Method for detecting semiconductor defect using temperature difference contrast

Abstract

To provide a method for detecting a semiconductor defect that detects the presence or absence of the semiconductor defect in a nondestructive manner.SOLUTION: A method for detecting a semiconductor defect using temperature difference contrast, comprises the steps of: acquiring an image of a first surface or a second surface of a standard semiconductor; heating a part or all of the first surface of a target semiconductor by a heat source; stopping a heating of the part or all of the first surface of the target semiconductor by the heat source; acquiring an image of the first surface or the second surface of the target semiconductor by a thermal camera; acquiring an image of the first surface or the second surface of the standard semiconductor by a detection unit; and determining, by the detection unit, the presence or the absence of a defect in the target semiconductor by comparing the image of the first surface or the second surface of the standard semiconductor with the image of the first surface or the second surface of the target semiconductor. In a state where the target semiconductor is not destroyed, the presence or the absence of the defect in the target semiconductor can be detected by the temperature difference contrast.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a semiconductor detection method, and more particularly to a semiconductor defect detection method using temperature difference contrast. [Background technology]

[0002] A semiconductor is a substance or material whose electrical conductivity lies between that of a metal conductor and that of an insulator. Currently, the method for detecting defects in semiconductors involves sampling a batch of semiconductors, destroying the target semiconductor by slicing, and then inspecting the bonding accuracy using a scanning electron microscope to determine whether the target semiconductor has defects.

[0003] However, currently, there is no method for detecting the presence or absence of defects in a semiconductor without destroying the semiconductor. Summary of the Invention [Problem to be solved by the invention]

[0004] A primary object of the present invention is to provide a semiconductor defect detection method using temperature difference contrast, which can detect the presence or absence of defects in a target semiconductor using the contrast of temperature difference while the target semiconductor is not destroyed. [Means for solving the problem]

[0005] In order to achieve the above-mentioned object, the present invention provides a semiconductor defect detection method using temperature difference contrast, comprising the steps of: acquiring an image of a first surface or a second surface of a standard semiconductor; heating part or all of the first surface of a target semiconductor with a heat source and causing part or all of the first surface of the target semiconductor to absorb heat from the heat source; stopping the heating of part or all of the first surface of the target semiconductor with the heat source and diffusing the heat from part or all of the first surface of the target semiconductor towards part or all of the second surface of the target semiconductor; acquiring an image of the first or second surface of the target semiconductor by sensing the temperature of part or all of the first surface or the temperature of part or all of the second surface of the target semiconductor with a thermal camera; receiving the image of the first or second surface of the standard semiconductor and the image of the first or second surface of the target semiconductor with a detection unit and determining whether or not there is a defect in the target semiconductor by comparing the grayscales of the image of the first or second surface of the standard semiconductor and the image of the first or second surface of the target semiconductor.

[0006] In some embodiments, the step of acquiring an image of the first surface or the second surface of the standard semiconductor further includes heating part or all of the first surface of the standard semiconductor with the heat source and causing part or all of the first surface of the standard semiconductor to absorb heat from the heat source; stopping the heating of part or all of the first surface of the standard semiconductor with the heat source and causing the heat from part or all of the first surface of the standard semiconductor to diffuse toward part or all of the second surface of the standard semiconductor; and acquiring an image of the first surface or the second surface of the standard semiconductor by sensing the temperature of part or all of the first surface or the temperature of part or all of the second surface of the standard semiconductor with the thermal camera.

[0007] In some embodiments, the step of sensing the temperature of part or all of the first surface or part or all of the second surface of the standard semiconductor with the thermal camera further comprises sensing a change in temperature of part or all of the first surface of the standard semiconductor or a change in temperature of part or all of the second surface of the standard semiconductor by continuously capturing images of part or all of the first surface of the standard semiconductor or images of part or all of the second surface of the standard semiconductor with the thermal camera.

[0008] In some embodiments, the step of determining whether or not the target semiconductor has a defect further includes determining, by the detection unit, that the target semiconductor has a defect in which at least one wire is open by detecting that the grayscale of at least one dot-like region in the image of the first surface of the target semiconductor is darker or the grayscale of at least one dot-like region in the image of the second surface of the target semiconductor is lighter than the image of the first surface or the second surface of the standard semiconductor.

[0009] In some embodiments, the step of determining whether or not the target semiconductor has a defect further includes determining, by the detection unit, that the target semiconductor has a defect such as at least one wire error or assembly misalignment by detecting that at least one dot-like area is reduced in grayscale in the image of the first surface of the target semiconductor or at least one dot-like area is reduced in grayscale in the image of the second surface of the target semiconductor compared to the image of the first surface or the second surface of the standard semiconductor.

[0010] In some embodiments, the step of determining whether or not the target semiconductor has a defect further includes determining, by the detection unit, that the target semiconductor has a defect such as at least one faulty wire or misaligned assembly by detecting that at least one dot-like area is increased in the grayscale of the image of the first surface of the target semiconductor or at least one dot-like area is increased in the grayscale of the image of the second surface of the target semiconductor compared to the image of the first surface or the second surface of the standard semiconductor.

[0011] In some embodiments, the step of determining whether the target semiconductor has a defect further includes determining, by the detection unit, that the target semiconductor has a defect in which materials other than wires are destroyed or material proportions are incorrect by detecting that the grayscale of at least one block region in the image of the first surface of the target semiconductor is darker or the grayscale of at least one block region in the image of the second surface of the target semiconductor is lighter than the image of the first surface or the second surface of the standard semiconductor.

[0012] In some embodiments, the step of sensing the temperature of part or all of the first surface or part or all of the second surface of the target semiconductor with the thermal camera further includes sensing a temperature change of part or all of the first surface of the target semiconductor or a temperature change of part or all of the second surface of the target semiconductor by continuously capturing images of part or all of the first surface of the target semiconductor or images of part or all of the second surface of the target semiconductor with the thermal camera.

[0013] In some embodiments, the heat source heats for less than 0.1 seconds and to a temperature greater than 50°C.

[0014] In some embodiments, the heat source is an area light source or a point light source. [Effects of the Invention]

[0015] The effect of the present invention is that the method of the present invention makes it possible to detect the presence or absence of defects in a target semiconductor by contrasting the temperature difference, without the target semiconductor being destroyed. [Brief explanation of the drawings]

[0016] [Figure 1] 1 is a flowchart of a first embodiment of the method according to the present invention. [Figure 2] FIG. 2 is a schematic diagram of steps S10 to S30 of a first embodiment of a method according to the present invention. [Figure 3] FIG. 2 is a schematic diagram of steps S40 to S60 of a first embodiment of the method according to the present invention. [Figure 4] 1 is an image of a first surface of a standard die of a first embodiment of a method according to the invention; [Figure 5] 1 is an image of a first surface of a target die of a first embodiment of a method according to the present invention; [Figure 6] 2 is a schematic diagram of the connection relationship between the thermal camera and the detection unit in the method according to the present invention; FIG. [Figure 7] 10 is an image of a first surface of a standard die for a second embodiment of the method according to the invention; [Figure 8] 10 is an image of a first surface of a target die of a second embodiment of the method according to the present invention; [Figure 9] 10 is an image of a first surface of a standard die for a third embodiment of the method according to the invention; [Figure 10] 10 is an image of a first surface of a target die of a third embodiment of the method according to the present invention; [Figure 11] FIG. 10 is a schematic diagram of steps S10 to S30 of a fourth embodiment of the method according to the present invention. [Figure 12] FIG. 10 is a schematic diagram of steps S40 to S60 of a fourth embodiment of the method according to the present invention. [Figure 13] 5 is a flowchart of a fifth embodiment of the method according to the invention. [Figure 14] FIG. 10 is a schematic diagram of a first cycle from step S10 to step S30 of a fifth embodiment of the method according to the present invention. [Figure 15]FIG. 10 is a schematic diagram of a first cycle from step S40 to step S60 of a fifth embodiment of the method according to the invention. [Figure 16] FIG. 10 is a schematic diagram of a second cycle from step S10 to step S30 of a fifth embodiment of the method according to the present invention. [Figure 17] FIG. 10 is a schematic diagram of a second cycle from step S40 to step S60 of a fifth embodiment of the method according to the invention. [Figure 18] FIG. 10 is a schematic diagram of a third cycle from step S10 to step S30 of a fifth embodiment of the method according to the present invention. [Figure 19] FIG. 10 is a schematic diagram of a third cycle from step S40 to step S60 of a fifth embodiment of the method according to the present invention. [Figure 20] FIG. 10 is a schematic diagram of a fourth cycle from step S10 to step S30 of a fifth embodiment of the method according to the present invention. [Figure 21] FIG. 10 is a schematic diagram of a fourth cycle from step S40 to step S60 of a fifth embodiment of the method according to the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0017] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in more detail in conjunction with the drawings and reference numerals so that those skilled in the art can read and practice the present specification.

[0018] The present invention provides a method for detecting defects in semiconductors by temperature difference contrast, which includes the following steps.

[0019] 1 and 2, in step S10, heat source 10 is a surface light source 11 that is an infrared heater, and infrared rays are projected by the infrared heater toward first ends 211, 221 of multiple wires 21, 22 of standard die 20 (the entire first surface of the standard semiconductor), heating these first ends 211, 221 of wires 21, 22 with the infrared rays and causing these first ends 211, 221 of wires 21, 22 to absorb the infrared heat. The infrared heater is preferably a near-infrared heater or a short-wave far-infrared heater.

[0020] In step S20, as shown in Figures 1 and 2, the infrared heater stops projecting infrared rays toward the first ends 211, 221 of these wires 21, 22, stopping the infrared heater from heating the first ends 211, 221 of these wires 21, 22, and diffusing the heat at the first ends 211, 221 of these wires 21, 22 toward the second ends 212, 222 of these wires 21, 22 (the entire second surface of the standard semiconductor).

[0021] In step S30, an image of the first surface of the standard die 20 is obtained by sensing the temperatures of the first ends 211, 221 of these wires 21, 22 with a thermal camera 30, as shown in FIGS.

[0022] In step S40, as shown in Figures 1 and 3, an infrared heater projects infrared rays toward the first ends 411, 421 of the multiple wires 41, 42 of the target die 40 (the entire first surface of the target semiconductor), heating the first ends 411, 421 of these wires 41, 42 with the infrared rays and causing the first ends 411, 421 of these wires 41, 42 to absorb the heat of the infrared rays.

[0023] In step S50, as shown in Figures 1 and 3, the infrared heater stops projecting infrared rays toward the first ends 411, 421 of these wires 41, 42, stopping the infrared heater from heating the first ends 411, 421 of these wires 41, 42, and diffusing the heat at the first ends 411, 421 of these wires 41, 42 toward the second ends 412, 422 of these wires 41, 42 (the entire second surface of the target semiconductor).

[0024] In step S60, an image of the first surface of the target die 40 is obtained by sensing the temperatures of the first ends 411, 421 of these wires 41, 42 with the thermal camera 30, as shown in FIGS.

[0025] 1, 4, 5, and 6, the detection unit 50 receives an image of the first surface of the standard die 20 and an image of the first surface of the target die 40, and compares the grayscales of the image of the first surface of the standard die 20 and the image of the first surface of the target die 40. If the detection unit 50 detects that the grayscale of the image of the first end 421 of the wire 42 (a dot-like region on the first surface of the target semiconductor) is darker than that of the image of the first surface of the standard die 20, this indicates that the temperature of the first end 421 of the wire 42 is higher than the temperature of the first end 411 of the other wires 41. This determines that the target die 40 has a defect in which the wire 42 is broken.

[0026] Preferably, step S30 further includes sensing temperature changes at the first ends 211, 221 of the wires 21, 22 by continuously capturing images of the first ends 211, 221 of the wires 21, 22 with a thermal camera 30.

[0027] Preferably, step S60 further includes sensing temperature changes at the first ends 411, 421 of the wires 41, 42 by continuously capturing images of the first ends 411, 421 of the wires 41, 42 with the thermal camera 30.

[0028] The thermal camera 30 is preferably an infrared thermal camera.

[0029] The heating time of the heat source 10 is preferably less than 0.1 seconds, and the heating temperature is preferably above 50° C. In other words, the heat source 10 can be used to instantaneously heat to a high temperature in a short time to achieve the detection purpose.

[0030] The second embodiment differs from the first embodiment in that in step S70, as shown in Figures 7 and 8, the detection unit 50 detects that the dot area corresponding to the dot area 23 in the grayscale of the image of the first surface of the target die 40A has decreased and the dot area 43 has increased in comparison with the image of the first surface of the standard die 20A, thereby determining that the target die 40A has a defect such as an incorrect wire or misaligned assembly.

[0031] The difference between the third embodiment and the first embodiment is that in step S70, as shown in Figures 9 and 10, the detection unit 50 detects that the grayscale of the block area 44 in the image of the first surface of the target die 40B is darker than that in the image of the first surface of the standard die 20B, thereby determining that the target die 40B has a defect such as destruction of materials other than the wire or an incorrect material ratio.

[0032] The fourth embodiment differs from the first embodiment in that, first, in step S30, an image of the second surface of the standard die 20 is obtained by sensing the temperature of the second ends 212, 222 of these wires 21, 22 using a thermal camera 30, as shown in FIG. 11; and second, in step S60, an image of the second surface of the target die 40 is obtained by sensing the temperature of the second ends 412, 422 of these wires 41, 42 using a thermal camera 30, as shown in FIG. 12.

[0033] Preferably, step S30 further includes sensing temperature changes at the second ends 212, 222 of the wires 21, 22 by continuously capturing images of the second ends 212, 222 of the wires 21, 22 with a thermal camera 30.

[0034] Preferably, step S60 further includes sensing temperature changes at the second ends 412, 422 of the wires 41, 42 by continuously capturing images of the second ends 412, 422 of the wires 41, 42 with the thermal camera 30.

[0035] In some embodiments, the area light source 11 is a laser heater.

[0036] The fifth embodiment differs from the first embodiment in the following ways.

[0037] In the first cycle, as shown in Figures 13, 14 and 15, in step S10, the heat source 10 is a point light source 12 including an infrared heater 121 and a convex lens 122, and the infrared heater 121 projects infrared rays toward the convex lens 122, and the convex lens 122 focuses the infrared rays and irradiates them onto a first end 211 (a part of the first surface of the standard semiconductor) of one of these wires 21, heating the first end 211 of one of these wires 21 with the infrared rays and causing the first end 211 of one of these wires 21 to absorb the heat of the infrared rays.

[0038] In step S20, the infrared heater 121 stops projecting infrared rays toward the convex lens 122, the convex lens 122 stops focusing the infrared rays and irradiating them on the first end 211 of one of these wires 21, the infrared heater 121 and the convex lens 122 stop heating the first end 211 of one of these wires 21, and the heat at the first end 211 of one of these wires 21 is diffused toward the second end 212 of one of these wires 21 (a part of the second surface of the standard semiconductor).

[0039] In step S30, the temperature of the first end 211 of one of these wires 21 is sensed by the thermal camera 30. In step S40, the infrared heater 121 projects infrared rays toward the convex lens 122, which focuses the infrared rays and irradiates the first end 411 of one of these wires 41 (a part of the first surface of the target semiconductor), heating the first end 411 of one of these wires 41 with the infrared rays and causing the first end 411 of one of these wires 41 to absorb the heat of the infrared rays.

[0040] In step S50, the infrared heater 121 stops projecting infrared rays toward the convex lens 122, the convex lens 122 stops focusing the infrared rays and irradiating them on the first end 411 of one of these wires 41, the infrared heater 121 and the convex lens 122 stop heating the first end 411 of one of these wires 41, and the heat at the first end 411 of one of these wires 41 is diffused toward the second end 412 (a part of the second surface of the standard semiconductor) of one of these wires 41. In step S60, the thermal camera 30 senses the temperature of the first end 211 of one of these wires 21.

[0041] 13, 16, and 17, the second cycle differs from the first cycle in that in step S10, infrared light is focused by the convex lens 122 and irradiated onto the first end 221 of the wire 22 (a part of the first surface of the standard semiconductor), the first end 221 of the wire 22 is heated by the infrared light, and the first end 221 of the wire 22 absorbs the heat of the infrared light; in step S20, the focusing of infrared light by the convex lens 122 and the irradiation onto the first end 221 of the wire 22 are stopped, heating of the first end 221 of the wire 22 by the infrared heater 121 and the convex lens 122 is stopped, and the heat at the first end 221 of the wire 22 is diffused in the direction of the second end 222 of the wire 22 (a part of the second surface of the standard semiconductor); and in step S30, the thermal camera 30 captures the infrared light. In step S40, the convex lens 122 focuses infrared light and irradiates it onto the first end 421 of the wire 42 (a part of the first surface of the target semiconductor), heating the first end 421 of the wire 42 with the infrared light and causing the first end 421 of the wire 42 to absorb the infrared heat; in step S50, the convex lens 122 stops focusing the infrared light and irradiating it onto the first end 421 of the wire 42, causing the infrared heater 121 and the convex lens 122 to stop heating the first end 421 of the wire 42 and diffusing the heat at the first end 421 of the wire 42 toward the second end 422 of the wire 42 (a part of the second surface of the target semiconductor); and in step S60, the thermal camera 30 senses the temperature of the first end 421 of the wire 42.

[0042] 13, 18, and 19, the third cycle differs from the first cycle in that in step S10, infrared light is focused by the convex lens 122 and irradiated onto the other first ends 211 of the wires 21 (parts of the first surface of the standard semiconductor), the other first ends 211 of the wires 21 are heated by the infrared light, and the heat of the infrared light is absorbed by the other first ends 211 of the wires 21; in step S20, the focusing of infrared light by the convex lens 122 and the irradiation onto the other first ends 211 of the wires 21 are stopped, heating of the other first ends 211 of the wires 21 by the infrared heater 121 and the convex lens 122 is stopped, and the heat at the other first ends 211 of the wires 21 is diffused in the direction of the other first ends 212 of the wires 21 (parts of the second surface of the standard semiconductor); and in step S30, the other first ends 212 of the wires 21 are imaged by the thermal camera 30. The temperature of the other first ends 211 of the wires 41 is sensed; in step S40, infrared rays are focused by the convex lens 122 and irradiated onto the other first ends 411 of the wires 41 (part of the first surface of the target semiconductor), the other first ends 411 of the wires 41 are heated by the infrared rays, and the other first ends 411 of the wires 41 absorb the infrared heat; in step S50, the focusing of infrared rays by the convex lens 122 and the irradiation onto the other first ends 411 of the wires 41 is stopped, heating of the other first ends 411 of the wires 41 by the infrared heater 121 and the convex lens 122 is stopped, and the heat at the other first ends 411 of the wires 41 is diffused toward the other second ends 412 of the wires 41 (part of the second surface of the target semiconductor); and in step S60, the temperature of the other first ends 411 of the wires 41 is sensed by the thermal camera 30.

[0043] In the fourth cycle, as shown in Figures 13, 20 and 21, the difference from the first cycle is that in step S10, infrared rays are focused by a convex lens 122 and irradiated onto the other first ends 211 of these wires 21 (part of the first surface of the standard semiconductor), the other first ends 211 of these wires 21 are heated by the infrared rays, and the other first ends 211 of these wires 21 absorb the heat of the infrared rays.

[0044] In step S20, the convex lens 122 stops focusing the infrared light onto the other first ends 211 of these wires 21, the infrared heater 121 and the convex lens 122 stop heating the other first ends 211 of these wires 21, and the heat at the other first ends 211 of these wires 21 is diffused toward the other first ends 212 of these wires 21 (part of the second surface of the standard semiconductor).

[0045] In step S30, the temperature of the other first ends 211 of these wires 21 is sensed by the thermal camera 30. In step S40, infrared light is focused by the convex lens 122 and irradiated onto the other first ends 411 (part of the first surface of the standard semiconductor) of these wires 41, causing the other first ends 411 of these wires 41 to heat with the infrared light and to absorb the heat of the infrared light.

[0046] In step S50, the convex lens 122 stops focusing the infrared light onto the other first ends 411 of the wires 41, the infrared heater 121 and the convex lens 122 stop heating the other first ends 411 of the wires 41, and the heat at the other first ends 411 of the wires 41 is diffused toward the other second ends 412 (part of the second surface of the target semiconductor) of the wires 41. In step S60, the thermal camera 30 senses the temperature of the other first ends 411 of the wires 41.

[0047] After collecting the temperatures of the first ends 211, 221 of these wires 21, 22 and the temperatures of the first ends 411, 421 of these wires 41, 42 using the thermal camera 30, an image of the first surface of the standard die 20 and an image of the first surface of the target die 40 are obtained. Finally, by performing step S70, it is determined that the target die 40 has a defect in which the wire 22 is broken.

[0048] In some embodiments, the point light source 12 is a laser heater.

[0049] As described above, the method of the present invention can detect the presence or absence of defects in a target semiconductor by the contrast of temperature differences, without the target semiconductor being destroyed.

[0050] The above-mentioned are only preferred embodiments for explaining the present invention, and are not intended to impose any formal limitations on the present invention. Therefore, any modifications or changes made to the present invention under the same inventive concept should be included in the intended scope of protection of the present invention. [Explanation of symbols]

[0051] 10 Heat source 11 surface light source 12 point light source 121 Infrared heater 122 Convex Lens 20, 20A, 20B standard die 21, 22 wires 211, 221 1st end 212, 222 2nd end 23 Point area 30 Thermal Camera 40, 40A, 40B target die 41, 42 Wire 411, 421 1st end 412, 422 2nd end 43 Point area 44 Block Area 50 detection units S10~S70 process

Claims

1. A semiconductor defect detection method using temperature difference contrast, comprising: acquiring an image of a first surface or a second surface of a standard semiconductor; heating a part or all of a first surface of the target semiconductor with a heat source and allowing a part or all of the first surface of the target semiconductor to absorb heat from the heat source; ceasing the heating of the heat source to a part or all of the first surface of the target semiconductor and diffusing the heat from the part or all of the first surface of the target semiconductor toward a part or all of the second surface of the target semiconductor; capturing an image of the first or second surface of the target semiconductor by sensing the temperature of a portion of or all of the first surface or a portion of or all of the second surface of the target semiconductor with a thermal camera; receiving an image of the first surface or the second surface of the standard semiconductor and an image of the first surface or the second surface of the target semiconductor by a detection unit, and determining whether or not there is a defect in the target semiconductor by comparing the grayscales of the image of the first surface or the second surface of the standard semiconductor and the image of the first surface or the second surface of the target semiconductor; A method for detecting defects in semiconductors using temperature contrast.

2. In the step of acquiring an image of the first surface or the second surface of the standard semiconductor, a part or all of the first surface of the standard semiconductor is heated by the heat source, and the part or all of the first surface of the standard semiconductor is allowed to absorb heat from the heat source; ceasing the heating of a part or all of the first surface of the standard semiconductor by the heat source and diffusing the heat from the part or all of the first surface of the standard semiconductor toward the part or all of the second surface of the standard semiconductor; and capturing an image of the first surface or the second surface of the standard semiconductor by sensing the temperature of a part or all of the first surface or a part or all of the second surface of the standard semiconductor with the thermal camera.

2. The method for detecting defects in semiconductors using temperature difference contrast according to claim 1.

3. In the step of sensing the temperature of a part or all of the first surface or the temperature of a part or all of the second surface of the standard semiconductor by the thermal camera, and sensing temperature changes of a portion of or all of the first surface of the standard semiconductor or a portion of or all of the second surface of the standard semiconductor by continuously capturing images of a portion of or all of the first surface of the standard semiconductor or images of a portion of or all of the second surface of the standard semiconductor with the thermal camera.

3. The method for detecting defects in semiconductors using temperature difference contrast according to claim 2.

4. In the step of determining whether or not there is a defect in the target semiconductor, and determining, by the detection unit, that the gray scale of at least one dot-like region in the image of the first surface of the target semiconductor is darker or the gray scale of at least one dot-like region in the image of the second surface of the target semiconductor is lighter than the image of the first surface or the second surface of the standard semiconductor, thereby determining that the target semiconductor has a defect in which at least one wire is broken.

4. The semiconductor defect detection method using temperature difference contrast according to claim 1.

5. In the step of determining whether or not there is a defect in the target semiconductor, and determining, by the detection unit, that the target semiconductor has a defect such as at least one wire error or assembly misalignment by detecting that at least one dot-like region is reduced in gray scale in the image of the first surface of the target semiconductor or at least one dot-like region is reduced in gray scale in the image of the second surface of the target semiconductor compared to the image of the first surface or the second surface of the standard semiconductor.

4. The semiconductor defect detection method using temperature difference contrast according to claim 1.

6. In the step of determining whether or not there is a defect in the target semiconductor, and determining, by the detection unit, that the target semiconductor has a defect such as at least one faulty wire or misaligned assembly by detecting that the gray scale of the image of the first surface of the target semiconductor is increased by at least one dot-like area or the gray scale of the image of the second surface of the target semiconductor is increased by at least one dot-like area compared to the image of the first surface or the second surface of the standard semiconductor.

4. The semiconductor defect detection method using temperature difference contrast according to claim 1.

7. In the step of determining whether or not there is a defect in the target semiconductor, and determining, by the detection unit, that the gray scale of at least one block region in the image of the first surface of the target semiconductor is darker or the gray scale of at least one block region in the image of the second surface of the target semiconductor is lighter than the image of the first surface or the second surface of the standard semiconductor, that the target semiconductor has a defect in which a material other than a wire is broken or a material ratio is incorrect.

4. The semiconductor defect detection method using temperature difference contrast according to claim 1.

8. In the step of sensing the temperature of a part or all of the first surface or a part or all of the second surface of the target semiconductor by the thermal camera, and further comprising sensing a temperature change of a part or all of the first surface of the target semiconductor or a temperature change of a part or all of the second surface of the target semiconductor by continuously capturing images of a part or all of the first surface of the target semiconductor or an image of a part or all of the second surface of the target semiconductor with the thermal camera.

4. The semiconductor defect detection method using temperature difference contrast according to claim 1.

9. The heating time of the heat source is less than 0.1 seconds, and the heating temperature is greater than 50°C; 4. The semiconductor defect detection method using temperature difference contrast according to claim 1.

10. The heat source is a surface light source or a point light source.

4. The semiconductor defect detection method using temperature difference contrast according to claim 1.

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