Lead frame and semiconductor device

Abstract

To reduce the area required for bonding a lead frame body to a heat sink.SOLUTION: A lead frame comprises a heat sink having a mounting surface for mounting a semiconductor element and a unit lead frame having leads. The heat sink has a groove portion at the periphery of the mounting surface. The unit lead frame has a protrusion at its tip that corresponds to the groove portion. The protrusion engages with the groove portion, securing the heat sink to the unit lead frame.SELECTED DRAWING: Figure 2A

Description

[Technical Field]

[0001] The disclosed embodiments relate to a lead frame and a semiconductor device. [Background technology]

[0002] For example, in a semiconductor device that incorporates a semiconductor element that controls a large current, such as a power semiconductor element, a known method is to bond a heat sink to the lead frame body and place the semiconductor element directly on the heat sink in order to efficiently dissipate the heat generated by the semiconductor element. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2001-144242 Summary of the Invention [Problem to be solved by the invention]

[0004] On the other hand, in the above-mentioned conventional technology, the lead frame body and the heat sink are joined by crimping, which requires a large area for the crimping process, which means that the above-mentioned conventional technology requires extra space inside the semiconductor device for the crimping process, which may be disadvantageous in manufacturing the semiconductor device.

[0005] One aspect of the embodiment has been made in consideration of the above, and aims to provide a lead frame and a semiconductor device that can reduce the area required for joining the lead frame body and the heat sink. [Means for solving the problem]

[0006] A lead frame according to one aspect of the embodiment includes a heat sink having a mounting surface on which a semiconductor element is mounted, and a unit lead frame having leads. The heat sink has a groove on the periphery of the mounting surface. The unit lead frame has a protrusion whose tip has a shape corresponding to the groove. The protrusion fits into the groove, thereby fixing the heat sink to the unit lead frame.

[0007] A semiconductor device according to one aspect of the embodiment includes the lead frame described above and a semiconductor element mounted on the mounting surface.

[0008] According to one aspect of the embodiment, the area required for bonding the lead frame body and the heat sink can be reduced. Note that the effects described here are not necessarily limited to those described herein, and may be any of the effects described in this disclosure. [Brief explanation of the drawings]

[0009] [Figure 1A] FIG. 1A is a plan view and a side view showing an example of a heat sink according to an embodiment. [Figure 1B] FIG. 1B is an enlarged plan view showing an example of a lead frame body according to an embodiment. [Figure 2A] FIG. 2A is an enlarged plan view showing an example of a lead frame according to an embodiment. [Figure 2B] FIG. 2B is a cross-sectional view taken along line AA in FIG. 2A. [Figure 3A] FIG. 3A is an enlarged plan view showing an example of a bonding region between a heat sink and a unit lead frame according to the embodiment. [Figure 3B] FIG. 3B is a cross-sectional view taken along line BB in FIG. 3A. [Figure 4A] FIG. 4A is a plan view showing an example of a semiconductor device according to the embodiment. [Figure 4B] FIG. 4B is a cross-sectional view taken along the line CC in FIG. 4A. [Figure 5A]FIG. 5A is an enlarged cross-sectional view showing an example of a bonding region between a heat sink and a unit lead frame according to a first modification of the embodiment. [Figure 5B] FIG. 5B is an enlarged plan view showing an example of a bonding region between a heat sink and a unit lead frame according to the second modification of the embodiment. [Figure 6A] FIG. 6A is an enlarged plan view showing an example of a bonding region between a heat sink and a unit lead frame according to a third modification of the embodiment. [Figure 6B] FIG. 6B is an enlarged plan view showing another example of the bonding region between the heat sink and the unit lead frame according to the third modification of the embodiment. [Figure 7A] FIG. 7A is an enlarged plan view showing an example of a bonding region between a heat sink and a unit lead frame according to a fourth modification of the embodiment. [Figure 7B] FIG. 7B is an enlarged plan view showing an example of a bonding region between a heat sink and a unit lead frame according to the fifth modification of the embodiment. [Figure 8A] FIG. 8A is an enlarged plan view showing an example of a bonding region between a heat sink and a unit lead frame according to a sixth modification of the embodiment. [Figure 8B] FIG. 8B is an enlarged plan view showing an example of a bonding region between a heat sink and a unit lead frame according to the seventh modification of the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010] The lead frame and semiconductor device disclosed in the present application will be described below with reference to the accompanying drawings. Note that the present disclosure is not limited to the following embodiments.

[0011] It should be noted that the drawings are schematic and that the dimensional relationships and ratios of elements may differ from reality. Furthermore, the drawings may contain parts whose dimensional relationships and ratios differ from one another.

[0012] <Heat sink> First, the configuration of a heat sink 10 constituting a lead frame 1 (see FIG. 2A) according to an embodiment will be described with reference to FIG. 1A. FIG. 1A is a plan view and a side view showing an example of a heat sink 10 according to an embodiment.

[0013] The heat sink 10 functions as a die pad for a semiconductor device 100 (see FIG. 4A), which will be described later. As shown in FIG. 1A, the heat sink 10 according to the embodiment is flat, and one of its main surfaces is a mounting surface 11 on which a semiconductor element 30 (see FIG. 4A) is mounted. The heat sink 10 also has a back surface 12 on the opposite side of the mounting surface 11.

[0014] Heat sink 10 has, for example, a rectangular shape in a plan view, and has grooves 13 on the periphery of mounting surface 11 that contact two opposing sides. These two grooves 13 are located, for example, at points that are point-symmetric with respect to center X1 of heat sink 10. Groove 13 has, for example, a rectangular parallelepiped shape, and can be formed by pressing or etching.

[0015] The heat sink 10 is made of a metal with good thermal conductivity, such as copper or a copper alloy, etc. The heat sink 10 is not limited to a rectangular shape in plan view, and may have a wide variety of planar shapes.

[0016] <Lead frame body> Next, the configuration of the lead frame body 20 constituting the lead frame 1 (see FIG. 2A) according to the embodiment will be described with reference to FIG. 1B. FIG. 1B is an enlarged plan view showing an example of the lead frame body 20 according to the embodiment.

[0017] The lead frame body 20 according to the embodiment is a member in which a predetermined pattern is formed on a metal plate made of copper, a copper alloy, an iron-nickel alloy, or the like by pressing or etching.

[0018] The lead frame body 20 according to the embodiment has, for example, a band shape in a plan view, and a plurality of unit lead frames 20A are formed lined up along the longitudinal direction. Note that in the present disclosure, a plurality of unit lead frames 20A may be formed lined up not only along the longitudinal direction of the lead frame body 20 but also along the width direction.

[0019] 1B, each unit lead frame 20A has a plurality of leads 21 and a plurality of protrusions 22. Adjacent unit lead frames 20A are connected to each other by a connecting bar 23.

[0020] The leads 21 function as connection terminals of the semiconductor device 100 (see FIG. 4A). The leads 21 are located, for example, around a central portion X2 of the unit lead frame 20A. The leads 21 are supported on the connecting bar 23 by, for example, a dam bar 24.

[0021] The protrusion 22 is supported by, for example, the connecting bar 23 and extends from the connecting bar 23 toward the inside of the unit lead frame 20A (for example, toward the central portion X2). For example, one protrusion 22 is provided on each of the connecting bars 23 on both sides that contact one unit lead frame 20A.

[0022] Tips 22a (see FIG. 3A) of protrusions 22 have a shape corresponding to grooves 13 (see FIG. 1A) of heat sink 10 (see FIG. 1A) in a plan view.

[0023] The pilot holes 25 are formed side by side on both sides of the strip-shaped lead frame body 20 and are used to position the lead frame body 20 and the lead frame 1 in various processes.

[0024] <Lead frame> Next, a detailed configuration of the lead frame 1 according to the embodiment will be described with reference to Figures 2A to 3B. Figure 2A is an enlarged plan view showing an example of the lead frame 1 according to the embodiment. Figure 2B is a cross-sectional view taken along line AA shown in Figure 2A.

[0025] The lead frame 1 according to the embodiment has, for example, a band shape in a plan view, and is formed with a plurality of unit lead frames 1A arranged along the longitudinal direction. Each unit lead frame 1A corresponds to one of the semiconductor devices 100 (see FIG. 4A) manufactured using the lead frame 1.

[0026] Adjacent unit lead frames 1A are connected to each other by connecting bars 23. In the present disclosure, a plurality of unit lead frames 1A may be formed side by side not only along the longitudinal direction of the lead frame 1 but also along the width direction.

[0027] 2A, the unit lead frame 1A has a heat sink 10 and a unit lead frame 20A. In the unit lead frame 1A, for example, the center X1 (see FIG. 1A) of the heat sink 10 is located at the same position as or close to the center X2 (see FIG. 1B) of the unit lead frame 20A in a plan view.

[0028] In the unit lead frame 1A, the leads 21 and the protrusions 22 are located around the heat sink 10, for example.

[0029] Here, in an embodiment, as shown in Figures 2A and 2B, the tip portion 22a of the protrusion portion 22 on the unit lead frame 20A may be fitted into the groove portion 13 of the heat sink 10, thereby fixing the heat sink 10 to the unit lead frame 20A.

[0030] This reduces the area required for bonding compared to when the heat sink 10 is fixed to the lead frame body 20 by crimping. Therefore, according to the embodiment, the area required for bonding the lead frame body 20 and the heat sink 10 can be reduced.

[0031] For example, when a semiconductor element 30 (see Figure 4A) with the same specifications is mounted, the width of the bonding area required by the crimping process of the conventional technology is 2.11 mm, whereas with the present disclosure, the width of the required bonding area can be reduced to 0.55 mm.

[0032] Furthermore, in the conventional crimping process, the embossment required for the crimping process had to be formed by pressing the heat sink 10 to form a large convex shape. However, in the embodiment, the groove 13 can be formed in the heat sink 10 by ordinary pressing or etching.

[0033] That is, in the embodiment, the grooves 13 can be formed in parallel with the various press processes and etching processes that are performed when manufacturing the heat sink 10, thereby simplifying the manufacturing process of the heat sink 10.

[0034] Furthermore, in the conventional crimping process, the heat sink 10 needs to be pressed to form the embossments required for the crimping process, which results in the formation of recesses in the rear surface 12 of the heat sink 10 at positions corresponding to the embossments. As a result, in the conventional process, the effective area of ​​the rear surface 12, which is the heat dissipation surface of the semiconductor device 100, becomes smaller, which may result in a deterioration in the heat dissipation characteristics of the semiconductor device 100.

[0035] On the other hand, in the lead frame 1 according to the embodiment, the rear surface 12 of the heat sink 10 can be made entirely flat, as shown in FIG. 2B, and therefore the heat dissipation characteristics of the semiconductor device 100 are improved.

[0036] In addition, in the embodiment, one heat sink 10 may be fixed to the unit lead frame 20A by fitting the multiple protrusions 22 into the multiple grooves 13, respectively. This increases the number of fixing points between the heat sink 10 and the unit lead frame 20A, allowing the heat sink 10 to be stably fixed to the unit lead frame 20A.

[0037] Therefore, according to the embodiment, when manufacturing the semiconductor device 100, it is possible to prevent the heat sink 10 from being detached from the unit lead frame 20A, and therefore the semiconductor device 100 can be manufactured stably.

[0038] 1A to 2B show an example in which one unit lead frame 1A is provided with two grooves 13 and two protrusions 22, but the present disclosure is not limited to such an example. For example, one unit lead frame 1A may be provided with one groove 13 and one protrusion 22, or one unit lead frame 1A may be provided with three or more grooves 13 and three or more protrusions 22.

[0039] In addition, in the embodiment, the two grooves 13 may be located at positions that are point-symmetrical with respect to the center X1 (FIG. 1A) of the heat sink 10. This allows the heat sink 10 to be fixed to the unit lead frame 20A without any bias, thereby enabling the semiconductor device 100 to be manufactured stably.

[0040] 2B, the protrusion 22 may have a bent portion 22b. The bent portion 22b is located, for example, closer to the base end of the protrusion 22 than the tip portion 22a, and is bent toward one main surface (the back surface in the drawing) of the unit lead frame 20A.

[0041] This prevents tip end 22a of protrusion 22 from being flush with lead 21 (see FIG. 2A), thereby preventing heat sink 10 from being flush with lead 21. That is, in the embodiment, even when heat sink 10 and lead 21 overlap in plan view as shown in FIG. 2A, contact between heat sink 10 and lead 21 can be prevented.

[0042] Therefore, according to the embodiment, the heat sink 10 can be made larger while preventing short circuits between the heat sink 10 and the leads 21, and therefore the heat dissipation characteristics of the semiconductor device 100 are improved.

[0043] Fig. 3A is an enlarged plan view showing an example of a bonding region between the heat sink 10 and the unit lead frame 20A according to the embodiment, and Fig. 3B is a cross-sectional view taken along the line BB shown in Fig. 3A.

[0044] 3A and 3B, in an embodiment, the heat sink 10 may have two other groove portions 14 located adjacent to the groove portion 13. The two other groove portions 14 may be located, for example, so as to sandwich the groove portion 13 between them.

[0045] Alternatively, the other groove 14 may be formed by pressing the periphery of the groove 13 into a V-shape in cross section after the tip 22a of the protrusion 22 is accommodated in the groove 13.

[0046] As a result, the side surfaces 22a1 of the tip portions 22a housed in the groove portions 13 are pressed from both sides by the separate process of forming the groove portions 14, so that the heat sink 10 can be stably fixed to the unit lead frame 20A.

[0047] Therefore, according to the embodiment, when manufacturing the semiconductor device 100, it is possible to prevent the heat sink 10 from being detached from the unit lead frame 20A, and therefore the semiconductor device 100 can be manufactured stably.

[0048] Furthermore, in the embodiment, even if the width of the tip 22a of the protrusion 22 is smaller than the width of the groove 13, after the tip 22a is accommodated in the groove 13, the side surface 22a1 of the tip 22a can be pressed by a separate groove 14 formation process.

[0049] That is, in the embodiment, even if the width of the tip 22a of the protrusion 22 is smaller than the width of the groove 13, the tip 22a can be fitted into the groove 13 by forming another groove 14 in the heat sink 10.

[0050] Therefore, according to the embodiment, the tip portion 22a can be easily accommodated in the groove portion 13, and the manufacturing process of the lead frame 1 can be simplified.

[0051] In addition, in the embodiment, the heat sink 10 may have two separate grooves 14 for each groove 13. This allows pressure to be applied to the side surface 22a1 of the tip portion 22a from two directions, thereby stably fixing the heat sink 10 to the unit lead frame 20A.

[0052] Therefore, according to the embodiment, when manufacturing the semiconductor device 100, it is possible to prevent the heat sink 10 from being detached from the unit lead frame 20A, and therefore the semiconductor device 100 can be manufactured stably.

[0053] <Semiconductor device> Next, the configuration of a semiconductor device 100 using a lead frame 1 according to the embodiment will be described with reference to Figures 4A and 4B. Figure 4A is a plan view showing an example of the semiconductor device 100 according to the embodiment. Figure 4B is a cross-sectional view taken along line CC shown in Figure 4A. For ease of understanding, the sealing resin 50 is shown by a dashed line in Figure 4A.

[0054] As shown in FIGS. 4A and 4B, the semiconductor device 100 according to the embodiment includes a part of a unit lead frame 1A, a semiconductor element 30, a plurality of bonding wires 40, and a sealing resin 50.

[0055] Examples of parts of the unit lead frame 1A included in the semiconductor device 100 include the heat sink 10, the plurality of leads 21, and parts of the plurality of protrusions 22.

[0056] The semiconductor element 30 is mounted on the mounting surface 11 of the heat sink 10. A plurality of bonding wires 40 electrically connect electrodes (not shown) located on the front surface of the semiconductor element 30 to the leads 21 corresponding to these electrodes. Note that the electrical connection between the electrodes and the leads 21 is not limited to the bonding wires 40, and various conductive members such as conductive clips can be used.

[0057] The sealing resin 50 is made of, for example, epoxy resin, and is formed into a predetermined shape by a molding process, etc. The sealing resin 50 seals the semiconductor element 30, the bonding wires 40, the mounting surface 11 of the heat sink 10, and the portions of the leads 21 on the semiconductor element 30 side.

[0058] The portions of the leads 21 opposite to the semiconductor element 30 side are exposed from the sealing resin 50 and function as external terminals (outer leads) of the semiconductor device 100. In addition, the rear surface 12 of the heat sink 10 is exposed from the sealing resin 50 and is bonded to a heat dissipation member or the like (not shown).

[0059] 4A shows a case where a part of the protrusion 22 does not protrude from the sealing resin 50, but in the present disclosure, a part of the protrusion 22 on the side opposite to the semiconductor element 30 side may be exposed so as to protrude from the sealing resin 50. This allows the exposed part of the protrusion 22 to be used as a ground terminal of the semiconductor device 100, etc.

[0060] In this case, it is preferable that the ground electrode (not shown) of the semiconductor element 30 and the heat sink 10 are connected by a bonding wire 40, a conductive clip, or the like.

[0061] 3A and 3B, another groove 14 is provided around the groove 13, thereby improving the adhesion between the heat sink 10 and the protrusion 22. Therefore, according to the embodiment, when the exposed portion of the protrusion 22 is used as a ground terminal of the semiconductor device 100, the exposed portion of the protrusion 22 can function well as the terminal.

[0062] <Variation 1> Next, lead frames 1 according to various modified examples of the embodiment will be described with reference to Fig. 5A to Fig. 8B. Fig. 5A is an enlarged cross-sectional view showing an example of a bonding region between a heat sink 10 according to modified example 1 of the embodiment and a unit lead frame 20A, and corresponds to Fig. 3B of the embodiment.

[0063] 5A, in the lead frame 1 of the first modification, the cross-sectional shape of the heat sink 10 that fits with the tip 22a of the protrusion 22 (see FIG. 4A) is different from that of the above-described embodiment. Specifically, in the first modification, the heat sink 10 has a covering portion 15 that covers at least a part of the upper surface 22a2 of the tip 22a.

[0064] This covering portion 15 can be formed, for example, by forming another groove portion 14 by press working, and then pressing the portion closer to the groove portion 13 than the other groove portion 14 into a flat shape.

[0065] In the first modification, the heat sink 10 has the covering portion 15, so that the tip portion 22a is supported also from the upper surface 22a2 side, and therefore the heat sink 10 can be stably fixed to the unit lead frame 20A.

[0066] Therefore, according to the first modification, the heat sink 10 can be prevented from coming off the unit lead frame 20A when manufacturing the semiconductor device 100, and therefore the semiconductor device 100 can be manufactured stably.

[0067] <Variations 2-4> FIG. 5B is an enlarged plan view showing an example of a bonding region between the heat sink 10 and the unit lead frame 20A according to the second modification of the embodiment, and corresponds to FIG. 3A of the embodiment.

[0068] 5B, the lead frame 1 of the second modification differs from the above-described embodiment in the arrangement of the additional grooves 14. Specifically, in the second modification, the heat sink 10 has three additional grooves 14 around one groove 13.

[0069] Of these other groove portions 14, two other groove portions 14 are positioned, for example, to sandwich groove portion 13. Furthermore, another other groove portion 14 is positioned adjacent to one of the three sides of tip portion 22a that contacts heat sink 10 in plan view, which side is not adjacent to another groove portion 14.

[0070] In this way, by having three separate grooves 14 for each groove 13, the side surface 22a1 (see Figure 3B) of the tip portion 22a can be pressed from three directions, thereby stably fixing the heat sink 10 to the unit lead frame 20A.

[0071] Therefore, according to the second modification, the heat sink 10 can be prevented from coming off the unit lead frame 20A when manufacturing the semiconductor device 100, and therefore the semiconductor device 100 can be manufactured stably.

[0072] In addition, in variant example 2, even if the width of tip 22a of protrusion 22 is smaller than the width of groove 13, heat sink 10 has three separate grooves 14, so tip 22a can be fitted into groove 13.

[0073] Therefore, according to the second modification, the tip portion 22a can be easily accommodated in the groove portion 13, and the manufacturing process of the lead frame 1 can be simplified.

[0074] In the present disclosure, the number of separate grooves 14 provided for each groove 13 is not limited to two or three. For example, as shown in Fig. 6A, heat sink 10 may have one separate groove 14 for each groove 13. Fig. 6A is an enlarged plan view showing an example of a bonding region between heat sink 10 and unit lead frame 20A according to Modification 3 of the embodiment.

[0075] This also makes it possible to press the side surface 22a1 (see FIG. 3B) of the tip portion 22a from one direction, so that the heat sink 10 can be stably fixed to the unit lead frame 20A.

[0076] Therefore, according to the third modification, the heat sink 10 can be prevented from coming off the unit lead frame 20A when manufacturing the semiconductor device 100, and therefore the semiconductor device 100 can be manufactured stably.

[0077] In addition, in variant example 3, even if the width of tip 22a of protrusion 22 is smaller than the width of groove 13, heat sink 10 has another groove 14, so tip 22a can be fitted into groove 13.

[0078] Therefore, according to the third modification, the tip portion 22a can be easily accommodated in the groove portion 13, and the manufacturing process of the lead frame 1 can be simplified.

[0079] 6B is an enlarged plan view showing another example of the bonding region between the heat sink 10 and the unit lead frame 20A according to Modification 3 of the embodiment. In the example of Fig. 6B, two grooves 13 are located side by side on the same side of the heat sink 10, and two protrusions 22 are located at positions corresponding to the two grooves 13, respectively.

[0080] 6B, the entire joint group, which is made up of two grooves 13 and two protrusions 22, may be pressed from both sides by a pair of other grooves 14. In this way, the entire joint group is pressed from both sides by the process of forming the other grooves 14, so that the heat sink 10 can be stably fixed to the unit lead frame 20A.

[0081] Therefore, according to the example of FIG. 6B, it is possible to prevent the heat sink 10 from being detached from the unit lead frame 20A when manufacturing the semiconductor device 100, and therefore the semiconductor device 100 can be manufactured stably.

[0082] 7A, the heat sink 10 does not need to have another groove 14 (see FIG. 3A) near the groove 13. FIG. 7A is an enlarged plan view showing an example of a bonding region between the heat sink 10 and the unit lead frame 20A according to the fourth modification of the embodiment.

[0083] This also makes it possible for the tip portion 22 a of the protrusion 22 to fit into the groove portion 13 by making the width of the tip portion 22 a slightly larger than the width of the groove portion 13 .

[0084] Therefore, according to variant example 4, the area required for joining can be made smaller than when the heat sink 10 is fixed to the lead frame main body 20 by crimping, and therefore the area required for joining the lead frame main body 20 and the heat sink 10 can be made smaller.

[0085] <Variations 5-7> FIG. 7B is an enlarged plan view showing an example of a bonding region between the heat sink 10 and the unit lead frame 20A according to the fifth modification of the embodiment, and corresponds to FIG. 3A of the embodiment.

[0086] 7B, in the lead frame 1 of the fifth modification, the planar shapes of the grooves 13 and the tip portions 22a of the protrusions 22 are different from those of the above-described embodiment. Specifically, in the fifth modification, the grooves 13 and the tip portions 22a of the protrusions 22 each have a substantially T-shape in plan view.

[0087] As a result, the groove portion 13 of Modification 5 has a second portion 13b with a width W2 wider than the first portion 13a with a width W1 located at the end 11a of the mounting surface 11. Similarly, in Modification 5, the tip portion 22a of the protrusion 22 has a second portion 22a4 with a width W2 wider than the first portion 22a3 with a width W1 located at the end 11a of the mounting surface 11.

[0088] In this manner, in Modification 5, groove 13 has second portion 13b, and tip 22a of protrusion 22 has second portion 22a4, so that heat sink 10 can be prevented from detaching from protrusion 22 even when stress is applied to heat sink 10 in a direction away from protrusion 22. Therefore, Modification 5 allows for stable manufacture of semiconductor device 100.

[0089] In addition, in Modification 5, heat sink 10 may have two other grooves 14 located adjacent to first portion 13a. These two other grooves 14 may be located, for example, so as to sandwich first portion 13a and its vicinity therebetween.

[0090] As a result, the side surface 22a1 (see FIG. 3B) of the tip portion 22a accommodated in the groove portion 13 is pressed from both sides by the process of forming another groove portion 14, so that the heat sink 10 can be stably fixed to the unit lead frame 20A.

[0091] Therefore, according to the fifth modification, the heat sink 10 can be prevented from coming off the unit lead frame 20A when manufacturing the semiconductor device 100, and therefore the semiconductor device 100 can be manufactured stably.

[0092] 7B, the planar shapes of the grooves 13 and the tips 22a of the protrusions 22 are generally T-shaped, but the present disclosure is not limited to this example. Fig. 8A is an enlarged plan view showing an example of the bonding region between the heat sink 10 and the unit lead frame 20A according to a sixth modification of the embodiment.

[0093] As shown in FIG. 8A, in Modification 6, second portion 13b of groove 13 and second portion 22a4 of tip 22a of protrusion 22 are both substantially circular in plan view.

[0094] Even with this, groove 13 has second portion 13b with wide width W2, and protrusion 22 has second portion 22a4 with wide width W2, so that heat sink 10 can be prevented from detaching from protrusion 22 even when stress is applied to heat sink 10 in a direction away from protrusion 22. Therefore, according to modification 6, semiconductor device 100 can be manufactured stably.

[0095] In addition, in Modification 6, heat sink 10 may have two additional grooves 14 located adjacent to first portion 13a. As a result, the process of forming additional grooves 14 presses side surfaces 22a1 (see FIG. 3B) of tip portion 22a accommodated in grooves 13 from both sides, thereby enabling heat sink 10 to be stably fixed to unit lead frame 20A.

[0096] Therefore, according to the sixth modification, the heat sink 10 can be prevented from coming off the unit lead frame 20A when manufacturing the semiconductor device 100, and therefore the semiconductor device 100 can be manufactured stably.

[0097] 8B is an enlarged plan view showing an example of a bonding region between the heat sink 10 and the unit lead frame 20A according to Modification 7 of the embodiment. As shown in Fig. 8B, in Modification 7, the second portion 13b of the groove portion 13 and the second portion 22a4 of the tip portion 22a of the protrusion portion 22 are both approximately trapezoidal in plan view.

[0098] Even with this, groove 13 has second portion 13b with wide width W2, and protrusion 22 has second portion 22a4 with wide width W2, so that heat sink 10 can be prevented from detaching from protrusion 22 even when stress is applied to heat sink 10 in a direction away from protrusion 22. Therefore, according to modification 7, semiconductor device 100 can be manufactured stably.

[0099] In addition, in the seventh modification, the heat sink 10 may have two additional grooves 14 located adjacent to the first portion 13a. As a result, the side surfaces 22a1 (see FIG. 3B) of the tip portion 22a accommodated in the grooves 13 are pressed from both sides by the process of forming the additional grooves 14, so that the heat sink 10 can be stably fixed to the unit lead frame 20A.

[0100] Therefore, according to the seventh modification, the heat sink 10 can be prevented from coming off the unit lead frame 20A when manufacturing the semiconductor device 100, and therefore the semiconductor device 100 can be manufactured stably.

[0101] Although the embodiments of the present disclosure have been described above, the present disclosure is not limited to the above-described embodiments and various modifications are possible without departing from the spirit of the present disclosure. For example, in the above-described embodiments, an example in which two leads 21 are provided on one unit lead frame 1A is shown, but the present disclosure is not limited to such an example, and the number and arrangement of the leads 21 may be changed as appropriate depending on the specifications required for the semiconductor device 100.

[0102] Further advantages and modifications may readily occur to those skilled in the art. Therefore, the disclosure in its broader aspects is not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications may be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.

[0103] The present technology can also be configured as follows. (1) a heat sink having a mounting surface on which a semiconductor element is mounted; a unit lead frame having leads; Equipped with the heat sink has a groove on the periphery of the mounting surface, the unit lead frame has a protrusion having a tip end corresponding to the groove, The projections are fitted into the grooves, thereby fixing the heat sink to the unit lead frame. Lead frame. (2) the heat sink has a plurality of the grooves, the unit lead frame has a plurality of the protrusions, The plurality of protrusions are fitted into the plurality of grooves, respectively, thereby fixing the heat sink to the unit lead frame. The lead frame according to (1) above. (3) The heat sink has another groove located adjacent to the groove. The lead frame according to (1) or (2) above. (4) The heat sink has a plurality of the other grooves for each of the grooves. The lead frame according to (3) above. (5) The groove has a second portion that is wider than a first portion located at an end of the mounting surface. The lead frame according to any one of (1) to (4) above. (6) The lead frame according to any one of (1) to (5), a semiconductor element mounted on the mounting surface. A semiconductor device characterized by: [Explanation of symbols]

[0104] 1 lead frame 1A unit lead frame 10 Heat sink 11 Mounting surface 11a End 13 Groove 13a Part 1 13b 2nd part 14 Another groove 20 Lead frame body 20A unit lead frame 21 Lead 22 Protrusion 22a Tip 22a3 Part 1 22a4 2nd part 30 Semiconductor elements 40 Bonding Wire 50 Sealing resin 100 Semiconductor device W1, W2 width

Claims

1. a heat sink having a mounting surface on which a semiconductor element is mounted; a unit lead frame having leads; Equipped with the heat sink has a groove on the periphery of the mounting surface, the unit lead frame has a protrusion having a tip end corresponding to the groove, The projections are fitted into the grooves, thereby fixing the heat sink to the unit lead frame. Lead frame.

2. the heat sink has a plurality of the grooves, the unit lead frame has a plurality of the protrusions, The plurality of protrusions are fitted into the plurality of grooves, respectively, thereby fixing the heat sink to the unit lead frame. The lead frame of claim 1 .

3. The heat sink has another groove located adjacent to the groove.

3. The lead frame according to claim 1 or 2.

4. The heat sink has a plurality of the other grooves for each of the grooves. The lead frame of claim 3 .

5. The groove has a second portion that is wider than a first portion located at an end of the mounting surface.

3. The lead frame according to claim 1 or 2.

6. The lead frame according to claim 1 or 2; a semiconductor element mounted on the mounting surface. A semiconductor device characterized by:

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