Display

Abstract

To provide: a display having a narrow frame; a display having high recognizability; a display having low power consumption; and a new display.SOLUTION: A display has a stack structure obtained by laminating a gate driver including a first transistor and a common driver including a second transistor including metal oxide in a channel formation area. Since the gate driver has an occupied area wider than that of the common driver, a part of the gate driver may be formed on the same plane as the common driver.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to an article, a method, or a manufacturing method. In particular, one aspect of the present invention relates to a semiconductor device , a light-emitting device, a display device, an electronic device, a lighting device, a driving method thereof, or a manufacturing method thereof. Or, it relates to an electronic device including a display device, a light-emitting device, a lighting device, or a manufacturing method thereof

[0002] In the present specification and the like, the semiconductor device generally refers to a device that can function by utilizing semiconductor characteristics. Transistors, semiconductor circuits, arithmetic units, storage devices, etc. are one aspect of semiconductor devices In addition, an image pickup light-emitting device, a display device, an electronic device, a lighting device, and an electronic device may have a semiconductor device

Background Art

[0003] High-definition panels used in high-end smartphones and the like are required to have a narrow bezel in order to improve the visual impression. For example, in a high-definition in-cell touch panel embedded type liquid crystal display device (LCD) using LTPS (Low Temperature Poly-Silicon) for the backplane, a method of arranging a common driver circuit for a touch sensor and a gate driver circuit on both sides of the long side of the panel to narrow the bezel width has been studied ure Poly-Silicon) for the backplane, a method of arranging a common driver circuit for a touch sensor and a gate driver circuit on both sides of the long side of the panel to narrow the bezel width has been studied (Patent Document 1).

[0004] However, as the in-cell touch panel embedded LCD further advances in high definition, the number of gate lines increases, and accordingly, the number of shift registers and buffers inside the gate driver increases As a result, a problem occurs in that the operating frequency of the gate driver becomes high ​​​​​​​​As a result, the layout area of the gate driver increases, making it difficult to achieve a narrow border. .

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] Therefore, one aspect of the present invention aims to provide a display device with a narrow border. Also aims to provide a display device with high recognition. Or, aims to provide a display device with low power consumption. Or, aims to provide a novel display device. Or, aims to provide an electronic device equipped with the above display device (display panel) as one of the purposes. Or, aims to provide a novel electronic device as one of the purposes. Note that the description of these problems does not prevent the existence of other problems. One aspect of the present invention

[0007] is not required to solve all of these problems. Also, problems other than the above will become apparent from the description in the specification etc., and it is possible to extract problems other than the above from the description in the specification etc.

Means for Solving the Problems

[0008] and a second drive circuit and a second wiring on the insulating film, and the first drive circuit is the first It has a transistor, the second drive circuit has a second transistor, and the first transistor One of the source and drain is electrically connected to the first wiring, and the source of the second transistor One of the source and drain is electrically connected to the second wiring, and the second transistor has a channel Forming region contains a metal oxide, and in a direction perpendicular to the surface of the first substrate, at least a part of the first drive circuit Overlaps with at least a part of the second drive circuit, the first drive circuit constitutes a gate driver And the second drive circuit constitutes a common driver in a display device.

[0009] The first transistor may contain a metal oxide in the channel formation region.

[0010] Another aspect of the present invention is a first drive circuit and a first wiring on a first substrate, and a first Insulating film on the drive circuit, a second drive circuit, a third drive circuit, and a second wiring on the insulating film It has, the first drive circuit has a first transistor, the second drive circuit has a second transistor The third drive circuit has a third transistor, one of the source and drain of the first transistor Is electrically connected to the first wiring, one of the source and drain of the second transistor Is electrically connected to the second wiring, the second transistor has a channel formation region Contains a metal oxide, and in a direction perpendicular to the surface of the first substrate, at least a part of the first drive circuit overlaps with the second At least a part of the drive circuit overlaps, at least a part of the first drive circuit and the third drive circuit Overlaps, the first drive circuit and the third drive circuit constitute a gate driver, and the second drive circuit Is a display device that constitutes a common driver.

[0011] Each of the first transistor and the third transistor has a metal oxide in the channel formation region It may include.

[0012] The first drive circuit has a larger area than the second drive circuit and the third drive circuit.

[0013] Another aspect of the present invention also includes a first drive circuit and a first wiring on a first substrate, and a first insulating film on the drive circuit, and a second drive circuit and a second wiring on the insulating film. The first drive cir cuit has a first transistor, the second drive circuit has a second transistor, one of the source and drain of the first tr ansistor is electrically connected to the second wiring, one of the source and drain of the second tr ansistor is electrically connected to the first wiring, the first transistor includes a metal oxide in a channel formation region, and at least a part of the first drive circuit and the second drive circuit overlaps in a direction perpendicular to the surface of the first substrate. The first drive circuit constitutes a common driver, and the second drive circuit constitutes a gate driver in a display device. The second transistor may include a metal oxide in a channel formation region. 1 drive circuit and at least a part of the second drive circuit overlap, and the first drive circuit constitutes a common driver, and the second drive circuit constitutes a gate driver in a display device. The second transistor may include a metal oxide in the channel formation region.

[0014] The second transistor may include a metal oxide in the channel formation region.

[0015] Another aspect of the present invention also includes a first drive circuit, a third drive circuit, and a first wiring on a first substrate, an insulating film on the first drive circuit and the third drive circuit, and a second drive cir cuit and a second wiring on the insulating film. The first drive circuit has a first transistor, the second drive cir cuit has a second transistor, the third drive circuit has a third transistor, one of the source and drain of the first tr ansistor is electrically connected to the second wiring, one of the source and drain of the second tr ansistor is electrically connected to the first wiring, and the first transistor It contains metal oxide in the channel formation region. In the direction perpendicular to the surface of the first substrate, at least a part of the first driver circuit and the second driver circuit overlap, at least a part of the second driver circuit and the third driver circuit overlap. The first driver circuit constitutes a common driver, and the second driver circuit and the third driver circuit constitute a gate driver for a display device.

[0016] The second transistor and the third transistor may each contain metal oxide in the channel formation region. It may be included.

[0017] The second driver circuit has a larger area than the first driver circuit and the third driver circuit.

[0018] The first transistor and the second transistor may at least partially overlap in the direction perpendicular to the surface of the first substrate. It may be overlapped at least in part.

[0019] The first wiring is a gate line, and the second wiring is a common line.

[0020] The first transistor has a first gate electrode, a first gate insulating layer on the first gate electrode, a semiconductor layer on the first gate insulating layer, a source and a drain electrically connected to the semiconductor layer, a second gate insulating layer on the source and the drain, and a second gate electrode on the second gate insulating layer. One of the lower surfaces of the source and the drain is in contact with the upper surface of the gate line. And a semiconductor layer on the first gate insulating layer, a source and a drain electrically connected to the semiconductor layer, a second gate insulating layer on the source and the drain, and a second gate electrode on the second gate insulating layer. One of the lower surfaces of the source and the drain is in contact with the upper surface of the gate line. And a semiconductor layer on the first gate insulating layer, a source and a drain electrically connected to the semiconductor layer, a second gate insulating layer on the source and the drain, and a second gate electrode on the second gate insulating layer. One of the lower surfaces of the source and the drain is in contact with the upper surface of the gate line. And a semiconductor layer on the first gate insulating layer, a source and a drain electrically connected to the semiconductor layer, a second gate insulating layer on the source and the drain, and a second gate electrode on the second gate insulating layer. One of the lower surfaces of the source and the drain is in contact with the upper surface of the gate line.

[0021] The second transistor has a first gate electrode, a first gate insulating layer on the first gate electrode, a semiconductor layer on the first gate insulating layer, a source and a drain electrically connected to the semiconductor layer, a second gate insulating layer on the source and the drain, and a second gate electrode on the second gate insulating layer. And a semiconductor layer on the first gate insulating layer, a source and a drain electrically connected to the semiconductor layer, a second gate insulating layer on the source and the drain, and a second gate electrode on the second gate insulating layer. And a semiconductor layer on the first gate insulating layer, a source and a drain electrically connected to the semiconductor layer, a second gate insulating layer on the source and the drain, and a second gate electrode on the second gate insulating layer. It has a gate electrode, and the upper surface of one of the source and the drain is in contact with the lower surface of the common line.

[0022] In this specification, a module in which a connector, for example, an FPC (Flexible printed circuit) or a TCP (Tape Carrier Package) is attached to a display device (display panel), a module in which a printed wiring board is provided at the tip of the TCP, or a COG (Chip On Glass) method is used on a substrate on which a display element is formed. In some cases, a module in which an IC (integrated circuit) is directly mounted may include a display device. exible printed circuit) or a TCP (Tape Carr ier Package) is attached, a module in which a printed wiring board is provided at the tip of the TCP, or a module in which an IC (integrated circuit) is directly mounted on a substrate on which a display element is formed by the COG (Chip On G lass) method may be a display device. lass) method, an IC (integrated circuit) is directly mounted, and the module may include a display device. There are cases.

Advantages of the Invention

[0023] By using one aspect of the present invention, a display device with a narrow bezel can be provided. Or, a display device having a stacked structure drive circuit can be provided. Or, a display device in which a gate driver and a common driver are stacked can be provided. Or, a display device with high recognition can be provided. Or, a display device with low power consumption can be provided. Or, a novel display device can be provided. Or, an electronic device including the above display device (display panel) can be provided. Or, a novel electronic device can be provided. tack structure drive circuit can be provided. Or, a display device in which a gate driver and a common driver are stacked can be provided. Or, a display device with high recognition can be provided. Or, a display device with low power consumption can be provided. Or, a novel display device can be provided. Or, an electronic device including the above display device (display panel) can be provided. Or, a display device with high recognition can be provided. Or, a display device with low power consumption can be provided. Or, a novel display device can be provided. Or, an electronic device including the above display device (display panel) can be provided. Or, a display device with high recognition can be provided. Or, a display device with low power consumption can be provided. Or, a novel display device can be provided. Or, an electronic device including the above display device (display panel) can be provided. Or, a display device with high recognition can be provided. Or, a display device with low power consumption can be provided. Or, a novel display device can be provided. Or, an electronic device including the above display device (display panel ) can be provided. Or, a novel electronic device can be provided. can be provided.

[0024] Note that the description of these effects does not prevent the existence of other effects. Note that one aspect of the present invention does not necessarily have all of these effects. Note that other effects will be apparent from the description in the specification, drawings, claims, etc., and it is possible to extract these other effects from the description in the specification, drawings, claims, etc. Note that one aspect of the present invention does not necessarily have all of these effects. Note that other effects will be apparent from the description in the specification, drawings, claims, etc., and it is possible to extract these other effects from the description in the specification, drawings, claims, etc. will be apparent from the description in the specification, drawings, claims, etc., and it is possible to extract these other effects from the description in the specification, drawings, claims, etc. claims, etc.

Brief Description of the Drawings

[0025]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Figure 13

Figure 14

Embodiments for Carrying Out the Invention

[0026] Hereinafter, embodiments will be described with reference to the drawings. However, the embodiments can be implemented in many different ways, and it will be easily understood by those skilled in the art that the forms and details can be variously changed without departing from the spirit and its scope. Therefore, the present invention is not construed as being limited to the description of the following embodiments.

[0027] Also, in the drawings, the size, layer thickness, or region is exaggerated for clarity in some There is a combination. Therefore, it is not necessarily limited to that scale. Note that the drawings are shown schematically and are not limited to the shapes or values shown in the drawings.

[0028] Also, the ordinal numbers "first", "second", "third", etc. used in this specification are added to avoid confusion of components, and it is noted that they are not numerically limiting.

[0029] Also, in this specification, terms indicating arrangements such as "above" and "below" are used for convenience in explaining the positional relationship between components with reference to the drawings. Also, the positional relationship between components varies appropriately according to the direction in which each component is depicted. Therefore,

[0030] it is not limited to the terms described in the specification and can be appropriately rephrased according to the situation. Also, in this specification and the like, a transistor is an element having at least three terminals including a gate, a drain, and a source. And there is a channel formation region between the drain (drain terminal, drain region or drain electrode) and the source (source

[0031] terminal, source region or source electrode), and current can flow through the drain, the channel formation region, and the source. Note that in this specification and the like, the channel formation region refers to the region through which current mainly flows. Also, the functions of the source and drain may be interchanged when transistors of different

[0032] polarities are adopted or when the direction of current changes in circuit operation. Therefore, in this specification and the like, the terms source and drain can be used interchangeably.Also, in this specification and the like, "electrically connected" includes cases where connection is made through "something having some electrical effect". Here, "something having some electrical effect" is not particularly limited as long as it enables the transfer of electrical signals between the connection targets. For example, "something having some electrical effect" includes electrodes, wiring, switching elements such as transistors, resistive elements, inductors, capacitors, and other elements having various functions.

[0033] Also, in this specification and the like, "parallel" means a state in which two straight lines are arranged at an angle of -10° or more and 10° or less. Therefore, cases of -5° or more and 5° or less are also included. Also, "perpendicular" means a state in which two straight lines are arranged at an angle of 80° or more and 100° or less. Therefore, cases of 85° or more and 95° or less are also included.

[0034] Also, in this specification and the like, the term "film" and the term "layer" can be interchanged with each other. For example, the term "conductive layer" may be changed to the term "conductive film". Or, for example, the term "insulating film" may be changed to the term "insulating layer".

[0035] Also, in this specification and the like, unless otherwise specified, the off-current refers to the drain current when the transistor is in the off state (also referred to as the non-conducting state or the cut-off state). The off state, unless otherwise specified, for an n-channel transistor, is a state where the voltage Vgs between the gate and the source is lower than the threshold voltage Vth, and for a p-channel transistor, it is a state where the voltage between the gate and the source is higher than the threshold voltage Vth. ​​​​This refers to a state where the voltage Vgs between the gate and the source is higher than the threshold voltage Vth. For example, in an n-channel type The off-current of a transistor may refer to the drain current when the voltage Vgs between the gate and the source is lower than the threshold voltage Vth.

[0036] Also, in this specification and the like, the off-current of a transistor having a channel width W may be represented by the current value flowing per channel width W. Alternatively, it may be represented by the current value flowing per a predetermined channel width (for example, 1 μm). In the latter case, the unit of the off-current may be represented by a unit having the dimension of current / length (for example, A / μm). (for example, A / μm).

[0037] In this specification and the like, a metal oxide is an oxide of a metal in a broad sense. Metal oxides are classified into oxide insulators, oxide conductors (including transparent oxide conductors), oxide semiconductors (also referred to as Oxide Semiconductor or simply OS). For example, when a metal oxide is used for the semiconductor layer of a transistor, the metal oxide may be referred to as an oxide semiconductor. That is, when a metal oxide has at least one of an amplification action, a rectification action, and a switching action, the metal oxide can be referred to as a metal oxide semiconductor (metal oxide semiconductor), abbreviated as OS. Also, when describing an OS FET, it can be paraphrased as a transistor having a metal oxide or an oxide semiconductor.

[0038] Also, in this specification and the like, a metal oxide having nitrogen may also be generically referred to as a metal oxide (metal oxi de). A metal oxide having nitrogen may also be referred to as a metal oxynitride (met ​​​It may also be referred to as "al oxynitride".

[0039] In this specification and the like, CAAC (c-axis aligned crystal ), and CAC (cloud aligned complementary) may be described. Note that CAAC represents an example of a crystal structure, and CAC represents an example of a function or the structure of a material.

[0040] In this specification and the like, CAC-OS or CAC-metal oxide has a conductive function in part of the material and an insulating function in part of the material, and has a semiconductor function as a whole. When CAC-OS or CAC-metal oxide is used for the semiconductor layer of a transistor, the conductive function is the function of allowing carriers (electrons or holes) to flow, and the insulating function is the function of not allowing carriers (electrons) to flow. By causing the conductive function and the insulating function to act complementarily, respectively, a switching function (On / Off function) can be imparted to CAC-OS or CAC-metal oxide. In CAC-OS or CAC-metal oxide, by separating each function, both functions can be maximally enhanced.

[0041] In this specification and the like, CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-described conductive function, and the insulating region has the above-described insulating function. In the material, the conductive region and the insulating region may be separated at the nanoparticle level. may be unevenly distributed in the material. Also, the conductive regions may be observed to be connected in a cloud-like manner with blurred edges.

[0042] Also, in CAC-OS or CAC-metal oxide, the conductive regions and the insulating regions may be dispersed in the material with sizes of 0.5 nm or more and 10 nm or less, preferably 0.5 nm or more and 3 nm or less, respectively.

[0043] Also, CAC-OS or CAC-metal oxide is composed of components having different bandgaps. For example, CAC-OS or CAC-metal oxide is composed of a component having a wide bandgap due to the insulating region and a component having a narrow bandgap due to the conductive region. In this case, when carriers flow, the carriers mainly flow in the component having the narrow bandgap. Also, the component having the narrow bandgap acts complementarily to the component having the wide bandgap, and carriers also flow in the component having the wide bandgap in conjunction with the component having the narrow bandgap. Therefore, when the above CAC-OS or CAC-metal oxide is used in the channel formation region of a transistor, a high current driving force, that is, a large on-current, and a high field-effect mobility can be obtained in the on-state of the transistor.

[0044] That is, CAC-OS or CAC-metal oxide can also be referred to as a matrix composite or a metal matrix composite.

[0045] In addition, in this specification and the like, the gate line is a conductive film, for example, it is electrically connected to the gates of a plurality of transistors included in an electronic device such as a display device. The common line is a conductive film, and is electrically connected to one electrode of a plurality of display elements included in an electronic device such as a display device, for example. The gate driver is a circuit having a function of supplying a voltage to the gate line. The common driver is a circuit having a function of supplying a voltage to the common line.

[0046] (Embodiment 1) In this embodiment, the configuration of a display device according to an aspect of the present invention will be described with reference to FIGS. 1 to 10.

[0047] FIG. 1(A) is a schematic diagram when the display device 700 is viewed from above. The display device 700 has a display area 305 on a substrate 710, and a gate driver 301, a source driver 302, and a common driver 303 are arranged around the display area.

[0048] Note that the gate driver 301 and the common driver 303 are arranged in a stacked manner, and at least a part of the gate driver 301 overlaps the common driver 303. In FIG. 1(A), an example is shown in which the gate driver 301 is formed closer to the substrate 710 than the common driver 303.

[0049] FIG. 1(B) is a schematic diagram when FIG. 1(A) is viewed obliquely from above. Similar to FIG. 1(A), the gate driver 301 is formed closer to the substrate 710 than the common driver 303.

[0050] As shown in FIGS. 1(A) and 1(B), the gate driver 301 and the common driver 303 ​​​​By forming them in a stacked manner, the area occupied by the drive circuit in the display device 700 can be reduced, and a narrow bezel can be achieved.

[0051] FIG. 2(A) is a schematic diagram showing the positional relationship between the gate driver 301 and the common driver 303. The gate driver 301 is electrically connected to the first wirings G(1) to G(m), and the common driver 303 is electrically connected to the first conductive films C1(1) to C1(p).

[0052] Similar to FIGS. 1(A) and 1(B), the gate driver 301 and the common driver 303 are stacked, and further, the first wirings G(1) to G(m) and the first conductive films C1(1) to C1(p ) are also stacked.

[0053] FIG. 2(B) is a cross-sectional schematic diagram showing the positional relationship between the gate driver 301 and the common driver 303. The gate driver 301 has a first transistor 780, and the common driver 303 has a second transistor 880.

[0054] The first transistor 780 includes a conductive film 704 on a substrate 710, an insulating film 706 on the conductive film 704, a semiconductor film 718 on the insulating film 706, and conductive films 712A and 712B on the semiconductor film 718, an insulating film 721A on the conductive films 712A and 712B, and an insulating film 7 21A on the insulating film 721A and a conductive film 724B on the insulating film 721A.

[0055] Here, the conductive film 704 functions as a first gate electrode, the insulating film 706 functions as a first gate insulating layer, the semiconductor film 718 functions as a semiconductor layer capable of forming a channel, the conductive film 712A functions as one of a source electrode and a drain electrode, and the conductive film 712B functions as a source ​​functions as the other of the source electrode and the drain electrode, and the insulating film 721A functions as the second gate insulating layer functions, and the conductive film 724B functions as the second gate electrode.

[0056] The conductive film 712B of the first transistor 780 is electrically connected to the first wiring G(i). Note that the first wiring G(i) is formed in the same process as the conductive film 704. Also, the first wiring G(i) functions as a gate line.

[0057] The second transistor 880 includes a conductive film 804 on the insulating film 728, an insulating film 806 on the conductive film 804, a semiconductor film 818 on the insulating film 806, and conductive films 812A and 812B on the semiconductor film 818, an insulating film 821A on the conductive films 812A and 812B, and a conductive film 824B on the insulating film 821A.

[0058] Here, the conductive film 804 functions as the first gate electrode, the insulating film 806 functions as the first gate insulating layer, the semiconductor film 818 functions as a semiconductor layer capable of forming a channel, the conductive film 812A functions as one of the source electrode and the drain electrode, the conductive film 812B functions as the other of the source electrode and the drain electrode, the insulating film 821A functions as the second gate insulating layer, and the conductive film 824B functions as the second gate electrode.

[0059] The conductive film 812B of the second transistor 880 is electrically connected to the first conductive film C1(g). Note that in FIG. 2(B), the structure is such that the first conductive film C1(g) is in direct contact with the conductive film 812B, but it can also be configured to be electrically connected via another conductor.

[0060] In addition, in FIG. 2(B), the first transistor 780 and the second transistor 880 are completely overlapped, but such a structure is not necessarily required. For example, a structure in which a part of the first transistor 780 and the second transistor 880 overlaps may be sufficient.

[0061] In addition, the gate driver 301 may have a third transistor 790 connected in series with the first transistor 780. Also, the common driver 303 may have a fourth transistor 890 connected in series with the second transistor 880.

[0062] In addition, the first transistor 780, the second transistor 880, the third transistor 790, and the fourth transistor 890 are not limited to the structures shown in FIG. 2(B). For example, as the structures of the first to fourth transistors, the structure of the transistor 100 described later or the structure of the transistor MD1 can be adopted.

[0063] As described above, by laminating the gate driver 301 and the common driver 303, the area occupied by the drive circuit in the display device 700 can be reduced, and a narrow border can be achieved.

[0064] FIG. 3 is a diagram for explaining the configuration of the display device 700 according to an aspect of the present invention. FIG. 3(A) is a block diagram for explaining the configuration of the display device 700 according to an aspect of the present invention, and FIG. 3(B) is a schematic diagram for explaining the arrangement of the detection element C(g,h) shown in FIG. 3(A) and the pixel 702(i,j) overlapping the detection element C(g,h).

[0065] FIG. 4 is a diagram for explaining the configuration of the detection element C(g,h) of the display device 700 according to an aspect of the present invention shown in FIG. 3. ​​​​​​​​​​It is a diagram to be referred to. FIG. 4(A) is a top view of the detection element C(g,h) according to one aspect of the present invention, and FIG. 4(B) is a cross-sectional view of the detection element C(g,h) and the pixel 702(i,j) along the cutting line W1-W2 shown in FIG. 4(A).

[0066] FIG. 5 is a diagram for explaining the configuration of the detection element C(g,h) of the display device 700 according to one aspect of the present invention. FIG. 5(A) is a top view of the second conductive film C2(h) of the detection element C(g,h), and FIG. 5 (B) is a top view of the first conductive film C1(g) of the detection element C(g,h), and FIG. 5(C) is a top view of the third conductive film 751 of the display device 700 according to one aspect of the present invention.

[0067] FIG. 6 is a diagram for explaining the configuration of the display device 700 according to one aspect of the present invention. FIG. 6(A) is a top view of a part of the display device 700 according to one aspect of the present invention, and FIG. 6(B) is a top view of a part of the pixel 702(i,j) of the display device 700 according to one aspect of the present invention. FIG. 6(B) is a top view of a part of the pixel 702(i,j) of the display device 700 according to one aspect of the present invention. FIG. 6(B) is a top view of a part of the pixel 702(i,j) of the display device 700 according to one aspect of the present invention.

[0068] FIG. 7 is a diagram for explaining the configuration of the display device 700 according to one aspect of the present invention. FIG. 7(A) is a cross-sectional view of the display device 700 according to one aspect of the present invention along the cutting lines X1-X2, X3-X4, X5-X6 shown in FIG. 6( A). Further, FIG. 7(B) is a cross-sectional view for explaining the details of the transistor MD1 shown in FIG. 7(A), and FIG. 7(C) is a cross-sectional view for explaining the details of the transistor MA shown in FIG. 7(A). Further, FIG. 7(D) is a cross-sectional view for explaining a modified example of a part of the configuration shown in FIG. 7(A). FIG. 7(B) is a cross-sectional view for explaining the details of the transistor MD1 shown in FIG. 7(A), and FIG. 7(C) is a cross-sectional view for explaining the details of the transistor MA shown in FIG. 7(A). Further, FIG. 7(D) is a cross-sectional view for explaining a modified example of a part of the configuration shown in FIG. 7(A). FIG. 7(B) is a cross-sectional view for explaining the details of the transistor MD1 shown in FIG. 7(A), and FIG. 7(C) is a cross-sectional view for explaining the details of the transistor MA shown in FIG. 7(A). Further, FIG. 7(D) is a cross-sectional view for explaining a modified example of a part of the configuration shown in FIG. 7(A). FIG. 7(B) is a cross-sectional view for explaining the details of the transistor MD1 shown in FIG. 7(A), and FIG. 7(C) is a cross-sectional view for explaining the details of the transistor MA shown in FIG. 7(A). Further, FIG. 7(D) is a cross-sectional view for explaining a modified example of a part of the configuration shown in FIG. 7(A). FIG. 7(D) is a cross-sectional view for explaining a modified example of a part of the configuration shown in FIG. 7(A).

[0069] In addition, in this specification, g and i used to represent the positions of the detection element, the conductive film, the pixel, etc. represent integers from 1 to p, and h and j represent integers from 1 to q. For example, g and i used to represent the positions of the detection element, the conductive film, the pixel, etc. represent integers from 1 to p, and h and j represent integers from 1 to q. For example, The pixel 702(i,j) refers to the pixel located at the i-th row and j-th column among the pixels 702 arranged in a matrix of 1 to p in the row direction and 1 to q in the column direction. It indicates the pixel located at the i-th row and j-th column among the pixels 702 arranged in a matrix.

[0070] <Configuration example of the display device 700> The display device 700 described in this embodiment includes a substrate 710, pixels 702(i,j), a display element 750, and a detection element C(g,h) (see FIG. 7).

[0071] The substrate 710 has light transmissibility, the display element 750 has a region overlapping with the substrate 710, and the detection element C(g,h) is disposed between the display element 750 and the substrate 710.

[0072] The pixel 702(i,j) includes the display element 750.

[0073] The display element 750 has a function of displaying on the side where the substrate 710 is located. For example, a backlight can be arranged on the substrate 770 side so as to emit light BL from the substrate 770 toward the substrate 710, and display can be performed (see FIG. 4(B)).

[0074] The detection element C(g,h) has a function of detecting an object that is close to or in contact with the side where the substrate 710 is located (see FIG. 4(B)).

[0075] The detection element C(g,h) includes a first conductive film C1(g), a second conductive film C2(h) between the first conductive film C1(g) and the substrate 710, and an insulating film 721B between the first conductive film C1(g) and the second conductive film C2(h).

[0076] Also, the display element 750 of the display device 700 includes a layer 753 containing a liquid crystal material, and an electric field for controlling the alignment of the liquid crystal material contained in the layer 753 is applied between the layer 753 and the first conductive film C1(g). It includes a third conductive film 751 arranged so as to be capable of printing.

[0077] The display device 700 described in this embodiment includes a detection element C(g,h) including a first conductive film C1(g) and a second conductive film C2(h), a layer 753 containing a liquid crystal material, and an electric field for controlling the alignment of the liquid crystal material contained in the layer 753 containing the liquid crystal material, and a first conductive film C1(g) A display element 750 including a third conductive film 751 arranged so as to be able to apply between them. Thereby, the conductive film included in the detection element can be used for the display element. As a result, it is possible to provide a novel display device excellent in convenience or reliability.

[0078] Further, the display device 700 has a transistor MA electrically connected to the display element 750. And the third conductive film 751 is electrically connected to the source electrode or drain electrode of the transistor MA.

[0079] Further, the transistor MA of the display device 700 includes a semiconductor film 718. And the insulating film 721B includes a region sandwiched between the layer 753 containing the liquid crystal material and the semiconductor film 718 (see FIG. 7(C)).

[0080] Further, the display device 700 includes a gate line G(i) electrically connected to the transistor MA, a signal line S(j) electrically connected to the transistor MA, a plurality of transistors electrically connected to the gate line G(i), and a plurality of transistors electrically connected to the signal line S(j). (see FIG. 4(A)). Specifically, the conductive film 704 functioning as the gate electrode of the transistor MA is electrically connected to the gate line G(i), and the source electrode or drain electrode functions as and is electrically connected to the source electrode or drain The conductive film 712B that functions as an in-electrode is electrically connected to the signal line S(j) (see Fig. 7( C)).

[0081] The first conductive film C1(g) or the second conductive film C2(h) has an opening overlapping with the gate line G(i) or the signal line S(j) (see Fig. 5(A) or Fig. 5(B)).

[0082] The display device 700 described in this embodiment has a gate line G(i) electrically connected to the transistor MA and a signal line S(j) electrically connected to the transistor, and includes a first conductive film C1(g) or a second conductive film C2(h) having an opening overlapping with the signal line S(j) or the gate line G(i). Thereby, the area of the region where the gate line or the signal line overlaps with the first conductive film or the second conductive film can be reduced, and the capacitance parasitic on the gate line or the signal line can be reduced. As a result, a novel touch panel excellent in convenience or reliability can be provided.

[0083] Further, the semiconductor film 718 of the display device 700 contains indium, gallium, zinc, and oxygen.

[0084] Further, the second conductive film C2(h) of the display device 700 contains indium, gallium, zinc, and oxygen.

[0085] The display device 700 described in this embodiment includes a transistor MA having a semiconductor film 718 containing indium, gallium, zinc, and oxygen, and a sensing element C(g,h) having a second conductive film C2(h) containing indium, gallium, zinc, and oxygen. Thereby, a film containing indium, gallium, zinc, and oxygen can be formed in the same process.​​​​​​​​​​ In addition, indium, gallium, zinc, and oxygen formed in the same process can be The film containing the compound can be used as a semiconductor film or a second conductive film. A novel touch panel with excellent reliability can be provided.

[0086] In addition to the above configuration, the display device 700 includes a gate driver 301, a source driver 302, A common driver 303 may be included (see FIG. 3(A)).

[0087] The gate driver 301 is electrically connected to the gate lines G(1) to G(m), and For example, the transistor MD1 is connected to the gate driver 301. It can be used (see FIG. 7(A)).

[0088] The source driver 302 is electrically connected to the signal lines S(1) to S(n), and outputs, for example, an image signal. The source driver 302 has a function of supplying a signal. C2(q) and varies based on, for example, the driving signal and capacitance. The potential of the second conductive films C2(1) to C2(q) is detected and a detection signal is supplied. can.

[0089] The common driver 303 is electrically connected to the first conductive films C1(1) to C1(p), For example, it has a function of supplying a driving signal including a square wave. For example, transistor MD2 can be used for the common driver 303 (see FIG. 7A).

[0090] As shown in FIG. 3A and FIG. 7A, the common driver 303 and the gate driver 301 By forming the driving circuit portion in an overlapping manner, the area of the driving circuit portion can be reduced.

[0091] In FIGS. 3(A) and 3(B), m, n, p, and q are integers of 2 or more, g is an integer of 1 or more and p or less, and h is an integer of 1 or more and q or less.

[0092] Further, the display device 700 can have detection elements in a matrix of p rows and q columns. Note that the detection element C(g, h) includes a first conductive film C1(g) in the g-th row and a second conductive film C2 (h) in the h-th column.

[0093] Further, the display device 700 can have display elements in a matrix of m rows and n columns. Note that the pixel 702(i, j) includes a display element 750. Further, the pixel 702(i, j) is electrically connected to the gate line G(i) in the i-th row and electrically connected to the signal line S(j) in the j-th column.

[0094] Further, the display device 700 can have one or more pixels including a region overlapping with the detection element. For example, it can have the pixel 702(i, j) overlapping with the detection element C(g, h) and other pixels (see FIGS. 3(B) and 4(B)).

[0095] Further, the display device 700 can have a plurality of gate lines arranged along the first conductive film C1(g). For example, it can have the gate line G( i - 1) and the gate line G(i) arranged along the first conductive film C1(g) (see FIG. 4(A)). Note that another conductive film may be electrically connected to the first conductive film C1(g). For example, a conductive film 704S may be connected to the first conductive film C1 (g) (see FIG. 7(D)). Thereby, the electrical resistance can be reduced.

[0096] The display device 700 may also have a plurality of signal lines arranged along the second conductive film. For example, the signal lines S(j) to S(j) arranged along the second conductive film C2(h) +9) (see FIG. 4(A)).

[0097] The display device 700 may also have a first conductive film C1(g) with an opening. For example, an opening overlapping the gate line G(i-1) and an opening overlapping the gate line G(i) A conductive film having the above structure can be used as the first conductive film C1(g) (see FIG. 5(B)).

[0098] The display device 700 may also have a second conductive film having an opening. For example, The conductive film having openings overlapping with the signal line S(j) to the signal line (j+9) is 2 can be used for the conductive film C2(h) (see FIG. 5(A)).

[0099] In addition, the display device 700 has a structure in which the electric field is oriented in a direction intersecting the thickness direction of the layer 753 containing the liquid crystal material. A third conductive film 751 disposed so as to apply a lateral electric field (also called a transverse electric field) can be used. For example, a comb-shaped third conductive film 75 having an area overlapping with the first conductive film C1(g) can be formed. 1 can be used (see Figure 4(B) and Figure 5(C)). Alternatively, The third layer 753 is disposed so as to apply an electric field (also called a longitudinal electric field) in the thickness direction of the layer 753. A conductive film 751 can be used.

[0100] Hereinafter, each element constituting the display device according to one embodiment of the present invention will be described. These components cannot be clearly separated, and one component may serve as another component or may include parts of another component. This may occur.

[0101] For example, the first conductive film C1(g) is part of the detection element C(g,h) and is also part of the display element 750.

[0102] Further, the display device 700 can include a substrate 770 having a region overlapping with the substrate 710, and a sealing material 730 having a function of bonding the substrate 710 and the substrate 770. Thereby, for example, the display element 750 can be disposed in a region surrounded by the substrate 710, the substrate 770, and the sealing material 730.

[0103] Further, the display device 700 can have a structure KB between the substrate 710 and the substrate 770. Thereby, a predetermined interval can be provided between the substrate 710 and the substrate 770.

[0104] Further, the display device 700 can have a colored film CF having a region overlapping with the display element 750. Also, the display device 700 can have a light-shielding film BM having an opening in a region overlapping with the display element 750.

[0105] Further, the display device 700 can have an insulating film 771 between the colored film CF and the layer 753 containing the liquid crystal material. Also, the display device 700 can have an insulating film 771 between the light-shielding film BM and the layer 753 containing the liquid crystal material. Thereby, unevenness caused by the thickness of the colored film CF can be flattened, or diffusion of impurities from the colored film CF or the light-shielding film BM to the layer 753 containing the liquid crystal material can be suppressed.

[0106] Further, the display device 700 can have an alignment film AF1 between the layer 753 containing the liquid crystal material and the substrate 710. Also, the display device 700 can have an alignment film AF2 between the layer 753 containing the liquid crystal material and the substrate 770. ​​​​​​​​​​​​

[0107] In addition, the display device 700 can have an optical film 710P or an optical film 770P. For example, the optical film 710P can be disposed so as to sandwich the substrate 710 between the layer 753 containing the liquid crystal material. Or, the optical film 770P can be disposed so as to sandwich the substrate 770 between the layer 753 containing the liquid crystal material.

[0108] For example, a polarizing plate can be used for the optical film 710P and the optical film 770P. The polarizing plate can be used such that the other polarization direction becomes a predetermined direction with respect to one polarization direction. Specifically, two linear polarizing plates can be arranged and used in a crossed Nicol relationship.

[0109] In addition, the display device 700 can have a conductive film 724 provided in a region overlapping with the semiconductor film 718 of the transistor MD1. For example, a material that can be formed in the same process as the first conductive film C1(g) can be used for the conductive film 724 (see FIG. 7(B)).

[0110] In addition, the display device 700 can have an insulating film 701 between the transistor MA and the substrate 710. Also, an insulating film 721B or an insulating film 728 can be provided between the layer 753 containing the liquid crystal material and the semiconductor film 718. In addition, an insulating film 721A can be provided between the insulating film 721B and the semiconductor film 718.

[0111] For example, the insulating film 701 has a function of suppressing the diffusion of impurities from the substrate 710 to the transistor MA, and the insulating film 721B or the insulating film 721A has a function of suppressing the diffusion of impurities to the semiconductor film 718. ​​​​​​

[0112] For example, the insulating film 728 has a function of flattening the step difference derived from a structure such as the transistor MA overlapping with the insulating film 728.

[0113] Also, the display device 700 can have an insulating film 706 between the conductive film 704 and the semiconductor film 718. For example, the insulating film 706 has a function of a gate insulating film.

[0114] Also, the display device 700 can have a wiring 711 that is electrically connected to the display element 750 or the detection element C(g,h).

[0115] Also, the display device 700 can have a terminal 719 that is electrically connected to the wiring 711. For example, the flexible printed circuit board FPC1 can be electrically connected to the terminal 71 9 using the conductive member ACF1.

[0116] 《Configuration》 The display device 700 has a substrate 710, a display element 750, or a detection element C(g,h).

[0117] Also, the display device 700 includes a first conductive film C1(g), a second conductive film C2(h), an insulating film 7 21B, a layer 753 containing a liquid crystal material, or a third conductive film 751.

[0118] Also, the display device 700 includes a transistor MA, a semiconductor film 718, a gate line G(i), or a signal line S(j).

[0119] Also, the display device 700 can have a common driver, a gate driver, and a source driver.

[0120] 《Substrate 710》 The substrate 710 only needs to be made of a material having heat resistance capable of withstanding heat treatment during the manufacturing process, and for example, a glass substrate can be used. Specifically, non-alkali glass, soda-lime glass, potassium glass, crystal glass, quartz or sapphire, etc. can be used for the substrate 710. Also, metal substrates such as SUS or aluminum, single-crystal semiconductor substrates made of silicon or silicon carbide, polycrystalline semiconductor substrates, compound semiconductor substrates such as silicon germanium, SOI substrates, etc. can be used for the substrate 710.

[0121] Specifically, non-alkali glass, soda-lime glass, potassium glass, crystal glass, quartz or sapphire, etc. can be used for the substrate 710. Also, metal substrates such as SUS or aluminum or nickel, etc., single-crystal semiconductor substrates made of silicon or silicon carbide, polycrystalline semiconductor substrates, compound semiconductor substrates such as silicon germanium, SOI substrates, etc. can be used for the substrate 710. can be used.

[0122] In addition, resin films or resin plates made of polyester, polyolefin, polyamide, polyimide, polycarbonate or acrylic, etc. may also be used for the substrate 710. can be used for the substrate 710.

[0123] 《Substrate 770》 The substrate 770 can be made of a material that can be used for the substrate 710.

[0124] 《Conductive film 704, conductive film 712A, conductive film 712B, wiring 711, terminal 719》 A material having conductivity can be used for the conductive film 704, conductive film 712A, conductive film 712B, wiring 711 or the terminal 719.

[0125] For example, inorganic conductive materials, organic conductive materials, metals or conductive ceramics, etc. can be used for the conductive film 704, conductive film 712A, conductive film 712B, wiring 711 or terminal 719. can be used.

[0126] Specifically, metals selected from aluminum, gold, platinum, silver, copper, chromium, tantalum, titanium, molybdenum , tungsten, nickel, iron, cobalt, palladium or manganese Elements, etc. can be used for the conductive film 704, the conductive film 712A, the conductive film 712B, the wiring 711, or the terminal 7 19. Alternatively, an alloy containing the above-described metal element, etc. can be used for the conductive film 704 , the conductive film 712A, the conductive film 712B, the wiring 711, or the terminal 719 . In particular, an alloy of copper and manganese is suitable for microfabrication using the wet etching method.

[0127] Also, a two-layer structure in which a titanium film is laminated on an aluminum film, a two-layer structure in which a titanium film is laminated on a titanium nitride film , a two-layer structure in which a tungsten film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a tantalum nitride film or a two-layer structure in which a tungsten film is laminated on a tungsten nitride film, a titanium film, and an aluminum film is laminated on the titanium film, and further a titanium film is formed thereon, etc. can be used for the conductive film 704 , the conductive film 712A, the conductive film 712B, the wiring 711, or the terminal 719 .

[0128] In addition, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide added with gallium , films containing graphene or graphite, etc. can be used for the conductive film 704 , the conductive film 712A, the conductive film 712B, the wiring 711, or the terminal 719 .

[0129] 《Gate line G(i), signal line S(j)》 A material having conductivity can be used for the gate line G(i) or the signal line S(j). For example , a material that can be used for the wiring 711 can be used for the gate line G(i) or the signal line S(j) .

[0130] 《Detection element C(g,h)》 ​The detection element C(g,h) has a function of detecting capacitance, illuminance, magnetic force, radio waves, pressure, etc., and supplying a signal based on the detected physical quantity.

[0131] For example, a capacitive element, a photoelectric conversion element, a magnetic detection element, a piezoelectric element, a resonator, etc. can be used for the detection element C(g,h). (g,h).

[0132] For example, a detection element having a function of supplying a signal that changes based on a change in capacitance can be used for the detection element C(g,h). Specifically, a mutual capacitance method or a self-capacitance method can be used.

[0133] For example, a capacitive element including a first conductive film C1(g) and a second conductive film C2(h) can be used for the detection element C(g,h).

[0134] When something such as a finger having a dielectric constant larger than that of the atmosphere approaches the second conductive film C2(h) in the atmosphere, the capacitance between the finger and the second conductive film C2(h) changes. A signal can be supplied based on this change in capacitance.

[0135] Specifically, a driving signal is supplied to the first conductive film C1(g), and the potential of the second conductive film C2(h) that changes based on the driving signal and the capacitance is detected and used as a detection signal.

[0136] 《First Conductive Film C1(g)》 A material having conductivity can be used for the first conductive film C1(g). For example, a material that can be used for wiring 711 can be used for the first conductive film C1(g).

[0137] Specifically, a material having conductivity and translucency can be used for the first conductive film C1(g).​​​​​​​​​ This is possible. For example, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide doped with gallium, etc. can be used. By doing so, a uniform electric field can be supplied without blocking the display of the display element 750.

[0138] 《Second conductive film C2(h)》 A material having conductivity can be used for the second conductive film C2(h). For example, a material having conductivity and transparency can be used for the second conductive film C2(h). Specifically, a conductive oxide or an oxide semiconductor can be used. For example, a material containing indium, gallium, zinc, and oxygen can be used.

[0139] For example, an oxide semiconductor whose conductivity has been enhanced by using a method for controlling the resistivity of the oxide semiconductor, and which is formed in the same process as the semiconductor film 718, can be used for the second conductive film C2(h). By doing so, the second conductive film C2(h) can be manufactured using a simple process.

[0140] 《Insulating films 701, 706, 721A, 721B, 728, 771》 For example, an insulating inorganic material, an insulating organic material, or an insulating composite material containing an inorganic material and an organic material can be used for the insulating films 701, 706, 721A, 721B, 7 28, or 771. Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or a laminated material obtained by laminating a plurality of these can be used for the insulating films 701, 706, 721A, insulating film 721B, 728, or 771.

[0141] 721B, 728, or 771. It can be used for the insulating film 721B, the insulating film 728, or the insulating film 771. For example, a silicon oxide film , a silicon nitride film, a silicon oxynitride film, or a laminated material formed by laminating a plurality selected from these can be used.

[0142] Specifically, a laminated material or a composite material of polyester, polyolefin, polyamide, polyimide, polycarbonate , polysiloxane, acrylic resin, etc., or a plurality of resins selected from these can be used for the insulating film 721A, the insulating film 721B, the insulating film 728, and the insulating film 771. Also, it may be formed using a photosensitive material. For example, polyimide, epoxy resin, acrylic resin, etc. can be used for the insulating film 771.

[0143] 《Display element 750》 For example, a display element having a function of controlling light reflection or transmission can be used for the display element 750. For example, a configuration combining a liquid crystal element and a polarizing plate or a shutter-type MEMS display element, etc. can be used.

[0144] Specifically, a liquid crystal element driven using a driving method such as the IPS (In-Plane-Switching) mode, the TN (Twisted Nematic) mode, the FFS (Fringe Field Switching) mode, the ASM (Axially Symmetric aligned Micro-cell) mode, the OCB (Optically Compensated Birefringence) mode, the FLC (Ferroelectric Liquid Crystal) mode, the AFLC (AntiFerroelectric Liquid Crystal) mode, etc. can be used. It can be used.

[0145] Also, for example, driving methods such as vertical alignment (VA) mode, specifically, MVA (Multi-Domain Vertical Alignment) mode, PVA (Patterned Ve rtical Alignment) mode, ASV mode, etc. can be used to drive a liquid crystal element that can be used for the display element 750.

[0146] For example, a layer 753 containing a liquid crystal material, a first conductive film C1(g) and a third conductive film 751 arranged so as to be able to apply an electric field for controlling the alignment of the liquid crystal material can be used for the display element 750. It can be used.

[0147] 《Layer 753 Containing Liquid Crystal Material》 For example, thermotropic liquid crystals, low molecular liquid crystals, high molecular liquid crystals, polymer dispersed liquid crystals, ferroelectric liquid crystals, antiferroelectric liquid crystals, etc. can be used. These liquid crystal materials can show, depending on conditions, cholesteric phases, smectic phases, cubic phases, chiral nematic phases, isotropic phases, etc. Liquid crystal materials showing a blue phase can be used for the layer 753 containing the liquid crystal material.

[0148] 《Third Conductive Film 751》 A material having conductivity can be used for the third conductive film 751.

[0149] For example, a material that can be used for the wiring 711 can be used for the third conductive film 751. Specifically, a material having translucency can be used for the third conductive film 751. For example a comb-like shape can be used for the third conductive film 751.

[0150] 《Transistor MA》​​ For example, a transistor such as a bottom gate type or a top gate type can be used as transistor MA.

[0151] For example, compared with a transistor using amorphous silicon as a semiconductor film, a transistor with a small leakage current in the off state can be used as transistor MA. Specifically, a transistor using an oxide semiconductor as the semiconductor film 718 can be used as transistor MA.

[0152] As a result, the time during which the pixel circuit can hold an image signal can be made longer compared with a pixel circuit using a transistor with amorphous silicon as the semiconductor film. Specifically, while suppressing the occurrence of flicker, the selection signal can be supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute. As a result, the fatigue accumulated by the user of the information processing apparatus can be reduced. Also, the power consumption associated with driving can be reduced.

[0153] Transistor MA includes a semiconductor film 718 and a conductive film 704 provided in a region overlapping the semiconductor film 718 (see FIG. 7(C)). Also, transistor MA includes a conductive film 712A and a conductive film 712B.

[0154] Note that the conductive film 704 has the function of a gate electrode, and the insulating film 706 has the function of a gate insulating film. Also, the conductive film 712A has one of the functions of a source electrode or a drain electrode, and the conductive film 712B has the other of the functions of a source electrode or a drain electrode.

[0155] 《Semiconductor film 718》 ​​​​​​​​​​​

[0156] For example, an oxide semiconductor can be used for the semiconductor film 718. Specifically, an oxide semiconductor containing indium or an oxide semiconductor containing indium, gallium, and zinc can be used for the semiconductor film.

[0157] 《Gate driver 301》 Various sequential circuits such as shift registers can be used for the gate driver 301. For example, transistors MD1, capacitive elements, etc. can be used for the gate driver 301.

[0158] For example, a transistor having a region overlapping with a conductive film 704 having the function of the first gate electrode can be used for the transistor MD1. The transistor M D1 has a stacked film in which an insulating film 721A and an insulating film 721B are stacked between a conductive film 724 and a semiconductor film 718. Also, the conductive film 724 may be electrically connected to a wiring that supplies the same potential as the potential supplied to the conductive film 704.

[0159] The gate driver 301 can be stacked and arranged with the common driver 303. For example, as shown in FIG. 7(A), a transistor MD2 included in the common driver 303 may be formed on the transistor MD1 included in the gate driver 301.

[0160] 《Source driver 302》 For example, an integrated circuit can be used for the source driver. Specifically, an integrated circuit formed on a silicon substrate can be used.

[0161] For example, the source driver can be mounted using the COG (Chip on glass) method. ​​​​​Specifically, it can be mounted on a pad electrically connected to the signal line S(j) using an anisotropic conductive film. It can be mounted.

[0162] The source driver is electrically connected to the second conductive films C2(1) to C2(q), and has functions such as separating and amplifying signals received by the second conductive films C2(1) to C2(q). It has functions such as separating and amplifying signals received by the second conductive films C2(1) to C2(q).

[0163] 《Common Driver 303》 The common driver is electrically connected to the first conductive films C1(1) to C1(p), and has functions such as supplying signals to the first conductive films C1(1) to C1(p) (see FIG. 3A). It has functions such as supplying signals to the first conductive films C1(1) to C1(p) (see FIG. 3A).

[0164] 《Sealing Material 730》 For example, an inorganic material, an organic material, or a composite material of an inorganic material and an organic material can be used as the sealing material 730. It can be used.

[0165] For example, an organic material such as a heat-melting resin or a curable resin, a reaction-curing adhesive, a photo-curing adhesive, a heat-curing adhesive, or / and an anaerobic adhesive can be used as the sealing material 730. It can be used. It can be used.

[0166] Specifically, adhesives including epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, EVA (ethylene vinyl acetate) resin, etc. can be used as the sealing material 730. It can be used. It can be used. It can be used.

[0167] 《Colored Film CF》 A material that transmits light of a predetermined color can be used as the colored film CF. Thereby, for example, the colored film CF can be used as a color filter. It can be used.

[0168] For example, materials that transmit blue light, materials that transmit green light, materials that transmit red light, materials that transmit yellow light, materials that transmit white light, etc. can be used for the color filter CF. This is possible.

[0169] 《Light-Shielding Film BM》 Materials that impede light transmission can be used for the light-shielding film BM. As a result, for example, the light-shielding film B M can be used as a black matrix.

[0170] 《Structural Body KB》 For example, organic materials, inorganic materials, or composite materials of organic and inorganic materials can be used for the structural body KB. This allows for the provision of a predetermined interval between the components sandwiching the structural body KB. This is possible.

[0171] Specifically, polyester, polyolefin, polyamide, polyimide, polycarbonate, polysiloxane, acrylic resin, etc., or composite materials of a plurality of resins selected from these can be used for the structural body KB. Also, materials having photosensitivity can be used for formation. This may be done. This is possible.

[0172] Also, as shown in FIG. 8, the structural body KB1 in the region where the gate driver 301 and the common driver 303 are laminated may be made smaller than the structural body KB2 in the display region. By adopting such a structure, it is possible to achieve both the lamination of the gate driver 301 and the common driver 303 and the suppression of the increase in the thickness of the entire display device 700. This is possible. This is possible. This is possible.

[0173] 《Alignment Films AF1, AF2》 For example, polyimide, etc. can be used for the alignment film AF1 or the alignment film AF2. Specifically, formed by using rubbing treatment or photo-alignment technology so as to be aligned in a predetermined direction. A film can be used.

[0174] 《Optical Film 710P, Optical Film 770P》 For example, a polarizing plate, a retardation plate, a diffusion film, an antireflection film, a condenser film, etc. can be used for the optical film 710P or the optical film 770P. Or, a polarizing plate containing a dichroic dye can be used for the optical film 710P.

[0175] In addition, an antistatic film that suppresses dust adhesion, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches during use, etc. can be used for the optical film 710P.

[0176] <Method for Controlling Resistivity of Oxide Semiconductor> A method for controlling the resistivity of a film containing an oxide semiconductor will be described.

[0177] A film containing an oxide semiconductor having a predetermined resistivity can be used for the second conductive film C2(h) (see FIG. 7(A)).

[0178] For example, a method for controlling the concentration of impurities such as hydrogen and water contained in the oxide semiconductor film and / or oxygen vacancies in the film can be used as a method for controlling the resistivity of the oxide semiconductor.

[0179] Specifically, plasma treatment can be used as a method for increasing or decreasing the concentration of impurities such as hydrogen and water and / or oxygen vacancies in the film.

[0180] Specifically, plasma treatment performed using a gas containing one or more selected from rare gases (He, Ne, Ar, Kr, Xe), hydrogen, boron, phosphorus, and nitrogen can be applied. For example, A Plasma treatment in an r atmosphere, plasma treatment in a mixed gas atmosphere of Ar and hydrogen, ammonia Plasma treatment in an atmosphere, plasma treatment in a mixed gas atmosphere of Ar and ammonia , or plasma treatment in a nitrogen atmosphere can be applied. As a result, a carrier density can be made into an oxide semiconductor film with a high resistivity and a low resistivity.

[0181] Alternatively, hydrogen, boron, phosphorus, or nitrogen can be implanted into the oxide semiconductor film using an ion implantation method, an ion doping method, or a plasma immersion ion implantation method , etc., to make an oxide semiconductor film with a low resistivity.

[0182] Alternatively, a method of forming an insulating film containing hydrogen in contact with the oxide semiconductor film and diffusing hydrogen from the insulating film into the oxide semiconductor film can be used. As a result, the carrier density of the oxide semiconductor film can be increased and the resistivity can be lowered.

[0183] For example, by forming an insulating film having a hydrogen concentration of 1×10 atoms / cm 22 or more in contact with the oxide semiconductor film, hydrogen can be effectively incorporated into the oxide semiconductor film 3 . Specifically, a silicon nitride film can be used for the insulating film formed in contact with the oxide semiconductor film.

[0184] The hydrogen contained in the oxide semiconductor film reacts with the oxygen bonded to the metal atom to form water, and at the same time, an oxygen deficiency is formed in the lattice (or the part where oxygen has desorbed) from which oxygen has desorbed. When hydrogen enters the oxygen deficiency, electrons, which are carriers, may be generated. In addition, when a part of the hydrogen binds to the oxygen bonded to the metal atom, electrons, which are carriers, may be generated. As a result, an oxide semiconductor film with high carrier density and low resistivity can be obtained.

[0185] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0186] (Embodiment 2) In this embodiment, a structure of a transistor that can be used in a display device of one embodiment of the present invention will be described. This will be described with reference to FIG.

[0187] <Configuration example of semiconductor device> 12A is a top view of the transistor 100, and FIG. 12C is a top view of the transistor 100 shown in FIG. 12(A) corresponds to a cross-sectional view of the section taken along the line X1-X2 shown in FIG. 12(D). 12(A) corresponds to a cross-sectional view of the section taken along the line Y1-Y2 shown in FIG. In order to avoid complication, some of the components of the transistor 100 (gate insulator) The illustration omits the insulating film that functions as an insulating film. The channel length direction and the direction of the cutting line Y1-Y2 may be referred to as the channel width direction. In the top view of the transistor, the constituent elements are shown in the following drawings as in FIG. In some cases, some elements may be omitted from the illustration.

[0188] Note that the transistor 100 can be used in the display device described in Embodiment 1.

[0189] For example, when the transistor 100 is used as the transistor MA, the substrate 102 is The conductive film 104 is laminated to the conductive film 704, and the insulating film 106 and The stacked film of the oxide semiconductor film 108 and the insulating film 107 is formed as a semiconductor film 718. The conductive film Connect the conductive film 112a to the conductive film 712A, the conductive film 112b to the conductive film 712B, the insulating films 114 and the laminated film of the insulating films 116 to the insulating film 721A, and the insulating film 118 to the insulating film 721B, respectively. They can be rewritten.

[0190] The transistor 100 includes a conductive film 104 that functions as a gate electrode on a substrate 102, the substrate 102 and an insulating film 106 on the conductive film 104, an insulating film 107 on the insulating film 106, and an insulating film 107 and an oxide semiconductor film 108, a conductive film 112a that functions as a source electrode electrically connected to the oxide semiconductor film 108, and a drain electrode and a conductive film 112b that functions as an electrode electrically connected to the oxide semiconductor film 108. Further, on the transistor 100, more specifically, insulating films 114, 116, and an insulating film 118 are provided on the conductive films 112a, 112b, and the oxide semiconductor film 108. The insulating films 114, 116, 118 have a function as a protective insulating film of the transistor 100.

[0191] In addition, the oxide semiconductor film 108 includes a first oxide semiconductor film 108a on the side of the conductive film 104 that functions as a gate electrode, and a second oxide semiconductor film 108 b on the first oxide semiconductor film 108a. Further, the insulating films 106 and 107 have a function as a gate insulating film of the transistor 100.

[0192] As the oxide semiconductor film 108, In-M (where M represents Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf) oxide, In-M-Zn oxide can be used. In particular, it is preferable to use In-M-Zn oxide as the oxide semiconductor film 108.

[0193] ​​Further, the first oxide semiconductor film 108a has a first region where the atomic ratio of In is larger than the atomic ratio of M. Further, the second oxide semiconductor film 108b has a second region where the atomic ratio of In is smaller than that of the first oxide semiconductor film 108a. Further, the second region has a portion thinner than the first region.

[0194] By having the first region in the first oxide semiconductor film 108a where the atomic ratio of In is larger than the atomic ratio of M, the field-effect mobility (simply referred to as mobility or μFE in some cases) of the transistor 100 can be increased. Specifically, the field-effect mobility of the transistor 100 can exceed 10 cm / Vs. 2

[0195] For example, by using the transistor with the above-described high field-effect mobility as a gate driver (specifically, a demultiplexer connected to the output terminal of the shift register included in the gate driver) for generating a gate signal, a semiconductor device or a display device with a narrow frame width (also referred to as a narrow-frame) can be provided.

[0196] On the other hand, by using the first oxide semiconductor film 108a having the first region where the atomic ratio of In is larger than the atomic ratio of M, the electrical characteristics of the transistor 100 are likely to vary when irradiated with light. However, in the semiconductor device according to one aspect of the present invention, the second oxide semiconductor film 108b is formed on the first oxide semiconductor film 108 a. Further, the film thickness of the channel formation region of the second oxide semiconductor film 108b is smaller than the film thickness of the first oxide semiconductor film 108a.

[0197] Further, the second oxide semiconductor film 108b has a smaller atomic ratio of In than the first oxide semiconductor film 108a. Since it has a second region with a smaller sub-number ratio, the Eg is larger than that of the first oxide semiconductor film 108a. Therefore, the oxide semiconductor film 108, which has a laminated structure of the first oxide semiconductor film 108a and the second oxide semiconductor film 108 b, has higher resistance to the photo-negative bias stress test. Becomes high.

[0198] By using the oxide semiconductor film having the above configuration, the light absorption yield of the oxide semiconductor film 108 during light irradiation can be reduced. Therefore, the electrical characteristic variations of the transistor 100 during light irradiation can be suppressed. Further, in the semiconductor device according to one aspect of the present invention, Since the insulating film 114 or the insulating film 116 contains excess oxygen, the electrical characteristic variations of the transistor 100 during light irradiation can be further suppressed.

[0199] Here, the oxide semiconductor film 108 will be described in detail with reference to FIG. 12(B).

[0200] FIG. 12(B) is an enlarged cross-sectional view of the vicinity of the oxide semiconductor film 108 in the cross-section of the transistor 100 shown using FIG. 12(A).

[0201] In FIG. 12(B), the film thickness of the first oxide semiconductor film 108a is denoted as t1, and the film thicknesses of the second oxide semiconductor films 108b are denoted as t2-1 and t2-2, respectively. Since the second oxide semiconductor film 108b is provided on the first oxide semiconductor film 108a, when the conductive films 112a and 112b are formed, the first oxide semiconductor film 108a is not exposed to an etching gas or an etching solution or the like. Therefore, in the first oxide semiconductor film 108a, there is no or extremely little film reduction. On the other hand, in the second oxide semiconductor In the conductor film 108b, when the conductive films 112a and 112b are formed, the second oxide The portion of the semiconductor film 108b that does not overlap with the conductive films 112a and 112b is etched to form a concave portion That is, the film thickness of the region where the second oxide semiconductor film 108b overlaps with the conductive films 112a and 112b is t2-1, and the film thickness of the region where the second oxide semiconductor film 108b does not overlap with the conductive films 112a and 112b is t2-2.

[0202] The relationship between the film thicknesses of the first oxide semiconductor film 108a and the second oxide semiconductor film 108b is preferably t2- 1>t1>t2-2. By setting such a film thickness relationship, it is possible to obtain a transistor having a high field-effect mobility and a small variation in the threshold voltage when irradiated with light.

[0203] In addition, when oxygen deficiency is formed in the oxide semiconductor film 108 included in the transistor 100, carriers, that is, electrons, are generated, and the transistor tends to have normally-on characteristics. Therefore, reducing the oxygen deficiency in the oxide semiconductor film 108, particularly the oxygen deficiency in the first oxide semiconductor film 108a is also important for obtaining stable transistor characteristics. Therefore, in the configuration of the transistor according to one aspect of the present invention, excess oxygen is introduced into the insulating film on the oxide semiconductor film 108, here, the insulating film 114 and / or the insulating film 116 on the oxide semiconductor film 108, so that oxygen is transferred from the insulating film 114 and / or the insulating film 116 into the oxide semiconductor film 108 to compensate for the oxygen deficiency in the oxide semiconductor film 108, particularly in the first oxide semiconductor film 108a. This is a feature.

[0204] Note that, as the insulating films 114 and 116, regions containing oxygen in excess of the stoichiometric composition​​​​​​​​​ It is more preferable to have an (oxygen-excess region). In other words, the insulating films 114 and 116 are insulating films capable of releasing oxygen. Note that to provide an oxygen-excess region in the insulating films 114 and 116 for example, oxygen is introduced into the insulating films 114 and 116 after film formation to form an oxygen-excess region . As a method for introducing oxygen, an ion implantation method, an ion doping method, a plasma ion merging ion implantation method, plasma treatment, or the like can be used.

[0205] Also, in order to compensate for oxygen vacancies in the first oxide semiconductor film 108a, it is preferable to reduce the film thickness in the vicinity of the channel formation region of the second oxide semiconductor film 108b. Therefore, the relationship t2-2 < t1 may be satisfied. For example, the film thickness in the vicinity of the channel formation region of the second oxide semiconductor film 108b is preferably 1 nm or more and 20 nm or less, more preferably , 3 nm or more and 10 nm or less.

[0206] Hereinafter, other components included in the semiconductor device of this embodiment will be described in detail.

[0207] 《Substrate》 There are no major restrictions on the material of the substrate 102, etc., but it is necessary to have at least heat resistance sufficient to withstand subsequent heat treatment. For example, a glass substrate, a ceramic substrate, a quartz substrate, a sapphire substrate, etc. may be used as the substrate 102. Also, a single crystal semiconductor substrate, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, an SOI substrate, etc. made of silicon or silicon carbide can be applied, and those with semiconductor elements provided thereon may be used as the substrate 102.

[0208] ​​​​​​​​《Conductive Films Functioning as Gate Electrodes, Source Electrodes, and Drain Electrodes》 A conductive film 104 functioning as a gate electrode and a conductive film 112a functioning as a source electrode , and a conductive film 112b functioning as a drain electrode may be formed using a metal element selected from chromium (Cr), copper (Cu ), aluminum (Al), gold (Au), silver (Ag), zinc (Zn), molybdenum (Mo ), tantalum (Ta), titanium (Ti), tungsten (W), manganese (Mn), nickel (Ni), iron (Fe), cobalt (Co), an alloy containing the above-described metal element as a component, or an alloy combining the above-described metal elements, etc., respectively. They can be formed using an alloy containing the above-described metal element as a component, or an alloy combining the above-described metal elements, etc. respectively.

[0209] In addition, the conductive films 104, 112a, and 112b may have a single-layer structure or a laminated structure of two or more layers. For example, a single-layer structure of an aluminum film containing silicon, a two-layer structure in which a titanium film is laminated on an aluminum film, a two-layer structure in which a titanium film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a tantalum nitride film or a tungsten nitride film, a three-layer structure in which a titanium film is formed, an aluminum film is laminated on the titanium film, and a titanium film is further formed thereon, etc. Also, an alloy film or a nitride film in which one or more selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium are combined with aluminum may be used. For example, a single-layer structure of an aluminum film containing silicon, a two-layer structure in which a titanium film is laminated on an aluminum film, a two-layer structure in which a titanium film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a tantalum nitride film or a tungsten nitride film, a three-layer structure in which a titanium film is formed, an aluminum film is laminated on the titanium film, and a titanium film is further formed thereon, etc. Also, an alloy film or a nitride film in which one or more selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium are combined with aluminum may be used. a two-layer structure in which a titanium film is laminated on an aluminum film, a two-layer structure in which a titanium film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a tantalum nitride film or a tungsten nitride film, a three-layer structure in which a titanium film is formed, an aluminum film is laminated on the titanium film, and a titanium film is further formed thereon, etc. Also, an alloy film or a nitride film in which one or more selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium are combined with aluminum may be used. a two-layer structure in which a tungsten film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a tantalum nitride film or a tungsten nitride film, a three-layer structure in which a titanium film is formed, an aluminum film is laminated on the titanium film, and a titanium film is further formed thereon, etc. Also, an alloy film or a nitride film in which one or more selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium are combined with aluminum may be used. a two-layer structure in which a tungsten film is laminated on a tantalum nitride film or a tungsten nitride film, a three-layer structure in which a titanium film is formed, an aluminum film is laminated on the titanium film, and a titanium film is further formed thereon, etc. Also, an alloy film or a nitride film in which one or more selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium are combined with aluminum may be used. a three-layer structure in which a titanium film is formed, an aluminum film is laminated on the titanium film, and a titanium film is further formed thereon, etc. Also, an alloy film or a nitride film in which one or more selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium are combined with aluminum may be used. a single or a plurality of those selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium may be combined, or an alloy film or a nitride film may be used. respectively.

[0210] In addition, the conductive films 104, 112a, and 112b may contain indium tin oxide, indium oxide containing tungsten oxide , indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide , indium tin oxide containing titanium oxide, indium zinc oxide, It is also possible to apply a conductive material having translucency, such as indium tin oxide to which silicon oxide is added. It can also be used.

[0211] In addition, a Cu-X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti) may be applied to the conductive films 104, 112a, and 112b. By using the Cu-X alloy film, it can be processed in a wet etching process, so that it is possible to suppress the manufacturing cost. r, Fe, Co, Mo, Ta, or Ti) may be applied. By using the Cu-X alloy film, it can be processed in a wet etching process, so that it is possible to suppress the manufacturing cost. It becomes possible. It becomes possible.

[0212] 《Insulating film functioning as gate insulating film》 As the insulating films 106 and 107 that function as the gate insulating film of the transistor 100, insulating films containing one or more of a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, a hafnium oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film can be used respectively by a plasma enhanced chemical vapor deposition (PECVD) method, a sputtering method, or the like. Note that a single-layer insulating film selected from the above materials or an insulating film having three or more layers may be used without forming a laminated structure of the insulating films 106 and 107. Vapor Deposition)) method, a sputtering method, or the like, insulating films containing one or more of a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, a hafnium oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film can be used respectively. Vapor Deposition)) method, a sputtering method, or the like, insulating films containing one or more of a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, a hafnium oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film can be used respectively. membrane, silicon oxynitride membrane, silicon nitride oxide membrane, silicon nitride membrane, aluminum oxide membrane, hafnium oxide membrane, yttrium oxide membrane, zirconium oxide membrane, gallium oxide membrane, tantalum oxide membrane, magnesium oxide membrane, lanthanum oxide membrane, cerium oxide membrane, and neodymium oxide membrane oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film can be used respectively. Note that a single-layer insulating film selected from the above materials or an insulating film having three or more layers may be used without forming a laminated structure of the insulating films 106 and 107. membrane, or an insulating film having three or more layers selected from the above materials may be used without forming a laminated structure of the insulating films 106 and 107. It may also be used.

[0213] In addition, the insulating film 106 has a function as a blocking film that suppresses oxygen permeation. For example, when excessive oxygen is supplied into the insulating films 107, 114, 116, and / or the oxide semiconductor film 108, the insulating film 106 can suppress oxygen permeation. For example, when excessive oxygen is supplied into the insulating films 107, 114, 116, and / or the oxide semiconductor film 108, the insulating film 106 can suppress oxygen permeation. When supplied, the insulating film 106 can suppress oxygen permeation.

[0214] Note that the insulating film 107 that contacts with the oxide semiconductor film 108 functioning as the channel formation region of the transistor 100 is preferably an oxide insulating film, and more preferably has a region containing oxygen in excess of the stoichiometric composition (oxygen-excess region). In other words, the insulating film 107 is an insulating film capable of releasing oxygen. To provide an oxygen-excess region in the insulating film 107, for example, the insulating film 107 may be formed in an oxygen atmosphere. Alternatively, oxygen may be introduced into the insulating film 107 after film formation to form an oxygen-excess region. As a method of introducing oxygen, an ion implantation method, an ion doping method, a plasma immersion ion implantation method, a plasma treatment, or the like can be used. In this embodiment, a silicon nitride film is formed as the insulating film 106, and a silicon oxide film is formed as the insulating film 107. The silicon nitride film has a higher relative permittivity than the silicon oxide film, and since the film thickness required to obtain the same capacitance as the silicon oxide film is large, including the silicon nitride film as the gate insulating film of the transistor 150 can physically thicken the insulating film. Therefore, it is possible to suppress a decrease in the breakdown voltage of the transistor 100, and further improve the breakdown voltage to suppress electrostatic breakdown of the transistor 100. 《Oxide Semiconductor Film》 As the oxide semiconductor film 108, the materials shown above can be used. When the oxide semiconductor film 108 is In-M-Zn oxide, the atomic number ratio of the metal elements of the sputtering target used for forming the In-M-Zn oxide is In≥M, Zn≥M.

[0215]

[0216]

[0217] It is preferable to satisfy this. As the atomic ratio of the metal elements of such a sputtering target is, In:M:Zn = 1:1:1, In:M:Zn = 1:1:1.2, In:M:Zn = 2:1:3, In:M:Zn = 3:1:2, In:M:Zn = 4:2:4.1 are preferable .

[0218] Further, when the oxide semiconductor film 108 is an In-M-Zn oxide, it is preferable to use a target containing polycrystalline In-M-Zn oxide as the sputtering target. By using a target containing polycrystalline In-M-Zn oxide, it becomes easier to form the oxide semiconductor film 108 having crystallinity. Note that the atomic ratio of the oxide semiconductor film 108 to be formed is each, with an error including a fluctuation of plus or minus 40% of the atomic ratio of the metal elements contained in the above sputtering target. For example, when using a sputtering target with an atomic ratio of In:Ga:Zn = 4:2:4.1, the atomic ratio of the oxide semiconductor film 108 to be formed may be in the vicinity of In:Ga:Zn = 4:2:3. minus For example, as the first oxide semiconductor film 108a, it may be formed using the above sputtering targets such as In:M:Zn = 2:1:3, In:M:Zn = 3:1:2, In:M:Zn = 4:2:4.1. Also, as the second oxide semiconductor film 108b, it may be formed using the above In:M:Zn = 1:1:1, In:M:Zn = 1:1:1.2, etc. Note that as the atomic ratio of the metal elements of the sputtering target used for the second oxide semiconductor film 108b, it is not necessary to satisfy In≧M and Zn≧M, and a composition satisfying In≧M and Zn<M may be used. Specifically, In:M:Zn = 1:3:2, etc. can be mentioned.

[0219] For example, as the first oxide semiconductor film 108a, it may be formed using the above sputtering targets such as In:M:Zn = 2:1:3, In:M:Zn = 3:1:2, In:M:Zn = 4:2:4.1, etc. Also, as the second oxide semiconductor film 108b, it may be formed using the above In:M:Zn = 1:1:1, In:M:Zn = 1:1:1.2, etc. Note that as the atomic ratio of the metal elements of the sputtering target used for the second oxide semiconductor film 108b, it is not necessary to satisfy In≧M and Zn≧M, and a composition satisfying In≧M and Zn<M may be used. Specifically, In:M:Zn = 1:3:2, etc. can be mentioned. For the atomic ratio of the metal elements of the sputtering target used for the second oxide semiconductor film 108b, it is not necessary to satisfy In≧M and Zn≧M, and a composition satisfying In≧M and Zn<M may be used. Specifically, examples include In:M:Zn = 1:3:2. ​

[0220] In addition, the oxide semiconductor film 108 has an energy gap of 2 eV or more, preferably 2.5 eV or more, more preferably 3 eV or more. By using such an oxide semiconductor with a wide energy gap, the off-current of the transistor 100 can be reduced. In particular, for the first oxide semiconductor film 108a, an oxide semiconductor film with an energy gap of 2 eV or more, preferably 2 eV or more and 3.0 eV or less, is used, and for the second oxide semiconductor film 108b, an oxide semiconductor film with an energy gap of 2.5 eV or more and 3.5 eV or less is preferably used. In addition, it is preferable that the energy gap of the second oxide semiconductor film 108b is larger than that of the first oxide semiconductor film 108a.

[0221] In addition, the thicknesses of the first oxide semiconductor film 108a and the second oxide semiconductor film 108b are each 3 nm or more and 200 nm or less, preferably 3 nm or more and 100 nm or less, more preferably 3 nm or more and 50 nm or less. It is preferable to satisfy the above-described film thickness relationship.

[0222] In addition, as the second oxide semiconductor film 108b, an oxide semiconductor film with a low carrier density is used. For example, the second oxide semiconductor film 108b has a carrier density of 1×10 17 / cm 3 or less, preferably 1×10 15 / cm 3 or less, more preferably 1×10 13 / cm 3 or less, even more preferably 1×10 or less, and most preferably 1×10 11 / cm 3 or less.

[0223] Hydrogen contained in the oxide semiconductor film reacts with oxygen bonded to metal atoms to form water, and at the same time, oxygen vacancies are formed in the lattice from which oxygen has desorbed (or the portion from which oxygen has desorbed). Due to the entry of hydrogen into the oxygen vacancies, electrons, which are carriers, may be generated. Also, a part of the hydrogen may combine with oxygen bonded to metal atoms to generate electrons, which are carriers. Therefore, a transistor using an oxide semiconductor film containing hydrogen tends to have normally-on characteristics. For this reason, it is preferable that the hydrogen content in the oxide semiconductor film 108 is reduced as much as possible. Specifically, in the oxide semiconductor film 108, the hydrogen concentration obtained by SIMS analysis is 2×10 atoms / cm or less, preferably 5×10 20 atoms / cm 3 or less, more preferably 1×10 19 atoms / cm 3 or less, 5×10 19 atoms / cm 3 or less, preferably 1×10 18 atoms / cm 3 or less, preferably 1×10 18 atoms / cm 3 or less, more preferably 5×10 17 atoms / cm 3 or less, still more preferably 1×10 16 atoms / cm 3 or less, and so on.

[0224] In addition, it is preferable that the first oxide semiconductor film 108a has a portion with a lower hydrogen concentration than the second oxide semiconductor film 108b. By having a portion with a lower hydrogen concentration in the first oxide semiconductor film 108a than in the second oxide semiconductor film 108b, a highly reliable semiconductor device can be obtained.

[0225] ​​In the first oxide semiconductor film 108a, silicon or carbon, which is one of the Group 14 elements, is included, oxygen deficiency increases in the first oxide semiconductor film 108a, and it becomes n-type. Therefore, the concentration of silicon or carbon in the first oxide semiconductor film 108a and the concentration of silicon or carbon (the concentration obtained by SIMS analysis) near the interface with the first oxide semiconductor film 108a are set to 2×10 atoms / cm 18 or less, preferably 2×10 3 atoms / cm 17 or less. cm 3 or less.

[0226] In addition, in the first oxide semiconductor film 108a, the concentration of an alkali metal or alkaline earth metal obtained by SIMS analysis is set to 1×10 atoms / cm 18 or less, preferably 3 2×10 atoms / cm 16 or less. When an alkali metal and an alkaline earth metal combine with an oxide semiconductor, carriers may be generated, and the off-current of the transistor may increase. 3 Therefore, it is preferable to reduce the concentration of the alkali metal or alkaline earth metal in the first oxide semiconductor film 108a. When nitrogen is included in the first oxide semiconductor film 108a, electrons as carriers are generated, the carrier density increases, and it easily becomes n-type. As a result, a transistor using an oxide semiconductor film containing nitrogen tends to have normally-on characteristics. Therefore, in the oxide semiconductor film, it is preferable that nitrogen is reduced as much as possible. For example, the nitrogen concentration obtained by SIMS analysis is 5×10 atoms / cm

[0227] In addition, when nitrogen is included in the first oxide semiconductor film 108a, electrons as carriers are generated, the carrier density increases, and it easily becomes n-type. As a result, a transistor using an oxide semiconductor film containing nitrogen tends to have normally-on characteristics. Therefore, in the oxide semiconductor film, it is preferable that nitrogen is reduced as much as possible. For example, the nitrogen concentration obtained by SIMS analysis is 5×10 atoms / cm or less, preferably, for example, the nitrogen concentration obtained by SIMS analysis is 5×10 atoms / cm 18 or less. 3It is preferable to be as follows.

[0228] "Insulating Film Functioning as a Protective Insulating Film for a Transistor" The insulating films 114 and 116 have a function of supplying oxygen to the oxide semiconductor film 108. Also, the insulating film 118 has a function as a protective insulating film for the transistor 100. Also, the insulating films 114 and 116 contain oxygen. Also, the insulating film 114 is an insulating film that can transmit oxygen. Note that the insulating film 114 also functions as a damage relaxation film for the oxide semiconductor film 108 when forming the insulating film 116 to be formed later.

[0229] As the insulating film 114, silicon oxide, silicon oxynitride, etc. with a thickness of 5 nm or more and 150 nm or less, preferably 5 nm or more and 50 nm or less can be used.

[0230] Also, it is preferable that the insulating film 114 has a small amount of defects. Typically, by ESR measurement, the spin density of the signal appearing at g = 2.001 derived from the dangling bonds of silicon is 3×10 17 spins / cm 3 or less. This is because if the defect density contained in the insulating film 114 is high, oxygen binds to the defects, and the oxygen permeation amount in the insulating film 114 decreases.

[0231] Note that in the insulating film 114, all the oxygen that enters the insulating film 114 from the outside does not move outside the insulating film 114, and there is also oxygen remaining in the insulating film 114. Also, oxygen enters the insulating film 114, and the oxygen contained in the insulating film 114 moves outside the insulating film 114, so oxygen movement may occur in the insulating film 114. Oxygen permeates through the insulating film 114. When the oxide insulating film 116 is formed, the insulating film 114 is separated from the insulating film 116. The released oxygen can be transferred to the oxide semiconductor film 108 through the insulating film 114.

[0232] The insulating film 114 is formed using an oxide insulating film with a low density of states due to nitrogen oxides. Note that the density of states due to the nitrogen oxide can be determined by the valence charge of the oxide semiconductor film. The energy at the top of the nucleus (E v_os ) and the energy of the bottom of the conduction band of the oxide semiconductor film ( E c_os ) may be formed between the insulating film and the insulating layer. Silicon oxynitride film with low nitrogen oxide emission or aluminum oxynitride film with low nitrogen oxide emission A film such as a cellulose nitrate film can be used.

[0233] In addition, a silicon oxynitride film that emits a small amount of nitrogen oxides is This membrane releases more ammonia than nitrogen oxides, and typically The emission amount is 1×10 18 pieces / cm 3 5x10 or more 19 pieces / cm 3 The following is the case. The amount of Nia released is determined when the surface temperature of the film is 50°C or higher and 650°C or lower, preferably 50°C or higher and 550°C or lower. The amount released by heating at or below ℃.

[0234] The insulating film 116 is an oxide insulating film containing more oxygen than the oxygen required for the stoichiometric composition. The oxide insulating film containing more oxygen than the oxygen that satisfies the stoichiometric composition is formed by heating. Heat causes some of the oxygen to be released. Acids containing more oxygen than the stoichiometric composition The oxide insulating film has a thermal desorption spectroscopy (TDS) that converts the amount of oxygen desorbed into oxygen atoms. 1.0×10 19 atoms / cm 3 or more, preferably 3.0×10 20 atoms / c m 3 or more. The oxide insulating film has a surface temperature of the film in the above TDS of 1 A range of 00°C or higher and 700°C or lower, or 100°C or higher and 500°C or lower is preferable.

[0235] As the insulating film 116, silicon oxide, silicon oxynitride, etc. with a thickness of 30 nm or more and 500 nm or less, preferably 50 nm or more and 4 00 nm or less can be used.

[0236] In addition, since the insulating films 114 and 116 can use insulating films of the same material, the interface between the insulating film 114 and the insulating film 116 may not be clearly confirmed. Therefore, in this embodiment state, the interface between the insulating film 114 and the insulating film 116 is illustrated by a broken line. In this actual embodiment, the two-layer structure of the insulating film 114 and the insulating film 116 has been described, but this is not limited thereto, and for example, a single-layer structure of the insulating film 114 may be used.

[0237] The insulating film 118 contains nitrogen. In addition, the insulating film 118 contains nitrogen and silicon. Also The insulating film 118 has a function of blocking oxygen, hydrogen, water, alkali metals, alkaline earth metals, etc. By providing the insulating film 118, the diffusion of oxygen from the oxide semiconductor film 108 to the outside, the diffusion of oxygen contained in the insulating films 114 and 116 to the outside, and the entry of hydrogen, water, etc. from the outside into the oxide semiconductor film 108 can be prevented. As the insulating film 118 For example, a nitride insulating film can be used. Examples of the nitride insulating film include silicon nitride nitride, silicon oxynitride, aluminum nitride, aluminum oxynitride, etc. Note that oxygen to the outside, and the entry of hydrogen, water, etc. from the outside into the oxide semiconductor film 108 can be prevented. As the insulating film 118 For example, a nitride insulating film can be used. The nitride insulating film includes silicon nitride nitride, silicon oxynitride, aluminum nitride, aluminum oxynitride, etc. In addition, oxygen , instead of a nitride insulating film having a blocking effect such as hydrogen, water, an alkali metal, or an alkaline earth metal, an oxide insulating film having a blocking effect such as oxygen, hydrogen, or water may be provided. Examples of the oxide insulating film having a blocking effect such as oxygen, hydrogen, or water include aluminum oxide, aluminum oxynitride, gallium oxide, gallium oxynitride, yttrium oxide, yttrium oxynitride, hafnium oxide, hafnium oxynitride, and the like.

[0238] In addition, various films such as the conductive film, insulating film, and oxide semiconductor film described above can be formed by sputtering method or PECVD method, but can also be formed by other methods, for example, thermal CVD (Che mical Vapor Deposition) method. Examples of the thermal CVD method include MOCVD (Metal Organic Chemical Vapor Deposition) method and ALD (Atomic Layer Deposition ) method.

[0239] In the thermal CVD method, the source gas and the oxidant are simultaneously fed into the chamber, and the chamber is under atmospheric pressure or reduced pressure, and reacted near the substrate or on the substrate to deposit on the substrate to form a film.

[0240] In addition, in the ALD method, the chamber is under atmospheric pressure or reduced pressure, and the source gas for the reaction is sequentially introduced into the chamber, and the film formation may be performed by repeating the order of the gas introduction. For example, by switching each switching valve (also called a high-speed valve), two or more types of source gases are sequentially supplied to the chamber so that the first source gas does not mix with the plurality of types of source gases. Introduce an inert gas (such as argon or nitrogen) simultaneously with or after the gas, and then introduce the second raw material gas. When introducing the inert gas simultaneously, the inert gas serves as a carrier gas. Additionally, it is also possible to introduce the inert gas simultaneously when introducing the second raw material gas . Alternatively, after discharging the first raw material gas by vacuum evacuation instead of introducing the inert gas, the second raw material gas may be introduced. The first raw material gas adsorbs on the surface of the substrate to form the first layer, and reacts with the subsequently introduced second raw material gas, causing the second layer to be laminated on the first layer, thereby forming a thin film. By repeating this gas introduction sequence multiple times while controlling it until the desired thickness is achieved , a thin film with excellent step coverage can be formed. Since the thickness of the thin film can be adjusted by the number of times the gas introduction sequence is repeated, precise film thickness adjustment is possible, making it suitable for fabricating fine FETs.

[0241] Thermal CVD methods such as MOCVD and ALD can form various films such as the conductive film, insulating film, oxide semi- conductor film, and metal oxide film in the above embodiments. For example, when forming an In-Ga-ZnO film, trimethylindium, trimethylgallium, and dimethylzinc are used. The chemical formula of trimethylindium is In(CH3)₃. Also, the chemical formula of trimethylgallium is Ga(CH3)₃. And the chemical formula of dimethylzinc is Zn(CH3)₂. Moreover, it is not limited to these combinations, and triethylgallium (chemical formula Ga(C₂H₅)₃) can be used instead of trimethylgallium , and diethylzinc (chemical formula Zn(C₂H₅)₂) can be used instead of dimethylzinc .

[0242] For example, when forming an aluminum oxide film using a film forming apparatus that utilizes ALD, a solvent and a liquid containing an aluminum precursor compound (such as trimethylaluminum (TMA)) are vaporized to obtain a source gas, and two types of gases, H2O as an oxidizing agent, are used. Note that the chemical formula of trimethylaluminum is Al(CH3)3. Further, as other material liquids, tris(dimethylamide)aluminum, triisobutylaluminum, aluminum tris(2, 2,6,6-tetramethyl-3,5-heptanedionate), etc. are available.

[0243] Note that this embodiment can be appropriately combined with other embodiments shown in this specification.

[0244] (Embodiment 3) In this embodiment, another configuration having a display device according to an aspect of the present invention will be described with reference to FIG. 9.

[0245] FIG. 9(A) is a schematic diagram showing the positional relationship among a gate driver 301, a gate driver 301(2), and a common driver 303. Here, the gate driver 301(2) is a part of the function of the gate driver 301 separated therefrom. The gate driver 301(2) and the common driver 303 are formed on the gate driver 301, and at least a part of the gate driver 301(2) and at least a part of the common driver 303 overlap the gate driver 301.

[0246] The gate driver 301 is electrically connected to first wirings G(1) to G(m) and the gate driver 301(2 ), and the common driver 303 is electrically connected to first conductive films C1(1) to C1(p).

[0247] The gate driver occupies a larger area than the common driver, so the overall functionality of the gate driver The functions are separated into gate driver 301 and gate driver 301(2) and stacked. The occupied area can be reduced. The drivers 303 are preferably formed on the same plane.

[0248] FIG. 9B shows the gate driver 301, the gate driver 301(2), and the common driver 9B is a schematic cross-sectional view showing the positional relationship of the gate driver 303. A common driver 303 is formed on the gate electrode 301, and the gate electrode 302 is formed on the left side of FIG. A gate driver 301(2) is formed on the gate driver 301.

[0249] Here, the transistor 791 included in the gate driver 301 and the gate driver 301 ( 2) is electrically connected to a transistor 891 included in the Good too.

[0250] The other parts of FIG. 9 will be explained in accordance with the above-described embodiment, for example, the explanation of FIG. 2. This can be understood from the above, so the explanation will be omitted here.

[0251] (Fourth embodiment) In this embodiment, another structure including a display device according to one embodiment of the present invention will be described with reference to FIGS. I will explain.

[0252] FIG. 10A is a schematic diagram showing the positional relationship between the gate driver 301 and the common driver 303. The gate driver 301 is formed on the common driver 303. The gate driver 301 is electrically connected to the first wirings G(1) to G(m), and The common driver 303 is electrically connected to the first conductive films C1(1) to C1(p).

[0253] FIG. 10(B) is a schematic cross-sectional view at the position where the common driver 303 and the first conductive films C1(1) to C1(p) are electrically connected. FIG. 10(C) is a schematic cross-sectional view at the position where the gate driver 301 and the first wirings G(1) to G(m) are electrically connected. As shown in FIG. 10(A), the stacking order of the gate driver 301 and the common driver 303, and the stacking order of the first wirings G(1) to G(m) and the first conductive films C1(1) to C1(p) are reversed. Therefore, in order for the common driver 303 and the first conductive films C1(1) to C1(p) to be electrically connected, it is necessary to provide an opening in a part of the gate driver 301. For example, as shown in FIG. 10(B), openings are provided in a part of the insulating film 828, the insulating film 812B, and the insulating film 728, and the first conductive film C1(g) is formed, so that the conductive film 712B and the first conductive film C1(g) can be electrically connected.

[0254] As shown in FIG. 10(A), the stacking order of the gate driver 301 and the common driver 303, and the stacking order of the first wirings G(1) to G(m) and the first conductive films C1(1) to C1(p) are reversed. Therefore, in order for the common driver 303 and the first conductive films C1(1) to C1(p) to be electrically connected, it is necessary to provide an opening in a part of the gate driver 301. For example, as shown in FIG. 10(B), openings are provided in a part of the insulating film 828, the insulating film 812B, and the insulating film 728, and the first conductive film C1(g) is formed, so that the conductive film 712B and the first conductive film C1(g) can be electrically connected. Similarly, in order for the gate driver 301 and the first wirings G(1) to G(m) to be electrically connected, it is necessary to provide an opening in a part of the common driver 303. An example of a schematic cross-sectional view at a position different from FIG. 10(B) is shown in FIG. 10(C). As shown in FIG. 10(C), openings are provided in a part of the insulating film 806, the insulating film 728, the insulating film 721A, and the insulating film 706, and the conductive film 812B is formed, so that the conductive film 812B and the first wiring G(i) can be electrically connected.

[0255] Similarly, in order for the gate driver 301 and the first wirings G(1) to G(m) to be electrically connected, it is necessary to provide an opening in a part of the common driver 303. An example of a schematic cross-sectional view at a position different from FIG. 10(B) is shown in FIG. 10(C). As shown in FIG. 10(C), openings are provided in a part of the insulating film 806, the insulating film 728, the insulating film 721A, and the insulating film 706, and the conductive film 812B is formed, so that the conductive film 812B and the first wiring G(i) can be electrically connected. Therefore, in order for the common driver 303 and the first conductive films C1(1) to C1(p) to be electrically connected, it is necessary to provide an opening in a part of the gate driver 301. For example, as shown in FIG. 10(B), openings are provided in a part of the insulating film 828, the insulating film 812B, and the insulating film 728, and the first conductive film C1(g) is formed, so that the conductive film 712B and the first conductive film C1(g) can be electrically connected. 0(B), openings are provided in a part of the insulating film 828, the insulating film 812B, and the insulating film 728, and the first conductive film C1(g) is formed, so that the conductive film 712B and the first conductive film C1(g) can be electrically connected. Similarly, in order for the gate driver 301 and the first wirings G(1) to G(m) to be electrically connected, it is necessary to provide an opening in a part of the common driver 303. An example of a schematic cross-sectional view at a position different from FIG. 10(B) is shown in FIG. 10(C). As shown in FIG. 10(C), openings are provided in a part of the insulating film 806, the insulating film 728, the insulating film 721A, and the insulating film 706, and the conductive film 812B is formed, so that the conductive film 812B and the first wiring G(i) can be electrically connected. Therefore, in order for the common driver 303 and the first conductive films C1(1) to C1(p) to be electrically connected, it is necessary to provide an opening in a part of the gate driver 301. For example, as shown in FIG. 10(B), openings are provided in a part of the insulating film 828, the insulating film 812B, and the insulating film 728, and the first conductive film C1(g) is formed, so that the conductive film 712B and the first conductive film C1(g) can be electrically connected.

[0256] Similarly, in order for the gate driver 301 and the first wirings G(1) to G(m) to be electrically connected, it is necessary to provide an opening in a part of the common driver 303. An example of a schematic cross-sectional view at a position different from FIG. 10(B) is shown in FIG. 10(C). As shown in FIG. 10(C), openings are provided in a part of the insulating film 806, the insulating film 728, the insulating film 721A, and the insulating film 706, and the conductive film 812B is formed, so that the conductive film 812B and the first wiring G(i) can be electrically connected. Therefore, in order for the common driver 303 and the first conductive films C1(1) to C1(p) to be electrically connected, it is necessary to provide an opening in a part of the gate driver 301. For example, as shown in FIG. 10(B), openings are provided in a part of the insulating film 828, the insulating film 812B, and the insulating film 728, and the first conductive film C1(g) is formed, so that the conductive film 712B and the first conductive film C1(g) can be electrically connected. Similarly, in order for the gate driver 301 and the first wirings G(1) to G(m) to be electrically connected, it is necessary to provide an opening in a part of the common driver 303. An example of a schematic cross-sectional view at a position different from FIG. 10(B) is shown in FIG. 10(C). As shown in FIG. 10(C), openings are provided in a part of the insulating film 806, the insulating film 728, the insulating film 721A, and the insulating film 706, and the conductive film 812B is formed, so that the conductive film 812B and the first wiring G(i) can be electrically connected. 6, the insulating film 728, the insulating film 721A, and the insulating film 706, and the conductive film 812B is formed, so that the conductive film 812B and the first wiring G(i) can be electrically connected. Therefore, in order for the common driver 303 and the first conductive films C1(1) to C1(p) to be electrically connected, it is necessary to provide an opening in a part of the gate driver 301. For example, as shown in FIG. 10(B), openings are provided in a part of the insulating film 828, the insulating film 812B, and the insulating film 728, and the first conductive film C1(g) is formed, so that the conductive film 712B and the first conductive film C1(g) can be electrically connected. Similarly, in order for the gate driver 301 and the first wirings G(1) to G(m) to be electrically connected, it is necessary to provide an opening in a part of the common driver 303. An example of a schematic cross-sectional view at a position different from FIG. 10(B) is shown in FIG. 10(C). As shown in FIG. 10(C), openings are provided in a part of the insulating film 806, the insulating film 728, the insulating film 721A, and the insulating film 706, and the conductive film 812B is formed, so that the conductive film 812B and the first wiring G(i) can be electrically connected.

[0257] Regarding the description of other parts of FIG. 10, it can be understood from the description of the above-described embodiment, for example, the description of FIG. 2. Therefore, the description is omitted here.

[0258] (Embodiment 5) In this embodiment, another configuration having a display device according to an aspect of the present invention will be described with reference to FIG. 11. Hereinafter, it will be described.

[0259] FIG. 11(A) is a schematic diagram showing the positional relationship among the gate driver 301, the gate driver 301(2), and the common driver 303. Here, the gate driver 301(2) is a part of the functions of the gate driver 301 separated therefrom. The gate driver 301 is formed on the gate driver 301(2) and the common driver 303, and at least a part of the gate driver 301(2) and at least a part of the common driver 303 overlap the gate driver 301. Here, the gate driver 301(2) is a part of the functions of the gate driver 301 separated therefrom. The gate driver 301 is formed on the gate driver 301(2) and the common driver 303, and at least a part of the gate driver 301(2) and at least a part of the common driver 303 overlap the gate driver 301. The gate driver 301 is formed on the gate driver 301(2) and the common driver 303, and at least a part of the gate driver 301(2) and at least a part of the common driver 303 overlap the gate driver 301. The gate driver 301(2) and at least a part of the common driver 303 overlap the gate driver 301. The gate driver 301(2) and at least a part of the common driver 303 overlap the gate driver 301.

[0260] The gate driver 301 is electrically connected to the first wirings G(1) to G(m) and the gate driver 301(2), and the common driver 303 is electrically connected to the first conductive films C1(1) to C1(p). The gate driver 301 is electrically connected to the first wirings G(1) to G(m) and the gate driver 301(2), and the common driver 303 is electrically connected to the first conductive films C1(1) to C1(p). The gate driver 301 is electrically connected to the first wirings G(1) to G(m) and the gate driver 301(2), and the common driver 303 is electrically connected to the first conductive films C1(1) to C1(p).

[0261] Since the gate driver has a larger occupied area than the common driver, the functions of the entire gate driver are separated into the gate driver 301 and the gate driver 301(2) and stacked, whereby the occupied area can be reduced. Here, the gate driver 301(2) and the common driver 303 are preferably formed on the same plane. Since the gate driver has a larger occupied area than the common driver, the functions of the entire gate driver are separated into the gate driver 301 and the gate driver 301(2) and stacked, whereby the occupied area can be reduced. Here, the gate driver 301(2) and the common driver 303 are preferably formed on the same plane. Since the gate driver has a larger occupied area than the common driver, the functions of the entire gate driver are separated into the gate driver 301 and the gate driver 301(2) and stacked, whereby the occupied area can be reduced. Here, the gate driver 301(2) and the common driver 303 are preferably formed on the same plane. The gate driver 301(2) and the common driver 303 are preferably formed on the same plane.

[0262] FIG. 11(B) is a cross-sectional schematic diagram at the position where the common driver 303 and the first conductive films C1(1) to C1(p) are electrically connected. FIG. 11(B) is a cross-sectional schematic diagram at the position where the common driver 303 and the first conductive films C1(1) to C1(p) are electrically connected.

[0263] As shown in Fig. 11(A), the stacking order of the gate driver 301 and the common driver 303 and , the stacking order of the first wirings G(1) to G(m) and the first conductive films C1(1) to C1(p) are reversed.

[0264] Therefore, in order for the common driver 303 and the first conductive films C1(1) to C1(p) to be electrically connected, it is necessary to provide an opening in a part of the gate driver 301. For example, by adopting the configuration shown in Fig. 1 1(B), the conductive film 712B and the first conductive film C1(g) can be electrically connected. 1(B), the conductive film 712B and the first conductive film C1(g) can be electrically connected. connected.

[0265] Regarding the description of other parts of Fig. 11, since it can be understood from the description of the above embodiments, for example, the descriptions of Fig. 2, Fig. 9 , and Fig. 10, the description is omitted here.

[0266] (Embodiment 6) In this embodiment, another configuration of the display device having one aspect of the present invention will be described with reference to Fig. 13. Regarding the same configurations as those in Embodiments 1 to 5, detailed descriptions are omitted. omitted.

[0267] Fig. 13 is a cross-sectional view for explaining the configuration of a display device 600 according to one aspect of the present invention. The display device 60 0 includes a display element 757, and transistors MA, tran sistors MD1, and transistor MD2 that are electrically connected to the display element 757. Further, the display device 600 includes a display element 61 5, and transistors ME1, ME2, and transistor ME3 that are electrically connected to the display element 615.

[0268] A reflective liquid crystal element can be used for the display element 757.

[0269] The display element 615 has a function of emitting light, that is, a function of emitting light. Therefore, the display element 615 may be reinterpreted as a light-emitting element. For example, as the display element 615, a configuration using an electroluminescence element (also referred to as an EL element) or a configuration using a light-emitting diode may be employed.

[0270] Thus, display elements having different functions are used for the display element 757 and the display element 615. For example, one of the display elements may be a reflective liquid crystal element and the other may be a transmissive EL element, thereby enabling a display device with excellent convenience. Also, in an environment where external light is bright, the reflective liquid crystal element is utilized, and in an environment where external light is dim, the transmissive EL element is used, resulting in a display device with low power consumption and high display quality.

[0271] The display device 600 shown in FIG. 13 includes a transistor MA, transistors MD1, MD2, ME1, ME2, ME3, a display element 757, a display element 615, an insulating film 701, a colored layer 613, and a colored layer CF, etc., between a substrate 710 and a substrate 770. The substrate 770 and the insulating film 701 are adhered via a sealing material 730. The substrate 710 and the insulating film 701 are adhered via an adhesive layer 619.

[0272] The display element 757 has a laminated structure in which a conductive film 751 functioning as an electrode, a layer 753 containing a liquid crystal material, and a conductive film 755 are laminated. An alignment film AF1 is provided between the conductive film 751 and the layer 753 containing the liquid crystal material. An alignment film AF2 is provided between the layer 753 containing the liquid crystal material and the insulating film 701. ​​​​​​​​​​​

[0273] In the display element 757, the conductive film 755 has a function of reflecting visible light. On the substrate 770 side The light incident from is polarized by the optical film 710P, passes through the layer 753 containing the liquid crystal material, is reflected by the conductive film 755. Then it passes through the layer 753 containing the liquid crystal material and the coloring layer CF again, and reaches the optical film 710P. At this time, the orientation of the liquid crystal can be controlled by the voltage applied to the electrode 751, and the optical modulation of the light can be controlled. That is, the intensity of the light emitted through the optical film 71 0P can be controlled. Also, the light is absorbed by the coloring layer CF for light outside a specific wavelength region, so that the extracted light exhibits, for example, red light. light. light.

[0274] Also, an opening 761 is provided in the light-shielding layer BM in the region overlapping the display element 615.

[0275] The display element 615, the transistors ME1, ME2, and ME3 are electrically connected. The transistor ME1 is a transistor that controls the selection and non-selection states of the pixel including the display element 615, and may be called a switching transistor or a selection transistor. The transistor ME2 is a transistor that controls the current flowing through the display element 615 and may be called a driving transistor. The transistor ME3 has the function of a gate driver. The transistor ME2 is a transistor that controls the current flowing through the display element 615 and may be called a driving transistor. The transistor ME3 has the function of a gate driver. The transistor ME2 is a transistor that controls the current flowing through the display element 615 and may be called a driving transistor. The transistor ME3 has the function of a gate driver. The transistor ME2 is a transistor that controls the current flowing through the display element 615 and may be called a driving transistor. The transistor ME3 has the function of a gate driver. The transistor ME3 has the function of a gate driver.

[0276] It is possible to have a terminal 617 that is electrically connected to the conductive film of the transistor ME3. For example, using the flexible printed circuit board FPC2 and the conductive member ACF2, the terminal 61 7 can be electrically connected. The signal input from the connected FPC2 to the display element 615 7 can be electrically connected. The signal input from the connected FPC2 to the display element 615 Alternatively, a potential can be supplied via terminal 617.

[0277] Also, as the structure of transistor ME1, the structure of the aforementioned transistor MA can be applied. For example, as the structure of transistors ME2 and ME3, the structure of the aforementioned transistor MD1 can be applied.

[0278] Display element 615 is a top emission type light emitting element. Display element 615 has a stacked structure in which a conductive film 601 that functions as a pixel electrode, an EL layer 605, and a conductive film 607 that functions as a common electrode are stacked in this order. The conductive film 601 is connected to the conductive film that transistor ME2 has. Transistor ME2 has a function of controlling the driving of display element 615. An insulating film 603 covers the end of the conductive film 601. The conductive film 601 contains a material that reflects visible light, and the conductive film 607 contains a material that transmits visible light. An insulating film 609 is provided covering the conductive film 607. An insulating film 611 is provided covering the insulating film 609. The insulating film 611 functions as a planarization layer. Note that the number of insulating films is not limited, and it may be a single layer or two or more layers. A coloring layer 613 is provided in contact with the insulating layer 611.

[0279]

[0280] The light emitted by display element 615 is emitted toward the substrate 770 side through the coloring layer 613, the insulating film 701, the aperture 761, etc.

[0281] Display elements 757 and 615 can exhibit various colors by changing the color of the coloring layer for each pixel. Display device 600 performs color display using display element 757. It is possible. The display device 600 can perform color display using the display element 615. It can.

[0282] Since the display device 600 forms the transistor MA for driving the display element 757 and the transistor ME2 for driving the display element 615 on different surfaces, it is easy to form them using structures and materials suitable for driving the respective display elements. For the materials that can be used for light-emitting elements, transistors, insulating layers, conductive layers, adhesive layers, connection layers, etc., reference can be made to the descriptions of Embodiments 1 to 5 respectively.

[0283]

[0284] (Embodiment 7) In this embodiment, a display module and an electronic device having a display device according to an aspect of the present invention will be described with reference to FIG. 14.

[0285] FIGS. 14(A) to 14(G) are diagrams showing electronic devices. These electronic devices can include a housing 5000, a display unit 5001, a speaker 5003, an LED lamp 5004, operation keys 500 5 (including a power switch or an operation switch), connection terminals 5006, a sensor 5007 (having a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 5008, etc. It can.

[0286] FIG. 14(A) is a mobile computer, and in addition to the above-described components, it can have a switch 5009, an infrared port 5010, etc. FIG. 14(B) is a portable device equipped with a recording medium. A type of image playback device (for example, a DVD playback device), in addition to those described above, can have a second display unit 5002, a recording medium reading unit 5011, and the like. FIG. 14(C) is a goggle type display, which, in addition to those described above, can have a second display unit 5002, a support unit 5012, earphones 5013, and the like. FIG. 14(D) is a portable game machine, which, in addition to those described above, can have a recording medium reading unit 5011, and the like. FIG. 14(E) is a digital camera with a TV reception function, which, in addition to those described above, can have an antenna 5014, a shutter button 5015, an image receiving unit 5016, and the like. FIG. 14(F) is a portable type game machine, which, in addition to those described above, can have a second display unit 5002, a recording medium reading unit 5011, and the like. FIG. 14(G) is a portable TV receiver, which, in addition to those described above, can have a charger 5017 capable of transmitting and receiving signals, and the like.

[0287] The electronic devices shown in FIGS. 14(A) to 14(G) can have various functions. For example, a function of displaying various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a function of displaying a calendar, date, or time, etc., a function of controlling processing by various software (pro grams), a wireless communication function, a function of connecting to various computer networks using the wireless communication function, a function of transmitting or receiving various data using the wireless communication function, a function of reading programs or data recorded on a recording medium and displaying them on the display unit, and the like. Furthermore, in an electronic device having a plurality of display units one display unit mainly displays image information, and another display unit mainly displays character information ​​The function to be displayed, or the function to display a stereoscopic image by displaying an image considering parallax on a plurality of display units, etc. can be provided. Further, in an electronic device having an image receiving unit, it can have a function of taking a still image, a function of taking a moving image, a function of automatically or manually correcting the taken image, a function of storing the taken image in a recording medium (external or built-in to the camera), a function of displaying the taken image on a display unit, etc. Note that the functions that the electronic device shown in FIGS. 14(A) to 14 (G) can have are not limited to these, and it can have various functions. FIG. 14(H) is a smartwatch and has a housing 7302, a display panel 7304, operation buttons 7311, 7312, connection terminals 7313, a band 7321, a buckle 7322, etc.

[0288] The display panel 7304 mounted on the housing 7302 that also serves as a bezel portion has a non-rectangular display area. Note that the display panel 7304 may have a rectangular display area. The display panel 7304 can display an icon 7305 representing the time, other icons 7306, etc.

[0289] Note that the smartwatch shown in FIG. 14(H) can have various functions. For example, a function of displaying various information (still images, moving images, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date, or time, etc., a function of controlling processing by various software (programs), a wireless communication function, a function of connecting to various computer networks using the wireless communication function, a function of transmitting or receiving various data using the wireless communication function

[0290] ​​​​​​​​A function to perform, read the program or data recorded on the recording medium, and display it on the display unit It can have functions such as

[0291] In addition, inside the housing 7302, there can be a speaker, a sensor (for measuring force, displacement, position, speed, acceleration, angular velocity degree, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, electric pressure, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone, etc. Note that the smartwatch can be manufactured by using a light-emitting element for its display panel 7304

[0292] Note that this embodiment can be appropriately combined with other embodiments shown in this specification

Explanation of Reference Numerals

[0293] AF1 Alignment film AF2 Alignment film BM Light-shielding film C Detection element C1 Conductive film C2 Conductive film CF Colored film G Gate line KB Structure MA Transistor ME Transistor MD Transistor S Signal line 100 Transistor 102 Substrate 104 Conductive film 106 Insulating film 107 Insulating film 108 Oxide semiconductor film 112a Conductive film 112b Conductive film 114 Insulating film 116 Insulating film 118 Insulating film ​​301 Gate Driver 302 Source Driver 303 Common Driver 305 Display Area 600 Display Device 601 Conductive Film 603 Insulating Film 605 EL Layer 607 Conductive Film 609 Insulating Film 611 Insulating Film 613 Coloring Layer 615 Display Element 617 Terminal 619 Adhesive Layer 700 Display Device 701 Insulating Film 702 Pixel 704 Conductive Film 706 Insulating Film 710 Substrate 710P Optical Film 711 Wiring 712 Conductive Film 718 Semiconductor Film 719 Terminal 721A Insulating Film 721B Insulating Film 724 Conductive Film 728 Insulating Film 730 Encapsulant 750 Display Element 751 Conductive Film 753 Layer Containing Liquid Crystal Material 755 Conductive Film 757 Display Element 761 Opening 770 Substrate 770P Optical Film 771 Insulating Film 780 Transistor 790 Transistor 804 Conductive Film 806 Insulating Film 812 Conductive Film 818 Semiconductor Film 821A Insulating Film 821B Insulating Film 824B Conductive Film 828 Insulating Film 830 Conductive Film 880 Transistor 890 Transistor 891 Transistor 5000 Housing 5001 Display Unit 5002 Display Unit 5003 Speaker 5004 LED Lamp 5005 Operation Key 5006 Connection Terminal 5007 Sensor 5008 Microphone 5009 Switch 5010 Infrared Port 5011 Recording Medium Reader 5012 Support Part 5013 Earphone 5014 Antenna 5015 Shutter Button 5016 Image Receiving Part 5017 Charger 7302 Housing 7304 Display Panel 7305 Icon 7306 Icon 7311 Operation Button 7312 Operation Button 7313 Connection Terminal 7321 Band 7322 Fastener

Claims

【Claim 1】 having a first drive circuit on a first substrate, having a first wiring on the first substrate, having an insulating film on the first drive circuit, having a second drive circuit on the insulating film, having a second wiring on the insulating film, the first drive circuit having a first transistor, the second drive circuit having a second transistor, a source or a drain of the first transistor being electrically connected to the first wiring, a source or a drain of the second transistor being electrically connected to the second wiring, the first transistor including a metal oxide in a channel formation region, the second transistor including a metal oxide in a channel formation region, a display device in which the first drive circuit has a region overlapping with the second drive circuit.

Images