Light emitting apparatus

Abstract

To provide a light emitting apparatus to facilitate wire jointing.SOLUTION: A light emitting apparatus comprises: a base having a side-face part surrounding a bottom face and extending upward; a light emitting device arranged on the bottom face; an electronic component irradiated with light emitted from the light emitting device arranged on the bottom face; first wiring electrically connected to the light emitting device; and second wiring electrically connected to the electronic component. The side-face part has: a first step which is a step composed of an inner face and a top face; and a second step located higher from the bottom face than the first step. The first step has one or more first wiring regions, and the second step has one or more second wiring regions. One end of the first wiring is connected to one of the first wiring region and the second wiring region, and one end of the second wiring is connected to the other one of the first wiring region and the second wiring region.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a light emitting device. [Background technology]

[0002] As disclosed in Patent Document 1, an optical module is already known in which a step is provided in a base having a recess formed therein and a bonding wire is connected to the step portion. In addition, in the optical module of Patent Document 1, a light-receiving element is also arranged in the recess in addition to a light-emitting element. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2014-157873 Summary of the Invention [Problem to be solved by the invention]

[0004] The optical module of Patent Document 1 does not have a configuration in which the light-emitting element and the light-receiving element are electrically connected by wiring, and therefore does not disclose how to easily connect the wiring between the light-emitting element and the electronic components such as the light-receiving element. [Means for solving the problem]

[0005] A light emitting device according to the present invention includes a base having a side portion surrounding a bottom surface and extending upward from the bottom surface, one or more light emitting elements arranged on the bottom surface, an electronic component arranged on the bottom surface and irradiated with light emitted from the light emitting elements, one or more first wirings electrically connected to the light emitting elements, and one or more second wirings electrically connected to the electronic component, wherein the side portion has a step portion formed by an inner side surface and an upper surface, the step portion having a first step portion and a second step portion located higher from the bottom surface than the first step portion, and a front The first step portion is provided with one or more first wiring regions, the second step portion is provided with one or more second wiring regions, one end of the first wiring is joined to one of the first wiring region and the second wiring region, one end of the second wiring is joined to the other of the first wiring region and the second wiring region, and the other end of the first wiring or the second wiring that is joined to the first wiring region is joined at a position lower in height from the bottom surface than the other end of the wiring that is joined to the second wiring region. [Effects of the Invention]

[0006] According to the present invention, in a light emitting device in which a light emitting element and an electronic component are arranged, it is possible to easily join wiring relating to the light emitting element and the electronic component. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a perspective view of the light emitting device according to the first embodiment. [Figure 2] FIG. 2 is a perspective view of the light emitting device according to the first embodiment with the cover member removed. [Figure 3] FIG. 3 is a top view of the light emitting device according to the first embodiment with the cover member removed. [Figure 4] FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. [Figure 5] FIG. 5 is a perspective view of the light emitting device according to the second embodiment. [Figure 6] FIG. 6 is a perspective view of the light emitting device according to the second embodiment with the cover member removed. [Figure 7] FIG. 7 is a top view of the light emitting device according to the second embodiment with the cover member removed. [Figure 8] FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. [Figure 9] FIG. 9 is a top view of the electronic component according to the second embodiment. [Figure 10] FIG. 10 is a perspective view of the light emitting device according to the third embodiment. [Figure 11] FIG. 11 is a top view of the light emitting device according to the third embodiment with the cover member removed. DETAILED DESCRIPTION OF THE INVENTION

[0008] In this specification and claims, polygons such as triangles and quadrilaterals are referred to as polygons, including shapes in which the corners of the polygons have been rounded, chamfered, corner-cut, rounded, etc. Furthermore, shapes in which processing has been applied not only to the corners (edges of the sides) but also to the middle portions of the sides are also referred to as polygons. In other words, shapes in which partial processing has been applied while retaining the polygonal base are included in the interpretation of "polygon" described in this specification and claims.

[0009] The same applies to words that describe specific shapes, such as trapezoids, circles, and irregularities, not just polygons. The same also applies when dealing with the sides that form the shape. In other words, even if the corners or middle part of a side are processed, the interpretation of "side" includes the processed part. Note that when distinguishing a "polygon" or "side" that has no processing from a processed shape, the word "strict" is added, for example, "strict quadrangle."

[0010] Furthermore, in this specification or the claims, when there are multiple equivalents to a certain element and each is to be expressed separately, the element may be distinguished by adding "first" or "second" to the beginning of the element. Furthermore, when the objects or viewpoints distinguished between this specification and the claims are different, the same notation may not refer to the same object between the specification and the claims.

[0011] For example, if there are objects in this specification that are distinguished by being marked with "first," "second," or "third," and the claims are written with only the "first" and "third" in this specification as the subject matter, the objects marked with "first" and "second" in the claims may refer to the objects marked with "first" and "third" in this specification.

[0012] Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, although the illustrated embodiments embody the technical concept of the present invention, they do not limit the present invention. Furthermore, in the following description, the same names and symbols indicate the same or similar components, and redundant explanations may be omitted as appropriate. Note that the size and positional relationship of components shown in each drawing may be exaggerated for ease of understanding.

[0013] First Embodiment A light emitting device 1 according to a first embodiment will be described. FIGS. 1 to 4 are drawings for explaining an exemplary embodiment of the light emitting device 1. FIG. 1 is a perspective view of the light emitting device 1. FIG. 2 is a perspective view of the light emitting device 1 with a cover member 80 removed. FIG. 3 is a top view in the same state as FIG. 2. FIG. 4 is a cross-sectional view taken along the line IV-IV in FIG. 3.

[0014] The light emitting device 1 has as its components a base 10, three semiconductor laser elements 20, a submount 30, electronic components 40, a support base 50, optical components 60, multiple wirings 70, and a lid member 80 (see Figure 4 in particular for the support base 50).

[0015] In the light emitting device 1, three semiconductor laser elements 20, a submount 30, electronic components 40, a support base 50, optical components 60, and a plurality of wirings 70 are arranged in a space surrounded by a base 10 and a lid member 80. In addition, in the light emitting device 1, light is emitted from the three semiconductor laser elements 20 arranged in the space. First, each component will be described.

[0016] (base 10) The base 10 has an arrangement area, which is an area for arranging other components, and a sidewall surrounding the arrangement area. The base also has a recess that includes the arrangement area and the sidewall. The recess is recessed from the top surface of the base 10 toward the bottom surface. Here, the surface that forms the bottom of the recess is referred to as the bottom surface. The bottom surface can be a major part of the arrangement area.

[0017] When viewed from above, the outer shape of the base 10 is rectangular. When viewed from above, the outer shape of the recessed portion of the recess is rectangular. When viewed from above, the outer shape of the bottom surface of the base 10 is rectangular and is smaller than the outer shape of the recessed portion. Note that these outer shapes do not have to be rectangular.

[0018] The base 10 has a bottom surface portion 11 and a side surface portion 12. The bottom surface portion 11 is a portion that constitutes the bottom surface of the base 10. The bottom surface portion 11 also includes the bottom surface and lower surface of the base 10. The side surface portion 12 is a portion that constitutes the side wall of the base 10. Therefore, the side surface portion 12 surrounds the bottom surface of the base 10 and extends upward from the bottom surface. The side surface portion 12 also includes one or more outer surfaces, one or more inner surfaces, and an upper surface that intersects with the outer and inner surfaces of the base 10.

[0019] Here, the number of inner or outer surfaces of the base 10 depends on the shape surrounding the bottom surface. For example, if the shape surrounding the bottom surface is rectangular, inner surfaces are formed corresponding to each of the four sides of the rectangle, and the number of inner surfaces is multiple. For example, if the shape surrounding the bottom surface is circular, inner surfaces are formed corresponding to one circle, and the number of inner surfaces is one. The same applies to the outer surfaces.

[0020] The base 10 has multiple step portions. Here, the step portion refers to a portion consisting only of an upper surface and an inner surface that intersects with the upper surface and extends downward. The multiple step portions are included in the side surface portion 12 of the base 10. Each of the multiple step portions is provided between the bottom surface of the base 10 and the top surface. In addition, when viewed from above, each step portion is formed between the outline of the recessed portion of the base 10 and the outline of the bottom surface.

[0021] The multiple step portions are formed along the inner side surface that intersects with the upper surface of the base 10. Therefore, the upper surfaces of the multiple step portions intersect with the inner side surface that intersects with the upper surface of the base 10. Furthermore, the steps formed by the multiple step portions extend along the entire periphery of one or more inner sides that surround the placement area of the base 10. Note that the steps do not have to be formed along the entire periphery.

[0022] The plurality of step portions include a first step portion 13 and a second step portion 15. In the illustrated example of the light emitting device 1, the plurality of step portions are configured only by the first step portion 13 and the second step portion 15, but other step portions may also be included.

[0023] The first step portion 13 and the second step portion 15 have different heights. That is, the first step portion 13 and the second step portion 15 have different heights from the bottom surface of the base 10 to the top surface of the step portion. In the example of the light-emitting device 1 shown in the figures, the second step portion 15 has a greater height from the bottom surface of the base 10 than the first step portion 13. Note that the first step portion 13 may be a base having a greater height than the second step portion 15.

[0024] The upper surface of first step portion 13 and second step portion 15 are each formed along a portion of one or more inner side surfaces that intersect with the upper surface of base portion 10. Therefore, the upper surface of first step portion 13 intersects with a portion of one or more inner side surfaces that intersect with the upper surface of base portion 10, and the upper surface of second step portion 15 intersects with a portion of one or more inner side surfaces that intersect with the upper surface of base portion 10 that is different from the portion where the upper surface of first step portion 13 intersects.

[0025] In a top view, the length along which the first step portion 13 extends is longer than the length along which the second step portion 15 extends with respect to one or more inner surfaces that intersect with the upper surface of the base portion 10. Furthermore, the second step portion 15 is formed along a portion of the entire circumference of the one or more inner surfaces, and the first step portion 13 is formed along the remaining portion of the entire circumference.

[0026] In the illustrated example of light-emitting device 1, the four inner surfaces form a rectangular shape when viewed from above, but the length of the portion along which first step portion 13 runs is equal to or greater than the combined length of the two long sides of the rectangle and equal to or less than the combined length of the two long sides and one short side of the rectangle. Also, the length of the portion along which second step portion 15 runs is equal to or greater than the combined length of one short side of the rectangle and equal to or less than the combined length of one long side.

[0027] One or more inner surfaces of the first step portion 13 have a lower side that intersects with the bottom surface of the base 10. In addition, the inner surface of the second step portion 15 has a lower side that intersects with the bottom surface of the base 10. Because the step portions are provided so as to rise from the bottom surface, the step portions can be provided in positions close to the placement area. The length of the portion where the first step portion 13 intersects with the bottom surface of the base 10 is longer than the length of the portion where the second step portion 15 intersects with the bottom surface of the base 10.

[0028] Furthermore, the lower side of the inner surface of first step portion 13 does not intersect with second step portion 15 except at the end point of this side. At this end point, the bottom surface of base 10 and the inner surface of second step portion 15 intersect.

[0029] Additionally, the inner surface of second step portion 15 has a lower side that intersects with the bottom surface of base 10 and a lower side that intersects with the top surface of first step portion 13. The length of the portion where the inner surface of second step portion 15 intersects with the bottom surface of base 10 is greater than the length of the portion where the inner surface of second step portion 15 intersects with the top surface of first step portion 13. This allows a wide bottom surface to be secured, ensuring a sufficient arrangement area.

[0030] The height of second step portion 15 from the bottom surface of base 10 is preferably in the range of 1.2 to 3.0 times the height of first step portion 13 from the bottom surface of base 10. Furthermore, it is preferable that the height of first step portion 13 is less than half the height from the bottom surface to the top surface of base 10, and that the height of second step portion 15 is greater than half the height from the bottom surface to the top surface of base 10.

[0031] One or more first wiring regions 14 are provided on the upper surface of the first step portion 13. In the illustrated example of the light emitting device 1, multiple first wiring regions 14 are provided. These first wiring regions 14 pass through the inside of the base 10 and are electrically connected to wiring regions provided on the lower surface of the base 10. Note that the wiring region electrically connected to the first wiring region 14 is not limited to being provided on the lower surface of the base 10, but can also be provided on the outer surface (upper surface, outer surface, and lower surface) of the base 10.

[0032] One or more second wiring regions 16 are provided on the upper surface of the second step portion 15. In the illustrated example of the light emitting device 1, multiple second wiring regions 16 are provided. These second wiring regions 16 pass through the inside of the base 10 and are electrically connected to a wiring region provided on the lower surface of the base 10. Note that the wiring region electrically connected to the second wiring region 16 is not limited to being provided on the lower surface of the base 10, but can also be provided on the outer surface (upper surface, outer surface, and lower surface) of the base 10.

[0033] The base 10 can be formed primarily from ceramic, such as aluminum nitride, silicon nitride, aluminum oxide, and silicon carbide.

[0034] The base 10 can be formed by integrating the bottom surface portion 11 and the side surface portion 12. Alternatively, the bottom surface portion 11 and the side surface portion 12 may be formed separately using different materials as the main materials, and then the base 10 can be formed by joining the bottom surface portion 11 and the side surface portion 12. In this case, the bottom surface portion 11 can be made primarily of metal, and the side surface portion 12 can be made primarily of ceramic.

[0035] In this case, the metal used for the bottom portion 11 is preferably one that has better heat dissipation properties (higher thermal conductivity) than the ceramic used for the side portion 12. For example, copper, aluminum, iron, etc., or composites such as copper molybdenum, copper-diamond composite material, and copper tungsten can be used.

[0036] Furthermore, metal films are provided in the first wiring region 14 of the base 10 and the wiring region electrically connected thereto, and in the locations corresponding to the second wiring region 16 and the wiring region electrically connected thereto. Metal is also provided in the locations that pass through the interior for electrical connection, thereby achieving electrical connection.

[0037] (semiconductor laser element 20) The semiconductor laser element 20 has a rectangular outer shape when viewed from above. A side surface intersecting one of the two short sides of the rectangle serves as an emission end surface for light emitted from the semiconductor laser element 20. The upper and lower surfaces of the semiconductor laser element 20 have areas larger than that of the emission end surface.

[0038] The semiconductor laser element 20 is a multi-emitter having two emitters. One electrode common to the two emitters is provided on either the top or bottom surface of the semiconductor laser element 20, and two electrodes corresponding to the respective emitters are provided on the other surface.

[0039] The light (laser light) emitted from each emitter of the semiconductor laser element 20 has a divergence and forms an elliptical far-field pattern (hereinafter referred to as "FFP") in a plane parallel to the light emitting end face. The FFP is the shape and light intensity distribution of the emitted light at a position away from the emitting end face.

[0040] Here, the light passing through the center of the elliptical shape of the FFP, in other words, the light with peak intensity in the light intensity distribution of the FFP, is called the light traveling along the optical axis. Also, in the light intensity distribution of the FFP, the peak intensity value is 1 / e 2 The light having the above intensity is called the main part of the light.

[0041] The shape of the FFP of the light emitted from the semiconductor laser element 20 is an ellipse in which the stacking direction perpendicular to the layering direction of the multiple semiconductor layers including the active layer is longer than the layering direction of the multiple semiconductor layers including the active layer. Note that the layering direction is referred to as the horizontal direction of the FFP, and the stacking direction is referred to as the vertical direction of the FFP.

[0042] Based on the optical intensity distribution of the FFP, the angle corresponding to the full width at half maximum of the optical intensity distribution is defined as the optical divergence angle of the semiconductor laser element. The optical divergence angle in the vertical direction of the FFP is defined as the vertical divergence angle, and the optical divergence angle in the horizontal direction of the FFP is defined as the horizontal divergence angle.

[0043] For example, a semiconductor laser element that emits blue light, a semiconductor laser element that emits green light, or a semiconductor laser element that emits red light can be used as the semiconductor laser element 20. Also, a semiconductor laser element that emits light other than these may be used.

[0044] Here, blue light refers to light whose peak emission wavelength is in the range of 420 nm to 494 nm, green light refers to light whose peak emission wavelength is in the range of 495 nm to 570 nm, and red light refers to light whose peak emission wavelength is in the range of 605 nm to 750 nm.

[0045] Examples of semiconductor laser elements that emit blue light or green light include semiconductor laser elements that contain nitride semiconductors. Examples of nitride semiconductors that can be used include GaN, InGaN, and AlGaN. Examples of semiconductor laser elements that emit red light include those that contain InAlGaP-based, GaInP-based, GaAs-based, and AlGaAs-based semiconductors.

[0046] (Submount 30) The submount 30 has two opposing bonding surfaces and is configured in a rectangular parallelepiped shape. Furthermore, the distance between the two opposing bonding surfaces of the submount 30 is smaller than the distance between the other two opposing surfaces. The shape of the submount 30 is not limited to a rectangular parallelepiped. The submount 30 can be formed using, for example, silicon nitride, aluminum nitride, or silicon carbide. Furthermore, a metal film is provided on the upper surface of the submount 30.

[0047] (Electronic Components 40) The electronic component 40 has a bonding surface and a light irradiation surface. The bonding surface and the light irradiation surface face each other. The electronic component 40 also constitutes a part of a light control unit that controls light irradiated onto the light irradiation surface.

[0048] For example, a Micro Electro Mechanical System (hereinafter abbreviated as MEMS) can be used as the electronic component 40. Alternatively, for example, a light receiving element such as a photodiode (hereinafter abbreviated as PD) can be used. Furthermore, the electronic component 40 can reflect 80% or more of the light irradiated onto the light irradiation surface.

[0049] (Support stand 50) The support base 50 has a lower surface and an inclined surface 51 inclined relative to the lower surface. The inclined surface 51 is neither perpendicular nor parallel when viewed from the lower surface. For example, the inclined surface 51 is configured as a plane that forms an inclination angle of 45 degrees with respect to the lower surface. Note that the inclination angle does not have to be limited to 45 degrees. Furthermore, the inclined surface 51 is one or more inclined surfaces on the support base 50 that are inclined relative to the lower surface, and if there are multiple inclined surfaces, it is the inclined surface with the largest area.

[0050] Furthermore, when viewed from above, the inclined surface 51 occupies 60% or more of the area of the support base 50. Furthermore, when viewed from above, the width from the upper end to the lower end of the inclined surface 51 is 60% or more of the width of the support base 50 in the same direction. In other words, the support base 50 has a structure in which the inclined surface 51 occupies a major proportion in this direction.

[0051] The support base 50 can be made of, for example, ceramic, glass, or metal. For example, ceramic such as aluminum nitride, glass such as quartz or borosilicate glass, or metal such as aluminum can be used. Alternatively, the support base 50 can be made of Si or the like.

[0052] (Optical Components 60) Optical component 60 has a cemented surface and a lens surface 61. Lens surface 61 is a surface having a lens shape. The cemented surface and lens surface 61 are positioned such that, when the cemented surface is the bottom surface, lens surface 61 is the side surface.

[0053] Lens surface 61 has a shape in which a plurality of lenses are connected together. Here, lens surface 61 is formed in a shape in which three lenses are connected together in a side view. Optical component 60 can be formed using glass such as BK7, for example.

[0054] (Wiring 70) The wiring 70 is configured in a linear shape with joints at both ends. In other words, both ends of the linear portion have joints that are joined to other components. The wiring 70 is, for example, a metal wire. Examples of metals that can be used include gold, aluminum, silver, and copper.

[0055] (Cover member 80) The lid member 80 has a bottom surface and a top surface, and is configured in the shape of a rectangular parallelepiped flat plate. However, it does not have to be a rectangular parallelepiped. Furthermore, the lid member 80 has translucency that allows light to pass through. Therefore, the lid member 80 can also be called a translucent member. However, a translucent member that does not function as a lid may also be used.

[0056] Here, translucency means that the transmittance of light is 80% or more. However, it is not necessary for the transmittance to be 80% or more for all wavelengths of light. Furthermore, the cover member 80 may have a non-translucent region (a region that does not have translucency) in part.

[0057] The cover member 80 can be made of sapphire. Sapphire is a light-transmitting material with a relatively high refractive index and relatively high strength. In addition to sapphire, other materials such as glass can also be used.

[0058] (Light-emitting device 1) Next, we will explain the light emitting device 1. The light emitting device 1 has a base 10, three semiconductor laser elements 20 arranged on the base 10, an electronic component 40 arranged on the base 10, a plurality of first wirings 71 for electrically connecting the three semiconductor laser elements 20 among the plurality of wirings 70, and a plurality of second wirings 72 for electrically connecting the electronic components 40 among the plurality of wirings 70.

[0059] In the light emitting device 1, the three semiconductor laser elements 20 are disposed on the base 10 via submounts 30. Alternatively, the semiconductor laser elements 20 may be disposed directly on the bottom surface of the base 10 without the submounts 30. In this case, the outer shape of the semiconductor laser elements 20 may be changed to adjust the light emission position (height) on the emission end face.

[0060] The electronic component 40 is disposed on the base 10 via a support stand 50. The electronic component 40 may be disposed directly on the bottom surface of the base 10 without using the support stand 50. In this case, the external shape of the electronic component 40 may be changed to adjust the position (height) and orientation (tilt) of the light irradiation surface 41.

[0061] The light emitting device 1 also has an optical component 60 disposed on the base 10. The light emitting device 1 also has a lid member 80 that is bonded to the base 10 and seals the space in which the three semiconductor laser elements 20 are disposed.

[0062] The three semiconductor laser elements 20 are arranged on the bottom surface of the base 10. Therefore, they can be said to be arranged on the bottom surface portion 11 of the base 10. The three semiconductor laser elements 20 are arranged side by side with their emission end faces facing the same direction. Furthermore, the side faces of adjacent semiconductor laser elements 20 that intersect with their emission end faces face each other.

[0063] The three semiconductor laser elements 20 may be configured, for example, by a semiconductor laser element that emits blue light, a semiconductor laser element that emits green light, and a semiconductor laser element that emits red light. Alternatively, a configuration may be provided in which a plurality of semiconductor laser elements that emit light of the same color are included, or a configuration may be provided in which semiconductor laser elements that emit light of other colors are included.

[0064] The number of semiconductor laser elements 20 arranged in the light emitting device 1 does not have to be three. It may be more than three or less than three. Also, other light emitting elements such as LEDs may be used instead of the semiconductor laser elements 20. The light emitting device 1 has at least one light emitting element.

[0065] One bonding surface of the submount 30 is bonded to the three semiconductor laser elements 20. The other opposing bonding surface is bonded to the bottom surface of the base 10. Therefore, it can be said that the submount 30 is disposed on the bottom surface portion 11 of the base 10.

[0066] The light emitting device 1 may have multiple submounts 30. In this case, the number of semiconductor laser elements 20 bonded to one submount 30 does not have to be three. It may be two or one. In other words, in the light emitting device 1, each of one or more submounts 30 is bonded to at least one semiconductor laser element 20.

[0067] The electronic component 40 is a MEMS. The electronic component 40 is disposed on the bottom surface of the base 10. Therefore, it can be said that the electronic component 40 is disposed on the bottom surface 11 of the base 10. The electronic component 40 is disposed in a direction such that the light emitted from the semiconductor laser elements 20 is irradiated onto the light irradiation surface 41. The light irradiation surface 41 is irradiated with all of the main portions of the light emitted from each of the three semiconductor laser elements 20.

[0068] The light irradiation surface 41 reflects upward the light emitted laterally from the semiconductor laser element 20. Therefore, the light irradiation surface 41 is inclined with respect to the light emitting end surface and the optical axis. The light irradiation surface 41 is inclined with respect to the bottom surface of the base 10 at an angle of 10 degrees or more and 80 degrees or less.

[0069] The support base 50 is bonded to the electronic component 40 at the inclined surface 51. The support base 50 is arranged so that the inclined surface 51 faces the semiconductor laser element 20. Therefore, it can be said that the electronic component 40 is arranged on the inclined surface 51. By arranging the electronic component 40 via the support base 50, it is not necessary to form the electronic component 40 in a complex shape. It is preferable that the support base 50 is made of a material that is easier to shape than the electronic component 40.

[0070] Furthermore, the lower surface of the support base 50 is joined to the bottom surface of the base 10. Therefore, it can be said that the support base 50 is disposed on the bottom surface portion 11 of the base 10. By joining the lower surface of the support base 50 to the bottom surface of the base 10, the inclined surface 51 is inclined with respect to the bottom surface.

[0071] The optical component 60 is disposed between the emission end face of the semiconductor laser element 20 and the light irradiation surface 41 of the electronic component 40 in a top view. The optical component 60 is disposed so that the lens surface 61 faces the light irradiation surface 41. The three lenses correspond to the light emitted from each of the three semiconductor laser elements 20. Each lens collimates the light from the corresponding semiconductor laser element 20. Therefore, the collimated light is irradiated onto the MEMS serving as the electronic component 40.

[0072] The MEMS reflects the irradiated light upward. The main part of the light emitted from the semiconductor laser element 20 in a predetermined direction toward the electronic component 40 travels in a different direction. The MEMS also reflects only the necessary light from the irradiated light.

[0073] The electronic component 40 is irradiated with light emitted from the semiconductor laser element 20 and expanded, which is collimated by the optical component 60. Therefore, it is necessary to provide the light irradiation surface 41 at a position higher than the light emission point of the semiconductor laser element 20. Therefore, the height of the electronic component 40 is higher than that of the semiconductor laser element 20.

[0074] The length of the light irradiation surface 41 in the direction perpendicular to the bottom surface is longer in the central part and becomes smaller as it moves away from the center. Therefore, among the three semiconductor laser elements 20 arranged side by side, the semiconductor laser element 20 with the largest divergence angle of light in the vertical direction is arranged in the center. This makes it possible to efficiently utilize the light irradiation surface 41. However, the arrangement of the semiconductor laser elements 20 is not limited to this.

[0075] Furthermore, in the illustrated example of the light emitting device 1, the joining point where the wiring is joined is also higher on the electronic component 40 than on the semiconductor laser element 20. Therefore, in the illustrated light emitting device 1, the lower first step portion 13 is used for connecting the wiring to the semiconductor laser element 20, which is located at a lower position, and the higher second step portion 15 is used for connecting the wiring to the electronic component 40, which is located at a higher position, thereby making it easier to join the wiring.

[0076] With the submount 30 disposed on the bottom surface of the base 10, the height from the bottom surface of the base 10 to the bonding surface of the submount 30 to which the semiconductor laser element 20 is bonded is preferably equal to or less than the height of the first step portion 13 of the base 10. Also, the height from the bottom surface of the base 10 to the top surface of the semiconductor laser element 20 is preferably greater than or equal to the height of the first step portion 13 of the base 10. This makes it easier to connect the first wiring 71.

[0077] When the electronic component 40 is disposed on the bottom surface of the base 10, the height of the electronic component 40 exceeds the height of the first step portion 13. In addition, the height of the joint portion of the second wiring 72 in the electronic component 40 exceeds the height of the first step portion 13. In addition, the height of the joint portion of the second wiring 72 in the electronic component 40 is higher than the upper end of the main portion of light irradiated onto the light irradiation surface 41.

[0078] Furthermore, the maximum height (height at the upper end) of the light irradiation surface 41 of the electronic component 40 exceeds the height of the first step portion 13 and the height of the semiconductor laser element 20. On the other hand, the minimum height (height at the lower end) of the light irradiation surface 41 is less than the height of the first step portion 13 and the height of the semiconductor laser element 20.

[0079] When the semiconductor laser element 20 and the electronic component 40 are disposed on the base 10, the inner surface of the base 10 can be divided into two surface regions facing each other with the semiconductor laser element 20 and the electronic component 40 sandwiched in series therebetween, and two surface regions facing each other with the semiconductor laser element 20 and the electronic component 40 sandwiched in parallel therebetween. If the outer shape of the recessed portion of the recess is rectangular when viewed from above, as in the light-emitting device 1, the inner surface corresponding to each of the four sides of the rectangle becomes each surface region.

[0080] At this time, the inner surfaces of the first step portion 13 are formed in two surface regions facing each other with the semiconductor laser element 20 and the electronic component 40 arranged in parallel therebetween. This makes it easier to provide the first wiring region 14 at a position that avoids the optical path of the main part of the light.

[0081] Furthermore, the inner surface of the second step portion 15 is formed on one of two surface regions facing each other with the semiconductor laser element 20 and the electronic component 40 sandwiched in series, the surface region having a shorter distance to the electronic component 40 than to the semiconductor laser element 20. By positioning the second step portion 15 on the back side of the light irradiation surface 41 of the electronic component 40, it becomes easier to prevent the step portion from entering the optical path of the light reflected from the electronic component 40.

[0082] Furthermore, the inner surface of the first step portion 13 is formed on one of two surface regions facing each other with the semiconductor laser element 20 and the electronic component 40 sandwiched in series, the surface region having a longer distance to the electronic component 40 than to the semiconductor laser element 20. This allows the first wiring region 14 to be provided in a region that travels in the opposite direction from the light emitting end face of the semiconductor laser element 20, making it easier to join the wiring 70 while avoiding the optical path of the main part of the light.

[0083] 3, the first step portion 13 has two inner side surfaces facing each other in parallel, and two inner side surfaces facing each other in series, with the inner side surface having a longer distance to the electronic component 40 than the distance to the semiconductor laser element 20. The second step portion 15 has two inner side surfaces facing each other in series, with the inner side surface having a shorter distance to the electronic component 40 than the distance to the semiconductor laser element 20.

[0084] A bonding portion at one of both ends of the first wiring 71 is bonded to the first wiring region 14. In addition, a bonding portion at the other of both ends is bonded to the upper surface of the semiconductor laser element 20 or the upper surface of the submount 30. A bonding region for bonding to the first wiring 71 is provided on the upper surface of the semiconductor laser element 20 or the upper surface of the submount 30.

[0085] It is noted that all of the plurality of first wirings 71, that is, all of the wirings used to electrically connect the three semiconductor laser elements 20, do not have to be joined to the first wiring region 14. A joining portion at one end of one or more first wirings 71 is joined to the first wiring region 14.

[0086] A joint portion at one of both ends of the second wiring 72 is joined to the second wiring region 16. A joint portion at the other of both ends is joined to the electronic component 40. The electronic component 40 is provided with a joint region for joining to the second wiring 72.

[0087] It is noted that not all of the plurality of second wirings 72, i.e., all of the wirings used for electrically connecting the electronic components 40, need to be joined to the second wiring region 16. A joint portion at one end of one or more second wirings 72 is joined to the second wiring region 16.

[0088] The bonding region of the electronic component 40 is located above the center of the light irradiation surface 41. The height of the bonding region of the electronic component 40 is higher than the height of the bonding regions of the semiconductor laser element 20 and the submount 30. The bonding region of the electronic component 40 is preferably located near the upper end of the surface on which the light irradiation surface 41 is provided. By locating the bonding region in such a position, it becomes easier to bond the second wiring 72.

[0089] Moreover, it is preferable that the bonding region of the electronic component 40 with the second wiring 72 be located away from the light irradiation surface 41. By providing the bonding region outside the light irradiation surface 41, it becomes easier to stretch the second wiring 72 so as not to block the light from the semiconductor laser element 20.

[0090] In the illustrated example of the light emitting device 1, the number of wires related to the electrical connection of the semiconductor laser element 20 is greater than the number of wires related to the electrical connection of the electronic component 40. Therefore, the number of first wires 71 is greater than the number of second wires 72, and as a result, the number of first wiring regions 14 is greater than the number of second wiring regions 16.

[0091] In the illustrated example of light emitting device 1, the length of the portion along the periphery of first step portion 13 is longer than the length of the portion along the periphery of second step portion 15, and by providing a longer step portion where more wiring regions are provided, wiring connection is made easier. Therefore, the relationship in magnitude between the number of first wiring regions and the number of second wiring regions coincides with the relationship in magnitude between the length of the portion along the periphery of first step portion 13 and the length of the portion along the periphery of second step portion 15.

[0092] The lid member 80 is disposed on the upper surface of the base 10. Therefore, it can be said that the lid member 80 is disposed on the side surface 12 of the base 10. The lid member 80 is also bonded to the upper surface of the base 10 located above the second step portion 15. Furthermore, by bonding the lid member 80, a closed space surrounded by the base 10 and the lid member 80 is created. This space is the space in which the semiconductor laser element 20 is disposed.

[0093] Furthermore, by joining the lid member 80 to the base 10 under a predetermined atmosphere, a hermetically sealed closed space is created. By hermetically sealing the space in which the semiconductor laser element 20 is disposed, quality deterioration due to dust collection can be suppressed.

[0094] In the light emitting device 1, the MEMS used as the electronic component 40 can control the light that passes through the lid member 80 and is emitted from the light emitting device 1. The lid member 80 is also translucent to the light emitted from the semiconductor laser element 20. The light control unit is realized by electrically connecting a control mechanism provided outside the light emitting device 1 and the electronic component 40 via the wiring region of the base 10.

[0095] As disclosed above, in the light emitting device 1, the bonding position of the semiconductor laser element 20 for electrical connection and the bonding position of the electronic component 40 are at different heights, and therefore, the base 10 also has step portions of different heights formed therein to facilitate the connection of the wiring 70. This makes it possible to easily bond the wiring.

[0096] It should be noted that, based on such a technical concept, the light emitting device according to the present invention does not need to be limited to the first embodiment. In the light emitting device 1, the first wiring 71 related to the electrical connection of the semiconductor laser element 20 is bonded to the first step portion 13, which is the lower step portion, and the second wiring 72 related to the electrical connection of the electronic component 40 is bonded to the second step portion 15, which is the higher step portion. This is because the bonding position of the electronic component 40 is higher than the bonding position of the semiconductor laser element 20. However, if the bonding position of the semiconductor laser element 20 is higher than the bonding position of the electronic component 40, it is better to bond the first wiring 71 to the second step portion 15 and the second wiring 72 to the first step portion 13.

[0097] That is, one end of the first wiring 71 is joined to one of the first wiring region 14 and the second wiring region 16, and one end of the second wiring 72 is joined to the other of the first wiring region 14 and the second wiring region 16. Furthermore, of the first wiring 71 and the second wiring 72, the other end joined to the first wiring region 14 is joined at a position lower in height from the bottom surface of the base 10 than the other end of the wiring joined to the second wiring region 16. Furthermore, of the first wiring 71 and the second wiring 72, the other end joined to the second wiring region 16 is disposed at a position higher in height from the bottom surface of the base 10 than the first wiring region 14.

[0098] Second Embodiment A light emitting device 2 according to a second embodiment will be described. FIGS. 5 to 9 are drawings for explaining an exemplary embodiment of the light emitting device 2. FIG. 5 is a perspective view of the light emitting device 2. FIG. 6 is a perspective view of the light emitting device 2 with the cover member 80 removed. FIG. 7 is a top view similar to FIG. 6. FIG. 8 is a cross-sectional view taken along the VIII-VIII line in FIG. 7. FIG. 9 is a top view of an electronic component 40 according to a second embodiment, viewed from the light irradiation surface. The ellipse in FIG. 9 indicates the region irradiated with the main portion of light from the semiconductor laser element 20. The major axis of the ellipse is indicated by a dashed line.

[0099] The light emitting device 2 has as its components a base 10, three semiconductor laser elements 20, a submount 30, electronic components 40, a support base 50, a plurality of wirings 70, and a lid member 80. The light emitting device 2 of the second embodiment differs from the light emitting device 1 of the first embodiment in that it does not have an optical component 60. It also differs from the light emitting device 1 of the first embodiment in that the electronic component is a PD.

[0100] The illustrated example of the light emitting device 2 has a larger number of first wirings 71 than the light emitting device 1 shown in Fig. 3. In the light emitting device 2 according to the second embodiment, three semiconductor laser elements 20 are individually electrically connected to each other so that their outputs can be individually adjusted. Note that each semiconductor laser element 20 is a multi-emitter having two emitters.

[0101] In the light emitting device 2, light receiving regions 242 corresponding to the light emitted from the three semiconductor laser elements 20 are provided on the light irradiation surface 241 of the electronic component 40. A portion of the light irradiated onto the light receiving regions 242 is received, and the remainder is reflected upward. In order to emit a large amount of light, it is preferable to reflect 90% or more of the light. In the example of the light emitting device 2, the three light receiving regions 242 are arranged in the same direction as the three semiconductor laser elements 20 are arranged.

[0102] Furthermore, one light-receiving region 242 corresponds to one semiconductor laser element 20, and each light-receiving region 242 is separated. That is, each light-receiving region 242 is separated and does not overlap. Furthermore, a bonding region with the second wiring 72 for electrical connection is provided corresponding to each light-receiving region 242.

[0103] As shown in FIG. 9, the bonding area with the second wiring 72 in the electronic component 40 has first bonding areas 243 corresponding to each light receiving area and one second bonding area 244 that is used in common for multiple light receiving areas.

[0104] Both the first junction region 243 and the second junction region 244 are provided above a region irradiated with a main portion of light from the semiconductor laser element 20. In other words, in the light emitting device 2, they are provided at positions farther from the semiconductor laser element 20 than the region irradiated with a main portion of light.

[0105] Furthermore, when viewed from above, each of the light receiving regions 242 has a portion at its upper end where its lateral width narrows. Specifically, the upper end has a shape with a notch at the corner. The shape and position of the portion where the lateral width narrows are the same for all of the light receiving regions 242.

[0106] Furthermore, the first bonding region 243 is provided in a region that becomes empty due to the narrowing of the width. One first bonding region 243 associated with one light-receiving region 242 protrudes laterally from that light-receiving region 242. When an adjacent light-receiving region 242 is arranged in the protruding direction, this protruding portion is provided in a region that becomes empty due to the narrowing of the width of the adjacent light-receiving region 242.

[0107] The first bonding region 243 is not provided on a line passing through the major axis of the light of the main portion irradiated to the light receiving region 242. In other words, the first bonding region 243 is provided at a position that avoids this line. As shown in FIGS. 7 and 8 , the second wiring 72 bonded to the first bonding region 243 extends upward from there and is bonded to the second wiring region 16. Avoiding a position on a line passing through the major axis of the light makes it easier to prevent the second wiring 72 from blocking the light reflected by the electronic component 40.

[0108] The first junction region 243, which is sandwiched between the two light receiving regions 242, is provided between lines passing through the major axes of the light that is irradiated onto each of the two light receiving regions 242. In other words, the first junction region 243 does not extend beyond these two lines. This makes it easier to prevent the second wiring 72 from blocking the light that is irradiated onto and reflected from the adjacent light receiving region 242.

[0109] Furthermore, of the two opposing sides of two adjacent light-receiving regions 242 that are closest to each other, the first bonding region 243 protrudes from one side, and a straight line passing through the other side passes through the first bonding region 243. This positional relationship allows the light-receiving regions 242 to be arranged close to each other while providing the first bonding region 243, which contributes to miniaturization of the light-emitting device 2.

[0110] In addition, in a top view, the second bonding area 244 is provided near the upper end of the electronic component 40 and near one of the two lateral sides that is in the opposite direction to the protruding direction of the first bonding area 243. The second bonding area 244 is not provided on a straight line that passes through the major axis of the light of the main portion that is irradiated to the light receiving area 242 that is located closest to the second bonding area 244.

[0111] It should be noted that the present invention is not limited to a configuration in which one light receiving region corresponds to one semiconductor laser element 20, and one light receiving region may correspond to a plurality of semiconductor laser elements 20. One or a plurality of light receiving regions are provided on the light irradiation surface 241.

[0112] In the light emitting device 2, the PD used as the electronic component 40 can receive a predetermined proportion of the light irradiated onto the light irradiation surface 241. Based on the light reception result, the light control unit can calculate the amount of light emitted from the light emitting device 2 and the amount of light reflected by the electronic component 40. Furthermore, based on the calculation result, it becomes possible to perform control such as adjusting the intensity of the light emitted from the semiconductor laser element 20.

[0113] <Third embodiment> Fig. 10 is a perspective view of a light emitting device 3 according to the third embodiment. Fig. 11 is a top view of the light emitting device 3 shown in Fig. 10 with the cover member 80 removed.

[0114] The light emitting device 3 has, as its components, a base 310, three semiconductor laser elements 20, a submount 30, electronic components 40, a support base 50, a plurality of wirings 70, and a lid member 80. The light emitting device 3 of the third embodiment differs from the base 10 of the first and second embodiments in the location where the step portion is formed. Furthermore, the light emitting device 3 needs to secure fewer first wiring regions 14 than the light emitting devices 1 and 2.

[0115] The number of first wiring regions 14 to be secured may be affected by, for example, the number of semiconductor laser elements 20. When it is desired to drive the semiconductor laser elements 20 individually, the number of necessary wiring regions increases as the number of semiconductor laser elements 20 increases. If this wiring region is provided in the first step portion described above, the number of first wiring regions 14 will increase.

[0116] Furthermore, for example, the number of first wiring regions 14 to be secured may be affected by the number of emitters of one semiconductor laser element 20. If it is desired to drive the semiconductor laser element 20 on an emitter-by-emitter basis, the number of required wiring regions increases as the number of emitters increases. If this wiring region is provided in the first step portion, the number of first wiring regions 14 will increase.

[0117] In the illustrated example of the light emitting device 3, each of the three semiconductor laser elements 20 is configured with a single emitter. Note that the number of first wiring regions is not limited to this and may vary depending on other factors. For example, a protection element such as a Zener diode may be provided to protect the semiconductor laser elements 20.

[0118] The area that must be reserved for the first step varies depending on the number of first wiring regions that need to be provided. If the area where the first step is formed can be appropriately designed and the size of the base can be reduced, it will lead to a miniaturization of the light-emitting device.

[0119] In the light emitting device 3, the inner surface of the first step portion 313 of the side surface portion 312 is not formed on the surface region where the distance to the electronic component 40 is shorter than the distance to the semiconductor laser element 20, of the two surface regions facing each other with the semiconductor laser element 20 and the electronic component 40 sandwiched in series. This allows the light emitting device to be designed compactly.

[0120] In the illustrated example of the light emitting device 3, the first step portion 313 has two inner side surfaces that face each other and are sandwiched in parallel. Of the two inner side surfaces that face each other and are sandwiched in series, there is no step portion that has an inner side surface that is longer from the semiconductor laser element 20 to the electronic component 40.

[0121] In addition, in the light emitting device 3, the first step portion 313 is formed in a region that, when viewed from above, for all three semiconductor laser elements 20, is a straight line perpendicular to the light emitting end surface of the semiconductor laser element 20 and does not intersect with any straight line passing through the semiconductor laser element 20.

[0122] Although the light-emitting device according to the embodiment has been described above, the light-emitting device according to the present invention is not strictly limited to the light-emitting device of the embodiment. In other words, the present invention can be realized without being limited to the external shape and structure of the light-emitting device disclosed in the embodiment. Furthermore, the present invention can be applied without necessarily including all necessary and sufficient components. For example, if the claims do not recite some of the components of the light-emitting device disclosed in the embodiment, the claims allow for the design freedom of those components by those skilled in the art, such as substitution, omission, modification of shape, and change of material, and specify that the invention described in the claims is applicable. [Industrial Applicability]

[0123] The light emitting device described in each embodiment can be used in head-mounted displays, projectors, vehicle headlights, lighting, displays, and the like. [Explanation of symbols]

[0124] 1, 2, 3 Light-emitting device 10, 310 base 11 Bottom part 12, 312 side part 13, 313 First step 14 1st wiring area 15 Second step 16 2nd wiring area 20 Semiconductor laser element 30 Submount 40 Electronic Components 41, 241 Light irradiation surface 242 Light receiving area 243 1st junction area 244 Second junction area 50 Support stand 51 Slope 60 Optical Components 61 Lens surface 70 Wiring 71 1st wiring 72 2nd wiring 80 Lid member

Claims

1. a base portion having a side portion surrounding a bottom surface and extending upward from the bottom surface; one or more light emitting elements disposed on the bottom surface; an electronic component disposed on the bottom surface and irradiated with light emitted from the light-emitting element; one or more first wirings electrically connected to the light emitting element; one or more second wirings electrically connected to the electronic component; and the side surface portion has a first step portion and a second step portion that is greater in height from the bottom surface than the first step portion as a step portion configured between an inner side surface and an upper surface, one or more first wiring regions are provided in the first step portion; one or more second wiring regions are provided in the second step portion; one end of the first wiring is joined to one of the first wiring region and the second wiring region, and one end of the second wiring is joined to the other of the first wiring region and the second wiring region; A light emitting device in which the other end of the first wiring and the second wiring that is joined to the first wiring region is joined at a position lower in height from the bottom surface than the other end of the wiring that is joined to the second wiring region.

2. an inner surface of the first step portion intersects with the bottom surface; The light emitting device according to claim 1 , wherein an inner side surface of the second step portion intersects with the bottom surface.

3. 3. The light-emitting device according to claim 1, wherein the length of the portion where the inner surface of the second step portion intersects with the bottom surface is longer than the length of the portion where the inner surface of the second step portion intersects with the top surface of the first step portion.

4. The light emitting device according to claim 1 , wherein the base is formed by integrating a bottom surface portion constituting the bottom surface and the side surface portion.

5. The base portion has a bottom surface portion constituting the bottom surface and the side surface portion, The light emitting device according to claim 1 , wherein the bottom surface portion has a higher thermal conductivity than the side surface portion.

6. The light emitting device according to claim 1 , wherein the electronic component is irradiated with a major portion of the light emitted from the light emitting element.

7. The light emitting device according to claim 6 , wherein the electronic component causes at least 80% of the main portion of light emitted in a predetermined direction from the light emitting element to travel in a direction different from the predetermined direction.

8. The light emitting device according to claim 1 , wherein the electronic component is a MEMS or a photodiode.

9. 9. The light emitting device according to claim 1, wherein a surface of the electronic component onto which the light emitted from the light emitting element is irradiated is inclined at an angle of 10 degrees to 80 degrees with respect to the bottom surface.

10. 10. The light-emitting device according to claim 1, wherein the other end of the first wiring and the second wiring joined to the second wiring region is positioned at a higher height from the bottom surface than the first wiring region.

11. the one or more first wirings are joined to the first wiring region; The light emitting device according to claim 1 , wherein the one or more second wirings are joined to the second wiring region.

12. The light emitting device according to claim 1 , wherein the other end of the one or more first wirings is bonded to an upper surface of the light emitting element or an upper surface of a submount on which the light emitting element is disposed.

13. 13. The light-emitting device according to claim 1, wherein the inner surface of the second step portion is formed on one of two surface areas that face each other and sandwich the light-emitting element and the electronic component in series, and the distance to the electronic component is shorter than the distance to the light-emitting element.

14. The light emitting device according to claim 13 , wherein the inner side surface of the first step portion is formed in two surface regions that face each other with the light emitting element and the electronic component sandwiched in parallel.

15. The light-emitting device of claim 14, wherein the inner surface of the first step portion is not formed on one of two surface areas that face each other and sandwich the light-emitting element and the electronic component in series, and the distance to the electronic component is shorter than the distance to the light-emitting element.

16. The light-emitting device described in claim 15, wherein the inner surface of the first step portion is formed on one of two surface areas that face each other and sandwich the light-emitting element and the electronic component in series, and the distance to the electronic component is longer than the distance to the light-emitting element.

17. a support base disposed on a bottom surface of the base and having an inclined surface inclined relative to the bottom surface; The light emitting device according to claim 1 , wherein the electronic component is disposed on an inclined surface of the support base.

18. The light emitting device according to claim 1 , further comprising a lid member bonded to an upper surface of the base located above the second step portion, hermetically sealing a space in which the light emitting element is disposed.

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