Light-emitting device

Abstract

To provide a display device in which a defect of a pixel is not easily recognized.SOLUTION: A display device includes a display part where pixels are arranged in matrix, and a sensor part where a photoelectric conversion element is provided. First, the display part is divided into a first region and a second region. Next, first light is emitted from the pixels included in the first region and the luminance of the first light is detected by the photoelectric conversion element. Moreover, second light is emitted from the pixels included in the second region and the luminance of the second light is detected by the photoelectric conversion element. After that, the luminance of the first light and the luminance of the second light are compared. Based on the result of the comparison, one of the first region and the second region is divided into a third region and a fourth region. By repeating this operation, a defective pixel is detected. Based on the result of the detection of the defective pixel, the luminance represented by the image data can be corrected.SELECTED DRAWING: Figure 45

Description

[Technical Field]

[0001] One embodiment of the present invention relates to a method for operating a display device. Another aspect of the present invention relates to an electronic device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the semiconductor device include a semiconductor device, a display device, a light-emitting device, a display system, an electronic device, a lighting device, an input device, and the like. devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), and their drivers The method or the method for producing the same can be mentioned as an example.

[0003] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. This refers to all types of equipment, including display devices (liquid crystal display devices, light-emitting display devices, etc.), projection devices, lighting devices, and electrical equipment. Optical devices, power storage devices, memory devices, semiconductor circuits, imaging devices, electronic devices, etc. are semiconductor devices. Alternatively, they may be said to have a semiconductor device. [Background technology]

[0004] Augmented reality (AR) or virtual reality (VR) As a display device for Real Reality, wearable display devices and stationary display devices are being developed. Wearable display devices are becoming more and more popular. Examples of wearable display devices include headsets. Head-mounted displays (HMD) and glasses-type Examples of stationary display devices include head-up displays. (HUD: Head-Up Display) and the like. For example, in Patent Document 1, This paper discloses a head-mounted display that can easily capture an image of a user's eyes. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 2019-80354 Summary of the Invention [Problem to be solved by the invention]

[0006] In display devices such as HMDs where the display unit is close to the user, the pixels are easy for the user to see. This can make the image appear grainy, which can reduce the immersive and realistic feel of AR or VR. For this reason, in HMDs, high pixel density is used so that the pixels are not visible to the user. For example, a display device with a resolution of 1000 ppi or more, preferably 5000 ppi or more, is desired. More preferably, the pixel density is 7000 ppi or more.

[0007] However, as pixel density increases, even if pixel defects, such as point defects, occur, In order to repair the defect, it is difficult to irradiate the defective pixel with a laser or the like.

[0008] One aspect of the present invention is to provide a method for operating a display device in which pixel defects are less likely to be visible. Another embodiment of the present invention is a display device capable of displaying a high-quality image. Another object of the present invention is to provide a method for operating a liquid crystal display device having a high pixel density. Another object of the present invention is to provide a method for operating a display device. Another object of the present invention is to provide a method for operating a display device. Another object of the present invention is to provide a method for operating a display device with low power consumption. An object of the present invention is to provide a novel method for operating a display device. An object of the present invention is to provide a display device that operates in accordance with the above-described operating method.

[0009] Note that the description of these problems does not preclude the existence of other problems. It is not necessary to solve all of these problems. From the description of the section, it is possible to extract other issues. [Means for solving the problem]

[0010] One embodiment of the present invention includes a display unit and a sensor unit. The display unit has m rows and n columns (m and n are 2). The number of pixels (an integer greater than or equal to 1) is arranged in a matrix, and the sensor section is provided with a photoelectric conversion element. A method for operating a display device, comprising: dividing a display unit into a first region and a second region; First light is emitted from the pixels included in the first region, and the brightness of the first light is converted by a photoelectric conversion element. The second light is emitted from the pixels included in the second region, and the luminance of the second light is photoelectrically converted. The brightness of the first light is detected by an element, and the brightness of the second light is compared with the brightness of the first light. , the first region or the second region is divided into a third region and a fourth region, and the third region A third light is emitted from the pixel included in the region, and the brightness of the third light is detected by the photoelectric conversion element. a fourth light is emitted from the pixel included in the fourth region, and the luminance of the fourth light is converted into a luminance of a photoelectric conversion element; The brightness of the third light is detected by a detector, and the brightness of the fourth light is compared to determine whether the pixel is defective. The present invention relates to a method of operating a display device, which detects defective pixels.

[0011] Alternatively, in the above-mentioned aspect, image data is generated, and the luminance represented by the image data is used to detect defective pixels. A fifth light, which is light with a brightness corrected based on the result, may be emitted from the pixel.

[0012] Alternatively, one embodiment of the present invention includes a display unit and a sensor unit. The display unit has m rows and n columns (m, n is an integer of 2 or more) are arranged in a matrix, and the sensor section is provided with a photoelectric conversion element. A method for operating a display device provided with a display unit, the method comprising: dividing a display unit into first to pth (p is 2 or more, m×n / The image is divided into regions (number of pixels is an integer not greater than 2), and the first to pth pixels are selected from the pixels included in the first to pth regions. Light is emitted, and the luminance of the first to pth light is detected by a photoelectric conversion element. and based on the result of the comparison, select a region including at least one of the first to pth regions. The p+1th region is a region from the p+2th to the qth (q is p+3 or more and m×n+p+1 or less). The pixel count is divided into p+1 to q regions (an integer number), and the pixels included in the p+2 to q regions are selected. The luminance of the p+1th to q-1th light beams is detected by the photoelectric conversion element. The brightness of the light from the p+1th to the q-1th pixels is compared to detect defective pixels. This is a method of operation of the display device.

[0013] Alternatively, in the above-mentioned aspect, image data is generated, and the luminance represented by the image data is used to detect defective pixels. The qth light, which is light with a brightness corrected based on the result, may be emitted from the pixel.

[0014] Alternatively, in the above embodiment, the correction may be performed using a neural network.

[0015] Alternatively, in the above-mentioned aspect, the learning of the neural network is performed by using learning image data and and the defective pixel coordinate data for learning corresponding to the image data for use are used as learning data. It may be done more.

[0016] Alternatively, in the above aspect, the display device may include a first layer and a second layer stacked together, The first layer includes a gate driver circuit and a data driver circuit, and the second layer includes a display a gate driver circuit and a data driver circuit for driving a pixel in a display unit; The gate driver circuit has an area overlapping with the pixel, and the data driver circuit overlaps with the gate driver circuit. It may have an area.

[0017] Alternatively, in the above aspect, the pixel may include a transistor having a metal oxide in a channel formation region. and the metal oxide may contain at least one of In and Zn. [Effects of the Invention]

[0018] According to one aspect of the present invention, there is provided a method for operating a display device in which pixel defects are less likely to be visible. Alternatively, a display device capable of displaying a high-quality image according to one embodiment of the present invention can be provided. According to one aspect of the present invention, a display having a high pixel density can be provided. According to one aspect of the present invention, a method for operating a device can be provided. A method for operating a display device can be provided. According to one embodiment of the present invention, a novel display device can be provided. According to one aspect of the present invention, a method for operating a display device can be provided. It is possible to provide a display device that operates at

[0019] The description of these effects does not preclude the existence of other effects. However, it is not necessary to have all of these effects. , it is possible to extract effects other than these. [Brief explanation of the drawings]

[0020] [Figure 1] Fig. 1A is a block diagram showing an example of the configuration of a display device, and Fig. 1B is a diagram showing an example of the configuration of a pixel. [Figure 2] 2A1 and 2A2, 2B1 and 2B2, 2C1 and 2C2, and 2D1 and 2D2 are diagrams showing an example of the operation of the display device. [Figure 3] 3A to 3C are diagrams showing an example of the operation of the display device. [Figure 4] 4A to 4H are block diagrams showing configuration examples of the display device. [Figure 5] 5A and 5B are diagrams showing an example of the operation of the display device. [Figure 6] 6A and 6B are diagrams showing an example of the operation of the display device. [Figure 7] 7A and 7B are diagrams showing an example of the operation of the display device. [Figure 8] 8A and 8B are diagrams showing an example of the operation of the display device. [Figure 9] 9A is a perspective view showing an example of the configuration of an electronic device, and FIG. 9B is a diagram showing an example of the configuration of a pixel. [Figure 10] 10A and 10B are diagrams showing the positional relationship between the display device and the user. [Figure 11] FIG. 11 is a flowchart showing an example of the operation of the display device. [Figure 12] 12A to 12C are diagrams showing examples of decision table 1, decision table 2, and a warning display. [Figure 13] FIG. 13 is a flowchart showing an example of the operation of the display device. [Figure 14]14A and 14B are diagrams showing an example of the determination table 3 and an example of a warning display. [Figure 15] FIG. 15 is a block diagram showing an example of the configuration of a display device. [Figure 16] FIG. 16 is a block diagram showing an example of the configuration of a display device. [Figure 17] FIG. 17 is a block diagram showing an example of the configuration of a display device. [Figure 18] FIG. 18 is a block diagram showing an example of the configuration of a display device. [Figure 19] FIG. 19 is a block diagram showing an example of the configuration of a display device. [Figure 20] FIG. 20 is a block diagram showing an example of the configuration of a display device. [Figure 21] FIG. 21 is a block diagram showing an example of the configuration of a display device. [Figure 22] FIG. 22 is a block diagram showing an example of the configuration of a gate driver circuit. [Figure 23] 23A and 23B are block diagrams showing examples of the configuration of a register circuit; [Figure 24] FIG. 24 is a schematic diagram showing an example of the layout of gate driver circuits and data driver circuits. [Figure 25] FIG. 25 is a top view showing an example of the configuration of a gate driver circuit and a data driver circuit. [Figure 26] 26A to 26G are diagrams showing examples of pixel configurations. [Figure 27] 27A to 27C are circuit diagrams showing examples of pixel configurations. [Figure 28] Fig. 28A is a circuit diagram showing an example of the configuration of a pixel, and Fig. 28B is a timing chart showing an example of a method of operating the pixel. [Figure 29] Figures 29A, 29C, and 29D are circuit diagrams showing examples of pixel configurations, and Figure 29B is a timing chart showing an example of a pixel operation method. [Figure 30] 30A to 30E are circuit diagrams showing examples of pixel configurations. [Figure 31] FIG. 31 is a block diagram showing an example of the configuration of a display device. [Figure 32] FIG. 32 is a diagram illustrating an example of the operation of the display device. [Figure 33] FIG. 33 is a cross-sectional view showing an example of the configuration of a display device. [Figure 34] FIG. 34 is a cross-sectional view showing an example of the configuration of a display device. [Figure 35] FIG. 35 is a cross-sectional view showing an example of the configuration of a display device. [Figure 36] FIG. 36 is a cross-sectional view showing an example of the configuration of a display device. [Figure 37] FIG. 37 is a cross-sectional view showing an example of the configuration of a display device. [Figure 38] FIG. 38 is a cross-sectional view showing an example of the configuration of a display device. [Figure 39] 39A and 39B are top views showing examples of pixel configurations. [Figure 40] FIG. 40 is a top view showing an example of the configuration of a pixel. [Figure 41] FIG. 41 is a cross-sectional view showing an example of the configuration of a pixel. [Figure 42] Fig. 42A is a schematic diagram showing an example of the configuration of a pixel, and Fig. 42B is a top view showing an example of the configuration of a pixel. [Figure 43] 43A and 43B are top views showing examples of pixel configurations. [Figure 44] FIG. 44 is a top view showing an example of the configuration of a pixel. [Figure 45] FIG. 45 is a top view showing an example of the configuration of a pixel. [Figure 46] FIG. 46 is a cross-sectional view showing an example of the configuration of a pixel. [Figure 47] 47A to 47E are diagrams showing configuration examples of light-emitting elements. [Figure 48] Fig. 48A is a top view illustrating an example of the structure of a transistor, and Fig. 48B and Fig. 48C are cross-sectional views illustrating an example of the structure of a transistor. [Figure 49]Fig. 49A is a top view illustrating an example of the structure of a transistor, and Fig. 49B and Fig. 49C are cross-sectional views illustrating an example of the structure of a transistor. [Figure 50] Fig. 50A is a top view illustrating an example of the structure of a transistor, and Fig. 50B and Fig. 50C are cross-sectional views illustrating an example of the structure of a transistor. [Figure 51] Fig. 51A is a diagram explaining the classification of IGZO crystal structures, Fig. 51B is a diagram explaining the XRD spectrum of a CAAC-IGZO film, and Fig. 51C is a diagram explaining the electron microbeam diffraction pattern of a CAAC-IGZO film. [Figure 52] 52A to 52G are perspective views showing configuration examples of electronic devices. [Figure 53] Fig. 53A is a diagram showing the measurement results of Ig-Vg characteristics according to an example, and Fig. 53B and Fig. 53C are diagrams showing the measurement results of Id-Vd characteristics according to an example. [Figure 54] 54A and 54B are diagrams showing the measurement results of the Id-Vd characteristics according to the example. DETAILED DESCRIPTION OF THE INVENTION

[0021] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiments, and various changes and modifications may be made in the form and details thereof without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be achieved by the following embodiments. It should not be construed as being limited to the contents described.

[0022] In the configuration of the invention described below, the same parts or parts having similar functions are designated by the same reference numerals. The same reference numerals are used in common among different drawings, and the repeated explanations thereof will be omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be added.

[0023] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as those in actual applications for ease of understanding. The position, size, range, etc. may not be shown. Therefore, the disclosed invention may not necessarily be The present invention is not limited to the position, size, range, etc. disclosed in the drawings.

[0024] The terms "film" and "layer" may be interchangeable depending on the situation. For example, the term "conductive layer" can be used interchangeably with the term "conductive film." Alternatively, for example, the term "insulating film" can be changed to "insulating The term "edge layer" can be changed to "edge layer."

[0025] In this specification, terms such as "electrode," "wiring," and "terminal" are used to refer to these components functionally. This is not a limitation. For example, an "electrode" may be used as part of a "wiring." , and vice versa. Furthermore, the terms "electrode" and "wiring" may be used interchangeably with "electrodes" and "wiring." This also includes cases where "terminal" is formed integrally with "wiring." It may also be used as part of an "electrode" or "terminal" and vice versa. The term "electrodes," "wiring," "terminals," etc. may also be used when multiple "electrodes," "wiring," "terminals," etc. are integrally formed. Therefore, for example, an "electrode" can be a part of a "wiring" or a "terminal." For example, a "terminal" can be a part of a "wiring" or an "electrode." Terms such as "wire" and "terminal" may be replaced with terms such as "area" in some cases. It may be possible to do this.

[0026] In this specification, the resistance value of a "resistor" may be determined by the length of the wiring. Or, the resistance value can be determined by connecting a conductor having a different resistivity from the conductor used in the wiring. Alternatively, the resistance value can be determined by doping impurities into the semiconductor. There are cases where this happens.

[0027] In this specification, "electrically connected" refers to a direct connection and a connection made by some means. This includes cases where the connection is made via "something that has an electrical effect." "Something with electrical action" means something that allows the transmission and reception of electrical signals between connected objects. Therefore, even if it is expressed as "electrically connecting," In some circuits, there are no physical connections, just wires running. Even when it is expressed as a "direct connection," it is not the case that different conductors are connected via contacts. In addition, wiring may include cases where different conductors contain one or more of the same elements. In some cases, the element is a single element, and in other cases, it contains different elements.

[0028] In this specification, metal oxide refers to a metal oxide in a broad sense. Metal oxides are oxides. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). , oxide semiconductors (also referred to as OS), etc. For example, when a metal oxide is used in the semiconductor layer of a transistor, the metal oxide In other words, when describing an OS FET, In other words, a transistor including a metal oxide or an oxide semiconductor.

[0029] In this specification and the like, metal oxides containing nitrogen are also referred to as metal oxides. Nitrogen-containing metal oxides are also called metal oxynitrides (met). It may also be called hydroxybenzoxanthate (hydroxybenzoxanthate).

[0030] (Embodiment 1) In this embodiment, a display device according to one embodiment of the present invention and an operation method thereof will be described with reference to drawings. I will explain.

[0031] According to one embodiment of the present invention, a defective pixel is detected from among pixels provided in a display portion of a display device. The present invention also relates to a method for adjusting an image to be displayed on a display device based on the coordinates of the detected defective pixels. It relates to a method for correcting the same.

[0032] In this specification, the term "defective pixel" refers to a pixel that is provided with a display element and that is Pixels that are always in a display or non-display state, or display elements that cannot be controlled normally Defective pixels are pixels that are in the following state: a short circuit between the electrodes of the display element, or a short circuit between the wiring. , a short circuit between the electrode of the display element and the wiring, or a malfunction of the transistor connected to the display element. It occurs due to factors such as good.

[0033] Here, a pixel in the "always on" state refers to a pixel that is constantly emitting light. Pixels that are always on can be called "white defective pixels," for example. Also, pixels that are in the "always hidden" state are pixels that have an image displayed on the display, In other words, even if pixels other than the defective pixel are emitting light, the pixel that does not emit light is displayed. Pixels that are always hidden can be called "black defective pixels," for example. do.

[0034] <Display device configuration example 1> FIG. 1A is a block diagram illustrating a structural example of a display device 10 that is a display device according to one embodiment of the present invention. The display device 10 has a layer 20 and a layer 30 laminated on top of the layer 20. The layer 20 is a gate electrode. Layer 3 includes a gate driver circuit 21, a data driver circuit 22, and a functional circuit 40. 0 is a display unit 33 in which pixels 34 are arranged in a matrix, and a sensor in which pixels 36 are arranged. and a portion 35. Between the layer 20 and the layer 30, an interlayer insulator may be provided.

[0035] Here, as shown in FIG. 1B, the pixel 34 has a display element 81, and light 82 is emitted from the display element 81. As a result, an image can be displayed on the display unit 33. The photoelectric conversion element 83 has a photoelectric conversion element 83. The photoelectric conversion element 83 converts light 8 Therefore, the sensor unit 35 is provided with a photoelectric conversion element 83. In this way, the brightness of the light irradiated onto the sensor unit 35 can be detected.

[0036] Various elements can be used as the display element 81, but representative examples include organic light-emitting elements and LEDs. Light emitting elements such as ED elements, liquid crystal elements, or MEMS (Micro Electro Mechanical Systems) Mechanical Systems elements, etc. can be applied.

[0037] The functional circuit 40 is connected to the gate driver circuit 21, the data driver circuit 22, and the pixels 36. electrically connected.

[0038] The pixels 34 in the same row are electrically connected to the gate driver circuit 21 via the wiring 31. The pixels 34 in one column are electrically connected to the data driver circuit 22 via wiring 32 .

[0039] In FIG. 1A, the pixels 34 in one row are electrically connected by one wiring 31, and the pixels 34 in one column are Although the pixel 34 is electrically connected by one wiring 32, For example, the pixels 34 in one row are electrically connected by two or more wirings 31. Alternatively, one column of pixels 34 may be electrically connected by two or more wirings 32. Alternatively, for example, one wiring 31 may be electrically connected to two or more rows of pixels 34. Alternatively, one wiring 32 may be electrically connected to two or more columns of pixels 34. That is, for example, one wiring 31 may be shared by two or more rows of pixels 34, or one wiring 32 may be shared by two or more columns of pixels 34.

[0040] The functional circuit 40 performs the processing required for the display device 10 to perform the desired function. For example, the functional circuit 40 controls each of the pixels 34 provided in the display unit 33. It also has a function of generating image data, which is data that represents the brightness of the light emitted from the The functional circuit 40 has a function of correcting the generated image data by a method according to one aspect of the present invention. For example, the image data may be corrected based on the brightness of the light irradiated onto the sensor unit 35. Possess the ability.

[0041] The functional circuit 40 also has a function of performing processing using machine learning, which will be described later. The functional circuit 40 has a function of performing processing using a neural network. It has the function of correcting image data based on the inference results obtained through learning.

[0042] The functional circuit 40 also has a function of controlling the operation of each circuit included in the display device 10. For example, it has the function of generating a start pulse signal, a clock signal, etc. The circuit 40 can be said to have a control circuit. The control circuit includes a CPU (Central Processing Unit). GPU (Graphics Processing Unit), GPU (Graphics Processing Unit) The configuration may include a microphone unit (singing unit) or the like.

[0043] Furthermore, the functional circuit 40 stores a program for controlling the operation of the display device 10. The functional circuit 40 also has a function of storing image data generated by the functional circuit 40. Therefore, the functional circuit 40 can be said to have a memory circuit. The memory circuit includes at least one of a volatile memory and a nonvolatile memory. The circuit may include volatile memory, such as DRAM or SRAM. The circuit is, for example, a ReRAM (Resistive Random Access Memory memory, also known as resistive memory), PRAM (Phase change Random Access Memory) dom Access Memory), FeRAM (Ferroelectric R andom Access Memory), MRAM (Magnetoresisti ve Random Access Memory (also known as magnetoresistive memory), or Flash memory (including NAND flash memory and NOR flash memory) Any non-volatile memory may be included.

[0044] The gate driver circuit 21 generates signals for controlling the operation of the pixels 34 and connects the wiring 31 to the The gate driver circuit 21 has a function of supplying the signal to the pixel 34 via the For example, the wiring 31 has a function of supplying the signals in order from the pixel 34 in the first row. can be said to function as a scanning line.

[0045] The data driver circuit 22 supplies the image data output by the functional circuit 40 to the pixels 34. Therefore, it can be said that the wiring 32 functions as a data line. Specifically, the data driver circuit 22 converts the digital image data output by the functional circuit 40 into This has the function of converting the image data into analog image data and supplying it to the pixel 34. The element 34 emits light with a brightness corresponding to the image data, and the image is displayed on the display unit 33. It is possible.

[0046] The display device 10 includes a gate driver circuit 21 and a data driver circuit 22 provided on a layer 20. 2 has an area overlapping with the display section 33. For example, the gate driver circuit 21 and the data The gate driver circuit 22 has an area overlapping with the pixel 34. The data driver circuit 22 and the display unit 33 are stacked so as to have overlapping areas. By providing the display device 10 in this manner, the frame of the display device 10 can be narrowed and the size of the display device 10 can be reduced. do.

[0047] In addition, the gate driver circuit 21 and the data driver circuit 22 are not clearly separated but overlap each other. The area is referred to as area 23. The gate driver circuit 21 and the data driver The circuit 22 has the region 23, so that the gate driver circuit 21 and the data driver circuit Therefore, even when the area of the display unit 33 is small, Even if there is a gate driver circuit 21 and a data driver circuit 22, Alternatively, the gate driver circuit 21 and the data driver circuit 22 can be provided without being exposed. The area of the path 22 that does not overlap with the display unit 33 can be reduced. The frame can be made narrower and the size can be reduced compared to when the region 23 is not provided. .

[0048] The functional circuit 40 can be provided so as not to overlap with the display unit 33. 0 may be provided so as to have an area overlapping with the display unit 33. The sensor portion 35 may be provided so as to have an area overlapping the sensor portion 35 .

[0049] As shown in FIG. 1A, the display device 10 has a structure in which a sensor unit 35 is provided around a display unit 33. This allows defects in the pixels 34 of the display unit 33, such as point defects, to be detected by the sensor. That is, the pixel 34 of the display unit 33 can be detected by using the pixel 35. , defective pixels can be detected.

[0050] Information relating to the detected defective pixels, specifically, information relating to the coordinates representing the positions of the defective pixels, is The data can be stored in a memory circuit included in the functional circuit 40, for example.

[0051] <Example of defective pixel detection method 1> An example of a method for detecting defective pixels is shown in FIGS. 2A1 and 2A2, 2B1 and 2B2, and 2C1 and 2C2, and 2D1 and 2D2.

[0052] In the following description, the display unit 33 has pixels 34 arranged in four rows and four columns, and the pixel 34 in the second row and second column is a black defective pixel. An example of a method for detecting black defective pixels will be described below.

[0053] In this specification and the like, when the same reference numeral is used for a plurality of elements, it is not necessary to distinguish them. When there is a distinction between the two, the code should be "[m,n]", "[n]", "_1", "_2", etc. For example, pixel 34 in the first row and first column is designated as pixel 34[1, 1], pixel 34 in the second row and second column is described as pixel 34[2,2], and pixel 34 in the fourth row and fourth column is described as pixel 34[2,2]. 34 will be described as pixel 34[4,4]. Also, for example, among pixel 34[1,1], [1, 1] can be said to be a coordinate.

[0054] 2A1 to 2D2, pixel 34[2,2] is shown as a defective pixel. The element 34[2,2] is hatched.

[0055] First, as shown in FIGS. 2A1 and 2A2, the display unit 33 is divided into an area Ra[1] and an area Ra[ In FIG. 2A1, the pixel 34 in the first column and the pixel 34 in the second column are divided into the regions In FIG. 2A2, the pixel 34 in the third column and the pixel 35 in the fourth column are included in Ra[1]. It is assumed that pixel 34 is included in the region Ra[2].

[0056] Next, light La[1] is emitted from the pixel 34 included in the region Ra[1]. Specifically, for example, white light is emitted as the light La[1], and the brightness is detected. The other lights shown in FIGS. 2A1 to 2D2 are also detected in the same manner as the light La[1]. The light detection shown in FIGS. 2A1 to 2D2 can be performed in the same manner as in FIG. 1A etc. This can be done using the sensor unit 35 shown in FIG.

[0057] Here, when the light emitted from the pixel 34 is detected using the sensor unit 35, the display unit 33 It is preferable to cover the display unit 3 and the sensor unit 35 with a material that has a high diffuse reflectance of light. It is preferable to cover the light emitting element 3 and the sensor unit 35 with paper. Even if the directivity of the light to be emitted is high, the light can be efficiently incident on the sensor unit 35. In addition, light other than the light emitted from the pixel 34 can be incident on the sensor unit 35. As a result, the brightness of the light emitted from the pixel 34 can be reduced by 5 can be used to detect with high accuracy.

[0058] Then, light La[2] is emitted from the pixel 34 included in the region Ra[2]. Detect the brightness of the

[0059] Next, the brightness of the light La[1] and the brightness of the light La[2] are compared. In the case shown in FIG. 2, all pixels 34 included in the region Ra[2] emit white light. On the other hand, among the pixels 34 included in the region Ra[1], the pixel 34[2,2] is white. It is not possible to emit colored light, or light with a lower brightness than the light emitted from other pixels 34. Therefore, the brightness of light La[1] is lower than the brightness of light La[2]. It becomes.

[0060] As described above, the display device 10 performs the operations shown in FIGS. 2A1 and 2A2 to set the area Ra[ 1] can detect that black defective pixels are included.

[0061] Next, as shown in FIGS. 2B1 and 2B2, the region Ra[1] is divided into the region Rb[1] and the region R In FIG. 2B1, the pixel 34[1,1], the pixel 34[1,2], and the pixel 34[1,3] are divided into It is assumed that pixel 34[2,1] and pixel 34[2,2] are included in region Rb[1]. In addition, in FIG. 2B2, pixel 34[3,1], pixel 34[3,2], pixel 34[4,1], and pixel 34[4,2] is included in region Rb[2].

[0062] Next, light Lb[1] is emitted from pixel 34 included in region Rb[1]. Then, light Lb[2] is emitted from pixel 34 included in region Rb[2]. The luminance of the light Lb[2] is detected.

[0063] Next, the luminance of the light Lb[1] is compared with the luminance of the light Lb[2]. In the case shown in FIG. 2, all pixels 34 included in the region Rb[2] emit white light. On the other hand, among the pixels 34 included in the region Rb[1], the pixel 34[2,2] is white. It is not possible to emit colored light, or light with a lower brightness than the light emitted from other pixels 34. Therefore, the brightness of light Lb[1] is lower than the brightness of light Lb[2]. It becomes.

[0064] As described above, the display device 10 performs the operations shown in FIGS. 2B1 and 2B2 to adjust the area Rb[ 1] can detect that black defective pixels are included.

[0065] Next, as shown in FIGS. 2C1 and 2C2, the region Rb[1] is divided into the region Rc[1] and the region R In FIG. 2C1, the pixel 34[1,1] and the pixel 34[2,1] are divided into In FIG. 2C2, pixels 34[1,2] and 34[1,2] are included in the region Rc[1]. and pixel 34[2,2] is included in region Rc[2].

[0066] Next, light Lc[1] is emitted from the pixel 34 included in the region Rc[1]. Then, light Lc[2] is emitted from pixel 34 included in region Rc[2]. The luminance of the light Lc[2] is detected.

[0067] Next, the luminance of the light Lc[1] and the luminance of the light Lc[2] are compared. In the case shown in FIG. 2, all pixels 34 included in the region Rc[1] emit white light. On the other hand, among the pixels 34 included in the region Rc[2], the pixel 34[2,2] is white. It is not possible to emit colored light, or light with a lower brightness than the light emitted from other pixels 34. Therefore, the brightness of the light Lc[2] is lower than the brightness of the light Lc[1]. It becomes.

[0068] As described above, the display device 10 performs the operations shown in FIGS. 2C1 and 2C2 to set the area Rc[ 2] can detect that black defective pixels are included.

[0069] Next, as shown in FIGS. 2D1 and 2D2, the region Rc[2] is divided into the region Rd[1] and the region R In FIG. 2D1, pixel 34[1,2] is included in region Rd[1]. In addition, in FIG. 2D2, pixel 34[2,2] is included in region Rd[2]. It is said that this is the case.

[0070] Next, light Ld[1] is emitted from the pixel 34 included in the region Rd[1]. Then, light Ld[2] is emitted from the pixel 34 included in the region Rd[2]. The luminance of the light Ld[2] is detected.

[0071] Next, the luminance of the light Ld[1] and the luminance of the light Ld[2] are compared. In the case shown in FIG. 2, the pixel 34[1,2] included in the region Rd[1] emits white light. On the other hand, the pixel 34[2,2] included in the region Rd[2] emits white light. or emits light with a lower brightness than the light emitted from pixel 34[1,2]. Therefore, the brightness of the light Ld[2] is lower than the brightness of the light Ld[1]. .

[0072] As described above, the display device 10 performs the operations shown in FIGS. 2D1 and 2D2 to adjust the area Rd[ 2] can detect that black defective pixels are included.

[0073] By performing the operations shown in FIGS. 2A1 to 2D2, the pixel 34[2,2] is prevented from becoming a black defect. The above-described method for detecting defective pixels can be used to detect white defects. This can also be applied to the case of detecting a defective pixel. For example, the following methods shown in FIGS. By making the light black or close to black, there is no white defect in the area where high brightness light is emitted. It is possible to detect whether or not a pixel is included. Indicates that no noise will be emitted.

[0074] Also, for example, when the display unit 33 has the configuration shown in FIG. 2A1 and FIG. 2A2, It is not necessary to perform all of the operations shown in FIG. 2D2. This allows the display device 10 to quickly correct defective pixels. It should be noted that if the operations shown in Figs. 2D1 and 2D2 are not performed, For example, the pixel 34[1,2] and the pixel 34[2] included in the region Rc[2] shown in FIG. ,2] are both detected as defective pixels.

[0075] Here, when the number of pixels 34 provided in the display unit 33 is large, the pixels 34 are defective pixels. In other words, the pixel 34 that is not a defective pixel is detected as a defective pixel. If no such defects are allowed, the operation of detecting defective pixels will take a long time. If the pixel density is high, for example, the pixel density is 1000 ppi or more, 5000 ppi or more, or 700 If the pixel density is 0 ppi or higher, the area per pixel becomes smaller. For each pixel 34, the brightness of the light emitted from the pixel is reduced. Even if a non-defective pixel 34 located around the pixel is detected as a defective pixel, the display unit 3 Therefore, the image displayed on the display unit 33 is not significantly affected. When the number of pixels 34 that can be detected is large and the pixel density is high, the non-defective pixels 34 may be defective. It is preferable to allow a certain degree of detection as a pixel. Even if the number of pixels 34 provided in the display device 10 is large, the display device 10 can quickly remove defective pixels. It can be detected.

[0076] For example, one of the pixels 34 included in the region Ra[1] shown in FIG. 2A1 and the pixel 34 included in the region Ra[2] shown in FIG. If one of the pixels 34 included in the area Ra[2] is a defective pixel, The brightness of the light La[1] is equal to the brightness of the light La[2] shown in FIG. First, the operations shown in FIGS. 2B1 to 2D2 are performed. Defective pixels can be detected. Next, the operations shown in Figures 2A1 and 2A2 are performed again. At this time, taking into consideration the detected defective pixel, the luminance of the light La[1], the luminance of the light La[2], and For example, compare the brightness of light La[1] with the brightness of light La[2]. The brightness of light La[2] is lower than 8 / 7 times the brightness of light La[1], so 2B1 to 2D2. This allows the defective pixels contained in the region Ra[2] to be detected.

[0077] As described above, even if the display unit 33 has two or more defective pixels, the display unit 33 shown in FIG. 1 to 2D2, defective pixels can be detected.

[0078] In addition, in each of FIGS. 2A1 to 2D2, the display unit 33 is divided into two areas. However, the present invention is not limited to this. For example, the display unit 33 may be divided into three areas. For example, the display unit 33 may be divided into four or more regions. When the display units 33 are arranged in a trix shape, p (p is an integer of 2 or more and m×n / 2 or less) are arranged. The area may be divided into several regions.

[0079] For example, when the display unit 33 is divided into p regions (first to pth regions), first, The first light is emitted from the pixels 34 included in the region, and the brightness of the first light is detected. The second light is emitted from the pixels 34 included in this region, and the brightness of the second light is detected. Then, the brightness of the light emitted from the pixel 34 included in the pth region is detected in sequence.

[0080] Next, the brightness of the first to pth light is compared, and based on the comparison result, among the first to pth regions, The region that includes at least one pixel is defined as the p+1th region. The region obtained by dividing the p+1th region is called the p+1th region. Then, the p+1th region is divided into two or more regions. For example, the area is divided into p+2 to q (q is an integer between p+3 and m×n+p+1). Divide.

[0081] Thereafter, the pixel 34 included in the p+2th region emits the p+1th light. Next, the (p+2)th light is emitted from the pixel 34 included in the (p+3)th region, The brightness of the p+2th light is detected. Then, for example, the p+1th area is divided into the p+2th to qth areas. When the pixel 34 is divided into q-th and q-1-th regions, the brightness of the light emitted from the pixel 34 included in the q-th region is Then, they are detected sequentially.

[0082] Then, for example, the brightness of the p+1th to q-1th lights is compared, and based on the comparison results, the brightness of the p+2th to q-1th lights is calculated. The region that includes at least one of the regions from the qth region to the qth region is called the q+1th region. For example, The region determined to contain the pixel is designated as the q+1th region.

[0083] By repeating the above-described operations, defective pixels can be detected.

[0084] Although each region shown in FIGS. 2A1 to 2D2 is rectangular, one aspect of the present invention is For example, a checkered pattern may be used. For example, in FIG. 2A1, pixel 34[ 1,1], pixel 34[2,2], pixel 34[1,3], pixel 34[2,4], pixel 34[ 3,1], pixel 34[4,2], pixel 34[3,3], and pixel 34[4,4] The area may be the area Ra[1]. 34[1,2], pixel 34[2,3], pixel 34[1,4], pixel 34[4,1], pixel The area including pixel 34[3,2], pixel 34[4,3], and pixel 34[3,4] is called area Ra[ 2] may also be used.

[0085] The shapes of the regions shown in FIGS. 2A1 to 2D2, that is, the shapes of the regions shown in FIGS. The included pixels 34 may be determined using machine learning. When the shape of the region is determined by machine learning, a display device manufactured in the same process as the display device 10 is used. The data representing the coordinates of defective pixels occurring in the position can be used as learning data.

[0086] The shapes of the regions shown in FIGS. 2A1 to 2D2 are determined by using a neural network. When determining by reinforcement learning, for example, The less time you spend on it, the higher the reward you can receive.

[0087] The shape of each region shown in FIGS. 2A1 to 2D2 is determined using machine learning. For example, the shape can be optimized due to the manufacturing process of the display device 10. If there is a bias in the area where defective pixels are likely to occur, This allows for concentrated testing (such as comparing the brightness of light emitted from pixels 34) This allows the shape of the area to be determined, thereby enabling the detection of defective pixels to be performed quickly and accurately. It can be done accurately.

[0088] <Example of image correction method> An example of a method for correcting an image displayed on the display unit 33 based on the result of detecting defective pixels is as follows: 3A to 3C, the following will be explained. Specifically, based on the coordinates of the detected defective pixel, An example of a method for correcting image data generated by the functional circuit 40 shown in FIG. 1A etc. will be described. The pixel 34 emits light with the luminance represented by the corrected image data, The corrected image can be displayed in 3.

[0089] Correction of the image displayed on the display unit 33 can be performed using machine learning. The image displayed on the display unit 33 can be corrected by using a neural network. By using a neural network, it is possible to perform the correction without creating a detailed algorithm. Even if the pixel 34 is not displayed correctly, the display unit 33 can perform high-precision correction so that the defect of the pixel 34 is not noticeable. 3A to 3C are diagrams showing the results of the machine learning method. 10 shows an example of a method for correcting an image displayed on the display unit 33.

[0090] 〔study〕 3A and 3B are diagrams illustrating an example of a learning method. This can be done using generator 160.

[0091] The generator 160 may be a neural network program, An image can be generated from input data. For example, Autoencoder (AE), Convolutional Autoencoder coder (CAE), etc. Also, as the generator 160, DCGAN ( Deep Convolutional Generative Adversaria l Networks), etc., GAN (Generative Adversarial A model applying the Networks may also be used.

[0092] The learning data 161 includes learning image data 162 representing an image including a defect and the position of the defect. 3A, the learning data 163 includes the defective pixel coordinate data for learning, which represents the coordinates of the defective pixel. When the data 161 is input to the generator 160, an image with the defects corrected is output. For example, multiple images with different correction patterns can be output. For each image, it is judged whether the correction has been performed correctly. For example, if the defect is not noticeable, It is determined whether correction has been made so that the image does not look like the original. This determination can be made, for example, by visual inspection. In Figures 3A and 3B, you can judge whether the correction is correct by clicking "OK." The result of the learning data is shown as "NG" and the result of the correction is shown as "NG". By including the defective pixel coordinate data 163 for learning in the data 161, the image around the defective pixel can be This allows for focused correction of the brightness of the light emitted from the element, making defects less noticeable. Therefore, a high-quality image can be displayed on the display unit 33. can.

[0093] By repeatedly performing the operation shown in FIG. 3A, the generator 160 This allows the image data input to be correctly corrected. , the learning image data 162 and the learning defective pixel coordinate data included in the learning data 161 Although there is one type of each of 163, there may be two or more types.

[0094] Next, we test whether the learning has been completed satisfactorily. As shown in Figure 3B, Test data 164 including test data 165 and test defective pixel coordinate data 166 is When input to the generator 160, a corrected image based on the learning results is output. , and for each output image, it is determined whether the correction has been performed correctly. If the percentage of images where learning is performed correctly is above a certain level, learning is considered to be sufficient. The learning is completed and the learning result 167 is stored. The learning result 167 is, for example, On the other hand, the percentage of images that are correctly corrected is constant. If it is less than 1 / 2, it is determined that the learning has not been performed sufficiently, and the learning shown in FIG. 3A is performed again. The above is an example of a learning method. Note that the generator 160 uses a neural network. In the case of a program that has been learned, the learning result 167 can be a weighting factor.

[0095] 〔inference〕 FIG. 3C shows an inference method, specifically, a method for making defects less noticeable when an image is displayed on the display unit 33. 10 is a diagram showing an example of a method for correcting image data generated by the functional circuit 40 so as to .

[0096] As shown in FIG. 3C, image data 168 and a defect image representing the coordinates of the positions of the detected defective pixels are provided. The pixel coordinate data 169 is input to the trained generator 160. Image data 170 representing the corrected image is output from generator 160. The data 160 is in a state where the learning result 167 obtained by the prior learning is read. The generator 160 reads the result 167 and adjusts the image, for example, to make defects less noticeable. The image data 168 may be corrected.

[0097] The above is an example of a method for correcting image data generated by the functional circuit 40.

[0098] <Example of sensor placement> 4A to 4H are diagrams showing an example of the arrangement position of the sensor unit 35. Alternatively, the sensor unit 35 may be disposed at the upper left of the display unit 33. Alternatively, the sensor unit 33 may be located at the lower left, upper right, or lower right of the sensor unit 33. 35 may be arranged at all of the upper left, lower left, upper right, and lower right of the display unit 33. As shown in FIG. 4C, the sensor unit 35 may be disposed on the left side of the display unit 33. The sensor unit 35 may be disposed on the right side of the display unit 33. 5 may be disposed on the left and right of the display unit 33. Also, as shown in FIG. 4E, the sensor unit 35 The sensor unit 35 may be disposed below the display unit 33. As shown in FIG. 4F, the sensor unit 35 may be disposed above and below the display unit 33. 4G, the sensor unit 35 may be arranged above, below, left and right of the display unit 33. As shown in FIG. 4H, the sensor unit 35 may be arranged to surround the display unit 33. Good too.

[0099] <Example of defective pixel detection method 2> Here, when the display device 10 has a plurality of sensor units 35, a defective pixel included in the display unit 33 The brightness of the light emitted from the pixel 34 when detecting the pixel 34 varies depending on the position of the area including the pixel 34. Therefore, it is preferable to perform the detection using different sensor units 35. 6B, 7A and 7B, and 8A and 8B show the sensor unit 35 shown in FIG. 4G. When the display unit 33 is provided with the above, below, left and right of the display unit 33, the defect included in the display unit 33 is 5A to 8B are diagrams illustrating an example of a pixel detection method. The sensor unit 35 provided below the display unit 33 is referred to as a sensor unit 35T. 35 is a sensor unit 35B, and the sensor unit 35 provided on the left side of the display unit 33 is a sensor unit 35 The sensor unit 35 provided on the right side of the display unit 33 is designated as sensor unit 35R.

[0100] 5A to 8B, the display unit 33 has the pixel 3 4[1,1] to pixel 34[4,4], and pixel 34[2,2] is a defective pixel. Here, to indicate that pixel 34[2,2] is a defective pixel, 4[2,2] is hatched.

[0101] The method shown in FIGS. 5A to 8B may be the same as the method shown in FIGS. 2A1 to 2D2. Specifically, Fig. 5A and Fig. 2A1 show the same method, and Fig. 5B and Fig. 2A2 show the same method. 6A and 2B1 show a similar method, and FIG. 6B and 2B2 show a similar method. 7A and 2C1 show a similar method, and FIG. 7B and 2C2 show a similar method, 8A and 2D1 show similar methods, and FIG. 8B and 2D2 show similar methods. It is possible.

[0102] As shown in FIG. 5A, the light La[1] emitted from the pixel 34 included in the region Ra[1] The brightness is preferably detected using a sensor unit 35L. The luminance of the light La[2] emitted from the pixel 34 included in the region Ra[2] is It is preferable to use R for detection. This allows the pixel 34 from which the light is emitted and the pixel 34 from which the light is received to be detected. The distance between the sensor unit 35 and the light source La[1] can be reduced. Detect the distance from the sensor unit 35 to the area Ra[1] and the brightness of the light La[2] It is possible to reduce the difference between the distance from the sensor unit 35 to the area Ra[2] and This makes it possible to compare the brightness of light La[1] with the brightness of light La[2] with high accuracy. Therefore, defective pixels can be detected with high accuracy.

[0103] Also, as shown in FIG. 6A, light Lb[ The brightness of the light source 1 is preferably detected by using a sensor unit 35T. As shown, the luminance of the light Lb[2] emitted from the pixel 34 included in the region Rb[2] is It is preferable to use the unit 35B for detection. The distance between the sensor unit 35 that detects the light and the light Lb[1] can be reduced. The distance from the sensor unit 35 that detects the brightness to the region Rb[1] and the brightness of the light Lb[2] are detected. This can reduce the difference between the distance from the sensor unit 35 outputting the signal to the region Rb[2] and the distance from the sensor unit 35 outputting the signal to the region Rb[3]. As a result, the luminance of light Lb[1] and the luminance of light Lb[2] can be compared with high accuracy. This allows for highly accurate detection of defective pixels.

[0104] Also, as shown in FIG. 7A, light Lc[ The brightness of the light source 1 is preferably detected by using a sensor unit 35T. As shown, the luminance of the light Lc[2] emitted from the pixel 34 included in the region Rc[2] is also It is preferable to detect the light Lc[ When the luminance of the light Lc[1] and the light Lc[2] is detected by using the sensor unit 35B, This allows the pixel 34 to be positioned closer to the sensor unit 35 that detects the light. The luminance of the light Lc[1] and the light Lc[2] is measured using the sensor unit 35L or the sensor unit 35R. The sensor unit 35 that detects the luminance of the light Lc[1] is connected to the area Rc[1]. and the distance from the sensor unit 35 that detects the brightness of the light Lc[2] to the region Rc[2]. As a result, the difference between the luminance of light Lc[1] and the luminance of light Lc[2] can be reduced. Since the brightness of can be compared with that of, defective pixels can be detected with high accuracy. It is possible.

[0105] Furthermore, as shown in FIG. 8A, the light Ld emitted from the pixel 34 included in the region Rd[1] The brightness of [1] is preferably detected using the sensor unit 35L. In this way, the luminance of the light Ld[2] emitted from the pixel 34 included in the region Rd[2] is also It is preferable to use the sensor unit 35L to detect the light Ld The luminance of the light Ld [1] and the light Ld [2] is detected by the sensor unit 35B or the sensor unit 35R. In some cases, the distance between the pixel 34 that emits the light and the sensor unit 35 that detects the light is shortened. The luminance of the light Ld[1] and the light Ld[2] can be measured by using the sensor unit 35T. When detecting the area Rd[1] from the sensor unit 35 that detects the luminance of the light Ld[1], and the distance from the sensor unit 35 that detects the luminance of the light Ld[2] to the region Rd[2]. As a result, the difference between the luminance of light Ld[1] and the luminance of light Ld[2] can be reduced. ] and , it can be compared with high accuracy, so defective pixels can be detected with high accuracy. It is possible to do so.

[0106] As described above, the brightness of the light emitted from the pixel 34 increases as the distance from the pixel 34 increases. It is preferable to perform the detection using the sensor unit 35. Also, for example, the pixel included in the first region The brightness of the first light emitted from the pixel 34 included in the second region is Let us consider the case where the brightness of the first light is compared with the brightness of the second light, which is the light that is reflected from the first light. The distance from the sensor unit 35 that detects the luminance of the second light to the first region is It is preferable that the distance from the sub-section 35 to the second region is as equal as possible. In this way, the sensor unit 35 for detecting the luminance of the first light and the sensor unit 36 for detecting the luminance of the second light are It is preferable to select the section 35. As a result, it is possible to compare the brightness of light with high accuracy. Therefore, defective pixels can be detected with high accuracy.

[0107] <Examples of electronic devices> FIG. 9A shows the appearance of an electronic device 100 to which the display device 10 can be applied. 9A is a perspective view showing an example of the electronic device 100. As shown in FIG. FIG. 9A shows the electronic device 100 including the housing 101 and the display unit 33. It shows.

[0108] With an HMD, the distance between the display and the user is short, making it easier for the user to see the pixels and enhancing the sense of grain. This can make the user feel uncomfortable, which can reduce the immersive and realistic feel of AR or VR. Therefore, in an HMD, it is preferable to increase the pixel density so that the pixels are not visible to the user. For example, 1000 ppi or more, preferably 5000 ppi or more, more preferably A pixel density of 7000 ppi or greater is preferred.

[0109] As described above, the method of detecting defective pixels described in this embodiment is applicable to the display device 10 with a pixel density of 100. In addition, the HMD can be suitably applied even when the temperature is high. Since the distance between the defective pixels is short, the user can easily see the defective pixels. The image data can be corrected so that the defective pixels are less visible to the user. Therefore, the display device 10 can be suitably applied to an HMD or the like.

[0110] When the electronic device 100 is used as an HMD or the like, the user is likely to experience eye strain. The device 100 has a function of measuring the user's eye strain and notifying the user of information according to the measurement result. It is preferred that the compound has the following structure:

[0111] FIG. 9B shows a function of measuring eye strain of a user in an electronic device 100 to which the display device 10 is applied. 10 is a diagram showing an example of the configuration of a pixel 36 provided in a sensor unit 35 when the electronic device has When the image forming apparatus 100 has a function of measuring the user's eye strain, the pixel 36 includes a photoelectric conversion element 83 In addition, the light emitting element 85 can be provided. The light emitting element 85 has a function of emitting light 86. As the light-emitting element 85, an organic light-emitting element, an LED element, etc. can be used. In the specification, the light 86 is referred to as detected light.

[0112] The light emitting element 85 preferably has a function of emitting infrared light. Infrared light is invisible to the human eye. Therefore, by using infrared light as the light emitted by the light emitting element 85, the electronic device 1 Since the user of the device 00 can be prevented from seeing the light emitted by the light-emitting element 85, it is possible to This can prevent a decrease in the sense of immersion and realism.

[0113] FIG. 10A shows the eyes 171 (eyeballs 171R and 171L) of the user of the electronic device 100. 17A and 17B are diagrams showing the positional relationship of the display unit 33. The image displayed on the display unit 33 is an image of the eyeball 171R. and is visible by eyeball 171L.

[0114] FIG. 10B shows an eyeball 171 of a user of the electronic device 100, the display unit 33, and the sensor unit 35. FIG.

[0115] A part of the light 86 that is the detection light of the sensor unit 35 is incident on the eyeball 171 and the eye of the user of the electronic device 100. And / or reflected by the eyelid (not shown) and incident on the sensor unit 35 as light 84. A part of the light 86, which is the detection light emitted from the light emitting element 85 of the sensor unit 35, is electrons. The light is reflected by the eyeball 171 and / or eyelid of the user of the device 100 and is output to the sensor unit 35 as light 84. When the user of the electronic device 100 blinks, the light is incident on the photoelectric conversion element 83. The luminance of the light 84 incident on the sensor unit 35 changes. The presence or absence of blinking can be detected from the change in brightness of the light 84 detected by 83.

[0116] As described above, the display device 10 uses the photoelectric conversion element 83 provided in the sensor unit 35. Therefore, the display device 10 can detect defective pixels by and a photoelectric conversion element used in the display device 10, and an electronic device 100 using the display device 10 to reduce eye strain in a user. It can also serve as a photoelectric conversion element used for detection.

[0117] <An example of how to measure eye strain> An example of a method for measuring eye strain using the electronic device 100 will be described with reference to the drawings. Measurement of eye strain based on the number of times can be done continuously while images are displayed, but it should be done at regular intervals. By performing the measurement at regular intervals, the power consumption of the electronic device 100 can be reduced. In this embodiment, an example in which eye strain is measured at regular intervals will be described. .

[0118] Eye strain can be measured in Mode 1 or Mode 2. Mode 2 can also be used in combination.

[0119] [Mode 1] First, the measurement flow for Mode 1 will be explained. Figure 11 shows the flow for explaining the operation of Mode 1. -Chart shown.

[0120] After the image display starts and a period T has elapsed (step S01), the sensor unit 35 emits detection light. (Step S02). The period T can be set to any time. If the fatigue measurement interval is too long, the detection of eye strain will be delayed, resulting in a reduced effect of reducing fatigue. The period T is preferably 15 minutes or more and 2 hours or less, and 10 minutes or more and 1 hour or less. More preferably, the time is 5 minutes or more and 30 minutes or less.

[0121] Next, the number of blinks per minute is measured (step S03). For example, the number of times measured for 30 seconds may be converted to the number per minute, or the number of times measured for 3 minutes may be converted to the number per minute. The number of measurements obtained may be converted to per minute. The longer the measurement time, the higher the measurement accuracy. Furthermore, the measurement time is preferably 15 seconds or more and less than the period T.

[0122] The blink count can be measured for either the left or right eye, or for both eyes. If measurements are taken for both eyes, the more frequent measurement of either eye is used.

[0123] Next, the accumulation level of eye strain is determined (step S04). The accumulation level is determined based on the number of times per minute. The number of blinks per minute ( Hereafter, it will be simply referred to as "number of blinks." If the number of blinks is between 10 and 30, fatigue is not accumulated. If the blink rate is 30 or less, it is judged as A. If the blink rate is 30 or more, fatigue is accumulated. If the blink rate is 40 or more, the fatigue level is considered to be extremely high. If the blink count is less than 10, the data is judged to be C. Since there is a risk of eyelid irritation, the grade is D. Also, if the number of blinks is less than 5, Since there is a high possibility that the person is not watching or recognizing the video, it is judged as E.

[0124] Next, it is determined whether the determination result is other than A (step S05). If the determination result is A Then, the irradiation of the detection light is stopped (step S10), and the process returns to step S01.

[0125] If the judgment result is other than A, the judgment result is compared with the judgment table 2 shown in FIG. 12B. Warning information corresponding to the determination result is displayed on the display unit 33 (step S06. See FIG. 12C). ).

[0126] Next, it is determined whether or not to stop the image display (step S07). If selected, the image display is stopped (step S08) and the irradiation of the detection light is stopped (step S09). If the image display is not to be stopped, the irradiation of the detection light is stopped (step S10). Then, the process returns to step S01.

[0127] [Mode 2] Next, we will explain the measurement flow of Mode 2. Figure 13 shows the flow for explaining the operation of Mode 2. Mode 2 has the same steps as Mode 1. To reduce the amount of explanation, explanations of steps similar to those in Mode 1 may be omitted.

[0128] It is said that the normal number of blinks for a person is 15 to 20 times. The number of times varies depending on the individual. In Mode 2, before measuring eye strain, the reference electronic device The number of blinks of 100 users (also called the "reference number of blinks") is measured. The measured blink count is compared with a reference blink count to determine the degree of fatigue accumulation of the user of the electronic device 100. For example, it is necessary to determine how many times the newly measured blink rate is compared to the reference blink rate ("blink rate"). The accumulated fatigue level of the user of the electronic device 100 is determined by calculating the accumulated fatigue level (also referred to as a "magnification factor").

[0129] First, after the image display is started, the reference number of blinks is measured (Step S11). In step S01, for example, the detection light of the sensor unit 35 is irradiated, and the number of blinks is counted in the same manner as in step S03. Measure.

[0130] After step S11 is completed, step S01, step S02, step S03, step S In mode 2, the fatigue accumulation level is determined (step S04) based on the blink magnification and This is done by comparing the decision table 3 shown in 14A.

[0131] In mode 2, if the blink rate is between 0.7 and 2.0, there is little or no fatigue accumulation. If the blink rate is 2.0 or more, fatigue is accumulated. If the blink rate is 2.3 times or more, fatigue is extremely high. If the blink magnification is less than 0.7, the driver Since there is a risk of eye contact, it is judged as D. Also, if the blink magnification is less than 0.4 times, is judged as E because there is a high possibility that the person is not watching or recognizing the video.

[0132] Next, step S05 is performed. If the determination result is other than A, the determination result is shown in FIG. 12B. The result of the judgment is compared with the judgment table 2, and warning information corresponding to the judgment result is displayed on the display unit 33 ( Step S06. See Figure 14B.

[0133] Mode 1 and Mode 2 may be used in combination as appropriate. For example, when operating in mode 2, the reference blink count is 30. If the number of times is more than the number of times, the operation may be temporarily performed in mode 1 and warning information may be displayed on the display unit 33.

[0134] In addition, in this embodiment, warning information according to the accumulated degree of eye strain is displayed based on the number of blinks. However, one aspect of the present invention is not limited to this. The device may have a function to issue a warning sound depending on the degree of accumulation of eye strain. The display unit 33 may have a function to adjust the luminance of the light emitted from the display unit 33 depending on the above.

[0135] The electronic device 100 also includes a temperature sensor, a pressure sensor, a pulse sensor, and a SpO2 (blood oxygen saturation) sensor. Various sensors such as a temperature sensor may be provided. Alternatively, the electronic device 100 may acquire biological information of the user and determine the accumulated fatigue level of the user.

[0136] <Display device configuration example 2> FIG. 15 is a block diagram showing an example of the configuration of the display device 10 shown in FIG. 1A. The display device 10 shown in FIG. 15 has a memory section 37 in the layer 30. However, this differs from the display device 10 having the configuration shown in FIG. 1A.

[0137] The memory section 37 has an array of cells 38. The cells 38 have the function of storing data. The memory unit 37 may be provided with a volatile memory such as a DRAM or an SRAM. In addition, ReRAM, PRAM, FeRAM, MRAM, flash memory, etc. Volatile memory may also be provided.

[0138] The cell 38 is a transistor having a metal oxide in the channel formation region (hereinafter referred to as an OS transistor). The band gap of the metal oxide is 2 The OS transistor can be non-conductive. In the ON state, the leakage current (OFF current) is extremely small. By providing the S transistor, the configuration of the cell 38 can be simplified while the memory section 3 The memory provided in the 7 can be a non-volatile memory. For example, A cell consisting of a register and one capacitance element can hold one bit of data for a long period of time. can be done.

[0139] As metal oxides, In-M-Zn oxides (element M is aluminum, gallium, or zinc) Sodium, tin, copper, vanadium, beryllium, boron, titanium, iron, nickel, germanium Zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum tungsten, magnesium, or the like) In particular, the element M may be aluminum, gallium, yttrium, or tin. In addition, metal oxides such as indium oxide, zinc oxide, In-Ga oxide, and I n-Zn oxide, Ga-Zn oxide, or gallium oxide may also be used.

[0140] By configuring the display device 10 as shown in FIG. 15, for example, the display device 10 shown in FIG. When operating in mode 2, the data representing the reference number of blinks measured in step S11 is recorded. This reduces the frequency of the operation of step S11. For example, after the operation of step S10, the operation of step S11 can be performed. This allows the operation of step S01 to be performed without performing the above steps. Power consumption can be reduced.

[0141] <Configuration example 3 of the display device> In FIG. 1A, one gate driver circuit 21 and one data driver circuit 22 are provided on a layer 20. 1, a configuration example in which one display unit 33 is provided on the layer 30 is shown. In other words, the display unit provided on the layer 30 may be divided. 1A, in which the layer 30 is provided with three rows and three columns of display units 33. 1 shows an example of the configuration of the display device 10. The layer 30 is provided with two rows and two columns of display units 33. Alternatively, the display units 33 may be arranged in four rows and four columns or more. The number of rows and columns of the display unit 33 provided in the display device shown in FIG. In the device 10, for example, all the display units 33 can be used to display one image.

[0142] In FIG. 16, the wiring 31 and the wiring 32 are omitted for clarity of the drawing. The display device 10 having the configuration shown in FIG. 16 is provided with wiring 31 and wiring 32. Although the electrical connections of the functional circuit 40 are omitted, the functional circuit 40 is actually a gated a driver circuit 21, a data driver circuit 22, and pixels 36 provided in a sensor section 35. In other figures, some components are omitted as in FIG. 16. This may be the case.

[0143] The layer 20 includes a gate driver circuit 21 and a data driver circuit 22, for example, a display unit 33. In this case, the gate driver circuit 21 can be provided in the same number as the gate driver The circuit 21 may be provided so as to overlap with a display portion 33 provided with pixels 34 to which signals are supplied. In addition, the data driver circuit 22 can be configured to receive image data. It can be provided so as to overlap the display section 33 in which the pixels 34 to be supplied are provided.

[0144] A plurality of display units 33 are provided, and gate driver circuits 21 and data driver circuits By providing the pixel 22, the number of pixels 34 provided in one display unit 33 can be reduced. The plurality of gate driver circuits 21 can be operated in parallel. The plurality of data driver circuits 22 can be operated in parallel. Therefore, for example, the image data corresponding to one frame of image is written to the pixel 34. Therefore, the length of one frame period can be shortened. This allows the operation of the display device 10 to be speeded up. 34, the pixel density of the display device 10 can be increased. The definition of an image that can be displayed by the display device of one embodiment of the present invention is improved by the gate driver. The display device is configured so that the data buffer circuit and data driver circuit do not overlap with the display unit. Furthermore, the clock frequency can be reduced, which increases the image resolution. This allows the power consumption of the display device 10 to be reduced.

[0145] Here, in the case where the gate driver circuit and the data driver circuit are configured so as not to overlap with the display section, In this case, the gate driver circuit and the data driver circuit may be provided, for example, on the periphery of the display unit. In this case, providing more than two rows and two columns of display sections will increase the size of the data driver circuit. On the other hand, in the display device 10, the gate driver circuit and the data By providing the driver circuit on a layer different from the layer on which the display unit is provided, Therefore, as shown in FIG. 16, the area can be more than two rows and two columns. That is, the display device 10 can be provided with a gate driver circuit and a display unit. Five or more data driver circuits can be provided for each.

[0146] As described above, the display device 10 has a gate driver circuit and a data driver circuit that overlap with the display unit. Therefore, the display device 1 can be operated at a higher speed than a display device having a non-volatile memory. 0 pixel density, the gate driver circuit and data driver circuit do not overlap with the display area For example, the pixel density of the display device 10 can be increased to 1000 ppi. It can be 5000 ppi or more, and can be 7000 ppi or more. Therefore, it is possible to display a high-quality image with less graininess on the display device 10. This allows for the display of highly realistic images.

[0147] The resolution of the image that can be displayed by the display device 10 is also controlled by the gate driver circuit and The display device can be configured so that the data driver circuit does not overlap the display unit. For example, the display device 10 can support 4K2K, 8K4K, or In addition, the display device 10 can be made smaller. For example, the size of the display area of the display device 10 can be set to 8 inches or less. Cut.

[0148] The layer 20 is provided with a plurality of data driver circuits 22 and the like, and the layer 30 is provided with a plurality of display units 33. Even in the configuration in which the display device 10 is provided with the above-mentioned components, the functional circuits provided in the display device 10 can be used in the same manner as in the case shown in FIG. 1A. The number of circuits 40 can be one. Therefore, as shown in FIG. The functional circuit 40 can be provided so as not to overlap any of the display units 33. Alternatively, the display unit 33 may be provided so as to have an area overlapping with either of the display units 33.

[0149] FIG. 16 shows an example of a configuration in which the number of gate driver circuits 21 is the same as the number of display units 33. However, one embodiment of the present invention is not limited to this. The configuration of the display device 10 when the number of the gate driver circuits 21 is the same as the number of columns of the display unit 33 is The display device 10 having the configuration shown in FIG. 17 is provided with three columns of display units 33. Therefore, three gate driver circuits 21 are provided. Also, three rows of display units 33 are provided. The display sections 33 are arranged in three rows and one column, and one gate driver circuit 21 is shared by the display sections 33 .

[0150] FIG. 18 shows a modified example of the configuration shown in FIG. 16, in which a plurality of display units 33 are provided and the gate driver 18 shows an example of the configuration of the display device 10 when one buffer circuit 21 is provided. In the display device 10 having the above configuration, the display units 33 arranged in three rows and three columns share one gate driver circuit 21. In the display device 10 having the configuration shown in FIG. It can be configured so that it does not overlap with the part 33.

[0151] Although not shown, the same number of data driver circuits 22 as the number of display units 33 must be provided. The number of data driver circuits 22 included in the display device 10 may be determined based on the number of data driver circuits 22 provided in the display device 10. The number of display units 33 may be greater or less than the number of display units 33 that are to be installed.

[0152] FIG. 1A shows an example of a configuration in which one display unit 33 and one data driver circuit are provided. However, the number of data driver circuits 22 may be greater than the number of display units 33. This is a modified example of the configuration shown in FIG. 1, in which two data driver circuits (data 1. A configuration example of the display device 10 when a driver circuit 22a and a data driver circuit 22b are provided. This shows:

[0153] The data driver circuit 22a and the data driver circuit 22b are Similarly, it has an area overlapping with the display unit 33. For example, the data driver circuit 22a and The data driver circuit 22b is a circuit that overlaps with the pixel 34, similar to the data driver circuit 22. The data driver circuit 22a is clearly distinguishable from the gate driver circuit 21. The data driver circuit 22b has an overlapping region 23a. , the gate driver circuit 21 and the gate driver circuit 22 are not clearly separated from each other, but have an overlapping region 23b.

[0154] As shown in FIG. 19, by providing more data driver circuits than display units 33, the data This allows the density of transistors that make up the data driver circuit to be reduced. This increases the degree of freedom in the layout of the display device 10.

[0155] FIG. 1A shows an example of a configuration in which one display unit 33 and one gate driver circuit are provided. However, the number of gate driver circuits may be greater than the number of display units 33. This is a modified example of the configuration, in which two gate driver circuits (gate drivers) are provided for one display unit 33. 1 shows a configuration example of a display device 10 when a gate driver circuit 21a and a gate driver circuit 21b are provided. are.

[0156] In the display device 10 having the configuration shown in FIG. 20, the pixels 34 in the odd-numbered rows are connected to the gate via the wiring 31a. The pixels 34 in the even-numbered rows are electrically connected to the driver circuit 21a via the wiring 31b. The wiring 31a and the wiring 31b are electrically connected to the gate driver circuit 21b. It functions as a scanning line in the same way as 1.

[0157] The gate driver circuit 21a generates signals for controlling the operation of the pixels 34 in the odd-numbered rows. The gate driver circuit has a function of supplying the signal to the pixel 34 via the wiring 31a. 21b generates a signal for controlling the operation of the pixels 34 in the even-numbered rows, and transmits the signal via the wiring 31b. The signal is supplied to the pixel 34 via the pixel 34 .

[0158] The gate driver circuit 21a and the gate driver circuit 21b are Similarly, it has an area overlapping with the display unit 33. For example, the gate driver circuit 21a and The gate driver circuit 21b is arranged in the area overlapping with the pixel 34, similar to the gate driver circuit 21. The gate driver circuit 21a is clearly distinguishable from the data driver circuit 22. The gate driver circuit 21b has an overlapping region 23a. , the data driver circuit 22 is not clearly separated from the data driver circuit 22, and has an overlapping region 23b.

[0159] In the display device 10 having the configuration shown in FIG. 20, the gate driver circuit 21a is operated to drive the odd-numbered rows. After writing image data to all the pixels 34, the gate driver circuit 21b is operated. Image data can be written to all pixels 34 in the even-numbered rows. The display device 10 having this configuration can be operated in an interlaced format. By operating in a race mode, the operation of the display device 10 can be accelerated and the frame frequency can be increased. In addition, the number of pixels 34 to which image data is written in one frame period can be increased. The number of pixels can be reduced to half that when the display device 10 is operated in the progressive mode. Therefore, when the display device 10 is operated in the interlaced mode, the progressive mode can be used. Since the clock frequency can be made smaller than when operating using the drive method, This allows the power consumption of the device 10 to be reduced.

[0160] FIG. 1A shows an example of a configuration in which only one end of the wiring 32 is connected to the data driver circuit 22. However, the wiring 32 may be connected to the data driver circuit 22 at multiple locations. 1 shows the state of the display device 10 when the data driver circuit 22 is connected to both ends of the wiring 32. 1 shows an example of the configuration. By connecting multiple points of the wiring 32 to the data driver circuit 22, This makes it possible to suppress signal delays and the like caused by wiring resistance, parasitic capacitance, and the like. This allows the operation of the display device 10 to be speeded up.

[0161] In addition to one end and the other end of the wiring 32, other portions of the wiring 32 are connected to the data driver circuit 2. For example, the center of the wiring 32 may be connected to the data driver circuit 22. The number of connections between the wiring 32 and the data driver circuit 22 may be increased. This makes it possible to further suppress signal delays and the like, and to further speed up the operation of the display device 10. For example, one end of the wiring 32 and the center of the wiring 32 may be connected to the data line. The other end of the wiring 32 is connected to the data driver circuit 22. It's okay.

[0162] In addition, when one data driver circuit 22 is connected to multiple locations on the wiring 32, As shown in FIG. 1, the area occupied by the data driver circuit 22 increases. The data driver circuit 22 is stacked so as to have an area overlapping the display unit 33. Therefore, it is possible to prevent the display device 10 from becoming large. The entire circuit 21 is overlapped with the data driver circuit 22 without being clearly separated. Even when the data driver circuit 22 is connected to multiple points on the wiring 32, the gate driver Alternatively, only a portion of the data driver circuit 21 may overlap with the data driver circuit 22 .

[0163] It should be noted that multiple locations of the wiring 31 may be connected to one gate driver circuit 21. This also makes it possible to suppress signal delays and the like, and to speed up the operation of the display device 10. When such a configuration is adopted, the occupied area is large, similar to the data driver circuit 22 shown in FIG. However, the gate driver circuit 21 is stacked so as to have an area overlapping the display section 33. Since the display device 10 is provided with the reflective layer 14, it is possible to prevent the display device 10 from becoming large.

[0164] The configurations shown in FIGS. 1A to 21 can be combined as appropriate. For example, the configuration shown in FIG. 20. In this case, the display device 10 may be configured as follows: For example, a plurality of display units 33 are provided, and the number of gate driver circuits is double the number of the display units 33. In this case, the number of data driver circuits 22 provided can be the same as the number of display units 33 provided.

[0165] <Configuration example of gate driver circuit 21> FIG. 22 is a block diagram showing an example of the configuration of the gate driver circuit 21. The circuit 21 has a register circuit R consisting of a plurality of set-reset flip-flops. The register circuit R is electrically connected to the wiring 31 that functions as a scanning line. , and has a function of outputting a signal to the wiring 31.

[0166] The signal RES is a reset signal, and by setting the signal RES to a high potential, for example, the register circuit The signal SP is a start pulse signal, and the corresponding By inputting a signal to the gate driver circuit 21, a shift operation by the register circuit R is performed. The signal PWC is a pulse width control signal, and the resistor circuit R is connected to the 31. Signal CLK[1], signal CLK [2], signal CLK[3], and signal CLK[4] are clock signals. The clock circuit R receives, for example, two signals from the signals CLK[1] to CLK[4]. It is possible.

[0167] In the configuration shown in FIG. 22, the wiring 31 electrically connected to the register circuit R is By doing so, it can also be applied to the register circuit etc. included in the data driver circuit 22. can.

[0168] FIG. 23A shows a signal input to the register circuit R and a signal output from the register circuit R. 23A is a diagram showing the clock signals CLK[1] and CLK[2]. 10 shows the case where the signal CLK[3] is input.

[0169] The signal FO is an output signal, for example, a signal output to a wiring 31. The signal ROUT is a signal This signal can be used as the signal LIN to be input to the register circuit R in the next stage. Among the signals shown in FIG. 23A, the signals RES, PWC, CLK[1], and CL K[3] and signal LIN are signals input to the register circuit R, and signals FO and The signal ROUT is a signal output from the register circuit R.

[0170] FIG. 23B is a circuit diagram showing an example of the configuration of a register circuit R whose input and output signals are the signals shown in FIG. 23A. The register circuit R includes transistors 51 to 63 and a capacitor 64. to a capacitor 66.

[0171] One of the source and drain of transistor 51 is connected to the source and drain of transistor 52. one of the input terminals, one of the source or drain terminal of transistor 56, and one of the source or drain terminal of transistor 59. The gate of transistor 52 is electrically connected to either the source or the drain of transistor 53. One of the source or drain of the transistor 53, one of the source or drain of the transistor 54, One of the source and drain of the transistor 55, the gate of the transistor 58, the transistor The gate of the transistor 56 is electrically connected to the gate of the transistor 61 and one electrode of the capacitor 64. The other of the source and drain of the transistor 57 is connected to the gate of the transistor 57 and one of the capacitors 65. The other of the source and drain of the transistor 59 is electrically connected to the The gate of the transistor 60 is electrically connected to one electrode of the capacitor 66. One of the source or drain of the transistor 60 is connected to one of the source or drain of the transistor 61. The gate of the transistor 62 and the other electrode of the capacitor 66 are electrically connected.

[0172] A signal LIN is input to the gate of the transistor 51 and the gate of the transistor 55. The signal CLK[3] is input to the gate of the transistor 53. A signal RES is input to the gate of the transistor 57. The signal CLK[1] is input to the other of the source and drain of the transistor 60. The signal PWC is input.

[0173] One of the source or drain of transistor 62 and the source or drain of transistor 63 One of the inputs is electrically connected to the wiring 31, and as described above, the signal F The other of the source or drain of the transistor 57 and the source of the transistor 58 are connected to each other. A signal ROUT is output from one of the source or drain electrodes and the other electrode of the capacitance element 65. can be.

[0174] The other of the source or drain of the transistor 51, the source or drain of the transistor 53 the other of the source or drain of transistor 54, the gate of transistor 56, The gate of the transistor 59 and the other of the source and drain of the transistor 62 are connected to a potential The other of the source and drain of the transistor 52 is connected to the power supply VDD. the other of the source or drain of transistor 58, the other of the source or drain of transistor the other of the source or drain of transistor 61, the other of the source or drain of transistor 63, The other electrode of the capacitor 64 is supplied with a potential VSS.

[0175] A bias potential Vbias is supplied to the gate of the transistor 63. ias is a potential at which the transistor 63 operates in the saturation region. The transistor 63 can function as a constant current source.

[0176] The transistor 62 and the transistor 63 form a source follower circuit 67. By providing a source follower circuit 67 in the register circuit R, Even if signal attenuation occurs due to wiring resistance, parasitic capacitance, etc., the signal F This can suppress the decrease in the potential of the display device 10, thereby increasing the speed of the operation of the display device 10. If the source follower circuit 67 has a function as a buffer, A circuit other than a source follower circuit may also be used.

[0177] <Configuration example of area 23> FIG. 24 shows an area 2 where the gate driver circuit 21 and the data driver circuit 22 overlap. 24 is a diagram showing a configuration example of the gate driver circuit 23. As shown in FIG. a region having elements constituting the data driver circuit 22; In FIG. 24, the gate driver circuit 21 is configured as follows. The transistor 71 is shown as an element that constitutes the data driver circuit 22. Transistor 72 is shown.

[0178] In FIG. 24, the regions having elements that constitute the gate driver circuit 21 are set in the first and third rows. The second and fourth rows are provided with regions having elements that constitute the data driver circuit 22. In the region 23, the elements that constitute the gate driver circuit 21 are included. Dummy elements are provided between the respective regions. Dummy elements are provided between each region having a corresponding element. Dummy transistors 73 are provided as dummy elements on all four sides of transistor 1 and on all four sides of transistor 72. 1 shows an example of the configuration of the region 23 when it is provided.

[0179] By providing a dummy element such as a dummy transistor 73 in the region 23, the dummy element absorbs impurities, and the impurities diffuse into the transistors 71 and 72. This can improve the reliability of the transistors 71 and 72. This can improve the reliability of the display device 10. A transistor 71, a transistor 72, and a dummy transistor 73 are arranged in a matrix. However, they do not have to be arranged in a matrix.

[0180] 25 is a top view showing an example of the configuration of region 70, which is a part of region 23. As shown in FIG. 1, the region 70 includes one transistor 71, one transistor 72, and one dummy transistor. As shown in FIG. 25, the transistor 71 is It has a channel forming region 110, a source region 111, and a drain region 112. In addition, the gate electrode 113 is provided so as to have a region overlapping with the channel formation region 110 .

[0181] In FIG. 25, components such as a gate insulator are omitted. The hole formation region, source region, and drain region are not clearly separated.

[0182] An opening 114 is provided in the source region 111, and the source region 111 is is electrically connected to the wiring 115. An opening 116 is provided in the drain region 112, The drain region 112 is electrically connected to a wiring 117 through the opening 116 .

[0183] An opening 118 is provided in the gate electrode 113, and the gate electrode 113 is The wiring 115 is electrically connected to the wiring 121. An opening 119 is provided in the wiring 115. The wiring 115 is electrically connected to the wiring 122 through the opening 12. 0 is provided, and the wiring 117 is electrically connected to the wiring 123 through the opening 120. That is, the source region 111 is electrically connected to the wiring 122 via the wiring 115, and the drain region The region 112 is electrically connected to the wiring 123 via the wiring 117 .

[0184] The transistor 72 includes a channel forming region 130, a source region 131, and a drain region 132. 32. Also, the gate electrode 32 is formed so as to have an area overlapping with the channel forming region 130. It has an electrode 133.

[0185] An opening 134 is provided in the source region 131, and the source region 131 is is electrically connected to the wiring 135. An opening 136 is provided in the drain region 132, The drain region 132 is electrically connected to a wiring 137 through the opening 136 .

[0186] An opening 138 is provided in the gate electrode 133, and the gate electrode 133 is The wiring 135 is electrically connected to the wiring 141. An opening 139 is provided in the wiring 135. The wiring 135 is electrically connected to the wiring 142 through the opening 14. 0 is provided, and the wiring 137 is electrically connected to the wiring 143 through the opening 140. That is, the source region 131 is electrically connected to the wiring 142 via the wiring 135, and the drain region The region 132 is electrically connected to a wiring 143 via a wiring 137 .

[0187] The channel forming region 110 and the channel forming region 130 are provided in the same layer. In addition, the source region 111 and the drain region 112, and the source region 131 The gate electrode and the drain region 132 can be provided in the same layer. The wiring 113 and the gate electrode 133 can be provided in the same layer. The wiring 15 and the wiring 117, and the wiring 135 and the wiring 137 may be provided in the same layer. That is, the transistor 71 and the transistor 72 are provided in the same layer. This allows the transistor 71 and the transistor 72 to be different from each other. The manufacturing process of the display device 10 can be simplified compared to when the display device 10 is provided on a layer. It can be made low-cost.

[0188] The wiring 121 electrically connected to the transistor 71 that constitutes the gate driver circuit 21 The wirings 123 are provided in the same layer. The wirings 141 to 143 electrically connected to the transistor 72 are the same as each other. Furthermore, the wirings 121 to 123 are provided in the layers of the wirings 141 to 144. 3. As a result, the elements constituting the gate driver circuit 21 are A transistor 71 is a component of the data driver circuit 22. Therefore, the gate driver circuit 21 and the data Even if the driver circuits 22 are not clearly separated and have overlapping areas, the gate driver circuits This can prevent malfunctions of the display device 21 and the data driver circuit 22. This can improve the reliability of the device 10.

[0189] In this specification, the term "the same layer as A" refers to, for example, the same layer formed in the same process as A. It means a layer having one material.

[0190] In FIG. 25, wirings 141 to 143 are provided above wirings 121 to 123. The wiring 121 to the wiring 123 are arranged in a layer below the wiring 141 to the wiring 143. may be provided.

[0191] In addition, in FIG. 25, the wirings 121 to 123 extend in the horizontal direction, and the wirings 141 to 143 extend in the horizontal direction. Although 43 shows a configuration in which the film extends in the vertical direction, one embodiment of the present invention is not limited to this. For example, the wirings 121 to 123 are extended vertically, and the wirings 141 to 143 are extended horizontally. Alternatively, the wirings 121 to 123 and the wirings 141 to 144 may be configured to extend in the same direction. Both of the wirings 143 may extend horizontally or vertically.

[0192] The dummy transistor 73 includes a semiconductor 151 and a conductor 152. The semiconductor 151 has an area overlapping the transistor 71 and the semiconductor 151. The conductor 152 can be formed in the same layer as the channel forming region of the conductor 72. The gate electrodes of the transistors 71 and 72 can be formed in the same layer. The dummy transistor 73 does not have either the semiconductor 151 or the conductor 152. This may also be configured as follows.

[0193] The semiconductor 151 and the conductor 152 may be configured not to be electrically connected to other wirings or the like. A constant potential may be applied to the semiconductor 151 and / or the conductor 152. For example, A ground potential may be supplied.

[0194] <Configuration example of pixel 34> 26A to 26E illustrate the colors exhibited by the pixels 34 provided in the display device 10. As shown in FIG. 26A, a pixel 34 having a function of emitting red light (R), a pixel 35 having a function of emitting green light (G), and a pixel 36 having a function of emitting red light (R) are shown. a pixel 34 having a function of emitting color light (G), and a pixel 35 having a function of emitting blue light (B); Pixel 34 can be provided in display device 10. Alternatively, as shown in FIG. 26B, Pixel 34 having a function of emitting light of color C), and pixel 35 having a function of emitting light of color M. The display device 10 is provided with a pixel 34 and a pixel 34 having a function of emitting yellow (Y) light. It may also be used.

[0195] Alternatively, as shown in FIG. 26C, a pixel 34 having a function of emitting red light (R) and a pixel 35 having a function of emitting green light ( a pixel 34 having a function of emitting blue light (B); The display device 10 may also be provided with pixels 34 that have the function of emitting white light (W). Alternatively, as shown in FIG. 26D, a pixel 34 having a function of emitting red light (R) and a pixel 35 having a function of emitting green light (G) may be used. A pixel 34 having a function of emitting light (G), a pixel 3 having a function of emitting blue light (B), 4, and a pixel 34 having a function of emitting yellow (Y) light. Alternatively, as shown in FIG. 26E, a pixel having a function of emitting cyan (C) light may be used. 34, a pixel having a function of emitting magenta (M) light; 34, a pixel having a function of emitting yellow (Y) light; The pixel 34 having the function of emitting white light (W) and the pixel 34 having the function of emitting white light (W) are included in the display device 1. It may be set to 0.

[0196] As shown in FIGS. 26C and 26E, a pixel 34 having a function of emitting white light (W) is displayed. By providing the display device 10 with the LED, the brightness of the displayed image can be increased. As shown in D, the number of colors that the pixel 34 can display is increased, thereby improving the reproducibility of intermediate colors. This allows for improved display quality.

[0197] As shown in FIG. 26F, the display device 10 is a display device having a function of emitting red light (R). a pixel 34 having a function of emitting green light (G), and a pixel 34 having a function of emitting blue light (B). In addition to the pixel 34 having the function of emitting infrared light (IR), the pixel 34 may have a function of emitting infrared light (IR). Alternatively, as shown in FIG. 26G, the display device 10 may have a function of emitting cyan (C) light. a pixel 34 having a function of emitting magenta (M) light; a pixel 34 having a function of emitting yellow (Y) light; In addition to the pixel 34 having the function of emitting infrared light (IR), In addition to the pixels 34 shown in FIGS. 26F and 26G, the display device 10 may also have white It may also have pixels 34 that have the function of emitting color light (W).

[0198] 27A to 27C are circuit diagrams showing examples of the configuration of the pixel 34. The pixel 34 includes a liquid crystal element 570 , a transistor 550 , and a capacitor 560 . Here, the element corresponding to the display element 81 shown in FIG. 1B is the liquid crystal element 570. In addition to the wiring 31 and the wiring 32, wiring 39 and the like are electrically connected to 34.

[0199] The potential of one electrode of the liquid crystal element 570 is set appropriately according to the specifications of the pixel 34. The orientation state of the pixel 570 is set by the image data written to the pixel 34. A common potential (common potential) is applied to one electrode of the liquid crystal element 570 of each of the pixels 34. ) may be supplied to one electrode of the liquid crystal element 570 of the pixel 34 in each row. may be supplied.

[0200] The pixel 34 having the configuration shown in FIG. 27B includes a transistor 552 and a transistor 554. 1B, the display element 81 has a capacitance element 562 and a light-emitting element 572. The element corresponding to this is the light emitting element 572. The light emitting element 572 may be, for example, an electro An EL element that utilizes luminescence can be applied. Between the pair of electrodes, there is a layer containing a light-emitting compound (hereinafter also referred to as an EL layer). When a potential difference greater than the threshold voltage of the EL element is generated, holes are injected into the EL layer from the anode side. The injected electrons and holes are recombined in the EL layer. The light-emitting material contained in the EL layer emits light.

[0201] EL elements are also classified according to whether the light-emitting material is an organic compound or an inorganic compound. Generally, the former is called an organic EL element, and the latter is called an inorganic EL element.

[0202] When a voltage is applied to an organic EL element, electrons are emitted from one electrode and holes are emitted from the other electrode. are injected into the EL layer, and then the carriers (electrons and holes) recombine. This causes the luminescent organic compound to form an excited state, and when this excited state returns to the ground state, Due to this mechanism, such a light-emitting element is called a current-excited light-emitting element. It is called.

[0203] In addition to the light-emitting compound, the EL layer may contain a material having a high hole injection property and a material having a high hole transport property. , hole blocking material, material with high electron transporting properties, material with high electron injecting properties, or bipolar material The layer may contain a substance (a substance having high electron-transporting and hole-transporting properties), or the like.

[0204] The EL layer can be produced by deposition (including vacuum deposition), transfer, printing, inkjet, coating, etc. It can be formed by the method described above.

[0205] Inorganic EL elements are divided into dispersion-type inorganic EL elements and thin-film-type inorganic EL elements depending on the element structure. Dispersion-type inorganic EL elements have a light-emitting layer in which particles of light-emitting material are dispersed in a binder. The emission mechanism is a donor-acceptor interaction that utilizes the donor and acceptor levels. Thin-film inorganic EL devices sandwich the light-emitting layer between dielectric layers. Furthermore, this structure is sandwiched between electrodes, and the light emission mechanism utilizes the inner-shell electron transition of metal ions. It is a localized emission that uses

[0206] The light emitting element only needs to have at least one of the pair of electrodes transparent in order to extract light. The transistor and the light emitting element are formed on the substrate, and light is emitted from the surface opposite to the substrate. The top emission structure emits light from the top surface, while the bottom emission structure emits light from the bottom surface. Dual emission structure that emits light from both sides ) structure, and any light emitting element with any emission structure can be applied.

[0207] For light-emitting elements other than the light-emitting element 572, elements similar to the light-emitting element 572 are used. It is possible.

[0208] One of the source and the drain of the transistor 552 is electrically connected to the wiring 32. The other of the source and the drain of the transistor 552 is connected to one electrode of a capacitor 562 and The other electrode of the capacitor 562 is electrically connected to the gate of the transistor 554. The gate of the transistor 552 is electrically connected to the wiring 31. One of the source and the drain of the transistor 554 is electrically connected to the wiring 39a. The other of the source and drain of the transistor 554 is connected to one of the electrodes of the light emitting element 572. The other electrode of the light emitting element 572 is electrically connected to the wiring 39b. The potential VSS is supplied to the wiring 39a, and the potential VDD is supplied to the wiring 39b. The wiring 39a and the wiring 39b function as power supply lines.

[0209] In the pixel 34 having the configuration shown in FIG. 27B, the transistor 554 is turned on in response to the potential supplied to the gate of the transistor 554. Therefore, the current flowing through the light emitting element 572 is controlled, and the light emitted from the light emitting element 572 is The brightness is controlled.

[0210] FIG. 27C shows a different configuration from the pixel 34 shown in FIG. 27B. In the element 34, one of the source and drain of the transistor 552 is electrically connected to the wiring 32. The other of the source and the drain of the transistor 552 is connected to one of the capacitors 562. The other electrode of the transistor 552 is electrically connected to the gate of the transistor 552 and the gate of the transistor 554. The gate of the transistor 554 is electrically connected to the wiring 31. One of the source and drain electrodes of the transistor 554 is electrically connected to the wiring 39a. The other electrode of the capacitor 562 and the other electrode of the light-emitting element 572 are electrically connected to each other. The other electrode of the light emitting element 572 is electrically connected to the wiring 39b. The potential VDD is supplied to the wiring 39a, and the potential VSS is supplied to the wiring 39b.

[0211] 28A is a circuit diagram showing an example of the configuration of the pixel 34. The pixel 34 shown in FIG. Light emitting element 572, transistor 582, transistor 584, and transistor 586 28A, a transistor 588, and a capacitor 590. The pixel 34 includes wirings 31_1 and 31_2 as wirings 31 having the function of scanning lines. , and the wiring 31_3 are electrically connected.

[0212] One of the source and the drain of the transistor 582 is electrically connected to the wiring 32. The other of the source and drain of the transistor 582 is electrically connected to the gate of the transistor 584. The gate of transistor 584 is connected to the source or drain of transistor 588. One of the source and drain of the transistor 588 is electrically connected to one of the capacitors. The source or drain of the transistor 584 is electrically connected to one electrode of the capacitor 590. One of the inputs is electrically connected to the wiring 39a. The other terminal is electrically connected to one electrode of the light-emitting element 572. One electrode is electrically connected to one of the source and drain of the transistor 586. One of the source and drain of the transistor 586 is electrically connected to the other electrode of the capacitor element 590. The other of the source and drain of the transistor 586 and the The other of the source and drain of the light-emitting element 572 is electrically connected to a wiring 592. The other electrode is electrically connected to the wiring 39b.

[0213] Here, the other of the source or drain of the transistor 582 and the gate of the transistor 584 , one of the source and drain of the transistor 588 and one electrode of the capacitor 590 The electrically connected node is referred to as node N11. The other of the source or drain of the transistor 584, one electrode of the transistor 586, and The node to which the other electrode of the capacitor 590 is electrically connected is referred to as a node N12.

[0214] The wiring 592 functions as a power supply line. The potential of the wiring 592 is set to a potential V0.

[0215] [Example 1 of operation method of pixel 34] Next, an example of an operation method of the pixel 34 having the configuration shown in FIG. 8A is a timing chart showing an example of an operation method of the pixel 34 having the configuration shown in FIG. For ease of explanation, various resistances such as wiring resistance, parasitic capacitances of transistors and wiring, etc. , and the influence of the threshold voltage of the transistor, etc. is not taken into consideration.

[0216] In the operation shown in FIG. 28B, one frame period is divided into periods T11, T12, and T13. In the following, the configuration shown in FIG. 28A will be described for each of the periods T11 to T13. An example of the operation method of the pixel 34 will now be described.

[0217] In the period T11, a potential that turns off the transistor 582 is supplied to the wiring 31_1. In addition, a potential that turns on the transistor 586 is supplied to the wiring 31_2. A potential that turns on the transistor 588 is supplied to the wiring 31_3. The potential of the node N11 and the potential of the node N12 are the potential V0 of the wiring 592. do.

[0218] During a period T11, the voltage at the node N11 electrically connected to the gate of the transistor 584 is The potential is connected to the other of the source and drain of the transistor 584. The potential of the source N12 and the source N13 are both set to the potential V0. If the other of the drain and the gate of the transistor 584 is used as the source of the transistor 584, The difference between the potential at the port and the potential at the source of transistor 584 can be set to 0V. Therefore, especially when the threshold voltage of transistor 584 is greater than 0V, transistor 5 Since the current flow between the drain and source of the light-emitting element 5 can be suppressed, As a result, the current flowing through the display device 72 can be suppressed during the period T11. It can be said that this is a period in which no image is displayed on 10.

[0219] In the period T12, a potential that turns on the transistor 582 is supplied to the wiring 31_1. In addition, a potential that turns on the transistor 586 is supplied to the wiring 31_2. A potential that turns off the transistor 588 is supplied to the wiring 31_3. 2, the potential V corresponding to the image data data As a result, the node N11 supplies Place V data This causes the image data to be written to the pixel 34.

[0220] In the period T13, a potential that turns off the transistor 582 is supplied to the wiring 31_1. In addition, a potential that turns off the transistor 586 is supplied to the wiring 31_2. A potential that turns off the transistor 588 is supplied to the wiring 31_3. 86 is turned off, the current flowing between the drain and source of the transistor 584 current flows to the light emitting element 572. As a result, the potential V written to the node N11 dat a The light emitting element 572 emits light at a luminance corresponding to the pixel 34. It can be shown.

[0221] As described above, in the method shown in FIG. 28B, after providing a period in which no image is displayed on the display device 10, This makes it possible to display an image with strong contours, particularly when displaying a moving image on the display device 10. In other words, the display device 10 can display a sharp image. It can be done.

[0222] FIG. 29A shows an example of the configuration of the pixel 34, which has a memory, unlike the configuration shown in FIGS. 27A to 27C. The pixel 34 having the configuration shown in FIG. 29A is different from the pixel 34 having the configuration shown in FIG. The pixel 34 includes a transistor 513, a capacitor 515, and a circuit 401. The wiring 31 has a function as a wiring 31 in which the wiring 31_1 and the wiring 31_2 are electrically connected. The wiring 32 having the function of a data line is made up of wirings 32_1 and 32_2. is connected to.

[0223] One of the source and the drain of the transistor 511 is electrically connected to the wiring 32_1. The other of the source and the drain of the transistor 511 is connected to one electrode of the capacitor 515. The gate of the transistor 511 is electrically connected to the wiring 31_1. One of the source and the drain of the transistor 513 is electrically connected to the wiring 32_2. The other of the source and the drain of the transistor 513 is connected to the other electrode of the capacitor 515. and the circuit 401. The gate of the transistor 513 is electrically connected to the wiring 31_2. are electrically connected.

[0224] The circuit 401 is a circuit including at least one display element. Representative examples include light-emitting elements such as organic light-emitting elements and LED elements, and liquid crystal elements. , or MEMS (Micro Electro Mechanical Systems ) elements, etc. can be applied.

[0225] In this specification, the voltage supplied to a display element such as a light emitting element or a liquid crystal element is a potential applied to one electrode of the display element and a potential applied to the other electrode of the display element; Shows the difference.

[0226] The node to which the transistor 511 and the capacitor 515 are electrically connected is designated as N1. A node to which the transistor 513, the capacitor 515, and the circuit 401 are electrically connected is designated as N2. do.

[0227] The pixel 34 maintains the potential of the node N1 by turning off the transistor 511. In addition, by turning off the transistor 513, the potential of the node N2 can be Furthermore, the transistor 513 is turned off, and the transistor 5 By writing a predetermined potential to the node N1 via the capacitor 515, In this case, the potential of the node N2 can be changed in accordance with the change in the potential of the node N1. .

[0228] Here, OS transistors are used as the transistors 511 and 513. As described above, the OS transistor has a very low leakage current in the non-conducting state. Therefore, the transistor 511 and the transistor 513 have a small off-state current. By using an S transistor, the potentials of the nodes N1 and N2 can be maintained for a long period of time. It can be held in place.

[0229] Note that the transistors 511 and 513 each have a channel formation region formed of silicon. A silicon transistor (hereinafter also referred to as a silicon transistor) may be used. Examples of the silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. Low Temperature Poly-Silicon (LTPS) is used for the conductor layer. A transistor having a low-temperature silicon (LTPS transistor) is used. LTPS transistors have high field-effect mobility and are capable of high-speed operation. Therefore, the transistors 511 and 513 are LTPS transistors. This allows the pixel 34 to operate at high speed.

[0230] [Example 2 of operation method of pixel 34] Next, an example of an operation method of the pixel 34 configured as shown in FIG. 29A will be described with reference to FIG. 29B. Fig. 29B is a timing chart relating to the operation of the pixel 34 configured as shown in Fig. 29A. For ease of explanation, various resistors such as wiring resistors, transistors, wiring, etc. The effects of parasitic capacitance, threshold voltage of transistors, etc. are not taken into consideration.

[0231] In the operation shown in Figure 29B, one frame period is divided into periods T1 and T2. A period T1 is a period during which a potential is written to the node N2, and a period T2 is a period during which a potential is written to the node N1. be.

[0232] In the period T1, a voltage for turning on the transistor is applied to both the wiring 31_1 and the wiring 31_2. The wiring 32_1 is supplied with a fixed potential V ref supply and wiring 32 _2 has a potential V w supply.

[0233] The node N1 is supplied with a potential V ref is supplied The node N2 is supplied with a potential V w Ga-ba Therefore, the potential difference V w -V ref The state is maintained. do.

[0234] Subsequently, in a period T2, a potential that turns on the transistor 511 is supplied to the wiring 31_1. A potential that turns off the transistor 513 is supplied to the wiring 31_2. 32_1 has a potential V data is supplied to the wiring 32_1, and a predetermined constant potential is supplied to the wiring 32_2. The potential of the wiring 32_2 may be floating.

[0235] The node N1 is connected to the potential V data is supplied. At this time, The potential V data The potential of the node N2 changes to the potential That is, the potential V w The potential obtained by adding the potential dV is input. Although dV is shown as a positive value in FIG. 29B, it can also be a negative value. That is, the potential V data is the potential V ref It may be lower.

[0236] Here, the potential dV is roughly determined by the capacitance value of the capacitor 515 and the capacitance value of the circuit 401. When the capacitance of the capacitor 515 is sufficiently larger than the capacitance of the circuit 401, the potential d V is the potential difference V data -V ref The potential is close to

[0237] In this way, the pixel 34 combines two types of data and supplies them to the circuit 401 including the display element. Therefore, the image displayed on the display unit 33 can be displayed inside the pixel 34. Here, one of the two types of data is the image data mentioned above. The other of the two types of data can be, for example, correction data. The potential V corresponding to the correction data during T1 w After the image data is supplied to node N2, The potential V data is supplied to the node N1, and is displayed on the display unit 33. The image to be displayed can be the image data corrected by the correction data. Not only the data but also the correction data etc. are transmitted by the data driver circuit 22 of the display device 10. It can be generated.

[0238] Furthermore, the pixel 34 generates a potential exceeding the maximum potential that can be supplied to the wiring 32_1 and the wiring 32_2. For example, when a light-emitting element is used, a high dynamic range ( In addition, when using liquid crystal elements, overdriving is possible. It is possible to perform drive, etc.

[0239] [Configuration example of circuit 401] 29C and 29D show examples of the configuration of the pixel 34, including a specific example of the configuration of the circuit 401. The circuit 401 provided in the pixel 34 having the configuration shown in FIG. 29C includes a liquid crystal element 570 and , and a capacitor 517.

[0240] One electrode of the liquid crystal element 570 is electrically connected to the node N2. One electrode of the capacitor 517 is electrically connected to a wiring 533. The other electrode of the capacitor 517 is electrically connected to the wiring 531. The wiring 531 and the wiring 533 are connected to, for example, all the pixels 34 provided in the display device 10. In this case, the wiring 531 and the wiring 533 can be connected to the same wiring. The applied potential is a common potential.

[0241] The capacitor 517 functions as a storage capacitor. Note that the capacitor 517 may be omitted. stomach.

[0242] The pixel 34 having the configuration shown in FIG. 29C generates a voltage higher than the potential that the data driver circuit 22 or the like can generate. The voltage can be supplied to one electrode of the liquid crystal element 570. A high voltage can be supplied to the liquid crystal element 570 without using a high-voltage resistant circuit 22, and the display The display device 10 can be made inexpensive. Alternatively, the increase in power consumption of the display device 10 can be suppressed. While suppressing the increase in the driving voltage, for example, high-speed display can be achieved by overdrive driving. In addition, it is possible to apply a liquid crystal material having a low resistance to the wiring 32_1 or the wiring 32_2. By supplying data, the image data is corrected according to the operating temperature and the deterioration state of the liquid crystal element 570. It is possible.

[0243] The circuit 401 provided in the pixel 34 having the configuration shown in FIG. 29D includes a light emitting element 572 and a transistor. The capacitor 517 includes a capacitor 521 and a capacitor element 517 .

[0244] One of the source and the drain of the transistor 521 is electrically connected to the wiring 537 . The other of the source and the drain of the transistor 521 is electrically connected to one electrode of the light-emitting element 572. The gate of the transistor 521 is electrically connected to the node N2. One electrode of the capacitor 517 is electrically connected to the node N2. The electrode of the light-emitting element 572 is electrically connected to the wiring 535. 9 and electrically connected to each other.

[0245] The wiring 535 is a common wiring for, for example, all the pixels 34 provided in the display device 10. In this case, the potential supplied to the wiring 535 is a common potential. A constant potential can be applied to the line 537 and the wiring 539. For example, the wiring 537 A high potential can be supplied to the wiring 538, and a low potential can be supplied to the wiring 539.

[0246] The transistor 521 has a function of controlling current supplied to the light-emitting element 572. The capacitor 517 functions as a storage capacitor. The capacitor 517 may be omitted.

[0247] In FIG. 29D, the anode side of the light emitting element 572 is electrically connected to the transistor 521. However, the transistor 521 may be electrically connected to the cathode side. In this case, the potential values of the wiring 537 and the wiring 539 can be changed as appropriate. .

[0248] The pixel 34 having the configuration shown in FIG. 29D generates a voltage higher than the potential that the data driver circuit 22 and the like can generate. The voltage can be supplied to one electrode of the light emitting element 572. A high potential can be supplied to the gate of transistor 521 without using a high-voltage resistant circuit 22. This allows the display device 10 to be manufactured at a low cost. By supplying a high potential to the light emitting element 572, a large current can be passed through the light emitting element 572. The pixel 34 having the configuration shown in FIG. 29D can realize, for example, HDR display. By supplying correction data to the wiring 32_1 or the wiring 32_2, the transistor 521 and the It is also possible to correct variations in the electrical characteristics of the optical element 572.

[0249] In addition, a high potential is supplied to the gate of the transistor 521, so that a high potential is applied to the light-emitting element 572. Specifically, for example, the potential of the wiring 537 can be increased. Therefore, when the light emitting element 572 is an organic EL element, the light emitting element is arranged in a tandem arrangement as described later. This structure can improve the current efficiency and external quantum efficiency of the light emitting element 572. Therefore, a high brightness image can be displayed on the display device 10. This allows the power consumption of the display device 10 to be reduced.

[0250] The circuit is not limited to the circuits illustrated in FIGS. 29C and 29D, and may include additional transistors, capacitance elements, etc. For example, a transistor may be added to the configuration shown in FIGS. 29C and 29D. By adding one resistor and one capacitor, the number of nodes that can hold potential is increased to three. In other words, the nodes that can hold the potential can be the nodes N1 and N2. In addition to node N2, another node can be provided in pixel 34. The potential of node N2 can be increased further. In this configuration, a higher voltage can be supplied to the liquid crystal element 570. 29D, a larger current can be passed through the light emitting element 572. can.

[0251] 30A to 30E show the circuit 401 when the light emitting element 572 is used as the display element. 30A is a diagram showing an example of the configuration of the circuit 401 shown in FIG. Similar to the circuit 401, the circuit 401 includes a capacitor 517, a transistor 521, and a light-emitting element 572. do.

[0252] In the circuit 401 having the configuration shown in FIG. 30A, the gate of the transistor 521 is connected to the node N2. The source electrode of the transistor 521 is electrically connected to one electrode of the capacitor 517. One of the source and drain of the transistor 521 is electrically connected to a wiring 537. The other of the source and drain is electrically connected to the other electrode of the capacitor 517. The other electrode of the light-emitting element 517 is electrically connected to one electrode of the light-emitting element 572. The other electrode of the element 72 is electrically connected to a wiring 539 .

[0253] The circuit 401 having the configuration shown in FIG. 30B also has a capacitance element similar to the circuit 401 having the configuration shown in FIG. 29D. The pixel includes a pixel 517, a transistor 521, and a light-emitting element 572.

[0254] In the circuit 401 having the configuration shown in FIG. 30B, the gate of the transistor 521 is connected to the node N2. One electrode of the light-emitting element 572 is electrically connected to the gate electrode of the capacitor 517. The other electrode of the light-emitting element 572 is electrically connected to the wiring 537. The source of the transistor 521 is electrically connected to one of the source and drain of the transistor 521. The other electrode of the drain is electrically connected to the other electrode of the capacitor 517. The other electrode of 17 is electrically connected to a wiring 539 .

[0255] FIG. 30C shows a circuit in which a transistor 525 is added to the circuit 401 shown in FIG. 30A. 401. One of the source and drain of the transistor 525 is connected to the transistor The other of the source and drain of the transistor 521 and the other electrode of the capacitor 517 are electrically connected to each other. The other of the source and the drain of the transistor 525 is connected to one of the light emitting elements 572. The gate of the transistor 525 is electrically connected to the wiring 541. The wiring 541 functions as a scan line that controls the conduction of the transistor 525. Has.

[0256] In the pixel 34 having the circuit 401 configured as shown in FIG. 30C, the potential of the node N2 is Even if the voltage exceeds the threshold voltage of the transistor 521, if the transistor 525 is not turned on, the No current flows through the optical element 572. This makes it possible to prevent malfunction of the display device 10. do.

[0257] FIG. 30D shows a circuit in which a transistor 527 is added to the circuit 401 shown in FIG. 30C. 401. One of the source and drain of the transistor 527 is connected to the transistor The other of the source or drain of the transistor 521, the other of the source or drain of the transistor 525 The transistor 527 is electrically connected to one electrode of the transistor 527 and the other electrode of the capacitor 517. The other of the source and the drain is electrically connected to a wiring 543. The gate is electrically connected to a wiring 545. The wiring 545 is a gate of the transistor 527. It functions as a scanning line that controls the

[0258] The wiring 543 can be electrically connected to a supply source of a specific potential such as a reference potential. The wiring 543 functions as a power supply line. By applying a specific potential to the other of the source or drain, image data is written to the pixel 34. This can stabilize the writing.

[0259] The wiring 543 can be electrically connected to the circuit 520. a constant potential source, a function for acquiring the electrical characteristics of the transistor 521, and a function for generating correction data. The function may be one or more of the following:

[0260] The circuit 401 having the configuration shown in FIG. 30E includes a capacitor 517, a transistor 521, and a transistor The display panel 520 includes a resistor 529 and a light-emitting element 572 .

[0261] In the circuit 401 having the configuration shown in FIG. 30E, the gate of the transistor 521 is connected to the node N2. The source electrode of the transistor 521 is electrically connected to one electrode of the capacitor 517. One of the source and drain of the transistor 529 is electrically connected to a wiring 537. One of the source and drain is electrically connected to a wiring 543.

[0262] The other electrode of the capacitor 517 is electrically connected to the other of the source and drain of the transistor 521. The other of the source and drain of the transistor 521 is connected to the The source or drain of the transistor 529 is electrically connected to the other of the source or drain of the transistor 529. The other of the drains is electrically connected to one electrode of the light-emitting element 572 .

[0263] The gate of the transistor 529 is electrically connected to the wiring 31_1. The other electrode is electrically connected to a wiring 539 .

[0264] <Configuration example 3 of the display device> FIG. 31 shows a display when the pixel 34 has the configuration shown in FIG. 29A, FIG. 29C, or FIG. 29D. 31 is a block diagram showing an example of the configuration of the display device 10. The display device 10 shown in FIG. In addition to the components of the display device 10 shown in FIG. The multiplexer circuit 24 can be provided, for example, on layer 20, as shown in FIG. The number of demultiplexer circuits 24 is, for example, the number of columns of pixels 34 provided in the display unit 33. can be the same number.

[0265] The gate driver circuit 21 is electrically connected to the pixel 34 via a wiring 31_1. The light driver circuit 21 is electrically connected to the pixel 34 via the wiring 31_2. The wiring 31_1 and the wiring 31_2 function as scanning lines.

[0266] The data driver circuit 22 is electrically connected to the input terminal of the demultiplexer circuit 24. The first output terminal of the demultiplexer circuit 24 is electrically connected to the pixel 34 via the wiring 32_1. The second output terminal of the demultiplexer circuit 24 is connected to the The wiring 32_1 and the wiring 32_2 are electrically connected to the pixel 34. The wiring 32_1 and the wiring 32_2 function as data lines. Possess the ability.

[0267] The data driver circuit 22 and the demultiplexer circuit 24 are collectively referred to as a data driver. In other words, the demultiplexer circuit 24 is a data driver circuit 2. It may be included in 2.

[0268] In the display device 10 having the configuration shown in FIG. 31, the data driver circuit 22 receives image data S1 The demultiplexer circuit 24 has a function of generating the image data S1 and the image data S2. 1 to supply image data S1 to the pixel 34, and the image data S2 is supplied to the pixel 34 through the wiring 32_2. The display device 1 having the configuration shown in FIG. If we operate the MOSFET in the manner shown in FIG. 29B, the potential V data corresponds to image data S1 The potential V w can be set as a potential corresponding to the image data S2. do.

[0269] As shown in FIG. 29B, node N2 is connected to a potential V w After supplying the potential V dat a By supplying w +dV”. Here, as mentioned above, As shown, the potential dV is the potential V data Therefore, the image data S2 contains the image In other words, the image data S1 can be superimposed on the image data S2. It can be combined.

[0270] Potential V corresponding to image data S1 data , and the potential V corresponding to the image data S2 w Large The size is limited depending on the withstand voltage of the data driver circuit 22. By superimposing the image data S2 on the image data S1, the potential that the data driver circuit 22 can output is An image corresponding to image data with a higher potential can be displayed on the display unit 33. This allows a large current to flow through the light emitting element 572, and a high brightness image is displayed on the display unit 33. The display unit 33 can display an image with a brightness range of 1000 s.i.m. , the dynamic range can be expanded.

[0271] The image corresponding to the image data S1 and the image corresponding to the image data S2 may be the same. The image corresponding to the image data S1 and the image corresponding to the image data S2 may be different. When the image and the image are the same, the display unit 33 displays the brightness of the image corresponding to the image data S1, and It is possible to display an image with a higher brightness than the image corresponding to the image data S2.

[0272] In FIG. 32, an image P1 corresponding to image data S1 is an image containing only text. In this case, the image P2 corresponding to S2 is an image containing pictures and text. By superimposing the image P1 and the image P2, the brightness of the characters can be increased. 29B, the node N2 is supplied with a potential V w Written by After the voltage at node N2 is data Since it changes depending on the image data The potential V corresponding to the S2 w When rewriting, the potential V of the image data S1 data Again On the other hand, the potential V data If you want to rewrite it, use the The charge written to the node N2 at time T1 leaks from the transistor 513 and the like. As long as it is held steady, the potential V w Therefore, in the case shown in Figure 32, At this point, the potential V data You can adjust the brightness of the text by adjusting the value of do.

[0273] Here, as described above, the potential V corresponding to the image data S2 w If you want to rewrite the image data, The potential V corresponding to the data S1 data On the other hand, the potential V da ta When rewriting, the potential V w Therefore, image P2 does not need to be rewritten. It is preferable to use an image that is less frequently rewritten than P1. Note that image P1 contains only text. Image P2 is not limited to an image containing pictures and text.

[0274] <Example of cross-sectional configuration of display device> 33 is a cross-sectional view showing a configuration example of the display device 10. The display device 10 includes a substrate 701 and The substrate 705 is attached to the substrate 701 with a sealing material 712. .

[0275] A single crystal semiconductor substrate such as a single crystal silicon substrate can be used as the substrate 701. The substrate 701 may be a semiconductor substrate other than a single crystal semiconductor substrate.

[0276] The transistor 441 and the transistor 601 are provided on a substrate 701. The transistor 441 may be a transistor provided in the functional circuit 40. 601 denotes a transistor provided in the gate driver circuit 21 or a data driver circuit That is, the transistor 441 and the transistor 22 can be used as the transistors. The transistor 601 can be provided in the layer 20 shown in FIG. 1A and the like.

[0277] The transistor 441 includes a conductor 443 that functions as a gate electrode and a gate insulator and a part of the substrate 701, and the channel forming region a semiconductor region 447 including a low-pressure region having a function as one of a source region and a drain region; A low resistance region 449a having a function as the other of the source region or the drain region The transistor 441 has a region 449b. The transistor 441 can be either a p-channel or n-channel transistor. That's fine too.

[0278] The transistor 441 is electrically isolated from other transistors by an element isolation layer 403. In FIG. 33, the transistor 441 and the transistor 601 are separated by the element isolation layer 403. The device isolation layer 403 is formed by LOCOS (LOCal Oxidation of Silicon (STI) method or Shallow Tre The insulating film can be formed by using a method such as nch isolation.

[0279] Here, the semiconductor region 447 of the transistor 441 shown in FIG. The conductor 443 covers the side and top surfaces of the semiconductor region 447 with the insulator 445 interposed therebetween. In FIG. 33, the conductor 443 covers the side surface of the semiconductor region 447. The conductor 443 may be made of a material that adjusts the work function. do.

[0280] A transistor having a convex semiconductor region such as the transistor 441 is formed by Since it uses a protruding portion, it can be called a fin transistor. Even if there is an insulator in contact with the upper part and functioning as a mask for forming the convex part, In addition, although FIG. 33 shows a configuration in which a protrusion is formed by processing a part of the substrate 701, Alternatively, a semiconductor having a convex shape may be formed by processing an SOI substrate.

[0281] Note that the configuration of the transistor 441 shown in FIG. 33 is an example, and the present invention is not limited to this configuration. An appropriate configuration may be selected depending on the circuit configuration or the operation method of the circuit. For example, transistor 4 41 may be a planar transistor.

[0282] The transistor 601 can have a structure similar to that of the transistor 441 .

[0283] On the substrate 701, an element isolation layer 403, a transistor 441, and a transistor 60 are provided. In addition to the insulator 1, an insulator 405, an insulator 407, an insulator 409, and an insulator 411 are provided. Conductors 451 in the insulators 405, 407, 409, and 411 Here, the height of the top surface of the conductor 451 and the height of the top surface of the insulator 411 are It can be done to the same extent.

[0284] An insulator 413 and an insulator 415 are provided on the conductor 451 and the insulator 411. In addition, a conductor 457 is embedded in the insulator 413 and the insulator 415. 7 can be provided in the same layer as the wirings 121 to 123 shown in FIG. Here, the height of the upper surface of the conductor 457 and the height of the upper surface of the insulator 415 can be made approximately the same.

[0285] An insulator 417 and an insulator 419 are provided on the conductor 457 and the insulator 415. In addition, a conductor 459 is embedded in the insulator 417 and the insulator 419. 9 can be provided in the same layer as the wirings 141 to 143 shown in FIG. 25, for example. Here, the height of the upper surface of the conductor 459 and the height of the upper surface of the insulator 419 can be made approximately the same.

[0286] An insulator 421 and an insulator 214 are provided on the conductor 459 and the insulator 419. The conductor 453 is embedded in the insulator 421 and the insulator 214. The height of the upper surface of 53 and the height of the upper surface of insulator 214 can be made to be approximately the same.

[0287] An insulator 216 is provided on the conductor 453 and on the insulator 214. The conductor 455 is buried in the insulating layer 216. The height of the surfaces can be made the same.

[0288] On the conductor 455 and on the insulator 216, an insulator 222, an insulator 224, an insulator 254, an insulator An edge 244, an insulator 280, an insulator 274, and an insulator 281 are provided. 2, Insulator 224, Insulator 254, Insulator 244, Insulator 280, Insulator 27 A conductor 305 is embedded in the insulating material 281 and the insulating material 282. The height of the surface and the height of the upper surface of the insulator 281 can be made approximately the same.

[0289] An insulator 361 is provided on the conductor 305 and on the insulator 281. The conductor 317 and the conductor 337 are buried. The height of the upper surface of the insulator 361 can be made to be approximately the same.

[0290] An insulator 363 is provided on the conductor 337 and on the insulator 361. The conductor 347, the conductor 353, the conductor 355, and the conductor 357 are embedded. , the height of the upper surfaces of the conductors 353, 355, and 357, and the upper surface of the insulator 363 The height can be made to be the same.

[0291] A connection electrode 76 is formed on the conductor 353, the conductor 355, the conductor 357, and the insulator 363. 0 is provided. An anisotropic conductor 780 is provided so as to be electrically connected to the connection electrode 760. and an FPC (Flexible Printed Circuit) is provided to be electrically connected to the anisotropic conductor 780. The FPC 716 is provided with a display. Various signals and the like are supplied to the display device 10 from outside the device 10.

[0292] As shown in FIG. 33, the other of the source region and drain region of the transistor 441 The functional low resistance region 449b includes the conductors 451, 457, 459, and Conductor 453, conductor 455, conductor 305, conductor 317, conductor 337, conductor 347, The conductor 353, the conductor 355, the conductor 357, the connection electrode 760, and the anisotropic conductor 780 33, the connection electrode 760 and the conductive Conductors 353 and 355 are conductors having a function of electrically connecting the conductor 347. , and the conductor 357 are shown, but one embodiment of the present invention is not limited to these. The conductor having the function of electrically connecting the conductor 60 and the conductor 347 may be one or two. The connection electrode 760 and the conductor 347 may be electrically connected. By providing a plurality of conductors having the function of contacting each other, the contact resistance can be reduced.

[0293] A transistor 750 is provided on the insulator 214. The transistor 750 is 4. That is, the transistor 750 can be the transistor provided in FIG. The transistor 750 may be an OS transistor. As described above, OS transistors have an extremely low off-state current. Therefore, the retention time of image data etc. can be extended, Therefore, the power consumption of the display device 10 can be reduced. do.

[0294] Note that a Si transistor may be used as the transistor 750. In particular, an LTPS transistor As mentioned above, LTPS transistors are preferably used. The mobility is high and high speed operation is possible. Therefore, the transistor 750 is an LTPS transistor. By applying the motor, the display device 10 can be operated at high speed.

[0295] Insulators 254, 244, 280, 274, and 281 Conductor 301a and conductor 301b are embedded in the The conductor 301b is electrically connected to either the source or the drain of the transistor 750. The conductor 30 is electrically connected to the other of the source and drain of the transistor 750. The height of the upper surface of the conductor 301b and the height of the upper surface of the insulator 281 can be made approximately the same. .

[0296] A conductor 311, a conductor 313, a conductor 331, a capacitor element 790, and a conductor The conductors 311 and 313 are buried in the transistor. The conductor 333 and the conductor 334 are electrically connected to the conductor 750 and function as wiring. 35 is electrically connected to the capacitor element 790. Here, the conductor 331, the conductor 333, The height of the upper surface of the conductor 335 and the height of the upper surface of the insulator 361 can be made approximately the same.

[0297] The conductor 341, the conductor 343, and the conductor 351 are embedded in the insulator 363. Therefore, the height of the upper surface of the conductor 351 and the height of the upper surface of the insulator 363 can be made approximately the same.

[0298] Insulator 405, insulator 407, insulator 409, insulator 411, insulator 413, insulator 41 5, insulator 417, insulator 419, insulator 421, insulator 214, insulator 280, insulator 274, the insulator 281, the insulator 361, and the insulator 363 function as interlayer films. , and may function as a planarizing film that covers the underlying uneven shapes. The top surface of the insulator 363 is polished by chemical mechanical polishing (CMP) to improve flatness. The surface is flattened by a flattening process using a method such as Mechanical Polishing. It may also be used.

[0299] As shown in FIG. 33, the capacitance element 790 has a lower electrode 321 and an upper electrode 325. In addition, an insulator 323 is provided between the lower electrode 321 and the upper electrode 325. That is, the capacitor element 790 has an insulator 323 sandwiched between a pair of electrodes, which functions as a dielectric. 33 shows an example in which a capacitor 790 is provided on an insulator 281. As shown, the capacitor 790 may be provided on an insulator different from the insulator 281 .

[0300] In FIG. 33, the conductor 301a, the conductor 301b, and the conductor 305 are formed in the same layer. In addition, the conductor 311, the conductor 313, the conductor 317, and the lower electrode 3 shows an example in which the conductor 331, the conductor 333, and the electrode 321 are formed in the same layer. In this example, the conductor 335 and the conductor 337 are formed in the same layer. 3 shows an example in which the conductive layer 341, the conductive layer 343, and the conductive layer 347 are formed in the same layer. The conductor 351, the conductor 353, the conductor 355, and the conductor 357 are formed in the same layer. In this way, by forming multiple conductors on the same layer, The manufacturing process of the device 10 can be simplified, making the display device 10 inexpensive. These may be formed in different layers and may be made of different types of materials. may have

[0301] The display device 10 shown in FIG. 33 includes a liquid crystal element 570. The liquid crystal element 570 includes a conductor 77 2, a conductor 774, and a liquid crystal layer 776 therebetween. 5 side and functions as a common electrode. , the transistor via the conductor 341, the conductor 331, the conductor 313, and the conductor 301b. The conductor 772 is electrically connected to the other of the source and drain of the insulator 750. It is formed on the pixel electrode 63 and functions as a pixel electrode.

[0302] The conductor 772 can be made of a material that is transparent to visible light or a material that is reflective to visible light. The transparent material may be an oxide material containing indium, zinc, tin, or the like. As the reflective material, it is preferable to use a material containing aluminum, silver, etc. stomach.

[0303] If a reflective material is used for the conductor 772, the display device 10 becomes a reflective liquid crystal display device. On the other hand, a light-transmitting material is used for the conductor 772, and a light-transmitting material is also used for the substrate 701, etc. When the display device 10 is a reflective liquid crystal display device, the display device 10 becomes a transmissive liquid crystal display device. On the other hand, if the display device 10 is a transmissive liquid crystal display device, a polarizing plate is provided on the viewing side. In this case, a pair of polarizing plates is provided to sandwich the liquid crystal element.

[0304] Although not shown in FIG. 33, an alignment film may be provided in contact with the liquid crystal layer 776. In addition, optical components (optical substrates) such as polarizing components, phase difference components, and anti-reflection components, and backlight components, Light sources such as a light source, a side light, etc. may be provided as appropriate.

[0305] A structure 778 is provided between the insulator 363 and the conductor 774. The structure 778 is a pillar. It is a spacer with a shape that controls the distance (cell gap) between the substrate 701 and the substrate 705. Note that a spherical spacer may be used as the structure 778.

[0306] On the substrate 705 side, there are a light-shielding layer 738, a colored layer 736, and an insulator 734 in contact with these. The light-shielding layer 738 has a function of blocking light emitted from the adjacent region. The light-shielding layer 738 has a function of blocking external light from reaching the transistor 750 and the like. The colored layer 736 is provided to have a region overlapping with the liquid crystal element 570 .

[0307] The liquid crystal layer 776 may include a thermotropic liquid crystal, a low molecular weight liquid crystal, a high molecular weight liquid crystal, or a polymer dispersed liquid crystal. (PDLC: Polymer Dispersed Liquid Crystal), Polymer Network Liquid Crystal (PNLC) Crystal), ferroelectric liquid crystal, antiferroelectric liquid crystal, etc. can be used. When the electric field method is adopted, a liquid crystal that exhibits a blue phase without using an alignment film may be used.

[0308] The liquid crystal element modes are TN (Twisted Nematic) mode, V A (Vertical Alignment) mode, IPS (In-Plane-Sw Fringe Field Switching (FFS) mode ASM (Axially Symmetric aligned Micro-c ell) mode, OCB(Optically Compensated Birefr) Ingence) mode, ECB (Electrically Controlled Birefringence mode, guest-host mode, etc. can be used.

[0309] In addition, the liquid crystal layer 776 is made of a polymer dispersed liquid crystal or a polymer network liquid crystal. In this case, a structure for displaying black and white without providing a colored layer 736 can be used. Alternatively, a colored layer 736 may be used to perform color display.

[0310] In addition, as a driving method of the liquid crystal element, a time-dependent additive color mixture method is used to display colors. A split display method (also called a field sequential driving method) may be applied. In this case, the colored layer 736 may not be provided. For example, it is necessary to provide sub-pixels that exhibit the respective colors of R (red), G (green), and B (blue). Therefore, it has the advantage of improving the pixel aperture ratio and increasing the definition. .

[0311] The display device 10 having the configuration shown in FIG. 33 uses a liquid crystal element as a display element. An embodiment is not limited to this. The display device differs from the display device 10 shown in FIG. 33 in that light-emitting elements are used as elements.

[0312] The display device 10 shown in FIG. 34 has a light-emitting element 572. The light-emitting element 572 is 2, an EL layer 786, and a conductor 788. The conductor 788 is provided on the substrate 705 side. The conductor 772 functions as a common electrode. 1, the conductor 331, the conductor 313, and the conductor 301b of the transistor 750. The conductor 772 is electrically connected to the other of the source and drain. The EL layer 786 is made of an organic compound or a quantum dot. It contains inorganic compounds such as cellulose.

[0313] Materials that can be used for the organic compound include fluorescent materials and phosphorescent materials. In addition, materials that can be used for quantum dots include colloidal quantum dot materials, Examples include alloy-type quantum dot materials, core-shell-type quantum dot materials, and core-type quantum dot materials. can be done.

[0314] In the display device 10 shown in FIG. 34, an insulator 730 is provided on an insulator 363. The insulator 730 can cover part of the conductor 772. The light-transmitting conductor 788 is included in the light-transmitting element 72, and the light-emitting element 72 can be a top-emission type light-emitting element. The light emitting element 572 has a bottom emission structure that emits light to the conductor 772 side. Alternatively, a dual emission structure may be used in which light is emitted to both the conductor 772 and the conductor 788. That's fine.

[0315] The light emitting element 572 can have a microcavity structure, as will be described in more detail below. This makes it possible to extract light of a specific color (for example, RGB) without providing a colored layer. In this case, the display device 10 can display in color. This makes it possible to suppress the absorption of light by the colored layer. This allows a high-resolution image to be displayed, and also reduces the power consumption of the display device 10. The EL layer 786 is formed in an island shape for each pixel or in a stripe shape for each pixel row, that is, in a separate color. Even when a colored layer is formed, it is possible to adopt a configuration in which no colored layer is provided.

[0316] The light-shielding layer 738 is provided so as to have a region overlapping with the insulator 730. The light-shielding layer 738 is covered with the insulator 734. The gap is filled with a sealing layer 732 .

[0317] Furthermore, a structure 778 is provided between the insulator 730 and the EL layer 786. A structure 778 is provided between the body 730 and the insulator 734. The structure 778 is a columnar structure. It has a function of controlling the distance (cell gap) between the substrate 701 and the substrate 705. Note that a spherical spacer may be used as the structure 778.

[0318] On the substrate 705 side, a light-shielding layer 738 and an insulator 734 in contact therewith are provided. The layer 738 has a function of blocking light emitted from the adjacent region. , has the function of blocking external light from reaching the transistor 750 and the like.

[0319] FIG. 35 is a modified example of the display device 10 shown in FIG. 34, and is different from the modified example in that a colored layer 736 is provided. 34. By providing the colored layer 736, the light emitting element 572 This allows the color purity of the light extracted from the display device 10 to be improved. In addition, for example, all the light emitting elements 572 of the display device 10 can be set to white. Since the EL layer 786 can be formed as a light-emitting element that emits colored light, the EL layer 786 does not need to be formed by coloring. This allows the display device 10 to have high definition.

[0320] 33 to 35, the transistor 441, the transistor 601, and the transistor 7 36 shows a different configuration from that of FIG. 33, but one embodiment of the present invention is not limited to this. 37 is a modification of FIG. 34, and FIG. 38 is a modification of FIG. 35. The transistor 602 and the transistor 603 are transistors having the same configuration as the transistor 601. The display device shown in FIGS. 33 to 35 has a transistor 750. This is different from position 10.

[0321] An insulator 613 and an insulator 614 are provided on the substrate 701, and a transistor is provided on the insulator 614. A resistor 602 and a transistor 603 are provided. For example, a transistor or the like may be provided between the substrate 701 and the insulator 61. 3 and the transistor 441 and the transistor 601 shown in FIGS. 33 to 35 A transistor having a similar configuration may be provided.

[0322] The transistor 602 can be a transistor provided in the functional circuit 40. The transistor 603 is a transistor provided in the gate driver circuit 21 or a data driver. In other words, the transistor 60 can be a transistor provided in the driver circuit 22. 2 and transistor 603 can be provided in layer 20 shown in FIG. 1A and the like.

[0323] The transistor 602 and the transistor 603 are disposed on the insulator 614, as well as the insulator 616, Insulator 622, insulator 624, insulator 654, insulator 644, insulator 680, insulator 67 4, and insulator 681 are provided. The conductor 461 is embedded in the insulator 674 and the insulator 681. The height of the upper surface of the body 461 and the height of the upper surface of the insulator 681 can be made to be approximately the same.

[0324] An insulator 501 is provided on the conductor 461 and on the insulator 681. The conductor 463 is buried in the insulating layer 501. The height of the surfaces can be made the same.

[0325] An insulator 503 is provided on the conductor 463 and on the insulator 501. The conductor 465 is buried in the insulating layer 503. The height of the surfaces can be made the same.

[0326] An insulator 505 is provided over the conductor 465 and the insulator 503. The conductor 467 is embedded in the wiring 121 shown in FIG. The conductor 467 can be provided in the same layer as the wiring 123. The height of the top surface of the insulator 505 can be made to be approximately the same.

[0327] An insulator 507 is provided on the conductor 467 and on the insulator 505. The conductor 469 is buried in the insulating layer 507. The height of the surfaces can be made the same.

[0328] An insulator 509 is provided over the conductor 469 and the insulator 507. The conductor 471 is embedded in the wiring 141 shown in FIG. The conductor 471 can be provided in the same layer as the wiring 143. The height of the upper surface of the insulator 509 can be made to be approximately the same.

[0329] An insulator 421 and an insulator 214 are provided on the conductor 471 and the insulator 509. The conductor 453 is embedded in the insulator 421 and the insulator 214. The height of the upper surface of 53 and the height of the upper surface of insulator 214 can be made to be approximately the same.

[0330] As shown in FIGS. 36 to 38, either the source or the drain of the transistor 602 is conductive. Conductor 461, Conductor 463, Conductor 465, Conductor 467, Conductor 469, Conductor 471 , Conductor 453, Conductor 455, Conductor 305, Conductor 317, Conductor 337, Conductor 3 47, the conductor 353, the conductor 355, the conductor 357, the connection electrode 760, and the anisotropic conductor It is electrically connected to the FPC 716 via 780.

[0331] Insulator 613, insulator 614, insulator 680, insulator 674, insulator 681, insulator 50 1, the insulator 503, the insulator 505, the insulator 507, and the insulator 509 are interlayer films. and may also function as a planarizing film that covers the underlying uneven shapes. .

[0332] By configuring the display device 10 as shown in FIGS. 36 to 38, the frame of the display device 10 can be narrowed. , and miniaturization, and all the transistors included in the display device 10 are transistors of the same configuration. This allows, for example, a transistor provided on the layer 20 and a transistor provided on the layer 30 to be The display transistor and the display transistor can be manufactured using the same device. The manufacturing cost of the display device 10 can be reduced, and the display device 10 can be made inexpensive. can.

[0333] <Display device configuration example 4> 39A and 39B show a subpixel 90 that can be applied to a display device according to one embodiment of the present invention. 27C is a top view showing an example of the configuration of the sub-pixel 901. Here, the transistor 552 has a back gate in addition to a gate. The gate of the transistor 554 is electrically connected to the wiring 31. The back gate is connected to the other of the source and drain of the transistor 554. The other electrode of the capacitor 562 and one electrode of the light-emitting element 572 are electrically connected to each other.

[0334] In FIG. 39A, the conductors constituting the transistors, capacitors, wirings, etc. included in the subpixel 901 are 39B shows a light emitting element 572 in addition to the configuration shown in FIG. 39A and 39B, a conductor 772 that functions as one of the electrodes is shown. In any of the above-mentioned examples, the conductor or the like that functions as the other electrode of the light emitting element 572 is Here, one electrode of the light emitting element 572 functions as a pixel electrode, and The other electrode of the optical element 572 functions as a common electrode.

[0335] As shown in FIGS. 39A and 39B, the subpixel 901 includes a conductor 911, a conductor 912, and a , semiconductor 913, semiconductor 914, conductor 915a, conductor 915b, and conductor 91 6a, conductor 916b, conductor 917, conductor 918, conductor 919, and conductor 920, conductor 921, conductor 922, conductor 923, conductor 924, and conductor 925, conductor 926, conductor 927, conductor 928, conductor 929, and conductor 930, a conductor 931, and a conductor 772.

[0336] The conductor 911 and the conductor 912 can be formed in the same process. The conductor 911 and the semiconductor 914 are formed in the same process, and are formed in a process after the conductor 911 and the conductor 912. Conductors 915a and 915b, and conductors 916a and The conductor 916b is formed in the same process, and is formed in a process after the conductors 911 and 912. The conductor 917 and the conductor 918 are formed in the same process. 913 and semiconductor 914, as well as conductors 915a, 915b, 916a, and The conductor 916b can be formed in a subsequent step.

[0337] The conductors 919 to 923 are formed in the same process, and the conductors 917 and 918 The conductor 924 can be formed in a later step. The conductors 925 to 928 can be formed in the same process. The conductors 929 to 929 can be formed in a process subsequent to the process for forming the conductor 924. 31 is formed in the same process, and is formed in a process after the conductors 925 to 928. The conductor 772 can be formed in a process after the conductors 929 to 931. This can be done.

[0338] In this specification, elements formed in the same process are said to be provided in the same layer. For example, the conductor 911 and the conductor 912 can be formed in the same process. Therefore, it can be said that the conductor 911 and the conductor 912 are provided in the same layer. Elements formed in later processes are placed on top of elements formed in earlier processes. For example, the conductors 929 to 931 can be formed from the conductors 925 to 928. Since the conductors 929 to 931 can be formed in a later step, 5 to 928.

[0339] The conductor 911 functions as a back gate electrode of the transistor 552. The conductor 913 has a channel formation region of the transistor 552. The conductor 915 serves as one of the source and drain electrodes of the transistor 552. b serves as the other of the source electrode and the drain electrode of the transistor 552. The conductor 917 functions as a gate electrode of the transistor 552 .

[0340] The conductor 912 functions as a back gate electrode of the transistor 554. The conductor 914 has a channel formation region of the transistor 554. The conductor 916 serves as one of the source and drain electrodes of the transistor 554. b functions as the other of the source electrode and the drain electrode of the transistor 554. The conductor 918 functions as a gate electrode of the transistor 554 .

[0341] The conductor 919 functions as one electrode of the capacitor 562. The conductor 925 functions as the other electrode of the capacitor 562. The conductor 929 corresponds to the wiring 31 having the function of a data line. 2. The conductor 930 corresponds to the wiring 39a that functions as a power supply line. The electric body 772 functions as one electrode of the light-emitting element 572 as described above.

[0342] The conductor 911 is electrically connected to the conductor 920. The conductor 912 is electrically connected to the conductor 923. The conductor 915a is electrically connected to the conductor 921. 15b is electrically connected to the conductor 919. The conductor 916a is electrically connected to the conductor 922. are connected to the network.

[0343] The conductor 916b is electrically connected to the conductor 923. That is, The conductor 912 serving as a back gate electrode and the source electrode of the transistor 554 The conductor 916b, which functions as the other of the input and output electrodes, is connected to the conductor 923. and electrically connected.

[0344] The conductor 917 is electrically connected to the conductor 920. A conductor 911 having a function as a gate electrode of a transistor 552 and a gate electrode of a transistor 553 are connected to the gate electrode of the transistor 552. The conductor 917, which functions as a power supply, is electrically connected to the conductor 920 via the conductor 920.

[0345] The conductor 920 is electrically connected to the conductor 925. That is, the gate of the transistor 552 A conductor 917 having a function as a gate electrode and a conductor 92 having a function as a scanning line are 5 is electrically connected via a conductor 920.

[0346] The conductor 918 is electrically connected to the conductor 919. The conductor 921 is electrically connected to the conductor 926. The conductor 922 is electrically connected to the conductor 927. 3 is electrically connected to the conductor 928. The conductor 924 is electrically connected to the conductor 928. To be continued.

[0347] The conductor 926 is electrically connected to the conductor 929. A conductor 915a serving as one of a source electrode and a drain electrode, and a data line The conductor 929 having the above functions is electrically connected to the conductor 921 and the conductor 926. To be continued.

[0348] The conductor 927 is electrically connected to the conductor 930. That is, the A conductor 916a serving as one of a source electrode and a drain electrode and a power supply line The conductor 930 having the function of To be continued.

[0349] The conductor 928 is electrically connected to the conductor 931. The conductor 931 is electrically connected to the conductor 772. are electrically connected.

[0350] The semiconductor 913 and the semiconductor 914 can include, for example, a metal oxide. The transistor 552 and the transistor 554 can be OS transistors. Additionally, semiconductor 913 and semiconductor 914 may comprise, for example, low temperature polysilicon. Therefore, the transistor 552 and the transistor 554 are LTPS transistors. This can be done.

[0351] FIG. 40 shows an example of the configuration of a pixel 902 that is configured using sub-pixels 901 having the configuration shown in FIG. 39B. In FIG. 40, a sub-pixel 901R is a sub-pixel having a function of emitting red light. A sub-pixel 901G indicates a sub-pixel 901 having a function of emitting green light, The sub-pixel 901B is a sub-pixel 901 that has a function of emitting blue light. The pixel 902 is composed of the subpixels 901R, 901G, and 901B. Specifically, the sub-pixels 901R and 901B provided in the upper row and A pixel 902 is formed by the sub-pixel 901G provided in the lower row. , the sub-pixel 901G provided in the upper row, the sub-pixel 901R and the sub-pixel The pixel 901B and the pixel 901B constitute one pixel 902.

[0352] In FIG. 40, the subpixels 901R, 901G, and 901B are arranged in the upper row. , and the sub-pixels 901R, 901G, and 901B provided in the lower row are respectively By using this configuration, the scanning lines are Sub-pixels 901 of the same color are arranged alternately in the direction of extension of the conductor 925 having all the functions. This allows one data line to have the function of emitting light of the same color. In other words, the sub-pixels 901R can be electrically connected to each other. Two or more types of sub-pixels 901 among the sub-pixels 901A, 901B, and 901C form one data line. This can prevent the wiring from being electrically connected to the power supply line.

[0353] 41 is a cross-sectional view of the area indicated by the dashed line A1-A2 in FIG. A transistor 552 and a transistor 554 are provided on the transistor 552. An insulator 1022 is provided on the transistor 552 and on the transistor 554. An insulator 1023 is provided below the insulator 1021. In addition, between the substrate and the insulator 1021, the constituent elements of the layer 20 shown in FIG. 1A etc. (gate A driver circuit 21, a data driver circuit 22, a function circuit 40, etc. may be provided.

[0354] As shown in FIG. 41, the conductors provided on different layers function as plugs. Electrically connected via a conductor 990. For example, the conductor 915a and the conductor 915a The conductor 921 provided in the upper layer is electrically connected via the conductor 990. The conductor 990 is the same as the conductor 453, the conductor 305, the conductor 337, and the conductor 353, conductor 355, conductor 357, conductor 301a, conductor 301b, conductor 331 , the conductor 351, the conductor 333, and the conductor 335 can have the same structure.

[0355] An insulator 1024 is provided over the conductors 919 to 923 and over the insulator 1023. A conductor 924 is provided on the insulator 1024. 24 and the conductor 924 form a capacitor element 562.

[0356] An insulator 1025 is provided over the conductor 924 and the insulator 1024. An insulator 1026 is provided over the conductor 928 and the insulator 1025. An insulator 1027 is provided over the conductors 29 to 931 and the insulator 1026.

[0357] A conductor 772 and an insulator 730 are provided on the insulator 1027. The conductive layer 772 and the EL layer 730 may be configured to cover a part of the conductive layer 772. The light emitting element 572 is composed of the element 86 and the conductor 788 .

[0358] An adhesive layer 991 is provided on the conductor 788, and an insulator 992 is provided on the adhesive layer 991. The insulator 992 on the adhesive layer 991 can be formed by the following procedure. An insulator 992 is formed on a substrate different from the substrate on which the light emitting element 572 and the like are formed. Next, the conductor 788 and the insulator 992 are bonded together by an adhesive layer 991. The substrate on which the insulator 992 is formed is peeled off. It is possible.

[0359] A colored layer 993 is provided on the insulator 992. In FIG. The color layer 993 is provided with an adhesive layer 994. A substrate 995 is bonded to the substrate.

[0360] The colored layer 993b has a function of transmitting light of a color different from that of the colored layer 993a. The pixel 902 has a sub-pixel 901R that has a function of emitting red light, a sub-pixel 902B that has a function of emitting green light, and a sub-pixel 902C that has a function of emitting red light. The sub-pixel 901G has the function of emitting blue light, and the sub-pixel 901B has the function of emitting blue light. If the layer 993a has a function of transmitting red light, the colored layer 993b has a function of transmitting green or blue light. It has the ability to transmit light.

[0361] By forming a colored layer 993 on the insulator 992, the colored layer 993 and the light-emitting element 572 This allows easy alignment of the pixel of the display device of one embodiment of the present invention. The density can be increased.

[0362] <Display Device Configuration Example 5> FIG. 42A illustrates a configuration example of a subpixel 940 that can be used in a display device of one embodiment of the present invention. The sub-pixel 940 has a stacked structure of a sub-pixel 940_1 and a sub-pixel 940_2. The subpixel 940 can have a circuit configuration shown in FIG. The transistor 511 and the transistor 529 have a back gate in addition to a gate. The back gate of the transistor 513 is electrically connected to the wiring 31_1. The back gate is electrically connected to the wiring 31_2. The transistor 521 has a back gate, and the back gate is connected to the other electrode of the capacitor element 517. and electrically connected to one electrode of the light-emitting element 572 .

[0363] 42B is a top view showing a configuration example of the subpixel 940_1. 0_1 includes transistors, capacitors, conductors that form wiring, and semiconductors. There are.

[0364] As shown in FIG. 42B, the subpixel 940_1 includes a conductor 951, a semiconductor 952, and a semiconductor 953, conductor 954a, conductor 954b, conductor 955a, and conductor 955b. , conductor 956, conductor 957, conductor 958, conductor 959, conductor 960, , conductor 961, conductor 962, conductor 963, conductor 964, conductor 965, , conductor 966, and conductor 967.

[0365] The semiconductor 952 and the semiconductor 953 are formed in the same process, and are formed in a process after the conductor 951. Conductor 954a and conductor 954b, and conductor 955a and conductor The conductor 955b can be formed in the same process, but in a process after the conductor 951. The conductor 956 and the conductor 957 are formed in the same process, and the semiconductor 952 and the semiconductor 9 53, and conductors 954a, 954b, 955a, and 955b. It can be formed in a later step.

[0366] The conductors 958 to 962 are formed in the same process, and the conductors 956 and 957 The conductor 963 can be formed in a later step. The conductors 964 to 967 can be formed in the same process. The conductor 963 can be formed in a subsequent step.

[0367] The conductor 951 serves as a back gate electrode of the transistor 511 and the transistor 529. The conductor 951 corresponds to the wiring 31_1 that functions as a scan line. Respond.

[0368] The semiconductor 952 includes a channel formation region of the transistor 511. The conductor 954a The conductor serves as one of a source electrode and a drain electrode of the transistor 511. The transistor 954b functions as the other of the source and drain of the transistor 511. The electrode 956 functions as a gate electrode of the transistor 511 .

[0369] The semiconductor 953 includes a channel formation region of the transistor 529. The conductor 955a The conductor serves as one of a source electrode and a drain electrode of the transistor 529. The transistor 955b functions as the other of the source and drain of the transistor 529. The electrode 957 functions as a gate electrode of the transistor 529 .

[0370] The conductor 958 functions as one electrode of the capacitor 515. The conductor 964 serves as the other electrode of the capacitor 515. The conductor 965 corresponds to the wiring 32_1 having the function of a power supply line. Corresponding to line 543.

[0371] The conductor 951 is electrically connected to the conductor 962. The conductor 954a is electrically connected to the conductor 959. The conductor 954b is electrically connected to the conductor 958. The conductor 955a is electrically connected to the conductor 960. The conductor 955b is electrically connected to the conductor 961. electrically connected.

[0372] The conductor 956 and the conductor 957 are electrically connected to the conductor 962. The gate electrode of the transistor 511 and the gate electrode of the transistor 529 are connected to the scan line. The conductor 951 corresponding to the wiring 31_1 having the function as a A conductor 956 that functions as the gate electrode of the transistor 511 and a The gate electrode 957 is electrically connected to the conductor 957 which functions as the gate electrode of the gate electrode 29 .

[0373] The conductor 959 is electrically connected to the conductor 964. That is, the A conductor 954a that functions as either a source or a drain and a conductor 954b that functions as a data line and a conductor 964 having the same are electrically connected via a conductor 959.

[0374] The conductor 960 is electrically connected to the conductor 965. That is, the A conductor 955a having a function as either a source or a drain, and a conductor 955b having a function as a power supply line The conductor 965 is electrically connected to the conductor 960 .

[0375] The conductor 961 is electrically connected to the conductor 967. The conductor 963 is electrically connected to the conductor 966. are electrically connected.

[0376] The semiconductor 952 and the semiconductor 953 can include, for example, a metal oxide. The transistor 511 and the transistor 529 can be OS transistors. Additionally, semiconductor 952 and semiconductor 953 may comprise, for example, low temperature polysilicon. Therefore, the transistor 511 and the transistor 529 are LTPS transistors. This can be done.

[0377] In FIG. 43A, the subpixel 940_2 includes a transistor, a capacitor, a wiring, and the like. In FIG. 43B, in addition to the configuration shown in FIG. 43A, a light-emitting element 5 is 43A and 43B show a conductor 772 that functions as one electrode of the electrode 72. In either of FIG. 43B, a conductor having a function as the other electrode of the light emitting element 572 etc. are omitted.

[0378] As shown in FIGS. 43A and 43B, the subpixel 940_2 includes a conductor 968 and a conductor 96 9, a conductor 970, a semiconductor 971, a semiconductor 972, a conductor 973a, and a conductor 9 73b, conductor 974a, conductor 974b, conductor 975, conductor 976, and conductor Conductor 977, conductor 978, conductor 979, conductor 980, conductor 981, and conductor Conductor 982, conductor 983, conductor 984, conductor 985, conductor 986, and conductor The conductor 987 and the conductor 772 are included.

[0379] The conductors 968 to 970 can be formed in the same process. The conductors 968 to 970 are formed in the same process, and the semiconductor 972 is formed in a process after the conductors 968 to 970. Conductors 973a and 973b, and conductors 974a and The conductor 974b is formed in the same process, and is formed in a process after the conductors 968 to 970. The conductor 975 and the conductor 976 are formed in the same process. 971 and semiconductor 972, as well as conductors 973a, 973b, conductors 974a, and The conductor 974b can be formed in a subsequent step.

[0380] The conductors 977 to 981 are formed in the same process, and the conductors 975 and 976 The conductor 982 can be formed in a later step. The conductors 983 to 985 can be formed in the same process. The conductor 986 and the conductor 987 are formed in a process subsequent to the process for forming the conductor 982. The conductors 87 are formed in the same process and are formed in a process after the conductors 983 to 985. The conductor 772 can be formed in a step after the conductors 986 and 987. This can be done.

[0381] The conductor 968 functions as a back gate electrode of the transistor 513 and The semiconductor 971 corresponds to the wiring 31_2 having a function as a line. The conductor 973a has a channel formation region. The conductor 973b serves as one of the drain electrodes of the transistor 513. The conductor 975 serves as the other of the source electrode and the drain electrode of the transistor. It functions as the gate electrode of 513.

[0382] The conductor 970 functions as a back gate electrode of the transistor 521. The conductor 972 has a channel formation region of the transistor 521. The conductor 974 serves as one of the source and drain electrodes of the transistor 521. b functions as the other of the source electrode and the drain electrode of the transistor 521. The conductor 976 functions as a gate electrode of the transistor 521 .

[0383] The conductor 977 functions as one electrode of the capacitor 517. The conductor 983 serves as the other electrode of the capacitor 517. The conductor 986 corresponds to the wiring 32_2 having the function of a power supply line. The conductor 772 corresponds to the line 537. As described above, the conductor 772 serves as one electrode of the light-emitting element 572. It has all the functions.

[0384] The conductor 968 is electrically connected to the conductor 978. The conductor 969 is electrically connected to the conductor 977. The conductor 970 is electrically connected to the conductor 981. 3a is electrically connected to the conductor 979. The conductor 973b is electrically connected to the conductor 977. The conductor 974a is electrically connected to the conductor 980.

[0385] The conductor 974b is electrically connected to the conductor 981. The conductor 970 serving as a back gate electrode and the source electrode of the transistor 521 The conductor 974b having the function of the other of the input and output electrodes is connected to the conductor 974a via the conductor 981. and electrically connected.

[0386] The conductor 975 is electrically connected to the conductor 978. A conductor 968 having a function as a gate electrode of the transistor 513 The conductor 975, which functions as a In addition, the conductor 976 is electrically connected to the conductor 977 .

[0387] The conductor 979 is electrically connected to the conductor 983. That is, the A conductor 973a having a function as either a source or a drain, and a conductor 973b having a function as a data line and a conductor 983 having the same structure as the first embodiment are electrically connected via a conductor 979.

[0388] Conductor 980 is electrically connected to conductor 984. Conductor 981 is electrically connected to conductor 985. The conductor 982 is electrically connected to the conductor 985.

[0389] The conductor 984 is electrically connected to the conductor 986. a conductor 974a that functions as one of a source electrode and a drain electrode, and a The conductor 986 having the function of To be continued.

[0390] The conductor 985 is electrically connected to the conductor 987. The conductor 987 is electrically connected to the conductor 772. are electrically connected.

[0391] The semiconductor 971 and the semiconductor 972 can include, for example, a metal oxide. The transistor 513 and the transistor 521 can be OS transistors. Additionally, semiconductor 971 and semiconductor 972 may comprise, for example, low temperature polysilicon. Therefore, the transistor 513 and the transistor 521 are LTPS transistors. This can be done.

[0392] FIG. 44 is a top view showing the stacked structure of the subpixels 940_1 and 940_2. 9 shows the electrical connection relationship between the sub-pixel 940_1 and the sub-pixel 940_2. Therefore, the conductor 772 having a function as a pixel electrode and provided in the subpixel 940_2 is Not shown.

[0393] As shown in FIG. 44, a conductor 966 provided in the subpixel 940_1 and a conductor 966 provided in the subpixel 940_2 The sub-pixel 940_1 is electrically connected to a conductor 969 provided thereon. The other electrode of the capacitor 515 is connected to the transistor The other of the source and the drain of the transistor 513, the gate of the transistor 521, and the capacitor 517 The conductive layer provided in the sub-pixel 940_1 can be electrically connected to one of the electrodes of the conductive layer. The conductor 967 and the conductor 970 provided in the subpixel 940_2 are electrically connected to each other. As a result, the source or drain of the transistor 529 provided in the subpixel 940_1 The other electrode is connected to the other electrode of the capacitor 517 provided in the subpixel 940_2 and the transistor 52 The other of the source and drain of the light emitting element 572 is electrically connected to the other of the source and drain of the light emitting element 572. This can be done.

[0394] FIG. 45 shows a pixel 940 configured with sub-pixels 940 having the configuration shown in FIGS. 42B and 43B. 45 is a top view showing a configuration example of the sub-pixel 940R. In FIG. 45, the sub-pixel 940R has a function of emitting red light. The subpixel 940G has the function of emitting green light. The sub-pixel 940B has a function of emitting blue light. As shown in FIG. 45, a pixel is formed by a sub-pixel 940R, a sub-pixel 940G, and a sub-pixel 940B. Specifically, the sub-pixel 940R and the sub-pixel 941 are arranged in the upper row. A pixel 941 is formed by a sub-pixel 940B and a sub-pixel 940G provided in the lower row. In addition, the sub-pixel 940G provided in the upper row and the sub-pixel 940G provided in the lower row One pixel 941 is composed of the sub-pixel 940R and the sub-pixel 940B.

[0395] In FIG. 45, the subpixels 940R, 940G, and 940B are arranged in the upper row. , and the sub-pixels 940R, 940G, and 940B provided in the lower row are respectively By using this configuration, the scanning lines are The conductor 951 and the conductor 968 have the same color subpixels in the extending direction. 940 can be arranged alternately. This allows one data line to carry light of the same color. The sub-pixels 940 having the function of emitting light can be electrically connected. and two or more types of subpixels 940R, 940G, and 940B. 40 can be prevented from being electrically connected to one data line.

[0396] Fig. 46 is a cross-sectional view of the area indicated by the dashed line A3-A4 in Figs. 42B and 43B. On the substrate 1031, a transistor 5, which is a transistor provided in the subpixel 940_1, is provided. 11 and a transistor 529 are provided. An insulator 1032 is provided on the resistor 529, and an insulator 1033 is provided on the insulator 1032. A substrate is provided below the insulator 1031. Between the insulating film 1031 and the insulating film 1032, the components of the layer 20 shown in FIG. 1A and the like (the gate driver circuit 21, A data driver circuit 22, a functional circuit 40, etc. may be provided.

[0397] As shown in FIG. 46, the conductors provided on different layers function as plugs. Electrical connection is made via conductor 990.

[0398] An insulator 1034 is provided over the conductors 958 to 962 and the insulator 1033. A conductor 963 is provided on the insulator 1034. The capacitor 515 is formed by the capacitor 34 and the conductor 963 .

[0399] An insulator 1035 is provided over the conductor 963 and the insulator 1034. An insulator 1036 is provided over the conductor 967 .

[0400] On the insulator 1036, a transistor, which is a transistor provided in the subpixel 940_2, is provided. 513 and a transistor 521 are provided. An insulator 1042 is provided on the transistor 521, and an insulator 1043 is provided on the insulator 1042. will be established.

[0401] An insulator 1044 is provided over the conductors 977 to 981 and the insulator 1043. A conductor 982 is provided on the insulator 1044. 4 and the conductor 982 form a capacitor element 517.

[0402] An insulator 1045 is provided on the conductor 982 and the insulator 1044. An insulator 1046 is provided over the conductor 985 and the insulator 1045. An insulator 1047 is provided on 86, on the conductor 987, and on the insulator 1046.

[0403] A conductor 772 and an insulator 730 are provided on the insulator 1047. As shown, the insulator 730 may be configured to partially cover the conductor 772. The conductor 772, the EL layer 786, and the conductor 788 constitute the light-emitting element 572. do.

[0404] 41, an adhesive layer 991 is provided on the conductor 788. An insulator 992 is provided on the insulating layer 991. Furthermore, a coloring layer 993 is provided on the insulating layer 992. A substrate 995 is attached onto the colored layer 993 with an adhesive layer 994 .

[0405] <Configuration example of light-emitting element> 47A to 47E are diagrams showing examples of the configuration of a light emitting element 572. The structure shown is a single structure in which an EL layer 786 is sandwiched between a substrate 772 and a conductor 788. As described above, the EL layer 786 includes a light-emitting material, for example, an organic compound light-emitting material. Included.

[0406] FIG. 47B is a diagram showing the laminated structure of the EL layer 786. Here, the structure shown in FIG. In the optical element 572, the conductor 772 functions as an anode, and the conductor 788 functions as a cathode. It has the following functions.

[0407] The EL layer 786 is formed by stacking a hole injection layer 721, a hole transport layer 722, a light-emitting layer 723, and a conductor 772 thereon. 23, an electron transport layer 724, and an electron injection layer 725 are laminated in this order. When the conductor 772 functions as a cathode and the conductor 788 functions as an anode, The stacking order is reversed.

[0408] The light-emitting layer 723 has a light-emitting material or a combination of materials, and emits a desired light color. The light-emitting layer 723 can have a structure in which fluorescent light or phosphorescent light can be emitted. It is also possible to use a laminated structure in which different light colors are emitted. In this case, the light emitting layer to be used for each laminated light emitting layer may have a different color. The material and other materials may be different materials.

[0409] In the light emitting element 572, for example, the conductor 772 shown in FIG. 47B is used as a reflective electrode, and the conductor 788 is used as a semi-transparent and semi-reflective electrode, forming a micro-optical resonator (microcavity) structure. This allows light emitted from the light-emitting layer 723 included in the EL layer 786 to resonate between the two electrodes, The light emitted through the conductor 788 can be intensified.

[0410] The conductor 772 of the light-emitting element 572 is made of a conductive material having reflectivity and a conductive material having light-transmitting property. When the reflective electrode has a laminated structure with a conductive material (transparent conductive film), the thickness of the transparent conductive film is Specifically, the light emitted from the light-emitting layer 723 can be adjusted by controlling the light intensity. The distance between the electrodes of the conductor 772 and the conductor 788 is mλ / 2 (only) for the wavelength λ of the light. It is preferable to adjust the value so that it is close to m (where m is a natural number).

[0411] In order to amplify the desired light (wavelength: λ) obtained from the light emitting layer 723, the conductor 77 2 to the region (light emitting region) of the light emitting layer 723 where desired light is obtained, and 88 to the region (light emitting region) of the light emitting layer 723 where desired light is obtained, and It is preferable to adjust them so that they are close to (2m'+1)λ / 4 (where m' is a natural number). The light-emitting region here refers to the region where holes and electrons in the light-emitting layer 723 are released. The recombination region is shown.

[0412] By performing such optical adjustment, the spectrum of a specific monochromatic light obtained from the light-emitting layer 723 can be adjusted. This narrows the linewidth of the light and allows light emission with good color purity to be obtained.

[0413] However, in the above case, strictly speaking, the optical distance between the conductor 772 and the conductor 788 is This can be said to be the total thickness from the reflective area in the conductor 788 to the reflective area in the conductor 788. However, it is difficult to precisely determine the reflection area of the conductor 772 and the conductor 788. Therefore, it is sufficient to assume that any position of the conductor 772 and the conductor 788 is a reflection area. The effect of the above can be obtained. Strictly speaking, the optical distance between the reflective area of the conductor 772 and the light emitting area where the desired light is obtained is However, in the conductor 772, It is difficult to precisely determine the reflection area in the light-emitting layer and the light-emitting area in the light-emitting layer from which the desired light is obtained. Therefore, any position of the conductor 772 may be set as a reflection region, and any position of the light-emitting layer from which desired light can be obtained may be set as a reflection region. The above-mentioned effect can be sufficiently obtained by assuming any position as the light-emitting region.

[0414] The light-emitting element 572 shown in FIG. 47B has a microcavity structure, and therefore the same EL layer is Therefore, different wavelengths of light (monochromatic light) can be extracted. This eliminates the need for separate coloring (e.g., RGB) to achieve high definition. It is also possible to combine it with a colored layer. Since it is possible to increase the light emission intensity in the opposite direction, it is possible to reduce power consumption.

[0415] The light emitting element 572 shown in FIG. 47B does not necessarily have a microcavity structure. In this case, the light emitting layer 723 is structured to emit white light, and a colored layer is provided to It is possible to extract light of a specific color (for example, RGB). In this case, if different colors are applied to obtain different luminescent colors, it is possible to emit light of a desired color without providing a colored layer. It can be taken out.

[0416] At least one of the conductor 772 and the conductor 788 is a light-transmitting electrode (a transparent electrode, a semi-transmitting electrode, a When the electrode having light-transmitting properties is a transparent electrode, the transparent electrode The visible light transmittance of the electrode is 40% or more. The reflectance of the semi-reflective electrode for visible light is 20% or more and 80% or less, preferably 40% or more and 70% or less. The resistivity of these electrodes is 1×10 -2 Ωcm or less is preferable.

[0417] When the conductor 772 or the conductor 788 is an electrode having reflectivity (a reflective electrode), the reflective The reflectance of the electrode having the visible light is 40% or more and 100% or less, preferably 70% or more and 10 0% or less. The resistivity of this electrode is 1×10 -2 Ωcm or less is preferable.

[0418] The light emitting element 572 may have a configuration shown in FIG. Two EL layers (EL layer 786a and EL layer 786b) are provided between the light emitting element 2 and the conductor 788. The charge generating layer 792 is disposed between the EL layer 786a and the EL layer 786b. The light emitting element 572 has a tandem structure. The current efficiency and external quantum efficiency of the element 572 can be improved. It is possible to display a high-brightness image. In addition, the power consumption of the display device 10 can be reduced. Here, the EL layer 786a and the EL layer 786b are the same as the EL layer 786 shown in FIG. A similar configuration can be used.

[0419] The charge generating layer 792 generates an EL when a voltage is applied between the conductor 772 and the conductor 788. Electrons are injected into one of the layer 786a and the EL layer 786b, and holes are injected into the other. Therefore, the potential of the conductor 772 becomes higher than the potential of the conductor 788. When a voltage is applied so that the charge generation layer 792 is injecting electrons into the EL layer 786a, Holes are injected from the charge generating layer 792 into the EL layer 786b.

[0420] In addition, the charge generation layer 792 transmits visible light from the viewpoint of light extraction efficiency (specifically, It is preferable that the visible light transmittance of the charge generating layer 792 is 40% or more. The conductivity of the generating layer 792 is lower than the conductivity of the conductor 772 or the conductivity of the conductor 788. Good too.

[0421] The light emitting element 572 may have a configuration shown in FIG. Between the electrode 2 and the conductor 788, three EL layers (EL layer 786a, EL layer 786b, and EL layer 786c) are provided between the EL layer 786a and the EL layer 786b, and between the EL layer 786b and the EL layer 786c. The light emitting element 572 has a tandem structure and includes a charge generating layer 792 between the EL layer 786c. Here, the EL layer 786a, the EL layer 786b, and the EL layer 786c are the same as those shown in FIG. The light emitting element 572 may have the same structure as the L layer 786. This can further increase the current efficiency and external quantum efficiency of the light emitting element 572. Therefore, it is possible to display an image with higher brightness on the display device 10. 10, the power consumption can be further reduced.

[0422] The light emitting element 572 may have a configuration shown in FIG. Between the conductor 788 and the n-th EL layer (EL layer 786(1) to EL layer 786(n)) and a tandem structure light-emitting device having a charge generation layer 792 between each EL layer 786. 47B shows the photonic device 572, where EL layers 786(1) through 786(n) are the same as those shown in FIG. 47E, the EL layer 78 can have the same structure as the EL layer 786 shown in FIG. 6, EL layer 786(1), EL layer 786(m), EL layer 786(m+1), and E L layer 786(n) is shown. Here, m is an integer equal to or greater than 2 and less than n, and n is greater than m. The larger the value of n, the higher the current efficiency and external quantum efficiency of the light emitting element 572. Therefore, a high brightness image can be displayed on the display device 10. This allows the power consumption of the display device 10 to be reduced.

[0423] The configuration examples exemplified in this embodiment and the corresponding drawings etc. are at least partially It can be implemented in appropriate combination with other configuration examples or drawings, etc.

[0424] This embodiment may be appropriately combined with at least a part of another embodiment described in this specification. It can be implemented in combination.

[0425] (Embodiment 2) In this embodiment, a transistor that can be used in a display device according to one embodiment of the present invention will be described. We will explain about this.

[0426] <Transistor configuration example 1> 48A to 48C show transistors that can be used in a display device according to one embodiment of the present invention. 1A and 1B are a top view and a cross-sectional view of a transistor 200A and the periphery thereof. 1, a display unit 33, a gate driver circuit 21, a data driver circuit 22, and a functional circuit The transistor 200A can be applied to the transistor included in the circuit 40.

[0427] FIG. 48A is a top view of a transistor 200A. Also, FIGS. 48B and 48C are 48B is a cross-sectional view of the transistor 200A taken along a line A1-A2 in FIG. 1 is a cross-sectional view of the portion indicated by the dashed line, and is also a cross-sectional view of the transistor 200A in the channel length direction. FIG. 48C is a cross-sectional view of the area indicated by the dashed line A3-A4 in FIG. 48A. It is also a cross-sectional view of the transistor 200A in the channel width direction. For clarity of illustration, some elements have been omitted.

[0428] The transistor 200A includes a metal oxide 230a disposed on a substrate (not shown). , a metal oxide 230b disposed on the metal oxide 230a, and a metal oxide 230b disposed on the metal oxide 230b. Conductor 242a and conductor 242b are spaced apart from each other, and conductor 242a and conductor 242b, and an opening is formed between conductor 242a and conductor 242b. the insulator 280 formed thereon, the conductor 260 disposed in the opening, and the metal oxide 230b; The conductor 242a, the conductor 242b, and the insulator 280 are disposed between the conductor 260. The insulator 250 is made of a metal oxide 230b, a conductor 242a, a conductor 242b, and an insulator. The metal oxide 230c is disposed between the insulating body 280 and the insulating body 250. 48B and 48C, the upper surface of the conductor 260 is covered with the insulator 250. 254, metal oxide 230c, and insulator 280. In the following, metal oxide 230a, metal oxide 230b, and metal oxide 230c These may be collectively referred to as metal oxide 230. b may be collectively referred to as conductor 242.

[0429] As shown in FIG. 48B, transistor 200A has a conductor 242a and a conductor 242b. The side surface on the conductor 260 side has a substantially vertical shape. The conductor 242a and the conductor 242b may be arranged on the side of the conductor 242a. The angle between the top and bottom surfaces is 10° to 80°, preferably 30° to 60°. Alternatively, the opposing side surfaces of the conductor 242a and the conductor 242b may have a plurality of surfaces. It's fine.

[0430] As shown in FIGS. 48B and 48C, the insulator 224, the metal oxide 230a, the metal oxide The metal oxide 230c is made of an insulator 230b, a conductor 242a, a conductor 242b, and a metal oxide 230c. 80 and an insulator 254 is preferably disposed between them. As shown in FIGS. 48B and 48C, the side surface of the metal oxide 230c, the top surface of the conductor 242a, and The side surface, the top surface and side surface of the conductor 242b, the side surface of the metal oxide 230a, and the top surface and side surface of the metal oxide 230b It is preferable that the insulating material 224 has a side surface and an area in contact with the top surface of the insulating material 224 .

[0431] In the transistor 200A, a region where a channel is formed (hereinafter, referred to as a channel forming region) ) and in the vicinity thereof, metal oxide 230a, metal oxide 230b, and gold Although the structure in which three layers of metal oxide 230c are stacked is shown, one embodiment of the present invention is For example, a two-layer structure of metal oxide 230b and metal oxide 230c, Alternatively, a stacked structure of four or more layers may be provided. Although the conductor 260 is shown as having a two-layer stacked structure, one embodiment of the present invention is not limited to this. For example, the conductor 260 may have a single layer structure or a laminated structure of three or more layers. In addition, the metal oxide 230a, the metal oxide 230b, and the metal oxide 230 Each of c may have a laminated structure of two or more layers.

[0432] For example, metal oxide 230c may comprise a first metal oxide and a second metal oxide on the first metal oxide. In the case where the first metal oxide has a laminated structure made of a metal oxide, the first metal oxide is The second metal oxide preferably has a composition similar to that of the metal oxide 230a. It's nice.

[0433] Here, the conductor 260 functions as the gate electrode of the transistor, and the conductors 242a and The conductors 242b function as a source electrode and a drain electrode, respectively. The conductor 260 is sandwiched between the opening of the insulator 280 and the conductors 242a and 242b. The conductor 260, the conductor 242a, and the conductor 242b are formed so as to be embedded in the region. The placement of the conductive material 242b is selected to be self-aligned with the opening of the insulator 280. In the transistor 200A, the gate electrode is connected between the source electrode and the drain electrode. Therefore, the conductor 260 can be arranged in a self-aligned manner with a margin for alignment. Since the transistor 200A can be formed without any additional wiring, the area occupied by the transistor 200A can be reduced. This allows the display device to have high definition. It can be made into an edge.

[0434] As shown in FIG. 48B, the conductor 260 is a conductor provided inside the insulator 250. 260a, and a conductor 260b provided so as to be embedded inside the conductor 260a, It is preferred that the compound has the following structure:

[0435] As shown in FIGS. 48A to 48C, the transistor 200A has a substrate (not shown). an insulator 214 disposed on the insulating layer 214; an insulator 216 disposed on the insulating layer 214; The conductor 205 is disposed so as to be embedded in the insulator 216, and the insulator 216 and the conductor 2 an insulator 222 disposed on the insulating layer 05; and an insulator 224 disposed on the insulating layer 222. It is preferable that the metal oxide 230a is disposed on the insulator 224. It is preferable that:

[0436] In addition, an insulator 274 serving as an interlayer film and an insulator 2 Here, the insulator 274 is preferably disposed between the conductor 260 and the insulator 25. 0, insulator 254, metal oxide 230c, and insulator 280 are disposed in contact with the upper surfaces thereof. It is preferable that:

[0437] The insulators 222, 254, and 274 are made of hydrogen (e.g., hydrogen atoms, hydrogen molecules, etc.). For example, the insulator 22 has a function of suppressing the diffusion of at least one of the above. 2, insulator 254, and insulator 274 are insulators 224, 250, and 28 It is preferable that the hydrogen permeability is lower than 0. Also, the insulator 222 and the insulator 254 are The material has the function of suppressing the diffusion of oxygen (for example, at least one of oxygen atoms, oxygen molecules, etc.). For example, the insulator 222 and the insulator 254 are preferably , and preferably has lower oxygen permeability than insulator 280.

[0438] Here, the insulator 224, the metal oxide 230, and the insulator 250 are insulator 280 and insulating The insulator 281 is separated from the insulator 254 by the insulator 274. 224, metal oxide 230, and insulator 250, insulator 280 and insulator 281 This can prevent impurities such as hydrogen and excess oxygen from being mixed in.

[0439] Also, a conductor 240 (conductor) electrically connected to the transistor 200A and functioning as a plug It is preferable that a conductor 240a and a conductor 240b are provided. The insulator 241 (insulator 241a and insulator 241b) is disposed on the side of the functional conductor 240. b) are provided. That is, the insulator 254, the insulator 280, the insulator 274, and the insulator 2 An insulator 241 is provided in contact with the inner wall of the opening of the insulating member 81. The first conductor of the conductor 240 is provided on the inner side, and the second conductor of the conductor 240 is provided on the inner side. Here, the height of the upper surface of the conductor 240 and the height of the upper surface of the insulator 281 may be In the transistor 200A, the first conductor of the conductor 240 The present invention is not limited to the above embodiment, but may be modified in various ways. The embodiment is not limited to this. For example, the conductor 240 may be a single layer or a stack of three or more layers. When the structure has a laminated structure, an ordinal number is assigned to the order of formation. There may be cases where a distinction is made.

[0440] The transistor 200A also includes a metal oxide 230 (metal oxide 230a, metal oxide 230b, and metal oxide 230c) function as oxide semiconductors. It is preferable to use a metal oxide (hereinafter also referred to as an oxide semiconductor) having such a metal oxide. The metal oxide forming the channel region of the metal oxide 230 is, as described above, a band gap metal oxide. It is preferable to use a material with a gap of 2 eV or more, preferably 2.5 eV or more. By using metal oxides with a wide band gap, the off-state current of transistors can be reduced. By using such a transistor, a display device with low power consumption can be provided. Can be provided.

[0441] As shown in FIG. 48B, the metal oxide 230b is formed in the region that does not overlap with the conductor 242. The film thickness may be thinner than the film thickness in the area overlapping with the conductor 242. When forming the metal oxide film 230b and the conductor 242b, a part of the upper surface of the metal oxide film 230b is removed. On the upper surface of the metal oxide 230b, a conductive film that becomes the conductor 242 is formed. When the conductive film is heated, a region with low resistance may be formed near the interface with the conductive film. and a resistor located between the conductor 242a and the conductor 242b on the upper surface of the metal oxide 230b. By removing the region with low conductivity, the formation of a channel in the region is suppressed. can be done.

[0442] According to one embodiment of the present invention, a display device having a small-sized transistor and high resolution can be provided. Alternatively, a display device having a transistor with large on-state current and high luminance can be provided. Alternatively, a display device having a high-speed transistor and a high-speed operation can be provided. Alternatively, a highly reliable display device having a transistor with stable electrical characteristics can be provided. Alternatively, a display device having a transistor with low off-state current and low power consumption can be provided. It is possible to provide a display device with low

[0443] Detailed structure of a transistor 200A that can be used in a display device according to one embodiment of the present invention This article explains:

[0444] The conductor 205 is arranged so as to have an overlapping region with the metal oxide 230 and the conductor 260. In addition, the conductor 205 is preferably embedded in the insulator 216. Therefore, it is preferable to improve the flatness of the upper surface of the conductor 205. For example, The average surface roughness (Ra) of the upper surface is 1 nm or less, preferably 0.5 nm or less, and more preferably 0 This allows the insulator 224 formed on the conductor 205 to be 0.3 nm or less. and improve the crystallinity of the metal oxide 230b and the metal oxide 230c. It is possible.

[0445] Here, the conductor 260 functions as a first gate (also called a top gate) electrode. The conductor 205 may also be used as a second gate (also called a back gate) electrode. In this case, the potential applied to the conductor 205 may be changed to the potential applied to the conductor 260. By changing the voltage independently of the voltage applied to the transistor 200A, the V th Control In particular, applying a negative potential to the conductor 205 can control the transistor. 200A V th By increasing the voltage above 0 V, it is possible to reduce the off-state current. Therefore, applying a negative potential to the conductor 205 increases the current density of the conductor 260 compared to when no negative potential is applied. The drain current of the transistor 200A when the potential applied to the can.

[0446] The conductor 205 is formed to be larger than the channel forming region in the metal oxide 230. In particular, as shown in FIG. 48C, the conductor 205 has a channel width of the metal oxide 230. It is preferable that the metal layer extends in the region outside the end portion intersecting with the direction of the gold. The metal oxide 230 is provided on the outer side of the side surface in the channel width direction with a conductor 205 and a conductor It is preferable that the wiring 260 overlaps with an insulator therebetween.

[0447] With the above configuration, the electric field of the conductor 260 that functions as the first gate electrode and The metal oxide 23 is then electrically connected to the conductor 205, which functions as a second gate electrode. The channel forming region of 0 can be electrically surrounded.

[0448] As shown in FIG. 48C, the conductor 205 is extended to function as wiring. However, the present invention is not limited to this, and a conductor that functions as a wiring may be provided under the conductor 205. It may be configured to provide

[0449] The conductor 205 is made of a conductive material containing tungsten, copper, or aluminum as a main component. Although the conductor 205 is illustrated as a single layer, it may have a laminated structure. For example, a laminate of titanium or titanium nitride and the above conductive material may be used.

[0450] Also, hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, and nitrogen oxides are present under the conductor 205. It has the function of suppressing the diffusion of impurities such as molecules (N2O, NO, NO2, etc.) and copper atoms (see above). Alternatively, a conductor may be provided that is impervious to impurities. A conductive material having a function of suppressing the diffusion of at least one of the oxygen molecules (the oxygen is difficult to permeate). In this specification, it is preferable to provide a conductive material to suppress the diffusion of impurities or oxygen. The function of suppressing the diffusion of either or both of the above impurities and the above oxygen is Let's say.

[0451] By providing a conductor having a function of suppressing oxygen diffusion under the conductor 205, The conductivity of the conductive material 205 can be prevented from decreasing due to oxidation. The conductive material may be, for example, tantalum, tantalum nitride, ruthenium, or ruthenium oxide. Therefore, it is preferable to use the conductive material as the conductor 205. It may be a single layer or a multilayer.

[0452] The insulator 214 prevents impurities such as water or hydrogen from entering the transistor 200A from the substrate side. It is preferable that the insulator has a function as a barrier insulating film that suppresses this. 214 is a hydrogen atom, a hydrogen molecule, a water molecule, a nitrogen atom, a nitrogen molecule, a nitrogen oxide molecule (N2O, It has the function of suppressing the diffusion of impurities such as NO, NO2, copper atoms (the above impurities do not penetrate It is preferable to use an insulating material. Insulation that has the function of suppressing the diffusion of at least one of the molecules (the oxygen is difficult to permeate) It is preferable to use a non-reactive material.

[0453] For example, it is preferable to use aluminum oxide or silicon nitride as the insulator 214. This allows impurities such as water or hydrogen to pass through the insulator 214 from the substrate side to the transistor. Alternatively, oxygen contained in the insulator 224 or the like can be prevented from diffusing to the insulating side. This can prevent diffusion of the ions toward the substrate side from the body 214.

[0454] The insulators 216, 280, and 281, which function as interlayer films, are insulators It is preferable that the dielectric constant of the interlayer film is lower than that of 214. By using a material with a low dielectric constant as the interlayer film, The parasitic capacitance between the lines can be reduced. For example, the insulators 216, 280, The insulator 281 may be silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, or the like. silicon dioxide doped with fluorine, silicon dioxide doped with carbon, carbon and nitrogen Additive silicon oxide, silicon oxide having vacancies, or the like may be used as appropriate.

[0455] The insulators 222 and 224 function as gate insulators.

[0456] Here, the insulator 224 in contact with the metal oxide 230 is preferably capable of desorbing oxygen by heating. In this specification, the oxygen released by heating may be referred to as excess oxygen. For example, The insulator 224 may be made of silicon oxide, silicon oxynitride, or the like as appropriate. By providing an insulator containing the metal oxide 230 in contact with the metal oxide 230, oxygen vacancies in the metal oxide 230 can be eliminated. This can reduce the resistance and improve the reliability of the transistor 200A.

[0457] Specifically, the insulator 224 is made of an oxide material from which part of the oxygen is released by heating. The oxide that releases oxygen by heating is preferably a TDS (Thermal Desorption In the sorption spectroscopy analysis, the amount of oxygen converted to oxygen atoms was The amount of desorption is 1.0×10 18 atoms / cm3 or more, preferably 1.0 × 10 19 ato ms / cm 3 More preferably, 2.0 × 10 19 atoms / cm 3 or more, or 3 .0×10 20 atoms / cm 3 The oxide film is as above. The surface temperature of the film is 100°C or more and 700°C or less, or 100°C or more and 400°C or less. The lower range is preferred.

[0458] Also, as shown in FIG. 48C, the insulator 224 does not overlap with the insulator 254 and is formed on the metal oxide. The film thickness in the region not overlapping with the object 230b may be thinner than the film thickness in the other region. In the insulator 224, there is a portion that does not overlap with the insulator 254 and does not overlap with the metal oxide 230b. The thickness of the region is preferably such that the oxygen can be sufficiently diffused.

[0459] The insulator 222, like the insulator 214, prevents impurities such as water or hydrogen from penetrating the transistor from the substrate side. It is preferable that the insulating film has a function as a barrier insulating film that prevents the inclusion of the insulating film in the resistor 200A. For example, it is preferable that the insulator 222 has a lower hydrogen permeability than the insulator 224. The insulator 224, the metal oxide 230 are formed by the insulator 222, the insulator 254, and the insulator 274. By surrounding the insulator 250 and the like, impurities such as water or hydrogen from the outside can be prevented from entering the transistor. It can prevent current from entering 200A.

[0460] Furthermore, the insulator 222 is resistant to the diffusion of oxygen (e.g., at least one of oxygen atoms, oxygen molecules, etc.). It is preferable that the insulator 2 has a function of suppressing the oxygen permeation (i.e., the oxygen is less likely to permeate). Preferably, insulator 222 has a lower oxygen permeability than insulator 224. By having the function of suppressing the diffusion of impurities, the oxygen contained in the metal oxide 230 does not migrate to the substrate side. In addition, the conductor 205 is preferably formed of the insulator 224. This can prevent the reaction between the oxygen contained in the metal oxide 230 and the oxygen contained in the metal oxide 230 .

[0461] The insulator 222 is an oxide of one or both of aluminum and hafnium, which are insulating materials. It is advisable to use an insulator containing oxides of one or both of aluminum and hafnium. It is preferable to use aluminum oxide or hafnium oxide as the insulating material. It is preferable to use oxides containing aluminum and hafnium (hafnium aluminate). When the insulator 222 is formed using such a material, the insulator 222 is preferably a metal oxide. The release of oxygen from the metal oxide 230 and the removal of the metal oxide 230 from the periphery of the transistor 200A. The layer functions as a layer that suppresses the intrusion of impurities such as hydrogen into the semiconductor layer.

[0462] Alternatively, these insulators may be made of, for example, aluminum oxide, bismuth oxide, or germanium oxide. , niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, oxide Zirconium may be added, or these insulators may be nitrided. Silicon oxide, silicon oxynitride, or silicon nitride may be laminated on the body.

[0463] The insulator 222 may be, for example, aluminum oxide, hafnium oxide, tantalum oxide, or oxide. Zirconium oxide, lead zirconate titanate (PZT), strontium titanate (SrTi Insulators containing so-called high-k materials such as (Ba,Sr)TiO3 (BST) or (Ba,Sr)TiO3 (BST) As transistors become smaller and more highly integrated, Thinning of the gate insulator may cause problems such as leakage current. By using high-k materials as insulators that function as a transistor, the physical thickness can be maintained. This makes it possible to reduce the gate potential during start operation.

[0464] The insulator 222 and the insulator 224 may have a laminated structure of two or more layers. In this case, the laminate structure is not limited to the same material, but may be a laminate structure made of different materials. For example, an insulator similar to the insulator 224 may be provided below the insulator 222.

[0465] The metal oxide 230 is a metal oxide 230a and a metal oxide 230 on the metal oxide 230a. b and a metal oxide 230c on the metal oxide 230b. By having the metal oxide 230a in the It is possible to suppress the diffusion of impurities from the metal oxide 230b to the metal oxide 230b. By having the metal oxide 230c on the metal oxide layer 30b, the metal oxide layer 230c is formed above the metal oxide layer 230c. This can suppress the diffusion of impurities from the structure into the metal oxide 230b.

[0466] The metal oxide 230 has a laminated structure of a plurality of oxide layers with different atomic ratios of each metal atom. Specifically, the metal oxide used for the metal oxide 230a preferably has the following properties: The atomic ratio of element M in the constituent elements is It is preferable that the atomic ratio of the element M in the metal oxide 230a is larger than that of the element M in the metal oxide 230a. In the metal oxide used, the atomic ratio of element M to In is In the metal oxide, the atomic ratio of element M to In is preferably larger than that of element M. In the metal oxide used for the metal oxide 230b, the atomic ratio of In to the element M is In the metal oxide used for the metal oxide 230a, the atomic ratio of In to the element M is greater than In addition, the metal oxide 230c is preferably the same as the metal oxide 230a or the metal oxide Any metal oxide that can be used for 230b can be used.

[0467] The metal oxide 230a, the metal oxide 230b, and the metal oxide 230c have crystallinity. It is preferable to use CAAC-OS (c-axis aligned crystal). It is preferable to use a line oxide semiconductor. Crystalline oxides such as AC-OS have few impurities and defects (oxygen vacancies, etc.) and are crystalline. Therefore, the metal oxide film formed by the source electrode or the drain electrode is This can suppress the extraction of oxygen from the oxide 230b. Even in this case, it is possible to prevent oxygen from being extracted from the metal oxide 230b. Therefore, the transistor 200A is subjected to high temperatures (so-called thermal budget) during the manufacturing process. ) is stable.

[0468] In addition, the energy of the bottom of the conduction band of the metal oxide 230a and the metal oxide 230c is It is preferable that the energy of the SiO 2 layer is higher than the energy of the bottom of the conduction band of the oxide 230b. The electron affinity of the metal oxide 230a and the metal oxide 230c is In this case, the metal oxide 230c has an electron affinity smaller than that of the metal oxide 230c. It is preferable to use a metal oxide that can be used for 30a. In the metal oxide used in the product 230c, the atomic ratio of element M in the constituent elements is In the metal oxide used in 230b, the atomic ratio of element M in the constituent elements is larger than that In addition, in the metal oxide used for the metal oxide 230c, the element M relative to In is preferably The atomic ratio of the element M to In in the metal oxide used for the metal oxide 230b is It is preferable that the atomic ratio is larger than that of the metal oxide 230b. In the metal oxide 230c, the atomic ratio of In to the element M is It is preferable that the atomic ratio of In to the element M is larger than that of In.

[0469] Here, at the junction of the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c, In other words, the energy level of the conduction band minimum changes gradually. The energy of the conduction band minimum at the junction of the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c. The energy level can be said to change continuously or to be a continuous junction. In order to achieve this, the interface between the metal oxide 230a and the metal oxide 230b and the metal oxide 230b The defect level density of the mixed layer formed at the interface between the metal oxide 230c and the silicon dioxide 230a is preferably reduced. stomach.

[0470] Specifically, the metal oxide 230a and the metal oxide 230b, the metal oxide 230b and the metal oxide The substance 230c has a common element other than oxygen (as a main component), so that the defect level density For example, a mixed layer with a low In-Ga-Zn In the case of oxides, metal oxide 230a and metal oxide 230c are In-Ga-Zn oxide. Alternatively, a metal oxide 230c may be used. For example, a laminated structure may be used. A laminated structure of Ga-Zn oxide on a substrate, or In-Ga-Zn oxide and the In-Ga In other words, a laminated structure of In-Zn oxide and gallium oxide can be used. A laminated structure of Ga-Zn oxide and oxide not containing In was used as metal oxide 230c. It may be used.

[0471] Specifically, the metal oxide 230a is In:Ga:Zn=1:3:4 [atomic ratio], Alternatively, a metal oxide having an atomic ratio of 1:1:0.5 may be used. b is In:Ga:Zn=4:2:3 [atomic ratio] or 3:1:2 [atomic ratio] The metal oxide 230c may be In:Ga:Zn=1: 3:4 [atomic ratio], In:Ga:Zn=4:2:3 [atomic ratio], Ga:Zn=2:1 [atomic ratio], or a metal oxide of Ga:Zn=2:5 [atomic ratio] may be used. A specific example of the metal oxide 230c having a laminated structure is In:Ga:Zn=4: 2:3 [atomic ratio] and Ga:Zn=2:1 [atomic ratio] layered structure, In:Ga:Zn = 4:2:3 [atomic ratio] and Ga:Zn = 2:5 [atomic ratio], :Zn=4:2:3 [atomic ratio] and gallium oxide.

[0472] At this time, the main path of the carriers is the metal oxide 230b. By configuring the metal oxide 230a and the metal oxide 230c as described above, Defect levels at the interface with metal oxide 230b and the interface between metal oxide 230b and metal oxide 230c The density can be reduced, so the effect of interface scattering on carrier conduction is small. As a result, the transistor 200A can achieve a high on-state current and high frequency characteristics. When the metal oxide 230c has a laminated structure, the metal oxide 230b and the metal oxide In addition to the effect of reducing the defect level density at the interface with the metal oxide 230c, It is expected that the constituent elements of the insulating material 250 are prevented from diffusing into the insulating material 250. Specifically, the metal oxide 230c has a laminated structure, and an oxide layer not containing In is provided above the laminated structure. By positioning the object, it is possible to suppress In that may diffuse to the insulator 250 side. 250 acts as a gate insulator, so if In diffuses, the transistor characteristics will be affected. Therefore, by forming the metal oxide 230c into a laminated structure, a highly reliable surface can be obtained. It is therefore possible to provide a display device.

[0473] On the metal oxide 230b, a conductor 242 is formed, which functions as a source electrode and a drain electrode. (conductor 242a and conductor 242b) are provided. The conductor 242 is made of aluminum. Aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum, tungsten Stainless steel, hafnium, vanadium, niobium, manganese, magnesium, zirconium, Selected from the group consisting of lilium, indium, ruthenium, iridium, strontium, and lanthanum. or an alloy containing the above-mentioned metal elements, or a combination of the above-mentioned metal elements. It is preferable to use alloys such as tantalum nitride, titanium nitride, tungsten, Nitrides containing titanium and aluminum, nitrides containing tantalum and aluminum, ruthenium oxide Ruthenium, ruthenium nitride, oxides containing strontium and ruthenium, lanthanum and nickel It is preferable to use oxides containing tantalum nitride, titanium nitride, titanium and tantalum nitride, etc. Aluminum nitride, tantalum and aluminum nitride, ruthenium oxide, nitride Ruthenium, oxides containing strontium and ruthenium, oxides containing lanthanum and nickel The material is a conductive material that is resistant to oxidation or that maintains its conductivity even after absorbing oxygen. preferable.

[0474] By providing the conductor 242 so as to be in contact with the metal oxide 230, the conductivity of the metal oxide 230 The oxygen concentration may decrease near the metal oxide 242. In the vicinity of the conductor 242, the metal contained in the conductor 242 and the component of the metal oxide 230 are mixed. In such a case, a metal compound layer containing the metal oxide 230 may be formed. The carrier density increases in the region near 42, and this region becomes a low resistance region.

[0475] Here, the region between the conductor 242a and the conductor 242b overlaps the opening of the insulator 280. This allows the conductor 260 to be self-aligned between the conductors 242a and 242b. The components can be arranged in a coordinated manner.

[0476] The insulator 250 functions as a gate insulator. The insulator 250 is preferably made of silicon oxide, silicon oxynitride, or the like. silicon nitride oxide, silicon nitride, silicon oxide doped with fluorine, and carbon doped Silicon oxide, silicon oxide doped with carbon and nitrogen, and silicon oxide with vacancies In particular, silicon oxide and silicon oxynitride are stable to heat. preferable.

[0477] The insulator 250, like the insulator 224, has an impurity concentration of water or hydrogen in the insulator 250. The thickness of the insulator 250 is preferably 1 nm or more and 20 nm or less. It is preferable.

[0478] Furthermore, a metal oxide may be provided between the insulator 250 and the conductor 260. It is preferable that the insulating material 250 has a function of suppressing oxygen diffusion from the insulating material 250 to the conductor 260. This makes it possible to suppress oxidation of the conductor 260 due to oxygen contained in the insulator 250. can.

[0479] The metal oxide may also function as a part of the gate insulator. Therefore, when silicon oxide or silicon oxynitride is used for the insulator 250, the metal oxide It is preferable to use metal oxide, which is a high-k material with a high dielectric constant, for the gate. The insulator has a stacked structure of the insulator 250 and the metal oxide, 0A can be made into a transistor that is stable against heat and has a high dielectric constant. The gate potential applied during transistor operation is adjusted while maintaining the physical thickness of the gate insulator. In addition, it is possible to reduce the equivalent oxide thickness of the insulator that functions as the gate insulator. It is possible to reduce the EOT.

[0480] Specifically, hafnium, aluminum, gallium, yttrium, zirconium, and titanium and the like, selected from the group consisting of titanium, tantalum, nickel, germanium, magnesium, etc. Metal oxides containing one or more of these metals can be used. or hafnium oxide, which is an insulator containing one or both of the oxides of aluminum oxide, Hafnium or oxides containing aluminum and hafnium (hafnium aluminate) It is preferable to use the following.

[0481] Although the conductor 260 is shown as a two-layer structure in FIG. 48B, it may be a single-layer structure or a three-layer structure. The above laminated structure may also be used.

[0482] The conductor 260a is a hydrogen atom, a hydrogen molecule, a water molecule, a nitrogen atom, a nitrogen molecule, or a nitrogen oxide. Conductive material that suppresses the diffusion of impurities such as elementary molecules (N2O, NO, NO2, etc.) and copper atoms. It is preferable to use an electron or an electron-containing material such as oxygen (for example, oxygen atoms, oxygen molecules, etc.). It is preferable to use a conductive material that has the function of suppressing the diffusion of (i).

[0483] In addition, the conductor 260a has a function of suppressing the diffusion of oxygen, and thus the conductor 260a contained in the insulator 250 The conductor 260b is prevented from being oxidized by the oxygen contained therein, and the conductivity of the conductor 260b is prevented from decreasing. Examples of conductive materials that have the function of suppressing oxygen diffusion include tantalum and nitride. It is preferable to use tantalum chloride, ruthenium, ruthenium oxide, or the like.

[0484] The conductor 260b also functions as a wiring. For this reason, a conductor with high conductivity should be used. For example, a conductive material containing tungsten, copper, or aluminum as a main component is preferable. The conductor 260b may also have a laminated structure, for example, titanium or Alternatively, the conductive material may have a laminated structure of titanium nitride and the above conductive material.

[0485] Also, as shown in FIGS. 48A and 48C, if the metal oxide 230b overlaps with the conductor 242, In other words, in the channel forming region of the metal oxide 230, the metal oxide 2 The side surface of the first gate electrode 30 is covered with the conductor 260. The electric field of the conductor 260, which functions as a barrier, is easily applied to the side surface of the metal oxide 230. Therefore, the on-current of the transistor 200A is increased, and the periphery of the transistor 200A is The wave number characteristics can be improved.

[0486] The insulator 254, like the insulator 214, allows impurities such as water or hydrogen to pass through from the insulator 280 side. Therefore, it has a function as a barrier insulating film that prevents the metal oxide from being mixed into the transistor 200A. For example, it is preferable that the insulator 254 has a lower hydrogen permeability than the insulator 224. Furthermore, as shown in FIGS. 48B and 48C, the insulator 254 is made of a metal oxide 230. the side surface of the conductor 242c, the top and side surfaces of the conductor 242a, the top and side surfaces of the conductor 242b, and the metal oxide 23 230a, the side of the metal oxide 230b, and the region in contact with the top surface of the insulator 224. With this configuration, hydrogen contained in the insulator 280 is preferably 242a, conductor 242b, metal oxide 230a, metal oxide 230b, and insulator 22 4 from penetrating into the metal oxide 230 from the top or side surfaces thereof.

[0487] Additionally, the insulator 254 is resistant to the diffusion of oxygen (e.g., at least one of oxygen atoms, oxygen molecules, etc.). It is preferable that the insulator 2 has a function of suppressing the oxygen permeation (i.e., the oxygen is less likely to permeate). Preferably, 54 has a lower oxygen permeability than insulator 280 or insulator 224 .

[0488] The insulator 254 is preferably formed by sputtering. The insulator 224 is formed by sputtering in an atmosphere containing oxygen. Oxygen can be added to the area adjacent to the contact area with 254. Oxygen can be supplied to the metal oxide 230 through the insulator 224. 254 has the function of suppressing the upward diffusion of oxygen, so that oxygen is prevented from diffusing into the metal oxide 230 The insulator 222 can prevent oxygen from diffusing downward. By having the function of suppressing diffusion, oxygen is prevented from diffusing from the metal oxide 230 to the substrate side. In this way, oxygen is supplied to the channel forming region of the metal oxide 230. This reduces oxygen vacancies in the metal oxide 230, and the transistor becomes normally on. This can suppress the degradation.

[0489] The insulator 254 may be, for example, an oxide of one or both of aluminum and hafnium. It is preferable to form an insulator containing aluminum and / or hafnium oxide. Insulators containing aluminum oxide, hafnium oxide, or aluminum and hafnium It is preferable to use an oxide containing hafnium (hafnium aluminate) or the like.

[0490] The insulator 254 having a barrier property against hydrogen is used to separate the insulator 224, the insulator 250, and the By covering the metal oxide 230, the insulator 280 is insulated from the insulator 224 by the insulator 254, and the metal The oxide 230 and the insulator 250 separate the transistor 200A. Since impurities such as hydrogen can be prevented from entering from the outside, the power of the transistor 200A can be reduced. Therefore, the thermal characteristics and reliability can be improved.

[0491] The insulator 280 is formed by connecting the insulator 224, the metal oxide 230, and the conductor through the insulator 254. 242. For example, the insulator 280 may be silicon oxide or silicon oxynitride. , silicon oxide nitride, silicon oxide doped with fluorine, silicon oxide doped with carbon, carbon It is preferable to have silicon oxide to which hydrogen and nitrogen are added, or silicon oxide having vacancies. In particular, silicon oxide and silicon oxynitride are preferred because they are thermally stable. In addition, materials such as silicon oxide, silicon oxynitride, and silicon oxide with pores are subject to heating. This is preferable because it makes it easier to form a region containing more desorbed oxygen.

[0492] It is preferable that the concentration of impurities such as water or hydrogen in the insulator 280 is reduced. The top surface of the edge 280 may be flattened.

[0493] The insulator 274, like the insulator 214, prevents impurities such as water or hydrogen from being mixed into the insulator 280. It is preferable that the insulator 274 has a function as a barrier insulating film that prevents the insulator 274 from being damaged. For example, an insulator that can be used for the insulator 214, the insulator 254, etc. may be used. This can be done.

[0494] In addition, it is preferable to provide an insulator 281 that functions as an interlayer film on the insulator 274. The insulator 281, like the insulator 224, has a reduced concentration of impurities such as water or hydrogen in the film. It is preferable that

[0495] In addition, openings formed in the insulators 281, 274, 280, and 254 The conductor 240a and the conductor 240b are arranged on the are provided facing each other across the conductor 260. The height of the upper surface may be flush with the upper surface of the insulator 281 .

[0496] The insulators 281, 274, 280, and 254 are connected to the inner walls of the openings. An insulator 241a is provided, and the first conductor of the conductor 240a is formed in contact with the side surface of the insulator 241a. A conductor 242a is located at least partially on the bottom of the opening. The conductor 240a contacts the conductor 242a. Similarly, the insulator 281, the insulator 274, the insulator 280 and the insulator 254, an insulator 241b is provided in contact with the inner wall of the opening. The first conductor of the conductor 240b is formed in contact with the bottom of the opening. A conductor 242b is located in one portion, and the conductor 240b contacts the conductor 242b.

[0497] The conductor 240a and the conductor 240b are made of tungsten, copper, or aluminum as a main component. It is preferable to use a conductive material having a high insulating property. It may also have a layered structure.

[0498] When the conductor 240 has a laminated structure, the metal oxide 230a, the metal oxide 230b, Conductors in contact with the conductor 242, the insulator 254, the insulator 280, the insulator 274, and the insulator 281 The body is made of a conductor having the function of suppressing the diffusion of impurities such as water or hydrogen. For example, tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, or It is preferable to use ruthenium oxide or the like. In addition, it is preferable to use ruthenium oxide or the like to suppress the diffusion of impurities such as water or hydrogen. The conductive material having the function of forming the conductive layer may be used in a single layer or a multilayer structure. As a result, the oxygen added to the insulator 280 is absorbed by the conductors 240a and 240b. In addition, impurities such as water or hydrogen can be prevented from being generated from the upper layer of the insulator 281. is prevented from being mixed into the metal oxide 230 through the conductor 240a and the conductor 240b. can.

[0499] The insulators 241a and 241b can be used as the insulator 254, for example. The insulators 241a and 241b are in contact with the insulator 254. Therefore, impurities such as water or hydrogen from the insulator 280 and the like can be absorbed into the conductor 240a and the conductor The insulator 240b can prevent the metal oxide 230 from being mixed therein. 2. The oxygen contained in the conductive material 240a is prevented from being absorbed by the conductive material 240b. can be done.

[0500] Although not shown, the upper surface of the conductor 240a and the upper surface of the conductor 240b are in contact with each other and serve as wiring. Conductors that function as wiring may be arranged. Conductors that function as wiring may be made of tungsten, copper, or the like. It is preferable to use a conductive material containing aluminum as the main component. The body may be a laminated structure, for example, a laminate of titanium or titanium nitride and the above conductive material. The conductor may be formed so as to be embedded in an opening provided in the insulator. .

[0501] <Transistor configuration example 2> 49A to 49C show transistors that can be used in a display device according to one embodiment of the present invention. 1A and 1B are a top view and a cross-sectional view of a transistor 200B and the periphery of the transistor 200B. 200B is a variation of transistor 200A.

[0502] FIG. 49A is a top view of the transistor 200B. Also, FIGS. 49B and 49C are 49B is a cross-sectional view of a transistor 200B, where FIG. 49B is a cross-sectional view of a portion of B1-B2 in FIG. 49A. 1 is a cross-sectional view of the portion indicated by the dashed dotted line, and is also a cross-sectional view in the channel length direction of the transistor 200B. FIG. 49C is a cross-sectional view of the portion indicated by the dashed line B3-B4 in FIG. 49A. 49A is also a cross-sectional view of the transistor 200B in the channel width direction. 1, some elements are omitted for clarity of illustration.

[0503] In the transistor 200B, the conductor 242a and the conductor 242b are formed on the metal oxide 230c. , the insulator 250, and the conductor 260. The transistor 200B can be a transistor with a high on-state current. can be a transistor that is easy to control.

[0504] The conductor 260 functioning as the gate electrode is a conductor 260a and a conductor on the conductor 260a. The conductor 260a is a hydrogen atom, a hydrogen molecule, a water molecule, a copper atom, or the like. It is preferable to use a conductive material that has the function of suppressing the diffusion of impurities. For example, a conductive material having a function of suppressing the diffusion of at least one of oxygen atoms, oxygen molecules, etc. It is preferable to use a material.

[0505] The conductor 260a has a function of suppressing the diffusion of oxygen, and therefore the material of the conductor 260b In other words, by having the conductor 260a, the conductor 260 The oxidation of b is suppressed, and the decrease in electrical conductivity can be suppressed.

[0506] In addition, the upper surface and side surface of the conductor 260, the side surface of the insulator 250, and the side surface of the metal oxide 230c It is preferable to provide an insulator 254 so as to cover the surface. It is preferable to use an insulating material that has the function of suppressing the diffusion of impurities such as silicon and oxygen.

[0507] By providing the insulator 254, oxidation of the conductor 260 can be suppressed. By having the insulator 254, impurities such as water and hydrogen contained in the insulator 280 can be absorbed into the transistor 20. This can prevent diffusion to 0B.

[0508] <Transistor configuration example 3> 50A to 50C show transistors that can be used in a display device according to one embodiment of the present invention. 1A and 1B are a top view and a cross-sectional view of a transistor 200C and the periphery of the transistor 200C. 200C is a variation of transistor 200A.

[0509] FIG. 50A is a top view of the transistor 200C. Also, FIGS. 50B and 50C are 50B is a cross-sectional view of transistor 200C, where FIG. 50B is a cross-sectional view of one of C1-C2 in FIG. 50A. 1 is a cross-sectional view of the portion indicated by the dashed dotted line, and is also a cross-sectional view of the transistor 200C in the channel length direction. FIG. 50C is a cross-sectional view of the portion indicated by the dashed line C3-C4 in FIG. 50A. It is also a cross-sectional view of the transistor 200C in the channel width direction. 1, some elements are omitted for clarity of illustration.

[0510] The transistor 200C has an insulator 250 on the metal oxide 230c. The metal oxide 252 is provided thereon. The conductive material 260 is provided thereon. An insulator 270 is provided on the body 260. An insulator 271 is provided on the insulator 270.

[0511] The metal oxide 252 preferably has a function of suppressing oxygen diffusion. By providing a metal oxide 252 that suppresses the diffusion of oxygen between the conductor 260 and the conductive material, The diffusion of oxygen into the metal oxide 260 is suppressed. In other words, the amount of oxygen supplied to the metal oxide 230 is reduced. In addition, oxidation of the conductor 260 can be suppressed.

[0512] The metal oxide 252 may function as a part of the gate electrode. The oxide semiconductor that can be used as the metal oxide 230 is used as the metal oxide 252. In this case, the conductor 260 is formed by sputtering, and the metal oxide The electrical resistance of the oxide 252 can be reduced to make it a conductor. The electrode can be called a Conductor.

[0513] The metal oxide 252 may also function as part of the gate insulator. Therefore, the insulator 250 is preferably made of a material with high thermal stability, such as silicon oxide or silicon oxynitride. When using a metal oxide 252, a metal oxide that is a high-k material with a high dielectric constant is used. By using such a layered structure, the transistor 200C can be made resistant to heat. Therefore, the transistor can be made stable against the physical film and have a high relative dielectric constant. This makes it possible to reduce the gate potential applied during transistor operation while maintaining the thickness. In addition, it is possible to reduce the equivalent oxide thickness (EOT) of the insulator that functions as the gate insulator. .

[0514] In the transistor 200C, the metal oxide 252 is shown as a single layer, but may have a stacked structure of two or more layers. For example, a metal oxide that functions as part of the gate electrode and a gate insulator Alternatively, a metal oxide that functions as a part of the insulating layer may be laminated.

[0515] The transistor 200C includes a metal oxide 252, which acts as a gate electrode. When it acts as a pole, it does not weaken the influence of the electric field from the conductor 260. The metal oxide 252 can improve the on-state current of the gate insulating film 200C. When acting as a conductive material, the physical thickness of the insulator 250 and the metal oxide 252 The distance between the conductor 260 and the metal oxide 230 can be maintained. Therefore, the leakage current between the transistor 60 and the metal oxide 230 can be suppressed. The transistor 200C has a laminated structure of the insulator 250 and the metal oxide 252, and thus has a conductive The physical distance between the conductor 260 and the metal oxide 230 and the distance between the conductor 260 and the metal oxide 230 The electric field strength applied to 30 can be easily adjusted.

[0516] Specifically, the metal oxide 252 may be an oxide semiconductor that can be used for the metal oxide 230. Conductors with low resistance can be used. Alternatively, hafnium, aluminum, gallium Sm, yttrium, zirconium, tungsten, titanium, tantalum, nickel, gel A metal oxide containing one or more metals selected from the group consisting of ammonium, magnesium, etc. It can be used.

[0517] In particular, oxides are insulators containing oxides of either or both of aluminum and hafnium. Aluminum, hafnium oxide, oxides containing aluminum and hafnium (hafnium It is preferable to use hafnium aluminate, etc. In particular, hafnium oxide is preferable. It has higher heat resistance than aluminum. Therefore, it is less likely to crystallize during heat treatment in the subsequent process. It is preferable for this reason. However, the metal oxide 252 is not an essential component. The design can be adjusted depending on the requirements.

[0518] The insulator 270 has an insulating property that prevents impurities such as water or hydrogen from permeating, and oxygen from permeating. For example, aluminum oxide or hafnium oxide is preferably used. This prevents the conductor 260 from being oxidized by oxygen from above the insulator 270. Furthermore, impurities such as water or hydrogen can be prevented from flowing into the conductor 2 from above the insulator 270. 60 and the insulator 250, it is possible to prevent the metal oxide 230 from being mixed therewith.

[0519] The insulator 271 functions as a hard mask. When processing 0, the side of the conductor 260 is approximately vertical, specifically, the side of the conductor 260 and the substrate The angle formed by the surfaces is between 75 degrees and 100 degrees, preferably between 80 degrees and 95 degrees. can be done.

[0520] The insulator 271 has a function of suppressing the permeation of impurities such as water or hydrogen, and oxygen. By using an insulating material, the insulating layer may also function as a barrier layer. The body 270 may not be provided.

[0521] The insulator 271 is used as a hard mask to form the insulator 270, the conductor 260, and the metal oxide 2 52, insulator 250, and metal oxide 230c are selectively removed to remove these The side surfaces of the metal oxide 230b can be made to be substantially flush with each other, and a part of the surface of the metal oxide 230b can be exposed. .

[0522] Also, transistor 200C has region 243a on a portion of the exposed metal oxide 230b surface. and region 243b. Either region 243a or region 243b functions as a source region. The other of the region 243a and the region 243b functions as a drain region.

[0523] The regions 243a and 243b may be formed by, for example, an ion implantation method, an ion doping method, or the like. Plasma immersion ion implantation or plasma treatment can be used to remove exposed metal oxide. This can be achieved by introducing impurity elements such as phosphorus or boron into the surface of 230b. In the embodiments, the term "impurity elements" refers to elements other than the main component elements.

[0524] In addition, after exposing a part of the surface of the metal oxide 230b, a metal film is formed, and then a heat treatment is performed. By performing the above, the elements contained in the metal film are diffused into the metal oxide 230b, and the region 2 43a and region 243b can also be formed.

[0525] The region of the metal oxide 230b into which the impurity element is introduced has a reduced electrical resistivity. The regions 243a and 243b may be referred to as "impurity regions" or "low resistance regions." .

[0526] By using the insulator 271 and / or the conductor 260 as a mask, the region 243a and the region The region 243b can be formed in a self-aligned manner. 243a and / or region 243b do not overlap with the conductor 260, reducing parasitic capacitance. In addition, the channel forming region and the source / drain region (region 243a or region 243 No offset region is formed between the regions 243a and 243b. By forming it in a self-aligned manner, the on-current is increased, the threshold voltage is reduced, It is possible to improve the operating frequency, etc.

[0527] The transistor 200C includes an insulator 271, an insulator 270, a conductor 260, a metal oxide 25 2, the insulator 250, and the insulator 272 on the side of the metal oxide 230c. 2 is preferably an insulator with a low relative dielectric constant. For example, silicon oxide, silicon oxynitride, etc. Silicon, silicon oxide nitride, silicon nitride, silicon oxide doped with fluorine, carbon doped silicon oxide doped with carbon and nitrogen, silicon oxide with vacancies, It is preferable that the material is a resin or the like. In particular, silicon oxide, silicon oxynitride, silicon nitride oxide, When silicon dioxide having pores is used as the insulator 272, the insulator 272 can be formed in a later process. In addition, silicon oxide and silicon oxynitride are preferable because they can easily form an excess oxygen region in the silicon dioxide. Silicon is preferred because it is thermally stable. Insulator 272 also has the function of diffusing oxygen. It is preferred that the compound has the following structure:

[0528] In order to further reduce the off-state current, an off-state current is formed between the channel forming region and the source / drain region. An offset region is a region with high electrical resistivity, and The offset region is a region where the impurity element is not introduced. This can be achieved by introducing the impurity element described above after the formation. In this case, the insulator 272 It functions as a mask in the same way as the insulator 271. Impurity elements are not introduced into the region overlapping with the insulator 272, and the electrical resistivity of this region remains high. It can be said that:

[0529] The transistor 200C also has an insulator 272 and an insulator 254 on the metal oxide 230. The insulator 254 is preferably formed by sputtering. By using the coating method, it is possible to form an insulator film with little impurities such as water or hydrogen. do.

[0530] The oxide film formed by sputtering removes hydrogen from the structure on which the film is to be formed. Therefore, when the insulator 254 is formed by sputtering, the insulator 2 54 absorbs hydrogen and water from the metal oxide 230 and the insulator 272. The hydrogen concentration in the oxide 230 and the insulator 272 can be reduced.

[0531] <Transistor constituent materials> The constituent materials that can be used for the transistor will be described.

[0532] <<Substrate>> A substrate forming the transistor 200A, the transistor 200B, or the transistor 200C The plate may be, for example, an insulating substrate, a semiconductor substrate, or a conductive substrate. The substrate may be, for example, a glass substrate, a quartz substrate, a sapphire substrate, or a stabilized zirconia substrate. (yttria-stabilized zirconia substrate, etc.), resin substrate, etc. For example, a semiconductor substrate such as silicon or germanium, or silicon carbide or silicon germanium A compound semiconductor consisting of indium, gallium arsenide, indium phosphide, zinc oxide, and gallium oxide. Furthermore, there are semiconductor substrates having an insulating region inside the semiconductor substrate, e.g. For example, there is a SOI (Silicon On Insulator) substrate. Examples of substrates include graphite substrates, metal substrates, alloy substrates, conductive resin substrates, etc. There are also substrates with metal oxides, etc. Furthermore, there are substrates with conductors or The term "substrate" refers to a substrate on which a semiconductor is provided, a substrate on which a conductor or an insulator is provided on a semiconductor substrate, a conductive substrate, or a There are substrates in which semiconductors or insulators are provided on a plate, or elements are provided on these substrates. The elements provided on the substrate may include a capacitance element, a resistance element, a switch, and the like. There are elements, memory elements, etc.

[0533] <<Insulators>> The insulators include oxides, nitrides, oxynitrides, nitride oxides, and metal oxides that have insulating properties. , metal oxide nitride, metal nitride oxide, etc.

[0534] For example, as transistors become smaller and more highly integrated, the gate insulator becomes thinner, Problems such as leakage current may occur. By using -k materials, it is possible to reduce the voltage required for transistor operation while maintaining the physical film thickness. On the other hand, by using a material with a low relative dielectric constant for the insulator that functions as an interlayer film, It is possible to reduce the parasitic capacitance between the wires. Therefore, the material is selected according to the function of the insulator. It is recommended to select:

[0535] Insulators with high dielectric constants include gallium oxide, hafnium oxide, zirconium oxide, and aluminum. Oxides containing aluminum and hafnium, oxynitrides containing aluminum and hafnium oxides containing silicon and hafnium, and oxynitrides containing silicon and hafnium hafnium nitrides, or silicon and hafnium nitrides.

[0536] Insulators with low dielectric constants include silicon oxide, silicon oxynitride, and silicon nitride oxide. silicon nitride, silicon oxide with fluorine, silicon oxide with carbon, Examples of the material include silicon oxide to which hydrogen and nitrogen are added, silicon oxide having pores, and resin.

[0537] In addition, a transistor including an oxide semiconductor can suppress permeation of impurities such as hydrogen and oxygen. Functional insulators (insulators 214, 222, 254, and 274, etc.) By surrounding the transistor with a metal oxide, the electrical characteristics of the transistor can be stabilized. Examples of insulators that have the function of suppressing the permeation of pure substances and oxygen include boron, carbon, and nitrogen. Nitrogen, oxygen, fluorine, magnesium, aluminum, silicon, phosphorus, chlorine, argon, gas Sodium, Germanium, Yttrium, Zirconium, Lanthanum, Neodymium, Hafnium An insulator containing hydrogen or tantalum may be used in a single layer or a stacked layer. As an insulator that has the function of suppressing the permeation of impurities and oxygen, aluminum oxide, Magnesium oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide metal oxides such as tantalum oxide, lanthanum oxide, neodymium oxide, hafnium oxide, or tantalum oxide; Aluminum nitride, aluminum titanium nitride, titanium nitride, silicon oxynitride, or nitride Metal nitrides such as silicon nitride can be used.

[0538] The insulator that functions as the gate insulator has a region containing oxygen that is desorbed by heating. For example, an insulator having a region containing oxygen that is desorbed by heating is preferable. By forming a structure in which silicon nitride or silicon oxynitride is in contact with the metal oxide 230, The oxygen deficiency of the oxide 230 can be compensated for.

[0539] <<Conductors>> Conductors include aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, and titanium. Niobium, molybdenum, tungsten, hafnium, vanadium, niobium, manganese, magnesium Sodium, zirconium, beryllium, indium, ruthenium, iridium, strontium A metal element selected from the group consisting of ruthenium, lanthanum, etc., or an alloy containing the above-mentioned metal element, or It is preferable to use an alloy or the like that combines metal elements such as tantalum nitride, nitride, etc. titanium dioxide, tungsten, nitrides containing titanium and aluminum, tantalum and aluminum Nitrides containing strontium, ruthenium oxide, ruthenium nitride, and oxides containing strontium and ruthenium It is preferable to use tantalum nitride, lanthanum nitride, or oxide containing lanthanum and nickel. , titanium nitride, nitride containing titanium and aluminum, nitride containing tantalum and aluminum Ruthenium oxide, ruthenium nitride, oxides containing strontium and ruthenium, lanthanum Oxides containing tungsten and nickel are conductive materials that are resistant to oxidation, or that absorb oxygen but remain conductive. It is also preferable to use polycrystalline silicon containing impurity elements such as phosphorus. The material uses semiconductors with high electrical conductivity, such as nickel silicide, That's fine.

[0540] Furthermore, a plurality of conductors made of the above materials may be stacked. Alternatively, a laminated structure may be used in which a material containing a metal element and a conductive material containing oxygen are combined. In addition, a laminated structure combining a material containing the above-mentioned metal element and a conductive material containing nitrogen is also available. Also, the material containing the metal element, the conductive material containing oxygen, and the nitrogen A laminated structure in which a conductive material containing the above is combined may also be used.

[0541] When a metal oxide is used for the channel formation region of a transistor, The conductors that function as the above include materials containing the metal elements, conductive materials containing oxygen, and In this case, it is preferable to use a laminated structure in which the conductive material containing oxygen is It is preferable to provide the conductive material containing oxygen on the channel forming region side. By doing so, oxygen released from the conductive material is more easily supplied to the channel formation region.

[0542] In particular, the metal oxide in which the channel is formed is used as a conductor that functions as a gate electrode. It is preferable to use a conductive material containing the metal element and oxygen. Conductive materials containing silicon and nitrogen may also be used. For example, titanium nitride, tantalum nitride, and other nitride-containing materials may be used. Conductive materials containing indium tin oxide and tungsten oxide may also be used. Indium oxide containing tungsten oxide, indium zinc oxide containing titanium oxide Indium oxide, indium tin oxide with titanium oxide, indium zinc oxide, silicon Indium tin oxide doped with silicon may also be used. By using such a material, the metal in which the channel is formed can be easily removed. It may be possible to capture hydrogen contained in metal oxides, or to separate it from the outer insulator. In some cases, it may be possible to capture contaminating hydrogen.

[0543] <<Metal oxides>> The metal oxide preferably contains at least indium or zinc. and zinc. In addition to these, aluminum, gallium, yttrium, It is preferable that thorium, tin, etc. are contained. Also, boron, titanium, iron, nickel, etc. Ru, Germanium, Zirconium, Molybdenum, Lanthanum, Cerium, Neodymium, Hafnium Contains one or more selected from the group consisting of aluminum, tantalum, tungsten, and magnesium. It may be included.

[0544] Here, the metal oxide is an In-M-Zn oxide having indium, element M, and zinc. Here, the element M is aluminum, gallium, yttrium, or tin. Other elements that can be used for element M include boron, titanium, iron, and nickel. , germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium However, the element M is not the same as the element mentioned above. There are cases where it is acceptable to combine multiple elements.

[0545] In this specification and the like, metal oxides containing nitrogen are also referred to as metal oxides. Nitrogen-containing metal oxides are also called metal oxynitrides (met). It may also be called hydroxybenzoxanthate (hydroxybenzoxanthate).

[0546] [Metal oxide structures] Oxide semiconductors (metal oxides) are divided into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include CAAC-OS and polycrystalline Oxide semiconductor, nc-OS (nanocrystalline oxide semiconductor) conductor), pseudo-amorphous oxide semiconductor (a-like OS) -like oxide semiconductor), and amorphous oxide semiconductor, etc. There is.

[0547] [impurities] The effect of each impurity in metal oxides is explained below. If alkaline earth metals are included, defect levels may be formed and carriers may be generated. Therefore, metal oxides containing alkali metals or alkaline earth metals are used to form channels. The transistors used in the metal oxide region tend to be normally on. It is preferable to reduce the concentration of alkali metals or alkaline earth metals. Secondary Ion Mass Spectroscopy (SIMS) Concentration of alkali metals or alkaline earth metals in metal oxides obtained by NMR , 1×10 18 atoms / cm 3 Less than or equal to 2 x 10 16 atoms / cm 3 Do the following:

[0548] In addition, the hydrogen contained in the metal oxide reacts with the oxygen that bonds with the metal atom to form water. Therefore, oxygen vacancies may be formed in the metal oxide due to the hydrogen contained in the metal oxide. When hydrogen enters the oxygen vacancy, electrons, which act as carriers, may be generated. In addition, some of the hydrogen bonds with oxygen, which bonds with metal atoms, to generate electrons, which act as carriers. Therefore, transistors using metal oxides containing hydrogen can be It is likely to have the Marion trait.

[0549] For this reason, it is preferable that the amount of hydrogen in the metal oxide is reduced as much as possible. In the metal oxide, the hydrogen concentration obtained by SIMS is 1×10 20 atoms / cm 3 Less than 1 x 10 19 atoms / cm 3 less than 5 × 10 18 atoms / cm 3 less than 1×10 18 atoms / cm 3 Less than and A metal oxide with sufficiently reduced impurities is used for the channel formation region of a transistor. This allows the transistor to have stable electrical characteristics.

[0550] It is preferable to use a thin film with high crystallinity as the metal oxide used as the semiconductor of a transistor. The use of this thin film can improve the stability or reliability of the transistor. The thin film can be, for example, a thin film of a single crystal metal oxide or a thin film of a polycrystalline metal oxide. However, thin films of single crystal metal oxides or thin films of polycrystalline metal oxides are Formation on a substrate requires high temperature or laser heating processes. This increases the cost of the system and also reduces the throughput.

[0551] The configuration examples exemplified in this embodiment and the corresponding drawings etc. are at least partially It can be implemented in appropriate combination with other configuration examples or drawings, etc.

[0552] This embodiment may be appropriately combined with at least a part of another embodiment described in this specification. It can be implemented in combination.

[0553] (Embodiment 3) In this embodiment, the semiconductor device can be used for the OS transistor described in the above embodiment. Metal oxides (hereinafter also referred to as oxide semiconductors) will be described.

[0554] <Classification of crystal structures> First, classification of crystal structures in oxide semiconductors will be described with reference to FIG. 51A. FIG. 51A shows an oxide semiconductor, typically IGZO (a metal containing In, Ga, and Zn). FIG. 1 is a diagram illustrating the classification of crystal structures of metals (oxides).

[0555] As shown in FIG. 51A, oxide semiconductors are broadly divided into "amorphous" and ", "Crystalline" and "Crystal" Also, "Amorphous" includes completely amorp Also, "Crystalline" includes CAAC (c-ax is-aligned crystalline), nc(nanocrystalli ne), and cloud-aligned composite (CAC). The classification of "Crystalline" includes single crystal, pol Crystalline and completely amorphous materials are excluded. "Crystal" includes single crystal and poly crystal. Contains stal.

[0556] The structures within the bold frame in Figure 51A are classified into "Amorphous" and "Cry It is an intermediate state between "crystal" and "new crystal" This structure belongs to the line phase. It is completely different from the stable "Amorphous" and "Crystal" This can be rephrased as a structure.

[0557] The crystal structure of the film or substrate can be determined by X-ray diffraction (XRD). n) It can be evaluated using the spectrum. GIXD (Grazing-Incidence X) of CAAC-IGZO films The XRD spectrum obtained by the GIXD measurement is shown in Figure 51B. It is also called the Seemann-Bohlin method. The XRD spectrum obtained is simply referred to as the XRD spectrum. The composition of the C-IGZO film is approximately In:Ga:Zn=4:2:3 [atomic ratio]. The thickness of the CAAC-IGZO film shown in FIG. 51B is 500 nm.

[0558] As shown in Figure 51B, the XRD spectrum of the CAAC-IGZO film shows clear crystallinity. Specifically, the XRD spectrum of the CAAC-IGZO film shows the following peaks: A peak indicating the c-axis orientation is detected near 2θ=31°. The peak intensity around 2θ=31° is the angle at which the peak intensity was detected. It is asymmetrical about the axis.

[0559] The crystal structure of the film or substrate was analyzed by nanobeam electron diffraction (NBED). Diffraction patterns observed by electron diffraction (ultramicroelectron The diffraction pattern of the CAAC-IGZO film can be evaluated by the diffraction pattern. The turn is shown in Figure 51C. Figure 51C shows the NBED in which the electron beam is incident parallel to the substrate. The diffraction pattern observed by the CAAC-IGZO film shown in Figure 51C is The composition is approximately In:Ga:Zn=4:2:3 [atomic ratio]. In this method, electron diffraction is performed using a probe diameter of 1 nm.

[0560] As shown in Figure 51C, the diffraction pattern of the CAAC-IGZO film shows multiple c-axis orientations. spots are observed.

[0561] <<Structure of oxide semiconductor>> When focusing on the crystal structure, oxide semiconductors may be classified differently from those shown in FIG. 51A. For example, oxide semiconductors are classified into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the above-mentioned CAAC-OS and Non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors and pseudo-non-crystalline oxide semiconductors. amorphous-like oxide semiconductor (a-like OS) semiconductor), amorphous oxide semiconductor, etc.

[0562] Here, for details of the above-mentioned CAAC-OS, nc-OS, and a-like OS, Give an explanation.

[0563] [CAAC-OS] The CAAC-OS has multiple crystalline regions, each of which has its c-axis aligned in a specific direction. The specific direction is the thickness direction of the CAAC-OS film. The normal direction of the surface on which the CAAC-OS film is formed or the normal direction of the surface of the CAAC-OS film. The crystalline region is a region in which the atomic arrangement has periodicity. When viewed as a row, the crystalline region is also a region with a uniform lattice arrangement. The crystal structure has a region where a plurality of crystal regions are connected in the ab-plane direction, and the region has distortion. The distortion is a result of the lattice alignment being disrupted in the area where multiple crystal regions are connected. The area where the orientation of the lattice arrangement changes between the area where the lattice arrangement is the same and the area where the lattice arrangement is the same is called the area where the orientation of the lattice arrangement changes. In other words, the CAAC-OS has a c-axis orientation and a clear orientation in the ab-plane direction. It is an oxide semiconductor that does not have a

[0564] Each of the plurality of crystalline regions is made up of one or more minute crystals (maximum diameter 10 nm). If a crystalline region is made up of a single microcrystal, then The maximum diameter of the crystalline region is less than 10 nm. When the crystals are crystalline, the size of the crystalline regions may be on the order of several tens of nanometers.

[0565] In-M-Zn oxide (where element M is aluminum, gallium, yttrium, or tin) , titanium, etc.), CAAC-OS is indium ( a layer containing element M, zinc (Zn), and oxygen (hereinafter referred to as the In layer); The layered crystal structure (also called layered structure) is made up of a layer (hereinafter referred to as the (M, Zn) layer) and a layer (hereinafter referred to as the (M, Zn) layer) that corresponds to the M, Zn. Indium and element M are mutually substitutable. The Zn layer may contain indium. The In layer may contain the element M. In some cases, the In layer may contain Zn. In high-resolution TEM images, this is observed as a lattice pattern.

[0566] For example, when the structure of the CAAC-OS film is analyzed using an XRD device, the θ / 2θ shift In the out-of-plane XRD measurement using a tuner, the peak indicating the c-axis orientation was = 31° or in the vicinity. The position of the peak indicating the c-axis orientation (value of 2θ) is However, this may vary depending on the type and composition of the metal elements that make up the CAAC-OS.

[0567] In addition, for example, in the electron diffraction pattern of the CAAC-OS film, multiple bright spots (spots) ) is observed. Note that one spot and another spot are the result of the incident electron beam passing through the sample. The spot (also called the direct spot) is the center of symmetry, and the observed positions are point-symmetric. do.

[0568] When the crystalline region is observed from the specific direction, the lattice arrangement within the crystalline region is a hexagonal lattice. The unit cell is not necessarily a regular hexagon, but may be a non-regular hexagon. The above distortion may have a lattice arrangement such as a pentagon or heptagon. In S, clear grain boundaries are observed even near the strain. In other words, the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This is because the arrangement of oxygen atoms in the CAAC-OS is not dense in the ab-plane direction. The metal atoms are replaced by other atoms, which causes the bond distance between the atoms to change. This is thought to be because it can tolerate

[0569] The crystal structure in which clear grain boundaries are observed is called polycrystalline. The grain boundaries act as recombination centers, trapping carriers and forming transistor on-states. It is highly likely that this will cause a decrease in the on-state current and a decrease in the field effect mobility. CAAC-OS, which has no visible grain boundaries, has a crystal structure suitable for use in semiconductor layers of transistors. It is one of the crystalline oxides. For example, In-Zn oxide and In-Ga-Zn oxide are preferable. This is more preferable than the above because it can suppress the occurrence of grain boundaries.

[0570] The CAAC-OS is an oxide semiconductor with high crystallinity and no clear grain boundaries. Therefore, it can be said that the CAAC-OS is less susceptible to the decrease in electron mobility caused by the grain boundaries. In addition, the crystallinity of an oxide semiconductor may be reduced due to the inclusion of impurities, the generation of defects, etc. Therefore, CAAC-OS can be considered an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Therefore, the physical properties of an oxide semiconductor having a CAAC-OS are stable. The oxide semiconductor containing CAAC-OS is heat-resistant and highly reliable. S is stable even under high temperatures (so-called thermal budget) in the manufacturing process. Therefore, using CAAC-OS for OS transistors can increase the flexibility of the manufacturing process. This makes it possible to:

[0571] [nc-OS] nc-OS is a material that can be used in microscopic areas (e.g., areas between 1 nm and 10 nm, especially areas between 1 nm and 3 nm). In other words, nc-OS has a periodic atomic arrangement in the region of microscopic The size of the minute crystals is, for example, 1 nm or more and 10 nm or less. In particular, since the size of these tiny crystals is between 1 nm and 3 nm, they are also called nanocrystals. In nc-OS, there is no regularity in the crystal orientation between different nanocrystals. Therefore, depending on the analytical method, nc-OS may be classified as a-like In some cases, it is difficult to distinguish between an OS and an amorphous oxide semiconductor. For example, in the case of an nc-OS film, Structural analysis was performed using an XRD device. Out-of-place analysis using θ / 2θ scan In the XRD measurement, no peaks indicating crystallinity were detected. Electron diffraction using an electron beam with a probe diameter larger than that of nanocrystals (e.g., 50 nm or larger) When performing selected area electron diffraction (also known as selected area electron diffraction), a halo-like diffraction pattern is observed. On the other hand, for the nc-OS film, particles with sizes close to or smaller than the nanocrystals were observed. Electron beam diffraction (nanobeam electron diffraction) using an electron beam with a lobe diameter (for example, 1 nm to 30 nm) When direct beam diffraction is performed, multiple beams are generated within a ring-shaped area centered on the direct spot. An electron diffraction pattern may be obtained in which several spots are observed.

[0572] [a-like OS] The a-like OS is an oxide semiconductor with a structure between the nc-OS and amorphous oxide semiconductor. Conductive. A-like OS has voids or low density regions. The OS has lower crystallinity than the nc-OS and CAAC-OS. The OS has a higher hydrogen concentration in the film than the nc-OS and CAAC-OS.

[0573] <<Oxide semiconductor structure>> Next, the details of the CAC-OS will be explained. Regarding.

[0574] [CAC-OS] CAC-OS is, for example, a metal oxide in which the elements constituting the metal oxide are 0.5 nm or more and 10 nm or less. Preferably, it is a composition of a material unevenly distributed in a size of 1 nm or more and 3 nm or less, or in the vicinity thereof. In the following, it is assumed that one or more metal elements are unevenly distributed in a metal oxide, and the metal The region having the element has a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less. A state in which the pixels are mixed at a size equal to or close to the size is called a mosaic or patch state.

[0575] Furthermore, CAC-OS is a mosaic structure in which the material is separated into a first region and a second region. The first region is in a cloud-like shape, and the first region is distributed throughout the film (hereinafter also referred to as a cloud-like shape). In other words, the CAC-OS is a mixture of the first and second regions. It is a composite metal oxide having the following structure.

[0576] Here, the ratio of In to the metal elements constituting the CAC-OS in the In-Ga-Zn oxide is The atomic ratios of In, Ga, and Zn are expressed as [In], [Ga], and [Zn], respectively. For example, in the CAC-OS of In-Ga-Zn oxide, the first region is In] is larger than [In] in the composition of the CAC-OS film. The region where [Ga] is larger than [Ga] in the composition of the CAC-OS film. Or, for example, the first region has a larger [In] than the second region. and [Ga] is smaller than [Ga] in the second region. In the second region, [Ga] is larger than [Ga] in the first region, and [In] is This region is smaller than [In] in the first region.

[0577] Specifically, the first region is mainly composed of indium oxide, indium zinc oxide, etc. The second region is mainly made of gallium oxide, gallium zinc oxide, etc. In other words, the first region can be rephrased as a region in which In is the main component. The second region can be rephrased as a region containing Ga as the main component. can.

[0578] It should be noted that there are cases where a clear boundary between the first region and the second region cannot be observed.

[0579] For example, in the case of CAC-OS, an In-Ga-Zn oxide, energy dispersive X-ray spectroscopy Law(EDX:Energy Dispersive X-ray spectrosco The EDX mapping obtained using the py) identified the region containing In as the main component (first region ) and a region (second region) mainly composed of Ga are unevenly distributed and mixed. It can be confirmed that:

[0580] When CAC-OS is used in a transistor, the conductivity due to the first region and the conductivity due to the second region are The insulating properties caused by the above work complementary to each other, resulting in a switching function (On / Off). In other words, CAC-OS is , a part of the material has a conductive function and a part of the material has an insulating function, and the whole of the material has a The material functions as a semiconductor. By separating the conductive function from the insulating function, Therefore, when using CAC-OS in transistors, This allows for a high on-state current (I on ), high field-effect mobility (μ), and good switching The operation can be realized.

[0581] Oxide semiconductors have a variety of structures, each of which has different characteristics. Oxide semiconductors include amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, and CA Two or more of C-OS, nc-OS, and CAAC-OS may be included.

[0582] <Transistors containing oxide semiconductors> Next, a case where the oxide semiconductor is used in a transistor will be described.

[0583] By using the oxide semiconductor in a transistor, a transistor with high field-effect mobility can be realized. Furthermore, a highly reliable transistor can be realized.

[0584] It is preferable to use an oxide semiconductor with a low carrier concentration for the transistor. The carrier concentration of oxide semiconductors is 1×10 17 cm -3 Less than 1 × 10 15 cm -3 or less, more preferably 1 × 10 13 cm -3 Less than 1×10, more preferably 11 c m -3or less, more preferably 1 × 10 10 cm -3 Less than 1 x 10 -9 cm -3 In addition, when the carrier concentration of the oxide semiconductor film is reduced, the oxide semiconductor This can be achieved by lowering the impurity concentration in the conductor film and lowering the defect level density. A low impurity concentration and a low defect level density are called high purity intrinsic or substantially high purity intrinsic. Note that the oxide semiconductor having a low carrier concentration may be a highly purified intrinsic or substantially highly purified intrinsic oxide. They are sometimes called semiconductors.

[0585] Furthermore, a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has a low density of defect states. Therefore, the trap level density may also be low.

[0586] In addition, it takes a long time for the charges trapped in the trap levels of the oxide semiconductor to disappear. Therefore, the trap level density is high. A transistor in which a channel formation region is formed in an oxide semiconductor has unstable electrical characteristics. There are cases where this happens.

[0587] Therefore, in order to stabilize the electrical characteristics of a transistor, the impurity concentration in the oxide semiconductor is In order to reduce the impurity concentration in the oxide semiconductor, It is also preferable to reduce the impurity concentration in the film in contact with the film. Potassium metal, alkaline earth metal, iron, nickel, silicon, etc.

[0588] <Impurities> Here, the influence of each impurity in an oxide semiconductor will be described.

[0589] When oxide semiconductors contain silicon or carbon, which are elements of Group 14, oxide Defect levels are formed in semiconductors. This causes defects in silicon and carbon in oxide semiconductors. The concentration of silicon and carbon near the interface with the oxide semiconductor (Secondary Ion Mass Spectroscopy ( SIMS (Secondary Ion Mass Spectrometry) The resulting concentration is 2 x 10 18 atoms / cm 3 Less than or equal to 2 x 10 17 at oms / cm 3 The following applies.

[0590] In addition, when an alkali metal or an alkaline earth metal is contained in an oxide semiconductor, a defect level is formed. Therefore, alkali metals or alkaline earth metals are not included. A transistor using an oxide semiconductor that has been used in the past tends to be normally on. Therefore, the concentration of alkali metals or alkaline earth metals in the oxide semiconductor obtained by SIMS , 1×10 18 atoms / cm 3 Less than or equal to 2 x 10 16 atoms / cm 3 Do the following:

[0591] In addition, when nitrogen is contained in an oxide semiconductor, electrons that act as carriers are generated, and the carriers As a result, the concentration of nitrogen in the oxide semiconductor increases, making it easier to convert it into an n-type semiconductor. A transistor using such a gate insulating film tends to be normally on. When nitrogen is contained, trap levels may be formed, which may result in a decrease in the transistor voltage. Therefore, the thermal properties of the oxide semiconductor obtained by SIMS may become unstable. Nitrogen concentration is 5 x 1019 atoms / cm 3 Less than 5 x 10 18 atoms / cm 3 Less than 1×10, more preferably 18 atoms / cm 3 More preferably, 5×10 17 atoms / cm 3 Do the following:

[0592] In addition, hydrogen contained in oxide semiconductors reacts with oxygen that bonds with metal atoms to form water. When hydrogen enters the oxygen vacancy, the electrons acting as carriers are released. In addition, some of the hydrogen may combine with the oxygen that is bonded to the metal atom, forming a carrier. Therefore, it is necessary to use an oxide semiconductor containing hydrogen. Therefore, hydrogen in the oxide semiconductor It is preferable that the SIM is reduced as much as possible. The hydrogen concentration obtained by S is 1×10 20 atoms / cm 3 Less than 1x1 0 19 atoms / cm 3 less than 5 × 10 18 atoms / cm 3 less than, More preferably, 1 × 10 18 atoms / cm 3 Make it less than.

[0593] To use an oxide semiconductor in which impurities are sufficiently reduced for a channel formation region of a transistor This allows stable electrical properties to be imparted.

[0594] This embodiment may be appropriately combined with at least a part of another embodiment described in this specification. It can be implemented in combination.

[0595] (Fourth embodiment) In this embodiment, an electronic device including a display device according to one embodiment of the present invention will be described.

[0596] 52A to 52G show examples of electronic devices including a display device according to one embodiment of the present invention. The electronic device shown in FIGS. 52A to 52G includes a housing 9000, a display unit 9001, a screen Speaker 9003, operation keys 9005 (including a power switch or an operation switch), connection terminal Child 9006, sensor 9007 (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, Light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, (including functions to measure flow rate, humidity, gradient, vibration, odor, or infrared rays), It has the Von 9008, etc.

[0597] The electronic devices shown in Figures 52A to 52G have various functions. Functions for displaying still images, videos, text images, etc. on the display, touch panel function, calendar , date, or time display function, processing by various software (programs) Control function, wireless communication function, and wireless communication function are used to connect to various computer networks. Connection function, function to send or receive various data using wireless communication function, recording medium It has the function of reading out the programs or data recorded in the and displaying them on the display unit, etc. The functions that the electronic devices shown in FIGS. 52A to 52G can have are as follows: The present invention is not limited to these, and various functions can be provided. Although not shown, the electronic device may have a configuration having a plurality of display units. Equipping electronic devices with cameras, etc., functions for taking still images, taking videos, and recording the images to a recording medium (external or built-in to the camera), and the captured image is displayed on the display. It may have functions, etc.

[0598] The electronic devices shown in FIGS. 52A to 52G will be described in detail below.

[0599] 52A is a perspective view showing a television device 9100. The display 9001 has a large screen, for example, 50 inches or more, or 100 inches or more. It is possible to do this.

[0600] The display device of one embodiment of the present invention is applied to a display portion 9001 of a television set 9100. This allows the television device...

Claims

1. a first pixel to a fourth pixel, a first data line and a second data line, a first scanning line and a second scanning line, and a power supply line; the first pixel includes a first transistor, a second transistor, and a first light-emitting element; the second pixel includes a third transistor, a fourth transistor, and a second light-emitting element; the third pixel includes a fifth transistor, a sixth transistor, and a third light-emitting element; the fourth pixel includes a seventh transistor, an eighth transistor, and a fourth light-emitting element; one of a source and a drain of the first transistor is electrically connected to the first data line; a gate of the first transistor electrically connected to the first scan line; the second transistor has a function of controlling a current flowing between the power supply line and the first light-emitting element in accordance with a first signal input to the first pixel via the first transistor; one of the source and the drain of the third transistor is electrically connected to the first data line; a gate of the third transistor electrically connected to the second scan line; the fourth transistor has a function of controlling a current flowing between the power supply line and the second light-emitting element in accordance with a second signal input to the second pixel via the third transistor; one of the source and the drain of the fifth transistor is electrically connected to the second data line; a gate of the fifth transistor electrically connected to the first scan line; the sixth transistor has a function of controlling a current flowing between the power supply line and the third light-emitting element in accordance with a third signal input to the third pixel via the fifth transistor; one of the source and the drain of the seventh transistor is electrically connected to the second data line; a gate of the seventh transistor electrically connected to the second scan line; the eighth transistor has a function of controlling a current flowing between the power supply line and the fourth light-emitting element in accordance with a fourth signal input to the fourth pixel via the seventh transistor, the first conductive film having a function as a power supply line overlaps with a second conductive film having a function as a pixel electrode of the first light-emitting element; the first conductive film overlaps with a third conductive film that functions as a pixel electrode of the second light-emitting element; the first conductive film overlaps with a fourth conductive film that functions as a pixel electrode of the third light-emitting element; the first conductive film overlaps with a fifth conductive film that functions as a pixel electrode of the fourth light-emitting element; the first conductive film has a first opening and a second opening; the second conductive film overlaps with the first opening, the third conductive film overlaps with the second opening, the fourth conductive film overlaps with the first opening, the fifth conductive film overlaps with the second opening; Light-emitting device.

2. a first pixel to a fourth pixel, a first data line and a second data line, a first scanning line and a second scanning line, and a power supply line; the first pixel includes a first transistor, a second transistor, and a first light-emitting element; the second pixel includes a third transistor, a fourth transistor, and a second light-emitting element; the third pixel includes a fifth transistor, a sixth transistor, and a third light-emitting element; the fourth pixel includes a seventh transistor, an eighth transistor, and a fourth light-emitting element; one of a source and a drain of the first transistor is electrically connected to the first data line; a gate of the first transistor electrically connected to the first scan line; the second transistor has a function of controlling a current flowing between the power supply line and the first light-emitting element in accordance with a first signal input to the first pixel via the first transistor; one of the source and the drain of the third transistor is electrically connected to the first data line; a gate of the third transistor electrically connected to the second scan line; the fourth transistor has a function of controlling a current flowing between the power supply line and the second light-emitting element in accordance with a second signal input to the second pixel via the third transistor; one of the source and the drain of the fifth transistor is electrically connected to the second data line; a gate of the fifth transistor electrically connected to the first scanning line; the sixth transistor has a function of controlling a current flowing between the power supply line and the third light-emitting element in accordance with a third signal input to the third pixel via the fifth transistor; one of the source and the drain of the seventh transistor is electrically connected to the second data line; a gate of the seventh transistor electrically connected to the second scan line; the eighth transistor has a function of controlling a current flowing between the power supply line and the fourth light-emitting element in accordance with a fourth signal input to the fourth pixel via the seventh transistor, the first conductive film having a function as a power supply line overlaps with a second conductive film having a function as a pixel electrode of the first light-emitting element; the first conductive film overlaps with a third conductive film that functions as a pixel electrode of the second light-emitting element; the first conductive film overlaps with a fourth conductive film that functions as a pixel electrode of the third light-emitting element; the first conductive film overlaps with a fifth conductive film that functions as a pixel electrode of the fourth light-emitting element; the first conductive film has a first opening and a second opening; the second conductive film overlaps with the first opening, the third conductive film overlaps with the second opening, the fourth conductive film overlaps with the first opening, the fifth conductive film overlaps with the second opening, a channel formation region of the second transistor and a channel formation region of the fourth transistor are disposed between the first data line and the second data line in a plan view; Light-emitting device.

3. a first pixel to a fourth pixel, a first data line and a second data line, a first scanning line and a second scanning line, and a power supply line; the first pixel includes a first transistor, a second transistor, and a first light-emitting element; the second pixel includes a third transistor, a fourth transistor, and a second light-emitting element; the third pixel includes a fifth transistor, a sixth transistor, and a third light-emitting element; the fourth pixel includes a seventh transistor, an eighth transistor, and a fourth light-emitting element; one of a source and a drain of the first transistor is electrically connected to the first data line; a gate of the first transistor electrically connected to the first scan line; the second transistor has a function of controlling a current flowing between the power supply line and the first light-emitting element in accordance with a first signal input to the first pixel via the first transistor; one of the source and the drain of the third transistor is electrically connected to the first data line; a gate of the third transistor electrically connected to the second scan line; the fourth transistor has a function of controlling a current flowing between the power supply line and the second light-emitting element in accordance with a second signal input to the second pixel via the third transistor; one of the source and the drain of the fifth transistor is electrically connected to the second data line; a gate of the fifth transistor electrically connected to the first scanning line; the sixth transistor has a function of controlling a current flowing between the power supply line and the third light-emitting element in accordance with a third signal input to the third pixel via the fifth transistor; one of the source and the drain of the seventh transistor is electrically connected to the second data line; a gate of the seventh transistor electrically connected to the second scan line; the eighth transistor has a function of controlling a current flowing between the power supply line and the fourth light-emitting element in accordance with a fourth signal input to the fourth pixel via the seventh transistor, the first conductive film having a function as a power supply line overlaps with a second conductive film having a function as a pixel electrode of the first light-emitting element; the first conductive film overlaps with a third conductive film that functions as a pixel electrode of the second light-emitting element; the first conductive film overlaps with a fourth conductive film that functions as a pixel electrode of the third light-emitting element; the first conductive film overlaps with a fifth conductive film that functions as a pixel electrode of the fourth light-emitting element; the first conductive film has a first opening and a second opening; the second conductive film overlaps with the first opening, the third conductive film overlaps with the second opening, the fourth conductive film overlaps with the first opening, the fifth conductive film overlaps with the second opening, In a cross-sectional view, the first conductive film has a region disposed below each of the second to fifth conductive films. Light-emitting device.

4. a first pixel to a fourth pixel, a first data line and a second data line, a first scanning line and a second scanning line, and a power supply line; the first pixel includes a first transistor, a second transistor, and a first light-emitting element; the second pixel includes a third transistor, a fourth transistor, and a second light-emitting element; the third pixel includes a fifth transistor, a sixth transistor, and a third light-emitting element; the fourth pixel includes a seventh transistor, an eighth transistor, and a fourth light-emitting element; one of a source and a drain of the first transistor is electrically connected to the first data line; a gate of the first transistor electrically connected to the first scan line; the second transistor has a function of controlling a current flowing between the power supply line and the first light-emitting element in accordance with a first signal input to the first pixel via the first transistor; one of the source and the drain of the third transistor is electrically connected to the first data line; a gate of the third transistor electrically connected to the second scan line; the fourth transistor has a function of controlling a current flowing between the power supply line and the second light-emitting element in accordance with a second signal input to the second pixel via the third transistor; one of the source and the drain of the fifth transistor is electrically connected to the second data line; a gate of the fifth transistor electrically connected to the first scan line; the sixth transistor has a function of controlling a current flowing between the power supply line and the third light-emitting element in accordance with a third signal input to the third pixel via the fifth transistor; one of the source and the drain of the seventh transistor is electrically connected to the second data line; a gate of the seventh transistor electrically connected to the second scan line; the eighth transistor has a function of controlling a current flowing between the power supply line and the fourth light-emitting element in accordance with a fourth signal input to the fourth pixel via the seventh transistor, the first conductive film having a function as a power supply line overlaps with a second conductive film having a function as a pixel electrode of the first light-emitting element; the first conductive film overlaps with a third conductive film that functions as a pixel electrode of the second light-emitting element; the first conductive film overlaps with a fourth conductive film that functions as a pixel electrode of the third light-emitting element; the first conductive film overlaps with a fifth conductive film that functions as a pixel electrode of the fourth light-emitting element; the first conductive film has a first opening and a second opening; the second conductive film overlaps with the first opening, the third conductive film overlaps with the second opening, the fourth conductive film overlaps with the first opening, the fifth conductive film overlaps with the second opening, a channel formation region of the second transistor and a channel formation region of the fourth transistor are disposed between the first data line and the second data line in a plan view; In a cross-sectional view, the first conductive film has a region disposed below each of the second to fifth conductive films. Light-emitting device.

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