Temperature-controlled substrate support for substrate processing system

Abstract

To provide a temperature-controlled substrate support for a substrate processing system.SOLUTION: A system for controlling the temperature of a substrate during processing in a substrate processing system includes a substrate support 16 defining a central section and a radially outer section. The substrate is disposed above both the central section and the radially outer section during processing. A heater 139 heats the central section. A heater 140 heats the radially outer section. A protrusion 160, which functions as a first heat sink, has one end in thermal communication with the central section. A second heat sink 180 has one end in thermal communication with the radially outer section. A temperature difference between the central section and the radially outer section during processing is greater than 10°C.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] [CROSS-REFERENCE TO RELATED APPLICATIONS] This application claims priority to U.S. Utility Application No. 15 / 593,987, filed May 12, 2017, the entire disclosure of which is incorporated herein by reference.

[0002] FIELD OF THE DISCLOSURE The present disclosure relates to substrate processing systems, and more particularly to a temperature regulated substrate support for a substrate processing system. [Background technology]

[0003] The discussion of the background art provided herein is for the purpose of presenting the content of the present disclosure generally. The inventions of the presently named inventors are not admitted expressly or impliedly as prior art to the present disclosure, not only to the extent that they are described in this background art section, but also in a manner that is not prior art at the time of filing.

[0004] During processing of a substrate, such as a semiconductor wafer, one or more film layers are deposited on the substrate. After deposition, the layers may be patterned and etched. During patterning, a photoresist or hard mask may be used to protect selected portions of the underlying layer. After processing, the photoresist or hard mask is removed using a stripping process. Summary of the Invention

[0005] A system for controlling the temperature of a substrate during processing in a substrate processing system includes a substrate support defining a central compartment and a radially outer compartment. The substrate is positioned above both the central compartment and the radially outer compartment during processing. A first heater is configured to heat the central compartment. A second heater is configured to heat the radially outer compartment. A first heat sink has one end in thermal communication with the central compartment. A second heat sink has one end in thermal communication with the radially outer compartment. A temperature difference between the central compartment and the radially outer compartment during processing is greater than 10°C.

[0006] In other features, the substrate is held on the substrate support by gravity and not by a mechanical clamp or an electrostatic chuck. The substrate support includes a first component including a central portion having a first thickness and a radial protrusion having a second thickness less than the first thickness. The second component is disposed radially outwardly below the first component and includes an annular portion and an axial protrusion connected to a radial outer edge of the annular portion of the second component and the radial protrusion of the first component.

[0007] In other features, a first gap is defined axially between a central portion of the first component and a central portion of the second component. A second gap is defined between a radially outer surface of the central portion and a radially inner surface of the axial protrusion. An upper surface of the central portion at least partially defines the central section. An upper surface of the axial protrusion at least partially defines the radially outer section.

[0008] In other features, the second component comprises a plurality of bores, and the first heat sink comprises a plurality of protrusions connected to the first component and extending through the plurality of bores.

[0009] In other features, the substrate support includes an upper surface at least partially defining a central section. The second component is disposed radially outwardly and below the first component. The first component and the second component are spaced apart to define a gap therebetween. The second component includes an upper surface at least partially defining a radially outer section.

[0010] In other features, the first component has a conical shape and the second component has an inverted conical shape. A plurality of spacers are disposed on the substrate support to provide a predetermined gap between the substrate and the substrate support during processing. The second heat sink comprises a bellows heat sink. The substrate support includes a plurality of notches defined in a central section and a radially outer section, the plurality of notches extending radially inward from an outer edge of the substrate support.

[0011] In other features, the temperature-regulated thermal mass is in thermal communication with opposite ends of the first heat sink and the second heat sink.

[0012] In other features, at least one of the central section and the radially outer section is maintained at a temperature in the range of 90° C. to 350° C. The temperature differential is in the range of 18° C. to 100° C. In other features, the process includes photoresist ashing, and at least one of the central section and the radially outer section is maintained at a temperature in the range of 90° C. to 350° C. The temperature differential is in the range of 18° C. to 100° C.

[0013] A system for controlling the temperature of a substrate during processing in a substrate processing system includes a substrate support including a first component including a central portion having a first thickness and partially defining a central section, and a radial protrusion having a second thickness greater than the first thickness. The second component is disposed radially outwardly below the first component and includes an annular portion. The axial protrusion is connected to the annular portion of the second component and a radially outer end of the radial protrusion of the first component, partially defining the radially outer section. The substrate is disposed above both the central section and the radially outer section during processing. The first heater is configured to heat the first component. The second heater is configured to heat the second component. The first heat sink has one end in thermal communication with the first component. The second heat sink has one end in thermal communication with the second component. A temperature difference between the first component and the second component during processing ranges from greater than 10°C to 100°C.

[0014] In other features, the substrate is held on the substrate support by gravity and not by a mechanical clamp or an electrostatic chuck. The upper surface of the central portion corresponds to the central section. The upper surface of the axial protrusion corresponds to the radially outer section.

[0015] In other features, the second component comprises a plurality of bores, and the first heat sink comprises a plurality of protrusions connected to the first component and extending through the plurality of bores.

[0016] In other features, a plurality of spacers disposed in the central section provide a predetermined gap between the substrate and the substrate support during processing. The substrate support includes a plurality of notches projecting radially inward from an outer edge of the substrate support.

[0017] In other features, the temperature-regulated thermal mass is in thermal communication with opposite ends of the first heat sink and the second heat sink. At least one of the central section and the radially outer section is maintained at a temperature in the range of 90° C. to 350° C. The temperature differential is in the range of 18° C. to 100° C.

[0018] In other features, the process includes photoresist ashing. At least one of the central compartment and the radially outer compartment is maintained at a temperature in the range of 90° C. to 350° C. The temperature differential is in the range of 18° C. to 100° C. The substrate is held on the substrate support by gravity and is not held by a mechanical clamp or an electrostatic chuck.

[0019] A system for controlling the temperature of a substrate during processing in a substrate processing system includes a substrate support including a first component including an upper surface at least partially defining a central section. A second component is disposed radially outwardly and below the first component. The first component and the second component are spaced apart to define a gap therebetween. The second component includes an upper surface at least partially defining the radially outer section. A first heater is configured to heat the first component. A second heater is configured to heat the second component. A first heat sink has one end in thermal communication with the first component. A second heat sink has one end in thermal communication with the second component. A temperature difference between the first component and the second component during processing is in a range of 10°C or more to 100°C.

[0020] In other features, the substrate is held on the substrate support by gravity and not by a mechanical clamp or an electrostatic chuck. The first component has a conical shape and the second component has an inverted conical shape. The second heat sink includes a bellows-type heat sink.

[0021] A plurality of spacers disposed in the central section provide a predetermined gap between the substrate and the substrate support during processing. The substrate support includes a plurality of notches projecting radially inward from an outer edge of the substrate support.

[0022] In other features, the temperature-regulated thermal mass is in thermal communication with opposite ends of the first heat sink and the second heat sink. At least one of the central section and the radially outer section is maintained at a temperature in the range of 90° C. to 350° C. The temperature differential is in the range of 18° C. to 100° C.

[0023] In other features, the treatment includes photoresist ashing. At least one of the central section and the radially outer section is maintained at a temperature in the range of 90° C. to 350° C. The temperature differential is in the range of 18° C. to 100° C.

[0024] Further scope of applicability of the present disclosure will become apparent from the detailed description, the claims, and the drawings. The detailed description and specific examples are for purposes of illustration only and are not intended to limit the scope of the present disclosure. [Brief explanation of the drawings]

[0025] The present disclosure will become more fully understood from the detailed description and accompanying drawings.

[0026] [Figure 1] FIG. 1 is a functional block diagram of an example substrate processing system according to the present disclosure.

[0027] [Figure 2] 2 is a cross-sectional view of the example substrate support of FIG. 1 in accordance with the present disclosure.

[0028] [Figure 3] FIG. 3 is a plan view of the substrate support of FIG. 2;

[0029] [Figure 4] Graph showing example temperature variation as a function of distance from the center of the substrate. [Figure 5] Graph showing example temperature variation as a function of distance from the center of the substrate.

[0030] [Figure 6] 2 is a cross-sectional view of another example of the substrate support of FIG. 1 in accordance with the present disclosure. [Figure 7] 2 is a cross-sectional view of another example of the substrate support of FIG. 1 in accordance with the present disclosure.

[0031] [Figure 8A] 10 is a graph depicting photoresist removal as a function of distance from the substrate center for different processing temperatures according to the present disclosure. [Figure 8B] 10 is a graph depicting photoresist removal as a function of distance from the substrate center for different processing temperatures according to the present disclosure.

[0032] [Figure 9] 1 is a flow chart depicting steps for processing a substrate according to the present disclosure.

[0033] In the drawings, reference numbers may be reused to identify similar and / or identical elements. DETAILED DESCRIPTION OF THE INVENTION

[0034] In some photoresist stripping processes, the photoresist layer has a non-uniform thickness. That is, the photoresist layer is thicker (or thinner) at the edge of the substrate and thinner (or thicker) in the center of the substrate. The thickness of the photoresist can also vary from substrate to substrate or batch to batch. The photoresist layer can be stripped using a uniform wafer temperature, but the stripping process would need to be run long enough to completely remove the thicker photoresist at the edge (or center). However, the center (or edge) of the wafer may be over-etched, potentially damaging the underlying layers.

[0035] In another example, the photoresist stripping process used may have a non-uniform ashing rate from center to edge, i.e., even when the photoresist layer has a uniform thickness from center to edge, the photoresist stripping process may remove more (or less) at the center than at the edge.

[0036] Photoresist strip rates are typically highly temperature dependent. Systems and methods according to the present disclosure compensate for non-uniform photoresist layer thickness and / or process ashing rate by using a temperature-regulated substrate support to create a non-uniform wafer temperature profile. In some examples, a temperature difference ranging from 10° C. to 100° C. is generated between the center and edge to produce different ashing rates that can vary by more than + / −10%, + / −20%, or more. In some examples, a temperature difference ranging from 18° C. to 100° C. is generated between the center and edge to produce different ashing rates that can vary by more than + / −10%, + / −20%, or more. In some examples, a temperature difference ranging from 25° C. to 100° C. is generated between the center and edge to produce different ashing rates that can vary by more than + / −10%, + / −20%, or more.

[0037] In some examples, the substrate support may be made of a material with high thermal conductivity, such as aluminum. Therefore, creating a temperature non-uniformity is a challenge. In some examples, the substrate is held by gravity and not mechanically clamped or held by an electrostatic chuck. Furthermore, the gas pressure in the processing chamber is relatively low (e.g., in the range of 1 Torr to 2 Torr). Consequently, the gas transport medium has low thermal conductivity. These conditions mean that the temperature of the substrate is much lower than the temperature of the substrate support. Therefore, a very large temperature variation across the substrate support is required to create the desired temperature non-uniformity and compensate for variations in photoresist thickness.

[0038] In some examples, the temperature non-uniformity setting is used for a batch of substrates. In other examples, the temperature non-uniformity setting is set for an individual substrate based on the measured photoresist thickness profile of the incoming substrate. For example, the photoresist layer thickness may be measured in situ using non-contact optical interferometry before the substrate enters the processing chamber or while the substrate is in the chamber, although other methods for measuring the photoresist layer thickness may be used.

[0039] The systems and methods disclosed herein provide two independently controlled compartments, a central compartment and a radially outer compartment, to drive a thermal gradient from the center to the edge of the substrate. The systems and methods provide center-to-edge process tuning capabilities. In a first example, the substrate support provides a uniform surface for the substrate, driving a thermal gradient across a relatively narrow section between the central compartment and the radially outer compartment. In another example, the central compartment and the radially outer compartment are separated by a gap, creating a larger temperature difference between the central compartment and the radially outer compartment, driving a larger thermal gradient across the substrate. In two examples, each compartment may be provided with a heat sink to enable precise temperature control. In some examples, both heat sinks are in thermal communication with a temperature-controlled thermal mass.

[0040] Referring now to FIG. 1 , an example of a substrate processing system 10 is shown. Although a particular processing chamber is shown, other types of chambers may be used. The substrate processing system 10 includes a lower chamber 12 and a gas distribution device 13, such as a faceplate or showerhead 14 having spaced-apart through-holes. A substrate support 16 may be disposed in the lower chamber 12. During use, a substrate 18 (such as a semiconductor wafer or other type of substrate) is disposed on the substrate support 16.

[0041] The substrate processing system 10 includes a gas supply system 20 for supplying a gas mixture (such as a photoresist strip process gas) and / or a purge gas. By way of example only, the gas supply system 20 may include one or more gas sources 22-1, 22-2, ..., and 22-N (collectively, gas sources 22), valves 24-1, 24-2, ..., and 24-N (collectively, valves 24), and mass flow controllers (MFCs) 26-1, MFC 26-2, ..., and MFC 26-N (collectively, MFCs 26), where N is an integer greater than zero.

[0042] The output of the gas delivery system 20 may be mixed in a manifold 30 and delivered to an upper chamber 32 disposed above the gas distribution device 13. In some examples, the upper chamber 32 is dome-shaped. The plasma source includes an inductive coil 34 disposed around the upper chamber 32. A plasma power supply and matching network 38 selectively supplies radio frequency (RF) plasma power or microwave (MW) plasma power to the inductive coil 34. While an inductively coupled plasma (ICP) system is shown, other types of plasma generation methods may be used. For example, a remote plasma source may be used. Alternatively, the plasma may be generated directly within the processing chamber. By way of example only, a capacitively coupled plasma (CCP) system or other suitable type of plasma system may be used. In yet other examples, the processing chamber performs deposition or etching without a plasma.

[0043] The controller 40 may be connected to one or more sensors 41 that monitor operating parameters in the processing chamber, such as temperature, pressure, etc. Two or more heaters 42 may be provided to heat two or more sections of the substrate support 16 and the substrate 18 to a desired process temperature. The heaters 42 may include resistive heating elements, fluid paths, thermoelectric devices, etc. In some examples, the heaters 42 comprise two or more sections that are independently controllable by the controller 40. In some examples, the heaters 42 independently control heat to two or more sections.

[0044] The controller 40 controls additional valves 50 and pumps 52 to control the pressure and evacuate gases from the process chamber. In some examples, the pump 52 is a turbomolecular pump. In some examples, the pressure in the chamber is maintained in a range of 0.5 Torr to 3 Torr. In some examples, the pressure in the chamber is maintained in a range of 1 Torr to 2 Torr. The controller 40 may be used to control the gas delivery system 20, the heater 42, the valves 50, the pump 52, and the plasma generated by the plasma source.

[0045] In some examples, the controller 40 is configured to supply a gas mixture having a predetermined gas ratio to the processing chamber. If a plasma is used, the controller 40 is also configured to supply the plasma from a remote plasma source or strike the plasma in the processing chamber.

[0046] One or more sensors 80, such as optical interference sensors, may be used to measure the thickness of an outer layer (e.g., a photoresist layer) of the substrate at various radial distances from the center of the substrate. The sensors 80 may perform the measurements in-situ in the processing chamber before the substrate enters the chamber, or as the substrate enters the chamber, or at another station. The thickness measurements may be output to the controller 40. In some examples, the controller 40 varies the power output of the heater 42 to the central and radially outer sections to create a desired temperature gradient (increasing or decreasing temperature from the center to the edges) based on the different thicknesses measured by the sensors 80.

[0047] In some examples, the temperature-controlled thermal mass 84 is in thermal communication with one or more heat sinks (described below). The temperature-controlled thermal mass 84 is in fluid communication with a fluid source 86, such as a liquid source. A pump 88 may be used to control the flow of fluid to a passage 89 within the temperature-controlled thermal mass 84. A temperature sensor 90 may be used to detect the fluid temperature and / or the temperature of the temperature-controlled thermal mass 84. In some examples, the temperature-controlled thermal mass 84 comprises a block of aluminum.

[0048] 2 , a substrate support 16 is shown comprising a first component 100 having a central cylindrical portion 110 and an annular radial protrusion 114. The central cylindrical portion 110 and the annular radial protrusion 114 of the first component 100 define generally coplanar upper surfaces 118 and 120. A substrate 18 is disposed on the upper surfaces 118 and 120 during processing. The thickness of the central cylindrical portion 110 in the axial direction is greater than the thickness of the annular radial protrusion 114. In some examples, the thickness of the central cylindrical portion 110 of the first component 100 is greater than two or four times the thickness of the annular radial protrusion 114 of the first component 100.

[0049] The second component 126 includes a central cylindrical portion 128 and an annular radial protrusion 130. A gap 132 is formed radially between a radially outer surface 133 of the central cylindrical portion 110 and a radially inner surface 134 of the annular axial protrusion 130, and between a lower surface of the radial protrusion and an upper surface of the second component. In some examples, the gap 132 has an annular shape. A gap 136 is defined between a lower surface 137 of the first component 100 and an upper surface 138 of the second component 126. In some examples, the gap 136 is generally radially continuous.

[0050] Heaters 139 and 140 are used to separately control the heating of first component 100 and second component 126, respectively. End 141 of annular axial protrusion 130 may be attached to end 144 of annular radial protrusion 114 of first component 100. In some examples, end 141 of annular axial protrusion 130 is welded to end 144 of annular radial protrusion 114 of first component 100. In some examples, electron beam welding is used.

[0051] The second component 126 includes a plurality of spaced apart bores 150. A plurality of protrusions 160 function as a first heat sink and are connected to or extend from a lower surface 137 of the first component 100. The plurality of protrusions 160 extend through the plurality of spaced apart bores 150 formed in the second component 126 and are connected to a heat sink structure 170 disposed below the second component 126. A gap 162 is formed between the plurality of protrusions 160 and the plurality of spaced apart bores 150.

[0052] A second heat sink 180 connects the second component 126 to the heat sink structure 170. In some examples, the heat sink structure 170 may be thermally connected to the temperature-controlled thermal mass 84. Because the substrate and substrate support may be heated by the plasma, the dimensions and / or configuration of the heat sink and temperature-controlled thermal mass 84 are determined in part by the minimum process temperature desired for the substrate during processing.

[0053] 3, the substrate support 16 may include a plurality of notches 200 (or fingers) extending inward from a radially outer end 202 of the substrate support. The notches 200 provide clearance to allow the substrate 18 to be placed and picked up from the substrate support 16. During operation, the temperature of the substrate support 16 creates a temperature gradient. That is, different temperatures are provided between the concentric temperature rings 210-1, 210-2, 210-3, and 210-4. A temperature difference may be provided between the portion of the substrate support 16 located inside the temperature ring 210-1 and the portion outside the temperature ring 210-4. The temperature difference is defined between the temperature range 210-1 and the temperature ring 210-4. In some examples, the temperature difference is greater than 10°C, 18°C, 25°C, or another value up to 100°C.

[0054] During operation, when the first component 100 is hotter than the second component 126, heat flows from the first component 100 through the plurality of protrusions 160 to the heat sink structure 170. Heat also flows from the first component 100 through the annular radial protrusion 114 to the axial protrusion 130 of the second component 126. Due to the air gap 132 and the relative thickness of the smaller annular radial protrusion 114, the annular radial protrusion 114 exhibits a temperature gradient from the temperature of the first component 100 to the temperature of the second component 126. Heat flows in the opposite direction when the first component 100 is cooler than the second component 126.

[0055] 4-5, examples of temperature variation as a function of distance from the center of the substrate are shown. In FIG. 4, the temperature increases from the center temperature to the edge temperature. In FIG. 5, the temperature decreases from the center temperature to the edge temperature.

[0056] 6-7, the substrate support 16 comprises a central component 250 and an outer component 260. A gap 261 is defined between the central component 250 and the outer component 260. The heating of the central component 250 and the outer component 260 is varied. In some examples, separate heat sinks are connected to the central component 250 and the outer component 260.

[0057] Upper surfaces 262 and 264 of central component 250 and outer component 260 define surfaces for receiving substrate 18. In some examples, central component 250 has a generally conical lower surface and outer component 260 has an inverted conical upper surface to provide a complementary fit. Outer component 260 includes a lower portion 280 extending radially inward and an upper portion 282 extending axially upward. Upper portion 282 is disposed about radially outer end 266 of central component 250.

[0058] Heating coil 284 and heating coil 286 are positioned in thermal contact with central component 250 and outer component 260, respectively, allowing for individual temperature control of central component 250 and outer component 260. First heat sink 288 is positioned below central component 250 and outer component 260, with one end in thermal contact with central component 250. Second heat sink 290 is positioned below central component 250 and outer component 260, with one end in thermal contact with outer component 260. In some examples, heat sink 290 is a bellows-type heat sink, although other types of heat sinks may be used. Central component 250 and outer component 260 may include the aforementioned notch 294 to allow substrates to be placed and picked up.

[0059] In FIG. 7, a first thermocouple 300 and a second thermocouple 310 may be used to monitor the temperatures of the central component 250 and the outer component 260, respectively.

[0060] In FIG. 6 , a plurality of height adjustment mechanisms 320 are disposed on the upper surface 262 and may be used to adjust the height of the substrate 18 relative to the upper surface of the substrate support 16. In some examples, the height adjustment mechanisms 320 set the substrate height to a range of 0.003" to 0.01" above the upper surface of the substrate support 16. In some examples, the substrate height is maintained at 0.006" above the upper surface of the substrate support. In some examples, the plurality of height adjustment mechanisms 320 comprises three or more height adjustment mechanisms disposed at spaced locations around the central component 250 to support the substrate 18. As will be appreciated, the height adjustment mechanisms 320 allow for clearance adjustment to vary the amount of thermocouple contact from the substrate support 16 to the substrate 18. In some examples, the height adjustment mechanism 320 comprises a sphere 350 and a height adjuster 352 disposed in a cavity 354 formed in the upper surface of the central component 250. The sphere 350 provides a reduced contact area with the bottom-facing surface of the substrate.

[0061] 7, multiple height adjustment mechanisms 340 may be provided to adjust the height of the central component 250 relative to the outer components 260. In some examples, the multiple height adjustment mechanisms 340 include three or more height adjustment mechanisms 340 arranged at spaced apart locations. As will be appreciated, the height adjustment mechanisms 340 allow for adjustment of the gap between the central component 250 and the outer components 260 to change the thermocouple volume. In some examples, the height adjustment mechanisms 340 may be provided to adjust the height of the central component 250 relative to the outer components 260 ...

[0062] 40 includes a sphere 370 and a height adjuster 372 disposed in a cavity 374 formed in the outer component 260. In some examples, the sphere 370 is received in a slot 380 in a bottom surface 382 of the central component 250. In some examples, the sphere 370 is made of sapphire, although other materials may be used.

[0063] In some examples, the substrate support 16 defines a temperature difference between the central section and the radially outer section in a range of 10°C to 100°C. In some examples, the substrate support 16 defines a temperature difference between the central section and the radially outer section in a range of 18°C ​​to 100°C. In some examples, the ashing rate varies by + / - 10% between the central section and the radially outer section. In other examples, the ashing rate varies by + / - 20% between the central section and the radially outer section. In some examples, the substrate support 16 is maintained at a temperature in a range of 90°C to 350°C.

[0064] Referring now to Figures 8A and 8B, photoresist removal is shown as a function of distance from the center of the substrate. As shown in Figure 8A, different substrate temperatures result in different ashing rates. When normalized at 200°C, this illustrates temperature-based tuning capabilities. Temperature tuning capabilities can be used to compensate for thickness variations in subsequent photoresist layers and / or variations in processing, such as photoresist treatment processes.

[0065] 9, a method 400 for processing a substrate is shown. At 404, the substrate is placed on a substrate support in a processing chamber. At 408, the thickness of an outer layer of the substrate at various locations may be measured. In some examples, the measurements may be performed using an optical interferometric sensor. At 412, the temperature of the substrate support is altered to create a temperature difference of greater than 10° C. In some examples, the temperature difference is based on the measurement measured at 408 or a predetermined measurement estimate. At 414, processing of the outer layer of the substrate is performed. In some examples, the processing includes stripping a photoresist layer. At 416, the method determines whether the process period has ended. If 416 is false, the method continues at 414. If 416 is true, the method returns.

[0066] The foregoing description is merely exemplary in nature and is not intended to limit the present disclosure, its application, or uses. The broad scope of the present disclosure may be embodied in various forms. Thus, while the present disclosure includes specific examples, other variations will become apparent upon review of the drawings, the specification, and the following claims, and the true scope of the present disclosure should not be so limited. It should be understood that one or more steps within a method may be performed in a different order (or simultaneously) without altering the principles of the present disclosure. Furthermore, although each embodiment is described above as having particular features, one or more of those features described with respect to an embodiment of the present disclosure may also be implemented in other embodiments and / or in combination with features of other embodiments (even if the combination is not expressly stated). In other words, the described embodiments are not mutually exclusive, and permutations of one or more embodiments with each other remain within the scope of the present disclosure.

[0067] Spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers, etc.) are described using various terms, including "connected," "engaged," "coupled," "adjacent," "adjacent," "on," "above," "below," and "disposed." Unless expressly specified as "direct," when a relationship between a first element and a second element is described in the above disclosure, the relationship may be direct, with no other intervening elements present between the first and second elements, or may be indirect, with one or more intervening elements (spatial or functional) present between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be interpreted to mean non-exclusive logic or logic using (A or B or C), and not "at least one of A, at least one of B, and at least one of C."

[0068] In some embodiments, the controller is part of a system, such as may be part of the examples described above. Such systems may include semiconductor processing equipment, including processing tools, chambers, processing platforms, and / or specific processing components (such as wafer pedestals and gas flow systems). These systems may be integrated with electronics for controlling pre-, during-, and post-processing operations of semiconductor wafers or substrates. The electronics may be referred to as a "controller," which may control various parts or subcomponents of the system. The controller may be programmed to control the processes disclosed herein, including process gas supply, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid supply settings, position operation settings, wafer transfer to and from tools and other transfer tools, and / or load locks connected or coupled to a particular system, depending on the processing conditions and / or type of system.

[0069] Generally, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in firmware format that store program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various personalizations (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer or system. In some embodiments, the operational parameters may be part of a recipe defined by a process engineer to implement one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0070] In some embodiments, the controller may be part of or coupled to a computer integrated with, coupled to, or otherwise networked to the system. For example, the controller may be in the “cloud” or all or part of a fab host computer system that enables remote access of wafer processing. The computer may enable remote access to the system to monitor the progress of manufacturing operations, examine the history of past manufacturing operations, examine trends or performance benchmarks from multiple manufacturing operations, modify parameters of a current process, set processing steps following a current process, or initiate a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system over a network, which may include a local network or the Internet. The remote computer may include a user interface that enables entry or programming of parameters and / or settings that are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data specifying parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool the controller is configured to connect to or control. Thus, as discussed above, the controller may be distributed, for example, by including one or more individual controllers networked together and cooperating toward a common purpose, such as the process or control described herein. An example of a controller distributed for such a purpose would be one or more integrated circuits on the chamber that are located remotely (e.g., at the platform level or as part of a remote computer) and communicate with one or more integrated circuits that cooperate to control the process in the chamber.

[0071] Without being limited thereto, example systems may include plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, clean chambers or modules, bevel edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and other semiconductor processing systems related to or usable in the fabrication and / or manufacturing of semiconductor wafers.

[0072] As mentioned above, depending on the process steps being performed by the tool, the controller may be in communication with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools installed throughout the factory, a main computer, another controller, or tools used to transport materials to and from tool locations and / or load ports in a semiconductor fabrication factory to transport wafer containers.

Claims

1. 1. A system for controlling the temperature of a substrate during processing in a substrate processing system, comprising: a substrate support defining a central section and a radially outer section, the substrate being positioned above both the central section and the radially outer section during processing; a first heater configured to heat the central section; a second heater configured to heat the radially outer section; and a first heat sink having one end in thermal communication with the central section; a second heat sink having one end in thermal communication with the radially outer section; A system wherein the temperature difference between the central section and the radially outer section during the processing is greater than 10°C.

2. 10. The system of claim 1, A system wherein the substrate is held on the substrate support by gravity and is not held by a mechanical clamp or an electrostatic chuck.

3. 10. The system of claim 1, The substrate support comprises: A first component, a central portion having a first thickness; a first component including a radial protrusion having a second thickness less than the first thickness; a second component disposed radially outwardly and downwardly of the first component, an annular portion; a second component including an axial protrusion connected to the annular portion of the second component and to a radial outer edge of the radial protrusion of the first component; A system comprising:

4. 4. The system of claim 3, a first gap is defined axially between the central portion of the first component and the central portion of the second component; a second gap defined between a radially outer surface of the central portion and a radially inner surface of the front axial projection.

5. 4. The system of claim 3, an upper surface of the central portion at least partially defines the central section; a top surface of the axial protrusion at least partially defines the radially outer section.

6. 4. The system of claim 3, the second component comprises a plurality of bores; The first heat sink is connected to the first component and includes a plurality of protrusions extending through the plurality of bores.

7. 10. The system of claim 1, The substrate support comprises: a first component having an upper surface at least partially defining the central section; a second component disposed radially outwardly and downwardly of the first component, the first component and the second component are spaced apart to define a gap therebetween; The second component includes an upper surface that at least partially defines the radially outer section.

8. 8. The system of claim 7, The system wherein the first component has a conical shape and the second component has an inverted conical shape.

9. 10. The system of claim 1, further comprising: The system comprises a plurality of spacers disposed on the substrate support to provide a predetermined gap between the substrate and the substrate support during processing.

10. 10. The system of claim 1, The system, wherein the second heat sink comprises a bellows heat sink.

11. 10. The system of claim 1, The substrate support includes a plurality of notches defined in the central section and the radially outer section, the notches extending radially inward from an outer edge of the substrate support.

12. 10. The system of claim 1, further comprising: a temperature-controlled thermal mass in thermal communication with opposite ends of the first heat sink and the second heat sink;

13. 10. The system of claim 1, at least one of the central section and the radially outer section is maintained at a temperature in the range of 90°C to 350°C; The temperature difference is in the range of 18°C ​​to 100°C.

14. 10. The system of claim 1, the process includes photoresist ashing; at least one of the central section and the radially outer section is maintained at a temperature in the range of 90°C to 350°C; The temperature difference is in the range of 18°C ​​to 100°C.

15. 1. A system for controlling the temperature of a substrate during processing in a substrate processing system, comprising: A substrate support, A first component, a central portion having a first thickness and partially defining a central section; a first component including a radial protrusion having a second thickness greater than the first thickness; a second component disposed radially outwardly and downwardly of the first component, an annular portion; a second component including an axial protrusion connected to a radial outer edge of the annular portion of the second component and the radial protrusion of the first component, the axial protrusion partially defining a radial outer section, wherein the substrate is positioned above both the central section and the radial outer section during processing; and a first heater configured to heat the first component; a second heater configured to heat the second component; and a first heat sink having one end in thermal communication with the first component; a second heat sink having one end in thermal communication with the second component; A system wherein the temperature difference between the first component and the second component during the processing is in the range of greater than 10°C to 100°C.

16. 16. The system of claim 15, A system wherein the substrate is held on the substrate support by gravity and is not held by a mechanical clamp or an electrostatic chuck.

17. 16. The system of claim 15, a top surface of the central portion corresponds to the central section and a top surface of the axial protrusion corresponds to the radially outer section.

18. 16. The system of claim 15, the second component comprises a plurality of bores; The first heat sink is connected to the first component and includes a plurality of protrusions extending through the plurality of bores.

19. 16. The system of claim 15, further comprising: The system comprises a plurality of spacers disposed in the central compartment to provide a predetermined gap between the substrate and the substrate support during processing.

20. 16. The system of claim 15, The substrate support includes a plurality of notches projecting radially inward from an outer edge of the substrate support.

21. 16. The system of claim 15, further comprising: a temperature-controlled thermal mass in thermal communication with opposite ends of the first heat sink and the second heat sink;

22. 16. The system of claim 15, at least one of the central section and the radially outer section is maintained at a temperature in the range of 90°C to 350°C; The temperature difference is in the range of 18°C ​​to 100°C.

23. 16. The system of claim 15, the process includes photoresist ashing; at least one of the central section and the radially outer section is maintained at a temperature in the range of 90°C to 350°C; The temperature difference is in the range of 18°C ​​to 100°C.

24. 16. The system of claim 15, A system wherein the substrate is held on the substrate support by gravity and is not held by a mechanical clamp or an electrostatic chuck.

25. 1. A system for controlling the temperature of a substrate during processing in a substrate processing system, comprising: A substrate support, a first component having a top surface at least partially defining a central section; a second component disposed radially outwardly and downwardly of the first component, a substrate support, the first component and the second component being spaced apart to define a gap therebetween, the second component having an upper surface at least partially defining a radially outer section; a first heater configured to heat the first component; a second heater configured to heat the second component; and a first heat sink having one end in thermal communication with the first component; a second heat sink having one end in thermal communication with the second component; A system wherein the temperature difference between the first component and the second component during the processing is in the range of greater than 10°C to 100°C.

26. 26. The system of claim 25, A system wherein the substrate is held on the substrate support by gravity and is not held by a mechanical clamp or an electrostatic chuck.

27. 26. The system of claim 25, The system wherein the first component has a conical shape and the second component has an inverted conical shape.

28. 26. The system of claim 25, The system, wherein the second heat sink comprises a bellows heat sink.

29. 26. The system of claim 25, further comprising: The system comprises a plurality of spacers disposed in the central compartment to provide a predetermined gap between the substrate and the substrate support during processing.

30. 26. The system of claim 25, The substrate support includes a plurality of notches projecting radially inward from an outer edge of the substrate support.

31. 26. The system of claim 25, further comprising: a temperature-controlled thermal mass in thermal communication with opposite ends of the first heat sink and the second heat sink;

32. 26. The system of claim 25, at least one of the central section and the radially outer section is maintained at a temperature in the range of 90°C to 350°C; The temperature difference is in the range of 18°C ​​to 100°C.

33. 26. The system of claim 25, the process includes photoresist ashing; at least one of the central section and the radially outer section is maintained at a temperature in the range of 90°C to 350°C; The temperature difference is in the range of 18°C ​​to 100°C.

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