Plating treatment apparatus and plating treatment method

Abstract

To form a plating film with precision in a short time.SOLUTION: A plating apparatus comprises: a housing which has an aperture, and in which an electrode is arranged; an ion-conducting membrane which is provided to block the aperture of the housing, and forms a liquid chamber along with the housing; a conducting section which has a plating formation surface on which plating is formed; and drainage flow path forming means which is arranged between the ion-conducting membrane and the conducting section, and forms a drainage flow path for draining a liquid passing through the ion-conducting membrane out to between the ion-conducting membrane and the conducting section. The plating apparatus is configured so as to form the plating on the plating formation surface by electrolysis through the ion-conducting membrane by applying a voltage to between the electrode and the conducting section. The plating formation surface has conductivity, and the plating formed on the plating formation surface is peelable.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a plating apparatus and a plating method. [Background technology]

[0002] Conventionally, there has been known a method for manufacturing a wiring substrate using an insulating substrate having through holes (for example, Patent Document 1). In the method for manufacturing a wiring substrate described in Patent Document 1, a seed layer is first formed on one surface of the insulating substrate. Next, the surface opposite to the surface on which the seed layer is formed is covered with a masking film, and the insulating substrate and an anode are arranged so that the surface of the insulating substrate on which the seed layer is formed faces the anode, and electroplating is performed.

[0003] After the through-holes on the surface where the seed layer is formed are blocked with a metal layer, the masking film is removed, and an insulating substrate and an anode are disposed so that the surface from which the masking film has been removed faces the anode, and electroplating is performed to form a metal layer in the through-holes. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent No. 5558614 Summary of the Invention [Problem to be solved by the invention]

[0005] However, conventional methods for manufacturing wiring substrates have the problem that they require many pre-treatment steps to plate the insulating substrate, making the work complicated. Furthermore, since a metal layer is formed in the through-holes of the insulating substrate by electroplating, the plating process takes a long time. In particular, the method for manufacturing wiring substrates described in Patent Document 1 is less likely to produce voids in the metal layer, but requires more steps to form the metal layer, resulting in poor manufacturing efficiency and a long manufacturing time for the wiring substrate.

[0006] The present invention has been made in view of the above-mentioned problems, and has as its object to provide a plating processing apparatus and a plating method that can form plating accurately in a short time. [Means for solving the problem]

[0007] The plating processing apparatus according to the present invention comprises a housing having an opening and an electrode disposed therein, an ion conductive membrane disposed to close the opening of the housing and forming a liquid chamber together with the housing, an electric current conducting portion having a plating forming surface on which a plating is formed, and a drainage flow path forming means disposed between the ion conductive membrane and the electric current conducting portion and forming a drainage flow path between the ion conductive membrane and the electric current conducting portion for draining liquid that has passed through the ion conductive membrane. The plating processing apparatus is configured to form the plating on the plating forming surface by electrolysis via the ion conductive membrane by applying a voltage between the electrode and the electric current conducting portion, and the plating forming surface is electrically conductive and configured so that the plating formed on the plating forming surface can be peeled off.

[0008] In the plating processing apparatus according to the present invention, the plating surface may be formed using a material selected from a material having a passive film, a conductive oxide film, a carbon allotrope material, and a material with a noble ionization tendency.

[0009] In the plating processing apparatus according to the present invention, the drainage flow path forming means may be formed in a net shape.

[0010] The plating processing apparatus according to the present invention may further include a base portion to which the current-carrying unit is attached, and the current-carrying unit may be configured to be detachable from the base portion.

[0011] The plating processing apparatus according to the present invention may further include an insulating member provided on the peripheral edge of the surface of the drainage flow path forming means that faces the conductive portion.

[0012] The plating processing apparatus according to the present invention may further include a covering member for covering a non-plating portion, the covering member being provided between the drainage flow path forming means and the current-carrying portion.

[0013] The plating method of the present invention is a plating method using the plating processing device described in claim 1, characterized in that by applying a voltage between the electrode and the current-carrying part, plating is formed on the plating formation surface by electrolysis via the ion conductive membrane, and then the plating formed on the plating formation surface is peeled off.

[0014] The plating method according to the present invention may include integrating the plating with the workpiece placed on the conductive part, and peeling off a composite of the workpiece and the plating from the plating-forming surface.

[0015] The plating method according to the present invention may include a pressing step in which a workpiece having a through hole formed therein is pressed against the plating forming surface of the current-carrying part by at least one of the ion conductive membrane and the drainage flow path forming means; a voltage application step in which a voltage is applied between the electrode and the current-carrying part to form a plating in the through hole of the workpiece; and a plating stripping step in which the plating formed in the through hole is stripped from the plating forming surface.

[0016] The plating method according to the present invention may also perform a pattern plating process in which plating is formed on the plating formation surface while the non-plated portion is covered by a covering member provided between the drainage flow path forming means and the conductive portion.

[0017] In the plating method according to the present invention, the pattern plating may be performed a plurality of times so that at least a portion of the plating overlaps with another portion of the plating, thereby forming one plating pattern by the plurality of pattern plating processes.

[0018] In the plating method according to the present invention, the plating pattern peeled from the plating formation surface may be attached to an insulating substrate.

[0019] The plating method according to the present invention may include performing the pattern plating process multiple times, peeling the formed platings from the plating formation surface, and attaching the platings to an insulating substrate so that at least a portion of the platings overlap.

[0020] In the plating processing method according to the present invention, the drainage flow path forming means may have one or more openings whose opening area is equal to or greater than the opening area of ​​the through hole of the workpiece, and the drainage flow path forming means may be arranged so that the through hole of the workpiece overlaps with the opening of the drainage flow path forming means. [Effects of the Invention]

[0021] According to the present invention, it is possible to provide a plating processing apparatus and a plating method that can form plating accurately in a short time. [Brief explanation of the drawings]

[0022] [Figure 1] 1 is a schematic view showing a mold-open state of a plating processing apparatus according to a first embodiment of the present invention. [Figure 2] FIG. 2 is a schematic view showing a mold-closed state of the plating processing apparatus according to the first embodiment. [Figure 3] FIG. 2 is a schematic view showing a tray according to the first embodiment. [Figure 4] 3 is a schematic view showing a placement surface of a tray on which a conductive part according to the first embodiment is placed. FIG. [Figure 5] FIG. 3 is a cross-sectional view showing a tray on which an electric conduction unit according to the first embodiment is placed. [Figure 6] 3 is an enlarged view of a part of a cross section of a drainage flow path forming means according to the first embodiment. FIG. [Figure 7] FIG. 2 is a plan view showing a drainage flow path forming means and an object to be processed according to the first embodiment. [Figure 8] FIG. 10 is a plan view showing a modified example of the drainage flow path forming means according to the first embodiment. [Figure 9] FIG. 2 is an enlarged view showing a part of the plating processing apparatus according to the first embodiment. [Figure 10]FIG. 10 is a diagram showing a modified example of the plating processing apparatus according to the first embodiment. [Figure 11] FIG. 10 is a view showing a mold closed state of a modified example of the plating processing apparatus according to the first embodiment. [Figure 12] 1A to 1C are diagrams illustrating an example of a plating method according to a first embodiment. [Figure 13] 2 is a flowchart showing an example of a plating method according to the first embodiment. [Figure 14] 10A to 10C are diagrams illustrating a modified example of the plating method according to the first embodiment. [Figure 15] 10A to 10C are diagrams illustrating a modified example of the plating method according to the first embodiment. [Figure 16] FIG. 6 is an enlarged view showing a part of a plating processing apparatus according to a second embodiment. [Figure 17] 10A to 10C are diagrams illustrating an example of a plating method according to a second embodiment. [Figure 18] FIG. 10 is a diagram showing a first modified example of the plating method according to the second embodiment. [Figure 19] FIG. 10 is a diagram showing a first modified example of the plating method according to the second embodiment. [Figure 20] FIG. 10 is a diagram showing a second modified example of the plating method according to the second embodiment. [Figure 21] FIG. 10 is a diagram showing a second modified example of the plating method according to the second embodiment. [Figure 22] FIG. 10 is a diagram showing a third modified example of the plating method according to the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0023] The best mode for carrying out the present invention will be described below with reference to the drawings. Note that the following embodiments do not limit the inventions according to the claims, and not all of the combinations of features described in the embodiments are necessarily essential to the solution of the invention.

[0024] [Configuration of plating processing apparatus according to the first embodiment] First, referring to Figure 1, a plating processing apparatus 1 according to a first embodiment of the present invention will be outlined. The plating processing apparatus 1 according to the first embodiment, for example, reduces metal ions to precipitate a metal, thereby forming a coating (plating P) made of the metal on the surface E of a workpiece C. As will be described later, the plating processing apparatus 1 according to the first embodiment can also form the plating P not on the workpiece C, but on a plating formation surface 136a (described later) of a current-carrying part 136 (described later), and peel off only the formed plating P to use as a product or part.

[0025] In the first embodiment, the workpiece C is an insulator such as a resin substrate, a glass substrate, or a ceramic substrate, or a semiconductor such as a silicon wafer, a diamond substrate, or a compound semiconductor such as SiC or GaN, and is described as having one or more through holes formed therein as shown in Figures 1 and 7, but is not limited thereto. The workpiece C may also be a conductor such as a metal material or CFRP, or a material such as a resin substrate, a glass substrate, a silicon wafer, or a ceramic substrate on which a conductor portion is formed.

[0026] 1 and 9, the plating processing apparatus 1 includes a housing 4 having an opening and having an electrode 20 disposed therein, an ion conductive membrane 6 disposed to close the opening of the housing 4 and forming a liquid chamber 3 together with the housing 4, an electric current conductor 136 having a plating formation surface 136a on which a plating P is formed, and a drainage flow path forming means 60 disposed between the ion conductive membrane 6 and the electric current conductor 136 and forming a drainage flow path 64 (see FIG. 6), which will be described later, between the ion conductive membrane 6 and the electric current conductor 136 to drain the liquid that has passed through the ion conductive membrane 6. The plating processing apparatus 1 also includes a power supply unit 7 that applies a voltage between the electrode 20 and the electric current conductor 136.

[0027] The plating processing device 1 is configured to form a plating P on the plating formation surface 136a of the current-carrying part 136 by electrolysis via the ion-conductive membrane 6 by applying a voltage between the electrode 20 and the current-carrying part 136.

[0028] The plating processing apparatus 1 further includes a mounting table 100 on which the workpiece C can be placed, a movement mechanism (not shown) for moving at least one of the mounting table 100 and the housing 4 relative to the other, a solution supply unit (not shown) for supplying or discharging the electrolyte into the liquid chamber 3, and a holding jig 35 for holding the ion conductive membrane 6. The holding jig 35 includes an inner frame membrane jig 36 and an outer frame membrane jig 37 that engages with the inner frame membrane jig 36.

[0029] In the first embodiment, the electrolytic solution is a liquid containing, for example, a metal in an ionic state to be deposited as a plating P on the plating formation surface 136a of the current-carrying part 136 or the surface E of the workpiece C, and examples of the metal contained include copper, gold, silver, and nickel. The electrolytic solution is an ionized version of these metals, and various known electrolytic solutions can be used. Note that the electrolytic solution is not limited to the examples given here.

[0030] The mounting table 100 is disposed between the support base 8 and the housing 4, and is configured so that the workpiece C can be placed on its surface. Specifically, as shown in Figures 1 and 4, the mounting table 100 includes a tray 102 that functions as a base portion for mounting the current-carrying unit 136, and a mounting base 104 on which the tray 102 can be placed.

[0031] 1, the mounting base 104 is disposed between the support base 8 and the housing 4. The mounting base 104 has a surface on which the tray 102 is attached formed with a tray fixing hole (not shown) into which a tray positioning member 142 of the tray 102, which will be described later, can be inserted.

[0032] The mounting base 104 has an electrode portion (not shown) that is electrically connected to the tray current-carrying portion 130 when the tray 102 is placed on it. The electrode portion of the mounting base 104, and therefore the current-carrying portion 136, is connected to the negative pole (- pole) of the power supply unit 7. As a result, the current-carrying portion 136 constitutes a cathode in the plating processing apparatus 1.

[0033] 3, the tray 102 includes a non-conductive base portion 120 and a conductive tray current-carrying portion 130. The tray 102 is configured to be detachable from the mounting base 104. The tray 102 is also configured to have a detachable current-carrying portion 136.

[0034] 3 and 5, the base 120 includes a mounting surface PS on which the current-carrying unit 136 can be placed. Specifically, the base 120 has a mounting portion 122 on the mounting surface PS as a mounting area for the current-carrying unit 136, and a peripheral portion 124 extending vertically from the periphery of the mounting portion 122, and is made of an insulating material.

[0035] In the first embodiment, the tray 102 has the mounting portion 122 as a recess into which the conductive portion 136 can be fitted, and the mounting base 104 has a recess into which the tray 102 can be fitted, but this is not limiting. For example, the mounting base 100 may be configured such that the conductive portion 136 is fitted into the mounting base 104 without using the tray 102, or such that the conductive portion 136 is simply placed on the tray 102 or the mounting base 104.

[0036] Furthermore, the base 120 further includes a through-hole 126 at the center of the mounting portion 122, penetrating from the mounting surface PS to the opposing surface BS of the mounting surface PS. Furthermore, the base 120 is configured so that the pressure on the mounting surface PS side can be reduced from the opposing surface BS of the mounting surface PS through the through-hole 126. In the first embodiment, the through-hole 126 has a rounded rectangular shape, but this is not limited to this and various arbitrary shapes can be used. Furthermore, the number and arrangement of the through-holes 126 are not limited to the above-mentioned configuration and various arbitrary numbers and arrangements can be used.

[0037] The mounting portion 122 is formed in a rectangular shape, and a sealing member such as an O-ring 127 is embedded along the edge of the mounting portion 122. The mounting portion 122 is also provided with a through-hole 128 for removing the conductive part, which penetrates from the mounting surface PS to the opposing surface BS of the mounting surface PS. The through-hole 128 for removing the conductive part has a diameter that allows a protruding member (not shown) to pass through. The tray 102 can easily remove the conductive part 136 placed on the mounting portion 122 by protruding a protruding member from the through-hole 128 for removing the conductive part toward the mounting surface PS.

[0038] In the first embodiment, the through holes 128 for removing the conductive part are provided at each of the four corners of the mounting part 122, one on the inside of the O-ring 127, but this is not limited to this and any number and arrangement can be adopted.

[0039] As shown in FIG. 5 , the tray current conductor 130 extends from the placement surface PS to the opposing surface BS of the placement surface PS, and is attached to the base 120 so as to be electrically connected to the current conductor 136. Specifically, the tray current conductor 130 is a U-shaped plate member that extends from the placement surface PS to the opposing surface BS of the placement surface PS through the through-hole 126. In the first embodiment, the tray 102 has two tray current conductors 130, but this is not limiting. The width and thickness of the tray current conductor 130 are determined depending on the current applied to the tray current conductor 130.

[0040] It should be noted that the tray current conducting part 130 is not limited to the above-described configuration and may have any of various configurations. For example, the tray current conducting part 130 may be a pin-shaped member or a block-shaped member embedded so as to extend from the placing surface PS to the opposing surface BS of the placing surface PS, or may be an elastic probe-like member.

[0041] 5, the opposing surface BS has tray positioning members 142. In the first embodiment, two tray positioning members 142 are provided on each end of the tray current-carrying part 130 that are parallel to the longitudinal direction of the tray current-carrying part 130, but the present invention is not limited to this and any number and arrangement of tray positioning members 142 may be adopted.

[0042] The tray positioning members 142 are configured to be insertable into tray fixing holes formed in the surface of the mounting base 104. The tray 102 is fixed to the mounting base 104 by inserting the tray positioning members 142 into the tray fixing holes.

[0043] The current-carrying unit 136 is configured to be detachable from the tray 102. In the first embodiment, the current-carrying unit 136 is a thin plate-like member formed to have the same shape and size as the mounting unit 122, and is placed on the mounting surface PS of the base unit 120. Note that the current-carrying unit 136 is not limited to having the same shape and size as the mounting unit 122, and multiple types of current-carrying units 136 can be used depending on the situation, such as a shape that matches the portion of the workpiece C that is to be plated. Furthermore, the current-carrying unit 136 may be provided with one or more suction holes (not shown) for suctioning the workpiece C to the current-carrying unit 136 when the pressure on the mounting surface PS side is reduced through the through-hole 126.

[0044] The current-carrying portion 136 is made of a metal material having a passivation film, such as aluminum, chromium, titanium, alloys containing these as main components, stainless steel, or a precious metal material, such as gold, silver, platinum, palladium, rhodium, ruthenium, osmium, or iridium. This configuration allows the current-carrying portion 136 to easily peel off the plating P formed on the surface of the current-carrying portion 136. As will be described later, when the plating-forming surface 136a is made of a different material from the current-carrying portion 136, the current-carrying portion 136 can be made of any of a variety of materials as long as it is electrically conductive.

[0045] Furthermore, the current-carrying portion 136 only needs to be conductive in at least the plating formation surface 136a (the front surface of the current-carrying portion 136 in the first embodiment), the surface in contact with the tray current-carrying portion 130 (the back surface of the current-carrying portion 136 in the first embodiment), and the side surface or interior connecting the plating formation surface 136a and the surface in contact with the tray current-carrying portion 130. That is, the current-carrying portion 136 may be configured such that an insulating material is covered with a conductive material, or such that a conductive material is provided inside an insulating material so as to penetrate from the back surface to the front surface of the insulator, and a conductive material is provided on both the front and back surfaces of the insulating material. In particular, a configuration in which an elastic material such as a resin material or a rubber material is covered with a conductive film improves the sealing performance of the periphery of the through-hole in the workpiece C, enabling the through-hole to be filled with plating P more accurately.

[0046] The plating surface 136a is provided on the surface of the current-carrying part 136 (the surface facing the drainage flow path forming means 60). The plating surface 136a is conductive and configured so that the plating P formed on the plating surface 136a can be peeled off. Specifically, the plating surface 136a is formed using a material selected from a material having a passive film (material A), a conductive oxide film (material B), a carbon allotrope material (material C), and a material with a noble ionization tendency (material D).

[0047] In the first embodiment, examples of material A (material having a passive film) include aluminum, chromium, titanium, tungsten, stainless steel, molybdenum, magnesium, etc., as well as alloys thereof, materials containing these, and compounds thereof. In the first embodiment, examples of material B (conductive oxide film) include an ATO (antimony-doped tin oxide, SnO:Sb) film, an FTO (fluorine-doped tin oxide, SnO:F) film, an ITO (tin-doped indium oxide, InO:Sn) film, an AZO (aluminum-doped zinc oxide, ZnO:Al) film, and a GZO (gallium-doped zinc oxide, ZnO:Ga) film. Furthermore, in the first embodiment, examples of material D (carbon allotrope material) include carbon, carbon fiber, graphite sheet, carbon nanotube (CNT), graphite, graphene, diamond, and materials containing these. Furthermore, in the first embodiment, examples of material D (material with noble ionization tendency) include gold (standard electrode potential: 1.50), platinum (standard electrode potential: 1.12), iridium (standard electrode potential: 1.156), palladium (standard electrode potential: 0.98), and silver (standard electrode potential: 0.85), as well as materials containing these and compounds thereof. In the first embodiment, "noble ionization tendency" means that the standard electrode potential is higher than that of hydrogen (the ionization tendency is lower than that of hydrogen).

[0048] The plating formation surface 136a may be made of the same material as the current-carrying part 136, or may be made of a different material from the current-carrying part 136. That is, the plating formation surface 136a may be integral with or separate from the current-carrying part 136. When plating a workpiece C having a large number of through-holes, it is preferable that the current-carrying part 136 is made of a material with low electrical resistivity, such as copper, and that the surface of the current-carrying part 136 is coated with a conductor that can peel off the plating P, forming the plating formation surface 136a, in order to ensure that the plating formation speed in each through-hole is uniform.

[0049] The housing 4 is disposed vertically above the mounting base 104, and is formed in a cylindrical shape with a bottom that defines a liquid chamber 3 having an internal upper surface and an internal side surface. The shape of the housing 4 can be any known configuration, and therefore a detailed description thereof will be omitted.

[0050] Furthermore, a discharge flow path 31 having an opening is formed at the top of the inner side surface of the housing 4 (preferably, the opposing inner side surface), and the discharge flow path 31 is connected to a pressurizing mechanism 30 described later.

[0051] The housing 4 is provided with a pressurizing mechanism 30 on the outer wall surface of the discharge flow path 31 so as to protrude from the side surface of the housing 4. The housing 4 is disposed opposite the mounting base 104 as described above, and is configured to be able to form a liquid chamber 3 that becomes a closed space between the housing 4 and the mounting base 104 when, for example, the housing 4 is moved toward the mounting base 104 by the moving mechanism.

[0052] The pressurizing mechanism 30 is connected to the discharge flow path 31 and has an on-off valve that opens and closes the discharge flow path 31. The pressurizing mechanism 30 is configured to be able to open and close the discharge flow path 31, and is also configured to be able to pressurize the electrolyte solution supplied into the liquid chamber 3. The pressurizing mechanism 30 closes the on-off valve and then reduces the volume inside the liquid chamber 3 to pressurize the electrolyte solution inside the liquid chamber 3.

[0053] The clamp 39 is provided with an exhaust means for exhausting (preferably vacuum exhausting) the air in the space below between the mounting base 104 and the ion conductive membrane 6 when the clamp 39 and the mounting base 104 are fitted together. The exhaust means has an on-off valve 47 that opens and closes to reduce the pressure in the lower space. The on-off valve 47 is disposed outside a pressure reduction flow path 48 that opens into the lower space and communicates with the lower side of the clamp 39.

[0054] The pressure reduction flow path 48 is connected to the liquid chamber 3 (the space above the ion conductive membrane 6) via a pressure reduction flow path, a flow path opening / closing valve, and a bypass flow path (none of which are shown). The bypass flow path is connected to a pressure reduction unit (not shown) having a vacuum pump or the like for pressure reduction. This pressure reduction system circuit is provided as a separate circuit from the solution supply system circuit such as the pressurization mechanism 30.

[0055] The pressure-reducing flow path 48 also functions as a drainage flow path that communicates with the drainage flow path 64 of the drainage flow path forming means 60. The pressure-reducing flow path is configured to drain the electrolyte flowing through the pressure-reducing flow path. In the first embodiment, the pressure-reducing flow path 48 also functions as a drainage flow path, which eliminates the need to provide a separate flow path or member for drainage, and thus has the advantage of enabling the plating processing apparatus 1 to be made smaller and simpler.

[0056] The electrode 20 is a metal plate and is made of any metal material (for example, copper, etc.). The electrode 20 is suspended from the inner upper surface of the housing 4 and is connected to the positive electrode (+ electrode) of the power supply unit 7 via the housing 4. With this configuration, the electrode 20 constitutes an anode in the plating processing device 1. Note that the electrode 20 can have a known configuration, and therefore a detailed description thereof will be omitted.

[0057] The power supply unit 7 applies a voltage between the electrode 20 serving as an anode and the object to be treated C serving as a cathode. The power supply unit 7 can employ various known configurations.

[0058] The movement mechanism moves at least one of the mounting base 104 and the housing 4 relatively in a direction toward or away from the other. Specifically, the movement mechanism has a linear motion rod (not shown), and is configured to move the housing 4 toward or away from the mounting base 104 by raising and lowering the housing 4 with the linear motion rod.

[0059] In addition, the moving mechanism is configured to be able to stop the housing 4 at at least three locations: an upper end position (original position: see Figure 1) where the housing 4 is furthest away from the mounting base 104; a pressure reduction position where a liquid chamber 3 is formed between the housing 4 and the mounting base 104 and the lower space formed by the mounting base 104 and the clamp portion 39 fitting together below the liquid chamber 3 and the ion conductive membrane 6 is reduced in pressure; and a processing position (see Figure 2) where the housing 4 is brought even closer to the mounting base 104 than the pressure reduction position and a plating process is performed.

[0060] In the first embodiment, the movement mechanism moves the housing 4 toward or away from the mounting base 104, but is not limited to this. In addition, the movement mechanism is not limited to the configuration including the linear motion rod described above, and any configuration can be adopted as long as it is capable of moving the housing 4 toward or away from the mounting base 104.

[0061] The ion conductive membrane 6 is a sheet-like thin film member, and may be, for example, a porous membrane, a solid electrolyte membrane, etc. Since the ion conductive membrane 6 may have a known configuration, detailed description thereof will be omitted.

[0062] As shown in Figures 6 and 7, the drainage flow path forming means 60 is formed in a mesh shape, and has mesh openings through which the electrolyte containing metal ions that has passed through the ion conductive membrane 6 can pass. Specifically, the drainage flow path forming means 60 is a mesh member, and is attached to a drainage flow path forming means frame (not shown) with an adhesive or the like. For example, a metal mesh such as an insulated stainless steel mesh or a synthetic fiber mesh such as a polyester mesh can be used as the drainage flow path forming means 60. Note that since known structures can be used for the materials used for the drainage flow path forming means 60, detailed description thereof will be omitted.

[0063] In the first embodiment, the drainage flow path forming means 60 has an opening 62 as shown in Fig. 7. However, the present invention is not limited to this, and the drainage flow path forming means 60 does not have to have the opening 62, as will be described later. The opening area of ​​the opening 62 is configured to be equal to or larger than the opening area of ​​the through-hole of the workpiece C. Furthermore, the opening 62 is provided at a position where the through-hole of the workpiece C overlaps with the opening 62 when the drainage flow path forming means 60 and the workpiece C face each other.

[0064] In the first embodiment, the drainage flow path forming means 60 is provided with one square-shaped opening 62, but is not limited to this. The drainage flow path forming means 60 may have multiple openings 62 as shown in FIG. 8. The number of openings 62 may be any number. For example, as shown in FIG. 8, the drainage flow path forming means 60 may have the same number of openings 62 as the number of through holes in the workpiece C, or may have a number of openings 62 different from the number of through holes. By providing the multiple openings 62 so that they overlap with each through hole in the workpiece C, the spaces between the through holes in the workpiece C can be pressed against the plating formation surface 136a of the current-carrying part 136, thereby reducing variation in the quality of the plating P formed in each through hole. In addition, when the multiple openings 62 are arranged so as to overlap with each through hole of the workpiece C, in the pressing process described below, the workpiece C having the through holes formed therein has the peripheral portion of the through hole pressed against the plating formation surface 136a of the conductive portion 136 by the ion conductive membrane 6, and the space between each through hole is pressed by the drainage flow path forming means 60.

[0065] The opening area of ​​the opening 62 can have any of a variety of configurations as long as it is equal to or larger than the opening area of ​​the through-hole of the workpiece C.

[0066] 6, the drainage flow path forming means 60 forms drainage flow paths 64 by spaces created by the three-dimensional intersection of the material forming the mesh and the surface E of the workpiece C that contacts the lower surface of the drainage flow path forming means 60. The drainage flow path forming means 60 also forms drainage flow paths 64 between the spaces created by the three-dimensional intersection of the material forming the mesh and the lower surface of the ion conductive membrane 6. The drainage flow path forming means 60 is configured to drain the electrolyte below the membrane through the drainage flow paths 64 to the pressure reduction flow path 48.

[0067] In this embodiment, draining the electrolyte solution below the membrane means draining the electrolyte solution that has passed through the ion conductive membrane 6 before voltage application.

[0068] As will be described later, when plating P is formed without placing the workpiece C on the plating formation surface 136a of the current-carrying part 136, the drainage flow path forming means 60 forms a drainage flow path 64 by the space created by the three-dimensional intersection of the materials forming the mesh and the plating formation surface 136a of the current-carrying part 136 that contacts the underside of the drainage flow path forming means 60 or the covering member 70 described later.

[0069] The drainage flow path forming means frame has an attachment opening for attaching the drainage flow path forming means 60, and is configured, for example, in a square shape. In the first embodiment, the drainage flow path forming means frame is attached to the bottomed tubular opening of the housing 4 via the outer frame membrane jig 37 and the clamping portion 39. That is, the drainage flow path forming means 60 is disposed between the ion conductive membrane 6 and the current-carrying portion 136 while being supported by the drainage flow path forming means frame. Note that the drainage flow path forming means frame can have a known configuration, and therefore a detailed description thereof will be omitted.

[0070] 10, the plating processing apparatus 1 may further include an insulating member 65 provided on the peripheral edge of the surface of the drainage flow path forming means 60 facing the conductive part 136. In the first embodiment, the insulating member 65 is made of an insulating sheet IS and is clamped by the clamping unit 39. However, this is not limiting. The insulating member 65 may be placed on the tray 102 of the mounting table 100 or attached to the peripheral edge of the surface of the drainage flow path forming means 60 facing the conductive part 136 with an adhesive or the like. The insulating sheet IS may be made of, for example, silicone rubber, EPDM, or a composite film formed by coating a PET film with silicone rubber. However, the insulating member 65 is not limited thereto. The insulating member 65 may be made of chemical-resistant silicone rubber, fluororubber, or a photosensitive resin material (emulsion) with a chemical-resistant coating, and may be applied as a thin film to the peripheral edge of the surface of the mesh-shaped drainage flow path forming means 60 facing the conductive part 136.

[0071] As shown in Figure 11, the insulating member 65 is positioned at the processing position so as to cover the end of the workpiece C and at least the end of the peripheral portion 124 of the tray 102 of the mounting table 100 on the side of the workpiece C, and is configured to prevent the electrolyte from seeping into the gap between the workpiece C and the peripheral portion 124 of the tray 102.

[0072] In the first embodiment, the insulating member 65 is configured to have the same shape and size as the drainage flow path forming means 60. However, the present invention is not limited to this, and various arbitrary configurations can be adopted as long as they are capable of preventing the electrolyte from seeping into the gap between the workpiece C and the peripheral portion 124 of the tray 102.

[0073] [Plating method according to the first embodiment] 12 and 13, a plating method using the plating processing device 1 having the above configuration will be described. Schematically, the plating method according to the first embodiment involves applying a voltage between the electrode 20 and the current-carrying part 136 to form a plating P on the plating formation surface 136a by electrolysis via the ion conductive membrane 6, and then peeling off the plating P formed on the plating formation surface 136a.

[0074] Furthermore, the plating method according to the first embodiment includes a pressing step in which the workpiece C having a through-hole formed therein is pressed against the plating formation surface 136a of the current-carrying part 136 by at least one of the ion conductive membrane 6 and the drainage flow path forming means 60; a voltage application step in which a voltage is applied between the electrode 20 and the current-carrying part 136 to form a plating P in the through-hole of the workpiece C; and a plating removal step in which the plating P formed in the through-hole is removed from the plating formation surface 136a.

[0075] Furthermore, in the plating method according to the first embodiment, the drainage flow path forming means 60 has one or more openings 62 whose opening area is equal to or greater than the opening area of ​​the through hole of the workpiece C, and the drainage flow path forming means 60 is arranged so that the through hole of the workpiece C overlaps with the opening 62 of the drainage flow path forming means 60.

[0076] Next, the plating method according to the first embodiment will be specifically described. The workpiece C will be described as a sheet-like (flat) member such as a resin film or a glass substrate having one or more through holes formed therein, but is not limited thereto. As shown in modified examples of the plating method according to the first embodiment described later, plating can be performed on various arbitrary workpieces C as long as they are members having through holes formed therein.

[0077] First, as a preliminary step to the plating process, with the housing 4 separated from the mounting base 104 (original position), the user sets the tray 102 on which the workpiece C and the current-carrying part 136 are placed on the mounting base 104. Then, the moving mechanism lowers the housing 4 to the reduced pressure position, and the clamp part 39 of the housing 4 is fitted into the mounting base 104 (S1 in FIG. 13: approaching step).

[0078] At this time, the fitting position between the clamp part 39 and the mounting base 104 is set at a position where the drainage flow path forming means 60 is as close as possible to the surface E of the workpiece C. The workpiece C is sealed in a lower space formed between the mounting base 104 and the ion conductive membrane 6, and is separated from the liquid chamber 3.

[0079] Next, with the clamp portion 39 of the housing 4 fitted to the mounting base 104 on which the workpiece C is placed, the on-off valve 47 provided on the clamp portion 39 is opened and the space below is depressurized (S2 in FIG. 13: depressurization step). Then, while maintaining the depressurized state, the housing 4 is lowered to the processing position by the movement mechanism so that the clamp portion 39 of the housing 4 is completely fitted to the mounting base 104, and the ion conductive membrane 6 is brought into contact with the surface E of the workpiece C (S3 in FIG. 13: contact step).

[0080] Next, the pressurizing mechanism 30 pressurizes the electrolyte in the liquid chamber 3 (S4 in FIG. 13: pressurizing step). Thereafter, while the electrolyte in the liquid chamber 3 is pressurized, the on-off valve 47 is opened to open the pressure reduction flow path 48 to the atmosphere, or the pressure is reduced by a vacuum pump or the like for reducing pressure, thereby draining the electrolyte that has seeped out to the conductive part 136 side of the ion conductive membrane 6 through the drainage flow path 64 and the pressure reduction flow path 48 (S5 in FIG. 13: under-membrane drainage step).

[0081] This under-membrane drainage step allows the drainage flow path forming means 60 to perform its drainage function, and the ion conductive membrane 6 adheres to the surface E of the workpiece C. After the under-membrane drainage, the ion conductive membrane 6 adheres to the surface E of the workpiece C, and the workpiece C placed on the plating surface 136a of the current-carrying unit 136 is pressed against the plating surface 136a, as shown in FIG. 12a (S6: pressing step in FIG. 13). Thereafter, while the electrolyte in the liquid chamber 3 is pressurized, the power supply unit 7 applies a voltage between the electrode 20 and the current-carrying unit 136 (S7: voltage application step in FIG. 13). This results in a plating process in which metal ions are deposited on the plating surface 136a of the current-carrying unit 136 to form a metal coating (plating P), as shown in FIG. 12b.

[0082] Specifically, first, plating P is formed on the portion of plating formation surface 136a that is exposed from the through-hole of workpiece C. Then, as the thickness of plating P increases, it fills the through-hole of workpiece C. As a result, as shown in FIG. 12c, the through-hole is filled with plating P, and metal pillars (conductive pillars) of metal ions precipitated in the through-hole are formed.

[0083] In the first embodiment, the ion conductive membrane 6 and the plating formation surface 136a are not in direct contact with each other, but due to the pressure difference between the space above and below the ion conductive membrane 6, the electrolyte seeps out of the ion conductive membrane 6, and a plating P is formed on the exposed portion of the plating formation surface 136a.

[0084] After the plating process is completed, the moving mechanism raises the housing 4 to its original position, thereby separating the housing 4 from the mounting base 104 (S8: separating step in FIG. 13). After the housing 4 has moved to its original position, the user removes the tray 102 on which the workpiece C is placed from the mounting base 104. Then, as shown in FIG. 12d, the user removes the workpiece C placed on the plating formation surface 136a and peels the plating P formed in the through-hole from the plating formation surface 136a (S9: plating peeling step in FIG. 13). Through the above steps, a series of plating process steps is performed by the plating processing apparatus 1 according to the first embodiment.

[0085] [Modification of the plating method according to the first embodiment] The plating processing device 1 according to the first embodiment not only fills through holes formed in the workpiece C with plating P, but also enables plating processes that conventional plating processing devices could not achieve, such as the production of a composite material CM using plating P formed by plating. A modified version of the plating processing method according to the first embodiment will be described below. In this modified version of the plating processing method according to the first embodiment, the workpiece C placed on the current-carrying unit 136 is integrated with the plating P, and in the plating peeling step, the composite material CM of the workpiece C and the plating P is peeled off from the plating formation surface 136a. In this modified version of the plating processing method according to the first embodiment, the workpiece C is formed in a mesh shape, as shown in FIG. 14 . Specifically, the workpiece C is a mesh member in which multiple strands (metal wires or synthetic fibers) intersect like a net. That is, the workpiece C may be a metal mesh or a synthetic fiber mesh.

[0086] Specifically, in the modified plating method according to the first embodiment, as shown in Fig. 15a, in the voltage application step, the mesh-shaped workpiece C and the plating P are integrated. More specifically, when a voltage is applied in the voltage application step, the electrolyte solution that seeps out from the ion conductive membrane 6 first passes through the mesh (through holes) of the mesh member and permeates into the gap between the mesh member and the plating formation surface 136a of the current-carrying part 136, forming the plating P on the plating formation surface 136a. Furthermore, when the workpiece C is a metal mesh, the plating P is formed on the surfaces of the metal wires that make up the metal mesh.

[0087] As the thickness of the plating P increases, the mesh of the mesh member is filled, and in the process, the surface of the streaks is also covered with the plating P so as to be buried in the plating P. This forms a composite material CM of the workpiece C and the plating P. Then, as shown in FIG. 15b, in the plating peeling process, the composite material CM of the workpiece C and the plating P is peeled off from the plating formation surface 136a. The surface of the composite material CM of the mesh member and the plating P facing the plating formation surface 136a is covered with the plating P, and inside the composite material CM, the plating P formed by filling the multiple through holes is partially connected to each other. Furthermore, the mesh member is exposed on the surface of the composite material CM. Note that in a modified version of the plating method according to the first embodiment, it is also possible to perform the plating process until the mesh member is completely covered with the plating P, thereby forming a composite material CM in which the mesh member is not exposed on the surface.

[0088] In the modification of the plating method according to the first embodiment described above, the drainage flow path forming means 60 may not have the opening 62, as shown in Fig. 14. When the drainage flow path forming means 60 does not have the opening 62, the workpiece C having the through-hole formed therein is pressed against the plating formation surface 136a of the current-carrying part 136 by the drainage flow path forming means 60 in the pressing step.

[0089] [Advantages of the plating processing apparatus and plating method according to the first embodiment] As described above, the plating processing apparatus 1 according to the first embodiment includes a housing 4 having an opening and having an electrode 20 disposed therein, an ion conductive membrane 6 disposed to close the opening of the housing 4 and forming a liquid chamber 3 together with the housing 4, an electric current conductor 136 having a plating formation surface 136a on which a plating P is formed, and a drainage flow path forming means 60 disposed between the ion conductive membrane 6 and the electric current conductor 136 and forming a drainage flow path 64 between the ion conductive membrane 6 and the electric current conductor 136 for draining the liquid that has passed through the ion conductive membrane 6. When a voltage is applied between the electrode 20 and the electric current conductor 136, a plating P is formed on the plating formation surface 136a by electrolysis via the ion conductive membrane 6. The plating formation surface 136a is electrically conductive and configured so that the plating P formed on the plating formation surface 136a can be peeled off.

[0090] The plating processing apparatus 1 according to the first embodiment, having such a configuration, is a plating processing apparatus that enables a novel plating process, in which a plating P is formed on the plating formation surface 136a of the current-carrying portion 136 and the plating P is peeled off from the plating formation surface 136a, without performing pre-plating processes such as forming a seed layer on the workpiece C or covering and removing a masking film, which are performed in the wiring board manufacturing method described in Patent Document 1. The plating processing apparatus 1 according to the first embodiment forms the plating P on the peelable plating formation surface 136a of the current-carrying portion 136, thereby enabling the plating P to be formed accurately in a short time. Furthermore, the plating processing apparatus 1 according to the first embodiment has the advantage of enabling various plating processes and the formation of the plating P that could not be achieved with conventional plating processing apparatuses.

[0091] Furthermore, in the plating processing apparatus 1 according to the first embodiment, the drainage flow path forming means 60 removes the liquid layer formed below the ion conductive membrane 6, thereby generating a sufficient pressure difference between the inside of the liquid chamber 3 and below the membrane. This pressure difference makes it possible to bring the ion conductive membrane 6 and the plating formation surface 136a of the current-carrying part 136 close enough to each other so that the plating P can be formed, which has the advantage of enabling the plating P to be formed accurately in a short time.

[0092] Furthermore, when forming a plating P in the through-hole of the workpiece C, the plating processing device 1 according to the first embodiment can bring the ion conductive membrane 6 into close contact with the front surface E of the workpiece C so that the workpiece C is pressed against the plating formation surface 136a by the pressure of the electrolyte in the liquid chamber 3. This prevents the electrolyte from seeping onto the back surface of the workpiece C (the surface on the plating formation surface 136a side), and has the advantage of being able to form the plating P in the through-hole with high precision.

[0093] Furthermore, in the plating processing apparatus 1 according to the first embodiment, the plating formation surface 136a is formed using a material selected from the group consisting of a material having a passive film (material A), a conductive oxide film (material B), a carbon allotrope material (material C), and a material with a noble ionization tendency (material D). This configuration offers the additional advantage of ensuring the releasability of the plating P from the plating formation surface 136a.

[0094] Furthermore, in the plating processing apparatus 1 according to the first embodiment, the drainage flow path forming means 60 is formed in a mesh-like shape. This configuration allows a thin drainage flow path 64 to be formed between the ion conductive membrane 6 and the current-carrying part 136, thereby improving the accuracy of the plating process while maintaining the short processing time that is an advantage of plating via the ion conductive membrane 6. Furthermore, the drainage flow path forming means 60 can be realized using simple components without increasing the size and complexity of the plating processing apparatus 1, thereby improving the accuracy of the plating process while keeping facility costs low.

[0095] Furthermore, the plating processing apparatus 1 according to the first embodiment further includes a base (tray 102 in the first embodiment) on which the current-carrying unit 136 is attached, and the current-carrying unit 136 is detachably attached to the base (tray 102). This configuration allows the current-carrying unit 136, which has the plating-forming surface 136a, to be easily replaced even if the plating-forming surface 136a becomes worn or soiled. This provides an additional advantage of preventing a decrease in the accuracy of the plating process due to wear of the plating-forming surface 136a. Furthermore, after plating formation, the workpiece C and the current-carrying unit 136 are wet with the electrolyte, causing the workpiece C and the current-carrying unit 136 to be submerged in water. This makes it difficult to peel the plating P from the plating-forming surface 136a in situ while the current-carrying unit 136 is attached to the plating processing apparatus 1. Therefore, the ability to detach the current-carrying unit 136 from the base (tray 102) provides an additional advantage of facilitating the peeling of the plating P. In addition, it becomes easier to handle the film-like object C to be treated or the easily breakable object C such as thin glass.

[0096] The plating processing apparatus 1 according to the first embodiment further includes an insulating member 65 provided on the peripheral edge of the surface of the drainage flow path forming means 60 facing the current-carrying part 136. This configuration has the additional advantage of preventing the peripheral edges of the ion conductive membrane 6 or the drainage flow path forming means 60 from being pinched in the gap between the housing 4 and the current-carrying part 136 or the mounting table 100 at the processing position and being damaged. Another advantage is that it prevents the plating solution from seeping in between the current-carrying part 136 and the tray 102, which could result in the back side of the current-carrying part 136 or the tray current-carrying part 130 being plated, becoming contaminated, or reducing conductivity.

[0097] Furthermore, the plating method according to the first embodiment integrates the workpiece C placed on the current-carrying part 136 with the plating P, and peels off a composite material CM of the workpiece C and the plating P from the plating formation surface 136a. This configuration has the additional advantage of being able to produce a special composite material CM that cannot be produced by conventional plating processing devices.

[0098] Furthermore, the plating method according to the first embodiment includes a pressing step in which the workpiece C having through-holes formed therein is pressed against the plating formation surface 136a of the current-carrying unit 136 by at least one of the ion conductive membrane 6 and the drainage flow path forming means 60; a voltage application step in which a voltage is applied between the electrode 20 and the current-carrying unit 136 to form plating P in the through-holes of the workpiece C; and a plating removal step in which the plating P formed in the through-holes is removed from the plating formation surface 136a. This configuration provides the advantage of forming the plating P precisely in the through-holes of the workpiece C by pressing the workpiece C against the plating formation surface 136a, thereby preventing the plating P from seeping onto the back surface of the workpiece C (the surface facing the plating formation surface 136a). Furthermore, compared to conventional methods for manufacturing wiring substrates, this method has fewer steps for forming plating P in the through-holes and requires less time for plating, thereby providing the advantage of efficiently manufacturing wiring substrates in a short time using the workpiece C (insulating substrate) having through-holes.

[0099] Specifically, for example, the method for manufacturing a wiring substrate described in Patent Document 1 requires two plating steps: a step of arranging an insulating substrate and an anode so that the surface of the insulating substrate on which a seed layer is formed faces the anode, and then performing electroplating; and a step of blocking the through holes in the surface on which the seed layer is formed with a metal layer, and then arranging the insulating substrate and the anode so that the surface from which the masking film has been removed faces the anode, and then performing electroplating. On the other hand, the plating method according to the first embodiment has the advantage that the plating step can be performed only by a voltage application step.

[0100] Furthermore, the plating surface 136a of the current-carrying part 136 serves as a seed layer, and the plating P is formed from the plating surface 136a in one direction within the through-hole of the workpiece C (toward the ion conductive membrane 6 in the first embodiment), which has the advantage that pre-treatment steps for plating, such as the step of forming a seed layer on the workpiece C and the step of covering and removing a masking film, can be omitted.

[0101] Furthermore, in the plating method according to the first embodiment, the drainage flow path forming means 60 has one or more openings 62 whose opening area is equal to or larger than the opening area of ​​the through-hole in the workpiece C, and the drainage flow path forming means 60 is arranged so that the through-hole in the workpiece C overlaps with the opening 62 of the drainage flow path forming means 60. This configuration allows the ion conductive membrane 6 to be closer to the plating formation surface 136a than when using a drainage flow path forming means 60 without an opening 62, which has the additional advantage that the through-hole can be filled with plating P even in a thick workpiece C. Furthermore, because the drainage flow path forming means 60 is arranged so that the opening 62 overlaps with the through-hole in the workpiece C, the vicinity of the through-hole in the workpiece C can be pressed against the plating formation surface 136a of the current-carrying part 136, even when the drainage flow path forming means 60 has the opening 62.

[0102] [Configuration of plating processing apparatus according to the second embodiment] A plating processing apparatus 1 according to a second embodiment of the present invention will be outlined below. Description of components that overlap with those of the first embodiment will be omitted where appropriate. As shown in FIG. 16, the plating processing apparatus 1 according to the second embodiment further includes a covering member 70 for covering the non-plating portion. The covering member 70 is provided between the drainage flow path forming means 60 and the current-carrying portion 136. In the second embodiment, the covering member 70 includes a mesh portion 72, a covering portion 74 for covering the non-plating portion, and a covering member frame portion (not shown) that supports the mesh portion 72.

[0103] Similar to the drainage flow path forming means 60, the mesh portion 72 has a mesh through which metal ions that have passed through the ion conductive membrane 6 can pass. As the mesh portion 72, for example, a metal mesh such as an insulating stainless steel mesh, or a synthetic fiber mesh such as a polyester mesh can be used. Note that the mesh portion 72 can have a known configuration, and therefore a detailed description thereof will be omitted.

[0104] The covering member 70 may include other porous members instead of the net-like mesh portion 72. For example, the covering member 70 may be a member having lattice-like or dot-like openings, or may be a shape having random pores such as a porous film or a porous plate.

[0105] As shown in FIG. 16 , the covering portion 74 is provided on the surface of the mesh portion 72 facing the current-carrying portion 136. Specifically, the covering portion 74 is made of a material such as chemical-resistant silicone rubber or fluororubber, or a photosensitive resin material (emulsion) with a chemical-resistant coating, and is applied as a thin film to the surface of the mesh portion 72 facing the current-carrying portion 136. The covering portion 74 has a pattern formed thereon for selectively plating the portions to be plated by exposure and development. With this configuration, the plating processing device 1 can selectively plate only the plating-processing portions of the plating-forming surface 136 a of the current-carrying portion 136 and the surface E of the workpiece C that are not covered by the covering portion 74.

[0106] When plating is performed by placing the workpiece C on the plating formation surface 136a of the current-carrying part 136, the pattern of the covering part 74 is formed, for example, in the same shape as the through-hole, such as a circle, so that the part to be plated overlaps with the through-hole of the workpiece C, and the opening area of ​​the part to be plated is the same as or slightly larger than the opening area of ​​the through-hole. Furthermore, when plating is performed without placing the workpiece C on the plating formation surface 136a of the current-carrying part 136, as will be described later, the pattern of the covering part 74 is formed in the shape of a desired circuit pattern or the like.

[0107] It is also possible to form a pattern of the covering portion 74 so as to cover, as a non-plated portion, through holes inside which it is not desired to form plating P, or to form a pattern of the covering portion 74 so as to cover, as a non-plated portion, a pattern already formed on the workpiece C. Furthermore, since a known configuration can be adopted for the covering portion 74, detailed description thereof will be omitted.

[0108] The cover member frame has an attachment opening for attaching the mesh portion 72, and is configured, for example, in a square shape. In the second embodiment, the cover member frame is attached to the lower part (clamp portion 39) of the housing 4 or the surface facing the conductive portion 136 of the drainage flow path forming means 60. In other words, the mesh portion 72 is arranged between the cover member frame and the conductive portion 136 of the drainage flow path forming means 60 while being supported by the cover member frame.

[0109] However, the present invention is not limited to this, and the covering member 70 may be placed on the workpiece C or the current-carrying part 136, or the covering member frame may be attached to the peripheral edge part 124 of the tray 102. Note that the drainage flow path forming means frame can have a known configuration, and therefore detailed description thereof will be omitted.

[0110] The covering member 70 may also be an insulating metal mask. If the metal mask is made of a metal material with a passive film on its surface, it is possible to suppress the adhesion of the plating P, so insulating treatment is not necessary. Note that the metal mask may have a known configuration, and therefore a detailed description thereof will be omitted.

[0111] [Plating method according to the second embodiment] Here, a plating method using a plating processing device 1 according to a second embodiment will be described with reference to FIG. 13 . Descriptions overlapping with those of the plating method according to the first embodiment will be omitted where appropriate. In the plating method according to the second embodiment, as shown in FIG. 16 , the workpiece C is placed on the plating formation surface 136a of the current-carrying unit 136, and a pattern plating process is performed in which a plating P is formed on the plating formation surface 136a while the non-plated portions of the plating formation surface 136a of the current-carrying unit 136 and the non-plated portions of the workpiece C are covered by a covering member 70 provided between the drainage flow path forming means 60 and the current-carrying unit 136. Furthermore, in the plating method according to the second embodiment, in the pressing step, the workpiece C having a through hole formed therein is pressed against the plating formation surface 136a of the current-carrying unit 136 by the covering member 70.

[0112] Next, a plating method according to the second embodiment will be described in detail. The pattern of the covering portion 74 of the covering member 70 is formed in the same shape as the through-hole, such as a circle, so that the plating portion overlaps the through-hole of the workpiece C, and the opening area of ​​the plating portion is approximately one size larger than the through-hole, but this is not limiting.

[0113] The plating method according to the second embodiment, like the plating method using the plating processing device 1 according to the first embodiment, applies a voltage between the electrode 20 and the conductive part 136 by the power supply unit 7 while the electrolyte in the liquid chamber 3 is pressurized, and performs a plating process in which metal ions are deposited on the plating formation surface 136a of the conductive part 136 to form a metal coating (plating P).

[0114] Specifically, first, plating P is formed on the portion of plating formation surface 136a that is exposed from the through-hole of workpiece C. Then, as the thickness of plating P increases, the through-hole of workpiece C is filled. Furthermore, by providing covering member 70, plating P is formed to a thickness equal to or greater than the thickness of workpiece C, as shown in FIG. 17. Then, the through-hole of workpiece C is filled with plating P, and metal pillars (conductive pillars) of metal ions precipitated in the through-hole are formed. The formed metal pillars have a shape that rises up to the surface E of workpiece C.

[0115] [First Modification of the Plating Method According to the Second Embodiment] Next, a first modified example of the plating method according to the second embodiment will be described. The first modified example of the plating method according to the second embodiment is generally shown in Fig. 18, in which a pattern plating process is performed in which a plating P is formed on the plating formation surface 136a of the current-carrying part 136, without the workpiece C being placed on the plating formation surface 136a of the current-carrying part 136, and in a state in which the non-plated portion of the plating formation surface 136a of the current-carrying part 136 is covered by a covering member 70 provided between the drainage flow path forming means 60 and the current-carrying part 136.

[0116] A second modified example of the plating method according to the second embodiment will now be described in detail. First, as a preliminary step to the pattern plating process, the user sets the tray 102 on which the current-carrying member 136 is placed on the mounting base 104 while the housing 4 is separated from the mounting base 104 (original position). As shown in FIG. 18 , the user also sets the covering member 70 having the covering member 74 corresponding to the pattern of the plating P to be formed on the plating formation surface 136a of the current-carrying member 136. Thereafter, the moving mechanism lowers the housing 4 to the processing position, and the ion conductive membrane 6 is brought into contact with the plating formation surface 136a of the current-carrying member 136 (contact step).

[0117] Next, while the electrolyte in the liquid chamber 3 is pressurized by the pressurizing mechanism 30, the flow path opening / closing valve is opened and the pressure reduction flow path 48 is reduced by opening it to the atmosphere, etc., so that the electrolyte that has seeped out to the conductive portion 136 side of the ion conductive membrane 6 is drained through the drainage flow path 64 and the pressure reduction flow path 48 (under-membrane drainage process).

[0118] This under-membrane drainage step allows the drainage flow path forming means 60 to perform its drainage function, and the covering member 70 comes into close contact with the plating formation surface 136a of the current-carrying part 136. After the under-membrane drainage, the covering member 70 comes into close contact with the plating formation surface 136a of the current-carrying part 136, and the covering member 70 is pressed against the plating formation surface 136a of the current-carrying part 136 (pressing step). Thereafter, while the electrolyte in the liquid chamber 3 is pressurized, the power supply unit 7 applies a voltage between the electrode 20 and the current-carrying part 136. Then, with the non-plated portion of the plating formation surface 136a covered by the covering part 74 of the covering member 70, a plating process is performed in which metal ions are deposited on the plating formation surface 136a of the current-carrying part 136 to form a metal coating (plating P).

[0119] Specifically, the electrolyte solution seeping out from the ion conductive membrane 6 seeps out from the mesh of the mesh portion 72 of the covering member 70, in areas not covered by the covering portion 74, onto the plating formation surface 136a of the current-carrying portion 136. Then, as shown in FIG. 19a, plating P is formed on the plating treatment portions of the plating formation surface 136a that are not covered by the covering portion 74 of the covering member 70 (portions that overlap with areas where the covering portion 74 is not applied). Then, a thin film of plating P is formed on the plating formation surface 136a of the current-carrying portion 136. Through the above steps, pattern plating is performed by the plating processing device 1 according to the second embodiment.

[0120] 19b, in a plating removal step, one or more platings P formed according to the pattern of the covering portion 74 are removed from the plating-forming surface 136a. Various methods can be used to remove the plating P, such as picking it up with a tool, transferring it to tape, or embedding it in a resin sheet material. The removed plating P may be attached to an insulating substrate or the like, as in the second and third modified examples described below, or may be used for a variety of other purposes.

[0121] [Second Modification of the Plating Method According to the Second Embodiment] Next, a second modified example of the plating method according to the second embodiment will be described. In the second modified example of the plating method according to the second embodiment, generally, pattern plating is performed multiple times so that at least a portion of the plating P overlaps, and a single plating pattern PP is formed by the multiple pattern plating processes. Furthermore, in the second modified example of the plating method according to the second embodiment, the plating pattern PP peeled from the plating formation surface 136a in the plating peeling step is attached to an insulating base material.

[0122] In the second modification of the second embodiment, the insulating substrate is an insulating sheet IS formed as a thin film, but is not limited to this and may be an insulating substrate such as a printed circuit board.

[0123] A second modification of the plating method according to the second embodiment will now be described in detail. Note that the order in which the pattern plating process is performed multiple times is not limited to the following order, and various arbitrary orders are possible.

[0124] A second modified example of the plating method according to the second embodiment will now be described in detail. First, as a preliminary step to the pattern plating process, the user sets the tray 102 on which the current-carrying portion 136 is placed on the mounting base 104 while the housing 4 is separated from the mounting base 104 (original position). The user also sets the covering member 70 having the covering portion 74 that matches the first pattern of the plating P to be formed on the plating formation surface 136a of the current-carrying portion 136. Then, as described above, the first pattern plating process is performed by the plating processing apparatus 1 according to the second embodiment, and the plating P having the first pattern is formed on the plating formation surface 136a of the current-carrying portion 136, as shown in FIG. 20a.

[0125] After the separation step, the user sets a covering member 70 having a covering portion 74 that matches the second pattern of the plating P to be formed on the plating formation surface 136a of the current-carrying portion 136. Then, similar to the first pattern plating process, a second pattern plating process is performed by the plating processing apparatus 1 according to the second embodiment. The second pattern plating process is performed so that at least a portion of the plating P having the second pattern overlaps with the plating P having the first pattern formed in the first pattern plating process, as shown in FIG. 20b.

[0126] A method for performing pattern plating so that at least a portion of the plating P having the second pattern overlaps with the plating P having the first pattern includes, for example, using a covering member 70 having a covering portion 74 in which the second pattern is provided at a position at least partially overlapping with the first pattern, but is not limited to this.

[0127] For example, by changing the position of the current-carrying portion 136 between the first pattern processing and the second pattern plating processing, the pattern plating processing may be performed so that at least a portion of the plating P having the second pattern overlaps with the plating P having the first pattern. Furthermore, by changing the position of the covering member 70 between the first pattern processing and the second pattern plating processing, the pattern plating processing may be performed so that at least a portion of the plating P having the second pattern overlaps with the plating P having the first pattern.

[0128] As shown in Fig. 20c, the second pattern plating process further forms plating P having a second pattern on the plating formation surface 136a of the current-carrying portion 136. Thereafter, as shown in Fig. 20d, a third pattern plating process is performed. The third pattern plating process is performed so that at least a portion of the plating P having the third pattern overlaps with the plating P having the second pattern formed in the second pattern plating process.

[0129] Since the third pattern and the second pattern have the same shape and differ only in the position where the plating P is formed, as described above, the same covering member 70 can be used when performing the pattern plating process by moving the position of the current-carrying portion 136 or the covering member 70 so that part of the plating P overlaps.

[0130] Similarly, as shown in Fig. 20e, a fourth pattern plating process is performed so that the plating P to be formed overlaps at least a portion of the plating P having the first pattern. In this way, the pattern plating process is performed multiple times so that at least a portion of the plating P overlaps, and one plating pattern PP is formed on the plating formation surface 136a of the current-carrying part 136 as shown in Fig. 20f.

[0131] After the plating pattern PP is formed, in a plating peeling step, the plating pattern PP is peeled off from the plating formation surface 136a of the current-carrying part 136. Then, as shown in Fig. 21, the user attaches the plating pattern PP peeled off from the plating formation surface 136a to an insulating sheet IS.

[0132] The shapes of the plating P and plating pattern PP are not limited to those shown in FIGS. 20 and 21, and various arbitrary shapes can be adopted.

[0133] [Third Modification of the Plating Method According to the Second Embodiment] Next, a third modified example of the plating method according to the second embodiment will be described. In the third modified example of the plating method according to the second embodiment, the pattern plating process is performed multiple times, and the formed multiple platings P are peeled off from the plating formation surface 136a and attached to the insulating base material so that at least a portion of the platings P overlap each other.

[0134] In the third variant of the second embodiment, the insulating substrate is an insulating sheet IS formed into a thin film, as in the second variant, but is not limited to this and may be an insulating substrate that has been subjected to an insulating treatment, such as a printed circuit board.

[0135] The third modified example, like the second modified example, performs pattern plating multiple times. However, while the second modified example performs pattern plating multiple times to form a plating pattern PP on the plating formation surface 136a of the current-carrying portion 136, the plating pattern PP is then peeled off from the plating formation surface 136a and attached to an insulating sheet IS, the third modified example differs in that, as shown in Fig. 22, the plating P formed on the plating formation surface 136a of the current-carrying portion 136 is peeled off, multiple platings P are attached to the insulating sheet IS so that at least a portion of the plating P overlaps, and the plating pattern PP is formed on the insulating sheet IS.

[0136] In the third modification, as in the second modification, the pattern plating process may be performed multiple times so that at least a portion of the plating P overlaps, and after forming a partial plating pattern PP, the plating pattern PP may be repeatedly attached to the insulating sheet IS, thereby forming the plating pattern PP. Also, as in the second modification, the shapes of the plating P and plating pattern PP are not limited to those shown in Fig. 22, and various arbitrary shapes may be adopted.

[0137] In the first to third modified examples of the plating method according to the second embodiment described above, the drainage flow path forming means 60 does not have to have the opening 62, as shown in FIG.

[0138] [Advantages of the plating processing apparatus and plating method according to the second embodiment] Like the plating processing device 1 according to the first embodiment, the plating processing device 1 according to the second embodiment is a plating processing device that can realize a novel plating process in which a plating P is formed on the plating formation surface 136a of the current-carrying part 136 without performing any pre-treatment steps for plating, and the plating P is peeled off from the plating formation surface 136a. The plating processing device 1 according to the second embodiment can form the plating P accurately in a short time by forming the plating P on the peelable plating formation surface 136a of the current-carrying part 136. The plating processing device 1 according to the second embodiment also has the advantage of being able to perform various plating processes and form the plating P that could not be achieved with conventional plating processing devices.

[0139] Furthermore, in the plating processing device 1 of the second embodiment, like the plating processing device 1 of the first embodiment, the drainage flow path forming means 60 removes the liquid layer that forms under the ion conductive membrane 6, thereby generating a sufficient pressure difference between the inside of the liquid chamber 3 and under the membrane, making it possible to bring the ion conductive membrane 6 and the plating formation surface 136a of the conductive part 136 close enough to each other so that the plating P can be formed, thereby having the advantage of being able to form the plating P accurately in a short period of time.

[0140] Furthermore, like the plating processing device 1 of the first embodiment, when forming plating P in the through hole of the workpiece C, the plating processing device 1 of the second embodiment can adhere the ion conductive membrane 6 to the surface E of the workpiece C so that the workpiece C is pressed against the plating formation surface 136a by the pressure of the electrolyte in the liquid chamber 3, thereby having the advantage of suppressing the electrolyte from seeping onto the back surface of the workpiece C (the surface on the plating formation surface 136a side) and enabling the plating P to be formed accurately in the through hole.

[0141] Furthermore, in the plating processing device 1 according to the second embodiment, the plating forming surface 136a is formed using a material selected from material A (a material having a passive film), material B (a conductive oxide film), material C (a carbon allotrope material), and material D (a material having a noble ionization tendency), as in the plating processing device 1 according to the first embodiment, thereby providing the further advantage of ensuring the peelability of the plating P from the plating forming surface 136a.

[0142] Furthermore, in the plating processing apparatus 1 according to the second embodiment, similar to the plating processing apparatus 1 according to the first embodiment, the drainage flow path forming means 60 is formed in a mesh pattern, which allows a thin drainage flow path 64 to be formed between the ion conductive membrane 6 and the current-carrying part 136, thereby improving the accuracy of the plating processing while maintaining the short processing time that is an advantage of plating processing via the ion conductive membrane 6. Furthermore, similar to the plating processing apparatus 1 according to the first embodiment, the plating processing apparatus 1 according to the second embodiment allows the drainage flow path forming means 60 to be realized with simple components without increasing the size and complexity of the plating processing apparatus 1, thereby improving the accuracy of the plating processing while keeping facility costs low.

[0143] Furthermore, like the plating processing device 1 of the first embodiment, the plating processing device 1 of the second embodiment further includes a base portion (tray 102 in the first embodiment) on which the current-carrying unit 136 is attached, and the current-carrying unit 136 is configured to be detachable from the base portion (tray 102). This means that even if the plating forming surface 136a becomes worn or soiled, the current-carrying unit 136 having the plating forming surface 136a can be easily replaced, thereby providing the further advantage of preventing a decrease in the accuracy of the plating process due to wear of the plating forming surface 136a, etc.

[0144] Furthermore, like the plating processing apparatus 1 according to the first embodiment, the plating processing apparatus 1 according to the second embodiment further includes an insulating member 65 provided on the peripheral portion of the surface of the drainage flow path forming means 60 facing the current-carrying member 136. This provides an additional advantage of preventing the peripheral portions of the ion conductive membrane 6 and the drainage flow path forming means 60 from being pinched and damaged in the gap between the housing 4 and the current-carrying member 136 or the mounting table 100 at the processing position. Similarly to the plating processing apparatus 1 according to the first embodiment, the plating processing apparatus 1 according to the second embodiment also provides an additional advantage of preventing the plating solution from seeping between the current-carrying member 136 and the tray 102, which could result in the back side of the current-carrying member 136 and the tray current-carrying member 130 being plated and becoming contaminated or losing conductivity. After plating formation, the workpiece C and the current-carrying member 136 are wet with the electrolyte, so the workpiece C and the current-carrying member 136 are in a water-logged state, making it difficult to peel the plating P from the plating formation surface 136a in situ while the current-carrying member 136 is attached to the plating processing apparatus 1. Therefore, the ability to remove the current-carrying part 136 from the base part (tray 102) offers the additional advantage of facilitating peeling of the plating P. Also, it makes it easier to handle fragile workpieces C, such as film-like workpieces C and thin glass. Another advantage is improved workability when attaching the plating P or plating pattern PP to an insulating substrate.

[0145] Furthermore, the plating processing apparatus 1 according to the second embodiment further includes a covering member 70 for covering the non-plated portions, and the covering member 70 is provided between the drainage flow path forming means 60 and the current-carrying unit 136. This configuration eliminates the need for a step of removing the plating P formed on the non-plated portions, providing the additional advantage of preventing damage to the plating P in the plated portion when removing the plating P formed on the non-plated portions. Furthermore, the covering member 70 prevents the plating P from digging into the drainage flow path forming means 60 and damaging the drainage flow path forming member 60 when the plating P is formed thicker than the surface E of the workpiece C.

[0146] Furthermore, the plating method according to the second embodiment includes a pressing step in which the workpiece C having through holes formed therein is pressed against the plating formation surface 136a of the current-carrying portion 136 by the covering member 70, a pressing step, a voltage application step, and a plating peeling step. Therefore, similar to the plating method according to the first embodiment, the plating P is formed in the through holes of the workpiece C while preventing bleeding onto the back surface (the surface on the plating formation surface 136a side) of the workpiece C, thereby providing the advantage of accurate formation of the plating P. Furthermore, similar to the plating method according to the first embodiment, the plating method according to the second embodiment has fewer steps for forming the plating P in the through holes and a shorter plating time than conventional methods for manufacturing wiring substrates, thereby providing the advantage of efficient production of wiring substrates in a short time using the workpiece C (insulating substrate) having through holes.

[0147] Specifically, for example, the method for manufacturing a wiring substrate described in Patent Document 1 requires two plating steps: a step of arranging an insulating substrate and an anode so that the surface of the insulating substrate on which a seed layer is formed faces the anode, and then performing electroplating; and a step of blocking the through holes in the surface on which the seed layer is formed with a metal layer, and then arranging the insulating substrate and the anode so that the surface from which the masking film has been removed faces the anode, and then performing electroplating. On the other hand, the plating method according to the second embodiment has the advantage that, like the plating method according to the first embodiment, the plating step requires only a voltage application step.

[0148] Furthermore, similar to the plating method according to the first embodiment, the plating formation surface 136a of the current-carrying part 136 serves as a seed layer, and the plating P is formed from the plating formation surface 136a in one direction within the through-hole of the workpiece C (toward the ion conductive membrane 6 in the first embodiment). This makes it difficult for voids to occur inside the plating P, and has the advantage that pre-treatment steps for plating, such as the step of forming a seed layer on the workpiece C and the step of covering and removing a masking film, can be omitted.

[0149] Furthermore, the plating method according to the second embodiment performs pattern plating in which plating P is formed on the plating formation surface 136a while the non-plated portions are covered with a covering member 70 provided between the drainage flow path forming means 60 and the current-carrying unit 136. This configuration eliminates the need for a step of removing plating P from the non-plated portions, further advantageously preventing damage to the plating P in the plated portion when removing the plating P from the non-plated portions. Furthermore, by providing a distance between the drainage flow path forming means 60 and the workpiece C using the covering member 70, plating P with a thickness equal to or greater than the thickness of the workpiece C can be formed in the through-hole, and the portion protruding from the workpiece C can be polished to form plating P exactly to the thickness of the workpiece C.

[0150] Furthermore, the plating method according to the second embodiment performs pattern plating multiple times so that at least a portion of the plating P overlaps, forming a single plating pattern PP through multiple pattern plating processes. This configuration offers the additional advantage of being able to combine the formation of plating P with simple shapes to form a plating pattern PP, or to form a plating pattern PP with a complex pattern that cannot be formed in a single plating process. Generally, wiring boards are fabricated by etching a copper-clad laminate to form circuit areas. However, when a large wiring board has few circuit areas, much of the copper is dissolved by etching and discarded. On the other hand, the plating method according to the second embodiment allows for the formation of only the circuit area (plating pattern PP) from the beginning, thereby offering the additional advantage of reducing the amount of copper used and discarded.

[0151] In addition, in the plating method according to the second embodiment, the plating pattern PP peeled from the plating formation surface 136a is attached to an insulating base material. This configuration has the advantage that the plating pattern PP can be provided on an insulating base material without through-holes without forming a conductive seed layer.

[0152] Furthermore, the plating method according to the second embodiment performs pattern plating multiple times, peels the formed platings P from the plating formation surface 136a, and attaches the platings P to the insulating base material so that at least a portion of the platings P overlap. This configuration, for example, eliminates the need to adjust the position of the patterns of the multiple covering members 70 or the positions of the conductive portions 136 and the covering member 70 themselves to form the platings P so that they overlap. This has the advantage of facilitating the formation of multiple platings P. Furthermore, while circuit sections are typically fabricated in wiring boards by etching copper-clad laminates, large wiring boards with few circuit sections result in a large amount of copper being dissolved and discarded. On the other hand, the plating method according to the second embodiment forms multiple platings P that constitute the circuit section and attaches the platings P to the insulating base material to form the circuit section, thereby reducing the amount of copper used and discarded.

[0153] Furthermore, in the plating method according to the second embodiment, the drainage flow path forming means 60, like the plating method according to the first embodiment, has one or more openings 62 whose opening area is equal to or larger than the opening area of ​​the through-hole in the workpiece C, and the drainage flow path forming means 60 is arranged so that the through-hole in the workpiece C and the opening 62 of the drainage flow path forming means 60 overlap. This allows the ion conductive membrane 6 to be closer to the plating formation surface 136a than when a drainage flow path forming means 60 without an opening 62 is used, which has the further advantage that the through-hole can be filled with plating P even in a thick workpiece C. Furthermore, because the drainage flow path forming means 60 is arranged so that the opening 62 overlaps the through-hole in the workpiece C, the vicinity of the through-hole in the workpiece C can be pressed against the plating formation surface 136a of the current-carrying part 136 even when the drainage flow path forming means 60 has the opening 62.

[0154] [Variations] Although the preferred embodiments of the present invention have been described above, the technical scope of the present invention is not limited to the scope described in the above-described embodiments. Various modifications and improvements can be made to the above-described embodiments.

[0155] For example, in the first and second embodiments, the plating surface 136a has been described as being formed using a material selected from material A (a material having a passive film), material B (a conductive oxide), material C (a carbon allotrope), and material D (a material with a noble ionization tendency), but is not limited to this. The plating surface 136a may be made of any of a variety of materials as long as it is conductive and allows the plating P formed on the plating surface 136a to be peeled off. For example, the plating surface 136a may be made of carbon steel, solder, iridium oxide, conductive ink, a conductive coating agent, or the like.

[0156] In the first and second embodiments, the drainage flow path forming means 60 has been described as being formed in a mesh shape, but is not limited to this. Any of a variety of configurations can be adopted as long as the drainage flow path 64 for draining the liquid that has passed through the ion conductive membrane 6 is formed between the ion conductive membrane 6 and the current-carrying part 136, and the configuration is capable of draining the liquid that has passed through the ion conductive membrane 6. For example, the drainage flow path forming means 60 may be a porous body such as a porous membrane or a sintered body.

[0157] In the first and second embodiments, the plating processing apparatus 1 has been described as further including a base unit (tray 102 in the first and second embodiments) on which the current-carrying unit 136 is attached, and the current-carrying unit 136 is configured to be detachable from the base unit (tray 102). However, this is not limiting. The mounting table 100 of the plating processing apparatus 1 may not include the tray 102, and the mounting base 104 may function as the base unit on which the current-carrying unit 136 is attached. Alternatively, the current-carrying unit 136 may be fixed to the tray 102 or the mounting base 104.

[0158] In the first and second embodiments, the plating processing apparatus 1 has been described as further including the insulating member 65 provided on the peripheral edge of the surface of the drainage flow path forming means 60 facing the current-carrying portion 136. However, this is not limited thereto, and the plating processing apparatus 1 may not include the insulating member 65. In particular, in the second embodiment, the plating processing apparatus 1 includes the covering member 70, and the covering portion 74 of the covering member 70 functions as the insulating member 65, so that the insulating member 65 may not be provided separately from the covering member 70. Furthermore, when a plurality of workpieces C are placed on the plating formation surface 136a of the current-carrying portion 136 for plating, the insulating member 65 may be provided not only on the peripheral edge of the surface of the drainage flow path forming means 60 facing the current-carrying portion 136, but also on the peripheral edge of each workpiece C. In other words, the insulating member 65 may be formed in a lattice shape having a plurality of openings corresponding to the arrangement of the workpieces C, rather than in a square shape.

[0159] In the second embodiment, the plating processing device 1 further includes a covering member 70 for covering the non-plated portion, and the covering member 70 is described as being provided between the drainage flow path forming means 60 and the conductive section 136, but this is not limited to this, and the plating processing device 1 does not necessarily need to include the covering member 70.

[0160] The plating method according to the first embodiment has been described as integrating the workpiece C placed on the current-carrying unit 136 with the plating P and then peeling off a composite material CM of the workpiece C and the plating P from the plating formation surface 136a, but is not limited to this. The plating method according to the first embodiment can also form the plating P on the plating formation surface 136a of the current-carrying unit 136 without placing the workpiece C on the plating formation surface 136a. Furthermore, the plating method according to the first embodiment has been described as integrating the workpiece C formed in a mesh shape with the plating P in the voltage application step and peeling off the composite material CM of the workpiece C and the plating P from the plating formation surface 136a in the plating peeling step, but is not limited to this. The plating method according to the first embodiment can integrate various arbitrary workpieces C and the plating P to produce composite materials of the workpiece C and the plating P. Furthermore, according to the plating method of the first embodiment, it is possible to produce various composite materials CM, such as a composite material CM of metal fibers and plating P, a composite material CM of glass fibers and plating P, a composite material CM of carbon fibers and plating P, a composite material CM of chemical fibers and plating P, and a composite material CM of nonwoven fabric and plating P.

[0161] The plating method according to the first embodiment has been described as including a pressing step in which the workpiece C having a through-hole formed therein is pressed against the plating formation surface 136a of the current-carrying part 136 by at least one of the ion conductive membrane 6 and the drainage flow path forming means 60, a voltage application step in which a voltage is applied between the electrode 20 and the current-carrying part 136 to form a plating P in the through-hole of the workpiece C, and a plating removal step in which the plating P formed in the through-hole is removed from the plating formation surface 136a, but is not limited to this.

[0162] The plating method according to the second embodiment has been described as a pattern plating process in which a plating P is formed on the plating formation surface 136a while the non-plated portion is covered by a covering member 70 provided between the drainage flow path forming means 60 and the current-carrying unit 136. However, this is not limiting. As described in the first embodiment, the plating P may be formed without covering the non-plated portion with the covering member 70. Alternatively, the plating P may be formed directly on the entire plating formation surface 136a without covering the non-plated portion with the covering member 70. The plating method according to the second embodiment may also involve placing a metal plate as the first workpiece C on the plating formation surface 136a of the current-carrying unit 136, placing one or more particles as the second workpiece C and the covering member 70, which functions as a covering member for the first workpiece C and a positioning member for the second workpiece C, on the first workpiece C, and performing plating to produce a composite material CM composed of the first workpiece C, the second workpiece C, and the plating P. Note that any of a variety of particles can be used as the second workpiece C as long as they do not interfere with the plating process, and examples of such particles include various compound particles such as oxides, nitrides, and carbides, metal particles, carbon isotope particles, powdered resins, etc. Furthermore, the second workpiece C is not limited to particles, and any of a variety of materials can be used as long as they can be bonded to the first workpiece C by plating.

[0163] In the plating method according to the second embodiment, the pattern plating process is performed multiple times so that at least a portion of the plating P overlaps, and a single plating pattern PP is formed by the multiple pattern plating processes. However, this is not limited to this. In the plating method according to the second embodiment, the pattern plating process does not have to be performed multiple times. Alternatively, the pattern plating process may be performed multiple times so that the plating P does not overlap.

[0164] The plating method according to the second embodiment has been described as attaching the plating pattern PP peeled off from the plating formation surface 136a to an insulating substrate, but is not limited to this, and the plating pattern PP peeled off from the plating formation surface 136a does not have to be attached to an insulating substrate.

[0165] The plating method according to the second embodiment has been described as a method of performing pattern plating multiple times, peeling the formed platings P from the plating formation surface 136a, and attaching the platings P to the insulating base material so that at least a portion of the platings P overlap, but is not limited to this. The platings P may also be attached to the insulating base material so that they do not overlap.

[0166] In the plating methods according to the first and second embodiments, the drainage flow path forming means 60 has one or more openings 62 whose opening area is equal to or larger than the opening area of ​​the through-holes in the workpiece C, and is provided so that the through-holes in the workpiece C overlap with the openings 62 of the drainage flow path forming means 60. However, this is not limiting. The drainage flow path forming means 60 does not have to have the openings 62. When the drainage flow path forming means 60 does not have the openings 62, the drainage flow path forming means 60 also functions as a support member for the ion conductive membrane 6, and can protect the ion conductive membrane 6 from damage due to deformation caused by pressure application or damage due to contact with the surface E of the workpiece C, specifically the corners of the through-holes. Furthermore, by positioning the drainage flow path forming means 60 near the through-holes of the workpiece C, it becomes easier to apply pressure to the workpiece C, and there is less seepage of the electrolyte onto the back surface (the surface on the plating formation surface 136a side) of the workpiece C, which has the advantage of enabling more accurate formation of the plating P. Furthermore, by employing a mesh member with wide openings (wire diameter) for the drainage flow path forming means 60, it becomes possible to fill the through-holes of a thick workpiece C with the plating P even if it does not have openings 62.

[0167] In the second embodiment, the covering member 70 has been described as being provided separately from the drainage flow path forming means 60, but this is not limiting. The covering member 70 may be provided on the surface of the drainage flow path forming means 60 facing the current-carrying section 136. That is, the covering member 70 may be made of chemical-resistant silicone rubber, fluororubber, or a photosensitive resin material (emulsion) with a chemical-resistant coating, and may be applied as a thin film on the surface of the net-shaped drainage flow path forming means 60 facing the current-carrying section 136. Furthermore, when the covering member 70 is provided separately from the drainage flow path forming means 60, the covering member 70 may be a film mask.

[0168] The plating processing apparatus 1 and plating method according to the first and second embodiments have been described assuming that they are used for manufacturing wiring substrates, but are not limited to this and can be used for a variety of arbitrary applications, such as forming plating P on electronic components such as capacitors, inductors, and LEDs, and forming decorative plating P and plating patterns PP.

[0169] In the first and second embodiments, the discharge flow path forming means 60 has been described as being disposed between the ion conductive membrane 6 and the current-carrying part 136 by being attached to the bottomed cylindrical opening of the housing 4 via the discharge flow path forming means frame, but this is not limiting. The discharge flow path forming means 60 may be disposed between the ion conductive membrane 6 and the current-carrying part 136 by being placed on the tray 102 of the mounting table 100. In the second embodiment, when the discharge flow path forming means 60 is placed on the tray 102, the covering member 70 is also placed on the tray 102.

[0170] In the first and second embodiments, the plating processing apparatus 1 has been described as being configured such that the clamp 39 of the housing 4 and the mounting base 104 of the mounting table 100 are fitted together, but this is not limiting. The plating processing apparatus 1 may also be configured such that the clamp 39 and the mounting base 104 are not fitted together, and the lower end of the clamp 39 is in liquid-tight contact with the upper surface of the mounting base 104. In particular, in the second and third modified examples of the plating method according to the second embodiment, it is preferable that the plating processing apparatus 1 have such a configuration in order to shorten the time required for one cycle of pattern plating.

[0171] In the first and second embodiments described above, the energizer 136 is described as being connected from the rear surface of the energizer 136 to the electrode portion of the mounting base 104, and ultimately to the negative pole (- pole) of the power supply unit 7, via the tray energizer 130. However, the plating processing apparatus 1 may be configured such that the energizer 136 is connected from the front surface of the energizer 136 to the electrode portion of the mounting base 104. [Explanation of symbols]

[0172] 1. Plating processing equipment 3 Liquid chamber 4. Housing 6 Ion-conducting membrane 7 Power supply section 8 Support base 20 electrodes 30 Pressure Mechanism 31 Discharge flow path 35 Holding jig 36 Inner frame membrane jig 37 Outer frame film jig 39 Clamp section 47 On-off valve 48 Pressure reducing channel 60 Drainage flow path forming means 62 Aperture 64 drainage channel 65 Insulating material 70 Covering material 72 Mesh section 74 Covering part 100 Mounting table 102 Tray 104 Mounting base 120 Base 122 Placement section 124 Periphery 126 Through hole 127 O-ring 128 Through hole for removing live parts 130 Tray current-carrying part 136 Electrical Part 136a Plated surface 142 Tray positioning member BS Opposite side C. Processing object CM composite material E surface IS insulation sheet P plating PP plating pattern PS mounting surface

Claims

1. a housing having an opening and an electrode disposed therein; an ion conductive membrane provided to close the opening of the housing and forming a liquid chamber together with the housing; a current-carrying portion having a plating forming surface on which plating is formed; a drainage flow path forming means that is disposed between the ion conductive membrane and the current-carrying portion and that forms a drainage flow path between the ion conductive membrane and the current-carrying portion to drain the liquid that has passed through the ion conductive membrane; Equipped with a voltage is applied between the electrode and the current-carrying part, whereby the plating is formed on the plating formation surface by electrolysis via the ion conductive membrane; The plating surface is electrically conductive and configured so that the plating formed on the plating surface can be peeled off. The plating processing apparatus is characterized by the above.

2. The plating surface is a material having a passive film; Conductive oxide film, Carbon allotrope materials, and Materials with noble ionization tendency formed using a material selected from 2. The plating processing apparatus according to claim 1, wherein the plating processing apparatus is a plating processing apparatus.

3. The drainage flow path forming means is formed in a mesh shape.

3. The plating processing apparatus according to claim 1 or 2.

4. Further provided is a base portion for mounting the current-carrying portion, The current-carrying unit is configured to be detachable from the base unit.

3. The plating processing apparatus according to claim 1 or 2.

5. The discharge passage forming means may further include an insulating member provided on a peripheral edge of a surface thereof facing the conductive portion.

3. The plating processing apparatus according to claim 1 or 2.

6. Further provided is a covering member for covering the non-plated portion, The covering member is provided between the drainage flow path forming means and the conductive part.

3. The plating processing apparatus according to claim 1 or 2.

7. A plating method using the plating processing device according to claim 1, A voltage is applied between the electrode and the current-carrying part to form a plating on the plating-forming surface by electrolysis via the ion-conductive membrane, and then the plating formed on the plating-forming surface is peeled off. A plating method characterized by:

8. The workpiece placed on the current-carrying portion is integrated with the plating, and the composite material of the workpiece and the plating is peeled off from the plating-formed surface.

8. The plating method according to claim 7.

9. a pressing step of pressing the workpiece having the through-holes formed therein against the plating surface of the conductive portion by at least one of the ion conductive membrane and the drainage flow path forming means; a voltage application step of applying a voltage between the electrode and the current-carrying portion to form plating in the through hole of the object to be treated; a plating removal step of removing the plating formed in the through hole from the plating-formed surface; Equipped with 9. The plating method according to claim 8.

10. A pattern plating process is performed to form a plating on the plating surface while the non-plated portion is covered with a covering member provided between the drainage flow path forming means and the current-carrying portion. The plating method according to any one of claims 7 to 9.

11. The pattern plating process is performed multiple times so that at least a portion of the plating overlaps, and one plating pattern is formed by the multiple pattern plating processes. The plating method according to claim 10 .

12. The plating pattern peeled from the plating formation surface is attached to an insulating substrate. The plating method according to claim 11 .

13. The pattern plating process is performed a plurality of times, and the formed plurality of platings are peeled off from the plating formation surface, and the plurality of platings are attached to an insulating base material so that at least a portion of the platings overlap.

11. The plating method according to claim 10.

14. the drainage flow path forming means has one or more openings whose opening area is equal to or greater than the opening area of ​​the through hole of the treatment object, The drainage flow path forming means is provided so that the through hole of the object to be treated and the opening of the drainage flow path forming means overlap with each other.

9. The plating method according to claim 8.

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