Semiconductor manufacturing device, lifting method, and method for manufacturing semiconductor device

Abstract

To provide a technique that facilitates the creation of time chart recipes.SOLUTION: A semiconductor manufacturing device comprises: a lifting unit having a plurality of blocks, each of the plurality of blocks being capable of independent vertical movement; a display device configuring a lifting sequence for the plurality of blocks in a plurality of steps and displaying a setting screen where heights of the plurality of blocks can be input for each step; and a control unit capable of setting the plurality of lifting parameters by inputting one setting item in the setting screen and configured to control operations of the plurality of blocks based on the plurality of set lifting parameters.SELECTED DRAWING: Figure 10

Description

[Technical Field]

[0001] The present disclosure relates to semiconductor manufacturing equipment and is applicable to, for example, a die bonder having a push-up unit. [Background technology]

[0002] One step in the manufacturing process of a semiconductor device is a peeling process in which dies separated from a wafer are peeled off from a dicing tape. In this peeling process, for example, a push-up unit peels off each die from the backside of the dicing tape held in a wafer supply unit, and the die is picked up using a suction nozzle such as a collet attached to a pickup head or bond head.

[0003] The thrust-up unit is configured, for example, so that each of the multiple blocks can operate independently. The thrust-up sequence for the multiple blocks is configured with multiple steps, and the operation of the multiple blocks of the thrust-up unit is controlled based on a time chart recipe that can set the height and speed of the multiple blocks for each block and each step (for example, Patent Document 1). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2020-161534 Summary of the Invention [Problem to be solved by the invention]

[0005] The time chart recipe disclosed in Patent Document 1 is complicated, difficult to create, and requires a lot of time and effort.

[0006] An object of the present disclosure is to provide a technique that can facilitate the creation of a time chart recipe. Other objects and novel features will become apparent from the description of this specification and the accompanying drawings. [Means for solving the problem]

[0007] A brief summary of representative aspects of this disclosure is as follows. That is, the semiconductor manufacturing apparatus comprises a push-up unit having a plurality of blocks, each of which can move up and down independently; a display device which displays a setting screen in which the push-up sequence of the plurality of blocks is made up of a plurality of steps and in which the height of the plurality of blocks can be input for each step; and a control unit which allows a plurality of push-up parameters to be set by inputting one of the setting items on the setting screen and is configured to control the operation of the plurality of blocks based on the plurality of set push-up parameters. [Effects of the Invention]

[0008] According to the present disclosure, it is possible to easily create a time chart recipe. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a schematic top view showing an example of the configuration of a die bonder according to an embodiment. [Figure 2] FIG. 2 is a diagram illustrating the schematic configuration when viewed from the direction of arrow A in FIG. [Figure 3] FIG. 3 is a schematic cross-sectional view showing a main part of the wafer supply unit shown in FIG. [Figure 4] FIG. 4 is a block diagram showing a schematic configuration of a control system of the die bonder shown in FIG. [Figure 5] FIG. 5 is a flowchart showing a method for manufacturing a semiconductor device using the die bonder shown in FIG. [Figure 6] FIG. 6 is a top view of the push-up unit shown in FIG. [Figure 7] FIG. 7 is a schematic cross-sectional view of a main part of the push-up unit shown in FIG. [Figure 8] FIG. 8 is a diagram showing a schematic example of the connection between the blocks and the drive shaft when the number of blocks is less than four. [Figure 9] FIG. 9 is a diagram for explaining the flow of setting a time chart recipe on the setting screen. [Figure 10] FIG. 10 shows an example of settings on the setting screen for multi-stage operation in a four-stage block and the height of the block based on the settings. [Figure 11] FIG. 11 is a diagram showing the timing of block operations in the thrust-up sequence based on the setting values ​​on the setting screen shown in FIG. [Figure 12] FIG. 12 shows an example of settings on the reverse multi-stage operation setting screen and the height of the blocks based on the settings. [Figure 13] FIG. 13 is a diagram showing the timing of block operations in the thrust-up sequence based on the setting values ​​on the setting screen shown in FIG. [Figure 14] FIG. 14 shows an example of settings on a setting screen for reverse multi-stage operation in a three-stage block and the height of the block based on the settings. [Figure 15] FIG. 15 shows an example of settings on a setting screen for reverse multi-stage operation in a two-stage block and the height of the block based on the settings. [Figure 16] FIG. 16 is a diagram showing another example of settings on the setting screen for the reverse multi-stage operation in a four-stage block and the height of the block based on the settings. [Figure 17] FIG. 17 shows an example of settings on the general-purpose operation setting screen for a four-tier block and the height of the block based on the settings. [Figure 18] FIG. 18 shows another example of settings on the setting screen for the reverse multi-stage operation in a four-stage block and the height of the block based on the setting. [Figure 19] FIG. 19 is a diagram showing the timing of block operations in the thrust-up sequence based on the setting values ​​on the setting screen shown in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments will be described with reference to the drawings. However, in the following description, the same components will be assigned the same reference numerals, and repeated description may be omitted. Note that, in order to clarify the description, the width, thickness, shape, etc. of each part may be shown schematically compared to the actual embodiment. Furthermore, the dimensional relationships, ratios, etc. of each element between multiple drawings do not necessarily match.

[0011] The configuration of a die bonder, which is one embodiment of semiconductor manufacturing equipment, will be described with reference to Figures 1 to 3. Figure 1 is a schematic top view showing an example of the configuration of the die bonder in the embodiment. Figure 2 is a diagram explaining the schematic configuration as seen from the direction of arrow A in Figure 1. Figure 3 is a schematic cross-sectional view showing the main parts of the wafer supply unit shown in Figure 1.

[0012] The die bonder 1 broadly comprises a wafer supply unit 10, a pickup unit 20, an intermediate stage unit 30, a bonding unit 40, a transport unit 50, a substrate supply unit 60, a substrate unloading unit 70, and a control unit (control device) 80. The Y2-Y1 direction is the front-to-rear direction of the die bonder 1, the X2-X1 direction is the left-to-right direction, and the Z1-Z2 direction is the up-to-down direction. The wafer supply unit 10 is located on the front side of the die bonder 1, and the bonding unit 40 is located on the rear side.

[0013] The wafer supply unit 10 includes a wafer cassette lifter 11, a wafer holder 12, a push-up unit 13, and a wafer recognition camera 14.

[0014] A wafer cassette lifter 11 moves a wafer cassette (not shown), which stores multiple wafer rings WR, up and down to the wafer transport height. A wafer correction chute (not shown) aligns the wafer rings WR supplied from the wafer cassette lifter 11. A wafer extractor (not shown) removes wafer rings WR from the wafer cassette and supplies them to the wafer holder 12, or removes them from the wafer holder 12 and stores them in the wafer cassette.

[0015] The wafer holder 12 has an expand ring 121 that holds the wafer ring WR, and a support ring 122 that is held by the wafer ring WR and horizontally positions the dicing tape DT. The push-up unit 13 is disposed inside the support ring 122.

[0016] A wafer W is adhered (attached) onto a dicing tape DT, and the wafer W is divided into multiple dies D. A film-like adhesive material DF called a die attach film (DAF) is attached between the wafer W and the dicing tape DT. The adhesive material DF hardens when heated.

[0017] Wafer holder 12 is moved in the X1-X2 and Y1-Y2 directions by a drive unit (not shown), and moves the die D to be picked up to the position of push-up unit 13. Wafer holder 12 also rotates wafer ring WR in the XY plane by a drive unit (not shown). Push-up unit 13 moves up and down by a drive unit (not shown). Push-up unit 13 peels die D from dicing tape DT. Wafer holder 12 and push-up unit 13 constitute a pickup device (semiconductor manufacturing equipment). The pickup device may include pickup section 20.

[0018] When the die D is pushed up, the wafer holder 12 lowers the expand ring 121 holding the wafer ring WR. At this time, the support ring 122 does not descend, so the dicing tape DT held by the wafer ring WR is stretched, widening the gap between the dies D, preventing interference and contact between the dies D and making it easier for the individual dies to separate and be pushed up. The expand ring 121 and support ring 122 are collectively called an expander. The push-up unit 13 pushes up the die D from below, accelerating the separation of the die D and improving the pick-up ability of the die D by the collet.

[0019] The wafer recognition camera 14 recognizes the pick-up position of the die D to be picked up from the wafer W and inspects the surface of the die D.

[0020] The pickup unit 20 has a pickup head 21 and a Y drive unit 23. The pickup head 21 is provided with a collet 22 that suction-holds the peeled die D at its tip. The pickup head 21 picks up the die D from the wafer supply unit 10 and places it on the intermediate stage 31. The Y drive unit 23 moves the pickup head 21 in the Y1-Y2 direction. The pickup unit 20 has various drive units (not shown) that raise and lower, rotate, and move the pickup head 21 in the X direction.

[0021] The intermediate stage unit 30 has an intermediate stage 31 on which the die D is placed, and a stage recognition camera 34 for recognizing the die D on the intermediate stage 31. The intermediate stage 31 has suction holes that adsorb the placed die D. The placed die D is temporarily held on the intermediate stage 31. The intermediate stage 31 is both a placement stage on which the die D is placed and a pickup stage on which the die D is picked up.

[0022] The bonding unit 40 includes a bond head 41, a Y-axis drive unit 43, a substrate recognition camera 44, and a bond stage 46. The bond head 41 is provided with a collet 42 that suction-holds a die D at its tip. The Y-axis drive unit 43 moves the bond head 41 in the Y1-Y2 direction. The substrate recognition camera 44 captures an image of a position recognition mark (not shown) on the substrate S to recognize the bond position. The substrate S has multiple product areas (hereinafter referred to as package areas P) that will ultimately become a single package. A position recognition mark is provided for each package area P. The bond stage 46 is raised when the die D is placed on the substrate S and supports the substrate S from below. The bond stage 46 has a suction port (not shown) for vacuum-suctioning the substrate S, allowing the substrate S to be fixed in place. The bond stage 46 also has a heating unit (not shown) for heating the substrate S. The bonding section 40 has driving sections (not shown) for raising and lowering, rotating and moving the bond head 41 in the X direction.

[0023] With this configuration, the bond head 41 corrects the pickup position and posture based on the image data of the stage recognition camera 34, and picks up the die D from the intermediate stage 31. Then, the bond head 41 bonds the die D onto the package area P of the substrate S based on the image data of the substrate recognition camera 44, or bonds the die D by stacking it on top of a die that has already been bonded onto the package area P of the substrate S.

[0024] The transport unit 50 has transport claws 51 that grip and transport the substrate S, and a transport lane 52 along which the substrate S moves. The substrate S moves in the X direction by driving a nut (not shown) of the transport claws 51 provided on the transport lane 52 with a ball screw (not shown) provided along the transport lane 52. With this configuration, the substrate S moves from the substrate supply unit 60 along the transport lane 52 to the bonding position, and after bonding, moves to the substrate unloading unit 70 and hands the substrate S over to the substrate unloading unit 70.

[0025] The substrate supply unit 60 removes the substrate S, which has been stored in a transport jig and carried in, from the transport jig and supplies it to the transport unit 50. The substrate unloading unit 70 stores the substrate S, which has been carried in by the transport unit 50, in the transport jig.

[0026] Next, the control unit 80 will be described with reference to Fig. 4. Fig. 4 is a block diagram showing a schematic configuration of a control system of the die bonder shown in Fig. 1.

[0027] The control system 8 includes a control unit (control device) 80, a drive unit 86, a signal unit 87, an optical system 88, etc. The control unit 80 broadly includes a control and arithmetic unit 81, mainly composed of a CPU (Central Processing Unit), a storage unit 82, an input / output unit 83, a bus line 84, and a power supply unit 85. The storage unit 82 includes a main storage unit 82a and an auxiliary storage unit 82b. The main storage unit 82a is composed of a RAM (Random Access Memory) that stores processing programs and the like. The auxiliary storage unit 82b is composed of an HDD (Hard Disk Drive) or SSD (Solid State Drive) that stores control programs, process recipes, control data required for control, image data, etc. The process recipe functions as a program, combining the steps and conditions in the semiconductor device manufacturing process described below so that the control unit 80 can execute them and obtain predetermined results.

[0028] The input / output device 83 includes a monitor 83a that displays the device status and other information, a touch panel 83b that inputs operator instructions, a mouse 83c that operates the monitor 83a, and an image capture device 83d that captures image data from the optical system 88. The input / output device 83 also includes a motor control device 83e and an I / O signal control device 83f. The motor control device 83e controls the XY table (not shown) of the wafer supply unit 10, the ZY drive axis of the bond head table, and the drive unit of the push-up unit 13. The I / O signal control device 83f captures or controls signals from a signal unit 87 that includes switches and volumes that control the brightness of various sensors and lighting devices. The optical system 88 includes a wafer recognition camera 14, a stage recognition camera 34, and a substrate recognition camera 44. The control / arithmetic unit 81 captures and calculates necessary data via the bus line 84, controls the pickup head 21, and sends information to the monitor 83a.

[0029] A part of the manufacturing process of a semiconductor device using the die bonder 1 (a method for manufacturing a semiconductor device) will be described with reference to Fig. 5. Fig. 5 is a flowchart showing a method for manufacturing a semiconductor device using the die bonder shown in Fig. 1. In the following description, the operation of each part constituting the die bonder 1 is controlled by a control unit 80.

[0030] (Wafer loading process: process S1) A wafer cassette (not shown) containing wafer rings WR is loaded into wafer cassette lifter 11. Wafer supply unit 10 removes wafer rings WR from the wafer cassette filled with wafer rings WR and carries them onto wafer holder 12.

[0031] (Substrate loading process: Process S2) The transport jig storing the substrate S is loaded into the substrate supply unit 60. The substrate supply unit 60 removes the substrate S from the transport jig. The removed substrate S is carried into the bonding unit 40 via the transport unit 50.

[0032] (Pickup process: process S3) After step S1, the wafer holder 12 is moved so that the desired die D can be picked up from the dicing tape DT. The die D is photographed by the wafer recognition camera 14, and the die D is positioned and its surface inspected based on the image data acquired by the photograph. The image data is processed to calculate the amount of deviation (in the X, Y, and θ directions) of the die D on the wafer holder 12 from the die position reference point of the die bonder, and the die is positioned accordingly. Note that the die position reference point is previously held at a predetermined position on the wafer holder 12 as the initial setting for the device. The image data is processed to inspect the surface of the die D.

[0033] The positioned die D is peeled off from the dicing tape DT by the push-up unit 13 and the pickup head 21. The die D peeled off from the dicing tape DT is attracted to and held by a collet 22 provided on the pickup head 21, and is transported to and placed on the intermediate stage 31.

[0034] The die D on the intermediate stage 31 is photographed by the stage recognition camera 34, and the die D is positioned and its surface inspected based on the image data acquired by photographing. The image data is processed to calculate the amount of deviation (in the X, Y, and θ directions) of the die D on the intermediate stage 31 from the die position reference point of the die bonder, and the die is positioned accordingly. Note that the die position reference point is previously held at a predetermined position on the intermediate stage 31 as the initial setting of the device. The image data is processed to inspect the surface of the die D.

[0035] After transporting the die D to the intermediate stage 31, the pickup head 21 is returned to the wafer supply unit 10. Following the procedure described above, the next die D is peeled off from the dicing tape DT, and thereafter, the dies D are peeled off one by one from the dicing tape DT following the same procedure.

[0036] (Bond process: Process S4) The substrate S is transported to the bond stage 46 by the transport unit 50. The substrate S placed on the bond stage 46 is imaged by the substrate recognition camera 44, and the positioning and surface inspection of the substrate S are performed based on the image data acquired by the image capture. The image data is processed to calculate the amount of deviation (X, Y, and θ directions) of the substrate S from the substrate position reference point of the die bonder 1. Note that the substrate position reference point is previously held at a predetermined position of the bonding unit 40 as the initial setting of the device. The image data is processed to perform surface inspection of the substrate S.

[0037] The suction position of the bond head 41 is corrected based on the deviation of the die D on the intermediate stage 31 calculated in step S3, and the die D is suctioned by the collet 42. The bond head 41, which has suctioned the die D from the intermediate stage 31, bonds the die D to a predetermined location on the substrate S supported by the bond stage 46. Here, the predetermined location on the substrate S is the package area P of the substrate S, or an area on which an element is already placed and an element is to be bonded in addition to that, or a bonding area for an element to be stacked and bonded. The die D bonded to the substrate S is photographed by the substrate recognition camera 44, and an inspection is performed based on the image data obtained by photographing to determine whether the die D has been bonded in the desired location, etc.

[0038] After bonding the die D to the substrate S, the bond head 41 is returned to the intermediate stage 31. Following the procedure described above, the next die D is picked up from the intermediate stage 31 and bonded to the substrate S. This is repeated until a die D is bonded to all the package areas P of the substrate S.

[0039] (Substrate unloading process: Process S5) The substrate S with the die D bonded thereto is transported to the substrate unloading section 70. At the substrate unloading section 70, the substrate S is removed from the transport claws 51 and stored in a transport jig. The transport jig storing the substrate S is unloaded from the die bonder 1.

[0040] As described above, the die D is mounted on the substrate S and is carried out from the die bonder 1. Thereafter, for example, a transport jig storing the substrate S on which the die D is mounted is transported to a wire bonding process, where the electrodes of the die D are electrically connected to the electrodes of the substrate S via Au wires or the like. Then, the substrate S is transported to a molding process, where the die D and the Au wires are sealed with molding resin (not shown), thereby completing a semiconductor package.

[0041] Next, the push-up unit 13 will be described with reference to Figures 6 and 7. Figure 6 is a top view of the push-up unit shown in Figure 2. Figure 7 is a schematic cross-sectional view of a main part of the push-up unit shown in Figure 6.

[0042] The push-up unit 13 includes a first unit 131 and a second unit 132 to which the first unit 131 is attached. The second unit 132 is a common part regardless of the type of product, and the first unit 131 is a part that can be replaced for each type of product.

[0043] The first unit 131 has a cylindrical dome 1312 and a block portion 1311 provided on it. The dome 1312 has an opening 1313 in the center of its top surface, which allows the block portion 1311 to move up and down. The dome 1312 has a plurality of suction ports 1314 and a plurality of grooves 1315 connecting the plurality of suction ports 1314 provided around the outer periphery of the opening 1313 in its top surface. The pressure inside the suction port 1314 is reduced by a suction mechanism (not shown) when the push-up unit 13 is raised to bring its top surface into contact with the back surface of the dicing tape DT. At this time, the back surface of the dicing tape DT is sucked downward and comes into close contact with the top surface of the dome 1312.

[0044] The block portion 1311 has a plurality of blocks that push the dicing tape DT upward. Here, an example is shown in which the block portion 1311 has four blocks BL1 to BL4. The innermost block BL4 is a square pillar. The three outermost blocks BL1 to BL3 are square tubes with square openings that penetrate in the Z1-Z2 direction. Block BL2, which is smaller in size than block BL1, is arranged inside block BL1. Block BL3, which is smaller in size than block BL2, is arranged inside block BL2. Block BL4, which is smaller in size than block BL3, is arranged inside block BL3.

[0045] Of the four blocks BL1 to BL4, the outermost block BL1 has a diameter slightly smaller than the outer periphery of the die D to be peeled off. This means that the corners that form the outer periphery of the top surface of block BL1 are located slightly inside the outer edge of the die D, making it possible to concentrate the force that peels the die D and dicing tape DT from each other at the point that serves as the starting point for peeling them (the outermost part of the die D).

[0046] The second unit 132, which serves as a drive section, has four drive shafts ND4 to ND1 that independently drive the blocks BL1 to BL4 in the up and down directions. For example, each of the drive shafts ND1 to ND4 is composed of a motor and a plunger mechanism that converts the motor's rotation into up and down movement. The tip ends (upper ends) of the drive shafts ND4 to ND1 that connect to the blocks BL1 to BL4 are called needles. The needles of the drive shafts ND1 to ND4 are called NDL1 to NDL4, respectively.

[0047] The first unit 131 may be configured with fewer than four blocks. In this case, some of the drive shafts ND1 to ND4 of the second unit 132 will operate and some will not. This will be explained using Figure 8, which is a diagram that schematically shows an example of the connections between the blocks and the drive shafts when the number of blocks is less than four.

[0048] When three blocks BL1 to BL3 are used, for example, in the 3BLK type thrust-up unit 13 shown in Figure 8, block BL1 is driven by drive shaft ND4, block BL2 is driven by drive shaft ND3, and block BL3 is driven by drive shaft ND1. In other words, drive shaft ND2 is not operated. Note that block BL3 may be driven by drive shaft ND2 instead of drive shaft ND1.

[0049] When two blocks BL1 and BL2 are used, for example, in the 2BLK type thrust-up unit 13 shown in Figure 8, block BL1 is driven by drive shaft ND4 and block BL2 is driven by drive shaft ND1. In other words, drive shafts ND2 and ND3 are not operated. Note that block BL2 may be driven by drive shaft ND3 instead of drive shaft ND1.

[0050] Each of the blocks BL1 to BL4 of the thrust-up unit 13 can operate independently, and therefore various operations (thrust-up sequences) are possible for the thrust-up unit 13. The thrust-up sequence of the multiple blocks is made up of multiple steps.

[0051] For example, the thrust unit 13 can simultaneously thrust up blocks BL1 to BL4 in a first step, simultaneously thrust up blocks BL2 to BL4 in a second step, simultaneously thrust up blocks BL3 and BL4 in a third step, and thrust up block BL4 in a fourth step. In this specification, this operation is called a multi-stage operation. A multi-stage operation using four blocks is called a multi-stage operation using four blocks.

[0052] Furthermore, the thrust-up unit 13 can simultaneously thrust up blocks BL1 to BL4 in a first step, lower block BL1 in a second step, lower block BL2 in a third step, and lower block BL3 in a fourth step. In this specification, this operation is referred to as a reverse multi-stage operation. A reverse multi-stage operation using four blocks is referred to as a four-block reverse multi-stage operation.

[0053] Next, a method for setting a time chart recipe 200 that defines the operation of the thrust-up unit 13 will be described with reference to Fig. 9. The time chart recipe 200 constitutes a part of the process recipe. Fig. 9 is a diagram for explaining the flow of setting a time chart recipe using a setting screen.

[0054] The setting screen 100 includes, for example, a setting screen 101 for multistage operation (FMS1), a setting screen 102 for reverse multistage operation (FMS2), and a setting screen 103 for general-purpose operation (FMS3). The setting screen 103 allows the setting of multistage operation and reverse multistage operation. The operator selects one setting screen from the multiple setting screens 101, 102, and 103 using the touch panel 83b or the like. The control unit 80 displays the selected setting screen on the monitor 83a. The operator then inputs setting values ​​into the items on the setting screen. The control unit 80 sets the push-up parameters (PARA) of the time chart recipe 200 (creates the time chart recipe 200) based on the input setting values. The control unit 80 can change the push-up operation by rewriting (setting) the time chart recipe 200 in real time based on information acquired from images from a sensor or a recognition camera, etc.

[0055] The control unit 80 is configured to control the drive axes ND4 to ND1 that drive the blocks BL1 to BL4, respectively, based on thrust parameters set in the time chart recipe. The thrust parameters are set, for example, by inputting values ​​into a setting screen displayed on the monitor 83a. The thrust parameters include the thrust height, thrust speed, and timer for each of NDL1 to NDL4.

[0056] Here, the push-up height refers to the position (height) of the tips of NDL1 to NDL4. The heights of NDL1 to NDL4 are referred to as NDL1_H to NDL4_H, and may be collectively referred to as NDL_H. When the top ends of blocks BL1 to BL4 are located on the upper surface of the dome 1312, NDL_H=0. The heights of NDL1 to NDL4 are also referred to as the heights of blocks BL4 to BL1. When referring to the heights of blocks BL4 to BL1, the upper surface of the dome 1312 is used as the reference.

[0057] The thrust speed (V) is the speed (VU) of ascent or the speed (VD) of descent of NDL1 to NDL4 (blocks BL4 to BL1).

[0058] The timer (T) is the time from when the rise or fall of NDL1 to NDL4 (blocks BL4 to BL1) in each step ends until the rise or fall of NDL1 to NDL4 (blocks BL4 to BL1) in the next step begins. The timer can also be thought of as an operating time difference (interval time) for adjusting the processing time between each block. The length of one step is the time it takes for NDL1 to NDL4 (blocks BL4 to BL1) to reach a predetermined height from a stopped state. Instead of a timer, the length (time) of one step may be used as a parameter. In this case, the time includes the time it takes for NDL1 to NDL4 (blocks BL4 to BL1) to reach a predetermined height from a stopped state and the time they are stopped while maintaining that height.

[0059] An example of push-up parameters set in the time chart recipe for the push-up unit 13 having four drive shafts is shown below, where n=1 to 4 and m=1 to 4. NDLm_H_Sn: Parameter of height (H) of needle m (NDLm) at nth step (Sn) NDLm_VU_Sn: Parameter of the thrust velocity (VU) of the needle m (NDLm) at the nth step (Sn) NDLm_VD_Sn: Parameter of the downward thrust velocity (VD) of needle m (NDLm) at the nth step (Sn) NDLm_T_Sn: Parameter of the timer (T) of needle m (NDLm) at the nth step (Sn)

[0060] [FMS1 setting example] Next, a setting example of the setting screen 101 for multi-stage operation in the thrust-up unit 13 shown in Fig. 7 and the operation thereof will be described with reference to Fig. 10. Fig. 10 is a diagram showing a setting example of the setting screen for multi-stage operation in a four-stage block and the height of the block based on the setting example.

[0061] The operator operates the touch panel 83b to select the setting screen 101. The control unit 80 displays the setting screen 101 on the monitor 83a. On the setting screen 101, it is possible to input NDL1_H [μm] in the first setting, NDL2_H [μm] in the second setting, NDL3_H [μm] in the third setting, and NDL4_H [μm] in the fourth setting. Data cannot be input into "-". It is possible to input the thrust speed [mm / sec] and timer [msec] in the first to fourth settings.

[0062] NDL1_H, NDL2_H, NDL3_H, and NDL4_H for each step can be set by one piece of data. On the setting screen 101, in the first setting, "600" is entered into NDL1_H, in the second setting, "450" ​​is entered into NDL2_H, in the third setting, "300" is entered into NDL3_H, and in the fourth setting, "150" is entered into NDL4_H.

[0063] The thrust speed and timer for each step can be set using data common to NDL1 to NDL4. On the setting screen 101, the thrust speed is set to "5" and the timer is set to "100" for the first to third settings. For the fourth setting, the thrust speed is set to "1" and the timer is set to "500".

[0064] The setting of the thrust parameters based on the values ​​input on the setting screen 101 will be described below.

[0065] (Fourth setting: First step (STEP1) setting) When "150" is input to NDL4_H, the control unit 80 sets "150" to NDL4_H_S1, and also sets "150", the same value as NDL4_H_S1, to NDL1_H_S1, NDL2_H_S1 and NDL3_H_S1.

[0066] When "1" is input to the thrust-up speed, the control unit 80 sets "1" to NDL1_VU_S1, NDL2_VU_S1, NDL3_VU_S1, and NDL4_VU_S1. Also, when "1" is input to the thrust-up speed, the control unit 80 sets "1" to NDL1_VD_S1, NDL2_VD_S1, NDL3_VD_S1, and NDL4_VD_S1.

[0067] When "500" is input to the timer, the control unit 80 sets "500" to NDL1_T_S1, NDL2_T_S1, NDL3_T_S1 and NDL4_T_S1.

[0068] (Third setting: Second step (STEP2) setting) When "300" is input to NDL3_H, the control unit 80 sets "300" to NDL3_H_S2, and also sets NDL1_H_S2 and NDL2_H_S2 to the same value "300" as NDL3_H_S2. In addition, the control unit 80 sets "150" to NDL4_H_S2, the same value as NDL4_H_S1 of the fourth setting.

[0069] When "5" is input as the thrust-up speed, the control unit 80 sets "5" to NDL1_VU_S2, NDL2_VU_S2, NDL3_VU_S2, and NDL4_VU_S2. Also, when "5" is input as the thrust-up speed, the control unit 80 sets "5" to NDL1_VD_S2, NDL2_VD_S2, NDL3_VD_S2, and NDL4_VD_S2.

[0070] When "100" is input to the timer, the control unit 80 sets "100" to NDL1_T_S2, NDL2_T_S2, NDL3_T_S2 and NDL4_T_S2.

[0071] (Second setting: Third step (STEP3) setting) When "450" ​​is input to NDL2_H, the control unit 80 sets "450" ​​to NDL2_H_S3 and also sets "450" ​​to NDL1_H_S3, the same value as NDL2_H_S3. The control unit 80 also sets "300" to NDL3_H_S3, the same value as NDL3_H_S2 of the third setting, and sets "150" to NDL4_H_S3, the same value as NDL4_H_S1 of the fourth setting.

[0072] When "5" is input as the thrust-up speed, the control unit 80 sets "5" to NDL1_VU_S3, NDL2_VU_S3, NDL3_VU_S3, and NDL4_VU_S3. Also, when "5" is input as the thrust-up speed, the control unit 80 sets "5" to NDL1_VD_S3, NDL2_VD_S3, NDL3_VD_S3, and NDL4_VD_S3.

[0073] When "100" is input to the timer, the control unit 80 sets "100" to NDL1_T_S3, NDL2_T_S3, NDL3_T_S3 and NDL4_T_S3.

[0074] (First setting: setting of the fourth step (STEP4)) When "600" is input to NDL2_H, the control unit 80 sets NDL1_H_S4 to "600." Furthermore, the control unit 80 sets NDL2_H_S4 to "450," the same value as NDL2_H_S3 of the second setting, sets NDL3_H_S4 to "300," the same value as NDL3_H_S2 of the third setting, and sets NDL4_H_S4 to "150," the same value as NDL4_H_S1 of the fourth setting.

[0075] When "5" is input as the thrust-up speed, the control unit 80 sets "5" to NDL1_VU_S4, NDL2_VU_S4, NDL3_VU_S4, and NDL4_VU_S4. Also, when "5" is input as the thrust-up speed, the control unit 80 sets "5" to NDL1_VD_S4, NDL2_VD_S4, NDL3_VD_S4, and NDL4_VD_S4.

[0076] When "100" is input to the timer, the control unit 80 sets "100" to NDL1_T_S4, NDL2_T_S4, NDL3_T_S4 and NDL4_T_S4.

[0077] As described above, when the push-up parameters are set, as shown within the dashed line BLK in FIG. 10, in the first step, blocks BL1 to BL4 are pushed up to a height of 150 μm. In the second step, blocks BL2 to BL4 are pushed up to a height of 300 μm. In the third step, blocks BL3 and BL4 are pushed up to a height of 450 μm. In the fourth step, block BL4 is pushed up to a height of 600 μm.

[0078] As shown within the dashed line BLK in FIG. 10, the control unit 80 may display on the setting screen 101 the state of the heights of the blocks BL1 to BL4 in the first to fourth steps based on the set parameters.

[0079] The operation of each block set on the setting screen 101 shown in Fig. 10 will be described with reference to Fig. 11. Fig. 11 is a diagram showing the block operation timing of the thrust-up sequence based on the setting values ​​on the setting screen shown in Fig. 10.

[0080] First, we will explain the pickup operation before the operation of each block of the push-up unit 13. The pickup operation begins when the target die D on the dicing tape DT is positioned by the push-up unit 13 and the collet 22. Once positioning is complete, a vacuum is drawn through the suction port 1314 of the push-up unit 13 and the gaps between the blocks BL1 to BL4, and the dicing tape DT is adsorbed to the upper surface of the push-up unit 13. At this time, the upper surfaces of the blocks BL1 to BL4 are at the same height (initial position) as the upper surface of the dome 1312. In this state, a vacuum is supplied from the vacuum supply source, and the collet 22 descends while drawing a vacuum toward the device surface of the die D, and lands.

[0081] First step (STEP 1): Blocks BL1 to BL4 rise to a height of 150 μm at a speed of 1 mm / sec and stop. After 100 msec has elapsed since the first step ended (blocks BL1 to BL4 stopped), the second step begins.

[0082] Second step (STEP2): Blocks BL2 to BL4 rise to a height of 300 μm at a speed of 5 mm / sec and stop. After 100 msec has elapsed since the second step ended (blocks BL2 to BL4 stopped), the third step begins.

[0083] Third step (STEP 3): Blocks BL3 and BL4 rise to a height of 450 μm at a speed of 5 mm / sec and stop. The third step is completed (100 msec has elapsed since blocks BL3 and BL4 stopped), and then the fourth step begins.

[0084] Fourth step (STEP 4): Block BL4 rises to a height of 600 μm at a speed of 5 mm / sec and stops. After 100 msec has elapsed since the fourth step ended (block BL4 stopped), collet 22 begins to rise.

[0085] [FMS2 setting example] Next, a setting example of the reverse multi-stage operation setting screen and its operation in the thrust-up unit 13 shown in Fig. 7 will be described with reference to Fig. 12. Fig. 12 is a diagram showing a setting example of the reverse multi-stage operation setting screen and the height of the block based on the setting example.

[0086] The operator operates the touch panel 83b to select the setting screen 102. The control unit 80 displays the setting screen 102 on the monitor 83a. On the setting screen 102, it is possible to input NDL2_H [μm] in the first setting, NDL3_H [μm] in the second setting, NDL4_H [μm] in the third setting, and NDL1_H [μm] in the fourth setting. It is also possible to input the thrust speed [mm / sec] and timer [msec] in the first to fourth settings.

[0087] NDL1_H, NDL2_H, NDL3_H, and NDL4_H for each step can be set by one piece of data. On the setting screen 102, in the first setting, "0" is input into NDL2_H, in the second setting, "0" is input into NDL3_H, in the third setting, "0" is input into NDL4_H, and in the fourth setting, "150" is input into NDL1_H.

[0088] The thrust speed and timer for each step can be set using data common to NDL1 to NDL4. On the setting screen 102, "5" is input for the thrust speed and "100" is input for the timer in the first to third settings. In the fourth setting, "1" is input for the thrust speed and "500" is input for the timer.

[0089] The setting of the thrust parameters based on the values ​​input on the setting screen 102 will be described below.

[0090] (Fourth setting: First step setting) When "150" is input to NDL1_H, the control unit 80 sets "150" to NDL1_H_S1, and also sets "150", the same value as NDL1_H_S1, to NDL2_H_S1, NDL3_H_S1 and NDL4_H_S1.

[0091] When "1" is input to the thrust-up speed, the control unit 80 sets "1" to NDL1_VU_S1, NDL2_VU_S1, NDL3_VU_S1, and NDL4_VU_S1. Also, when "1" is input to the thrust-up speed, the control unit 80 sets "1" to NDL1_VD_S1, NDL2_VD_S1, NDL3_VD_S1, and NDL4_VD_S1.

[0092] When "500" is input to the timer, the control unit 80 sets "500" to NDL1_T_S1, NDL2_T_S1, NDL3_T_S1 and NDL4_T_S1.

[0093] (Third setting: Second step setting) When "0" is input to NDL4_H, the control unit 80 sets "0" to NDL4_H_S2, and also sets "150", the same value as NDL1_H_S1 of the fourth setting, to NDL1_H_S2, NDL2_H_S2 and NDL3_H_S2.

[0094] When "5" is input as the thrust-up speed, the control unit 80 sets "5" to NDL1_VU_S2, NDL2_VU_S2, NDL3_VU_S2, and NDL4_VU_S2. Also, when "5" is input as the thrust-up speed, the control unit 80 sets "5" to NDL1_VD_S2, NDL2_VD_S2, NDL3_VD_S2, and NDL4_VD_S2.

[0095] When "100" is input to the timer, the control unit 80 sets "100" to NDL1_T_S2, NDL2_T_S2, NDL3_T_S2 and NDL4_T_S2.

[0096] (Second setting: Third step setting) When "0" is input to NDL3_H, the control unit 80 sets "0" to NDL3_H_S3, and also sets "150" to NDL1_H_S3 and NDL2_H_S3, the same value as NDL1_H_S1 in the fourth setting. In addition, the control unit 80 sets "0" to NDL4_H_S3, the same value as NDL4_H_S2 in the third setting.

[0097] When "5" is input as the thrust-up speed, the control unit 80 sets "5" to NDL1_VU_S3, NDL2_VU_S3, NDL3_VU_S3, and NDL4_VU_S3. Also, when "5" is input as the thrust-up speed, the control unit 80 sets "5" to NDL1_VD_S3, NDL2_VD_S3, NDL3_VD_S3, and NDL4_VD_S3.

[0098] When "100" is input to the timer, the control unit 80 sets "100" to NDL1_T_S3, NDL2_T_S3, NDL3_T_S3 and NDL4_T_S3.

[0099] (First setting: Fourth step setting) When "0" is input to NDL2_H, the control unit 80 sets "0" to NDL2_H_S4 and also sets "150" to NDL1_H_S4, the same value as NDL1_H_S1 of the fourth setting. Furthermore, the control unit 80 sets "0" to NDL3_T_S4, the same value as NDL3_H_S3 of the second setting, and also sets "0" to NDL4_H_S4, the same value as NDL4_H_S2 of the third setting.

[0100] When "5" is input as the thrust-up speed, the control unit 80 sets "5" to NDL1_VU_S4, NDL2_VU_S4, NDL3_VU_S4, and NDL4_VU_S4. Also, when "5" is input as the thrust-up speed, the control unit 80 sets "5" to NDL1_VD_S4, NDL2_VD_S4, NDL3_VD_S4, and NDL4_VD_S4.

[0101] When "100" is input to the timer, the control unit 80 sets "100" to NDL1_T_S4, NDL2_T_S4, NDL3_T_S4 and NDL4_T_S4.

[0102] As described above, when the push-up parameters are set, in the first step, blocks BL1 to BL4 are pushed up to a height of 150 μm, as shown within the dashed line BLK in FIG. 11. In the second step, block BL1 is lowered to a height of 0 μm. In the third step, block BL2 is lowered to a height of 0 μm. In the fourth step, block BL3 is lowered to a height of 0 μm.

[0103] As shown within the dashed line BLK in FIG. 12, the control unit 80 may display on the setting screen 102 the state of the heights of the blocks BL1 to BL4 in the first to fourth steps based on the set parameters.

[0104] The operation of the blocks set on the setting screen 102 shown in Fig. 12 will be described with reference to Fig. 13. Fig. 13 is a diagram showing the timing of block operation in the thrust-up sequence based on the setting values ​​on the setting screen shown in Fig. 12.

[0105] First step (STEP 1): Blocks BL1 to BL4 rise to a height of 150 μm at a speed of 1 mm / sec and stop. After 500 msec has elapsed since the first step ended (blocks BL1 to BL4 stopped), the second step begins.

[0106] Second step (STEP2): Block BL1 descends to a height of 0 μm at a speed of 5 mm / sec and stops. After 100 msec has elapsed since the second step ended (block BL1 stopped), the third step begins.

[0107] Third step (STEP 3): Block BL2 descends to a height of 0 μm at a speed of 5 mm / sec and stops. After 100 msec has elapsed since the third step ended (block BL2 stopped), the fourth step begins.

[0108] Fourth step (STEP 4): Block BL3 descends to a height of 0 μm at a speed of 5 mm / sec and stops. After 100 msec has elapsed since the fourth step ended (block BL3 stopped), collet 22 begins to rise.

[0109] [Example of FMS2 triple-block configuration] An example of settings on the setting screen 102 for the reverse multi-stage operation in the 3BLK type thrust-up unit 13 shown in Fig. 8 and the operation thereof will be described with reference to Fig. 14. Fig. 14 is a diagram showing an example of settings on the setting screen for the reverse multi-stage operation in a three-stage block and the height of the block based on the settings.

[0110] The 3BLK type thrust unit 13 does not use NDL2. Therefore, the operator inputs "150" for NDL2_H in the first setting, which is the same value as NDL1_H in the fourth setting, inputs "5" for the thrust speed, and inputs "0" for the timer. Here, the same values ​​as those on the setting screen 102 shown in FIG. 12 are input for the second to fourth settings. With the second to fourth settings, the control unit 80 sets the same thrust parameters as those of the reverse multi-stage operation thrust unit shown in FIG. 12, except for the parameters related to NDL2.

[0111] The following describes the setting of the thrust parameters based on the values ​​entered on the setting screen 102. Note that since NDL2_H in the first setting has the same value as NDL1_H in the fourth setting and the timer in the first setting is "0", this indicates that NDL2 is not used, and the control unit 80 sets the parameters related to NDL2 to "0".

[0112] [Example of setting two-stage blocks in FMS2] An example of settings on the setting screen for the reverse multi-stage operation in the 2BLK type thrust-up unit 13 and the operation thereof will be described with reference to Fig. 15. Fig. 15 is a diagram showing an example of settings on the setting screen for the reverse multi-stage operation in a two-stage block and the height of the block based on the settings.

[0113] The 2BLK type thrust unit 13 does not use NDL2 and NDL3. Therefore, the operator inputs "150" for NDL2_H in the first setting, the same value as NDL1_H in the fourth setting, inputs "5" for the thrust speed, and inputs "0" for the timer. The operator inputs "150" for NDL3 in the second setting, the same value as NDL1_H in the fourth setting, inputs "5" for the thrust speed, and inputs "0" for the timer. Here, the same values ​​as those in the setting screen shown in FIG. 12 are input for the third and fourth settings. With the third and fourth settings, the control unit 80 sets the same thrust parameters as the reverse multi-stage thrust unit shown in FIG. 12, except for the parameters related to NDL2 and NDL3.

[0114] The following describes the setting of the thrust parameters based on the values ​​entered on the setting screen 102. Note that NDL2_H in the first setting has the same value as NDL1_H in the fourth setting, and the timer in the first setting is "0," which indicates that NDL2 is not used, and the control unit 80 sets the parameters related to NDL2 to "0." Also, NDL3_H in the second setting has the same value as NDL1_H in the fourth setting, and the timer in the second setting is "0," which indicates that NDL3 is not used, and the control unit 80 sets the parameters related to NDL3 to "0."

[0115] [Another example of setting four-stage blocks in FMS2] Another setting example of the setting screen 102 for the reverse multi-stage operation in the thrust-up unit 13 shown in Fig. 7 and its operation will be described with reference to Fig. 16. Fig. 16 is a diagram showing another setting example of the setting screen for the reverse multi-stage operation in a four-stage block and the block height based on that setting example.

[0116] The setting screen 102 shown in FIG. 16 is configured such that, by option setting, NDL4_H [μm] can be input in the fourth setting on the setting screen 102 shown in FIG.

[0117] The input of the thrust-up speed and timer is the same as that on the setting screen 102 shown in Fig. 11. The input of NDL1_H to NDL4_H for the first to third settings is the same as that on the setting screen 102 shown in Fig. 11. In the fourth setting, "150" is input into NDL1_H and "75" is input into NDL4_H. In the fourth setting, "1" is input into the thrust-up speed and "500" is input into the timer.

[0118] The thrust parameter settings based on the values ​​input in the first to third settings on the setting screen 102 are the same as those in Fig. 12. The parameter settings based on the fourth setting will be described below.

[0119] (Fourth setting: First step setting) When "150" is input to NDL1_H, "150" is set to NDL1_H_S1, and the same value as NDL1_H_S1, "150", is set to NDL_H2_S1 and NDL3_H_S1. When "75" is input to NDL4_H, the control unit 80 sets "75" to NDL4_H_S1.

[0120] When "1" is input to the thrust-up speed, the control unit 80 sets "1" to NDL1_VU_S1, NDL2_VU_S1, NDL3_VU_S1, and NDL4_VU_S1. Also, when "1" is input to the thrust-up speed, the control unit 80 sets "1" to NDL1_VD_S1, NDL2_VD_S1, NDL3_VD_S1, and NDL4_VD_S1.

[0121] When "500" is input to the timer, the control unit 80 sets "500" to NDL1_T_S1, NDL2_T_S1, NDL3_T_S1 and NDL4_T_S1.

[0122] As described above, when the push-up parameters are set, in the first step, blocks BL1 to BL3 are pushed up to a height of 150 μm, and the fourth block BL4 is pushed up to a height of 75 μm, as shown within the dashed line BLK in Fig. 16. Since the first to third settings are the same as those on the setting screen 102 shown in Fig. 11, the second to fourth steps operate in the same way as on the setting screen 102 shown in Fig. 11.

[0123] As shown within the dashed line BLK in FIG. 16, the control unit 80 may display on the setting screen 102 the state of the heights of the blocks BL1 to BL4 in the first to fourth steps based on the set parameters.

[0124] [FMS3 setting example] Next, a setting example of the general-purpose operation setting screen of the push-up unit 13 shown in Fig. 7 and its operation will be described with reference to Fig. 16. Fig. 17 is a diagram showing a setting example of the general-purpose operation setting screen for a four-tier block and the block height based on the setting example.

[0125] The operator operates the touch panel 83b to select the setting screen 103. The control unit 80 displays the setting screen 103 on the monitor 83a. On the setting screen 103, NDL1_H [μm], NDL2_H [μm], NDL3_H [μm], NDL4_H [μm], the thrust-up speed [mm / sec], and the thrust-up speed (downward) [mm / sec] can be input for each step. Also, NDL1_T [msec], NDL2_T [msec], NDL3_T [msec], and NDL4_T [msec] can be input for each step. The upward thrust-up speed (VU) and the downward thrust-up speed (VD) are set to values ​​common to NDL1 to NDL4.

[0126] Setting screen 103 is different from setting screen 101 and setting screen 102 in that it requires input of settings for all items in each step. The thrust parameters set by inputting on setting screen 103 shown in Fig. 16 are the same as the thrust parameters set by inputting on setting screen 102 shown in Fig. 11.

[0127] [Other setting examples for FMS3] Another setting example of the setting screen 103 for the reverse multi-stage operation in the thrust-up unit 13 shown in Fig. 7 and its operation will be described with reference to Fig. 18. Fig. 18 is a diagram showing another setting example of the setting screen for the reverse multi-stage operation in a four-stage block and the block height based on that setting example.

[0128] In the first setting, "300" is input into NDL1_H, and "0" is input into NDL2_H to NDL4_H. "5" is input into the upward thrust speed (VU), and "5" is input into the downward thrust speed (VD). "100" is input into NDL1_T to NDL4_T. In the second setting, "300" is input into NDL1_H to NDL4_H. "5" is input into VU, and "5" is input into VD. "160" is input into NDL1_T, "160" into NDL2_T, "130" into NDL3_T, and "100" into NDL4_T.

[0129] The setting of the thrust parameters based on the values ​​input on the setting screen 103 will be described below.

[0130] (Second setting: First step setting) When "300" is input to NDL1_H to NDL4_H, the control unit 80 sets "300" to NDL1_H_S1, NDL2_H_S1, NDL3_H_S1 and NDL4_H_S1.

[0131] When "5" is input to VU, the control unit 80 sets "5" to NDL1_VU_S1, NDL2_VU_S1, NDL3_VU_S1, and NDL4_VU_S1. When "5" is input to VD, the control unit 80 sets "5" to NDL1_VD_S1, NDL2_VD_S1, NDL3_VD_S1, and NDL4_VD_S1.

[0132] When "160" is input to NDL1_T, "160" to NDL2_T, "130" to NDL3_T, and "100" to NDL4_T, the control unit 80 sets "160" to NDL1_T_S1, "160" to NDL2_T_S1, "130" to NDL3_T_S1, and "100" to NDL4_T_S1.

[0133] (First setting: Second step setting) When "300" is input to NDL1_H, the control unit 80 sets NDL1_H_S2 to "300." When "0" is input to NDL2_H to NDL4_H, the control unit 80 sets "0" to NDL2_H_S2, NDL3_H_S2, and NDL4_H_S2.

[0134] When "5" is input to VU, the control unit 80 sets "5" to NDL1_VU_S2, NDL2_VU_S2, NDL3_VU_S2, and NDL4_VU_S2. When "5" is input to VD, the control unit 80 sets "5" to NDL1_VD_S2, NDL2_VD_S2, NDL3_VD_S2, and NDL4_VD_S2.

[0135] When "100" is input to NDL1_T, "100" to NDL2_T, "100" to NDL3_T, and "100" to NDL4_T, the control unit 80 sets "100" to NDL1_T_S2, "100" to NDL2_T_S2, "100" to NDL3_T_S2, and "100" to NDL4_T_S2.

[0136] As described above, when the push-up parameters are set, in the first step, blocks BL1 to BL4 are pushed up to a height of 300 μm, as shown within the dashed line BLK in Fig. 17. In the second step, blocks BL1, BL2, and BL3 are lowered in this order.

[0137] As shown within the dashed line BLK in FIG. 18, the control unit 80 may display on the setting screen 103 the state of the heights of the blocks BL1 to BL4 in the first to fourth steps based on the set parameters.

[0138] The operation of the blocks set on the setting screen 103 shown in Fig. 18 will be described with reference to Fig. 19. Fig. 19 is a diagram showing the block operation timing of the thrust-up sequence based on the setting values ​​on the setting screen shown in Fig. 18.

[0139] First step (STEP 1): Blocks BL1 to BL4 rise to a height of 300 μm at a speed of 5 mm / sec and stop. 100 msec after block BL1 stops (end of first step), block BL1 proceeds to the second step. 130 msec after block BL2 stops (end of first step), block BL2 proceeds to the second step. 160 msec after block BL3 stops (end of first step), block BL3 proceeds to the second step. 160 msec after block BL4 stops (end of first step), block BL4 proceeds to the second step.

[0140] Second step (STEP2): Block BL1 descends at a speed of 5 mm / sec to a height of 0 μm and stops. Block BL2 descends at a speed of 5 mm / sec to a height of 0 μm and stops. Block BL3 descends at a speed of 5 mm / sec to a height of 0 μm and stops. Block BL4 maintains a height of 300 μm.

[0141] The point at which the second step ends (the slowest block among blocks BL1 to BL3 stops) becomes the starting point of NDL1_T to NDL4_T of the first setting (second step). After 100 msec has elapsed since the second step ends, the collet 22 begins to rise.

[0142] According to this embodiment, at least one of the following effects is achieved.

[0143] (a) Multiple thrust parameters can be set by entering one setting item on the setting screen, which reduces the amount of input required.

[0144] (b) Parameters for all blocks or steps can be set by inputting one parameter for one block or step, which reduces the time and effort required for input and reduces errors.

[0145] (c) By providing a setting screen for a specific thrust sequence, it is possible to limit the input items.

[0146] (d) (c) above makes it easy to convert the input setting value into a thrust parameter.

[0147] (e) The above (c) makes it possible to reduce the effort required for input.

[0148] The disclosure made by the present inventors has been specifically described above based on the embodiments, but it goes without saying that the present disclosure is not limited to the above embodiments and can be modified in various ways.

[0149] In the embodiment, an example in which there are four drive shafts has been described, but the number may be more or less than four.

[0150] In the embodiment, the push-up unit is explained as being a block, but it may be a needle.

[0151] In the embodiment, an example in which a die attach film is used has been described, but a preform portion for applying adhesive to the substrate may be provided, and the die attach film may not be used.

[0152] In the embodiment, a die bonder has been described in which a die is picked up from a wafer supply unit by a pickup head and placed on an intermediate stage, and the die placed on the intermediate stage is bonded to a substrate by a bonding head. However, the present invention is not limited to this and can be applied to any die bonding apparatus that picks up a die from a wafer supply unit.

[0153] For example, the present invention can be applied to a die bonder that does not have an intermediate stage and a pickup head and that bonds dies from a wafer supply unit to a substrate with a bonding head.

[0154] It is also applicable to a flip chip bonder that does not have an intermediate stage, picks up a die from a wafer supply unit, rotates the die pickup head upward, and delivers the die to the bonding head, which then bonds the die to a substrate.

[0155] In the embodiment, a die bonder has been described as an example, but the present invention can also be applied to semiconductor manufacturing equipment that places a picked-up die on a tray. [Explanation of symbols]

[0156] 1. Die bonder (semiconductor manufacturing equipment) 13 Thrust unit BL1 to BL4 blocks 80 Control unit 83a Monitor (display device)

Claims

1. a push-up unit having a plurality of blocks, each of which can move up and down independently; a display device that displays a setting screen in which the push-up sequence of the plurality of blocks is configured with a plurality of steps and the height of the plurality of blocks can be input for each step; a control unit configured to be able to set a plurality of thrust parameters by inputting one of the setting items on a setting screen, and to control the operations of the plurality of blocks based on the set plurality of thrust parameters; A semiconductor manufacturing device comprising:

2. 2. The semiconductor manufacturing apparatus of claim 1, the display device is configured to display a setting screen for inputting a first thrust sequence and a setting screen for inputting a second thrust sequence; the first thrust-up sequence is a multi-stage operation sequence in which all the blocks are thrust up to a predetermined height and the inner blocks are thrust up sequentially, The second push-up sequence is a reverse multi-stage operation sequence in which all the blocks are pushed up to a predetermined height and then sequentially lowered starting from the outermost block.

3. 3. The semiconductor manufacturing apparatus according to claim 2, The setting screen for inputting the first thrust sequence allows the height of the outermost block to be input in the input area for the first step, and the height of the inner block adjacent to the outermost block to be input in the input area for the second step of the semiconductor manufacturing device.

4. 3. The semiconductor manufacturing apparatus according to claim 2, The setting screen for inputting the second thrust sequence is configured so that the height of the innermost block can be input in the input area for the first step, and the height of the outermost block can be input in the input area for the second step.

5. 3. The semiconductor manufacturing apparatus according to claim 2, The display device is configured to display a setting screen on which the first thrust-up sequence and the second thrust-up sequence can be input.

6. 5. The semiconductor manufacturing apparatus according to claim 1, The semiconductor manufacturing apparatus is configured such that the control unit can set the push-up parameters for the heights of all the blocks in each step based on an input of the height of one of the blocks in each step on the setting screen.

7. 6. The semiconductor manufacturing apparatus according to claim 1, The setting screen is configured so that the push-up speed of the plurality of blocks can be input for each step in the semiconductor manufacturing apparatus.

8. 6. The semiconductor manufacturing apparatus according to claim 1, The setting screen is configured to allow input for each timer step, which is the time from when the lifting or lowering of the plurality of blocks has finished to when the lifting or lowering of the plurality of blocks in the next step begins.

9. 5. The semiconductor manufacturing apparatus according to claim 4, The setting screen is configured such that the height of the outermost block can be input in the input area for the first step.

10. A push-up method for semiconductor manufacturing equipment, the method comprising: a push-up unit having a plurality of blocks, each of the plurality of blocks being capable of moving up and down independently; and a display device that displays a setting screen in which a push-up sequence for the plurality of blocks is configured with a plurality of steps and heights of the plurality of blocks can be input for each step, the method comprising: setting a plurality of thrust parameters based on input of one of the setting items on the setting screen; controlling the operations of the plurality of blocks based on the set parameters; A thrusting method including:

11. a step of peeling a die from a wafer held by a wafer ring and picking up the die by the push-up method of claim 10; bonding the picked-up die to a substrate; A method for manufacturing a semiconductor device comprising:

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