Processing method and processing program

Abstract

To prevent an inner wall of a hole from breaking up during processing for forming the hole.SOLUTION: A processing method comprises: a primary chamfering step of performing V-chamfering to a first depth on a first region in which a first hole is formed, a second region in which a hole is formed, and a third region in which a hole is formed, using a first drill; a first guide hole forming step of performing shallow-hole processing to a second depth deeper than the first depth, on the first region in which a hole is formed and the third region in which a hole is formed, using a second drill having a first diameter; a second guide hole forming step of performing shallow-hole processing to the second depth, on the second region in which a hole is formed, using a third drill having a second diameter smaller than the first diameter; a first main-hole forming step of performing deep-hole processing to a third depth deeper than the second depth, on the first region in which a hole is formed and the third region in which a hole is formed, using a fourth drill having a third diameter larger than the first diameter; and a second main-hole forming step of performing deep-hole processing to the third depth, on the second region in which a hole is formed, using a fifth drill having the third diameter.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a processing method and the like. [Background technology]

[0002] Conventionally, a hole forming method using a drill has been proposed, as in Patent Document 1. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2004-314266 Summary of the Invention [Problem to be solved by the invention]

[0004] However, when the intervals between the hole formation target regions are narrow, there is a risk that the inner walls of the formed holes may collapse.

[0005] Therefore, one object of the present invention is to make the inner walls of the holes less likely to collapse during hole formation processing. Other objects of the present invention will become apparent from the description of this specification. [Means for solving the problem]

[0006] One aspect of the present invention is a processing method for forming holes in three or more hole formation target regions in a hole formation target object including the three or more hole formation target regions, the three or more hole formation target regions including at least a first hole formation target region, a second hole formation target region, and a third hole formation target region, the first hole formation target region, the second hole formation target region, and the third hole formation target region being arranged adjacent to each other in a predetermined arrangement direction, the second hole formation target region being disposed between the first hole formation target region and the third hole formation target region, the processing method forming holes in each of the hole formation target regions, the processing method including: performing V-chamfering of a first depth on the first hole formation target region, the second hole formation target region, and the third hole formation target region using a first drill. a first guide hole forming process in which a second drill of a first diameter is used to drill shallow holes to a second depth deeper than the first depth in the first hole formation target area and the third hole formation target area; a second guide hole forming process in which a third drill of a second diameter smaller than the first diameter is used to drill shallow holes to the second depth in the second hole formation target area; a first main hole forming process in which a fourth drill of a third diameter larger than the first diameter is used to drill deep holes or through holes to a third depth deeper than the second depth in the first hole formation target area and the third hole formation target area; and a second main hole forming process in which a fifth drill of the third diameter is used to drill deep holes or through holes to the third depth in the second hole formation target area.

[0007] According to the above aspect of the present invention, the inner wall of the hole can be made less likely to collapse during hole formation processing. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a configuration diagram of a machining center and an object in which a hole is to be formed (a first workpiece, a second workpiece) in a first embodiment and a second embodiment. [Figure 2] FIG. 2 is a top view of the first workpiece. [Figure 3] FIG. 10 is a cross-sectional view of the first workpiece and the first drill, illustrating a state in which V-chamfering of a 15th region is being performed in the primary chamfering process in the first embodiment. [Figure 4] 10 is a cross-sectional view of the first workpiece and the second drill, illustrating a state in which shallow hole drilling of a 15th region is being performed in the first guide hole forming step in the first embodiment. FIG. [Figure 5] 10 is a cross-sectional view of the first workpiece and the third drill, illustrating a state in which shallow hole drilling of a fourteenth region is being performed in the second guide hole forming step in the first embodiment. FIG. [Figure 6] FIG. 10 is a cross-sectional view of the first workpiece and the fourth drill, illustrating a state in which deep hole drilling of a 15th region is being performed in the first main hole forming step in the first embodiment. [Figure 7] 10 is a cross-sectional view of the first workpiece and the sixth drill, illustrating a state in which deep hole drilling of a fourteenth region is being performed in the pilot hole forming step in the first embodiment. FIG. [Figure 8] FIG. 10 is a cross-sectional view of the first workpiece and the fifth drill, illustrating a state in which deep hole drilling of a fourteenth region is being performed in the second main hole forming step in the first embodiment. [Figure 9] 10 is a cross-sectional view of the first workpiece and the first drill, illustrating a state in which V-chamfering of a 15th region is being performed in the secondary chamfering step in the first embodiment. FIG. [Figure 10] FIG. 10 is a top view of the second workpiece. [Figure 11] FIG. 11 is a cross-sectional view of the second workpiece and the first drill, showing a state in which V-chamfering of the 42nd region is being performed in the primary chamfering process in the second embodiment. [Figure 12] 10 is a cross-sectional view of the second workpiece and the second drill, illustrating a state in which shallow hole drilling of a 32nd region is being performed in the first guide hole forming step in the second embodiment. FIG. [Figure 13] 10 is a cross-sectional view of the second workpiece and the third drill, illustrating a state in which shallow hole drilling of the 42nd region is being performed in the second guide hole forming step in the second embodiment. FIG. [Figure 14] FIG. 10 is a cross-sectional view of the second workpiece and the fourth drill, illustrating a state in which deep hole drilling of the 32nd region is being performed in the first main hole forming step in the second embodiment. [Figure 15]10 is a cross-sectional view of the second workpiece and the sixth drill, illustrating a state in which deep hole drilling of the 42nd region is being performed in the pilot hole forming step in the second embodiment. FIG. [Figure 16] FIG. 10 is a cross-sectional view of the second workpiece and the fifth drill, illustrating the state in which deep hole drilling of the 42nd region is being performed in the second main hole forming step in the second embodiment. [Figure 17] FIG. 10 is a cross-sectional view of the second workpiece and the first drill, showing the state in which V-chamfering of the 42nd region is being performed in the secondary chamfering step in the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] The processing system according to the first embodiment will be described below with reference to the drawings. Note that the embodiments are not limited to the following embodiments. Furthermore, the content described in one embodiment is, in principle, also applicable to other embodiments. Furthermore, each embodiment and each modified example can be combined as appropriate.

[0010] To explain the directions, the left-right direction of the machining center 10 is defined as the x-direction, the front-rear direction perpendicular to the x-direction as the y-direction, and the approximately vertical direction perpendicular to the x- and y-directions as the z-direction. In Figure 1 and other figures, the directions indicated by the arrows on the x, y, and z-axes are defined as the rightward, forward, and upward directions, respectively. However, the definitions of the x-direction and the like are merely examples, and for example, the x-direction may indicate the front-rear direction and the y-direction may indicate the left-right direction.

[0011] (Machining Center 10) The machining system in the first embodiment includes a machining center 10. As shown in Fig. 1, the machining center 10 includes a bed 11, a column 13, a table 15, a saddle 17, a ram 19, a spindle head 21, a tool 23, a tool magazine 25, an ATC (automatic tool changer) 27, and an NC device (numerical control device) 29. The machining center 10 is not limited to a vertical machining center in which the tool 23 is held so as to extend in the z direction, but may also be a horizontal machining center in which the tool 23 is held so as to extend in a horizontal direction (for example, the x direction).

[0012] The bed 11 functions as a base that holds each part of the machining center 10. The bed 11 holds the table 15 in a state where it can move in the y direction. The column 13 extends in the z direction above the bed 11 and holds the saddle 17 in a state where it can move in the x direction. The table 15 holds a first workpiece (object to be formed with a hole) 51. The saddle 17 holds the ram 19 in a state where it can move in the z direction. The ram 19 holds a spindle head 21. The spindle head 21 holds one of the tools 23.

[0013] The tools 23 include a first drill 231, a second drill 232, a third drill 233, a fourth drill 234, a fifth drill 235, and a sixth drill 236. The tool magazine 25 holds the tools 23 that are not attached to the spindle head 21. The ATC 27 takes out one tool 23 from the tools 23 held in the tool magazine 25 and attaches it to the spindle head 21, or stores the tool 23 attached to the spindle head 21 in the tool magazine 25.

[0014] 1 shows, as an example, a state in which the spindle head 21 holds a fourth drill 234, and the tool magazine 25 holds a first drill 231, a second drill 232, a third drill 233, a fifth drill 235, and a sixth drill 236. In FIG. 1 and other figures, the shapes of the drills such as the first drill 231 are simplified.

[0015] The NC device 29 controls each part of the machining center 10. The NC device 29 has installed therein a procedure (machining program) of a machining method for forming a hole in the first workpiece 51. The machining program executes a primary chamfering process, a first guide hole forming process, a second guide hole forming process, a first main hole forming process, a pilot hole process, a second main hole forming process, and a secondary chamfering process in this order.

[0016] In the first embodiment, the machining center 10 executes a machining program to form holes for inserting probes in a first hole formation target area group A1 including three or more hole formation target areas in a first workpiece 51. The first workpiece 51 is used, for example, for a test socket used in a semiconductor inspection process.

[0017] As shown in Fig. 2, the first hole formation target region group A1 has a parallel arrangement (square lattice arrangement) of 5 in the x direction and 4 in the y direction, for a total of 20 hole formation target regions. The holes formed in the hole formation target regions have substantially cylindrical inner walls extending in the z direction. In Fig. 2, the numbers inside the circles indicating the hole formation target regions indicate the order in which the hole formation processing is performed in the first guide hole formation process and the second guide hole formation process, and the order in which the hole formation processing is performed in the first main hole formation process and the second main hole formation process.

[0018] The five hole formation target regions arranged in the x direction on the first row (the row at the rear in the y direction) are defined from left to right as the 11th region h11, the 12th region h12, the 13th region h13, the 14th region h14, and the 15th region h15. The five hole formation target regions arranged in the x direction on the second row are defined from left to right in the x direction as the 21st region h21, the 22nd region h22, the 23rd region h23, the 24th region h24, and the 25th region h25. The five hole formation target regions arranged in the x direction on the third row are defined from left to right in the x direction as the 31st region h31, the 32nd region h32, the 33rd region h33, the 34th region h34, and the 35th region h35. The five hole formation target regions arranged in the x direction on the fourth row (the row at the front in the y direction) are defined as the 41st region h41, the 42nd region h42, the 43rd region h43, the 44th region h44, and the 45th region h45 from the left in the x direction.

[0019] In the first column, the 11th region h11, the 21st region h21, the 31st region h31, and the 41st region h41 are arranged in the y direction from the rear side. In the second column, the 12th region h12, the 22nd region h22, the 32nd region h32, and the 42nd region h42 are arranged in the y direction from the rear side. In the third column, the 13th region h13, the 23rd region h23, the 33rd region h33, and the 43rd region h43 are arranged in the y direction from the rear side. In the fourth column, the 14th region h14, the 24th region h24, the 34th region h34, and the 44th region h44 are arranged in the y direction from the rear side. In the fifth column, the 15th region h15, the 25th region h25, the 35th region h35, and the 45th region h45 are arranged in the y direction from the rear side.

[0020] (1st Drill 231) The first drill 231 is used to V-chamfer the upper end of the area to be formed with a hole. The V-chamfering process is performed in a primary chamfering process and a secondary chamfering process. In the primary chamfering process, a V-chamfer is formed to a first depth dp1. This primary chamfering process makes it easier to perform subsequent processing using the second drill 232, etc., at an accurate position. In the secondary chamfering process, a V-chamfer is formed to a fourth depth dp4. This secondary chamfering process makes it easier to insert the probe into the hole.

[0021] (2nd Drill 232 to 6th Drill 236) The second drill 232 has a first diameter di1 and is used for drilling a shallow hole of a second depth dp2. The third drill 233 has a second diameter di2 and is used for drilling a shallow hole of a second depth dp2. The fourth drill 234 has a third diameter di3 and is used for drilling a main hole of a third depth dp3. The fifth drill 235 has a third diameter di3 and is used for drilling a main hole of a third depth dp3. The fifth drill 235 differs from the fourth drill 234 in at least one of the point angle, lead angle, and helix angle. The sixth drill 236 has a fourth diameter di4 and is used for drilling a pilot hole of a third depth dp3.

[0022] (Comparison of drill diameters) The second diameter di2 is smaller than the first diameter di1. The third diameter di3 is larger than the first diameter di1. The fourth diameter di4 is larger than the second diameter di2 and smaller than the first diameter di1 (di2 <di4<di1<di3)。

[0023] (Comparison of machining depth) The second depth dp2 is deeper than the first depth dp1. The third depth dp3 is deeper than the second depth dp2. The fourth depth dp4 is deeper than the first depth dp1 and shallower than the second depth dp2 (dp1 <dp4<dp2<dp3)。

[0024] (Primary chamfering process) In the primary chamfering process, V-chamfering is performed on all hole formation target regions. Specifically, the ATC 27 attaches a first drill 231 to the spindle head 21. Using the first drill 231, V-chamfering to a first depth dp1 is performed in the following order: the 11th region h11 to the 15th region h15, the 21st region h21 to the 25th region h25, the 31st region h31 to the 35th region h35, and the 41st region h41 to the 45th region h45 (see FIG. 3). Note that the order of V-chamfering can be changed without any problems.

[0025] (First guide hole formation process) In the first guide hole forming process, shallow holes are drilled in every other hole formation target region. Specifically, the ATC 27 removes the first drill 231 from the spindle head 21 and attaches the second drill 232 to the spindle head 21. The second drill 232 drills shallow holes to a second depth dp2 in the following order: the 11th region h11, the 13th region h13, the 15th region h15, the 22nd region h22, the 24th region h24, the 31st region h31, the 33rd region h33, the 35th region h35, the 42nd region h42, and the 44th region h44 (see FIG. 4). To illustrate the change in shape, the regions formed in the previous process in the 11th region h11 and the 13th region h13 are indicated by dotted lines in FIG. 4.

[0026] (Second guide hole formation process) In the second guide hole forming process, shallow holes are drilled in the hole formation target regions that were not drilled in the first guide hole forming process. Specifically, the ATC 27 removes the second drill 232 from the spindle head 21 and attaches the third drill 233 to the spindle head 21. Using the third drill 233, shallow holes are drilled to a second depth dp2 in the following order: the 12th region h12, the 14th region h14, the 21st region h21, the 23rd region h23, the 25th region h25, the 32nd region h32, the 34th region h34, the 41st region h41, the 43rd region h43, and the 45th region h45 (see FIG. 5). To illustrate the change in shape, the region of the 12th region h12 that was formed in the previous process is indicated by a dotted line in FIG. 5.

[0027] (First hole formation process) In the first main hole forming process, deep holes are drilled in the hole formation target areas where shallow holes were drilled in the first guide hole forming process. Specifically, the ATC 27 removes the third drill 233 from the spindle head 21 and attaches the fourth drill 234 to the spindle head 21. Deep holes to a third depth dp3 are drilled using the fourth drill 234 in the following order: the 11th region h11, the 13th region h13, the 15th region h15, the 22nd region h22, the 24th region h24, the 31st region h31, the 33rd region h33, the 35th region h35, the 42nd region h42, and the 44th region h44 (see FIG. 6). To illustrate the change in shape, the areas formed in the previous process in the 11th region h11 and the 13th region h13 are indicated by dotted lines in FIG. 6.

[0028] (Preparatory hole formation process) In the pilot hole forming process, pilot holes are drilled in the hole formation target areas where shallow holes were drilled in the second guide hole forming process. Specifically, the ATC 27 removes the fourth drill 234 from the spindle head 21 and attaches the sixth drill 236 to the spindle head 21. Using the sixth drill 236, pilot holes are drilled to a third depth dp3 in the following order: the 12th area h12, the 14th area h14, the 21st area h21, the 23rd area h23, the 25th area h25, the 32nd area h32, the 34th area h34, the 41st area h41, the 43rd area h43, and the 45th area h45 (see FIG. 7). To illustrate the change in shape, the area of ​​the 12th area h12 formed in the previous process is indicated by a dotted line in FIG. 7.

[0029] (Second hole formation process) In the second main hole forming process, deep holes are drilled in the hole formation target areas where the pilot holes were drilled in the pilot hole forming process. Specifically, the ATC 27 removes the sixth drill 236 from the spindle head 21 and attaches the fifth drill 235 to the spindle head 21. Deep holes to a third depth dp3 are drilled using the fifth drill 235 in the following order: the twelfth area h12, the fourteenth area h14, the twenty-first area h21, the twenty-third area h23, the twenty-fifth area h25, the thirty-second area h32, the thirty-fourth area h34, the fourteenth area h41, the fourteenth area h43, and the fourteenth area h45 (see FIG. 8). To illustrate the change in shape, the area of ​​the twelfth area h12 formed in the previous process is indicated by a dotted line in FIG. 8.

[0030] (Secondary chamfering process) In the secondary chamfering process, V-chamfering is performed on all areas where holes are to be formed. Specifically, the ATC 27 removes the fifth drill 235 from the spindle head 21 and attaches the first drill 231 to the spindle head 21. Using the first drill 231, V-chamfering to a fourth depth dp4 is performed in the following order: the 11th region h11 to the 15th region h15, the 21st region h21 to the 25th region h25, the 31st region h31 to the 35th region h35, and the 41st region h41 to the 45th region h45 (see FIG. 9). To illustrate the change in shape, the regions formed in the previous process in the 11th region h11 to the 14th region h14 are indicated by dotted lines in FIG. 9.

[0031] (Terminology correspondence) In the first embodiment, the x direction corresponds to the predetermined arrangement direction in the claims, and hole formation processing and the like are performed in the following procedure. The 11th region h11 and the like correspond to the first hole formation target region in the claims.

[0032] For example, if the 11th region h11 is the first hole formation target region in the claims, the 12th region h12 corresponds to the second hole formation target region adjacent to the first hole formation target region in the x-direction, and the 13th region h13 corresponds to the third hole formation target region adjacent to the second hole formation target region in the x-direction.

[0033] In the primary chamfering process, V-chamfering to a first depth dp1 is performed in all hole formation target regions, including the 11th region h11, the 12th region h12, and the 13th region h13. In the first guide hole forming process, shallow holes to a second depth dp2 are performed using the second drill 232 in every other hole formation target region, including the 11th region h11 and the 13th region h13. In the second guide hole forming process, shallow holes to a second depth dp2 are performed using the third drill 233 in every hole formation target region, including the 12th region h12, that was not shallowly drilled in the first guide hole forming process. In the first main hole forming process, deep holes to a third depth dp3 are performed using the fourth drill 234 in every other hole formation target region, including the 11th region h11 and the 13th region h13.

[0034] In the pilot hole forming process, pilot holes of a third depth dp3 are drilled using the sixth drill 236 in the hole formation target region including the twelfth region h12 and in which shallow holes were not drilled in the first guide hole forming process. In the second main hole forming process, deep holes of a third depth dp3 are drilled using the fifth drill 235 in the hole formation target region including the twelfth region h12 and in which shallow holes were not drilled in the first guide hole forming process. In the secondary chamfering process, V-chamfering of a fourth depth dp4 is performed in all hole formation target regions including the eleventh region h11, the twelfth region h12, and the thirteenth region h13.

[0035] Furthermore, for example, if the 12th region h12 is the first hole formation target region in the claims, the 13th region h13 corresponds to the second hole formation target region adjacent to the first hole formation target region in the x-direction, and the 14th region h14 corresponds to the third hole formation target region adjacent to the second hole formation target region in the x-direction.

[0036] In the first embodiment, the y direction corresponds to the predetermined arrangement direction in the claims, and hole formation processing and the like are performed in the following manner. The 11th region h11 and the like correspond to the first hole formation target region in the claims.

[0037] For example, if the 11th region h11 is the first hole formation target region in the claims, the 21st region h21 corresponds to the second hole formation target region adjacent to the first hole formation target region in the y direction, and the 31st region h31 corresponds to the third hole formation target region adjacent to the second hole formation target region in the y direction.

[0038] In the primary chamfering process, V-chamfering to a first depth dp1 is performed in all hole formation target regions, including the 11th region h11, the 21st region h21, and the 31st region h31. In the first guide hole forming process, shallow holes to a second depth dp2 are performed using the second drill 232 in every other hole formation target region, including the 11th region h11 and the 31st region h31. In the second guide hole forming process, shallow holes to a second depth dp2 are performed using the third drill 233 in every hole formation target region, including the 21st region h21, that was not shallowly drilled in the first guide hole forming process. In the first main hole forming process, deep holes to a third depth dp3 are performed using the fourth drill 234 in every other hole formation target region, including the 11th region h11 and the 31st region h31.

[0039] In the pilot hole forming process, pilot holes are drilled to a third depth dp3 using the sixth drill 236 in the hole formation target region including the 21st region h21 and in which shallow holes were not drilled in the first guide hole forming process. In the second main hole forming process, deep holes are drilled to a third depth dp3 using the fifth drill 235 in the hole formation target region including the 21st region h21 and in which shallow holes were not drilled in the first guide hole forming process. In the secondary chamfering process, V-chamfering to a fourth depth dp4 is performed in all hole formation target regions including the 11th region h11, the 21st region h21, and the 31st region h31.

[0040] Furthermore, for example, if the 21st region h21 is the first hole formation target region in the claims, the 31st region h31 corresponds to the second hole formation target region adjacent to the first hole formation target region in the y direction, and the 41st region h41 adjacent to the second hole formation target region in the y direction corresponds to the third hole formation target region.

[0041] (Effect of performing the second guide hole forming process using the third drill 233 with the second diameter di2) By performing shallow hole drilling using the third drill 233 of the second diameter di2 in the second guide hole formation process, hole bending is less likely to occur compared to a form in which shallow hole drilling is performed using a drill with a diameter larger than the second diameter di2, and it becomes easier to perform deep hole drilling using the fifth drill 235 in the subsequent process while maintaining the rod shape extending in the z direction.

[0042] (Effects of Executing the Second Guide Hole Forming Step and the Second Main Hole Forming Step) Compared to forming holes in the first hole formation target region through the third hole formation target region in order, this method is less likely to cause hole bending and less likely to cause the inner walls of the formed holes to collapse. This makes it easier to form desired holes while maintaining a rod shape extending in the z direction. In particular, it is easier to form desired holes even when the distance between adjacent hole formation target regions is about 100 μm.

[0043] (Effect of performing the pilot hole forming step before the second main hole forming step) Compared to a configuration in which the second main hole forming step is performed without forming a pilot hole, the pilot hole forming step and the second main hole forming step can each be performed with a smaller load.

[0044] (Effect of performing a secondary chamfering process) It becomes easy to insert an object to be inserted, such as a probe, into the formed hole.

[0045] (The effect of performing shallow hole drilling on every other hole formation target area arranged in a parallel array) Compared to forming holes one by one in adjacent hole formation target regions, this method is less likely to cause hole bending and less likely to cause the inner walls of the formed holes to collapse, making it easier to form desired holes while maintaining a rod shape extending in the z direction.

[0046] (Application example of arrangement of hole formation target regions, second embodiment) In the first embodiment, a processing procedure for forming holes in a first hole formation target region group A1 including a plurality of hole formation target regions arranged in a parallel array (square lattice array) and adjacent in the x and y directions has been described. This processing procedure for forming holes can also be applied to a processing procedure for forming holes in a second hole formation target region group A2 including a plurality of hole formation target regions arranged in a staggered array and adjacent in a diagonal direction on an xy plane that intersects the x and y directions (see the second embodiment, FIGS. 10 to 17). In the second embodiment, one of the diagonal directions on the xy plane that intersects the x and y directions is defined as the w direction.

[0047] In the second embodiment, the machining center 10 executes a machining program to form holes for inserting probes in a second hole formation target area group A2 including three or more hole formation target areas in a second workpiece (hole formation target object) 52. The second workpiece 52 is used, for example, for a test socket used in a semiconductor inspection process.

[0048] As shown in Fig. 10, the second hole formation target region group A2 has a total of 20 hole formation target regions arranged in a staggered pattern, five in the x direction and four in a zigzag pattern in the y direction. The holes formed in the hole formation target regions have approximately cylindrical inner walls extending in the z direction. In Fig. 10, the numbers inside the circles indicating the hole formation target regions indicate the order in which the hole formation processes are performed in the first guide hole formation process and the second guide hole formation process, and the order in which the hole formation processes are performed in the first main hole formation process and the second main hole formation process.

[0049] The five hole formation target regions arranged in the x direction on the first row (the row at the rear in the y direction) are defined as the 11th region h11, the 12th region h12, the 13th region h13, the 14th region h14, and the 15th region h15 from the left in the x direction. The five hole formation target regions arranged in the x direction on the second row are defined as the 21st region h21, the 22nd region h22, the 23rd region h23, the 24th region h24, and the 25th region h25 from the left in the x direction. The five hole formation target regions arranged in the x direction on the third row are defined as the 31st region h31, the 32nd region h32, the 33rd region h33, the 34th region h34, and the 35th region h35 from the left in the x direction. The five hole formation target regions arranged in the x direction on the fourth row (the row at the front in the y direction) are defined as the 41st region h41, the 42nd region h42, the 43rd region h43, the 44th region h44, and the 45th region h45 from the left in the x direction.

[0050] In the first column, the 11th region h11, the 21st region h21, the 31st region h31, and the 41st region h41 are arranged in a zigzag pattern in the y direction from the rear side in the y direction. In the second column, the 12th region h12, the 22nd region h22, the 32nd region h32, and the 42nd region h42 are arranged in a zigzag pattern in the y direction from the rear side in the y direction. In the third column, the 13th region h13, the 23rd region h23, the 33rd region h33, and the 43rd region h43 are arranged in a zigzag pattern in the y direction from the rear side in the y direction. In the fourth column, the 14th region h14, the 24th region h24, the 34th region h34, and the 44th region h44 are arranged in a zigzag pattern in the y direction from the rear side in the y direction. In the fifth column, a 15th region h15, a 25th region h25, a 35th region h35, and a 45th region h45 are arranged in a zigzag pattern in the y direction from the rear side in the y direction.

[0051] From the left side in the x direction and the rear side in the y direction, the 11th region h11, the 21st region h21, the 32nd region h32, and the 42nd region h42 are arranged in the w direction. From the left side in the x direction and the rear side in the y direction, the 12th region h12, the 22nd region h22, the 33rd region h33, and the 43rd region h43 are arranged in the w direction. From the left side in the x direction and the rear side in the y direction, the 13th region h13, the 23rd region h23, the 34th region h34, and the 44th region h44 are arranged in the w direction. From the left side in the x direction and the rear side in the y direction, the 14th region h14, the 24th region h24, the 35th region h35, and the 45th region h45 are arranged in the w direction. From the left side in the x direction and the rear side in the y direction, the 15th region h15 and the 25th region h25 are arranged in the w direction. From the left side in the x direction and the rear side in the y direction, the 31st region h31 and the 41st region h41 are arranged in the w direction.

[0052] (Primary chamfering process) In the primary chamfering step, V-chamfering is performed on all hole formation target regions. Specifically, the ATC 27 attaches a first drill 231 to the spindle head 21. Using the first drill 231, V-chamfering to a first depth dp1 is performed on the 11th region h11 to the 15th region h15, the 21st region h21 to the 25th region h25, the 31st region h31 to the 35th region h35, and the 41st region h41 to the 45th region h45 in this order (see FIG. 11).

[0053] (First guide hole formation process) In the first guide hole forming process, shallow holes are drilled in every other row of hole formation target regions. Specifically, the ATC 27 removes the first drill 231 from the spindle head 21 and attaches the second drill 232 to the spindle head 21. Shallow holes to a second depth dp2 are drilled using the second drill 232 in the order of the 11th region h11 to the 15th region h15 and the 31st region h31 to the 35th region h35 (see FIG. 12). To illustrate the change in shape, the region of the 11th region h11 formed in the previous process is indicated by a dotted line in FIG. 12.

[0054] (Second guide hole formation process) In the second guide hole forming process, shallow holes are drilled in the hole formation target regions that were not drilled in the first guide hole forming process. Specifically, the ATC 27 removes the second drill 232 from the spindle head 21 and attaches the third drill 233 to the spindle head 21. Shallow holes to the second depth dp2 are drilled using the third drill 233 in the order of the 21st region h21 to the 25th region h25 and the 41st region h41 to the 45th region h45 (see FIG. 13). To illustrate the change in shape, the region of the 21st region h21 that was formed in the previous process is indicated by a dotted line in FIG. 13.

[0055] (First hole formation process) In the first main hole forming process, deep holes are drilled in the hole formation target regions where shallow holes were drilled in the first guide hole forming process. Specifically, the ATC 27 removes the third drill 233 from the spindle head 21 and attaches the fourth drill 234 to the spindle head 21. Deep holes to a third depth dp3 are drilled using the fourth drill 234 in the order of the 11th region h11 to the 15th region h15 and the 31st region h31 to the 35th region h35 (see FIG. 14). To illustrate the change in shape, the region of the 11th region h11 formed in the previous process is indicated by a dotted line in FIG. 14.

[0056] (Preparatory hole formation process) In the pilot hole forming process, pilot holes are drilled in the hole formation target regions where shallow holes were drilled in the second guide hole forming process. Specifically, the ATC 27 removes the fourth drill 234 from the spindle head 21 and attaches a sixth drill 236 to the spindle head 21. Using the sixth drill 236, pilot holes are drilled to a third depth dp3 in the following order: the 21st region h21 to the 25th region h25, and the 41st region h41 to the 45th region h45 (see FIG. 15). To illustrate the change in shape, the region of the 21st region h21 that was formed in the previous process is indicated by a dotted line in FIG. 15.

[0057] (Second hole formation process) In the second main hole forming process, deep holes are drilled in the hole formation target areas where pilot holes were drilled in the pilot hole forming process. Specifically, the ATC 27 removes the sixth drill 236 from the spindle head 21 and attaches the fifth drill 235 to the spindle head 21. Deep holes to a third depth dp3 are drilled using the fifth drill 235 in the order of the twenty-first area h21 to the twenty-fifth area h25, and the forty-first area h41 to the forty-fifth area h45 (see FIG. 16). To illustrate the change in shape, the area of ​​the twenty-first area h21 formed in the previous process is indicated by a dotted line in FIG. 16.

[0058] (Secondary chamfering process) In the secondary chamfering process, V-chamfering is performed on all hole formation target regions. Specifically, the ATC 27 removes the fifth drill 235 from the spindle head 21 and attaches the first drill 231 to the spindle head 21. Using the first drill 231, V-chamfering to the fourth depth dp4 is performed in the following order: the 11th region h11 to the 15th region h15, the 21st region h21 to the 25th region h25, the 31st region h31 to the 35th region h35, and the 41st region h41 to the 45th region h45 (see FIG. 17). To illustrate the change in shape, the regions formed in the previous process in the 11th region h11, the 21st region h21, and the 32nd region h32 are indicated by dotted lines in FIG. 17.

[0059] (Terminology correspondence) In the second embodiment, the w direction corresponds to the predetermined arrangement direction in the claims, and hole formation processing and the like are performed in the following procedure. The 11th region h11 and the like correspond to the first hole formation target region in the claims.

[0060] For example, if the 11th region h11 is the first hole formation target region in the claims, the 21st region h21 corresponds to the second hole formation target region adjacent to the first hole formation target region in the w direction, and the 32nd region h32 corresponds to the third hole formation target region adjacent to the second hole formation target region in the w direction.

[0061] In the primary chamfering process, V-chamfering to a first depth dp1 is performed in all hole formation target regions, including the 11th region h11, the 21st region h21, and the 32nd region h32. In the first guide hole forming process, shallow holes to a second depth dp2 are drilled using the second drill 232 in every other row of hole formation target regions, including the 11th region h11 and the 32nd region h32. In the second guide hole forming process, shallow holes to a second depth dp2 are drilled using the third drill 233 in every other row of hole formation target regions, including the 21st region h21, that were not shallowly drilled in the first guide hole forming process. In the first main hole forming process, deep holes to a third depth dp3 are drilled using the fourth drill 234 in every other row of hole formation target regions, including the 11th region h11 and the 32nd region h32.

[0062] In the pilot hole forming process, pilot holes are drilled to a third depth dp3 using the sixth drill 236 in the hole formation target region including the 21st region h21 and in which shallow holes were not drilled in the first guide hole forming process. In the second main hole forming process, deep holes are drilled to a third depth dp3 using the fifth drill 235 in the hole formation target region including the 21st region h21 and in which shallow holes were not drilled in the first guide hole forming process. In the secondary chamfering process, V-chamfering to a fourth depth dp4 is performed in all hole formation target regions including the 11th region h11, the 21st region h21, and the 32nd region h32.

[0063] Furthermore, for example, if the 21st region h21 is the first hole formation target region in the claims of the patent, the 32nd region h32 corresponds to the second hole formation target region adjacent to the first hole formation target region in the w direction, and the 42nd region h42 corresponds to the third hole formation target region adjacent to the second hole formation target region in the w direction.

[0064] (The effect of performing shallow hole drilling on every other row of multiple hole formation target areas arranged in a staggered pattern) Compared to forming holes in rows in adjacent hole formation target regions, this method is less likely to cause hole bending and less likely to cause the inner walls of the formed holes to collapse, making it easier to form desired holes while maintaining a rod shape extending in the z direction.

[0065] (Application example of pilot hole formation process) In the first and second embodiments, an example was described in which the pilot hole forming step was performed after the first main hole forming step and before the second main hole forming step. However, if the distance between adjacent regions is wide, the pilot hole forming step may be omitted and the second main hole forming step may be performed immediately after the first main hole forming step.

[0066] (Example of application of secondary chamfering process) In the first and second embodiments, an example was described in which the secondary chamfering process was performed after the second main hole forming process. However, in cases where the V-shaped surface formed in the primary chamfering process remains in the hole formation target area, the secondary chamfering process may be omitted and the machining program may be terminated immediately after the second main hole forming process.

[0067] (Application example of deep hole drilling) In the first and second embodiments, examples have been described in which the first main hole forming process, pilot hole forming process, and second main hole forming process involve deep hole machining that does not penetrate the underside of the object to be formed (first workpiece 51, second workpiece 52). However, in the first main hole forming step, the pilot hole forming step, and the second main hole forming step, through holes may be formed that penetrate the lower surface of the hole formation object.

[0068] (Application examples of hole formation target areas and hole formation area groups) In the first embodiment, an example was described in which the first hole formation target area group A1 had 20 hole formation target areas. In the second embodiment, an example was described in which the second hole formation target area group A2 had 20 hole formation target areas. However, the number of holes formed in one hole formation target area group is not limited to 20. Furthermore, multiple hole formation target area groups may be formed in the hole formation target object (first workpiece 51, second workpiece 52).

[0069] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are intended to be included within the scope and spirit of the invention, as well as within the scope of the invention described in the claims and their equivalents.

[0070] According to the present specification, there is provided a processing method having the following aspects. (Aspect 1) Aspect 1 is a processing method for forming holes in three or more hole formation target regions in a hole formation target object including the three or more hole formation target regions, wherein the three or more hole formation target regions include at least a first hole formation target region, a second hole formation target region, and a third hole formation target region; The first hole formation target region, the second hole formation target region, and the third hole formation target region are arranged adjacent to each other in a predetermined arrangement direction, and the second hole formation target region is disposed between the first hole formation target region and the third hole formation target region, and the processing method forms holes in each of the hole formation target regions, the processing method including a primary chamfering step of performing V-chamfering of a first depth on the first hole formation target region, the second hole formation target region, and the third hole formation target region using a first drill, and a secondary chamfering step of performing V-chamfering of the first depth on the first hole formation target region and the third hole formation target region using a second drill of a first diameter. a second guide hole forming process for drilling a shallow hole of the second depth in the second hole formation target area using a third drill of a second diameter smaller than the first diameter; a first main hole forming process for drilling a deep hole or through hole of a third depth deeper than the second depth in the first hole formation target area and the third hole formation target area using a fourth drill of a third diameter larger than the first diameter; and a second main hole forming process for drilling a deep hole or through hole of the third depth in the second hole formation target area using a fifth drill of the third diameter.

[0071] According to the above-described embodiment, by performing shallow hole drilling using a third drill of the second diameter in the second guide hole forming step, hole bending is less likely to occur compared to a mode in which shallow hole drilling is performed using a drill with a diameter larger than the second diameter, and it is easier to drill a deep hole or through hole using a fifth drill in the subsequent step while maintaining the rod shape. Compared to a mode in which holes are formed in the first hole formation target region through the third hole formation target region in order, hole bending is less likely to occur and the inner wall of the formed hole is less likely to collapse. Therefore, it is easier to form the desired hole while maintaining the rod shape.

[0072] (Aspect 2) In aspect 2, the processing method further includes a pilot hole forming step, which is performed after the first main hole forming step and before the second main hole forming step, in which a deep hole or through hole of the third depth is drilled in the second hole formation target area using a sixth drill with a fourth diameter smaller than the first diameter and larger than the second diameter.

[0073] According to the above-described embodiment, the pilot hole forming step and the second main hole forming step can each be performed with a smaller load than in an embodiment in which the second main hole forming step is performed without forming pilot holes.

[0074] (Aspect 3) In aspect 3, the processing method further includes a secondary chamfering process, after the second main hole forming process, in which the first drill is used to perform V-chamfering to a fourth depth, which is deeper than the first depth and shallower than the second depth, in the first hole forming target area, the second hole forming target area, and the third hole forming target area.

[0075] According to the above aspect, it becomes easy to insert an insertion object such as a probe into the formed hole.

[0076] (Aspect 4) In aspect 4, the hole formation object includes a plurality of hole formation target regions arranged in a parallel array as the three or more hole formation target regions, and in the first guide hole formation process, the shallow hole drilling is performed using the second drill in every other hole formation target region among the plurality of hole formation target regions, and the every other hole formation target region includes the first hole formation target region and the third hole formation target region, and in the second guide hole formation process, the shallow hole drilling is performed using the third drill in every hole formation target region among the plurality of hole formation target regions that was not subjected to the shallow hole drilling in the first guide hole formation process, and the hole formation target region that was not subjected to the shallow hole drilling in the first guide hole formation process includes the second hole formation target region.

[0077] According to the above-described embodiment, compared to a configuration in which holes are formed one by one in adjacent hole formation target regions, the holes are less likely to bend and the inner walls of the formed holes are less likely to collapse, making it easier to form desired holes while maintaining the rod shape.

[0078] (Aspect 5) In aspect 5, the hole formation object includes a plurality of hole formation target areas arranged in a staggered arrangement as the three or more hole formation target areas, and in the first guide hole formation process, shallow hole drilling is performed using the second drill in every other row of the plurality of hole formation target areas, and the every other row of hole formation target areas includes the first hole formation target area and the third hole formation target area, and in the second guide hole formation process, shallow hole drilling is performed using the third drill in every other row of the plurality of hole formation target areas that was not subjected to shallow hole drilling in the first guide hole formation process, and the hole formation target area that was not subjected to shallow hole drilling in the first guide hole formation process includes the second hole formation target area.

[0079] According to the above-described embodiment, compared to a configuration in which holes are formed in rows in adjacent hole formation target regions, the holes are less likely to bend and the inner walls of the formed holes are less likely to collapse, making it easier to form desired holes while maintaining a rod shape extending in the z direction.

[0080] According to the present specification, the following machining program is provided. (Aspect 6) In a sixth aspect, a machining program is installed in an NC device of a machining center and is configured to form holes in each of three or more hole formation target areas in a hole formation target object including three or more hole formation target areas, the three or more hole formation target areas including at least a first hole formation target area, a second hole formation target area, and a third hole formation target area, the first hole formation target area, the second hole formation target area, and the third hole formation target area being arranged adjacent to each other in a predetermined arrangement direction, the second hole formation target area being disposed between the first hole formation target area and the third hole formation target area, and the machining program is configured to form holes in each of the hole formation target areas, the machining program being configured to form holes in the first hole formation target area, the second hole formation target area, and the third hole formation target area. The method includes a primary chamfering process in which a V-chamfer is performed to a first depth using a drill; a first guide hole forming process in which a shallow hole is drilled to a second depth deeper than the first depth in the first hole formation target area and the third hole formation target area using a second drill of a first diameter; a second guide hole forming process in which a shallow hole is drilled to the second depth using a third drill of a second diameter smaller than the first diameter in the second hole formation target area; a first main hole forming process in which a deep hole or through hole is drilled to a third depth deeper than the second depth in the first hole formation target area and the third hole formation target area using a fourth drill of a third diameter larger than the first diameter; and a second main hole forming process in which a deep hole or through hole is drilled to the third depth using a fifth drill of the third diameter in the second hole formation target area.

[0081] According to the above-described embodiment, by performing shallow hole drilling using a third drill of the second diameter in the second guide hole forming step, hole bending is less likely to occur compared to a mode in which shallow hole drilling is performed using a drill with a diameter larger than the second diameter, and it is easier to drill a deep hole or through hole using a fifth drill in the subsequent step while maintaining the rod shape. Compared to a mode in which holes are formed in the first hole formation target region through the third hole formation target region in order, hole bending is less likely to occur and the inner wall of the formed hole is less likely to collapse. Therefore, it is easier to form the desired hole while maintaining the rod shape. [Explanation of symbols]

[0082] 10 Machining Center 231 First drill (V chamfer drill) 232 No. 2 Drill (No. 1 Shallow Hole Drill) 233 Third drill (Second shallow hole drill) 234 4th Drill (1st Main Drill) 235 5th drill (2nd main hole drill) 236 No. 6 drill (pre-hole drill) 29 NC unit (numerical control device) di1~di4 1st diameter~4th diameter dp1~dp4 1st depth~4th depth

Claims

1. A processing method for forming holes in each of three or more hole formation target regions in a hole formation target object including three or more hole formation target regions, comprising: the three or more hole formation target regions include at least a first hole formation target region, a second hole formation target region, and a third hole formation target region; the first hole formation target region, the second hole formation target region, and the third hole formation target region are arranged adjacent to each other in a predetermined arrangement direction, the second hole formation target region is disposed between the first hole formation target region and the third hole formation target region, a processing method for forming holes in each of the hole formation target regions, a primary chamfering process of performing V-chamfering of a first depth on the first hole formation target area, the second hole formation target area, and the third hole formation target area using a first drill; a first guide hole forming step of drilling shallow holes having a second depth deeper than the first depth in the first hole formation target region and the third hole formation target region using a second drill having a first diameter; a second guide hole forming step of drilling a shallow hole of the second depth in the second hole formation target region using a third drill having a second diameter smaller than the first diameter; a first main hole forming step of drilling a deep hole or a through hole having a third depth deeper than the second depth in the first hole formation target region and the third hole formation target region using a fourth drill having a third diameter larger than the first diameter; a second main hole forming step of drilling a deep hole or through hole of the third depth in the second hole forming target area using a fifth drill of the third diameter.

2. 2. The processing method according to claim 1, further comprising a pilot hole forming step, after the first main hole forming step and before the second main hole forming step, of drilling a deep hole or through hole of the third depth in the second hole formation target area using a sixth drill having a fourth diameter smaller than the first diameter and larger than the second diameter.

3. 3. The processing method according to claim 1 or claim 2, further comprising a secondary chamfering process, after the second main hole forming process, in which the first drill is used to perform V-chamfering to a fourth depth that is deeper than the first depth and shallower than the second depth in the first hole forming target area, the second hole forming target area, and the third hole forming target area.

4. the hole formation target object includes a plurality of hole formation target regions arranged in a parallel array as the three or more hole formation target regions, In the first guide hole forming step, the shallow hole drilling is performed using the second drill in every other hole formation target region among the plurality of hole formation target regions, the every other hole formation target region includes the first hole formation target region and the third hole formation target region, In the second guide hole forming step, the shallow hole drilling is performed using the third drill in a hole formation target region among the plurality of hole formation target regions that has not been subjected to the shallow hole drilling in the first guide hole forming step, The processing method according to claim 1 , wherein the hole formation target region in which the shallow hole processing has not been performed in the first guide hole forming step includes the second hole formation target region.

5. the hole formation target object includes a plurality of hole formation target regions arranged in a staggered arrangement as the three or more hole formation target regions, In the first guide hole forming step, the shallow hole drilling is performed using the second drill in every other row of hole formation target regions among the plurality of hole formation target regions, the every other row hole formation target regions include the first hole formation target region and the third hole formation target region, In the second guide hole forming step, the shallow hole drilling is performed using the third drill in a hole formation target region among the plurality of hole formation target regions that has not been subjected to the shallow hole drilling in the first guide hole forming step, The processing method according to claim 1 , wherein the hole formation target region in which the shallow hole processing has not been performed in the first guide hole forming step includes the second hole formation target region.

6. A machining program installed in an NC device of a machining center, for forming holes in each of three or more hole formation target areas in a hole formation target object including three or more hole formation target areas, the three or more hole formation target regions include at least a first hole formation target region, a second hole formation target region, and a third hole formation target region; the first hole formation target region, the second hole formation target region, and the third hole formation target region are arranged adjacent to each other in a predetermined arrangement direction, the second hole formation target region is disposed between the first hole formation target region and the third hole formation target region, and a machining program for forming holes in each of the hole formation target regions is provided; a primary chamfering process of performing V-chamfering of a first depth on the first hole formation target area, the second hole formation target area, and the third hole formation target area using a first drill; a first guide hole forming step of drilling shallow holes having a second depth deeper than the first depth in the first hole formation target region and the third hole formation target region using a second drill having a first diameter; a second guide hole forming step of drilling a shallow hole of the second depth in the second hole formation target region using a third drill having a second diameter smaller than the first diameter; a first main hole forming step of drilling a deep hole or a through hole having a third depth deeper than the second depth in the first hole formation target region and the third hole formation target region using a fourth drill having a third diameter larger than the first diameter; a second main hole forming process for drilling a deep hole or through hole of the third depth in the second hole forming target area using a fifth drill of the third diameter.

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