High-frequency module and communication device

Abstract

To provide a high-frequency module that can suppress thermal degradation and / or damage to a transmitting filter.SOLUTION: A high-frequency module 1 includes a module substrate 90, a transmitting filter 30 disposed on the module substrate 90, an integrated circuit 81 disposed on the module substrate 90 and including a temperature sensor 40, resin members 91 and 92 covering at least a portion of the transmitting filter 30 and the integrated circuit 81, and a metal shield 93 covering at least a portion of the surface of the resin members 91 and 92. Each of the transmitting filter 30 and the integrated circuit 81 is in contact with the metal shield 93.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present invention relates to a high-frequency module and a communication device. [Background technology]

[0002] Patent Document 1 discloses that in a high-frequency module having a PA control circuit stacked on a power amplifier, the PA control circuit includes a temperature sensor for measuring the temperature of the power amplifier. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2022-07366 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in conventional high-frequency modules, it is not possible to measure the temperature of the transmit filter, and it may be difficult to prevent deterioration and / or damage to the transmit filter due to heat.

[0005] Therefore, the present invention provides a high-frequency module and a communication device that can suppress deterioration and / or damage of a transmission filter due to heat. [Means for solving the problem]

[0006] A radio-frequency module according to one aspect of the present invention includes a module substrate, a transmit filter disposed on the module substrate, an integrated circuit disposed on the module substrate and including a temperature sensor, a resin member covering at least a portion of the transmit filter and the integrated circuit, and a metal shield covering at least a portion of the surface of the resin member, wherein each of the transmit filter and the integrated circuit is in contact with the metal shield.

[0007] A communication device according to one aspect of the present invention includes a signal processing circuit that processes a high-frequency signal, and the above-described high-frequency module that is configured to transmit the high-frequency signal between the signal processing circuit and an antenna. [Effects of the Invention]

[0008] According to the present invention, deterioration and / or damage to the transmit filter due to heat can be suppressed. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a circuit configuration diagram of a communication device according to the first embodiment. [Figure 2] FIG. 2 is a plan view of the high-frequency module according to the first embodiment. [Figure 3] FIG. 3 is a plan view of the high-frequency module according to the first embodiment. [Figure 4] FIG. 4 is a cross-sectional view of the high-frequency module according to the first embodiment. [Figure 5] FIG. 5 is a plan view of the high-frequency module according to the second embodiment. [Figure 6] FIG. 6 is a cross-sectional view of the high-frequency module according to the second embodiment. [Figure 7] FIG. 7 is a plan view of the high-frequency module according to the third embodiment. [Figure 8] FIG. 8 is a plan view of the high-frequency module according to the third embodiment. [Figure 9] FIG. 9 is a cross-sectional view of the high-frequency module according to the third embodiment. [Figure 10] FIG. 10 is a plan view of the high-frequency module according to the fourth embodiment. [Figure 11] FIG. 11 is a plan view of the high-frequency module according to the fourth embodiment. [Figure 12] FIG. 12 is a cross-sectional view of the high-frequency module according to the fourth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that the embodiments described below are all comprehensive or specific examples. The numerical values, shapes, materials, components, arrangements and connection forms of the components shown in the following embodiments are merely examples and are not intended to limit the present invention.

[0011] It should be noted that the drawings are schematic diagrams in which emphasis, omission, or adjustment of proportions has been appropriately made to illustrate the present invention, and are not necessarily strictly illustrated, and may differ from the actual shapes, positional relationships, and proportions. In the drawings, the same reference numerals are used to denote substantially the same components, and redundant explanations may be omitted or simplified.

[0012] In the following figures, the x-axis and y-axis are axes that are perpendicular to each other on a plane parallel to the main surface of the module substrate. The z-axis is an axis perpendicular to the main surface of the substrate, with its positive direction indicating the upward direction and its negative direction indicating the downward direction.

[0013] In the following description, "connected" includes not only direct connection by connection terminals and / or wiring conductors, but also electrical connection via other circuit elements. "Directly connected" means direct connection by connection terminals and / or wiring conductors without via other circuit elements. "C is connected between A and B" means that one end of C is connected to A and the other end of C is connected to B, meaning that C is arranged in series in the path connecting A and B. "Path connecting A and B" means a path made up of conductors electrically connecting A to B.

[0014] "Terminal" means a point where a conductor within an element terminates. Note that terminal is understood to mean any point on the conductor between elements or the entire conductor, not just a single point, provided the impedance of the conductor between elements is sufficiently low.

[0015] The "passband of a filter" is defined as the portion of the frequency spectrum transmitted by the filter over which the output power is not attenuated by more than 3 dB below the maximum output power. Thus, the passband of a bandpass filter is defined as the frequency range between the two points where the output power is attenuated by 3 dB below the maximum output power.

[0016] The term "transmission band" refers to a frequency band used for transmission in a communication device, and the term "reception band" refers to a frequency band used for reception in a communication device. For example, in a frequency division duplex (FDD) band, different frequency bands (e.g., an uplink band and a downlink band) are used as the transmission band and the reception band. For example, in a time division duplex (TDD) band, the same frequency band is used as the transmission band and the reception band.

[0017] "Planar view of the module board" means viewing an object by orthogonally projecting it onto the xy plane in the negative direction of the z axis. "A overlaps with B in planar view" means that the area of ​​A projected orthogonally onto the xy plane overlaps with the area of ​​B projected orthogonally onto the xy plane.

[0018] "A component is disposed on a module substrate" includes a component being disposed on the main surface of the module substrate and a component being disposed within the module substrate. "A component is disposed on the main surface of the module substrate" includes a component being disposed in contact with the main surface of the module substrate, as well as a component being disposed above the main surface of the module substrate without contacting the main surface (for example, a component being stacked on top of another component that is disposed in contact with the main surface). "A component is disposed on the main surface of the module substrate" may also include a component being disposed in a recess formed in the main surface of the module substrate.

[0019] "A is located between B and C" means that at least one of multiple line segments connecting any point in B and any point in C passes through A. "A is closer to C than B" means that the distance between A and C is shorter than the distance between B and C. Here, "the distance between A (B) and C" means the length of the shortest line segment among multiple line segments connecting any point in A (B) and any point in C.

[0020] Furthermore, terms indicating the relationship between elements, such as "parallel" and "perpendicular," terms indicating the shape of elements, such as "straight line," and numerical ranges do not only represent the strict meaning, but also include a substantially equivalent range, for example, an error of a few percent.

[0021] (Embodiment 1) A first embodiment will be described. A communication device 5 according to this embodiment can be used to provide wireless connectivity. For example, the communication device 5 can be implemented in UEs in a cellular network (also referred to as a mobile network), such as mobile phones, smartphones, tablet computers, and wearable devices. In another example, the communication device 5 can be implemented to provide wireless connectivity to Internet of Things (IoT) sensor devices, medical / healthcare devices, cars, unmanned aerial vehicles (UAVs) (so-called drones), and automated guided vehicles (AGVs). In yet another example, the communication device 5 can be implemented to provide wireless connectivity at a wireless access point or a wireless hotspot.

[0022] The circuit configuration of a communication device 5 and a high-frequency module 1 according to this embodiment will be described with reference to Fig. 1. Fig. 1 is a circuit configuration diagram of a communication device 5 according to this embodiment.

[0023] 1 is an exemplary circuit configuration, and communication device 5 may be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the description of communication device 5 provided below should not be construed as limiting.

[0024] [1.1 Circuit configuration of communication device 5] First, the circuit configuration of a communication device 5 according to this embodiment will be described with reference to Fig. 1. The communication device 5 includes a high-frequency module 1, an antenna 2, an RFIC (Radio Frequency Integrated Circuit) 3, and a BBIC (Baseband Integrated Circuit) 4.

[0025] The high-frequency module 1 can transmit high-frequency signals between the antenna 2 and the RFIC 3. The circuit configuration of the high-frequency module 1 will be described later.

[0026] The antenna 2 is connected to the antenna connection terminal 100 of the high-frequency module 1. The antenna 2 can receive a high-frequency signal from the high-frequency module 1 and transmit it to the outside of the communication device 5. The antenna 2 may also receive a high-frequency signal from the outside of the communication device 5 and output it to the high-frequency module 1. The antenna 2 does not have to be included in the communication device 5. The communication device 5 may also include one or more antennas in addition to the antenna 2.

[0027] The RFIC 3 is an example of a signal processing circuit that processes radio-frequency signals. Specifically, the RFIC 3 can perform signal processing on a transmission signal input from the BBIC 4 by up-conversion or the like, and output the radio-frequency transmission signal generated by the signal processing to the radio-frequency module 1. Furthermore, the RFIC 3 can perform signal processing on a radio-frequency reception signal input via a reception path (not shown) of the radio-frequency module 1 by down-conversion or the like, and output the reception signal generated by the signal processing to the BBIC 4. The RFIC 3 can also have a control unit that controls the switches, power amplifiers, and the like included in the radio-frequency module 1. Note that some or all of the functions of the RFIC 3 as a control unit may be included outside the RFIC 3, for example, in the BBIC 4 or the radio-frequency module 1.

[0028] The BBIC 4 is a baseband signal processing circuit that processes signals using a frequency band lower than the frequency band of the high-frequency signals transmitted by the high-frequency module 1. The signals processed by the BBIC 4 include, for example, image signals for image display and / or audio signals for calls via a speaker. The BBIC 4 does not necessarily have to be included in the communication device 5.

[0029] [1.2. Circuit configuration of high-frequency module 1] Next, the circuit configuration of a radio frequency module 1 according to this embodiment will be described with reference to Fig. 1. The radio frequency module 1 includes a power amplifier 10, a PA control circuit 20, a transmit filter 30, a temperature sensor 40, a switch circuit 50, an antenna connection terminal 100, and a radio frequency input terminal 110.

[0030] The antenna connection terminal 100 is an external connection terminal of the high frequency module 1, and is connected to the antenna 2 outside the high frequency module 1, and is connected to the switch circuit 50 inside the high frequency module 1.

[0031] The radio frequency input terminal 110 is an external connection terminal of the radio frequency module 1, and is connected to the RFIC 3 outside the radio frequency module 1, and is connected to the power amplifier 10 inside the radio frequency module 1.

[0032] Power amplifier 10 uses power supplied from a power supply (not shown) to amplify a band A transmission signal received via radio frequency input terminal 110. An input terminal of power amplifier 10 is connected to radio frequency input terminal 110, and an output terminal of power amplifier 10 is connected to transmission filter 30.

[0033] Note that a part or all of the power amplifier 10 does not have to be included in the high-frequency module 1. In this case, a part or all of the power amplifier 10 may be connected between the RFIC 3 and the high-frequency input terminal 110, or may be included in the RFIC 3.

[0034] The PA control circuit 20 can control the power amplifier 10. Specifically, the PA control circuit 20 outputs a control signal for controlling the power amplifier 10 to the power amplifier 10 based on, for example, a control signal from the RFIC 3 and / or a sensor signal from the temperature sensor 40. This controls, for example, a bias current supplied to the power amplifier 10.

[0035] The transmit filter 30 is a bandpass filter having a passband that includes a predetermined transmit band. The transmit filter 30 includes a terminal 31 connected to the power amplifier 10 and a terminal 32 connected to the switch circuit 50. Note that the transmit filter 30 is not limited to a bandpass filter.

[0036] The predetermined band is a frequency band for a communication system built using a radio access technology (RAT). The predetermined band is defined in advance by a standardization organization (e.g., 3GPP (registered trademark) (3rd Generation Partnership Project) and IEEE (Institute of Electrical and Electronics Engineers)). Examples of the communication system include a 5GNR (5th Generation New Radio) system, an LTE (Long Term Evolution) system, and a WLAN (Wireless Local Area Network) system.

[0037] The temperature sensor 40 can detect temperature and output a sensor signal to the PA control circuit 20. The temperature sensor 40 may output the sensor signal to the RFIC 3 instead of or in addition to the PA control circuit 20. The temperature sensor 40 is formed of, for example, a semiconductor diode.

[0038] The switch circuit 50 is connected between the antenna connection terminal 100 and a plurality of filters including the transmit filter 30 (filters other than the transmit filter 30 are not shown). The switch circuit 50 includes a common terminal 501 and a plurality of selection terminals (including a selection terminal 502). The common terminal 501 is connected to the antenna connection terminal 100. The selection terminal 502 is connected to the transmit filter 30. Each of the other selection terminals is connected to a transmit filter (not shown) and / or a receive filter (not shown).

[0039] In such a connection configuration, the switch circuit 50 can connect the common terminal 501 to a plurality of selection terminals, for example, based on a control signal from the RFIC 3. The switch circuit 50 is configured as, for example, a multi-connection type switch circuit.

[0040] The circuit configuration of the high-frequency module 1 is an example and is not limited to the circuit configuration shown in Fig. 1. For example, the high-frequency module 1 may further include a switch circuit connected between the multiple filters and the power amplifier 10, and capable of switching the connection of the power amplifier 10 between the multiple filters.

[0041] [1.3. Example of high frequency module 1 implementation] Next, an example of mounting the high-frequency module 1 having the circuit configuration described above will be described with reference to FIGS. 2 to 4. FIG. 2 is a plan view of the high-frequency module 1 according to this embodiment, viewed from the positive side of the z-axis toward the main surface 90a of the module substrate 90. FIG. 3 is a plan view of the high-frequency module 1 according to this embodiment, viewed from the positive side of the z-axis toward the main surface 90b of the module substrate 90. FIG. 4 is a cross-sectional view of the high-frequency module 1 according to this embodiment. The cross-section of the high-frequency module 1 in FIG. 4 is taken along line iv-iv in FIGS. 2 and 3.

[0042] 2 to 4, some components are labeled with letters to facilitate understanding of the relative positions of the components, but the actual components may not be labeled with the letters. Also, in Figures 2 and 3, resin members 91 and 92 that cover the components on main surfaces 90a and 90b of module substrate 90 and metal shield 93 that covers the surfaces of resin members 91 and 92 are not shown.

[0043] 2 to 4 show an exemplary configuration of the high-frequency module 1, and the high-frequency module 1 can be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 provided below should not be construed as limiting.

[0044] The high-frequency module 1 includes integrated circuits 81 and 82, a module substrate 90, resin members 91 and 92, a metal shield 93, and a plurality of external connection terminals 150 in addition to the multiple circuit components shown in FIG.

[0045] The module substrate 90 has principal surfaces 90a and 90b facing each other. The principal surface 90a is an example of a first principal surface and may also be called an upper surface or a front surface. The principal surface 90b is an example of a second principal surface and may also be called a lower surface or a back surface. Wiring (not shown) and via conductors (not shown) are formed within the module substrate 90 and on the principal surfaces 90a and 90b. In this embodiment, the module substrate 90 has a rectangular shape in a plan view, but the shape of the module substrate 90 is not limited to a rectangle.

[0046] The module substrate 90 may be, for example, a low temperature co-fired ceramics (LTCC) substrate or a high temperature co-fired ceramics (HTCC) substrate having a laminated structure of multiple dielectric layers, a component-embedded substrate, a substrate having a redistribution layer (RDL), or a printed circuit board, but is not limited to these.

[0047] The resin members 91 and 92 cover at least a portion of the main surfaces 90a and 90b of the module substrate 90 and the components on the main surfaces 90a and 90b. The resin members 91 and 92 may be made of, for example, epoxy resin, but are not limited to, a material. The resin members 91 and 92 function to ensure the reliability of the components on the main surfaces 90a and 90b, such as mechanical strength and moisture resistance.

[0048] The metal shield 93 is a thin metal film formed by, for example, a sputtering method. The metal shield 93 is formed so as to cover part of the surfaces (top and side surfaces) of the resin members 91 and 92. The metal shield 93 is connected to ground and prevents external noise from entering the electronic components that make up the high-frequency module 1 and prevents noise generated in the high-frequency module 1 from interfering with other modules or other devices.

[0049] Here, the components arranged on the main surface 90a of the module substrate 90 will be described with reference to FIGS.

[0050] The power amplifier 10 (PA) is disposed on a main surface 90a of the module substrate 90. The power amplifier 10 is not in contact with the metal shield 93. In other words, the power amplifier 10 is not directly and physically connected to the metal shield 93.

[0051] The power amplifier 10 is implemented as a semiconductor integrated circuit. Examples of semiconductor materials that can be used include silicon germanium (SiGe) and gallium arsenide (GaAs). In this case, a part or all of the power amplifier 10 may be configured with a heterojunction bipolar transistor (HBT). Gallium nitride (GaN) or silicon carbide (SiC) may also be used as the semiconductor material. In this case, a part or all of the power amplifier 10 may be configured with a high electron mobility transistor (HEMT) or a metal-semiconductor field effect transistor (MESFET). Silicon (Si) may also be used as the semiconductor material. In this case, a part or all of the power amplifier 10 may be configured with a complementary metal oxide semiconductor (CMOS) or may be manufactured using a silicon-on-insulator (SOI) process.

[0052] The transmit filter 30 (TxF) is disposed on the main surface 90a of the module substrate 90 and is in contact with the metal shield 93. In other words, the transmit filter 30 is directly and physically connected to the metal shield 93. More specifically, at least a part of the top surface of the transmit filter 30 is exposed from the resin member 91 and is in contact with the metal shield 93. Of the two opposing main surfaces of the transmit filter 30, the top surface of the transmit filter 30 is the main surface opposite to the main surface that faces the main surface 90a of the module substrate 90.

[0053] The transmit filter 30 may be a surface acoustic wave (SAW) filter, a bulk acoustic wave (BAW) filter, an LC resonant filter, a dielectric resonant filter, or any combination thereof, but is not limited to these.

[0054] Next, the components arranged on the main surface 90b of the module substrate 90 will be described with reference to FIGS.

[0055] The integrated circuit 81 is a semiconductor integrated circuit including a switch circuit 50 (SW) and a temperature sensor 40 (TS), and is disposed on the main surface 90b of the module substrate 90. The integrated circuit 81 is in contact with the metal shield 93. That is, the integrated circuit 81 is directly and physically connected to the metal shield 93. Specifically, at least a portion of the side surface of the integrated circuit 81 is in contact with a portion of the metal shield 93 formed on the side surface of the high-frequency module 1. Within the integrated circuit 81, the temperature sensor 40 is closer to the metal shield 93 than the switch circuit 50. Specifically, the temperature sensor 40 is closer to the portion of the integrated circuit 81 that is in contact with the metal shield 93 than the switch circuit 50.

[0056] The integrated circuit 81 does not need to include the switch circuit 50, and may be, for example, an integrated circuit dedicated to the temperature sensor 40. In this case, the switch circuit 50 may be included in an integrated circuit (for example, the integrated circuit 82 or a new integrated circuit) separate from the integrated circuit 81. Furthermore, instead of or in addition to the switch circuit 50, the integrated circuit 81 may include a switch circuit (not shown) connected between the power amplifier 10 and a plurality of filters.

[0057] The integrated circuit 82 is a semiconductor integrated circuit including a PA control circuit 20 (PAC), and is disposed on the main surface 90b of the module substrate 90. The integrated circuit 82 is in contact with the metal shield 93. Note that the integrated circuit 82 does not necessarily have to be in contact with the metal shield 93.

[0058] The integrated circuits 81 and 82 may be configured with, for example, CMOS. In this case, the integrated circuits 81 and 82 may be manufactured by an SOI process. However, the integrated circuits 81 and 82 are not limited to CMOS.

[0059] The integrated circuit 82 may be integrated into the integrated circuit 81. That is, the integrated circuit 81 may include the PA control circuit 20 in addition to the switch circuit 50 and the temperature sensor 40.

[0060] [1.4. Summary] As described above, the high-frequency module 1 according to this embodiment includes the module substrate 90, the transmit filter 30 arranged on the module substrate 90, the integrated circuit 81 arranged on the module substrate 90 and including the temperature sensor 40, the resin members 91 and 92 covering at least a portion of the surfaces of the transmit filter 30 and the integrated circuit 81, and the metal shield 93 covering at least a portion of the surfaces of the resin members 91 and 92, and the transmit filter 30 and the integrated circuit 81 are each in contact with the metal shield 93.

[0061] According to this, by bringing both the transmit filter 30 and the integrated circuit 81 into contact with the metal shield 93, the integrated circuit 81 is thermally connected to the transmit filter 30 via the metal shield 93. Because the thermal conductivity of the metal shield 93 is higher than that of the resin members 91 and 92, it is possible to improve the measurement accuracy and / or time response of the temperature of the transmit filter 30. If the power amplifier 10 is controlled based on the temperature of the transmit filter 30 measured in this manner, it is possible to suppress deterioration and / or damage of the transmit filter 30 due to heat.

[0062] For example, the high-frequency module 1 according to this embodiment may further include a power amplifier 10 that is disposed on the module substrate 90 and connected to the transmit filter 30, and the power amplifier 10 does not need to be in contact with the metal shield 93.

[0063] In this way, the power amplifier 10 does not come into contact with the metal shield 93, so that heat transfer from the power amplifier 10 to the temperature sensor 40 via the metal shield 93 can be suppressed, and the accuracy of measuring the temperature of the transmit filter 30 can be further improved.

[0064] Furthermore, for example, in the high-frequency module 1 according to this embodiment, the module substrate 90 may have principal surfaces 90a and 90b facing each other, the transmit filter 30 and the power amplifier 10 may be arranged on the principal surface 90a, and the integrated circuit 81 may be arranged on the principal surface 90b.

[0065] This allows the power amplifier 10, the transmission filter 30, and the integrated circuit 81 to be distributed over the two main surfaces 90a and 90b of the module substrate 90, which contributes to making the high-frequency module 1 smaller.

[0066] Furthermore, for example, the high-frequency module 1 according to the present embodiment may further include a switch circuit 50 that is connected between the transmit filter 30 and the antenna connection terminal 100 and is included in the integrated circuit 81.

[0067] In this way, the temperature sensor 40 and the switch circuit 50 are included in one integrated circuit 81, so the number of components can be reduced compared to when the temperature sensor 40 and the switch circuit 50 are mounted on two separate components.

[0068] Furthermore, for example, in the high-frequency module 1 according to the present embodiment, the temperature sensor 40 may be closer to the metal shield 93 than the switch circuit 50 within the integrated circuit 81.

[0069] This allows the temperature sensor 40 to be disposed closer to the metal shield 93. Therefore, the heat transfer path from the transmit filter 30 to the temperature sensor 40 via the metal shield 93 can be shortened, and the measurement accuracy and / or time response of the temperature of the transmit filter 30 can be further improved.

[0070] The communication device 5 according to this embodiment also includes an RFIC 3 that processes high-frequency signals, and a high-frequency module 1 that is configured to transmit high-frequency signals between the RFIC 3 and the antenna 2.

[0071] This allows the effects of the high-frequency module 1 to be realized in the communication device 5.

[0072] (Embodiment 2) Next, a second embodiment will be described. This embodiment differs from the first embodiment in that the temperature sensor is included in the same integrated circuit as the PA control circuit, rather than the switch circuit. The following describes the second embodiment with reference to the drawings, focusing on the differences from the first embodiment.

[0073] The circuit configuration of the high-frequency module according to this embodiment is the same as that of the first embodiment, and therefore illustration and description thereof will be omitted.

[0074] [2.1. Example of mounting high-frequency module 1A] An example of mounting the high-frequency module 1A will be described with reference to FIGS. 5 and 6. FIG. 5 is a plan view of the high-frequency module 1A according to this embodiment, seen through the main surface 90b of the module substrate 90 from the positive side of the z-axis. FIG. 6 is a cross-sectional view of the high-frequency module 1A according to this embodiment. The cross section of the high-frequency module 1A in FIG. 6 is taken along line vi-vi in ​​FIG. 5. Note that a plan view of the main surface 90a of the module substrate 90 of the high-frequency module 1A according to this embodiment is omitted because it is similar to FIG. 2 of the first embodiment.

[0075] 5 and 6, some components are labeled with letters to facilitate understanding of the relative positions of the components, but the actual components may not be labeled with the letters. Also, in Fig. 5, the resin member 92 that covers the components on the main surface 90b of the module substrate 90 and the metal shield 93 that covers the surface of the resin member 92 are not shown.

[0076] 5 and 6 show an exemplary configuration of the high-frequency module 1A, and the high-frequency module 1A can be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1A provided below should not be construed as limiting.

[0077] The high-frequency module 1A includes integrated circuits 81A and 82A, a module substrate 90, resin members 91 and 92, a metal shield 93, and a plurality of external connection terminals 150 in addition to the multiple circuit components shown in FIG.

[0078] The integrated circuit 81A is a semiconductor integrated circuit including a switch circuit 50 (SW), and is disposed on the main surface 90b of the module substrate 90. The integrated circuit 81A is in contact with the metal shield 93. However, the integrated circuit 81A does not necessarily have to be in contact with the metal shield 93.

[0079] The integrated circuit 82A is a semiconductor integrated circuit including a PA control circuit 20 (PAC) and a temperature sensor 40 (TS), and is disposed on the main surface 90b of the module substrate 90. The integrated circuit 82A is in contact with the metal shield 93. That is, the integrated circuit 82A is directly and physically connected to the metal shield 93. Specifically, at least a portion of the side surface of the integrated circuit 82A is in contact with a portion of the metal shield 93 formed on the side surface of the high-frequency module 1A. Within the integrated circuit 82A, the temperature sensor 40 is closer to the metal shield 93 than the PA control circuit 20. Specifically, the temperature sensor 40 is closer to the portion of the integrated circuit 82A that is in contact with the metal shield 93 than the PA control circuit 20.

[0080] The integrated circuit 82A does not have to include the PA control circuit 20, and may be, for example, an integrated circuit dedicated to the temperature sensor 40. In this case, the PA control circuit 20 may be included in an integrated circuit separate from the integrated circuit 82A (for example, the integrated circuit 81A or a new integrated circuit).

[0081] The integrated circuits 81A and 82A may be configured with, for example, CMOS. In this case, the integrated circuits 81A and 82A may be manufactured by an SOI process. Note that the integrated circuits 81A and 82A are not limited to CMOS.

[0082] The integrated circuit 81A may be integrated into an integrated circuit 82A. That is, the integrated circuit 82A may include the switch circuit 50 in addition to the PA control circuit 20 and the temperature sensor 40.

[0083] [2.2. Summary] As described above, the high-frequency module 1A according to this embodiment includes the module substrate 90, the transmit filter 30 arranged on the module substrate 90, the integrated circuit 82A arranged on the module substrate 90 and including the temperature sensor 40, the resin members 91 and 92 covering at least a portion of the surfaces of the transmit filter 30 and the integrated circuit 82A, and the metal shield 93 covering at least a portion of the surfaces of the resin members 91 and 92, and the transmit filter 30 and the integrated circuit 82A are each in contact with the metal shield 93.

[0084] According to this, by bringing both the transmit filter 30 and the integrated circuit 82A into contact with the metal shield 93, the integrated circuit 82A is thermally connected to the transmit filter 30 via the metal shield 93. Because the thermal conductivity of the metal shield 93 is higher than that of the resin members 91 and 92, it is possible to improve the measurement accuracy and / or time response of the temperature of the transmit filter 30. If the power amplifier 10 is controlled based on the temperature of the transmit filter 30 measured in this manner, it is possible to suppress deterioration and / or damage of the transmit filter 30 due to heat.

[0085] For example, the high-frequency module 1A according to this embodiment may further include a power amplifier 10 that is disposed on the module substrate 90 and connected to the transmit filter 30, and the power amplifier 10 does not need to be in contact with the metal shield 93.

[0086] In this way, the power amplifier 10 does not come into contact with the metal shield 93, so that heat transfer from the power amplifier 10 to the temperature sensor 40 via the metal shield 93 can be suppressed, and the accuracy of measuring the temperature of the transmit filter 30 can be further improved.

[0087] Also, for example, in the high-frequency module 1A according to this embodiment, the module substrate 90 may have principal surfaces 90a and 90b facing each other, the transmit filter 30 and the power amplifier 10 may be arranged on the principal surface 90a, and the integrated circuit 82A may be arranged on the principal surface 90b.

[0088] This allows the power amplifier 10, the transmit filter 30, and the integrated circuit 82A to be distributed over the two main surfaces 90a and 90b of the module substrate 90, which contributes to the miniaturization of the high-frequency module 1A.

[0089] Furthermore, for example, the high-frequency module 1A according to the present embodiment may further include a PA control circuit 20 configured to control the power amplifier 10 and included in the integrated circuit 82A.

[0090] In this way, the temperature sensor 40 and the PA control circuit 20 are included in one integrated circuit 82A, so the number of components can be reduced compared to when the temperature sensor 40 and the PA control circuit 20 are mounted on two separate components.

[0091] Furthermore, for example, in the high-frequency module 1A according to the present embodiment, the temperature sensor 40 may be closer to the metal shield 93 than the PA control circuit 20 within the integrated circuit 82A.

[0092] This allows the temperature sensor 40 to be disposed closer to the metal shield 93. Therefore, the heat transfer path from the transmit filter 30 to the temperature sensor 40 via the metal shield 93 can be shortened, and the measurement accuracy and / or time response of the temperature of the transmit filter 30 can be further improved.

[0093] The communication device 5 according to this embodiment also includes an RFIC 3 that processes high-frequency signals, and a high-frequency module 1A that is configured to transmit high-frequency signals between the RFIC 3 and the antenna 2.

[0094] This allows the communication device 5 to achieve the effects of the high-frequency module 1A.

[0095] (Embodiment 3) Next, a third embodiment will be described. This embodiment differs from the second embodiment mainly in that an integrated circuit including a PA control circuit and a temperature sensor is stacked on the power amplifier 10. The following describes this embodiment with reference to the drawings, focusing on the differences from the second embodiment.

[0096] The circuit configuration of the high-frequency module according to this embodiment is the same as that of the first embodiment, and therefore illustration and description thereof will be omitted.

[0097] [3.1. Example of mounting high-frequency module 1B] An example of mounting a high-frequency module 1B will be described with reference to FIGS. 7 to 9. FIG. 7 is a plan view of the high-frequency module 1B according to this embodiment, viewed from the positive side of the z-axis toward the main surface 90a of the module substrate 90. FIG. 8 is a plan view of the high-frequency module 1B according to this embodiment, viewed from the positive side of the z-axis toward the main surface 90b of the module substrate 90. FIG. 9 is a cross-sectional view of the high-frequency module 1B according to this embodiment. The cross-section of the high-frequency module 1B in FIG. 9 is taken along line ix-ix in FIGS. 7 and 8.

[0098] 7 to 9, some components are labeled with letters to facilitate understanding of the relative positions of the components, but the actual components may not be labeled with the letters. Also, in Figures 7 and 8, resin members 91 and 92 that cover the components on main surfaces 90a and 90b of module substrate 90 and metal shield 93 that covers the surfaces of resin members 91 and 92 are not shown.

[0099] 7 to 9 show an exemplary configuration of the high-frequency module 1B, and the high-frequency module 1B can be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the following description of the high-frequency module 1B should not be construed as limiting.

[0100] The high-frequency module 1B includes integrated circuits 81A and 82B, a module substrate 90, resin members 91 and 92, a metal shield 93, and a plurality of external connection terminals 150 in addition to the multiple circuit components shown in FIG.

[0101] As in the first and second embodiments, the transmit filter 30 (TxF) is disposed on the main surface 90a of the module substrate 90 and is in contact with the metal shield 93. The transmit filter 30 includes a plurality of external connection terminals including terminals 31 and 32. The terminals 31 and 32 are examples of a first terminal and a second terminal, respectively. As shown in FIG. 7, the terminal 31 is closer to the integrated circuit 82B than the terminal 32.

[0102] The integrated circuit 82B is a semiconductor integrated circuit including a PA control circuit 20 (PAC) and a temperature sensor 40 (TS), and is disposed on the main surface 90a of the module substrate 90. Specifically, the integrated circuit 82B is stacked on the power amplifier 10. The integrated circuit 82B is in contact with the metal shield 93. That is, the integrated circuit 82B is directly and physically connected to the metal shield 93. Specifically, at least a portion of the top surface of the integrated circuit 82B is in contact with a portion of the metal shield 93 formed on the top surface of the high-frequency module 1B. Within the integrated circuit 82B, the temperature sensor 40 is closer to the transmit filter 30 than the PA control circuit 20.

[0103] [3.2. Summary] As described above, the high-frequency module 1B according to this embodiment includes the module substrate 90, the transmit filter 30 arranged on the module substrate 90, the integrated circuit 82B arranged on the module substrate 90 and including the temperature sensor 40, the resin members 91 and 92 covering at least a portion of the surfaces of the transmit filter 30 and the integrated circuit 82B, and the metal shield 93 covering at least a portion of the surfaces of the resin members 91 and 92, and the transmit filter 30 and the integrated circuit 82B are each in contact with the metal shield 93.

[0104] According to this, by bringing both the transmit filter 30 and the integrated circuit 82B into contact with the metal shield 93, the integrated circuit 82B is thermally connected to the transmit filter 30 via the metal shield 93. Because the thermal conductivity of the metal shield 93 is higher than that of the resin members 91 and 92, it is possible to improve the measurement accuracy and / or time response of the temperature of the transmit filter 30. If the power amplifier 10 is controlled based on the temperature of the transmit filter 30 measured in this manner, it is possible to suppress deterioration and / or damage of the transmit filter 30 due to heat.

[0105] For example, the high-frequency module 1B according to this embodiment may further include a power amplifier 10 that is disposed on the module substrate 90 and connected to the transmit filter 30, and the power amplifier 10 does not need to be in contact with the metal shield 93.

[0106] In this way, the power amplifier 10 does not come into contact with the metal shield 93, so that heat transfer from the power amplifier 10 to the temperature sensor 40 via the metal shield 93 can be suppressed, and the accuracy of measuring the temperature of the transmit filter 30 can be further improved.

[0107] Furthermore, for example, in the high-frequency module 1B according to this embodiment, the module substrate 90 may have principal surfaces 90a and 90b facing each other, and the transmit filter 30, the integrated circuit 82B, and the power amplifier 10 may be disposed on the principal surface 90a.

[0108] According to this, the transmit filter 30, the integrated circuit 82B, and the power amplifier 10 are arranged on one main surface 90a of the module substrate 90, which simplifies the manufacturing process.

[0109] Furthermore, for example, the high-frequency module 1B according to the present embodiment may further include a PA control circuit 20 configured to control the power amplifier 10 and included in the integrated circuit 82B.

[0110] In this way, the temperature sensor 40 and the PA control circuit 20 are included in one integrated circuit 82B, so the number of components can be reduced compared to when the temperature sensor 40 and the PA control circuit 20 are mounted on two separate components.

[0111] Furthermore, for example, in the high-frequency module 1B according to the present embodiment, the temperature sensor 40 may be closer to the transmit filter 30 than the PA control circuit 20 within the integrated circuit 82B.

[0112] This allows the temperature sensor 40 to be disposed closer to the metal shield 93. Therefore, the heat transfer path from the transmit filter 30 to the temperature sensor 40 via the metal shield 93 can be shortened, and the measurement accuracy and / or time response of the temperature of the transmit filter 30 can be further improved.

[0113] For example, in the high-frequency module 1B according to this embodiment, the transmit filter 30 may include a terminal 31 connected to the power amplifier 10 and a terminal 32 connected to the antenna connection terminal 100, and the terminal 31 may be closer to the integrated circuit 82B than the terminal 32.

[0114] This allows the terminal 31 to be located closer to the integrated circuit 82B. A larger current flows through the terminal 31 connected to the power amplifier 10 than through the terminal 32 connected to the antenna connection terminal 100. As a result, a larger amount of heat is generated near the terminal 31, and the temperature near the terminal 31 is more likely to rise. Therefore, by shortening the heat transfer path from the vicinity of the terminal 31, where the temperature is more likely to rise, via the metal shield 93 to the temperature sensor 40, the temperature measurement accuracy and / or time response of the high-temperature portion of the transmit filter 30 can be improved. As a result, deterioration and / or damage to the transmit filter 30 due to heat can be suppressed.

[0115] Furthermore, for example, in the high-frequency module 1B according to the present embodiment, the integrated circuit 82B may be stacked on the power amplifier 10.

[0116] This can contribute to miniaturization of the high-frequency module 1B.

[0117] The communication device 5 according to this embodiment also includes an RFIC 3 that processes high-frequency signals, and a high-frequency module 1B that is configured to transmit high-frequency signals between the RFIC 3 and the antenna 2.

[0118] This allows the communication device 5 to achieve the effects of the high-frequency module 1B.

[0119] (Fourth embodiment) Next, a fourth embodiment will be described. This embodiment differs from the third embodiment mainly in that an integrated circuit including a PA control circuit and a temperature sensor is disposed between the power amplifier 10 and the transmit filter 30. The following describes this embodiment with reference to the drawings, focusing on the differences from the third embodiment.

[0120] The circuit configuration of the high-frequency module according to this embodiment is the same as that of the first embodiment, and therefore illustration and description thereof will be omitted.

[0121] [4.1. Example of mounting high frequency module 1C] An example of mounting a high-frequency module 1C will be described with reference to FIGS. 10 to 12. FIG. 10 is a plan view of the high-frequency module 1C according to the present embodiment, viewed from the positive side of the z-axis toward the main surface 90a of the module substrate 90. FIG. 11 is a plan view of the high-frequency module 1C according to the present embodiment, viewed from the positive side of the z-axis toward the main surface 90b of the module substrate 90. FIG. 12 is a cross-sectional view of the high-frequency module 1C according to the present embodiment. The cross-section of the high-frequency module 1C in FIG. 12 is taken along line xii-xii in FIGS. 10 and 11.

[0122] 10 to 12, some components are labeled with letters to facilitate understanding of the relative positions of the components, but the actual components may not be labeled with the letters. Also, in Figures 10 and 11, resin members 91 and 92 that cover the components on main surfaces 90a and 90b of module substrate 90 and metal shield 93 that covers the surfaces of resin members 91 and 92 are not shown.

[0123] 10 to 12 show an exemplary configuration of the high-frequency module 1C, and the high-frequency module 1C can be implemented using any of a wide variety of circuit implementations and circuit technologies. Therefore, the following description of the high-frequency module 1C should not be construed as limiting.

[0124] The high-frequency module 1C includes integrated circuits 81A and 82C, a module substrate 90, resin members 91 and 92, a metal shield 93, and a plurality of external connection terminals 150 in addition to the multiple circuit components shown in FIG.

[0125] As in the first to third embodiments, the transmit filter 30 (TxF) is disposed on the main surface 90a of the module substrate 90 and is in contact with the metal shield 93. As shown in FIGS. 10 and 12, the transmit filter 30 is closer to the temperature sensor 40 in the integrated circuit 82C than the power amplifier 10. The transmit filter 30 includes a plurality of external connection terminals including terminals 31 and 32. The terminals 31 and 32 are examples of a first terminal and a second terminal, respectively. As shown in FIG. 10, the terminal 31 is closer to the integrated circuit 82C than the terminal 32.

[0126] The integrated circuit 82C is a semiconductor integrated circuit including a PA control circuit 20 (PAC) and a temperature sensor 40 (TS), and is disposed on the main surface 90a of the module substrate 90. Specifically, the integrated circuit 82C is disposed between the power amplifier 10 and the transmit filter 30. The integrated circuit 82C is in contact with the metal shield 93. That is, the integrated circuit 82C is directly and physically connected to the metal shield 93. Specifically, at least a portion of the top surface of the integrated circuit 82C is in contact with a portion of the metal shield 93 formed on the top surface of the high-frequency module 1C. Within the integrated circuit 82C, the temperature sensor 40 is closer to the transmit filter 30 than the PA control circuit 20.

[0127] The integrated circuit 82C does not have to include the PA control circuit 20, and may be, for example, an integrated circuit dedicated to the temperature sensor 40. In this case, the PA control circuit 20 may be included in an integrated circuit separate from the integrated circuit 82C (for example, the integrated circuit 81A or a new integrated circuit).

[0128] [4.2. Summary] As described above, the high-frequency module 1C according to this embodiment includes the module substrate 90, the transmit filter 30 arranged on the module substrate 90, the integrated circuit 82C arranged on the module substrate 90 and including the temperature sensor 40, the resin members 91 and 92 covering at least a portion of the surfaces of the transmit filter 30 and the integrated circuit 82C, and the metal shield 93 covering at least a portion of the surfaces of the resin members 91 and 92, and the transmit filter 30 and the integrated circuit 82C are each in contact with the metal shield 93.

[0129] According to this, by bringing both the transmit filter 30 and the integrated circuit 82C into contact with the metal shield 93, the integrated circuit 82C is thermally connected to the transmit filter 30 via the metal shield 93. Because the thermal conductivity of the metal shield 93 is higher than that of the resin members 91 and 92, it is possible to improve the measurement accuracy and / or time response of the temperature of the transmit filter 30. If the power amplifier 10 is controlled based on the temperature of the transmit filter 30 measured in this manner, it is possible to suppress deterioration and / or damage of the transmit filter 30 due to heat.

[0130] Furthermore, for example, the high-frequency module 1C according to this embodiment may further include a power amplifier 10 that is disposed on the module substrate 90 and connected to the transmit filter 30, and the power amplifier 10 does not need to be in contact with the metal shield 93.

[0131] In this way, the power amplifier 10 does not come into contact with the metal shield 93, so that heat transfer from the power amplifier 10 to the temperature sensor 40 via the metal shield 93 can be suppressed, and the accuracy of measuring the temperature of the transmit filter 30 can be further improved.

[0132] Furthermore, for example, in the high-frequency module 1C according to this embodiment, the module substrate 90 may have principal surfaces 90a and 90b facing each other, and the transmit filter 30, the integrated circuit 82C, and the power amplifier 10 may be disposed on the principal surface 90a.

[0133] According to this, the transmit filter 30, the integrated circuit 82C, and the power amplifier 10 are arranged on one main surface 90a of the module substrate 90, which simplifies the manufacturing process.

[0134] Furthermore, for example, the high-frequency module 1C according to the present embodiment may further include a PA control circuit 20 configured to control the power amplifier 10 and included in the integrated circuit 82C.

[0135] In this way, the temperature sensor 40 and the PA control circuit 20 are included in one integrated circuit 82C, so the number of components can be reduced compared to when the temperature sensor 40 and the PA control circuit 20 are mounted on two separate components.

[0136] Furthermore, for example, in the high-frequency module 1C according to the present embodiment, the temperature sensor 40 may be closer to the transmit filter 30 than the PA control circuit 20 within the integrated circuit 82C.

[0137] This allows the temperature sensor 40 to be disposed closer to the metal shield 93. Therefore, the heat transfer path from the transmit filter 30 to the temperature sensor 40 via the metal shield 93 can be shortened, and the measurement accuracy and / or time response of the temperature of the transmit filter 30 can be further improved.

[0138] For example, in the high-frequency module 1C according to this embodiment, the transmit filter 30 may include a terminal 31 connected to the power amplifier 10 and a terminal 32 connected to the antenna connection terminal 100, and the terminal 31 may be closer to the integrated circuit 82C than the terminal 32.

[0139] This allows the terminal 31 to be located closer to the integrated circuit 82C. A larger current flows through the terminal 31 connected to the power amplifier 10 than through the terminal 32 connected to the antenna connection terminal 100. As a result, a larger amount of heat is generated near the terminal 31, and the temperature near the terminal 31 is more likely to rise. Therefore, by shortening the heat transfer path from the vicinity of the terminal 31, where the temperature is more likely to rise, to the temperature sensor 40 via the metal shield 93, it is possible to improve the measurement accuracy and / or time response of the temperature of the high-temperature portion of the transmit filter 30. As a result, it is possible to suppress deterioration and / or damage of the transmit filter 30 due to heat.

[0140] Furthermore, for example, in the high-frequency module 1C according to the present embodiment, the integrated circuit 82C may be disposed between the power amplifier 10 and the transmit filter 30, and the transmit filter 30 may be closer to the temperature sensor 40 than the power amplifier 10.

[0141] This allows the transmit filter 30 to be located closer to the temperature sensor 40. Therefore, the heat transfer path from the transmit filter 30 to the temperature sensor 40 via the metal shield 93 can be shortened, and the measurement accuracy and / or time response of the temperature of the transmit filter 30 can be further improved.

[0142] The communication device 5 according to this embodiment also includes an RFIC 3 that processes high-frequency signals, and a high-frequency module 1C that is configured to transmit high-frequency signals between the RFIC 3 and the antenna 2.

[0143] This allows the communication device 5 to achieve the effects of the high-frequency module 1C.

[0144] (Other embodiments) Although the high-frequency module and communication device according to the present invention have been described above based on the embodiments, the high-frequency module and communication device according to the present invention are not limited to the above embodiments. The present invention also includes other embodiments realized by combining any of the components in the above embodiments, modifications obtained by applying various modifications to the above embodiments that would occur to those skilled in the art without departing from the spirit of the present invention, and various devices incorporating the above-mentioned high-frequency module or communication device.

[0145] For example, in the circuit configuration of the high-frequency module or communication device according to each of the above embodiments, other circuit elements, wiring, etc. may be inserted between the paths connecting the circuit elements and signal paths disclosed in the drawings. For example, in the high-frequency modules 1, 1A, 1B, and 1C, an impedance matching circuit may be connected between the power amplifier 10 and the transmit filter 30 and / or between the transmit filter 30 and the antenna connection terminal 100.

[0146] Furthermore, for example, the first embodiment may be combined with the second embodiment. In this case, the high-frequency module may include an integrated circuit including the PA control circuit 20, the switch circuit 50, and the temperature sensor .

[0147] The features of the high frequency module and communication device described based on the above embodiments will be described below.

[0148] <1> a module substrate; a transmission filter disposed on the module substrate; an integrated circuit disposed on the module substrate and including a temperature sensor; a resin member that covers at least a portion of the transmit filter and the integrated circuit; a metal shield covering at least a portion of the surface of the resin member, the transmit filter and the integrated circuit are each in contact with the metal shield; High frequency module.

[0149] <2> the high-frequency module further includes a power amplifier disposed on the module substrate and connected to the transmit filter; the power amplifier is not in contact with the metal shield; <1> The high-frequency module according to claim 1.

[0150] <3> the module substrate has a first main surface and a second main surface facing each other, the transmit filter and the power amplifier are disposed on the first principal surface; the integrated circuit is disposed on the second main surface; <2> The high-frequency module according to claim 1.

[0151] <4> the high-frequency module further includes a switch circuit connected between the transmission filter and an antenna connection terminal and included in the integrated circuit. <3> The high-frequency module according to claim 1.

[0152] <5> Within the integrated circuit, the temperature sensor is closer to the metal shield than the switch circuit. <4> The high-frequency module according to claim 1.

[0153] <6> the high frequency module further includes a PA control circuit configured to control the power amplifier and included in the integrated circuit; <3> ~ <5> 10. The high-frequency module according to claim 9, wherein:

[0154] <7> Within the integrated circuit, the temperature sensor is closer to the metal shield than the PA control circuit. <6> The high-frequency module according to claim 1.

[0155] <8> the module substrate has a first main surface and a second main surface facing each other, the transmit filter, the integrated circuit, and the power amplifier are disposed on the first main surface; <2> The high-frequency module according to claim 1.

[0156] <9> the high frequency module further includes a PA control circuit configured to control the power amplifier and included in the integrated circuit; <8> The high-frequency module according to claim 1.

[0157] <10> Within the integrated circuit, the temperature sensor is closer to the transmit filter than the PA control circuit. <9> The high-frequency module according to claim 1.

[0158] <11> the transmit filter includes a first terminal connected to the power amplifier and a second terminal connected to an antenna connection terminal; the first terminal is closer to the integrated circuit than the second terminal; <8> ~ <10> 10. The high-frequency module according to claim 9, wherein:

[0159] <12> the integrated circuit is stacked on the power amplifier; <9> ~ <11> 10. The high-frequency module according to claim 9, wherein:

[0160] <13> the integrated circuit is disposed between the power amplifier and the transmit filter; the transmit filter is closer to the temperature sensor than the power amplifier; <8> ~ <11> 10. The high-frequency module according to claim 9, wherein:

[0161] <14> a signal processing circuit for processing high frequency signals; configured to transmit the high frequency signal between the signal processing circuit and an antenna <1> ~ <13> and a high-frequency module according to any one of the above. Communication equipment. [Industrial Applicability]

[0162] The present invention can be widely used as a high-frequency module disposed in the front end of communication devices such as mobile phones. [Explanation of symbols]

[0163] 1, 1A, 1B, 1C high frequency modules 2 antennas 3 RFIC 4. BBIC 5. Communications equipment 10 Power Amplifier 20 PA control circuit 30 Transmission Filter Terminals 31 and 32 40 Temperature Sensor 50 Switch Circuit 81, 81A, 82, 82A, 82B, 82C Integrated Circuits 90 Module Board 90a, 90b main surface 91, 92 Resin parts 93 Metal Shield 100 Antenna connection terminal 110 High frequency input terminal 150 External connection terminal 501 Common terminal 502 selection terminal

Claims

1. a module substrate; a transmission filter disposed on the module substrate; an integrated circuit disposed on the module substrate and including a temperature sensor; a resin member covering at least a part of the transmit filter and the integrated circuit; a metal shield covering at least a portion of the surface of the resin member, the transmit filter and the integrated circuit are each in contact with the metal shield; High frequency module.

2. the high-frequency module further includes a power amplifier disposed on the module substrate and connected to the transmit filter; the power amplifier is not in contact with the metal shield; The high frequency module according to claim 1 .

3. the module substrate has a first main surface and a second main surface facing each other, the transmit filter and the power amplifier are disposed on the first principal surface; the integrated circuit is disposed on the second major surface; The high frequency module according to claim 2 .

4. the high-frequency module further includes a switch circuit connected between the transmission filter and an antenna connection terminal and included in the integrated circuit. The high frequency module according to claim 3 .

5. Within the integrated circuit, the temperature sensor is closer to the metal shield than the switch circuit. The high frequency module according to claim 4 .

6. the high frequency module further includes a PA control circuit configured to control the power amplifier and included in the integrated circuit; The high frequency module according to any one of claims 3 to 5.

7. Within the integrated circuit, the temperature sensor is closer to the metal shield than the PA control circuit. The high frequency module according to claim 6.

8. the module substrate has a first main surface and a second main surface facing each other, the transmit filter, the integrated circuit, and the power amplifier are disposed on the first main surface. The high frequency module according to claim 2 .

9. the high frequency module further includes a PA control circuit configured to control the power amplifier and included in the integrated circuit; The high frequency module according to claim 8 .

10. Within the integrated circuit, the temperature sensor is closer to the transmit filter than the PA control circuit. The high frequency module according to claim 9 .

11. the transmit filter includes a first terminal connected to the power amplifier and a second terminal connected to an antenna connection terminal; the first terminal is closer to the integrated circuit than the second terminal; The high frequency module according to any one of claims 8 to 10.

12. the integrated circuit is stacked on the power amplifier; The high frequency module according to any one of claims 9 to 10.

13. the integrated circuit is disposed between the power amplifier and the transmit filter; the transmit filter is closer to the temperature sensor than the power amplifier; The high frequency module according to any one of claims 8 to 10.

14. a signal processing circuit for processing high frequency signals; and a high-frequency module according to any one of claims 1 to 5 and 8 to 10, configured to transmit the high-frequency signal between the signal processing circuit and an antenna. Communication equipment.

Images