Display device

Abstract

To provide a display device with high definition, and a display device with high display quality.SOLUTION: The display device comprises a substrate, an insulation layer, a plurality of transistors and a plurality of light-emitting diodes. The plurality of light-emitting diodes is provided on the substrate in matrix. Each of the plurality of transistors is electrically connected to at least one of the plurality of light-emitting diodes. The plurality of light-emitting diodes is positioned closer to the substrate than the plurality of transistors. The plurality of light-emitting diodes emits light toward the substrate. Each of the plurality of transistors includes a metal oxide layer and a gate electrode. The metal oxide layer includes a channel formation region. The height of the gate electrode is substantially the same as the height of the upper surface of the insulation layer.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention relates to a display device, a display module, an electronic device, and a manufacturing method thereof. do.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the semiconductor device include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, Input devices (e.g., touch sensors), input / output devices (e.g., touch panels), etc. These driving methods or manufacturing methods can be cited as examples. [Background technology]

[0003] In recent years, micro light emitting diodes (micro LEDs) A display device using a liquid crystal display (LCD) as a display element has been proposed (for example, Patent Document 1). Display devices that use LEDs as display elements have advantages such as high brightness, high contrast, and long life. Research and development is currently underway on this technology as a next-generation display device. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] US Patent Application Publication No. 2014 / 0367705 Summary of the Invention [Problem to be solved by the invention]

[0005] Display devices that use micro LEDs as display elements take an extremely long time to mount LED chips. For example, the pick-and-place method Let's create red (R), green (G), and blue (B) LEDs on different wafers. Therefore, the number of pixels in the display device is large. The larger the number of LEDs to be mounted, the longer the mounting time. The higher the resolution, the more difficult it is to implement the LEDs.

[0006] An object of one embodiment of the present invention is to provide a high-definition display device. An object of one embodiment of the present invention is to provide a display device with high display quality. An object of the present invention is to provide a display device with low power consumption. One object is to provide a high-quality display device.

[0007] One aspect of the present invention is to reduce the manufacturing cost of a display device using a micro LED as a display element. One object of the present invention is to provide a method for manufacturing a display device using a micro LED with high yield. An object of the present invention is to manufacture a display device used for the above.

[0008] Note that the description of these problems does not preclude the existence of other problems. It is not necessary to solve all of these problems. From the description of the section, it is possible to extract other issues. [Means for solving the problem]

[0009] A display device according to one embodiment of the present invention includes a substrate, an insulating layer, a plurality of transistors, and a plurality of light-emitting diodes. The plurality of light emitting diodes are arranged in a matrix on the substrate. Each of the plurality of transistors is electrically connected to at least one of the plurality of light emitting diodes. The plurality of light emitting diodes are located closer to the substrate than the plurality of transistors. The light-emitting diode emits light toward the substrate side. The metal oxide layer has a channel formation region. The gate electrode The height of the upper surface of the insulating layer is approximately the same as the height of the upper surface of the insulating layer.

[0010] Alternatively, a display device of one embodiment of the present invention may include a substrate, an insulating layer, a plurality of transistors, and a plurality of The light emitting diodes are arranged in a matrix on a substrate. Each of the plurality of transistors is electrically connected to at least one of the plurality of light-emitting diodes. The plurality of light-emitting diodes are located closer to the substrate than the plurality of transistors. The light-emitting diodes emit light toward the substrate. The transistors are each made of a gold The semiconductor device includes a metal oxide layer, a gate insulating layer, a gate electrode, a first conductive layer, and a second conductive layer. The metal oxide layer has a channel forming region. The metal oxide layer has a first conductive layer overlapping the first conductive layer. a second region overlapping the second conductive layer; and a third region between the first region and the second region. The first conductive layer and the second conductive layer are spaced apart from each other on the metal oxide layer. The insulating layer is located on the first conductive layer and the second conductive layer. The insulating layer is located on the third region. The gate insulating layer is located inside the opening and has a side surface and a The gate electrode is located inside the opening and overlaps the top surface of the gate insulating layer. The insulating layer and the third region overlap with each other via the insulating layer.

[0011] At least one of the plurality of light emitting diodes is preferably a micro light emitting diode. stomach.

[0012] The plurality of light emitting diodes include a first light emitting diode and a second light emitting diode that emit light of different colors. The light emitting diode may be electrically connected to the first light emitting diode. a first transistor electrically connected to the second light emitting diode; and a second transistor electrically connected to the second light emitting diode. The structure may be such that either or both of the channel length and the channel width are different from each other. good.

[0013] Alternatively, the plurality of light emitting diodes may all emit light of the same color.

[0014] The display device of one embodiment of the present invention preferably further includes a driver circuit. The semiconductor device includes a plurality of circuit transistors. The substrate has a channel forming region, an insulating layer, a plurality of transistors, and a plurality of light emitting diodes. The gates are each located between the substrate and the semiconductor substrate. It is located closer to the substrate than the application transistor.

[0015] The display device according to one embodiment of the present invention preferably further includes a functional layer. and at least one of the plurality of light emitting diodes. At least one of the functional layers emits light toward the substrate side through the functional layer. The functional layer includes a coloring layer and a color conversion layer. It has one or both of the following.

[0016] The display device according to one embodiment of the present invention preferably further includes a touch sensor. The electrode emits light toward the touch sensor through the substrate.

[0017] One aspect of the present invention is a display device having the above-described configuration, flexible printed circuit (hereinafter referred to as FPC) or TCP Modules with connectors such as Tape Carrier Package or COG (Chip On Glass) or COF (Chip On Modules that have integrated circuits (ICs) mounted using the film method, etc. do.

[0018] One aspect of the present invention is a device including the above module, an antenna, a battery, a housing, a camera, and a speaker. , a microphone, and an operation button.

[0019] In one embodiment of the present invention, a plurality of transistors are formed in a matrix over a first substrate, and a second A plurality of light emitting diodes are formed in a matrix on the first substrate or the second substrate. On the substrate, at least one of the plurality of transistors and at least one of the plurality of light emitting diodes are A first conductor is formed to electrically connect to another one of the transistors, and the plurality of transistors are connected to each other through the first conductor. At least one of the plurality of light emitting diodes is electrically connected to at least one of the plurality of resistors. a step of bonding the first substrate and the second substrate together to form a plurality of transistors; In the method for manufacturing a display device, at least one planarization treatment is performed. Preferably, at least one of the diodes is a micro light emitting diode. At least one of the transistors preferably has a metal oxide in the channel forming region. .

[0020] In a method for manufacturing a display device according to one embodiment of the present invention, a first conductor is formed over a first substrate. the first conductor is electrically connected to at least one of the plurality of transistors, and the second A second conductor is formed on the substrate, the second conductor being electrically connected to at least one of the plurality of light emitting diodes. The first substrate and the second substrate are bonded together so that the first conductor and the second conductor are in contact with each other. You can also match them.

[0021] In a method for manufacturing a display device according to one embodiment of the present invention, a coloring layer, a color conversion layer, and a tab are formed over a third substrate. After forming at least one of the touch sensors and bonding the first substrate and the second substrate together, The second substrate is peeled off, and a third substrate is bonded to the surface exposed by peeling off the second substrate. It may be combined.

[0022] Alternatively, in a method for manufacturing a display device according to one embodiment of the present invention, a coloring layer, a color conversion ... and a touch sensor, and the first substrate and the second substrate are bonded together. After the alignment, the second substrate is polished to reduce the thickness of the second substrate. A third substrate may be attached to the surface. [Effects of the Invention]

[0023] According to one embodiment of the present invention, a display device with high resolution can be provided. According to one embodiment of the present invention, a display device with low power consumption can be provided. According to one embodiment of the present invention, a highly reliable display device can be provided.

[0024] According to one embodiment of the present invention, the manufacturing cost of a display device using a micro LED as a display element can be reduced. According to one aspect of the present invention, a display device using micro LEDs as a display element can be manufactured with high yield. Display devices can be manufactured.

[0025] The description of these effects does not preclude the existence of other effects. However, it is not necessary to have all of these effects. , it is possible to extract effects other than these. [Brief explanation of the drawings]

[0026] [Figure 1] FIG. 1 is a cross-sectional view showing an example of a display device. [Figure 2] 2(A) to 2(C) are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 3] FIG. 3 is a cross-sectional view showing an example of a display device. [Figure 4] FIG. 4 is a cross-sectional view showing an example of a display device. [Figure 5] 5(A) and 5(B) are cross-sectional views showing an example of a display device. [Figure 6] 6A and 6B are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 7] FIG. 7 is a cross-sectional view showing an example of a display device. [Figure 8] 8A is a top view illustrating an example of a transistor, and FIGS. 8B and 8C are cross-sectional views illustrating an example of a transistor. [Figure 9] 9A is a top view illustrating an example of a transistor, and FIGS. 9B and 9C are cross-sectional views illustrating an example of a transistor. [Figure 10] FIG. 10 is a circuit diagram showing an example of a pixel of a display device. [Figure 11] 11(A) and 11(B) are diagrams showing an example of an electronic device. [Figure 12] 12(A) and 12(B) are diagrams showing an example of an electronic device. [Figure 13] 13A and 13B are diagrams showing an example of an electronic device. [Figure 14] 14(A) to 14(D) are diagrams showing examples of electronic devices. [Figure 15]15(A) to 15(F) are diagrams showing examples of electronic devices. DETAILED DESCRIPTION OF THE INVENTION

[0027] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiments, and various changes and modifications may be made in the form and details thereof without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be achieved by the following embodiments. It should not be construed as being limited to the contents described.

[0028] In the configuration of the invention described below, the same parts or parts having similar functions are designated by the same reference numerals. The same reference numerals are used in common among different drawings, and the repeated explanations thereof will be omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be added.

[0029] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as in reality for ease of understanding. Therefore, the disclosed invention may not necessarily represent the position, size, range, etc. Furthermore, the present invention is not limited to the position, size, range, etc. disclosed in the drawings.

[0030] The words "film" and "layer" may be used interchangeably depending on the situation. For example, the term "conductive layer" can be used interchangeably with the term "conductive film." Alternatively, for example, the term "insulating film" can be changed to " The term "insulating layer" may be changed to "insulating layer."

[0031] (Embodiment 1) In this embodiment, a display device according to one embodiment of the present invention will be described with reference to FIGS.

[0032] [Display device overview] The display device of this embodiment includes a light-emitting diode as a display element and a transistor for driving the display element. The light-emitting diodes are transparent to visible light. The plurality of transistors are provided in a matrix on a substrate having a plurality of The light emitting diodes are electrically connected to at least one of the light emitting diodes. The light emitting diodes are positioned closer to the substrate than the transistors. emits.

[0033] The display device of this embodiment mode includes a plurality of transistors and a plurality of transistors formed on different substrates. It is formed by bonding a light emitting diode and

[0034] In the manufacturing method of the display device of this embodiment mode, a plurality of light-emitting diodes and a plurality of transistors are This is useful when manufacturing a display device with a large number of pixels or a high-resolution display device. Even so, compared to mounting light-emitting diodes one by one on a circuit board, This can reduce the time required and the manufacturing difficulty.

[0035] The display device of this embodiment mode has a function of displaying an image using light-emitting diodes. Since the diode is a self-emitting element, when using the light-emitting diode as a display element, The device does not require a backlight and does not require a polarizing plate. This allows for a reduction in the power consumption of the device, and also makes it possible to make the display device thinner and lighter. In addition, display devices that use light-emitting diodes as display elements have high contrast and a wide viewing angle. In addition, by using inorganic materials for the light-emitting materials, This can extend the life of the display device and improve its reliability.

[0036] In this embodiment, a micro LED is used as the light emitting diode. In this embodiment, a micro LED having a double heterojunction will be described. However, there is no particular limitation on the light-emitting diode, and for example, a light-emitting diode having a quantum well junction may be used. Micro LEDs, LEDs using nanocolumns, etc. may also be used.

[0037] The area of the light-emitting diode's light-emitting region is 1 mm 2 Preferably less than 10,000 μm 2 Less than 3000 μm is more preferable. 2 Less than 700 μm is more preferable 2 The following is further In this specification, the area of the light-emitting region is preferably 10,000 μm 2 below Light-emitting diodes are sometimes referred to as micro LEDs.

[0038] The transistor included in the display device preferably has a metal oxide in a channel formation region. A transistor using a metal oxide can consume less power. When combined with micro LEDs, it will realize displays with extremely low power consumption. It is possible.

[0039] In particular, in the display device of this embodiment, the height of the upper surface of the gate electrode is approximately equal to the height of the upper surface of the insulating layer. It is preferable to have transistors that are nearly identical. l Planarization processing using methods such as mechanical polishing The upper surface of the gate electrode and the upper surface of the insulating layer are planarized, and the height of the upper surface of the gate electrode and the upper surface of the insulating layer are adjusted. The surface height can be adjusted.

[0040] A transistor with such a configuration can be easily reduced in size. By reducing the size of the The definition can be increased.

[0041] The display device of this embodiment mode can have high definition, so that it can be used in a display device having a relatively small display portion. Such electronic devices can be suitably used in, for example, wristwatch-type and bracelet-type information terminals (wearable devices), head-mounted displays, etc. Which VR (Virtual Reality) devices and glasses-type AR (Augmented Reality) Devices for VR (Real Reality) or MR (Mixed Reality) Examples include wearable devices that can be attached to the head, such as headsets.

[0042] [Display device configuration example 1] 1 shows a cross-sectional view of the display device 100A. FIG. 2 shows a method for manufacturing the display device 100A. A cross-sectional view is shown.

[0043] The display device 100A shown in FIG. 1 includes an LED substrate 150A shown in FIG. 2(A) and a display device 100B shown in FIG. 2(B). The circuit board 150B is bonded to the circuit board 150A (see FIG. 2(C)).

[0044] FIG. 2A shows a cross-sectional view of the LED substrate 150A.

[0045] The LED substrate 150A includes a substrate 101, a light-emitting diode 110a, and a light-emitting diode 110b. , and a protective layer 102.

[0046] The light-emitting diode 110a includes an electrode 112a, a semiconductor layer 113a, a light-emitting layer 114a, a semiconductor The light-emitting diode 110b has an electrode 112b, a semiconductor layer 115a, and an electrode 116a. It includes a conductor layer 113b, a light emitting layer 114b, a semiconductor layer 115b, and an electrode 116b.

[0047] The electrode 112a is electrically connected to the semiconductor layer 113a. The electrode 112b is electrically connected to the semiconductor layer 113b. The electrode 116b is electrically connected to the semiconductor layer 115b. 02 includes a substrate 101, semiconductor layers 113a and 113b, light-emitting layers 114a and 114b, and The protective layer 102 is provided to cover the semiconductor layers 115a and 115b. The electrodes 112a and 112b are covered with the side surfaces of the electrodes 112a and 112b and the side surfaces of the electrodes 116a and 116b. The opening overlaps with the upper surface of the electrode 116a and the upper surfaces of the electrodes 116b. The top surfaces of the electrodes 112a and 112b and the top surfaces of the electrodes 116a and 116b are exposed.

[0048] The light emitting layer 114a is sandwiched between the semiconductor layer 113a and the semiconductor layer 115a. The light-emitting layer 114a is sandwiched between the semiconductor layer 113b and the semiconductor layer 115b. In the semiconductor layers 113a and 113b, electrons and holes combine to emit light. One of the layers 115a and 115b is an n-type semiconductor layer, and the other is a p-type semiconductor layer. be.

[0049] a stacked structure including a semiconductor layer 113a, a light-emitting layer 114a, and a semiconductor layer 115a; The laminated structure including the organic layer 113b, the light-emitting layer 114b, and the semiconductor layer 115b is a red The two stacked structures are different. It is preferable that the laminated structure exhibits light of a color corresponding to the color of the light. Gallium arsenide, gallium aluminum arsenide, aluminum gallium Indium-indium-phosphide compounds, gallium nitride, indium-gallium nitride compounds, For example, zinc-iron compounds can be used.

[0050] The light emitting diode 110a and the light emitting diode 110b are arranged to emit light of different colors. By forming the display device in this manner, the step of forming a color conversion layer becomes unnecessary. The manufacturing cost can be reduced.

[0051] In addition, the two stacked structures may emit light of the same color. The light emitted from b passes through one or both of the color conversion layer and the colored layer and enters the outside of the display device. It should be noted that each color pixel has a light emitting diode that emits light of the same color. This configuration will be described later in a second example of the display device.

[0052] The display device of this embodiment mode may also include a light-emitting diode that emits infrared light. A light emitting diode that emits infrared light can be used, for example, as a light source for an infrared light sensor. do.

[0053] The substrate 101 may be, for example, a sapphire (Al2O3) substrate or a silicon carbide (SiC) substrate. Single crystal substrates such as silicon (Si) substrates and gallium nitride (GaN) substrates can be used. This can be done.

[0054] As shown in FIG. 1, light from the light-emitting diodes 110a and 110b is emitted toward the substrate 101. Therefore, it is preferable that the substrate 101 is transparent to visible light. By reducing the thickness by polishing or the like, the transmittance of the substrate 101 to visible light can be increased. This can be done.

[0055] FIG. 2B shows a cross-sectional view of the circuit board 150B.

[0056] The circuit board 150B includes a substrate 151, an insulating layer 152, a transistor 120a, a transistor 120b, conductive layer 184a, conductive layer 184b, conductive layer 187, conductive layer 189, insulating layer 18 6, insulating layer 188, conductive layer 190a, conductive layer 190b, conductive layer 190c, and conductive layer 1 The circuit board 150B further includes an insulating layer 162, an insulating layer 181, an insulating layer 190d, and an insulating layer 190e. 82, insulating layer 183, and insulating layer 185. Although the plurality of transistors may be regarded as components of a transistor, in this embodiment, This section will be explained without including it in the register components.

[0057] The substrate 151 may be an insulating substrate such as a glass substrate, a quartz substrate, a sapphire substrate, or a ceramic substrate. A single crystal semiconductor substrate or a polycrystalline semiconductor substrate made of silicon or silicon carbide. Conductor substrates, compound semiconductor substrates such as silicon germanium, and semiconductor substrates such as SOI substrates It can be used.

[0058] The substrate 151 preferably blocks visible light (is non-transparent to visible light). The substrate 151 blocks visible light, and the transistors 120a and 120b formed on the substrate 151 However, one aspect of the present invention is to prevent light from entering the insulating film from the outside. Without being limited thereto, the substrate 151 may be transparent to visible light.

[0059] An insulating layer 152 is provided on the substrate 151. The insulating layer 152 prevents water from entering the substrate 151. Impurities such as silicon and hydrogen may diffuse into the transistors 120a and 120b, and metal oxide may be formed. It functions as a barrier layer that prevents oxygen from being released from the insulating layer 165 to the insulating layer 152 side. The edge layer 152 may be, for example, an aluminum oxide film, a hafnium oxide film, or a silicon nitride film. A film in which hydrogen and oxygen are less likely to diffuse than a silicon oxide film, such as the above, can be used.

[0060] The transistors 120a and 120b are made up of a conductive layer 161, an insulating layer 163, an insulating layer 164, a metal The semiconductor device includes an oxide layer 165, a pair of conductive layers 166, an insulating layer 167, a conductive layer 168, and the like.

[0061] The metal oxide layer 165 has a channel forming region. a first region overlapping one of the layers 166 and a second region overlapping the other of the pair of conductive layers 166; , and a third region between the first region and the second region.

[0062] A conductive layer 161 and an insulating layer 162 are provided on the insulating layer 152, and the conductive layer 161 and the insulating layer 162 The insulating layer 163 and the insulating layer 164 are provided over the metal oxide layer 62. The conductive layer 161 functions as a gate electrode and is disposed on the insulating layer 164. The conductive layer 161 is connected to the insulating layer 163 and the insulating layer 164, which function as gate insulating layers. The insulating layer 163 overlaps the metal oxide layer 165 via the edge layer 164. The insulating layer 163 is similar to the insulating layer 152. The insulating layer 164 in contact with the metal oxide layer 165 preferably functions as a barrier layer. For the insulating film, it is preferable to use an oxide insulating film such as a silicon oxide film.

[0063] Here, the height of the upper surface of the conductive layer 161 is approximately the same as the height of the upper surface of the insulating layer 162 . For example, an opening is provided in the insulating layer 162, and then the conductive layer 161 is formed to fill the opening. By performing a planarization process using a CMP method or the like, the height of the upper surface of the conductive layer 161 and the insulating layer 1 62. This allows the heights of the upper surfaces of the transistors 120a and 120b to be aligned. The size of can be reduced.

[0064] A pair of conductive layers 166 are provided on the metal oxide layer 165 at a distance from each other. The metal oxide layer 165 and the pair of conductive layers 166 function as a source and a drain. An insulating layer 181 is provided to cover the insulating layer 66, and an insulating layer 182 is provided on the insulating layer 181. The insulating layer 181 and the insulating layer 182 are provided with openings that reach the metal oxide layer 165. An insulating layer 167 and a conductive layer 168 are embedded inside the opening. The insulating layer 167 overlaps the third region. The conductive layer 168 overlaps the side surface of the insulating layer 181 and the insulating layer 18 via the insulating layer 167. The conductive layer 168 functions as a gate electrode, and the insulating layer 167 functions as a gate insulating layer. The conductive layer 168 overlaps the metal oxide layer 165 with the insulating layer 167 interposed therebetween.

[0065] Here, the height of the upper surface of the conductive layer 168 is approximately the same as the height of the upper surface of the insulating layer 182 . For example, an opening is provided in the insulating layer 182, and the insulating layer 167 and the conductive layer 168 are formed so as to fill the opening. After forming the conductive layer 168, a planarization process is performed to make the height of the upper surface of the conductive layer 168 and the insulating layer 182 This allows the heights of the upper surfaces of the transistors 120a and 120b to be aligned. This can reduce noise.

[0066] Then, an insulating layer 183 is formed on the insulating layer 182, the insulating layer 167, and the conductive layer 168. The insulating layer 181 and the insulating layer 183 are provided in the insulating layer 152. Similarly, the insulating layer 181 preferably functions as a barrier layer. By covering the insulating layer 182, the pair of conductive layers 166 are prevented from being oxidized by oxygen contained in the insulating layer 182. This can suppress the following.

[0067] A plug electrically connected to one of the pair of conductive layers 166 and the conductive layer 187 is formed in the insulating layer 18 1, embedded in openings provided in insulating layer 182, insulating layer 183, and insulating layer 185. The plug is formed by the conductive layer 166 contacting the side surface of the opening and the top surface of one of the pair of conductive layers 166. 84b and a conductive layer 184a embedded inside the conductive layer 184b. In this case, it is preferable that the conductive layer 184b is made of a conductive material in which hydrogen and oxygen are not easily diffused. It is preferable to use

[0068] In FIG. 1, a conductive layer 187 is provided on an insulating layer 185, and an insulating layer 186 is provided on the conductive layer 187. The insulating layer 186 has an opening that reaches the conductive layer 187. A conductive layer 189 is buried inside the opening. A conductive layer 187 and an insulating layer 186 are provided on the edge layer 185, and an insulating layer 186 is provided on the conductive layer 187. 8 may be provided. Here, the height of the upper surface of the conductive layer 187 is For example, an opening is provided in the insulating layer 186, and the opening is After forming the conductive layer 187 so as to fill the gap, a planarization process is performed using a CMP method or the like. In this way, the height of the upper surface of the conductive layer 187 and the height of the upper surface of the insulating layer 186 can be made the same. In B), an opening is provided in the insulating layer 188, which reaches the conductive layer 187. The conductive layer 189 is embedded inside the conductive layer 187 and the conductive layer 190. a or the conductive layer 190c.

[0069] One of the pair of conductive layers 166 of the transistor 120a is a conductive layer 184a and a conductive layer 184b. , and is electrically connected to the conductive layer 190a through the conductive layer 187 and the conductive layer 189.

[0070] Similarly, one of the pair of conductive layers 166 of the transistor 120b is a conductive layer 184a, a conductive layer 184b, the conductive layer 187, and the conductive layer 189 are electrically connected to the conductive layer 190c. It is being done.

[0071] Materials that can be used for various conductive layers that constitute the display device of this embodiment include , aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molyb Metals such as nickel, silver, tantalum, or tungsten, or alloys containing these as the main components In addition, films containing these materials can be used as a single layer or as a laminated structure. For example, a single layer structure of aluminum film containing silicon, aluminum on titanium film, Two-layer structure with aluminum film laminated on tungsten film, two-layer structure with aluminum film laminated on tungsten film, copper- Two-layer structure with copper film laminated on magnesium-aluminum alloy film, and copper film laminated on titanium film Two-layer structure with a copper film on a tungsten film, two-layer structure with a titanium film or titanium nitride film A titanium film or copper film is then laminated on top of the silicon film. a three-layer structure in which a titanium nitride film or a molybdenum nitride film is formed, a molybdenum film or a molybdenum nitride film, and An aluminum film or copper film is laminated on top of the silicon dioxide film, and a molybdenum film or molybdenum nitride film is then laminated on top of that. There are three-layer structures that form an indium oxide film. Also, when copper containing manganese is used, the shape by etching can be This is preferable because it improves the controllability.

[0072] Materials that can be used for the various insulating layers that constitute the display device of this embodiment include Resins such as acrylic, polyimide, epoxy, and silicone, silicon oxide, silicon oxynitride Examples of inorganic insulating materials include silicon, silicon nitride oxide, silicon nitride, and aluminum oxide. can be done.

[0073] The circuit board 150B has a reflective layer that reflects light from the light emitting diodes and a light blocking layer that blocks the light. It may have one or both layers.

[0074] As shown in FIG. 1, the electrodes 112a, 112b, and 116a provided on the LED substrate 150A , 116b are conductive layers 190a, 190b, 190c provided on the circuit board 150B, respectively. 90c and 190d are electrically connected.

[0075] For example, the electrode 116a and the conductive layer 190a are electrically connected via the conductor 117a. This electrically connects the transistor 120a and the light-emitting diode 110a. The electrode 116a functions as a pixel electrode for the light-emitting diode 110a. .

[0076] The electrode 112a and the conductive layer 190b are electrically connected via a conductor 117b. The electrode 112a functions as a common electrode for the light-emitting diode 110a.

[0077] Similarly, the electrode 116b and the conductive layer 190c are electrically connected via a conductor 117c. This electrically connects the transistor 120b and the light-emitting diode 110b. The electrode 116b functions as a pixel electrode for the light-emitting diode 110b. .

[0078] The electrode 112b and the conductive layer 190d are electrically connected via a conductor 117d. The electrode 112b functions as a common electrode for the light-emitting diode 110b.

[0079] The conductors 117a to 117d are made of, for example, conductive paste such as silver, carbon, or copper, or gold. In addition, bumps such as solder can be suitably used. The electrodes 112a, 112b, 116a, 116b and the conductive layers 190a to 190b are connected to each other. The conductive materials for the conductive members 117a to 117d are each made of a conductive material having low contact resistance with the conductive members 117a to 117d. For example, when silver paste is used for the conductors 117a to 117d, The conductive materials connected to these are aluminum, titanium, copper, silver (Ag) and palladium (Pd ) and copper (Cu) alloy (Ag-Pd-Cu (APC)), the contact resistance is Low and preferable.

[0080] In FIG. 2(C), the conductors 117a to 117d are provided on the circuit board 150B side, and the LED board 1 1 shows an example in which the conductive members 117a to 117b are bonded to a circuit board 150B. d is provided on the LED substrate 150A side, and the LED substrate 150A and the circuit substrate 150B are bonded together. It may be possible.

[0081] It should be noted that a plurality of light-emitting diodes may be electrically connected to one transistor.

[0082] Next, FIG. 3 shows a cross-sectional view of the display device 100B.

[0083] In the display device 100B, the channel lengths of the transistors 120a and 120b are The other configurations are the same as the display device 100A.

[0084] A transistor 120a that drives the light-emitting diode 110a and a light-emitting diode 110b are connected to the transistor 120a. The driving transistor 120b is a transistor having a size, a channel length, a channel width, and a , and structure, etc. may be different from each other. For example, a light emitting diode In the case where the light emitting diodes 110a and 110b emit light of different colors, Specifically, the transistor configuration may be changed to achieve the desired luminance. Depending on the amount of current required, the channel length and / or width of the transistors for each color may be adjusted. may be changed.

[0085] Next, FIG. 4 shows a cross-sectional view of the display device 100C.

[0086] The display device 100C includes a transistor (transistor) having a channel forming region on a substrate 131. transistors 130a and 130b) and transistors having a channel forming region in a metal oxide (transistors The semiconductor device has a stack of transistors 120a and 120b.

[0087] The substrate 131 is preferably a single crystal silicon substrate. b has a conductive layer 135, an insulating layer 134, an insulating layer 136, and a pair of low resistance regions 133. The conductive layer 135 functions as a gate. The insulating layer 134 is a layer that separates the conductive layer 135 from the substrate 131. The insulating layer 136 is located between the conductive layer 135 and functions as a gate insulating layer. The pair of low resistance regions 133 are formed on the substrate 131 and function as side walls. One of the doped regions acts as the source of the transistor. , the other functions as the drain of the transistor.

[0088] In addition, an element isolation layer is formed between two adjacent transistors so as to be embedded in the substrate 131. A layer 132 is provided.

[0089] An insulating layer 139 is provided over the transistors 130a and 130b, and conductive layers are formed on the insulating layer 139. The conductive layer 138 is provided through the conductive layer 137 embedded in the opening of the insulating layer 139. The conductive layer 138 is electrically connected to one of the pair of low resistance regions 133. An insulating layer 141 is provided over the insulating layer 38, and a conductive layer 142 is provided on the insulating layer 141. The conductive layer 138 and the conductive layer 142 each function as a wiring. An insulating layer 143 and an insulating layer 152 are provided over the transistor 12. The laminated structure from the insulating layer 152 to the substrate 101 is Since it is similar to the device 100A, detailed description will be omitted.

[0090] The transistors 120a and 120b are used as transistors that constitute a pixel circuit. The transistors 130a and 130b are transistors that form the pixel circuit. and a driver circuit (one of a gate driver and a source driver) for driving the pixel circuit. The transistor 12 can be used as a transistor constituting a semiconductor device. 0a, 120b, 130a, and 130b constitute various circuits such as arithmetic circuits and memory circuits. It can be used as a transistor.

[0091] By using this configuration, not only the pixel circuit but also the driver circuit etc. can be placed directly under the light-emitting diode. Therefore, the display device can be formed more easily than when a driving circuit is provided outside the display unit. It is possible to reduce the size of the display. In addition, it is possible to realize a display device with a narrow frame (a narrow non-display area). can be done.

[0092] [Display device configuration example 2] FIG. 5(A) shows a cross-sectional view of the display device 100D, and FIG. 5(B) shows a cross-sectional view of the display device 100E. A plan view is shown.

[0093] In the display device 100D and the display device 100E, the pixels of each color emit light of the same color. It has a diode.

[0094] The display device 100D and the display device 100E are provided with a colored layer CFR and a color conversion layer CCMR. The substrate 191 is made of a metal.

[0095] Specifically, the substrate 191 has a region overlapping with the light-emitting diode 110a of the red pixel. The color conversion layer CCMR converts blue light into red light. It has the function of converting into light.

[0096] In FIG. 5(A) and FIG. 5(B), the light emitted from the light emitting diode 110a of the red pixel is The color conversion layer CCMR converts blue to red, and the coloring layer CFR maintains the purity of the red light. is enhanced and emitted to the outside of the display device 100D or the display device 100E.

[0097] Similarly, although not shown, the substrate 191 has a region overlapping with the light emitting diode of the green pixel. The green colored layer and the color conversion layer that converts blue light into green are included in the green colored layer. The light emitted by the light-emitting diodes in the color pixels is converted from blue to green by the color conversion layer. The purity of the green light is increased by the colored layer, and the green light is emitted to the outside of the display device.

[0098] On the other hand, the substrate 191 has a color-changing layer in the area overlapping with the light-emitting diode 110b of the blue pixel. The substrate 191 does not have a layer. The area overlapping the light-emitting diode 110b of the blue pixel is A blue colored layer may be provided in the region. By providing a blue colored layer, the purity of blue light can be increased. When the blue colored layer is not provided, the manufacturing process can be simplified.

[0099] The blue light emitted by the light-emitting diode 110b travels through the adhesive layer 192 and the substrate 191 to the surface. The light is emitted to the outside of the display device 100D or the display device 100E.

[0100] In the manufacture of a display device with light-emitting diodes of the same configuration in each color pixel, one type of Since only light-emitting diodes need to be produced, it is easier than producing multiple types of light-emitting diodes. As a result, the manufacturing equipment and process can be simplified.

[0101] The substrate 191 is located on the side where light from the light emitting diode is extracted, and therefore is transparent to visible light. It is preferable to use a material with high permeability. Materials that can be used for the substrate 191 include Examples of materials include glass, quartz, sapphire, and resin. A film such as a film may be used. This allows the display device to be made lighter and thinner. do.

[0102] The color conversion layer uses phosphors or quantum dots (QDs). In particular, quantum dots have a narrow peak width in the emission spectrum and emit light with good color purity. This makes it possible to improve the display quality of the display device.

[0103] The color conversion layer can be formed by a droplet ejection method (for example, an inkjet method), a coating method, an imprint method, or various methods. It can be formed by using a printing method (screen printing, offset printing, etc.). A color conversion film such as a dot film may also be used.

[0104] The material for forming the quantum dots is not particularly limited, and may be, for example, a group 14 element, a group 15 element, or the like. Elements, Group 16 elements, compounds consisting of multiple Group 14 elements, and elements belonging to Groups 4 to 14 Compounds of Group 16 elements and Group 2 elements, compounds of Group 16 elements and Group 13 elements Compounds with Group 15 elements, compounds with Group 13 elements and Group 17 elements, compounds with Group 14 elements and Group 1 Compounds with Group 5 elements, compounds with Group 11 and Group 17 elements, iron oxides, titanium oxides , chalcogenide spinels, and various semiconductor clusters.

[0105] Specifically, cadmium selenide, cadmium sulfide, cadmium telluride, zinc selenide , zinc oxide, zinc sulfide, zinc telluride, mercury sulfide, mercury selenide, mercury telluride, arsenide Indium, indium phosphide, gallium arsenide, gallium phosphide, indium nitride, gallium nitride Sodium, indium antimonide, gallium antimonide, aluminum phosphide, aluminum arsenide Aluminum, aluminum antimonide, lead selenide, lead telluride, lead sulfide, lead selenide Indium, indium telluride, indium sulfide, gallium selenide, arsenic sulfide, selenium arsenic telluride, arsenic sulfide, antimony selenide, antimony telluride, sulfur Bismuth oxide, bismuth selenide, bismuth telluride, silicon, silicon carbide, germanium , tin, selenium, tellurium, boron, carbon, phosphorus, boron nitride, boron phosphide, boron arsenide, Aluminum nitride, aluminum sulfide, barium sulfide, barium selenide, barium telluride Calcium, calcium sulfide, calcium selenide, calcium telluride, beryllium sulfide, Beryllium telluride, beryllium sulfide, magnesium selenide, sulfur Germanium oxide, germanium selenide, germanium telluride, tin sulfide, tin selenide, Tin telluride, lead oxide, copper fluoride, copper chloride, copper bromide, copper iodide, copper oxide, copper selenide, oxide Nickel, cobalt oxide, cobalt sulfide, iron oxide, iron sulfide, manganese oxide, molybdenum sulfide Vanadium oxide, tungsten oxide, tantalum oxide, titanium oxide, zirconium oxide , silicon nitride, germanium nitride, aluminum oxide, barium titanate, selenium and zinc and cadmium compounds, indium, arsenic and phosphorus compounds, cadmium, selenium and sulfur compounds Compounds, compounds of cadmium, selenium and tellurium, compounds of indium, gallium and arsenic, Compounds of indium, gallium and selenium, compounds of indium, selenium and sulfur, compounds of copper and indium Examples include compounds of sodium and sulfur, and combinations thereof. So-called alloy quantum dots expressed in a ratio may also be used.

[0106] Quantum dot structures include core type, core-shell type, and core-multishell type. In addition, quantum dots have a high proportion of surface atoms, which makes them highly reactive and prone to aggregation. Therefore, a protective agent or a protective group is attached to the surface of the quantum dots. It is preferable that the protecting agent is attached or the protecting group is provided. This prevents aggregation and increases solubility in solvents. It is also possible to improve electrical stability.

[0107] As quantum dots become smaller, their band gaps become larger, so they can emit light at the desired wavelength. The size of the crystal is adjusted accordingly to obtain the light. , quantum dots emit light that is shifted to the blue side, i.e., to higher energy side, so quantum dots By changing the size of the The emission wavelength can be adjusted over a wide range. For example, it is 0.5 nm or more and 20 nm or less, preferably 1 nm or more and 10 nm or less. The narrower the dot size distribution, the narrower the emission spectrum, resulting in emission with good color purity. The shape of the quantum dot is not particularly limited, and may be spherical, rod-shaped, or disk-shaped. Quantum rods, which are rod-shaped quantum dots, have directionality. It has the function of emitting light.

[0108] The colored layer is a colored layer that transmits light in a specific wavelength range, for example, red, green, blue, or yellow. A color filter that transmits light in the wavelength range of the color can be used. Materials that can be used include metal materials, resin materials, and resin materials containing pigments or dyes. Examples include:

[0109] The display device 100D is manufactured by first bonding a circuit board and an LED board together, as in the display device 100A. Then, the substrate 101 of the LED substrate is peeled off, and an adhesive layer is applied to the surface exposed by the peeling. 192, a substrate 191 provided with a colored layer CFR and a color conversion layer CCMR is attached. It can be made by combining them.

[0110] There is no limitation on the method of peeling off the substrate 101. For example, as shown in FIG. 6(A), A method of irradiating the entire surface of the substrate 101 with a laser beam is exemplified. The substrate 101 is peeled off to expose the protective layer 102 and the light-emitting diodes 110a and 110b. This can be done (Figure 6(B)).

[0111] The laser may be an excimer laser, a solid-state laser, or the like. A diode pumped solid state laser (DPSS) may also be used.

[0112] A release layer may be provided between the substrate 101 and the light emitting diodes 110a and 110b.

[0113] The release layer can be formed using an organic material or an inorganic material.

[0114] Examples of organic materials that can be used for the release layer include polyimide resin and acrylic resin. , epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclohexane Examples of the resin include hydroxylase resins and phenolic resins.

[0115] Inorganic materials that can be used for the release layer include tungsten, molybdenum, titanium, and titanium. Niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium, A metal containing an element selected from radium, osmium, iridium, and silicon, The crystal structure of the silicon-containing layer is The material may be amorphous, microcrystalline, or polycrystalline.

[0116] The adhesive layer 192 may be a photo-curable adhesive such as an ultraviolet curable adhesive, a reaction-curable adhesive, or a thermosetting adhesive. Various curing adhesives such as adhesives and anaerobic adhesives can be used. It's fine.

[0117] As shown in the display device 100E, the colored layer C is attached to the substrate 101 using an adhesive layer 192. A substrate 191 on which the FR and the color conversion layer CCMR are provided may be attached. The substrate 101 does not need to be peeled off.

[0118] At this time, it is preferable to thin the thickness of the substrate 101 by polishing or the like. The light extraction efficiency of the light emitting diode can be improved. It is also possible to reduce the size and weight.

[0119] The display device 100E is manufactured by first bonding a circuit board and an LED board together, as in the display device 100A. Then, the substrate 101 of the LED substrate is polished, and the polished surface of the substrate 101 is bonded to the substrate. A substrate 191 provided with a colored layer CFR and a color conversion layer CCMR is attached using a layer 192. It can be made by combining

[0120] [Display device configuration example 3] FIG. 7 shows a cross-sectional view of the display device 100F.

[0121] A display device of one embodiment of the present invention is a display device (an input / output device or a touch sensor) equipped with a touch sensor. The configuration of each of the above-described display devices may be applied to a touch panel. The display device 100F is an example in which a touch sensor is mounted on the display device 100A. is.

[0122] There is no limitation on the detection elements (also referred to as sensor elements) included in the touch panel of one embodiment of the present invention. We offer a variety of sensors that can detect the proximity or contact of a finger, stylus, or other object. , can be applied as a sensing element.

[0123] The sensor type may be, for example, a capacitance type, a resistive film type, a surface acoustic wave type, or an infrared type. Various methods can be used, such as a pressure-sensitive method, an optical method, or the like.

[0124] In this embodiment, a touch panel having a capacitance type detection element will be described as an example. .

[0125] The capacitance type includes a surface capacitance type, a projected capacitance type, etc. The capacitance type includes the self-capacitance type and the mutual capacitance type. This is preferable because it enables simultaneous multi-point detection.

[0126] The touch panel of one embodiment of the present invention is formed by bonding a display device and a sensing element that are separately manufactured. a substrate supporting the display element and / or an opposing substrate, Various configurations can be applied, such as a configuration in which a pole or the like is provided.

[0127] In the display device 100F, the laminated structure from the substrate 151 to the substrate 101 is the same as that of the display device 10 Since it is the same as 0A, detailed explanation will be omitted.

[0128] The conductive layer 187b is connected to the FP via the conductive layer 189b, the conductive layer 190e, and the conductor 195. The display device 100F is electrically connected to the FPC1. Power is supplied.

[0129] The conductive layer 187b can be formed using the same material and process as the conductive layer 187a. The conductive layer 189b can be formed using the same material and in the same process as the conductive layer 189a. The conductive layer 190e is formed using the same material and in the same process as the conductive layers 190a to 190d. It is possible.

[0130] The conductor 195 may be, for example, an anisotropic conductive film (ACF). Conductive Film), or Anisotropic Conductive Paste (ACP) tropic conductive paste) can be used.

[0131] A touch sensor is provided on the substrate 171. The substrate 171 and the substrate 101 are bonded together by an adhesive layer 179, with the surface facing the substrate 101. They are combined.

[0132] An electrode 177 and an electrode 178 are provided on the substrate 101 side of the substrate 171. The electrodes 177 and 178 are formed on the same plane. The insulating layer 173 is made of a light-transmitting material and is provided to cover the electrodes 177 and 178. The electrode 174 is sandwiched between the electrode 177 via an opening provided in the insulating layer 173. The electrode 178 is electrically connected to two electrodes 178 that are provided so as to surround the electrode 178 .

[0133] The wiring 172 obtained by processing the same conductive layer as the electrodes 177 and 178 is the same as the electrode 174. The conductive layer 175 is connected to the conductive layer 175 obtained by processing the conductive layer 17. 6 and is electrically connected to FPC2.

[0134] [Transistor configuration example] The transistor that can be used in the display device of one embodiment of the present invention is the transistor shown in FIG. The present invention is not limited to the configuration of the registers 120a and 120b. A structural example of a transistor that can be used in a display device of one embodiment of the present invention will be described.

[0135] FIG. 8A shows a top view of the transistor 300. Note that in FIG. 8A, for clarity, 8(B), the dashed dotted line A1- in FIG. 8B is a cross-sectional view of the transistor 300 taken along the channel length direction. FIG. 8C shows a cross-sectional view taken along the dashed line A3-A4 in FIG. 8A. 1C is a cross-sectional view of the transistor 300 in the channel width direction.

[0136] 9A shows a top view of the transistor 300A. Note that in FIG. 9A, the Therefore, some elements are omitted from the illustration. 9B is a cross-sectional view of the transistor 300A taken along the line -A2. 9(C) shows a cross-sectional view taken along the dashed line A3-A4 in FIG. 9(A). FIG. 9C can be considered a cross-sectional view of the transistor 300A in the channel width direction.

[0137] The transistor 300A shown in FIG. 9 is a modified example of the transistor 300 shown in FIG. The oxide layer 330c, the insulating layer 354, and the insulating layer 380 each have a single-layer structure in FIG. 9, which are laminated structures. The other configurations are the same in FIGS. 8 and 9.

[0138] In this specification, a transistor includes a gate, a drain, and a source. It is an element with at least three terminals. And, the drain (drain terminal, drain region, or drain electrode) and the source (source terminal, source region, or source electrode) A region where a channel is formed (hereinafter also referred to as a channel forming region) is provided between the gate electrodes. A current can flow between the source and drain through the channel forming region. In this specification, the channel formation region refers to a region through which current mainly flows. .

[0139] The source and drain functions may differ depending on the type of transistor used, or the circuit operation. This may be reversed if the direction of the current changes during operation. In some documents, the terms source and drain may be used interchangeably. .

[0140] Note that the channel length is, for example, the length of a semiconductor (or transistor) in a top view of a transistor. When the transistor is in the on state, the gate electrode overlaps with the semiconductor (the part where current flows). The source (source region or source electrode) and drain This refers to the distance between the drain (drain region or drain electrode) of one transistor. In a stator, the channel length does not necessarily have the same value in all regions. The channel length of a transistor may not be determined to a single value. The channel length is any one value, maximum value, minimum value or The average value is used.

[0141] The channel width is, for example, the width of the semiconductor (or transistor) in a top view of the transistor. The area where the gate electrode overlaps with the semiconductor (the part of the semiconductor where current flows when the semiconductor is on). , or the channel shape in the vertical direction based on the channel length direction in the channel formation region The length of the region where the channel width is the same as that ... In other words, the channel width of a transistor does not necessarily have the same value. Therefore, in this specification, the channel width is defined as the width in the channel forming region. The value to be used is either one of the values, the maximum value, the minimum value or the average value.

[0142] In this specification and the like, depending on the structure of the transistor, the channel may not actually be formed. The channel width in the region where the transistor is located (hereinafter also referred to as the "effective channel width") is The channel width shown in a top view of the capacitor (hereinafter also referred to as the "apparent channel width") For example, if the gate electrode covers the side of the semiconductor, the effective channel In some cases, the channel width becomes larger than the apparent channel width, and the effect of this becomes unnegligible. For example, in a miniaturized transistor in which the gate electrode covers the side of the semiconductor, In this case, the ratio of the channel formation region formed on the surface may become larger. The effective channel width is larger than the channel width of the semiconductor device.

[0143] In such a case, it may be difficult to estimate the effective channel width through actual measurements. For example, to estimate the effective channel width from the design value, the shape of the semiconductor must be known. Therefore, if the shape of the semiconductor is not known exactly, it is difficult to estimate the effective chip size. Channel width is difficult to measure accurately.

[0144] In this specification, when simply referring to the channel width, it may refer to the apparent channel width. In this specification, when simply referring to the channel width, it means the effective channel width. It may refer to the channel length, channel width, effective channel width, apparent channel The channel width and other parameters can be determined by analyzing cross-sectional TEM images. Cut.

[0145] The transistor 300 is disposed on a substrate (not shown) via an insulating layer 314. A conductive layer 305 is disposed so as to be embedded in the insulating layer 316, and the conductive layer 30 5, an insulating layer 322 disposed on the insulating layer 322, and an insulating layer An oxide layer 330 (oxide layer 330a, oxide layer 330b, and oxide layer 330c) disposed on 324 a dielectric layer 330c) disposed on the oxide layer 330; an insulating layer 350 disposed on the insulating layer 350; The conductive layer 360 (conductive layer 360a and conductive layer 360b) and the oxide layer 330b are The conductive layer 342a and the conductive layer 342b contacting a part of the upper surface of the insulating layer 324, the side surface of the oxide layer 330a, the side surface of the oxide layer 330b, the side surface and top surface of the conductive layer 342a, and and an insulating layer 354 disposed in contact with the side and top surfaces of the conductive layer 342b.

[0146] An insulating layer 380 and an insulating layer 370 are formed on the transistor 300, and function as interlayer films. 4 and an insulating layer 381 are provided. The transistor 300 also has a The conductive layer 340 (conductive layer 340a and conductive layer 340b) is electrically connected to the conductive layer 340. An insulating layer 341 (insulating layer 341a and insulating layer 341b) is provided in contact with the side surface of the conductive layer 340. can be.

[0147] The oxide layer 330 includes an oxide layer 330a disposed on the insulating layer 324 and an oxide layer 330b. an oxide layer 330b disposed thereon; and a silicon dioxide film disposed on the oxide layer 330b, at least a portion of which is and an oxide layer 330c in contact with the upper surface of the oxide layer 330b. By having the oxide layer 330a below the layer 330b, the oxide layer 330a is formed below the oxide layer 330a. This can prevent impurities from diffusing from the structure into the oxide layer 330b. By having the oxide layer 330c on the oxide layer 330b, the oxide layer 330c is This can prevent impurities from diffusing from the formed structure into the oxide layer 330b.

[0148] In the transistor 300, the oxide layer 330 is divided into an oxide layer 330a, an oxide layer 330b, and an oxide layer 330c. 3, the oxide layer 330c is a three-layer structure, but the present invention is not limited to this. The oxide layer 330 may be, for example, a single layer of oxide layer 330b, or a layer of oxide layer 330a. and oxide layer 330b, a two-layer structure of oxide layer 330b and oxide layer 330c, or The oxide layer 330a, the oxide layer 330b, and the oxide layer 330c may have a laminated structure of four or more layers. Each of the oxide layers 330c may have a stacked structure.

[0149] A conductive layer 342 (conductive layer 342a and conductive layer 342b) is provided on the oxide layer 330b. The thickness of the conductive layer 342 is, for example, 1 nm or more and 50 nm or less, and preferably 2 nm or more. It can be made 25 nm or less.

[0150] The conductive layer 360 serves as a first gate (also referred to as a top gate) electrode of the transistor 300. The conductive layer 342a and the conductive layer 342b function as the source and drain electrodes of the transistor 300, respectively. It functions as a source electrode or a drain electrode.

[0151] The transistor 300 has an oxide layer 330 having a channel formation region, which functions as a semiconductor. It is preferable to use a metal oxide (hereinafter also referred to as an oxide semiconductor) that has a high conductivity. By using the material in the channel formation region of a transistor, a transistor with high field effect mobility can be produced. Furthermore, a highly reliable transistor can be realized.

[0152] The metal oxide has a band gap of 2.0 eV or more, preferably 2.5 eV or more. It is preferable to use a metal oxide having a large band gap for the oxide layer 330. By using such a transistor, the off-state current of the transistor can be reduced. By using the capacitor, a display device with low power consumption can be provided.

[0153] For example, the oxide layer 330 may be formed of a material containing indium (In), an element M, and zinc (Zn). In-M-Zn oxide (element M is aluminum, gallium, yttrium, tin, copper, Vanadium, beryllium, boron, titanium, iron, nickel, germanium, zirconium , molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, It is preferable to use a metal oxide such as one or more selected from the group consisting of magnesium, etc. In addition, the element M may be aluminum, gallium, yttrium, or tin. The oxide layer 330 may be an In-M oxide, an In-Zn oxide, or an M-Zn oxide. It may be used.

[0154] The transistor 300 is preferably made of a metal oxide having a low carrier density. In the case of lowering the carrier density of the oxide, the impurity concentration in the metal oxide is lowered, In this specification and the like, the impurity concentration is low and the defect level density is low. The metal oxide is said to be high purity or substantially high purity. Examples of the metals include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, and silicon. There are Kon and others.

[0155] In particular, hydrogen contained in metal oxides reacts with oxygen that bonds with metal atoms to form water, Oxygen vacancies may be formed in the metal oxide. If defects are present, the transistor may have normally-on characteristics. The defect where hydrogen has entered the oxygen vacancy acts as a donor, and electrons, which act as carriers, are generated. In addition, some of the hydrogen atoms bond with oxygen atoms that bond with metal atoms, and the electrons that are carriers Therefore, transistors using metal oxides containing a large amount of hydrogen The capacitor tends to have normally-on characteristics.

[0156] Therefore, when a metal oxide is used for the oxide layer 330, the hydrogen content in the metal oxide should be as low as possible. Specifically, in the case of metal oxides, secondary ion mass spectrometry (SIMS: Secondary Ion Mass Spectrometry) The resulting hydrogen concentration is 1×10 20 atoms / cm 3 Less than 1 x 10 19 atoms / cm 3 less than 5 × 10 18 atoms / cm 3 Less than, more Preferably 1 x 10 18 atoms / cm 3 Less than 100%. Impurities such as hydrogen are sufficiently reduced. By using this metal oxide in the channel formation region of a transistor, stable electrical characteristics can be achieved. can be granted.

[0157] When a metal oxide is used for the oxide layer 330, the conductive layer 342 (conductive layer 342a and conductive layer 3 42b) contacts with the oxide layer 330, oxygen in the oxide layer 330 is transferred to the conductive layer 342. The conductive layer 342 may be oxidized due to the diffusion of the conductive material. It is highly likely that the conductivity of the oxide layer 330 will decrease. The diffusion can be expressed as the conductive layer 342 absorbing oxygen from the oxide layer 330. can be done.

[0158] Oxygen in the oxide layer 330 diffuses into the conductive layer 342 (conductive layer 342a and conductive layer 342b). This allows for a connection between the conductive layer 342a and the oxide layer 330b and the oxide layer 330c, and between the conductive layer 342a and the oxide layer 330b and the oxide layer 330c. Layers are formed between the conductive layer 342b and the oxide layer 330b and between the conductive layer 342b and the oxide layer 330c, respectively. The layer contains more oxygen than the conductive layer 342 and therefore has insulating properties. At this time, the conductive layer 342, the layer, and the oxide layer 330b or the oxide layer The three-layer structure with 330c can be considered as a three-layer structure consisting of metal-insulator-semiconductor, In the case of a structure called MIS (Metal-Insulator-Semiconductor) There is a match.

[0159] Therefore, the conductive layer 342 (conductive layer 342a and conductive layer 342b) is formed by removing the water in the oxide layer 330. The element is easily diffused into the conductive layer 342, and the oxygen in the oxide layer 330 is easily diffused into the conductive layer 342. It is preferable that the oxide layer 3 is made of a conductive material that is resistant to corrosion. The hydrogen in the oxide layer 330 diffuses into the conductive layer 342, reducing the hydrogen concentration in the oxide layer 330. This can provide stable electrical characteristics to the transistor 300. The hydrogen in the oxide is easily diffused into the conductive layer, and the conductive layer is formed by removing the hydrogen from the oxide. It is sometimes expressed as being easy to absorb (easily absorbed). the conductive layer is resistant to oxidation; It may be expressed as follows.

[0160] The conductive material may be, for example, a conductor containing tantalum (Ta), titanium (Ti), or the like. In particular, it is preferable to use a conductor containing tantalum for the conductive layer 342. The conductor containing tantalum may contain nitrogen or oxygen. The body has the formula TaN x O y (x is a real number greater than 0 and less than or equal to 1.67, and y is greater than or equal to 0 It is preferable that the tantalum-containing conductor satisfies the following condition: It includes tantalum oxide, tantalum nitride, tantalum oxynitride, tantalum oxynitride, etc. In this specification and the like, a conductor containing tantalum is referred to as TaNx O y It may be written as:

[0161] TaN x O y In the above, the ratio of tantalum is preferably high. The lower the ratio, the better, and the smaller the values of x and y are. By doing so, TaN x O y The resistivity of the TaN decreases. x O y The transistor using the conductive layer 342 This can provide the transistor 300 with good electrical characteristics.

[0162] Also, TaN x O y In this case, a higher nitrogen ratio is preferable, and a larger value of x is preferable. TaN with a high nitrogen ratio x O y By using the conductive layer 342, the acid In addition, the layer formed between the conductive layer 342 and the oxide layer 330 can be prevented from being oxidized. The film thickness can be reduced.

[0163] Note that the hydrogen diffused into the conductive layer 342 may remain in the conductive layer 342. Hydrogen in the oxide layer 330 may be absorbed into the conductive layer 342. The hydrogen in the conductive layer 342 permeates the conductive layer 342 and reaches the structure provided around the conductive layer 342, or It may be emitted outside the transistor 300.

[0164] The hydrogen concentration in the oxide layer 330 is reduced, and a layer is formed between the conductive layer 342 and the oxide layer 330. To prevent hydrogen from diffusing into the oxide layer 330, the conductive layer 342 is formed to prevent hydrogen from diffusing into the conductive layer 342. The conductive layer 342 and the oxide layer 330 are made of a conductive material having a property of being easily broken down. It is preferable to provide a layer having a function of suppressing oxidation of the conductive layer 342 between the conductive layer 342 and the insulating layer 343. By providing the oxide layer 330, the conductive layer 342 and the oxide layer 330 are not in contact with each other. 2 can suppress the absorption of oxygen by the oxide layer 330.

[0165] The detailed configuration of the transistor 300 will be described below.

[0166] The insulating layer 314 prevents impurities such as water and hydrogen from diffusing into the transistor 300 from the substrate side. Therefore, the insulating layer 314 preferably functions as an insulating barrier film that suppresses the are hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, and nitrogen oxide molecules (NO, NO, The use of insulating materials that have the function of suppressing the diffusion of impurities such as NO2 and copper atoms Alternatively, the diffusion of oxygen (for example, at least one of oxygen atoms, oxygen molecules, etc.) It is preferable to use an insulating material that has the function of suppressing the above.

[0167] In this specification, the function of suppressing the diffusion of impurities or oxygen means the function of suppressing the diffusion of the impurities or oxygen. Or, it has the function of suppressing the diffusion of any one or all of the oxygen. The membrane that has the function of suppressing the diffusion of oxygen is called a membrane that is difficult for hydrogen or oxygen to permeate, or a membrane that is difficult for hydrogen or oxygen to permeate. is a membrane with low oxygen permeability, a membrane with barrier properties against hydrogen or oxygen, In addition, if the barrier film has conductivity, the barrier The rear film is sometimes called a conductive barrier film.

[0168] For example, an aluminum oxide film, a silicon nitride film, or the like can be used as the insulating layer 314. This is preferable. Impurities such as water and hydrogen are transported from the substrate side to the transistor side rather than the insulating layer 314. It is possible to suppress diffusion of the oxides to the transistor 300 side. This can prevent the oxygen from diffusing toward the substrate side of the insulating layer 314. The insulating layer 314 may have a laminated structure of two or more layers. In this case, The structure is not limited to a laminated structure, and may be a laminated structure made of different materials. For example, aluminum oxide Alternatively, a laminate of a silicon film and a silicon nitride film may be used.

[0169] For example, the insulating layer 314 may be a silicon nitride film formed by sputtering. It is preferable to use a film, as this can reduce the hydrogen concentration in the insulating layer 314. Impurities such as water and hydrogen diffuse from the substrate side to the transistor 300 side through the insulating layer 314. This can further reduce dispersion.

[0170] The insulating layer 316, which functions as an interlayer film, preferably has a lower dielectric constant than the insulating layer 314. By using a material with a low dielectric constant as the interlayer film, the parasitic capacitance that occurs between wiring can be reduced. For example, the insulating layer 316 can be formed of a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, or the like. Silicon film, silicon nitride film, fluorine-doped silicon oxide film, carbon-doped silicon oxide film Suitable materials include silicon dioxide films, silicon dioxide films with added carbon and nitrogen, and silicon dioxide films with pores. Please use it as you see fit.

[0171] The insulating layer 316 is a region where the hydrogen concentration is low and oxygen is present in excess of the stoichiometric composition (hereinafter The oxygen released by heating (hereinafter referred to as excess oxygen) For example, the insulating layer 316 is preferably formed by sputtering. It is preferable to use a silicon oxide film formed by depositing hydrogen on the oxide layer 330. Alternatively, oxygen can be supplied to the oxide layer 330, and the oxide layer 33 Therefore, the fluctuation of the electrical properties can be suppressed and the electrical properties can be stabilized. It is possible to provide a transistor having excellent electrical characteristics and improved reliability. .

[0172] The insulating layer 316 may have a laminated structure. For example, the insulating layer 316 may have at least a conductive layer. An insulating layer similar to the insulating layer 314 may be provided in the portion in contact with the side surface of the layer 305. With this structure, the conductive layer 305 is oxidized by oxygen contained in the insulating layer 316. Alternatively, the conductive layer 305 can prevent the insulating layer 316 from being oxidized. This can prevent the amount of oxygen absorbed from decreasing.

[0173] The conductive layer 305 may function as a second gate (also referred to as a bottom gate) electrode. In this case, the potential applied to the conductive layer 305 is linked to the potential applied to the conductive layer 360. By independently varying the threshold voltage (V th ) to control In particular, applying a negative potential to the conductive layer 305 can turn on the transistor 3. 00V th Therefore, it is possible to increase the conduction current and reduce the off-state current. Applying a negative potential to layer 305 increases the potential applied to conductive layer 360 compared to not applying a negative potential. The drain current when the potential is 0V can be reduced.

[0174] The conductive layer 305 is disposed to overlap the oxide layer 330 and the conductive layer 360. The layer 305 is preferably embedded in the insulating layer 314 or the insulating layer 316. stomach.

[0175] As shown in FIG. 8B, the conductive layer 305 is formed in a region closer to the oxide layer 330 than the channel formation region. In particular, as shown in FIG. 8(C), the conductive layer 305 is formed of an oxide layer. It is also found that the film extends in the region outside the end portion of 330 intersecting with the channel width direction. That is, it is preferable that the conductive oxide layer 330 is formed on the outer side of the side surface in the channel width direction. The layer 305 and the conductive layer 360 are preferably overlapped with each other via an insulating layer. By having the above, the electric field of the conductive layer 360 which functions as the first gate electrode and the electric field of the second gate electrode The electric field of the conductive layer 305, which functions as an electrode, forms a channel forming region of the oxide layer 330. It can be electrically surrounded.

[0176] As shown in FIG. 8(C), the conductive layer 305 is extended to function as a wiring. However, the present invention is not limited to this, and a conductive layer that functions as a wiring may be provided under the conductive layer 305. In addition, it is not necessary to provide one conductive layer 305 for each transistor. For example, the conductive layer 305 may be shared by a plurality of transistors.

[0177] In the transistor 300, the conductive layer 305 has a two-layer stack structure (a first conductive layer on an insulating layer 314). Although an example in which the conductive layer is a first conductive layer and a second conductive layer on the first conductive layer is shown, the present invention is not limited to this. For example, the conductive layer 305 may have a single layer or a laminated structure of three or more layers. When the structure has a laminated structure, it may be distinguished by assigning an ordinal number to the order of formation. do.

[0178] Here, the first conductive layer of the conductive layer 305 is composed of hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen It suppresses the diffusion of impurities such as nitrogen oxide molecules (N2O, NO, NO2, etc.) and copper atoms. It is preferable to use a conductive material having the function of oxygen (for example, oxygen atom, It is possible to use a conductive material having a function of suppressing the diffusion of at least one of oxygen molecules. preferable.

[0179] The first conductive layer of the conductive layer 305 is made of a conductive material that has the function of suppressing oxygen diffusion. This prevents the second conductive layer of the conductive layer 305 from being oxidized and the conductivity from decreasing. An example of a conductive material that has the function of suppressing oxygen diffusion is tantalum. It is preferable to use tantalum nitride, ruthenium, ruthenium oxide, etc. The first conductive layer of the conductive layer 305 has a single layer structure or a laminated structure using the above conductive material. For example, the first conductive layer of the conductive layer 305 is preferably a tantalum film, a tantalum nitride film, or the like. a lamination of a titanium film or a titanium nitride film with a ruthenium film or a ruthenium oxide film; You may do so.

[0180] The second conductive layer of the conductive layer 305 is made of a material mainly composed of tungsten, copper, or aluminum. It is preferable to use a conductive material having a high conductivity. Although the conductive layer is illustrated as a single layer, it may have a laminated structure. For example, a titanium film or titanium nitride film may be used. A laminate of a film and a film containing the conductive material may also be used.

[0181] The insulating layers 322 and 324 function as gate insulating layers.

[0182] The insulating layer 322 suppresses the diffusion of hydrogen (e.g., at least one of hydrogen atoms, hydrogen molecules, etc.). The insulating layer 322 preferably has a function of absorbing oxygen (for example, oxygen atoms, It is preferable that the material has a function of suppressing the diffusion of at least one element, such as an elementary molecule. The edge layer 322 is more effective at inhibiting the diffusion of hydrogen and / or oxygen than the insulating layer 324. It is preferable that

[0183] The material of the insulating layer 322 is either aluminum or hafnium, which is an insulating material. Insulators containing oxides of both aluminum oxide and aluminum oxide are preferably used. hafnium oxide, oxides containing aluminum and hafnium (hafnium aluminate) When the insulating layer 322 is formed using such a material, The layer 322 prevents oxygen from being released from the oxide layer 330 to the substrate side and prevents the peripheral area of the transistor 300 from being damaged. It functions as a layer that suppresses the diffusion of impurities such as hydrogen from the insulating layer 330 to the oxide layer 330. The provision of the insulating layer 322 prevents impurities such as hydrogen from diffusing into the inside of the transistor 300. This can suppress the generation of oxygen vacancies in the oxide layer 330. 305 is prevented from reacting with the oxygen contained in the insulating layer 324 and the oxide layer 330. can be done.

[0184] Alternatively, the insulator may contain, for example, aluminum oxide, bismuth oxide, germanium oxide, Niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, dioxide Alternatively, these insulators may be nitrided. The edge layer 322 is an insulating film containing these insulators, and is formed by adding a silicon oxide film, a silicon oxynitride film, Alternatively, a silicon nitride film may be laminated.

[0185] The insulating layer 322 may be made of, for example, aluminum oxide, hafnium oxide, tantalum oxide, or silica. lead zirconate titanate (PZT), strontium titanate (SrTiO3) Insulating materials, including so-called high-k materials such as (Ba,Sr)TiO3 (BST), The transistor may be formed in a single layer structure or a multilayer structure using the above-mentioned method. As this progresses, problems such as leakage current may occur due to the thinning of the gate insulating layer. By using a high-k material for the insulating layer that functions as a gate insulating layer, the physical thickness can be maintained. Therefore, it is possible to reduce the gate potential during transistor operation.

[0186] The insulating layer 324 in contact with the oxide layer 330 is preferably heated to release oxygen. For example, the insulating layer 324 may be formed using a silicon oxide film, a silicon oxynitride film, or the like as appropriate. By providing an insulating layer containing oxygen in contact with the oxide layer 330, the oxygen in the oxide layer 330 can be The defects can be reduced, and the reliability of the transistor 300 can be improved.

[0187] Specifically, the insulating layer 324 is made of an oxide material from which part of the oxygen is released by heating. The oxide layer that releases oxygen by heating is preferably a TDS (Thermal Distribution Strength) layer. The desorption spectroscopy analysis showed that the amount of oxygen molecules desorbed was 1.0 x10 18 molecules / cm 3 or more, preferably 1.0 × 10 19 molecu les / cm 3 More preferably, 2.0 × 10 19 molecules / cm 3 Below Above, or 3.0 x 10 20 molecules / cm 3 The oxide layer is as above. The surface temperature of the film during the TDS analysis is 100°C or higher and 700°C or lower, or The temperature is preferably in the range of 100°C or higher and 400°C or lower.

[0188] The insulating layer 324 preferably has a low hydrogen concentration and an excess oxygen region or excess oxygen. For example, the insulating layer 316 may be formed using a material similar to that of the insulating layer 316 .

[0189] The insulating layer 322 and the insulating layer 324 may have a stacked structure of two or more layers. The laminated structure is not limited to a laminated structure made of the same material, and may be a laminated structure made of different materials.

[0190] The oxide layer 330 preferably has a layered structure made up of oxides with different chemical compositions. Specifically, in the metal oxide used for the oxide layer 330a, the metal element that is the main component is The atomic ratio of the element M is the main component in the metal oxide used for the oxide layer 330b. It is preferable that the atomic ratio of the element M to the metal element is larger than that of the oxide layer 330. In the metal oxide used in the oxide layer 330a, the atomic ratio of element M to In is It is preferable that the atomic ratio of element M to In in the metal oxide used is larger. In addition, in the metal oxide used for the oxide layer 330b, the atomic ratio of In to the element M is , which is greater than the atomic ratio of In to element M in the metal oxide used for the oxide layer 330a. In addition, the oxide layer 330c is preferably larger than the oxide layer 330a or the oxide layer 330b. Any metal oxide that can be used for 0b can be used.

[0191] The oxide layer 330b and the oxide layer 330c preferably have crystallinity. CAAC-OS (c-axis aligned crystalline oxide) It is preferable to use a semiconductor such as CAAC-OS. Crystalline oxides have few impurities and defects (such as oxygen vacancies), and are highly crystalline and dense. Therefore, the oxide layer 330b formed by the source electrode or the drain electrode This prevents the extraction of oxygen from the oxide layer even after heat treatment. Since oxygen extraction from layer 330b can be reduced, transistor 300 can be fabricated It is stable against high temperatures (so-called thermal budget) in the process.

[0192] It is preferable to use CAAC-OS as the oxide layer 330c. The c-axis of the crystal is oriented in a direction substantially perpendicular to the surface on which the oxide layer 330c is formed or the upper surface of the oxide layer 330c. It is preferable that the CAAC-OS has a property of easily transferring oxygen in the direction perpendicular to the c-axis. Therefore, the oxygen contained in the oxide layer 330c is efficiently supplied to the oxide layer 330b. can be provided.

[0193] The energy levels of the conduction band minimums of the oxide layer 330a and the oxide layer 330c are It is preferable that the energy level of the oxide is higher than the energy level of the bottom of the conduction band of Ob. The electron affinity of layer 330a and oxide layer 330c is less than the electron affinity of oxide layer 330b. In this case, the oxide layer 330c can be used for the oxide layer 330a. In this case, the main path of the carrier is the oxide layer. The result is 330b.

[0194] Here, at the junction of the oxide layer 330a, the oxide layer 330b, and the oxide layer 330c, In other words, the energy level of the oxide layer 330a, The energy level of the conduction band minimum at the junction between the oxide layer 330b and the oxide layer 330c can be said to be continuously changing or continuously joining. The interface between the oxide layer 330a and the oxide layer 330b, and the interface between the oxide layer 330b and the oxide layer 330 It is preferable to reduce the defect level density of the mixed layer formed at the interface with c.

[0195] Specifically, the oxide layer 330a and the oxide layer 330b, the oxide layer 330b and the oxide layer 330 c has a common element other than oxygen as a main component, and a mixed layer with a low defect level density is formed. For example, when the oxide layer 330b is an In-Ga-Zn oxide, the oxide The oxide layer 330a and the oxide layer 330c may be In-Ga-Zn oxide or Ga-Zn oxide. Alternatively, gallium oxide or the like may be used.

[0196] Specifically, the oxide layer 330a is made of In:Ga:Zn=1:3:4 [atomic ratio], or Alternatively, a metal oxide having an atomic ratio of 1:1:0.5 may be used. As the atomic ratio, In:Ga:Zn=1:1:1 or In:Ga:Zn=4:2 The oxide layer 330c may be made of a metal oxide having an atomic ratio of In:3. Ga:Zn=1:3:4[atomic ratio], In:Ga:Zn=4:2:3[atomic ratio], G Metal oxides with a:Zn=2:1 [atomic ratio] or Ga:Zn=2:5 [atomic ratio] Just use it.

[0197] When a metal oxide film is formed by sputtering, the above atomic ratio is The atomic ratio of the metal oxide is not limited to the atomic ratio of the metal oxide. The atomic ratio may be the ratio of the number of atoms of the cations to the number of atoms of the cations.

[0198] By configuring the oxide layer 330a and the oxide layer 330c as described above, the oxide layer 330a and the oxide layer 330c At the interface with oxide layer 330b and at the interface between oxide layer 330b and oxide layer 330c The defect level density can be reduced, which reduces the influence of interface scattering on carrier conduction. As a result, the transistor 300 can have a high on-state current and high frequency characteristics. Cut.

[0199] The oxide layer 330c may have a stacked structure of two or more layers. c may have a first oxide layer and a second oxide layer on the first oxide layer. .

[0200] The first oxide layer of the oxide layer 330c comprises the metal oxide used in the oxide layer 330b. It is preferable that the metal element contains at least one of the metal elements, and it is more preferable that the metal element contains all of the metal elements. For example, the first oxide layer of the oxide layer 330c may be an In-Ga-Zn oxide. The oxide layer 330c is made of an In-Ga-Zn oxide film, and the second oxide layer is made of an In-Ga-Zn oxide film. It is preferable to use a α-Zn oxide film or a gallium oxide film. 3. The defect level density at the interface between the first oxide layer of oxide layer 330b and the first oxide layer of oxide layer 330c can be reduced. Also, the second oxide layer of the oxide layer 330c can be formed by the first oxide layer of the oxide layer 330c. The insulating layer 350 and the oxide layer 33 preferably suppress the diffusion or permeation of oxygen. By providing a second oxide layer of oxide layer 330c between the first oxide layer of oxide layer 330c, insulation is achieved. This can prevent oxygen contained in the layer 380 from diffusing into the insulating layer 350. Therefore, the oxygen is supplied to the oxide layer 330b through the first oxide layer of the oxide layer 330c. It will be easier to get paid.

[0201] In addition, the energy of the conduction band minimum of the second oxide layer of the oxide layer 330a and the oxide layer 330c is The energy level of the first oxide layer 330b and the first oxide layer 330c is In other words, the oxide layer 330a and the oxide layer 330b are preferably at a higher energy level than the oxide layer 330a. The electron affinity of the second oxide layer of oxide layer 330c is It is preferable that the electron affinity of the first oxide layer be smaller than that of the oxide layer 330. The second oxide layer of the oxide layer 330c is made of a metal oxide that can be used for the oxide layer 330a. The first oxide layer of the metal layer 330c is made of a metal oxide that can be used for the oxide layer 330b. In this case, the main path of the carriers is not only the oxide layer 330b but also the The first oxide layer of the oxide layer 330c may also be a major path for carriers.

[0202] The conductive layer 342 is made of the above-mentioned TaN x O y It is preferable to use TaN x O y The titanium nitride may contain aluminum. Ruthenium nitride, ruthenium oxide, ruthenium nitride, oxide containing strontium and ruthenium It is also possible to use oxides containing lanthanum and nickel. These materials are resistant to oxidation. It is preferable because it is a material that is electrically conductive and maintains its conductivity even when it absorbs oxygen.

[0203] As shown in FIG. 8B, the insulating layer 354 is formed on the upper and side surfaces of the conductive layer 342a and the conductive layer 34 2b, the side surfaces of the oxide layer 330a and the oxide layer 330b, and the insulating layer 32 It is preferable that the insulating layer 380 contacts a part of the upper surface of the insulating layer 380. The insulating layer 354 separates the insulating layer 324, the oxide layer 330a, and the oxide layer 330b. To be separated.

[0204] The insulating layer 354, like the insulating layer 322, serves to suppress the diffusion of either or both of hydrogen and oxygen. For example, the insulating layer 354 has a function of insulating the insulating layer 324 and the insulating layer 38. It is preferable that the material has a function of suppressing the diffusion of one or both of hydrogen and oxygen rather than zero. As a result, hydrogen contained in the insulating layer 380 is transferred to the oxide layer 330a and the oxide layer 330b. Furthermore, the insulating layer 322 and the insulating layer 354 can prevent the diffusion of the metal. By surrounding the insulating layer 324, the oxide layer 330, etc., impurities such as water and hydrogen are prevented from entering from the outside. Therefore, diffusion of the ions into the insulating layer 324 and the oxide layer 330 can be suppressed. This can provide the transistor 300 with good electrical characteristics and reliability.

[0205] The insulating layer 354 may be, for example, an oxide of one or both of aluminum and hafnium. In this case, the insulating layer 354 is formed by atomic layer deposition (ALD: At It is preferable that the film is formed by a comomic layer deposition method. The ALD method is a film formation method with good coating properties, so unevenness of the insulating layer 354 does not cause discontinuities or the like. can be prevented from forming.

[0206] The insulating layer 354 is preferably made of an insulating film containing aluminum nitride, for example. This allows the film to have excellent insulation and thermal conductivity, making it suitable for use in transformers. This can improve the heat dissipation performance of the heat generated when the resistor 300 is driven. Silicon, silicon nitride oxide, etc. can also be used.

[0207] The insulating layer 354 may be made of, for example, an oxide containing gallium. Oxides may have the function of suppressing the diffusion of either or both hydrogen and oxygen. The oxide containing gallium is preferably gallium oxide, gallium zinc ... Indium gallium zinc oxide or the like can be used as the insulating layer 354. When using a di-gallium zinc oxide film, the atomic ratio of gallium to indium is large. By increasing the atomic ratio, the insulating properties of the oxide film can be improved. It is possible.

[0208] The insulating layer 350 functions as a gate insulating layer. The insulating layer 350 is formed on the oxide layer 330c. The insulating layer 350 is preferably arranged in contact with the surface. Silicon, silicon oxynitride, silicon nitride, silicon oxide doped with fluorine, and carbon doped silicon oxide doped with carbon and nitrogen, silicon oxide with vacancies In particular, silicon oxide and silicon oxynitride are stable against heat. Therefore, it is preferable.

[0209] The insulating layer 350 is formed using an insulating film that releases oxygen when heated, similar to the insulating layer 324. It is preferable to use an insulating film that releases oxygen when heated as the insulating layer 350. By providing the oxide layer 330b in contact with the upper surface of the oxide layer 330c, the channel forming region of the oxide layer 330b This effectively supplies oxygen to the oxide layer 330b, thereby reducing oxygen vacancies in the channel formation region of the oxide layer 330b. Therefore, the fluctuation of the electrical characteristics can be suppressed, and the electrical characteristics can be stabilized. In this way, a transistor with improved reliability can be provided. In addition, it is preferable that the concentration of impurities such as water and hydrogen in the insulating layer 350 is reduced. The thickness of the layer 350 is preferably 1 nm or more and 20 nm or less.

[0210] The conductive layer 360 includes a conductive layer 360a and a conductive layer 360b on the conductive layer 360a. For example, the conductive layer 360a is preferably formed so as to surround the bottom and side surfaces of the conductive layer 360b. It is preferable to place

[0211] The conductive layer 360a contains hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, and nitrogen oxide molecules. It is preferable to use a conductive material that has the function of suppressing the diffusion of impurities such as copper atoms. Alternatively, the function of suppressing the diffusion of oxygen (for example, at least one of oxygen atoms, oxygen molecules, etc.) It is preferable to use a conductive material having the function.

[0212] The conductive layer 360a has a function of suppressing the diffusion of oxygen, and thus the conductive layer 360a is included in the insulating layer 350. This can prevent the conductive layer 360b from being oxidized by oxygen and reducing its conductivity. Examples of conductive materials that have the function of suppressing oxygen diffusion include tantalum and tantalum nitride. It is preferable to use ruthenium, ruthenium oxide, or the like.

[0213] The conductive layer 360 also functions as wiring, so it is preferable to use a conductive material with high conductivity. For example, the conductive layer 360b may be made of a material mainly containing tungsten, copper, or aluminum. The conductive layer 360b may have a layered structure. For example, a laminated structure of a titanium film, a titanium nitride film and a film containing the above-mentioned conductive material may be used. .

[0214] In FIG. 8, the conductive layer 360 is shown as a two-layer structure consisting of a conductive layer 360a and a conductive layer 360b. However, it may have a single layer structure or a laminated structure of three or more layers.

[0215] In the transistor 300, the conductive layer 360 fills an opening formed in the insulating layer 380 or the like. By forming the conductive layer 360 in this manner, the conductive layer 360 is The conductive layer 360 is placed in the region between the conductive layer 342a and the conductive layer 342b without being aligned. can be positioned reliably.

[0216] As shown in FIG. 8B, the upper surface of the conductive layer 360 is connected to the upper surface of the insulating layer 350 and the oxide layer 33. It roughly coincides with the top surface of 0c.

[0217] As shown in FIG. 8C, the insulating layer 322 The conductive layer 360 and the oxide layer 330b do not overlap with each other. The height of the bottom surface of the region is preferably lower than the height of the bottom surface of the oxide layer 330b. The conductive layer 360, which functions as an electrode, is connected to the channel of the oxide layer 330b via the insulating layer 350 or the like. By covering the side and top surfaces of the panel forming region, the electric field of the conductive layer 360 is Therefore, the on-state of the transistor 300 is easily affected by the ion implantation. This increases the on-state current and improves the frequency characteristics.

[0218] The insulating layer 380 is formed by connecting the insulating layer 324, the oxide layer 330, and the conductive layer 330 via the insulating layer 354. 42. The upper surface of the insulating layer 380 may be planarized.

[0219] The insulating layer 380, which functions as an interlayer film, preferably has a low dielectric constant. By using this as an interlayer film, the parasitic capacitance between wirings can be reduced. It is preferable that the insulating layer 310 is formed using the same material as the insulating layer 316. Silicon and silicon oxynitride are preferred because they are thermally stable. Materials such as silicon oxynitride and silicon oxide with vacancies release oxygen when heated. This is preferable because the region containing the metal oxide can be easily formed.

[0220] It is preferable that the concentration of impurities such as water and hydrogen in the insulating layer 380 is reduced. The edge layer 380 preferably has a low hydrogen concentration and an excess oxygen region or regions, For example, the insulating layer 380 may be formed using the same material as the insulating layer 316. The above laminated structure may be used.

[0221] The insulating layer 374, like the insulating layer 314, is formed by impurities such as water and hydrogen penetrating from above. It is preferable that the insulating barrier film functions as an insulating barrier film that suppresses diffusion of the insulating material to the insulating layer. The edge layer 374 has a low hydrogen concentration and a function of suppressing hydrogen diffusion, similar to the insulating layer 314. It is preferred that the compound has the following structure:

[0222] As shown in FIG. 8B, the insulating layer 374 is formed by stacking the conductive layer 360, the insulating layer 350, and the oxide layer 360. It is preferable that the insulating layer 381 and the like are in contact with each other. This can prevent impurities such as hydrogen contained in the insulating layer 350 from being mixed into the insulating layer 350. This makes it possible to suppress adverse effects on the electrical characteristics and reliability of the transistor. Cut.

[0223] An insulating layer 381 functioning as an interlayer film is preferably provided over the insulating layer 374. The layer 381 preferably has a low dielectric constant, similar to the insulating layer 316. 81 is a film in which the concentration of impurities such as water and hydrogen is reduced, similar to the insulating layer 324. It is preferable.

[0224] The insulating layer 381, the insulating layer 374, the insulating layer 380, and the insulating layer 354 are provided with openings through which a conductive layer is formed. The conductive layer 340a and the conductive layer 340b are disposed. The conductive layers 340a and 340b are provided facing each other with the conductive layer 360 sandwiched therebetween. The height may be flush with the upper surface of the insulating layer 381 .

[0225] In addition, the insulating layer 381, the insulating layer 374, the insulating layer 380, and the insulating layer 354 are in contact with the side walls of the openings. An insulating layer 341a is provided thereon, and a conductive layer 340a is formed in contact with the side surface of the insulating layer 341a. A conductive layer 342a is located on at least a portion of the bottom of the opening, and the conductive layer 340a Similarly, the insulating layer 381, the insulating layer 374, the insulating layer 380, and the insulating layer 342a are in contact with each other. An insulating layer 341b is provided in contact with the side wall of the opening of the edge layer 354, and a conductive layer A conductive layer 342b is formed on at least a portion of the bottom of the opening. The conductive layer 340b contacts the conductive layer 342b.

[0226] The conductive layer 340a and the conductive layer 340b are mainly composed of tungsten, copper, or aluminum. It is preferable to use a conductive material that acts as a component.

[0227] The conductive layer 340a and the conductive layer 340b may have a stacked structure. Now, regarding a structure in which the conductive layer 340a and the conductive layer 340b are provided as a two-layer stack, However, the present invention is not limited to this. Alternatively, it may have a laminated structure of three or more layers.

[0228] The insulating layer 341a and the insulating layer 341b may be, for example, the insulating layer 314, the insulating layer 354, etc. The insulating layer 341a and the insulating layer 341b can be formed of an insulating film. Since the insulating layer 354 is provided in contact with the insulating layer 354, impurities such as water and hydrogen contained in the insulating layer 380 can be prevented. Preventing impurities from diffusing into the oxide layer 330 through the conductive layer 340a and the conductive layer 340b Further, oxygen contained in the insulating layer 380 can be oxidized to the conductive layer 340a and the conductive layer 340b. It can prevent being absorbed into 0b.

[0229] Although not shown, the conductive layer 340a and the conductive layer 340b are connected to each other as wiring. The conductive layer functioning as a wiring may be formed using tungsten, It is preferable to use a conductive material containing copper or aluminum as a main component. The conductive layer may have a laminated structure, for example, a titanium film, a titanium nitride film, and the conductive material. The conductive layer may be formed by laminating a film containing the conductive layer to a film that is filled in an opening provided in the insulating layer. It may be formed as follows.

[0230] Although not shown, a resistivity of 1.0×10 13 Ωcm or more 1 .0×10 15 Ωcm or less, preferably 5.0×10 13 Ωcm or more 5.0×10 14 Ω It is preferable to provide an insulating layer having a resistivity of not more than 100 cm on the conductive layer. By providing the insulating layer, the insulating layer can maintain insulation while protecting the transistor 300 and the above-mentioned The charge accumulated between the wiring of the conductive layer is dispersed, and the transistor by the charge and the transistor This is preferable because it can prevent poor performance and electrostatic breakdown in electronic devices that have a photoresist.

[0231] As described above, the display device of the present embodiment includes a plurality of light-emitting diodes and a plurality of transistors. This allows the display device to be bonded at the same time, reducing the manufacturing cost and increasing the yield. In addition, micro LEDs and metal oxide transistors can be used By combining these, a display device with reduced power consumption can be realized.

[0232] In addition, in the display device of this embodiment, the size of the transistor can be reduced, so that the resolution can be improved. It is easy to increase the display area and to apply the invention to electronic devices having relatively small displays.

[0233] This embodiment mode can be combined with other embodiment modes as appropriate. In the case where multiple configuration examples are shown in one embodiment, the configuration examples may be combined as appropriate. It is possible to do this.

[0234] (Embodiment 2) In this embodiment, a pixel of a display device of one embodiment of the present invention will be described with reference to FIGS.

[0235] [Pixels] The display device of this embodiment is a matrix of m rows and n columns (m and n are integers of 1 or more). 10, a pixel 200(i,j) (i is 1 or more and m or less) is arranged. An example of a circuit diagram for the following integers (j is an integer between 1 and n):

[0236] The pixel 200(i, j) shown in FIG. 10 includes a light emitting element 210, a switch SW21, and a switch S It includes W22, a transistor M, and a capacitive element C1.

[0237] In this embodiment, a transistor is used as the switch SW21. The gate of SW21 is electrically connected to the scanning line GL1(i). One of the source and drain is electrically connected to the signal line SL(j), and the other is connected to the transistor It is electrically connected to the gate of M.

[0238] In this embodiment, a transistor is used as the switch SW22. The gate of the switch SW22 is electrically connected to the scanning line GL2(i). The source and drain of the transistor M are electrically connected to the wiring COM at one end and the gate and drain at the other end. It is electrically connected to the port.

[0239] The gate of the transistor M is connected to one electrode of the capacitance element C1, the source of the switch SW21, and The other of the drains of the switch SW21 and the other of the source and drain of the switch SW22 is electrically connected to the other of the drains of the switch SW21 and the other of the source and drain of the switch SW22. One of the source and drain of the transistor M is electrically connected to the wiring CATHODE. The other end is electrically connected to the cathode of the light emitting element 210 .

[0240] The other electrode of the capacitance element C1 is electrically connected to the wiring CATHODE.

[0241] The anode of the light emitting element 210 is electrically connected to the wiring ANODE.

[0242] The scanning line GL1(i) has the function of supplying a selection signal. The scanning line GL2(i) has the function of supplying a control signal. The signal line SL(j) has a function of supplying an image signal. A constant potential is supplied to the wire VCOM, wire CATHODE, and wire ANODE. The anode side of the light emitting element 210 is set to a high potential, and the cathode side is set to a lower potential than the anode side. It is possible.

[0243] The switch SW21 is controlled by a selection signal to control the selection state of the pixel 200. It functions as a selection transistor.

[0244] The transistor M controls the current flowing through the light emitting element 210 in accordance with the potential supplied to the gate. When the switch SW21 is in a conductive state, the signal line SL The image signal supplied to (j) is supplied to the gate of the transistor M, and depending on the potential, The luminance of the light emitting element 210 can be controlled.

[0245] The switch SW22 has the function of controlling the gate potential of the transistor M based on a control signal. Specifically, the switch SW22 has a potential that makes the transistor M non-conductive. It can be supplied to the gate of transistor M.

[0246] The switch SW22 can be used to control, for example, the pulse width. During this period, a current can be supplied from the transistor M to the light emitting element 210. The element 210 can express gray scales based on an image signal and a control signal.

[0247] Here, a channel is formed in each transistor of the pixel 200(i, j). It is preferable to use a transistor using a metal oxide (oxide semiconductor) for a semiconductor layer. stomach.

[0248] A transistor using metal oxides with a wider band gap and lower carrier density than silicon The transistor can realize an extremely small off-state current. The charge stored in the capacitor connected in series with the transistor is discharged over a long period of time by the current. Therefore, the switch connected in series to the capacitance element C1 The switch SW21 and the switch SW22 are made of a transistor including an oxide semiconductor. Other transistors are also preferably transistors using oxide semiconductors. By using a star, the manufacturing cost can be reduced.

[0249] In addition, the transistor included in the pixel 200(i, j) is provided with a semiconductor in which a channel is formed. Silicon-based transistors can also be used. By using highly crystalline silicon such as silicon dioxide, it is possible to achieve high field-effect mobility. This is preferable because it allows for faster operation.

[0250] In addition, an oxide semiconductor is applied to at least one of the transistors included in the pixel 200(i, j). The structure uses transistors made of silicon and other transistors. That's fine.

[0251] In FIG. 10, the transistors are shown as n-channel transistors. However, a p-channel transistor can also be used.

[0252] [Transistor] Next, a transistor that can be used in a display device will be described.

[0253] The structure of the transistor included in the display device is not particularly limited. It may be a staggered transistor, or an inverse staggered transistor. In addition, the transistor may be of either a top gate structure or a bottom gate structure. Alternatively, gate electrodes may be provided above and below the channel.

[0254] The transistor included in the display device may be, for example, a transistor using a metal oxide in a channel formation region. This allows the realization of a transistor with extremely low off-state current. It can be realized.

[0255] Alternatively, the transistors included in the display device may include transistors having silicon in their channel formation regions. As the transistor, for example, a transistor having amorphous silicon may be used. a transistor having crystalline silicon (typically, low-temperature polysilicon) Examples of such a transistor include a transistor having single crystal silicon and a transistor having a silicon nitride layer.

[0256] [Metal oxides] Metal oxides that can be used in the semiconductor layer of a transistor will be described below.

[0257] In this specification and the like, metal oxides containing nitrogen are also referred to as metal oxides. Nitrogen-containing metal oxides are also called metal oxynitrides (met). For example, zinc oxynitride (ZnON) Any nitrogen-containing metal oxide may be used for the semiconductor layer.

[0258] In this specification and the like, CAAC (c-axis aligned crystal ), and CAC (Cloud-Aligned Composite) CAAC represents an example of a crystal structure, and CAC represents an example of a function or material configuration.

[0259] For example, the semiconductor layer is made of CAC (Cloud-Aligned Composite)-O S can be used.

[0260] CAC-OS or CAC-metal oxide is a material that has the function of conductivity in some parts. The material has an insulating function in part and a semiconductor function in the whole. Note that CAC-OS or CAC-metal oxide is used as a semiconductor for transistors. When used in a layer, the conductive function is to allow electrons (or holes) to flow as carriers. The insulating function is to prevent the flow of electrons, which act as carriers. By making the functions of the two complementary to each other, the switching function (On / Off) is realized. CAC-OS or CAC-metal oxide is given the function of In CAC-OS or CAC-metal oxide, By separating the functions, the functionality of both can be maximized.

[0261] In addition, CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. In addition, the conductive region and the insulating region are formed at the nanoparticle level in the material. The conductive and insulating regions may be separated by a thin film. In addition, the conductive area may be observed as a cloud-like connected area with a blurred periphery. This may be the case.

[0262] In addition, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region are The peripheral region is 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. The following sizes may be dispersed in the material:

[0263] In addition, CAC-OS or CAC-metal oxide has different band gaps. For example, CAC-OS or CAC-metal oxidized de is a component with a wide gap due to the insulating region and a component with a narrow gap due to the conductive region. In this configuration, when carriers flow, In the narrow gap component, carriers mainly flow. The component having a wide gap acts complementary to the component having a narrow gap. Carriers also flow into the wide-gap component in conjunction with the component with a wide gap. AC-OS or CAC-metal oxide is placed in the channel formation region of the transistor. When used, the transistor has a high current driving force in the on state, i.e., a large on-current. Furthermore, high field-effect mobility can be obtained.

[0264] That is, CAC-OS or CAC-metal oxide is a matrix composite material. (matrix composite), or metal matrix composite It can also be called a matrix composite.

[0265] Oxide semiconductors (metal oxides) are divided into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. As a non-single-crystal oxide semiconductor, for example, CAAC-OS (ca xis aligned crystalline oxide semiconductor tor), polycrystalline oxide semiconductor, nc-OS (nanocrystalline oxide de semiconductor), pseudo-amorphous oxide semiconductor (a-like OS: amorphous-like oxide semiconductor), and amorphous and oxide semiconductors.

[0266] CAAC-OS has a c-axis orientation and multiple nanocrystals are connected in the ab-plane direction. The crystal structure has distortion. The distortion is the area where multiple nanocrystals are connected. In the region, the lattice arrangement is changed between a region with a uniform lattice arrangement and another region with a uniform lattice arrangement. Indicates the point where the direction is changing.

[0267] Nanocrystals are basically hexagonal, but they are not limited to regular hexagonal shapes and may be non-regular hexagonal. In addition, the distortion may have a lattice arrangement such as a pentagon or a heptagon. In CAAC-OS, clear grain boundaries are observed even near the strain. It is difficult to confirm the grain boundary due to the distortion of the lattice arrangement. This is because the CAAC-OS has a high SiO2 content in the ab-plane direction. The oxygen atoms are not densely packed, and the bond distance between atoms changes due to the substitution of metal elements. This is because distortion can be tolerated by, for example, adjusting the distortion.

[0268] The CAAC-OS also includes a layer containing indium and oxygen (hereinafter referred to as an In layer) and an element M , zinc, and oxygen layers (hereinafter referred to as (M, Zn) layers) are stacked. It is also called a layered structure. Indium and element M are mutually substitutable. When the element M in the (M,Zn) layer is replaced with indium, the (In,M,Zn) layer and Also, when indium in the In layer is replaced with element M, the (In,M) layer It can also be expressed as:

[0269] CAAC-OS is a metal oxide with high crystallinity. Since it is difficult to identify grain boundaries, the decrease in electron mobility caused by grain boundaries is unlikely to occur. In addition, the crystallinity of metal oxides can be reduced by the incorporation of impurities or the generation of defects. Therefore, CAAC-OS has impurities and defects (oxygen vacancies (V O :oxygen va It can also be said to be a metal oxide with low levels of cations such as cations. Metal oxides with OS have stable physical properties. Metal oxides are heat resistant and highly reliable.

[0270] nc-OS is a material that can be used in microscopic areas (e.g., areas between 1 nm and 10 nm, especially areas between 1 nm and 3 nm). The nc-OS has periodic atomic arrangement in the nanometer range (nm or less). There is no regularity in the crystal orientation between the crystals. Therefore, no orientation is observed throughout the film. Therefore, depending on the analysis method, nc-OS may be distinguished from a-like OS or amorphous oxide semiconductor. It may be difficult to distinguish between the two.

[0271] Indium gallium oxide, a type of metal oxide containing indium, gallium, and zinc, is In the case of magnesium-gallium-zinc oxide (IGZO), the nanocrystals mentioned above provide a stable structure. In particular, IGZO tends to have difficulty growing crystals in the atmosphere. Small crystals (e.g., crystals of a few mm or a few cm) are more likely to be formed than large crystals (here, crystals of a few mm or a few cm). , the nanocrystals mentioned above) may be structurally more stable.

[0272] The a-like OS is a metal oxide semiconductor with a structure between the nc-OS and amorphous oxide semiconductor. A-like OS has voids or low density areas. e-OS has lower crystallinity than nc-OS and CAAC-OS.

[0273] Oxide semiconductors (metal oxides) have a variety of structures, each with different properties. The oxide semiconductor of one embodiment of the present invention is an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-lik The crystalline structure may have two or more of e-OS, nc-OS, and CAAC-OS.

[0274] The metal oxide film functioning as a semiconductor layer is heated by either an inert gas or an oxygen gas. The metal oxide film can be formed by using both of the oxygen flow rate ratio and the oxygen flow rate ratio. However, in order to obtain a transistor with high field effect mobility, In this case, the oxygen flow rate ratio (oxygen partial pressure) during the deposition of the metal oxide film is 0% or more and 3% or less. 0% or less is preferable, 5% or more and 30% or less is more preferable, and 7% or more and 15% or less is even more preferable. preferable.

[0275] This embodiment mode can be combined with other embodiment modes as appropriate.

[0276] (Embodiment 3) In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS. 11 to 15. do.

[0277] The electronic devices of this embodiment each include a display device according to one embodiment of the present invention in a display portion. Such a display device has high display quality and low power consumption. The device can be easily made larger and with higher resolution. It is possible.

[0278] Examples of electronic devices include television sets, desktop or notebook PCs, etc. Personal computers, computer monitors, digital signage, pachinko machines, etc. In addition to electronic devices with relatively large screens such as large game consoles, digital cameras, Digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals Examples include audio equipment, sound reproduction devices, etc.

[0279] In particular, the display device of one embodiment of the present invention can have high resolution, and therefore can be used on a relatively small screen. The present invention can be suitably used in electronic devices having a display unit. For example, wristwatch-type or bracelet-type information terminals (wearable devices) and head-mounted devices VR devices such as sprayers, AR glasses, and MR devices, etc. The present invention can be suitably used for wearable devices that can be attached to equipment.

[0280] The electronic device of this embodiment includes sensors (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, Distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation (including the ability to measure radiation, flow rate, humidity, gradient, vibration, odor or infrared) It may be possible.

[0281] The electronic device of this embodiment can have various functions. For example, Functions for displaying still images, videos, text images, etc. on the display, touch panel function, calendar - Functions to display date or time, etc., and to run various software (programs) Functions, wireless communication functions, and functions for reading programs or data recorded on recording media etc.

[0282] 11A shows a perspective view of an eyeglass-type electronic device 900. The electronic device 900 has a pair of A display panel 901, a pair of housings 902, a pair of optical members 903, a pair of mounting portions 904, etc. Has.

[0283] The electronic device 900 displays an image displayed on the display panel 901 in a display area 906 of the optical member 903. Since the optical member 903 is translucent, the user can project an image. The image displayed in the display area 906 can be viewed superimposed on the transmitted image viewed through 903. Therefore, electronic device 900 is an electronic device capable of AR display.

[0284] The display panel 901 of the electronic device 900 has a function of capturing an image in addition to a function of displaying an image. In this case, the electronic device 900 displays the image via the optical member 903. The panel 901 can receive light incident on it, convert it into an electrical signal, and output it. The image of the user's eye or the eye and its surroundings is captured and transmitted to the outside or to an electric source as image information. The data can be output to a calculation unit included in the child device 900.

[0285] One of the housings 902 is provided with a camera 905 that can capture images of the area in front. Although not shown, a wireless receiver or a cable can be connected to either one of the housings 902. A connector is provided to supply a video signal or the like to the housing 902. By placing an acceleration sensor such as a gyro sensor on the 02, the direction of the user's head can be detected. It is also possible to detect the orientation and display an image in the display area 906 according to the orientation. 902 is preferably provided with a battery, which can be charged wirelessly or by wire. It is preferable to be able to do this.

[0286] A method for projecting an image onto the display area 906 of the electronic device 900 will be described with reference to FIG. 11(B). A display panel 901, a lens 911, and a reflector 912 are provided inside the housing 902. In addition, a half mirror is provided in the portion of the optical member 903 corresponding to the display area 906. The reflecting surface 913 functions as a reflecting surface.

[0287] Light 915 emitted from the display panel 901 passes through the lens 911 and is reflected by the reflector 912. Inside the optical member 903, the light 915 is reflected by the optical member 903. The light is repeatedly totally reflected at the end face of 903 and reaches the reflecting surface 913, where it is formed into an image. As a result, the user can see the light 915 reflected by the reflective surface 913 and the optical Both the light 916 transmitted through the material 903 (including the reflective surface 913) and the light 916 transmitted through the material 903 can be seen. .

[0288] FIG. 11 shows an example in which the reflector 912 and the reflecting surface 913 each have a curved surface. This allows for greater freedom in optical design than when these are flat, and The thickness of the optical member 903 can be reduced. It may also be a surface.

[0289] The reflector 912 may be a member having a mirror surface, and preferably has high reflectivity. Furthermore, a half mirror that utilizes the reflection of a metal film may be used as the reflecting surface 913. However, if a prism that utilizes total reflection is used, the transmittance of the transmitted light 916 can be increased. can.

[0290] Here, the electronic device 900 is configured to detect a distance and an angle between the lens 911 and the display panel 901. It is preferable to have a mechanism for adjusting either one or both of these. For example, the lens 911 and the display panel 90 1 may be configured to be movable in the direction of the optical axis.

[0291] The electronic device 900 preferably has a mechanism that allows the angle of the reflector 912 to be adjusted. By changing the angle of the reflector 912, the position of the display area 906 where the image is displayed can be changed. This allows the display area 906 to be positioned optimally according to the position of the user's eyes. It becomes possible to place

[0292] The display device of one embodiment of the present invention can be applied to the display panel 901. The electronic device 900 can be made to be capable of displaying images with extremely high definition.

[0293] 12(A) and 12(B) are perspective views of a goggle-type electronic device 950. 12A) is a perspective view showing the front, top, and left side of the electronic device 950, and FIG. 12B) is a perspective view showing the front, top, and left side of the electronic device 950. 9A and 9B are perspective views showing the back, bottom, and right side of electronic device 950. FIG.

[0294] The electronic device 950 includes a pair of display panels 951, a housing 952, a pair of mounting portions 954, and a buffer portion. The pair of display panels 951 are housed in a housing 952. The lens 956 is provided at a position where the lens 956 can be seen.

[0295] The electronic device 950 is an electronic device for VR. A user wearing the electronic device 950 The image displayed on the display panel 951 can be viewed through the lens 956. By displaying different images on the pair of display panels 951, a three-dimensional display using parallax can be achieved. It can also be done.

[0296] An input terminal 957 and an output terminal 958 are provided on the rear side of the housing 952. The terminal 957 receives a video signal from a video output device or the like and charges a battery provided in the housing 952. A cable for supplying power for charging the device can be connected to the output terminal 958. For example, it can function as an audio output terminal, allowing you to connect earphones or headphones. It is possible to output audio data via wireless communication or to use an external video When audio is output from the image output device, the audio output terminal does not need to be provided.

[0297] The electronic device 900 has a lens 956 and a display panel 951 that change their position depending on the position of the user's eyes. It is preferable to have a mechanism that allows these left and right positions to be adjusted to the optimum position. In addition, the focus can be adjusted by changing the distance between the lens 956 and the display panel 951. It is preferable that the device has a mechanism for

[0298] The display device of one embodiment of the present invention can be applied to the display panel 951. The electronic device 950 can be made to be capable of displaying images with extremely high definition. This allows the user to feel a high level of immersion.

[0299] The cushioning member 955 is the part that comes into contact with the user's face (forehead, cheeks, etc.). By fitting the device in close contact with the user's face, light leakage can be prevented, enhancing the sense of immersion. The cushioning member 955 is designed to cushion the user's face when the user wears the electronic device 950. It is preferable to use a soft material so that it can adhere to the surface. For example, rubber, silicone rubber, Materials such as urethane and sponge can be used. If you use a sponge or other material covered with cloth or leather (natural or synthetic leather), This makes it difficult for a gap to form between the user's face and the cushioning member 955, thereby effectively preventing light leakage. The members that come into contact with the user's skin, such as the cushioning member 955 and the attachment part 954, are detachable. This is preferable because it facilitates cleaning and replacement.

[0300] The electronic device 6500 shown in FIG. 13A is a mobile phone that can be used as a smartphone. It is an information terminal.

[0301] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, and a button 65 04, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display unit 6502 has a touch panel function.

[0302] The display device of one embodiment of the present invention can be applied to the display portion 6502.

[0303] FIG. 13B is a schematic cross-sectional view including the end portion of the housing 6501 on the microphone 6506 side.

[0304] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501. A display panel 6511, an optical member 6512, a touch panel 6513, and a protective member 6510 are arranged in a space surrounded by the display panel 6511, the optical member 6512, and a touch panel 6513. The sensor panel 6513, printed circuit board 6517, battery 6518, etc. are arranged. .

[0305] The protective member 6510 includes a display panel 6511, an optical member 6512, and a touch sensor panel. The cable 6513 is fixed by an adhesive layer (not shown).

[0306] In the area outside the display portion 6502, a part of the display panel 6511 is folded back. The FPC6515 is connected to the folded part. C6516 is mounted on the FPC6515. connected to a child.

[0307] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, extremely lightweight electronic devices can be realized. Because it is thin, it is possible to install a large-capacity battery 6518 while keeping the thickness of the electronic device small. In addition, a part of the display panel 6511 is folded back and the FPC 6515 is attached to the back of the pixel area. By arranging the connection portion, an electronic device with a narrow frame can be realized.

[0308] FIG. 14A shows an example of a television device. The television device 7100 includes a housing 71 The display unit 7000 is built into the housing 71. This shows a configuration that supports 01.

[0309] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0310] The television device 7100 shown in FIG. 14A is operated by an operation switch provided in the housing 7101. This can be done by a separate remote control 7111 or the display unit 700. The display unit 7000 may be provided with a touch sensor, and the television can be operated by touching the display unit 7000 with a finger or the like. The remote control operator 7111 may operate the remote control operator 7100. The remote control device 7111 may have a display unit that displays information output from the remote control device 7111. The channel and volume can be controlled using the operation keys or touch panel. , the image displayed on the display unit 7000 can be manipulated.

[0311] The television device 7100 includes a receiver, a modem, and the like. It is also possible to receive general television broadcasts via wired or wireless connection via a modem. By connecting to a wired communication network, it can be transmitted in one direction (sender to receiver) or two directions. It is also possible to communicate information in two directions (between a sender and a receiver, or between receivers). do.

[0312] FIG. 14(B) shows an example of a notebook personal computer. The computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, and a 213, an external connection port 7214, etc. The display unit 7000 is incorporated in the housing 7211. It is being eaten.

[0313] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0314] 14(C) and 14(D) show examples of digital signage.

[0315] The digital signage 7300 shown in FIG. 14C includes a housing 7301, a display unit 7000, and and a speaker 7303. In addition, LED lamps, operation keys (power switch, It may have a control switch, connection terminals, various sensors, a microphone, etc. do.

[0316] FIG. 14(D) shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 is a display unit 7000 provided along the curved surface of a pillar 7401. It has.

[0317] 14C and 14D, the display device of one embodiment of the present invention is used in the display portion 7000. can be applied.

[0318] The larger the display unit 7000, the more information can be displayed at once. The wider the part 7000, the more noticeable it is, and for example, the more effective the advertisement. Cut.

[0319] By applying a touch panel to the display unit 7000, images or videos can be displayed on the display unit 7000. It is also preferable because it not only shows route information but also allows users to operate it intuitively. Or when used to provide information such as traffic information, intuitive operation is required. This can improve usability.

[0320] Also, as shown in FIG. 14(C) and FIG. 14(D), a digital signage 7300 or Digital Signage 7400 is an information terminal device 731 such as a smartphone that a user has. 1 or information terminal 7411 via wireless communication. The advertisement information displayed on the display unit 7000 is transmitted to the information terminal 7311 or the information terminal 741. 1. Also, the information terminal 7311 or the information terminal 741 By operating 1, the display on the display unit 7000 can be switched.

[0321] In addition, the digital signage 7300 or the digital signage 7400 is equipped with an information terminal 7 311 or the screen of the information terminal 7411 is used as a control means (controller) to play games. This allows an unspecified number of users to participate in the game at the same time and have fun. It can be done.

[0322] The electronic device shown in FIGS. 15A to 15F includes a housing 9000, a display portion 9001, a speaker 9002, and a touch panel 9003. 9003, operation keys 9005 (including the power switch or operation switch), connection terminal Child 9006, sensor 9007 (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, Light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, (including the ability to measure flow, humidity, gradient, vibration, odor or infrared), It has models such as 9008.

[0323] The electronic devices shown in FIGS. 15A to 15F have various functions. Functions for displaying information (still images, videos, text images, etc.) on the display, touch panel function, Functions that display calendars, dates, or times, etc., and various software (programs) Therefore, the function of controlling the processing, the wireless communication function, the program recorded on the recording medium, or The electronic device can have the function of reading and processing data. The electronic device may have a variety of functions, but is not limited to these. Also, a camera or the like may be provided in the electronic device to take still images or videos and store them on a recording medium (external or built into the camera), and the function of displaying the captured image on the display unit. It may be possible.

[0324] The electronic devices shown in FIGS. 15A to 15F will be described in detail below.

[0325] 15A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 includes: For example, it can be used as a smartphone. A portable information terminal 9003, a connection terminal 9006, a sensor 9007, etc. may be provided. The terminal 9101 can display text and image information on multiple surfaces. 9 shows an example in which three icons 9050 are displayed. 51 can also be displayed on another surface of the display unit 9001. An example of the information 9051 is Notifications of incoming emails, SNS messages, phone calls, etc., email and SNS subject lines, sender names , date and time, remaining battery power, antenna reception strength, etc. An icon 9050 or the like may be displayed in the position where is displayed.

[0326] 15B is a perspective view showing a mobile information terminal 9102. The mobile information terminal 9102 includes: The display unit 9001 has a function of displaying information on three or more surfaces. 9 shows an example in which information 9053 and information 9054 are displayed on different surfaces. The user holds the mobile information terminal 9102 in the breast pocket of his / her clothes. The user can also check the information 9053 displayed in a position that can be observed from above. The user can check the display without taking the mobile information terminal 9102 out of his pocket, and can make a call, for example. You can decide whether or not to receive it.

[0327] FIG. 15C is a perspective view showing a wristwatch-type mobile information terminal 9200. The display unit 9001 can be used as a smart watch, for example. The display surface is curved, and the display can be performed along the curved display surface. The portable information terminal 9200 can communicate with, for example, a wireless headset. The mobile information terminal 9200 also has a connection terminal 9006 allows data transmission between other information terminals and charging. Charging may be performed by wireless power supply.

[0328] 15(D) to 15(F) are perspective views showing a foldable portable information terminal 9201. 15(D) shows the portable information terminal 9201 in an unfolded state, and FIG. 15(F) shows the portable information terminal 9201 in a folded state. Figure 15(E) shows the state where the two are changing from one to the other, Figure 15(D) and Figure 15(F). The portable information terminal 9201 is highly portable when folded and can be easily carried when unfolded. When the display is turned on, the seamless, wide display area provides excellent visibility of the display. The display unit 9001 of the display device 01 is made up of three housings 9000 connected by hinges 9055. For example, the display unit 9001 has a curvature radius of 0.1 mm or more and 150 mm or less. It can be bent with.

[0329] This embodiment mode can be combined with other embodiment modes and examples as appropriate. [Explanation of symbols]

[0330] C1: Capacitor element, GL1: Scan line, GL2: Scan line, SW21: Switch, SW22: Switch switch, 100A: display device, 100B: display device, 100C: display device, 100D: display Display device, 100E: Display device, 100F: Display device, 101: Substrate, 102: Protective layer, 1 10a: light-emitting diode, 110b: light-emitting diode, 112a: electrode, 112b: electrode , 113a: semiconductor layer, 113b: semiconductor layer, 114a: light emitting layer, 114b: light emitting layer, 1 15a: semiconductor layer, 115b: semiconductor layer, 116a: electrode, 116b: electrode, 117a: conductor, 117b: conductor, 117c: conductor, 117d: conductor, 120a: transition 120b: transistor, 130a: transistor, 130b: transistor, 1 31: substrate, 132: element isolation layer, 133: low resistance region, 134: insulating layer, 135: conductive layer layer, 136: insulating layer, 137: conductive layer, 138: conductive layer, 139: insulating layer, 141: insulating layer, 142: conductive layer, 143: insulating layer, 150A: LED substrate, 150B: circuit board, 1 51: substrate, 152: insulating layer, 161: conductive layer, 162: insulating layer, 163: insulating layer, 16 4: insulating layer, 165: metal oxide layer, 166: conductive layer, 167: insulating layer, 168: conductive layer , 171: substrate, 172: wiring, 173: insulating layer, 174: electrode, 175: conductive layer, 17 6: connector, 177: electrode, 178: electrode, 179: adhesive layer, 181: insulating layer, 182: Insulating layer, 183: insulating layer, 184a: conductive layer, 184b: conductive layer, 185: insulating layer, 18 6: insulating layer, 187: conductive layer, 187a: conductive layer, 187b: conductive layer, 188: insulating layer, 189: Conductive layer, 189a: Conductive layer, 189b: Conductive layer, 190a: Conductive layer, 190b: Conductive layer, 190c: conductive layer, 190d: conductive layer, 190e: conductive layer, 191: substrate, 19 2: adhesive layer, 195: conductor, 200: pixel, 210: light-emitting element, 300: transistor , 300A: transistor, 305: conductive layer, 314: insulating layer, 316: insulating layer, 322 : insulating layer, 324: insulating layer, 330: oxide layer, 330a: oxide layer, 330b: oxide layer, 330c: oxide layer, 340: conductive layer, 340a: conductive layer, 340b: conductive layer, 34 1: insulating layer, 341a: insulating layer, 341b: insulating layer, 342: conductive layer, 342a: conductive layer , 342b: conductive layer, 350: insulating layer, 354: insulating layer, 360: conductive layer, 360a: conductive 360b: conductive layer, 374: insulating layer, 380: insulating layer, 381: insulating layer, 900: Electronic device, 901: display panel, 902: housing, 903: optical member, 904: mounting part, 9 05: Camera, 906: Display area, 911: Lens, 912: Reflector, 913: Reflective surface, 915: Light, 916: Transmitted light, 950: Electronic device, 951: Display panel, 952: Housing, 954: Mounting part, 955: Cushioning material, 956: Lens, 957: Input terminal, 958: Output Terminal, 6500: Electronic equipment, 6501: Housing, 6502: Display, 6503: Power button ,6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 65 08: Light source, 6510: Protective member, 6511: Display panel, 6512: Optical member, 651 3: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board 6518: Battery, 7000: Display unit, 7100: Television device, 7101: Case Body, 7103: Stand, 7111: Remote control unit, 7200: Notebook personal computer Computer, 7211: Housing, 7212: Keyboard, 7213: Pointing device 7214: External connection port, 7300: Digital signage, 7301: Housing, 73 03: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar ,7411: Information terminal, 9000: Housing, 9001: Display unit, 9003: Speaker, 9 005: Operation keys, 9006: Connection terminal, 9007: Sensor, 9008: Microphone ,9050:Icon,9051:Information,9052:Information,9053:Information,9054: Information, 9055: Hinge, 9101: Personal digital assistant, 9102: Personal digital assistant, 9200 :Mobile information terminal, 9201:Mobile information terminal

Claims

[Claim 1] a substrate, an insulating layer, a plurality of transistors, and a plurality of light emitting diodes; the plurality of light-emitting diodes are provided in a matrix on the substrate, each of the plurality of transistors is electrically connected to at least one of the plurality of light emitting diodes; the plurality of light-emitting diodes are located closer to the substrate than the plurality of transistors, the plurality of light-emitting diodes emit light toward the substrate; each of the plurality of transistors includes a metal oxide layer having a channel formation region and a gate electrode; a height of an upper surface of the gate electrode substantially coincides with a height of an upper surface of the insulating layer;

Images