Multilayer piezoelectric substrate with ground structure

Abstract

To provide an acoustic wave device, an acoustic wave filter, and a method for manufacturing an acoustic wave device that attenuate electrical coupling between signals on input ports, output ports, and other signal pads due to parasitic capacitance.SOLUTION: A surface acoustic wave resonator 138a has a piezoelectric layer 142 disposed on a carrier substrate 152, an interdigital transducer (IDT) electrode 144 disposed on the piezoelectric layer, a ground structure 162a disposed on the piezoelectric layer, a conductive layer 158 disposed between the piezoelectric layer and the carrier substrate, and a via 166 which is an electrical path electrically connecting the conductive layer to the ground structure.SELECTED DRAWING: Figure 4D

Description

[Technical Field]

[0001] Cross-reference to priority application This application is based on a U.S. provisional patent filed on December 26, 2018, entitled "Multilayer Piezoelectric Substrate." This application claims the benefit of priority to application Ser. No. 62 / 785,011, the disclosure of which is incorporated herein by reference in its entirety. More incorporated.

[0002] TECHNICAL FIELD The present disclosure relates to an acoustic wave filter. [Background technology]

[0003] Acoustic wave filters can be implemented in radio frequency electronic systems. The filters in the radio frequency front end of the phone may include acoustic wave filters. The acoustic wave filter may be a band-pass filter. For example, two acoustic wave filters can be arranged as a duplexer. It is possible.

[0004] An acoustic wave filter is a filter that includes multiple resonators arranged to filter radio frequency signals. Examples of acoustic wave filters include surface acoustic wave (SAW) filters and bulk acoustic wave (BAW) filters. Surface acoustic wave (BAW) filters include surface acoustic wave resonators (SAW) that are interdigitated on a piezoelectric substrate. The surface acoustic wave resonator may include an interdigital transducer electrode. A surface acoustic wave can be generated on the surface of the piezoelectric layer on which the transducer electrodes are disposed. The surface acoustic wave resonator may include a multi-layer piezoelectric substrate. Summary of the Invention

[0005] Each of the claimed innovations has several aspects, each of which is Not only one of the elements is responsible for the desired attribute. Without limiting the scope, a brief summary of some prominent features of the disclosure will now be described.

[0006] In one aspect, an acoustic wave device is disclosed, the acoustic wave device comprising a substrate over a piezoelectric layer. an interdigital transducer electrode on the piezoelectric layer; and a ground electrode on the piezoelectric layer. The acoustic wave device also includes a conductive layer disposed between the piezoelectric layer and the substrate. The conductive layer is electrically connected to a ground structure.

[0007] In one embodiment, a via extending through at least a portion of the piezoelectric layer connects the conductive layer and the ground structure. The via may be a filled via that is filled with a conductive material. The via may be a conformal via.

[0008] In one embodiment, the conductive material extending along the sidewalls of the piezoelectric layer is connected to the conductive layer and the ground structure. included in the electrical path between

[0009] In one embodiment, the ground structure includes a plurality of ground structure portions spaced apart from one another.

[0010] In one embodiment, the acoustic wave device further comprises an interdigital transducer. A temperature compensating layer is disposed over the electrode.

[0011] In one embodiment, the acoustic wave device further comprises a component disposed between the piezoelectric layer and the conductive layer. The dispersion control layer may include silicon dioxide.

[0012] In one embodiment, the conductive layer comprises aluminum.

[0013] In one embodiment, the conductive layer has a thickness of approximately 10 nanometers to approximately 10 microns. The thickness is between .

[0014] In one embodiment, the ground structure includes a conductive plate.

[0015] In one embodiment, the ground structure comprises a conductive pillar.

[0016] In one aspect, an acoustic wave filter is disclosed. The acoustic wave filter includes an acoustic wave device. The acoustic wave device is a piezoelectric layer on a substrate and an interdigital transducer on the piezoelectric layer. a transducer electrode, a ground structure on the piezoelectric layer, and a structure disposed between the piezoelectric layer and the substrate. The conductive layer is electrically connected to a ground structure. The acoustic wave device and the plurality of other acoustic wave devices are , arranged together to filter radio frequency signals.

[0017] In one aspect, a method of manufacturing an acoustic wave device is disclosed. The method includes: A conductive layer on the substrate, a piezoelectric layer on the conductive layer, and an interdigital layer on the piezoelectric layer. providing an acoustic wave device structure including a conductive transducer electrode; The layer is disposed between the substrate and the piezoelectric layer. The method also includes disposing a conductive layer on the piezoelectric layer. This also includes grounding the conductive layer by electrically connecting it to a ground structure.

[0018] In one embodiment, the method further comprises removing at least a portion of the piezoelectric layer to expose the conductive layer. forming an opening through the component and providing a conductive material in the opening. Connecting refers to electrically connecting the conductive layer to the ground structure via a conductive material. The conductive material in the opening can be a filled via or a conformal via.

[0019] In one embodiment, the method further comprises etching a portion of the piezoelectric layer and and providing a conductive material to the etched portion of the substrate. This may result in electrically connecting the layer to a ground structure via a conductive material.

[0020] In one embodiment, the method further comprises: forming a temperature compensating layer.

[0021] In one embodiment, the providing step includes providing an acoustic wave device structure with a piezoelectric layer and a conductive layer. The method includes providing a dispersion adjustment layer disposed on the substrate.

[0022] In one aspect, an acoustic wave device is disclosed, the acoustic wave device comprising a piezoelectric layer on a substrate. an interdigital transducer electrode on the piezoelectric layer; and a piezoelectric layer and a substrate. The acoustic wave device also includes a conductive layer disposed below the substrate. The substrate is disposed between the conductive layer and the ground structure. It is electrically connected to a ground structure.

[0023] In one embodiment, a via extending through at least a portion of the substrate connects the conductive layer and the ground structure. The via may be a filled via. The via may be a conformal via. It can be used as a via.

[0024] In one embodiment, a conductive material extending along the sidewall of the substrate provides a connection between the conductive layer and the ground structure. It is included in the electrical path between

[0025] In one embodiment, the ground structure includes a plurality of ground structure portions spaced apart from one another.

[0026] In one embodiment, the acoustic wave device further comprises an interdigital transducer. A temperature compensating layer is disposed over the electrode.

[0027] In one embodiment, the acoustic wave device further comprises an insulating layer disposed between the piezoelectric layer and the conductive layer. Includes the edge layer.

[0028] In one embodiment, the interdigital transducer electrodes are electrically connected to a ground structure. are connected to the network.

[0029] In one embodiment, the conductive layer has a thickness of approximately 10 nanometers to approximately 10 microns. The thickness is between .

[0030] In one embodiment, a first via extends from the ground structure to the conductive structure and a second via extends from the ground structure to the conductive structure. It extends through the conductive layer from the ground structure to the interdigital transducer electrodes.

[0031] In one embodiment, the acoustic wave device is arranged to generate a surface acoustic wave.

[0032] In one aspect, an acoustic wave filter is disclosed. The acoustic wave filter includes an acoustic wave device. The acoustic wave device is a piezoelectric layer on a substrate and an interdigital transducer on the piezoelectric layer. a transducer electrode, a conductive layer disposed between the piezoelectric layer and the substrate, and a conductive layer disposed under the substrate. and a ground structure disposed on the conductive layer, the substrate being disposed between the conductive layer and the ground structure. The conductive layer is electrically connected to a ground structure. The acoustic wave filter also includes a plurality of other Acoustic wave devices and other acoustic wave devices are also included. are sequenced together to filter the signal.

[0033] In one aspect, a method for fabricating an acoustic wave device is disclosed. The method includes: A conductive layer on the substrate, a piezoelectric layer on the conductive layer, and an insulator disposed on the piezoelectric layer. and providing an acoustic wave device structure including a terdigital transducer electrode. The conductive layer is disposed between the substrate and the piezoelectric layer. The method also includes disposing the conductive layer under the substrate. The substrate is disposed between the conductive layer and the ground structure. will be done.

[0034] In one embodiment, the method further comprises forming an opening through at least a portion of the substrate. and providing a conductive material in the opening. This causes an electrical connection to the earth structure via the conductive material. A via may be formed through the

[0035] In one embodiment, the method further comprises: forming a temperature compensating layer.

[0036] In one embodiment, the providing step includes providing an acoustic wave device structure with a piezoelectric layer and a conductive layer. The method includes providing a dispersion adjustment layer disposed on the substrate.

[0037] In one embodiment, the electrically connecting also includes interdigital connection with the ground structure. The transducer electrodes are electrically connected.

[0038] In one embodiment, after electrically connecting, the first via extends from the ground structure to the conductive structure. a second via extends through the conductive layer from the ground structure to the interdigital transformer; It extends to the transducer electrode.

[0039] In another aspect, an acoustic wave resonator includes a piezoelectric layer on a substrate and an interdigital transducer on the piezoelectric layer. an interdigital transducer electrode and a The piezoelectric element includes a ground structure and a conductive layer disposed between the piezoelectric layer and the substrate. Both are electrically connected to a ground structure via vias that extend through the piezoelectric layer.

[0040] The acoustic wave resonator may be a surface acoustic wave resonator configured to generate surface acoustic waves.

[0041] The acoustic wave resonator further comprises a component disposed on the interdigital transducer electrode. Alternatively or additionally, the acoustic wave resonator may be disposed between the piezoelectric layer and the conductive layer. The dispersion adjustment layer may include silicon dioxide.

[0042] The conductive layer may have a thickness between approximately 10 nanometers and approximately 10 microns. The conductive layer may include aluminum.

[0043] The substrate may be a high speed substrate. The ground structure may include a copper plate. It may include.

[0044] The acoustic wave resonator may further include a solder pad on the ground structure.

[0045] An acoustic wave filter may include an acoustic wave resonator, including any of the acoustic wave resonators disclosed herein. Acoustic wave filters are capable of filtering radio frequency signals.

[0046] A wireless communication device includes an antenna and an acoustic wave filter as disclosed herein in communication with the antenna. The data may include either

[0047] In another aspect, a method for fabricating an acoustic wave resonator is disclosed. forming an opening through at least the piezoelectric layer to expose the conductive layer; The conductive layer is included in a multilayer piezoelectric substrate of the acoustic wave resonator, and the opening is filled with a conductive material. and forming a via through the piezoelectric layer and connecting the conductive layer to a ground structure through the via. and electrically connecting the ground structure to the piezoelectric layer and the acoustic wave resonator. and an interdigital transducer electrode of the device, A transducer electrode is disposed on the piezoelectric layer.

[0048] The method may further include a dispersion adjustment layer over the interdigital transducer electrodes. Alternatively or additionally, the method may include forming a dispersion adjustment layer between the piezoelectric layer and the conductive layer. The dispersion adjustment layer may include silicon dioxide. The acoustic wave resonator generates a surface acoustic wave. The surface acoustic wave resonator may be configured as follows.

[0049] In another aspect, an acoustic wave resonator includes a piezoelectric layer on a substrate and an interdigital transducer on the piezoelectric layer. an interdigital transducer electrode and a The piezoelectric layer includes a ground structure and a conductive layer disposed between the piezoelectric layer and the substrate. The resonator has an etched portion on the opposite side thereof. The conductive layer is in contact with the etched portion of the piezoelectric layer. The electrical connection is made to the ground structure via the conductive material in the

[0050] The acoustic wave resonator may be a surface acoustic wave resonator configured to generate surface acoustic waves. The acoustic wave resonator further comprises a distributed transducer disposed above the interdigital transducer electrodes. Alternatively or additionally, the acoustic wave resonator may further include an adjustment layer between the piezoelectric layer and the conductive layer. The dispersion adjustment layer may be disposed on the substrate.

[0051] In another aspect, a method for fabricating an acoustic wave resonator is disclosed. Etching portions of the piezoelectric layer and filling the etched portions with a conductive material. and electrically connecting the conductive material to a ground structure, the piezoelectric layer being disposed on the conductive layer. the piezoelectric layer and the conductive layer are included in a multilayer piezoelectric substrate of the acoustic wave resonator, and the connection The earth structure includes the piezoelectric layer and the interdigital transducer electrodes of the acoustic wave resonator. and the interdigital transducer electrodes are disposed on the piezoelectric layer. To be placed.

[0052] Etching portions of the piezoelectric layer includes etching back portions of the piezoelectric layer. The acoustic wave resonator can be seen as a surface acoustic wave resonator configured to generate a surface acoustic wave. good.

[0053] The method further comprises etching a corresponding portion of the dispersion adjustment layer disposed between the piezoelectric layer and the conductive layer. and filling the corresponding etched portions of the dispersion adjustment layer with a conductive material. It can be seen.

[0054] The method further comprises forming a second dispersion adjustment layer over the interdigital transducer electrodes. a conductive material for etching a corresponding etched portion of the second dispersion adjustment layer; and filling the same with

[0055] For purposes of summarizing this disclosure, certain aspects, advantages and novel features of the innovation are set forth herein. It will be understood that not all such advantages may be realized in any one This is not achieved in any particular embodiment of the present invention. , one advantage or group of advantages taught herein, or other advantages taught or suggested herein. It may be embodied or performed in a manner that achieves or optimizes, but does not necessarily achieve, Cut. [Brief explanation of the drawings]

[0056] Embodiments of the present disclosure will now be described by way of non-limiting example with reference to the accompanying drawings.

[0057] [Figure 1] FIG. 2 is a cross-sectional view of a portion of a surface acoustic wave resonator. [Figure 2] FIG. 10 is a cross-sectional view of a portion of another surface acoustic wave resonator. [Figure 3] FIG. 10 is a cross-sectional view of a portion of another surface acoustic wave resonator. [Figure 4A] FIG. 10 is a cross-sectional view of a portion of another surface acoustic wave resonator having a multilayer piezoelectric substrate according to an embodiment. [Figure 4B] FIG. 10 is a cross-sectional view of a portion of another surface acoustic wave resonator having a multilayer piezoelectric substrate according to another embodiment. [Figure 4C] FIG. 10 is a cross-sectional view of a portion of another surface acoustic wave resonator having a multilayer piezoelectric substrate according to another embodiment. [Figure 4D] FIG. 10 is a cross-sectional view of another surface acoustic wave resonator having a multilayer piezoelectric substrate according to another embodiment. [Figure 4E] FIG. 10 is a cross-sectional view of another surface acoustic wave resonator having a multilayer piezoelectric substrate according to another embodiment. [Figure 4F]10 is a cross-sectional view of a portion of a surface acoustic wave resonator having a multilayer piezoelectric substrate including conformal vias according to another embodiment. [Figure 4G] FIG. 10 is a cross-sectional view of another surface acoustic wave resonator having a multilayer piezoelectric substrate according to another embodiment. [Figure 4H] FIG. 10 is a cross-sectional view of a surface acoustic wave resonator having a multilayer piezoelectric substrate according to another embodiment. [Figure 4I] FIG. 10 is a cross-sectional view of a surface acoustic wave resonator having a multilayer piezoelectric substrate according to another embodiment. [Figure 5] 10 is a graph of receive and transmit isolation curves comparing an acoustic wave resonator without a conductive layer and an acoustic wave resonator with a conductive layer according to one embodiment. [Figure 6] FIG. 6 is a cross-sectional view of a portion of a surface acoustic wave resonator having a multilayer piezoelectric substrate showing conductive layer bonding locations according to one embodiment. [Figure 7] FIG. 7 is a graph comparing transmission characteristics of acoustic wave resonators having conductive layers at different bonding locations according to one embodiment. [Figure 8A] 1 is a cross-sectional view of a portion of a surface acoustic wave resonator having a multilayer piezoelectric substrate according to an embodiment. [Figure 8B] FIG. 10 is a cross-sectional view of a portion of another surface acoustic wave resonator having a multilayer piezoelectric substrate according to an embodiment. [Figure 8C] FIG. 10 is a cross-sectional view of a portion of another surface acoustic wave resonator having a multilayer piezoelectric substrate according to an embodiment. [Figure 9A] 1 is a flowchart illustrating a process for fabricating a surface acoustic wave resonator having a multilayer piezoelectric substrate according to one embodiment. [Figure 9B] 10 is a flowchart illustrating another process for fabricating a surface acoustic wave resonator having a multilayer piezoelectric substrate according to an embodiment. [Figure 10A] 1 is a cross-sectional view of a surface acoustic wave resonator having a multilayer piezoelectric substrate according to an embodiment of the present invention. [Figure 10B] FIG. 10 is a cross-sectional view of a surface acoustic wave resonator having a multilayer piezoelectric substrate according to another embodiment. [Figure 10C]FIG. 10 is a cross-sectional view of a surface acoustic wave resonator having a multilayer piezoelectric substrate according to another embodiment. [Figure 10D] FIG. 10 is a cross-sectional view of a surface acoustic wave resonator having a multilayer piezoelectric substrate according to another embodiment. [Figure 10E] FIG. 10 is a cross-sectional view of a surface acoustic wave resonator having a multilayer piezoelectric substrate according to another embodiment. [Figure 10F] FIG. 1 is a schematic diagram of a circuit topology including a surface acoustic wave resonator according to an embodiment. [Figure 10G] FIG. 10 is a schematic diagram of a circuit topology including a surface acoustic wave resonator according to another embodiment. [Figure 11] FIG. 1 is a schematic diagram of a transmit filter including a surface acoustic wave resonator according to an embodiment. [Figure 12] FIG. 1 is a schematic diagram of a receive filter including a surface acoustic wave resonator according to an embodiment. [Figure 13] FIG. 1 is a schematic diagram of a radio frequency module including an acoustic wave device according to an embodiment. [Figure 14] FIG. 1 is a schematic diagram of a radio frequency module including an acoustic wave component according to an embodiment. [Figure 15A] 1 is a schematic block diagram of a wireless communication device including a filter according to one or more embodiments. [Figure 15B] FIG. 1 is a schematic block diagram of another wireless communication device including a filter according to one or more embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0058] The following detailed description of certain embodiments represents various descriptions of specific embodiments. However, the innovations described herein are defined and covered, for example, by the claims. In this description, the same reference numerals refer to the same Reference is made to the drawings which may show identical or functionally similar elements. It is further understood that elements shown in the drawings are not necessarily to scale. The embodiments may include more elements than shown in the drawings and / or may include more elements than shown in the drawings. Additionally, some embodiments may include a subset of features from more than one drawing. Any suitable combination may be incorporated.

[0059] With the explosive growth of mobile communications, the frequency spectrum is becoming more congested. RF filters and duplexers with steep roll-off, low temperature drift, and low insertion loss. The resulting specifications are stringent, such as low input loss, small size, or any combination of these. Bulk Acoustic Wave (BAW) filters are thin film bulk acoustic resonator (FBAR) filters. Such BAW filters may include a quartz crystal and / or a solid-mounted resonator (SMR). can meet the stringent specifications for RF filters in certain applications. Surface acoustic wave (SAW) filters typically have a high frequency drift over temperature. Such SAW filters can encounter difficulties in meeting stringent filter specifications. However, BAW filters are generally more expensive and smaller in size than SAW filters. The gap is large.

[0060] Aspects of the present disclosure include forming a lithium tantalate (LT) or lithium niobate (LT) layer on a substrate layer. a lithium-based piezoelectric layer, such as a lithium-based niobium (LiN) layer, and a conductive layer disposed between the piezoelectric layer and a substrate layer. The present invention relates to a surface acoustic wave device having a multilayer piezoelectric substrate, wherein a conductive layer is disposed on the piezoelectric layer. In some other applications, the conductive structure may be in electrical communication with a grounded structure. The electrical layer may be in electrical communication with a ground structure disposed on the substrate layer.

[0061] Surface acoustic wave filters and / or duplexers including surface acoustic wave devices with grounded conductive layers A lexer improves receive and / or transmit isolation. For example, Parasitic capacitance between the input, output port, and any other signal pads on the piezoelectric layer can cause the Parasitic capacitances are present at input ports, output ports, and other signal pads. The piezoelectric substrate can attenuate this electrical coupling.

[0062] Acoustic wave filters are used in a variety of applications, such as in the RF front-end of mobile phones. In this application, radio frequency (RF) signals can be filtered. The filter may be implemented with a surface acoustic wave (SAW) device. W resonators, SAW delay lines, and multimode SAW (MMS) filters (e.g., double-mode Some embodiments include SAW filters (DMS filters). Although described with reference to a W resonator, any suitable principle and The advantages may be applied to any other suitable type of SAW device.

[0063] FIG. 1 is a cross-sectional view of a portion of a surface acoustic wave resonator 130. As shown, the surface acoustic wave The resonator 130 includes a piezoelectric layer 142, a ground structure 162 on the piezoelectric layer 142, and a ground structure 162 on the ground structure 162. 162. The piezoelectric layer 142 includes one or more pads 164 on top of the piezoelectric layer 142. The piezoelectric layer 142 is made of lithium niobate (LN The ground structure may be any suitable piezoelectric layer, such as a tantalum oxide (LT) layer or a lithium tantalate (LT) layer. The ground structure 162 is electrically connected to ground. The ground structure 162 provides a ground connection. The ground structure 162 may be any conductive structure arranged to provide a conductive plate and The ground structure 162 may include one or more conductive pillars and / or one or more conductive pillars. The ground structure 162 may include one or more ground pads made of copper (Cu), gold (Au), or , Lead (Pb), Aluminum (Al), Silver (Ag), Cu with adhesive, Au, Pb, A Any conductive paste, such as one or more of I and Ag conductive particles, and the like. The one or more pads 164 may comprise any suitable pad material. The illustrated pads 164 may be used to mount the surface acoustic wave resonator 130 to a module or circuit, for example. It can be used to connect to a substrate.

[0064] 2 is a cross-sectional view of a portion of a surface acoustic wave resonator 132 having a multilayer piezoelectric substrate. The surface acoustic wave resonator 132 is similar to the surface acoustic wave resonator 130 of FIG. The piezoelectric layer 142 of the resonator 132 is disposed on a carrier substrate 152 in the surface acoustic wave resonator 132. This surface acoustic wave resonator 132 is different from a multilayer piezoelectric substrate surface acoustic wave resonator. The carrier substrate 152 may be a silicon substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, or the like. The carrier substrate may be a quartz substrate, a polycrystalline spinel substrate, or any other suitable carrier substrate. The substrate 152 may be referred to as a support substrate, a carrier wafer, or a support wafer.

[0065] 3 is a cross-sectional view of a portion of a surface acoustic wave resonator 134 having a multi-layer piezoelectric substrate. The surface acoustic wave resonator 134 is similar to the surface acoustic wave resonator 132 in FIG. The difference is that the substrate 134 includes a conductive layer 157. The conductive layer 157 shown is a carrier substrate. 3 is placed between the conductive layer 152 and the piezoelectric layer 142. The conductive layer 157 in FIG. The conductive layer 157 in 3 is not electrically connected to the ground structure 162. , aluminum layer, titanium layer, iron layer, copper layer, other standard materials used for conductive traces , or any other suitable conductive layer.

[0066] FIG. 4A illustrates a portion of a surface acoustic wave resonator 136 having a multilayer piezoelectric substrate according to one embodiment. This surface acoustic wave resonator 136 is called a multilayer piezoelectric substrate surface acoustic wave resonator. The surface acoustic wave resonator 136 is similar to the surface acoustic wave resonator 132 of FIG. The difference is that the conductive layer 158 is electrically connected to a ground structure 162. 8 is configured to be grounded. The conductive layer 158 shown is a As shown, the conductive layer 158 is disposed between the piezoelectric layer 142 and the conductive layer 158. The conductive layer 158 is electrically connected to ground by the wrapped portion 143 of conductive material. 3. It is electrically connected to the earth structure 162. Therefore, unlike the floating conductive layer 157 of FIG. , the conductive layer 158 may be grounded as shown. The sidewall includes a conductive material extending along at least a portion of the sidewall, the sidewall being in contact with the conductive layer 158. The conductive layer 158 may be an aluminum layer or any other suitable conductive material. The conductive layer 158 may be approximately 1 micron thick, approximately 1 micron thick, or any other suitable conductive layer. Thickness between 0.5 microns and approximately 2 microns, approximately 10 nanometers and Typically, the thickness may be between 10 microns or greater than 10 microns.

[0067] One winding 143 is shown to the left of the surface acoustic wave resonator 136 in FIG. 4A. However, in some other embodiments, the surface acoustic wave resonator 136 is For example, the surface acoustic wave resonator 136 may include one or more windings. The surface acoustic wave resonator 136 may include winding portions 143 on the left and right sides thereof. In an embodiment, there may be an additional ground connection for a stronger ground connection.

[0068] FIG. 4C illustrates a portion of a surface acoustic wave resonator 137 having a multilayer piezoelectric substrate according to one embodiment. The multilayer piezoelectric substrate of the surface acoustic wave resonator 137 may be any suitable substrate disclosed herein. As shown, the surface acoustic wave (SAW) may include a conductive layer 158 implemented in accordance with the principles and advantages of the present invention. The resonator 137 includes a piezoelectric layer 142 on a carrier substrate 152. A conductive layer 158 is The interdigital transducer is disposed between the rear substrate 152 and the piezoelectric layer 142. An IDT electrode 144 is disposed on the piezoelectric layer 142. The IDT electrodes 144 may be in physical contact with the piezoelectric layer 142 as follows: IDT electrodes 144 may include, in some examples, Such an IDT electrode 144 may include two or more conductive layers. and molybdenum (Mo), tungsten (W), gold (Au), silver (Ag), copper (Cu), and other conductive layers such as platinum (Pt), ruthenium (Ru), titanium (Ti), etc. In some embodiments, the IDT electrode 144 may be a multi-layer IDT electrode.

[0069] The surface acoustic wave resonator 137 of FIG. 4B is a conductive layer 158 and a surface acoustic wave resonator 136 of FIG. 4A. One approach to providing electrical communication with a ground structure 162 is shown. In the device 137, one or more portions of the piezoelectric layer 142 are removed to expose the conductive layer 158 during fabrication. The removed portion can be filled with a conductive material 160 to form a conductive A material 160 may be disposed on the piezoelectric layer 142, such as a conductive layer 158 and a ground structure 162 (see FIG. The conductive material 160 provides electrical contact between the conductive layer 158 and a ground structure 162. That is, the conductive layer 158 may be connected to the ground structure 1 via the conductive material 160. 62.

[0070] The one or more etched portions of the piezoelectric layer 142 may be wet etched, dry etched, or the like. Any suitable etching such as etching, chemical mechanical planarization (CMP), laser drilling, etc. By etching from one or more edges of the surface acoustic wave resonator 137 using a process The conductive material 160 may be deposited by physical vapor deposition (PVD), chemical vapor deposition (CVD), or the like. Chemical vapor deposition (CVD), electrochemical vapor deposition (ECD), molecular beam epitaxy (MBE), atomic layer evaporation etch using any suitable deposition process, such as atomic layer deposition (ALD), electron beam evaporation, etc. The conductive material 160 may be molybdenum (Mo), tungsten ( W), gold (Au), silver (Ag), copper (Cu), platinum (Pt), ruthenium (Ru), titanium The conductive material may be any suitable conductive material such as titanium (Ti) or the like.

[0071] FIG. 4C shows a portion of a surface acoustic wave resonator 138 having a multilayer piezoelectric substrate according to another embodiment. The multilayer piezoelectric substrate of the surface acoustic wave resonator 138 may be any suitable substrate disclosed herein. The surface acoustic wave resonator 138 may include a conductive layer 158 implemented according to the principles and advantages of the present invention. 4B, except that FIG. 4C is different from the conductive layer 158 of FIG. 4A. 1, which differs in that it illustrates another approach to providing electrical communication with the ground structure 162.

[0072] In the surface acoustic wave resonator 138, one or more vias 166 filled with a conductive material provide a conductive The electrical connection between the conductive layer 158 and a ground structure 162 (not shown) may be disposed on the piezoelectric layer 142. Vias 166 are included in the electrical path between conductive layer 158 and ground structure 162. Although via 166 is shown as a filled via, via 166 is Any other suitable conductive structure may be used instead or in addition. Additionally, the vias 166 may implement an electrical path between the conductive layer 158 and the ground structure 162. may include through-hole vias.

[0073] The vias 166 may be formed using any suitable via formation process. For example, an opening may be formed at least through the piezoelectric layer 142 to expose the conductive layer 158 during fabrication. The opening can be formed as follows: In one aspect, the openings can be formed using any suitable etching process. The openings can be filled with a conductive material to form vias 16 through the piezoelectric layer 142. 6 to contact the conductive material of the via 166 with the conductive layer 158. In the method, the openings can be filled with a conductive material using any suitable deposition process. On one side, openings can be filled with conductive material to form vias 166 through the piezoelectric layer 142. Before filling, the sidewalls of the opening may be lined with an electrically insulating material. The conductive material may also contact a ground structure 162. The ground structure 162 may include one or more To provide electrical communication between the ground structure 162 and the conductive layer 158 through the hole 166, The conductive layer 142 may be disposed on the conductive layer 142.

[0074] The conductive material 160 may be molybdenum (Mo), tungsten (W), gold (Au), silver (Ag ), copper (Cu), platinum (Pt), ruthenium (Ru), titanium (Ti), aluminum ( It may be any suitable conductive material such as Al, etc. An example of an insulating material is silicon dioxide (S iO2), silicon oxynitride compounds (SiON), silicon nitride compounds (SiN), titanium oxide Ta (Ta2O5), aluminum oxide (Al2O3), silicon carbide (SiC), tetra Ethyl orthosilicate (TEOS), silicon on glass (SOG), polyimide, etc. be.

[0075] FIG. 4D is a cross-sectional view of a surface acoustic wave resonator 138a having a multilayer piezoelectric substrate according to another embodiment. Acoustic wave resonator 138a is generally similar to acoustic wave resonator 138 shown in FIG. 4C. 1, except that the acoustic wave resonator 138a shown includes a ground structure 162a. The object 162a is disposed on the piezoelectric layer and is in electrical communication with the conductive layer 158 through a via 166. Portions of the ground structure 162a are disposed above the IDT electrode 144. The object 162a may be a conductive sheet configured to a ground potential. Object 162a may be a copper sheet configured at ground potential.

[0076] FIG. 4E is a cross-sectional view of a surface acoustic wave resonator 138b having a multilayer piezoelectric substrate according to another embodiment. Acoustic wave resonator 138b is generally similar to acoustic wave resonator 138a shown in FIG. However, the ground structures 162b in the acoustic wave resonator 138b are grounded at intervals. The ground structure 162b is provided on the piezoelectric layer and includes a via 166. The ground structure 162b is electrically connected to the conductive layer 158 through the IDT electrode 144. The ground structure portion of the ground structure 162b is located farther from the piezoelectric layer 142 than the IDT electrode. The ground structure 162b may be disposed laterally from the pole 144. The ground structure 162b may be a conductive pillar and / or a conductive pad. The ground structure 162b may include copper in certain applications. do.

[0077] FIG. 4F illustrates an elastic substrate having a multilayer piezoelectric substrate including conformal vias 167 according to another embodiment. 1 is a cross-sectional view of a portion of a surface acoustic wave resonator, the portion of which is a conductive layer 15. 8 and piezoelectric layer 142 on conductive layer 158. Conformal via 167 may Conformal deposition along at least the sidewalls of the via holes defined by portions of the conductive layer 142. The conductive material may also include a conductive material disposed within the conductive layer 158. The conductive material may also be disposed at the bottom of the via hole. Therefore, the conductive material may be laterally distributed from the conformal via 167. It is possible to provide electrical connections to other elements on the piezoelectric layer 142, such as IDT electrodes placed on the piezoelectric layer. Conformal vias 167 may be any suitable vias in any of the embodiments disclosed herein. In some embodiments, conformal ion exchangers may be used in accordance with the principles and advantages of the present invention. The via 167 may be, for example, a conductive material 160 or a via shown in any of FIGS. 4B to 4E. 166. According to some other embodiments, Combinations of the multi-vias 167 and other types of vias may be implemented in an acoustic wave device. For example, the conductive pillars may be formed by insulating the conductive material of a conformal via disposed on a portion of the piezoelectric layer 142. may be provided and / or connected to a portion of

[0078] FIG. 4G is a cross-sectional view of a surface acoustic wave resonator 138c having a multilayer piezoelectric substrate according to another embodiment. As shown in FIGS. 4B to 4E, the surface acoustic wave resonator 138c is mounted on a carrier substrate 1. 52, a piezoelectric layer 142 on a carrier substrate 152, and a carrier substrate 152 and a piezoelectric layer 142 The surface acoustic wave resonator 138c also includes a temperature compensating layer 156 and a conductive layer 158 therebetween. , a conductive layer 156 is provided on the temperature compensating layer 156 and is conformally disposed at least along the sidewall of the piezoelectric layer 142. In some other examples, the passivation layer, the dispersion adjustment layer, the electrode layer, and the electrode layer may be formed on the surface of the conductive material 169. 1. Disposing one or more cavities or the like between temperature compensating layer 156 and conductive material 169. can be done.

[0079] The temperature compensating layer 156 may be a silicon dioxide (SiO2) layer or any other suitable temperature compensating layer. Temperature compensating layer 156 may be a layer of any other suitable material that has a positive temperature coefficient of frequency. For example, temperature compensating layer 156 may be made of titanium dioxide in certain applications. The temperature compensating layer 15 may be a silicon oxyfluoride (TeO2) layer or a silicon oxyfluoride (SiOF) layer. 6 may include any suitable combination of SiO2, TeO2 and / or SiOF. The compensation layer 156 may serve as a passivation layer in some applications. The conductive material 169 may include any suitable conductive material. Molybdenum (Mo), tungsten (W), gold (Au), silver (Ag), copper (Cu), platinum ( The metals may include Pt), ruthenium (Ru), titanium (Ti), aluminum (Al), and the like.

[0080] The conductive material 169 can act as a ground structure. In this case, the surface acoustic wave resonator 138c is mounted on the conductive material 169 by another ground structure (not shown). The conductive material 169 may include an electrical path between the conductive layer 158 and other grounded structures. Thus, the conductive layer 158 may be included in the conductive material 16 along the sidewalls of the piezoelectric layer 142. 9 to the ground structure.

[0081] FIG. 4H is a cross-sectional view of a surface acoustic wave resonator 138d having a multilayer piezoelectric substrate according to another embodiment. This surface acoustic wave resonator 138d may be called a multi-layer piezoelectric substrate surface acoustic wave resonator. As shown, the surface acoustic wave resonator 138d includes a carrier substrate 152, a piezoelectric layer 142, and a , a ground structure 162d on the piezoelectric layer 142, and an interdigital The transducer electrode 144 and the conductive layer 15 between the carrier substrate 152 and the piezoelectric layer 142 8 and one or more pads 164 on the ground structure 162d. Layer 158 is formed by wrapping a portion 143 of conductive material around piezoelectric layer 142. The conductive layer 158 is electrically connected to the land 162d, and the conductive layer 158 is electrically connected to the ground structure 162d. .

[0082] The one or more pads include a signal pad 164a for a signal connection and a ground pad 164b for a ground connection. The ground pad 164b may include a ground structure 162d. The ground structure 162d may include conductive portions 163a, 163b, and 163c. The conductive portions 163a, 163b, and 163c of the ground structure 162d are made of copper (Cu), gold ( Au), lead (Pb), aluminum (Al), silver (Ag), Cu with adhesive, Au, P b. Conductive paste of one or more of Al and Ag conductive particles, or the like; The conductive portion 163a may be thicker than the IDT electrode 144 and may include any suitable conductive material. The surface acoustic wave resonator 138d also provides physical support for the ground structure 162d. The dielectric portions 172a and 172b are provided.

[0083] FIG. 4I is a cross-sectional view of a surface acoustic wave resonator 138e having a multilayer piezoelectric substrate according to another embodiment. The surface acoustic wave resonator 138e is the same as the surface acoustic wave resonator 138d shown in FIG. 4I, except that the conductive layer 158 in FIG. 4I is connected to the ground structure 162d through a via 166. The difference is that it is connected to

[0084] FIG. 5 shows a comparison between the acoustic wave resonator without a conductive layer shown in FIGS. 1 and 2 and the acoustic wave resonator with a floating conductive layer shown in FIG. 4A. Graph of transmit and receive isolation curves. The signal isolation curve can be related to the surface acoustic wave resonator 130 of FIG. The transmission and reception isolation curves of a representative LT / Si are shown in Figure 2 for the surface acoustic wave resonator 1. 32, and the transmit and receive isolation of the representative LT / conductive layer (floating) The typical LT / conductivity curve can be related to the surface acoustic wave resonator 134 in FIG. The transmit and receive isolation curves of the layer (connected to GND) / Si are plotted against the elastic surface in Figure 4A. The wave resonator 136 may be associated with the wave resonator 136 .

[0085] The graph shows that a floating conductive layer disposed between the carrier substrate 152 and the piezoelectric layer 142 FIG. 5 also illustrates the relationship between the carrier substrate 152 and the piezoelectric layer 14. 2 can improve isolation. An acoustic wave resonator having a multilayer piezoelectric substrate disposed between a layer and a carrier substrate is provided in the multilayer substrate. This shows that the electronic coupling between the two can be suppressed. Isolation may be improved.

[0086] FIG. 6 is a surface acoustic wave resonator having a multilayer piezoelectric substrate showing conductive layer bonding locations according to one embodiment. 6 is a cross-sectional view of a portion of acoustic wave resonator 600. As shown, acoustic wave resonator 600 is mounted on a carrier substrate. 606, a piezoelectric layer 602 on a carrier substrate 606, and a piezoelectric layer 602 and a carrier substrate 60 6, a silicon dioxide (SiO2) layer 604 and a conductive layer 608 disposed between the piezoelectric layer 6 The conductive layer 608 includes an IDT electrode 610 on the substrate 602. The conductive layer 608 includes a ground structure for ground connection. The carrier substrate 606 is configured to be connected to an object. substrate, quartz substrate, sapphire substrate, ceramic substrate, polycrystalline spinel substrate, or any other The silicon dioxide layer 604 may be a dispersion adjustment layer. Layer 602 may be any suitable piezoelectric layer, such as a lithium niobate layer or a lithium tantalate layer. The IDT electrodes 610 may be in physical contact with the piezoelectric layer 602 as shown. The IDT electrodes 610 may be made of aluminum (Al), any suitable alloy of aluminum, molybdenum, or the like. Mo, Tungsten (W), Gold (Au), Silver (Ag), Copper (Cu), Platinum (Pt ), ruthenium (Ru), titanium (Ti), etc.

[0087] FIG. 6 shows three examples of contact points for the conductive layer 608. On the other hand, other contact points In the first example, the conductive layer 608 is connected to the conductive layer 608A. 602 and is disposed between the piezoelectric layer 602 and the silicon dioxide layer 604. In the figure, conductive layer 608 is represented by conductive layer 608B, which is embedded in silicon dioxide layer 604. In the third example, the conductive layer 608 is represented by conductive layer 608C. , disposed between a silicon dioxide layer 604 and a carrier substrate 606 .

[0088] FIG. 7 shows an acoustic wave coherent waveguide having conductive layers 608 at different bonding locations A, B, and C shown in FIG. 7 is a graph comparing the transmission characteristics of the resonator 600. FIG. The transmission characteristics of an elastic wave resonator having a piezoelectric substrate are determined by multi-layer structure including a conductive layer at the bonding position B or C. This shows that the resonator is inferior to an acoustic wave resonator with a multi-layer piezoelectric substrate. The anti-resonance of the elastic wave resonator having the multilayer piezoelectric substrate including the conductive layer at the bonding position A is The resonator is deteriorated compared to the acoustic wave resonator having the multilayer piezoelectric substrate included in the alignment position B or C.

[0089] FIG. 7 further illustrates an elastic substrate having a multilayer piezoelectric substrate including a silicon dioxide layer and a conductive layer at bonding location C. The piezoelectric resonator has a multilayer piezoelectric substrate including a silicon dioxide layer and a conductive layer at bonding position A or B. It shows that the resonator has better transmission characteristics than the conventional elastic wave resonator. As a result, the conductive layer 608A is in direct contact with the piezoelectric layer 602, which degrades the electrical performance of the IDT electrode 610. Since the dielectric constant of the silicon dioxide layer is smaller than the dielectric constant of the piezoelectric layer 602, The insulation provided by layer 604 may help improve the electrical properties of the IDT electrode 610. Therefore, in some embodiments, the conductive layer is placed between the conductive layer and the piezoelectric layer 602 to a sufficient thickness. It is preferable to arrange the insulating layer (e.g., silicon dioxide layer 604) having a thickness of 1000 . obtain.

[0090] Conductive layers electrically connected to the ground structure are used to fabricate a variety of different multilayer piezoelectric substrate acoustic wave devices. Examples of such acoustic wave devices can be seen in Figures 8A-8C. Each of these acoustic wave device examples is described below. It may be implemented with any suitable electrical connection to a ground structure. All of these acoustic wave device examples are connected to a ground structure located below the carrier substrate. Any suitable electrical connection may be implemented.

[0091] FIG. 8A shows a portion of a surface acoustic wave resonator 153 having a multilayer piezoelectric substrate according to one embodiment. The surface acoustic wave resonator 153 may be configured to utilize any suitable principles and advantages disclosed herein. As shown, the surface acoustic wave resonator 153 may include a multi-layer piezoelectric substrate according to A plate 152, a conductive layer 158 on the carrier substrate 152, and a dispersion adjustment layer 15 on the conductive layer. 4, the piezoelectric layer 142 on the dispersion adjustment layer 154, and the IDT electrode 144 on the piezoelectric layer 142. Includes:

[0092] The carrier substrate 152 may be a silicon substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, It may be a polycrystalline spinel substrate, or any other suitable carrier substrate. The conductive layer 158 is disposed between the dispersion adjustment layer 154 and the carrier substrate 152. Aluminum (Al) layer, any suitable aluminum (Al) alloy layer, molybdenum (Mo) layer, tungsten (W) layer, gold (Au) layer, silver (Ag) layer, copper (Cu) layer, platinum (Pt) layer layer, a ruthenium (Ru) layer, a titanium (Ti) layer, or any other suitable conductive layer. The conductive layer 158 may, in some instances, include two or more conductive layers.

[0093] The illustrated dispersion adjustment layer 154 is disposed between the conductive layer 158 and the piezoelectric layer 142. The conditioning layer 154 may alternatively or additionally comprise any suitable insulating layer, temperature compensating layer, dielectric layer and / or The dispersion adjustment layer 154 may include a silicon nitride layer, a silicon dioxide layer, or any The piezoelectric layer 142 may be a lithium niobate (LN) layer or other suitable dispersion adjustment layer. It may be any suitable piezoelectric layer, such as a lithium tantalate (LT) layer. IDT electrode 14 4 may be in physical contact with the piezoelectric layer 142 as shown. The IDT electrodes 144 may be made of aluminum. The IDT electrodes 144 may include aluminum (Al), or any suitable alloy thereof. In some examples, the IDT electrode 144 may include two or more conductive layers. Aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), silver (Ag), copper (Cu), platinum (Pt), ruthenium (Ru), titanium (Ti), etc. may include:

[0094] The conductive layer 158 is a ground plane disposed on the piezoelectric layer 142 in the surface acoustic wave resonator 153. Alternatively or additionally, the conductive layer 158 may be in electrical communication with the carrier substrate 15 The conductive layer 158 may be in electrical communication with a ground structure disposed below the conductive layer 158. In one aspect, the dispersion adjustment layer 154 and the piezoelectric layer 142 may be referred to as a surface acoustic wave resonator. The surface of the cavity 153 may be etched away or etched back at one or more edges. The portions removed or etched back by etching are filled with a conductive material. , the conductive material is in electrical communication with the ground structure and the conductive layer 158. At least one via is provided between the piezoelectric layer 142 of the surface acoustic wave resonator 153 and the dispersion adjustment layer 154 The conductive material filling the vias is formed between the ground structure and the conductive layer 158. Provide electrical communication between them.

[0095] FIG. 8B shows a portion of a surface acoustic wave resonator 155 having a multilayer piezoelectric substrate according to another embodiment. The surface acoustic wave resonator 155 may be configured to utilize any suitable principles and advantages disclosed herein. The surface acoustic wave resonator 155 may include a multilayer piezoelectric substrate according to the surface acoustic wave resonator of FIG. It is similar to 153, but differs in that the dispersion adjustment layer 154 is not included in the multilayer piezoelectric substrate. Instead, a temperature compensating layer 156 is included in the surface acoustic wave device 155. The temperature compensating layer 156 is disposed on top of the IDT electrode 144. The temperature compensating layer 156 may be a silicon dioxide layer or Temperature-compensating layer 156 may be any other suitable temperature-compensating layer. In some applications, the temperature-compensating layer 156 may serve as a passivation layer. The temperature coefficient of frequency (TCF) of the surface acoustic wave resonator 155 can be brought close to zero. For example, piezoelectric layer 142 may have a negative TCF and temperature-compensating layer 156 may have a positive TCF. Temperature compensating layer 156 may have an opposite TCF to piezoelectric layer 142.

[0096] The conductive layer 158 is a ground plane disposed on the piezoelectric layer 142 in the surface acoustic wave resonator 155. Alternatively or additionally, the conductive layer 158 may be in electrical communication with the carrier substrate 15 In one aspect, the at least one pressure The conductive layer 142 is etched away at one or more edges of the surface acoustic wave resonator 155. The part removed or etched back by etching The portion is filled with a conductive material that electrically connects the ground structure and the conductive layer 158. In another aspect, at least one via is connected to at least one surface acoustic wave resonator 1. 55 through the piezoelectric layer 142, and the conductive material filling the vias is and conductive layer 158. In some examples, temperature compensating layer 156 can be an intervening layer between the conductive layer 142 and the ground structure. In such a case, Corresponding portions of the compensation layer 156 are etched and filled with a conductive material, or at least one Vias may be formed through temperature compensating layer 156 and piezoelectric layer 142 .

[0097] FIG. 8C shows a portion of a surface acoustic wave resonator 159 having a multilayer piezoelectric substrate according to another embodiment. The surface acoustic wave resonator 159 is similar to the surface acoustic wave resonator 153 in FIG. However, the difference is that the temperature compensating layer 156 is included in the surface acoustic wave resonator 159. The oscillator 159 may include a multi-layer piezoelectric substrate according to any suitable principles and advantages disclosed herein. In some examples, the dispersion adjustment layer 154 and the temperature compensation layer 156 can be the same material. The dispersion adjustment layer 154 and the temperature compensation layer 156 can be different materials in certain instances.

[0098] The conductive layer 158 is a ground plane disposed above the piezoelectric layer 142 in the surface acoustic wave resonator 159. Alternatively or additionally, the conductive layer 158 may be in electrical communication with the carrier substrate 15 In one aspect, the temperature compensating layer 1 may be in electrical communication with a ground structure disposed below the temperature compensating layer 1. 56, the piezoelectric layer 142 and the dispersion adjustment layer 154 are connected to one or more edges of the surface acoustic wave resonator 159. It can be etched away or etched back at the The etched back portion is filled with a conductive material, which forms a ground structure and On the other side, at least one via is in electrical communication with the conductive layer 158. The temperature compensation layer 156 of the wave resonator 159, the piezoelectric layer 142, and the dispersion adjustment layer 154 are formed so as to pass through the The conductive material filling the vias provides electrical communication between the ground structure and the conductive layer 158. Give.

[0099] The acoustic wave device can be fabricated in a variety of ways. A method of manufacturing a device includes providing an acoustic wave device structure. a plate, a conductive layer on the substrate, a piezoelectric layer on the conductive layer, and an interlayer on the piezoelectric layer. and a digital transducer electrode, the conductive layer being disposed between the substrate and the piezoelectric layer. The method also includes electrically connecting the conductive layer to a ground structure disposed above the piezoelectric layer. This also includes grounding the conductive layer by doing so.

[0100] A method for fabricating an acoustic wave device includes removing at least a portion of a piezoelectric layer to expose a conductive layer. and providing a conductive material in the opening. In the embodiment, providing the conductive material may include forming a conductive material layer. The conductive material in the openings may provide an electrical connection between the conductive layer and a ground structure. , the conductive material in the opening may define a filled via or a conformal via.

[0101] In certain embodiments, a method of fabricating an acoustic wave device includes etching a portion of a piezoelectric layer. and applying a conductive material to the etched portion of the piezoelectric layer. The conductive material in the etched portion provides an electrical connection between the conductive layer and the ground structure. Can be given.

[0102] In some embodiments, the method further comprises: The method may include forming a temperature compensating layer on the substrate.

[0103] The acoustic wave device structure may also comprise a piezoelectric layer and a conductive layer in a given application. It may include a dispersion adjustment layer disposed therebetween.

[0104] Any suitable principles and advantages disclosed herein may be used in the manufacture of Lamb wave resonators or boundary acoustic wave resonators. It can be implemented in any other type of acoustic wave resonator and / or acoustic wave device such as The Lamb wave resonator has an IDT electrode on the piezoelectric layer and a piezoelectric element on the opposite side of the IDT electrode. and a reflective grating disposed on the optical waveguide. The reflective grating is formed by an IDT electrode. The induced acoustic waves are reflected to form a resonant cavity within the resonator. The Lamb wave resonator may include a periodic pattern of metal on the piezoelectric layer. This includes multi-layer piezoelectric substrate acoustic wave resonators according to any suitable principles and advantages disclosed.

[0105] 9A and 9B illustrate a method for fabricating an acoustic wave resonator with a multilayer piezoelectric substrate according to certain embodiments. 1 is a flowchart showing a process for forming an acoustic wave resonator. a piezoelectric layer on a carrier substrate, a conductive layer between the piezoelectric layer and the carrier substrate, and a conductive layer on the piezoelectric layer. configured to provide electrical connection to an IDT electrode and a ground disposed above the piezoelectric layer; In some aspects, the acoustic wave resonator may further include a piezoelectric layer and a ground structure. The dispersion adjustment layer may include a dispersion adjustment layer disposed between the carrier substrate and the IDT electrode. In some aspects, the acoustic wave resonator may further include two dispersion adjustment layers. Here, the first dispersion adjustment electrode is disposed between the piezoelectric layer and the carrier substrate, and the second dispersion adjustment layer is In some aspects, the acoustic wave resonator is disposed on the DT electrode. It may be any of 36, 153, 155 and 159.

[0106] FIG. 9A shows the removal of portions of the layers between the conductive layer and the ground structure to expose the conductive layer. For example, the acoustic wave resonator 137 in FIG. 4B and the acoustic wave resonator 137 in FIG. 4A are shown. At 136, the removed portions are filled with a conductive material as shown.

[0107] In step 902, at least a portion of the piezoelectric layer is removed to expose the conductive layer. At the surface, the corresponding portion of any intervening layer between the conductive layer and the ground structure also exposes the conductive layer. Any suitable etching process may be used to remove portions of the layer. It is possible.

[0108] In step 904, the etched portion is filled with a conductive material, and the conductive material is Any suitable deposition process may be used to electrically connect the etched portion to the conductive layer. In one aspect, the filler portion is in contact with the piezoelectric layer. Extends to earth structures.

[0109] In step 906, a ground structure is electrically connected to the filled conductive material, forming a conductive layer. is electrically connected to the ground structure through the filled conductive material.

[0110] FIG. 9B illustrates a process for fabricating one or more vias between a conductive layer and a ground structure. As shown in acoustic wave resonator 138 of FIG. 4C, one or more vias are filled with conductive material. It is filled.

[0111] At step 912, a via is formed through at least the piezoelectric layer to expose the conductive layer. In one aspect, the vias extend from the conductive layer through any intervening layers between the conductive layer and the ground structure. For example, the conductive layer may be exposed through the piezoelectric layer and any intervening layers. Any suitable etching process can be used to form the openings. This can be done.

[0112] In step 914, the opening is filled with a conductive material, which electrically connects the conductive layer. Any suitable deposition process may be used to deposit the conductive material in the opening. In one aspect, the vias extend above the piezoelectric layer of the ground structure.

[0113] In step 916, the ground structure is electrically connected to the conductive material of the via, and the conductive layer is Electrical connection is made to the ground structure through the via.

[0114] While certain embodiments associate the acoustic wave device with a ground structure above the piezoelectric layer, In some other embodiments, the ground structure is disposed below the carrier substrate. The structures are disposed below the carrier substrate and extend through and / or along the sidewalls of the carrier substrate. One or more vias and / or other conductive structures extending along the wall may provide a connection between the conductive layer and the ground structure. A ground structure may be provided on the opposite side of the carrier wafer to the conductive structure. An embodiment having such a configuration is described below with reference to Figures 10A and 10B.

[0115] FIG. 10A is a cross-sectional view of a surface acoustic wave resonator 170 having a multilayer piezoelectric substrate according to one embodiment. The surface acoustic wave resonator 170 is a carrier substrate 152 and a semiconductor layer on the carrier substrate 152. The piezoelectric layer 142, the IDT electrode 144 on the piezoelectric layer 142, the carrier substrate 152, and the piezoelectric layer a conductive layer 158 between the piezoelectric layer 142 and the conductive layer 158; and a dispersion adjustment layer 154 between the piezoelectric layer 142 and the conductive layer 158. The surface acoustic resonator 170 also includes a ground structure disposed below the carrier substrate 152. As shown, the ground structure 162c is connected to the conductive The ground structure 162c is located on the opposite side of the carrier substrate 152 from the layer 158. It is on the opposite side to the conductive layer 142.

[0116] The ground structure 162c is connected to the conductive layer 152 via a via 166a through the carrier substrate 152. 8. The ground structure 162c is electrically connected to the conductive layer 8 by two or more vias 166a. 158. The ground structure 162c may be electrically connected to any of the ground structures disclosed herein. For example, the ground structure 162c may have any of the following structures and functions: Alternatively, the ground structure may comprise a conductive plate.

[0117] FIG. 10B is a cross-sectional view of a surface acoustic wave resonator 171 having a multilayer piezoelectric substrate according to one embodiment. The surface acoustic wave resonator 171 is generally the same as the surface acoustic wave resonator 170 shown in FIG. The via 166b may be similar to the piezoelectric layer 142 and the dispersion adjustment layer 154, but the via 166b may also penetrate the piezoelectric layer 142 and the dispersion adjustment layer 154. The via 166a is electrically connected to the IDT electrode 144 as shown in the figure. Via 166b may provide a ground connection to IDT electrode 144. Via 166b is shown 144. This allows the IDT electrodes 144 and the ground plane to be aligned with the conductive material of the IDT electrodes 144. As shown in the figure, the surface acoustic wave resonator has a via It may include both vias 166a and vias 166b.

[0118] FIG. 10C is a cross-sectional view of a surface acoustic wave resonator 173 having a multilayer piezoelectric substrate according to one embodiment. The surface acoustic wave resonator 173 is a carrier substrate 152 and a semiconductor device on the carrier substrate 152. The piezoelectric layer 142, the IDT electrode 144 on the piezoelectric layer 142, the carrier substrate 152, and the piezoelectric layer a conductive layer 158 between the piezoelectric layer 142 and the conductive layer 158; and a dispersion adjustment layer 154 between the piezoelectric layer 142 and the conductive layer 158. The surface acoustic resonator 173 also includes a ground structure disposed below the carrier substrate 152. As shown, the ground structure 162c is connected to the conductive The ground structure 162c is located on the opposite side of the carrier substrate 152 from the layer 158. It is on the opposite side to the conductive layer 142.

[0119] The ground structure 162c is connected to the conductive layer 158 and the IDT electrode 14 via the conductive structure 174. A portion of the conductive structure 174 is electrically connected to the sidewall of the acoustic wave resonator 173. The conductive structure 174 is disposed along at least a portion of the sidewall of the acoustic wave resonator 173. The conductive structure 174 may be disposed conformably along part or all of the IDT electrode 174. In some other applications, the conductive structure 174 may provide a ground connection to one or more of the elastic reflectors.

[0120] FIG. 10D is a cross-sectional view of a surface acoustic wave resonator 175 having a multilayer piezoelectric substrate according to one embodiment. The surface acoustic wave resonator 175 is similar to the surface acoustic wave resonator 173, but A wave resonator 175 electrically connects the ground structure 162c to the conductive layer 158 and the IDT electrode 144. and a conductive structure 174 electrically connecting the ground structure 162c to the conductive layer 158. The surface acoustic wave resonator 175 differs from the surface acoustic wave resonator 170 in that it includes a conductive structure 176. The conductive structure 174 and the conductive structure 176 extend along different side walls. Many of these extend along the layers of the surface acoustic wave resonator 175 .

[0121] FIG. 10E is a cross-sectional view of a surface acoustic wave resonator 177 having a multilayer piezoelectric substrate according to one embodiment. The surface acoustic wave resonator 177 is similar to the surface acoustic wave resonator 173, but A wave resonator 175 electrically connects the ground structure 162c to the conductive layer 158 and the IDT electrode 144. The conductive structure 174 and the via 166a extending through the carrier substrate 152 are included. In the surface acoustic wave resonator 177, the conductive structure 174 extends along a single sidewall. do.

[0122] 10F and 10G show circuit topologies including surface acoustic wave resonators according to two embodiments. These circuit topologies include a series resonator 182 and a shunt resonator 18 4. At least the shunt resonator 184 is shown in FIG. The multilayer piezoelectric surface acoustic wave resonator may be any of the embodiments shown. In FIG. 10G, there is one ground connection to conductive layer 158. There are three ground connections to layer 158. As shown, the ground connections are 10F and 10G, the conductive layer 158 is connected to the shunt elastic surface. Electrically connected between the surface wave resonator 184 and ground. An inductance may exist between each ground connection and ground. The shunt inductance is shown in Figure 10F, and the three shunt inductances are shown in Figure 10G. In some embodiments, the shunt surface acoustic wave resonator shown in FIG. In comparison, the shunt surface acoustic wave resonator shown in FIG. 10G has a The rectifier may have a lower inductance associated therewith.

[0123] The acoustic wave device can be fabricated in a variety of ways. A method of manufacturing a device includes providing an acoustic wave device structure. The object includes a substrate, a conductive layer on the substrate, a piezoelectric layer on the conductive layer, and a piezoelectric layer on the piezoelectric layer. and an interdigital transducer electrode, the conductive layer being connected to the substrate and the piezoelectric layer. The method for fabricating an acoustic wave device also includes attaching the conductive layer to a ground structure below the substrate. The substrate is disposed between the conductive layer and the ground structure.

[0124] In some embodiments, the method also includes forming an opening through at least a portion of the substrate. and providing a conductive material in the opening. The conductive material in the opening may include: The conductive material in the openings may provide electrical connection between the conductive layer and the ground structure. A via may be defined therethrough.

[0125] In certain embodiments, the method for fabricating an acoustic wave device also includes interdigital It may also include forming a temperature compensating layer over the transducer electrodes.

[0126] In some embodiments, the acoustic wave device structure is disposed between the piezoelectric layer and the conductive layer. The dispersion adjustment layer may be formed on the surface of the semiconductor substrate.

[0127] In certain embodiments, the ground structure and the interdigital transducer electrodes , can be electrically connected by electrically connecting. After electrically connecting, a first via extends from the ground structure to the conductive structure. A second via passes through the conductive layer from the ground structure to the interdigital transducer electrode. Thus, the electrical connection provides a ground connection to the conductive structure. It is possible.

[0128] Acoustic wave devices including any suitable combination of features disclosed herein may be used in a frequency range Radio frequency signals in the fifth-generation (5G) New Radio (NR) operating band within 1 (FR1) In the 5G NR operating band, The filter arranged to filter the radio frequency signal is one of the filters disclosed herein. According to the current 5G NR specification, FR1 may include, for example, The frequency range can be from 410MHz to 7.125GHz. A grounded conductive layer is attached to the multilayer piezoelectric substrate. The acoustic wave device has an isolation layer between ports of the acoustic wave device. Such improved isolation can be a key factor in 5G NR adoption. This may be desirable for some applications.

[0129] One or more SAW devices according to any suitable principles and advantages disclosed herein may be used in 4G Filter arranged to filter radio frequency signals in the LTE operating band One or more SAW resonances according to any suitable principles and advantages disclosed herein. The device is a filter with a passband that includes the 4G LTE operating band and the 5G NR operating band. The filter may be included in a filter arranged to filter radio frequency signals in the do.

[0130] FIG. 11 is a schematic diagram of an example of a transmit filter 180 including an acoustic wave resonator according to one embodiment. The transmit filter 180 may be a bandpass filter. The illustrated transmit filter 180 filters the radio frequency signal received at the transmit port TX, The transmit filter 180 is arranged to provide a filtered output signal to the antenna port ANT. are series SAW resonators TS1, TS2, TS3, TS4, TS5, TS6 and TS7, ant SAW resonators TP1, TP2, TP3, TP4 and TP5, series input inductor L 1, and a shunt inductor L2. 1 through TP5, and / or any of the multilayer structures according to any suitable principles and advantages disclosed herein. The acoustic wave resonators TS1 to TS7 and / or TP1 to TP may be piezoelectric substrate acoustic wave resonators. 5, in accordance with any suitable principles and advantages disclosed herein. Any suitable number of series acoustic wave resonators and shunt acoustic wave resonators may be used in the transmitter. Such an acoustic wave resonator may be included in filter 180. The present invention provides a surface acoustic wave resonator having a multilayer piezoelectric substrate including a dispersion adjustment layer according to the principles and advantages of the present invention. stomach.

[0131] FIG. 12 is a schematic diagram of a receive filter 190 including an acoustic wave resonator according to one embodiment. The receive filter 190 may be a bandpass filter. The illustrated receive filter 190 is The radio frequency signal received at the antenna port ANT is filtered and filtered. The receive filter 180 is arranged to provide a filtered output signal at a receive port RX. Series SAW resonators RS1, RS2, RS3, RS4, RS5, RS6, RS7 and RS8 , shunt SAW resonators RP1, RP2, RP3, RP4 and RP5, and RP6, shunt The resonators RS1 to RS2 include a first inductor L1, a second inductor L2, and a second inductor L3. 8 and / or some or all of RP1-RP6 according to any suitable principle and method disclosed herein. The multilayer piezoelectric substrate acoustic wave resonator may be configured according to the advantages of the present invention. Some or all of P1-RP6 may be implemented using a spring in accordance with any suitable principles and advantages disclosed herein. Any suitable number of series acoustic wave resonators and shunt acoustic wave resonators may be used. Such an acoustic wave resonator may be included in the receive filter 190. Surface acoustic wave resonance with a multilayer piezoelectric substrate including a dispersion adjustment layer according to any suitable principles and advantages It is good as a container.

[0132] FIG. 13 illustrates a radio frequency module including an acoustic wave component 202 according to one embodiment. 2 is a schematic diagram of an exemplary radio frequency module 200. The exemplary radio frequency module 200 includes an acoustic wave component. The acoustic wave component 202 includes an acoustic wave amplifier 204 and other circuits 203. The acoustic wave component 202 includes an acoustic wave amplifier 204 and other circuits 203. One or more multilayer piezoelectric substrate acoustic wave resonators having any suitable combination of acoustic wave resonator characteristics. The acoustic wave component 202 may include an acoustic wave die that includes an acoustic wave resonator. For example, the acoustic wave component 202 may include a SAW die that includes a SAW resonator. .

[0133] The acoustic wave component 202 shown in FIG. 13 includes a filter 204, a terminal 205A, and a The filter 204 includes a plurality of acoustic wave resonators. One or more of the present invention may be implemented according to any suitable principles and advantages of the multilayer piezoelectric substrate acoustic wave resonators disclosed herein. The terminals 205A and 205B can be implemented as, for example, an input contact and an output contact. The acoustic wave component 202 and other circuitry 203 can act as a point. 3, they are on a common package substrate 206. The package substrate 206 is a laminated substrate. Terminals 205A and 205B may be connected to electrical connectors 208A and 208B, respectively. are electrically connected to contacts 207A and 207B on package substrate 206 via The electrical connectors 208A and 208B may be, for example, bumps or wire bonds. stomach.

[0134] Other circuitry 203 may include any suitable additional circuitry. For example, other circuitry may include one or more a power amplifier, one or more radio frequency switches, one or more additional filters, one or more low noise a sound amplifier, one or more RF couplers, one or more delay lines, one or more phase shifters, etc., or The radio frequency module 200 may include, for example, To protect the line frequency module 200 and / or facilitate its easy handling, one or more power modules may be installed. Such a package structure may include a package substrate 200. The overmolded structure may include an overmolded structure formed to Some or all of the components of the line frequency module 200 may be encapsulated.

[0135] FIG. 14 illustrates a radio frequency module 210 including acoustic wave components according to one embodiment. As shown, the radio frequency module 210 has a corresponding transmit filter. a complex including receiving filters 213A1 to 213N1 and corresponding receiving filters 213A2 to 213N2; a number of duplexers 212A to 212N, a power amplifier 214, a selection switch 215, and an antenna switch 216. The radio frequency module 210 encapsulates the elements shown. The illustrated elements may be disposed on a common package substrate 206. The package substrate 206 may be, for example, a laminate substrate. The radio frequency module may be referred to as a power amplifier module. 4 may include a subset of the elements illustrated and / or additional elements.

[0136] Each of the duplexers 212A-212N is connected to two acoustic waves coupled to a common node. The two acoustic wave filters may be used as a transmit filter and a receive filter. As shown, the transmit filter and receive filter each filter out the radio frequency signal. The transmit filters 213A1 to 213A2 may include bandpass filters arranged to filter the transmit signal. 213N1 may be one or more of the following in accordance with any suitable principles and advantages disclosed herein: Similarly, the receiving filters 213A2 to 213N2 may include a multilayer piezoelectric substrate acoustic wave resonator. one or more multilayer piezoelectric substrates, one or more of which conform to any suitable principles and advantages disclosed herein; Although FIG. 14 illustrates a duplexer, the present disclosure may include an acoustic wave resonator. Any suitable principles and advantages of the present invention may be applied to other multiplexers (e.g., quadplexers, hexaplexers, etc.). The present invention can be implemented in a multi-layered multi-phase (multiplexer, octaplexer, etc.) and / or a switchplexer. .

[0137] The power amplifier 214 can amplify the radio frequency signal. is a multi-throw radio frequency switch. Switch 215 connects the output of power amplifier 214 to the transmit The filter 213A1 to 213N1 can be electrically coupled to a selected transmit filter. In some examples, the switch 215 may switch the output of the power amplifier 214 to the transmit filter. The antenna switch can be electrically connected to two or more of the antennas 213A1 to 213N1. The switch 216 transmits the signal from one or more of the duplexers 212A to 212N to an antenna port. The duplexers 212A to 212N can be selectively coupled to the ANT. Frequency bands and / or different operating modes (e.g., different power modes, different signal modes, etc.) can be associated with.

[0138] FIG. 15A illustrates a filter 22 in a radio frequency front end 222 according to one embodiment. 2 is a schematic diagram of a wireless communication device 220 including a filter 223. The present invention may include one or more multi-layer piezoelectric substrate acoustic wave resonators according to any suitable principles and advantages. The wireless communication device 220 may be any suitable wireless communication device. The communication device 220 may be a mobile phone such as a smartphone. The wired communication device 220 includes an antenna 221, an RF front end 222, a transceiver 224, and , a processor 225, a memory 226 and a user interface 227. 21 can transmit an RF signal provided by an RF front end 222. Such RF signals may include carrier aggregation signals. Receives an RF signal and transmits the received RF signal to an RF front end 222 for processing. can be given.

[0139] The RF front end 222 includes one or more power amplifiers, one or more low noise amplifiers, and one RF switches, one or more receive filters, one or more transmit filters, one or more detectors Duplex filters, one or more multiplexers, one or more frequency multiplexing The RF front end 222 may include a 100 MHz to 100 MHz frequency band, ... It can transmit and receive RF signals associated with any suitable communications standard. The filter 223 may have any suitable characteristics as described with reference to any of the above embodiments. The piezoelectric substrate may include one or more multi-layer acoustic wave resonators, including combinations thereof.

[0140] The RF transceiver 224 transmits the RF signal to the RF front end for amplification and / or other processing. The transceiver 224 can also be provided to the RF front end 222. The transceiver 224 can also process RF signals provided by the low noise amplifiers of the processor. 225. The processor 225 may be a baseband processor. 225 provides any suitable baseband processing functionality for the wireless communication device 220. The memory 226 is accessible to the processor 225. 6 may store any suitable data for wireless communication device 220. The user interface 227 may include any suitable display, such as a display with touch screen capabilities. Any suitable user interface may be used.

[0141] FIG. 15B shows a filter 223 in the radio frequency front end 222 and a diversity receiver. 2 is a schematic diagram of a wireless communication device 230 including a second filter 233 in a receiving module 232. The wireless communication device 230 is similar to the wireless communication device 220 of FIG. The difference is that the wireless communication device 230 further includes a diversity receiving function. As shown, the wireless communication device 230 includes a diversity antenna 231 and a diversity The city antenna 231 includes a filter 233 configured to process the received signal. The diversity module 232 and the radio frequency front end 222 and the diversity The filter 233 includes a transceiver 234 that communicates with both the receiver module 232 and the filter 233. A device including any suitable combination of the features described with reference to any of the embodiments described. The piezoelectric substrate may include one or more multilayer acoustic wave resonators.

[0142] Although embodiments are described with reference to certain acoustic wave resonators, the presently disclosed Any suitable principles and advantages of the present invention may be applied to any other resonator such as a boundary acoustic wave resonator or a Lamb wave resonator. It can be applied to any suitable acoustic wave resonator.

[0143] Any of the above-described embodiments may be implemented in a mobile device such as a cellular handset. The principles and advantages of the embodiments may be realized by any of the embodiments described herein. For any system or apparatus, such as any uplink cellular device, that would benefit The teachings herein are applicable to a variety of systems. Although including several example embodiments, the teachings described herein are applicable to a variety of structures. All of the principles and advantages described herein can be used from about 450 MHz to 8 having frequencies ranging from about 30 kHz to 300 GHz, such as in the 0.5 GHz range It may be implemented in association with RF circuitry configured to process the signal.

[0144] Aspects of the present disclosure can be implemented in a variety of electronic devices. Examples include consumer electronic products, die and / or acoustic wave filter assemblies and / or packages. Components for consumer electronic products such as radio frequency modules, uplink wireless communication devices This may include, but is not limited to, devices, wireless communication infrastructure, electronic test equipment, etc. Examples of electronic devices are mobile phones such as smartphones, smart watches or Wearable computing devices such as earpieces, telephones, televisions, Computer monitors, computers, modems, handheld computers, laptops Computers, tablet computers, and personal digital assistants (PDAs) , microwave ovens, refrigerators, automobiles, stereo systems, DVD players, CD players, M Digital music players such as P3 players, radios, video cameras, cameras, digital cameras, portable memory chips, washing machines, dryers, washer / dryers, peripheral devices, watches Electronic devices may include, but are not limited to, unfinished electronic devices. It may also include products.

[0145] Throughout this specification and claims, unless the context clearly indicates otherwise, The terms "include," "comprise," and the like are intended to be inclusive as opposed to exclusive or exhaustive. In other words, it should be interpreted as meaning "including but not limited to." The word "coupled" as used herein means connected directly or through one or more intermediate elements. Similarly, as generally used herein, the term "component" refers to two or more elements that can be either one or the other. The word "connected" refers to either direct connection or connection via one or more intermediate elements. In addition, the words "here," "above," "below," and Words of similar import, when used in this Application, shall be deemed to be It refers to the entirety of this Application and not to any specific portion thereof. Where permitted, terms in the above detailed description using the singular or plural refer to the plural or plural respectively. The words "or" and "or" refer to a list of two or more items. covers all of the following interpretations of the word: any item in the list, All items in the list and any combination of items in the list.

[0146] Furthermore, the following are among others: "can," "might," "may," "might," "even Conditional language such as "if," "like," etc., used herein generally refers to situations where the Unless stated or understood otherwise by the context of use, a given embodiment that one embodiment includes certain features, elements and / or conditions while other embodiments do not. That is, such conditional language generally conveys features, elements, and / or It is not intended to suggest that any particular aspect or condition is required for one or more embodiments.

[0147] While certain embodiments have been described, it should be understood that these embodiments are presented by way of example only. It is not intended to limit the scope of the present disclosure. The novel methods, apparatus, and systems may be embodied in a variety of other forms. Various omissions, substitutions and changes in the form of the methods and systems described herein are intended to be included within the scope of this disclosure. For example, multiple blocks may be presented in a given sequence. However, alternative embodiments may perform similar functions with different components and / or circuit topologies. Some blocks can be deleted, moved, added, subdivided, combined, and / or modified. Each of these blocks can be implemented in a variety of different ways. Any suitable combination of the elements and steps of the various embodiments described above may be used in further embodiments. The appended claims and their equivalents are intended to cover this invention. It is intended to cover such forms or modifications as fall within the scope and spirit of the disclosure.

Claims

1. 1. An acoustic wave device, comprising: a piezoelectric layer on a substrate; interdigital transducer electrodes on the piezoelectric layer; a ground structure on the piezoelectric layer; a conductive layer disposed between the piezoelectric layer and the substrate; Including, The conductive layer is electrically connected to the ground structure.

2. A via extending through at least a portion of the piezoelectric layer connects the conductive layer to the ground structure. The acoustic wave device of claim 1 , wherein the acoustic wave device is included in an electrical path between the first and second electrodes.

3. The acoustic wave device of claim 2 , wherein the via is a filled via filled with a conductive material.

4. The acoustic wave device of claim 2 , wherein the via is a conformal via.

5. A conductive material extending along the sidewalls of the piezoelectric layer provides electrical insulation between the conductive layer and the ground structure. The acoustic wave device of claim 1 included in a path.

6. 10. The acoustic wave device of claim 1, wherein the ground structure includes a plurality of ground structure portions spaced apart from one another. Chair.

7. a temperature compensation layer disposed over the interdigital transducer electrodes; The acoustic wave device of claim 1 .

8. The acoustic wave device of claim 1 further comprising a dispersion adjustment layer disposed between the piezoelectric layer and the conductive layer. device.

9. The acoustic wave device of claim 8 , wherein the dispersion adjustment layer comprises silicon dioxide.

10. The acoustic wave device of claim 1 , wherein the conductive layer comprises aluminum.

11. The conductive layer has a thickness between approximately 10 nanometers and approximately 10 microns. The acoustic wave device of claim 1 .

12. The acoustic wave device of claim 1 , wherein the ground structure comprises a conductive plate.

13. The acoustic wave device of claim 1 , wherein the ground structure comprises a conductive pillar.

14. An acoustic wave filter, an acoustic wave device; with multiple other acoustic wave devices Including, The acoustic wave device includes a piezoelectric layer on a substrate and an interdigital transducer on the piezoelectric layer. a transducer electrode, a ground structure on the piezoelectric layer, and a structure disposed between the piezoelectric layer and the substrate; a conductive layer disposed thereon; the conductive layer is electrically connected to the ground structure; The acoustic wave device and the plurality of other acoustic wave devices filter radio frequency signals. acoustic wave filters arranged together to provide a

15. 1. A method of manufacturing an acoustic wave device, comprising: An acoustic wave device structure is provided, the acoustic wave device structure comprising a substrate and a front surface. a conductive layer on the substrate; a piezoelectric layer on the conductive layer; and an interdigital transducer on the piezoelectric layer. and a piezoelectric transducer electrode, the conductive layer being disposed between the substrate and the piezoelectric layer. And, The conductive layer is electrically connected to a ground structure above the piezoelectric layer. and grounding the A method comprising:

16. forming an opening through at least a portion of the piezoelectric layer to expose the conductive layer; 、 providing a conductive material in said opening; further comprising The electrically connecting means electrically connecting the conductive layer to the ground structure via the conductive material.

16. The method of claim 15, further comprising: causing the electrodes to be electrically connected.

17. The method of claim 16 , wherein the conductive material in the opening is a filled via.

18. Etching a portion of the piezoelectric layer; providing a conductive material to the etched portion of the piezoelectric layer; further comprising The electrically connecting means electrically connecting the conductive layer to the ground structure via the conductive material.

16. The method of claim 15, further comprising: causing the electrodes to be electrically connected.

19. forming a temperature compensation layer over the interdigital transducer electrodes; 16. The method of claim 15, comprising:

20. The providing step includes providing a piezoelectric layer disposed between the piezoelectric layer and the conductive layer in the acoustic wave device structure.

16. The method of claim 15, comprising providing a dispersion adjustment layer.

21. 1. An acoustic wave device, comprising: a piezoelectric layer on a substrate; interdigital transducer electrodes on the piezoelectric layer; a conductive layer disposed between the piezoelectric layer and the substrate; a ground structure disposed below the substrate; Including, the substrate is disposed between the conductive layer and the ground structure; The conductive layer is electrically connected to the ground structure.

22. A via extending through at least a portion of the substrate provides a connection between the conductive layer and the ground structure. The acoustic wave device of claim 21 , wherein the electrical path is

23. The acoustic wave device of claim 22 , wherein the via is a filled via.

24. The acoustic wave device of claim 22 , wherein the via is a conformal via.

25. A conductive material extending along the sidewall of the substrate provides an electrical path between the conductive layer and the ground structure. The acoustic wave device of claim 21 , wherein the acoustic wave device is included in a circuit.

26. 22. The acoustic wave detector of claim 21, wherein the ground structure includes a plurality of ground structure portions spaced apart from one another. Vice.

27. a temperature compensation layer disposed over the interdigital transducer electrodes; 22. The acoustic wave device of claim 21.

28. 22. The acoustic wave device of claim 21, further comprising an insulating layer disposed between the piezoelectric layer and the conductive layer. Vice.

29. The interdigital transducer electrodes are electrically connected to the ground structure.

22. The acoustic wave device of claim 21.

30. The conductive layer has a thickness between approximately 10 nanometers and approximately 10 microns.

22. The acoustic wave device of claim 21.

31. A first via extends from the ground structure to the conductive structure, and a second via extends through the conductive layer. extending from the ground structure to the interdigital transducer electrodes. Item 21. An acoustic wave device.

32. 22. The acoustic wave device of claim 21, wherein the acoustic wave device is arranged to generate surface acoustic waves. Chair.

33. An acoustic wave filter, an acoustic wave device; with multiple other acoustic wave devices Including, The acoustic wave device includes a piezoelectric layer on a substrate and an interdigital transducer on the piezoelectric layer. a transducer electrode, a conductive layer disposed between the piezoelectric layer and the substrate, and a conductive layer disposed under the substrate. and a ground structure disposed on the the substrate is disposed between the conductive layer and the ground structure; the conductive layer is electrically connected to the ground structure; The acoustic wave device and the plurality of other acoustic wave devices filter radio frequency signals. acoustic wave filters arranged together to provide a

34. 1. A method of manufacturing an acoustic wave device, comprising: An acoustic wave device structure is provided, the acoustic wave device structure comprising a substrate and a front surface. a conductive layer on the substrate; a piezoelectric layer on the conductive layer; and an interdigital transducer on the piezoelectric layer. and a piezoelectric transducer electrode, the conductive layer being disposed between the substrate and the piezoelectric layer. And, electrically connecting the conductive layer to a ground structure beneath the substrate; Including, The method of claim 1, wherein the substrate is disposed between the conductive layer and the ground structure.

35. forming an opening through at least a portion of the substrate; providing a conductive material in said opening; further comprising The electrically connecting means electrically connecting the conductive layer to the ground structure via the conductive material.

35. The method of claim 34, causing the electrodes to be electrically connected.

36. 36. The method of claim 35, wherein the conductive material forms a via through the substrate.

37. forming a temperature compensation layer over the interdigital transducer electrodes; 35. The method of claim 34, comprising:

38. The providing step includes providing a piezoelectric layer disposed between the piezoelectric layer and the conductive layer in the acoustic wave device structure.

35. The method of claim 34, including providing a dispersion adjustment layer.

39. The electrically connecting also includes connecting the ground structure and the interdigital transducer.

35. The method of claim 34, further comprising electrically connecting the probe to a transducer electrode.

40. After the electrically connecting, a first via extends from the ground structure to the conductive structure. A second via passes through the conductive layer from the ground structure to the interdigital transformer.

35. The method of claim 34, wherein the transducer electrode extends to the transducer electrode.

Images