Optical proximity effect correction method and device, equipment and storage medium

Abstract

The invention relates to an optical proximity effect correction method and device, equipment and a storage medium. The optical proximity effect correction method comprises the steps of obtaining a first correction basis of a target pattern based on a plurality of patterns included in the target pattern; according to the first correction basis, determining a first preset compensation value corresponding to the first correction basis from a first process compensation value table; and correcting the initial layout corresponding to the target pattern into a first corrected layout according to the first preset compensation value. The optical proximity effect correction method can realize efficient development.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of photolithography, and in particular, to an optical proximity effect correction method, device, equipment and storage medium. BACKGROUND

[0002] The photolithography process is a commonly used process in the field of semiconductor processing. In the exposure process, light can irradiate photoresist through a mask to transfer the mask pattern to the photoresist. When the node size is small, due to the interference and diffraction effects of ultraviolet light, the wafer surface pattern will be distorted, which is called optical proximity effect (OPE).

[0003] The main manifestations of pattern distortion are line width characteristic size deviation, line end contraction, bridging, and corner rounding. In order to compensate for the pattern distortion caused by OPE, the mask pattern needs to be corrected so that the pattern on the final wafer is consistent with the designed pattern. This correction process is called optical proximity effect correction (OPC).

[0004] At nodes below 130 nm, model-based optical proximity effect correction is usually used. By establishing a model based on optics / photoresist and introducing the model into the correction program for iterative convergence, sufficient correction accuracy can be achieved to meet the node requirements. However, it takes a long time to develop a model-based optical proximity effect correction, and the development efficiency is low. SUMMARY

[0005] Therefore, it is necessary to provide an optical proximity effect correction method, device, equipment and storage medium to solve at least one of the above problems.

[0006] In a first aspect, the present application provides an optical proximity effect correction method, which includes: obtaining a first correction basis of a target pattern based on a plurality of patterns included in the target pattern; determining a first preset offset corresponding to the first correction basis from a first process offset table according to the first correction basis; and correcting an initial layout corresponding to the target pattern to a first corrected layout according to the first preset offset.

[0007] By obtaining the first correction basis based on the plurality of patterns of the target pattern, the obtained first correction basis is accurate and effective, which helps to determine the first preset offset from the first process offset table. The first process offset table can be established according to actual process collection, and the data is accurate, which is beneficial to more realistic simulation. According to the first preset offset, the initial layout can be corrected to the first corrected layout, and the simulation profile of the first corrected layout is closer to the target pattern. Through offset, the number of subsequent iterations can be reduced, so as to achieve fast convergence. It is beneficial to provide an optical proximity effect solution suitable for production needs.

[0008] In some embodiments, the step of obtaining the first correction basis comprises: obtaining a process node of the target pattern based on the key pattern in the plurality of patterns; and the step of determining the first preset offset comprises: determining the first preset offset corresponding to the process node according to the process node.

[0009] In this way, different offsets can be preset according to different nodes, and the development efficiency of the optical proximity correction method for each node can be improved.

[0010] In some embodiments, the first process offset table is configured to: in response to the process node being 90 nm, 110 nm or 130 nm, the first preset offset ranges from 10 nm to 15 nm; in response to the process node being 55 nm or 65 nm, the first preset offset ranges from 5 nm to 10 nm; and in response to the process node being 28 nm or 40 nm, the first preset offset ranges from 2 nm to 5 nm.

[0011] In this way, the convergence speed can be accelerated specifically, and the determination of the first preset offset can be simpler and faster.

[0012] In some embodiments, the optical proximity correction method further comprises: obtaining a critical dimension and a minimum distance value of the outer periphery of each correction pattern based on the plurality of correction patterns of the first corrected layout; obtaining a second preset offset of each correction pattern from the second process offset table according to the critical dimension and the minimum distance value of each correction pattern; and correcting the first corrected layout to a second corrected layout according to the plurality of second preset offsets.

[0013] In this way, through two-step correction, the initial layout can be quickly and well corrected for each node, and the overall running time is significantly reduced.

[0014] For example, the second process offset table is configured to:

[0015]

[0016] The unit of the data in the second process offset table is nm.

[0017] In this way, the running time is reduced by more than half, and the development progress of the optical proximity correction method can be significantly improved.

[0018] In some embodiments, the step of obtaining the first correction basis comprises: obtaining a critical dimension and a minimum distance value of the outer periphery of each pattern; the step of determining the first preset offset comprises: dividing the target pattern into a dense area and a sparse area according to the plurality of critical dimensions and the plurality of minimum distance values of the plurality of patterns; and the range of the sparse area offset k2 of the sparse area is 1.2 to 1.5 times the dense area offset k1 of the dense area.

[0019] In this way, the differential compensation for dense areas and sparse areas can be simply and quickly performed, the optical proximity correction method is easy to perform, and the running time is significantly reduced.

[0020] In some embodiments, the step of obtaining the first correction basis comprises: obtaining a critical dimension and a minimum pitch value of each pattern; the step of determining the first preset compensation comprises: determining the first preset compensation of each pattern from the first process compensation table according to the plurality of critical dimensions and the plurality of minimum pitch values; and the step of correcting the initial layout comprises: correcting according to the plurality of first preset compensations.

[0021] In this way, the initial layout can be finely corrected; although the compensation time is slightly longer, the number of subsequent iterations can be reduced, thereby achieving fast convergence.

[0022] Exemplarily, the first process compensation table is as follows:

[0023]

[0024] The unit of the data in the first process compensation table is nm.

[0025] In this way, the complex pattern can be finely compensated, and the overall running time is significantly reduced.

[0026] In some embodiments, the optical proximity correction method further comprises: performing a smoothing calculation on the initial layout to obtain a smoothing pattern as a target pattern; performing an iteration process based on the first corrected layout, comprising: performing simulation on the iteration layout to obtain a simulation pattern, calculating an edge placement error between the simulation pattern and the smoothing pattern, and correcting the iteration layout to a next iteration layout according to the edge placement error.

[0027] In this way, the operation of the optical proximity correction method can be based on the initial layout; the iteration can be performed by using the edge placement error. The optical proximity correction method provided by the embodiments of the present application can be effectively operated, the running time is short, and the final layout can be obtained based on the iteration layout.

[0028] In a second aspect, the present application provides an optical proximity correction device, comprising: a first extraction module configured to obtain a first correction basis of a target pattern based on a plurality of patterns included in the target pattern; a first selection module configured to determine a first preset compensation corresponding to the first correction basis from a first process compensation table according to the first correction basis; and a first correction module configured to correct an initial layout corresponding to the target pattern to a first corrected layout according to the first preset compensation.

[0029] In a third aspect, the present application provides a computer device. The computer device comprises a memory and a processor. The memory stores a computer program. The processor implements the steps of the foregoing method when executing the computer program.

[0030] In a fourth aspect, the present application provides a computer readable storage medium, which stores a computer program. The computer program is executed by a processor to implement the steps of the foregoing method.

[0031] In a fifth aspect, the present application further provides a computer program product. The computer program product comprises a computer program. The computer program is executed by a processor to implement the steps of the foregoing method.

[0032] The foregoing device, computer device, storage medium and computer program product can be used to correct the initial layout by implementing the steps of the foregoing method, and are beneficial to quickly and efficiently obtaining the final layout.

[0033] In a sixth aspect, the present application provides a mask. The layout of the mask is obtained according to the steps of the foregoing optical proximity correction method.

[0034] The mask of the embodiments of the present application can be used to manufacture a product with accurate patterns and has high development efficiency.

[0035] In a seventh aspect, the present application provides a semiconductor structure. The semiconductor structure is manufactured according to the foregoing mask.

[0036] The semiconductor structure provided by the embodiments of the present application has good performance. BRIEF DESCRIPTION OF DRAWINGS

[0037] Figure 1 A schematic flow chart of an optical proximity correction method according to one or more embodiments;

[0038] Figure 2 A flowchart of an optical proximity correction method according to one or more embodiments;

[0039] Figure 3 An effect diagram of an optical proximity correction method according to one or more embodiments;

[0040] Figure 4 A comparison diagram of running time of optical proximity correction methods according to Comparative Example 1, Embodiment 1, Embodiment 2 and Embodiment 4;

[0041] Figure 5 A comparison diagram of running time of optical proximity correction methods according to Comparative Example 1 and Embodiment 3;

[0042] Figure 6 A schematic structural block diagram of an optical proximity correction device according to one or more embodiments;

[0043] Figure 7 a structural schematic diagram of a computer device according to one or more embodiments;

[0044] Figure 8 a flowchart of a method for manufacturing a semiconductor structure according to one or more embodiments.

[0045] Legend: 1, initial layout; 11, first segment; 12, initial process pattern; 2, smoothed pattern; 3, cut line; 4, revised layout; 5, first simulated pattern; 6, iteration layout; 7, second simulated pattern; 8, optimized layout; 9, process layout; 10, process pattern;

[0046] 100, mask; 200, photoresist layer; 300, semiconductor structure;

[0047] 2000, optical proximity correction device; 2110, first correction unit; 2111, first extraction module; 2112, first selection module; 2113, first correction module; 2120, second correction unit; 2121, second extraction module; 2122, second selection module; 2123, second correction module; 2200, smoothing unit; 2300, cutting unit; 2410, iteration unit; 2411, simulation module; 2412, calculation module; 2413, iteration correction module; 2414, judgment module; 2420, optimization unit; 3000, computer device. DETAILED DESCRIPTION

[0048] In order to make the above objectives, features and advantages of the present application more apparent, specific embodiments of the present application will be described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. It will be apparent, however, to one skilled in the art that the present application can be practiced without using some or all of these specific details. In other instances, well-known process operations have not been described in detail in order to avoid obscuring the present application.

[0049] The term "layer" or "region" as used herein refers to a portion of material that includes an area and has a thickness. A layer can extend horizontally, vertically, and / or along a tapered surface. A layer can be an area of uniform or non-uniform continuous structure that has a thickness perpendicular to the direction of extension that is no greater than the thickness of the continuous structure. A layer can include multiple layers, which can be stacked or can extend discretely. The shapes of various regions, layers, and their relative sizes and positions in the drawings are merely exemplary and can deviate in practice due to manufacturing tolerances or technical limitations, and can be adjusted according to actual needs.

[0050] In addition, the terms "first", "second", "third", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined as "first", "second" can explicitly or implicitly include at least one of the features. For example, the first preset compensation value can also be referred to as the second preset compensation value, and the second preset compensation value can also be referred to as the first preset compensation value. In the description of the present application, the meaning of "a plurality of" is at least two, for example, two, three, etc., unless otherwise explicitly specified.

[0051] Reference Figure 1 , Figure 1 An optical proximity effect correction method in the embodiments of the present application is shown. The optical proximity effect correction method provided by the embodiments of the present application can be applied in a single terminal or a network environment. In the application environment, the terminal can communicate with the server through the network. The data storage system can store the data required to be processed by the server. The data storage system can be integrated on the server, or placed on the cloud or other network servers. For example, the first process compensation table can be stored in the local data storage system of the server; the correction step can be executed on the terminal. The terminal can be, but is not limited to, various personal computers, notebook computers, tablet computers, etc. The server can be implemented by a single server or a server cluster composed of multiple servers.

[0052] In the exemplary embodiments, the optical proximity effect correction method 1000 includes steps S111 to S113. These steps can constitute the first step correction step S110. The optical proximity effect correction method 1000 can only perform one correction, or can also perform multiple corrections such as the second step correction step S120.

[0053] In combination Figure 2 As shown, in some embodiments, the optical proximity effect correction method 1000 further includes step S210, which performs smoothing calculation on the initial version Figure 1 to obtain a smoothing pattern 2 as the target pattern. As Figure 2 The first step obtains a circular smoothing pattern based on the square-shaped layout pattern. The initial version Figure 1 The operation of the optical proximity effect correction method 1000 can easily obtain the target pattern.

[0054] The optical proximity effect correction method 1000 can further include step S310, which segments the initial version Figure 1 . As Figure 2 The second step obtains four segments of the initial version Figure 1 , for example, including a first segment 11. The segmentation can simplify the complex pattern and facilitate processing according to different peripheral environments.

[0055] The optical proximity effect correction method 1000 may further include step S320, generating a secant line 3 for each segment. The secant line 3 may be located at the center of the corresponding segment, perpendicular to the corresponding segment, or a normal line. The secant line 3 helps to locate the segments cut out in S3110.

[0056] Step S111 can be performed after step S320, or before or simultaneously. Step S111 obtains the first correction basis. Specifically, based on the multiple graphics included in the target pattern, the first correction basis for the target pattern is obtained.

[0057] Step S112: Determine the first preset compensation value. Specifically, the first preset compensation value corresponding to the first correction basis can be determined from the first process compensation value table based on the first correction basis. The first correction basis is obtained by using multiple graphics based on the target pattern. The obtained first correction basis is accurate and effective, which helps to determine the first preset compensation value from the first process compensation value table. The first process compensation value table can be established based on actual process data, and the data is accurate, which is conducive to more realistic simulation.

[0058] The data in the first process compensation table can be based on process deviations. Conductive channels or vias are often incorporated into semiconductor devices. During exposure, the optical proximity effect causes a deviation between the actual hole size and the layout size. For example, at the 55nm node (N55), the anchor pattern of the layout is CD110P180, meaning a critical size of 110nm, an array length of 180nm, and a spacing of 70nm. However, after actual exposure (after dry inspection, ADI), the critical size of the hole might be 100nm, resulting in a process deviation k of 10nm. Consequently, the corresponding first process compensation value could be 5nm. The first process compensation value is a one-sided compensation value. The actual process deviation k may differ for different nodes and different patterns.

[0059] Step S113: Based on the first preset complement value, the initial version of the corresponding target pattern is generated. Figure 1 Revised to the first revision Figure 4 For example, each segment can be adjusted based on secant 3. First Revision Figure 4 The simulated profile is better than the initial version. Figure 1 The simulated contour is closer to the target pattern. Through interpolation, the first revised version... Figure 4 As the starting pattern for subsequent iterations, compared to the initial version Figure 1 Iteration reduces the number of subsequent iterations, thus achieving rapid convergence; it is beneficial for providing optical proximity effect solutions suitable for production needs.

[0060] The optical proximity effect correction method 1000 may further include step S410, iteration. Specifically, step S410 may include: updating the iterative version... Figure 6The simulation is performed to obtain a simulation pattern, the edge placement error of the simulation pattern and the smooth pattern 2 as the target pattern is calculated, and the first modified pattern is modified to the next iteration pattern according to the edge placement error. Figure 6 The modified pattern is modified to the next iteration pattern.

[0061] Exemplarily, to start the iteration, the first modified pattern can be taken as the initial iteration pattern, and the first modified pattern is modified to the next iteration pattern according to the edge placement error. Figure 4 The modified pattern is modified to the next iteration pattern. Figure 4 The iteration process is performed. Specifically, the first modified pattern is modified to the next iteration pattern according to the edge placement error. Figure 4 The first simulation pattern 5 is obtained, and then the edge placement error of the first simulation pattern 5 and the smooth pattern 2 is calculated, and the first modified pattern is modified to the next iteration pattern according to the edge placement error. Figure 4 The modified pattern is modified to the next iteration pattern.

[0062] The simulation process can be performed by using a correction model, which is established based on an optical / photoresist, for example, based on ultraviolet light and a positive photoresist, or based on other actual photolithography processes.

[0063] The edge placement error can be calculated by using the secant line 3, and each segment is modified based on the corresponding secant line. The edge placement error can be multiplied by a set feedback value to obtain an actual movement value to move each segment. The iteration can be performed by using the edge placement error, and the simulation pattern of each iteration step can be referred to as a second simulation pattern 7, a third simulation pattern, and the like.

[0064] The iteration simulation pattern gradually converges to the target pattern. Exemplarily, after the iteration simulation pattern meets the convergence condition, the iteration pattern of the last step Figure 6 can be modified without the edge placement error.

[0065] The optical proximity correction method 1000 provided by the embodiments of the present application can be effectively operated and has a short operation time. The final pattern can be obtained based on the iteration pattern. Figure 6 .

[0066] The optical proximity correction method 1000 can further include a step S420 of optimization. Referring to Figure 2 the second last step, the optimized pattern Figure 8 can be obtained.

[0067] The optical proximity correction method 1000 can further include a step of outputting the pattern to output the process pattern 9. Referring to Figure 2 and Figure 3 , the initial pattern Figure 1 is directly applied to the exposure process to obtain the initial process pattern 12, Figure 3 in which the critical dimension of the hole of the initial process pattern 12 is too small; the process pattern 9 is applied to the exposure process, and the process pattern 10 can be obtained, Figure 2 , Figure 3 in which the critical dimension of the hole of the process pattern 10 is ideal.

[0068] The step of obtaining the first correction basis can comprise obtaining a process node of the target pattern based on the key pattern in the plurality of patterns. The step of determining the first preset offset value further comprises determining the first preset offset value corresponding to the process node according to the process node. Different offset values can be preset according to different nodes, which can improve the development efficiency of the optical proximity correction method 1000 of each node.

[0069] The first process offset table can be configured to: in response to the process node being 90 nm, 110 nm or 130 nm, the range of the first preset offset value being 10 nm to 15 nm; in response to the process node being 55 nm or 65 nm, the range of the first preset offset value being 5 nm to 10 nm; and in response to the process node being 28 nm or 40 nm, the range of the first preset offset value being 2 nm to 5 nm. The offset value of the first process offset table can be the value of the introduced process bias k. The first preset offset value of the first process offset table can be determined according to the first process offset table. The initial version Figure 1 is iterated based on the first corrected version Figure 4 . The first preset offset value can be determined more simply and quickly. For example, the larger the size of the process node, the larger the selected first preset offset value.

[0070] A comparative example 1 can be set. The comparative example 1 and the embodiment 1 can be based on the same layout, and the number of processors used for calculation is consistent. The comparative example 1 directly iterates the initial version Figure 1 without introducing the process bias k.

[0071] Reference Figure 4 , wherein N130 to N28 correspond to 130 nm nodes to 28 nm nodes, and the embodiment 1 corresponds to the bar chart of the method 1. Compared with the comparative example 1 introducing the process bias k, the running time of the optical proximity correction method (OPC) 1000 of the embodiment 1 is reduced by more than 20%. The OPC running time of the 28 nm or 40 nm node is reduced more. The embodiment 1 can accelerate the convergence speed for different nodes, and the correction step is simple and fast, which can be quickly applied to the OPC development of new nodes.

[0072] In the same node, for example, the 55 nm node, the target pattern can include different regions. The step S110 can be used for one-time correction, and the correction is divided into regions. Specifically, the step of obtaining the first correction basis can comprise obtaining the critical dimension and the minimum pitch value of the outer periphery of each pattern. The step of determining the first preset offset value comprises: dividing the target pattern into dense regions and sparse regions according to the plurality of critical dimensions and the plurality of minimum pitch values of the plurality of patterns. The range of the sparse region offset value k2 of the sparse region is 1.2 to 1.5 times the dense region offset value k1 of the dense region.

[0073] In the second embodiment, the sparse area can be defined as an area where the minimum spacing value between patterns is greater than four times the pattern size, and the dense area can be defined as an area where the minimum spacing value between patterns is less than four times the pattern size. If the two sides of a pattern are not the same, the pattern can be divided into a dense area based on the minimum spacing value around the pattern.

[0074] For each node, different steps S110 can be used, or different optical proximity correction methods 1000 can be developed. Referring to Figure 5 The second embodiment corresponds to the bar chart of the second method, and the running time of the optical proximity correction method 1000 of the second embodiment is reduced by more than 25% compared to the comparative example one in which the process bias k is introduced. The second embodiment of the present application can quickly and simply perform differentiated compensation for dense areas and sparse areas, and the optical proximity correction method 1000 is easy to execute and the running time is significantly reduced.

[0075] For example, after the pattern is segmented, the first preset compensation of each segment can be determined according to the density of the side on which the segment is located.

[0076] The step of obtaining the first correction basis can include obtaining the minimum spacing value of the critical dimension and the outer periphery of each pattern. The step of determining the first preset compensation can include determining the first preset compensation of each pattern from the first process compensation table according to the plurality of critical dimensions and the plurality of minimum spacing values of the plurality of patterns. The step of correcting the initial layout can include correcting according to the plurality of first preset compensations. The initial layout can be finely corrected; although the compensation time is slightly longer, the number of subsequent iterations can be reduced, thereby achieving rapid convergence. Figure 1

[0077] For example, after the pattern is segmented, the first preset compensation of each segment can be determined according to the density of the side on which the segment is located.

[0078] For example, the first process compensation table is:

[0079]

[0080] ​It should be understood that the units of data in the first process correction table are nm. Specifically, the first process correction table can be obtained according to a process of a 55 nm node. The critical dimension CD of the pattern can be divided into three ranges, in order: 0 nm < CD < 100 nm, corresponding to the vertical table header "0 <"; 100 nm≤ CD < 110 nm, corresponding to the vertical table header "100≤"; and 110 nm≤ CD, corresponding to the vertical table header "110≤". The minimum spacing value of the pattern can be divided into five ranges, in order: 0 nm < CD < 80 nm, corresponding to the horizontal table header "0 <"; 80 nm≤ CD < 200 nm, corresponding to the horizontal table header "80≤"; 200 nm≤ CD < 500 nm, corresponding to the horizontal table header "200≤"; 500 nm≤ CD < 1000 nm, corresponding to the horizontal table header "500≤"; and 1000 nm≤ CD, corresponding to the horizontal table header "1000≤".

[0081] For example, the critical dimension of the pattern is 85 nm, and the minimum spacing value of the pattern periphery is 105 nm. In the data area of the first process correction table, a column corresponding to the horizontal table header minimum spacing value "80≤" and a row corresponding to the vertical table header minimum spacing value "0≤" are selected, that is, a value in the range of 5.5 nm to 6.5 nm in the cell is selected. The optical proximity effect correction method 1000 of the embodiments of the present application can perform fine correction on a complex pattern, and the overall running time is significantly reduced. Embodiment three can select an intermediate value based on the numerical range, for example, when the critical dimension of the pattern is 85 nm and the minimum spacing value of the pattern periphery is 105 nm, the first preset correction value is 6 nm.

[0082] For example, the critical dimension of the pattern is 120 nm, and the minimum spacing value of the pattern periphery is 600 nm. A value in the range of 3.5 nm to 4.5 nm in the cell is selected, for example, 3.8 nm.

[0083] Reference Figure 4 Comparative Example One and Embodiment Three can be based on the same layout, and the number of processors used for calculation is consistent. Embodiment Three corresponds to the bar chart of Mode Three, and the OPC running time of Embodiment Three is reduced by more than 35% compared to Comparative Example One. The OPC running time is significantly reduced for 65 nm nodes and smaller nodes. Embodiment Three can also determine the first preset correction value for different nodes.

[0084] Reference Figure 1 The optical proximity effect correction method 1000 can further include a second step correction S120. Specifically, it can include a step S121 of correcting the first corrected layout based on the first preset correction value. Figure 4the minimum distance value of the outer periphery of each of the plurality of modified patterns. In step S122, the second preset compensation value of each of the plurality of modified patterns is obtained from the second process compensation table according to the critical dimension and the minimum distance value of each of the plurality of modified patterns. In step S123, the first modified version is modified into a second modified version according to the plurality of second preset compensation values. Then, the iteration step can be performed according to the second modified version. Through the two-step modification, the initial version of each node can be quickly and well modified, and the overall running time is significantly reduced. Figure 4 The modified version is modified into a second modified version. Then, the iteration step can be performed according to the second modified version. Through the two-step modification, the initial version of each node can be quickly and well modified, and the overall running time is significantly reduced. Figure 1 The modified version is modified into a second modified version. Then, the iteration step can be performed according to the second modified version. Through the two-step modification, the initial version of each node can be quickly and well modified, and the overall running time is significantly reduced.

[0085] For example, the second process compensation table is configured as:

[0086]

[0087] It should be understood that the units of data in the second process compensation table are nm. The fourth embodiment of the present application can perform a second step modification step after the first step modification step of the first embodiment, and the second step modification step can be based on the second process compensation table.

[0088] With reference to Figure 4 , the first comparative example and the fourth embodiment can be based on the same layout, and the number of processors used for calculation is consistent. The fourth embodiment corresponds to the column chart of the fourth mode, and the OPC running time of the fourth embodiment is reduced by more than 50% compared with the first comparative example. The running time of each node is reduced by more than half, which can significantly improve the development progress of the optical proximity effect correction method 1000. The fourth embodiment can determine the second preset compensation value for different nodes respectively. There are various different regions such as storage area, logic area, simulation area, etc. in some layouts, the logic area and the simulation area are complex, and the storage area is relatively simple. The fourth embodiment can efficiently modify the complex layout.

[0089] Based on the same inventive concept, the present application also provides an optical proximity effect correction device for implementing the optical proximity effect correction method 1000 described above. The implementation scheme of the device for solving the problem is similar to the implementation scheme described in the above method, so the specific limitations in one or more optical proximity effect correction device embodiments provided below can refer to the limitations of the optical proximity effect correction method 1000 described above, which will not be repeated here.

[0090] In an exemplary embodiment, with reference to Figure 6 , an optical proximity effect correction device 2000 is provided. The optical proximity effect correction device 2000 includes a first extraction module 2111, a first selection module 2112, and a first modification module 2113.

[0091] The first extraction module 2111 is configured to obtain a first correction basis of the target pattern based on a plurality of patterns included in the target pattern.

[0092] The first selection module 2112 is configured to determine a first preset compensation value corresponding to the first correction basis from a first process compensation table according to the first correction basis.

[0093] The first correction module 2113 is configured to correct an initial layout corresponding to the target pattern into a first corrected layout according to the first preset compensation value.

[0094] Exemplarily, in the optical proximity effect correction device 2000, the first extraction module 2111, the first selection module 2112, and the first correction module 2113 can constitute a first correction unit 2110.

[0095] The optical proximity effect correction device 2000 can further include the following units and modules.

[0096] The smoothing unit 2200 is configured to perform smoothing calculation on the initial layout to obtain a smoothing pattern as the target pattern.

[0097] The segmentation unit 2300 is configured to cut the initial layout and generate a cutting line for each segment.

[0098] The second correction unit 2120 can include:

[0099] The second extraction module 2112 is configured to obtain a critical dimension and a minimum spacing value of each correction pattern based on a plurality of correction patterns of the first corrected layout;

[0100] The second selection module 2122 is configured to obtain a second preset compensation value of each correction pattern from a second process compensation table according to the critical dimension and the minimum spacing value of each correction pattern;

[0101] The second correction module 2123 is configured to correct the first corrected layout into a second corrected layout.

[0102] The iteration unit 2410 can include:

[0103] The simulation module 2411 is configured to simulate the iteration layout to obtain a simulation pattern;

[0104] The calculation module 2412 is configured to calculate an edge placement error of the simulation pattern and the smoothing pattern;

[0105] The iteration correction module 2413 is configured to correct the iteration layout into a next iteration layout according to the edge placement error.

[0106] The judging module 2414 is configured to, in response to the cyclic adjustment being satisfied, proceed to the next iteration; and in response to the convergence condition being satisfied, end the iteration.

[0107] The optimization unit 2420 is configured to obtain the optimized layout according to the layout of the last iteration.

[0108] The above modules in the optical proximity effect correction device 2000 can be implemented by software, hardware, or a combination thereof. The above modules can be embedded in or independent of the processor in the computer device 3000 in hardware form, or stored in the memory in the computer device 3000 in software form, so as to be called and executed by the processor to perform the operations corresponding to the above modules.

[0109] Reference Figure 7 The present application provides a computer device 3000. The computer device comprises a memory and a processor. The memory stores a computer program. The processor implements the steps of the optical proximity effect correction method 1000 of the above embodiments when executing the computer program.

[0110] The internal structure of the computer device 3000 can be as shown in Figure 7 The computer device comprises a processor, a memory, an input / output interface (I / O), and a communication interface. The processor, the memory, and the input / output interface are connected through a system bus. The communication interface is connected to the system bus through the input / output interface. The processor of the computer device 3000 is used to provide computing and control capabilities. The memory of the computer device comprises a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program, and a database. The internal memory provides an environment for the operating system and the computer program in the non-volatile storage medium to run. The database of the computer device 3000 is used to store the first process compensation value table and the second process compensation value table. The input / output interface of the computer device 3000 is used to exchange information between the processor and external devices.

[0111] The computer device 3000 can be a server. The communication interface of the computer device 3000 is used to communicate with external terminals through a network connection. The computer program is executed by the processor to implement the optical proximity effect correction method 1000.

[0112] The computer device 3000 can be a terminal. The communication interface of the computer device 3000 is used to communicate with external terminals in a wired or wireless manner. The wireless manner can be achieved by WIFI, mobile cellular network, NFC (near field communication), or other technologies. The computer program is executed by the processor to implement the optical proximity effect correction method 1000.

[0113] The display unit of the computer device 3000 is used to form a visually visible picture, which can be a display screen, a projection device or a virtual reality imaging device. The display screen can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer device 3000 can be a touch layer overlaid on the display screen, or a key, trackball or touchpad arranged on the computer device shell, or an external keyboard, touchpad or mouse, etc.

[0114] Those skilled in the art can understand that, Figure 7 The structure shown in the above is only a block diagram of part of the structure related to the scheme of the present application, and does not constitute a limitation on the computer device 3000 to which the scheme of the present application is applied. Specifically, the computer device 3000 can include more or fewer components than those shown in the above, or combine certain components, or have a different arrangement of components. Figure 7

[0115] Exemplarily, the present application provides a computer readable storage medium, which stores a computer program. When the computer program is executed by a processor, the steps of the foregoing method embodiments are implemented.

[0116] Exemplarily, the present application also provides a computer program product. The computer program product includes a computer program. When the computer program is executed by a processor, the steps of the foregoing method embodiments are implemented. The above-mentioned apparatus, computer device 3000, storage medium and computer program product can be used to correct the initial layout by implementing the steps of the foregoing method, which is conducive to quickly and efficiently obtaining the final layout.

[0117] ​Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing relevant hardware through a computer program. The computer program can be stored in a non-volatile computer readable storage medium, and when executed, can include the processes of the above-mentioned embodiment methods. Any reference to memory, database or other medium used in the embodiments provided in the present application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical storage, high-density embedded non-volatile memory, resistive memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration but not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc. The database involved in the embodiments provided in the present application can include at least one of a relational database and a non-relational database. The non-relational database can include a distributed database based on a block chain, etc., without being limited thereto. The processor involved in the embodiments provided in the present application can be a general-purpose processor, a central processing unit, a graphics processing unit, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, etc., without being limited thereto.

[0118] Reference Figure 8 The embodiments of the present application provide a mask 100. The layout of the mask 100 can be the process layout 9, which is obtained according to the steps of the aforementioned optical proximity correction method 1000. The mask 100 can be used to manufacture a product with accurate patterns and high development efficiency.

[0119] Exemplarily, the mask 100 adopts a large-exposure-small-technology solution, i.e., the pattern size of the process layout 9 is larger than the process pattern 10 obtained by exposure. The mask 100 can increase the exposure process window, improve the overlay alignment tolerance, and reduce the sensitivity to process fluctuations; compensate for edge placement error, and optimize the optical proximity effect. The development and etching processes will further reduce the pattern size, and the enlarged mask 100 size can reserve sufficient process window to avoid size deviation caused by incomplete development or over-etching.

[0120] After the photoresist layer 200 is exposed by using the mask 100, the process pattern 10 can be obtained, and then the photoresist layer 200 is developed, and then the semiconductor structure can be etched by using the photoresist layer 200 or further including a hard mask, and the semiconductor structure 300 can be obtained. Subsequently, the remaining photoresist layer 200 and the hard mask can be removed, and the material can be filled in the hole of the semiconductor structure 300.

[0121] The application provides a semiconductor structure 300, which is manufactured according to the foregoing mask 100 and has good performance. The semiconductor structure 300 can have different regions, which can be manufactured by using a plurality of different masks 100 respectively. The pattern corresponding to each mask 100 can be the same node or different nodes. The semiconductor structure 300 can include various patterns such as conductive channels, vias, gate lines, etc., and the critical dimension and process node can be determined according to different patterns.

[0122] The technical features of the above-disclosed embodiments can be combined in any manner. In order to make the description concise, not all possible combinations of the technical features in the above-described embodiments are described, but it should be considered that any combination of the technical features is within the scope of the present disclosure as long as there is no contradiction.

[0123] It should be understood that, although each step in the flowchart involved in the above-described embodiments is displayed in sequence according to the arrow, these steps are not necessarily executed in sequence according to the arrow. Unless otherwise stated herein, the execution of these steps is not strictly limited in sequence, and these steps can be executed in other sequences. Moreover, at least part of the steps in the flowchart involved in the above-described embodiments can include multiple steps or stages, which are not necessarily executed at the same time, but can be executed at different times, and the execution sequence of these steps or stages is not necessarily sequential, but can be executed alternately or alternately with at least part of other steps or steps or stages in other steps.

[0124] The above disclosed embodiments only express several implementation manners of the present application, which are described in a more specific and detailed manner, but cannot be understood as a limitation on the patent protection scope of the present application. It should be noted that, for ordinary skilled persons in the art, several modifications and improvements can be made without departing from the concept of the present application, which all belong to the patent protection scope required by the present application. Therefore, the patent protection scope of the present application should be subject to the appended claims.

Claims

1. A method of optical proximity correction, characterized in that, The method comprises: obtaining a first correction basis of the target pattern based on a plurality of patterns included in the target pattern; determining a first preset compensation value corresponding to the first correction basis from a first process compensation table according to the first correction basis; and correcting an initial layout corresponding to the target pattern into a first corrected layout according to the first preset compensation value. The step of obtaining the first correction basis comprises: obtaining a process node of the target pattern based on a key pattern in the plurality of patterns; 2. The optical proximity correction method according to claim 1, wherein The step of determining the first preset compensation value comprises: determining a first preset compensation value corresponding to the process node according to the process node. The first process compensation table is configured to: in response to the process node being 90 nm, 110 nm or 130 nm, the first preset compensation value ranges from 10 nm to 15 nm; in response to the process node being 55 nm or 65 nm, the first preset compensation value ranges from 5 nm to 10 nm; and in response to the process node being 28 nm or 40 nm, the first preset compensation value ranges from 2 nm to 5 nm.

3. The optical proximity correction method according to claim 2, wherein The method further comprises:

4. The optical proximity correction method according to claim 2 or 3, characterized in that, obtaining a critical dimension and a minimum spacing value of a periphery of each of a plurality of corrected patterns based on the first corrected layout; obtaining a second preset compensation value of each of the corrected patterns from a second process compensation table according to the critical dimension and the minimum spacing value of each of the corrected patterns; and correcting the first corrected layout into a second corrected layout according to the plurality of second preset compensation values. The second process compensation table is configured to: The unit of data in the second process compensation table is nm.

5. The optical proximity correction method according to claim 4, wherein The step of obtaining the first correction basis comprises: obtaining a critical dimension and a minimum spacing value of a periphery of each of the patterns; The step of determining the first preset compensation value comprises: dividing the target pattern into a dense area and a sparse area according to a plurality of critical dimensions and a plurality of minimum spacing values of the plurality of patterns; and the range of a sparse area compensation value k2 of the sparse area is 1.2 times to 1.5 times of a dense area compensation value k1 of the dense area.

6. The optical proximity correction method of claim 1, wherein, The step of obtaining the first correction basis comprises: obtaining a critical dimension and a minimum spacing value of a periphery of each of the patterns; The step of determining the first preset compensation value comprises: determining a first preset compensation value of each of the patterns from the first process compensation table according to a plurality of critical dimensions and a plurality of minimum spacing values of the plurality of patterns; 7. The optical proximity correction method of claim 1, wherein, The step of correcting the initial layout comprises: performing the correction according to the plurality of first preset compensation values. The first process compensation table is: The unit of data in the first process compensation table is nm.

8. The optical proximity correction method according to claim 7, wherein The method further comprises: performing a smoothing calculation on the initial layout to obtain a smoothed pattern as the target pattern; 9. The optical proximity correction method of claim 1, wherein, performing an iteration process based on the first corrected layout, comprising: performing simulation on an iteration layout to obtain a simulation pattern, calculating an edge placement error of the simulation pattern and the smoothed pattern, and correcting the iteration layout into a next iteration layout according to the edge placement error. The method comprises: a first extraction module configured to obtain a first correction basis of a target pattern based on a plurality of patterns included in the target pattern; 10. An optical proximity correction device, characterized in that, ​ ​ The first selection module is configured to determine a first preset compensation value corresponding to the first correction basis from a first process compensation table according to the first correction basis. And The first correction module is configured to correct an initial layout corresponding to the target pattern into a first corrected layout according to the first preset compensation value. 11.A computer device, comprising a memory and a processor, wherein the memory stores a computer program, and the computer device is characterized in that, The processor executes the computer program to implement the steps of the method in any one of claims 1 to 10.

12. A computer readable storage medium having stored thereon a computer program, characterized in that, The computer program is executed by the processor to implement the steps of the method in any one of claims 1 to 10.

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