Phase shifter and antenna device

Abstract

To provide a phase shifter capable of achieving continuous phase shift variation with a stable phase shift amount.SOLUTION: The phase shifter includes a 90-degree hybrid circuit having two reflection ends, variable stubs each having a line formation layer formed by vanadium dioxide, the variable stubs each extended from each of the two reflection ends, and a ground pattern on which grooves are formed on which variable stubs are disposed, the ground pattern being connected to a side end of each of the variable stubs disposed on each of the grooves.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a phase shifter and an antenna device. [Background technology]

[0002] Antenna devices compatible with high-frequency radio waves are being developed for mobile communications beyond the fifth generation. One example of such an antenna device is a phased array antenna composed of multiple antenna elements. A phased array antenna can form a beam with the desired directionality by changing the excitation phase of the antenna elements using a phase shifter mounted in front of the antenna elements. For example, a switched-line phase shifter can cover a phase shift range of up to 360 degrees, thereby achieving a large scanning angle. However, it is difficult to incorporate such a phase shifter into a compact antenna device with multiple patch antennas.

[0003] Patent Document 1 discloses a reflective variable phase shifter designed to continuously change the phase. The variable phase shifter in Patent Document 1 includes a 90-degree hybrid circuit, a pair of switches, a pair of first variable reactance elements, a pair of first stubs, and a pair of second variable reactance elements. The 90-degree hybrid circuit has a first port, a second port, a third port, and a fourth port. In response to a signal input from the first port, the 90-degree hybrid circuit outputs signals to the second and third ports with a phase difference of 90 degrees, but does not output any signal to the fourth port. A switch is provided at each of the second and third ports. The first variable reactance element is connected to each of the pair of switches. The switch is connected to one end of the first stub. The second variable reactance element is connected to the other end of the first stub. The switch switches between connection with the first variable reactance element and connection with one end of the first stub. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2019-029722 Summary of the Invention [Problem to be solved by the invention]

[0005] According to the variable phase shifter of Patent Document 1, the amount of phase shift can be changed by switching the connections between the second and third ports of the 90-degree hybrid circuit and the variable reactance element and stub. According to the variable phase shifter of Patent Document 1, continuous phase shift can be achieved by applying a reverse voltage to the variable reactance element to continuously change its capacitance. However, with the variable phase shifter of Patent Document 1, it is necessary to precisely control the reverse voltage applied to the variable reactance element, making it difficult to obtain a stable amount of phase shift.

[0006] An object of the present disclosure is to provide a phase shifter and an antenna device that can achieve continuous phase change with a stable phase shift amount. [Means for solving the problem]

[0007] A phase shifter according to one embodiment of the present disclosure includes a 90-degree hybrid circuit having two reflecting ends, a variable stub having a line forming layer made of vanadium dioxide and extending from each of the two reflecting ends, and a ground pattern having a groove in which the variable stub is disposed and connected to a side end of the variable stub disposed in the groove. [Effects of the Invention]

[0008] According to the present disclosure, it is possible to provide a phase shifter and an antenna device that can achieve continuous phase change with a stable phase shift amount. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a conceptual diagram illustrating an example of the configuration of a phase shifter according to the present disclosure. [Figure 2] 1 is a conceptual diagram for explaining an example of a 90-degree hybrid circuit according to the present disclosure. FIG. [Figure 3] FIG. 2 is a schematic diagram showing an enlarged portion of a variable stub according to the present disclosure. [Figure 4] 1 is a conceptual diagram for explaining the configuration of a variable stub according to the present disclosure. [Figure 5] FIG. 1 is a conceptual diagram illustrating an example of a configuration of a variable stub according to the present disclosure. [Figure 6] FIG. 1 is a conceptual diagram illustrating an example of a configuration of a variable stub according to the present disclosure. [Figure 7] FIG. 1 is a conceptual diagram showing an example of a circuit configuration of a heat generation drive circuit according to the present disclosure. [Figure 8] 1 is a block diagram illustrating an example of the configuration of an antenna device including a phase shifter according to the present disclosure. [Figure 9] 1 is a conceptual diagram showing an example in which a conductive portion (line) is formed in a variable stub according to the present disclosure. [Figure 10] 1 is an enlarged conceptual diagram of a conductive portion (line) formed in a variable stub according to the present disclosure. [Figure 11] 1 is an enlarged conceptual diagram of a conductive portion (line) formed in a variable stub according to the present disclosure. [Figure 12] 1 is a conceptual diagram showing an example of a cross section of a conductive portion (line) formed in an extended line region of a variable stub according to the present disclosure. [Figure 13] 1 is a conceptual diagram showing an example of a cross section of a conductive portion (line) formed in a variable stub in a ground line region according to the present disclosure. [Figure 14] 1 is a conceptual diagram illustrating an example of a conductor pattern formed on a variable stub according to the present disclosure. [Figure 15] 1 is a conceptual diagram illustrating an example of a conductor pattern formed on a variable stub according to the present disclosure. [Figure 16] 1 is a conceptual diagram illustrating an example of a conductor pattern formed on a variable stub according to the present disclosure. [Figure 17] 10 is an example of a table used to select a conductor pattern to be formed on a variable stub according to the present disclosure. [Figure 18] FIG. 1 is a conceptual diagram illustrating an example of the configuration of a phase shifter according to the present disclosure. [Figure 19]FIG. 1 is a conceptual diagram illustrating an example of the configuration of a phase shifter according to the present disclosure. [Figure 20] FIG. 1 is a conceptual diagram illustrating an example of the configuration of a phase shifter according to the present disclosure. [Figure 21] FIG. 1 is a conceptual diagram illustrating an example of the configuration of a phase shifter according to the present disclosure. [Figure 22] FIG. 1 is a conceptual diagram illustrating an example of the configuration of a phase shifter according to the present disclosure. [Figure 23] 1 is a conceptual diagram illustrating an example of the configuration of an antenna device according to the present disclosure. [Figure 24] 1 is a conceptual diagram illustrating an example of the configuration of an antenna device according to the present disclosure. [Figure 25] 1 is a conceptual diagram illustrating an example of a matrix circuit formed on the upper surface of a substrate according to the present disclosure. [Figure 26] 1 is a conceptual diagram illustrating an example of the configuration of an antenna device according to the present disclosure. [Figure 27] 1 is a block diagram illustrating an example of a functional configuration of an antenna device according to the present disclosure. [Figure 28] FIG. 1 is a conceptual diagram illustrating an example of the configuration of a phase shifter according to the present disclosure. [Figure 29] FIG. 2 is a block diagram illustrating an example of a hardware configuration for executing control according to the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. In this disclosure, the drawings used in describing each embodiment relate to one or more embodiments. Furthermore, elements included in each drawing may apply to one or more embodiments. The embodiments described below are limited to technically preferable aspects for carrying out the present disclosure, but do not limit the scope of the disclosure to the following. In all drawings used in describing the following embodiments, similar parts are designated by the same reference numerals unless otherwise specified. In the following embodiments, repeated explanations of similar configurations and operations may be omitted.

[0011] (First embodiment) First, a phase shifter according to a first embodiment will be described with reference to the drawings. For example, the phase shifter according to this embodiment is mounted in an antenna device including a patch antenna, which is a type of planar antenna. The phase shifter according to this embodiment can be applied to transmitting radio waves to be transmitted and receiving radio waves to be received that arrive from the outside. For example, the phase shifter according to this embodiment can be applied to an antenna device used for transmitting and receiving signals to be transmitted and received in the high frequency bands used in mobile communications from fifth generation mobile communications onward. Hereinafter, the electrical length of the signals to be transmitted and received on the board will be represented as λ (λ is a real number).

[0012] (composition) 1 is a conceptual diagram showing an example of the configuration of a phase shifter according to the present disclosure. Phase shifter 10 includes 90-degree hybrid circuit 11, ground pattern 12, and variable stubs 13A and 13B. Variable stubs 13A and 13B have the same configuration. Hereinafter, when there is no need to distinguish between variable stubs 13A and 13B, they will be referred to as variable stubs 13.

[0013] The 90-degree hybrid circuit 11 is a 90-degree hybrid circuit including four transmission lines. Each of the four transmission lines forms one side of a rectangle. A port is formed at each vertex of the rectangle formed by the four transmission lines included in the 90-degree hybrid circuit 11. The 90-degree hybrid circuit 11 has a first port P1, a second port P2, a third port P3, and a fourth port P4. The first port P1 is an input end. A signal to be phase-shifted is input to the first port P1. The second port P2 is a reflection end (also referred to as a first reflection end). A variable stub 13A is connected to the second port P2. The third port P3 is a reflection end (also referred to as a second reflection end). A variable stub 13B is connected to the third port P3. The fourth port P4 is an output end. A phase-shifted signal is output from the fourth port P4.

[0014] 2 is a conceptual diagram for explaining a 90-degree hybrid circuit according to the present disclosure. The 90-degree hybrid circuit 11 includes four transmission lines (R1, R2, R3, R4). The electrical length of each of the four transmission lines (R1, R2, R3, R4) is λ / 4 (90 degrees). FIG. 2 is a conceptual diagram of the 90-degree hybrid circuit according to the present disclosure, and does not accurately represent the structure of the 90-degree hybrid circuit.

[0015] The transmission line R1 has an electrical length of λ / 4. The characteristic impedance of the transmission line R1 is Z0 / √2. A first end of the transmission line R1 is connected to a first port P1 (input end). The first end of the transmission line R1 is also connected to a first end of the transmission line R2. A second end of the transmission line R1 is connected to a first end of the transmission line R4. The second end of the transmission line R1 is also connected to a second port P2. A variable stub 13A is connected to the second port P2.

[0016] The transmission line R2 has an electrical length of λ / 4. The characteristic impedance of the transmission line R2 is Z0. A first end of the transmission line R2 is connected to a first port P1 (input end). The first end of the transmission line R2 is also connected to a first end of the transmission line R1. A second end of the transmission line R2 is connected to a fourth port P4 (output end). The second end of the transmission line R2 is also connected to a first end of the transmission line R3.

[0017] The transmission line R3 has an electrical length of λ / 4. The characteristic impedance of the transmission line R2 is Z0 / √2. The first end of the transmission line R3 is connected to a fourth port P4 (output end). The first end of the transmission line R3 is connected to a second end of the transmission line R2. The second end of the transmission line R3 is connected to a second end of the transmission line R4. The second end of the transmission line R3 is connected to a third port P3. A variable stub 13B is connected to the third port P3.

[0018] The transmission line R4 has an electrical length of λ / 4. The characteristic impedance of the transmission line R4 is Z0. A first end of the transmission line R4 is connected to a second end of the transmission line R1. The first end of the transmission line R4 is also connected to a second port P2. One end of a variable stub 13A is connected to the second port P2. The second end of the transmission line R4 is connected to a second end of the transmission line R3. The second end of the transmission line R4 is also connected to a third port P3. The third port P3 is connected to a variable stub 13B.

[0019] The ground pattern 12 is a pattern made of a conductor. For example, the material of the ground pattern 12 is a metal (including an alloy) such as copper, aluminum, or chromium. The ground pattern 12 is electrically connected to a housing or the like that is set to a ground potential. The potential of the ground pattern 12 is the ground potential. A pair of grooves is formed in the ground pattern 12. The pair of grooves formed in the ground pattern 12 have shapes that extend from the second port P2 and the third port P3 of the 90-degree hybrid circuit 11. Variable stubs 13A and 13B are respectively arranged in the pair of grooves formed in the ground pattern 12. Variable stubs 13A and 13B are arranged inside the pair of grooves formed in the ground pattern 12 so as to contact the ground pattern 12.

[0020] Variable stub 13A and variable stub 13B are stubs that have a line-forming layer made of vanadium dioxide VO2. Variable stub 13A and variable stub 13B are stubs whose line length can be changed by utilizing the phase transition of vanadium dioxide VO2 between the insulating phase and the metallic phase. The vanadium dioxide VO2 contained in the line-forming layer is an insulating layer at temperatures lower than the phase transition temperature T. The vanadium dioxide VO2 contained in the insulating line-forming layer undergoes a phase transition from the insulating phase to the metallic phase when the temperature exceeds the phase transition temperature T. The line length of variable stub 13 changes depending on the state of the phase transition of vanadium dioxide VO2 that constitutes variable stub 13.

[0021] Variable stub 13A is disposed inside one of the grooves (upper side in FIG. 1) formed in ground pattern 12. A first end of variable stub 13A is connected to second port P2 of 90-degree hybrid circuit 11. That is, the first end of variable stub 13A is connected to a second end of transmission line R1 and a first end of transmission line R4 via second port P2. A side end of variable stub 13A is connected to ground pattern 12. The second end of variable stub 13A may or may not be connected to ground pattern 12.

[0022] Variable stub 13B is disposed inside the other groove (the lower side in FIG. 1) formed in ground pattern 12. A first end of variable stub 13B is connected to third port P3 of 90-degree hybrid circuit 11. That is, the first end of variable stub 13B is connected to the second end of transmission line R3 and the second end of transmission line R4 via third port P3. A side end of variable stub 13B is connected to ground pattern 12. A second end of variable stub 13B may or may not be connected to ground pattern 12.

[0023] FIG. 3 is a conceptual diagram showing an enlarged portion of a variable stub according to the present disclosure. Variable stub 13 includes an extension line region A1 and a ground line region A2. Extension line region A1 is a region where a line extending from the reflection end of 90-degree hybrid circuit 11 is formed. The line length of variable stub 13B is set according to the length of the conductive portion formed in extension line region A1. Ground line region A2 is a region where a line that grounds the line extended in extension line region A1 to ground pattern 12 is formed. By grounding the end of the conductive portion formed in extension line region A1 to ground pattern 12 at the portion formed in ground line region A2, variable stub 13 functions as a short stub. For example, variable stub 13 can also function as an open stub without grounding the end of the conductive portion formed in extension line region A1.

[0024] [Variable stub] FIG. 4 is a conceptual diagram illustrating the configuration of a variable stub according to the present disclosure. FIG. 4 shows the line forming layer, heat generating drive circuit, and heat generating element that constitute the variable stub. The heat generating drive circuits 131 and the heat generating elements 132 are arranged in a two-dimensional array. Each heat generating element 132 is associated with one heat generating drive circuit 131. The heat generated by the heat generating element 132 is controlled via wiring L connected to the associated heat generating drive circuit 131. The line forming layer 133 is disposed above the heat generating drive circuit 131 and the heat generating element 132. While FIG. 4 illustrates the line forming layer 133 as being located below the heat generating drive circuit 131 and the heat generating element 132, in reality, the line forming layer 133 is located above the heat generating drive circuit 131 and the heat generating element 132. Also, FIG. 4 shows a contact hole H (framed with a dashed line) in the ground pattern 12. The contact hole H is an opening for electrically connecting the ground pattern 12 and the line forming layer 133.

[0025] 5 and 6 are conceptual diagrams showing an example of the configuration of a variable stub according to the present disclosure. FIG. 5 shows a cross-sectional view of the variable stub taken along the AA section line in FIG. 4. The AA section line is a section line that cuts the variable stub 13 in the short direction (the vertical direction on the paper). The AA section line passes through the heating element 132. FIG. 6 shows a cross-sectional view of the variable stub taken along the BB section line or the CC section line in FIG. 4. The BB section line and the CC section line are section lines that cut the variable stub 13 in the longitudinal direction (the horizontal direction on the paper). The BB section line is a section line that cuts the extension line region A1 at a position that includes the wiring L. The CC section line is a section line that cuts the ground line region A2 at a position that includes the wiring L.

[0026] The variable stub 13 has a plurality of heat generating drive circuits 131, a plurality of heat generating elements 132, and a line forming layer 133. The variable stub 13 is formed on a substrate 140. For example, the substrate 140 is an insulating plate-like member such as glass or epoxy resin. A matrix circuit of thin film transistors (TFTs) including a plurality of heat generating drive circuits 131 and a plurality of wirings L is formed on the upper surface of the substrate 140. The plurality of wirings L electrically connect the heat generating drive circuits 131 and the heat generating elements 132. The line forming layer 133 is formed above the plurality of heat generating elements 132. The substrate 140 and the line forming layer 133 are insulated from each other by a first insulating layer 141. A second insulating layer 142 is formed on the upper surface of the line forming layer 133. A contact hole H is formed in the second insulating layer 142 above the side end of the line forming layer 133. The line forming layer 133 is electrically connected to the ground pattern 12 through a contact hole H.

[0027] The plurality of heat generating drive circuits 131 are formed on the upper surface of the substrate 140. The plurality of heat generating drive circuits 131 are formed in a two-dimensional array when viewed from above on the upper surface of the substrate 140. The plurality of heat generating drive circuits 131 are isolated by a first insulating layer 141. Each of the plurality of heat generating drive circuits 131 is associated with one heat generating element 132. Each of the plurality of heat generating drive circuits 131 is used to control the temperature of the associated heat generating element 132.

[0028] Each of the multiple heating elements 132 is associated with one heat generating drive circuit 131. The heating element 132 is disposed diagonally above the associated heating drive circuit 131. The heating element 132 may be disposed at a position other than diagonally above the associated heating drive circuit 131. The heating element 132 is electrically connected to the associated heating drive circuit 131 via wiring L. A line forming layer 133 is formed on the upper surface of the multiple heating elements 132. The multiple heating elements 132 are isolated by a first insulating layer 141. The multiple heating elements 132 may be isolated by gaps formed in the first insulating layer 141. The heating elements 132 are used to heat the upper line forming layer 133. For example, the heating elements 132 are made of an alloy mainly composed of nickel (Ni) or chromium (Cr). The heating elements 132 may also be made of an alloy mainly composed of chromium (Cr), iron (Fe), and aluminum (Al). There are no particular limitations on the material of the heating elements 132. When a current is supplied, the temperature of the heating element 132 increases. For example, the supply of current to the heating element 132 can be controlled using a thin film transistor (TFT). The heat of the heating element 132 is transferred to the line formation layer 133.

[0029] The line forming layer 133 is disposed above the plurality of heating elements 132. The lower surface of the line forming layer 133 and the upper surfaces of the plurality of heating elements 132 are thermally connected. It is preferable that the lower surface of the line forming layer 133 and the upper surfaces of the plurality of heating elements 132 are in contact with each other. As long as the heat from the heating elements 132 can be transferred to the line forming layer 133 to control the phase transition, another layer may be interposed between the lower surface of the line forming layer 133 and the upper surfaces of the plurality of heating elements 132. The line forming layer 133 is partially heated by the heat generated by the heating elements 132 located below.

[0030] The line formation layer 133 contains vanadium dioxide VO2. An electrically conductive line is formed in the line formation layer 133 due to a phase transition between the insulating phase and the metallic phase of vanadium dioxide VO2. The vanadium dioxide VO2 contained in the line formation layer 133 has a composition that undergoes a phase transition from the insulating phase to the metallic phase at a phase transition temperature T. At temperatures lower than the phase transition temperature T, vanadium dioxide VO2 is in the insulating phase. At temperatures lower than the phase transition temperature T, electricity does not flow through vanadium dioxide VO2. At temperatures higher than the phase transition temperature T, vanadium dioxide VO2 is in the metallic phase. At temperatures higher than the phase transition temperature T, electricity flows through vanadium dioxide VO2. The phase transition of vanadium dioxide VO2 exhibits hysteresis during temperature rise and fall. Therefore, the phase transition between the insulating phase and the metallic phase of vanadium dioxide VO2 is adjusted within a temperature range including the phase transition temperature T.

[0031] For example, the line formation layer 133 may have a line formation layer containing vanadium dioxide VO2 to which no additional element has been added. For example, an additional element may be added to the vanadium dioxide VO2 contained in the line formation layer 133. For example, an additional element may be added to the vanadium dioxide VO2 contained in the line formation layer 133 to lower the phase transition temperature. When an additional element such as tungsten (W), magnesium (Mg), iron (Fe), molybdenum (Mo), fluorine (F), or niobium (Nb) is added, the phase transition temperature of vanadium dioxide VO2 is lowered.

[0032] The first insulating layer 141 is formed on the upper surface of the substrate 140. The first insulating layer 141 covers the sides of the heat generating drive circuit 131 and the heat generating element 132. The line forming layer 133 is disposed above the first insulating layer 141. For example, the first insulating layer 141 is made of a general interlayer insulating material. For example, the first insulating layer 141 is made of an inorganic material such as silicon dioxide. The material of the first insulating layer 141 may also be made of an organic material.

[0033] The second insulating layer 142 is formed above the line forming layer 133. For example, the second insulating layer 142 is made of a general interlayer insulating material. For example, the second insulating layer 142 is made of a material such as silicon dioxide. A contact hole H is formed in the second insulating layer 142 above the side end of the line forming layer 133. The line forming layer 133 and the ground pattern 12 are electrically connected via the contact hole H.

[0034] [Heat generation drive circuit] FIG. 7 is a conceptual diagram showing an example of the circuit configuration of a heat generation drive circuit according to the present disclosure. Heat generation drive circuit 131 includes a transistor S, a transistor D, and a capacitor C. FIG. 7 shows an example in which a heat generation element 132 is realized by a resistive element. The connection relationship between transistor S, transistor D, capacitor C, and heat generation element 132 will be explained below. In the following explanation, parentheses indicate the directions on the paper surface of FIG. 7. Note that FIG. 7 shows an example of the circuit configuration of a heat generation drive circuit according to the present disclosure, and is not intended to limit the circuit configuration of the heat generation drive circuit.

[0035] The transistor S is used to select the heating element 132. The first end (left side) of the diffusion layer of the transistor S is connected to a voltage V data The second end (right side) of the diffusion layer of transistor S is connected to the first electrode (bottom side) of capacitor C and the gate (left side) of transistor D. The gate (top side) of transistor S is connected to the voltage V scan is connected to a source of

[0036] Capacitor C is used to control the voltage applied to the gate of transistor D. The first electrode (bottom) of capacitor C is connected to the second end (right side) of the diffusion layer of transistor S and the gate (left side) of transistor D. The second electrode (top) of capacitor C is connected to the voltage V cap The second electrode (top side) of the capacitor C is connected to a voltage V cap is applied.

[0037] The transistor D is used to control the voltage supplied to the heating element 132. The first end (upper side) of the diffusion layer of the transistor D is connected to the voltage V a The first end (top side) of the diffusion layer of transistor D is connected to the source of voltage V a is applied. A second end (lower side) of the diffusion layer of transistor D is connected to a first electrode (lower side) of heating element 132. A gate (left side) of transistor D is connected to a second end (right side) of the diffusion layer of transistor S and a first end (lower side) of capacitor C.

[0038] The first end (upper side) of the heating element 132 is connected to the second end (lower side) of the diffusion layer of the transistor D. The second end (lower side) of the heating element 132 is connected to the voltage V k The second end (bottom side) of the heating element 132 is connected to a supply of voltage V k A voltage V is applied. scan When the transistor S transitions to the ON state by applying the voltage V data and voltage V cap The difference voltage between V and V is applied to capacitor C. When capacitor C is fully charged, transistor S transitions to the OFF state. After transistor S transitions to the OFF state, capacitor C maintains the voltage, and transistor D continues to remain ON according to that potential. When transistor D is ON, voltage V a and voltage V k A voltage corresponding to the potential difference between the two electrodes and a current corresponding to the resistance value of the heating element 132 flows, causing the heating element 132 to generate heat. The heat generated in the heating element 132 is transferred to the line forming layer 133 that is in thermal contact with the heating element 132.

[0039] 8 is a block diagram showing an example of the configuration of an antenna device including a phase shifter according to the present disclosure. The antenna device 1 includes a phase shifter 10 and a control circuit 17. The control circuit 17 is a circuit that controls the phase shifter 10. For example, the control circuit 17 is implemented by a microcomputer including a processor and a memory. The control circuit 17 controls the heat generation drive circuit 131 included in the variable stub 13 of the phase shifter 10 to control the conductor pattern of the line formation layer 133. The capacitance of the variable stub 13 is adjusted according to the control of the control circuit 17. Note that the control circuit 17 may be configured as a component of the phase shifter 10.

[0040] [Line formation] Next, the line formation control in the variable stub 13 will be described with reference to the drawings. Figures 9 to 13 are conceptual diagrams for explaining an example of line formation control in the variable stub according to the present disclosure.

[0041] FIG. 9 is a conceptual diagram showing an example of a variable stub according to the present disclosure in which a conductive portion (line) is formed. FIG. 9 is a plan view of the variable stub viewed from above. The extension line E and the ground line G are conductive portions formed in the line forming layer 133. The extension line E and the ground line G are indicated by hatching different from that of the non-conductive portions. The extension line E is formed in the extension line region A1. The extension line E extends in the extension line region A1 from the contact point (on the left side of the drawing) with the reflection ends (second port P2 and third port P3) of the 90-degree hybrid circuit 11. The ground line G is formed in the ground line region A2. The ground line G is formed between the end of the extension line E (on the right side of the drawing) and the ground pattern 12. The ground line G electrically connects the end of the extension line E (on the right side of the drawing) and the ground pattern 12.

[0042] 10 and 11 are enlarged conceptual diagrams of the conductive portions (lines) formed in the variable stub according to the present disclosure. 10 and 11 are plan views of the variable stub viewed from above. 11 shows the line-forming layer, heat-generating drive circuit, and heat-generating element that make up the variable stub. 10 and 11 show the heat-generating unit areas in the variable stub 13 as areas separated by dashed lines. One heat-generating element is assigned to each heat-generating unit area.

[0043] FIG. 12 is a conceptual diagram showing an example of a cross section of a conductive portion (line) formed in a variable stub according to the present disclosure in an extended line region. FIG. 12 shows a cross section of the variable stub taken along line BB in FIG. 11. Line BB is a cutting line that cuts the extended line region A1 at a position including the wiring L. FIG. 12 shows multiple heating elements. Heating elements 132-B1, 132-B2, and 132-B3 generate heat up to a temperature exceeding the phase transition temperature of vanadium dioxide VO2 contained in variable stub 13. Heating element 132-B4 does not generate heat. Vanadium dioxide VO2 contained in variable stub 13 located above heating elements 132-B1, 132-B2, and 132-B3 has undergone a phase transition to a metallic phase. Therefore, an extension line E is formed in the variable stub 13 at a position above the heat generating element 132-B1, the heat generating element 132-B2, and the heat generating element 132-B3.

[0044] FIG. 13 is a conceptual diagram showing an example of a cross section of a conductive portion (line) formed in a variable stub according to the present disclosure in a ground line region. FIG. 13 shows a cross section of the variable stub taken along line CC in FIG. 11. Line CC is a cut line that cuts ground line region A2 at a position including wiring L. FIG. 13 shows multiple heating elements. Heating elements 132-C2 and 132-C3 generate heat up to a temperature exceeding the phase transition temperature of vanadium dioxide VO2 contained in variable stub 13. Heating elements 132-C1 and 132-C4 do not generate heat. Vanadium dioxide VO2 contained in variable stub 13 located above heating elements 132-C2 and 132-C3 has undergone a phase transition to a metallic phase. Therefore, a ground line G is formed in variable stub 13 above heating elements 132-C2 and 132-C3.

[0045] 12 and 13, when the multiple heating elements 132 generate heat, an extension line E and a ground line G are formed in the variable stub 13. The ground line G connects the end of the extension line E to the ground pattern 12. As a result, the variable stub 13 functions as a short stub extended by the length of the extension line E. For example, it is possible to form the extension line E without forming the ground line G. In such a case, the variable stub 13 functions as an open stub extended by the length of the extension line E.

[0046] 14 to 16 are conceptual diagrams showing examples of conductor patterns formed in a variable stub according to the present disclosure. FIG. 14 is a conductor pattern in which the extension line E is minimized and the extension line E is grounded via a ground line G. FIG. 14 shows a state in which the line length of variable stub 13 is at its minimum. FIG. 15 is a conductor pattern in which extension line E is extended and grounded via a ground line G. FIG. 16 is a conductor pattern in which the extension line E is maximized and grounded via a ground line G. FIG. 16 shows a state in which the line length of variable stub 13 is at its maximum. As shown in FIGS. 14 to 16, the line length of variable stub 13 can be continuously changed by controlling the phase transition between the insulating layer and the metal phase of vanadium dioxide VO2 contained in line-forming layer 133.

[0047] 17 is an example of a table (phase shift table 130) used to select a conductor pattern to be formed on a variable stub according to the present disclosure. The phase shift table 130 includes a conductor pattern P corresponding to a desired phase shift amount. c is stored. Conductor pattern P c The conductor pattern P c The amount of phase shift 0 corresponds to an address indicating the position of the heating element 132 that generates heat to form the conductive pattern P c1 The phase shift amount 1 / 4λ corresponds to the conductor pattern P c2 The phase shift amount 1 / 2λ corresponds to the conductor pattern P c3 For example, a desired phase shift amount is set via an input device (not shown). The control circuit 17 selects the conductor pattern P corresponding to the set desired phase shift amount. c As a result, the desired phase shift amount is set in the variable stub 13.

[0048] (Variation) Next, modified examples of the phase shifter according to the present disclosure will be described with reference to the drawings. Hereinafter, variations of the line forming layer included in the phase shifter will be shown.

[0049] FIG. 18 is a conceptual diagram showing an example of the configuration of a phase shifter according to Variation 1 of the present disclosure. FIG. 18 is a plan view looking down on the variable stub portion from an upper viewpoint. In the line forming layer 134 of this variation, an isolation opening I is formed in a portion between the extension line region A1 and the ground line region A2. The isolation opening I is an opening that penetrates the line forming layer 134. Because the line forming layer 134 of this variation includes the isolation opening I, heat conduction between the extension line region A1 and the ground line region A2 is reduced. According to this variation, the precision of the width of the extension line E formed in the extension line region A1 is improved.

[0050] FIG. 19 is a conceptual diagram showing an example of the configuration of a phase shifter according to Variation 2 of the present disclosure. FIG. 19 is a plan view looking down on the variable stub portion from an upper viewpoint. In the ground line region A2, the line forming layer 135 is separated into rows (vertical direction on the paper) corresponding to each heating element 132. That is, in the ground line region A2 of the line forming layer 135, portions heated by adjacent heating elements 132 are thermally isolated. On the other hand, in the extension line region A1, the line forming layer 135 is not separated into rows (vertical direction on the paper) corresponding to each heating element 132. According to this variation, the edges (side ends) of the extension line E formed in the extension line region A1 can be set with precision. Furthermore, according to this variation, the edges (side ends) of the ground line G formed in the ground line region A2 can be set with precision.

[0051] 20 and 21 are conceptual diagrams showing an example of the configuration of a phase shifter according to Modification 3 of the present disclosure. FIG. 20 is a plan view looking down on the variable stub portion from an upper viewpoint. FIG. 21 is a cross-sectional view taken along the cutting line DD in FIG. 20. In this modification, a line forming layer 136 including an extension line region A1 where the extension line E is formed and a line forming layer 137 including a ground line region A2 where the ground line G is formed are separated. The line forming layer 136 included in the extension line region A1 and the line forming layer 137 included in the ground line region A2 are electrically connected by a connecting member 125. There are no limitations on the material of the connecting member 125 as long as it is electrically conductive. The connecting member 125 is preferably made of a material with high electrical conductivity and low thermal conductivity. For example, the connecting member 125 may be made of a material containing vanadium dioxide (VO2). In this modification, the line formation layer 136 and the line formation layer 137 are separated from each other, which reduces heat conduction between the extension line region A1 and the ground line region A2. This modification improves the accuracy of the width of the extension line E formed in the extension line region A1.

[0052] FIG. 22 is a conceptual diagram illustrating an example of the configuration of a phase shifter according to Variation 4 of the present disclosure. FIG. 22 is a plan view looking down on the variable stub portion from an upper viewpoint. In the ground line region A2, a line forming layer 138 is formed for each heating element 132. The multiple line forming layers 138 are separated from each other by rows (vertical direction on the paper) corresponding to each heating element 132. That is, in the ground line region A2, the line forming layers 138 heated by adjacent heating elements 132 are thermally isolated. On the other hand, in the extended line region A1, the line forming layers 136 are not separated by rows (vertical direction on the paper) corresponding to each heating element 132. The line forming layers 136 included in the extended line region A1 and the multiple line forming layers 138 included in the ground line region A2 are electrically connected by connecting members 125. As in Variation 3, there are no limitations on the connecting members 125 as long as they are electrically conductive. Since the multiple line forming layers 138 are separated from one another, heat conduction between the extension line region A1 and the ground line region A2 is reduced. According to this modification, the edges (side ends) of the extension line E formed in the extension line region A1 can be set with precision. Furthermore, according to this modification, the edges (side ends) of the ground line G formed in the ground line region A2 can be set with precision.

[0053] As described above, the phase shifter according to this embodiment has a 90-degree hybrid circuit, a ground pattern, and a variable stub. The 90-degree hybrid circuit has two reflecting ends. Two grooves are formed in the ground pattern, in which the variable stubs are disposed. The ground pattern is connected to the side ends of the variable stubs disposed in each of the two grooves. The variable stub has a line forming layer made of vanadium dioxide. One variable stub is disposed in each of the two grooves formed in the ground pattern. The variable stub is connected to each of the two reflecting ends of the 90-degree hybrid circuit. The variable stub extends from each of the two reflecting ends.

[0054] The phase shifter of this embodiment has a line formation layer made of vanadium dioxide. By controlling the temperature, an extension line is formed in the line formation layer according to the insulating phase-metallic phase transition of vanadium dioxide. By controlling the line length of the extension line formed, a continuous phase shift amount can be stably set in the line formation layer. Therefore, the phase shifter of this embodiment can achieve a continuous phase shift change with a stable phase shift amount.

[0055] In one aspect of this embodiment, the variable stub has a plurality of heating elements and a plurality of heating drive circuits. The plurality of heating elements are arranged in an array along one surface of the line formation layer. Each of the plurality of heating drive circuits is arranged corresponding to a respective one of the plurality of heating elements. Each of the plurality of heating elements is thermally connected to the line formation layer. Each of the plurality of heating drive circuits causes the heating element to heat up to a temperature exceeding the phase transition temperature of vanadium dioxide contained in the line formation layer in accordance with the selection of the heating element. According to this aspect, a desired phase shift amount can be set by selecting the heating element in accordance with the phase shift amount.

[0056] In one aspect of this embodiment, the line forming layer includes an extension line region and a ground line region. The extension line region extends from each of the two reflection ends of the 90-degree hybrid circuit. The ground line region connects the extension line region to the ground pattern. According to this aspect, a desired phase shift amount can be set by forming an extension line having a line length corresponding to the phase shift amount in the extension line region of the line forming layer.

[0057] In one aspect of this embodiment, the extension line region is formed with extension lines extending from each of the two reflection ends of the 90-degree hybrid circuit. The ground line region is formed with ground lines that short-circuit the ends of the extension lines formed in the extension line region to the ground pattern. According to this aspect, a desired phase shift amount can be set by forming extension lines with a line length corresponding to the phase shift amount in the extension line region of the line formation layer.

[0058] In one aspect of this embodiment, an extension line having a line length corresponding to a desired amount of phase shift is formed in the extension line region. A ground line connecting the end of the extension line formed in the extension line region to the ground pattern is formed in the ground line region. According to this aspect, a short stub having a line length corresponding to the desired amount of phase shift is formed.

[0059] In one aspect of the present embodiment, the line formation layer has an opening formed between the extension line region and the ground line region. The line formation layer of this aspect has the opening formed between the extension line region and the ground line region, which reduces heat conduction between the extension line region and the ground line region. Therefore, according to this aspect, the precision of the width of the extension line formed in the extension line region is improved.

[0060] In one aspect of this embodiment, the extension line region and the ground line region are separated in the line formation layer. The extension line region and the ground line region are electrically connected by a plurality of connection members arranged corresponding to adjacent heat generating elements in a direction perpendicular to the extension direction. In the line formation layer of this aspect, the extension line region and the ground line region are separated. In the line formation layer of this aspect, heat conduction between the extension line region and the ground line region is reduced. Therefore, according to this aspect, the precision of the width of the extension line formed in the extension line region is improved.

[0061] In one aspect of this embodiment, a phase-shift table in which conductor patterns corresponding to the desired phase shift amount are registered is used to select a heat generating drive circuit that generates heat from a heat generating element used to form an extension line and a ground line corresponding to the conductor pattern corresponding to the desired phase shift amount. The extension line and the ground line corresponding to the conductor pattern set using the phase-shift table are formed on the line formation layer. According to this aspect, the desired phase shift amount can be easily set using the phase-shift table.

[0062] (Second embodiment) Next, an antenna device according to a second embodiment will be described with reference to the drawings. The planar antenna of this embodiment includes a patch antenna, which is a type of planar antenna. In the following, descriptions of a transmitting device that transmits radio waves from the planar antenna and a receiving device that receives radio waves received by the planar antenna will be omitted. For example, the planar antenna of this embodiment is used for transmitting and receiving electromagnetic waves in a high frequency band that is expected to be applied to mobile communications of B5G (Beyond 5th Generation), which follows 5G (5th Generation). For example, the planar antenna of this embodiment is used for transmitting and receiving millimeter wave and terahertz wave signals. Note that the planar antenna of this embodiment may also be used for transmitting and receiving signals other than millimeter wave and terahertz wave signals.

[0063] The antenna device of this embodiment includes the phase shifter according to the first embodiment. For example, the phase shifter is formed using a manufacturing process technology for a micro LED (Light-Emitting Diode) display. The planar antenna of this embodiment includes a switching element formed using a manufacturing process technology for a thin film transistor (TFT). The planar antenna of this embodiment is manufactured by combining a manufacturing process technology for a micro LED display (micro LED process technology) and a manufacturing process technology for a thin film transistor (TFT process technology). Note that the planar antenna of this embodiment may also be manufactured using a technology other than the micro LED process technology and the TFT process technology.

[0064] (composition) Fig. 23 is a conceptual diagram showing an example of the configuration of an antenna device according to the present disclosure. Fig. 23 shows an example of the external appearance of the antenna device. The antenna device 2 includes a planar antenna 200. An antenna array 20 is arranged on the upper surface of the planar antenna 200. The antenna array 20 is composed of a plurality of patch antennas P. The plurality of patch antennas P are arranged in a two-dimensional array. In the example of Fig. 23, the plurality of patch antennas P are arranged along the X direction and the Y direction. The plurality of patch antennas P are arranged in a phased array. That is, the antenna device 2 functions as a phased array antenna.

[0065] The antenna device 2 is mounted with a first drive circuit 271 and a second drive circuit 272. The first drive circuit 271 and the second drive circuit 272 are circuits used to select the patch antenna P to be driven. By driving the first drive circuit 271 and the second drive circuit 272, it is possible to select an address associated with each patch antenna P. The first drive circuit 271 and the second drive circuit 272 may be formed on the surface of the planar antenna 200 or may be formed inside the planar antenna 200.

[0066] Fig. 24 is a conceptual diagram showing an example of the configuration of an antenna device according to the present disclosure. Fig. 24 is a cross-sectional view of the antenna device 2 cut along a cutting line passing through the patch antenna P. The antenna device 2 has the patch antenna P, an insulating layer, a ground layer, a signal line layer, a substrate 220, and a phase shifter forming layer. The insulating layer includes a first insulating layer 241, a second insulating layer 242, a third insulating layer 243, and a fourth insulating layer 244. The ground layer includes a first ground layer 251, a second ground layer 252, and a third ground layer 253. The signal line layer includes a signal line L s1 and signal line L s2 The phase shifter forming layer has a phase shifter 21 formed thereon that corresponds to the patch antenna P. FIG. 24 shows an example in which the signal line layer and the patch antenna P are formed on different layers. The antenna device according to this embodiment may be configured as a coplanar antenna in which the signal line layer and the patch antenna P are formed on the same layer. Note that the third ground layer 253 may not be provided, and the substrate 220 may be disposed at the position of the fourth insulating layer 244.

[0067] The antenna array 20 is disposed on the upper surface of the first insulating layer 241. The antenna array 20 is composed of a plurality of patch antennas P. Although FIG. 24 illustrates a single patch antenna P, the antenna device 2 includes a plurality of patch antennas P. The plurality of patch antennas P are arranged in a lattice pattern along two directions that are orthogonal to each other. The plurality of patch antennas P are arranged in a phased array. The patch antenna P is a plate-shaped radiating element. For example, the patch antenna P is rectangular. The shape of the patch antenna P is not limited to rectangular, and may be circular or another shape.

[0068] The patch antenna P is fed by an electromagnetic coupling feeding method. The patch antenna P is connected to the signal line L formed below the second insulating layer 242 via the slot S0. s2 The patch antenna P and the signal line L are electromagnetically coupled through the slot S0. s2 The patch antenna P is excited by electromagnetic coupling between the signal line L and the slot S0. s2 The impedance can be matched by arranging the open end of the slot S0 and adjusting the dimensions of the slot S0. For example, the shape of the slot S0 is rectangular. For example, the shape of the slot S0 may be a shape other than a rectangle, such as a dogbone shape.

[0069] The patch antenna P has a structure equivalent to a microstrip line with open ends. The resonant frequency of the patch antenna P is an integer multiple of half the wavelength, which corresponds to the length of one side of the patch antenna P. The size of the patch antenna P is set according to the wavelength of the radio waves to be transmitted. Because the patch antenna P is an open-type resonator that resonates at the resonant frequency, its Q value decreases due to radio wave radiation. To avoid this decrease in Q value due to radio wave radiation and enable the patch antenna P to function as a resonator, it is preferable that the dielectric constant of the material of the insulating layer and the substrate 220 be as high as possible. The higher the dielectric constant of the material of the insulating layer and the substrate 220, the more effectively radio wave transmission can be suppressed. If the material of the insulating layer and the substrate 220 is high-dielectric, the thickness of the insulating layer and the substrate 220 and the width of the patch antenna P are set to be sufficiently small compared to the wavelength of the radio waves used in communication. For example, if the material of the insulating layer and the substrate 220 is low-dielectric, a microstrip antenna can be constructed by increasing the thickness of the insulating layer and the width of the patch antenna P relative to the wavelength of the radio waves to be transmitted, thereby increasing the radiation amount.

[0070] It is preferable that the patch antenna P radiates signals (radio waves) easily into space. In contrast, it is preferable that internal wiring such as signal lines and wires radiate signals less easily. In other words, the smaller the dielectric constant required around the patch antenna P, the better, and the larger the dielectric constant required around the internal wiring, the better. Therefore, it is preferable to apply different manufacturing processes to the structure around the patch antenna P and the structure around the internal wiring. For example, the structure of the antenna device 2 of this embodiment can be realized by applying a technique in which the structure around the patch antenna P is formed using a liquid crystal process and the structure around the internal wiring is formed using a thin-film process.

[0071] The first insulating layer 241 forms the surface of the antenna device 2. The first insulating layer 241 is laminated on the upper surface of the first ground layer 251. For example, the material of the first insulating layer 241 is glass, glass epoxy, tetrafluoroethylene, epoxy, etc. As long as it is possible to transmit and receive radio waves for communication, the first insulating layer 241 may be made of a material other than glass, glass epoxy, tetrafluoroethylene, epoxy, etc.

[0072] The first ground layer 251 is laminated on the upper surface of the second insulating layer 242. The first insulating layer 241 is laminated on the upper surface of the first ground layer 251. For example, the material of the first ground layer 251 is a metal (including alloys) such as copper, aluminum, or chromium. The potential of the first ground layer 251 is the ground potential. An opening is formed in the first ground layer 251. The opening formed in the first ground layer 251 is called a slot S0. The slot S0 is formed below the patch antenna P. Directly below the slot S0, a signal line L s2 The signal line L s2 The signal propagating through the signal line L s2 and the patch antenna P, the electromagnetic coupling EC between the patch antenna P and the ground wave propagates to the patch antenna P.

[0073] The second insulating layer 242 is formed above the signal line layer. A first ground layer 251 is formed on the upper surface of the second insulating layer 242. An opening (air gap) may be formed in the portion of the second insulating layer 242 below the patch antenna P. When the air gap is formed, the signal line L s2 The dielectric constant between the signal line L and the patch antenna P decreases. s2 An air gap may be formed to reduce the dielectric constant between the patch antenna P and the second insulating layer 242. For example, the material of the second insulating layer 242 may be glass, glass epoxy, tetrafluoroethylene, epoxy, or the like. As long as the second insulating layer 242 is capable of transmitting and receiving radio waves for communication, it may be made of a material other than glass, glass epoxy, tetrafluoroethylene, or epoxy.

[0074] The signal line layer is formed on the upper surface of the third insulating layer 243. The second insulating layer 242 is laminated on the upper surface of the signal line layer. s1 and signal line L s2 Signal line L s1 (first signal line) is connected to a signal source (not shown). s1 The signal transmitted from the signal source propagates through the signal line L. s1 The signal before phase shift propagates through the signal line L. s2The signal line L (second signal line) is extended to pass under the slot S0 of the first ground layer 251. s2 A capacitance is formed between the signal line L and the patch antenna P according to the dielectric constants of the first insulating layer 241 and the second insulating layer 242. s2 The signal whose phase has been shifted by the phase shifter 21 is propagated to the patch antenna P by electromagnetic coupling EC via the slot S0.

[0075] The third insulating layer 243 is formed above the second ground layer 252. A signal line layer is formed on the upper surface of the third insulating layer 243. For example, the material of the third insulating layer 243 is glass, glass epoxy, tetrafluoroethylene, epoxy, or the like. As long as the third insulating layer 243 is capable of transmitting and receiving radio waves for communication, it may be made of a material other than glass, glass epoxy, tetrafluoroethylene, or epoxy.

[0076] The second ground layer 252 is laminated on the upper surface of the fourth insulating layer 244. The second insulating layer 242 is laminated on the upper surface of the second ground layer 252. For example, the material of the second ground layer 252 is a metal (including alloys) such as copper, aluminum, or chromium. The potential of the second ground layer 252 is the ground potential. Two types of openings are formed in the second ground layer 252. The two types of openings formed in the second ground layer 252 are called slots S1 and slots S2. The slots S1 are for connecting the signal line L s1 and the phase shifter 21. The slot S2 is s2 and the phase shifter 21. s1 A capacitance is formed between the signal line L and the phase shifter 21 according to the dielectric constants of the third insulating layer 243 and the fourth insulating layer 244. Similarly, s2 Between the signal line L and the phase shifter 21, a capacitance is formed according to the dielectric constants of the third insulating layer 243 and the fourth insulating layer 244. s1 The signal propagating through the signal line L is propagated to the phase shifter 21 by electromagnetic coupling EC via the slot S1. The signal propagating through the phase shifter 21 is phase-shifted by the phase shift amount set in the phase shifter 21, and is then coupled to the signal line L by electromagnetic coupling EC via the slot S2. s2 propagates to.

[0077] The fourth insulating layer 244 is formed above the phase shifter-forming layer. A second ground layer 252 is formed on the upper surface of the fourth insulating layer 244. For example, the material of the fourth insulating layer 244 is glass, glass epoxy, tetrafluoroethylene, epoxy, or the like. As long as the fourth insulating layer 244 is capable of transmitting and receiving radio waves for communication, the fourth insulating layer 244 may be made of a material other than glass, glass epoxy, tetrafluoroethylene, or epoxy.

[0078] A phase shifter 21 is formed on the phase shifter forming layer for each patch antenna P. The phase shifter forming layer is formed on the upper surface of the substrate 220. A fourth insulating layer 244 is formed on the upper surface of the phase shifter forming layer. Two types of openings (slots S1 and S2) are formed in the second ground layer 252 above the phase shifter 21. A signal line L is formed above the phase shifter 21 via the slot S1. s1 Above the phase shifter 21 via the slot S2, a signal line L s2 The signal line L s1 The signal propagating through the signal line L is propagated to the phase shifter 21 by electromagnetic coupling EC via the slot S1. The signal propagating through the phase shifter 21 is phase-shifted by the phase shift amount set in the phase shifter 21, and is then coupled to the signal line L by electromagnetic coupling EC via the slot S2. s2 propagates to.

[0079] The substrate 220 is disposed below the phase shifter formation layer. A matrix circuit, TFT wiring, and phase shifters 21 are formed on the upper surface of the substrate 220. The matrix circuit has a structure in which a plurality of thin film transistors (TFTs) are arranged in a two-dimensional array. For example, the TFTs included in the matrix circuit are formed using TFT process technology. The TFT wiring includes a plurality of selection lines used to select the phase shifters 21 and a plurality of data lines used to write phase shift data to the phase shifters 21. For example, the material of the substrate 220 is glass, glass epoxy, tetrafluoroethylene, epoxy, or the like. As long as the substrate 220 is capable of transmitting and receiving radio waves for communication, it may be made of a material other than glass, glass epoxy, tetrafluoroethylene, epoxy, or other resin.

[0080] 25 is a conceptual diagram showing an example of a matrix circuit formed on the upper surface of a substrate according to the present disclosure. FIG. 25 is a plan view of the surface on which the matrix circuit is formed, viewed from above. TFT wiring is formed in the phase shifter formation layer. The TFT wiring is a selection line group G including a plurality of selection lines. Ls and a data line group G consisting of a plurality of data lines. Ld Each of the multiple selection lines included in the selection line group GLs is used to select the phase shifter 21. Ld Each of the plurality of data lines included in the group G is used to propagate a signal emitted through the phase shifter 21. The TFT wiring includes a group of selection lines G Ls and data line group G Ld Other wiring may also be included.

[0081] A third ground layer 253 is disposed on the lower surface of the substrate 220. The third ground layer 253 is made of a conductor. For example, the material of the third ground layer 253 is a metal (including alloys) such as copper, aluminum, or chromium. The potential of the third ground layer 253 is a ground potential. Therefore, a capacitance according to the dielectric constant of the substrate 220 is formed between the phase shifter 21 and the third ground layer 253.

[0082] From the signal source (not shown) to the signal line L s1 The signal supplied to the phase shifter 21 is propagated to the phase shifter 21 by electromagnetic coupling via the slot S1. The signal propagated to the phase shifter 21 is phase-shifted according to the phase shift amount set in the phase shifter 21. The phase-shifted signal is then transmitted from the phase shifter 21 to the signal line L by electromagnetic coupling via the slot S2. s2 The signal whose phase has been shifted by the phase shifter 21 propagates to the signal line L s2 The signal that has reached the area below the patch antenna P propagates along the signal line L due to electromagnetic coupling via the slot S0. s2 The signal propagates from the patch antenna P to the patch antenna P. The signal propagated to the patch antenna P is transmitted as a radio signal from a phased array antenna made up of multiple patch antennas P.

[0083] Fig. 26 is a conceptual diagram showing an example of the configuration of an antenna device according to the present disclosure. The antenna device shown in Fig. 26 differs from the antenna device shown in Fig. 24 in that a fourth ground layer is formed in the same layer as the phase shifter-forming layer. The fourth ground layer 254 is electrically connected to the third ground layer 253 by a plurality of vias 255 that penetrate the fourth insulating layer 244. The plurality of vias 255 are formed inside through holes that penetrate the fourth insulating layer 244. The fourth ground layer 254 is grounded to the same potential as the third ground layer 253 by the plurality of vias 255. Compared to the configuration of Fig. 24, the configuration of Fig. 26 allows for more reliable grounding within the antenna device.

[0084] 27 is a block diagram showing an example of the functional configuration of an antenna device according to the present disclosure. The antenna device 2 includes an antenna array 20, a phase shifter 21, a matrix circuit 22, a control circuit 28, and a signal source 29.

[0085] The matrix circuit 22 has a configuration in which a plurality of thin film transistors (TFTs) are arranged in a two-dimensional array. The matrix circuit 22 is formed using TFT process technology. Each of the plurality of TFTs included in the matrix circuit 22 corresponds to one of the plurality of patch antennas P included in the antenna array 20. For example, the TFT includes a semiconductor layer such as amorphous silicon or polysilicon. Each of the plurality of pixels formed in the matrix circuit 22 corresponds to a patch antenna P.

[0086] A phase shifter 21 is disposed for each antenna unit. The phase shifter 21 is the phase shifter 10 according to the first embodiment. The phase shifter 21 is associated with the patch antenna P. A heat generating drive circuit (not shown) included in the phase shifter 21 is associated with each of the plurality of pixels formed in the matrix circuit 22. A heat generating element (not shown) included in the phase shifter 21 generates heat in accordance with the selection of the heat generating drive circuit. An extension line having a line length according to the desired phase shift amount is set in a line forming layer (not shown) included in the phase shifter 21. The line length of the extension line is adjusted according to the set conductor pattern. As a result, a phase shift amount according to the line length of the extension line is set in the phase shifter 21.

[0087] The drive circuit 27 includes a first drive circuit 271 and a second drive circuit 272. The first drive circuit 271 is a circuit for performing addressing in the X direction. The second drive circuit 272 is a circuit for performing addressing in the Y direction. The drive circuit 27 drives the TFTs included in the matrix circuit 22 in accordance with the control of the control circuit 28. The drive circuit 27 individually drives the multiple TFTs included in the matrix circuit 22.

[0088] The control circuit 28 drives the drive circuit 27 in response to an external control signal. The control circuit 28 drives the drive circuit 27 by an active matrix drive method. The control circuit 28 drives the first drive circuit 271 and the second drive circuit 272 in conjunction with each other to designate an address associated with each patch antenna P. The control circuit 28 also outputs the external control signal to the signal source 29.

[0089] For example, the control circuit 28 is realized by a microcomputer (also called a microcomputer) or a microcontroller. For example, the control circuit 28 includes a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), flash memory, etc. The control circuit 28 executes control and processing according to a pre-stored program. The control circuit 28 executes control and processing according to the program in accordance with a pre-set schedule, timing, external control instructions, etc. For example, the control circuit 28 controls the antenna array 20 composed of multiple patch antennas P included in the planar antenna 200 to transmit directional radio waves from the antenna array 20. In this way, the antenna array 20 is used as a phased array antenna.

[0090] The signal source 29 is connected to the phase shifter 21 via a signal line. The signal source 29 is also connected to the control circuit 28. The signal source 29 sends a signal to the phase shifter 21 in accordance with the control of the control circuit 28. The signal source 29 may be configured to receive a signal from outside without passing through the control circuit 28.

[0091] A signal that reaches the signal input section of the phase shifter 21 through a signal line (not shown) connected to an ON-state TFT is phase-shifted by the phase shift amount set in the phase shifter 21. The phase-shifted signal propagates from the signal line to the patch antenna P by electromagnetic coupling. Radio waves derived from the signal propagated to the patch antenna P are transmitted from the patch antenna P. The radio waves transmitted from the patch antenna P are based on a signal output from a transmission circuit (not shown). There are no particular limitations on the information contained in the signal.

[0092] Furthermore, the radio waves received by the patch antenna P are received according to a capacitance based on the dielectric constant of a dielectric such as an insulating layer or a TFT substrate interposed between the patch antenna P and the signal line. The phase of the received radio waves is shifted by the phase shift amount set in the phase shifter 21. The phase-shifted signal is received by a receiving circuit (not shown) through the signal line. Information contained in the signal received by the receiving circuit is decoded by a decoder (not shown).

[0093] As described above, the antenna device of this embodiment includes the phase shifter of the first embodiment and an antenna array in which a plurality of patch antennas are arranged in a two-dimensional array. The phase shifters are arranged in correspondence with each of the plurality of patch antennas.

[0094] The antenna device of this embodiment includes a phase shifter having a line formation layer made of vanadium dioxide. By controlling the temperature, an extended line having a line length corresponding to the insulating-metallic phase transition of vanadium dioxide is formed in the line formation layer. By controlling the line length of the extended line thus formed, a continuous phase shift amount can be stably set in the line formation layer. The multiple phase shifters included in the antenna device of this embodiment achieve continuous phase shift changes with stable phase shift amounts. An arbitrary phase shift amount can be set in each of the multiple patch antennas. Therefore, the antenna device of this embodiment can realize a phased array antenna capable of transmitting directional radio waves in any direction.

[0095] (Third embodiment) Next, a phase shifter according to a third embodiment will be described with reference to the drawings. The phase shifter of this embodiment has a simplified configuration of the phase shifter of the first embodiment.

[0096] 28 is a conceptual diagram showing an example of the configuration of a phase shifter according to the present disclosure. A phase shifter 30 includes a 90-degree hybrid circuit 31, a ground pattern 32, and a variable stub 33.

[0097] The 90-degree hybrid circuit 31 has two reflecting ends. A groove in which the variable stub 33 is placed is formed in the ground pattern 32, and the ground pattern 32 is connected to the side end of the variable stub 33 placed in the groove. The variable stub 33 has a line forming layer made of vanadium dioxide, and extends from each of the two reflecting ends.

[0098] The phase shifter of this embodiment has a line formation layer made of vanadium dioxide. By controlling the temperature, an extended line having a line length corresponding to the insulating phase-metallic phase transition of vanadium dioxide is formed in the line formation layer. By controlling the line length of the extended line formed, a continuous phase shift amount can be stably set in the line formation layer. Therefore, the phase shifter of this embodiment can achieve a continuous phase shift change with a stable phase shift amount.

[0099] (Hardware) Next, a hardware configuration for executing the control and processing in the present disclosure will be described with reference to the drawings. Here, an information processing device 90 (computer) in Fig. 29 is given as an example of such a hardware configuration. The information processing device 90 in Fig. 29 is an example of a configuration for executing the control and processing in the present disclosure and does not limit the scope of the present disclosure.

[0100] 29, an information processing device 90 includes a processor 91, a memory 92, an auxiliary storage device 93, an input / output interface 95, and a communication interface 96. In FIG. 29, interface is abbreviated as I / F (Interface). The processor 91, memory 92, auxiliary storage device 93, input / output interface 95, and communication interface 96 are connected to each other via a bus 98 so as to be able to communicate data with each other. The processor 91, memory 92, auxiliary storage device 93, and input / output interface 95 are also connected to a network such as the Internet or an intranet via the communication interface 96.

[0101] The processor 91 loads a program (instructions) stored in an auxiliary storage device 93 or the like into the memory 92. For example, the program is a software program for executing the control and processing in the present disclosure. The processor 91 executes the program loaded into the memory 92. The processor 91 executes the program to execute the control and processing in the present disclosure.

[0102] The memory 92 is a storage device having an area in which a program is loaded. The processor 91 loads a program stored in an auxiliary storage device 93 or the like into the memory 92. The memory 92 is realized by a volatile memory such as a DRAM (Dynamic Random Access Memory). Alternatively, a non-volatile memory such as an MRAM (Magnetoresistive Random Access Memory) may be used as the memory 92.

[0103] The auxiliary storage device 93 stores various data such as programs. For example, the auxiliary storage device 93 is realized by a local disk such as a hard disk or flash memory. Note that it is also possible to configure the system so that various data is stored in the memory 92, and omit the auxiliary storage device 93.

[0104] The input / output interface 95 is an interface for connecting the information processing device 90 to peripheral devices based on standards and specifications. The communication interface 96 is an interface for connecting to external systems and devices via a network such as the Internet or an intranet based on standards and specifications. The input / output interface 95 and the communication interface 96 may be a common interface for connecting to external devices.

[0105] Input devices such as a keyboard, mouse, and touch panel may be connected to the information processing device 90 as needed. These input devices are used to input information and settings. When a touch panel is used as the input device, a screen having the function of the touch panel serves as the interface. The processor 91 and the input devices are connected via an input / output interface 95.

[0106] The information processing device 90 may be equipped with a display device for displaying information. When a display device is equipped, the information processing device 90 is equipped with a display control device (not shown) for controlling the display of the display device. The information processing device 90 and the display device are connected via an input / output interface 95.

[0107] The information processing device 90 may be equipped with a drive device. The drive device acts as an intermediary between the processor 91 and a recording medium (program recording medium) to read data and programs stored on the recording medium and to write processing results of the information processing device 90 to the recording medium. The information processing device 90 and the drive device are connected via an input / output interface 95.

[0108] The above is an example of a hardware configuration for enabling the control and processing in the present disclosure. The hardware configuration in Figure 29 is an example of a hardware configuration for executing the control and processing in the present disclosure, and does not limit the scope of the present disclosure. A program that causes a computer to execute the control and processing in the present disclosure is also included in the scope of the present disclosure.

[0109] A program recording medium on which a program for executing the processing in this embodiment is recorded is also included in the scope of the present invention. For example, the program recording medium is a computer-readable non-transitory recording medium. The recording medium can be realized as an optical recording medium such as a CD (Compact Disc) or a DVD (Digital Versatile Disc). The recording medium may also be realized as a semiconductor recording medium such as a USB (Universal Serial Bus) memory or an SD (Secure Digital) card. The recording medium may also be realized as a magnetic recording medium such as a flexible disk or other recording medium.

[0110] The components in the present disclosure may be combined in any manner. The components in the present disclosure may be realized by software. The components in the present disclosure may be realized by circuits.

[0111] Although the present disclosure has been described above with reference to the embodiments, the present disclosure is not limited to the above-described embodiments. Various modifications that can be understood by those skilled in the art can be made to the configuration and details of the present disclosure within the scope of the present disclosure. Furthermore, each embodiment can be combined with other embodiments as appropriate.

[0112] Some or all of the above-described embodiments can be described as, but are not limited to, the following supplementary notes. (Appendix 1) a 90-degree hybrid circuit having two reflection ends; a variable stub having a line forming layer made of vanadium dioxide and extending from the two reflecting ends; a groove in which the variable stub is disposed, and a ground pattern connected to a side end of the variable stub disposed in the groove. (Appendix 2) The variable stub is a plurality of heating elements arranged in an array along one surface of the line formation layer; a heat generating drive circuit arranged in association with each of the plurality of heat generating elements; Each of the plurality of heating elements includes: a thermal connection to the line formation layer; Each of the plurality of heat generation drive circuits includes: 2. The phase shifter according to claim 1, wherein the heating element is caused to generate heat up to a temperature exceeding a phase transition temperature of vanadium dioxide contained in the line formation layer in accordance with selection of the heating element. (Appendix 3) The line formation layer is an extension line region extending from each of the two reflection ends of the 90-degree hybrid circuit; 3. The phase shifter according to claim 2, further comprising: a ground line area connecting the extension line area and the ground pattern. (Appendix 4) The extension line region includes: extension lines are formed extending from the two reflection ends of the 90-degree hybrid circuit, The ground line area includes: 4. The phase shifter according to claim 3, wherein a ground line is formed that shorts an end of the extension line formed in the extension line region to the ground pattern. (Appendix 5) the extension line having a line length corresponding to a desired phase shift amount is formed in the extension line region; 5. The phase shifter according to claim 4, wherein the ground line connecting the terminal end of the extension line formed in the extension line region and the ground pattern is formed in the ground line region. (Appendix 6) 4. The phase shifter according to claim 3, wherein an opening is formed in the line formation layer between the extension line region and the ground line region. (Appendix 7) The line formation layer is 5. The phase shifter according to claim 4, wherein the phase shifters are separated in association with each of the plurality of heat generating elements arranged in an array in the extension direction of the extension line. (Appendix 8) a heat generating drive circuit for causing the heat generating element used to form the extension line and the ground line corresponding to the conductor pattern according to a desired phase shift amount to generate heat is selected using a phase shift table in which conductor patterns according to a phase shift amount are registered; 5. The phase shifter according to claim 4, wherein the extension line and the ground line are formed in the line formation layer in accordance with the conductor pattern set using the phase shift table. (Appendix 9) The ground pattern includes: two grooves in which the variable stubs are disposed are formed; The variable stub is one disposed in each of the two grooves formed in the ground pattern, A phase shifter according to Supplementary Note 1, connected to each of the two reflection ends of the 90-degree hybrid circuit. (Appendix 10) A phase shifter according to any one of Supplementary Notes 1 to 9; an antenna array in which a plurality of patch antennas are arranged in a two-dimensional array, The phase shifter an antenna device arranged in association with each of the plurality of patch antennas; [Explanation of symbols]

[0113] 1, 2 Antenna device 10, 21 Phase shifter 11, 31 90-degree hybrid circuit 12, 32 Ground Pattern 13, 13A, 13B, 33 Variable stub 20 Antenna Array 22 Matrix Circuit 27 Drive circuit 17, 28 Control circuit 29 Signal source 140, 220 board 131 Heat generation drive circuit 132 Heating element 133 Track formation layer 141 First insulating layer 142 Second insulating layer 200 Planar Antenna 241 First insulating layer 242 Second insulating layer 243 Third insulating layer 244 Fourth insulating layer 251 1st ground layer 252 2nd ground layer 253 3rd ground layer 254 4th ground layer 255 via 271 First drive circuit 272 Second drive circuit

Claims

1. a 90-degree hybrid circuit having two reflection ends; a variable stub having a line-forming layer made of vanadium dioxide and extending from each of the two reflecting ends; a groove in which the variable stub is disposed, and a ground pattern connected to a side end of the variable stub disposed in the groove.

2. The variable stub is a plurality of heating elements arranged in an array along one surface of the line formation layer; a heat generating drive circuit arranged in association with each of the plurality of heat generating elements; Each of the plurality of heating elements includes: a thermal connection to the line formation layer; Each of the plurality of heat generation drive circuits includes:

2. The phase shifter according to claim 1, wherein the heating element is caused to generate heat up to a temperature exceeding a phase transition temperature of vanadium dioxide contained in the line formation layer in accordance with the selection of the heating element.

3. The line formation layer is an extension line region extending from each of the two reflection ends of the 90-degree hybrid circuit; 3. The phase shifter according to claim 2, further comprising a ground line region connecting the extension line region and the ground pattern.

4. The extension line region includes: extension lines are formed extending from the two reflection ends of the 90-degree hybrid circuit, The ground line area includes:

4. The phase shifter according to claim 3, wherein a ground line is formed to short-circuit the end of the extension line formed in the extension line region to the ground pattern.

5. the extension line having a line length corresponding to a desired phase shift amount is formed in the extension line region; 5. The phase shifter according to claim 4, wherein the ground line connecting the terminal end of the extension line formed in the extension line region to the ground pattern is formed in the ground line region.

6. 4. The phase shifter according to claim 3, wherein an opening is formed in the line formation layer between the extension line region and the ground line region.

7. the extension line region and the ground line region are separated in the line formation layer; 5. The phase shifter according to claim 4, wherein the extension line region and the ground line region are electrically connected by a plurality of connection members arranged in correspondence with the heat generating elements adjacent to each other in a direction perpendicular to the extension direction.

8. a heat generating drive circuit for causing the heat generating element used to form the extension line and the ground line corresponding to the conductor pattern according to a desired phase shift amount to generate heat is selected using a phase shift table in which conductor patterns according to a phase shift amount are registered; 5. The phase shifter according to claim 4, wherein the extension lines and the ground lines are formed in the line formation layer in accordance with the conductor pattern set using the phase shift table.

9. The ground pattern includes: two grooves in which the variable stubs are disposed are formed; The variable stub is one disposed in each of the two grooves formed in the ground pattern, 2. The phase shifter according to claim 1, wherein the phase shifter is connected to each of the two reflection ends of the 90-degree hybrid circuit.

10. A phase shifter according to any one of claims 1 to 9; an antenna array in which a plurality of patch antennas are arranged in a two-dimensional array, The phase shifter an antenna device arranged in association with each of the plurality of patch antennas;

Images