Vapor deposition apparatus

The deposition apparatus addresses non-uniform deposition issues by adjusting nozzle distances and angles, along with tailored opening designs, achieving improved uniformity and efficiency in material distribution on substrates.

JP2025116193AInactive Publication Date: 2025-08-07SAMSUNG DISPLAY CO LTD
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Patent Information

Application Number
JP2025092973
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2019-09-03
Filing Date
2025-06-03
Publication Date
2025-08-07
Estimated Expiration
Not applicable · inactive patent

AI Technical Summary

Technical Problem

Existing deposition apparatuses face challenges in achieving uniform deposition of materials on substrates, leading to inefficiencies and non-uniform layer formation.

Method used

The apparatus includes a chamber with a crucible covered by a cover portion featuring nozzles arranged along a specific direction, where the distance and inclination angles of the nozzles are adjusted, and the nozzle openings are designed with varying diameters and shapes to enhance uniformity and linearity of the deposition process.

Benefits of technology

This design improves the uniformity and efficiency of material deposition, reducing shadow areas and enhancing material utilization by minimizing deposition on angle limiting members, resulting in a more uniform layer thickness on the target substrate.

✦ Generated by Eureka AI based on patent content.

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Abstract

To provide a vapor deposition apparatus capable of improving uniformity of vapor deposition.SOLUTION: A display device includes a chamber, a crucible arranged inside the chamber, a cover part for covering the crucible, and 2n nozzles (n is a positive integer) projecting from the cover part, and arrayed along a first direction, in which a distance between an n-th nozzle and a (n+1)-th nozzle is larger than a distance between a (2n-1)-th nozzle and a 2n-th nozzle.SELECTED DRAWING: Figure 6
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Description

[Technical Field]

[0001] The present invention relates to a deposition apparatus, and more particularly to a deposition apparatus with improved deposition uniformity. [Background technology]

[0002] The display device includes a plurality of pixels, each of which includes a light-emitting layer disposed between opposing electrodes. The electrodes and light-emitting layers can be formed by various methods, including vacuum deposition, in which a predetermined material is deposited in a vacuum to form a thin film. The vacuum deposition method involves disposing a mask assembly between a source unit and a target substrate in a chamber, and sublimating or vaporizing the material from the source unit to deposit it on the target substrate. Summary of the Invention [Problem to be solved by the invention]

[0003] SUMMARY OF THE INVENTION An object of the present invention is to provide a deposition apparatus that improves the uniformity of deposition. [Means for solving the problem]

[0004] A deposition apparatus according to one embodiment of the present invention includes a chamber, a crucible disposed inside the chamber, a cover portion covering the crucible, and 2n (n is a positive integer) nozzles protruding from the cover portion and arranged along a first direction, wherein the distance between the nth nozzle and the n+1th nozzle is greater than the distance between the 2n-1th nozzle and the 2nth nozzle.

[0005] Each of the nozzles includes an inlet defined on the same plane as the underside of the cover portion, an outlet facing the inlet, and an opening connecting the inlet and the outlet, and the area of the outlet is larger than the area of the inlet.

[0006] The opening includes a first opening extending from the inlet along a predetermined extension direction, and a second opening extending from the first opening toward the outlet along the extension direction, wherein a first diameter of the first opening in a direction perpendicular to the extension direction is constant, and a second diameter of the second opening in a direction perpendicular to the extension direction gradually increases toward the outlet.

[0007] A first length that is the maximum length of the first opening in the extension direction is the same as a second length of the second opening in the extension direction.

[0008] The first length and the second length are each 16 mm.

[0009] The second diameter has a maximum diameter that is 2.3 times the first diameter.

[0010] The first diameter is 9.5 mm and the second diameter has a maximum diameter of 22 mm.

[0011] The cover portion includes an upper surface parallel to the first direction and a second direction intersecting the second direction, and each of the 2n nozzles is inclined with respect to a third direction perpendicular to the upper surface.

[0012] A first angle between a line parallel to the third direction and the (n+1)th nozzle is smaller than a second angle between a line parallel to the third direction and the 2nth nozzle.

[0013] The first angle is 5 degrees and the second angle is 20 degrees.

[0014] The 2n nozzles include a first nozzle inclined at a first angle with respect to a vertical line perpendicular to the upper surface of the cover portion, a second nozzle inclined at a second angle with respect to the vertical line that is greater than the first angle, a third nozzle inclined at a third angle with respect to the vertical line that is greater than the second angle, a fourth nozzle inclined at a fourth angle with respect to the vertical line that is greater than the third angle, and a fifth nozzle inclined at a fifth angle with respect to the vertical line that is greater than the fourth angle.

[0015] The number of the fifth nozzles is greater than the number of the first nozzles, the number of the second nozzles, the number of the third nozzles, and the number of the fourth nozzles.

[0016] The number of the third nozzles is greater than the number of the first nozzles, the number of the second nozzles, and the number of the fourth nozzles, and is less than the number of the fifth nozzles.

[0017] Of the distances between two adjacent nozzles among the nozzles, the distance between the fourth nozzles is the longest.

[0018] The first nozzle, the second nozzle, the third nozzle, the fourth nozzle, and the fifth nozzle are arranged in order in a direction away from the center of the cover portion, the nth nozzle and the n+1th nozzle are the first nozzle, and the 2n-1th nozzle and the 2nth nozzle are the fifth nozzle.

[0019] The nozzle further includes angle limiting portions extending along the first direction and spaced apart from each other with the nozzle therebetween.

[0020] According to one embodiment of the present invention, there is provided a deposition apparatus including a chamber, a crucible disposed inside the chamber, a cover portion covering the crucible and including an upper surface parallel to a first direction and a second direction intersecting the first direction, and a plurality of nozzles protruding from the cover portion and arranged along the first direction, wherein a distance between two adjacent nozzles among the plurality of nozzles varies depending on a position, and all of the plurality of nozzles are inclined with respect to a third direction perpendicular to the upper surface.

[0021] The number of the nozzles is 2n (n is a positive integer), and the distance between the nth nozzle and the n+1th nozzle located at the center of the cover part is greater than the distance between the 2n-1th nozzle and the 2nth nozzle located at the outer periphery of the cover part.

[0022] A first angle between a line parallel to the third direction and the (n+1)th nozzle is smaller than a second angle between a line parallel to the third direction and the 2nth nozzle.

[0023] Each of the plurality of nozzles includes an inlet defined on the same plane as the lower surface of the cover portion, an outlet facing the inlet and having an area larger than that of the inlet, and an opening connecting the inlet and the outlet, the opening including a first opening extending from the inlet along a predetermined extension direction, and a second opening extending from the first opening toward the outlet along the extension direction, the first diameter of the first opening in a direction perpendicular to the extension direction being constant, and the second diameter of the second opening in a direction perpendicular to the extension direction being gradually larger as it approaches the outlet. [Effects of the Invention]

[0024] According to one embodiment of the present invention, the distance between nozzles and the inclination angle of each nozzle are adjusted to uniformly deposit the deposition material, and the shape of the opening defined inside the nozzle is adjusted to improve the linearity of the deposition material emitted from the source. [Brief explanation of the drawings]

[0025] [Figure 1] 1 is a cross-sectional view of a deposition apparatus according to an embodiment of the present invention. [Figure 2] 1 is a cross-sectional view of a nozzle according to one embodiment of the present invention. [Figure 3] FIG. 10 is a cross-sectional view of a nozzle according to a comparative example of the present invention. [Figure 4] FIG. 10 shows the deposition profile of a layer deposited by a nozzle. [Figure 5] FIG. 2 is a perspective view showing a source unit according to an embodiment of the present invention. [Figure 6] FIG. 6 is a cross-sectional view taken along line II' in FIG. 5. [Figure 7] FIG. 6 is a cross-sectional view of the source portion shown in FIG. 5. [Figure 8] FIG. 6 is a cross-sectional view of the source portion shown in FIG. 5. [Figure 9] 1 is a cross-sectional view of a target substrate according to one embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0026] As used herein, when a component (or region, layer, portion, etc.) is referred to as being "on" or "coupled" to another component, it means that it may be directly disposed on, connected to, or coupled to the other component, or that a third component may be disposed therebetween.

[0027] The same reference numerals refer to the same components, and in the drawings, thickness, proportions, and dimensions of the components are exaggerated for the purpose of effectively explaining the technical contents.

[0028] "And / or" includes all combinations of one or more of the associated constructs.

[0029] Terms such as "first," "second," etc. are used to describe various components, but the components are not limited to those terms. These terms are used only to distinguish one structural element from another. For example, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element, without departing from the scope of the present invention. The singular term "a" includes the plural term unless the context clearly dictates otherwise.

[0030] Furthermore, terms such as "under," "below," "on," and "above" are used to describe the relationship between components shown in the drawings. These terms are relative concepts and are described based on the directions shown in the drawings.

[0031] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Furthermore, terms such as those defined in commonly used dictionaries should be interpreted to have a meaning consistent with the meaning in the context of the relevant art, and are expressly defined herein unless interpreted in an idealized or overly formal sense.

[0032] It should be understood that the terms "comprise" or "have" and the like specify the presence of any feature, numeral, step, operation, component, part, or combination thereof set forth above in the specification, but do not preclude the possible presence or addition of one or more other features, numerals, steps, operations, components, parts, or combinations thereof.

[0033] Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

[0034] FIG. 1 is a cross-sectional view of a deposition apparatus according to an embodiment of the present invention.

[0035] Referring to FIG. 1, a deposition apparatus 1000 includes a chamber 100 , a source unit 200 , a mask assembly 300 , and a moving plate 400 .

[0036] The chamber 100 provides a sealed space. The source unit 200, the mask assembly 300, and the moving plate 400 are disposed within the chamber 100. The chamber 100 includes at least one gate 100-G. The gate 100-G opens and closes the chamber 100. The target substrate SUB enters and exits the chamber 100 through the gate 100-G.

[0037] The source part 200 is arranged to be capable of linear movement within the chamber 100. When the source part 200 moves linearly, a linear driving part (not shown) for linearly moving the source part 200 is further arranged in the chamber 100. For example, the linear driving part includes a linear motor or a cylinder connected to the source part 200.

[0038] The source section 200 includes a crucible 210 , a cover section 220 , a plurality of nozzles 230 (hereinafter, referred to as nozzles), an angle limiting member 240 , a first inner plate 250 , and a second inner plate 260 .

[0039] The crucible 210 contains a deposition material. The deposition material is a sublimable or vaporizable material, and includes one of an inorganic material, a metal, and an organic material. For example, the deposition material includes an organic material for forming an organic light emitting device.

[0040] The cover part 220 covers the crucible 210. For example, the cover part 220 covers the open top of the crucible 210. The cover part 220 includes an upper surface 221 and a lower surface 222 that are parallel to a first direction DR1 and a second direction DR2 that intersects with the first direction DR1. The upper surface 221 and the lower surface 222 are surfaces that face each other.

[0041] The nozzles 230 protrude from the cover part 220 and are arranged along a first direction DR1. For example, the nozzles 230 protrude from the upper surface 221 of the cover part 220 in a direction away from the crucible 220. The nozzles 230 and the cover part 220 have an integral shape. The deposition material contained in the crucible 210 is discharged to the outside through the nozzles 230.

[0042] The number of nozzles 230 is 2n, where n is a positive integer. An even number of nozzles 230 are provided. Although FIG. 1 illustrates an example of 30 nozzles 230, the present invention is not limited thereto. For example, the number of nozzles 230 may be less than 30 or more than 30.

[0043] The angle limiting member 240 is provided adjacent to the nozzle 230. The angle limiting member 240 serves to limit the emission path of the deposition material. For example, if the nozzles 230 are arranged along the first direction DR1, the angle limiting member 240 extends along the first direction DR1. In one embodiment of the present invention, the angle limiting member 240 may be omitted.

[0044] The first inner plate 250 and the second inner plate 260 are disposed inside the crucible 210. The first inner plate 250 is disposed between the cover 220 and the second inner plate 260. The first inner plate 250 and the second inner plate 260 prevent the deposition material from being pumped and overflowing. In addition, the first inner plate 250 and the second inner plate 260 serve to block material falling toward the bottom of the crucible 210 through the nozzle 230.

[0045] The stage 301 is disposed above the source section 200. The mask assembly 300 is disposed above the stage 301. The mask assembly 300 faces the source section 200.

[0046] The mask assembly 300 includes a frame 310 , supports 321 and 322 , and a mask 330 .

[0047] Frame 310 has an annular shape on a plane. That is, an opening 310-O is provided in an area including the center of frame 310. Opening 310-O is a hole that penetrates from the upper surface of frame 310 to the lower surface of frame 310.

[0048] The support portions 321 and 322 are disposed on the frame 310. The support portions 321 and 322 are disposed so as to overlap at least a portion of the opening 310-O of the frame 310. The support portions 321 and 322 divide the opening 310-O into a plurality of regions. The support portions 321 and 322 include a first support portion 321 and a second support portion 322. The first support portion 321 extends along a first direction DR1. The second support portion 322 extends along a second direction DR2.

[0049] The first support portion 321 and the second support portion 322 are coupled to the frame 310. For example, the first support portion 321 and the second support portion 322 are coupled to the frame 310 by welding. However, this is merely an example, and the first support portion 321 and the second support portion 322 may be coupled to the frame 310 by a coupling member (not shown), which may be an adhesive material. In another embodiment, a groove (not shown) recessed from the upper surface of the frame 310 is provided, and the first support portion 321 and the second support portion 322 are inserted into the groove to be fitted and coupled to the frame 310. In one embodiment of the present invention, at least one of the first support portion 321 and the second support portion 322 may be omitted.

[0050] The mask 330 is disposed on the first support portion 321 and the second support portion 322. A single mask 330 may be provided, or multiple masks 330 may be provided. A plurality of opening patterns 330-O are defined in the mask 330. The multiple opening patterns 330-O do not overlap the first and second support portions 321 and 322 on a plane, but overlap the openings 310-O. The opening patterns 330-O are through-holes that penetrate from the upper surface of the mask 330 to the lower surface of the mask 330.

[0051] The mask 330 is connected to the first and second support parts 321 and 322. For example, the mask 330 is connected to the first and second support parts 321 and 322 by welding. However, this is merely an example, and the mask 330 and the first and second support parts 321 and 322 may be connected to each other by a connecting member, for example, an adhesive or a pressure sensitive adhesive.

[0052] The moving plate 400 aligns the target substrate SUB above the mask assembly 300. Illustratively, the moving plate 400 generates an electrostatic force or a magnetic force to hold the target substrate SUB and move the target substrate SUB above the mask assembly 300. The moving plate 400 can move up and down or left and right.

[0053] 2 is a cross-sectional view of a nozzle according to an embodiment of the present invention, exemplarily illustrating a nozzle 230-R extending in a third direction DR3 perpendicular to an upper surface 221 (see FIG. 1) of a cover part 220 (see FIG. 1).

[0054] 1 and 2, the nozzle 230-R includes an inlet 230-I, a discharge port 230-O, and an opening 230-OP. The inlet 230-I is defined on the same plane as the lower surface 222 of the cover portion 220. The discharge port 230-O faces the inlet 230-I. The opening 230-OP connects the inlet 230-I and the discharge port 230-O. The deposition material is discharged to the outside through the inlet 230-I, the opening 230-OP, and the discharge port 230-O.

[0055] The area of the outlet 230-O is larger than the area of the inlet 230-I. For example, the diameter WT1 of the inlet 230-I is smaller than the diameter WT2 of the outlet 230-O. For example, the diameter WT1 of the inlet 230-I and the diameter WT2 of the outlet 230-O have a ratio of 1:2.3. For example, if the diameter WT1 of the inlet 230-I is 9.5 mm, the diameter WT of the outlet 230-O is 22 mm.

[0056] The opening 230-OP includes a first opening OP1 and a second opening OP2. The first opening OP1 extends from the inlet 230-I along a predetermined extension direction. In the nozzle 230-R shown in FIG. 2, the extension direction is the third direction DR3. The second opening OP2 extends from the first opening OP1 toward the outlet 230-O along the extension direction.

[0057] In plan view (viewed from above in FIG. 2), the first opening OP1 and the second opening OP2 each have a circular shape. The first diameter WTa of the first opening OP1 is constant. The second diameter WTb of the second opening OP2 gradually increases toward the discharge port 230-O. The maximum diameter of the second diameter WTb corresponds to the diameter WT2 of the discharge port 230-O. The first diameter WTa and the second diameter WTb are diameters in a direction perpendicular to the extension direction. For example, in FIG. 2, the first diameter WTa and the second diameter WTb are diameters in the first direction DR1.

[0058] The first length LT1 of the first opening OP1 and the second length LT2 of the second opening OP2 are the same. For example, the first length LT1 and the second length LT2 are lengths in the extension direction. The first length LT1 and the second length LT2 are 16 mm.

[0059] The second opening OP2 has an inclination angle AG of 68.85 degrees. The inclination angle AG is the angle between the direction perpendicular to the extension direction and the sidewall that defines the second opening OP2. In FIG. 2, the inclination angle AG is defined as the angle between the first direction DR1 and the sidewall SW that defines the second opening OP2.

[0060] FIG. 3 is a cross-sectional view of a nozzle according to a comparative example of the present invention.

[0061] Referring to FIG. 3, a nozzle 230-C according to a comparative example of the present invention is illustrated. The nozzle 230-C includes an inlet 230-CI, an outlet 230-CO, and an opening OP-C. In a plan view (viewed from above in FIG. 3), the areas of the inlet 230-CI and the outlet 230-CO are the same. For example, the diameter WT1-C of the inlet 230-CI is the same as the diameter WT2-C of the outlet 230-CO. The diameter of the opening OP-C is also constant. For example, the diameter WT1-C of the inlet 230-CI and the diameter WT2-C of the outlet 230-CO are 11.4 mm, and the length LT-C of the opening OP-C is 32 mm.

[0062] FIG. 4 shows the deposition profile of the layer deposited by the nozzle.

[0063] Referring to Figure 4, a first profile PF shows the deposition profile of a layer deposited by nozzle 230-R shown in Figure 2, and a second profile PF-C shows the deposition profile of a layer deposited by nozzle 230-C shown in Figure 3.

[0064] The positions of the nozzles 230-R and 230-C correspond to the position 0. The first area AA is defined as an effective area, and the second area BB is defined as a non-effective area. For example, the deposition material provided to the second area BB adheres to the angle limiting member 240 (see FIG. 1). The amount of deposition material provided to the second area BB is greater for the layer deposited by the nozzle 230-C than for the layer deposited by the nozzle 230-R.

[0065] According to an embodiment of the present invention, the nozzle 230 shown in Fig. 1 is provided with openings having a shape similar to the openings 230-OP shown in Fig. 2. Therefore, the amount of deposition material deposited by the angle limiting member 240 (see Fig. 1) is reduced, improving the efficiency of material use.

[0066] FIG. 5 is a perspective view showing a source unit according to an embodiment of the present invention.

[0067] 5, the 2n nozzles 230 are arranged along a first direction DR1. The 1st nozzle 230-1 to the 2nth nozzle 230-2n are arranged in order along the first direction DR1. The nth nozzle 230-n and the (n+1)th nozzle 230-n+1 are disposed in the central region of the cover portion 220. The 1st nozzle 230-1 to the nth nozzle 230-n have a symmetrical structure to the (n+1)th nozzle 230-n+1 to the 2nth nozzle 230-2n.

[0068] The angle limiting member 240 includes a first angle limiting member 241 and a second angle limiting member 242. The first angle limiting member 241 and the second angle limiting member 242 each extend along a first direction DR1. The first angle limiting member 241 and the second angle limiting member 242 are spaced apart in a second direction DR2. A nozzle 230 is disposed between the first angle limiting member 241 and the second angle limiting member 242.

[0069] The deposition material provided in the second region BB (see FIG. 4) is attached to the first angle limiting member 241 and the second angle limiting member 242. The first angle limiting member 241 and the second angle limiting member 242 adjust the emission angle of the deposition material.

[0070] FIG. 6 is a cross-sectional view taken along line II' in FIG.

[0071] 6, the nth nozzle 230-n and the 2nth nozzle 230-2n are illustrated. The nth nozzle 230-n and the (n+1)th nozzle 230-n+1 are symmetrical with respect to an axis of symmetry AS. The axis of symmetry AS passes through the center CP of the cover part 220 and extends along the third direction DR3. The 1st nozzle 230-1 (see FIG. 5) and the 2nth nozzle 230-2n are symmetrical with respect to an axis of symmetry AS.

[0072] The nozzles 230 include a first nozzle 231, a second nozzle 232, a third nozzle 233, a fourth nozzle 234, and a fifth nozzle 235. The first nozzle 231, the second nozzle 232, the third nozzle 233, the fourth nozzle 234, and the fifth nozzle 235 are arranged in order in a direction away from the center CP of the cover part 220. For example, the nth nozzle 230-n and the n+1th nozzle 230-n+1 are the first nozzle 231, and the 1st nozzle 230-1 (see FIG. 5) and the 2nth nozzle 230-2n are the fifth nozzle 235.

[0073] The first nozzle 231 is inclined at a first angle AG1 with respect to a vertical line VL perpendicular to the upper surface 221 of the cover part 220. Referring to FIG. 6, the first angle AG may be defined as the angle between the vertical line VL and the outer circumferential surface of the first nozzle 231. The upper surface 221 is parallel to the first direction DR1 and the second direction DR2. Therefore, the vertical line VL is parallel to the third direction DR3. The second nozzle 232 is inclined at a second angle AG2 with respect to the vertical line VL. The third nozzle 233 is inclined at a third angle AG3 with respect to the vertical line VL. The fourth nozzle 234 is inclined at a fourth angle AG4 with respect to the vertical line VL. The fifth nozzle 235 is inclined at a fifth angle AG5 with respect to the vertical line VL.

[0074] The first to fifth angles AG1, AG2, AG3, AG4, and AG5 satisfy the following formula 1.

[0075] First angle AG1 < second angle AG2 < third angle AG3 < fourth angle AG4 < fifth angle AG5 (Equation 1)

[0076] For example, the first angle AG1 is 5 degrees, the second angle AG2 is 8 degrees, the third angle AG3 is 10 degrees, the fourth angle AG4 is 18 degrees, and the fifth angle AG5 is 20 degrees.

[0077] According to one embodiment of the present invention, all of the nozzles 230 are inclined with respect to the vertical line VL. The angles between the vertical line VL and the inclined nozzles 230 are adjusted to improve deposition uniformity. According to one embodiment of the present invention, the first nozzle 231 adjacent to the center CP of the cover part 220 is inclined at the first angle AG1, thereby preventing the deposition material from concentrating on a portion of the target substrate facing the center CP of the cover part 220.

[0078] Of the n+1-th nozzle 230-n+1 to the 2n-th nozzle 230-2n, in order from the direction away from the center CP, one nozzle is a first nozzle 231, one nozzle is a second nozzle 232, four nozzles are third nozzles 233, two nozzles are fourth nozzles 234, and seven nozzles are fifth nozzles 235. Since the nozzles 230 have a symmetrical structure with respect to the center CP of the cover part 220, of the 2n nozzles 230, there are two first nozzles 231, two second nozzles 232, eight third nozzles 233, four fourth nozzles 234, and 14 fifth nozzles 235.

[0079] The numbers of the first to fifth nozzles 231, 232, 233, 234, and 235 respectively satisfy the following formula 2.

[0080] Number of first nozzles 231=Number of second nozzles 232<Number of fourth nozzles 234<Number of third nozzles 233<Number of fifth nozzles 235 (Equation 2)

[0081] The distance between two adjacent nozzles of the nozzles 230 may vary depending on the nozzle position. Figure 6 shows the center-to-center spacing PCA and first to fourteenth spacings PC1, PC2, PC3, PC4, PC5, PC6, PC7, PC8, PC9, PC10, PC11, PC12, PC13, and PC14.

[0082] The center-to-center spacing PCA is the distance between the nth nozzle 230-n and the n+1th nozzle 230-n+1. The fourteenth spacing PC14 is the distance between the 2n-1th nozzle 230-2n-1 and the 2nth nozzle 230-2n. The center-to-center spacing PCA is greater than the fourteenth spacing PC14.

[0083] According to one embodiment of the present invention, the distance between the nozzles arranged in the central region of the cover part 220 is wider than the distance between the nozzles arranged in the outer region of the cover part 220, thereby improving the uniformity of the thickness of the deposition material deposited on the target substrate.

[0084] A midpoint CPk between the n+1-th nozzle 230-n+1 and the 2n-th nozzle 230-2n is located between the fourth nozzles 234. In one embodiment of the present invention, the seventh interval PC7 between the fourth nozzles 234 has the largest value among the center-to-center interval PCA and the first to fourteenth intervals PC1, PC2, PC3, PC4, PC5, PC6, PC7, PC8, PC9, PC10, PC11, PC12, PC13, and PC14. In other words, in relation to the entire nozzle 230, the distance between two nozzles facing each other across the ¼ and ¾ points of the distance between the first nozzle 230-1 and the 2n-th nozzle 230-2n has the largest interval.

[0085] The center spacing PCA is 56 mm, the first spacing PC1 is 36 mm, the second spacing PC2 is 31 mm, the third spacing PC3 is 31 mm, the fourth spacing PC4 is 29 mm, the fifth spacing PC5 is 28 mm, the sixth spacing PC6 is 39 mm, the seventh spacing PC7 is 60 mm, the eighth spacing PC8 is 50 mm, the ninth spacing PC9 is 43 mm, the tenth spacing PC10 is 36 mm, and the eleventh to fourteenth spacings PC11, PC12, PC13, and PC14 are each 26 mm.

[0086] According to one embodiment of the present invention, the distance between the nozzles 230 and the inclination angle of each nozzle 230 are adjusted to achieve uniform deposition of the deposition material. The shape of the opening 230-OP (see FIG. 2) inside the nozzle 230 is also adjusted to improve the linearity of the deposition material emitted from the source unit 200 (see FIG. 1). The improved linearity reduces shadow areas of the layer deposited on the target substrate, and also reduces the amount of deposition material deposited by the angle limiting member 240 (see FIG. 5), improving material utilization efficiency.

[0087] Fig. 7 is a cross-sectional view of the source part shown in Fig. 5. Fig. 8 is a cross-sectional view of the source part shown in Fig. 5. Fig. 7 is a cross-sectional view showing a partial region of the source part 200 in a cross section parallel to the first direction DR1 and the third direction DR3, and Fig. 8 is a cross-sectional view showing a partial region of the source part 200 in a cross section parallel to the second direction DR2 and the third direction DR3. Figs. 7 and 8 will be described based on the first nozzle 231.

[0088] 7 and 8, a first inner plate 250 and a second inner plate 260 are disposed in this order below the opening 230-OP of the first nozzle 231.

[0089] A first opening 251 is defined in the first inner plate 250, and a second opening 261 is defined in the second inner plate 260. The first opening 251 and the second opening 261 do not overlap each other in a plan view (when viewed from above in FIGS. 7 and 8). For example, the first opening 251 does not overlap with the nozzle 230, and the second opening 261 overlaps with the nozzle 230.

[0090] The size of the first openings 251 is smaller than the size of the second openings 261. For example, the width of each of the first openings 251 is 2.2 mm, and the width of each of the second openings 261 is 5.0 mm.

[0091] The number of the first openings 251 is greater than the number of the second openings 261. For example, the number of the first openings 251 is twice the number of the nozzles 230 (see FIG. 1), and the number of the second openings 261 is the same as the number of the nozzles 230 (see FIG. 1).

[0092] FIG. 9 is a cross-sectional view of a target substrate according to one embodiment of the present invention.

[0093] 1 and 9, a deposition material is deposited on the target substrate SUB exposed by the opening pattern 330-O of the mask 330. During deposition, the distance between the target substrate SUB and the mask 330 is reduced from the distance shown in FIG. 1. For example, the distance between the mask 330 and the target substrate SUB is reduced to about 3 micrometers.

[0094] The target substrate SUB includes, for example, a base layer BS, first to sixth insulating layers 10, 20, 30, 40, 50, 60, a transistor TR, and a first electrode E1.

[0095] The base layer BS is a plastic substrate, a glass substrate, an insulating film, or a laminated structure including multiple insulating layers.

[0096] The first insulating layer 10 is disposed on the base layer BS. The first insulating layer 10 includes a barrier layer 11 and a buffer layer 12.

[0097] The barrier layer 11 includes an inorganic material. The barrier layer 11 prevents oxygen and moisture that flow in through the base layer BS from penetrating into the pixels. The barrier layer 12 includes an inorganic material. The buffer layer 12 provides the pixels with a lower surface energy than the base layer BS so that the pixels can be stably formed on the base layer BS. In FIG. 9, the barrier layer 11 and the buffer layer 12 are each shown as a single layer. However, this is merely an example, and multiple barrier layers 11 and buffer layers 12 according to an embodiment of the present invention may be provided and stacked alternately. Furthermore, at least one of the barrier layer 11 and the buffer layer 12 may be provided in multiple layers or may be omitted.

[0098] Each pixel includes a pixel circuit and a light emitting element. The pixel circuit includes a transistor TR, a capacitor, etc. Only one transistor TR is shown in FIG.

[0099] A transistor TR is disposed on the first insulating layer 10. The transistor TR includes a semiconductor pattern SM, a control electrode CE, an input power IE, and an output electrode OE. The semiconductor pattern SM is disposed on the first insulating layer 10. The semiconductor pattern SM includes a semiconductor material. The control electrode CE is spaced apart from the semiconductor pattern SM with a second insulating layer 20 sandwiched therebetween.

[0100] The input power IE and the output electrode OE are respectively connected to one side and the other side of the semiconductor pattern SM through the second insulating layer 20, the third insulating layer 30, and the fourth insulating layer 40. The one side of the semiconductor pattern SM connected to the input power IE is the source, and the other side of the semiconductor pattern SM connected to the output electrode OE is the drain. The input power IE and the output electrode OE are each referred to as a connection electrode.

[0101] An upper electrode UE is disposed between the third insulating layer 30 and the fourth insulating layer 40. The upper electrode UE is connected to one electrode of the capacitor.

[0102] A fifth insulating layer 50 is disposed on the fourth insulating layer 40 and covers the input power IE and output electrodes OE.

[0103] The first electrode E1 is disposed on the fifth insulating layer 50. The first electrode E1 passes through the fifth insulating layer 50 and is electrically connected to the transistor TR.

[0104] The sixth insulating layer 60 is disposed on the fifth insulating layer 50. An opening is defined in the sixth insulating layer 60, and the opening exposes at least a portion of the first electrode E1. The sixth insulating layer 60 is a pixel defining film.

[0105] The mask 330 faces the sixth insulating layer 60. The opening pattern 330-O of the mask 330 overlaps the opening of the sixth insulating layer 60 in a plan view (when viewed from above in FIG. 9). The deposition material passes through the opening pattern 330-O of the mask 330 and is formed on the first electrode E1. For example, the light-emitting layer EL is formed on the first electrode E1. This deposition material is a material that constitutes the light-emitting layer EL. In other words, the light-emitting layer EL is a deposition material deposited on the target substrate SUB.

[0106] The light-emitting layer EL includes a light-emitting material. For example, the light-emitting layer EL includes at least one material that emits red, green, or blue light. The light-emitting layer EML includes a fluorescent material or a phosphorescent material. The light-emitting layer EML includes an organic light-emitting material or an inorganic light-emitting material.

[0107] Although the present invention has been described above with reference to preferred embodiments, it should be understood by those skilled in the art or those having ordinary knowledge in the art that various modifications and changes can be made to the present invention without departing from the spirit and technical scope of the present invention as set forth in the claims below. Therefore, the technical scope of the present invention should not be limited to the contents of the detailed description of the specification, but should be determined by the claims.

Claims

1. a chamber; a crucible disposed within the chamber; and a cover portion for covering the crucible; 2n (n is a positive integer) nozzles protruding from the cover portion and arranged along a first direction; Including, A deposition apparatus, wherein the distance between the nth nozzle and the (n+1)th nozzle is greater than the distance between the 2n-1th nozzle and the 2nth nozzle.

2. Each of the nozzles comprises: an inlet defined in the same plane as the lower surface of the cover portion; a discharge port facing the inlet; an opening connecting the inlet and the outlet, The deposition apparatus of claim 1 , wherein the area of the outlet is larger than the area of the inlet.

3. The opening is a first opening extending from the inlet along a predetermined extension direction; a second opening extending from the first opening toward the discharge port along the extension direction; Including, 3. The deposition device of claim 2, wherein a first diameter of the first opening in a direction perpendicular to the extension direction is constant, and a second diameter of the second opening in a direction perpendicular to the extension direction gradually increases toward the discharge port.

4. The deposition device of claim 3 , wherein a first length that is a maximum length of the first opening in the extension direction is equal to a second length of the second opening in the extension direction.

5. The deposition apparatus of claim 4 , wherein the first length and the second length are each 16 mm.

6. The deposition apparatus of claim 3 , wherein the maximum diameter of the second diameter is 2.3 times the maximum diameter of the first diameter.

7. the first diameter is 9.5 mm; The deposition apparatus of claim 3 , wherein the second diameter has a maximum diameter of 22 mm.

8. the cover portion includes an upper surface parallel to the first direction and a second direction intersecting the second direction, The deposition apparatus of claim 1 , wherein each of the 2n nozzles is inclined with respect to a third direction perpendicular to the upper surface.

9. 9. The deposition apparatus of claim 8, wherein a first angle between a line parallel to the third direction and the (n+1)th nozzle is smaller than a second angle between a line parallel to the third direction and the (2n)th nozzle.

10. the first angle is 5 degrees; The deposition apparatus of claim 9 , wherein the second angle is 20 degrees.

11. The 2n nozzles are a first nozzle inclined at a first angle with respect to a vertical line perpendicular to an upper surface of the cover portion; a second nozzle inclined at a second angle relative to the vertical that is greater than the first angle; a third nozzle inclined at a third angle relative to the vertical that is greater than the second angle; a fourth nozzle inclined at a fourth angle relative to the vertical that is greater than the third angle; a fifth nozzle inclined at a fifth angle relative to the vertical that is greater than the fourth angle; The deposition apparatus of claim 1 , comprising:

12. The deposition apparatus of claim 11 , wherein the number of the fifth nozzles is greater than the number of the first nozzles, the number of the second nozzles, the number of the third nozzles, and the number of the fourth nozzles.

13. The deposition apparatus of claim 12 , wherein the number of the third nozzles is greater than the number of the first nozzles, the number of the second nozzles, and the number of the fourth nozzles, and is less than the number of the fifth nozzles.

14. The deposition device of claim 13 , wherein the distance between the fourth nozzle is the longest among the distances between two adjacent nozzles among the nozzles.

15. the first nozzle, the second nozzle, the third nozzle, the fourth nozzle, and the fifth nozzle are arranged in order in a direction away from the center of the cover portion, the nth nozzle and the (n+1)th nozzle are the first nozzles, The deposition apparatus of claim 11 , wherein the (2n−1)th nozzle and the 2nth nozzle are the fifth nozzle.

16. The deposition apparatus of claim 1 , further comprising angle limiting portions extending along the first direction and spaced apart from each other with the nozzle therebetween.

17. a chamber; a crucible disposed within the chamber; and a cover portion that covers the crucible and includes an upper surface that is parallel to a first direction and a second direction that intersects with the first direction; a plurality of nozzles protruding from the cover portion and arranged along a first direction; Including, a distance between two adjacent nozzles among the plurality of nozzles varies depending on a position; The vapor deposition apparatus, wherein the plurality of nozzles are all inclined with respect to a third direction perpendicular to the upper surface.

18. the number of the plurality of nozzles is 2n (n is a positive integer), 18. The deposition apparatus of claim 17, wherein a distance between the nth nozzle and the (n+1)th nozzle disposed at the center of the cover is greater than a distance between the 2n-1th nozzle and the 2nth nozzle disposed at an outer periphery of the cover.

19. 19. The deposition apparatus of claim 18, wherein a first angle between a line parallel to the third direction and the (n+1)th nozzle is smaller than a second angle between a line parallel to the third direction and the (2n)th nozzle.

20. Each of the plurality of nozzles an inlet defined in the same plane as the lower surface of the cover portion; a discharge port facing the inlet and having an area larger than the area of the inlet; an opening connecting the inlet and the outlet; Including, The opening is a first opening extending from the inlet along a predetermined extension direction; a second opening extending from the first opening toward the discharge port along the extension direction; Including, a first diameter of the first opening in a direction perpendicular to the extension direction is constant; The deposition apparatus of claim 17 , wherein the second diameter of the second opening in the direction perpendicular to the extension direction gradually increases toward the discharge port.