Microreactor

Abstract

To provide a microreactor allowing easy control of reactions.SOLUTION: A microreactor 10 comprises a flow path-forming section 60 constituting a flow path P and a heat-generating section 30, the flow path-forming section 60 having a heating area AR1 heated by the heat-generating section 30 and a non-heating area AR2 not heated by the heat-generating section 30.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a microreactor. [Background technology]

[0002] The microreactor disclosed in Patent Document 1 has an inlet for liquid A, an inlet for liquid B, and a reaction liquid outlet, which are configured as flow paths. Liquid A and liquid B are mixed at the confluence of the flow paths to form a mixed granule. The reaction is promoted by irradiating the mixed granule with a pulsed laser. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-297668 Summary of the Invention [Problem to be solved by the invention]

[0004] In microreactors, a heater is used to heat the reaction mixture. However, conventional heaters have a relatively large heat capacity, which means that they heat a wide area, making it difficult to achieve localized heating. This results in heating areas other than the necessary areas in the flow path, making it difficult to control the reaction.

[0005] The present disclosure provides a microreactor that allows easy reaction control. [Means for solving the problem]

[0006] The microreactor of the present disclosure comprises: A microreactor including a flow path forming part that forms a flow path and a heat generating part, The flow path configuration portion has a heated region that is heated by the heat generating portion and a non-heated region that is not heated by the heat generating portion. [Effects of the Invention]

[0007] The microreactor according to the present disclosure facilitates reaction control. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a side cross-sectional view that schematically shows a microreactor according to a first embodiment. [Figure 2] FIG. 2 is an explanatory diagram illustrating a flow path configuration section of the microreactor of FIG. [Figure 3] FIG. 3 is a process diagram illustrating the manufacturing process of the microreactor of FIG. [Figure 4] FIG. 4 is a process diagram illustrating the manufacturing process of the microreactor following FIG. [Figure 5] FIG. 5 is a process diagram illustrating the microreactor manufacturing process following FIG. [Figure 6] FIG. 6 is a process diagram illustrating the manufacturing process of the microreactor following FIG. [Figure 7] FIG. 7 is a side cross-sectional view schematically showing a microreactor according to the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] In the following, embodiments of the present disclosure are listed and illustrated. [1] A microreactor comprising a flow path forming part that forms a flow path and a heat generating part, The flow path configuration section is a microreactor having a heated region that is heated by the heat generating section and a non-heated region that is not heated by the heat generating section.

[0010] With this configuration, the heat generating section can heat only the heating region in the flow path forming section, which makes it possible to heat only the necessary portion (heating region) in the flow path forming section, making it easier to control the reaction.

[0011] [2] The microreactor according to [1], wherein the difference between the maximum temperature in the heated region and the maximum temperature in the non-heated region is 40°C or more.

[0012] With this configuration, it is possible to provide a heated region and a non-heated region with a desired temperature difference (maximum temperature difference of 40° C. or more) in the flow path configuration section.

[0013] [3] A base on which the heat generating portion is disposed, the substrate has an opening; the heat generating portion is provided within the opening, The microreactor according to [1] or [2], wherein the opening is provided on the opposite side of the base from the flow channel.

[0014] With this configuration, it is possible to suppress the escape of heat to the opposite side of the flow path, compared to a configuration in which the heat generating portion is not exposed (such as a configuration in which the heat generating portion is buried in the base).

[0015] [4] The microreactor according to any one of [1] to [3], further comprising a heat dissipation section that dissipates heat from the non-heated region.

[0016] With this configuration, heat transferred from the heat generating portion to the non-heated area can be released, making it easier to maintain the non-heated area at a desired temperature (room temperature).

[0017] First Embodiment 1. Configuration of the microreactor 10 A microreactor 10 according to a first embodiment of the present disclosure will be described below with reference to Fig. 1. In the following description, for convenience of explanation, the up-down direction shown in Fig. 1 is defined as the up-down direction, but it does not have to coincide with the up-down direction in the actual arrangement of the microreactor 10.

[0018] The microreactor 10 is a reactor having a microstructure on the order of micrometers (e.g., several tens of μm to several hundreds of μm). The microreactor 10 includes a microchannel 110 and a microheater 120. The microreactor 10 has a configuration in which the microchannel 110 and the microheater 120 are integrally combined.

[0019] The microreactor 10 includes a flow path configuration unit 60 that configures a flow path P, and a heat generating unit 30. The flow path P is the space inside the flow path configuration unit 60. In other words, the flow path P is a space surrounded by the flow path configuration unit 60. The microreactor 10 is a flow-type device that performs a chemical reaction within the flow path P. The flow path configuration unit 60 is disposed above the heat generating unit 30. The reaction is promoted by heating a portion of the flow path P with the heat generating unit 30.

[0020] The cross-sectional shape of the flow path P perpendicular to the axis thereof is, for example, a rectangle or a trapezoid. The flow path forming portion 60 is a wall portion that surrounds the axis of the flow path P. The thickness (wall thickness) of the flow path forming portion 60 is, for example, the same size as the width of the flow path P.

[0021] The flow path configuration unit 60 has a first supply unit 61, a second supply unit 62, a mixing unit 63, and a discharge unit 64. In the flow path configuration unit 60, the first supply unit 61 and the second supply unit 62, the mixing unit 63, and the discharge unit 64 are arranged in this order from the upstream side.

[0022] The first supply section 61 and the second supply section 62 are sections into which raw materials are introduced. The mixing section 63 is a section downstream of the junction of the first supply section 61 and the second supply section 62. The discharge section 64 is a section into which a product produced by the reaction of the various raw materials is discharged.

[0023] 1-1. Configuration of the microheater 120 The microheater 120 includes a base 20, a heat generating portion 30, leads 32, pads , a second insulating layer 40, and a third insulating layer .

[0024] The base 20 includes a first semiconductor layer 21, a first insulating layer 22, and a second semiconductor layer 23. The base 20 is formed by stacking the first semiconductor layer 21, the first insulating layer 22, and the second semiconductor layer 23 in this order. The base 20 is preferably an SOI (Silicon on Insulator) substrate. The first semiconductor layer 21 is, for example, a silicon (Si) substrate. The first insulating layer 22 is, for example, a silicon oxide (SiO2) layer. The first insulating layer 22 is, for example, a buried oxide (BOX) layer in an SOI substrate. The second semiconductor layer 23 is a silicon (Si) layer.

[0025] The base 20 has an opening 20A formed therethrough so as to open to both the top and bottom surfaces. The opening 20A is provided on the opposite side of the base 20 from the flow path P. The opening 20A is, for example, rectangular in plan view. The shape of the opening 20A may also be other shapes such as circular. The opening 20A has, for example, a shape in which the cross-sectional area perpendicular to the up-down direction increases downward. A heat generating portion 30, which will be described later, and a portion of the second insulating layer 40 are exposed within the opening 20A.

[0026] The second insulating layer 40 is formed to cover the upper surface of the base 20 (the surface on the second semiconductor layer 23 side). The second insulating layer 40 covers the opening 20A of the base 20 from above. A diaphragm film is formed by the portion of the second insulating layer 40 that overlaps the opening 20A and the heat generating portion 30, which will be described later. The material of the second insulating layer 40 is not particularly limited as long as it has sufficient insulating properties. The second insulating layer 40 preferably has a layered structure in which a silicon oxide (SiO2) layer and a silicon nitride (SiN) layer are layered in this order.

[0027] The third insulating layer 50 is formed so as to cover the lower surface of the base 20 (the surface on the first semiconductor layer 21 side). The material of the third insulating layer 50 is not particularly limited as long as it has sufficient insulating properties. The third insulating layer 50 preferably has a layered structure in which a silicon oxide (SiO2) layer and a silicon nitride (SiN) layer are layered in this order (a structure in which a silicon oxide layer and a silicon nitride layer are arranged in this order from top to bottom).

[0028] The heating portion 30 is formed so as to be exposed within the opening 20A of the base 20. The heating portion 30 is arranged within the opening region of the upper opening of the opening 20A of the base 20. The heating portion 30 is in contact with the lower surface of the second insulating layer 40. The heating portion 30 protrudes downward from the lower surface of the second insulating layer 40. The heating portion 30 is composed of a resistor that generates heat when electricity is applied. The heating portion 30 generates heat when current flows through leads 32 and pads 34, which will be described later. The heating portion 30 is preferably formed by doping a silicon layer with boron (B).

[0029] The heat generating section 30 has, for example, a plurality of components (four components in FIG. 1) arranged in a direction (horizontal direction) perpendicular to the vertical direction. The heat generating section 30 may have, for example, a rectangular spiral shape or a folded shape in a plan view. Although not shown, leads 32, which will be described later, are connected to the heat generating section 30. The second semiconductor layer 23, the heat generating section 30, and the leads 32 are included in the same layer.

[0030] The heat generating portion 30 is not in contact with other components in the horizontal direction. In other words, there is no adjacent portion 31, which will be described later. For example, in a configuration in which a silicon layer (see adjacent portion 31 in FIG. 5(B)) is adjacent to the heat generating portion 30, there is a concern that heat will escape through this silicon layer. Therefore, by not having the heat generating portion 30 adjacent to the silicon layer (adjacent portion 31), the heat conduction efficiency can be improved.

[0031] The leads 32 are embedded in the second semiconductor layer 23. The leads 32 are made of the same material as the heat generating portion 30, for example.

[0032] The pad 34 is embedded in the second insulating layer 40. The pad 34 is laminated on the lead 32. Although not shown, the pad 34 is connected to a wiring (not shown) for supplying power from an external circuit. The material of the pad 34 is not particularly limited as long as it has sufficient conductivity. The material of the pad 34 is, for example, gold (Au), platinum (Pt), etc. The pad 34 may have a two-layer structure, for example, consisting of an upper layer of gold (Au) and a lower layer of titanium (Ti).

[0033] 1-2. Configuration of the microchannel 110 The microchannel 110 is laminated between a pair of pads 34 on the second insulating layer 40. The microchannel 110 is made of, for example, a silicon layer, glass, or metal (stainless steel, etc.). The microchannel 110 has, for example, a rectangular parallelepiped shape in a plan view. The microchannel 110 has a first supply unit 61, a second supply unit 62, a channel side component 63A (described later), and a discharge unit 64.

[0034] The first supply section 61 extends in the vertical direction. The upstream end of the first supply section 61 is open upward. The other end of the first supply section 61 is connected to the upstream end of the mixer 63 (a channel-side component 63A described later).

[0035] The second supply section 62 extends vertically in parallel to the first supply section 61. The upstream end of the second supply section 62 is open upward. The other end of the second supply section 62 is connected to a position slightly downstream of the upstream end of the mixing section 63 (a channel-side component 63A described later).

[0036] The channel-side component 63A is disposed at the lower end of the microchannel 110. The channel-side component 63A extends horizontally (for example, in the direction in which the multiple components of the heat generating unit 30 are arranged). The lower end of the channel-side component 63A is open downward.

[0037] The mixed portion 63 is configured by integrating a channel-side constituent portion 63A and an insulating layer-side constituent portion 63B of the second insulating layer 40. The insulating layer-side constituent portion 63B is a portion of the second insulating layer 40 that overlaps with the channel-side constituent portion 63A in the vertical direction. The thickness of the insulating layer-side constituent portion 63B is the same as the thickness of the second insulating layer 40, for example. The channel-side constituent portion 63A constitutes the upper end portion of the mixed portion 63. The insulating layer-side constituent portion 63B constitutes the lower end portion of the mixed portion 63.

[0038] The discharge section 64 extends in the vertical direction. The upstream end of the discharge section 64 is connected to the downstream end of the mixing section 63 (a channel-side component 63A described later). The downstream end of the discharge section 64 is open upward.

[0039] 1-3. Detailed configuration of flow path configuration unit 60 2, the flow path configuration unit 60 has a heated area AR1 that is heated by the heat generating unit 30, and a non-heated area AR2 that is not heated by the heat generating unit 30. The heated area AR1 is an area where the temperature rises due to heat transferred from the heat generating unit 30. The non-heated area AR2 is an area where heat is not transferred from the heat generating unit 30, or an area where the temperature does not rise because heat is released even if transferred from the heat generating unit 30.

[0040] The heating region AR1 is a central portion of the flow path configuration section 60 (more specifically, the mixing section 63) in the flow direction. The heating region AR1 is a portion of the mixing section 63 that is downstream from the second supply section 62 and separated upstream from the discharge section 64. Specifically, the heating region AR1 includes a portion of the mixing section 63 that overlaps with the heat generating section 30 in the vertical direction. More specifically, the heating region AR1 is an integrated portion that is composed of the portions that overlap with the end components of the four components of the heat generating section 30 in the vertical direction and the portions therebetween.

[0041] The non-heated area AR2 is a portion of the flow path configuration section 60 other than the heated area AR1. The non-heated area AR2 is a portion on the upstream end side and a portion on the downstream end side of the flow path configuration section 60. Specifically, the non-heated area AR2 is a portion of the mixing section 63 that does not overlap with the heat generating section 30 in the vertical direction. More specifically, the non-heated area AR2 is the first supply section 61, the second supply section 62, the portions on the upstream end side and the downstream end side of the mixing section 63, and the discharge section 64.

[0042] The difference between the maximum temperature in the heated region AR1 and the maximum temperature in the non-heated region AR2 is preferably 40°C or more, more preferably 45°C or more, even more preferably 50°C or more, and particularly preferably 60°C or more. The maximum temperature in the heated region AR1 is, for example, the maximum temperature of the surface facing the flow path P in the heated region AR1 (mixing section 63). The maximum temperature in the heated region AR1 is, for example, about 65°C. The maximum temperature in the non-heated region AR2 is, for example, about 23°C.

[0043] 2. Manufacturing method of the microreactor 10 A method for manufacturing the microreactor 10 embodying the present disclosure will be described mainly with reference to Figures 3 to 6. The method for manufacturing the microreactor 10 involves the following steps.

[0044] 2-1. Formation of the microheater 120 2-1-1. Formation of the substrate As shown in FIG. 3A, a base 20 is prepared. For example, when the base 20 is configured as an SOI substrate, first, two silicon substrates cleaned with a cleaning solution are prepared. Then, an oxide film is formed on at least one of the silicon substrates, and the two substrates are bonded together. Thereafter, the bonded substrate is ground, polished, etc., to form an SOI substrate (base 20) in which a first semiconductor layer 21, a first insulating layer 22, and a second semiconductor layer 23 are laminated in this order.

[0045] 1-2-2. Formation of heat generating part 3(B), a process is performed in which insulating layers (third insulating layer 50, fourth insulating layer 51) are formed on both the upper and lower surfaces of the base 20. Specifically, the fourth insulating layer 51 is formed on the upper surface of the base 20 (the surface on the second semiconductor layer 23 side), and the third insulating layer 50 is formed on the lower surface of the base 20 (the surface on the first semiconductor layer 21 side). The third insulating layer 50 and the fourth insulating layer 51 each have a two-layer structure, for example, with an inner layer made of silicon oxide (SiO2) and an outer layer made of silicon nitride (SiN). For example, the inner layer made of silicon oxide (SiO2) is formed by oxidizing the first semiconductor layer 21 and the second semiconductor layer 23. For example, the outer layer made of silicon nitride (SiN) is formed by low-pressure CVD (LPCVD).

[0046] 3(C), the fourth insulating layer 51 is patterned by photolithography and etching, and impurities are doped into a portion of the second semiconductor layer 23 to form the heat generating portion 30 and the leads 32. Specifically, a mask is first formed on the fourth insulating layer 51 by photolithography, and openings 51A and 51B are formed in the fourth insulating layer 51 by etching. For example, reactive ion etching (RIE) can be used for the etching. The opening 51A is an opening for forming the heat generating portion 30. The opening 51B is an opening for forming the leads 32. Boron (B) is preferably used as the impurity to be doped into the second semiconductor layer 23. The openings 51A and 51B of the fourth insulating layer 51 are doped with impurities to form the heat generating portion 30 and the leads 32 in a portion of the second semiconductor layer 23.

[0047] 3(D), the fourth insulating layer 51 is removed by, for example, wet etching.

[0048] 1-2-3. Formation of the second insulating film Next, as shown in FIG. 4(A), a step of forming a second insulating layer 40 on the upper surface of the base 20 (the surface on the second semiconductor layer 23 side) is performed. The second insulating layer 40 has a two-layer structure consisting of a lower layer of silicon oxide (SiO2) and an upper layer of silicon nitride (SiN). In this case, a silicon oxide layer and a silicon nitride layer are stacked in this order on the second semiconductor layer 23. Specifically, the lower layer of silicon oxide (SiO2) is formed by oxidizing the second semiconductor layer 23 (including the heating portion 30 and the leads 32). Thereafter, an upper layer of silicon nitride (SiN) is formed on the lower layer of silicon oxide (SiO2) by low-pressure CVD (LPCVD).

[0049] 1-2-4. Pad formation Next, as shown in FIG. 4(B), the second insulating layer 40 is patterned by photolithography and etching. Specifically, first, a mask is formed on the second insulating layer 40 by photolithography, and openings 40A are formed in the second insulating layer 40 by etching. For example, reactive ion etching (RIE) can be used for the etching. The openings 40A are openings for forming the pads 34. The leads 32 are exposed from the openings 40A. The mask is then removed.

[0050] Next, as shown in FIG. 4(C), the pad 34 is formed so as to be embedded in the opening 40A. The pad 34 is formed, for example, by DC (Direct Current) sputtering. The pad 34 is made of, for example, gold (Au). The pad 34 can be formed into the shape shown in FIG. 4(C) by, for example, depositing gold (Au) or the like on the second insulating layer 40 (including the inside of the opening 40A) and then using photolithography and etching.

[0051] 1-2-5. Etching of the first semiconductor layer 4(D), an opening 50A is formed in a part of the third insulating layer 50. The opening 50A is formed in a region of the third insulating layer 50 that overlaps with the heat generating portion 30 in the vertical direction. The opening 50A is formed by, for example, photolithography and etching. For the etching, for example, reactive ion etching (RIE) can be used.

[0052] 5A, a process is performed in which a portion of the first semiconductor layer 21 (a portion that overlaps with the heat generating portion 30 in the vertical direction) is etched until the first insulating layer 22 is exposed. Specifically, the first semiconductor layer 21 is etched through the opening 50A in the third insulating layer 50 to form an opening 21A in the first semiconductor layer 21. The opening 21A has a shape in which, for example, the cross-sectional area perpendicular to the vertical direction increases downward. The first semiconductor layer 21 can be etched by anisotropic etching, for example. The anisotropic etching is wet etching using an alkaline aqueous solution such as potassium hydroxide (KOH), hydrazine, ethylenediamine, or tetramethylammonium hydroxide (TMAH).

[0053] 1-2-6. Etching of the first insulating layer 5(B), a process is performed in which a portion of the exposed first insulating layer 22 is etched until an adjacent portion 31 adjacent to the heat generating portion 30 in the second semiconductor layer 23 is exposed. Specifically, the first insulating layer 22 is etched through the opening 21A in the first semiconductor layer 21 to form an opening 22A in the first insulating layer 22. Wet etching using, for example, hydrofluoric acid can be used to etch the first insulating layer 22. The heat generating portion 30 and the adjacent portion 31 adjacent to the heat generating portion 30 are exposed from the opening 22A in the first insulating layer 22. The adjacent portion 31 includes a portion sandwiched between components of the heat generating portion 30 and a portion disposed between the heat generating portion 30 and the lead 32. For example, the vertical thickness of the heat generating portion 30 and the vertical thickness of the adjacent portion 31 are the same.

[0054] 1-2-7. Etching of adjacent areas Next, as shown in FIG. 5(C), a process of etching the adjacent portion 31 exposed from the opening 22A is performed. Specifically, the adjacent portion 31 of the second semiconductor layer 23 is etched through the opening 22A of the first insulating layer 22 to remove the adjacent portion 31 adjacent to the heat generating portion 30. The adjacent portion 31 can be etched, for example, by anisotropic etching. The anisotropic etching is wet etching using an alkaline solution such as potassium hydroxide (KOH), hydrazine, ethylenediamine, or tetramethylammonium hydroxide (TMAH). For example, if the heat generating portion 30 is configured as a silicon (Si) layer doped with boron (B), the etching rate of the adjacent portion 31 is approximately 1 / 100 to 1 / 1000 times lower than that of the silicon (Si) layer. In this manner, the microheater 120 is formed.

[0055] 2-2. Formation of microchannel 110 6(A), a substrate 110A of the microchannel 110 is prepared, and a channel-side constituent portion 63A is formed. For example, the channel-side constituent portion 63A corresponding to the flow path pattern of the mixing section 63 is formed on one surface of the substrate 110A by photolithography and etching. The channel-side constituent portion 63A is open on one surface of the substrate 110A.

[0056] 6(B), the first supply section 61, the second supply section 62, and the discharge section 64 are formed on the base material 110A. Specifically, through-holes are formed on the other surface of the base material 110A by photolithography and etching to form the first supply section 61, the second supply section 62, and the discharge section 64.

[0057] 2-3. Formation of the microreactor 10 As shown in Fig. 6(C), the microheater 120 and the microchannel 110 formed as described above are aligned and then bonded together, completing the microreactor 10 as shown in Fig. 6(D).

[0058] 3. Effects of the First Embodiment The microreactor 10 of the first embodiment includes a flow path configuration unit 60 that configures a flow path P, and a heat generating unit 30. The flow path configuration unit 60 has a heating area AR1 that is heated by the heat generating unit 30, and a non-heating area AR2 that is not heated by the heat generating unit 30. With this configuration, the heat generating unit 30 can heat only the heating area AR1 in the flow path configuration unit 60. Therefore, only the necessary portion (heating area AR1) in the flow path configuration unit 60 can be heated, making it easier to control the reaction.

[0059] For example, it is effective to carry out radical polymerization of various monomers (such as butyl acrylate) using the microreactor 10. When a monomer that generates a large amount of heat is used, precise temperature control by the microreactor 10 is expected to be highly effective in controlling the molecular weight distribution.

[0060] It is also effective to synthesize nanoparticles using the microreactor 10. For example, when synthesizing by reacting organic cadmium (Cd) with selenium (Se), precise temperature control by the microreactor 10 can be expected to be highly effective in synthesizing CdSe nanoparticles.

[0061] Furthermore, in the microreactor 10 of the first embodiment, the difference between the maximum temperature in the heated region AR1 and the maximum temperature in the non-heated region AR2 is 40° C. or more. With this configuration, the flow path configuration part 60 can be provided with the heated region AR1 and the non-heated region AR2 having a desired temperature difference (a temperature difference in maximum temperature of 40° C. or more).

[0062] Furthermore, the microreactor 10 of the first embodiment includes a base 20 on which a heat generating portion 30 is disposed. The base 20 has an opening 20A. The heat generating portion 30 is provided within the opening 20A. The opening 20A is provided on the opposite side of the base 20 from the flow path P. With this configuration, heat loss to the opposite side of the flow path P can be suppressed compared to a configuration in which the heat generating portion 30 is not exposed (such as a configuration in which the heat generating portion 30 is buried in the base 20).

[0063] Furthermore, in the microreactor 10 of the first embodiment, etching is performed from the first semiconductor layer 21 side of the base 20 (the side opposite to the heat generating portion 30), so that unevenness is less likely to occur on the front surface side (the second insulating layer 40 side) of the heat generating portion 30. Also, the back surface side (the first semiconductor layer 21 side) of the heat generating portion 30 of the base 20 can be etched in stages by a process of etching a part of the first semiconductor layer 21 until the first insulating layer 22 is exposed, a process of etching the exposed part of the first insulating layer 22 until the adjacent portion 31 adjacent to the heat generating portion 30 in the second semiconductor layer 23 is exposed, and a process of etching the exposed adjacent portion 31. Therefore, the etching time when etching the adjacent portion 31 can be shortened compared to when the heat generating portion 30 is exposed from the base 20 by a single etching process, and thickness variations in the heat generating portion 30 due to over-etching or the like can be suppressed.

[0064] Furthermore, in the microreactor 10 of the first embodiment, etching is performed from the first semiconductor layer 21 side (the side opposite to the heat generating portion 30) of the base 20, so that the upper surface of the microheater 120 (the upper surface of the second insulating layer 40) can be made flat and without irregularities. This makes it easier to bond the microchannel 110 to the upper surface of the microheater 120.

[0065] Furthermore, in the microreactor 10 of the first embodiment, the first insulating layer 22 of the base 20 is a silicon oxide (SiO2) layer. This makes it easier for a difference in etching rate to occur between the heat generating portion 30 and the adjacent portion 31 in the process of etching the exposed adjacent portion 31. This makes it difficult for the heat generating portion 30 to be etched, allowing the heat generating portion 30 to be formed with even greater precision.

[0066] Furthermore, in the microreactor 10 of the first embodiment, an insulating layer in which a silicon oxide layer and a silicon nitride layer are stacked in this order is used as the second insulating layer 40 on the second semiconductor layer 23. With this configuration, it is possible to form the second insulating layer 40 that has a large tensile stress and can suppress deformation while ensuring high adhesion between the second insulating layer 40 and the base 20 (second semiconductor layer 23). For example, it is possible to suppress deformation of the second insulating layer 40 due to heating by the heat generating unit 30.

[0067] Second Embodiment The second embodiment differs from the first embodiment in that the microreactor includes a heat dissipation unit, but the other configurations are the same. Note that the same components as those in the first embodiment are denoted by the same reference numerals, and detailed explanations will be omitted.

[0068] A microreactor 210 according to a second embodiment of the present disclosure will now be described with reference to Fig. 7. The microreactor 210 includes a microchannel 110, a microheater 120, and a heat dissipation unit 270. The heat dissipation unit 270 dissipates heat from the non-heating area AR2.

[0069] The heat dissipation unit 270 has a shape in which plate-like rods called fins extend in a pin holder or bellows shape, for example. The heat dissipation unit 270 is made of a metal with high thermal conductivity, such as aluminum (Al), copper (Cu), or iron (Fe).

[0070] The heat dissipation section 270 is disposed on the upper surface of the microchannel 110. The heat dissipation section 270 is disposed near (adjacent to) the discharge section 64. The heat dissipation section 270 overlaps the non-heating area AR2 in the vertical direction, but does not overlap the heating area AR1 in the vertical direction. The heat dissipation section 270 does not overlap the heat generation section 30 in the vertical direction. For example, the horizontal edge of the heat dissipation section 270 overlaps the edge of the opening 20A.

[0071] In the second embodiment, the heat transferred from the heat generating portion 30 to the non-heated area AR2 can be released, making it easier to maintain the non-heated area AR2 at a desired temperature (room temperature).

[0072] <Other embodiments> The present invention is not limited to the embodiments described above and illustrated in the drawings, and the following embodiments are also included within the technical scope of the present invention. Furthermore, the various features of the above-mentioned embodiments and the embodiments to be described later may be combined in any manner as long as they are not contradictory.

[0073] In the microreactor 10 of the first and second embodiments, the heating area AR1 is an integral part configured by the parts that vertically overlap with the end components of the four components of the heat generating unit 30 and the parts therebetween. However, the heating area AR1 may be a part that vertically overlaps with the opening area at the upper end of the opening 20A in the flow path configuring unit 60 (mixing unit 63). The heating area AR1 may be the entire mixing unit 63 or a part of the mixing unit 63 downstream of the second supply unit 62.

[0074] Although the microreactor 10 of the first and second embodiments is provided with two raw material supply parts (the first supply part 61 and the second supply part 62), it may be provided with three or more raw material supply parts.

[0075] In the microreactor 10 of the first and second embodiments, the first supply section 61, the second supply section 62, and the discharge section 64 extend in the vertical direction, but they may extend in other directions and may not be linear.

[0076] In the microreactor 10 of the first and second embodiments, the first supply unit 61 and the second supply unit 62 function as supply units for the raw material, but they may also function as supply units for mixing an activator or the like with the raw material. With this configuration, the raw material reacts with the activator to generate a short-lived intermediate, and before the intermediate decomposes, the reactant can be reacted with the intermediate in the mixing unit 63.

[0077] In the microreactor 10 of the second embodiment, the heat dissipation section 270 is disposed near the discharge section 64, but it may be disposed at another position, such as near the first supply section 61 or the second supply section 62.

[0078] In the microreactor 10 of the second embodiment, the heat dissipation section 270 is disposed on the upper surface of the base 20, but it may be disposed on the lower surface of the base 20.

[0079] In the microreactor 10 of the second embodiment, the heat dissipation portion 270 is made of a metal material extending in a mountain or bellows shape, but it may also be made of a Peltier element.

[0080] It should be noted that the embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The scope of the present invention is not limited to the embodiments disclosed herein, but is intended to include all modifications within the scope indicated by the claims or the scope equivalent to the claims. [Explanation of symbols]

[0081] 10: Microreactor 20: Base 20A: Opening 21: First semiconductor layer 21A: Opening 22: First insulating layer 22A: Opening 23: Second semiconductor layer 30: Heat generating part 31: Adjacent area 32: Lead 34: Pad 40: Second insulating layer 40A: Opening 50: Third insulating layer 50A: opening 51: Fourth insulating layer 51A,51B: Opening 60: Flow path configuration section 61: 1st supply section 62: 2nd supply section 63: Mixing section 63A: Channel side component 63B: Insulation layer side component 64: Discharge section 110: Microchannel 110A: Base material 120: Microheater 210: Microreactor 270: Heat radiation part AR1: heating area AR2: Unheated area P: Flow path

Claims

1. A microreactor including a flow path forming part that forms a flow path and a heat generating part, The flow path configuration section is a microreactor having a heated region that is heated by the heat generating section and a non-heated region that is not heated by the heat generating section.

2. 2. The microreactor according to claim 1, wherein the difference between the maximum temperature in the heated region and the maximum temperature in the unheated region is 40° C. or more.

3. a base on which the heat generating portion is disposed, the substrate has an opening; the heat generating portion is provided within the opening, 3. The microreactor according to claim 1, wherein the opening is provided on the opposite side of the base body from the flow channel.

4. The microreactor according to claim 1 or 2, further comprising a heat dissipation section that dissipates heat from the non-heated region.

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