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JP2025123402A5Pending Publication Date: 2025-11-07SEMICON ENERGY LAB CO LTD
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Patent Information

Application Number
JP2025101280
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2014-06-30
Filing Date
2025-06-17
Publication Date
2025-11-07

AI Technical Summary

Technical Problem

Existing flexible devices, such as semiconductor devices and display devices, are prone to warping, distortion, and reliability issues in high-temperature and high-humidity environments due to differences in material properties and expansion coefficients.

Method used

A semiconductor device with a configuration of two flexible substrates and an element layer, where the substrates have controlled thickness and linear expansion coefficients, and adhesive layers with uniform thickness and expansion coefficients, to minimize stress and maintain structural integrity.

Benefits of technology

The device is less likely to warp or distort, ensuring high reliability and flexibility even under harsh conditions, making it suitable for applications requiring durability and lightness.

✦ Generated by Eureka AI based on patent content.

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Abstract

To provide a device that is hard to cause warpage and distortion even under a high-temperature environment or high-humidity environment.SOLUTION: A light emitting device has: a first flexible substrate; a second flexible substrate; and an element layer. The first flexible substrate has organic resin, and the second flexible substrate has the organic resin. The element layer is located between the first flexible substrate and the second flexible substrate, and includes a light emitting element. The light emitting element is configured to emit light at a first flexible substrate side. The first flexible substrate has a first part, and the second flexible substrate has a second part. The first part is high in average of transmittance in a wavelength more than 400nm and less than 800nm, in comparison with the second part.SELECTED DRAWING: Figure 1
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Description

[Technical Field]

[0001] One embodiment of the present invention relates to a light-emitting device, an input / output device, and an electronic device. The present invention relates to a light-emitting device, an input / output device, and an electronic device.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. One aspect relates to an article, a method, or a manufacturing method. Manufacture or composition of matter. More specifically, the technical field of one embodiment of the invention disclosed in this specification is a semiconductor device, a display, devices, light-emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices (e.g., touch sensors, output devices, input / output devices (e.g., touch panels), and driving methods thereof or a manufacturing method thereof can be cited as an example. [Background technology]

[0003] Electroluminescence (EL) is used The light-emitting element (also referred to as EL element) is easy to make thin and lightweight, and responds quickly to input signals. It has features such as being able to be easily handled and being driven by a low-voltage DC power supply, and is suitable for use in display devices and lighting. Applications to devices are being considered.

[0004] In addition, a semiconductor element, a display element, a light emitting element, a display ... Development of flexible devices equipped with functional elements such as optical elements is underway. Typical examples of flexible devices include lighting devices, image display devices, and transistors. Examples include various semiconductor circuits having semiconductor elements.

[0005] Patent Document 1 describes a method for manufacturing a film substrate on which transistors and organic EL elements, which are switching elements, are mounted. A flexible active matrix light emitting device with a display element is disclosed.

[0006] Furthermore, display devices are expected to be used in a variety of applications, and diversification is required. For example, the development of smartphones and tablet devices with touch panels as mobile information terminals. is currently underway. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2003-174153 Summary of the Invention [Problem to be solved by the invention]

[0008] One aspect of the present invention provides a device that is less likely to warp or distort even in a high-temperature environment or a high-humidity environment. Another object of the present invention is to provide a highly reliable device. Another object of the present invention is to provide a device that is strong against repeated bending. Another object of the present invention is to provide a light-weight, thin, or Another object of the present invention is to provide a flexible device. devices such as novel semiconductor devices, light-emitting devices, display devices, input / output devices, electronic devices, and lighting devices; One of the purposes is to provide

[0009] The description of these problems does not preclude the existence of other problems. It is not necessary for the present invention to solve all of these problems. The above will be made clear from the description, drawings, claims, etc. It is possible to extract other issues from the descriptions in the patent, claims, etc. [Means for solving the problem]

[0010] One embodiment of the present invention is a semiconductor device including a first flexible substrate, a second flexible substrate, and an element layer. The flexible substrate includes an organic resin, the second flexible substrate includes an organic resin, and the element layer includes a first flexible substrate. the device layer is located between the first flexible substrate and the second flexible substrate, and the device layer includes a light-emitting element, the light-emitting element being a first The flexible substrate has a function of emitting light to the flexible substrate side, and the first flexible substrate has a first portion. The second flexible substrate has a second portion, and the first portion is 4 wavelengths thicker than the second portion. This light-emitting device has a high average transmittance in the wavelength range of 00 nm to 800 nm.

[0011] Alternatively, one embodiment of the present invention is a semiconductor device including a first flexible substrate, a second flexible substrate, and an element layer, The first flexible substrate includes an organic resin, the second flexible substrate includes an organic resin, and the element layer includes a a light-emitting element disposed between the first flexible substrate and the second flexible substrate, the light-emitting element being a light-emitting element; has a function of emitting light toward the first flexible substrate side, and the first flexible substrate is the second flexible substrate has a fourth portion, the fourth portion being yellower than the third portion; It is a colorful, light-emitting device.

[0012] The fourth part being yellower than the third part means that the fourth part and the third part are yellower than the third part. Each absorbs light in a specific wavelength range and reflects other light, improving the efficiency of light-emitting devices. To the observer, the fourth part appears yellower than the third part. For example, The fourth part is in the yellow wavelength range (for example, 570 nm to 590 nm) compared to the third part. (below) has a high reflectance of light in the wavelength range complementary to yellow (for example, 450 nm to 495 nm) It can also be said that the light absorption rate is high.

[0013] In each of the above configurations, the first flexible substrate has a fifth portion, and the second flexible substrate has a sixth portion. The difference between the linear expansion coefficient of the fifth portion and the linear expansion coefficient of the sixth portion is 15pp m / K or less is preferable, 10 ppm / K or less is more preferable, and 5 ppm / K or less is even more preferable. It is preferable, and 3 ppm / K or less is particularly preferable.

[0014] In each of the above configurations, the first flexible substrate has a seventh portion and the second flexible substrate has an eighth portion. The difference between the thickness of the seventh portion and the thickness of the eighth portion is preferably within 10 μm. Preferably, the thickness is within 5 μm, more preferably within 3 μm, and particularly preferably within 1.5 μm. I wish.

[0015] In each of the above configurations, even if the first flexible substrate and the second flexible substrate contain the same material, good.

[0016] In each of the above structures, a first adhesive layer is positioned between the first flexible substrate and the element layer, and a second adhesive layer is positioned between the first flexible substrate and the element layer. and a second adhesive layer located between the flexible substrate and the device layer. , the sum of the thickness of the first flexible substrate and the first adhesive layer, and the thickness of the second flexible substrate and the second adhesive layer The difference between the sum of the thicknesses and is preferably within 10 μm, more preferably within 5 μm, and most preferably within 3 μm. More preferably, the thickness is within 1.5 μm. Alternatively, the first adhesive layer may have a thickness of 9 μm or less. the second adhesive layer has a tenth portion, and the difference between the thickness of the ninth portion and the thickness of the tenth portion is is preferably within 10 μm, more preferably within 5 μm, and even more preferably within 3 μm. , 1.5 μm or less is particularly preferable.

[0017] In each of the above configurations, the first flexible substrate has an eleventh portion, and the second flexible substrate has a first The twelfth portion may have a higher glass transition temperature than the eleventh portion. stomach.

[0018] Another embodiment of the present invention is a light-emitting device including the above-described structure and a flexible printed circuit (FPC). It is a module that has a synchronous serial interface (SSI) and a synchronous serial interface (SSI).

[0019] An input / output device to which the above-described configurations are applied is also one aspect of the present invention. The output device may include, for example, a light-emitting element or a display element, a detection element or a touch sensor, and a , may have.

[0020] Further, electronic devices and lighting devices using the light-emitting devices or input / output devices having the above-described structures are also embodiments of the present invention. For example, one embodiment of the present invention is a light-emitting device, an input / output device, or a module having any of the above structures. cable, antenna, battery, housing, speaker, microphone, operation switch or operation button and an electronic device having the above.

[0021] Note that in this specification and the like, the light-emitting device or the input / output device of one embodiment of the present invention is is equipped with a connector such as TCP (Tape Carrier Package). or a module in which ICs are mounted using the COG (Chip On Glass) method, etc. Alternatively, these modules may also include modules such as those described in the present invention. The light-emitting device or input / output device according to one embodiment may be included. [Effects of the Invention]

[0022] According to one aspect of the present invention, a device that is less likely to warp or distort even in a high-temperature environment or a high-humidity environment According to one embodiment of the present invention, a highly reliable device can be provided. According to one aspect of the present invention, a device that is strong against repeated bending can be provided. Depending on the embodiment, a device that is lightweight, thin, or flexible can be provided. According to one embodiment of the present invention, a novel semiconductor device, a light-emitting device, a display device, an input / output device, an electronic A device such as an appliance or lighting device can be provided.

[0023] The description of these effects does not preclude the existence of other effects. The embodiment does not necessarily have to have all of these effects. , the specification, drawings, claims, etc., and It is possible to extract other effects from the claims and other descriptions. [Brief explanation of the drawings]

[0024] [Figure 1] 1A and 1B illustrate an example of a light-emitting device. [Figure 2] 1A and 1B illustrate an example of a light-emitting device. [Figure 3] 1A and 1B illustrate an example of a light-emitting device. [Figure 4] FIG. 1 illustrates an example of an input / output device. [Figure 5] FIG. 1 illustrates an example of an input / output device. [Figure 6] FIG. 1 illustrates an example of an input / output device. [Figure 7] FIG. 1 illustrates an example of an input / output device. [Figure 8] FIG. 1 illustrates an example of an input / output device. [Figure 9] FIG. 1 illustrates an example of an input / output device. [Figure 10] 1A and 1B illustrate examples of electronic devices and lighting devices. [Figure 11] 1A and 1B are diagrams illustrating examples of electronic devices. DETAILED DESCRIPTION OF THE INVENTION

[0025] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiments, and various changes and modifications may be made in the form and details thereof without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be achieved by the following embodiments. It should not be construed as being limited to the contents described.

[0026] In the configuration of the invention described below, the same parts or parts having similar functions are designated by the same reference numerals. The same reference numerals are used in common among different drawings, and the repeated explanations thereof will be omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be added.

[0027] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as those in the actual device for ease of understanding. Therefore, the disclosed invention may not necessarily represent the actual position, size, range, etc. The position, size, range, etc. are not necessarily limited to those disclosed in the drawings, etc.

[0028] The words "film" and "layer" may be used interchangeably depending on the situation. For example, the term "conductive layer" can be used interchangeably with the term "conductive film." Alternatively, for example, the term "insulating film" may be changed to " may be changed to the term "insulating layer."

[0029] (Embodiment 1) In this embodiment, a light-emitting device of one embodiment of the present invention will be described with reference to FIG.

[0030] In this embodiment, a light-emitting device using an organic EL element will be mainly described as an example. The present invention is not limited to this. Another embodiment of the present invention is a light-emitting device or a display device. The present invention can be applied not only to display devices but also to various devices such as semiconductor devices and input / output devices.

[0031] After forming a layer to be peeled on a fabrication substrate, the layer to be peeled is peeled from the fabrication substrate and transferred to another substrate. According to this method, for example, a film to be peeled formed on a highly heat-resistant substrate can be Therefore, the layer to be peeled can be transferred to a substrate with low heat resistance. Not limited by low thermal conductivity substrates, and lighter, thinner, or more flexible than fabrication substrates The layer to be peeled can be transferred to a substrate having a high resistance, and the layer can be used in a semiconductor device, a light-emitting device, a display device, etc. This makes it possible to make various devices such as input / output devices lighter, thinner, and more flexible.

[0032] An example of the structure of the light-emitting device of this embodiment is shown in FIGS.

[0033] The light-emitting device shown in FIG. 1(A1) includes a substrate 101, an adhesive layer 103, an insulating layer 105, an element layer 10 6a, adhesive layer 107, functional layer 106b, insulating layer 115, adhesive layer 113, and substrate 111. The substrate 101 and the substrate 111 are both flexible. Each of the functional elements includes a semiconductor element such as a transistor. Light-emitting diodes, inorganic EL elements, organic EL elements, and other light-emitting elements, and display elements such as liquid crystal elements The functional layer 106b may be, for example, a colored layer (such as a color filter) , a light-shielding layer (such as a black matrix), or the above-mentioned functional element.

[0034] A method for manufacturing the light-emitting device shown in FIG. 1(A1) is illustrated. First, a peeling layer is formed on a manufacturing substrate. The insulating layer 105 is formed over the peeling layer, and the element layer 106a is formed over the insulating layer 105. A release layer is formed on another substrate, an insulating layer 115 is formed on the release layer, and a film is formed on the insulating layer 115. Next, the element layer 106a and the functional layer 106b are formed on the substrate 106 via the adhesive layer 107. Then, the insulating layer 105 is separated from the substrate 6 by using a release layer. Then, the substrate 101 and the insulating layer 105 are bonded together using the adhesive layer 103. The substrate and the insulating layer 115 are separated using the adhesive layer 113, and the substrate 111 and the insulating layer 115 are bonded together using the adhesive layer 113. 5 is attached to the substrate 1. In this manner, the light-emitting device shown in FIG.

[0035] After the separation of the insulating layer from the substrate, the peel layer may remain on the substrate side or on the insulating layer side. The peeling layer may be made of an inorganic material or an organic resin. Examples of materials include tungsten, molybdenum, titanium, tantalum, niobium, and nickel. Ru, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium, a metal containing an element selected from iridium and silicon, an alloy containing the element, or an alloy containing the element For example, a layer containing tungsten and a compound containing tungsten are used as the peeling layer. The organic resin may be a polyimide, polyester, Examples of the organic polymer include polyolefin, polyamide, polycarbonate, and acrylic. The resin may be used as a layer (e.g., a substrate) that constitutes the device, or the organic resin may be removed, Another substrate may be attached to the exposed surface of the layer to be peeled using an adhesive.

[0036] The light-emitting device shown in FIG. 1(A2) includes a substrate 101, an adhesive layer 103, an insulating layer 105, an element layer 10 6, adhesive layer 107, and substrate 111.

[0037] A method for manufacturing the light-emitting device shown in FIG. 1(A2) will be described below. First, a peeling layer is formed on a substrate. An insulating layer 105 is formed on the release layer, an element layer 106 is formed on the insulating layer 105, and an adhesive layer 1 The element layer 106 and the substrate 111 are bonded together using a peeling layer. The plate and the insulating layer 105 are separated, and the substrate 101 and the insulating layer 105 are bonded together using the adhesive layer 103. Through the above steps, the light-emitting device shown in FIG. 1(A2) can be manufactured.

[0038] For example, organic EL elements are prone to deterioration due to moisture, so they are mounted on organic resin substrates with low moisture resistance. However, if the above manufacturing method is used, the reliability may be insufficient. A highly insulating protective film (corresponding to one or both of the insulating layer 105 and the insulating layer 115) is formed on the glass substrate. It can be formed at high temperatures and transferred to a flexible organic resin substrate with low heat resistance and moisture resistance. By forming the organic EL element on the protective film transferred to the organic resin substrate, high reliability can be achieved. This makes it possible to fabricate flexible light-emitting devices.

[0039] In another example, a highly moisture-proof protective film is formed on a glass substrate at a high temperature, and then a After forming the organic EL element, the protective film and the organic EL element are peeled off from the glass substrate, and the heat resistance and It can be transferred to an organic resin substrate that has low moisture resistance and flexibility. By transposing the protective film and the organic EL element, a highly reliable flexible light-emitting device can be fabricated. Cut.

[0040] There are several properties required for the substrate of a flexible light-emitting device. In order to make the device flexible, the substrate must be flexible. The substrate from which light is extracted must have high transparency for visible light. The substrate on which the image is to be printed must be highly heat resistant. In order to prevent cracks in the light emitting device, it is preferable that the linear expansion coefficient of the substrate is small. It is very difficult for a plate material to combine all of these properties.

[0041] Therefore, in the light-emitting device according to one embodiment of the present invention, different materials are used for the pair of substrates. Specifically, one embodiment of the present invention is a semiconductor device including a first flexible substrate, a second flexible substrate, and an element layer. the first flexible substrate includes an organic resin, the second flexible substrate includes an organic resin, and an element layer is located between a first flexible substrate and a second flexible substrate, and the element layer includes a light-emitting element, The optical element emits light toward the first flexible substrate, and the first flexible substrate is thinner than the second flexible substrate. The light emitting device has a high average transmittance in the wavelength range of 400 nm to 800 nm.

[0042] In one embodiment of the present invention, a portion of the first flexible substrate is larger than a portion of the second flexible substrate. It is sufficient that the average transmittance in the wavelength range of 400 nm or more and 800 nm or less is high.

[0043] The second flexible substrate may be colored. Alternatively, the second flexible substrate may be translucent or Alternatively, the second flexible substrate may be yellow in color compared to the first flexible substrate. That's fine.

[0044] In the light-emitting device according to one embodiment of the present invention, a first substrate is provided which is a substrate from which light from a light-emitting element is extracted. The flexible substrate is a substrate having a higher visible light transmittance than the second flexible substrate. The visible light transmittance of the substrate is not an issue, so other properties required for the substrate can be considered. Even if the second flexible substrate is made of a thin film, the range of materials that can be selected for the second flexible substrate is not likely to be narrowed. For the performance substrate, choose a substrate that is inexpensive, has a stable supply, or is easy to mass-produce. In addition, the second flexible substrate has higher heat resistance than the first flexible substrate (for example, high glass transition temperature), a small coefficient of linear expansion, low cost, or easy mass production. ,preferable.

[0045] For example, if the substrate to which the FPC is crimped is a second flexible substrate, The second flexible substrate preferably has a higher glass transition temperature than the first flexible substrate.

[0046] Here, the thickness of the substrate often accounts for the majority of the thickness of a flexible light emitting device. Organic materials are more susceptible to temperature and humidity than inorganic materials, and can undergo reversible or irreversible Therefore, when using a film made of organic materials such as organic resin, it is difficult to light-emitting. When applied to a pair of substrates in a device, the balance of expansion or contraction between one substrate and the other substrate is If they are different, stress may be generated in the light emitting device, which may cause reversible or irreversible warping.

[0047] Therefore, in one embodiment of the present invention, the first flexible substrate and the second flexible substrate have a thickness of It is preferable that the thicknesses of the pair of substrates are the same. This can prevent warping and distortion of the light emitting device even under harsh conditions. The device can be realized.

[0048] For example, the difference between the thickness of the first flexible substrate and the thickness of the second flexible substrate is within 10 μm. is preferable, 5 μm or less is more preferable, 3 μm or less is even more preferable, and 1.5 μm or less is even more preferable. is particularly preferred.

[0049] Note that one embodiment of the present invention is not limited to the structure in which the thicknesses of the pair of flexible substrates are the same. By adjusting other physical properties of the flexible substrate, warping and distortion of the light emitting device may be suppressed. stomach.

[0050] In one embodiment of the present invention, the first flexible substrate and the second flexible substrate have the same linear expansion coefficient. It is preferable that the linear expansion coefficients of the pair of substrates are the same. This can prevent warping and distortion of the light emitting device even under harsh conditions. In addition, the degree of thermal expansion and contraction of the pair of flexible substrates is different. This is one of the causes of cracks occurring in light emitting devices. It is preferable that the difference in the linear expansion coefficients of the flexible substrates is small.

[0051] For example, the difference between the linear expansion coefficient of the first flexible substrate and the linear expansion coefficient of the second flexible substrate is 1 Preferably within 5 ppm / K, more preferably within 10 ppm / K, and It is more preferable, and 3 ppm / K or less is particularly preferable.

[0052] Additionally, the first flexible substrate and the second flexible substrate may include the same material.

[0053] In one embodiment of the present invention, a first adhesive layer is provided between the first flexible substrate and the device layer. and a second adhesive layer positioned between the second flexible substrate and the device layer.

[0054] The adhesive layer can be made of an adhesive containing an organic material. It is more susceptible to temperature and humidity than other materials, and may expand or contract reversibly or irreversibly. Cheap.

[0055] Therefore, in one embodiment of the present invention, the first adhesive layer and the second adhesive layer have the same thickness. It is preferable that the thickness of the pair of adhesive layers is uniform. Furthermore, it is possible to suppress warping and distortion of the light emitting device even in such a case. It can be realized.

[0056] For example, the difference between the thickness of the first adhesive layer and the thickness of the second adhesive layer is preferably within 10 μm. Preferably, the thickness is within 5 μm, more preferably within 3 μm, and particularly preferably within 1.5 μm. I wish.

[0057] Furthermore, the sum of the thicknesses of the first flexible substrate and the first adhesive layer and the thickness of the second flexible substrate and the second adhesive layer The difference between the sum of the layer thicknesses and is preferably within 10 μm, more preferably within 5 μm, and more preferably within 3 μm. In the light emitting device, the thickness is more preferably within 1.5 μm, and particularly preferably within 1.5 μm. the thickness of the flexible substrate and adhesive layer located on the other side of the flexible substrate and adhesive layer This prevents warping and distortion of light-emitting devices even in high-temperature and high-humidity environments. Furthermore, a light emitting device that is resistant to repeated bending can be realized.

[0058] Note that one embodiment of the present invention is not limited to the structure in which the thicknesses of the pair of adhesive layers are the same. In this case, warping, distortion, etc. of the light emitting device may be suppressed by adjusting other physical property values.

[0059] In one embodiment of the present invention, the first adhesive layer and the second adhesive layer have the same linear expansion coefficient. The linear expansion coefficients of the pair of adhesive layers are the same, so that the adhesive layer can be used in high temperature environments, high humidity environments, etc. Furthermore, it is possible to suppress warping and distortion of the light emitting device even in such a case. In addition, the difference in the degree of expansion and contraction due to heat of the pair of adhesive layers can be realized. This is one of the causes of cracks in optical devices. It is preferable that the difference in the expansion coefficients is small.

[0060] For example, the difference between the linear expansion coefficient of the first adhesive layer and the linear expansion coefficient of the second adhesive layer is 15 ppm. / K or less, more preferably 10 ppm / K or less, and even more preferably 5 ppm / K or less. It is preferable that the concentration is within 3 ppm / K, and particularly preferable that the concentration is within 3 ppm / K.

[0061] A specific example of the light-emitting device according to one embodiment of the present invention will be described below.

[0062] <Example 1> FIG. 1B shows a plan view of the light emitting device, and a cross section taken along the dashed line A1-A2 in FIG. An example of this is shown in FIG. 1(D). The light-emitting device shown in Example 1 uses a color filter method. In this embodiment, the light emitting device is a top emission type light emitting device. There are two types of color display: one with three sub-pixels of R (red), G (green), and B (blue), and the other with R (red), A configuration in which one color is expressed by four sub-pixels of G (green), B (blue), and W (white), R (red), G A configuration in which one color is expressed by four sub-pixels of colors A (green), B (blue), and Y (yellow) can be applied. There is no particular limitation on the color elements, and colors other than RGBWY may be used. For example, cyan, It may be made of magenta or the like.

[0063] The light-emitting device shown in FIG. 1B has a light-emitting portion 804, a driver circuit portion 806, and an FPC 808. .

[0064] The light emitting device shown in FIG. 1(D) includes a substrate 101, an adhesive layer 103, an insulating layer 105, and a plurality of transistors. a resistor, a conductive layer 857, an insulating layer 815, an insulating layer 817, a plurality of light-emitting elements, an insulating layer 821, The adhesive layer 822, the colored layer 845, the light-shielding layer 847, the insulating layer 115, the adhesive layer 113, and the substrate 1 The adhesive layer 822, the insulating layer 115, the adhesive layer 113, and the substrate 111 are resistant to visible light. The light emitting element and the transistor included in the light emitting section 804 and the driving circuit section 806 are 101, the substrate 111, and the adhesive layer 822 seal the device.

[0065] The light emitting section 804 is formed by attaching a transistor 8 to the substrate 101 via an adhesive layer 103 and an insulating layer 105. The light emitting element 830 includes a lower electrode 831 on an insulating layer 817. an EL layer 833 on the lower electrode 831, and an upper electrode 835 on the EL layer 833. The lower electrode 831 is electrically connected to the source electrode or the drain electrode of the transistor 820. The end of the lower electrode 831 is covered with an insulating layer 821. The lower electrode 831 is The upper electrode 835 is preferably transparent to visible light.

[0066] The light-emitting section 804 includes a colored layer 845 overlapping the light-emitting element 830 and a layer overlapping the insulating layer 821. The light-emitting element 830 and the colored layer 845 are filled with an adhesive layer 822. It is being done.

[0067] The insulating layer 815 has the effect of suppressing the diffusion of impurities into the semiconductor that constitutes the transistor. The insulating layer 817 also has a planarizing function to reduce surface irregularities caused by the transistor. It is preferable to select an insulating layer having a

[0068] The driving circuit section 806 is a transistor formed on the substrate 101 via the adhesive layer 103 and the insulating layer 105. In FIG. 1D, one of the transistors included in the driver circuit portion 806 is 1 shows a transistor.

[0069] The insulating layer 105 and the substrate 101 are bonded together by an adhesive layer 103. The insulating layer 105 and the substrate 111 are bonded together by an adhesive layer 113. When a highly moisture-proof film is used for at least one of the light-emitting element 830 and the transistor 8 This is preferable because it can prevent impurities such as moisture from entering the light emitting device 20 and improve the reliability of the light emitting device. It's nice.

[0070] The conductive layer 857 transmits signals (video signals, clock signals, start signals, etc.) from the outside to the driving circuit section 806. It is electrically connected to an external input terminal that transmits a signal (such as a start signal or a reset signal) or a potential. Here, an example is shown in which an FPC808 is provided as an external input terminal. Therefore, the conductive layer 857 is made of the same material and process as the electrodes and wiring used in the light-emitting section and the drive circuit section. Here, the conductive layer 857 is preferably formed by the steps of forming the transistor 820. This shows an example in which the electrode is made of the same material and in the same process as the electrode.

[0071] In the light-emitting device shown in FIG. 1(D), the FPC 808 is located on the substrate 111. 1, the substrate 111, the adhesive layer 113, the insulating layer 115, the adhesive layer 822, the insulating layer 817, and the insulating The connector 825 is connected to the conductive layer 857 through an opening provided in the layer 815. The FPC 808 is electrically connected to the conductive layer 857 via the connector 825. When the conductive layer 857 and the substrate 111 overlap, an opening is made in the substrate 111 ( By using a substrate having an opening, the conductive layer 857, the connector 825, and the FPC 8 08 can be electrically connected.

[0072] The substrate 111 is a substrate on the side from which light from the light emitting element 830 is extracted. has a higher average transmittance at wavelengths of 400 nm or more and 800 nm or less than that of the substrate 101. It is preferable.

[0073] The substrate 101 is the substrate on which the FPC is pressure-bonded. It is preferable that the glass transition temperature is higher than that of 11.

[0074] <Example 2> FIG. 1C shows a plan view of the light emitting device, and a cross section taken along the dashed line A3-A4 in FIG. An example of the diagram is shown in FIG. 2(A). The light emitting device shown in Example 2 is different from Example 1 in that it is a color This is a top-emission type light-emitting device using a filter system. Only the points that are different from those in Example 1 will be described in detail, and explanations of points common to Example 1 will be omitted.

[0075] The light-emitting device shown in FIG. 2A differs from the light-emitting device shown in FIG. 1D in the following respects.

[0076] The light-emitting device shown in FIG. 2A includes an insulating layer 817a and an insulating layer 817b. A conductive layer 856 is provided over the source or drain electrode of the transistor 820. The lower electrode of the optical element 830 is electrically connected via the conductive layer 856 .

[0077] The light-emitting device shown in FIG. 2A has a spacer 823 over an insulating layer 821. By providing the substrate 3, the distance between the substrate 101 and the substrate 111 can be adjusted.

[0078] The light-emitting device shown in FIG. 2A includes an overcoat 84 that covers the colored layer 845 and the light-shielding layer 847. The space between the light-emitting element 830 and the overcoat 849 is filled with an adhesive layer 822. do.

[0079] 2A, the substrate 101 and the substrate 111 are different in size. C808 is located on the insulating layer 115 and does not overlap the substrate 111. 115, adhesive layer 822, insulating layer 817a, and an opening provided in insulating layer 815. Since there is no need to provide an opening in the substrate 111, the material of the substrate 111 is The fee is not limited.

[0080] As shown in FIG. 2B, the light emitting element 830 has a lower electrode 831 and an EL layer 833. The optical adjustment layer 832 may include a conductive layer having light-transmitting properties. It is preferable to use a transparent material. By combining the light-emitting layer with the optical adjustment layer, light with high color purity can be emitted from the light-emitting device of one embodiment of the present invention. The thickness of the optical adjustment layer may be changed depending on the color of each sub-pixel. .

[0081] <Example 3> FIG. 1C shows a plan view of the light emitting device, and a cross section taken along the dashed line A3-A4 in FIG. An example of the figure is shown in FIG. 2(C). The light-emitting device shown in Example 3 is a top panel using a color-coded method. It is an emission type light emitting device.

[0082] The light emitting device shown in FIG. 2(C) includes a substrate 101, an adhesive layer 103, an insulating layer 105, and a plurality of transistors. a resistor, a conductive layer 857, an insulating layer 815, an insulating layer 817, a plurality of light-emitting elements, an insulating layer 821, The adhesive layer 822 and the substrate 111 are included. transmits visible light.

[0083] In the light-emitting device shown in FIG. 2C, the connector 825 is located on the insulating layer 815. 5 is connected to the conductive layer 857 through an opening provided in the insulating layer 815. The connecting member 825 is connected to the FPC 808. The FPC 808 and the conductive layer 8 are connected to each other via the connecting member 825. 57 is electrically connected.

[0084] <Example 4> FIG. 1C shows a plan view of the light emitting device, and a cross section taken along the dashed line A3-A4 in FIG. An example of the diagram is shown in FIG. 3(A). The light-emitting device shown in Example 4 uses a color filter method. This is a bottom-emission type light-emitting device.

[0085] The light emitting device shown in FIG. 3(A) includes a substrate 101, an adhesive layer 103, an insulating layer 105, and a plurality of transistors. resistor, conductive layer 857, insulating layer 815, colored layer 845, insulating layer 817a, insulating layer 817b , a conductive layer 856, a plurality of light-emitting elements, an insulating layer 821, an adhesive layer 822, and a substrate 111. The substrate 101, the adhesive layer 103, the insulating layer 105, the insulating layer 815, the insulating layer 817a, and the insulating layer 817b are The edge layer 817b is transparent to visible light.

[0086] The light emitting section 804 is formed by attaching a transistor 8 to the substrate 101 via an adhesive layer 103 and an insulating layer 105. 20, a transistor 824, and a light-emitting element 830. The light-emitting element 830 includes an insulating layer 8 A lower electrode 831 on 17b, an EL layer 833 on the lower electrode 831, and an upper layer on the EL layer 833. The lower electrode 831 is the source electrode or drain electrode of the transistor 820. The end of the lower electrode 831 is covered with an insulating layer 821. The upper electrode 835 preferably reflects visible light. The lower electrode 831 preferably transmits visible light. The position where the colored layer 845 overlapping the light emitting element 830 is provided is not particularly limited. If it is provided between the edge layer 817a and the insulating layer 817b, or between the insulating layer 815 and the insulating layer 817a, good.

[0087] The driving circuit section 806 is a transistor formed on the substrate 101 via the adhesive layer 103 and the insulating layer 105. In FIG. 3A, two of the transistors included in the driver circuit portion 806 are 1 shows a transistor.

[0088] The insulating layer 105 and the substrate 101 are bonded together by an adhesive layer 103. When a highly moisture-proof film is used, the light-emitting element 830, the transistor 820, and the transistor 824 This is preferable because it can prevent impurities such as moisture from entering the light emitting device, thereby increasing the reliability of the light emitting device. .

[0089] The conductive layer 857 is connected to an external input terminal for transmitting signals and potentials from the outside to the driver circuit portion 806. Here, an example is shown in which an FPC808 is provided as the external input terminal. In this example, the conductive layer 857 is formed using the same material and process as the conductive layer 856. Shows.

[0090] The substrate 101 is a substrate on the side from which light from the light emitting element 830 is extracted. has a higher average transmittance at wavelengths of 400 nm or more and 800 nm or less than that of the substrate 111. It is preferable.

[0091] The substrate 101 is the substrate on which the FPC is pressure-bonded. It is preferable that the glass transition temperature is higher than that of 11.

[0092] <Example 5> FIG. 3(B) shows an example of a light emitting device different from Examples 1 to 4.

[0093] The light-emitting device shown in FIG. 3B includes a substrate 101, an adhesive layer 103, an insulating layer 105, a conductive layer 814, and a , the conductive layer 857a, the conductive layer 857b, the light-emitting element 830, the insulating layer 821, the adhesive layer 822, and and a substrate 111 .

[0094] The conductive layer 857a and the conductive layer 857b are external connection electrodes of the light emitting device, and are electrically connected to an FPC or the like. can be effectively connected.

[0095] The light-emitting element 830 includes a lower electrode 831, an EL layer 833, and an upper electrode 835. The end of the electrode 831 is covered with an insulating layer 821. The light emitting element 830 is a bottom emitter. The type is a top-emission type, a dual-emission type, or a top-emission type. The electrode, substrate, insulating layer, etc. are transparent to visible light. Make an electrical connection.

[0096] In this embodiment, an example in which the light emitting element 830 is a bottom emission type is shown. Reference numeral 101 denotes a substrate on the side from which light from the light emitting element 830 is extracted. The average transmittance in the wavelength range of 400 nm to 800 nm is higher than that of the substrate 111. is preferred.

[0097] The substrate 101 is the substrate on which the FPC is pressure-bonded. It is preferable that the glass transition temperature is higher than that of 11.

[0098] The substrate on the light extraction side has a light extraction structure that includes a hemispherical lens, a microlens array, The substrate may have a film with a concave-convex structure, a light diffusion film, etc. For example, a resin substrate The lens or film is placed on the substrate, and the refractive index is the same as that of the substrate or the lens or film. By bonding the substrate with an adhesive having a light extraction structure, a substrate having a light extraction structure can be formed. can.

[0099] The conductive layer 814 is not necessarily provided, but the voltage drop due to the resistance of the lower electrode 831 For the same purpose, the upper electrode 835 and the A conductive layer for electrically connecting the insulating layer 821, the EL layer 833, the upper electrode 835, or the like is provided on the insulating layer 821, the EL layer 833, or the upper electrode 835. It is okay to do so.

[0100] The conductive layer 814 may be made of copper, titanium, tantalum, tungsten, molybdenum, chromium, or neodymium. Materials selected from the group consisting of zinc, scandium, nickel, and aluminum, or alloys containing these as their main components The conductive layer 814 can be formed as a single layer or a stacked layer using a gold material or the like. For example, it can be 0.1 μm or more and 3 μm or less, and preferably 0.1 μm or more and 0. It is less than 5 μm.

[0101] <Example of materials> Next, materials that can be used in the light-emitting device will be described. The description of the configuration may be omitted.

[0102] The substrate can be made of a material such as glass, quartz, organic resin, metal, or alloy. The substrate on the side from which light from the element is extracted is made of a material that is translucent to the light.

[0103] In particular, it is preferable to use a flexible substrate. For example, a substrate made of organic resin or a flexible material having a thickness sufficient to provide flexibility is used. Various glasses, metals and alloys can be used.

[0104] Since organic resin has a smaller specific gravity than glass, if organic resin is used as a flexible substrate, This is preferable because it allows the light-emitting device to be made lighter than when glass is used.

[0105] It is preferable to use a highly tough material for the substrate. This makes it superior in impact resistance and breakage resistance. For example, a light emitting device that is difficult to be damaged can be realized using an organic resin substrate, a thin metal substrate, or The alloy substrate is lighter and less susceptible to breakage than a glass substrate. A light-emitting device can be realized.

[0106] Metallic and alloy materials have high thermal conductivity and can easily conduct heat across the entire substrate, making them ideal for light-emitting devices. This is preferable because it can suppress a local temperature rise in the substrate. The thickness is preferably 10 μm or more and 200 μm or less, and more preferably 20 μm or more and 50 μm or less. is more preferable.

[0107] The material for forming the metal substrate or alloy substrate is not particularly limited, but for example, aluminum , copper, nickel, or an alloy of a metal such as an aluminum alloy or stainless steel is preferred. It can be used for.

[0108] In addition, using a material with high thermal emissivity for the substrate prevents the surface temperature of the light-emitting device from rising. For example, the substrate can be made of a metal substrate and the thermal emissivity can be reduced. As a laminate structure of high-temperature layers (for example, metal oxides or ceramic materials can be used) That's fine.

[0109] Examples of materials that are flexible and transparent include polyethylene terephthalate (PET). ), polyester resins such as polyethylene naphthalate (PEN), polyacrylonitrile Resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin , polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), Chloroolefin resin, polystyrene resin, polyamide-imide resin, polyvinyl chloride resin, etc. In particular, it is preferable to use a material with a low linear expansion coefficient, for example, polyamide. Suitable materials for use include ethyleneimide resin, polyimide resin, and PET. Resin-impregnated substrates (also called prepregs) and inorganic fillers mixed with organic resins to achieve linear expansion Substrates with reduced modulus may also be used.

[0110] As for the flexible substrate, a layer using the above material serves as a hard layer that protects the surface of the light emitting device from scratches. A hard coat layer (e.g., silicon nitride layer) or a layer of a material that can disperse pressure (e.g., aluminum The insulating layer may be laminated with a polymer layer (e.g., a methacrylate resin layer).

[0111] The flexible substrate may be formed by stacking a plurality of layers. This improves the barrier properties against water and oxygen, making it possible to provide a highly reliable light-emitting device. do.

[0112] For example, a flexible substrate in which a glass layer, an adhesive layer, and an organic resin layer are laminated from the side closer to the light emitting element. The thickness of the glass layer is preferably 20 μm or more and 200 μm or less. The thickness of the glass layer is preferably between 25 μm and 100 μm. A glass layer with such a thickness is resistant to water and oxygen. The thickness of the organic resin layer is 10 The thickness of such organic By providing the resin layer on the outer side of the glass layer, breakage and cracks in the glass layer are suppressed, The mechanical strength can be improved. By applying it to a plate, it becomes possible to create a highly reliable and flexible light-emitting device. do.

[0113] The adhesive layer can be made of a variety of adhesives, including UV-curable and other light-curable adhesives, reactive-curable adhesives, heat-curable adhesives, and adhesives containing Various curing adhesives such as epoxy adhesives can be used. Resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin , PVC (Polyvinyl chloride) resin, PVB (Polyvinyl butyral) resin, EVA ( Ethylene vinyl acetate resins are examples. In particular, epoxy resins have low moisture permeability. A two-component resin may also be used. Good too.

[0114] The resin may also contain a desiccant. For example, an alkaline earth metal oxide (oxide Use a substance that absorbs water by chemical adsorption, such as calcium or barium oxide. Alternatively, materials such as zeolite and silica gel can absorb moisture by physical adsorption. If a desiccant is included, impurities such as moisture may penetrate into the functional elements. This is preferable because it can suppress the penetration of foreign matter, thereby improving the reliability of the light emitting device.

[0115] Furthermore, by mixing a filler with a high refractive index or a light scattering material into the resin, it is possible to For example, titanium oxide, barium oxide, and zeolite can improve the light extraction efficiency. For example, oolites, zirconium, etc. can be used.

[0116] At least one of the insulating layer 105 and the insulating layer 115 may be formed using an insulating film having high moisture resistance. Alternatively, at least one of the insulating layer 105 and the insulating layer 115 may contain impurity luminescent elements. It is preferable that the agent has a function to prevent the agent from spreading to the offspring.

[0117] Highly moisture-proof insulating films include silicon nitride films and silicon nitride oxide films containing nitrogen and silicon. and films containing nitrogen and aluminum, such as an aluminum nitride film. Alternatively, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, or the like may be used.

[0118] For example, the water vapor permeability of a highly moisture-proof insulating film is 1×10 -5 [g / (m 2 ·day)] Less than 1 × 10 -6 [g / (m 2 ·day)] or less, more preferably 1 × 10 -7 [g / (m 2·day)] or less, more preferably 1 × 10 -8 [g / (m 2 ·da y)] or less.

[0119] In the light-emitting device, at least one of the insulating layer 105 and the insulating layer 115 is formed between the element layer 106a and the insulating layer 115. Alternatively, the insulating layer 105 or the insulating layer 106 needs to transmit light emitted from a light-emitting element included in the element layer 106. The insulating layer on the side that transmits the light emitted from the light emitting element among the layers 115 has a wavelength of 400 nm or less than the other insulating layer. It is preferable that the average transmittance in the range of 00 nm to 800 nm is high.

[0120] The insulating layer 105 and the insulating layer 115 preferably contain oxygen, nitrogen, and silicon, respectively. For example, the insulating layer 105 and the insulating layer 115 each include silicon oxynitride. Preferably, the insulating layer 105 and the insulating layer 115 are made of silicon nitride or nitride. Preferably, the insulating layer 105 and the insulating layer 115 each have silicon oxide. The silicon oxynitride film and the silicon nitride film are included. It is preferable that the silicon oxide nitride film and the silicon nitride film are alternately formed. By stacking the layers so that anti-phase interference occurs more frequently in the visible range, This can increase the transmittance.

[0121] The structure of the transistor included in the light-emitting device is not particularly limited. The transistor may be a top gate type or an inverted stagger type. The semiconductor used in the transistor may have any of the following transistor structures: The material is not particularly limited, and examples thereof include silicon, germanium, and organic semiconductors. Or, metal oxides containing at least one of indium, gallium, and zinc, such as In-Ga-Zn metal oxides. An oxide semiconductor containing at least one of these may be used.

[0122] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor having crystallinity (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or a semiconductor having a partially crystalline region) When a semiconductor having crystallinity is used, the transistor This is preferable because it can suppress deterioration of the star characteristics.

[0123] For stabilizing the characteristics of the transistor, it is preferable to provide an underlayer film. Inorganic films such as silicon oxide film, silicon nitride film, silicon oxynitride film, and silicon nitride oxide film The insulating film can be formed as a single layer or a laminated layer. CVD (Chemical Vapor Deposition) method (Plasma CVD method) , thermal CVD method, MOCVD (Metal Organic CVD) method, etc.), ALD ( Formed using Atomic Layer Deposition (ALD), coating, printing, etc. In addition, the undercoat film may not be provided if it is not necessary. The film 105 can also serve as an underlying film for the transistor.

[0124] The light emitting element can be a self-luminous element, and the brightness can be controlled by a current or a voltage. This category includes devices that are controlled by light emitting diodes (LEDs), organic EL elements, inorganic EL elements, etc. can be used.

[0125] The light emitting elements are top emission type, bottom emission type, and dual emission type. For the electrode on the light extraction side, a conductive film that transmits visible light is used. It is also preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted. .

[0126] The conductive film that transmits visible light is made of, for example, indium oxide or indium tin oxide (ITO). Indium Tin Oxide, Indium Zinc Oxide, Zinc Oxide (ZnO), Gallium It can be formed using zinc oxide doped with ammonium. It can also be formed using gold, silver, platinum, magnesium, etc. Nesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium Metallic materials such as aluminum or titanium, alloys containing these metallic materials, or nitrogen in these metallic materials Titanium nitride (for example, titanium nitride) can also be used by forming it thin enough to have light transmission properties. Furthermore, a laminated film of the above materials can be used as a conductive film. For example, a laminated film of silver and manganese can be used as a conductive film. The use of a laminated film of magnesium alloy and ITO is preferred because it can increase the conductivity. Graphene or the like may also be used.

[0127] The conductive film that reflects visible light is made of, for example, aluminum, gold, platinum, silver, nickel, or tungsten. Metallic materials such as zinc, chromium, molybdenum, iron, cobalt, copper, or palladium, or Alloys containing these metal materials can be used. In addition, aluminum and titanium may be added. Aluminum alloys such as aluminum alloys, aluminum-nickel alloys, and aluminum-neodymium alloys Alloys containing palladium (aluminum alloys), silver and copper alloys, silver, palladium and copper alloys, silver The electrode can be formed using an alloy containing silver, such as an alloy of silver and magnesium. Gold is preferred because of its high heat resistance. By laminating an oxide film, oxidation of the aluminum alloy film can be suppressed. Examples of materials for the film and metal oxide film include titanium and titanium oxide. A conductive film that transmits visible light and a film made of a metal material may be laminated. For example, a film made of silver and ITO may be laminated. A laminated film, a laminated film of an alloy of silver and magnesium and ITO, etc. can be used.

[0128] The electrodes may be formed by evaporation or sputtering. Formed using a discharge method such as the ink jet method, a printing method such as the screen printing method, or a plating method It is possible.

[0129] A voltage higher than the threshold voltage of the light-emitting element is applied between the lower electrode 831 and the upper electrode 835. When this occurs, holes are injected into the EL layer 833 from the anode side, and electrons are injected from the cathode side. The electrons and holes are recombined in the EL layer 833, and the light-emitting material contained in the EL layer 833 emits light. do.

[0130] The EL layer 833 has at least a light-emitting layer. The EL layer 833 has a positive electrode as a layer other than the light-emitting layer. Highly hole-injecting materials, highly hole-transporting materials, hole-blocking materials, highly electron-transporting materials , a substance with high electron injection properties, or a bipolar substance (a substance with high electron transport properties and hole transport properties) The film may further include a layer containing a material such as a polymer.

[0131] The EL layer 833 can be made of either a low molecular weight compound or a high molecular weight compound. The layers constituting the EL layer 833 may each be formed by evaporation (vacuum evaporation). The method may include a transfer method, a printing method, an ink jet method, a coating method, etc. do.

[0132] The light-emitting element 830 may contain two or more types of luminescent materials. For example, it is possible to realize a light-emitting element that emits color light. White light can be obtained by selecting luminescent materials so that they have a complementary color relationship. For example, a light-emitting object that emits light such as R (red), G (green), B (blue), Y (yellow), or O (orange). It uses a material that emits light containing two or more of the R, G, and B spectral components. For example, a light-emitting material that emits blue light and a light-emitting material that emits yellow light can be used. In this case, the emission spectrum of the luminescent material that emits yellow light is composed of green and red spectral components. It is preferable that the light emitting element 830 has an emission spectrum in the visible region ( For example, the range of 350 nm to 750 nm, or 400 nm to 800 nm, etc. It is preferable that the spectrum has two or more peaks.

[0133] The EL layer 833 may have a plurality of light-emitting layers. The layers may be stacked in contact with each other or with a separating layer interposed therebetween. For example, a separation layer may be provided between the fluorescent-emitting layer and the phosphorescent-emitting layer.

[0134] The separation layer is used to convert, for example, the excited state of a phosphorescent material generated in the phosphorescent-emitting layer into the fluorescent material in the fluorescent-emitting layer. Prevents energy transfer (especially triplet energy transfer) to optical materials via the Dexter mechanism The separation layer only needs to be a few nanometers thick. 1 nm to 20 nm, or 1 nm to 10 nm, or 1 nm to 5 nm The separating layer may be a single material (preferably a bipolar material) or a plurality of materials. (preferably a hole transporting material and an electron transporting material).

[0135] The separation layer may be formed using a material contained in the light-emitting layer that is in contact with the separation layer. This facilitates the fabrication of the light-emitting device and reduces the driving voltage. When the separation layer is made of a host material, an assist material, and a phosphorescent material (guest material), In other words, the separation layer may be formed of a phosphorescent material and an assist material. The phosphorescent layer has a region that does not contain the material, and the phosphorescent layer has a region that contains the phosphorescent material. The separation layer and the phosphorescent layer can be deposited with or without a phosphorescent material. This configuration makes it possible to form the separation layer and the phosphorescent layer in the same chamber. This allows the manufacturing costs to be reduced.

[0136] The light-emitting element 830 may be a single element having one EL layer, or may be a charge-generating element. The device may be a tandem device having a plurality of EL layers stacked with an intervening layer.

[0137] It is preferable that the light emitting element is provided between a pair of highly moisture-proof insulating films. This can prevent impurities such as moisture from entering the light emitting element, and can prevent a decrease in the reliability of the light emitting device. It can be controlled.

[0138] The insulating layer 815 may be, for example, a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film. An inorganic insulating film such as a rubber film can be used. The insulating layer 817b may be made of, for example, polyimide, acrylic, polyamide, or polyimide acryl. Organic materials such as amide and benzocyclobutene resins can be used. A dielectric constant material (low-k material) can be used. Also, multiple insulating films can be stacked. Each insulating layer may be formed by this method.

[0139] The insulating layer 821 is formed using an organic insulating material or an inorganic insulating material. For example, polyimide resin, polyamide resin, acrylic resin, siloxane resin, epoxy Resin, phenolic resin, etc. can be used. In particular, a photosensitive resin material is used, and the lower An opening is formed on the electrode 831, and the sidewall of the insulating layer 821 is formed as an inclined surface having a curvature. It is preferable to form it so that

[0140] The method for forming the insulating layer 821 is not particularly limited, but may be a photolithography method, a sputtering method, Vapor deposition method, droplet ejection method (inkjet method, etc.), printing method (screen printing, offset printing) etc.) can be used.

[0141] The spacer 823 can be formed using an inorganic insulating material, an organic insulating material, a metal material, or the like. For example, inorganic insulating materials and organic insulating materials can be used for the insulating layer. Various materials can be used. Metal materials include titanium and aluminum. The spacer 823 containing a conductive material and the upper electrode 835 are electrically connected to each other. This can suppress the potential drop caused by the resistance of the upper electrode 835. The shape of the 3 may be either a forward tapered shape or a reverse tapered shape.

[0142] It is used in a light-emitting device and functions as an electrode or wiring of a transistor, an auxiliary electrode of a light-emitting element, or the like. The conductive layer may be made of, for example, molybdenum, titanium, chromium, tantalum, tungsten, or aluminum. Uses metal materials such as ammonium, copper, neodymium, scandium, etc., or alloy materials containing these elements. The conductive layer can be formed as a single layer or a stacked layer. The conductive metal oxide may be indium oxide (In2O3, etc.), Tin oxide (SnO2, etc.), ZnO, ITO, indium zinc oxide (In2O3-ZnO etc.) or a material obtained by adding silicon oxide to these metal oxide materials can be used.

[0143] The colored layer is a colored layer that transmits light in a specific wavelength band. For example, A red (R) color filter transmits light in the green wavelength band, and a green (G) color filter transmits light in the green wavelength band. A blue (B) color filter transmits light in the blue wavelength band, and a yellow wavelength band. A yellow (Y) color filter that transmits light can be used. Using various materials, etching using printing, inkjet, and photolithography methods The white sub-pixels are formed at the desired positions by a method such as a masking method. A transparent or white resin may be placed thereon.

[0144] The light-shielding layer is provided between adjacent colored layers. The light-shielding layer blocks light from the adjacent light-emitting element. The colored layer is formed on the edge of the light-shielding layer, and the colored layer is formed on the edge of the light-shielding layer, thereby suppressing color mixing between adjacent light-emitting elements. By providing the light-shielding layer so that it overlaps with the light-shielding layer, it is possible to suppress light leakage. Materials that block light emitted from the optical element can be used, including, for example, metallic materials, pigments, and dyes. The black matrix may be formed using a resin material. By placing it in an area other than the light-emitting part, unintended light leakage due to guided light etc. can be suppressed. preferable.

[0145] An overcoat may be provided to cover the colored layer and the light-shielding layer. This makes it possible to prevent impurities contained in the colored layer from diffusing into the light emitting element. The bar coat is made of a material that transmits light emitted from the light emitting element, such as a silicon nitride film. , inorganic insulating films such as silicon oxide films, or organic insulating films such as acrylic films and polyimide films. It may also have a laminated structure of an organic insulating film and an inorganic insulating film.

[0146] In addition, when the material for the adhesive layer is applied onto the colored layer and the light-shielding layer, the material for the overcoat is It is preferable to use a material that has high wettability with respect to the material of the adhesive layer. As the substrate, oxide conductive films such as ITO films and metal films such as Ag films that are thin enough to be transparent are used. It is preferable to use

[0147] As a connector, various anisotropic conductive films (ACF) Conductive Film) and Anisotropic Conductive Paste (ACP) Conductive Paste) can be used.

[0148] Note that although the light-emitting device has been described as an example in this embodiment, one embodiment of the present invention can be applied to a semiconductor device, The present invention can be applied to various devices such as display devices and input / output devices.

[0149] In this specification, the term "display element," "display device having a display element," "light-emitting element," and A light-emitting device, which is a device having a light-emitting element, can be formed in various forms or can have various elements. The display element, the display device, the light-emitting element or the light-emitting device can be, for example, an EL element ( EL elements containing organic and inorganic materials, organic EL elements, inorganic EL elements), LEDs (white LEDs) , red LED, green LED, blue LED, etc.), transistors (transistors that emit light according to the current Transistors), electron emission elements, liquid crystal elements, electronic ink, electrophoretic elements, grating lines Light bulbs (GLV), plasma display panels (PDP), MEMS (microelectromechanical systems) Display elements using electro-mechanical systems, digital micromirror devices DMD (Digital Micro Shutter), DMS (Digital Micro Shutter), Interferometric Modulation (IMOD) element , shutter-type MEMS display elements, optical interference-type MEMS display elements, electrowe display elements, piezoelectric ceramic displays, and carbon nanotube-based display elements In addition to these, there are also other types of The EL element may have a display medium that changes contrast, brightness, reflectance, transmittance, etc. An example of a display device using electron-emitting devices is an EL display. An example of such a display device is a field emission display (FED) or SED. Flat panel display (SED: Surface-conduction Elect One of the display devices using liquid crystal elements is the Examples include LCD displays (transmissive LCDs, semi-transmissive LCDs, reflective LCD displays, direct-view LCD displays, and projection LCD displays. An example of a display device using electronic ink, electronic liquid powder (registered trademark), or electrophoretic elements is shown below. Examples include electronic paper. When realizing a play, a part or all of the pixel electrodes have a function as a reflective electrode. For example, a part or all of the pixel electrodes may contain aluminum, silver, etc. Furthermore, in this case, a memory circuit such as an SRAM may be provided under the reflective electrode. This can further reduce power consumption. When using ED, graphene or graphite is placed under the LED electrodes or nitride semiconductor. Graphene or graphite may be formed into a multilayer film by stacking multiple layers. In this way, by providing graphene or graphite, it is possible to form nitride semiconductors on it. For example, it is possible to easily form a crystalline n-type GaN semiconductor layer. An LED can be constructed by providing a p-type GaN semiconductor layer with crystals on top of it. In addition, the graphene or graphite is interposed between the n-type GaN semiconductor layer having a crystal structure. A GaN layer may be provided. The GaN semiconductor layer of the LED is formed by MOCVD. However, by providing graphene, the GaN semiconductor layer of the LED can be It is also possible to form the film by sputtering.

[0150] For example, in this specification, a pixel having an active element (active element, nonlinear element) It uses an active matrix system or a passive matrix system that does not have active elements in the pixels. You can be there.

[0151] In the active matrix system, various active elements, not just transistors, are used. Active elements can be used. For example, MIM (Metal Insulator Metal etal) or TFD (Thin Film Diode) can also be used. These elements have fewer manufacturing steps, which reduces manufacturing costs and improves yields. Furthermore, since these elements are small in size, the aperture ratio can be improved. This allows for lower power consumption and higher brightness.

[0152] The passive matrix method does not use active elements, so there are fewer manufacturing processes and manufacturing costs are lower. It is possible to reduce the cost and improve the yield. The brightness can be improved, and it is possible to achieve low power consumption or high brightness.

[0153] Note that the light-emitting device of one embodiment of the present invention may be used as a display device or a lighting device. For example, a light source such as a backlight or a frontlight, that is, a light source of a display panel It may also be used as a lighting device for

[0154] As described above in this embodiment, the light-emitting device of one embodiment of the present invention has a pair of substrates each having a thickness of 1000 μm. By aligning the materials, even if different materials are used for one substrate and the other, the development will be stable regardless of the storage environment. Warping and distortion of the light emitting device can be suppressed. By suppressing warping and distortion of the light emitting device, This can prevent degradation of display quality of light-emitting devices and the occurrence of cracks within the light-emitting devices, improving reliability. In addition, one substrate and the other substrate can be made of a material with the required properties. This allows for a wider range of material choices. This allows for the realization of this position.

[0155] This embodiment mode can be combined with other embodiment modes as appropriate.

[0156] (Embodiment 2) In this embodiment, an input / output device of one embodiment of the present invention will be described with reference to drawings. Among the components included in the input / output device, the same components as those of the light-emitting device described in Embodiment 1 For details, the above description can be referred to. For example, the input / output device exemplified in the first embodiment may be an input / output device other than the input / output device exemplified in the first embodiment. An input / output device using an element (such as a display element) is also one embodiment of the present invention. The input / output device described above can also be called a touch panel.

[0157] In the input / output device of one embodiment of the present invention, the thicknesses of the pair of substrates are made the same, so that the thickness of one substrate and the other substrate can be uniform. Even if different materials are used for the substrate, warping and distortion of the input / output device can be suppressed regardless of the storage environment. By suppressing the warping and distortion of the input / output device, the display quality and detection sensitivity of the input / output device can be improved. This can prevent deterioration of the input / output device and cracks from occurring, improving reliability. In addition, the substrates on one side and the other side can be made of materials with the required properties. This allows for a wider range of material choices, and also allows for the realization of input / output devices that are resistant to repeated bending. It is possible.

[0158] <Configuration example 1> FIG. 4(A) is a top view of the input / output device. FIG. 4(B) is a diagram showing the area between the dashed dotted line AB in FIG. 4(C) is a cross-sectional view taken along the dashed line EF in FIG. 4(A). Figure.

[0159] The input / output device 390 shown in FIG. 4A includes a display unit 301 (which also serves as an input unit), a scanning line driving circuit, and circuit 303g(1), imaging pixel driving circuit 303g(2), image signal line driving circuit 303s(1 ), and an imaging signal line driving circuit 303s(2).

[0160] The display unit 301 includes a plurality of pixels 302 and a plurality of imaging pixels 308 .

[0161] The pixel 302 has a plurality of sub-pixels (for example, sub-pixel 302R). and a pixel circuit.

[0162] The pixel circuit can supply power to drive the light emitting element. The pixel circuit is electrically connected to a wiring that can supply an image signal. The wiring is electrically connected to the wiring.

[0163] The scanning line driver circuit 303g(1) can supply a selection signal to the pixel 302.

[0164] The image signal line driver circuit 303s(1) can supply image signals to the pixels 302.

[0165] A touch sensor can be configured using the imaging pixels 308. 08 can detect a finger or the like touching the display unit 301.

[0166] The imaging pixel 308 includes a photoelectric conversion element and an imaging pixel circuit.

[0167] The imaging pixel circuit can drive the photoelectric conversion element. The imaging pixel circuit provides a control signal. The imaging pixel circuit is electrically connected to a wiring that can supply a power supply potential. The wiring can be electrically connected to the wiring.

[0168] The control signal may be, for example, a signal to select an imaging pixel circuit that reads out a recorded imaging signal. a signal that can initialize the imaging pixel circuit, and a signal that can initialize the imaging pixel circuit Examples of such signals include signals that can determine the time at which the signal is detected.

[0169] The imaging pixel drive circuit 303g(2) can supply control signals to the imaging pixels 308. .

[0170] The imaging signal line driving circuit 303s(2) can read out imaging signals.

[0171] As shown in FIGS. 4B and 4C, the input / output device 390 includes a substrate 101, an adhesive layer 103, an insulating layer 104, and a The substrate 101 includes an edge layer 105, a substrate 111, an adhesive layer 113, and an insulating layer 115. and substrate 111 are bonded together with adhesive layer 360 .

[0172] The substrate 101 and the insulating layer 105 are bonded together with an adhesive layer 103. The edge layer 115 is attached by an adhesive layer 113. For materials that can be used, see embodiment 1.

[0173] The pixel 302 includes a subpixel 302R, a subpixel 302G, and a subpixel 302B (see FIG. 4( C)). The subpixel 302R has a light-emitting module 380R, and the subpixel 302G has a light-emitting The subpixel 302B has a light-emitting module 380G, and the subpixel 302B has a light-emitting module 380B.

[0174] For example, the sub-pixel 302R includes a light-emitting element 350R and a pixel circuit. The light emitting module 300R includes a transistor 302t that can supply power to the light emitting module 350R. The module 380R includes a light emitting element 350R and an optical element (for example, a colored layer 3 67R).

[0175] The light emitting element 350R comprises a lower electrode 351R, an EL layer 353, and an upper electrode 352 in this order. They are stacked (Figure 4(C)).

[0176] The EL layer 353 includes a first EL layer 353a, an intermediate layer 354, and a second EL layer 353b. The layers are stacked in this order.

[0177] In order to efficiently extract light of a specific wavelength, the light emitting module 380R is equipped with a micro Specifically, a cavity structure can be provided to efficiently extract specific light. Even if an EL layer is placed between a film that reflects visible light and a film that is semi-reflective and semi-transmissive, good.

[0178] For example, the light emitting module 380R includes an adhesive layer in contact with the light emitting element 350R and the color layer 367R. It has 360.

[0179] The colored layer 367R is located so as to overlap the light emitting element 350R. A part of the light emitted by the adhesive layer 360 passes through the colored layer 367R and the adhesive layer 360, and is reflected by the adhesive layer 360 as shown by the arrows in the figure. The light is emitted to the outside of the light emitting module 380R as shown.

[0180] The input / output device 390 has a light-shielding layer 367BM. The light-shielding layer 367BM is a colored layer (for example The colored layer 367R is provided so as to surround the colored layer 367R.

[0181] The input / output device 390 has an anti-reflection layer 367p at a position overlapping the display unit 301. The stop layer 367p may be, for example, a circular polarizer.

[0182] The substrate 111 is a substrate from which light from the light emitting element is extracted. The average transmittance in the wavelength range of 400 nm to 800 nm is higher than that of the plate 101. preferable.

[0183] The substrate 101 is the substrate on which the FPC is pressure-bonded. It is preferable that the glass transition temperature is higher than that of 11.

[0184] In the input / output device according to one embodiment of the present invention, the sum of the thicknesses of the substrate 101 and the adhesive layer 103 and the thickness of the substrate 11 The sum of the thicknesses of the substrate 101 and the adhesive layer 113 may be the same. The sum of the thicknesses of the substrate 111, the adhesive layer 113, and the anti-reflection layer 367p may be the same. stomach.

[0185] The input / output device 390 includes an insulating layer 321. The insulating layer 321 is a layer that covers the transistor 302t and the like. The insulating layer 321 flattens the unevenness caused by the pixel circuits and the imaging pixel circuits. It can be used as a layer for preventing the diffusion of impurities into the transistor 302t, etc. An insulating layer laminated with a suppressible layer can be applied to the insulating layer 321 .

[0186] The input / output device 390 has a partition wall 328 that overlaps the end of the lower electrode 351R. A spacer 329 for controlling the distance between the substrate 111 and the substrate 101 is provided on the partition wall 328 .

[0187] The image signal line driver circuit 303s(1) includes a transistor 303t and a capacitor 303c. The driver circuit can be formed on the same substrate as the pixel circuit in the same process. As shown in FIG. 3, the transistor 303t has a second gate 304 on the insulating layer 321. The second gate 304 is electrically connected to the gate of the transistor 303t. Alternatively, different potentials may be applied to these. The gate 304 may be provided to the transistor 308t, the transistor 302t, and so on.

[0188] The imaging pixel 308 includes a photoelectric conversion element 308p and an imaging pixel circuit. The photoelectric conversion element 308p can detect light incident thereon. Includes Zista 308t.

[0189] For example, a pin-type photodiode can be used as the photoelectric conversion element 308p.

[0190] The input / output device 390 has a wiring 311 through which a signal can be supplied, and a terminal 319 311. Signals such as image signals and synchronization signals can be supplied. The FPC 309 is electrically connected to the terminal 319. The FPC 309 has a printed A printed wiring board (PWB) may be attached.

[0191] In addition, transistors such as transistor 302t, transistor 303t, and transistor 308t The resistors can be formed in the same process, or they can be formed in different processes. Good too.

[0192] <Configuration example 2> 5(A) and (B) are perspective views of the input / output device 505. For clarity, a representative 6 shows the components. Fig. 6 is a cross-sectional view taken along the dashed line X1-X2 shown in Fig. 5(A).

[0193] As shown in FIGS. 5A and 5B, the input / output device 505 includes a display unit 501, a scanning line driving circuit, 303g(1), and a touch sensor 595. The input / output device 505 is also 101, a substrate 111, and a substrate 590.

[0194] The substrate 111 and the substrate 590 are substrates from which light from the light-emitting element is extracted. The plate 111 has a higher average transmittance than the substrate 101 in the wavelength range of 400 nm to 800 nm. In addition, the substrate 590 has a higher average light intensity than the substrate 101 at wavelengths of 400 nm or more. It is preferable that the average transmittance at 800 nm or less is high.

[0195] The input / output device 505 includes a plurality of pixels and a plurality of wirings 311. The plurality of wirings 311 include: A signal can be supplied to the pixel. The wiring 311 is laid out to the outer periphery of the substrate 101. The terminal 319 is connected to the FPC 509(1) and a part of it forms the terminal 319. Connect emotionally.

[0196] The input / output device 505 includes a touch sensor 595 and a plurality of wirings 598. 98 is electrically connected to the touch sensor 595. A plurality of wirings 598 are provided on the outside of the substrate 590. The terminal is FPC509(2) In FIG. 5B, for clarity, the back side of the substrate 590 (substrate Electrodes and wiring of the touch sensor 595 provided on the surface opposite to the touch sensor 101 are shown by solid lines. There are.

[0197] The touch sensor 595 may be, for example, a capacitance type touch sensor. There are various types of capacitive touch sensors, such as surface capacitive touch sensors and projected capacitive touch sensors. This shows a case where a capacitive touch sensor is applied.

[0198] The projected capacitive touch panel is classified into two types: self-capacitance type and mutual-capacitance type. The use of such a method is preferable because it enables simultaneous multipoint detection.

[0199] The touch sensor 595 can detect the proximity or contact of a detection object such as a finger. Various sensors can be applied.

[0200] The projected capacitive touch sensor 595 has an electrode 591 and an electrode 592. 91 is electrically connected to one of the plurality of wirings 598, and the electrode 592 is electrically connect to one of the others.

[0201] As shown in FIGS. 5(A) and 5(B), the electrode 592 is a plurality of four electrodes repeatedly arranged in one direction. It has a shape in which sides are connected at the corners.

[0202] The electrode 591 is quadrilateral and is repeatedly arranged in a direction intersecting the direction in which the electrode 592 extends. The plurality of electrodes 591 are not necessarily arranged in a direction perpendicular to one electrode 592. The angle need not be 90 degrees, but may be less than 90 degrees.

[0203] The wiring 594 is provided so as to intersect with the electrodes 592. The wiring 594 connects one of the electrodes 592 to the The two sandwiching electrodes 591 are electrically connected. At this time, the intersection of the electrode 592 and the wiring 594 It is preferable that the area of ​​the electrode be as small as possible. As a result, the area of ​​the transparent region can be reduced, and the unevenness of the transmittance can be reduced. This can reduce uneven brightness of the light that is emitted.

[0204] The shapes of the electrodes 591 and 592 are not limited to this, and various shapes are possible. For example, A plurality of strip-shaped first electrodes are arranged with as few gaps as possible, and the strips are connected to each other via an insulating layer. A plurality of second electrodes having a rectangular shape are arranged so as to intersect with the first electrodes. The second electrodes may be configured to be spaced apart. In this case, two adjacent second electrodes If a dummy electrode electrically isolated from these is provided between the two, the surface of the area with different transmittance can be This is preferable because it can reduce the product.

[0205] As shown in FIG. 6A, the input / output device 505 includes a substrate 101, an adhesive layer 103, an insulating layer 104, and a 5, a substrate 111, an adhesive layer 113, and an insulating layer 115. 111 are bonded together with an adhesive layer 360.

[0206] The adhesive layer 597 adheres the substrate 590 to the substrate 590 so that the touch sensor 595 overlaps the display unit 501. The adhesive layer 597 is attached to the substrate 111. The adhesive layer 597 is light-transmitting.

[0207] The electrode 591 and the electrode 592 are formed using a light-transmitting conductive material. Conductive materials that can be used include indium oxide, indium tin oxide, indium zinc oxide, Conductive oxides such as zinc oxide and zinc oxide doped with gallium can be used. Alternatively, a film containing graphene may be used. The film containing graphene may be formed in a film shape, for example. The film containing graphene oxide can be formed by reducing the film. and methods of applying heat.

[0208] In addition, conductive films such as electrodes 591, electrodes 592, and wiring 594, that is, the touch panel, are formed. It is desirable that the resistance of the material used for the wiring and electrodes be low. Sodium zinc oxide, ZnO, silver, copper, aluminum, carbon nanotubes, graphene Furthermore, a large number of very thin (for example, a diameter of a few nanometers) Metal nanowires made of conductors such as Ag may also be used. Alternatively, a nanowire, a Cu nanowire, or an Al nanowire may be used. In the case of an Ag nanowire, For example, it achieves a light transmittance of 89% or more and a sheet resistance of 40 Ω / □ to 100 Ω / □. In addition, since the transmittance is high, it is possible to use the electrode used in the display element, for example, the pixel electrode Metal nanowires, carbon nanotubes, graphene, etc. may be used for the electrode and the common electrode. .

[0209] After forming a film of a light-transmitting conductive material on a substrate 590 by a sputtering method, By using various patterning techniques such as lithography, unnecessary parts are removed to form the electrode 591. and electrode 592 can be formed.

[0210] The electrodes 591 and 592 are covered with an insulating layer 593. An opening is provided in the insulating layer 593, and a wiring 594 electrically connects the adjacent electrodes 591. The photoconductive material is suitable for the wiring 594 because it can increase the aperture ratio of the input / output device. In addition, a material having higher conductivity than the electrodes 591 and 592 can be used for Since the resistance can be reduced, it can be suitably used for the wiring 594 .

[0211] Note that an insulating layer is provided to cover the insulating layer 593 and the wiring 594 to protect the touch sensor 595. It is possible.

[0212] Furthermore, the connection layer 599 electrically connects the wiring 598 and the FPC 509(2).

[0213] The display unit 501 has a plurality of pixels arranged in a matrix. Since the details are similar, the explanation will be omitted.

[0214] Various transistors can be applied to the input / output device. The configuration when this is applied is shown in Figures 6(A) and (B).

[0215] For example, a semiconductor layer containing an oxide semiconductor, amorphous silicon, or the like is formed as shown in FIG. This can be applied to the transistor 302t and the transistor 303t.

[0216] For example, a semiconductor layer containing polycrystalline silicon crystallized by a process such as laser annealing. can be applied to the transistor 302t and the transistor 303t shown in FIG. can.

[0217] FIG. 6C shows a structure in which a top-gate transistor is used.

[0218] For example, polycrystalline silicon or a single crystal silicon film transferred from a single crystal silicon substrate, etc. The semiconductor layer containing can be applied.

[0219] <Configuration example 3> 7 is a cross-sectional view of the input / output device 505B. B is a point where the supplied image information is displayed on the side where the transistor is provided and a touch sensor. The difference from the input / output device 505 of the second configuration example is that the sensor is provided on the substrate 101 side of the display unit. Here, the different configurations are described in detail, and where similar configurations can be used, The above explanation is incorporated herein.

[0220] The colored layer 367R is located at a position overlapping the light emitting element 350R. The element 350R emits light toward the side where the transistor 302t is provided. A part of the light emitted by the light emitting element 350R passes through the colored layer 367R and is emitted in the direction of the arrow shown in the figure. The light is emitted to the outside of the light emitting module 380R.

[0221] The input / output device 505B has a light-shielding layer 367BM in the light-emitting direction. M is provided so as to surround a colored layer (for example, colored layer 367R).

[0222] The touch sensor 595 is provided on the substrate 101 side, not on the substrate 111 side (FIG. 7(A) )).

[0223] The substrate 101 and the substrate 590 are substrates from which light from the light-emitting element is extracted. The plate 101 has a higher average transmittance than the substrate 111 in the wavelength range of 400 nm to 800 nm. In addition, the substrate 590 has a wavelength of 400 nm or more higher than the substrate 111. It is preferable that the average transmittance at 800 nm or less is high.

[0224] The adhesive layer 597 adheres the substrate 590 to the substrate 101 so that the touch sensor 595 overlaps the display unit. The adhesive layer 597 is light-transmitting.

[0225] The configuration in which a bottom gate type transistor is applied to the display unit 501 is shown in FIG. ), as shown in (B).

[0226] For example, a semiconductor layer containing an oxide semiconductor, amorphous silicon, or the like is formed as shown in FIG. This can be applied to the transistor 302t and the transistor 303t.

[0227] For example, a semiconductor layer containing polycrystalline silicon or the like is used for the transistor 302t and the transistor 302f shown in FIG. The present invention can be applied to the transistor 303t.

[0228] FIG. 7C shows a structure in the case where a top-gate transistor is used.

[0229] For example, polycrystalline silicon or a single crystal silicon film transferred from a single crystal silicon substrate may be used. The semiconductor layer containing the SiO 2 is applied to the transistor 302t and the transistor 303t shown in FIG. It is possible.

[0230] <Configuration Example 4> As shown in FIG. 8, the input / output device 500TP has a display unit 500 and an input unit 600 overlapped with each other. 9 is a cross-sectional view taken along the dashed line Z1-Z2 shown in FIG.

[0231] The individual elements that make up the input / output device 500TP will be described below. The components cannot be clearly separated, and one component may serve as another component or may contain parts of another component. In addition, when the input / output device 500TP in which the input unit 600 is superimposed on the display unit 500 is touched, Also called chipanel.

[0232] The input section 600 has a plurality of detection units 602 arranged in a matrix. The input section 600 includes a selection signal line G1, a control line RES, a signal line DL, and the like.

[0233] The selection signal line G1 and the control line RES are connected to a plurality of detection lines arranged in the row direction (indicated by the arrow R in the figure). The signal line DL is electrically connected to the sensing unit 602 in the column direction (indicated by the arrow C in the figure). The sensor 602 is electrically connected to a plurality of sensing units 602 arranged in the same direction.

[0234] The detection unit 602 detects proximity or contact and provides a detection signal. Detects capacitance, illuminance, magnetic force, radio waves, pressure, etc., and provides information based on the detected physical quantity Specifically, the sensing element may be a capacitance element, a photoelectric conversion element, a magnetic sensing element, a piezoelectric element, a resonator, or the like. It can be used for children.

[0235] The detection unit 602 detects, for example, a change in capacitance between an object in proximity or in contact with the object. do.

[0236] In addition, when an object with a higher dielectric constant than the air, such as a finger, comes close to the conductive film in the air, When the finger is touched, the capacitance between the finger and the conductive film changes. This change in capacitance is detected and the detection information is provided. can be provided.

[0237] For example, a change in capacitance causes charge distribution, resulting in a voltage drop across the electrodes of the capacitance element. This change in voltage can be used as a detection signal.

[0238] The detection unit 602 includes a detection circuit, which is connected to a selection signal line G1, a control line RES, or is electrically connected to a signal line DL or the like.

[0239] The detection circuit includes a transistor and / or a detection element. A capacitor element electrically connected to the film can be used in the detection circuit. and a transistor electrically connected to the capacitor can be used in a detection circuit. do.

[0240] The detection circuit includes, for example, an insulating layer 653, a first electrode 651 sandwiching the insulating layer 653, and A capacitor 650 having a second electrode 652 can be used (FIG. 9). The voltage between the electrodes of 650 is increased by the proximity of an object to a conductive film electrically connected to one of the electrodes. More change.

[0241] The sensing unit 602 can be made conductive or non-conductive based on the control signal. For example, the transistor M12 can be used as the switch.

[0242] Additionally, a transistor for amplifying the detection signal can be used in the detection unit 602 .

[0243] The transistors that can be manufactured in the same process are the transistors that amplify the detection signal and the This allows the input unit 600 to be manufactured in a simplified manner. We can provide it.

[0244] The detection unit also has a plurality of windows 667 arranged in a matrix. The window portions 667 transmit visible light, and a light-shielding layer 367BM may be disposed between the plurality of window portions 667.

[0245] The input / output device 500TP has a colored layer at a position overlapping the window portion 667. The colored layer has a predetermined The colored layer can be called a color filter. For example, blue light A colored layer 367B that transmits light, a colored layer 367G that transmits green light, or a colored layer 367G that transmits red light A colored layer 367R that transmits yellow light or a colored layer that transmits white light may be used. A colored layer that transmits light may also be used.

[0246] The display unit 500 has a plurality of pixels 302 arranged in a matrix. The pixel 302 is arranged so as to overlap with the window portion 667 of the sensing unit 600. The pixels may be arranged with higher resolution than those in Example 02. is omitted.

[0247] The substrate 111 is a substrate from which light from the light emitting element is extracted. The average transmittance in the wavelength range of 400 nm to 800 nm is higher than that of the plate 101. preferable.

[0248] The input / output device 500TP has a window 667 that transmits visible light and multiple The input section 600 has a number of detection units 602, and the pixels 302 overlapping the window section 667 are and a display unit 500 having a colored layer between the window portion 667 and the pixel 302. In addition, each detection unit can reduce interference with other detection units. A switch is provided.

[0249] This allows the detection information detected by each detection unit to be supplied together with the position information of the detection unit. In addition, the detection information can be supplied in association with the position information of the pixels that display the image. In addition, the detection unit that does not supply the detection information and the signal line are put into a non-conductive state. This reduces interference with the detection unit that supplies the detection signal. Therefore, it is possible to provide a novel input / output device 500TP that is highly convenient and reliable.

[0250] For example, the input unit 600 of the input / output device 500TP detects the detection information and supplies it together with the position information. Specifically, the user of the input / output device 500TP touches the input unit 600. Use your finger as a pointer to perform various gestures (tap, drag, swipe, or pinch) You can do this (in, etc.).

[0251] The input unit 600 detects a finger or the like approaching or touching the input unit 600, and stores the detected position or trajectory. It is possible to provide sensing information including traces and the like.

[0252] The computing device determines whether the supplied information satisfies a predetermined condition based on a program or the like. , executes the command associated with the given gesture.

[0253] This allows the user of the input unit 600 to provide a predetermined gesture using a finger or the like, The computing device can then be caused to execute a command associated with the gesture.

[0254] For example, the input unit 600 of the input / output device 500TP first supplies detection information to one signal line. A detection unit X is selected from the plurality of detection units that can be used. The signal line of the other detection units except for unit X is put into a non-conductive state. Interference to the detection unit X caused by other detection units can be reduced.

[0255] Specifically, interference with the detection elements of detection unit X caused by the detection elements of other detection units. can be reduced.

[0256] For example, a capacitance element and a conductive film to which one electrode of the capacitance element is electrically connected are connected to a detection element. In this case, the potential of the conductive film of the other detection unit causes the conduction of the detection unit X. This reduces interference with the potential of the conductive membrane.

[0257] This allows the input / output device 500TP to drive the detection unit without relying on its size. For example, it can be used in handheld devices. Various sizes of input / output devices are available, from those that can be used as a notebook to those that can be used as an electronic whiteboard. A device 500TP can be provided.

[0258] The input / output device 500TP can be folded and unfolded. Then, in the folded and unfolded states, the detection provided by the other detection units is Even if the interference to unit X is different, it depends on the state of input / output device 500TP. The detection unit can be driven to supply detection information without any need for a power supply.

[0259] Also, the display unit 500 of the input / output device 500TP can be supplied with display information. For example, the computing device can provide the display information.

[0260] In addition to the above configuration, the input / output device 500TP can also have the following configuration.

[0261] The input / output device 500TP may include a driver circuit 603g or a driver circuit 603d. The input / output device 500TP (or a drive circuit) may be electrically connected to the FPC1.

[0262] The drive circuit 603g can supply a selection signal at a predetermined timing, for example. The selection signal is supplied to each selection signal line G1 in a predetermined order. It can be used in the driver circuit 603g. For example, a shift register, a flip-flop circuit, A circuit, a combinational circuit, etc. can be used.

[0263] The driving circuit 603d supplies detection information based on the detection signal supplied by the detection unit 602. In addition, various circuits can be used for the driving circuit 603d. For example, By electrically connecting the detection circuit arranged in the unit, a source follower circuit and a A circuit that can configure a center mirror circuit can be used as the driver circuit 603d. The sensor may also have an analog-to-digital conversion circuit that converts the detection signal into a digital signal. stomach.

[0264] The FPC 1 supplies timing signals, power supply potential, etc., and is supplied with detection signals.

[0265] The input / output device 500TP includes a drive circuit 503g, a drive circuit 503s, a wiring 311, or a terminal 319. The input / output device 500TP (or the drive circuit) may have a They may also be electrically connected.

[0266] In addition, a protective layer 670 may be provided to protect the input / output device 500TP by preventing scratches. For example, a ceramic coating layer or a hard coating layer can be used for the protective layer 670. Specifically, a layer containing aluminum oxide or a UV curable resin can be used.

[0267] When realizing a semi-transmissive or reflective LCD display, the pixel voltage A part or all of the electrode may be made to function as a reflective electrode. A part or all of the element electrodes may be made of aluminum, silver, or the like.

[0268] It is also possible to provide a memory circuit such as an SRAM under the reflective electrode. Furthermore, it is possible to reduce power consumption. A variety of pixel circuits can be selected and used.

[0269] This embodiment mode can be combined with other embodiment modes as appropriate.

[0270] (Embodiment 3) In this embodiment, electronic devices and lighting devices according to embodiments of the present invention will be described with reference to drawings. do.

[0271] By applying one embodiment of the present invention, it is possible to reduce the weight, thickness, and flexibility of electronic devices and lighting devices. For example, the light-emitting device shown in Embodiment 1 (or a display device using a light-emitting element) can be The input / output device shown in Embodiment 2 can be used as a flexible display portion or The present invention can be applied to flexible light-emitting parts in lighting devices.

[0272] Examples of electronic devices include television sets (also known as televisions or television receivers). (c), computer monitors, digital cameras, digital video cameras, and other cameras , digital photo frames, mobile phones (also called mobile phones or mobile phone devices), portable games Examples include gaming machines, mobile information terminals, sound reproduction devices, and large game machines such as pachinko machines. .

[0273] Furthermore, since the electronic device or lighting device of one embodiment of the present invention is flexible, it can be easily mounted on the interior walls of houses or buildings. Or it can be incorporated into the exterior wall or along the curved surface of the interior or exterior of a car. do.

[0274] Further, an electronic device of one embodiment of the present invention includes a light-emitting device or an input / output device and a secondary battery. At this time, the secondary battery can be charged using non-contact power transmission. This is preferable.

[0275] As the secondary battery, for example, a lithium polymer battery (lithium ion battery) using a gel electrolyte is used. Lithium-ion secondary batteries such as lithium polymer batteries, nickel-metal hydride batteries, nickel-cadmium batteries, organic Examples include nickel-zinc batteries, lead-acid batteries, air secondary batteries, nickel-zinc batteries, and silver-zinc batteries. .

[0276] An electronic device of one embodiment of the present invention includes a light-emitting device or an input / output device, an antenna, a secondary battery, and By receiving a signal through the antenna, an image, information, etc. may be displayed on the display unit. In addition, when the electronic device has a secondary battery, the antenna can be connected to a wireless power source. It may also be used for transmission.

[0277] FIG. 10A shows an example of a mobile phone. The mobile phone 7400 has a housing 7401. In addition to the display unit 7402 incorporated in the The mobile phone 7400 is equipped with a speaker 7405, a microphone 7406, etc. The light-emitting device or the input / output device according to one embodiment of the present invention is used for the display portion 7402. According to one aspect of the present invention, a highly reliable mobile phone having a curved display can be easily carried. It can be provided with good retention.

[0278] In the mobile phone 7400 shown in FIG. 10A, when a user touches the display portion 7402 with a finger or the like, information is displayed. You can also make calls, enter text, or do any other actions. An operation can be performed by touching the display portion 7402 with a finger or the like.

[0279] In addition, by operating the operation button 7403, the power can be turned on and off, and the display unit 7402 can be You can change the type of image displayed. For example, from the email creation screen, you can change the main image. You can switch to the menu screen.

[0280] FIG. 10B shows an example of a wristwatch-type portable information terminal. The portable information terminal 7100 is , a housing 7101, a display unit 7102, a band 7103, a buckle 7104, and an operation button 71 05, input / output terminal 7106, etc.

[0281] The mobile information terminal 7100 is capable of performing functions such as mobile phone calls, e-mails, document viewing and creation, music playback, and internet access. - It can run various applications such as internet communication and computer games. do.

[0282] The display surface of the display unit 7102 is curved, and the display is performed along the curved display surface. The display portion 7102 is provided with a touch sensor, and can be touched with a finger or a stylus. For example, the icon 71 displayed on the display unit 7102 can be operated by touching it. You can launch the application by touching 07.

[0283] The operation button 7105 is used to set the time, turn the power on and off, and turn wireless communication on and off. It has various functions such as operation, silent mode activation and deactivation, power saving mode activation and deactivation, etc. For example, an operating system installed in the portable information terminal 7100 can The function of the operation button 7105 can also be freely set using the stem.

[0284] In addition, the mobile information terminal 7100 is capable of performing standardized short-range wireless communication. For example, by communicating with a wireless headset, hands-free operation is possible. You can also make calls.

[0285] The portable information terminal 7100 also has an input / output terminal 7106, and a connector for connecting to other information terminals. Data can be exchanged directly via the input / output terminal 7106. The charging operation can be performed by wireless power supply without going through the input / output terminal 7106. It is also possible.

[0286] The display portion 7102 of the portable information terminal 7100 includes a light-emitting device or an input / output device according to one embodiment of the present invention. According to one aspect of the present invention, a device having a curved display and high reliability is provided. High-quality portable information terminals can be provided with a high yield.

[0287] 10(C) to 10(E) show examples of lighting devices. 210 and the lighting device 7220 are each provided with a base 720 having an operation switch 7203. 1 and a light emitting part supported by a base part 7201.

[0288] The lighting device 7200 shown in FIG. 10(C) includes a light-emitting unit 7202 having a wavy light-emitting surface. This makes it a highly designed lighting device.

[0289] The light-emitting portion 7212 of the lighting device 7210 shown in FIG. 10(D) has two convexly curved The light emitting units are arranged symmetrically. It can illuminate the direction.

[0290] The lighting device 7220 shown in FIG. 10(E) includes a light-emitting portion 7222 that is curved in a concave shape. Therefore, in order to collect light emitted from the light emitting portion 7222 onto the front surface of the lighting device 7220, It is suitable for brightly lighting an area.

[0291] Furthermore, the light-emitting units of the lighting devices 7200, 7210, and 7220 Since it has flexibility, the light-emitting part can be attached to a plastic material or a movable frame. The light emitting surface of the light emitting portion may be freely curved depending on the application.

[0292] Here, the illumination device in which the light emitting unit is supported by the base is exemplified. The housing can be fixed to the ceiling or can be hung from the ceiling. The surface can be curved, so the light-emitting surface can be curved concavely to brighten a specific area. It can also be used to illuminate a room, or the light-emitting surface can be curved convexly to brightly illuminate an entire room.

[0293] Here, each light-emitting portion incorporates a light-emitting device or an input / output device according to one embodiment of the present invention. According to one aspect of the present invention, a lighting device having a curved light-emitting portion and high reliability can be manufactured in a yield. We can provide it more efficiently.

[0294] FIG. 10F shows an example of a portable display device. The display device 7300 has a housing 7 301, display unit 7302, operation button 7303, drawer member 7304, control unit 7305 Equipped with.

[0295] The display device 7300 is a flexible display unit rolled up in a cylindrical housing 7301. Equipped with 7302.

[0296] The display device 7300 can receive a video signal through the control unit 7305. The control unit 7305 is provided with a battery. In addition, the control unit 7305 is provided with a terminal unit for connecting a connector, and video signals and power can be transmitted via a wired connection. Alternatively, the power may be supplied directly from the outside.

[0297] In addition, the operation button 7303 can be used to turn the power on and off and to switch the displayed image. etc. can be done.

[0298] FIG. 10G shows a state in which the display unit 7302 is pulled out by the pull-out member 7304. In this state, an image can be displayed on the display unit 7302. The operation button 7303 arranged on the surface of the housing 7301 allows for easy operation with one hand. In addition, as shown in FIG. 10(F), the operation button 7303 can be positioned at the center of the housing 7301. By placing it close to one side, it can be easily operated with one hand.

[0299] When the display portion 7302 is pulled out, the display surface of the display portion 7302 is fixed to a flat surface. To secure the display portion 7302 in place, a frame for reinforcing the display portion 7302 may be provided on the side of the display portion 7302.

[0300] In addition to this configuration, a speaker is provided on the housing, and the sound is transmitted by the audio signal received together with the video signal. The audio may be output by the audio input.

[0301] The light-emitting device or the input / output device of one embodiment of the present invention is incorporated in the display portion 7302. According to one embodiment of the present invention, a lightweight and highly reliable display device can be provided with a high yield. .

[0302] 10(H) to 10(K) show a flexible portable information terminal 7230. The terminal 7230 includes a housing 7231 and a display unit 7232. 7233a, 7233b, speakers 7234a, 7234b as audio output means, vibration It may also have vibration motors 7235a, 7235b, etc. as means.

[0303] The light-emitting device or the input / output device of one embodiment of the present invention is incorporated in the display portion 7232. .

[0304] The display portion 7232 and the housing 7231 are flexible. It is easy to bend it into a desired shape or to twist the portable information terminal 7230. For example, the display portion 7232 may be recessed along a direction perpendicular to the long side of the portable information terminal 7230. The curved shape is either curved in a convex shape (Fig. 10(I)), or curved in a convex shape (Fig. 10(J)). ) can also be used. Also, as shown in FIG. 10(K), The display portion 7232 can also be curved along the direction.

[0305] 11(A) to 11(C) show a foldable mobile information terminal 310. The mobile information terminal 310 is shown in an unfolded state. 11(C) shows the mobile information terminal 310 in a state in which it is changing from one of the states to the other. 3 shows the portable information terminal 310 in a folded state. When opened, it is highly portable, and when unfolded, it has a seamless, wide display area that allows for easy viewing. can be.

[0306] The display panel 312 is supported by three housings 315 connected by hinges 313. The two housings 315 are bent via the hinge 313, so that the portable information terminal 31 The present invention can be applied to a device that is reversibly transformed from an unfolded state to a folded state. The light-emitting device or input / output device according to the embodiment can be used in the display panel 312. For example, Light-emitting devices or input / output devices that can be bent with a radius of curvature of 0.01 mm or more and 150 mm or less The device can be applied.

[0307] 11(D) and (E) show a foldable mobile information terminal 320. The mobile information terminal 320 is shown in a folded state with the display unit 322 facing outward. (E) shows the portable information terminal 320 in a folded state with the display unit 322 facing inward. When the mobile information terminal 320 is not in use, the non-display section 325 is folded outward. This can prevent the display portion 322 from being soiled or scratched. The device can be used as the display unit 322.

[0308] Fig. 11(F) is a perspective view illustrating the external shape of the portable information terminal 330. 11(H) is a top view of the portable information terminal 330. FIG. 11(H) illustrates the external shape of the portable information terminal 340. FIG.

[0309] The portable information terminals 330 and 340 are, for example, a telephone, a notebook, an information viewing device, or the like. Specifically, each device can be used as a smartphone. Cut.

[0310] The mobile information terminals 330 and 340 can display text and image information on multiple surfaces. For example, three operation buttons 339 can be displayed on one surface (FIG. 11(F), ( H)). Also, the information 337 shown in the dashed rectangle can be displayed on another surface (see FIG. 11( G), (H). Examples of information 337 include SNS (social networking sites). Notifications for the following services, notifications for incoming e-mails and phone calls, etc. The subject or sender name, date and time, time, remaining battery level, antenna reception strength, etc. In place of the information 337, an operation button 339 and an arrow are displayed. In addition, in Fig. 11(F) and (G), information 337 is displayed on the upper side. Although the illustrated example is shown, one embodiment of the present invention is not limited to this. It may be displayed on the side, as in the mobile information terminal 340 shown in FIG.

[0311] For example, the user of the mobile information terminal 330 may store the mobile information terminal 330 in a breast pocket of his / her clothes. In this state, the display (information 337 in this example) can be confirmed.

[0312] Specifically, the telephone number or name of the caller of the incoming call is displayed on the top of the mobile information terminal 330. The user takes the mobile information terminal 330 out of his pocket. You can check the display and decide whether to answer the call without having to touch the screen.

[0313] The housing 335 of the portable information terminal 330 and the housing 336 of the portable information terminal 340 each have a table. The light-emitting device or the input / output device of one embodiment of the present invention can be used for the display portion 333. According to one aspect of the present invention, a highly reliable portable information terminal having a curved display portion can be manufactured in a high yield. We can provide it more efficiently.

[0314] Also, like the portable information terminal 345 shown in FIG. 11(I), information may be displayed on three or more screens. Here, information 355, information 356, and information 357 are displayed on different sides. Here is an example:

[0315] A display portion 358 of a housing 351 of a portable information terminal 345 includes a light-emitting device according to one embodiment of the present invention. Alternatively, an input / output device can be used. Moreover, highly reliable portable information terminals can be provided with a high yield.

[0316] This embodiment mode can be combined with other embodiment modes as appropriate. [Explanation of symbols]

[0317] 101 Substrate 103 Adhesive layer 105 Insulating layer 106 Element Layer 106a Element layer 106b Functional layer 107 Adhesive layer 111 Substrate 113 Adhesive layer 115 Insulating layer 301 Display section 302 pixels 302B subpixel 302G subpixel 302R subpixel 302t transistor 303c capacity 303g(1) Scanning line driver circuit 303g(2) Imaging pixel drive circuit 303s(1) Image signal line driver circuit 303s(2) Image signal line driver circuit 303t transistor Gate 304 308 imaging pixels 308p photoelectric conversion element 308t transistor 309 FPC 310 Mobile Information Terminals 311 Wiring 312 Display Panel 313 Hinge 315 Case 319 terminal 320 Mobile Information Terminals 321 Insulating Layer 322 Display section 325 Hidden part 328 Bulkhead 329 Spacer 330 Mobile Information Terminals 333 Display section 335 Case 336 Case 337 Information 339 Operation Button 340 Mobile Information Terminals 345 Mobile Information Terminals 350R light emitting element 351 Case 351R lower electrode 352 Upper electrode 353 EL layer 353a EL layer 353b EL layer 354 Middle Class 355 Information 356 Information 357 Information 358 Display section 360 adhesive layer 367B Colored layer 367BM light shielding layer 367G colored layer 367p anti-reflection layer 367R colored layer 380B Light Emitting Module 380G light emitting module 380R Light Emitting Module 390 I / O devices 500 Display 500TP I / O device 501 Display section 503g drive circuit 503s drive circuit 505 Input / Output Device 505B I / O device 509 FPC 590 PCB 591 Electrode 592 Electrode 593 Insulating Layer 594 Wiring 595 Touch Sensor 597 Adhesive layer 598 Wiring 599 Connection Layer 600 Input section 602 Detection Unit 603d drive circuit 603g drive circuit 650 Capacitor 651 Electrode 652 Electrode 653 Insulation Layer 667 Window 670 protective layer 804 Light-emitting part 806 Drive circuit section 808 FPC 814 Conductive layer 815 Insulation layer 817 Insulation layer 817a Insulating layer 817b Insulating layer 820 transistors 821 Insulation layer 822 Adhesive layer 823 Spacer 824 transistors 825 Connector 830 Light-emitting element 831 Lower electrode 832 Optical adjustment layer 833 EL layer 835 Upper electrode 845 Colored layer 847 Light blocking layer 849 Overcoat 856 Conductive layer 857 Conductive layer 857a Conductive layer 857b Conductive layer 7100 Mobile Information Terminal 7101 Housing 7102 Display section 7103 Band 7104 Buckle 7105 Operation button 7106 Input / output terminal 7107 Icon 7200 Lighting Equipment 7201 Daibu 7202 Light-emitting part 7203 Operation switch 7210 Lighting equipment 7212 Light-emitting part 7220 Lighting equipment 7222 Light-emitting part 7230 Mobile Information Terminal 7231 Case 7232 Display section 7233a Button 7233b button 7234a Speaker 7234b Speaker 7235a Vibration Motor 7235b Vibration Motor 7300 display device 7301 Housing 7302 Display section 7303 Operation button 7304 Materials 7305 Control Unit 7400 mobile phone 7401 Housing 7402 Display section 7403 Operation button 7404 External connection port 7405 Speaker 7406 Microphone

Claims

1. A module comprising a light emitting device having a first flexible substrate, a second flexible substrate, a first adhesive layer, a second adhesive layer, and an element layer, and an FPC, the first flexible substrate comprises an organic resin; the second flexible substrate comprises an organic resin; the device layer is located between the first flexible substrate and the second flexible substrate; the first adhesive layer is located between the first flexible substrate and the device layer; the second adhesive layer is located between the second flexible substrate and the device layer; The device layer comprises: a transistor on the second flexible substrate; and a first insulating layer having a region disposed over the transistor; a lower electrode of a light-emitting element having a region provided on the first insulating layer; a second insulating layer having an area overlapping an end portion of the lower electrode and functioning as a partition wall; a layer including a light-emitting organic compound and having a region provided on the lower electrode; an upper electrode of the light-emitting element having a region provided on the layer containing the light-emitting organic compound; a photodiode disposed below the light-emitting element so as not to overlap the light-emitting element; light incident from the first flexible substrate side is incident on the photodiode without passing through the second insulating layer, the light-emitting element has a function of emitting light toward the first flexible substrate, a difference between the sum of the thicknesses of the first flexible substrate and the first adhesive layer and the sum of the thicknesses of the second flexible substrate and the second adhesive layer is within 10 μm; the first flexible substrate has a first portion; the second flexible substrate has a second portion; the first portion has a higher average transmittance in a wavelength range of 400 nm or more and 800 nm or less than that of the second portion; the second flexible substrate has a higher glass transition temperature than the first flexible substrate; A module in which the FPC is electrically connected to a conductive layer provided on the second flexible substrate through an opening provided in the first flexible substrate, the first adhesive layer, and the element layer.

2. A module comprising a light-emitting device having a first flexible substrate, a second flexible substrate, a first adhesive layer, a second adhesive layer, and an element layer, and an FPC, the first flexible substrate comprises an organic resin; the second flexible substrate comprises an organic resin; the device layer is located between the first flexible substrate and the second flexible substrate; the first adhesive layer is located between the first flexible substrate and the device layer; the second adhesive layer is located between the second flexible substrate and the device layer; The device layer comprises: a transistor on the second flexible substrate; and a first insulating layer having a region disposed over the transistor; a lower electrode of a light-emitting element having a region provided on the first insulating layer; a second insulating layer having an area overlapping an end portion of the lower electrode and functioning as a partition wall; a layer including a light-emitting organic compound and having a region provided on the lower electrode; an upper electrode of the light-emitting element having a region provided on the layer containing the light-emitting organic compound; a photodiode disposed below the light-emitting element so as not to overlap the light-emitting element; light incident from the first flexible substrate side is incident on the photodiode without passing through the second insulating layer, the light-emitting element has a function of emitting light toward the first flexible substrate, the first flexible substrate has a first portion; the second flexible substrate has a second portion; The first portion has a higher transmittance than the second portion, the second flexible substrate has a higher glass transition temperature than the first flexible substrate; A module in which the FPC is electrically connected to a conductive layer provided on the second flexible substrate through an opening provided in the first flexible substrate, the first adhesive layer, and the element layer.