supply mechanism 43 (which forms part of the first processing fluid supply section 40). The processing fluid supply mechanism 43 can be composed of a processing fluid supply source such as a tank, a cylinder, or a factory power source, a supply pipeline for supplying the processing fluid from the processing fluid supply source to the surface nozzles 41, an on-off valve provided in the supply pipeline, and a flow rate regulating device such as a flow rate control valve. In order to discharge the processing fluid (especially the processing liquid) staying in the surface nozzles 41 and the supply pipeline in the vicinity thereof, a drain pipeline can be connected to the supply pipeline. Such a processing fluid supply mechanism 43 is widely known in the technical field of semiconductor manufacturing apparatuses, and the illustration of the structure and the detailed description thereof are omitted. A liquid receiver (not shown) is provided in the processing unit 16 so that dummy dispensing is possible when each surface nozzle 41 is in the retracted position.

[0029] The second processing fluid supply section 50 supplies various processing fluids (processing liquids, processing gases, etc.) to the lower surface of the wafer W held by the wafer holding section 31 (usually the back surface of the wafer W on which no device is formed). The second processing fluid supply section 50 has one or more (two in the illustrated example) back surface nozzles 51A, 51B that discharge the processing fluid toward the lower surface (second surface) of the wafer W. As schematically shown in FIG. 2, inside the hollow support column 32, a processing liquid supply pipe 52 extends in the vertical direction. The upper end openings of each of the two flow paths extending in the vertical direction in the processing liquid supply pipe 52 serve as the back surface nozzles 51A, 51B. The processing liquid supply pipe 52 is installed in the support column 32 so as to maintain a non-rotating state even when the wafer holding section 31 and the support column 32 are rotating.

[0030] To the back surface nozzle 51A (heating fluid nozzle), heated DIW (pure water) for temperature adjustment of the wafer W is supplied from a temperature control DIW supply mechanism 53A (which forms part of the second processing fluid supply section 50). The back surface nozzle 51A and the temperature control DIW supply mechanism 53A constitute a supply mechanism for a heating fluid (temperature control fluid). To the back surface nozzle 51B, normal temperature DIW or nitrogen gas or the like may be supplied from a processing fluid supply mechanism 53B.

[0031] In this specification, in order to distinguish from "HDIW" which is heated DIW, DIW at normal temperature (for example, 24 °C) is referred to as "CDIW".

[0032] Next, with reference to FIG. 3, the configuration of the temperature control DIW supply mechanism 53A for the back surface nozzle 51A will be described. The temperature control DIW supply mechanism 53A is provided one by one for each of a plurality of processing units 16 (16-1, 16-2, 16-3,...). The configurations of the respective temperature control DIW supply mechanisms 53A are substantially the same as each other.

[0033] The substrate processing system 1 has an HDIW main pipe 23 connected to a supply source of HDIW and a CDIW main pipe 24 connected to a supply source of CDIW. The main pipes 23 and 24 supply HDIW and CDIW to all of a plurality of processing units 16 provided in one substrate processing system 1. A temperature sensor 25 is provided in the HDIW main pipe 23, and a temperature sensor 26 is provided in the CDIW main pipe 24.

[0034] The supply source of HDIW and the supply source of CDIW are, for example, the factory power of a semiconductor device manufacturing factory where the substrate processing system 1 is installed. Alternatively, the supply source of HDIW may be a tank for storing HDIW provided as a component of the substrate processing system 1.

[0035] The temperature control DIW supply mechanism 53A has a main pipe 531 (heating fluid line) branched from the HDIW main pipe 23. In the main pipe 531, a flow meter 532, a constant pressure valve 533, an on-off valve 534, a first confluence point 535, a second confluence point 536, a first branch point 537, an on-off valve 538, and a second branch point 539 are provided in order from the upstream side. The downstream end of the main pipe 531 is connected to the back surface nozzle 51A through a flow path in the processing liquid supply pipe 52.

[0036] The flowmeter 532 and the constant pressure valve 533 constitute a flow rate adjustment unit that adjusts the flow rate of HDIW flowing through the main pipe 531. The constant pressure valve 533 has a pilot port (details not shown). The constant pressure valve 533 operates so that a secondary pressure corresponding to the operating pressure (air pressure) supplied to the pilot port from a pneumatic regulator (not shown) is realized. The operating pressure supplied to the pilot port of the constant pressure valve 533 is feedback-controlled by a control device (the control device 4 in FIG. 1 or its subordinate controller) so that the detected flow rate of the flowmeter 532 becomes a desired value (set value).

[0037] The DIW supply mechanism 53A for temperature adjustment further has a dilution liquid pipeline 540 branched from the CDIW main pipe 24. The dilution liquid pipeline 540 branches into a first branched dilution liquid pipeline 542 for large flow rates and a second branched dilution liquid pipeline 543 for small flow rates at the branch point 541. A throttle 544 and an on-off valve 545 are provided in the first branched dilution liquid pipeline 542. A throttle 546 and an on-off valve 547 are provided in the second branched dilution liquid pipeline 543. In the illustrated example, the throttles 544 and 546 are configured as orifices with check valves (fixed throttles). The first branched dilution liquid pipeline 542 and the second branched dilution liquid pipeline 543 are respectively connected to the main pipe 531 at the first confluence point 535 and the second confluence point 536. When it is not necessary to greatly change the mixing ratio of CDIW and HDIW, the dilution liquid pipeline 540 may be connected to the main pipe 531 without branching. In this case, the configuration is such that the second branched dilution liquid pipeline 543, the throttle 546, and the on-off valve 547 are removed from the configuration of FIG. 3.

[0038] A flowmeter 548 and a constant pressure valve 549 are provided upstream of the branch point 541 of the dilution liquid pipeline 540. The flowmeter 548 and the constant pressure valve 549 have the same configuration and operation as the flowmeter 532 and the constant pressure valve 533.

[0039] At the first branch point 537, a first drain line 550 branches from the main pipe 531. In the first drain line 550, an on-off valve 551, a temperature sensor 552, and a throttle 553 (an orifice with a check valve (fixed throttle) in the illustrated example) are provided in order from the upstream side.

[0040] At the second branch point 539, the second drain line 554 branches off from the main pipe 531. The second drain line 554 is provided with a shut-off valve 555 and a throttle 556 (an orifice with a check valve (fixed throttle) in the illustrated example) in order from the upstream side.

[0041] A temperature sensor 557 is provided on the downstream side of the second branch point 539 of the main pipe 531.

[0042] When the supply sources of HDIW and CDIW are for factory use, the temperature of the HDIW flowing through the HDIW main pipe 23 is, for example, 70°C, and the temperature of the CDIW flowing through the CDIW main pipe 24 is, for example, 24°C. Since this temperature varies somewhat due to factors such as the outside air temperature and fluctuations in the clean room temperature, it is monitored by the temperature sensors 25 and 26.

[0043] As will be described later, for the main purpose of adjusting the temperature of the wafer W, temperature control HDIW is supplied from the back nozzle 51A to the back surface of the wafer W. The temperature control DIW supply mechanism 53A can supply only HDIW or a mixture of HDIW and CDIW from the back nozzle 51A to the back surface of the wafer W. The temperature of the DIW supplied from the back nozzle 51A to the wafer W can be adjusted by changing the mixing ratio of HDIW and CDIW (the ratio of the flow rate of HDIW flowing into the main pipe 531 to the flow rate of CDIW flowing into the main pipe 531 via the dilution liquid pipelines 540 (542, 543)). In an example of the process described later, 65°C HDIW is supplied from the back nozzle 51A to the wafer W.

[0044] The first drain line 550 is used for an operation (also called "flush" or "dummy dispense") to discard the DIW without supplying it to the wafer W until the temperature stabilizes.

[0045] The second drain line 554 is used to discard the DIW remaining in the back surface nozzle 51A, the flow path in the processing liquid supply pipe 52 communicating with the back surface nozzle 51A, and the pipelines in the vicinity thereof. Thereby, it is possible to prevent the ejection of un-temperature-controlled DIW immediately after starting the ejection of the temperature control-use DIW from the back surface nozzle 51A.

[0046] Next, an example of the liquid processing performed on the wafer W in the processing unit 16 will be described. The wafer W is held in a horizontal posture by the substrate holding and rotating mechanism 30 so that the surface, which is the surface to be processed, becomes the upper surface, and is rotated around the vertical axis. The rotation of the wafer W continues until a series of steps is completed. Also, the liquid processing shown below can be performed, for example, by the arithmetic processing unit 18 of the control device 4 executing a control program to control the operation of the substrate processing system 1 based on the processing recipe stored in the storage unit 19 of the control device 4.

[0047] Also, in the following, some of the plurality of surface nozzles 41 belonging to the first processing fluid supply unit 40 are appropriately used to supply the processing fluid to the surface (first surface) of the wafer W. Specifically, for example, one surface nozzle 41 is assigned to each of the functional water as the pre-wet liquid, the chemical liquid (organic chemical liquid), and the DIW as the rinse liquid. The surface nozzle 41 for discharging the chemical liquid can be carried by one of the plurality of nozzle arms 42, and the surface nozzle 41 for discharging the pre-wet liquid and the rinse liquid (both may be DIW in some cases) can be carried by another one of the plurality of nozzle arms 42, but it is not limited thereto. The back surface nozzle 51A of the second processing fluid supply unit 50 is used to supply HDIW, which is a fluid for temperature control, to the back surface (second surface) of the wafer W.

[0048] Examples of the chemical liquid used in the processing described below include organic chemical liquids such as TMAH (tetramethylammonium hydroxide), a mixture of TMAH and hydrogen peroxide water, ammonia, SC1 (a mixture of aqueous ammonia and hydrogen peroxide water), choline, and a mixture of choline and hydrogen peroxide water.

[0049] [Dummy Dispensing Process] First, the surface nozzle 41 for discharging the chemical solution (hereinafter also referred to as "chemical solution nozzle 41C") is positioned directly above a dummy dispensing port (not shown) for the organic chemical solution provided outside the liquid receiving cup 60, and dummy dispensing of the chemical solution is performed. As a result, the relatively low-temperature chemical solution that has cooled down while staying in the discharge port of the chemical solution nozzle 41C and the pipe (not shown) connected thereto is replaced by a new relatively high-temperature chemical solution. Thereby, it becomes possible to discharge a chemical solution at a relatively high temperature (here, about 55°C) immediately after the start of discharge onto the wafer W. The dummy dispensing is performed, for example, for 4 seconds at a discharge flow rate of 700 ml / min. The conditions of the dummy dispensing are not limited to this. The temperature of the chemical solution discharged from the chemical solution nozzle 41C onto the wafer W is appropriately selected depending on the type of the chemical solution, the required etching amount, etc., but can be selected, for example, within the range of about 30°C to about 80°C.

[0050] [Pretreatment Process] Next, the surface nozzle 41 for discharging the pre-wet liquid (hereinafter also referred to as "pre-wet nozzle 41P") is positioned directly above the center of the rotating wafer W, and the pre-wet liquid is discharged so as to land on the center of the wafer W. The pre-wet liquid can be DIW (pure water), or functional water in which ammonia is dissolved in DIW (for example, functional water with an ammonia concentration of 10 ppm or less) or functional water in which ozone is dissolved in DIW (for example, functional water with an ozone concentration of 20 ppm or less).

[0051] Simultaneously with or almost simultaneously (for example, about 1 second before or after) the start of discharge of the pre-wet liquid, the discharge of HDIW (heated DIW) as the temperature control liquid from the back surface nozzle 51A is started. The temperature of the HDIW is, for example, about 65°C (not limited to this). The temperature of the HDIW discharged from the back surface nozzle 51A is the same in all processes. However, the temperature of the HDIW may be changed for each process. The temperature of the pre-wet liquid is, for example, room temperature, but heated pre-wet liquid may also be used.

[0052] In the following description, it is assumed that the position of the surface nozzle 41 (the position in the wafer radius direction with respect to the rotation center of the wafer W) and the position of the liquid landing point on the surface of the wafer W of the liquid discharged from the surface nozzle 41 (the position in the wafer radius direction with respect to the rotation center of the wafer W) correspond to each other. Discharging the liquid from the surface nozzle 41 to the central portion of the wafer W means discharging the liquid from the surface nozzle 41 so that the liquid lands on the central portion of the wafer W. Further, the liquid discharged from the surface nozzle 41 landing on the "central portion" of the wafer W includes not only the case where the liquid discharged from the surface nozzle 41 lands on the exact rotation center of the wafer W, but also the case where the liquid spread by the landing momentum spreads to the exact rotation center of the wafer W. The same applies to the liquid discharged from the back surface nozzle 51.

[0053] The rotation speed of the wafer W in the pretreatment step is set to a relatively high speed of, for example, about 1000 rpm. This is to ensure that the pre-wetting liquid and the HDIW quickly spread over the entire front and back surfaces of the wafer W.

[0054] In a preferred embodiment, in the pretreatment step, immediately after the start of discharging the pre-wetting liquid, the discharge flow rate of the pre-wetting liquid is set to a relatively large flow rate of, for example, about 700 ml / min so that the entire surface of the wafer W is quickly covered with the pre-wetting liquid. Then, when the entire surface of the wafer W is covered with the pre-wetting liquid, the discharge flow rate of the pre-wetting liquid is reduced to a small flow rate of about 150 ml / min.

[0055] In a preferred embodiment, in all steps including the pretreatment step, the discharge flow rate of the HDIW discharged from the back surface nozzle 51A is set to a large flow rate of, for example, 1500 ml / min. As a result, the entire back surface of the wafer W is uniformly covered with the HDIW immediately after the start of discharge, and the entire area of the wafer W is quickly and evenly heated by the HDIW. In the case of a low flow rate, it is difficult to warm the outer peripheral portion of the wafer W.

[0056] The pretreatment process is performed for, for example, about 16 seconds (not limited thereto) when the pre-wetting liquid is DIW. When using the functional water described above as the pre-wetting liquid, the time of the pre-wetting process can be shortened to, for example, about 8 seconds (not limited thereto). This is because when using the functional water described above, reattachment of particles to the wafer W is less likely to occur due to the influence of the zeta potential and the like.

[0057] In the pretreatment process, the liquid collected by the liquid receiving cup 60 is discharged to the acid-based factory waste liquid line when the pre-wetting liquid is DIW or ozone water, and is discharged to the alkali-based factory waste liquid line when it is dilute ammonia water.

[0058] As is clear from the above description, the pretreatment process serves as a temperature rising process for raising the temperature of the wafer W to a temperature suitable for chemical solution treatment, and as a pre-wetting process for making the surface of the wafer W easily wettable by the chemical solution.

[0059] [Chemical Solution Treatment Process] When the pretreatment process is completed, next, a chemical solution treatment process for treating the surface of the wafer W with an organic chemical solution is performed. The chemical solution treatment process is composed of a plurality of sub-processes. In the chemical solution treatment process, after the initial sub-process (INI) is performed, the backside heating scan discharge sub-process (S1), the backside non-heating scan discharge sub-process (S2), the backside heating center discharge sub-process (S3), and the backside non-heating center discharge sub-process (S4) are appropriately combined and executed. In the chemical solution treatment process, the backside non-heating scan discharge sub-process (S2) is executed at least once.

[0060] [Initial Sub-Process (INI)] Once the pretreatment process is completed, the rotation speed of the wafer W is decreased to a medium speed, for example, about 600 rpm. The rotation speed of the wafer W during the chemical solution treatment process is maintained at this rotation speed (here, 600 rpm). Almost simultaneously, the discharge of HDIW onto the back surface of the wafer W performed in the pretreatment process is temporarily stopped. Further, a chemical solution at a temperature higher than room temperature (for example, 55°C) is discharged from the chemical solution nozzle 41C to the central portion of the wafer W. The discharge flow rate of the chemical solution is set to a medium discharge flow rate, for example, about 500 ml / min. The state in which the discharge of HDIW onto the back surface of the wafer W is stopped and the chemical solution is discharged onto the front surface of the wafer W is continued for a predetermined time, for example, 3 seconds. The reason for temporarily stopping the discharge of HDIW onto the back surface of the wafer W here is to avoid the temperature at the central portion of the wafer W becoming too high compared to the temperature at the outer peripheral portion. Note that the rotation speed of the wafer W in the chemical solution treatment process is preferably smaller than the rotation speed of the wafer W in the pretreatment process, but it may be the same.

[0061] Next, while continuing to discharge the chemical solution from the chemical solution nozzle 41C to the central portion of the wafer W at the same discharge flow rate, the discharge of HDIW onto the back surface of the stopped wafer W is restarted. By continuing this state for a predetermined time, for example, 2 seconds, the initial sub-process is completed. It can also be said that the initial sub-process is the same as a combination of a back surface non-heated center discharge sub-process (S4) and a back surface heated center discharge sub-process (S3) described later.

[0062] <Back surface heated scan discharge sub-process (S1)> The HDIW is discharged from the back surface nozzle 51A, and the chemical solution is discharged to the center of the wafer W from the chemical solution nozzle 41C at a relatively small discharge flow rate of, for example, about 150 ml / min. From this state, the chemical solution nozzle 41C is moved, and the landing point of the chemical solution is moved from the center of the wafer W to the outer peripheral portion PR of the wafer W, for example, over 1 second (not limited to this). In this specification, the outer peripheral portion PR (the term "outer peripheral portion" with the reference sign "PR" attached) is used as a term meaning a specific position near the periphery (edge) of the wafer W. In this example, the outer peripheral portion PR is a radial position 130 mm away from the rotation center of the wafer W when the wafer W is a 12-inch wafer.

[0063] Next, with the chemical solution nozzle 41C stopped at a position directly above the outer peripheral portion PR of the wafer W for, for example, 1 second (not limited to this), the chemical solution is discharged from the chemical solution nozzle 41C to the outer peripheral portion. Next, the chemical solution nozzle 41C is moved, and the landing point of the chemical solution is moved from the outer peripheral portion of the wafer W to the center of the wafer W, for example, over 1 second (not limited to this). That is, in this back surface heating scan discharge sub-step, while the HDIW is discharged from the back surface nozzle 51A, the chemical solution is scanned and discharged from the chemical solution nozzle 41 onto the surface of the wafer W.

[0064] A state of executing the back surface heating scan discharge sub-step (S1) is schematically shown in FIG. 4(A).

[0065] <Back surface non-heating scan discharge sub-step (S2)> The back surface non-heating scan discharge sub-step is different from the back surface heating scan discharge sub-step only in that the HDIW is not discharged from the back surface nozzle 51A, and the other procedures are exactly the same.

[0066] A state of executing the back surface non-heating scan discharge sub-step (S2) is schematically shown in FIG. 4(B).

[0067] In the backside heating scan ejection sub-process and the backside non-heating scan ejection sub-process, when the liquid landing point of the chemical liquid ejected from the chemical liquid nozzle 41C is at a position away from the center of the wafer W, particularly when it is in the outer peripheral portion PR, the supply conditions of the chemical liquid are determined so that liquid breakage of the chemical liquid (which means that a region where the liquid film of the chemical liquid does not exist occurs) does not occur at the central portion of the surface of the wafer W. In the present embodiment, the time during which the liquid landing point of the chemical liquid is away from the central portion of the wafer W is about 3 seconds. This time also varies depending on the rotation speed of the wafer W, the volatility and fluidity of the chemical liquid, and the like.

[0068] In the backside heating scan ejection sub-process in which HDIW is supplied at a large flow rate (1500 ml / min) to the central portion of the backside of the wafer W from the backside nozzle 51A, as time passes, the temperature of the central portion of the wafer W rises, and the temperature of the central portion becomes higher than the temperature rise of the outer peripheral portion, and the temperature difference also becomes larger (details will be described later).

[0069] On the other hand, in the backside non-heating scan ejection sub-process in which HDIW is not supplied to the central portion of the backside of the wafer W from the backside nozzle 51A, the temperature of the wafer W is determined by the balance between heat radiation from the wafer and heat input by the chemical liquid supplied from the chemical liquid nozzle 41. In the present embodiment, the chemical liquid is supplied from the chemical liquid nozzle 41C at a relatively small flow rate (for example, about 150 ml / min). Since the influence of heat radiation is greater, the temperature of the wafer W gradually decreases as a whole.

[0070] At this time, when the chemical liquid is supplied from the chemical liquid nozzle 41C to the outer peripheral portion PR of the wafer W, while the temperature drop of the outer peripheral portion of the wafer W is suppressed by the chemical liquid, the temperature of the central portion of the wafer W where there is no heat input decreases more significantly than the outer peripheral portion PR. For this reason, the temperature difference between the central portion and the outer peripheral portion PR of the wafer W becomes smaller, or the temperature of the outer peripheral portion PR of the wafer W becomes higher than that of the central portion of the wafer W. By utilizing the tendency of the temperature drop at the central portion of the wafer W in the backside non-heating scan ejection sub-process, the thermal history within the plane of the wafer W can be equalized, and as a result, the etching amount (reaction amount, processing amount) by the chemical liquid can be equalized.

[0071] In the backside non-heated scan ejection sub-process, the relationship between the position of the chemical liquid nozzle 41C and the temperature profile of the wafer W is schematically shown in FIG. 5. The position of the chemical liquid nozzle 41C is shown in the upper part of FIG. 5, and the corresponding temperature profile of the wafer W is shown in the lower part of FIG. 5. From this, it can be seen that by increasing the time during which the chemical liquid is supplied from the chemical liquid nozzle 41C to the outer peripheral portion PR of the wafer W, the temperature of the outer peripheral portion PR of the wafer W can be temporarily made higher than the temperature of the central portion (see C and D in FIG. 5). However, as described above, it is necessary to prevent the chemical liquid from running out at the central portion of the wafer W. From this viewpoint, it is preferable that the period during which the chemical liquid nozzle 41C is stopped at the outer peripheral portion PR of the wafer W is less than 3 seconds.

[0072] In the backside heated scan ejection sub-process, since the temperature profile of the wafer W is greatly affected by the HDIW ejected from the backside nozzle 51A at a large flow rate, it may be impossible or extremely difficult to make the temperature of the outer peripheral portion PR of the wafer W higher than the temperature of the central portion as shown in FIG. 5. However, in the backside heated scan ejection sub-process, supplying the chemical liquid to a position away from the central portion of the wafer W (for example, the outer peripheral portion PR) is helpful for bringing the temperature of the outer peripheral portion PR of the wafer W closer to the temperature of the central portion.

[0073] In the backside heating scan ejection sub-process, since HDIW is supplied to the central portion of the backside of the wafer W, the waste liquid in the backside heating scan ejection sub-process is a mixed liquid of HDIW and the chemical solution. When the chemical solution is an organic-based chemical solution, the waste liquid must be discarded at a disposal site for organic-based waste liquid. When HDIW is supplied at 1500 ml / min and the chemical solution is supplied at 150 ml / min, the waste liquid is generated at 1650 ml / min. In the backside non-heating scan ejection sub-process, since HDIW is not supplied to the central portion of the backside of the wafer W, the waste liquid is generated at 150 ml / min in the backside non-heating scan ejection sub-process. Since the waste liquid disposal cost increases as the amount of waste liquid increases, it is preferable that the amount of waste liquid is small. By including the backside non-heating scan ejection sub-process in the chemical solution treatment process, not only the equalization of the thermal history in the plane of the wafer W can be achieved, but also the reduction of the waste liquid disposal cost can be achieved.

[0074] <Backside heating center ejection sub-process (S3) and backside non-heating center ejection sub-process (S4)> The backside heating center ejection sub-process and the backside non-heating center ejection sub-process are different only in that the scanning operation of the chemical solution nozzle 41C is not performed for the backside heating scan ejection sub-process and the backside non-heating scan ejection sub-process, and the other procedures are exactly the same.

[0075] In FIGS. 4(C) and 4(D), the states of executing the backside heating center ejection sub-process (S3) and the backside non-heating center ejection sub-process (S4) are schematically shown, respectively.

[0076] After appropriately combining and executing the backside heating scan ejection sub-process, the backside non-heating scan ejection sub-process, the backside heating center ejection sub-process, and the backside non-heating center ejection sub-process, for example, the backside non-heating center ejection sub-process can be executed last to end the chemical solution treatment process, but it is not limited to this.

[0077] [Rinse process and drying process] After the completion of the chemical solution treatment step, a rinsing step and a drying step are carried out. The rinsing step and the drying step can be carried out by known methods. The rinsing step can be carried out by supplying DIW as a rinsing liquid to the surface of the wafer W from the surface nozzle 41 for discharging the rinsing liquid while rotating the wafer W. When DIW cannot be used in the rinsing step, IPA may be used as the rinsing liquid. The rinsing step may be carried out while supplying DIW to the back surface of the wafer W from the back surface nozzle 51A or 51B. The drying step can be carried out by rotating the wafer W at a high speed with the supply of the rinsing liquid to the front and back surfaces of the wafer W stopped. The drying step may be carried out while blowing nitrogen gas from the surface nozzle 41 for discharging nitrogen gas onto the surface of the wafer W. The rinsing liquid present on the surface of the wafer W may be replaced with IPA immediately before the drying step.

[0078] Next, with reference to the graph (time chart) of FIG. 6 showing an example of the processing recipe, an example of the processing procedure of the wafer W will be described. The horizontal axis of the graph represents the elapsed time (unit: second) from the start time of the processing (the start time of the dummy dispense step) with the start time t = 0 (second). The vertical axis of the graph shows the following in order from the top. "PW" indicates the discharge flow rate (unit: ml / min) at which DIW or functional water as the pre-wet liquid is discharged to the central portion of the wafer W. The discharge flow rate is either 0, 150 or 700 (ml / min). "CHM" indicates the discharge flow rate (unit: ml / min) of the chemical solution from the chemical solution nozzle 41C. The discharge flow rate is either 0, 150, 500 or 700 (ml / min). "BACK HDIW" indicates the discharge flow rate (unit: ml / min) of the temperature-controlled HDIW from the back surface nozzle 51A. The discharge flow rate is either 0 or 1500 (ml / min). 「NOZ POS」 indicates the position of the chemical liquid nozzle 41C. "H" is the home position outside the liquid receiving cup, "0" is the position directly above the rotation center of the wafer W, and "130" is the position moved 130 mm radially outward from the rotation center of the wafer W (corresponding to the aforementioned outer peripheral portion PR). The diagonal line connecting "0" and "130" indicates that the nozzle is moving. 「RPM」 indicates the rotation speed (revolutions per minute) of the wafer W. The rotation speed of the wafer W is either 0, 600, or 1000 rpm. When changing the rotation speed and when changing the discharge flow rate, there will be some rise or fall times. Therefore, in reality, the lines indicating the rotation speed, etc. will be inclined, but such inclinations are not shown in order to simplify the graph notation.

[0079] First, a dummy dispense process is performed between time point t = 0 and time point t = 4. The dummy dispense process is indicated by "DD" at the uppermost stage of the graph in FIG. 6.

[0080] Next, a pretreatment process is performed between time point t = 4 and time point t = 20. The pretreatment process is indicated by "PT" at the uppermost stage of the graph in FIG. 6. As described above, the discharge flow rate of the pre-wet liquid is set to 700 ml / min immediately after the start of discharge, and when the entire surface of the wafer W is covered with the pre-wet liquid (about 1 to 2 seconds after the start of discharge), it is reduced to 150 ml / min. As another example, when using dilute ammonia water, which is functional water, as the pre-wet liquid, the pretreatment process ends at time point t = 12, and the start and end timings of the subsequent processes are advanced by 8 seconds each.

[0081] Next, a chemical solution treatment step is performed. The chemical solution treatment step is indicated by "CT" at the uppermost stage of the graph in Fig. 6. The uppermost stage of the graph in Fig. 6 also shows the sub-steps included in the chemical solution treatment step. The initial sub-step is "INI", the backside heating scan ejection sub-step is "S1", the backside non-heating scan ejection sub-step is "S2", the backside heating center ejection sub-step "S3", and the backside non-heating center ejection sub-step is indicated by "S4". In the present embodiment, the combination of sub-steps is mainly determined from the viewpoint of the uniformity of the heat history within the plane of the wafer W. In the present embodiment, if the backside non-heating scan ejection sub-step S2 is included, the combination of the other sub-steps is arbitrary, and any one of the sub-steps S1, S3, and S4 may not be included. The temperature of the chemical solution ejected from the chemical solution nozzle 41C is 55°C in this example.

[0082] The steps after the chemical solution treatment step (rinsing step, drying step, etc.) are not shown in the graph of Fig. 6.

[0083] The graph of Fig. 7 shows the temperature distribution of the wafer W when the processing recipe shown in the graph of Fig. 6 is executed. In the graph of Fig. 7, the solid line is the temperature at the center of the wafer W, and the broken line is the temperature at the outer peripheral portion PR of the wafer W. At the upper part of the graph of Fig. 7, the periods during which the pretreatment step PT, the chemical solution step CT, and the sub-steps INI, S1, S2, S3, and S4 of the chemical solution step CT are executed are shown. From the graph of Fig. 7, when the backside non-heating scan ejection sub-step S2 is being executed, the value of "temperature at the center of the wafer W - temperature at the outer peripheral portion PR of the wafer W" becomes small, and in some cases, this value is negative (that is, the temperature at the outer peripheral portion PR of the wafer W is higher than the temperature at the center).

[0084] The processing results when the processing recipe shown in the graph of Fig. 6 (hereinafter also referred to as "Example") is implemented will be described in comparison with the processing by the conventional recipe (hereinafter also referred to as "Comparative Example"). The conventional recipe is one in which, in the pretreatment step and the chemical solution treatment step, without ejecting HDIW for temperature adjustment on the backside, the chemical solution is ejected at 1400 ml / min for 40 seconds to the center of the wafer W in the chemical solution treatment step.

[0085] In the chemical solution process, the chemical solution consumption was 933 ml in the comparative example, while it significantly decreased to 138 ml (a reduction of 85.3%) in the example. The total waste liquid volume in the chemical solution process (corresponding to the total discharge volume of HDIW for temperature control on the back surface + the total discharge volume of the chemical solution) was 933 ml in the comparative example, while it significantly decreased to 590 ml (a reduction of 36.8%) in the example. Regarding the in-plane uniformity of the processing results, the average etching amount in the comparative example was 9.60 Å, the difference between the maximum and minimum values of the etching amount was 3.51 Å, and the uniformity was 16.85%. In contrast, the average etching amount in the example was 10.13 Å, the difference between the maximum and minimum values of the etching amount was 3.45 Å, and the uniformity was 17.47%, showing a slight improvement.

[0086] As a modified embodiment, a temperature measuring device for measuring the temperature distribution of the wafer W (at least the temperatures of the PR at the center and outer periphery of the wafer W) may be provided in the processing unit 16. Examples of the temperature measuring device include a thermal camera, an infrared thermometer, etc. The temperature measuring device is schematically shown with reference numeral 70 in FIG. 2. Based on the temperature measurement results by this temperature measuring device 70, the temperature distribution of the wafer W can be adjusted by changing the processing conditions of each step in the chemical solution treatment process, particularly the processing conditions of the back surface non-heated scan discharge sub-step (S2).

[0087] Examples of the change in processing conditions are as follows. (1) Changing the time when the chemical solution nozzle 41C stops moving at the outer periphery PR of the wafer W. (2) Changing the moving speed of the chemical solution nozzle 41C when the liquid landing point of the chemical solution on the surface of the wafer W moves from the center of the wafer W to the outer periphery PR. For example, making it a constant speed, or increasing the speed as the liquid landing point of the chemical solution approaches the outer periphery PR. (3) Changing the moving speed of the chemical solution nozzle 41C when the liquid landing point of the chemical solution on the surface of the wafer W moves from the outer periphery PR of the wafer W to the center. For example, making it a constant speed, or decreasing the speed as the liquid landing point of the chemical solution approaches the center. When the liquid landing point of the chemical solution on the surface of the wafer W is at the outer peripheral PR, the discharge flow rate of the chemical solution from the chemical solution nozzle 41C is made larger than the discharge flow rate when the liquid landing point of the chemical solution is at the central portion.

[0088] Note that based on the temperature measured by the temperature measuring device 70 in the preliminary processing test or the etching amount distribution measured by the measuring instrument, the processing conditions regarding the above (1) to (4) may be determined in advance, and of course, this may be reflected in the processing recipe in advance.

[0089] Hereinafter, the effects of the above embodiment will be described.

[0090] At the time of filing of the present application, as a chemical solution treatment performed in a single-wafer liquid treatment apparatus (an apparatus for treating one substrate at a time as shown in FIG. 2), there is a chemical solution treatment using an expensive organic chemical solution for the purpose of removing polymer residues or removing a film in the BEOL process. If the concentration, components, etc. vary in such an organic chemical solution, there is a possibility that an inappreciable adverse effect will occur on the treatment result. For this reason, the chemical solution once used for treating the wafer W is discarded without being recovered and reused. Therefore, there is a demand to minimize the amount of the chemical solution used for treating one wafer W.

[0091] However, when the amount of the chemical solution is reduced (that is, when the discharge flow rate of the chemical solution is decreased), the in-plane uniformity of the temperature of the wafer W deteriorates. In particular, when the heated chemical solution is discharged only to the central portion of the wafer W during the chemical solution treatment, the lower the discharge flow rate of the chemical solution, the more remarkable the temperature drop at the outer peripheral portion of the wafer W becomes, and the more remarkable the temperature difference between the central portion and the outer peripheral portion of the wafer W becomes. As an example, when a chemical solution at 55°C was discharged at a flow rate of 1400 ml / min to the central portion of the wafer W, the temperature difference between the central portion and the peripheral portion of the wafer W was 5.8°C, but when the flow rate was reduced to 200 ml / min, the temperature difference widened to 10.6°C. When the temperature difference becomes large in this way, the chemical solution treatment results may also differ significantly between the outer peripheral portion and the central portion. Therefore, it is not preferable to simply reduce the discharge flow rate of the chemical solution without taking any measures.

[0092] The requirements for reducing the amount of chemical solution and the problem of temperature distribution described above exist not only in the BEOL process but also in the chemical solution treatment performed in the FEOL process.

[0093]

[0094]

[0095]

[0096]

[0097] There is also known a single-wafer liquid processing apparatus capable of discharging liquid at different radial positions on the back surface of the substrate. However, such an apparatus is not common and is also expensive.

[0097] The above-described embodiment provides one solution to the various problems described above. According to the above-described embodiment, by intermittently supplying the temperature control liquid (in the embodiment, it corresponds to the implementation of both the back surface heating scan discharge sub-step S1 and the back surface non-heating scan discharge sub-step S2), the amount of waste liquid discharged from the liquid processing apparatus during the chemical liquid treatment can be reduced. Further, when the temperature control liquid is not being supplied, by performing scan discharge of the chemical liquid from the chemical liquid nozzle, the in-plane uniformity of the temperature of the substrate (and thus the chemical liquid treatment result) can be enhanced.

[0098] The embodiments disclosed this time should be considered as illustrative in all respects and not restrictive. The above-described embodiments may be omitted, substituted, or changed in various forms without departing from the scope and gist of the appended claims.

[0099] The substrate to be processed is not limited to a semiconductor wafer, and may be various substrates used in the field of semiconductor device manufacturing, such as a glass substrate, a ceramic substrate, etc.

Explanation of Reference Numerals

[0100] 31 Substrate holding part 33 Rotation drive part 41, 42, 43 First fluid supply part 51A, 52, 53A Second fluid supply part 4 Control part

Claims

1. a substrate holder configured to hold a substrate having a first surface and a second surface in a horizontal position; a rotation drive unit that rotates the substrate holding unit and the substrate held by the substrate holding unit around a vertical axis; a first fluid supply unit that supplies a fluid to the first surface of the substrate held by the substrate holder; a second fluid supply unit that supplies a fluid to the second surface of the substrate held by the substrate holder; A control unit; Equipped with The control unit controls the rotation drive unit, the first fluid supply unit, and the second fluid supply unit, a pre-treatment step of supplying a heated fluid to the second surface of the substrate and a pre-wet liquid to the first surface of the substrate while rotating the substrate at a first rotation speed; a chemical treatment step of supplying a chemical solution to the first surface of the substrate while rotating the substrate at a second rotation speed and intermittently supplying a heated fluid to the second surface of the substrate after the pretreatment step, thereby performing a chemical treatment on the first surface; The substrate processing apparatus executes the above.

2. The substrate processing apparatus of claim 1 , wherein the first rotation speed is equal to or greater than the second rotation speed.

3. 2. The substrate processing apparatus of claim 1, wherein the control unit causes the second fluid supply unit to eject the heated fluid onto the second surface of the substrate and stop ejecting the heated fluid onto the second surface of the substrate at least twice during the chemical liquid processing process.

4. the first fluid supply unit includes a nozzle that discharges the chemical liquid and a nozzle movement mechanism that moves the nozzle, 2. The substrate processing apparatus of claim 1, wherein during a first period during which the chemical liquid processing process is being performed and heated fluid is not supplied from the second fluid supply unit to the second surface of the substrate, the control unit ejects the chemical liquid from the nozzle onto the first surface of the substrate while using the nozzle movement mechanism to move the landing point of the chemical liquid on the first surface of the substrate from the center to the outer periphery of the substrate.

5. 5. The substrate processing apparatus of claim 4, wherein, during the first period, after the landing point of the chemical liquid on the first surface of the substrate reaches the outer periphery, the control unit stops the movement of the nozzle by the nozzle movement mechanism for a predetermined time, and then ejects the chemical liquid from the nozzle onto the outer periphery of the first surface of the substrate.

6. The substrate processing apparatus of claim 5 , wherein the predetermined time is less than 3 seconds.

7. The substrate processing apparatus according to claim 4, wherein, in the first period, when moving the liquid landing point of the chemical liquid from the central portion to the outer peripheral portion of the substrate, the control unit makes the moving speed of the nozzle constant, or increases the speed as the liquid landing point approaches the outer peripheral portion.

8. The substrate processing apparatus according to claim 4, wherein, in the first period, the control unit controls the first fluid supply unit such that the discharge flow rate of the chemical liquid from the nozzle when the liquid landing point of the chemical liquid is at the outer peripheral portion is larger than the discharge flow rate of the chemical liquid from the nozzle when the liquid landing point of the chemical liquid is at the central portion.

9. The substrate processing apparatus according to claim 4, wherein, in the first period, after the liquid landing point of the chemical liquid on the first surface of the substrate reaches the outer peripheral portion, the control unit discharges the chemical liquid from the nozzle onto the first surface of the substrate while moving the liquid landing point of the chemical liquid from the outer peripheral portion to the central portion of the substrate by the nozzle moving mechanism.

10. The substrate processing apparatus according to claim 9, wherein, in the first period, when moving the liquid landing point of the chemical liquid from the outer peripheral portion to the central portion of the substrate, the control unit makes the moving speed of the nozzle constant, or decreases the speed as the liquid landing point approaches the central portion.

11. The substrate processing apparatus further includes a temperature measuring device capable of measuring the surface temperature of at least the central portion and the outer peripheral portion of the first surface of the substrate held by the substrate holding unit. The first fluid supply unit includes a nozzle for discharging the chemical liquid and a nozzle moving mechanism for moving the nozzle. The substrate processing apparatus according to claim 1, wherein the control unit moves the nozzle by the nozzle moving mechanism based on the temperature measurement result of the temperature measuring device to change the liquid landing point of the chemical liquid on the first surface of the substrate.

12. The substrate processing apparatus according to claim 1, wherein the temperature of the chemical liquid supplied to the first surface of the substrate is between 30°C and 80°C.

13. The substrate processing apparatus according to claim 1, wherein the pre-wetting liquid is DIW (pure water) or functional water in which ammonia or ozone is dissolved in DIW.

14. The substrate processing apparatus according to claim 13, wherein the pre-wetting liquid is functional water having an ammonia concentration of 10 ppm or less or functional water having an ozone concentration of 20 ppm or less.

15. The substrate processing apparatus according to claim 1, wherein the chemical solution is a mixed solution of TMAH (tetramethylammonium hydroxide) and hydrogen peroxide solution, ammonia, SC1 (a mixed solution of ammonia water and hydrogen peroxide solution), choline, a mixed solution of choline and hydrogen peroxide solution, or TMAH.

16. A pretreatment step of supplying a pre-wetting liquid to a first surface of the substrate and supplying a heated fluid to a second surface of the substrate while rotating the substrate at a first rotation speed; After the pretreatment step, while rotating the substrate at a second rotation speed, a chemical solution treatment step of intermittently supplying the heated fluid to the second surface of the substrate and supplying a chemical solution from a chemical solution nozzle to the first surface of the substrate to perform chemical solution treatment on the first surface; A substrate processing method comprising the above steps.

17. The substrate processing method according to claim 16, wherein during the chemical solution treatment step, discharging and stopping the discharge of the heated fluid to the second surface of the substrate are performed at least twice each.

18. During a first period in which the heated fluid is not supplied to the second surface of the substrate during the period when the chemical solution treatment step is being performed, by moving the chemical solution nozzle, while moving the liquid landing point of the chemical solution on the first surface of the substrate from the center portion to the outer peripheral portion of the substrate, or while moving the liquid landing point of the chemical solution from the outer peripheral portion to the center portion of the substrate, discharging the chemical solution from the chemical solution nozzle to the first surface of the substrate.

19. In the first period, when the liquid landing point of the chemical solution on the first surface of the substrate is at the outer peripheral portion, stopping the movement of the chemical solution nozzle for a predetermined time, and supplying the chemical solution to the outer peripheral portion for the predetermined time.

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