Substrate processing system

Abstract

To reduce the footprint of a substrate processing system.SOLUTION: A substrate processing system includes one or more process modules and a vacuum transfer module. At least one process module and the vacuum transfer module are arranged such that at least part of the process module and at least part of the vacuum transfer module overlap when viewed from above.SELECTED DRAWING: Figure 6

Description

[Technical Field]

[0001] Various aspects and embodiments of the present disclosure relate to a substrate processing system. [Background technology]

[0002] Patent Document 1 states that "each processing tool 200 includes an enhanced front end module (EFEM) 204 configured to house at least a portion of a load lock 208." Patent Document 1 also states that "the load lock 208 extends into the interior of the EFEM 204 rather than being located outside the EFEM 204 in a gap between the EFEM 204 and a vacuum transfer module (VTM) 212." [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2020-510310 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a substrate processing system that can reduce the footprint of the substrate processing system. [Means for solving the problem]

[0005] One aspect of the present disclosure is a substrate processing system including one or more process modules and a vacuum transfer module, wherein at least one of the process modules and the vacuum transfer module are arranged such that at least a portion of the process module and at least a portion of the vacuum transfer module overlap in a top view. [Effects of the Invention]

[0006] Various aspects and embodiments of the present disclosure may reduce the footprint of a substrate processing system. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a plan view illustrating an example of a substrate processing system according to an embodiment. [Figure 2] FIG. 2 is a side view showing an example of the substrate processing system as seen from the direction of arrow C in FIG. [Figure 3] FIG. 3 is a side view showing an example of the substrate processing system as seen from the direction of arrow D in FIG. [Figure 4] FIG. 4 is a side view showing an example of the substrate processing system as seen from the direction of arrow E in FIG. [Figure 5] FIG. 5 is a diagram illustrating an example of the rear surface of the substrate processing system illustrated in FIG. [Figure 6] FIG. 6 is a schematic cross-sectional view showing an example of the AA cross section of the substrate processing system illustrated in FIGS. 1 and 5. In FIG. [Figure 7] FIG. 7 is a schematic cross-sectional view showing an example of the cross section BB of the substrate processing system illustrated in FIGS. 1 and 5. In FIG. [Figure 8] FIG. 8 is a schematic cross-sectional view showing an example of a PM. [Figure 9] FIG. 9 is a diagram showing an example of a substrate transport process. [Figure 10] FIG. 10 is a diagram showing an example of a substrate transport process. [Figure 11] FIG. 11 is a diagram showing an example of a process of transferring a substrate. [Figure 12] FIG. 12 is a diagram showing an example of a substrate transport process. [Figure 13] FIG. 13 is a diagram showing an example of a process of transferring a substrate. [Figure 14] FIG. 14 is a diagram showing an example of the positional relationship between the placement unit and the arm unit. [Figure 15] FIG. 15 is a diagram showing an example of a substrate transport process. [Figure 16] FIG. 16 is a diagram showing an example of a process of transferring a substrate. [Figure 17]FIG. 17 is a diagram showing an example of a substrate transport process. [Figure 18] FIG. 18 is a diagram showing an example of a substrate transport process. [Figure 19] FIG. 19 is a diagram showing an example of a process of transferring a substrate. [Figure 20] FIG. 20 is a diagram showing an example of a substrate transport process. [Figure 21] FIG. 21 is a diagram showing an example of a substrate transport process. [Figure 22] FIG. 22 is a diagram showing an example of a substrate transport process. [Figure 23] FIG. 23 is a schematic cross-sectional view showing another example of a substrate processing system. [Figure 24] FIG. 24 is a schematic cross-sectional view showing another example of a substrate processing system. [Figure 25] FIG. 25 is a schematic cross-sectional view showing another example of a substrate processing system. [Figure 26] FIG. 26 is a schematic cross-sectional view showing another example of a substrate processing system. [Figure 27] FIG. 27 is a schematic cross-sectional view showing another example of a substrate processing system. [Figure 28] FIG. 28 is a schematic cross-sectional view showing another example of a substrate processing system. DETAILED DESCRIPTION OF THE INVENTION

[0008] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a substrate processing system will now be described in detail with reference to the accompanying drawings. However, the substrate processing system disclosed below is not limited to the following embodiments.

[0009] Increasing the number of substrates that can be processed per unit time can be achieved by increasing the number of processing modules that perform processing on the substrates. Increasing the number of processing modules increases the size of the substrate processing system, which includes multiple processing modules, vacuum transfer modules, load lock modules, and atmospheric transfer modules. As the size of the substrate processing system increases, the installation area (footprint) of the substrate processing system in a facility such as a clean room increases, making it difficult to arrange multiple substrate processing systems. Therefore, there is a demand for reducing the installation area of ​​the substrate processing system.

[0010] Therefore, the present disclosure provides a technique that can reduce the installation area of ​​a substrate processing system.

[0011] [Configuration of substrate processing system 10] FIG. 1 is a plan view showing an example of a substrate processing system 10 according to an embodiment. FIG. 2 is a side view showing an example of the substrate processing system 10 as viewed from the direction of arrow C in FIG. 1. FIG. 3 is a side view showing an example of the substrate processing system 10 as viewed from the direction of arrow D in FIG. 1. FIG. 4 is a side view showing an example of the substrate processing system 10 as viewed from the direction of arrow E in FIG. 1. FIG. 5 is a diagram showing an example of the rear surface of the substrate processing system 10 shown in FIG. 1 illustrates the substrate processing system 10 as well as a control device 12 that controls the entire substrate processing system 10.

[0012] The substrate processing system 10 includes a VTM (Vacuum transfer module) 20, a plurality of PMs (Process Modules) 30, a LLM (Load Lock Module) 40, an EFEM (Equipment Front End Module) 50, and a plurality of LPs (Load Ports) 60.

[0013] The VTM 20 is configured to transport the substrate W in a vacuum atmosphere. In this specification, "vacuum" refers to a pressure lower than atmospheric pressure. The VTM 20 is configured to transport the substrate W between the PM 30 and the LLM 40, or between multiple PMs 30, in a vacuum atmosphere. In this embodiment, at least one PM 30 and the VTM 20 are arranged such that at least a portion of the PM 30 overlaps with at least a portion of the VTM 20 in a top view. In this embodiment, a top view refers to a view of the top surface from the vertical direction. In the examples of FIGS. 1 to 5, the VTM 20 is arranged above at least one PM 30 in a top view. In the examples of FIGS. 1 to 5, the substrate processing system 10 includes one VTM 20, but the disclosed technology is not limited to this, and the substrate processing system 10 may include more than one VTM 20.

[0014] Each PM 30 performs a process such as etching or film formation (e.g., plasma processing) on ​​the substrate W. Each PM 30 may perform the same process or different processes in the manufacturing process. In the example of FIGS. 1 to 5, the substrate processing system 10 includes eight VTMs 20, but the disclosed technology is not limited to this, and the number of PMs 30 included in the substrate processing system 10 may be less than eight or more than eight.

[0015] 1 to 5, the shape of each PM 30 in top view is square, but the disclosed technology is not limited to this. The shape of each PM 30 in top view may be, for example, a polygon (including a triangle, a quadrangle (e.g., a rectangle, a diamond, a trapezoid), a pentagon, a hexagon, or an octagon), a circle, an ellipse, or the like.

[0016] The LLM 40 can switch the internal pressure between a vacuum atmosphere and atmospheric pressure. The LLM 40 and at least one PM 30 are arranged such that at least a portion of the PM 30 overlaps with at least a portion of the LLM 40 in a top view. In this embodiment, at least a portion of the VTM 20 is arranged between the at least one PM 30 and the LLM 40. In this embodiment, the VTM 20, the at least one PM 30, and the LLM 40 are arranged such that at least a portion of the VTM 20, at least a portion of the PM 30, and at least a portion of the LLM 40 overlap with each other in a top view. In the example of FIGS. 1 to 5, the LLM 40 is arranged above the VTM 20. In the example of FIGS. 1 to 5, the substrate processing system 10 includes one LLM 40, but the disclosed technology is not limited thereto, and the substrate processing system 10 may include more than one LLM 40.

[0017] The EFEM 50 is configured to transfer a substrate W in an atmospheric pressure environment. The EFEM 50 is an example of an atmospheric transfer module. A plurality of LPs 60 are provided on a side wall of the EFEM 50. A gate valve 51 is provided on a side wall of the EFEM 50 corresponding to each LP 60, as shown in FIG. 4, for example. The EFEM 50 is configured to transfer a substrate W between a front-opening unified pod (FOUP) installed in each LP 60 and the LLM 40 in an atmospheric pressure environment. In the example of FIGS. 1 to 5, the substrate processing system 10 includes one EFEM 50, but the disclosed technology is not limited thereto, and the number of EFEMs 50 included in the substrate processing system 10 may be more than one. Furthermore, in the example of FIGS. 1 to 5, the substrate processing system 10 includes three LPs 60, but the disclosed technology is not limited thereto, and the number of LPs 60 included in the substrate processing system 10 may be less than three or more than three.

[0018] The substrate processing system 10 may be provided with an alignment module that adjusts the position and orientation of the substrate W. The apparatus in which the alignment module is provided is not particularly limited, but the alignment module may be provided, for example, in the VTM 20, the EFEM 50, or the LLM 40.

[0019] The controller 12 processes computer-executable instructions that cause the substrate processing system 10 to perform the various processes described herein. The controller 12 may be configured to control each element of the substrate processing system 10 to perform the various processes described herein. In one embodiment, part or all of the controller 12 may be included in the substrate processing system 10. The controller 12 may be implemented by a computer 12a including, for example, a processing unit 12a1, a storage unit 12a2, and a communication interface 12a3. The processing unit 12a1 may be configured to read a program from the storage unit 12a2 and execute the read program to perform various control operations. The program may be pre-stored in the storage unit 12a2 or may be acquired via a medium when needed. The acquired program is stored in the storage unit 12a2 and read from the storage unit 12a2 by the processing unit 12a1 for execution. The medium may be various storage media readable by the computer 12a or a communication line connected to the communication interface 12a3. The processing unit 12a1 may be a CPU (Central Processing Unit). The storage unit 12a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 12a3 may communicate with the substrate processing system 10 via a communication line such as a local area network (LAN).

[0020] Fig. 6 is a schematic cross-sectional view showing an example of the AA cross section of the substrate processing system 10 illustrated in Fig. 1 and Fig. 5. Fig. 7 is a schematic cross-sectional view showing an example of the BB cross section of the substrate processing system 10 illustrated in Fig. 1 and Fig. 5.

[0021] A transfer robot 52 is provided within the EFEM 50. The transfer robot 52 transfers the substrate W between the FOUP installed in the LP 60 and the LLM 40. The transfer robot 52 is movable within the EFEM 50, for example, in the direction along arrow C in FIG. 1 . The transfer robot 52 has a mounting unit 520 on which the substrate W is placed and an arm unit 521 that moves the mounting unit 520. The arm unit 521 has a cylindrical body 521a and a cylindrical body 521b. The cylindrical body 521a is disposed within the EFEM 50 so that its axis is vertical. The cylindrical body 521b is receivable within the cylindrical body 521a and is disposed within the EFEM 50 so that it is coaxial with the cylindrical body 521a. The arm unit 521 extends and contracts vertically along the axis of the cylindrical body 521a by sliding the cylindrical body 521b relative to the cylindrical body 521a, thereby moving the mounting unit 520 vertically. This allows the installation area of ​​the transfer robot 52 to be reduced.

[0022] A gate valve 42 is provided between the EFEM 50 and the LLM 40. A gate valve 43 is provided between the LLM 40 and the VTM 20. A transfer robot 41 is provided within the LLM 40. The transfer robot 41 has a platform 410 on which a substrate W is placed.

[0023] Within the VTM 20, a transfer robot 21 is provided above the PMs 30. The transfer robot 21 has a mounting part 210 on which a substrate W is placed. Furthermore, a transfer robot 22 and a transfer robot 23 are arranged in a portion of the VTM 20 sandwiched between adjacent PMs 30. The transfer robot 22 has a mounting part 220 on which a substrate W is placed. The transfer robot 23 has a mounting part 230 on which a substrate W is placed. A gate valve 31 is provided between the VTM 20 and the PMs 30, as shown in FIG. 7, for example.

[0024] [PM30 Configuration] FIG. 8 is a schematic cross-sectional view showing an example of a PM 30. In this embodiment, the PM 30 is, for example, a capacitively coupled plasma processing apparatus. The PM 30 includes a plasma processing chamber 310, a gas supply 320, a power supply 330, and an exhaust system 340. The PM 30 also includes a substrate support 311 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 310. The gas inlet includes a showerhead 313. The substrate support 311 is disposed within the plasma processing chamber 310. The showerhead 313 is disposed above the substrate support 311. In one embodiment, the showerhead 313 forms at least a portion of the ceiling of the plasma processing chamber 310. The plasma processing chamber 310 has a plasma processing space 310s defined by the showerhead 313, a sidewall 310a of the plasma processing chamber 310, and the substrate support 311. The plasma processing chamber 310 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 310s and at least one gas exhaust port for exhausting gas from the plasma processing space 310s. The plasma processing chamber 310 is grounded. The showerhead 313 and the substrate support 311 are electrically insulated from the housing of the plasma processing chamber 310. An opening 32 is formed in the sidewall 310a of the plasma processing chamber 310 to allow the substrate W to be loaded and unloaded. The opening 32 is opened and closed by a gate valve 31.

[0025] The substrate support portion 311 includes a main body portion 3111 and a ring assembly 3112. The main body portion 3111 has a central region 3111a for supporting a substrate W and an annular region 3111b for supporting the ring assembly 3112. A wafer is an example of a substrate W. The annular region 3111b of the main body portion 3111 surrounds the central region 3111a of the main body portion 3111 in a plan view. The substrate W is disposed on the central region 3111a of the main body portion 3111, and the ring assembly 3112 is disposed on the annular region 3111b of the main body portion 3111 so as to surround the substrate W on the central region 3111a of the main body portion 3111. The central region 3111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 3111b is also referred to as a ring support surface for supporting the ring assembly 3112.

[0026] In one embodiment, the main body 3111 includes a base 31110 and an electrostatic chuck 31111. The base 31110 includes a conductive member. The conductive member of the base 31110 can function as a lower electrode. The electrostatic chuck 31111 is disposed on the base 31110. The electrostatic chuck 31111 includes a ceramic member 31111a and an electrostatic electrode 31111b disposed within the ceramic member 31111a. The ceramic member 31111a has a central region 3111a. In one embodiment, the ceramic member 31111a also has an annular region 3111b. Note that another member surrounding the electrostatic chuck 31111, such as an annular electrostatic chuck or an annular insulating member, may also have the annular region 3111b. In this case, the ring assembly 3112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 31111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF (Radio Frequency) power supply 331 and / or a DC (Direct Current) power supply 332 (described later) may be disposed within the ceramic member 31111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal (described later) is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that a conductive member of the base 31110 and the at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, the electrostatic electrode 31111b may function as the lower electrode. The substrate support 311 includes at least one lower electrode.

[0027] The ring assembly 3112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0028] The substrate support 311 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 31111, the ring assembly 3112, and the substrate W to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 31110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow path 31110a. In one embodiment, the flow path 31110a is formed in the base 31110, and one or more heaters are disposed in the ceramic member 31111a of the electrostatic chuck 31111. The substrate support 311 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 3111a.

[0029] The showerhead 313 is configured to introduce at least one process gas from the gas supply unit 320 into the plasma processing space 310s. The showerhead 313 has at least one gas supply port 313a, at least one gas diffusion chamber 313b, and multiple gas inlets 313c. The process gas supplied to the gas supply port 313a passes through the gas diffusion chamber 313b and is introduced into the plasma processing space 310s from the multiple gas inlets 313c. The showerhead 313 also includes at least one upper electrode. In addition to the showerhead 313, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 310a.

[0030] The gas supply 320 may include at least one gas source 321 and at least one flow controller 322. In one embodiment, the gas supply 320 is configured to supply at least one process gas from a corresponding gas source 321 through a corresponding flow controller 322 to the showerhead 313. Each flow controller 322 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 320 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0031] The power source 330 includes an RF power source 331 coupled to the plasma processing chamber 310 via at least one impedance matching circuit. The RF power source 331 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 310s. Therefore, the RF power source 331 can function as at least a part of a plasma generating unit configured to generate a plasma from one or more processing gases in the plasma processing chamber 310s. In addition, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0032] In one embodiment, the RF power supply 331 includes a first RF generating unit 331a and a second RF generating unit 331b. The first RF generating unit 331a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 331a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0033] The second RF generating unit 331b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 331b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0034] The power supply 330 may also include a DC power supply 332 coupled to the plasma processing chamber 310. The DC power supply 332 includes a first DC generator 332a and a second DC generator 332b. In one embodiment, the first DC generator 332a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first bias DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 332b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0035] In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 332a and at least one lower electrode. Thus, the first DC generator 332a and the waveform generator constitute a voltage pulse generator. When the second DC generator 332b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. The first DC generating unit 332a and the second DC generating unit 332b may be provided in addition to the RF power supply 331, or the first DC generating unit 332a may be provided instead of the second RF generating unit 331b.

[0036] The exhaust system 340 may be connected to, for example, a gas outlet 310e provided at the bottom of the plasma processing chamber 310. The exhaust system 340 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 310s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0037] [Transportation procedure for substrate W] An example of a procedure for transporting the substrate W in the substrate processing system 10 will be described below with reference to FIGS.

[0038] First, the FOUP 61 containing the substrate W is placed in the LP 60, and the gate valve 51 is opened. Then, the placement unit 520 of the transfer robot 52 is inserted into the FOUP 61, and the substrate W is placed on the placement unit 520. Then, as shown in Fig. 9, for example, the substrate W is carried out of the FOUP 61.

[0039] 10, for example, the arm part 521 is extended so that the height of the substrate W placed on the placement part 520 is at the position of the gate valve 42. Then, the gate valve 42 is opened while the inside of the LLM 40 is in an atmospheric pressure state. Then, for example, as shown in FIG. 10, the placement part 520 on which the substrate W is placed is inserted into the LLM 40, and the substrate W is transferred from the placement part 520 of the transfer robot 52 to the placement part 410 of the transfer robot 41.

[0040] When the substrate W is transferred, the placement unit 410 of the transport robot 41 and the placement unit 520 of the transport robot 52 are in a positional relationship as shown in Fig. 11, for example. Fig. 11 is a diagram showing an example of the process of transferring the substrate W. This allows the placement unit 410 of the transport robot 41 and the placement unit 520 of the transport robot 52 to transfer the substrate W without interfering with each other.

[0041] Next, as shown in FIG. 12 , for example, the placement unit 520 of the transfer robot 52 is retracted from within the LLM 40, and the gate valve 42 is closed. Then, the pressure inside the LLM 40 is reduced from atmospheric pressure to a vacuum atmosphere. Then, the placement unit 410 on which the substrate W is placed is moved above the gate valve 43, and the gate valve 43 is opened. Then, as shown in FIG. 12 , for example, the transfer robot 22 arranged below the gate valve 43 is extended, and the placement unit 220 of the transfer robot 22 is inserted into the LLM 40. Then, the placement unit 220 of the transfer robot 22 lifts the substrate W placed on the placement unit 410 of the transfer robot 41, and the placement unit 410 of the transfer robot 41 is retracted from above the gate valve 43. As a result, the substrate W is transferred from the placement unit 410 of the transfer robot 41 to the placement unit 220 of the transfer robot 22.

[0042] In this embodiment, the transfer robot 22 has a mounting unit 220 on which the substrate W is placed and an arm unit 221 that moves the mounting unit 220 in the vertical direction. The arm unit 221 has a cylindrical body 221a and a cylindrical body 221b. The cylindrical body 221a is disposed within the VTM 20 so that its axis is vertical. The cylindrical body 221b is accommodated within the cylindrical body 221a and is disposed within the VTM 20 so that it is coaxial with the cylindrical body 221a. The arm unit 221 extends and contracts in the vertical direction along the axis of the cylindrical body 221a by sliding the cylindrical body 221b relative to the cylindrical body 221a, thereby moving the mounting unit 220 in the vertical direction. This reduces the installation area of ​​the transfer robot 22. The cylindrical body 221a is an example of a first cylindrical body, and the cylindrical body 221b is an example of a second cylindrical body.

[0043] When the substrate W is transferred, the placement unit 410 of the transport robot 41 and the placement unit 220 of the transport robot 22 are in a positional relationship as shown in FIG. 13, for example. FIG. 13 is a diagram showing an example of the process of transferring the substrate W. This allows the placement unit 410 of the transport robot 41 and the placement unit 220 of the transport robot 22 to transfer the substrate W without interfering with each other. When the substrate W is transferred from the placement unit 410 of the transport robot 41 to the placement unit 220 of the transport robot 22, the cylindrical body 221a of the arm unit 221 passes between the placement units 230 of the transport robot 23, as shown in FIG. 14, for example. Therefore, the cylindrical body 221a of the arm unit 221 does not interfere with the placement unit 230 of the transport robot 23.

[0044] Next, the arm part 221 of the transfer robot 22 retracts, and the substrate W is transferred from the placement part 220 of the transfer robot 22 to the placement part 230 of the transfer robot 23, as shown in Fig. 15, for example. At this time, the positional relationship between the placement part 220 of the transfer robot 22 and the placement part 230 of the transfer robot 23 becomes, for example, as shown in Fig. 16. This allows the placement part 220 of the transfer robot 22 and the placement part 230 of the transfer robot 23 to transfer the substrate W without interfering with each other. Then, the gate valve 31 of the PM 30 is opened, and the placement part 230 on which the substrate W is placed is inserted into the PM 30, as shown in Fig. 17, for example.

[0045] When the substrate W is to be unloaded from the PM 30, the substrate W in the PM 30 is placed on the mounting part 230 of the transfer robot 23 and unloaded from the PM 30. The substrate W is then transferred from the mounting part 230 of the transfer robot 23 to the mounting part 220 of the transfer robot 22, and the gate valve 43 is opened. The arm part 221 of the transfer robot 22 then extends, and the mounting part 220 on which the substrate W is placed is inserted into the LLM 40. The mounting part 410 of the transfer robot 41 is then inserted below the mounting part 220 of the transfer robot 22. The arm part 221 of the transfer robot 22 then contracts, and the substrate W is then transferred from the mounting part 220 of the transfer robot 22 to the mounting part 410 of the transfer robot 41. The gate valve 43 is then closed, and the pressure in the LLM 40 is increased from a vacuum atmosphere to atmospheric pressure. Then, the gate valve 42 is opened, the placement part 520 of the transfer robot 52 is inserted into the LLM 40, and the substrate W is transferred from the placement part 410 of the transfer robot 41 to the placement part 520 of the transfer robot 52. Then, the arm part 521 of the transfer robot 52 is contracted, and the placement part 520 on which the substrate W is placed is inserted into the FOUP 61, and the substrate W is accommodated in the FOUP 61.

[0046] When a substrate W is carried into another PM 30, the substrate W carried out from the LLM 40 by the transport robot 22 is delivered to the mounting part 210 of the transport robot 21, as shown in Fig. 18, for example. At this time, the positional relationship between the mounting part 220 of the transport robot 22 and the mounting part 210 of the transport robot 21 is as shown in Fig. 19, for example. This allows the mounting part 220 of the transport robot 22 and the mounting part 210 of the transport robot 21 to deliver the substrate W without interfering with each other.

[0047] Next, the transfer robot 21 moves the substrate W above the transfer robot 22 arranged near the other PM 30. Then, as shown in Fig. 20 for example, the arm portion 221 of the transfer robot 22 arranged near the other PM 30 is extended, and the substrate W is lifted from the platform 210 of the transfer robot 21 by the arm portion 220 of the transfer robot 22. As a result, the substrate W is transferred from the platform 210 of the transfer robot 21 to the platform 220 of the transfer robot 22. Then, the platform 210 of the transfer robot 21 retracts from below the platform 220 of the transfer robot 22.

[0048] Next, the arm portion 221 of the transport robot 22 retracts, and the substrate W is transferred from the placement portion 220 of the transport robot 22 to the placement portion 230 of the transport robot 23, as shown in Fig. 21 for example. Then, the gate valve 31 of the PM 30 is opened, and the placement portion 230 on which the substrate W is placed is inserted into the PM 30, and the substrate W is carried into the PM 30, as shown in Fig. 22 for example.

[0049] One embodiment has been described above. As described above, the substrate processing system 10 in this embodiment includes one or more PMs 30 and a VTM 20. At least one PM 30 and the VTM 20 are arranged such that at least a portion of the PM 30 overlaps with at least a portion of the VTM 20 in a top view. This allows the installation area of ​​the substrate processing system 10 to be reduced.

[0050] Here, the economic value provided by the substrate processing system 10 can be evaluated using an index called Wafer Price Per Space (WPPS), for example. The WPPS is calculated by the following formula (1), for example. WPPS = (WPD × utilization rate × yield) / installation area × equipment price (1) In the above formula (1), WPD (Wafer Per day) represents the number of substrates W that can be processed in a day.

[0051] In this embodiment, the "installation area" included in the above formula (1) can be reduced, so that the value of WPPS can be increased, and the economic value of the substrate processing system 10 can be improved.

[0052] In the above-described embodiment, the VTM 20 is disposed above at least one PM 30. This allows the substrate processing system 10 to be easily configured.

[0053] In the above-described embodiment, the substrate processing system 10 further includes an LLM 40 connected to the VTM 20. At least one PM 30 and the LLM 40 are arranged such that at least a portion of the PM 30 overlaps with at least a portion of the LLM 40 in a top view. This allows the installation area of ​​the substrate processing system 10 to be reduced.

[0054] In the above-described embodiment, at least a portion of the VTM 20 is disposed between at least one PM 30 and the LLM 40. Furthermore, the at least one PM 30, the VTM 20, and the LLM 40 are disposed such that at least a portion of the PM 30, at least a portion of the VTM 20, and at least a portion of the LLM 40 overlap with each other in a top view. This allows the installation area of ​​the substrate processing system 10 to be reduced.

[0055] In the above embodiment, the LLM 40 is disposed above the VTM 20. This allows the substrate processing system 10 to be easily configured.

[0056] Furthermore, in the above-described embodiment, the substrate processing system 10 includes a transfer robot 22 that is provided within the VTM 20 and transfers the substrate W between the VTM 20 and the PM 30. The transfer robot 22 has a mounting unit 220 on which the substrate W is placed and an arm unit 221 that moves the mounting unit 220 in the vertical direction. The arm unit 221 includes a cylindrical body 221a arranged with its axis aligned in the vertical direction, and a cylindrical body 221b that can be housed within the cylindrical body 221a and arranged coaxially with the cylindrical body 221a. The arm unit 221 extends and retracts along the axis of the cylindrical body 221a by sliding the cylindrical body 221b relative to the cylindrical body 221a, thereby moving the mounting unit 220 in the vertical direction. This allows the installation area of ​​the transfer robot 22 to be reduced.

[0057] [others] The technology disclosed in this application is not limited to the above-described embodiment, and various modifications are possible within the scope of the gist thereof.

[0058] For example, in the above-described embodiment, the LLM 40 is disposed above the VTM 20, but the disclosed technology is not limited to this. In another embodiment, the LLM 40 may be disposed next to the VTM 20. Even in this case, at least one PM 30 and the VTM 20 are disposed such that at least a portion of the PM 30 overlaps with at least a portion of the VTM 20 in a top view. This allows the installation area of ​​the substrate processing system 10 to be reduced compared to when the VTM 20, PM 30, LLM 40, and EFEM 50 are all disposed side by side.

[0059] Furthermore, even when the LLM 40 is disposed next to the VTM 20, it is preferable that the LLM 40 be disposed so that at least a portion of the PM 30 overlaps with at least a portion of the LLM 40, as shown in Fig. 23. Fig. 23 is a schematic cross-sectional view showing another example of the substrate processing system 10. Arranging the VTM 20, PM 30, and LLM 40 in this manner also makes it possible to reduce the installation area of ​​the substrate processing system 10.

[0060] Furthermore, in the above-described embodiment, a portion of the VTM 20 is disposed above the PM 30, and the LLM 40 is disposed above the VTM 20; however, the disclosed technology is not limited to this. As another example, as shown in FIG. 24, the VTM 20 may be disposed above the LLM 40, and the PM 30 may be disposed above a portion of the VTM 20. FIG. 24 is a schematic cross-sectional view showing another example of a substrate processing system 10. In the example of FIG. 24, the arm 221 of the transfer robot 22 in the VTM 20 moves the placement unit 220 by extending and retracting in the vertical direction from above the VTM 20. Even in a substrate processing system 10 of this type, the installation area of ​​the substrate processing system 10 can be reduced.

[0061] Although the above-described embodiment illustrates the multiple PMs 30 arranged side by side, the disclosed technology is not limited to this. In another embodiment, the multiple PMs 30 may be arranged vertically, as shown in FIG. 25 . FIG. 25 is a schematic cross-sectional view illustrating another example of the substrate processing system 10. In the example of FIG. 25 , the multiple PMs 30 are arranged two above and two below. In the example of FIG. 25 , the arm 231 of the transfer robot 23 is extendable in the vertical direction, allowing the substrate W to be loaded and unloaded into the upper PM 30 and the lower PM 30. This allows the installation area of ​​the substrate processing system 10 to be reduced even in a substrate processing system 10 including a large number of PMs 30. Although the example of FIG. 25 illustrates two PMs 30 arranged vertically, the number of PMs 30 arranged vertically may be more than two.

[0062] In the above-described embodiment, the EFEM 50 is disposed to the side of the VTM 20. However, the disclosed technology is not limited to this. Alternatively, the EFEM 50 may be disposed such that at least a portion of the EFEM 50 overlaps with at least a portion of the VTM 20 in a top view. Furthermore, at least one LP 60 may be disposed such that at least a portion of the LP 60 overlaps with at least a portion of the LLM 40 in a top view. FIG. 26 is a schematic cross-sectional view illustrating another example of the substrate processing system 10. In the example of FIG. 26, the EFEM 50 is disposed above the VTM 20, and multiple LPs 60 are disposed above the LLM 40. In the example of FIG. 26, the arm 521 of the transfer robot 52 in the EFEM 50 extends and retracts vertically from above the EFEM 50, thereby moving the placement unit 520 in the vertical direction. Even in this type of substrate processing system 10, the installation area of ​​the substrate processing system 10 can be reduced.

[0063] 26 illustrates a substrate processing system 10 in which multiple LLMs 40 are disposed beside the EFEM 50, but the disclosed technology is not limited thereto. In yet another embodiment, the LLM 40 may be disposed below the EFEM 50, as shown in FIG. 27 . FIG. 27 is a schematic cross-sectional view illustrating another example of the substrate processing system 10. In the example of FIG. 27 , a substrate W transferred to a transfer robot 41 in the LLM 40 is transferred to the mounting portion 220 of the transfer robot 22 via a gate valve 43. Therefore, in the example of FIG. 27 , no transfer robot 21 is provided in the VTM 20. Although two transfer robots 41 are provided in the LLM 40 in the example of FIG. 27 , the number of transfer robots 41 provided in the LLM 40 may be one.

[0064] 26 illustrates a substrate processing system 10 in which a plurality of PMs 30 are arranged side by side, but the disclosed technology is not limited to this. In yet another embodiment, a plurality of PMs 30 may be arranged vertically, as shown in FIG. 28. FIG. 28 is a schematic cross-sectional view illustrating another example of the substrate processing system 10. In the example of FIG. 28, two PMs 30 are arranged vertically, but the number of PMs 30 arranged vertically may be more than two. This allows the installation area of ​​the substrate processing system 10 to be reduced even in a substrate processing system 10 including a large number of PMs 30.

[0065] In the above embodiment, the PM30 is described as using a capacitively coupled plasma (CCP) as an example of a plasma source, but the plasma source is not limited to this. Examples of plasma sources other than the capacitively coupled plasma include an inductively coupled plasma (ICP), a microwave-excited surface wave plasma (SWP), an electron cyclotron resonance plasma (ECP), and a helicon wave-excited plasma (HWP).

[0066] Furthermore, although the PM 30 in the above-described embodiment processes the substrate W using plasma, the disclosed technology is not limited to this. The PM 30 may be an apparatus that performs a process on the substrate W without using plasma, such as heat treatment or CVD (Chemical Vapor Deposition).

[0067] It should be noted that the disclosed embodiments are illustrative in all respects and should not be considered limiting. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0068] W substrate 10. Substrate Processing System 12 Control device 12a Computer 12a1 Processing section 12a2 Storage section 12a3 communication interface 20 VTM 21 Transport robot 210 Placement section 22 Transport robot 220 Placement section 221 Arm 221a Cylindrical body 221b Cylinder 23 Transport robot 230 Placement section 231 Arm 30 PM 31 Gate valve 32 Opening 310 Plasma Processing Chamber 310a side wall 310e Gas outlet 310s Plasma Processing Space 311 Substrate support 3111 Main body 31110 Base 31111 Electrostatic Chuck 3112 Ring Assembly 313 shower head 320 Gas Supply Unit 321 Gas Source 322 Flow Controller 330 Power supply 331 RF power supply 332 DC power supply 340 Exhaust System 40 LLM 41 Transport robot 410 Placement section 42 Gate valve 43 Gate Valve 50 EFEM 51 Gate valve 52 Transport robot 520 Placement section 521 Arm 521a cylinder 521b cylinder 60 LP 61 FOUP

Claims

1. a plurality of process modules for processing substrates; a vacuum transfer module capable of transferring the substrate into the process module; Equipped with At least one of the process module and the vacuum transfer module comprises: the process module and the vacuum transfer module are arranged so as to overlap each other in a top view, A substrate processing system in which the plurality of process modules are stacked in a vertical direction.

2. a plurality of process modules for processing substrates; a vacuum transfer module capable of transferring the substrate into the process module; a transfer robot provided in the vacuum transfer module for transferring the substrate between the vacuum transfer module and the process module; Equipped with At least one of the process module and the vacuum transfer module comprises: the process module and the vacuum transfer module are arranged so as to overlap each other in a top view, The transport robot is a placement section on which the substrate is placed; an arm portion that moves the placement portion in a vertical direction; and The arm portion a first cylindrical body arranged with its axis in a vertical direction; a second cylindrical body that can be accommodated in the first cylindrical body and is arranged coaxially with the first cylindrical body; Including, The arm portion A substrate processing system in which the second cylindrical body is slid relative to the first cylindrical body to extend and retract along the axis of the first cylindrical body, thereby moving the placement section in a vertical direction.

3. 3. The substrate processing system according to claim 1, wherein the vacuum transfer module is disposed above or below at least one of the process modules.

4. The substrate processing system of claim 1 , further comprising a load lock module connected to the vacuum transfer module.

5. one or more process modules for processing substrates; a vacuum transfer module capable of transferring the substrate into the process module; a load lock module connected to the vacuum transfer module; Equipped with At least one of the process module and the vacuum transfer module comprises: the process module and the vacuum transfer module are arranged so as to overlap each other in a top view, the vacuum transfer module is disposed above or below at least one of the process modules; At least one of the process module and the load lock module includes: A substrate processing system in which the process module and the load lock module are arranged so as to overlap each other at least partially in a top view.

6. one or more process modules for processing substrates; a vacuum transfer module capable of transferring the substrate into the process module; a load lock module connected to the vacuum transfer module; Equipped with At least one of the process module and the vacuum transfer module comprises: the process module and the vacuum transfer module are arranged so as to overlap each other in a top view, the vacuum transfer module is disposed above or below at least one of the process modules; At least a portion of the vacuum transfer module comprises: disposed between at least one of the process modules and the load lock module; At least one of the process module, the vacuum transfer module, and the load lock module comprises: a substrate processing system in which at least a portion of the process module, at least a portion of the vacuum transfer module, and at least a portion of the load lock module are arranged to overlap each other in a top view;

7. The substrate processing system according to claim 4 , wherein the load lock module is disposed above or below the vacuum transfer module.

8. The substrate processing system according to claim 4 , further comprising an atmospheric transfer module connected to the load lock module.

9. one or more process modules for processing substrates; a vacuum transfer module capable of transferring the substrate into the process module; a load lock module connected to the vacuum transfer module; an atmospheric transfer module connected to the load lock module; Equipped with At least one of the process module and the vacuum transfer module comprises: the process module and the vacuum transfer module are arranged so as to overlap each other in a top view, the vacuum transfer module is disposed above or below at least one of the process modules; The atmospheric transfer module includes: a substrate processing system in which the atmospheric transfer module and the vacuum transfer module are arranged so as to overlap at least partially when viewed from above;

10. one or more process modules for processing substrates; a vacuum transfer module capable of transferring the substrate into the process module; a load lock module connected to the vacuum transfer module; an atmospheric transfer module connected to the load lock module; Equipped with At least one of the process module and the vacuum transfer module comprises: the process module and the vacuum transfer module are arranged so as to overlap each other in a top view, the vacuum transfer module is disposed above or below at least one of the process modules; The substrate processing system, wherein the atmospheric transfer module is located above or below the vacuum transfer module.

11. The substrate processing system according to claim 8 , further comprising one or more load ports connected to the atmospheric transfer module.

12. one or more process modules for processing substrates; a vacuum transfer module capable of transferring the substrate into the process module; a load lock module connected to the vacuum transfer module; an atmospheric transfer module connected to the load lock module; one or more load ports connected to the atmospheric transfer module; Equipped with At least one of the process module and the vacuum transfer module comprises: the process module and the vacuum transfer module are arranged so as to overlap each other in a top view, the vacuum transfer module is disposed above or below at least one of the process modules; At least one of the load ports comprises: A substrate processing system in which the load port and the load lock module are arranged so as to overlap at least partially when viewed from above.

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