Substrate processing device

Abstract

To provide a substrate processing device in which frequency of replacing a chemical liquid with a new liquid hardly increases.SOLUTION: A substrate processing apparatus 100 includes a substrate processing unit 2, a recovery pipe 202, a drain pipe 201, a switching unit 18, a storage unit 103, and a control unit 102. The switching unit 18 switches a discharge destination of a processing liquid discharged from the substrate processing unit 2 between the recovery pipe 202 and the drain pipe 201. A recipe RP designates a first discharge destination as a discharge destination of the processing liquid, and then designates a second discharge destination as the discharge destination of the processing liquid. When the first discharge destination is designated as the discharge destination of the processing liquid by the recipe RP, the control unit 102 controls the switching unit 18 so that the processing liquid is discharged from the switching unit 18 to the drain pipe 201. When a holding time HT elapses after the second discharge destination is designated as the discharge destination of the processing liquid by the recipe RP, the control unit 102 controls the switching unit so that the processing liquid is discharged from the switching unit 18 to the recovery pipe 202.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus. [Background technology]

[0002] One type of substrate processing apparatus is a single-wafer processing apparatus that processes substrates one by one. A single-wafer processing apparatus comprises a chamber, a spin chuck, a nozzle, and a cup. The spin chuck, nozzle, and cup are housed in the chamber. The spin chuck holds the substrate horizontally and rotates the horizontally oriented substrate around its center. The nozzle ejects a chemical solution onto the top surface of the rotating substrate. The cup catches the chemical solution discharged from the rotating substrate. The chemical solution caught in the cup is discharged from the chamber.

[0003] Among single-wafer type substrate processing apparatuses, there are those that recover chemicals discharged from a chamber and reuse them for substrate processing (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2021-174973 Summary of the Invention [Problem to be solved by the invention]

[0005] However, the chemical solution discharged from the chamber contains impurities. Therefore, if all of the chemical solution discharged from the chamber is collected, the purity of the chemical solution will deteriorate more quickly. As a result, the chemical solution may need to be replaced with new solution more frequently.

[0006] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus in which the frequency of replacing chemical solutions with new solutions is reduced. [Means for solving the problem]

[0007] According to one aspect of the present invention, a substrate processing apparatus includes an apparatus main body and a recovery tank. The apparatus main body includes a substrate processing section, a recovery pipe, a drainage pipe, a switching unit, a memory unit, and a control unit. The substrate processing section supplies a processing liquid to a substrate to process the substrate. The recovery pipe distributes the processing liquid discharged from the substrate processing section. The drainage pipe distributes the processing liquid discharged from the substrate processing section. The switching unit switches the destination of the processing liquid discharged from the substrate processing section between the recovery pipe and the drainage pipe. The memory unit stores a recipe and a retention time. The recipe specifies a processing procedure to be performed by the substrate processing section and a destination of the processing liquid. The control unit controls the substrate processing section with reference to the recipe and also controls the switching unit with reference to the recipe and the retention time. The recovery tank recovers the processing liquid circulating through the recovery pipe. The recipe specifies a first destination as the destination of the processing liquid and then a second destination as the destination of the processing liquid. The first discharge destination corresponds to the drain pipe. The second discharge destination corresponds to the recovery pipe. When the recipe specifies the first discharge destination as the discharge destination of the processing liquid, the control unit controls the switching unit to discharge the processing liquid from the switching unit to the drain pipe. When the retention time has elapsed since the recipe specified the second discharge destination as the discharge destination of the processing liquid, the control unit controls the switching unit to discharge the processing liquid from the switching unit to the recovery pipe.

[0008] In one embodiment, the recipe includes a first recipe and a second recipe. The first recipe and the second recipe have different supply times. The supply time indicates a time length for supplying the processing liquid to the substrate. The retention time includes a first retention time corresponding to the first recipe and a second retention time corresponding to the second recipe. When controlling the substrate processing unit with reference to the first recipe, the control unit controls the switching unit with reference to the first recipe and the first retention time. When controlling the substrate processing unit with reference to the second recipe, the control unit controls the switching unit with reference to the second recipe and the second retention time.

[0009] In one embodiment, the second recipe includes setting information, and the control unit refers to the first holding time when the recipe does not include the setting information, and the control unit refers to the second holding time when the recipe includes the setting information.

[0010] In one embodiment, the retention time indicates a time length corresponding to a recovery rate of the processing liquid, which indicates a ratio between the amount of the processing liquid supplied to the substrate by the substrate processing unit and the amount of the processing liquid recovered in the recovery tank.

[0011] In one embodiment, the collection tank is disposed below the main body of the apparatus, and the retention time indicates a time length corresponding to the positional relationship between the collection tank and the main body of the apparatus.

[0012] In one embodiment, the storage unit stores table data. The table data associates positional information indicating the positional relationship between the recovery tank and the apparatus main body, a recovery rate of the processing liquid, a supply time indicating the length of time the processing liquid is supplied to the substrate, and the retention time. The recovery rate of the processing liquid indicates the ratio between the amount of the processing liquid supplied to the substrate by the substrate processing unit and the amount of the processing liquid recovered in the recovery tank. The control unit acquires the retention time by referring to the table data.

[0013] In one embodiment, the recipe specifies the second destination as a destination for the processing liquid while the processing liquid is being supplied.

[0014] In one embodiment, the recipe specifies the second discharge destination as a discharge destination of the processing liquid when supply of the processing liquid starts.

[0015] In one embodiment, the hold time is set in the recipe.

[0016] In one embodiment, the processing liquid includes a first processing liquid and a second processing liquid. The substrate processing unit includes a substrate holding unit, a first nozzle, a second nozzle, and a liquid receiving unit. The substrate holding unit holds the substrate horizontally. The first nozzle ejects the first processing liquid toward the substrate held on the substrate holding unit. The second nozzle ejects the second processing liquid toward the substrate held on the substrate holding unit. The liquid receiving unit surrounds the substrate held on the substrate holding unit and receives the first processing liquid and the second processing liquid discharged from the substrate. The substrate processing unit further includes a first discharge pipe and a second discharge pipe. The first discharge pipe discharges the first processing liquid from the liquid receiving unit. The second discharge pipe discharges the second processing liquid from the liquid receiving unit. The first discharge pipe distributes the first processing liquid from the liquid receiving unit to the switching unit. The recipe specifies a third discharge destination as the discharge destination of the processing liquid after a predetermined discharge time has elapsed since the first nozzle started to discharge the first processing liquid. The third discharge destination corresponds to the second discharge pipe. The memory unit further stores a standby time. The control unit controls the switching unit so that the processing liquid is discharged from the switching unit to the drain pipe when the standby time has elapsed since the recipe specified the third discharge destination as the discharge destination of the processing liquid.

[0017] In one embodiment, the wait time is set in the recipe. [Effects of the Invention]

[0018] According to the substrate processing apparatus of the present invention, the frequency of replacing the chemical solution with a new solution is reduced. [Brief explanation of the drawings]

[0019] [Figure 1] 1 is a diagram showing a substrate processing apparatus according to a first embodiment of the present invention. [Figure 2] 1 is a schematic view of a substrate processing apparatus according to a first embodiment of the present invention. [Figure 3] 1 is a cross-sectional view schematically showing the configuration of a substrate processing section included in a substrate processing apparatus according to a first embodiment of the present invention. [Figure 4] FIG. 10 is a diagram showing the substrate processing apparatus during a chemical solution discharge process. [Figure 5] FIG. 10 is a view showing the substrate processing apparatus when a rinsing liquid is being supplied to the substrate. [Figure 6] 1 is a diagram showing a part of the configuration of a substrate processing apparatus according to a first embodiment of the present invention. [Figure 7] FIG. 4 is another view showing a part of the configuration of the substrate processing apparatus according to the first embodiment of the present invention. [Figure 8] 1 is a block diagram showing a configuration of a substrate processing apparatus according to a first embodiment of the present invention. [Figure 9] 1A is a diagram showing the flow of processing based on a first recipe; FIG. 1B is a diagram showing a first example of the chemical liquid passing through the tip of the first nozzle, the used chemical liquid flowing into the switching unit, and the destination of the used chemical liquid; and FIG. 1C is a diagram showing a second example of the chemical liquid passing through the tip of the first nozzle, the used chemical liquid flowing into the switching unit, and the destination of the used chemical liquid. [Figure 10] (a) is a diagram showing the flow of processing based on the second recipe. (b) is a diagram showing a third example of the chemical liquid passing through the tip of the first nozzle, the used chemical liquid flowing into the switching unit, and the destination of the used chemical liquid. (c) is a diagram showing a fourth example of the chemical liquid passing through the tip of the first nozzle, the used chemical liquid flowing into the switching unit, and the destination of the used chemical liquid. [Figure 11](a) is a diagram showing a modified example of the process flow based on the first recipe. (b) is a diagram showing a fifth example of the chemical liquid passing through the tip of the first nozzle, the used chemical liquid flowing into the switching unit, and the destination of the used chemical liquid. (c) is a diagram showing a sixth example of the chemical liquid passing through the tip of the first nozzle, the used chemical liquid flowing into the switching unit, and the destination of the used chemical liquid. [Figure 12] 10A is a diagram showing a process flow based on the first recipe, and FIG. 10B is a diagram showing a seventh example of the chemical passing through the tip of the first nozzle, the used chemical flowing into the switching unit, and the destination of the used chemical. [Figure 13] FIG. 10 is a block diagram showing the configuration of a substrate processing apparatus according to a second embodiment of the present invention. [Figure 14] FIG. 10 is a diagram illustrating an example of table data. DETAILED DESCRIPTION OF THE INVENTION

[0020] Hereinafter, embodiments of the substrate processing apparatus of the present invention will be described with reference to the drawings (FIGS. 1 to 14). However, the present invention is not limited to the following embodiments, and can be implemented in various forms without departing from the spirit of the present invention. Note that duplicated explanations may be omitted as appropriate. In addition, the same or equivalent parts in the drawings will be designated by the same reference numerals, and explanations will not be repeated.

[0021] In the substrate processing apparatus according to the present invention, the "substrate" to be processed can be a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display, a glass substrate for a plasma display, a substrate for an FED (Field Emission Display), a substrate for an optical disk, a substrate for a magnetic disk, or a substrate for a magneto-optical disk. The following description of an embodiment of the present invention will be primarily focused on a case where a disk-shaped semiconductor wafer is the substrate to be processed. However, the substrate processing apparatus according to the present invention can be similarly applied to various substrates other than the semiconductor wafers described above. Furthermore, the shape of the substrate is not limited to a disk shape, and the substrate processing apparatus according to the present invention can be applied to substrates of various shapes.

[0022] [Embodiment 1] First, a substrate processing apparatus 100 according to this embodiment will be described with reference to Fig. 1. Fig. 1 is a diagram showing the substrate processing apparatus 100 according to this embodiment. Fig. 1 shows three substrate processing apparatuses 100. The three substrate processing apparatuses 100 include a first substrate processing apparatus 100A, a second substrate processing apparatus 100B, and a third substrate processing apparatus 100C.

[0023] As shown in FIG. 1, the substrate processing apparatus 100 includes an apparatus main body 11, a fluid cabinet 12, a circulation line 13, and a recovery line 14. The apparatus main body 11 is installed in a clean room CF. The fluid cabinet 12 is installed in a utility room SF. The utility room SF is located on the floor below the clean room CF. The clean room CF and the utility room SF are separated by the floor GR of the clean room CF. Therefore, the fluid cabinet 12 is located below the apparatus main body 11. The floor GR of the clean room CF is, for example, grating-shaped.

[0024] The fluid cabinet 12 contains a processing liquid. The circulation line 13 circulates the processing liquid between the apparatus main body 11 and the fluid cabinet 12. The apparatus main body 11 processes the substrate W using the processing liquid supplied from the circulation line 13. The recovery line 14 returns the processing liquid, which has been used to process the substrate W in the apparatus main body 11, to the fluid cabinet 12. Hereinafter, the processing liquid, which has been used to process the substrate W in the apparatus main body 11, may be referred to as the "used processing liquid." As will be described later with reference to FIG. 7, the fluid cabinet 12 has a recovery tank 401. Therefore, the recovery tank 401 is located below the apparatus main body 11.

[0025] The recovery line 14 returns the used treatment liquid to the fluid cabinet 12, whereby the used treatment liquid is recovered in the fluid cabinet 12. The fluid cabinet 12 circulates the used treatment liquid to the circulation line 13. As a result, the used treatment liquid is reused. In this embodiment, the recovery line 14 returns a portion of the used treatment liquid to the fluid cabinet 12.

[0026] When multiple apparatus main bodies 11 are installed in the clean room CF, multiple fluid cabinets 12 are also installed in the utility room SF. The positional relationship between each apparatus main body 11 and each corresponding fluid cabinet 12 is not uniquely determined due to the conditions of the utility room SF, such as other apparatuses installed in the utility room SF and the layout of the utility room SF. As a result, the positional relationship between the apparatus main body 11 and the fluid cabinets 12 may differ for each substrate processing apparatus 100.

[0027] 1, the main body 11A of the first substrate processing apparatus 100A is disposed away from the fluid cabinet 12A of the first substrate processing apparatus 100A. Similarly, the main body 11C of the third substrate processing apparatus 100C is disposed away from the fluid cabinet 12C of the third substrate processing apparatus 100C. In contrast, the fluid cabinet 12B of the second substrate processing apparatus 100B is disposed directly below the main body 11B of the second substrate processing apparatus 100B. As a result, used processing liquid flows more efficiently through the recovery line 14B of the second substrate processing apparatus 100B compared to the recovery lines 14A and 14C of the first and third substrate processing apparatuses 100A and 100C.

[0028] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 2. Fig. 2 is a schematic diagram of the substrate processing apparatus 100 of this embodiment. More specifically, Fig. 2 is a schematic plan view of the substrate processing apparatus 100 of this embodiment. However, for ease of understanding, Fig. 2 also shows the fluid cabinet 12 located on the floor below the clean room CF together with the apparatus main body 11.

[0029] The substrate processing apparatus 100 processes the substrates W by supplying a processing liquid to the substrates W. More specifically, the substrate processing apparatus 100 is a single-wafer processing apparatus, and processes the substrates W one by one.

[0030] As shown in FIG. 2, the substrate processing apparatus 100 further includes a plurality of substrate processing units 2, a plurality of fluid boxes 15, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a controller 101.

[0031] A cassette CA is placed on each load port LP. The cassette CA accommodates one or more stacked substrates W. The cassette CA may be, for example, a FOUP (Front Opening Unified Pod), a SMIF (Standard Mechanical Interface) pod, or an OC (Open Cassette).

[0032] The indexer robot IR transports substrates W between the cassette CA and the center robot CR. The center robot CR transports substrates W between the indexer robot IR and the substrate processing unit 2. Note that a placement stage (path) on which the substrate W is temporarily placed may be provided between the indexer robot IR and the center robot CR, and the device may be configured so that the substrate W is transferred indirectly between the indexer robot IR and the center robot CR via the placement stage.

[0033] The multiple substrate processing units 2 form multiple towers TW. The multiple towers TW are arranged to surround the center robot CR in a plan view. Each tower TW includes multiple substrate processing units 2 stacked one on top of the other. In this embodiment, the multiple substrate processing units 2 form four towers TW. The four towers TW include a first tower TW1, a second tower TW2, a third tower TW3, and a fourth tower TW4. Each tower TW includes three substrate processing units 2.

[0034] Each of the fluid boxes 15 corresponds to one of the multiple towers TW. In this embodiment, the substrate processing apparatus 100 includes four fluid boxes 15. The four fluid boxes 15 include a first fluid box 151, a second fluid box 152, a third fluid box 153, and a fourth fluid box 154.

[0035] As already described, the fluid cabinet 12 contains a processing liquid. The processing liquid in the fluid cabinet 12 is supplied to all of the substrate processing units 2 included in the corresponding tower TW via one of the fluid boxes 15. Each of the substrate processing units 2 supplies the processing liquid to the upper surface of the substrate W to process the substrate W.

[0036] In this embodiment, the substrate processing apparatus 100 includes two fluid cabinets 12. The two fluid cabinets 12 include a first fluid cabinet 121 and a second fluid cabinet 122. Both the first fluid cabinet 121 and the second fluid cabinet 122 are disposed in the utility chamber SF described with reference to FIG.

[0037] The first fluid cabinet 121 contains processing liquid to be supplied to each of the substrate processing units 2 that form the first tower TW1 and the second tower TW2. The second fluid cabinet 122 contains processing liquid to be supplied to each of the substrate processing units 2 that form the third tower TW3 and the fourth tower TW4.

[0038] Specifically, the circulation line 13 described with reference to FIG. 1 includes a first circulation line 131, a second circulation line 132, a third circulation line 133, and a fourth circulation line .

[0039] The first circulation line 131 circulates the processing liquid between the first fluid cabinet 121 and the first fluid box 151. As a result, the processing liquid is supplied from the first circulation line 131 to each substrate processing unit 2 forming the first tower TW1.

[0040] The second circulation line 132 circulates the processing liquid between the first fluid cabinet 121 and the second fluid box 152. As a result, the processing liquid is supplied from the second circulation line 132 to each substrate processing unit 2 forming the second tower TW2.

[0041] The third circulation line 133 circulates the processing liquid between the second fluid cabinet 122 and the third fluid box 153. As a result, the processing liquid is supplied from the third circulation line 133 to each substrate processing unit 2 forming the third tower TW3.

[0042] The fourth circulation line 134 circulates the processing liquid between the second fluid cabinet 122 and the fourth fluid box 154. As a result, the processing liquid is supplied from the fourth circulation line 134 to each substrate processing unit 2 forming the fourth tower TW4.

[0043] Moreover, the recovery line 14 described with reference to FIG. 1 includes a first recovery line 141, a second recovery line 142, a third recovery line 143, and a fourth recovery line 144.

[0044] The first recovery line 141 returns used processing liquid discharged from each substrate processing unit 2 constituting the first tower TW1 to the first fluid cabinet 121. Specifically, the first recovery line 141 returns a portion of each used processing liquid discharged from each substrate processing unit 2 constituting the first tower TW1 to the first fluid cabinet 121. Similarly, the second recovery line 142 returns a portion of each used processing liquid discharged from each substrate processing unit 2 constituting the second tower TW2 to the first fluid cabinet 121. The third recovery line 143 returns a portion of each used processing liquid discharged from each substrate processing unit 2 constituting the third tower TW3 to the second fluid cabinet 122. The fourth recovery line 144 returns a portion of each used processing liquid discharged from each substrate processing unit 2 constituting the fourth tower TW4 to the second fluid cabinet 122.

[0045] More specifically, the processing liquid in the fluid cabinet 12 includes a chemical liquid. Each of the substrate processing units 2 processes the substrate W by supplying the chemical liquid to the upper surface of the substrate W. More specifically, as will be described with reference to FIG. 3, each of the substrate processing units 2 processes the substrate W by supplying the chemical liquid and a rinse liquid to the upper surface of the substrate W. The recovery line 14 returns a portion of the used chemical liquid discharged from the substrate processing unit 2 to the fluid cabinet 12. The chemical liquid is an example of a "first processing liquid." The rinse liquid is an example of a "second processing liquid."

[0046] The chemical liquid is not particularly limited. The chemical liquid may be, for example, hydrofluoric acid (HF). The rinse liquid is, for example, pure water. The pure water may be deionized water (DIW). More specifically, the rinse liquid may be ultrapure water. The rinse liquid is not limited to pure water. The rinse liquid may be, for example, carbonated water, electrolytic ionized water, hydrogen water, ozone water, ammonia water, or hydrochloric acid water with a diluted concentration (for example, about 0.001% by weight to about 0.01% by weight).

[0047] The control device 101 controls the operation of each part of the substrate processing apparatus 100. For example, the control device 101 controls each part of the load port LP, the indexer robot IR, the center robot CR, the fluid cabinet 12, the fluid box 15, and the substrate processing unit 2. The control device 101 includes a control unit 102 and a memory unit 103.

[0048] The control unit 102 controls the operation of each unit of the substrate processing apparatus 100 based on various information stored in the storage unit 103. The control unit 102 has, for example, a processor. The control unit 102 may have a CPU (Central Processing Unit) or an MPU (Micro Processing Unit) as the processor. Alternatively, the control unit 102 may have a general-purpose computing device or a dedicated computing device.

[0049] The storage unit 103 stores various information for controlling the operation of the substrate processing apparatus 100. For example, the storage unit 103 stores data and computer programs. The data includes a recipe RP. The recipe RP includes, for example, a process recipe. The process recipe is data that specifies the procedure for substrate processing. Specifically, the process recipe specifies the execution order of a series of processes included in the substrate processing, the content of each process, and the conditions (parameter setting values) for each process.

[0050] The storage unit 103 includes a main storage device. The main storage device includes, for example, a semiconductor memory. The storage unit 103 may further include an auxiliary storage device. The auxiliary storage device includes, for example, at least one of a semiconductor memory and a hard disk drive. The storage unit 103 may also include removable media.

[0051] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 3. Figure 3 is a cross-sectional view schematically showing the configuration of the substrate processing unit 2 included in the substrate processing apparatus 100 of this embodiment. More specifically, Figure 3 shows the substrate processing unit 2 when a chemical liquid is supplied to a substrate W to process the substrate W.

[0052] 3, the substrate processing unit 2 includes a processing chamber 2a, a substrate holding unit 3, a substrate rotating unit 4, a first nozzle 5a, a second nozzle 5b, a first nozzle moving unit 6a, a second nozzle moving unit 6b, a liquid receiving unit 7, and a liquid receiving moving unit 8. The substrate processing apparatus 100 further includes a first liquid supply line 16a and a second liquid supply line 16b.

[0053] The processing chamber 2a has a generally box-like shape. The processing chamber 2a accommodates the substrate W, the substrate holder 3, the substrate rotation unit 4, the first nozzle 5a, the second nozzle 5b, the first nozzle movement unit 6a, the second nozzle movement unit 6b, the liquid receiver 7, the liquid receiver movement unit 8, a portion of the first liquid supply line 16a, and a portion of the second liquid supply line 16b. The substrate W is loaded into the processing chamber 2a and processed in the processing chamber 2a. In other words, the substrate processing is performed in the processing chamber 2a. The processing chamber 2a is, for example, a chamber.

[0054] The substrate holder 3 holds the substrate W horizontally in the processing chamber 2a. The substrate holder 3 is controlled by the controller 102. More specifically, the substrate holder 3 may include a plurality of chuck members 31 and a spin base 32.

[0055] The spin base 32 is substantially disk-shaped and supports a plurality of chuck members 31 in a horizontal position. The plurality of chuck members 31 are arranged on the periphery of the spin base 32. The plurality of chuck members 31 clamp the periphery of the substrate W. The plurality of chuck members 31 hold the substrate W in a horizontal position. The operation of the plurality of chuck members 31 is controlled by the control unit 102.

[0056] The substrate rotator 4 rotates the substrate W integrally with the substrate holder 3. Specifically, the substrate rotator 4 rotates the substrate holder 3, which holds the substrate W, about a first rotation axis AX1 that extends vertically. The substrate rotator 4 is controlled by the controller 102. More specifically, the first rotation axis AX1 passes through the center of the spin base 32. The multiple chuck members 31 are arranged so that the center of the substrate W faces the center of the spin base 32. Therefore, the substrate W rotates about the center of the substrate W as the center of rotation.

[0057] Specifically, the substrate rotation unit 4 may have a drive unit 41 and a shaft 42. The shaft 42 is coupled to the center of the spin base 32 and extends downward from the spin base 32. The drive unit 41 generates a drive force that rotates the substrate W integrally with the substrate holder 3. More specifically, the drive unit 41 rotates the shaft 42 about a first rotation axis AX1. As a result, the spin base 32 rotates. The drive unit 41 is controlled by the control unit 102. The drive unit 41 includes, for example, an electric motor.

[0058] The first nozzle 5a ejects the chemical liquid toward the upper surface of the substrate W held by the substrate holder 3. As a result, the chemical liquid is supplied from the first nozzle 5a to the upper surface of the substrate W. More specifically, the first nozzle 5a ejects the chemical liquid toward the upper surface of the substrate W while it is rotating. As a result, a liquid film of the chemical liquid is formed on the upper surface of the substrate W.

[0059] The second nozzle 5b ejects the rinse liquid toward the upper surface of the substrate W held by the substrate holder 3. As a result, the rinse liquid is supplied from the second nozzle 5b to the upper surface of the substrate W. More specifically, the second nozzle 5b ejects the rinse liquid toward the upper surface of the rotating substrate W. As a result, a liquid film of the rinse liquid is formed on the upper surface of the substrate W.

[0060] The ejection of the chemical liquid from the first nozzle 5a is controlled by the control unit 102. Specifically, the control unit 102 controls the ejection of the chemical liquid by controlling the first liquid supply line 16a.

[0061] The first liquid supply line 16a supplies the chemical liquid to the first nozzle 5a. As a result, the chemical liquid is discharged from the first nozzle 5a. Specifically, the first liquid supply line 16a has a chemical liquid supply pipe 161a and a chemical liquid on-off valve 162a. A portion of the chemical liquid supply pipe 161a is housed within the processing chamber 2a. The remaining portion of the chemical liquid supply pipe 161a and the chemical liquid on-off valve 162a are housed in the fluid box 15 described with reference to FIG. 2.

[0062] The chemical liquid supply pipe 161a is a tubular member through which the processing liquid flows. Specifically, the chemical liquid supply pipe 161a flows to the first nozzle 5a. As a result, the chemical liquid is supplied to the first nozzle 5a and is ejected from the first nozzle 5a.

[0063] The chemical solution on-off valve 162a is provided in the chemical solution supply pipe 161a and controls the start and stop of flow of the chemical solution through the chemical solution supply pipe 161a.

[0064] Specifically, the chemical solution on-off valve 162a can be opened and closed. When the chemical solution on-off valve 162a is in an open state, the chemical solution flows through the chemical solution supply pipe 161a and is supplied to the first nozzle 5a. When the chemical solution supply pipe 161a is in a closed state, the flow of the chemical solution through the chemical solution supply pipe 161a stops, and the supply of the chemical solution to the first nozzle 5a stops. As a result, the discharge of the chemical solution from the first nozzle 5a stops.

[0065] The opening and closing operation of the chemical solution on-off valve 162a is controlled by the control unit 102. The actuator of the chemical solution on-off valve 162a is, for example, a pneumatic actuator or an electric actuator.

[0066] The control unit 102 opens the chemical solution on-off valve 162a when discharging the chemical solution from the first nozzle 5a. The control unit 102 closes the chemical solution on-off valve 162a when stopping the discharge of the chemical solution from the first nozzle 5a.

[0067] The discharge of the rinse liquid from the second nozzle 5b is controlled by the control unit 102. Specifically, the control unit 102 controls the discharge of the rinse liquid by controlling the second liquid supply line 16b.

[0068] The second liquid supply line 16b supplies the rinse liquid to the second nozzle 5b. As a result, the rinse liquid is discharged from the second nozzle 5b. Specifically, the second liquid supply line 16b, like the first liquid supply line 16a, has a rinse liquid supply pipe 161b and a rinse liquid on-off valve 162b. A portion of the rinse liquid supply pipe 161b is housed in the processing chamber 2a. The remaining portion of the rinse liquid supply pipe 161b and the rinse liquid on-off valve 162b are housed in the fluid box 15 described with reference to FIG. 2. The configuration of the second liquid supply line 16b is substantially the same as the configuration of the first liquid supply line 16a, and therefore a description thereof will be omitted. The rinse liquid may be supplied to the rinse liquid supply pipe 161b from a factory where the substrate processing apparatus 100 is installed.

[0069] The first nozzle moving unit 6a moves the first nozzle 5a in the vertical and horizontal directions. The first nozzle moving unit 6a is controlled by the control unit 102. More specifically, the first nozzle moving unit 6a moves the first nozzle 5a between a first standby position and a processing position. The first standby position is a position outside the liquid receiving unit 7. The processing position is a position facing the upper surface of the substrate W held by the substrate holding unit 3. In this embodiment, the processing position is a position facing the center of the substrate W. As shown in FIG. 3, when processing the substrate W with a chemical liquid, the first nozzle moving unit 6a moves the first nozzle 5a to a position facing the center of the substrate W (processing position). As a result, the chemical liquid is ejected from the first nozzle 5a toward the center of the substrate W.

[0070] Specifically, the first nozzle moving section 6a may have a first nozzle arm 61a, a first nozzle base 62a, and a first nozzle moving mechanism 63a.

[0071] The first nozzle base 62a extends vertically. The first nozzle arm 61a is connected to the first nozzle base 62a. The first nozzle arm 61a extends horizontally from the first nozzle base 62a. The first nozzle arm 61a supports the first nozzle 5a. For example, the first nozzle 5a is fixed to the tip of the first nozzle arm 61a and protrudes downward from the tip of the first nozzle arm 61a.

[0072] The first nozzle moving mechanism 63a moves the first nozzle arm 61a in the vertical and horizontal directions. As a result, the first nozzle 5a moves in the vertical and horizontal directions. The first nozzle moving mechanism 63a is controlled by the control unit 102.

[0073] Specifically, the first nozzle movement mechanism 63a has a rotation mechanism and an elevation mechanism. The rotation mechanism rotates the first nozzle base 62a in both forward and reverse directions about a second rotation axis AX2 extending vertically. As a result, the first nozzle 5a moves along a horizontal plane. The elevation mechanism raises and lowers the first nozzle base 62a in the vertical direction. As a result, the first nozzle 5a moves vertically. The actuator of the rotation mechanism may have, for example, a servo motor such as a stepping motor and a reducer. The actuator of the elevation mechanism may have, for example, a ball screw and an electric motor that can rotate forward and backward.

[0074] The second nozzle moving unit 6b moves the second nozzle 5b in the vertical and horizontal directions. The second nozzle moving unit 6b is controlled by the control unit 102. More specifically, the second nozzle moving unit 6b moves the second nozzle 5b between a second standby position and a processing position. The second standby position is a position outside the liquid receiving unit 7 that is different from the first standby position.

[0075] Specifically, the second nozzle moving unit 6b may have a second nozzle arm 61b, a second nozzle base 62b, and a second nozzle moving mechanism 63b, similar to the first nozzle moving unit 6a. The second nozzle moving mechanism 63b has a rotation mechanism and an elevation mechanism, similar to the first nozzle moving mechanism 63a. The rotation mechanism of the second nozzle moving mechanism 63b rotates the second nozzle base 62b in both forward and reverse directions about a third rotation axis AX3 extending vertically. The second nozzle moving mechanism 63b is controlled by the control unit 102. The configuration of the second nozzle moving unit 6b is substantially the same as the configuration of the first nozzle moving unit 6a, and therefore a detailed description thereof will be omitted.

[0076] The liquid receiving portion 7 surrounds the substrate W held by the substrate holding portion 3, and receives the chemical liquid and rinse liquid discharged from the substrate W. Specifically, the liquid receiving portion 7 may have a first guard portion 71a, a second guard portion 71b, a first cup portion 72a, and a second cup portion 72b.

[0077] The liquid receiver moving unit 8 moves the first guard part 71a and the second guard part 71b so that the chemical liquid discharged from the substrate W is received by the first guard part 71a and the rinse liquid discharged from the substrate W is received by the second guard part 71b. The liquid receiver moving unit 8 is controlled by the control unit 102. Specifically, the liquid receiver moving unit 8 may have a first elevating unit 81 and a second elevating unit 82.

[0078] The first lifting unit 81 raises and lowers the first guard unit 71a between a first upper position and a first lower position. When the first guard unit 71a is located at the first upper position, the upper end of the first guard unit 71a is located above the substrate W held by the substrate holding unit 3. When the first guard unit 71a is located at the first lower position, the upper end of the first guard unit 71a is located below the substrate W held by the substrate holding unit 3. Figure 3 shows the first guard unit 71a located at the first upper position.

[0079] Similarly, the second lifting unit 82 raises and lowers the second guard unit 71b between the second upper position and the second lower position. When the second guard unit 71b is located at the second upper position, the upper end of the second guard unit 71b is located above the substrate W held by the substrate holding unit 3. When the second guard unit 71b is located at the second lower position, the upper end of the second guard unit 71b is located below the substrate W held by the substrate holding unit 3. Figure 3 shows the second guard unit 71b located at the second upper position.

[0080] The first lifting / lowering unit 81 and the second lifting / lowering unit 82 are controlled by the control unit 102. The first lifting / lowering unit 81 and the second lifting / lowering unit 82 may have, for example, a ball screw and an electric motor that can rotate forward and backward.

[0081] The first guard part 71a has a substantially cylindrical shape. When the first guard part 71a is located at the first upper position, the first guard part 71a surrounds the substrate W held by the substrate holder 3 and receives the processing liquid discharged from the substrate W. In this embodiment, the first guard part 71a receives the chemical liquid discharged from the substrate W.

[0082] The first cup portion 72a is an annular member arranged around the substrate rotation portion 4. The first cup portion 72a has an annular groove with an open upper surface. The lower end of the annular shape of the first guard portion 71a is located inside the annular groove of the first cup portion 72a. As a result, the chemical liquid received by the first guard portion 71a is collected in the groove of the first cup portion 72a. The chemical liquid collected in the first cup portion 72a is used chemical liquid.

[0083] The second guard part 71b is a substantially cylindrical member disposed around (outside) the first guard part 71a. When the second guard part 71b is located at the second upper position and the first guard part 71a is located at the first lower position, the second guard part 71b surrounds the substrate W held by the substrate holder 3 and receives the processing liquid discharged from the substrate W. In this embodiment, the second guard part 71b receives the rinse liquid discharged from the substrate W.

[0084] The second cup portion 72b is annular and is disposed around (outside of) the first guard portion 71a. The second cup portion 72b has an annular groove with an open upper surface. The lower end of the annular shape of the second guard portion 71b is located inside the annular groove of the second cup portion 72b. As a result, the rinse liquid received by the second guard portion 71b is collected in the groove of the second cup portion 72b. The rinse liquid collected in the second cup portion 72b is used rinse liquid.

[0085] Next, the substrate processing apparatus 100 of this embodiment will be further described with reference to Fig. 3. As shown in Fig. 3, the substrate processing apparatus 100 further includes a first discharge pipe 17a, a second discharge pipe 17b, a switching unit 18, a first waste liquid tank 19a, a second waste liquid tank 19b, and a drainage pipe 201. The recovery line 14 also includes a recovery pipe 202. The first waste liquid tank 19a and the second waste liquid tank 19b are provided for each tower TW. The switching unit 18 is provided for each substrate processing unit 2.

[0086] The first discharge pipe 17a is a tubular member through which the processing liquid flows. The first discharge pipe 17a discharges the used chemical liquid from the liquid receiving section 7. Specifically, one end of the first discharge pipe 17a is connected to the bottom of the first cup section 72a. The first discharge pipe 17a extends from the inside to the outside of the processing chamber 2a. The used chemical liquid collected in the first cup section 72a flows into the first discharge pipe 17a. The first discharge pipe 17a guides the used chemical liquid collected in the first cup section 72a to the outside of the processing chamber 2a (substrate processing section 2). As a result, the used chemical liquid is discharged from the liquid receiving section 7 to the outside of the processing chamber 2a (substrate processing section 2). Specifically, the first discharge pipe 17a distributes the used chemical liquid from the liquid receiving section 7 (first cup section 72a) to the switching section 18.

[0087] The second discharge pipe 17b is a tubular member through which the processing liquid flows. The second discharge pipe 17b discharges used rinse liquid from the liquid receiving section 7. Specifically, one end of the second discharge pipe 17b is connected to the bottom of the second cup section 72b. The second discharge pipe 17b extends from the inside to the outside of the processing chamber 2a. The used rinse liquid collected in the second cup section 72b flows into the second discharge pipe 17b. The second discharge pipe 17b guides the used rinse liquid collected in the second cup section 72b to the outside of the processing chamber 2a (substrate processing section 2). As a result, the used chemical liquid is discharged from the liquid receiving section 7 to the outside of the processing chamber 2a (substrate processing section 2).

[0088] Specifically, the second discharge pipe 17b allows the used rinse liquid to flow from the liquid receiving section 7 (second cup section 72b) to the second drainage tank 19b. As a result, the rinse liquid discharged from the substrate processing section 2 (liquid receiving section 7) via the second discharge pipe 17b is stored in the second drainage tank 19b.

[0089] The switching unit 18 switches the destination of the processing liquid discharged from the substrate processing unit 2 between the recovery pipe 202 and the drainage pipe 201. In this embodiment, the switching unit 18 switches the destination of the chemical liquid discharged from the liquid receiving unit 7 (first cup portion 72a) between the recovery pipe 202 and the drainage pipe 201.

[0090] Specifically, the switching unit 18 has one inlet and multiple outlets. The other end of the first discharge pipe 17a is connected to the inlet of the switching unit 18. One end of a recovery pipe 202 is connected to one of the multiple outlets of the switching unit 18. One end of a drain pipe 201 is connected to the other of the multiple outlets of the switching unit 18. The switching operation of the switching unit 18 to switch the discharge destination is controlled by the control unit 102. That is, the control unit 102 controls the switching unit 18 to switch the discharge destination of the chemical liquid (processing liquid) discharged from the substrate processing unit 2 between the recovery pipe 202 and the drain pipe 201. The switching unit 18 includes, for example, a switching valve.

[0091] The drainage pipe 201 is a tubular member through which the processing liquid flows. When the control unit 102 controls the switching unit 18 so that the chemical liquid (processing liquid) is discharged from the switching unit 18 to the drainage pipe 201, the chemical liquid (processing liquid) discharged from the substrate processing unit 2 via the first discharge pipe 17a flows into the drainage pipe 201 via the switching unit 18. As a result, the chemical liquid (processing liquid) discharged from the substrate processing unit 2 flows through the drainage pipe 201.

[0092] The other end of the drainage pipe 201 is connected to the first drainage tank 19a. Therefore, when the control unit 102 controls the switching unit 18 so that the chemical liquid (processing liquid) is discharged from the switching unit 18 to the drainage pipe 201, the chemical liquid (processing liquid) discharged from the substrate processing unit 2 (liquid receiving unit 7) via the first discharge pipe 17a is stored in the first drainage tank 19a.

[0093] The recovery pipe 202 is a tubular member through which the processing liquid flows. When the control unit 102 controls the switching unit 18 so that the chemical liquid (processing liquid) is discharged from the switching unit 18 to the recovery pipe 202, the chemical liquid (processing liquid) discharged from the substrate processing unit 2 via the first discharge pipe 17a flows into the recovery pipe 202 via the switching unit 18. As a result, the chemical liquid (processing liquid) discharged from the substrate processing unit 2 flows through the recovery pipe 202.

[0094] The other end of recovery pipe 202 is connected to recovery tank 401, which will be described later with reference to Fig. 7. Therefore, when control unit 102 controls switching unit 18 so that the chemical liquid (processing liquid) is discharged from switching unit 18 to recovery pipe 202, the chemical liquid (processing liquid) discharged from substrate processing unit 2 (liquid receiving unit 7) via first discharge pipe 17a is stored in recovery tank 401 (Fig. 7).

[0095] Next, the operation of the substrate processing apparatus 100 of this embodiment will be described with reference to FIGS.

[0096] When the substrate W is treated by supplying a chemical solution to the substrate W, the control unit 102 executes a guard movement process, a substrate rotation process, a nozzle movement process, and a chemical solution discharge process.

[0097] Specifically, as shown in FIG. 3, the control unit 102 controls the liquid receiver moving unit 8 to move the first guard unit 71a and the second guard unit 71b to the first upper position and the second upper position, respectively (guard moving process). The control unit 102 also controls the substrate rotator 4 to rotate the substrate W (substrate rotation process). The control unit 102 also controls the first nozzle moving unit 6a to move the first nozzle 5a from the first standby position to the processing position (position facing the center of the substrate W) (nozzle moving process). Thereafter, the control unit 102 controls the first liquid supply line 16a to discharge the chemical liquid from the first nozzle 5a toward the upper surface of the rotating substrate W (chemical liquid discharging process). As a result, a liquid film of the chemical liquid is formed on the upper surface of the substrate W, and the substrate W is processed.

[0098] The used chemical liquid discharged from the rotating substrate W is received by the first guard portion 71a and collected in the first cup portion 72a. The used chemical liquid collected in the first cup portion 72a is discharged to the first discharge pipe 17a.

[0099] 3, when the first nozzle 5a starts discharging the chemical liquid (when the chemical liquid discharge process starts), the control unit 102 controls the discharge destination of the used chemical liquid to the drainage pipe 201. Therefore, the used chemical liquid discharged from the substrate processing unit 2 is discharged into the first drainage tank 19a.

[0100] 4 is a diagram showing the substrate processing apparatus 100 in the middle of a chemical liquid discharge process (during which the first nozzle 5a is discharging the chemical liquid). As shown in FIG. 4, the control unit 102 controls the switching unit 18 in the middle of the chemical liquid discharge process to switch the discharge destination of the used chemical liquid from the drainage pipe 201 to the recovery pipe 202. As a result, the chemical liquid starts to flow into the recovery pipe 202 in the middle of the chemical liquid discharge process. Therefore, the used chemical liquid is partially recovered.

[0101] Fig. 5 is a view showing the substrate processing apparatus 100 when a rinsing liquid is being supplied to the substrate W. Fig. 5 shows the first guard part 71a located at the first lower position.

[0102] 5, when a predetermined time has elapsed since the start of the chemical liquid discharge process (discharge of the chemical liquid by the first nozzle 5a), the control unit 102 controls the first liquid supply line 16a to stop the discharge of the chemical liquid by the first nozzle 5a. Thereafter, the control unit 102 executes a guard switching process, a nozzle switching process, and a rinse liquid discharge process.

[0103] Specifically, the control unit 102 controls the liquid receiver moving unit 8 to move the first guard unit 71a from the first upper position to the first lower position (guard switching process). The control unit 102 also controls the first nozzle moving unit 6a to move the first nozzle 5a from the processing position to the first standby position, and controls the second nozzle moving unit 6b to move the second nozzle 5b from the second standby position to the processing position (nozzle switching process). Thereafter, the control unit 102 controls the second liquid supply line 16b to discharge the rinsing liquid from the second nozzle 5b toward the upper surface of the rotating substrate W. As a result, the chemical liquid is discharged from the upper surface of the substrate W, and a liquid film of the rinsing liquid is formed on the upper surface of the substrate W.

[0104] The used rinse liquid discharged from the rotating substrate W is received by the second guard portion 71b and collected in the second cup portion 72b. The used rinse liquid collected in the second cup portion 72b is discharged to the second discharge pipe 17b. As a result, the used rinse liquid is stored in the second drainage tank 19b.

[0105] After the discharge of the rinse liquid starts, the used chemical liquid remaining in the first cup portion 72a or the first discharge pipe 17a flows into the switching unit 18. Therefore, after the discharge of the rinse liquid starts, the remaining chemical liquid flows from the switching unit 18 into the recovery pipe 202.

[0106] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 6. Fig. 6 is a diagram showing a part of the configuration of the substrate processing apparatus 100 of this embodiment. In detail, Fig. 6 shows one fluid box 15 and one corresponding tower TW.

[0107] 6, the circulation line 13 has a circulation pipe 302. A portion of the circulation pipe 302 is housed in the fluid box 15. The circulation pipe 302 is a tubular member through which the processing liquid flows, and circulates the chemical liquid.

[0108] The other end of each chemical supply pipe 161a that supplies chemical to each substrate processing unit 2 that constitutes one tower TW is connected to a circulation pipe 302. As a result, the chemical circulating through one circulation pipe 302 is supplied to each substrate processing unit 2 that constitutes one tower TW.

[0109] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 7. Fig. 7 is another view showing a part of the configuration of the substrate processing apparatus 100 of this embodiment. As shown in Fig. 7, the circulation line 13 includes a first circulation pipe 302a, a second circulation pipe 302b, a first circulation pump 303a, a second circulation pump 303b, a first circulation heater 304a, a second circulation heater 304b, a first circulation filter 305a, and a second circulation filter 305b. The substrate processing apparatus 100 further includes a supply tank 301.

[0110] The supply tank 301 is housed in the fluid cabinet 12. The supply tank 301 stores a chemical solution. As described with reference to FIG. 2, in this embodiment, the chemical solution is supplied from one fluid cabinet 12 to two towers TW. Therefore, one end of two circulation pipes 302 (a first circulation pipe 302a and a second circulation pipe 302b) is connected to one supply tank 301. Specifically, one end and the other end of each of the first circulation pipe 302a and the second circulation pipe 302b are connected to the supply tank 301.

[0111] The first circulation pump 303a, the first circulation heater 304a, and the first circulation filter 305a are provided in the first circulation piping 302a. The second circulation pump 303b, the second circulation heater 304b, and the second circulation filter 305b are provided in the second circulation piping 302b. The first circulation pump 303a, the first circulation heater 304a, the first circulation filter 305a, a portion of the first circulation piping 302a, the second circulation pump 303b, the second circulation heater 304b, the second circulation filter 305b, and a portion of the second circulation piping 302b are housed in the fluid cabinet 12.

[0112] The first circulation pump 303a pumps the chemical solution from one end to the other end of the first circulation pipe 302a. As a result, the chemical solution circulates through the first circulation pipe 302a via the supply tank 301. The first circulation pump 303a is controlled by the control unit 102.

[0113] The first circulation heater 304a heats the chemical liquid flowing through the first circulation pipe 302a. The first circulation heater 304a is controlled by the control unit 102. The first circulation filter 305a removes foreign matter from the chemical liquid flowing through the first circulation pipe 302a.

[0114] The configurations of the second circulation pump 303b, the second circulation heater 304b, and the second circulation filter 305b are substantially the same as the configurations of the first circulation pump 303a, the first circulation heater 304a, and the first circulation filter 305a, and therefore a description thereof will be omitted.

[0115] 7, the substrate processing apparatus 100 further includes a recovery tank 401, a supply pipe 402, a branch pipe 403, a supply pump 404, a supply heater 405, a first on-off valve 406, a second on-off valve 407, and a replenishment unit 50. The recovery tank 401, the supply pipe 402, the branch pipe 403, the supply pump 404, the supply heater 405, the first on-off valve 406, the second on-off valve 407, and a portion of the replenishment unit 50 are housed in a fluid cabinet 12.

[0116] The fluid cabinet 12 accommodates a portion of the recovery pipe 202. The recovery tank 401 recovers the chemical liquid (processing liquid) circulating through the recovery pipe 202. Specifically, the other end of the recovery pipe 202 is connected to the recovery tank 401. Therefore, the used chemical liquid flows from the recovery pipe 202 into the recovery tank 401. As a result, a portion of the used chemical liquid discharged from the substrate processing unit 2 is stored (recovered) in the recovery tank 401. For example, 90% of the used chemical liquid may be recovered in the recovery tank 401. In other words, 10% of the used chemical liquid may be drained into the first drainage tank 19a.

[0117] Although not shown for ease of understanding, the other ends of the plurality of recovery pipes 202 corresponding to the substrate processing units 2 constituting the two towers TW are connected to the recovery tank 401. In this embodiment, the other ends of the six recovery pipes 202 are connected to the recovery tank 401.

[0118] The supply pipe 402 and the branch pipe 403 are tubular members through which the processing liquid flows. One end of the supply pipe 402 is connected to the recovery tank 401, and the other end of the supply pipe 402 is connected to the supply tank 301. The branch pipe 403 branches off from the supply pipe 402. A supply pump 404, a supply heater 405, and a first on-off valve 406 are provided in the supply pipe 402. A second on-off valve 407 is provided in the branch pipe 403.

[0119] Specifically, the supply pump 404, the supply heater 405, and the first on-off valve 406 are provided in this order from the upstream side to the downstream side of the supply pipe 402. One end of the branch pipe 403 is connected to the supply pipe 402 between the supply heater 405 and the first on-off valve 406. The other end of the branch pipe 403 is connected to the recovery tank 401.

[0120] The supply pump 404 sends the chemical liquid from one end of the supply pipe 402 toward a connection point P between the supply pipe 402 and the branch pipe 403. The supply heater 405 heats the chemical liquid flowing through the supply pipe 402. The supply pump 404 and the supply heater 405 are controlled by the control unit 102.

[0121] The first on-off valve 406 and the second on-off valve 407 can be opened and closed. The opening and closing operations of the first on-off valve 406 and the second on-off valve 407 are controlled by the control unit 102. The actuators of the first on-off valve 406 and the second on-off valve 407 are, for example, pneumatic actuators or electric actuators.

[0122] When supplying the chemical solution from the collection tank 401 to the supply tank 301, the control unit 102 opens the first on-off valve 406 and closes the second on-off valve 407. Then, the control unit 102 drives the supply pump 404. As a result, the chemical solution in the collection tank 401 is sent from one end to the other end of the supply pipe 402, and the chemical solution is supplied to the supply tank 301.

[0123] The temperature of the used chemical liquid collected in the collection tank 401 may be lower than the target temperature. When adjusting the temperature of the chemical liquid in the collection tank 401, the control unit 102 closes the first on-off valve 406 and opens the second on-off valve 407. The control unit 102 then drives the supply pump 404. As a result, the chemical liquid in the collection tank 401 is sent from one end of the supply pipe 402 to the other end of the branch pipe 403 and returned to the collection tank 401. In other words, the chemical liquid circulates through the collection tank 401. During this time, the supply heater 405 adjusts the temperature of the chemical liquid.

[0124] When a chemical solution at room temperature is used for substrate processing, the first circulation heater 304a, the second circulation heater 304b, the supply heater 405, the branch pipe 403, and the second opening / closing valve 407 may be omitted.

[0125] The replenishing unit 50 replenishes the chemical liquid (new liquid) in the collection tank 401. The replenishing unit 50 is controlled by the control unit 102. For example, the control unit 102 causes the replenishing unit 50 to replenish the chemical liquid (new liquid) in the collection tank 401 in response to the water level measured by a water level sensor (not shown) falling below a certain value.

[0126] The replenishment unit 50 may have, for example, a first replenishment pipe 51, a second replenishment pipe 53, a first replenishment on-off valve 54, a second replenishment on-off valve 55, a third replenishment on-off valve 56, a first flow rate adjustment valve 57, and a second flow rate adjustment valve 58. A portion of the first replenishment pipe 51, a portion of the second replenishment pipe 53, the first replenishment on-off valve 54, the second replenishment on-off valve 55, the third replenishment on-off valve 56, the first flow rate adjustment valve 57, and the second flow rate adjustment valve 58 are housed within the fluid cabinet 12.

[0127] The first replenishment pipe 51 and the second replenishment pipe 53 are tubular members through which the processing liquid flows. One end of the first replenishment pipe 51 is connected to the recovery tank 401. The first replenishment on / off valve 54, the second replenishment on / off valve 55, and the first flow rate adjustment valve 57 are provided on the first replenishment pipe 51. Specifically, the first replenishment on / off valve 54, the second replenishment on / off valve 55, and the first flow rate adjustment valve 57 are provided in this order from the downstream side to the upstream side of the first replenishment pipe 51.

[0128] One end of the second replenishment piping 53 is connected to the first replenishment piping 51 between the first replenishment on-off valve 54 and the second replenishment on-off valve 55. A third replenishment on-off valve 56 and a second flow rate adjustment valve 58 are provided on the second replenishment piping 53.

[0129] A chemical component is supplied to the first replenishment pipe 51. Water is supplied to the second replenishment pipe 53. The water may be, for example, DIW. When water flows from the second replenishment pipe 53 into the first replenishment pipe 51, the chemical component flowing through the first replenishment pipe 51 is mixed with the water, and a chemical (new liquid) is generated. Then, the chemical (new liquid) generated in the first replenishment pipe 51 is supplied to the collection tank 401.

[0130] The first replenishment on-off valve 54, the second replenishment on-off valve 55, and the third replenishment on-off valve 56 can be opened and closed. The opening and closing operations of the first replenishment on-off valve 54, the second replenishment on-off valve 55, and the third replenishment on-off valve 56 are controlled by the control unit 102. The actuators of the first replenishment on-off valve 54, the second replenishment on-off valve 55, and the third replenishment on-off valve 56 are, for example, pneumatic actuators or electric actuators. The control unit 102 opens the first replenishment on-off valve 54, the second replenishment on-off valve 55, and the third replenishment on-off valve 56 when replenishing the collection tank 401 with the chemical solution (new solution).

[0131] The first flow rate adjustment valve 57 adjusts the flow rate of the chemical component flowing through the first refill pipe 51. The second flow rate adjustment valve 58 adjusts the flow rate of water flowing through the second refill pipe 53. Specifically, the openings of the first flow rate adjustment valve 57 and the second flow rate adjustment valve 58 are adjustable. The flow rate of the chemical component depends on the opening of the first flow rate adjustment valve 57. Similarly, the flow rate of the water depends on the opening of the second flow rate adjustment valve 58. The opening of the first flow rate adjustment valve 57 may be manually adjusted by an operator. Similarly, the opening of the second flow rate adjustment valve 58 may be manually adjusted by an operator.

[0132] If the chemical solution is not an aqueous solution, the second replenishment pipe 53, the second replenishment on-off valve 55, the third replenishment on-off valve 56, and the second flow rate adjustment valve 58 may be omitted.

[0133] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 8. Fig. 8 is a block diagram showing the configuration of the substrate processing apparatus 100 of this embodiment. As shown in Fig. 8, in this embodiment, the storage unit 103 stores a recipe RP, a holding time HT, and a waiting time WT.

[0134] As already explained, the recipe RP specifies the execution order of a series of processes included in the substrate processing, the content of each process, and the conditions (parameter setting values) for each process. The control unit 102 controls the indexer robot IR, the center robot CR, the substrate processing unit 2, and the fluid box 15 (first liquid supply line 16a and second liquid supply line 16b) by referring to the recipe RP. For example, the recipe RP specifies the discharge destinations of the processing liquids in chronological order. The recipe RP also specifies the duration of the chemical liquid discharge process and the duration of the rinse discharge process.

[0135] Here, the duration of the chemical liquid discharge process refers to the length of time (supply time) for supplying the chemical liquid (processing liquid) to the substrate W. Similarly, the duration of the rinse discharge process refers to the length of time (supply time) for supplying the rinse liquid (processing liquid) to the substrate W. In other words, the duration of the chemical liquid discharge process refers to the length of time (discharge time) for discharging the chemical liquid from the first nozzle 5a. Similarly, the duration of the rinse discharge process refers to the length of time (discharge time) for discharging the rinse liquid from the second nozzle 5b. Hereinafter, the duration of the chemical liquid discharge process may be referred to as the "chemical liquid discharge time."

[0136] In this embodiment, the control unit 102 controls the switching unit 18 by referring to the recipe RP, the holding time HT, and the waiting time WT.

[0137] Specifically, the recipe RP specifies a first discharge destination, a second discharge destination, and a third discharge destination in this order as the discharge destinations of the processing liquid. That is, the recipe RP specifies the first discharge destination as the discharge destination of the processing liquid, and then specifies the second discharge destination as the discharge destination of the processing liquid. Then, the recipe RP specifies the second discharge destination as the discharge destination of the processing liquid, and then specifies the third discharge destination as the discharge destination of the processing liquid. Specifically, the recipe RP specifies the third discharge destination as the discharge destination of the processing liquid after the chemical liquid discharge time (a predetermined discharge time) has elapsed since the first nozzle 5a started to discharge the chemical liquid. Here, the first discharge destination corresponds to the drain pipe 201. The second discharge destination corresponds to the recovery pipe 202. The third discharge destination corresponds to the second discharge pipe 17b.

[0138] When the recipe RP specifies a first discharge destination as the discharge destination of the processing liquid, the control unit 102 controls the switching unit 18 to discharge the processing liquid (chemical liquid) from the switching unit 18 to the drain pipe 201. When a retention time HT has elapsed since the recipe RP specified a second discharge destination as the discharge destination of the processing liquid, the control unit 102 controls the switching unit 18 to discharge the processing liquid (chemical liquid) from the switching unit 18 to the recovery pipe 202. When a waiting time WT has elapsed since the recipe RP specified a third discharge destination as the discharge destination of the processing liquid, the control unit 102 controls the switching unit 18 to discharge the processing liquid (chemical liquid) from the switching unit 18 to the drain pipe 201.

[0139] In this embodiment, the storage unit 103 stores a first recipe RP1, a second recipe RP2, a first holding time HT1, a second holding time HT2, a first waiting time WT1, and a second waiting time WT2. In other words, the recipe RP includes the first recipe RP1 and the second recipe RP2. The holding time HT includes the first holding time HT1 and the second holding time HT2. The waiting time WT includes the first waiting time WT1 and the second waiting time WT2.

[0140] The first holding time HT1 and the first waiting time WT1 correspond to the first recipe RP1. The second holding time HT2 and the second waiting time WT2 correspond to the second recipe RP2. The first recipe RP1 and the second recipe RP2 have different chemical liquid discharge times. In this embodiment, the chemical liquid discharge time of the first recipe RP1 is longer than the chemical liquid discharge time of the second recipe RP2. The chemical liquid discharge time of the first recipe RP1 is, for example, 60 seconds. The chemical liquid discharge time of the second recipe RP2 is, for example, 6 seconds. Hereinafter, the chemical liquid discharge time of the first recipe RP1 may be referred to as the "first chemical liquid discharge time T10." Furthermore, the chemical liquid discharge time of the second recipe RP2 may be referred to as the "second chemical liquid discharge time T11."

[0141] When the control unit 102 controls the substrate processing unit 2 with reference to the first recipe RP1, the control unit 102 controls the switching unit 18 with reference to the first recipe RP1, the first holding time HT1, and the first waiting time WT1. Similarly, when the control unit 102 controls the substrate processing unit 2 with reference to the second recipe RP2, the control unit 102 controls the switching unit 18 with reference to the second recipe RP2, the second holding time HT2, and the second waiting time WT2.

[0142] Furthermore, in this embodiment, the second recipe RP2 includes setting information SP. When the recipe RP does not include setting information SP, the control unit 102 refers to the first holding time HT1 and the first waiting time WT1. Furthermore, when the recipe RP includes setting information SP, the control unit 102 refers to the second holding time HT2 and the second waiting time WT2. The setting information SP may indicate, for example, a specific nozzle number.

[0143] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 8 and 9(a) Fig. 9(a) is a diagram showing the flow of processing based on a first recipe RP1.

[0144] 9(a), the control unit 102 executes the nozzle movement process by referring to the first recipe RP1. Specifically, the control unit 102 controls the first nozzle movement unit 6a to move the first nozzle 5a from the first standby position to the processing position (from time t1 to time t2). The first recipe RP1 specifies a first discharge destination as the discharge destination of the processing liquid in the step of moving the first nozzle 5a. Therefore, the control unit 102 controls the switching unit 18 so that the processing liquid (chemical liquid) is discharged from the switching unit 18 to the drainage pipe 201.

[0145] After moving the first nozzle 5a to the processing position, the control unit 102 starts the chemical liquid discharge process by referring to the first recipe RP1. Specifically, the control unit 102 controls the first liquid supply line 16a to discharge the chemical liquid from the first nozzle 5a toward the substrate W (time t2).

[0146] 9(a), the first recipe RP1 specifies the second destination as the destination of the processing liquid while the chemical (processing liquid) is being discharged (time t3). That is, the destination of the processing liquid specified by the first recipe RP1 is switched from the first destination to the second destination while the chemical (processing liquid) is being discharged.

[0147] When first chemical liquid discharge time T10 has elapsed since the start of discharge of the chemical liquid (time t5), control unit 102 controls first liquid supply line 16a to stop discharge of the chemical liquid from first nozzle 5a. Then, control unit 102 executes a nozzle switching process with reference to first recipe RP1 (time t5 to time t7). Specifically, control unit 102 controls first nozzle moving unit 6a to move first nozzle 5a from the processing position to the first standby position, and controls second nozzle moving unit 6b to move second nozzle 5b from the second standby position to the processing position.

[0148] The first recipe RP1 specifies the third destination as the destination of the processing liquid during the nozzle switching step (time t6). That is, the destination of the processing liquid specified by the first recipe RP1 switches from the second destination to the third destination. Specifically, the first recipe RP1 specifies the third destination as the destination of the processing liquid when a predetermined time has elapsed since the end of the discharge of the chemical liquid. When the third destination is specified as the destination of the processing liquid, the control unit 102 executes a guard switching process. Specifically, the control unit 102 controls the liquid receiver moving unit 8 to move the first guard unit 71a from the first upper position to the first lower position.

[0149] After executing the nozzle switching process and the guard switching process, the control unit 102 executes the rinse liquid discharge process by referring to the first recipe RP1. Specifically, the control unit 102 controls the second liquid supply line 16b to discharge the rinse liquid from the second nozzle 5b (time t7).

[0150] When a predetermined time (time t7 to time t9) has elapsed since the start of the discharge of the rinsing liquid, the control unit 102 controls the second liquid supply line 16b to stop the discharge of the rinsing liquid from the second nozzle 5b. Then, the control unit 102 starts the drying process by referring to the first recipe RP1 (time t9). Specifically, the control unit 102 controls the substrate rotation unit 4 to increase the rotation speed of the substrate W, thereby rotating the substrate W at high speed. As a result, the processing liquid is discharged from the substrate W, and the substrate W is dried.

[0151] When a predetermined time has elapsed since the rotation speed of the substrate W was increased (time t9 to time t11), the control unit 102 ends the substrate processing.

[0152] Next, with reference to Figures 9(a) and 9(b), the chemical liquid passing through the tip of the first nozzle 5a, the used chemical liquid flowing into the switching unit 18, and the destination to which the used chemical liquid is discharged will be described. Figure 9(b) is a diagram showing a first example of the chemical liquid passing through the tip of the first nozzle 5a, the used chemical liquid flowing into the switching unit 18, and the destination to which the used chemical liquid is discharged. In detail, Figure 9(b) shows the chemical liquid passing through the tip of the first nozzle 5a, the used chemical liquid flowing into the switching unit 18, and the destination to which the used chemical liquid is discharged in the second substrate processing apparatus 100B described with reference to Figure 1.

[0153] 9(a) and 9(b), from the start of discharge of the chemical liquid to the end of discharge of the chemical liquid (time t2 to time t5), the chemical liquid passes through the tip of the first nozzle 5a. The chemical liquid discharged from the first nozzle 5a is supplied to the substrate W, then discharged from the substrate W, received in the liquid receiving section 7, flows into the first discharge pipe 17a, and flows through the first discharge pipe 17a to the switching section 18. As a result, with a delay from the start of discharge of the chemical liquid, the chemical liquid starts to flow into the switching section 18 (time t3).

[0154] In the example shown in FIGS. 9(a) and 9(b), when the chemical liquid starts to flow into the switching unit 18 (time t3), the first recipe RP1 specifies the second discharge destination (recovery pipe 202) as the discharge destination of the processing liquid. The control unit 102 controls the switching unit 18 so that the chemical liquid is discharged from the switching unit 18 to the recovery pipe 202 after the first retention time HT1 has elapsed (time t4) since the second discharge destination (recovery pipe 202) was specified as the discharge destination of the processing liquid by the first recipe RP1. Therefore, the discharge destination of the chemical liquid is held at the drainage pipe 201 until the first retention time HT1 has elapsed. As a result, the chemical liquid is discharged from the switching unit 18 to the drainage pipe 201 until the first retention time HT1 has elapsed (time t3 to time t4). Then, after the first retention time HT1 has elapsed, the chemical liquid is discharged from the switching unit 18 to the drainage pipe 202.

[0155] Furthermore, even after the discharge of the chemical liquid is completed, the chemical liquid remaining on the substrate W, in the liquid receiving unit 7, or in the first discharge pipe 17a flows into the switching unit 18 (time t5 to time t8). The control unit 102 maintains the recovery pipe 202 as the discharge destination of the processing liquid until the first waiting time WT1 has elapsed since the third discharge destination was designated in the first recipe RP1. In the example shown in FIGS. 9(a) to 9(c), the first waiting time WT1 is set so that the discharge destination of the chemical liquid is maintained in the recovery pipe 202 at least until the inflow of the chemical liquid into the switching unit 18 is completed. Therefore, after the discharge of the chemical liquid is completed, the chemical liquid remaining on the substrate W, in the liquid receiving unit 7, or in the first discharge pipe 17a is discharged to the recovery pipe 202. For example, the first waiting time WT1 may be longer than the time from the designation of the third discharge destination as the discharge destination of the processing liquid in the first recipe RP1 until the completion of the drying process.

[0156] Here, the retention time HT will be further explained. The retention time HT is set to a time length corresponding to the recovery rate (target value) of the chemical liquid (processing liquid). Specifically, the retention time HT is set so that the recovery rate of the chemical liquid (processing liquid) becomes the target value or a value close to the target value. In other words, the retention time HT indicates a time length adjusted according to the target value of the recovery rate. The recovery rate of the chemical liquid (processing liquid) indicates the ratio between the amount of the chemical liquid (processing liquid) supplied to the substrate W by the substrate processing unit 2 and the amount of the chemical liquid (processing liquid) recovered in the recovery tank 401. In other words, the recovery rate of the chemical liquid indicates the ratio between the amount of the chemical liquid discharged from the first nozzle 5a toward the substrate W and the amount of the chemical liquid (processing liquid) recovered in the recovery tank 401. The target value of the recovery rate of the chemical liquid may be set to, for example, 90%. By setting the retention time HT to a time length corresponding to the recovery rate (target value) of the chemical liquid (processing liquid), the recovery rate of the chemical liquid (processing liquid) can be stabilized at or close to the target value. In other words, the recovery rate of the chemical (treatment liquid) can be stabilized at a value within a target range. For example, if the target value for the recovery rate of the chemical is 90%, the recovery rate of the chemical (treatment liquid) can be stabilized at a value within the range of 89% to 91%.

[0157] Next, we will explain how to set the timing for switching the destination of the treatment liquid from the first destination to the second destination during discharge of the chemical liquid. Hereinafter, the timing for switching the destination of the treatment liquid from the first destination to the second destination may be referred to as the "destination switching timing." By adjusting the discharge switching timing, the ratio between the time length T1 from the start of chemical liquid discharge to the discharge switching timing and the time length T2 from the discharge switching timing to the end of chemical liquid discharge is adjusted.

[0158] When the destination of the processing liquid is switched from the first destination to the second destination during discharge of the chemical liquid, the timing of switching the destination is set so that the recovery rate of the processing liquid (chemical liquid) can be adjusted to a target value or close to the target value by adjusting the retention time HT. By setting the timing of switching the destination in this way, the retention time HT can be set to a time length corresponding to the recovery rate (target value) of the chemical liquid (processing liquid).

[0159] Next, with reference to Figures 9(a) to 9(c), the chemical liquid passing through the tip of the first nozzle 5a, the used chemical liquid flowing into the switching unit 18, and the destinations to which the used chemical liquid is discharged will be described. Figure 9(c) is a diagram showing a second example of the chemical liquid passing through the tip of the first nozzle 5a, the used chemical liquid flowing into the switching unit 18, and the destinations to which the used chemical liquid is discharged. In detail, Figure 9(c) shows the chemical liquid passing through the tip of the first nozzle 5a, the used chemical liquid flowing into the switching unit 18, and the destinations to which the used chemical liquid is discharged in the first substrate processing apparatus 100A described with reference to Figure 1.

[0160] As shown in Figures 9(a) to 9(c), even if the positional relationship between the fluid cabinet 12 (recovery tank 401) and the device main body 11 is different (see the positional relationship between the fluid cabinets 12A, 12B and the device main bodies 11A, 11B shown in Figure 1), the recovery rate of the chemical liquid (treatment liquid) can be stabilized at or near the target value using the first retention time HT1.

[0161] In detail, as shown in Figures 9(b) and 9(c), when the device main body 11 (device main body 11A) is installed away from the fluid cabinet 12 (fluid cabinet 12A), the time length (time t5 to time t10) from the end of the discharge of the chemical liquid to the end of the flow of the chemical liquid into the switching section 18 is longer than the time length (time t5 to time t8) when the fluid cabinet 12 (fluid cabinet 12B) is installed directly below the device main body 11 (device main body 11B).

[0162] Therefore, in order to set the recovery rate of the chemical liquid (treatment liquid) to a target value, the first waiting time WT1 (waiting time WT) is adjusted so that the discharge destination of the chemical liquid is switched from the recovery piping 202 to the drainage piping 201 between the end of the discharge of the chemical liquid and the end of the flow of the chemical liquid into the switching unit 18, and when a portion of the chemical liquid is drained after the discharge of the chemical liquid is completed, the first waiting time WT1 (waiting time WT) needs to be changed depending on the positional relationship between the fluid cabinet 12 (recovery tank 401) and the device main body 11.

[0163] In contrast, according to the present embodiment, by draining a portion of the chemical liquid at the beginning of the chemical liquid discharge process, the recovery rate of the chemical liquid (treatment liquid) can be stabilized at or near the target value without changing the first retention time HT1 (retention time HT) depending on the positional relationship between the fluid cabinet 12 (recovery tank 401) and the apparatus body 11. Specifically, after the end of the chemical liquid discharge process, the flow rate of the chemical liquid from the liquid receiving unit 7 to the switching unit 18 is affected by the positional relationship between the fluid cabinet 12 (recovery tank 401) and the apparatus body 11, whereas at the beginning of the chemical liquid discharge process, the flow rate of the chemical liquid from the liquid receiving unit 7 to the switching unit 18 is less affected by the positional relationship between the fluid cabinet 12 (recovery tank 401) and the apparatus body 11. Therefore, by draining the chemical liquid at the beginning of the chemical liquid discharge process, the amount of the drained chemical liquid is stabilized. As a result, the recovery rate of the chemical liquid (treatment liquid) can be stabilized at or near the target value.

[0164] As described above with reference to Figures 1 to 9(c), according to this embodiment, the retention time HT (first retention time HT1) indicates a time length corresponding to the recovery rate (target value) of the chemical liquid (treatment liquid), so that the chemical liquid (treatment liquid) can be recovered at or near the predetermined target value of the recovery rate.

[0165] Furthermore, if all of the used chemical liquid is collected, the cleanliness of the chemical liquid contained in the fluid cabinet 12 is likely to decrease because the used chemical liquid has a low cleanliness level. As a result, it is necessary to increase the frequency with which the chemical liquid in the fluid cabinet 12 is replaced with a new liquid. In contrast, according to this embodiment, by draining and recovering a portion of the used chemical liquid, the frequency with which the chemical liquid is replaced with a new liquid can be reduced. For example, the control unit 102 controls the replenishing unit 50 to replenishing the collection tank 401 with an amount of chemical liquid (new liquid) equivalent to the amount of used chemical liquid that was drained. As a result, the cleanliness of the chemical liquid in the collection tank 401 is less likely to decrease. Therefore, the frequency with which the chemical liquid is replaced with a new liquid is less likely to increase.

[0166] The retention time HT may be changed depending on the positional relationship between the fluid cabinet 12 (collection tank 401) and the apparatus body 11. In this case, the retention time HT indicates a time length corresponding to the positional relationship between the fluid cabinet 12 (collection tank 401) and the apparatus body 11. In this case, the discharge destination switching timing is set so that even if the retention time HT is changed depending on the positional relationship between the fluid cabinet 12 (collection tank 401) and the apparatus body 11, the recovery rate of the chemical liquid (treatment liquid) can be stabilized at or near the target value by adjusting the retention time HT. By adjusting the retention time HT depending on the positional relationship between the fluid cabinet 12 (collection tank 401) and the apparatus body 11, the recovery rate of the treatment liquid (chemical liquid) can be more stabilized at or near the target value.

[0167] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 8 and Fig. 10(a). Fig. 10(a) is a diagram showing a processing flow based on a second recipe RP2. As shown in Fig. 10(a), the second recipe RP2 is the same as the first recipe RP1 shown in Fig. 9(a), except that the chemical liquid discharge time is different from that of the first recipe RP1.

[0168] Specifically, the control unit 102 executes the nozzle movement process by referring to the second recipe RP2. As a result, the first nozzle 5a moves from the first standby position to the processing position (from time t11 to time t12). The second recipe RP2 specifies the first discharge destination as the discharge destination of the processing liquid in the step of moving the first nozzle 5a.

[0169] After moving the first nozzle 5a to the processing position, the control unit 102 starts the chemical liquid discharge process by referring to the second recipe RP2, and as a result, the first nozzle 5a starts discharging the chemical liquid (time t12).

[0170] In the example shown in FIG. 10(a), the second recipe RP2 specifies the second discharge destination as the discharge destination of the processing liquid during the discharge of the chemical liquid (processing liquid) (time t13).

[0171] When second chemical liquid discharge time T11 has elapsed since the start of discharge of the chemical liquid (time t15), control unit 102 controls first liquid supply line 16a to stop discharge of the chemical liquid from first nozzle 5a. Then, control unit 102 executes a nozzle switching process with reference to second recipe RP2 (time t15 to time t17). As a result, first nozzle 5a moves from the processing position to the first standby position, and second nozzle 5b moves from the second standby position to the processing position.

[0172] The second recipe RP2 specifies the third destination as the destination of the processing liquid during the nozzle switching step (time t16), which causes the first guard part 71a to move from the first upper position to the first lower position.

[0173] After executing the nozzle switching process and the guard switching process, the control unit 102 executes the rinse liquid discharge process by referring to the second recipe RP2, which causes the second nozzle 5b to start discharging the rinse liquid (time t17).

[0174] When a predetermined time (from time t17 to time t20) has elapsed since the start of the discharge of the rinsing liquid, the control unit 102 controls the second liquid supply line 16b to stop the discharge of the rinsing liquid from the second nozzle 5b. Then, the control unit 102 starts the drying process by referring to the second recipe RP2 (time t20). As a result, the substrate W rotates at high speed and dries.

[0175] When a predetermined time has elapsed since the rotation speed of the substrate W was increased (time t20 to time t21), the control unit 102 ends the substrate processing.

[0176] Next, with reference to Figures 10(a) and 10(b), the chemical liquid passing through the tip of the first nozzle 5a, the used chemical liquid flowing into the switching unit 18, and the destination to which the used chemical liquid is discharged will be described. Figure 10(b) is a diagram showing a third example of the chemical liquid passing through the tip of the first nozzle 5a, the used chemical liquid flowing into the switching unit 18, and the destination to which the used chemical liquid is discharged. In detail, Figure 10(b) shows the chemical liquid passing through the tip of the first nozzle 5a, the used chemical liquid flowing into the switching unit 18, and the destination to which the used chemical liquid is discharged in the second substrate processing apparatus 100B described with reference to Figure 1.

[0177] 10(a) and 10(b), the chemical liquid passes through the tip of first nozzle 5a from the start of discharge of the chemical liquid until the end of discharge of the chemical liquid (time t12 to time t15). The flow of the chemical liquid into switching section 18 starts with a delay from the start of discharge of the chemical liquid (time t13).

[0178] In the example shown in FIGS. 10(a) and 10(b), when the chemical liquid starts to flow into the switching unit 18 (time t13), the second recipe RP2 specifies the second discharge destination (recovery pipe 202) as the discharge destination of the processing liquid. The control unit 102 controls the switching unit 18 so that the chemical liquid is discharged from the switching unit 18 to the recovery pipe 202 after the second retention time HT2 has elapsed (time t14) since the second discharge destination (recovery pipe 202) was specified as the discharge destination of the processing liquid by the second recipe RP2. Therefore, the discharge destination of the chemical liquid is held at the drainage pipe 201 until the second retention time HT2 has elapsed. As a result, the chemical liquid is discharged from the switching unit 18 to the drainage pipe 201 until the second retention time HT2 has elapsed (time t13 to time t14). Then, after the second retention time HT2 has elapsed, the chemical liquid is discharged from the switching unit 18 to the drainage pipe 202.

[0179] Furthermore, even after the discharge of the chemical liquid has been completed, the chemical liquid remaining on the substrate W, in the liquid receiving unit 7, or in the first discharge pipe 17a continues to flow into the switching unit 18 (time t15 to time t18). The control unit 102 maintains the recovery pipe 202 as the discharge destination of the processing liquid until the second waiting time WT2 has elapsed since the third discharge destination was specified by the second recipe RP2. In the example shown in FIGS. 10(a) to 10(c), the second waiting time WT2 is set so that the discharge destination of the chemical liquid is maintained at the recovery pipe 202 at least until the inflow of the chemical liquid into the switching unit 18 has been completed. Therefore, after the discharge of the chemical liquid has been completed, the chemical liquid remaining on the substrate W, in the liquid receiving unit 7, or in the first discharge pipe 17a is discharged to the recovery pipe 202 (time t15 to time t18 in FIG. 10(b) and time t15 to time t19 in FIG. 10(c)).

[0180] The second retention time HT2, like the first retention time HT1, is set to a time length corresponding to the recovery rate (target value) of the chemical (treatment liquid). That is, like the first retention time HT1, the second retention time HT2 indicates a time length adjusted in accordance with the target value of the recovery rate. By setting the second retention time HT2 to a time length corresponding to the recovery rate (target value) of the chemical (treatment liquid), the recovery rate of the chemical (treatment liquid) can be stabilized at or near the target value.

[0181] The timing of switching the discharge destination in the second recipe RP2 is the same as that in the first recipe RP1. By adjusting the timing of switching the discharge destination in the second recipe RP2, the ratio between the time length T1 from the start of chemical liquid discharge to the discharge switching timing and the time length T2 from the discharge switching timing to the end of chemical liquid discharge is adjusted. The timing of switching the discharge destination in the second recipe RP2 is set so that the recovery rate of the chemical liquid (processing liquid) can be stabilized at or near the target value by adjusting the second retention time HT2.

[0182] Next, with reference to Figures 10(a) to 10(c), the chemical liquid passing through the tip of the first nozzle 5a, the used chemical liquid flowing into the switching unit 18, and the destinations to which the used chemical liquid is discharged will be described. Figure 10(c) is a diagram showing a fourth example of the chemical liquid passing through the tip of the first nozzle 5a, the used chemical liquid flowing into the switching unit 18, and the destinations to which the used chemical liquid is discharged. In detail, Figure 10(c) shows the chemical liquid passing through the tip of the first nozzle 5a, the used chemical liquid flowing into the switching unit 18, and the destinations to which the used chemical liquid is discharged in the first substrate processing apparatus 100A described with reference to Figure 1.

[0183] 10(a) to 10(c), even if the positional relationship between the fluid cabinet 12 (recovery tank 401) and the apparatus main body 11 is different (see the positional relationship between the fluid cabinets 12A, 12B and the apparatus main bodies 11A, 11B shown in FIG. 1), the recovery rate of the chemical liquid (processing liquid) can be stabilized at or near the target value by using the second retention time HT2. Therefore, even with a recipe RP having a short chemical liquid discharge time, the recovery rate of the chemical liquid (processing liquid) can be stabilized at or near the target value by using the second retention time HT2, as with the recipe RP having a long chemical liquid discharge time described with reference to FIGS. 9(a) to 9(c).

[0184] Furthermore, even when the chemical liquid ejection time is short, as in the case where the chemical liquid ejection time is long, if the device main body 11 (device main body 11A) is installed away from the fluid cabinet 12 (fluid cabinet 12A), the length of time (time t15 to time t19) from the end of the ejection of the chemical liquid to the end of the flow of the chemical liquid into the switching section 18 will be longer than the length of time (time t15 to time t18) when the fluid cabinet 12 (fluid cabinet 12B) is installed directly below the device main body 11 (device main body 11B).

[0185] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 8 and Fig. 11(a). Fig. 11(a) is a diagram showing a modified example of the processing flow based on the first recipe RP1. The first recipe RP1 shown in Fig. 11(a) differs from the first recipe RP1 shown in Fig. 9(a) in that a second destination is specified as the destination of the processing liquid (chemical liquid) when the processing liquid (chemical liquid) starts to be discharged onto the substrate W.

[0186] Next, with reference to Figures 11(a) and 11(b), the chemical liquid passing through the tip of the first nozzle 5a, the used chemical liquid flowing into the switching unit 18, and the destination to which the used chemical liquid is discharged will be described. Figure 11(b) is a diagram showing a fifth example of the chemical liquid passing through the tip of the first nozzle 5a, the used chemical liquid flowing into the switching unit 18, and the destination to which the used chemical liquid is discharged. In detail, Figure 11(b) shows the chemical liquid passing through the tip of the first nozzle 5a, the used chemical liquid flowing into the switching unit 18, and the destination to which the used chemical liquid is discharged in the second substrate processing apparatus 100B described with reference to Figure 1.

[0187] 11(b), the first retention time HT1 is longer than the first retention time HT1 shown in FIG. 9(b). Specifically, in the examples shown in FIGS. 11(a) and 11(b), the control unit 102 controls the switching unit 18 so that the chemical liquid is discharged from the switching unit 18 to the recovery pipe 202 after the first retention time HT1 has elapsed (time t4) from the start of the discharge of the chemical liquid (time t2). As a result, the chemical liquid is discharged from the switching unit 18 to the drainage pipe 201 from the start of the inflow of the chemical liquid into the switching unit 18 until the first retention time HT1 has elapsed (time t3 to time t4). Therefore, similar to the example shown in FIG. 9(b), the recovery rate of the chemical liquid (treatment liquid) can be stabilized at or near the target value.

[0188] Next, with reference to Figures 11(a) to 11(c), the chemical liquid passing through the tip of the first nozzle 5a, the used chemical liquid flowing into the switching unit 18, and the destinations to which the used chemical liquid is discharged will be described. Figure 11(c) is a diagram showing a sixth example of the chemical liquid passing through the tip of the first nozzle 5a, the used chemical liquid flowing into the switching unit 18, and the destinations to which the used chemical liquid is discharged. In detail, Figure 11(c) shows the chemical liquid passing through the tip of the first nozzle 5a, the used chemical liquid flowing into the switching unit 18, and the destinations to which the used chemical liquid is discharged in the first substrate processing apparatus 100A described with reference to Figure 1.

[0189] 11(a) to 11(c), even if the positional relationship between the fluid cabinet 12 (recovery tank 401) and the apparatus main body 11 is different (see the positional relationship between the fluid cabinets 12A, 12B and the apparatus main bodies 11A, 11B shown in FIG. 1), the recovery rate of the chemical liquid (treatment liquid) can be stabilized at or near the target value by using the first retention time HT1. Therefore, even if the second discharge destination is designated as the discharge destination of the treatment liquid at the start of chemical liquid discharge (time t2), the recovery rate of the chemical liquid (treatment liquid) can be stabilized at or near the target value by using the first retention time HT1, as in the example shown in FIGS. 9(a) to 9(c).

[0190] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figure 8 and Figure 12(a) Figure 12(a) is a diagram showing the flow of processing based on a first recipe RP1.

[0191] Specifically, the control unit 102 executes the nozzle movement process by referring to the first recipe RP1. As a result, the first nozzle 5a moves from the first standby position to the processing position (from time t31 to time t32). The first recipe RP1 specifies a first discharge destination as the discharge destination of the processing liquid in the step of moving the first nozzle 5a.

[0192] When the control unit 102 moves the first nozzle 5a to the processing position, it starts the chemical liquid discharge process by referring to the first recipe RP1, and as a result, the first nozzle 5a starts discharging the chemical liquid (time t32).

[0193] In the example shown in FIG. 12(a), the first recipe RP1 specifies the second destination as the destination of the processing liquid during the discharge of the chemical liquid (processing liquid) (time t33).

[0194] When first chemical liquid discharge time T10 has elapsed since the start of discharge of the chemical liquid (time t35), control unit 102 controls first liquid supply line 16a to stop discharge of the chemical liquid from first nozzle 5a. Then, control unit 102 executes a nozzle switching process with reference to first recipe RP1 (time t35 to time t37). As a result, first nozzle 5a moves from the processing position to the first standby position, and second nozzle 5b moves from the second standby position to the processing position.

[0195] The first recipe RP1 specifies the third destination as the destination of the processing liquid during the nozzle switching step (time t36), which causes the first guard part 71a to move from the first upper position to the first lower position.

[0196] After executing the nozzle switching process and the guard switching process, the control unit 102 executes the rinse liquid discharge process by referring to the first recipe RP1, which causes the second nozzle 5b to start discharging the rinse liquid (time t37).

[0197] When a predetermined time (time t37 to time t39) has elapsed since the start of the discharge of the rinsing liquid, the control unit 102 controls the second liquid supply line 16b to stop the discharge of the rinsing liquid from the second nozzle 5b. Then, the control unit 102 starts the drying process by referring to the first recipe RP1 (time t39). As a result, the substrate W rotates at high speed and dries.

[0198] When a predetermined time has elapsed since the rotation speed of the substrate W was increased (time t39 to time t41), the control unit 102 ends the substrate processing.

[0199] Next, with reference to Figures 12(a) and 12(b), the chemical liquid passing through the tip of the first nozzle 5a, the used chemical liquid flowing into the switching unit 18, and the destination to which the used chemical liquid is discharged will be described. Figure 12(b) is a diagram showing a seventh example of the chemical liquid passing through the tip of the first nozzle 5a, the used chemical liquid flowing into the switching unit 18, and the destination to which the used chemical liquid is discharged. In detail, Figure 12(b) shows the chemical liquid passing through the tip of the first nozzle 5a, the used chemical liquid flowing into the switching unit 18, and the destination to which the used chemical liquid is discharged in the second substrate processing apparatus 100B described with reference to Figure 1.

[0200] 12(a) and 12(b), the chemical liquid passes through the tip of first nozzle 5a from the start of discharge of the chemical liquid until the end of discharge of the chemical liquid (time t32 to time t35). The flow of the chemical liquid into switching section 18 starts with a delay from the start of discharge of the chemical liquid (time t33).

[0201] 12(a) and 12(b), when the chemical liquid starts to flow into switching unit 18 (time t33), first recipe RP1 specifies the second discharge destination (recovery pipe 202) as the discharge destination of the processing liquid. Controller 102 controls switching unit 18 so that the chemical liquid is discharged from switching unit 18 to recovery pipe 202 after first retention time HT1 has elapsed (time t34) since first recipe RP1 specified the second discharge destination (recovery pipe 202) as the discharge destination of the processing liquid. Therefore, the chemical liquid is discharged from switching unit 18 to drain pipe 201 until first retention time HT1 has elapsed (from time t33 to time t34).

[0202] Furthermore, even after the discharge of the chemical liquid has been completed, the chemical liquid remaining on the substrate W, in the liquid receiving unit 7, or in the first discharge pipe 17a flows into the switching unit 18 (time t35 to time t40). The control unit 102 keeps the recovery pipe 202 as the discharge destination of the processing liquid until the first waiting time WT1 has elapsed since the third discharge destination was specified as the discharge destination of the processing liquid by the first recipe RP1.

[0203] 12(a) and 12(b), the first waiting time WT1 (waiting time WT) is set so that the discharge destination of the chemical liquid switches from the recovery pipe 202 to the drain pipe 201 while the remaining chemical liquid is flowing into the switching unit 18. Therefore, when the first waiting time WT1 (waiting time WT) has elapsed since the third discharge destination was specified as the discharge destination of the chemical liquid (processing liquid) by the first recipe RP1 (recipe RP), the chemical liquid remaining in the substrate W, the liquid receiving unit 7, or the first drain pipe 17a flows into the drain pipe 201 via the switching unit 18 (time t38 to time t40).

[0204] As described with reference to FIG. 12(b), the first waiting time WT1 (waiting time WT) may indicate the length of time during which the discharge destination of the chemical liquid (processing liquid) switches from the recovery pipe 202 to the drainage pipe 201 while the chemical liquid (processing liquid) is flowing from the first discharge pipe 17a to the switching unit 18. As a result, the used chemical liquid is drained at the beginning of the chemical liquid discharge process, and the used chemical liquid is also drained after the chemical liquid discharge process is completed. Therefore, even if the amount of drainage at the beginning of the chemical liquid discharge process is not enough to set the recovery rate of the chemical liquid (processing liquid) to the target value or a value close to the target value, the recovery rate of the chemical liquid (processing liquid) can be stabilized at the target value or a value close to the target value by adjusting the first waiting time WT1 (waiting time WT). In other words, the total time of the first retention time HT1 (retention time HT) and the first waiting time WT1 (waiting time WT) is adjusted according to the target value of the recovery rate. Therefore, the total time of the first holding time HT1 (holding time HT) and the first waiting time WT1 (waiting time WT) indicates a time length adjusted according to the target value of the recovery rate.

[0205] 12(a) and 12(b), a process for draining used chemical liquid at the beginning of the chemical liquid discharge process and also draining used chemical liquid after the chemical liquid discharge process has been described using a recipe RP with a long chemical liquid discharge time as an example. However, in the case of a recipe RP with a short chemical liquid discharge time, the recovery rate of the chemical liquid (processing liquid) can be stabilized at or near the target value by draining used chemical liquid at the beginning of the chemical liquid discharge process and also draining used chemical liquid after the chemical liquid discharge process has been completed.

[0206] [Embodiment 2] Next, a second embodiment of the present invention will be described with reference to Figures 13 and 14. However, only the differences from the first embodiment will be described, and a description of the same things as in the first embodiment will be omitted. In the first embodiment, the holding time HT and the waiting time WT are set in advance, whereas in the second embodiment, the control unit 102 acquires the holding time HT and the waiting time WT based on information input to the control device 101.

[0207] Fig. 13 is a block diagram showing the configuration of a substrate processing apparatus 100 according to embodiment 2. As shown in Fig. 13, the substrate processing apparatus 100 further includes an input unit 104. Furthermore, a storage unit 103 stores a recipe RP and table data TB.

[0208] The input unit 104 is a user interface device operated by an operator. The input unit 104 inputs data to the control unit 102 in accordance with the operator's operation. In this embodiment, the operator can operate the input unit 104 to input position information, a target value for the recovery rate of the chemical (processing liquid), and the chemical discharge time. Here, the position information is information indicating the positional relationship between the fluid cabinet 12 (recovery tank 401) and the apparatus main body 11. Furthermore, the chemical discharge time input by the operator is the chemical discharge time set in the recipe RP (first recipe RP1 and second recipe RP2).

[0209] The input unit 104 typically includes a keyboard and a mouse. The input unit 104 may also include a touch sensor. The touch sensor is overlaid on the display surface of a display (not shown) and generates a signal indicating a touch operation by an operator on the display surface. By performing a touch operation, the operator can input position information, a target value for the recovery rate, and a chemical solution discharge time.

[0210] FIG. 14 is a diagram showing an example of table data TB. Table data TB associates position information, a recovery rate (target value) of the chemical (processing liquid), a chemical discharge time, a holding time HT, and a waiting time WT. Specifically, table data TB has a first field FD1 to a fifth field FD5. The first field FD1 stores a plurality of pieces of position information that have been set in advance. The second field FD2 stores a plurality of recovery rates (target values) that have been set in advance. The third field FD3 stores a chemical discharge time that has been set in the recipe RP (first recipe RP1 and second recipe RP2). The fourth field FD4 stores a plurality of holding times HT that have been set in advance. The fifth field FD5 stores a plurality of waiting times WT that have been set in advance.

[0211] The control unit 102 refers to the table data TB and acquires the position information input from the input unit 104, the target value of the recovery rate of the chemical liquid (treatment liquid), and the retention time HT and waiting time WT corresponding to the chemical liquid discharge time.

[0212] 13 and 14, the second embodiment of the present invention has been described. According to the second embodiment, similar to the first embodiment, the frequency of replacing the chemical solution with a new solution is unlikely to increase. Furthermore, the chemical solution (treatment solution) can be recovered at or near a predetermined target value for the recovery rate.

[0213] The embodiments of the present invention have been described above with reference to the drawings (FIGS. 1 to 14). However, the present invention is not limited to the above embodiments and can be implemented in various forms without departing from the spirit of the present invention. Furthermore, the components disclosed in the above embodiments can be modified as appropriate. For example, some of the components shown in one embodiment may be added to the components of another embodiment, or some of the components shown in one embodiment may be deleted from the embodiment.

[0214] The drawings mainly show each component in a schematic manner to facilitate understanding of the invention, and the thickness, length, number, spacing, etc. of each component shown in the drawings may differ from the actual ones due to the convenience of creating the drawings. Furthermore, the configuration of each component shown in the above embodiment is merely an example and is not particularly limited, and it goes without saying that various modifications are possible within a range that does not substantially deviate from the effects of the present invention.

[0215] 1 to 14, the retention time HT and waiting time WT are the same for each substrate processing unit 2 included in the substrate processing apparatus 100, but the retention time HT and waiting time WT may be changed for each substrate processing unit 2 included in the substrate processing apparatus 100. Since the positional relationship between each substrate processing unit 2 included in the substrate processing apparatus 100 and the fluid cabinet 12 (recovery tank 401) differs for each substrate processing unit 2, adjusting the retention time HT and waiting time WT for each substrate processing unit 2 included in the substrate processing apparatus 100 makes it possible to stabilize the recovery rate of the processing liquid (chemical liquid) at or near the target value.

[0216] Furthermore, in the embodiment described with reference to Figures 1 to 14, the substrate processing apparatus of the present invention was described using two recipes RP (first recipe RP1 and second recipe RP2) as an example, but the recovery rate of the processing liquid (chemical liquid) can also be stabilized at or near the target value for three or more recipes RP with different chemical liquid discharge times.

[0217] Furthermore, in the embodiment described with reference to FIGS. 1 to 14, the holding time HT and the waiting time WT are not parameters set in the recipe RP, but the holding time HT and the waiting time WT may be set in the recipe RP.

[0218] 1 to 14, three substrate processing units 2 are stacked one above the other, but the number of vertically stacked substrate processing units 2 is not limited to three. The number of vertically stacked substrate processing units 2 may be two or more. Alternatively, the substrate processing units 2 do not have to be stacked.

[0219] 1 to 14, the substrate processing apparatus 100 includes four towers TW, but the number of towers TW is not particularly limited. For example, the substrate processing apparatus 100 may include six towers TW.

[0220] 1 to 14, the substrate holding unit 3 is a clamping type chuck that brings multiple chuck members 31 into contact with the peripheral edge surface of the substrate W, but the method of holding the substrate W is not particularly limited as long as it can hold the substrate W horizontally. For example, the substrate holding unit 3 may be a vacuum type chuck or a Bernoulli type chuck.

[0221] 1 to 14, the substrate processing apparatus 100 includes two fluid cabinets 12, but the number of fluid cabinets 12 is not particularly limited. For example, the substrate processing apparatus 100 may include one fluid cabinet 12.

[0222] 1 to 14, the substrate processing apparatus 100 includes two drainage tanks (the first drainage tank 19a and the second drainage tank 19b) for each tower TW, but the number of drainage tanks is not particularly limited. For example, the substrate processing apparatus 100 may include one drainage tank for each tower TW. [Industrial Applicability]

[0223] The present invention is useful in the field of substrate processing. [Explanation of symbols]

[0224] 2: Substrate processing section 3: Board holding part 5a: First nozzle 5b: Second nozzle 7: Liquid receiving part 11: Device body 11A: Device body 11B: Device body 11C: Device body 17a: 1st discharge pipe 17b: 2nd discharge pipe 18: Switching section 100: Substrate processing apparatus 100A: First substrate processing apparatus 100B: Second substrate processing apparatus 100C: Third substrate processing apparatus 102: Control unit 103: Storage section 201: Drainage piping 202: Recovery piping 401: Collection tank HT: retention time HT1: 1st retention time HT2: 2nd retention time RP: Recipe RP1: First recipe RP2: Second recipe SP: Setting information T10: First chemical solution discharge time T11: Second chemical solution discharge time TB: Table data W: Substrate WT: Waiting time WT1: First waiting time WT2: Second waiting time

Claims

1. A substrate processing apparatus including an apparatus main body and a recovery tank, The device body includes: a substrate processing unit that supplies a processing liquid to a substrate to process the substrate; a recovery pipe and a drainage pipe for circulating the processing liquid discharged from the substrate processing unit; a switching unit that switches a destination of the processing liquid discharged from the substrate processing unit between the recovery pipe and the drain pipe; a storage unit that stores a procedure of a process to be performed by the substrate processing unit, a recipe that specifies a destination of the processing liquid, and a retention time; a control unit that controls the substrate processing unit by referring to the recipe and also controls the switching unit by referring to the recipe and the holding time; Equipped with the recovery tank recovers the treatment liquid circulating through the recovery pipe; the recipe specifies a first destination as a destination of the processing liquid, and then specifies a second destination as a destination of the processing liquid; the first discharge destination corresponds to the drainage pipe; The second discharge destination corresponds to the recovery pipe, The control unit When the first discharge destination is designated as a discharge destination of the processing liquid by the recipe, the switching unit is controlled so that the processing liquid is discharged from the switching unit to the drain pipe; a substrate processing apparatus that controls the switching unit so that the processing liquid is discharged from the switching unit to the recovery pipe when the retention time has elapsed since the second discharge destination was specified as the discharge destination of the processing liquid by the recipe.

2. The recipes include a first recipe and a second recipe, the first recipe and the second recipe have different supply times, the supply time indicates a time length for supplying the processing liquid to the substrate, the holding time includes a first holding time corresponding to the first recipe and a second holding time corresponding to the second recipe; The control unit When controlling the substrate processing unit with reference to the first recipe, the switching unit is controlled with reference to the first recipe and the first holding time. The substrate processing apparatus according to claim 1 , wherein when the substrate processing section is controlled with reference to the second recipe, the switching section is controlled with reference to the second recipe and the second holding time.

3. the second recipe includes setting information; The control unit When the setting information is not included in the recipe, the first retention time is referred to; The substrate processing apparatus according to claim 2 , wherein the second holding time is referred to when the setting information is included in the recipe.

4. the retention time indicates a time length corresponding to the recovery rate of the treatment liquid, 4. The substrate processing apparatus according to claim 1, wherein the recovery rate of the processing liquid indicates a ratio between an amount of the processing liquid supplied to the substrate by the substrate processing unit and an amount of the processing liquid recovered in the recovery tank.

5. the collection tank is disposed below the device body, The substrate processing apparatus according to claim 1 , wherein the retention time indicates a time length corresponding to a positional relationship between the recovery tank and the apparatus main body.

6. the storage unit further stores table data correlating positional information indicating a positional relationship between the recovery tank and the apparatus main body, a recovery rate of the processing liquid, a supply time indicating a time length for supplying the processing liquid to the substrate, and the retention time; the recovery rate of the processing liquid indicates a ratio between the amount of the processing liquid supplied to the substrate by the substrate processing unit and the amount of the processing liquid recovered in the recovery tank; The substrate processing apparatus according to claim 1 , wherein the control unit acquires the retention time by referring to the table data.

7. The substrate processing apparatus according to claim 1 , wherein the recipe specifies the second destination as a destination for the processing liquid while the processing liquid is being supplied.

8. 4. The substrate processing apparatus according to claim 1, wherein the recipe specifies the second destination as a destination of the processing liquid when supply of the processing liquid starts.

9. The substrate processing apparatus according to claim 1 , wherein the retention time is set in the recipe.

10. the treatment liquid includes a first treatment liquid and a second treatment liquid, The substrate processing unit includes: a substrate holder that holds the substrate horizontally; a first nozzle that ejects the first processing liquid toward the substrate held by the substrate holder; a second nozzle that ejects the second processing liquid toward the substrate held by the substrate holder; a liquid receiving portion that surrounds the substrate held by the substrate holding portion and receives the first processing liquid and the second processing liquid discharged from the substrate; Equipped with The substrate processing apparatus includes: a first discharge pipe for discharging the first treatment liquid from the liquid receiving portion; a second discharge pipe for discharging the second processing liquid from the liquid receiving portion; Further provided with the first discharge pipe allows the first treatment liquid to flow from the liquid receiving section to the switching section; the recipe specifies a third discharge destination as a discharge destination of the processing liquid after a predetermined discharge time has elapsed since the first nozzle started to discharge the first processing liquid; The third discharge destination corresponds to the second discharge pipe, The storage unit further stores a standby time, 4. The substrate processing apparatus according to claim 1, wherein the control unit controls the switching unit so that the processing liquid is discharged from the switching unit to the drainage pipe when the waiting time has elapsed since the recipe specified the third discharge destination as the discharge destination of the processing liquid.

11. The substrate processing apparatus according to claim 10 , wherein the waiting time is set in the recipe.

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