Semiconductor manufacturing equipment, coating equipment and method for manufacturing semiconductor device

Abstract

To provide a technology capable of improving coating uniformity.SOLUTION: A semiconductor device manufacturing equipment comprises coating equipment having a syringe for storing paste, a nozzle holder provided at the tip of the syringe, a nozzle provided on the nozzle holder, and a heating section for heating the nozzle holder, and applying the paste to a coating target object, and a control unit configured to adjust the temperature of the nozzle holder via the heating section and to apply the paste from the nozzle onto the coating target object.SELECTED DRAWING: Figure 6

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor manufacturing apparatus, and is applicable to, for example, a semiconductor manufacturing apparatus that applies paste onto a semiconductor chip. [Background technology]

[0002] As one step in the manufacturing process of a semiconductor device, a workpiece separated from a wafer is picked up and bonded to a semiconductor chip coated with a paste adhesive (for example, JP 2022-150045 A). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2022-150045 Summary of the Invention [Problem to be solved by the invention]

[0004] When the paste is applied to an object to be coated, the coating uniformity may decrease.

[0005] An object of the present disclosure is to provide a technology capable of improving coating uniformity. Other objects and novel features will become apparent from the description of this specification and the accompanying drawings. [Means for solving the problem]

[0006] A brief summary of representative aspects of this disclosure is as follows. That is, the semiconductor manufacturing apparatus comprises an application device having a syringe in which paste is stored, a nozzle holder provided at the tip of the syringe, a nozzle provided at the nozzle holder, and a heating unit that heats the nozzle holder, and applies the paste to an object to be applied, and a control unit that is configured to adjust the temperature of the nozzle holder using the heating unit and apply the paste from the nozzle onto the object to be applied. [Effects of the Invention]

[0007] According to the present disclosure, it is possible to improve coating uniformity. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a top view showing an outline of a die bonder according to an embodiment. [Figure 2] FIG. 2 is a cross-sectional view showing an outline of the die supply section shown in FIG. [Figure 3] FIG. 3 is a side view showing an outline of the preform part shown in FIG. [Figure 4] FIG. 4 is a side view showing an outline of the die supply section and bonding section shown in FIG. [Figure 5] FIG. 5 is a flowchart showing a die bonding process using the die bonder shown in FIG. [Figure 6] FIG. 6 is a side view showing the coating device and the preform stage. [Figure 7] FIG. 7 is a top view showing an example of the configuration of a substrate in an embodiment. [Figure 8] FIG. 8 is a top view showing an example of paste application. [Figure 9] FIG. 9 shows the temperature transition of the paste inside the nozzle. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments will be described with reference to the drawings. However, in the following description, the same components will be assigned the same reference numerals, and repeated description may be omitted. Note that, in order to clarify the description, the width, thickness, shape, etc. of each part may be shown schematically compared to the actual embodiment. Furthermore, the dimensional relationships, ratios, etc. of each element between multiple drawings do not necessarily match.

[0010] The configuration of a die bonder (die bonding apparatus) as one embodiment of semiconductor manufacturing equipment will be described with reference to Figs. 1 to 4. Fig. 1 is a top view showing an outline of the die bonder in the embodiment. Fig. 2 is a cross-sectional view showing an outline of the die supply unit shown in Fig. 1. Fig. 3 is a side view showing an outline of the preform unit shown in Fig. 1. Fig. 4 is a side view showing an outline of the die supply unit and bonding unit shown in Fig. 1.

[0011] 1, die bonder 1 broadly comprises a wafer supply unit 10, a preform unit 90, a bonding unit 40, a transport unit 50, a substrate supply unit 60, a substrate unloading unit 70, and a control unit (control device) 80. The Y2-Y1 direction is the front-to-rear direction of die bonder 1, the X2-X1 direction is the left-to-right direction, and the Z1-Z2 direction is the up-to-down direction. The wafer supply unit 10 is located on the front side of die bonder 1, and the bonding unit 40 is located on the rear side.

[0012] As shown in FIG. 2, the wafer supply unit 10 has a wafer holder 12 that holds a wafer W and a push-up unit 13 that pushes up a die D from the wafer W. The wafer W is adhered (attached) to a dicing tape DT, and the wafer W is divided into a plurality of dies D. The dicing tape DT is held by a wafer ring WR. The wafer W is, for example, a glass wafer or a semiconductor wafer, and the die D is a glass chip or a semiconductor chip. The semiconductor chip is, for example, a logic chip, a memory chip, an image sensor chip, etc. The die D is also called a workpiece.

[0013] A wafer cassette (not shown) containing a plurality of wafer rings WR is loaded into a wafer cassette lifter (not shown). The wafer rings WR are removed from the wafer cassette and supplied to wafer holder 12, or removed from wafer holder 12 and stored in the wafer cassette.

[0014] Wafer holder 12 has expand ring 15 that holds wafer ring WR, and support ring 17 that horizontally positions dicing tape DT, which is held by wafer ring WR and has multiple dies D adhered to it. Push-up unit 13 is disposed inside support ring 17. Control unit 80 moves wafer holder 12 in the X1-X2 and Y1-Y2 directions using a wafer table (not shown), and moves die D to the position of push-up unit 13 (pickup position).

[0015] When the die D is pushed up, the wafer holder 12 lowers the expand ring 15 holding the wafer ring WR. As a result, the dicing tape DT held by the wafer ring WR is stretched, widening the gap between the dies D, and the push-up unit 13 pushes up the die D from below, improving the pick-up ability of the die D.

[0016] As shown in FIG. 3 , the preform unit 90 includes a syringe 91, a drive unit (not shown) that moves the syringe 91 in the X1-X2, Y1-Y2, and Z1-Z2 directions, a preform camera 94 that recognizes the application position of the syringe 91, and a preform stage 96. The preform unit 90 applies paste PA using the syringe 91 to a substrate S or a semiconductor chip HT mounted on the substrate S, which is transported by the transport unit 50. Here, the paste PA is a liquid adhesive, such as a resin paste. The syringe 91 has a nozzle 92 at its tip. The syringe 91 contains the paste PA, and is configured to extrude the paste PA from the tip of the nozzle 92 by air pressure and apply it to the substrate S or the semiconductor chip HT mounted on the substrate S. Here, the substrate S and the semiconductor chip HT mounted on the substrate S are also referred to as components of a semiconductor device. The semiconductor chip HT is, for example, a logic chip, a memory chip, or an image sensor chip. The substrate S is a wiring board, a lead frame, or the like.

[0017] As shown in FIG. 4, the bonding unit 40 includes a bond head 41, a Y-axis drive unit (not shown), a substrate recognition camera 44, and a bond stage 46. The bond head 41 includes a collet 42 that holds a die D by suction at its tip. The Y-axis drive unit moves the bond head 41 in the Y1-Y2 direction. The substrate recognition camera 44 captures an image of a position recognition mark (not shown) on the substrate S to recognize the bond position. The bonding unit 40 picks up a die D from the wafer supply unit 10 and bonds it onto the transported substrate S or onto a semiconductor chip HT mounted on the substrate S. At this time, the bond head 41 corrects the pickup position and orientation based on the image data captured by the wafer recognition camera 44 and picks up the die D from the wafer W. The bond head 41 then bonds the die D onto the substrate S or onto the semiconductor chip HT mounted on the substrate S based on the image data captured by the substrate recognition camera 44.

[0018] 1, the transport unit 50 has a transport lane 52 as a transport path along which the substrate S moves. With this configuration, the substrate S moves from the substrate supply unit 60 along the transport lane 52 to the coating position, and after coating, moves to the bonding position, and after bonding, moves to the substrate unloading unit 70 and hands over the substrate S to the substrate unloading unit 70.

[0019] The control unit 80 is configured as a computer equipped with a CPU (Central Processing Unit) and a storage device. The storage device is configured as a computer-readable recording medium.

[0020] The storage device readably stores a control program that monitors and controls the operation of each of the above-mentioned parts of the die bonder 1, a process recipe that describes the procedures and conditions of the die bonding process described below, etc. The process recipe is a combination that causes the control unit 80 to execute each procedure in the die bonding process described below and enables predetermined results to be obtained, and functions as a program.

[0021] The CPU is configured to read and execute a control program from the storage device, and also to read a process recipe, and to control the coating operation of the preform part 90, the heating operation of the nozzle 92, etc., in accordance with the contents of the read process recipe.

[0022] Next, a die bonding process (a method for mounting a workpiece, a method for manufacturing a semiconductor device) using a die bonder in an embodiment will be described with reference to Fig. 5. Fig. 5 is a flowchart showing the die bonding process using the die bonder shown in Fig. 1. Here, an example will be described in which a die D made of a glass chip is bonded to a substrate S on which a semiconductor chip HT is mounted.

[0023] (Wafer loading process: process S1) A wafer cassette containing wafer rings WR is loaded into the wafer cassette lifter. Control unit 80 removes wafer rings WR from the loaded wafer cassette and transfers them onto wafer holder 12.

[0024] (Substrate loading process: Process S2) A transport jig storing a substrate S on which a semiconductor chip HT is mounted is loaded into the substrate supply unit 60. After loading, the control unit 80 controls the transport unit 50 to transport the substrate S and load it into a preform stage 96 provided in the preform unit 90.

[0025] (Preforming process: Process S3) The control unit 80 acquires an image of the surface of the semiconductor chip HT mounted on the substrate S before the paste PA is applied using the preform camera 94, and confirms the surface to which the paste PA is to be applied. If there is no problem with the surface to be applied, the control unit 80 confirms and positions the position on the substrate S supported by the preform stage 96 where the paste PA is to be applied.

[0026] The control unit 80 applies paste PA in a frame shape (annular shape) from a nozzle 92 at the tip of a syringe 91 to a semiconductor chip HT mounted on a substrate S. The paste PA is, for example, a highly viscous (high viscosity) adhesive such as an ultraviolet (UV) curing adhesive. After application, the control unit 80 photographs the applied paste PA with a preform camera 94. The control unit 80 checks whether the paste PA has been applied accurately based on the image acquired by photographing, and inspects (visual inspection) the applied paste PA. If there are no problems with the application, the control unit 80 causes the transport unit 50 to transport the substrate S to a bond stage 46 provided in the bonding unit 40.

[0027] (Bond process: Process S4) (Die positioning) After step S1, the control unit 80 performs a wafer table pitch operation to move the wafer holder 12 so that the desired die D can be picked up from the wafer W. The control unit 80 photographs the die D with the wafer recognition camera 24, and performs positioning and surface inspection of the die D based on the image data acquired by the photograph. The control unit 80 performs image processing on the image data to calculate the amount of deviation (in the X, Y, and θ directions) of the die D on the wafer holder 12 from the die position reference point of the die bonder 1, and performs positioning. Note that the die position reference point is previously stored as an initial setting for the device, which is a predetermined position of the wafer holder 12. The control unit 80 performs image processing on the image data to perform surface inspection of the die D.

[0028] (Board positioning) After step S3, the control unit 80 photographs the substrate S placed on the bond stage 46 using the substrate recognition camera 44 and acquires image data. The control unit 80 processes the image data to calculate the amount of deviation (in the X, Y, and θ directions) of the substrate S from the substrate position reference point of the die bonder 1. Note that the control unit 80 previously stores a predetermined position of the bonding unit 40 as the initial setting of the device as the substrate position reference point.

[0029] (Pickup & Bond) The control unit 80 horizontally moves and lowers the bond head 41 to directly above the die D to be picked up, corrects the suction position of the bond head 41 based on the calculated amount of deviation of the die D, and vacuum-sucks the die D with the collet 42. The control unit 80 causes the bond head 41, which has picked up the die D from the wafer W, to bond the die D to a predetermined location on the semiconductor chip HT mounted on the substrate S on the bond stage 46. The control unit 80 photographs the die D bonded to the semiconductor chip HT with the substrate recognition camera 44, and performs an inspection based on the image data acquired by photographing to determine whether the die D has been bonded in the desired position, etc.

[0030] (Substrate unloading process: Process S5) The control unit 80 causes the transport unit 50 to transport the substrate S, to which the die D is bonded, from the bonding unit 40 to the substrate unloading unit 70. The control unit 80 removes the substrate S from the substrate unloading unit 70, stores it in a transport jig, and unloads the substrate S.

[0031] The details of the preform section 90 will be described with reference to Fig. 6. Fig. 6 is a side view showing the coating device and the preform stage.

[0032] The preform unit 90 includes a syringe 91, a nozzle 92, a nozzle holder 92a, a holding member 93, a support member 95, and a preform stage 96. The syringe 91 contains the paste PA. The syringe 91 has a nozzle holder 92a at its tip. The nozzle holder 92a holds the nozzle 92 therein. The holding member 93 holds the nozzle holder 92a. The holding member 93 also functions as a heater block and has an embedded heating unit 93a. The heating unit 93a is composed of, for example, a resistance heating electric heater. The support member 95 supports the holding member 93 and has the function of adjusting its inclination. The support member 95 can be moved vertically and horizontally by a drive unit (not shown), thereby moving the syringe 91.

[0033] The holding member 93 has a temperature sensor (not shown) near the nozzle holder 92a, and the control unit 80 controls the heating unit 93a based on the temperature of the temperature sensor. Heat from the heating unit 93a is transferred to the entire nozzle 92 via the nozzle holder 92a by thermal conduction, and the paste PA inside the nozzle 92 is heated and maintained at an appropriate temperature.

[0034] The syringe 91, the nozzle 92, the nozzle holder 92a, the holding member 93, and the support member 95 constitute a coating device. A preform stage 96 may also be included in the coating device.

[0035] When applying the paste PA to the semiconductor chip HT, the paste PA is placed in a syringe 91, and a predetermined amount of paste PA is discharged by supplying pressurized gas such as air from an air pulse dispenser (not shown) from above the syringe 91 for a predetermined period of time. For example, the discharge pressure of the paste PA is a predetermined pressure, and the movement speed of the nozzle 92 is a predetermined speed. During application, the syringe 91 is scanned two-dimensionally in one stroke (drawing operation) within the XY plane with the nozzle 92 in close proximity to the semiconductor chip HT.

[0036] The application of the paste PA will be described with reference to Figures 7 and 8. Figure 7 is a top view showing an example of the configuration of a substrate in an embodiment. Figure 8 is a top view showing an example of the application of the paste.

[0037] As shown in Figure 7, a plurality of product areas (hereinafter referred to as attachment areas P) that will eventually become one package are formed in a grid pattern on the substrate S. A semiconductor chip HT is mounted (attached) to each attachment area P. In the following, an example will be described in which the attachment areas P are arranged in eight rows, four in a row. The attachment areas P are also called tabs.

[0038] The control unit 80 applies paste PA to the semiconductor chips HT using the syringe 91, starting from the attachment area P in the first row and first column (CN=1, RN=1) at the top right of the substrate S, on which the attachment areas P are arranged in a grid pattern, in a downward sequence. After applying paste PA to the semiconductor chips HT in the attachment area P in the fourth row and first column (CN=1, RN=4) at the bottom right, the control unit 80 moves the substrate S and performs surface inspection and positioning on the second column from the right. The control unit 80 then applies paste PA from the top position (first row) of the second column from the right (CN=2, RN=1) in a downward sequence. The control unit 80 then applies paste PA to the third column, fourth column, ..., eighth column in a similar manner. Through this continuous application process, the control unit 80 applies paste PA to all of the attachment areas P on the substrate S.

[0039] The process of dispensing the paste PA will now be described. The paste PA is contained in a syringe 91. First, the support member 95 moves, causing the nozzle 92 to move above the writing position WS shown in FIG. 8. As the support member 95 lowers, the tip of the nozzle 92 descends from a relatively high position and reaches a predetermined height (nozzle height) above the upper surface of the substrate S at the timing when dispensing begins. The nozzle height is, for example, 100 to 200 μm. Here, when the dispenser supplies compressed air, the air pressure inside the syringe 91 rapidly increases, and dispensing gradually begins. Synchronously with this, the drawing operation begins. Specifically, as the support member 95 moves, the nozzle 92 moves horizontally in two dimensions. The nozzle 92 generally returns to the writing position WS, where the drawing operation ends. Synchronously with this, when the dispenser stops supplying compressed air, the air pressure inside the syringe 91 rapidly decreases, but dispensing gradually weakens and stops. Almost simultaneously with the stop of dispensing, the support member 95 raises the nozzle 92. By this operation, for example, as shown in FIG. 8, the paste PA is applied in a ring shape on the semiconductor chip HT.

[0040] The object to be coated is, for example, a wire-bonded semiconductor chip HT as shown in FIGS. 6 and 8. As shown in FIG. 8, assume that paste PA is coated on a peripheral region including a wire-bonded portion on the semiconductor chip HT. If the paste PA has a high viscosity, the height and width of the coated paste PA may differ between a region (portion, location) HS where bonding wires BW are present and a region (portion, location) LS where bonding wires BW are not present. Here, region HS is a region where bonding wires BW are arranged at intervals narrower than a predetermined interval and is a region where the coated surface is high. Region LS is a region where bonding wires BW are arranged at intervals wider than a predetermined interval and is a region where the coated surface is low.

[0041] The paste PA that is applied from the region LS to the region HS while being discharged becomes taller and wider in some parts due to surface tension generated between the paste PA and the bonding wire BW. The height of the paste PA applied to the region LS is lower than the height of the paste PA applied to the region HS, and the width of the paste PA applied to the region LS is narrower than the width of the paste PA applied to the region HS.

[0042] In this embodiment, the temperature of the nozzle 92 is adjusted by a heating unit 93a provided near the nozzle 92, thereby adjusting the temperature of the paste PA inside the nozzle 92. This adjusts the viscosity of the paste PA inside the nozzle 92.

[0043] An example of temperature adjustment will be described with reference to Fig. 9. Fig. 9 is a diagram showing the temperature transition of the paste inside the nozzle. The horizontal axis of the graph shown in Fig. 9 is time (t) and the vertical axis is temperature (T).

[0044] Before application of the paste PA begins, the temperature of the paste PA inside the nozzle 92 is assumed to be room temperature (TR). First, the control unit 80 begins heating the nozzle 92 a predetermined period (P0) before application of the paste PA begins (P1). When the nozzle 92 is heated to the predetermined temperature, the paste PA inside the nozzle 92 is heated to a predetermined temperature (TH). Here, the predetermined temperature (TH) is a temperature that makes the viscosity of the paste PA inside the nozzle 92 a predetermined viscosity, a temperature that does not harden the paste PA, and is, for example, 40 to 50°C. Furthermore, "before production begins" refers to before the application operation begins, and it is preferable not to heat the nozzle 92 before the period required for the temperature of the nozzle 92 to reach the predetermined temperature from the start of heating before the application operation begins.

[0045] During production (P1-P2), the control unit 80 continues to heat the nozzle 92, maintaining the temperature of the paste PA in the nozzle 92 at a predetermined temperature (TH), and maintaining the viscosity of the paste PA in the nozzle 92 at a predetermined viscosity. Here, "during production" refers to a state in which continuous coating operations are performed. In continuous coating operations, the paste PA is repeatedly discharged and stopped. If the period from the stop of dispensing to the start of dispensing exceeds a predetermined time, this does not constitute a continuous coating operation. The coating operation on multiple attachment areas P of a single substrate S as shown in FIG. 7 is a continuous coating operation unless it is interrupted due to a problem or the like. Substrates S are continuously transported from the substrate supply unit 60 to the preform unit 90, and the coating operation on these substrates S is a continuous coating job unless it is interrupted due to a problem or the like.

[0046] After the end of production (P2), the control unit 80 stops heating the nozzle 92. Here, the end of production means that the continuous coating operation is stopped and the coating device enters a standby state. For example, when the transport jig that stores the substrates introduced into the substrate supply unit 60 becomes empty and needs to be replaced, the coating operation is interrupted and the coating device enters a standby state. The coating device also enters a standby state when replacing the wafer ring WR held on the wafer holder 12 or when replacing the syringe 91. Note that, as shown in FIG. 9, when the standby period (P2 to P3) is short, the temperature of the paste PA in the nozzle 92 does not drop to room temperature. On the other hand, when the standby period (P2 to P3) is long, the temperature of the paste PA in the nozzle 92 drops to room temperature.

[0047] By using the temperature control function of the nozzle 92 to temporarily lower the viscosity of the paste PA in the nozzle 92, the fluidity is increased and the influence of the bonding wire BW is reduced. This makes it possible to improve the uniformity of the applied paste. Also, the viscosity of the paste PA is reduced by temporarily heating only the tip of the nozzle 92, rather than the entire syringe 91. In other words, since the temperature of the entire syringe 91 is not controlled (heated) or the temperature of the nozzle 92 is not controlled (heated) all the time, deterioration of the paste PA can be reduced.

[0048] The nozzle 92 is heated before application begins, reducing the effects of thixotropy. If application is not performed for a predetermined period of time, the amount of paste applied at the start of application becomes unstable due to the effects of thixotropy. Thixotropy is the property in which viscosity gradually decreases and becomes liquid when a certain force is applied. Furthermore, if the paste remains stationary, the viscosity increases and becomes solid. As a result, as shown in Figure 8, the amount of paste at the writing start position WS may be insufficient, resulting in areas on the semiconductor chip HT that are not applied. The effects of thixotropy can be reduced not only for application targets with surfaces of different heights, but also for application targets where the distance between the application surface and the nozzle is approximately constant. This improves the uniformity of the applied paste.

[0049] The disclosure made by the present inventor has been specifically described above based on the embodiments, but it goes without saying that the present disclosure is not limited to the above embodiments and can be modified in various ways.

[0050] For example, in addition to the temperature of the nozzle 92, at least one of the horizontal movement speed of the nozzle 92 and the paste discharge pressure may be controlled to control the amount of paste applied.

[0051] The temperature of the nozzle 92 may be controlled by measuring and detecting the distance from the tip of the nozzle 92 to the surface to be coated. Information about the distance from the tip of the nozzle 92 to the surface to be coated may be input in advance to control the temperature of the nozzle 92. The paste temperature may be controlled for each tab, each row of tabs, or each substrate.

[0052] In the embodiment, an electric heater for resistance heating has been described as an example of the heating section, but an electric heater for infrared heating or induction heating, or a Peltier element may also be used.

[0053] In the embodiment, an example has been described in which the paste PA is applied in a ring shape on the semiconductor chip HT, but the paste PA may be applied in a shape other than a ring shape (for example, an X-shape or a Z-shape) on the semiconductor chip HT.

[0054] In the embodiment, an example has been described in which a glass chip is bonded onto the semiconductor chip HT, but a semiconductor chip (die) separated from a semiconductor wafer may be stacked on the semiconductor chip HT.

[0055] Furthermore, in the embodiment, an example in which the paste PA is applied onto the semiconductor chip HT has been described, but the paste PA may be applied onto the substrate S. In this case, the semiconductor chip is bonded onto the substrate S.

[0056] In the embodiment, an example has been described in which the die D picked up by the bond head 41 from the wafer supply unit 10 is bonded to the semiconductor chip HT mounted on the substrate S. An intermediate stage may be provided between the wafer supply unit 10 and the bonding unit 40, the die D picked up from the wafer supply unit 10 by the pickup head may be placed on the intermediate stage, and the die D may be picked up again from the intermediate stage by the bond head 41 and bonded to the semiconductor chip HT mounted on the substrate S. [Explanation of symbols]

[0057] 1. Die bonder (semiconductor manufacturing equipment) 80 Control unit 91 Syringe 92 Nozzle 93a... Heating part

Claims

1. a coating device including a syringe storing a paste, a nozzle holder provided at the tip of the syringe, a nozzle provided in the nozzle holder, and a heating unit for heating the nozzle holder, the coating device coating the paste onto a coating object; a control unit configured to adjust the temperature of the nozzle holder by the heating unit and to apply the paste from the nozzle onto the application target; A semiconductor manufacturing device comprising:

2. 2. The semiconductor manufacturing apparatus of claim 1, The control unit maintains temperature control of the nozzle holder during a period in which continuous coating operations are performed in which the discharge and cessation of discharge of the paste from the nozzle are repeated, and stops heating the nozzle holder during a standby period in which the continuous coating operations are not performed.

3. 3. The semiconductor manufacturing apparatus according to claim 2, The control unit is configured to heat the nozzle holder using the heating unit before starting coating of the coating object.

4. 3. The semiconductor manufacturing apparatus according to claim 2, In the semiconductor manufacturing device, the waiting period is a period during which the transport jig storing the substrates runs out of substrates and is replaced with a transport jig storing substrates.

5. 2. The semiconductor manufacturing apparatus of claim 1, The object to be coated is a semiconductor chip mounted on a substrate and connected to the substrate by a bonding wire.

6. 6. The semiconductor manufacturing apparatus according to claim 5, The control unit is configured to cause the coating device to apply the coating material in a ring shape around the periphery of the coating object.

7. 7. The semiconductor manufacturing apparatus according to claim 6, Furthermore, it is equipped with a bond head, The control unit is configured to place a workpiece on the paste applied onto the semiconductor chip by the bond head.

8. 8. The semiconductor manufacturing apparatus according to claim 7, the workpiece is a glass chip, The paste contains an ultraviolet curing adhesive.

9. a syringe in which the paste is stored; a nozzle holder provided at the tip of the syringe; a nozzle provided in the nozzle holder; a heating unit that heats the nozzle; a control unit configured to adjust the temperature of the nozzle by the heating unit and apply the paste from the nozzle onto an application target; A coating device comprising:

10. The coating device of claim 9, The control unit is configured to maintain temperature control of the nozzle holder during a period in which continuous coating operations are performed in which the discharge and cessation of discharge of the paste from the nozzle are repeated, and to stop heating the nozzle holder during a standby period in which the continuous coating operations are not performed.

11. The coating device of claim 10, The control unit is configured to heat the nozzle holder using the heating unit before starting application of the coating material to the coating object.

12. The coating device of claim 9, The object to be coated is a semiconductor chip mounted on a substrate and connected to the substrate by a bonding wire.

13. applying the paste to the object to be coated by the coating device of claim 12; placing a die on the semiconductor chip; A method for manufacturing a semiconductor device comprising:

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