Sensor element, method of manufacturing the same, and sensor array

Abstract

To provide a sensor element capable of improving sensor characteristics.SOLUTION: A sensor element provided herein comprises a substrate 11, a channel layer 14 provided on the substrate 11, a first electrode 16 provided on the substrate 11 and electrically connected to the channel layer 14, a second electrode 18 provided on the substrate 11 and electrically connected to the channel layer 14, a gate electrode 24 provided on the substrate 11, a receptive layer 26 provided on the channel layer 14 and configured to be capable of capturing a target substance, and a partition part 30 for separating the channel layer 14 from the gate electrode 24 on the substrate 11.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a sensor element, a manufacturing method thereof, and a sensor array. [Background technology]

[0002] BACKGROUND ART Field effect transistors (FETs) having an atomic layer-like channel layer such as graphene are known as sensor elements used in biosensors and the like.

[0003] In a sensor element, when a target substance is captured by a receptor layer provided on a channel layer, the potential of the channel layer changes. Therefore, the target substance can be detected based on the current flowing through the channel layer. It is known to provide unevenness under an electrode electrically connected to the channel layer (for example, Patent Document 1). Summary of the Invention [Problem to be solved by the invention]

[0004] When forming the receptive layer on the channel layer, if part of the material of the receptive layer adheres to the surface of the gate electrode, the gate potential of the channel layer may become non-uniform. Furthermore, the sensor characteristics may deteriorate with repeated measurements or may change over time. In this way, the sensor characteristics deteriorate.

[0005] An object of the present disclosure is to provide a sensor element capable of improving sensor characteristics, a manufacturing method thereof, and a sensor array. [Means for solving the problem]

[0006] According to an embodiment of the present disclosure, a sensor element includes a substrate, a channel layer provided on the substrate, a first electrode provided on the substrate and electrically connected to the channel layer, a second electrode provided on the substrate and electrically connected to the channel layer, a gate electrode provided on the substrate, a receptor layer provided on the channel layer and capable of capturing a target substance, and a partition portion on the substrate that separates the channel layer from the gate electrode.

[0007] According to an embodiment of the present disclosure, a method for manufacturing a sensor element includes the steps of: preparing a transistor including a substrate, a channel layer provided on the substrate, a first electrode provided on the substrate and electrically connected to the channel layer, a second electrode provided on the substrate and electrically connected to the channel layer, and a gate electrode provided on the substrate; and contacting the channel layer with a solution containing a material that will become a receptor layer capable of capturing a target substance, and forming the receptor layer on the channel layer without contacting the solution on the gate electrode. [Effects of the Invention]

[0008] According to the present disclosure, it is possible to provide a sensor element capable of improving sensor characteristics, a method for manufacturing the same, and a sensor array. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1(a) is a cross-sectional view showing a manufacturing process of a sensor element according to a first embodiment of the present invention, FIG. 1(b) is a cross-sectional view showing a state in which the sensor element according to the first embodiment of the present invention is used, and FIG. 1(c) is a plan view of the sensor element according to the first embodiment of the present invention. [Figure 2] FIG. 2 is a flowchart showing a method for manufacturing and using the sensor element according to the first embodiment of the present invention. [Figure 3] FIG. 3 is a cross-sectional view of a sensor element according to Modification 1 of the first embodiment of the present invention. [Figure 4]Figure 4(a) is a cross-sectional view showing a manufacturing process of a sensor element according to variant 2 of the first embodiment of the present invention, Figure 4(b) is a cross-sectional view showing a state in which the sensor element according to variant 2 of the first embodiment of the present invention is in use, and Figure 4(c) is a plan view of the sensor element according to variant 2 of the first embodiment of the present invention. [Figure 5] FIG. 5(a) is a cross-sectional view showing a manufacturing process of a sensor element according to a third modification of the first embodiment of the present invention, and FIG. 5(b) is a cross-sectional view showing a state in which the sensor element according to the third modification of the first embodiment of the present invention is used. [Figure 6] FIG. 6(a) is a cross-sectional view showing a manufacturing process of a sensor element according to a fourth modification of the first embodiment of the present invention, and FIG. 6(b) is a cross-sectional view showing a state in which the sensor element according to the fourth modification of the first embodiment of the present invention is used. [Figure 7] FIG. 7(a) is a cross-sectional view showing a manufacturing process of a sensor element according to the fifth modification of the first embodiment of the present invention, and FIG. 7(b) is a cross-sectional view showing a state in which the sensor element according to the fifth modification of the first embodiment of the present invention is used. [Figure 8] FIG. 8(a) is a cross-sectional view showing a state in which the sensor element according to the second embodiment of the present invention is used, and FIG. 8(b) is a cross-sectional view showing a method for manufacturing the sensor element according to the second embodiment of the present invention. [Figure 9] FIG. 9 is a flowchart showing a method for manufacturing and using a sensor element according to the second embodiment of the present invention. [Figure 10] FIG. 10(a) is a cross-sectional view showing a manufacturing method of a sensor element according to a first modified example of the second embodiment of the present invention, and FIG. 10(b) is a cross-sectional view showing a state in which the first modified example of the second embodiment of the present invention is used. [Figure 11] Fig. 11(a) is a cross-sectional view showing a manufacturing process of a sensor element according to Modification 2 of the second embodiment of the present invention, and Fig. 11(b) is a cross-sectional view showing a manufacturing process of a sensor element according to Modification 3 of the second embodiment of the present invention. [Figure 12] FIG. 12(a) is a cross-sectional view showing a manufacturing process of a sensor array according to a third embodiment of the present invention, and FIG. 12(b) is a cross-sectional view showing a state in which the sensor array according to the third embodiment of the present invention is used. [Figure 13]FIG. 13 is a plan view showing a sensor array according to a first modification of the third embodiment of the present invention. [Figure 14] FIG. 14 is a plan view showing a sensor array according to a second modification of the third embodiment of the present invention. [Figure 15] FIG. 15 is a plan view showing a sensor array according to a third modification of the third embodiment of the present invention. [Figure 16] FIG. 16 is a plan view showing a sensor array according to a fourth modification of the third embodiment of the present invention. [Figure 17] FIG. 17 is a plan view showing a sensor array according to a fifth modification of the third embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The following embodiments are examples for embodying the technical ideas of the invention, and the present invention is not limited to the described configurations and numerical values. In each drawing, the same components are given the same reference numerals, and duplicated explanations may be omitted as appropriate. The size, positional relationship, etc. of each component shown in each drawing may be exaggerated to facilitate understanding of the invention.

[0011] (First embodiment) The first embodiment and its modifications are examples of a sensor element. Fig. 1(a) is a cross-sectional view showing a manufacturing process of the sensor element according to the first embodiment of the present invention, Fig. 1(b) is a cross-sectional view showing the sensor element according to the first embodiment of the present invention in use, and Fig. 1(c) is a plan view of the sensor element according to the first embodiment of the present invention. Figs. 1(a) and 1(b) correspond to the AA cross section of Fig. 1(c). The thickness direction of the substrate 11 is the Z direction, the arrangement direction of the electrodes 16 and 18 is the X direction, and the direction perpendicular to the X and Z directions is the Y direction.

[0012] As shown in Figures 1(a) to 1(c), the sensor element 100 according to the first embodiment includes a substrate 11, an insulating layer 20, a channel layer 14, electrodes 16, 18, wiring 17, 19, a gate electrode 24, a receiving layer 26, a partition portion 30, and a dam portion 32.

[0013] The base material 11 has a substrate 10 and an insulating layer 12. The insulating layer 12 is provided on the substrate 10. If the substrate 10 is an insulating substrate, the insulating layer 12 may not be provided. In this case, the base material 11 is the substrate 10. The channel layer 14 is provided on the base material 11 and has an atomic layer material. The electrodes 16 and 18 are electrically connected to the channel layer 14. The electrodes 16 and 18 are provided on the base material 11 so as to sandwich the channel layer 14 in the X direction. The electrodes 16 and 18 correspond to a source electrode and a drain electrode, respectively. The channel layer 14 and the electrodes 16 and 18 form a sensor unit 50.

[0014] The wirings 17 and 19 are provided on the substrate 11 and electrically connected to the electrodes 16 and 18, respectively. The wirings 17 and 19 electrically connect the electrodes 16 and 18 to pads or the like. The gate electrode 24 is provided on the insulating layer 12. The channel layer 14, the electrodes 16 and 18, and the gate electrode 24 form a transistor 52.

[0015] The insulating layer 20 is provided on the substrate 11 so as to cover the channel layer 14, the electrodes 16, 18, the wirings 17, 19, and the gate electrode 24. The insulating layer 20 has openings 21 and 22. The opening 21 is provided on the channel layer 14. The receiving layer 26 is provided on the channel layer 14 within the opening 21. The receiving layer 26 is a capture body such as a probe molecule. The upper surface of the gate electrode 24 is exposed from the opening 22.

[0016] The dam section 32 is provided on the substrate 11 so as to seamlessly surround the sensor section 50 and the gate electrode 24. The partition section 30 is provided on the substrate 11 so as to seamlessly separate the sensor section 50 and the gate electrode 24. A height H0 of the partition section 30 from the substrate 11 is smaller than a height H2 of the dam section 32 from the substrate 11.

[0017] 5(b), when the sensor element 100 is used, the dam portion 32 holds a solution 36. The solution 36 is in contact with the receptive layer 26 and the gate electrode 24. The solution 36 contains a target substance 38 and a substance 37 other than the target substance.

[0018] Applying a voltage to the gate electrode 24 forms an electric double layer between the channel layer 14 and the gate electrode 24, allowing the Fermi level or Dirac point in the channel layer 14 to be constant. In this state, when a voltage Vds is applied between the electrodes 16 and 18, carriers such as electrons flow from the electrode 16 to the electrode 18 via the channel layer 14. When a target substance 38 is captured in the receptor layer 26, the potential of the channel layer 14 changes, causing a change in the current (drain current Ids) flowing between the electrodes 16 and 18. The current changes depending on the number of target substances 38 captured in the receptor layer 26. The concentration of the target substance 38 can be detected by measuring the current value.

[0019] For example, when the channel layer 14 is made of graphene, the voltage Vgs is swept and the current Ids is measured. The voltage Vgs at which the current Ids is minimum is the voltage VDirac at the Dirac point, and the concentration of the target substance 38 in the solution 36 can be detected based on the value of the voltage VDirac.

[0020] The substrate 10 may be a semiconductor substrate such as a silicon (Si) substrate, gallium arsenide (GaAs), or indium phosphide (InP), an insulating substrate such as glass, or a conductive substrate such as a metal substrate. The substrate 10 may also be a flexible resin substrate such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or polyimide-silicon elastomeric material (PDMS). When a flexible substrate is used as the substrate 10, the sensor element 100 can be placed on a curved surface. For example, the sensor element 100 can be attached to the human body. In this configuration, the sensor element 100 can be placed in close contact with the body. The sensor element 100 may potentially be capable of sensing gases such as body odor and bodily fluids such as sweat or tears in real time.

[0021] There are no particular limitations on the insulating layers 12 and 20 as long as they are insulating films. The insulating layers 12 and 20 are inorganic insulators such as silicon dioxide (SiO2), aluminum oxide (Al2O3), silicon nitride (SiN), hafnium oxide (HfO2), titanium oxide (TiO2), or tantalum oxide (Ta2O5). The insulating layer 12 may be an organic insulator such as spin-on-glass (SOG) or a fluorine-based resin. The insulating layer 12 may also be a laminate film of the above layers.

[0022] The insulating layer 20 covers the electrode 16 or 18, thereby suppressing leakage current between the electrode 16 or 18 and the gate electrode 24. In order to prevent the channel layer 14 from being affected when the target substance 38 or other substances 37 are adsorbed onto the insulating layer 20, the thickness of the insulating layer 20 is preferably greater than the thickness (i.e., the Debye length) of the electric double layer formed by the solution 36 on the channel layer 14. From these viewpoints, the thickness of the insulating layer 20 is preferably 10 μm or more.

[0023] When the insulating layers 12 and 20 are made of an inorganic insulator, they are formed by, for example, a chemical vapor deposition (CVD) method, a physical vapor deposition (PVD) method such as a sputtering method or an evaporation method, or an atomic layer deposition (ALD) method. When the insulating layers 12 and 20 are made of an organic insulator, they are formed by, for example, a spin coating method, a screen printing method, an offset printing method, a ravia printing method, or an inkjet method.

[0024] The atomic layer material of the channel layer 14 is a two-dimensional material such as graphene or a transition metal dichalcogenide (TMDC) such as molybdenum disulfide (MoS), a one-dimensional material such as a carbon nanotube (CNT) or a silicon nanowire, or a material in which one-dimensional materials are connected in a network form.

[0025] In atomic layered materials, the current changes sensitively with changes in the surface state (surface potential state). Therefore, by using an atomic layered material for the channel layer 14, the detection sensitivity of the target substance 38 can be improved. The channel layer 14 has one or more atomic layers. As the number of atomic layers increases, the sensitivity decreases. From this perspective, the number of atomic layers in the channel layer 14, including a turbostratic structure, is preferably 10 or less.

[0026] The carrier mobility of graphene at room temperature is 200,000 cm 2 / Vs, which is very high. Therefore, by using graphene as the atomic layer material, the detection sensitivity of the sensor element 100 can be increased.

[0027] The electrodes 16 and 18 are made of, for example, palladium (Pd), platinum (Pt), silver (Ag), gold (Au), nickel (Ni), titanium (Ti), chromium (Cr), or aluminum (Al), or a laminate film thereof. Palladium and platinum have low contact resistance with graphene, while titanium and chromium have good adhesion with the insulating layers 12 and 20. The wirings 17 and 19 may be the same metal layer as the electrodes 16 and 18, or may be a different metal layer from the electrodes 16 and 18.

[0028] The receptor layer 26 is a substance that specifically binds to or adsorbs to a target substance 38 in a solution 36, but does not easily bind to or adsorb to other substances 37. The material of the receptor layer 26 is appropriately selected depending on the target substance 38. For example, if the target substance 38 is a molecule, the receptor layer 26 is a molecular template corresponding to the target substance 38. If the target substance 38 is an ion, the receptor layer 26 is an ionophore corresponding to the target substance 38.

[0029] When the target substance 38 is an antigen such as a hormone, the receptor layer 26 is an antibody corresponding to the protein. When the target substance 38 is a nucleic acid molecule such as DNA (Deoxyribonucleic Acid) or (RNA: Ribonucleic acid), the receptor layer 26 is a nucleic acid aptamer such as DNA or RNA corresponding to the target substance 38. When the target substance 38 is an amino acid, a protein, or the like, the receptor layer 26 is a peptide aptamer corresponding to the target substance 38, or the like.

[0030] The receptor layer 26 may be formed as two layers of two different substances. For example, if the receptor layer 26 is an antibody or aptamer that does not have a six-membered carbon ring structure, the antibody or aptamer cannot be directly formed on the graphene of the channel layer 14. For this reason, 1-pyrenebutanoic acid or succinimidyl ester (PBASE) may be used as an adhesive (linker). For example, the pyrene at the bottom of PBASE has four six-membered rings and bonds to graphene through van der Waals forces. The succinimidyl ester group at the top of PBASE is easily detached, and a glycopeptide is amide-bonded to the detached site. This allows glycopeptides to be attached to graphene.

[0031] When sensing in a liquid, the solution 36 is not particularly limited as long as it is a liquid that can form an electric double layer. To ensure the stability of the characteristics of the sensor element 100, the solution 36 preferably contains phosphate buffered saline (PBS) or the like that can maintain a constant pH. The solution 36 may also be a bodily fluid such as saliva, sweat, tears, urine, blood, or plasma.

[0032] For example, when the sensor element 100A senses hormone balance from saliva, blood, urine, tears, or sweat, the target substance 38 may be estrone, estradiol, estriol, progesterone, testosterone, DHT (dihydrotestosterone), androstenedione, androsterone, cortisol (hydrocortisone), serotonin, dopamine, oxytocin, adrenaline, noradrenaline, melatonin, or erythropoietin. By sensing these hormones, the sensor element 100A can visualize stress, happiness, and the like.

[0033] The dam portion 32 and the partition portion 30 are made of an insulating material such as rubber or resin. The rubber is, for example, silicone rubber containing polydimethylsiloxane (PDMS: dimethylpolysiloxane). The resin is, for example, ABS (Acrylonitrile Butadiene Styrene) resin, PLA (Poly Lactic Acid) resin, ASA (Acrylate Styrene Acrylonitrile) resin, PP (Polypropylene) resin, PET (Polyethylene Terephthalate) resin, PMMA (Polymethylmethacrylate) resin, PC (Polycarbonate) resin, PA (Polyamide) resin, nylon resin, photocurable resin, wax resin, or the like.

[0034] The gate electrode 24 may be made of any material as long as it can be electrically connected to the channel layer 14 via the solution 36. The gate electrode 24 may be made of the same material as the electrodes 16 and 18. The gate electrode 24 is preferably a silver-silver chloride electrode (Ag / AgCl), a calomel electrode, a palladium-hydrogen electrode (Pd / H2), or the like. This improves the stability and reproducibility of the electrode potential.

[0035] 2 is a flowchart showing a method for manufacturing and using a sensor element according to the first embodiment of the present invention. As shown in FIG. 2, a transistor 52 is prepared in which a channel layer 14, electrodes 16, 18, and a gate electrode 24 are provided on a substrate 11 (step S10). Next, a dam portion 32 and a partition portion 30 are formed on the substrate 11 (step S11).

[0036] 1(a), after the dam portion 32 and the partition portion 30 are in close contact with the substrate 11, a solution 34 is introduced onto the sensor portion 50 between the dam portion 32 and the partition portion 30 (step S12). The upper surface of the solution 34 is set lower than the height H0 of the partition portion 30. This allows the solution 34 to come into contact with the channel layer 14 in the opening 21 and form a receptor layer 26 on the channel layer 14. The partition portion 30 prevents the solution 34 from coming into contact with the gate electrode 24. The dam portion 32 and the partition portion 30 hold the solution 34 and allow it to remain there for a certain period of time.

[0037] The solution 34 does not contain the target substance 38, but does contain a substance that will become at least a part of the receiving layer 26. The solution 34 contains, for example, water or an organic solvent as a solvent. Examples of the organic solvent that can be used include alcohols, ketones, esters, ethers, aliphatic hydrocarbons, and aromatic hydrocarbons. The substance in the solution 34 forms the receiving layer 26 on the channel layer 14.

[0038] Next, the solution 34 is removed from inside the dam portion 32 (step S13). When forming multiple types of receiving layers 26 on the channel layer 14, steps S12 and S13 are repeated. In this way, the sensor element 100 according to the first embodiment is manufactured.

[0039] 1(b), the user introduces a solution 36 containing a target substance 38 into the dam portion 32 (step S16). The solution 36 comes into contact with the receptor layer 26 and the gate electrode 24. By applying a voltage to the gate electrode 24, a gate potential can be supplied to the channel layer 14 via the solution 36. The user detects the target substance 38 using the sensor element 100.

[0040] According to the first embodiment, the channel layer 14, the electrode 16 (first electrode), the electrode 18 (second electrode), the gate electrode 24, and the receiving layer 26 are provided on the substrate 11. The partition 30 separates the channel layer 14 from the gate electrode 24 on the substrate 11.

[0041] 2, as shown in FIG. 1(a), it is possible to prevent the material of the receiving layer 26 from adhering to the surface of the gate electrode 24. This prevents the gate potential of the channel layer 14 from becoming non-uniform. This prevents the sensor characteristics from deteriorating during repeated measurements or from changing over time. In this way, it is possible to prevent the sensor characteristics from deteriorating.

[0042] As shown in FIG. 1(c), the partition 30 and the dam 32 form a region including the channel layer 14 and a region including the gate electrode 24 when viewed in the thickness direction of the substrate 11. As shown in FIGS. 1(a) and 1(b), the height H0 of the partition 30 is lower than the height H2 of the dam 32. As a result, by making the upper surface of the solution 34 lower than the height H0 of the partition 30 as shown in FIG. 1(a), the solution 34 can be brought into contact with the channel layer 14 but not the gate electrode 24. Furthermore, by making the upper surface of the solution 36 higher than the height H0 of the partition 30 and lower than the height H2 of the dam 32 as shown in FIG. 1(b), the solution 36 can be brought into contact with the channel layer 14 and the gate electrode 24.

[0043] The height H2 of the dam portion 32 is, for example, 1 mm or more and about 5 mm. From the viewpoint of preventing the solution 34 from contacting the gate electrode 24, the height H0 of the partition portion 30 is preferably 1 / 5 or more, and more preferably 1 / 4 or more, of the height H2. From the viewpoint of preventing the solution 36 from flowing out of the dam portion 32, the height H0 is preferably 4 / 5 or less, and more preferably 3 / 4 or less, of the height H2. The thickness of the dam portion 32 and the partition portion 30 is, for example, 1 mm or more and about 2 mm.

[0044] (Modification 1 of the first embodiment) 3 is a cross-sectional view of a sensor element according to Modification 1 of the first embodiment of the present invention. As shown in FIG. 3, the sensor element 101 according to Modification 1 of the first embodiment includes a coating layer 39. The coating layer 39 is provided in the area of ​​the dam section 32 and the partition section 30 where the solutions 36 and 34 come into contact. The coating layer 39 prevents a part of the material of the receptor layer 26 or the target substance 38 from adhering to the surfaces of the dam section 32 and the partition section 30. The coating layer 39 also prevents air bubbles and the like from adhering to the surfaces of the dam section 32 and the partition section 30.

[0045] The coating layer 39 is an inorganic insulating film such as an aluminum oxide film, a silicon oxide film, a hafnium oxide film, a tantalum oxide film, a titanium oxide film, or a silicon nitride film, or a laminate film thereof. From the viewpoint of suppressing adhesion of air bubbles to the surfaces of the dam portion 32 and the partition portion 30, the coating layer 39 may be made of a material containing a hydroxyl group, such as Si—OH. The other configurations are the same as those in the first embodiment, and therefore description thereof will be omitted.

[0046] In the first, second, and third embodiments and their modified examples, a coating layer 39 may be provided on the surfaces of the dam portion 32 and the partition portion 30.

[0047] (Modification 2 of the first embodiment) Fig. 4(a) is a cross-sectional view showing a manufacturing process of a sensor element according to Modification 2 of the first embodiment of the present invention, Fig. 4(b) is a cross-sectional view showing a state in which the sensor element according to Modification 2 of the first embodiment of the present invention is used, and Fig. 4(c) is a plan view of the sensor element according to Modification 2 of the first embodiment of the present invention. Figs. 4(a) and 4(b) correspond to the cross section AA of Fig. 4(c). In the plan view, the partition portion is illustrated by seeing through the ceiling portion 35.

[0048] As shown in FIGS. 4(a) to 4(c), the sensor element 102 according to the second modification of the first embodiment includes a ceiling portion 35. The ceiling portion 35 is in contact with the dam portion 32 and is provided above the spaces 54a and 54b partitioned by the partition portion 30. The ceiling portion 35 has openings 35a and 35b that connect to the space 54a, and an opening 35c that connects to the space 54b. The partition portion 30 is provided with a recessed portion 30b that connects the spaces 54a and 54b. The upper surface of the partition portion 30 other than the recessed portion 30b is in contact with the ceiling portion 35. The ceiling portion 35 is formed, for example, from the materials exemplified for the dam portion 32 and the partition portion 30. The other configurations are the same as those of the first embodiment, and therefore description thereof will be omitted.

[0049] When manufacturing the sensor element 102 of the second modification of the first embodiment, in step S11 of FIG. 2, the solution 34 is introduced into the space 54a through the opening 35a as indicated by the arrow 60a in FIG. 4(a), and the solution 34 is discharged through the opening 35b as indicated by the arrow 60b. The upper surface of the solution 34 is lower than the bottom surface of the recess 30b. This allows the solution 34 to contact the channel layer 14 but not the gate electrode 24.

[0050] When using the sensor element 102 of the second modification of the first embodiment, in step S16 of FIG. 2, the solution 36 is introduced into the space 54b from the opening 35c, as indicated by the arrow 62c in FIG. 4(b). The top surface of the solution 36 is made higher than the bottom surface of the recess 30b. This allows the solution 36 to be introduced into the space 54b through the recess 30b. The solution 36 is then discharged from the opening 35b, as indicated by the arrow 62b. The solution 36 comes into contact with the channel layer 14 and the gate electrode 24. By applying a voltage to the gate electrode 24, a gate potential can be supplied to the channel layer 14 via the solution 36. The user uses the sensor element 102 to detect the target substance 38.

[0051] As in the second modification of the first embodiment, it is sufficient that at least a part of the partition portion 30 is lower than the lowest upper surface of the dam portion 32.

[0052] (Modification 3 of the first embodiment) FIG. 5(a) is a cross-sectional view showing a manufacturing process of a sensor element according to a third modification of the first embodiment of the present invention, and FIG. 5(b) is a cross-sectional view showing a state in which the sensor element according to the third modification of the first embodiment of the present invention is used.

[0053] 5(a) and 5(b), the sensor element 103 according to the third modification of the first embodiment does not include a dam portion 32. The upper surface of the partition portion 30 is inclined so that the height decreases toward the receiving layer 26. The other configurations are the same as those of the first embodiment, and therefore a description thereof will be omitted.

[0054] When manufacturing the sensor element 103 of the third modification of the first embodiment, in step S11 of FIG. 2, the solution 34 is dropped onto the upper surface of the partition 30 as shown in FIG. 5(a). Due to surface tension, the upper surface of the solution 34 becomes a part of a sphere. This allows the solution 34 to come into contact with and be held by the channel layer 14. By increasing the width of the partition 30, the solution 34 can be prevented from coming into contact with the gate electrode 24.

[0055] When using the sensor element 103 of the third modification of the first embodiment, in step S16 of FIG. 2, the solution 36 is dropped so that it covers the partition portion 30 and comes into contact with the channel layer 14 and the gate electrode 24, as shown in FIG. 5(b). By applying a voltage to the gate electrode 24, a gate potential can be supplied to the channel layer 14 via the solution 36. A user uses the sensor element 104 to detect a target substance 38.

[0056] As in the third modification of the first embodiment, the dam portion 32 does not have to be provided. In this case, the partition portion 30 is provided so as to block all straight lines connecting the channel layer 14 and the gate electrode 24.

[0057] Increasing the distance between the channel layer 14 and the gate electrode 24 reduces the possibility that the solution 36 will adhere to the gate electrode 24. On the other hand, the resistance from the gate electrode 24 to the channel layer 14 via the solution 36 increases. This makes it difficult to control the current flowing between the electrodes 16 and 18, resulting in increased noise.

[0058] Reducing the distance between the channel layer 14 and the gate electrode 24 reduces the resistance from the gate electrode 24 to the channel layer 14 via the solution 36, reducing noise. On the other hand, it increases the possibility that the solution 36 will adhere to the gate electrode 24. The width of the partition 30 is determined taking these factors into consideration.

[0059] (Fourth modification of the first embodiment) FIG. 6(a) is a cross-sectional view showing a manufacturing process of a sensor element according to a fourth modification of the first embodiment of the present invention, and FIG. 6(b) is a cross-sectional view showing a state in which the sensor element according to the fourth modification of the first embodiment of the present invention is used.

[0060] As shown in FIGS. 6(a) and 6(b), the sensor element 104 according to the fourth modification of the first embodiment includes an opening / closing unit 57. The opening / closing unit 57 opens and closes the opening 30a provided in the partition unit 30. The opening / closing unit 57 is, for example, a gate valve, and is made of the materials exemplified for the dam unit 32 and the partition unit 30. The opening / closing unit 57 is not limited to a gate valve. The other configurations are the same as those of the first embodiment, and therefore description thereof will be omitted.

[0061] When manufacturing the sensor element 104 of the fourth modification of the first embodiment, in step S11 of FIG. 2, the opening 30a is closed by the opening / closing unit 57 as shown in FIG. 6(a). Then, the solution 34 is introduced onto the sensor unit 50. Because the opening 30a is closed, the solution 34 can be brought into contact with the channel layer 14 but not with the gate electrode 24.

[0062] When using the sensor element 104 of the fourth modification of the first embodiment, in step S16 of FIG. 2, the opening / closing unit 57 opens the opening 30a as shown in FIG. 6(b). Then, a solution 36 is introduced onto the sensor unit 50 and the gate electrode 24. The solution 36 comes into contact with the channel layer 14 and the gate electrode 24. By applying a voltage to the gate electrode 24, a gate potential can be supplied to the channel layer 14 via the solution 36. The user uses the sensor element 104 to detect a target substance 38.

[0063] According to the fourth modification of the first embodiment, the opening / closing section 57 can open and close at least a part of the partition section 30. This makes it possible to prevent the solution 34 from coming into contact with the gate electrode 24, as shown in FIG.

[0064] (Fifth Modification of the First Embodiment) FIG. 7(a) is a cross-sectional view showing a manufacturing process of a sensor element according to the fifth modification of the first embodiment of the present invention, and FIG. 7(b) is a cross-sectional view showing a state in which the sensor element according to the fifth modification of the first embodiment of the present invention is used.

[0065] As shown in FIGS. 7(a) and 7(b), the sensor element 105 according to the fifth modification of the first embodiment includes a blocking portion 58. The blocking portion 58 moves on the partition portion 30, and can block the space 54a in which the sensor portion 50 is provided from the space 54b in which the gate electrode 24 is provided. The blocking portion 58 is, for example, a shutter, and is made of the materials exemplified for the dam portion 32 and the partition portion 30. The blocking portion 58 is not limited to a shutter. The other configurations are the same as those of the first embodiment, and therefore description thereof will be omitted.

[0066] When manufacturing the sensor element 105 of the fifth modification of the first embodiment, in step S11 of FIG. 2, the blocking portion 58 closes the space 54b as shown in FIG. 7(a). This blocks the space 54b from the space 54a. Thereafter, the solution 34 is introduced onto the sensor portion 50. Because the blocking portion 58 blocks the space 54b, the solution 34 can be brought into contact with the channel layer 14 but not with the gate electrode 24.

[0067] When using the sensor element 105 of the fifth modification of the first embodiment, in step S16 of FIG. 2, the blocking unit 58 opens the spaces 54a and 54b as shown in FIG. 7(b). Then, the solution 36 is introduced onto the sensor unit 50 and the gate electrode 24. The solution 36 comes into contact with the channel layer 14 and the gate electrode 24. By applying a voltage to the gate electrode 24, a gate potential can be supplied to the channel layer 14 via the solution 36. The user uses the sensor element 105 to detect the target substance 38.

[0068] According to the fifth modification of the first embodiment, the blocking portion 58 can block the space 54a including the channel layer 14 from the space 54b including the gate electrode 24. This can prevent the solution 34 from contacting the gate electrode 24, as shown in FIG. 7(a). Note that the spaces 54a and 54b do not need to be completely sealed off, as long as they can prevent the solution 34 from adhering to the gate electrode 24.

[0069] In the first embodiment and its modified examples, it is not necessary to remove the dam portion for the solution 34, as in the second embodiment and its modified examples described below. This makes it possible to prevent unintended damage to the sensor unit 50 due to removal of the dam portion.

[0070] (Second embodiment) The second embodiment and its modifications are examples of methods for manufacturing a sensor element. Fig. 8(a) is a cross-sectional view showing a state in which the sensor element according to the second embodiment of the present invention is used, and Fig. 8(b) is a cross-sectional view showing a method for manufacturing the sensor element according to the second embodiment of the present invention. Fig. 9 is a flowchart showing a method for manufacturing and using the sensor element according to the second embodiment of the present invention.

[0071] As shown in Figures 8(a) and 8(b), the sensor element 106 according to the second embodiment does not include a partition portion. The other configurations are the same as those of the first embodiment, and therefore a description thereof will be omitted.

[0072] As shown in FIG. 9, after the transistor 52 is prepared in step S10, the dam portion 31 is formed on the substrate 11 (step S11A).

[0073] As shown in FIG. 8(a), the sensor element 100A includes a dam portion 31. The dam portion 31 is provided on the insulating layer 12 so as to surround the sensor portion 50 without any gap. The dam portion 31 does not surround the gate electrode 24. The dam portion 31 is made of the same material as the dam portion 32, for example.

[0074] Next, after dam portion 31 is brought into close contact with substrate 11, solution 34 is introduced into dam portion 31 (step S12). Dam portion 32 holds solution 34, allowing solution 34 to remain in opening 21 for a certain period of time. As a result, receptor layer 26 is formed on channel layer 14.

[0075] Next, the solution 34 is removed from inside the dam portion 31 (step S13). When forming multiple types of receptor layers on the channel layer 14, steps S12 and S13 are repeated. Next, the dam portion 32 is formed on the substrate 11 (step S15). The dam portion 32 is formed so as to surround the sensor portion 50 and the gate electrode 24. The sensor element 100 according to the second embodiment is manufactured by adhering the dam portion 32 to the substrate 11.

[0076] 8(b), the user removes part or all of the portion of the dam portion 31 located between the sensor portion 50 and the gate electrode 24 to form the dam portion 32 (steps S14 and S15). Then, a solution 36 containing a target substance 38 is introduced into the dam portion 32 (step S16). The solution 36 comes into contact with the receptor layer 26 and the gate electrode 24. By applying a voltage to the gate electrode 24, a gate potential can be supplied to the channel layer 14 via the solution 36. The user detects the target substance 38 using the sensor element 106.

[0077] According to the second embodiment, as in step S10, a transistor 52 is prepared in which a channel layer 14, an electrode 16 (first electrode), an electrode 18 (second electrode), and a gate electrode 24 are provided on a substrate 11. As in step S12 and FIG. 1(b), a solution 34 containing a material that will become a receptor layer 26 capable of capturing a target substance 38 is brought into contact with the channel layer 14 to form the receptor layer 26 on the channel layer 14 without bringing the solution 34 into contact with the gate electrode 24.

[0078] This prevents the material of the receiving layer 26 from adhering to the surface of the gate electrode 24. This prevents the gate potential of the channel layer 14 from becoming non-uniform. This prevents the sensor characteristics from deteriorating during repeated measurements or from changing over time. In this way, the deterioration of the sensor characteristics can be prevented.

[0079] As in step S11A, a dam portion 31 (first dam portion) is formed on the substrate 11 to surround the channel layer 14 but not the gate electrode 24. As in step S12, a solution 34 containing a material that will become the reception layer 26 is introduced into the dam portion 31. As in step S14, the dam portion 31 is removed. As in step S15, a dam portion 32 (second dam portion) is formed on the substrate 11 to surround the channel layer 14 and the gate electrode 25. This makes it possible to prevent the solution 34 from adhering to the gate electrode 24. The other configurations are the same as those in the first embodiment, and therefore description thereof will be omitted.

[0080] (Modification 1 of the second embodiment) FIG. 10(a) is a cross-sectional view showing a manufacturing method of a sensor element according to a first modified example of the second embodiment of the present invention, and FIG. 10(b) is a cross-sectional view showing a state in which the first modified example of the second embodiment of the present invention is used.

[0081] In step S11A of Fig. 9, a dam portion 31 is formed on the substrate 11. As shown in Fig. 10(a), a sensor element 107A according to the first modification of the second embodiment includes the dam portion 31. The dam portion 31 surrounds the sensor portion 50 when viewed from the Z direction and covers the upper part of the sensor portion 50. Openings 31a and 31b are provided in the side wall of the dam portion 31. Pipes 40a and 40b are connected to the openings 31a and 31b, respectively.

[0082] 9, as indicated by arrow 60a, solution 34 is introduced from pipe 40a through opening 31a into dam portion 31. As indicated by arrow 60b, solution 34 is discharged from opening 31b through pipe 40b.

[0083] Since the dam portion 31 is not open, even when the solvent of the solution 34 is a volatile organic solvent such as methanol, ethanol, acetone, or DMF (N,N-Dimethylformamide), it is possible to prevent the evaporated solvent from unintentionally adhering to the gate electrode 24, etc.

[0084] In step S14, the dam portion 31 is removed. In step S15, the dam portion 32 is formed on the substrate 11. In this way, the sensor element 107 according to the first modification of the second embodiment is manufactured.

[0085] 10(b), the sensor element 107 according to the first modification of the second embodiment includes a dam portion 32. The dam portion 32 surrounds the sensor portion 50 and the gate electrode 24 when viewed from the Z direction, and covers the upper portions of the sensor portion 50 and the gate electrode 24. Openings 32a and 32b are provided in the sidewall of the dam portion 32. Pipes 42a and 42b are connected to the openings 32a and 32b, respectively.

[0086] When the sensor element 107 according to the first modification of the second embodiment is used, in step S16 of Fig. 9, the solution 36 is introduced from the tube 42a through the opening 32a into the dam portion 32, as indicated by an arrow 62a. The solution 36 is discharged from the opening 32b through the tube 42b, as indicated by an arrow 62b.

[0087] Since the dam portion 32 is not opened, evaporation of the solution 36 can be suppressed. This suppresses fluctuations in the concentration of the target substance 38 in the solution 36. This suppresses changes in the sensor characteristics over time. The other configurations are the same as those of the second embodiment, and therefore a description thereof will be omitted.

[0088] (Modification 2 of the second embodiment) FIG. 11(a) is a cross-sectional view showing a manufacturing process of a sensor element according to Modification 2 of the second embodiment of the present invention.

[0089] As shown in FIG. 11(a), in the sensor element 108A of the second modification of the second embodiment, instead of forming the dam portion 31 in step S11A of FIG. 10, a blocking portion 58A is formed on the substrate 11. The blocking portion 58A is not provided on the sensor portion 50, but is provided so as to cover the gate electrode 24. In step S12, a solution 34 is dripped onto the sensor portion 50. At this time, the blocking portion 58A prevents the solution 34 from contacting the gate electrode 24. Thereafter, in step S14 of FIG. 10, the blocking portion 58A is removed. In step S15, the dam portion 32 is not formed. In step S16, a solution 36 is dripped so as to cover the sensor portion 50 and the gate electrode 24.

[0090] As in Modification 2 of the second embodiment, when the dam portion 32 is not formed, a blocking portion 58A that covers the gate electrode 24 may be provided before dropping the solution 34. The other configurations are the same as those of the second embodiment, and therefore description thereof will be omitted.

[0091] (Modification 3 of the second embodiment) FIG. 11(b) is a cross-sectional view showing a manufacturing process of a sensor element according to Modification 3 of the second embodiment of the present invention.

[0092] As shown in FIG. 11(b), a sensor element 109A of Modification 3 of the second embodiment includes a plurality of sensor portions 50 and 50E. Blocking portions 58A are provided on the gate electrode 24 and some of the sensor portions 50E, but not on the other sensor portions 50. As a result, a receiving layer 26 is not formed on the sensor portion 50E, but is formed on the sensor portion 50. In step S16, a solution 36 is dripped so as to cover all of the sensor portions 50 and 50E and the gate electrode 24. The other configurations are the same as those of the second embodiment, and therefore a description thereof will be omitted.

[0093] As in Modification 3 of the second embodiment, when a plurality of sensor units 50 and 50E are provided on the substrate 11, some of the sensor units 50E may not be provided with the receptive layer 26. The sensor unit 50E that is not provided with the receptive layer 26 serves as a reference sensor unit 50E that does not detect the target substance 38. The other configurations are the same as those in Modification 2 of the second embodiment, and therefore description thereof will be omitted.

[0094] (Third embodiment) The third embodiment and its modifications are examples of a sensor array. Fig. 12(a) is a cross-sectional view showing a manufacturing process of the sensor array according to the third embodiment of the present invention, and Fig. 12(b) is a cross-sectional view showing the sensor array according to the third embodiment of the present invention in use.

[0095] As shown in Figures 12(a) and 12(b), the sensor array 110 of the third embodiment includes a gate electrode 24, sensor portions 50A, 50B, and 50E, a dam portion 32, and partition portions 30A and 30B. The dam portion 32 surrounds the gate electrode 24 and the sensor portions 50A, 50B, and 50E. The partition portion 30A is provided between the sensor portions 50A and 50B. The partition portion 30B is provided between the sensor portion 50E and the gate electrode 24 and the sensor portion 50B. The heights of the partition portions 30A and 30B are lower than the height of the dam portion 32.

[0096] When manufacturing the sensor array 110 of the third embodiment, in step S12 of FIG. 2, as shown in FIG. 12(a), a solution 34A is introduced into a region 56A between the dam portion 32 and the partition portion 30A. A solution 34B is introduced into a region 56B between the partition portions 30A and 30B. No solution is introduced into a region 56E between the partition portion 30B and the dam portion 32. As a result, the receiving layers 26A and 26B are formed in the sensor portions 50A and 50B, respectively, and no receiving layer is formed in the sensor portion 50E. The receiving layers 26A and 26B may be receiving layers that capture different types of target substances 38, or may be receiving layers that capture the same type of target substance 38. The introduction and discharge of the solution 34A and the introduction and discharge of the solution 34B may be performed at different times.

[0097] When using the sensor array 110 of the third embodiment, in step S16 of FIG. 2, the solution 36 is introduced into the regions 56A, 56B, and 56E so that the upper surface of the solution 36 is higher than the partition sections 30A and 30B, as shown in FIG. 12(b). By applying a voltage to the gate electrode 24, a gate potential can be supplied to the channel layer 14 of the sensor sections 50A, 50B, and 50E via the solution 36. The user can obtain a detection signal of the target substance 38 using the sensor sections 50A and 50B. The sensor section 50E can obtain a reference signal when the target substance 38 is not captured. The other configurations are the same as those of the first embodiment, and therefore description thereof will be omitted.

[0098] (Modification 1 of the third embodiment) FIG. 13 is a plan view showing a sensor array according to a first modification of the third embodiment of the present invention. As shown in FIG. 13, the sensor array 111 according to the first modification of the third embodiment includes a substrate 11, multiple sensor units 50A to 50D, multiple gate electrodes 24A to 24D, a dam unit 32, a partition unit 30, pads 44, 46, 48, and wirings 45, 47, 49. The sensor units 50A to 50D are provided on the substrate 11 and each include a channel layer 14 and electrodes 16 and 18. The receptor layers 26A to 26D are provided on the channel layers 14 of the sensor units 50A to 50D, respectively. The receptor layers 26A to 26D capture different types of target substances 38. The gate electrodes 24A to 24D are provided corresponding to the sensor units 50A to 50D, respectively.

[0099] The gate electrodes 24A to 24D and the channel layers 14 of the sensor units 50A to 50D are at approximately the same distance from each other, which allows the potentials applied to the channel layers 14 by the gate electrodes 24A to 24D to be approximately the same.

[0100] The dam section 32 is provided on the substrate 11 so as to surround the sensor sections 50A to 50D and the gate electrodes 24A to 24D. The partition section 30 divides the inside of the dam section 32 into regions 56A to 56D and 56F. The height of the partition section 30 is lower than the height of the dam section 32. The sensor sections 50A to 50D are provided in the regions 56A to 56D, respectively. The gate electrodes 24A to 24D are provided in the region 56F.

[0101] Pad 44 is electrically connected to gate electrodes 24A to 24D via wiring 45. Pad 46 is electrically connected to electrodes 16 of sensor units 50A to 50D via wiring 47. Multiple pads 48 are electrically connected to electrodes 18 of sensor units 50A to 50D via wiring 49.

[0102] The pad 44 can supply a common gate voltage to the gate electrodes 24A to 24D. The pad 46 can supply a common voltage to the electrodes 16 of the sensor portions 50A to 50D. The multiple pads 48 can supply individual voltages to the electrodes 18 of the sensor portions 50A to 50D. Multiple pads 44 may be provided, and the gate voltage may be supplied individually to the gate electrodes 24A to 24D from the multiple pads 44. Multiple pads 46 may be provided, and the gate voltage may be supplied individually to the electrodes 16 of the sensor portions 50A to 50D from the multiple pads 46.

[0103] When manufacturing sensor array 111 of Variation 1 of the third embodiment, in step S12 of FIG. 2, different types of solutions for forming different types of receiving layers 26A to 26D are introduced into regions 56A to 56D. At this time, no solution is introduced into region 56F. This allows receiving layers 26A to 26D to be formed in sensor units 50A to 50D, respectively. This makes it possible to prevent the solution from adhering to gate electrodes 24A to 24D.

[0104] When using the sensor array 111 of the first modified example of the third embodiment, in step S16 of Fig. 2, the solution 36 is introduced into the regions 56A to 56D and 56F so that the upper surface of the solution 36 is higher than the partition portion, as shown in Fig. 12(b). By applying a voltage to the gate electrode 24, a gate potential can be supplied to the channel layer 14 of the sensor portions 50A to 50D via the solution 36. The other configurations are the same as those of the third embodiment, and therefore a description thereof will be omitted.

[0105] According to the first modification of the third embodiment, the channel layers 14 in at least two sensor units 50A having the same type of receiving layer 26A are not separated by the partition unit 30. As a result, by introducing the solution 34 into the region 56A in step S12, the same type of receiving layer 26A can be formed in the multiple sensor units 50A.

[0106] (Modification 2 of the third embodiment) Fig. 14 is a plan view showing a sensor array according to Modification 2 of the third embodiment of the present invention. As shown in Fig. 14, the sensor array 112 according to Modification 2 of the third embodiment includes a substrate 11, a plurality of sensor units 50A to 50C and 50E, a plurality of gate electrodes 24A to 24C and 24E, a dam unit 32, and partition units 30 and 33. The sensor units 50A to 50C include receptive layers 26A to 26C, respectively. The sensor unit 50E does not include a receptive layer. The gate electrodes 24A to 24C and 24E are provided corresponding to the sensor units 50A to 50C and 50E, respectively.

[0107] The partition section 33 is provided on the substrate 11. The height of the partition section 33 is higher than that of the partition section 30 and lower than that of the dam section 32. The partition section 33 divides the interior of the dam section 32 into four regions: regions 56A and 56FA, regions 56B and 56FB, regions 56C and 56FC, and regions 56E and 56FE. The partition section 30 divides regions 56A and 56FA, regions 56B and 56FB, regions 56C and 56FC, and regions 56E and 56FE. The sensor sections 50A to 50C and 50E are provided in regions 56A to 56C and 56E, respectively. The gate electrodes 24A to 24C and 24E are provided in regions 56FA to 56FC and 56FE, respectively.

[0108] The two regions 56A sandwich the region 56FA. This allows the number of gate electrodes 24A to be reduced while maintaining the same distance between the gate electrode 24A and the channel layer 14 of the sensor unit 50A. The same applies to the other regions 56B, 56C, and 56E.

[0109] When manufacturing the sensor array 112 of the second modification of the third embodiment, in step S12 of FIG. 2, different types of solutions 34 for forming different types of receiving layers 26A to 26C are introduced into the regions 56A to 56C. At this time, the upper surface of the solutions 34 is set lower than the upper surface of the partition section 30. As a result, the solutions are not introduced into the regions 56FA to 56FC and 56FE. As a result, the receiving layers 26A to 26C are formed in the sensor sections 50A to 50C, respectively. Adhesion of the solutions to the gate electrodes 24A to 24C and 24E can be suppressed.

[0110] When using the sensor array 112 of the second modification of the third embodiment, in step S16 of FIG. 2, the solution 36 is introduced into the intersection 64 of the partition sections 33. The upper surface of the solution 36 is set higher than the upper surface of the partition sections 33. This allows the solution 36 to be introduced into regions 56A to 56C, 56E, 56FA to 56FC, and 56FE. By applying a voltage to the gate electrode 24, a gate potential can be supplied to the channel layers 14 of the sensor sections 50A to 50C and 50E via the solution 36. The other configurations are the same as those of the third embodiment, and therefore a description thereof will be omitted.

[0111] According to the second modification of the third embodiment, the partition 33 (second partition) has a height that is higher than the height of the partition 30 and lower than the height of the dam portion 32. The partition 33 separates the channel layer 14 and gate electrode 24A of the sensor portion 50A (sensor portion of the first sensor element) from the channel layer 14 and gate electrode 24B of the sensor portion 50B (sensor portion of the second sensor element). This allows different receiving layers 26A and 26B to be formed in the sensor portions 50A and 50B without attaching the solution 34 to the gate electrodes 24A and 24B when manufacturing the sensor array 112. Furthermore, when using the sensor array 112, the solution 36 can be introduced into the sensor portions 50A and 50B.

[0112] (Modification 3 of the third embodiment) Fig. 15 is a plan view showing a sensor array according to Modification 3 of the third embodiment of the present invention. As shown in Fig. 15, the sensor array 113 according to Modification 3 of the third embodiment includes a common gate electrode 24. A partition section 30 separates regions 56A to 56C and 56E. Sensor sections 50A to 50C and 50E are provided in regions 56A to 56C and 56E, respectively. The gate electrode 24 is provided in region 56E.

[0113] When manufacturing the sensor array 113 of the third modification of the third embodiment, in step S12 of FIG. 2, different types of solutions 34 for forming different types of receiving layers 26A to 26C are introduced into the regions 56A to 56C. At this time, the upper surface of the solutions 34 is set lower than the upper surface of the partition section 30. As a result, no solutions are introduced into the region 56E. As a result, the receiving layers 26A to 26C are formed in the sensor sections 50A to 50C, respectively. Adhesion of the solutions to the gate electrodes 24 can be suppressed.

[0114] When using the sensor array 113 of the third modification of the third embodiment, in step S16 of FIG. 2, the solution 36 is introduced into the dam section 32 so that the upper surface of the solution 36 is higher than the upper surface of the partition section 33. This allows the solution 36 to be introduced into the regions 56A to 56C and 56E. By applying a voltage to the gate electrode 24, a gate potential can be supplied to the channel layers 14 of the sensor sections 50A to 50C and 50E via the solution 36. The other configurations are the same as those of the third embodiment, and therefore a description thereof will be omitted.

[0115] According to the third modification of the third embodiment, it is possible to reduce the number of partitions 30. Furthermore, the gate electrode 24 is provided in common for at least two of the plurality of sensor elements, which allows for miniaturization.

[0116] (Modification 4 of the third embodiment) FIG. 16 is a plan view showing a sensor array according to Modification 4 of the third embodiment of the present invention. As shown in FIG. 16, the sensor array 114 according to Modification 4 of the third embodiment includes a gate electrode 24, a gate electrode 24R, a dam portion 32A, pads 44, 44R, and wirings 45 and 45R. The dam portion 32A surrounds regions 56AR to 56CR, 56ER, and 56FR. The height of the dam portion 32A is greater than the height of the partition portion 30. Within the dam portion 32A, the partition portion 30 separates regions 56AR to 56CR, 56ER, and 56FR. The sensor portions 50AR to 50CR and 50ER are provided in regions 56AR to 56CR and 56ER, respectively. The gate electrode 24R is provided in region 56FR.

[0117] Regions 56A to 56C, 56E, and 56F are provided between dam portions 32 and 32A. Partition portion 30 separates regions 56A to 56C, 56E, and 56F. Sensor portions 50A to 50C and 50E are provided in regions 56A to 56C and 56E, respectively. Gate electrode 24 is provided in region 56F.

[0118] The pad 44 is electrically connected to the gate electrode 24 via a wiring 45. The pad 44R is electrically connected to the gate electrode 24R via a wiring 45R.

[0119] When manufacturing the sensor array 114 of the fourth modification of the third embodiment, in step S12 of FIG. 2, the solution 34 for forming the same type of receiving layer 26A is introduced into the regions 56A and 56AR. The solution 34 for forming the same type of receiving layer 26B is introduced into the regions 56B and 56BR. The solution 34 for forming the same type of receiving layer 26C is introduced into the regions 56C and 56CR. At this time, the upper surface of the solution 34 is lower than the upper surface of the partition portion 30. As a result, the solution is not introduced into the regions 56E, 56F, 56ER, and 56FR. As a result, the receiving layers 26A to 26C are formed in the sensor portions 50A to 50C, respectively. Furthermore, adhesion of the solution to the sensor portion E and the gate electrodes 24 and 24R can be suppressed.

[0120] When using the sensor array 114 of the fourth modification of the third embodiment, in step S16 of FIG. 2, the solution 36 is introduced between the dam portions 32 and 32A so that the upper surface of the solution 36 is higher than the upper surface of the partition portion 30. This allows the solution 36 to be introduced into regions 56A to 56C and 56E. Furthermore, a reference solution is introduced into the dam portion 32A. The reference solution is, for example, a solution that does not contain the target substance 38. The gate electrode 24 can supply a gate potential to the channel layers 14 of the sensor portions 50A to 50C and 50E via the solution 36. The gate electrode 24R can supply a gate potential to the channel layers 14 of the sensor portions 50AR to 50CR and 50ER via the reference solution. The other configurations are the same as those of the third embodiment, and therefore will not be described further.

[0121] (Fifth Modification of the Third Embodiment) Fig. 17 is a plan view showing a sensor array according to Modification 5 of the third embodiment of the present invention. As shown in Fig. 17, the sensor array 115 according to Modification 5 of the third embodiment includes a gate electrode 24, a gate electrode 24R, and a dam portion 32A. The dam portion 32A separates regions 56A to 56C and 56F from regions 56AR to 56CR and 56FR. The height of the dam portion 32A is greater than the height of the partition portion 30. The other configurations are the same as those of Modification 4 of the third embodiment, and therefore a description thereof will be omitted.

[0122] According to the fourth and fifth modifications of the third embodiment, the height of the dam portion 32A (second partition portion) is greater than the height of the partition portion 30. The dam portion 32A separates the channel layers 14 of the multiple sensor portions 50A that have the same receiving layer 26A. This allows different solutions to be introduced into the regions 56 and 56AR.

[0123] The above describes in detail preferred embodiments, but the present invention is not limited to the above-described embodiments, and various modifications and substitutions can be made to the above-described embodiments without departing from the scope of the claims.

[0124] The above-disclosed embodiments include, for example, the following aspects. (1) A sensor element comprising: a substrate; a channel layer provided on the substrate; a first electrode provided on the substrate and electrically connected to the channel layer; a second electrode provided on the substrate and electrically connected to the channel layer; a gate electrode provided on the substrate; a receptor layer provided on the channel layer and capable of capturing a target substance; and a partition portion on the substrate that separates the channel layer from the gate electrode. (2) The sensor element according to (1), further comprising a dam portion on the substrate that surrounds the channel layer and the gate electrode, the partition portion and the dam portion forming a closed region including the channel layer and a closed region including the gate electrode when viewed from the thickness direction of the substrate, and the height of at least a portion of the partition portion is lower than the height of the dam portion. (3) The sensor element according to (2), further comprising a blocking portion capable of blocking a space including the channel layer partitioned by the partition portion from a space including the gate electrode within the dam portion. (4) The sensor element according to (2), further comprising an opening / closing part that can open and close at least a part of the partition part. (5) A sensor array comprising a plurality of sensor elements according to any one of (1) to (4). (6) A sensor array as described in (5), which is provided on the substrate, has a dam portion that surrounds the plurality of sensor elements and has a height greater than the height of the partition portion, and at least two channel layers among the plurality of sensor elements that have the same type of receiving layer are not separated by a partition portion. (7) 10. The sensor array according to claim 9, further comprising: a dam section provided on the substrate, surrounding the plurality of sensor elements, and having a height greater than that of the partition section; and a second partition section provided on the substrate, having a height greater than that of the partition section and less than that of the dam section, wherein the plurality of sensor elements include a first sensor element and a second sensor element having a receiving layer of a different type from that of the first sensor element, and the second partition section separates the channel layer and gate electrode of the first sensor element from the channel layer and gate electrode of the second sensor element. (8) A sensor array as described in (5), comprising: a dam portion provided on the substrate, surrounding the plurality of sensor elements, and having a height greater than that of the partition portion; and a second partition portion provided on the substrate, having a height greater than that of the partition portion, wherein the plurality of sensor elements include a first sensor element and a second sensor element having the same type of receiving layer as the first sensor element, and the second partition portion separates the channel layer of the first sensor element from the channel layer of the second sensor element. (9) The sensor array according to any one of (5) to (8), wherein the gate electrode of at least two of the plurality of sensor elements is provided in common. (10) A method for manufacturing a sensor element, comprising: a step of preparing a transistor including a substrate, a channel layer provided on the substrate, a first electrode provided on the substrate and electrically connected to the channel layer, a second electrode provided on the substrate and electrically connected to the channel layer, and a gate electrode provided on the substrate; and a step of contacting the channel layer with a solution containing a material that will become a receptor layer capable of capturing a target substance, and forming the receptor layer on the channel layer without contacting the solution with the gate electrode. (11) 11. A method for manufacturing a sensor element as described in claim 10, comprising the steps of: forming a first dam section on the substrate that surrounds the channel layer but not the gate electrode; removing the first dam section; and, after the step of removing the first dam section, forming a second dam section on the substrate that surrounds the channel layer and the gate electrode, wherein the step of forming the receiving layer includes the step of introducing a solution containing a material that will become the receiving layer into the first dam section between the step of forming the first dam section and the step of removing the first dam section. [Explanation of symbols]

[0125] 10: Circuit board 11: Base material 12, 20: Insulating layer 14: Channel layer 16, 18: Electrode 21,22:Aperture 24, 24A, 24B, 24C, 24D, 24E, 24F, 24R: gate electrodes 26, 26A, 26B, 26C, 26D: Receptor layer 30, 30A, 30B, 33: Partition 30a, 31a, 31b, 32a, 32b, 35a, 35b, 35c: Opening 30b: recess 31, 32, 32A: Dam section 34, 34A, 34B, 36: Solution 38: Target substance 39: Coating layer 50, 50A, 50AR, 50B, 50BR, 50C, 50CR, 50D, 50E: Sensor part 52: Transistor 57: Opening and closing section 58: Cut-off section [Prior art documents] [Patent documents]

[0126] [Patent Document 1] Japanese Patent Application Laid-Open No. 2018-014360

Claims

1. A substrate; a channel layer provided on the substrate; a first electrode provided on the substrate and electrically connected to the channel layer; a second electrode provided on the substrate and electrically connected to the channel layer; a gate electrode provided on the substrate; a receptor layer provided on the channel layer and capable of capturing a target substance; a partition portion on the substrate that separates the channel layer from the gate electrode; A sensor element comprising:

2. a dam portion on the substrate that surrounds the channel layer and the gate electrode; the partition portion and the dam portion form, when viewed in a thickness direction of the base material, a region including the channel layer and a region including the gate electrode; The height of at least a part of the partition portion is lower than the height of the dam portion. The sensor element according to claim 1 .

3. 3. The sensor element according to claim 2, further comprising a blocking portion capable of blocking a space including the channel layer partitioned by the partition portion from a space including the gate electrode within the dam portion.

4. The sensor element according to claim 2 , further comprising an opening / closing portion that can open and close at least a portion of the partition portion.

5. A sensor array comprising a plurality of sensor elements according to claim 1.

6. a dam portion provided on the base material, surrounding the plurality of sensor elements, and having a height greater than a height of the partition portion; At least two channel layers having the same type of receiving layer among the channel layers of the plurality of sensor elements are not separated by a partition portion. The sensor array of claim 5 .

7. a dam portion provided on the base material, surrounding the plurality of sensor elements, and having a height greater than a height of the partition portion; a second partition portion provided on the base material and having a height higher than the height of the partition portion and lower than the height of the dam portion; Equipped with the plurality of sensor elements include a first sensor element and a second sensor element having a different type of receiving layer from that of the first sensor element; the second partition portion separates the channel layer and gate electrode of the first sensor element from the channel layer and gate electrode of the second sensor element; The sensor array of claim 5 .

8. a dam portion provided on the base material, surrounding the plurality of sensor elements, and having a height greater than a height of the partition portion; a second partition portion provided on the base material and having a height greater than that of the partition portion; Equipped with the plurality of sensor elements include a first sensor element and a second sensor element having the same type of receiving layer as the first sensor element; the second partition portion separates the channel layer of the first sensor element from the channel layer of the second sensor element; The sensor array of claim 5 .

9. 9. The sensor array according to claim 5, wherein the gate electrode of at least two of the plurality of sensor elements is provided in common.

10. preparing a transistor including a substrate, a channel layer provided on the substrate, a first electrode provided on the substrate and electrically connected to the channel layer, a second electrode provided on the substrate and electrically connected to the channel layer, and a gate electrode provided on the substrate; a step of contacting the channel layer with a solution containing a material that will become a receptor layer capable of capturing a target substance, and forming the receptor layer on the channel layer without contacting the solution on the gate electrode; A method for manufacturing a sensor element, comprising:

11. forming a first dam portion on the substrate, the first dam portion surrounding the channel layer but not surrounding the gate electrode; removing the first dam portion; forming a second dam portion on the substrate to surround the channel layer and the gate electrode after the step of removing the first dam portion; Equipped with the step of forming the receiving layer includes a step of introducing a solution containing a material that will become the receiving layer into the first dam portion between the step of forming the first dam portion and the step of removing the first dam portion. The method for manufacturing the sensor element according to claim 10.

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