Device for generating dielectric barrier discharge and method for treating object to be activated

Abstract

To provide a device for generating a dielectric barrier discharge for treating an object to be activated with a non-thermal atmospheric pressure plasma.SOLUTION: A device includes a dielectric working chamber (2) having walls (3) made of a dielectric material and enclosing a working space (4), the working space (4) being an open volume, with a metallization (6) provided on the outer surface of the wall (3) facing away from the working space (4), and a high voltage source (9) designed to apply a high voltage to the metallization (6) or to the object (1) to be activated when the object (1) to be activated is placed in the working space (4). According to a further embodiment, the invention relates to a method for treating an object (1) to be activated with non-thermal atmospheric pressure plasma.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a dielectric barrier discharge generating device for treating an object to be activated with non-thermal atmospheric pressure plasma and a method for treating an object to be activated with non-thermal atmospheric pressure plasma. [Background technology]

[0002] The object to be activated may be, for example, an implant intended to be placed inside the human or animal body, but may also be any other object where a hydrophilic surface is desired.

[0003] For example, in the dental field, it is known that implants with hydrophilic properties significantly shorten the implantation period. Furthermore, hydrophilic implants have been shown to have significantly improved stability during the implantation process and better implantation behavior (osseointegration or bone bonding) compared to hydrophobic implants. Implants are typically made of materials with hydrophilic surfaces, such as titanium (grade 4) or zirconium oxide. However, organic impurities can hydrophobize the implant surface. These organic impurities can arise, for example, during implant manufacturing or storage. Hydrophilization of the surface should replace hydrocarbon groups resulting from organic surface contamination with hydrophilic OH groups. Because such hydrophilization is not long-term stable in air, it must be performed immediately before implant insertion. A short hydrophilization process is advantageous to minimize changes to the implant insertion workflow.

[0004] A method for hydrophilizing implants is known from WO 2015 / 087326 A1, in which plasma is ignited in a completely sealed container or package in which the implant is delivered. After the plasma process, the container is opened and the implant is implanted in the living environment. It is a significant effort for implant manufacturers to develop, approve and manufacture packages or containers that are sterile, sealed and compatible with plasma generators. Only implants from manufacturers using this packaging are compatible with the device. Therefore, the device cannot be used with all implants. Summary of the Invention

[0005] It is therefore an object of the present invention to provide an improved apparatus for plasma treatment of objects to be activated, which does not require, for example, a specific package for the objects to be activated.A further object is to provide an improved method for plasma treatment.

[0006] These problems are solved by a device according to claim 1 and a method according to the second independent claim.

[0007] An apparatus for generating a dielectric barrier discharge for treating an object to be activated with non-thermal atmospheric pressure plasma has been proposed. The apparatus comprises a dielectric working chamber and a high-voltage source. The dielectric working chamber has a wall made of a dielectric material that encloses an working space, and a metallization is provided on the outer surface of the wall facing away from the working space. The working space is an open volume. The high-voltage source is designed to apply a high voltage to the metallization or to the object to be activated.

[0008] An unencapsulated or unenclosed volume may be referred to herein as an "open volume." An open volume may be characterized by the fact that gas, e.g., air, can exit the volume and gas, e.g., air, from the environment can enter the volume. A volume that is not enclosed by a package or container may be referred to as an open volume.

[0009] The device can perform plasma treatment on any object that is sized to be introduced into the working chamber. The device is not limited to a specific implant, for example, placed in a specific package. The device can therefore be used universally. Since the working chamber is an open volume and allows for self-ignition of the plasma between the metallization and the object to be activated, there is no special requirement for encapsulation of the object to be activated. In fact, such encapsulation can be omitted.

[0010] The working space of a dielectrically active chamber is not a closed volume. Rather, the working space may have an inlet and an outlet to allow air flow through the working space. Alternatively, the working space may have only an inlet.

[0011] The metallization can be a metal layer that is bonded to the wall, or it can be separated from the wall by a gap with a small gap size. Furthermore, the metallization can be provided on the wall, for example, by a plug-in connection.

[0012] A wall made of a dielectric material separates the metallization from the object to be activated, and a high-voltage source is designed to apply a high voltage between the metallization and the object. Since the wall functions as a dielectric barrier, plasma can be reliably ignited between the metallization and the object to be activated by a dielectric barrier discharge. The metallization can function as an electrode. During the dielectric barrier discharge, the plasma is ignited mostly directly at the dielectric barrier. Not only the inner surface of the wall, but also the surface of the object to be activated can function as a dielectric barrier. Therefore, plasma can be ignited directly on the surface of the object to be activated. Accordingly, the plasma can activate and hydrophilize the surface of the object with high efficiency.

[0013] For the hydrophilization of an object, plasma ignition by dielectric barrier discharge offers several advantages: During a dielectric barrier discharge, a large portion of the plasma is ignited directly at the dielectric barrier. Correspondingly, a large portion of the plasma is ignited at the surface of the object, activating this surface. During a dielectric barrier discharge, plasma ignition takes place via a microdischarge distributed over a surface, so that the object can be activated uniformly over its entire surface. During a dielectric barrier discharge, oxygen species are generated that contribute to the hydrophilization of the surface of the object. During a dielectric barrier discharge, excessive local energy densities are not achieved, so that damage to the object to be activated can be avoided.

[0014] The treatment of the object to be activated can be carried out at atmospheric pressure. Atmospheric pressure can be present in the working chamber. Accordingly, pumping out the low-pressure chamber can be omitted. Accordingly, the equipment used can be made smaller, more mobile, and less expensive than devices based on devices with low-pressure chambers. Furthermore, the method can be carried out significantly faster, since the evacuation step of the low-pressure chamber, which usually takes several minutes, can be omitted. Furthermore, the plasma can be directly applied to the object to be activated, so the plasma treatment step can be significantly shortened.

[0015] Overall, the device allows for the rapid processing of objects to be activated, making it possible to integrate plasma treatment for hydrophilization into the workflow, and avoiding intermediate storage of the objects to be activated.

[0016] Furthermore, the device may have a receptacle designed to receive and move the object to be activated into the working chamber.

[0017] The device can be designed so that the object to be activated is in direct mechanical contact only with the receptacle, thus preventing contamination of the object by the walls of the dielectric chamber or the high voltage source.

[0018] The receptacle can be a mechanical element designed to grasp and hold the object to be activated, the receptacle can be designed to move the object to be activated along a defined path, or the receptacle can be designed to apply an electrical potential to the object to be activated.

[0019] The receptacle can be designed to move the object to be activated in a rotational and / or translational motion within the working space. The receptacle can be moved manually or mechanically driven, such as by a motor. By rotating and translating the object to be activated within the working space, the plasma can be applied uniformly to the object to be activated.

[0020] The object to be activated can be an implant, for example, a dental implant, which is treated with non-thermal atmospheric plasma prior to a medical treatment. Treating the implant with non-thermal atmospheric plasma improves its wettability with water and blood, thereby improving the implant's survival behavior. The plasma treatment of the implant is carried out prior to the medical treatment. This device allows the implant to be plasma-treated in a short time, meaning that the plasma treatment can be carried out immediately before the start of the medical treatment, eliminating the need for intermediate storage.

[0021] The high voltage source can be designed to create a dielectric barrier discharge between the object to be activated and the metallization.

[0022] The working space is preferably at atmospheric pressure. In an alternative embodiment, the pressure in the working space can be less than 1 atmosphere. Having the working space at atmospheric pressure has the advantage that the step of evacuating the working space can be omitted, allowing the processing to be carried out in a shorter time.

[0023] This device is designed to hydrophilize the surface of an object to be activated by treating it with non-thermal atmospheric pressure plasma.

[0024] The apparatus can have a base unit with an opening for receiving the dielectric chamber. All elements of the apparatus that are reusable, i.e., that can be used for multiple plasma treatments of different objects, can be located in the base unit. In particular, the high voltage source can be located in the base unit. The base unit can have a closed housing with an opening formed therein for receiving the dielectric chamber.

[0025] The dielectric action chamber can be designed to be inserted into the opening of the base unit before plasma processing and removed from the opening of the base unit after performing the plasma processing. Accordingly, the dielectric action chamber is a disposable item used for only one plasma processing. For each plasma processing, an appropriately configured dielectric action chamber can be selected. For example, the device can have a set of different dielectric action chambers that enable different plasma processing.

[0026] The wall of the dielectric working chamber includes a region located at the inlet of the dielectric working chamber and having a thickness greater than other regions. This region can form a collar. The inlet of the dielectric working chamber can be an opening in the dielectric working chamber through which an object to be activated can be introduced into the working space.

[0027] The thickened region serves several purposes: it supports the dielectric chamber on the base unit, thereby positioning the dielectric chamber at a predetermined position on the base unit; it can also form a support surface for the receptacle, thereby positioning the receptacle and the object to be activated held by the receptacle at a predetermined position relative to the dielectric chamber; and it can also provide isolation between the metallization and the receptacle.

[0028] The metallization can be a continuous sleeve-shaped metallization or can have several separate ring-shaped sections. A sleeve-shaped metallization allows for uniform plasma treatment of large implants, further reducing treatment times. A ring-shaped metallization has the advantage of low capacitance and therefore low parasitic loads between the electrode and the implant. It can also be seen that the electric field intensity at the edges of the ring-shaped metallization is particularly high. A further option is individual ring-shaped segments, whose extent is smaller than the dimensions of the object to be treated. In this case, the object to be treated can be moved relative to the ring-shaped segments so that the entire surface of the object to be treated can be fully plasma treated.

[0029] The high-voltage source can comprise a piezoelectric transformer. The high voltage can be tapped from the output side of the piezoelectric transformer via a mechanical contact and applied to the electrode or the object to be activated, or it can be transferred from the output area of ​​the piezoelectric transformer to the electrode or the object to be activated by a contactless spark gap. Piezoelectric transformers have the advantage, among other things, that they can be designed for mobile devices, since they can operate even with low input voltages, such as batteries.

[0030] The device may have a ventilation unit and / or a filter element. The ventilation unit and / or filter may be arranged in the base unit. The ventilation unit may be arranged to generate an air flow through the activation space, thereby cooling the object to be activated. This may be an ozone filter that can prevent excessive ozone concentration outside the base unit.

[0031] The working space can be filled with air, and the device can be designed to perform plasma treatment using air as the treatment gas, eliminating the need to use expensive specialty gases such as argon.

[0032] The dielectric working chamber can be a replaceable disposable item.

[0033] The inner diameter of the walls of the dielectric chamber can be between 4 mm and 7 mm. This inner diameter allows for the accommodation of a typical dental implant. The walls should not have an inner diameter larger than necessary to achieve the highest possible electric field strength within the tube. A field strength of at least 5 kV / mm is required within the tube to activate the surface of the object to be activated.

[0034] According to a further aspect, the present invention relates to a method for treating an object to be activated with a non-thermal atmospheric pressure plasma, the method comprising the steps of: - removing a dielectric working chamber from the sterile packaging, the dielectric working chamber having walls made of a dielectric material surrounding a working space, the walls having metallization on the outer surface facing away from the working space; - inserting a dielectric reaction chamber into an opening in the base unit, the base unit having a high voltage source; - introducing an object to be activated into the workspace; - applying a high voltage to the object or metallization to be activated, thereby generating a dielectric plasma discharge between the object and the metallization. The method takes less than 90 seconds, preferably less than 60 seconds, especially less than 30 seconds.

[0035] The working space can then be an open volume. The object to be activated can be removed from the sterile cover just before being placed in the working space. The object to be activated can be held in a receptacle and placed in the working space by means of the receptacle.

[0036] The method according to the second aspect may be carried out using the apparatus described above. [Brief explanation of the drawings]

[0037] The present invention will now be described with reference to the accompanying drawings. [Figure 1]FIG. 1 is a schematic diagram of an apparatus for generating a dielectric barrier discharge. [Figure 2] FIG. 2 shows the apparatus shown in FIG. 1 in more detail. [Figure 3] 3 shows a dielectric action chamber in a sterile package. [Figure 4] FIG. 4 shows an alternative embodiment of a dielectrically-acting chamber. [Figure 5] FIG. 5 shows an alternative embodiment of a dielectrically-acting chamber. [Figure 6] 6 to 9 show alternative embodiments of an apparatus for generating a dielectric barrier discharge. [Figure 7] FIG. 7 shows an alternative embodiment of an apparatus for generating a dielectric barrier discharge. [Figure 8] FIG. 8 shows an alternative embodiment of an apparatus for generating a dielectric barrier discharge. [Figure 9] FIG. 9 shows an alternative embodiment of an apparatus for generating a dielectric barrier discharge. [Figure 10] FIG. 10 shows an alternative embodiment of a dielectrically-acting chamber. DETAILED DESCRIPTION OF THE INVENTION

[0038] FIG. 1 shows a schematic diagram of an apparatus for generating a dielectric barrier discharge, designed to treat an object 1 to be activated with non-thermal atmospheric pressure plasma. The object 1 to be activated is an implant designed to be inserted into the human or animal body, in particular a dental implant. However, the apparatus is also designed to treat other objects with non-thermal atmospheric pressure plasma. For example, the object 1 to be activated may be made of titanium, in particular grade 4 titanium, or zirconium oxide. These materials are typically used for implants. Alternatively or additionally, the object 1 to be treated may comprise a metal, a plastic, or a ceramic.

[0039] Treatment with non-thermal atmospheric pressure plasma hydrophilizes the surface of the object 1. It is known that if the surface of an implant is hydrophilic, the implant survival time is significantly shortened and the implant survival (osseointegration or bone bonding) is significantly improved. In addition, the survival process of hydrophilic objects has improved stability.

[0040] The surface of pure titanium is hydrophilic and, accordingly, very wettable by water and blood. However, the surface can be rendered hydrophobic by organic impurities. Such impurities can arise, for example, during implant manufacturing or storage. By processing the implant in the apparatus shown in Figure 1, it is possible to ensure that the surface is hydrophilic immediately before the implant is inserted into the body. The good wettability of the implant with blood results in a short implantation period and a stable implantation process.

[0041] The device comprises a dielectric working chamber 2. The dielectric working chamber 2 has a wall 3 made of a dielectric material that surrounds an active space 4. The working space 4 is an open volume. In the embodiment shown in FIG. 1, the wall 3 is sleeve-shaped. The dielectric working chamber 2 has an inlet 2a through which the object 1 to be treated can be introduced into the working chamber 4, and an outlet 2b. The outlet 2b is located opposite the inlet 2a. An air flow can flow through the working chamber 4 from the inlet 2a to the outlet 2b.

[0042] The material of the wall 3 is chemically inert, which makes it possible to avoid chemical contamination of the object to be activated 1 during plasma treatment. The wall 3 may comprise, for example, quartz, glass or aluminum oxide.

[0043] The thickness D of the wall 3 is 0.5 mm or more and 3.0 mm or less, preferably 1.0 mm or more and 2.0 mm or less. For example, the wall thickness D can be 1.5 mm. Such a thickness D of the wall 3 allows the wall 3 to function as a dielectric barrier during plasma discharge. The thickness D indicates the distance between the inner surface 7 of the wall 3 and the outer surface 5 of the wall 3.

[0044] The wall 3 surrounds a working space 4. Atmospheric pressure can be present in the working chamber 4. With this device, it is not necessary to reduce the pressure in the working chamber 4 before plasma treatment. However, in an alternative embodiment of the device, the pressure in the working space 4 can be reduced so that the pressure therein is less than 1 atmosphere.

[0045] The working space 4 is filled with air. In an alternative embodiment, the working space 4 is filled with a different process gas.

[0046] The outer surface 5 facing away from the working space 4 can be partially or completely covered with a metallization 6. The metallization 6 forms an electrode. It consists of an electrically conductive material, for example copper or silver. The metallization 6 can be deposited by sputtering or electroplating. Further possibilities for depositing the metallization 6 are the use of an adhesive film, a metal hose pressed into a tube, or a conductive spray paint.

[0047] The metallization 6 completely surrounds the outer periphery of the cylindrical wall 3. The length L of the metallization 6 indicates the longitudinal extent of the metallization 6, which extends along the axis of symmetry of the cylindrical wall 3 of the dielectric chamber.

[0048] The length L of the metallization 6 should be adapted to the length of the workpiece 1. The length L of the metallization 6 is between 10 mm and 30 mm. For example, the length of the metallization 6 can be selected as 20 mm. A metallization 6 with such a length L is sufficient to completely surround a typical dental implant, thus ensuring that the entire implant is treated simultaneously. Furthermore, since plasma ignition occurs only between the electrode and the implant, the metallization 6 can be long. Alternatively, the length L of the metallization 6 can be selected to be much smaller than the length of the workpiece 1. In this case, the workpiece 1 must be moved longitudinally relative to the metallization 6 to ensure complete plasma treatment of the workpiece 1.

[0049] In the embodiment shown in Figure 1, the metallization 6 is connected to a high voltage source 9 via contacts 8. The high voltage source 9 is designed to generate a high voltage and apply it to the metallization 6. For example, the high voltage source 9 can be a piezoelectric transformer. The high voltage generated in the output area of ​​the piezoelectric transformer is taken off and applied to the metallization 6 via contacts 8. It is also possible to use alternative high voltage sources 9 that provide a high AC voltage.

[0050] The apparatus further includes a receptacle 10 for holding the object 1 to be treated and introducing it into the working space 4. The object 1 to be treated is connected to a reference potential, particularly a ground potential, via the receptacle 10. The receptacle 10 is designed to introduce the object 1 to be treated into the working space 4 with a linear movement. Furthermore, the receptacle 10 can be designed to linearly move the object 1 to be treated within the working space 4. For example, this can be vertical movement. Furthermore, the receptacle 10 can be designed to rotate the object 1 to be treated within the working space 4. The linear and rotational movement of the object 1 to be treated within the working space 4 ensures uniform plasma treatment of the surface of the object 1 to be treated.

[0051] The workpiece 1, to which a reference potential is applied via the receptacle 10, acts as a counter electrode during plasma discharge, the electrode being formed via the metallization 6 of the wall 3. The wall 3 acts as a dielectric barrier between the metallization 6 and the workpiece 1. Thus, plasma is ignited via a dielectric barrier discharge, whereby the plasma is generated directly on the surface of the workpiece 1.

[0052] The receptacle 10 can be a tool that is manually actuated or connected to a mechanical drive, such as a torque ratchet or wrench.

[0053] Figure 2 shows the device shown in Figure 1 in more detail. The device further comprises a base unit 11 having a housing 12 into which the dielectric action chamber 2 is inserted. The dielectric action chamber 2 is designed as a sterile replacement unit. It is inserted into the housing 12 immediately before plasma treatment. The base unit 11 has an opening into which the dielectric action chamber 2 is inserted.

[0054] The base unit 11 houses the high-voltage source 9 and, optionally, additional components. The base unit 11 also houses a control unit 13 for controlling the high-voltage source 9. The control unit 13 has an interface for user interaction, such as a display and function keys. The base unit 11 can also include a ventilation unit 14. The ventilation unit 14 can provide a constant airflow through the working chamber 2. This ensures that the workpiece 1 is cooled by the airflow and is prevented from overheating during plasma treatment. The base unit 11 can also include a filter 15 located between the dielectric working chamber 2 and the air outlet of the ventilation unit 14. The filter 15 can be specifically designed to filter ozone. Ozone is generated as a by-product during plasma treatment, and excessive concentrations can be harmful to health. The addition of the ozone filter 15 can prevent excessive ozone concentrations from building up outside the housing 12.

[0055] The components of the device that do not need to be replaced after each plasma treatment of the object to be activated 1 are permanently located in the base unit 11: the high voltage source 9, the control unit 13, the ventilation 14, the filter 15, etc.

[0056] Immediately before plasma processing, the dielectric reaction chamber 2 is loaded into the base unit 11. When the dielectric reaction chamber 2 is loaded into the opening of the base unit 11, the dielectric reaction chamber 2 is positioned so that the metallization portion 6 is in electrical contact with the high voltage source 9, so that the high voltage source 9 can apply a high voltage to the metallization portion 6. When the dielectric reaction chamber 2 is loaded into the base unit 11, the metallization portion 6 is connected to the contact 8.

[0057] The object 1 to be treated can then be introduced into the working chamber 4 by means of the receptacle 10. For this purpose, the object 1 to be treated is held by the receptacle 10 and inserted through the inlet 2a of the dielectric working chamber 2. Then, the plasma treatment is started, whereby the object 1 to be treated is moved by the receptacle 10 during the plasma treatment. The duration of the plasma treatment is less than 90 seconds, preferably less than 60 seconds, in particular less than 30 seconds.

[0058] After the plasma treatment, first the object 1 to be activated and then the dielectric chamber 2 are removed from the base unit 11. After the plasma treatment is finished, the object 1 to be activated is removed from the dielectric chamber 2 and the medical treatment, which may involve inserting an implant, can start immediately. No intermediate storage of the object 1 to be treated is necessary. Due to the short duration of the plasma treatment, the plasma treatment can be carried out immediately before the medical treatment, which involves inserting an implant.

[0059] The wall of the dielectric working chamber 2 has a region 16 in the region of the inlet 2a, the thickness of which is greater than the thickness of the wall 3 in the remaining region of the dielectric working chamber 2. Due to the thickened thickness, the region 16 forms a collar of the dielectric working chamber 2. The region 16 forms a support on which the dielectric working chamber 2 rests on the housing 12 when the dielectric working chamber 2 is placed in the opening of the base unit 11. This allows the dielectric working chamber 2 to be stably positioned on the base unit 11, thereby ensuring that the dielectric working chamber 2 is placed in a predetermined position. Furthermore, the thickened region 16 serves as a support for the receptacle 10 when the object 1 to be activated is loaded from the receptacle 10 into the working chamber 2. In this way, the object 1 to be activated is placed in a predetermined position in the working space 4. The thickened region 16 also serves to provide isolation between the metallization 6 and the receptacle 10. Additionally, the thickened region 16 provides a seal to the housing 12 such that little ozone escapes through the opening in the housing 12 into which the dielectrically active chamber 2 is inserted.

[0060] FIG. 3 shows the dielectric action chamber 2 in a sterile package 17. The dielectric action chamber 2 is used only once during plasma processing and is discarded after the plasma processing is performed. Before the next plasma processing, a new dielectric action chamber 2 is loaded into the base unit 11. In this way, it is possible to avoid the very costly cleaning of the high voltage source 9. The dielectric action chamber 2 is removed from the sterile package 17 immediately before being loaded into the base unit 11. In this way, it is possible to prevent the dielectric action chamber 2 from being contaminated.

[0061] Figure 4 shows an alternative embodiment of the dielectric working chamber 2. In the alternative embodiment shown in Figure 4, the wall 3 further has a bottom 18 that closes the outlet of the working chamber. This dielectric working chamber can also be installed in a housing.

[0062] FIG. 5 shows another alternative embodiment of the dielectric working chamber 2. In the embodiment shown in FIG. 5, an active substance 19 is additionally disposed at the bottom of the working chamber 2. The active substance 19 can be a process gas or a liquid. When the active substance 19 is supplied at a predetermined vapor pressure during a dielectric barrier discharge, new species with strong oxidizing or reducing properties are generated in the gas phase, or chemically reactive fragments are released, resulting in the generation of a rough, glassy layer on the object to be activated. For example, the active substance 19 can include water or hydrogen peroxide, which can cause oxidation during a dielectric barrier discharge. Alternatively or additionally, the active substance 19 can include hydrogen, which acts reductively during a dielectric barrier discharge. Alternatively or additionally, the active substance 19 can be an HMDSO or TEOS organosilicon compound applied by PECVD (plasma-enhanced chemical vapor deposition) and releases chemically reactive fragments.

[0063] The metallization 6 has a protrusion 6a that protrudes outward, allowing contact with the metallization 6. Furthermore, the metallization 6 is covered by an isolation 6b, and the protrusion 6a protrudes from the isolation 6b, so that it can be kept free from the isolation 6b. The isolation 6b protects the metallization 6. The protrusion 6a allows contact with the metallization 6 despite the isolation 6b. Furthermore, the working chamber 2 shown in the previous figure can have a metallization 6 with an outward protrusion 6a and an isolation 6b.

[0064] Figure 6 shows an alternative embodiment of the device. In the embodiment shown in Figure 6, the high voltage source 9, in this case a piezoelectric transformer, is not directly connected to the metallization 6 on the dielectrically active chamber 2 via wires or contacts 8. Instead, energy transfer between the high voltage source 9 and the metallization 6 is contactless, for example via an electrical discharge or spark gap.

[0065] 7 shows another alternative embodiment. In the embodiment shown in FIG. 7, the high voltage source 9 is not connected to the metallization 6 on the dielectric chamber 2, but to the workpiece 1. A high voltage is applied to the workpiece 1 accordingly. The metallization 6 on the dielectric chamber 2 is connected to a reference potential. As in the previous embodiment, a potential difference between the surface of the workpiece 1 and the metallization 6 causes a dielectric discharge and plasma ignition. The wall 3 of the dielectric chamber 2 also functions as a dielectric barrier here.

[0066] FIG. 8 shows a further example of an embodiment. In the embodiment shown in FIG. 8, several, for example three, piezoelectric transformers are arranged around the dielectric working chamber 2 as high-voltage sources 9. The piezoelectric transformers, as also shown in FIG. 5, operate in the open mode, i.e., energy transfer takes place via a spark gap or discharge. The use of several high-voltage sources 9 makes it possible to compensate for the energy losses that inevitably occur in contactless energy transfer. The object 1 to be activated rotates in the working space 4 during plasma treatment.

[0067] FIG. 9 shows another alternative embodiment, in which a first high-voltage source 9, which is a piezoelectric transformer, is arranged on the longitudinal side of the working chamber 2 and transfers energy to the metallization 6 without contact. Furthermore, a second high-voltage source, in particular a second piezoelectric transformer, is arranged below the bottom 18 of the dielectric working chamber 2. On the outer side of the bottom 18, opposite the working chamber 4, a metallization 6 is provided, to which the piezoelectric transformer transfers high voltage 9. This results in plasma ignition between the bottom 18 and the object 1 to be activated. Energy transfer between the second high-voltage source 9 and the metallization 6 of the bottom 18 is carried out without contact, i.e., via a discharge or spark gap. Alternatively, the second high-voltage source 9 can be electrically connected to the metallization 6 via contacts 8.

[0068] 10 shows a further embodiment of the dielectric chamber 2. In the embodiment shown in FIG. 10, the metallization 6 is not continuous but consists of a plurality of ring-shaped metallizations 6 separated from one another. Each ring of the metallization 6 can have a length ranging from 1 mm to 3 mm, for example, and between two rings there is a metallization 6-free area having a longitudinal extent of between 0.5 mm and 2.0 mm.

[0069] The ring-shaped design of the metallization 6 reduces the capacitance and thus the parasitic load. This reduces the device's power consumption and the reactive current flow. Furthermore, the electric field strength at the edge of the ring is particularly high, which allows for particularly efficient plasma treatment. Alternatively, it is possible to use only one ring as the metallization 6 and move the workpiece 1 sufficiently in the longitudinal direction so that its entire surface is treated. [Explanation of symbols]

[0070] 1. Objects / implants to be activated 2. Dielectric Interaction Chamber 2a entrance 2b exit 3 wall 4 Working space 5 External surface 6 Metallized part 6a Protrusion 6b Isolation 7 Inner surface 8. Contact 9 High Voltage Source 10 Receptacle 11 Base Unit 12 Housing 13 Control Unit 14 Ventilation section 15 filters 16 Areas / Colors 17 packages 18 Bottom 19 Active substances D wall thickness L length of metallized part

[0071] [Appendix 1] 1. An apparatus for generating a dielectric barrier discharge for treating an object to be activated with a non-thermal atmospheric pressure plasma, comprising: a dielectric working chamber having walls made of a dielectric material and enclosing a working space, the walls being provided with a metallization on an outer surface facing away from the working space, the working space being an open volume; a high voltage source designed to apply a high voltage to the metallization or to the object to be activated when the object to be activated is placed in the workspace; An apparatus comprising: [Appendix 2] a receptacle designed to receive and move the object to be activated into the workspace; 10. The apparatus of claim 1. [Appendix 3] the receptacle is designed to move the object to be activated in a rotational and / or translational movement within the working space; 10. The apparatus described in Appendix 2. [Appendix 4] The object to be activated is an implant to be treated with non-thermal atmospheric pressure plasma prior to a medical treatment. 4. The device of any one of claims 1 to 3. [Appendix 5] The high voltage source is designed to generate a dielectric barrier discharge between the object to be activated and the metallization. 5. The device of any one of claims 1 to 4. [Appendix 6] The working space is at atmospheric pressure or less than 1 atmosphere; 6. The device of any one of claims 1 to 5. [Appendix 7] The apparatus is designed to hydrophilize the surface of the object to be activated by the treatment with non-thermal atmospheric pressure plasma. 7. The apparatus of any one of claims 1 to 6. [Appendix 8] a base unit having an opening for receiving the dielectric reaction chamber; 8. The apparatus of any one of claims 1 to 7. [Appendix 9] The dielectric reaction chamber is designed to be inserted into the opening of the base unit before the plasma treatment and to be removed from the opening of the base unit after the plasma treatment is performed. 10. The apparatus of claim 8. [Appendix 10] the high voltage source is located in the base unit; 10. The device of claim 8 or 9. [Appendix 11] The wall of the dielectric chamber has a region having a thickness greater than other regions, the region being located at an inlet of the dielectric chamber. 11. The apparatus of any one of claims 1 to 10. [Appendix 12] the metallization is a continuous sleeve-like metallization or the metallization has separate ring-like sections; 12. The apparatus of any one of claims 1 to 11. [Appendix 13] the high voltage source comprises a piezoelectric transformer; 13. The apparatus of any one of claims 1 to 12. [Appendix 14] the device has a ventilation section and / or a filter; 14. The apparatus of any one of claims 1 to 13. [Appendix 15] The working space is filled with air. 15. The apparatus of any one of claims 1 to 14. [Appendix 16] The dielectric reaction chamber is a replaceable disposable item. 16. The apparatus of any one of claims 1 to 15. [Appendix 17] The inner diameter of the wall of the dielectric chamber is in the range of 4 mm to 7 mm. 17. The apparatus of any one of claims 1 to 16. [Appendix 18] the apparatus includes a plurality of high voltage sources; 18. The apparatus of any one of claims 1 to 17. [Appendix 19] 1. A method for treating an object to be activated with a non-thermal atmospheric pressure plasma, comprising: - removing a dielectric working chamber from a sterile package, the dielectric working chamber having walls made of a dielectric material surrounding a working space, the walls having metallization on their outer surfaces facing away from the working space; - inserting the dielectric reaction chamber into an opening in a base unit, the base unit having a high voltage source; - introducing the object to be activated into the workspace; - applying a high voltage to the object to be activated or to the metallization, thereby generating a dielectric plasma discharge between the object and the metallization; A method comprising: [Appendix 20] The process takes less than 20 seconds. The method described in Appendix 19.

Claims

[Claim 1] 1. An apparatus for generating a dielectric barrier discharge for treating an object to be activated with a non-thermal atmospheric pressure plasma, comprising: a dielectric working chamber having walls made of a dielectric material and enclosing a working space, the walls being provided with a metallization on the outer surface facing away from the working space, the working space being an open volume; a high-voltage source designed to apply a high voltage to the metallization or to the object to be activated when the object to be activated is placed in the working space; An apparatus comprising:

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