Substrate processing apparatus and article manufacturing method

Abstract

To improve throughput of processing of drying a film of a substrate.SOLUTION: A substrate processing apparatus comprises: a chamber; a pressure reducing mechanism that reduces the pressure in an internal space of the chamber; a substrate holding part that holds a substrate having a film in the internal space; a baffle cover that covers the substrate held by the substrate holding part in the internal space; a gas analyzer that detects specific gas in a substrate housing space surrounded by the substrate holding part and the baffle cover; and a controller that determines the completion of drying of the film on the basis of output from the gas analyzer.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] Patent Document 1 describes a substrate processing apparatus in which a substrate containing a sublimable substance is placed on a substrate holder in a processing chamber and heated in the processing chamber to evaporate the sublimable substance, thereby removing the sublimable substance from the substrate. A vacuum pump is connected to the processing chamber via a connector, and a detector is provided between the vacuum pump and the processing chamber. The detector detects vaporized gas generated by sublimation of the sublimable substance. If the concentration of the vaporized gas detected by the detector is equal to or greater than a predetermined value, it can be determined that the sublimable substance is currently sublimating. On the other hand, if the concentration of the vaporized gas detected by the detector becomes less than a predetermined value, it can be determined that the sublimation of the sublimable substance has ended. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2016-25233 Summary of the Invention [Problem to be solved by the invention]

[0004] In an apparatus that performs a process for drying a film on a substrate, the timing for completing the process can be determined so as to ensure that the film is sufficiently dried. However, if the detection of the fact that the film is sufficiently dried is delayed, it is difficult to improve throughput.

[0005] An object of the present invention is to provide an advantageous technique for improving the throughput of a process for drying a film on a substrate. [Means for solving the problem]

[0006] One aspect of the present invention relates to a substrate processing apparatus, comprising: a chamber; a pressure reduction mechanism for reducing the pressure in the internal space of the chamber; a substrate holding part for holding a substrate having a film thereon in the internal space; a baffle cover for covering the substrate held by the substrate holding part in the internal space; a gas analyzer for detecting a specific gas in a substrate accommodating space surrounded by the substrate holding part and the baffle cover; and a controller for determining completion of drying of the film based on the output of the gas analyzer. [Effects of the Invention]

[0007] According to the present invention, an advantageous technique is provided for improving the throughput of a process for drying a film on a substrate. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a schematic cross-sectional view showing a configuration of a substrate processing apparatus according to an embodiment; [Figure 2] FIG. 2 is a plan view looking downward from the AA plane in FIG. [Figure 3] FIG. 2 is an enlarged cross-sectional view of a portion of the substrate processing apparatus of FIG. [Figure 4] 5A to 5C are diagrams for explaining advantages of the substrate processing apparatus according to the embodiment; [Figure 5] 10A and 10B are diagrams illustrating an example of pressure control in the internal space during a drying process. [Figure 6] FIG. 2 is a diagram showing a schematic view of substrate transportation (loading and unloading). [Figure 7] 1A to 1C are diagrams illustrating a substrate processing method as a method of using the substrate processing apparatus according to the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe multiple features, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate identical or similar components, and redundant explanations will be omitted. In the embodiments and drawings described below, directions are indicated by an XYZ coordinate system. In the XYZ coordinate system, the XY plane is the horizontal direction, and the negative direction of the Z axis can be the vertical direction.

[0010] Fig. 1 is a schematic cross-sectional view showing the configuration of a substrate processing apparatus SPA according to an embodiment. Fig. 2 is a plan view looking downward from the AA plane in Fig. 1. Fig. 3 is an enlarged view of a portion of Fig. 1. The substrate processing apparatus SPA can be configured to process a substrate S having a film F. More specifically, the substrate processing apparatus SPA can be configured to perform a drying process for drying the film F on the substrate S.

[0011] The film F may be, for example, a film composed of a solution containing a solute and a solvent for forming an organic film (hereinafter referred to as a solution film). The solvent may have a property that evaporation is promoted in a reduced pressure environment lower than atmospheric pressure. Evaporation of the solvent may be promoted, for example, at a temperature higher than room temperature (25°C). The organic film may be, for example, any of the hole injection layer, hole transport layer, light-emitting layer, electron transport layer, and electron injection layer of an organic light-emitting diode (OLED) device. The production of an organic EL device may include a process of forming each organic film, such as the hole injection layer, hole transport layer, light-emitting layer, electron transport layer, and electron injection layer, on a substrate. The process of forming each organic film on a substrate may include a coating process of disposing or coating a solution film on the substrate by a printing method or the like, a drying process of drying the solution film to form a dry film, and a baking process of baking the dry film.

[0012] The substrate processing apparatus SPA may include a chamber 10. The chamber 10 is a member that defines an internal space SP1 that is separated from an external space. The chamber 10 may also be understood as a member that surrounds the internal space SP1. Hereinafter, the internal space SP1 whose outer edge is defined by the chamber 10 will also be referred to as the internal space SP1 of the chamber 10. The chamber 10 may include at least one gate valve 12. A substrate S to be subjected to a drying process may be transferred from the external space of the chamber 10 to the internal space SP1 through the gate valve 12. Furthermore, the substrate S that has undergone the drying process may be transferred from the internal space SP1 to the external space.

[0013] The substrate processing apparatus SPA may further include a decompression mechanism 30 that decompresses the internal space SP1 of the chamber 10. The decompression mechanism 30 may include, for example, a plurality of pumps, which may include at least one of a dry pump and a diaphragm vacuum pump. The plurality of pumps may further include, for example, at least one of a turbomolecular pump, a cryopump, a sorption pump, an oil diffusion pump, a mechanical booster pump, an ejector pump, and an oil rotary vacuum pump.

[0014] The substrate processing apparatus SPA may further include a substrate holding part 20 that holds a substrate S having a film F thereon. The substrate holding part 20 is disposed in the internal space SP1. The substrate processing apparatus SPA may further include a temperature control part 70 that controls the temperature of the substrate holding part 20. The temperature control part 70 may typically include a heater that heats the substrate holding part 20, but may also include a cooler that cools the substrate holding part 20. The temperature control part 70 may be understood as a component that controls the temperature of the substrate S or the film F on the substrate S.

[0015] The substrate processing apparatus SPA may further include a baffle cover 40 that covers the substrate S held by the substrate holding part 20 in the internal space SP1. The baffle cover 40 may have a plurality of openings 42, as illustrated in FIGS. 1 and 2. The arrangement and dimensions of the plurality of openings 42 may be determined so that the film F on the substrate S is dried uniformly. The substrate holding part 20 and the baffle cover 40 may define a substrate accommodating space SP2 surrounded by the substrate holding part 20 and the baffle cover 40 when the baffle cover 40 covers the substrate S. The baffle cover 40 need not necessarily have any openings, as long as it has a configuration that allows the substrate accommodating space SP2 to communicate with the internal space SP1 when the baffle cover 40 covers the substrate S.

[0016] The substrate processing apparatus SPA may include a gas analyzer 60 that detects a specific gas in the substrate accommodation space SP2 surrounded by the substrate holder 20 and the baffle cover 40. The gas analyzer 60 may be a residual gas analyzer (RGA) such as a mass spectrometer. The specific gas detected by the gas analyzer 60 is a gas evaporated from the film F on the substrate S, i.e., the gas to be detected. More specifically, the specific gas may be a solvent (gas). FIG. 3 schematically shows how the solvent (specific gas) released by evaporation from the film F on the substrate S is discharged from the internal space SP1 by the decompression mechanism 30.

[0017] The substrate processing apparatus SPA may further include a connection portion 62 connecting a gas inlet of the gas analyzer 60 to the substrate accommodating space SP2. The gas inlet is an opening through which the gas analyzer 60 takes in gas. The connection portion 62 may be a flexible tube, such as a glass fiber tube. Alternatively, the connection portion 62 may be a bellows. The connection portion 62 has a first end E1 and a second end E2. The first end E1 is connected to the gas inlet of the gas analyzer 60, and the second end E2 may be positioned to protrude from the inner surface of the baffle cover 40 into the substrate accommodating space SP2. The second end E2 may be positioned to protrude from the inner surface of the sidewall of the baffle cover 40 into the substrate accommodating space SP2, for example.

[0018] The substrate processing apparatus SPA may include a controller 90. The controller 90 may be configured to control a drying process for drying the film F on the substrate S. The controller 90 may be configured to determine the completion of drying the film F on the substrate S based on the output of the gas analyzer 60. The controller 90 may be configured to determine that the drying of the film F on the substrate S (the drying process for drying the film F) has been completed, for example, when the output of the gas analyzer 60 indicates that the amount of a specific gas is a preset amount. The controller 90 may be configured, for example, by a PLD (abbreviation for Programmable Logic Device) such as an FPGA (abbreviation for Field Programmable Gate Array), an ASIC (abbreviation for Application Specific Integrated Circuit), a general-purpose or dedicated computer with an embedded program, or a combination of all or part of these.

[0019] The advantages of using the gas analyzer 60 to detect a specific gas in the substrate accommodation space SP2 surrounded by the substrate holder 20 and the baffle cover 40 will now be described with reference to FIG. 4. In FIG. 4, the dotted curve illustrates the concentration of the specific gas (solvent evaporated from the film F on the substrate S) in the internal space SP1. In FIG. 4, the solid curve illustrates the concentration of the specific gas (solvent evaporated from the film F on the substrate S) in the substrate accommodation space SP2. Heating the substrate S promotes evaporation of the film F, thereby causing the solvent concentration in the substrate accommodation space SP2 to decrease more quickly than in the internal space SP1. The solvent released by evaporation from the film F on the substrate S placed in the substrate accommodation space SP2 may move to the internal space SP1 through the multiple openings 42 in the baffle cover 40 and condense on and adhere to the inner surface of the chamber 10. While a large amount of solvent adheres to the inner surface of the chamber 10, the pressure in the internal space SP1 can be maintained at a pressure close to the vapor pressure of the solvent. Then, once the solvent is mostly removed from the inner surface of the chamber 10, the pressure in the internal space SP1 may begin to drop from a pressure close to the vapor pressure of the solvent to a lower pressure. Therefore, even if the solvent concentration in the substrate accommodating space SP2 is sufficiently reduced, the solvent concentration in the internal space SP1 between the baffle cover 40 and the chamber 10 may not decrease quickly and may continue to remain at a value much higher than the solvent concentration in the substrate accommodating space SP2. Therefore, using the gas analyzer 60 to detect a specific gas in the substrate accommodating space SP2 surrounded by the substrate holder 20 and the baffle cover 40 is advantageous for quickly detecting the completion of the drying process of the film F on the substrate S. This is effective for quickly completing the drying process of the film F on the substrate S and improving throughput.

[0020] 5 illustrates an example of pressure control in the internal space SP1 during a drying process that can be controlled by the controller 90. This pressure control can include control of the decompression mechanism 30. The drying process can include, for example, multiple drying steps, and the controller 90 can control the decompression mechanism 30 so that the multiple drying steps are performed. In the example of FIG. 5, the drying process includes a first drying step D1, a second drying step D2, a third drying step D3, and a fourth drying step D4, but the number of drying steps included in the drying process is not limited to a specific number.

[0021] In the first step D1, for example, the film F on the substrate S is dried while the pressure in the internal space SP1 is reduced from atmospheric pressure to a first pressure that is higher than the vapor pressure of the solvent in the film F on the substrate S. In the second step D2, for example, the film F on the substrate S is dried while the pressure in the internal space SP1 is maintained at the first pressure. In the third step D3, for example, the film F on the substrate S is dried while the pressure in the internal space SP1 is reduced to a second pressure that is lower than the first pressure and lower than the pressure of the solvent. In the fourth step D4, for example, the film F on the substrate S is dried while the pressure in the internal space SP1 is maintained at the second pressure.

[0022] In one example, the controller 90 can be configured to determine the end of the last drying step D4 of the multiple drying steps D1 to D4 based on the output of the gas analyzer 60. As illustrated in Fig. 5, the multiple drying steps included in the drying process can have different pressures in the internal space SP1. However, the multiple drying steps included in the drying process may include two or more drying steps in which the pressures in the internal space SP1 are the same.

[0023] The substrate processing apparatus SPA may further include a gas introduction unit 50 that introduces an inert gas into the internal space SP1 of the chamber 10. In one example, the controller 90 may control the gas introduction unit 50 so that the inert gas is introduced into the internal space SP1 in at least the last drying step (drying step D4 in the example of FIG. 5) among multiple drying steps included in the drying process. The gas introduction unit 50 may include an introduction tube 52 extending from (the inner surface of) the chamber 10 to the substrate accommodation space SP2. In this case, the gas introduction unit 50 introduces the inert gas into the substrate accommodation space SP2 disposed within the internal space SP1. The introduction tube 52 may be arranged so that the inert gas is supplied to the substrate accommodation space SP2 through a through-hole provided in the sidewall of the baffle cover 40. The tip of the introduction tube 52 may protrude from the inner surface of the baffle cover 40 into the substrate accommodation space SP. The introduction tube 52 may be a flexible tube. The gas introduction part 50 may have a gas introduction port arranged to face the connection part 62 (the second end E2 of the connection part 62) in the substrate accommodating space SP2.

[0024] Supplying an inert gas to the substrate accommodating space SP2 is advantageous for guiding solvent evaporating from the film F on the substrate S to the second end E2 of the connecting portion 62. Supplying an inert gas to the substrate accommodating space SP2 is also advantageous for enabling the noise filter included in some gas analyzers 60 to function. Such a noise filter may require the detection space to have a pressure equal to or greater than a predetermined pressure. Specifically, some gas analyzers 60 may include an ion source, a quadrupole mass filter, a detector, and a noise filter disposed between the ion source and the quadrupole mass filter. The noise filter is configured to allow stable elements ionized in the ion source to pass through the noise filter and reach the quadrupole mass filter, but to block metastable molecules (noise sources). However, if the detection space is lower than the predetermined pressure, the free path of the elements becomes longer and faster, preventing the ionized stable molecules from passing through the noise filter. If the detection space is lower than the predetermined pressure, detection accuracy may be reduced.

[0025] The substrate processing apparatus SPA may further include a lifting mechanism 80 that lifts and lowers the baffle cover 40. The lifting mechanism 80 may be used when transporting the substrate S to and from the substrate holding unit 20. The substrate S may be transported by a transport mechanism RB, as illustrated in FIG. 6 . When transporting (loading) the substrate to and from the substrate holding unit 20, the lifting mechanism 80 may position the baffle cover 40 at a first height in response to, for example, a command from the controller 90. Here, the first height is a height above the substrate holding unit 20 at which the substrate transport mechanism RB can transport the substrate S. When drying the film F on the substrate S, the lifting mechanism 80 may position the baffle cover 40 at a second height, which is lower than the first height, in response to, for example, a command from the controller 90. Here, the second height is a height for performing a drying process to dry the film F on the substrate S, as illustrated in FIG. 1 .

[0026] To uniformly dry the film F on the substrate S over the entire substrate S, it is advantageous to ensure a suitable distance between the upper surface of the baffle cover 40 and the ceiling of the chamber 10. However, this requires an increase in the height of the substrate processing apparatus SPA. The substrate holder 20 may be lowered when transferring the substrate S to and from the substrate holder 20, but this may further increase the height of the substrate processing apparatus SPA. On the other hand, the configuration in which the lifting mechanism 80 lifts and lowers the baffle cover 40 as described above is advantageous because it utilizes the space between the upper surface of the baffle cover 40 and the ceiling of the chamber 10 to uniformly dry the film on the substrate S. In other words, the configuration in which the lifting mechanism 80 lifts and lowers the baffle cover 40 is advantageous for preventing a further increase in the height of the substrate processing apparatus SPA.

[0027] FIG. 7 illustrates a substrate processing method as a method of using the substrate processing apparatus SPA. The substrate processing method illustrated in FIG. 7 can be controlled by a controller 90. In step S1, a substrate S having a film F may be transported (loaded) to a substrate holder 20 disposed in the internal space SP1 of the chamber 10 and placed on the substrate holder 20. In step S2, the substrate S placed on the substrate holder 20 may be covered with a baffle cover 40. In step S3, a drying process is initiated in which the internal space SP1 of the chamber 10 is depressurized to dry the film F on the substrate S. In step S4, a specific gas (solvent) in the substrate accommodation space SP2 surrounded by the substrate holder 20 and the baffle cover 40 is detected by a gas analyzer 60. In step S5, it is determined based on the output of the gas analyzer 60 whether to terminate the drying process for drying the film on the substrate S. Here, if the drying process includes multiple drying steps, step S5 may be performed after the start of the last drying step among the multiple drying steps. If it is determined in step S5 that the drying process is to be terminated, step S6 is performed, otherwise step S4 is performed again. In step S6, the substrate S held by the substrate holder 20 is transferred (unloaded) to the space outside the chamber 10.

[0028] The substrate S transferred to the space outside the chamber 10 is then further processed, whereby a target article is obtained from the processed substrate S. Such processing may include a baking step of the dried film, formation of a further film (disposition (coating), drying, baking), formation of an electrode, formation of a sealing film, etc.

[0029] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0030] 10: chamber, SP1: internal space, 20: substrate holder, 30: pressure reducing mechanism, 40: baffle cover, SP2: substrate accommodation space, 60: gas analyzer, SPA: substrate processing apparatus

Claims

1. a chamber; a decompression mechanism for decompressing the internal space of the chamber; a substrate holder that holds a substrate having a film in the internal space; a baffle cover that covers the substrate held by the substrate holder in the internal space; a gas analyzer for detecting a specific gas in a substrate accommodating space surrounded by the substrate holder and the baffle cover; a controller that determines completion of drying of the film based on an output of the gas analyzer; A substrate processing apparatus comprising:

2. The baffle cover has a plurality of openings. The substrate processing apparatus according to claim 1 .

3. a connecting portion that connects a gas inlet of the gas analyzer and the substrate accommodating space; 3. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is a processing chamber.

4. the connecting portion has a first end and a second end, the first end being connected to the gas inlet of the gas analyzer, and the second end being disposed so as to protrude from the inner surface of the baffle cover into the substrate accommodating space; The substrate processing apparatus according to claim 3 .

5. The second end is disposed so as to protrude from the inner surface of the side wall of the baffle cover into the substrate accommodating space.

5. The substrate processing apparatus according to claim 4, wherein the substrate processing apparatus is a processing chamber.

6. the controller controls the pressure reducing mechanism so that a plurality of drying processes are performed; determining the completion of the last drying step among the plurality of drying steps based on the output of the gas analyzer; 6. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is a processing chamber.

7. In the plurality of drying steps, the pressures in the internal spaces are different from each other. The substrate processing apparatus according to claim 6 .

8. Further provided is a gas introduction part that introduces an inert gas into the internal space, the controller controls the gas introduction unit so that the inert gas is introduced into the internal space at least during the final drying step.

8. The substrate processing apparatus according to claim 6, wherein the substrate processing apparatus is a substrate processing apparatus.

9. the gas introduction section includes an introduction tube extending from the chamber to the substrate accommodating space; The substrate processing apparatus according to claim 8 .

10. the inlet tube is arranged so that the inert gas is supplied to the substrate accommodating space through a through hole provided in a side wall of the baffle cover. The substrate processing apparatus according to claim 9 .

11. Further provided is a gas introduction part that introduces an inert gas into the internal space.

6. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is a processing chamber.

12. the gas introduction section includes an introduction tube extending from the chamber to the substrate accommodating space; The substrate processing apparatus according to claim 11 .

13. the inlet tube is arranged so that the inert gas is supplied to the substrate accommodating space through a through hole provided in a side wall of the baffle cover. The substrate processing apparatus according to claim 12 .

14. a gas introduction unit that introduces an inert gas into the substrate accommodating space; the gas introduction section has a gas introduction port disposed in the substrate accommodating space so as to face the connection section; 6. The substrate processing apparatus according to claim 3, wherein the substrate processing apparatus is a processing chamber.

15. Further, a temperature control unit is provided to control the temperature of the substrate holder.

15. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is a processing chamber.

16. Further provided is a lifting mechanism for lifting and lowering the baffle cover.

16. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is a processing chamber.

17. the lifting mechanism positions the baffle cover at a first height when the substrate is transported to and from the substrate holding unit, and positions the baffle cover at a second height lower than the first height when the film on the substrate is dried. The substrate processing apparatus according to claim 16 .

18. transporting the substrate having the film thereon to a substrate holder disposed in the interior space of the chamber; covering the substrate placed on the substrate holder with a baffle cover; reducing the pressure in the internal space to dry the membrane; determining completion of drying of the film based on an output of a gas analyzer that detects a specific gas in a substrate accommodating space surrounded by the substrate holder and the baffle cover; A substrate processing method comprising:

19. transporting the substrate held by the substrate holder to an external space of the chamber; processing the substrate transported to the external space to obtain an article; The method of claim 18, further comprising:

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