Electron source, electron device, and electron emission method

Abstract

To provide an electron source, an electron device, and an electron emission method that can improve characteristics.SOLUTION: According to an embodiment, an electron source includes a first member, a first light-emitting unit, and a second light-emitting unit. The first member includes a first region including InxAlyGa1-x-yN (0≤x≤1, 0≤y≤1, x+y≤1) and a second region including diamond. The first light-emitting unit is configured to emit first light having a first peak wavelength into the first member. The second light-emitting unit is configured to emit second light having a second peak wavelength shorter than the first peak wavelength into the first member.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD OF THE INVENTION Embodiments of the present invention relate to electron sources, electron devices, and electron emission methods. [Background technology]

[0002] For example, electrons emitted from an electron source are used in various electronic devices, and it is desirable to improve the characteristics of the electron source. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 3762535 Summary of the Invention [Problem to be solved by the invention]

[0004] SUMMARY OF THE INVENTION Embodiments of the present invention provide an electron source, an electron device, and an electron emission method that can improve performance. [Means for solving the problem]

[0005] According to an embodiment of the present invention, an electron source includes a first member, a first light-emitting portion, and a second light-emitting portion. x Al y Ga 1-x-y N (0≦x≦1, 0≦y≦1, x+y≦1), and a second region including diamond. The first light-emitting unit is configured to emit first light having a first peak wavelength into the first member. The second light-emitting unit is configured to emit second light having a second peak wavelength shorter than the first peak wavelength into the first member. [Brief explanation of the drawings]

[0006] [Figure 1] FIG. 1 is a schematic cross-sectional view illustrating the electron source according to the first embodiment. [Figure 2]FIG. 2 is a schematic cross-sectional view illustrating a part of the electron source according to the first embodiment. [Figure 3] FIG. 3 is a schematic cross-sectional view illustrating a part of the electron source according to the first embodiment. [Figure 4] FIG. 4 is a schematic cross-sectional view illustrating a part of the electron source according to the first embodiment. [Figure 5] FIG. 5 is a schematic view illustrating the electron source according to the first embodiment. [Figure 6] FIG. 6 is a schematic cross-sectional view illustrating the electron source according to the first embodiment. [Figure 7] FIG. 7 is a schematic cross-sectional view illustrating the electron source according to the first embodiment. [Figure 8] FIG. 8 is a schematic cross-sectional view illustrating the electron source according to the first embodiment. [Figure 9] FIG. 9 is a schematic view illustrating an electronic device according to the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios may be different depending on the drawing. In this specification and in each drawing, elements similar to those previously described with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions thereof will be omitted where appropriate.

[0008] (First embodiment)

[0009] FIG. 1 is a schematic cross-sectional view illustrating the electron source according to the first embodiment. FIG. 2 is a schematic cross-sectional view illustrating a part of the electron source according to the first embodiment. FIG. 1 corresponds to a cross-sectional view taken along line A1-A2 in FIG.

[0010] 1, an electron source 110 according to the embodiment includes a first member 30, a first light-emitting unit 10, and a second light-emitting unit 20. FIG.

[0011] 1, the first member 30 includes a first region 31 and a second region 32. The first region 31 includes, for example, a nitride. The nitride may include Ga. In one example, the first region 31 includes In. x Al y Ga 1-x-y N (0≦x≦1, 0≦y≦1, x+y≦1). The first region 31 may, for example, include a crystal.

[0012] The second region 32 includes diamond.

[0013] The first light-emitting unit 10 is configured to emit first light L1 having a first peak wavelength into the first member 30. The second light-emitting unit 20 is configured to emit second light L2 having a second peak wavelength into the first member 30. The second peak wavelength is shorter than the first peak wavelength.

[0014] In one example, the second light L2 includes, for example, ultraviolet light or blue light, and the first light L1 includes, for example, yellow light or red light.

[0015] In the electron source 110, the first light L1 and the second light L2 are incident on the first member 30. As a result, electrons 81 are emitted from the second region 32 with high efficiency. For example, at least a portion of the light is absorbed in the first region 31, generating mobile electrons 81. The electrons 81 move from the first region 31 to the second region 32 and are emitted from the second region 32 into external space. Highly efficient electron emission is achieved. According to the embodiment, an electron source with improved characteristics can be provided.

[0016] For example, in the electron source of the first reference example, a material such as cesium is used as the electron emission material. In this case, high efficiency is easily obtained. However, in the first reference example, the lifetime is short.

[0017] In contrast, in the embodiment, stable diamond is used, which provides stable high efficiency and a long life.

[0018] In the second reference example, a diamond layer is used as the electron emission layer. In the second reference example, the first region 31 is not provided. In such a second reference example, very high energy is required to emit electrons from the diamond. For example, a method using deep ultraviolet light is conceivable, but it is practically difficult to obtain deep ultraviolet light stably with high efficiency. In deep ultraviolet light, the wavelength is, for example, less than 230 nm.

[0019] In the embodiment, a first region 31 containing nitride is provided in addition to a second region 32 containing diamond. The first region 31 assists, for example, the second region 32. In the embodiment, electrons can be emitted from the second region 32 with high efficiency without using deep ultraviolet light. In the embodiment, ultraviolet light (or light) with a wavelength of 230 nm or more may be used.

[0020] In this embodiment, two lights (first light L1 and second light L2) with different wavelengths are used. For example, the second light L2 causes photoelectric conversion in the first region 31, generating mobile electrons. The first light L1 causes the electrons in the first region 31 to move from the first region 31 to the second region 32 with high efficiency. The electrons are emitted from the surface of the second region 32 to the outside.

[0021] In the embodiment, the first region 31 functions as, for example, a light absorbing region, and the second region 32 functions as an electron emitting region.

[0022] In the embodiment, the first peak wavelength may be, for example, 450 nm or more and 1000 nm or less, and the second peak wavelength may be, for example, 230 nm or more and 450 nm or less.

[0023] 1, the second light-emitting unit 20 is provided between the first light-emitting unit 10 and the second region 32 in the first direction D1. The first region 31 is provided between the second light-emitting unit 20 and the second region 32 in the first direction D1.

[0024] The first direction D1 is defined as the Z-axis direction. One direction perpendicular to the Z-axis direction is defined as the X-axis direction. The direction perpendicular to the Z-axis direction and the X-axis direction is defined as the Y-axis direction.

[0025] The first region 31 is, for example, a layer along the XY plane. The second region 32 does not have to be a continuous film. The second region 32 may be island-shaped or mesh-shaped.

[0026] 1, the long-wavelength first light L1 passes through the second light-emitting unit 20 and is incident on the first member 30. In the embodiment, the first light L1 may be incident on the first member 30 without passing through the second light-emitting unit 20.

[0027] The first light L1 has a first peak wavelength longer than the second peak wavelength of the second light L2. The first light L1 may reach the second region 32 with, for example, a small degree of attenuation. At least a portion of the first light L1 may pass through the first region 31 with high efficiency. High efficiency is obtained.

[0028] For example, the first light-emitting section 10 and the second light-emitting section 20 may be arranged side by side in the XY plane.

[0029] 1, the first light-emitting unit 10 may include a plurality of light-emitting regions 11. The plurality of light-emitting regions 11 are configured to emit a first light L1. The plurality of light-emitting regions 11 may be connected to, for example, a first base 15. At least some of the plurality of light-emitting regions 11 may be aligned along a second direction D2 intersecting the first direction D1. The second direction D2 may be, for example, the X-axis direction.

[0030] 2, the light-emitting regions 11 may be arranged two-dimensionally along a first plane PL1 that intersects with the first direction D1. The light-emitting regions 11 may be arranged, for example, along a second direction D2 and a third direction D3. The third direction D3 may intersect, for example, with a plane that includes the first direction D1 and the second direction D2. The third direction D3 may be, for example, the Y-axis direction. The third direction D3 may be inclined with respect to the second direction D2.

[0031] At least some of the light-emitting regions 11 may include lasers. For example, at least some of the light-emitting regions 11 may include surface-emitting lasers. The surface-emitting laser may include, for example, a VCSEL (Vertical Cavity Surface Emitting Laser). This allows the first light L1 to be obtained with high intensity and a small luminous flux. Electrons can be emitted from a desired location with high efficiency.

[0032] For example, the first member 30 may include a plurality of partial regions 30x. One of the plurality of partial regions 30x overlaps one of the plurality of light-emitting regions 11. Electrons 81 are emitted from each of the plurality of partial regions 30x in correspondence with the plurality of light-emitting regions 11.

[0033] For example, the first member 30 includes a first partial region 30a and a second partial region 30b. The plurality of light-emitting regions 11 include a first light-emitting region 11a and a second light-emitting region 11b. The first partial region 30a overlaps with the first light-emitting region 11a in the first direction D1. The second partial region 30b overlaps with the second light-emitting region 11b in the first direction D1.

[0034] For example, in the first operation, the first light L1 is emitted from the first light-emitting region 11a, and the electrons 81 are emitted from the first partial region 30a. In the second operation, the first light L1 is emitted from the second light-emitting region 11b, and the electrons 81 are emitted from the second partial region 30b.

[0035] For example, in the first operation, the first light L1 may not be emitted from the second light-emitting region 11b, and electrons 81 may not be emitted from the second partial region 30b. In the second operation, the first light L1 may not be emitted from the first light-emitting region 11a, and electrons 81 may not be emitted from the first partial region 30a. The first light L1 may be selectively emitted from one of the plurality of light-emitting regions 11.

[0036] The first light L1 may be emitted from at least two of the plurality of light emitting regions 11 simultaneously.

[0037] As shown in FIG. 1 , the second light emitting unit 20 may include a first semiconductor layer 21, a second semiconductor layer 22, and a light emitting layer 23. The first semiconductor layer 21 is of a first conductivity type. The second semiconductor layer 22 is of a second conductivity type. The second semiconductor layer 22 is provided between the first semiconductor layer 21 and the first member 30. The light emitting layer 23 is provided between the first semiconductor layer 21 and the second semiconductor layer 22. The first conductivity type is, for example, one of n-type and p-type. The second conductivity type is the other of n-type and p-type.

[0038] For example, the light emitting layer 23 may include a plurality of barrier layers 23a and well layers 23b provided between the plurality of barrier layers 23a.

[0039] The first semiconductor layer 21 contains, for example, Ga and N. The first semiconductor layer 21 may further contain Si. The second semiconductor layer 22 contains, for example, Ga and N. The second semiconductor layer 22 may further contain Mg. The barrier layer 23a contains, for example, Al, Ga, and N. The barrier layer 23a contains, for example, In, Ga, and N. The compositions of these layers can be modified in various ways. The second light-emitting unit 20 may be, for example, an LED. The second light-emitting unit 20 may include, for example, a second base 25. The first semiconductor layer 21 is provided between the second base 25 and the second semiconductor layer 22. The second base 25 may be, for example, a substrate (e.g., a sapphire substrate, etc.).

[0040] As shown in FIG. 1, the second region 32 may be adjacent to the first region 31 .

[0041] FIG. 3 is a schematic cross-sectional view illustrating a part of the electron source according to the first embodiment. FIG. 3 illustrates the first member 30. As shown in FIG. 3, the second region 32 may include a surface region 32a and a non-surface region 32b. The non-surface region 32b is provided between the first region 31 and the surface region 32a. The surface region 32a contains carbon and hydrogen. The non-surface region 32b does not contain hydrogen. Alternatively, the hydrogen concentration in the non-surface region 32b is lower than the hydrogen concentration in the surface region 32a. The surface region 32a is a hydrogen-terminated region. This allows for more stable and efficient electron emission. For example, the surface region 32a contains carbon and hydrogen bonds.

[0042] FIG. 4 is a schematic cross-sectional view illustrating a part of the electron source according to the first embodiment. 4 illustrates the first member 30. As shown in FIG. 4, the second region 32 may be island-shaped or mesh-shaped. For example, a large surface area can be obtained in the second region 32. This allows for more efficient electron emission.

[0043] In an embodiment, the second region 32 may include at least one selected from the group consisting of boron and aluminum. The second region 32 may include, for example, p-type diamond. Higher efficiency is obtained.

[0044] 1, the second thickness t2 of the second region 32 is preferably thinner than the first thickness t1 of the first region 31. A thinner second region 32 makes it easier to obtain electron emission with higher efficiency.

[0045] In one example, the second thickness t2 is less than 10 nm, and the first thickness t1 is equal to or greater than 10 nm and equal to or less than 100 nm.

[0046] For example, the first thickness t1 may be 5 nm or more and 100 nm or less, or 10 nm or more and 50 nm or less.

[0047] For example, the second thickness t2 (average value) may be 0.05 nm or more and 30 nm or less, and the second thickness t2 (average value) may be 0.05 nm or more and 5 nm or less.

[0048] FIG. 5 is a schematic view illustrating the electron source according to the first embodiment. 5 illustrates an energy state in the first member 30. As shown in FIG. 5, the first member 30 includes a first region 31 and a second region 32. As already described, the first light-emitting unit 10 is configured to cause first light L1 having a first peak wavelength to be incident on the first member 30. The second light-emitting unit 20 is configured to cause second light L2 having a second peak wavelength shorter than the first peak wavelength to be incident on the first member 30.

[0049] 5, the second conduction band energy Ec2 of the second region 32 is higher than the first conduction band energy Ec1 of the first region 31. The difference between the second conduction band energy Ec2 and the first conduction band energy Ec1 is defined as a difference ΔEc. The difference ΔEc corresponds to the barrier difference.

[0050] The first energy hν1 of the first light L1 is greater than the absolute value of the difference ΔEc between the second conduction band energy Ec2 and the first conduction band energy Ec1. The second energy hν2 of the second light L2 is greater than the band gap energy Eg1 of the first region 31.

[0051] For example, electrons 81 are obtained in the first region 31 by the second light L2 having a second energy hν2 larger than the band gap energy Eg1 of the first region 31. For example, the electrons 81 move beyond the barrier to the second region 32 by the first light L1 having a first energy hν1 larger than the absolute value of the difference ΔEc (barrier difference). The electrons 81 are emitted from the surface of the second region 32 to the outside. In FIG. 5, for example, the electrons 81 are emitted toward the vacuum level Ev. According to the embodiment, electron emission can be achieved with high efficiency.

[0052] For example, the second energy hν2 is greater than the first energy hν1.

[0053] For example, carriers are excited by the second light L2. Electron emission is promoted by the first light L1. The first light emitting unit 10 that emits the first light L1 may include, for example, a visible light VCSEL. For example, a highly convergent electron beam can be obtained. An electron beam with a small energy dispersion can be obtained. For example, a highly efficient electron beam can be obtained. A long lifetime can be obtained. At least a portion of the two light emitting units does not need to be provided inside a reduced pressure vessel. A simple structure can be obtained. According to the embodiment, an electron source capable of improving characteristics is provided.

[0054] 6 to 8 are schematic cross-sectional views illustrating the electron source according to the first embodiment. 6 to 8, the electron sources 111 to 113 according to the embodiment include a container 60. Except for this, the configuration of the electron sources 111 to 113 may be similar to the configuration of the electron source 110 and its modifications.

[0055] In the electron source 111, the first member 30 is provided in a container 60. The pressure inside the container 60 is lower than 1 atmosphere. At least one of the second light-emitting unit 20 and the first light-emitting unit 10 may be provided inside the container 60.

[0056] 7, in an electron source 112 according to the embodiment, the second light-emitting unit 20 is provided inside a container 60. The first light-emitting unit 10 is provided outside the container 60. As shown in FIG. 8, in an electron source 113 according to the embodiment, the second light-emitting unit 20 and the first light-emitting unit 10 are provided outside the container 60.

[0057] (Second embodiment) FIG. 9 is a schematic view illustrating an electronic device according to the second embodiment. 9, an electronic device 120 according to the embodiment includes the electron source according to the first embodiment (in this example, the electron source 111) and a control circuit 70. The control circuit 70 is configured to control the electron source (in this example, the electron source 111).

[0058] The electronic device 120 may include, for example, at least one selected from the group consisting of a sensor, a switching device, an electron beam writing device, a processing device, and an analytical device. An electronic device capable of improving its characteristics is provided. The sensor may include, for example, an optical sensor. The analytical device may include, for example, an electron microscope.

[0059] (Third embodiment) The third embodiment relates to an electron emission method. The electron emission method includes, for example, irradiating a first light L1 and a second light L2 onto a first member 30 including a first region 31 and a second region 32, thereby emitting electrons from the first member 30. The first region 31 is, for example, In x Al y Ga 1-x-y N (0≦x≦1, 0≦y≦1, x+y≦1). The second region 32 includes diamond. The first light L1 has a first peak wavelength. The second light L2 has a second peak wavelength that is shorter than the first peak wavelength. According to the embodiment, highly efficient electron emission can be obtained. In the third embodiment, the configuration described in relation to the first embodiment can be applied. An electron emission method capable of improving characteristics is provided.

[0060] The electron emission method includes, for example, irradiating a first light L1 and a second light L2 onto a first member 30 including a first region 31 and a second region 32 to emit electrons from the first member 30. The first light L1 has a first peak wavelength. The second light L2 has a second peak wavelength shorter than the first peak wavelength. The second conduction band energy Ec2 of the second region 32 is higher than the first conduction band energy Ec1 of the first region 31. The first energy hv1 of the first light L1 is larger than the absolute value of the difference ΔEc between the second conduction band energy Ec2 and the first conduction band energy Ec1. The second energy hv2 of the second light L2 is larger than the band gap energy Eg1 of the first region 31. An electron emission method capable of improving characteristics is provided.

[0061] Information about the length and thickness can be obtained by electron microscopy, etc. Information about the composition of the material can be obtained by SIMS (Secondary Ion Mass Spectrometry), TEM (Transmission Electron Spectroscopy), or EDX (Energy Dispersive X-ray spectroscopy), etc. Based on the information about the composition of the material, information about the energy of the material can be obtained.

[0062] The embodiments may include the following technical solutions. (Technical proposal 1) In x Al y Ga 1-x-y a first member including a first region including N(0≦x≦1, 0≦y≦1, x+y≦1) and a second region including diamond; a first light emitting unit configured to emit first light having a first peak wavelength into the first member; a second light emitting unit configured to emit second light having a second peak wavelength shorter than the first peak wavelength into the first member; An electron source comprising:

[0063] (Technical proposal 2) the first peak wavelength is 450 nm or more and 1000 nm or less, The electron source according to Technical Solution 1, wherein the second peak wavelength is greater than or equal to 230 nm and less than or equal to 450 nm.

[0064] (Technical proposal 3) the second light-emitting portion is provided between the first light-emitting portion and the second region in a first direction; The electron source according to Technical Solution 1 or 2, wherein the first region is provided between the second light-emitting portion and the second region in the first direction.

[0065] (Technical proposal 4) the first light-emitting unit includes a plurality of light-emitting regions configured to emit the first light; The electron source according to Technical Solution 3, wherein at least some of the plurality of light-emitting regions are aligned along a second direction intersecting the first direction.

[0066] (Technical proposal 5) the first light-emitting unit includes a plurality of light-emitting regions configured to emit the first light; The electron source described in Technical Solution 3, wherein the plurality of light-emitting regions are arranged two-dimensionally along a first plane that intersects with the first direction.

[0067] (Technical proposal 6) The electron source according to Technical Solution 4 or 5, wherein at least some of the plurality of light-emitting regions include surface-emitting lasers.

[0068] (Technical proposal 7) the first member includes a first partial region and a second partial region; the plurality of light-emitting regions include a first light-emitting region and a second light-emitting region, the first partial region overlaps with the first light-emitting region in the first direction, the second partial region overlaps with the second light-emitting region in the first direction, In a first operation, the first light is emitted from the first light-emitting region and electrons are emitted from the first partial region; The electron source according to any one of Technical Solutions 3 and 4, wherein in the second operation, the first light is emitted from the second light-emitting region and electrons are emitted from the second partial region.

[0069] (Technical proposal 8) In the first operation, the first light is not emitted from the second light-emitting region, and electrons are not emitted from the second partial region; In the second operation, the first light is not emitted from the first light-emitting region, and electrons are not emitted from the first partial region.

[0070] (Technical proposal 9) The second light emitting unit is a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type provided between the first semiconductor layer and the first member; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; The electron source according to any one of Technical Schemes 1 to 8, comprising:

[0071] (Technical proposal 10) The electron source according to Technical Solution 9, wherein the light-emitting layer includes a plurality of barrier layers and a well layer provided between the plurality of barrier layers.

[0072] (Technical proposal 11) The electron source according to any one of Technical Solutions 1 to 10, wherein the second region is in contact with the first region.

[0073] (Technical proposal 12) The electron source according to any one of Technical Schemes 1 to 11, wherein the second region is island-shaped or mesh-shaped.

[0074] (Technical proposal 13) the second region includes a surface region and a non-surface region; the non-surface region is provided between the first region and the surface region, the surface region comprises carbon and hydrogen; 13. The electron source according to any one of Technical Schemes 1 to 12, wherein the non-surface region does not contain hydrogen, or the concentration of hydrogen in the non-surface region is lower than the concentration of hydrogen in the surface region.

[0075] (Technical proposal 14) 14. The electron source according to any one of Technical Schemes 1 to 13, wherein the second region includes at least one selected from the group consisting of boron and aluminum.

[0076] (Technical proposal 15) The electron source according to any one of Technical Schemes 1 to 14, wherein the second thickness of the second region is thinner than the first thickness of the first region.

[0077] (Technical proposal 16) the second thickness of the second region is 30 nm or less; The electron source according to any one of Technical Schemes 1 to 14, wherein the first thickness of the first region is 10 nm or more and 100 nm or less.

[0078] (Technical proposal 17) Further comprising a container; the first member is provided in the container, 17. The electron source according to any one of Technical Schemes 1 to 16, wherein the inside of the container is at a pressure lower than 1 atmosphere.

[0079] (Technical proposal 18) a first member including a first region and a second region; a first light emitting unit configured to emit first light having a first peak wavelength into the first member; a second light emitting unit configured to emit second light having a second peak wavelength shorter than the first peak wavelength into the first member; Equipped with a second conduction band energy of the second region is higher than a first conduction band energy of the first region; a first energy of the first light is greater than an absolute value of a difference between the second conduction band energy and the first conduction band energy; The second energy of the second light is greater than the band gap energy of the first region.

[0080] (Technical proposal 19) An electron source according to any one of Technical Schemes 1 to 18; a control circuit configured to control the electron source; An electronic device comprising:

[0081] (Technical proposal 20) In x Al y Ga 1-x-y a first light and a second light are incident on a first member including a first region including N(0≦x≦1, 0≦y≦1, x+y≦1) and a second region including diamond, causing electrons to be emitted from the first member; the first light has a first peak wavelength; The second light has a second peak wavelength that is shorter than the first peak wavelength.

[0082] According to the embodiments, an electron source, an electron device, and an electron emission method capable of improving characteristics are provided.

[0083] The embodiments of the present invention have been described above with reference to examples. However, the present invention is not limited to these examples. For example, the specific configurations of the components and light-emitting units included in the electron source and electronic device are within the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting them from known ranges.

[0084] Any combination of two or more elements of each example within the scope of technical feasibility is also included within the scope of the present invention as long as it encompasses the gist of the present invention.

[0085] All electron sources, electronic devices, and electron emission methods that can be implemented by a person skilled in the art by appropriately modifying the design based on the electron source, electronic device, and electron emission method described above as embodiments of the present invention also fall within the scope of the present invention, as long as they include the gist of the present invention.

[0086] Within the scope of the concept of the present invention, a person skilled in the art may conceive of various modifications and alterations, and it is understood that these modifications and alterations also fall within the scope of the present invention.

[0087] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0088] 10, 20: first and second light emitting portions, 11: light emitting region, 11a, 11b: first and second light emitting regions, 15, 25: first and second bases, 21, 22: first and second semiconductor layers, 23: light emitting layer, 23a: barrier layer, 23b: well layer, 30: first member, 30a, 30b: first and second partial regions, 30x: partial region, 31, 32: first and second regions, 32a: surface region, 32b: non-surface region, 60: container, 70: control circuit, 81: electrons, 110-113: electron sources, 120: electronic device, D1-D3: first to third directions, Ec1, Ec2: first and second conduction band energies, Eg1: band gap energy, Ev: vacuum level, L1, L2: 1st and 2nd light, PL1: 1st plane, hν1, hν2: 1st and 2nd energy, t1, t2: 1st and 2nd thickness

Claims

1. In ｘ Al ｙ Ga １－ｘ－ｙ a first member including a first region including N (0≦x≦1, 0≦y≦1, x+y≦1) and a second region including diamond; a first light emitting unit configured to emit first light having a first peak wavelength into the first member; a second light emitting unit configured to emit second light having a second peak wavelength shorter than the first peak wavelength to the first member; An electron source comprising:

2. the second light-emitting portion is provided between the first light-emitting portion and the second region in a first direction, The electron source according to claim 1 , wherein the first region is provided between the second light-emitting portion and the second region in the first direction.

3. the first light-emitting unit includes a plurality of light-emitting regions configured to emit the first light, The electron source according to claim 2 , wherein the plurality of light-emitting regions are arranged two-dimensionally along a first plane intersecting the first direction.

4. The electron source of claim 3 , wherein at least some of the plurality of light-emitting regions comprise surface-emitting lasers.

5. the first member includes a first partial region and a second partial region; the plurality of light-emitting regions include a first light-emitting region and a second light-emitting region, the first partial region overlaps with the first light-emitting region in the first direction; the second partial region overlaps with the second light-emitting region in the first direction, In a first operation, the first light is emitted from the first light-emitting region and electrons are emitted from the first partial region; The electron source according to claim 2 , wherein in a second operation, the first light is emitted from the second light-emitting region and electrons are emitted from the second partial region.

6. 6. The electron source according to claim 1, wherein the second region is in an island or mesh shape.

7. 2. The electron source of claim 1, wherein the second region includes at least one selected from the group consisting of boron and aluminum.

8. a first member including a first region and a second region; a first light emitting unit configured to emit first light having a first peak wavelength into the first member; a second light emitting unit configured to emit second light having a second peak wavelength shorter than the first peak wavelength to the first member; Equipped with a second conduction band energy of the second region is higher than a first conduction band energy of the first region; a first energy of the first light is greater than an absolute value of a difference between the second conduction band energy and the first conduction band energy; The second energy of the second light is greater than the band gap energy of the first region.

9. The electron source according to claim 1 ; a control circuit configured to control the electron source; An electronic device comprising:

10. In ｘ Al ｙ Ga １－ｘ－ｙ a first light and a second light are incident on a first member including a first region including N (0≦x≦1, 0≦y≦1, x+y≦1) and a second region including diamond, causing electrons to be emitted from the first member; the first light has a first peak wavelength; The second light has a second peak wavelength that is shorter than the first peak wavelength.

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