Bonding device

Abstract

To improve the reliability of mounting through bonding and eutectic bonding.SOLUTION: A bonding device includes: a transport mechanism for transporting a substrate; a bonding tool for bonding an electronic component to the substrate; and an anti-oxidation path extending along the transport mechanism and having a wall surrounding the transport mechanism. Therein the anti-oxidation path includes: an inlet for introducing the substrate; an opening that allows the bonding tool and the substrate to approach to or move away from each other; a gas inlet for introducing an anti-oxidation gas inside the wall; and an electrode having a passage hole through which the anti-oxidation gas passes, inside the wall, the electrode converting the anti-oxidation gas into plasma when the anti-oxidation gas passes through the passage hole.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a bonding apparatus. [Background technology]

[0002] For example, Patent Document 1 discloses a die bonding apparatus that uses an air-shielding unit that maintains a sample transported by a substrate transport unit in an atmosphere (hereinafter referred to as an "inert atmosphere"), shielded from the outside air, in a gas atmosphere consisting of a mixture of an inert gas, such as nitrogen or argon, and a reducing gas, such as hydrogen. The apparatus includes a plasma processing unit that generates plasma at atmospheric pressure and treats the surface of the delivered solder line with the plasma. The apparatus guides the solder line, whose surface has been treated by the plasma processing unit, to a predetermined position on the sample in the inert atmosphere inside the air-shielding unit without exposing it to the outside air. In this way, the apparatus uses plasma to remove any oxide film formed on the surface of the solder line, and then mounts a semiconductor chip on the solder in an inert atmosphere to prevent oxidation, thereby improving the quality of the solder joint. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2013-21163 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the device described in Patent Document 1, when bonding is performed in the inert atmosphere of the air-blocking unit, it is difficult to obtain sufficient anti-oxidation and reduction effects in the inert atmosphere of the air-blocking unit, and the substrate, electronic components, and bonding materials may oxidize, resulting in reduced bonding reliability. Furthermore, when the semiconductor chip and substrate are heated and the semiconductor chip is mounted to the substrate by eutectic bonding, the substrate, for example, made of copper, may oxidize. If the semiconductor chip is eutectic bonded to an oxidized substrate, the bond between the substrate and semiconductor chip deteriorates, reducing the reliability of the bonded product.

[0005] The present invention has been made in view of the above circumstances, and has as its object to provide a bonding apparatus that can improve the reliability of mounting by bonding or eutectic bonding. [Means for solving the problem]

[0006] A bonding apparatus according to one aspect of the present invention comprises a transport mechanism for transporting a substrate, a bonding tool for bonding an electronic component to the substrate, and an anti-oxidation path extending along the transport mechanism and having a wall portion surrounding the transport mechanism, the anti-oxidation path having an inlet for introducing the substrate, an opening that allows the bonding tool and the substrate to approach and separate from each other, a gas inlet for introducing an anti-oxidation gas inside the wall portion, and an electrode having a passage hole inside the wall portion through which the anti-oxidation gas passes, and which plasma-izes the anti-oxidation gas passing through the passage hole in a plasma-generation region. [Effects of the Invention]

[0007] According to the present invention, it is possible to provide a bonding apparatus that can improve the reliability of mounting by bonding or eutectic bonding. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a perspective view showing a bonding apparatus according to an embodiment of the present invention; [Figure 2]FIG. 2 is a plan view of an anti-oxidation path according to an embodiment of the present invention. [Figure 3] FIG. 2 is a cross-sectional view of an anti-oxidation path according to an embodiment of the present invention. [Figure 4] FIG. [Figure 5] FIG. [Figure 6] 10 is a flowchart of the operation of the bonding apparatus. [Figure 7] FIG. 10 is a diagram showing a state during bonding processing. DETAILED DESCRIPTION OF THE INVENTION

[0009] The following describes embodiments of the present invention. In the following description of the drawings, the same or similar components are denoted by the same or similar reference numerals. The drawings are illustrative, and the dimensions and shapes of each part are schematic. The technical scope of the present invention should not be interpreted as being limited to the embodiments.

[0010] <<Configuration of Bonding Apparatus 10>> First, the configuration of a bonding apparatus 10 according to one embodiment of the present invention will be described with reference to Figures 1 to 3. Figure 1 is a perspective view showing a bonding apparatus 10 according to one embodiment of the present invention. Figure 2 is a plan view of an oxidation prevention path 100 according to one embodiment of the present invention.

[0011] The bonding device 10 has a configuration for converting an antioxidant gas into plasma within the space of the oxidation prevention path 100, and performs bonding within the space within the oxidation prevention path 100 filled with the plasmatized antioxidant gas (hereinafter referred to as "oxidation prevention plasma gas").

[0012] The antioxidant gas is, for example, a forming gas obtained by mixing an inert gas such as nitrogen with a reducing gas such as hydrogen, but is not limited thereto. For example, the antioxidant gas may be a mixture of helium gas and hydrogen gas, or a mixture of argon gas and hydrogen gas.

[0013] Such a bonding apparatus 10 can enhance the anti-oxidation and reduction effects in, for example, eutectic bonding compared to when a non-plasma anti-oxidation gas is filled in the space inside the anti-oxidation path 100. Therefore, the bonding apparatus 10 can achieve highly reliable bonding of a device in which an electronic component CH is bonded to a substrate SB.

[0014] Furthermore, the bonding apparatus 10 can enhance the anti-oxidation and reduction effects by converting the antioxidant gas into plasma, which makes it possible to reduce the hydrogen content of the antioxidant gas (or to make it contain only nitrogen), thereby reducing bonding costs.

[0015] As shown in Fig. 1, the bonding apparatus 10 includes an oxidation prevention path 100, a transport mechanism 200, a bonding tool 300, and an imaging unit 400. For convenience, Fig. 1 shows three orthogonal axes consisting of an X-axis, a Y-axis, and a Z-axis.

[0016] The X-axis direction is the direction in which the transport mechanism 200 transports the substrate SB, and the substrate SB is transported from the negative X-axis direction to the positive X-axis direction. The Y-axis direction, together with the X-axis direction, defines a plane along the pair of main surfaces SBa of the substrate SB being transported by the transport mechanism 20. The Z-axis direction is the vertical direction relative to the substrate SB being transported by the transport mechanism 20, and is the direction in which the bonded substrate SB and electronic components CH are aligned. The Y-axis direction is also perpendicular to the X-axis and Z-axis directions.

[0017] The same applies to the X-axis, Y-axis, and Z-axis indicated in each of the figures from Figure 2 onwards. In the following description, a plan view from the negative Z-axis direction side will simply be referred to as a "plan view". Also, the negative X-axis direction side may be expressed as the "front", the positive X-axis direction as the "rear", the negative Z-axis direction side as the "top", and the positive Z-axis direction side as the "bottom", but this does not limit the orientation of the bonding apparatus 10.

[0018] The bonding apparatus 10 bonds an electronic component CH to a substrate SB via a bonding member BM. The substrate SB has a main surface SBa, which is a bonding surface to which the electronic component CH is bonded.

[0019] The substrate SB is, for example, a copper (Cu) alloy-based lead frame, but is not limited to this. The substrate SB may also be, for example, an iron (Fe) alloy-based lead frame, a ceramic substrate, or a semiconductor substrate.

[0020] The electronic component CH is, for example, a semiconductor chip.

[0021] The bonding members BM are, for example, a gold-tin (Au—Sn) eutectic alloy. The bonding members BM may also be, for example, a gold-silicon (Au—Si) eutectic alloy, solder, an organic adhesive, or an inorganic adhesive.

[0022] The bonding apparatus 10 bonds the electronic component CH to the substrate SB in an anti-oxidation plasma gas atmosphere in the anti-oxidation channel 100 .

[0023] The bonding tool 300 bonds an electronic component CH to a substrate SB. As shown in FIG. 1 , the bonding head 310 of the bonding tool 300 carries the picked-up electronic component CH, accesses the substrate SB through the opening 113, and bonds the electronic component CH to the substrate SB. For example, if the bonding material BM is a eutectic alloy, the bonding head 310 has a pressurizing function for pressurizing the bonding material BM via the electronic component CH. The bonding head 310 holding the electronic component CH accesses the substrate SB through the opening 113.

[0024] The imaging unit 400 captures an image of the substrate SB or an electronic component CH bonded to the substrate SB. For example, the imaging unit 400 compares the bonding area of ​​the substrate SB with the camera field of view based on the captured image, and corrects the landing position of the bonding head 310. Also, for example, after mounting an electronic component CH on the substrate SB, the imaging unit 400 captures an image of the mounted substrate SB and electronic component CH, and corrects the landing position for the next bonding. Clearer captured images improve mounting accuracy and reduce the frequency of defective products being shipped. This improves bonding reliability.

[0025] The oxidation prevention passage 100 has an electrode 140 for converting the antioxidant gas into plasma, and heats the bonded members in an antioxidant plasma gas atmosphere. As shown in Figure 2, the oxidation prevention passage 100 has a furnace wall 110, a gas inlet 120, a mesh filter 130, the electrode 140, and an AC power source 150.

[0026] The furnace wall 110 is an outer wall for creating an anti-oxidizing plasma gas atmosphere inside the furnace wall 110 (hereinafter also referred to as "inside the furnace"), which is the space where bonding is performed. The furnace wall 110 is provided in a cylindrical shape along the transfer mechanism 20. As shown in FIG. 2, the furnace wall 110 has an entrance 111 and an exit 112.

[0027] The entrance 111 and the exit 112 are a pair of opening ends of a cylindrical furnace wall 110. The entrance 111 is the opening end of the furnace wall 110 on the negative side of the X-axis, and the exit 112 is the opening end of the furnace wall 110 on the positive side of the X-axis. A substrate SB to which electronic components CH are bonded enters the oxidation prevention path 100 through the entrance 111. The substrate SB with the bonded electronic components CH exits the oxidation prevention path 100 through the exit 112.

[0028] An antioxidant gas is introduced into the furnace through the gas inlet 120. Although not shown, the gas inlet 120 is provided with, for example, a flow meter and a flow rate adjusting valve.

[0029] As shown in FIGS. 1 and 2, the gas inlet 120 is connected to, for example, a wall on the negative Z-axis direction side of the furnace wall 110 (hereinafter referred to as the "top wall"). The gas inlet 120 is not limited to being connected to the ceiling wall. The gas inlet 120 may be connected to, for example, a wall on the Y-axis direction side of the furnace wall 110 (hereinafter referred to as the "side wall"), or may be connected to a wall on the positive Z-axis direction side of the furnace wall 110 (hereinafter referred to as the "bottom wall"). In the following, as an example, the gas inlet 120 will be described as being connected to the ceiling wall.

[0030] The mesh filter 130 generates a pressure loss in the antioxidant gas introduced from the gas inlet 120 to the inside of the furnace wall 110. As shown in Fig. 2, the area of ​​the mesh filter 130 is larger than the area of ​​the gas inlet 120. The mesh filter 130 is, for example, a metal mesh with an opening ratio of 25% to 40% and an opening diameter (openings) of 0.020 mm to 0.200 mm.

[0031] As long as the mesh filter 130 can generate a pressure loss in the antioxidant gas, the aperture ratio and aperture diameter of the mesh filter 130 are not limited to those described above. The material of the mesh filter 130 is preferably a metal with good heat resistance. As long as the material has sufficient heat resistance, the mesh filter 130 may be made of a flame-retardant fiber or ceramic. The mesh filter 130 has a main surface extending in the XY plane direction and has through-holes penetrating in the Z-axis direction.

[0032] 2, for example, gas inlet 120 is located at the center of mesh filter 130 in plan view. Mesh filter 130 has an area larger than that of gas inlet 120.

[0033] The antioxidant gas introduced into the furnace through the gas inlet 120 is prevented from flowing toward the bottom wall (positive Z-axis direction) due to pressure loss in the mesh filter 130, and passes through the mesh filter 130 while spreading in the XY plane. That is, the mesh filter 130 reduces the flow rate of the antioxidant gas per unit area, which causes turbulence, and also reduces fluctuations in the flow rate.

[0034] The electrode 140 is an electrode that converts the antioxidant gas that has passed through the mesh filter 130 into plasma. The electrode 140 is formed of a metal such as aluminum or stainless steel, and is generally made of a highly conductive material called a conductor.

[0035] The main surface of electrode 140 is provided parallel to and opposite to the main surface of mesh filter 130. Electrode 140 converts the antioxidant gas that has passed through mesh filter 130 into plasma, and fills space 101 in antioxidant path 100 through which substrate SB passes with the antioxidant plasma gas.

[0036] The structure of the electrode 140 will be described with reference to Figures 3, 4, and 5. Figure 3 is a cross-sectional view of the oxidation prevention path 100 according to one embodiment of the present invention. Figure 4 is a perspective view of the electrode 140. Figure 5 is a cross-sectional view of the electrode 140.

[0037] 3, electrode 140 is provided to face the surface of mesh filter 130 opposite to gas inlet 120 (the positive Z-axis side in FIG. 3). This allows the antioxidant gas to pass through electrode 140 uniformly by causing a pressure loss in the antioxidant gas due to mesh filter 130.

[0038] 3, the electrode 140 includes a first electrode 141 and a second electrode 142 provided on the opposite side of the first electrode 141 from the gas inlet 120. As shown in FIG. 3, the electrode 140 connects the peripheral edge of the first electrode 141 and the peripheral edge of the second electrode 142 with an insulator 144 so as to ensure a space 143 that separates the first electrode 141 and the second electrode 142.

[0039] Electrode 140 generates a dielectric barrier discharge between first electrode 141 and second electrode 142. In order to generate a dielectric barrier discharge, electrode 140 is configured such that the surface of first electrode 141 and the surface of second electrode 142 facing the surface of first electrode 141 face each other via dielectric 145. That is, electrode 140 is provided with dielectric 145 so that the metal portion of first electrode 141 and the metal portion of second electrode 142 do not directly face each other.

[0040] In the electrode 140, at least one of the surface of the first electrode 141 and the surface of the second electrode 142 is coated with a dielectric 145. It is preferable that the surface of the second electrode 142 is coated with the dielectric 145. This is because, taking into account the shape of the electrodes, it is easier to coat the surface of the second electrode 142 than to coat the surface of the first electrode 141.

[0041] Dielectric 145 is an insulator such as alumina, glass, or polyimide. The thickness of dielectric 145 is preferably 0.1 to 5 mm in order to generate a dielectric barrier discharge. This prevents arc discharge or streamer discharge from occurring between first electrode 141 and second electrode 142, and allows electrode 140 to generate a dielectric barrier discharge.

[0042] 3, the first electrode 141 is preferably provided so that the distance L2 between the first electrode 141 and the second electrode 142 is greater than the distance L1 between the first electrode 141 and the mesh filter 130. This is to avoid discharge between the mesh filter 130 and the first electrode 141 to which an AC voltage is applied.

[0043] The first electrode 141 is, for example, a flat plate, and has a through hole 141a and a protrusion 141b on the main surface as shown in FIG.

[0044] The passing holes 141a are holes through which the antioxidant gas that has passed through the mesh filter 130 passes to the second electrode 142. As shown in Fig. 4, the passing holes 141a are, for example, holes that penetrate the surface of the first electrode 141, and a plurality of the passing holes 141a are provided at equal intervals. The shape of the passing holes 141a is, for example, circular. Note that the shape of the passing holes 141a is not particularly limited and may be, for example, polygonal.

[0045] The protrusion 141b is a protrusion that extends toward the second electrode 142. As shown in Figures 4 and 5, the protrusion 141b is provided, for example, between two adjacent through holes 141a and has an acute-angled tip. The protrusion 141b is formed, for example, by cutting the through holes 141a into a flat plate having a plurality of through holes 141a with a ball end mill.

[0046] The second electrode 142 is, for example, a flat plate, and has through holes 142a in its main surface as shown in Fig. 4. The second electrode 142 is provided such that its main surface faces the main surface of the first electrode 141 in parallel.

[0047] The passage holes 142a are holes that allow the antioxidant plasma gas, which is obtained by converting the antioxidant gas into plasma in the space 143, to pass through the space 101 in the furnace where the substrate SB is placed. As shown in Figures 4 and 5, the passage holes 142a are, for example, holes that penetrate the surface of the second electrode 142, and a plurality of the passage holes 142a are provided at equal intervals.

[0048] 5, the through holes 142a are provided so as to correspond to the protrusions 141b when the first electrode 141 and the second electrode 142 are connected by the insulator 144. The shape of the through holes 142a is preferably circular, for example, and the second electrode 142 may be a punched metal having the through holes 142a at equal intervals.

[0049] In this way, when the shape of the passage hole 142a is circular, the distance between the tip of the protrusion 141b of the first electrode 141 and the edge of the passage hole 142a can be made uniform, thereby making it possible to suppress variations in the concentration of the antioxidant plasma gas. The shape of the passage hole 142a is not particularly limited, and may be, for example, polygonal.

[0050] The AC power supply 150 applies, for example, a low-frequency, high-voltage AC voltage between the first electrode 141 and the second electrode 142. The AC voltage is applied from the AC power supply 150 to at least one of the first electrode 141 and the second electrode 142. Here, it is preferable that the AC voltage is applied to the first electrode 141 and the second electrode 142 is grounded. This is because applying the AC voltage to the first electrode 141 that is farther away from the substrate SB can prevent the AC voltage from discharging to copper contained in the substrate SB.

[0051] Specifically, the AC power supply 150 may apply an AC voltage with a frequency of 20 KHz and a voltage of 10 kV. In this way, the bonding apparatus 10 can increase the electric field strength at the tip of the protrusion 141b of the first electrode 141 by applying a low-frequency, high-voltage AC voltage to the electrode 140. This allows the bonding apparatus 10 to appropriately generate a dielectric barrier discharge, thereby appropriately converting the antioxidant gas into plasma.

[0052] Furthermore, when the antioxidant gas is nitrogen, it is difficult to generate plasma because it does not have an intermediate energy level. However, applying a high voltage to nitrogen causes a transition, making it easier to generate plasma. Because plasma-generated nitrogen has a reducing effect, it can function as an antioxidant gas even if the antioxidant gas does not contain hydrogen. This makes it possible to obtain a reducing effect using an inexpensive antioxidant gas.

[0053] <<Generation process of anti-oxidation plasma gas atmosphere>> The process of generating an antioxidant plasma gas at the electrode 140 will be described with reference to Fig. 5. In Fig. 5, the flow of the antioxidant gas is indicated by dashed arrows, and the flow of the antioxidant plasma gas is indicated by solid arrows.

[0054] The bonding apparatus 10 introduces an antioxidant gas into the furnace from the gas inlet 120. The introduced antioxidant gas hits the mesh filter 130 and diffuses in the space 102 (see FIG. 3) between the mesh filter 130 and the ceiling wall.

[0055] The bonding apparatus 10 applies an AC voltage from an AC power supply 150 to the first electrode 141. As shown in FIG. 5, a high electric field intensity is generated between the tip of the protrusion 141b of the first electrode 141 and the edge of the passage hole 142a of the second electrode 142. This generates a dielectric barrier discharge near the tip of the protrusion 141b. The region in the space 143 where the dielectric barrier discharge is generated is called a "plasma region."

[0056] The mesh filter 130 allows the antioxidant gas to pass through to the opposite side of the gas inlet 120 (the positive Z-axis direction side) in response to an increase in internal pressure due to the antioxidant gas diffusing in the space 102.

[0057] The first electrode 141 introduces the antioxidant gas into the space 143 between the first electrode 141 and the second electrode 142 through the passage hole 141a.

[0058] The antioxidant gas introduced into the space 143 moves through the plasma generation region from the passage hole 141 a toward the passage hole 142 a of the second electrode 142 .

[0059] At this time, in the plasma generation region, the antioxidant gas is converted into plasma by the dielectric barrier discharge occurring near the tip of the protrusion 141b of the first electrode 141, and becomes an antioxidant plasma gas.

[0060] The anti-oxidation plasma gas passes through the passage holes 142a of the second electrode 142 and fills the space 101 inside the furnace. That is, the oxidizing gas in the anti-oxidation path 100 is replaced by the anti-oxidation plasma gas, and an anti-oxidation plasma gas atmosphere is created inside the anti-oxidation path 100. At this time, the oxidizing gas in the anti-oxidation path 100 is pushed out from the inlet 111, the outlet 112, and the opening 113 by the anti-oxidation plasma gas and released.

[0061] This allows the bonding apparatus 10 to enhance the anti-oxidation and reduction effects during bonding, thereby achieving highly reliable bonding.

[0062] <<Bonding method>> A bonding method in an anti-oxidant plasma gas atmosphere will be described with reference to Figures 6 and 7. Figure 6 is a flowchart of the operation of the bonding device. Figure 7 is a diagram showing the state during bonding processing.

[0063] The bonding apparatus 10 introduces an antioxidant gas into the furnace through the gas inlet 120 (S100).

[0064] The antioxidant gas passes through the mesh filter 130, causing a pressure loss, and reaches the electrode 140 (S101).

[0065] The electrode 140 generates plasma from the antioxidant gas by dielectric barrier discharge at the electrode 140, creating an antioxidant plasma gas atmosphere inside the furnace (S102).

[0066] In the bonding apparatus 10, the substrate SB is carried into a furnace containing an anti-oxidizing plasma gas atmosphere through the entrance 111 by the transport mechanism 200 (S103). Inside the furnace, the substrate SB is transported to below the opening 113 while being heated by the heater 210. When the substrate SB enters the furnace, it is surrounded by an external atmosphere of oxidizing gas, but the oxidizing gas is removed by the anti-oxidizing plasma gas emitted from the entrance 111.

[0067] The electronic component CH is picked up by the bonding head 310 and carried into the furnace through the opening 113 (S104). When the bonding head 310 and the electronic component CH enter the furnace, they are surrounded by an external atmosphere of oxidizing gas, but the oxidizing gas is removed by the anti-oxidizing plasma gas emitted from the opening 113.

[0068] Next, the electronic component CH is bonded to the substrate SB in a furnace with an anti-oxidant plasma gas atmosphere (S105).

[0069] The bonding head 310 bonds the electronic component CH to the substrate SB supported by the heater 210. The joining member BM is heated by the heater 210 and pressurized by the bonding head 310. When bonding of one electronic component CH is completed, the bonding head 310 releases the electronic component CH and exits the furnace through the opening 113.

[0070] Outside oxidizing gas is drawn into the space left by the bonding head 310 exiting the furnace through the opening 113. Such oxidizing gas is removed by the anti-oxidizing plasma gas (solid arrow in FIG. 7) emitted from the opening 113, and is also removed by a gas flow formed by a gas outlet (not shown) provided at the entrance of the opening 113.

[0071] Next, the substrate SB to which the electronic components CH are bonded is carried out of the furnace (S106).

[0072] The bonding of electronic components CH to the substrate SB by the bonding head 310 is repeated, and the substrate SB with a predetermined number of electronic components CH bonded thereto is carried out of the furnace by the transport mechanism 200 through the exit 112. The substrate SB that has been removed from above the heater 210 has its heat removed during transport, and by the time it leaves the exit 112, the temperature of the substrate SB has dropped to a temperature at which it will not oxidize.

[0073] Outside oxidizing gas is drawn into the space left by the substrate SB exiting the furnace through the exit port 112. Such oxidizing gas is removed by the anti-oxidizing plasma gas discharged from the exit port 112.

[0074] <<Modifications>> Although the oxidation prevention path 100 has been described above as including the mesh filter 130, this is not limiting and the mesh filter 130 may not be included. That is, the mesh filter 130 may be omitted if the electrode 140 can sufficiently reduce the pressure loss of the antioxidant gas introduced therein and suppress variations in the flow rate. In this way, even if the oxidation prevention path 100 does not include the mesh filter 130, the passage holes 141a of the first electrode 141 and the passage holes 142a of the second electrode 142 can still produce the effect of reducing the pressure loss of the antioxidant gas introduced into the furnace wall 110 from the gas inlet 120.

[0075] In the above, the electrode 140 has been described as being provided such that the second electrode 142 is provided on the opposite side of the gas inlet 120 (the positive Z-axis side) relative to the first electrode 141, but this is not limiting. The second electrode 142 may be provided on the gas inlet 120 side of the first electrode 141. In other words, there is no limit as to which of the first electrode 141 and the second electrode 142 is provided on the negative Z-axis side.

[0076] In the above description, the gas inlet 120 is described as being connected to the ceiling wall, but this is not limiting. The gas inlet 120 may also be connected to, for example, a side wall or a bottom wall. In this case, the mesh filter 130 and the electrode 140 are arranged so as to create a pressure loss in the antioxidant gas introduced into the furnace from the gas inlet 120. Specifically, for example, when the gas inlet 120 is connected to a side wall (a wall facing each other in the Y direction), the mesh filter 130 and the electrode 140 are arranged so that their main surfaces are aligned along the YZ plane.

[0077] <<Additional Notes>> Some or all of the embodiments of the present invention will be described below, but the present invention is not limited to the following descriptions.

[0078] [Appendix 1] a transport mechanism for transporting the substrate SB; a bonding tool for bonding an electronic component to the substrate; an oxidation prevention path extending along the transport mechanism and having a wall portion surrounding the transport mechanism; Equipped with The oxidation prevention path is an inlet for introducing the substrate; an opening that allows the bonding tool and the substrate to approach and separate from each other; a gas inlet for introducing an antioxidant gas into the inside of the wall portion; an electrode having a passage hole inside the wall portion through which the antioxidant gas passes, the electrode converting the antioxidant gas passing through the passage hole into plasma in a plasma-generating region; A bonding apparatus comprising:

[0079] According to this aspect, by generating and using an antioxidant plasma gas that is obtained by converting an antioxidant gas into plasma and that has stronger antioxidant and reducing effects than the antioxidant gas, it is possible to suppress the occurrence of bonding defects caused by oxidation of the substrate, etc., and improve bonding reliability. Furthermore, because converting the antioxidant gas into plasma makes it possible to enhance the antioxidant and reducing effects, it is possible to reduce the hydrogen content of the antioxidant gas, thereby reducing running costs.

[0080] [Appendix 2] The electrodes include a first electrode and a second electrode, at least one surface of which is coated with a dielectric; the first electrode has a plurality of first passage holes through which the antioxidant gas passes and a plurality of protrusions extending toward the second electrode; The second electrode is is disposed in parallel to and facing the first electrode, a second passage hole provided corresponding to the plurality of protrusions; A bonding apparatus according to [Appendix 1].

[0081] According to this aspect, it is possible to plasmatize the antioxidant gas using a simple structure, and by generating and using an antioxidant plasma gas that has a higher antioxidant and reduction effect than the antioxidant gas, it is possible to suppress the occurrence of bonding defects caused by oxidation of the substrate, etc., and improve the reliability of bonding.

[0082] [Appendix 3] the second passage holes of the second electrode are provided so as to overlap with the plurality of protrusions in a plan view, A bonding apparatus according to [Appendix 2].

[0083] According to this embodiment, a dielectric plasma discharge can be appropriately generated in the plasma generation region in the space 143 between the first electrode 141 and the second electrode 142, and therefore an appropriate anti-oxidation plasma gas atmosphere can be generated in the space 102. This makes it possible to suppress oxidation of the substrate SB and the occurrence of bonding defects due to oxidation.

[0084] [Appendix 4] The first electrode has a plurality of the first through holes provided at equal intervals. A bonding apparatus according to [Appendix 2] or [Appendix 3].

[0085] According to this embodiment, a dielectric plasma discharge can be applied uniformly to the oxidizing gas in the space 143 between the first electrode 141 and the second electrode 142, and therefore a uniform anti-oxidizing plasma gas atmosphere can be generated in the space 102. This makes it possible to suppress oxidation of the substrate SB and the occurrence of bonding defects due to oxidation.

[0086] [Appendix 5] The second electrode has a plurality of second through holes provided at equal intervals. A bonding apparatus according to any one of [Appendix 2] to [Appendix 4].

[0087] According to this embodiment, a dielectric plasma discharge can be applied uniformly to the oxidizing gas in the space 143 between the first electrode 141 and the second electrode 142, and therefore a uniform anti-oxidizing plasma gas atmosphere can be generated in the space 102. This makes it possible to suppress oxidation of the substrate SB and the occurrence of bonding defects due to oxidation.

[0088] [Appendix 6] a voltage is applied to the electrode of the first electrode and the second electrode that is provided near the gas inlet; the electrode of the first electrode and the second electrode that is provided farther from the gas inlet is electrically connected to ground; A bonding apparatus according to any one of [Appendix 2] to [Appendix 5].

[0089] According to this aspect, by moving the electrode to which the AC voltage is applied away from the substrate SB, it is possible to suppress dielectric breakdown due to dielectric barrier discharge to the substrate SB, thereby suppressing the occurrence of bonding defects due to dielectric breakdown.

[0090] [Appendix 7] At least a surface of the second electrode facing the second electrode is coated with the dielectric material. A bonding apparatus according to any one of [Appendix 1] to [Appendix 6].

[0091] According to this aspect, it is possible to coat the dielectric with a uniform thickness, which allows the dielectric barrier discharge to be appropriately generated, thereby appropriately generating the anti-oxidation plasma gas, thereby further suppressing the occurrence of oxidation and further improving the reliability of bonding.

[0092] [Appendix 8] a mesh filter provided on the inner side of the wall portion on the side of the gas inlet of the electrode, the mesh filter generating a pressure loss in the antioxidant gas introduced from the gas inlet into the inside of the furnace wall; A bonding apparatus according to any one of [Appendix 1] to [Appendix 7].

[0093] According to this embodiment, the antioxidant gas, which has experienced a pressure loss due to the mesh filter 130, is supplied toward the electrode 140. This limits the inflow rate of the antioxidant gas, suppressing the generation of turbulence and a drop in pressure inside the furnace wall, and preventing the entrainment of external air. Furthermore, since the antioxidant gas is supplied while diffusing toward the electrode 140, the variation in the flow rate per unit area of ​​the antioxidant gas is reduced, making it possible to uniformly apply a dielectric barrier discharge to the antioxidant gas in the space 143 of the electrode 140. This makes it possible to uniformly fill the space 101 of the antioxidant path 100 with the antioxidant plasma gas, thereby suppressing the occurrence of bonding defects due to oxidation of the substrate SB and improving bonding reliability.

[0094] [Appendix 9] a mesh filter provided on the side of the gas inlet of the electrode inside the wall portion, the mesh filter generating a pressure loss in the antioxidant gas introduced from the gas inlet into the inside of the furnace wall; A voltage is applied to the first electrode, the second electrode is electrically connected to ground; The first electrode is provided such that a second distance between the first electrode and the mesh filter is larger than a first distance between the first electrode and the second electrode. A bonding apparatus according to any one of [Appendix 2] to [Appendix 7].

[0095] According to this embodiment, the AC voltage applied to the first electrode 141 can prevent discharge between the first electrode 141 and the mesh filter 130, and can appropriately generate a dielectric barrier discharge in the space 143, thereby appropriately generating an anti-oxidation plasma gas. This can further suppress the occurrence of oxidation, thereby further improving the reliability of bonding.

[0096] [Appendix 10] the gas inlet introduces the antioxidant gas containing hydrogen into the inside of the wall portion; A bonding apparatus according to any one of [Appendix 1] to [Appendix 9].

[0097] According to this aspect, an antioxidant plasma gas obtained by plasmatizing an antioxidant gas with a high reducing effect is used, so that the occurrence of oxidation can be further suppressed, and the reliability of bonding can be further improved.

[0098] [Appendix 11] the bonding tool presses and heats the electronic component against the substrate to eutectic bond the electronic component and the substrate; A bonding apparatus according to any one of [Appendix 1] to [Appendix 9].

[0099] According to this aspect, in the case of bonding using eutectic alloys, which are prone to oxidizing substrates due to the high temperature bonding, it is particularly necessary to reduce the concentration of oxidizing gas inside the wall, making this embodiment more effective.

[0100] As described above, it is possible to provide a bonding apparatus that can improve the reliability of bonding.

[0101] The above-described embodiments are intended to facilitate understanding of the present invention and are not intended to limit the present invention. The elements of the embodiments, as well as their arrangement, materials, conditions, shapes, sizes, etc., are not limited to those illustrated and can be modified as appropriate. Furthermore, configurations shown in different embodiments can be partially substituted or combined with each other. [Explanation of symbols]

[0102] 10...Bonding equipment 100...Antioxidant 101…Space 102…Space 110...furnace wall 111...Entrance 112...Exit exit 113...Opening 120...Gas inlet 130...Mesh filter 140...electrode 141...first electrode 141a...passing hole 141b…Protrusion 142...second electrode 142a...passing hole 143…Space 144...Insulator 145...Dielectric 150…AC power supply 200...Transport mechanism 210...Heater 300...Bonding tool 310...Bonding head 400...imaging unit SB...Substrate CH…Electronic parts BM: Joint material

Claims

1. a transport mechanism for transporting the substrate; a bonding tool for bonding an electronic component to the substrate; an oxidation prevention path extending along the transport mechanism and having a wall portion surrounding the transport mechanism; Equipped with The oxidation prevention path is an inlet for introducing the substrate; an opening that allows the bonding tool and the substrate to approach and separate from each other; a gas inlet for introducing an antioxidant gas into the inside of the wall portion; an electrode having a passage hole inside the wall portion through which the antioxidant gas passes, the electrode converting the antioxidant gas passing through the passage hole into plasma in a plasma-generating region; A bonding apparatus comprising:

2. The electrodes include a first electrode and a second electrode, at least one surface of which is coated with a dielectric; the first electrode has a plurality of first passage holes through which the antioxidant gas passes and a plurality of protrusions extending toward the second electrode; The second electrode is is disposed in parallel to and facing the first electrode, a second passage hole provided corresponding to the plurality of protrusions; The bonding apparatus according to claim 1 .

3. the second passage holes of the second electrode are provided so as to overlap with the plurality of protrusions in a plan view, The bonding apparatus according to claim 2 .

4. the first electrode has a plurality of first passage holes provided at equal intervals; The bonding apparatus according to claim 2 .

5. the second electrode has a plurality of second passage holes provided at equal intervals; The bonding apparatus according to claim 2 .

6. a voltage is applied to the electrode of the first electrode and the second electrode that is provided near the gas inlet; the electrode of the first electrode and the second electrode that is provided farther from the gas inlet is electrically connected to ground; The bonding apparatus according to claim 2 .

7. At least a surface of the second electrode facing the first electrode is coated with the dielectric material. The bonding apparatus according to claim 2 .

8. a mesh filter provided on the gas inlet side of the electrode inside the wall portion, the mesh filter creating a pressure loss in the antioxidant gas introduced into the wall portion from the gas inlet. The bonding apparatus according to claim 1 .

9. a mesh filter provided on the gas inlet side of the electrode inside the wall portion, the mesh filter creating a pressure loss in the antioxidant gas introduced from the gas inlet into the wall portion; A voltage is applied to the first electrode, the second electrode is electrically connected to ground; The first electrode is provided such that a second distance between the first electrode and the mesh filter is larger than a first distance between the first electrode and the second electrode. The bonding apparatus according to claim 2 .

10. the gas inlet introduces the antioxidant gas containing hydrogen into the inside of the wall portion; The bonding apparatus according to any one of claims 1 to 9.

11. the bonding tool presses and heats the electronic component against the substrate to eutectic bond the electronic component and the substrate; The bonding apparatus according to any one of claims 1 to 9.

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