Display device

Abstract

To provide a display device having an optical detection function.SOLUTION: A display device has a first substrate, a second substrate, a light-receiving element, a light-emitting element, a resin layer, and a light-shielding layer. The light-receiving element, the light-emitting element, the resin layer and the light-shielding layer are positioned between the first substrate and the second substrate, respectively. The light-receiving element has a first pixel electrode on the first substrate, an active layer on the first pixel electrode, and a common electrode on the active layer. The light-emitting element has a second pixel electrode on the first substrate, a first light-emitting layer on the second pixel electrode, and a common electrode on the first light-emitting layer. The resin layer and the light-shielding layer are positioned between the common electrode and the second substrate, respectively. The resin layer has a part overlapping the light-emitting element. The light-shielding layer has a part positioned between the common electrode and the resin layer. The resin layer has an opening overlapping the light-receiving element or is provided in an island shape. At least a part of light having passed through the second substrate is incident on the light-receiving element without through the resin layer.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention relates to a display device, a display module, and an electronic device. The present invention relates to a display device having a light receiving element and a light emitting element.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the semiconductor device include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, Input devices (e.g., touch sensors), input / output devices (e.g., touch panels), etc. These driving methods or manufacturing methods can be cited as examples. [Background technology]

[0003] In recent years, display devices are expected to be used in a variety of applications. For example, the use of large display devices Examples include home television equipment (also called televisions or television receivers), digital Digital Signage, PID (Public Identification Number) c Information Display) and other mobile information terminals. As a result, development of smartphones and tablet devices equipped with touch panels is underway.

[0004] As a display device, for example, a light-emitting device having a light-emitting element has been developed. Utilizing the electroluminescence (EL) phenomenon The light-emitting element (also called EL element) is easy to make thin and lightweight, and it responds quickly to input signals. It has the characteristics of being able to respond to the display device, being able to be driven by a low-voltage DC power supply, etc. For example, Patent Document 1 discloses a flexible light-emitting device to which an organic EL element is applied. An apparatus is disclosed. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-197522 Summary of the Invention [Problem to be solved by the invention]

[0006] An object of one embodiment of the present invention is to provide a display device having a light detection function. An object of one embodiment of the present invention is to provide a highly convenient display device. An object of the present invention is to provide a multifunctional display device. An object of one embodiment of the present invention is to provide a display device having high sensitivity for light detection. An object of one embodiment of the present invention is to provide a novel display device. One of the challenges is to

[0007] Note that the description of these problems does not preclude the existence of other problems. It is not necessary to solve all of these problems. From the description of the section, it is possible to extract other issues. [Means for solving the problem]

[0008] One aspect of the present invention is a semiconductor device including a first substrate, a second substrate, a light receiving element, a first light emitting element, a resin layer, and The display device has a first light-shielding layer, a light-receiving element, a first light-emitting element, a resin layer, and a first The light-shielding layers are located between the first substrate and the second substrate. a first pixel electrode on the plate, an active layer on the first pixel electrode, and a common electrode on the active layer; The first light-emitting element is a second pixel electrode on the first substrate, a first light-emitting layer on the second pixel electrode, The resin layer and the first light-shielding layer are respectively formed as a common electrode. The resin layer is located between the conductive electrode and the second substrate. The resin layer has an opening that overlaps with the light-receiving element. The first light-shielding layer has a portion overlapping with the first light-emitting element. The first light-shielding layer is disposed between the common electrode and the resin layer. The first light-shielding layer has a portion located at at least a part of the opening and a portion exposed at the opening. It is preferable that the resin layer at least partially covers the side surface of the resin layer.

[0009] One aspect of the present invention is a semiconductor device including a first substrate, a second substrate, a light receiving element, a first light emitting element, a resin layer, and The display device has a first light-shielding layer, a light-receiving element, a first light-emitting element, a resin layer, and a first The light-shielding layers are located between the first substrate and the second substrate. a first pixel electrode on the plate, an active layer on the first pixel electrode, and a common electrode on the active layer; The first light-emitting element is a second pixel electrode on the first substrate, a first light-emitting layer on the second pixel electrode, The resin layer and the first light-shielding layer are respectively formed as a common electrode. The resin layer is disposed between the conductive electrode and the second substrate. The resin layer is provided in an island shape and includes the first light-emitting element. The first light-shielding layer has a portion that overlaps with the common electrode and the resin layer. At least a part of the light that has passed through the second substrate is incident on the light receiving element without passing through the resin layer. The first light-shielding layer preferably covers at least a part of the side surface of the resin layer.

[0010] The display device according to one embodiment of the present invention preferably further includes an adhesive layer. The resin layer and the first light-shielding layer are preferably located between the electrode and the second substrate. It is preferable that the adhesive layer is disposed between the adhesive layer and the second substrate. The adhesive layer overlaps the light receiving element. It is preferable that the first light emitting element has a first portion and a second portion that overlaps the first light emitting element. Preferably, the first portion is thicker than the second portion.

[0011] The display device according to one aspect of the present invention preferably further includes a common layer. a portion located between the pixel electrode and the common electrode and a portion located between the second pixel electrode and the common electrode; and a portion that

[0012] The display device of one embodiment of the present invention preferably further includes a partition wall. It is preferable that the partition wall covers an end of the first pixel electrode and an end of the second pixel electrode. It is preferable that the light absorbing material of the present invention has a function of absorbing at least a part of the light emitted by the material. The display device of one embodiment preferably further includes a partition wall and a second light-shielding layer. It is preferable that the second light-shielding layer covers the edge of the first pixel electrode and the edge of the second pixel electrode. , a portion located between the partition wall and the first light-shielding layer, and It is preferable that the partition wall has a function of absorbing at least a part of the light. It is preferable that an opening be formed between the element and the first light-emitting element. It is preferable that the opening is covered. When viewed from above, the light receiving element is surrounded by the second light-shielding layer. It is preferable that

[0013] The display device of one embodiment of the present invention preferably further includes a second light-emitting element. The light emitting element is preferably located between the first substrate and the second substrate. a third pixel electrode on the first substrate, a second light-emitting layer on the third pixel electrode, and a second light-emitting layer on the third pixel electrode; The first light-emitting element preferably has a common electrode on the first light-emitting layer. The second light emitting element preferably emits light emitted by the second light emitting layer. is preferred.

[0014] Alternatively, the display device of one embodiment of the present invention may further include a second light-emitting element, a first colored layer, and The second light-emitting element preferably has a colored layer between the first substrate and the second substrate. The second light-emitting element is preferably located at a third pixel electrode on the first substrate, a third It is preferable to have a first light-emitting layer on the pixel electrode and a common electrode on the first light-emitting layer. The first colored layer and the second colored layer are each located between the common electrode and the second substrate. It is preferable that the light emitted from the first light emitting element is converted into light of the first color through the first colored layer. It is preferable that the light emitted from the second light emitting element is extracted through the second colored layer. It is preferable that the light is extracted as light of the second color.

[0015] Alternatively, the display device of one embodiment of the present invention may further include a second light-emitting element, a partition wall, a second light-shielding layer, The second light emitting element preferably has a first substrate and a second substrate. The second light-emitting element is preferably located between the third pixel electrode on the first substrate and the It is preferable that the partition wall has a common electrode on the edge of the first pixel electrode. , the edge of the second pixel electrode, and the edge of the third pixel electrode. The layer has a portion located between the partition wall and the first light-shielding layer, and the light emitted by the first light-emitting element is It is preferable that the spacer has a function of absorbing at least a part of the light. It is preferable that the second light-shielding layer has a portion located between the first light-shielding layer and the second light-shielding layer. , located between the light receiving element and the first light emitting element, and the spacer The upper surface of the spacer is preferably located between the light emitting element and the second light blocking layer. It is more preferable that the second substrate be closer to the first substrate than the first substrate.

[0016] The active layer preferably comprises an organic compound.

[0017] The display device according to one embodiment of the present invention preferably further includes a lens. It is preferable that the insulating film has a portion overlapping with the element.

[0018] A display device according to one embodiment of the present invention includes a first substrate, a second substrate, a light-receiving element, a first light-emitting element, a second substrate ... second substrate, a first light-emitting element, a second substrate, a first light-emitting element, The display unit preferably includes an optical element, a resin layer, and a first light-shielding layer. It is preferable.

[0019] One aspect of the present invention is a display device having any of the above configurations, board (Flexible Printed Circuit, hereinafter referred to as FPC) or is equipped with a connector such as TCP (Tape Carrier Package) Module, or COG (Chip On Glass) or COF (Chi Modules such as modules on which integrated circuits (ICs) are mounted using the "p On Film" method, etc. It is a rule.

[0020] One aspect of the present invention is a device including the above module, an antenna, a battery, a housing, a camera, and a speaker. , a microphone, and an operation button. [Effects of the Invention]

[0021] According to one embodiment of the present invention, a display device having a light detection function can be provided. According to one embodiment of the present invention, a multifunctional display device can be provided. According to one embodiment of the present invention, a display device with high display quality can be provided. In this manner, a display device with high sensitivity for detecting light can be provided. A display device can be provided.

[0022] The description of these effects does not preclude the existence of other effects. However, it is not necessary to have all of these effects. , it is possible to extract effects other than these. [Brief explanation of the drawings]

[0023] [Figure 1] 1A to 1D are cross-sectional views showing an example of a display device, and FIGS. 1E to 1I are top views showing an example of a pixel. [Figure 2] Fig. 2A is a cross-sectional view showing an example of a display device, and Fig. 2B and Fig. 2C are diagrams showing an example of an upper surface layout of a resin layer. [Figure 3] 3A and 3B are cross-sectional views showing an example of a display device. [Figure 4] 4A to 4C are cross-sectional views showing an example of a display device. [Figure 5] 5A to 5C are cross-sectional views showing an example of a display device. [Figure 6] 6A and 6B are a top view and a cross-sectional view, respectively, illustrating an example of a display device. [Figure 7] 7A and 7B are cross-sectional views showing an example of a display device. [Figure 8] 8A and 8B are a top view and a cross-sectional view illustrating an example of a display device. [Figure 9] 9A and 9B are a top view and a cross-sectional view illustrating an example of a display device. [Figure 10] 10A and 10B are cross-sectional views showing an example of a display device. [Figure 11] 11A and 11B are cross-sectional views showing an example of a display device. [Figure 12] FIG. 12 is a perspective view showing an example of a display device. [Figure 13] FIG. 13 is a cross-sectional view showing an example of a display device. [Figure 14] 14A and 14B are cross-sectional views showing an example of a display device. [Figure 15] FIG. 15 is a cross-sectional view showing an example of a display device. [Figure 16] 16A is a cross-sectional view illustrating an example of a display device, and FIG 16B is a cross-sectional view illustrating an example of a transistor. [Figure 17] 17A and 17B are circuit diagrams showing examples of pixel circuits. [Figure 18] Fig. 18A is a block diagram showing an example of a pixel, and Fig. 18B is a circuit diagram showing an example of a pixel circuit. [Figure 19] 19A and 19B are diagrams showing an example of an electronic device. [Figure 20] 20A to 20D are diagrams showing examples of electronic devices. [Figure 21] 21A to 21F are diagrams showing examples of electronic devices. [Figure 22] FIG. 22 is a photograph of the top view of the evaluation device of Example 1. [Figure 23] 23A and 23B are photographs showing a cross section of the evaluation device of Example 1. FIG. [Figure 24] FIG. 24 is a photograph showing the display result of the display device of Example 1. [Figure 25]25A and 25B are photographs showing a cross section of the evaluation device of Example 1. FIG. [Figure 26] FIG. 26 is a diagram showing a device structure constituting a pixel of the display device of Example 2. In FIG. [Figure 27] 27A and 27B are photographs showing the display results of the display device of Example 2. [Figure 28] FIG. 28 is a graph showing the detection results of stray light in the display device of Example 2. [Figure 29] FIG. 29 is a graph showing the results of stray light detection in the display device of Example 2. In FIG. [Figure 30] FIG. 30 is a diagram illustrating an imaging optical system of a display device according to a second embodiment. [Figure 31] FIG. 31 is a graph showing the calculation results of the imaging range of the display device of the second embodiment. [Figure 32] 32A and 32B are photographs showing the imaging results of the display device of Example 2. FIG. [Figure 33] FIG. 33 is a graph showing the imaging results of the display device of Example 2. [Figure 34] 34A is a photograph showing an image taken using the display device of Example 2. FIG. 34B is a photograph showing an image taken using the display device of Example 2. [Figure 35] 35A is a photograph showing an image taken using the display device of Example 2. FIG. 35B is a photograph showing an image taken using the display device of Example 2. [Figure 36] FIG. 36 is a graph showing the current density-voltage characteristics of the device of Example 3. [Figure 37] 37A and 37B are graphs showing the current density-voltage characteristics of the device of Example 4. [Figure 38] 38A and 38B are graphs showing the wavelength dependence of the external quantum efficiency of the device of Example 4. [Figure 39] FIG. 39 is a graph showing the wavelength dependence of the external quantum efficiency of the device of Example 5. [Figure 40] FIG. 40 is a graph showing the temperature dependence of the external quantum efficiency of the device of Example 5. [Figure 41] FIG. 41 is a graph showing the wavelength dependence of the external quantum efficiency of the device of Example 6. [Figure 42] FIG. 42 is a graph showing the current density-voltage characteristics of the device of Example 6. [Figure 43] 43A to 43C are graphs showing the results of a reliability test of the device of Example 7. [Figure 44] FIG. 44 is a graph showing the results of a reliability test of the device of Example 7. [Figure 45] FIG. 45 is a graph showing the results of a reliability test of the device of Example 7. DETAILED DESCRIPTION OF THE INVENTION

[0024] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiments, and various changes and modifications may be made in the form and details thereof without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be achieved by the following embodiments. It should not be construed as being limited to the contents described.

[0025] In the configuration of the invention described below, the same parts or parts having similar functions are designated by the same reference numerals. The same reference numerals are used in common among different drawings, and the repeated explanations thereof will be omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be added.

[0026] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as in reality for ease of understanding. Therefore, the disclosed invention may not necessarily represent the position, size, range, etc. Furthermore, the present invention is not limited to the position, size, range, etc. disclosed in the drawings.

[0027] The words "film" and "layer" may be used interchangeably depending on the situation. For example, the term "conductive layer" can be used interchangeably with the term "conductive film." Alternatively, for example, the term "insulating film" can be changed to " The term "insulating layer" may be changed to "insulating layer."

[0028] In this specification, the term "light emitting element" is used interchangeably with the term "light emitting device." Similarly, the term "photodetector" can be used interchangeably with "photodetector device." It is possible to change the term to:

[0029] (Embodiment 1) In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

[0030] The display device of this embodiment mode has a light receiving element and a light emitting element in a display portion. The display device has a display section in which light-emitting elements are arranged in a matrix, and displays an image on the display section. The display unit has light receiving elements arranged in a matrix. The display unit also functions as a light receiving unit. The light receiving unit is an image sensor or a touch sensor. In other words, by detecting light with the light receiving section, it is possible to capture an image, It is possible to detect the proximity or contact of an object (such as a finger or pen). The display device of this embodiment can utilize the light emitting element as a light source for the sensor. There is no need to provide a light receiving unit and a light source separately from the display device, and the number of parts in the electronic device can be reduced. can.

[0031] In the display device of this embodiment, when light emitted from a light-emitting element included in a display portion is reflected by an object, the light is received. The optical element can detect the reflected light, allowing for imaging and touch (and even proximity) detection even in dark places. It is possible to get out.

[0032] The display device of this embodiment has a function of displaying an image using a light-emitting element. The light-emitting element functions as a display element.

[0033] The light-emitting element is an OLED (Organic Light Emitting Diode). de) and QLED(Quantum-dot Light Emitting Diod) It is preferable to use an EL element such as e). materials that emit light (fluorescent materials), materials that emit phosphorescence (phosphorescent materials), inorganic compounds (quantum dot materials) materials), and materials that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence Transducer-Assisted Delayed Fluorescence (TADF) materials In addition, as a light emitting element, micro LED (Light Emitting An LED such as a LED (LED) can also be used.

[0034] The display device of this embodiment mode has a function of detecting light using a light-receiving element.

[0035] When the light receiving element is used as an image sensor, the display device of the present embodiment uses the light receiving element , an image can be captured.

[0036] For example, using an image sensor to acquire data such as fingerprints, palm prints, or irises. That is, the display device of this embodiment can incorporate a biometric authentication sensor. By incorporating a biometric authentication sensor into the display device, it is possible to install a biometric authentication sensor separately from the display device. Compared to when a switch is provided, the number of parts in the electronic device can be reduced, and the electronic device can be made smaller and lighter. It is possible to do this.

[0037] In addition, the image sensor is used to measure the user's facial expression, eye movement, or changes in pupil diameter. By analyzing this data, the user's physical and mental information can be obtained. Based on this information, the display and / or audio output contents can be changed. By doing so, for example, it will be possible to develop devices for VR (Virtual Reality) and AR (Au Devices for Enhanced Reality or Mixed Reality ) devices, it is possible to ensure that users can use the devices safely.

[0038] In addition, when the light receiving element is used as a touch sensor, the display device of the present embodiment uses the light receiving element. This makes it possible to detect the proximity or contact of an object.

[0039] As the light receiving element, for example, a pn-type or pin-type photodiode can be used. The light receiving element acts as a photoelectric conversion element that detects the light incident on the light receiving element and generates an electric charge. It works by determining the amount of charge generated based on the amount of light incident on it.

[0040] In particular, an organic photodiode having a layer containing an organic compound is used as the light receiving element. Organic photodiodes are preferred because they can be easily made thin, lightweight, and large in area. In addition, since there is a high degree of freedom in shape and design, it can be applied to a variety of display devices.

[0041] In one embodiment of the present invention, an organic EL element is used as the light-emitting element, and an organic photodiode is used as the light-receiving element. The organic EL element and the organic photodiode are formed on the same substrate. Therefore, it is possible to incorporate an organic photodiode into a display device using an organic EL element. It is possible.

[0042] On the display surface of the display device according to one embodiment of the present invention, light emitted from the light-emitting element is extracted and received. The display device has a surface on which the light emitting element and the light receiving element are provided. It is preferable that the light-shielding layer is disposed closer to the display surface than the light-emitting element. The light is taken out of the display device through the opening (or the area where the light-shielding layer is not provided). Preferably, the light receiving element has an opening in the light blocking layer (or an area where the light blocking layer is not provided). It is preferable that the light is irradiated through the optical fiber.

[0043] The light receiving element detects the light emitted by the light emitting element and reflected by the object. If the light emitted from the object is reflected inside the display device and enters the light receiving element without passing through the object, Such stray light becomes noise during light detection and reduces the signal-to-noise ratio (S / N). This is a factor that reduces the noise ratio. By providing a light-shielding layer on the display surface side of the screen, the influence of stray light can be suppressed. This reduces noise and increases the sensitivity of the sensor using the light receiving element.

[0044] The closer the light-shielding layer is to the light-emitting element, the more effectively it can suppress stray light from the light-emitting element in the display device. In addition, the closer the light-shielding layer is to the light-emitting element, the more sensitive the oblique light. When the display device is viewed from a different direction, the decrease in contrast and the change in chromaticity can be suppressed. On the other hand, the farther the light-shielding layer is positioned from the light-receiving element, the better the viewing angle characteristics. This allows the area of the image pickup range of the light receiving element to be narrowed, thereby increasing the image pickup resolution. do.

[0045] Therefore, in one aspect of the present invention, the distance from the light-shielding layer to the light-receiving element and the distance from the light-shielding layer to the light-emitting element are A structure (e.g., a resin layer) is provided on the surface where the light-shielding layer is formed so that there is a difference between the distance at and By adjusting the layout and thickness of the structure, the distance from the light-shielding layer to the light-receiving element can be increased. In addition, the distance from the light-shielding layer to the light-emitting element can be shortened. To reduce noise, increase image resolution, and suppress viewing angle dependency of display. Therefore, it is possible to improve both the display quality and the image quality of the display device. Cut.

[0046] Specifically, one aspect of the present invention is a semiconductor device including a first substrate, a second substrate, a light receiving element, a light emitting element, and a resin layer. The display device has a light receiving element, a light emitting element, a resin layer, and a light blocking layer. The light receiving element is located between the first substrate and the second substrate. The light-emitting element has a pixel electrode, an active layer on the first pixel electrode, and a common electrode on the active layer. a second pixel electrode on the first substrate; a light-emitting layer on the second pixel electrode; and a common electrode on the light-emitting layer. The resin layer and the light-shielding layer are each located between the common electrode and the second substrate. The resin layer has a portion overlapping with the light emitting element. The light blocking layer is located between the common electrode and the resin layer. It has a part that

[0047] At least a part of the light emitted by the light emitting element is extracted to the outside of the second substrate through the resin layer. At least a part of the light that has passed through the second substrate is incident on the light receiving element without passing through the resin layer. For example, the resin layer has an opening that overlaps with the light receiving element. It is provided in an island shape at a position where it overlaps with the above.

[0048] The resin layer is provided at a position overlapping the light-emitting element, but not at a position overlapping the light-receiving element. Therefore, the distance from the light-shielding layer to the light-emitting element is This makes it possible to improve both the display quality and the image quality of the display device. Cut.

[0049] In addition, we are trying to create all the layers that make up the organic EL element and organic photodiode separately. The organic photodiode has the same structure as the organic EL element. Since there are many layers that can be formed, layers that can have a common structure can be formed at once, which reduces the number of film formation processes. In addition, even if the number of film formations is the same, the film is formed only on some elements. By reducing the number of layers, the influence of misalignment of the deposition pattern can be reduced, and the deposition mask (metal mask) Reduce the effects of dust (including tiny foreign objects called particles) adhering to the surface of the device. This makes it possible to increase the yield of manufacturing the display device. .

[0050] For example, at least one of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may be formed by a receiving layer. It is preferable to use a common layer for the optical element and the light emitting element. This reduces the number of film formations and masks. The number of the electrodes can be reduced, and the manufacturing steps and manufacturing costs of the display device can be reduced. The layers that are common to the light receiving element and the light emitting element have functions in the light receiving element and in the light emitting element. In this specification, the function of the light-emitting element may differ from that of the light-emitting element. For example, a hole injection layer functions as a hole injection layer in a light-emitting device and Similarly, the electron injection layer functions as a hole transport layer in the light-emitting device. It functions as an electron injection layer and as an electron transport layer in the light-receiving element.

[0051] 1A to 1D are cross-sectional views of a display device according to one embodiment of the present invention.

[0052] The display device 50A shown in FIG. 1A includes a layer 53 having a light receiving element between a substrate 51 and a substrate 59. and a layer 57 having a light-emitting element.

[0053] The display device 50B shown in FIG. 1B includes a layer 53 having a light receiving element between a substrate 51 and a substrate 59. , a layer 55 having a transistor, and a layer 57 having a light-emitting element.

[0054] The display device 50A and the display device 50B emit red (R), green (G), and blue light from the layer 57 having the light-emitting elements. The configuration is such that blue (G) and blue (B) light are emitted.

[0055] A display device according to one embodiment of the present invention has a plurality of pixels arranged in a matrix. A pixel has one or more sub-pixels. One sub-pixel has one light-emitting element. For example, The pixel has three sub-pixels (three colors of R, G, and B, or yellow (Y), cyan ( C), and magenta (M), or a configuration with four sub-pixels (R, G, B , white (W), or four colors of R, G, B, Y, etc. The light receiving element may be provided in all pixels, or in some pixels. Furthermore, one pixel may have a plurality of light receiving elements.

[0056] The transistor-containing layer 55 includes a first transistor and a second transistor. Preferably, the first transistor is electrically connected to the light receiving element. The starter is electrically connected to the light emitting element.

[0057] The display device according to one embodiment of the present invention has a function of detecting an object such as a finger that is in contact with the display device. For example, as shown in FIG. 1C, a layer 57 having a light-emitting element may have a light-emitting layer. The light emitted by the element is reflected by a finger 52 that touches the display device 50B, and the light is received by the The light receiving element in the layer 53 that receives the light detects the reflected light. It is possible to detect when the two come into contact.

[0058] The display device according to one embodiment of the present invention is located close to the display device 50B (connected) as shown in FIG. 1D. The sensor may have the function of detecting or capturing an object (not in contact).

[0059] [Pixels] 1E to 1I show an example of a pixel.

[0060] The pixel shown in FIGS. 1E to 1G includes three sub-pixels (three light-emitting elements) of R, G, and B, and a light-receiving element. FIG. 1E shows a 2×2 matrix of three sub-pixels and a light-receiving element PD. FIG. 1F shows an example in which three sub-pixels and a light receiving element PD are arranged in one horizontal row. Figure 1G shows an example where three sub-pixels are arranged in a horizontal row, and a photodetector is placed below them. 1E to 1G are examples in which PDs are arranged. It consists of four sub-pixels: three sub-pixels for image capture and one sub-pixel for light detection. It can also be said that...

[0061] The pixel shown in FIG. 1H has four sub-pixels (four light-emitting elements) of R, G, B, and W, and a light-receiving element P D and

[0062] The pixel shown in FIG. 1I has three sub-pixels, R, G, and B, a light-emitting element IR that emits infrared light, and a light-receiving element IR that receives infrared light. The light receiving element PD has a function of detecting infrared light. The light receiving element PD may have a function of detecting both visible light and infrared light. The wavelength of light detected by the light receiving element PD can be determined depending on the application of the sensor.

[0063] Hereinafter, a light-emitting element and a light-receiving element included in a display device of one embodiment of the present invention will be described with reference to FIGS. The detailed structure of the element will be described below.

[0064] The display device according to one embodiment of the present invention emits light in a direction opposite to a substrate on which a light-emitting element is formed. top-emission type, which emits light toward the substrate on which the light-emitting element is formed, and bottom-emission type, which emits light toward the substrate on which the light-emitting element is formed. The LED may be either a single-side emission type in which light is emitted from both sides or a dual-emission type in which light is emitted from both sides.

[0065] 2 to 11, a top-emission display device will be described as an example.

[0066] In this embodiment, the light emitting element that emits visible light and the light receiving element that detects visible light are mainly used. The display device further includes a light-emitting element that emits infrared light. The light receiving element may have a configuration for detecting infrared light, or a configuration for detecting visible light and It may be configured to detect both infrared light and infrared light.

[0067] [Display device 10A] FIG. 2A shows a cross-sectional view of the display device 10A.

[0068] The display device 10A includes a light receiving element 110 and a light emitting element 190.

[0069] The light-emitting element 190 includes a pixel electrode 191, a buffer layer 192, a light-emitting layer 193, and a buffer layer 194. The light-emitting element 19 includes a light-emitting layer 194 and a common electrode 115. The light-emitting layer 193 includes an organic compound. The display device 10A has a function of emitting visible light. In this embodiment, the pixel electrode 191 serves as an anode. The case where the common electrode 115 functions as a cathode will be described as an example.

[0070] The light receiving element 110 includes a pixel electrode 181, a buffer layer 182, an active layer 183, and a buffer layer 184. The active layer 183 includes an organic compound. The light receiving element 110 has a function of detecting visible light. In this embodiment, the pixel electrode 1 is aligned with the light emitting element 190. The following description will be given assuming that the electrode 81 functions as an anode and the common electrode 115 functions as a cathode. That is, the light receiving element 110 is reverse biased between the pixel electrode 181 and the common electrode 115. By driving the display device 10A, the light receiving element 110 detects light incident thereon and generates an electric charge. This can be extracted as a current.

[0071] Pixel electrode 181, pixel electrode 191, buffer layer 182, buffer layer 192, active layer 183 , the light-emitting layer 193, the buffer layer 184, the buffer layer 194, and the common electrode 115 are respectively The structure may be a single layer or a laminated layer.

[0072] The pixel electrode 181 and the pixel electrode 191 are located on the insulating layer 214. The pixel electrode 181 can be formed using the same material and in the same process. The ends of the pixel electrodes 191 and the ends of the pixel electrodes 191 are covered by partition walls 216. The electrode 181 and the pixel electrode 191 are electrically insulated from each other by the partition wall 216 (electrically (also called "separated").

[0073] An organic insulating film is suitable for the partition wall 216. Materials that can be used for the organic insulating film include: Examples include acrylic resin, polyimide resin, epoxy resin, polyamide resin, and polyimide resin. Amide resin, siloxane resin, benzocyclobutene resin, phenolic resin, and the resins The partition wall 216 is a layer that transmits visible light. Details will be described later. However, instead of the partition 216, a partition 217 that blocks visible light may be provided.

[0074] The buffer layer 182 is located on the pixel electrode 181. The active layer 183 is located between the buffer layer 182 and the pixel electrode 181. The active layer 183 overlaps with the pixel electrode 181 via a buffer layer 184. The buffer layer 184 is located on the active layer 183. The active layer 183 overlaps the common electrode 115 via the buffer layer 184. The buffer layer 184 may have a hole transport layer. can be done.

[0075] The buffer layer 192 is located on the pixel electrode 191. The light-emitting layer 193 is located between the buffer layer 192 and the pixel electrode 191. The buffer layer 194 is located on the light-emitting layer 193 and overlaps with the pixel electrode 191 via a gap therebetween. The light-emitting layer 193 overlaps the common electrode 115 via a buffer layer 194. 2 may have one or both of a hole injection layer and a hole transport layer. 94 may have one or both of an electron injection layer and an electron transport layer.

[0076] The common electrode 115 is a layer that is used in common by the light receiving element 110 and the light emitting element 190 .

[0077] The material and film thickness of the pair of electrodes of the light receiving element 110 and the light emitting element 190 are the same. This makes it possible to reduce the manufacturing cost of the display device and simplify the manufacturing process.

[0078] The display device 10A has a pair of substrates (substrate 151 and substrate 152) between which a light receiving element 110 and a light emitting element 111 are disposed. It includes a photoelement 190, a transistor 41, and a transistor 42.

[0079] In the light receiving element 110, the barriers located between the pixel electrode 181 and the common electrode 115 are The buffer layer 182, the active layer 183, and the buffer layer 184 are organic layers (layers containing organic compounds). It is preferable that the pixel electrode 181 has a function of reflecting visible light. The common electrode 115 has a function of transmitting visible light. In the case where the common electrode 115 is configured to transmit infrared light, the common electrode 115 has a function of transmitting infrared light. The electrode 181 preferably has a function of reflecting infrared light.

[0080] The light receiving element 110 has a function of detecting light. The photoelectric conversion element receives light 22 incident from outside the device 10A and converts it into an electrical signal. The light 22 can also be said to be light emitted from the light emitting element 190 and reflected by the object. The light 22 may be incident on the light receiving element 110 via a lens, which will be described later.

[0081] In the light emitting element 190, the barriers located between the pixel electrode 191 and the common electrode 115 are The buffer layer 192, the light-emitting layer 193, and the buffer layer 194 can also be referred to as an EL layer. The pixel electrode 191 preferably has a function of reflecting visible light. The display device 10A has a light-emitting element that emits infrared light. In this configuration, the common electrode 115 has a function of transmitting infrared light. It is preferable that 91 has a function of reflecting infrared light.

[0082] The light emitting element included in the display device of this embodiment has a micro-optical resonator (microcavity) structure. Therefore, one of the pair of electrodes of the light emitting element is preferably The device may have an electrode (semi-transmissive / semi-reflective electrode) that is transparent and reflective to visible light. The other electrode preferably has a reflectivity to visible light (reflective electrode). The light emitting device has a microcavity structure, which allows light emitted from the light emitting layer to be Resonance can be caused between the electrodes to intensify the light emitted from the light emitting element.

[0083] The semi-transparent / semi-reflective electrode is a combination of a reflective electrode and an electrode that is transparent to visible light (transparent electrode). In this specification and the like, they are referred to as semi-transparent and semi-reflective, respectively. The reflective electrode, which functions as a part of the reflective electrode, is referred to as a pixel electrode or a common electrode, and the transparent electrode is referred to as a light Although it is sometimes written as an optical adjustment layer, the transparent electrode (optical adjustment layer) can also be used as a pixel electrode or a common electrode. It can be said that it has all the functions.

[0084] The light transmittance of the transparent electrode is set to 40% or more. For example, the light emitting element is configured to transmit visible light (wavelength 40 It is preferable to use an electrode having a transmittance of 40% or more for light (light of 0 nm or more but less than 750 nm). The reflectance of the semi-transmissive / semi-reflective electrode for visible light is 10% or more and 95% or less, preferably The reflectance of the reflective electrode for visible light is 30% or more and 80% or less. The reflectance of the reflective electrode for visible light is 40% or more and 100% or less. Preferably, the resistivity of these electrodes is 70% or more and 100% or less. - 2 In addition, when a light emitting element that emits near-infrared light is used in a display device, The transmittance and reflectance of near-infrared light (light with wavelengths between 750 nm and 1300 nm) of these electrodes It is also preferable that the value is in the above range.

[0085] The buffer layer 192 or the buffer layer 194 may function as an optical adjustment layer. By making the thickness of the buffer layer 192 or the buffer layer 194 different, In this case, it is possible to enhance and extract light of a specific color. In the case of a laminated structure of a reflective electrode and a transparent electrode, the optical distance between a pair of electrodes is the distance between a pair of reflective electrodes. indicates the optical distance.

[0086] The light emitting element 190 has a function of emitting visible light. Specifically, the light emitting element 190 is a pixel By applying a voltage between the electrode 191 and the common electrode 115, light is emitted toward the substrate 152. It is an electroluminescent device (see light emission 21).

[0087] The light-emitting layer 193 is preferably formed so as not to overlap the light-receiving element 110. This makes it possible to prevent the light emitting layer 193 from absorbing the light 22, and The quantity can be increased.

[0088] The pixel electrode 181 is connected to the transistor 41 through an opening provided in the insulating layer 214. It is electrically connected to the source or drain.

[0089] The pixel electrode 191 is connected to the transistor 42 through an opening provided in the insulating layer 214. The transistor 42 is electrically connected to the source or drain of the light-emitting element 190. It has the function of controlling movement.

[0090] The transistor 41 and the transistor 42 are in contact with each other on the same layer (substrate 151 in FIG. 2A). are.

[0091] At least a part of the circuit electrically connected to the light receiving element 110 is electrically connected to the light emitting element 190. It is preferable that the circuit be formed from the same material and in the same process as the circuit connected to the circuit. In comparison with the case where the two circuits are formed separately, the thickness of the display device can be made thinner. In addition, the manufacturing process can be simplified.

[0092] The light receiving element 110 and the light emitting element 190 are preferably covered with a protective layer 116. In FIG. 2A, a protective layer 116 is provided on and in contact with the common electrode 115. By providing the layer 116, impurities such as water can be prevented from entering the light receiving element 110 and the light emitting element 190. This can prevent the light receiving element 110 and the light emitting element 190 from being broken, thereby improving the reliability of the light receiving element 110 and the light emitting element 190. In addition, the protective layer 116 and the substrate 152 are bonded together by the adhesive layer 142 .

[0093] A resin layer 159 is provided on the surface of the substrate 152 facing the substrate 151. The resin layer 159 is It is provided at a position overlapping the light emitting element 190, but not at a position overlapping the light receiving element 110. In this specification and the like, the position overlapping with the light emitting element 190 specifically refers to the position overlapping with the light emitting element 190. Similarly, the position where the light receiving element 110 overlaps with the light emitting area of the light receiving element 110 is not limited to the specific position. Specifically, it refers to the position that overlaps with the light receiving area of the light receiving element 110.

[0094] The resin layer 159 is provided at a position overlapping the light emitting element 190, for example, as shown in FIG. 2B. In addition, an opening 159p can be provided at a position overlapping with the light receiving element 110. Alternatively, the resin layer 159 may be formed at a position overlapping the light emitting element 190 as shown in FIG. 2C. The light receiving element 110 may be provided in an island shape and may not be provided at a position where it overlaps the light receiving element 110. can.

[0095] A light-shielding layer 158 is formed on the surface of the substrate 152 facing the substrate 151 and on the surface of the resin layer 159 facing the substrate 151. The light-shielding layer 158 is provided at a position where it overlaps with the light-emitting element 190 and at a position where it overlaps with the light-receiving element 11. It has an opening at the position where it overlaps with 0.

[0096] Here, the light receiving element 110 detects the light emitted by the light emitting element 190 and reflected by the object. However, the light emitted from the light emitting element 190 is reflected within the display device 10A and does not pass through the object. However, this light may be incident on the light receiving element 110. The light blocking layer 158 absorbs such stray light. This can reduce stray light incident on the light receiving element 110. For example, the light blocking layer 158 , and absorbs stray light 23 a that passes through resin layer 159 and is reflected by the surface of substrate 152 on the substrate 151 side. In addition, the light blocking layer 158 can absorb the stray light 23b before it reaches the resin layer 159. This makes it possible to reduce stray light incident on the light receiving element 110. Therefore, noise can be reduced and the sensitivity of the sensor using the light receiving element 110 can be increased. In particular, if the light-shielding layer 158 is located close to the light-emitting element 190, stray light can be further reduced. Furthermore, if the light-shielding layer 158 is located close to the light-emitting element 190, the display may be affected depending on the viewing angle. This is also preferable from the viewpoint of improving display quality, since dependency can be suppressed.

[0097] In addition, by providing the light-shielding layer 158, the range in which the light-receiving element 110 detects light can be controlled. If the light-shielding layer 158 is located far away from the light-receiving element 110, the imaging range will be narrow. , the imaging resolution can be increased.

[0098] When the resin layer 159 has an opening, the light-shielding layer 158 covers at least a part of the opening and the It is preferable to cover at least a part of the side surface of the resin layer 159 exposed in the opening.

[0099] When the resin layer 159 is provided in an island shape, the light-shielding layer 158 is formed on at least a portion of the side surface of the resin layer 159. It is preferable that the coating layer is at least partially covered.

[0100] In this way, the light-shielding layer 158 is provided along the shape of the resin layer 159, so that the light-shielding layer 158 The distance from the light-shielding layer 1 to the light-emitting element 190 (specifically, the light-emitting region of the light-emitting element 190) is 58 to the light receiving element 110 (specifically, the light receiving area of the light receiving element 110) This reduces sensor noise, increases image resolution, and improves display quality. Therefore, the display quality and the image quality of the display device can be improved. It can improve both quality and quality.

[0101] The resin layer 159 is a layer that transmits light emitted from the light emitting element 190. The resin layer 159 is made of a material Acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide Resins, siloxane resins, benzocyclobutene-based resins, phenolic resins, and the like The structure provided between the substrate 152 and the light-shielding layer 158 may be a resin precursor. The thickness of the structure is not limited to the light-shielding layer, and an inorganic insulating film or the like may be used. There is a difference between the distance from the light-shielding layer to the light-receiving element and the distance from the light-shielding layer to the light-emitting element. The organic insulating film is suitable for the structure because it can be easily formed thick.

[0102] The light-shielding layer 158 may be made of a material that blocks light emitted from the light-emitting element. The light-shielding layer 158 is preferably made of a metal material or a material that absorbs visible light. The black matrix is made of resin materials containing pigments (carbon black, etc.) or dyes. The light-shielding layer 158 can form a red color filter, a green color filter, and a The transparent electrode 10 may have a laminated structure of a blue color filter and a blue filter.

[0103] The distance from the light-shielding layer 158 to the light-receiving element 110 and the distance from the light-shielding layer 158 to the light-emitting element 190 In order to compare the distance, for example, the distance from the end of the light-shielding layer 158 on the light-receiving element 110 side to the common terminal The shortest distance L1 from the end of the light-shielding layer 158 on the light-emitting element 190 side to the common electrode 115 is The shortest distance L2 can be used to determine the distance from the shortest distance L1 to the shortest distance L2. 2 is short, the stray light from the light emitting element 190 is suppressed, and the sensor using the light receiving element 110 The sensitivity can be increased. Also, the viewing angle dependency of the display can be suppressed. The shortest distance L1 is longer than the distance L2, so that the imaging range of the light receiving element 110 is narrowed. This allows for an increase in the image resolution.

[0104] In addition, the adhesive layer 142 has a portion overlapping the light receiving element 110 compared to the portion overlapping the light emitting element 190. By configuring the overlapping portion to be thick, the distance from the light-shielding layer 158 to the light-receiving element 110 and A difference can be created between the distance from the light-shielding layer 158 to the light-emitting element 190 and the distance from the light-shielding layer 158 to the light-emitting element 190 .

[0105] [Display device 10B] FIG. 3A shows a cross-sectional view of the display device 10B. Description of the same configuration as the display device described above may be omitted.

[0106] The display device 10B does not have the buffer layer 182 and the buffer layer 192, but has the common layer 112. In this respect, the display device 10 differs from the display device 10A.

[0107] The common layer 112 is located on the partition wall 216 , the pixel electrode 181 , and the pixel electrode 191 . The common layer 112 is a layer that is used in common by the light receiving element 110 and the light emitting element 190. The layer 112 may be a single layer structure or a laminate structure.

[0108] The common layer 112 may be, for example, a hole injection layer or a hole transport layer. The common layer 112 can be used for both the light emitting element 190 and the light receiving element 110. For example, when the common layer 112 has a hole injection layer, the hole The injection layer functions as a hole injection layer in the light-emitting element 190 and as a positive electrode in the light-receiving element 110. The common layer 112 may have a single layer structure or a laminated structure. Good too.

[0109] At least a part of the layers other than the active layer and the light-emitting layer is common to the light-receiving element and the light-emitting element. The above structure is preferable because it can reduce the manufacturing steps of the display device.

[0110] [Display device 10C] FIG. 3B shows a cross-sectional view of the display device 10C.

[0111] The display device 10C does not have the buffer layer 184 and the buffer layer 194, but has the common layer 114. In this respect, the display device 10 differs from the display device 10A.

[0112] The common layer 114 is located on the partition wall 216, the active layer 183, and the light-emitting layer 193. The layer 114 is a layer that is used in common by the light receiving element 110 and the light emitting element 190. The film 14 may have a single layer structure or a laminated structure.

[0113] The common layer 114 may be, for example, an electron injection layer or an electron transport layer. The common layer 114 can be used for both the light emitting element 190 and the light receiving element 110. For example, when the common layer 114 has an electron injection layer, the electron The injection layer functions as an electron injection layer in the light-emitting element 190 and as an electron injection layer in the light-receiving element 110. The common layer 114 may have a single layer structure or a laminated structure. Good too.

[0114] At least a part of the layers other than the active layer and the light-emitting layer is common to the light-receiving element and the light-emitting element. The above structure is preferable because it can reduce the manufacturing steps of the display device.

[0115] [Display device 10D] FIG. 4A shows a cross-sectional view of the display device 10D.

[0116] The display device 10D includes a buffer layer 182, a buffer layer 192, a buffer layer 184, and a buffer layer 196. The display device 10A is different from the display device 10A in that it does not have the layer 194 but has the common layer 112 and the common layer 114. different.

[0117] In the display device of this embodiment, an organic compound is used for the active layer 183 of the light receiving element 110. The optical element 110 has layers other than the active layer 183 in common with the light emitting element 190 (EL element). Therefore, the process of forming the active layer 183 can be omitted in the process of manufacturing the light emitting device 190. By simply adding a step, the light receiving element 110 can be formed in parallel with the formation of the light emitting element 190. In addition, the light emitting element 190 and the light receiving element 110 can be formed on the same substrate. Therefore, the light receiving element 110 can be built into the display device without significantly increasing the number of manufacturing steps. It is possible.

[0118] In the display device 10D, the active layer 183 of the light receiving element 110 and the light emitting layer 193 of the light emitting element 190 10. The light receiving element 110 and the light emitting element 190 have the same configuration except for the differences between the two. However, the configuration of the light receiving element 110 and the light emitting element 190 is not limited to this. In addition to the active layer 183 and the light-emitting layer 193, the light-emitting element 190 also has layers that are made separately. (See the above-mentioned display devices 10A, 10B, and 10C.) The optical element 190 preferably has one or more layers that are used in common (common layers). This allows the light receiving element 110 to be built into the display device without significantly increasing the number of manufacturing steps. can.

[0119] [Display device 10E] FIG. 4B shows a cross-sectional view of the display device 10E.

[0120] The display device 10E does not have the substrate 151 and the substrate 152, but has the substrate 153, the substrate 154, and the adhesive The display device 10 differs from the display device 10D in that it has a layer 155 and an insulating layer 212.

[0121] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The protective layer 116 is bonded to the protective layer 116 by an adhesive layer 142 .

[0122] The display device 10E includes an insulating layer 212, a transistor 41, and a transistor The photodiode 42, the light receiving element 110, the light emitting element 190, etc. are transposed onto the substrate 153. The substrate 153 and the substrate 154 are preferably flexible. This is preferable because it is possible to improve the flexibility of the display device 10E. It is preferable that resin is used for the resin layer 3 and the substrate 154.

[0123] The substrates 153 and 154 are made of polyethylene terephthalate (PET). Polyester resins such as polyethylene naphthalate (PEN), polyacrylonitrile resins Oil, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, ara) amide, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide Imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, poly Propylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose Nanofibers or the like can be used. Alternatively, glass having a thickness sufficient to provide flexibility may be used.

[0124] A film with high optical isotropy may be used for a substrate included in the display device of this embodiment mode. Triacetyl cellulose (TAC, cellulose triacetate) is an example of a film with high optical isotropy. acetate film, cycloolefin polymer (COP) film, cyclo Examples include olefin copolymer (COC) films and acrylic films.

[0125] [Display device 10F, 10G, 10H] FIG. 4C shows a cross-sectional view of the display device 10F. FIG. 5A shows a cross-sectional view of the display device 10G. FIG. 1B shows a cross-sectional view of the display device 10H.

[0126] The display device 10F includes a lens 149 in addition to the configuration of the display device 10D.

[0127] The display device of this embodiment may have a lens 149. The lens 149 is a light receiving element. In the display device 10F, the lens 149 is disposed at a position overlapping the substrate 15. The lens 149 of the display device 10F is provided so as to be convex on the substrate 151 side. It has a surface.

[0128] When both the light-shielding layer 158 and the lens 149 are formed on the same surface of the substrate 152, the order of formation is as follows: Although FIG. 4C shows an example in which the lens 149 is formed first, it is also possible to form the light-shielding layer 158 first. In FIG. 4C, the edges of the lens 149 are covered by a light-shielding layer 158.

[0129] The display device 10F is configured such that light 22 enters the light receiving element 110 via a lens 149. When the lens 149 is provided, the image of the light receiving element 110 is captured more clearly than when the lens 149 is not provided. The image range can be narrowed, and overlapping of the image range with that of the adjacent light receiving element 110 can be suppressed. This allows for capturing clear images with little blur. When the imaging range is the same, the imaging range with the lens 149 is smaller than the imaging range without the lens 149. The size of the pinhole (in FIG. 4C, the size of the opening of the light-shielding layer 158 that overlaps with the light-receiving element 110) Therefore, by having the lens 149, the light receiving The amount of light incident on the element 110 can be increased.

[0130] In the display device 10G shown in FIG. 5A, similarly to the display device 10F, the light 22 passes through a lens 149. This is one of the configurations in which light is incident on the light receiving element 110.

[0131] In the display device 10G, a lens 149 is provided in contact with the upper surface of the protective layer 116. The lens 149 of the device 10G has a convex surface facing the substrate 152 side.

[0132] The display device 10H shown in FIG. 5B has a lens array 146 provided on the display surface side of the substrate 152. The lenses of the lens array 146 are provided at positions overlapping the light receiving elements 110. A light-shielding layer 158 is preferably provided on the surface of the substrate 152 facing the substrate 151. I wish.

[0133] The method for forming the lenses used in the display device of this embodiment is to form a lens on the substrate or the light receiving element. Lenses such as microlenses may be formed directly, or a separately manufactured microlens array may be used. A lens array such as a ray may be attached to the substrate.

[0134] The lens preferably has a refractive index of 1.3 or more and 2.5 or less. For example, the insulating layer 10 can be formed using a material containing a resin. The material containing at least one of oxide and sulfide can be used for the lens. It can be used in lenses.

[0135] Specifically, resins containing chlorine, bromine, or iodine, resins containing heavy metal atoms, and resins containing aromatic rings Resins containing sulfur or sulfur can be used for the lenses. Materials containing nanoparticles of materials with higher refractive indexes can be used for lenses. Alternatively, zirconium oxide or the like can be used for the nanoparticles.

[0136] Also, cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, Tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, oxides containing indium and tin or oxides containing indium, gallium, and zinc can be used for the lenses. Alternatively, zinc sulfide or the like can be used for the lens.

[0137] [Display device 10J] FIG. 5C shows a cross-sectional view of the display device 10J.

[0138] The display device 10J does not have the partition wall 216 that transmits visible light, but has the partition wall 217 that blocks visible light. The display device 10B differs from the display device 10D in that:

[0139] The partition wall 217 preferably absorbs the light emitted by the light emitting element 190. For example, a black matrix can be formed using a resin material containing a pigment or a dye. In addition, by using a brown resist material, the partition wall 217 can be formed with a colored insulating layer. It can be configured.

[0140] In the display device 10D (FIG. 4A), light emitted from the light emitting element 190 passes through the substrate 152 and the partition wall. 216, and the reflected light may be incident on the light receiving element 110. The light emitted by the transistor 216 passes through the partition wall 216 and is reflected by the transistor or wiring, etc. In the display device 10J, the partition wall 217 By absorbing the light, it is possible to prevent such reflected light from entering the light receiving element 110. This reduces noise and increases the sensitivity of the sensor using the light receiving element 110. Cut.

[0141] It is preferable that the partition wall 217 absorbs at least the wavelength of light detected by the light receiving element 110. For example, when the light receiving element 110 detects green light emitted by the light emitting element 190, the partition wall 2 For example, the partition wall 217 preferably absorbs at least green light. The color filter can absorb green light, and the reflected light reaches the light receiving element 110. This can prevent the light from entering the device.

[0142] The light-shielding layer 158 can absorb most of the stray light 23b before it reaches the resin layer 159. A part of the stray light 23b may be reflected and enter the partition wall 217. If the structure is such that the stray light 23b is absorbed, it is possible to prevent the stray light 23b from being incident on the transistor, wiring, etc. Therefore, it is possible to prevent the stray light 23c from reaching the light receiving element 110. The more times the stray light 23b hits the light blocking layer 158 and the partition wall 217, the more the amount of light absorbed. This makes it possible to reduce the amount of stray light 23c that reaches the light receiving element 110 extremely. If the resin layer 159 is thick, the stray light 23b may not strike the light blocking layer 158 and the partition wall 217. This is preferable because the number can be increased.

[0143] Furthermore, the partition wall 217 absorbs light, so that light is not directly incident on the partition wall 217 from the light emitting element 190. The stray light 23d can be absorbed by the partition wall 217. By providing the light receiving element 17, stray light incident on the light receiving element 110 can be reduced.

[0144] [Display device 10K] 6A shows a top view of the display device 10K. 7A shows a cross-sectional view taken along the dashed line A3-A4 in FIG. 6A.

[0145] In Figure 6A, the area enclosed by the dotted line frame corresponds to one pixel. 110, red light emitting element 190R, green light emitting element 190G, and blue light emitting element 19 It has 0B.

[0146] The top surface shapes of the light receiving element 110 and the light emitting elements 190R, 190G, and 190B are not particularly limited. The pixel layout shown in FIG. 6A is of the hexagonal close-packed type. By adopting a compact layout, the light receiving element 110 and the light emitting elements 190R, 190G, and 19 This is preferable because it can increase the aperture ratio of the light receiving area of the light receiving element 110. is a rectangle, and the light-emitting regions of the light-emitting elements 190R, 190G, and 190B are each a hexagon. is.

[0147] When viewed from above (or in a plan view), the light receiving element 110 is positioned inside the frame-shaped light blocking layer 219a. By completely surrounding the four sides of the light receiving element 110 with the light blocking layer 219a, stray light is blocked. It is possible to prevent light from being incident on the light receiving element 110. The frame-shaped light blocking layer 219a has a gap (cut The pattern may have gaps, breaks, or missing parts.

[0148] When viewed from above, there is a space between the green light emitting element 190G and the blue light emitting element 190B. A 219b is provided.

[0149] As shown in FIGS. 6B and 7A, the display device 10K includes a light receiving element 110, a red light emitting element 111, and a 90R, a green light emitting element 190G, and a blue light emitting element 190B.

[0150] The light emitting element 190R includes a pixel electrode 191R, a common layer 112, a light emitting layer 193R, and a common layer 114. and a common electrode 115. The light-emitting layer 193R is made of an organic compound that emits red light 21R. The light emitting element 190R has a function of emitting red light.

[0151] The light emitting element 190G includes a pixel electrode 191G, a common layer 112, a light emitting layer 193G, and a common layer 114. and a common electrode 115. The light-emitting layer 193G is made of an organic compound that emits green light 21G. The light emitting element 190G has a function of emitting green light.

[0152] The light emitting element 190B includes a pixel electrode 191B, a common layer 112, a light emitting layer 193B, and a common layer 114. and a common electrode 115. The light-emitting layer 193B is made of an organic compound that emits blue light 21B. The light emitting element 190B has a function of emitting blue light.

[0153] The light receiving element 110 includes a pixel electrode 181, a common layer 112, an active layer 183, a common layer 114, and The light receiving element 110 has a common electrode 115. The active layer 183 has an organic compound. It has the function of detecting visible light.

[0154] The display device 10K has a pair of substrates (substrate 151 and substrate 152) between which a light receiving element 110 and a light emitting element 111 are disposed. Optical element 190R, light emitting element 190G, light emitting element 190B, transistor 41, transistor The transistor 42R, the transistor 42G, and the transistor 42B.

[0155] The ends of the pixel electrodes 181, 191R, 191G, and 191B are separated by partition walls 216. It is covered with

[0156] The pixel electrode 181 is connected to the transistor 41 through an opening provided in the insulating layer 214. The pixel electrode 191R is provided on the insulating layer 214 and is electrically connected to the source or drain. The source or drain of the transistor 42R is electrically connected through the opening. Similarly, the pixel electrode 191G is connected to the transistor through an opening provided in the insulating layer 214. The pixel electrode 1 is electrically connected to the source or drain of the transistor 42G. 91B is connected to the source of the transistor 42B through an opening in the insulating layer 214. Or, it is electrically connected to the drain.

[0157] The light receiving element 110 and the light emitting elements 190R, 190G, and 190B are each covered with a protective layer 116. is covered in

[0158] A resin layer 159 is provided on the surface of the substrate 152 facing the substrate 151. The resin layer 159 is The light emitting elements 190R, 190G, and 190B are provided at positions overlapping with the light receiving element 110. It cannot be installed in a position where

[0159] A light-shielding layer 158 is formed on the surface of the substrate 152 facing the substrate 151 and on the surface of the resin layer 159 facing the substrate 151. The light-shielding layer 158 is provided on each of the light-emitting elements 190R, 190G, and 190B. and a position where it overlaps with the light receiving element 110.

[0160] In top view, the partition wall 216 has a frame-shaped opening. 6 has an opening between the light receiving element 110 and the light emitting element 190R. The light-shielding layer 219a is provided so as to cover the openings of the partition walls 216 and It is preferable that the light-shielding layer 219a covers the side surfaces of the partition walls 216 exposed at the openings. , preferably covering at least a portion of the upper surface of the partition wall 216 .

[0161] Alternatively, the partition wall 216 may not have an opening, and the light-shielding layer 219a may be provided on the partition wall 216. However, there is a possibility that stray light may pass through the partition 216 and enter the light receiving element 110. 6, and a light-shielding layer 219a is provided to fill the opening. Stray light transmitted through the partition wall 216 is absorbed by the light-shielding layer 219a at the opening of the partition wall 216. This makes it possible to prevent stray light from entering the light receiving element 110.

[0162] The light-shielding layer 219a preferably has a forward tapered shape. The films (common layer 112, common layer 114, common electrode 115, protective layer 116, etc.) provided on the ) can be improved in coverage.

[0163] The light-shielding layer 219a preferably absorbs at least the wavelength of light detected by the light-receiving element 110. For example, when the light receiving element 110 detects green light emitted by the light emitting element 190G, It is preferable that the light-shielding layer 219a absorbs at least green light. If 9a has a red color filter, it can absorb green light and receive reflected light. The light blocking layer 219a can prevent light from entering the optical element 110. The light blocking layer 219a contains a pigment or a dye. The light-shielding layer 219a may be a black matrix formed using a resin material or the like. A laminated structure of red, green, and blue color filters. Alternatively, a brown resist material may be used as the light-shielding layer 219a to form a colored layer. An insulating layer may be formed.

[0164] For example, when the light receiving element 110 detects green light emitted by the light emitting element 190G, The light emitted from 190G is reflected by the substrate 152 and the partition wall 216, and the reflected light reaches the light receiving element 110. In addition, the light emitted from the light emitting element 190G may be transmitted through the partition wall 216 and may be incident on the transistor. When the light is reflected by a transistor or wiring, the reflected light may be incident on the light receiving element 110. In the display device 10K, light is absorbed by the light-shielding layer 158 and the light-shielding layer 219a. Therefore, it is possible to prevent such reflected light from entering the light receiving element 110. This reduces noise and increases the sensitivity of the sensor using the light receiving element 110.

[0165] For example, the light blocking layer 158 can absorb most of the stray light 23b before it reaches the resin layer 159. Furthermore, even if a part of the stray light 23b is reflected by the light-shielding layer 158, the light-shielding layer 219a can By absorbing the stray light 23b, it is possible to prevent the stray light 23b from being incident on the transistor, wiring, etc. Therefore, it is possible to prevent stray light from reaching the light receiving element 110. The more times the light hits the light blocking layer 219a and the light blocking layer 158, the more light is absorbed. Therefore, the amount of stray light reaching the light receiving element 110 can be extremely reduced. If the thickness is large, the number of times that the stray light 23b hits the light blocking layer 158 and the partition wall 217 can be increased. If the resin layer 159 is thick, the light-shielding layer 158 and the light-emitting elements of each color can be easily arranged. This reduces the viewing angle dependency of the display, which is beneficial from the perspective of improving display quality. preferable.

[0166] Furthermore, the light-shielding layer 219a absorbs light, so that light directly incident on the light-shielding layer 219a from the light-emitting element is The stray light 23d can be absorbed by the light-shielding layer 219a. By providing the light-shielding layer 219a, it is possible to reduce stray light incident on the light-receiving element 110. .

[0167] In addition, by providing the light-shielding layer 158, the range in which the light-receiving element 110 detects light can be controlled. If the distance from the light-shielding layer 158 to the light-receiving element 110 is long, the imaging range becomes narrow. The imaging resolution can be increased.

[0168] The spacer 219b is located on the partition wall 216 and is located between the light emitting element 190G and the light emitting element 190G in a top view. The upper surface of the spacer 219b is located between the light-shielding layer 219a and the light-emitting element 190B. It is preferable that the thickness L3 of the light-shielding layer 219a is closer to the light-shielding layer 158 than the surface of the partition wall 216. If the thickness of the frame-shaped light-shielding layer 219a is equal to or greater than the sum L4 of the thickness of the frame-shaped light-shielding layer 219a and the thickness of the spacer 219b, The adhesive layer 142 is not sufficiently filled on the side, and the light receiving element 110 and further the signal of the display device 10K are not sufficiently filled. Therefore, the thickness of the partition wall 216 and the thickness of the spacer 219b may be reduced. The sum L4 is preferably greater than the thickness L3 of the light-shielding layer 219a. As shown in FIG. 7A, the spacer 219b and the light-shielding layer 142 are easily filled. In the overlapping portion between the light-shielding layer 158 and the protective layer 116 (or the common electrode 115), They may be in contact.

[0169] [Display device 10L] FIG. 7B shows a cross-sectional view of the display device 10L.

[0170] The display device 10L has a structure in which the light emitting elements 190R, 190G, and 190B have the same light emitting layer. 7B corresponds to a cross-sectional view taken along the dashed dotted line A3-A4 in FIG. 6A.

[0171] The light emitting element 190G shown in FIG. 7B includes a pixel electrode 191G, an optical adjustment layer 197G, a common layer 11 2, a light-emitting layer 113, a common layer 114, and a common electrode 115. 190B includes a pixel electrode 191B, an optical adjustment layer 197B, a common layer 112, a light-emitting layer 113, a common layer 114, a common electrode 115, a common electrode 116, a common electrode 117, a common electrode 118, a common electrode 119 ...20, a common electrode 121, a common electrode The common layer 112, the light-emitting layer 113, and the common electrode 115 are connected to each other. 14 is a common configuration for the light emitting elements 190R, 190G, and 190B. The optical layer 113 includes a light-emitting layer 193R that emits red light, a light-emitting layer 193G that emits green light, and and a light-emitting layer 193B that emits blue light.

[0172] In FIG. 7B, the EL layers are shown as a common layer 112, a light-emitting layer 113, and a common layer 114. The light emitting element is not limited to this. It may be a single structure having one light-emitting unit, or a tandem structure having multiple light-emitting units. It may be of the same structure.

[0173] The light-emitting layer 113 is provided in common to the light-emitting elements that emit light of each color. The emitted light passes through the colored layer CFG and is extracted as green light 21G. The light emitted by 0B passes through the colored layer CFB and is extracted as blue light 21B.

[0174] The light emitting element 190G and the light emitting element 190B have optical adjustment layers with different thicknesses. The other components are the same. Reflective electrodes are used as the pixel electrodes 191G and 191B. A transparent electrode on a reflective electrode can be used as the optical adjustment layer. It is preferable that the optical adjustment layers 197 have different thicknesses. 190G indicates an optical distance between the pixel electrode 191G and the common electrode 115 that enhances green light. The optical adjustment layer 197G is used to perform optical adjustment so that the distance is the same. 190B indicates an optical distance between the pixel electrode 191B and the common electrode 115 that enhances blue light. The optical adjustment layer 197B is used to perform optical adjustment so that the distance is equal to the predetermined distance.

[0175] [Display device 10M] 8A shows a top view of the display device 10M. A cross-sectional view of section 6 is shown.

[0176] The display device 10M shown in FIGS. 8A and 8B includes a green light-emitting element 190G and a blue light-emitting element 190G. 90B, a light-shielding layer 219a is provided between the The display device 10 shown in FIGS. 6A and 7A is similar to the display device 10 shown in FIGS. 6A and 7A in that a filled hollow sealing structure is applied. Different from K.

[0177] As in the display device 10M, the light-shielding layer 219a is disposed between the light-emitting element 190R and the light-receiving element 110. , and may be provided between the light emitting element 190G and the light emitting element 190B.

[0178] [Display device 10N] 9A shows a top view of the display device 10N. 10A shows a cross-sectional view of the area between the dashed line A9-A10 in FIG. 9A. vinegar.

[0179] The cross-sectional structure of the display device 10N (FIG. 9A) taken along the dashed line A3-A4 is the same as that of the display device 10K. (FIG. 7A) or the same configuration as the display device 10M (FIG. 8B) can be applied. may be applied.

[0180] The display device 10N has a light-shielding layer 219a having a top surface shape and a cross-sectional shape similar to those of the display device 10K (FIG. 6A and Figure 6B).

[0181] In a top view (also referred to as a plan view), the light-shielding layer 219a surrounds the four sides of the light-receiving element 110. The light-shielding layer 219a has a gap 220 (cut) between its two ends. The red light-emitting element 190R is located on the red light-emitting element 190R side. Here, if the light source used for sensing is only a light emitting element of a specific color, The gap 220 in the light-shielding layer 219a is positioned on the side of the light-emitting element different from the light-emitting element used for sensing. For example, in the case of the display device 10N, it is preferable to use a green light emitting element 190G or It is preferable to use a blue light emitting element 190B for sensing. The effect of noise during scanning can be suppressed. When sensing is performed using the light blocking layer 219a, as shown in the region 230, one end of the light blocking layer 219a is covered with a green It is preferable that the light emitting element 190G protrudes toward the red light emitting element 190R. As a result, stray light from the green light emitting element 190G passes through the gap 220 and reaches the light receiving element 11. It is possible to suppress incidence at 0.

[0182] The partition wall 216 has an opening between the light receiving element 110 and the light emitting element 190R. The light-shielding layer 219a is provided to cover the opening of the partition wall 216. It is preferable that the light-shielding layer 219a covers the opening and the side surface of the partition wall 216 exposed at the opening. , and further preferably covers at least a portion of the upper surface of the partition wall 216 .

[0183] The light-shielding layer 219a may have an inverse tapered shape. The thickness of the organic film and the common electrode 115 to be shielded is thinner near the side of the light-shielding layer 219a. Furthermore, voids 160 may occur near the side surfaces of the light-shielding layer 219a.

[0184] Here, the light-shielding layer 219a surrounds all four sides of the light-receiving element 110 when viewed from above. Then, the common electrode 115 is broken by the light-shielding layer 219a, and the inside and outside of the light-shielding layer 219a are separated. Therefore, the upper surface of the light-shielding layer 219a may be shaped as follows: The four sides of the light receiving element 110 are surrounded, and one end is spaced from the other end. By providing the common electrode 115, it is possible to prevent the common electrode 115 from being separated. This can suppress display defects in N.

[0185] 10A is a cross-sectional view including the gap 220 of the light-shielding layer 219a. 16, similar to the shape of the upper surface of the light-shielding layer 219a, surrounds the four sides of the light-receiving element 110 and The openings are formed such that the ends of the openings are spaced apart from each other. In this example, the common layer 112, the common layer 114, the common electrode 115, and the protective layer 11 are formed on the partition wall 216. 6 are provided in order.

[0186] [Display device 10P] FIG. 10B shows a cross-sectional view of the display device 10P.

[0187] The display device 10P has a side wall 219c that contacts the side surface of the light-shielding layer 219a. Different from 10N.

[0188] In the display device 10P, the upper surface of the light-shielding layer 219a has a frame shape as shown in FIG. 6A. 9A, it may have a gap 220.

[0189] By providing a side wall 219c that contacts the side surface of the inversely tapered light-shielding layer 219a, the organic film and The coverage of the common electrode 115 and the like can be improved, and the display quality of the display device can be improved. By increasing the coverage of the common electrode 115, it is possible to prevent the common electrode 115 from being broken or thinned. Since film formation can be suppressed, uneven brightness of the display caused by a voltage drop in the common electrode 115 can be suppressed. It is possible.

[0190] The side wall 219c can be formed using the material that can be used for the partition wall 216.

[0191] [Display device 10Q] 11A and 11B are cross-sectional views of the display device 10Q. The same top surface structure as that of 10K (FIG. 6A) can be applied. 11B shows a cross-sectional view taken along the dashed line A1-A2 in FIG. A cross-sectional view of the 4 section is shown.

[0192] The display device 10Q differs from the display device 10K in that it does not have the partition wall 216 but has the partition wall 217. varies.

[0193] The light-shielding layer 219a is located on the partition wall 217. Unlike the partition wall 216, the partition wall 217 has a light-emitting Since the light emitted by the optical element can be absorbed, there is no need to provide an opening in the partition wall 217. Stray light 23d incident on the partition wall 217 from the optical element is absorbed by the partition wall 217. Stray light 23d incident on the light-shielding layer 219a from the light-shielding layer 219a is absorbed by the light-shielding layer 219a.

[0194] The spacer 219b is located between the light emitting element 190G and the light emitting element 190B. The upper surface of 219b is preferably closer to the light-shielding layer 158 than the upper surface of 219a. If the thickness of the spacer 219b is thinner than the thickness of the light-shielding layer 219a, the inside of the frame-shaped light-shielding layer 219a The adhesive layer 142 is not sufficiently filled on the side, and the light receiving element 110 and further the signal of the display device 10Q are not sufficiently filled. Therefore, the spacer 219b is thicker than the light-shielding layer 219a. This makes it easier to fill the adhesive layer 142. As shown, in the area where the spacer 219b and the light-shielding layer 158 overlap, the light-shielding layer 158 It may be in contact with the protective layer 116 (or the common electrode 115).

[0195] Hereinafter, a more detailed configuration of a display device according to one embodiment of the present invention will be described with reference to FIGS. 12 to 16. and explain.

[0196] [Display device 100A] FIG. 12 shows a perspective view of the display device 100A, and FIG. 13 shows a cross-sectional view of the display device 100A. vinegar.

[0197] The display device 100A has a configuration in which a substrate 152 and a substrate 151 are bonded together. , the substrate 152 is clearly shown by the dashed line.

[0198] The display device 100A includes a display unit 162, a circuit 164, wiring 165, etc. 1 shows an example in which an IC (integrated circuit) 173 and an FPC 172 are mounted on a display device 100A. Therefore, the configuration shown in FIG. 12 is a display device having a display device 100A, an IC, and an FPC. It can also be called a display module.

[0199] The circuit 164 can be, for example, a scanning line driver circuit.

[0200] The wiring 165 has a function of supplying signals and power to the display portion 162 and the circuit 164. The signals and power are transmitted from the outside via the FPC 172 or from the IC 173 to the wiring 165. is entered.

[0201] In Figure 12, the COG (Chip On Glass) method or COF (Chip on 1 shows an example in which an IC 173 is provided on a substrate 151 by a film method or the like. 73 can be an IC having a scanning line driving circuit or a signal line driving circuit, for example. The display device 100A and the display module may be configured without an IC. The IC may be mounted on the FPC using a COF method or the like.

[0202] FIG. 13 shows a part of the area including the FPC 172, a part of the circuit 164, and a display panel 166 of the display device 100A. 10A and 10B are cross-sectional views of a part of the display unit 162 and a part of the region including the end portion. show.

[0203] The display device 100A shown in FIG. 13 includes a transistor 201 between a substrate 151 and a substrate 152. , a transistor 205, a transistor 206, a light-emitting element 190, a light-receiving element 110, etc. do.

[0204] The resin layer 159 and the insulating layer 214 are bonded together via an adhesive layer 142. A solid sealing structure or a hollow sealing structure can be applied to seal the light receiving element 110. In the example shown in FIG. 3, a space 143 surrounded by a substrate 152, an adhesive layer 142, and a substrate 151 is filled with an inert gas. The adhesive layer 1 is filled with gas (nitrogen, argon, etc.) and has a hollow sealing structure. The substrate 42 may be provided overlapping the light emitting element 190 and the light receiving element 110. The space 143 surrounded by the adhesive layer 142 and the substrate 151 is a space different from the adhesive layer 142. It may be filled with a resin.

[0205] The light emitting element 190 is made up of, from the insulating layer 214 side, a pixel electrode 191, a common layer 112, a light emitting layer 193, The pixel electrode 191 has a laminated structure in which the common layer 114 and the common electrode 115 are laminated in this order. The conductive layer 222 of the transistor 206 is connected to the insulating layer 214 through an opening provided in the insulating layer 214. It is connected to b.

[0206] The edge of the pixel electrode 191 is covered by a partition wall 217. The common electrode 115 comprises a material that is transparent to visible light.

[0207] The light receiving element 110 is made up of, from the insulating layer 214 side, a pixel electrode 181, a common layer 112, an active layer 183, The pixel electrode 181 has a laminated structure in which the common layer 114 and the common electrode 115 are laminated in this order. The conductive layer 222 of the transistor 205 is connected to the insulating layer 214 through an opening provided in the insulating layer 214. The edge of the pixel electrode 181 is covered with a partition wall 217. The pixel electrode 181 contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light. Includes ingredients.

[0208] The light emitted by the light emitting element 190 is emitted to the substrate 152 side. Light is incident through the substrate 152 and the space 143. The substrate 152 has a transparent layer for visible light. It is preferable to use a material with high permeability.

[0209] The pixel electrode 181 and the pixel electrode 191 can be manufactured using the same material and the same process. The common layer 112, the common layer 114, and the common electrode 115 are connected to the light receiving element 110 and the light emitting element 19. The light receiving element 110 and the light emitting element 190 are both made up of an active layer 183 and a light emitting layer The configuration of the 193 can be made the same as the other components. The light receiving element 110 can be built into the display device 100A without significantly increasing the size.

[0210] A resin layer 159 and a light-shielding layer 158 are provided on the surface of the substrate 152 facing the substrate 151 . The resin layer 159 is provided at a position overlapping the light-emitting element 190 and at a position overlapping the light-receiving element 110. The light-shielding layer 158 is not provided on the surface of the substrate 152 facing the substrate 151, the surface of the resin layer 159, or the like. The light-shielding layer 158 is provided to cover the surface of the light-receiving element 151 and the surface of the resin layer 159 on the substrate 151 side. The light-shielding layer 158 has openings at positions overlapping the light-emitting element 110 and the light-emitting element 190. By providing the light receiving element 110, it is possible to control the range in which the light is detected. By providing the layer 158, light is transmitted from the light emitting element 190 to the light receiving element 110 without passing through the object. Therefore, a sensor with low noise and high sensitivity can be realized. By providing the resin layer 159, the distance from the light-shielding layer 158 to the light-emitting element 190 can be reduced. This can be made shorter than the distance from the light-shielding layer 158 to the light-receiving element 110. This reduces the sensor noise while suppressing the viewing angle dependency of the display. This makes it possible to improve both the display quality and the image quality.

[0211] The configuration of the partition walls 217 and the light-shielding layer 219a in the display device 100A is the same as that of the display device 10Q (FIG. 11A).

[0212] The partition wall 217 covers the end of the pixel electrode 181 and the end of the pixel electrode 191. A light-shielding layer 219a is provided on the light-receiving element 110. The light-shielding layer 219a is The partition wall 217 and the light-shielding layer 219a are located between the light-receiving element 110 and the light-receiving element 190. It is preferable that the wavelength of light that is incident on the light receiving element 110 is absorbed. It can be suppressed.

[0213] The transistor 201, the transistor 205, and the transistor 206 are all connected to the substrate 1. These transistors are fabricated using the same materials and processes. It can be manufactured.

[0214] On the substrate 151, an insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are formed. The insulating layer 211 has a portion serving as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. An insulating layer 215 is provided over the transistor. An insulating layer 214 is provided over the transistor. The number of gate insulating layers and the number of transistors are determined by the number of gate insulating layers. The number of insulating layers covering the star is not limited, and each may be a single layer or two or more layers.

[0215] At least one insulating layer covering the transistor is made of a material that is resistant to the diffusion of impurities such as water and hydrogen. It is preferable to use a material such that the insulating layer can function as a barrier layer. This structure effectively prevents impurities from diffusing into the transistor from the outside. This effectively suppresses the noise and improves the reliability of the display device.

[0216] The insulating layers 211, 213, and 215 are each made of an inorganic insulating film. As the inorganic insulating film, for example, a silicon nitride film or a silicon oxynitride film is preferable. , silicon oxide film, silicon nitride oxide film, aluminum oxide film, aluminum nitride film, etc. Inorganic insulating films such as hafnium oxide film, yttrium oxide film, and oxide film can be used. Zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film Alternatively, a silicon oxide film, a cerium oxide film, a neodymium oxide film, or the like may be used. The above layers may be used in a laminated state.

[0217] Here, organic insulating films often have lower barrier properties than inorganic insulating films. The insulating film preferably has an opening near the edge of the display device 100A. Therefore, it is possible to prevent impurities from entering from the end of the display device 100A through the organic insulating film. Alternatively, the organic insulating film may be arranged so that the edge of the organic insulating film is located inside the edge of the display device 100A. An insulating film may be formed so that the organic insulating film is not exposed at the edge of the display device 100A.

[0218] An organic insulating film is suitable for the insulating layer 214 that functions as a planarizing layer. Materials that can be used include acrylic resin, polyimide resin, epoxy resin, polyamide resin, resin, polyimide amide resin, siloxane resin, benzocyclobutene resin, phenol resins, and precursors of these resins.

[0219] In the region 228 shown in FIG. 13, an opening is formed in the insulating layer 214. Even when an organic insulating film is used for the layer 214, the display unit 1 Therefore, the reliability of the display device 100A can be improved. It can be done.

[0220] Transistor 201, transistor 205, and transistor 206 function as gates. a conductive layer 221 serving as a gate insulating layer; an insulating layer 211 serving as a source and drain insulating layer; the conductive layer 222a and the conductive layer 222b, the semiconductor layer 231, and the gate insulating layer The insulating layer 213 functions as a gate, and the conductive layer 223 functions as a gate. The same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 221 and the semiconductor layer 231. It is located between the conductive layer 223 and the semiconductor layer 231 .

[0221] The structure of a transistor included in the display device of this embodiment is not particularly limited. Uses a staggered transistor, a staggered transistor, an inverted staggered transistor, etc. In addition, either a top-gate type or a bottom-gate type transistor structure can be used. Alternatively, gates may be provided above and below the semiconductor layer where the channel is formed. Good too.

[0222] The transistor 201, the transistor 205, and the transistor 206 have channels. The structure in which the semiconductor layer formed by the gate is sandwiched between two gates is applied. Alternatively, the transistors may be driven by supplying the same signal to these. One of the two gates is given a potential to control the threshold voltage, and the other is given a potential to drive the The threshold voltage of the transistor may be controlled by applying a potential.

[0223] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor with crystallinity (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or semiconductor with a partially crystalline region) If a semiconductor having crystallinity is used, This is preferable because it can suppress deterioration of the resistor characteristics.

[0224] The semiconductor layer of the transistor preferably contains a metal oxide (also called an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may contain silicon. are amorphous silicon, crystalline silicon (low-temperature polysilicon, single-crystal silicon, etc.) ) etc.

[0225] The semiconductor layer may be made of, for example, indium and M (M is gallium, aluminum, silicon, fluorine, etc.). Uron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, gel Al, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, one or more selected from the group consisting of tantalum, tungsten, and magnesium), zinc, In particular, M is aluminum, gallium, yttrium, and sulphur. It is preferable that the organic solvent is one or more selected from the group consisting of:

[0226] In particular, the semiconductor layer contains indium (In), gallium (Ga), and zinc (Zn). It is preferable to use IGZO (Indium Zirconate Oxide).

[0227] When the semiconductor layer is an In-M-Zn oxide, the In atoms in the In-M-Zn oxide The atomic ratio of In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. The atomic ratio of elements is In:M:Zn=1:1:1 or a composition close to that. Zn=1:1:1.2 or a similar composition, In:M:Zn=2:1:3 or a similar composition Near composition, In:M:Zn=3:1:2 or nearby composition, In:M:Zn=4:2 :3 or a composition thereof, In:M:Zn=4:2:4.1 or a composition thereof, I n:M:Zn=5:1:3 or a composition close thereto, In:M:Zn=5:1:6 or a composition close thereto In:M:Zn=5:1:7 or a composition in the vicinity thereof, In:M:Zn=5 :1:8 or a composition thereof, In:M:Zn=6:1:6 or a composition thereof, I Examples include compositions of n:M:Zn=5:2:5 or the vicinity thereof. includes a range of ±30% of the desired atomic ratio.

[0228] For example, when describing a composition with an atomic ratio of In:Ga:Zn=4:2:3 or a composition in the vicinity When the atomic ratio of In is 4, the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is This includes cases where the ratio is 2 or more and 4 or less. Also, the atomic ratio is In:Ga:Zn=5:1:6 or less. When describing a composition in the vicinity of or near the atomic ratio of Ga, the atomic ratio of In is set to 5. This includes cases where the atomic ratio of Zn is greater than 0.1 and less than 2, and the atomic ratio of Zn is greater than 5 and less than 7. In addition, when describing a composition in which the atomic ratio is In:Ga:Zn=1:1:1 or in the vicinity thereof, When the atomic ratio of n is 1, the atomic ratio of Ga is greater than 0.1 and is not greater than 2, and Zn This includes cases where the atomic ratio is greater than 0.1 and less than 2.

[0229] The transistors included in the circuit 164 and the transistors included in the display portion 162 have the same structure. The circuit 164 may have a plurality of transistors, or may have a different structure. The structures may all be the same, or there may be two or more types. The structures of the plurality of transistors may all be the same, or there may be two or more types.

[0230] A connection portion 204 is provided in the area of the substrate 151 where the substrate 152 does not overlap. In the portion 204, the wiring 165 is electrically connected to the FPC 172 via the conductive layer 166 and the connection layer 242. The upper surface of the connection portion 204 is made of the same conductive film as the pixel electrode 181. The resulting conductive layer 166 is exposed. This allows the connection portion 204 and the FPC 172 to be connected. Electrical connection can be made via interconnect layer 242.

[0231] Various optical members can be arranged on the outside of the substrate 152. Examples of optical members include a polarizing plate. Examples of the optical film include a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light collecting film. The outside of the substrate 152 is coated with an anti-static film to prevent dust from adhering, It is equipped with a water-repellent film that protects the surface, a hard coating that prevents scratches from occurring during use, and an impact absorbing layer. It may be placed.

[0232] The substrates 151 and 152 are made of glass, quartz, ceramic, sapphire, resin, etc. The substrate 151 and the substrate 152 may be made of a flexible material. This can increase the flexibility of the display device.

[0233] The adhesive layer may be a photo-curable adhesive such as an ultraviolet curable adhesive, a reaction-curable adhesive, or a heat-curable adhesive. Various curing adhesives such as elastomeric adhesives and anaerobic adhesives can be used. epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide Resin, PVC (Polyvinyl Chloride) Resin, PVB (Polyvinyl Butyral) Resin, EV A (ethylene vinyl acetate) resins, etc. In particular, epoxy resins, etc., which have high moisture permeability, A material with low viscosity is preferable. Two-component resin may also be used. An adhesive sheet or the like may also be used. It's fine.

[0234] The connection layer 242 is made of an anisotropic conductive film (ACF). Conductive Film), Anisotropic Conductive Paste (ACP) Conductive Paste) can be used.

[0235] The light emitting element 190 may be a top emission type, a bottom emission type, a dual emission type, or a The electrode on the light extraction side uses a conductive film that transmits visible light. For the electrode on the side from which light is not extracted, it is preferable to use a conductive film that reflects visible light.

[0236] The light-emitting element 190 has at least a light-emitting layer 193. As the outer layer, a material with high hole injection properties, a material with high hole transport properties, a hole blocking material, an electron A material with high transport properties, a material with high electron injection properties, or a bipolar material (electron transport properties and For example, the common layer 112 may further include a layer containing a material having a high hole transporting property. It is preferable that the common layer 1 has one or both of a hole injection layer and a hole transport layer. The layer 14 preferably has one or both of an electron transport layer and an electron injection layer.

[0237] The hole injection layer is a layer that injects holes from the anode into the light emitting element and contains a material with high hole injection properties. The material with high hole injection properties is an aromatic amine compound or a hole transport material. A composite material containing an acceptor material (electron-accepting material) can be used.

[0238] In the light-emitting device, the hole transport layer transports holes injected from the anode through the hole injection layer to emit light. In a light-receiving element, the hole transport layer is a layer that transports light incident on the active layer. The hole transport layer is a layer that transports holes generated by the electron transporting material to the anode. As a hole transport material, 10 -6 cm 2 Materials with hole mobility of / Vs or higher It is preferable that the above-mentioned materials are used as long as they have a higher hole transporting property than electron transporting property. As the hole transporting material, a π-electron rich heteroaromatic compound (e.g., benzol derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines (aromatic amino A material having a high hole transporting property, such as a compound having a silane skeleton, is preferred.

[0239] In the light-emitting device, the electron transport layer transports electrons injected from the cathode through the electron injection layer to emit light. In a light-receiving element, the electron transport layer is a layer that transports electrons to the active layer. The electron transport layer is a layer that transports electrons generated by the electron transporting material to the cathode. As an electron transport material, -6 cm 2 / Vs or higher electron mobility In addition, other materials that have a higher electron transporting property than holes are also preferable. As the electron transport material, metal complexes having a quinoline skeleton, benzophenones, Metal complexes having an oxazole skeleton, metal complexes having an oxazole skeleton, and metal complexes having a thiazole skeleton In addition to metal complexes having the formula (I), oxadiazole derivatives, triazole derivatives, imidazole Derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives Quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoline derivatives Noxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other nitrogen-containing compounds Materials with high electron transport properties, such as π-electron deficient heteroaromatic compounds, including heteroaromatic compounds, are used. You can be there.

[0240] The electron injection layer is a layer that injects electrons from the cathode into the light emitting element and contains a material with high electron injection properties. The material with high electron injection properties is an alkali metal, an alkaline earth metal, or The compounds can be used as the material with high electron injection properties. A composite material containing a donor material (electron donating material) can also be used.

[0241] The common layer 112, the light-emitting layer 193, and the common layer 114 contain low-molecular-weight compounds and high-molecular-weight compounds. The common layer 112 and the light-emitting layer 1 may contain an inorganic compound. The layers constituting the common layer 114 and the layer 93 are formed by deposition (including vacuum deposition), transfer, respectively. The film can be formed by a method such as a printing method, an ink jet method, or a coating method.

[0242] The light-emitting layer 193 is a layer containing a light-emitting material. The luminescent materials include blue, purple, blue-purple, green, yellow-green, yellow A material that emits light of a color such as red, orange, or near-infrared light is used as the light-emitting material. It is also possible to use a substance that emits light.

[0243] The active layer 183 of the light receiving element 110 includes a semiconductor, such as silicon. Examples of the active material include inorganic semiconductors and organic semiconductors containing organic compounds. An example in which an organic semiconductor is used as the semiconductor in the layer is shown below. The light-emitting layer 193 of the photonic device 190 and the active layer 183 of the photodetector 110 are formed by the same method (e.g., This is preferable because it allows the use of common manufacturing equipment.

[0244] The active layer 183 is made of an n-type semiconductor material, such as fullerene (e.g., C 60 , C 70 etc. ) or its derivatives. As a p-type semiconductor material, copper(II) phthalocyanine (Copper(II) phthalocyanine (CuPc) and tetraphenyldibenzoperiflanthene (Tetraphenyldibenzoperiflanthene; DBP), zinc Electron donating properties of phthalocyanine (Zinc Phthalocyanine; ZnPc) As a p-type semiconductor material, tin phthalocyanine ( SnPc) may also be used.

[0245] For example, the active layer 183 is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor. .

[0246] In addition to the gate, source, and drain of the transistor, various wiring and power supply components that make up the display device are also included. Materials that can be used for the conductive layers such as electrodes include aluminum, titanium, chromium, and nickel. Nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten These materials include metals such as tungsten, as well as alloys that contain these metals as their main components. The film containing the compound can be used as a single layer or as a laminate structure.

[0247] Examples of the light-transmitting conductive material include indium oxide, indium tin oxide, and indium tin oxide. Conductive oxides such as gallium zinc oxide, zinc oxide, zinc oxide containing gallium, or graphite Alternatively, gold, silver, platinum, magnesium, nickel, tungsten, Metallic materials such as nickel, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium Alternatively, an alloy material containing the metal material can be used. Alternatively, a nitride of the metal material (e.g., For example, titanium nitride) may be used. When using a material, it is preferable to make it thin enough to have light-transmitting properties. For example, a laminated film of an alloy of silver and magnesium and an indium alloy can be used as the conductive layer. It is preferable to use a laminated film of tungsten oxide or the like, since this can increase the conductivity. These include conductive layers such as various wirings and electrodes that constitute a display device, and conductive layers that a display element has. It can also be used for a conductive layer that functions as a pixel electrode or a common electrode.

[0248] Examples of insulating materials that can be used for each insulating layer include acrylic resin and epoxy resin. Resins such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, oxide Examples of the insulating material include inorganic insulating materials such as aluminum.

[0249] [Display device 100B] FIG. 14A shows a cross-sectional view of the display device 100B.

[0250] The display device 100B has a protective layer 116 and a solid sealing structure. The difference from the display device 100A is mainly as follows.

[0251] By providing a protective layer 116 that covers the light receiving element 110 and the light emitting element 190, and the light-emitting element 190, and prevents impurities such as water from entering the light-receiving element 110 and the light-emitting element 190. The reliability of the element 190 can be improved.

[0252] In a region 228 near the edge of the display device 100B, an insulating layer 214 is formed through an opening in the insulating layer 214. It is preferable that the insulating layer 215 and the protective layer 116 contact each other. It is preferable that the inorganic insulating film and the inorganic insulating film of the protective layer 116 are in contact with each other. This prevents impurities from entering the display section 162 from the outside via the organic insulating film. Therefore, the reliability of the display device 100B can be improved.

[0253] 14B shows an example in which the protective layer 116 has a three-layer structure. The inorganic insulating layer 116a on the common electrode 115 and the organic insulating layer 11 on the inorganic insulating layer 116a are 6b and an inorganic insulating layer 116c on the organic insulating layer 116b.

[0254] The ends of the inorganic insulating layer 116a and the inorganic insulating layer 116c are closer to each other than the ends of the organic insulating layer 116b. The inorganic insulating layer 116a extends outward and contacts the insulating layer 214( The insulating layer 215 (inorganic insulating layer) is in contact with the insulating layer 215 through the opening in the insulating layer 215. The layer 215 and the protective layer 116 can surround the light receiving element 110 and the light emitting element 190. Therefore, the reliability of the light receiving element 110 and the light emitting element 190 can be improved.

[0255] In this way, the protective layer 116 may have a laminated structure of an organic insulating film and an inorganic insulating film. In this case, it is preferable that the end of the inorganic insulating film extends further outward than the end of the organic insulating film.

[0256] In the display device 100B, the protective layer 116 and the substrate 152 are bonded together by the adhesive layer 142. The adhesive layer 142 overlaps the light receiving element 110 and the light emitting element 190, respectively. The display device 100B has a solid sealing structure.

[0257] [Display device 100C] 15 and 16A show cross-sectional views of the display device 100C. The display device 100C is similar to the display device 100A (FIG. 12). 72, a part of the circuit 164, and a part of the display unit 162 are cut out. 16A shows an example of a cross section of a part of the display unit 162 of the display device 100C. 15 shows an example of a cross section of the display unit 162, particularly the light receiving element 1 10 and an example of a cross section of a region including a light emitting element 190R that emits red light. In FIG. 16A, the display unit 162 includes a light emitting element 190G that emits green light and a light emitting element 190B that emits blue light. 1 shows an example of a cross section of a region including a light emitting element 190B that emits light.

[0258] The display device 100C shown in FIGS. 15 and 16A has a transistor between the substrate 153 and the substrate 154. Transistor 203, transistor 207, transistor 208, transistor 209, The resistor 210, the light-emitting element 190R, the light-emitting element 190G, the light-emitting element 190B, and the light-receiving element 110 etc.

[0259] The resin layer 159 and the common electrode 115 are bonded together via an adhesive layer 142, and the display device 10 The 0C uses a solid sealing structure.

[0260] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The insulating layer 157 is bonded to the substrate 151 by an adhesive layer 156 .

[0261] The display device 100C is manufactured by first forming the insulating layer 212, the transistors, and the light-receiving element. 110, a first fabrication substrate on which each light emitting element and the like are provided, an insulating layer 157, a resin layer 159, and and a second substrate on which a light-shielding layer 158 and the like are provided, are bonded together by an adhesive layer 142. Then, the first substrate is peeled off, and the substrate 153 is attached to the exposed surface, and the second substrate is peeled off. By attaching a substrate 154 to the separated and exposed surface, a pattern is formed on the first fabrication substrate and the second fabrication substrate. The formed components are then transferred to the substrates 153 and 154. Each of the first and second electrodes preferably has flexibility. can be increased.

[0262] The insulating layer 212 and the insulating layer 157 are respectively formed by the insulating layer 211, the insulating layer 213, and the insulating layer 157. An inorganic insulating film that can be used for the layer 215 can be used.

[0263] The light emitting element 190R is made up of a pixel electrode 191R, a common layer 112, a light emitting layer 191R, and a light emitting layer 191R. 93R, a common layer 114, and a common electrode 115 are laminated in this order. The electrode 191R is connected to the conductive layer 169R through an opening provided in the insulating layer 214b. The conductive layer 169R is connected to the transistor 20 through an opening provided in the insulating layer 214a. The conductive layer 222b is connected to the conductive layer 222b provided in the insulating layer 215. The pixel electrode 191R is connected to the low resistance region 231n through the opening. The transistor 208 is electrically connected to the light-emitting element 190R. It has the function of controlling the drive of the

[0264] Similarly, the light emitting element 190G includes, from the insulating layer 214b side, a pixel electrode 191G, a common layer 112, The light-emitting layer 193G, the common layer 114, and the common electrode 115 are laminated in this order. The pixel electrode 191G is connected to the conductive layer 169G and the conductive layer 222b of the transistor 209 via the conductive layer 169G. 231n of the transistor 209. 191G is electrically connected to the transistor 209. The transistor 209 It has the function of controlling the driving of the optical element 190G.

[0265] The light emitting element 190B is composed of, from the insulating layer 214b side, a pixel electrode 191B, a common layer 112, The light-emitting layer 193B, the common layer 114, and the common electrode 115 are laminated in this order. The pixel electrode 191B is connected to the conductive layer 169B and the conductive layer 222b of the transistor 210 via the conductive layer 169B. 231n of the transistor 210. That is, the pixel electrode 191B is electrically connected to the transistor 210. The transistor 210 It has the function of controlling the driving of the optical element 190B.

[0266] The light receiving element 110 is made up of a pixel electrode 181, a common layer 112, an active layer 183, and a dielectric layer 184. , a common layer 114, and a common electrode 115 are laminated in this order. 1 is connected to the transistor 2 through the conductive layer 168 and the conductive layer 222b of the transistor 207. 07. That is, the pixel electrode 181 is electrically connected to the low resistance region 231n of the transistor. It is electrically connected to the power supply 207.

[0267] The ends of the pixel electrodes 181, 191R, 191G, and 191B are covered with partition walls 216. The pixel electrodes 181, 191R, 191G, and 191B contain a material that reflects visible light. The common electrode 115 includes a material that transmits visible light.

[0268] The light emitted from the light emitting elements 190R, 190G, and 190B is emitted toward the substrate 154. Light is incident on the light receiving element 110 via the substrate 154 and the adhesive layer 142. It is preferable that 4 be made of a material that is highly transparent to visible light.

[0269] The pixel electrode 181 and the pixel electrode 191 can be manufactured using the same material and the same process. The common layer 112, the common layer 114, and the common electrode 115 are connected to the light receiving element 110 and the light emitting element 111. The light receiving element 110 and the light emitting element of each color are used in common for 90R, 190G, and 190B. The structures of the active layer 183 and the light-emitting layer are different, but the structures of the two layers can be the same. This allows the light receiving element 110 to be built into the display device 100C without significantly increasing the number of manufacturing steps. It is possible.

[0270] A resin layer 159 and a light-shielding layer 158 are provided on the surface of the insulating layer 157 facing the substrate 153. The resin layer 159 is provided at a position overlapping the light emitting elements 190R, 190G, and 190B. The light-shielding layer 158 is not provided in a position that overlaps the optical element 110. 3 side surface, the side surface of the resin layer 159, and the surface of the resin layer 159 on the substrate 153 side. The light-shielding layer 158 is formed at a position overlapping the light-receiving element 110 and at a position overlapping the light-emitting elements 190R, 190G, and 190C. 90B. The light detection range of the light-shielding layer 158 can be controlled. Light is incident on the light receiving element 110 from the light emitting elements 190R, 190G, and 190B without passing through the object. Therefore, a sensor with low noise and high sensitivity can be realized. By providing the resin layer 159, the distance from the light-shielding layer 158 to the light-emitting element of each color is This is shorter than the distance from the light-shielding layer 158 to the light-receiving element 110. Therefore, the display quality and viewing angle dependency of the display can be improved. This can improve both the image quality and the image quality.

[0271] The partition walls 216, the light-shielding layers 219a, and the spacers 219b in the display device 100C are configured as follows: , similar to the display device 10K (FIGS. 6B and 7A).

[0272] In FIG. 15, the partition wall 216 has an opening between the light receiving element 110 and the light emitting element 190R. The light-shielding layer 219a is provided to fill the opening. The light-shielding layer 219a is located between the substrate 110 and the light-emitting element 190R. This makes it possible to suppress stray light from entering the light receiving element 110. do.

[0273] The spacer 219b is located between the light emitting element 190G and the light emitting element 190B. The upper surface of 219b is preferably closer to the light-shielding layer 158 than the upper surface of the light-shielding layer 219a. For example, the sum of the height (thickness) of the partition wall 216 and the height (thickness) of the spacer 219b is equal to or greater than the height (thickness) of the light-shielding layer 21. It is preferable that the height (thickness) of the adhesive layer 142 is larger than the height (thickness) of the adhesive layer 142. As shown in FIG. 16A, the spacer 219b and the light-shielding layer 158 overlap each other. In some parts, the light-shielding layer 158 may be in contact with the common electrode 115 (or the protective layer).

[0274] A connection portion 204 is provided in the area of the substrate 153 where the substrate 154 does not overlap. In the portion 204, the wiring 165 is connected to the F via the conductive layer 167, the conductive layer 166, and the connection layer 242. The conductive layer 167 is electrically connected to the PC 172. The conductive layer 167 is made of the same conductive film as the conductive layer 168. The upper surface of the connection portion 204 is formed by applying the same conductive film as the pixel electrode 181. The conductive layer 166 obtained by the process is exposed. can be electrically connected via the connection layer 242.

[0275] Transistor 207, transistor 208, transistor 209, and transistor 21 0 is a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a semiconductor layer having a channel forming region 231i and a pair of low resistance regions 231n; The conductive layer 222a is connected to one of the pair of low resistance regions 231n, and the conductive layer 222b is connected to the other of the pair of low resistance regions 231n. a conductive layer 222b connecting the gate electrode to the insulating layer 225; The insulating layer 211 includes a conductive layer 223 and an insulating layer 215 that covers the conductive layer 223. The insulating layer 225 is located between the conductive layer 221 and the channel forming region 231i. 23 and the channel forming region 231i.

[0276] The conductive layer 222a and the conductive layer 222b are each formed through an opening in the insulating layer 215. One of the conductive layer 222a and the conductive layer 222b is connected to the low resistance region 231n. One acts as a source and the other acts as a drain.

[0277] In FIG. 15, the insulating layer 225 overlaps the channel forming region 231i of the semiconductor layer 231, and For example, the insulating layer 225 is processed using the conductive layer 223 as a mask. 15. In FIG. 15, the insulating layer 225 and the conductive layer 22 An insulating layer 215 is provided to cover the conductive layers 222a and 222b. The conductive layers 222b are connected to the low resistance regions 231n. A protective layer 116 may be provided to cover the

[0278] On the other hand, in the transistor 202 shown in FIG. 16B, the insulating layer 225 is formed on the top and side surfaces of the semiconductor layer. The conductive layer 222a and the conductive layer 222b are covered with the insulating layer 225 and the insulating layer 226, respectively. It is connected to the low resistance region 231n through an opening provided in the edge layer 215.

[0279] [Metal oxides] Metal oxides applicable to the semiconductor layer will be described below.

[0280] In this specification and the like, metal oxides containing nitrogen are also referred to as metal oxides. Nitrogen-containing metal oxides are also called metal oxynitrides (met). For example, zinc oxynitride (ZnON) Any nitrogen-containing metal oxide may be used for the semiconductor layer.

[0281] In this specification and the like, CAAC (c-axis aligned crystal ), and CAC (Cloud-Aligned Composite) CAAC represents an example of a crystal structure, and CAC represents an example of a function or material configuration.

[0282] For example, the semiconductor layer is made of CAC (Cloud-Aligned Composite)-O S (Oxide Semiconductor) can be used.

[0283] CAC-OS or CAC-metal oxide is a material that has the function of conductivity in some parts. The material has an insulating function in part and a semiconductor function in the whole. Note that CAC-OS or CAC-metal oxide is used as a semiconductor for transistors. When used in a layer, the conductive function is to allow electrons (or holes) to flow as carriers. The insulating function is to prevent the flow of electrons, which act as carriers. By making the functions of the two complementary to each other, the switching function (On / Off) is realized. CAC-OS or CAC-metal oxide is given the function of In CAC-OS or CAC-metal oxide, By separating the functions, the functionality of both can be maximized.

[0284] In addition, CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. In addition, the conductive region and the insulating region are formed at the nanoparticle level in the material. The conductive and insulating regions may be separated by a thin film. In addition, the conductive area may be observed as a cloud-like connected area with a blurred periphery. This may be the case.

[0285] In addition, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region are The peripheral region is 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. The following sizes may be dispersed in the material:

[0286] In addition, CAC-OS or CAC-metal oxide has different band gaps. For example, CAC-OS or CAC-metal oxidized de is a component with a wide gap due to the insulating region and a component with a narrow gap due to the conductive region. In this configuration, when carriers flow, In the narrow gap component, carriers mainly flow. The component having a wide gap acts complementary to the component having a narrow gap. Carriers also flow into the wide-gap component in conjunction with the component with a wide gap. AC-OS or CAC-metal oxide is placed in the channel formation region of the transistor. When used, the transistor has a high current driving force in the on state, i.e., a large on-current. Furthermore, high field-effect mobility can be obtained.

[0287] That is, CAC-OS or CAC-metal oxide is a matrix composite material. (matrix composite), or metal matrix composite It can also be called a matrix composite.

[0288] Oxide semiconductors (metal oxides) are divided into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. As a non-single-crystal oxide semiconductor, for example, CAAC-OS (ca xis aligned crystalline oxide semiconductor tor), polycrystalline oxide semiconductor, nc-OS (nanocrystalline oxide de semiconductor), pseudo-amorphous oxide semiconductor (a-like OS: amorphous-like oxide semiconductor), and amorphous and oxide semiconductors.

[0289] CAAC-OS has a c-axis orientation and multiple nanocrystals are connected in the ab-plane direction. The crystal structure has distortion. The distortion is the area where multiple nanocrystals are connected. In the region, the lattice arrangement is changed between a region with a uniform lattice arrangement and another region with a uniform lattice arrangement. Indicates the point where the direction is changing.

[0290] Nanocrystals are basically hexagonal, but they are not limited to regular hexagonal shapes and may be non-regular hexagonal. In addition, the distortion may have a lattice arrangement such as a pentagon or a heptagon. In CAAC-OS, clear grain boundaries are observed even near the strain. It is difficult to confirm the grain boundary due to the distortion of the lattice arrangement. This is because the CAAC-OS has a high SiO2 content in the ab-plane direction. The oxygen atoms are not densely packed, and the bond distance between atoms changes due to the substitution of metal elements. This is because distortion can be tolerated by, for example, adjusting the distortion.

[0291] The CAAC-OS also includes a layer containing indium and oxygen (hereinafter referred to as an In layer) and an element M , zinc, and oxygen layers (hereinafter referred to as (M, Zn) layers) are stacked. It is also called a layered structure. Indium and element M are mutually substitutable. When the element M in the (M,Zn) layer is replaced with indium, the (In,M,Zn) layer and Also, when indium in the In layer is replaced with element M, the (In,M) layer It can also be expressed as:

[0292] CAAC-OS is a metal oxide with high crystallinity. Since it is difficult to identify grain boundaries, the decrease in electron mobility caused by grain boundaries is unlikely to occur. In addition, the crystallinity of metal oxides can be reduced by the incorporation of impurities or the generation of defects. Therefore, CAAC-OS has impurities and defects (oxygen vacancies (V O :oxygen va It can also be said to be a metal oxide with low levels of cations such as cations. Metal oxides with OS have stable physical properties. Metal oxides are heat resistant and highly reliable.

[0293] nc-OS is a material that can be used in microscopic areas (e.g., areas between 1 nm and 10 nm, especially areas between 1 nm and 3 nm). The nc-OS has periodic atomic arrangement in the nanometer range (nm or less). There is no regularity in the crystal orientation between the crystals. Therefore, no orientation is observed throughout the film. Therefore, depending on the analysis method, nc-OS may be distinguished from a-like OS or amorphous oxide semiconductor. It may be difficult to distinguish between the two.

[0294] Indium gallium oxide, a type of metal oxide containing indium, gallium, and zinc, is In the case of IGZO, the nanocrystals mentioned above provide a stable structure. In particular, IGZO tends to have difficulty growing crystals in the atmosphere. Small crystals (e.g., crystals of a few mm or a few cm) are more likely to be formed than large crystals (here, crystals of a few mm or a few cm). , the nanocrystals mentioned above) may be structurally more stable.

[0295] The a-like OS is a metal oxide semiconductor with a structure between the nc-OS and amorphous oxide semiconductor. A-like OS has voids or low density areas. The e-OS has lower crystallinity than the nc-OS and CAAC-OS.

[0296] Oxide semiconductors (metal oxides) have a variety of structures, each with different properties. The oxide semiconductor of one embodiment of the present invention is an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-lik The crystalline structure may have two or more of e-OS, nc-OS, and CAAC-OS.

[0297] The metal oxide film functioning as a semiconductor layer is heated by either an inert gas or an oxygen gas. The metal oxide film can be formed by using both of the oxygen flow rate ratio and the oxygen flow rate ratio. However, in order to obtain a transistor with high field effect mobility, In this case, the oxygen flow rate ratio (oxygen partial pressure) during the deposition of the metal oxide film is 0% or more and 3% or less. 0% or less is preferable, 5% or more and 30% or less is more preferable, and 7% or more and 15% or less is even more preferable. preferable.

[0298] The metal oxide preferably has an energy gap of 2 eV or more, and more preferably 2.5 eV or more. It is more preferable that the energy is 3 eV or more, and even more preferable that the energy is 3 eV or more. By using metal oxides with a wide energy gap, the off-state current of transistors can be reduced. This can be done.

[0299] The substrate temperature during the deposition of the metal oxide film is preferably 350°C or less, and is preferably between room temperature and 200°C. The substrate temperature during the formation of the metal oxide film is more preferably from room temperature to 130° C. If the temperature is room temperature, productivity can be increased, which is preferable.

[0300] The metal oxide film can be formed by sputtering. The D method, PECVD method, thermal CVD method, ALD method, vacuum deposition method, etc. may also be used.

[0301] As described above, the display device of this embodiment has a light receiving element and a light emitting element in the display portion. The display unit has both the function of displaying an image and the function of detecting light. The electronic device can be made smaller and lighter than when a sensor is provided outside the display unit or the display device. In addition, it is possible to combine it with a sensor provided outside the display unit or the display device. This makes it possible to realize electronic devices with more functions.

[0302] The light receiving element is a layer formed by forming at least one of the layers between a pair of electrodes into a light emitting element (EL element). For example, the photodetector can have a common structure with the active layer. It can also be made to have the same structure as an optical element (EL element). By simply adding the process of forming an active layer, light-emitting elements and light-receiving elements can be formed on the same substrate. In addition, the light receiving element and the light emitting element can be connected to the same pixel electrode and common electrode, respectively. The light receiving element can be electrically connected to the circuit by the same material and process. The light emitting element and the circuit electrically connected to the light emitting element are manufactured using the same material and in the same process. This simplifies the manufacturing process of the display device. A highly convenient display device can be manufactured by incorporating a light-receiving element.

[0303] In the display device of the present embodiment, the distance from the light-shielding layer to the light-receiving element is long, and the light emitted from the light-shielding layer A structure is provided on the surface on which the light-shielding layer is formed so that the distance to the optical element is shortened. , while reducing sensor noise, increasing image resolution and suppressing the viewing angle dependency of the display. Therefore, it is possible to improve both the display quality and the image quality of the display device. It is possible.

[0304] This embodiment mode can be combined with other embodiment modes as appropriate. In the case where multiple configuration examples are shown in one embodiment, the configuration examples may be combined as appropriate. It is possible to do this.

[0305] (Embodiment 2) In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS. 17 and 18. do.

[0306] [Pixel circuit example 1] A display device according to one embodiment of the present invention includes a first pixel circuit having a light-receiving element and a second pixel circuit having a light-emitting element. The first pixel circuit and the second pixel circuit each have a matrix are arranged in a shape.

[0307] FIG. 17A shows an example of a first pixel circuit having a light receiving element, and FIG. 17B shows an example of a second pixel circuit having a light emitting element. 1 shows an example of a second pixel circuit.

[0308] The pixel circuit PIX1 shown in FIG. 17A includes a light receiving element PD, a transistor M1, a transistor M 2, transistor M3, transistor M4, and capacitance element C1. An example is shown in which a photodiode is used as the element PD.

[0309] The cathode of the photodetector PD is electrically connected to the wiring V1, and the anode is connected to the The gate of the transistor M1 is electrically connected to the wiring T X, and the other of the source and drain is one electrode of the capacitance element C1. The source or drain of transistor M2 is electrically connected to the gate of transistor M3. The transistor M2 has a gate electrically connected to the wiring RES and a source or drain The other input is electrically connected to the wiring V2. One of the source and drain is electrically connected to the wiring V3, and the other of the source and drain is The gate of the transistor M4 is electrically connected to the wiring S E, and the other of the source or drain is electrically connected to the wiring OUT1.

[0310] A constant potential is supplied to the wiring V1, wiring V2, and wiring V3. When driving with a reverse bias, a potential lower than the potential of the wiring V1 is supplied to the wiring V2. The transistor M2 is controlled by a signal supplied to the wiring RES. The function to reset the potential of the node connected to the gate of 3 to the potential supplied to wiring V2 The transistor M1 is controlled by a signal supplied to the wiring TX, and the light receiving element PD The potential of the node changes depending on the current flowing through the node. The transistor M3 functions as an amplifying transistor that outputs a signal according to the potential of the node. The transistor M4 is controlled by a signal supplied to the line SE, and the voltage of the node A selection transistor for reading the output according to the position by an external circuit connected to wiring OUT1. It functions as such.

[0311] The pixel circuit PIX2 shown in FIG. 17B includes a light-emitting element EL, a transistor M5, a transistor M Here, the light-emitting element EL includes a light-emitting element EL, a transistor M7, and a capacitor C2. This shows an example using a photodiode. In particular, an organic EL element is used as the light-emitting element EL. It is preferable that

[0312] The transistor M5 has a gate electrically connected to the wiring VG and a source or a drain is electrically connected to the wiring VS, and the other of the source and the drain is connected to one of the electrodes of the capacitance element C2. The source or gate of transistor M6 is electrically connected to the One of the drains is electrically connected to the wiring V4, and the other is connected to the anode of the light-emitting element EL. Electrically connected to either the source or the drain of the transistor M7. The gate is electrically connected to the wiring MS, and the other of the source and drain is connected to the wiring OUT2. The cathode of the light-emitting element EL is electrically connected to the wiring V5.

[0313] A constant potential is supplied to the wiring V4 and the wiring V5. The cathode side can be set to a higher potential than the anode side. is controlled by a signal supplied to the wiring VG, and controls the selection state of the pixel circuit PIX2. The transistor M6 also functions as a select transistor for The transistor functions as a driving transistor that controls the current flowing through the light-emitting element EL in accordance with the potential applied thereto. When the transistor M5 is in a conductive state, the potential supplied to the line VS is applied to the gate of the transistor M6. The luminance of the light emitting element EL can be controlled according to the potential of the gate. The transistor M7 is controlled by a signal supplied to the wiring MS, and the transistor M6 and the light-emitting element It has a function of outputting the potential between the element EL and the element EL to the outside via the wiring OUT2.

[0314] Here, the pixel circuit PIX1 has a transistor M1, a transistor M2, a transistor M3 and transistor M4, and transistor M5 and transistor M6 of pixel circuit PIX2. The transistor M6 and the transistor M7 each have a semiconductor layer in which a channel is formed. It is preferable to use a transistor using a metal oxide (oxide semiconductor).

[0315] A transistor using metal oxides with a wider band gap and lower carrier density than silicon The transistor can realize an extremely small off-state current. The charge stored in the capacitor connected in series with the transistor is discharged over a long period of time by the current. Therefore, it is possible to hold the capacitance by connecting the capacitance element C1 or the capacitance element C2 in series. The connected transistors M1, M2, and M5 are made of oxide semiconductors. It is preferable to use a transistor to which a conductor is applied. Similarly, by using a transistor including an oxide semiconductor, manufacturing costs can be reduced. This can be done.

[0316] In addition, the transistors M1 to M7 have silicon as the semiconductor in which the channel is formed. In particular, transistors using single crystal silicon or polycrystalline silicon can also be used. By using highly crystalline silicon such as This is preferable because it allows for faster operation.

[0317] In addition, an oxide semiconductor is used for at least one of the transistors M1 to M7. In addition to using transistors, it is also possible to use silicon-based transistors. good.

[0318] In addition, in FIGS. 17A and 17B, the transistors are assumed to be n-channel transistors. Although shown, a p-channel transistor can also be used.

[0319] The transistors in the pixel circuit PIX1 and the transistors in the pixel circuit PIX2 are the same. It is preferable that they are formed side by side on one substrate. The transistors of the pixel circuit PIX1 and the transistors of the pixel circuit PIX2 are mixed and periodically arranged in one area. It is preferable to have a configuration in which the electrodes are arranged in a row.

[0320] In addition, a transistor and a capacitor are provided at a position overlapping the light receiving element PD or the light emitting element EL. It is preferable to provide one or more layers having one or both of these. This reduces the effective area occupied by the light receiving section or display section, thereby realizing a high-definition light receiving section or display section.

[0321] [Pixel circuit example 2] A block diagram of a pixel is shown in Figure 18A. The pixel shown in Figure 18A includes a switching transistor (Switching Tr), driving transistor (Driving Tr), light emitting element In addition to the OLED, it also has memory.

[0322] The memory is supplied with data Data_W. In addition to the display data Data, data D When ata_W is supplied to the pixel, the current flowing through the light emitting element increases, and the display device High brightness can be expressed.

[0323] In imaging using a display device according to one embodiment of the present invention, light emitted from a light-emitting element is used as a light source to capture light from an object to be imaged. The light-emitting element used as the light source is detected by the light-receiving element. By driving based on the data Data and the data Data_W, the light emitting element can be illuminated with high brightness. The higher the brightness of the light-emitting element, the more the S / N ratio can be improved. This makes it possible to increase the sensitivity of light detection by the light receiving element.

[0324] FIG. 18B shows a specific circuit diagram of the pixel circuit.

[0325] The pixel shown in FIG. 18B includes a transistor M1, a transistor M2, a transistor M3, and a transistor M4. The pixel includes a transistor M4, a capacitance element Cs, a capacitance element Cw, and a light-emitting element EL.

[0326] One of the source and drain of the transistor M1 is electrically connected to one electrode of the capacitance element Cw. The other electrode of the capacitance element Cw is connected to the source or drain of the transistor M4. One of the source and drain of the transistor M4 is electrically connected to the The gate of the transistor M2 is electrically connected to the gate of the capacitance element C The other electrode of the capacitance element Cs is electrically connected to one electrode of the transistor M2. The source or drain of the transistor M1 is electrically connected to the source or drain of the transistor M2. One of the drains is electrically connected to one of the source or drain of the transistor M3. One of the source and drain of the transistor M3 is connected to one electrode of the light-emitting element EL. Each transistor shown in FIG. 18B has a backplane electrically connected to its gate. However, the connection of the back gate is not limited to this. A back gate may not be provided.

[0327] Here, the other electrode of the capacitance element Cw, one of the source and drain of the transistor M4, The node to which the gate of the transistor M2 and one electrode of the capacitance element Cs are connected is called node NM. The other electrode of the capacitance element Cs, the source or drain of the transistor M2, one of the source and drain of the transistor M3, and one of the light-emitting element EL The node to which the electrode is connected is defined as node NA.

[0328] The gate of the transistor M1 is electrically connected to the wiring G1. The gate of the transistor M4 is electrically connected to the wiring G2. The other of the source and drain of the transistor M1 is electrically connected to the wiring DATA. The other of the source and drain of the transistor M3 is electrically connected to the wiring V0. The other of the source and drain of the transistor M4 is connected to the wiring DATA_W. are electrically connected.

[0329] The other of the source or drain of the transistor M2 is electrically connected to the wiring ANODE (high potential side). The other electrode of the light-emitting element EL is electrically connected to the wiring CATHODE (low potential side). are connected to the network.

[0330] The wiring G1 and the wiring G2 function as signal lines for controlling the operation of the transistors. The wiring DATA functions as a signal line that supplies image signals to the pixels. The wiring DATA_W is a signal line for writing data to the memory circuit MEM. The wiring DATA_W can function as a line. The wiring DATA_W supplies a correction signal to the pixel. The wiring V0 can function as a signal line. It also functions as a monitor line to acquire the voltage from the wiring V0 to the transistor M3. By supplying a specific potential to the other electrode of the capacitance element Cs via It can also stabilize the

[0331] The transistor M2, the transistor M4, and the capacitance element Cw constitute a memory circuit MEM. The node NM is a storage node, and by turning on the transistor M4, the wiring DATA The signal supplied to _W can be written to node NM. By using a transistor with low off-state current, the potential of the node NM can be held for a long time. can.

[0332] The transistor M4 is, for example, a transistor ( Hereinafter, an OS transistor (OS transistor) can be used. The current can be made extremely low, and the potential of the node NM can be maintained for a long time. In this case, it is preferable to use OS transistors for other transistors constituting the pixel. For specific examples of metal oxides, see Embodiment 1.

[0333] OS transistors have a large energy gap and therefore exhibit extremely low off-state current. In addition, OS transistors have the following drawbacks: impact ionization, avalanche breakdown, and short-channel effects. The transistors that have Si in the channel formation region (hereinafter referred to as Si transistors) do not produce any effects. It has different characteristics from the conventional resistors and can form highly reliable circuits.

[0334] In addition, a Si transistor may be used for the transistor M4. It is also preferable to use Si transistors for the other transistors used.

[0335] Si transistors include transistors with amorphous silicon and crystalline silicon. transistors having a silicon (typically low-temperature polysilicon), Examples include transistors.

[0336] Furthermore, one pixel may have both an OS transistor and a Si transistor. .

[0337] In the pixel, the signal written to the node NM is the image signal supplied from the wiring DATA. The transistor M1 is capacitively coupled to the pixel It may have the ability to select

[0338] That is, if a desired correction signal is stored in the node NM, the correction signal is applied to the supplied image signal. The correction signal may be attenuated by elements on the transmission path. Therefore, it is preferable to generate the signal taking this attenuation into consideration.

[0339] By using the image signal and the correction signal to make the light emitting element emit light, the current flowing through the light emitting element is increased. This allows for a higher brightness to be displayed. It can be applied as the gate voltage of the transistor, reducing the power consumption of the source driver. Since high-intensity light can be used as the light source, the sensitivity of the sensor can be increased. This can be done.

[0340] This embodiment mode can be combined with other embodiment modes as appropriate.

[0341] (Embodiment 3) In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS. 19 to 21. do.

[0342] The electronic devices of this embodiment include the display device of one embodiment of the present invention. The display device of one embodiment of the present invention can be applied to the display portion. has a light detection function, so it can perform biometric authentication on the display or This allows the detection of contact or proximity, improving the functionality and convenience of electronic devices. This can improve your skills.

[0343] Examples of electronic devices include television sets, desktop or notebook PCs, etc. Personal computers, computer monitors, digital signage, pachinko machines, etc. In addition to electronic devices with relatively large screens such as large game consoles, digital cameras, Digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals Examples include audio equipment, sound reproduction devices, etc.

[0344] The electronic device of this embodiment includes sensors (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, Distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation (including the ability to measure radiation, flow rate, humidity, gradient, vibration, odor or infrared) It may be possible.

[0345] The electronic device of this embodiment can have various functions. For example, Functions for displaying still images, videos, text images, etc. on the display, touch panel function, calendar - Functions to display date or time, etc., and to run various software (programs) Functions, wireless communication functions, and functions for reading programs or data recorded on recording media etc.

[0346] The electronic device 6500 shown in FIG. 19A is a portable information device that can be used as a smartphone. It is a terminal device.

[0347] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, and a button 65 04, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display unit 6502 has a touch panel function.

[0348] The display device of one embodiment of the present invention can be applied to the display portion 6502.

[0349] FIG. 19B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0350] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501. A display panel 6511, an optical member 6512, a touch panel 6513, and a protective member 6510 are arranged in a space surrounded by the display panel 6511, the optical member 6512, and a touch panel 6513. The sensor panel 6513, printed circuit board 6517, battery 6518, etc. are arranged. .

[0351] The protective member 6510 includes a display panel 6511, an optical member 6512, and a touch sensor panel. The cable 6513 is fixed by an adhesive layer (not shown).

[0352] In the area outside the display portion 6502, a part of the display panel 6511 is folded back. The FPC6515 is connected to the folded part. C6516 is mounted on the FPC6515. connected to a child.

[0353] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, extremely lightweight electronic devices can be realized. Because it is thin, it is possible to install a large-capacity battery 6518 while keeping the thickness of the electronic device small. In addition, a part of the display panel 6511 is folded back and the FPC 6515 is attached to the back of the pixel area. By arranging the connection portion, an electronic device with a narrow frame can be realized.

[0354] An example of a television device is shown in FIG. 20A. The television device 7100 has a housing 7101. The display unit 7000 is built into the housing 7101. This shows a configuration in which the above is supported.

[0355] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0356] The television device 7100 shown in FIG. 20A is operated by an operation switch provided on the housing 7101. Alternatively, it can be performed by a separate remote control device 7111. The television may be provided with a touch sensor, and the television can be operated by touching the display unit 7000 with a finger or the like. The remote control operator 7111 may operate the device 7100. The remote control unit 7111 may have a display unit that displays information output from the The channel and volume can be controlled using the operation keys or touch panel. The image displayed on the display unit 7000 can be manipulated.

[0357] The television device 7100 includes a receiver, a modem, and the like. It is also possible to receive general television broadcasts via wired or wireless connection via a modem. By connecting to a wired communication network, it can be transmitted in one direction (sender to receiver) or two directions. It is also possible to communicate information in two directions (between a sender and a receiver, or between receivers). do.

[0358] FIG. 20B shows an example of a notebook personal computer. The computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 721 3, an external connection port 7214, etc. The display unit 7000 is incorporated in the housing 7211. are.

[0359] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0360] 20C and 20D show an example of digital signage.

[0361] The digital signage 7300 shown in FIG. 20C includes a housing 7301, a display unit 7000, and a screen. It also has an LED lamp, operation keys (power switch, or operation It may have a variety of functions, including a switch, connection terminals, various sensors, a microphone, etc.

[0362] FIG. 20D shows a digital signage 7400 attached to a cylindrical pole 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of a pillar 7401. do.

[0363] 20C and 20D, the display device of one embodiment of the present invention is applied to the display portion 7000. It is possible.

[0364] The larger the display unit 7000, the more information can be displayed at once. The wider the part 7000, the more noticeable it is, and for example, the more effective the advertisement. Cut.

[0365] By applying a touch panel to the display unit 7000, images or videos can be displayed on the display unit 7000. It is also preferable because it not only shows route information but also allows users to operate it intuitively. Or when used to provide information such as traffic information, intuitive operation is required. This can improve usability.

[0366] Also, as shown in FIGS. 20C and 20D, the digital signage 7300 or the digital signage The Ineji 7400 is an information terminal device 7311 such as a smartphone owned by the user or It is preferable that the display unit 7411 can be connected to the information terminal 7411 by wireless communication. The advertisement information displayed on 000 is displayed on the screen of the information terminal 7311 or the information terminal 7411. In addition, the information terminal 7311 or the information terminal 7411 can be operated. By doing so, the display on the display unit 7000 can be switched.

[0367] In addition, the digital signage 7300 or the digital signage 7400 is equipped with an information terminal 7 311 or the screen of the information terminal 7411 is used as a control means (controller) to play games. This allows an unspecified number of users to participate in the game at the same time and have fun. It can be done.

[0368] The electronic device shown in FIGS. 21A to 21F includes a housing 9000, a display unit 9001, a speaker 90 03, operation keys 9005 (including power switch or operation switch), connection terminal 900 6. Sensor 9007 (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, Magnetic, temperature, chemical, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity (including functions to measure degree, tilt, vibration, smell or infrared), microphone 90 08, etc.

[0369] The electronic devices shown in FIGS. 21A to 21F have various functions. Functions for displaying still images, videos, text images, etc. on the display, touch panel function, calendar Functions such as displaying date or time, and processing by various software (programs) functions to control the processing, wireless communication functions, and programs or data recorded on the recording medium. The functions of electronic devices are not limited to these. The electronic device may have multiple display units. In addition, cameras and other devices can be installed in electronic devices to take still images and videos and store them on a recording medium (external or Even if the camera has functions such as saving the captured image to a computer (built into the camera) or displaying the captured image on the display, good.

[0370] The electronic device shown in FIGS. 21A to 21F will be described in detail below.

[0371] FIG. 21A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 is, for example, For example, the portable information terminal 9101 can be used as a smartphone. 9003, a connection terminal 9006, a sensor 9007, etc. may be provided. 101 can display text and image information on its multiple sides. 9 shows an example of displaying an icon 9050. Also, information 9051 shown in a dashed rectangle is displayed. It may also be displayed on another surface of the display unit 9001. An example of the information 9051 is an e-mail. Notifications of incoming emails, SNS, phone calls, etc., the subject of emails and SNS, the sender name, the date and time, The time, remaining battery power, signal strength, etc. are displayed. An icon 9050 or the like may be displayed at the location.

[0372] 21B is a perspective view showing a mobile information terminal 9102. The mobile information terminal 9102 has a display The information display unit 9001 has a function to display information on three or more sides of the information display unit 9001. 053, information 9054 are displayed on different sides. For example, the user , with the mobile information terminal 9102 stored in the breast pocket of the clothes, Users can also check the information 9053 displayed in a position that can be observed from above. The user can check the display without taking the mobile information terminal 9102 out of his pocket, and can, for example, receive a call. You can determine whether or not it is possible.

[0373] 21C is a perspective view showing a wristwatch-type mobile information terminal 9200. The display unit 9001 can be used as a smart watch, for example. The display surface is curved, and the display can be performed along the curved display surface. The portable information terminal 9200 communicates with a wireless headset, for example. The mobile information terminal 9200 also has a connection terminal 90 06 also allows data to be transmitted to and from other information terminals and for charging. The charging operation may be performed by wireless power supply.

[0374] 21D to 21F are perspective views showing a foldable mobile information terminal 9201. 21D shows the mobile information terminal 9201 in an unfolded state, FIG. 21F shows the mobile information terminal 9201 in a folded state, and FIG. 21E is a perspective view showing a state in the middle of changing from one of FIG. 21D and FIG. 21F to the other. The information terminal 9201 is highly portable when folded, and seamlessly expands when unfolded. The display area is large, and the display is easy to view. is supported by three housings 9000 connected by hinges 9055. For example, The display section 9001 can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less.

[0375] This embodiment mode can be combined with other embodiment modes and examples as appropriate. [Example]

[0376] In this example, an evaluation device including the light-shielding layer 219a was fabricated and observed. In this example, the display device 10K (FIG. 6B) and the display device 10K described in the first embodiment will be described. device 10N (FIGS. 9A and 9B), display device 10P (FIG. 10B), and display device 10Q (FIG. 11A)) were fabricated. A display device to which the configuration of the display device 10P was applied was fabricated, and the display was confirmed.

[0377] First, an evaluation device 30N including the light-shielding layer 219a of the display device 10N was fabricated. The evaluation device 30N is provided on a substrate 151 with a light-shielding layer that is shielded from the transistors. The fabrication was completed by forming layers 219a and spacers 219b (FIGS. 7A and 9B).

[0378] A top view photograph of the pixel portion of the evaluation device 30N is shown in FIG. 22. As shown in FIG. The configuration of FIG. 9A was applied to the pixel portion of device 30N.

[0379] The pixel 31 includes a light receiving element 110, a red light emitting element 190R, a green light emitting element 190G, and , and a blue light-emitting element 190B.

[0380] As shown in FIG. 22, the upper surface of the light-shielding layer 219a has a shape that surrounds the four sides of the light-receiving element 110 and The gap 220 in the light-shielding layer 219a is a red light-emitting element. As shown in the region 230, one end of the light-shielding layer 219a is located on the green side. In this embodiment, the red light emitting element 190R protrudes in comparison with the red light emitting element 190G. Assuming that the green light-emitting element 190G is used as the light source for sensing, Therefore, the green light emitting element 190G and the gap 220 are spaced apart from each other. This allows stray light from the green light-emitting element 190G to be directed toward the light-receiving element. It is thought that this will suppress the incidence of light on 110 and reduce the influence of noise during sensing. .

[0381] A spacer 219b is provided between the green light emitting element 190G and the blue light emitting element 190B. was established.

[0382] FIG. 23A shows a cross-sectional photograph of the evaluation device 30N including the light-shielding layer 219a.

[0383] The light-shielding layer 219a was made of a red color filter material. La was approximately 2.2 μm.

[0384] As shown in Figure 23A, the cross-sectional shape of the light-shielding layer 219a is an inverse tapered shape. In this case, if the light-shielding layer 219a surrounds all four sides of the light-receiving element 110, the common electrode 11 5 is cut off by the light-shielding layer 219a, and the common electrode 11 As shown in FIG. 22, the light-shielding layer 219a has a gap 220. It is believed that this can prevent the common electrode 115 from being separated.

[0385] Next, an evaluation device 30P including the light-shielding layer 219a of the display device 10P was fabricated. Explain the results.

[0386] A cross-sectional photograph of the evaluation device 30P including the light-shielding layer 219a is shown in FIG. 23B. FIG. 24 shows the display result of the display device to which the configuration of the display device 10P is applied.

[0387] The light-shielding layer 219a was made of a red color filter material. Lb was approximately 2.1 μm.

[0388] When the light-shielding layer 219a has an inverse tapered shape, the organic film and the common electrode formed on the light-shielding layer 219a The coverage of the electrode 115 etc. may be reduced, and the light-emitting device may not emit light.

[0389] As shown in FIG. 23B, a side wall 219c is provided in contact with the side surface of the inversely tapered light-shielding layer 219a. By doing so, it is possible to improve the coverage of the organic film and the common electrode 115, etc., and This can improve the display quality.

[0390] As shown in FIG. 24, by applying the configuration of the display device 10P, it is possible to obtain a good image with few point defects. The results shown were obtained.

[0391] Next, an evaluation device 30K including the light-shielding layer 219a of the display device 10K was fabricated. Explain the results.

[0392] FIG. 25A shows a cross-sectional photograph of evaluation device 30K including light-shielding layer 219a.

[0393] In the evaluation device 30K, a forward tapered shape was formed so as to fill the opening provided in the partition wall 216. The partition wall 216 is made of polyimide resin to block visible light. A transparent resin layer was formed. A brown resist material was used as the light-shielding layer 219a. A resin layer was formed to block light.

[0394] Next, an evaluation device 30Q including the light-shielding layer 219a of the display device 10Q was fabricated. Explain the results.

[0395] FIG. 25B shows a cross-sectional photograph of evaluation device 30Q including light-shielding layer 219a.

[0396] In the evaluation device 30Q, a forward tapered light-shielding layer 219a was provided on the partition wall 217. The wall 217 and the light-shielding layer 219a are both made of a brown resist material to block visible light. A blocking resin layer was formed.

[0397] As described above, in this example, it was possible to fabricate an evaluation device including the light-shielding layer 219a. came. [Example]

[0398] In this example, a display device having a light receiving element and a light emitting element in a display portion was manufactured. I will explain.

[0399] [Device Structure] FIG. 26 shows the device structure that constitutes the pixels of a display device.

[0400] One pixel of the display device manufactured in this example has Red (R), Green (G), and Blue e(B) Three-color organic EL element OLED and one organic photodiode OPD, for a total of four and circuits for independently driving these four elements (drive circuits 43 and 44). ) and.

[0401] The four elements are provided on a substrate 151. In this embodiment, A display device using a glass substrate and a flexible display device using a resin substrate as the substrate 151 Furthermore, a pixel electrode 1 of the organic photodiode OPD was formed on the substrate 151. 81, and a driving circuit 43 electrically connected to a pixel electrode 191 of the organic EL element OLED. A driving circuit 44 is provided which is electrically connected to the organic photodiode OPD. The structure is such that light incident from the substrate side (common electrode 115 side in FIG. 22) is detected. The OLED element has a top-emission structure that emits light toward the opposing substrate. The pixel electrode 191 and the pixel electrode 192 have the function of reflecting visible light.

[0402] Each of the four elements has a separate hole transport layer, and each color of organic EL element is The light-emitting layer of the organic OLED and the active layer of the organic photodiode OPD are fabricated separately. Specifically, the organic photodiode OPD has a hole transport layer 186 and an active layer 183, The red organic EL element OLED has a hole transport layer 196R and a light emitting layer 193R, and the green organic EL element The organic EL element OLED has a hole transport layer 196G and an emitting layer 193G, and is a blue organic EL element. The organic OLED includes a hole transport layer 196B and an emissive layer 193B.

[0403] The common layers 112, 114a, 114b and the common electrode 115 are common to the four elements. The common layer 112 is formed by using a common mask. It functions as an injection layer and a hole transport layer for the organic photodiode OPD. 114a is an electron transport layer of the organic EL element OLED and the organic photodiode OPD. The common layer 114b functions as an electron injection layer for the organic EL element OLED, and The common electrode 115 functions as an electron transport layer of the photodiode OPD. It has the function of transmitting light and reflecting visible light.

[0404] In this way, the three light-emitting elements of R, G, and B can be made separately, and organic photodiodes By simply changing the configuration to create four types including OPD, the display part of the OLED display The photo sensor can be formed on the entire surface of the display device of this embodiment. Compared to incorporating the sensor as a separate module, this method is advantageous in terms of process, cost, and data. It has excellent design properties and is easy to make compact and flexible.

[0405] The imaging method in the display device of this embodiment will be described with reference to FIG. 1C. The image is captured by the display device using the light emitted by the organic EL element OLED as a light source and reflecting off the object. This is done by detecting the incident light with an organic photodiode OPD.

[0406] As shown in FIG. 1C, when capturing an image of a fingerprint of a finger 52 in contact with a substrate 59 (opposite substrate), The light emitted by the organic EL element OLED is reflected by the finger 52 on the substrate 59, and is reflected by the organic photodiode. The OPD detects the reflected light, and the difference in reflectance between the bumps and grooves of the fingerprint is used to , fingerprints can be captured.

[0407] The fingerprint image can be detected using only monochromatic light and does not need to be color imaged. The display device in question emits light sequentially from R, G, and B organic EL elements, and the reflected light from each element is displayed in a time-division manner. For example, a color image can be captured by placing a color image on the opposing substrate. , the color image can be scanned in color. All that is required is to place an organic photodiode OPD that is sensitive to the entire area. High resolution is achieved because there is no need to arrange individual organic photodiodes (OPDs) for G and B. is advantageous.

[0408] [Display device configuration] In this embodiment, the screen size is 3.07 inches diagonally, and the number of pixels is 360 (H) x 540 (V). The pixel pitch is 120μm×120μm, and the resolution is 212ppi. We fabricated a liquid crystal display device with a built-in gate driver and an external source driver. C was implemented using the COG method. The readout circuit outputs analog voltages sequentially.

[0409] The display device of this embodiment includes a transistor using a crystalline oxide semiconductor for a semiconductor layer. The transistor was used as a switching element. The off-state current of a transistor is very low. In terms of image quality, there is the advantage that imaging using the global shutter method becomes possible. In still images, the number of times the image is rewritten can be reduced, leading to low power consumption (IDS drive) (movement) becomes possible.

[0410] IDS driving is an idling strike that operates at a frame frequency slower than normal. In IDS drive, after the image data writing process is executed, the image data is The image data is written once, and then the next image data is written. By extending the interval between image data writes, the power consumption required for writing image data during that time is reduced. The frame frequency of the IDS drive can be reduced, for example, The frequency can be set to 1 / 100 or more and 1 / 10 or less of the frequency (60Hz or more and 240Hz or less). In still images, the video signal is the same between successive frames. Therefore, the IDS driving mode is This is particularly effective when displaying a still image.

[0411] Normally, image rewriting generates noise for the sensor, lowering the S / N ratio. However, in the case of IDS drive, the image is held while sensing, and the image is written. This allows you to stop the image rewriting operation, so you can perform sensing without being affected by noise caused by image rewriting. This makes it possible to suppress a decrease in the S / N ratio.

[0412] In the display device of this embodiment, one frame is divided into a display period and a sensing period. By using IDS drive during the sensing period, the image is not rewritten and noise during sensing is reduced. In addition, organic light-emitting diode (OLED) is used for fingerprint authentication and image scanning. Since the light emitted from the organic EL element OLED is used as a light source, the brightness of the light emitted from the organic EL element OLED can be kept constant. In this case, too, noise can be reduced by adopting IDS drive, resulting in good performance. Sensing can be performed.

[0413] Here, the higher the brightness of the organic EL element OLED, the more the S / N ratio can be improved. In the display device of the example, a pixel circuit having a memory as shown in FIG. 18B was applied. As a result, the display device of this embodiment can make the organic EL element OLED emit light with high brightness. By selectively increasing the brightness of pixels during sensing, the sensitivity of the sensor can be increased. Specifically, the display device of this embodiment can achieve a maximum brightness of 2000 cd / m2 when displaying a single color of green. / cm 2 It can emit light at a brightness of .

[0414] The cross-sectional structure of the display device manufactured in this example has the same structure as the display device 10K (FIGS. 6B and 7A). was applied.

[0415] [Display results] 27A and 27B show the display results of the display device of this example. 27B shows the display result of a display device using a glass substrate as the substrate 151. 27A and 27B show the display results of a flexible display device using the In a display device having a light receiving element and a light emitting element in a display section, an image can be displayed satisfactorily. Furthermore, as shown in FIG. 27B, a display having a light receiving element and a light emitting element was The flexibility of the display unit can be increased, and images can be displayed well even when the display unit is bent. It was confirmed that this is the case.

[0416] [Imaging optical system] In the display device of this embodiment, the light emitted from the organic EL element OLED is reflected by an object. The organic photodiode OPD detects the light emitted by the organic EL element OLED. The light is reflected inside the device and enters the organic photodiode OPD without passing through the target object. Such stray light becomes noise during imaging and reduces the S / N ratio. In the display device of this embodiment, a light-shielding layer is disposed on both the opposing substrate side and the supporting substrate side, and stray light is prevented from being We sought to mitigate the impact of this.

[0417] First, by providing a light-shielding layer on both the opposing substrate side and the supporting substrate side, the influence of stray light is suppressed. Here, a display device 10D shown in FIG. 4A was used as a configuration without a light-shielding layer. The display device 10A has a configuration in which the light-shielding layer 158 is removed (hereinafter, for the sake of simplicity, this will be referred to as a display device 10D). ) is used, and as a configuration having a light-shielding layer, a light-shielding layer 158 and a light-shielding layer 219a are used. The display device 10P shown in FIG. 0B was used. The light-shielding layer 219a was set to a thickness of 2.0 μm. It was formed like this.

[0418] No subject is placed on the display device 10D or the display device 10P, and one green pixel is used as a light source. The intensity of the organic photodiode OPD detected around the pixel that emits light is Since there is no subject, the light detected by the organic photodiode OPD is The only noise components are stray light and other components. The detected intensity of the OPD was measured. In order to focus on the effect, the detection intensity when the entire surface is not emitting light and the light detection intensity when only one pixel is emitting light were measured. The difference between the output intensity and the measurement result of the display device 10P was calculated. The results were normalized by peak intensity.

[0419] The measurement results for the display device 10D are shown in FIG. 28, and the measurement results for the display device 10P are shown in FIG. 28 and 29, the z-axis represents the detected light intensity, and the x- and y-axes represent the pixel addresses. 28 and 29, the maximum value of the detected intensity is increased by providing the light-shielding layer 219a. In addition, in Figure 28, the area of about 4 × 4 pixels , the detection intensity is high, but in Figure 29, the range of high detection intensity is about 2 × 2 pixels. By providing the light-shielding layer 219a, it is possible to narrow the range of pixels where the detection intensity becomes high. From the above, it was found that providing a light-shielding layer on the support substrate side reduces noise caused by stray light. It was found that the intensity of the noise can be suppressed and the range in which noise due to stray light is detected can be narrowed. From the above, by providing a light-shielding layer on both the opposing substrate side and the supporting substrate side, the shadow of stray light can be reduced. It was found that this could suppress reverberation and improve the S / N ratio.

[0420] In order to capture a clear image of a subject, two organic photodiodes with adjacent pixel addresses must be connected. It is necessary to narrow the area where the imaging ranges of the organic photodiodes and the organic photodiodes overlap. This section explains the relationship between the imaging range of the optical photodiode (OPD) and various parameters.

[0421] FIG. 30 shows the imaging range S of one organic photodiode OPD and the The thickness L, the diameter p of the opening of the light-shielding layer 158, the bottom of the opening of the light-shielding layer 158 (the organic photoresist layer of the substrate 152) The distance l from the surface on the diode OPD side to the organic photodiode OPD, The width s of the organic photodiode OPD is shown in Fig. 30. From Fig. 30, the opening diameter p and length L are It can be seen that this affects the imaging range S of the OPD.

[0422] The imaging range S can be calculated by the following formula (1): In formula (1), n1 is the number of adhesive layers 1. n42 and n2 is the refractive index of the substrate 152. In this case, since a resin substrate is used for the substrate 152, the refractive index of the sealing resin used for the adhesive layer 142 and the refractive index of the substrate The refractive index of the resin substrate used for the plate 152 can be considered to be almost the same. If n2, the following equation (2) is obtained.

[0423]

number

[0424] The result of calculating the imaging range S using the above formula (2) is shown in FIG. 31. In FIG. 31, l=10μ m, s=20μm, n1=n2, p=1μm, 2μm, 5μm, 10μm, 20μ For each case of m, the thickness L of the substrate 152 and the imaging of the organic photodiode OPD Shows the relationship with range S.

[0425] As can be seen from Figure 31, the smaller the aperture diameter p, the narrower the imaging range S of the organic photodiode OPD. In addition, the thinner the thickness L of the substrate 152, the It can be seen that the imaging range S of the OPD becomes narrower. It was found that the imaging range S of the organic photodiode OPD can be controlled by adjusting In addition, from equation (2), increasing the distance l or decreasing the width s also leads to the formation of organic photons. It can be seen that the imaging range S of the optical diode OPD becomes narrower.

[0426] 32 and 33, the thickness L of the substrate 152 and the light shielding layer The results of comparing the image resolution of display devices with and without the IR layer 158 are shown below. A black line with a width of 0.12 mm and a total light reflectance of 10% is placed at a pitch of 0.72 mm and a total light reflectance of 80% is placed at a pitch of 0.72 mm. The subject printed on the reflector was placed on the display device and the image was taken. The dimensions were designed to be m, l = 8 μm, and s = 21 μm.

[0427] 32A and 32B are enlarged views of the captured images. The thinner the film, the clearer the image, and the thicker the film, the blurrier the black lines become. Also, from FIG. 32B, it is possible to image the black line regardless of whether or not the light-shielding layer 158 is present. However, the contrast between the black lines and the background area was higher with the light-shielding layer 158. Therefore, by providing the light-shielding layer 158, the imaging range of the organic photodiode OPD is narrowed, and the surrounding It was found that the detection of background areas on the edges can be suppressed.

[0428] Figure 33 shows the horizontal profile extracted from the imaging results. ,The value of the black board and the white background were obtained by ,imaging a low-reflectivity black board in advance. As can be seen from FIG. 33, the thicker the thickness L of the substrate 152, the It was found that the detection intensity increased, while the detection intensity decreased in the background area between the black lines. This is because the imaging range of the organic photodiode OPD increases as the thickness L of the substrate 152 increases. Therefore, every organic photodiode OPD detects both the black line and the background area. This is because it makes it less likely that differences will arise.

[0429] From the above results, in this example, a display device using a glass substrate as the substrate 151 and a display device using a glass substrate as the substrate The display device using the resin substrate 151 also employs a light-shielding layer 158, and the above p, l, In addition to the value of s, the design and manufacturing was carried out so that L=0.2 mm.

[0430] [Image results] In the display device of this embodiment, light emitted from an organic EL element OLED is used as a light source, and an organic photodiode is used as a light source. In this example, the results of imaging using a diode OPD are shown. Scanning was done.

[0431] First, a finger is placed on the display device using a glass substrate as the substrate 151, and the green organic EL element OL When the ED was illuminated and a fingerprint image was taken, the pattern caused by the unevenness of the fingerprint was clearly captured. From this, it was possible to obtain a high resolution image similar to that of a fingerprint using the display device of this embodiment. Furthermore, as shown in FIG. 34A, the substrate 151 is made of resin. The display part of the flexible display device using the substrate is bent, and a finger is placed on the bent part. The fingerprint was captured by emitting light from the OLED, an organic light-emitting diode (OLED) element. The radius of curvature of the display was 10 Even on curved parts of the display, the pattern caused by the unevenness of fingerprints can be captured clearly. Since sensing can be performed well at the curved part of the display, In the portable information terminal shown in FIGS. 21A and 21B, the user points at the side edge or side of the portable information terminal. Applications such as fingerprint authentication are expected.

[0432] Next, a color image was captured. Figure 34B shows the image printed on paper and the printed surface of the paper. The paper was placed on the display device, facing the display device, and the image was captured. Image correction is performed on the captured image using the previously measured white and black display detection values as reference values. In addition, when the image correction is performed, the detected value of the captured image may be significantly different from the reference value. The values in the areas shown in black were corrected.

[0433] In this example, an organic photodiode OPD having absorption in a wide range of the visible region was used. Therefore, the R, G, and B colors of the organic EL element OLED are lit in sequence in a time-division manner, The photodiode OPD captures the image data of each single color of R, G, and B, and In this example, a color image was obtained by combining the image data. The memory function shown in Figure 18B is used to emit high-intensity light at 1 / 2 Hz. A color image was captured. The imaging conditions were a red display luminance of 750 cd / m 2 ,green The display brightness is 1650cd / m 2 , the brightness of the blue display is 370cd / m 2 , each color, The exposure time was 1.6 msec and the readout time was 250 msec. It was confirmed that a color image could be captured satisfactorily using the display device of this example.

[0434] Next, an image of the coin was taken. Figure 35A is a photograph showing the image being taken. Figure 35B is a photograph showing the image being taken. This is the result of placing a coin on the display device and taking an image.

[0435] The details of the imaging method are the same as for capturing a color image. The brightness is 340 cd / m 2 , the brightness of the green display is 1700cd / m 2 , the brightness of the blue display is 1 50cd / m 2 The exposure time for each color was 1.85 msec. It was confirmed that the coin pattern could be captured well using the display device of this embodiment. [Example]

[0436] In this example, a light receiving element was fabricated and the results of evaluating its characteristics will be described.

[0437] In this example, Device 1 and Comparative Device 2 were fabricated as light-receiving elements. Device 1 The structure is the same as that of the light-emitting element, and the light-emitting layer of the light-emitting element is the active layer of the light-receiving element. The device 1 has a laminated structure that can be fabricated by replacing the above with the above. The comparison device 2 is an organic photodiode (OPD) that is a light-emitting element. The structure is not intended to be standardized, and has a layered structure suitable for image sensors.

[0438] The chemical formulas of the materials used in this example are shown below.

[0439] [ka]

[0440] The element structure of the light receiving element of this example is shown in Table 1. Table 1 is also used to compare Device 1 and Comparative Example. Device 2 will now be described.

[0441] [Table 1]

[0442] [Device 1] As shown in Table 1, in Device 1, a silver (Ag) film with a thickness of about 100 nm was used as the first electrode. ) and palladium (Pd) and copper (Cu) alloy (Ag-Pd-Cu (APC)) film, and A two-layer structure of indium tin oxide (ITSO) film containing silicon oxide with a thickness of approximately 100 nm was used. there was.

[0443] The first buffer layer of device 1 corresponds to the hole injection layer and hole transport layer of the light-emitting element. be.

[0444] First, the layer corresponding to the hole injection layer was formed using 3-[4-(9-phenanthryl)-phenyl]-9 -phenyl-9H-carbazole (abbreviation: PCPPn) and molybdenum oxide in a weight ratio The film was formed by co-evaporation of PCPPn: molybdenum oxide at a ratio of 2:1. The layer corresponding to the injection layer was formed to a thickness of about 15 nm.

[0445] Next, a layer corresponding to a hole transport layer was deposited using PCPPn to a thickness of about 40 nm. I arrived.

[0446] The active layer of Device 1 is made of fullerene (C 70 ) and tetraphenyldibenzoperiflanthene (abbreviation: DBP) and a weight ratio of C 70 :DBP=9:1 The active layer was formed to a thickness of about 60 nm.

[0447] The second buffer layer of the device 1 corresponds to the electron transport layer and electron injection layer of the light-emitting device. be.

[0448] First, a layer corresponding to an electron transport layer was formed using 2-[3'-(dibenzothiophen-4-yl)biphenyl] phenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-I I) thickness is about 10 nm, 2,9-bis(naphthalen-2-yl)-4,7-diphenyl -1,10-phenanthroline (abbreviation: NBPhen) to a thickness of approximately 10 nm The layers were formed by sequential vapor deposition.

[0449] Next, a layer corresponding to the electron injection layer was formed using lithium fluoride (LiF) to a thickness of approximately 1 nm. The film was formed by vapor deposition.

[0450] The second electrode of Device 1 was made of silver (Ag) and magnesium (Mg) in a volume ratio of 10:1. After forming the film by co-evaporation to a thickness of about 9 nm, indium tin oxide (ITO) was formed by sputtering to a thickness of about 40 nm.

[0451] In this way, Device 1 was fabricated.

[0452] [Comparative Device 2] As shown in Table 1, comparative device 2 has a titanium film with a thickness of about 50 nm as the first electrode, A three-layer structure was used, consisting of an aluminum film with a thickness of about 200 nm and a titanium film with a thickness of about 5 nm.

[0453] The first buffer layer of Comparative Device 2 is made of fullerene (C 70 ) with a thickness of about 10n The deposition was carried out so that the thickness became m.

[0454] The active layer of comparative device 2 is the same as that of device 1, and contains fullerene (C 70 ) and DBP The weight ratio is C 70 The active layer was formed by co-evaporation in a ratio of SiO 2 : DBP = 9:1. The thickness was formed to be about 60 nm.

[0455] The second buffer layer of the comparative device 2 is made of molybdenum oxide and has a thickness of about 60 nm. The vapor deposition was carried out so that

[0456] The second electrode of the comparative device 2 was made of ITO by sputtering to a thickness of about 40 nm. It was formed to be.

[0457] In this way, comparative device 2 was fabricated.

[0458] [Current density-voltage characteristics] FIG. 36 shows the results of evaluating the current density-voltage characteristics of Device 1 and Comparative Device 2. In FIG. 36, the vertical axis represents voltage (V) and the horizontal axis represents current density (A / cm 2 )

[0459] The light receiving area of the light receiving element in this example was 2 mm×2 mm.

[0460] The light receiving element of this example is irradiated with light of wavelength λ=550 nm at 12.5 μW / cm 2 and the current density The applied voltage was the same as that usually applied to an EL element. This is the value when the asterisk is positive. In other words, the first electrode side is at a high potential and the second electrode side is at a low potential. It is positive if

[0461] As shown in Figure 36, when the voltage is -2 V or less, the photocurrent of Device 1 and Comparative Device 2 is The values of were comparable, and it was found that good values were obtained. It was found that the dark current was lower than that of Device 2.

[0462] As described above, in this embodiment, a light receiving element having a structure common to that of a light emitting element is used. , and good current density-voltage characteristics were obtained.

[0463] As shown in the previous Example 2, the device 1 of this Example was used in the organic photodiode OPD. In the display device of one embodiment of the present invention manufactured by applying the structure of was confirmed. [Example]

[0464] In this example, a light receiving element was fabricated and the results of evaluating its characteristics will be described.

[0465] In this embodiment, the light receiving elements are Device 3, Device 4, Device 5, and Device 6. Device 1 has a structure that is common to the light-emitting device, and It has a laminated structure that can be fabricated by replacing the optical layer with the active layer of the light receiving element.

[0466] The specific configuration of the device used in this example is shown in Table 2. The structure of the device is the same as that of Device 1 in Example 3, and the fabrication method can be referred to in Example 3. The chemical formulas of the materials used in this example are shown below.

[0467] [Table 2]

[0468] [ka]

[0469] As shown in Table 2, the four devices of this example have the same material used for the first buffer layer. In each device, the first buffer layer has two layers.

[0470] In Device 3, Device 4, and Device 5, the first layer of the first buffer layer is PC PPn and molybdenum oxide were mixed in a weight ratio of PCPPn:molybdenum oxide=2:1. The first layer was formed to a thickness of approximately 15 nm.

[0471] The second layer of the first buffer layer of device 3 is made of PCPPn and has a thickness of about 40 nm. It was evaporated like this.

[0472] The second layer of the first buffer layer of Device 4 was 4-phenyl-4'-(9-phenylfluoromethyl)-2-( ... The thickness is approximately 40 nm. The vapor deposition was carried out so that

[0473] The second layer of the first buffer layer of device 5 is 1,3,5-tri(dibenzothiophene-4 -yl)benzene (abbreviation: DBT3P-II) was used, and the thickness was evaporated to about 40 nm. I arrived.

[0474] The first layer of the first buffer layer of device 6 is N,N-bis(4-biphenyl)-6-phenyl. Nylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf) and A LD-MP001Q (Bunseki Kobo Co., Ltd., material serial number: 1S20180314) and The weight ratio of BBABnf:ALD-MP001Q was 10:1. The first layer was formed to a thickness of approximately 15 nm. Q has electron accepting properties for BBABnf.

[0475] The second layer of the first buffer layer of device 6 is made of BBABnf and has a thickness of about 40 nm. The vapor deposition was carried out so that

[0476] [Current density-voltage characteristics] 37A and 37B show the results of evaluating the current density-voltage characteristics of Devices 3 to 6. In Figures 37A and 37B, the vertical axis represents voltage (V) and the horizontal axis represents current density (μA / cm 2 )

[0477] The light receiving area of the light receiving element in this example was 2 mm×2 mm.

[0478] The light receiving element of this example is irradiated with light of 550 nm wavelength at 12.5 μW / cm 2 Irradiated with current density - The voltage characteristics were measured. The measurement results are shown in Figure 37A. The voltage applied here is usually This is the value when the bias applied to the EL element is positive. In other words, the first electrode side is at a high potential. When the second electrode side is at a lower potential, it is positive.

[0479] In addition, under the condition that the light receiving element of this example is not irradiated with light (0 μW / cm 2 ) but the current density-voltage The pressure characteristics were measured, and the measurement results are shown in Figure 37B.

[0480] As shown in Figures 37A and 37B, by changing the material of the first buffer layer, Although there was a difference in the driving voltage, there was no significant change in the saturation current. The light-emitting efficiency of the photodetector fabricated in the example is hardly affected by the material of the first buffer layer. I found out that...

[0481] [Wavelength dependence of external quantum efficiency] 38A and 38B show the wavelength dependence of the external quantum efficiency of Devices 3 to 6. The results are shown in Figures 38A and 38B. In Figures 38A and 38B, the vertical axis represents the external quantum efficiency (%), and the horizontal axis represents the wavelength. Represents length (nm).

[0482] The photodetector of this embodiment is exposed to light with wavelengths from 375 nm to 750 nm at intervals of 25 nm. 0.5μW / cm 2 The external quantum efficiency was measured at a wavelength of - FIG. 38B shows the results when the voltage is 1V, and FIG. 38B shows the results when the voltage is −4V.

[0483] As shown in Figures 38A and 38B, even if the material of the first buffer layer is changed, the external quantum efficiency is not affected. It was found that there was no significant difference.

[0484] As described above, the results of this example show that good characteristics can be obtained regardless of the material of the first buffer layer. From this, it is possible to obtain a light-receiving element used in a display device of one embodiment of the present invention. The structure can be made common with various light-emitting devices, and good characteristics can be obtained. I found out. [Example]

[0485] In this example, a light receiving element was fabricated and the results of evaluating its characteristics will be described.

[0486] The light receiving element fabricated in this example has a structure common to that of the light emitting element. The light-emitting layer of the semiconductor device has a laminated structure that can be fabricated by replacing the light-emitting layer with the active layer of the light-receiving element.

[0487] The photodetector fabricated in this example has the same structure as Device 1 fabricated in Example 3 (see Table 1). It is completed.

[0488] In the evaluation of this example, light with wavelengths from 375 nm to 750 nm was applied to the light receiving element of this example. Every 25 nm, 12.5 μW / cm 2 The wavelength dependence of the external quantum efficiency was determined. The voltage was set to -4 V. The measurement temperature was set to seven conditions, with 10°C intervals between 20°C and 80°C. The temperature dependence of the external quantum efficiency was calculated.

[0489] Figure 39 shows the wavelength dependence of the light receiving sensitivity of the light receiving element. 39 and 40 show the external quantum efficiency (EQE).

[0490] From the results of this example, it can be seen that in the photodetector of this example, the external quantum The photodiode of this example showed a tendency for the efficiency to increase between 20°C and 80°C. No sudden change in efficiency was observed, and normal operation was confirmed.

[0491] As described above, in this embodiment, the structure of the light-emitting element (organic EL element) is common to that of the light-emitting element. We fabricated a photodetector and confirmed that it can be used over a wide temperature range. [Example]

[0492] In this example, a light receiving element was fabricated and the results of evaluating its characteristics will be described.

[0493] The light receiving element fabricated in this example has a structure common to that of the light emitting element. The light-emitting layer of the semiconductor device has a laminated structure that can be fabricated by replacing the light-emitting layer with the active layer of the light-receiving element.

[0494] The specific configuration of the light receiving element used in this example is shown in Table 3. The fabricated light-receiving elements (see Tables 1 and 2) all receive light from the second electrode side. However, the light-receiving element fabricated in this example receives light from the first electrode side.

[0495] The photodetector fabricated in this example has a first electrode made of indium tin oxide (I The first electrode is a 150 nm thick aluminum (Al) film. This is mainly different from Device 1 (see Table 1) prepared in Example 3. The same materials as those in Device 1 were used for the layer, active layer, and second buffer layer, but the film thickness was the same as that of Device 2. This is different from condition 1.

[0496] [Table 3]

[0497] In the evaluation of this example, light with wavelengths from 375 nm to 900 nm was applied to the light receiving element of this example. , 12.5 μW / cm 2 The wavelength dependence of the external quantum efficiency was determined. From 1000 to 750 nm, every 25 nm. From 750 to 900 nm, every 10 nm. The voltage was varied from -6V to 1V in 0.25V increments.

[0498] Figure 41 shows the wavelength dependence of the light receiving sensitivity of the light receiving element. The vertical axis of Figure 41 is the external quantum efficiency. (EQE) is shown. Figure 42 shows the current density-voltage characteristics of the photodiode.

[0499] In this example, a material for a visible light sensor was used for the active layer. It was confirmed that the device has light sensitivity in the range of 450 nm to 650 nm. It was confirmed that the light receiving element functions normally as a visible light sensor.

[0500] As described above, in this embodiment, the first We fabricated a light-receiving element that receives light from the electrode side, and obtained good characteristics. [Example]

[0501] In this example, a light receiving element was fabricated and the results of evaluating its characteristics will be described.

[0502] The light receiving element fabricated in this example has a structure common to that of the light emitting element. The light-emitting layer of the semiconductor device has a laminated structure that can be fabricated by replacing the light-emitting layer with the active layer of the light-receiving element.

[0503] The specific configuration of the light receiving element used in this example is shown in Table 4. The element receives light from the first electrode side. The structure is the same as that of the light-receiving element fabricated in Example 6 (see Table 3), except for the difference in length.

[0504] [Table 4]

[0505] In this example, a continuous driving test was carried out while irradiating the fabricated light receiving element with light to verify the reliability. The light irradiation conditions in the continuous driving test (hereinafter referred to as stress illuminance) were evaluated. ) are 20klx, 40klx, and 100klx, and the voltage is -4V and the temperature is 25 The temperature was ℃, the operating time was 210 hours, and the light source was a white LED. The evaluation was conducted on 11 items (n=11) for 20klx and 5 items (n=5) for 40klx. ), and 100klx was evaluated using six elements (n=6).

[0506] 43A to 43C show the normalized current value-time characteristics of the light receiving element. Figure 43B shows the results when the stress illuminance is 20klx, and Figure 43C shows the results when the stress illuminance is 40klx. FIG. 43C shows the results when the stress illuminance is 100 klx.

[0507] FIG. 44 shows the relationship between the time until the current value deteriorates by 5% and the stress illuminance.

[0508] Figures 43 and 44 show that an increase in stress illuminance promotes a decrease in current during continuous driving. A tendency for this to occur was confirmed.

[0509] Next, we checked the change in current of the photodetector before and after the continuous drive test. The normalized current value vs. measured illuminance characteristics after the test are shown. The current value before the continuous driving test is set to 1, and The normalized current value was calculated after a continuous driving test was carried out under the condition of an illumination of 40 klx. Five elements (n=5) were evaluated under the same conditions.

[0510] As shown in Figure 45, in the area where the measured illuminance is high, the change in the current value before and after the continuous driving test However, in areas where the measured illuminance is low (especially 1klx or less), the It was confirmed that the change in the current value was small. Even if degradation due to the illuminance occurs, the characteristics in the low measurement illuminance range are the same as those in the high measurement illuminance range. It was found that the characteristics are less likely to change compared to the actual values. Since it has good reliability in the low illumination range, it can be used even when the illumination level is low, such as when capturing a fingerprint image. It was suggested that it can be suitably used in relatively low-energy applications. [Explanation of symbols]

[0511] C1: Capacitor, C2: Capacitor, G1: Wiring, G2: Wiring, L1: Shortest distance, L2: Longest Short distance, L3: thickness, L4: sum, M1: transistor, M2: transistor, M3: transistor M4:Transistor, M5:Transistor, M6:Transistor, M7:Transistor Transistor, OUT1: Wiring, OUT2: Wiring, PD: Photodetector, PIX1: Pixel circuit, P IX2: pixel circuit, V0: wiring, V1: wiring, V2: wiring, V3: wiring, V4: wiring, V 5: Wiring, 10A: Display device, 10B: Display device, 10C: Display device, 10D: Display device , 10E: Display device, 10F: Display device, 10G: Display device, 10H: Display device, 10J :Display device, 10K:Display device, 10L:Display device, 10M:Display device, 10N:Display device device, 10P: display device, 10Q: display device, 21: light emission, 21B: light, 21G: light, 21 R: Light, 22: Light, 23a: Stray light, 23b: Stray light, 23c: Stray light, 23d: Stray light, 30K : Evaluation device, 30N: Evaluation device, 30P: Evaluation device, 30Q: Evaluation Device, 31: pixel, 41: transistor, 42: transistor, 42B: transistor 42G: transistor, 42R: transistor, 43: drive circuit, 44: drive circuit, 50A: display device, 50B: display device, 51: substrate, 52: finger, 53: light receiving element layer, 55: layer having a transistor, 57: layer having a light-emitting element, 59: substrate, 100A : display device, 100B: display device, 100C: display device, 110: light receiving element, 112: Transmission layer, 113: light-emitting layer, 114: common layer, 114a: common layer, 114b: common layer, 115 : common electrode, 116: protective layer, 116a: inorganic insulating layer, 116b: organic insulating layer, 116c : inorganic insulating layer, 142: adhesive layer, 143: space, 146: lens array, 149: lens , 151: Substrate, 152: Substrate, 153: Substrate, 154: Substrate, 155: Adhesive layer, 156 : adhesive layer, 157: insulating layer, 158: light-shielding layer, 159: resin layer, 159p: opening, 160 : air gap, 162: display section, 164: circuit, 165: wiring, 166: conductive layer, 167: conductive layer, 168: conductive layer, 169B: conductive layer, 169G: conductive layer, 169R: conductive layer, 172 : FPC, 173: IC, 181: pixel electrode, 182: buffer layer, 183: active layer, 1 84: buffer layer, 186: hole transport layer, 190: light emitting element, 190B: light emitting element, 19 0G: light emitting element, 190R: light emitting element, 191: pixel electrode, 191B: pixel electrode, 191 G: pixel electrode, 191R: pixel electrode, 192: buffer layer, 193: light-emitting layer, 193B: Light-emitting layer, 193G: light-emitting layer, 193R: light-emitting layer, 194: buffer layer, 196B: hole transport layer 196G: hole transport layer; 196R: hole transport layer; 197: optical adjustment layer; 197B: Optical adjustment layer, 197G: Optical adjustment layer, 201: Transistor, 202: Transistor, 2 03: transistor, 204: connection part, 205: transistor, 206: transistor, 207: transistor, 208: transistor, 209: transistor, 210: transistor resistor, 211: insulating layer, 212: insulating layer, 213: insulating layer, 214: insulating layer, 214a : insulating layer, 214b: insulating layer, 215: insulating layer, 216: partition wall, 217: partition wall, 219a : light-shielding layer, 219b: spacer, 219c: sidewall, 220: gap, 221: conductive layer, 22 2a: conductive layer, 222b: conductive layer, 223: conductive layer, 225: insulating layer, 228: region, 2 31: semiconductor layer, 230: region, 231i: channel formation region, 231n: low resistance region, 242: Connection layer, 6500: Electronic device, 6501: Housing, 6502: Display unit, 6503: Power button, 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera Camera, 6508: Light source, 6510: Protective member, 6511: Display panel, 6512: Optical section Material, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 7000: Display unit, 7100: Television device, 7 101: Housing, 7103: Stand, 7111: Remote control unit, 7200: Notebook PC Personal computer, 7211: Case, 7212: Keyboard, 7213: Pointer 7214: External connection port, 7300: Digital signage, 7301: Housing, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7 401: Pillar, 7411: Information terminal, 9000: Housing, 9001: Display, 9003: Peekaboo, 9005: Operation key, 9006: Connection terminal, 9007: Sensor, 9008: Microphone Crophone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Mobile information terminal, 9102: Mobile information terminal , 9200: Mobile information terminal, 9201: Mobile information terminal

Claims

[Claim 1] a first substrate, a second substrate, a light receiving element, a first light emitting element, a resin layer, and a first light blocking layer; the light receiving element, the first light emitting element, the resin layer, and the first light shielding layer are each located between the first substrate and the second substrate; the light-receiving element has a first pixel electrode on the first substrate, an active layer on the first pixel electrode, and a common electrode on the active layer; the first light-emitting element has a second pixel electrode on the first substrate, a first light-emitting layer on the second pixel electrode, and the common electrode on the first light-emitting layer; the resin layer and the first light-shielding layer are each located between the common electrode and the second substrate; the resin layer has an opening overlapping the light-receiving element, the resin layer has a portion overlapping the first light-emitting element, The display device, wherein the first light-shielding layer has a portion located between the common electrode and the resin layer.

Images