Information processing device

Abstract

To provide a new imaging panel of a transmission type, a new imaging panel including a display function, and a new imaging device.SOLUTION: A configuration of an imaging panel is conceived that includes: a plurality of windows or pixels arranged in a matrix shape; a photoelectric conversion element extending between them; and a detection circuit to which a signal is supplied from the photoelectric conversion element.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to an article, a method, or a manufacturing method. Alternatively, the present invention relates to a process, a machine, relating to the manufacture or composition of matter, especially The present invention relates to, for example, a semiconductor device, a display device, a light-emitting device, a power storage device, and a driving method thereof. In particular, the present invention relates to an imaging panel or an imaging device. do. [Background technology]

[0002] The social infrastructure related to information transmission methods has been improved. This allows diverse and abundant information to be shared at work and in the workplace. It is now possible to obtain or send information not only at home but also on the go using information terminals. .

[0003] Portable information terminal devices have also been developed. Portable information terminal devices are used outdoors. Therefore, it is easy to input information without using a keyboard, etc. A configuration that can do this is desirable.

[0004] A device that has the function of outputting information and the function of inputting information by the incidence of light (called an input / output device) (also referred to as "semiconductor device") is known (Patent Document 1). [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-33154 Summary of the Invention [Problem to be solved by the invention]

[0006] An object of one embodiment of the present invention is to provide a novel transmissive imaging panel. It is an object of the present invention to provide a novel imaging panel having a display function. An object of the present invention is to provide an imaging device.

[0007] The description of these problems does not preclude the existence of other problems. It is not necessary for the present invention to solve all of these problems. The above will be made clear from the description, drawings, claims, etc. It is possible to extract other issues from the descriptions in the patent, claims, etc. [Means for solving the problem]

[0008] One embodiment of the present invention includes an insulating surface and a plurality of imaging pixels on the insulating surface, A plurality of windows that transmit visible light arranged in a trix shape, a signal supplying element extending between the plurality of windows, The imaging panel includes a photoelectric conversion element and a detection circuit to which a signal is supplied.

[0009] Another embodiment of the present invention is a semiconductor device including an insulating surface and a plurality of imaging pixels on the insulating surface, The optical fiber includes a plurality of windows that transmit visible light arranged in a matrix, a signal path extending between the windows, and a signal path. an imaging panel including a plurality of photoelectric conversion elements that supply signals and a detection circuit to which a plurality of signals are supplied; It's Nell.

[0010] Another embodiment of the present invention is a semiconductor device including an insulating surface and a plurality of imaging pixels on the insulating surface, The optical fiber includes a plurality of windows that transmit visible light arranged in a matrix, a signal path extending between the windows, and a signal path. a plurality of photoelectric conversion elements for supplying signals and a plurality of detection circuits to which signals are supplied and which are connected in parallel; The imaging panel is provided with:

[0011] The imaging panel according to one aspect of the present invention includes a plurality of windows that transmit visible light, and a light guide extending between the windows. The size or arrangement of the windows of the imaging pixels is determined by the optical The influence on the light receiving area of ​​the electric conversion element can be reduced. Not only can it detect the distribution of light intensity for each of the multiple imaging pixels, but it can also The image sensor is placed on one side of the camera and a high-definition window is placed on the other side of the camera panel. As a result, it is possible to observe through the transmission type, which is resistant to noise and is less likely to malfunction. It is possible to provide a novel imaging panel.

[0012] In addition, one embodiment of the present invention provides a display device including a plurality of display pixels instead of a plurality of windows. the imaging panel as described above, comprising a display pixel circuit capable of supplying a signal to the display element and the It is.

[0013] The imaging panel according to one aspect of the present invention includes a plurality of display pixels capable of displaying information; and a photoelectric conversion element extending between the image pickup pixel and the display pixel. This reduces the influence that the size or arrangement of the photoelectric conversion element has on the light receiving area of ​​the photoelectric conversion element. This allows the intensity distribution of light incident on the imaging panel to be detected for each of the multiple imaging pixels. Not only that, but the imaging pixels also allow for high-definition images to be displayed. Provides a new imaging panel with high-definition display functionality that is resistant to noise and malfunctions It is possible.

[0014] Another aspect of the present invention is a first imaging device including a detection circuit capable of supplying a first imaging signal. a second imaging element having a first imaging pixel and a detection circuit capable of providing a second imaging signal; the imaging panel including the image pixels, and a readout device to which the first imaging signal and the second imaging signal are supplied. and a readout circuit for reading the first imaging signal from the first imaging signal. a first amplifier for amplifying a first imaging signal and supplying the amplified signal; a second amplifier for amplifying the first amplified signal or a second amplified signal and supplying the amplified signal to a second amplifier; A selection circuit is provided that can select and supply one of the amplified signals.

[0015] The imaging device according to one aspect of the present invention amplifies an imaging signal supplied from an imaging pixel of an imaging panel. and a selection circuit that can select and supply one of a plurality of amplified signals. This allows the imaging pixels that read signals to be read over a wide range of the imaging panel. A selection circuit can be used to select from a large number of imaging pixels arranged in a wide area. Half of the image signals supplied by the image pixels arranged in a small range are thinned out. The signal can be amplified using an amplifier and then supplied to the selection circuit. As a result, the signal processing speed can be increased, or the signal is more resistant to noise or malfunction. It is possible to provide a novel imaging device that is difficult to manufacture.

[0016] In this specification, the term "light emitting device" refers to an image display device or a light source (including a lighting device). Also, when a connector is attached to a light emitting device, such as an FPC (Flexible Printed Circuit) ted circuit) or TCP (Tape Carrier Package) ) attached to the module, a module with a printed wiring board attached to the TCP, Alternatively, the light emitting element is mounted on a substrate by COG (Chip On Glass) method. All modules in which C (integrated circuit) is directly mounted are also included in the light-emitting device.

[0017] In the drawings accompanying this specification, components are classified by function and are shown as independent blocks. However, it is difficult to completely separate the components by function in reality. It is possible that one component may be involved in multiple functions.

[0018] In this specification, the source and drain of a transistor are used to indicate the polarity and The name changes depending on the level of the potential applied to the terminal. Generally, n-channel In a transistor with a low potential, the terminal to which a low potential is applied is called the source, and the terminal to which a high potential is applied is called the The terminal to which the transistor is connected is called the drain. The terminal to which a high potential is applied is called the drain, and the terminal to which a high potential is applied is called the source. For convenience, let us assume that the source and drain are fixed. However, in reality, the source and drain are connected according to the above potential relationship. The way they are handled changes.

[0019] In this specification, the source of a transistor is a part of a semiconductor film that functions as an active layer. The source region connected to the semiconductor film or the source electrode connected to the semiconductor film. The drain of the transistor is a drain region that is a part of the semiconductor film, or a region that is part of the semiconductor film. "Gate" means the gate electrode.

[0020] In this specification, the state in which transistors are connected in series means, for example, Only one of the source or drain of one transistor is connected to the source or drain of the second transistor. It also means that the transistors are connected in parallel. The state where either the source or drain of the first transistor is connected to the second transistor and the source or drain of the first transistor is connected to one of the source and drain of the second transistor. The other of the two transistors is connected to the other of the source or drain of the second transistor. do.

[0021] In this specification, connection means an electrical connection, and a current, voltage, or potential is supplied. Therefore, the connected state corresponds to the state where the signal can be supplied or transmitted. does not necessarily refer to the state in which a current, voltage, or potential is available or transferable. The signals are transmitted through circuit elements such as wires, resistors, diodes, and transistors. This also includes the state of being directly connected.

[0022] In this specification, when components that are independent on the circuit diagram are connected to each other, However, in reality, for example, when a part of the wiring functions as an electrode, one conductive film may be connected to multiple In this specification, the term "connection" refers to such a Cases in which one conductive film has the functions of multiple components are also included in this category.

[0023] In this specification, either the first electrode or the second electrode of a transistor is a source the other refers to the drain electrode. [Effects of the Invention]

[0024] According to one aspect of the present invention, a novel transmissive imaging panel can be provided. It is possible to provide a novel imaging panel equipped with the above-mentioned components, or a novel imaging device. [Brief explanation of the drawings]

[0025] [Figure 1] 1A and 1B are schematic diagrams illustrating a configuration of an imaging panel according to an embodiment. [Figure 2] 1A and 1B are diagrams illustrating a configuration of an imaging panel having a display function according to an embodiment. [Figure 3] 2A to 2C are diagrams illustrating a configuration of an imaging pixel according to an embodiment. [Figure 4] 2A to 2C are diagrams illustrating a configuration of an imaging pixel according to an embodiment. [Figure 5] 1A to 1C are diagrams illustrating the structure of a photoelectric conversion element that can be used for an imaging pixel according to an embodiment. [Figure 6] 1A and 1B are diagrams illustrating a configuration of a detection circuit that can be used in an imaging pixel according to an embodiment. [Figure 7] 1 is a cross-sectional view illustrating an imaging device according to an embodiment. [Figure 8] FIG. 1 is a block diagram illustrating a configuration of an imaging apparatus according to an embodiment. [Figure 9] FIG. 2 is a circuit diagram illustrating a readout circuit that can be used in the imaging device according to the embodiment. [Figure 10] 1A to 1C illustrate electronic devices according to an embodiment. [Figure 11] 1A and 1B are a circuit diagram of a display pixel circuit according to an embodiment and a timing chart of a method for driving the display pixel circuit; [Figure 12] 1A and 1B are a circuit diagram of a display pixel circuit according to an embodiment and a timing chart of a method for driving the display pixel circuit; [Figure 13] 1A and 1B are diagrams illustrating a configuration of an imaging panel having flexibility and a display function according to an embodiment. [Figure 14] 1A and 1B are diagrams illustrating a configuration of an imaging panel having a display function according to an embodiment. [Figure 15]1A to 1C are diagrams illustrating display quality of an imaging panel having a display function according to an embodiment. [Figure 16] 1A to 1C are diagrams illustrating flexibility of an imaging panel having a display function according to an embodiment. [Figure 17] 1A to 1C are diagrams illustrating display quality of an imaging panel having a display function according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0026] <Examples of problems that can be solved by one embodiment of the present invention> The social infrastructure related to information transmission methods has been improved, and there is a wide variety of portable information terminal devices. It is now possible to obtain or send information while on the go.

[0027] This requires high functionality in portable information terminal devices. There is a demand for higher resolution.

[0028] In addition, portable information terminals are often used outdoors. There is a need for an input method that allows easy input of information even when the number of fingers that can be used is limited. For example, a touch panel is preferable.

[0029] As the resolution of display devices increases, the distance between pixels becomes narrower, and the touch panel touch panel In addition, it is difficult to arrange the sensors between the narrow pixels. If the voltage is too low, the output of the detection element will be weak, making the touch panel more susceptible to malfunctions and failures. become.

[0030] <One aspect of the present invention> The embodiments described below include detection elements that are limited to regularly spaced windows, display elements, etc. This includes an aspect of the present invention that was created with a focus on the placement of the children.

[0031] The imaging panel according to one aspect of the present invention includes a plurality of windows, pixels, etc., arranged in a matrix, and the spaces between them. and a detection circuit to which a signal is supplied from the photoelectric conversion element. It consists of:

[0032] According to the imaging panel of the above aspect of the present invention, a novel transmission type imaging panel can be provided. Alternatively, a novel imaging panel having a display function can be provided. Alternatively, a novel imaging device can be provided. can.

[0033] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiments, and various changes and modifications may be made in the form and details thereof without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be achieved by the following embodiments. It should not be construed as being limited to the contents of the description. The same reference numerals are used in different drawings to denote the same parts or parts having similar functions. A repeated explanation will be omitted.

[0034] (Embodiment 1) In this embodiment, a structure of an imaging panel according to one embodiment of the present invention will be described with reference to FIGS. While explaining.

[0035] 1A-1 to 1C-1 are schematic diagrams of an imaging panel according to one embodiment of the present invention. (A-2) to (C-2) of FIG. 1 explain the configuration of the imaging pixels included in the corresponding imaging panel. FIG.

[0036] The imaging panel 100A described in this embodiment (see FIGS. 1(A-1) and 1(A-2)) (Reference) has an insulating surface of a substrate 101 and a plurality of imaging pixels 110A on the insulating surface. The imaging pixel 110A has a plurality of windows 150A arranged in a matrix and transmitting visible light. , a grid-like photoelectric conversion element 120 extending between the plurality of windows 150A and supplying a signal; The detector circuit 130 is supplied with

[0037] The imaging panel 100B described in this embodiment is shown in FIG. 1(B-1) and FIG. 1(B- 2)), and has an insulating surface of a substrate 101 and a plurality of imaging pixels 110B on the insulating surface. The imaging pixel 110B has a plurality of windows 110B that are arranged in a matrix and transmit visible light. 50B, and a photoelectric conversion element 120 extending between the plurality of windows 150B and supplying a signal. B(1) and photoelectric conversion element 120B(2) and detection circuit 13 to which a plurality of signals are supplied. It has 0.

[0038] The imaging panel 100C described in this embodiment is shown in FIG. 1(C-1) and FIG. 1(C- 2)), and has an insulating surface of a substrate 101 and a plurality of imaging pixels 110C on the insulating surface. The imaging pixel 110C has a plurality of windows 110C arranged in a matrix and transmitting visible light. 50C, and photoelectric conversion elements 120C ( 1) and the photoelectric conversion element 120C(2), and the signal is supplied and connected in parallel. It includes a detection circuit 130(1) and a detection circuit 130(2).

[0039] The imaging panel 100A, the imaging panel 100B, and the imaging panel 10 The optical fiber includes a plurality of windows that transmit visible light and a photoelectric conversion element extending between the windows. This allows the size and arrangement of the image pixel windows to be adjusted to the light receiving surface of the photoelectric conversion element. The effect on the product can be reduced. can be detected for each of a plurality of imaging pixels.

[0040] For example, if windows are arranged precisely on an insulating surface, the intervals between the windows become narrow. If you try to place it in the same position, the light receiving area will be small, or the window opening area will be small. By arranging the photoelectric conversion element so that it extends between the plurality of windows, the opening area of ​​the windows can be reduced. The light receiving area can be increased without reducing the size.

[0041] Also, an object placed on one side of the imaging panel can be projected from the other side of the imaging panel with high definition. It can be observed through the windows placed

[0042] For example, when the imaging panel 100A is used by overlapping it with the display panel 1100, as shown in FIG. The following description will be made with reference to Fig. 2(B-1) and Fig. 2(B-2). 2(B-1) is a schematic diagram of the state in which the panel 100A is superimposed on the display panel 1100, and FIG. 2(B-2) is a corresponding The imaging pixel 110A included in the imaging panel 100A and the complex pixel overlapping with the imaging pixel 110A. 11 is a schematic diagram illustrating a number display pixel 1150. FIG.

[0043] The imaging panel 100A includes a substrate 101 and a plurality of imaging elements provided on the insulating surface of the substrate 101. The imaging panel 100A includes a pixel 110A (see FIG. 2(B-1)). The imaging pixel 110A is provided so as to be able to detect light transmitted through the substrate 101. It is being done.

[0044] The display panel 1100 includes a plurality of display pixels 1150. The display element includes a display pixel circuit for supplying signals to the display element.

[0045] A plurality of windows 150A that transmit visible light are arranged to overlap the display pixels 1150 of the display panel 1100. By arranging the imaging panel 100A in this way, the imaging panel 100A can be used as a touch panel. The resolution of the image capture pixels does not need to be the same as the resolution of the display panel, and can be coarser than the display pixels. Specifically, when detecting a finger or the like, the imaging pixels can be arranged It can be lower than the resolution of the display pixels.

[0046] As a result, a novel transmission type imaging panel that is resistant to noise and is less prone to malfunction can be provided. Alternatively, in-cell or on-cell types that are resistant to noise or malfunction are also available. Thus, a novel touch panel can be provided.

[0047] The individual elements constituting the imaging panel 100A according to one embodiment of the present invention will be described below. See Figure 1(A-1) and Figure 1(A-2)).

[0048] "substrate" The substrate that can be used for the substrate 101 must be heat-resistant enough to withstand the temperatures that are applied during the manufacturing process. The thickness and size of the material are suitable for the manufacturing equipment and the functional elements of the material are There are no particular limitations as long as it prevents the diffusion of

[0049] The structures that can be used for the substrate include a single layer structure, a laminated structure, or a fibrous or particulate material. For example, a film having a thickness of 1 μm or more and less than 200 μm may have a composite structure containing the film. Examples include a film-like structure and a plate-like structure with a thickness of 0.1 mm or more.

[0050] The substrate must be made of a material that is suitable for the application of heat and temperature during the manufacturing process, and is also suitable for the application of heat and temperature during the manufacturing process. The range of linear expansion coefficient is 1×10 -3 / K or less, preferably 5×10 -5 / K or less, more preferably 1×10 -5 / K or less A substrate in which

[0051] Materials that can be used for the substrate include, for example, glass, ceramics, metals, inorganic materials, and or resin, etc.

[0052] Specifically, the glass may be alkali-free glass, soda-lime glass, potash glass, or Crystal glass or the like can be used.

[0053] As the metal, SUS, aluminum, etc. can be used. By forming it on the surface of a metal, the metal surface can be made insulating.

[0054] As the inorganic film, for example, a metal oxide film, a metal nitride film, a metal oxynitride film, or the like can be used. Specifically, silicon oxide, silicon nitride, silicon oxynitride, alumina film, etc. can be used.

[0055] Resins include polyester, polyolefin, polyamide, polyimide, and polycarbonate. For example, a resin such as cellulose or acrylic resin can be used.

[0056] <Imaging pixels> The imaging pixel 110A receives a signal from the photoelectric conversion element 120. The detector circuit 130 includes:

[0057] The photoelectric conversion element 120 may be, for example, a photodiode.

[0058] The detection circuit 130 uses an amplifier that amplifies the signal supplied from the photoelectric conversion element 120. The selection circuit can be provided in the detection circuit 130. , one imaging pixel 110A is selected from the plurality of imaging pixels 110A provided on the imaging panel 100A. You can choose from:

[0059] An example of the configuration of the imaging pixel 110A that can be applied to the imaging panel 100A is shown in FIG. This will be explained in detail in the second embodiment.

[0060] <Variation 1.> A modified example of the imaging panel exemplified in this embodiment will be described with reference to FIG.

[0061] FIG. 2(A-1) is a schematic diagram of an imaging panel having a display function according to one embodiment of the present invention. A-2) is a schematic diagram illustrating the configuration of an imaging pixel included in the imaging panel.

[0062] The imaging panel 100D with a display function exemplified as a modification of this embodiment has a plurality of windows 15 1(A-1) and 1(A-2) in that a plurality of display pixels 150D are provided instead of the display pixels 150A. This differs from the imaging panel 100A which will be described with reference to FIG.

[0063] The imaging panel 100D, which will be described as an example of a modification of this embodiment, has a plurality of windows 150A. In addition, the display pixel 150D includes a plurality of display pixels 150D. A display pixel circuit is provided that can provide a signal to the element.

[0064] As a result, the size or arrangement of the display pixels 150D affects the light receiving area of ​​the photoelectric conversion element 120. For example, when the display pixel 150D is located on the insulating surface of the substrate 101, the influence of the By arranging the display pixels 150D at high resolution, even if the intervals between the display pixels 150D become narrow, the photoelectric conversion element 120 is arranged to extend between a plurality of display pixels 150D, and its length is increased. This allows the light receiving area of ​​the photoelectric conversion element 120 to be increased.

[0065] Then, a large photoelectric conversion element 120 is used to input the light to an imaging panel 100D having a display function. The intensity distribution of the incident light is measured for each of the plurality of imaging pixels 110D provided on the insulating surface of the substrate 101. For example, the resolution of the imaging pixel 110D can be detected as the resolution of the display pixel 150D. The image pickup pixels 110D do not need to be the same resolution as the display pixels 150D, and the image pickup pixels 110D are arranged with a coarser resolution than the display pixels 150D. Specifically, when detecting a finger or the like, the imaging pixel 110D can be used as the display pixel 110B. It is possible to obtain a resolution lower than that of the 50D. The image can be displayed.

[0066] As a result, a new imaging panel with high-definition display function that is resistant to noise and malfunctions is developed. A panel can be provided.

[0067] The individual elements constituting the imaging panel 100D having a display function according to one embodiment of the present invention will be described below. We will explain about this.

[0068] Display pixels Display pixel 150D includes a display element and a pixel circuit that drives the display element.

[0069] Examples of display elements that can be used for the display pixel 150D include liquid crystal elements, organic electroluminescent elements, and the like. electroluminescence element, electronic ink, shutter-type MEMS display element, optical interference method Examples of such display elements include known display elements such as the MEMS display element described above.

[0070] The pixel circuit can be selected from known pixel circuits and used with a configuration suitable for the display element to be applied. can.

[0071] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0072] (Embodiment 2) In this embodiment, a structure of an imaging pixel that can be applied to an imaging panel of one embodiment of the present invention will be described. The following description will be given with reference to FIGS.

[0073] FIG. 3A is a top view with a circuit diagram of the imaging pixel 110B superimposed thereon. A display screen that can be provided in place of the window 150B that can transmit visible light in 3(A). 1 is a schematic diagram illustrating a configuration of a display pixel 150D. The display pixel 150D illustrated includes three sub-pixels. can.

[0074] The imaging pixel 110B described in this embodiment is a plurality of pixels arranged in a matrix of 4 rows and 4 columns. The windows 150B extend along the rows of the windows 150B and are arranged in the columns of the windows 150B. The conversion elements 121(1) to 121(4) receive signals from the photoelectric conversion elements. The sensor has a detection circuit (see FIG. 3(A)).

[0075] The photoelectric conversion elements 121(1) to 121(4) are connected in parallel, while All of these electrodes are electrically connected to a wiring VPO that can supply current. The other electrode is electrically connected to the second electrode of the transistor 122(2) of the detection circuit. will be done.

[0076] The detection circuit has a gate electrically connected to the wiring PR and a first electrode electrically connected to the wiring VPR. The transistor 122(1) whose gate is electrically connected to the wiring TX and whose first The electrode is electrically connected to the second electrode of the transistor 122(1), and the second electrode is a photoelectric conversion The other electrodes of the photoelectric conversion elements 121(1) to 121(4) are electrically connected to the other electrodes. The transistor 122(2) has a gate electrically connected to the wiring SE and a first electrode electrically connected to the wiring P The transistor 122(3) is connected to the first gate of the transistor 122(2). and the first electrode is electrically connected to the second electrode of transistor 122(3). a transistor 122(4) whose first electrode is electrically connected to the wiring VPI; and,

[0077] The individual elements constituting an imaging pixel applicable to an imaging panel according to one aspect of the present invention will be described below. I will explain.

[0078] "region" When an imaging panel including the imaging pixels 110B is used by overlapping with a display panel, the window 150B is The windows 150B are arranged at approximately equal intervals. If the windows 150B are arranged at uneven intervals, the windows 150B may overlap. As a result, the display pixels are arranged at uneven intervals, resulting in a decrease in display quality.

[0079] The window 150B is set to 200 ppi or more, preferably 350 ppi or more, more preferably 600 ppi or more. If you set it at a resolution of 100 ppi or more, you can display high-quality images. per inch) is a unit that represents the number of pixels per inch. When these sub-pixels make up one pixel, three sub-pixels are counted as one repeating unit.

[0080] In addition, the imaging pixels should be 5 ppi or more, preferably 10 ppi or more, and more preferably 100 ppi or more. If provided with the above resolution, it is suitable for a touch panel.

[0081] <Photoelectric conversion element> The photoelectric conversion elements 121(1) to 121(4) are, for example, photodiodes. Specifically, a semiconductor layer using silicon can be used. In particular, photodiodes with p-type, i-type, and n-type amorphous silicon stacked on top of each other are preferred. It can be used appropriately.

[0082] <Detection circuit> The detection circuit can be configured using a transistor or the like.

[0083] The transistors that can be used in the detection circuit include, for example, transistors with single crystal or polycrystalline channels. Examples of such a transistor include a transistor formed in a semiconductor layer containing a crystalline or amorphous material. The channel is made of elements from group 14 of the periodic table (e.g., Si, Ge, SiC, etc.), Compounds (e.g., GaAs, GaP, etc.), oxides (e.g., oxides containing In, Ga, Zn, etc.) Alternatively, a transistor having a channel formed in a semiconductor layer containing It is formed in a semiconductor layer (such as an oxide semiconductor) that has a wider bandgap than silicon. A transistor can be used.

[0084] In particular, transistors with low off-state current are designated as transistor 122(1) and transistor 12 The detection circuit used in 2(2) does not damage the charge stored in the storage node FD according to the amount of exposure. This makes it possible to drive the imaging panel using the global shutter method. can.

[0085] The global shutter method uses multiple imaging pixels (up to all pixels) on the imaging panel. This allows all the pixels in the image to be exposed simultaneously, resulting in a distortion-free image. can be done.

[0086] <<Method for driving the detection circuit>> The detection circuit shown in FIG. 3 can be driven by the following steps.

[0087] Here, an example of a method for operating a detection circuit configured using n-type transistors is shown. Illustrative, but not limited to,

[0088] Furthermore, a sufficiently high potential is supplied to the wiring VPO, and a sufficiently low potential is supplied to the wiring VPR and wiring VPI. Positions are provided.

[0089] In the first step, a high signal is supplied to the wiring TX and the wiring PR. Transistor 122(1) and transistor 122(2) are turned on. The potential of the node FD is set to a value according to the potential of the wiring VPR.

[0090] In the second step, a low signal is supplied to the wirings SE and PR, and a high signal is supplied to the wiring TX. This causes the transistor 122(3) and the transistor 122(4) to (1) is turned off and transistor 122(2) is turned on. The electric conversion elements 121(1) to the photoelectric conversion elements 121(4) generate a current according to the intensity of the light. It is supplied to node FD.

[0091] In the third step, a low signal is supplied to the wirings SE, PR and TX. This causes the transistor 122(3), the transistor 122(2), and the transistor 122(1) is turned off, so that node FD turns off the imaging pixel 110B has a potential that corresponds to the amount of light irradiated.

[0092] In the fourth step, a high signal is applied to the wire SE, and a low signal is applied to the wires PR and TX. This turns on the transistor 122(3) and the transistor 122( 1) and transistor 122(2). As a result, transistor 122(4) The current flowing between the first and second electrodes of the transistor FD depends on the potential of the node FD. .

[0093] In a fifth step, the readout circuitry (not shown) detects the voltage across transistor 122(4). This allows the imaging pixel 110B to read the current that is irradiated in the second step. The emitted light can be detected.

[0094] In the sixth step, the driving of the detection circuit is terminated. Returning to the first step, The sensing circuit can also be driven repeatedly.

[0095] <Variation 1.> A modified example of the imaging pixel exemplified in this embodiment will be described with reference to FIG.

[0096] FIG. 4 is a top view on which a circuit diagram illustrating a modified example of the imaging pixel is superimposed.

[0097] The imaging pixel 110C exemplified in the modification of this embodiment is the same as the imaging pixel 110A described with reference to FIG. The feature is that the pixel has two components and the two components are connected in parallel. 3. Therefore, the different parts will be explained here. 3 will be used in the description of the same configuration. do.

[0098] The imaging pixel 110C described in the modified example of this embodiment includes an imaging section 110C(1) and an imaging section 110C(2). The imaging unit 110C(1) and the imaging unit 110C(2) each have four rows. It has a plurality of windows 150B arranged in a matrix of four rows.

[0099] The imaging unit 110C(1) and the imaging unit 110C(2) each have four photoelectric conversion elements. A total of eight photoelectric conversion elements are connected in parallel. Note that one terminal of each of the eight photoelectric conversion elements is are all electrically connected to the wiring VPO.

[0100] The imaging unit 110C(1) and the imaging unit 110C(2) each have a detection circuit and are connected in parallel. The other terminal of the photoelectric conversion element is connected to the second electrode of the transistor 122(2) of the detection circuit. are electrically connected.

[0101] The imaging unit 110C(1) and the imaging unit 110C(2) are connected to the wiring PR and the wiring VPR, respectively. , the wiring TX, the wiring SE, the wiring PO, and the wiring VPI.

[0102] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0103] (Embodiment 3) In this embodiment, a display device that can be applied to an imaging panel 100D having a display function according to one embodiment of the present invention will be described. The configuration of the imaging pixel 110D will be described with reference to FIGS. 5 to 7. Specifically, It can be used in an imaging panel having a display function as described in the first embodiment with reference to FIG. 2(A-1). An example of the configuration of the imaging pixel 110D that can achieve this will be described below.

[0104] 5 and 6 are top views of the imaging pixel 110D. Specifically, FIG. The above is for explaining the arrangement of the photoelectric conversion elements 121B(1) to 121B(4). FIG. 6 is a side view of the detection circuit for detecting a signal supplied by the photoelectric conversion element described with reference to FIG. 5 is a top view for explaining the arrangement of the paths. It is placed over the detection circuit, which will be described with reference to FIG.

[0105] For simplicity and clarity of the drawing, the display pixel 150D is shown as a rectangle using dashed lines in FIG. However, one display pixel 150D is composed of three sub-pixels including the sub-pixel 150D(R). This is also illustrated in Figure 6.

[0106] 7 is a cross-sectional view taken along the line X1-X2-X3-X4 shown in FIG.

[0107] <Photoelectric conversion element arrangement> The imaging pixel 110D includes a plurality of display pixels 150D arranged in a matrix of 4 rows and 4 columns, The photoelectric conversion elements 121B(1) to 121B(4) are connected in parallel. (See FIG. 5.) The photoelectric conversion elements 121B(1) to 121B(4) are arranged in the row direction. The display electrodes 150D extend along the display pixels 150D arranged in the column direction of the display pixels 150D.

[0108] One electrode of the photoelectric conversion element 121B(3) is electrically connected to the wiring VPO through the opening 425. The other electrode of the photoelectric conversion element 121B(3) is connected to the transistor through an opening 178. The second electrode of the transistor 122(2) is electrically connected to the second electrode of the transistor 122(3). The transistor 122(2) is the same transistor as the transistor 122(2) shown in FIG.

[0109] <Detection circuit layout> The imaging pixel 110D includes a wiring SE, a wiring PR, a wiring TX, a wiring VPR, a wiring VPI, and a wiring It is electrically connected to the line PO (see FIG. 6).

[0110] The imaging pixel 110D includes a transistor 122(1), a transistor 122(2), and a transistor It comprises a resistor 122(3) and a transistor 122(4).

[0111] The opening 178 shown in FIG. 6 is the same opening as the opening 178 shown in FIG.

[0112] <Cross-sectional structure of imaging pixels> The cross-sectional configuration of the imaging pixel 110D will be described with reference to FIG.

[0113] The imaging pixel 110D includes a photoelectric conversion element 121B(3) and a detection element including a transistor 122(2). a display pixel circuit including a sensing circuit, a transistor 125, and a display pixel including a sub-pixel 150D(R) between the substrate 410 and the opposing substrate 470.

[0114] "substrate" The substrate that can be used for the substrate 410 must be heat-resistant enough to withstand the temperatures that will be applied during the manufacturing process. The thickness and size of the light-emitting element are suitable for the manufacturing equipment and the light-emitting element is free from unintentional impurities. There are no particular limitations as long as it prevents the diffusion of

[0115] The substrate, in which the diffusion of unintended impurities is suppressed to such an extent that it can be used as a substrate, is The gas barrier properties determined according to the light emitting device to be used can be used as an index for selection. Specifically, when an organic EL element is used as a light emitting element, the water vapor permeability must be 10-5 g / m 2 ·day or less, preferably 10 -6 g / m 2 Use a substrate that is less than 1000mV. This can be done.

[0116] The structures that can be used for the substrate include a single layer structure, a laminated structure, or a fibrous or particulate material. For example, a film having a thickness of 1 μm or more and less than 200 μm may have a composite structure containing the film. Examples include a film-like structure and a plate-like structure with a thickness of 0.1 mm or more.

[0117] A substrate with a suppressed linear expansion coefficient to the extent that it can be used as a substrate has a linear expansion coefficient that is suppressed to the extent that it can be used as a substrate. The difference in elongation, heat applied during the manufacturing process, and allowable curl can be selected. Specifically, the range of linear expansion coefficient is 1×10 -3 / K or less, preferably 5×10 -5 / K Less than or equal to 1×10 -5 A substrate having a SiO2 content of 0.1 kJ / K or less can be used.

[0118] Materials that can be used for the substrate include, for example, glass, ceramics, metals, inorganic materials, and or resin, etc.

[0119] Specifically, the glass may be alkali-free glass, soda-lime glass, potash glass, or Crystal glass or the like can be used.

[0120] As the metal, SUS, aluminum, etc. can be used. By forming it on the surface of a metal, the metal surface can be made insulating.

[0121] As the inorganic film, for example, a metal oxide film, a metal nitride film, a metal oxynitride film, or the like can be used. Specifically, silicon oxide, silicon nitride, silicon oxynitride, alumina film, etc. can be used.

[0122] Resins include polyester, polyolefin, polyamide, polyimide, and polycarbonate. For example, a resin such as cellulose or acrylic resin can be used.

[0123] The substrate 410 exemplified in this embodiment has a base material 410b and a layer 410c for preventing unintended impurities from entering the light emitting element. The barrier film 410a that prevents diffusion is laminated using an adhesive. The material 410b is an aramid resin film, and the barrier film 410a is an inorganic material containing silicon and nitrogen. It is a flexible membrane.

[0124] <<Opposite substrate>> The substrate applicable to the counter substrate 470 may be the same as the substrate 410 as long as it has light-transmitting properties. A substrate can be used.

[0125] The structures that can be used on the surface of the opposing substrate 470 include microlenses and uneven structures. These structures can be produced by stamping, vacuum forming, blasting, and frosting. Alternatively, a film or the like having a pre-formed uneven surface may be laminated. A substrate having a thickness of 100 nm may also be used.

[0126] By providing these structures on the light emitting element 450 side of the counter substrate 470, the light emitting element 450 The light emitted by these can enter the opposing substrate 470 at various angles. By providing the structure on the light extraction side of the opposing substrate 470, the light emitted by the light emitting element 450 The light is emitted from the opposing substrate 470 to the outside at various angles. As a result, it becomes difficult to reflect the light emitted by the light emitting element 450 to the outside. This can improve extraction efficiency.

[0127] <Detection circuit, display pixel circuit> The transistor 122(2) of the detection circuit includes a gate 161, a gate insulating film 162, a semiconductor layer 163, a first electrode 165a, and a second electrode 165b. The transistor 122(2) is covered to prevent unintended diffusion of impurities into the semiconductor layer 163. It may be suppressed.

[0128] The display pixel circuit includes a transistor 125. The transistor 125 is connected to the transistor 12 If it is formed in the same process as 2(2), the manufacturing process can be simplified.

[0129] The capacitor 126 includes a conductive layer including the gate 161 and a conductive layer including the second electrode 165b. The gate insulating film 162 is provided.

[0130] <Photoelectric conversion element> The photoelectric conversion element 121B(3) is made up of a p-type amorphous silicon layer, an i-type amorphous silicon layer, and It includes a silicon layer and an n-type amorphous silicon layer.

[0131] The p-type amorphous silicon layer is connected to the second electrode of the transistor 122(2) through the opening 178. The n-type amorphous silicon layer is electrically connected to the electrode 165b through the opening 425. Electrically connects to VPO.

[0132] <Planarization layer> The planarization layer 421a and the planarization layer 421b are formed on the structure such as the transistor 122(2). The wiring VPO and the wiring VPR are formed by the planarizing layer 421a and the planarizing layer 422b. It is located between 21b.

[0133] <Display pixels> The display pixel includes a subpixel 150D(R). The subpixel 150D(R) is a light-emitting module 480. and a display pixel circuit including a transistor 125.

[0134] The light emitting module 480 includes a light emitting element 450 and a color layer 467CF.

[0135] The light emitting element 450 has a lower electrode 451, an upper electrode 452, and a light emitting element containing a light emitting organic compound therebetween. By selecting and using a light-emitting organic compound, a light-emitting layer 453 is formed. The layer 453 containing an organic compound can be made to emit white light. A structure using multiple luminescent organic compounds that emit complementary colors, or red Examples of the light-emitting element include a structure using an organic compound that emits green and blue light. In addition, a light-transmitting conductive film stacked on a reflective conductive film is used as the lower electrode 451, and a semi-transparent conductive film is used as the lower electrode 451. A semi-reflective conductive film can be applied to the upper electrode 452. This forms a microcavity, and light of a predetermined wavelength (indicated by an upward arrow in the figure) is emitted from the light emitting element 450. (shown by ) can be extracted efficiently.

[0136] The partition wall 428 is on the planarizing layer 421b and has an opening at a position overlapping the lower electrode 451. Also, an opening 428h is provided at a position overlapping with the photoelectric conversion element 121B(3). 428h is a filter that effectively blocks light (indicated by a downward arrow in the figure) that enters the imaging pixel 110D from the outside. The light is efficiently captured by the photoelectric conversion element 121B(3).

[0137] A spacer 429 is on the partition 428 .

[0138] When the upper electrode 452 of the light emitting element 450 overlaps with the photoelectric conversion element 121B(3), A light-transmitting conductive film (for example, a semi-transparent and semi-reflective conductive film) is used for the upper electrode 452. As a result, light incident on the imaging pixel 110D from the outside is incident on the photoelectric conversion element 121B(3). It can be reached.

[0139] <Other configurations> The imaging pixel 110D includes a light-shielding layer 467BM. Openings are provided at positions where the light source 121B overlaps the photoelectric conversion element 121B(3) and at positions where the light source 121B overlaps the photoelectric conversion element 121B(3). An optical layer 467BM and a colored layer 467CF can be provided on the counter substrate 470 side.

[0140] A filler 426 is present between the light emitting element 450 and the opposing substrate 470. The filler 426 may be: For example, an inert gas with a reduced amount of unintentional impurities or a transparent material with a refractive index higher than that of air. An example of such a material is a resin having optical properties.

[0141] The sealing material surrounding the region where the imaging pixels are provided bonds the substrate 410 and the counter substrate 470 together. Alternatively, the filler 426 may be used to bond the substrate 410 and the opposing substrate 470 together. It is possible to configure it so that it is combined with other components.

[0142] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0143] (Fourth embodiment) In this embodiment, a configuration of an imaging device having a display function according to one embodiment of the present invention will be described with reference to FIGS. This will be explained with reference to FIG.

[0144] FIG. 8A is a block diagram illustrating a configuration of an imaging device 200 having a display function according to one embodiment of the present invention. 8(B) is a block diagram of the readout circuit 23 included in the imaging device 200 shown in FIG. 8(A). 1 is a block diagram illustrating the configuration of the .

[0145] FIG. 9 shows a readout circuit and a sensing circuit for an imaging pixel that can be applied to the imaging device 200. FIG.

[0146] The imaging device 200 described in this embodiment has a display function and supplies a first imaging signal. a first imaging pixel 110D(1) having a detection circuit capable of detecting a second imaging signal; an imaging panel including a second imaging pixel 110D(2) having a detection circuit capable of supplying and a readout circuit 230 to which the first and second imaging signals are supplied. (See FIG. 8(A) and FIG. 8(B)).

[0147] The readout circuit 230 amplifies the first imaging signal to a first amplified signal and supplies the amplified signal. a first amplifier 225(1) that amplifies the second imaging signal into a second amplified signal and supplies the amplified signal; a second amplifier 225(2) that can output a first amplified signal or a second amplified signal; The signal processing circuit 220(1) is provided with a selection circuit 220(1) that can select and supply one of the signals.

[0148] This allows the imaging pixels that read the signals to be arranged over a wide area of ​​the imaging panel 100D. The selection circuit 220(1) can be used to select from a number of imaging pixels. , for example, half of the plurality of image signals supplied by a plurality of image pixels provided in a wide range. The signal amplified by the amplifier is then sent to the selection circuit 2. 20(1). As a result, the signal processing speed can be increased or It is possible to provide a novel imaging device that is resistant to noise and is less prone to malfunction.

[0149] The imaging panel 100D is arranged in 2n rows and 2m columns (n ​​and m are integers of 1 or more). It includes a plurality of imaging pixels 110D (see FIG. 8(A)).

[0150] A set of wirings PR, TX and SE is arranged for each row of imaging pixels, and a set of wirings P R, wiring TX, and wiring SE are all connected to the imaging pixels in that row (FIG. 8(B)). reference).

[0151] A set of wiring VPO, wiring VPR, wiring PO, and wiring VPI is arranged for each column of imaging pixels, A set of wiring VPO, wiring VPR, wiring PO, and wiring VPI are all imaging pixels in that column. The wiring PO(1) is electrically connected to the imaging pixel 100D(1). The wiring PO(2) is electrically connected to the imaging pixel 100D(2).

[0152] The imaging device 200 also includes a driving circuit 240(0) and a driving circuit 240(1) ( See Figure 8(A)).

[0153] The imaging panel 100D with a display function has 4×4=16 display pixels in one imaging pixel 110D. Pixel 150D (see FIG. 8(A) and FIG. 8(B)). It has 4 x 2n scanning lines extending in the direction of the image sensor and 4 x 2m image signal lines extending in the column direction. do.

[0154] 4 × 2m display pixels in the row direction are electrically connected to one scan line, and 4 × 2n display pixels in the column direction are Each display pixel is connected to one image signal line to form a matrix.

[0155] The imaging device 200 includes a scanning line driving circuit 250(0) and a scanning line driving circuit 250(1). (See FIG. 8(A)). The scanning line driver circuit can supply a selection signal to the scanning lines.

[0156] In addition, a signal line driver circuit (not shown) can supply image signals to the image signal lines. .

[0157] The display pixel 150D to which the selection signal is supplied has an image signal written therein. It is possible to display according to the number.

[0158] The selection signal and the image signal are transmitted using wiring different from the wiring for supplying signals to the imaging pixels. This allows the display pixels to be driven independently of the operation of the imaging pixels. do.

[0159] Below, individual elements constituting an imaging device 200 applicable to an imaging panel according to one embodiment of the present invention will be described. This article explains:

[0160] <Drive circuit> The driving circuit 240(0) supplies signals to the wirings PR, TX, and SE in odd-numbered rows. The wirings PR, TX, and SE in the odd-numbered rows can be connected to the imaging pixels 1 in the odd-numbered rows. 10D (see FIG. 8(A)).

[0161] The driving circuit 240(1) supplies signals to the wirings PR, TX, and SE in the even-numbered rows. The wirings PR, TX, and SE in the even-numbered rows can be connected to the imaging pixels 1 in the even-numbered rows. It is possible to provide a signal to the 10D.

[0162] By using the drive circuit 240(0) and the drive circuit 240(1) that operate independently, An image captured using the drive circuit 240(0) and an image captured using the drive circuit 240(1) are It can be calculated.

[0163] For example, the position of an object can be identified by finding the difference between two images taken under different lighting conditions. Alternatively, two images with the same lighting conditions can be summed to increase the signal. It is possible.

[0164] An area 249 where no circuit is provided is provided, and the area 249 is the driving circuit 240(0 ) and the driving circuit 240(1) are divided into two areas. The driver circuit 240(1) is divided and arranged on a flexible substrate, thereby forming a region 2. It is possible to provide an imaging panel that can be bent at 49. By arranging the circuit in such a way that the stress caused by bending is not concentrated on the circuit, It is possible.

[0165] The driving circuit 240(0) and the driving circuit 240(1) each have n pairs of wirings SE and P The driver circuit supplies signals to the R and wiring TX in order to the n rows of imaging pixels. It is sufficient to be able to perform this operation, and it can be configured using a known sequential circuit. A driving circuit can be configured using a resistor.

[0166] <Readout circuit> An example of the configuration of a selection circuit and an amplifier applicable to the readout circuit 230 is shown in FIG. Explain with reference to the above.

[0167] 9 is a circuit diagram illustrating the read circuit 230. Specifically, the selection circuit 220(1) , including circuit diagrams of the first amplifier 225(1) and the second amplifier 225(2). The first imaging pixel 110D(1) and the second imaging pixel 110D(2) can be read out using the selection circuit 220(1). A circuit diagram of the sensing circuit included in the second imaging pixel 110D(2) is also shown.

[0168] The selection circuit 220(1) has a gate electrically connected to a terminal S1 to which a first selection signal is supplied. The first electrode is electrically connected to the read terminal READ_OUT, and the second electrode is A transistor 221(1) electrically connected to the line 222(1), and a gate of the transistor 221(1) The first electrode is electrically connected to the terminal S2 to which a signal is supplied, and the second electrode is connected to the read terminal READ_O. A transistor electrically connected to the UT and having a second electrode electrically connected to the wiring 222(2). and a starter 221(2).

[0169] The first amplifier 225(1) has a gate electrically connected to the wiring PO(1) and a first electrode The first electrode is electrically connected to the wiring 222(1), and the second electrode is electrically connected to the wiring SFGND. The transistor 226(1) has a gate electrically connected to the wiring BR and a first electrode A transistor whose second electrode is electrically connected to the wiring VPO and whose second electrode is electrically connected to the wiring PO(1) and a transistor 226(2).

[0170] The second amplifier 225(2) has a gate electrically connected to the wiring PO(2) and a first electrode The first electrode is electrically connected to the wiring 222(2), and the second electrode is electrically connected to the wiring SFGND. The transistor 227(1) has a gate electrically connected to the wiring BR and a first electrode A transistor whose second electrode is electrically connected to the wiring VPO(2) is electrically connected to the wiring PO(3). and a transistor 227(2).

[0171] The wiring PO(1) is electrically connected to the first imaging pixel 110D(1), and the wiring PO (2) is electrically connected to the second imaging pixel 110D(2). It is electrically connected to the terminal READ_OUT via a load.

[0172] <<Readout Circuit Driving Method>> The readout circuit can be driven by the following steps.

[0173] Here, one method for operating a readout circuit configured using n-type transistors is described. Examples are given below, but are not limited to these.

[0174] A sufficiently high power supply potential is supplied to the VPO wiring, and a sufficiently low power supply potential is supplied to the SFGND wiring. will be provided.

[0175] In the first step of the readout circuit driving method, the first imaging pixel 110D (1 ) and the second imaging pixel 110D(2) have already been irradiated with light, and the wirings SE, PR and The wiring TX is in a state where a low signal is supplied. The transistor 122(3), the transistor 122(2) and the transistor 122(3) of the image pixel 110D(1) Transistor 122(1) is in the off state. As a result, each node FD is The potential is a function of the amount of light received.

[0176] In the first step, a high signal is supplied to the wiring BR, and the transistors 226(2) and and transistor 227(2) are turned on. This turns on the wiring PO(1) and the wiring P O(2) has a potential corresponding to the potential of the wiring VPO. The potential of the wiring 222(1) and the wiring 222(2) becomes the potential of the wiring SFGND. It will be in accordance with the

[0177] In the second step, a low signal is supplied to the wiring BR, and the transistors 226(2) and Also, a high signal is supplied to the wiring SE, and the first transistor 227(2) is turned off. The transistor 122(3) of the first imaging pixel 110D(1) is turned on. The line PO(1) is the current flowing through the transistor 122(4) of the first imaging pixel 110D(1). The current flowing through the transistor 122(4) is a potential corresponding to the current of the node FD. As a result, the wiring PO(1) is connected to the first imaging pixel 110D(1). The second imaging pixel 110D(2) has a potential corresponding to the amount of light incident thereon. By operating, the wiring PO(2) transmits light irradiated onto the second imaging pixel 110D(2). The potential becomes proportional to the amount of

[0178] In the third step, a high signal is applied to terminal S1, turning on transistor 221(1). This turns on the transistor 221(2) and supplies a low signal to the terminal S2, turning off the transistor 221(2).

[0179] The transistor 226(1) is turned on in response to the amount of light incident on the first imaging pixel 110D(1). The potential is supplied to the gate from the wiring PO(1). 1) The current flowing from the readout terminal READ_OUT to the wiring SFGND varies depending on the amount of light. It will be in accordance with the

[0180] In the fourth step, a low signal is supplied to the terminal S1, and the transistor 221(1) is turned on. and applies a high signal to terminal S2, turning on transistor 221(2).

[0181] The transistor 227(1) is turned on in response to the amount of light incident on the second imaging pixel 110D(2). The potential is supplied to the gate from the wiring PO(2). 1) The current flowing from the readout terminal READ_OUT to the wiring SFGND varies depending on the amount of light. It will be in accordance with the

[0182] Through the above steps, the first imaging pixel 110D(1) and the second imaging pixel 110D( 2) can sequentially read out the amount of light irradiated.

[0183] Display pixels The display pixel 150D includes a display element and a pixel circuit that drives the display element. For example, a liquid crystal element, an organic electroluminescence element, or the like can be used.

[0184] <Scanning line driving circuit> The scanning line driving circuit 250(0) and the scanning line driving circuit 250(1) each have 2n scanning lines. For example, a known sequential circuit is used to configure the scanning line driver circuit, and a selection signal is supplied to the scanning line. The signal can be sequentially supplied to 2n rows of display pixels. For example, scanning the shift register It can be applied to a line driver circuit.

[0185] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0186] (Embodiment 5) In this embodiment, the present invention is applied to an imaging panel 100D having a display function according to an embodiment of the present invention. A method for driving the display pixel 150D that can achieve this will be described with reference to FIGS. 11 and 12. Reveal.

[0187] FIG. 11A shows a display pixel applicable to the sub-pixel 150D(1) included in the display pixel 150D. 11(B) is a circuit diagram of the display pixel circuit shown in FIG. 11(A). 1 is a timing chart illustrating the operation of the present invention.

[0188] FIG. 12(A) shows a display pixel circuit applicable to a sub-pixel 150D(2) having a different configuration from that shown in FIG. 12(B) is a circuit diagram of the pixel circuit shown in FIG. 12(A). 1 is a timing chart.

[0189] <Method for determining the distance from the imaging panel to the subject> The imaging panel 100D with a display function includes display pixels and imaging pixels. The image pixel 110D can capture an image of the subject in a state in which the display pixel 150D emits light. Furthermore, the imaging pixel 110D captures an image of the subject in a state where the display pixel 150D does not emit light. In this specification, the former is referred to as a bright image, and the latter is referred to as a dark image. .

[0190] When the imaging panel 100D having a display function is used as a touch panel, the subject is Whether or not the lens is in contact with the 100D can be determined from the difference between the bright and dark images. To do this, a dark image containing the background image is subtracted from a bright image, and the subject is captured in the bright areas. The area in contact with the image panel 100D can be determined.

[0191] <Display element driving method 1> The method of driving the sub-pixel 150D(1) for capturing a bright image and a dark image will be explained with reference to FIG. and explain.

[0192] The subpixel 150D(1) shown in FIG. 11(A) includes five n-type transistors M1 to M5. The display device includes a capacitor C1 and a display element EL using an organic electroluminescence element.

[0193] According to the driving method of the display pixel circuit, not only can bright and dark images be captured, It is possible to correct variations in the threshold value of the transistor M2 that supplies current to the display element EL. do.

[0194] The subpixel 150D(1) is electrically connected to the wirings G1 to G3. TA is electrically connected to the wiring V0, the wiring ANODE, and the wiring CATHODE.

[0195] The wiring DATA is a wiring that can supply an image signal. The signal d(n) is an image signal to be supplied to the display pixels in the nth row, and the signal d(n+1) is an image signal to be supplied to the nth row. The image signal is supplied to the display pixels in the second row. Wiring that can supply a voltage low enough to allow the subpixel 150D(1) to operate correctly Similarly, the wiring ANODE is a wiring that can supply a sufficiently high potential.

[0196] The frame shown in FIG. 11(B) corresponds to the period of one frame of an image, and includes periods T1 and T2. Each of these corresponds to one horizontal period, and period T3 corresponds to a vertical blanking period.

[0197] In the first step (corresponding to period A in FIG. 11B), the wiring G1 and the wiring G A low signal is supplied to the wiring G2 and a high signal is supplied to the wiring G3. Transistors M3 and M4 are turned off, and transistor M5 is turned on. As a result, the potential of the node N is initialized.

[0198] In the second step (corresponding to period B in the figure), a high signal is applied to the wire G1, and a low signal is applied to the wires G2 and G3. A low signal is supplied to the wiring G1 and the wiring G2. Transistor M3 is turned on, and transistors M4 and M5 are turned off. An image signal supplied by the wiring DATA is written to the capacitor C1, and the voltage of the transistor M2 is applied to the node N. A potential corresponding to the threshold value is written.

[0199] In the third step (corresponding to period C in the figure), a low signal is applied to the wire G1, and a low signal is applied to the wires G2 and G3. This supplies a high signal to the wiring G1 and the wiring G2. The transistor M3 is turned off, and the transistors M4 and M5 are turned on. 1 applies a voltage according to the image signal and the threshold of transistor M2 to the gate and source of transistor M2. As a result, a current flows from the wire ANODE to the wire CATHODE in series. The current flows through the transistor M2 connected to the display element EL. emits light roughly proportional to the magnitude of the current.

[0200] In the fourth step (corresponding to period D in the figure), a low potential is supplied to the wiring G3. This turns off the transistor M5, and the display element EL is turned off. As a result, a dark image can be captured using the imaging panel 100D. It becomes possible to obtain.

[0201] In the fifth step (corresponding to period E in the figure), a high potential is supplied to the wiring G3. This turns on the transistor M5, causing the display element EL to receive the image signal already written therein. As a result, a bright image can be acquired using the imaging panel 100D. It becomes possible.

[0202] By repeating the above first to fifth steps, the imaging panel 100D A pair of bright and dark images can be captured for each frame.

[0203] Note that the order of the fourth and fifth steps can be reversed to capture a bright image first and then a dark image. You can also take photos of the following.

[0204] <Display element driving method 2> The method of driving the sub-pixel 150D(2) for capturing a bright image and a dark image will be explained with reference to FIG. and explain.

[0205] The subpixel 150D(2) shown in FIG. 12A includes six n-type transistors M1 to M6. The display device includes a capacitor C1 and a display element EL using an organic electroluminescence element.

[0206] According to the driving method of the display pixel circuit, not only can bright and dark images be captured, It is possible to correct variations in the threshold value of the transistor M2 that supplies current to the display element EL. do.

[0207] The subpixel 150D(2) is electrically connected to the wirings G1 to G3. TA, wiring V0, wiring V1, wiring ANODE and wiring CATHODE are electrically connected. can be.

[0208] The wiring DATA is a wiring that can supply an image signal. The signal d(n) is an image signal to be supplied to the display pixels in the nth row, and the signal d(n+1) is an image signal to be supplied to the nth row. The image signal is supplied to the display pixels in the second row. Wiring that can supply a voltage low enough to allow the subpixel 150D(2) to operate correctly Similarly, the wiring ANODE is a wiring that can supply a sufficiently high potential.

[0209] The frame shown in FIG. 12(B) corresponds to the period of one frame of an image, and includes periods T1 and T2. Each of these corresponds to one horizontal period, and period T3 corresponds to a vertical blanking period.

[0210] In the first step (corresponding to period A in FIG. 12B), the wiring G1 and the wiring G A low signal is supplied to the wiring G2, a high signal is supplied to the wiring G3, and a low potential is supplied to the wiring V1. Therefore, transistor M1, transistor M3, transistor M4 and transistor M5 As a result, the potential of the node N becomes equal to the potential of the line V1. The potential is initialized to the potential of the row that supplies the voltage.

[0211] In the second step (corresponding to period B in the figure), a high signal is applied to the wire G1, and a low signal is applied to the wires G2 and G3. A low signal is supplied to the wiring G3 and a low potential is supplied to the wiring V1. Transistor M1 and transistor M3 are on, and transistor M4 and transistor M6 are on. As a result, the image signal supplied by the wiring DATA is written to the capacitor C1, and the A potential corresponding to the threshold value of the transistor M2 is written to the node N.

[0212] In the third step (corresponding to period C in the figure), a low signal is applied to the wiring G1 and the wiring G3. A high signal is supplied to the wiring G2 and a low potential is supplied to the wiring V1. Transistor M1, transistor M3 and transistor M6 are turned off, and transistors M4 and The transistor M5 is turned on. The capacitor C1 is connected to the image signal and the threshold voltage of the transistor M2. A voltage corresponding to the voltage applied between the gate and source of transistor M2 is applied to the wiring AN A current flows from the ODE to the wire CATHODE, and the transistor M2 and the display The current flows through the element EL. The display element EL emits light in proportion to the magnitude of the current.

[0213] In the fourth step (corresponding to period D in the figure), a high signal is applied to wire G3 and a low signal is applied to wire V1. This turns on the transistor M6, which in turn supplies a high potential to the display element EL. As a result, the image pickup panel can be brightened regardless of the image signal that has already been written. It is possible to obtain bright images using the 100D.

[0214] In the fifth step (corresponding to period E in the figure), a high signal is applied to wire G3 and a low signal is applied to wire V1. This turns on the transistor M6, causing the display element EL to go low. As a result, the image pickup panel 1 can be darkened regardless of the image signal that has already been written. It is possible to capture dark images using 00D.

[0215] In the sixth step (corresponding to period F in the figure), a low signal is supplied to the wiring G3. This turns off the transistor M6, and the display element EL is turned off. Adjust the brightness accordingly.

[0216] By repeating the above first to sixth steps, the imaging panel 100D A pair of bright and dark images can be captured for each frame.

[0217] Note that the order of the fourth and fifth steps can be reversed to capture a bright image first and then a dark image. You can also take photos of the following.

[0218] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0219] (Sixth embodiment) In this embodiment, the transistor can be applied to the imaging panel of one embodiment of the present invention. An oxide semiconductor film will be described.

[0220] Impurities such as water or hydrogen, which act as electron donors, are reduced, and oxygen deficiency is eliminated. The oxide semiconductor is highly purified by reducing the amount of Semiconductors are i-type (intrinsic semiconductors) or very close to i-type. Therefore, a transistor having a channel formation region in a highly purified oxide semiconductor film has an off-state current The current is extremely small and highly reliable.

[0221] Specifically, the present invention relates to an oxide semiconductor film having a highly purified oxide semiconductor film as a channel formation region. The small fringe current can be proven by various experiments. For example, 0 6 Even in a device with a channel length of 10 μm, the voltage between the source and drain electrodes In the drain voltage range of 1V to 10V, the off-state current was measured by the semiconductor parameter analyzer. Below the riser measurement limit, i.e., 1×10 -13 It can achieve a characteristic of A or below. In this case, the off-state current normalized by the transistor channel width is 100 zA / μm or less. In addition, by connecting the capacitor and the transistor, Off-state current is measured using a circuit that controls the charge flowing out of the capacitor with the transistor. In the measurement, a highly purified oxide semiconductor film was used as a channel of the transistor. The on / off state of the transistor is determined based on the change in the amount of charge per unit time of the capacitor element. The current was measured. As a result, the voltage between the source and drain electrodes of the transistor was 3V. In this case, it was found that an even smaller off-state current of several tens of yA / μm can be obtained. Therefore, a transistor using a highly purified oxide semiconductor film for a channel formation region has an off-state current The current is significantly smaller than that of a transistor using crystalline silicon.

[0222] Unless otherwise specified, the off-state current in this specification refers to the off-state current in an n-channel transistor. In this case, the drain is set to a higher potential than the source and gate, and the source potential is set to a lower potential. When the gate potential is below 0V, the current that flows between the source and drain is Alternatively, in this specification, the off-state current refers to the off-state current in a p-channel transistor. In this case, the drain is set to a lower potential than the source and gate, and the source potential is set to When the gate potential is 0V or higher, current flows between the source and drain. It means electric current.

[0223] The oxide semiconductor used in the transistor is at least indium (In) or nickel (Ni). It is preferable that the oxide semiconductor contains lead (Zn). In addition to these, gallium (Ga) is used as a stabilizer to reduce the variation in characteristics. It is preferable that the stabilizer contains tin (Sn). It is also preferable to have hafnium (Hf) as a stabilizer. It is preferable to have aluminum (Al) as the stabilizer. It is preferable that the material contains zirconium (Zr).

[0224] Among oxide semiconductors, In-Ga-Zn oxides and In-Sn-Zn oxides are carbon-based. Unlike silicon nitride, gallium nitride, or gallium oxide, This makes it possible to produce transistors with excellent electrical characteristics, and is suitable for mass production. Also, unlike silicon carbide, gallium nitride, or gallium oxide, The In-Ga-Zn oxide is used to form a transistor with excellent electrical properties on a glass substrate. It is also possible to manufacture larger substrates.

[0225] Other stabilizers include lanthanides such as lanthanum (La) and cerium ( Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), hol Mium (Ho), Erbium (Er), Thulium (Tm), Ytterbium (Yb), Ru It may contain one or more of tetraethion (Tetrium) (Lu).

[0226] For example, oxide semiconductors include indium oxide, gallium oxide, tin oxide, zinc oxide, and I n-Zn oxides, Sn-Zn oxides, Al-Zn oxides, Zn-Mg oxides, S n-Mg oxide, In-Mg oxide, In-Ga oxide, In-Ga-Zn oxide (also written as IGZO), In-Al-Zn oxide, In-Sn-Zn oxide, Sn-Ga-Zn oxide, Al-Ga-Zn oxide, Sn-Al-Zn oxide, I n-Hf-Zn oxide, In-La-Zn oxide, In-Pr-Zn oxide, In -Nd-Zn oxide, In-Sm-Zn oxide, In-Eu-Zn oxide, In- Gd-Zn oxide, In-Tb-Zn oxide, In-Dy-Zn oxide, In-H Oxide based on Zn, In-Er-Zn, In-Tm-Zn, In-Yb -Zn-based oxides, In-Lu-Zn-based oxides, In-Sn-Ga-Zn-based oxides, In- Hf-Ga-Zn oxide, In-Al-Ga-Zn oxide, In-Sn-Al-Zn In-Sn-Hf-Zn oxide, In-Hf-Al-Zn oxide It is possible.

[0227] For example, In-Ga-Zn oxide means an oxide containing In, Ga, and Zn. The ratio of In, Ga, and Zn is not important. In-Ga-Zn oxides have a sufficiently high resistance in the absence of an electric field, and The flow can be made sufficiently small and the mobility is high.

[0228] For example, In:Ga:Zn=1:1:1 (=1 / 3:1 / 3:1 / 3) or In:G In-Ga-Zn oxide with an atomic ratio of a:Zn=2:2:1 (=2 / 5:2 / 5:1 / 5) Alternatively, In:Sn:Zn=1: 1:1(=1 / 3:1 / 3:1 / 3), In:Sn:Zn=2:1:3(=1 / 3:1 / 6:1 / 2) or In:Sn:Zn=2:1:5(=1 / 4:1 / 8:5 / 8) It is preferable to use an In-Sn-Zn oxide with a molecular ratio or an oxide with a composition close to that.

[0229] For example, high mobility can be obtained relatively easily with In-Sn-Zn oxides. Therefore, even in In-Ga-Zn oxides, the mobility can be increased by reducing the defect density in the bulk. It can be done.

[0230] The oxide semiconductor film may have, for example, a non-single crystal structure. Aligned Crystal, polycrystal, and microcrystal are included in non-single crystal. The defect level density of the oxide semiconductor with CAAC is higher than that of the oxide semiconductor with CAAC. AAC-OS(C Axis Aligned Crystalline Oxide It is called a semiconductor.

[0231] The oxide semiconductor film may include, for example, a CAAC-OS. The oxide semiconductor has a c-axis orientation and a-axis and / or b-axis are not aligned macroscopically. .

[0232] The oxide semiconductor film may have, for example, microcrystals. The microcrystalline oxide semiconductor film has a thickness of, for example, 1 nm to 10 nm. The oxide semiconductor film contains microcrystals of a size of 100 nm.

[0233] Note that the oxide semiconductor film may be a mixed film of CAAC-OS and a microcrystalline oxide semiconductor. The mixed film has, for example, a microcrystalline oxide semiconductor region and a CAAC-OS region. The mixed film may be a film including, for example, a microcrystalline oxide semiconductor region and a CAAC-OS region. It may have a laminated structure.

[0234] Note that the oxide semiconductor film may be, for example, single-crystal.

[0235] The oxide semiconductor film has a plurality of crystal parts, and the c-axes of the crystal parts are aligned along a normal vector of a surface where the crystal parts are formed. It is preferable that the crystal orientations are aligned in a direction parallel to the normal vector of the surface. The directions of the a-axis and the b-axis may be different between the oxide semiconductor films. An example of this is a CAAC-OS film.

[0236] The crystals in the CAAC-OS film are sized to fit within a cube with sides of less than 100 nm. In addition, transmission electron microscope (TEM) The image observed under a microscope shows that the CAAC-OS film contains The boundary between the crystalline regions is not clear. Therefore, the CAAC-OS The film suppresses the decrease in electron mobility caused by grain boundaries.

[0237] The crystal parts included in the CAAC-OS film have, for example, a c-axis that is perpendicular to the plane of the CAAC-OS film. Aligned in a direction parallel to the line vector or the normal vector of the surface and perpendicular to the ab plane When viewed from the normal direction, the metal atoms are arranged in a triangular or hexagonal shape, and when viewed from the direction perpendicular to the c-axis, Metal atoms are arranged in layers, or metal atoms and oxygen atoms are arranged in layers. The orientation of the a-axis and the b-axis may be different between the two. When describing "straight," it also refers to the range of 80° to 100°, preferably 85° to 95°. In addition, when simply describing it as parallel, it is preferable to use an angle between -10° and 10°. This also includes the range of -5° to 5°.

[0238] In the CAAC-OS film, the distribution of the crystal parts may not be uniform. In the process of forming the C-OS film, when crystal growth is performed from the surface side of the oxide semiconductor film, The proportion of crystalline parts may be higher near the surface than near the growth surface. By adding impurities to the AC-OS film, the crystals of the crystal part in the impurity-doped region are Sexuality may also decrease.

[0239] The c-axis of the crystalline part in the CAAC-OS film is the normal vector of the surface on which the CAAC-OS film is formed. The CAAC-OS film is oriented parallel to the normal vector of the film or surface. Depending on the shape (cross-sectional shape of the surface to be formed or cross-sectional shape of the surface), they may face in different directions. The c-axis of the crystal part is the normal vector of the surface on which the CAAC-OS film is formed. The crystals are aligned parallel to the normal vector of the vector or surface. or by subjecting the film to a crystallization treatment such as a heat treatment after the film formation. .

[0240] The electrical characteristics of a transistor using a CAAC-OS film change when irradiated with visible light or ultraviolet light. Therefore, the transistor has high reliability.

[0241] The CAAC-OS film is formed by sputtering, for example, using a polycrystalline metal oxide target. When ions collide with the target, the particles contained in the target are The crystal region is cleaved from the ab plane, and the crystal is formed into a flat or pellet-shaped strip with a plane parallel to the ab plane. In this case, the plate-shaped or pellet-shaped particles may peel off as puttering particles. The sputtered particles reach the substrate while maintaining their crystalline state, resulting in CAAC-OS A film can be formed.

[0242] In addition, the following conditions are preferably applied to form the CAAC-OS film.

[0243] By reducing the amount of impurities mixed in during film formation, it is possible to prevent the crystal state from being destroyed by impurities. For example, the impurity concentrations (hydrogen, water, carbon dioxide, nitrogen, etc.) present in the processing chamber can be In addition, the impurity concentration in the deposition gas can be reduced. A deposition gas at a temperature of -80°C or lower, preferably -100°C or lower, is used.

[0244] In addition, by increasing the substrate heating temperature during film formation, the migration of sputtered particles after they reach the substrate is reduced. Specifically, the substrate heating temperature is set to 100°C or higher and 740°C or lower, preferably The film is formed at a temperature between 200°C and 500°C. When plate-shaped or pellet-shaped sputtering particles reach the substrate, they migrate on the substrate. Sputtering occurs and the flat surface of the sputtered particle adheres to the substrate.

[0245] In addition, increasing the oxygen ratio in the deposition gas and optimizing the power reduces plasma damage during deposition. The oxygen ratio in the deposition gas is preferably 30% by volume or more, and more preferably 100% by volume or more. The product is %.

[0246] As an example of the target, an In-Ga-Zn oxide target will be described below.

[0247] InO X powder, GaO Y Powder and ZnO Z The powders are mixed in a predetermined molar ratio and pressurized. By heat treatment at a temperature between 1000℃ and 1500℃, polycrystalline In-Ga -Zn-based oxide target. Note that X, Y, and Z are arbitrary positive numbers. The molar ratio of a certain amount is, for example, InO X powder, GaO Y Powder and ZnO Z Powder is 2:2: 1, 8:4:3, 3:1:1, 1:1:1, 4:2:3 or 3:1:2. The type of powder and the molar ratio of the powder to be mixed can be changed depending on the target to be produced. That's fine.

[0248] Note that alkali metals are not elements that constitute an oxide semiconductor, and are therefore considered impurities. In particular, lithium-earth metals are impurities when they are not elements that constitute oxide semiconductors. Among the alkali metals, Na is preferable when the insulating film in contact with the oxide semiconductor film is an oxide. Diffusion into the insulating film + In addition, Na is present in the oxide semiconductor film. It breaks the bond between the metal and oxygen that make up the conductor, or it interrupts that bond. For example, the threshold voltage shifts to the negative direction, resulting in a normally on state and a decrease in mobility. This causes degradation of the electrical characteristics of the transistor, and also causes variations in the characteristics. Specifically, the measured value of the Na concentration by secondary ion mass spectrometry is 5 × 10 16 / cm 3 below , preferably 1 x 10 16 / cm3 or less, more preferably 1 × 10 15 / cm 3 The following Similarly, the measured value of Li concentration is 5×10 15 / cm 3 Below, preferably 1 x 1 0 15 / cm 3 Similarly, the measured value of the K concentration should be 5 x 10 15 / cm 3 Below Below, preferably 1 x 10 15 / cm 3 The following would be appropriate.

[0249] In addition, when a metal oxide containing indium is used, the bond energy with oxygen is Silicon and carbon, which are larger than indium, break the bond between indium and oxygen, creating an oxygen vacancy. Therefore, when silicon or carbon is mixed into the oxide semiconductor film, As with alkali metals and alkaline earth metals, degradation of the electrical characteristics of transistors occurs. Therefore, it is desirable that the concentrations of silicon and carbon in the oxide semiconductor film be low. Specifically, the measured values ​​of C concentration or Si concentration by secondary ion mass spectrometry is 1 x 10 18 / cm 3 With the above configuration, the electrical characteristics of the transistor can be improved. This can prevent deterioration of the characteristics, thereby improving the reliability of the PLD or semiconductor device.

[0250] In addition, depending on the conductive material used for the source electrode and the drain electrode, The metal in the drain electrode may extract oxygen from the oxide semiconductor film. The region of the nitride semiconductor film that is in contact with the source electrode and the drain electrode is depleted due to the formation of oxygen vacancies. It is made n-type.

[0251] The n-type region functions as a source region or a drain region, so the oxide semiconductor The contact resistance between the film and the source and drain electrodes can be reduced. Therefore, the formation of an n-type region increases the mobility and on-current of the transistor. This allows for high-speed operation of a switch circuit using transistors. It is possible.

[0252] The extraction of oxygen by the metal in the source and drain electrodes This can occur when forming the source and drain electrodes by sputtering or other methods. This can also occur due to a heat treatment performed after the formation of the rain electrode.

[0253] In addition, the region to be made n-type is made of a conductive material that easily bonds with oxygen as the source electrode and the drain electrode. The conductive material can be, for example, Al, C, or the like. Examples include r, Cu, Ta, Ti, Mo, and W.

[0254] In addition, the oxide semiconductor film is not limited to being composed of a single metal oxide film, but may be composed of a stack of metal oxide films. It may be composed of a plurality of metal oxide films. For example, first to third metal oxide films may be formed in order. In the case of a semiconductor film stacked in a layered manner, the first metal oxide film and the third metal oxide film are The metal oxide film contains at least one of the metal elements constituting the metal oxide film, and has a conduction band below The edge energy is 0.05 eV or more, 0.07 eV or more, or 0. 1 eV or more, or 0.15 eV or more and 2 eV or less, 1 eV or less, 0.5 eV or less The second metal oxide film has a low valence of 0.4 eV or less, which is close to the vacuum level. It is preferable that at least indium is contained, since this increases the carrier mobility.

[0255] When a transistor has the semiconductor film having the above structure, by applying a voltage to a gate electrode, When an electric field is applied to the semiconductor film, the second gold layer in the semiconductor film, which has a lower energy at the bottom of the conduction band, A channel region is formed in the second metal oxide film. The third metal oxide film is provided between the first and second gate insulating films. A channel region can be formed in the metal oxide film of 2.

[0256] The third metal oxide film contains at least one of the metal elements constituting the second metal oxide film. Since the second metal oxide film and the third metal oxide film contain Therefore, the movement of carriers is not easily hindered at the interface. The field effect mobility of the transistor is increased.

[0257] Furthermore, when an interface state is formed at the interface between the second metal oxide film and the first metal oxide film, Since a channel region is also formed in the neighboring region, the threshold voltage of the transistor changes. However, the first metal oxide film contains at least one of the metal elements that make up the second metal oxide film. Since both of them contain one of the elements, a metal oxide film is formed at the interface between the second metal oxide film and the first metal oxide film. Therefore, with the above configuration, the threshold voltage of the transistor and the like are reduced. The variation in electrical characteristics can be reduced.

[0258] In addition, the presence of impurities between the metal oxide films causes the flow of carriers at the interface between each film. A plurality of oxide semiconductor films are stacked to prevent the formation of interfering interface states. If impurities exist between the layers of the laminated metal oxide film, the metal oxide film The continuity of the energy at the bottom of the conduction band is lost, and the carriers are transported near the interface. This is because the impurities between the films are either picked up or disappear due to recombination. By reducing the amount of the metal oxide film, it is possible to form a plurality of metal oxide films each having at least one metal as a main component. Rather than simply stacking, continuous junctions (where the energy of the bottom of the conduction band is especially low between each film) The formation of a continuously changing U-shaped well structure is likely to occur.

[0259] To form continuous junctions, a multi-chamber deposition system equipped with a load lock chamber is required. (sputtering equipment) to continuously stack each film without exposing it to the air. Each chamber in the sputtering equipment must contain impurities for oxide semiconductors. In order to remove as much water as possible, an adsorption type vacuum pump such as a cryopump is used. High vacuum pumping (5 × 10 -7 Pa or more 1×10 -4 It is preferable to Alternatively, a turbomolecular pump and cold trap can be combined to evacuate the chamber from the exhaust system. It is preferable to prevent gas from flowing back into the chamber.

[0260] To obtain a high-purity intrinsic oxide semiconductor, it is not enough to evacuate each chamber to a high vacuum. It is also important to increase the purity of the gas used in sputtering. The dew point of the gas or argon gas is -40°C or less, preferably -80°C or less, more preferably - By keeping the temperature at 100°C or less and using highly purified gas, moisture and other substances are prevented from being absorbed into the oxide semiconductor film. This can prevent as many users as possible from being caught in the system.

[0261] For example, the first metal oxide film or the third metal oxide film may be made of aluminum, silicon, titanium, or the like. Titanium, gallium, germanium, yttrium, zirconium, tin, lanthanum, cerium If the oxide film contains tungsten or hafnium at a higher atomic ratio than the second metal oxide film, Specifically, the first metal oxide film or the third metal oxide film may be a second metal oxide film. The above elements are contained in the film in an amount 1.5 times or more, preferably 2 times or more, and more preferably 3 times or more. It is recommended to use an oxide film containing a high atomic ratio. The above elements bond strongly with oxygen, so they are easily absorbed by the acid. Therefore, the first oxide film has a function of suppressing the occurrence of electron vacancies in the oxide film. The first metal oxide film or the third metal oxide film is formed by forming the second metal oxide film or the third metal oxide film in a state where oxygen vacancies are smaller than those in the second metal oxide film. It is possible to form an oxide film that is difficult to break down.

[0262] Specifically, the second metal oxide film and the first metal oxide film or the third metal oxide film are When both are In-M-Zn oxides, the first metal oxide film or the third metal oxide film The atomic ratio of the first metal oxide film is In:M:Zn=x1:y1:z1. :M:Zn=x2:y2:z2, then y1 / x1 is greater than y2 / x2. The atomic ratio can be set to the value shown in the figure. Note that element M is a metal that has a stronger bond with oxygen than In. group elements, such as Al, Ti, Ga, Y, Zr, Sn, La, Ce, Nd or Hf Preferably, y1 / x1 is set to be 1.5 times or more larger than y2 / x2. More preferably, the ratio of the number of atoms y1 / x1 is greater than the ratio y2 / x2. The atomic ratio should be set so that y1 / The atomic ratio should be set so that x1 is three times larger than y2 / x2. Furthermore, in the second metal oxide film, when y2 is equal to or greater than x2, a stable transistor can be obtained. However, if y2 is three times or more of x2, Since the field effect mobility of the transistor is reduced, y2 is preferably less than three times x2. stomach.

[0263] The thickness of the first metal oxide film and the third metal oxide film is 3 nm or more and 100 nm or less. The thickness of the second metal oxide film is preferably 3 nm or more and 50 nm or less. m or more and 200 nm or less, preferably 3 nm or more and 100 nm or less, and more preferably It is between 3 nm and 50 nm.

[0264] In the three-layer semiconductor film, the first to third metal oxide films are amorphous or The second metal oxide on which the channel region is formed can be either crystalline or amorphous. The crystalline nature of the material film allows the transistor to have stable electrical characteristics. Therefore, the second metal oxide film is preferably crystalline.

[0265] Note that the channel formation region is a region of the semiconductor film of a transistor that overlaps with the gate electrode and The channel region refers to the region sandwiched between the source electrode and the drain electrode. This refers to the region in the core formation region where current mainly flows.

[0266] For example, the first metal oxide film and the third metal oxide film are formed by a sputtering method. When an In-Ga-Zn oxide film formed by the first metal oxide film and the third metal oxide film is used, The oxide film was formed using In-Ga-Zn oxide (In:Ga:Zn=1:3:2 [atomic number The film formation conditions are, for example, as the film formation gas, The gas was argon at 30 sccm and oxygen at 15 sccm, the pressure was 0.4 Pa, and the substrate temperature was The temperature is set to 200°C and the DC power is set to 0.5kW.

[0267] In addition, when the second metal oxide film is a CAAC-OS film, the second metal oxide film is formed by is an In-Ga-Zn oxide (In:Ga:Zn=1:1:1 [atomic ratio]), It is preferable to use a target containing polycrystalline In-Ga-Zn oxide. For example, argon gas at 30 sccm and oxygen gas at 15 sccm are used as the deposition gas. The pressure was set to 0.4 Pa, the substrate temperature to 300°C, and the DC power to 0.5 kW. Cut.

[0268] The transistor may have a structure in which the edge of the semiconductor film is inclined. The end of the membrane may have a rounded structure.

[0269] In addition, when a semiconductor film having a plurality of stacked metal oxide films is used for a transistor, In the above structure, the regions in contact with the source electrode and the drain electrode may be made n-type. This structure increases the mobility and on-current of the transistor, and allows for the development of PLDs or This allows the semiconductor device to operate at high speed. When a semiconductor film having a film is used in a transistor, the region to be made n-type is the channel region. The fact that the second metal oxide film is formed by the second metal oxide film increases the mobility and on-current of the transistor. This is preferable for increasing the capacitance and realizing even higher speed operation of the PLD or semiconductor device.

[0270] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0271] (Embodiment 7) In this embodiment, an imaging panel having a display function according to one embodiment of the present invention is applied to an electronic device. This will be described with reference to FIG.

[0272] The electronic device of one embodiment of the present invention includes an imaging panel having a display function of one embodiment of the present invention as a display unit. For example, the display unit can display images on the display unit. It is possible to display video information stored on an information recording medium. It is possible to display information processed by an information processing device. Alternatively, an image to be used for operation can be displayed on an operation panel or the like.

[0273] Examples of electronic devices that display video information include television sets and digital photo frames. can be cited as an example.

[0274] Examples of information processing devices include computers, digital cameras, digital video cameras, and Examples of such devices include mobile information terminals.

[0275] Other electronic devices include watches, mobile phones, portable game consoles, and large game consoles (pachinko). Examples include the operation panel of a sound player, a speaker, etc.

[0276] <Television equipment> The television device 7100 is mounted in a housing 7101 supported by a stand 7105. The television set 7100 includes a display portion 7103 (see FIG. 10A). The display portion 7103 includes an imaging panel having a display function of one embodiment, and can display images.

[0277] The remote controller 7110 can operate the television device 7100, for example. For example, the user can select video information to be displayed on the display portion 7103 or adjust the volume.

[0278] The remote controller 7110 controls the information input / output panel 7107 and the operation keys 7109. Has.

[0279] The display unit 7103 can display the broadcast received by the receiver or the video supplied from the modem. .

[0280] The television device 7100 is connected to the Internet, and information is transmitted bidirectionally (between the sender and the receiver). , or between recipients, etc.

[0281] <Information processing device> As an example of an information processing device, a computer is shown in FIG. 7201, housing 7202, display unit 7203, keyboard 7204, external connection port 720 5, a pointing device 7206, etc. In addition, the computer is The display unit 7203 includes an imaging panel having a display function similar to that of the imaging panel 7201. You can display images and enter information.

[0282] <Amusement machines> An example of a portable gaming machine is shown in FIG. 10C. The illustrated portable gaming machine includes a housing 7301 and a The device is made up of two housings, a housing 7302 connected by a connecting portion 7303 so as to be openable and closable. The housing 7301 includes a first display unit 7304, and the housing 7302 includes a second display unit 7304. The portable game machine has a display function according to one embodiment of the present invention. The first display portion 7304 and the second display portion 7305 have an imaging panel having a display function. An image can be displayed on the imaging panel having the same and information can be input.

[0283] The portable gaming machine also includes a speaker unit 7306, a recording medium insertion unit 7307, an LED lamp 7 308, input means (operation keys 7309, connection terminals 7310, sensors 7311 (force, displacement, Position, speed, acceleration, angular velocity, rotation speed, distance, infrared light, liquid, magnetism, temperature, chemicals quality, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, It is equipped with a microphone (7312) and other functions.

[0284] The portable gaming machine reads out the program or data recorded on the recording medium and executes the first The display unit 7304 and the second display unit 7305 have a display function, and the device can be connected to other portable game machines wirelessly. It has the function of communicating and sharing information.

[0285] <Mobile phone> An example of a mobile phone is shown in FIG. 10D. A mobile phone 7400 is built in a housing 7401. In addition to the display unit 7402, operation buttons 7403, an external connection port 7404, and a speaker 7405 are also included. 405, a microphone 7406, etc. The mobile phone 7400 is an embodiment of the present invention. The display portion 7402 includes an imaging panel having a display function. You can display images and enter information.

[0286] The display portion 7402 has a proximity sensor, and information can be input by touching or approaching with a finger or the like. You can exert your power.

[0287] In addition, a detection device having a sensor for detecting tilt, such as a gyro or acceleration sensor, is provided. The orientation of the mobile phone 7400 (portrait or landscape) is determined and the screen display of the display unit 7402 is automatically adjusted. You can make it so that it switches.

[0288] The display portion 7402 can also function as a two-dimensional image sensor. A backlight that emits near-infrared light or a fingerprint of a palm that touches the display unit 7402 Personal authentication is performed using images of palm veins, finger veins, etc. captured using a sensing light source. It is possible.

[0289] <Mobile information terminal> An example of a folding type portable information terminal is shown in FIG. The device is equipped with a housing 7451L and a housing 7451R connected by a transformer 7454. The information terminal 7450 includes an operation button 7453, a left speaker 7455L, and a right speaker 7455R. In addition to the external connection port 455R, the portable information terminal 7450 has an external connection port 745 (not shown) on the side thereof. 6. The display unit 7452L is provided on the housing 7451L, and the display unit 7452R is provided on the housing 7451R. When the hinge 7454 is folded so that the display units 7452R face each other, the two The display portion of the portable information terminal 7450 can be protected by the housing. The display unit 7452L and the display unit 7452R have imaging panels with the same display function. Images can be displayed on the imaging panel, which has the functionality, and information can be input.

[0290] In addition, the mobile information terminal 7450 is equipped with a gyro, an acceleration sensor, and a GPS (Global Positioning System). It can also be equipped with a TV (TV Positioning System) receiver and video camera. For example, a detection device having a sensor for detecting tilt, such as a gyro or an acceleration sensor, may be provided. The orientation of the mobile information terminal 7450 (portrait or landscape) is determined and the orientation of the screen to be displayed is automatically adjusted. It is possible to switch to.

[0291] The portable information terminal 7450 can be connected to a network. In addition to being able to display information on the Internet, it can also remotely control other electronic devices connected to the network. It can be used as a terminal to operate.

[0292] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0293] (Embodiment 8) In this embodiment, the configuration of the imaging panel having the display function described in the third embodiment will be described. 13. In particular, in this embodiment, not only the display function but also the flexibility The imaging panel provided will be described.

[0294] FIG. 13A illustrates a structure of an input / output device that can be used in a data processing device of one embodiment of the present invention. FIG.

[0295] FIG. 13(B) is a cross-sectional view taken along the cutting lines AB and CD in FIG. 13(A).

[0296] FIG. 13(C) is a cross-sectional view taken along the cutting line EF in FIG. 13(A).

[0297] <Explanation of top view> The input / output device S00 illustrated in this embodiment includes a display unit S01 (see FIG. 13A). .

[0298] The display unit S01 includes a plurality of pixels S02 and a plurality of imaging pixels S08. It is possible to detect a finger or the like touching the display unit S01. A touch sensor can be configured using the above.

[0299] The pixel S02 includes a plurality of sub-pixels (for example, the sub-pixel S02R). The pixel circuit is capable of supplying power to drive the light emitting element.

[0300] The pixel circuit includes wiring that can supply a selection signal and wiring that can supply an image signal. The wiring is electrically connected to the wiring.

[0301] The input / output device S00 is a scanning line driving circuit that can supply a selection signal to the pixel S02. S03g(1), and an image signal line driver circuit S03g(2) capable of supplying image signals to the pixel S02. Equipped with 03s(1).

[0302] The imaging pixel S08 includes a photoelectric conversion element and an imaging pixel circuit that drives the photoelectric conversion element.

[0303] The imaging pixel circuit has wiring that can supply a control signal and a power supply potential. It is electrically connected to the wiring that can be used.

[0304] The control signal may be, for example, a pixel circuit for reading out a recorded image signal. a signal that can initialize the imaging pixel circuit; and a signal that can initialize the imaging pixel circuit. Examples of such signals include signals that can determine the time at which the signal is detected.

[0305] The input / output device S00 is an imaging pixel drive circuit that can supply control signals to the imaging pixels S08. S03g(2) and an imaging signal line drive circuit S03s(2) that reads out imaging signals.

[0306] <Explanation of the cross-sectional view> The input / output device S00 has a substrate S10 and an opposing substrate S70 opposed to the substrate S10 ( See Figure 13(B)).

[0307] The substrate S10 is a flexible substrate S10b that prevents unintended diffusion of impurities into the light emitting element. A barrier film S10a and an adhesive layer S10b are bonded to the substrate S10b and the barrier film S10a. c is a laminated body.

[0308] The opposing substrate S70 is a flexible substrate S70b, which prevents unintended diffusion of impurities into the light emitting element. a barrier film S70a for preventing the occurrence of a hazard and an adhesive layer S70b for bonding the barrier film S70a to the substrate S70b. 70c (see FIG. 13(B)).

[0309] The sealing material S60 bonds the opposing substrate S70 and the substrate S10 together. It has a refractive index higher than that of air and also serves as an optical bonding layer. The optical element S50R is located between the substrate S10 and the opposing substrate S70.

[0310] 《Pixel configuration》 The pixel S02 has subpixels S02R, S02G, and S02B (FIG. 13 (See (C)). The subpixel S02R includes a light-emitting module S80R, and the subpixel S02G The subpixel S02B includes a light-emitting module S80G, and the subpixel S02B includes a light-emitting module S80B.

[0311] For example, the subpixel S02R supplies power to the light-emitting element S50R and the light-emitting element S50R. The pixel circuit includes a transistor S02t that can achieve this (see FIG. 13(B)). The light emitting module S80R includes a light emitting element S50R and an optical element (for example, a color layer S67R). Prepare.

[0312] The light emitting element S50R has a lower electrode S51R, an upper electrode S52, a lower electrode S51R and an upper electrode S53, and a Between the layers S52, there is a layer S53 containing a light-emitting organic compound (see FIG. 13(C)).

[0313] The layer S53 containing a light-emitting organic compound includes a light-emitting unit S53a, a light-emitting unit S53b, and a light-emitting unit S53c. An intermediate layer S54 is provided between the light emitting unit S53a and the light emitting unit S53b.

[0314] The light emitting module S80R has a colored layer S67R on the counter substrate S70. Any material may be used as long as it transmits light having a wavelength, such as red, green, or blue. Alternatively, the light emitted by the light emitting element can be directly transmitted through the transparent electrode. A transparent region may be provided.

[0315] For example, the light emitting module S80R includes a sealing material in contact with the light emitting element S50R and the colored layer S67R. Has an S60.

[0316] The colored layer S67R is located so as to overlap the light-emitting element S50R. A part of the light emitted by the , and is emitted to the outside of the light emitting module S80R as shown by the arrow in the figure.

[0317] <<Display panel configuration>> The input / output device S00 has a light-shielding layer S67BM on the opposing substrate S70. , and is provided so as to surround the colored layer (for example, colored layer S67R).

[0318] The input / output device S00 includes an anti-reflection layer S67p at a position overlapping the display unit S01. The stop layer S67p may be, for example, a circular polarizer.

[0319] The input / output device S00 includes an insulating film S21. The insulating film S21 covers the transistor S02t. The insulating film S21 is used as a layer for flattening the unevenness caused by the pixel circuit. In addition, the diffusion of impurities into the transistors S02t and the like can be suppressed. An insulating film in which layers capable of forming the insulating film are stacked can be applied to the insulating film S21.

[0320] The input / output device S00 has a light-emitting element (for example, light-emitting element S50R) on an insulating film S21.

[0321] The input / output device S00 has a partition wall S28 on the insulating film S21, which overlaps the end of the lower electrode S51R. (See FIG. 13(C)). In addition, a spacer for controlling the distance between the substrate S10 and the counter substrate S70 is provided. The partition wall S28 has a partition S29 on it.

[0322] <Configuration of Image Signal Line Driving Circuit> The image signal line driver circuit S03s(1) includes a transistor S03t and a capacitor S03c. The driver circuit can be formed on the same substrate as the pixel circuit in the same process.

[0323] <Imaging pixel configuration> The imaging pixel S08 converts the light incident on the photoelectric conversion element S08p into a The imaging pixel circuit includes a transistor S08t. include.

[0324] For example, a pin-type photodiode can be used as the photoelectric conversion element S08p.

[0325] Other Configurations The input / output device S00 includes a wiring S11 that can supply a signal, and a terminal S19 is S11. It is possible to supply signals such as image signals and synchronization signals. The FPC (1) is electrically connected to the terminal S19.

[0326] A printed wiring board (PWB) may be attached to the FPC (1).

[0327] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. .

[0328] (Embodiment 9) In this embodiment, an imaging panel having not only the display function described in the eighth embodiment but also flexibility is provided. Examples of the table will be described with reference to FIGS. 14 to 17. The imaging panel with the display function can provide position information of the approaching finger, It can be used in panels.

[0329] FIG. 14 is a diagram illustrating an imaging panel having a display function. 14(A) is a diagram for explaining the arrangement of the image pickup element and the display element in the image pickup panel. FIG. 14(C) is a diagram illustrating the layout of the display section of the display panel. This is a diagram.

[0330] FIG. 15 is a diagram for explaining the display quality of an imaging panel having a display function.

[0331] 16 and 17 are diagrams illustrating the flexibility of an imaging panel equipped with a display function. 6 is a diagram illustrating how the imaging panel with a display function is folded in half. A) is a diagram illustrating the appearance of an imaging panel with a display function that can be folded into three. 17(B-1) to 17(B-3) are diagrams for explaining how to fold it in three. do.

[0332] <Flexible imaging panel with display function> The specifications of the imaging panel with display function that was fabricated are shown in Table 1, and the imaging panel The specifications of the panel are shown in Table 2.

[0333] [Table 1]

[0334] [Table 2]

[0335] The imaging panel with a display function described in this embodiment has 48 display pixels (12×4 pixels). A single imaging pixel is constructed using a sensor area in the pixel.

[0336] The imaging panel with a display function described in this embodiment detects an approaching finger and displays the image on the touch panel. For example, when a finger approaches the area where an image for operation is displayed, By doing so, location information can be provided and operations associated with that location information can be performed. Specifically, an image with a dark figure drawn on a white background is used as an image for operation. It was possible to use it.

[0337] In addition, threshold correction is possible using five transistors and one capacitor. , and a good image could be displayed.

[0338] In addition, the display can be folded and unfolded 100,000 times without any loss of display quality. I was able to return it.

[0339] Note that this embodiment mode can be appropriately combined with other embodiment modes shown in this specification. . [Explanation of symbols]

[0340] 100A imaging panel 100B imaging panel 100C imaging panel 100D imaging panel 101 Substrate 110A imaging pixel 110B imaging pixel 110C Imaging pixels 110D imaging pixels 120 Photoelectric conversion element 120B Photoelectric conversion element 120C Photoelectric conversion element 121 Photoelectric conversion element 121B Photoelectric conversion element 122 transistors 125 transistors 126 capacity 130 Detection circuit 150A Window 150B Window 150C window 150D display pixels Gate 161 162 Gate insulating film 163 Semiconductor layer 165a electrode 165b electrode 167 Protective layer 178 Opening 200 Imaging device 220 Selection circuit 221 Transistor 222 Wiring 225 amp 226 Transistor 227 Transistor 230 circuits 240 Drive Circuit 249 areas 250 Scanning line drive circuit 410 board 410a Barrier film 410b base material 421a Planarization layer 421b Planarization layer 425 Opening 426 Filler 428 Bulkhead 428h opening 429 Spacer 450 light-emitting elements 451 Lower electrode 452 Upper electrode 453 layers 467BM light shielding layer 467CF colored layer 470 Opposing substrate 480 Light Emitting Module 1100 Display Panel 1150 display pixels 7100 Television equipment 7101 Housing 7103 Display section 7105 Stand 7107 Information Input / Output Panel 7109 Operation key 7110 Remote Controller 7201 Main unit 7202 Case 7203 Display section 7204 keyboard 7205 External connection port 7206 Pointing Device 7301 Housing 7302 Housing 7303 Connection section 7304 Display section 7305 Display section 7306 Speaker section 7307 Recording medium insertion section 7308 LED Lamp 7309 Operation Key 7310 Connection terminal 7311 Sensor 7312 Microphone 7400 mobile phone 7401 Housing 7402 Display section 7403 Operation button 7404 External connection port 7405 Speaker 7406 Microphone 7450 Mobile Information Terminal 7451L housing 7451R housing 7452L Display 7452R Display section 7453 Operation button 7454 Hinge 7455L Left speaker 7455R Right Speaker 7456 External connection port Period A ANODE wiring BR wiring B period C period C1 capacity CATHODE wiring D Period DATA wiring E period F period G1 wiring G2 wiring G3 wiring M1 transistor M2 transistor M3 transistor M4 transistor M5 transistor M6 transistor PO wiring PR wiring PULL terminal READ_OUT terminal S1 terminal S2 terminal SE wiring SFGND wiring T1 period T2 period TX wiring V0 wiring V1 wiring VPI wiring VPO wiring VPR wiring S00 I / O device S01 Display section S02 Pixel S02B subpixel S02G subpixel S02R subpixel S02t transistor S03c capacity S03g(1) Scanning line driver circuit S03g(2) Imaging pixel drive circuit S03s(1) Image signal line driver circuit S03s(2) Image signal line driver circuit S03t transistor S08 Imaging pixel S08p Photoelectric conversion element S08t transistor S10 board S10a barrier film S10b board S10c adhesive layer S11 wiring S19 terminal S21 insulating film S28 Bulkhead S29 spacer S50R light emitting element S51R lower electrode S52 Upper electrode S53 Layer containing luminescent organic compound S53a Lighting Unit S53b Lighting Unit S54 middle tier S60 Encapsulant S67BM light shielding layer S67p anti-reflection layer S67R colored layer S70 opposing board S70a barrier film S70b board S70c adhesive layer S80B Light Emitting Module S80G Light Emitting Module S80R Light Emitting Module

Claims

[Claim 1] An information processing device having a flexible touch panel, The touch panel is a first substrate having flexibility; a display unit on the first substrate; a scanning line driving circuit provided on the first substrate and having an area provided along a long side of the display unit; The display unit a first adhesive layer on the first substrate; a transistor on the first adhesion layer; an insulating layer over the transistor; a lower electrode of a light-emitting element on the insulating layer; a partition wall having an area overlapping an end portion of the lower electrode; a layer including a light-emitting organic compound overlapping the lower electrode in a region where the partition wall is not provided; an upper electrode of the light-emitting element on the layer containing the light-emitting organic compound; a colored layer on the upper electrode; a second adhesive layer on the color layer; a flexible second substrate on the second adhesive layer; In a plan view, the touch panel has a first region, a second region, and a third region located between the first region and the second region and bent by a folding operation of the information processing device; The touch panel may be folded so that the first area and the second area face each other, a photodiode is provided so as not to overlap the light emitting element and so as not to overlap a channel forming region of the transistor; light emitted from the light-emitting element is emitted above the second substrate through the colored layer; The information processing device, wherein light incident from above the second substrate is incident on the photodiode without passing through the colored layer and without passing through the partition wall.

Images