Semiconductor device

Abstract

To provide a semiconductor device enabling high integration while suppressing deterioration of heat dissipation characteristics.SOLUTION: A semiconductor device A2 includes a substrate 3, a conductive portion 5, a plurality of semiconductor chips 4A to 4F, control chips 4H, 4G, a plurality of first leads 1A to 1G, a plurality of second leads 2A to 2H and 2S to 2U, and a sealing resin 7. The sealing resin 7 has a first side surface 76 where multiple first leads 1A to 1G are exposed, a second side surface 75 different from the first side surface 76 where multiple second leads 2A to 2H and 2S to 2U are exposed, and multiple recesses 731, 732, 733 formed on the second side surface 75, positioned between some second leads of the second leads 2A to 2H and 2S to 2U.SELECTED DRAWING: Figure 36

Description

[Technical Field]

[0001] The present disclosure relates to semiconductor devices. [Background technology]

[0002] BACKGROUND ART A semiconductor device is known that includes a semiconductor chip, a control chip through which a control current flows that controls the operating current of the semiconductor chip, and a resin that seals the semiconductor chip and the control chip (see Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2015-220429 Summary of the Invention [Problem to be solved by the invention]

[0004] The control chip has input and output of multiple types of control signals. As the number of control signals increases, the number of conductive paths to the control chip must also increase. However, if these conductive paths are constructed using multiple metal leads as in the past, it may become difficult to achieve a higher degree of integration of semiconductor devices.

[0005] The present disclosure has been made in light of the above circumstances, and an object of the present disclosure is to provide a semiconductor device that enables higher integration. [Means for solving the problem]

[0006] The semiconductor device provided by the present disclosure comprises a substrate, a conductive portion made of a conductive material formed on the substrate, a first lead arranged on the substrate and having a higher heat dissipation property than the substrate, a semiconductor chip arranged on the first lead, a control chip electrically connected to the conductive portion and the semiconductor chip and arranged on the substrate spaced apart from the semiconductor chip and the first lead in a planar view for controlling the operation of the semiconductor chip, and a resin covering the semiconductor chip, the control chip, at least a portion of the substrate, and a portion of the lead. [Effects of the Invention]

[0007] According to the present disclosure, it is possible to provide a semiconductor device that achieves high integration while suppressing deterioration in heat dissipation characteristics.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. [Figure 2] 1 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. [Figure 3] FIG. 2 is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 4] 1 is a plan view showing a main part of a semiconductor device according to a first embodiment of the present disclosure. [Figure 5] FIG. 5 is a cross-sectional view taken along line VV in FIG. [Figure 6] 1 is an enlarged cross-sectional view showing a main part of a semiconductor device according to a first embodiment of the present disclosure. [Figure 7] 1 is an enlarged cross-sectional view showing a main part of a semiconductor device according to a first embodiment of the present disclosure. [Figure 8] 1 is an enlarged cross-sectional view showing a main part of a semiconductor device according to a first embodiment of the present disclosure. [Figure 9] FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. [Figure 10] 1 is an enlarged plan view showing a main part of a semiconductor device according to a first embodiment of the present disclosure. [Figure 11] 10 is an enlarged plan view of a main portion showing an end portion of a first wire 91A. FIG. [Figure 12] FIG. 12 is an enlarged cross-sectional view of a main part taken along line XII-XII in FIG. [Figure 13] 13 is an enlarged cross-sectional view of a main part taken along line XIII-XIII in FIG. 11. [Figure 14] 1 is an enlarged plan view showing a main part of a semiconductor device according to a first embodiment of the present disclosure. [Figure 15] 1 is an enlarged plan view showing a main part of a semiconductor device according to a first embodiment of the present disclosure. [Figure 16] 2 is an enlarged plan view showing a main part of a substrate of the semiconductor device according to the first embodiment of the present disclosure. FIG. [Figure 17] 1 is an enlarged cross-sectional view showing a main part of a semiconductor chip of a semiconductor device according to a first embodiment of the present disclosure. [Figure 18] 1 is a circuit diagram schematically illustrating an electrical configuration of a semiconductor device according to a first embodiment of the present disclosure. [Figure 19] 1 is a circuit diagram showing a part of a circuit configuration of a semiconductor device according to a first embodiment of the present disclosure. [Figure 20] 4 is a flowchart illustrating an example of a method for manufacturing a semiconductor device according to the first embodiment of the present disclosure. [Figure 21] 2A to 2C are plan views illustrating an example of a method for manufacturing a semiconductor device according to a first embodiment of the present disclosure. [Figure 22] FIG. 22 is a plan view showing the next step in FIG. 21. [Figure 23] FIG. 23 is a plan view showing the next step in FIG. 22. [Figure 24] FIG. 24 is a plan view showing the next step of FIG. 23. [Figure 25] FIG. 25 is a plan view showing the next step of FIG. 24. [Figure 26] FIG. 26 is a plan view showing the next step in FIG. 25. [Figure 27] FIG. 27 is a plan view showing the next step of FIG. 26. [Figure 28]FIG. 28 is a plan view showing the next step of FIG. 27. [Figure 29] FIG. 29 is a plan view showing the next step of FIG. 28. [Figure 30] FIG. 30 is a plan view showing the next step in FIG. 29. [Figure 31] FIG. 2 is a plan view of a main part showing a first modified example of the semiconductor device according to the first embodiment of the present disclosure. [Figure 32] 1 is an enlarged cross-sectional view of a main part showing a semiconductor chip of a first modified example of the semiconductor device according to the first embodiment of the present disclosure. [Figure 33] FIG. 2 is an enlarged perspective view of a main part showing a diode of a first modified example of the semiconductor device according to the first embodiment of the present disclosure. [Figure 34] 10 is an enlarged cross-sectional view of a main part showing a diode of a first modified example of the semiconductor device according to the first embodiment of the present disclosure. FIG. [Figure 35] FIG. 10 is a perspective view showing a semiconductor device according to a second embodiment of the present disclosure. [Figure 36] FIG. 4 is a plan view showing a semiconductor device according to a second embodiment of the present disclosure. [Figure 37] FIG. 10 is a bottom view showing a semiconductor device according to a second embodiment of the present disclosure. [Figure 38] FIG. 4 is a side view showing a semiconductor device according to a second embodiment of the present disclosure. [Figure 39] FIG. 10 is a plan view of a main part of a semiconductor device according to a second embodiment of the present disclosure. [Figure 40] FIG. 40 is a cross-sectional view taken along the line XL-XL in FIG. 39. [Figure 41] FIG. 40 is a cross-sectional view taken along line XLI-XLI in FIG. 39. [Figure 42] FIG. 10 is a plan view of a main part of a semiconductor device according to a second embodiment of the present disclosure. [Figure 43] FIG. 10 is a plan view of a main part of a semiconductor device according to a second embodiment of the present disclosure. [Figure 44] FIG. 4 is a circuit diagram schematically illustrating the electrical configuration of a semiconductor device according to a second embodiment of the present disclosure. [Figure 45] FIG. 10 is a plan view of a main part of a semiconductor device according to a second embodiment of the present disclosure. [Figure 46]FIG. 10 is an enlarged plan view showing a main part of a semiconductor device according to a second embodiment of the present disclosure. [Figure 47] FIG. 10 is an enlarged plan view showing a main part of a semiconductor device according to a second embodiment of the present disclosure. [Figure 48] FIG. 10 is an enlarged plan view of a main part showing a substrate of a semiconductor device according to a second embodiment of the present disclosure. [Figure 49] FIG. 4 is a circuit diagram schematically illustrating the electrical configuration of a semiconductor device according to a second embodiment of the present disclosure. [Figure 50] FIG. 10 is a circuit diagram schematically illustrating the electrical configuration of a circuit board on which a semiconductor device according to a second embodiment of the present disclosure is mounted. [Figure 51] FIG. 10 is a perspective view schematically showing a first transmission circuit chip, a primary-side circuit chip, and a control chip of a semiconductor device according to a second embodiment of the present disclosure. [Figure 52] FIG. 2 is a plan view of a main part showing a first transmission circuit chip. [Figure 53] FIG. 2 is a bottom view of a main portion showing the first transmission circuit chip. [Figure 54] FIG. 2 is a plan view of a main part showing a first transmission circuit chip. [Figure 55] FIG. 53 is a cross-sectional view taken along the line LV-LV in FIG. 52. [Figure 56] FIG. 2 is an enlarged cross-sectional view of a main part showing a first transmission circuit chip. [Figure 57] FIG. 10 is a diagram showing the relationship between the thickness of the interlayer film and the breakdown voltage in the first transmission circuit chip. [Figure 58] FIG. 10 is a plan view showing a semiconductor device according to a third embodiment of the present disclosure. [Figure 59] FIG. 10 is an enlarged plan view of a main part showing a semiconductor device according to a third embodiment of the present disclosure. [Figure 60] FIG. 10 is a plan view showing a first modified example of the semiconductor device according to the third embodiment of the present disclosure. [Figure 61] FIG. 10 is a plan view showing a semiconductor device according to a fourth embodiment of the present disclosure. [Figure 62] FIG. 10 is an enlarged plan view of a main part showing a semiconductor device according to a fourth embodiment of the present disclosure. [Figure 63]FIG. 10 is a plan view showing a signal transmission element of a semiconductor device according to a fourth embodiment of the present disclosure. [Figure 64] FIG. 10 is an enlarged plan view of a main part showing a first modified example of the semiconductor device according to the fourth embodiment of the present disclosure. [Figure 65] FIG. 10 is an enlarged plan view of a main part showing a second modified example of the semiconductor device according to the fourth embodiment of the present disclosure. [Figure 66] FIG. 10 is a plan view showing a semiconductor device according to a fifth embodiment of the present disclosure. [Figure 67] FIG. 10 is an enlarged plan view of a main part showing a semiconductor device according to a fifth embodiment of the present disclosure. [Figure 68] FIG. 10 is a plan view showing a semiconductor device according to a sixth embodiment of the present disclosure. [Figure 69] FIG. 10 is an enlarged plan view showing a main part of a semiconductor device according to a sixth embodiment of the present disclosure. [Figure 70] FIG. 13 is a plan view showing a semiconductor device according to a seventh embodiment of the present disclosure. [Figure 71] FIG. 13 is an enlarged plan view of a main part showing a semiconductor device according to a seventh embodiment of the present disclosure. [Figure 72] FIG. 13 is an enlarged plan view of a main part showing a semiconductor device according to a seventh embodiment of the present disclosure. [Figure 73] FIG. 13 is a circuit diagram schematically illustrating the electrical configuration of a semiconductor device according to a seventh embodiment of the present disclosure. [Figure 74] FIG. 13 is a plan view showing a first modified example of the semiconductor device according to the seventh embodiment of the present disclosure. [Figure 75] FIG. 13 is a plan view showing a second modified example of the semiconductor device according to the seventh embodiment of the present disclosure. [Figure 76] FIG. 13 is a plan view of a semiconductor package according to an eighth embodiment. [Figure 77] FIG. 13 is a side view of a semiconductor package according to an eighth embodiment. [Figure 78] FIG. 77 is a bottom view of the semiconductor package of FIG. 76. [Figure 79] FIG. 20 is a plan view showing the internal configuration of the semiconductor package of FIG. [Figure 80] FIG. 80 is an enlarged view of the control wiring area of ​​FIG. 79. [Figure 81] FIG. 81 is an enlarged view of the control circuit chip and its surroundings in FIG. 80. [Figure 82] FIG. 81 is an enlarged view of another control circuit chip and its surroundings in FIG. 80. [Figure 83] FIG. 1 is a schematic cross-sectional view of a semiconductor package. [Figure 84] FIG. 13 is a plan view showing the internal configuration of a semiconductor package according to a modification of the semiconductor package of the eighth embodiment. [Figure 85] FIG. 85 is an enlarged view of the control wiring area of ​​FIG. 84. [Figure 86] FIG. 34 is an enlarged view of a control wiring region of a semiconductor package according to a modification of the semiconductor package of FIG. 33. [Figure 87] FIG. 13 is a plan view showing the internal configuration of a semiconductor package according to a ninth embodiment. [Figure 88] FIG. 88 is an enlarged view of the control wiring area of ​​FIG. 87. [Figure 89] FIG. 23 is a plan view showing the internal configuration of a semiconductor package according to a tenth embodiment. [Figure 90] FIG. 89 is an enlarged view of the control wiring area of ​​FIG. [Figure 91] FIG. 91 is an enlarged view of the control circuit chip and its surroundings in FIG. 90. [Figure 92] FIG. 91 is an enlarged view of the control circuit chip and its surroundings in FIG. 90. [Figure 93] FIG. 23 is a plan view showing the internal configuration of a semiconductor package according to an eleventh embodiment. [Figure 94] FIG. 94 is an enlarged view of the control wiring area of ​​FIG. 93. [Figure 95] FIG. 23 is a plan view showing the internal configuration of a semiconductor package according to a modified example of the eleventh embodiment. [Figure 96] FIG. 96 is an enlarged view of the control wiring area of ​​FIG. 95. [Figure 97] FIG. 23 is a plan view showing the internal configuration of a semiconductor package according to a twelfth embodiment. [Figure 98] FIG. 98 is an enlarged view of the control wiring area of ​​FIG. 97. [Figure 99] FIG. 98 is an enlarged view of the control circuit chip and its surroundings in FIG. 97. [Figure 100] FIG. 98 is an enlarged view of another control circuit chip and its surroundings in FIG. 97. [Figure 101] FIG. 23 is a plan view showing the internal configuration of a semiconductor package according to a thirteenth embodiment. [Figure 102] FIG. 102 is an enlarged view of the control wiring area of ​​FIG. [Figure 103] FIG. 102 is an enlarged view of the control circuit chip and its surroundings in FIG. [Figure 104] 102 is an enlarged view of another control circuit chip and its surroundings in FIG. 101. [Figure 105] FIG. 10 is a plan view showing a part of the internal configuration of a semiconductor package according to a modified example. [Figure 106] FIG. 10 is an enlarged view of a relay chip and its surroundings in a semiconductor package according to a modified example. [Figure 107] FIG. 10 is an enlarged view of a control circuit chip and its surroundings in the internal configuration of a semiconductor package according to a modified example. [Figure 108] FIG. 10 is an enlarged view of a control circuit chip, a signal transmission chip, and their surroundings in the internal configuration of a semiconductor package according to a modified example. [Figure 109] FIG. 10 is a plan view showing an example of relay wiring of a semiconductor package according to a modified example. [Figure 110] FIG. 10 is a plan view showing another example of relay wiring of the semiconductor package according to the modified example. [Figure 111] FIG. 10 is a plan view showing still another example of relay wiring of the semiconductor package according to the modified example. [Figure 112] FIG. 10 is a plan view showing a part of the internal configuration of a semiconductor package according to a modified example. DETAILED DESCRIPTION OF THE INVENTION

[0010] Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0011] Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not necessarily intended to assign any ordering to their objects.

[0012] First Embodiment 1 to 19 show a semiconductor device according to a first embodiment of the present disclosure. The semiconductor device A1 of this embodiment includes a plurality of leads 1, a plurality of leads 2, a substrate 3, a plurality of semiconductor chips 4, a plurality of control chips 4, a plurality of diodes 49, a conductive portion 5, a plurality of joints 6, a plurality of first wires 91, a plurality of second wires 92, and a sealing resin 7. The semiconductor device A1 can be used, for example, in a drive circuit that drives a compressor in an outdoor unit of an air conditioner, a drive circuit that drives a compressor in a refrigerator, a drive circuit that drives a fan, etc. The drive circuit drives, for example, a three-phase AC motor.

[0013] FIG. 1 is a perspective view showing the semiconductor device A1. FIG. 2 is a plan view showing the semiconductor device A1. FIG. 3 is a bottom view showing the semiconductor device A1. FIG. 4 is a plan view of a main part of the semiconductor device A1. FIG. 5 is a cross-sectional view taken along line VV in FIG. 4. FIG. 6 is an enlarged cross-sectional view of a main part of the semiconductor device A1. FIG. 7 is an enlarged cross-sectional view of a main part of the semiconductor device A1. FIG. 8 is an enlarged cross-sectional view of a main part of the semiconductor device A1. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 4. FIG. 10 is an enlarged plan view of a main part of the semiconductor device A1. FIG. 14 is an enlarged plan view of a main part of the semiconductor device A1. FIG. 15 is an enlarged plan view of a main part of the semiconductor device A1. FIG. 16 is an enlarged plan view of a main part of the substrate of the semiconductor device A1. FIG. 17 is an enlarged cross-sectional view of a main part of the semiconductor chip of the semiconductor device A1. FIG. 18 is a circuit diagram schematically showing the electrical configuration of the semiconductor device A1. FIG. 19 is a circuit diagram showing a part of the circuit configuration of the semiconductor device A1.

[0014] In these figures, the z direction corresponds to the thickness direction of the substrate 3. The x direction is perpendicular to the z direction and is the first direction of the present disclosure. The y direction is perpendicular to the z direction and the x direction.

[0015] <Board 3> The material of the substrate 3 is not particularly limited. For example, a material having a higher thermal conductivity than the material of the resin 7 is preferable as the material of the substrate 3. For example, alumina (Al2 O3) Ceramics such as silicon nitride (SiN), aluminum nitride (AlN), and alumina containing zirconia The thickness of the substrate 3 is not particularly limited, and is, for example, about 0.1 mm to 1.0 mm.

[0016] The shape of the substrate 3 is not particularly limited. As shown in FIGS. 4 to 9 , in this embodiment, the substrate 3 has a first surface 31, a second surface 32, a third surface 33, a fourth surface 34, a fifth surface 35, and a sixth surface 36. The first surface 31 faces the z direction. The second surface 32 faces the opposite side of the first surface 31 in the z direction. The third surface 33 is located between the first surface 31 and the second surface 32 in the z direction, and in the illustrated example, is connected to the first surface 31 and the second surface 32. The third surface 33 faces the x direction. The fourth surface 34 is located between the first surface 31 and the second surface 32 in the z direction, and in the illustrated example, is connected to the first surface 31 and the second surface 32. The fourth surface 34 faces the opposite side of the third surface 33 in the x direction. The fifth surface 35 is located between the first surface 31 and the second surface 32 in the z direction, and in the illustrated example, is connected to the first surface 31 and the second surface 32. The fifth surface 35 faces the y direction. The sixth surface 36 is located between the first surface 31 and the second surface 32 in the z direction, and in the illustrated example, is connected to the first surface 31 and the second surface 32. The sixth surface 36 faces the opposite side to the fifth surface 35 in the y direction. In the illustrated example, the substrate 3 is rectangular when viewed in the z direction. Furthermore, the substrate 3 is elongated rectangular when viewed in the z direction, with the x direction as the longitudinal direction.

[0017] <Conductive part 5> The conductive portion 5 is formed on the substrate 3. In this embodiment, the conductive portion 5 is formed on the first surface 31 of the substrate 3. The conductive portion 5 is made of a conductive material. The conductive material constituting the conductive portion 5 is not particularly limited. Examples of conductive materials for the conductive portion 5 include those containing silver (Ag), copper (Cu), gold (Au), etc. In the following explanation, a case where the conductive portion 5 contains silver will be described as an example. Note that the conductive portion 5 may contain copper instead of silver, or may contain gold instead of silver or copper. Alternatively, the conductive portion 5 may contain Ag—Pt or Ag—Pd. The method for forming the conductive portion 5 is not limited, and it may be formed, for example, by firing a paste containing these metals. The thickness of the conductive portion 5 is not particularly limited, and is, for example, about 5 μm to 30 μm.

[0018] The shape of the conductive portion 5 is not particularly limited. For example, as shown in FIG. 16, Specifically, the conductive portion 5 will be described by dividing it into wiring portions 50A to 50P, a first base portion 55, a second base portion 56, and a connection portion 57.

[0019] The shape of the first base portion 55 is not particularly limited, and may be selected as appropriate from rectangular, polygonal, circular, elliptical, etc. In the illustrated example, the first base portion 55 is rectangular. Also, in the illustrated example, the first base portion 55 is elongated rectangular with the x direction as the longitudinal direction.

[0020] The shape of the second base portion 56 is not particularly limited, and may be selected as appropriate from rectangular, polygonal, circular, elliptical, etc. In the illustrated example, the second base portion 56 is rectangular. Also, in the illustrated example, the second base portion 56 is elongated rectangular with the x direction as the longitudinal direction.

[0021] The second base portion 56 is disposed closer to the fourth surface 34 than the first base portion 55 in the x direction. In the illustrated example, the side of the second base portion 56 on the sixth surface 36 side in the y direction is located at approximately the same position in the y direction as the side of the first base portion 55 on the sixth surface 36 side. Note that being located at approximately the same position in the y direction refers to, for example, being completely identical to each other or having a deviation of within ±5% of the representative dimension (the y direction dimension of the first base portion 55 or the second base portion 56). In the illustrated example, the side of the second base portion 56 on the fifth surface 35 side in the y direction is located closer to the sixth surface 36 than the side of the first base portion 55 on the fifth surface 35 side. In the illustrated example, the center of the second base portion 56 in the y direction is located closer to the sixth surface 36 than the center of the first base portion 55 in the y direction.

[0022] The connecting portion 57 is interposed between the first base portion 55 and the second base portion 56, and in the illustrated example, connects the first base portion 55 and the second base portion 56. In the illustrated example, the connecting portion 57 is located between the first base portion 55 and the second base portion 56 when viewed in the y direction. The shape of the connecting portion 57 is not particularly limited. In the illustrated example, the connecting portion 57 will be described by dividing it into a first portion 571, a second portion 572, and a third portion 573.

[0023] The first portion 571 is located between the first base portion 55 and the second base portion 56 when viewed in the y direction. The shape of the first portion 571 is not particularly limited, and in the illustrated example, it is a strip extending in the x direction. In the illustrated example, the dimension of the first portion 571 in the y direction is constant.

[0024] The second portion 572 is interposed between the first portion 571 and the first base portion 55, and in the illustrated example, connects the first portion 571 and the first base portion 55. The y-direction dimension of the second portion 572 is larger than the y-direction dimension of the first portion 571. The shape of the second portion 572 is not particularly limited, and in the illustrated example, the second portion 572 will be described as being divided into a fourth portion 572a and a fifth portion 572b. The fourth portion 572a is a portion whose y-direction dimension increases from the first portion 571 toward the first base portion 55. The fifth portion 572b is a portion whose y-direction dimension is constant. The x-direction dimension of the fifth portion 572b is larger than the x-direction dimension of the fourth portion 572a.

[0025] The third portion 573 is interposed between the first portion 571 and the second base portion 56, and in the example shown, connects the first portion 571 and the second base portion 56. The y-direction dimension of the third portion 573 is greater than the y-direction dimension of the first portion 571. The shape of the third portion 573 is not particularly limited, and in the example shown, the y-direction dimension of the third portion 573 increases from the first portion 571 toward the second base portion 56.

[0026] In the illustrated example, the sides of the first base portion 55, the second base portion 56, and the connecting portion 57 on the sixth surface 36 side in the y direction are at approximately the same position in the y direction. Note that being at approximately the same position in the y direction refers to, for example, being exactly the same as each other, or having a deviation within ±5% of the representative dimension (the dimension in the y direction of the first base portion 55 or the second base portion 56).

[0027] The wiring section 50A will be described by dividing it into a first section 51A, a second section 52A, and a third section 53A. do.

[0028] The shape of the first portion 51A is not particularly limited, and may be a rectangular, polygonal, circular, elliptical, or other suitable shape. In the illustrated example, the first portion 51A is rectangular. In this embodiment, the first portion 51A is disposed closer to the third surface 33 than the first base portion 55 in the x direction. In the illustrated example, the first portion 51A partially overlaps with the first base portion 55 when viewed in the x direction. The center of the first portion 51A in the y direction is located closer to the fifth surface 35 than the first base portion 55.

[0029] The second portion 52A is disposed closer to the fifth surface 35 in the y direction than the first portion 51A. The shape of the second portion 52A is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like, as appropriate. In the illustrated example, the second portion 52A is rectangular. In addition, in the illustrated example, one end of the second portion 52A in the x direction has a portion that extends closer to the third surface 33 in the x direction than the first portion 51A. In addition, one end of the first portion 51A in the x direction has a portion that extends closer to the fourth surface 34 in the x direction than the second portion 52A.

[0030] The third portion 53A is interposed between the first portion 51A and the second portion 52A and is connected to the first portion 51A and the second portion 52A in the illustrated example. The shape of the third portion 53A is not particularly limited, and in the illustrated example, it is rectangular. In the illustrated example, the side of the third portion 53A on the fourth surface 34 side in the x direction is connected in a straight line to the side of the second portion 52A on the fourth surface 34 side. Furthermore, the side of the third portion 53A on the third surface 33 side in the x direction is connected in a straight line to the side of the first portion 51A on the third surface 33 side. In the illustrated example, the second portion 52A and the third portion 53A are located closer to the third surface 33 in the x direction than the center of the first portion 51A in the x direction.

[0031] The wiring portion 50B will be described by dividing it into a first portion 51B, a second portion 52B, and a third portion 53B.

[0032] The shape of the first portion 51B is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the first portion 51B is rectangular. In this embodiment, the first portion 51B is disposed closer to the fifth surface 35 than the first base portion 55 in the y direction. The first portion 51B is also disposed closer to the fourth surface 34 than the first portion 51A in the x direction. In the illustrated example, the first portion 51B at least partially overlaps with the first portion 51A when viewed in the x direction, and substantially the entire first portion 51B overlaps with the first portion 51A. Note that "substantially the entire overlap" refers to complete overlap or a deviation of 5% or less between the first portion 51B and the first portion 51A. In the illustrated example, the center of the first portion 51B in the y direction is located closer to the fifth surface 35 than the center of the first portion 51A in the y direction. In the illustrated example, one end of first portion 51B in the x direction has a portion that extends in the x direction closer to third surface 33 than first base portion 55. In the illustrated example, the center of first portion 51B in the x direction overlaps with first base portion 55 when viewed in the y direction.

[0033] The second portion 52B is disposed closer to the fifth surface 35 than the first portion 51B in the y direction. The second portion 52B is disposed closer to the fourth surface 34 than the second portion 52A in the x direction, spaced apart by a distance G51. The shape of the second portion 52B is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like, as appropriate. In the illustrated example, the second portion 52B is rectangular. In the illustrated example, the second portion 52B is substantially entirely overlapped with the first portion 51B when viewed in the y direction. Note that "substantially entirely overlapped" refers to complete overlap between the first portion 51B and the second portion 52A, or a deviation of 5% or less between the first portion 51B and the second portion 52A. In the illustrated example, the second portion 52B is substantially coincident with the second portion 52A when viewed in the x direction. Note that "substantially coincident" when viewed in the x direction means, for example, complete agreement between the first portion 51B and the second portion 52A, or a deviation of 5% or less between the first portion 51B and the second portion 52A. In the illustrated example, the second portion 52B is shifted toward the third surface 33 from the center of the first portion 51B in the x direction.

[0034] The third portion 53B is interposed between the first portion 51B and the second portion 52B, and in the illustrated example, is connected to the first portion 51B and the second portion 52B. The shape of the third portion 53B is not particularly limited, and in the illustrated example, it is rectangular. In the illustrated example, the third portion 53B approximately coincides with the second portion 52B when viewed in the y direction. Note that "approximately coincident" when viewed in the y direction refers, for example, to whether they completely coincide with each other or whether there is a deviation within ±5% of the representative dimension (the x-direction dimension of the second portion 52B or the third portion 53B). In the illustrated example, the third portion 53B is shifted toward the third surface 33 from the center of the first portion 51B in the x direction.

[0035] The wiring portion 50C will be described by dividing it into a first portion 51C, a second portion 52C, and a third portion 53C.

[0036] The shape of the first portion 51C is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the first portion 51C is rectangular. In this embodiment, the first portion 51C is disposed closer to the fifth surface 35 than the first base portion 55 in the y direction. The first portion 51C is also disposed closer to the fourth surface 34 than the first portion 51A in the x direction. In the illustrated example, the first portion 51C coincides with the first portion 51B when viewed in the x direction. Note that "substantially coincident" when viewed in the x direction refers to, for example, complete coincidence with each other or a deviation within ±5% of the representative dimension (the y-direction dimension of the first portion 51B or the first portion 51C). In the illustrated example, the center of the first portion 51C in the y direction is located closer to the fifth surface 35 than the center of the first portion 51A in the y direction. In the illustrated example, the first portion 51C is shifted toward the fourth surface 34 from the center in the x direction of the first base portion 55. In the illustrated example, the center in the x direction of the first portion 51C overlaps with the first base portion 55 when viewed in the y direction.

[0037] The second portion 52C is disposed closer to the fifth surface 35 than the first portion 51C in the y direction. The second portion 52C is disposed closer to the fourth surface 34 than the second portion 52B in the x direction, spaced apart by a distance G52. In the illustrated example, the distance G52 is greater than the distance G51. The shape of the second portion 52C is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or other suitable shape. In the illustrated example, the second portion 52C is rectangular. In the illustrated example, the second portion 52C substantially entirely overlaps with the first portion 51C when viewed in the y direction. "Substantially entirely overlapping" refers to either a complete overlap or a deviation of 5% or less between the two portions. In the illustrated example, the second portion 52C substantially coincides with the second portion 52B when viewed in the x direction. Note that "substantially matching" when viewed in the x direction refers to, for example, whether they completely match each other or whether there is a deviation within ±5% of the representative dimension (the y direction dimension of second portion 52B or second portion 52C). In the illustrated example, second portion 52C is shifted toward fourth surface 34 from the center of first portion 51C in the x direction.

[0038] The third portion 53C is interposed between the first portion 51C and the second portion 52C, and in the illustrated example, is connected to the first portion 51C and the second portion 52C. The shape of the third portion 53C is not particularly limited, and in the illustrated example, it is rectangular. In the illustrated example, the third portion 53C substantially coincides with the second portion 52C when viewed in the y direction. Note that "substantially coincident" when viewed in the y direction refers, for example, to whether they completely coincide with each other or whether there is a deviation within ±5% of the representative dimension (the x-direction dimension of the second portion 52C or the third portion 53C). In the illustrated example, the third portion 53C substantially coincides with the third portion 53B when viewed in the x direction. Note that "substantially coincident" when viewed in the y direction refers, for example, to whether they completely coincide with each other or whether there is a deviation within ±5% of the representative dimension (the y-direction dimension of the third portion 53B or the third portion 53C). In the illustrated example, the third portion 53C is shifted toward the fourth surface 34 from the center of the first portion 51C in the x direction.

[0039] The wiring portion 50D will be described by dividing it into a first portion 51D, a second portion 52D, a third portion 53D, a fourth portion 54D, and a fifth portion 55D.

[0040] The first portion 51D is disposed closer to the fifth surface 35 than the first base portion 55 in the y direction. The shape of the first portion 51D is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the first portion 51D is rectangular and has an elongated rectangular shape with the y direction as the longitudinal direction. In the illustrated example, the first portion 51D overlaps with the first base portion 55 when viewed in the y direction. The side of the first portion 51D on the fourth surface 34 side in the x direction substantially coincides with the side of the first base portion 55 on the fourth surface 34 side when viewed in the y direction. Note that "substantially coincident" when viewed in the y direction refers, for example, to whether they completely coincide with each other or whether there is a deviation within ±5% of the representative dimension (the x-direction dimension of the first portion 51D or the first base portion 55). The y-direction dimension of the first portion 51D is smaller than the y-direction dimension of the first portion 51C.

[0041] The second portion 52D is disposed closer to the fifth surface 35 than the first portion 51D in the y direction. The second portion 52D is disposed closer to the fourth surface 34 than the first portion 51D in the x direction. The second portion 52D is disposed closer to the fourth surface 34 than the second portion 52C in the x direction, spaced apart by a distance G53. The distance G53 is substantially the same as the distance G52 (either identical or within a ±5% error range). The shape of the second portion 52D is not particularly limited, and may be a rectangular, polygonal, circular, elliptical, or other suitable shape. In the illustrated example, the second portion 52D is rectangular and has an elongated rectangular shape with the y direction as its longitudinal direction. In the illustrated example, the second portion 52D is spaced apart from the first portion 51D when viewed in the y direction. In the illustrated example, the second portion 52D substantially coincides with the second portion 52C when viewed in the x direction. Note that "substantially matching" when viewed in the x direction refers to, for example, whether they completely match each other or whether there is a deviation within ±5% of the representative dimension (the dimension in the y direction of the second portion 52C or the second portion 52D).

[0042] The third portion 53D is interposed between the first portion 51D and the second portion 52D, and in the illustrated example, is connected to a side of the first portion 51D facing the fourth surface 34 in the x direction. The shape of the third portion 53D is not particularly limited, and in the illustrated example, it is a strip extending in the x direction. The third portion 53D is spaced apart from the second portion 52D when viewed in the y direction.

[0043] The fourth portion 54D is interposed between the first portion 51D and the second portion 52D, and in the illustrated example, is connected to a side of the second portion 52D facing the sixth surface 36 in the y direction. The shape of the fourth portion 54D is not particularly limited, and in the illustrated example, it is a strip extending in the y direction. The fourth portion 54D is spaced apart from the first portion 51D when viewed in the x direction.

[0044] The fifth portion 55D is interposed between the third portion 53D and the fourth portion 54D, and in the example shown, is connected to the third portion 53D and the fourth portion 54D. The shape of the fifth portion 55D is not particularly limited, and in the example shown, it is a strip shape tilted with respect to the x and y directions.

[0045] The wiring portion 50E will be described by dividing it into a first portion 51E, a second portion 52E, a third portion 53E, a fourth portion 54E, and a fifth portion 55E.

[0046] The first portion 51E is disposed closer to the fifth surface 35 than the first base portion 55 in the y direction, and closer to the fourth surface 34 than the first portion 51D in the x direction. The first portion 51E is also disposed closer to the fourth surface 34 than the first portion 51D in the x direction. The shape of the first portion 51E is not particularly limited, and may be a rectangular, polygonal, circular, elliptical, or other suitable shape. In the illustrated example, the first portion 51E is rectangular and has an elongated rectangular shape with the x direction as the longitudinal direction. In the illustrated example, the first portion 51E is disposed closer to the first base portion 55 in the y direction. The first portion 51E overlaps with the first portion 51D in the x direction. Moreover, the first portion 51E overlaps with the second portion 52D when viewed in the y direction.

[0047] The second portion 52E is disposed closer to the fifth surface 35 than the first portion 51E in the y direction. The second portion 52E is disposed closer to the fourth surface 34 than the first portion 51E in the x direction. The second portion 52E is disposed closer to the fourth surface 34 than the second portion 52D in the x direction, spaced apart by a distance G54. The distance G54 is smaller than the distance G53. The size error of the distances G54 in the description of the wiring portions 50E to 50N is within ±5%. The shape of the second portion 52E is not particularly limited, and may be a rectangular, polygonal, circular, elliptical, or other suitable shape. In the illustrated example, the second portion 52E is rectangular and has an elongated rectangular shape with the y direction as its longitudinal direction. In the illustrated example, the second portion 52E is spaced apart from the first portion 51E when viewed in the y direction. In the illustrated example, second portion 52E substantially coincides with second portion 52D when viewed in the x direction. Note that substantially coincident when viewed in the x direction refers to, for example, complete coincidence with each other or a deviation within ±5% of the representative dimension (the y direction dimension of second portion 52D or second portion 52E).

[0048] The third portion 53E is interposed between the first portion 51E and the second portion 52E, and in the illustrated example, is connected to a side of the first portion 51E facing the fourth surface 34 in the x direction. The shape of the third portion 53E is not particularly limited, and in the illustrated example, it is a strip-like shape extending in the x direction. The third portion 53E is spaced apart from the second portion 52E when viewed in the y direction.

[0049] The fourth portion 54E is interposed between the first portion 51E and the second portion 52E, and in the illustrated example, is connected to a side of the second portion 52E facing the sixth surface 36 in the y direction. The shape of the fourth portion 54E is not particularly limited, and in the illustrated example, it is a strip extending in the y direction. The fourth portion 54E is spaced apart from the first portion 51E when viewed in the x direction.

[0050] The fifth portion 55E is interposed between the third portion 53E and the fourth portion 54E, and in the illustrated example, is connected to the third portion 53E and the fourth portion 54E. The shape of the fifth portion 55E is not particularly limited, and in the illustrated example, it is a strip shape tilted with respect to the x direction and the y direction.

[0051] The wiring portion 50F will be described by dividing it into a first portion 51F, a second portion 52F, a third portion 53F, a fourth portion 54F, and a fifth portion 55F.

[0052] The first portion 51F is disposed closer to the fourth surface 34 than the first base portion 55 in the x direction. The first portion 51F overlaps with the first base portion 55 when viewed in the x direction. The shape of the first portion 51F is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the first portion 51F is rectangular and has an elongated rectangular shape with the x direction as the longitudinal direction. The first portion 51F substantially coincides with 51E when viewed in the y direction. Note that substantially coinciding when viewed in the y direction refers, for example, to whether they completely coincide with each other or whether there is a deviation within ±5% of the representative dimension (the x-direction dimension of the first portion 51E or the first portion 51F).

[0053] The second portion 52F is disposed closer to the fifth surface 35 than the first portion 51F in the y direction. The second portion 52F is disposed closer to the fourth surface 34 than the first portion 51F in the x direction. The second portion 52F is disposed closer to the fourth surface 34 than the second portion 52E in the x direction, spaced apart by a distance G54. The shape of the second portion 52F is not particularly limited, and may be a rectangular, polygonal, circular, elliptical, or other suitable shape. In the illustrated example, the second portion 52F is rectangular and has an elongated rectangular shape with the y direction as its longitudinal direction. In the illustrated example, the second portion 52F is spaced apart from the first portion 51F when viewed in the y direction. In the illustrated example, the second portion 52F substantially coincides with the second portion 52E when viewed in the x direction. Note that "substantially matching" when viewed in the x direction means, for example, whether they completely match each other or whether there is a deviation within ±5% of the representative dimension (the dimension in the y direction of the second portion 52E or the second portion 52F).

[0054] The third portion 53F is interposed between the first portion 51F and the second portion 52F, and in the illustrated example, is connected to a side of the first portion 51F facing the fourth surface 34 in the x direction. The shape of the third portion 53F is not particularly limited, and in the illustrated example, it is a strip extending in the x direction. The third portion 53F is spaced apart from the second portion 52F when viewed in the y direction. The x-direction dimension of the third portion 53F is greater than the x-direction dimension of the third portion 53E.

[0055] The fourth portion 54F is interposed between the first portion 51F and the second portion 52F, and in the illustrated example, is connected to the side of the second portion 52F facing the sixth surface 36 in the y direction. The shape of the fourth portion 54F is not particularly limited, and in the illustrated example, it is a strip extending in the y direction. The fourth portion 54F is spaced apart from the first portion 51F when viewed in the x direction. The y-direction dimension of the fourth portion 54F is greater than the y-direction dimension of the fourth portion 54E.

[0056] The fifth portion 55F is interposed between the third portion 53F and the fourth portion 54F, and in the example shown, is connected to the third portion 53F and the fourth portion 54F. The shape of the fifth portion 55F is not particularly limited, and in the example shown, it is a strip shape tilted with respect to the x and y directions.

[0057] The wiring portion 50G will be described by dividing it into a first portion 51G, a second portion 52G, a third portion 53G, a fourth portion 54G, and a fifth portion 55G.

[0058] The first portion 51G is disposed closer to the fourth surface 34 than the first base portion 55 in the x direction and spaced apart from the first base portion 55. The first portion 51G overlaps with the first base portion 55 when viewed in the x direction. The shape of the first portion 51G is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the first portion 51G is rectangular and has an elongated rectangular shape with the x direction as the longitudinal direction. The first portion 51G substantially coincides with the fifth portion 51F when viewed in the y direction. Note that "substantially coincident" when viewed in the y direction refers to, for example, whether they completely coincide with each other or whether there is a deviation within ±5% of the representative dimension (the x-direction dimension of the first portion 51F or the first portion 51G). The first portion 51G overlaps with the fifth portion 572b when viewed in the y direction.

[0059] The second portion 52G is disposed closer to the fifth surface 35 than the first portion 51G in the y direction. The second portion 52G is disposed closer to the fourth surface 34 than the first portion 51G in the x direction. The second portion 52G is disposed closer to the fourth surface 34 than the second portion 52F in the x direction, spaced apart by a distance G54. The shape of the second portion 52G is not particularly limited, and may be a rectangular, polygonal, circular, elliptical, or other suitable shape. In the illustrated example, the second portion 52G is rectangular and has an elongated rectangular shape with the y direction as its longitudinal direction. In the illustrated example, the second portion 52G is spaced apart from the first portion 51G when viewed in the y direction. In the illustrated example, the second portion 52G substantially coincides with the second portion 52F when viewed in the x direction. Note that "substantially matching" when viewed in the x direction means, for example, whether they completely match each other or whether there is a deviation within ±5% of the representative dimension (the dimension in the y direction of the second portion 52F or the second portion 52G).

[0060] The third portion 53G is interposed between the first portion 51G and the second portion 52G, and in the illustrated example, is connected to a side of the first portion 51G facing the fourth surface 34 in the x direction. The shape of the third portion 53G is not particularly limited, and in the illustrated example, it is a strip extending in the x direction. The third portion 53G is spaced apart from the second portion 52G when viewed in the y direction. The x-direction dimension of the third portion 53G is greater than the x-direction dimension of the third portion 53F.

[0061] The fourth portion 54G is interposed between the first portion 51G and the second portion 52G, and in the illustrated example, is connected to the side of the second portion 52G facing the sixth surface 36 in the y direction. The shape of the fourth portion 54G is not particularly limited, and in the illustrated example, it is a strip extending in the y direction. The fourth portion 54G is spaced apart from the first portion 51G when viewed in the x direction. The y-direction dimension is greater than the y-direction dimension of the fourth portion 54F.

[0062] The fifth portion 55G is interposed between the third portion 53G and the fourth portion 54G, and in the illustrated example, is connected to the third portion 53G and the fourth portion 54G. The shape of the fifth portion 55G is not particularly limited, and in the illustrated example, it is a strip shape tilted with respect to the x direction and the y direction.

[0063] The wiring portion 50H will be described by dividing it into a second portion 52H and a fourth portion 54H.

[0064] The second portion 52H is disposed closer to the fifth surface 35 than the second base portion 56 in the y direction. The second portion 52H is disposed closer to the fourth surface 34 than the second portion 52G in the x direction, spaced apart by a distance H54. The shape of the second portion 52H is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the second portion 52H is rectangular and has an elongated rectangular shape with the y direction as the longitudinal direction. The second portion 52H also overlaps with the second base portion 56 when viewed in the y direction. In the illustrated example, the second portion 52H substantially coincides with the second portion 52G when viewed in the x direction. Note that "substantially coincident" when viewed in the x direction refers, for example, to whether they completely coincide with each other or whether there is a deviation within ±5% of the representative dimension (the y-direction dimension of the second portion 52G or the second portion 52H).

[0065] The fourth portion 54H is interposed between the second base portion 56 and the second portion 52H, and in the example shown, is connected to the second base portion 56 and the second portion 52H. The fourth portion 54H is connected to a side of the second base portion 56 facing the fifth surface 35 in the y direction and a side of the second portion 52H facing the sixth surface 36 in the y direction. The shape of the fourth portion 54H is not particularly limited, and in the example shown, it is a strip-like shape extending in the y direction.

[0066] The wiring portion 50I will be described by dividing it into a first portion 51I, a second portion 52I, a third portion 53I, a fourth portion 54I, and a fifth portion 55I.

[0067] The first portion 51I is disposed closer to the fifth surface 35 than the second base portion 56 in the y direction and spaced apart from the second base portion 56. The shape of the first portion 51I is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like, as appropriate. In the illustrated example, the first portion 51I is rectangular and has an elongated rectangular shape with the y direction as the longitudinal direction. In the illustrated example, the first portion 51I overlaps with the second base portion 56 when viewed in the y direction. Furthermore, the first portion 51I is spaced apart from the second portion 52H when viewed in the y direction.

[0068] The second portion 52I is disposed closer to the fifth surface 35 than the first portion 51I in the y direction. The second portion 52I is disposed closer to the fourth surface 34 than the second portion 52H in the x direction, spaced apart by a distance G54. The shape of the second portion 52I is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the second portion 52I is rectangular and has an elongated rectangular shape with the y direction as its longitudinal direction. In the illustrated example, the second portion 52I is spaced from the first portion 51I when viewed in the y direction. The second portion 52I substantially entirely overlaps with the second base portion 56 when viewed in the y direction. "Substantially entirely overlapping" refers to either complete overlap or a misalignment within 5% of each other. In the illustrated example, the second portion 52I substantially coincides with the second portion 52H when viewed in the x direction. Note that "substantially matching" when viewed in the x direction means, for example, whether they completely match each other or whether there is a deviation within ±5% of the representative dimension (the dimension in the y direction of the second portion 52H or the second portion 52I).

[0069] The third part 53I is interposed between the first part 51I and the second part 52I, and in the example shown, is connected to a side of the first part 51I in the y direction facing the fifth surface 35. The shape of the third part 53I is not particularly limited, and in the example shown, it is a strip shape extending in the y direction.

[0070] The fourth part 54I is interposed between the first part 51I and the second part 52I, and in the example shown, is connected to a side of the second part 52I in the y direction that faces the sixth surface 36. The shape of the fourth part 54I is not particularly limited, and in the example shown, it is a strip shape extending in the y direction.

[0071] The fifth portion 55I is interposed between the third portion 53I and the fourth portion 54I, and in the example shown, is connected to the third portion 53I and the fourth portion 54I. The shape of the fifth portion 55I is not particularly limited, and in the example shown, it is a strip shape tilted with respect to the x direction and the y direction.

[0072] The wiring portion 50J will be described by dividing it into a first portion 51J, a second portion 52J, a third portion 53J, a fourth portion 54J, and a fifth portion 55J.

[0073] The first portion 51J is spaced apart from the first portion 51I by a distance G55 in the x direction, closer to the fourth surface 34 than the first portion 51I. In the illustrated example, the distance G55 is smaller than the distance G54. The first portion 51J is spaced apart from the second base portion 56 in the y direction, closer to the fifth surface 35. The shape of the first portion 51J is not particularly limited, and a rectangular, polygonal, circular, elliptical, or other shape may be appropriately selected. In the illustrated example, the first portion 51J is rectangular and has an elongated rectangular shape with the y direction as the longitudinal direction. In the illustrated example, the first portion 51J overlaps with the second base portion 56 when viewed in the y direction. Furthermore, the first portion 51J overlaps with the second portion 52I when viewed in the y direction. In the illustrated example, the first portion 51J substantially coincides with the first portion 51I when viewed in the x direction. Note that "substantially matching" when viewed in the x direction means, for example, whether they completely match each other or whether there is a deviation within ±5% of the representative dimension (the dimension in the y direction of the first portion 51I or the first portion 51J).

[0074] The second portion 52J is disposed closer to the fifth surface 35 than the first portion 51J in the y direction. The second portion 52J is disposed closer to the fourth surface 34 than the second portion 52I in the x direction, spaced apart by a distance G54. The shape of the second portion 52J is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the second portion 52J is rectangular and has an elongated rectangular shape with the y direction as its longitudinal direction. In the illustrated example, the second portion 52J is spaced from the first portion 51J when viewed in the y direction. The second portion 52J substantially entirely overlaps with the second base portion 56 when viewed in the y direction. "Substantially entirely overlapping" refers to either complete overlap or a misalignment within 5% of each other. In the illustrated example, the second portion 52J substantially coincides with the second portion 52I when viewed in the x direction. Note that "substantially matching" when viewed in the x direction refers to, for example, whether they completely match each other or whether there is a deviation within ±5% of the representative dimension (the dimension in the y direction of the second portion 52I or the second portion 52J).

[0075] The third portion 53J is interposed between the first portion 51J and the second portion 52J, and in the illustrated example, is connected to a side of the first portion 51J facing the fifth surface 35 in the y direction. The shape of the third portion 53J is not particularly limited, and in the illustrated example, it is a strip extending in the y direction. The y-direction dimension of the third portion 53J is smaller than the y-direction dimension of the third portion 53I.

[0076] The fourth portion 54J is interposed between the first portion 51J and the second portion 52J, and in the illustrated example, is connected to the side of the second portion 52J facing the sixth surface 36 in the y direction. The shape of the fourth portion 54J is not particularly limited, and in the illustrated example, it is a strip extending in the y direction. The y-direction dimension of the fourth portion 54J is smaller than the y-direction dimension of the fourth portion 54I.

[0077] The fifth portion 55J is interposed between the third portion 53J and the fourth portion 54J, and in the illustrated example, is connected to the third portion 53J and the fourth portion 54J. The shape of the fifth portion 55J is not particularly limited, and in the illustrated example, it is a strip shape tilted with respect to the x direction and the y direction.

[0078] The wiring section 50K includes a first section 51K, a second section 52K, a third section 53K, a fourth section 54K, and a fourth section 55K. The explanation will be divided into 5 parts, 55 pages in length.

[0079] The first portion 51K is disposed at a distance G55 closer to the fourth surface 34 than the first portion 51J in the x direction. The first portion 51K is disposed at a distance G55 closer to the fifth surface 35 than the second base portion 56 in the y direction. The shape of the first portion 51K is not particularly limited, and a rectangular, polygonal, circular, elliptical, or other shape may be selected as appropriate. In the illustrated example, the first portion 51K is rectangular and has an elongated rectangular shape with the y direction as the longitudinal direction. In the illustrated example, the first portion 51K overlaps with the second base portion 56 when viewed in the y direction. Furthermore, the first portion 51K overlaps with the second portion 52J when viewed in the y direction. In the illustrated example, the first portion 51K substantially coincides with the first portion 51J when viewed in the x direction. Note that "substantially matching" when viewed in the x direction means, for example, whether they completely match each other or whether there is a deviation within ±5% of the representative dimension (the dimension in the y direction of the first portion 51J or the first portion 51K).

[0080] The second portion 52K is disposed closer to the fifth surface 35 than the first portion 51K in the y direction. The second portion 52K is disposed closer to the fourth surface 34 than the second portion 52J in the x direction, spaced apart by a distance G54. The shape of the second portion 52K is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the second portion 52K is rectangular and has an elongated rectangular shape with the y direction as its longitudinal direction. In the illustrated example, the second portion 52K is spaced apart from the first portion 51K when viewed in the y direction. The second portion 52K substantially entirely overlaps with the second base portion 56 when viewed in the y direction. "Substantially entirely overlapping" refers to either complete overlap or a misalignment within 5% of each other. In the illustrated example, the second portion 52K substantially coincides with the second portion 52J when viewed in the x direction. Note that "substantially matching" when viewed in the x direction refers to, for example, whether they completely match each other or whether there is a deviation within ±5% of the representative dimension (the dimension in the y direction of the second portion 52J or the second portion 52K).

[0081] The third portion 53K is interposed between the first portion 51K and the second portion 52K, and in the illustrated example, is connected to a side of the first portion 51K facing the fifth surface 35 in the y direction. The shape of the third portion 53K is not particularly limited, and in the illustrated example, it is a strip extending in the y direction. The y direction dimension of the third portion 53K is smaller than the y direction dimension of the third portion 53J.

[0082] The fourth portion 54K is interposed between the first portion 51K and the second portion 52K, and in the illustrated example, is connected to the side of the second portion 52K facing the sixth surface 36 in the y direction. The shape of the fourth portion 54K is not particularly limited, and in the illustrated example, it is a strip extending in the y direction. The y-direction dimension of the fourth portion 54K is smaller than the y-direction dimension of the fourth portion 54J.

[0083] The fifth portion 55K is interposed between the third portion 53K and the fourth portion 54K, and in the example shown, is connected to the third portion 53K and the fourth portion 54K. The shape of the fifth portion 55K is not particularly limited, and in the example shown, it is a strip shape tilted with respect to the x and y directions.

[0084] The wiring portion 50L will be described by dividing it into a first portion 51L, a second portion 52L, a third portion 53L, a fourth portion 54L, and a fifth portion 55L.

[0085] The first portion 51L is disposed at a distance G55 closer to the fourth surface 34 than the first portion 51K in the x direction. The first portion 51L is disposed at a distance G55 closer to the fifth surface 35 than the second base portion 56 in the y direction. The shape of the first portion 51L is not particularly limited, and a rectangular, polygonal, circular, elliptical, or other shape may be selected as appropriate. In the illustrated example, the first portion 51L is rectangular and has an elongated rectangular shape with the y direction as the longitudinal direction. In the illustrated example, the first portion 51L overlaps with the second base portion 56 when viewed in the y direction. Furthermore, the first portion 51L is located between the second portion 52J and the second portion 52K when viewed in the y direction. In the illustrated example, the first portion 51L substantially coincides with the first portion 51K when viewed in the x direction. Note that, when viewed in the x direction, In this case, "substantially matching" refers to, for example, whether they completely match each other or whether there is a deviation within ±5% of the representative dimension (the dimension in the y direction of the first portion 51K or the first portion 51L).

[0086] The second portion 52L is disposed closer to the fifth surface 35 than the first portion 51L in the y direction. The second portion 52L is disposed closer to the fourth surface 34 than the second portion 52K in the x direction, spaced apart by a distance G54. The shape of the second portion 52L is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the second portion 52L is rectangular and has an elongated rectangular shape with the y direction as its longitudinal direction. In the illustrated example, the second portion 52L is spaced apart from the first portion 51L when viewed in the y direction. The second portion 52L is spaced apart from the second base portion 56 when viewed in the y direction. In the illustrated example, the second portion 52L substantially coincides with the second portion 52K when viewed in the x direction. Note that "substantially matching" when viewed in the x direction means, for example, whether they completely match each other or whether there is a deviation within ±5% of the representative dimension (the y direction dimension of the second portion 52K or the second portion 52L).

[0087] The third portion 53L is interposed between the first portion 51L and the second portion 52L, and in the illustrated example, is connected to a side portion of the first portion 51L that faces the fifth surface 35 in the y direction. The shape of the third portion 53L is not particularly limited, and in the illustrated example, it is a strip extending in the y direction. The dimension of the third portion 53L in the y direction is smaller than the dimension of the third portion 53K in the y direction.

[0088] The fourth portion 54L is interposed between the first portion 51L and the second portion 52L, and in the example shown, is connected to the side of the second portion 52L facing the sixth surface 36 in the y direction. The shape of the fourth portion 54L is not particularly limited, and in the example shown, it is a strip extending in the y direction. The dimension in the y direction of the fourth portion 54L is smaller than the dimension in the y direction of the fourth portion 54K.

[0089] The fifth portion 55L is interposed between the third portion 53L and the fourth portion 54L, and in the example shown, is connected to the third portion 53L and the fourth portion 54L. The shape of the fifth portion 55L is not particularly limited, and in the example shown, it is a strip shape tilted with respect to the x and y directions.

[0090] The wiring portion 50M will be described by dividing it into a first portion 51M, a second portion 52M, a third portion 53M, a fourth portion 54M, and a fifth portion 55M.

[0091] The first portion 51M is disposed at a distance G55 closer to the fourth surface 34 than the first portion 51L in the x direction. The first portion 51M is disposed at a distance G55 closer to the fifth surface 35 than the second base portion 56 in the y direction. The shape of the first portion 51M is not particularly limited, and a rectangular, polygonal, circular, elliptical, or other shape may be appropriately selected. In the illustrated example, the first portion 51M is rectangular. In the illustrated example, the first portion 51M overlaps with the second base portion 56 when viewed in the y direction. The first portion 51M also overlaps with the second portion 52K when viewed in the y direction. In the illustrated example, the first portion 51M substantially coincides with the first portion 51L when viewed in the x direction. Note that "substantially coincident" when viewed in the x direction refers, for example, to whether they completely coincide with each other or whether there is a deviation within ±5% of the representative dimension (the y-direction dimension of the first portion 51L or the first portion 51M).

[0092] The second portion 52M is disposed closer to the fifth surface 35 than the first portion 51M in the y direction. The second portion 52M is disposed closer to the fourth surface 34 than the second portion 52L in the x direction, spaced apart by a distance G54. The shape of the second portion 52M is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like, as appropriate. In the illustrated example, the second portion 52M is rectangular and has an elongated rectangular shape with the y direction as the longitudinal direction. In the illustrated example, the second portion 52M is spaced apart from the first portion 51M when viewed in the y direction. The second portion 52M is spaced apart from the second base portion 56 when viewed in the y direction. In the illustrated example, the second portion 52M is substantially coincident with the second portion 52L when viewed in the x direction. Note that the second portion 52M is substantially aligned with the second portion 52L when viewed in the x direction. Matching refers to, for example, whether they completely match each other or whether there is a deviation within ±5% of the representative dimension (the dimension in the y direction of the second portion 52L or the second portion 52M).

[0093] The third portion 53M is interposed between the first portion 51M and the second portion 52M, and in the example shown, is connected to a side of the first portion 51M in the x direction that faces the fourth surface 34. The shape of the third portion 53M is not particularly limited, and in the example shown, it is a strip-like shape extending in the x direction.

[0094] The fourth portion 54M is interposed between the first portion 51M and the second portion 52M, and in the illustrated example, is connected to the side of the second portion 52M facing the sixth surface 36 in the y direction. The shape of the fourth portion 54M is not particularly limited, and in the illustrated example, it is a strip extending in the y direction. The y-direction dimension of the fourth portion 54M is greater than the y-direction dimension of the fourth portion 54L.

[0095] The fifth portion 55M is interposed between the third portion 53M and the fourth portion 54M, and in the illustrated example, is connected to the third portion 53M and the fourth portion 54M. The shape of the fifth portion 55M is not particularly limited, and in the illustrated example, it is a strip shape tilted with respect to the x and y directions.

[0096] The wiring portion 50N will be described by dividing it into a first portion 51N, a second portion 52N, and a fifth portion 55N.

[0097] The first portion 51N is disposed closer to the fifth surface 35 than the second base portion 56 in the y direction. The shape of the first portion 51N is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the first portion 51N is rectangular. In the illustrated example, the first portion 51N is spaced apart from the second base portion 56 when viewed in the y direction. Furthermore, the first portion 51N overlaps with the second portion 52K when viewed in the y direction. Furthermore, the first portion 51N overlaps with the second base portion 56 and the first portion 51M when viewed in the x direction.

[0098] The second portion 52N is disposed closer to the fifth surface 35 than the first portion 51N in the y direction. The second portion 52N is disposed closer to the fourth surface 34 than the second portion 52M in the x direction, spaced apart by a distance G54. The shape of the second portion 52N is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the second portion 52N is rectangular and has an elongated rectangular shape with the y direction as its longitudinal direction. In the illustrated example, the second portion 52N is spaced apart from the first portion 51N when viewed in the y direction. The second portion 52N is spaced apart from the second base portion 56 when viewed in the y direction. In the illustrated example, the second portion 52N substantially coincides with the second portion 52M when viewed in the x direction. Note that "substantially matching" when viewed in the x direction means, for example, whether they completely match each other or whether there is a deviation within ±5% of the representative dimension (the dimension in the y direction of the second portion 52M or the second portion 52N).

[0099] The fifth portion 55N is interposed between the first portion 51N and the second portion 52N, and in the example shown, is connected to the first portion 51N and the second portion 52N. The shape of the fifth portion 55N is not particularly limited, and in the example shown, it is a strip shape tilted with respect to the x and y directions.

[0100] The wiring portion 50O will be described by dividing it into a first portion 51O, a second portion 52O, a third portion 53O, and a fifth portion 55O.

[0101] The first portion 51O is disposed closer to the fourth surface 34 than the second base portion 56 in the x direction and is connected to the second base portion 56. The shape of the first portion 51O is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like, as appropriate. In the illustrated example, the first portion 51O is rectangular and has an elongated rectangular shape with the x direction as the longitudinal direction. In the illustrated example, the first portion 51O overlaps with the second base portion 56 when viewed in the x direction.

[0102] The second portion 52O is disposed closer to the fifth surface 35 than the first portion 51O in the y direction, and closer to the fourth surface 34 in the x direction. The second portion 52O is disposed closer to the sixth surface 36 than the second portion 52N in the y direction. The shape of the second portion 52O is not particularly limited, and may be a rectangular, polygonal, circular, elliptical, or other suitable shape. In the illustrated example, the second portion 52O is rectangular and has an elongated rectangular shape with the y direction as its longitudinal direction. In the illustrated example, the second portion 52O is spaced apart from the first portion 51O and the first portion 51M when viewed in the y direction. The second portion 52O is spaced apart from the second base portion 56 when viewed in the y direction, and overlaps with the second portion 52N.

[0103] The third portion 53O is interposed between the first portion 51O and the second portion 52O, and in the example shown, is connected to a side portion of the first portion 51O that faces the fourth surface 34 in the x direction. The shape of the third portion 53O is not particularly limited, and in the example shown, it is a strip-like shape extending in the x direction.

[0104] The fifth portion 55O is interposed between the first portion 51O and the third portion 53O, and in the illustrated example, is connected to the first portion 51O and the third portion 53O. The shape of the fifth portion 55O is not particularly limited, and in the illustrated example, it is a strip shape tilted with respect to the x direction and the y direction.

[0105] The wiring portion 50P will be described by dividing it into a first portion 51P, a second portion 52P, a third portion 53P, and a fifth portion 55P.

[0106] The first portion 51P is disposed closer to the fourth surface 34 than the second base portion 56 in the x direction. The shape of the first portion 51P is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the first portion 51P is rectangular and has an elongated rectangular shape with the x direction as the longitudinal direction. In the illustrated example, the first portion 51P overlaps with the second base portion 56 when viewed in the x direction. Furthermore, the first portion 51P overlaps with the first portion 51O when viewed in the y direction.

[0107] The second portion 52P is disposed closer to the fifth surface 35 than the first portion 51P in the y direction and closer to the fourth surface 34 in the x direction. The second portion 52P is disposed closer to the sixth surface 36 than the second portion 52O in the y direction. The shape of the second portion 52P is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the second portion 52P is rectangular and has an elongated rectangular shape with the y direction as the longitudinal direction. In the illustrated example, the second portion 52P is spaced apart from the first portion 51P and the second portion 52M when viewed in the y direction. In the illustrated example, the second portion 52P is spaced apart from the second base portion 56 when viewed in the y direction and overlaps with the second portion 52N. In the illustrated example, the second portion 52P substantially coincides with the second portion 52O when viewed in the y direction. Note that "substantially matching" when viewed in the y direction means, for example, whether they completely match each other or whether there is a deviation within ±5% of the representative dimension (the dimension in the x direction of the second portion 52O or the second portion 52P).

[0108] The third portion 53P is interposed between the first portion 51P and the second portion 52P, and in the example shown, is connected to a side of the first portion 51P in the x direction facing the fourth surface 34. The shape of the third portion 53P is not particularly limited, and in the example shown, it is a strip-like shape extending in the x direction.

[0109] The fifth portion 55P is interposed between the first portion 51P and the third portion 53P, and in the illustrated example, is connected to the first portion 51P and the third portion 53P. The shape of the fifth portion 55P is not particularly limited, and in the illustrated example, it is a strip shape tilted with respect to the x and y directions.

[0110] The wiring portions 50A to 50P are formed in a region on the fifth surface 35 side in the y direction of the substrate 3. This region on the fifth surface 35 side is defined as a second region 30B.

[0111] <Joint part 6> A plurality of bonding portions 6 are formed on the substrate 3. In this embodiment, the plurality of bonding portions 6 are formed on the first surface 31 of the substrate 3. The material of the bonding portions 6 is not particularly limited, and for example, they are made of a material capable of bonding the substrate 3 and the lead 1. The bonding portions 6 are made of, for example, a conductive material. The conductive material constituting the bonding portions 6 is not particularly limited. Examples of conductive materials for the bonding portions 6 include silver (Ag), copper (Cu), gold (Au), etc. In the following description, an example will be described in which the bonding portions 6 contain silver. In this example, the bonding portions 6 contain the same conductive material as the conductive portions 5. Note that the bonding portions 6 may contain copper instead of silver, or may contain gold instead of silver or copper. Alternatively, the conductive portions 5 may contain Ag—Pt or Ag—Pd. The method for forming the bonding portions 6 is not particularly limited, and for example, they may be formed by firing a paste containing these metals, similar to the conductive portions 5. The thickness of the joint 6 is not particularly limited, and is, for example, about 5 μm to 30 μm.

[0112] In this embodiment, the plurality of joints 6 include joints 6A to 6D.

[0113] The joint 6A is disposed closer to the sixth surface 36 than the conductive portion 5 in the y direction. The joint 6A overlaps with the entire first base portion 55 when viewed in the y direction. The shape of the joint 6A is not particularly limited, and in the illustrated example, the joint 6A has a first side 61A, a second side 62A, a third side 63A, a fourth side 64A, a fifth side 65Aa, a sixth side 66Aa, a seventh side 65Ab, and an eighth side 66Ab.

[0114] The first side 61A is a side that extends in the y direction. In the illustrated example, the first side 61A overlaps with the first portion 51A when viewed in the y direction.

[0115] The second side 62A is located on the opposite side of the first side 61A in the x direction across the center of the joint 6A in the x direction, and is a side that extends in the y direction. In the example shown, the second side 62A overlaps with the first part 571 of the connection portion 57 when viewed in the y direction. The dimension of the second side 62A in the y direction is smaller than the dimension of the first side 61A in the y direction.

[0116] The third side 63A connects the ends of the first side 61A and the second side 62A that are closer to the fifth surface 35 in the y direction. The third side 63A is a side that extends in the x direction. The third side 63A is disposed apart from the first base portion 55 in the y direction. In the illustrated example, the third side 63A overlaps with at least the first portion 51A, the first base portion 55, and the first portion 571 when viewed in the y direction.

[0117] The fourth side 64A is located on the opposite side of the third side 63A in the y direction across the center of the joint 6A in the y direction. The fourth side 64A is a side that extends in the x direction. The x-direction dimension of the fourth side 64A is smaller than the x-direction dimension of the third side 63A. When viewed in the y direction, the fourth side 64A entirely overlaps with the third side 63A.

[0118] The fifth side 65Aa is connected to the end of the first side 61A on the sixth surface 36 side in the y direction. In the example shown, the fifth side 65Aa is inclined with respect to the x and y directions. The seventh side 65Ab is connected to the end of the second side 62A on the sixth surface 36 side in the y direction. In the example shown, the seventh side 65Ab is inclined with respect to the x and y directions.

[0119] The sixth side 66Aa connects the end of the fifth side 65Aa on the sixth surface 36 side in the y direction to the end of the fourth side 64A in the x direction. In the illustrated example, the sixth side 66Aa is a side along the y direction. The eighth side 66Ab connects the end of the seventh side 65Ab on the sixth surface 36 side in the y direction to the end of the fourth side 64A in the x direction. In the illustrated example, the eighth side 66Ab is a side along the y direction.

[0120] The joint 6B is disposed closer to the sixth surface 36 than the conductive portion 5 in the y direction. The joint 6B is disposed closer to the fourth surface 34 than the joint 6A in the x direction. In the example shown, the joint 6B overlaps with the first portion 571, the third portion 573, and the second base portion 56 when viewed in the y direction. The shape of the joint 6B is not particularly limited, and in the example shown, the joint 6B has a first side 61B, a second side 62B, a third side 63B, a fourth side 64B, a fifth side 65B, a sixth side 66B, and an eighth side 68B.

[0121] The first side 61B is a side that extends in the y direction. The first side 61B faces the second side 62A. In the example shown, the first side 61B overlaps with the first portion 571 when viewed in the y direction.

[0122] The second side 62B is located on the opposite side of the first side 61B in the x direction across the center of the joint 6B in the x direction, and is a side that extends in the y direction. In the example shown, the second side 62B overlaps with the second base portion 56 when viewed in the y direction. The y direction dimension of the second side 62B is smaller than the y direction dimension of the first side 61B. Furthermore, the y direction dimension of the second side 62B is approximately the same as the y direction dimension of the second side 62A (either exactly the same or with an error within ±5%).

[0123] The third side 63B connects the ends of the first side 61B and the second side 62B on the fifth surface 35 side in the y direction. The third side 63B is a side extending in the x direction. In the illustrated example, the third side 63B overlaps with at least the first portion 571, the third portion 573, and the second base portion 56 when viewed in the y direction. In the illustrated example, the third side 63B is located at approximately the same position as the third side 63A in the y direction. Note that being located at approximately the same position in the y direction refers to, for example, being exactly the same as each other or being deviated from the representative dimension (the y-direction dimension of the joint 6A or the joint 6B) by within ±5%.

[0124] The fourth side 64B is located on the opposite side of the third side 63B in the y direction across the center of the joint 6B in the y direction. The fourth side 64B is a side that extends in the x direction. The fourth side 64B is connected to the end of the first side 61B on the sixth surface 36 side in the y direction. The x-direction dimension of the fourth side 64B is smaller than the x-direction dimension of the third side 63B. When viewed in the y direction, the entire fourth side 64B overlaps with the third side 63B.

[0125] The fifth side 65B is connected to the end of the second side 62B in the y direction that faces the sixth surface 36. In the example shown, the fifth side 65B is inclined with respect to the x and y directions.

[0126] The sixth side 66B is connected to the end of the fourth side 64B in the x direction that faces the fourth surface 34. In the example shown, the sixth side 66B is a side that extends along the y direction.

[0127] The eighth side 68B is connected to the fifth side 65B and the sixth side 66B. In the illustrated example, the eighth side 68B is a side that extends in the x-direction.

[0128] The joint 6C is disposed closer to the sixth surface 36 than the conductive portion 5 in the y direction. The joint 6C is disposed closer to the fourth surface 34 than the joint 6B in the x direction. In the example shown, all of the joints 6C overlap with the second base portion 56 when viewed in the y direction. The shape of the joint 6C is not particularly limited, and in the example shown, the joint 6C has a first side 61C, a second side 62C, a third side 63C, a fourth side 64C, a fifth side 65C, a sixth side 66C, and an eighth side 68C.

[0129] The first side 61C is a side that extends in the y direction. The first side 61C faces the second side 62B. In the example shown, the first side 61C overlaps with the second base portion 56 when viewed in the y direction.

[0130] The second side 62C is located on the opposite side of the first side 61C in the x direction across the center of the joint 6C in the x direction, and is a side that extends in the y direction. In the example shown, the second side 62C overlaps with the second base portion 56 when viewed in the y direction. The y direction dimension of the second side 62C is smaller than the y direction dimension of the first side 61C. Furthermore, the y direction dimension of the second side 62C is approximately the same as the y direction dimension of the second side 62B (either exactly the same or with an error within ±5%).

[0131] The third side 63C connects the ends of the first side 61C and the second side 62C on the fifth surface 35 side in the y direction. The third side 63C is a side extending in the x direction. In the illustrated example, the third side 63C overlaps with the second base portion 56 when viewed in the y direction. In the illustrated example, the third side 63C is located at approximately the same position as the third side 63B in the y direction. Note that being located at approximately the same position in the y direction refers to, for example, being exactly the same as each other or being deviated from the representative dimension (the y-direction dimension of the joint 6B or the joint 6C) by within ±5%.

[0132] The fourth side 64C is located on the opposite side of the third side 63C in the y direction across the y-direction center of the joint 6C. The fourth side 64C is a side that extends in the x direction. The fourth side 64C is connected to the end of the first side 61C on the sixth surface 36 side in the y direction. The x-direction dimension of the fourth side 64C is smaller than the x-direction dimension of the third side 63C. The entire fourth side 64C overlaps with the third side 63C when viewed in the y direction.

[0133] The fifth side 65C is connected to the end of the second side 62C in the y direction that faces the sixth surface 36. In the example shown, the fifth side 65C is inclined with respect to the x and y directions.

[0134] The sixth side 66C is connected to the end of the fourth side 64C in the x direction that faces the fourth surface 34. In the example shown, the sixth side 66C is a side that extends along the y direction.

[0135] The eighth side 68C is connected to the fifth side 65C and the sixth side 66C. In the illustrated example, the eighth side 68C is a side that extends in the x-direction.

[0136] The joint 6D is disposed closer to the sixth surface 36 than the conductive portion 5 in the y direction. The joint 6D is disposed closer to the fourth surface 34 than the joint 6C in the x direction. In the illustrated example, the joint 6D overlaps with the second base portion 56, the first portion 51P, the third portion 53P, and the second portion 52P when viewed in the y direction. The shape of the joint 6D is not particularly limited, and in the illustrated example, the joint 6D has a first side 61D, a second side 62D, a third side 63D, a fourth side 64D, and a fifth side 65D.

[0137] The first side 61D is a side that extends in the y direction. The first side 61D faces the second side 62C. In the example shown, the first side 61D overlaps with the second base portion 56 when viewed in the y direction.

[0138] The second side 62D is located on the opposite side of the first side 61D in the x direction across the center of the joint 6D in the x direction, and is a side that extends in the y direction. In the example shown, the second side 62D overlaps with the second part 52P when viewed in the y direction. The dimension of the second side 62D in the y direction is smaller than the dimension of the first side 61D in the y direction.

[0139] The third side 63D connects the ends of the first side 61D and the second side 62D on the fifth surface 35 side in the y direction. The third side 63D is a side that extends in the x direction. The three sides 63D overlap with the second base portion 56, the first portion 51P, the third portion 53P, and the second portion 52P when viewed in the y direction. In the illustrated example, the third side 63D is located at approximately the same position as the third side 63C in the y direction. Note that being located at approximately the same position in the y direction refers to, for example, being exactly the same as each other or being deviated from the representative dimension (the dimension of the joints 6C and 6D in the y direction) by within ±5%.

[0140] The fourth side 64D is located on the opposite side of the third side 63D in the y direction across the y-direction center of the joint 6D. The fourth side 64D is a side that extends in the x direction. The fourth side 64D is connected to the end of the first side 61D on the sixth surface 36 side in the y direction. The x-direction dimension of the fourth side 64D is smaller than the x-direction dimension of the third side 63D. The entire fourth side 64D overlaps with the third side 63D when viewed in the y direction.

[0141] The fifth side 65D is connected to the second side 62D and the fourth side 64D. In the illustrated example, the fifth side 65D is inclined with respect to the x direction and the y direction.

[0142] The bonding portions 6A to 6D are formed in a region of the substrate 3 closer to the sixth surface 36 in the y direction than the conductive portion 5. In a plan view, the region of the substrate 3 closer to the sixth surface 36 where the bonding portions 6 are formed is defined as a first region 30A.

[0143] <Lead 1> The leads 1 are made of a material containing metal and have better heat dissipation characteristics than the substrate 3, for example. The metal constituting the leads 1 is not particularly limited, and may be, for example, copper (Cu), aluminum, iron (Fe), oxygen-free copper, or an alloy thereof (for example, a Cu-Sn alloy, a Cu-Zr alloy, a Cu-Fe alloy, etc.). The leads 1 may also be plated with nickel (Ni). The leads 1 may be formed, for example, by pressing a mold against a metal plate, or by patterning a metal plate by etching, but are not limited to these. The thickness of the leads 1 is not particularly limited, and may be, for example, about 0.4 mm to 0.8 mm.

[0144] In this embodiment, the leads 1 include leads 1A to 1G and 1Z as shown in Figures 1 to 4. The leads 1A to 1G form conduction paths to, for example, semiconductor chips 4A to 4F.

[0145] The lead 1A is disposed on the substrate 3, and in this embodiment, is disposed on the first surface 31. The lead 1A is an example of a first lead of the present disclosure. The lead 1A is also bonded to the bonding portion 6A via a bonding material 81. The bonding material 81 may be any material that can bond the lead 1A to the bonding portion 6A. From the viewpoint of efficiently transferring heat from the lead 1A to the substrate 3, the bonding material 81 is preferably one with higher thermal conductivity, and examples of such materials include silver paste, copper paste, and solder. However, the bonding material 81 may also be an insulating material such as an epoxy resin or a silicone resin. If the bonding portion 6A is not formed on the substrate 3, the lead 1A may be bonded to the substrate 3.

[0146] The configuration of the lead 1A is not particularly limited, and in this embodiment, the lead 1A will be described by dividing it into a first portion 11A, a second portion 12A, a third portion 13A, and a fourth portion 14A.

[0147] As shown in Figures 5, 9 and 10, the first part 11A has a main surface 111A, a back surface 112A, a first surface 121A, a second surface 122A, a third surface 123A, a fourth surface 124Aa, a fifth surface 125Aa, a sixth surface 126Aa, a seventh surface 127Aa, an eighth surface 124Ab, a ninth surface 125Ab, a tenth surface 126Ab and an eleventh surface 127Ab, as well as a plurality of recesses 1111A and grooves 1112A.

[0148] The main surface 111A faces the same side as the first surface 31 in the z direction.

[0149] The back surface 112A is a surface facing the opposite side to the main surface 111A in the z direction, and is a flat surface in the illustrated example. The back surface 112A is joined to the joining portion 6A by a joining material 81, as shown in FIGS.

[0150] The first surface 121A is located between the main surface 111A and the back surface 112A in the z direction, and faces the same side as the third surface 33 in the x direction as a whole. In the illustrated example, the first surface 121A is connected to the main surface 111A and the back surface 112A.

[0151] The second surface 122A is located on the opposite side of the first surface 121A in the x direction and faces the same side in the x direction as the fourth surface 34. The second surface 122A is located between the main surface 111A and the back surface 112A in the z direction and is connected to the main surface 111A and the back surface 112A in the illustrated example. The dimension of the second surface 122A in the y direction is smaller than the dimension of the first surface 121A in the y direction.

[0152] The third surface 123A is located between the first surface 121A and the second surface 122A in the x direction, and faces the same side as the fifth surface 35 in the y direction. The third surface 123A is located between the main surface 111A and the back surface 112A in the z direction, and is connected to the main surface 111A and the back surface 112A in the illustrated example.

[0153] The fourth surface 124Aa and the eighth surface 124Ab are surfaces located on the opposite side of the third surface 123A in the y direction and face the same side as the sixth surface 36 in the y direction. The fourth surface 124Aaa and the eighth surface 124Ab are spaced apart from each other in the x direction. The fourth surface 124A is located between the main surface 111A and the back surface 112A in the z direction and is connected to the main surface 111A and the back surface 112A in the illustrated example. The fourth surface 124Aa and the eighth surface 124Ab are located at approximately the same position in the y direction. Note that being located at approximately the same position in the y direction refers, for example, to being completely identical to each other or having a deviation within ±5% of the representative dimension (the y-direction dimension of the first portion 11A).

[0154] The fifth surface 125Aa and the ninth surface 125Ab are located between the first surface 121A and the second surface 122A in the x direction. The fifth surface 125Aa is connected to the end of the first surface 121A that is closer to the sixth surface 36 in the y direction. The ninth surface 125Ab is connected to the end of the second surface 122A that is closer to the sixth surface 36 in the y direction. The fifth surface 125Aa and the ninth surface 125Ab are inclined with respect to the x direction. The fifth surface 125Aa and the ninth surface 125Ab are located between the main surface 111A and the back surface 112A in the z direction, and in the illustrated example, are connected to the main surface 111A and the back surface 112A.

[0155] The sixth surface 126Aa is located between the fifth surface 125Aa and the fourth surface 124Aa in the x direction, and between the fifth surface 125Aa and the fourth surface 124Aa in the y direction. In the illustrated example, the sixth surface 126Aa is connected to the fourth surface 124Aa and the fifth surface 125Aa.

[0156] The tenth surface 126Ab is located between the ninth surface 125Ab and the eighth surface 124Ab in the x direction, and is located between the ninth surface 125Ab and the eighth surface 124Ab in the y direction. In the illustrated example, the tenth surface 126Ab is connected to the eighth surface 124Ab and the ninth surface 125Ab. The sixth surface 126Aa and the tenth surface 126Ab are aligned along the y direction. The sixth surface 126Aa and the tenth surface 126Ab are located between the main surface 111A and the back surface 112A in the z direction, and in the illustrated example, are connected to the main surface 111A and the back surface 112A. It is connected to 12A.

[0157] The seventh surface 127Aa is located between the first surface 121A and the third surface 123A in the x direction and between the first surface 121A and the third surface 123A in the y direction. The seventh surface 127Aa is connected to the first surface 121A and the third surface 123A. In the illustrated example, the seventh surface 127Aa is a convex curved surface when viewed in the z direction. The seventh surface 127Aa is located between the main surface 111A and the back surface 112A in the z direction and is connected to the main surface 111A and the back surface 112A in the illustrated example. The eleventh surface 127Ab is located between the second surface 122A and the third surface 123A in the x direction and between the second surface 122A and the third surface 123A in the y direction. The eleventh surface 127Ab is connected to the second surface 122A and the third surface 123A. In the illustrated example, the eleventh surface 127Ab is a convex curved surface when viewed in the z direction. The eleventh surface 127Ab is located between the main surface 111A and the back surface 112A in the z direction, and in the illustrated example, is connected to the main surface 111A and the back surface 112A.

[0158] In the illustrated example, the first surface 121A, the second surface 122A, and the third surface 123A have a plurality of protrusions 131A. Each of the plurality of protrusions 131A protrudes outward from the first portion 11A when viewed in the z direction and extends along the z direction. Note that the plurality of protrusions 131A may be formed on portions of the first portion 11A other than the first surface 121A, the second surface 122A, and the third surface 123A. Furthermore, at least one of the first surface 121A, the second surface 122A, and the third surface 123A may not have a plurality of protrusions 131A.

[0159] The recesses 1111A are recessed in the z direction from the main surface 111A. The shape of the recesses 1111A as viewed in the z direction is not particularly limited, and may be, for example, a circle, an ellipse, a rectangle, a triangle, or the like. In the illustrated example, the recesses 1111A are arranged in a matrix.

[0160] The groove 1112A is a portion recessed in the z direction from the main surface 111A. In the illustrated example, the shape of the groove 1112A as viewed in the z direction is not particularly limited. In the illustrated example, the groove 1112A has a rectangular first portion 1112Aa and two second portions 1112Ab extending along the y direction within the rectangular portion. The cross-sectional shape of the groove 1112A is not particularly limited and may be, for example, circular, elliptical, rectangular, triangular, or the like.

[0161] The number of recesses 1111A arranged in the y direction between the groove 1112A and the fourth surface 124Aa and the eighth surface 124Ab is greater than the number of recesses 1111A arranged between the groove 1112A and the third surface 123A.

[0162] The third portion 13A and the fourth portion 14A are covered with the sealing resin 7. The third portion 13A is connected to the first portion 11A and the fourth portion 14A. In the illustrated example, the third portion 13A is connected to a portion of the first portion 11A between the fourth surface 124Aa and the eighth surface 124Ab. Furthermore, when viewed in the z direction, the third portion 13A overlaps with the sixth surface 36. As shown in FIG. 5 , the fourth portion 14A is positioned offset in the z direction from the first portion 11A toward the side toward which the main surface 111A faces. An end of the fourth portion 14A is flush with the sixth surface 76 of the resin 7.

[0163] The second portion 12A is connected to an end of the fourth portion 14A and is a portion of the lead 1A that protrudes from the sealing resin 7. The second portion 12A protrudes on the opposite side of the first portion 11A in the y direction. The second portion 12A is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second portion 12A is bent in the z direction toward the main surface 111A.

[0164] Lead 1B is disposed on substrate 3, and in this embodiment, is disposed on first surface 31. Lead 1B is an example of the first lead of the present disclosure. Lead 1B is also bonded to bonding portion 6B via bonding material 81 described above. If bonding portion 6B is not formed on substrate 3, lead 1B may be bonded to substrate 3.

[0165] The configuration of the lead 1B is not particularly limited, and in this embodiment, as shown in Figures 4 and 14, the lead 1B will be described by dividing it into a first portion 11B, a second portion 12B, a third portion 13B, and a fourth portion 14B.

[0166] As shown in Figures 9 and 14, the first part 11B has a main surface 111B, a back surface 112B, a first surface 121B, a second surface 122B, a third surface 123B, a fourth surface 124B, a fifth surface 125B, a sixth surface 126B, a seventh surface 127B, an eighth surface 128B, a ninth surface 125Bb, a tenth surface 126Bb and an eleventh surface 127Bb, as well as a plurality of recesses 1111B and grooves 1112B.

[0167] The main surface 111B faces the same side as the first surface 31 in the z direction.

[0168] The back surface 112B is a surface facing the opposite side to the main surface 111B in the z direction, and is a flat surface in the illustrated example. The back surface 112B is joined to the joining portion 6B by a joining material 81, as shown in FIG.

[0169] The first surface 121B is located between the main surface 111B and the back surface 112B in the z direction, and faces the same side as the third surface 33 in the x direction as a whole. In the illustrated example, the first surface 121B is connected to the main surface 111B and the back surface 112B. The first surface 121B faces the second surface 122A.

[0170] The second surface 122B is located on the opposite side of the first surface 121B in the x direction and faces the same side in the x direction as the fourth surface 34. The second surface 122B is located between the main surface 111B and the back surface 112B in the z direction and is connected to the main surface 111B and the back surface 112B in the illustrated example. The dimension of the second surface 122B in the y direction is smaller than the dimension of the first surface 121B in the y direction.

[0171] The third surface 123B is located between the first surface 121B and the second surface 122B in the x direction, and faces the same side as the fifth surface 35 in the y direction. The third surface 123B is located between the main surface 111B and the back surface 112B in the z direction, and is connected to the main surface 111B and the back surface 112B in the illustrated example.

[0172] The fourth surface 124B is located on the opposite side of the third surface 123B in the y direction and faces the same side as the sixth surface 36 in the y direction. The fourth surface 124B is located between the main surface 111B and the back surface 112B in the z direction and is connected to the main surface 111B and the back surface 112B in the illustrated example. In the illustrated example, the fourth surface 124B overlaps with the third surface 123B when viewed in the y direction.

[0173] The fifth surface 125Ba is connected to the end of the first surface 121B on the side of the sixth surface 36 in the y direction. The fifth surface 125Ba faces the ninth surface 125Ab. The fifth surface 125Ba is inclined with respect to the x and y directions. The fifth surface 125Ba is spaced apart from the third surface 123B when viewed in the y direction. The fifth surface 125Ba is located between the main surface 111B and the back surface 112B in the z direction, and is connected to the main surface 111B and the back surface 112B in the illustrated example. The ninth surface 125Bb is connected to the end of the second surface 122Bb on the side of the sixth surface 36 in the y direction. The ninth surface 125Bb is inclined with respect to the x and y directions. The ninth surface 125Bb overlaps with the third surface 123Bb when viewed in the y direction. The ninth surface 12 The 5Bb is located between the main surface 111Bb and the back surface 112Bb in the z direction, and in the example shown, is connected to the main surface 111Bb and the back surface 112Bb.

[0174] The sixth surface 126Ba is a surface along the y direction. In the illustrated example, the sixth surface 126Ba is connected to the fifth surface 125Ba. The sixth surface 126Ba is located between the main surface 111B and the back surface 112B in the z direction, and in the illustrated example, is connected to the main surface 111B and the back surface 112B. The tenth surface 126Bb is a surface along the y direction. In the illustrated example, the tenth surface 126Bb is connected to the fourth surface 124B. The tenth surface 126Bb is located between the main surface 111B and the back surface 112B in the z direction, and in the illustrated example, is connected to the main surface 111B and the back surface 112B.

[0175] The seventh surface 127Ba is located between the first surface 121B and the third surface 123B in the x direction and between the first surface 121B and the second surface 122B in the y direction. The seventh surface 127Ba is connected to the first surface 121B and the third surface 123B. In the illustrated example, the seventh surface 127Ba is a convex curved surface when viewed in the z direction. The seventh surface 127Ba is located between the main surface 111B and the back surface 112B in the z direction and is connected to the main surface 111B and the back surface 112B in the illustrated example. The eleventh surface 127Bb is located between the second surface 122B and the third surface 123B in the x direction and is located between the second surface 122B and the third surface 123B in the y direction. The eleventh surface 127Bb is connected to the second surface 122B and the third surface 123B. In the illustrated example, the eleventh surface 127Bb is a convex curved surface when viewed in the z direction. The eleventh surface 127Bb is located between the principal surface 111B and the rear surface 112B in the z direction, and in the illustrated example, is connected to the principal surface 111B and the rear surface 112B.

[0176] The eighth surface 128B is located between the tenth surface 126Bb and the ninth surface 125Bb in the x and y directions and is connected to the tenth surface 126Bb and the ninth surface 125Bb. In the illustrated example, the eighth surface 128B is aligned along the x direction. The eighth surface 128B is located between the main surface 111B and the back surface 112B in the z direction and is connected to the main surface 111B and the back surface 112B in the illustrated example.

[0177] In the illustrated example, the first surface 121B, the second surface 122B, and the third surface 123B have a plurality of protrusions 131B. Each of the plurality of protrusions 131B protrudes outward from the first portion 11B when viewed in the z direction and extends along the z direction. Note that the plurality of protrusions 131B may be formed on portions of the first portion 11B other than the first surface 121B, the second surface 122B, and the third surface 123B. Furthermore, at least one of the first surface 121B, the second surface 122B, and the third surface 123B may not have a plurality of protrusions 131B.

[0178] The plurality of recesses 1111B are recessed in the z direction from the main surface 111B. The shape of the recesses 1111B as viewed in the z direction is not particularly limited, and may be, for example, a circle, an ellipse, a rectangle, a triangle, or the like. In the illustrated example, the plurality of recesses 1111B are arranged in a matrix.

[0179] The grooves 1112B are recessed from the main surface 111B in the z direction. In the illustrated example, the shape of the grooves 1112B as viewed in the z direction is not particularly limited, and in the illustrated example, they are rectangular. The cross-sectional shape of the grooves 1112B is not particularly limited, and may be, for example, circular, elliptical, rectangular, triangular, or the like.

[0180] The number of recesses 1111B arranged in the y direction between groove 1112B and fourth surface 124B is greater than the number of recesses 1111B arranged between groove 1112B and third surface 123B.

[0181] The third portion 13B and the fourth portion 14B are covered with the sealing resin 7. The third portion 13B is connected to the first portion 11B and the fourth portion 14B. In the example shown, the third portion 13B is connected to a portion of the first portion 11B that is adjacent to the fourth surface 124B. Furthermore, the third portion 13B overlaps with the sixth surface 36 when viewed in the z direction. Similar to the fourth portion 14A of the lead 1A, the fourth portion 14B is positioned offset in the z direction from the first portion 11B toward the side toward which the main surface 111B faces. An end of the fourth portion 14B is flush with the sixth surface 76 of the resin 7.

[0182] The second portion 12B is connected to an end of the fourth portion 14B and is a portion of the lead 1B that protrudes from the sealing resin 7. The second portion 12B protrudes on the opposite side of the first portion 11B in the y direction. The second portion 12B is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second portion 12B is bent in the z direction toward the side facing the main surface 111B.

[0183] The lead 1C is disposed on the substrate 3, and in this embodiment, is disposed on the first surface 31. The lead 1C is an example of the first lead of the present disclosure. The lead 1C is also bonded to the bonding portion 6C via the above-mentioned bonding material 81. If the bonding portion 6C is not formed on the substrate 3, the lead 1C may be bonded to the substrate 3.

[0184] The configuration of the lead 1C is not particularly limited, and in this embodiment, as shown in Figures 4 and 14, the lead 1C will be described by dividing it into a first portion 11C, a second portion 12C, a third portion 13C, and a fourth portion 14C.

[0185] As shown in Figures 9 and 14, the first portion 11C has a main surface 111C, a back surface 112C, a first surface 121C, a second surface 122C, a third surface 123C, a fourth surface 124C, a fifth surface 125Ca, a sixth surface 126Ca, a seventh surface 127Ca, an eighth surface 128C, a ninth surface 125Cb, a tenth surface 126Cb and an eleventh surface 127Cb, as well as a plurality of recesses 1111C and grooves 1112C.

[0186] The main surface 111C faces the same side as the first surface 31 in the z direction.

[0187] The back surface 112C is a surface facing the opposite side to the main surface 111C in the z direction, and is a flat surface in the illustrated example. The back surface 112C is joined to the joining portion 6C by a joining material 81, as shown in FIG.

[0188] The first surface 121C is located between the main surface 111C and the back surface 112C in the z direction, and faces the same side as the third surface 33 in the x direction as a whole. In the illustrated example, the first surface 121C is connected to the main surface 111C and the back surface 112C. The first surface 121C faces the second surface 122B.

[0189] The second surface 122C is located on the opposite side of the first surface 121C in the x direction and faces the same side in the x direction as the fourth surface 34. The second surface 122C is located between the main surface 111C and the back surface 112C in the z direction and is connected to the main surface 111C and the back surface 112C in the illustrated example. The dimension of the second surface 122C in the y direction is smaller than the dimension of the first surface 121C in the y direction.

[0190] The third surface 123C is located between the first surface 121C and the second surface 122C in the x direction, and faces the same side as the fifth surface 35 in the y direction. The third surface 123C is located between the main surface 111C and the back surface 112C in the z direction, and is connected to the main surface 111C and the back surface 112C in the illustrated example.

[0191] The fourth surface 124C is located on the opposite side of the third surface 123C in the y direction and faces the same side as the sixth surface 36 in the y direction. The fourth surface 124C is located between the main surface 111C and the back surface 112C in the z direction and is connected to the main surface 111C and the back surface 112C in the illustrated example. In the illustrated example, the fourth surface 124C overlaps with the third surface 123C when viewed in the y direction.

[0192] The fifth surface 125Ca is connected to the end of the first surface 121C on the side of the sixth surface 36 in the y direction. The fifth surface 125Ca faces the ninth surface 125Bb. The fifth surface 125Ca is inclined with respect to the x and y directions. The fifth surface 125Ca is spaced apart from the third surface 123C when viewed in the y direction. The fifth surface 125Ca is located between the main surface 111C and the back surface 112C in the z direction, and in the illustrated example, is connected to the main surface 111C and the back surface 112C. The ninth surface 125Cb is connected to the end of the second surface 122C on the side of the sixth surface 36 in the y direction. The ninth surface 125Cb is inclined with respect to the x and y directions. The ninth surface 125Cb overlaps with the third surface 123C when viewed in the y direction. The ninth surface 125Cb is located between the main surface 111C and the back surface 112C in the z direction, and in the example shown, is connected to the main surface 111C and the back surface 112C.

[0193] The sixth surface 126Ca is located on the opposite side of the fifth surface 125Ca from the third surface 123C in the y direction. In the illustrated example, the sixth surface 126Ca faces the tenth surface 126Bb. The sixth surface 126Ca is aligned along the y direction. The sixth surface 126Ca is located between the main surface 111C and the back surface 112C in the z direction, and in the illustrated example, is connected to the main surface 111C and the back surface 112C. The tenth surface 126Cb is located on the opposite side of the ninth surface 125Cb from the third surface 123C in the y direction. In the illustrated example, the tenth surface 126Cb is connected to the fourth surface 124C and the ninth surface 125Cb. The tenth surface 126Cb is aligned along the y direction. The tenth surface 126Cb is located between the main surface 111C and the back surface 112C in the z direction, and in the example shown, is connected to the main surface 111C and the back surface 112C.

[0194] The seventh surface 127Ca is located between the first surface 121C and the third surface 123C in the x direction and between the first surface 121C and the third surface 123C in the y direction. The seventh surface 127Ca is connected to the first surface 121C and the third surface 123C. In the illustrated example, the seventh surface 127Ca is a convex curved surface when viewed in the z direction. The seventh surface 127Ca is located between the main surface 111C and the back surface 112C in the z direction and is connected to the main surface 111C and the back surface 112C in the illustrated example. The eleventh surface 127Cb is located between the second surface 122C and the third surface 123C in the x direction and between the second surface 122C and the third surface 123C in the y direction. The eleventh surface 127Cb is connected to the second surface 122C and the third surface 123C. In the illustrated example, the eleventh surface 127Cb is a convex curved surface when viewed in the z direction. The eleventh surface 127Cb is located between the main surface 111C and the back surface 112C in the z direction, and in the illustrated example, is connected to the main surface 111C and the back surface 112C.

[0195] The eighth surface 128C is located between the fifth surface 125Ca and the sixth surface 126Ca in the x and y directions and is connected to the fifth surface 125Ca and the sixth surface 126Ca. In the example shown, the eighth surface 128C is along the x direction and faces the eighth surface 128B. The eighth surface 128C is located between the main surface 111C and the back surface 112C in the z direction and is connected to the main surface 111C and the back surface 112C in the example shown.

[0196] In the illustrated example, the first surface 121C, the second surface 122C, and the third surface 123C have a plurality of protrusions 131C. Each of the plurality of protrusions 131C has a first protrusion 131C as viewed in the z direction. The protrusions 131C protrude outward from the first portion 11C and extend along the z direction. Note that the plurality of protrusions 131C may be formed on portions of the first portion 11C other than the first surface 121C, the second surface 122C, and the third surface 123C. Alternatively, at least one of the first surface 121C, the second surface 122C, and the third surface 123C may not have the plurality of protrusions 131C.

[0197] The plurality of recesses 1111C are recessed in the z direction from the main surface 111C. The shape of the recesses 1111C as viewed in the z direction is not particularly limited, and may be, for example, a circle, an ellipse, a rectangle, a triangle, etc. In the illustrated example, the plurality of recesses 1111C are arranged in a matrix.

[0198] The grooves 1112C are recessed from the main surface 111C in the z direction. In the illustrated example, the shape of the grooves 1112C as viewed in the z direction is not particularly limited, and in the illustrated example, they are rectangular. The cross-sectional shape of the grooves 1112C is not particularly limited, and may be, for example, circular, elliptical, rectangular, triangular, or the like.

[0199] The number of recesses 1111C arranged in the y direction between the groove 1112C and the fourth surface 124C is greater than the number of recesses 1111C arranged between the groove 1112C and the third surface 123C.

[0200] The third portion 13C and the fourth portion 14C are covered with the sealing resin 7. The third portion 13C is connected to the first portion 11C and the fourth portion 14C. In the illustrated example, the third portion 13C is connected to a portion of the first portion 11C adjacent to the fourth surface 124C. Furthermore, when viewed in the z direction, the third portion 13C overlaps with the sixth surface 36. Similar to the fourth portion 14A of the lead 1A, the fourth portion 14C is shifted in the z direction from the first portion 11C toward the side toward which the main surface 111C faces, and is connected to the second portion 12C. An end of the fourth portion 14C is flush with the sixth surface 76 of the resin 7.

[0201] The second portion 12C is a connection to the end of the fourth portion 14C and is a portion of the lead 1C that protrudes from the sealing resin 7. The second portion 12C protrudes on the opposite side of the first portion 11C in the y direction. The second portion 12C is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second portion 12C is bent in the z direction toward the main surface 111C.

[0202] The lead 1D is disposed on the substrate 3, and in this embodiment, is disposed on the first surface 31. The lead 1D is an example of the first lead of the present disclosure. The lead 1D is also bonded to the bonding portion 6D via the above-mentioned bonding material 81. If the bonding portion 6D is not formed on the substrate 3, the lead 1D may be bonded to the substrate 3.

[0203] The configuration of the lead 1D is not particularly limited, and in this embodiment, as shown in Figures 4 and 14, the lead 1D will be described by dividing it into a first portion 11D, a second portion 12D, a third portion 13D, and a fourth portion 14D.

[0204] As shown in Figures 9 and 14, the first part 11D has a main surface 111D, a back surface 112D, a first surface 121D, a second surface 122D, a third surface 123D, a fourth surface 124D, a fifth surface 125Da, a sixth surface 126D, a seventh surface 127Da, an eighth surface 125Da and a ninth surface 127Da, as well as a plurality of recesses 1111D and grooves 1112D.

[0205] The main surface 111D faces the same side as the first surface 31 in the z direction.

[0206] The back surface 112D is a surface facing the opposite side to the main surface 111D in the z direction, and is In this example, the rear surface 112D is a flat surface. The rear surface 112D is joined to the joining portion 6D by a joining material 81, as shown in FIG.

[0207] The first surface 121D is located between the main surface 111D and the back surface 112D in the z direction, and faces the same side as the third surface 33 in the x direction as a whole. In the example shown, the first surface 121D is connected to the main surface 111D and the back surface 112D. The first surface 121D faces the second surface 122C.

[0208] The second surface 122D is located on the opposite side of the first surface 121D in the x direction and faces the same side in the x direction as the fourth surface 34. The second surface 122D is located between the main surface 111D and the back surface 112D in the z direction and is connected to the main surface 111D and the back surface 112D in the illustrated example. The dimension in the y direction of the second surface 122D is greater than the dimension in the y direction of the first surface 121D.

[0209] The third surface 123D is located between the first surface 121D and the second surface 122D in the x direction, and faces the same side as the fifth surface 35 in the y direction. The third surface 123D is located between the main surface 111D and the back surface 112D in the z direction, and is connected to the main surface 111D and the back surface 112D in the illustrated example.

[0210] The fourth surface 124D is located on the opposite side of the third surface 123D in the y direction and faces the same side as the sixth surface 36 in the y direction. The fourth surface 124D is located between the main surface 111D and the back surface 112D in the z direction and is connected to the main surface 111D and the back surface 112D in the illustrated example. In the illustrated example, the fourth surface 124D overlaps with the third surface 123D when viewed in the y direction.

[0211] The fifth surface 125Da is connected to the end of the first surface 121D on the side of the sixth surface 36 in the y direction. The fifth surface 125Da faces the ninth surface 125Cb. The fifth surface 125Da is inclined with respect to the x and y directions. The fifth surface 125Da is spaced apart from the third surface 123D when viewed in the y direction. The fifth surface 125Da is located between the main surface 111D and the rear surface 112D in the z direction, and in the illustrated example, is connected to the main surface 111D and the rear surface 112D. The eighth surface 125Db is connected to the end of the second surface 122D on the side of the sixth surface 36 in the y direction. The eighth surface 125Db is inclined with respect to the x and y directions. The eighth surface 125Db overlaps with the third surface 123D when viewed in the y direction. The eighth surface 125Db is located between the main surface 111D and the back surface 112D in the z direction, and in the example shown, is connected to the main surface 111D and the back surface 112D.

[0212] The sixth surface 126D is located on the opposite side of the fifth surface 125Da from the third surface 123D in the y direction. In the example shown, the sixth surface 126D faces the sixth surface 126C. The sixth surface 126D is connected to the fifth surface 125Da. The sixth surface 126D is aligned in the y direction. The sixth surface 126D is located between the main surface 111D and the back surface 112D in the z direction, and in the example shown, is connected to the main surface 111D and the back surface 112D.

[0213] The seventh surface 127Da is located between the first surface 121D and the third surface 123D in the x direction, and is located between the first surface 121D and the third surface 123D in the y direction. The seventh surface 127Da is connected to the first surface 121D and the third surface 123D. In the example shown, the seventh surface 127Da is a convex curved surface when viewed in the z direction. The seventh surface 127Da is located between the main surface 111D and the back surface 112D in the z direction, and is connected to the main surface 111D and the back surface 112D in the example shown. The ninth surface 127Db is located between the second surface 122D and the third surface 123D in the x direction, and is connected to the second surface 122D in the y direction. and the third surface 123D. The ninth surface 127Db is connected to the second surface 122D and the third surface 123D. In the example shown, the ninth surface 127Db is a convex curved surface when viewed in the z direction. The ninth surface 127Db is located between the main surface 111D and the back surface 112D in the z direction, and in the example shown, is connected to the main surface 111D and the back surface 112D.

[0214] In the illustrated example, the first surface 121D, the second surface 122D, and the third surface 123D have a plurality of protrusions 131D. Each of the plurality of protrusions 131D protrudes outward from the first portion 11D when viewed in the z direction and extends along the z direction. Note that the plurality of protrusions 131D may be formed on portions of the first portion 11D other than the first surface 121D, the second surface 122D, and the third surface 123D. Furthermore, at least one of the first surface 121D, the second surface 122D, and the third surface 123D may not have a plurality of protrusions 131D.

[0215] The plurality of recesses 1111D are recessed in the z direction from the main surface 111D. The shape of the recesses 1111D as viewed in the z direction is not particularly limited, and may be, for example, a circle, an ellipse, a rectangle, a triangle, or the like. In the illustrated example, the plurality of recesses 1111D are arranged in a matrix.

[0216] The grooves 1112D are recessed from the main surface 111D in the z direction. In the illustrated example, the shape of the grooves 1112D as viewed in the z direction is not particularly limited, and in the illustrated example, they are rectangular. The cross-sectional shape of the grooves 1112D is not particularly limited, and may be, for example, circular, elliptical, rectangular, triangular, or the like.

[0217] The number of recesses 1111D arranged in the y direction between the grooves 1112D and the fourth surface 124D is greater than the number of recesses 1111D arranged between the grooves 1112D and the third surface 123D.

[0218] The third portion 13D and the fourth portion 14D are connected to the first portion 11D and the fourth portion 14D. In the illustrated example, the third portion 13D is connected to a portion of the first portion 11D adjacent to the fourth surface 124D. Furthermore, when viewed in the z direction, the third portion 13D overlaps with the sixth surface 36. The fourth portion 14D is covered with the sealing resin 7. Similar to the fourth portion 14A of the lead 1A, the fourth portion 14D is shifted in the z direction from the first portion 11D toward the side facing the main surface 111D, and is connected to the second portion 12D. An end of the fourth portion 14D is flush with the sixth surface 76 of the resin 7.

[0219] The second portion 12D is connected to an end of the fourth portion 14D and is a portion of the lead 1D that protrudes from the sealing resin 7. The second portion 12D protrudes on the opposite side of the first portion 11D in the y direction. The second portion 12D is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second portion 12D is bent in the z direction toward the main surface 111D.

[0220] When viewed in the z direction, the lead 1E is spaced apart from the substrate 3. In this embodiment, the lead 1E is arranged on the side toward which the sixth surface 36 faces relative to the substrate 3 in the y direction.

[0221] The configuration of the lead 1E is not particularly limited, and in this embodiment, as shown in FIG. 4, the lead 1E will be described as being divided into a second portion 12E and a fourth portion 14E.

[0222] The fourth portion 14E is covered with the sealing resin 7. Similar to the fourth portion 14D of the lead 1D, the fourth portion 14E is positioned shifted in the z direction relative to the first portion 11D toward the side toward which the main surface 111D faces. The fourth portion 14E overlaps with the first portion 11D when viewed in the y direction. The end of the fourth portion 14E is flush with the sixth surface 76 of the resin 7.

[0223] The second portion 12E is connected to an end of the fourth portion 14E and is a portion of the lead 1E that protrudes from the sealing resin 7. The second portion 12E protrudes on the opposite side of the fourth portion 14E in the y direction. The second portion 12E is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second portion 12E is bent in the z direction toward the side where the first surface 31 faces.

[0224] The lead 1F is spaced apart from the substrate 3 when viewed in the z direction. In this embodiment, the lead 1F is arranged closer to the sixth surface 36 than the substrate 3 in the y direction. The lead 1F is also arranged on the opposite side of the lead 1E from the fourth portion 14D in the x direction.

[0225] The configuration of the lead 1F is not particularly limited, and in this embodiment, as shown in FIG. 4, the lead 1F will be described as being divided into a second portion 12F and a fourth portion 14F.

[0226] The fourth portion 14F is covered with the sealing resin 7. Similar to the fourth portion 14D of the lead 1D, the fourth portion 14F is positioned shifted in the z direction from the first portion 11D toward the side facing the main surface 111D. The fourth portion 14F overlaps with the first portion 11D when viewed in the y direction. An end portion of the fourth portion 14F is flush with the sixth surface 76 of the resin 7.

[0227] The second portion 12F is connected to an end of the fourth portion 14F and is a portion of the lead 1F that protrudes from the sealing resin 7. The second portion 12F protrudes on the opposite side of the fourth portion 14F in the y direction. The second portion 12F is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second portion 12F is bent in the z direction toward the side facing the first surface 31.

[0228] The lead 1G is spaced apart from the substrate 3 when viewed in the z direction. In this embodiment, the lead 1G is arranged closer to the fourth surface 34 than the substrate 3 in the x direction. The lead 1G is also arranged on the opposite side of the lead 1E from the fourth portion 14D in the x direction.

[0229] The configuration of the lead 1G is not particularly limited, and in this embodiment, as shown in FIG. 4, the lead 1G will be described as being divided into a second portion 12G and a fourth portion 14G.

[0230] The fourth portion 14G is covered with the sealing resin 7. Similar to the fourth portion 14D of the lead 1D, the fourth portion 14G is shifted in the z direction from the first portion 11D toward the side toward which the main surface 111D faces. The fourth portion 14G overlaps with the fourth portion 14F when viewed in the y direction. An end portion of the fourth portion 14G is flush with the sixth surface 76 of the resin 7.

[0231] The second portion 12G is connected to an end of the fourth portion 14G and is a portion of the lead 1G that protrudes from the sealing resin 7. The second portion 12G protrudes on the opposite side of the fourth portion 14G in the y direction. The second portion 12G is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second portion 12G is bent in the z direction toward the side facing the first surface 31.

[0232] Lead 1Z is spaced apart from substrate 3 when viewed in the z direction. In this embodiment, lead 1Z is arranged closer to third surface 33 than substrate 3 in the x direction. Lead 1Z is also arranged on the opposite side of lead 1A to lead 1B in the x direction.

[0233] The configuration of the lead 1Z is not particularly limited, and in this embodiment, the lead 1Z will be described as being divided into a second portion 12Z and a fourth portion 14Z, as shown in Fig. 4. In this embodiment, the lead 1Z is insulated from the circuit of the semiconductor device A1.

[0234] The fourth portion 14Z is covered with the sealing resin 7. Similar to the fourth portion 14D of the lead 1D, the fourth portion 14Z is positioned shifted in the z direction toward the main surface 111D relative to the first portion 11D. The shape of the fourth portion 14Z is not particularly limited, and in the illustrated example, it is a strip extending in the y direction. An end of the fourth portion 14Z is flush with the sixth surface 76 of the resin 7.

[0235] The second portion 12Z is ​​connected to an end of the fourth portion 14Z and is a portion of the lead 1Z that protrudes from the sealing resin 7. The second portion 12Z protrudes on the opposite side of the fourth portion 14Z in the y direction. The second portion 12Z is ​​used, for example, when mounting the semiconductor device A1 on an external circuit board. In the illustrated example, the second portion 12Z is ​​bent in the z direction toward the side facing the first surface 31.

[0236] As shown in FIG. 4, the second portions 12A, 12B, 12C, and 12D are spaced apart by a distance G11 in the x direction. These distances G11 are approximately the same length, with a difference within ±5%. The second portions 12D and 12E are spaced apart by a distance G12 in the x direction. The distance G12 is approximately the same length as the distance G11, with a difference within ±5%. The second portions 12E, 12F, and 12G are spaced apart by a distance G13 in the x direction. The length of the distance G13 is shorter than the distance G11, with a difference within ±5%. The second portions 12A and 12Z are spaced apart by a distance G14 in the x direction. The distance G14 is larger than the distance G11.

[0237] <Lead 2> The leads 2 are made of a material containing metal and have, for example, better heat dissipation characteristics than the substrate 3. The metal constituting the leads 2 is not particularly limited, and examples thereof include copper (Cu), aluminum, iron (Fe), oxygen-free copper, or alloys thereof (e.g., Cu-Sn alloy, Cu-Zr alloy, Cu-Fe alloy, etc.). The leads 2 may also be plated with nickel (Ni). The leads 2 may be formed, for example, by pressing a mold against a metal plate, or by patterning a metal plate by etching, but are not limited to these. The thickness of the leads 2 is not particularly limited, and is, for example, approximately 0.4 mm to 0.8 mm. The leads 2 are arranged so as to overlap the second region 30B of the substrate 3 when viewed in the z direction.

[0238] In this embodiment, the leads 2 include leads 2A to 2P and 2Z as shown in Figures 1 to 4. The leads 2A to 2O form conduction paths to, for example, control chips 4G and 4H.

[0239] The lead 2A is spaced apart from the multiple leads 1. The lead 2A is disposed on the conductive portion 5. The lead 2A is electrically connected to the conductive portion 5. The lead 2A is an example of a second lead of the present disclosure. The lead 2A is also joined to the second portion 52A of the wiring portion 50A of the conductive portion 5 via a conductive bonding material 82. The conductive bonding material 82 may be any material that can join and electrically connect the lead 2A to the second portion 52A. The conductive bonding material 82 may be, for example, silver paste, copper paste, solder, or the like. The conductive bonding material 82 corresponds to the first conductive bonding material of the present disclosure.

[0240] The configuration of the lead 2A is not particularly limited. In this embodiment, as shown in FIG. The code 2A will be explained by dividing it into a first section 21A, a second section 22A, a third section 23A, and a fourth section 24A.

[0241] The first portion 21A is a portion joined to the second portion 52A of the wiring portion 50A. The shape of the first portion 21A is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the first portion 21A is rectangular and has an elongated rectangular shape with the y direction as the longitudinal direction. In the illustrated example, the first portion 21A overlaps with the second portion 52A when viewed in the z direction. The first portion 21A also has a through hole 211A. The through hole 211A penetrates the first portion 21A in the z direction. Similar to the through hole 211C of the first portion 21C of the lead 2C shown in FIG. 5, the through hole 211A is filled with a conductive bonding material 82. The conductive bonding material 82 is formed over the entire surface of the lead 2A. However, the conductive bonding material 82 may remain within the through hole 211A and not reach the surface of the lead 2A.

[0242] The third portion 23A and the fourth portion 24A are covered with the sealing resin 7. The third portion 23A is connected to the first portion 21A and the fourth portion 24A. Similar to the third portion 23C and the fourth portion 24C of the lead 2C shown in FIG. 5, the fourth portion 24A is shifted in the z direction toward the first surface 31 relative to the first portion 21A. An end of the fourth portion 24A is flush with the sixth surface 75 of the resin 7. In the illustrated example, the third portion 23A and the fourth portion 24A are substantially aligned when viewed in the y direction. Note that "substantially aligned when viewed in the y direction" refers to, for example, whether they are completely aligned with each other or have a deviation within ±5% of their representative dimensions (the x-direction dimensions of the third portion 23A and the fourth portion 24A). Furthermore, the third portion 23A and the fourth portion 24A are shifted in the x direction toward the third surface 33 relative to the center of the first portion 21A in the x direction. The third portion 23A overlaps with the fifth surface 35 of the substrate 3 when viewed in the z direction.

[0243] The second portion 22A is connected to an end of the fourth portion 24A and is a portion of the lead 2A that protrudes from the sealing resin 7 on the side opposite the leads 1 as viewed in the y direction. The second portion 22A protrudes on the side opposite the first portion 21A in the y direction. The second portion 22A is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second portion 22A is bent in the z direction toward the side toward which the first surface 31 faces. The second portion 22A, the third portion 23A, and the fourth portion 24A each have sides along the y direction on both sides in the x direction.

[0244] The lead 2B is spaced apart from the multiple leads 1. The lead 2B is disposed on the conductive portion 5. The lead 2B is electrically connected to the conductive portion 5. The lead 2B is an example of the second lead of the present disclosure. Furthermore, the lead 2B is joined to the second portion 52B of the wiring portion 50B of the conductive portion 5 via the conductive bonding material 82 described above.

[0245] The configuration of the lead 2B is not particularly limited, and in this embodiment, as shown in FIG. 15, the lead 2B will be described by dividing it into a first portion 21B, a second portion 22B, a third portion 23B, and a fourth portion 24B.

[0246] The first portion 21B is a portion joined to the second portion 52B of the wiring portion 50B. The shape of the first portion 21B is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the first portion 21B is rectangular, and is an elongated rectangle with the y direction as the longitudinal direction. In the illustrated example, the first portion 21B overlaps with the second portion 52B when viewed in the z direction. The first portion 21B also has a through-hole 211B. The through-hole 211B penetrates the first portion 21B in the z direction. Similar to the through-hole 211C of the first portion 21C of the lead 2C shown in FIG. 5, the through-hole 211B is filled with a conductive bonding material 82. The conductive bonding material 82 is formed over the surface of the lead 2B. However, the conductive bonding material 82 remains within the through-hole 211B and does not reach the surface of the lead 2B. That's fine.

[0247] The third portion 23B and the fourth portion 24B are covered with the sealing resin 7. The third portion 23B is connected to the first portion 21B and the fourth portion 24B. Similar to the third portion 23C and the fourth portion 24C of the lead 2C shown in FIG. 5, the fourth portion 24B is shifted in the z direction toward the first surface 31 relative to the first portion 21B. An end of the fourth portion 24B is flush with the sixth surface 75 of the resin 7. In the illustrated example, the first portion 21B, the third portion 23B, and the fourth portion 24B are substantially aligned when viewed in the y direction. Note that "substantially aligned when viewed in the y direction" refers to, for example, whether they completely match each other or whether there is a deviation within ±5% of the representative dimension (the x-direction dimension of the first portion 21B, the third portion 23B, and the fourth portion 24B). The third portion 23B overlaps the fifth surface 35 of the substrate 3 when viewed in the z direction.

[0248] The second portion 22B is connected to an end of the fourth portion 24B and is a portion of the lead 2B that protrudes from the sealing resin 7 toward the opposite side of the leads 1 in the y direction. The second portion 22B protrudes toward the opposite side of the first portion 21B in the y direction. The second portion 22B is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second portion 22B is bent in the z direction toward the first surface 31. The second portion 22B, the third portion 23B, and the fourth portion 24B have sides extending along the y direction on both sides in the x direction. The sides of the second portion 22B, the third portion 23B, and the fourth portion 24B that are located toward the third surface 33 in the x direction face the sides of the second portion 22A, the third portion 23A, and the fourth portion 24A that are located toward the fourth surface 34 in the x direction.

[0249] The lead 2C is spaced apart from the multiple leads 1. The lead 2C is disposed on the conductive portion 5. The lead 2C is electrically connected to the conductive portion 5. The lead 2C is an example of the second lead of the present disclosure. Furthermore, the lead 2C is joined to the second portion 52C of the wiring portion 50C of the conductive portion 5 via the conductive bonding material 82 described above.

[0250] The configuration of the lead 2C is not particularly limited, and in this embodiment, as shown in FIG. 15, the lead 2C will be described by dividing it into a first portion 21C, a second portion 22C, a third portion 23C, and a fourth portion 24C.

[0251] The first portion 21C is a portion joined to the second portion 52C of the wiring portion 50C. The shape of the first portion 21C is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the first portion 21C is rectangular and has an elongated rectangular shape with the y direction as the longitudinal direction. In the illustrated example, the first portion 21C overlaps with the second portion 52C when viewed in the z direction. The first portion 21C also has a through hole 211C. The through hole 211C penetrates the first portion 21C in the z direction. As shown in FIG. 5, the through hole 211C is filled with a conductive bonding material 82. The conductive bonding material 82 is formed over the surface of the lead 2C. However, the conductive bonding material 82 may remain within the through hole 211C and not reach the surface of the lead 2C.

[0252] The third portion 23C and the fourth portion 24C are covered with the sealing resin 7. The third portion 23C is connected to the first portion 21C and the fourth portion 24C. As shown in FIG. 5, the fourth portion 24C is shifted in the z direction toward the first surface 31 relative to the first portion 21C. An end of the fourth portion 24C is flush with the sixth surface 75 of the resin 7. In the illustrated example, the first portion 21C, the third portion 23C, and the fourth portion 24C are substantially aligned when viewed in the y direction. Note that "substantially aligned when viewed in the y direction" refers to, for example, whether they completely match each other or whether there is a deviation within ±5% of their representative dimensions (the x-direction dimensions of the first portion 21C, the third portion 23C, and the fourth portion 24C). The third portion 23C overlaps the fifth surface 35 of the substrate 3 when viewed in the z direction.

[0253] The second portion 22C is connected to an end of the fourth portion 24C and is a portion of the lead 2C that protrudes from the sealing resin 7 toward the opposite side of the leads 1 in the y direction. The second portion 22C protrudes toward the opposite side of the first portion 21C in the y direction. The second portion 22C is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second portion 22C is bent in the z direction toward the first surface 31. The second portion 22C, the third portion 23C, and the fourth portion 24C have sides extending along the y direction on both sides in the x direction. The sides of the second portion 22C, the third portion 23C, and the fourth portion 24C that are located toward the third surface 33 in the x direction face the sides of the second portion 22B, the third portion 23B, and the fourth portion 24B that are located toward the fourth surface 34 in the x direction.

[0254] The lead 2D is spaced apart from the multiple leads 1. The lead 2D is disposed on the conductive portion 5. The lead 2D is electrically connected to the conductive portion 5. The lead 2D is an example of the second lead of the present disclosure. Furthermore, the lead 2D is joined to the second portion 52D of the wiring portion 50D of the conductive portion 5 via the conductive bonding material 82 described above.

[0255] The configuration of the lead 2D is not particularly limited, and in this embodiment, as shown in FIG. 15, the lead 2D will be described by dividing it into a first portion 21D, a second portion 22D, a third portion 23D, and a fourth portion 24D.

[0256] The first portion 21D is a portion joined to the second portion 52D of the wiring portion 50D. The shape of the first portion 21D is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the first portion 21D is rectangular and has an elongated rectangular shape with the y direction as the longitudinal direction. In the illustrated example, the first portion 21D overlaps with the second portion 52D when viewed in the z direction. The first portion 21D also has a through hole 211D. The through hole 211D penetrates the first portion 21D in the z direction. Similar to the through hole 211C of the first portion 21C of the lead 2C shown in FIG. 5, the through hole 211D is filled with a conductive bonding material 82. The conductive bonding material 82 is formed over the entire surface of the lead 2D. However, the conductive bonding material 82 may remain within the through hole 211D and not reach the surface of the lead 2D.

[0257] The third portion 23D and the fourth portion 24D are covered with the sealing resin 7. The third portion 23D is connected to the first portion 21D and the fourth portion 24D. Similar to the third portion 23C and the fourth portion 24C of the lead 2C shown in FIG. 5, the fourth portion 24D is shifted in the z direction toward the first surface 31 relative to the first portion 21D. An end of the fourth portion 24D is flush with the sixth surface 75 of the resin 7. In the illustrated example, the first portion 21D, the third portion 23D, and the fourth portion 24D are substantially aligned when viewed in the y direction. Note that "substantially aligned when viewed in the y direction" refers to, for example, whether they completely match each other or whether there is a deviation within ±5% of the representative dimension (the x-direction dimension of the first portion 21D, the third portion 23D, and the fourth portion 24D). The third portion 23D overlaps the fifth surface 35 of the substrate 3 when viewed in the z direction.

[0258] The second portion 22D is connected to an end of the fourth portion 24D and is a portion of the lead 2D that protrudes from the sealing resin 7 toward the opposite side of the leads 1 in the y direction. The second portion 22D protrudes toward the opposite side of the first portion 21D in the y direction. The second portion 22D is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second portion 22D is bent in the z direction toward the first surface 31. The second portion 22D, the third portion 23D, and the fourth portion 24D have sides extending along the y direction on both sides in the x direction. The sides of the second portion 22D, the third portion 23D, and the fourth portion 24D that are located toward the third surface 33 in the x direction face the sides of the second portion 22C, the third portion 23C, and the fourth portion 24C that are located toward the fourth surface 34 in the x direction.

[0259] The lead 2E is spaced apart from the multiple leads 1. The lead 2E is disposed on the conductive portion 5. The lead 2E is electrically connected to the conductive portion 5. The lead 2E is an example of the second lead of the present disclosure. Furthermore, the lead 2E is joined to the second portion 52E of the wiring portion 50E of the conductive portion 5 via the conductive bonding material 82 described above.

[0260] The configuration of the lead 2E is not particularly limited, and in this embodiment, as shown in FIG. 15, the lead 2E will be described by dividing it into a first portion 21E, a second portion 22E, a third portion 23E, and a fourth portion 24E.

[0261] The first portion 21E is a portion joined to the second portion 52E of the wiring portion 50E. The shape of the first portion 21E is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the first portion 21E is rectangular and has an elongated rectangular shape with the y direction as the longitudinal direction. In the illustrated example, the first portion 21E overlaps with the second portion 52E when viewed in the z direction. The first portion 21E also has a through hole 211E. The through hole 211E penetrates the first portion 21E in the z direction. Similar to the through hole 211D of the first portion 21D of the lead 2D shown in FIG. 5, the through hole 211E is filled with a conductive bonding material 82. The conductive bonding material 82 is formed over the entire surface of the lead 2E. However, the conductive bonding material 82 may remain within the through hole 211E and not reach the surface of the lead 2E.

[0262] The third portion 23E and the fourth portion 24E are covered with the sealing resin 7. The third portion 23E is connected to the first portion 21E and the fourth portion 24E. Similar to the third portion 23D and the fourth portion 24D of the lead 2D shown in FIG. 5, the fourth portion 24E is shifted in the z direction toward the first surface 31 relative to the first portion 21E. An end of the fourth portion 24E is flush with the sixth surface 75 of the resin 7. In the illustrated example, the first portion 21E, the third portion 23E, and the fourth portion 24E are substantially aligned when viewed in the y direction. Note that "substantially aligned when viewed in the y direction" refers to, for example, whether they completely match each other or whether there is a deviation within ±5% of the representative dimension (the x-direction dimension of the first portion 21E, the third portion 23E, and the fourth portion 24E). The third portion 23E overlaps the fifth surface 35 of the substrate 3 when viewed in the z direction.

[0263] The second portion 22E is connected to an end of the fourth portion 24E and is a portion of the lead 2E that protrudes from the sealing resin 7 toward the opposite side of the leads 1 in the y direction. The second portion 22E protrudes toward the opposite side of the first portion 21E in the y direction. The second portion 22E is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second portion 22E is bent in the z direction toward the first surface 31. The second portion 22E, the third portion 23E, and the fourth portion 24E have sides extending along the y direction on both sides in the x direction. The sides of the second portion 22E, the third portion 23E, and the fourth portion 24E that are located toward the third surface 33 in the x direction face the sides of the second portion 22D, the third portion 23D, and the fourth portion 24D that are located toward the fourth surface 34 in the x direction.

[0264] The lead 2F is spaced apart from the multiple leads 1. The lead 2F is disposed on the conductive portion 5. The lead 2F is electrically connected to the conductive portion 5. The lead 2F is an example of the second lead of the present disclosure. Furthermore, the lead 2F is joined to the second portion 52F of the wiring portion 50F of the conductive portion 5 via the conductive bonding material 82 described above.

[0265] The configuration of the lead 2F is not particularly limited, and in this embodiment, as shown in FIG. 15, the lead 2F will be described as being divided into a first portion 21F, a second portion 22F, a third portion 23F, and a fourth portion 24F.

[0266] The first portion 21F is a portion joined to the second portion 52F of the wiring portion 50F. The shape of the first portion 21F is not particularly limited, and may be selected appropriately from rectangular, polygonal, circular, elliptical, and other shapes. In the illustrated example, the first portion 21F is rectangular and has an elongated rectangular shape with the y direction as the longitudinal direction. In the illustrated example, the first portion 21F overlaps with the second portion 52F when viewed in the z direction. The first portion 21F also has a through hole 211F. The through hole 211F penetrates the first portion 21F in the z direction. Similar to the through hole 211E of the first portion 21E of the lead 2E shown in FIG. 5, the through hole 211F is filled with a conductive bonding material 82. The conductive bonding material 82 is also formed across the surface of the lead 2F. However, the conductive bonding material 82 may be configured to remain within the through hole 211F and not reach the surface of the lead 2F.

[0267] The third portion 23F and the fourth portion 24F are covered with the sealing resin 7. The third portion 23F is connected to the first portion 21F and the fourth portion 24F. Similar to the third portion 23E and the fourth portion 24E of the lead 2E shown in FIG. 5, the fourth portion 24F is shifted in the z direction toward the first surface 31 relative to the first portion 21F. An end of the fourth portion 24F is flush with the sixth surface 75 of the resin 7. In the illustrated example, the first portion 21F, the third portion 23F, and the fourth portion 24F are substantially aligned when viewed in the y direction. Note that "substantially aligned when viewed in the y direction" refers to, for example, whether they completely match each other or whether there is a deviation within ±5% of the representative dimensions (the x-direction dimensions of the first portion 21F, the third portion 23F, and the fourth portion 24F). The third portion 23F overlaps the fifth surface 35 of the substrate 3 when viewed in the z direction.

[0268] The second portion 22F is connected to an end of the fourth portion 24F and is a portion of the lead 2F that protrudes from the sealing resin 7 toward the opposite side of the leads 1 in the y direction. The second portion 22F protrudes toward the opposite side of the first portion 21F in the y direction. The second portion 22F is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second portion 22F is bent in the z direction toward the first surface 31. The second portion 22F, the third portion 23F, and the fourth portion 24F have sides extending along the y direction on both sides in the x direction. The sides of the second portion 22F, the third portion 23F, and the fourth portion 24F that are located toward the third surface 33 in the x direction face the sides of the second portion 22E, the third portion 23E, and the fourth portion 24E that are located toward the fourth surface 34 in the x direction.

[0269] The lead 2G is spaced apart from the multiple leads 1. The lead 2G is disposed on the conductive portion 5. The lead 2G is electrically connected to the conductive portion 5. The lead 2G is an example of the second lead of the present disclosure. The lead 2G is also joined to the second portion 52G of the wiring portion 50G of the conductive portion 5 via the conductive bonding material 82 described above.

[0270] The configuration of the lead 2G is not particularly limited, and in this embodiment, as shown in FIG. 15, the lead 2G will be described as being divided into a first portion 21G, a second portion 22G, a third portion 23G, and a fourth portion 24G.

[0271] The first portion 21G is a portion joined to the second portion 52G of the wiring portion 50G. The shape of the first portion 21G is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the first portion 21G is rectangular and has an elongated rectangular shape with the y direction as the longitudinal direction. In the illustrated example, the first portion 21G overlaps with the second portion 52G when viewed in the z direction. The first portion 21G also has a through hole 211G. The through hole 211G penetrates the first portion 21G in the z direction. Similar to the through hole 211F of the first portion 21F of the lead 2F shown in FIG. 5, the through hole 211G is filled with a conductive bonding material 82. The conductive bonding material 82 is formed over the entire surface of the lead 2G. However, the conductive bonding material 82 may remain within the through hole 211G and not reach the surface of the lead 2G.

[0272] The third portion 23G and the fourth portion 24G are covered with the sealing resin 7. The third portion 23G is connected to the first portion 21G and the fourth portion 24G. Similar to the third portion 23F and the fourth portion 24F of the lead 2F shown in FIG. 5, the fourth portion 24G is shifted in the z direction toward the first surface 31 relative to the first portion 21G. An end of the fourth portion 24G is flush with the sixth surface 75 of the resin 7. In the illustrated example, the first portion 21G, the third portion 23G, and the fourth portion 24G are substantially aligned when viewed in the y direction. Note that "substantially aligned when viewed in the y direction" refers to, for example, whether they completely match each other or whether there is a deviation within ±5% of the representative dimension (the x-direction dimension of the first portion 21G, the third portion 23G, and the fourth portion 24G). The third portion 23G overlaps the fifth surface 35 of the substrate 3 when viewed in the z direction.

[0273] The second portion 22G is connected to an end of the fourth portion 24G and is a portion of the lead 2G that protrudes from the sealing resin 7 toward the opposite side of the leads 1 in the y direction. The second portion 22G protrudes toward the opposite side of the first portion 21G in the y direction. The second portion 22G is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second portion 22G is bent in the z direction toward the first surface 31. The second portion 22G, the third portion 23G, and the fourth portion 24G have sides extending along the y direction on both sides in the x direction. The sides of the second portion 22G, the third portion 23G, and the fourth portion 24G that are located on the third surface 33 side in the x direction face the sides of the second portion 22F, the third portion 23F, and the fourth portion 24F that are located on the fourth surface 34 side in the x direction.

[0274] The lead 2H is spaced apart from the multiple leads 1. The lead 2H is disposed on the conductive portion 5. The lead 2H is electrically connected to the conductive portion 5. The lead 2H is an example of the second lead of the present disclosure. Furthermore, the lead 2H is joined to the second portion 52H of the wiring portion 50H of the conductive portion 5 via the conductive bonding material 82 described above.

[0275] The configuration of the lead 2H is not particularly limited, and in this embodiment, as shown in FIG. 15, the lead 2H will be described by dividing it into a first portion 21H, a second portion 22H, a third portion 23H, and a fourth portion 24H.

[0276] The first portion 21H is a portion joined to the second portion 52H of the wiring portion 50H. The shape of the first portion 21H is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the first portion 21H is rectangular and has an elongated rectangular shape with the y direction as the longitudinal direction. In the illustrated example, the first portion 21H overlaps with the second portion 52H when viewed in the z direction. The first portion 21H also has a through hole 211H. The through hole 211H penetrates the first portion 21H in the z direction. Similar to the through hole 211G of the first portion 21G of the lead 2G shown in FIG. 5, the through hole 211H is filled with a conductive bonding material 82. The conductive bonding material 82 is formed over the entire surface of the lead 2H. However, the conductive bonding material 82 may remain within the through hole 211G and not reach the surface of the lead 2G.

[0277] The third portion 23H and the fourth portion 24H are covered with the sealing resin 7. The third portion 23H is connected to the first portion 21H and the fourth portion 24H. Similar to the third portion 23G and the fourth portion 24G of the lead 2G shown in FIG. 5, the fourth portion 24H is shifted in the z direction toward the first surface 31 relative to the first portion 21H. An end of the fourth portion 24H is flush with the sixth surface 75 of the resin 7. In the illustrated example, the first portion 21H, the third portion 23H, and the fourth portion 24H are substantially aligned when viewed in the y direction. Note that "substantially aligned when viewed in the y direction" refers to, for example, whether they completely match each other or whether there is a deviation within ±5% of the representative dimensions (the x-direction dimensions of the first portion 21H, the third portion 23H, and the fourth portion 24H). The third portion 23H overlaps the fifth surface 35 of the substrate 3 when viewed in the z direction.

[0278] The second portion 22H is connected to an end of the fourth portion 24H and is a portion of the lead 2H that protrudes from the sealing resin 7 toward the opposite side of the leads 1 in the y direction. The second portion 22H protrudes toward the opposite side of the first portion 21H in the y direction. The second portion 22H is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second portion 22H is bent in the z direction toward the first surface 31. The second portion 22H, the third portion 23H, and the fourth portion 24H have sides extending along the y direction on both sides in the x direction. The sides of the second portion 22H, the third portion 23H, and the fourth portion 24H that are located toward the third surface 33 in the x direction face the sides of the second portion 22G, the third portion 23G, and the fourth portion 24G that are located toward the fourth surface 34 in the x direction.

[0279] The lead 2I is spaced apart from the multiple leads 1. The lead 2I is disposed on the conductive portion 5. The lead 2I is electrically connected to the conductive portion 5. The lead 2I is an example of the second lead of the present disclosure. Furthermore, the lead 2I is joined to the second portion 52I of the wiring portion 50I of the conductive portion 5 via the conductive bonding material 82 described above.

[0280] The configuration of the lead 2I is not particularly limited, and in this embodiment, as shown in FIG. 15, the lead 2I will be described by dividing it into a first portion 21I, a second portion 22I, a third portion 23I, and a fourth portion 24I.

[0281] The first portion 21I is a portion joined to the second portion 52I of the wiring portion 50I. The shape of the first portion 21I is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the first portion 21I is rectangular and has an elongated rectangular shape with the y direction as the longitudinal direction. In the illustrated example, the first portion 21I overlaps with the second portion 52I when viewed in the z direction. The first portion 21I also has a through hole 211I. The through hole 211I penetrates the first portion 21I in the z direction. Similar to the through hole 211H of the first portion 21H of the lead 2H shown in FIG. 5, the through hole 211I is filled with a conductive bonding material 82. The conductive bonding material 82 is also formed over the surface of the lead 2I. However, the conductive bonding material 82 may be configured to remain within the through hole 211I and not reach the surface of the lead 2I.

[0282] The third portion 23I and the fourth portion 24I are covered with the sealing resin 7. The third portion 23I is connected to the first portion 21I and the fourth portion 24I. Similar to the third portion 23H and the fourth portion 24H of the lead 2H shown in FIG. 5, the fourth portion 24I is shifted in the z direction toward the first surface 31 relative to the first portion 21I. An end of the fourth portion 24I is flush with the sixth surface 75 of the resin 7. In the illustrated example, the first portion 21I, the third portion 23I, and the fourth portion 24I are substantially aligned when viewed in the y direction. Note that being substantially aligned when viewed in the y direction refers to, for example, whether they completely match each other or whether there is a deviation within ±5% of their representative dimensions (the x-direction dimensions of the first portion 21I, the third portion 23I, and the fourth portion 24I). The third portion 23I overlaps the fifth surface 35 of the substrate 3 when viewed in the z direction.

[0283] The second portion 22I is connected to an end of the fourth portion 24I and is a portion of the lead 2I that protrudes from the sealing resin 7 on the side opposite the leads 1 in the y direction. The second portion 22I protrudes on the side opposite the first portion 21I in the y direction. The second portion 22I is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second portion 22I is bent in the z direction toward the first surface 31. The second portion 22I, the third portion 23I, and the fourth portion 24I have sides extending along the y direction on both sides in the x direction. The sides of the second portion 22I, the third portion 23I, and the fourth portion 24I that are located on the third surface 33 side in the x direction face the sides of the second portion 22H, the third portion 23H, and the fourth portion 24H that are located on the fourth surface 34 side in the x direction.

[0284] The lead 2J is spaced apart from the multiple leads 1. The lead 2J is disposed on the conductive portion 5. The lead 2J is electrically connected to the conductive portion 5. The lead 2J is an example of the second lead of the present disclosure. The lead 2J is also joined to the second portion 52J of the wiring portion 50J of the conductive portion 5 via the conductive bonding material 82 described above.

[0285] The configuration of the lead 2J is not particularly limited, and in this embodiment, as shown in FIG. 15, the lead 2J will be described divided into a first portion 21J, a second portion 22J, a third portion 23J, and a fourth portion 24J.

[0286] The first portion 21J is a portion joined to the second portion 52J of the wiring portion 50J. The shape of the first portion 21J is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the first portion 21J is rectangular and has an elongated rectangular shape with the y direction as the longitudinal direction. In the illustrated example, the first portion 21J overlaps with the second portion 52J when viewed in the z direction. The first portion 21J also has a through hole 211J. The through hole 211J penetrates the first portion 21J in the z direction. Similar to the through hole 211I of the first portion 21I of the lead 2I shown in FIG. 5, the through hole 211J is filled with a conductive bonding material 82. The conductive bonding material 82 is also formed across the surface of the lead 2J. However, the conductive bonding material 82 may be configured to remain within the through hole 211J and not reach the surface of the lead 2J.

[0287] The third portion 23J and the fourth portion 24J are covered with the sealing resin 7. The third portion 23J is connected to the first portion 21J and the fourth portion 24J. Similar to the third portion 23I and the fourth portion 24I of the lead 2I shown in FIG. 5, the fourth portion 24J is shifted in the z direction toward the first surface 31 relative to the first portion 21J. An end of the fourth portion 24J is flush with the sixth surface 75 of the resin 7. In the illustrated example, the first portion 21J, the third portion 23J, and the fourth portion 24J are substantially aligned when viewed in the y direction. Note that "substantially aligned when viewed in the y direction" refers to, for example, whether they completely match each other or whether there is a deviation within ±5% of the representative dimension (the x-direction dimension of the first portion 21J, the third portion 23J, and the fourth portion 24J). The third portion 23J overlaps the fifth surface 35 of the substrate 3 when viewed in the z direction.

[0288] The second portion 22J is connected to an end of the fourth portion 24J and is a portion of the lead 2J that protrudes from the sealing resin 7 toward the opposite side of the leads 1 in the y direction. The second portion 22J protrudes toward the opposite side of the first portion 21J in the y direction. The second portion 22J is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second portion 22J is bent in the z direction toward the first surface 31. The second portion 22J, the third portion 23J, and the fourth portion 24J have sides extending along the y direction on both sides in the x direction. The sides of the second portion 22J, the third portion 23J, and the fourth portion 24J that are located toward the third surface 33 in the x direction face the sides of the second portion 22I, the third portion 23I, and the fourth portion 24I that are located toward the fourth surface 34 in the x direction.

[0289] The lead 2K is spaced apart from the multiple leads 1. The lead 2K is disposed on the conductive portion 5. The lead 2K is electrically connected to the conductive portion 5. The lead 2K is an example of the second lead of the present disclosure. Furthermore, the lead 2K is joined to the second portion 52K of the wiring portion 50K of the conductive portion 5 via the conductive bonding material 82 described above.

[0290] The configuration of the lead 2K is not particularly limited, and in this embodiment, as shown in FIG. 15, the lead 2K will be described by dividing it into a first portion 21K, a second portion 22K, a third portion 23K, and a fourth portion 24K.

[0291] The first portion 21K is a portion joined to the second portion 52K of the wiring portion 50K. The shape of the first portion 21K is not particularly limited, and may be selected appropriately from rectangular, polygonal, circular, elliptical, and other shapes. In the illustrated example, the first portion 21K is rectangular and has an elongated rectangular shape with the y direction as the longitudinal direction. In the illustrated example, the first portion 21K overlaps with the second portion 52K when viewed in the z direction. The first portion 21K also has a through-hole 211K. The through-hole 211K penetrates the first portion 21K in the z direction. Similar to the through-hole 211J of the first portion 21J of the lead 2J shown in FIG. 5, the through-hole 211K is filled with a conductive bonding material 82. The conductive bonding material 82 is also formed across the surface of the lead 2K. However, the conductive bonding material 82 may be configured to remain within the through-hole 211K and not reach the surface of the lead 2K.

[0292] The third portion 23K and the fourth portion 24K are covered with the sealing resin 7. The third portion 23K is connected to the first portion 21K and the fourth portion 24K. Similar to the third portion 23J and the fourth portion 24J of the lead 2J shown in FIG. 5, the fourth portion 24K is shifted in the z direction toward the first surface 31 relative to the first portion 21K. An end of the fourth portion 24K is flush with the sixth surface 75 of the resin 7. In the illustrated example, the first portion 21K, the third portion 23K, and the fourth portion 24K are substantially aligned when viewed in the y direction. Note that "substantially aligned when viewed in the y direction" refers to, for example, whether they completely match each other or whether there is a deviation within ±5% of the representative dimensions (the x-direction dimensions of the first portion 21K, the third portion 23K, and the fourth portion 24K). The third portion 23K overlaps the fifth surface 35 of the substrate 3 when viewed in the z direction.

[0293] The second portion 22K is connected to an end of the fourth portion 24K and is a portion of the lead 2K that protrudes from the sealing resin 7 toward the opposite side of the leads 1 in the y direction. The second portion 22K protrudes toward the opposite side of the first portion 21K in the y direction. The second portion 22K is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second portion 22K is bent in the z direction toward the first surface 31. The second portion 22K, the third portion 23K, and the fourth portion 24K have sides extending along the y direction on both sides in the x direction. The sides of the second portion 22K, the third portion 23K, and the fourth portion 24K that are located on the third surface 33 side in the x direction face the sides of the second portion 22J, the third portion 23J, and the fourth portion 24J that are located on the fourth surface 34 side in the x direction.

[0294] The lead 2L is spaced apart from the multiple leads 1. The lead 2L is disposed on the conductive portion 5. The lead 2L is electrically connected to the conductive portion 5. The lead 2L is an example of the second lead of the present disclosure. Furthermore, the lead 2L is joined to the second portion 52L of the wiring portion 50L of the conductive portion 5 via the conductive bonding material 82 described above.

[0295] The configuration of the lead 2L is not particularly limited, and in this embodiment, as shown in FIG. 15, the lead 2L will be described by dividing it into a first portion 21L, a second portion 22L, a third portion 23L, and a fourth portion 24L.

[0296] The first portion 21L is a portion joined to the second portion 52L of the wiring portion 50L. The shape of the first portion 21L is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the first portion 21L is rectangular and has an elongated rectangular shape with the y direction as the longitudinal direction. In the illustrated example, the first portion 21L overlaps with the second portion 52L when viewed in the z direction. The first portion 21L also has a through hole 211L. The through hole 211L penetrates the first portion 21L in the z direction. Similar to the through hole 211K of the first portion 21K of the lead 2K shown in FIG. 5, the through hole 211L is filled with a conductive bonding material 82. The conductive bonding material 82 is formed over the entire surface of the lead 2L. However, the conductive bonding material 82 may remain within the through hole 211L and not reach the surface of the lead 2L.

[0297] The third portion 23L and the fourth portion 24L are covered with the sealing resin 7. The third portion 23L is connected to the first portion 21L and the fourth portion 24L. Similar to the third portion 23K and the fourth portion 24K of the lead 2K shown in FIG. 5, the fourth portion 24L is shifted in the z direction toward the first surface 31 relative to the first portion 21L. An end of the fourth portion 24L is flush with the sixth surface 75 of the resin 7. In the illustrated example, the first portion 21L, the third portion 23L, and the fourth portion 24L are substantially aligned when viewed in the y direction. Note that "substantially aligned when viewed in the y direction" refers to, for example, whether they completely match each other or whether there is a deviation within ±5% of the representative dimension (the x-direction dimension of the first portion 21L, the third portion 23L, and the fourth portion 24L). The third portion 23L overlaps the fifth surface 35 of the substrate 3 when viewed in the z direction.

[0298] The second portion 22L is connected to an end of the fourth portion 24L and is a portion of the lead 2L that protrudes from the sealing resin 7 toward the opposite side of the leads 1 in the y direction. The second portion 22L protrudes toward the opposite side of the first portion 21L in the y direction. The second portion 22L is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second portion 22L is bent in the z direction toward the first surface 31. The second portion 22L, the third portion 23L, and the fourth portion 24L have sides extending along the y direction on both sides in the x direction. The sides of the second portion 22L, the third portion 23L, and the fourth portion 24L that are located toward the third surface 33 in the x direction face the sides of the second portion 22K, the third portion 23K, and the fourth portion 24K that are located toward the fourth surface 34 in the x direction.

[0299] The lead 2M is spaced apart from the multiple leads 1. The lead 2M is disposed on the conductive portion 5. The lead 2M is electrically connected to the conductive portion 5. The lead 2M is an example of the second lead of the present disclosure. Furthermore, the lead 2M is joined to the second portion 52M of the wiring portion 50M of the conductive portion 5 via the conductive bonding material 82 described above.

[0300] The configuration of the lead 2M is not particularly limited, and in this embodiment, as shown in FIG. 15, the lead 2M will be described by dividing it into a first portion 21M, a second portion 22M, a third portion 23M, and a fourth portion 24M.

[0301] The first portion 21M is a portion joined to the second portion 52M of the wiring portion 50M. The shape of the first portion 21M is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the first portion 21M is rectangular and has an elongated rectangular shape with the y direction as the longitudinal direction. In the illustrated example, the first portion 21M overlaps with the second portion 52M when viewed in the z direction. The first portion 21M also has a through hole 211M. The through hole 211M penetrates the first portion 21M in the z direction. Similar to the through hole 211L of the first portion 21L of the lead 2L shown in FIG. 5, the through hole 211M is filled with a conductive bonding material 82. The conductive bonding material 82 is formed over the entire surface of the lead 2M. However, the conductive bonding material 82 may remain within the through hole 211M and not reach the surface of the lead 2M.

[0302] The third portion 23M and the fourth portion 24M are covered with the sealing resin 7. The third portion 23M is connected to the first portion 21M and the fourth portion 24M. Similar to the third portion 23L and the fourth portion 24L of the lead 2L shown in FIG. 5, the fourth portion 24M is shifted in the z direction toward the first surface 31 relative to the first portion 21M. The end of the fourth portion 24M is flush with the sixth surface 75 of the resin 7. In the illustrated example, the first portion 21M, the third portion 23M, and the fourth portion 24M are substantially aligned when viewed in the y direction. Note that "substantially aligned when viewed in the y direction" refers to, for example, whether they completely match each other or whether there is a deviation within ±5% of the representative dimension (the x-direction dimension of the first portion 21M, the third portion 23M, and the fourth portion 24M). The third portion 23M overlaps the fifth surface 35 of the substrate 3 when viewed in the z direction.

[0303] The second portion 22M is connected to an end of the fourth portion 24M and is a portion of the lead 2M that protrudes from the sealing resin 7 toward the opposite side of the leads 1 in the y direction. The second portion 22M protrudes toward the opposite side of the first portion 21M in the y direction. The second portion 22M is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second portion 22M is bent in the z direction toward the first surface 31. The second portion 22M, the third portion 23M, and the fourth portion 24M have sides extending along the y direction on both sides in the x direction. The sides of the second portion 22M, the third portion 23M, and the fourth portion 24M that are located toward the third surface 33 in the x direction face the sides of the second portion 22L, the third portion 23L, and the fourth portion 24L that are located toward the fourth surface 34 in the x direction.

[0304] The lead 2N is spaced apart from the multiple leads 1. The lead 2N is disposed on the conductive portion 5. The lead 2N is electrically connected to the conductive portion 5. The lead 2N is an example of the second lead of the present disclosure. Furthermore, the lead 2N is joined to the second portion 52N of the wiring portion 50N of the conductive portion 5 via the conductive bonding material 82 described above.

[0305] The configuration of the lead 2N is not particularly limited, and in this embodiment, as shown in FIG. 15, the lead 2N will be described by dividing it into a first portion 21N, a second portion 22N, a third portion 23N, and a fourth portion 24N.

[0306] The first portion 21N is a portion joined to the second portion 52N of the wiring portion 50N. The shape of the first portion 21N is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the first portion 21N is rectangular and has an elongated rectangular shape with the y direction as the longitudinal direction. In the illustrated example, the first portion 21N overlaps with the second portion 52N when viewed in the z direction. The first portion 21N also has a through hole 211N. The through hole 211N penetrates the first portion 21N in the z direction. Similar to the through hole 211M of the first portion 21M of the lead 2M shown in FIG. 5, the through hole 211N is filled with a conductive bonding material 82. The conductive bonding material 82 is formed over the entire surface of the lead 2N. However, the conductive bonding material 82 may remain within the through hole 211N and not reach the surface of the lead 2N.

[0307] The third portion 23N and the fourth portion 24N are covered with the sealing resin 7. The third portion 23N is connected to the first portion 21N and the fourth portion 24N. Similar to the third portion 23M and the fourth portion 24M of the lead 2M shown in FIG. 5, the fourth portion 24N is shifted in the z direction toward the first surface 31 relative to the first portion 21N. An end of the fourth portion 24N is flush with the sixth surface 75 of the resin 7. In the illustrated example, the first portion 21N, the third portion 23N, and the fourth portion 24N are substantially aligned when viewed in the y direction. "Substantially aligned when viewed in the y direction" refers to, for example, whether they completely match each other or whether there is a deviation within ±5% of their representative dimensions (the x-direction dimensions of the first portion 21N, the third portion 23N, and the fourth portion 24N). The third portion 23N overlaps the fifth surface 35 of the substrate 3 when viewed in the z direction.

[0308] The second portion 22N is connected to an end of the fourth portion 24N and is a portion of the lead 2N that protrudes from the sealing resin 7 toward the opposite side of the leads 1 in the y direction. The second portion 22N protrudes toward the opposite side of the first portion 21N in the y direction. The second portion 22N is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second portion 22N is bent in the z direction toward the first surface 31. The second portion 22N, the third portion 23N, and the fourth portion 24N have sides extending along the y direction on both sides in the x direction. The sides of the second portion 22N, the third portion 23N, and the fourth portion 24N that are located toward the third surface 33 in the x direction face the sides of the second portion 22M, the third portion 23M, and the fourth portion 24M that are located toward the fourth surface 34 in the x direction.

[0309] The lead 2O is spaced apart from the multiple leads 1. As shown in FIGS. 4 and 15, the lead 2O is disposed on the conductive portion 5. The lead 2O is electrically connected to the conductive portion 5. The lead 2O is also joined to the second portion 52O of the wiring portion 50O of the conductive portion 5 via the conductive bonding material 82 described above.

[0310] The configuration of the lead 2O is not particularly limited, and in this embodiment, as shown in Figures 4 and 15, the lead 2O will be described by dividing it into a first part 21O, a second part 22O, a third part 23O, a fourth part 24O, and a fifth part 25O.

[0311] The first portion 21O is a portion joined to the second portion 52O of the wiring portion 50O. The shape of the first portion 21O is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like. In the illustrated example, the first portion 21O is rectangular and has an elongated rectangular shape with the y direction as the longitudinal direction. In the illustrated example, the first portion 21O overlaps with the second portion 52O when viewed in the z direction. The first portion 21O also has a through hole 211O. The through hole 211O penetrates the first portion 21O in the z direction. Similar to the through hole 211C of the first portion 21C of the lead 2C shown in FIG. 5, the through hole 211O is filled with a conductive bonding material 82. The conductive bonding material 82 is also formed across the surface of the lead 2O. However, the conductive bonding material 82 may be configured to remain within the through hole 211O and not reach the surface of the lead 2O.

[0312] The third portion 23O, the fourth portion 24O, and the fifth portion 25O are covered with the sealing resin 7. The fifth portion 25O is connected to the first portion 21O and the third portion 23O. In the illustrated example, the fifth portion 25O has a portion aligned along the y direction and a portion tilted with respect to the y direction. The third portion 23O is connected to the fourth portion 24O and the fifth portion 25O. The fifth portion 25O overlaps with the fourth surface 34 of the substrate 3 when viewed in the z direction. Similar to the third portion 23C and the fourth portion 24C of the lead 2C shown in FIG. 5, the fourth portion 24O is shifted in the z direction from the first portion 21O toward the side toward which the first surface 31 faces. An end of the fourth portion 24O is flush with the sixth surface 75 of the resin 7.

[0313] The second portion 22O is connected to an end of the fourth portion 24O and is a portion of the lead 2O that protrudes from the sealing resin 7 on the side opposite the leads 1 in the y direction. The second portion 22O protrudes on the side opposite the first portion 21O in the y direction. The second portion 22O is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second portion 22O is bent in the z direction toward the first surface 31. The second portion 22O, the third portion 23O, and the fourth portion 24O have sides extending along the y direction on both sides in the x direction. The sides of the second portion 22O, the third portion 23O, and the fourth portion 24O that are located on the third surface 33 side in the x direction face the sides of the second portion 22N, the third portion 23N, and the fourth portion 24N that are located on the fourth surface 34 side in the x direction.

[0314] The lead 2P is spaced apart from the multiple leads 1. As shown in FIGS. 4 and 15, the lead 2P is disposed on the conductive portion 5. The lead 2P is electrically connected to the conductive portion 5. The lead 2P is also joined to the second portion 52P of the wiring portion 50P of the conductive portion 5 via the conductive bonding material 82 described above.

[0315] The configuration of the lead 2P is not particularly limited, and in this embodiment, as shown in Figures 4 and 15, the lead 2P will be described by dividing it into a first part 21P, a second part 22P, a third part 23P, a fourth part 24P, and a fifth part 25P.

[0316] The first portion 21P is a portion joined to the second portion 52P of the wiring portion 50P. The shape of the first portion 21P is not particularly limited, and may be rectangular, polygonal, circular, elliptical, or the like, as appropriate. In the illustrated example, the first portion 21P has a rectangular shape, and is an elongated rectangle with the y direction as the longitudinal direction. In the illustrated example, the first portion 21P overlaps with the second portion 52P when viewed in the z direction. The first portion 21P also has a through hole 211P. The through hole 211P penetrates the first portion 21P in the z direction. Similar to the through hole 211C of the first portion 21C of the lead 2C shown in FIG. 5, the through hole 211P is filled with a conductive bonding material 82. The conductive bonding material 82 is also formed over the entire surface of the lead 2P. However, the conductive bonding material 82 may be configured to remain within the through hole 211P and not reach the surface of the lead 2P.

[0317] The third portion 23P, the fourth portion 24P, and the fifth portion 25P are covered with the sealing resin 7. The fifth portion 25P is connected to the first portion 21P and the third portion 23P. In the illustrated example, the fifth portion 25P has a portion that is aligned with the y direction and a portion that is tilted with respect to the y direction. The fifth portion 25P overlaps the fourth surface 34 of the substrate 3 when viewed in the z direction. The third portion 23P is connected to the fourth portion 24P and the fifth portion 25P. Similar to the third portion 23C and the fourth portion 24C of the lead 2C shown in FIG. 5, the fourth portion 24P is shifted in the z direction from the first portion 21P toward the side toward which the first surface 31 faces. An end of the fourth portion 24P is flush with the sixth surface 75 of the resin 7.

[0318] The second portion 22P is connected to an end of the fourth portion 24P and is a portion of the lead 2P that protrudes from the sealing resin 7 toward the opposite side of the leads 1 in the y direction. The second portion 22P protrudes toward the opposite side of the first portion 21P in the y direction. The second portion 22P is used, for example, to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the second portion 22P is bent in the z direction toward the first surface 31. The second portion 22P, the third portion 23P, and the fourth portion 24P have sides extending along the y direction on both sides in the x direction. The sides of the second portion 22P, the third portion 23P, and the fourth portion 24P that are located toward the third surface 33 in the x direction face the sides of the second portion 22O, the third portion 23O, and the fourth portion 24O that are located toward the fourth surface 34 in the x direction.

[0319] The lead 2Z is ​​spaced apart from the substrate 3 when viewed in the z direction. In this embodiment, the lead 2Z is ​​arranged on the side of the substrate 3 facing the third surface 33 in the x direction. The lead 2Z is ​​also arranged on the opposite side of the lead 2A from the lead 2B in the x direction.

[0320] The configuration of the lead 2Z is ​​not particularly limited, and in this embodiment, the lead 2Z will be described as being divided into a second portion 22Z and a fourth portion 24Z, as shown in Fig. 4. In this embodiment, the lead 2Z is ​​insulated from the circuit of the semiconductor device A1.

[0321] The fourth portion 24Z is connected to the second portion 22Z and is covered with the sealing resin 7. Similar to the fourth portion 24C of the lead 2C, the fourth portion 24Z is positioned offset in the z direction from the first portion 21A toward the side toward which the first surface 31 faces. The shape of the fourth portion 24Z is not particularly limited, and in the illustrated example, it is a strip extending in the y direction. An end of the fourth portion 24Z is flush with the sixth surface 75 of the resin 7.

[0322] The second portion 22Z is ​​connected to an end of the fourth portion 24Z and is a portion of the lead 2Z that protrudes from the sealing resin 7. The second portion 22Z protrudes on the opposite side of the fourth portion 24Z in the y direction. The second portion 22Z is ​​used, for example, when mounting the semiconductor device A1 on an external circuit board. In the illustrated example, the second portion 22Z is ​​bent in the z direction toward the side facing the first surface 31.

[0323] As shown in FIGS. 4 and 15, the second portions 22A, 22B, and 22C are arranged in the x direction. 16. The second portions 22A and 22Z are spaced apart by a distance G21 in the x direction. These distances G21 are approximately the same length, with an error of within ±5%. The second portions 22C and 22D are spaced apart by a distance G22 in the x direction. The distance G22 is approximately the same length as the distance G21, with an error of within ±5%. The second portions 22D to 22N are spaced apart by a distance G23 in the x direction. The length of these distances G23 is shorter than the distance G21, with an error of within ±5% in the lengths of the distances G23. The second portions 22A and 22Z are spaced apart by a distance G24 in the x direction. An error of the distance G24 from the distance G21 is within ±5%. The distance G23 is also smaller than the distance G54 shown in FIG.

[0324] <Semiconductor chips 4A to 4F> The semiconductor chips 4A to 4F are arranged on a plurality of leads 1 and are an example of a semiconductor chip of the present disclosure. The types and functions of the semiconductor chips 4A to 4F are not particularly limited, and in this embodiment, a case where the semiconductor chips 4A to 4F are transistors will be described as an example. In the illustrated example, six semiconductor chips 4A to 4F are provided, but this is just an example, and the number of semiconductor chips is not limited in any way.

[0325] In the illustrated example, the semiconductor chips 4A to 4F are MOSFETs (SiC MOSFETs (metal-oxide-semiconductor field-effect transistors)) made of, for example, a SiC (silicon carbide) substrate. The semiconductor chips 4A to 4F may be MOSFETs based on a Si (silicon) substrate, and may include, for example, IGBT elements. Alternatively, the semiconductor chips 4A to 4F may be MOSFETs including GaN. In this embodiment, an N-type MOSFET is used for each of the semiconductor chips 4A to 4F. The same MOSFET is used for each of the semiconductor chips 4A to 4F in this embodiment. Here, the semiconductor chip 4A will be described as an example, and descriptions of the other semiconductor chips 4B to 4F will be omitted.

[0326] As shown in FIGS. 4, 5, and 9, the semiconductor chip 4A is disposed on the first portion 11A of the lead 1A. The semiconductor chip 4A has a gate electrode GP, a source electrode SP, and a drain electrode DP. In the illustrated example, the source electrode SP and the gate electrode GP are disposed on the surface of the semiconductor chip 4A facing the same side as the main surface 111A. The drain electrode DP is formed on the surface of the semiconductor chip 4A facing the main surface 111A. The gate electrode GP and the source electrode SP are made of, for example, Al or an Al alloy (Al-Si, Al-Cu, Al-Si-Cu, etc.). The drain electrode DP is made of, for example, Al or an Al alloy (Al-Si, Al-Cu, Al-Si-Cu, etc.). The shapes and sizes of the gate electrode GP, the source electrode SP, and the drain electrode DP are not particularly limited. In the illustrated example, the source electrode SP is larger than the gate electrode GP when viewed in the z direction. The gate electrode GP is disposed closer to the fifth surface 35 of the substrate 3 than the center of the semiconductor chip 4A in the y direction when viewed in the z direction. The source electrode SP has a portion located on one side of the gate electrode GP in the y direction and on both sides of the gate electrode GP in the x direction. The position of the gate electrode GP relative to the source electrode SP is not particularly limited. The gate electrode GP may also be formed in a square shape. The source electrode SP has a recess on the side facing the fifth surface 35, and the gate electrode GP is disposed in the recess.

[0327] 17 is an enlarged cross-sectional view of a main part of the semiconductor chip 4 A. The semiconductor chip 4 A of this embodiment includes a substrate 400, an epitaxial layer 401, a source wiring 411, a drain wiring 415, and a gate wiring 419.

[0328] The substrate 400 is made of SiC (silicon carbide) and has a high concentration of n-type impurities (for example, 1e18 to 1e21 cm -3 The substrate 400 has a front surface 400A and a back surface 400B. The front surface 400A is a Si surface, and the back surface 400B is a is the C-plane.

[0329] The epitaxial layer 401 is stacked on the surface 400A of the substrate 400. The epitaxial layer 401 is made of SiC doped with n-type impurities at a lower concentration than the substrate 400. - The epitaxial layer 401 is formed on the substrate 400 by a so-called epitaxy. The epitaxial layer 401 formed on the surface 400A, which is a Si surface, is grown using the Si surface as the main growth surface. Therefore, the surface 401A of the epitaxial layer 401 formed by growth is a Si surface, just like the surface 400A of the substrate 400.

[0330] The epitaxial layer 401 has a drain region 402 , a body region 403 , a source region 407 and a body contact region 408 .

[0331] The drain region 402 is a portion (base layer portion) on the C-plane side opposite to the surface 401A. The drain region 402 is an n-type semiconductor whose entire region is maintained in the state after epitaxial growth. - The n-type impurity concentration of the drain region 402 is, for example, 1e15 to 1e17 cm -3 is.

[0332] The body region 403 is formed on the surface 401A side of the epitaxial layer 401. The body region 403 contacts the drain region 402 from the surface 401A side (Si surface side) of the epitaxial layer 401. The p-type impurity concentration of the body region 403 is, for example, 1e16 to 1e19 cm -3 is.

[0333] The epitaxial layer 401 has a gate trench 404. The gate trench 404 is formed by digging down from the surface 401A. Although not shown in FIG. 17 , a plurality of gate trenches 404 are formed at regular intervals, and they extend parallel to each other in the same direction (a direction perpendicular to the plane of the paper in FIG. 17 ; hereinafter, this direction may be referred to as the “direction along the gate width”), forming, for example, a striped structure.

[0334] Each gate trench 404 has two side surfaces 404a and a bottom surface 404b. The two side surfaces 404a face each other with a gap therebetween and are perpendicular to the surface 401A. The bottom surface 404b is connected to the two side surfaces 404a and has a portion parallel to the surface 401A. The gate trench 404 penetrates the body region 403 in the layer thickness direction, and its deepest portion (bottom surface 404b) reaches the drain region 402.

[0335] A gate insulating film 405 is formed on the inner surface of the gate trench 404 and on the surface 401A of the epitaxial layer 401 so as to cover the entire inner surface (side surface 404a and bottom surface 404b) of the gate trench 404. The gate insulating film 405 is made of an oxide film containing nitrogen (Ni), for example, a silicon nitride oxide film formed by thermal oxidation using a nitrogen-containing gas. The nitrogen content (nitrogen concentration) of the gate insulating film 405 is, for example, 0.1 to 10%.

[0336] The gate insulating film 405 has insulating film side portions 405a and an insulating film bottom portion 405b. The insulating film side portions 405a are portions on the side surfaces 404a of the gate trench 404. The insulating film bottom portion 405b is a portion on the bottom surface 404b of the gate trench 404. In the illustrated example, the thickness T2 of the insulating film bottom portion 405b is the same as or smaller than the thickness T1 of the insulating film side portions 405a. Specifically, the ratio of the thickness T2 of the insulating film bottom portion 405b to the thickness T1 of the insulating film side portions 405a (thickness T2 of the insulating film bottom portion 405b / thickness T1 of the insulating film side portions 405a) is 0.3 to 1.0, and preferably 0.5 to 1.0. The thickness T1 of the insulating film side portions 405a is, for example, 300 to 1000 Å, and the thickness T2 of the insulating film bottom portion 405b is, for example, 150 to 500 Å.

[0337] A gate electrode 406 is buried in the gate insulating film 405. The gate electrode 406 is formed by filling the inside of the gate insulating film 405 with a polysilicon material doped with a high concentration of N-type impurities.

[0338] The source region 407 is located in the surface layer of the body region 403 on both sides of the gate trench 404 in a direction perpendicular to the gate width (the left-right direction in FIG. 17). + Type The source region 407 is a region doped with a high concentration of n-type impurities, which is higher than the n-type impurity concentration of the drain region 402. The n-type impurity concentration of the source region 407 is, for example, 1e18 to 1e21 cm -3 The source region 407 extends in the direction along the gate width at a position adjacent to the gate trench 404.

[0339] The body contact region 408 penetrates the center of the source region 407 in a direction perpendicular to the gate width from the surface 401A, and is connected to the body region 403. + In the area of ​​type The body contact region 408 is a region doped with a high concentration of p-type impurities, which is higher than the p-type impurity concentration of the body region 403. The p-type impurity concentration of the body contact region 408 is, for example, 1e18 to 1e21 cm -3 is.

[0340] The gate trenches 404 and source regions 407 are alternately provided in a direction perpendicular to the gate width and extend in the direction parallel to the gate width. A boundary between adjacent unit cells in the direction perpendicular to the gate width is set on the source region 407 along the source region 407. At least one body contact region 408 is provided across two unit cells adjacent in the direction perpendicular to the gate width. The boundary between adjacent unit cells in the direction parallel to the gate width is set so that the gate electrode 406 included in each unit cell has a constant gate width.

[0341] On the epitaxial layer 401, an interlayer insulating film 409 made of silicon oxide (SiO2) is formed. In the interlayer insulating film 409 and the gate insulating film 405, contact holes 410 are formed to expose the surfaces of the source region 407 and the body contact region 408.

[0342] The source wiring 411 is formed on the interlayer insulating film 409. The source wiring 411 is in contact (electrically connected) with the source region 407 and the body contact region 408 via a contact hole 410. The source wiring 411 has a polysilicon layer 412, a metal layer 413, and an intermediate layer 414.

[0343] The polysilicon layer 412 is a layer in contact with the source region 407 and the body contact region 408. The polysilicon layer 412 is a doped layer formed using doped polysilicon doped with impurities, and has a thickness of, for example, 1e19 to 1e21 cm -3 Preferably, the polysilicon layer 412 is a heavily doped layer doped with impurities at a high concentration. When forming the polysilicon layer 412 as a doped layer (including a heavily doped layer), impurities that can be used include N-type impurities such as phosphorus (P) or arsenic (As), and p-type impurities such as boron (B). The polysilicon layer 412 completely fills the contact hole 410. The thickness of the polysilicon layer 412 varies depending on the depth of the contact hole 410, but is, for example, 5000 to 1000 Å.

[0344] The metal layer 413 is formed on the polysilicon layer 412. The metal layer 413 is formed using, for example, aluminum (Al), gold (Au), silver (Ag), copper (Cu), or an alloy thereof or a metal material containing these. The metal layer 413 forms the outermost layer of the source wiring 411, and is connected (bonded) to, for example, the first wire 91A. The thickness of the metal layer 413 is, for example, 1 to 5 μm.

[0345] Intermediate layer 414 is interposed between polysilicon layer 412 and metal layer 413 and contains titanium (Ti). Intermediate layer 414 is made of a single layer containing titanium or a plurality of layers containing such a layer. The layer containing titanium can be formed using titanium, titanium nitride (TiN), or the like. Intermediate layer 414 has a thickness of, for example, 200 to 500 nm.

[0346] The source wiring 411 having such a polysilicon layer 412, intermediate layer 414, and metal layer 413 preferably has a stacked structure (Po-Si / Ti / TiN / Al) in which polysilicon (polysilicon layer 412), titanium (intermediate layer 414), titanium nitride (intermediate layer 414), and aluminum (metal layer 413) are stacked in this order.

[0347] The drain wiring 415 is formed on the rear surface 400B of the substrate 400. The drain wiring 415 is in contact (electrically connected) with the substrate 400. The drain wiring 415 has a polysilicon layer 416, a metal layer 417, and an intermediate layer 418.

[0348] The polysilicon layer 416 is a layer that comes into contact with the substrate 400. The polysilicon layer 416 can be formed using the same material as that of the polysilicon layer 412. The thickness of the polysilicon layer 416 is, for example, 1000 to 2000 Å.

[0349] Metal layer 417 is formed on polysilicon layer 416. Metal layer 417 can be formed using the same material as that of metal layer 413. Metal layer 417 forms the outermost layer of drain wiring 415, and is bonded to first portion 11A of lead 1A when substrate 400 is mounted on first portion 11A of lead 1A, for example. Metal layer 417 has a thickness of, for example, 0.5 to 1 μm.

[0350] Intermediate layer 418 is a layer containing titanium (Ti) and is interposed between polysilicon layer 416 and metal layer 417. Intermediate layer 418 can be formed using the same material as that of intermediate layer 414.

[0351] The gate wiring 419 is in contact (electrically connected) with the gate electrode 406 via a contact hole (not shown) formed in the interlayer insulating film 409. When a predetermined voltage (a voltage equal to or greater than the gate threshold voltage) is applied to the gate wiring 419 while a predetermined potential difference is generated between the source wiring 411 and the drain wiring 415 (between the source and drain), an electric field from the gate electrode 406 forms a channel in the body region 403 near the interface with the gate insulating film 405. As a result, a current flows between the source wiring 411 and the drain wiring 415, and the semiconductor chip 4A is turned on.

[0352] In this embodiment, as shown in FIGS. 4, 5, 9, and 10, three semiconductor chips 4A, 4B, and 4C are arranged on the main surface 111A of the first portion 11A of the lead 1A. The three semiconductor chips 4A, 4B, and 4C are spaced apart from one another in the x-direction and overlap one another when viewed in the x-direction. The number of semiconductor chips mounted on the lead 1A is not limited. The three semiconductor chips 4A, 4B, and 4C are each arranged within an area of ​​the main surface 111A surrounded by a groove 1112A when viewed in a plan view. In the illustrated example, when viewed in the z-direction, the gate electrodes GP of the semiconductor chips 4A, 4B, and 4C are mounted such that they are located closer to the leads 2 than the centers of the semiconductor chips 4A, 4B, and 4C in the y-direction. In the illustrated example, the drain electrodes DP of the semiconductor chips 4A, 4B, and 4C are bonded to the main surface 111A by a conductive bonding material 83.

[0353] The conductive bonding material 83 may be any material capable of bonding and electrically connecting the drain electrodes DP of the semiconductor chips 4A, 4B, and 4C to the main surface 111A. Examples of the conductive bonding material 83 include silver paste, copper paste, and solder. The conductive bonding material 83 corresponds to the second conductive bonding material of the present disclosure. In this embodiment, the conductive bonding material 83 extends beyond the outer periphery of the semiconductor chips 4A, 4B, and 4C in a planar view. For example, when the conductive bonding material 83 performs its bonding function by melting and then solidifying, the conductive bonding material 83 tends to be formed so as to contact the edge of the groove portion 1112A, as shown in FIG. 6 . This is because the surface tension generated at the edge of the groove portion 1112A prevents the molten conductive bonding material 83 from spreading.

[0354] In this embodiment, as shown in FIGS. 4, 5, 9, and 14, a semiconductor chip 4D is disposed on the main surface 111B of the first portion 11B of the lead 1B. The number of semiconductor chips mounted on the lead 1B is not limited. The semiconductor chip 4D is disposed within a region of the main surface 111B surrounded by the groove 1112B in a plan view. In the illustrated example, the gate electrode GP of the semiconductor chip 4D is mounted in a position positioned closer to the leads 2 than the center of the semiconductor chip 4D in the y direction when viewed in the z direction. In the illustrated example, the drain electrode DP of the semiconductor chip 4D is bonded to the main surface 111B by the conductive bonding material 83 described above.

[0355] In this embodiment, as shown in FIGS. 4, 5, 9, and 14, a semiconductor chip 4E is disposed on the main surface 111C of the first portion 11C of the lead 1C. The number of semiconductor chips mounted on the lead 1C is not limited. The semiconductor chip 4E is disposed within a region of the main surface 111C surrounded by the groove 1112C in a plan view. In the illustrated example, the gate electrode GP of the semiconductor chip 4E is mounted in a position positioned closer to the leads 2 than the center of the semiconductor chip 4E in the y direction when viewed in the z direction. In the illustrated example, the drain electrode DP of the semiconductor chip 4E is bonded to the main surface 111C by the conductive bonding material 83 described above.

[0356] In this embodiment, as shown in FIGS. 4, 5, 9, and 14, a semiconductor chip 4F is disposed on the main surface 111D of the first portion 11D of the lead 1D. The number of semiconductor chips mounted on the lead 1D is not limited. The semiconductor chip 4F is disposed within a region of the main surface 111D surrounded by the groove 1112D in a plan view. In the illustrated example, the gate electrode GP of the semiconductor chip 4F is mounted in a position closer to the leads 2 than the center of the semiconductor chip 4F in the y direction when viewed in the z direction. Also, in the illustrated example, the drain electrode DP of the semiconductor chip 4F is bonded to the main surface 111D with the conductive bonding material 83. As shown in FIG. 4, in the illustrated example, the semiconductor chip 4C and the semiconductor chip 4D overlap the connection portion 57 of the conductive portion 5 when viewed in the y direction. As shown in FIG. 5, the semiconductor chip 4B is positioned closer to the substrate 3 than the top surface of the fourth portion 14A in the z direction.

[0357] <Control chip 4G, 4H> The control chips 4G and 4H are used to control the driving of at least one of the semiconductor chips 4A to 4F. As shown in FIGS. 4 and 15, the control chips 4G and 4H are electrically connected to the conductive portion 5 and at least one of the semiconductor chips 4A to 4F, and are arranged on the substrate 3. In this embodiment, the control chip 4G controls the driving of the three semiconductor chips 4A, 4B, and 4C. The control chip 4H controls the driving of the three semiconductor chips 4D, 4E, and 4F. The shape and size of the control chips 4G and 4H are not particularly limited. In the illustrated example, the control chips 4G and 4H are rectangular when viewed in the z direction and have an elongated rectangular shape with the x direction as the longitudinal direction.

[0358] In this embodiment, the control chip 4G is mounted on the first base portion 55 of the conductive portion 5. Furthermore, the control chip 4H is disposed on the second base portion 56 of the conductive portion 5. In this embodiment, the control chip 4G is bonded to the first base portion 55 by a conductive bonding material 84. The control chip 4H is bonded to the second base portion 56 by a conductive bonding material 84.

[0359] The conductive bonding material 84 may be any material capable of bonding the control chip 4G to the first base 55 and bonding and electrically connecting the control chip 4H to the second base 56. Examples of the conductive bonding material 84 include silver paste, copper paste, and solder. The conductive bonding material 84 corresponds to the third conductive member of the present disclosure. In this embodiment, the conductive bonding material 84 extends beyond the outer peripheries of the control chips 4G and 4H in a planar view. As an example of the reason for this configuration, when the conductive bonding material 84 performs its bonding function by solidifying after being molten, as shown in FIG. 7, the molten conductive bonding material 84 spreads to the peripheral region of the control chip 4G (control chip 4H) in the z-direction. Therefore, in the illustrated example, the conductive bonding material 84 protrudes beyond the outer edges of the control chips 4G and 4H in the z-direction. However, the specific shape of the conductive bonding material 84 is not limited in any way. The control chips 4G and 4H may be bonded to the first base portion 55 by an insulating bonding material instead of the conductive bonding material 84.

[0360] As shown in FIG. 4, the control chip 4G is located between the leads 2B to 2O and the leads 1A to 1G when viewed in the x direction. Furthermore, the control chip 4H is located between the leads 2B to 2O and the leads 1A to 1G when viewed in the x direction. The control chip 4G overlaps the semiconductor chip 4B when viewed in the y direction. Furthermore, in the illustrated example, the control chip 4G overlaps the semiconductor chip 4A when viewed in the y direction. The control chip 4H overlaps the semiconductor chip 4E when viewed in the y direction. The control chip 4G may overlap the semiconductor chip 4C when viewed in the y direction. The control chip 4H may overlap either or both of the semiconductor chips 4D and 4F when viewed in the y direction.

[0361] As shown in FIGS. 15 and 16 , in the illustrated example, the control chip 4G overlaps with the wiring portion 50B (first portion 51B) and the wiring portion 50C (first portion 51C) when viewed in the y direction. Furthermore, the control chip 4G overlaps with the second base portion 56 and the control chip 4H when viewed in the x direction. The control chip 4H overlaps with the wiring portion 50I (first portion 51I), the wiring portion 50J (first portion 51J), the wiring portion 50K (first portion 51K), and the wiring portion 50L (first portion 51L) when viewed in the y direction. Furthermore, the control chip 4H overlaps with the wiring portion 50O (first portion 51O) and the wiring portion 50P (first portion 51P) when viewed in the x direction.

[0362] As shown in FIG. 5, the control chip 4G is arranged closer to the substrate 3 than the upper end of the fourth part 24C in the z direction. Furthermore, the control chip 4G is arranged at a lower position on the substrate 3 side than the upper end of the first part 21C in the z direction. The control chip 4H is arranged closer to the substrate 3 than the upper end of the fourth part 24C in the z direction. Furthermore, the control chip 4H is arranged at a lower position on the substrate 3 side than the upper end of the first part 21C in the z direction.

[0363] <Diode 49U, 49V, 49W> The diodes 49U, 49V, and 49W are electrically connected to the control chip 4G. In this embodiment, the diodes 49U, 49V, and 49W function as so-called boot diodes for applying a higher voltage to the control chip 4G, for example. As shown in FIGS. 4, 15, and 16, the diode 49U is bonded to the first portion 51A of the wiring portion 50A of the conductive portion 5 via a conductive bonding material 85. The conductive bonding material 85 is made of, for example, the same material as the conductive bonding material 84 described above. The conductive bonding material 85 extends outward beyond the outer periphery of the diodes 49U, 49V, and 49W in a plan view. This configuration As an example of the cause, when conductive bonding material 85 performs its bonding function by solidifying after being melted, the melted conductive bonding material 85 spreads to the peripheral region of diode 49W (as well as diodes 49U and 49V) as viewed in the z direction, as shown in Fig. 8. Therefore, in the illustrated example, conductive bonding material 85 protrudes from the outer edge of diode 49U as viewed in the z direction. However, the specific shape of conductive bonding material 85 is not limited in any way.

[0364] 4, 15, and 16, diode 49V is joined to first portion 51B of wiring portion 50B of conductive portion 5 via the above-described conductive bonding material 85. Diode 49W is joined to first portion 51C of wiring portion 50C of conductive portion 5 via the above-described conductive bonding material 85.

[0365] The specific arrangement of diodes 49U, 49V, and 49W is not particularly limited. As shown in FIGS. 15 and 16 , in the illustrated example, the center of diode 49U in the x direction is shifted toward wiring portion 50B (first portion 51B) from the center of first portion 51A in the x direction. The center of diode 49U in the y direction is shifted toward the opposite side of lead 2A from the center of first portion 51A in the y direction. The center of diode 49V in the x direction is shifted toward wiring portion 50A (first portion 51A) from the center of first portion 51B in the x direction. The center of diode 49V in the y direction is shifted toward lead 2B from the center of first portion 51B in the y direction. The center of diode 49W in the x direction is shifted toward wiring portion 50D (first portion 51D) from the center of first portion 51C in the x direction. The center of the diode 49W in the y direction is shifted toward the lead 2C side with respect to the center of the first portion 51C in the y direction.

[0366] 5, diode 49W is arranged at a position lower on the substrate 3 side than the upper end of fourth portion 24C in the z direction. Furthermore, diode 49W is arranged at a position lower on the substrate 3 side than the upper end of first portion 21C in the z direction. This positional relationship also applies to diodes 49U and 49V.

[0367] <First wires 91A to 91F> The first wires 91A-91F are connected to any of the semiconductor chips 4A-4F and any of the leads 1. The material of the first wires 91A-91F is not particularly limited and may be made of, for example, aluminum (Al) or copper (Cu). The wire diameter of the first wires 91A-91F is not particularly limited and may be, for example, about 250-500 μm. The first wires 91A-91F correspond to the first conductive member of the present disclosure. Note that, instead of the first wires 91A-91F, leads made of, for example, Cu may be used.

[0368] As shown in FIG. 4, one end of the first wire 91A is connected to the source electrode SP of the semiconductor chip 4A, and the other end is connected to the fourth portion 14B of the lead 1B. The position of the first wire 91A on the source electrode SP and the fourth portion 14B is not particularly limited. As shown in FIG. 10, in the illustrated example, one end of the first wire 91A is connected to a position spaced away from the center of the source electrode SP of the semiconductor chip 4A in the y direction on the opposite side of the gate electrode GP when viewed in the z direction. Furthermore, when viewed in the y direction, the first wire 91A overlaps with the center of the source electrode SP of the semiconductor chip 4A in the x direction. The first wire 91A is inclined with respect to the x and y directions.

[0369] As shown in Fig. 10, the first wires 91A, 91B, and 91C have end portions 911A, 911B, and 911C. The end portion 911A will be described below, and the end portions 911B and 911C may have the same shape as the end portion 911A. The same applies to the first wires 91D, 91E, and 91F. Fig. 11 is an enlarged plan view of the main portion showing the end portion of the first wire 91A. 12 is an enlarged cross-sectional view of a main portion taken along line XII-XII in FIG. 11. FIG. 13 is an enlarged cross-sectional view of a main portion taken along line XIII-XIII in FIG. 11. The end portion 911A is, for example, a portion bonded to the source electrode SP of the semiconductor chip 4A. The end portion 911A has a first surface 911Aa, a second surface 911Ab, and a third surface 911Ac. The first surface 911Aa is a surface that is inclined so as to approach the semiconductor chip 4A as it approaches the tip edge of the tip portion 911Aa. The second surface 911Ab is a surface that faces upward in the z direction. The two third surfaces 911Ac are arranged on both sides of the second surface 911Ab and are inclined so as to approach the semiconductor chip 4A as they move away from the second surface 911Ab. The wires 91B to 91F also have end portions similar to the end portion 911A.

[0370] As shown in FIG. 4, one end of the first wire 91B is connected to the source electrode SP of the semiconductor chip 4B, and the other end is connected to the fourth portion 14C of the lead 1C. The position of the first wire 91B on the source electrode SP and the fourth portion 14C is not particularly limited. As shown in FIG. 10, in the illustrated example, one end of the first wire 91B is connected to a position spaced away from the center of the source electrode SP of the semiconductor chip 4B in the y direction on the opposite side of the gate electrode GP when viewed in the z direction. Furthermore, when viewed in the y direction, the first wire 91B overlaps with the center of the source electrode SP of the semiconductor chip 4B in the x direction. The first wire 91B is inclined with respect to the x and y directions.

[0371] As shown in FIG. 4, one end of the first wire 91C is connected to the source electrode SP of the semiconductor chip 4C, and the other end is connected to the fourth portion 14D of the lead 1D. The position of the first wire 91C on the source electrode SP and the fourth portion 14D is not particularly limited. As shown in FIG. 10, in the illustrated example, one end of the first wire 91C is connected to a position spaced away from the center of the source electrode SP of the semiconductor chip 4C in the y direction on the opposite side of the gate electrode GP when viewed in the z direction. Furthermore, when viewed in the y direction, the first wire 91C overlaps with the center of the source electrode SP of the semiconductor chip 4C in the x direction. The first wire 91C is inclined with respect to the x and y directions.

[0372] As shown in FIG. 4, one end of the first wire 91D is connected to the source electrode SP of the semiconductor chip 4D, and the other end is connected to the fourth portion 14E of the lead 1E. The position of the first wire 91D on the source electrode SP and the fourth portion 14E is not particularly limited. As shown in FIG. 10, in the illustrated example, one end of the first wire 91D is connected to a position spaced away from the center of the source electrode SP of the semiconductor chip 4D in the y direction on the opposite side of the gate electrode GP when viewed in the z direction. Furthermore, when viewed in the y direction, the first wire 91D overlaps with the center of the source electrode SP of the semiconductor chip 4D in the x direction. The first wire 91D is inclined with respect to the x and y directions.

[0373] As shown in FIG. 4, one end of the first wire 91E is connected to the source electrode SP of the semiconductor chip 4E, and the other end is connected to the fourth portion 14F of the lead 1F. The position of the first wire 91E on the source electrode SP and the fourth portion 14F is not particularly limited. As shown in FIG. 10, in the illustrated example, one end of the first wire 91E is connected to a position spaced away from the center of the source electrode SP of the semiconductor chip 4E in the y direction on the opposite side of the gate electrode GP when viewed in the z direction. Furthermore, when viewed in the y direction, the first wire 91E overlaps with the center of the source electrode SP of the semiconductor chip 4E in the x direction. The first wire 91E is inclined with respect to the x and y directions.

[0374] 4, one end of the first wire 91F is connected to the source electrode SP of the semiconductor chip 4F, and the other end is connected to the fourth portion 14G of the lead 1G. The position of the source electrode SP and the fourth portion 14G to which the first wire 91F is joined is not particularly limited. As shown in FIG. 10, in the illustrated example, one end of the first wire 91F is located on the opposite side of the gate electrode GP from the center in the y direction of the source electrode SP of the semiconductor chip 4F when viewed in the z direction. The first wire 91F is connected to a position spaced apart from the center of the source electrode SP of the semiconductor chip 4F in the x direction when viewed in the y direction. One end of the first wire 91F is disposed at a position shifted toward the semiconductor chip 4E from the center of the source electrode SP of the semiconductor chip 4F in the x direction when viewed in the y direction. The first wire 91F is inclined with respect to the x direction and the y direction.

[0375] <Second wire 92> As shown in FIG. 4, the plurality of second wires 92 are connected to either the control chip 4G or 4H. The material of the second wires 92 is not particularly limited and may be, for example, gold (Au), silver (Ag), copper (Cu), or aluminum (Al). The diameter of the second wires 92 is not particularly limited and, in this embodiment, is smaller than the diameter of the first wires 91A to 91F. The diameter of the second wires 92 is, for example, approximately 10 μm to 50 μm. The second wires 92 correspond to the second conductive member of the present disclosure. In the following description, the second wires 92 connected to the control chip 4G will be referred to as second wires 92G, and the second wires 92 connected to the control chip 4H will be referred to as second wires 92H.

[0376] 4, a second wire 92G is connected to the gate electrode GP of the semiconductor chip 4A and a portion of the control chip 4G that is closer to the first part 11A than the center in the y direction. Also, a second wire 92G is connected to the source electrode SP of the semiconductor chip 4A and a portion of the control chip 4G that is closer to the first part 11A than the center in the y direction. This second wire 92G is connected to the source electrode SP of the semiconductor chip 4A that is closer to the semiconductor chip 4B than the gate electrode GP in the x direction.

[0377] 4, a second wire 92G is connected to the gate electrode GP of the semiconductor chip 4B and a portion of the control chip 4G that is closer to the first part 11A than the center in the y direction. Also, a second wire 92G is connected to the source electrode SP of the semiconductor chip 4B and a portion of the control chip 4G that is closer to the first part 11A than the center in the y direction. This second wire 92G is connected to the source electrode SP of the semiconductor chip 4B that is closer to the semiconductor chip 4C than the gate electrode GP in the x direction.

[0378] 4, a second wire 92G is connected to the gate electrode GP of the semiconductor chip 4C and a portion of the control chip 4G that is closer to the first part 11A than the center in the y direction. Also, a second wire 92G is connected to the source electrode SP of the semiconductor chip 4C and a portion of the control chip 4G that is closer to the first part 11A than the center in the y direction. This second wire 92G is connected to the source electrode SP of the semiconductor chip 4B that is closer to the semiconductor chip 4B than the gate electrode GP in the x direction.

[0379] 4, a second wire 92H is connected to the gate electrode GP of the semiconductor chip 4D and a portion of the control chip 4H that is closer to the first part 11A than the center in the y direction. A second wire 92H is connected to the gate electrode GP of the semiconductor chip 4E and a portion of the control chip 4H that is closer to the first part 11A than the center in the y direction. A second wire 92H is connected to the gate electrode GP of the semiconductor chip 4F and a portion of the control chip 4H that is closer to the first part 11A than the center in the y direction.

[0380] 15 and 16, one end of each of the two second wires 92G is connected to the first portion 51A of the wiring portion 50A, and the other end is connected to the control chip 4G. In addition, one end of each of the second wires 92G is connected to the diode 49U, and the other end is connected to the control chip 4G.

[0381] As shown in FIGS. 15 and 16, one end of each of the two second wires 92G is connected to the first wire of the wiring portion 50B. One end of a second wire 92G is connected to the first part 51B, and the other end is connected to the control chip 4G. Also, one end of a second wire 92G is connected to the diode 49V, and the other end is connected to the control chip 4G.

[0382] 15 and 16, one end of each of the two second wires 92G is connected to the first portion 51C of the wiring portion 50C, and the other end is connected to the control chip 4G. In addition, one end of each of the second wires 92G is connected to the diode 49W, and the other end is connected to the control chip 4G.

[0383] As shown in FIGS. 15 and 16, one end of the second wire 92G is connected to the first portion 51D of the wiring unit 50D, and the other end is connected to the control chip 4G. Also, one end of the second wire 92G is connected to the first portion 51E of the wiring unit 50E, and the other end is connected to the control chip 4G. Also, one end of the second wire 92G is connected to the first portion 51F of the wiring unit 50F, and the other end is connected to the control chip 4G. Also, one end of the second wire 92G is connected to the first portion 51G of the wiring unit 50G, and the other end is connected to the control chip 4G. Also, one end of each of the two second wires 92G is connected to the second portion 572 of the connection unit 57, and the other end is connected to the control chip 4G.

[0384] As shown in FIGS. 15 and 16, one end of the second wire 92H is connected to the first portion 51I of the wiring unit 50I, and the other end is connected to the control chip 4H. Also, one end of the second wire 92H is connected to the first portion 51J of the wiring unit 50J, and the other end is connected to the control chip 4H. Also, one end of the second wire 92H is connected to the first portion 51K of the wiring unit 50K, and the other end is connected to the control chip 4H. Also, one end of each of the two second wires 92H is connected to the first portion 51L of the wiring unit 50L, and the other end is connected to the control chip 4H. Also, one end of the second wire 92H is connected to the first portion 51M of the wiring unit 50M, and the other end is connected to the control chip 4H. Also, one end of the second wire 92H is connected to the first portion 51N of the wiring unit 50N, and the other end is connected to the control chip 4H. Furthermore, one end of each of the two second wires 92H is connected to the first portion 51O of the wiring portion 50O, and the other end is connected to the control chip 4H.

[0385] <Resin 7> Resin 7 covers at least semiconductor chips 4A to 4F, control chips 4G and 4H, a portion of each of the plurality of leads 1, and a portion of each of the plurality of leads 2. In this embodiment, resin 7 also covers diodes 49U, 49V, and 49W, a plurality of first wires 91A to 91F, and a plurality of second wires 92. The material of resin 7 is not particularly limited. The material of resin 7 is not particularly limited, and an insulating material such as epoxy resin or silicone gel may be used as appropriate.

[0386] As shown in Figure 2, the dimension DX of the resin 7 in the x direction is preferably 60 mm or less. The dimension DY of the resin 7 in the y direction is preferably 35 mm or less. As shown in Figure 1, the dimension DZ of the resin 7 in the z direction is preferably 6 mm or less. In the resin 7 of this embodiment, the dimension DX is approximately 57 mm, the dimension DY is approximately 30 mm, and the dimension DZ is approximately 5 mm.

[0387] In this embodiment, the resin 7 has a first surface 71, a second surface 72, a third surface 73, a fourth surface 74, a sixth surface 75, a sixth surface 76, a recess 710, a recess 720, a recess 731, a recess 732, a recess 733 and a recess 734.

[0388] The first surface 71 is a plane that intersects with the z direction, and in the illustrated example, is a plane that is perpendicular to the z direction. The first surface 71 faces the same side as the first surface 31 of the substrate 3. In the illustrated example, the second surface 72 faces the opposite side to the first surface 71 and faces the same side as the second surface 32 of the substrate 3.

[0389] The third surface 73 is located between the first surface 71 and the second surface 72 in the z direction, and in the example shown, is connected to the first surface 71 and the second surface 72. The third surface 73 is a surface that intersects with the x direction and faces the same side as the third surface 33 of the substrate 3. The fourth surface 74 is located between the first surface 71 and the second surface 72 in the z direction, and in the example shown, is connected to the first surface 71 and the second surface 72. The fourth surface 74 is a surface that intersects with the x direction, faces the opposite side to the third surface 73, and faces the same side as the fourth surface 34 of the substrate 3.

[0390] The sixth surface 75 is located between the first surface 71 and the second surface 72 in the z direction, and in the example shown, is connected to the first surface 71 and the second surface 72. The sixth surface 75 is a surface that intersects with the y direction and faces the same side as the fifth surface 35 of the substrate 3. The sixth surface 76 is located between the first surface 71 and the second surface 72 in the z direction, and in the example shown, is connected to the first surface 71 and the second surface 72. The sixth surface 76 is a surface that intersects with the x direction and faces the opposite side to the sixth surface 75 and faces the same side as the sixth surface 36.

[0391] The recess 710 is a portion recessed in the x direction from the third surface 73. The recess 710 reaches the first surface 71 and the second surface 72. The recess 720 is a portion recessed in the x direction from the fourth surface 74. The recess 720 reaches the first surface 71 and the second surface 72.

[0392] As shown in FIG. 4, the recesses 731, 732, 733, and 734 are recessed from the sixth surface 75 in the y direction. The recess 731 is located between the second portion 22Z of the lead 2Z and the second portion 22A of the lead 2A when viewed in the y direction. The recess 732 is located between the second portion 22A of the lead 2A and the second portion 22B of the lead 2B when viewed in the y direction. The recess 733 is located between the second portion 22B of the lead 2B and the second portion 22C of the lead 2C when viewed in the y direction. The recess 734 is located between the second portion 22C of the lead 2C and the second portion 22D of the lead 2D when viewed in the y direction.

[0393] <Circuit Configuration of Semiconductor Device A1> Next, the circuit configuration of the semiconductor device A1 will be described. 18, semiconductor device A1 has a configuration in which three switching arms 40U, 40V, and 40W are connected in parallel to one another. Switching arm 40U has semiconductor chips 4A and 4D, switching arm 40V has semiconductor chips 4B and 4E, and switching arm 40W has semiconductor chips 4C and 4F.

[0394] The drains of the semiconductor chips 4A to 4C are connected to each other and to the P terminal (lead 1A). The source of the semiconductor chip 4A is connected to the drain of the semiconductor chip 4D, the source of the semiconductor chip 4B is connected to the drain of the semiconductor chip 4E, and the source of the semiconductor chip 4C is connected to the drain of the semiconductor chip 4F. A node N1 between the source of the semiconductor chip 4A and the drain of the semiconductor chip 4D is connected to the U terminal (lead 1B). A node N2 between the source of the semiconductor chip 4B and the drain of the semiconductor chip 4E is connected to the V terminal (lead 1C). A node N3 between the source of the semiconductor chip 4C and the drain of the semiconductor chip 4F is connected to the W terminal (lead 1D). The source of the semiconductor chip 4D is connected to the NU terminal (lead 1E), the source of the semiconductor chip 4E is connected to the NV terminal (lead 1F), and the source of the semiconductor chip 4F is connected to the NW terminal (lead 1G).

[0395] Applied to the U terminal (lead 1B), V terminal (lead 1C) and W terminal (lead 1D) The voltage level applied to the NU terminal (Lead 1E), NV terminal (Lead 1F), and NW terminal (Lead 1G) is, for example, about 0V, which is lower than the voltage levels applied to the NW terminal (Lead 1B), V terminal (Lead 1C), and W terminal (Lead 1D). Semiconductor chips 4A to 4C constitute high-potential side transistors of a three-phase inverter circuit, and semiconductor chips 4D to 4F constitute low-potential side transistors of the three-phase inverter circuit.

[0396] The gates of the semiconductor chips 4A to 4C are each connected to the control chip 4G, and the sources of the semiconductor chips 4A to 43 are each connected to the control chip 4G. The gates of the semiconductor chips 4D to 46 are each connected to the control chip 4H.

[0397] The control chip 4G is electrically connected to the VBU terminal (Lead 2A), VBV terminal (Lead 2B), VBW terminal (Lead 2C), first VCC terminal (Lead 2D), HINU terminal (Lead 2E), HINV terminal (Lead 2F), HINW terminal (Lead 2G), and first GND terminal (Lead 2H). The first VCC terminal is a terminal that supplies a power supply voltage VCC to the control chip 4G. Gate signal voltages are applied to the HINU terminal, HINV terminal, and HINW terminal from an external gate drive circuit (not shown). The control chip 4G is a circuit for applying these gate signal voltages to the gates of the semiconductor chips 4A to 4C. The first GND terminal and second GND terminal (Lead 2O) are connected to each other inside the semiconductor device A1, more specifically, at a conductive portion 5 on the substrate 3.

[0398] The control chip 4H is electrically connected to the LINU terminal (Lead 2I), LINV terminal (Lead 2J), LINW terminal (Lead 2K), second VCC terminal (Lead 2L), FO terminal (Lead 2M), CIN terminal (Lead 2N), and second GND terminal (Lead 2O). The second VCC terminal is a terminal that supplies a power supply voltage VCC to the control chip 4H. Gate signal voltages are applied to the LINU terminal, LINV terminal, and LINW terminal from an external gate drive circuit. The control chip 4H is a circuit for applying these gate signal voltages to the gates of the semiconductor chips 4D to 4F.

[0399] The first voltage of the electrical signals applied to the HINU terminal (Lead 2E), the HINV terminal (Lead 2F), and the HINW terminal (Lead 2G) is lower than the second voltage (power supply voltage VCC) applied from the first VCC terminal (Lead 2D) to drive the control chip 4G. Also, the first voltage of the electrical signals applied to the LINU terminal (Lead 2I), the LINV terminal (Lead 2J), and the LINW terminal (Lead 2K) is lower than the second voltage (power supply voltage VCC) applied from the second VCC terminal (Lead 2L) to drive the control chip 4H.

[0400] FIG. 19 shows an example of the configuration of the control chips 4G, 4H that drive the switching arm 40U, for example, and shows an example of the configuration of a circuit (hereinafter referred to as a "control circuit GDC") that controls the switching arm 40U in the control chips 4G, 4H.

[0401] As shown in FIG. 19, the circuit of the control circuit GDC corresponding to the control chip 4G has, in order from the input side (HINU terminal side) to the output side (U terminal side), a resistor 461, a Schmitt trigger 462, a level shifter 463, a controller 464, a pulse generator 465, a level shifter 466, a filter circuit 467, an RS flip-flop circuit 468, and a driver 469.

[0402] Resistor 461 pulls down the HINU terminal to the ground end. Therefore, when the HINU terminal is in an open state, the upper input signal HINU as the gate signal voltage input from the gate drive circuit to the HINU terminal is at a low level (a logical level for turning off the semiconductor chip 4A), so that the semiconductor chip 4A is not turned on unintentionally.

[0403] The Schmitt trigger 462 transmits the upper input signal HINU input to the HINU terminal to the level shifter 463. A predetermined hysteresis is provided to the threshold voltage of the Schmitt trigger 462. This configuration can improve noise resistance.

[0404] The level shifter 463 level-shifts the output signal of the Schmitt trigger 462 to a voltage level (VCC-GND) suitable for input to the controller 464 and outputs the level-shifted signal. The controller 464 controls whether or not to transmit the output signal of the level shifter 463 to the pulse generator 465 (and thus whether or not to drive the semiconductor chip 4A) based on the abnormality signal input from the abnormality protection unit 480 or the external abnormality signal input from the FO terminal.

[0405] The pulse generator 465 generates an ON signal S based on the output signal of the controller 464. ON and off signal S OFF Specifically, the pulse generator 4 generates the pulse signals. 65 is triggered by the rising edge of the output signal of the controller 464 to generate an ON signal S ON The predetermined on-period T ON1 and the falling edge of the output signal of the controller 464 The OFF signal S OFF The predetermined on-period T ON2 The output signal of the controller 464 (a signal corresponding to the upper input signal HINU) is set to a high level only during the ON period T ON1 and on-period T ON2 is the ON signal S ON and off signal S OFF In other words, when the semiconductor device A1 is operating normally, at least the ON signal S ON and off signal S OFF When one of them is at high level, the other is at low level. become.

[0406] The level shifter 466 is a circuit that shifts the signal level and transmits it from the low potential block to the high potential block, between the high potential block including the filter circuit 467, the RS flip-flop circuit 468, and the driver 469 and the low potential block including the pulse generator 465. More specifically, the level shifter 466 receives the ON signal SON and off signal S OFF Each pulse signal is input. The level shifter 466 shifts the levels of these signals and outputs them as a first shifted signal and a second shifted signal to the filter circuit 467. The high potential block operates between the boost voltage VBU applied to the VBU terminal and the switch voltage VS applied to the U terminal.

[0407] The filter circuit 467 is a circuit that performs filtering on the first shifted signal and the second shifted signal input from the level shifter 466 and outputs the result to an RS flip-flop circuit 468 .

[0408] The RS flip-flop circuit 468 converts the first shifted signal filtered by the filter circuit 467 into a set signal S SET Set terminal (S terminal) and filter The second shifted signal filtered by the filter circuit 467 is the reset signal S RESET The reset terminal (R terminal) is input as an output signal, and the output signal S Q The RS flip-flop circuit 468 has an output terminal (Q terminal) that outputs a set signal S SET The falling edge of is used as a trigger to generate the output signal S Q is set to high level, and the reset signal S RESET The falling edge of is used as a trigger to generate the output signal S Q is set to low level. SET and reset signal S RESET are all input from the level shifter 466. .

[0409] The driver 469 generates an upper output signal HOU that corresponds to the output signal of the RS flip-flop circuit 468, and outputs the upper output signal HOU to the gate of the semiconductor chip 4A. The high level of the upper output signal HOU is the boost voltage VBU, and the low level is The switch voltage is VS.

[0410] The circuit of the control circuit GDC corresponding to the control chip 4H has, in order from the input side (LINU terminal side) to the output side (U terminal side), a resistor 471, a Schmitt trigger 472, a level shifter 473, a delay circuit 474, and a driver 475. In this embodiment, the controller 464 of the control chip 4G is provided between the level shifter 473 and the delay circuit 474. The controller of the control chip 4H may be provided separately from the controller 464 of the control chip 4G. In this case, the controller of the control chip 4H may be provided between the delay circuit 474 and the driver 475, and since the delay circuit 474 is not used, the semiconductor chip 4D can be quickly turned off when an abnormality occurs.

[0411] The resistor 471 pulls down the LINU terminal to the ground end. Therefore, when the LINU terminal is in an open state, the lower input signal LINU as the gate signal voltage from the gate drive circuit becomes low level (a logical level for turning off the semiconductor chip 4D), so that the semiconductor chip 4D is not turned on unintentionally.

[0412] The Schmitt trigger 472 transmits the lower input signal LINU input to the LINU terminal to the level shifter 473. A predetermined hysteresis is provided to the threshold voltage of the Schmitt trigger 472. This configuration can improve noise resistance.

[0413] The level shifter 473 level-shifts the output signal of the Schmitt trigger 472 to a voltage level (VCC-GND) suitable for input to the controller 464 and outputs the signal.

[0414] The controller 464 controls whether or not to apply the output signal of the delay circuit 474 to the driver 475 (and therefore whether or not to drive the semiconductor chip 4D) based on the abnormality signal input from the abnormality protection unit 480 or the external abnormality signal input from the FO terminal.

[0415] The delay circuit 474 imparts a predetermined delay (corresponding to the circuit delay caused by the pulse generator 465, level shifter 466, and RS flip-flop circuit 468 of the control chip 4G) to the output signal of the controller 464 and transmits it to the driver 475.

[0416] The driver 475 outputs the lower-side output signal LOU to the gate of the semiconductor chip 4D based on the output signal of the controller 464 delayed by the delay circuit 474. The high level of the lower-side output signal LOU is the power supply voltage VCC, and the low level is the ground voltage VGND.

[0417] The abnormality protection unit 480 includes a temperature protection circuit (TSD [Thermal Shut Down] circuit) 481, a low The circuit has a voltage malfunction prevention circuit (UVLO circuit) 482, a low-pass filter circuit 483, a current limiting circuit 484, a short-to-power protection circuit 485, an abnormality signal generating circuit 486, a transistor 487, a Schmitt trigger 488, and a level shifter 489.

[0418] When the junction temperature of the semiconductor device A1 exceeds a predetermined threshold temperature, the temperature protection circuit 481 switches the temperature protection signal from a normal logic level (for example, low level) to an abnormal logic level (for example, high level).

[0419] When the power supply voltage VCC falls below a predetermined threshold voltage, the undervoltage lockout circuit 482 switches the lockout prevention signal from a normal logic level (for example, low level) to an abnormal logic level (for example, high level).

[0420] The low-pass filter circuit 483 is electrically connected to the detection terminal C IN and outputs the detection voltage C IN to the current limiting circuit 484 and the power short protection circuit 485.

[0421] When the detection voltage CIN exceeds the first threshold, the current limiting circuit 484 switches the current limiting signal from a normal logic level (for example, a low level) to an abnormal logic level (for example, a high level).

[0422] When the detection voltage CIN exceeds a second threshold, the power supply short protection circuit 485 switches the power supply short protection signal from a normal logic level (e.g., a low level) to an abnormal logic level (e.g., a high level). An example of the second threshold is a voltage value higher than the first threshold.

[0423] The abnormality signal generation circuit 486 monitors the temperature protection signal input from the temperature protection circuit 481, the malfunction prevention signal input from the low voltage lockout circuit 482, the current limiting signal input from the current limiting circuit 484, the power short protection signal input from the power short protection circuit 485, and the external abnormality signal input from the FO terminal. If an abnormality occurs in the current limiting circuit 484, the abnormality signal generation circuit 486 switches the first abnormality signal from a normal logic level (e.g., low level) to an abnormality logic level (e.g., high level). If an abnormality occurs in any one of the temperature protection circuit 481, the low voltage lockout circuit 482, and the power short protection circuit 485, or if an external abnormality signal is input, the abnormality signal generation circuit 486 switches the second abnormality signal from a normal logic level (e.g., low level) to an abnormality logic level (e.g., high level). The abnormality signal generation circuit 486 outputs the first abnormality signal and the second abnormality signal to the controller 464.

[0424] When the first abnormality signal is input, the controller 464 limits the current flowing through at least one of the semiconductor chips 4A and 4D. When the second abnormality signal is input, the controller 464 turns off both the semiconductor chips 4A and 4D. When the current limiting signal is input, the abnormality signal generating circuit 486 switches the first abnormality signal to the abnormality logic level, and when the temperature protection signal, malfunction prevention signal, power short protection signal, or external abnormality signal is input, the controller 464 switches the second abnormality signal to the abnormality logic level.

[0425] The transistor 487 forms an open-drain output stage for outputting an external abnormality signal from the FO terminal. When no abnormality occurs in the semiconductor device A1, the transistor 487 is turned off by the abnormality signal generating circuit 486, and the external abnormality signal is set to a high level. On the other hand, when an abnormality occurs in the semiconductor device A1, the transistor 487 is turned on by the abnormality signal generating circuit 486, and the external abnormality signal is set to a low level.

[0426] The Schmitt trigger 488 transmits an external abnormality signal input to the FO terminal (for example, an external abnormality signal output from the FO terminal of another semiconductor device) to the level shifter 489. A predetermined hysteresis is provided to the threshold voltage of the Schmitt trigger 488. This configuration can improve noise resistance.

[0427] The level shifter 489 level-shifts the output signal of the Schmitt trigger 488 to a voltage level (VCC-GND) suitable for input to the controller 464 and outputs the signal.

[0428] The bootstrap circuit 490U includes a diode 49U having an anode connected to a terminal to which the power supply voltage VCC is applied via a resistor 491U, and a boot capacitor 492U provided between the cathode of the diode 49U and the source of the semiconductor chip 4A. The boot capacitor 492U is electrically connected to the VBU terminal and the U terminal.

[0429] The bootstrap circuit 490U generates a boost voltage VB (a drive voltage for a high-potential block including the driver 469) at a connection node (U terminal) between the diode 49U and the boot capacitor 492U. The resistor 491U limits the current supplied to the diode 49U from the external power supply via the first VCC terminal, thereby limiting the charging current to the boot capacitor 492U.

[0430] When the semiconductor chip 4A is turned off and the semiconductor chip 4D is turned on, causing the switch voltage VS appearing at the U terminal to be set to a low level (GND), a current flows from the application terminal of the power supply voltage VCC through the diode 49U, the boot capacitor 492U, and the semiconductor chip 4D. As a result, the boot capacitor 492U provided between the VBU terminal and the U terminal is charged. At this time, the boost voltage VB appearing at the VBU terminal (i.e., the charging voltage of the boot capacitor 492U) becomes a voltage value (VCC-Vf) obtained by subtracting the forward drop voltage Vf of the diode 49U from the power supply voltage VCC.

[0431] On the other hand, when the boot capacitor 492U is charged, the semiconductor chip 4A is turned on and the semiconductor chip 4D is turned off, thereby raising the switch voltage VS from low level (GND) to high level (HV). The boost voltage VB is raised to a voltage value (=HV+VCC-Vf) that is higher than the high level (HV) of the switch voltage VS by the charging voltage (VCC-Vf) of the boot capacitor 493U. Therefore, by using such boost voltage VB as the drive voltage for the high-potential block (RS flip-flop circuit 468 and driver 469) and the level shifter 466, it is possible to perform on / off control (especially on control), which is the switching operation of the semiconductor chip 4A.

[0432] <Method of Manufacturing Semiconductor Device A1> Next, an example of a method for manufacturing the semiconductor device A1 will be described below with reference to Figures 20 to 30. Note that the manufacturing method described below is one means for realizing the semiconductor device A1, and is not limited to this.

[0433] As shown in Figure 20, the manufacturing method of this example includes a conductive portion forming process (step S1), a lead bonding material preparing process (step S2), a lead frame bonding process (step S3), a chip bonding material preparing process (step S4), a semiconductor chip mounting process (step S5), a control chip mounting process (step S6), a first wire connecting process (step S7), a second wire connecting process (step S8), a resin forming process (step S9), and a frame cutting process (step S10).

[0434] In the conductive portion forming step (step S1), a substrate 3 is prepared as shown in FIG. 21. The substrate 3 is made of, for example, ceramic. Next, as shown in FIG. 22, a conductive portion 5 and a plurality of joints 6 are formed on a first surface 31 of the substrate 3. In this example, the conductive portion 5 and the plurality of joints 6 are formed all at once. For example, a metal paste is printed and then fired to obtain the conductive portion 5 and the plurality of joints 6 containing a metal such as silver (Ag) as a conductive material.

[0435] In the lead bonding material preparation step (step S2), bonding paste 810 and conductive bonding paste 820 are printed on conductive portion 5 and a plurality of bonding portions 6 as shown in Fig. 23. The bonding paste 810 and conductive bonding paste 820 are, for example, Ag paste or solder paste.

[0436] In the lead frame bonding step (step S3), a lead frame 10 is prepared as shown in FIG. 24. The lead frame 10 includes a plurality of leads 1 and a plurality of leads 2, and further includes a frame 19 and a frame 29. The frame 19 is a frame that holds the plurality of leads 1 and 2. 1 and supports these leads 1. The frame 29 is connected to the plurality of leads 2 and supports these leads 2. Note that the shape of the lead frame 10 is not limited in any way. Next, the plurality of leads 1 are made to face the plurality of bonding portions 6 via the bonding paste 810. Furthermore, the plurality of leads 2 are made to face the conductive portion 5 via the conductive bonding paste 820. For example, by heating and then cooling the bonding paste 810 and the conductive bonding paste 820, the bonding material 81 is formed by the bonding paste 810, and the conductive bonding material 82 is formed by the conductive bonding paste 820. As a result, the plurality of leads 1 are bonded to the plurality of bonding portions 6 via the bonding material 81, and the plurality of leads 2 are bonded to the conductive portion 5 via the conductive bonding material 82.

[0437] In the chip bonding material preparation step (step S4), for example, as shown in Fig. 25, conductive bonding paste 830 is printed on main surface 111A of first portion 11A, main surface 111B of first portion 11B, main surface 111C of first portion 11C, and main surface 111D of first portion 11D. The conductive bonding paste 830 is, for example, Ag paste or solder paste.

[0438] 26, in the semiconductor chip mounting process (step S5), the semiconductor chips 4A to 4F are each attached to a conductive bonding paste 830. Then, for example, the conductive bonding paste 830 is heated and then cooled, whereby a conductive bonding material 83 is formed by the conductive bonding paste 830. As a result, the semiconductor chips 4A to 4F are bonded to the first parts 11A to 11D via the conductive bonding material 83, respectively.

[0439] In the control chip mounting process (step S6), as shown in FIG. 27, a paste containing a metal is printed on the first base portion 55 and the second base portion 56 of the conductive portion 5. This paste is, for example, Ag paste or solder paste. Next, the control chip 4G and the control chip 4H are attached to this paste, respectively. Next, for example, by heating and then cooling the paste, the control chip 4G and the control chip 4H are bonded to the first base portion 55 and the second base portion 56 via conductive bonding material 84. Furthermore, by a similar process, the diodes 49U, 49V, and 49W are bonded to the wiring portions 50A, 50B, and 50C via conductive bonding material 85.

[0440] In the first wire connecting step (step S7), first wires 91A to 91F are connected as shown in Fig. 28. In the illustrated example, wire materials made of aluminum (Al) are connected in sequence by, for example, wedge bonding, thereby obtaining first wires 91A to 91F.

[0441] In the second wire connecting step (step S8), a plurality of second wires 92 are connected as shown in Fig. 29. In the illustrated example, wire materials made of gold (Au) are sequentially connected by, for example, a capillary bonding technique. As a result, a plurality of second wires 92 are obtained.

[0442] In the resin forming process (step S9), as shown in Fig. 30, for example, a part of the lead frame 10, a part of the substrate 3, the semiconductor chips 4A-4F, the control chips 4G and 4H, the diodes 49U, 49V, and 49W, the first wires 91A-91F, and the plurality of second wires 92 are enclosed in a mold. Next, a liquid resin material is injected into the space defined by the mold. Next, the resin material is cured to obtain resin 7.

[0443] In the frame cutting process (step S10), the lead frame 10 is cut at appropriate locations of the portions exposed from the resin 7. This separates the leads 1 and the leads 2. Thereafter, the leads 1 and the leads 2 are bent as necessary to obtain the semiconductor device A1g described above.

[0444] Next, the operation of the semiconductor device A1 will be described below.

[0445] According to this embodiment, the control chips 4G, 4H are disposed on conductive portions 5 formed on the substrate 3. By configuring the conductive paths to the control chips 4G, 4H using the conductive portions 5, it is possible to achieve thinner and denser conductive paths compared to configuring the conductive paths using, for example, metal leads. This can promote high integration of the semiconductor device A1. Furthermore, by employing leads 1A-1D with higher heat dissipation properties than the substrate 3, it is possible to suppress a decrease in heat dissipation from the semiconductor chips 4A-4F that may be reduced by employing the substrate 3.

[0446] Bonding portions 6A to 6D are formed on the substrate 3, and the leads 1A to 1D are bonded to the substrate 3 via the bonding portions 6A to 6D. For example, the surfaces of the bonding portions 6A to 6D can be finished to be smoother than the surface roughness of the main surface 31 of the substrate 3, which is made of ceramic. This makes it possible to prevent unintended minute gaps from being generated in the heat transfer path from the leads 1A to 1D to the substrate 3, and further promotes heat dissipation from the semiconductor chips 4A to 4F, etc.

[0447] By exposing the leads 1A to 1D from the resin 7, a conductive path from the outside to the semiconductor chips 4A to 4F is formed, and the heat dissipation characteristics of the semiconductor chips 4A to 4F can be further ensured.

[0448] The second surface 32 of the substrate 3 is exposed from the resin 7. This allows the heat transferred from the semiconductor chips 4A to 4F etc. to the substrate 3 to be dissipated to the outside more efficiently.

[0449] By including the same conductive material in the conductive portion 5 and the bonding portions 6A to 6D, it is possible to form the conductive portion 5 and the bonding portions 6A to 6D collectively on the substrate 3. This is preferable for improving the manufacturing efficiency of the semiconductor device A1.

[0450] The leads 2 are joined to the conductive portion 5 via a conductive bonding material 82. This allows the leads 2 to be more firmly fixed to the conductive portion 5. Also, the resistance between the leads 2 and the conductive portion 5 can be reduced.

[0451] 15 and 16, the interval G23 between the leads 2D to 2N is smaller than the interval G54 between the second portions 52D to 52N shown in Fig. 16. This allows the leads 2D to 2N to be arranged closer together.

[0452] The first portions 21A to 21N of the leads 2A to 2N are rectangular with the y direction as the longitudinal direction, which allows the bonding area of ​​the leads 2A to 2N to be increased while reducing the intervals G21, G22, G23 between the leads 2A to 2N.

[0453] The first portions 21O, 21P of the leads 2O, 2P are arranged side by side in the y direction and overlap with the first portion 21N when viewed in the y direction. This makes it possible to prevent the substrate 3 from becoming larger while ensuring the number of leads 2.

[0454] When viewed in the x direction, the control chips 4G, 4H are disposed between the semiconductor chips 4A to 4F and the plurality of leads 2. This allows the plurality of leads 2, which are electrically connected to the control chips 4G, 4H via the conductive portions 5, to be spaced apart from the semiconductor chips 4A to 4F, and the plurality of leads 2 can be insulated from the semiconductor chips 4A to 4F.

[0455] The semiconductor chips 4A to 4C are directly bonded to the leads 1A by conductive bonding material 83. That is, semiconductor chip 4D is directly bonded to lead 1B with conductive bonding material 83, semiconductor chip 4E is directly bonded to lead 1C with conductive bonding material 83, and semiconductor chip 4F is directly bonded to lead 1D with conductive bonding material 83. As a result, the semiconductor chips 4A to 4F and the leads 1A to 1D are electrically connected, and heat from the semiconductor chips 4A to 4F can be more efficiently transferred to the leads 1A to 1D.

[0456] The semiconductor chip 4A is connected to the lead 1B by a first wire 91A. The semiconductor chip 4B is connected to the lead 1C by a first wire 91B. The semiconductor chip 4C is connected to the lead 1D by a first wire 91C. The semiconductor chip 4D is connected to the lead 1E by a first wire 91D. The semiconductor chip 4E is connected to the lead 1F by a first wire 91A. The semiconductor chip 4F is connected to the lead 1G by a first wire 91A. With this configuration, it is possible to suppress an increase in resistance in the conduction paths between the semiconductor chips 4A to 4F and the leads 1B to 1G that are spaced apart from each other.

[0457] The control chips 4G, 4H are bonded to the conductive portion 5 formed on the substrate 3 by a conductive bonding material 84. This allows the control chips 4G, 4H and the conductive portion 5 to be electrically connected.

[0458] The control chip 4G is connected to the conductive portion 5 by a second wire 92G, and the control chip 4H is connected to the conductive portion 5 by a second wire 92H. This allows the control chips 4G and 4H to be electrically connected to portions of the conductive portion 5 that are spaced apart from the control chips 4G and 4H, respectively.

[0459] When a ceramic such as alumina (Al2O3), silicon nitride (SiN), aluminum nitride (AlN), or zirconia-containing alumina is selected as the material of the substrate 3 and the thickness of the substrate 3 is set to, for example, about 0.1 mm to 1.0 mm, the conductive portion 5 and the bonding portion 6 can be seen through the substrate 3 from the second surface 32 side of the substrate 3. This makes it possible to check, after manufacturing the semiconductor device A1, whether the conductive portion 5 or the bonding portion 6 has an unintended, irregular shape or the like by visual inspection from the outside without destroying the semiconductor device. Note that, as long as the shape of at least a portion of the conductive portion 5 is visible from the outside, the material and thickness of the substrate 3 are not limited to those described above and can be selected from a variety of materials.

[0460] The figures from Figure 31 onwards show modified examples and other embodiments of the present invention. In these figures, elements that are the same as or similar to those in the above embodiment are given the same reference numerals as those in the above embodiment.

[0461] <First Modification of First Embodiment> 31 shows a first modified example of the semiconductor device A1. The semiconductor device A11 of this modified example differs from the above-described embodiment in the configuration of semiconductor chips 4A to 4F. The semiconductor device A11 also includes diodes 41A to 41F.

[0462] <Semiconductor chips 4A to 4F> In this modification, the semiconductor chips 4A to 4F are transistors made of IGBTs. Fig. 32 shows an example of the detailed structure of the semiconductor chip 4A. Since the semiconductor chips 4A to 4F have the same structure, the structure of the semiconductor chip 4A will be described below, and a description of the structures of the semiconductor chips 4B to 4F will be omitted. Note that the structure of the semiconductor chips 4A to 4F is not limited to the structure shown in Fig. 32, and various modifications are possible.

[0463] The semiconductor chip 4A of this modification is a trench gate type IGBT. A includes an n-type semiconductor substrate 420. The semiconductor substrate 420 is, for example, a silicon substrate, and has a front surface 420A and a back surface 420B on the opposite side. A unit cell 421 that constitutes a part of the semiconductor chip 4A is fabricated in the surface region of this semiconductor substrate 420.

[0464] The semiconductor substrate 420 is formed with the following layers in order from the rear surface 420B side: + collector region 422, n + The semiconductor substrate 420 includes a p-type buffer region 423 and an n-type drift region 424. The collector region 422 and the buffer region 423 are formed in the back surface region of the semiconductor substrate 420. The collector region 422 is exposed from a back surface 420B of the semiconductor substrate 420. The collector region 422 contains B (boron) as a p-type impurity. The buffer region 423 is formed on the collector region 422 so as to be in contact with the collector region 422. The drift region 424 is formed using a portion of the semiconductor substrate 420. A portion of the drift region 424 is exposed from a front surface 420A of the semiconductor substrate 420 (not shown). The buffer region 423 and the drift region 424 each contain one of P (phosphorus), As (arsenic), or Sb (antimony) as an n-type impurity.

[0465] A plurality of gate trenches 425 are formed at intervals in the surface region of the semiconductor substrate 420. Each gate trench 425 penetrates the base region 429 and has a bottom located in the drift region 424. A gate electrode 427 is buried in each gate trench 425 via a gate insulating film 426. On the sides of the plurality of gate trenches 425, n-type insulating films are provided in order from the front surface 420A side to the back surface 420B side of the semiconductor substrate 420. + Type of emitter Area 428, p - The base region 429 of the mold and the drift region 424 are formed .

[0466] The base region 429 is shared by one gate trench 425 and the other gate trench 425. The emitter region 428 is formed along one side surface and the other side surface of the gate trench 425 so as to be exposed from the surface 420A of the semiconductor substrate 420. The emitter region 428 contains one of P (phosphorus), As (arsenic), and Sb (antimony) as an n-type impurity. The surface region of the base region 429 is provided with p-type impurities sandwiched between the emitter regions 428. + A contact region 430 is formed in the base region 429. The contact region 430 contains B (boron) as a p-type impurity.

[0467] The region between the emitter region 428 and the drift region 424 in the base region 429 is a channel region 431, which forms a plurality of unit cells 421 that constitute a part of the semiconductor chip 4A. Each unit cell 421 is defined as a region sandwiched between the center line of one gate trench 425 and the center line of the other gate trench 425.

[0468] An insulating film 432 made of, for example, silicon oxide (SiO2) is formed on the surface 420A of the semiconductor substrate 420 so as to cover the gate trench 425. A contact hole 432a is formed to expose a part of the emitter region 428 and the contact region 430. An emitter electrode 433 made of, for example, Ti / TiN is formed on the insulating film 432. The emitter electrode 433 extends from above the insulating film 432 into the contact hole 432a and is electrically connected to the emitter region 428 and the contact region 430 within the contact hole 432a.

[0469] A collector electrode 434 made of, for example, aluminum (AlSiCu, AlCu, etc.) is formed on a rear surface 420B of the semiconductor substrate 420. The collector electrode 434 is electrically connected to the collector region 422.

[0470] <Diodes 41A to 41F> Next, an example of the detailed structure of diodes 41A to 41F will be described with reference to Figures 33 and 34. Since diodes 41A to 46F have the same structure, the structure of diode 41A will be described below, and a description of the structures of diodes 42B to 46F will be omitted. The structures of diodes 41A to 46F are not limited to those shown in Figures 33 and 34, and various modifications are possible.

[0471] Diode 41A is n + type (for example, n-type impurity concentration is 1e18 to 1e21 cm -3 ) silicon substrate 440. A cathode electrode 441 is formed on the back surface of silicon substrate 440 so as to cover the entire surface. Cathode electrode 441 is made of a metal (for example, gold (Au), nickel (Ni), silicide, cobalt (Co) silicide, etc.) that is in ohmic contact with n-type silicon.

[0472] The surface of the silicon substrate 440 is provided with n atoms having a lower concentration than the silicon substrate 440. - type (for example , n-type impurity concentration is 1e15~1e17cm -3 ) is laminated on the epitaxial layer 442 (semiconductor layer). The thickness of the epitaxial layer 442 is, for example, 2 μm to 20 μm.

[0473] The surface of the epitaxial layer 442 is provided with a film made of, for example, silicon oxide (SiO2). A field insulating film 443 is laminated on the insulating film 443. The thickness of the field insulating film 443 is, for example, 1000 Å or more, preferably 7000 Å to 40000 Å. The field insulating film 443 may be formed of other insulating materials such as silicon nitride (SiN).

[0474] The field insulating film 443 has an opening 444 that exposes the central portion of the epitaxial layer 442. A plurality of trenches 445 are formed in the surface portion of the central portion of the epitaxial layer 442 by digging down the epitaxial layer 442 from the surface. Each trench 445 is a vertical groove extending in a predetermined direction. The bottom surface of the trench 445 is a plane along the surface of the epitaxial layer 442. Therefore, the cross section of each trench 445 is approximately rectangular. In this embodiment, seven trenches 445 extend in parallel at a predetermined interval. That is, the seven trenches 445 are formed in a striped pattern in a plan view.

[0475] A mesa portion 446 is formed in a surface portion of the epitaxial layer 442 in a portion sandwiched between adjacent trenches 445. When the trenches 445 have a substantially rectangular cross section, the mesa portion 446 accordingly has a substantially rectangular cross section. Each mesa portion 446 has two sidewall surfaces (sidewall surfaces of the trenches 445) that rise, for example, substantially vertically from one side edge of the bottom surfaces of the two adjacent trenches 445, and a top surface (the surface of the epitaxial layer 442) that connects the two sidewall surfaces.

[0476] An anode electrode 447 is formed on the epitaxial layer 442. The anode electrode 447 fills the inside of the opening 444 of the field insulating film 443 and protrudes outward from the opening 444 so as to cover a peripheral portion 448 of the opening 444 in the field insulating film 443. In other words, the peripheral portion 448 of the field insulating film 443 is sandwiched from above and below along its entire periphery by the epitaxial layer 442 and the anode electrode 447. The anode electrode 447, which covers the peripheral portion 448 of the field insulating film 443, protrudes beyond the edge of the opening 444 of the field insulating film 443 by, for example, 10 μm or more, preferably 10 μm to 100 μm.

[0477] The anode electrode 447 has a multilayer structure (two-layer structure in this embodiment) including a Schottky metal 449 joined to the epitaxial layer 442 in the opening 444 of the field insulating film 443 and a contact metal 450 laminated on the Schottky metal 449.

[0478] The Schottky metal 449 is made of a metal (e.g., titanium (Ti), molybdenum (Mo), palladium (Pd), etc.) that forms a Schottky junction with N-type silicon. Titanium is used for the Schottky metal 449 in this embodiment. The Schottky metal 449 is formed so as to be in contact with the surface of the epitaxial layer 442, including the inner wall surfaces (bottom surface and two sidewall surfaces) of the trench 445. Therefore, the Schottky metal 449 is in contact with the surface of the epitaxial layer 442 on the inner wall surfaces of all trenches 445 and outside the trenches 445. The Schottky metal 449 also covers the entire inner wall surfaces of each trench 445 and extends continuously to the outside of the trenches 445. In other words, the Schottky metal 449 is in contact with the surface of the epitaxial layer 442 exposed through the openings 444 in the field insulating film 443 so as to completely cover the entire surface. The Schottky metal 449 of this embodiment includes a bottom portion 449a in contact with the bottom surface of the trench 445, a side portion 449b in contact with the sidewall surface of the trench 445 (the sidewall surface of the mesa portion 446), and a top portion 449c in contact with the top surface of the mesa portion 446.

[0479] 34, the junction surface (Schottky junction surface) S between the Schottky metal 449 and the surface of the epitaxial layer 442 is formed to have an uneven cross section in the region inside the opening 444 of the field insulating film 443. Therefore, the area of ​​the Schottky junction surface Ss is larger than the apparent area of ​​the epitaxial layer 442 in a plan view along the normal direction of the surface of the epitaxial layer 442 (the portion extending horizontally in FIG. 34). More specifically, the Schottky junction surface Ss includes a bottom surface portion Ss1 in contact with the bottom surface of the trench 445, a side surface portion Ss2 in contact with the sidewall surface of the trench 445 (the sidewall surface of the mesa portion 446), and a top surface portion Ss3 in contact with the top surface of the mesa portion 446. When the trench 445 has a substantially rectangular cross section, the area of ​​the Schottky junction surface Ss can be increased by the amount of the side surface portion Ss2 compared to when the trench 445 is not formed.

[0480] The Schottky metal 449 bonded to the epitaxial layer 442 forms a Schottky barrier (potential barrier) of, for example, 0.52 eV to 0.9 eV between it and the silicon semiconductor that constitutes the epitaxial layer 442. The thickness of the Schottky metal 449 in this embodiment is 0.02 μm to 0.2 μm.

[0481] The contact metal 450 is a portion of the anode electrode 447 that is exposed on the outermost surface of the diode 41A and to which the first wire 91A and the like are bonded. That is, the contact metal 450 constitutes the anode electrode pad of the diode 41A. The contact metal 450 is made of, for example, aluminum (Al). In this embodiment, the thickness of the contact metal 450 is, for example, 0.5 μm to 5 μm. The contact metal 450 is embedded in each trench 445 so as to be in contact with the Schottky metal 449 covering the inner wall surface of each trench 445. That is, the contact metal 450 is in contact with a bottom surface 449a, two side surfaces 449b, and a top surface 449c of the Schottky metal 449. Therefore, the contact metal 450 is formed to have an uneven cross section on the side of each trench 445 that is in contact with the Schottky metal 449. On the other hand, the surface of contact metal 450 opposite to the side in contact with Schottky metal 449 is formed flat along the surface of epitaxial layer 442 (excluding the inner wall surface of trench 445).

[0482] When the Schottky metal 449 is made of titanium, a titanium nitride (TiN) layer is preferably interposed between the Schottky metal 449 and the aluminum contact metal 450. The titanium nitride layer bonds the titanium of the Schottky metal 449 to the aluminum of the contact metal 450, ensures electrical conductivity between the titanium and aluminum, and functions as a barrier layer that suppresses interdiffusion of titanium and aluminum. Such a barrier layer protects the Schottky junction surface Ss by suppressing or preventing the material of the contact metal 450 from diffusing into the Schottky metal 449.

[0483] A surface protection film (not shown) may be formed on the outermost surface of the diode 41A. In this case, an opening that exposes the contact metal 450 is preferably formed in the center of the surface protection film. The first wire 91A is bonded to the contact metal 450 through this opening.

[0484] A guard ring 451 made of a p-type diffusion layer is formed on a surface portion of the epitaxial layer 442 so as to be in contact with the Schottky metal 449. In a plan view, the guard ring 451 is formed along the contour of the opening 444 so as to straddle the inside and outside of the opening 444 of the field insulating film 443. Therefore, the guard ring 451 has an inner portion 451a that extends inward from the opening 444 of the field insulating film 443 and is in contact with an outer edge portion 449d that is an end portion of the Schottky metal 449 in the opening 444, and an outer portion 451b that extends outward from the opening 444 and faces the anode electrode 447 (the Schottky metal 449 on the outer edge portion 448) across a peripheral portion 448 of the field insulating film 443. The depth of the guard ring 451 from the surface of the epitaxial layer 442 is, for example, 0.5 μm to 8 μm.

[0485] Guard ring 451, formed across opening 444 in field insulating film 443, covers the boundary between peripheral edge 448 of field insulating film 443 and Schottky metal 449 from the epitaxial layer 442 side. Without guard ring 451, when a reverse bias is applied to diode 41A, an electric field concentrates at the boundary, making leakage more likely to occur. In diode 41A, because guard ring 451 covers the boundary, a depletion layer spreading from guard ring 451 when a reverse bias is applied can alleviate electric field concentration, thereby suppressing leakage. This improves the breakdown voltage of diode 41A.

[0486] As shown in FIG. 31 , in this modification, the main surface 111A has three first regions Ra, Rb, and Rc and three second regions R1a, R1b, and R1c partitioned by grooves 1112A. The three first regions Ra, Rb, and Rc are located on the lead 2 side in the y direction. The shapes of the three first regions Ra, Rb, and Rc are not particularly limited, and in the illustrated example, they are rectangular when viewed in the z direction and elongated in the y direction. The three first regions Ra, Rb, and Rc overlap each other when viewed in the x direction. Furthermore, in the illustrated example, the three first regions Ra, Rb, and Rc are approximately aligned with each other when viewed in the x direction. Note that "approximately aligned with each other" when viewed in the x direction refers to, for example, whether they completely match each other or whether they deviate within ±5% of their representative dimensions (the y-direction dimensions of the first regions Ra, Rb, and Rc).

[0487] The three second regions R1a, R1b, and R1c are located on the opposite side of the lead 2 from the three first regions Ra, Rb, and Rc in the y direction. The shapes of the three second regions R1a, R1b, and R1c are not particularly limited, and in the illustrated example, they are rectangular when viewed in the z direction. The three second regions R1a, R1b, and R1c overlap each other when viewed in the x direction. Furthermore, in the illustrated example, the three second regions R1a, R1b, and Rc1 are approximately aligned with each other when viewed in the x direction. Note that "approximately aligned" when viewed in the x direction refers to, for example, whether they are completely aligned with each other or have a deviation within ±5% of the representative dimension (the y-direction dimension of the second regions R1a, R1b, and R1c).

[0488] The sizes of the three first regions Ra, Rb, and Rc and the three second regions R1a, R1b, and R1c are not particularly limited. In the illustrated example, the dimension y1 in the y direction of the first regions Ra, Rb, and Rc is larger than the dimension y2 in the y dire...

Claims

1. an insulating substrate including a first surface and a second surface; a conductive portion formed on the first surface of the substrate; a plurality of semiconductor chips mounted on the first surface and performing switching operations in response to input control signals; a control chip that generates the control signals and is connected to the plurality of semiconductor chips; a plurality of first leads to which one or more of the plurality of semiconductor chips are electrically connected; a plurality of second leads electrically connected to the control chip; a sealing resin that covers at least a portion of the plurality of first leads and at least a portion of the plurality of second leads, the substrate, the conductive portion, and the plurality of semiconductor chips; The sealing resin is a first side surface from which the plurality of first leads are exposed; a second side surface different from the first side surface and from which the second leads are exposed; a plurality of recesses formed on the second side surface and positioned between some of the second leads; Semiconductor device.

2. the conductive portion includes a plurality of wiring portions, At least some of the wiring portions are disposed in the middle of a path connecting the semiconductor chip and the control chip, The semiconductor device according to claim 1 , wherein the minimum spacing between said plurality of wiring portions is smaller than the minimum spacing between said plurality of first leads.

3. The semiconductor device according to claim 1 , wherein a minimum distance between said plurality of first leads is greater than a minimum distance between said plurality of second leads.

4. The semiconductor device according to claim 1 , wherein said plurality of semiconductor chips are MOSFETs formed on a silicon carbide substrate.

5. 5. The semiconductor device according to claim 4, wherein the gate of said MOSFET has a trench structure.

6. 2. The semiconductor device according to claim 1, wherein the height of said plurality of semiconductor chips and the height of said control chip are different when viewed from a direction perpendicular to the thickness direction.

7. The semiconductor device according to claim 6 , wherein the conductive portion has a thickness smaller than a thickness of the first lead.

8. 2. The semiconductor device according to claim 1, wherein said substrate is made of ceramics containing any one of alumina, silicon nitride, aluminum nitride, and alumina containing zirconia.

9. the semiconductor chip has a first electrode and a control electrode formed on a main surface of the chip, and a second electrode formed on a rear surface of the chip; 2. The semiconductor device according to claim 1, wherein the plurality of semiconductor chips have the first electrode of a high potential side switching element and the second electrode of a low potential side switching element connected in series between a first power supply and a second power supply.

10. 10. The semiconductor device according to claim 9, wherein said control chip includes a first integrated circuit element that controls an operation of said high potential side switching element, and a second integrated circuit element that controls an operation of said low potential side switching element.

11. The semiconductor device according to claim 10 , further comprising a plurality of boot diodes electrically connected to the first integrated circuit element.

12. The semiconductor device according to claim 1 , wherein the portions of the plurality of first leads exposed from the first side surface of the sealing resin are bent.

13. 2. The semiconductor device according to claim 1, wherein said plurality of semiconductor chips are SiC-MOSFETs and IGBTs having electrodes on their main and back surfaces, or GaN-MOSFETs having a plurality of electrodes on their main surfaces.

14. 2. The semiconductor device according to claim 1, wherein a first voltage level of the electrical signal applied to said second lead is lower than a second voltage level for driving said control chip.

15. Each of the plurality of semiconductor chips has an elongated rectangular shape having a longitudinal direction in a plan view, The semiconductor device according to claim 1 , wherein a longitudinal direction of one of said plurality of semiconductor chips is perpendicular to a longitudinal direction of the other semiconductor chips in a plan view.

16. The plurality of second leads include: a first pair of the second leads arranged consecutively without the recess therebetween; a second pair of the second leads arranged consecutively without the recess therebetween, The semiconductor device according to claim 1 , wherein at least a portion of the recess is located between the first pair of second leads and the second pair of second leads.

17. the second side surface has one end and the other end which are intersections of the second side surface and a side surface orthogonal to the second side surface in a plan view; 2. The semiconductor device according to claim 1, wherein the plurality of second leads include a third pair of second leads that are continuous without a recess between them, and are located closer to the one end than the recess that is located furthest from the one end in a planar view among the plurality of recesses.

18. 2. The semiconductor device according to claim 1, wherein the minimum distance between the exposed portions of the second leads adjacent to each other across the recess and exposed from the second side surface is smaller than the minimum distance between the exposed portions of the first leads facing the second leads adjacent to each other across the recess and exposed from the first side surface.

19. 2. The semiconductor device according to claim 1, wherein a maximum width of the portions of the second leads exposed from the second side surface is different from a maximum width of the portions of the first leads exposed from the first side surface.

20. 2. The semiconductor device according to claim 1, wherein the semiconductor chip has a first electrode and a control electrode formed on a main surface of the chip, and a second electrode formed on a back surface of the chip, and performs a switching operation between the first electrode and the second electrode in response to a signal output from the control chip and input to the control electrode.

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