Information processing device, information processing method, and program

Abstract

To provide a system capable of computing an absorbance distribution produced by ultraviolet exposure of a photosensitive resin composition serving as a scatterer.SOLUTION: An information processing device comprises an acquisition unit that acquires an optical parameter of a scattering layer serving as a scatterer, and a calculation unit that, based on the film thickness and the optical parameter of the scattering layer, computes an absorbance distribution in the scattering layer when light of a predetermined wavelength is applied to a predetermined irradiation point.SELECTED DRAWING: Figure 1A

Description

[Technical Field]

[0001] The present invention relates to an information processing device, an information processing method, and a program. [Background technology]

[0002] Photosensitive resin compositions are materials that serve as insulating films that cover the surface of printed circuit boards and protect circuit patterns, and materials that are used to form circuits on boards. They have roles such as preventing solder from adhering to unnecessary areas when mounting components, and preventing circuits from being formed in unnecessary areas when forming circuits.

[0003] Such photosensitive resin compositions can be used to form fine patterns, for example, by exposing a substrate having the photosensitive resin composition formed thereon through a negative or positive film on which a circuit pattern has been formed, or by exposing the substrate using a direct imaging device, and then developing the developer-soluble portions with a developer. However, obtaining a desired pattern requires the expertise of an expert to design the composition of the photosensitive resin composition and adjust the exposure and development process conditions, which are difficult to predict. Therefore, there is a need for a technology that can predict in advance the pattern shape obtained by patternwise exposure of a photosensitive resin composition.

[0004] In order to predict the pattern shape obtained by patternwise exposure of a photosensitive resin composition, it is important to accurately predict how the light exposed to the photosensitive resin composition is absorbed in the photosensitive resin composition, i.e., the light absorption distribution. In this regard, for example, in the field of resist materials formed on semiconductor wafers, a technique described in Patent Document 1 is known as a technique for calculating the energy accumulation distribution when a resist material is irradiated with an electron beam. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-242710 Summary of the Invention [Problem to be solved by the invention]

[0006] However, in the case of a photosensitive resin composition (for example, solder resist) which is a scattering body, there are cases where the techniques for calculating the light absorption distribution and energy accumulation distribution used in resist materials cannot be applied.

[0007] Specifically, since the resist material formed on the semiconductor wafer does not contain scattering components such as inorganic fillers, organic fillers, pigments, etc., when irradiating the resist material with ultraviolet light, usually only light absorption is taken into consideration, and calculation of the light absorption distribution taking light scattering into consideration has not been sufficiently considered.

[0008] Furthermore, Patent Document 1 discloses a technique for calculating the energy deposition distribution taking into account electron scattering of electron beams in electron beam lithography. However, the wavelength of electron beams is significantly different from that of ultraviolet light, which is commonly used to form patterns on photosensitive resin compositions. Therefore, the physical phenomena occurring during electron beam irradiation and ultraviolet light irradiation are different. Specifically, in electron beam lithography, because the wavelength is very short, the main physical phenomenon is electron scattering, in which the electron propagation direction and energy change due to atomic nuclei in the resist material. However, when ultraviolet light, which has a wavelength scale significantly different from that of electron beams, is irradiated, the effect of electron scattering becomes negligible. On the other hand, in the case of photosensitive resin compositions, which are scattering bodies, the main physical phenomena are light absorption by components contained in the photosensitive resin composition and light scattering by scattering components (e.g., Mie scattering and Rayleigh scattering). Calculation of the light absorption distribution taking into account light scattering by scattering components has not been thoroughly investigated.

[0009] Therefore, a system is desired that can calculate the light absorption distribution of the photosensitive resin composition that is the scatterer based on the material properties of the photosensitive resin composition that is the scatterer and the ultraviolet light exposure conditions for the photosensitive resin composition that is the scatterer.

[0010] The present invention has been made in consideration of the above problems, and aims to provide a system capable of calculating the light absorption distribution obtained by exposing a photosensitive resin composition, which is a scattering body, to ultraviolet light.

[0011] Furthermore, with the existence of such a system, it will be possible to propose an apparatus for carrying out the exposure process of the photosensitive resin composition, which is a scatterer, and exposure process conditions that match the pattern shape to be formed by the exposure and development process. It is also conceivable that the simulation results obtained by such a system can be utilized in the material design of the photosensitive resin composition. [Means for solving the problem]

[0012] An information processing device according to one aspect of the present invention includes an acquisition unit that acquires optical parameters of a scattering layer, which is a scatterer, and a calculation unit that calculates the light absorption distribution in the scattering layer when light of a predetermined wavelength is irradiated onto a predetermined irradiation point based on the film thickness of the scattering layer and the optical parameters. [Effects of the Invention]

[0013] According to the present invention, it is possible to provide a system capable of calculating the light absorption distribution obtained by exposing a photosensitive resin composition, which is a scattering body, to ultraviolet light. [Brief explanation of the drawings]

[0014] [Figure 1A] 1 is a schematic diagram illustrating a configuration of an information processing system according to an embodiment of the present invention. [Figure 1B] 1 is a schematic diagram illustrating a hardware configuration and a functional configuration of an information processing apparatus according to an embodiment of the present invention. [Figure 2A] 1 is a schematic cross-sectional view showing a laminate of the present embodiment. [Figure 2B] This is a schematic diagram showing the position of a photon emitted from a single light source, the amount of energy lost by the photon, and the calculation of its coordinates. [Figure 2C] FIG. 10 is a schematic diagram showing an image of integrating absorbance distributions calculated for each of a plurality of irradiation points. [Figure 3]1 is a flowchart of an information processing method according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0015] Below, we will explain in detail an embodiment of the present invention (hereinafter referred to as the "present embodiment") with reference to the drawings, but the present invention is not limited to this and various modifications are possible within the scope of the gist of the present invention.

[0016] 1. Information processing equipment 1A is a schematic diagram showing the configuration of an information processing system 1 according to one embodiment of the present invention. As shown in FIG. 1A, in this example of the information processing system 1, a server 100 (hereinafter also referred to as "information processing device 100") serving as an information processing device and a user device 200 are communicably connected via a network N such as the Internet.

[0017] The information processing device 100 is an information processing device realized by a program, and may transmit a processing result to the user device 200 via the communication interface 120 and the network N in response to a processing request received from the user device 200. For example, the information processing device 100 may acquire optical parameters of a scattering layer, which is a scatterer, from the user device 200. Then, based on the film thickness and optical parameters of the scattering layer, the information processing device 100 may calculate a light absorption distribution in the scattering layer when light of a predetermined wavelength is irradiated onto a predetermined irradiation point, and transmit the calculated distribution to the user device 200.

[0018] The user device 200 is an information processing device used by a user to execute information processing, and may be, for example, a computer, a smartphone, a tablet terminal, a personal computer, or the like.

[0019] Note that Figure 1A shows a client / server system including an information processing device 100 and a user device 200, and the following describes a mode in which the server functions as the information processing device 100, but the system of this embodiment is not limited to this, and instead of this system configuration, the user device 200 may be equipped with the processing functions of the information processing device described below.

[0020] The information processing device 100 can also be called a light absorption amount calculation device for calculating the amount of light absorption, and can also be called a pattern shape prediction device when predicting a pattern shape.

[0021] Hereinafter, the hardware configuration and functional configuration of the information processing device 100 will be described with reference to FIG. 1B, and then each control will be described in detail in association with the functional configuration of the information processing device 100.

[0022] As shown in FIG. 1B, the information processing device 100 includes, for example, a processor 110, a communication interface 120, an input / output interface 130, a memory 140, a storage 150, and one or more communication buses 160 for interconnecting these components.

[0023] The processor 110 executes processes, functions, or methods implemented by code or instructions included in a program stored in the storage 150. The processor 110 may include, for example and without limitation, one or more central processing units (CPUs), MPUs, GPUs, etc., and may implement each process, function, or method disclosed in each embodiment by a logic circuit (hardware) formed in an integrated circuit or the like, or a dedicated circuit.

[0024] As shown in FIG. 1B, the processor 110 of this embodiment may be configured to function as an acquisition unit 111, a calculation unit 112, a rendering unit 113, and a proposal unit 114.

[0025] The communication interface 120 transmits and receives various data to and from other devices via the network N. The communication may be performed either wired or wirelessly, and any communication protocol may be used as long as mutual communication is possible. For example, the communication interface 120 may be implemented as hardware such as a network adapter, various communication software, or a combination of these.

[0026] Network N may be, by way of example and not limitation, an ad-hoc network, an intranet, an extranet, a virtual private network (VPN), a local area network (LAN), a wireless LAN (WLAN), a wide area network (WAN), a wireless WAN (WWAN), a metropolitan area network (MAN), a portion of the Internet, a portion of the public switched telephone network (PSTN), a cellular network, Integrated Service Digital Networks (ISDNs), wireless LANs, Long Term Evolution (LTE), Code Division Multiple Access (CDMA), Bluetooth, satellite communications, etc., or any combination thereof. A network may include one or more networks.

[0027] The input / output interface 130 includes an input device for inputting various operations to the information processing device 100, and an output device for outputting processing results processed by the information processing device 100. For example, the input / output interface 130 includes information input devices such as a keyboard, a mouse, and a touch panel, and information output devices such as a display. Note that the information processing device 100 may receive a predetermined input or execute a predetermined output by connecting an external input / output interface 130.

[0028] Memory 140 temporarily stores programs loaded from storage 150 and provides a working area for processor 110. Memory 140 also temporarily stores various data generated while processor 110 is executing the programs. Memory 140 may be, for example, a high-speed random access memory such as a DRAM, an SRAM, a DDR RAM, or another random access solid-state storage device, or a combination of these.

[0029] Storage 150 stores programs, various functional units, and various data. Storage 150 may be, for example, one or more magnetic disk storage devices, optical disk storage devices, flash memory devices, or nonvolatile memories such as other nonvolatile solid-state storage devices, or a combination thereof. Another example of storage 150 may be one or more storage devices installed remotely from processor 110.

[0030] The communication bus 160 is not particularly limited as long as it is a known dedicated communication path for exchanging data, control information, and the like between hardware configurations.

[0031] Next, each functional unit of the information processing apparatus of this embodiment will be described in detail. Before going into the details of this embodiment, however, as background knowledge, the scattering layer, which is the subject of calculation of the amount of light absorption, will be described.

[0032] A solder resist layer will be described as an example of a scattering layer to which the information processing device of this embodiment is applied. FIG. 2A shows a schematic cross-sectional view of a laminate 10 in which a solder resist layer 12 and a support layer (e.g., a PET layer) 13 are laminated on a substrate (e.g., a copper substrate) 11, as the configuration of the solder resist layer during exposure. The laminate 10 includes two or more layers with different optical properties, namely, the substrate 11, the solder resist layer 12, and the support layer 13, and also includes the solder resist layer 12 as a scattering layer that functions as a scatterer. The solder resist layer 12 is a scatterer that contains scattering components 14 such as inorganic fillers, organic fillers, and pigments, and / or scattering regions such as a phase-separated structure of resin components or surface irregularities. Therefore, light absorption and scattering occur within the solder resist layer 12. In other words, the solder resist layer 12 also functions as a scattering absorber.

[0033] 2A, when light is irradiated from the support layer 13 side toward the substrate 11, the light propagates through the solder resist layer 12 while being absorbed or scattered. When the solder resist layer 12 absorbs a certain amount of light or more, it hardens, and in the subsequent development step, the hardened solder resist layer 12 in the exposed areas remains as a pattern. Note that the unexposed areas of the solder resist layer 12 may also remain as a pattern.

[0034] In this embodiment, the acquiring unit 111 acquires optical parameters of a scattering layer (for example, the solder resist layer 12) that is a scatterer. At this time, the acquiring unit 111 acquires each optical parameter assuming that the scattering layer is a single homogeneous material. Here, the optical parameters include at least one of a refractive index n, an absorption coefficient μa, a scattering coefficient μs, and a scattering anisotropy parameter g.

[0035] When the information processing device of this embodiment is applied to a laminate including a scattering layer, the optical parameters of each layer of the laminate may be acquired, or the optical parameters of at least the light-transmitting layers in the laminate may be acquired. For example, in the laminate 10, the optical parameters of the solder resist layer 12 and the support layer 13 may be acquired.

[0036] When the optical parameters of the scattering layer or the like are known, the values ​​may be acquired by the acquisition unit 111. When the optical parameters of the scattering layer or the like are unknown, the acquisition unit 111 may calculate the optical parameters of the scattering layer or the like based on the optical parameters of each component contained in the scattering layer or the like.

[0037] However, for example, when the scattering layer is a composite material (e.g., the solder resist layer 12), the composite material contains many components, and it may be difficult to calculate the optical parameters of the scattering layer from the material composition, taking into account the size, shape, refractive index, etc. of the scatterer. In this embodiment, the acquisition unit 111 may estimate the optical parameters of the scattering layer by the reverse Monte Carlo method based on the transmittance and reflectance of the scattering layer, etc.

[0038] Furthermore, for example, when the scattering layer is a thin film, it may be difficult to measure the transmittance and reflectance of the scattering layer alone as a free-standing film. In this embodiment, the acquisition unit 111 may estimate the optical parameters of the scattering layer by the reverse Monte Carlo method based on the transmittance and reflectance of a composite layer including the scattering layer stacked on the support layer.

[0039] More specifically, the acquisition unit 111 may first estimate and acquire optical parameters of only the support layer based on the measured values ​​of transmittance and reflectance using a reverse Monte Carlo method. For example, the acquisition unit 111 may repeatedly calculate calculated values ​​while changing at least one of the optical parameters, such as the refractive index n, absorption coefficient μa, scattering coefficient μs, and scattering anisotropy parameter g, of each layer until calculated values ​​of reflectance and transmittance are obtained that are approximately equal to the measured values ​​of transmittance and reflectance, and estimate and acquire predetermined optical parameters that make the calculated values ​​of reflectance and transmittance approximately equal to the measured values. More specifically, the acquisition unit 111 may compare the measured values ​​of reflectance and transmittance with the calculated values, and search for optical parameters, such as the refractive index n, absorption coefficient μa, scattering coefficient μs, and scattering anisotropy parameter g of each layer, that make the difference in reflectance and transmittance equal to or less than a predetermined value.

[0040] By repeating this procedure, optical parameters such as the refractive index n, the absorption coefficient μ, the scattering coefficient μ, and the scattering anisotropy parameter g of the support layer can be estimated. Thereafter, the acquisition unit 111 may estimate and acquire the optical parameters of the scattering layer by the reverse Monte Carlo method based on the measured values ​​of the transmittance and reflectance of the composite layer and the optical parameters of the support layer. Furthermore, to improve the accuracy of estimating the optical parameters, the optical parameters of the scattering layer may be estimated by the reverse Monte Carlo method based on the measured values ​​of the transmittance and reflectance of a plurality of composite layers including scattering layers formed with different film thicknesses and the optical parameters of the support layers.

[0041] The scattering layer of this embodiment is a scatterer made of a photosensitive resin composition and having a scattering component and / or a scattering region. The scattering component or scattering region is a component or region in the scattering layer that scatters ultraviolet light. The scattering component may be an inorganic filler, an organic filler, a pigment, or the like, and the scattering region may be a phase-separated structure of a resin component contained in the scattering layer or unevenness on the surface of the scattering layer. The scattering layer is a photosensitive resin composition layer, and may be, for example, a solder resist layer. The scattering layer may cause Rayleigh scattering, which is elastic scattering by particles smaller than the wavelength of light, or Mie scattering, which is scattering by particles larger than the wavelength of light, as scattering by the scattering component or scattering region. In this embodiment, the term "scattering" simply refers to Rayleigh scattering or Mie scattering, and is distinguished from scattering by electrons such as Thomson scattering or Compton scattering, and scattering by phonons such as Brillouin scattering or Raman scattering.

[0042] The calculation unit 112 calculates the light absorption distribution in the scattering layer when a predetermined irradiation point is irradiated with light of a predetermined wavelength, based on the film thickness and optical parameters of each layer. For this calculation, as shown in Fig. 2B, the amount of energy lost by the photon and its coordinates may be calculated using a Monte Carlo method based on the position of the photon emitted from one light source, the angle of the irradiated light, the thickness of the scattering layer, and the optical parameters of the scattering layer (refractive index n, absorption coefficient μa, scattering coefficient μs, and scattering anisotropy parameter g).

[0043] The Monte Carlo method can be used to obtain a specific light absorption distribution for a scattering layer corresponding to a specific film thickness and optical parameters when light of a specific wavelength is irradiated at a specific irradiation point. The Monte Carlo method is a method that enables statistical simulation using random numbers, and can be used to simulate the behavior of individual photons. Specifically, by dividing light into many photons (or groups), treating them as energy particles of light that scatter, change direction, and are absorbed, it is possible to simulate the photon propagation path and the attenuation of light intensity along the propagation path. The calculation unit 112 may perform calculations using the Monte Carlo method under these conditions based on the film thickness and optical parameters of the scattering layer (refractive index n, absorption coefficient μa, scattering coefficient μs, scattering anisotropy parameter g), thereby obtaining a specific reflectance and transmittance corresponding to the film thickness and optical parameters of each layer, and a light absorption distribution for a photon incident from one irradiation point. The distribution of light intensity lost by photons at each coordinate calculated here can be considered as a light absorption distribution.

[0044] Next, a method for calculating the light absorption distribution using the Monte Carlo method will be described in detail. Considering the case where one photon is incident on the surface of a material with a scattering coefficient μs, an absorption coefficient μa, and a scattering anisotropy parameter g, the mean free path L of the photon is expressed by the following equation (1):

number

[0045] Assuming that a photon that has traveled a distance L is simultaneously scattered and absorbed, the photon's light intensity is attenuated by a weight W shown in equation (2), and the photon is scattered in the direction of the zenith angle θ shown in equation (3) relative to the direction of travel of the photon. Note that the photon is scattered isotropically in the azimuthal angle direction.

number

[0046] Here, f(θ) represents the cumulative distribution function of the scattering phase function p(θ), and is a random number between 0 and 1. An example of the phase function is the Henyey-Greenstein phase function shown in equation (4).

number

[0047] In equation (4), when g≠0, cos θ is expressed by equation (5).

number

[0048] Using these equations, it is possible to simulate the propagation path of a photon and the attenuation of light intensity along that path from the scattering coefficient μs, the absorption coefficient μa, and the scattering anisotropy parameter g. When the light intensity of a photon becomes sufficiently small (for example, when it becomes less than 1 / 10,000 of the light intensity at the time of incidence), the photon can be considered to have disappeared, and when the photon is emitted from the incident surface of the material, it can be considered to have been reflected.

[0049] When a photon reaches an interface of materials, the photon may be considered to be transmitted or reflected depending on the properties of the interface. For example, if the interface is between the support layer 13 and the solder resist layer 12, the photon may be considered to be transmitted or reflected based on the probability calculated using Fresnel's equation.

[0050] When the incident photon is annihilated or is emitted outside the material by transmission or reflection, the Monte Carlo calculation for that photon is completed, and the coordinate where the photon's energy has attenuated and the amount of energy attenuation at that coordinate are recorded.

[0051] The light absorption calculated by the calculation unit 112 in this manner is a light absorption simulation of one photon incident from one irradiation point. By performing a similar light absorption simulation for multiple photons at one irradiation point, the light absorption distribution of light incident from one irradiation point can be calculated. As shown in FIG. 2C , the calculation unit 112 may calculate the light absorption distribution at the time of pattern exposure by integrating the light absorption distributions calculated at each of the multiple irradiation points. This allows the light absorption distribution of the scattering layer at the time of pattern exposure to be calculated. In particular, when predicting the pattern shape of a photosensitive resin composition, the light absorption distribution near the edge of the pattern exposure area is important. Therefore, the Monte Carlo calculation may be performed by selecting irradiation points only from a defined region having a predetermined width or size, and integrating these results to calculate the light absorption distribution of the entire region, including areas other than the defined region.

[0052] The calculation unit 112 may perform weighting based on the light intensity distribution when integrating the light absorption distribution calculated at each of the multiple irradiation points. By performing weighting based on the light intensity distribution, it becomes possible to take into account the influence of wave optics, such as focus deviation of the exposure machine.

[0053] The light intensity distribution can be calculated using a conventionally known method, for example, by using ideal lens approximation or Fourier transform, taking into consideration the NA, aberration, etc. of the mask pattern and exposure tool.

[0054] The drawing unit 113 may predict the pattern shape of the scattering layer based on the light absorption threshold and the light absorption distribution of the scattering layer at the time of pattern exposure calculated by the calculation unit 112. The light absorption threshold is a threshold of the amount of light absorption required for the scattering layer to harden, and may be a value that determines the boundary at which the exposed portion remains as a pattern when developed.

[0055] The light absorption threshold may be determined by comparing the light absorption distribution of the scattering layer during pattern exposure with the pattern shape when the scattering layer is actually exposed and developed. Specifically, by comparing the light absorption distribution during pattern exposure with the pattern shape when the scattering layer is actually exposed and developed, the boundary between the removed portion and the remaining portion of the pattern in the light absorption distribution may be set as the light absorption threshold.

[0056] In addition, the drawing unit may predict the development rate at each coordinate based on the light absorption distribution of the scattering layer at the time of pattern exposure calculated by the calculation unit 112 and the relationship between the light absorption rate of the scattering layer and the development rate, and may predict the pattern shape of the scattering layer based on the predicted development rate at each coordinate.

[0057] The patterning unit 113 may predict the pattern shape of the scattering layer by further considering the conditions of the development process, such as the composition of the developer, the development temperature, and the development time.

[0058] Next, the calculation process in the information processing method of this embodiment will be described with reference to FIG.

[0059] In step S01, the acquisition unit 111 receives input from a user via the input / output interface 130 or the like, and acquires optical parameters of the scattering layer, such as the refractive index n, the absorption coefficient μa, the scattering coefficient μs, and the scattering anisotropy parameter g.

[0060] Then, in step S02, the calculation unit 112 calculates the light absorption distribution in the scattering layer when a predetermined irradiation point is irradiated with light of a predetermined wavelength, based on the film thickness and optical parameters of the scattering layer.

[0061] Next, in step S03, the calculation unit 112 determines an exposure area for pattern exposure by referring to mask data, etc., and performs a light absorption simulation of photons incident from one irradiation point within the exposure area. The calculation unit 112 may calculate the light absorption distribution during pattern exposure by integrating the light absorption distribution calculated for each of the multiple irradiation points. This makes it possible to obtain the light absorption distribution due to pattern exposure.

[0062] Finally, in step S04, the drawing unit 113 may predict the pattern shape from a predetermined threshold value or the like based on the light absorption distribution.

[0063] In this way, in this embodiment, the pattern shape in the scattering layer can be predicted by calculating the light absorption distribution in the scattering layer when light of a specified wavelength is irradiated to a specified irradiation point based on the optical parameters of the scattering layer.

[0064] Furthermore, the information processing device of this embodiment may have a suggestion unit 114 that suggests, based on a pattern shape desired by a user, material properties of a photosensitive resin composition that will satisfy the desired pattern shape, or exposure conditions or development conditions for the photosensitive resin composition.

[0065] 2. Information processing method In the information processing method of this embodiment, an information processing device executes the steps of acquiring optical parameters of a scattering layer, which is a scatterer, and calculating, based on the film thickness of the scattering layer and the optical parameters, the light absorption distribution in the scattering layer when light of a predetermined wavelength is irradiated onto a predetermined irradiation point.

[0066] Since the specific aspects of the method of this embodiment have been described in the control process above, detailed description thereof will be omitted here. The above method can also be called a light absorption calculation method for calculating the amount of light absorption, and when predicting a pattern shape, can also be called a pattern shape prediction method.

[0067] 3. Program The program of this embodiment executes the steps of acquiring optical parameters of a scattering layer, which is a scatterer, and calculating the light absorption distribution in the scattering layer when light of a predetermined wavelength is irradiated onto a predetermined irradiation point based on the film thickness of the scattering layer and the optical parameters.

[0068] The program may be recorded on a readable recording medium. Note that the specific aspects of the processing executed by the program of this embodiment have been described in the control processing section above, and therefore will not be described in detail here. [Explanation of symbols]

[0069] 1...information processing system, 10...laminated body, 11...substrate, 12...solder resist layer, 13...support layer, 14...scattered component, 100...information processing device, 110...processor, 111...acquisition unit, 112...calculation unit, 113...drawing unit, 114...proposition unit, 120...communication interface, 130...input / output interface, 140...memory, 150...storage, 160...communication bus, 200...user device

Claims

1. an acquisition unit that acquires optical parameters of a scattering layer that is a scatterer; a calculation unit that calculates a light absorption distribution in the scattering layer when a predetermined irradiation point is irradiated with light of a predetermined wavelength based on the film thickness of the scattering layer and the optical parameters, Information processing device.

2. the scattering layer is at least one layer of a laminate; the stack has two or more layers with different optical parameters; the acquisition unit further acquires optical parameters of each layer other than the scattering layer included in the laminate; the calculation unit calculates a light absorption distribution in the scattering layer when a predetermined irradiation point is irradiated with light of a predetermined wavelength, based on the film thickness and optical parameters of each of the layers. The information processing device according to claim 1 .

3. the calculation unit calculates the light absorption distribution during pattern exposure by integrating the light absorption distribution in the scattering layer calculated at each of the plurality of irradiation points. The information processing device according to claim 1 .

4. The optical parameters include at least one of a refractive index n, an absorption coefficient μ a, a scattering coefficient μ s, and a scattering anisotropy parameter g; The information processing device according to claim 1 .

5. a drawing unit that predicts a pattern shape based on the light absorption distribution and a light absorption threshold value during pattern exposure; The information processing device according to claim 1 .

6. the light absorption threshold is determined by comparing the light absorption distribution during pattern exposure with the pattern shape when actually exposed and developed; The information processing device according to claim 5 .

7. the patterning unit predicts the pattern shape by further taking into consideration conditions of a development process. The information processing device according to claim 5 .

8. The scattering layer causes Rayleigh scattering or Mie scattering. The information processing device according to claim 1 .

9. The information processing device acquiring optical parameters of a scattering layer, the scattering layer being a scatterer; and calculating a light absorption distribution in the scattering layer when a predetermined irradiation point is irradiated with light of a predetermined wavelength based on the film thickness of the scattering layer and the optical parameters. Information processing methods.

10. In the information processing device, acquiring optical parameters of a scattering layer, the scattering layer being a scatterer; and calculating a light absorption distribution in the scattering layer when a predetermined irradiation point is irradiated with light of a predetermined wavelength, based on the film thickness of the scattering layer and the optical parameters. program.

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